National Library of Energy BETA

Sample records for band gap devices

  1. Voltage-Matched, Monolithic, Multi-Band-Gap Devices

    DOE Patents [OSTI]

    Wanlass, M. W.; Mascarenhas, A.

    2006-08-22

    Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a string of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

  2. Voltage-matched, monolithic, multi-band-gap devices

    DOE Patents [OSTI]

    Wanlass, Mark W.; Mascarenhas, Angelo

    2006-08-22

    Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a sting of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

  3. Thermophotovoltaic conversion using selective infrared line emitters and large band gap photovoltaic devices

    DOE Patents [OSTI]

    Brandhorst, Jr., Henry W.; Chen, Zheng

    2000-01-01

    Efficient thermophotovoltaic conversion can be performed using photovoltaic devices with a band gap in the 0.75-1.4 electron volt range, and selective infrared emitters chosen from among the rare earth oxides which are thermally stimulated to emit infrared radiation whose energy very largely corresponds to the aforementioned band gap. It is possible to use thermovoltaic devices operating at relatively high temperatures, up to about 300.degree. C., without seriously impairing the efficiency of energy conversion.

  4. P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same

    DOE Patents [OSTI]

    Guha, Subhendu; Ovshinsky, Stanford R.

    1988-10-04

    An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

  5. Periodic dielectric structure for production of photonic band gap and devices incorporating the same

    DOE Patents [OSTI]

    Ho, Kai-Ming; Chan, Che-Ting; Soukoulis, Costas

    1994-08-02

    A periodic dielectric structure which is capable of producing a photonic band gap and which is capable of practical construction. The periodic structure is formed of a plurality of layers, each layer being formed of a plurality of rods separated by a given spacing. The material of the rods contrasts with the material between the rods to have a refractive index contrast of at least two. The rods in each layer are arranged with their axes parallel and at a given spacing. Adjacent layers are rotated by 90.degree., such that the axes of the rods in any given layer are perpendicular to the axes in its neighbor. Alternating layers (that is, successive layers of rods having their axes parallel such as the first and third layers) are offset such that the rods of one are about at the midpoint between the rods of the other. A four-layer periocity is thus produced, and successive layers are stacked to form a three-dimensional structure which exhibits a photonic band gap. By virtue of forming the device in layers of elongate members, it is found that the device is susceptible of practical construction.

  6. Numerical Simulation of the Performance Characteristics, Instability, and Effects of Band Gap Grading in Cadmium Telluride Based Photovoltaic Devices

    SciTech Connect (OSTI)

    Michael David Petersen

    2001-05-01

    Using computer simulations, the performance of several CdTe based photovoltaic structures has been studied. The advantages and disadvantages of band gap grading, through the use of (Zn,Cd)Te, have also been investigated in these structures. Grading at the front interface between a CdS window layer and a CdTe absorber layer, can arise due to interdiffusion between the materials during growth or due to the intentional variation of the material composition. This grading has been shown to improve certain performance metrics, such as the open-circuit voltage, while degrading others, such as the fill factor, depending on the amount and distance of the grading. The presence of a Schottky barrier as the back contact has also been shown to degrade the photovoltaic performance of the device, resulting in a characteristic IV curve. However, with the appropriate band gap grading at the back interface, it has been shown that the performance can be enhanced through more efficient carrier collection. These results were then correlated with experimental observations of the performance degradation in devices subjected to light and heat stress.

  7. Numerical Simulation of the Performance Characteristics, Instability, and Effects of Band Gap Grading in Cadmium Telluride Based Photovoltaic Devices

    SciTech Connect (OSTI)

    Michael David Petersen

    2001-06-27

    Using computer simulations, the performance of several CdTe based photovoltaic structures has been studied. The advantages and disadvantages of band gap grading, through the use of (Zn, Cd)Te, have also been investigated in these structures. Grading at the front interface between a CdS window layer and a CdTe absorber layer, can arise due to interdiffusion between the materials during growth or due to the intentional variation of the material composition. This grading has been shown to improve certain performance metrics, such as the open-circuit voltage, while degrading others, such as the fill factor, depending on the amount and distance of the grading. The presence of a Schottky barrier as the back contact has also been shown to degrade the photovoltaic performance of the device, resulting in a characteristic IV curve. However, with the appropriate band gap grading at the back interface, it has been shown that the performance can be enhanced through more efficient carrier collection. These results were then correlated with experimental observations of the performance degradation in devices subjected to light and heat stress.

  8. Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same

    DOE Patents [OSTI]

    Abraham, Marvin M.; Chen, Yok; Kernohan, Robert H.

    1981-01-01

    This invention relates to novel and comparatively inexpensive semiconductor devices utilizing semiconducting alkaline-earth-oxide crystals doped with alkali metal. The semiconducting crystals are produced by a simple and relatively inexpensive process. As a specific example, a high-purity lithium-doped MgO crystal is grown by conventional techniques. The crystal then is heated in an oxygen-containing atmosphere to form many [Li].degree. defects therein, and the resulting defect-rich hot crystal is promptly quenched to render the defects stable at room temperature and temperatures well above the same. Quenching can be effected conveniently by contacting the hot crystal with room-temperature air.

  9. Multiple gap photovoltaic device

    DOE Patents [OSTI]

    Dalal, Vikram L.

    1981-01-01

    A multiple gap photovoltaic device having a transparent electrical contact adjacent a first cell which in turn is adjacent a second cell on an opaque electrical contact, includes utilizing an amorphous semiconductor as the first cell and a crystalline semiconductor as the second cell.

  10. Photonic band gap structure simulator

    DOE Patents [OSTI]

    Chen, Chiping; Shapiro, Michael A.; Smirnova, Evgenya I.; Temkin, Richard J.; Sirigiri, Jagadishwar R.

    2006-10-03

    A system and method for designing photonic band gap structures. The system and method provide a user with the capability to produce a model of a two-dimensional array of conductors corresponding to a unit cell. The model involves a linear equation. Boundary conditions representative of conditions at the boundary of the unit cell are applied to a solution of the Helmholtz equation defined for the unit cell. The linear equation can be approximated by a Hermitian matrix. An eigenvalue of the Helmholtz equation is calculated. One computation approach involves calculating finite differences. The model can include a symmetry element, such as a center of inversion, a rotation axis, and a mirror plane. A graphical user interface is provided for the user's convenience. A display is provided to display to a user the calculated eigenvalue, corresponding to a photonic energy level in the Brilloin zone of the unit cell.

  11. Narrow band gap amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.; Mahan, A.H.

    1985-01-10

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  12. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Wednesday, 26 March 2008 00:00 Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest

  13. Special purpose modes in photonic band gap fibers

    DOE Patents [OSTI]

    Spencer, James; Noble, Robert; Campbell, Sara

    2013-04-02

    Photonic band gap fibers are described having one or more defects suitable for the acceleration of electrons or other charged particles. Methods and devices are described for exciting special purpose modes in the defects including laser coupling schemes as well as various fiber designs and components for facilitating excitation of desired modes. Results are also presented showing effects on modes due to modes in other defects within the fiber and due to the proximity of defects to the fiber edge. Techniques and devices are described for controlling electrons within the defect(s). Various applications for electrons or other energetic charged particles produced by such photonic band gap fibers are also described.

  14. Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

    DOE Patents [OSTI]

    Wanlass, Mark W.

    1994-01-01

    A single-junction solar cell having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of "pinning" the optimum band gap for a wide range of operating conditions at a value of 1.14.+-.0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap.

  15. Fabrication of photonic band gap materials

    DOE Patents [OSTI]

    Constant, Kristen; Subramania, Ganapathi S.; Biswas, Rana; Ho, Kai-Ming

    2002-01-15

    A method for forming a periodic dielectric structure exhibiting photonic band gap effects includes forming a slurry of a nano-crystalline ceramic dielectric or semiconductor material and monodisperse polymer microspheres, depositing a film of the slurry on a substrate, drying the film, and calcining the film to remove the polymer microspheres therefrom. The film may be cold-pressed after drying and prior to calcining. The ceramic dielectric or semiconductor material may be titania, and the polymer microspheres may be polystyrene microspheres.

  16. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key

  17. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key

  18. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key

  19. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key

  20. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome silicon's superb collection of materials properties as well as sophisticated fabrication technologies refined by six decades of effort by materials scientists and engineers. Graphene, one of the latest contenders, has a rather impressive list of features of its own but has lacked a key

  1. Single-junction solar cells with the optimum band gap for terrestrial concentrator applications

    DOE Patents [OSTI]

    Wanlass, M.W.

    1994-12-27

    A single-junction solar cell is described having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of ''pinning'' the optimum band gap for a wide range of operating conditions at a value of 1.14[+-]0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap. 7 figures.

  2. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic...

  3. Electron Elevator: Excitations across the Band Gap via a Dynamical Gap

    Office of Scientific and Technical Information (OSTI)

    State (Journal Article) | SciTech Connect Electron Elevator: Excitations across the Band Gap via a Dynamical Gap State Citation Details In-Document Search This content will become publicly available on January 26, 2017 Title: Electron Elevator: Excitations across the Band Gap via a Dynamical Gap State Authors: Lim, A. ; Foulkes, W. M. C. ; Horsfield, A. P. ; Mason, D. R. ; Schleife, A. ; Draeger, E. W. ; Correa, A. A. Publication Date: 2016-01-27 OSTI Identifier: 1236285 Grant/Contract

  4. Spark gap device for precise switching

    DOE Patents [OSTI]

    Boettcher, Gordon E.

    1984-01-01

    A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centrigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations.

  5. Spark gap device for precise switching

    DOE Patents [OSTI]

    Boettcher, G.E.

    1984-10-02

    A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations. 3 figs.

  6. Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan; Droubay, Timothy; Bowden, Mark; Chrysler, Matthew; Su, Dong; Chambers, Scott A.; Ngai, Joseph H.

    2015-02-09

    The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZrxTi1-xO₃ and Ge, in which the band gap of the former is enhanced with Zr content x. We presentmore » structural and electrical characterization of SrZrxTi1-xO₃-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.« less

  7. Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

    SciTech Connect (OSTI)

    Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan; Droubay, Timothy; Bowden, Mark; Chrysler, Matthew; Su, Dong; Chambers, Scott A.; Ngai, Joseph H.

    2015-02-09

    The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZrxTi1-xO? and Ge, in which the band gap of the former is enhanced with Zr content x. We present structural and electrical characterization of SrZrxTi1-xO?-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.

  8. Band gap engineering strategy via polarization rotation in perovskite ferroelectrics

    SciTech Connect (OSTI)

    Wang, Fenggong Grinberg, Ilya; Rappe, Andrew M.

    2014-04-14

    We propose a strategy to engineer the band gaps of perovskite oxide ferroelectrics, supported by first principles calculations. We find that the band gaps of perovskites can be substantially reduced by as much as 1.2 eV through local rhombohedral-to-tetragonal structural transition. Furthermore, the strong polarization of the rhombohedral perovskite is largely preserved by its tetragonal counterpart. The B-cation off-center displacements and the resulting enhancement of the antibonding character in the conduction band give rise to the wider band gaps of the rhombohedral perovskites. The correlation between the structure, polarization orientation, and electronic structure lays a good foundation for understanding the physics of more complex perovskite solid solutions and provides a route for the design of photovoltaic perovskite ferroelectrics.

  9. Amorphous copper tungsten oxide with tunable band gaps

    SciTech Connect (OSTI)

    Chen Le; Shet, Sudhakar; Tang Houwen; Wang Heli; Yan Yanfa; Turner, John; Al-Jassim, Mowafak; Ahn, Kwang-soon

    2010-08-15

    We report on the synthesis of amorphous copper tungsten oxide thin films with tunable band gaps. The thin films are synthesized by the magnetron cosputtering method. We find that due to the amorphous nature, the Cu-to-W ratio in the films can be varied without the limit of the solubility (or phase separation) under appropriate conditions. As a result, the band gap and conductivity type of the films can be tuned by controlling the film composition. Unfortunately, the amorphous copper tungsten oxides are not stable in aqueous solution and are not suitable for the application of photoelectrochemical splitting of water. Nonetheless, it provides an alternative approach to search for transition metal oxides with tunable band gaps.

  10. Band gap engineering for graphene by using Na{sup +} ions

    SciTech Connect (OSTI)

    Sung, S. J.; Lee, P. R.; Kim, J. G.; Ryu, M. T.; Park, H. M.; Chung, J. W.

    2014-08-25

    Despite the noble electronic properties of graphene, its industrial application has been hindered mainly by the absence of a stable means of producing a band gap at the Dirac point (DP). We report a new route to open a band gap (E{sub g}) at DP in a controlled way by depositing positively charged Na{sup +} ions on single layer graphene formed on 6H-SiC(0001) surface. The doping of low energy Na{sup +} ions is found to deplete the ?* band of graphene above the DP, and simultaneously shift the DP downward away from Fermi energy indicating the opening of E{sub g}. The band gap increases with increasing Na{sup +} coverage with a maximum E{sub g}?0.70?eV. Our core-level data, C 1s, Na 2p, and Si 2p, consistently suggest that Na{sup +} ions do not intercalate through graphene, but produce a significant charge asymmetry among the carbon atoms of graphene to cause the opening of a band gap. We thus provide a reliable way of producing and tuning the band gap of graphene by using Na{sup +} ions, which may play a vital role in utilizing graphene in future nano-electronic devices.

  11. Continuously controlled optical band gap in oxide semiconductor thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-02-02

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. In conclusion, chargemore » density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques.« less

  12. Band-gap and band-edge engineering of multicomponent garnet scintillators from first principles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yadav, Satyesh K.; Uberuaga, Blas P.; Nikl, Martin; Jiang, Chao; Stanek, Christopher R.

    2015-11-24

    Complex doping schemes in R3Al5O12 (where R is the rare-earth element) garnet compounds have recently led to pronounced improvements in scintillator performance. Specifically, by admixing lutetium and yttrium aluminate garnets with gallium and gadolinium, the band gap is altered in a manner that facilitates the removal of deleterious electron trapping associated with cation antisite defects. Here, we expand upon this initial work to systematically investigate the effect of substitutional admixing on the energy levels of band edges. Density-functional theory and hybrid density-functional theory (HDFT) are used to survey potential admixing candidates that modify either the conduction-band minimum (CBM) or valence-bandmore » maximum (VBM). We consider two sets of compositions based on Lu3B5O12 where B is Al, Ga, In, As, and Sb, and R3Al5O12, where R is Lu, Gd, Dy, and Er. We find that admixing with various R cations does not appreciably affect the band gap or band edges. In contrast, substituting Al with cations of dissimilar ionic radii has a profound impact on the band structure. We further show that certain dopants can be used to selectively modify only the CBM or the VBM. Specifically, Ga and In decrease the band gap by lowering the CBM, while As and Sb decrease the band gap by raising the VBM, the relative change in band gap is quantitatively validated by HDFT. These results demonstrate a powerful approach to quickly screen the impact of dopants on the electronic structure of scintillator compounds, identifying those dopants which alter the band edges in very specific ways to eliminate both electron and hole traps responsible for performance limitations. Furthermore, this approach should be broadly applicable for the optimization of electronic and optical performance for a wide range of compounds by tuning the VBM and CBM.« less

  13. Systematic study of photoluminescence upon band gap excitation in

    Office of Scientific and Technical Information (OSTI)

    perovskite-type titanates R {sub 1/2}Na{sub 1/2}TiO{sub 3}:Pr (R=La, Gd, Lu, and Y) (Journal Article) | SciTech Connect Systematic study of photoluminescence upon band gap excitation in perovskite-type titanates R {sub 1/2}Na{sub 1/2}TiO{sub 3}:Pr (R=La, Gd, Lu, and Y) Citation Details In-Document Search Title: Systematic study of photoluminescence upon band gap excitation in perovskite-type titanates R {sub 1/2}Na{sub 1/2}TiO{sub 3}:Pr (R=La, Gd, Lu, and Y) Pr{sup 3+}-doped perovskites R

  14. Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

    SciTech Connect (OSTI)

    Dey, Anup; Maiti, Biswajit; Chanda, Debasree

    2014-04-14

    A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k{sup ?}) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg{sub 1?x}Cd{sub x}Te, and In{sub 1?x}Ga{sub x}As{sub y}P{sub 1?y} lattice matched to InP, as example of IIIV compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

  15. Utility-Scale Solar Power Converter: Agile Direct Grid Connect Medium Voltage 4.7-13.8 kV Power Converter for PV Applications Utilizing Wide Band Gap Devices

    SciTech Connect (OSTI)

    2012-01-25

    Solar ADEPT Project: Satcon is developing a compact, lightweight power conversion device that is capable of taking utility-scale solar power and outputting it directly into the electric utility grid at distribution voltage levels—eliminating the need for large transformers. Transformers “step up” the voltage of the power that is generated by a solar power system so it can be efficiently transported through transmission lines and eventually “stepped down” to usable voltages before it enters homes and businesses. Power companies step up the voltage because less electricity is lost along transmission lines when the voltage is high and current is low. Satcon’s new power conversion devices will eliminate these heavy transformers and connect a utility-scale solar power system directly to the grid. Satcon’s modular devices are designed to ensure reliability—if one device fails it can be bypassed and the system can continue to run.

  16. Method for Creating Photonic Band Gap Materials - Energy Innovation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    have the potential to change the way optoelectronic devices, such as photodiodes, LEDs, and integrated optical circuit elements, are designed and used. Ames Laboratory...

  17. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Wednesday, 26 March 2008 00:00 Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome...

  18. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic devices, have to overcome...

  19. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the third opens a band-gap in the normal way. Low-dimensional metals have attracted much attention because of their unique electronic properties, which often lead to exotic...

  20. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Gap-Opening Mechanism in a Triple-Band Metal Print A "wire" of indium only one or a few atoms wide grown on a silicon surface comprises an ideal test laboratory for studying...

  1. Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

    DOE Patents [OSTI]

    Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

    2001-01-01

    A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

  2. Local strain effect on the band gap engineering of graphene by a first-principles study

    SciTech Connect (OSTI)

    Gui, Gui; Booske, John; Ma, Zhenqiang E-mail: mazq@engr.wisc.edu; Morgan, Dane; Zhong, Jianxin E-mail: mazq@engr.wisc.edu

    2015-02-02

    We have systematically investigated the effect of local strain on electronic properties of graphene by first-principles calculations. Two major types of local strain, oriented along the zigzag and the armchair directions, have been studied. We find that local strain with a proper range and strength along the zigzag direction results in opening of significant band gaps in graphene, on the order of 10{sup ?1?}eV; whereas, local strain along the armchair direction cannot open a significant band gap in graphene. Our results show that appropriate local strain can effectively open and tune the band gap in graphene; therefore, the electronic and transport properties of graphene can also be modified.

  3. Method of manufacturing flexible metallic photonic band gap structures, and structures resulting therefrom

    DOE Patents [OSTI]

    Gupta, Sandhya; Tuttle, Gary L.; Sigalas, Mihail; McCalmont, Jonathan S.; Ho, Kai-Ming

    2001-08-14

    A method of manufacturing a flexible metallic photonic band gap structure operable in the infrared region, comprises the steps of spinning on a first layer of dielectric on a GaAs substrate, imidizing this first layer of dielectric, forming a first metal pattern on this first layer of dielectric, spinning on and imidizing a second layer of dielectric, and then removing the GaAs substrate. This method results in a flexible metallic photonic band gap structure operable with various filter characteristics in the infrared region. This method may be used to construct multi-layer flexible metallic photonic band gap structures. Metal grid defects and dielectric separation layer thicknesses are adjusted to control filter parameters.

  4. Structural studies and band gap tuning of Cr doped ZnO nanoparticles

    SciTech Connect (OSTI)

    Srinet, Gunjan Kumar, Ravindra Sajal, Vivek

    2014-04-24

    Structural and optical properties of Cr doped ZnO nanoparticles prepared by the thermal decomposition method are presented. X-ray diffraction studies confirmed the substitution of Cr on Zn sites without changing the wurtzite structure of ZnO. Modified form of W-H equations was used to calculate various physical parameters and their variation with Cr doping is discussed. Significant red shift was observed in band gap, i.e., a band gap tuning is achieved by Cr doping which could eventually be useful for optoelectronic applications.

  5. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Gap-Opening Mechanism in a Triple-Band Metal A New Gap-Opening Mechanism in a Triple-Band Metal Print Wednesday, 23 February 2005 00:00 A "wire" of indium only one or a few atoms wide grown on a silicon surface comprises an ideal test laboratory for studying one-dimensional (1D) metals. A new example comes from a collaboration between researchers from Yonsei University in Korea, the ALS, and the University of Oregon, who have discovered that the phase transition from metal to

  6. Electronegativity calculation of bulk modulus and band gap of ternary ZnO-based alloys

    SciTech Connect (OSTI)

    Li, Keyan; Kang, Congying [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China)] [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China); Xue, Dongfeng, E-mail: dongfeng@ciac.jl.cn [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China) [State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

    2012-10-15

    In this work, the bulk moduli and band gaps of M{sub x}Zn{sub 1?x}O (M = Be, Mg, Ca, Cd) alloys in the whole composition range were quantitatively calculated by using the electronegativity-related models for bulk modulus and band gap, respectively. We found that the change trends of bulk modulus and band gap with an increase of M concentration x are same for Be{sub x}Zn{sub 1?x}O and Cd{sub x}Zn{sub 1?x}O, while the change trends are reverse for Mg{sub x}Zn{sub 1?x}O and Ca{sub x}Zn{sub 1?x}O. It was revealed that the bulk modulus is related to the valence electron density of atoms whereas the band gap is strongly influenced by the detailed chemical bonding behaviors of constituent atoms. The current work provides us a useful guide to compositionally design advanced alloy materials with both good mechanical and optoelectronic properties.

  7. Band-gap tailoring of ZnO by means of heavy Al doping

    SciTech Connect (OSTI)

    Sernelius, B.E.; Berggren, K.; Jin, Z.; Hamberg, I.; Granqvist, C.G.

    1988-06-15

    Films of ZnO:Al were produced by weakly reactive dual-target magnetron sputtering. Optical band gaps, evaluated from spectrophotometric data, were widened in proportion to the Al doping. The widening could be quantitatively reconciled with an effective-mass model for n-doped semiconductors, provided the polar character of ZnO was accounted for.

  8. Toroidal band limiter for a plasma containment device

    DOE Patents [OSTI]

    Kelley, George G.

    1978-01-01

    This invention relates to a toroidal plasma confinement device having poloidal and toroidal magnetic fields for confining a toroidal plasma column with a plasma current induced therein along an endless, circular equilibrium axis in a torus vacuum cavity wherein the improvement comprises the use of a toroidal plasma band limiter mounted within the vacuum cavity in such a manner as to ensure that the plasma energy is distributed more uniformly over the limiter surface thereby avoiding intense local heating of the limiter while at the same time substantially preventing damage to the plasma containment wall of the cavity by the energetic particles diffusing out from the confined plasma. A plurality of poloidal plasma ring limiters are also utilized for containment wall protection during any disruptive instability that might occur during operation of the device.

  9. Photonic band gap of a graphene-embedded quarter-wave stack

    SciTech Connect (OSTI)

    Fan, Yuancheng; Wei, Zeyong; Li, Hongqiang; Chen, Hong; Soukoulis, Costas M

    2013-12-10

    Here, we present a mechanism for tailoring the photonic band structure of a quarter-wave stack without changing its physical periods by embedding conductive sheets. Graphene is utilized and studied as a realistic, two-dimensional conductive sheet. In a graphene-embedded quarter-wave stack, the synergic actions of Bragg scattering and graphene conductance contributions open photonic gaps at the center of the reduced Brillouin zone that are nonexistent in conventional quarter-wave stacks. Such photonic gaps show giant, loss-independent density of optical states at the fixed lower-gap edges, of even-multiple characteristic frequency of the quarter-wave stack. The conductive sheet-induced photonic gaps provide a platform for the enhancement of light-matter interactions.

  10. Fabrication of Ceramic Layer-by-Layer Infrared Wavelength Photonic Band Gap Crystals

    SciTech Connect (OSTI)

    Henry Hao-Chuan Kang

    2004-12-19

    Photonic band gap (PBG) crystals, also known as photonic crystals, are periodic dielectric structures which form a photonic band gap that prohibit the propagation of electromagnetic (EM) waves of certain frequencies at any incident angles. Photonic crystals have several potential applications including zero-threshold semiconductor lasers, the inhibition of spontaneous emission, dielectric mirrors, and wavelength filters. If defect states are introduced in the crystals, light can be guided from one location to another or even a sharp bending of light in micron scale can be achieved. This generates the potential for optical waveguide and optical circuits, which will contribute to the improvement in the fiber-optic communications and the development of high-speed computers.

  11. Periodic dielectric structure for production of photonic band gap and method for fabricating the same

    DOE Patents [OSTI]

    Ozbay, Ekmel; Tuttle, Gary; Michel, Erick; Ho, Kai-Ming; Biswas, Rana; Chan, Che-Ting; Soukoulis, Costas

    1995-01-01

    A method for fabricating a periodic dielectric structure which exhibits a photonic band gap. Alignment holes are formed in a wafer of dielectric material having a given crystal orientation. A planar layer of elongate rods is then formed in a section of the wafer. The formation of the rods includes the step of selectively removing the dielectric material of the wafer between the rods. The formation of alignment holes and layers of elongate rods and wafers is then repeated to form a plurality of patterned wafers. A stack of patterned wafers is then formed by rotating each successive wafer with respect to the next-previous wafer, and then placing the successive wafer on the stack. This stacking results in a stack of patterned wafers having a four-layer periodicity exhibiting a photonic band gap.

  12. Band gap tuning in transition metal oxides by site-specific substitution

    DOE Patents [OSTI]

    Lee, Ho Nyung; Chisholm, Jr., Matthew F; Jellison, Jr., Gerald Earle; Singh, David J; Choi, Woo Seok

    2013-12-24

    A transition metal oxide insulator composition having a tuned band gap includes a transition metal oxide having a perovskite or a perovskite-like crystalline structure. The transition metal oxide includes at least one first element selected form the group of Bi, Ca, Ba, Sr, Li, Na, Mg, K, Pb, and Pr; and at least one second element selected from the group of Ti, Al, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Ru, Rh, Hf, Ta, W, Re, Os, Ir, and Pt. At least one correlated insulator is integrated into the crystalline structure, including REMO.sub.3, wherein RE is at least one Rare Earth element, and wherein M is at least one element selected from the group of Co, V, Cr, Ni, Mn, and Fe. The composition is characterized by a band gap of less of 4.5 eV.

  13. Periodic dielectric structure for production of photonic band gap and method for fabricating the same

    DOE Patents [OSTI]

    Ozbay, E.; Tuttle, G.; Michel, E.; Ho, K.M.; Biswas, R.; Chan, C.T.; Soukoulis, C.

    1995-04-11

    A method is disclosed for fabricating a periodic dielectric structure which exhibits a photonic band gap. Alignment holes are formed in a wafer of dielectric material having a given crystal orientation. A planar layer of elongate rods is then formed in a section of the wafer. The formation of the rods includes the step of selectively removing the dielectric material of the wafer between the rods. The formation of alignment holes and layers of elongate rods and wafers is then repeated to form a plurality of patterned wafers. A stack of patterned wafers is then formed by rotating each successive wafer with respect to the next-previous wafer, and then placing the successive wafer on the stack. This stacking results in a stack of patterned wafers having a four-layer periodicity exhibiting a photonic band gap. 42 figures.

  14. High efficiency thin-film multiple-gap photovoltaic device

    DOE Patents [OSTI]

    Dalal, Vikram L.

    1983-01-01

    A photovoltaic device includes at least two solar cells made from Group IV elements or their alloys in the amorphous state mounted on a substrate. The outermost or first cell has a larger bandgap than the second cell. Various techniques are utilized to improve the efficiency of the device.

  15. Photonic band gaps in three-dimensional network structures with short-range order

    SciTech Connect (OSTI)

    Liew, Seng Fatt; Noh, Heeso; Yang, Jin-Kyu; Schreck, Carl F.; Dufresne, Eric R.; O'Hern, Corey S.; Cao, Hui

    2011-12-15

    We present a systematic study of photonic band gaps (PBGs) in three-dimensional (3D) photonic amorphous structures (PASs) with short-range order. From calculations of the density of optical states (DOS) for PASs with different topologies, we find that tetrahedrally connected dielectric networks produce the largest isotropic PBGs. Local uniformity and tetrahedral order are essential to the formation of PBGs in PASs, in addition to short-range geometric order. This work demonstrates that it is possible to create broad, isotropic PBGs for vector light fields in 3D PASs without long-range order.

  16. Analysis of plasma-magnetic photonic crystal with a tunable band gap

    SciTech Connect (OSTI)

    Mehdian, H.; Mohammadzahery, Z.; Hasanbeigi, A. [Department of Physics and Plasma Research Institute of Tarbiat Moallem University, 49 Dr Mofatteh Avenue, Tehran 15614 (Iran, Islamic Republic of)

    2013-04-15

    In this paper, electromagnetic wave propagation through the one-dimensional plasma-magnetic photonic crystal in the presence of external magnetic field has been analyzed. The dispersion relation, transmission and reflection coefficients have been obtained by using the transfer matrix method. It is investigated how photonic band gap of photonic crystals will be tuned when both dielectric function {epsilon} and magnetic permeability {mu} of the constitutive materials, depend on applied magnetic field. This is shown by one dimensional photonic crystals consisting of plasma and ferrite material layers stacked alternately.

  17. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Gap-Opening Mechanism in a Triple-Band Metal Print A "wire" of indium only one or a few atoms wide grown on a silicon surface comprises an ideal test laboratory for studying one-dimensional (1D) metals. A new example comes from a collaboration between researchers from Yonsei University in Korea, the ALS, and the University of Oregon, who have discovered that the phase transition from metal to insulator that occurs at low temperature in indium wires on the silicon (111) surface

  18. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Gap-Opening Mechanism in a Triple-Band Metal Print A "wire" of indium only one or a few atoms wide grown on a silicon surface comprises an ideal test laboratory for studying one-dimensional (1D) metals. A new example comes from a collaboration between researchers from Yonsei University in Korea, the ALS, and the University of Oregon, who have discovered that the phase transition from metal to insulator that occurs at low temperature in indium wires on the silicon (111) surface

  19. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Gap-Opening Mechanism in a Triple-Band Metal Print A "wire" of indium only one or a few atoms wide grown on a silicon surface comprises an ideal test laboratory for studying one-dimensional (1D) metals. A new example comes from a collaboration between researchers from Yonsei University in Korea, the ALS, and the University of Oregon, who have discovered that the phase transition from metal to insulator that occurs at low temperature in indium wires on the silicon (111) surface

  20. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Gap-Opening Mechanism in a Triple-Band Metal Print A "wire" of indium only one or a few atoms wide grown on a silicon surface comprises an ideal test laboratory for studying one-dimensional (1D) metals. A new example comes from a collaboration between researchers from Yonsei University in Korea, the ALS, and the University of Oregon, who have discovered that the phase transition from metal to insulator that occurs at low temperature in indium wires on the silicon (111) surface

  1. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Gap-Opening Mechanism in a Triple-Band Metal Print A "wire" of indium only one or a few atoms wide grown on a silicon surface comprises an ideal test laboratory for studying one-dimensional (1D) metals. A new example comes from a collaboration between researchers from Yonsei University in Korea, the ALS, and the University of Oregon, who have discovered that the phase transition from metal to insulator that occurs at low temperature in indium wires on the silicon (111) surface

  2. Nonlinear optical response of semiconductor-nanocrystals-embedded photonic band gap structure

    SciTech Connect (OSTI)

    Liao, Chen; Zhang, Huichao; Tang, Luping; Zhou, Zhiqiang; Lv, Changgui; Cui, Yiping; Zhang, Jiayu

    2014-04-28

    Colloidal CdSe/ZnS core/shell nanocrystals (NCs), which were dispersed in SiO{sub 2} sol, were utilized to fabricate a SiO{sub 2}:NCs/TiO{sub 2} all-dielectric photonic band gap (PBG) structure. The third-order nonlinear refractive index (n{sub 2}) of the PBG structure was nearly triple of that of the SiO{sub 2}:NCs film due to the local field enhancement in the PBG structure. The photoinduced change in refractive index (Δn) could shift the PBG band edge, so the PBG structure would show significant transmission modification, whose transmission change was ∼17 folds of that of the SiO{sub 2}:NCs film. Under excitation of a 30 GW/cm{sup 2} femtosecond laser beam, a transmission decrease of 80% was realized.

  3. Electro-optic device with gap-coupled electrode

    DOE Patents [OSTI]

    Deri, Robert J.; Rhodes, Mark A.; Bayramian, Andrew J.; Caird, John A.; Henesian, Mark A.; Ebbers, Christopher A.

    2013-08-20

    An electro-optic device includes an electro-optic crystal having a predetermined thickness, a first face and a second face. The electro-optic device also includes a first electrode substrate disposed opposing the first face. The first electrode substrate includes a first substrate material having a first thickness and a first electrode coating coupled to the first substrate material. The electro-optic device further includes a second electrode substrate disposed opposing the second face. The second electrode substrate includes a second substrate material having a second thickness and a second electrode coating coupled to the second substrate material. The electro-optic device additionally includes a voltage source electrically coupled to the first electrode coating and the second electrode coating.

  4. Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

    SciTech Connect (OSTI)

    Zhu, Y.; Jain, N.; Hudait, M. K.; Mohata, D. K.; Datta, S.; Lubyshev, D.; Fastenau, J. M.; Liu, A. K.

    2013-01-14

    The experimental study of the valence band offset ({Delta}E{sub v}) of a mixed As/Sb type-II staggered gap GaAs{sub 0.35}Sb{sub 0.65}/In{sub 0.7}Ga{sub 0.3}As heterostructure used as source/channel junction of n-channel tunnel field effect transistor (TFET) grown by molecular beam epitaxy was investigated by x-ray photoelectron spectroscopy (XPS). Cross-sectional transmission electron micrograph shows high crystalline quality at the source/channel heterointerface. XPS results demonstrate a {Delta}E{sub v} of 0.39 {+-} 0.05 eV at the GaAs{sub 0.35}Sb{sub 0.65}/In{sub 0.7}Ga{sub 0.3}As heterointerface. The conduction band offset was calculated to be {approx}0.49 eV using the band gap values of source and channel materials and the measured valence band offset. An effective tunneling barrier height of 0.21 eV was extracted, suggesting a great promise for designing a metamorphic mixed As/Sb type-II staggered gap TFET device structure for low-power logic applications.

  5. First-principles study of direct and narrow band gap semiconducting β -CuGaO2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Nguyen, Manh Cuong; Zhao, Xin; Wang, Cai-Zhuang; Ho, Kai-Ming

    2015-04-16

    Semiconducting oxides have attracted much attention due to their great stability in air or water and the abundance of oxygen. Recent success in synthesizing a metastable phase of CuGaO2 with direct narrow band gap opens up new applications of semiconducting oxides as absorber layer for photovoltaics. Using first-principles density functional theory calculations, we investigate the thermodynamic and mechanical stabilities as well as the structural and electronic properties of the β-CuGaO2 phase. Our calculations show that the β-CuGaO2 structure is dynamically and mechanically stable. The energy band gap is confirmed to be direct at the Γ point of Brillouin zone. Inmore » conclusion, the optical absorption occurs right at the band gap edge and the density of states near the valance band maximum is large, inducing an intense absorption of light as observed in experiment.« less

  6. Photonic-band-gap effects in two-dimensional polycrystalline and amorphous structures

    SciTech Connect (OSTI)

    Yang, Jin-Kyu; Noh, Heeso; Liew, Seng-Fatt; Schreck, Carl; Guy, Mikhael I.; O'Hern, Corey S.; Cao, Hui

    2010-11-15

    We study numerically the density of optical states (DOS) in two-dimensional photonic structures with short-range positional order and observe a transition from polycrystalline to amorphous photonic systems. In polycrystals, photonic band gaps (PBGs) are formed within individual domains, which leads to a depletion of the DOS similar to that in periodic structures. In amorphous photonic media, the domain sizes are too small to form PBGs, thus the depletion of the DOS is weakened significantly. The critical domain size that separates the polycrystalline and amorphous regimes is determined by the attenuation length of Bragg scattering, which depends not only on the degree of positional order but also the refractive-index contrast of the photonic material. Even with relatively low-refractive-index contrast, we find that modest short-range positional order in photonic structures enhances light confinement via collective scattering and interference.

  7. Band gap narrowing in zinc oxide-based semiconductor thin films

    SciTech Connect (OSTI)

    Kumar, Jitendra E-mail: akrsri@gmail.com; Kumar Srivastava, Amit E-mail: akrsri@gmail.com

    2014-04-07

    A simple expression is proposed for the band gap narrowing (or shrinkage) in semiconductors using optical absorption measurements of spin coated 1 at. % Ga-doped ZnO (with additional 0–1.5 at. % zinc species) thin films as ΔE{sub BGN} = Bn{sup 1/3} [1 − (n{sub c}/n){sup 1/3}], where B is the fitting parameter, n is carrier concentration, and n{sub c} is the critical density required for shrinkage onset. Its uniqueness lies in not only describing variation of ΔE{sub BGN} correctly but also allowing deduction of n{sub c} automatically for several M-doped ZnO (M: Ga, Al, In, B, Mo) systems. The physical significance of the term [1 − (n{sub c}/n){sup 1/3}] is discussed in terms of carrier separation.

  8. A versatile optical junction using photonic band-gap guidance and self collimation

    SciTech Connect (OSTI)

    Gupta, Man Mohan; Medhekar, Sarang

    2014-09-29

    We show that it is possible to design two photonic crystal (PC) structures such that an optical beam of desired wavelength gets guided within the line defect of the first structure (photonic band gap guidance) and the same beam gets guided in the second structure by self-collimation. Using two dimensional simulation of a design made of the combination of these two structures, we propose an optical junction that allows for crossing of two optical signals of same wavelength and same polarization with very low crosstalk. Moreover, the junction can be operated at number of frequencies in a wide range. Crossing of multiple beams with very low cross talk is also possible. The proposed junction should be important in future integrated photonic circuits.

  9. Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements

    DOE Patents [OSTI]

    Guha, Subhendu; Ovshinsky, Stanford R.

    1990-02-02

    A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.

  10. Method for implantation of high dopant concentrations in wide band gap materials

    DOE Patents [OSTI]

    Usov, Igor; Arendt, Paul N.

    2009-09-15

    A method that combines alternate low/medium ion dose implantation with rapid thermal annealing at relatively low temperatures. At least one dopant is implanted in one of a single crystal and an epitaxial film of the wide band gap compound by a plurality of implantation cycles. The number of implantation cycles is sufficient to implant a predetermined concentration of the dopant in one of the single crystal and the epitaxial film. Each of the implantation cycles includes the steps of: implanting a portion of the predetermined concentration of the one dopant in one of the single crystal and the epitaxial film; annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time to repair damage to one of the single crystal and the epitaxial film caused by implantation and activates the implanted dopant; and cooling the annealed single crystal and implanted portion to a temperature of less than about 100.degree. C. This combination produces high concentrations of dopants, while minimizing the defect concentration.

  11. Geometric phase and entanglement of Raman photon pairs in the presence of photonic band gap

    SciTech Connect (OSTI)

    Berrada, K.; Ooi, C. H. Raymond; Abdel-Khalek, S.

    2015-03-28

    Robustness of the geometric phase (GP) with respect to different noise effects is a basic condition for an effective quantum computation. Here, we propose a useful quantum system with real physical parameters by studying the GP of a pair of Stokes and anti-Stokes photons, involving Raman emission processes with and without photonic band gap (PBG) effect. We show that the properties of GP are very sensitive to the change of the Rabi frequency and time, exhibiting collapse phenomenon as the time becomes significantly large. The system allows us to obtain a state which remains with zero GP for longer times. This result plays a significant role to enhance the stabilization and control of the system dynamics. Finally, we investigate the nonlocal correlation (entanglement) between the pair photons by taking into account the effect of different parameters. An interesting correlation between the GP and entanglement is observed showing that the PBG stabilizes the fluctuations in the system and makes the entanglement more robust against the change of time and frequency.

  12. Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

    SciTech Connect (OSTI)

    Zhu, Y.; Jain, N.; Hudait, M. K.; Mohata, D. K.; Datta, S.; Lubyshev, D.; Fastenau, J. M.; Liu, A. K.

    2012-09-10

    The structural properties and band offset determination of p-channel staggered gap In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} heterostructure tunnel field-effect transistor (TFET) grown by molecular beam epitaxy (MBE) were investigated. High resolution x-ray diffraction revealed that the active layers are strained with respect to 'virtual substrate.' Dynamic secondary ion mass spectrometry confirmed an abrupt junction profile at the In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} heterointerface and minimal level of intermixing between As and Sb atoms. The valence band offset of 0.37 {+-} 0.05 eV was extracted from x-ray photoelectron spectroscopy. A staggered band lineup was confirmed at the heterointerface with an effective tunneling barrier height of 0.13 eV. Thus, MBE-grown staggered gap In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} TFET structures are a promising p-channel option to provide critical guidance for the future design of mixed As/Sb type-II based complementary logic and low power devices.

  13. Band gap narrowing in zinc oxide-based semiconductor thin films...

    Office of Scientific and Technical Information (OSTI)

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  14. Analysis of photonic band gaps in two-dimensional photonic crystals with rods covered by a thin interfacial layer

    SciTech Connect (OSTI)

    Trifonov, T.; Marsal, L.F.; Pallares, J.; Rodriguez, A.; Alcubilla, R.

    2004-11-15

    We investigate different aspects of the absolute photonic band gap (PBG) formation in two-dimensional photonic structures consisting of rods covered with a thin dielectric film. Specifically, triangular and honeycomb lattices in both complementary arrangements, i.e., air rods drilled in silicon matrix and silicon rods in air, are studied. We consider that the rods are formed of a dielectric core (silicon or air) surrounded by a cladding layer of silicon dioxide (SiO{sub 2}), silicon nitride (Si{sub 3}N{sub 4}), or germanium (Ge). Such photonic lattices present absolute photonic band gaps, and we study the evolution of these gaps as functions of the cladding material and thickness. Our results show that in the case of air rods in dielectric media the existence of dielectric cladding reduces the absolute gap width and may cause complete closure of the gap if thick layers are considered. For the case of dielectric rods in air, however, the existence of a cladding layer can be advantageous and larger absolute PBG's can be achieved.

  15. Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing

    SciTech Connect (OSTI)

    Nie, D.; Mei, T.; Xu, C. D.; Dong, J. R.

    2006-09-25

    Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600 deg. C for 30 s. The annealing results in a maximum differential band-gap blueshift of 106 nm but a thermal shift of only 10 nm. Band-gap halftones are obtained by controlling the amount of near-surface defects via wet chemical etching on the plasma-exposed InP cap layer. No degradation of quantum-dot crystal quality due to the process has been observed as evidenced by photoluminescence intensity.

  16. The change in dielectric constant, AC conductivity and optical band gaps of polymer electrolyte film: Gamma irradiation

    SciTech Connect (OSTI)

    Raghu, S. Subramanya, K. Sharanappa, C. Mini, V. Archana, K. Sanjeev, Ganesh Devendrappa, H.

    2014-04-24

    The effects of gamma (γ) irradiation on dielectric and optical properties of polymer electrolyte film were investigated. The dielectric constant and ac conductivity increases with γ dose. Also optical band gap decreased from 4.23 to 3.78ev after irradiation. A large dependence of the polymer properties on the irradiation dose was noticed. This suggests that there is a possibility of improving polymer electrolyte properties on gamma irradiation.

  17. Electronic Structures, Bonding Configurations, and Band-Gap-Opening Properties of Graphene Binding with Low-Concentration Fluorine

    SciTech Connect (OSTI)

    Duan, Yuhua; Stinespring, Charter D.; Chorpening, Benjamin

    2015-06-18

    To better understand the effects of low-level fluorine in graphene-based sensors, first-principles density functional theory (DFT) with van der Waals dispersion interactions has been employed to investigate the structure and impact of fluorine defects on the electrical properties of single-layer graphene films. The results show that both graphite-2H and graphene have zero band gaps. When fluorine bonds to a carbon atom, the carbon atom is pulled slightly above the graphene plane, creating what is referred to as a CF defect. The lowest-binding energy state is found to correspond to two CF defects on nearest neighbor sites, with one fluorine above the carbon plane and the other below the plane. Overall this has the effect of buckling the graphene. The results further show that the addition of fluorine to graphene leads to the formation of an energy band (BF) near the Fermi level, contributed mainly from the 2p orbitals of fluorine with a small contribution from the porbitals of the carbon. Among the 11 binding configurations studied, our results show that only in two cases does the BF serve as a conduction band and open a band gap of 0.37 eV and 0.24 eV respectively. The binding energy decreases with decreasing fluorine concentration due to the interaction between neighboring fluorine atoms. The obtained results are useful for sensor development and nanoelectronics.

  18. Electronic Structures, Bonding Configurations, and Band-Gap-Opening Properties of Graphene Binding with Low-Concentration Fluorine

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Duan, Yuhua; Stinespring, Charter D.; Chorpening, Benjamin

    2015-06-18

    To better understand the effects of low-level fluorine in graphene-based sensors, first-principles density functional theory (DFT) with van der Waals dispersion interactions has been employed to investigate the structure and impact of fluorine defects on the electrical properties of single-layer graphene films. The results show that both graphite-2H and graphene have zero band gaps. When fluorine bonds to a carbon atom, the carbon atom is pulled slightly above the graphene plane, creating what is referred to as a CF defect. The lowest-binding energy state is found to correspond to two CF defects on nearest neighbor sites, with one fluorine abovemore » the carbon plane and the other below the plane. Overall this has the effect of buckling the graphene. The results further show that the addition of fluorine to graphene leads to the formation of an energy band (BF) near the Fermi level, contributed mainly from the 2p orbitals of fluorine with a small contribution from the porbitals of the carbon. Among the 11 binding configurations studied, our results show that only in two cases does the BF serve as a conduction band and open a band gap of 0.37 eV and 0.24 eV respectively. The binding energy decreases with decreasing fluorine concentration due to the interaction between neighboring fluorine atoms. The obtained results are useful for sensor development and nanoelectronics.« less

  19. Direct band gaps in multiferroic h-LuFeO{sub 3}

    SciTech Connect (OSTI)

    Holinsworth, B. S.; Mazumdar, D.; Musfeldt, J. L.; Brooks, C. M.; Mundy, J. A.; Das, H.; Fennie, C. J.; Cherian, J. G.; McGill, S. A.; Schlom, D. G.

    2015-02-23

    We measured the optical properties of epitaxial thin films of the metastable hexagonal polymorph of LuFeO{sub 3} by absorption spectroscopy, magnetic circular dichroism, and photoconductivity. Comparison with complementary electronic structure calculations reveals a 1.1 eV direct gap involving hybridized Fe 3d{sub z{sup 2}}+O 2p{sub z}→Fe d excitations at the Γ and A points, with a higher energy direct gap at 2.0 eV. Both charge gaps nicely overlap the solar spectrum.

  20. Nonlinear sub-cyclotron resonance as a formation mechanism for gaps in banded chorus

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Fu, Xiangrong; Guo, Zehua; Dong, Chuanfei; Gary, S. Peter

    2015-05-14

    An interesting characteristic of magnetospheric chorus is the presence of a frequency gap at ω ≃ 0.5Ωe, where Ωe is the electron cyclotron angular frequency. Recent chorus observations sometimes show additional gaps near 0.3Ωe and 0.6Ωe. Here we present a novel nonlinear mechanism for the formation of these gaps using Hamiltonian theory and test particle simulations in a homogeneous, magnetized, collisionless plasma. We find that an oblique whistler wave with frequency at a fraction of the electron cyclotron frequency can resonate with electrons, leading to effective energy exchange between the wave and particles.

  1. Nonlinear sub-cyclotron resonance as a formation mechanism for gaps in banded chorus

    SciTech Connect (OSTI)

    Fu, Xiangrong; Guo, Zehua; Dong, Chuanfei; Gary, S. Peter

    2015-05-14

    An interesting characteristic of magnetospheric chorus is the presence of a frequency gap at ? ? 0.5?e, where ?e is the electron cyclotron angular frequency. Recent chorus observations sometimes show additional gaps near 0.3?e and 0.6?e. Here we present a novel nonlinear mechanism for the formation of these gaps using Hamiltonian theory and test particle simulations in a homogeneous, magnetized, collisionless plasma. We find that an oblique whistler wave with frequency at a fraction of the electron cyclotron frequency can resonate with electrons, leading to effective energy exchange between the wave and particles.

  2. Near-edge band structures and band gaps of Cu-based semiconductors predicted by the modified Becke-Johnson potential plus an on-site Coulomb U

    SciTech Connect (OSTI)

    Zhang, Yubo; Zhang, Jiawei; Wang, Youwei; Gao, Weiwei; Abtew, Tesfaye A.; Zhang, Peihong E-mail: wqzhang@mail.sic.ac.cn; Beijing Computational Science Research Center, Beijing 100084 ; Zhang, Wenqing E-mail: wqzhang@mail.sic.ac.cn; School of Chemistry and Chemical Engineering and Sate Key Laboratory of Coordination Chemistry, Nanjing University, Jiangsu 210093

    2013-11-14

    Diamond-like Cu-based multinary semiconductors are a rich family of materials that hold promise in a wide range of applications. Unfortunately, accurate theoretical understanding of the electronic properties of these materials is hindered by the involvement of Cu d electrons. Density functional theory (DFT) based calculations using the local density approximation or generalized gradient approximation often give qualitative wrong electronic properties of these materials, especially for narrow-gap systems. The modified Becke-Johnson (mBJ) method has been shown to be a promising alternative to more elaborate theory such as the GW approximation for fast materials screening and predictions. However, straightforward applications of the mBJ method to these materials still encounter significant difficulties because of the insufficient treatment of the localized d electrons. We show that combining the promise of mBJ potential and the spirit of the well-established DFT + U method leads to a much improved description of the electronic structures, including the most challenging narrow-gap systems. A survey of the band gaps of about 20 Cu-based semiconductors calculated using the mBJ + U method shows that the results agree with reliable values to within 0.2 eV.

  3. Novel wide band gap materials for highly efficient thin film tandem solar cells

    SciTech Connect (OSTI)

    Brian E. Hardin, Stephen T. Connor, Craig H. Peters

    2012-06-11

    Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PVâ??s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

  4. Band gap estimation from temperature dependent Seebeck measurementDeviations from the 2e|S|{sub max}T{sub max} relation

    SciTech Connect (OSTI)

    Gibbs, Zachary M.; Kim, Hyun-Sik; Wang, Heng; Snyder, G. Jeffrey

    2015-01-12

    In characterizing thermoelectric materials, electrical and thermal transport measurements are often used to estimate electronic band structure properties such as the effective mass and band gap. The Goldsmid-Sharp band gap, E{sub g}?=?2e|S|{sub max}T{sub max}, is a tool widely employed to estimate the band gap from temperature dependent Seebeck coefficient measurements. However, significant deviations of more than a factor of two are now known to occur. We find that this is when either the majority-to-minority weighted mobility ratio (A) becomes very different from 1.0 or as the band gap (E{sub g}) becomes significantly smaller than 10 k{sub B}T. For narrow gaps (E{sub g}???6 k{sub B}T), the Maxwell-Boltzmann statistics applied by Goldsmid-Sharp break down and Fermi-Dirac statistics are required. We generate a chart that can be used to quickly estimate the expected correction to the Goldsmid-Sharp band gap depending on A and S{sub max}; however, additional errors can occur for S?

  5. Wide band gap p-type nanocrystalline CuBO{sub 2} as a novel UV photocatalyst

    SciTech Connect (OSTI)

    Santra, S.; Das, N.S.; Chattopadhyay, K.K.

    2013-07-15

    Graphical abstract: - Highlights: CuBO{sub 2} nanocrystals were synthesized by solgel route. The products have been characterized to confirm the formation of CuBO{sub 2}. Photocatalytic activity of this material is reported for the first time. - Abstract: Wide band gap copper based delafossite CuBO{sub 2} nanocrystalline powders of different particle sizes were synthesized via solgel route. Structural characterization was performed using X-ray diffraction (XRD) and transmission electron microscopy (TEM) which confirmed good crystallinity and proper phase formation of the samples. Compositional analysis was carried out by energy dispersive X-ray studies (EDX), whereas field emission scanning electron microscopy revealed morphological information of the samples. The photocatalytic performance of this delafossite material was studied for the first time with a standard photocatalytic set-up and the photocatalytic efficiency was found to increase with decreasing particle size. The LangmuirHinshelwood photocatalytic rate constants increased considerably for the samples synthesized at different pH from 2.75 to 0.5; which eventually varied particle size. The efficient photocatalytic performance, found for the first time here, will make this novel p-type wide band gap semiconductor a truly multifunctional material.

  6. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

    SciTech Connect (OSTI)

    Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng

    2014-11-17

    We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450?C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18??m long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

  7. First-principles study of band gap engineering via oxygen vacancy doping in perovskite ABB'O₃ solid solutions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qi, Tingting; Curnan, Matthew T.; Kim, Seungchul; Bennett, Joseph W.; Grinberg, Ilya; Rappe, Andrew M.

    2011-12-15

    Oxygen vacancies in perovskite oxide solid solutions are fundamentally interesting and technologically important. However, experimental characterization of the vacancy locations and their impact on electronic structure is challenging. We have carried out first-principles calculations on two Zr-modified solid solutions, Pb(Zn1/3Nb2/3)O₃ and Pb(Mg1/3Nb2/3)O₃, in which vacancies are present. We find that the vacancies are more likely to reside between low-valent cation-cation pairs than high-valent cation-cation pairs. Based on the analysis of our results, we formulate guidelines that can be used to predict the location of oxygen vacancies in perovskite solid solutions. Our results show that vacancies can have a significant impactmore » on both the conduction and valence band energies, in some cases lowering the band gap by ≈0.5 eV. The effects of vacancies on the electronic band structure can be understood within the framework of crystal field theory.« less

  8. Conductivity and optical band gaps of polyethylene oxide doped with Li{sub 2}SO{sub 4} salt

    SciTech Connect (OSTI)

    Chapi, Sharanappa Raghu, S. Subramanya, K. Archana, K. Mini, V. Devendrappa, H.

    2014-04-24

    The conductivity and optical properties of Li{sub 2}SO{sub 4} doped polyethylene oxide (PEO) films were studied. The polymer electrolyte films are prepared using solution casting technique. The material phase change was confirmed by X-ray diffraction (XRD) technique. Optical absorption study was conducted using UV- Vis. Spectroscopy in the wavelength range 190–1100nm on pure and doped PEO films. The direct and indirect optical band gaps were found decreased from 5.81–4.51eV and 4.84–3.43eV respectively with increasing the Li{sub 2}SO{sub 4}. The conductivity found to increases with increasing the dopant concentration due to strong hopping mechanism at room temperature.

  9. Physics of band-gap formation and its evolution in the pillar-based phononic crystal structures

    SciTech Connect (OSTI)

    Pourabolghasem, Reza; Mohammadi, Saeed; Eftekhar, Ali Asghar; Adibi, Ali; Khelif, Abdelkrim

    2014-07-07

    In this paper, the interplay of Bragg scattering and local resonance is theoretically studied in a phononic crystal (PnC) structure composed of a silicon membrane with periodic tungsten pillars. The comparison of phononic band gaps (PnBGs) in three different lattice types (i.e., square, triangular, and honeycomb) with different pillar geometries shows that different PnBGs have varying degrees of dependency on the lattice symmetry based on the interplay of the local resonances and the Bragg effect. The details of this interplay is discussed. The significance of locally resonating pillars, specially in the case of tall pillars, on PnBGs is discussed and verified by examining the PnBG position and width in perturbed lattices via Monte Carlo simulations. It is shown that the PnBGs caused by the local resonance of the pillars are more resilient to the lattice perturbations than those caused by Bragg scattering.

  10. Band-gap nonlinear optical generation: The structure of internal optical field and the structural light focusing

    SciTech Connect (OSTI)

    Zaytsev, Kirill I. Katyba, Gleb M.; Yakovlev, Egor V.; Yurchenko, Stanislav O.; Gorelik, Vladimir S.

    2014-06-07

    A novel approach for the enhancement of nonlinear optical effects inside globular photonic crystals (PCs) is proposed and systematically studied via numerical simulations. The enhanced optical harmonic generation is associated with two- and three-dimensional PC pumping with the wavelength corresponding to different PC band-gaps. The interactions between light and the PC are numerically simulated using the finite-difference time-domain technique for solving the Maxwell's equations. Both empty and infiltrated two-dimensional PC structures are considered. A significant enhancement of harmonic generation is predicted owing to the highly efficient PC pumping based on the structural light focusing effect inside the PC structure. It is shown that a highly efficient harmonic generation could be attained for both the empty and infiltrated two- and three-dimensional PCs. We are demonstrating the ability for two times enhancement of the parametric decay efficiency, one order enhancement of the second harmonic generation, and two order enhancement of the third harmonic generation in PC structures in comparison to the nonlinear generations in appropriate homogenous media. Obviously, the nonlinear processes should be allowed by the molecular symmetry. The criteria of the nonlinear process efficiency are specified and calculated as a function of pumping wavelength position towards the PC globule diameter. Obtained criterion curves exhibit oscillating characteristics, which indicates that the highly efficient generation corresponds to the various PC band-gap pumping. The highest efficiency of nonlinear conversions could be reached for PC pumping with femtosecond optical pulses; thus, the local peak intensity would be maximized. Possible applications of the observed phenomenon are also discussed.

  11. Significant Reduction in NiO Band Gap upon Formation of LixNi1?xO Alloys: Applications to Solar Energy Conversion

    SciTech Connect (OSTI)

    Alidoust, Nima; Toroker, Maytal; Keith, John A.; Carter, Emily A.

    2014-01-01

    Long-term sustainable solar energy conversion relies on identifying economical and versatile semiconductor materials with appropriate band structures for photovoltaic and photocatalytic applications (e.g., band gaps of ?1.52.0 eV). Nickel oxide (NiO) is an inexpensive yet highly promising candidate. Its charge-transfer character may lead to longer carrier lifetimes needed for higher efficiencies, and its conduction band edge is suitable for driving hydrogen evolution via water-splitting. However, NiOs large band gap (?4 eV) severely limits its use in practical applications. Our first-principles quantum mechanics calculations show band gaps dramatically decrease to ?2.0 eV when NiO is alloyed with Li2O. We show that LixNi1?xO alloys (with x=0.125 and 0.25) are p-type semiconductors, contain states with no impurity levels in the gap and maintain NiOs desirable charge-transfer character. Lastly, we show that the alloys have potential for photoelectrochemical applications, with band edges well-placed for photocatalytic hydrogen production and CO2 reduction, as well as in tandem dye-sensitized solar cells as a photocathode.

  12. Optical absorption and band gap reduction in (Fe1-xCrx)2O3 solid solutions: A first-principles study

    SciTech Connect (OSTI)

    Wang, Yong; Lopata, Kenneth A.; Chambers, Scott A.; Govind, Niranjan; Sushko, Petr V.

    2013-12-02

    We provide a detailed theoretical analysis of the character of optical transitions and band gap reduction in (Fe1-xCrx)2O3 solid solutions using extensive periodic model and embedded cluster calculations. Optical absorption bands for x = 0.0, 0.5, and 1.0 are assigned on the basis of timedependent density functional theory (TDDFT) calculations. A band-gap reduction of as much as 0.7 eV with respect to that of pure ?-Fe2O3 is found. This result can be attributed to predominantly two effects: (i) the higher valence band edge for x ? 0.5, as compared to those in pure ?-Fe2O3 and ?-Cr2O3, and, (ii) the appearance of Cr ? Fe dd transitions in the solid solutions. Broadening of the valence band due to hybridization of the O 2p states with Fe and Cr 3d states also contributes to band gap reduction.

  13. Toward Photochemical Water Splitting Using Band-Gap-Narrowed Semiconductors and Transition-Metal Based Molecular Catalysts

    SciTech Connect (OSTI)

    Muckerman,J.T.; Rodriguez, J.A.; Fujita, E.

    2009-06-07

    We are carrying out coordinated theoretical and experimental studies of toward photochemical water splitting using band-gap-narrowed semiconductors (BGNSCs) with attached multi-electron molecular water oxidation and hydrogen production catalysts. We focus on the coupling between the materials properties and the H{sub 2}O redox chemistry, with an emphasis on attaining a fundamental understanding of the individual elementary steps in the following four processes: (1) Light-harvesting and charge-separation of stable oxide or oxide-derived semiconductors for solar-driven water splitting, including the discovery and characterization of the behavior of such materials at the aqueous interface; (2) The catalysis of the four-electron water oxidation by dinuclear hydroxo transition-metal complexes with quinonoid ligands, and the rational search for improved catalysts; (3) Transfer of the design principles learned from the elucidation of the DuBois-type hydrogenase model catalysts in acetonitrile to the rational design of two-electron hydrogen production catalysts for aqueous solution; (4) Combining these three elements to examine the function of oxidation catalysts on BGNSC photoanode surfaces and hydrogen production catalysts on cathode surfaces at the aqueous interface to understand the challenges to the efficient coupling of the materials functions.

  14. Empirical determination of the energy band gap narrowing in p{sup +} silicon heavily doped with boron

    SciTech Connect (OSTI)

    Yan, Di Cuevas, Andres

    2014-11-21

    In the analysis of highly doped silicon, energy band gap narrowing (BGN) and degeneracy effects may be accounted for separately, as a net BGN in conjunction with Fermi-Dirac statistics, or lumped together in an apparent BGN used with Boltzmann statistics. This paper presents an experimental study of silicon highly doped with boron, with the aim of evaluating the applicability of previously reported BGN models. Different boron diffusions covering a broad range of dopant densities were prepared, and their characteristic recombination current parameters J{sub 0} were measured using a contactless photoconductance technique. The BGN was subsequently extracted by matching theoretical simulations of carrier transport and recombination in each of the boron diffused regions and the measured J{sub 0} values. An evaluation of two different minority carrier mobility models indicates that their impact on the extraction of the BGN is relatively small. After considering possible uncertainties, it can be concluded that the BGN is slightly larger in p{sup +} silicon than in n{sup +} silicon, in qualitative agreement with theoretical predictions by Schenk. Nevertheless, in quantitative terms that theoretical model is found to slightly underestimate the BGN in p{sup +} silicon. With the two different parameterizations derived in this paper for the BGN in p{sup +} silicon, both statistical approaches, Boltzmann and Fermi-Dirac, provide a good agreement with the experimental data.

  15. Structure and band gap determination of irradiation-induced amorphous nano-channels in LiNbO{sub 3}

    SciTech Connect (OSTI)

    Sachan, R. Pakarinen, O. H.; Chisholm, M. F.; Liu, P.; Patel, M. K.; Zhang, Y.; Wang, X. L.; Weber, W. J.

    2015-04-07

    The irradiation of lithium niobate with swift heavy ions results in the creation of amorphous nano-sized channels along the incident ion path. These nano-channels are on the order of a hundred microns in length and could be useful for photonic applications. However, there are two major challenges in these nano-channels characterization: (i) it is difficult to investigate the structural characteristics of these nano-channels due to their very long length and (ii) the analytical electron microscopic analysis of individual ion track is complicated due to electron beam sensitive nature of lithium niobate. Here, we report the first high resolution microscopic characterization of these amorphous nano-channels, widely known as ion-tracks, by direct imaging them at different depths in the material, and subsequently correlating the key characteristics with electronic energy loss of ions. Energetic Kr ions ({sup 84}Kr{sup 22} with 1.98?GeV energy) are used to irradiate single crystal lithium niobate with a fluence of 2 10{sup 10} ions/cm{sup 2}, which results in the formation of individual ion tracks with a penetration depth of ?180??m. Along the ion path, electron energy loss of the ions, which is responsible for creating the ion tracks, increases with depth under these conditions in LiNbO{sub 3}, resulting in increases in track diameter of a factor of ?2 with depth. This diameter increase with electronic energy loss is consistent with predictions of the inelastic thermal spike model. We also show a new method to measure the band gap in individual ion track by using electron energy-loss spectroscopy.

  16. Experimental and theoretical studies of band gap alignment in GaAs{sub 1?x}Bi{sub x}/GaAs quantum wells

    SciTech Connect (OSTI)

    Kudrawiec, R. Kopaczek, J.; Polak, M. P.; Scharoch, P.; Gladysiewicz, M.; Misiewicz, J.; Richards, R. D.; Bastiman, F.; David, J. P. R.

    2014-12-21

    Band gap alignment in GaAs{sub 1?x}Bi{sub x}/GaAs quantum wells (QWs) was studied experimentally by photoreflectance (PR) and theoretically, ab initio, within the density functional theory in which the supercell based calculations are combined with the alchemical mixing approximation applied to a single atom in a supercell. In PR spectra, the optical transitions related to the excited states in the QW (i.e., the transition between the second heavy-hole and the second electron subband) were clearly observed in addition to the ground state QW transition and the GaAs barrier transition. This observation is clear experimental evidence that this is a type I QW with a deep quantum confinement in the conduction and valence bands. From the comparison of PR data with calculations of optical transitions in GaAs{sub 1?x}Bi{sub x}/GaAs QW performed for various band gap alignments, the best agreement between experimental data and theoretical calculations has been found for the valence band offset of 52??5%. A very similar valence band offset was obtained from ab initio calculations. These calculations show that the incorporation of Bi atoms into GaAs host modifies both the conduction and the valence band. For GaAs{sub 1?x}Bi{sub x} with 0?band shifts lineary at a rate of ?33?meV per % Bi, which only slightly decreases with Bi concentration. Whereas the valance band shift is clearly non-linear. Reducing initially at a rate of ?51?meV per % Bi for low concentrations of Bi and then at a significantly reduced rate of ?20?meV per % Bi near the end of the studied composition range. The overall reduction rate of the band gap is parabolic and the reduction rates change from ?84 to ?53?meV per % Bi for lower and higher Bi concentrations, respectively. The calculated shifts of valence and conduction bands give the variation of valence (conduction) band offset between GaAs{sub 1?x}Bi{sub x} and GaAs in the range of ?60%40% (?40%60%), which is in good agreement with our conclusion derived from PR measurements.

  17. Control of morphology and function of low band gap polymer bis-fullerene mixed heterojunctions in organic photovoltaics with selective solvent vapor annealing.

    SciTech Connect (OSTI)

    Chen, Huipeng; Hsiao, Yu-Che; Dadmun, Mark D

    2014-01-01

    Replacing PCBM with a bis-adduct fullerene (i.e. ICBA) has been reported to significantly improve the open circuit voltage (VOC) and power conversion efficiency (PCE) in P3HT bulk heterojunctions. However, for the most promising low band-gap polymer (LBP) systems, replacing PCBM with ICBA results in very poor shortcircuit current (JSC) and PCE although the VOC is significantly improved. Therefore, in this work, we have completed small angle neutron scattering and neutron reflectometry experiments to study the impact of post-deposition solvent annealing (SA) with control of solvent quality on the morphology and performance of LBP bis-fullerene BHJ photovoltaics. The results show that SA in a solvent that is selective for the LBP results in a depletion of bis-fullerene near the air surface, which limits device performance. SA in a solvent vapor which has similar solubility for polymer and bis-fullerene results in a higher degree of polymer ordering, bis-fullerene phase separation, and segregation of the bis-fullerene to the air surface, which facilitates charge transport and increases power conversion efficiency (PCE) by 100%. The highest degree of polymer ordering combined with significant bis-fullerene phase separation and segregation of bis-fullerene to the air surface is obtained by SA in a solvent vapor that is selective for the bis-fullerene. The resultant morphology increases PCE by 190%. These results indicate that solvent annealing with judicious solvent choice provides a unique tool to tune the morphology of LBP bisfullerene BHJ system, providing sufficient polymer ordering, formation of a bis-fullerene pure phase, and segregation of bis-fullerene to the air surface to optimize the morphology of the active layer. Moreover, this process is broadly applicable to improving current disappointing LBP bis-fullerene systems to optimize their morphology and OPV performance post-deposition, including higher VOC and power conversion efficiency.

  18. Control of morphology and function of low band gap polymer-bis-fullerene mixed heterojunctions in organic photovoltaics with selection solvent vapor annealing

    SciTech Connect (OSTI)

    Chen, Huipeng; Hsiao, Yu-Che; Hu, Bin; Dadmun, Mark D

    2014-01-01

    Replacing PCBM with a bis-adduct fullerene (i.e. ICBA) has been reported to significantly improve the open circuit voltage (VOC) and power conversion efficiency (PCE) in P3HT bulk heterojunctions. However, for the most promising low band-gap polymer (LBP) systems, replacing PCBM with ICBA results in very poor shortcircuit current (JSC) and PCE although the VOC is significantly improved. Therefore, in this work, we have completed small angle neutron scattering and neutron reflectometry experiments to study the impact of post-deposition solvent annealing (SA) with control of solvent quality on the morphology and performance of LBP bis-fullerene BHJ photovoltaics. The results show that SA in a solvent that is selective for the LBP results in a depletion of bis-fullerene near the air surface, which limits device performance. SA in a solvent vapor which has similar solubility for polymer and bis-fullerene results in a higher degree of polymer ordering, bis-fullerene phase separation, and segregation of the bis-fullerene to the air surface, which facilitates charge transport and increases power conversion efficiency (PCE) by 100%. The highest degree of polymer ordering combined with significant bis-fullerene phase separation and segregation of bis-fullerene to the air surface is obtained by SA in a solvent vapor that is selective for the bis-fullerene. The resultant morphology increases PCE by 190%. These results indicate that solvent annealing with judicious solvent choice provides a unique tool to tune the morphology of LBP bisfullerene BHJ system, providing sufficient polymer ordering, formation of a bis-fullerene pure phase, and segregation of bis-fullerene to the air surface to optimize the morphology of the active layer. Moreover, this process is broadly applicable to improving current disappointing LBP bis-fullerene systems to optimize their morphology and OPV performance post-deposition, including higher VOC and power conversion efficiency.

  19. GAP | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    GAP

  20. Visible-light absorption and large band-gap bowing of GaN1-xSbx from first principles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sheetz, R. Michael; Richter, Ernst; Andriotis, Antonis N.; Lisenkov, Sergey; Pendyala, Chandrashekhar; Sunkara, Mahendra K.; Menon, Madhu

    2011-08-01

    Applicability of the Ga(Sbx)N1-x alloys for practical realization of photoelectrochemical water splitting is investigated using first-principles density functional theory incorporating the local density approximation and generalized gradient approximation plus the Hubbard U parameter formalism. Our calculations reveal that a relatively small concentration of Sb impurities is sufficient to achieve a significant narrowing of the band gap, enabling absorption of visible light. Theoretical results predict that Ga(Sbx)N1-x alloys with 2-eV band gaps straddle the potential window at moderate to low pH values, thus indicating that dilute Ga(Sbx)N1-x alloys could be potential candidates for splitting water under visible light irradiation.

  1. Synthesis of cadmium telluride quantum wires and the similarity of their band gaps to those of equidiameter cadmium telluride quantum dots

    SciTech Connect (OSTI)

    Wang, Lin-Wang; Sun, Jianwei; Wang, Lin-Wang; Buhro, William E.

    2008-07-11

    High-quality colloidal CdTe quantum wires having purposefully controlled diameters in the range of 5-11 nm are grown by the solution-liquid-solid (SLS) method, using Bi-nanoparticle catalysts, cadmium octadecylphosphonate and trioctylphosphine telluride as precursors, and a TOPO solvent. The wires adopt the wurtzite structure, and grow along the [002] direction (parallel to the c axis). The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to the experimental results for high-quality CdTe quantum dots. In contrast to the predictions of an effective-mass approximation, particle-in-a-box model, and previous experimental results from CdSe and InP dot-wire comparisons, the band gaps of CdTe dots and wires of like diameter are found to be experimentally indistinguishable. The present results are analyzed using density functional theory under the local-density approximation by implementing a charge-patching method. The higher-level theoretical analysis finds the general existence of a threshold diameter, above which dot and wire band gaps converge. The origin and magnitude of this threshold diameter is discussed.

  2. Effect of thermal annealing on structure and optical band gap of Se{sub 66}Te{sub 25}In{sub 9} thin films

    SciTech Connect (OSTI)

    Dwivedi, D. K.; Pathak, H. P.; Shukla, Nitesh; Kumar, Vipin

    2015-05-15

    Thin films of a-Se{sub 66}Te{sub 25}In{sub 9} have been deposited onto a chemically cleaned glass substrate by thermal evaporation technique under vacuum. Glassy nature of the films has been ascertained by X-ray diffraction pattern. The analysis of absorption spectra, measured at normal incidence, in the spectral range 400-1100 nm has been used for the optical characterization of thin films under investigation. The effect of thermal annealing on structure and optical band gap (E{sub g}) of a-Se{sub 66}Te{sub 25}In{sub 9} have been studied.

  3. Method for producing a thin sample band in a microchannel device

    DOE Patents [OSTI]

    Griffiths, Stewart K.; Nilson, Robert H.

    2004-08-03

    The present invention improves the performance of microchannel systems for chemical and biological synthesis and analysis by providing a method and apparatus for producing a thin band of a species sample. Thin sample bands improve the resolution of microchannel separation processes, as well as many other processes requiring precise control of sample size and volume. The new method comprises a series of steps in which a species sample is manipulated by controlled transport through a junction formed at the intersection of four or more channels. A sample is first inserted into the end of one of these channels in the vicinity of the junction. Next, this sample is thinned by transport across the junction one or more times. During these thinning steps, flow enters the junction through one of the channels and exists through those remaining, providing a divergent flow field that progressively stretches and thins the band with each traverse of the junction. The thickness of the resulting sample band may be smaller than the channel width. Moreover, the thickness of the band may be varied and controlled by altering the method alone, without modification to the channel or junction geometries. The invention is applicable to both electroosmotic and electrophoretic transport, to combined electrokinetic transport, and to some special cases in which bulk fluid transport is driven by pressure gradients. It is further applicable to channels that are open, filled with a gel or filled with a porous or granular material.

  4. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    SciTech Connect (OSTI)

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-07-07

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  5. Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix

    DOE Patents [OSTI]

    Forrest, Stephen R.

    2008-08-19

    A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

  6. Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

    DOE Patents [OSTI]

    Forrest, Stephen R.; Wei, Guodan

    2010-07-06

    A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

  7. Band-Gap Reduction and Dopant Interaction in Epitaxial La,Cr Co-doped SrTiO3 Thin Films

    SciTech Connect (OSTI)

    Comes, Ryan B.; Sushko, Petr; Heald, Steve M.; Colby, Robert J.; Bowden, Mark E.; Chambers, Scott A.

    2014-12-03

    We show that by co-doping SrTiO3 (STO) epitaxial thin films with equal amounts of La and Cr it is possible to produce films with an optical band gap ~0.9 eV lower than that of undoped STO. Sr1-xLaxTi1-xCrxO3 thin films were deposited by molecular beam epitaxy and characterized using x-ray photoelectron spectroscopy and x-ray absorption near-edge spectroscopy to show that the Cr dopants are almost exclusively in the Cr3+ oxidation state. Extended x-ray absorption fine structure measurements and theoretical modeling suggest that it is thermodynamically preferred for La and Cr dopants to occupy nearest neighbor A- and B-sites in the lattice. Transport measurements show that the material exhibits variable-range hopping conductivity with high resistivity. These results create new opportunities for the use of doped STO films in photovoltaic and photocatalytic applications.

  8. Wide band gap semiconductor templates

    DOE Patents [OSTI]

    Arendt, Paul N.; Stan, Liliana; Jia, Quanxi; DePaula, Raymond F.; Usov, Igor O.

    2010-12-14

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  9. Efficient H{sub 2} production over Au/graphene/TiO{sub 2} induced by surface plasmon resonance of Au and band-gap excitation of TiO{sub 2}

    SciTech Connect (OSTI)

    Liu, Yang; Yu, Hongtao; Wang, Hua; Chen, Shuo; Quan, Xie

    2014-11-15

    Highlights: Both surface plasmon resonance and band-gap excitation were used for H{sub 2} production. Au/Gr/TiO{sub 2} composite photocatalyst was synthesized. Au/Gr/TiO{sub 2} exhibited enhancement of light absorption and charge separation. H{sub 2} production rate of Au/Gr/TiO{sub 2} was about 2 times as high as that of Au/TiO{sub 2}. - Abstract: H{sub 2} production over Au/Gr/TiO{sub 2} composite photocatalyst induced by surface plasmon resonance of Au and band-gap excitation of TiO{sub 2} using graphene (Gr) as an electron acceptor has been investigated. Electron paramagnetic resonance study indicated that, in this composite, Gr collected electrons not only from Au with surface plasmon resonance but also from TiO{sub 2} with band-gap excitation. Surface photovoltage and UVvis absorption measurements revealed that compared with Au/TiO{sub 2}, Au/Gr/TiO{sub 2} displayed more effective photogenerated charge separation and higher optical absorption. Benefiting from these advantages, the H{sub 2} production rate of Au/Gr/TiO{sub 2} composite with Gr content of 1.0 wt% and Au content of 2.0 wt% was about 2 times as high as that of Au/TiO{sub 2}. This work represents an important step toward the efficient application of both surface plasmon resonance and band-gap excitation on the way to converting solar light into chemical energy.

  10. Structural phase transition, narrow band gap, and room-temperature ferromagnetism in [KNbO{sub 3}]{sub 1?x}[BaNi{sub 1/2}Nb{sub 1/2}O{sub 3??}]{sub x} ferroelectrics

    SciTech Connect (OSTI)

    Zhou, Wenliang; Yang, Pingxiong Chu, Junhao; Deng, Hongmei

    2014-09-15

    Structural phase transition, narrow band gap (E{sub g}), and room-temperature ferromagnetism (RTFM) have been observed in the [KNbO{sub 3}]{sub 1?x}[BaNi{sub 1/2}Nb{sub 1/2}O{sub 3??}]{sub x} (KBNNO) ceramics. All the samples have single phase perovskite structure, but exhibit a gradual transition behaviour from the orthorhombic to a cubic structure with the increase of x. Raman spectroscopy analysis not only corroborates this doping-induced change in normal structure but also shows the local crystal symmetry for x ? 0.1 compositions to deviate from the idealized cubic perovskite structure. A possible mechanism for the observed specific changes in lattice structure is discussed. Moreover, it is noted that KBNNO with compositions x?=?0.10.3 have quite narrow E{sub g} of below 1.5?eV, much smaller than the 3.2?eV band gap of parent KNbO{sub 3} (KNO), which is due to the increasing Ni 3d electronic states within the gap of KNO. Furthermore, the KBNNO materials present RTFM near a tetragonal to cubic phase boundary. With increasing x from 0 to 0.3, the magnetism of the samples develops from diamagnetism to ferromagnetism and paramagnetism, originating from the ferromagneticantiferromagnetic competition. These results are helpful in the deeper understanding of phase transitions, band gap tunability, and magnetism variations in perovskite oxides and show the potential role, such materials can play, in perovskite solar cells and multiferroic applications.

  11. Sealing device

    DOE Patents [OSTI]

    Garcia-Crespo, Andres Jose

    2013-12-10

    A sealing device for sealing a gap between a dovetail of a bucket assembly and a rotor wheel is disclosed. The sealing device includes a cover plate configured to cover the gap and a retention member protruding from the cover plate and configured to engage the dovetail. The sealing device provides a seal against the gap when the bucket assemply is subjected to a centrifugal force.

  12. Real-structure effects: Band gaps of Mg_xZn_{1-x}O, Cd_xZn_{1-x}O, and n-type ZnO from ab-initio calculations

    SciTech Connect (OSTI)

    Schleife, A; Bechstedt, F

    2012-02-15

    Many-body perturbation theory is applied to compute the quasiparticle electronic structures and the optical-absorption spectra (including excitonic effects) for several transparent conducting oxides. We discuss HSE+G{sub 0}W{sub 0} results for band structures, fundamental band gaps, and effective electron masses of MgO, ZnO, CdO, SnO{sub 2}, SnO, In{sub 2}O{sub 3}, and SiO{sub 2}. The Bethe-Salpeter equation is solved to account for excitonic effects in the calculation of the frequency-dependent absorption coefficients. We show that the HSE+G{sub 0}W{sub 0} approach and the solution of the Bethe-Salpeter equation are very well-suited to describe the electronic structure and the optical properties of various transparent conducting oxides in good agreement with experiment.

  13. Quantum-Size Effects on the Pressure-Induced Direct-to-Indirect Band-Gap Transition in InP Quantum Dots

    SciTech Connect (OSTI)

    Fu, H.; Zunger, A.

    1998-06-01

    We predict that the difference in quantum confinement energies of {Gamma} -like and X -like conduction states in a covalent quantum dot will cause the direct-to-indirect transition to occur at substantially lower pressure than in the bulk material. Furthermore, the first-order transition in the bulk is predicted to become, for certain dot sizes, a second-order transition. Measurements of the {open_quotes}anticrossing gap{close_quotes} could thus be used to obtain unique information on the {Gamma}-X- L intervalley coupling, predicted here to be surprisingly large (50{endash}100thinspthinspmeV). {copyright} {ital 1998} {ital The American Physical Society}

  14. Systematic approach for simultaneously correcting the band-gap andp-dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Jianwei; Zhang, Yong; Wang, Lin-Wang

    2015-07-31

    We propose a systematic approach that can empirically correct three major errors typically found in a density functional theory (DFT) calculation within the local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X = N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X = O,S,Se,Te. By correcting (1) the binary band gaps at high-symmetry points , L, X, (2) the separation of p-and d-orbital-derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA-based quasi-first-principles methodmore » can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems, much needed for material discovery and design.« less

  15. Welding arc gap ionization device

    DOE Patents [OSTI]

    Schweikhardt, George M.

    1976-01-01

    An alpha emitting isotope is positioned near the tip of a TIG welding electrode so that the alpha radiation can provide an ionized path between the electrode and the workpiece.

  16. Switching of the photonic band gap in three-dimensional film photonic crystals based on opal-VO{sub 2} composites in the 1.3-1.6 {mu}m spectral range

    SciTech Connect (OSTI)

    Pevtsov, A. B. Grudinkin, S. A.; Poddubny, A. N.; Kaplan, S. F.; Kurdyukov, D. A.; Golubev, V. G.

    2010-12-15

    The parameters of three-dimensional photonic crystals based on opal-VO{sub 2} composite films in the 1.3-1.6 {mu}m spectral range important for practical applications (Telecom standard) are numerically calculated. For opal pores, the range of filling factors is established (0.25-0.6) wherein the composite exhibits the properties of a three-dimensional insulator photonic crystal. On the basis of the opal-VO{sub 2} composites, three-dimensional photonic film crystals are synthesized with specified parameters that provide a maximum shift of the photonic band gap in the vicinity of the wavelength {approx}1.5 {mu}m ({approx}170 meV) at the semiconductor-metal transition in VO{sub 2}.

  17. Variation in band gap of lanthanum chromate by transition metals doping LaCr{sub 0.9}A{sub 0.1}O{sub 3} (A:Fe/Co/Ni)

    SciTech Connect (OSTI)

    Naseem, Swaleha Khan, Wasi Saad, A. A. Shoeb, M. Ahmed, Hilal Naqvi, A. H.; Husain, Shahid

    2014-04-24

    Transition metal (Fe, Co, Ni) doped lanthanum chromate (LaCrO{sub 3}) nanoparticles (NPs) were prepared by gel combustion method and calcinated at 800°C. Microstructural studies were carried by XRD and SEM/EDS techniques. The results of structural characterization show the formation of all samples in single phase without any impurity. Optical properties were studied by UV- visible and photoluminescence techniques. The energy band gap was calculated and the variation was observed with the doping of transition metal ions. Photoluminescence spectra show the emission peak maxima for the pure LaCrO{sub 3} at about 315 nm. Influence of Fe, Co, Ni doping was studied and compared with pure lanthanum chromate nanoparticles.

  18. Hybrid method of making an amorphous silicon P-I-N semiconductor device

    DOE Patents [OSTI]

    Moustakas, Theodore D.; Morel, Don L.; Abeles, Benjamin

    1983-10-04

    The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

  19. Broad-band beam buncher

    DOE Patents [OSTI]

    Goldberg, David A. (Walnut Creek, CA); Flood, William S. (Berkeley, CA); Arthur, Allan A. (Martinez, CA); Voelker, Ferdinand (Orinda, CA)

    1986-01-01

    A broad-band beam buncher is disclosed, comprising an evacuated housing, an electron gun therein for producing an electron beam, a buncher cavity having entrance and exit openings through which the beam is directed, grids across such openings, a source providing a positive DC voltage between the cavity and the electron gun, a drift tube through which the electron beam travels in passing through such cavity, grids across the ends of such drift tube, gaps being provided between the drift tube grids and the entrance and exit grids, a modulator for supplying an ultrahigh frequency modulating signal to the drift tube for producing velocity modulation of the electrons in the beam, a drift space in the housing through which the velocity modulated electron beam travels and in which the beam is bunched, and a discharge opening from such drift tube and having a grid across such opening through which the bunched electron beam is discharged into an accelerator or the like. The buncher cavity and the drift tube may be arranged to constitute an extension of a coaxial transmission line which is employed to deliver the modulating signal from a signal source. The extended transmission line may be terminated in its characteristic impedance to afford a broad-band response and the device as a whole designed to effect broad-band beam coupling, so as to minimize variations of the output across the response band.

  20. Spark gap with low breakdown voltage jitter

    DOE Patents [OSTI]

    Rohwein, Gerald J.; Roose, Lars D.

    1996-01-01

    Novel spark gap devices and electrodes are disclosed. The novel spark gap devices and electrodes are suitable for use in a variety of spark gap device applications. The shape of the electrodes gives rise to local field enhancements and reduces breakdown voltage jitter. Breakdown voltage jitter of approximately 5% has been measured in spark gaps according the invention. Novel electrode geometries and materials are disclosed.

  1. Spark gap with low breakdown voltage jitter

    DOE Patents [OSTI]

    Rohwein, G.J.; Roose, L.D.

    1996-04-23

    Novel spark gap devices and electrodes are disclosed. The novel spark gap devices and electrodes are suitable for use in a variety of spark gap device applications. The shape of the electrodes gives rise to local field enhancements and reduces breakdown voltage jitter. Breakdown voltage jitter of approximately 5% has been measured in spark gaps according the invention. Novel electrode geometries and materials are disclosed. 13 figs.

  2. Eight electrode optical readout gap

    DOE Patents [OSTI]

    Boettcher, G.E.; Crain, R.W.

    1984-01-01

    A protective device for a plurality of electrical circuits includes a plurality of isolated electrodes forming a gap with a common electrode. An output signal, electrically isolated from the circuits being monitored, is obtained by a photosensor viewing the discharge gap through an optical window. Radioactive stabilization of discharge characteristics is provided for slowly changing voltages and carbon tipped dynamic starters provide desirable discharge characteristics for rapidly varying voltages. A hydrogen permeation barrier is provided on external surfaces of the device.

  3. Eight electrode optical readout gap

    DOE Patents [OSTI]

    Boettcher, Gordon E.; Crain, Robert W.

    1985-01-01

    A protective device for a plurality of electrical circuits includes a pluity of isolated electrodes forming a gap with a common electrode. An output signal, electrically isolated from the circuits being monitored, is obtained by a photosensor viewing the discharge gap through an optical window. Radioactive stabilization of discharge characteristics is provided for slowly changing voltages and carbon tipped dynamic starters provide desirable discharge characteristics for rapidly varying voltages. A hydrogen permeation barrier is provided on external surfaces of the device.

  4. Gap and stripline combined monitor

    DOE Patents [OSTI]

    Yin, Y.

    1986-08-19

    A combined gap and stripline monitor device for measuring the intensity and position of a charged particle beam bunch in a beam pipe of a synchrotron radiation facility is disclosed. The monitor has first and second beam pipe portions with an axial gap therebetween. An outer pipe cooperates with the first beam pipe portion to form a gap enclosure, while inner strips cooperate with the first beam pipe portion to form a stripline monitor, with the stripline length being the same as the gap enclosure length. 4 figs.

  5. Gap and stripline combined monitor

    DOE Patents [OSTI]

    Yin, Y.

    1984-02-16

    A combined gap and stripline monitor device for measuring the intensity and position of a charged particle beam bunch in a beam pipe of a synchrotron radiation facility. The monitor has first and second beam pipe portions with an axial gap therebetween. An outer pipe cooperates with the first beam pipe portion to form a gap enclosure, while inner strips cooperate with the first beam pipe portion to form a stripline monitor, with the stripline length being the same as the gap enclosure length.

  6. Gap and stripline combined monitor

    DOE Patents [OSTI]

    Yin, Yan

    1986-01-01

    A combined gap and stripline monitor device (10) for measuring the intensity and position of a charged particle beam bunch in a beam pipe of a synchotron radiation facility. The monitor has first and second beam pipe portions (11a, 11b) with an axial gap (12) therebetween. An outer pipe (14) cooperates with the first beam pipe portion (11a) to form a gap enclosure, while inner strips (23a-d) cooperate with the first beam pipe portion (11a) to form a stripline monitor, with the stripline length being the same as the gap enclosure length.

  7. Gap Resolution

    Energy Science and Technology Software Center (OSTI)

    2009-06-16

    With the continued improvements of next generation DNA sequencing technologies and their advantages over traditional Sanger sequencing, the Joint Genome Institute (JGI) has modified its sequencing pipeline to take advantage of the benefits of such technologies. Currently, standard 454 Titanium, paired end 454 Titanium, and Illumina GAll data are generated for all microbial projects and then assembled using draft assemblies at a much greater throughput than before. However, it also presents us with new challenges.more » In addition to the increased throughput, we also have to deal with a larger number of gaps in the Newbler genome assemblies. Gaps in these assemblies are usually caused by repeats (Newbler collapses repeat copies into individual contigs, thus creating gaps), strong secondary structures, and artifacts of the PCR process (specific to 454 paired end libraries). Some gaps in draft assemblies can be resolved merely by adding back the collapsed data from repeats. To expedite gap closure and assembly improvement on large numbers of these assemblies, we developed software to address this issue.« less

  8. Thermovoltaic semiconductor device including a plasma filter

    DOE Patents [OSTI]

    Baldasaro, Paul F.

    1999-01-01

    A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

  9. Band anticrossing in dilute nitrides

    SciTech Connect (OSTI)

    Shan, W.; Yu, K.M.; Walukiewicz, W.; Wu, J.; Ager III, J.W.; Haller, E.E.

    2003-12-23

    Alloying III-V compounds with small amounts of nitrogen leads to dramatic reduction of the fundamental band-gap energy in the resulting dilute nitride alloys. The effect originates from an anti-crossing interaction between the extended conduction-band states and localized N states. The interaction splits the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy. The changes in the conduction band structure result in significant increase in electron effective mass and decrease in the electron mobility, and lead to a large enhance of the maximum doping level in GaInNAs doped with group VI donors. In addition, a striking asymmetry in the electrical activation of group IV and group VI donors can be attributed to mutual passivation process through formation of the nearest neighbor group-IV donor nitrogen pairs.

  10. Banded electromagnetic stator core

    DOE Patents [OSTI]

    Fanning, Alan W.; Gonzales, Aaron A.; Patel, Mahadeo R.; Olich, Eugene E.

    1996-01-01

    A stator core for an electromagnetic pump includes a plurality of circumferentially adjoining groups of flat laminations disposed about a common centerline axis and collectively defining a central bore and a discontinuous outer perimeter, with adjacent groups diverging radially outwardly to form V-shaped gaps. An annular band surrounds the groups and is predeterminedly tensioned to clamp together the laminations, and has a predetermined flexibility in a radial direction to form substantially straight bridge sections between the adjacent groups.

  11. Banded electromagnetic stator core

    DOE Patents [OSTI]

    Fanning, Alan W.; Gonzales, Aaron A.; Patel, Mahadeo R.; Olich, Eugene E.

    1994-01-01

    A stator core for an electromagnetic pump includes a plurality of circumferentially adjoining groups of flat laminations disposed about a common centerline axis and collectively defining a central bore and a discontinuous outer perimeter, with adjacent groups diverging radially outwardly to form V-shaped gaps. An annular band surrounds the groups and is predeterminedly tensioned to clamp together the laminations, and has a predetermined flexibility in a radial direction to form substantially straight bridge sections between the adjacent groups.

  12. Banded electromagnetic stator core

    DOE Patents [OSTI]

    Fanning, A.W.; Gonzales, A.A.; Patel, M.R.; Olich, E.E.

    1996-06-11

    A stator core for an electromagnetic pump includes a plurality of circumferentially adjoining groups of flat laminations disposed about a common centerline axis and collectively defining a central bore and a discontinuous outer perimeter, with adjacent groups diverging radially outwardly to form V-shaped gaps. An annular band surrounds the groups and is predeterminedly tensioned to clamp together the laminations, and has a predetermined flexibility in a radial direction to form substantially straight bridge sections between the adjacent groups. 5 figs.

  13. Banded electromagnetic stator core

    DOE Patents [OSTI]

    Fanning, A.W.; Gonzales, A.A.; Patel, M.R.; Olich, E.E.

    1994-04-05

    A stator core for an electromagnetic pump includes a plurality of circumferentially adjoining groups of flat laminations disposed about a common centerline axis and collectively defining a central bore and a discontinuous outer perimeter, with adjacent groups diverging radially outwardly to form V-shaped gaps. An annular band surrounds the groups and is predeterminedly tensioned to clamp together the laminations, and has a predetermined flexibility in a radial direction to form substantially straight bridge sections between the adjacent groups. 5 figures.

  14. Monolithic multi-color light emission/detection device

    DOE Patents [OSTI]

    Wanlass, Mark W.

    1995-01-01

    A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber.

  15. Monolithic multi-color light emission/detection device

    DOE Patents [OSTI]

    Wanlass, M.W.

    1995-02-21

    A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber. 5 figs.

  16. Determination of Band Offsets between the High-k Dielectric LaAlO3...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    found that band gaps of high-k dielectric films are also significantly affected by film growth conditions. Therefore, we can not rely on previously published LaAlO3 band gap...

  17. Strain-engineered band parameters of graphene-like SiC monolayer

    SciTech Connect (OSTI)

    Behera, Harihar; Mukhopadhyay, Gautam

    2014-10-06

    Using full-potential density functional theory (DFT) calculations we show that the band gap and effective masses of charge carriers in SiC monolayer (ML-SiC) in graphene-like two-dimensional honeycomb structure are tunable by strain engineering. ML-SiC was found to preserve its flat 2D graphene-like structure under compressive strain up to 7%. A transition from indirect-to-direct gap-phase is predicted to occur for a strain value lying within the interval (1.11 %, 1.76%). In both gap-phases band gap decreases with increasing strain, although the rate of decrease is different in the two gap-phases. Effective mass of electrons show a non-linearly decreasing trend with increasing tensile strain in the direct gap-phase. The strain-sensitive properties of ML-SiC, may find applications in future strain-sensors, nanoelectromechanical systems (NEMS) and nano-optomechanical systems (NOMS) and other nano-devices.

  18. Pneumatic gap sensor and method

    DOE Patents [OSTI]

    Bagdal, Karl T.; King, Edward L.; Follstaedt, Donald W.

    1992-01-01

    An apparatus and method for monitoring and maintaining a predetermined width in the gap between a casting nozzle and a casting wheel, wherein the gap is monitored by means of at least one pneumatic gap sensor. The pneumatic gap sensor is mounted on the casting nozzle in proximity to the casting surface and is connected by means of a tube to a regulator and a transducer. The regulator provides a flow of gas through a restictor to the pneumatic gap sensor, and the transducer translates the changes in the gas pressure caused by the proximity of the casting wheel to the pneumatic gap sensor outlet into a signal intelligible to a control device. The relative positions of the casting nozzle and casting wheel can thereby be selectively adjusted to continually maintain a predetermined distance between their adjacent surfaces. The apparatus and method enables accurate monitoring of the actual casting gap in a simple and reliable manner resistant to the extreme temperatures and otherwise hostile casting environment.

  19. Pneumatic gap sensor and method

    DOE Patents [OSTI]

    Bagdal, K.T.; King, E.L.; Follstaedt, D.W.

    1992-03-03

    An apparatus and method for monitoring and maintaining a predetermined width in the gap between a casting nozzle and a casting wheel, wherein the gap is monitored by means of at least one pneumatic gap sensor. The pneumatic gap sensor is mounted on the casting nozzle in proximity to the casting surface and is connected by means of a tube to a regulator and a transducer. The regulator provides a flow of gas through a restictor to the pneumatic gap sensor, and the transducer translates the changes in the gas pressure caused by the proximity of the casting wheel to the pneumatic gap sensor outlet into a signal intelligible to a control device. The relative positions of the casting nozzle and casting wheel can thereby be selectively adjusted to continually maintain a predetermined distance between their adjacent surfaces. The apparatus and method enables accurate monitoring of the actual casting gap in a simple and reliable manner resistant to the extreme temperatures and otherwise hostile casting environment. 6 figs.

  20. Systematic approach for simultaneously correcting the band-gap andp-dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

    SciTech Connect (OSTI)

    Wang, Jianwei; Zhang, Yong; Wang, Lin-Wang

    2015-07-31

    We propose a systematic approach that can empirically correct three major errors typically found in a density functional theory (DFT) calculation within the local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X = N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X = O,S,Se,Te. By correcting (1) the binary band gaps at high-symmetry points , L, X, (2) the separation of p-and d-orbital-derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA-based quasi-first-principles method can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems, much needed for material discovery and design.

  1. Superlattice optical device

    DOE Patents [OSTI]

    Biefeld, R.M.; Fritz, I.J.; Gourley, P.L.; Osbourn, G.C.

    A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.

  2. Superlattice optical device

    DOE Patents [OSTI]

    Biefeld, Robert M.; Fritz, Ian J.; Gourley, Paul L.; Osbourn, Gordon C.

    1986-01-01

    A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.

  3. Engineering the Electronic Band Structure for Multiband Solar Cells

    SciTech Connect (OSTI)

    Lopez, N.; Reichertz, L.A.; Yu, K.M.; Campman, K.; Walukiewicz, W.

    2010-07-12

    Using the unique features of the electronic band structure of GaNxAs1-x alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the Band Anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications.

  4. Systematic approach for simultaneously correcting the band-gap...

    Office of Scientific and Technical Information (OSTI)

    simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X O,S,Se,Te. ...

  5. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology), D.-H. Lee (University of California, Berkeley), F. Guinea (Instituto de Ciencia de Materiales de Madrid, Spain), and A.H. Castro Neto (Boston University). Research...

  6. Systematic study of photoluminescence upon band gap excitation...

    Office of Scientific and Technical Information (OSTI)

    12TiOsub 3:Pr (RLa, Gd, Lu, and Y) Citation Details In-Document Search Title: ... 12TiOsub 3:Pr (RLa, Gd, Lu, and Y) Prsup 3+-doped perovskites R sub 1...

  7. Electron Elevator: Excitations across the Band Gap via a Dynamical...

    Office of Scientific and Technical Information (OSTI)

    GrantContract Number: AC52-07NA27344 Type: Publisher's Accepted Manuscript Journal Name: Physical Review Letters Additional Journal Information: Journal Volume: 116; Journal ...

  8. Better band gaps with asymptotically corrected local exchange potentials

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Singh, Prashant; Harbola, Manoj K.; Hemanadhan, M.; Mookerjee, Abhijit; Johnson, D. D.

    2016-02-22

    In this study, we formulate a spin-polarized van Leeuwen and Baerends (vLB) correction to the local density approximation (LDA) exchange potential [R. van Leeuwen and E. J. Baerends, Phys. Rev. A 49, 2421 (1994)] that enforces the ionization potential (IP) theorem following T. Stein et al. [Phys. Rev. Lett. 105, 266802 (2010)]. For electronic-structure problems, the vLB correction replicates the behavior of exact-exchange potentials, with improved scaling and well-behaved asymptotics, but with the computational cost of semilocal functionals. The vLB + IP correction produces a large improvement in the eigenvalues over those from the LDA due to correct asymptotic behaviormore » and atomic shell structures, as shown in rare-gas, alkaline-earth, zinc-based oxides, alkali halides, sulfides, and nitrides. In half-Heusler alloys, this asymptotically corrected LDA reproduces the spin-polarized properties correctly, including magnetism and half-metallicity. We also consider finite-sized systems [e.g., ringed boron nitride (B12N12) and graphene (C24)] to emphasize the wide applicability of the method.« less

  9. Direct band gap electroluminescence from bulk germanium at room...

    Office of Scientific and Technical Information (OSTI)

    Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan) Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1...

  10. Substrate-Induced Band-Gap Opening in Epitaxial Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    controllable by chemically doping or by an electric field, high thermal conductivity, and high quality and strength-quickly stamped it as a possible material for future generations...

  11. Optoelectronic device

    DOE Patents [OSTI]

    Bonekamp, Jeffrey E.; Boven, Michelle L.; Gaston, Ryan S.

    2014-09-09

    The invention is an optoelectronic device comprising an active portion which converts light to electricity or converts electricity to light, the active portion having a front side for the transmittal of the light and a back side opposite from the front side, at least two electrical leads to the active portion to convey electricity to or from the active portion, an enclosure surrounding the active portion and through which the at least two electrical leads pass wherein the hermetically sealed enclosure comprises at the front side of the active portion a barrier material which allows for transmittal of light, one or more getter materials disposed so as to not impede the transmission of light to or from the active portion, and a contiguous gap pathway to the getter material which pathway is disposed between the active portion and the barrier material.

  12. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  13. Inertial energy storage device

    DOE Patents [OSTI]

    Knight, Jr., Charles E.; Kelly, James J.; Pollard, Roy E.

    1978-01-01

    The inertial energy storage device of the present invention comprises a composite ring formed of circumferentially wound resin-impregnated filament material, a flanged hollow metal hub concentrically disposed in the ring, and a plurality of discrete filament bandsets coupling the hub to the ring. Each bandset is formed of a pair of parallel bands affixed to the hub in a spaced apart relationship with the axis of rotation of the hub being disposed between the bands and with each band being in the configuration of a hoop extending about the ring along a chordal plane thereof. The bandsets are disposed in an angular relationship with one another so as to encircle the ring at spaced-apart circumferential locations while being disposed in an overlapping relationship on the flanges of the hub. The energy storage device of the present invention has the capability of substantial energy storage due to the relationship of the filament bands to the ring and the flanged hub.

  14. Linear Scaling of the Exciton Binding Energy versus the Band...

    Office of Scientific and Technical Information (OSTI)

    Linear Scaling of the Exciton Binding Energy versus the Band Gap of Two-Dimensional Materials This content will become publicly available on August 6, 2016 Prev Next Title:...

  15. ISM band to U-NII band frequency transverter and method of frequency transversion

    DOE Patents [OSTI]

    Stepp, Jeffrey David; Hensley, Dale

    2006-09-12

    A frequency transverter (10) and method for enabling bi-frequency dual-directional transfer of digitally encoded data on an RF carrier by translating between a crowded or otherwise undesirable first frequency band, such as the 2.4 GHz ISM band, and a less-crowded or otherwise desirable second frequency band, such as the 5.0 GHz 6.0 GHz U-NII band. In a preferred embodiment, the transverter (10) connects between an existing data radio (11) and its existing antenna (30), and comprises a bandswitch (12); an input RF isolating device (14); a transmuter (16); a converter (18); a dual output local oscillator (20); an output RF isolating device (22); and an antenna (24) tuned to the second frequency band. The bandswitch (12) allows for bypassing the transverter (10), thereby facilitating its use with legacy systems. The transmuter (14) and converter (16) are adapted to convert to and from, respectively, the second frequency band.

  16. ISM band to U-NII band frequency transverter and method of frequency transversion

    DOE Patents [OSTI]

    Stepp, Jeffrey David; Hensley, Dale

    2006-04-04

    A frequency transverter (10) and method for enabling bi-frequency dual-directional transfer of digitally encoded data on an RF carrier by translating between a crowded or otherwise undesirable first frequency band, such as the 2.4 GHz ISM band, and a less-crowded or otherwise desirable second frequency band, such as the 5.0 GHz-6.0 GHz U-NII band. In a preferred embodiment, the transverter (10) connects between an existing data radio (11) and its existing antenna (30), and comprises a bandswitch (12); an input RF isolating device (14); a transmuter (16); a converter (18); a dual output local oscillator (20); an output RF isolating device (22); and an antenna (24) tuned to the second frequency band. The bandswitch (12) allows for bypassing the transverter (10), thereby facilitating its use with legacy systems. The transmuter (14) and converter (16) are adapted to convert to and from, respectively, the second frequency band.

  17. Interband cascade (IC) photovoltaic (PV) architecture for PV devices

    DOE Patents [OSTI]

    Yang, Rui Q.; Tian, Zhaobing; Mishima, Tetsuya D.; Santos, Michael B.; Johnson, Matthew B.; Klem, John F.

    2015-10-20

    A photovoltaic (PV) device, comprising a PV interband cascade (IC) stage, wherein the IC PV stage comprises an absorption region with a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier. An IC PV architecture for a photovoltaic device, the IC PV architecture comprising an absorption region, an intraband transport region coupled to the absorption region, and an interband tunneling region coupled to the intraband transport region and to the adjacent absorption region, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.

  18. SPARK GAP SWITCH

    DOE Patents [OSTI]

    Neal, R.B.

    1957-12-17

    An improved triggered spark gap switch is described, capable of precisely controllable firing time while switching very large amounts of power. The invention in general comprises three electrodes adjustably spaced and adapted to have a large potential impressed between the outer electrodes. The central electrode includes two separate elements electrically connected togetaer and spaced apart to define a pair of spark gaps between the end electrodes. Means are provided to cause the gas flow in the switch to pass towards the central electrode, through a passage in each separate element, and out an exit disposed between the two separate central electrode elements in order to withdraw ions from the spark gap.

  19. Hetero-junction photovoltaic device and method of fabricating the device

    DOE Patents [OSTI]

    Aytug, Tolga; Christen, David K; Paranthaman, Mariappan Parans; Polat, Ozgur

    2014-02-10

    A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.

  20. Fiber optic gap gauge

    DOE Patents [OSTI]

    Wood, Billy E.; Groves, Scott E.; Larsen, Greg J.; Sanchez, Roberto J.

    2006-11-14

    A lightweight, small size, high sensitivity gauge for indirectly measuring displacement or absolute gap width by measuring axial strain in an orthogonal direction to the displacement/gap width. The gap gauge includes a preferably titanium base having a central tension bar with springs connecting opposite ends of the tension bar to a pair of end connector bars, and an elongated bow spring connected to the end connector bars with a middle section bowed away from the base to define a gap. The bow spring is capable of producing an axial strain in the base proportional to a displacement of the middle section in a direction orthogonal to the base. And a strain sensor, such as a Fabry-Perot interferometer strain sensor, is connected to measure the axial strain in the base, so that the displacement of the middle section may be indirectly determined from the measurement of the axial strain in the base.

  1. Momentum dependence of the superconducting gap and in-gap states in MgB2 multiband superconductor

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mou, Daixiang; Jiang, Rui; Taufour, Valentin; Bud'ko, S. L.; Canfield, P. C.; Kaminski, Adam

    2015-06-29

    We use tunable laser-based angle-resolved photoemission spectroscopy to study the electronic structure of the multiband superconductor MgB2. These results form the baseline for detailed studies of superconductivity in multiband systems. We find that the magnitude of the superconducting gap on both σ bands follows a BCS-like variation with temperature with Δ0 ~ 7meV. Furthermore, the value of the gap is isotropic within experimental uncertainty and in agreement with a pure s-wave pairing symmetry. We observe in-gap states confined to kF of the σ band that occur at some locations of the sample surface. As a result, the energy of thismore » excitation, ~ 3 meV, was found to be somewhat larger than the previously reported gap on π Fermi sheet and therefore we cannot exclude the possibility of interband scattering as its origin.« less

  2. Integrated optical and electrical modeling of plasmon-enhanced thin film photovoltaics: A case-study on organic devices

    SciTech Connect (OSTI)

    Rourke, Devin; Ahn, Sungmo; Nardes, Alexandre M.; Lagemaat, Jao van de; Kopidakis, Nikos; Park, Wounjhang

    2014-09-21

    The nanoscale light control for absorption enhancement of organic photovoltaic (OPV) devices inevitably produces strongly non-uniform optical fields. These non-uniformities due to the localized optical modes are a primary route toward absorption enhancement in OPV devices. Therefore, a rigorous modeling tool taking into account the spatial distribution of optical field and carrier generation is necessary. Presented here is a comprehensive numerical model to describe the coupled optical and electrical behavior of plasmon-enhanced polymer:fullerene bulk heterojunction (BHJ) solar cells. In this model, a position-dependent electron-hole pair generation rate that could become highly non-uniform due to photonic nanostructures is directly calculated from the optical simulations. By considering the absorption and plasmonic properties of nanophotonic gratings included in two different popular device architectures, and applying the Poisson, current continuity, and drift/diffusion equations, the model predicts quantum efficiency, short-circuit current density, and desired carrier mobility ratios for bulk heterojunction devices incorporating nanostructures for light management. In particular, the model predicts a significant degradation of device performance when the carrier species with lower mobility are generated far from the collecting electrode. Consequently, an inverted device architecture is preferred for materials with low hole mobility. This is especially true for devices that include plasmonic nanostructures. Additionally, due to the incorporation of a plasmonic nanostructure, we use simulations to theoretically predict absorption band broadening of a BHJ into energies below the band gap, resulting in a 4.8% increase in generated photocurrent.

  3. Precision gap particle separator

    DOE Patents [OSTI]

    Benett, William J.; Miles, Robin; Jones, II., Leslie M.; Stockton, Cheryl

    2004-06-08

    A system for separating particles entrained in a fluid includes a base with a first channel and a second channel. A precision gap connects the first channel and the second channel. The precision gap is of a size that allows small particles to pass from the first channel into the second channel and prevents large particles from the first channel into the second channel. A cover is positioned over the base unit, the first channel, the precision gap, and the second channel. An port directs the fluid containing the entrained particles into the first channel. An output port directs the large particles out of the first channel. A port connected to the second channel directs the small particles out of the second channel.

  4. MULTIPLE SPARK GAP SWITCH

    DOE Patents [OSTI]

    Schofield, A.E.

    1958-07-22

    A multiple spark gap switch of unique construction is described which will permit controlled, simultaneous discharge of several capacitors into a load. The switch construction includes a disc electrode with a plurality of protuberances of generally convex shape on one surface. A firing electrode is insulatingly supponted In each of the electrode protuberances and extends substantially to the apex thereof. Individual electrodes are disposed on an insulating plate parallel with the disc electrode to form a number of spark gaps with the protuberances. These electrodes are each connected to a separate charged capacitor and when a voltage ls applied simultaneously between the trigger electrodes and the dlsc electrode, each spark gap fires to connect its capacitor to the disc electrode and a subsequent load.

  5. Co-Evaporated Cu2ZnSnSe4 Films and Devices

    SciTech Connect (OSTI)

    Repins, I.; Beall, C.; Vora, N.; DeHart, C.; Kuciauskas, D.; Dippo, P.; To, B.; Mann, J.; Hsu, W. C.; Goodrich, A.; Noufi, R.

    2012-06-01

    The use of vacuum co-evaporation to produce Cu2ZnSnSe4 photovoltaic devices with 9.15% total-area efficiency is described. These new results suggest that the early success of the atmospheric techniques for kesterite photovoltaics may be related to the ease with which one can control film composition and volatile phases, rather than a fundamental benefit of atmospheric conditions for film properties. The co-evaporation growth recipe is documented, as is the motivation for various features of the recipe. Characteristics of the resulting kesterite films and devices are shown in scanning electron micrographs, including photoluminescence, current-voltage, and quantum efficiency. Current-voltage curves demonstrate low series resistance without the light-dark cross-over seen in many devices in the literature. Band gap indicated by quantum efficiency and photoluminescence is roughly consistent with that expected from first principles calculation.

  6. Detached rock evaluation device

    DOE Patents [OSTI]

    Hanson, David R.

    1986-01-01

    A rock detachment evaluation device (10) having an energy transducer unit 1) for sensing vibrations imparted to a subject rock (172) for converting the sensed vibrations into electrical signals, a low band pass filter unit (12) for receiving the electrical signal and transmitting only a low frequency segment thereof, a high band pass filter unit (13) for receiving the electrical signals and for transmitting only a high frequency segment thereof, a comparison unit (14) for receiving the low frequency and high frequency signals and for determining the difference in power between the signals, and a display unit (16) for displaying indicia of the difference, which provides a quantitative measure of rock detachment.

  7. Dynamically Generated Mott Gap from Holography

    SciTech Connect (OSTI)

    Edalati, Mohammad; Leigh, Robert G.; Phillips, Philip W.

    2011-03-04

    In the fermionic sector of top-down approaches to holographic systems, one generically finds that the fermions are coupled to gravity and gauge fields in a variety of ways, beyond minimal coupling. In this Letter, we take one such interaction--a Pauli, or dipole, interaction--and study its effects on fermion correlators. We find that this interaction modifies the fermion spectral density in a remarkable way. As we change the strength of the interaction, we find that spectral weight is transferred between bands, and beyond a critical value, a gap emerges in the fermion density of states. A possible interpretation of this bulk interaction then is that it drives the dynamical formation of a (Mott) gap, in the absence of continuous symmetry breaking.

  8. Codoped direct-gap semiconductor scintillators

    DOE Patents [OSTI]

    Derenzo, Stephen Edward; Bourret-Courchesne, Edith; Weber, Marvin J.; Klintenberg, Mattias K.

    2008-07-29

    Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

  9. Codoped direct-gap semiconductor scintillators

    DOE Patents [OSTI]

    Derenzo, Stephen E.; Bourret-Courchesne, Edith; Weber, Marvin J.; Klintenberg, Mattias K.

    2006-05-23

    Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

  10. Relativistic electron beam crossed-field device

    DOE Patents [OSTI]

    Bekefi, George; Orzechowski, Thaddeus J.

    1980-01-01

    An intense relativistic crossed field device in a nested configuration wherein a field emission cathode is nested within a segmented annular anode with an annular gap separating the two.

  11. InfiniBand Interconnects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MPICH2 MVAPICH2 Equipment InfiniBand 4x 10 GigE Fujitsu switch NetEffect NIC Equipment & Benchmarks Latency Results Bandwidth Results Bidirectional Bandwidth...

  12. Band filling effects on temperature performance of intermediate band quantum wire solar cells

    SciTech Connect (OSTI)

    Kunets, Vas. P. Furrow, C. S.; Ware, M. E.; Souza, L. D. de; Benamara, M.; Salamo, G. J.; Mortazavi, M.

    2014-08-28

    Detailed studies of solar cell efficiency as a function of temperature were performed for quantum wire intermediate band solar cells grown on the (311)A plane. A remotely doped one-dimensional intermediate band made of self-assembled In{sub 0.4}Ga{sub 0.6}As quantum wires was compared to an undoped intermediate band and a reference p-i-n GaAs sample. These studies indicate that the efficiencies of these solar cells depend on the population of the one-dimensional band by equilibrium free carriers. A change in this population by free electrons under various temperatures affects absorption and carrier transport of non-equilibrium carriers generated by incident light. This results in different efficiencies for both the doped and undoped intermediate band solar cells in comparison with the reference GaAs p-i-n solar cell device.

  13. Photovoltaic device

    DOE Patents [OSTI]

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-06-02

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  14. Photovoltaic device

    DOE Patents [OSTI]

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-09-01

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device (10) with a multilayered photovoltaic cell assembly (100) and a body portion (200) joined at an interface region (410) and including an intermediate layer (500), at least one interconnecting structural member (1500), relieving feature (2500), unique component geometry, or any combination thereof.

  15. Two-dimensional topological crystalline insulator phase in Sb/Bi planar honeycomb with tunable Dirac gap

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hsu, Chia -Hsiu; Huang, Zhi -Quan; Crisostomo, Christian P.; Yao, Liang -Zi; Chuang, Feng -Chuan; Liu, Yu -Tzu; Wang, Baokai; Hsu, Chuang -Han; Lee, Chi -Cheng; Lin, Hsin; et al

    2016-01-14

    We predict planar Sb/Bi honeycomb to harbor a two-dimensional (2D) topological crystalline insulator (TCI) phase based on first-principles computations. Although buckled Sb and Bi honeycombs support 2D topological insulator (TI) phases, their structure becomes planar under tensile strain. The planar Sb/Bi honeycomb structure restores the mirror symmetry, and is shown to exhibit non-zero mirror Chern numbers, indicating that the system can host topologically protected edge states. Our computations show that the electronic spectrum of a planar Sb/Bi nanoribbon with armchair or zigzag edges contains two Dirac cones within the band gap and an even number of edge bands crossing themore » Fermi level. Lattice constant of the planar Sb honeycomb is found to nearly match that of hexagonal-BN. As a result, the Sb nanoribbon on hexagonal-BN exhibits gapped edge states, which we show to be tunable by an out-of the-plane electric field, providing controllable gating of edge state important for device applications.« less

  16. In-situ characterization of growth and interfaces in a-Si:H devices. Final subcontract report, 1 May 1991--31 May 1994

    SciTech Connect (OSTI)

    Collins, R.W.; Wronski, C.R.; An, I.; Lu, Y.; Nguyen, H.V. [Pennsylvania State Univ., University Park, PA (United States)

    1994-07-01

    This report describes work to identify materials parameters that can quantitatively describe the solar cell performance correctly in the initial and stabilized states and are consistent with a microscopic model of the metastable defect site. The objective is to be accomplished by applying results of in-situ analyses of a-Si:H surfaces and the transparent conducting oxide (TCO)/p/i interfaces to complement the present understanding of the electronic properties of materials and devices. A second objective of the program is to demonstrate, characterize, and understand improved doped and undoped ``wide-gap`` materials for use in achieving 15% stabilized photovoltaic modules (``wide-gap`` materials are defined as those materials with a band gap of at least 1.9 eV).

  17. Radiography Device

    Broader source: Energy.gov [DOE]

    This scenario provides the planning instructions, guidance, and evaluation forms necessary to conduct an exercise involving a highway shipment of a radiography device (Class 7 - Radioactive). This...

  18. Electrochromic devices

    DOE Patents [OSTI]

    Allemand, Pierre M.; Grimes, Randall F.; Ingle, Andrew R.; Cronin, John P.; Kennedy, Steve R.; Agrawal, Anoop; Boulton, Jonathan M.

    2001-01-01

    An electrochromic device is disclosed having a selective ion transport layer which separates an electrochemically active material from an electrolyte containing a redox active material. The devices are particularly useful as large area architectural and automotive glazings due to there reduced back reaction.

  19. BRAKE DEVICE

    DOE Patents [OSTI]

    O'Donnell, T.J.

    1959-03-10

    A brake device is described for utilization in connection with a control rod. The device comprises a pair of parallelogram link mechanisms, a control rod moveable rectilinearly therebetween in opposite directions, and shoes resiliently supported by the mechanism for frictional engagement with the control rod.

  20. Axial gap rotating electrical machine

    DOE Patents [OSTI]

    None

    2016-02-23

    Direct drive rotating electrical machines with axial air gaps are disclosed. In these machines, a rotor ring and stator ring define an axial air gap between them. Sets of gap-maintaining rolling supports bear between the rotor ring and the stator ring at their peripheries to maintain the axial air gap. Also disclosed are wind turbines using these generators, and structures and methods for mounting direct drive rotating electrical generators to the hubs of wind turbines. In particular, the rotor ring of the generator may be carried directly by the hub of a wind turbine to rotate relative to a shaft without being mounted directly to the shaft.

  1. Broad-band beam buncher

    DOE Patents [OSTI]

    Goldberg, D.A.; Flood, W.S.; Arthur, A.A.; Voelker, F.

    1984-03-20

    A broad-band beam bunther is disclosed, comprising an evacuated housing, an electron gun therein for producing an electron beam, a buncher cavity having entrance and exit openings through which the beam is directed, grids across such openings, a source providing a positive DC voltage between the cavity and the electron gun, a drift tube through which the electron beam travels in passing through such cavity, grids across the ends of such drift tube, gaps being provided between the drift tube grids and the entrance and exit grids, a modulator for supplying an ultrahigh frequency modulating signal to the drift tube for producing velocity modulation of the electrons in the beam, a drift space in the housing through which the velocity modulated electron beam travels and in which the beam is bunched, and a discharge opening from such drift tube and having a grid across such opening through which the bunched electron beam is discharged into an accelerator or the like. The buncher cavity and the drift tube may be arranged to constitute an extension of a coaxial transmission line which is employed to deliver the modulating signal from a signal source. The extended transmission line may be terminated in its characteristic impedance to afford a broad-

  2. FAQS Gap Analysis Qualification Card - Chemical Processing |...

    Office of Environmental Management (EM)

    Chemical Processing FAQS Gap Analysis Qualification Card - Chemical Processing Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences ...

  3. Nanotube resonator devices

    DOE Patents [OSTI]

    Jensen, Kenneth J; Zettl, Alexander K; Weldon, Jeffrey A

    2014-05-06

    A fully-functional radio receiver fabricated from a single nanotube is being disclosed. Simultaneously, a single nanotube can perform the functions of all major components of a radio: antenna, tunable band-pass filter, amplifier, and demodulator. A DC voltage source, as supplied by a battery, can power the radio. Using carrier waves in the commercially relevant 40-400 MHz range and both frequency and amplitude modulation techniques, successful music and voice reception has been demonstrated. Also disclosed are a radio transmitter and a mass sensor using a nanotube resonator device.

  4. Triaxial strongly deformed bands in {sup 164}Hf and the effect of elevated yrast line

    SciTech Connect (OSTI)

    Ma Wenchao

    2012-10-20

    Two exotic rotational bands have been identified in {sup 164}Hf and linked to known states. They are interpreted as being associated with the calculated triaxial strongly deformed (TSD) potential energy minimum. The bands are substantially stronger and are located at much lower spins than the previously discovered TSD bands in {sup 168}Hf. In addition to the proton and neutron shell gaps at large trixiality, it was proposed that the relative excitation energy of TSD bands above the yrast line plays an important role in the population of TSD bands.

  5. Plasma jet ignition device

    DOE Patents [OSTI]

    McIlwain, Michael E.; Grant, Jonathan F.; Golenko, Zsolt; Wittstein, Alan D.

    1985-01-15

    An ignition device of the plasma jet type is disclosed. The device has a cylindrical cavity formed in insulating material with an electrode at one end. The other end of the cylindrical cavity is closed by a metal plate with a small orifice in the center which plate serves as a second electrode. An arc jumping between the first electrode and the orifice plate causes the formation of a highly-ionized plasma in the cavity which is ejected through the orifice into the engine cylinder area to ignite the main fuel mixture. Two improvements are disclosed to enhance the operation of the device and the length of the plasma plume. One improvement is a metal hydride ring which is inserted in the cavity next to the first electrode. During operation, the high temperature in the cavity and the highly excited nature of the plasma breaks down the metal hydride, liberating hydrogen which acts as an additional fuel to help plasma formation. A second improvement consists of a cavity insert containing a plurality of spaced, metal rings. The rings act as secondary spark gap electrodes reducing the voltage needed to maintain the initial arc in the cavity.

  6. Integrated optical and electrical modeling of plasmon-enhanced thin film photovoltaics: A case-study on organic devices

    SciTech Connect (OSTI)

    Rourke, D; Ahn, S; Nardes, AM; van de Lagemaat, J; Kopidakis, N; Park, W

    2014-09-21

    The nanoscale light control for absorption enhancement of organic photovoltaic (OPV) devices inevitably produces strongly non-uniform optical fields. These non-uniformities due to the localized optical modes are a primary route toward absorption enhancement in OPV devices. Therefore, a rigorous modeling tool taking into account the spatial distribution of optical field and carrier generation is necessary. Presented here is a comprehensive numerical model to describe the coupled optical and electrical behavior of plasmon-enhanced polymer: fullerene bulk heterojunction (BHJ) solar cells. In this model, a position-dependent electron-hole pair generation rate that could become highly non-uniform due to photonic nanostructures is directly calculated from the optical simulations. By considering the absorption and plasmonic properties of nanophotonic gratings included in two different popular device architectures, and applying the Poisson, current continuity, and drift/diffusion equations, the model predicts quantum efficiency, short-circuit current density, and desired carrier mobility ratios for bulk heterojunction devices incorporating nanostructures for light management. In particular, the model predicts a significant degradation of device performance when the carrier species with lower mobility are generated far from the collecting electrode. Consequently, an inverted device architecture is preferred for materials with low hole mobility. This is especially true for devices that include plasmonic nanostructures. Additionally, due to the incorporation of a plasmonic nanostructure, we use simulations to theoretically predict absorption band broadening of a BHJ into energies below the band gap, resulting in a 4.8% increase in generated photocurrent. (C) 2014 AIP Publishing LLC.

  7. PLASMA DEVICE

    DOE Patents [OSTI]

    Baker, W.R.; Brathenahl, A.; Furth, H.P.

    1962-04-10

    A device for producing a confined high temperature plasma is described. In the device the concave inner surface of an outer annular electrode is disposed concentrically about and facing the convex outer face of an inner annular electrode across which electrodes a high potential is applied to produce an electric field there between. Means is provided to create a magnetic field perpendicular to the electric field and a gas is supplied at reduced pressure in the area therebetween. Upon application of the high potential, the gas between the electrodes is ionized, heated, and under the influence of the electric and magnetic fields there is produced a rotating annular plasma disk. The ionized plasma has high dielectric constant properties. The device is useful as a fast discharge rate capacitor, in controlled thermonuclear research, and other high temperature gas applications. (AEC)

  8. Multiband semiconductor compositions for photovoltaic devices

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw; Yu, Kin Man; Wu, Junqiao

    2010-05-04

    The highly mismatched alloy Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x, 0.ltoreq.y<1 and 0band of extended states located within the band gap of the Zn.sub.1-yMn.sub.yTe host. With multiple band gaps that fall within the solar energy spectrum, Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

  9. Multiband semiconductor compositions for photovoltaic devices

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw; Yu, Kin Man; Wu, Junqiao

    2012-03-06

    The highly mismatched alloy Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x, 0.ltoreq.y<1 and 0band of extended states located within the band gap of the Zn.sub.1-yMn.sub.yTe host. With multiple band gaps that fall within the solar energy spectrum, Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

  10. Cross-band broadcasting

    DOE Patents [OSTI]

    Bynum, Leo; Gramann, Mark R.; Bacon, Larry D.

    2015-06-23

    A radio communications device has a modulator that modulates each of a number of different carrier signals with the same message. A combiner combines the modulated carrier signals into a single combined output signal. A radio transmitter receives the single combined output signal and in response simultaneously transmits the modulated carrier signals over the air. Other embodiments are also described.

  11. Bridging Gaps | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Bridging Gaps Bridging Gaps Analysis to identify issues, best practices, and recommendations Implementation of modernization, infrastructure planning, and sustainability efforts Evaluation of planning practices to develop an adaptable method that considers revitalization and reuse Analysis of issues with transfers at less than fair market value and recommendations for improvement Evaluation of the Ten-Year (25-year) Site Plans for revitalization and strategic planning interests Tools to be

  12. Controllable spin-charge transport in strained graphene nanoribbon devices

    SciTech Connect (OSTI)

    Diniz, Ginetom S., E-mail: ginetom@gmail.com; Guassi, Marcos R. [Institute of Physics, University of Braslia, 70919-970, Braslia-DF (Brazil); Qu, Fanyao [Institute of Physics, University of Braslia, 70919-970, Braslia-DF (Brazil); Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2014-09-21

    We theoretically investigate the spin-charge transport in two-terminal device of graphene nanoribbons in the presence of a uniform uniaxial strain, spin-orbit coupling, exchange field, and smooth staggered potential. We show that the direction of applied strain can efficiently tune strain-strength induced oscillation of band-gap of armchair graphene nanoribbon (AGNR). It is also found that electronic conductance in both AGNR and zigzag graphene nanoribbon (ZGNR) oscillates with Rashba spin-orbit coupling akin to the Datta-Das field effect transistor. Two distinct strain response regimes of electronic conductance as function of spin-orbit couplings magnitude are found. In the regime of small strain, conductance of ZGNR presents stronger strain dependence along the longitudinal direction of strain. Whereas for high values of strain shows larger effect for the transversal direction. Furthermore, the local density of states shows that depending on the smoothness of the staggered potential, the edge states of AGNR can either emerge or be suppressed. These emerging states can be determined experimentally by either spatially scanning tunneling microscope or by scanning tunneling spectroscopy. Our findings open up new paradigms of manipulation and control of strained graphene based nanostructure for application on novel topological quantum devices.

  13. Electrochemical device

    DOE Patents [OSTI]

    Grimes, Patrick G.; Einstein, Harry; Bellows, Richard J.

    1988-01-12

    A tunnel protected electrochemical device features channels fluidically communicating between manifold, tunnels and cells. The channels are designed to provide the most efficient use of auxiliary power. The channels have a greater hydraulic pressure drop and electrical resistance than the manifold. This will provide a design with the optimum auxiliary energy requirements.

  14. Detection device

    DOE Patents [OSTI]

    Smith, Jay E.

    1984-01-01

    The present invention is directed to a detection device comprising: (1) an entrance chamber, (2) a central chamber, and (3) an exit chamber. The central chamber includes an ionizing gas, anode, and means for connecting the anode with an external power supply and pulse counter.

  15. Detection device

    DOE Patents [OSTI]

    Smith, J.E.

    1981-02-27

    The present invention is directed to a detection device comprising: (1) an entrance chamber; (2) a central chamber; and (3) an exit chamber. The central chamber includes an ionizing gas, anode, and means for connecting the anode with an external power supply and pulse counter.

  16. Broad band waveguide spectrometer

    DOE Patents [OSTI]

    Goldman, Don S. (Folsom, CA)

    1995-01-01

    A spectrometer for analyzing a sample of material utilizing a broad band source of electromagnetic radiation and a detector. The spectrometer employs a waveguide possessing an entry and an exit for the electromagnetic radiation emanating from the source. The waveguide further includes a surface between the entry and exit portions which permits interaction between the electromagnetic radiation passing through the wave guide and a sample material. A tapered portion forms a part of the entry of the wave guide and couples the electromagnetic radiation emanating from the source to the waveguide. The electromagnetic radiation passing from the exit of the waveguide is captured and directed to a detector for analysis.

  17. W-Band Sheet Beam Klystron Design

    SciTech Connect (OSTI)

    Scheitrum, G.; Caryotakis, G.; Burke, A.; Jensen, A.; Jongewaard, E.a Krasnykh, A.; Neubauer, M.; Phillips, R.; Rauenbuehler, K.; /SLAC

    2011-11-11

    Sheet beam devices provide important advantages for very high power, narrow bandwidth RF sources like accelerator klystrons [1]. Reduced current density and increased surface area result in increased power capabi1ity, reduced magnetic fields for focusing and reduced cathode loading. These advantages are offset by increased complexity, beam formation and transport issues and potential for mode competition in the ovennoded cavities and drift tube. This paper will describe the design issues encountered in developing a 100 kW peak and 2 kW average power sheet beam k1ystron at W-band including beam formation, beam transport, circuit design, circuit fabrication and mode competition.

  18. Highly Mismatched Alloys for Intermediate Band Solar Cells

    SciTech Connect (OSTI)

    Walukiewicz, W.; Yu, K.M.; Wu, J.; Ager III, J.W.; Shan, W.; Scrapulla, M.A.; Dubon, O.D.; Becla, P.

    2005-03-21

    It has long been recognized that the introduction of a narrow band of states in a semiconductor band gap could be used to achieve improved power conversion efficiency in semiconductor-based solar cells. The intermediate band would serve as a ''stepping stone'' for photons of different energy to excite electrons from the valence to the conduction band. An important advantage of this design is that it requires formation of only a single p-n junction, which is a crucial simplification in comparison to multijunction solar cells. A detailed balance analysis predicts a limiting efficiency of more than 50% for an optimized, single intermediate band solar cell. This is higher than the efficiency of an optimized two junction solar cell. Using ion beam implantation and pulsed laser melting we have synthesized Zn{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys with x<0.03. These highly mismatched alloys have a unique electronic structure with a narrow oxygen-derived intermediate band. The width and the location of the band is described by the Band Anticrossing model and can be varied by controlling the oxygen content. This provides a unique opportunity to optimize the absorption of solar photons for best solar cell performance. We have carried out systematic studies of the effects of the intermediate band on the optical and electrical properties of Zn{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys. We observe an extension of the photovoltaic response towards lower photon energies, which is a clear indication of optical transitions from the valence to the intermediate band.

  19. Laser device

    DOE Patents [OSTI]

    Scott, Jill R.; Tremblay, Paul L.

    2008-08-19

    A laser device includes a virtual source configured to aim laser energy that originates from a true source. The virtual source has a vertical rotational axis during vertical motion of the virtual source and the vertical axis passes through an exit point from which the laser energy emanates independent of virtual source position. The emanating laser energy is collinear with an orientation line. The laser device includes a virtual source manipulation mechanism that positions the virtual source. The manipulation mechanism has a center of lateral pivot approximately coincident with a lateral index and a center of vertical pivot approximately coincident with a vertical index. The vertical index and lateral index intersect at an index origin. The virtual source and manipulation mechanism auto align the orientation line through the index origin during virtual source motion.

  20. LOADING DEVICE

    DOE Patents [OSTI]

    Ohlinger, L.A.

    1958-10-01

    A device is presented for loading or charging bodies of fissionable material into a reactor. This device consists of a car, mounted on tracks, into which the fissionable materials may be placed at a remote area, transported to the reactor, and inserted without danger to the operating personnel. The car has mounted on it a heavily shielded magazine for holding a number of the radioactive bodies. The magazine is of a U-shaped configuration and is inclined to the horizontal plane, with a cap covering the elevated open end, and a remotely operated plunger at the lower, closed end. After the fissionable bodies are loaded in the magazine and transported to the reactor, the plunger inserts the body at the lower end of the magazine into the reactor, then is withdrawn, thereby allowing gravity to roll the remaining bodies into position for successive loading in a similar manner.

  1. Direct Observation of Energy-Gap Scaling Law in CdSe Quantum Dots with Positrons

    SciTech Connect (OSTI)

    Denison, Arthur Blanchard; Weber, M. H.; Lynn, K. G.; Barbiellini, B.; Sterne, P. A.

    2002-07-01

    CdSe quantum dot samples with sizes in the range of 1.8~6 nm in diameter were examined by positron annihilation spectroscopy. The results were compared to data obtained for single-crystal bulk CdSe. Evidence is provided that the positrons annihilate within the nanospheres. The annihilation line shape shows a smearing at the boundary of the Jones zone proportional to the widening of the band gap due to a reduction in the size of the quantum dots. The data confirm that the change in the band gap is inversely proportional to the square of the quantum dot diameter.

  2. Virtual gap dielectric wall accelerator

    DOE Patents [OSTI]

    Caporaso, George James; Chen, Yu-Jiuan; Nelson, Scott; Sullivan, Jim; Hawkins, Steven A

    2013-11-05

    A virtual, moving accelerating gap is formed along an insulating tube in a dielectric wall accelerator (DWA) by locally controlling the conductivity of the tube. Localized voltage concentration is thus achieved by sequential activation of a variable resistive tube or stalk down the axis of an inductive voltage adder, producing a "virtual" traveling wave along the tube. The tube conductivity can be controlled at a desired location, which can be moved at a desired rate, by light illumination, or by photoconductive switches, or by other means. As a result, an impressed voltage along the tube appears predominantly over a local region, the virtual gap. By making the length of the tube large in comparison to the virtual gap length, the effective gain of the accelerator can be made very large.

  3. Diversionary device

    DOE Patents [OSTI]

    Grubelich, Mark C.

    2001-01-01

    A diversionary device has a housing having at least one opening and containing a non-explosive propellant and a quantity of fine powder packed within the housing, with the powder being located between the propellant and the opening. When the propellant is activated, it has sufficient energy to propel the powder through the opening to produce a cloud of powder outside the housing. An igniter is also provided for igniting the cloud of powder to create a diversionary flash and bang, but at a low enough pressure to avoid injuring nearby people.

  4. Electrochromic device

    DOE Patents [OSTI]

    Schwendemanm, Irina G.; Polcyn, Adam D.; Finley, James J.; Boykin, Cheri M.; Knowles, Julianna M.

    2011-03-15

    An electrochromic device includes a first substrate spaced from a second substrate. A first conductive member is formed over at least a portion of the first substrate. A first electrochromic material is formed over at least a portion of the first conductive member. The first electrochromic material includes an organic material. A second conductive member is formed over at least a portion of the second substrate. A second electrochromic material is formed over at least a portion of the second conductive member. The second electrochromic material includes an inorganic material. An ionic liquid is positioned between the first electrochromic material and the second electrochromic material.

  5. OLED devices

    DOE Patents [OSTI]

    Sapochak, Linda Susan [Arlington, VA; Burrows, Paul Edward [Kennewick, WA; Bimalchandra, Asanga [Richland, WA

    2011-02-22

    An OLED device having an emission layer formed of an ambipolar phosphine oxide host material and a dopant, a hole transport layer in electrical communication with an anode, an electron transport layer in communication with a cathode, wherein the HOMO energy of the hole transport layer is substantially the same as the HOMO energy of the ambipolar host in the emission layer, and the LUMO energy of the electron transport layer is substantially the same as the LUMO energy of the ambipolar host in the emission layer.

  6. Multiple input electrode gap controller

    DOE Patents [OSTI]

    Hysinger, Christopher L.; Beaman, Joseph J.; Melgaard, David K.; Williamson, Rodney L.

    1999-01-01

    A method and apparatus for controlling vacuum arc remelting (VAR) furnaces by estimation of electrode gap based on a plurality of secondary estimates derived from furnace outputs. The estimation is preferably performed by Kalman filter. Adaptive gain techniques may be employed, as well as detection of process anomalies such as glows.

  7. Multiple input electrode gap controller

    DOE Patents [OSTI]

    Hysinger, C.L.; Beaman, J.J.; Melgaard, D.K.; Williamson, R.L.

    1999-07-27

    A method and apparatus for controlling vacuum arc remelting (VAR) furnaces by estimation of electrode gap based on a plurality of secondary estimates derived from furnace outputs. The estimation is preferably performed by Kalman filter. Adaptive gain techniques may be employed, as well as detection of process anomalies such as glows. 17 figs.

  8. Research on high-efficiency, multiple-gap, multijunction, amorphous-silicon-based alloy thin-film solar cells

    SciTech Connect (OSTI)

    Guha, S. )

    1989-06-01

    This report presents results of research on advancing our understanding of amorphous-silicon-based alloys and their use in small-area multijunction solar cells. The principal objectives of the program are to develop a broad scientific base for the chemical, structural, optical, and electronic properties of amorphous-silicon-based alloys; to determine the optimum properties of these alloy materials as they relate to high-efficiency cells; to determine the optimum device configuration for multijunction cells; and to demonstrate proof-of-concept, multijunction, a-Si-alloy-based solar cells with 18% efficiency under standard AM1.5 global insolation conditions and with an area of at least 1 cm{sup 2}. A major focus of the work done during this reporting period was the optimization of a novel, multiple-graded structure that enhances cell efficiency through band-gap profiling. The principles of the operation of devices incorporating such a structure, computer simulations of those, and experimental results for both single- and multijunction cells prepared by using the novel structure are discussed in detail. 14 refs., 35 figs., 7 tabs.

  9. Thermoplastic tape compaction device

    DOE Patents [OSTI]

    Campbell, Vincent W. (Oak Ridge, TN)

    1994-01-01

    A device for bonding a thermoplastic tape to a substrate to form a fully consolidated composite. This device has an endless chain associated with a frame so as to rotate in a plane that is perpendicular to a long dimension of the tape, the chain having pivotally connected chain links with each of the links carrying a flexible foot member that extends outwardly from the chain. A selected number of the foot members contact the tape, after the heating thereof, to cause the heated tape to bond to the substrate. The foot members are each a thin band of metal oriented transversely to the chain, with a flexibility and width and length to contact the tape so as to cause the tape to conform to the substrate to achieve consolidation of the tape and the substrate. A biased leaf-type spring within the frame bears against an inner surface of the chain to provide the compliant pressure necessary to bond the tape to the substrate. The chain is supported by sprockets on shafts rotatably supported in the frame and, in one embodiment, one of the shafts has a drive unit to produce rotation such that the foot members in contact with the tape move at the same speed as the tape. Cooling jets are positioned along the frame to cool the resultant consolidated composite.

  10. Thermoplastic tape compaction device

    DOE Patents [OSTI]

    Campbell, V.W.

    1994-12-27

    A device is disclosed for bonding a thermoplastic tape to a substrate to form a fully consolidated composite. This device has an endless chain associated with a frame so as to rotate in a plane that is perpendicular to a long dimension of the tape, the chain having pivotally connected chain links with each of the links carrying a flexible foot member that extends outwardly from the chain. A selected number of the foot members contact the tape, after the heating thereof, to cause the heated tape to bond to the substrate. The foot members are each a thin band of metal oriented transversely to the chain, with a flexibility and width and length to contact the tape so as to cause the tape to conform to the substrate to achieve consolidation of the tape and the substrate. A biased leaf-type spring within the frame bears against an inner surface of the chain to provide the compliant pressure necessary to bond the tape to the substrate. The chain is supported by sprockets on shafts rotatably supported in the frame and, in one embodiment, one of the shafts has a drive unit to produce rotation such that the foot members in contact with the tape move at the same speed as the tape. Cooling jets are positioned along the frame to cool the resultant consolidated composite. 5 figures.

  11. Towards reproducible, scalable lateral molecular electronic devices

    SciTech Connect (OSTI)

    Durkan, Colm Zhang, Qian

    2014-08-25

    An approach to reproducibly fabricate molecular electronic devices is presented. Lateral nanometer-scale gaps with high yield are formed in Au/Pd nanowires by a combination of electromigration and Joule-heating-induced thermomechanical stress. The resulting nanogap devices are used to measure the electrical properties of small numbers of two different molecular species with different end-groups, namely 1,4-butane dithiol and 1,5-diamino-2-methylpentane. Fluctuations in the current reveal that in the case of the dithiol molecule devices, individual molecules conduct intermittently, with the fluctuations becoming more pronounced at larger biases.

  12. Elliptically polarizing adjustable phase insertion device

    DOE Patents [OSTI]

    Carr, Roger

    1995-01-01

    An insertion device for extracting polarized electromagnetic energy from a beam of particles is disclosed. The insertion device includes four linear arrays of magnets which are aligned with the particle beam. The magnetic field strength to which the particles are subjected is adjusted by altering the relative alignment of the arrays in a direction parallel to that of the particle beam. Both the energy and polarization of the extracted energy may be varied by moving the relevant arrays parallel to the beam direction. The present invention requires a substantially simpler and more economical superstructure than insertion devices in which the magnetic field strength is altered by changing the gap between arrays of magnets.

  13. CLOSURE DEVICE

    DOE Patents [OSTI]

    Linzell, S.M.; Dorcy, D.J.

    1958-08-26

    A quick opening type of stuffing box employing two banks of rotatable shoes, each of which has a caraming action that forces a neoprene sealing surface against a pipe or rod where it passes through a wall is presented. A ring having a handle or wrench attached is placed eccentric to and between the two banks of shoes. Head bolts from the shoes fit into slots in this ring, which are so arranged that when the ring is rotated a quarter turn in one direction the shoes are thrust inwardly to cramp the neopnrene about the pipe, malting a tight seal. Moving the ring in the reverse direction moves the shoes outwardly and frees the pipe which then may be readily removed from the stuffing box. This device has particular application as a closure for the end of a coolant tube of a neutronic reactor.

  14. PLASMA DEVICE

    DOE Patents [OSTI]

    Baker, W.R.

    1961-08-22

    A device is described for establishing and maintaining a high-energy, rotational plasma for use as a fast discharge capacitor. A disc-shaped, current- conducting plasma is formed in an axinl magnetic field and a crossed electric field, thereby creating rotational kinetic enengy in the plasma. Such energy stored in the rotation of the plasma disc is substantial and is convertible tc electrical energy by generator action in an output line electrically coupled to the plasma volume. Means are then provided for discharging the electrical energy into an external circuit coupled to the output line to produce a very large pulse having an extremely rapid rise time in the waveform thereof. (AE C)

  15. Inverse Design of Mn-based ternary p-type wide-gap oxides

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ZnO is an important prototypical wide-gap oxide semiconductor. The discrepancy between band- structure theory and ARPES is removed by a correction for the Zn-d band energy in GW calculations. Significance and Impact The present approach improves the capability for property prediction and design of energy materials. Benchmarking Band-Structure Calculations Against Angular-Resolved Photoemission Spectroscopy (ARPES) for ZnO L.Y. Lim, S. Lany, Y.J. Chang, E. Rotenberg, A. Zunger, M.F. Toney,

  16. Air Gap Effects in LX-17

    SciTech Connect (OSTI)

    Souers, P C; Ault, S; Avara, R; Bahl, K L; Boat, R; Cunningham, B; Gidding, D; Janzen, J; Kuklo, D; Lee, R; Lauderbach, L; Weingart, W C; Wu, B; Winer, K

    2005-09-26

    Three experiments done over twenty years on gaps in LX-17 are reported. For the detonation front moving parallel to the gaps, jets of gas products were seen coming from the gaps at velocities greater than the detonation velocity. A case can be made that the jet velocity increased with gap thickness but the data is scattered. For the detonation front moving transverse to the gap, time delays were seen. The delays roughly increase with gap width, going from 0-70 ns at 'zero gap' to around 300 ns at 0.5-1 mm gap. Larger gaps of up to 6 mm width almost certainly stopped the detonation, but this was not proved. Real-time resolution of the parallel jets and determination of the actual re-detonation or failure in the transverse case needs to be done in future experiments.

  17. Electronic gap sensor and method

    DOE Patents [OSTI]

    Williams, Robert S.; King, Edward L.; Campbell, Steven L.

    1991-01-01

    An apparatus and method for regulating the gap between a casting nozzle and a casting wheel in which the gap between the casting nozzle and the casting wheel is monitored by means of at least one sensing element protruding from the face of the casting nozzle. The sensing element is preferably connected to a voltage source and the casting wheel grounded. When the sensing element contacts the casting wheel, an electric circuit is completed. The completion of the circuit can be registered by an indicator, and the presence or absence of a completed circuit indicates the relative position of the casting nozzle to the casting wheel. The relative positions of the casting nozzle and casting wheel can thereby be selectively adjusted to continually maintain a predetermined distance between their adjacent surfaces.

  18. Electronic gap sensor and method

    DOE Patents [OSTI]

    Williams, R.S.; King, E.L.; Campbell, S.L.

    1991-08-06

    Disclosed are an apparatus and method for regulating the gap between a casting nozzle and a casting wheel in which the gap between the casting nozzle and the casting wheel is monitored by means of at least one sensing element protruding from the face of the casting nozzle. The sensing element is preferably connected to a voltage source and the casting wheel grounded. When the sensing element contacts the casting wheel, an electric circuit is completed. The completion of the circuit can be registered by an indicator, and the presence or absence of a completed circuit indicates the relative position of the casting nozzle to the casting wheel. The relative positions of the casting nozzle and casting wheel can thereby be selectively adjusted to continually maintain a predetermined distance between their adjacent surfaces. 5 figures.

  19. Nonequilibrium Green's function formulation of intersubband absorption for nonparabolic single-band effective mass Hamiltonian

    SciTech Connect (OSTI)

    Kolek, Andrzej

    2015-05-04

    The formulas are derived that enable calculations of intersubband absorption coefficient within nonequilibrium Green's function method applied to a single-band effective-mass Hamiltonian with the energy dependent effective mass. The derivation provides also the formulas for the virtual valence band components of the two-band Green's functions which can be used for more exact estimation of the density of states and electrons and more reliable treatment of electronic transport in unipolar n-type heterostructure semiconductor devices.

  20. HIGH ENERGY GASEOUS DISCHARGE DEVICES

    DOE Patents [OSTI]

    Josephson, V.

    1960-02-16

    The high-energy electrical discharge device described comprises an envelope, a pair of main discharge electrodes supported in opposition in the envelope, and a metallic shell symmetrically disposed around and spaced from the discharge path between the electrodes. The metallic shell comprises a first element of spaced helical turns of metallic material and a second element of spaced helical turns of methllic material insulatedly supported in superposition outside the first element and with the turns overlapping the gap between the turns of the first element.

  1. Inductive storage pulse circuit device

    DOE Patents [OSTI]

    Parsons, William M.; Honig, Emanuel M.

    1984-01-01

    Inductive storage pulse circuit device which is capable of delivering a series of electrical pulses to a load in a sequential manner. Silicon controlled rectifiers as well as spark gap switches can be utilized in accordance with the present invention. A commutation switching array is utilized to produce a reverse current to turn-off the main opening switch. A commutation capacitor produces the reverse current and is initially charged to a predetermined voltage and subsequently charged in alternating directions by the inductive storage current.

  2. Intrinsic electron and hole bands in electron-doped cuprate superconductors

    SciTech Connect (OSTI)

    Xiang, T.

    2010-02-24

    We propose that the upper Hubbard band (electron-like) and the Zhang-Rice singlet band (holelike) are two essential components in describing low-energy excitations of electron-doped cuprate superconductors. We find that the gap between these two bands is significantly smaller than the charge-transfer gap measured by optics and is further reduced upon doping. This indicates that the charge fluctuation is strong and the system is in the intermediate correlation regime. A two-band model is derived. In the limit that the intraband and interband hopping integrals are equal to each other, this model is equivalent to the unconstrained t-J model with on-site Coulomb repulsions.

  3. Scheme for precise correction of orbit variation caused by dipole error field of insertion device

    SciTech Connect (OSTI)

    Nakatani, T.; Agui, A.; Aoyagi, H.; Matsushita, T.; Takao, M.; Takeuchi, M.; Yoshigoe, A.; Tanaka, H.

    2005-05-15

    We developed a scheme for precisely correcting the orbit variation caused by a dipole error field of an insertion device (ID) in a storage ring and investigated its performance. The key point for achieving the precise correction is to extract the variation of the beam orbit caused by the change of the ID error field from the observed variation. We periodically change parameters such as the gap and phase of the specified ID with a mirror-symmetric pattern over the measurement period to modulate the variation. The orbit variation is measured using conventional wide-frequency-band detectors and then the induced variation is extracted precisely through averaging and filtering procedures. Furthermore, the mirror-symmetric pattern enables us to independently extract the orbit variations caused by a static error field and by a dynamic one, e.g., an error field induced by the dynamical change of the ID gap or phase parameter. We built a time synchronization measurement system with a sampling rate of 100 Hz and applied the scheme to the correction of the orbit variation caused by the error field of an APPLE-2-type undulator installed in the SPring-8 storage ring. The result shows that the developed scheme markedly improves the correction performance and suppresses the orbit variation caused by the ID error field down to the order of submicron. This scheme is applicable not only to the correction of the orbit variation caused by a special ID, the gap or phase of which is periodically changed during an experiment, but also to the correction of the orbit variation caused by a conventional ID which is used with a fixed gap and phase.

  4. Integrated device architectures for electrochromic devices

    DOE Patents [OSTI]

    Frey, Jonathan Mack; Berland, Brian Spencer

    2015-04-21

    This disclosure describes systems and methods for creating monolithically integrated electrochromic devices which may be a flexible electrochromic device. Monolithic integration of thin film electrochromic devices may involve the electrical interconnection of multiple individual electrochromic devices through the creation of specific structures such as conductive pathway or insulating isolation trenches.

  5. Laser device

    DOE Patents [OSTI]

    Scott, Jill R.; Tremblay, Paul L.

    2007-07-10

    A laser device includes a target position, an optical component separated a distance J from the target position, and a laser energy source separated a distance H from the optical component, distance H being greater than distance J. A laser source manipulation mechanism exhibits a mechanical resolution of positioning the laser source. The mechanical resolution is less than a spatial resolution of laser energy at the target position as directed through the optical component. A vertical and a lateral index that intersect at an origin can be defined for the optical component. The manipulation mechanism can auto align laser aim through the origin during laser source motion. The laser source manipulation mechanism can include a mechanical index. The mechanical index can include a pivot point for laser source lateral motion and a reference point for laser source vertical motion. The target position can be located within an adverse environment including at least one of a high magnetic field, a vacuum system, a high pressure system, and a hazardous zone. The laser source and an electro-mechanical part of the manipulation mechanism can be located outside the adverse environment. The manipulation mechanism can include a Peaucellier linkage.

  6. Laser device

    DOE Patents [OSTI]

    Scott, Jill R.; Tremblay, Paul L.

    2004-11-23

    A laser device includes a target position, an optical component separated a distance J from the target position, and a laser energy source separated a distance H from the optical component, distance H being greater than distance J. A laser source manipulation mechanism exhibits a mechanical resolution of positioning the laser source. The mechanical resolution is less than a spatial resolution of laser energy at the target position as directed through the optical component. A vertical and a lateral index that intersect at an origin can be defined for the optical component. The manipulation mechanism can auto align laser aim through the origin during laser source motion. The laser source manipulation mechanism can include a mechanical index. The mechanical index can include a pivot point for laser source lateral motion and a reference point for laser source vertical motion. The target position can be located within an adverse environment including at least one of a high magnetic field, a vacuum system, a high pressure system, and a hazardous zone. The laser source and an electro-mechanical part of the manipulation mechanism can be located outside the adverse environment. The manipulation mechanism can include a Peaucellier linkage.

  7. Discrete monotron oscillator having one-half wavelength coaxial resonator with one-quarter wavelength gap spacing

    DOE Patents [OSTI]

    Carlsten, B.E.; Haynes, W.B.

    1998-02-03

    A discrete monotron oscillator for use in a high power microwave device is formed with a microwave oscillator having a half-wavelength resonant coaxial microwave cavity operating in fundamental TEM mode for microwave oscillation with an inner conductor defining a drift tube for propagating an electron beam and an outer conductor coaxial with the inner conductor. The inner conductor defines a modulating gap and an extraction gap downstream of the modulating gap. The modulating gap and the extraction gap connect the coaxial microwave cavity with the drift tube so that energy for the microwave oscillation is extracted from the electron beam at the extraction gap and modulates the electron beam at the modulating gap. For high power operation, an annular electron beam is used. 8 figs.

  8. Discrete monotron oscillator having one-half wavelength coaxial resonator with one-quarter wavelength gap spacing

    DOE Patents [OSTI]

    Carlsten, Bruce E.; Haynes, William B.

    1998-01-01

    A discrete monotron oscillator for use in a high power microwave device is formed with a microwave oscillator having a half-wavelength resonant coaxial microwave cavity operating in fundamental TEM mode for microwave oscillation with an inner conductor defining a drift tube for propagating an electron beam and an outer conductor coaxial with the inner conductor. The inner conductor defines a modulating gap and an extraction gap downstream of the modulating gap. The modulating gap and the extraction gap connect the coaxial microwave cavity with the drift tube so that energy for the microwave oscillation is extracted from the electron beam at the extraction gap and modulates the electron beam at the modulating gap. For high power operation, an annular electron beam is used.

  9. Closed Gap Enzen | Open Energy Information

    Open Energy Info (EERE)

    search Name: Closed Gap-Enzen Place: Bangalore, India Zip: 560 052 Product: Formed as a joint venture, Closed Gap-Enzen provides a new integrated meter enabling seamless customer...

  10. Ultra high vacuum broad band high power microwave window

    DOE Patents [OSTI]

    Nguyen-Tuong, Viet; Dylla, III, Henry Frederick

    1997-01-01

    An improved high vacuum microwave window has been developed that utilizes high density polyethylene coated on two sides with SiOx, SiNx, or a combination of the two. The resultant low dielectric and low loss tangent window creates a low outgassing, low permeation seal through which broad band, high power microwave energy may be passed. No matching device is necessary and the sealing technique is simple. The features of the window are broad band transmission, ultra-high vacuum compatibility with a simple sealing technique, low voltage standing wave ratio, high power transmission and low cost.

  11. Ultra high vacuum broad band high power microwave window

    DOE Patents [OSTI]

    Nguyen-Tuong, V.; Dylla, H.F. III

    1997-11-04

    An improved high vacuum microwave window has been developed that utilizes high density polyethylene coated on two sides with SiOx, SiNx, or a combination of the two. The resultant low dielectric and low loss tangent window creates a low outgassing, low permeation seal through which broad band, high power microwave energy may be passed. No matching device is necessary and the sealing technique is simple. The features of the window are broad band transmission, ultra-high vacuum compatibility with a simple sealing technique, low voltage standing wave ratio, high power transmission and low cost. 5 figs.

  12. Generation of full polarization in ferromagnetic graphene with spin energy gap

    SciTech Connect (OSTI)

    Wu, Qing-Ping; Liu, Zheng-Fang E-mail: aixichen@ecjtu.edu.cn; Liu, Zhi-Min; Chen, Ai-Xi E-mail: aixichen@ecjtu.edu.cn; Xiao, Xian-Bo

    2014-12-22

    We propose a workable scheme for the generation of full spin polarization in ferromagnetic graphene system with strain or Rashba spin-orbit interaction. A spin energy gap can be opened in ferromagnetic graphene system in the presence of strain or Rashba spin-orbit interaction, leading to the full polarization in the spin energy gap. In addition, under the combined modulation of strain and Rashba spin-orbit interaction, the ferromagnetic graphene system can generate significantly large spin-polarized current with a full polarization in the spin energy gap. It is anticipated to apply such a phenomenon to design the electron spin devices based on the graphene.

  13. Calibration curves for some standard Gap Tests

    SciTech Connect (OSTI)

    Bowman, A.L.; Sommer, S.C.

    1989-01-01

    The relative shock sensitivities of explosive compositions are commonly assessed using a family of experiments that can be described by the generic term ''Gap Test.'' Gap tests include a donor charge, a test sample, and a spacer, or gap, between two explosives charges. The donor charge, gap material, and test dimensions are held constant within each different version of the gap test. The thickness of the gap is then varied to find the value at which 50% of the test samples will detonate. The gap tests measure the ease with a high-order detonation can be established in the test explosive, or the ''detonability,'' of the explosive. Test results are best reported in terms of the gap thickness at the 50% point. It is also useful to define the shock pressure transmitted into the test sample at the detonation threshold. This requires calibrating the gap test in terms of shock pressure in the gap as a function of the gap thickness. It also requires a knowledge of the shock Hugoniot of the sample explosive. We used the 2DE reactive hydrodynamic code with Forest Fire burn rates for the donor explosives to calculate calibration curves for several gap tests. The model calculations give pressure and particle velocity on the centerline of the experimental set-up and provide information about the curvature and pulse width of the shock wave. 10 refs., 1 fig.

  14. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on 1D metals has been enriched by the synthesis of quite novel materials, of which carbon nanotubes and metallic atomic wires on surfaces are recent examples. Atomic structure...

  15. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    a silicon surface comprises an ideal test laboratory for studying one-dimensional (1D) metals. A new example comes from a collaboration between researchers from Yonsei University...

  16. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic structure models of indium wires four rows wide running from left to right on silicon. Top: The metallic 41 phase. Bottom: The period-doubled 42 insulating phase....

  17. Final Report: Laser-Material Interactions Relevant to Analytic Spectroscopy of Wide Band Gap Materials

    SciTech Connect (OSTI)

    Dickinson, J. T.

    2014-04-05

    We summarize our studies aimed at developing an understanding of the underlying physics and chemistry in terms of laser materials interactions relevant to laser-based sampling and chemical analysis of wide bandgap materials. This work focused on the determination of mechanisms for the emission of electrons, ions, atoms, and molecules from laser irradiation of surfaces. We determined the important role of defects on these emissions, the thermal, chemical, and physical interactions responsible for matrix effects and mass-dependent transport/detection. This work supported development of new techniques and technology for the determination of trace elements contained such as nuclear waste materials.

  18. Second harmonic generation from direct band gap quantum dots pumped by femtosecond laser pulses

    SciTech Connect (OSTI)

    Liu, Liwei Wang, Yue; Hu, Siyi; Ren, Yu; Huang, Chen

    2014-02-21

    We report on nonlinear optical experiments performed on Cu{sub 2}S quantum dots (QDs) pumped by femtosecond laser pulses. We conduct a theoretical simulation and experiments to determine their second harmonic generation characteristics. Furthermore, we demonstrate that the QDs have a second harmonic generation conversion efficiency of up to 76%. Our studies suggest that these Cu{sub 2}S QDs can be used for solar cells, bioimaging, biosensing, and electric detection.

  19. Final Report: Tunable Narrow Band Gap Absorbers For Ultra High Efficiency Solar Cells

    SciTech Connect (OSTI)

    Bedair, Salah M.; Hauser, John R.; Elmasry, Nadia; Colter, Peter C.; Bradshaw, G.; Carlin, C. Z.; Samberg, J.; Edmonson, Kenneth

    2012-07-31

    We report on a joint research program between NCSU and Spectrolab to develop an upright multijunction solar cell structure with a potential efficiency exceeding the current record of 41.6% reported by Spectrolab. The record efficiency Ge/GaAs/InGaP triple junction cell structure is handicapped by the fact that the current generated by the Ge cell is much higher than that of both the middle and top cells. We carried out a modification of the record cell structure that will keep the lattice matched condition and allow better matching of the current generated by each cell. We used the concept of strain balanced strained layer superlattices (SLS), inserted in the i-layer, to reduce the bandgap of the middle cell without violating the desirable lattice matched condition. For the middle GaAs cell, we have demonstrated an n-GaAs/i-(InGaAs/GaAsP)/p-GaAs structure, where the InxGa1-xAs/GaAs1-yPy SLS is grown lattice matched to GaAs and with reduced bandgap from 1.43 eV to 1.2 eV, depending upon the values of x and y.

  20. Profile of single-pulsed ion beams in acceleration gap

    SciTech Connect (OSTI)

    Xiang, W.; Tang, P.Y.

    2006-03-15

    In an attempt to understand the characteristics of single-pulsed ion beams extracted from a miniature occluded-gas sources with electrodes of metallic hydride, a two-dimensional (2D) projected image of ion beams extracted from the single-pulsed occluded-gas source was captured using a digital charge-coupled device camera on a test bench. Based on image processing and the inverse Abel transform, the 2D integrally projected image with cylindrical symmetry was used to determine the profile of ion beams in the acceleration gap. The result shows that the radial beam profile in acceleration gap has a Gaussian-like shape, and the maximum beam intensity behind the plasma electrode is about 40% higher than that in front of the extraction electrode.

  1. Intermediate band solar cells: Recent progress and future directions

    SciTech Connect (OSTI)

    Okada, Y. Tamaki, R.; Farrell, D. J.; Yoshida, K.; Ahsan, N.; Shoji, Y.; Sogabe, T.; Ekins-Daukes, N. J. Yoshida, M.; Pusch, A.; Hess, O.; Phillips, C. C.; Kita, T.; Guillemoles, J.-F.

    2015-06-15

    Extensive literature and publications on intermediate band solar cells (IBSCs) are reviewed. A detailed discussion is given on the thermodynamics of solar energy conversion in IBSCs, the device physics, and the carrier dynamics processes with a particular emphasis on the two-step inter-subband absorption/recombination processes that are of paramount importance in a successful implementation high-efficiency IBSC. The experimental solar cell performance is further discussed, which has been recently demonstrated by using highly mismatched alloys and high-density quantum dot arrays and superlattice. IBSCs having widely different structures, materials, and spectral responses are also covered, as is the optimization of device parameters to achieve maximum performance.

  2. Evidence of Eu{sup 2+} 4f electrons in the valence band spectra of EuTiO{sub 3} and EuZrO{sub 3}

    SciTech Connect (OSTI)

    Kolodiazhnyi, T.; Valant, M.; Williams, J. R.; Bugnet, M.; Botton, G. A.; Ohashi, N.; Sakka, Y.

    2012-10-15

    We report on optical band gap and valence electronic structure of two Eu{sup 2+}-based perovskites, EuTiO{sub 3} and EuZrO{sub 3} as revealed by diffuse optical scattering, electron energy loss spectroscopy, and valence-band x-ray photoelectron spectroscopy. The data show good agreement with the first-principles studies in which the top of the valence band structure is formed by the narrow Eu 4f{sup 7} electron band. The O 2p band shows the features similar to those of the Ba(Sr)TiO{sub 3} perovskites except that it is shifted to higher binding energies. Appearance of the Eu{sup 2+} 4f{sup 7} band is a reason for narrowing of the optical band gap in the title compounds as compared to their Sr-based analogues.

  3. Connector device for building integrated photovoltaic device

    DOE Patents [OSTI]

    Keenihan, James R.; Langmaid, Joe A.; Eurich, Gerald K.; Lesniak, Michael J.; Mazor, Michael H.; Cleerman, Robert J.; Gaston, Ryan S.

    2015-11-10

    The present invention is premised upon a connector device and method that can more easily electrically connect a plurality of PV devices or photovoltaic system components and/or locate these devices/components upon a building structure. It also may optionally provide some additional sub-components (e.g. at least one bypass diode and/or an indicator means) and may enhance the serviceability of the device.

  4. Connector device for building integrated photovoltaic device

    DOE Patents [OSTI]

    Keenihan, James R.; Langmaid, Joseph A.; Eurich, Gerald K.; Lesniak, Michael J.; Mazor, Michael H.; Cleereman, Robert J.; Gaston, Ryan S.

    2014-06-03

    The present invention is premised upon a connector device and method that can more easily electrically connect a plurality of PV devices or photovoltaic system components and/or locate these devices/components upon a building structure. It also may optionally provide some additional sub-components (e.g. at least one bypass diode and/or an indicator means) and may enhance the serviceability of the device.

  5. Robotic end gripper with a band member to engage object

    DOE Patents [OSTI]

    Pollard, Roy E.; Robinson, Samuel C.; Thompson, William F.; Couture, Scott A.; Sutton, Bill J.

    1994-01-01

    An end effector for use with robotic arms and like devices that utilizes a flexible band to draw an object against an anvil having a concave surface. One typical convex surface is created by a V-block, with an apex of the V being centrally located. If an object to be grasped is fragile, the contour of the concave surface closely matches the surface of the object. Typically the movement of the band is effected by a linear actuator, with the anvil remaining fixed relative to a support base. Several embodiments are described that utilize variations in drawing the band toward the anvil, with one of these embodiments described in detail in the form of a fabricated unit. One embodiment includes a cover element that can be moved over an object after the grasping thereof, with this cover potentially serving various functions. Movement of the cover can be effected with a second linear actuator.

  6. Robotic end gripper with a band member to engage object

    DOE Patents [OSTI]

    Pollard, R.E.; Robinson, S.C.; Thompson, W.F.; Couture, S.A.; Sutton, B.J.

    1994-05-10

    An end effector for use with robotic arms and like devices is described that utilizes a flexible band to draw an object against an anvil having a concave surface. One typical convex surface is created by a V-block, with an apex of the V being centrally located. If an object to be grasped is fragile, the contour of the concave surface closely matches the surface of the object. Typically the movement of the band is effected by a linear actuator, with the anvil remaining fixed relative to a support base. Several embodiments are described that utilize variations in drawing the band toward the anvil, with one of these embodiments described in detail in the form of a fabricated unit. One embodiment includes a cover element that can be moved over an object after the grasping thereof, with this cover potentially serving various functions. Movement of the cover can be effected with a second linear actuator. 8 figures.

  7. Evidence of ion intercalation mediated band structure modification and opto-ionic coupling in lithium niobite

    SciTech Connect (OSTI)

    Shank, Joshua C.; Tellekamp, M. Brooks; Doolittle, W. Alan

    2015-01-21

    The theoretically suggested band structure of the novel p-type semiconductor lithium niobite (LiNbO{sub 2}), the direct coupling of photons to ion motion, and optically induced band structure modifications are investigated by temperature dependent photoluminescence. LiNbO{sub 2} has previously been used as a memristor material but is shown here to be useful as a sensor owing to the electrical, optical, and chemical ease of lithium removal and insertion. Despite the high concentration of vacancies present in lithium niobite due to the intentional removal of lithium atoms, strong photoluminescence spectra are observed even at room temperature that experimentally confirm the suggested band structure implying transitions from a flat conduction band to a degenerate valence band. Removal of small amounts of lithium significantly modifies the photoluminescence spectra including additional larger than stoichiometric-band gap features. Sufficient removal of lithium results in the elimination of the photoluminescence response supporting the predicted transition from a direct to indirect band gap semiconductor. In addition, non-thermal coupling between the incident laser and lithium ions is observed and results in modulation of the electrical impedance.

  8. Stability of S and Se induced reconstructions on GaP(001)(21) surface

    SciTech Connect (OSTI)

    Li , D. F.; Guo, Zhi C.; Xiao, Hai Yan; Zu, Xiaotao T.; Gao, Fei

    2010-10-15

    The structural and electronic properties of S- and Se- passivated GaP(001)(21) surfaces were studied using first-principles simulations. Our calculations showed that the most stable structure consists of a single chalcogen atom (S or Se) in the first crystal layer, which is bonded to two Ga atoms of the second layer, and the third P layer replaced by chalcogen atoms, similar to the passivation of GaAs(001)(21) surface by chalcogen atoms. The structural parameters were determined and the surface band characters and the local density of states were also analyzed. The results showed that the preferable structure has no surface states in the bulk band gap, but the energy band gaps of the S- and Se-adsorbed GaP(001) surfaces are 1.83eV and 1.63eV, respectively. The passivation effects for the S- and Se-adsorbed surfaces are similar to each other.

  9. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2012-07-31

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  10. Dilute group III-V nitride intermediate band solar cells with contact blocking layers

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2015-02-24

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  11. The effect of spin-orbit coupling in band structure of few-layer graphene

    SciTech Connect (OSTI)

    Sahdan, Muhammad Fauzi Darma, Yudi

    2014-03-24

    Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducting states on their edge or surface. This can be happened due to spin-orbit coupling and time-reversal symmetry. Moreover, the edge current flows through their edge or surface depends on its spin orientation and also it is robust against non-magnetic impurities. Therefore, topological insulators are predicted to be useful ranging from spintronics to quantum computation. Graphene was first predicted to be the precursor of topological insulator by Kane-Mele. They developed a Hamiltonian model to describe the gap opening in graphene. In this work, we investigate the band structure of few-layer graphene by using this model with analytical approach. The results of our calculations show that the gap opening occurs at K and K’ point, not only in single layer, but also in bilayer and trilayer graphene.

  12. Gap solitons in rocking optical lattices and waveguides with undulating gratings

    SciTech Connect (OSTI)

    Mayteevarunyoo, Thawatchai; Malomed, Boris A.

    2009-07-15

    We report results of a systematic analysis of the stability of one-dimensional solitons in a model including the self-repulsive or attractive cubic nonlinearity and a linear potential represented by a periodically shaking lattice, which was recently implemented in experiments with Bose-Einstein condensates. In optics, the same model applies to undulated waveguiding arrays, which are also available to the experiment. In the case of the repulsive nonlinearity, stability regions are presented, in relevant parameter planes, for fundamental gap solitons and their two-peak and three-peak bound complexes, in the first and second finite band gaps. In the model with the attractive nonlinearity, stability regions are produced for fundamental solitons and their bound states populating the semi-infinite gap. In the first finite and semi-infinite gaps, unstable solitons gradually decay into radiation, while, in the second finite band gap, they are transformed into more complex states, which may represent new species of solitons. For a large amplitude of the rocking-lattice drive, the model is tantamount to that with a 'flashing' lattice potential, which is controlled by periodic sequences of instantaneous kicks. Using this correspondence, we explain generic features of the stability diagrams for the solitons. We also derive a limit case of the latter system, in the form of coupled-mode equations with a 'flashing' linear coupling.

  13. CONTROL LIMITER DEVICE

    DOE Patents [OSTI]

    DeShong, J.A.

    1960-03-01

    A control-limiting device for monltoring a control system is described. The system comprises a conditionsensing device, a condition-varying device exerting a control over the condition, and a control means to actuate the condition-varying device. A control-limiting device integrates the total movement or other change of the condition-varying device over any interval of time during a continuum of overlapping periods of time, and if the tothl movement or change of the condition-varying device exceeds a preset value, the control- limiting device will switch the control of the operated apparatus from automatic to manual control.

  14. Gap Assessment (FY 13 Update)

    SciTech Connect (OSTI)

    Getman, Dan

    2013-09-30

    To help guide its future data collection efforts, The DOE GTO funded a data gap analysis in FY2012 to identify high potential hydrothermal areas where critical data are needed. This analysis was updated in FY2013 and the resulting datasets are represented by this metadata. The original process was published in FY 2012 and is available here: https://pangea.stanford.edu/ERE/db/GeoConf/papers/SGW/2013/Esposito.pdf Though there are many types of data that can be used for hydrothermal exploration, five types of exploration data were targeted for this analysis. These data types were selected for their regional reconnaissance potential, and include many of the primary exploration techniques currently used by the geothermal industry. The data types include: 1. well data 2. geologic maps 3. fault maps 4. geochemistry data 5. geophysical data To determine data coverage, metadata for exploration data (including data type, data status, and coverage information) were collected and catalogued from nodes on the National Geothermal Data System (NGDS). It is the intention of this analysis that the data be updated from this source in a semi-automated fashion as new datasets are added to the NGDS nodes. In addition to this upload, an online tool was developed to allow all geothermal data providers to access this assessment and to directly add metadata themselves and view the results of the analysis via maps of data coverage in Geothermal Prospector (http://maps.nrel.gov/gt_prospector). A grid of the contiguous U.S. was created with 88,000 10-km by 10-km grid cells, and each cell was populated with the status of data availability corresponding to the five data types. Using these five data coverage maps and the USGS Resource Potential Map, sites were identified for future data collection efforts. These sites signify both that the USGS has indicated high favorability of occurrence of geothermal resources and that data gaps exist. The uploaded data are contained in two data files for each data category. The first file contains the grid and is in the SHP file format (shape file.) Each populated grid cell represents a 10k area within which data is known to exist. The second file is a CSV (comma separated value) file that contains all of the individual layers that intersected with the grid. This CSV can be joined with the map to retrieve a list of datasets that are available at any given site. The attributes in the CSV include: 1. grid_id : The id of the grid cell that the data intersects with 2. title: This represents the name of the WFS service that intersected with this grid cell 3. abstract: This represents the description of the WFS service that intersected with this grid cell 4. gap_type: This represents the category of data availability that these data fall within. As the current processing is pulling data from NGDS, this category universally represents data that are available in the NGDS and are ready for acquisition for analytic purposes. 5. proprietary_type: Whether the data are considered proprietary 6. service_type: The type of service 7. base_url: The service URL

  15. Radiation response analysis of wide-gap p-AlInGaP for superhigh-efficiency space photovoltaics

    SciTech Connect (OSTI)

    Khan, Aurangzeb; Marupaduga, S.; Anandakrishnan, S.S.; Alam, M.; Ekins-Daukes, N.J.; Lee, H.S.; Sasaki, T.; Yamaguchi, M.; Takamoto, T.; Agui, T.; Kamimura, K.; Kaneiwa, M.; Imazumi, M.

    2004-11-29

    We present here the direct observation of the majority and minority carrier defects generation from wide-band-gap (2.04 eV) and thick (2 {mu}m) p-AlInGaP diodes and solar cells structures before and after 1 MeV electron irradiation by deep level transient spectroscopy (DLTS). One dominant hole-emitting trap H1 (E{sub V}+0.37{+-}0.05 eV) and two electron-emitting traps, E1 (E{sub C}-0.22{+-}0.04 eV) and E3 (E{sub C}-0.78{+-}0.05 eV) have been observed in the temperature range, which we could scan by DLTS. Detailed analysis of the minority carrier injection annealing experiment reveals that the H1 center has shown the same annealing characteristics, which has been previously observed in all phosphide-based materials such as InP, InGaP, and InGaAsP. The annealing property of the radiation-induced defects in p-AlInGaP reveals that multijunction solar cells and other optoelectronic devices such as light-emitting diodes based on this material could be considerably better to Si and GaAs in a radiation environment.

  16. Gap between active and passive solar heating

    SciTech Connect (OSTI)

    Balcomb, J.D.

    1985-01-01

    The gap between active and passive solar could hardly be wider. The reasons for this are discussed and advantages to narrowing the gap are analyzed. Ten years of experience in both active and passive systems are reviewed, including costs, frequent problems, performance prediction, performance modeling, monitoring, and cooling concerns. Trends are analyzed, both for solar space heating and for service water heating. A tendency for the active and passive technologies to be converging is observed. Several recommendations for narrowing the gap are presented.

  17. FAQS Gap Analysis Qualification Card Emergency Management

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  18. FAQS Gap Analysis Qualification Card- Quality Assurance

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  19. Hydrothermal Exploration Data Gap Analysis Update

    Broader source: Energy.gov [DOE]

    Hydrothermal Exploration Data Gap Analysis presentation by Kate Young, Dan Getman, and Ariel Esposito at the 2012 Peer Review Meeting on May 10, 2012

  20. Resistive band for turbomachine blade

    DOE Patents [OSTI]

    Roberts, Herbert Chidsey; Taxacher, Glenn Curtis

    2015-08-25

    A turbomachine system includes a rotor that defines a longitudinal axis of the turbomachine system. A first blade is coupled to the rotor, and the first blade has first and second laminated plies. A first band is coupled to the first blade and is configured to resist separation of the first and second laminated plies.

  1. FAQS Gap Analysis Qualification Card - Occupational Safety | Department

    Energy Savers [EERE]

    of Energy Occupational Safety FAQS Gap Analysis Qualification Card - Occupational Safety Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard. File Occupational Safety Gap Analysis Qualification Card More Documents & Publications FAQS Gap Analysis Qualification Card - Environmental Restoration FAQS Gap Analysis Qualification Card - Waste Management FAQS Gap Analysis Qualification Card -

  2. Drop short control of electrode gap

    DOE Patents [OSTI]

    Fisher, Robert W.; Maroone, James P.; Tipping, Donald W.; Zanner, Frank J.

    1986-01-01

    During vacuum consumable arc remelting the electrode gap between a consumable electrode and a pool of molten metal is difficult to control. The present invention monitors drop shorts by detecting a decrease in the voltage between the consumable electrode and molten pool. The drop shorts and their associated voltage reductions occur as repetitive pulses which are closely correlated to the electrode gap. Thus, the method and apparatus of the present invention controls electrode gap based upon drop shorts detected from the monitored anode-cathode voltage. The number of drop shorts are accumulated, and each time the number of drop shorts reach a predetermined number, the average period between drop shorts is calculated from this predetermined number and the time in which this number is accumulated. This average drop short period is used in a drop short period electrode gap model which determines the actual electrode gap from the drop short. The actual electrode gap is then compared with a desired electrode gap which is selected to produce optimum operating conditions and the velocity of the consumable error is varied based upon the gap error. The consumable electrode is driven according to any prior art system at this velocity. In the preferred embodiment, a microprocessor system is utilized to perform the necessary calculations and further to monitor the duration of each drop short. If any drop short exceeds a preset duration period, the consumable electrode is rapidly retracted a predetermined distance to prevent bonding of the consumable electrode to the molten remelt.

  3. Gas mixtures for spark gap closing switches

    DOE Patents [OSTI]

    Christophorou, Loucas G.; McCorkle, Dennis L.; Hunter, Scott R.

    1988-01-01

    Gas mixtures for use in spark gap closing switches comprised of fluorocarbons and low molecular weight, inert buffer gases. To this can be added a third gas having a low ionization potential relative to the buffer gas. The gas mixtures presented possess properties that optimized the efficiency spark gap closing switches.

  4. Gas mixtures for spark gap closing switches

    DOE Patents [OSTI]

    Christophorou, L.G.; McCorkle, D.L.; Hunter, S.R.

    1987-02-20

    Gas mixtures for use in spark gap closing switches comprised of fluorocarbons and low molecular weight, inert buffer gases. To this can be added a third gas having a low ionization potential relative to the buffer gas. The gas mixtures presented possess properties that optimized the efficiency spark gap closing switches. 6 figs.

  5. ELECTRICAL PROTECTIVE DEVICE

    DOE Patents [OSTI]

    Baker, W.R.

    1958-05-01

    A protective system for high-energy resonant cavities is described. It is particularly directed to the discharging of resonant cavities for preventing energy back flow through associated equipment as a result of faults. The invention in general provides means defining a spark gap communicating with the interior of a cavity or waveguide adapted for high-power energization or an evacuated chamber containing an electrode having a large power differential from the wall or other electrode. A control or trigger circuit is connected between a power supply energizing the cavity and the spark gap whereby reverse current flow in the power supply circuit instantaneously triggers the spark gap to initiate discharge within the cavity, whereupon cavity energy discharges across the gap, or with an electrode present the electrode discharges to one of the spark gap elements.

  6. Microfabricated bulk wave acoustic bandgap device

    DOE Patents [OSTI]

    Olsson, Roy H.; El-Kady, Ihab F.; McCormick, Frederick; Fleming, James G.; Fleming, Carol

    2010-06-08

    A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

  7. Microfabricated bulk wave acoustic bandgap device

    DOE Patents [OSTI]

    Olsson, Roy H.; El-Kady, Ihab F.; McCormick, Frederick; Fleming, James G.; Fleming, legal representative, Carol

    2010-11-23

    A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

  8. Elliptically polarizing adjustable phase insertion device

    DOE Patents [OSTI]

    Carr, R.

    1995-01-17

    An insertion device for extracting polarized electromagnetic energy from a beam of particles is disclosed. The insertion device includes four linear arrays of magnets which are aligned with the particle beam. The magnetic field strength to which the particles are subjected is adjusted by altering the relative alignment of the arrays in a direction parallel to that of the particle beam. Both the energy and polarization of the extracted energy may be varied by moving the relevant arrays parallel to the beam direction. The present invention requires a substantially simpler and more economical superstructure than insertion devices in which the magnetic field strength is altered by changing the gap between arrays of magnets. 3 figures.

  9. Axial flow heat exchanger devices and methods for heat transfer using axial flow devices

    DOE Patents [OSTI]

    Koplow, Jeffrey P.

    2016-02-16

    Systems and methods described herein are directed to rotary heat exchangers configured to transfer heat to a heat transfer medium flowing in substantially axial direction within the heat exchangers. Exemplary heat exchangers include a heat conducting structure which is configured to be in thermal contact with a thermal load or a thermal sink, and a heat transfer structure rotatably coupled to the heat conducting structure to form a gap region between the heat conducting structure and the heat transfer structure, the heat transfer structure being configured to rotate during operation of the device. In example devices heat may be transferred across the gap region from a heated axial flow of the heat transfer medium to a cool stationary heat conducting structure, or from a heated stationary conducting structure to a cool axial flow of the heat transfer medium.

  10. Extended investigation of superdeformed bands in {sup 151,152}Tb nuclei

    SciTech Connect (OSTI)

    Robin, J.; Byrski, Th.; Duchene, G.; Beck, F. A.; Curien, D.; Dubray, N.; Dudek, J.; Courtin, S.; Dorvaux, O.; France, G. de; Gall, B.; Joshi, P.; Nourredine, A.; Pachoud, E.; Piqueras, I.; Vivien, J. P.; Gozdz, A.; Odahara, A.; Schunck, N.; Adimi, N.

    2008-01-15

    A detailed study of known and new SD bands in Tb isotopes has been performed with the use of the EUROBALL IV {gamma}-ray array. The high-statistics data set has allowed for the extension of known SD bands at low and high spins by new {gamma}-ray transitions. These transitions, as it turns out, correspond to the rotational frequencies where the principal superdeformed gaps (Z=66,N=86) close giving rise to up- or down-bending mechanisms. This enables to attribute the underlying theoretical configurations with much higher confidence as compared to the previous identifications. Five new SD bands have been discovered, three of them assigned to the {sup 152}Tb and the two others to the {sup 151}Tb nuclei. Nuclear mean-field calculations have been used to interpret the structure of known SD bands as well as of the new ones in terms of nucleonic configurations.

  11. Engine piston having an insulating air gap

    DOE Patents [OSTI]

    Jarrett, Mark Wayne; Hunold,Brent Michael

    2010-02-02

    A piston for an internal combustion engine has an upper crown with a top and a bottom surface, and a lower crown with a top and a bottom surface. The upper crown and the lower crown are fixedly attached to each other using welds, with the bottom surface of the upper crown and the top surface of the lower crown forming a mating surface. The piston also has at least one centrally located air gap formed on the mating surface. The air gap is sealed to prevent substantial airflow into or out of the air gap.

  12. Pulse detecting device

    DOE Patents [OSTI]

    Riggan, W.C.

    1984-01-01

    A device for measuring particle flux comprises first and second photodiode detectors for receiving flux from a source and first and second outputs for producing first and second signals representing the flux incident to the detectors. The device is capable of reducing the first output signal by a portion of the second output signal, thereby enhancing the accuracy of the device. Devices in accordance with the invention may measure distinct components of flux from a single source or fluxes from several sources.

  13. Pulse flux measuring device

    DOE Patents [OSTI]

    Riggan, William C.

    1985-01-01

    A device for measuring particle flux comprises first and second photodiode detectors for receiving flux from a source and first and second outputs for producing first and second signals representing the flux incident to the detectors. The device is capable of reducing the first output signal by a portion of the second output signal, thereby enhancing the accuracy of the device. Devices in accordance with the invention may measure distinct components of flux from a single source or fluxes from several sources.

  14. Mid-Gap Electronic States in Zn1 xMnxO

    SciTech Connect (OSTI)

    Johnson, Claire A.; Kittilstved, Kevin R.; Kaspar, Tiffany C.; Droubay, Timothy C.; Chambers, Scott A.; Salley, G. Mackay; Gamelin, Daniel R.

    2010-09-02

    Electronic absorption, magnetic circular dichroism, photoconductivity, and valence-band X-ray photoelectron (XPS) spectroscopic measurements were performed on epitaxial Zn1 xMnxO films to investigate the origin of the new mid-gap band that appears upon introduction of Mn2+ into the ZnO lattice. Absorption and MCD spectroscopies reveal Mn2+-related intensity at energies below the first excitonic transition of ZnO, tailing well into the visible energy region, with an onset at ~2.2 eV. Photoconductivity measurements show that excitation into this visible band generates mobile charge carriers, consistent with assignment as a Mn2+/3+ photoionization transition. XPS measurements reveal the presence of occupied Mn2+ levels just above the valence-band edge, supporting this assignment. Magnetic circular dichroism measurements additionally show a change in sign and large increase in magnitude of the excitonic Zeeman splitting in Zn1 xMnxO relative to ZnO, suggesting that sp-d exchange in Zn1 xMnxO is not as qualitatively different from those in other II-VI diluted magnetic semiconductors as has been suggested. The singular electronic structure feature of Zn1 xMnxO is its Mn2+/3+ ionization level within the gap, and the influence of this level on other physical properties of Zn1 xMnxO is discussed.

  15. Diffraction limited focusing and routing of gap plasmons by a

    Office of Scientific and Technical Information (OSTI)

    Nanoscale Science and Technology. 42 ENGINEERING electro-optical devices; integrated optics devices; optical microelectromechanical devices; plasmonics; nanophotonics and...

  16. Organic photosensitive devices

    DOE Patents [OSTI]

    Rand, Barry P; Forrest, Stephen R

    2013-11-26

    The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photosensitive optoelectronic devices having a photoactive organic region containing encapsulated nanoparticles that exhibit plasmon resonances. An enhancement of the incident optical field is achieved via surface plasmon polariton resonances. This enhancement increases the absorption of incident light, leading to a more efficient device.

  17. Amorphous silicon photovoltaic devices

    DOE Patents [OSTI]

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  18. Photovoltaic device and method

    DOE Patents [OSTI]

    Cleereman, Robert J; Lesniak, Michael J; Keenihan, James R; Langmaid, Joe A; Gaston, Ryan; Eurich, Gerald K; Boven, Michelle L

    2015-01-27

    The present invention is premised upon an improved photovoltaic device ("PVD") and method of use, more particularly to an improved photovoltaic device with an integral locator and electrical terminal mechanism for transferring current to or from the improved photovoltaic device and the use as a system.

  19. Photovoltaic device and method

    DOE Patents [OSTI]

    Cleereman, Robert; Lesniak, Michael J.; Keenihan, James R.; Langmaid, Joe A.; Gaston, Ryan; Eurich, Gerald K.; Boven, Michelle L.

    2015-11-24

    The present invention is premised upon an improved photovoltaic device ("PVD") and method of use, more particularly to an improved photovoltaic device with an integral locator and electrical terminal mechanism for transferring current to or from the improved photovoltaic device and the use as a system.

  20. Articulating feedstock delivery device

    DOE Patents [OSTI]

    Jordan, Kevin

    2013-11-05

    A fully articulable feedstock delivery device that is designed to operate at pressure and temperature extremes. The device incorporates an articulating ball assembly which allows for more accurate delivery of the feedstock to a target location. The device is suitable for a variety of applications including, but not limited to, delivery of feedstock to a high-pressure reaction chamber or process zone.

  1. Campo Band of Mission Indians- 2010 Project

    Broader source: Energy.gov [DOE]

    The Campo Band of Mission Indians ("Band") goal is to develop a 300 MW wind energy project ("Kumeyaay Wind II") in two phases over the next two to five years.

  2. Columbia River Component Data Gap Analysis

    SciTech Connect (OSTI)

    L. C. Hulstrom

    2007-10-23

    This Data Gap Analysis report documents the results of a study conducted by Washington Closure Hanford (WCH) to compile and reivew the currently available surface water and sediment data for the Columbia River near and downstream of the Hanford Site. This Data Gap Analysis study was conducted to review the adequacy of the existing surface water and sediment data set from the Columbia River, with specific reference to the use of the data in future site characterization and screening level risk assessments.

  3. Gap between jets at the LHC

    SciTech Connect (OSTI)

    Royon, Christophe

    2013-04-15

    We describe a NLL BFKL calculation implemented in the HERWIG MC of the gap between jets cross section, that represent a test of BFKL dynamics. We compare the predictions with recent measurements at the Tevatron and present predictions for the LHC. We also discuss the interesting process of looking for gap between jets in diffractive events when protons are detected in the ATLAS Forward Physics (AFP) detectors.

  4. Active terahertz metamaterial devices

    DOE Patents [OSTI]

    Chen, Houtong; Padilla, Willie John; Averitt, Richard Douglas; O'Hara, John F.; Lee, Mark

    2010-11-02

    Metamaterial structures are taught which provide for the modulation of terahertz frequency signals. Each element within an array of metamaterial (MM) elements comprises multiple loops and at least one gap. The MM elements may comprise resonators with conductive loops and insulated gaps, or the inverse in which insulated loops are present with conductive gaps; each providing useful transmissive control properties. The metamaterial elements are fabricated on a semiconducting substrate configured with a means of enhancing or depleting electrons from near the gaps of the MM elements. An on to off transmissivity ratio of about 0.5 is achieved with this approach. Embodiments are described in which the MM elements incorporated within a Quantum Cascade Laser (QCL) to provide surface emitting (SE) properties.

  5. Unitary lens semiconductor device

    DOE Patents [OSTI]

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  6. Unitary lens semiconductor device

    DOE Patents [OSTI]

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  7. Portable data collection device

    DOE Patents [OSTI]

    French, Patrick D.

    1996-01-01

    The present invention provides a portable data collection device that has a variety of sensors that are interchangeable with a variety of input ports in the device. The various sensors include a data identification feature that provides information to the device regarding the type of physical data produced by each sensor and therefore the type of sensor itself. The data identification feature enables the device to locate the input port where the sensor is connected and self adjust when a sensor is removed or replaced. The device is able to collect physical data, whether or not a function of a time.

  8. Portable data collection device

    DOE Patents [OSTI]

    French, P.D.

    1996-06-11

    The present invention provides a portable data collection device that has a variety of sensors that are interchangeable with a variety of input ports in the device. The various sensors include a data identification feature that provides information to the device regarding the type of physical data produced by each sensor and therefore the type of sensor itself. The data identification feature enables the device to locate the input port where the sensor is connected and self adjust when a sensor is removed or replaced. The device is able to collect physical data, whether or not a function of a time. 7 figs.

  9. Electronic band structure and Kondo coupling in YbRh2Si2

    SciTech Connect (OSTI)

    Wigger, G.A.

    2010-04-15

    The electronic band structure of YbRh2Si2 is calculated in a relativistic framework including correlation corrections and magnetization of the Yb ion and compared to detailed angle-resolved photoemission spectra. The photoemission spectra for LuRh2Si2 are used as reference to identify electronic bands with no f symmetry. The calculated band structure manifests a 4f13 spin-polarized configuration leaving the unoccupied state at 1.4eV above the Fermi energy. At the band theory level, the 4f bands are located far below the Fermi level and the anisotropic Coulomb interaction within the 4f shell spreads the multilevel into broader 4f complexes below -2.5eV . The photoemission spectra obtained on YbRh2Si2 show a clear f -multilevel splitting into j=7/2 and 5/2 excitations. The interaction of the 4f7/2 levels close to the Fermi energy with two conduction bands shows visible hybridization gaps of 45 and 80meV, respectively. We discuss the origin of these excitations and provide an analysis according to Anderson's single-impurity model with parameters suggested by the band-structure calculation and the photoemission spectra. Both experiment and theory indicate nearly identical Fermi surfaces for LuRh2Si2 and YbRh2Si2 . The valency of Yb in YbRh2Si2 is estimated to be close to +3.

  10. Narrow-band optical transmission of metallic nanoslit arrays

    SciTech Connect (OSTI)

    Sun Zhijun; Yang Ying; Zuo Xiaoliu

    2012-10-22

    Metallic nanoslit arrays usually demonstrate wide transmission bands for transverse-magnetic-polarized incidence light. Here, we show that by introducing multi-dielectric layers underneath the metallic structure layer on the substrate, a narrow peak is formed, whose bandwidth can be down to a few nanometers. Three types of resonance modes in the region under the metal layer are identified responsible for the formation of the peak, i.e., a two-dimensional cavity resonance mode, which supports optical transmission, and two in-plane hybrid surface plasmon resonance modes locating on both sides of the peak that suppresses the transmission. Such structures can be applied in advanced photonic devices.

  11. L-asparagine crystals with wide gap semiconductor features: Optical absorption measurements and density functional theory computations

    SciTech Connect (OSTI)

    Zanatta, G.; Gottfried, C.; Silva, A. M.; Caetano, E. W. S.; Sales, F. A. M.; Freire, V. N.

    2014-03-28

    Results of optical absorption measurements are presented together with calculated structural, electronic, and optical properties for the anhydrous monoclinic L-asparagine crystal. Density functional theory (DFT) within the generalized gradient approximation (GGA) including dispersion effects (TS, Grimme) was employed to perform the calculations. The optical absorption measurements revealed that the anhydrous monoclinic L-asparagine crystal is a wide band gap material with 4.95 eV main gap energy. DFT-GGA+TS simulations, on the other hand, produced structural parameters in very good agreement with X-ray data. The lattice parameter differences ?a, ?b, ?c between theory and experiment were as small as 0.020, 0.051, and 0.022, respectively. The calculated band gap energy is smaller than the experimental data by about 15%, with a 4.23 eV indirect band gap corresponding to Z???? and Z???? transitions. Three other indirect band gaps of 4.30 eV, 4.32 eV, and 4.36 eV are assigned to ?3 ???, ?1 ???, and ?2 ??? transitions, respectively. ?-sol computations, on the other hand, predict a main band gap of 5.00 eV, just 50 meV above the experimental value. Electronic wavefunctions mainly originating from O 2pcarboxyl, C 2pside chain, and C 2pcarboxyl orbitals contribute most significantly to the highest valence and lowest conduction energy bands, respectively. By varying the lattice parameters from their converged equilibrium values, we show that the unit cell is less stiff along the b direction than for the a and c directions. Effective mass calculations suggest that hole transport behavior is more anisotropic than electron transport, but the mass values allow for some charge mobility except along a direction perpendicular to the molecular layers of L-asparagine which form the crystal, so anhydrous monoclinic L-asparagine crystals could behave as wide gap semiconductors. Finally, the calculations point to a high degree of optical anisotropy for the absorption and complex dielectric function, with more structured curves for incident light polarized along the 100 and 101 directions.

  12. Gas mixtures for spark gap closing switches (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Gas mixtures for spark gap closing switches Title: Gas mixtures for spark gap closing switches Gas mixtures for use in spark gap closing switches comprised of fluorocarbons and low ...

  13. Thermally triggered phononic gaps in liquids at THz scale

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bolmatov, Dima; Zhernenkov, Mikhail; Zavyalov, Dmitry; Stoupin, Stanislav; Cunsolo, Alessandro; Cai, Yong Q.

    2016-01-14

    In this study we present inelastic X-ray scattering experiments in a diamond anvil cell and molecular dynamic simulations to investigate the behavior of phononic excitations in liquid Ar. The spectra calculated using molecular dynamics were found to be in a good agreement with the experimental data. Furthermore, we observe that, upon temperature increases, a low-frequency transverse phononic gap emerges while high-frequency propagating modes become evanescent at the THz scale. The effect of strong localization of a longitudinal phononic mode in the supercritical phase is observed for the first time. The evidence for the high-frequency transverse phononic gap due to themore » transition from an oscillatory to a ballistic dynamic regimes of motion is presented and supported by molecular dynamics simulations. This transition takes place across the Frenkel line thermodynamic limit which demarcates compressed liquid and non-compressed fluid domains on the phase diagram and is supported by calculations within the Green-Kubo phenomenological formalism. These results are crucial to advance the development of novel terahertz thermal devices, phononic lenses, mirrors, and other THz metamaterials.« less

  14. WIDE BAND REGENERATIVE FREQUENCY DIVIDER AND MULTIPLIER

    DOE Patents [OSTI]

    Laine, E.F.

    1959-11-17

    A regenerative frequency divider and multiplier having wide band input characteristics is presented. The circuit produces output oscillations having frequencies related by a fixed ratio to input oscillations over a wide band of frequencies. In accomplishing this end, the divider-multiplier includes a wide band input circuit coupled by mixer means to a wide band output circuit having a pass band related by a fixed ratio to that of the input circuit. A regenerative feedback circuit derives a fixed frequency ratio feedback signal from the output circuit and applies same to the mixer means in proper phase relation to sustain fixed frequency ratio oscillations in the output circuit.

  15. DEVICE CONTROLLER, CAMERA CONTROL

    Energy Science and Technology Software Center (OSTI)

    1998-07-20

    This is a C++ application that is the server for the cameral control system. Devserv drives serial devices, such as cameras and videoswitchers used in a videoconference, upon request from a client such as the camxfgbfbx ccint program. cc Deverv listens on UPD ports for clients to make network contractions. After a client connects and sends a request to control a device (such as to pan,tilt, or zooma camera or do picture-in-picture with a videoswitcher),more » devserv formats the request into an RS232 message appropriate for the device and sends this message over the serial port to which the device is connected. Devserv then reads the reply from the device from the serial port to which the device is connected. Devserv then reads the reply from the device from the serial port and then formats and sends via multicast a status message. In addition, devserv periodically multicasts status or description messages so that all clients connected to the multicast channel know what devices are supported and their ranges of motion and the current position. The software design employs a class hierarchy such that an abstract base class for devices can be subclassed into classes for various device categories(e.g. sonyevid30, cononvco4, panasonicwjmx50, etc.). which are further subclassed into classes for various device categories. The devices currently supported are the Sony evi-D30, Canon, VCC1, Canon VCC3, and Canon VCC4 cameras and the Panasonic WJ-MX50 videoswitcher. However, developers can extend the class hierarchy to support other devices.« less

  16. Tuning the energy gap of conjugated polymer zwitterions for efficient...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Tuning the energy gap of conjugated polymer zwitterions for efficient interlayers and solar cells Citation Details In-Document Search Title: Tuning the energy gap...

  17. Bridging the Gap between Fundamental Physics and Chemistry and...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Bridging the Gap between Fundamental Physics and Chemistry and Applied Models for HCCI Engines Bridging the Gap between Fundamental Physics and Chemistry and Applied Models for HCCI ...

  18. Olene Gap Space Heating Low Temperature Geothermal Facility ...

    Open Energy Info (EERE)

    Space Heating Low Temperature Geothermal Facility Jump to: navigation, search Name Olene Gap Space Heating Low Temperature Geothermal Facility Facility Olene Gap Sector Geothermal...

  19. Miscibility gap closure, interface morphology, and phase microstructur...

    Office of Scientific and Technical Information (OSTI)

    Miscibility gap closure, interface morphology, and phase microstructure of 3D LixFePO4 ... Title: Miscibility gap closure, interface morphology, and phase microstructure of 3D ...

  20. Development of Low Energy Gap and Fully Regioregular Polythienylenevin...

    Office of Scientific and Technical Information (OSTI)

    Gap and Fully Regioregular Polythienylenevinylene Derivative Low energy gap and fully regioregular conjugated polymers find its wide use in solar energy conversion applications. ...

  1. Rapidity gap survival in central exclusive diffraction: Dynamical...

    Office of Scientific and Technical Information (OSTI)

    Rapidity gap survival in central exclusive diffraction: Dynamical mechanisms and uncertainties Citation Details In-Document Search Title: Rapidity gap survival in central exclusive ...

  2. CHP: Connecting the Gap between Markets and Utility Interconnection...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Connecting the Gap between Markets and Utility Interconnection and Tariff Practices, 2006 CHP: Connecting the Gap between Markets and Utility Interconnection and Tariff Practices, ...

  3. Heterojunction band offsets and dipole formation at BaTiO{sub 3}/SrTiO{sub 3} interfaces

    SciTech Connect (OSTI)

    Balaz, Snjezana; Zeng, Zhaoquan; Brillson, Leonard J.; Department of Physics, The Ohio State University, 191 West Woodruff, Columbus, Ohio 43210

    2013-11-14

    We used a complement of photoemission and cathodoluminescence techniques to measure formation of the BaTiO{sub 3} (BTO) on SrTiO{sub 3} (STO) heterojunction band offset grown monolayer by monolayer by molecular beam epitaxy. X-ray photoemission spectroscopy (XPS) provided core level and valence band edge energies to monitor the valence band offset in-situ as the first few crystalline BTO monolayers formed on the STO substrate. Ultraviolet photoemission spectroscopy (UPS) measured Fermi level positions within the band gap, work functions, and ionization potentials of the growing BTO film. Depth-resolved cathodoluminescence spectroscopy measured energies and densities of interface states at the buried heterojunction. Kraut-based XPS heterojunction band offsets provided evidence for STO/BTO heterojunction linearity, i.e., commutativity and transitivity. In contrast, UPS and XPS revealed a large dipole associated either with local charge transfer or strain-induced polarization within the BTO epilayer.

  4. Device Simulation Tool - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    PAZ0036_v2.jpg Device Simulation Tool Research Why Solar Fuels Goals & Objectives Thrust 1 Thrust 2 Thrust 3 Thrust 4 Publications Research Highlights Videos Innovations User Facilities Expert Team Benchmarking Database Device Simulation Tool XPS Spectral Database Research Introduction Why Solar Fuels? Goals & Objectives Thrusts Thrust 1 Thrust 2 Thrust 3 Thrust 4 Library Publications Research Highlights Videos Resources User Facilities Expert Team Benchmarking Database Device Simulation

  5. Barrier breaching device

    DOE Patents [OSTI]

    Honodel, C.A.

    1983-06-01

    A barrier breaching device that is designed primarily for opening holes in interior walls of buildings uses detonating fuse for explosive force. The fuse acts as the ribs or spokes of an umbrella-like device that may be opened up to form a cone. The cone is placed against the wall so that detonating fuse that rings the base of the device and which is ignited by the spoke-like fuses serves to cut a circular hole in the wall.

  6. Barrier breaching device

    DOE Patents [OSTI]

    Honodel, Charles A.

    1985-01-01

    A barrier breaching device that is designed primarily for opening holes in interior walls of buildings uses detonating fuse for explosive force. The fuse acts as the ribs or spokes of an umbrella-like device that may be opened up to form a cone. The cone is placed against the wall so that detonating fuse that rings the base of the device and which is ignited by the spoke-like fuses serves to cut a circular hole in the wall.

  7. The effect of spin-orbit coupling in band structure and edge states of bilayer graphene

    SciTech Connect (OSTI)

    Sahdan, Muhammad Fauzi; Darma, Yudi

    2015-04-16

    Topological insulators are predicted to be useful ranging from spintronics to quantum computation. Graphene was first predicted to be the precursor of topological insulator by Kane-Mele. They developed a Hamiltonian model to describe the gap opening in graphene. In this work, we investigate the band structure of bilayer grapheme and also its edge states by using this model with analytical approach. The results of our calculation show that the gap opening occurs at K and K’ point in bilayer graphene.In addition, a pair of gapless edge modes occurs both in the zigzag and arm-chair configurations are no longer exist. There are gap created at the edge even though thery are very small.

  8. Interconnected semiconductor devices

    DOE Patents [OSTI]

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  9. High efficiency photovoltaic device

    DOE Patents [OSTI]

    Guha, Subhendu; Yang, Chi C.; Xu, Xi Xiang

    1999-11-02

    An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

  10. Device and method for shortening reactor process tubes

    DOE Patents [OSTI]

    Frantz, Charles E.; Alexander, William K.; Lander, Walter E. B.

    1980-01-01

    This disclosure describes a device and method for in situ shortening of nuclear reactor zirconium alloy process tubes which have grown as a result of radiation exposure. An upsetting technique is utilized which involves inductively heating a short band of a process tube with simultaneous application of an axial load sufficient to cause upsetting with an attendant decrease in length of the process tube.

  11. Device and method for shortening reactor process tubes

    DOE Patents [OSTI]

    Frantz, C.E.; Alexander, W.K.; Lander, W.E.B.

    A device and method are described for in situ shortening of nuclear reactor zirconium alloy process tubes which have grown as a result of radiation exposure. An upsetting technique is utilized which involves inductively heating a short band of a process tube with simultaneous application of an axial load sufficient to cause upsetting with an attendant decrease in length of the process tube.

  12. Organic electronic devices using phthalimide compounds

    DOE Patents [OSTI]

    Hassan, Azad M.; Thompson, Mark E.

    2010-09-07

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  13. Organic electronic devices using phthalimide compounds

    DOE Patents [OSTI]

    Hassan, Azad M.; Thompson, Mark E.

    2012-10-23

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  14. Organic electronic devices using phthalimide compounds

    DOE Patents [OSTI]

    Hassan, Azad M.; Thompson, Mark E.

    2013-03-19

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  15. Tamper-indicating device having a glass body

    DOE Patents [OSTI]

    Johnston, Roger G.; Garcia, Anthony R. E.

    2003-04-29

    A tamper-indicating device is described. The device has a first glass body member and a second glass body member that are attached to each other through a hasp. The glass body members of the device can be tempered. The body members can be configured with hollow volumes into which powders, microparticles, liquids, gels, or combinations thereof are sealed. The choice, the amount, and the location of these materials can produce a visible, band pattern to provide each body member with a unique fingerprint identifier, which makes it extremely difficult to repair or replace once it is damaged in order to avoid tamper detection.

  16. Natural Gas Engine Development Gaps (Presentation)

    SciTech Connect (OSTI)

    Zigler, B.T.

    2014-03-01

    A review of current natural gas vehicle offerings is presented for both light-duty and medium- and heavy-duty applications. Recent gaps in the marketplace are discussed, along with how they have been or may be addressed. The stakeholder input process for guiding research and development needs via the Natural Gas Vehicle Technology Forum (NGVTF) to the U.S. Department of Energy and the California Energy Commission is reviewed. Current high-level natural gas engine development gap areas are highlighted, including efficiency, emissions, and the certification process.

  17. Homolumo gap from dynamical energy levels

    SciTech Connect (OSTI)

    Andric, I.; Jonke, L.; Jurman, D.; Nielsen, H. B.

    2009-11-15

    We introduce a dynamical matrix model where the matrix is interpreted as a Hamiltonian representing interaction of a bosonic system with a single fermion. We show how a system of second-quantized fermions influences the ground state of the whole system by producing a gap between the highest eigenvalue of the occupied single-fermion states and the lowest eigenvalue of the unoccupied single-fermion states. We describe the development of the gap in both the strong and weak coupling regimes, while for the intermediate coupling strength we expect formation of homolumo kinks.

  18. Ideal light concentrators with reflector gaps

    DOE Patents [OSTI]

    Winston, Roland (Chicago, IL)

    1980-01-01

    A cylindrical or trough-like radiant energy concentration and collection device is provided. The device includes an energy absorber, a glazing enveloping the absorber and a reflective wall. The ideal contour of the reflective wall is determined with reference to a virtual absorber and not the actual absorber cross section.

  19. Quasi one-dimensional band dispersion and surface metallization in long-range ordered polymeric wires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Vasseur, Guillaume; Fagot-Revurat, Yannick; Sicot, Muriel; Kierren, Bertrand; Moreau, Luc; Malterre, Daniel; Cardenas, Luis; Galeotti, Gianluca; Lipton-Duffin, Josh; Rosei, Frederico; et al

    2016-01-04

    We study the electronic structure of an ordered array of poly(para-phenylene) chains produced by surface-catalyzed dehalogenative polymerization of 1,4-dibromobenzene on copper (110). The quantization of unoccupied molecular states is measured as a function of oligomer length by scanning tunnelling spectroscopy, with Fermi level crossings observed for chains longer than ten phenyl rings. Angle-resolved photoelectron spectroscopy reveals a quasi-one-dimensional valence band as well as a direct gap of 1.15 eV, as the conduction band is partially filled through adsorption on the surface. Tight-binding modelling and ab initio density functional theory calculations lead to a full description of the organic band-structure, includingmore » the k-dispersion, the gap size and electron charge transfer mechanisms, highlighting a strong substrate-molecule interaction that drives the system into a metallic behaviour. In summary, we have fully characterized the band structure of a carbon-based conducting wire. This model system may be considered as a fingerprint of -conjugation of surface organic frameworks.« less

  20. Solar tracking device

    SciTech Connect (OSTI)

    Wyland, R.R.

    1981-01-20

    A solar tracking device having a plurality of reflector banks for reflecting the sun rays onto collector tubes and heating a fluid circulated therethrough. The reflector banks synchronized to follow the sun during the daily and yearly cycle of the earth as the earth orbits around the sun. The device by accurately following the sun provides a more efficient means of collecting solar energy.

  1. Microfabricated particle focusing device

    DOE Patents [OSTI]

    Ravula, Surendra K.; Arrington, Christian L.; Sigman, Jennifer K.; Branch, Darren W.; Brener, Igal; Clem, Paul G.; James, Conrad D.; Hill, Martyn; Boltryk, Rosemary June

    2013-04-23

    A microfabricated particle focusing device comprises an acoustic portion to preconcentrate particles over large spatial dimensions into particle streams and a dielectrophoretic portion for finer particle focusing into single-file columns. The device can be used for high throughput assays for which it is necessary to isolate and investigate small bundles of particles and single particles.

  2. Device for removing blackheads

    DOE Patents [OSTI]

    Berkovich, Tamara

    1995-03-07

    A device for removing blackheads from pores in the skin having a elongated handle with a spoon shaped portion mounted on one end thereof, the spoon having multiple small holes piercing therethrough. Also covered is method for using the device to remove blackheads.

  3. Capillary interconnect device

    SciTech Connect (OSTI)

    Renzi, Ronald F

    2013-11-19

    An interconnecting device for connecting a plurality of first fluid-bearing conduits to a corresponding plurality of second fluid-bearing conduits thereby providing fluid communication between the first fluid-bearing conduits and the second fluid-bearing conduits. The device includes a manifold and one or two ferrule plates that are held by compressive axial forces.

  4. Self-actuated device

    DOE Patents [OSTI]

    Hecht, Samuel L.

    1984-01-01

    A self-actuated device, of particular use as a valve or an orifice for nuclear reactor fuel and blanket assemblies, in which a gas produced by a neutron induced nuclear reaction gradually accumulates as a function of neutron fluence. The gas pressure increase occasioned by such accumulation of gas is used to actuate the device.

  5. Band structure engineering and thermoelectric properties of

    Office of Scientific and Technical Information (OSTI)

    charge-compensated filled skutterudites (Journal Article) | SciTech Connect Band structure engineering and thermoelectric properties of charge-compensated filled skutterudites Citation Details In-Document Search Title: Band structure engineering and thermoelectric properties of charge-compensated filled skutterudites Thermoelectric properties of semiconductors are intimately related to their electronic band structure, which can be engineered via chemical doping. Dopant Ga in the

  6. X-BAND KLYSTRON DEVELOPMENT AT SLAC

    SciTech Connect (OSTI)

    Vlieks, Arnold E.; /SLAC

    2009-08-03

    The development of X-band klystrons at SLAC originated with the idea of building an X-band Linear Collider in the late 1980's. Since then much effort has been expended in developing a reliable X-band Power source capable of delivering >50 MW RF power in pulse widths >1.5 {micro}s. I will report on some of the technical issues and design strategies which have led to the current SLAC klystron designs.

  7. Device for cutting protrusions

    DOE Patents [OSTI]

    Bzorgi, Fariborz M.

    2011-07-05

    An apparatus for clipping a protrusion of material is provided. The protrusion may, for example, be a bolt head, a nut, a rivet, a weld bead, or a temporary assembly alignment tab protruding from a substrate surface of assembled components. The apparatus typically includes a cleaver having a cleaving edge and a cutting blade having a cutting edge. Generally, a mounting structure configured to confine the cleaver and the cutting blade and permit a range of relative movement between the cleaving edge and the cutting edge is provided. Also typically included is a power device coupled to the cutting blade. The power device is configured to move the cutting edge toward the cleaving edge. In some embodiments the power device is activated by a momentary switch. A retraction device is also generally provided, where the retraction device is configured to move the cutting edge away from the cleaving edge.

  8. Fluidic nanotubes and devices

    DOE Patents [OSTI]

    Yang, Peidong; He, Rongrui; Goldberger, Joshua; Fan, Rong; Wu, Yiying; Li, Deyu; Majumdar, Arun

    2008-04-08

    Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

  9. Fluidic nanotubes and devices

    DOE Patents [OSTI]

    Yang, Peidong; He, Rongrui; Goldberger, Joshua; Fan, Rong; Wu, Yiying; Li, Deyu; Majumdar, Arun

    2010-01-10

    Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

  10. Planar electrochemical device assembly

    DOE Patents [OSTI]

    Jacobson; Craig P. (Lafayette, CA), Visco; Steven J. (Berkeley, CA), De Jonghe; Lutgard C. (Lafayette, CA)

    2010-11-09

    A pre-fabricated electrochemical device having a dense electrolyte disposed between an anode and a cathode preferably deposited as thin films is bonded to a porous electrically conductive support. A second porous electrically conductive support may be bonded to a counter electrode of the electrochemical device. Multiple electrochemical devices may be bonded in parallel to a single porous support, such as a perforated sheet to provide a planar array. Planar arrays may be arranged in a stacked interconnected array. A method of making a supported electrochemical device is disclosed wherein the method includes a step of bonding a pre-fabricated electrochemical device layer to an existing porous metal or porous metal alloy layer.

  11. Planar electrochemical device assembly

    DOE Patents [OSTI]

    Jacobson, Craig P. (Lafayette, CA); Visco, Steven J. (Berkeley, CA); De Jonghe, Lutgard C. (Lafayette, CA)

    2007-06-19

    A pre-fabricated electrochemical device having a dense electrolyte disposed between an anode and a cathode preferably deposited as thin films is bonded to a porous electrically conductive support. A second porous electrically conductive support may be bonded to a counter electrode of the electrochemical device. Multiple electrochemical devices may be bonded in parallel to a single porous support, such as a perforated sheet to provide a planar array. Planar arrays may be arranged in a stacked interconnected array. A method of making a supported electrochemical device is disclosed wherein the method includes a step of bonding a pre-fabricated electrochemical device layer to an existing porous metal or porous metal alloy layer.

  12. Narrow band wavelength selective filter using grating assisted single ring resonator

    SciTech Connect (OSTI)

    Prabhathan, P. Murukeshan, V. M.

    2014-09-15

    This paper illustrates a filter configuration which uses a single ring resonator of larger radius connected to a grating resonator at its drop port to achieve single wavelength selectivity and switching property with spectral features suitable for on-chip wavelength selection applications. The proposed configuration is expected to find applications in silicon photonics devices such as, on-chip external cavity lasers and multi analytic label-free biosensors. The grating resonator has been designed for a high Q-factor, high transmittivity, and minimum loss so that the wavelength selectivity of the device is improved. The proof-of-concept device has been demonstrated on a Silicon-on-Insulator (SOI) platform through electron beam lithography and Reactive Ion Etching (RIE) process. The transmission spectrum shows narrow band single wavelength selection and switching property with a high Free Spectral Range (FSR) ?60 nm and side band rejection ratio >15 dB.

  13. Aroostook Band of Micmac Indians- 2005 Project

    Broader source: Energy.gov [DOE]

    The goal of the project is to develop a strategic energy plan in order to reduce energy costs in the Aroostook Band of Micmacs' government buildings and homes.

  14. Radiative Heating in Underexplored Bands Campaign (RHUBC)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bands Campaign (RHUBC) D. Turner and E. Mlawer RHUBC Breakout Session 2008 ARM Science Team Meeting 13 March, 2008 Norfolk, Virginia Motivation * Radiative heatingcooling in the ...

  15. Soboba Band of Luiseno Indians- 2011 Project

    Broader source: Energy.gov [DOE]

    The Soboba Band of Luiseno Indians would like to begin to focus on renewable sources for electricity and to actively target lowering the energy usage of the community.

  16. Eastern Band of Cherokee Indians- 2010 Project

    Broader source: Energy.gov [DOE]

    The Eastern Band of Cherokee Indians (EBCI) is using the grant funds from the Department of Energy to complete the Energy Efficiency Improvements to seven EBCI facilities.

  17. Five Facts About the Gender Pay Gap

    Broader source: Energy.gov [DOE]

    Over the past century, American women have made tremendous strides in increasing their labor market experience and their skills. On Equal Pay Day, however, we focus on a stubborn and troubling fact: Despite women’s gains, a large gender pay gap still exists.

  18. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  19. INTERNAL CUTTING DEVICE

    DOE Patents [OSTI]

    Russell, W.H. Jr.

    1959-06-30

    A device is described for removing material from the interior of a hollow workpiece so as to form a true spherical internal surface in a workpiece, or to cut radial slots of an adjustable constant depth in an already established spherical internal surface. This is accomplished by a spring loaded cutting tool adapted to move axially wherein the entire force urging the tool against the workpiece is derived from the spring. Further features of importance involve the provision of a seal between the workpiece and the cutting device and a suction device for carrying away particles of removed material.

  20. Rain sampling device

    DOE Patents [OSTI]

    Nelson, D.A.; Tomich, S.D.; Glover, D.W.; Allen, E.V.; Hales, J.M.; Dana, M.T.

    1991-05-14

    The present invention constitutes a rain sampling device adapted for independent operation at locations remote from the user which allows rainfall to be sampled in accordance with any schedule desired by the user. The rain sampling device includes a mechanism for directing wet precipitation into a chamber, a chamber for temporarily holding the precipitation during the process of collection, a valve mechanism for controllably releasing samples of the precipitation from the chamber, a means for distributing the samples released from the holding chamber into vessels adapted for permanently retaining these samples, and an electrical mechanism for regulating the operation of the device. 11 figures.

  1. Rain sampling device

    DOE Patents [OSTI]

    Nelson, Danny A. (Richland, WA); Tomich, Stanley D. (Richland, WA); Glover, Donald W. (Prosser, WA); Allen, Errol V. (Benton City, WA); Hales, Jeremy M. (Kennewick, WA); Dana, Marshall T. (Richland, WA)

    1991-01-01

    The present invention constitutes a rain sampling device adapted for independent operation at locations remote from the user which allows rainfall to be sampled in accordance with any schedule desired by the user. The rain sampling device includes a mechanism for directing wet precipitation into a chamber, a chamber for temporarily holding the precipitation during the process of collection, a valve mechanism for controllably releasing samples of said precipitation from said chamber, a means for distributing the samples released from the holding chamber into vessels adapted for permanently retaining these samples, and an electrical mechanism for regulating the operation of the device.

  2. Apparatus for loading a band saw blade

    DOE Patents [OSTI]

    Reeves, S.R.

    1990-03-20

    A band saw blade is loaded between pairs of guide wheels upon tensioning the blade by guiding the blade between pairs of spaced guide plates which define converging slots that converge toward the guide wheels. The approach is particularly useful in loading blades on underwater band saw machines used to cut radioactive materials. 2 figs.

  3. Apparatus for loading a band saw blade

    DOE Patents [OSTI]

    Reeves, Steven R.

    1990-01-01

    A band saw blade is loaded between pairs of guide wheels upon tensioning the blade by guiding the blade between pairs of spaced guide plates which define converging slots that converge toward the guide wheels. The approach is particularly useful in loading blades on underwater band saw machines used to cut radioactive materials.

  4. Bring Your Own Device

    Broader source: Energy.gov [DOE]

    Bring your own Device, or BYOD, has been a popular topic for some time now. While government organizations and private companies continue to struggle with how to enjoy the business and economic...

  5. High temperature measuring device

    DOE Patents [OSTI]

    Tokarz, Richard D.

    1983-01-01

    A temperature measuring device for very high design temperatures (to 2,000.degree. C.). The device comprises a homogenous base structure preferably in the form of a sphere or cylinder. The base structure contains a large number of individual walled cells. The base structure has a decreasing coefficient of elasticity within the temperature range being monitored. A predetermined quantity of inert gas is confined within each cell. The cells are dimensionally stable at the normal working temperature of the device. Increases in gaseous pressure within the cells will permanently deform the cell walls at temperatures within the high temperature range to be measured. Such deformation can be correlated to temperature by calibrating similarly constructed devices under known time and temperature conditions.

  6. Superconducting gap evolution in overdoped BaFe₂(As1-xPx)₂ single crystals through nanocalorimetry

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Campanini, D.; Diao, Z.; Fang, L.; Kwok, W.-K.; Welp, U.; Rydh, A.

    2015-06-18

    We report on specific heat measurements on clean overdoped BaFe₂(As1-xPx)₂ single crystals performed with a high resolution membrane-based nanocalorimeter. A nonzero residual electronic specific heat coefficient at zero temperature γr=C/T|T→0 is seen for all doping compositions, indicating a considerable fraction of the Fermi surface ungapped or having very deep minima. The remaining superconducting electronic specific heat is analyzed through a two-band s-wave α model in order to investigate the gap structure. Close to optimal doping we detect a single zero-temperature gap of Δ₀~5.3 me V, corresponding to Δ₀/kBTc ~ 2.2. Increasing the phosphorus concentration x, the main gap reduces tillmore » a value of Δ₀ ~ 1.9 meV for x = 0.55 and a second weaker gap becomes evident. From the magnetic field effect on γr, all samples however show similar behavior [γr(H) - γr (H = 0)∝ Hn, with n between 0.6 and 0.7]. This indicates that, despite a considerable redistribution of the gap weights, the total degree of gap anisotropy does not change drastically with doping.« less

  7. Inverted organic photosensitive device

    DOE Patents [OSTI]

    Forrest, Stephen R.; Tong, Xiaoran; Lee, Jun Yeob; Cho, Yong Joo

    2015-09-08

    There is disclosed a method for preparing the surface of a metal substrate. The present disclosure also relates to an organic photovoltaic device including a metal substrate made by such method. Also disclosed herein is an inverted photosensitive device including a stainless steel foil reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode over the donor-acceptor heterojunction.

  8. Raney nickel catalytic device

    DOE Patents [OSTI]

    O'Hare, Stephen A.

    1978-01-01

    A catalytic device for use in a conventional coal gasification process which includes a tubular substrate having secured to its inside surface by expansion a catalytic material. The catalytic device is made by inserting a tubular catalytic element, such as a tubular element of a nickel-aluminum alloy, into a tubular substrate and heat-treating the resulting composite to cause the tubular catalytic element to irreversibly expand against the inside surface of the substrate.

  9. Electronic security device

    DOE Patents [OSTI]

    Eschbach, E.A.; LeBlanc, E.J.; Griffin, J.W.

    1992-03-17

    The present invention relates to a security device having a control box containing an electronic system and a communications loop over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system and a detection module capable of registering changes in the voltage and phase of the signal transmitted over the loop. 11 figs.

  10. Electronic security device

    DOE Patents [OSTI]

    Eschbach, Eugene A.; LeBlanc, Edward J.; Griffin, Jeffrey W.

    1992-01-01

    The present invention relates to a security device having a control box (12) containing an electronic system (50) and a communications loop (14) over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system (50) and a detection module (72) capable of registering changes in the voltage and phase of the signal transmitted over the loop.

  11. Contamination control device

    DOE Patents [OSTI]

    Clark, Robert M.; Cronin, John C.

    1977-01-01

    A contamination control device for use in a gas-insulated transmission bus consisting of a cylindrical center conductor coaxially mounted within a grounded cylindrical enclosure. The contamination control device is electrically connected to the interior surface of the grounded outer shell and positioned along an axial line at the lowest vertical position thereon. The contamination control device comprises an elongated metallic member having a generally curved cross-section in a first plane perpendicular to the axis of the bus and having an arcuate cross-section in a second plane lying along the axis of the bus. Each opposed end of the metallic member and its opposing sides are tapered to form a pair of generally converging and downward sloping surfaces to trap randomly moving conductive particles in the relatively field-free region between the metallic member and the interior surface of the grounded outer shell. The device may have projecting legs to enable the device to be spot welded to the interior of the grounded housing. The control device provides a high capture probability and prevents subsequent release of the charged particles after the capture thereof.

  12. Wireless device monitoring systems and monitoring devices, and associated methods

    DOE Patents [OSTI]

    McCown, Steven H; Derr, Kurt W; Rohde, Kenneth W

    2014-05-27

    Wireless device monitoring systems and monitoring devices include a communications module for receiving wireless communications of a wireless device. Processing circuitry is coupled with the communications module and configured to process the wireless communications to determine whether the wireless device is authorized or unauthorized to be present at the monitored area based on identification information of the wireless device. Methods of monitoring for the presence and identity of wireless devices are also provided.

  13. Gap Assessment in the Emergency Response Community

    SciTech Connect (OSTI)

    Barr, Jonathan L.; Burtner, Edwin R.; Pike, William A.; Peddicord, Annie M Boe; Minsk, Brian S.

    2010-09-27

    This report describes a gap analysis of the emergency response and management (EM) community, performed during the fall of 2009. Pacific Northwest National Laboratory (PNNL) undertook this effort to identify potential improvements to the functional domains in EM that could be provided by the application of current or future technology. To perform this domain-based gap analysis, PNNL personnel interviewed subject matter experts (SMEs) across the EM domain; to make certain that the analyses reflected a representative view of the community, the SMEs were from a variety of geographic areas and from various sized communities (urban, suburban, and rural). PNNL personnel also examined recent and relevant after-action reports and U.S. Government Accountability Office reports.

  14. Bridging the Gaps on Prepaid Utility Service

    Broader source: Energy.gov [DOE]

    Prepaid utility service — which is an alternative payment option in which consumers buy a dollar amount of electricity, and utilities deduct energy usage from that balance as it is used — is one area where these changes converge. The Office of Electricity Delivery and Energy Reliability’s report entitled “Bridging the Gaps on Prepaid Utility Service” examines utilities’ and consumers’ experiences with prepay.

  15. Spark gap switch with spiral gas flow

    DOE Patents [OSTI]

    Brucker, John P.

    1989-01-01

    A spark gap switch having a contaminate removal system using an injected gas. An annular plate concentric with an electrode of the switch defines flow paths for the injected gas which form a strong spiral flow of the gas in the housing which is effective to remove contaminates from the switch surfaces. The gas along with the contaminates is exhausted from the housing through one of the ends of the switch.

  16. HIGH VOLTAGE, HIGH CURRENT SPARK GAP SWITCH

    DOE Patents [OSTI]

    Dike, R.S.; Lier, D.W.; Schofield, A.E.; Tuck, J.L.

    1962-04-17

    A high voltage and current spark gap switch comprising two main electrodes insulatingly supported in opposed spaced relationship and a middle electrode supported medially between the main electrodes and symmetrically about the median line of the main electrodes is described. The middle electrode has a perforation aligned with the median line and an irradiation electrode insulatingly supported in the body of the middle electrode normal to the median line and protruding into the perforation. (AEC)

  17. Method and device for tensile testing of cable bundles

    DOE Patents [OSTI]

    Robertson, Lawrence M; Ardelean, Emil V; Goodding, James C; Babuska, Vit

    2012-10-16

    A standard tensile test device is improved to accurately measure the mechanical properties of stranded cables, ropes, and other composite structures wherein a witness is attached to the top and bottom mounting blocks holding the cable under test. The witness is comprised of two parts: a top and a bottom rod of similar diameter with the bottom rod having a smaller diameter stem on its upper end and the top rod having a hollow opening in its lower end into which the stem fits forming a witness joint. A small gap is present between the top rod and the larger diameter portion of the bottom rod. A standard extensometer is attached to the top and bottom rods of the witness spanning this small witness gap. When a force is applied to separate the mounting blocks, the gap in the witness expands the same length that the entire test specimen is stretched.

  18. Energy harvesting devices for harvesting energy from terahertz electromagnetic radiation

    DOE Patents [OSTI]

    Novack, Steven D.; Kotter, Dale K.; Pinhero, Patrick J.

    2012-10-09

    Methods, devices and systems for harvesting energy from electromagnetic radiation are provided including harvesting energy from electromagnetic radiation. In one embodiment, a device includes a substrate and one or more resonance elements disposed in or on the substrate. The resonance elements are configured to have a resonant frequency, for example, in at least one of the infrared, near-infrared and visible light spectra. A layer of conductive material may be disposed over a portion of the substrate to form a ground plane. An optical resonance gap or stand-off layer may be formed between the resonance elements and the ground plane. The optical resonance gap extends a distance between the resonance elements and the layer of conductive material approximately one-quarter wavelength of a wavelength of the at least one resonance element's resonant frequency. At least one energy transfer element may be associated with the at least one resonance element.

  19. Bridging the PSI Knowledge Gap: A Multi-Scale Approach

    SciTech Connect (OSTI)

    Wirth, Brian D

    2015-01-08

    Plasma-surface interactions (PSI) pose an immense scientific hurdle in magnetic confinement fusion and our present understanding of PSI in confinement environments is highly inadequate; indeed, a recent Fusion Energy Sciences Advisory Committee report found that 4 out of the 5 top five fusion knowledge gaps were related to PSI. The time is appropriate to develop a concentrated and synergistic science effort that would expand, exploit and integrate the wealth of laboratory ion-beam and plasma research, as well as exciting new computational tools, towards the goal of bridging the PSI knowledge gap. This effort would broadly advance plasma and material sciences, while providing critical knowledge towards progress in fusion PSI. This project involves the development of a Science Center focused on a new approach to PSI science; an approach that both exploits access to state-of-the-art PSI experiments and modeling, as well as confinement devices. The organizing principle is to develop synergistic experimental and modeling tools that treat the truly coupled multi-scale aspect of the PSI issues in confinement devices. This is motivated by the simple observation that while typical lab experiments and models allow independent manipulation of controlling variables, the confinement PSI environment is essentially self-determined with few outside controls. This means that processes that may be treated independently in laboratory experiments, because they involve vastly different physical and time scales, will now affect one another in the confinement environment. Also, lab experiments cannot simultaneously match all exposure conditions found in confinement devices typically forcing a linear extrapolation of lab results. At the same time programmatic limitations prevent confinement experiments alone from answering many key PSI questions. The resolution to this problem is to usefully exploit access to PSI science in lab devices, while retooling our thinking from a linear and de-coupled extrapolation to a multi-scale, coupled approach. The PSI Plasma Center consisted of three equal co-centers; one located at the MIT Plasma Science and Fusion Center, one at UC San Diego Center for Energy Research and one at the UC Berkeley Department of Nuclear Engineering, which moved to the University of Tennessee, Knoxville (UTK) with Professor Brian Wirth in July 2010. The Center had three co-directors: Prof. Dennis Whyte led the MIT co-center, the UCSD co-center was led by Dr. Russell Doerner, and Prof. Brian Wirth led the UCB/UTK center. The directors have extensive experience in PSI and material research, and have been internationally recognized in the magnetic fusion, materials and plasma research fields. The co-centers feature keystone PSI experimental and modeling facilities dedicated to PSI science: the DIONISOS/CLASS facility at MIT, the PISCES facility at UCSD, and the state-of-the-art numerical modeling capabilities at UCB/UTK. A collaborative partner in the center is Sandia National Laboratory at Livermore (SNL/CA), which has extensive capabilities with low energy ion beams and surface diagnostics, as well as supporting plasma facilities, including the Tritium Plasma Experiment, all of which significantly augment the Center. Interpretive, continuum material models are available through SNL/CA, UCSD and MIT. The participating institutions of MIT, UCSD, UCB/UTK, SNL/CA and LLNL brought a formidable array of experimental tools and personnel abilities into the PSI Plasma Center. Our work has focused on modeling activities associated with plasma surface interactions that are involved in effects of He and H plasma bombardment on tungsten surfaces. This involved performing computational material modeling of the surface evolution during plasma bombardment using molecular dynamics modeling. The principal outcomes of the research efforts within the combined experimental – modeling PSI center are to provide a knowledgebase of the mechanisms of surface degradation, and the influence of the surface on plasma conditions.

  20. ARM - Campaign Instrument - s-band-profiler

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govInstrumentss-band-profiler Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign Instrument : NOAA S-band (2835 Mhz) Profiler (S-BAND-PROFILER) Instrument Categories Atmospheric Profiling, Cloud Properties Campaigns CRYSTAL-FACE [ Download Data ] Off Site Campaign : various, including non-ARM sites, 2002.06.26 - 2002.08.01 Midlatitude Continental Convective Clouds Experiment (MC3E): Multi-Frequency Profilers [ Download Data ] Southern Great

  1. Device for conversion of electromagnetic radiation into electrical current

    DOE Patents [OSTI]

    Blakeslee, A. Eugene; Mitchell, Kim W.

    1981-01-01

    Electromagnetic energy may be converted directly into electrical energy by a device comprising a sandwich of at least two semiconductor portions, each portion having a p-n junction with a characteristic energy gap, and the portions lattice matched to one another by an intervening superlattice structure. This superlattice acts to block propagation into the next deposited portion of those dislocation defects which can form due to lattice mismatch between adjacent portions.

  2. Device for conversion of electromagnetic radiation into electrical current

    DOE Patents [OSTI]

    Blakeslee, A.E.; Mitchell, K.W.

    1980-03-25

    Electromagnetic energy may be converted directly into electrical energy by a device comprising a sandwich of at least two semiconductor portions, each portion having a p-n junction with a characteristic energy gap, and the portions lattice matched to one another by an intervening superlattice structure. This superlattice acts to block propagation into the next deposited portion of those dislocation defects which can form due to lattice mismatch between adjacent portions.

  3. Electrical apparatus lockout device

    DOE Patents [OSTI]

    Gonzales, Rick

    1999-01-01

    A simple lockout device for electrical equipment equipped with recessed power blades is described. The device comprises a face-plate (12) having a threaded member (14) attached thereto and apertures suitable for accommodating the power blades of a piece of electrical equipment, an elastomeric nose (16) abutting the face-plate having a hole for passage of the threaded member therethrough and power blade apertures in registration with those of the face-plate, a block (20) having a recess (34) in its forward face for receiving at least a portion of the hose, a hole therein for receiving the threaded member and an integral extension (26) extending from its rear face. A thumb screw (22) suitable for turning with the hands and having internal threads suitable for engaging the threaded member attached to the face-plate is inserted into a passage in the integral extension to engage the threaded member in such a fashion that when the device is inserted over the recessed power blades of a piece of electrical equipment and the thumb screw (22) tightened, the elastomeric nose (16) is compressed between the face-plate (12) and the block (20) forcing it to expand laterally thereby securing the device in the recess and precluding the accidental or intentional energization of the piece of equipment by attachment of a power cord to the recessed power blades. Means are provided in the interval extension and the thumb screw for the attachment of a locking device (46) which will satisfy OSHA standards.

  4. Spectral tailoring device

    DOE Patents [OSTI]

    Brager, H.R.; Schenter, R.E.; Carter, L.L.; Karnesky, R.A.

    1987-08-05

    A spectral tailoring device for altering the neutron energy spectra and flux of neutrons in a fast reactor thereby selectively to enhance or inhibit the transmutation rate of a target metrical to form a product isotope. Neutron moderators, neutron filters, neutron absorbers and neutron reflectors may be used as spectral tailoring devices. Depending on the intended use for the device, a member from each of these four classes of materials could be used singularly, or in combination, to provide a preferred neutron energy spectra and flux of the neutrons in the region of the target material. In one embodiment of the invention, an assembly is provided for enhancing the production of isotopes, such as cobalt 60 and gadolinium 153. In another embodiment of the invention, a spectral tailoring device is disposed adjacent a target material which comprises long lived or volatile fission products and the device is used to shift the neutron energy spectra and flux of neutrons in the region of the fission products to preferentially transmute them to produce a less volatile fission product inventory. 6 figs.

  5. Control Banding and Nanotechnology Synergist

    SciTech Connect (OSTI)

    Zalk, D; Paik, S

    2009-12-15

    The average Industrial Hygienist (IH) loves a challenge, right? Okay, well here is one with more than a few twists. We start by going through the basics of a risk assessment. You have some chemical agents, a few workers, and the makings of your basic exposure characterization. However, you have no occupational exposure limit (OEL), essentially no toxicological basis, and no epidemiology. Now the real handicap is that you cannot use sampling pumps, cassettes, tubes, or any of the media in your toolbox, and the whole concept of mass-to-dose is out the window, even at high exposure levels. Of course, by the title, you knew we were talking about nanomaterials (NM). However, we wonder how many IHs know that this topic takes everything you know about your profession and turns it upside down. It takes the very foundations that you worked so hard in college and in the field to master and pulls it out from underneath you. It even takes the gold standard of our profession, the quantitative science of exposure assessment, and makes it look pretty darn rusty. Now with NM there is the potential to get some aspect of quantitative measurements, but the instruments are generally very expensive and getting an appropriate workplace personal exposure measurement can be very difficult if not impossible. The potential for workers getting exposures, however, is very real, as evidenced by a recent publication reporting worker exposures to polyacrylate nanoparticles in a Chinese factory (Song et al. 2009). With something this complex and challenging, how does a concept as simple as Control Banding (CB) save the day? Although many IHs have heard of CB, most of their knowledge comes from its application in the COSHH Essentials toolkit. While there is conflicting published research on COSHH Essentials and its value for risk assessments, almost all of the experts agree that it can be useful when no OELs are available (Zalk and Nelson 2008). It is this aspect of CB, its utility with uncertainty, that attracted international NM experts to recommend this qualitative risk assessment approach for NM. However, since their CB recommendation was only in theory, we took on the challenge of developing a working toolkit, the CB Nanotool (see Zalk et al. 2009 and Paik et al. 2008), as a means to perform a risk assessment and protect researchers at the Lawrence Livermore National Laboratory. While it's been acknowledged that engineered NM have potentially endless benefits for society, it became clear to us that the very properties that make nanotechnology so useful to industry could also make them dangerous to humans and the environment. Among the uncertainties and unknowns with NM are: the contribution of their physical structure to their toxicity, significant differences in their deposition and clearance in the lungs when compared to their parent material (PM), a lack of agreement on the appropriate indices for exposure to NM, and very little background information on exposure scenarios or populations at risk. Part of this lack of background information can be traced to the lack of risk assessments historically performed in the industry, with a recent survey indicating that 65% of companies working with NM are not doing any kind of NM-specific risk assessment as they focus on traditional PM methods for IH (Helland et al. 2009). The good news is that the amount of peer-reviewed publications that address environmental, health and safety aspects of NM has been increasing over the last few years; however, the percentage of these that address practical methods to reduce exposure and protect workers is orders of magnitude lower. Our intent in developing the CB Nanotool was to create a simplified approach that would protect workers while unraveling the mysteries of NM for experts and non-experts alike. Since such a large part of the toxicological effects of both the physical and chemical properties of NM were unknown, not to mention changing logarithmically as new NM research continues growing, we needed to account for this lack of information as part of the CB Nano

  6. Buffalo Gap 3 Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    3 Wind Farm Jump to: navigation, search Name Buffalo Gap 3 Wind Farm Facility Buffalo Gap 3 Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner...

  7. Radiative Heating in Underexplored Bands Campaign (RHUBC)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Underexplored Bands Campaign (RHUBC) Feb 22 - Mar 14, 2007 Dave Turner, Eli Mlawer RHUBC ... at 183 GHz RHUBC Participants * PIs: Dave Turner and Eli Mlawer * Co-Is: - Paul Green, ...

  8. Vehicle Codes and Standards: Overview and Gap Analysis

    SciTech Connect (OSTI)

    Blake, C.; Buttner, W.; Rivkin, C.

    2010-02-01

    This report identifies gaps in vehicle codes and standards and recommends ways to fill the gaps, focusing on six alternative fuels: biodiesel, natural gas, electricity, ethanol, hydrogen, and propane.

  9. ROSS Skills, Knowledge, and Abilities Training Evaluation. Gaps and Recommendations

    SciTech Connect (OSTI)

    Ala, Maureen; Gruidl, Jeremiah; Buddemeier, Brooke

    2015-09-30

    This document describes the development of the ROSS SKAs, the cross-mapping of the SKAs to the available training, identifies gaps in the SKA and training, and provides recommendations to address those gaps.

  10. Coexistence of a pseudogap and a superconducting gap for the...

    Office of Scientific and Technical Information (OSTI)

    Coexistence of a pseudogap and a superconducting gap for the high - T c superconductor La ... Title: Coexistence of a pseudogap and a superconducting gap for the high - T c ...

  11. Nonaqueous Electrical Storage Device

    DOE Patents [OSTI]

    McEwen, Alan B.; Evans, David A.; Blakley, Thomas J.; Goldman, Jay L.

    1999-10-26

    An electrochemical capacitor is disclosed that features two, separated, high surface area carbon cloth electrodes sandwiched between two current collectors fabricated of a conductive polymer having a flow temperature greater than 130.degree. C., the perimeter of the electrochemical capacitor being sealed with a high temperature gasket to form a single cell device. The gasket material is a thermoplastic stable at temperatures greater than 100.degree. C., preferably a polyester or a polyurethane, and having a reflow temperature above 130.degree. C. but below the softening temperature of the current collector material. The capacitor packaging has good mechanical integrity over a wide temperature range, contributes little to the device equivalent series resistance (ESR), and is stable at high potentials. In addition, the packaging is designed to be easily manufacturable by assembly line methods. The individual cells can be stacked in parallel or series configuration to reach the desired device voltage and capacitance.

  12. Fragment capture device

    DOE Patents [OSTI]

    Payne, Lloyd R.; Cole, David L.

    2010-03-30

    A fragment capture device for use in explosive containment. The device comprises an assembly of at least two rows of bars positioned to eliminate line-of-sight trajectories between the generation point of fragments and a surrounding containment vessel or asset. The device comprises an array of at least two rows of bars, wherein each row is staggered with respect to the adjacent row, and wherein a lateral dimension of each bar and a relative position of each bar in combination provides blockage of a straight-line passage of a solid fragment through the adjacent rows of bars, wherein a generation point of the solid fragment is located within a cavity at least partially enclosed by the array of bars.

  13. Electrochromic optical switching device

    DOE Patents [OSTI]

    Lampert, C.M.; Visco, S.J.

    1992-08-25

    An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source. 3 figs.

  14. Electrochromic optical switching device

    DOE Patents [OSTI]

    Lampert, Carl M. (El Sobrante, CA); Visco, Steven J. (Berkeley, CA)

    1992-01-01

    An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source.

  15. Nonimaging radiant energy device

    DOE Patents [OSTI]

    Winston, Roland; Ning, Xiaohui

    1993-01-01

    A nonimaging radiant energy device may include a hyperbolically shaped reflective element with a radiant energy inlet and a radiant energy outlet. A convex lens is provided at the radiant energy inlet and a concave lens is provided at the radiant energy outlet. Due to the provision of the lenses and the shape of the walls of the reflective element, the radiant energy incident at the radiant energy inlet within a predetermined angle of acceptance is emitted from the radiant energy outlet exclusively within an acute exit angle. In another embodiment, the radiant energy device may include two interconnected hyperbolically shaped reflective elements with a respective convex lens being provided at each aperture of the device.

  16. Nonimaging radiant energy device

    DOE Patents [OSTI]

    Winston, Roland; Ning, Xiaohui

    1996-01-01

    A nonimaging radiant energy device may include a hyperbolically shaped reflective element with a radiant energy inlet and a radiant energy outlet. A convex lens is provided at the radiant energy inlet and a concave lens is provided at the radiant energy outlet. Due to the provision of the lenses and the shape of the walls of the reflective element, the radiant energy incident at the radiant energy inlet within a predetermined angle of acceptance is emitted from the radiant energy outlet exclusively within an acute exit angle. In another embodiment, the radiant energy device may include two interconnected hyperbolically shaped reflective elements with a respective convex lens being provided at each aperture of the device.

  17. Pendulum detector testing device

    DOE Patents [OSTI]

    Gonsalves, John M.

    1997-01-01

    A detector testing device which provides consistent, cost-effective, repeatable results. The testing device is primarily constructed of PVC plastic and other non-metallic materials. Sensitivity of a walk-through detector system can be checked by: 1) providing a standard test object simulating the mass, size and material content of a weapon or other contraband, 2) suspending the test object in successive positions, such as head, waist and ankle levels, simulating where the contraband might be concealed on a person walking through the detector system; and 3) swinging the suspended object through each of the positions, while operating the detector system and observing its response. The test object is retained in a holder in which the orientation of the test device or target can be readily changed, to properly complete the testing requirements.

  18. Pendulum detector testing device

    DOE Patents [OSTI]

    Gonsalves, J.M.

    1997-09-30

    A detector testing device is described which provides consistent, cost-effective, repeatable results. The testing device is primarily constructed of PVC plastic and other non-metallic materials. Sensitivity of a walk-through detector system can be checked by: (1) providing a standard test object simulating the mass, size and material content of a weapon or other contraband, (2) suspending the test object in successive positions, such as head, waist and ankle levels, simulating where the contraband might be concealed on a person walking through the detector system; and (3) swinging the suspended object through each of the positions, while operating the detector system and observing its response. The test object is retained in a holder in which the orientation of the test device or target can be readily changed, to properly complete the testing requirements. 5 figs.

  19. Biochip scanner device

    DOE Patents [OSTI]

    Perov, Alexander; Belgovskiy, Alexander I.; Mirzabekov, Andrei D.

    2001-01-01

    A biochip scanner device used to detect and acquire fluorescence signal data from biological microchips or biochips and method of use are provided. The biochip scanner device includes a laser for emitting a laser beam. A modulator, such as an optical chopper modulates the laser beam. A scanning head receives the modulated laser beam and a scanning mechanics coupled to the scanning head moves the scanning head relative to the biochip. An optical fiber delivers the modulated laser beam to the scanning head. The scanning head collects the fluorescence light from the biochip, launches it into the same optical fiber, which delivers the fluorescence into a photodetector, such as a photodiode. The biochip scanner device is used in a row scanning method to scan selected rows of the biochip with the laser beam size matching the size of the immobilization site.

  20. Ion manipulation device

    DOE Patents [OSTI]

    Anderson, Gordon A; Smith, Richard D; Ibrahim, Yehia M; Baker, Erin M

    2014-09-16

    An ion manipulation method and device is disclosed. The device includes a pair of substantially parallel surfaces. An array of inner electrodes is contained within, and extends substantially along the length of, each parallel surface. The device includes a first outer array of electrodes and a second outer array of electrodes. Each outer array of electrodes is positioned on either side of the inner electrodes, and is contained within and extends substantially along the length of each parallel surface. A DC voltage is applied to the first and second outer array of electrodes. A RF voltage, with a superimposed electric field, is applied to the inner electrodes by applying the DC voltages to each electrode. Ions either move between the parallel surfaces within an ion confinement area or along paths in the direction of the electric field, or can be trapped in the ion confinement area.

  1. Regenerative combustion device

    DOE Patents [OSTI]

    West, Phillip B.

    2004-03-16

    A regenerative combustion device having a combustion zone, and chemicals contained within the combustion zone, such as water, having a first equilibrium state, and a second combustible state. Means for transforming the chemicals from the first equilibrium state to the second combustible state, such as electrodes, are disposed within the chemicals. An igniter, such as a spark plug or similar device, is disposed within the combustion zone for igniting combustion of the chemicals in the second combustible state. The combustion products are contained within the combustion zone, and the chemicals are selected such that the combustion products naturally chemically revert into the chemicals in the first equilibrium state following combustion. The combustion device may thus be repeatedly reused, requiring only a brief wait after each ignition to allow the regeneration of combustible gasses within the head space.

  2. Electronic Band Structure And Kondo Coupling in YbRh(2)Si(2)

    SciTech Connect (OSTI)

    Wigger, G.A.; Baumberger, F.; Shen, Z.X.; Yin, Z.P.; Pickett, W.E.; Maquilon, S.; Fisk, Z.; /UC, Davis

    2007-09-26

    The electronic band structure of YbRh{sub 2}Si{sub 2} is calculated in a relativistic framework including correlation corrections and magnetization of the Yb ion and compared to detailed angle-resolved photoemission spectra. The photoemission spectra for LuRh{sub 2}Si{sub 2} are used as reference to identify electronic bands with no f symmetry. The calculated band structure manifests a 4f{sup 13} spin-polarized configuration leaving the unoccupied state at 1.4 eV above the Fermi energy. At the band theory level, the 4f bands are located far below the Fermi level and the anisotropic Coulomb interaction within the 4f shell spreads the multilevel into broader 4f complexes below -2.5 eV. The photoemission spectra obtained on YbRh2Si2 show a clear f-multilevel splitting into j=7/2 and 5/2 excitations. The interaction of the 4f{sub 7/2} levels close to the Fermi energy with two conduction bands shows visible hybridization gaps of 45 and 80 meV, respectively. We discuss the origin of these excitations and provide an analysis according to Anderson's single-impurity model with parameters suggested by the band-structure calculation and the photoemission spectra. Both experiment and theory indicate nearly identical Fermi surfaces for LuRh{sub 2}Si{sub 2} and YbRh{sub 2}Si{sub 2}. The valency of Yb in YbRh{sub 2}Si{sub 2} is estimated to be close to +3.

  3. One-photon band gap engineering of borate glass doped with ZnO for photonics applications

    SciTech Connect (OSTI)

    Abdel-Baki, Manal; Abdel-Wahab, Fathy A.; El-Diasty, Fouad

    2012-04-01

    Lithium tungsten borate glass of the composition (0.56-x)B{sub 2}O{sub 3}-0.4Li{sub 2}O-xZnO-0.04WO{sub 3} (0 {<=}x{<=} 0.1 mol. %) is prepared for photonics applications. The glass is doped with ZnO to tune the glass absorption characteristics in a wide spectrum range (200-2500 nm). Chemical bond approach, including chemical structure, electronegativity, bond ionicity, nearest-neighbor coordination, and other chemical bonding aspect, is used to analyze and to explain the obtained glass properties such as: transmittance, absorption, electronic structure parameters (bandgap, Fermi level, and Urbach exciton-phonon coupling), Wannier free excitons excitation (applying Elliott's model), and two-photon absorption coefficient as a result of replacement of B{sub 2}O{sub 3} by ZnO.

  4. Continuum absorption in the vicinity of the toroidicity-induced Alfvén gap

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, M.; Breizman, B. N.; Zheng, L. J.; Chen, Eugene Y.

    2015-12-04

    Excitation of Alfvén modes is commonly viewed as a concern for energetic particle confinement in burning plasmas. The 3.5 MeValpha particles produced by fusion may be affected as well as other fast ions in both present and future devices. Continuum damping of such modes is one of the key factors that determine their excitation thresholds and saturation levels. This work examines the resonant dissipative response of the Alfvén continuum to an oscillating driving current when the driving frequency is slightly outside the edges of the toroidicity-induced spectral gap. The problem is largely motivated by the need to describe the continuummore » absorption in the frequency sweeping events. Akey element of this problem is the negative interference of the two closely spaced continuum crossing points.Weexplain why the lower and upper edges of the gap can have very different continuum absorption features. Lastly, the difference is associated with an eigenmode whose frequency can be arbitrarily close to the upper edge of the gap whereas the lower edge of the gap is always a finite distance away from the closest eigenmode.« less

  5. Continuum absorption in the vicinity of the toroidicity-induced Alfvén gap

    SciTech Connect (OSTI)

    Li, M.; Breizman, B. N.; Zheng, L. J.; Chen, Eugene Y.

    2015-12-04

    Excitation of Alfvén modes is commonly viewed as a concern for energetic particle confinement in burning plasmas. The 3.5 MeValpha particles produced by fusion may be affected as well as other fast ions in both present and future devices. Continuum damping of such modes is one of the key factors that determine their excitation thresholds and saturation levels. This work examines the resonant dissipative response of the Alfvén continuum to an oscillating driving current when the driving frequency is slightly outside the edges of the toroidicity-induced spectral gap. The problem is largely motivated by the need to describe the continuum absorption in the frequency sweeping events. Akey element of this problem is the negative interference of the two closely spaced continuum crossing points.Weexplain why the lower and upper edges of the gap can have very different continuum absorption features. Lastly, the difference is associated with an eigenmode whose frequency can be arbitrarily close to the upper edge of the gap whereas the lower edge of the gap is always a finite distance away from the closest eigenmode.

  6. Dipole Bands in {sup 196}Hg

    SciTech Connect (OSTI)

    Lawrie, J. J.; Lawrie, E. A.; Newman, R. T.; Sharpey-Schafer, J. F.; Smit, F. D.; Msezane, B.; Benatar, M.; Mabala, G. K.; Mutshena, K. P.; Federke, M.; Mullins, S. M.; Ncapayi, N. J.; Vymers, P.

    2011-10-28

    High spin states in {sup 196}Hg have been populated in the {sup 198}Pt({alpha},6n) reaction at 65 MeV and the level scheme has been extended. A new dipole band has been observed and a previously observed dipole has been confirmed. Excitation energies, spins and parities of these bands were determined from DCO ratio and linear polarization measurements. Possible quasiparticle excitations responsible for these structures are discussed.

  7. Functional Area Qualification Standard Gap Analysis Qualification Cards

    Broader source: Energy.gov [DOE]

    FAQS Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  8. Minority Serving Institutions (MSIs): Bridging the Gap between Federal

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Agencies and MSIs | Department of Energy Minority Serving Institutions (MSIs): Bridging the Gap between Federal Agencies and MSIs Minority Serving Institutions (MSIs): Bridging the Gap between Federal Agencies and MSIs Different Minority Serving institutions PDF icon Minority Serving Institutions (MSIs): Bridging the Gap between Federal Agencies and MSIs More Documents & Publications Bridging the Gap Between Federal Agencies and MSIs Research and Services at the Alabama A&M

  9. FAQS Gap Analysis Qualification Card - Waste Management | Department of

    Office of Environmental Management (EM)

    Energy Technical Training FAQS Gap Analysis Qualification Card - Technical Training Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard. File Technical Training Gap Analysis Qualification Card More Documents & Publications DOE-STD-1179-2004 DOE-HDBK-1078-94 FAQS Reference Guide - Technical Training Energy

    Waste Management FAQS Gap Analysis Qualification Card - Waste Management

  10. Technical Standards, MELCOR - Gap Analysis - May 3, 2004 | Department of

    Office of Environmental Management (EM)

    Energy MELCOR - Gap Analysis - May 3, 2004 Technical Standards, MELCOR - Gap Analysis - May 3, 2004 May 3, 2004 Software Quality Assurance Improvement Plan: MELCOR Gap Analysis This report documents the outcome of an evaluation of the Software Quality Assurance (SQA) attributes of the MELCOR computer code for leak path factor applications, relative to established software requirements. This evaluation, a "gap analysis," is performed to meet Commitment 4.2.1.3 of the Department of

  11. ROTATING PLASMA DEVICE

    DOE Patents [OSTI]

    Boyer, K.; Hammel, J.E.; Longmire, C.L.; Nagle, D.E.; Ribe, F.L.; Tuck, J.L.

    1961-10-24

    ABS>A method and device are described for obtaining fusion reactions. The basic concept is that of using crossed electric and magnetic fields to induce a plasma rotation in which the ionized particles follow a circumferential drift orbit on wldch a cyclotron mode of motion is superimposed, the net result being a cycloidal motion about the axis of symmetry. The discharge tube has a radial electric field and a longitudinal magnetic field. Mirror machine geometry is utilized. The device avoids reliance on the pinch effect and its associated instability problems. (AEC)

  12. REMOTE CONTROLLED SWITCHING DEVICE

    DOE Patents [OSTI]

    Hobbs, J.C.

    1959-02-01

    An electrical switching device which can be remotely controlled and in which one or more switches may be accurately operated at predetermined times or with predetermined intervening time intervals is described. The switching device consists essentially of a deck, a post projecting from the deck at right angles thereto, cam means mounted for rotation around said posts and a switch connected to said deck and actuated by said cam means. Means is provided for rotating the cam means at a constant speed and the switching apparatus is enclosed in a sealed container with external adjusting means and electrical connection elements.

  13. Asphaltene based photovoltaic devices

    DOE Patents [OSTI]

    Chianelli, Russell R.; Castillo, Karina; Gupta, Vipin; Qudah, Ali M.; Torres, Brenda; Abujnah, Rajib E.

    2016-03-22

    Photovoltaic devices and methods of making the same, are disclosed herein. The cell comprises a photovoltaic device that comprises a first electrically conductive layer comprising a photo-sensitized electrode; at least one photoelectrochemical layer comprising metal-oxide particles, an electrolyte solution comprising at least one asphaltene fraction, wherein the metal-oxide particles are optionally dispersed in a surfactant; and a second electrically conductive layer comprising a counter-electrode, wherein the second electrically conductive layer comprises one or more conductive elements comprising carbon, graphite, soot, carbon allotropes or any combinations thereof.

  14. Dielectrophoretic columnar focusing device

    DOE Patents [OSTI]

    James, Conrad D. (Albuquerque, NM); Galambos, Paul C. (Albuquerque, NM); Derzon, Mark S. (Tijeras, NM)

    2010-05-11

    A dielectrophoretic columnar focusing device uses interdigitated microelectrodes to provide a spatially non-uniform electric field in a fluid that generates a dipole within particles in the fluid. The electric field causes the particles to either be attracted to or repelled from regions where the electric field gradient is large, depending on whether the particles are more or less polarizable than the fluid. The particles can thereby be forced into well defined stable paths along the interdigitated microelectrodes. The device can be used for flow cytometry, particle control, and other process applications, including cell counting or other types of particle counting, and for separations in material control.

  15. Phononic crystal devices

    DOE Patents [OSTI]

    El-Kady, Ihab F.; Olsson, Roy H.

    2012-01-10

    Phononic crystals that have the ability to modify and control the thermal black body phonon distribution and the phonon component of heat transport in a solid. In particular, the thermal conductivity and heat capacity can be modified by altering the phonon density of states in a phononic crystal. The present invention is directed to phononic crystal devices and materials such as radio frequency (RF) tags powered from ambient heat, dielectrics with extremely low thermal conductivity, thermoelectric materials with a higher ratio of electrical-to-thermal conductivity, materials with phononically engineered heat capacity, phononic crystal waveguides that enable accelerated cooling, and a variety of low temperature application devices.

  16. Precision alignment device

    DOE Patents [OSTI]

    Jones, N.E.

    1988-03-10

    Apparatus for providing automatic alignment of beam devices having an associated structure for directing, collimating, focusing, reflecting, or otherwise modifying the main beam. A reference laser is attached to the structure enclosing the main beam producing apparatus and produces a reference beam substantially parallel to the main beam. Detector modules containing optical switching devices and optical detectors are positioned in the path of the reference beam and are effective to produce an electrical output indicative of the alignment of the main beam. This electrical output drives servomotor operated adjustment screws to adjust the position of elements of the structure associated with the main beam to maintain alignment of the main beam. 5 figs.

  17. Precision alignment device

    DOE Patents [OSTI]

    Jones, Nelson E.

    1990-01-01

    Apparatus for providing automatic alignment of beam devices having an associated structure for directing, collimating, focusing, reflecting, or otherwise modifying the main beam. A reference laser is attached to the structure enclosing the main beam producing apparatus and produces a reference beam substantially parallel to the main beam. Detector modules containing optical switching devices and optical detectors are positioned in the path of the reference beam and are effective to produce an electrical output indicative of the alignment of the main beam. This electrical output drives servomotor operated adjustment screws to adjust the position of elements of the structure associated with the main beam to maintain alignment of the main beam.

  18. Precision positioning device

    DOE Patents [OSTI]

    McInroy, John E.

    2005-01-18

    A precision positioning device is provided. The precision positioning device comprises a precision measuring/vibration isolation mechanism. A first plate is provided with the precision measuring mean secured to the first plate. A second plate is secured to the first plate. A third plate is secured to the second plate with the first plate being positioned between the second plate and the third plate. A fourth plate is secured to the third plate with the second plate being positioned between the third plate and the fourth plate. An adjusting mechanism for adjusting the position of the first plate, the second plate, the third plate, and the fourth plate relative to each other.

  19. EXPERIMENTAL ANIMAL WATERING DEVICE

    DOE Patents [OSTI]

    Finkel, M.P.

    1964-04-01

    A device for watering experimental animals confined in a battery of individual plastic enclosures is described. It consists of a rectangular plastic enclosure having a plurality of fluid-tight compartments, each with a drinking hole near the bottom and a filling hole on the top. The enclosure is immersed in water until filled, its drinking holes sealed with a strip of tape, and it is then placed in the battery. The tape sealing prevents the flow of water from the device, but permits animals to drink by licking the drinking holes. (AEC)

  20. Dielectrokinetic chromatography and devices thereof (Patent)...

    Office of Scientific and Technical Information (OSTI)

    Dielectrokinetic chromatography and devices thereof Title: Dielectrokinetic chromatography and devices thereof Disclosed herein are methods and devices for dielectrokinetic ...

  1. Quantum chaos and thermalization in gapped systems

    SciTech Connect (OSTI)

    Rigol, Marcos [Department of Physics, Georgetown University, Washington, DC 20057 (United States); Santos, Lea F. [Department of Physics, Yeshiva University, New York, New York 10016 (United States)

    2010-07-15

    We investigate the onset of thermalization and quantum chaos in finite one-dimensional gapped systems of hard-core bosons. Integrability in these systems is broken by next-nearest-neighbor repulsive interactions, which also generate a superfluid to insulator transition. By employing full exact diagonalization, we study chaos indicators and few-body observables. We show that with increasing system size, chaotic behavior is seen over a broader range of parameters and, in particular, deeper into the insulating phase. Concomitantly, we observe that, as the system size increases, the eigenstate thermalization hypothesis extends its range of validity inside the insulating phase and is accompanied by the thermalization of the system.

  2. Turbine blade tip gap reduction system

    DOE Patents [OSTI]

    Diakunchak, Ihor S.

    2012-09-11

    A turbine blade sealing system for reducing a gap between a tip of a turbine blade and a stationary shroud of a turbine engine. The sealing system includes a plurality of flexible seal strips extending from a pressure side of a turbine blade generally orthogonal to the turbine blade. During operation of the turbine engine, the flexible seal strips flex radially outward extending towards the stationary shroud of the turbine engine, thereby reducing the leakage of air past the turbine blades and increasing the efficiency of the turbine engine.

  3. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires

    SciTech Connect (OSTI)

    Guo, Shaojun; Andrew F. Fidler; He, Kai; Su, Dong; Chen, Gen; Lin, Qianglu; Pietryga, Jeffrey M.; Klimov, Victor I.

    2015-11-06

    In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and thermoelectric devices. SnTe NCs are particularly attractive as a Pb-free alternative to NCs of narrow-gap lead chalcogenides. Previous synthetic efforts on SnTe NCs have focused on spherical nanoparticles. Here we report new strategies for synthesis of SnTe NCs with shapes tunable from highly monodisperse nanocubes, to nanorods (NRs) with variable aspect ratios, and finally to long, straight nanowires (NWs). Reaction at high temperature quickly forms thermodynamically favored nanocubes, but low temperatures lead to elongated particles. Transmission electron microscopy studies of reaction products at various stages of the synthesis reveal that the growth and shape-focusing of monodisperse SnTe nanocubes likely involves interparticle ripening, while directional growth of NRs and NWs may be initiated by particle dimerization via oriented attachment.

  4. ANNULAR IMPACTOR SAMPLING DEVICE

    DOE Patents [OSTI]

    Tait, G.W.C.

    1959-03-31

    A high-rate air sampler capable of sampling alphaemitting particles as small as 0.5 microns is described. The device is a cylindrical shaped cup that fits in front of a suction tube and which has sticky grease coating along its base. Suction forces contaminated air against the periodically monitored particle absorbing grease.

  5. LOADING AND UNLOADING DEVICE

    DOE Patents [OSTI]

    Treshow, M.

    1960-08-16

    A device for loading and unloading fuel rods into and from a reactor tank through an access hole includes parallel links carrying a gripper. These links enable the gripper to go through the access hole and then to be moved laterally from the axis of the access hole to the various locations of the fuel rods in the reactor tank.

  6. RADIO RANGING DEVICE

    DOE Patents [OSTI]

    Nieset, R.T.

    1961-05-16

    A radio ranging device is described. It utilizes a super regenerative detector-oscillator in which echoes of transmitted pulses are received in proper phase to reduce noise energy at a selected range and also at multiples of the selected range.

  7. RADIO RANGING DEVICE

    DOE Patents [OSTI]

    Bogle, R.W.

    1960-11-22

    A description is given of a super-regenerative oscillator ranging device provided with radiating and receiving means and being capable of indicating the occurrence of that distance between itself and a reflecting object which so phases the received echo of energy of a preceding emitted oscillation that the intervals between oscillations become uniform.

  8. Solar Innovator | Alta Devices

    ScienceCinema (OSTI)

    Mattos, Laila; Le, Minh

    2013-05-29

    Selected to participate in the Energy Department's SunShot Initiative, Alta Devices produces solar cells that convert sunlight into electricity at world record-breaking levels of efficiency. Through its innovative solar technology Alta is helping bring down the cost of solar. Learn more about the Energy Department's efforts to advance solar technology at energy.gov/solar .

  9. Cascaded thermoacoustic devices

    DOE Patents [OSTI]

    Swift, Gregory W.; Backhaus, Scott N.; Gardner, David L.

    2003-12-09

    A thermoacoustic device is formed with a resonator system defining at least one region of high specific acoustic impedance in an acoustic wave within the resonator system. A plurality of thermoacoustic units are cascaded together within the region of high specific acoustic impedance, where at least one of the thermoacoustic units is a regenerator unit.

  10. Condensate removal device

    DOE Patents [OSTI]

    Maddox, James W.; Berger, David D.

    1984-01-01

    A condensate removal device is disclosed which incorporates a strainer in unit with an orifice. The strainer is cylindrical with its longitudinal axis transverse to that of the vapor conduit in which it is mounted. The orifice is positioned inside the strainer proximate the end which is remoter from the vapor conduit.

  11. Device configuration-management system

    SciTech Connect (OSTI)

    Nowell, D.M.

    1981-01-01

    The Fusion Chamber System, a major component of the Magnetic Fusion Test Facility, contains several hundred devices which report status to the Supervisory Control and Diagnostic System for control and monitoring purposes. To manage the large number of diversity of devices represented, a device configuration management system was required and developed. Key components of this software tool include the MFTF Data Base; a configuration editor; and a tree structure defining the relationships between the subsystem devices. This paper will describe how the configuration system easily accomodates recognizing new devices, restructuring existing devices, and modifying device profile information.

  12. Next Generation Nuclear Plant GAP Analysis Report

    SciTech Connect (OSTI)

    Ball, Sydney J; Burchell, Timothy D; Corwin, William R; Fisher, Stephen Eugene; Forsberg, Charles W.; Morris, Robert Noel; Moses, David Lewis

    2008-12-01

    As a follow-up to the phenomena identification and ranking table (PIRT) studies conducted recently by NRC on next generation nuclear plant (NGNP) safety, a study was conducted to identify the significant 'gaps' between what is needed and what is already available to adequately assess NGNP safety characteristics. The PIRT studies focused on identifying important phenomena affecting NGNP plant behavior, while the gap study gives more attention to off-normal behavior, uncertainties, and event probabilities under both normal operation and postulated accident conditions. Hence, this process also involved incorporating more detailed evaluations of accident sequences and risk assessments. This study considers thermal-fluid and neutronic behavior under both normal and postulated accident conditions, fission product transport (FPT), high-temperature metals, and graphite behavior and their effects on safety. In addition, safety issues related to coupling process heat (hydrogen production) systems to the reactor are addressed, given the limited design information currently available. Recommendations for further study, including analytical methods development and experimental needs, are presented as appropriate in each of these areas.

  13. Prediction of a strain-induced conduction-band minimum in embedded quantum dots

    SciTech Connect (OSTI)

    Williamson, A.J.; Zunger, A.; Canning, A.

    1998-02-01

    Free-standing InP quantum dots have previously been theoretically and experimentally shown to have a direct band gap across a large range of experimentally accessible sizes. We demonstrated that when these dots are embedded coherently within a GaP barrier material, the effects of quantum confinement in conjunction with coherent strain suggest there will be a critical diameter of dot ({approx}60 {Angstrom}), above which the dot is direct, type I, and below which it is indirect, type II. However, the strain in the system acts to produce another conduction state with an even lower energy, in which electrons are localized in small pockets at the interface between the InP dot and the GaP barrier. Since this conduction state is GaP X{sub 1c} derived and the highest occupied valence state is InP, {Gamma} derived, the fundamental transition is predicted to be indirect in both real and reciprocal space ({open_quotes}type II{close_quotes}) for all dot sizes. This effect is peculiar to the strained dot, and is absent in the freestanding dot. {copyright} {ital 1998} {ital The American Physical Society}

  14. Performance characteristics of a perforated shadow band under clear sky conditions

    SciTech Connect (OSTI)

    Brooks, Michael J.

    2010-12-15

    A perforated, non-rotating shadow band is described for separating global solar irradiance into its diffuse and direct normal components using a single pyranometer. Whereas shadow bands are normally solid so as to occult the sensor of a pyranometer throughout the day, the proposed band has apertures cut from its circumference to intermittently expose the instrument sensor at preset intervals. Under clear sky conditions the device produces a saw tooth waveform of irradiance data from which it is possible to reconstruct separate global and diffuse curves. The direct normal irradiance may then be calculated giving a complete breakdown of the irradiance curves without need of a second instrument or rotating shadow band. This paper describes the principle of operation of the band and gives a mathematical model of its shading mask based on the results of an optical ray tracing study. An algorithm for processing the data from the perforated band system is described and evaluated. In an extended trial conducted at NREL's Solar Radiation Research Laboratory, the band coupled with a thermally corrected Eppley PSP produced independent curves for diffuse, global and direct normal irradiance with low mean bias errors of 5.6 W/m{sup 2}, 0.3 W/m{sup 2} and -2.6 W/m{sup 2} respectively, relative to collocated reference instruments. Random uncertainties were 9.7 W/m{sup 2} (diffuse), 17.3 W/m{sup 2} (global) and 19.0 W/m{sup 2} (direct). When the data processing algorithm was modified to include the ray trace model of sensor exposure, uncertainties increased only marginally, confirming the effectiveness of the model. Deployment of the perforated band system can potentially increase the accuracy of data from ground stations in predominantly sunny areas where instrumentation is limited to a single pyranometer. (author)

  15. Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhou, Miao; Ming, Wenmei; Liu, Zheng; Wang, Zhengfei; Yao, Yugui; Liu, Feng

    2014-11-19

    For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approach to create the large-gap 2D TI state on a semiconductor surface, based on first-principles calculations and effective Hamiltonian analysis. We show that when heavy elements with strong spin orbit coupling (SOC) such as Bi and Pb atoms are deposited on a patterned H-Si(111) surface into a hexagonal lattice, they exhibit a 2D TI state with a large energy gap of ≥0.5more » eV. The TI state arises from an intriguing substrate orbital filtering effect that selects a suitable orbital composition around the Fermi level, so that the system can be matched onto a four-band effective model Hamiltonian. Furthermore, it is found that within this model, the SOC gap does not increase monotonically with the increasing strength of SOC. These interesting results may shed new light in future design and fabrication of large-gap topological quantum states.« less

  16. Recent experimental results from a long-pulse J-band relativistic klystron amplifier developmental effort

    SciTech Connect (OSTI)

    Kato, K.G.; Crouch, D.D.; Sar, D.R.; Speciale, R.A.; Carlsten, B.E.; Fazio, M.V.; Haynes, W.B.; Stringfield, R.M.

    1994-12-31

    Recent experimental results, supporting simulations, and design modeling are presented from a developmental effort to a produce a long pulse ({approximately}1{mu}s) J-band (5.85-8.2 GHz) relativistic klystron amplifier (RKA) of the high current NRL genealogy. This RKA is designed to operate at approximately 6.6 GHz, with a desired RF output {approximately}700 MW. Conversion of electron beam energy to microwave energy is obtained by a mock magnetically insulated coaxial converter which, in various incarnations, can be made to be either a cavity gap extractor or an inverse cathode.

  17. First principles electronic band structure and phonon dispersion curves for zinc blend beryllium chalcogenide

    SciTech Connect (OSTI)

    Dabhi, Shweta Mankad, Venu Jha, Prafulla K.

    2014-04-24

    A detailed theoretical study of structural, electronic and Vibrational properties of BeX compound is presented by performing ab-initio calculations based on density-functional theory using the Espresso package. The calculated value of lattice constant and bulk modulus are compared with the available experimental and other theoretical data and agree reasonably well. BeX (X = S,Se,Te) compounds in the ZB phase are indirect wide band gap semiconductors with an ionic contribution. The phonon dispersion curves are represented which shows that these compounds are dynamically stable in ZB phase.

  18. Band Excitation Method Applicable to Scanning Probe Microscopy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    includes a band excitation signal generator; a probe coupled to the band excitation signal generator; a detector coupled to the probe; and a relevant dynamic parameter...

  19. Modeling fluid flow in deformation bands with stabilized localization...

    Office of Scientific and Technical Information (OSTI)

    Modeling fluid flow in deformation bands with stabilized localization mixed finite elements. Citation Details In-Document Search Title: Modeling fluid flow in deformation bands...

  20. Band excitation method applicable to scanning probe microscopy...

    Office of Scientific and Technical Information (OSTI)

    Data Explorer Search Results Band excitation method applicable to scanning probe microscopy Title: Band excitation method applicable to scanning probe microscopy Methods and ...

  1. IR Spectral Bands and Performance | Open Energy Information

    Open Energy Info (EERE)

    2013 DOI Not Provided Check for DOI availability: http:crossref.org Online Internet link for IR Spectral Bands and Performance Citation Chris Douglass. IR Spectral Bands...

  2. Wire brush fastening device

    DOE Patents [OSTI]

    Meigs, R.A.

    1995-09-19

    A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus. 13 figs.

  3. Regenerative braking device

    DOE Patents [OSTI]

    Hoppie, Lyle O.

    1982-01-12

    Disclosed are several embodiments of a regenerative braking device for an automotive vehicle. The device includes a plurality of rubber rollers (24, 26) mounted for rotation between an input shaft (14) connectable to the vehicle drivetrain and an output shaft (16) which is drivingly connected to the input shaft by a variable ratio transmission (20). When the transmission ratio is such that the input shaft rotates faster than the output shaft, the rubber rollers are torsionally stressed to accumulate energy, thereby slowing the vehicle. When the transmission ratio is such that the output shaft rotates faster than the input shaft, the rubber rollers are torsionally relaxed to deliver accumulated energy, thereby accelerating or driving the vehicle.

  4. Cable shield connecting device

    DOE Patents [OSTI]

    Silva, Frank A.

    1979-01-01

    A cable shield connecting device for installation on a high voltage cable of the type having a metallic shield, the device including a relatively conformable, looped metal bar for placement around a bared portion of the metallic shield to extend circumferentially around a major portion of the circumference of the metallic shield while being spaced radially therefrom, a plurality of relatively flexible metallic fingers affixed to the bar, projecting from the bar in an axial direction and spaced circumferentially along the bar, each finger being attached to the metallic shield at a portion located remote from the bar to make electrical contact with the metallic shield, and a connecting conductor integral with the bar.

  5. Dielectrokinetic chromatography devices

    DOE Patents [OSTI]

    Chirica, Gabriela S; Fiechtner, Gregory J; Singh, Anup K

    2014-12-16

    Disclosed herein are methods and devices for dielectrokinetic chromatography. As disclosed, the devices comprise microchannels having at least one perturber which produces a non-uniformity in a field spanning the width of the microchannel. The interaction of the field non-uniformity with a perturber produces a secondary flow which competes with a primary flow. By decreasing the size of the perturber the secondary flow becomes significant for particles/analytes in the nanometer-size range. Depending on the nature of a particle/analyte present in the fluid and its interaction with the primary flow and the secondary flow, the analyte may be retained or redirected. The composition of the primary flow can be varied to affect the magnitude of primary and/or secondary flows on the particles/analytes and thereby separate and concentrate it from other particles/analytes.

  6. Light modulating device

    DOE Patents [OSTI]

    Rauh, R. David; Goldner, Ronald B.

    1989-01-01

    In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity.

  7. Portable biochip scanner device

    DOE Patents [OSTI]

    Perov, Alexander; Sharonov, Alexei; Mirzabekov, Andrei D.

    2002-01-01

    A portable biochip scanner device used to detect and acquire fluorescence signal data from biological microchips (biochips) is provided. The portable biochip scanner device employs a laser for emitting an excitation beam. An optical fiber delivers the laser beam to a portable biochip scanner. A lens collimates the laser beam, the collimated laser beam is deflected by a dichroic mirror and focused by an objective lens onto a biochip. The fluorescence light from the biochip is collected and collimated by the objective lens. The fluorescence light is delivered to a photomultiplier tube (PMT) via an emission filter and a focusing lens. The focusing lens focuses the fluorescence light into a pinhole. A signal output of the PMT is processed and displayed.

  8. Light modulating device

    DOE Patents [OSTI]

    Rauh, R.D.; Goldner, R.B.

    1989-12-26

    In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity are disclosed. 1 fig.

  9. Quick stop device

    DOE Patents [OSTI]

    Hipwell, Roger L. (35 Hounds Ditch La., Duxbury, MA 02332); Hazelton, Andrew J. (3877 Army St., San Francisco, CA 94131)

    1996-01-01

    A quick stop device for abruptly interrupting the cutting of a workpiece by a cutter is disclosed. The quick stop device employs an outer housing connected to an inner workpiece holder by at least one shear pin. The outer housing includes an appropriate shank designed to be received in the spindle of a machine, such as a machine tool. A cutter, such as a drill bit, is mounted in a stationary position and the workpiece, mounted to the workpiece holder, is rotated during engagement with the cutter. A trigger system includes at least one spring loaded punch disposed for movement into engagement with the workpiece holder to abruptly stop rotation of the workpiece holder. This action shears the shear pin and permits continued rotation of the spindle and outer housing without substantially disturbing the chip root formed during cutting.

  10. Stacked organic photosensitive devices

    DOE Patents [OSTI]

    Forrest, Stephen; Xue, Jiangeng; Uchida, Soichi; Rand, Barry P.

    2007-03-27

    A device is provided having a first electrode, a second electrode, a first photoactive region having a characteristic absorption wavelength .lamda..sub.1 and a second photoactive region having a characteristic absorption wavelength .lamda..sub.2. The photoactive regions are disposed between the first and second electrodes, and further positioned on the same side of a reflective layer, such that the first photoactive region is closer to the reflective layer than the second photoactive region. The materials comprising the photoactive regions may be selected such that .lamda..sub.1 is at least about 10% different from .lamda..sub.2. The device may further comprise an exciton blocking layer disposed adjacent to and in direct contact with the organic acceptor material of each photoactive region, wherein the LUMO of each exciton blocking layer other than that closest to the cathode is not more than about 0.3 eV greater than the LUMO of the acceptor material.

  11. Organic photosensitive devices

    DOE Patents [OSTI]

    Peumans, Peter; Forrest, Stephen R.

    2013-01-22

    A photoactive device is provided. The device includes a first electrode, a second electrode, and a photoactive region disposed between and electrically connected to the first and second electrodes. The photoactive region further includes an organic donor layer and an organic acceptor layer that form a donor-acceptor heterojunction. The mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region are different by a factor of at least 100, and more preferably a factor of at least 1000. At least one of the mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region is greater than 0.001 cm.sup.2/V-sec, and more preferably greater than 1 cm.sup.2/V-sec. The heterojunction may be of various types, including a planar heterojunction, a bulk heterojunction, a mixed heterojunction, and a hybrid planar-mixed heterojunction.

  12. Particle capture device

    DOE Patents [OSTI]

    Jayne, John T.; Worsnop, Douglas R.

    2016-02-23

    In example embodiments, particle collection efficiency in aerosol analyzers and other particle measuring instruments is improved by a particle capture device that employs multiple collisions to decrease momentum of particles until the particles are collected (e.g., vaporized or come to rest). The particle collection device includes an aperture through which a focused particle beam enters. A collection enclosure is coupled to the aperture and has one or more internal surfaces against which particles of the focused beam collide. One or more features are employed in the collection enclosure to promote particles to collide multiple times within the enclosure, and thereby be vaporized or come to rest, rather than escape through the aperture.

  13. Support and maneuvering device

    DOE Patents [OSTI]

    Wood, R.L.

    1987-03-23

    A support and maneuvering device includes an elongated flexible inflatable enclosure having a fixed end and a movable end. The movable end is collapsible toward the fixed end to a contracted position when the enclosure is in a noninflated condition. Upon inflation, the movable end is movable away from the fixed end to an extended position. The movable end includes means for mounting an article such as a solar reflector thereon. The device also includes a plurality of position controlling means disposed about the movable end to effect adjusting movement of portions thereof by predetermined amounts and for controlling an angle at which the article disposed at the movable end is oriented. The plurality of position controlling means limits a suitable number degrees of freedom of the movable end for transmitting a steering motion thereto and for controlling the position thereof. 9 figs.

  14. Support and maneuvering device

    DOE Patents [OSTI]

    Wood, Richard L.

    1988-01-01

    A support and maneuvering device includes an elongated flexible inflatable enclosure having a fixed end and a movable end. The movable end is collapsible toward the fixed end to a contracted position when the enclosure is in a noninflated condition. Upon inflation, the movable end is movable away from the fixed end to an extended position. The movable end includes means for mounting an article such as a solar reflector thereon. The device also includes a plurality of position controlling means disposed about the movable end to effect adjusting movement of portions thereof by predetermined amounts and for controlling an angle at which the article disposed at the movable end is oriented. The plurality of position controlling means limits a suitable number degrees of freedom of the movable end for transmitting a steering motion thereto and for controlling the position thereof.

  15. Microelectromechanical safe arm device

    DOE Patents [OSTI]

    Roesler, Alexander W.

    2012-06-05

    Microelectromechanical (MEM) apparatus and methods for operating, for preventing unintentional detonation of energetic components comprising pyrotechnic and explosive materials, such as air bag deployment systems, munitions and pyrotechnics. The MEM apparatus comprises an interrupting member that can be moved to block (interrupt) or complete (uninterrupt) an explosive train that is part of an energetic component. One or more latching members are provided that engage and prevent the movement of the interrupting member, until the one or more latching members are disengaged from the interrupting member. The MEM apparatus can be utilized as a safe and arm device (SAD) and electronic safe and arm device (ESAD) in preventing unintentional detonations. Methods for operating the MEM apparatus include independently applying drive signals to the actuators coupled to the latching members, and an actuator coupled to the interrupting member.

  16. Nuclear reactor safety device

    DOE Patents [OSTI]

    Hutter, Ernest (Wilmette, IL)

    1986-01-01

    A safety device is disclosed for use in a nuclear reactor for axially repositioning a control rod with respect to the reactor core in the event of an upward thermal excursion. Such safety device comprises a laminated helical ribbon configured as a tube-like helical coil having contiguous helical turns with slidably abutting edges. The helical coil is disclosed as a portion of a drive member connected axially to the control rod. The laminated ribbon is formed of outer and inner laminae. The material of the outer lamina has a greater thermal coefficient of expansion than the material of the inner lamina. In the event of an upward thermal excursion, the laminated helical coil curls inwardly to a smaller diameter. Such inward curling causes the total length of the helical coil to increase by a substantial increment, so that the control rod is axially repositioned by a corresponding amount to reduce the power output of the reactor.

  17. Tire deflation device

    DOE Patents [OSTI]

    Barker, Stacey G. (Idaho Falls, ID) [Idaho Falls, ID

    2010-01-05

    A tire deflation device includes (1) a component having a plurality of bores, (2) a plurality of spikes removably insertable into the plurality of bores and (3) a keeper within each among the plurality of bores, the keeper being configured to contact a sidewall surface of a spike among the plurality of spikes and to exert force upon the sidewall surface. In an embodiment, the tire deflation device includes (a) a component including a bore in a material, the bore including a receiving region, a sidewall surface and a base surface, (b) a channel extending from the sidewall surface into the material, (c) a keeper having a first section housed within the channel and a second section which extends past the sidewall surface into the receiving region, and (d) a spike removably insertable into the bore.

  18. Wire brush fastening device

    DOE Patents [OSTI]

    Meigs, Richard A.

    1995-01-01

    A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus.

  19. High power W-band klystrons

    SciTech Connect (OSTI)

    Caryotakis, George; Scheitrum, Glenn; Jongewaard, Erik; Vlieks, Arnold; Fowkes, Randy [Stanford Linear Accelerator Center, Menlo Park, California 94025 (United States); Li, Jeff [University of California Davis, Davis, California 95616 (United States)

    1999-05-01

    The development of W-band klystrons is discussed. Modeling of the klystron performance predicts 100 kW output power from a single klystron. The permanent magnet focusing and small size of the circuit permit combination of multiple klystrons in a module. A six-klystron module in a single vacuum envelope is expected to produce 500 kW peak power and up to 5 kW average power. The critical issues in the W-band klystron development are the electron beam transport and the fabrication of the klystron circuit. Two microfabrication techniques, EDM and LIGA, are being evaluated to produce the W-band circuit. {copyright} {ital 1999 American Institute of Physics.}

  20. Hybrid electroluminescent devices

    DOE Patents [OSTI]

    Shiang, Joseph John; Duggal, Anil Raj; Michael, Joseph Darryl

    2010-08-03

    A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

  1. Alignment reference device

    DOE Patents [OSTI]

    Patton, Gail Y.; Torgerson, Darrel D.

    1987-01-01

    An alignment reference device provides a collimated laser beam that minimizes angular deviations therein. A laser beam source outputs the beam into a single mode optical fiber. The output end of the optical fiber acts as a source of radiant energy and is positioned at the focal point of a lens system where the focal point is positioned within the lens. The output beam reflects off a mirror back to the lens that produces a collimated beam.

  2. Temperature measuring device

    DOE Patents [OSTI]

    Lauf, Robert J.; Bible, Don W.; Sohns, Carl W.

    1999-01-01

    Systems and methods are described for a wireless instrumented silicon wafer that can measure temperatures at various points and transmit those temperature readings to an external receiver. The device has particular utility in the processing of semiconductor wafers, where it can be used to map thermal uniformity on hot plates, cold plates, spin bowl chucks, etc. without the inconvenience of wires or the inevitable thermal perturbations attendant with them.

  3. Fiber optic monitoring device

    DOE Patents [OSTI]

    Samborsky, James K. (605 Groves Blvd., N. Augusta, SC 29841)

    1993-01-01

    A device for the purpose of monitoring light transmissions in optical fibers comprises a fiber optic tap that optically diverts a fraction of a transmitted optical signal without disrupting the integrity of the signal. The diverted signal is carried, preferably by the fiber optic tap, to a lens or lens system that disperses the light over a solid angle that facilitates viewing. The dispersed light indicates whether or not the monitored optical fiber or system of optical fibers is currently transmitting optical information.

  4. wave energy devices

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    devices - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Fuel Cycle Defense Waste Management Programs Advanced Nuclear Energy

  5. Biomolecular detection device

    DOE Patents [OSTI]

    Huo, Qisheng; Liu, Jun

    2008-10-21

    A device for detecting and measuring the concentration of biomolecules in solution, utilizing a conducting electrode in contact with a solution containing target biomolecules, with a film with controllable pore size distribution characteristics applied to at least one surface of the conducting electrode. The film is functionalized with probe molecules that chemically interact with the target biomolecules at the film surface, blocking indicator molecules present in solution from diffusing from the solution to the electrode, thereby changing the electrochemical response of the electrode.

  6. Residual gas analysis device

    DOE Patents [OSTI]

    Thornberg, Steven M.

    2012-07-31

    A system is provided for testing the hermeticity of a package, such as a microelectromechanical systems package containing a sealed gas volume, with a sampling device that has the capability to isolate the package and breach the gas seal connected to a pulse valve that can controllably transmit small volumes down to 2 nanoliters to a gas chamber for analysis using gas chromatography/mass spectroscopy diagnostics.

  7. Thermophotovoltaic energy conversion device

    DOE Patents [OSTI]

    Charache, Greg W.; Baldasaro, Paul F.; Egley, James L.

    1998-01-01

    A thermophotovoltaic device and a method for making the thermophotovoltaic device. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used.

  8. Sectional device handling tool

    DOE Patents [OSTI]

    Candee, Clark B.

    1988-07-12

    Apparatus for remotely handling a device in an irradiated underwater environment includes a plurality of tubular sections interconnected end-to-end to form a handling structure, the bottom section being adapted for connection to the device. A support section is connected to the top tubular section and is adapted to be suspended from an overhead crane. Each section is flanged at its opposite ends. Axially retractable bolts in each bottom flange are threadedly engageable with holes in the top flange of an adjacent section, each bolt being biased to its retracted position and retained in place on the bottom flange. Guide pins on each top flange cooperate with mating holes on adjacent bottom flanges to guide movement of the parts to the proper interconnection orientation. Each section carries two hydraulic line segments provided with quick-connect/disconnect fittings at their opposite ends for connection to the segments of adjacent tubular sections upon interconnection thereof to form control lines which are connectable to the device and to an associated control console.

  9. Thermophotovoltaic energy conversion device

    DOE Patents [OSTI]

    Charache, G.W.; Baldasaro, P.F.; Egley, J.L.

    1998-05-19

    A thermophotovoltaic device and a method for making the thermophotovoltaic device are disclosed. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used. 1 fig.

  10. Study of transmission line attenuation in broad band millimeter wave frequency range

    SciTech Connect (OSTI)

    Pandya, Hitesh Kumar B.; Austin, M. E.; Ellis, R. F.

    2013-10-15

    Broad band millimeter wave transmission lines are used in fusion plasma diagnostics such as electron cyclotron emission (ECE), electron cyclotron absorption, reflectometry and interferometry systems. In particular, the ECE diagnostic for ITER will require efficient transmission over an ultra wide band, 100 to 1000 GHz. A circular corrugated waveguide transmission line is a prospective candidate to transmit such wide band with low attenuation. To evaluate this system, experiments of transmission line attenuation were performed and compared with theoretical loss calculations. A millimeter wave Michelson interferometer and a liquid nitrogen black body source are used to perform all the experiments. Atmospheric water vapor lines and continuum absorption within this band are reported. Ohmic attenuation in corrugated waveguide is very low; however, there is Bragg scattering and higher order mode conversion that can cause significant attenuation in this transmission line. The attenuation due to miter bends, gaps, joints, and curvature are estimated. The measured attenuation of 15 m length with seven miter bends and eighteen joints is 1 dB at low frequency (300 GHz) and 10 dB at high frequency (900 GHz), respectively.

  11. Properties of Wide-Gap Chalcopyrite Semiconductors for Photovoltaic Applications: Final Report, 8 July 1998 -- 17 October 2001

    SciTech Connect (OSTI)

    Rockett, A.

    2003-07-01

    The objectives of this project were to obtain a fundamental understanding of wide-gap chalcopyrite semiconductors and photovoltaic devices. Information to be gathered included significant new fundamental materials data necessary for accurate modeling of single- and tandem-junction devices, basic materials science of wider-gap chalcopyrite semiconductors to be used in next-generation devices, and practical information on the operation of devices incorporating these materials. Deposition used a hybrid sputtering and evaporation method shown previously to produce high-quality epitaxial layers of Cu(In,Ga)Se2 (CIGS). Materials analysis was also provided to assist members of the National CIS Team, of which, through this contract, we were a member. Solar cells produced from resulting single-crystal epitaxial layers in collaboration with various members of the CIS Team were used to determine the factors limiting performance of the devices based on analysis of the results. Because epitaxial growth allows us to determine the surface orientation of our films specifically by choice of the substrate surface on which the film is grown, a major focus of the project concerned the nature of (110)-oriented CIGS films and the performance of solar cells produced from these films. We begin this summary with a description of the results for growth on (110) GaAs, which formed a basis for much of the work ultimately conducted under the program.

  12. Packaging of solid state devices

    DOE Patents [OSTI]

    Glidden, Steven C.; Sanders, Howard D.

    2006-01-03

    A package for one or more solid state devices in a single module that allows for operation at high voltage, high current, or both high voltage and high current. Low thermal resistance between the solid state devices and an exterior of the package and matched coefficient of thermal expansion between the solid state devices and the materials used in packaging enables high power operation. The solid state devices are soldered between two layers of ceramic with metal traces that interconnect the devices and external contacts. This approach provides a simple method for assembling and encapsulating high power solid state devices.

  13. Non- contacting capacitive diagnostic device

    DOE Patents [OSTI]

    Ellison, Timothy

    2005-07-12

    A non-contacting capacitive diagnostic device includes a pulsed light source for producing an electric field in a semiconductor or photovoltaic device or material to be evaluated and a circuit responsive to the electric field. The circuit is not in physical contact with the device or material being evaluated and produces an electrical signal characteristic of the electric field produced in the device or material. The diagnostic device permits quality control and evaluation of semiconductor or photovoltaic device properties in continuous manufacturing processes.

  14. Multimode imaging device

    DOE Patents [OSTI]

    Mihailescu, Lucian; Vetter, Kai M

    2013-08-27

    Apparatus for detecting and locating a source of gamma rays of energies ranging from 10-20 keV to several MeV's includes plural gamma ray detectors arranged in a generally closed extended array so as to provide Compton scattering imaging and coded aperture imaging simultaneously. First detectors are arranged in a spaced manner about a surface defining the closed extended array which may be in the form a circle, a sphere, a square, a pentagon or higher order polygon. Some of the gamma rays are absorbed by the first detectors closest to the gamma source in Compton scattering, while the photons that go unabsorbed by passing through gaps disposed between adjacent first detectors are incident upon second detectors disposed on the side farthest from the gamma ray source, where the first spaced detectors form a coded aperture array for two or three dimensional gamma ray source detection.

  15. Band structure engineering of anatase TiO{sub 2} by metal-assisted P-O coupling

    SciTech Connect (OSTI)

    Wang, Jiajun; Meng, Qiangqiang; Huang, Jing; School of Materials and Chemical Engineering, Anhui Jianzhu University, Hefei, Anhui 230601 ; Li, Qunxiang Yang, Jinlong; Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026

    2014-05-07

    In this work, we demonstrate that the metal-assisted P-O coupling is an effective approach to improve the photoelectrochemical properties of TiO{sub 2}. The (Sc + P) and (In + P) codoping effects on electronic structures and photocatalytic activities of anatase TiO{sub 2} are examined by performing hybrid density functional theory calculations. It is found that the coupling of P dopant with the second-nearest neighboring O atom assisted by acceptor metals (Sc/In) leads to the fully occupied and delocalized intermediate bands within the band gap of anatase TiO{sub 2}, which is driven by the P-O antibonding states (π*). This metal-assisted P-O coupling can prevent the recombination of photogenerated electron-hole pairs and effectively reduce the band gap of TiO{sub 2}. Moreover, the band edge alignments in (Sc + P) and (In + P) codoped anatase TiO{sub 2} are desirable for water-splitting. The calculated optical absorption curves indicate that (Sc + P) and (In + P) codoping in anatase TiO{sub 2} can also effectively enhance the visible light absorption.

  16. Bridging the Gap to 64-bit Computing

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Opteron and AMD64 A Commodity 64 bit x86 SOC Fred Weber Vice President and CTO Computation Products Group Advanced Micro Devices 22 April 2003 AMD - Salishan HPC 2003 2 Opteron/AMD64 Launch - Today! * Official Launch of AMD64 architecture and Production Server/Workstation CPUs - Series 200 (2P) available today - Series 800 (4P+) available later in Q2 * Oracle, IBM-DB2, Microsoft, RedHat, SuSe software support - And many others * Dozens of server system vendors - System builder availability this

  17. Cabazon Band of Mission Indians- 2011 Project

    Broader source: Energy.gov [DOE]

    The Cabazon Band of Mission Indians' long-range goals are to become energy self-sufficient, foster economic diversity, grow jobs, and improve the well-being of members of the tribe as well as those in its region of Southern California.

  18. Nonimaging radiant energy direction device

    DOE Patents [OSTI]

    Winston, Roland

    1980-01-01

    A raidant energy nonimaging light direction device is provided. The device includes an energy transducer and a reflective wall whose contour is particularly determined with respect to the geometrical vector flux of a field associated with the transducer.

  19. X-Band Photoinjector Beam Dynamics

    SciTech Connect (OSTI)

    Zhou, Feng; Adolphsen, Chris; Ding, Yuantao; Li, Zenghai; Vlieks, Arnold; /SLAC

    2011-12-13

    SLAC is studying the feasibility of using an X-band RF photocathode gun to produce low emittance bunches for applications such as a mono-energetic MeV {gamma} ray source (in collaboration with LLNL) and a photoinjector for a compact FEL. Beam dynamics studies are being done for a configuration consisting of a 5.5-cell X-band gun followed by several 53-cell high-gradient X-band accelerator structures. A fully 3D program, ImpactT, is used to track particles taking into account space charge forces, short-range longitudinal and transverse wakefields, and the 3D rf fields in the structures, including the quadrupole component of the couplers. The effect of misalignments of the various elements, including the drive-laser, gun, solenoid and accelerator structures, are evaluated. This paper presents these results and estimates of the expected bunch emittance vs cathode gradient, and the effects of mixing between the fundamental and off-frequency longitudinal modes. An X-band gun at SLAC has been shown to operate reliably with a 200 MV/m acceleration gradient at the cathode, which is nearly twice the 115 MV/m acceleration gradient in the LCLS gun. The higher gradient should roughly balance the space charge related transverse emittance growth for the same bunch charge but provide a 3-4 times shorter bunch length. The shorter length would make the subsequent bunch compression easier and allow for a more effective use of emittance exchange. Such a gun can also be used with an X-band linac to produce a compact FEL or g ray source that would require rf sources of only one frequency for beam generation and acceleration. The feasibility of using an X-band rf photocathode gun and accelerator structures to generate high quality electron beams for compact FELs and g ray sources is being studied at SLAC. Results from the X-band photoinjector beam dynamics studies are reported in this paper.

  20. Carburetor icing preventing device

    SciTech Connect (OSTI)

    Nishimura, S.

    1987-09-08

    This patent describes an internal combustion engine having a body defining in part a variable volume chamber in which combustion occurs. The induction passage in the body delivers a charge to the combustion chamber. An intake manifold is affixed to the body and constructed from a highly conductive material and defines a passage communicating with the body induction passage. A highly heat conductive gasket sealingly is engaged between the body and the intake manifold for promoting heat transfer and a charge forming device is affixed to the intake manifold for delivering a fuel/air charge to the passage.

  1. Micro environmental sensing device

    DOE Patents [OSTI]

    Polosky, Marc A.; Lukens, Laurance L.

    2006-05-02

    A microelectromechanical (MEM) acceleration switch is disclosed which includes a proof mass flexibly connected to a substrate, with the proof mass being moveable in a direction substantially perpendicular to the substrate in response to a sensed acceleration. An electrode on the proof mass contacts one or more electrodes located below the proof mass to provide a switch closure in response to the sensed acceleration. Electrical latching of the switch in the closed position is possible with an optional latching electrode. The MEM acceleration switch, which has applications for use as an environmental sensing device, can be fabricated using micromachining.

  2. Arc voltage distribution skewness as an indicator of electrode gap during vacuum arc remelting

    DOE Patents [OSTI]

    Williamson, Rodney L.; Zanner, Frank J.; Grose, Stephen M.

    1998-01-01

    The electrode gap of a VAR is monitored by determining the skewness of a distribution of gap voltage measurements. A decrease in skewness indicates an increase in gap and may be used to control the gap.

  3. Arc voltage distribution skewness as an indicator of electrode gap during vacuum arc remelting

    DOE Patents [OSTI]

    Williamson, R.L.; Zanner, F.J.; Grose, S.M.

    1998-01-13

    The electrode gap of a VAR is monitored by determining the skewness of a distribution of gap voltage measurements. A decrease in skewness indicates an increase in gap and may be used to control the gap. 4 figs.

  4. Rapidity gap survival in central exclusive diffraction: Dynamical

    Office of Scientific and Technical Information (OSTI)

    mechanisms and uncertainties (Conference) | SciTech Connect Rapidity gap survival in central exclusive diffraction: Dynamical mechanisms and uncertainties Citation Details In-Document Search Title: Rapidity gap survival in central exclusive diffraction: Dynamical mechanisms and uncertainties We summarize our understanding of the dynamical mechanisms governing rapidity gap survival in central exclusive diffraction, pp -> p + H + p (H = high-mass system), and discuss the uncertainties in

  5. Development of Low Energy Gap and Fully Regioregular Polythienylenevinylene

    Office of Scientific and Technical Information (OSTI)

    Derivative (Journal Article) | SciTech Connect Development of Low Energy Gap and Fully Regioregular Polythienylenevinylene Derivative Citation Details In-Document Search Title: Development of Low Energy Gap and Fully Regioregular Polythienylenevinylene Derivative Low energy gap and fully regioregular conjugated polymers find its wide use in solar energy conversion applications. This paper will first briefly review this type of polymers and also report synthesis and characterization of a

  6. FAQS Gap Analysis Qualification Card - Civil Structural Engineering |

    Energy Savers [EERE]

    Department of Energy Civil Structural Engineering FAQS Gap Analysis Qualification Card - Civil Structural Engineering Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard. File Civil Structural Engineering Gap Analysis Qualification Card More Documents & Publications DOE-STD-1182-2014 FAQS Qualification Card - Civil Structural Engineering FAQS Job Task Analyses - Civil/Structural

  7. Closing Gaps in Modeling Multifamily Retrofits | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Closing Gaps in Modeling Multifamily Retrofits Closing Gaps in Modeling Multifamily Retrofits This presentation was delivered at the U.S. Department of Energy Building America Technical Update meeting on April 29-30, 2013, in Denver, Colorado. PDF icon cq6_closing_gaps_multifamily_dentz.pdf More Documents & Publications Critical Question #6: What are the Challenges and Solutions for Modeling Multifamily Buildings? Building America Webinar: Central Multifamily Water Heating Systems -

  8. Sensitivity Analysis of the Gap Heat Transfer Model in BISON.

    SciTech Connect (OSTI)

    Swiler, Laura Painton; Schmidt, Rodney C.; Williamson, Richard; Perez, Danielle

    2014-10-01

    This report summarizes the result of a NEAMS project focused on sensitivity analysis of the heat transfer model in the gap between the fuel rod and the cladding used in the BISON fuel performance code of Idaho National Laboratory. Using the gap heat transfer models in BISON, the sensitivity of the modeling parameters and the associated responses is investigated. The study results in a quantitative assessment of the role of various parameters in the analysis of gap heat transfer in nuclear fuel.

  9. CURRENT STATUS OF INSERTION DEVICE DEVELOPMENT AT THE NSLS-II AND ITS FUTURE PLANS

    SciTech Connect (OSTI)

    Tanabe, T.; Chubar, O.; Corwin, T.; Harder, D.A.; He, P.; Kitegi, C.; Rank, J.; Rhein, C.; Rakowsky, G.; Spataro, C.

    2011-03-28

    National Synchrotron Light Source-II (NSLS-II) project is currently under construction. Procurement of various insertion devices (IDs) has begun. This ring assumes a very high beam stability requirement which imposes tighter field specifications on insertion devices (IDs) compared to the rings of previous generation. The state of the art ID Magnetic Measurement Facility is being set up in order to be able to certify the stringent requirements on the magnetic field of NSLS-II IDs. The IDs in the project baseline scope include six 3.5m long damping wigglers (DWs) with 100mm period length and 15mm pole gap, two 2.0m Elliptically Polarizing Undulator (EPU) with 49mm period and 11.5mm minimum magnetic gap, two 3.0m long 20mm period and one 1.5m long 21mm period IVU, which the minimum gap of these is 5mm and 5.5mm, respectively. Recently a special device for inelastic X-ray scattering (IXS) beamline has been added to the collection of baseline devices. Three pole wigglers with a 28mm magnetic gap and a peak field over 1 Tesla will be utilized to accommodate the users of the type of radiation which is currently produced with bending magnets at the NSLS.

  10. Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices

    SciTech Connect (OSTI)

    2009-12-11

    Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials that convert heat into electricity or actively remove heat for refrigeration and cooling purposes. Thermoelectric devices resemble computer chips, and they manage heat by manipulating the direction of electrons at the nanoscale. These devices arent new, but they are currently too inefficient and expensive for widespread use. Phononic Devices is using a high-performance, cost-effective thermoelectric design that will improve the devices efficiency and enable electronics manufacturers to more easily integrate them into their products.

  11. Graphene device and method of using graphene device

    DOE Patents [OSTI]

    Bouchiat, Vincent; Girit, Caglar; Kessler, Brian; Zettl, Alexander K.

    2015-08-11

    An embodiment of a graphene device includes a layered structure, first and second electrodes, and a dopant island. The layered structure includes a conductive layer, an insulating layer, and a graphene layer. The electrodes are coupled to the graphene layer. The dopant island is coupled to an exposed surface of the graphene layer between the electrodes. An embodiment of a method of using a graphene device includes providing the graphene device. A voltage is applied to the conductive layer of the graphene device. Another embodiment of a method of using a graphene device includes providing the graphene device without the dopant island. A dopant island is placed on an exposed surface of the graphene layer between the electrodes. A voltage is applied to the conductive layer of the graphene device. A response of the dopant island to the voltage is observed.

  12. FAQS Gap Analysis Qualification Card – Nuclear Explosive Safety Study

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  13. FAQS Gap Analysis Qualification Card – Construction Management

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  14. FAQS Gap Analysis Qualification Card – Nuclear Safety Specialist

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  15. FAQS Gap Analysis Qualification Card – Fire Protection Engineering

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  16. Catalysis by Design: Bridging the Gap between Theory and Experiments...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Catalysis by Design: Bridging the Gap between Theory and Experiments Poster presentation at the 2007 Diesel Engine-Efficiency & Emissions Research Conference (DEER 2007). 13-16 ...

  17. Info-Gap Analysis of Truncation Errors in Numerical Simulations...

    Office of Scientific and Technical Information (OSTI)

    Title: Info-Gap Analysis of Truncation Errors in Numerical Simulations. Authors: Kamm, James R. ; Witkowski, Walter R. ; Rider, William J. ; Trucano, Timothy Guy ; Ben-Haim, Yakov. ...

  18. Info-Gap Analysis of Numerical Truncation Errors. (Conference...

    Office of Scientific and Technical Information (OSTI)

    Title: Info-Gap Analysis of Numerical Truncation Errors. Authors: Kamm, James R. ; Witkowski, Walter R. ; Rider, William J. ; Trucano, Timothy Guy ; Ben-Haim, Yakov. Publication ...

  19. FAQS Gap Analysis Qualification Card – Radiation Protection

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  20. FAQS Gap Analysis Qualification Card – General Technical Base

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  1. FAQS Gap Analysis Qualification Card – Senior Technical Safety Manager

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  2. FAQS Gap Analysis Qualification Card – Technical Training

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  3. GAPS Power Infrastructure Pvt Ltd | Open Energy Information

    Open Energy Info (EERE)

    Pvt Ltd Jump to: navigation, search Name: GAPS Power & Infrastructure Pvt Ltd. Place: Mumbai, Maharashtra, India Zip: 400098 Sector: Biomass Product: Mumbai-based biomass project...

  4. FAQS Gap Analysis Qualification Card – Criticality Safety

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  5. Interface orbital engineering of large-gap topological states...

    Office of Scientific and Technical Information (OSTI)

    Interface orbital engineering of large-gap topological states: Decorating gold on a ... This content will become publicly available on March 9, 2017 Title: Interface orbital ...

  6. FAQS Gap Analysis Qualification Card – Mechanical Systems

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  7. Summary of Gaps and Barriers for Implementing Residential Building...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy's Building America 2010 Residential Energy Efficiency Meeting held in Denver, Colorado, on July 20-22, 2010. PDF icon Summary of Gaps and Barriers for Implementing ...

  8. FAQS Gap Analysis Qualification Card – Industrial Hygiene

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  9. FAQS Gap Analysis Qualification Card – Facility Representative

    Broader source: Energy.gov [DOE]

    Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

  10. Minority Serving Institutions (MSIs): Bridging the Gap between...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications Bridging the Gap Between Federal Agencies and MSIs Research and Services at the Alabama A&M University Research Institute Office of Energy Efficiency ...

  11. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOE Patents [OSTI]

    Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2015-09-08

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  12. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOE Patents [OSTI]

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  13. Band excitation method applicable to scanning probe microscopy (Patent) |

    Office of Scientific and Technical Information (OSTI)

    DOEPatents Data Explorer Search Results Band excitation method applicable to scanning probe microscopy Title: Band excitation method applicable to scanning probe microscopy Methods and apparatus are described for scanning probe microscopy. A method includes generating a band excitation (BE) signal having finite and predefined amplitude and phase spectrum in at least a first predefined frequency band; exciting a probe using the band excitation signal; obtaining data by measuring a response of

  14. Fluid flow monitoring device

    DOE Patents [OSTI]

    McKay, M.D.; Sweeney, C.E.; Spangler, B.S. Jr.

    1993-11-30

    A flow meter and temperature measuring device are described comprising a tube with a body centered therein for restricting flow and a sleeve at the upper end of the tube to carry several channels formed longitudinally in the sleeve to the appropriate axial location where they penetrate the tube to allow pressure measurements and temperature measurements with thermocouples. The high pressure measurement is made using a channel penetrating the tube away from the body and the low pressure measurement is made at a location at the widest part of the body. An end plug seals the end of the device and holes at its upper end allow fluid to pass from the interior of the tube into a plenum. The channels are made by cutting grooves in the sleeve, the grooves widened at the surface of the sleeve and then a strip of sleeve material is welded to the grooves closing the channels. Preferably the sleeve is packed with powdered graphite before cutting the grooves and welding the strips. 7 figures.

  15. Fluid flow monitoring device

    DOE Patents [OSTI]

    McKay, Mark D.; Sweeney, Chad E.; Spangler, Jr., B. Samuel

    1993-01-01

    A flow meter and temperature measuring device comprising a tube with a body centered therein for restricting flow and a sleeve at the upper end of the tube to carry several channels formed longitudinally in the sleeve to the appropriate axial location where they penetrate the tube to allow pressure measurements and temperature measurements with thermocouples. The high pressure measurement is made using a channel penetrating the tube away from the body and the low pressure measurement is made at a location at the widest part of the body. An end plug seals the end of the device and holes at its upper end allow fluid to pass from the interior of the tube into a plenum. The channels are made by cutting grooves in the sleeve, the grooves widened at the surface of the sleeve and then a strip of sleeve material is welded to the grooves closing the channels. Preferably the sleeve is packed with powdered graphite before cutting the grooves and welding the strips.

  16. Stretchable and foldable electronic devices

    DOE Patents [OSTI]

    2013-10-08

    Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

  17. Stretchable and foldable electronic devices

    DOE Patents [OSTI]

    Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

    2014-12-09

    Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

  18. X-Band RF Gun Development

    SciTech Connect (OSTI)

    Vlieks, Arnold; Dolgashev, Valery; Tantawi, Sami; Anderson, Scott; Hartemann, Fred; Marsh, Roark; /LLNL, Livermore

    2012-06-22

    In support of the MEGa-ray program at LLNL and the High Gradient research program at SLAC, a new X-band multi-cell RF gun is being developed. This gun, similar to earlier guns developed at SLAC for Compton X-ray source program, will be a standing wave structure made of 5.5 cells operating in the pi mode with copper cathode. This gun was designed following criteria used to build SLAC X-band high gradient accelerating structures. It is anticipated that this gun will operate with surface electric fields on the cathode of 200 MeV/m with low breakdown rate. RF will be coupled into the structure through a final cell with symmetric duel feeds and with a shape optimized to minimize quadrupole field components. In addition, geometry changes to the original gun, operated with Compton X-ray source, will include a wider RF mode separation, reduced surface electric and magnetic fields.

  19. S-Band Loads for SLAC Linac

    SciTech Connect (OSTI)

    Krasnykh, A.; Decker, F.-J.; LeClair, R.; /INTA Technologies, Santa Clara

    2012-08-28

    The S-Band loads on the current SLAC linac RF system were designed, in some cases, 40+ years ago to terminate 2-3 MW peak power into a thin layer of coated Kanthal material as the high power absorber [1]. The technology of the load design was based on a flame-sprayed Kanthal wire method onto a base material. During SLAC linac upgrades, the 24 MW peak klystrons were replaced by 5045 klystrons with 65+ MW peak output power. Additionally, SLED cavities were introduced and as a result, the peak power in the current RF setup has increased up to 240 MW peak. The problem of reliable RF peak power termination and RF load lifetime required a careful study and adequate solution. Results of our studies and three designs of S-Band RF load for the present SLAC RF linac system is discussed. These designs are based on the use of low conductivity materials.

  20. Permanent magnet focused X-band photoinjector

    DOE Patents [OSTI]

    Yu, David U. L.; Rosenzweig, James

    2002-09-10

    A compact high energy photoelectron injector integrates the photocathode directly into a multicell linear accelerator with no drift space between the injection and the linac. High electron beam brightness is achieved by accelerating a tightly focused electron beam in an integrated, multi-cell, X-band rf linear accelerator (linac). The photoelectron linac employs a Plane-Wave-Transformer (PWT) design which provides strong cell-to-cell coupling, easing manufacturing tolerances and costs.