Powered by Deep Web Technologies
Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Voltage-Matched, Monolithic, Multi-Band-Gap Devices  

DOE Patents (OSTI)

Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a string of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

Wanlass, M. W.; Mascarenhas, A.

2006-08-22T23:59:59.000Z

2

Thermophotovoltaic conversion using selective infrared line emitters and large band gap photovoltaic devices  

DOE Patents (OSTI)

Efficient thermophotovoltaic conversion can be performed using photovoltaic devices with a band gap in the 0.75-1.4 electron volt range, and selective infrared emitters chosen from among the rare earth oxides which are thermally stimulated to emit infrared radiation whose energy very largely corresponds to the aforementioned band gap. It is possible to use thermovoltaic devices operating at relatively high temperatures, up to about 300.degree. C., without seriously impairing the efficiency of energy conversion.

Brandhorst, Jr., Henry W. (Auburn, AL); Chen, Zheng (Auburn, AL)

2000-01-01T23:59:59.000Z

3

P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same  

DOE Patents (OSTI)

An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

Guha, Subhendu (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1988-10-04T23:59:59.000Z

4

Multiple gap photovoltaic device  

DOE Patents (OSTI)

A multiple gap photovoltaic device having a transparent electrical contact adjacent a first cell which in turn is adjacent a second cell on an opaque electrical contact, includes utilizing an amorphous semiconductor as the first cell and a crystalline semiconductor as the second cell.

Dalal, Vikram L. (Newark, DE)

1981-01-01T23:59:59.000Z

5

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

NLE Websites -- All DOE Office Websites (Extended Search)

Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key characteristic of all semiconductors, an energy gap (band gap) in its electronic band structure. A multi-institutional collaboration under the leadership of researchers with Berkeley Lab and the University of California, Berkeley, have now demonstrated that growing an epitaxial film of graphene on a silicon carbide substrate results in a significant band gap, 0.26 electron volts (eV), an important step toward making graphene useful as a semiconductor.

6

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

NLE Websites -- All DOE Office Websites (Extended Search)

Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key characteristic of all semiconductors, an energy gap (band gap) in its electronic band structure. A multi-institutional collaboration under the leadership of researchers with Berkeley Lab and the University of California, Berkeley, have now demonstrated that growing an epitaxial film of graphene on a silicon carbide substrate results in a significant band gap, 0.26 electron volts (eV), an important step toward making graphene useful as a semiconductor.

7

Numericl modeling of graded band gap CIGS solar cells  

DOE Green Energy (OSTI)

The high efficiency reported recently by NREL for CIGS solar cells demonstrates the potential of band gap grading in producing high efficiency thin film solar cells. In order to reap the full benefits of this design strategy, a clear understanding of the fundamental device physics of these structures is needed. The purpose of this paper is to examine the role grading of the band gap plays in achieving high conversion efficiencies. To aid in this examination, a detailed numerical device simulation program, ADEPT, is used.

Gray, J.L.; Lee, Youn Jung

1994-12-31T23:59:59.000Z

8

Energy Band Gap Engineering of Graphene Nanoribbons  

E-Print Network (OSTI)

We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal electrodes and patterned into ribbons of varying widths and different crystallographic orientations. The temperature dependent conductance measurements show larger energy gaps opening for narrower ribbons. The sizes of these energy gaps are investigated by measuring the conductance in the non-linear response regime at low temperatures. We find that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.

Han, M Y

2007-01-01T23:59:59.000Z

9

Single-junction solar cells with the optimum band gap for terrestrial concentrator applications  

DOE Patents (OSTI)

A single-junction solar cell having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of "pinning" the optimum band gap for a wide range of operating conditions at a value of 1.14.+-.0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap.

Wanlass, Mark W. (Golden, CO)

1994-01-01T23:59:59.000Z

10

Fabrication of Photonic band gap Materials  

DOE Patents (OSTI)

A method for forming a periodic dielectric structure exhibiting photonic band gap effects includes forming a slurry of a nano-crystalline ceramic dielectric or semiconductor material and monodisperse polymer microsphere, depositing a film of the slurry on a substrate, drying the film, and calcining the film to remove the polymer microsphere there from. The film may be cold-pressed after drying and prior to calcining. The ceramic dielectric or semiconductor material may be titania, and the polymer microsphere may be polystyrenemicrosphere.

Constant, Kristen; Subramania, Ganapathi S.; Biswas, Rana; Ho, Kai-Ming

2000-01-05T23:59:59.000Z

11

Fabrication of photonic band gap materials  

DOE Patents (OSTI)

A method for forming a periodic dielectric structure exhibiting photonic band gap effects includes forming a slurry of a nano-crystalline ceramic dielectric or semiconductor material and monodisperse polymer microspheres, depositing a film of the slurry on a substrate, drying the film, and calcining the film to remove the polymer microspheres therefrom. The film may be cold-pressed after drying and prior to calcining. The ceramic dielectric or semiconductor material may be titania, and the polymer microspheres may be polystyrene microspheres.

Constant, Kristen (Ames, IA); Subramania, Ganapathi S. (Ames, IA); Biswas, Rana (Ames, IA); Ho, Kai-Ming (Ames, IA)

2002-01-15T23:59:59.000Z

12

Substrate-induced band gap opening in epitaxial graphene  

Science Conference Proceedings (OSTI)

Graphene has shown great application potential as the hostmaterial for next-generation electronic devices. However, despite itsintriguing properties, one of the biggest hurdles for graphene to beuseful as an electronic material is the lack of an energy gap in itselectronic spectra. This, for example, prevents the use of graphene inmaking transistors. Although several proposals have been made to open agap in graphene's electronic spectra, they all require complexengineering of the graphene layer. Here, we show that when graphene isepitaxially grown on SiC substrate, a gap of ~;0.26 eV is produced. Thisgap decreases as the sample thickness increases and eventually approacheszero when the number of layers exceeds four. We propose that the originof this gap is the breaking of sublattice symmetry owing to thegraphene-substrate interaction. We believe that our results highlight apromising direction for band gap engineering of graphene.

Zhou, S.Y.; Gweon, G.-H.; Fedorov, A.V.; First, P.N.; de Heer,W.A.; Lee, D.-H.; Guinea, F.; Castro Neto, A.H.; Lanzara, A.

2007-09-08T23:59:59.000Z

13

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

NLE Websites -- All DOE Office Websites (Extended Search)

Substrate-Induced Band-Gap Opening in Epitaxial Graphene Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Wednesday, 26 March 2008 00:00 Prospective challengers to...

14

Single-junction solar cells with the optimum band gap for terrestrial concentrator applications  

DOE Patents (OSTI)

A single-junction solar cell is described having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of ''pinning'' the optimum band gap for a wide range of operating conditions at a value of 1.14[+-]0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap. 7 figures.

Wanlass, M.W.

1994-12-27T23:59:59.000Z

15

In Situ Band Gap Engineering of Carbon Nanotubes  

VOLUME 79, NUMBER 11 PHYSICAL REVIEW LETTERS 15SEPTEMBER 1997 In Situ Band Gap Engineering of Carbon Nanotubes Vincent H. Crespi* and Marvin L. Cohen

16

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

NLE Websites -- All DOE Office Websites (Extended Search)

Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic...

17

Spark-gap device for precise switching  

DOE Patents (OSTI)

An improved spark gap apparatus is provided for precise switching of high currents from charged capacitors, and for protecting circuitry and circuit components, such as an energy storage capacitor, from overvoltage surges. The invention includes a pair of niobium electrodes with a melting point greater than 2000/sup 0/C that forms the spark gap. The electrodes are supported by conductive caps spaced apart from one another by an insulating member all of which form a hermetically sealed chamber filled with an inert, ionizable gas, preferably pure xenon. The spark gap device includes a quantity of solid radioactive stabilizer, carbon-14, placed within the hermetically sealed chamber adjacent to the spark gap. Methods for fabricating the device and its components are described. It is claimed that use of the Nb electrodes forestalls electrode erosion even under severe voltage and discharge conditions, that, by employing pure Xe gas, and solid carbon-14 radiation stabilizer, it is unnecessary to employ radioactive gases or chemically plated radioactive sources to promote ionization, and that, by selection of a suitable spark gap, a spark gap device is obtained which is capable of switching at 1700 V +- 10% for input voltage rates up to 570 V/ms and allowing peak discharge currents up to 3000 A from a 0.3 microfarad energy storage capacitor for more than 1000 operations. (LCL)

Boettcher, G.E.

1982-01-28T23:59:59.000Z

18

Spark gap device for precise switching  

DOE Patents (OSTI)

A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centrigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations.

Boettcher, Gordon E. (Albuquerque, NM)

1984-01-01T23:59:59.000Z

19

Spark gap device for precise switching  

DOE Patents (OSTI)

A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations. 3 figs.

Boettcher, G.E.

1984-10-02T23:59:59.000Z

20

Design of photonic crystals with multiple and combined band gaps  

E-Print Network (OSTI)

We present and use an algorithm based on convex conic optimization to design two-dimensional photonic crystals with large absolute band gaps. Among several illustrations we show that it is possible to design photonic ...

Men, H.

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Feasibility of band gap engineering of pyrite FeS?  

E-Print Network (OSTI)

We use first-principles computations to investigate whether the band gap of pyrite FeS? can be increased by alloying in order to make it a more effective photovoltaic material. In addition to the isostructural compounds ...

Sun, Ruoshi

22

DEPENDENCE OF BAND GAP ON DEPOSITION PARAMETERS IN CdSe SINTERED FILMS  

E-Print Network (OSTI)

II-VI semiconductors form an important class of opto-electronic materials. CdSe is a promising material for the fabrication of photovoltaic devices. Polycrystalline CdSe films have been deposited onto ultra clean glass substrates by sintering process. The optical band gap of these films was determined by reflectance measurements in wavelength range 400-850 nm. The band gap of these films was observed to increase with increase in sintering temperature and sintering time separately. The crystal structure and lattice parameter of these films were determined from x-ray diffractograms. The films were polycrystalline in nature having cubic zinc blende structure.

unknown authors

2008-01-01T23:59:59.000Z

23

The Development of Layered Photonic Band Gap Structures Using a Micro-Transfer Molding Technique  

SciTech Connect

Photonic band gap (PBG) crystals are periodic dielectric structures that manipulate electromagnetic radiation in a manner similar to semiconductor devices manipulating electrons. Whereas a semiconductor material exhibits an electronic band gap in which electrons cannot exist, similarly, a photonic crystal containing a photonic band gap does not allow the propagation of specific frequencies of electromagnetic radiation. This phenomenon results from the destructive Bragg diffraction interference that a wave propagating at a specific frequency will experience because of the periodic change in dielectric permitivity. This gives rise to a variety of optical applications for improving the efficiency and effectiveness of opto-electronic devices. These applications are reviewed later. Several methods are currently used to fabricate photonic crystals, which are also discussed in detail. This research involves a layer-by-layer micro-transfer molding ({mu}TM) and stacking method to create three-dimensional FCC structures of epoxy or titania. The structures, once reduced significantly in size can be infiltrated with an organic gain media and stacked on a semiconductor to improve the efficiency of an electronically pumped light-emitting diode. Photonic band gap structures have been proven to effectively create a band gap for certain frequencies of electro-magnetic radiation in the microwave and near-infrared ranges. The objective of this research project was originally two-fold: to fabricate a three dimensional (3-D) structure of a size scaled to prohibit electromagnetic propagation within the visible wavelength range, and then to characterize that structure using laser dye emission spectra. As a master mold has not yet been developed for the micro transfer molding technique in the visible range, the research was limited to scaling down the length scale as much as possible with the current available technology and characterizing these structures with other methods.

Kevin Jerome Sutherland

2001-05-01T23:59:59.000Z

24

Implications of mercury interactions with band-gap semiconductor oxides  

SciTech Connect

Titanium dioxide is a well-known photooxidation catalyst. It will oxidize mercury in the presence of ultraviolet light from the sun and oxygen and/or moisture to form mercuric oxide. Several companies manufacture self-cleaning windows. These windows have a transparent coating of titanium dioxide. The titanium dioxide is capable of destroying organic contaminants in air in the presence of ultraviolet light from the sun, thereby keeping the windows clean. The commercially available self-cleaning windows were used to sequester mercury from oxygen–nitrogen mixtures. Samples of the self-cleaning glass were placed into specially designed photo-reactors in order to study the removal of elemental mercury from oxygen–nitrogen mixtures resembling air. The possibility of removing mercury from ambient air with a self-cleaning glass apparatus is examined. The intensity of 365-nm ultraviolet light was similar to the natural intensity from sunlight in the Pittsburgh region. Passive removal of mercury from the air may represent an option in lieu of, or in addition to, point source clean-up at combustion facilities. There are several common band-gap semiconductor oxide photocatalysts. Sunlight (both the ultraviolet and visible light components) and band-gap semiconductor particles may have a small impact on the global cycle of mercury in the environment. The potential environmental consequences of mercury interactions with band-gap semiconductor oxides are discussed. Heterogeneous photooxidation might impact the global transport of elemental mercury emanating from flue gases.

Granite, E.J.; King, W.P.; Stanko, D.C.; Pennline, H.W.

2008-09-01T23:59:59.000Z

25

Single-junction solar cells with the optimum band gap for ...  

A single-junction solar cell having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown ...

26

Utility-Scale Solar Power Converter: Agile Direct Grid Connect Medium Voltage 4.7-13.8 kV Power Converter for PV Applications Utilizing Wide Band Gap Devices  

SciTech Connect

Solar ADEPT Project: Satcon is developing a compact, lightweight power conversion device that is capable of taking utility-scale solar power and outputting it directly into the electric utility grid at distribution voltage levels—eliminating the need for large transformers. Transformers “step up” the voltage of the power that is generated by a solar power system so it can be efficiently transported through transmission lines and eventually “stepped down” to usable voltages before it enters homes and businesses. Power companies step up the voltage because less electricity is lost along transmission lines when the voltage is high and current is low. Satcon’s new power conversion devices will eliminate these heavy transformers and connect a utility-scale solar power system directly to the grid. Satcon’s modular devices are designed to ensure reliability—if one device fails it can be bypassed and the system can continue to run.

None

2012-01-25T23:59:59.000Z

27

A new gap separation mechanism for APS insertion devices.  

SciTech Connect

A new gap separation mechanism for use with the standard Advanced Photon Source (APS) 3.3-cm-period undulator magnetic structures has been designed and built and the first system has been installed in the APS storage ring. The system allows a minimum magnetic gap of 10 mm for use with the APS 8-mm insertion device vacuum chambers. The mechanism is a bolted steel frame structure with a simple 4-motor mechanical drive train. The control system uses servomotors with incremental rotary encoders and virtual absolute linear encoders.

Trakhtenberg, E. M.; Tcheskidov, V.; Den Hartog, P. K.; Deriy, B.; Erdmann, M.; Makarov, O.; Moog, E. R.

1999-10-25T23:59:59.000Z

28

A New Gap-Opening Mechanism in a Triple-Band Metal  

NLE Websites -- All DOE Office Websites (Extended Search)

A New Gap-Opening Mechanism in a A New Gap-Opening Mechanism in a Triple-Band Metal A New Gap-Opening Mechanism in a Triple-Band Metal Print Wednesday, 23 February 2005 00:00 A "wire" of indium only one or a few atoms wide grown on a silicon surface comprises an ideal test laboratory for studying one-dimensional (1D) metals. A new example comes from a collaboration between researchers from Yonsei University in Korea, the ALS, and the University of Oregon, who have discovered that the phase transition from metal to insulator that occurs at low temperature in indium wires on the silicon (111) surface involves not only the expected shift in the electronic structure (band-gap opening) but also a band restructuring that gives rise to an energy gap in a second band. Three's a Crowd

29

Tuning Band Gap Energies in Pb3(C6X6) Extended Solid-State Structures  

SciTech Connect

A detailed plane-wave density functional theory investigation of the solid-state properties of the extended organometallic system Pb{sub 3}C{sub 6}X{sub 6} for X = O, S, Se, and Te has been performed. Initial geometry parameters for the Pb-X and C-X bond distances were obtained from optimized calculations on molecular fragment models. The Pb{sub 3}C{sub 6}X{sub 6} extended solid molecular structures were constructed in the space group P6/mmm on the basis of the known structure for X = S. Ground-state geometries, band gap energies, densities of states, and charge densities were calculated with the PBE-generalized gradient exchange-correlation functional and the HSE06 hybrid exchange-correlation functional. The PBE band gap energies were found to be lower than the HSE06 values by >0.7 eV. The band energies at points of high symmetry along the first Brillouin zone in the crystal were larger than the overall band gap of the system. Pb{sub 3}C{sub 6}O{sub 6} was predicted to be a direct semiconductor ({Lambda} point) with a PBE band gap of 0.28 eV and an HSE06 band gap of 1.06 eV. Pb{sub 3}C{sub 6}S{sub 6} and Pb{sub 3}C{sub 6}Se{sub 6} were predicted to have indirect band gaps. The PBE band gap for Pb{sub 3}C{sub 6}S{sub 6} was 0.98 eV, and the HSE06 band gap was 1.91 eV. The HSE06 value is in good agreement with the experimentally observed band gap of 1.7 eV. Pb{sub 3}C{sub 6}Se{sub 6} has a PBE band gap of 0.56 eV and a HSE06 band gap of 1.41 eV. Pb{sub 3}C{sub 6}Te{sub 6} was predicted to be metallic with both of the PBE and HSE06 functionals. A detailed analysis of the PBE band structure and partial density of states at two points before and after the metallic behavior reveals a change in orbital character indicative of band crossing in Pb{sub 3}C{sub 6}Te{sub 6}. These results show that the band gap energies can be fine-tuned by changing the substituent X atom.

Stott, Amanda C.; Vaid, Thomas P.; Bylaska, Eric J.; Dixon, David A.

2012-04-19T23:59:59.000Z

30

X-Band Photonic Band-Gap Accelerator Structure Breakdown Experiment  

SciTech Connect

In order to understand the performance of photonic band-gap (PBG) structures under realistic high gradient, high power, high repetition rate operation, a PBG accelerator structure was designed and tested at X band (11.424 GHz). The structure consisted of a single test cell with matching cells before and after the structure. The design followed principles previously established in testing a series of conventional pillbox structures. The PBG structure was tested at an accelerating gradient of 65 MV/m yielding a breakdown rate of two breakdowns per hour at 60 Hz. An accelerating gradient above 110 MV/m was demonstrated at a higher breakdown rate. Significant pulsed heating occurred on the surface of the inner rods of the PBG structure, with a temperature rise of 85 K estimated when operating in 100 ns pulses at a gradient of 100 MV/m and a surface magnetic field of 890 kA/m. A temperature rise of up to 250 K was estimated for some shots. The iris surfaces, the location of peak electric field, surprisingly had no damage, but the inner rods, the location of the peak magnetic fields and a large temperature rise, had significant damage. Breakdown in accelerator structures is generally understood in terms of electric field effects. These PBG structure results highlight the unexpected role of magnetic fields in breakdown. The hypothesis is presented that the moderate level electric field on the inner rods, about 14 MV/m, is enhanced at small tips and projections caused by pulsed heating, leading to breakdown. Future PBG structures should be built to minimize pulsed surface heating and temperature rise.

Marsh, Roark A.; /MIT /MIT /NIFS, Gifu /JAERI, Kyoto /LLNL, Livermore; Shapiro, Michael A.; Temkin, Richard J.; /MIT; Dolgashev, Valery A.; Laurent, Lisa L.; Lewandowski, James R.; Yeremian, A.Dian; Tantawi, Sami G.; /SLAC

2012-06-11T23:59:59.000Z

31

Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN  

SciTech Connect

The issue of ambiguous values of the band gap (0.6 to 2 eV) of InN thin film in literature has been addressed by a careful experiment. We have grown wurtzite InN films by PA-MBE simultaneously on differently modified c-plane sapphire substrates and characterized by complementary structural and chemical probes. Our studies discount Mie resonances caused by metallic In segregation at grain boundaries as the reason for low band gap values ( Almost-Equal-To 0.6 eV) and also the formation of Indium oxides and oxynitrides as the cause for high band gap value ( Almost-Equal-To 2.0 eV). It is observed that polycrystallinity arising from azimuthal miss-orientation of c-oriented wurtzite InN crystals increases the carrier concentration and the band gap values. We have reviewed the band gap, carrier concentration, and effective mass of InN in literature and our own measurements, which show that the Moss-Burstein relation with a non-parabolic conduction band accounts for the observed variation of band gap with carrier concentration.

Kuyyalil, Jithesh [FOTON, UMR 6082, INSA, F-35708 Rennes (France); Tangi, Malleswararao; Shivaprasad, S. M. [Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore-560064 (India)

2012-10-15T23:59:59.000Z

32

Characterization of Novel Semiconductor Alloys for Band Gap Engineering  

E-Print Network (OSTI)

parameter for the lower-energy matrix like band. The fullthe optical matrix is constant with energy and given by: 2 menergy of the host semiconductor. Diagalization of the matrix

Broesler, Robert Joseph

2010-01-01T23:59:59.000Z

33

Calculation of wakefields in a 17 GHz beam-driven photonic band-gap accelerator structure  

E-Print Network (OSTI)

We present the theoretical analysis and computer simulation of the wakefields in a 17 GHz photonic band-gap (PBG) structure for accelerator applications. Using the commercial code CST Particle Studio, the fundamental ...

Hu, Min

34

Band gap tuning and optical absorption in type-II InAs/GaSb mid infrared short period superlattices: 14 bands K Dot-Operator p study  

Science Conference Proceedings (OSTI)

The MBE growth of short-period InAs/GaSb type-II superlattice structures, varied around 20.5 A InAs/24 A GaSb were [J. Applied physics, 96, 2580 (2004)] carried out by Haugan et al. These SLs were designed to produce devices with an optimum mid-infrared photoresponse and a sharpest photoresponse cutoff. We have used a realistic and reliable 14-band k.p formalism description of the superlattice electronic band structure to calculate the absorption coefficient in such short-period InAs/GaSb type-II superlattices. The parameters for this formalism are known from fitting to independent experiments for the bulk materials. The band-gap energies are obtained without any fitting parameters, and are in good agreement with experimental data.

AbuEl-Rub, Khaled M. [Department of Applied Physical Sciences, Jordan University of Science and Technology Irbid, 21141 (Jordan)

2012-09-06T23:59:59.000Z

35

On the Relation between Perfect Tunneling and Band Gaps for SNG Metamaterial Structures  

E-Print Network (OSTI)

In this article we have proposed a compact classification of isotropic and homogenous single negative (SNG) electromagnetic metamaterial based perfect tunneling unit cells. This has been made by means of the band gap theories and properties of the arrays made up of these unit cells. Based on their reported characteristics, we have proposed new structures that simultaneously show perfect tunneling band and complete band gap (CBG - omni directional stop band for both polarizations). Besides, we have identified perfect tunneling which can be considered as "phase shifted perfect tunneling". Several interesting and new phenomena like Complete Perfect Tunneling (CPT - omni-directional perfect tunneling for both polarizations), Band Gap Shifting, CBG in Double Positive (DPS) material range, etc. have been reported with proper physical and mathematical explanations.

Mahdy, M R C; Shawon, Jubayer; Al-Quaderi, Golam Dastegir; Matin, M A

2013-01-01T23:59:59.000Z

36

A New Gap-Opening Mechanism in a Triple-Band Metal  

NLE Websites -- All DOE Office Websites (Extended Search)

A New Gap-Opening Mechanism in a Triple-Band Metal Print A New Gap-Opening Mechanism in a Triple-Band Metal Print A "wire" of indium only one or a few atoms wide grown on a silicon surface comprises an ideal test laboratory for studying one-dimensional (1D) metals. A new example comes from a collaboration between researchers from Yonsei University in Korea, the ALS, and the University of Oregon, who have discovered that the phase transition from metal to insulator that occurs at low temperature in indium wires on the silicon (111) surface involves not only the expected shift in the electronic structure (band-gap opening) but also a band restructuring that gives rise to an energy gap in a second band. Three's a Crowd For the condensed-matter physicist, the words "electronic structure" are what it's all about. Short-hand for a description of the way electrons behave in solids, liquids, molecules, and even atoms, electronic structure underlies almost all of the everyday properties of matter from structural strength to electrical conductivity. For example, metals conduct electricity because some of their electrons have access to a continuous band of energies, whereas a break or gap in the band turns the metal into an insulator.

37

A New Gap-Opening Mechanism in a Triple-Band Metal  

NLE Websites -- All DOE Office Websites (Extended Search)

A New Gap-Opening Mechanism in a Triple-Band Metal Print A New Gap-Opening Mechanism in a Triple-Band Metal Print A "wire" of indium only one or a few atoms wide grown on a silicon surface comprises an ideal test laboratory for studying one-dimensional (1D) metals. A new example comes from a collaboration between researchers from Yonsei University in Korea, the ALS, and the University of Oregon, who have discovered that the phase transition from metal to insulator that occurs at low temperature in indium wires on the silicon (111) surface involves not only the expected shift in the electronic structure (band-gap opening) but also a band restructuring that gives rise to an energy gap in a second band. Three's a Crowd For the condensed-matter physicist, the words "electronic structure" are what it's all about. Short-hand for a description of the way electrons behave in solids, liquids, molecules, and even atoms, electronic structure underlies almost all of the everyday properties of matter from structural strength to electrical conductivity. For example, metals conduct electricity because some of their electrons have access to a continuous band of energies, whereas a break or gap in the band turns the metal into an insulator.

38

A New Gap-Opening Mechanism in a Triple-Band Metal  

NLE Websites -- All DOE Office Websites (Extended Search)

A New Gap-Opening Mechanism in a Triple-Band Metal Print A New Gap-Opening Mechanism in a Triple-Band Metal Print A "wire" of indium only one or a few atoms wide grown on a silicon surface comprises an ideal test laboratory for studying one-dimensional (1D) metals. A new example comes from a collaboration between researchers from Yonsei University in Korea, the ALS, and the University of Oregon, who have discovered that the phase transition from metal to insulator that occurs at low temperature in indium wires on the silicon (111) surface involves not only the expected shift in the electronic structure (band-gap opening) but also a band restructuring that gives rise to an energy gap in a second band. Three's a Crowd For the condensed-matter physicist, the words "electronic structure" are what it's all about. Short-hand for a description of the way electrons behave in solids, liquids, molecules, and even atoms, electronic structure underlies almost all of the everyday properties of matter from structural strength to electrical conductivity. For example, metals conduct electricity because some of their electrons have access to a continuous band of energies, whereas a break or gap in the band turns the metal into an insulator.

39

High power breakdown testing of a photonic band-gap accelerator structure with elliptical rods  

E-Print Network (OSTI)

An improved single-cell photonic band-gap (PBG) structure with an inner row of elliptical rods (PBG-E) was tested with high power at a 60 Hz repetition rate at X-band (11.424 GHz), achieving a gradient of 128??MV/m at a ...

Munroe, Brian James

40

Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge  

DOE Patents (OSTI)

A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

Olson, Jerry M. (Lakewood, CO); Kurtz, Sarah R. (Golden, CO); Friedman, Daniel J. (Lakewood, CO)

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Band-gap measurements of direct and indirect semiconductors using monochromated electrons  

Science Conference Proceedings (OSTI)

With the development of monochromators for transmission electron microscopes, valence electron-energy-loss spectroscopy (VEELS) has become a powerful technique to study the band structure of materials with high spatial resolution. However, artifacts such as Cerenkov radiation pose a limit for interpretation of the low-loss spectra. In order to reveal the exact band-gap onset using the VEELS method, semiconductors with direct and indirect band-gap transitions have to be treated differently. For direct semiconductors, spectra acquired at thin regions can efficiently minimize the Cerenkov effects. Examples of hexagonal GaN (h-GaN) spectra acquired at different thickness showed that a correct band-gap onset value can be obtained for sample thicknesses up to 0.5 t/{lambda}. In addition, {omega}-q maps acquired at different specimen thicknesses confirm the thickness dependency of Cerenkov losses. For indirect semiconductors, the correct band-gap onset can be obtained in the dark-field mode when the required momentum transfer for indirect transition is satisfied. Dark-field VEEL spectroscopy using a star-shaped entrance aperture provides a way of removing Cerenkov effects in diffraction mode. Examples of Si spectra acquired by displacing the objective aperture revealed the exact indirect transition gap E{sub g} of 1.1 eV.

Gu Lin; Srot, Vesna; Sigle, Wilfried; Koch, Christoph; Aken, Peter van; Ruehle, Manfred [Max-Planck Institute for Metals Research, Heisenbergstrasse 3, D-70569 Stuttgart (Germany); Scholz, Ferdinand; Thapa, Sarad B.; Kirchner, Christoph [Institute of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, D-89069 Ulm (Germany); Jetter, Michael [Institut fuer Strahlenphysik, University of Stuttgart, D-70569 Stuttgart (Germany)

2007-05-15T23:59:59.000Z

42

Method of manufacturing flexible metallic photonic band gap structures, and structures resulting therefrom  

DOE Patents (OSTI)

A method of manufacturing a flexible metallic photonic band gap structure operable in the infrared region, comprises the steps of spinning on a first layer of dielectric on a GaAs substrate, imidizing this first layer of dielectric, forming a first metal pattern on this first layer of dielectric, spinning on and imidizing a second layer of dielectric, and then removing the GaAs substrate. This method results in a flexible metallic photonic band gap structure operable with various filter characteristics in the infrared region. This method may be used to construct multi-layer flexible metallic photonic band gap structures. Metal grid defects and dielectric separation layer thicknesses are adjusted to control filter parameters.

Gupta, Sandhya (Bloomington, MN); Tuttle, Gary L. (Ames, IA); Sigalas, Mihail (Ames, IA); McCalmont, Jonathan S. (Ames, IA); Ho, Kai-Ming (Ames, IA)

2001-08-14T23:59:59.000Z

43

Gallium arsenide-based ternary compounds and multi-band-gap solar cell research  

DOE Green Energy (OSTI)

Aim of this contract is the achievement of a high-efficiency, low-cost solar cell. The basic approach to the problem is centered upon the heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The growth technique employed is metalorganic chemical vapor deposition. The silicon wafer may serve as a mechanical substrate and ohmic contact for a single-junction device, or may contain a p-n junction of its own and form the bottom cell of a two junction tandem solar cell structure. The III-V material for the single-junction case is GaAs and for the two-junction case is either GaAlAs or GaAsP, either material having the proper composition to yield a band gap of approximately 1.7 eV. Results achieved in this contract include the following: (1) a 17.6% efficient GaAs-on-Si solar cell; (2) an 18.5% efficient GaAs-on-Si concentrator solar cell at 400 suns; (3) a 24.8% efficient GaAs-on-GaAs solar cell; (4) a 28.7% efficient GaAs-on-GaAs concentrator solar cell at 200 suns; (5) measurement of the effects of dislocation density and emitter doping on GaAs cells; and (6) improvements in the growth process to achieve reproducible thin AlGaAs window layers with low recombination velocities and environmental stability.

Vernon, S. (Spire Corp., Bedford, MA (United States))

1993-02-01T23:59:59.000Z

44

Furan Substituted Diketopyrrolopyrrole and Thienylenevinylene Based Low Band Gap Copolymer for High Mobility Organic Thin Film Transistors  

Science Conference Proceedings (OSTI)

A novel solution processable donor-acceptor (D-A) based low band gap polymer semiconductor poly{l_brace}3,6-difuran-2-yl-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-thienylenevinylene{r_brace} (PDPPF-TVT), was designed and synthesized by a Pd-catalyzed Stille coupling route. An electron deficient furan based diketopyrrolopyrrole (DPP) block and electron rich thienylenevinylene (TVT) donor moiety were attached alternately in the polymer backbone. The polymer exhibited good solubility, film forming ability and thermal stability. The polymer exhibits wide absorption bands from 400 nm to 950 nm (UV-vis-NIR region) with absorption maximum centered at 782 nm in thin film. The optical band gap (E{sub g}{sup opt}) calculated from the polymer film absorption onset is around 1.37 eV. The {pi}-energy band level (ionization potential) calculated by photoelectron spectroscopy in air (PESA) for PDPPF-TVT is around 5.22 eV. AFM and TEM analyses of the polymer reveal nodular terrace morphology with optimized crystallinity after 200 C thermal annealing. This polymer exhibits p-channel charge transport characteristics when used as the active semiconductor in organic thin-film transistor (OTFT) devices. The highest hole mobility of 0.13 cm{sup 2} V{sup -1} s{sup -1} is achieved in bottom gate and top-contact OTFT devices with on/off ratios in the range of 10{sup 6}-10{sup 7}. This work reveals that the replacement of thiophene by furan in DPP copolymers exhibits such a high mobility, which makes DPP furan a promising block for making a wide range of promising polymer semiconductors for broad applications in organic electronics.

Sonar, Prashant [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research; Zhuo, Jing-Mei [Department of Physics, National University of Singapore; Zhao, Li-Hong [National University of Singapore; Lim, Kai-Ming [Department of Physics, National University of Singapore; Chen, Jihua [ORNL; Rondinone, Adam Justin [ORNL; Singh, Samarendra [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research; Chua, Lay-Lay [National University of Singapore; Ho, Peter [National University of Singapore; Dodabalapur, Ananth [National University of Singapore

2012-01-01T23:59:59.000Z

45

Toroidal band limiter for a plasma containment device  

DOE Patents (OSTI)

This invention relates to a toroidal plasma confinement device having poloidal and toroidal magnetic fields for confining a toroidal plasma column with a plasma current induced therein along an endless, circular equilibrium axis in a torus vacuum cavity wherein the improvement comprises the use of a toroidal plasma band limiter mounted within the vacuum cavity in such a manner as to ensure that the plasma energy is distributed more uniformly over the limiter surface thereby avoiding intense local heating of the limiter while at the same time substantially preventing damage to the plasma containment wall of the cavity by the energetic particles diffusing out from the confined plasma. A plurality of poloidal plasma ring limiters are also utilized for containment wall protection during any disruptive instability that might occur during operation of the device.

Kelley, George G. (Kingston, TN)

1978-01-01T23:59:59.000Z

46

Periodic dielectric structure for production of photonic band gap and method for fabricating the same  

DOE Patents (OSTI)

A method is disclosed for fabricating a periodic dielectric structure which exhibits a photonic band gap. Alignment holes are formed in a wafer of dielectric material having a given crystal orientation. A planar layer of elongate rods is then formed in a section of the wafer. The formation of the rods includes the step of selectively removing the dielectric material of the wafer between the rods. The formation of alignment holes and layers of elongate rods and wafers is then repeated to form a plurality of patterned wafers. A stack of patterned wafers is then formed by rotating each successive wafer with respect to the next-previous wafer, and then placing the successive wafer on the stack. This stacking results in a stack of patterned wafers having a four-layer periodicity exhibiting a photonic band gap. 42 figures.

Ozbay, E.; Tuttle, G.; Michel, E.; Ho, K.M.; Biswas, R.; Chan, C.T.; Soukoulis, C.

1995-04-11T23:59:59.000Z

47

Fabrication of Ceramic Layer-by-Layer Infrared Wavelength Photonic Band Gap Crystals  

SciTech Connect

Photonic band gap (PBG) crystals, also known as photonic crystals, are periodic dielectric structures which form a photonic band gap that prohibit the propagation of electromagnetic (EM) waves of certain frequencies at any incident angles. Photonic crystals have several potential applications including zero-threshold semiconductor lasers, the inhibition of spontaneous emission, dielectric mirrors, and wavelength filters. If defect states are introduced in the crystals, light can be guided from one location to another or even a sharp bending of light in micron scale can be achieved. This generates the potential for optical waveguide and optical circuits, which will contribute to the improvement in the fiber-optic communications and the development of high-speed computers.

Henry Hao-Chuan Kang

2004-12-19T23:59:59.000Z

48

Periodic dielectric structure for production of photonic band gap and method for fabricating the same  

DOE Patents (OSTI)

A method for fabricating a periodic dielectric structure which exhibits a photonic band gap. Alignment holes are formed in a wafer of dielectric material having a given crystal orientation. A planar layer of elongate rods is then formed in a section of the wafer. The formation of the rods includes the step of selectively removing the dielectric material of the wafer between the rods. The formation of alignment holes and layers of elongate rods and wafers is then repeated to form a plurality of patterned wafers. A stack of patterned wafers is then formed by rotating each successive wafer with respect to the next-previous wafer, and then placing the successive wafer on the stack. This stacking results in a stack of patterned wafers having a four-layer periodicity exhibiting a photonic band gap.

Ozbay, Ekmel (Ames, IA); Tuttle, Gary (Ames, IA); Michel, Erick (Ames, IA); Ho, Kai-Ming (Ames, IA); Biswas, Rana (Ames, IA); Chan, Che-Ting (Ames, IA); Soukoulis, Costas (Ames, IA)

1995-01-01T23:59:59.000Z

49

Photonic band gaps in one-dimensional magnetized plasma photonic crystals with arbitrary magnetic declination  

Science Conference Proceedings (OSTI)

In this paper, the properties of photonic band gaps and dispersion relations of one-dimensional magnetized plasma photonic crystals composed of dielectric and magnetized plasma layers with arbitrary magnetic declination are theoretically investigated for TM polarized wave based on transfer matrix method. As TM wave propagates in one-dimensional magnetized plasma photonic crystals, the electromagnetic wave can be divided into two modes due to the influence of Lorentz force. The equations for effective dielectric functions of such two modes are theoretically deduced, and the transfer matrix equation and dispersion relations for TM wave are calculated. The influences of relative dielectric constant, plasma collision frequency, incidence angle, plasma filling factor, the angle between external magnetic field and +z axis, external magnetic field and plasma frequency on transmission, and dispersion relation are investigated, respectively, and some corresponding physical explanations are also given. From the numerical results, it has been shown that plasma collision frequency cannot change the locations of photonic band gaps for both modes, and also does not affect the reflection and transmission magnitudes. The characteristics of photonic band gaps for both modes can be obviously tuned by relative dielectric constant, incidence angle, plasma filling factor, the angle between external magnetic field and +z axis, external magnetic field and plasma frequency, respectively. These results would provide theoretical instructions for designing filters, microcavities, and fibers, etc.

Zhang Haifeng [College of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Nanjing Artillery Academy, Nanjing 211132 (China); Liu Shaobin [College of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); State Key Laboratory of Millimeter Waves of Southeast University, Nanjing Jiangsu 210096 (China); Kong Xiangkun [College of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

2012-12-15T23:59:59.000Z

50

High efficiency thin-film multiple-gap photovoltaic device  

SciTech Connect

A photovoltaic device includes at least two solar cells made from Group IV elements or their alloys in the amorphous state mounted on a substrate. The outermost or first cell has a larger bandgap than the second cell. Various techniques are utilized to improve the efficiency of the device.

Dalal, Vikram L. (Newark, DE)

1983-01-01T23:59:59.000Z

51

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure  

SciTech Connect

The compositional dependence of effective tunneling barrier height (E{sub beff}) and defect assisted band alignment transition from staggered gap to broken gap in GaAsSb/InGaAs n-channel tunnel field effect transistor (TFET) structures were demonstrated by x-ray photoelectron spectroscopy (XPS). High-resolution x-ray diffraction measurements revealed that the active layers are internally lattice matched. The evolution of defect properties was evaluated using cross-sectional transmission electron microscopy. The defect density at the source/channel heterointerface was controlled by changing the interface properties during growth. By increasing indium (In) and antimony (Sb) alloy compositions from 65% to 70% in In{sub x}Ga{sub 1-x}As and 60% to 65% in GaAs{sub 1-y}Sb{sub y} layers, the E{sub beff} was reduced from 0.30 eV to 0.21 eV, respectively, with the low defect density at the source/channel heterointerface. The transfer characteristics of the fabricated TFET device with an E{sub beff} of 0.21 eV show 2 Multiplication-Sign improvement in ON-state current compared to the device with E{sub beff} of 0.30 eV. On contrary, the value of E{sub beff} was decreased from 0.21 eV to -0.03 eV due to the presence of high defect density at the GaAs{sub 0.35}Sb{sub 0.65}/In{sub 0.7}Ga{sub 0.3}As heterointerface. As a result, the band alignment was converted from staggered gap to broken gap, which leads to 4 orders of magnitude increase in OFF-state leakage current. Therefore, a high quality source/channel interface with a properly selected E{sub beff} and well maintained low defect density is necessary to obtain both high ON-state current and low OFF-state leakage in a mixed As/Sb TFET structure for high-performance and lower-power logic applications.

Zhu, Y.; Jain, N.; Vijayaraghavan, S.; Hudait, M. K. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Mohata, D. K.; Datta, S. [Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania-16802 (United States); Lubyshev, D.; Fastenau, J. M.; Liu, Amy K. [IQE Inc., Bethlehem, Pennsylvania-18015 (United States); Monsegue, N. [Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2012-11-01T23:59:59.000Z

52

Analysis of plasma-magnetic photonic crystal with a tunable band gap  

SciTech Connect

In this paper, electromagnetic wave propagation through the one-dimensional plasma-magnetic photonic crystal in the presence of external magnetic field has been analyzed. The dispersion relation, transmission and reflection coefficients have been obtained by using the transfer matrix method. It is investigated how photonic band gap of photonic crystals will be tuned when both dielectric function {epsilon} and magnetic permeability {mu} of the constitutive materials, depend on applied magnetic field. This is shown by one dimensional photonic crystals consisting of plasma and ferrite material layers stacked alternately.

Mehdian, H.; Mohammadzahery, Z.; Hasanbeigi, A. [Department of Physics and Plasma Research Institute of Tarbiat Moallem University, 49 Dr Mofatteh Avenue, Tehran 15614 (Iran, Islamic Republic of)

2013-04-15T23:59:59.000Z

53

Ce-doped EuO: Magnetic properties and the indirect band gap  

Science Conference Proceedings (OSTI)

We have prepared and investigated thin films of EuO doped with the rare-earth element cerium. X-ray diffraction, scanning electron microscopy, and energy dispersive x-ray spectroscopy were used to determine the quality of these films prepared by pulsed laser deposition. Ce doping leads to an enhanced Curie temperature near 150 K, close to that seen for oxygen-deficient EuO{sub 1-x}. However, the magnetization of Ce-doped EuO exhibits differences from that observed for Gd-doped and oxygen-deficient samples. The high-resolution angular-resolved photoemission from Ce-doped EuO reveals filling of conduction-band states near the X point. This indicates that the band gap in EuO is indirect, and that at 2% doping Ce-doped EuO{sub 1-x} is at least semimetallic.

Liu Pan; Tang Jinke [Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071 (United States); Colon Santana, Juan A.; Belashchenko, Kirill D.; Dowben, Peter A. [Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299 (United States)

2011-04-01T23:59:59.000Z

54

Correlation between surface chemistry, density and band gap in nanocrystalline WO3 thin films  

Science Conference Proceedings (OSTI)

Nanocrystalline WO3 thin films were produced by sputter-deposition by varying the ratio of argon to oxygen in the reactive gas mixture during deposition. The surface chemistry, physical characteristics, and optical properties of nanocrystalline WO3 films were evaluated using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray reflectivity (XRR), and spectrophotometric measurements. The effect of ultra-microstructure was significant on the optical properties of WO3 films. The XPS analyses indicate the formation of stoichiometric WO3 with tungsten existing in fully oxidized valence state (W6+). However, WO3 films grown at high oxygen concentration (>60%) in the sputtering gas mixture were over stoichiometric with excess oxygen. XRR simulations, which are based on isotropic WO3 film - SiO2 interface - Si substrate model, indicate that the density of WO3 films is sensitive to the oxygen content in the sputtering gas. The spectral transmission of the films increased with the increasing oxygen. The band gap of these films increases from 2.78 eV to 3.25 eV with increasing oxygen. A direct correlation between the film-density and band gap in nanocrystalline WO3 films is established based on the observed results.

Vemuri, Venkata Rama Ses; Engelhard, Mark H.; Ramana, C.V.

2012-03-01T23:59:59.000Z

55

Pushing the Gradient Limitations of Superconducting Photonic Band Gap Structure Cells  

SciTech Connect

Superconducting photonic band gap resonators present us with unique means to place higher order mode couples in an accelerating cavity and efficiently extract HOMs. An SRF PBG resonator with round rods was successfully tested at LANL demonstrating operation at 15 MV/m. Gradient in the SRF PBG resonator was limited by magnetic quench. To increase the quench threshold in PBG resonators one must design the new geometry with lower surface magnetic fields and preserve the resonator's effectiveness for HOM suppression. The main objective of this research is to push the limits for the high-gradient operation of SRF PBG cavities. A NCRF PBG cavity technology is established. The proof-of-principle operation of SRF PBG cavities is demonstrated. SRF PBG resonators are effective for outcoupling HOMs. PBG technology can significantly reduce the size of SRF accelerators and increase brightness for future FELs.

Simakov, Evgenya I. [Los Alamos National Laboratory; Haynes, William B. [Los Alamos National Laboratory; Kurennoy, Sergey S. [Los Alamos National Laboratory; Shchegolkov, Dmitry [Los Alamos National Laboratory; O'Hara, James F. [Los Alamos National Laboratory; Olivas, Eric R. [Los Alamos National Laboratory

2012-06-07T23:59:59.000Z

56

Catalyzed Water Oxidation by Solar Irradiation of Band-Gap-Narrowed Semiconductors (Part 2. Overview).  

DOE Green Energy (OSTI)

The objectives of this report are: (1) Investigate the catalysis of water oxidation by cobalt and manganese hydrous oxides immobilized on titania or silica nanoparticles, and dinuclear metal complexes with quinonoid ligands in order to develop a better understanding of the critical water oxidation chemistry, and rationally search for improved catalysts. (2) Optimize the light-harvesting and charge-separation abilities of stable semiconductors including both a focused effort to improve the best existing materials by investigating their structural and electronic properties using a full suite of characterization tools, and a parallel effort to discover and characterize new materials. (3) Combine these elements to examine the function of oxidation catalysts on Band-Gap-Narrowed Semiconductor (BGNSC) surfaces and elucidate the core scientific challenges to the efficient coupling of the materials functions.

Fujita,E.; Khalifah, P.; Lymar, S.; Muckerman, J.T.; Rodriguez, J.

2008-03-18T23:59:59.000Z

57

Catalyzed Water Oxidation by Solar Irradiation of Band-Gap-Narrowed Semiconductors (Part 1. Overview).  

DOE Green Energy (OSTI)

The objectives of this report are: (1) Investigate the catalysis of water oxidation by cobalt and manganese hydrous oxides immobilized on titania or silica nanoparticles, and dinuclear metal complexes with quinonoid ligands in order to develop a better understanding of the critical water oxidation chemistry, and rationally search for improved catalysts. (2) Optimize the light-harvesting and charge-separation abilities of stable semiconductors including both a focused effort to improve the best existing materials by investigating their structural and electronic properties using a full suite of characterization tools, and a parallel effort to discover and characterize new materials. (3) Combine these elements to examine the function of oxidation catalysts on Band-Gap-Narrowed Semiconductor (BGNSC) surfaces and elucidate the core scientific challenges to the efficient coupling of the materials functions.

Fujita,E.; Khalifah, P.; Lymar, S.; Muckerman, J.T.; Rodgriguez, J.

2008-03-18T23:59:59.000Z

58

Time-Resolved Femtosecond Laser Desorption from Wide-BandGap Single Crystals  

Science Conference Proceedings (OSTI)

We have used femtosecond laser pulse pairs to measure the positive ion yield, from wide band-gap single crystals, as a function of time-delay between pulses. Two-pulse correlation allows direct observation of solid state and surface dynamics on an ultrafast timescale. The ion yield, from 265 nm irradiated MgO and KBr, depends critically on the time delay between two sub-threshold pulses. For example, the Mg+ desorption yield displays three distinct features; a coherence peak, followed by rise, and decay features. In contract, the yield of K+ from KBr displays only the coherence peak and picosecond decay features. The data suggest, that although the nanosecond ion desorption mechanism is dominated by defect photoabsorption, significant electron-hole pair production may contribute to the desorption mechanism following femtosecond excitation. Nanosecond photoexcitation of KBr near 6.4 eV leads to desorption of hyperthermal neutral bromine atoms without a significant thermal velocity component. Two-photon femtosecond excitation at 3.2 eV produces very similar results. Multiphoton femtosecond excitation provides an efficient excitation mechanism of the wide-gap material. These results are likely general for ionic crystals and are consistent with a recently described theoretical model.

Hess, Wayne P. (BATTELLE (PACIFIC NW LAB)); Joly, Alan G. (BATTELLE (PACIFIC NW LAB)); Beck, Kenneth M. (University of Central Florida ); Dickinson, J T. (8392); Claude R. Phipps

2002-09-01T23:59:59.000Z

59

Electronic structure of Pt based topological Heusler compounds with C1{sub b} structure and 'zero band gap'  

SciTech Connect

Besides of their well-known wide range of properties it was recently shown that many of the heavy Heusler semiconductors with 1:1:1 composition and C1{sub b} structure exhibit a zero band gap behavior and are topological insulators induced by their inverted band structure. In the present study, the electronic structure of the Heusler compounds PtYSb and PtLaBi was investigated by bulk sensitive hard x-ray photoelectron spectroscopy. The measured valence band spectra are clearly resolved and in well agreement to the first-principles calculations of the electronic structure of the compounds. The experimental results give clear evidence for the zero band gap state.

Ouardi, Siham; Shekhar, Chandra; Fecher, Gerhard H.; Kozina, Xeniya; Stryganyuk, Gregory; Felser, Claudia [Institut fuer Anorganische Chemie und Analytische Chemie, Johannes Gutenberg-Universitaet, D-55099 Mainz (Germany); Ueda, Shigenori; Kobayashi, Keisuke [NIMS Beamline Station at SPring-8, National Institute for Materials Science, Hyogo 679-5148 (Japan)

2011-05-23T23:59:59.000Z

60

Importance of Solubilizing Group and Backbone Planarity in Low Band Gap Polymers for High Performance Ambipolar field-effect Transistors  

Science Conference Proceedings (OSTI)

We investigated the performance of ambipolar field-effect transistors based on a series of alternating low band gap polymers of oligothiophene and diketopyrrolopyrrole (DPP). The polymers contain oligothiophene units of terthiophene [T3] and thiophene-thienothiophene-thiophene [T2TT] and DPP units carrying branched alkyl chains of 2-hexyldecyl [HD] or 2-octyldodecyl [OD]. The structural variation allows us to do a systematic study on the relationship between the interchain stacking/ordering of semiconducting polymers and their resulting device performance. On the basis of synchrotron X-ray diffraction and atomic force microscopy measurements on polymer films, we found that longer branched alkyl side chains, i.e., OD, and longer and more planar oligothiophene, i.e., T2TT, generate the more crystalline structures. Upon thermal annealing, the crystallinity of the polymers was largely improved, and polymers containing a longer branched alkyl chain responded faster because longer alkyl chains have larger cohesive forces than shorter chains. For all the polymers, excellent ambipolar behavior was observed with a maximum hole and electron mobility of 2.2 and 0.2 cm{sup 2} V{sup -1} s{sup -1}, respectively.

Lee, Joong Suk; Son, Seon Kyoung; Song, Sanghoon; Kim, Hyunjung; Lee, Dong Ryoul; Kim, Kyungkon; Ko, Min Jae; Choi, Dong Hoon; Kim, BongSoo; Cho, Jeong Ho (UST-Korea); (KUS); (Sungkyunkwan); (Soongsil U); (Sogang)

2012-06-13T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Novel wide band gap materials for highly efficient thin film tandem solar cells  

SciTech Connect

Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PV�s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

Brian E. Hardin, Stephen T. Connor, Craig H. Peters

2012-06-11T23:59:59.000Z

62

Band gap enhancement of glancing angle deposited TiO{sub 2} nanowire array  

SciTech Connect

Vertically oriented TiO{sub 2} nanowire (NW) arrays were fabricated by glancing angle deposition technique. Field emission-scanning electron microscopy shows the formation of two different diameters {approx}80 nm and {approx}40 nm TiO{sub 2} NW for 120 and 460 rpm azimuthal rotation of the substrate. The x-ray diffraction and Raman scattering depicted the presence of rutile and anatase phase TiO{sub 2}. The overall Raman scattering intensity decreased with nanowire diameter. The role of phonon confinement in anatase and rutile peaks has been discussed. The red (7.9 cm{sup -1} of anatase E{sub g}) and blue (7.4 cm{sup -1} of rutile E{sub g}, 7.8 cm{sup -1} of rutile A{sub 1g}) shifts of Raman frequencies were observed. UV-vis absorption measurements show the main band absorption at 3.42 eV, 3.48 eV, and {approx}3.51 eV for thin film and NW prepared at 120 and 460 rpm, respectively. Three fold enhance photon absorption and intense light emission were observed for NW assembly. The photoluminescence emission from the NW assembly revealed blue shift in main band transition due to quantum confinement in NW structures.

Chinnamuthu, P.; Mondal, A.; Singh, N. K.; Dhar, J. C. [National Institute of Technology Agartala, Department of Electronics and Communication Engineering, Jirania, Tripura (West) 799055 (India); Chattopadhyay, K. K. [Jadavpur University, Department of Physics, Kolkata 700032 (India); Bhattacharya, Sekhar [SSN Research Centre, Tamil Nadu 603110 (India)

2012-09-01T23:59:59.000Z

63

Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends  

E-Print Network (OSTI)

Donor-acceptor (D-A) type copolymers show great potential for the application in the active layer of organic solar cells. Nevertheless the nature of the excited states, the coupling mechanism and the relaxation pathways following photoexcitation are yet to be clarified. We carried out comparative measurements of the steady state absorption and photoluminescence (PL) on the copolymer poly[N-(1-octylnonyl)-2,7-carbazole] -alt-5,5-[4',7' -di(thien-2-yl)-2',1',3' -benzothiadiazole] (PCDTBT), its building blocks as well as on the newly synthesized N-(1-octylnonyl)-2,7-bis-[(5-phenyl)thien-2-yl)carbazole (BPT-carbazole) (see Figure 1). The high-energy absorption band (HEB) of PCDTBT was identified with absorption of carbazoles with adjacent thiophene rings while the low-energy band (LEB) originates instead from the charge transfer (CT) state delocalized over the aforementioned unit with adjacent benzothiadiazole group. Photoexcitation of the HEB is followed by internal relaxation prior the radiative decay to the ground state. Adding PC70BM results in the efficient PL quenching within the first 50 ps after excitation. From the PL excitation experiments no evidence for a direct electron transfer from the HEB of PCDTBT towards the fullerene acceptor was found, therefore the internal relaxation mechanisms within PCDTBT can be assumed to precede. Our findings indicate that effective coupling between copolymer building blocks governs the photovoltaic performance of the blends.

Björn Gieseking; Berthold Jäck; Eduard Preis; Stefan Jung; Michael Forster; Ullrich Scherf; Carsten Deibel; Vladimir Dyakonov

2012-06-20T23:59:59.000Z

64

Wide-band-gap solar cells with high stabilized performance. Annual subcontract report, July 15, 1994--July 14, 1995  

DOE Green Energy (OSTI)

This report describes work performed by Pennsylvania State University in collaboration with the NREL Wide-Band-Gap Team. The goal of this team is to develop a single-junction, wide-gap solar cell with good stabilized parameters. The objectives of the subcontract are to (1) develop a cost-effective amorphous silicon PV technology to foster a viable amorphous silicon PV industry in the US, ensuring that this industry remains a world leader in the a-Si technology; (2) help the US a-Si PV industry achieve the US DOE PV Program FY 1995 milestone of 10% stable efficiency commercial thin-film modules; (3) help the US a-Si PV industry achieve 12% stable efficiency multi-junction a-Si:H modules for large-scale utility use by the year 2005. Issues covered in this report include (1) improved understanding of stability in materials and solar cells, (2) intrinsic materials optimization, (3) solar cells optimized for intrinsic layer performance, (4) p-type layer optimization, (5) top cell interfaces, and (6) solar cell grading.

Wronski, C.R.; Collins, R.W.; Fonash, S.J. [Pennsylvania State Univ., University Park, PA (United States)

1995-11-01T23:59:59.000Z

65

Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio  

Science Conference Proceedings (OSTI)

Lateral composition modulated (LCM) GaInP structures were grown on (001) GaAs substrate by molecular beam epitaxy with different V/III flux ratios. Band gap of LCM structures could be tuned from 1.93 eV to 1.83 eV by decreasing flux ratio while maintaining the same photoluminescence intensity, enhanced light absorption, and widened absorption spectrum. It is shown that for band gap tuning of LCM structures, flux ratio adjustment is a more viable method compared to growth temperature adjustment.

Park, K. W. [School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Park, C. Y. [Micro Systems Laboratory, Samsung Advanced Institute of Technology, Yongin 446-712 (Korea, Republic of); Lee, Y. T. [School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Department of Photonics and Applied Physics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

2012-07-30T23:59:59.000Z

66

Gallium arsenide-based ternary compounds and multi-band-gap solar cell research. Annual subcontract report, 15 April 1988--14 June 1990  

DOE Green Energy (OSTI)

Aim of this contract is the achievement of a high-efficiency, low-cost solar cell. The basic approach to the problem is centered upon the heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The growth technique employed is metalorganic chemical vapor deposition. The silicon wafer may serve as a mechanical substrate and ohmic contact for a single-junction device, or may contain a p-n junction of its own and form the bottom cell of a two junction tandem solar cell structure. The III-V material for the single-junction case is GaAs and for the two-junction case is either GaAlAs or GaAsP, either material having the proper composition to yield a band gap of approximately 1.7 eV. Results achieved in this contract include the following: (1) a 17.6% efficient GaAs-on-Si solar cell; (2) an 18.5% efficient GaAs-on-Si concentrator solar cell at 400 suns; (3) a 24.8% efficient GaAs-on-GaAs solar cell; (4) a 28.7% efficient GaAs-on-GaAs concentrator solar cell at 200 suns; (5) measurement of the effects of dislocation density and emitter doping on GaAs cells; and (6) improvements in the growth process to achieve reproducible thin AlGaAs window layers with low recombination velocities and environmental stability.

Vernon, S. [Spire Corp., Bedford, MA (United States)

1993-02-01T23:59:59.000Z

67

Toward Photochemical Water Splitting Using Band-Gap-Narrowed Semiconductors and Transition-Metal Based Molecular Catalysts  

DOE Green Energy (OSTI)

We are carrying out coordinated theoretical and experimental studies of toward photochemical water splitting using band-gap-narrowed semiconductors (BGNSCs) with attached multi-electron molecular water oxidation and hydrogen production catalysts. We focus on the coupling between the materials properties and the H{sub 2}O redox chemistry, with an emphasis on attaining a fundamental understanding of the individual elementary steps in the following four processes: (1) Light-harvesting and charge-separation of stable oxide or oxide-derived semiconductors for solar-driven water splitting, including the discovery and characterization of the behavior of such materials at the aqueous interface; (2) The catalysis of the four-electron water oxidation by dinuclear hydroxo transition-metal complexes with quinonoid ligands, and the rational search for improved catalysts; (3) Transfer of the design principles learned from the elucidation of the DuBois-type hydrogenase model catalysts in acetonitrile to the rational design of two-electron hydrogen production catalysts for aqueous solution; (4) Combining these three elements to examine the function of oxidation catalysts on BGNSC photoanode surfaces and hydrogen production catalysts on cathode surfaces at the aqueous interface to understand the challenges to the efficient coupling of the materials functions.

Muckerman,J.T.; Rodriguez, J.A.; Fujita, E.

2009-06-07T23:59:59.000Z

68

Gallium arsenide-based ternary compounds and multi-band-gap solar cell research. Final subcontract report, 1 April 1988--31 March 1990  

DOE Green Energy (OSTI)

This report describes work to achieve a high-efficiency, low-cost solar cell. The basic approach to the problem is centered upon the heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The growth technique employed throughout this work is metal-organic chemical vapor deposition. The silicon wafer may serve as a mechanical substrate and ohmic contact for a single-junction device, or it may contain a p-n junction of its own and form the bottom cell of a two-junction tandem solar cell structure. The III-V material for the single-junction case is GaAs, and for the two-junction case it is either GaAlAs or GaAsP, either material having the proper composition to yield a band gap of approximately 1.7 eV. Results achieved in this contract include (1) a 17.6%-efficient GaAs-on-Si solar cell; (2) an 18.5%-efficient GaAs-on-Si concentrator solar cell at 400 suns; (3) a 24.8%-efficient GaAs-on-GaAs solar cell; (4) a 28.7%-efficient GaAs-on-GaAs concentrator solar cell at 200 suns; (5) the measurement of the effects of dislocation density and emitter doping on GaAs cells; and (6) improvements in the growth process to achieve reproducible thin AlGaAs window layers with low recombination velocities and environmental stability.

Vernon, S. [Spire Corp., Bedford, MA (United States)

1993-07-01T23:59:59.000Z

69

Quasicontinuous decay spectra of superdeformed bands in {sup 192,194}Pb and energy gaps in level density at moderate angular momenta  

Science Conference Proceedings (OSTI)

The quasicontinuous spectra associated with the decay of the superdeformed bands in {sup 192,194}Pb have been extracted. The rapid rise in the {gamma}-ray intensity in these spectra for E{sub {gamma}}(less-or-similar sign)1.8 MeV is interpreted to arise from the dramatic increase in level density above the energy gap for even-even nuclei. This energy gap has been found to be {approx_equal}0.95(10) MeV at 6({Dirac_h}/2{pi}) in {sup 194}Pb and (approx =)0.4{sub -0.1}{sup +0.4} MeV at 10({Dirac_h}/2{pi}) in {sup 192}Pb. (c) 2000 The American Physical Society.

McNabb, D. P. [Department of Physics and Astronomy, Rutgers University, New Brunswick, New Jersey 08903 (United States); Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Cizewski, J. A. [Department of Physics and Astronomy, Rutgers University, New Brunswick, New Jersey 08903 (United States); Khoo, T. L. [Argonne National Laboratory, Argonne, Illinois 60439 (United States); Lauritsen, T. [Argonne National Laboratory, Argonne, Illinois 60439 (United States); Hauschild, K. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Ding, K. Y. [Department of Physics and Astronomy, Rutgers University, New Brunswick, New Jersey 08903 (United States); Fotiades, N. [Department of Physics and Astronomy, Rutgers University, New Brunswick, New Jersey 08903 (United States); Younes, W. [Department of Physics and Astronomy, Rutgers University, New Brunswick, New Jersey 08903 (United States); Archer, D. E. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Bauer, R. W. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)] (and others)

2000-03-01T23:59:59.000Z

70

Method for producing a thin sample band in a microchannel device  

DOE Patents (OSTI)

The present invention improves the performance of microchannel systems for chemical and biological synthesis and analysis by providing a method and apparatus for producing a thin band of a species sample. Thin sample bands improve the resolution of microchannel separation processes, as well as many other processes requiring precise control of sample size and volume. The new method comprises a series of steps in which a species sample is manipulated by controlled transport through a junction formed at the intersection of four or more channels. A sample is first inserted into the end of one of these channels in the vicinity of the junction. Next, this sample is thinned by transport across the junction one or more times. During these thinning steps, flow enters the junction through one of the channels and exists through those remaining, providing a divergent flow field that progressively stretches and thins the band with each traverse of the junction. The thickness of the resulting sample band may be smaller than the channel width. Moreover, the thickness of the band may be varied and controlled by altering the method alone, without modification to the channel or junction geometries. The invention is applicable to both electroosmotic and electrophoretic transport, to combined electrokinetic transport, and to some special cases in which bulk fluid transport is driven by pressure gradients. It is further applicable to channels that are open, filled with a gel or filled with a porous or granular material.

Griffiths, Stewart K. (Livermore, CA); Nilson, Robert H. (Cardiff, CA)

2004-08-03T23:59:59.000Z

71

Low-band-gap, amorphous-silicon-based alloys by chemical vapor deposition: Annual subcontract report, 1 October 1985-31 January 1986  

DOE Green Energy (OSTI)

This research was conducted to determine the potential of photochemical vapor deposition (photo-CVD) for producing high-quality, low-band-gap amorphous silicon germanium alloys for use in high-efficiency, multijunction, thin-film photovoltaic solar cells. A photo-CVD reactor for mercury-sensitized photolysis of silane-germane and disilane-germane mixtures was developed. Alloy thin films of undoped a-Si/sub 1-x/Ge/sub x/:H were deposited using mercury vapor mixed with SiH/sub 4/ or Si/sub 2/H/sub 6/, GeH/sub 4/, and diluent gas of Ar, He, or H/sub 2/. Materials properties were characterized by measurements of Ge content, optical transmission and reflection, and dark and photo-conductivity. Opto-electronic properties of photo-CVD a-Si/sub 1-x/Ge/sub x/:H were found to be comparable to glow discharge and sputtered materials. Moreover, p-i-n solar cells with low-band-gap i-layers were able to be fabricated by photo-CVD.

Baron, B.N.; Jackson, S.C.

1986-12-01T23:59:59.000Z

72

Low-band-gap, amorphous-silicon-based alloys by photochemical vapor deposition: Final report, 1 October 1985--30 November 1986  

DOE Green Energy (OSTI)

Thin films of hydrogenated amorphous silicon-germanium alloys were deposited by mercury-sensitized photochemical vapor deposition using a novel photo-CVD reactor. Thin films of a-Si/sub 1-x/Ge/sub x/:H with 0 less than or equal to x less than or equal to 1 and 1.0 less than E/sub g/ less than 1.8 eV were deposited from mixtures of silane and disilane with germane and inert gas diluents at substrate temperatures from 160/degree/ to 200/degree/C. Alloy films were characterized by measurements of photo- and dark conductivity, electron mobility-lifetime product, sub-band-gap absorption, and density of states. Dilution with hydrogen increased the photoconductivity to 10/sup /minus/5/ Scm and mobility-lifetime product to 6 /times/ 10/sup /minus/8/ cm/sup 2/V for alloys having a band gap of 1.4 eV.

Baron, B.N.; Hegedus, S.S.; Jackson, S.C.

1988-02-01T23:59:59.000Z

73

Dual-band pixelless upconversion imaging devices Hui Lian Hao,1  

E-Print Network (OSTI)

-band detector inte- grated with a GaN/AlGaN violet light emitting diode. On the basis of the photoresponseAs/AlGaAs quantum well infrared photodetector (QWIP) and an InGaAs/GaAs near-infrared (NIR) light emitting diode

Matsik, Steven G.

74

Solar Energy Materials & Solar Cells 91 (2007) 15991610 Improving solar cell efficiency using photonic band-gap materials  

E-Print Network (OSTI)

Solar Energy Materials & Solar Cells 91 (2007) 1599­1610 Improving solar cell efficiency using Propulsion Laboratory, California Institute of Technology, Mail Stop T1714 106, 4800 Oak Grove Drive and reliable solar-cell devices is presented. We show that due their ability to modify the spectral and angular

Dowling, Jonathan P.

75

Wide band gap solar cells with high stabilized performance. Annual technical report, 15 July 1995--15 July 1996  

DOE Green Energy (OSTI)

This report describes work on an improved understanding of stability in materials and silicon solar cells. Topics include novel intrinsic materials optimization; solar cells optimized for p- and i-layer performance; novel p-type materials; interfaces; and device modeling.

Wronski, C.R.; Collins, R.W.; Fujiwara, H. [Pennsylvania State Univ., University Park, PA (United States)] [and others

1997-01-01T23:59:59.000Z

76

Chorus: scalable in-band trust establishment for multiple constrained devices over the insecure wireless channel  

Science Conference Proceedings (OSTI)

Secure initial trust establishment for multiple resource constrained devices is a fundamental issue underlying wireless networks. A number of protocols have been proposed for secure key deployment among nodes without prior shared secrets (ad hoc), however ... Keywords: key agreement, message authentication, physical-layer, security protocols, trust establishment, wireless network

Yantian Hou; Ming Li; Joshua D. Guttman

2013-04-01T23:59:59.000Z

77

Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix  

DOE Patents (OSTI)

A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

Forrest, Stephen R. (Ann Arbor, MI)

2008-08-19T23:59:59.000Z

78

Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier  

DOE Patents (OSTI)

A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

Forrest, Stephen R. (Ann Arbor, MI); Wei, Guodan (Ann Arbor, MI)

2010-07-06T23:59:59.000Z

79

Functionalized Graphene Nanoroads for Quantum Well Device  

Science Conference Proceedings (OSTI)

Using density functional theory, a series of calculations of structural and electronic properties of Si-substituted graphene were conducted. Through substituting C atoms by Si atoms on graphene in the present study, we found that the band gap of graphene can be continuously tuned with differently substitutional concentration. To utilize such substitution-induced band gap changes, we proposed a special design to fabricate graphene-based quantum well device.

Zhou, Yungang; Yang, Ping; Wang, Zhiguo; Xiao, Hai Yan; Zu, Xiaotao T.; Sun, Xin; Khaleel, Mohammad A.; Gao, Fei

2011-03-02T23:59:59.000Z

80

High Efficiency Narrow Gap and Tandem Junction Devices: Final Technical Report, 1 May 2002--31 October 2004  

DOE Green Energy (OSTI)

The work described in this report uses a modified pulsed plasma-enhanced chemical vapor deposition (PECVD) technique that has been successfully developed to fabricate state-of-the-art nc-Si materials and devices. Specifically, we have achieved the following benchmarks: nc SiH device with an efficiency of 8% achieved at a deposition rate of {approx}1 A/s; nc SiH device with an efficiency of 7% achieved at a deposition rate of {approx}5 A/s; large-area technology developed using pulsed PECVD with uniformity of +/-5% over 25 cm x 35 cm; devices have been fabricated in the large-area system (part of Phase 3); an innovative stable four-terminal (4-T) tandem-junction device of h> 9% fabricated. (Note that the 4-T device was fabricated with existing technology base and with further development can reach stabilized h of 12%); and with improvement in Voc {approx} 650 mV, from the current value of 480 mV can lead to stable 4-T device with h>16%. Toward this objective, modified pulsed PECVD was developed where layer- by-layer modification of nc-SiH has been achieved. (Note that due to budget cuts at NREL, this project was curtailed by about one year.)

Madan, A

2005-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Bulk Heterojunction Organic Photovoltaic Devices Using Dendrimers  

Science Conference Proceedings (OSTI)

A family of prototype ..pi..-conjugated dendrimers has been synthesized and incorporated into solution-processable organic photovoltaic (OPV) devices. Bulk heterojunction devices were fabricated by blending the dendrimers with a solubilized fullerene. The best of these initial devices, which were not optimized for morphology, exhibited external quantum efficiencies of 22% at peak wavelength. It was found that 3-arm dendrimers, when sufficiently soluble, yielded higher photocurrents than their 4-arm counterparts. This was attributed to better planarity and intermolecular alignment of the 3-arm version. Device efficiency was seen to increase with increasing arm length. A reduced-band gap dendrimer was synthesized by attaching electron-withdrawing groups onto the core to yield an optical band gap of 1.82 eV.

Kopidakis, N.; Mitchell, W. J.; Bozell, J. J.; Piris, J.; Ginley, D. S.; Rumbles, G.; Shaheen S. E.

2005-11-01T23:59:59.000Z

82

Hybrid method of making an amorphous silicon P-I-N semiconductor device  

DOE Patents (OSTI)

The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

Moustakas, Theodore D. (Berkeley Heights, NJ); Morel, Don L. (Woodland Hills, CA); Abeles, Benjamin (Princeton, NJ)

1983-10-04T23:59:59.000Z

83

Welding arc gap ionization device  

SciTech Connect

An alpha emitting isotope is positioned near the tip of a TIG welding electrode so that the alpha radiation can provide an ionized path between the electrode and the workpiece.

Schweikhardt, George M. (Richland, WA)

1976-01-01T23:59:59.000Z

84

Spark gap with low breakdown voltage jitter  

SciTech Connect

Novel spark gap devices and electrodes are disclosed. The novel spark gap devices and electrodes are suitable for use in a variety of spark gap device applications. The shape of the electrodes gives rise to local field enhancements and reduces breakdown voltage jitter. Breakdown voltage jitter of approximately 5% has been measured in spark gaps according the invention. Novel electrode geometries and materials are disclosed.

Rohwein, Gerald J. (Albuquerque, NM); Roose, Lars D. (Albuquerque, NM)

1996-01-01T23:59:59.000Z

85

Broad-band beam buncher  

DOE Patents (OSTI)

A broad-band beam buncher is disclosed, comprising an evacuated housing, an electron gun therein for producing an electron beam, a buncher cavity having entrance and exit openings through which the beam is directed, grids across such openings, a source providing a positive DC voltage between the cavity and the electron gun, a drift tube through which the electron beam travels in passing through such cavity, grids across the ends of such drift tube, gaps being provided between the drift tube grids and the entrance and exit grids, a modulator for supplying an ultrahigh frequency modulating signal to the drift tube for producing velocity modulation of the electrons in the beam, a drift space in the housing through which the velocity modulated electron beam travels and in which the beam is bunched, and a discharge opening from such drift tube and having a grid across such opening through which the bunched electron beam is discharged into an accelerator or the like. The buncher cavity and the drift tube may be arranged to constitute an extension of a coaxial transmission line which is employed to deliver the modulating signal from a signal source. The extended transmission line may be terminated in its characteristic impedance to afford a broad-band response and the device as a whole designed to effect broad-band beam coupling, so as to minimize variations of the output across the response band.

Goldberg, David A. (Walnut Creek, CA); Flood, William S. (Berkeley, CA); Arthur, Allan A. (Martinez, CA); Voelker, Ferdinand (Orinda, CA)

1986-01-01T23:59:59.000Z

86

Plasma-Assisted Co-evaporation of S and Se for Wide Band Gap Chalcopyrite Photovoltaics: Final Subcontract Report, December 2001 -- April 2005  

DOE Green Energy (OSTI)

In this work, ITN Energy Systems (ITN) and lower-tier subcontractor Colorado School of Mines (CSM) explore the replacement of the molecular chalcogen precursors during deposition (e.g., Se2 or H2Se) with more reactive chalcogen monomers or radicals (e.g., Se). Molecular species are converted to atomic species in a low-pressure inductively coupled plasma (ICP). This program explored the use of plasma-activated chalcogen sources in CIGS co-evaporation to lower CIGS deposition temperature, increase utilization, increase deposition rate, and improve S:Se stoichiometry control. Plasma activation sources were designed and built, then operated and characterized over a wide range of conditions. Optical emission and mass spectrometry data show that chalcogens are effectively dissociated in the plasma. The enhanced reactivity achieved by the plasma processing was demonstrated by conversion of pre-deposited metal films to respective chalcogen-containing phases at low temperature and low chalcogen flux. The plasma-assisted co-evaporation (PACE) sources were also implemented in CIGS co-evaporation. No benefit from PACE was observed in device results, and frequent deposition failures occurred.

Repins, I.; Wolden, C.

2005-08-01T23:59:59.000Z

87

Medical Device Interoperability  

Science Conference Proceedings (OSTI)

... The research effort includes a gap analysis of the medical device communication standard IEEE 11073 versus use case scenarios outlined in ...

2011-03-14T23:59:59.000Z

88

Method for Creating Photonic Band Gap Materials  

Innovative microstructures that can direct light in a manner similar to the way semiconductors can influence electrons can be produced by creating ...

89

Gap and stripline combined monitor  

DOE Patents (OSTI)

A combined gap and stripline monitor device for measuring the intensity and position of a charged particle beam bunch in a beam pipe of a synchrotron radiation facility is disclosed. The monitor has first and second beam pipe portions with an axial gap therebetween. An outer pipe cooperates with the first beam pipe portion to form a gap enclosure, while inner strips cooperate with the first beam pipe portion to form a stripline monitor, with the stripline length being the same as the gap enclosure length. 4 figs.

Yin, Y.

1986-08-19T23:59:59.000Z

90

Gap and stripline combined monitor  

DOE Patents (OSTI)

A combined gap and stripline monitor device (10) for measuring the intensity and position of a charged particle beam bunch in a beam pipe of a synchotron radiation facility. The monitor has first and second beam pipe portions (11a, 11b) with an axial gap (12) therebetween. An outer pipe (14) cooperates with the first beam pipe portion (11a) to form a gap enclosure, while inner strips (23a-d) cooperate with the first beam pipe portion (11a) to form a stripline monitor, with the stripline length being the same as the gap enclosure length.

Yin, Yan (Palo Alto, CA)

1986-01-01T23:59:59.000Z

91

Thermovoltaic semiconductor device including a plasma filter  

DOE Patents (OSTI)

A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

Baldasaro, Paul F. (Clifton Park, NY)

1999-01-01T23:59:59.000Z

92

Photonic density of states maps for design of photonic crystal devices  

E-Print Network (OSTI)

In this work, it has been investigated whether photonic density of states maps can be applied to the design of photonic crystal-based devices. For this reason, comparison between photonic density of states maps and transmittance maps was carried out. Results of comparison show full correspondence between these characteristics. Photonic density of states maps appear to be preferable for the design of photonic crystal devices, than photonic band gap maps presented earlier and than transmittance maps shown in the paper.

Sukhoivanov, I A; Lucio, J A Andrade; Mendez, E Alvarado; Trejo-Duran, M; Torres-Cisneros, M; 10.1016/j.mejo.2007.07.091

2010-01-01T23:59:59.000Z

93

Active Terahertz Metamaterial Devices  

NLE Websites -- All DOE Office Websites (Extended Search)

Active Terahertz Metamaterial Devices Active Terahertz Metamaterial Devices Active Terahertz Metamaterial Devices Metamaterial structures are taught which provide for the modulation of terahertz frequency signals. Available for thumbnail of Feynman Center (505) 665-9090 Email Active Terahertz Metamaterial Devices Metamaterial structures are taught which provide for the modulation of terahertz frequency signals. Each element within an array of metamaterial (MM) elements comprises multiple loops and at least one gap. The MM elements may comprise resonators with conductive loops and insulated gaps, or the inverse in which insulated loops are present with conductive gaps; each providing useful transmissive control properties. The metamaterial elements are fabricated on a semiconducting substrate configured with a

94

Monolithic multi-color light emission/detection device  

DOE Patents (OSTI)

A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber.

Wanlass, Mark W. (Golden, CO)

1995-01-01T23:59:59.000Z

95

Banded electromagnetic stator core  

DOE Patents (OSTI)

A stator core for an electromagnetic pump includes a plurality of circumferentially adjoining groups of flat laminations disposed about a common centerline axis and collectively defining a central bore and a discontinuous outer perimeter, with adjacent groups diverging radially outwardly to form V-shaped gaps. An annular band surrounds the groups and is predeterminedly tensioned to clamp together the laminations, and has a predetermined flexibility in a radial direction to form substantially straight bridge sections between the adjacent groups. 5 figures.

Fanning, A.W.; Gonzales, A.A.; Patel, M.R.; Olich, E.E.

1994-04-05T23:59:59.000Z

96

A thermovoltaic semiconductor device including a plasma filter  

DOE Patents (OSTI)

A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential are disclosed. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

Baldasaro, Paul F.

1997-12-01T23:59:59.000Z

97

Bird Banding  

NLE Websites -- All DOE Office Websites (Extended Search)

Bird Banding Bird Banding Name: Matthew Location: N/A Country: N/A Date: N/A Question: I am researching why the US fish and wildlife agency bands ducks and what information is used to set hunting daily and possession limits. Replies: Matt, The USFW service has been doing this for decades to have statistical data on the population fluctuations of all birds. This information serves to warn when over hunting has taken a toll on a species or if a species is declining due to habitat loss or whatever. This information also indicates need for increased habitat areas as well as possible hunting restrictions. This organization has a formula for setting hunting limits based upon the data received from banding. It is important that all hunters return these bands for they are the ones who will suffer if the information is not there. Females of any species are the most important for reproduction and often they are protected over the males. This should explain the differences in what can be bagged.

98

NaCu(Ta{sub 1-y}Nb{sub y}){sub 4}O{sub 11} solid solution: A tunable band gap spanning the visible-light wavelengths  

SciTech Connect

The new solid-solution NaCu(Ta{sub 1-y}Nb{sub y}){sub 4}O{sub 11} (0{<=}y{<=}0.7) was synthesized by solid-state methods in the form of bulk powders that ranged from light-yellow to brown colored and were characterized by powder X-ray diffraction techniques (Space group R-3c (no. 167); Z=6; a=6.214(1)-6.218(1) Angstrom-Sign and c=36.86(1)-36.94(1) Angstrom-Sign ). Full-profile Rietveld refinements confirmed a site-differentiated ordering of the Cu(I) and Na cations, i.e., occupying the 12c (linear environment) and 18d (seven-coordinate environment) crystallographic sites respectively. Conversely, a statistical mixture of Ta(V) and Nb(V) cations occurred over the 6b (octahedral environment) or the 18e (pentagonal-bipyramidal environment) crystallographic sites, without any preferential segregation. The UV-Vis diffuse reflectance spectra showed a significant red-shift of the optical bandgap size (indirect) from {approx}2.70 eV to {approx}1.80 eV across the solid solution with increasing Nb(V) content. Electronic-structure calculations using the tight-binding linear-muffin-tin-orbital approach showed that the reduction in bandgap size arises from the introduction of the lower-energy Nb 4d{sup 0} orbitals into the conduction band and consequently a lower energy of the conduction band edge. The lowest-energy bandgap transitions were found to be derived from electronic transitions between the filled Cu(I) and the empty Nb(V) d-orbitals, with a small amount of mixing with the O 2p orbitals. The resulting conduction and valence band energies are found to approximately bracket the redox potentials for water reduction and oxidation, and meeting the thermodynamic requirements for photocatalytic water-splitting reactions. - Graphical Abstract: The NaCu(Ta{sub 1-y}Nb{sub y}){sub 4}O{sub 11} (0{<=}y{<=}0.7) solid solution shows a statistical occupancy of the Ta(V) and Nb(V) cations in both octahedral and pentagonal bipyramidal environments. An increasing Nb(V) content also causes a significant red-shift of the bandgap size from {approx}2.70 eV to {approx}1.80 eV. Highlights: Black-Right-Pointing-Pointer Double solid-solution of M(I) (=Cu, Na) and M(V) (=Nb, Ta) crystallographic sites. Black-Right-Pointing-Pointer Increasing Nb content leads to tunable bandgap size from {approx}2.70 eV to {approx}1.80 eV across the solid solution. Black-Right-Pointing-Pointer Layers of MO{sub 7} (M=Ta, Nb) pentagonal bipyramids and isolated MO{sub 6} octahedra.

Palasyuk, Olena [Department of Chemistry, North Carolina State University, Raleigh, NC 27695 (United States); Maggard, Paul A., E-mail: Paul_Maggard@ncsu.edu [Department of Chemistry, North Carolina State University, Raleigh, NC 27695 (United States)

2012-07-15T23:59:59.000Z

99

Chalcogenide Glass Radiation Sensor; Materials Development, Design and Device Testing  

SciTech Connect

For many decades, various radiation detecting material have been extensively researched, to find a better material or mechanism for radiation sensing. Recently, there is a growing need for a smaller and effective material or device that can perform similar functions of bulkier Geiger counters and other measurement options, which fail the requirement for easy, cheap and accurate radiation dose measurement. Here arises the use of thin film chalcogenide glass, which has unique properties of high thermal stability along with high sensitivity towards short wavelength radiation. The unique properties of chalcogenide glasses are attributed to the lone pair p-shell electrons, which provide some distinctive optical properties when compared to crystalline material. These qualities are derived from the energy band diagram and the presence of localized states in the band gap. Chalcogenide glasses have band tail states and localized states, along with the two band states. These extra states are primarily due to the lone pair electrons as well as the amorphous structure of the glasses. The localized states between the conductance band (CB) and valence band (VB) are primarily due to the presence of the lone pair electrons, while the band tail states are attributed to the Van der Waalâ??s forces between layers of atoms [1]. Localized states are trap locations within the band gap where electrons from the valence band can hop into, in their path towards the conduction band. Tail states on the other hand are locations near the band gap edges and are known as Urbach tail states (Eu). These states are occupied with many electrons that can participate in the various transformations due to interaction with photons. According to Y. Utsugi et. al.[2], the electron-phonon interactions are responsible for the generation of the Urbach tails. These states are responsible for setting the absorption edge for these glasses and photons with energy near the band gap affect these states. We have studied the effect of x-rays and γ-rays, on thin film chalcogenide glasses and applied them in conjunction with film incorporating a silver source in a new type of radiation sensor for which we have an US patent application [3]. In this report, we give data about our studies regarding our designed radiation sensor along with the testing and performance at various radiation doses. These studies have been preceded by materials characterization research related to the compositional and structural characteristics of the active materials used in the radiation sensor design. During the work on the project, we collected a large volume of material since every experiment was repeated many times to verify the results. We conducted a comprehensive material research, analysis and discussion with the aim to understand the nature of the occurring effects, design different structures to harness these effects, generated models to aid in the understanding the effects, built different device structures and collected data to quantify device performance. These various aspects of our investigation have been detailed in previous quarterly reports. In this report, we present our main results and emphasize on the results pertaining to the core project goals â?? materials development, sensor design and testing and with an emphasis on classifying the appropriate material and design for the optimal application. The report has three main parts: (i) Presentation of the main data; (ii) Bulleted summary of the most important results; (iii) List of the patent, journal publications, conference proceedings and conferences participation, occurring as a result of working on the project.

Mitkova, Maria; Butt, Darryl; Kozicki, Michael; Barnaby, Hugo

2013-04-30T23:59:59.000Z

100

Equivalent Circuit Description of Non-compensated n-p Codoped TiO2 as Intermediate Band Solar Cells  

E-Print Network (OSTI)

The novel concept of non-compensated n-p codoping has made it possible to create tunable intermediate bands in the intrinsic band gap of TiO2, making the codoped TiO2 a promising material for developing intermediate band solar cells (IBSCs). Here we investigate the quantum efficiency of such IBSCs within two scenarios - with and without current extracted from the extended intermediate band. Using the ideal equivalent circuit model, we find that the maximum efficiency of 57% in the first scenario and 53% in the second are both much higher than the Shockley-Queisser limit from single gap solar cells. We also obtain various key quantities of the circuits, a useful step in realistic development of TiO2 based solar cells invoking device integration. These equivalent circuit results are also compared with the efficiencies obtained directly from consideration of electron transition between the energy bands, and both approaches reveal the intriguing existence of double peaks in the maximum quantum efficiency as a function of the relative location of IBs.

Tian-Li Feng; Guang-Wei Deng; Yi Xia; Feng-Cheng Wu; Ping Cui; Hai-Ping Lan; Zhen-Yu Zhang

2010-12-08T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

VUV absorption spectroscopy measurements of the role of fast neutral atoms in high-power gap breakdown  

DOE Green Energy (OSTI)

The maximum power achieved in a wide variety of high-power devices, including electron and ion diodes, z pinches, and microwave generators, is presently limited by anode-cathode gap breakdown. A frequently-discussed hypothesis for this effect is ionization of fast neutral atoms injected throughout the anode-cathode gap during the power pulse. The authors describe a newly-developed diagnostic tool that provides the first direct test of this hypothesis. Time-resolved vacuum-ultraviolet absorption spectroscopy is used to directly probe fast neutral atoms with 1 mm spatial resolution in the 10 mm anode-cathode gap of the SABRE 5 MV, 1 TW applied-B ion diode. Absorption spectra collected during Ar RF glow discharges and with CO{sub 2} gas fills confirm the reliability of the diagnostic technique. Throughout the 50--100 ns ion diode pulses no measurable neutral absorption is seen, setting upper limits of 0.12--1.5 x 10{sup 14} cm{sup {minus}3} for ground state fast neutral atom densities of H, C, N, O, F. The absence of molecular absorption bands also sets upper limits of 0.16--1.2 x 10{sup 15} cm{sup {minus}3} for common simple molecules. These limits are low enough to rule out ionization throughout the gap as a breakdown mechanism. This technique can now be applied to quantify the role of neutral atoms in other high-power devices.

FILUK,A.B.; BAILEY,JAMES E.; CUNEO,MICHAEL E.; LAKE,PATRICK WAYNE; NASH,THOMAS J.; NOACK,DONALD D.; MARON,Y.

2000-03-20T23:59:59.000Z

102

Inertial energy storage device  

DOE Patents (OSTI)

The inertial energy storage device of the present invention comprises a composite ring formed of circumferentially wound resin-impregnated filament material, a flanged hollow metal hub concentrically disposed in the ring, and a plurality of discrete filament bandsets coupling the hub to the ring. Each bandset is formed of a pair of parallel bands affixed to the hub in a spaced apart relationship with the axis of rotation of the hub being disposed between the bands and with each band being in the configuration of a hoop extending about the ring along a chordal plane thereof. The bandsets are disposed in an angular relationship with one another so as to encircle the ring at spaced-apart circumferential locations while being disposed in an overlapping relationship on the flanges of the hub. The energy storage device of the present invention has the capability of substantial energy storage due to the relationship of the filament bands to the ring and the flanged hub.

Knight, Jr., Charles E. (Knoxville, TN); Kelly, James J. (Oak Ridge, TN); Pollard, Roy E. (Powell, TN)

1978-01-01T23:59:59.000Z

103

Diluted II-VI Oxide Semiconductors with Multiple Band Gaps  

energy spectrum, Zn 1 yMn yO xTe 1 x is a material perfectly satisfying the conditions for single-junction ... conduction states of the matrix are clearly observed in

104

A 250 GHz photonic band gap gyrotron amplifier  

E-Print Network (OSTI)

This thesis reports the theoretical and experimental investigation of a novel gyrotron traveling-wave-tube (TWT) amplifier at 250 GHz. The gyrotron amplifier designed and tested in this thesis has achieved a peak small ...

Nanni, Emilio A. (Emilio Alessandro)

2013-01-01T23:59:59.000Z

105

Incorporation of Furan into Low Band-Gap Polymers for ...  

and Departments of Chemistry and Chemical Engineering, UniVersity of California, Berkeley, California 94720-1460, United States

106

Special purpose modes in photonic band gap fibers - Energy ...  

Solar Thermal; Startup ... Partners (27) Visual Patent Search; Success Stories; News; Events; Special purpose modes in ... Issued: April 2, 2013: ...

107

Experimental study of photonic band gap accelerator structures  

E-Print Network (OSTI)

This thesis reports theoretical and experimental research on a novel accelerator concept using a photonic bandgap (PBG) structure. Major advances in higher order mode (HOM) damping are required for the next generation of ...

Marsh, Roark A

2009-01-01T23:59:59.000Z

108

Method for Creating Photonic Band Gap Materials - Energy ...  

Innovative microstructures that can direct light in a manner similar to the way semiconductors can influence electrons can be produced by creating what is termed a ...

109

Opals, Photonic Band Gap Materials, Pleochroic Refraction, and ...  

Science Conference Proceedings (OSTI)

Improved Performance of a Fluorescent Blue Organic Light Emitting Diode with Hole Blocking Materials as Dopants for Transport Layers · Luminescence of the ...

110

Band Gap Optimization of Two-Dimensional Photonic Crystals Using ...  

E-Print Network (OSTI)

Jul 10, 2009 ... Due to the lack of fundamental length scale in Maxwell's equations, it can be shown that the magnitude of the ...... quantum chemistry. In Proceedings of the ... Handbook of semidefinite programming: theory, algorithms, and ...

111

Diluted II-VI Oxide Semiconductors with Multiple Band Gaps  

energy spectrum, Zn 1 yMn yO xTe 1 x is a material perfectly satisfying the conditions for single-junction ... conduction states of the matrix are ...

112

Flow through Discovery Gap  

Science Conference Proceedings (OSTI)

A narrow gap (Discovery Gap) in the East Azores Fracture Zone at 37°N in the eastern Atlantic provides a channel for the exchange of bottom water between the Madeira and Iberian abyssal basins. A detailed survey defines its length (150 km), width ...

P. M. Saunders

1987-05-01T23:59:59.000Z

113

Measuring Devices  

Science Conference Proceedings (OSTI)

... Compressed Natural Gas Retail Motor-Fuel Dispensers; Hydrogen Measuring Devices; Liquefied Petroleum Gas Liquid-Measuring Devices; Loading ...

2010-10-05T23:59:59.000Z

114

ISM band to U-NII band frequency transverter and method of frequency transversion  

DOE Patents (OSTI)

A frequency transverter (10) and method for enabling bi-frequency dual-directional transfer of digitally encoded data on an RF carrier by translating between a crowded or otherwise undesirable first frequency band, such as the 2.4 GHz ISM band, and a less-crowded or otherwise desirable second frequency band, such as the 5.0 GHz 6.0 GHz U-NII band. In a preferred embodiment, the transverter (10) connects between an existing data radio (11) and its existing antenna (30), and comprises a bandswitch (12); an input RF isolating device (14); a transmuter (16); a converter (18); a dual output local oscillator (20); an output RF isolating device (22); and an antenna (24) tuned to the second frequency band. The bandswitch (12) allows for bypassing the transverter (10), thereby facilitating its use with legacy systems. The transmuter (14) and converter (16) are adapted to convert to and from, respectively, the second frequency band.

Stepp, Jeffrey David (Grandview, MO); Hensley, Dale (Grandview, MO)

2006-09-12T23:59:59.000Z

115

ISM band to U-NII band frequency transverter and method of frequency transversion  

DOE Patents (OSTI)

A frequency transverter (10) and method for enabling bi-frequency dual-directional transfer of digitally encoded data on an RF carrier by translating between a crowded or otherwise undesirable first frequency band, such as the 2.4 GHz ISM band, and a less-crowded or otherwise desirable second frequency band, such as the 5.0 GHz-6.0 GHz U-NII band. In a preferred embodiment, the transverter (10) connects between an existing data radio (11) and its existing antenna (30), and comprises a bandswitch (12); an input RF isolating device (14); a transmuter (16); a converter (18); a dual output local oscillator (20); an output RF isolating device (22); and an antenna (24) tuned to the second frequency band. The bandswitch (12) allows for bypassing the transverter (10), thereby facilitating its use with legacy systems. The transmuter (14) and converter (16) are adapted to convert to and from, respectively, the second frequency band.

Stepp, Jeffrey David (Grandview, MO); Hensley, Dale (Grandview, MO)

2006-04-04T23:59:59.000Z

116

Fiber optic gap gauge  

DOE Patents (OSTI)

A lightweight, small size, high sensitivity gauge for indirectly measuring displacement or absolute gap width by measuring axial strain in an orthogonal direction to the displacement/gap width. The gap gauge includes a preferably titanium base having a central tension bar with springs connecting opposite ends of the tension bar to a pair of end connector bars, and an elongated bow spring connected to the end connector bars with a middle section bowed away from the base to define a gap. The bow spring is capable of producing an axial strain in the base proportional to a displacement of the middle section in a direction orthogonal to the base. And a strain sensor, such as a Fabry-Perot interferometer strain sensor, is connected to measure the axial strain in the base, so that the displacement of the middle section may be indirectly determined from the measurement of the axial strain in the base.

Wood, Billy E. (Livermore, CA); Groves, Scott E. (Brentwood, CA); Larsen, Greg J. (Brentwood, CA); Sanchez, Roberto J. (Pleasanton, CA)

2006-11-14T23:59:59.000Z

117

Inception report and Gap analysis  

E-Print Network (OSTI)

Inception report and Gap analysis Boiler inspection Riga, June 2004 #12;Inception report and gap analysis ­ boiler inspection Table of Content 1 INTRODUCTION ................................................................................................................................. 3 2 BOILER INSTALLATIONS ­ GAP ANALYSIS

118

Co-Evaporated Cu2ZnSnSe4 Films and Devices  

DOE Green Energy (OSTI)

The use of vacuum co-evaporation to produce Cu2ZnSnSe4 photovoltaic devices with 9.15% total-area efficiency is described. These new results suggest that the early success of the atmospheric techniques for kesterite photovoltaics may be related to the ease with which one can control film composition and volatile phases, rather than a fundamental benefit of atmospheric conditions for film properties. The co-evaporation growth recipe is documented, as is the motivation for various features of the recipe. Characteristics of the resulting kesterite films and devices are shown in scanning electron micrographs, including photoluminescence, current-voltage, and quantum efficiency. Current-voltage curves demonstrate low series resistance without the light-dark cross-over seen in many devices in the literature. Band gap indicated by quantum efficiency and photoluminescence is roughly consistent with that expected from first principles calculation.

Repins, I.; Beall, C.; Vora, N.; DeHart, C.; Kuciauskas, D.; Dippo, P.; To, B.; Mann, J.; Hsu, W. C.; Goodrich, A.; Noufi, R.

2012-06-01T23:59:59.000Z

119

Windy Gap Firming Project  

NLE Websites -- All DOE Office Websites (Extended Search)

Windy Gap Firming Project Windy Gap Firming Project Skip Navigation Links Transmission Functions Infrastructure projects Interconnection OASIS OATT Windy Gap Firming Project, Final Environmental Impact Statement, DOE/EIS-0370 (cooperating agency) Western's proposed action is to relocate approximately 3.8 miles of the existing Estes to Lyons 115-kilovolt transmission line, if the Chimney Hollow Reservoir alternative is constructed. The line would be moved outside the area proposed for the reservoir, and Western would ensure the new location would allow the agency to continue to operate and maintain it. Section 2.4.1.4 of the Final Environmental Impact Statement, Volume 1 provides more information on the transmission line relocation proposal. The U.S. Department of the Interior, Bureau of Reclamation is the Lead Agency for the National Environmental Policy Act Review. Cooperating agencies are Western, the U.S. Army Corps of Engineers and Grand County, Colo.

120

Uncertainties in Gapped Graphene  

E-Print Network (OSTI)

Motivated by graphene-based quantum computer we examine the time-dependence of the position-momentum and position-velocity uncertainties in the monolayer gapped graphene. The effect of the energy gap to the uncertainties is shown to appear via the Compton-like wavelength $\\lambda_c$. The uncertainties in the graphene are mainly contributed by two phenomena, spreading and zitterbewegung. While the former determines the uncertainties in the long-range of time, the latter gives the highly oscillation to the uncertainties in the short-range of time. The uncertainties in the graphene are compared with the corresponding values for the usual free Hamiltonian $\\hat{H}_{free} = (p_1^2 + p_2^2) / 2 M$. It is shown that the uncertainties can be under control within the quantum mechanical law if one can choose the gap parameter $\\lambda_c$ freely.

Eylee Jung; Kwang S. Kim; DaeKil Park

2011-07-27T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Colorado Gap Analysis  

NLE Websites -- All DOE Office Websites (Extended Search)

Colorado Gap Analysis Colorado Gap Analysis 2 The Building Codes Assistance Project (BCAP) BCAP is a non-profit advocacy organization established in 1994 as a joint initiative of the Alliance to Save Energy, the American Council for an Energy-Efficient Economy, and the Natural Resources Defense Council. BCAP focuses on providing state and local governments in the U.S., as well as stakeholder organizations, with support on code adoption and implementation through direct assistance, research, data analysis, and coordination with other activities and allies. With over sixteen years of experience supporting numerous state energy offices and city building departments, along with tracking code activities across the country, BCAP is well-positioned to assist in local and statewide activity to advance

122

Stress testing on silicon carbide electronic devices for prognostics and health management.  

SciTech Connect

Power conversion systems for energy storage and other distributed energy resource applications are among the drivers of the important role that power electronics plays in providing reliable electricity. Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) will help increase the performance and efficiency of power electronic equipment while condition monitoring (CM) and prognostics and health management (PHM) will increase the operational availability of the equipment and thereby make it more cost effective. Voltage and/or temperature stress testing were performed on a number of SiC devices in order to accelerate failure modes and to identify measureable shifts in electrical characteristics which may provide early indication of those failures. Those shifts can be interpreted and modeled to provide prognostic signatures for use in CM and/or PHM. Such experiments will also lead to a deeper understanding of basic device physics and the degradation mechanisms behind failure.

Kaplar, Robert James; Brock, Reinhard C.; Marinella, Matthew; King, Michael Patrick; Smith, Mark A.; Atcitty, Stanley

2011-01-01T23:59:59.000Z

123

Tunable nanometer electrode gaps by MeV ion irradiation  

Science Conference Proceedings (OSTI)

We report the use of MeV ion-irradiation-induced plastic deformation of amorphous materials to fabricate electrodes with nanometer-sized gaps. Plastic deformation of the amorphous metal Pd{sub 80}Si{sub 20} is induced by 4.64 MeV O{sup 2+} ion irradiation, allowing the complete closing of a sub-micrometer gap. We measure the evolving gap size in situ by monitoring the field emission current-voltage (I-V) characteristics between electrodes. The I-V behavior is consistent with Fowler-Nordheim tunneling. We show that using feedback control on this signal permits gap size fabrication with atomic-scale precision. We expect this approach to nanogap fabrication will enable the practical realization of single molecule controlled devices and sensors.

Cheang-Wong, J.-C.; Narumi, K.; Schuermann, G. M. [Department of Physics, Harvard University, Cambridge, Massachusetts 02138 (United States); Aziz, M. J. [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Golovchenko, J. A. [Department of Physics, Harvard University, Cambridge, Massachusetts 02138 (United States); School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)

2012-04-09T23:59:59.000Z

124

GenII Gap Analysis  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GENII-Gap Analysis GENII-Gap Analysis Defense Nuclear Facilities Safety Board Recommendation 2002-1 Software Quality Assurance Improvement Plan Commitment 4.2.1.3: Software Quality Assurance Improvement Plan: GENII Gap Analysis Final Report U.S. Department of Energy Office of Environment, Safety, and Health 1000 Independence Ave., S.W. Washington, DC 20585-2040 May 2004 GENII Gap Analysis May 2004 Final Report INTENTIONALLY BLANK ii GENII Gap Analysis May 2004 Final Report FOREWORD This document provides an evaluation of the Software Quality Assurance (SQA) attributes of GENII, a radiological dispersion computer code, relative to established requirements. This evaluation, a "gap analysis", is performed to meet commitment 4.2.1.3 of the Department of

125

MACCS2 Final Gap Analysis  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MACCS2-Gap Analysis MACCS2-Gap Analysis Defense Nuclear Facilities Safety Board Recommendation 2002-1 Software Quality Assurance Improvement Plan Commitment 4.2.1.3: Software Quality Assurance Improvement Plan: MACCS2 Gap Analysis Final Report U.S. Department of Energy Office of Environment, Safety and Health 1000 Independence Ave., S.W. Washington, DC 20585-2040 May 2004 MACCS2 Gap Analysis May 2004 Final Report INTENTIONALLY BLANK ii MACCS2 Gap Analysis May 2004 Final Report FOREWORD This report documents the outcome of an evaluation of the Software Quality Assurance (SQA) attributes of the radiological dispersion computer code, MACCS2, relative to established software requirements. This evaluation, a "gap analysis", is performed to meet commitment 4.2.1.3 of the

126

Electrochromic devices  

DOE Patents (OSTI)

An electrochromic device is disclosed having a selective ion transport layer which separates an electrochemically active material from an electrolyte containing a redox active material. The devices are particularly useful as large area architectural and automotive glazings due to there reduced back reaction.

Allemand, Pierre M. (Tucson, AZ); Grimes, Randall F. (Ann Arbor, MI); Ingle, Andrew R. (Tucson, AZ); Cronin, John P. (Tucson, AZ); Kennedy, Steve R. (Tuscon, AZ); Agrawal, Anoop (Tucson, AZ); Boulton, Jonathan M. (Tucson, AZ)

2001-01-01T23:59:59.000Z

127

Fusion devices  

SciTech Connect

Three types of thermonuclear fusion devices currently under development are reviewed for an electric utilities management audience. Overall design features of laser fusion, tokamak, and magnetic mirror type reactors are described and illustrated. Thrusts and trends in current research on these devices that promise to improve performance are briefly reviewed. Twenty photographs and drawings are included. (RME)

Fowler, T.K.

1977-10-11T23:59:59.000Z

128

Strain tuning of topological band order in cubic semiconductors  

SciTech Connect

We theoretically explore the possibility of tuning the topological order of cubic diamond/zinc-blende semi- conductors with external strain. Based on a simple tight-binding model, we analyze the evolution of the cubic semiconductor band structure under hydrostatic or biaxial lattice expansion, by which a generic guiding princi- ple is established that biaxial lattice expansion can induce a topological phase transition of small band-gap cubic semiconductors via a band inversion and symmetry breaking at point. Using density functional theory cal- culations, we demonstrate that a prototype topological trivial semiconductor, InSb, is converted to a nontrivial topological semiconductor with a 2% 3% biaxial lattice expansion.

Feng, wanxiang [Chinese Academy of Sciences; Zhu, Wenguang [University of Tennessee, Knoxville (UTK); Weitering, Hanno [University of Tennessee, Knoxville (UTK); Stocks, George Malcolm [ORNL; Yao, yugui [Chinese Academy of Sciences; Xiao, Di [ORNL

2012-01-01T23:59:59.000Z

129

Superconductive devices  

Science Conference Proceedings (OSTI)

Over the past 2 years there have been several suggestions advanced for computer devices which utilize the unique properties of superconductors. Some of these take advantage of the strong nonlinear dependence of resistance on magnetic field which makes ...

Albert E. Slade; Howard McMahon

1958-05-01T23:59:59.000Z

130

Device Performance  

DOE Green Energy (OSTI)

In the Device Performance group, within the National Center for Photovoltaic's Measurements and Characterization Division, we measure the performance of PV cells and modules with respect to standard reporting conditions--defined as a reference temperature (25 C), total irradiance (1000 Wm-2), and spectral irradiance distribution (IEC standard 60904-3). Typically, these are ''global'' reference conditions, but we can measure with respect to any reference set. To determine device performance, we conduct two general categories of measurements: spectral responsivity (SR) and current versus voltage (I-V). We usually perform these measurements using standard procedures, but we develop new procedures when required by new technologies. We also serve as an independent facility for verifying device performance for the entire PV community. We help the PV community solve its special measurement problems, giving advice on solar simulation, instrumentation for I-V measurements, reference cells, measurement procedures, and anomalous results. And we collaborate with researchers to analyze devices and materials.

Not Available

2006-06-01T23:59:59.000Z

131

Band anticrossing effects in highly mismatched semiconductor alloys  

DOE Green Energy (OSTI)

The first five chapters of this thesis focus on studies of band anticrossing (BAC) effects in highly electronegativity- mismatched semiconductor alloys. The concept of bandgap bowing has been used to describe the deviation of the alloy bandgap from a linear interpolation. Bowing parameters as large as 2.5 eV (for ZnSTe) and close to zero (for AlGaAs and ZnSSe) have been observed experimentally. Recent advances in thin film deposition techniques have allowed the growth of semiconductor alloys composed of significantly different constituents with ever- improving crystalline quality (e.g., GaAs{sub 1-x}N{sub x} and GaP{sub 1-x}N{sub x} with x {approx}< 0.05). These alloys exhibit many novel and interesting properties including, in particular, a giant bandgap bowing (bowing parameters > 14 eV). A band anticrossing model has been developed to explain these properties. The model shows that the predominant bowing mechanism in these systems is driven by the anticrossing interaction between the localized level associated with the minority component and the band states of the host. In this thesis I discuss my studies of the BAC effects in these highly mismatched semiconductors. It will be shown that the results of the physically intuitive BAC model can be derived from the Hamiltonian of the many-impurity Anderson model. The band restructuring caused by the BAC interaction is responsible for a series of experimental observations such as a large bandgap reduction, an enhancement of the electron effective mass, and a decrease in the pressure coefficient of the fundamental gap energy. Results of further experimental investigations of the optical properties of quantum wells based on these materials will be also presented. It will be shown that the BAC interaction occurs not only between localized states and conduction band states at the Brillouin zone center, but also exists over all of k-space. Finally, taking ZnSTe and ZnSeTe as examples, I show that BAC also occurs between localized states and the valence band states. Soft x-ray fluorescence experiments provide direct evidence of the BAC interaction in these systems. In the final chapter of the thesis, I describe and summarize my studies of optical properties of wurtzite InN and related alloys. Early studies performed on InN films grown by sputtering techniques suggested a direct bandgap of {approx}1.9 eV for this semiconductor. Very recently, high-quality InN films with much higher mobility have become available by using the molecular beam epitaxy growth method. Optical experiments carried out on these samples reveal a narrow bandgap for InN of 0.77 eV, much lower than the previously accepted value. Optical properties of InGaN and InAlN ternaries on the In rich side have also been characterized and are found to be consistent with the narrow bandgap of InN. The bandgap bowing parameters in these alloys were determined. In the context of these findings, the bandgap energies of InGaN and InAlN were found to cover a wide spectral range from the infrared for InN to the ultraviolet for GaN and deep ultraviolet for AlN. The significance of this work is rooted in many important applications of nitride semiconductors in optoelectronics and solar energy conversion devices.

Wu, Junqiao

2002-09-09T23:59:59.000Z

132

Plasma jet ignition device  

DOE Patents (OSTI)

An ignition device of the plasma jet type is disclosed. The device has a cylindrical cavity formed in insulating material with an electrode at one end. The other end of the cylindrical cavity is closed by a metal plate with a small orifice in the center which plate serves as a second electrode. An arc jumping between the first electrode and the orifice plate causes the formation of a highly-ionized plasma in the cavity which is ejected through the orifice into the engine cylinder area to ignite the main fuel mixture. Two improvements are disclosed to enhance the operation of the device and the length of the plasma plume. One improvement is a metal hydride ring which is inserted in the cavity next to the first electrode. During operation, the high temperature in the cavity and the highly excited nature of the plasma breaks down the metal hydride, liberating hydrogen which acts as an additional fuel to help plasma formation. A second improvement consists of a cavity insert containing a plurality of spaced, metal rings. The rings act as secondary spark gap electrodes reducing the voltage needed to maintain the initial arc in the cavity.

McIlwain, Michael E. (Franklin, MA); Grant, Jonathan F. (Wayland, MA); Golenko, Zsolt (North Reading, MA); Wittstein, Alan D. (Fairfield, CT)

1985-01-15T23:59:59.000Z

133

Multiband semiconductor compositions for photovoltaic devices  

DOE Patents (OSTI)

The highly mismatched alloy Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x, 0.ltoreq.y<1 and 0band of extended states located within the band gap of the Zn.sub.1-yMn.sub.yTe host. With multiple band gaps that fall within the solar energy spectrum, Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

Walukiewicz, Wladyslaw (Kensington, CA); Yu, Kin Man (Lafayette, CA); Wu, Junqiao (Belmont, MA)

2012-03-06T23:59:59.000Z

134

PLASMA DEVICE  

DOE Patents (OSTI)

A device for producing a confined high temperature plasma is described. In the device the concave inner surface of an outer annular electrode is disposed concentrically about and facing the convex outer face of an inner annular electrode across which electrodes a high potential is applied to produce an electric field there between. Means is provided to create a magnetic field perpendicular to the electric field and a gas is supplied at reduced pressure in the area therebetween. Upon application of the high potential, the gas between the electrodes is ionized, heated, and under the influence of the electric and magnetic fields there is produced a rotating annular plasma disk. The ionized plasma has high dielectric constant properties. The device is useful as a fast discharge rate capacitor, in controlled thermonuclear research, and other high temperature gas applications. (AEC)

Baker, W.R.; Brathenahl, A.; Furth, H.P.

1962-04-10T23:59:59.000Z

135

Electrochemical device  

DOE Patents (OSTI)

A tunnel protected electrochemical device features channels fluidically communicating between manifold, tunnels and cells. The channels are designed to provide the most efficient use of auxiliary power. The channels have a greater hydraulic pressure drop and electrical resistance than the manifold. This will provide a design with the optimum auxiliary energy requirements.

Grimes, Patrick G. (Westfield, NJ); Einstein, Harry (Springfield, NJ); Bellows, Richard J. (Westfield, NJ)

1988-01-12T23:59:59.000Z

136

Detection device  

DOE Patents (OSTI)

The present invention is directed to a detection device comprising: (1) an entrance chamber; (2) a central chamber; and (3) an exit chamber. The central chamber includes an ionizing gas, anode, and means for connecting the anode with an external power supply and pulse counter.

Smith, J.E.

1981-02-27T23:59:59.000Z

137

A Method to Improve Voltage Holding Across Vacuum Electrical Gaps to  

NLE Websites -- All DOE Office Websites (Extended Search)

A Method to Improve Voltage Holding Across Vacuum Electrical Gaps to A Method to Improve Voltage Holding Across Vacuum Electrical Gaps to Improve the Performance and Reduce the Conditioning Time by Removing Bacteria, Fungi, and Other Microbial Organisms and Their Spores. -- . Inventor Larry Grisham. Disclosed is a method to potentially increase the performance of devices which employ electric field within a vacuum by increasing the magnitude of the electric field gradient which can be sustained, the reliability of the devices, and by reducing the conditioning time of devices such as charged particle accelerators when they are brought into operation. The disclosed method can be employed, for example, for devices requiring voltages across vacuum gaps, such as, but not limited to, charged particle accelerators, X-ray machines, vacuum tubes, and vacuum electrical breakers.

138

Broad Band Photon Harvesting Biomolecules for Photovoltaics  

E-Print Network (OSTI)

We discuss the key principles of artificial photosynthesis for photovoltaic energy conversion. We demonstrate these principles by examining the operation of the so-called "dye sensitized solar cell" (DSSC) - a photoelectrochemical device which simulates the charge separation process across a nano-structured membrane that is characteristic of natural systems. These type of devices have great potential to challenge silicon semiconductor technology in the low cost, medium efficiency segment of the PV market. Ruthenium charge transfer complexes are currently used as the photon harvesting components in DSSCs. They produce a relatively broad band UV and visible response, but have long term stability problems and are expensive to manufacture. We suggest that a class of biological macromolecules called the melanins may be suitable replacements for the ruthenium complexes. They have strong, broad band absorption, are chemically and photochemically very stable, can be cheaply and easily synthesized, and are also bio-available and bio-compatible. We demonstrate a melanin-based regenerative solar cell, and discuss the key properties that are necessary for an effective broad band photon harvesting system.

P. Meredith; B. J. Powell; J. Riesz; R. Vogel; D. Blake; I. Kartini; G. Will; S. Subianto

2004-06-04T23:59:59.000Z

139

Laser device  

DOE Patents (OSTI)

A laser device includes a virtual source configured to aim laser energy that originates from a true source. The virtual source has a vertical rotational axis during vertical motion of the virtual source and the vertical axis passes through an exit point from which the laser energy emanates independent of virtual source position. The emanating laser energy is collinear with an orientation line. The laser device includes a virtual source manipulation mechanism that positions the virtual source. The manipulation mechanism has a center of lateral pivot approximately coincident with a lateral index and a center of vertical pivot approximately coincident with a vertical index. The vertical index and lateral index intersect at an index origin. The virtual source and manipulation mechanism auto align the orientation line through the index origin during virtual source motion.

Scott, Jill R. (Idaho Falls, ID); Tremblay, Paul L. (Idaho Falls, ID)

2008-08-19T23:59:59.000Z

140

LOADING DEVICE  

DOE Patents (OSTI)

A device is presented for loading or charging bodies of fissionable material into a reactor. This device consists of a car, mounted on tracks, into which the fissionable materials may be placed at a remote area, transported to the reactor, and inserted without danger to the operating personnel. The car has mounted on it a heavily shielded magazine for holding a number of the radioactive bodies. The magazine is of a U-shaped configuration and is inclined to the horizontal plane, with a cap covering the elevated open end, and a remotely operated plunger at the lower, closed end. After the fissionable bodies are loaded in the magazine and transported to the reactor, the plunger inserts the body at the lower end of the magazine into the reactor, then is withdrawn, thereby allowing gravity to roll the remaining bodies into position for successive loading in a similar manner.

Ohlinger, L.A.

1958-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Dynamically generated flat-band phases in optical kagome lattices  

E-Print Network (OSTI)

We suggest that a dynamically generated flat-band insulator can be realized using ultracold fermions loaded in an optical kagome lattice by depleting the mobile atoms at one edge of the lattice with a focused laser beam. Since the flat band of the kagome lattice is a high-energy one compared to the dispersive bands, this dynamically generated flat-band insulator is a population-inversion phase with no pumping required to maintain it after its formation. We also show that in a similar setup a dynamical stripe phase emerges in the flat band when two-component fermions with weakly repulsive interactions evolve in a static kagome lattice or even in the absence of interactions when the optical lattice is modulated. Given the broad variety of lattice geometries supporting frustration-induced localized states, our work opens the door to atomtronic devices utilizing geometrical effects and offers new insight on the dynamics of geometrically frustrated systems.

Gia-Wei Chern; Chih-Chun Chien; Massimiliano Di Ventra

2013-07-23T23:59:59.000Z

142

Field-induced Gap and Quantized Charge Pumping in Nano-helix  

SciTech Connect

We propose several novel physical phenomena based on nano-scale helical wires. Applying a static electric field transverse to the helical wire induces a metal to insulator transition, with the band gap determined by the applied voltage. Similar idea can be applied to 'geometrically' constructing one-dimensional systems with arbitrary external potential. With a quadrupolar electrode configuration, the electric field could rotate in the transverse plane, leading to a quantized dc charge current proportional to the frequency of the rotation. Such a device could be used as a new standard for the high precession measurement of the electric current. The inverse effect implies that passing an electric current through a helical wire in the presence of a transverse static electric field can lead to a mechanical rotation of the helix. This effect can be used to construct nano-scale electro-mechanical motors. Finally, our methodology also enables new ways of controlling and measuring the electronic properties of helical biological molecules such as the DNA.

Qi, Xiao-Liang; /Stanford U., Phys. Dept. /Tsinghua U., Beijing; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-02-15T23:59:59.000Z

143

Bridging Gaps | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Bridging Gaps Bridging Gaps Bridging Gaps Analysis to identify issues, best practices, and recommendations Implementation of modernization, infrastructure planning, and sustainability efforts Evaluation of planning practices to develop an adaptable method that considers revitalization and reuse Analysis of issues with transfers at less than fair market value and recommendations for improvement Evaluation of the Ten-Year (25-year) Site Plans for revitalization and strategic planning interests Tools to be incorporated into programmatic business models and processes Best-practices guide for energy projects Guidance and recommendations to improve the 10 CFR 770 process and less-than-fair-market-value transfers Tools/checklist to evaluate assets for reuse as part of planning

144

Elliptically polarizing adjustable phase insertion device  

DOE Patents (OSTI)

An insertion device for extracting polarized electromagnetic energy from a beam of particles is disclosed. The insertion device includes four linear arrays of magnets which are aligned with the particle beam. The magnetic field strength to which the particles are subjected is adjusted by altering the relative alignment of the arrays in a direction parallel to that of the particle beam. Both the energy and polarization of the extracted energy may be varied by moving the relevant arrays parallel to the beam direction. The present invention requires a substantially simpler and more economical superstructure than insertion devices in which the magnetic field strength is altered by changing the gap between arrays of magnets.

Carr, Roger (Redwood City, CA)

1995-01-01T23:59:59.000Z

145

Electrochromic device  

DOE Patents (OSTI)

An electrochromic device includes a first substrate spaced from a second substrate. A first conductive member is formed over at least a portion of the first substrate. A first electrochromic material is formed over at least a portion of the first conductive member. The first electrochromic material includes an organic material. A second conductive member is formed over at least a portion of the second substrate. A second electrochromic material is formed over at least a portion of the second conductive member. The second electrochromic material includes an inorganic material. An ionic liquid is positioned between the first electrochromic material and the second electrochromic material.

Schwendemanm, Irina G. (Wexford, PA); Polcyn, Adam D. (Pittsburgh, PA); Finley, James J. (Pittsburgh, PA); Boykin, Cheri M. (Kingsport, TN); Knowles, Julianna M. (Apollo, PA)

2011-03-15T23:59:59.000Z

146

Gripping device  

DOE Patents (OSTI)

This invention consists of a gripping device having at least two fingers: one movable finger and at least one stationary finger. The fingers are attached to a support by a collar, the movable finger being pivotally attached. The support carries an air cylinder with a shaft to actuate the movable finger. The movable finger has a wide portion with a slot. On the distal end of the air cylinder's shaft is a travelerthat rides int he slot and, as it does, causes the movable finger to pivot toward and away from the two stationary fingers.

Hapstack, M.

1991-04-08T23:59:59.000Z

147

OLED devices  

DOE Patents (OSTI)

An OLED device having an emission layer formed of an ambipolar phosphine oxide host material and a dopant, a hole transport layer in electrical communication with an anode, an electron transport layer in communication with a cathode, wherein the HOMO energy of the hole transport layer is substantially the same as the HOMO energy of the ambipolar host in the emission layer, and the LUMO energy of the electron transport layer is substantially the same as the LUMO energy of the ambipolar host in the emission layer.

Sapochak, Linda Susan [Arlington, VA; Burrows, Paul Edward [Kennewick, WA; Bimalchandra, Asanga [Richland, WA

2011-02-22T23:59:59.000Z

148

TTRDC - News  

NLE Websites -- All DOE Office Websites (Extended Search)

Hosted Consortium to Address Wide Band Gap Materials for Improved Power Electronics Devices Argonne researchers Ted Bohn and Ann Schlenker participated in the Wide Band Gap...

149

Gap-Leaping Vortical Currents  

Science Conference Proceedings (OSTI)

A one-parameter family of exact solutions describing the bifurcation of a steady two-dimensional current with uniform vorticity near a gap in a thin barrier is found. The unsteady evolution of source-driven flows toward these steady states is ...

N. Robb McDonald; E. R. Johnson

2009-10-01T23:59:59.000Z

150

Multiple input electrode gap controller  

DOE Patents (OSTI)

A method and apparatus for controlling vacuum arc remelting (VAR) furnaces by estimation of electrode gap based on a plurality of secondary estimates derived from furnace outputs. The estimation is preferably performed by Kalman filter. Adaptive gain techniques may be employed, as well as detection of process anomalies such as glows. 17 figs.

Hysinger, C.L.; Beaman, J.J.; Melgaard, D.K.; Williamson, R.L.

1999-07-27T23:59:59.000Z

151

Broad band waveguide spectrometer  

DOE Patents (OSTI)

A spectrometer for analyzing a sample of material utilizing a broad band source of electromagnetic radiation and a detector. The spectrometer employs a waveguide possessing an entry and an exit for the electromagnetic radiation emanating from the source. The waveguide further includes a surface between the entry and exit portions which permits interaction between the electromagnetic radiation passing through the wave guide and a sample material. A tapered portion forms a part of the entry of the wave guide and couples the electromagnetic radiation emanating from the source to the waveguide. The electromagnetic radiation passing from the exit of the waveguide is captured and directed to a detector for analysis.

Goldman, Don S. (Folsom, CA)

1995-01-01T23:59:59.000Z

152

Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures  

Science Conference Proceedings (OSTI)

The band offsets of PbSe/Pb{sub 1-x}Eu{sub x}Se multi-quantum wells grown by molecular beam epitaxy are determined as a function of temperature and europium content using temperature-modulated differential transmission spectroscopy. The confined quantum well states in the valence and conduction bands are analyzed using a k{center_dot}p model with envelope function approximation. From the fit of the experimental data, the normalized conduction band offset is determined as 0.45{+-}0.15 of the band gap difference, independently of Eu content up to 14% and temperature from 20 to 300 K.

Simma, M.; Bauer, G.; Springholz, G. [Institut fuer Halbleiter und Festkoerperphysik, Johannes Kepler Universitaet, A-4040 Linz (Austria)

2012-10-22T23:59:59.000Z

153

NSLS Insertion Devices  

NLE Websites -- All DOE Office Websites (Extended Search)

Insertion Devices MGU-25 VUV Ring Insertion Devices X-Ray Ring Insertion Devices VISA NISUS Flux & Brightness of NSLS IDs Magnetic Measurement Lab...

154

HIGH ENERGY GASEOUS DISCHARGE DEVICES  

DOE Patents (OSTI)

The high-energy electrical discharge device described comprises an envelope, a pair of main discharge electrodes supported in opposition in the envelope, and a metallic shell symmetrically disposed around and spaced from the discharge path between the electrodes. The metallic shell comprises a first element of spaced helical turns of metallic material and a second element of spaced helical turns of methllic material insulatedly supported in superposition outside the first element and with the turns overlapping the gap between the turns of the first element.

Josephson, V.

1960-02-16T23:59:59.000Z

155

PLASMA DEVICE  

DOE Patents (OSTI)

A device is described for establishing and maintaining a high-energy, rotational plasma for use as a fast discharge capacitor. A disc-shaped, current- conducting plasma is formed in an axinl magnetic field and a crossed electric field, thereby creating rotational kinetic enengy in the plasma. Such energy stored in the rotation of the plasma disc is substantial and is convertible tc electrical energy by generator action in an output line electrically coupled to the plasma volume. Means are then provided for discharging the electrical energy into an external circuit coupled to the output line to produce a very large pulse having an extremely rapid rise time in the waveform thereof. (AE C)

Baker, W.R.

1961-08-22T23:59:59.000Z

156

Modeling integrated photovoltaic-electrochemical devices using steady-state equivalent circuits  

E-Print Network (OSTI)

We describe a framework for efficiently coupling the power output of a series-connected string of single-band-gap solar cells to an electrochemical process that produces storable fuels. We identify the fundamental efficiency ...

Winkler, Mark Thomas

157

Laser device  

DOE Patents (OSTI)

A laser device includes a target position, an optical component separated a distance J from the target position, and a laser energy source separated a distance H from the optical component, distance H being greater than distance J. A laser source manipulation mechanism exhibits a mechanical resolution of positioning the laser source. The mechanical resolution is less than a spatial resolution of laser energy at the target position as directed through the optical component. A vertical and a lateral index that intersect at an origin can be defined for the optical component. The manipulation mechanism can auto align laser aim through the origin during laser source motion. The laser source manipulation mechanism can include a mechanical index. The mechanical index can include a pivot point for laser source lateral motion and a reference point for laser source vertical motion. The target position can be located within an adverse environment including at least one of a high magnetic field, a vacuum system, a high pressure system, and a hazardous zone. The laser source and an electro-mechanical part of the manipulation mechanism can be located outside the adverse environment. The manipulation mechanism can include a Peaucellier linkage.

Scott, Jill R. (Idaho Falls, ID); Tremblay, Paul L. (Idaho Falls, ID)

2007-07-10T23:59:59.000Z

158

THE ENERGY GAP IN NUCLEAR MATTER  

E-Print Network (OSTI)

W-7405-eng-48 THE ENERGY GAP IN NUCLEAR MATTER V. J. Emery31, 1960 .po THE ENERGY GAP IN NUCLEAR HNrTEh V. J. ? :merysingle-particle energy in nuclear matter. The internucleon

Emery, V.J.

2008-01-01T23:59:59.000Z

159

Interaction-induced excited-band condensate in a double-well optical lattice  

Science Conference Proceedings (OSTI)

We show theoretically that interaction effects in a double-well optical lattice can induce condensates in an excited band. For a symmetric double-well lattice, bosons condense into the bottom of the excited band at the edge of the Brillouin zone if the chemical potential is above a critical value. For an asymmetric lattice, a condensate with zero momentum is automatically induced in the excited band by the condensate in the lowest band. This is due to a combined effect of interaction and lattice potential, which reduces the band gap and breaks the inversion symmetry. Our work can be generalized to a superlattice composed of multiple-well potentials at each lattice site, where condensates can be induced in even higher bands.

Zhou Qi; Das Sarma, S. [Joint Quantum Institute, Department of Physics, University of Maryland, College Park, Maryland 20742 (United States); Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742 (United States); Porto, J. V. [Joint Quantum Institute, Department of Physics, University of Maryland, College Park, Maryland 20742 (United States)

2011-09-15T23:59:59.000Z

160

Band-engineered SrTiO{sub 3} nanowires for visible light photocatalysis  

Science Conference Proceedings (OSTI)

We have theoretically investigated the structural, electronic, and optical properties of perovskite SrTiO{sub 3} nanowires for use in visible light photocatalytic applications using pseudopotential density-functional theory calculations. The electronic structure calculations show that the band gap is modified in the SrTiO{sub 3} nanowires compared with that of the bulk. For TiO{sub 2}-terminated nanowires, the mid-band states induced by the combination of oxygen and strontium atoms on the surface lead to a shift in the valence band toward the conduction band without interference from the edge of the conduction band, which reduces the band gap. On the contrary, the electronic states induced by the combination of oxygen and strontium atoms on the surface of SrO-terminated nanowires lead to a shift in the conduction band toward the valence band. The calculated optical results indicate that the absorption edge of the nanowires shift towards the red-light region. These theoretical results suggest that perovskite SrTiO{sub 3} nanowires are promising candidates for use in visible light photocatalytic processes such as solar-assisted water splitting reactions.

Fu, Q.; He, T.; Li, J. L.; Yang, G. W. [State Key Laboratory of Optoelectronic Materials and Technologies, Institute of Optoelectronic and Functional Composite Materials, Nanotechnology Research Center, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong (China)

2012-11-15T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

1-ID: Sector 1, Insertion Device Beamline  

NLE Websites -- All DOE Office Websites (Extended Search)

1-ID beamline schematic 1-ID beamline schematic ID on-axis brilliance values 1-ID - Sector 1, Insertion Device Beamline Responsible Scientists Jon Almer, phone: (630) 252-1049, e-mail: almer@aps.anl.gov Sarvjit Shastri, phone: (630) 252-0129, e-mail: shastri@aps.anl.gov John Okasinski, phone: (630) 252-0162, e-mail: okasinski@aps.anl.gov Peter Kenesei, phone: (630) 252-0133, e-mail: kenesei@aps.anl.gov Scientific Programs Coupled high-energy SAXS/WAXS studies (HE-SAXS/WAXS) High-energy diffraction microscopy (HEDM) Single-grain studies Stress/strain/texture studies Pair-distribution function (PDF) measurements High-energy fluorescence Source Characteristics Upstream insertion device: APS Undulator A No. of Poles 72 Undulator Period 3.3 cm Device Length 2.4 m Minimum Gap 11 mm Downstream insertion device

162

Technical Standards, EPIcode-Gap Analysis - May 3, 2004 | Department...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

EPIcode-Gap Analysis - May 3, 2004 Technical Standards, EPIcode-Gap Analysis - May 3, 2004 May 3, 2004 Software Quality Assurance Improvement Plan: EPIcode Gap Analysis, Final...

163

Ultra high vacuum broad band high power microwave window  

DOE Patents (OSTI)

An improved high vacuum microwave window has been developed that utilizes high density polyethylene coated on two sides with SiOx, SiNx, or a combination of the two. The resultant low dielectric and low loss tangent window creates a low outgassing, low permeation seal through which broad band, high power microwave energy may be passed. No matching device is necessary and the sealing technique is simple. The features of the window are broad band transmission, ultra-high vacuum compatibility with a simple sealing technique, low voltage standing wave ratio, high power transmission and low cost.

Nguyen-Tuong, Viet (Seaford, VA); Dylla, III, Henry Frederick (Yorktown, VA)

1997-01-01T23:59:59.000Z

164

Ultra high vacuum broad band high power microwave window  

DOE Patents (OSTI)

An improved high vacuum microwave window has been developed that utilizes high density polyethylene coated on two sides with SiOx, SiNx, or a combination of the two. The resultant low dielectric and low loss tangent window creates a low outgassing, low permeation seal through which broad band, high power microwave energy may be passed. No matching device is necessary and the sealing technique is simple. The features of the window are broad band transmission, ultra-high vacuum compatibility with a simple sealing technique, low voltage standing wave ratio, high power transmission and low cost. 5 figs.

Nguyen-Tuong, V.; Dylla, H.F. III

1997-11-04T23:59:59.000Z

165

MI Gap Clearing Kicker Magnet Design Review  

SciTech Connect

The kicker system requirements were originally conceived for the NOvA project. NOvA is a neutrino experiment located in Minnesota. To achieve the desired neutrino flux several upgrades are required to the accelerator complex. The Recycler will be used as a proton pre-injector for the Main Injector (MI). As the Recycler is the same size as the MI, it is possible to do a single turn fill ({approx}11 {micro}sec), minimizing the proton injection time in the MI cycle and maximizing the protons on target. The Recycler can then be filled with beam while the MI is ramping to extract beam to the target. To do this requires two new transfer lines. The existing Recycler injection line was designed for 10{pi} pbar beams, not the 20{pi} proton beams we anticipate from the Booster. The existing Recycler extraction line allows for proton injection through the MI, while we want direct injection from the Booster. These two lines will be decommissioned. The new injection line from the MI8 line into the Recycler will start at 848 and end with injection kickers at RR104. The new extraction line in the RR30 straight section will start with a new extraction kicker at RR232 and end with new MI injection kickers at MI308. Finally, to reduce beam loss activation in the enclosure, a new gap clearing kicker will be used to extract uncaptured beam created during the slip stack injection process down the existing dump line. It was suggested that the MI could benefit from this type of system immediately. This led to the early installation of the gap clearing system in the MI, followed by moving the system to Recycler during NOvA. The specifications also changed during this process. Initially the rise and fall time requirements were 38 ns and the field stability was {+-}1%. The 38 ns is based on having a gap of 2 RF buckets between injections. (There are 84 RF buckets that can be filled from the Booster for each injection, but 82 would be filled with beam. MI and Recycler contain 588 RF buckets.) A rough cost/benefit analysis showed that increasing the number of empty buckets to 3 decreased the kicker system cost by {approx}30%. This could be done while not extending the running time since this is only a 1% reduction in protons per pulse, hence the rise and fall time are now 57 ns. Additionally, the {+-}1% tolerance would have required a fast correction kicker while {+-}3% could be achieved without this kicker. The loosened tolerance was based on experience on wide band damping systems in the MI. A higher power wideband damping system is a better use of the resources as it can be used to correct for multiple sources of emittance growth. Finally, with the use of this system for MI instead of Recycler, the required strength grew from 1.2 mrad to 1.7 mrad. The final requirements for this kicker are listed.

Jensen, Chris; /Fermilab

2008-10-01T23:59:59.000Z

166

Evidence of Eu{sup 2+} 4f electrons in the valence band spectra of EuTiO{sub 3} and EuZrO{sub 3}  

SciTech Connect

We report on optical band gap and valence electronic structure of two Eu{sup 2+}-based perovskites, EuTiO{sub 3} and EuZrO{sub 3} as revealed by diffuse optical scattering, electron energy loss spectroscopy, and valence-band x-ray photoelectron spectroscopy. The data show good agreement with the first-principles studies in which the top of the valence band structure is formed by the narrow Eu 4f{sup 7} electron band. The O 2p band shows the features similar to those of the Ba(Sr)TiO{sub 3} perovskites except that it is shifted to higher binding energies. Appearance of the Eu{sup 2+} 4f{sup 7} band is a reason for narrowing of the optical band gap in the title compounds as compared to their Sr-based analogues.

Kolodiazhnyi, T. [National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Valant, M. [Materials Research Laboratory, University of Nova Gorica, Vipavska 13, 5000 Nova Gorica (Slovenia); Williams, J. R. [International Center for Young Scientists (ICYS), MANA, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Bugnet, M.; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Ohashi, N. [International Center for Materials Nanoarchitectonics, MANA, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Sakka, Y. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

2012-10-15T23:59:59.000Z

167

Sketch Recognition on Mobile Devices  

E-Print Network (OSTI)

Sketch recognition allows computers to understand and model hand drawn sketches and diagrams. Traditionally sketch recognition systems required a pen based PC interface, but powerful mobile devices such as tablets and smartphones can provide a new platform for sketch recognition systems. We describe a new sketch recognition library, Strontium (SrL) that combines several existing sketch recognition libraries modified to run on both personal computers and on the Android platform. We analyzed the recognition speed and accuracy implications of performing low-level shape recognition on smartphones with touch screens. We found that there is a large gap in recognition speed on mobile devices between recognizing simple shapes and more complex ones, suggesting that mobile sketch interface designers limit the complexity of their sketch domains. We also found that a low sampling rate on mobile devices can affect recognition accuracy of complex and curved shapes. Despite this, we found no evidence to suggest that using a finger as an input implement leads to a decrease in simple shape recognition accuracy. These results show that the same geometric shape recognizers developed for pen applications can be used in mobile applications, provided that developers keep shape domains simple and ensure that input sampling rate is kept as high as possible.

Lucchese, George 1987-

2012-12-01T23:59:59.000Z

168

Bispyridinium-phenylene-based copolymers: low band gap n-type alternating copolymers  

E-Print Network (OSTI)

Bispyridinium-phenylene-based conjugated donor–acceptor copolymers were synthesized by a Stille cross-coupling and cyclization sequence. These polyelectrolytes are freely soluble in organic solvents and display broad optical ...

Swager, Timothy Manning

169

Temperature-dependent energy band gap variation in self-organized InAs quantum dots  

SciTech Connect

We investigated the temperature-dependent variation of the photoluminescence emission energy of self-organized InAs/GaAs quantum dots (QDs) grown by conventional Stranski-Krastanov (SK) molecular beam epitaxy and migration-enhanced molecular beam epitaxy (MEMBE) and that of MEMBE InAs QDs in a symmetric and an asymmetric In{sub 0.2}Ga{sub 0.8}As/GaAs well. The temperature-dependent energy variation of each QD is analyzed in low and high temperature regions, including a sigmoidal behavior of conventional SK quantum dots with the well-known Varshni and semi-empirical Fan models.

Yeo, Inah [CEA/CNRS/UJF Joint Team ''Nanophysics and Semiconductors,'' Institut Neel-CNRS, BP 166, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France); Dong Song, Jin; Lee, Jungil [Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)

2011-10-10T23:59:59.000Z

170

Tunable micro-cavities in photonic band-gap yarns and optical fibers  

E-Print Network (OSTI)

The vision behind this work is the fabrication of high performance innovative fiber-based optical components over kilometer length-scales. The optical properties of these fibers derive from their multilayer dielectric ...

Benoit, Gilles, Ph. D. Massachusetts Institute of Technology

2006-01-01T23:59:59.000Z

171

Observation of Wakefields in a Beam-Driven Photonic Band Gap...  

NLE Websites -- All DOE Office Websites (Extended Search)

Proceedings of IPAC'10, Kyoto, Japan THPD066 03 Linear Colliders, Lepton Accelerators and New Acceleration Techniques A14 Advanced Concepts 4431 Figure 1: Schematic...

172

Fabrication of band-gap structures in planar nonlinear waveguides for second harmonic generation  

Science Conference Proceedings (OSTI)

The work presented here deals with the design and fabrication of the linear grating on a LiNbO3 planar waveguide to obtain an efficient second harmonic generation operating in Cerenkov configuration. The lithium niobate is a nonlinear material ... Keywords: e-beam lithography, nonlinear optics

V. Foglietti; E. Cianci; D. Pezzetta; C. Sibilia; M. Marangoni; R. Osellame; R. Ramponi

2003-06-01T23:59:59.000Z

173

A New Gap-Opening Mechanism in a Triple-Band Metal  

NLE Websites -- All DOE Office Websites (Extended Search)

A new example comes from a collaboration between researchers from Yonsei University in Korea, the ALS, and the University of Oregon, who have discovered that the phase transition...

174

CONTROL LIMITER DEVICE  

DOE Patents (OSTI)

A control-limiting device for monltoring a control system is described. The system comprises a conditionsensing device, a condition-varying device exerting a control over the condition, and a control means to actuate the condition-varying device. A control-limiting device integrates the total movement or other change of the condition-varying device over any interval of time during a continuum of overlapping periods of time, and if the tothl movement or change of the condition-varying device exceeds a preset value, the control- limiting device will switch the control of the operated apparatus from automatic to manual control.

DeShong, J.A.

1960-03-01T23:59:59.000Z

175

Hotspot Gap Analysis Final 20070323  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

HS-0003 HS-0003 Software Evaluation of Hotspot and DOE Safety Software Toolbox Recommendation U.S. Department of Energy Office of Health, Safety and Security 1000 Independence Avenue, S.W. Washington, DC 20585-2040 March, 2007 ii Foreword This report documents the outcome of an evaluation of the Safety Software Quality Assurance (SSQA) attributes of Hotspot, a health physics application, relative to the safety software requirements identified in DOE O 414.1C, Quality Assurance. This evaluation, a "gap analysis", is performed according to the implementation guide DOE G 414.1-4, and is a requisite for deciding whether Hotspot should be designated as a toolbox code for DOE's safety software Central Registry. Comments regarding this document should be addressed to:

176

Functional Area Qualification Standard Gap Analysis Qualification Cards |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Services » Assistance » Federal Technical Capability Program » Services » Assistance » Federal Technical Capability Program » Functional Area Qualification Standard Gap Analysis Qualification Cards Functional Area Qualification Standard Gap Analysis Qualification Cards Note: 1. Save the document from the website onto your PC and close it. 2. Open the document on your PC. Answer "No" to the question regarding whether to open the documents as read only. Chemical Processing Gap Construction Management Gap Criticality Safety Gap Emergency Management Gap Environmental Restoration Gap Facility Representative Gap Fire Protection Engineering Gap General Technical Base Gap Industrial Hygiene Gap Mechanical Systems Gap Nuclear Explosive Safety Study Gap Nuclear Safety Specialist Gap Occupational Safety Gap Quality Assurance Gap

177

Tracing Medical Images Using Multi-Band Watermarks Mingyan Li, Sreeram Narayanan and Radha Poovendran  

E-Print Network (OSTI)

1 of 4 Tracing Medical Images Using Multi-Band Watermarks Mingyan Li, Sreeram Narayanan and Radha identify that there is a gap between current security solutions for the privacy protection of medical who distribute medical images illegally. We evaluate the suitability of some most widely used

Poovendran, Radha

178

Gap between active and passive solar heating  

DOE Green Energy (OSTI)

The gap between active and passive solar could hardly be wider. The reasons for this are discussed and advantages to narrowing the gap are analyzed. Ten years of experience in both active and passive systems are reviewed, including costs, frequent problems, performance prediction, performance modeling, monitoring, and cooling concerns. Trends are analyzed, both for solar space heating and for service water heating. A tendency for the active and passive technologies to be converging is observed. Several recommendations for narrowing the gap are presented.

Balcomb, J.D.

1985-01-01T23:59:59.000Z

179

THE ENERGY GAP IN NUCLEAR MATTER  

E-Print Network (OSTI)

energy gap for nuclear matter with a vieVi to gaining some ins ight into the possible results of extending the theory

Emery, V.J.

2008-01-01T23:59:59.000Z

180

FAQS Gap Analysis Qualification Card – Mechanical Systems  

Energy.gov (U.S. Department of Energy (DOE))

Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

FAQS Gap Analysis Qualification Card- Chemical Processing  

Energy.gov (U.S. Department of Energy (DOE))

Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

182

FAQS Gap Analysis Qualification Card – Technical Training  

Energy.gov (U.S. Department of Energy (DOE))

Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

183

Dilute Group III-V nitride intermediate band solar cells with contact blocking layers  

DOE Patents (OSTI)

An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

Walukiewicz, Wladyslaw (Kensington, CA); Yu, Kin Man (Lafayette, CA)

2012-07-31T23:59:59.000Z

184

Disappearing mobile devices  

Science Conference Proceedings (OSTI)

In this paper, we extrapolate the evolution of mobile devices in one specific direction, namely miniaturization. While we maintain the concept of a device that people are aware of and interact with intentionally, we envision that this concept can become ... Keywords: gesture, input device, interaction technique, miniaturization, mobile device, sensor, ubicomp, wearable

Tao Ni; Patrick Baudisch

2009-10-01T23:59:59.000Z

185

Elliptically polarizing adjustable phase insertion device  

DOE Patents (OSTI)

An insertion device for extracting polarized electromagnetic energy from a beam of particles is disclosed. The insertion device includes four linear arrays of magnets which are aligned with the particle beam. The magnetic field strength to which the particles are subjected is adjusted by altering the relative alignment of the arrays in a direction parallel to that of the particle beam. Both the energy and polarization of the extracted energy may be varied by moving the relevant arrays parallel to the beam direction. The present invention requires a substantially simpler and more economical superstructure than insertion devices in which the magnetic field strength is altered by changing the gap between arrays of magnets. 3 figures.

Carr, R.

1995-01-17T23:59:59.000Z

186

NEN Division Funding Gap Analysis  

Science Conference Proceedings (OSTI)

The work in NEN Division revolves around proliferation detection. The sponsor funding model seems to have shifted over the last decades. For the past three lustra, sponsors are mainly interested in funding ideas and detection systems that are already at a technical readiness level 6 (TRL 6 -- one step below an industrial prototype) or higher. Once this level is reached, the sponsoring agency is willing to fund the commercialization, implementation, and training for the systems (TRL 8, 9). These sponsors are looking for a fast turnaround (1-2 years) technology development efforts to implement technology. To support the critical national and international needs for nonprolifertion solutions, we have to maintain a fluent stream of subject matter expertise from the fundamental principals of radiation detection through prototype development all the way to the implementation and training of others. NEN Division has large funding gaps in the Valley of Death region. In the current competitive climate for nuclear nonproliferation projects, it is imminent to increase our lead in this field.

Esch, Ernst I. [Los Alamos National Laboratory; Goettee, Jeffrey D. [Los Alamos National Laboratory; Desimone, David J. [Los Alamos National Laboratory; Lakis, Rollin E. [Los Alamos National Laboratory; Miko, David K. [Los Alamos National Laboratory

2012-09-05T23:59:59.000Z

187

Annual Growth Bands in Hymenaea courbaril  

SciTech Connect

One significant source of annual temperature and precipitation data arises from the regular annual secondary growth rings of trees. Several tropical tree species are observed to form regular growth bands that may or may not form annually. Such growth was observed in one stem disk of the tropical legume Hymenaea courbaril near the area of David, Panama. In comparison to annual reference {Delta}{sup 14}C values from wood and air, the {Delta}{sup 14}C values from the secondary growth rings formed by H. courbaril were determined to be annual in nature in this one stem disk specimen. During this study, H. courbaril was also observed to translocate recently produced photosynthate into older growth rings as sapwood is converted to heartwood. This process alters the overall {Delta}{sup 14}C values of these transitional growth rings as cellulose with a higher {Delta}{sup 14}C content is translocated into growth rings with a relatively lower {Delta}{sup 14}C content. Once the annual nature of these growth rings is established, further stable isotope analyses on H. courbaril material in other studies may help to complete gaps in the understanding of short and of long term global climate patterns.

Westbrook, J A; Guilderson, T P; Colinvaux, P A

2004-02-09T23:59:59.000Z

188

Gas mixtures for spark gap closing switches  

DOE Patents (OSTI)

Gas mixtures for use in spark gap closing switches comprised of fluorocarbons and low molecular weight, inert buffer gases. To this can be added a third gas having a low ionization potential relative to the buffer gas. The gas mixtures presented possess properties that optimized the efficiency spark gap closing switches. 6 figs.

Christophorou, L.G.; McCorkle, D.L.; Hunter, S.R.

1987-02-20T23:59:59.000Z

189

Measurement of the intensity of the beam in the abort gap at the Tevatron utilizing synchrotron light  

SciTech Connect

This paper discusses the implementation of abort gap beam intensity monitoring at the Tevatron collider at Fermilab. There are two somewhat independent monitors which measure the intensity of the synchrotron light emitted by particles in the abort gaps. One system uses a gated Photomultiplier Tube (PMT) to measure the light intensity, and the other system uses a single lens telescope, gated image intensifier, and Charge Injection Device (CID) camera to image the beam.

Thurman-Keup, R.; Lorman, E.; Meyer, T.; Pordes, S.; /Fermilab; De Santis, S.; /LBL, Berkeley

2005-05-01T23:59:59.000Z

190

Judith Gap Wind Farm | Open Energy Information  

Open Energy Info (EERE)

Gap Wind Farm Gap Wind Farm Jump to: navigation, search Name Judith Gap Wind Farm Facility Judith Gap Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Invenergy Developer Invenergy Energy Purchaser Northwestern Energy Location South of Judith Gap MT Coordinates 46.6005°, -109.749° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":46.6005,"lon":-109.749,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

191

Far-infrared gaps in single-wall carbon nanotubes A. Ugawa, A. G. Rinzler, and D. B. Tanner  

E-Print Network (OSTI)

the fraction of the tubes that have metallic or small band gap character. Second, we perform an effective of metallic tubes with m , 1 f is the volume fraction of semiconducting tubes with s , and g The infrared properties of single-wall carbon nanotubes have been measured over 15­5000 cm 1 . The sample

Tanner, David B.

192

Electronic band structure and optical properties of the cubic, Sc, Y and La hydride systems  

DOE Green Energy (OSTI)

Electronic band structure calculations are used to interpret the optical spectra of the cubic Sc, Y and La hydride systems. Self-consistent band calculations of ScH/sub 2/ and YH/sub 2/ were carried out. The respective joint densities of states are computed and compared to the dielectric functions determined from the optical measurements. Additional calculations were performed in which the Fermi level or band gap energies are rigidly shifted by a small energy increment. These calculations are then used to simulate the derivative structure in thermomodulation spectra and relate the origin of experimental interband features to the calculated energy bands. While good systematic agreement is obtained for several spectral features, the origin of low-energy interband transitions in YH/sub 2/ cannot be explained by these calculated bands. A lattice-size-dependent premature occupation of octahedral sites by hydrogen atoms in the fcc metal lattice is suggested to account for this discrepancy. Various non-self-consistent calculations are used to examine the effect of such a premature occupation. Measurements of the optical absorptivity of LaH/sub x/ with 1.6 < x < 2.9 are presented which, as expected, indicate a more premature occupation of the octahedral sites in the larger LaH/sub 2/ lattice. These experimental results also suggest that, in contrast to recent calculations, LaH/sub 3/ is a small-band-gap semiconductor.

Peterman, D.J.

1980-01-01T23:59:59.000Z

193

Pneumatic Conveyance Device  

The Pneumatic Conveyance Device is capable of dislodging, capturing, and conveying solid material, wet or dry, from a depth of 70+ feet, while discharging through a 100+ foot conveyance hose.  The device was developed to remove water and solid ...

194

GAS DISCHARGE DEVICES  

DOE Patents (OSTI)

The construction of gas discharge devices where the object is to provide a gas discharge device having a high dark current and stabilized striking voltage is described. The inventors have discovered that the introduction of tritium gas into a discharge device with a subsequent electrical discharge in the device will deposit tritium on the inside of the chamber. The tritium acts to emit beta rays amd is an effective and non-hazardous way of improving the abovementioned discharge tube characteristics

Arrol, W.J.; Jefferson, S.

1957-08-27T23:59:59.000Z

195

Residential Energy Display Devices  

Science Conference Proceedings (OSTI)

Residential energy display devices provide direct feedback to consumers about their electricity use and cost, direct feedback that potentially can help customers manage electricity consumption. EPRI tested five different stand-alone display devices in its Energy Efficiency and Demand Response Living Laboratory to assess whether devices functioned according to manufacturer specifications. In addition to providing results of these tests, this Technology Brief describes how display devices operate, summariz...

2008-06-20T23:59:59.000Z

196

Pulse detecting device  

DOE Patents (OSTI)

A device for measuring particle flux comprises first and second photodiode detectors for receiving flux from a source and first and second outputs for producing first and second signals representing the flux incident to the detectors. The device is capable of reducing the first output signal by a portion of the second output signal, thereby enhancing the accuracy of the device. Devices in accordance with the invention may measure distinct components of flux from a single source or fluxes from several sources.

Riggan, W.C.

1984-01-01T23:59:59.000Z

197

Articulating feedstock delivery device  

DOE Patents (OSTI)

A fully articulable feedstock delivery device that is designed to operate at pressure and temperature extremes. The device incorporates an articulating ball assembly which allows for more accurate delivery of the feedstock to a target location. The device is suitable for a variety of applications including, but not limited to, delivery of feedstock to a high-pressure reaction chamber or process zone.

Jordan, Kevin

2013-11-05T23:59:59.000Z

198

Operated device estimation framework  

E-Print Network (OSTI)

Protective device estimation is a challenging task because there are numerous protective devices present in a typical distribution system. Among various protective devices, auto-reclosers and fuses are the main overcurrent protection on distribution systems. Operation of a protective device in response to a particular fault condition depends upon the protective device’s operating behavior and coordination of various such protective devices. This thesis presents the design and implementation of a protective device estimation algorithm which helps in identifying which protective devices have operated to clear a short circuit condition. The algorithm uses manufacturer’s device details, power quality data measured from substation monitoring devices and power system event features estimated using existing DFA algorithms. The proposed technique can be used to evaluate coordination of these protective devices and helps in locating a fault in a distribution system feeder. This approach is independent of feeder topology and could be readily used for any distribution system. The effectiveness of this algorithm is verified by simulated and actual test data. Suggestions are included for future research and application by electric utilities.

Rengarajan, Janarthanan

2008-12-01T23:59:59.000Z

199

Active terahertz metamaterial devices  

DOE Patents (OSTI)

Metamaterial structures are taught which provide for the modulation of terahertz frequency signals. Each element within an array of metamaterial (MM) elements comprises multiple loops and at least one gap. The MM elements may comprise resonators with conductive loops and insulated gaps, or the inverse in which insulated loops are present with conductive gaps; each providing useful transmissive control properties. The metamaterial elements are fabricated on a semiconducting substrate configured with a means of enhancing or depleting electrons from near the gaps of the MM elements. An on to off transmissivity ratio of about 0.5 is achieved with this approach. Embodiments are described in which the MM elements incorporated within a Quantum Cascade Laser (QCL) to provide surface emitting (SE) properties.

Chen, Houtong (Los Alamos, NM); Padilla, Willie John (Newton, MA); Averitt, Richard Douglas (Newton, MA); O' Hara, John F. (Los Alamos, NM); Lee, Mark (Albuquerque, NM)

2010-11-02T23:59:59.000Z

200

Buffalo Gap Wind Farm | Open Energy Information  

Open Energy Info (EERE)

Gap Wind Farm Gap Wind Farm Jump to: navigation, search Name Buffalo Gap Wind Farm Facility Buffalo Gap Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner AES Developer AES Energy Purchaser Direct Energy Location TX Coordinates 32.310556°, -100.149167° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":32.310556,"lon":-100.149167,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Modeling gap acceptance at freeway merges  

E-Print Network (OSTI)

This thesis develops a merging model that captures the gap acceptance behavior of drivers that merge from a ramp into a congested freeway. Merging can be classified into three types: normal, forced and cooperative lane ...

Lee, Gunwoo

2006-01-01T23:59:59.000Z

202

Portable data collection device  

DOE Patents (OSTI)

The present invention provides a portable data collection device that has a variety of sensors that are interchangeable with a variety of input ports in the device. The various sensors include a data identification feature that provides information to the device regarding the type of physical data produced by each sensor and therefore the type of sensor itself. The data identification feature enables the device to locate the input port where the sensor is connected and self adjust when a sensor is removed or replaced. The device is able to collect physical data, whether or not a function of a time.

French, Patrick D. (Aurora, CO)

1996-01-01T23:59:59.000Z

203

Unitary lens semiconductor device  

DOE Patents (OSTI)

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Lear, Kevin L. (Albuquerque, NM)

1997-01-01T23:59:59.000Z

204

High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD  

DOE Green Energy (OSTI)

Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H{sub 2}, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are reduced; (3) surface hydrogen removal--heavier and more energetic helium ions break the Si-H much easier than hydrogen ions. The preferential attachment of Si-H to Ge-H is reduced. They also found that with the small amount of hydrogen put into the plasma, the superior properties of a-(Si,Ge):H made from pure hydrogen dilution plasma were still maintained. These hydrogen ions help to remove the subsurface weakly bonded hydrogen and buried hydrogen. They also help to passivate the Ge-dangling bond.

Yong Liu

2002-05-31T23:59:59.000Z

205

Columbia River Component Data Gap Analysis  

SciTech Connect

This Data Gap Analysis report documents the results of a study conducted by Washington Closure Hanford (WCH) to compile and reivew the currently available surface water and sediment data for the Columbia River near and downstream of the Hanford Site. This Data Gap Analysis study was conducted to review the adequacy of the existing surface water and sediment data set from the Columbia River, with specific reference to the use of the data in future site characterization and screening level risk assessments.

L. C. Hulstrom

2007-10-23T23:59:59.000Z

206

The Forecast Gap: Linking Forwards and Forecasts  

Science Conference Proceedings (OSTI)

This report addresses a common problem in price forecasting: What to do when confronted with a persistent gap between results obtained from a structural forecast model and actual forward or spot prices? The report examines examples taken from natural gas and electric power forecasts and presents a novel approach to closing this “forecast gap.” Inspection reveals that the ratio of actual prices to forecast prices often exhibits stochastic movements that resemble those of commodity price movements. By usin...

2008-12-15T23:59:59.000Z

207

Highly efficient blue organic light emitting device using indium-free transparent anode Ga:ZnO with scalability for large area coating  

Science Conference Proceedings (OSTI)

The availability of economically-produced and environmentally-stable transparent conductive oxide (TCO) coatings is critical for the development of a variety of electronic devices requiring transparent electrodes. Such devices include liquid crystal display pixels and organic light emitting diodes (OLEDs),[1, 2] solar cell applications,[3, 4] and electrically heated windows.[5, 6] The materials fulfilling these requirements are usually wide band gap inorganic transparent conductive oxides (TCOs). Tin-doped indium oxide, or ITO, has traditionally been used for electronic TCO applications because of its low resistivity, high work function and transparency. Due to the increasing cost and limited supply of indium and its tendency to migrate in to the device, there has been increasing research interest to substitute ITO with an indium-free material. A number of alternative metal oxides and doped oxides have been evaluated as TCO materials with varying degrees of success.[7, 8] Among these alternatives to ITO, gallium-doped zinc oxide (GZO) [2, 9] and aluminium-doped zinc oxide (AZO) [10, 11] have drawn particular attention. These materials have been demonstrated to have resistivities and transparencies approaching those of the best ITO, low toxicity, and much lower materials cost. Although AZO is attractive as a TCO electrode material, GZO features a greater resistance to oxidation as a result of gallium’s greater electronegativity compared to Submitted to 2 aluminum.[12, 13

Wang, Liang (Frank); Matson, Dean W.; Polikarpov, Evgueni; Swensen, James S.; Bonham, Charles C.; Cosimbescu, Lelia; Berry, J. J.; Ginley, D. S.; Gaspar, Daniel J.; Padmaperuma, Asanga B.

2010-02-15T23:59:59.000Z

208

BNL | S-band Linac  

NLE Websites -- All DOE Office Websites (Extended Search)

S-band Linac S-band Linac Some experiments at the ATF require higher energies than what is available from the photoinjector. We use two traveling wave linac structures, known as 'SLAC sections' (from the famous 2-mile SLAC linac). Each section provides an acceleration given by: Energy gain (in MeV) = 10.8*SQRT(Power in MW)-39.5*Current(in amps) The current to be used is an equivalent steady state current. The microwave drive power, at a frequency of 2856 MHz, is provided by a single XK5 klystron tube (the old SLAC klystron). This tube can provide up to 25 MW. The ATF modulator can provide the XK5 klystron with high voltage for about 3 microseconds. This 3 microsecond pulse is called the macropulse. The repetition rate for the macropulses is from 1 to 6 per second. Within each

209

A GAP package for computation with coherent configurations  

Science Conference Proceedings (OSTI)

We present a GAP package for computing with Schurian coherent configurations and their representations. Keywords: GAP, GRAPE, association scheme, centralizer ring, coherent configuration, permutation group, sage, semidefinite programming

Dmitrii V. Pasechnik; Keshav Kini

2010-09-01T23:59:59.000Z

210

EIS-0370: Windy Gap Firming Project, Colorado | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0: Windy Gap Firming Project, Colorado EIS-0370: Windy Gap Firming Project, Colorado Summary This EIS, prepared by the Department of the Interior (Bureau of Reclamation, Great...

211

Barrier breaching device  

DOE Patents (OSTI)

A barrier breaching device that is designed primarily for opening holes in interior walls of buildings uses detonating fuse for explosive force. The fuse acts as the ribs or spokes of an umbrella-like device that may be opened up to form a cone. The cone is placed against the wall so that detonating fuse that rings the base of the device and which is ignited by the spoke-like fuses serves to cut a circular hole in the wall.

Honodel, C.A.

1983-06-01T23:59:59.000Z

212

Barrier breaching device  

DOE Patents (OSTI)

A barrier breaching device that is designed primarily for opening holes in interior walls of buildings uses detonating fuse for explosive force. The fuse acts as the ribs or spokes of an umbrella-like device that may be opened up to form a cone. The cone is placed against the wall so that detonating fuse that rings the base of the device and which is ignited by the spoke-like fuses serves to cut a circular hole in the wall.

Honodel, Charles A. (Tracy, CA)

1985-01-01T23:59:59.000Z

213

The Advantages of a Mixed-Band Radar Network for Severe Weather Operations: A Case Study of 13 May 2009  

Science Conference Proceedings (OSTI)

Adding a mix of X- or C-band radars to the current Weather Surveillance Radar-1988 Doppler (WSR-88D) network could address several limitations of the network, including improvements to spatial gaps in low-level coverage and temporal sampling of ...

Vivek N. Mahale; Jerald A. Brotzge; Howard B. Bluestein

214

THE DYNAMICALLY DISRUPTED GAP IN HD 142527  

SciTech Connect

The vestiges of planet formation have been observed in debris disks harboring young and massive gaseous giants. The process of giant planet formation is terminated by the dissipation of gas in the protoplanetary disk. The gas-rich disk around HD 142527 features a small inner disk, a large gap from {approx}10 to {approx}140 AU, and a massive outer disk extending out to {approx}300 AU. The gap could have been carved out by a giant planet. We have imaged the outer regions of this gap using the adaptive optics camera NICI on Gemini South. Our images reveal that the disk is dynamically perturbed. The outer boundary of the roughly elliptical gap appears to be composed of several segments of spiral arms. The stellar position is offset by 0.''17 {+-} 0.''02 from the centroid of the cavity, consistent with earlier imaging at coarser resolutions. These transient morphological features are expected in the context of disk evolution in the presence of a perturbing body located inside the cavity. We perform hydrodynamical simulations of the dynamical clearing of a gap in a disk. A 10 M{sub jup} body in a circular orbit at r = 90 AU perturbs the whole disks, even after thousands of orbits. By then the model disk has an eccentric and irregular cavity, flanked by tightly wound spiral arms, but it is still evolving far from steady state. A particular transient configuration that is a qualitative match to HD 142527 is seen at 1.7 Myr.

Casassus, S.; Perez M, S.; Menard, F. [Departamento de Astronomia, Universidad de Chile, Casilla 36-D, Santiago (Chile); Jordan, A.; Cuadra, J. [Departamento de Astronomia y Astrofisica, Pontificia Universidad Catolica de Chile, 7820436 Macul, Santiago (Chile); Schreiber, M. R. [Departamento de Fisica y Astronomia, Universidad Valparaiso, Av. Gran Bretana 111, Valparaiso (Chile); Hales, A. S. [Joint ALMA Observatory, Alonso de Cordova 3107, Vitacura 763-0355, Santiago (Chile); Ercolano, B., E-mail: scasassus@u.uchile.cl [University Observatory, Ludwig-Maximillians University, Munich (Germany)

2012-08-01T23:59:59.000Z

215

Trunnion Collar Removal Machine - Gap Analysis Table  

SciTech Connect

The purpose of this document is to review the existing the trunnion collar removal machine against the ''Nuclear Safety Design Bases for License Application'' (NSDB) [Ref. 10] requirements and to identify codes and standards and supplemental requirements to meet these requirements. If these codes and standards can not fully meet these requirements then a ''gap'' is identified. These gaps will be identified here and addressed using the ''Trunnion Collar Removal Machine Design Development Plan'' [Ref. 15]. The codes and standards, supplemental requirements, and design development requirements for the trunnion collar removal machine are provided in the gap analysis table (Appendix A, Table 1). Because the trunnion collar removal machine is credited with performing functions important to safety (ITS) in the NSDB [Ref. 10], design basis requirements are applicable to ensure equipment is available and performs required safety functions when needed. The gap analysis table is used to identify design objectives and provide a means to satisfy safety requirements. To ensure that the trunnion collar removal machine performs required safety functions and meets performance criteria, this portion of the gap analysis tables supplies codes and standards sections and the supplemental requirements and identifies design development requirements, if needed.

M. Johnson

2005-06-27T23:59:59.000Z

216

Chalcopyrite Heterojunction Photovoltaic Devices  

Science Conference Proceedings (OSTI)

This indicates that a p-n junction with photovoltaic response was formed between the films and Si. The estimated open -circuit voltage VOC for these devices is ...

217

High efficiency photovoltaic device  

DOE Patents (OSTI)

An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

Guha, Subhendu (Troy, MI); Yang, Chi C. (Troy, MI); Xu, Xi Xiang (Findlay, OH)

1999-11-02T23:59:59.000Z

218

Iris Device Qualification Test  

Science Conference Proceedings (OSTI)

... Device Qualification Test (IDQT). July 15, 2013 - Slides from Workshop. Slides that give the detailed technical approach toward the IDQT tests are ...

2013-07-16T23:59:59.000Z

219

Secure SMS based automatic device pairing approach for mobile phones  

Science Conference Proceedings (OSTI)

Bluetooth is recognized as one of the efficient way of data transmission at short distances wirelessly. Despite the fact that Bluetooth is widely accepted wireless standard for data transmission, there are also some security issues associated with Bluetooth. ... Keywords: global system for mobiles (GSM), mobile device pairing, out of band (OOB) channel, short messaging service (SMS)

Shoohira Aftab, Amna Khalid, Asad Raza, Haider Abbas

2013-07-01T23:59:59.000Z

220

NETL: News Release - Data Acquisition Processor Fills Gap for Extreme  

NLE Websites -- All DOE Office Websites (Extended Search)

9, 2010 9, 2010 Data Acquisition Processor Fills Gap for Extreme Down-hole Conditions Honeywell Develops Unique Reprogrammable High Temperature Device Morgantown, WV - Honeywell International, Inc. has developed a Reconfigurable Processor for Data Acquisition (RPDA) - a reprogrammable, multi-functional device that can operate at temperatures up to 250oC (482oF). The system is housed in a rugged package suitable for deep down-hole oil and natural gas logging and measurement-while-drilling (MWD) operations, and permanent wellbore installation applications. The project was funded through a cooperative agreement with the National Energy Technology Laboratory (NETL) under the Office of Fossil Energy's Oil and Natural Gas Program. Deep wells are generally defined as having a true vertical depth (TVD) greater than 15,000 feet, while ultra-deep wells are deeper than 25,000 feet TVD. Potential recoverable natural gas and oil resources from deep formations are significant, and deep wells tend to produce at much higher daily rates than conventional shallower wells.

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Mobile Device Management Android Device Enrollment  

E-Print Network (OSTI)

Play Store. b. Search for Zenprise for Employees. c. Tap Install. #12;d. Tap Accept and download. 4 your device. b. Tap Enroll Android. c. Enter your LSUHSC email address. #12;d. Enter LSUHSC password and click Enroll. i. StrongId should be blank. e. Accept the Terms and Conditions. 5. Installing Touchdown a

222

Narrow-band optical transmission of metallic nanoslit arrays  

Science Conference Proceedings (OSTI)

Metallic nanoslit arrays usually demonstrate wide transmission bands for transverse-magnetic-polarized incidence light. Here, we show that by introducing multi-dielectric layers underneath the metallic structure layer on the substrate, a narrow peak is formed, whose bandwidth can be down to a few nanometers. Three types of resonance modes in the region under the metal layer are identified responsible for the formation of the peak, i.e., a two-dimensional cavity resonance mode, which supports optical transmission, and two in-plane hybrid surface plasmon resonance modes locating on both sides of the peak that suppresses the transmission. Such structures can be applied in advanced photonic devices.

Sun Zhijun; Yang Ying; Zuo Xiaoliu [Department of Physics, Xiamen University, Xiamen 361005 (China)

2012-10-22T23:59:59.000Z

223

Olene Gap Geothermal Project | Open Energy Information  

Open Energy Info (EERE)

Olene Gap Geothermal Project Olene Gap Geothermal Project Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Development Project: Olene Gap Geothermal Project Project Location Information Coordinates 42.1725°, -121.62083333333° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.1725,"lon":-121.62083333333,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

224

Bridging The Gap 2013 | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

3 3 Mar 05 2013 03-05-2013 12:00 AM - 03-06-2013 05:00 PM Oak Ridge National Laboratory hosted the third annual Bridging the Gap on March 5-6, 2013. This event brought entrepreneurs, scientists, and technology transfer experts together to explore opportunities around the lab's most promising new technologies. Oak Ridge, TN CONTACT : Email: Cassie Lopez Phone:(865) 576-9294 Add to Calendar SHARE Bridging The Gap 2013 March 5-6, 2013 (Oak Ridge, TN) Tennessee A-B-C Conference Rooms (Building 5200) Oak Ridge National Laboratory hosted the third annual Bridging the Gap on March 5-6, 2013. This event brought entrepreneurs, scientists, and technology transfer experts together to explore opportunities around the lab's most promising new technologies. Keynote Address: Innovations at ORNL, Thom Mason

225

Device for packaging a lithium battery  

Science Conference Proceedings (OSTI)

Battery packing construction is described for packaging at least one lithium battery, the lithium battery including a solid polymer electrolyte in electrical contact with an anode of lithium or a lithium alloy and a cathode containing at least one metallic salt, the device comprising a first metallic foil having a first continuous band of plastic film bonded thereto by means of a thermoset adhesive along entire peripheral edges of the first metallic foil, a second metallic foil having a second continuous band of plastic film bonded thereto by means of a thermoset adhesive along entire peripheral edges of the second metallic foil, the first and second metallic foils disposed over one another with the first and second plastic films arranged adjacent one another in facing relationship, the lithium battery being sandwiched between the first and the second metallic foils in space inside the first and the second continuous bands of plastic film with the anode in contact with one metallic foil and the cathode in contact with the other metallic foil, the first and second continuous bands of plastic film being imperviously heat-sealed together to prevent any outside substance to contact the battery.

Duval, M.; Giguere, Y.

1993-07-13T23:59:59.000Z

226

Closing Gaps in Modeling Multifamily Retrofits  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Building America Technical Update Meeting Denver, Colorado April 30, 2013 Jordan Dentz, The Levy Partnership., Inc. Closing Gaps in Modeling Multifamily Retrofits Advanced Residential Integrated Energy Solutions Overview * Multifamily modeling inputs (BA House Simulation Protocols) * Important multifamily measures * Other MF gaps Vital to meet 50% goals and therefore important to include in Building America's multifamily modeling capabilities Model Inputs * Heating set point * Cooling set point * Behavior assumptions 3 Heating Set Point - Central Systems * House simulation protocol assumes 71°F * Overheating is common * Approach: adjust modeled heating set point - how much? * Average heating season indoor temperature was 76°F in a sample of 18 buildings (ARIES 2013a)

227

A University of Alabama Axial-Gap Electric Motor Developmenty  

E-Print Network (OSTI)

­ Develop axial gap permanent-magnet electric Axial motor ­ Develop axial gap permanent-magnet electricCAVT A University of Alabama Axial-Gap Electric Motor Developmenty Research Center OBJECTIVE motor topologies with high torque and power densities MOTIVATION ­ Axial-gap ("pancake") motors have

Carver, Jeffrey C.

228

UT-TRIBE-NORTHWESTERN BAND OF SHOSHONE  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

U.S. Department of Energy Categorical Exclusion Determination Form Program or Field Office: Energy Efficiency and Conservation Block Grant Program Project Title UT-TRIBE-NORTHWESTERN BAND OF SHOSHONE Location: Tribe UT-TRIBE- NORTHWESTERN BAND OF SHOSHONE UT American Recovery and Reinvestment Act: Proposed Action or Project Description The Northwestern Band of Shoshone Nation of Utah proposes to perform energy efficiency improvements

229

Grey man devices  

E-Print Network (OSTI)

The Vision Slaved to Walking Device i s one in a series of devices that are a result of the experimental ambulation series. The ability to see only when one's feet are moving allows for a distorted perspective of ones own ...

Sethi, Sanjit (Sanjit Singh), 1971-

2002-01-01T23:59:59.000Z

230

Verifiably secure devices  

Science Conference Proceedings (OSTI)

We put forward the notion of a verifiably secure device, in essence a stronger notion of secure computation, and achieve it in the ballot-box model. Verifiably secure devices 1. Provide a perfect solution to the problem of achieving correlated equilibrium, ...

Sergei Izmalkov; Matt Lepinski; Silvio Micali

2008-03-01T23:59:59.000Z

231

Device for removing blackheads  

DOE Patents (OSTI)

A device for removing blackheads from pores in the skin having a elongated handle with a spoon shaped portion mounted on one end thereof, the spoon having multiple small holes piercing therethrough. Also covered is method for using the device to remove blackheads.

Berkovich, Tamara (116 N. Wetherly Dr., Suite 115, Los Angeles, CA)

1995-03-07T23:59:59.000Z

232

Self-actuated device  

DOE Patents (OSTI)

A self-actuated device, of particular use as a valve or an orifice for nuclear reactor fuel and blanket assemblies, in which a gas produced by a neutron induced nuclear reaction gradually accumulates as a function of neutron fluence. The gas pressure increase occasioned by such accumulation of gas is used to actuate the device.

Hecht, Samuel L. (Richland, WA)

1984-01-01T23:59:59.000Z

233

Chronology of Computing Devices  

Science Conference Proceedings (OSTI)

A chronology of computing devices is given. It begins with the abacus and counting tables, and traces the development through desk calculators, analog computers, and finally stored program automatic digital computers. Significant dates relative to the ... Keywords: Calculating machines, chronology, computers, computing devices, history.

H. D. Huskey; V. R. Huskey

1976-12-01T23:59:59.000Z

234

Planar electrochemical device assembly  

DOE Patents (OSTI)

A pre-fabricated electrochemical device having a dense electrolyte disposed between an anode and a cathode preferably deposited as thin films is bonded to a porous electrically conductive support. A second porous electrically conductive support may be bonded to a counter electrode of the electrochemical device. Multiple electrochemical devices may be bonded in parallel to a single porous support, such as a perforated sheet to provide a planar array. Planar arrays may be arranged in a stacked interconnected array. A method of making a supported electrochemical device is disclosed wherein the method includes a step of bonding a pre-fabricated electrochemical device layer to an existing porous metal or porous metal alloy layer.

Jacobson; Craig P. (Lafayette, CA), Visco; Steven J. (Berkeley, CA), De Jonghe; Lutgard C. (Lafayette, CA)

2010-11-09T23:59:59.000Z

235

Planar electrochemical device assembly  

DOE Patents (OSTI)

A pre-fabricated electrochemical device having a dense electrolyte disposed between an anode and a cathode preferably deposited as thin films is bonded to a porous electrically conductive support. A second porous electrically conductive support may be bonded to a counter electrode of the electrochemical device. Multiple electrochemical devices may be bonded in parallel to a single porous support, such as a perforated sheet to provide a planar array. Planar arrays may be arranged in a stacked interconnected array. A method of making a supported electrochemical device is disclosed wherein the method includes a step of bonding a pre-fabricated electrochemical device layer to an existing porous metal or porous metal alloy layer.

Jacobson, Craig P. (Lafayette, CA); Visco, Steven J. (Berkeley, CA); De Jonghe, Lutgard C. (Lafayette, CA)

2007-06-19T23:59:59.000Z

236

Fluidic nanotubes and devices  

DOE Patents (OSTI)

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Yang, Peidong (El Cerrito, CA); He, Rongrui (El Cerrito, CA); Goldberger, Joshua (Berkeley, CA); Fan, Rong (El Cerrito, CA); Wu, Yiying (Albany, CA); Li, Deyu (Albany, CA); Majumdar, Arun (Orinda, CA)

2010-01-10T23:59:59.000Z

237

Fluidic nanotubes and devices  

DOE Patents (OSTI)

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Yang, Peidong (Berkeley, CA); He, Rongrui (El Cerrito, CA); Goldberger, Joshua (Berkeley, CA); Fan, Rong (El Cerrito, CA); Wu, Yiying (Albany, CA); Li, Deyu (Albany, CA); Majumdar, Arun (Orinda, CA)

2008-04-08T23:59:59.000Z

238

Device for cutting protrusions  

DOE Patents (OSTI)

An apparatus for clipping a protrusion of material is provided. The protrusion may, for example, be a bolt head, a nut, a rivet, a weld bead, or a temporary assembly alignment tab protruding from a substrate surface of assembled components. The apparatus typically includes a cleaver having a cleaving edge and a cutting blade having a cutting edge. Generally, a mounting structure configured to confine the cleaver and the cutting blade and permit a range of relative movement between the cleaving edge and the cutting edge is provided. Also typically included is a power device coupled to the cutting blade. The power device is configured to move the cutting edge toward the cleaving edge. In some embodiments the power device is activated by a momentary switch. A retraction device is also generally provided, where the retraction device is configured to move the cutting edge away from the cleaving edge.

Bzorgi, Fariborz M. (Knoxville, TN)

2011-07-05T23:59:59.000Z

239

Global Awareness Program (GAP) University Coordinator: Jane Irungu, (gap@ku.edu, 864-7265) http://www.international.ku.edu/~oip/gap/  

E-Print Network (OSTI)

evidence that they are prepared to LIVE, LEAD and WORK in a global society. GAP is offering students should register on-line at the following website: http://www.international.ku.edu/~oip/gap/ Steps

Peterson, Blake R.

240

WIDE BAND REGENERATIVE FREQUENCY DIVIDER AND MULTIPLIER  

DOE Patents (OSTI)

A regenerative frequency divider and multiplier having wide band input characteristics is presented. The circuit produces output oscillations having frequencies related by a fixed ratio to input oscillations over a wide band of frequencies. In accomplishing this end, the divider-multiplier includes a wide band input circuit coupled by mixer means to a wide band output circuit having a pass band related by a fixed ratio to that of the input circuit. A regenerative feedback circuit derives a fixed frequency ratio feedback signal from the output circuit and applies same to the mixer means in proper phase relation to sustain fixed frequency ratio oscillations in the output circuit.

Laine, E.F.

1959-11-17T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

FINAL REPORT ON GDE GAP CELL  

DOE Green Energy (OSTI)

A project has been undertaken to develop an electrochemical cell and support equipment for evaluation of a gas diffusion electrode-based, narrow-electrolyte-gap anode for SO{sub 2} oxidation in the hydrogen production cycle of the hybrid sulfur (HyS) process. The project supported the HyS development program at the Savannah River National Lab (SRNL). The benefits of using a gas diffusion electrode in conjunction with the narrow anolyte gap are being determined through electrochemical polarization testing under a variety conditions, and by comparison to results produced by SRNL and others using anode technologies that have no anolyte gap. These test results indicate that the NGA cell has low resistance suitable for use in the HyS electrolyzer, exhibits good efficiency at high current densities compared to the direct feed HyS electrolyzer, and indicates robust performance in extended testing over 65 hours. Seepage episodes were mostly caused by port clogging, which can be mitigated in future designs through minor modifications to the hardware. Significant reductions in sulfur crossover have not yet been demonstrated in the NGA configuration compared to in-house direct feed testing, but corroborative sulfur layer analysis is as yet incomplete. Further testing in a single-pass anolyte configuration is recommended for complete evaluation of steady-state electrochemical efficiency and SO{sub 2} crossover in the narrow gap configuration.

Herman, D.; Summers, W.; Danko, E.

2009-09-28T23:59:59.000Z

242

Theoretical analysis of two-gap superconductivity of magnesium diborades and iron pnictides in the generalized {alpha} model  

SciTech Connect

A generalized {alpha} model for computing the superconducting parameters of real two-band superconductors is proposed based on an analysis of the properties of two-band equations in the theory of superconductivity. Using this model, we calculate the heat capacity and optical properties of Ba(Fe{sub 1-x}Co{sub x}){sub 2}As{sub 2} superconducting compound and obtain the temperature dependences of the gaps and energies of the Leggett modes in the Mg{sub 1-x}Al{sub x}B{sub 2} superconducting system. Good quantitative coincidence of the calculated data and experimental results is demonstrated.

Maksimov, E. G. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Karakozov, A. E., E-mail: karakozov@mtu-net.ru [Russian Academy of Sciences, Vereshchagin Institute for High-Pressure Physics (Russian Federation); Gorshunov, B. P., E-mail: gorshunov@ran.gpi.ru [Russian Academy of Sciences, Prokhorov Institute of General Physics (Russian Federation); Ponomarev, Ya. G. [Moscow State University (Russian Federation); Zhukova, E. S. [Russian Academy of Sciences, Prokhorov Institute of General Physics (Russian Federation); Dressel, M. [Universitaet Stuttgart, 1. Physikalisches Institut (Germany)

2012-08-15T23:59:59.000Z

243

GaNPAs Solar Cells Lattice-Matched To GaP: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

Geisz, J. F.; Friedman, D. J.; Kurtz, S.

2002-05-01T23:59:59.000Z

244

Method and device for tensile testing of cable bundles  

DOE Patents (OSTI)

A standard tensile test device is improved to accurately measure the mechanical properties of stranded cables, ropes, and other composite structures wherein a witness is attached to the top and bottom mounting blocks holding the cable under test. The witness is comprised of two parts: a top and a bottom rod of similar diameter with the bottom rod having a smaller diameter stem on its upper end and the top rod having a hollow opening in its lower end into which the stem fits forming a witness joint. A small gap is present between the top rod and the larger diameter portion of the bottom rod. A standard extensometer is attached to the top and bottom rods of the witness spanning this small witness gap. When a force is applied to separate the mounting blocks, the gap in the witness expands the same length that the entire test specimen is stretched.

Robertson, Lawrence M; Ardelean, Emil V; Goodding, James C; Babuska, Vit

2012-10-16T23:59:59.000Z

245

INTERNAL CUTTING DEVICE  

DOE Patents (OSTI)

A device is described for removing material from the interior of a hollow workpiece so as to form a true spherical internal surface in a workpiece, or to cut radial slots of an adjustable constant depth in an already established spherical internal surface. This is accomplished by a spring loaded cutting tool adapted to move axially wherein the entire force urging the tool against the workpiece is derived from the spring. Further features of importance involve the provision of a seal between the workpiece and the cutting device and a suction device for carrying away particles of removed material.

Russell, W.H. Jr.

1959-06-30T23:59:59.000Z

246

Rain sampling device  

DOE Patents (OSTI)

The present invention constitutes a rain sampling device adapted for independent operation at locations remote from the user which allows rainfall to be sampled in accordance with any schedule desired by the user. The rain sampling device includes a mechanism for directing wet precipitation into a chamber, a chamber for temporarily holding the precipitation during the process of collection, a valve mechanism for controllably releasing samples of the precipitation from the chamber, a means for distributing the samples released from the holding chamber into vessels adapted for permanently retaining these samples, and an electrical mechanism for regulating the operation of the device. 11 figures.

Nelson, D.A.; Tomich, S.D.; Glover, D.W.; Allen, E.V.; Hales, J.M.; Dana, M.T.

1991-05-14T23:59:59.000Z

247

SLUG HANDLING DEVICES  

DOE Patents (OSTI)

A device is described for handling fuel elements of a neutronic reactor. The device consists of two concentric telescoped contalners that may fit about the fuel element. A number of ratchet members, equally spaced about the entrance to the containers, are pivoted on the inner container and spring biased to the outer container so thnt they are forced to hear against and hold the fuel element, the weight of which tends to force the ratchets tighter against the fuel element. The ratchets are released from their hold by raising the inner container relative to the outer memeber. This device reduces the radiation hazard to the personnel handling the fuel elements.

Gentry, J.R.

1958-09-16T23:59:59.000Z

248

Energy harvesting devices for harvesting energy from terahertz electromagnetic radiation  

DOE Patents (OSTI)

Methods, devices and systems for harvesting energy from electromagnetic radiation are provided including harvesting energy from electromagnetic radiation. In one embodiment, a device includes a substrate and one or more resonance elements disposed in or on the substrate. The resonance elements are configured to have a resonant frequency, for example, in at least one of the infrared, near-infrared and visible light spectra. A layer of conductive material may be disposed over a portion of the substrate to form a ground plane. An optical resonance gap or stand-off layer may be formed between the resonance elements and the ground plane. The optical resonance gap extends a distance between the resonance elements and the layer of conductive material approximately one-quarter wavelength of a wavelength of the at least one resonance element's resonant frequency. At least one energy transfer element may be associated with the at least one resonance element.

Novack, Steven D.; Kotter, Dale K.; Pinhero, Patrick J.

2012-10-09T23:59:59.000Z

249

Band offsets in ZrO{sub 2}/InGaZnO{sub 4} heterojunction  

SciTech Connect

X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band ( White-Up-Pointing-Triangle E{sub V}) of amorphous InGaZnO{sub 4} (a-IGZO)/ZrO{sub 2} heterostructure deposited by DC and RF sputtering at room temperature, respectively. A value of White-Up-Pointing-Triangle E{sub V}= 0 eV was obtained by using the Ga and Zn 2p{sup 3} and In 3d{sup 3} energy levels as references. Given the experimental band gap of 3.1 eV and 5.8 eV for the a-IGZO and ZrO{sub 2}, respectively, this would indicate a conduction band offset of 2.7 eV in the system.

Yao Jianke [School of Computer and Information Engineering, Shenzhen Graduate School, Peking University, Shenzhen 518055 (China); Zhang Shengdong [School of Computer and Information Engineering, Shenzhen Graduate School, Peking University, Shenzhen 518055 (China); Institute of Microelectronics, Peking University, Beijing 100871 (China); Gong Li [Instrumental Analysis and Research Center, Sun Yat-Sen University, Guangzhou 510275 (China)

2012-08-27T23:59:59.000Z

250

Low-cost CdZnTe devices for cascade cell application  

DOE Green Energy (OSTI)

This report describes a research program to develop a low-cost technique for producing Cd{sub 1-x}Zn{sub x}Te devices for cascade solar cell applications. The technique involves a two-stage process for fabricating such devices with a band gap of about 1.7 eV and a transparent contact layer of low-resistivity ZnTe. In the first stage, thin films of Cd, Zn, and Te are deposited in stacked layers as Cd{sub 1-x}An{sub x}Te. The second stage involves hearing and reacting the layers to form the compound. At first, electrodeposition was used for depositing the layers to successfully fabricate Dc{sub 1-x}Zn{sub x}Te thin-film devices. These films were also intrinsically doped with copper. For the first time, transparent ZnTe films of low resistivity were obtained in a two-stage process; preliminary solar cells using films with low Zn content were demonstrated. A second phase of the project involved growing films with higher Zn content (>15%). Such films were grown on CdS-coated substrates for fabricating devices. The effects of the solar-cell processing steps on the Cd{sub 1-x}Zn{sub x}Te and CdS/Cd{sub 1-x}Zn{sub x}Te interfaces were studied; results showed that the nature of the interface depended on the stoichiometry of the Cd{sub 1-x}Zn{sub x}Te thin film. A sharp interface was observed for the CdS/CdTe structures, but the interface became highly diffused as the Zn content in the absorber layer increased above 15%. The interaction between the CdS window layer and the Cd{sub 1-x}Zn{sub x}Te absorber layer was found to result from an exchange reaction between Zn in the absorber layer and the thin CdS film. 14 refs., 10 figs.

Basol, B.M.; Kapur, V.K. (International Solar Electric Technology, Inglewood, CA (USA))

1990-11-01T23:59:59.000Z

251

Slit injection device  

DOE Patents (OSTI)

A laser cavity electron beam injection device provided with a single elongated slit window for passing a suitably shaped electron beam and means for varying the current density of the injected electron beam.

Alger, Terry W. (Livermore, CA); Schlitt, Leland G. (Livermore, CA); Bradley, Laird P. (Livermore, CA)

1976-06-15T23:59:59.000Z

252

Multimaterial rectifying device fibers  

E-Print Network (OSTI)

Electronic and optoelectronic device processing is commonly thought to be incompatible with much simpler thermal drawing techniques used in optical fiber production. The incorporation of metals, polymer insulators, and ...

Orf, Nicholas D

2009-01-01T23:59:59.000Z

253

DEVICE RESEARCH CONFERENCE  

Science Conference Proceedings (OSTI)

Jun 23, 2004 ... Inverter in Single-Wall Carbon Nanotubes. D. Tsuya1,2, M. Suzuki 1,3, Y. Aoyagi2, K. Ishibashi1,3,. 1Advanced Device Laboratory, The Institute.

254

Device for conversion of electromagnetic radiation into electrical current  

DOE Patents (OSTI)

Electromagnetic energy may be converted directly into electrical energy by a device comprising a sandwich of at least two semiconductor portions, each portion having a p-n junction with a characteristic energy gap, and the portions lattice matched to one another by an intervening superlattice structure. This superlattice acts to block propagation into the next deposited portion of those dislocation defects which can form due to lattice mismatch between adjacent portions.

Blakeslee, A.E.; Mitchell, K.W.

1980-03-25T23:59:59.000Z

255

Device for conversion of electromagnetic radiation into electrical current  

DOE Patents (OSTI)

Electromagnetic energy may be converted directly into electrical energy by a device comprising a sandwich of at least two semiconductor portions, each portion having a p-n junction with a characteristic energy gap, and the portions lattice matched to one another by an intervening superlattice structure. This superlattice acts to block propagation into the next deposited portion of those dislocation defects which can form due to lattice mismatch between adjacent portions.

Blakeslee, A. Eugene (Golden, CO); Mitchell, Kim W. (Indian Hill, CO)

1981-01-01T23:59:59.000Z

256

Raney nickel catalytic device  

DOE Patents (OSTI)

A catalytic device for use in a conventional coal gasification process which includes a tubular substrate having secured to its inside surface by expansion a catalytic material. The catalytic device is made by inserting a tubular catalytic element, such as a tubular element of a nickel-aluminum alloy, into a tubular substrate and heat-treating the resulting composite to cause the tubular catalytic element to irreversibly expand against the inside surface of the substrate.

O' Hare, Stephen A. (Vienna, VA)

1978-01-01T23:59:59.000Z

257

Electronic security device  

DOE Patents (OSTI)

The present invention relates to a security device having a control box (12) containing an electronic system (50) and a communications loop (14) over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system (50) and a detection module (72) capable of registering changes in the voltage and phase of the signal transmitted over the loop.

Eschbach, Eugene A. (Richland, WA); LeBlanc, Edward J. (Kennewick, WA); Griffin, Jeffrey W. (Kennewick, WA)

1992-01-01T23:59:59.000Z

258

Contamination control device  

DOE Patents (OSTI)

A contamination control device for use in a gas-insulated transmission bus consisting of a cylindrical center conductor coaxially mounted within a grounded cylindrical enclosure. The contamination control device is electrically connected to the interior surface of the grounded outer shell and positioned along an axial line at the lowest vertical position thereon. The contamination control device comprises an elongated metallic member having a generally curved cross-section in a first plane perpendicular to the axis of the bus and having an arcuate cross-section in a second plane lying along the axis of the bus. Each opposed end of the metallic member and its opposing sides are tapered to form a pair of generally converging and downward sloping surfaces to trap randomly moving conductive particles in the relatively field-free region between the metallic member and the interior surface of the grounded outer shell. The device may have projecting legs to enable the device to be spot welded to the interior of the grounded housing. The control device provides a high capture probability and prevents subsequent release of the charged particles after the capture thereof.

Clark, Robert M. (Ligonier, PA); Cronin, John C. (Greensburg, PA)

1977-01-01T23:59:59.000Z

259

Electronic security device  

DOE Patents (OSTI)

The present invention relates to a security device having a control box containing an electronic system and a communications loop over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system and a detection module capable of registering changes in the voltage and phase of the signal transmitted over the loop. 11 figs.

Eschbach, E.A.; LeBlanc, E.J.; Griffin, J.W.

1992-03-17T23:59:59.000Z

260

Electrically detected magnetic resonance in a W-band microwave cavity  

SciTech Connect

We describe a low-temperature sample probe for the electrical detection of magnetic resonance in a resonant W-band (94 GHz) microwave cavity. The advantages of this approach are demonstrated by experiments on silicon field-effect transistors. A comparison with conventional low-frequency measurements at X-band (9.7 GHz) on the same devices reveals an up to 100-fold enhancement of the signal intensity. In addition, resonance lines that are unresolved at X-band are clearly separated in the W-band measurements. Electrically detected magnetic resonance at high magnetic fields and high microwave frequencies is therefore a very sensitive technique for studying electron spins with an enhanced spectral resolution and sensitivity.

Lang, V.; Lo, C. C.; George, R. E.; Lyon, S. A.; Bokor, J.; Schenkel, T.; Ardavan, A.; Morton, J. J. L.

2011-01-14T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Bridging the Gap 2011 | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

1 1 Apr 05 2011 04-05-2011 08:00 AM - 04-06-2011 05:00 PM Oak Ridge National Laboratory's Partnerships Directorate will host Bridging the Gap, a unique technology commercialization event, April 5-6 at Oak Ridge National Laboratory. Oak Ridge, TN Oak Ridge National Laboratory CONTACT : Email: Cassie Lopez Phone:(865) 576-9294 Add to Calendar SHARE Oak Ridge National Laboratory's Partnerships Directorate will host Bridging the Gap, a unique technology commercialization event, April 5-6 at Oak Ridge National Laboratory. The event will provide investors and entrepreneurs opportunities to learn about promising ORNL technologies available for license and to hear from ORNL licensees seeking growth capital. There will also be opportunities to tour ORNL's world-class research facilities and network with some of the

262

Photonic gaps in cholesteric elastomers under deformation  

E-Print Network (OSTI)

Cholesteric liquid crystal elastomers have interesting and potentially very useful photonic properties. In an ideal monodomain configuration of these materials, one finds a Bragg-reflection of light in a narrow wavelength range and a particular circular polarization. This is due to the periodic structure of the material along one dimension. In many practical cases, the cholesteric rubber possesses a sufficient degree of quenched disorder, which makes the selective reflection broadband. We investigate experimentally the problem of how the transmittance of light is affected by mechanical deformation of the elastomer, and the relation to changes in liquid crystalline structure. We explore a series of samples which have been synthesized with photonic stop-gaps across the visible range. This allows us to compare results with detailed theoretical predictions regarding the evolution of stop-gaps in cholesteric elastomers.

P. Cicuta; A. R. Tajbakhsh; E. M. Terentjev

2004-08-27T23:59:59.000Z

263

Chemical potential and the gap equation  

E-Print Network (OSTI)

In general the kernel of QCD's gap equation possesses a domain of analyticity upon which the equation's solution at nonzero chemical potential is simply obtained from the in-vacuum result through analytic continuation. On this domain the single-quark number- and scalar-density distribution functions are mu-independent. This is illustrated via two models for the gap equation's kernel. The models are alike in concentrating support in the infrared. They differ in the form of the vertex but qualitatively the results are largely insensitive to the Ansatz. In vacuum both models realise chiral symmetry in the Nambu-Goldstone mode and in the chiral limit, with increasing chemical potential, exhibit a first-order chiral symmetry restoring transition at mu~M(0), where M(p^2) is the dressed-quark mass function. There is evidence to suggest that any associated deconfinement transition is coincident and also of first-order.

Huan Chen; Wei Yuan; Lei Chang; Yu-Xin Liu; Thomas Klahn; Craig D. Roberts

2008-07-17T23:59:59.000Z

264

Gap Assessment in the Emergency Response Community  

SciTech Connect

This report describes a gap analysis of the emergency response and management (EM) community, performed during the fall of 2009. Pacific Northwest National Laboratory (PNNL) undertook this effort to identify potential improvements to the functional domains in EM that could be provided by the application of current or future technology. To perform this domain-based gap analysis, PNNL personnel interviewed subject matter experts (SMEs) across the EM domain; to make certain that the analyses reflected a representative view of the community, the SMEs were from a variety of geographic areas and from various sized communities (urban, suburban, and rural). PNNL personnel also examined recent and relevant after-action reports and U.S. Government Accountability Office reports.

Barr, Jonathan L.; Burtner, Edwin R.; Pike, William A.; Peddicord, Annie M Boe; Minsk, Brian S.

2010-09-27T23:59:59.000Z

265

Elementary excitations in gapped quantum spin systems  

E-Print Network (OSTI)

For quantum lattice systems with local interactions, the Lieb-Robinson bound acts as an alternative for the strict causality of relativistic systems and allows to prove many interesting results, in particular when the energy spectrum exhibits an energy gap. In this Letter, we show that for translation invariant systems, simultaneous eigenstates of energy and momentum with an eigenvalue that is separated from the rest of the spectrum in that momentum sector, can be arbitrarily well approximated by building a momentum superposition of a local operator acting on the ground state. The error decreases in the size of the support of the local operator, with a rate that is set by the gap below and above the targeted eigenvalue. We show this explicitly for the AKLT model and discuss generalizations and applications of our result.

Jutho Haegeman; Spyridon Michalakis; Bruno Nachtergaele; Tobias J. Osborne; Norbert Schuch; Frank Verstraete

2013-05-09T23:59:59.000Z

266

HIGH VOLTAGE, HIGH CURRENT SPARK GAP SWITCH  

DOE Patents (OSTI)

A high voltage and current spark gap switch comprising two main electrodes insulatingly supported in opposed spaced relationship and a middle electrode supported medially between the main electrodes and symmetrically about the median line of the main electrodes is described. The middle electrode has a perforation aligned with the median line and an irradiation electrode insulatingly supported in the body of the middle electrode normal to the median line and protruding into the perforation. (AEC)

Dike, R.S.; Lier, D.W.; Schofield, A.E.; Tuck, J.L.

1962-04-17T23:59:59.000Z

267

SHEEP MOUNTAIN URANIUM PROJECT CROOKS GAP, WYOMING  

E-Print Network (OSTI)

;PROJECT OVERVIEW ·Site Location·Site Location ·Fremont , Wyoming ·Existing Uranium Mine Permit 381C·Existing Uranium Mine Permit 381C ·Historical Operation ·Western Nuclear Crooks Gap Project ·Mined 1956 ­ 1988 and Open Pit Mining ·Current Mine Permit (381C) ·Updating POO, Reclamation Plan & Bond ·Uranium Recovery

268

Spark gap switch with spiral gas flow  

DOE Patents (OSTI)

A spark gap switch having a contaminate removal system using an injected gas. An annular plate concentric with an electrode of the switch defines flow paths for the injected gas which form a strong spiral flow of the gas in the housing which is effective to remove contaminates from the switch surfaces. The gas along with the contaminates is exhausted from the housing through one of the ends of the switch.

Brucker, J.P.

1988-03-23T23:59:59.000Z

269

Gradiometric flux qubits with tunable gap  

E-Print Network (OSTI)

For gradiometric three-Josephson-junction flux qubits, we perform a systematic study on the tuning of the minimal transition frequency, the so-called qubit gap. By replacing one of the qubit's Josephson junctions by a dc SQUID, the critical current of this SQUID and, in turn, the qubit gap can be tuned in situ by a control flux threading the SQUID loop. We present spectroscopic measurements demonstrating a well-defined controllability of the qubit gap between zero and more than 10 GHz. In the future, this enables one to tune the qubit into and out of resonance with other superconducting quantum circuits, while operating the qubit at its symmetry point with optimal dephasing properties. The experimental data agree very well with model calculations based on the full qubit Hamiltonian. From a numerical fit, we determine the Josephson coupling and the charging energies of the qubit junctions. The derived values agree well with those measured for other junctions fabricated on the same chip. We also demonstrate the biasing of gradiometric flux qubits near the symmetry point by trapping an odd number of flux quanta in the gradiometer loop. In this way, we study the effect of the significant kinetic inductance, thereby obtaining valuable information for the qubit design.

M. J. Schwarz; J. Goetz; Z. Jiang; T. Niemczyk; F. Deppe; A. Marx; R. Gross

2012-10-15T23:59:59.000Z

270

Ion-gap sensing for engine control  

Science Conference Proceedings (OSTI)

This article reports that in addition to detecting misfire to conform with California onboard diagnostic (OBD II) regulations, Delco Electronics and Mecel AB engineers are looking at ion-gap sensing to control knock, A/F ratio, and other possible engine control parameters. The combustion of fuel in an engine cylinder produces ions. Detection of those ions by the spark plug (ion-gap sensing), and use of the resulting ion currents, has been employed in engine management systems since 1988. Saab introduced the first application, for cam-phase sensing. The main driving force for ion-gap sensing is OBD II requirements for 100% misfire detection at all speeds and loads. The technique has been expanded in subsequent applications to include misfire, knock, and pre-ignition detection and control, and more recently in combustion-ion detection using a capacitance-type, ion-current measurement method. Use of the ion current`s wave shape to control knock allows elimination of the separate piezoelectric type (PZT) sensor. Future applications could provide additional engine-control features including air/fuel ratio measurement and control.

NONE

1995-09-01T23:59:59.000Z

271

X-BAND KLYSTRON DEVELOPMENT AT SLAC  

Science Conference Proceedings (OSTI)

The development of X-band klystrons at SLAC originated with the idea of building an X-band Linear Collider in the late 1980's. Since then much effort has been expended in developing a reliable X-band Power source capable of delivering >50 MW RF power in pulse widths >1.5 {micro}s. I will report on some of the technical issues and design strategies which have led to the current SLAC klystron designs.

Vlieks, Arnold E.; /SLAC

2009-08-03T23:59:59.000Z

272

Origin of Precipitation and Dynamic Organization in Wavelike Precipitation Bands  

Science Conference Proceedings (OSTI)

Wavelike parallel precipitation bands, embedded in a layer of cirrus clouds, were studied with a vertically pointing millimetric Doppler radar. Their mean dimensions were 17 km between bands, a 50 km band length and a 6 km band width. Their ...

Richard Auria; Bernard Campistron

1987-11-01T23:59:59.000Z

273

Possible chiral bands in {sup 194}Tl  

Science Conference Proceedings (OSTI)

High spin states in {sup 194}Tl, excited through the {sup 181}Ta({sup 18}O,5n) fusion evaporation reaction, were studied using the AFRODITE array at iThemba LABS. Candidate chiral bands built on the {pi}h{sub 9/2} x {nu}i{sub 13/2}{sup 1} configuration were found. Furthermore these bands were observed through a band crossing caused by the excitation of a {nu}i{sub 13/2} pair. Above the band crossing the excitation energies remain close, suggesting that chirality may persist for the four quasiparticle configuration too.

Masiteng, P. L.; Ramashidzha, T. M.; Maliage, S. M.; Sharpey-Schafer, J. F.; Vymers, P. A. [iThemba LABS, P.O Box 722, 7129 (South Africa); University of the Western Cape, Private Bag X17, 7535 Bellville (South Africa); Lawrie, E. A.; Lawrie, J. J.; Bark, R. A.; Mullins, S. M.; Murray, S. H. T. [iThemba LABS, P.O Box 722, 7129 (South Africa); Kau, J.; Komati, F. [iThemba LABS, P.O Box 722, 7129 (South Africa); University of the North West, Private Bag X2046, 2735 Mafikeng (South Africa); Lindsay, R. [University of the Western Cape, Private Bag X17, 7535 Bellville (South Africa); Matamba, I. [University of Venda for Science and Technology, Thohoyandou (South Africa); Mutshena, P. [iThemba LABS, P.O Box 722, 7129 (South Africa); University of Venda for Science and Technology, Thohoyandou (South Africa); Zhang, Y. [iThemba LABS, P.O Box 722, 7129 (South Africa); University of Cape Town, Private Bag, 7701 Rondebosch (South Africa)

2011-10-28T23:59:59.000Z

274

Band engineering in dilute nitride and bismide semiconductor lasers  

E-Print Network (OSTI)

Highly mismatched semiconductor alloys such as GaNAs and GaBiAs have several novel electronic properties, including a rapid reduction in energy gap with increasing x and also, for GaBiAs, a strong increase in spin orbit- splitting energy with increasing Bi composition. We review here the electronic structure of such alloys and their consequences for ideal lasers. We then describe the substantial progress made in the demonstration of actual GaInNAs telecomm lasers. These have characteristics comparable to conventional InP-based devices. This includes a strong Auger contribution to the threshold current. We show, however, that the large spin-orbit-splitting energy in GaBiAs and GaBiNAs could lead to the suppression of the dominant Auger recombination loss mechanism, finally opening the route to e?fficient temperature-stable telecomm and longer wavelength lasers with significantly reduced power consumption.

Christopher A. Broderick; Muhammad Usman; Stephen J. Sweeney; Eoin P. O'Reilly

2012-08-31T23:59:59.000Z

275

Multi-band OFDM UWB receiver with narrowband interference suppression  

E-Print Network (OSTI)

A multi band orthogonal frequency division multiplexing (MB-OFDM) compatible ultra wideband (UWB) receiver with narrowband interference (NBI) suppression capability is presented. The average transmit power of UWB system is limited to -41.3 dBm/MHz in order to not interfere existing narrowband systems. Moreover, it must operate even in the presence of unintentional radiation of FCC Class-B compatible devices. If this unintentional radiation resides in the UWB band, it can jam the communication. Since removing the interference in digital domain requires higher dynamic range of analog front-end than removing it in analog domain, a programmable analog notch filter is used to relax the receiver requirements in the presence of NBI. The baseband filter is placed before the variable gain amplifier (VGA) in order to reduce the signal swing at the VGA input. The frequency hopping period of MB-OFDM puts a lower limit on the settling time of the filter, which is inverse proportional to notch bandwidth. However, notch bandwidth should be low enough not to attenuate the adjacent OFDM tones. Since these requirements are contradictory, optimization is needed to maximize overall performance. Two different NBI suppression schemes are tested. In the first scheme, the notch filter is operating for all sub-bands. In the second scheme, the notch filter is turned on during the sub-band affected by NBI. Simulation results indicate that the UWB system with the first and the second suppression schemes can handle up to 6 dB and 14 dB more NBI power, respectively. The results of this work are not limited to MB-OFDM UWB system, and can be applied to other frequency hopping systems.

Kelleci, Burak

2007-12-01T23:59:59.000Z

276

Electronic band structures and photovoltaic properties of MWO{sub 4} (M=Zn, Mg, Ca, Sr) compounds  

Science Conference Proceedings (OSTI)

Divalent metal tungstates, MWO{sub 4}, with wolframite (M=Zn and Mg) and scheelite (M=Ca and Sr) structures were prepared using a conventional solid state reaction method. Their electronic band structures were investigated by a combination of electronic band structure calculations and electrochemical measurements. From these investigations, it was found that the band structures (i.e. band positions and band gaps) of the divalent metal tungstates were significantly influenced by their crystal structural environments, such as the W-O bond length. Their photovoltaic properties were evaluated by applying to the working electrodes for dye-sensitized solar cells. The dye-sensitized solar cells employing the wolframite-structured metal tungstates (ZnWO{sub 4} and MgWO{sub 4}) exhibited better performance than those using the scheelite-structured metal tungstates (CaWO{sub 4} and SrWO{sub 4}), which was attributed to their enhanced electron transfer resulting from their appropriate band positions. - Graphical abstract: The electronic band structures of divalent metal tungstates are described from the combination of experimental results and theoretical calculations, and their electronic structure-dependent photovoltaic performances are also studied. Highlights: > MWO{sub 4} compounds with wolframite (M=Zn and Mg) and scheelite structure (M=Ca and Sr) were prepared. > Their electronic band structures were investigated by the calculations and the measurements. > Their photovoltaic properties were determined by the crystal and electronic structures.

Kim, Dong Wook, E-mail: dong0414@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744 (Korea, Republic of); Cho, In-Sun [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Shin, Seong Sik [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Lee, Sangwook [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744 (Korea, Republic of); Noh, Tae Hoon; Kim, Dong Hoe [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Jung, Hyun Suk [School of Advanced Materials Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Hong, Kug Sun, E-mail: kshongss@plaza.snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744 (Korea, Republic of)

2011-08-15T23:59:59.000Z

277

Electrical apparatus lockout device  

DOE Patents (OSTI)

A simple lockout device for electrical equipment equipped with recessed power blades is described. The device comprises a face-plate (12) having a threaded member (14) attached thereto and apertures suitable for accommodating the power blades of a piece of electrical equipment, an elastomeric nose (16) abutting the face-plate having a hole for passage of the threaded member therethrough and power blade apertures in registration with those of the face-plate, a block (20) having a recess (34) in its forward face for receiving at least a portion of the hose, a hole therein for receiving the threaded member and an integral extension (26) extending from its rear face. A thumb screw (22) suitable for turning with the hands and having internal threads suitable for engaging the threaded member attached to the face-plate is inserted into a passage in the integral extension to engage the threaded member in such a fashion that when the device is inserted over the recessed power blades of a piece of electrical equipment and the thumb screw (22) tightened, the elastomeric nose (16) is compressed between the face-plate (12) and the block (20) forcing it to expand laterally thereby securing the device in the recess and precluding the accidental or intentional energization of the piece of equipment by attachment of a power cord to the recessed power blades. Means are provided in the interval extension and the thumb screw for the attachment of a locking device (46) which will satisfy OSHA standards.

Gonzales, Rick (Chesapeake, VA)

1999-01-01T23:59:59.000Z

278

Spectral tailoring device  

DOE Patents (OSTI)

A spectral tailoring device for altering the neutron energy spectra and flux of neutrons in a fast reactor thereby selectively to enhance or inhibit the transmutation rate of a target metrical to form a product isotope. Neutron moderators, neutron filters, neutron absorbers and neutron reflectors may be used as spectral tailoring devices. Depending on the intended use for the device, a member from each of these four classes of materials could be used singularly, or in combination, to provide a preferred neutron energy spectra and flux of the neutrons in the region of the target material. In one embodiment of the invention, an assembly is provided for enhancing the production of isotopes, such as cobalt 60 and gadolinium 153. In another embodiment of the invention, a spectral tailoring device is disposed adjacent a target material which comprises long lived or volatile fission products and the device is used to shift the neutron energy spectra and flux of neutrons in the region of the fission products to preferentially transmute them to produce a less volatile fission product inventory. 6 figs.

Brager, H.R.; Schenter, R.E.; Carter, L.L.; Karnesky, R.A.

1987-08-05T23:59:59.000Z

279

Technical Standards, GENII- Gap Analsis - May 3, 2004 | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Technical Standards, GENII- Gap Analsis - May 3, 2004 Technical Standards, GENII- Gap Analsis - May 3, 2004 Technical Standards, GENII- Gap Analsis - May 3, 2004 May 3, 2004 Software Quality Assurance Improvement Plan: GENII Gap Analysis The GENII software, for radiological dispersion and consequence analysis, is one of the codes designated for the toolbox. To determine the actions needed to bring the GENII code into compliance with the SQA qualification criteria, and develop an estimate of the resources required to perform the upgrade, the Implementation Plan has committed to sponsoring a code-specific gap analysis document. Technical Standards, GENII- Gap Analsis More Documents & Publications Guidance on GENII computer code - July 6, 2004 Technical Standards, ALOHA-Gap Analysis - May 3, 2004 Technical Standards, MELCOR - Gap Analysis - May 3

280

Vehicle Codes and Standards: Overview and Gap Analysis  

DOE Green Energy (OSTI)

This report identifies gaps in vehicle codes and standards and recommends ways to fill the gaps, focusing on six alternative fuels: biodiesel, natural gas, electricity, ethanol, hydrogen, and propane.

Blake, C.; Buttner, W.; Rivkin, C.

2010-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Hydraulic Physical Modeling and Observations of a Severe Gap Wind  

Science Conference Proceedings (OSTI)

Strong gap winds in Howe Sound, British Columbia, are simulated using a small-scale physical model. Model results are presented and compared with observations recorded in Howe Sound during a severe gap wind event in December 1992. Hydraulic ...

Timothy D. Finnigan; Jason A. Vine; Peter L. Jackson; Susan E. Allen; Gregory A. Lawrence; Douw G. Steyn

1994-12-01T23:59:59.000Z

282

Approximate expressions for polar gap electric field of pulsars  

E-Print Network (OSTI)

We derive easy-to-handle approximations for the polar gap electric field due to inertial frame dragging as derived by Harding & Muslimov 1998. A simple formula valid for polar gap height comparable to the polar cap radius is presented.

J. Dyks; B. Rudak

2000-06-19T23:59:59.000Z

283

Pendulum detector testing device  

DOE Patents (OSTI)

A detector testing device is described which provides consistent, cost-effective, repeatable results. The testing device is primarily constructed of PVC plastic and other non-metallic materials. Sensitivity of a walk-through detector system can be checked by: (1) providing a standard test object simulating the mass, size and material content of a weapon or other contraband, (2) suspending the test object in successive positions, such as head, waist and ankle levels, simulating where the contraband might be concealed on a person walking through the detector system; and (3) swinging the suspended object through each of the positions, while operating the detector system and observing its response. The test object is retained in a holder in which the orientation of the test device or target can be readily changed, to properly complete the testing requirements. 5 figs.

Gonsalves, J.M.

1997-09-30T23:59:59.000Z

284

REACTOR CONTROL DEVICE  

DOE Patents (OSTI)

A wholly mechanical compact control device is designed for automatically rendering the core of a fission reactor subcritical in response to core temperatures in excess of the design operating temperature limit. The control device comprises an expansible bellows interposed between the base of a channel in a reactor core and the inner end of a fuel cylinder therein which is normally resiliently urged inwardly. The bellows contains a working fluid which undergoes a liquid to vapor phase change at a temperature substantially equal to the design temperature limit. Hence, the bellows abruptiy expands at this limiting temperature to force the fuel cylinder outward and render the core subcritical. The control device is particularly applicable to aircraft propulsion reactor service. (AEC)

Graham, R.H.

1962-09-01T23:59:59.000Z

285

Electrochromic optical switching device  

DOE Patents (OSTI)

An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source. 3 figs.

Lampert, C.M.; Visco, S.J.

1992-08-25T23:59:59.000Z

286

Pendulum detector testing device  

DOE Patents (OSTI)

A detector testing device which provides consistent, cost-effective, repeatable results. The testing device is primarily constructed of PVC plastic and other non-metallic materials. Sensitivity of a walk-through detector system can be checked by: 1) providing a standard test object simulating the mass, size and material content of a weapon or other contraband, 2) suspending the test object in successive positions, such as head, waist and ankle levels, simulating where the contraband might be concealed on a person walking through the detector system; and 3) swinging the suspended object through each of the positions, while operating the detector system and observing its response. The test object is retained in a holder in which the orientation of the test device or target can be readily changed, to properly complete the testing requirements.

Gonsalves, John M. (Modesto, CA)

1997-01-01T23:59:59.000Z

287

Electrochromic optical switching device  

DOE Patents (OSTI)

An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source.

Lampert, Carl M. (El Sobrante, CA); Visco, Steven J. (Berkeley, CA)

1992-01-01T23:59:59.000Z

288

EXPERIMENTAL ANIMAL WATERING DEVICE  

SciTech Connect

A device for watering experimental animals confined in a battery of individual plastic enclosures is described. It consists of a rectangular plastic enclosure having a plurality of fluid-tight compartments, each with a drinking hole near the bottom and a filling hole on the top. The enclosure is immersed in water until filled, its drinking holes sealed with a strip of tape, and it is then placed in the battery. The tape sealing prevents the flow of water from the device, but permits animals to drink by licking the drinking holes. (AEC)

Finkel, M.P.

1964-04-01T23:59:59.000Z

289

Precision alignment device  

DOE Patents (OSTI)

Apparatus for providing automatic alignment of beam devices having an associated structure for directing, collimating, focusing, reflecting, or otherwise modifying the main beam. A reference laser is attached to the structure enclosing the main beam producing apparatus and produces a reference beam substantially parallel to the main beam. Detector modules containing optical switching devices and optical detectors are positioned in the path of the reference beam and are effective to produce an electrical output indicative of the alignment of the main beam. This electrical output drives servomotor operated adjustment screws to adjust the position of elements of the structure associated with the main beam to maintain alignment of the main beam. 5 figs.

Jones, N.E.

1988-03-10T23:59:59.000Z

290

Phononic crystal devices  

DOE Patents (OSTI)

Phononic crystals that have the ability to modify and control the thermal black body phonon distribution and the phonon component of heat transport in a solid. In particular, the thermal conductivity and heat capacity can be modified by altering the phonon density of states in a phononic crystal. The present invention is directed to phononic crystal devices and materials such as radio frequency (RF) tags powered from ambient heat, dielectrics with extremely low thermal conductivity, thermoelectric materials with a higher ratio of electrical-to-thermal conductivity, materials with phononically engineered heat capacity, phononic crystal waveguides that enable accelerated cooling, and a variety of low temperature application devices.

El-Kady, Ihab F. (Albuquerque, NM); Olsson, Roy H. (Albuquerque, NM)

2012-01-10T23:59:59.000Z

291

REMOTE CONTROLLED SWITCHING DEVICE  

DOE Patents (OSTI)

An electrical switching device which can be remotely controlled and in which one or more switches may be accurately operated at predetermined times or with predetermined intervening time intervals is described. The switching device consists essentially of a deck, a post projecting from the deck at right angles thereto, cam means mounted for rotation around said posts and a switch connected to said deck and actuated by said cam means. Means is provided for rotating the cam means at a constant speed and the switching apparatus is enclosed in a sealed container with external adjusting means and electrical connection elements.

Hobbs, J.C.

1959-02-01T23:59:59.000Z

292

Apparatus for loading a band saw blade  

DOE Patents (OSTI)

A band saw blade is loaded between pairs of guide wheels upon tensioning the blade by guiding the blade between pairs of spaced guide plates which define converging slots that converge toward the guide wheels. The approach is particularly useful in loading blades on underwater band saw machines used to cut radioactive materials. 2 figs.

Reeves, S.R.

1990-03-20T23:59:59.000Z

293

Apparatus for loading a band saw blade  

DOE Patents (OSTI)

A band saw blade is loaded between pairs of guide wheels upon tensioning the blade by guiding the blade between pairs of spaced guide plates which define converging slots that converge toward the guide wheels. The approach is particularly useful in loading blades on underwater band saw machines used to cut radioactive materials.

Reeves, Steven R. (49 Williams Ave., West Valley, NY 14171)

1990-01-01T23:59:59.000Z

294

RF design of X-band RF deflector for femtosecond diagnostics of LCLS electron beam  

Science Conference Proceedings (OSTI)

We designed a successful constant impedance traveling wave X-band rf deflector for electron beam diagnostics at the 14 GeV SLAC Linac Coherent Light Source (LCLS). This is the first practical deflector built with a waveguide coupler. The 1-meter rf deflector produces 24 MeV peak transverse kick when powered with 20 MW of 11.424 GHz rf. The design is based on our experience with high gradient X-band accelerating structures. Several deflectors of this design have been built at SLAC and are currently in use. Here we describe the design and distinguishing features of this device.

Dolgashev, Valery A.; Wang Juwen [SLAC National Accelerator Laboratory, Menlo Park, CA, 94025 (United States)

2012-12-21T23:59:59.000Z

295

Longwave Band-By-Band Cloud Radiative Effect and Its Application in GCM Evaluation  

Science Conference Proceedings (OSTI)

The cloud radiative effect (CRE) of each longwave (LW) absorption band of a GCM’s radiation code is uniquely valuable for GCM evaluation because 1) comparing band-by-band CRE avoids the compensating biases in the broadband CRE comparison and 2) ...

Xianglei Huang; Jason N. S. Cole; Fei He; Gerald L. Potter; Lazaros Oreopoulos; Dongmin Lee; Max Suarez; Norman G. Loeb

2013-01-01T23:59:59.000Z

296

Mathematical model and the dynamic simulation of an electromechanical rotary device. [SLENOID  

SciTech Connect

A mathematical model of an electro-mechanical rotary device is presented. This device contains a rotor, stator, and two spring-loaded arms which restrict the rotor motion. The desired action is the alignment of the rotor and the consequent movement of the arms. The SLENOID computer program for calculating the magnetic torque, air gap permeance, spring torque, damping effects, and motion of the rotor and arms is described. (LCL)

Emergy, J.D.

1980-02-01T23:59:59.000Z

297

Turbine blade tip gap reduction system  

DOE Patents (OSTI)

A turbine blade sealing system for reducing a gap between a tip of a turbine blade and a stationary shroud of a turbine engine. The sealing system includes a plurality of flexible seal strips extending from a pressure side of a turbine blade generally orthogonal to the turbine blade. During operation of the turbine engine, the flexible seal strips flex radially outward extending towards the stationary shroud of the turbine engine, thereby reducing the leakage of air past the turbine blades and increasing the efficiency of the turbine engine.

Diakunchak, Ihor S.

2012-09-11T23:59:59.000Z

298

RADIO RANGING DEVICE  

DOE Patents (OSTI)

A description is given of a super-regenerative oscillator ranging device provided with radiating and receiving means and being capable of indicating the occurrence of that distance between itself and a reflecting object which so phases the received echo of energy of a preceding emitted oscillation that the intervals between oscillations become uniform.

Bogle, R.W.

1960-11-22T23:59:59.000Z

299

RADIO RANGING DEVICE  

DOE Patents (OSTI)

A radio ranging device is described. It utilizes a super regenerative detector-oscillator in which echoes of transmitted pulses are received in proper phase to reduce noise energy at a selected range and also at multiples of the selected range.

Nieset, R.T.

1961-05-16T23:59:59.000Z

300

Electron beam device  

DOE Patents (OSTI)

This patent pertains to an electron beam device in which a hollow target is symmetrically irradiated by a high energy, pulsed electron beam about its periphery and wherein the outer portion of the target has a thickness slightly greater than required to absorb the electron beam pulse energy. (auth)

Beckner, E.H.; Clauser, M.J.

1975-08-12T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Medical Device Reliability BIOMATERIALS  

E-Print Network (OSTI)

of the U.S. healthcare industry, with annual sales exceeding $13 billion. In the past decade, nearly 3 to those found in explanted devices. Multilayer ceramic capacitors are the focus, as changes-grade ceramic capacitors. The Use Conditions Summary and the Failure Mode Effects Analysis are currently under

302

Energy absorption device  

DOE Patents (OSTI)

An energy absorbing device comprising two metal elements slip-fit together. The inner element has an enlarged portion thereupon which is forced, by a force overload to travel along the inside of the outer tube. The energy of the overload is absorbed by the forces of friction and deformation as the two elements are telescoped together.

Hertelendy, N.A.

1987-01-27T23:59:59.000Z

303

Simulating nanoscale semiconductor devices.  

SciTech Connect

The next generation of electronic devices will be developed at the nanoscale and molecular level, where quantum mechanical effects are observed. These effects must be accounted for in the design process for such small devices. One prototypical nanoscale semiconductor device under investigation is a resonant tunneling diode (RTD). Scientists are hopeful the quantum tunneling effects present in an RTD can be exploited to induce and sustain THz frequency current oscillations. To simulate the electron transport within the RTD, the Wigner-Poisson equations are used. These equations describe the time evolution of the electrons distribution within the device. In this paper, this model and a parameter study using this model will be presented. The parameter study involves calculating the steady-state current output from the RTD as a function of an applied voltage drop across the RTD and also calculating the stability of that solution. To implement the parameter study, the computational model was connected to LOCA (Library of Continuation Algorithms), a part of Sandia National Laboratories parallel solver project, Trilinos. Numerical results will be presented.

Salinger, Andrew Gerhard; Zhao, P. (North Carolina State University, Raleigh, NC); Woolard, D. L. (U. S. Army Research Laboratory, NC); Kelley, C. Tim (North Carolina State University, Raleigh, NC); Lasater, Matthew S. (North Carolina State University, Raleigh, NC)

2005-03-01T23:59:59.000Z

304

LOADING AND UNLOADING DEVICE  

DOE Patents (OSTI)

A device for loading and unloading fuel rods into and from a reactor tank through an access hole includes parallel links carrying a gripper. These links enable the gripper to go through the access hole and then to be moved laterally from the axis of the access hole to the various locations of the fuel rods in the reactor tank.

Treshow, M.

1960-08-16T23:59:59.000Z

305

ANNULAR IMPACTOR SAMPLING DEVICE  

DOE Patents (OSTI)

A high-rate air sampler capable of sampling alphaemitting particles as small as 0.5 microns is described. The device is a cylindrical shaped cup that fits in front of a suction tube and which has sticky grease coating along its base. Suction forces contaminated air against the periodically monitored particle absorbing grease.

Tait, G.W.C.

1959-03-31T23:59:59.000Z

306

Next Generation Nuclear Plant GAP Analysis Report  

DOE Green Energy (OSTI)

As a follow-up to the phenomena identification and ranking table (PIRT) studies conducted recently by NRC on next generation nuclear plant (NGNP) safety, a study was conducted to identify the significant 'gaps' between what is needed and what is already available to adequately assess NGNP safety characteristics. The PIRT studies focused on identifying important phenomena affecting NGNP plant behavior, while the gap study gives more attention to off-normal behavior, uncertainties, and event probabilities under both normal operation and postulated accident conditions. Hence, this process also involved incorporating more detailed evaluations of accident sequences and risk assessments. This study considers thermal-fluid and neutronic behavior under both normal and postulated accident conditions, fission product transport (FPT), high-temperature metals, and graphite behavior and their effects on safety. In addition, safety issues related to coupling process heat (hydrogen production) systems to the reactor are addressed, given the limited design information currently available. Recommendations for further study, including analytical methods development and experimental needs, are presented as appropriate in each of these areas.

Ball, Sydney J [ORNL; Burchell, Timothy D [ORNL; Corwin, William R [ORNL; Fisher, Stephen Eugene [ORNL; Forsberg, Charles W. [Massachusetts Institute of Technology (MIT); Morris, Robert Noel [ORNL; Moses, David Lewis [ORNL

2008-12-01T23:59:59.000Z

307

New Orleans brass band traditions and popular music : elements of style in the music of mama digdown's brass band and youngblood brass band.  

E-Print Network (OSTI)

?? This is research on the New Orleans Brass Band tradition. How popular music has influenced the bands repertoire and the style of music has… (more)

Driscoll, Matthew Thomas

2012-01-01T23:59:59.000Z

308

One-photon band gap engineering of borate glass doped with ZnO for photonics applications  

SciTech Connect

Lithium tungsten borate glass of the composition (0.56-x)B{sub 2}O{sub 3}-0.4Li{sub 2}O-xZnO-0.04WO{sub 3} (0 {<=}x{<=} 0.1 mol. %) is prepared for photonics applications. The glass is doped with ZnO to tune the glass absorption characteristics in a wide spectrum range (200-2500 nm). Chemical bond approach, including chemical structure, electronegativity, bond ionicity, nearest-neighbor coordination, and other chemical bonding aspect, is used to analyze and to explain the obtained glass properties such as: transmittance, absorption, electronic structure parameters (bandgap, Fermi level, and Urbach exciton-phonon coupling), Wannier free excitons excitation (applying Elliott's model), and two-photon absorption coefficient as a result of replacement of B{sub 2}O{sub 3} by ZnO.

Abdel-Baki, Manal [Glass Department, National Research Centre, Dokki 12311 Giza (Egypt); Abdel-Wahab, Fathy A.; El-Diasty, Fouad [Physics Department, Faculty of Science, Ain Shams University, Abbasia, 11566 Cairo (Egypt)

2012-04-01T23:59:59.000Z

309

Technical evaluation of a dual-junction same-band-gap amorphous silicon photovoltaic system at NREL  

DOE Green Energy (OSTI)

On December 7, 1992, a 1.8-kW{sub ac} utility-interconnect photovoltaic (PV) system using amorphous silicon modules was brought on-line at the National Renewable Energy Laboratory`s photovoltaic test site. This system was deployed to conduct an in-situ technical evaluation of the PV array (in a high voltage configuration) and system performance and reliability in a utility-interconnect application. The system is unique due to the installation of construction-grade insulation on the back of each PV module. This use of insulation is an attempt to levelize the annual array power output by elevating the operating temperature of the modules. This paper presents array and system performance data. Emphasis is placed on quantifying the effects of individual losses as well as seasonal changes on PV array and system performance.

Strand, T.; Mrig, L.; Hansen, R.; Emery, K.

1994-12-01T23:59:59.000Z

310

Effects of filling in CoSb[subscript 3]: Local structure, band gap, and phonons from first principles  

E-Print Network (OSTI)

We use ab initio computations to investigate the effect of filler ions on the properties of CoSb3 skutterudites. We analyze global and local structural effects of filling, using the Ba-filled system as an example. We show ...

Kozinsky, Boris

311

DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS  

E-Print Network (OSTI)

is placed above a light emitting diode (LED, 850 nm) array for the excitation of electron-hole pairs

Honsberg, Christiana

312

Gunshot triangulation device testing  

NLE Websites -- All DOE Office Websites (Extended Search)

Gunshot triangulation device testing Gunshot triangulation device testing Report to the Fermilab Community Advisory Board, Oct. 28, 2010 The Fermilab security director outlined for the board last month a recurring problem of people shooting guns near the edges of the laboratory and bullets coming onto the site. Fermilab is installing a system to triangulate the gunshots to improve police response time. This will require a set-up calibration of two dozen gunshots during a total of 6 minutes at the laboratory site. The board was asked for recommendations about how and whom to inform of the test firing. In response to the board discussion, Fermilab plans to take the following actions: ï‚· The test firing will occur during the mid-day of a week day to minimize the number of residents

313

PRESSURE SENSING DEVICE  

DOE Patents (OSTI)

This device is primarily useful as a switch which is selectively operable to actuate in response to either absolute or differential predetermined pressures. The device generally comprises a pressure-tight housing divided by a movable impermeable diaphragm into two chambers, a reference pressure chamber and a bulb chamber containing the switching means and otherwise filled with an incompressible non-conducting fluid. The switch means comprises a normally collapsed bulb having an electrically conductive outer surface and a vent tube leading to the housing exterior. The normally collapsed bulb is disposed such that upon its inflation, respensive to air inflow from the vent, two contacts fixed within the bulb chamber are adapted to be electrically shorted by the conducting outer surface of the bulb.

Pope, K.E.

1959-12-15T23:59:59.000Z

314

Nuclear reactor safety device  

DOE Patents (OSTI)

A safety device is disclosed for use in a nuclear reactor for axially repositioning a control rod with respect to the reactor core in the event of an upward thermal excursion. Such safety device comprises a laminated helical ribbon configured as a tube-like helical coil having contiguous helical turns with slidably abutting edges. The helical coil is disclosed as a portion of a drive member connected axially to the control rod. The laminated ribbon is formed of outer and inner laminae. The material of the outer lamina has a greater thermal coefficient of expansion than the material of the inner lamina. In the event of an upward thermal excursion, the laminated helical coil curls inwardly to a smaller diameter. Such inward curling causes the total length of the helical coil to increase by a substantial increment, so that the control rod is axially repositioned by a corresponding amount to reduce the power output of the reactor.

Hutter, Ernest (Wilmette, IL)

1986-01-01T23:59:59.000Z

315

Wire brush fastening device  

DOE Patents (OSTI)

A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus.

Meigs, Richard A. (East Concord, NY)

1995-01-01T23:59:59.000Z

316

GAS DISCHARGE DEVICES  

DOE Patents (OSTI)

An apparatus utilized in introducing tritium gas into envelope of a gas discharge device for the purpose f maintaining the discharge path in ionized condition is described. ln addition to the cathode and anode, the ischarge device contains a zirconium or tantalum ilament arranged for external excitation and a metallic seed containing tritium, and also arranged to have a current passed through it. Initially, the zirconium or tantalum filament is vaporized to deposit its material adjacent the main discharge region. Then the tritium gas is released and, due to its affinity for the first released material, it deposits in the region of the main discharge where it is most effective in maintaining the discharge path in an ionized condition.

Jefferson, S.

1958-11-11T23:59:59.000Z

317

Regenerative braking device  

DOE Patents (OSTI)

Disclosed are several embodiments of a regenerative braking device for an automotive vehicle. The device includes a plurality of rubber rollers (24, 26) mounted for rotation between an input shaft (14) connectable to the vehicle drivetrain and an output shaft (16) which is drivingly connected to the input shaft by a variable ratio transmission (20). When the transmission ratio is such that the input shaft rotates faster than the output shaft, the rubber rollers are torsionally stressed to accumulate energy, thereby slowing the vehicle. When the transmission ratio is such that the output shaft rotates faster than the input shaft, the rubber rollers are torsionally relaxed to deliver accumulated energy, thereby accelerating or driving the vehicle.

Hoppie, Lyle O. (Birmingham, MI)

1982-01-12T23:59:59.000Z

318

Light modulating device  

DOE Patents (OSTI)

In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity are disclosed. 1 fig.

Rauh, R.D.; Goldner, R.B.

1989-12-26T23:59:59.000Z

319

Support and maneuvering device  

DOE Patents (OSTI)

A support and maneuvering device includes an elongated flexible inflatable enclosure having a fixed end and a movable end. The movable end is collapsible toward the fixed end to a contracted position when the enclosure is in a noninflated condition. Upon inflation, the movable end is movable away from the fixed end to an extended position. The movable end includes means for mounting an article such as a solar reflector thereon. The device also includes a plurality of position controlling means disposed about the movable end to effect adjusting movement of portions thereof by predetermined amounts and for controlling an angle at which the article disposed at the movable end is oriented. The plurality of position controlling means limits a suitable number degrees of freedom of the movable end for transmitting a steering motion thereto and for controlling the position thereof. 9 figs.

Wood, R.L.

1987-03-23T23:59:59.000Z

320

Microelectromechanical safe arm device  

SciTech Connect

Microelectromechanical (MEM) apparatus and methods for operating, for preventing unintentional detonation of energetic components comprising pyrotechnic and explosive materials, such as air bag deployment systems, munitions and pyrotechnics. The MEM apparatus comprises an interrupting member that can be moved to block (interrupt) or complete (uninterrupt) an explosive train that is part of an energetic component. One or more latching members are provided that engage and prevent the movement of the interrupting member, until the one or more latching members are disengaged from the interrupting member. The MEM apparatus can be utilized as a safe and arm device (SAD) and electronic safe and arm device (ESAD) in preventing unintentional detonations. Methods for operating the MEM apparatus include independently applying drive signals to the actuators coupled to the latching members, and an actuator coupled to the interrupting member.

Roesler, Alexander W. (Tijeras, NM)

2012-06-05T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Tire deflation device  

Science Conference Proceedings (OSTI)

A tire deflation device includes (1) a component having a plurality of bores, (2) a plurality of spikes removably insertable into the plurality of bores and (3) a keeper within each among the plurality of bores, the keeper being configured to contact a sidewall surface of a spike among the plurality of spikes and to exert force upon the sidewall surface. In an embodiment, the tire deflation device includes (a) a component including a bore in a material, the bore including a receiving region, a sidewall surface and a base surface, (b) a channel extending from the sidewall surface into the material, (c) a keeper having a first section housed within the channel and a second section which extends past the sidewall surface into the receiving region, and (d) a spike removably insertable into the bore.

Barker, Stacey G. (Idaho Falls, ID)

2010-01-05T23:59:59.000Z

322

Wire brush fastening device  

DOE Patents (OSTI)

A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus.

Meigs, R.A.

1993-08-31T23:59:59.000Z

323

Support and maneuvering device  

DOE Patents (OSTI)

A support and maneuvering device includes an elongated flexible inflatable enclosure having a fixed end and a movable end. The movable end is collapsible toward the fixed end to a contracted position when the enclosure is in a noninflated condition. Upon inflation, the movable end is movable away from the fixed end to an extended position. The movable end includes means for mounting an article such as a solar reflector thereon. The device also includes a plurality of position controlling means disposed about the movable end to effect adjusting movement of portions thereof by predetermined amounts and for controlling an angle at which the article disposed at the movable end is oriented. The plurality of position controlling means limits a suitable number degrees of freedom of the movable end for transmitting a steering motion thereto and for controlling the position thereof.

Wood, Richard L. (Arvada, CO)

1988-01-01T23:59:59.000Z

324

Wire brush fastening device  

DOE Patents (OSTI)

A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus. 13 figs.

Meigs, R.A.

1995-09-19T23:59:59.000Z

325

Cable shield connecting device  

DOE Patents (OSTI)

A cable shield connecting device for installation on a high voltage cable of the type having a metallic shield, the device including a relatively conformable, looped metal bar for placement around a bared portion of the metallic shield to extend circumferentially around a major portion of the circumference of the metallic shield while being spaced radially therefrom, a plurality of relatively flexible metallic fingers affixed to the bar, projecting from the bar in an axial direction and spaced circumferentially along the bar, each finger being attached to the metallic shield at a portion located remote from the bar to make electrical contact with the metallic shield, and a connecting conductor integral with the bar.

Silva, Frank A. (Basking Ridge, NJ)

1979-01-01T23:59:59.000Z

326

Battery loading device  

SciTech Connect

A battery loading device for loading a power source battery, built in small appliances having a battery loading chamber for selectively loading a number of cylindrical unit batteries or a one body type battery having the same voltage as a number of cylindrical unit batteries, whereby the one body type battery and the battery loading chamber are shaped similarly and asymmetrically in order to prevent the one body type battery from being inserted in the wrong direction.

Phara, T.; Suzuki, M.

1984-08-28T23:59:59.000Z

327

Relativistic electron beam device  

DOE Patents (OSTI)

A design is given for an electron beam device for irradiating spherical hydrogen isotope bearing targets. The accelerator, which includes hollow cathodes facing each other, injects an anode plasma between the cathodes and produces an approximately 10 nanosecond, megajoule pulse between the anode plasma and the cathodes. Targets may be repetitively positioned within the plasma between the cathodes, and accelerator diode arrangement permits materials to survive operation in a fusion power source. (auth)

Freeman, J.R.; Poukey, J.W.; Shope, S.L.; Yonas, G.

1975-07-01T23:59:59.000Z

328

Residual gas analysis device  

SciTech Connect

A system is provided for testing the hermeticity of a package, such as a microelectromechanical systems package containing a sealed gas volume, with a sampling device that has the capability to isolate the package and breach the gas seal connected to a pulse valve that can controllably transmit small volumes down to 2 nanoliters to a gas chamber for analysis using gas chromatography/mass spectroscopy diagnostics.

Thornberg, Steven M. (Peralta, NM)

2012-07-31T23:59:59.000Z

329

Hybrid electroluminescent devices  

DOE Patents (OSTI)

A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

Shiang, Joseph John (Niskayuna, NY); Duggal, Anil Raj (Niskayuna, NY); Michael, Joseph Darryl (Schenectady, NY)

2010-08-03T23:59:59.000Z

330

CURRENT STATUS OF INSERTION DEVICE DEVELOPMENT AT THE NSLS-II AND ITS FUTURE PLANS  

Science Conference Proceedings (OSTI)

National Synchrotron Light Source-II (NSLS-II) project is currently under construction. Procurement of various insertion devices (IDs) has begun. This ring assumes a very high beam stability requirement which imposes tighter field specifications on insertion devices (IDs) compared to the rings of previous generation. The state of the art ID Magnetic Measurement Facility is being set up in order to be able to certify the stringent requirements on the magnetic field of NSLS-II IDs. The IDs in the project baseline scope include six 3.5m long damping wigglers (DWs) with 100mm period length and 15mm pole gap, two 2.0m Elliptically Polarizing Undulator (EPU) with 49mm period and 11.5mm minimum magnetic gap, two 3.0m long 20mm period and one 1.5m long 21mm period IVU, which the minimum gap of these is 5mm and 5.5mm, respectively. Recently a special device for inelastic X-ray scattering (IXS) beamline has been added to the collection of baseline devices. Three pole wigglers with a 28mm magnetic gap and a peak field over 1 Tesla will be utilized to accommodate the users of the type of radiation which is currently produced with bending magnets at the NSLS.

Tanabe, T.; Chubar, O.; Corwin, T.; Harder, D.A.; He, P.; Kitegi, C.; Rank, J.; Rhein, C.; Rakowsky, G.; Spataro, C.

2011-03-28T23:59:59.000Z

331

Thermophotovoltaic energy conversion device  

DOE Patents (OSTI)

A thermophotovoltaic device and a method for making the thermophotovoltaic device are disclosed. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used. 1 fig.

Charache, G.W.; Baldasaro, P.F.; Egley, J.L.

1998-05-19T23:59:59.000Z

332

Thermophotovoltaic energy conversion device  

DOE Patents (OSTI)

A thermophotovoltaic device and a method for making the thermophotovoltaic device. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used.

Charache, Greg W. (Clifton Park, NY); Baldasaro, Paul F. (Clifton Park, NY); Egley, James L. (Burnt Hills, NY)

1998-01-01T23:59:59.000Z

333

Sectional device handling tool  

DOE Patents (OSTI)

Apparatus for remotely handling a device in an irradiated underwater environment includes a plurality of tubular sections interconnected end-to-end to form a handling structure, the bottom section being adapted for connection to the device. A support section is connected to the top tubular section and is adapted to be suspended from an overhead crane. Each section is flanged at its opposite ends. Axially retractable bolts in each bottom flange are threadedly engageable with holes in the top flange of an adjacent section, each bolt being biased to its retracted position and retained in place on the bottom flange. Guide pins on each top flange cooperate with mating holes on adjacent bottom flanges to guide movement of the parts to the proper interconnection orientation. Each section carries two hydraulic line segments provided with quick-connect/disconnect fittings at their opposite ends for connection to the segments of adjacent tubular sections upon interconnection thereof to form control lines which are connectable to the device and to an associated control console.

Candee, Clark B. (Monroeville, PA)

1988-07-12T23:59:59.000Z

334

Pseudogap and Superconducting Gap in High-Temperature Superconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

Pseudogap and Superconducting Gap in Pseudogap and Superconducting Gap in High-Temperature Superconductors Two decades after the discovery of first high temperature superconductors, the microscopic mechanism of high-Tc superconductivity remains elusive. In conventional superconductors, it has been well established that electrons form so-called "Cooper pairs" to give rise to superconductivity. The pair binding manifests itself as an energy gap in many spectroscopic measurements. This energy gap, known as superconducting gap, appears at the superconducting transition temperature Tc where the resistance also vanishes. For high temperature superconductors, the story is more complicated. Over a wide region of compositions and temperatures, there exists an energy gap well above Tc. This energy gap is called pseudogap [1], because there is no direct correlation to the superconducting transition. The origin of this pseudogap and its relation to the superconducting gap are believed to hold the key for understanding the mechanism of high-Tc superconductivity - one of the outstanding problems in condensed matter physics. In this regard, researchers Kiyohisa Tanaka and Wei-Sheng Lee, along with their co-workers in Prof. Zhi-Xun Shen's group at Stanford University, have recently made an important discovery about the coexistence of two distinct energy gaps that have opposite doping dependence. Their observation not only provides a natural explanation for the contradictory results about the superconducting gap deduced from different experimental techniques, but also has profound implications on the mechanism of high-Tc superconductivity.

335

ARM - Campaign Instrument - s-band-profiler  

NLE Websites -- All DOE Office Websites (Extended Search)

govInstrumentss-band-profiler govInstrumentss-band-profiler Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign Instrument : NOAA S-band (2835 Mhz) Profiler (S-BAND-PROFILER) Instrument Categories Cloud Properties, Atmospheric Profiling Campaigns CRYSTAL-FACE [ Download Data ] Off Site Campaign : various, including non-ARM sites, 2002.06.26 - 2002.08.01 Midlatitude Continental Convective Clouds Experiment (MC3E): Multi-Frequency Profilers [ Download Data ] Southern Great Plains, 2011.04.22 - 2011.06.06 Tropical Warm Pool - International Cloud Experiment (TWP-ICE) [ Download Data ] Tropical Western Pacific, 2006.01.21 - 2006.02.13 Primary Measurements Taken The following measurements are those considered scientifically relevant. Refer to the datastream (netcdf) file headers for the list of all available

336

Elastic Turbulence in Shear Banding Wormlike Micelles  

E-Print Network (OSTI)

We study the dynamics of the Taylor-Couette flow of shear banding wormlike micelles. We focus on the high shear rate branch of the flow curve and show that for sufficiently high Weissenberg numbers, this branch becomes ...

Fardin, Marc-Antoine

337

Observations and Modeling of Banded Orographic Convection  

Science Conference Proceedings (OSTI)

Radar images and numerical simulations of three shallow convective precipitation events over the Coastal Range in western Oregon are presented. In one of these events, unusually well-defined quasi-stationary banded formations produced large ...

Daniel J. Kirshbaum; Dale R. Durran

2005-05-01T23:59:59.000Z

338

Medical Device Interoperability The lack of interoperability between medical devices  

E-Print Network (OSTI)

Medical Device Interoperability The lack of interoperability between medical devices can lead to preventable medical errors and potentially serious inefficiencies that could otherwise be avoided. Overview an accurate diagnostic and treatment discipline, medical devices are playing an ever-increasing role

339

Control Banding and Nanotechnology Synergist  

Science Conference Proceedings (OSTI)

The average Industrial Hygienist (IH) loves a challenge, right? Okay, well here is one with more than a few twists. We start by going through the basics of a risk assessment. You have some chemical agents, a few workers, and the makings of your basic exposure characterization. However, you have no occupational exposure limit (OEL), essentially no toxicological basis, and no epidemiology. Now the real handicap is that you cannot use sampling pumps, cassettes, tubes, or any of the media in your toolbox, and the whole concept of mass-to-dose is out the window, even at high exposure levels. Of course, by the title, you knew we were talking about nanomaterials (NM). However, we wonder how many IHs know that this topic takes everything you know about your profession and turns it upside down. It takes the very foundations that you worked so hard in college and in the field to master and pulls it out from underneath you. It even takes the gold standard of our profession, the quantitative science of exposure assessment, and makes it look pretty darn rusty. Now with NM there is the potential to get some aspect of quantitative measurements, but the instruments are generally very expensive and getting an appropriate workplace personal exposure measurement can be very difficult if not impossible. The potential for workers getting exposures, however, is very real, as evidenced by a recent publication reporting worker exposures to polyacrylate nanoparticles in a Chinese factory (Song et al. 2009). With something this complex and challenging, how does a concept as simple as Control Banding (CB) save the day? Although many IHs have heard of CB, most of their knowledge comes from its application in the COSHH Essentials toolkit. While there is conflicting published research on COSHH Essentials and its value for risk assessments, almost all of the experts agree that it can be useful when no OELs are available (Zalk and Nelson 2008). It is this aspect of CB, its utility with uncertainty, that attracted international NM experts to recommend this qualitative risk assessment approach for NM. However, since their CB recommendation was only in theory, we took on the challenge of developing a working toolkit, the CB Nanotool (see Zalk et al. 2009 and Paik et al. 2008), as a means to perform a risk assessment and protect researchers at the Lawrence Livermore National Laboratory. While it's been acknowledged that engineered NM have potentially endless benefits for society, it became clear to us that the very properties that make nanotechnology so useful to industry could also make them dangerous to humans and the environment. Among the uncertainties and unknowns with NM are: the contribution of their physical structure to their toxicity, significant differences in their deposition and clearance in the lungs when compared to their parent material (PM), a lack of agreement on the appropriate indices for exposure to NM, and very little background information on exposure scenarios or populations at risk. Part of this lack of background information can be traced to the lack of risk assessments historically performed in the industry, with a recent survey indicating that 65% of companies working with NM are not doing any kind of NM-specific risk assessment as they focus on traditional PM methods for IH (Helland et al. 2009). The good news is that the amount of peer-reviewed publications that address environmental, health and safety aspects of NM has been increasing over the last few years; however, the percentage of these that address practical methods to reduce exposure and protect workers is orders of magnitude lower. Our intent in developing the CB Nanotool was to create a simplified approach that would protect workers while unraveling the mysteries of NM for experts and non-experts alike. Since such a large part of the toxicological effects of both the physical and chemical properties of NM were unknown, not to mention changing logarithmically as new NM research continues growing, we needed to account for this lack of information as part of the CB Nano

Zalk, D; Paik, S

2009-12-15T23:59:59.000Z

340

Dipole Bands in {sup 196}Hg  

Science Conference Proceedings (OSTI)

High spin states in {sup 196}Hg have been populated in the {sup 198}Pt({alpha},6n) reaction at 65 MeV and the level scheme has been extended. A new dipole band has been observed and a previously observed dipole has been confirmed. Excitation energies, spins and parities of these bands were determined from DCO ratio and linear polarization measurements. Possible quasiparticle excitations responsible for these structures are discussed.

Lawrie, J. J.; Lawrie, E. A.; Newman, R. T.; Sharpey-Schafer, J. F.; Smit, F. D. [iThemba LABS, PO Box 722, Somerset West 7129 (South Africa); Msezane, B. [iThemba LABS, PO Box 722, Somerset West 7129 (South Africa); Physics Department, University of Zululand, Private Bag X1001, Kwadlangezwa 3886 (South Africa); Benatar, M.; Mabala, G. K.; Mutshena, K. P. [iThemba LABS, PO Box 722, Somerset West 7129 (South Africa); Physics Department, University of Cape Town, Rondebosch 7700 (South Africa); Federke, M.; Mullins, S. M. [Physics Department, University of Cape Town, Rondebosch 7700 (South Africa); Ncapayi, N. J.; Vymers, P. [iThemba LABS, PO Box 722, Somerset West 7129 (South Africa); Physics Department, University of the Western Cape, Private Bag X17, Belleville 7535 (South Africa)

2011-10-28T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Arc voltage distribution skewness as an indicator of electrode gap during vacuum arc remelting  

DOE Patents (OSTI)

The electrode gap of a VAR is monitored by determining the skewness of a distribution of gap voltage measurements. A decrease in skewness indicates an increase in gap and may be used to control the gap.

Williamson, Rodney L. (Albuquerque, NM); Zanner, Frank J. (Sandia Park, NM); Grose, Stephen M. (Glenwood, WV)

1998-01-01T23:59:59.000Z

342

Performance characteristics of a perforated shadow band under clear sky conditions  

SciTech Connect

A perforated, non-rotating shadow band is described for separating global solar irradiance into its diffuse and direct normal components using a single pyranometer. Whereas shadow bands are normally solid so as to occult the sensor of a pyranometer throughout the day, the proposed band has apertures cut from its circumference to intermittently expose the instrument sensor at preset intervals. Under clear sky conditions the device produces a saw tooth waveform of irradiance data from which it is possible to reconstruct separate global and diffuse curves. The direct normal irradiance may then be calculated giving a complete breakdown of the irradiance curves without need of a second instrument or rotating shadow band. This paper describes the principle of operation of the band and gives a mathematical model of its shading mask based on the results of an optical ray tracing study. An algorithm for processing the data from the perforated band system is described and evaluated. In an extended trial conducted at NREL's Solar Radiation Research Laboratory, the band coupled with a thermally corrected Eppley PSP produced independent curves for diffuse, global and direct normal irradiance with low mean bias errors of 5.6 W/m{sup 2}, 0.3 W/m{sup 2} and -2.6 W/m{sup 2} respectively, relative to collocated reference instruments. Random uncertainties were 9.7 W/m{sup 2} (diffuse), 17.3 W/m{sup 2} (global) and 19.0 W/m{sup 2} (direct). When the data processing algorithm was modified to include the ray trace model of sensor exposure, uncertainties increased only marginally, confirming the effectiveness of the model. Deployment of the perforated band system can potentially increase the accuracy of data from ground stations in predominantly sunny areas where instrumentation is limited to a single pyranometer. (author)

Brooks, Michael J. [School of Mechanical Engineering, University of KwaZulu-Natal, Durban (South Africa)

2010-12-15T23:59:59.000Z

343

Energy Management on Handheld Devices  

Science Conference Proceedings (OSTI)

Handheld devices are becoming ubiquitous and as their capabilities increase, they are starting to displace laptop computers - much as laptop computers have displaced desktop computers in many roles. Handheld devices are evolving from today's PDAs, organizers, ...

Marc A Viredaz; Lawrence S Brakmo; William R Hamburgen

2003-10-01T23:59:59.000Z

344

Device for separating a mixture  

SciTech Connect

A device is described for separating a mixture of, for example, oil and water consists of a number of elements treating the mixture in stages, said elements being arranged in overlying position in order to manufacture a compact device.

Koot, T.A.; Verpalen, W.A.

1981-05-05T23:59:59.000Z

345

GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP  

Science Conference Proceedings (OSTI)

We report on the epitaxial growth of an AlSb/InAs heterostructure on a (001) GaP substrate. We investigate the conditions for the most efficient relaxation of GaSb islands on GaP. In particular, we show that the GaP surface treatment and the growth temperature are crucial for the formation of a two-dimensional periodic array of 90 deg. misfit dislocations at the episubstrate interface. With this relaxation process, an AlSb/InAs heterostructure exhibiting a room temperature mobility of 25 500 cm{sup 2} V{sup -1} s{sup -1} on GaP is demonstrated. This result paves the way to the integration of Sb-based devices on Si substrates through the use of GaP/Si templates.

El Kazzi, S.; Desplanque, L.; Coinon, C.; Wallart, X. [Institut d'Electronique, de Microelectronique, et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d'Ascq Cedex (France); Wang, Y.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Marechal Juin, 14050 Caen Cedex (France)

2010-11-08T23:59:59.000Z

346

The influence of the band structure of epitaxial graphene on SiC on the transistor characteristics  

E-Print Network (OSTI)

of conductivity on carrier density from the view point of few-layer graphene energy band structure. Our analysis evidence based on electrical device characteristics for the theoretically proposed energy dispersion a simple semiclassical model of electrical transport in graphene, and explain the sub-linear dependence

Feenstra, Randall

347

Medical Devices Metrology and Standards  

Science Conference Proceedings (OSTI)

... Medical Devices Metrology and Standards Needs (Download the flyer in pdf ... Standard and Metrology Needs for Surgical Robotics, presented by ...

2013-07-18T23:59:59.000Z

348

Limb Prosthetics Services and Devices  

Science Conference Proceedings (OSTI)

... of the field of biomechatronics, the science of fusing mechanical devices with human muscle, skeleton ... Growing Physical Health Consciousness. ...

2011-08-02T23:59:59.000Z

349

Device location summary - piton event  

SciTech Connect

This article describes the depth dimensions for the Piton Event Yellow device, which was fired on May 28, 1970.

Wondolowski, F.

1970-05-28T23:59:59.000Z

350

Software Quality Assurance Improvment Plan: CFAST Gap Analysis, Final Report  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

EH-4.2.1.3-CFAST-Gap Analysis EH-4.2.1.3-CFAST-Gap Analysis Defense Nuclear Facilities Safety Board Recommendation 2002-1 Software Quality Assurance Improvement Plan Commitment 4.2.1.3: Software Quality Assurance Improvement Plan: CFAST Gap Analysis Final Report U.S. Department of Energy Office of Environment, Safety and Health 1000 Independence Ave., S.W. Washington, DC 20585-2040 May 2004 CFAST Gap Analysis May 2004 Final Report ii INTENTIONALLY BLANK CFAST Gap Analysis May 2004 Final Report iii FOREWORD This report documents the outcome of an evaluation of the Software Quality Assurance (SQA) attributes of the CFAST computer code for accident analysis applications, relative to established requirements. This evaluation, a "gap analysis," is performed to meet commitment 4.2.1.3 of the Department of Energy's

351

Technical Standards, MELCOR - Gap Analysis - May 3, 2004 | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MELCOR - Gap Analysis - May 3, 2004 MELCOR - Gap Analysis - May 3, 2004 Technical Standards, MELCOR - Gap Analysis - May 3, 2004 May 3, 2004 Software Quality Assurance Improvement Plan: MELCOR Gap Analysis This report documents the outcome of an evaluation of the Software Quality Assurance (SQA) attributes of the MELCOR computer code for leak path factor applications, relative to established software requirements. This evaluation, a "gap analysis," is performed to meet Commitment 4.2.1.3 of the Department of Energy's Implementation Plan to resolve SQA issues identified in the Defense Nuclear Facilities Safety Board Recommendation 2002-1. Technical Standards, MELCOR - Gap Analysis More Documents & Publications Technical Standards, Guidance on MELCOR computer code - May 3, 2004

352

A CMOS Hearing Aid Device  

Science Conference Proceedings (OSTI)

In this paper a CMOS Hearing Aid Device is described. The system is composed of a low-distortion low-noise preamplifier, an automatic gain control (AGC), a fully programmable switched-capacitor filter (equalizer), and a control system. The device has ... Keywords: AGCs, CMOS amplifiers and filters, analog integrated circuits, hearing aid device

José Silva-Martínez; Sergio Solís-Bustos; Jorge Salcedo-Suñer; Rogelio Rojas-Hernández; Martin Schellenberg

1999-11-01T23:59:59.000Z

353

Hybrid free electron laser devices  

Science Conference Proceedings (OSTI)

We consider hybrid free electron laser devices consisting of Cerenkov and undulator sections. We will show that they can in principle be used as segmented devices and also show the possibility of exploiting Cerenkov devices for the generation of nonlinear harmonic coherent power. We discuss both oscillator and amplifier schemes.

Asgekar, Vivek; Dattoli, G. [Department of Physics, University of Pune, Pune 411007 (India); ENEA, Unita Tecnico Scientifica Technologie Fisiche, Avanzate, Centro Ricerche Frascati, C.P. 65-00044 Frascati, Rome (Italy)

2007-03-15T23:59:59.000Z

354

Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices  

SciTech Connect

Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials that convert heat into electricity or actively remove heat for refrigeration and cooling purposes. Thermoelectric devices resemble computer chips, and they manage heat by manipulating the direction of electrons at the nanoscale. These devices aren’t new, but they are currently too inefficient and expensive for widespread use. Phononic Devices is using a high-performance, cost-effective thermoelectric design that will improve the device’s efficiency and enable electronics manufacturers to more easily integrate them into their products.

None

2009-12-11T23:59:59.000Z

355

Coordinating overcurrent protection devices  

Science Conference Proceedings (OSTI)

Distribution, substation, and plant engineers can benefit from using an overcurrent protection program in commercial, industrial, and utility applications to aid in clearing temporary faults and isolating permanent faults. In the time it normally takes to check one coordination scheme manually, dozens of alternatives can be evaluated using a graphics-oriented program, because the engineer receives immediate feedback for quick decision-making. It is well known that accurately coordinating overcurrent protection devices can minimize or prevent equipment damage, and electrical power service to customers can be greatly improved. In addition to assisting experienced engineers, an overcurrent protection program is an excellent training tool for new engineers.

St. John, M.; Borgnino, A.

1996-07-01T23:59:59.000Z

356

Fiber optic monitoring device  

DOE Patents (OSTI)

A device for the purpose of monitoring light transmissions in optical fibers comprises a fiber optic tap that optically diverts a fraction of a transmitted optical signal without disrupting the integrity of the signal. The diverted signal is carried, preferably by the fiber optic tap, to a lens or lens system that disperses the light over a solid angle that facilitates viewing. The dispersed light indicates whether or not the monitored optical fiber or system of optical fibers is currently transmitting optical information. 4 figures.

Samborsky, J.K.

1993-10-05T23:59:59.000Z

357

Nanoscale Josephson Devices  

E-Print Network (OSTI)

, ferromagnetically (aligned ferromagnetic layers) FIB Focused Ion Beam GL Ginzburg-Landau GPIB General Purpose Interface Bus GMR Giant Magnetoresistance HTS High Temperature Superconductor I Insulator LED Light Emitting Diode LTS Low Temperature Superconductor MR... . The fabrication of intrinsic Josephson junctions in the high temperature superconductor Tl2Ba2CaCu2O8 will then be discussed, as well as Nb/MoSi2/Nb junctions, superconducting quantum interference devices, and finally GaN light emitting diodes. The work on Tl2Ba2...

Bell, Chris

358

Fiber optic monitoring device  

DOE Patents (OSTI)

This invention is comprised of a device for the purpose of monitoring light transmissions in optical fibers comprises a fiber optic tap that optically diverts a fraction of a transmitted optical signal without disrupting the integrity of the signal. The diverted signal is carried, preferably by the fiber optic tap, to a lens or lens system that disperses the light over a solid angle that facilitates viewing. The dispersed light indicates whether or not the monitored optical fiber or system of optical fibers is currently transmitting optical information.

Samborsky, J.K.

1992-12-31T23:59:59.000Z

359

Micro environmental sensing device  

DOE Patents (OSTI)

A microelectromechanical (MEM) acceleration switch is disclosed which includes a proof mass flexibly connected to a substrate, with the proof mass being moveable in a direction substantially perpendicular to the substrate in response to a sensed acceleration. An electrode on the proof mass contacts one or more electrodes located below the proof mass to provide a switch closure in response to the sensed acceleration. Electrical latching of the switch in the closed position is possible with an optional latching electrode. The MEM acceleration switch, which has applications for use as an environmental sensing device, can be fabricated using micromachining.

Polosky, Marc A. (Tijeras, NM); Lukens, Laurance L. (Tijeras, NM)

2006-05-02T23:59:59.000Z

360

Vacuum gaps with small tunnel currents at large electric field...  

NLE Websites -- All DOE Office Websites (Extended Search)

gap can help to reduce tunnel currents. We discuss applications of this technology for energy storage, charge storage, and power supplies. Speaker Bio: Professor Alfred Hubler...

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

On Penalty and Gap Function Methods for Bilevel Equilibrium ...  

E-Print Network (OSTI)

ized gap function has been introduced by Fukushima and Taji in [23] for variational inequalities, and extended by Mastroeni in [16] to equilibrium problems.

362

Big Stone Gap, Virginia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Congressional Districts by Places. Retrieved from "http:en.openei.orgwindex.php?titleBigStoneGap,Virginia&oldid227780" Categories: Places Stubs Cities What links here...

363

Buffalo Gap, South Dakota: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Edit with form History Share this page on Facebook icon Twitter icon Buffalo Gap, South Dakota: Energy Resources Jump to: navigation, search Equivalent URI DBpedia...

364

Surface functionalization of graphene devices  

E-Print Network (OSTI)

Graphene, a zero-gap semiconductor with massless charge carriers, is emerging as an amazing material for future electronics, due to its outstanding electrical and mechanical performances. However, the lack of a bandgap ...

Zhang, Xu, S.M. Massachusetts Institute of Technology

2012-01-01T23:59:59.000Z

365

Radiography Device | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Radiography Device Radiography Device Radiography Device This scenario provides the planning instructions, guidance, and evaluation forms necessary to conduct an exercise involving a highway shipment of a radiography device (Class 7 - Radioactive). This exercise manual is one in a series of five scenarios developed by the Department of Energy Transportation Emergency Preparedness Program. Responding agencies may include several or more of the following: local municipal and county fire, police, sheriff, and Emergency Medical Services (EMS) personnel; state, local, and federal emergency response teams; emergency response contractors; and other emergency response resources that could potentially be provided by the carrier and the originating facility (shipper). Radiography Device.docx

366

Fluid flow monitoring device  

DOE Patents (OSTI)

This invention consists of a flow meter and temperature measuring device comprising a tube with a body centered therein for restricting flow and a sleeve at the upper end of the tube to carry several channels formed longitudinally in the sleeve to the appropriate axial location where they penetrate the tube to allow pressure measurements and temperature measurements with thermocouples. The high pressure measurement is made using a channel penetrating the tube away from the body and the low pressure measurement is made at a location at the widest part of the body. An end plug seals the end of the device and holes at its upper end allow fluid to pass from the interior of the tube into a plenum. The channels are made by cutting grooves in the sleeve, the grooves widened at the surface of the sleeve and then a strip of sleeve material is welded to the grooves closing the channels. Preferably the sleeve is packed with powdered graphite before cutting the grooves and welding the strips.

McKay, M.D.; Sweeney, C.E.

1991-03-05T23:59:59.000Z

367

W-band Frequency Synthesis and AM/PM Noise ...  

Science Conference Proceedings (OSTI)

... W-band Frequency Synthesis and AM/PM Noise Measurement System. ... Dual-channel W-band AM/PM noise measurement system. ...

2010-10-05T23:59:59.000Z

368

IR Spectral Bands and Performance | Open Energy Information  

Open Energy Info (EERE)

2013 DOI Not Provided Check for DOI availability: http:crossref.org Online Internet link for IR Spectral Bands and Performance Citation Chris Douglass. IR Spectral Bands...

369

The association of Texas small school bands: An historical perspective.  

E-Print Network (OSTI)

??From 1991 – 2011 the Association of Texas Small School Bands has provided a multitude of services for small school band directors and students in… (more)

Exline, Jimmie

2012-01-01T23:59:59.000Z

370

Automated coregistration of MTI spectral bands.  

SciTech Connect

In the focal plane of a pushbroom imager, a linear array of pixels is scanned across the scene, building up the image one row at a time. For the Multispectral Thermal Imager (MTI), each of fifteen different spectral bands has its own linear array. These arrays are pushed across the scene together, but since each band's array is at a different position on the focal plane, a separate image is produced for each band. The standard MTI data products resample these separate images to a common grid and produce coregistered multispectral image cubes. The coregistration software employs a direct 'dead reckoning' approach. Every pixel in the calibrated image is mapped to an absolute position on the surface of the earth, and these are resampled to produce an undistorted coregistered image of the scene. To do this requires extensive information regarding the satellite position and pointing as a function of time, the precise configuration of the focal plane, and the distortion due to the optics. These must be combined with knowledge about the position and altitude of the target on the rotating ellipsoidal earth. We will discuss the direct approach to MTI coregistration, as well as more recent attempts to 'tweak' the precision of the band-to-band registration using correlations in the imagery itself.

Theiler, J. P. (James P.); Galbraith, A. E. (Amy E.); Pope, P. A. (Paul A.); Ramsey, K. A. (Keri A.); Szymanski, J. J. (John J.)

2002-01-01T23:59:59.000Z

371

Energy band alignment of InGaZnO{sub 4}/Si heterojunction determined by x-ray photoelectron spectroscopy  

SciTech Connect

X-ray photoelectron spectroscopy was utilized to determine the valence band offset ({Delta}E{sub V}) of the InGaZnO{sub 4} (IGZO)/Si heterojunction. The IGZO films were grown on Si (100) using radio frequency magnetron sputtering. A value of {Delta}E{sub V} = 2.53 eV was obtained by using In 3d{sub 5/2}, Ga 2p{sub 3/2} core energy levels as references. Taking into consideration the experimental band gap of 3.20 eV of the IGZO, this would result in a conduction band offset {Delta}E{sub C} = 0.45 eV in this heterostructure.

Xie Zhangyi; Lu Hongliang; Xu Saisheng; Geng Yang; Sun Qingqing; Ding Shijin; Zhang, David Wei [State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433 (China)

2012-12-17T23:59:59.000Z

372

CMOS Reliability and Advanced Devices Group  

Science Conference Proceedings (OSTI)

... electron devices for the electronics industry by ... reliability issues in emerging electronic devices. ... Power Device and Thermal Metrology—The Power ...

2013-04-26T23:59:59.000Z

373

Device for frequency modulation of a laser output spectrum  

DOE Patents (OSTI)

A device is provided for fast frequency modulating the output spectrum of multimode lasers and single frequency lasers that are not actively stabilized. A piezoelectric transducer attached to a laser cavity mirror is driven in an unconventional manner to excite resonance vibration of the tranducer to rapidly, cyclicly change the laser cavity length. The result is a cyclic sweeping of the output wavelength sufficient to fill the gaps in the laser output frequency spectrum. When a laser is used to excite atoms or molecules, complete absorption line coverage is made possible.

Beene, J.R.; Bemis, C.E. Jr.

1984-07-17T23:59:59.000Z

374

Device for frequency modulation of a laser output spectrum  

DOE Patents (OSTI)

A device is provided for fast frequency modulating the output spectrum of multimode lasers and single frequency lasers that are not actively stabilized. A piezoelectric transducer attached to a laser cavity mirror is driven in an unconventional manner to excite resonance vibration of the transducer to rapidly, cyclicly change the laser cavity length. The result is a cyclic sweeping of the output wavelength sufficient to fill the gaps in the laser output frequency spectrum. When such a laser is used to excite atoms or molecules, complete absorption line coverage is made possible.

Beene, James R. (Oak Ridge, TN); Bemis, Jr., Curtis E. (Oak Ridge, TN)

1986-01-01T23:59:59.000Z

375

On-chip, photon-number-resolving, telecommunication-band detectors for scalable photonic information processing  

SciTech Connect

Integration is currently the only feasible route toward scalable photonic quantum processing devices that are sufficiently complex to be genuinely useful in computing, metrology, and simulation. Embedded on-chip detection will be critical to such devices. We demonstrate an integrated photon-number-resolving detector, operating in the telecom band at 1550 nm, employing an evanescently coupled design that allows it to be placed at arbitrary locations within a planar circuit. Up to five photons are resolved in the guided optical mode via absorption from the evanescent field into a tungsten transition-edge sensor. The detection efficiency is 7.2{+-}0.5 %. The polarization sensitivity of the detector is also demonstrated. Detailed modeling of device designs shows a clear and feasible route to reaching high detection efficiencies.

Gerrits, Thomas; Lita, Adriana E.; Calkins, Brice; Tomlin, Nathan A.; Fox, Anna E.; Linares, Antia Lamas; Mirin, Richard P.; Nam, Sae Woo [National Institute of Standards and Technology, Boulder, Colorado, 80305 (United States); Thomas-Peter, Nicholas; Metcalf, Benjamin J.; Spring, Justin B.; Langford, Nathan K.; Walmsley, Ian A. [Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom); Gates, James C.; Smith, Peter G. R. [Optoelectronics Research Centre, University of Southampton, Highfield SO17 1BJ (United Kingdom)

2011-12-15T23:59:59.000Z

376

Radiative Heating in Underexplored Bands Campaign (RHUBC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Bands Campaign (RHUBC) D. Turner and E. Mlawer RHUBC Breakout Session 2008 ARM Science Team Meeting 13 March, 2008 Norfolk, Virginia Motivation * Radiative heating/cooling in the mid-troposphere modulate the vertical motions of the atmosphere - This heating/cooling occurs primarily in water vapor absorption bands that are opaque at the surface * Approximately 40% of the OLR comes from the far-IR * Until recently, the observational tools were not available to evaluate the accuracy of the far-IR radiative transfer models - Spectrally resolved far-IR radiances, accurate PWV * Need to validate both clear sky (WV) absorption and cirrus scattering properties in these normally opaque bands Scientific Objectives * Conduct clear sky radiative closure studies in order to reduce uncertainties

377

Electrical safety device  

DOE Patents (OSTI)

An electrical safety device for use in power tools that is designed to automatically discontinue operation of the power tool upon physical contact of the tool with a concealed conductive material. A step down transformer is used to supply the operating power for a disconnect relay and a reset relay. When physical contact is made between the power tool and the conductive material, an electrical circuit through the disconnect relay is completed and the operation of the power tool is automatically interrupted. Once the contact between the tool and conductive material is broken, the power tool can be quickly and easily reactivated by a reset push button activating the reset relay. A remote reset is provided for convenience and efficiency of operation.

White, David B. (Greenock, PA)

1991-01-01T23:59:59.000Z

378

TWO-SPEED DEVICE  

DOE Patents (OSTI)

A two-speed device is described comprising a two-part stop engageable with a follower. The two-pant stop comprises first and second members in threaded engagement with each other. The first member is restrained against rotation but is free to move longitudinally, and the second member is free to move arially and rotatively. Means are provided to impart rotation to the second member. The follower is engageable first with an end of one member and then with the corresponding end of the other member after some relative longitudinal movement of the members with respect to one another due to the rotation of the second member and the holding of the first member against rotation.

Brunson, G.S. Jr.

1961-04-01T23:59:59.000Z

379

False color viewing device  

DOE Patents (OSTI)

This invention consists of a viewing device for observing objects in near-infrared false-color comprising a pair of goggles with one or more filters in the apertures, and pads that engage the face for blocking stray light from the sides so that all light reaching, the user`s eyes come through the filters. The filters attenuate most visible light and pass near-infrared (having wavelengths longer than approximately 700 nm) and a small amount of blue-green and blue-violet (having wavelengths in the 500 to 520 nm and shorter than 435 nm, respectively). The goggles are useful for looking at vegetation to identify different species and for determining the health of the vegetation, and to detect some forms of camouflage.

Kronberg, J.W.

1991-05-08T23:59:59.000Z

380

Programmable logic devices  

Science Conference Proceedings (OSTI)

Erasable programmable logic devices (EPLDs) were investigated to determine their advantages and/or disadvantages in Test Equipment Engineering applications. It was found that EPLDs performed as well as or better than identical circuits using standard TTL logic. The chip count in these circuits was reduced, saving printed circuit board space and shortening fabrication and prove-in time. Troubleshooting circuits of EPLDs was also easier with 10 to 100 times fewer wires needed. The reduced number of integrated circuits (ICs) contributed to faster system speeds and an overall lower power consumption. In some cases changes to the circuit became software changes using EPLDs instead of hardware changes for standard logic. Using EPLDs was fairly easy; however, as with any new technology, a learning curve must be overcome before EPLDs can be used efficiently. The many benefits of EPLDs outweighed this initial inconvenience.

Jacobs, J.L.

1993-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

False color viewing device  

DOE Patents (OSTI)

A viewing device for observing objects in near-infrared false-color comprising a pair of goggles with one or more filters in the apertures, and pads that engage the face for blocking stray light from the sides so that all light reaching the user's eyes come through the filters. The filters attenuate most visible light and pass near-infrared (having wavelengths longer than approximately 700 nm) and a small amount of blue-green and blue-violet (having wavelengths in the 500 to 520 nm and shorter than 435 nm, respectively). The goggles are useful for looking at vegetation to identify different species and for determining the health of the vegetation, and to detect some forms of camouflage.

Kronberg, James W. (108 Independent Blvd., Aiken, SC 29801)

1992-01-01T23:59:59.000Z

382

Electrical safety device  

DOE Patents (OSTI)

This invention consists of an electrical safety device for use in power tools that is designed to automatically discontinue operation of the power tool upon physical contact of the tool with a concealed conductive material. A step down transformer is used to supply the operating power for a disconnect relay and reset delay. When physical contact is made between the power tool and the conductive material, an electrical circuit through the disconnect relay is completed and the operation of the power tool is automatically interrupted. Once the contact between the tool and conductive material is broken, the power tool can be quickly and easily reactivated by a reset push button activating the reset relay. A remote reset is provided for convenience and efficiency of operation.

White, D.B.

1990-09-06T23:59:59.000Z

383

Nuclear reactor safety device  

DOE Patents (OSTI)

A safety device is described for use in a nuclear reactor for axially repositioning a control rod with respect to the reactor core in the event of a thermal excursion. It comprises a laminated strip helically configured to form a tube, said tube being in operative relation to said control rod. The laminated strip is formed of at least two materials having different thermal coefficients of expansion, and is helically configured such that the material forming the outer lamina of the tube has a greater thermal coefficient of expansion than the material forming the inner lamina of said tube. In the event of a thermal excursion the laminated strip will tend to curl inwardly so that said tube will increase in length, whereby as said tube increases in length it exerts a force on said control rod to axially reposition said control rod with respect to said core.

Hutter, E.

1983-08-15T23:59:59.000Z

384

Tool setting device  

DOE Patents (OSTI)

The present invention relates to a tool setting device for use with numerically controlled machine tools, such as lathes and milling machines. A reference position of the machine tool relative to the workpiece along both the X and Y axes is utilized by the control circuit for driving the tool through its program. This reference position is determined for both axes by displacing a single linear variable displacement transducer (LVDT) with the machine tool through a T-shaped pivotal bar. The use of the T-shaped bar allows the cutting tool to be moved sequentially in the X or Y direction for indicating the actual position of the machine tool relative to the predetermined desired position in the numerical control circuit by using a single LVDT.

Brown, Raymond J. (Clinton, TN)

1977-01-01T23:59:59.000Z

385

Capacitance measuring device  

DOE Patents (OSTI)

A capacitance measuring circuit is provided in which an unknown capacitance is measured by comparing the charge stored in the unknown capacitor with that stored in a known capacitance. Equal and opposite voltages are repetitively simultaneously switched onto the capacitors through an electronic switch driven by a pulse generator to charge the capacitors during the ''on'' portion of the cycle. The stored charge is compared by summing discharge currents flowing through matched resistors at the input of a current sensor during the ''off'' portion of the switching cycle. The net current measured is thus proportional to the difference in value of the two capacitances. The circuit is capable of providing much needed accuracy and stability to a great variety of capacitance-based measurement devices at a relatively low cost.

Andrews, W.H. Jr.

1984-08-01T23:59:59.000Z

386

Ceramics for fusion devices  

SciTech Connect

Ceramics are required for a number of applications in fusion devices, among the most critical of which are magnetic coil insulators, windows for RF heating systems, and structural uses. Radiation effects dominate consideration of candidate materials, although good pre-irradiation properties are a requisite. Materials and components can be optimized by careful control of chemical and microstructural content, and application of brittle material design and testing techniques. Future directions for research and development should include further extension of the data base in the areas of electrical, structural, and thermal properties; establishment of a fission neutron/fusion neutron correlation including transmutation gas effects; and development of new materials tailored to meet the specific needs of fusion reactors.

Clinard, F.W. Jr.

1984-01-01T23:59:59.000Z

387

False color viewing device  

DOE Patents (OSTI)

A viewing device for observing objects in near-infrared false-color comprising a pair of goggles with one or more filters in the apertures, and pads that engage the face for blocking stray light from the sides so that all light reaching the user's eyes come through the filters. The filters attenuate most visible light and pass near-infrared (having wavelengths longer than approximately 700 nm) and a small amount of blue-green and blue-violet (having wavelengths in the 500 to 520 nm and shorter than 435 nm, respectively). The goggles are useful for looking at vegetation to identify different species and for determining the health of the vegetation, and to detect some forms of camouflage. 7 figs.

Kronberg, J.W.

1992-10-20T23:59:59.000Z

388

Multichannel optical sensing device  

DOE Patents (OSTI)

A multichannel optical sensing device is disclosed, for measuring the outr sky luminance or illuminance or the luminance or illuminance distribution in a room, comprising a plurality of light receptors, an optical shutter matrix including a plurality of liquid crystal optical shutter elements operable by electrical control signals between light transmitting and light stopping conditions, fiber optic elements connected between the receptors and the shutter elements, a microprocessor based programmable control unit for selectively supplying control signals to the optical shutter elements in a programmable sequence, a photodetector including an optical integrating spherical chamber having an input port for receiving the light from the shutter matrix and at least one detector element in the spherical chamber for producing output signals corresponding to the light, and output units for utilizing the output signals including a storage unit having a control connection to the microprocessor based programmable control unit for storing the output signals under the sequence control of the programmable control unit.

Selkowitz, Stephen E. (Piedmont, CA)

1990-01-01T23:59:59.000Z

389

Personal annunciation device  

DOE Patents (OSTI)

A personal annunciation device (PAD) providing, in an area of interest, compensatory annunciation of the presence of an abnormal condition in a hazardous area and accountability of the user of the PAD. Compensatory annunciation supplements primary annunciation provided by an emergency notification system (ENS). A detection system detects an abnormal condition, and a wireless transmission system transmits a wireless transmission to the PAD. The PAD has a housing enclosing the components of the PAD including a communication module for receiving the wireless transmission, a power supply, processor, memory, annunciation system, and RFID module. The RFID module has an RFID receiver that listens for an RFID transmission from an RFID reader disposed in a portal of an area of interest. The PAD identifies the transmission and changes its operating state based on the transmission. The RFID readers recognize, record, and transmit the state of the PAD to a base station providing accountability of the wearer.

Angelo, Peter (Oak Ridge, TN); Younkin, James (Oak Ridge, TN); DeMint, Paul (Kingston, TN)

2011-01-25T23:59:59.000Z

390

Gap Winds in a Fjord. Part II: Hydraulic Analog  

Science Conference Proceedings (OSTI)

A simple shallow-water model of gap wind in a channel that is based upon hydraulic theory is presented and compared with observations and output from a 3D mesoscale numerical model. The model is found to be successful in simulating gap winds. The ...

Peter L. Jackson; D. G. Steyn

1994-12-01T23:59:59.000Z

391

Hysteresis of a Western Boundary Current Leaping across a Gap  

Science Conference Proceedings (OSTI)

An idealized problem of a western boundary current of Munk thickness LM flowing across a gap in a ridge is considered using a single-layer depth-averaged approach. When the gap (of width 2a) is narrow, a 3.12LM, viscous forces alone restrict ...

Vitalii A. Sheremet

2001-05-01T23:59:59.000Z

392

Quantum Cascade Laser Energy Band Diagram  

E-Print Network (OSTI)

Quantum Cascade Lasers (QCLs) are semiconductor lasers that emit in the mid- and long-wave IR bands, and are fi nding new applications in precision sensing, spectroscopy, medical, and military applications (1). Their wide tuning range and fast response time allow for faster and more precise compact trace element detectors and gas analyzers that are replacing slower and larger FTIR, mass spectroscopy, and photothermal microspectroscopy systems. Figure 1 represents the physics behind Quantum Cascade Lasers. It depicts the laser energy bands that allow QC lasing. For more information about QCLs and the physics behind

unknown authors

2013-01-01T23:59:59.000Z

393

Valence Band Structure of Highly Efficient p-type Thermoelectric PbTe-PbS Alloys  

Science Conference Proceedings (OSTI)

New experimental evidence is given relevant to the temperature-dependence of valence band structure of PbTe and PbTe1-xSx alloys (0.04 x 0.12), and its effect on the thermoelectric figure of merit zT. The x = 0.08 sample has zT ~ 1.55 at 773K. The magnetic field dependence of the high-temperature Hall resistivity of heavily p-type (> 1019 cm-3) Na-doped PbTe1-xSx reveals the presence of high-mobility electrons. This put in question prior analyses of the Hall coefficient and the conclusion that PbTe would be an indirect gap semiconductor at temperatures where its zT is optimal. Possible origins for these electrons are discussed: they can be induced by photoconductivity, or by the topology of the Fermi surface when the L and -bands merge. Negative values for the low-temperature thermopower are also observed. Our data show that PbTe continues to be a direct gap semiconductor at temperatures where the zT and S2 of p-type PbTe are optimal e.g. 700-900K. The previously suggested temperature induced rapid rise in energy of the heavy hole LVB relative to the light hole UVB is not supported by the experimental data.

Jaworski, C. M. [Ohio State University; Nielsen, Mechele [Ohio State University; Wang, Hsin [ORNL; Girard, Steven N. [Northwestern University, Evanston; Cai, Wei [ORNL; Porter, Wallace D [ORNL; Kanatzidis, Mercouri G. [Northwestern University, Evanston; Heremans, J. P. [Ohio State University

2013-01-01T23:59:59.000Z

394

Band-Structure, Optical Properties, and Defect Physics of the Photovoltaic Semiconductor SnS  

Science Conference Proceedings (OSTI)

SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has a 1.07 eV indirect band gap with an effective absorption onset located 0.4 eV higher. The effective mass of minority carrier ranges from 0.5 m{sub 0} perpendicular to the van der Waals layers to 0.2 m{sub 0} into the van der Waals layers. The positive characteristics of SnS feature a desirable p-type carrier concentration due to the easy formation of acceptor-like intrinsic Sn vacancy defects. Potentially detrimental deep levels due to SnS antisite or S vacancy defects can be suppressed by suitable adjustment of the growth condition towards S-rich.

Vidal, J.; Lany, S.; d'Avezac, M.; Zunger, A.; Zakutayev, A.; Francis, J.; Tate, J.

2012-01-16T23:59:59.000Z

395

Review of Used Nuclear Fuel Storage and Transportation Technical Gap  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Analysis Analysis Review of Used Nuclear Fuel Storage and Transportation Technical Gap Analysis While both wet and dry storage have been shown to be safe options for storing used nuclear fuel (UNF), the focus of the program is on dry storage of commercial UNF at reactor or centralized locations. This report focuses on the knowledge gaps concerning extended storage identified in numerous domestic and international investigations and provides the Used Fuel Disposition Campaign"s (UFDC) gap description, any alternate gap descriptions, the rankings by the various organizations, evaluation of the priority assignment, and UFDC-recommended action based on the comparison. Review of Used Nuclear Fuel Storage and Transportation Technical Gap Analysis More Documents & Publications

396

Surface photovoltage measurements and finite element modeling of SAW devices.  

Science Conference Proceedings (OSTI)

Over the course of a Summer 2011 internship with the MEMS department of Sandia National Laboratories, work was completed on two major projects. The first and main project of the summer involved taking surface photovoltage measurements for silicon samples, and using these measurements to determine surface recombination velocities and minority carrier diffusion lengths of the materials. The SPV method was used to fill gaps in the knowledge of material parameters that had not been determined successfully by other characterization methods. The second project involved creating a 2D finite element model of a surface acoustic wave device. A basic form of the model with the expected impedance response curve was completed, and the model is ready to be further developed for analysis of MEMS photonic resonator devices.

Donnelly, Christine

2012-03-01T23:59:59.000Z

397

Alta Devices | Open Energy Information  

Open Energy Info (EERE)

Devices Devices Jump to: navigation, search Name Alta Devices Place Santa Clara, California Zip 95054 Product California-based stealth mode company developing low-cost compound-PV-semiconductors. Website https://www.altadevices.com/ References Alta Devices[1] Information About Partnership with NREL Partnership with NREL Yes Partnership Type Incubator Partnering Center within NREL National Center for Photovoltaics Partnership Year 2010 Link to project description http://www.nrel.gov/news/press/2010/802.html LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Alta Devices is a company located in Santa Clara, California . References ↑ "Alta Devices" Retrieved from

398

Resonant Tunneling Device Logic Circuits  

E-Print Network (OSTI)

This report is a summary of the activities in the field of resonant tunneling device circuit design. The presented work has been performed by the Department of Microelectronics of the University of Dortmund (UNIDO) and the Solid-State Electronics Department of the Gerhard-Mercator University of Duisburg (GMUD) during the first year of the Microelectronics Advanced Research Initiative projects ANSWERS (Autonomous Nanoelectronic Systems with Extended Replication and Signalling) and LOCOM (Logic Circuits with Reduced Complexity based on Devices with Higher Functionality). As part of the ANSWERS work-package the principal task of UNIDO is to investigate novel logic circuit architectures for resonant tunneling devices, to perform circuit simulations, and to specify the electrical device parameters. The basic device configuration is a monolithically integrated resonant tunneling diode heterostructure field-effect transistor (RTD-HFET). This device and the demonstrator circuits are fabricated by the LOCOM partner GMUD.

Christian Pacha; Peter Glösekötter; Karl Goser; Werner Prost; Uwe Auer; Franz-J. Tegude

1999-01-01T23:59:59.000Z

399

Band structure of doubly-odd nuclei around mass 130  

Science Conference Proceedings (OSTI)

Nuclear structure of the doublet bands in the doubly-odd nuclei with mass A{approx}130 is studied in terms of a pair-truncated shell model. The model reproduces quite well the energy levels of the doublet bands and the electromagnetic transitions. The analysis of the electromagnetic transitions reveals new band structure of the doublet bands.

Higashiyama, Koji [Department of Physics, Chiba Institute of Technology, Narashino, Chiba 275-0023 (Japan); Yoshinaga, Naotaka [Department of Physics, Saitama University, Saitama City 338-8570 (Japan)

2011-05-06T23:59:59.000Z

400

Safe-haven locking device  

DOE Patents (OSTI)

Disclosed is a locking device for eliminating external control of a secured space formed by fixed and movable barriers. The locking device uses externally and internally controlled locksets and a movable strike, operable from the secured side of the movable barrier, to selectively engage either lockset. A disengagement device, for preventing forces from being applied to the lock bolts is also disclosed. In this manner, a secured space can be controlled from the secured side as a safe-haven. 4 figures.

Williams, J.V.

1984-04-26T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Measuring Devices: Compressed Natural Gas Retail Motor ...  

Science Conference Proceedings (OSTI)

Compressed Natural Gas Retail Motor-Fuel Dispensers. ... Hydrogen Measuring Devices; Liquefied Petroleum Gas Liquid-Measuring Devices; ...

2010-10-05T23:59:59.000Z

402

Shear banding in soft glassy materials  

E-Print Network (OSTI)

Many soft materials, including foams, dense emulsions, micro gel bead suspensions, star polymers, dense packing of surfactant onion micelles, and textured morphologies of liquid crystals, share the basic "glassy" features of structural disorder and metastability. These in turn give rise to several notable features in the low frequency shear rheology (deformation and flow properties) of these materials: in particular, the existence of a yield stress below which the material behaves like a solid, and above which it flows like a liquid. In the last decade, intense experimental activity has also revealed that these materials often display a phenomenon known as shear banding, in which the flow profile across the shear cell exhibits macroscopic bands of different viscosity. Two distinct classes of yield stress fluid have been identified: those in which the shear bands apparently persist permanently (for as long as the flow remains applied), and those in which banding arises only transiently during a process in which a steady flowing state is established out of an initial rest state (for example, in a shear startup or step stress experiment). After surveying the motivating experimental data, we describe recent progress in addressing it theoretically, using the soft glassy rheology model and a simple fluidity model. We also briefly place these theoretical approaches in the context of others in the literature, including elasto-plastic models, shear transformation zone theories, and molecular dynamics simulations. We discuss finally some challenges that remain open to theory and experiment alike.

Suzanne M. Fielding

2013-09-13T23:59:59.000Z

403

Microbiopsy/precision cutting devices  

DOE Patents (OSTI)

Devices are disclosed for performing tissue biopsy on a small scale (microbiopsy). By reducing the size of the biopsy tool and removing only a small amount of tissue or other material in a minimally invasive manner, the risks, costs, injury and patient discomfort associated with traditional biopsy procedures can be reduced. By using micromachining and precision machining capabilities, it is possible to fabricate small biopsy/cutting devices from silicon. These devices can be used in one of four ways (1) intravascularly, (2) extravascularly, (3) by vessel puncture, and (4) externally. Additionally, the devices may be used in precision surgical cutting. 6 figs.

Krulevitch, P.A.; Lee, A.P.; Northrup, M.A.; Benett, W.J.

1999-07-27T23:59:59.000Z

404

Integrated Technology for Distribution Systems Applications: Survey and Testing of Voltage Detecting/Indicating Devices for AC Power Lines  

Science Conference Proceedings (OSTI)

This report summarizes product reviews and testing commercially available voltage-sensing devices used to detect energized electric distribution lines, with particular focus on minimum detection and indication performance. To adequately detect line energization across the entire spectrum of possible voltage levels on a power line (from 40 Vac to full line voltage), multiple devices are currently necessary. The ideal improvement to address current gaps in voltage sensing would be the development of a ...

2013-12-17T23:59:59.000Z

405

Bridging the Gaps of High-Tc Superconductor  

NLE Websites -- All DOE Office Websites (Extended Search)

Bridging the Gaps of High-Tc Bridging the Gaps of High-Tc Superconductor Since the discovery of high-temperature superconductor by Bednorz and Müller in 1986, this field has become one of the most important research topics in solid state physics. In the past 20 years many unconventional properties have been discovered in this new class of materials. These have challenged our conventional wisdom and driven the development of many novel theories. Among these discoveries, the most mysterious is probably the pseudogap phenomena: it has been observed that there is an energy gap above the superconducting transition temperature (TC) that persists over a wide range of temperatures and chemical compositions [1]. This peculiar behavior appears to be very different from a conventional superconductor. Here the electrons form so-called "Cooper pairs", which manifests itself as an energy gap in many spectroscopic measurements. This energy gap, known as superconducting gap, appears only below TC where the electrical resistance also vanishes (hence the name 'superconductor'). This important difference has stimulated lots of debate in the search of understanding high-TC superconductivity on questions such as: "What is the pseudogap?" and "What is its relation to superconducting gap and superconductivity at high temperature?"

406

Temperature differential detection device  

DOE Patents (OSTI)

A temperature differential detection device for detecting the temperature differential between predetermined portions of a container wall is disclosed as comprising a Wheatstone bridge circuit for detecting resistance imbalance with a first circuit branch having a first elongated wire element mounted in thermal contact with a predetermined portion of the container wall, a second circuit branch having a second elongated wire element mounted in thermal contact with a second predetermined portion of a container wall with the wire elements having a predetermined temperature-resistant coefficient, an indicator interconnected between the first and second branches remote from the container wall for detecting and indicating resistance imbalance between the first and second wire elements, and connector leads for electrically connecting the wire elements to the remote indicator in order to maintain the respective resistance value relationship between the first and second wire elements. The indicator is calibrated to indicate the detected resistance imbalance in terms of a temperature differential between the first and second wall portions.

Girling, Peter M. (Allentown, PA)

1986-01-01T23:59:59.000Z

407

Temperature differential detection device  

DOE Patents (OSTI)

A temperature differential detection device for detecting the temperature differential between predetermined portions of a container wall is disclosed as comprising a Wheatstone bridge circuit for detecting resistance imbalance with a first circuit branch having a first elongated wire element mounted in thermal contact with a predetermined portion of the container wall, a second circuit branch having a second elongated wire element mounted in thermal contact with a second predetermined portion of a container wall with the wire elements having a predetermined temperature-resistant coefficient, an indicator interconnected between the first and second branches remote from the container wall for detecting and indicating resistance imbalance between the first and second wire elements, and connector leads for electrically connecting the wire elements to the remote indicator in order to maintain the respective resistance value relationship between the first and second wire elements. The indicator is calibrated to indicate the detected resistance imbalance in terms of a temperature differential between the first and second wall portions. 2 figs.

Girling, P.M.

1986-04-22T23:59:59.000Z

408

Software Quality Assurance Improvment Plan: ALOHA Gap Analysis, Final Report  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Final-ALOHA Final-ALOHA Defense Nuclear Facilities Safety Board Recommendation 2002-1 Software Quality Assurance Improvement Plan Commitment 4.2.1.3: Software Quality Assurance Improvement Plan: ALOHA Gap Analysis Final Report U.S. Department of Energy Office of Environment, Safety and Health 1000 Independence Ave., S.W. Washington, DC 20585-2040 May 2004 ALOHA Gap Analysis May 2004 Final Report INTENTIONALLY BLANK ii ALOHA Gap Analysis May 2004 Final Report FOREWORD This report documents the outcome of an evaluation of the Software Quality Assurance (SQA) attributes of the chemical source term and atmospheric dispersion computer code, ALOHA 5.2.3, relative to established

409

NETL: Pressure Swing Absorption Device  

NLE Websites -- All DOE Office Websites (Extended Search)

Pressure Swing Absorption Device and Process for Separating CO2 from Shifted Syngas and its Capture for Subsequent Storage Pressure Swing Absorption Device and Process for Separating CO2 from Shifted Syngas and its Capture for Subsequent Storage Project No.: DE-FE0001323 New Jersey Institute of Technology is developing an advanced pressure swing absorption-based (PSAB) device via laboratory-based experiments. The device will be used to accomplish a cyclic process to process low temperature post-shift-reactor synthesis gas resulting from the gasification process into purified hydrogen at high pressure for use by the combustion turbine of an integrated gasification combined cycle (IGCC) plant. The overall goal of the proposed work is to develop an advanced PSAB device and cyclic process for use in a coal-fired IGCC plant to produce purified hydrogen at high pressure and a highly purified CO2 stream suitable for use or sequestration.

410

Automatic Mechetronic Wheel Light Device  

DOE Patents (OSTI)

A wheel lighting device for illuminating a wheel of a vehicle to increase safety and enhance aesthetics. The device produces the appearance of a "ring of light" on a vehicle's wheels as the vehicle moves. The "ring of light" can automatically change in color and/or brightness according to a vehicle's speed, acceleration, jerk, selection of transmission gears, and/or engine speed. The device provides auxiliary indicator lights by producing light in conjunction with a vehicle's turn signals, hazard lights, alarm systems, and etc. The device comprises a combination of mechanical and electronic components and can be placed on the outer or inner surface of a wheel or made integral to a wheel or wheel cover. The device can be configured for all vehicle types, and is electrically powered by a vehicle's electrical system and/or battery.

Khan, Mohammed John Fitzgerald (Silver Spring, MD)

2004-09-14T23:59:59.000Z

411

Automatic Mechetronic Wheel Light Device  

SciTech Connect

A wheel lighting device for illuminating a wheel of a vehicle to increase safety and enhance aesthetics. The device produces the appearance of a "ring of light" on a vehicle's wheels as the vehicle moves. The "ring of light" can automatically change in color and/or brightness according to a vehicle's speed, acceleration, jerk, selection of transmission gears, and/or engine speed. The device provides auxiliary indicator lights by producing light in conjunction with a vehicle's turn signals, hazard lights, alarm systems, and etc. The device comprises a combination of mechanical and electronic components and can be placed on the outer or inner surface of a wheel or made integral to a wheel or wheel cover. The device can be configured for all vehicle types, and is electrically powered by a vehicle's electrical system and/or battery.

Khan, Mohammed John Fitzgerald (Silver Spring, MD)

2004-09-14T23:59:59.000Z

412

S-Band Loads for SLAC Linac  

SciTech Connect

The S-Band loads on the current SLAC linac RF system were designed, in some cases, 40+ years ago to terminate 2-3 MW peak power into a thin layer of coated Kanthal material as the high power absorber [1]. The technology of the load design was based on a flame-sprayed Kanthal wire method onto a base material. During SLAC linac upgrades, the 24 MW peak klystrons were replaced by 5045 klystrons with 65+ MW peak output power. Additionally, SLED cavities were introduced and as a result, the peak power in the current RF setup has increased up to 240 MW peak. The problem of reliable RF peak power termination and RF load lifetime required a careful study and adequate solution. Results of our studies and three designs of S-Band RF load for the present SLAC RF linac system is discussed. These designs are based on the use of low conductivity materials.

Krasnykh, A.; Decker, F.-J.; /SLAC; LeClair, R.; /INTA Technologies, Santa Clara

2012-08-28T23:59:59.000Z

413

Buffalo Gap II Wind Farm | Open Energy Information  

Open Energy Info (EERE)

Gap II Wind Farm Gap II Wind Farm Jump to: navigation, search Name Buffalo Gap II Wind Farm Facility Buffalo Gap II Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Developer AES Corp. Energy Purchaser Direct Energy Location Taylor County TX Coordinates 32.310556°, -100.149167° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":32.310556,"lon":-100.149167,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

414

Olene Gap Space Heating Low Temperature Geothermal Facility | Open Energy  

Open Energy Info (EERE)

Olene Gap Space Heating Low Temperature Geothermal Facility Olene Gap Space Heating Low Temperature Geothermal Facility Jump to: navigation, search Name Olene Gap Space Heating Low Temperature Geothermal Facility Facility Olene Gap Sector Geothermal energy Type Space Heating Location Klamath County, Oregon Coordinates 42.6952767°, -121.6142133° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[]}

415

Closing the Gender Gap in Energy Policy | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

the Gender Gap in Energy Policy the Gender Gap in Energy Policy Closing the Gender Gap in Energy Policy April 7, 2011 - 3:07pm Addthis Melanie A. Kenderdine Melanie A. Kenderdine Director of the Office of Energy Policy and Systems Analysis What are the key facts? There's not just a shortage of women in technical energy-related fields, there's also a shortage of women in energy policy. Women hold only 27 percent of the science and engineering jobs in the United States. Editor's Note: Join the conversation surrounding this year's Clean Energy Ministerial on Twitter via #CEM2. There's a well-documented gender gap for women in science and engineering, or women in the "STEM" fields of science, technology, engineering and math. The numbers are stark: According to the National Science Foundation, women hold only 27 percent of the science and

416

Permanent-magnet-less machine having an enclosed air gap  

DOE Patents (OSTI)

A permanent magnet-less, brushless synchronous system includes a stator that generates a magnetic rotating field when sourced by an alternating current. An uncluttered rotor disposed within the magnetic rotating field is spaced apart from the stator to form an air gap relative to an axis of rotation. A stationary excitation core spaced apart from the uncluttered rotor by an axial air gap and a radial air gap substantially encloses the stationary excitation core. Some permanent magnet-less, brushless synchronous systems include stator core gaps to reduce axial flux flow. Some permanent magnet-less, brushless synchronous systems include an uncluttered rotor coupled to outer laminations. The quadrature-axis inductance may be increased in some synchronous systems. Some synchronous systems convert energy such as mechanical energy into electrical energy (e.g., a generator); other synchronous systems may convert any form of energy into mechanical energy (e.g., a motor).

Hsu, John S. (Oak Ridge, TN)

2012-02-07T23:59:59.000Z

417

Permanent-magnet-less machine having an enclosed air gap  

SciTech Connect

A permanent magnet-less, brushless synchronous system includes a stator that generates a magnetic rotating field when sourced by an alternating current. An uncluttered rotor disposed within the magnetic rotating field is spaced apart from the stator to form an air gap relative to an axis of rotation. A stationary excitation core spaced apart from the uncluttered rotor by an axial air gap and a radial air gap substantially encloses the stationary excitation core. Some permanent magnet-less, brushless synchronous systems include stator core gaps to reduce axial flux flow. Some permanent magnet-less, brushless synchronous systems include an uncluttered rotor coupled to outer laminations. The quadrature-axis inductance may be increased in some synchronous systems. Some synchronous systems convert energy such as mechanical energy into electrical energy (e.g., a generator); other synchronous systems may convert any form of energy into mechanical energy (e.g., a motor).

Hsu, John S.

2013-03-05T23:59:59.000Z

418

Energy gap of Kronig-Penney-type hydrogenated graphene superlattices  

E-Print Network (OSTI)

The electronic structure of graphene-graphane superlattices with armchair interfaces is investigated with first-principles density-functional theory. By separately varying the widths, we find that the energy gap Eg is ...

Lee, Joo-Hyoung

419

Closing gaps in the human genome using sequencing by synthesis  

E-Print Network (OSTI)

The most recent release of the finished human genome contains 260 euchromatic gaps (excluding chromosome Y). Recent work has helped explain a large number of these unresolved regions as 'structural' in nature. Another class ...

Arachchi, Harindra M.

420

Gap junction-mediated electrical transmission: Regulatory mechanisms and plasticity  

E-Print Network (OSTI)

Gap junction-mediated electrical transmission: Regulatory mechanisms and plasticity Alberto E of synaptic transmission: chemical and electrical. While most efforts have been dedicated to the understanding of synaptic transmission: chemical and electrical. In chemical synapses, presynaptic electrical currents

Rash, John E.

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Permanent magnet focused X-band photoinjector  

DOE Patents (OSTI)

A compact high energy photoelectron injector integrates the photocathode directly into a multicell linear accelerator with no drift space between the injection and the linac. High electron beam brightness is achieved by accelerating a tightly focused electron beam in an integrated, multi-cell, X-band rf linear accelerator (linac). The photoelectron linac employs a Plane-Wave-Transformer (PWT) design which provides strong cell-to-cell coupling, easing manufacturing tolerances and costs.

Yu, David U. L. (Rancho Palos Verdes, CA); Rosenzweig, James (Los Angeles, CA)

2002-09-10T23:59:59.000Z

422

Excitonic gap, phase transition, and quantum Hall effect in graphene  

E-Print Network (OSTI)

We suggest that physics underlying the recently observed removal of sublattice and spin degeneracies in graphene in a strong magnetic field describes a phase transition connected with the generation of an excitonic gap. The experimental form of the Hall conductivity is reproduced and the main characteristics of the dynamics are described. Predictions of the behavior of the gap as a function of temperature and a gate voltage are made.

V. P. Gusynin; V. A. Miransky; S. G. Sharapov; I. A. Shovkovy

2006-05-12T23:59:59.000Z

423

Non-H{sub 2}Se, ultra-thin CuInSe{sub 2} devices. Annual subcontract report, November 10, 1992--November 9, 1993  

DOE Green Energy (OSTI)

This report describes advances made during Phase II (November 10, 1992-November 9, 1993) of a three-phase, cost-shared subcontract whose ultimate goal is the demonstration of thin film CuInSe{sub 2} photovoltaic modules prepared by methods adaptable to safe, high yield, high volume manufacturing. At the end of Phase I, EPV became one of the first groups to clear the 10% efficiency barrier for CIS cells prepared by non-H{sub 2}Se selenization. During Phase II a total area efficiency of 12.5% was achieved for a 1 cm{sup 2} cell. The key achievement of Phase II was the production of square foot CIS modules without the use of H{sub 2}Se. This is seen as a crucial step towards the commercialization of CIS. Using a novel interconnect technology, EPV delivered an 8.0% aperture area efficiency mini-module and a 6.2% aperture area efficiency 720 cm{sub 2} module to NREL. On the processing side, advances were made in precursor formation and the selenization profile, both of which contributed to higher quality CIS. The higher band gap quaternary chalcopyrite material CuIn(S{sub x}, Se{sub 1{minus}X}){sub 2} was prepared and 8% cells were fabricated using this material. Device analysis revealed a correlation between long wavelength quantum efficiency and the CIS Cu/In ratio. Temperature dependent studies highlighted the need for high V{sub OC} devices to minimize the impact of the voltage drop at operating temperature. Numerical modeling of module performance was performed in order to identify the correct ZnO sheet resistance for modules. Efforts in Phase III will focus on increase of module efficiency to 9-10%, initiation of an outdoor testing program, preparation of completely uniform CIS plates using second generation selenization equipment, and exploration of alternative precursors for CIS formation.

Delahoy, A.E.; Britt, J.; Faras, F.; Kiss, Z. [Energy Photovoltaics, Inc., Princeton, NY (United States)

1994-09-01T23:59:59.000Z

424

Stripe Forming Architecture of the Gap Gene System  

E-Print Network (OSTI)

In this report, we show that gap genes encode exactly one set of pair-rule stripes, which occur in the native even-skipped position. The core of this work is a detailed analysis that shows how this conclusion follows from the arrangement of gap domains in the embryo. This analysis shows that: (1) pattern forming information is transmitted from gap to pair-rule genes by means of a nonredundant set of morphogenetic gradients, and (2) the stripe forming capability of the gap genes is constrained by the arrangement of these gradients and by the fact that each gap domain consists of a pair of correlated gradients. We also show that in the blastoderm, the regulatory sign of a transcriptional regulator is unlikely to change in a concentration dependent manner. The principal analytic tool used to establish these results is the gene circuit method. Here, this method is applied to examine hybrid data sets consisting of real gene expression data for four gap genes and hypothetica...

John Reinitz David; David Kosman; Carlos E. Vanario-alonso; David H. Sharp

1998-01-01T23:59:59.000Z

425

GAP Final Technical Report 12-14-04  

Science Conference Proceedings (OSTI)

The Genomics Annotation Platform (GAP) was designed to develop new tools for high throughput functional annotation and characterization of protein sequences and structures resulting from genomics and structural proteomics, benchmarking and application of those tools. Furthermore, this platform integrated the genomic scale sequence and structural analysis and prediction tools with the advanced structure prediction and bioinformatics environment of ICM. The development of GAP was primarily oriented towards the annotation of new biomolecular structures using both structural and sequence data. Even though the amount of protein X-ray crystal data is growing exponentially, the volume of sequence data is growing even more rapidly. This trend was exploited by leveraging the wealth of sequence data to provide functional annotation for protein structures. The additional information provided by GAP is expected to assist the majority of the commercial users of ICM, who are involved in drug discovery, in identifying promising drug targets as well in devising strategies for the rational design of therapeutics directed at the protein of interest. The GAP also provided valuable tools for biochemistry education, and structural genomics centers. In addition, GAP incorporates many novel prediction and analysis methods not available in other molecular modeling packages. This development led to signing the first Molsoft agreement in the structural genomics annotation area with the University of oxford Structural Genomics Center. This commercial agreement validated the Molsoft efforts under the GAP project and provided the basis for further development of the large scale functional annotation platform.

Andrew J. Bordner, PhD, Senior Research Scientist

2004-12-14T23:59:59.000Z

426

Using Measurements of Fill Factor at High Irradiance to Deduce Heterobarrier Band Offsets: Preprint  

DOE Green Energy (OSTI)

Using a 2D device simulation tool, we examine the high irradiance behavior of a single junction, GaAs concentrator cell as a function of the doping in the back surface confinement layer. The confinement layer is designed to be a barrier for both holes and electrons in the base of the solar cell. For a p-type base we show that the FF of the cell at high concentrations is a strong function of both the magnitude of the valence band offset and the doping level in the barrier. In short, for a given valence band offset (VBO), there is a critical barrier doping, below which the FF drops rapidly with lower doping. This behavior is confirmed experimentally for a GaInP/GaAs double heterostructure solar cell where the critical doping concentration (at 500 suns) in the back surface confinement layer is ~1e18 cm-3 for a VBO of 300 meV.

Olson, J. M.; Steiner, M. A.; Kanevce, A.

2011-07-01T23:59:59.000Z

427

Model for a web based communication system between clinical engineers and medical device companies  

E-Print Network (OSTI)

The Internet and its use is proliferating. Many medical device manufacturers have their own web sites where they provide useful, but not standardized information about their products and services. Similarly hospitals and clinics also have Web sites that can be accessed for information related to their services, and clinical engineers commonly have Web access. The missing link in this scenario is a Web site that could act as a central point of coned between the clinical engineers and the device manufacturers. Due to huge numbers of both, an elective means of a 'many to many' interaction between the two is presently not available. This project proposes a model of a communication system between clinical engineers and medical device manufacturers based on Internet technologies and relational databases. This model attempts to bridge the communication gap and provide an effective means of information dissemination between device manufacturers and clinical engineers.

Misri, Sandeep

1999-01-01T23:59:59.000Z

428

The Electric and Optical Properties of Doped Small Molecular Organic Light-Emitting Devices  

SciTech Connect

Organic light-emitting devices (OLEDs) constitute a new and exciting emissive display technology. In general, the basic OLED structure consists of a stack of fluorescent organic layers sandwiched between a transparent conducting-anode and metallic cathode. When an appropriate bias is applied to the device, holes are injected from the anode and electrons from the cathode; some of the recombination events between the holes and electrons result in electroluminescence (EL). Until now, most of the efforts in developing OLEDs have focused on display applications, hence on devices within the visible range. However some organic devices have been developed for ultraviolet or infrared emission. Various aspects of the device physics of doped small molecular OLEDs were described and discussed. The doping layer thickness and concentration were varied systematically to study their effects on device performances, energy transfer, and turn-off dynamics. Low-energy-gap DCM2 guest molecules, in either {alpha}-NPD or DPVBi host layers, are optically efficient fluorophores but also generate deep carrier trap-sites. Since their traps reduce the carrier mobility, the current density decreases with increased doping concentration. At the same time, due to efficient energy transfer, the quantum efficiency of the devices is improved by light doping or thin doping thickness, in comparison with the undoped neat devices. However, heavy doping induces concentration quenching effects. Thus, the doping concentration and doping thickness may be optimized for best performance.

Kwang-Ohk Cheon

2003-08-05T23:59:59.000Z

429

Investigating the book-tax income gap : factors which affect the gap and details regarding its most significant component  

E-Print Network (OSTI)

(cont.) In total, my thesis suggests that recent changes in the book-tax income gap may be exogenous and transitory, due to changes to the calculation of book income, general business conditions or other factors which ...

Seidman, Jeri

2008-01-01T23:59:59.000Z

430

Ferromagnetism in Ga1-xMnxP: evidence for inter-Mn exchangemediated bylocalized holes within a detached impurity band  

SciTech Connect

We report an energy gap for hole photoexcitation in ferromagnetic Ga{sub 1-x}Mn{sub x}P that is tunable by Mn concentration (x {le} 0.06) and by compensation with Te donors. For x{approx}0.06, electrical transport is dominated by excitation across this gap above the Curie temperature (T{sub c}) of 60 K and by thermally-activated hopping below T{sub c}. Magnetization measurements reveal a moment of 3.9 {+-} 0.4 {micro}{sub B} per substitutional Mn while the large anomalous Hall signal unambiguously demonstrates that the ferromagnetism is carrier-mediated. In aggregate these data indicate that ferromagnetic exchange is mediated by holes localized in a Mn-derived band that is detached from the valence band.

Scarpulla, M.A.; Cardozo, B.L.; Farshchi, R.; Hlaing Oo, W.M.; McCluskey, M.D.; Yu, K.M.; Dubon, O.D.

2005-01-11T23:59:59.000Z

431

Wide-Gap Thin Film Si n-i-p Solar Cells Deposited by Hot-Wire CVD: Preprint  

DOE Green Energy (OSTI)

High-voltage wide bandgap thin-film Si n-i-p solar cells have been made using the hot-wire chemical vapor deposition (HWCVD) technique. The best open-circuit voltage (Voc) has exceeded 0.94 V in solar cells using HWCVD in the entire n-i-p structure. A Voc of 0.97V has been achieved using HWCVD in the n and i layers and plasma-enhanced (PE) CVD for the p layer. The high voltages are attributed to the wide-gap i layer and an improved p/i interface. The wide-gap i layer is obtained by using low substrate temperatures and sufficient hydrogen dilution during the growth of the i layer to arrive at the amorphous-to-microcrystalline phase transition region. The optical band gap (E04) of the i layer is found to be 1.90 eV. These high-voltage cells also exhibit good fill factors exceeding 0.7 with short-circuit-current densities of 8 to 10 mA/cm2 on bare stainless steel substrates. We have also carried out photoluminescence (PL) spectroscopy studies and found a correlation between Voc and the PL peak energy position.

Wang, Q.; Iwaniczko, E.; Yang, J.; Lord, K.; Guha, S.; Wang, K.; Han, D.

2002-05-01T23:59:59.000Z

432

Identifying and bridging the gaps of ICT integration in primary and secondary education in Indonesia.  

E-Print Network (OSTI)

??The purpose of this study was to explore gaps of ICT integration in Indonesian education in primary and secondary schools in Indonesia. The gaps of… (more)

Mutohar, Agus

2012-01-01T23:59:59.000Z

433

Biomedical devices from ultraviolet LEDs  

NLE Websites -- All DOE Office Websites (Extended Search)

Biomedical devices from ultraviolet LEDs Biomedical devices from ultraviolet LEDs Light-emitting nanocrystal diodes go ultraviolet Biomedical devices with active components could be made from nanostructured systems. February 24, 2012 Researcher working with nanocrystals A researcher at LANL works with nanocrystals. Get Expertise Researcher Sergio Brovelli Physical Chem & Applied Spectroscopy Email Research Team Leader Alberto Paleari University of Milano-Bicocca in Italy Such devices could, for example, selectively activate light-sensitive drugs for better medical treatment or probe for the presence of fluorescent markers in medical diagnostics. LEDs produce light in the ultraviolet range A process for creating glass-based, inorganic light-emitting diodes (LEDs) that produce light in the ultraviolet range has been developed by a

434

Polymer electronic devices and materials.  

Science Conference Proceedings (OSTI)

Polymer electronic devices and materials have vast potential for future microsystems and could have many advantages over conventional inorganic semiconductor based systems, including ease of manufacturing, cost, weight, flexibility, and the ability to integrate a wide variety of functions on a single platform. Starting materials and substrates are relatively inexpensive and amenable to mass manufacturing methods. This project attempted to plant the seeds for a new core competency in polymer electronics at Sandia National Laboratories. As part of this effort a wide variety of polymer components and devices, ranging from simple resistors to infrared sensitive devices, were fabricated and characterized. Ink jet printing capabilities were established. In addition to promising results on prototype devices the project highlighted the directions where future investments must be made to establish a viable polymer electronics competency.

Schubert, William Kent; Baca, Paul Martin; Dirk, Shawn M.; Anderson, G. Ronald; Wheeler, David Roger

2006-01-01T23:59:59.000Z

435

Device-transparent personal storage  

E-Print Network (OSTI)

Users increasingly store data collections such as digital photographs on multiple personal devices, each of which typically presents the user with a storage management interface isolated from the contents of all other ...

Strauss, Jacob A. (Jacob Alo), 1979-

2010-01-01T23:59:59.000Z

436

Optical and optoelectronic fiber devices  

E-Print Network (OSTI)

The ability to integrate materials with disparate electrical, thermal, and optical properties into a single fiber structure enabled the realization of fiber devices with diverse and complex functionalities. Amongst those, ...

Shapira, Ofer, Ph. D. Massachusetts Institute of Technology

2007-01-01T23:59:59.000Z

437

Devices for collecting chemical compounds  

SciTech Connect

A device for sampling chemical compounds from fixed surfaces and related methods are disclosed. The device may include a vacuum source, a chamber and a sorbent material. The device may utilize vacuum extraction to volatilize the chemical compounds from a fixed surface so that they may be sorbed by the sorbent material. The sorbent material may then be analyzed using conventional thermal desorption/gas chromatography/mass spectrometry (TD/GC/MS) instrumentation to determine presence of the chemical compounds. The methods may include detecting release and presence of one or more chemical compounds and determining the efficacy of decontamination. The device may be useful in collection and analysis of a variety of chemical compounds, such as residual chemical warfare agents, chemical attribution signatures and toxic industrial chemicals.

Scott, Jill R; Groenewold, Gary S

2013-12-24T23:59:59.000Z

438

Band Formation in a New England Winter Storm  

Science Conference Proceedings (OSTI)

This case study addresses mechanisms of band formation in a New England winter storm. The structure of the bands and their environment are documented with synoptic observations, radar data, and analyses of instrumented aircraft flights through ...

Dawn G. Wolfsberg; Kerry A. Emanuel; Richard E. Passarelli

1986-08-01T23:59:59.000Z

439

Lih thermal energy storage device  

DOE Patents (OSTI)

A thermal energy storage device for use in a pulsed power supply to store waste heat produced in a high-power burst operation utilizes lithium hydride as the phase change thermal energy storage material. The device includes an outer container encapsulating the lithium hydride and an inner container supporting a hydrogen sorbing sponge material such as activated carbon. The inner container is in communication with the interior of the outer container to receive hydrogen dissociated from the lithium hydride at elevated temperatures.

Olszewski, Mitchell (Knoxville, TN); Morris, David G. (Knoxville, TN)

1994-01-01T23:59:59.000Z

440

Piezo-phototronic effect devices  

DOE Patents (OSTI)

A semiconducting device includes a piezoelectric structure that has a first end and an opposite second end. A first conductor is in electrical communication with the first end and a second conductor is in electrical communication with the second end so as to form an interface therebetween. A force applying structure is configured to maintain an amount of strain in the piezoelectric member sufficient to generate a desired electrical characteristic in the semiconducting device.

Wang, Zhong L.; Yang, Qing

2013-09-10T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Geometry effects of small MOSFET devices  

Science Conference Proceedings (OSTI)

The effects of diminishing MOS inversion channel length or width on device characteristics are discussed. As opposed to the geometric device size, an "electric device size" is established by normalizing all dimensions on an appropriately chosen depletion ...

F. H. Gaensslen

1979-11-01T23:59:59.000Z

442

Wireless device monitoring methods, wireless device monitoring systems, and articles of manufacture  

SciTech Connect

Wireless device monitoring methods, wireless device monitoring systems, and articles of manufacture are described. According to one embodiment, a wireless device monitoring method includes accessing device configuration information of a wireless device present at a secure area, wherein the device configuration information comprises information regarding a configuration of the wireless device, accessing stored information corresponding to the wireless device, wherein the stored information comprises information regarding the configuration of the wireless device, comparing the device configuration information with the stored information, and indicating the wireless device as one of authorized and unauthorized for presence at the secure area using the comparing.

McCown, Steven H. (Rigby, ID); Derr, Kurt W. (Idaho Falls, ID); Rohde, Kenneth W. (Idaho Falls, ID)

2012-05-08T23:59:59.000Z

443

Dynamics of an electron in an rf gap  

Science Conference Proceedings (OSTI)

The purpose of this calculation is to understand the limitation on the energy transfer efficiency of an electron beam to the rf output cavity of a klystron or a lasertron. An output cavity with drift tubes is modeled in this calculation by a region of constant amplitude rf field with exponentially decreasing entrance and exit fringing fields. The exit velocity of an electron traversing such a gap is examined as a function of entrance phase for various values of the ratio of the peak rf cavity voltage to electron entrance voltage. Depending on this ratio, the dynamics of the electron motion can become quite complex. For a gap with fringe fields it is found that, even if the gap voltage and phase are optimized, the maximum energy that can be extracted from a short bunch is always significantly less than 100%. The case in which the electron is created with zero velocity in the gap, and subsequently leaves the gap having extracted energy from the rf field, is also treated. 4 refs., 10 figs.

Farkas, Z.D.; Wilson, P.B.

1989-03-01T23:59:59.000Z

444

Liquid Crystal Polymer-Based Planar Lumped Component Dual-Band Filters For Dual-Band WLAN Systems1  

E-Print Network (OSTI)

TH4A-2 Liquid Crystal Polymer-Based Planar Lumped Component Dual- Band Filters For Dual-Band WLAN River Street, Essex Junction, VT 05495 2 School of Electrical and Computer Engineering, Georgia

Swaminathan, Madhavan

445

Medical Device Failure Analysisâ??Specific Materials  

Science Conference Proceedings (OSTI)

...ASM International, 2012, p 343â??359ASM Handbook, Volume 23, Materials for Medical Devices,B.A. James, Medical Device Failure

446

Health IT Mobile Device Use Case Meeting  

Science Conference Proceedings (OSTI)

Health IT Mobile Device Use Case Meeting. Purpose: ... This meeting will address the Health IT project's first use case, Mobile Devices. ...

2013-04-16T23:59:59.000Z

447

Fluid Submersible Sensing Device - Energy Innovation Portal  

The present invention relates to a fluid submersible sensing device and, more particularly, to such a device having sensing structure provided within ...

448

Improved Gas Sampling Device - Available Technologies - PNNL  

Summary. This is an improved device for gas sampling and analysis in which the design of the device includes features for maximizing the surface area ...

449

Graphene-based nano-antennas for electromagnetic nanocommunications in the terahertz band  

E-Print Network (OSTI)

Abstract—Nanotechnology is enabling the development of devices in a scale ranging from one to a few hundred nanometers. Coordination and information sharing among these nano-devices will lead towards the development of future nanonetworks, boosting the range of applications of nanotechnology in the biomedical, environmental and military fields. Despite the major progress in nano-device design and fabrication, it is still not clear how these atomically precise machines will communicate. Recently, the advancements in graphene-based electronics have opened the door to electromagnetic communications in the nanoscale. In this paper, a new quantum mechanical framework is used to analyze the properties of Carbon Nanotubes (CNTs) as nano-dipole antennas. For this, first the transmission line properties of CNTs are obtained using the tight-binding model as functions of the CNT length, diameter, and edge geometry. Then, relevant antenna parameters such as the fundamental resonant frequency and the input impedance are calculated and compared to those of a nano-patch antenna based on a Graphene Nanoribbon (GNR) with similar dimensions. The results show that for a maximum antenna size in the order of several hundred nanometers (the expected maximum size for a nano-device), both a nano-dipole and a nano-patch antenna will be able to radiate electromagnetic waves in the terahertz band (0.1-10.0 THz). I.

Josep Miquel Jornet; Ian F. Akyildiz

2010-01-01T23:59:59.000Z

450

Buffalo Gap 3 Wind Farm | Open Energy Information  

Open Energy Info (EERE)

Buffalo Gap 3 Wind Farm Buffalo Gap 3 Wind Farm Facility Buffalo Gap 3 Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner AES Wind Generation Developer AES Wind Generation Energy Purchaser Direct Energy Location TX Coordinates 32.310556°, -100.149167° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":32.310556,"lon":-100.149167,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

451

NGNP Project Regulatory Gap Analysis for Modular HTGRs  

SciTech Connect

The Next Generation Nuclear Plant (NGNP) Project Regulatory Gap Analysis (RGA) for High Temperature Gas-Cooled Reactors (HTGR) was conducted to evaluate existing regulatory requirements and guidance against the design characteristics specific to a generic modular HTGR. This final report presents results and identifies regulatory gaps concerning current Nuclear Regulatory Commission (NRC) licensing requirements that apply to the modular HTGR design concept. This report contains appendices that highlight important HTGR licensing issues that were found during the RGA study. The information contained in this report will be used to further efforts in reconciling HTGR-related gaps in the NRC licensing structure, which has to date largely focused on light water reactor technology.

Wayne Moe

2011-09-01T23:59:59.000Z

452

Hybrid Band effects program (Lockheed Martin shared vision CRADA)  

Science Conference Proceedings (OSTI)

Hybrid Band{trademark} (H-band) is a Lockheed Martin Missiles and Fire Control (LMMFC) designation for a specific RF modulation that causes disruption of select electronic components and circuits. H-Band enables conventional high-power microwave (HPM) effects (with a center frequency of 1 to 2 GHz, for example) using a higher frequency carrier signal. The primary technical objective of this project was to understand the fundamental physics of Hybrid Band{trademark} Radio Frequency effects on electronic systems. The follow-on objective was to develop and validate a Hybrid Band{trademark} effects analysis process.

Bacon, L. D.

2012-03-01T23:59:59.000Z

453

The gender gap on concept inventories in physics: what is consistent, what is inconsistent, and what factors influence the gap?  

E-Print Network (OSTI)

We review the literature on the gender gap on concept inventories in physics. Across studies, men consistently score higher on pre-tests of the Force Concept Inventory (FCI) and Force and Motion Conceptual Evaluation (FMCE) by about 10%, and in most cases score higher on post-tests as well, also by about 10%. The average difference in normalized gain is about 6%. This difference is much smaller than the average difference in normalized gain between traditional lecture and interactive engagement (25%), but is large enough that it could impact the results of studies comparing the effectiveness of different teaching methods. Based on our analysis of 24 published articles comparing the impact of 34 factors that could potentially influence the gender gap, no single factor is sufficient to explain the gap. Several high-profile studies that have claimed to account for or reduce the gender gap have failed to be replicated, suggesting that isolated claims of explanations of the gender gap should be interpreted with ca...

Madsen, Adrian; Sayre, Eleanor C

2013-01-01T23:59:59.000Z

454

Radiation-tolerant imaging device  

DOE Patents (OSTI)

A barrier at a uniform depth for an entire wafer is used to produce imaging devices less susceptible to noise pulses produced by the passage of ionizing radiation. The barrier prevents charge created in the bulk silicon of a CCD detector or a semiconductor logic or memory device from entering the collection volume of each pixel in the imaging device. The charge barrier is a physical barrier, a potential barrier, or a combination of both. The physical barrier is formed by an SiO.sub.2 insulator. The potential barrier is formed by increasing the concentration of majority carriers (holes) to combine with the electron's generated by the ionizing radiation. A manufacturer of CCD imaging devices can produce radiation-tolerant devices by merely changing the wafer type fed into his process stream from a standard wafer to one possessing a barrier beneath its surface, thus introducing a very small added cost to his production cost. An effective barrier type is an SiO.sub.2 layer.

Colella, Nicholas J. (Livermore, CA); Kimbrough, Joseph R. (Pleasanton, CA)

1996-01-01T23:59:59.000Z

455

Dual control active superconductive devices  

DOE Patents (OSTI)

A superconducting active device has dual control inputs and is constructed such that the output of the device is effectively a linear mix of the two input signals. The device is formed of a film of superconducting material on a substrate and has two main conduction channels, each of which includes a weak link region. A first control line extends adjacent to the weak link region in the first channel and a second control line extends adjacent to the weak link region in the second channel. The current flowing from the first channel flows through an internal control line which is also adjacent to the weak link region of the second channel. The weak link regions comprise small links of superconductor, separated by voids, through which the current flows in each channel. Current passed through the control lines causes magnetic flux vortices which propagate across the weak link regions and control the resistance of these regions. The output of the device taken across the input to the main channels and the output of the second main channel and the internal control line will constitute essentially a linear mix of the two input signals imposed on the two control lines. The device is especially suited to microwave applications since it has very low input capacitance, and is well suited to being formed of high temperature superconducting materials since all of the structures may be formed coplanar with one another on a substrate.

Martens, Jon S. (Albuquerque, NM); Beyer, James B. (Madison, WI); Nordman, James E. (Madison, WI); Hohenwarter, Gert K. G. (Madison, WI)

1993-07-20T23:59:59.000Z

456

Aerosol can waste disposal device  

DOE Patents (OSTI)

Disclosed is a device for removing gases and liquid from containers. The device punctures the bottom of a container for purposes of exhausting gases and liquid from the container without their escaping into the atmosphere. The device includes an inner cup or cylinder having a top portion with an open end for receiving a container and a bottom portion which may be fastened to a disposal or waste container in a substantially leak-proof manner. A piercing device is mounted in the lower portion of the inner cylinder for puncturing the can bottom placed in the inner cylinder. An outer cylinder having an open end and a closed end fits over the top portion of the inner cylinder in telescoping engagement. A force exerted on the closed end of the outer cylinder urges the bottom of a can in the inner cylinder into engagement with the piercing device in the bottom of the inner cylinder to form an opening in the can bottom, thereby permitting the contents of the can to enter the disposal container. 7 figures.

O' Brien, M.D.; Klapperick, R.L.; Bell, C.

1993-12-21T23:59:59.000Z

457

Semiconductor-based, large-area, flexible, electronic devices  

SciTech Connect

Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Goyal, Amit (Knoxville, TN)

2011-03-15T23:59:59.000Z

458

Survey of hydrogen monitoring devices  

DOE Green Energy (OSTI)

Presented are results of a survey of commercially available monitoring devices suitable for hydrogen detection in the secondary containment vessel of a nuclear power plant during the post postulated accident period. Available detectors were grouped into the following five classes: combustion, solid state, electrochemical, thermal conductivity, and absorption. The performance of most available sensors is likely to deteriorate when exposed to the postulated conditions which include moisture, which could be at high temperature, and radioactive noncondensibles. Of the commercial devices, those using metallic filament thermal conductivity detectors seem least susceptible to performance change. Absorption detectors are best suited for this monitoring task but the only available device is designed for pipeline corrosion assessment. Initiation of experimental study to assess apparent deficiencies of commercial detectors is recommended. Also recommended is an analytical/experimental effort to determine the optimum detector array for monitoring in the secondary containment vessels.

Lai, W.

1981-01-01T23:59:59.000Z

459

Spectral utilization in thermophotovoltaic devices  

DOE Green Energy (OSTI)

Multilayer assemblies of epitaxially-grown, III-V semiconductor materials are being investigated for use in thermophotovoltaic (TPV) energy conversion applications. It has been observed that thick, highly-doped semiconductor layers within cell architectures dominate the parasitic free-carrier absorption (FCA) of devices at wavelengths above the bandgap of the semiconductor material. In this work, the wavelength-dependent, free-carrier absorption of p- and n-type InGaAs layers grown epitaxially onto semi-insulating (SI) InP substrates has been measured and related to the total absorption of long-wavelength photons in thermophotovoltaic devices. The optical responses of the TPV cells are then used in the calculation of spectral utilization factors and device efficiencies.

Clevenger, M.B.; Murray, C.S.

1997-12-31T23:59:59.000Z

460

Eastern Band of Cherokee Strategic Energy Plan  

SciTech Connect

The Eastern Band of Cherokee Indians was awarded a grant under the U.S. Department of Energy Tribal Energy Program (TEP) to develop a Tribal Strategic Energy Plan (SEP). The grant, awarded under the “First Steps” phase of the TEP, supported the development of a SEP that integrates with the Tribe’s plans for economic development, preservation of natural resources and the environment, and perpetuation of Tribal heritage and culture. The Tribe formed an Energy Committee consisting of members from various departments within the Tribal government. This committee, together with its consultant, the South Carolina Institute for Energy Studies, performed the following activities: • Develop the Tribe’s energy goals and objectives • Establish the Tribe’s current energy usage • Identify available renewable energy and energy efficiency options • Assess the available options versus the goals and objectives • Create an action plan for the selected options

Souther Carolina Institute of energy Studies-Robert Leitner

2009-01-30T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Band offsets of Al{sub 2}O{sub 3} and HfO{sub 2} oxides deposited by atomic layer deposition technique on hydrogenated diamond  

SciTech Connect

High-k oxide insulators (Al{sub 2}O{sub 3} and HfO{sub 2}) have been deposited on a single crystalline hydrogenated diamond (H-diamond) epilayer by an atomic layer deposition technique at temperature as low as 120 Degree-Sign C. Interfacial electronic band structures are characterized by X-ray photoelectron spectroscopy. Based on core-level binding energies and valence band maximum values, valence band offsets are found to be 2.9 {+-} 0.2 and 2.6 {+-} 0.2 eV for Al{sub 2}O{sub 3}/H-diamond and HfO{sub 2}/H-diamond heterojunctions, respectively. Band gaps of the Al{sub 2}O{sub 3} and HfO{sub 2} have been determined to be 7.2 {+-} 0.2 and 5.4 {+-} 0.2 eV by measuring O 1s energy loss spectra, respectively. Both the Al{sub 2}O{sub 3}/H-diamond and HfO{sub 2}/H-diamond heterojunctions are concluded to be type-II staggered band configurations with conduction band offsets of 1.2 {+-} 0.2 and 2.7 {+-} 0.2 eV, respectively.

Liu, J. W.; Liao, M. Y.; Imura, M. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Koide, Y. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Center of Materials Research for Low Carbon Emission, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2012-12-17T23:59:59.000Z

462

Acoustic Inspection Devices: Detecting the Undetectable  

Acoustic Inspection Devices: Detecting the Undetectable Emerging homeland security threats and increasingly sophisticated adversaries have heightened ...

463

Bridging the Efficiency Gap: Commercial Packaged Rooftop Air Conditioners  

NLE Websites -- All DOE Office Websites (Extended Search)

Bridging the Efficiency Gap: Commercial Packaged Rooftop Air Conditioners Bridging the Efficiency Gap: Commercial Packaged Rooftop Air Conditioners Title Bridging the Efficiency Gap: Commercial Packaged Rooftop Air Conditioners Publication Type Conference Proceedings Year of Publication 2000 Authors Shugars, John, Philip Coleman, Christopher T. Payne, and Laura Van Wie McGrory Conference Name Proceedings from the 2000 ACEEE Summer Study on Energy Efficiency in Buildings Volume 10 Pagination 217-226 Date Published 01/2000 Abstract The energy efficiency ofmany products has increased markedly over the past decade. A conspicuous exception to this trend is commercialpackaged rooftop air conditioners, which have experiencedlittle to no efficiency improvement since 1992 when the Energy Policy Act of 1992 imposed federal minimum standards. Packaged rooftop units have been estimated to use on the order of76 billion kWh annually in the US, at a cost ofroughly $5.6 billion. Sales of these units are growing, and the majority of units sold have energy efficiency ratios (EERs) at orjust above the current national minimum efficiency standards. In this paper we document the static efficiencies ofcommercialpackaged air conditioners, explore the reasons behindthis efficiency gap, and assess opportunities for overcoming the barriers to efficiency improvements in these products.

464

Bridging the semantic gap in sports video retrieval and summarization  

Science Conference Proceedings (OSTI)

One of the major challenges facing current media management systems and related applications is the so-called ''semantic gap'' between the rich meaning that a user desires and the shallowness of the content descriptions that are automatically extracted ... Keywords: Event detection, Semantic video analysis, Video summarization

Baoxin Li; James H. Errico; Hao Pan; Ibrahim Sezan

2004-09-01T23:59:59.000Z

465

Thermally Driven Gap Winds into the Mexico City Basin  

Science Conference Proceedings (OSTI)

A southeasterly flow in the form of a low-level jet that enters the Mexico City basin through a mountain gap in the southeast corner of the basin developed consistently in the afternoons or early evenings during a four-week 1997 winter field ...

J. C. Doran; S. Zhong

2000-08-01T23:59:59.000Z

466

Observations of gas flows inside a protoplanetary gap  

E-Print Network (OSTI)

Gaseous giant planet formation is thought to occur in the first few million years following stellar birth. Models predict that giant planet formation carves a deep gap in the dust component (shallower in the gas). Infrared observations of the disk around the young star HD142527, at ~140pc, found an inner disk ~10AU in radius, surrounded by a particularly large gap, with a disrupted outer disk beyond 140AU, indicative of a perturbing planetary-mass body at ~90 AU. From radio observations, the bulk mass is molecular and lies in the outer disk, whose continuum emission has a horseshoe morphology. The vigorous stellar accretion rate would deplete the inner disk in less than a year, so in order to sustain the observed accretion, matter must flow from the outer-disk into the cavity and cross the gap. In dynamical models, the putative protoplanets channel outer-disk material into gap-crossing bridges that feed stellar accretion through the inner disk. Here we report observations with the Atacama Large Millimetre Arr...

Casassus, Simon; M., Sebastian Perez; Dent, William R F; Fomalont, Ed; Hagelberg, Janis; Hales, Antonio; Jordán, Andrés; Mawet, Dimitri; Ménard, Francois; Wootten, Al; Wilner, David; Hughes, A Meredith; Schreiber, Matthias R; Girard, Julien H; Ercolano, Barbara; Canovas, Hector; Román, Pablo E; Salinas, Vachail

2013-01-01T23:59:59.000Z

467

Gap junction-mediated electrical transmission: Regulatory mechanisms and plasticity  

E-Print Network (OSTI)

Gap junction-mediated electrical transmission: Regulatory mechanisms and plasticity Alberto E of synaptic transmission: chemical and electrical. While most efforts have been dedicated to the understanding in revised form 16 May 2012 Accepted 23 May 2012 Available online 31 May 2012 Keywords: Electrical synapse

Rash, John E.

468

Addressing the semantic gap between video sensors and applications  

Science Conference Proceedings (OSTI)

In this paper, we propose a framework to support the bridging of applications and computer-vision based sensor networks. We argue that the semantic gap, the difference between the data collected in a