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1

Voltage-matched, monolithic, multi-band-gap devices  

SciTech Connect (OSTI)

Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a sting of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

Wanlass, Mark W.; Mascarenhas, Angelo

2006-08-22T23:59:59.000Z

2

Voltage-Matched, Monolithic, Multi-Band-Gap Devices  

DOE Patents [OSTI]

Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a string of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

Wanlass, M. W.; Mascarenhas, A.

2006-08-22T23:59:59.000Z

3

Thermophotovoltaic conversion using selective infrared line emitters and large band gap photovoltaic devices  

DOE Patents [OSTI]

Efficient thermophotovoltaic conversion can be performed using photovoltaic devices with a band gap in the 0.75-1.4 electron volt range, and selective infrared emitters chosen from among the rare earth oxides which are thermally stimulated to emit infrared radiation whose energy very largely corresponds to the aforementioned band gap. It is possible to use thermovoltaic devices operating at relatively high temperatures, up to about 300.degree. C., without seriously impairing the efficiency of energy conversion.

Brandhorst, Jr., Henry W. (Auburn, AL); Chen, Zheng (Auburn, AL)

2000-01-01T23:59:59.000Z

4

Current transport, gate dielectrics and band gap engineering in graphene devices  

E-Print Network [OSTI]

Current transport, gate dielectrics and band gap engineering in graphene devices Wenjuan Zhu In this work, we studied current transport in mono-, bi- and tri-layer graphene. We find that both of the electrical field of the substrate surface polar phonons in bi-layer/tri-layer graphenes. We also find

Perebeinos, Vasili

5

Photovoltaic devices with low band gap polymers Eva Bundgaarda, Sean Shaheenb, David S. Ginleyb, Frederik C. Krebsa  

E-Print Network [OSTI]

Photovoltaic devices with low band gap polymers Eva Bundgaarda, Sean Shaheenb, David S. Ginleyb, Colorado, USA Abstract Progress in organic photovoltaic devices has recently resulted in reported temperature, active area of the device and molecular weight of the polymer, on the photovoltaic response

6

Periodic dielectric structure for production of photonic band gap and devices incorporating the same  

DOE Patents [OSTI]

A periodic dielectric structure which is capable of producing a photonic band gap and which is capable of practical construction. The periodic structure is formed of a plurality of layers, each layer being formed of a plurality of rods separated by a given spacing. The material of the rods contrasts with the material between the rods to have a refractive index contrast of at least two. The rods in each layer are arranged with their axes parallel and at a given spacing. Adjacent layers are rotated by 90.degree., such that the axes of the rods in any given layer are perpendicular to the axes in its neighbor. Alternating layers (that is, successive layers of rods having their axes parallel such as the first and third layers) are offset such that the rods of one are about at the midpoint between the rods of the other. A four-layer periocity is thus produced, and successive layers are stacked to form a three-dimensional structure which exhibits a photonic band gap. By virtue of forming the device in layers of elongate members, it is found that the device is susceptible of practical construction.

Ho, Kai-Ming (Ames, IA); Chan, Che-Ting (Ames, IA); Soukoulis, Costas (Ames, IA)

1994-08-02T23:59:59.000Z

7

Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same  

DOE Patents [OSTI]

This invention relates to novel and comparatively inexpensive semiconductor devices utilizing semiconducting alkaline-earth-oxide crystals doped with alkali metal. The semiconducting crystals are produced by a simple and relatively inexpensive process. As a specific example, a high-purity lithium-doped MgO crystal is grown by conventional techniques. The crystal then is heated in an oxygen-containing atmosphere to form many [Li].degree. defects therein, and the resulting defect-rich hot crystal is promptly quenched to render the defects stable at room temperature and temperatures well above the same. Quenching can be effected conveniently by contacting the hot crystal with room-temperature air.

Abraham, Marvin M. (Oak Ridge, TN); Chen, Yok (Oak Ridge, TN); Kernohan, Robert H. (Oak Ridge, TN)

1981-01-01T23:59:59.000Z

8

Multiple gap photovoltaic device  

DOE Patents [OSTI]

A multiple gap photovoltaic device having a transparent electrical contact adjacent a first cell which in turn is adjacent a second cell on an opaque electrical contact, includes utilizing an amorphous semiconductor as the first cell and a crystalline semiconductor as the second cell.

Dalal, Vikram L. (Newark, DE)

1981-01-01T23:59:59.000Z

9

Method for Creating Photonic Band Gap Materials - Energy Innovation...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a photonic band gap. These microstructures have the potential to change the way optoelectronic devices, such as photodiodes, LEDs, and integrated optical circuit elements, are...

10

Low band gap polymers Organic Photovoltaics  

E-Print Network [OSTI]

Low band gap polymers for Organic Photovoltaics Eva Bundgaard Ph.D. Dissertation Risø National Bundgaard Title: Low band gap polymers for Organic photovoltaics Department: The polymer department Report the area of organic photovoltaics are focusing on low band gap polymers, a type of polymer which absorbs

11

Narrow band gap amorphous silicon semiconductors  

DOE Patents [OSTI]

Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

Madan, A.; Mahan, A.H.

1985-01-10T23:59:59.000Z

12

Single-junction solar cells with the optimum band gap for terrestrial concentrator applications  

DOE Patents [OSTI]

A single-junction solar cell having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of "pinning" the optimum band gap for a wide range of operating conditions at a value of 1.14.+-.0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap.

Wanlass, Mark W. (Golden, CO)

1994-01-01T23:59:59.000Z

13

Fabrication of photonic band gap materials  

DOE Patents [OSTI]

A method for forming a periodic dielectric structure exhibiting photonic band gap effects includes forming a slurry of a nano-crystalline ceramic dielectric or semiconductor material and monodisperse polymer microspheres, depositing a film of the slurry on a substrate, drying the film, and calcining the film to remove the polymer microspheres therefrom. The film may be cold-pressed after drying and prior to calcining. The ceramic dielectric or semiconductor material may be titania, and the polymer microspheres may be polystyrene microspheres.

Constant, Kristen (Ames, IA); Subramania, Ganapathi S. (Ames, IA); Biswas, Rana (Ames, IA); Ho, Kai-Ming (Ames, IA)

2002-01-15T23:59:59.000Z

14

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Substrate-Induced Band-Gap Opening in Epitaxial Graphene Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Wednesday, 26 March 2008 00:00 Prospective challengers to...

15

Single-junction solar cells with the optimum band gap for terrestrial concentrator applications  

DOE Patents [OSTI]

A single-junction solar cell is described having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of ''pinning'' the optimum band gap for a wide range of operating conditions at a value of 1.14[+-]0.02 eV. Efficiencies exceeding 30% may be possible at high concentration ratios for devices with the ideal band gap. 7 figures.

Wanlass, M.W.

1994-12-27T23:59:59.000Z

16

Substrate-induced band gap opening in epitaxial graphene  

E-Print Network [OSTI]

H.A. Electronic states of graphene nanoribbons studied withS.G. Louie. Energy gaps in graphene nanoribbons. Phys. Rev.band-gap engineering of graphene nanoribbons. Phys. Rev.

2008-01-01T23:59:59.000Z

17

acoustic band gaps: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

type of phononic crystals manufactured Institute of Physics. DOI: 10.10631.2167794 The propagation of acoustic waves in periodic composite Deymier, Pierre 2 Acoustic band gap...

18

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic...

19

One-dimensional electromagnetic band gap structures formed by discharge plasmas in a waveguide  

SciTech Connect (OSTI)

We demonstrate the ability to develop one-dimensional electromagnetic band gap structure in X-band waveguide solely by using the positive columns of glow discharges in neon at the middle pressure. Plasma inhomogeneities are distributed uniformly along a typical X-band waveguide with cross section of 23?×?10?mm{sup 2}. It is shown that electron densities larger than 10{sup 14?}cm{sup ?3} are needed in order to create an effective one-dimensional electromagnetic band gap structure. Some applications for using the one-dimensional electromagnetic band gap structure in waveguide as a control of microwave (broadband filter and device for variation of pulse duration) are demonstrated.

Arkhipenko, V. I.; Simonchik, L. V., E-mail: l.simonchik@dragon.bas-net.by; Usachonak, M. S. [B.I. Stepanov Institute of Physics of the NAS of Belarus, Ave. Nezavisimostsi 68, 220072 Minsk (Belarus); Callegari, Th.; Sokoloff, J. [Université de Toulouse, UPS, INPT, LAPLACE, Laboratoire Plasma et Conversion d'Energie, 118 route de Narbonne, F-31062 Toulouse cedex 9 (France)

2014-09-28T23:59:59.000Z

20

Transformation Optics with Photonic Band Gap Media  

E-Print Network [OSTI]

We introduce a class of optical media based on adiabatically modulated, dielectric-only, and potentially extremely low-loss, photonic crystals. The media we describe represent a generalization of the eikonal limit of transformation optics (TO). The foundation of the concept is the possibility to fit frequency isosurfaces in the k-space of photonic crystals with elliptic surfaces, allowing them to mimic the dispersion relation of light in anisotropic effective media. Photonic crystal cloaks and other TO devices operating at visible wavelengths can be constructed from optically transparent substances like glasses, whose attenuation coefficient can be as small as 10 dB/km, suggesting the TO design methodology can be applied to the development of optical devices not limited by the losses inherent to metal-based, passive metamaterials.

Urzhumov, Yaroslav A

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Band gap engineering for graphene by using Na{sup +} ions  

SciTech Connect (OSTI)

Despite the noble electronic properties of graphene, its industrial application has been hindered mainly by the absence of a stable means of producing a band gap at the Dirac point (DP). We report a new route to open a band gap (E{sub g}) at DP in a controlled way by depositing positively charged Na{sup +} ions on single layer graphene formed on 6H-SiC(0001) surface. The doping of low energy Na{sup +} ions is found to deplete the ?* band of graphene above the DP, and simultaneously shift the DP downward away from Fermi energy indicating the opening of E{sub g}. The band gap increases with increasing Na{sup +} coverage with a maximum E{sub g}?0.70?eV. Our core-level data, C 1s, Na 2p, and Si 2p, consistently suggest that Na{sup +} ions do not intercalate through graphene, but produce a significant charge asymmetry among the carbon atoms of graphene to cause the opening of a band gap. We thus provide a reliable way of producing and tuning the band gap of graphene by using Na{sup +} ions, which may play a vital role in utilizing graphene in future nano-electronic devices.

Sung, S. J.; Lee, P. R.; Kim, J. G.; Ryu, M. T.; Park, H. M.; Chung, J. W., E-mail: jwc@postech.ac.kr [Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)

2014-08-25T23:59:59.000Z

22

Optical absorption and band gap reduction in (Fe1-xCrx)2O3 solid...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Optical absorption and band gap reduction in (Fe1-xCrx)2O3 solid solutions: A first-principles study. Optical absorption and band gap reduction in (Fe1-xCrx)2O3 solid solutions: A...

23

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon CoolingSubstrateSubstrate-Induced Band-Gap

24

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIonSubstrate-Induced Band-Gap Opening in

25

Modeling of Photonic Band Gap Crystals and Applications  

SciTech Connect (OSTI)

In this work, the authors have undertaken a theoretical approach to the complex problem of modeling the flow of electromagnetic waves in photonic crystals. The focus is to address the feasibility of using the exciting phenomena of photonic gaps (PBG) in actual applications. The authors start by providing analytical derivations of the computational electromagnetic methods used in their work. They also present a detailed explanation of the physics underlying each approach, as well as a comparative study of the strengths and weaknesses of each method. The Plane Wave expansion, Transfer Matrix, and Finite Difference time Domain Methods are addressed. They also introduce a new theoretical approach, the Modal Expansion Method. They then shift the attention to actual applications. They begin with a discussion of 2D photonic crystal wave guides. The structure addressed consists of a 2D hexagonal structure of air cylinders in a layered dielectric background. Comparison with the performance of a conventional guide is made, as well as suggestions for enhancing it. The studies provide an upper theoretical limit on the performance of such guides, as they assumed no crystal imperfections and non-absorbing media. Next, they study 3D metallic PBG materials at near infrared and optical wavelengths. The main objective is to study the importance of absorption in the metal and the suitability of observing photonic band gaps in such structures. They study simple cubic structures where the metallic scatters are either cubes or interconnected metallic rods. Several metals are studied (aluminum, gold, copper, and silver). The effect of topology is addressed and isolated metallic cubes are found to be less lossy than the connected rod structures. The results reveal that the best performance is obtained by choosing metals with a large negative real part of the dielectric function, together with a relatively small imaginary part. Finally, they point out a new direction in photonic crystal research that involves the interplay of metallic-PBG rejection and photonic band edge absorption. They propose that an absolute metallic-PBG may be used to suppress the infrared part of the blackbody emission and, emit its energy only through a sharp absorption band. Potential applications of this new PBG mechanism include highly efficient incandescent lamps and enhanced thermophotovoltaic energy conversion. The suggested lamp would be able to recycle the energy that would otherwise go into the unwanted heat associated with usual lamps, into light emitted in the visible spectrum. It is estimated this would increase the efficiency over conventional lamps by about 40%.

Ihab Fathy El-Kady

2002-08-27T23:59:59.000Z

26

Utility-Scale Solar Power Converter: Agile Direct Grid Connect Medium Voltage 4.7-13.8 kV Power Converter for PV Applications Utilizing Wide Band Gap Devices  

SciTech Connect (OSTI)

Solar ADEPT Project: Satcon is developing a compact, lightweight power conversion device that is capable of taking utility-scale solar power and outputting it directly into the electric utility grid at distribution voltage levels—eliminating the need for large transformers. Transformers “step up” the voltage of the power that is generated by a solar power system so it can be efficiently transported through transmission lines and eventually “stepped down” to usable voltages before it enters homes and businesses. Power companies step up the voltage because less electricity is lost along transmission lines when the voltage is high and current is low. Satcon’s new power conversion devices will eliminate these heavy transformers and connect a utility-scale solar power system directly to the grid. Satcon’s modular devices are designed to ensure reliability—if one device fails it can be bypassed and the system can continue to run.

None

2012-01-25T23:59:59.000Z

27

Light trapping design for low band-gap polymer solar cells  

E-Print Network [OSTI]

Light trapping design for low band-gap polymer solar cells Stephen Foster1,* and Sajeev John1,2 1 demonstrate numerically a 2-D nanostructured design for light trapping in a low band-gap polymer solar cell, "Light harvesting improvement of organic solar cells with self- enhanced active layer designs," Opt

John, Sajeev

28

Blueshift of optical band gap in ZnO thin films grown by metal-organic chemical-vapor deposition  

E-Print Network [OSTI]

. INTRODUCTION Zinc oxide ZnO is a wide direct band-gap 3.37 eV semiconductor with a broad range of applications. Dimethylzinc DMZn , N2 gas, and high-purity O2 were used as the zinc source, carrier gas, and oxidizing agent including light-emitting devices,1 varistors,2 solar cells,3 and gas sensors.4 Moreover, ZnO is a promising

29

X-Band Photonic Band-Gap Accelerator Structure Breakdown Experiment  

SciTech Connect (OSTI)

In order to understand the performance of photonic band-gap (PBG) structures under realistic high gradient, high power, high repetition rate operation, a PBG accelerator structure was designed and tested at X band (11.424 GHz). The structure consisted of a single test cell with matching cells before and after the structure. The design followed principles previously established in testing a series of conventional pillbox structures. The PBG structure was tested at an accelerating gradient of 65 MV/m yielding a breakdown rate of two breakdowns per hour at 60 Hz. An accelerating gradient above 110 MV/m was demonstrated at a higher breakdown rate. Significant pulsed heating occurred on the surface of the inner rods of the PBG structure, with a temperature rise of 85 K estimated when operating in 100 ns pulses at a gradient of 100 MV/m and a surface magnetic field of 890 kA/m. A temperature rise of up to 250 K was estimated for some shots. The iris surfaces, the location of peak electric field, surprisingly had no damage, but the inner rods, the location of the peak magnetic fields and a large temperature rise, had significant damage. Breakdown in accelerator structures is generally understood in terms of electric field effects. These PBG structure results highlight the unexpected role of magnetic fields in breakdown. The hypothesis is presented that the moderate level electric field on the inner rods, about 14 MV/m, is enhanced at small tips and projections caused by pulsed heating, leading to breakdown. Future PBG structures should be built to minimize pulsed surface heating and temperature rise.

Marsh, Roark A.; /MIT /MIT /NIFS, Gifu /JAERI, Kyoto /LLNL, Livermore; Shapiro, Michael A.; Temkin, Richard J.; /MIT; Dolgashev, Valery A.; Laurent, Lisa L.; Lewandowski, James R.; Yeremian, A.Dian; Tantawi, Sami G.; /SLAC

2012-06-11T23:59:59.000Z

30

OPTIMIZATION OF GRADED BAND GAP CdHgTe SOLAR CELLS A. BOUAZZI (*), Y. MARFAING and J. MIMILA-ARROYO  

E-Print Network [OSTI]

145 OPTIMIZATION OF GRADED BAND GAP CdHgTe SOLAR CELLS A. BOUAZZI (*), Y. MARFAING and J. MIMILA and an n-type CdHgTe alloy of uniform band gap as the base region. The optimization of solar energy conversion is conducted with respect to two constitutive para- meters : the gradient of the band gap

Boyer, Edmond

31

Tunable frequency band-gap and pulse propagation in a strongly nonlinear diatomic chain  

E-Print Network [OSTI]

One-dimensional nonlinear phononic crystals have been assembled from periodic diatomic chains of stainless steel cylinders alternated with Polytetrafluoroethylene (PTFE) spheres. We report the presence of acoustic band gaps in the dispersion relation of the linearized systems and study the transformation of single and multiple pulses in linear, nonlinear and strongly nonlinear regimes with numerical calculations and experiments. The limiting frequencies of the band gap are within the audible frequency range (20-20,000 Hz) and can be tuned by varying the particle's material properties, mass and initial compression. Pulses rapidly transform within very short distances from the impacted end due to the influence of the band gap in the linear and in nonlinear elastic chains. The effects of an in situ band gap created by a mean dynamic compression are observed in the strongly nonlinear wave regime.

E. B. Herbold; J. Kim; V. F. Nesterenko; S. Wang; C. Daraio

2008-06-26T23:59:59.000Z

32

Calculation of wakefields in a 17 GHz beam-driven photonic band-gap accelerator structure  

E-Print Network [OSTI]

We present the theoretical analysis and computer simulation of the wakefields in a 17 GHz photonic band-gap (PBG) structure for accelerator applications. Using the commercial code CST Particle Studio, the fundamental ...

Hu, Min

33

Band Gap Optimization of Two-Dimensional Photonic Crystals Using ...  

E-Print Network [OSTI]

Jul 10, 2009 ... proven very important as device components for integrated optics ...... Inhibited spontaneous emission in solid-state physics and electronics.

2009-07-10T23:59:59.000Z

34

Energy Band-Gap Engineering of Graphene Nanoribbons Melinda Y. Han,1  

E-Print Network [OSTI]

, New York, New York 10027, USA 2 Department of Physics, Columbia University, New York, New York 10027Energy Band-Gap Engineering of Graphene Nanoribbons Melinda Y. Han,1 Barbaros O¨ zyilmaz,2 Yuanbo an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal

Kim, Philip

35

Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge  

DOE Patents [OSTI]

A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

Olson, Jerry M. (Lakewood, CO); Kurtz, Sarah R. (Golden, CO); Friedman, Daniel J. (Lakewood, CO)

2001-01-01T23:59:59.000Z

36

Band gap and electronic structure of MgSiN{sub 2}  

SciTech Connect (OSTI)

Density functional theory calculations and electron energy loss spectroscopy indicate that the electronic structure of ordered orthorhombic MgSiN{sub 2} is similar to that of wurtzite AlN. A band gap of 5.7?eV was calculated for both MgSiN{sub 2} (indirect) and AlN (direct) using the Heyd-Scuseria-Ernzerhof approximation. Correction with respect to the experimental room-temperature band gap of AlN indicates that the true band gap of MgSiN{sub 2} is 6.2?eV. MgSiN{sub 2} has an additional direct gap of 6.3?eV at the ? point.

Quirk, J. B., E-mail: james.quirk09@imperial.ac.uk; Råsander, M.; McGilvery, C. M.; Moram, M. A. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Palgrave, R. [Department of Chemistry, University College London, Gordon Street WC1H 0AJ (United Kingdom)

2014-09-15T23:59:59.000Z

37

Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying  

SciTech Connect (OSTI)

The band structure of pure and Ti-alloyed anodic aluminum oxide has been examined as a function of Ti concentration varying from 2 to 20 at.?%. The band gap energy of Ti-alloyed anodic Al oxide decreases with increasing Ti concentration. X-ray absorption spectroscopy reveals that Ti atoms are not located in a TiO{sub 2} unit in the oxide layer, but rather in a mixed Ti-Al oxide layer. The optical band gap energy of the anodic oxide layers was determined by vacuum ultraviolet spectroscopy in the energy range from 4.1 to 9.2?eV (300–135?nm). The results indicate that amorphous anodic Al{sub 2}O{sub 3} has a direct band gap of 7.3?eV, which is about ?1.4?eV lower than its crystalline counterpart (single-crystal Al{sub 2}O{sub 3}). Upon Ti-alloying, extra bands appear within the band gap of amorphous Al{sub 2}O{sub 3}, mainly caused by Ti 3d orbitals localized at the Ti site.

Canulescu, S., E-mail: stec@fotonik.dtu.dk; Schou, J. [Department of Photonics Engineering, Technical University of Denmark, 4000 Roskilde (Denmark); Rechendorff, K.; Pleth Nielsen, L. [Danish Technological Institute, Kongsvang Alle 29, 8000 Aarhus (Denmark); Borca, C. N. [Paul Scherrer Institute, 5232 Villigen (Switzerland); Jones, N. C.; Hoffmann, S. V. [ISA, Department of Physics and Astronomy, Aarhus University, 8000 Aarhus (Denmark); Bordo, K.; Ambat, R. [Department of Mechanical Engineering, Technical University of Denmark, 2800 Kongens Lyngby (Denmark)

2014-03-24T23:59:59.000Z

38

Method of manufacturing flexible metallic photonic band gap structures, and structures resulting therefrom  

DOE Patents [OSTI]

A method of manufacturing a flexible metallic photonic band gap structure operable in the infrared region, comprises the steps of spinning on a first layer of dielectric on a GaAs substrate, imidizing this first layer of dielectric, forming a first metal pattern on this first layer of dielectric, spinning on and imidizing a second layer of dielectric, and then removing the GaAs substrate. This method results in a flexible metallic photonic band gap structure operable with various filter characteristics in the infrared region. This method may be used to construct multi-layer flexible metallic photonic band gap structures. Metal grid defects and dielectric separation layer thicknesses are adjusted to control filter parameters.

Gupta, Sandhya (Bloomington, MN); Tuttle, Gary L. (Ames, IA); Sigalas, Mihail (Ames, IA); McCalmont, Jonathan S. (Ames, IA); Ho, Kai-Ming (Ames, IA)

2001-08-14T23:59:59.000Z

39

Direct measurements of band gap grading in polycrystalline CIGS solar cells  

E-Print Network [OSTI]

We present direct measurements of depth-resolved band gap variations of CuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers. A new measurement technique combining parallel measurements of local thin-film interference and spectral photoluminescence was developed for this purpose. We find sample-dependent correlation parameters between measured band gap depth and composition profiles, and emphasize the importance of direct measurements. These results bring a quantitative insight into the electronic properties of the solar cells and open a new way to analyze parameters that determine the efficiency of solar cells.

M. P. Heinrich; Z-H. Zhang; Y. Zhang; O. Kiowski; M. Powalla; U. Lemmer; A. Slobodskyy

2010-09-20T23:59:59.000Z

40

Direct measurements of band gap grading in polycrystalline CIGS solar cells  

E-Print Network [OSTI]

We present direct measurements of depth-resolved band gap variations of CuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers. A new measurement technique combining parallel measurements of local thin-film interference and spectral photoluminescence was developed for this purpose. We find sample-dependent correlation parameters between measured band gap depth and composition profiles, and emphasize the importance of direct measurements. These results bring a quantitative insight into the electronic properties of the solar cells and open a new way to analyze parameters that determine the efficiency of solar cells.

Heinrich, M P; Zhang, Y; Kiowski, O; Powalla, M; Lemmer, U; Slobodskyy, A

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure  

E-Print Network [OSTI]

.3As heterointerface. As a result, the band alignment was converted from staggered gap to broken gap-to-source voltage, VGS. As the SS of a MOSFET is governed by the transport mechanism of thermionic-emission over

Yener, Aylin

42

Gallium arsenide-based ternary compounds and multi-band-gap solar cell research  

SciTech Connect (OSTI)

Aim of this contract is the achievement of a high-efficiency, low-cost solar cell. The basic approach to the problem is centered upon the heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The growth technique employed is metalorganic chemical vapor deposition. The silicon wafer may serve as a mechanical substrate and ohmic contact for a single-junction device, or may contain a p-n junction of its own and form the bottom cell of a two junction tandem solar cell structure. The III-V material for the single-junction case is GaAs and for the two-junction case is either GaAlAs or GaAsP, either material having the proper composition to yield a band gap of approximately 1.7 eV. Results achieved in this contract include the following: (1) a 17.6% efficient GaAs-on-Si solar cell; (2) an 18.5% efficient GaAs-on-Si concentrator solar cell at 400 suns; (3) a 24.8% efficient GaAs-on-GaAs solar cell; (4) a 28.7% efficient GaAs-on-GaAs concentrator solar cell at 200 suns; (5) measurement of the effects of dislocation density and emitter doping on GaAs cells; and (6) improvements in the growth process to achieve reproducible thin AlGaAs window layers with low recombination velocities and environmental stability.

Vernon, S. (Spire Corp., Bedford, MA (United States))

1993-02-01T23:59:59.000Z

43

The Electrical and Band-Gap Properties of Amorphous Zinc-Indium-Tin Oxide Thin Films  

E-Print Network [OSTI]

MRSEC The Electrical and Band-Gap Properties of Amorphous Zinc-Indium-Tin Oxide Thin Films D Science & Engineering Center For zinc-indium-tin oxide (ZITO) films, grown by pulsed-laser deposition was replaced by substitution with zinc and tin in equal molar proportions (co-substitution). All ZITO films

Shahriar, Selim

44

Metallic photonic-band-gap filament architectures for optimized incandescent lighting Sajeev John and Rongzhou Wang  

E-Print Network [OSTI]

Metallic photonic-band-gap filament architectures for optimized incandescent lighting Sajeev John occur 3,4 . Tra- ditionally incandescent lighting filaments, despite being driven from equilibrium the blackbody spectrum. This suggests the pos- sibility of higher efficiency incandescent lighting, through

John, Sajeev

45

Size effect on the electronic and optical band gap of CdSe QD  

SciTech Connect (OSTI)

Present paper deals with a critical and comprehensive analysis of the dependence of photo emission (PE) electronic band gap and optical absorption (OA) excitonic band gap on the size of CdSe QD, via connecting it with excitonic absorbance wavelength. Excitonic absorbance wavelength is determined through an empirical fit of established experimental evidences. Effective excitonic charge and Bohr radius is determined as a function of size. Increase in size of the CdSe QD results in greater Bohr radius and smaller effective excitonic charge. Excitonic binding energy as a degree of size of QD is also calculated which further relates with the difference in PE electronic and OA optical band gaps. It is also shown that with increase in size of CdSe QD, the excitonic binding energy decreases which consequently increases differences in two band gaps. Our results are very well comparable with the established results. Explanation for the origin of the unusual optical properties of CdSe QD has been also discussed.

Sisodia, Namita, E-mail: namitasisodiya@gmail.com [Department of Physics, Holkar Science College, Indore-45200 (India)

2014-04-24T23:59:59.000Z

46

Exploiting pattern transformation to tune phononic band gaps in a two-dimensional granular crystal  

E-Print Network [OSTI]

) cylinders is investigated numerically. This system was previously shown to undergo a pattern transformation with uniaxial compression by Go¨ncu¨ et al. [Soft Matter 7, 2321 (2011)]. The dispersion relations, or elastic waves in certain frequency ranges known as band gaps is an important feature of these materials

47

Photonic band gap of a graphene-embedded quarter-wave stack  

SciTech Connect (OSTI)

Here, we present a mechanism for tailoring the photonic band structure of a quarter-wave stack without changing its physical periods by embedding conductive sheets. Graphene is utilized and studied as a realistic, two-dimensional conductive sheet. In a graphene-embedded quarter-wave stack, the synergic actions of Bragg scattering and graphene conductance contributions open photonic gaps at the center of the reduced Brillouin zone that are nonexistent in conventional quarter-wave stacks. Such photonic gaps show giant, loss-independent density of optical states at the fixed lower-gap edges, of even-multiple characteristic frequency of the quarter-wave stack. The conductive sheet-induced photonic gaps provide a platform for the enhancement of light-matter interactions.

Fan, Yuancheng [Ames Laboratory; Wei, Zeyong [Tongji University; Li, Hongqiang [Tongji University; Chen, Hong [Tongji University; Soukoulis, Costas M [Ames Laboratory

2013-12-10T23:59:59.000Z

48

Fabrication of Ceramic Layer-by-Layer Infrared Wavelength Photonic Band Gap Crystals  

SciTech Connect (OSTI)

Photonic band gap (PBG) crystals, also known as photonic crystals, are periodic dielectric structures which form a photonic band gap that prohibit the propagation of electromagnetic (EM) waves of certain frequencies at any incident angles. Photonic crystals have several potential applications including zero-threshold semiconductor lasers, the inhibition of spontaneous emission, dielectric mirrors, and wavelength filters. If defect states are introduced in the crystals, light can be guided from one location to another or even a sharp bending of light in micron scale can be achieved. This generates the potential for optical waveguide and optical circuits, which will contribute to the improvement in the fiber-optic communications and the development of high-speed computers.

Henry Hao-Chuan Kang

2004-12-19T23:59:59.000Z

49

Band gap tuning in transition metal oxides by site-specific substitution  

DOE Patents [OSTI]

A transition metal oxide insulator composition having a tuned band gap includes a transition metal oxide having a perovskite or a perovskite-like crystalline structure. The transition metal oxide includes at least one first element selected form the group of Bi, Ca, Ba, Sr, Li, Na, Mg, K, Pb, and Pr; and at least one second element selected from the group of Ti, Al, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Ru, Rh, Hf, Ta, W, Re, Os, Ir, and Pt. At least one correlated insulator is integrated into the crystalline structure, including REMO.sub.3, wherein RE is at least one Rare Earth element, and wherein M is at least one element selected from the group of Co, V, Cr, Ni, Mn, and Fe. The composition is characterized by a band gap of less of 4.5 eV.

Lee, Ho Nyung; Chisholm, Jr., Matthew F; Jellison, Jr., Gerald Earle; Singh, David J; Choi, Woo Seok

2013-12-24T23:59:59.000Z

50

Pre-Stressed Viscoelastic Composites: Effective Incremental Moduli and Band-Gap Tuning  

SciTech Connect (OSTI)

We study viscoelastic wave propagation along pre-stressed nonlinear elastic composite bars. In the pre-stressed state we derive explicit forms for the effective incremental storage and loss moduli with dependence on the pre-stress. We also derive a dispersion relation for the effective wavenumber in the case of arbitrary frequency, hence permitting a study of viscoelastic band-gap tuning via pre-stress.

Parnell, William J. [School of Mathematics, Alan Turing Building, University of Manchester, Manchester, M13 9PL (United Kingdom)

2010-09-30T23:59:59.000Z

51

Microwave band gap and cavity mode in spoof-insulator-spoof waveguide with multiscale structured surface  

E-Print Network [OSTI]

We propose a multiscale spoof-insulator-spoof (SIS) waveguide by introducing periodic geometry modulation in the wavelength scale to a SIS waveguide made of perfect electric conductor. The MSIS consists of multiple SIS subcells. The dispersion relationship of the fundamental guided mode of the spoof surface plasmon polaritons (SSPPs) is studied analytically within the small gap approximation. It is shown that the multiscale SIS possesses microwave band gap (MBG) due to the Bragg scattering. The "gap maps" in the design parameter space are provided. We demonstrate that the geometry of the subcells can efficiently adjust the effective refraction index of the elementary SIS and therefore further control the width and the position of the MBG. The results are in good agreement with numerical calculations by the finite element method (FEM). For finite-sized MSIS of given geometry in the millimeter scale, FEM calculations show that the first-order symmetric SSPP mode has zero transmission in the MBG within frequency...

Zhang, Qiang; Han, Dezhuan; Qin, Fei Fei; Zhang, Xiao Ming; Yao, Yong

2015-01-01T23:59:59.000Z

52

Photonic-band-gap properties for two-component slow light  

SciTech Connect (OSTI)

We consider two-component ''spinor'' slow light in an ensemble of atoms coherently driven by two pairs of counterpropagating control laser fields in a double tripod-type linkage scheme. We derive an equation of motion for the spinor slow light (SSL) representing an effective Dirac equation for a massive particle with the mass determined by the two-photon detuning. By changing the detuning the atomic medium acts as a photonic crystal with a controllable band gap. If the frequency of the incident probe light lies within the band gap, the light experiences reflection from the sample and can tunnel through it. For frequencies outside the band gap, the transmission and reflection probabilities oscillate with the increasing length of the sample. In both cases the reflection takes place into the complementary mode of the probe field. We investigate the influence of the finite excited state lifetime on the transmission and reflection coefficients of the probe light. We discuss possible experimental implementations of the SSL using alkali-metal atoms such as rubidium or sodium.

Ruseckas, J.; Kudriasov, V.; Juzeliunas, G.; Unanyan, R. G.; Otterbach, J.; Fleischhauer, M. [Institute of Theoretical Physics and Astronomy, Vilnius University, A. Gostauto 12, Vilnius 01108 (Lithuania); Fachbereich Physik and Research Center OPTIMAS, Technische Universitaet Kaiserslautern, Kaiserslautern D-67663 (Germany)

2011-06-15T23:59:59.000Z

53

High efficiency thin-film multiple-gap photovoltaic device  

DOE Patents [OSTI]

A photovoltaic device includes at least two solar cells made from Group IV elements or their alloys in the amorphous state mounted on a substrate. The outermost or first cell has a larger bandgap than the second cell. Various techniques are utilized to improve the efficiency of the device.

Dalal, Vikram L. (Newark, DE)

1983-01-01T23:59:59.000Z

54

Electro-optic device with gap-coupled electrode  

DOE Patents [OSTI]

An electro-optic device includes an electro-optic crystal having a predetermined thickness, a first face and a second face. The electro-optic device also includes a first electrode substrate disposed opposing the first face. The first electrode substrate includes a first substrate material having a first thickness and a first electrode coating coupled to the first substrate material. The electro-optic device further includes a second electrode substrate disposed opposing the second face. The second electrode substrate includes a second substrate material having a second thickness and a second electrode coating coupled to the second substrate material. The electro-optic device additionally includes a voltage source electrically coupled to the first electrode coating and the second electrode coating.

Deri, Robert J.; Rhodes, Mark A.; Bayramian, Andrew J.; Caird, John A.; Henesian, Mark A.; Ebbers, Christopher A.

2013-08-20T23:59:59.000Z

55

Effect of silver incorporation in phase formation and band gap tuning of tungsten oxide thin films  

SciTech Connect (OSTI)

Silver incorporated tungsten oxide thin films are prepared by RF magnetron sputtering technique. The effect of silver incorporation in micro structure evolution, phase enhancement, band gap tuning and other optical properties are investigated using techniques such as x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, and UV-Visible spectroscopy. Effect of silver addition in phase formation and band gap tuning of tungsten oxide thin films are investigated. It is found that the texturing and phase formation improves with enhancement in silver content. It is also found that as the silver incorporation enhances the thickness of the films increases at the same time the strain in the film decreases. Even without annealing the desired phase can be achieved by doping with silver. A broad band centered at the wavelength 437 nm is observed in the absorption spectra of tungsten oxide films of higher silver incorporation and this can be attributed to surface plasmon resonance of silver atoms present in the tungsten oxide matrix. The transmittance of the films is decreased with increase in silver content which can be due to increase in film thickness, enhancement of scattering, and absorption of light caused by the increase of grain size, surface roughness and porosity of films and enhanced absorption due to surface plasmon resonance of silver. It is found that silver can act as the seed for the growth of tungsten oxide grains and found that the grain size increases with silver content which in turn decreases the band gap of tungsten oxide from 3.14 eV to 2.70 eV.

Jolly Bose, R.; Kumar, R. Vinod; Sudheer, S. K.; Mahadevan Pillai, V. P. [Department of Optoelectronics, University of Kerala, Kariyavattom, Thiruvananthapuram, Kerala 695581 (India); Reddy, V. R.; Ganesan, V. [UGC - DAE Consortium for Scientific Research, Khandwa Road, Indore 452017, Madhyapradesh (India)

2012-12-01T23:59:59.000Z

56

Waveguides in three-dimensional metallic photonic band-gap materials  

SciTech Connect (OSTI)

We theoretically investigate waveguide structures in three-dimensional metallic photonic band-gap (MPBG) materials. The MPBG materials used in this study consist of a three-dimensional mesh of metallic wires embedded in a dielectric. An {ital L}-shaped waveguide is created by removing part of the metallic wires. Using finite difference time domain simulations, we found that an 85{percent} transmission efficiency can be achieved through the 90{degree} bend with just three unit cell thickness MPBG structures. thinsp {copyright} {ital 1999} {ital The American Physical Society}

Sigalas, M.M.; Biswas, R.; Ho, K.M.; Soukoulis, C.M. [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)] [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States); Crouch, D.D. [Advanced Electromagnetic Technologies Center, Raytheon Corporation, Rancho Cucamonga, California 91729 (United States)] [Advanced Electromagnetic Technologies Center, Raytheon Corporation, Rancho Cucamonga, California 91729 (United States)

1999-08-01T23:59:59.000Z

57

Analysis of plasma-magnetic photonic crystal with a tunable band gap  

SciTech Connect (OSTI)

In this paper, electromagnetic wave propagation through the one-dimensional plasma-magnetic photonic crystal in the presence of external magnetic field has been analyzed. The dispersion relation, transmission and reflection coefficients have been obtained by using the transfer matrix method. It is investigated how photonic band gap of photonic crystals will be tuned when both dielectric function {epsilon} and magnetic permeability {mu} of the constitutive materials, depend on applied magnetic field. This is shown by one dimensional photonic crystals consisting of plasma and ferrite material layers stacked alternately.

Mehdian, H.; Mohammadzahery, Z.; Hasanbeigi, A. [Department of Physics and Plasma Research Institute of Tarbiat Moallem University, 49 Dr Mofatteh Avenue, Tehran 15614 (Iran, Islamic Republic of)

2013-04-15T23:59:59.000Z

58

Direct space-time observation of pulse tunneling in an electromagnetic band gap  

SciTech Connect (OSTI)

We present space-time-resolved measurements of electromagnetic pulses tunneling through a coaxial electromagnetic band gap structure. The results show that during the tunneling process the field distribution inside the barrier is an exponentially decaying standing wave whose amplitude increases and decreases as it slowly follows the temporal evolution of the input pulse. At no time is a pulse maximum found inside the barrier, and hence the transmitted peak is not the incident peak that has propagated to the exit. The results support the quasistatic interpretation of tunneling dynamics and confirm that the group delay is not the traversal time of the input pulse peak.

Doiron, Serge; Hache, Alain [Department de physique et d'astronomie, Universite de Moncton, Moncton, New Brunswick, E1A 3E9 (Canada); Winful, Herbert G. [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109-2122 (United States)

2007-08-15T23:59:59.000Z

59

Band gap corrections for molecules and solids using Koopmans theorem and Wannier functions  

E-Print Network [OSTI]

We have proposed a method for correcting the Kohn-Sham eigen energies in the density functional theory (DFT) based on the Koopmans theorem using Wannier functions. The method provides a general approach applicable for molecules and solids for electronic structure calculations. It does not have any adjustable parameters and the computational cost is at the DFT level. For solids, the calculated eigen energies agree well with the experiments for not only the band gaps, but also the energies of other valence and conduction bands. For molecules, the calculated eigen energies agree well with the experimental ionization potentials and electron affinities, and show better trends than the traditional Delta-self-consistent-field (?SCF) results.

Ma, Jie

2015-01-01T23:59:59.000Z

60

Effects of surface termination on the band gap of ultrabright Si29 nanoparticles: Experiments and computational models  

E-Print Network [OSTI]

Effects of surface termination on the band gap of ultrabright Si29 nanoparticles: Experiments constituting a H-terminated reconstructed Si surface was recently proposed as a structural prototype termination with a N linkage in butylamine and O linkage in pentane . The emission band for N-termination

Braun, Paul

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Investigation of anisotropic photonic band gaps in three-dimensional magnetized plasma photonic crystals containing the uniaxial material  

SciTech Connect (OSTI)

In this paper, the dispersive properties of three-dimensional (3D) magnetized plasma photonic crystals (MPPCs) composed of anisotropic dielectric (the uniaxial material) spheres immersed in homogeneous magnetized plasma background with face-centered-cubic (fcc) lattices are theoretically investigated by the plane wave expansion method, as the Voigt effects of magnetized plasma are considered. The equations for calculating the anisotropic photonic band gaps (PBGs) in the first irreducible Brillouin zone are theoretically deduced. The anisotropic PBGs and two flatbands regions can be obtained. The effects of the ordinary-refractive index, extraordinary-refractive index, filling factor, plasma frequency, and external magnetic field on the dispersive properties of the 3D MPPCs are investigated in detail, respectively, and some corresponding physical explanations are also given. The numerical results show that the anisotropy can open partial band gaps in 3D MPPCs with fcc lattices and the complete PBGs can be found compared to the conventional 3D MPPCs doped by the isotropic material. The bandwidths of PBGs can be tuned by introducing the magnetized plasma into 3D PCs containing the uniaxial material. It is also shown that the anisotropic PBGs can be manipulated by the ordinary-refractive index, extraordinary-refractive index, filling factor, plasma frequency, and external magnetic field, respectively. The locations of flatbands regions cannot be manipulated by any parameters except for the plasma frequency and external magnetic field. Introducing the uniaxial material can obtain the complete PBGs as the 3D MPPCs with high symmetry and also provides a way to design the tunable devices.

Zhang, Hai-Feng [College of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China) [College of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Nanjing Artillery Academy, Nanjing 211132 (China)] [China; Liu, Shao-Bin; Kong, Xiang-Kun [College of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)] [College of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

2013-09-15T23:59:59.000Z

62

Electronic structure of Pt based topological Heusler compounds with C1{sub b} structure and 'zero band gap'  

SciTech Connect (OSTI)

Besides of their well-known wide range of properties it was recently shown that many of the heavy Heusler semiconductors with 1:1:1 composition and C1{sub b} structure exhibit a zero band gap behavior and are topological insulators induced by their inverted band structure. In the present study, the electronic structure of the Heusler compounds PtYSb and PtLaBi was investigated by bulk sensitive hard x-ray photoelectron spectroscopy. The measured valence band spectra are clearly resolved and in well agreement to the first-principles calculations of the electronic structure of the compounds. The experimental results give clear evidence for the zero band gap state.

Ouardi, Siham; Shekhar, Chandra; Fecher, Gerhard H.; Kozina, Xeniya; Stryganyuk, Gregory; Felser, Claudia [Institut fuer Anorganische Chemie und Analytische Chemie, Johannes Gutenberg-Universitaet, D-55099 Mainz (Germany); Ueda, Shigenori; Kobayashi, Keisuke [NIMS Beamline Station at SPring-8, National Institute for Materials Science, Hyogo 679-5148 (Japan)

2011-05-23T23:59:59.000Z

63

Here, we present the fabrication and use of plastic Photonic Band Gap Bragg fibres in photonic textiles for applications in  

E-Print Network [OSTI]

Here, we present the fabrication and use of plastic Photonic Band Gap Bragg fibres in photonic­section, Bragg fibres feature periodic sequence of layers of two distinct plastics. Under ambient illumination SCHICKER2 , NING GUO1 , CHARLES DUBOIS3 , RACHEL WINGFIELD2 & MAKSIM SKOROBOGATIY1 COLOUR-ON-DEMAND

Skorobogatiy, Maksim

64

Absorption of Narrow-Gap HgCdTe Near the Band Edge Including Nonparabolicity and the Urbach Tail  

E-Print Network [OSTI]

Absorption of Narrow-Gap HgCdTe Near the Band Edge Including Nonparabolicity and the Urbach Tail, USA. 6.--e-mail: yonchang@uic.edu An analytical model describing the absorption behavior of Hg1-x. This model smoothly fits experimental absorption coefficients over energies ranging from the Urbach tail

Flatte, Michael E.

65

Band gap tuning in GaN through equibiaxial in-plane strains S. K. Yadav,2  

E-Print Network [OSTI]

in photovoltaics and light emission diodes LEDs . The InGaN system has been intensively studied during the past to the large atomic size mismatch between Ga and In.3 Thus, other methods to tune the band gap are needed for potential appli- cations of GaN and related materials systems. It is well-known that the structure

Alpay, S. Pamir

66

Predicting New TiO2 Phases with Low Band Gaps by a Multiobjective Global Optimization Approach  

E-Print Network [OSTI]

stable. This is equivalent to a global optimization problem of a biobjective function, i.e., total energyPredicting New TiO2 Phases with Low Band Gaps by a Multiobjective Global Optimization Approach Hou as a novel global optimization algorithm to predict new polymorphs of bulk TiO2 with better optical

Gong, Xingao

67

Wide-band-gap InAlAs solar cell for an alternative multijunction approach Marina S. Leite,1,a  

E-Print Network [OSTI]

Wide-band-gap InAlAs solar cell for an alternative multijunction approach Marina S. Leite,1,a Robyn L. Woo,2 William D. Hong,2 Daniel C. Law,2 and Harry A. Atwater1 1 California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125, USA 2 Boeing-Spectrolab Inc., 12500

Atwater, Harry

68

Low Frequency Noise in Nano-Devices  

E-Print Network [OSTI]

device quality, reliability and the degradation processes. The generation- recombination noise which. His current research interests include low frequency noise, wide-band-gap semiconductors, UV light

69

Quasiparticle band structure and density-functional theory: Single-particle excitations and band gaps in lattice models  

E-Print Network [OSTI]

ARTICLES Quasiparticle band structure and density-functional theory: Single-particle excitations-particle eigenvalues. Without rigorous basis even for the exact density-functional theory , these are often taken, eigenvalues obtained from density-functional theory DFT , and those from a corresponding LDA. Notable among

Hess, Daryl W.

70

Maximum Theoretical Efficiency Limit of Photovoltaic Devices: Effect of Band Structure on Excited State Entropy  

E-Print Network [OSTI]

, we show that the maximum conversion efficiency is limited further by the excited state entropyMaximum Theoretical Efficiency Limit of Photovoltaic Devices: Effect of Band Structure on Excited State Entropy Frank E. Osterloh* Department of Chemistry, University of CaliforniaDavis, One Shields

Osterloh, Frank

71

Ultra-high-frequency chaos in a time-delay electronic device with band-limited feedback  

E-Print Network [OSTI]

Ultra-high-frequency chaos in a time-delay electronic device with band-limited feedback Lucas- dynamical electronic device. It consists of a transistor-based nonlinearity, commercially of such a device, we explore the dynamics of an electronic circuit that consists of a simple transistor

Illing, Lucas

72

Novel wide band gap materials for highly efficient thin film tandem solar cells  

SciTech Connect (OSTI)

Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PV�s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

Brian E. Hardin, Stephen T. Connor, Craig H. Peters

2012-06-11T23:59:59.000Z

73

Partial frequency band gap in one-dimensional magnonic crystals M. Kostylev,1,a  

E-Print Network [OSTI]

approach. It is shown that, due to the one-dimensional artificial periodicity of the medium, the gaps with the artificial spatial periodicity of the structure. In this work, by measuring the frequencies of collective on a silicon substrate using deep ultraviolet lithography with 248 nm exposure wavelength followed by a lift

Adeyeye, Adekunle

74

Significant Reduction in NiO Band Gap upon Formation of LixNi1?xO Alloys: Applications to Solar Energy Conversion  

SciTech Connect (OSTI)

Long-term sustainable solar energy conversion relies on identifying economical and versatile semiconductor materials with appropriate band structures for photovoltaic and photocatalytic applications (e.g., band gaps of ?1.5–2.0 eV). Nickel oxide (NiO) is an inexpensive yet highly promising candidate. Its charge-transfer character may lead to longer carrier lifetimes needed for higher efficiencies, and its conduction band edge is suitable for driving hydrogen evolution via water-splitting. However, NiO’s large band gap (?4 eV) severely limits its use in practical applications. Our first-principles quantum mechanics calculations show band gaps dramatically decrease to ?2.0 eV when NiO is alloyed with Li2O. We show that LixNi1?xO alloys (with x=0.125 and 0.25) are p-type semiconductors, contain states with no impurity levels in the gap and maintain NiO’s desirable charge-transfer character. Lastly, we show that the alloys have potential for photoelectrochemical applications, with band edges well-placed for photocatalytic hydrogen production and CO2 reduction, as well as in tandem dye-sensitized solar cells as a photocathode.

Alidoust, Nima; Toroker, Maytal; Keith, John A.; Carter, Emily A.

2014-01-01T23:59:59.000Z

75

Physics of band-gap formation and its evolution in the pillar-based phononic crystal structures  

SciTech Connect (OSTI)

In this paper, the interplay of Bragg scattering and local resonance is theoretically studied in a phononic crystal (PnC) structure composed of a silicon membrane with periodic tungsten pillars. The comparison of phononic band gaps (PnBGs) in three different lattice types (i.e., square, triangular, and honeycomb) with different pillar geometries shows that different PnBGs have varying degrees of dependency on the lattice symmetry based on the interplay of the local resonances and the Bragg effect. The details of this interplay is discussed. The significance of locally resonating pillars, specially in the case of tall pillars, on PnBGs is discussed and verified by examining the PnBG position and width in perturbed lattices via Monte Carlo simulations. It is shown that the PnBGs caused by the local resonance of the pillars are more resilient to the lattice perturbations than those caused by Bragg scattering.

Pourabolghasem, Reza; Mohammadi, Saeed; Eftekhar, Ali Asghar; Adibi, Ali [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Khelif, Abdelkrim [Institut FEMTO-ST, Université de Franche-Comté, CNRS, 32 Avenue de l'Observatoire, 25044 Besançon Cedex (France)

2014-07-07T23:59:59.000Z

76

Conductivity and optical band gaps of polyethylene oxide doped with Li{sub 2}SO{sub 4} salt  

SciTech Connect (OSTI)

The conductivity and optical properties of Li{sub 2}SO{sub 4} doped polyethylene oxide (PEO) films were studied. The polymer electrolyte films are prepared using solution casting technique. The material phase change was confirmed by X-ray diffraction (XRD) technique. Optical absorption study was conducted using UV- Vis. Spectroscopy in the wavelength range 190–1100nm on pure and doped PEO films. The direct and indirect optical band gaps were found decreased from 5.81–4.51eV and 4.84–3.43eV respectively with increasing the Li{sub 2}SO{sub 4}. The conductivity found to increases with increasing the dopant concentration due to strong hopping mechanism at room temperature.

Chapi, Sharanappa, E-mail: dehu2010@gmail.com; Raghu, S., E-mail: dehu2010@gmail.com; Subramanya, K., E-mail: dehu2010@gmail.com; Archana, K., E-mail: dehu2010@gmail.com; Mini, V., E-mail: dehu2010@gmail.com; Devendrappa, H., E-mail: dehu2010@gmail.com [Dept. of Physics, Mangalore University, Mangalagangothri-574199 (India)

2014-04-24T23:59:59.000Z

77

Band-gap nonlinear optical generation: The structure of internal optical field and the structural light focusing  

SciTech Connect (OSTI)

A novel approach for the enhancement of nonlinear optical effects inside globular photonic crystals (PCs) is proposed and systematically studied via numerical simulations. The enhanced optical harmonic generation is associated with two- and three-dimensional PC pumping with the wavelength corresponding to different PC band-gaps. The interactions between light and the PC are numerically simulated using the finite-difference time-domain technique for solving the Maxwell's equations. Both empty and infiltrated two-dimensional PC structures are considered. A significant enhancement of harmonic generation is predicted owing to the highly efficient PC pumping based on the structural light focusing effect inside the PC structure. It is shown that a highly efficient harmonic generation could be attained for both the empty and infiltrated two- and three-dimensional PCs. We are demonstrating the ability for two times enhancement of the parametric decay efficiency, one order enhancement of the second harmonic generation, and two order enhancement of the third harmonic generation in PC structures in comparison to the nonlinear generations in appropriate homogenous media. Obviously, the nonlinear processes should be allowed by the molecular symmetry. The criteria of the nonlinear process efficiency are specified and calculated as a function of pumping wavelength position towards the PC globule diameter. Obtained criterion curves exhibit oscillating characteristics, which indicates that the highly efficient generation corresponds to the various PC band-gap pumping. The highest efficiency of nonlinear conversions could be reached for PC pumping with femtosecond optical pulses; thus, the local peak intensity would be maximized. Possible applications of the observed phenomenon are also discussed.

Zaytsev, Kirill I., E-mail: kirzay@gmail.com; Katyba, Gleb M.; Yakovlev, Egor V.; Yurchenko, Stanislav O., E-mail: st.yurchenko@mail.ru [Bauman Moscow State Technical University, 2nd Baumanskaya str. 5, Moscow 105005 (Russian Federation); Gorelik, Vladimir S. [P. N. Lebedev Physics Institute of the Russian Academy of Sciences, Leninskiy Prospekt 53, Moscow 119991 (Russian Federation)

2014-06-07T23:59:59.000Z

78

Gallium arsenide-based ternary compounds and multi-band-gap solar cell research. Annual subcontract report, 15 April 1988--14 June 1990  

SciTech Connect (OSTI)

Aim of this contract is the achievement of a high-efficiency, low-cost solar cell. The basic approach to the problem is centered upon the heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The growth technique employed is metalorganic chemical vapor deposition. The silicon wafer may serve as a mechanical substrate and ohmic contact for a single-junction device, or may contain a p-n junction of its own and form the bottom cell of a two junction tandem solar cell structure. The III-V material for the single-junction case is GaAs and for the two-junction case is either GaAlAs or GaAsP, either material having the proper composition to yield a band gap of approximately 1.7 eV. Results achieved in this contract include the following: (1) a 17.6% efficient GaAs-on-Si solar cell; (2) an 18.5% efficient GaAs-on-Si concentrator solar cell at 400 suns; (3) a 24.8% efficient GaAs-on-GaAs solar cell; (4) a 28.7% efficient GaAs-on-GaAs concentrator solar cell at 200 suns; (5) measurement of the effects of dislocation density and emitter doping on GaAs cells; and (6) improvements in the growth process to achieve reproducible thin AlGaAs window layers with low recombination velocities and environmental stability.

Vernon, S. [Spire Corp., Bedford, MA (United States)

1993-02-01T23:59:59.000Z

79

Adaptive algorithms for QCSE optical modulators Excitonic optical absorption at near band gap photon energies in III-V compound semiconductor  

E-Print Network [OSTI]

. Typically, such designs make use of simple rectangular potential wells in the AlGaAs/GaAs or InP/InGaAsP1 Adaptive algorithms for QCSE optical modulators Excitonic optical absorption at near band gap of the quantum well, the excitonic optical absorption strength and energy can be manipulated. This quantum

Levi, Anthony F. J.

80

On the sub-band gap optical absorption in heat treated cadmium sulphide thin film deposited on glass by chemical bath deposition technique  

SciTech Connect (OSTI)

The sub-band gap optical absorption in chemical bath deposited cadmium sulphide thin films annealed at different temperatures has been critically analyzed with special reference to Urbach relation. It has been found that the absorption co-efficient of the material in the sub-band gap region is nearly constant up to a certain critical value of the photon energy. However, as the photon energy exceeds the critical value, the absorption coefficient increases exponentially indicating the dominance of Urbach rule. The absorption coefficients in the constant absorption region and the Urbach region have been found to be sensitive to annealing temperature. A critical examination of the temperature dependence of the absorption coefficient indicates two different kinds of optical transitions to be operative in the sub-band gap region. After a careful analyses of SEM images, energy dispersive x-ray spectra, and the dc current-voltage characteristics, we conclude that the absorption spectra in the sub-band gap domain is possibly associated with optical transition processes involving deep levels and the grain boundary states of the material.

Chattopadhyay, P.; Karim, B.; Guha Roy, S. [Department of Electronic Science, University of Calcutta, 92, A.P.C. Road, Kolkata 700009 (India)

2013-12-28T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Size-dependent shifts of the Néel temperature and optical band-gap in NiO nanoparticles  

SciTech Connect (OSTI)

Bulk NiO is a well-known antiferromagnet with Neel temperature T{sub N}(?)?=?524?K and an optical band-gap E{sub g}?=?4.3?eV. With decrease in particle size D from 40?nm to 4?nm of NiO, systematic changes of T{sub N} and E{sub g} are observed and discussed here. From magnetic measurements, the changes in T{sub N} with D are found to fit finite-size scaling equation T{sub N}(D)?=?T{sub N}(?) [1 ? (?{sub o}/D){sup ?}] with ??=?3.2?±?0.5 and ?{sub o}?=?3.2?±?0.2?nm, in good agreement with the predictions for a Heisenberg system. The observed blue shifts of E{sub g} with decrease in D reaching E{sub g}?=?5.12?eV for D???4?nm are likely due to quantum confinement and non-stoichiometry.

Thota, Subhash, E-mail: mseehra@wvu.edu, E-mail: subhasht@iitg.ac.in [Department of Physics, Indian Institute of Technology, Guwahati, Assam 781039 (India); Shim, J. H.; Seehra, M. S., E-mail: mseehra@wvu.edu, E-mail: subhasht@iitg.ac.in [Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506 (United States)

2013-12-07T23:59:59.000Z

82

Toward Photochemical Water Splitting Using Band-Gap-Narrowed Semiconductors and Transition-Metal Based Molecular Catalysts  

SciTech Connect (OSTI)

We are carrying out coordinated theoretical and experimental studies of toward photochemical water splitting using band-gap-narrowed semiconductors (BGNSCs) with attached multi-electron molecular water oxidation and hydrogen production catalysts. We focus on the coupling between the materials properties and the H{sub 2}O redox chemistry, with an emphasis on attaining a fundamental understanding of the individual elementary steps in the following four processes: (1) Light-harvesting and charge-separation of stable oxide or oxide-derived semiconductors for solar-driven water splitting, including the discovery and characterization of the behavior of such materials at the aqueous interface; (2) The catalysis of the four-electron water oxidation by dinuclear hydroxo transition-metal complexes with quinonoid ligands, and the rational search for improved catalysts; (3) Transfer of the design principles learned from the elucidation of the DuBois-type hydrogenase model catalysts in acetonitrile to the rational design of two-electron hydrogen production catalysts for aqueous solution; (4) Combining these three elements to examine the function of oxidation catalysts on BGNSC photoanode surfaces and hydrogen production catalysts on cathode surfaces at the aqueous interface to understand the challenges to the efficient coupling of the materials functions.

Muckerman,J.T.; Rodriguez, J.A.; Fujita, E.

2009-06-07T23:59:59.000Z

83

Gallium arsenide-based ternary compounds and multi-band-gap solar cell research. Final subcontract report, 1 April 1988--31 March 1990  

SciTech Connect (OSTI)

This report describes work to achieve a high-efficiency, low-cost solar cell. The basic approach to the problem is centered upon the heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The growth technique employed throughout this work is metal-organic chemical vapor deposition. The silicon wafer may serve as a mechanical substrate and ohmic contact for a single-junction device, or it may contain a p-n junction of its own and form the bottom cell of a two-junction tandem solar cell structure. The III-V material for the single-junction case is GaAs, and for the two-junction case it is either GaAlAs or GaAsP, either material having the proper composition to yield a band gap of approximately 1.7 eV. Results achieved in this contract include (1) a 17.6%-efficient GaAs-on-Si solar cell; (2) an 18.5%-efficient GaAs-on-Si concentrator solar cell at 400 suns; (3) a 24.8%-efficient GaAs-on-GaAs solar cell; (4) a 28.7%-efficient GaAs-on-GaAs concentrator solar cell at 200 suns; (5) the measurement of the effects of dislocation density and emitter doping on GaAs cells; and (6) improvements in the growth process to achieve reproducible thin AlGaAs window layers with low recombination velocities and environmental stability.

Vernon, S. [Spire Corp., Bedford, MA (United States)

1993-07-01T23:59:59.000Z

84

Visible-light absorption and large band-gap bowing of GaN1-xSbx from first principles  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

Applicability of the Ga(Sbx)N1-x alloys for practical realization of photoelectrochemical water splitting is investigated using first-principles density functional theory incorporating the local density approximation and generalized gradient approximation plus the Hubbard U parameter formalism. Our calculations reveal that a relatively small concentration of Sb impurities is sufficient to achieve a significant narrowing of the band gap, enabling absorption of visible light. Theoretical results predict that Ga(Sbx)N1-x alloys with 2-eV band gaps straddle the potential window at moderate to low pH values, thus indicating that dilute Ga(Sbx)N1-x alloys could be potential candidates for splitting water under visible light irradiation.

Sheetz, R. Michael; Richter, Ernst; Andriotis, Antonis N.; Lisenkov, Sergey; Pendyala, Chandrashekhar; Sunkara, Mahendra K.; Menon, Madhu

2011-08-01T23:59:59.000Z

85

Structure and red shift of optical band gap in CdO–ZnO nanocomposite synthesized by the sol gel method  

SciTech Connect (OSTI)

The structure and the optical band gap of CdO–ZnO nanocomposites were studied. Characterization using X-ray diffraction (XRD), transmission electron microscopy (TEM) and diffuse reflectance spectroscopy (DRS) analysis confirms that CdO phase is present in the nanocomposites. TEM analysis confirms the formation of spheroidal nanoparticles and nanorods. The particle size was calculated from Debey–Sherrer?s formula and corroborated by TEM images. FTIR spectroscopy shows residual organic materials (aromatic/Olefinic carbon) from nanocomposites surface. CdO content was modified in the nanocomposites in function of polyvinylalcohol (PVA) added. The optical band gap is found to be red shift from 3.21 eV to 3.11 eV with the increase of CdO content. Photoluminescence (PL) measurements reveal the existence of defects in the synthesized CdO–ZnO nanocomposites. - Graphical abstract: Optical properties of ZnO, CdO and ZnO/CdO nanoparticles. Display Omitted - Highlights: • TEM analysis confirms the presence of spherical nanoparticles and nanorods. • The CdO phase is present in the nanocomposites. • The band gap of the CdO–ZnO nanocomposites is slightly red shift with CdO content. • PL emission of CdO–ZnO nanocomposite are associated to structural defects.

Mosquera, Edgar, E-mail: edemova@ing.uchile.cl [Laboratorio de Materiales a Nanoescala, Departamento de Ciencia de los Materiales, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Av. Tupper 2069, Santiago (Chile); Pozo, Ignacio del, E-mail: ignacio.dpf@gmail.com [Facultad de Ciencias Naturales, Matemáticas y del Medio Ambiente, Universidad Tecnológica Metropolitana, Av. José Pedro Alessandri 1242, Santiago (Chile); Morel, Mauricio, E-mail: mmorel@ing.uchile.cl [Laboratorio de Materiales a Nanoescala, Departamento de Ciencia de los Materiales, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Av. Tupper 2069, Santiago (Chile)

2013-10-15T23:59:59.000Z

86

Negative band gap bowing in epitaxial InAsGaAs alloys and predicted band offsets of the strained binaries and alloys on various substrates  

E-Print Network [OSTI]

Renewable Energy Laboratory, Golden, Colorado 80401 Received 21 December 2001; accepted for publication 26 as an adjustable parameter along with other quantities when measured interband transition energies are fit which relates transition-atom defect levels to an absolute energy reference to infer approximate band

Hart, Gus

87

PHYSICAL REVIEW B 85, 155101 (2012) Electronic properties of layered multicomponent wide-band-gap oxides: A combinatorial approach  

E-Print Network [OSTI]

devices including solar cells, smart windows, and flat panel displays, and they also find application as heating, antistatic, and optical coatings (for select reviews, see Refs. 1­7). Multicomponent TCOs

Medvedeva, Julia E.

88

Theory of non-Markovian decay of a cascade atom in high-Q cavities and photonic band-gap materials  

E-Print Network [OSTI]

The dynamics of a three-level atom in a cascade configuration with both transitions coupled to a single structured reservoir of quantized field modes is treated using Laplace transform methods applied to the coupled amplitude equations. Results are also obtained from master equations by two different approaches, that is, involving either pseudomodes or quasimodes. Two different types of reservoir are considered, namely a high-Q cavity and a photonic band-gap system, in which the respective reservoir structure functions involve Lorentzians. Non-resonant transitions are included in the model. In all cases non-Markovian behaviour for the atomic system can be found, such as oscillatory decay for the high-Q cavity case and population trapping for the photonic band-gap case. In the master equation approaches, the atomic system is augmented by a small number of pseudomodes or quasimodes, which in the quasimode approach themselves undergo Markovian relaxation into a flat reservoir of continuum quasimodes. Results from these methods are found to be identical to those from the Laplace transform method including two-photon excitation of the reservoir with both emitting sequences. This shows that complicated non-Markovian decays of an atomic system into structured EM field reservoirs can be described by Markovian models for the atomic system coupled to a small number of pseudomodes or quasimodes.

B. M. Garraway; B. J. Dalton

2006-02-13T23:59:59.000Z

89

Solar Energy Materials & Solar Cells 91 (2007) 15991610 Improving solar cell efficiency using photonic band-gap materials  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 91 (2007) 1599­1610 Improving solar cell efficiency using) solar energy conversion systems (or solar cells) are the most widely used power systems. However and reliable solar-cell devices is presented. We show that due their ability to modify the spectral and angular

Dowling, Jonathan P.

90

PHYSICAL REVIEW B 84, 035315 (2011) Theoretical analysis of the crystal structure, band-gap energy, polarization, and piezoelectric  

E-Print Network [OSTI]

have already been incorporated in flat panel displays and solar cells as transparent electrodesO can be tailored by alloying ZnO with BeO for applications such as electrodes in flat panel displays and solar cells, blue and ultraviolet (UV) light emitting devices, and highly sensitive UV detectors. We

Alpay, S. Pamir

2011-01-01T23:59:59.000Z

91

Identifying topological-band insulator transitions in silicene and other 2D gapped Dirac materials by means of Rényi-Wehrl entropy  

E-Print Network [OSTI]

We propose a new method to identify transitions from a topological insulator to a band insulator in silicene (the silicon equivalent of graphene) in the presence of perpendicular magnetic and electric fields, by using the R\\'enyi-Wehrl entropy of the quantum state in phase space. Electron-hole entropies display an inversion/crossing behavior at the charge neutrality point for any Landau level, and the combined entropy of particles plus holes turns out to be maximum at this critical point. The result is interpreted in terms of delocalization of the quantum state in phase space. The entropic description presented in this work will be valid in general 2D gapped Dirac materials, with a strong intrinsic spin-orbit interaction, isoestructural with silicene.

M. Calixto; E. Romera

2015-02-11T23:59:59.000Z

92

Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix  

DOE Patents [OSTI]

A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

Forrest, Stephen R. (Ann Arbor, MI)

2008-08-19T23:59:59.000Z

93

Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier  

DOE Patents [OSTI]

A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

Forrest, Stephen R. (Ann Arbor, MI); Wei, Guodan (Ann Arbor, MI)

2010-07-06T23:59:59.000Z

94

Performance of an MPI-only semiconductor device simulator on a quad socket/quad core InfiniBand platform.  

SciTech Connect (OSTI)

This preliminary study considers the scaling and performance of a finite element (FE) semiconductor device simulator on a capacity cluster with 272 compute nodes based on a homogeneous multicore node architecture utilizing 16 cores. The inter-node communication backbone for this Tri-Lab Linux Capacity Cluster (TLCC) machine is comprised of an InfiniBand interconnect. The nonuniform memory access (NUMA) nodes consist of 2.2 GHz quad socket/quad core AMD Opteron processors. The performance results for this study are obtained with a FE semiconductor device simulation code (Charon) that is based on a fully-coupled Newton-Krylov solver with domain decomposition and multilevel preconditioners. Scaling and multicore performance results are presented for large-scale problems of 100+ million unknowns on up to 4096 cores. A parallel scaling comparison is also presented with the Cray XT3/4 Red Storm capability platform. The results indicate that an MPI-only programming model for utilizing the multicore nodes is reasonably efficient on all 16 cores per compute node. However, the results also indicated that the multilevel preconditioner, which is critical for large-scale capability type simulations, scales better on the Red Storm machine than the TLCC machine.

Shadid, John Nicolas; Lin, Paul Tinphone

2009-01-01T23:59:59.000Z

95

VOLUME 84, NUMBER 19 P H Y S I C A L R E V I E W L E T T E R S 8 MAY 2000 Theory and Experiments on Elastic Band Gaps  

E-Print Network [OSTI]

Investigaciones Científicas (CSIC), Serrano 144, 28006 Madrid, Spain 2 Ames Laboratory, Iowa State University, Ames, Iowa 50011 3 Instituto de Acústica, CSIC, Serrano 144, 28006 Madrid, Spain 4 Instituto de Física Aplicada, CSIC, Serrano 144, 28006 Madrid, Spain (Received 26 February 1999) We study elastic band gaps

96

Hybrid density functional calculations of the band gap of GaxIn1-xN Xifan Wu,1 Eric J. Walter,2 Andrew M. Rappe,3 Roberto Car,1 and Annabella Selloni1  

E-Print Network [OSTI]

Hybrid density functional calculations of the band gap of GaxIn1-xN Xifan Wu,1 Eric J. Walter,2 Andrew M. Rappe,3 Roberto Car,1 and Annabella Selloni1 1Chemistry Department, Princeton University Recent theoretical work has provided evidence that hybrid functionals, which include a fraction of exact

Rappe, Andrew M.

97

Biology is curved, soft and elastic; silicon wafers are not. Semiconductor technologies that can bridge this gap in form and mechanics will create new opportunities in devices that adopt  

E-Print Network [OSTI]

ABSTRACT Biology is curved, soft and elastic; silicon wafers are not. Semiconductor technologies that can bridge this gap in form and mechanics will create new opportunities in devices that adopt

Reisslein, Martin

98

Band gap of CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals  

SciTech Connect (OSTI)

The band gap E{sub g} of the CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals and its temperature dependence are determined by optical methods. This is motivated by considerable contradictoriness of the published data, which hampers the interpretation and calculation of characteristics of detectors of X-ray and {gamma} radiation based on these materials (E{sub g} = 1.39-1.54 and 1.51-1.6 eV for CdTe and Cd{sub 0.9}Zn{sub 0.1}Te, respectively). The used procedure of determination of E{sub g} is analyzed from the viewpoint of the influence of the factors leading to inaccuracies in determination of its value. The measurements are performed for well-purified high-quality samples. The acquired data for CdTe (E{sub g} = 1.47-1.48 eV) and Cd{sub 0.9}Zn{sub 0.1}Te (E{sub g} = 1.52-1.53 eV) at room temperature substantially narrow the range of accurate determination of E{sub g}.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpact.net; Sklyarchuk, V. M.; Sklyarchuk, O. V.; Maslyanchuk, O. L. [Chernovtsy National University (Ukraine)

2011-10-15T23:59:59.000Z

99

Band-Gap Reduction and Dopant Interaction in Epitaxial La,Cr Co-doped SrTiO3 Thin Films  

SciTech Connect (OSTI)

We show that by co-doping SrTiO3 (STO) epitaxial thin films with equal amounts of La and Cr it is possible to produce films with an optical band gap ~0.9 eV lower than that of undoped STO. Sr1-xLaxTi1-xCrxO3 thin films were deposited by molecular beam epitaxy and characterized using x-ray photoelectron spectroscopy and x-ray absorption near-edge spectroscopy to show that the Cr dopants are almost exclusively in the Cr3+ oxidation state. Extended x-ray absorption fine structure measurements and theoretical modeling suggest that it is thermodynamically preferred for La and Cr dopants to occupy nearest neighbor A- and B-sites in the lattice. Transport measurements show that the material exhibits variable-range hopping conductivity with high resistivity. These results create new opportunities for the use of doped STO films in photovoltaic and photocatalytic applications.

Comes, Ryan B.; Sushko, Petr; Heald, Steve M.; Colby, Robert J.; Bowden, Mark E.; Chambers, Scott A.

2014-12-03T23:59:59.000Z

100

Sealing device  

DOE Patents [OSTI]

A sealing device for sealing a gap between a dovetail of a bucket assembly and a rotor wheel is disclosed. The sealing device includes a cover plate configured to cover the gap and a retention member protruding from the cover plate and configured to engage the dovetail. The sealing device provides a seal against the gap when the bucket assemply is subjected to a centrifugal force.

Garcia-Crespo, Andres Jose

2013-12-10T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Wide band gap semiconductor templates  

DOE Patents [OSTI]

The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

Arendt, Paul N. (Los Alamos, NM); Stan, Liliana (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM); DePaula, Raymond F. (Santa Fe, NM); Usov, Igor O. (Los Alamos, NM)

2010-12-14T23:59:59.000Z

102

Theoretical study of influencing factors on the dispersion of bulk band-gap edges and the surface states in topological insulators Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}  

SciTech Connect (OSTI)

The dispersion of the band-gap edge states in bulk topological insulators Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} is considered within density functional theory. The dependences of this dispersion both on the approximation used for an exchange-correlation functional at fixed unit cell parameters and atomic positions and on these parameters and positions that are obtained upon structural relaxation performed using a certain approximated functional are analyzed. The relative position of the Dirac point of topologically protected surface states and the valence band maximum in the surface electronic structure of the topological insulators is discussed.

Rusinov, I. P., E-mail: rusinovip@gmail.com; Nechaev, I. A. [Tomsk State University (Russian Federation); Chulkov, E. V. [Donostia International Physics Center (DIPC) (Spain)

2013-06-15T23:59:59.000Z

103

Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach H. J. Xiang,1,2,* Bing Huang,2  

E-Print Network [OSTI]

phase with quasidirect gaps of 1.55 eV, which is a promising candidate for making thin-film solar cells have also been based on diamond Si in monocrystalline or large-grained polycrystalline form [1 gap of 1.55 eV. We suggest that these new Si phases could be used in thin-film solar cells

Gong, Xingao

104

2012 REU Project Abstracts Identifying Fluids for Tuning and Cooling Radio Frequency Devices Operating in the X-Band  

E-Print Network [OSTI]

2012 REU Project Abstracts Identifying Fluids for Tuning and Cooling Radio Frequency Devices Sapatnekar FPGAs have been used widely for many applications from defense systems to medical equip- ment. Several nanofluidic devices containing arrays of nanochannels with widths between 50 and 500 nm were

Minnesota, University of

105

Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes  

SciTech Connect (OSTI)

We report on the effects of the As/P intermixing induced by phosphorus ion implantation in InAs/InP quantum dashes (QDas) on their photoluminescence (PL) properties. For nonintermixed QDas, usual temperature-dependent PL properties characterized by a monotonic redshift in the emission band and a continual broadening of the PL linewidth as the temperature increases, are observed. For intermediate ion implantation doses, the inhomogeneous intermixing enhances the QDas size dispersion and the enlarged distribution of carrier confining potential depths strongly affects the temperature-dependent PL properties below 180 K. An important redshift in the PL emission band occurs between 10 and 180 K which is explained by a redistribution of carriers among the different intermixed QDas of the ensemble. For higher implantation doses, the homogeneous intermixing reduces the broadening of the localized QDas state distribution and the measured linewidth temperature behavior matches that of the nonintermixed QDas. An anomalous temperature-dependent emission energy behavior has been observed for extremely high implantation doses, which is interpreted by a possible QDas dissolution.

Hadj Alouane, M. H.; Ilahi, B.; Maaref, H. [Laboratoire de Micro-Optoelectronique et Nanostructures (LMON), Faculte des Sciences, Avenue de l'environnement, 5019 Monastir (Tunisia); Salem, B.; Aimez, V.; Morris, D. [Centre de Recherche en Nanofabrication et Nanocaracterisation (CRN2), Universite de Sherbrooke, (Quebec) J1K 2R1 (Canada); Turala, A.; Regreny, P.; Gendry, M. [Institut des Nanotechnologies de Lyon (INL), UMR CNRS 5270, Universite de Lyon, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully (France)

2010-07-15T23:59:59.000Z

106

Broad-band beam buncher  

DOE Patents [OSTI]

A broad-band beam buncher is disclosed, comprising an evacuated housing, an electron gun therein for producing an electron beam, a buncher cavity having entrance and exit openings through which the beam is directed, grids across such openings, a source providing a positive DC voltage between the cavity and the electron gun, a drift tube through which the electron beam travels in passing through such cavity, grids across the ends of such drift tube, gaps being provided between the drift tube grids and the entrance and exit grids, a modulator for supplying an ultrahigh frequency modulating signal to the drift tube for producing velocity modulation of the electrons in the beam, a drift space in the housing through which the velocity modulated electron beam travels and in which the beam is bunched, and a discharge opening from such drift tube and having a grid across such opening through which the bunched electron beam is discharged into an accelerator or the like. The buncher cavity and the drift tube may be arranged to constitute an extension of a coaxial transmission line which is employed to deliver the modulating signal from a signal source. The extended transmission line may be terminated in its characteristic impedance to afford a broad-band response and the device as a whole designed to effect broad-band beam coupling, so as to minimize variations of the output across the response band.

Goldberg, David A. (Walnut Creek, CA); Flood, William S. (Berkeley, CA); Arthur, Allan A. (Martinez, CA); Voelker, Ferdinand (Orinda, CA)

1986-01-01T23:59:59.000Z

107

InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices  

SciTech Connect (OSTI)

We present the band parameters such as band gap, spin-orbit splitting energy, band offsets and strain of InGaAsBi on InP based on recent experimental data. It is shown that InGaAsBi is promising for near- and mid-infrared photonic devices operating from 0.3–0.8?eV (1.5–4??m) on conventional InP substrates. We also show how bismuth may be used to form alloys whereby the spin-orbit splitting energy (?{sub SO}) is large and controllable and can, for example, be made larger than the band gap (E{sub g}) thereby providing a means of suppressing non-radiative hot-hole producing Auger recombination and inter-valence band absorption both involving the spin-orbit band. This is expected to improve the high-temperature performance and thermal stability of light emitting devices.

Jin, Shirong; John Sweeney, Stephen [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)

2013-12-07T23:59:59.000Z

108

A study of potential high band-gap photovoltaic materials for a two step photon intermediate technique in fission energy conversion  

SciTech Connect (OSTI)

A diamond synthesis chamber and an ion implanter have been constructed. Work has been rapidly progressing and diamond has been synthesized. There are five variables which affect the quality of diamond: (1) mass flow of methane, (2) mass flow of hydrogen, (3) filament temperature, (4) substrate temperature, and (5) substrate material. Enclosed are pictures and data of previous diamond growth experiments. Current work is focused on the conditions which produce the best quality diamond films. In this study, diamond films were deposited using a hot-filament CVD method with boron trioxide (B{sub 2}O{sub 3}) and diphosphorus pentoxide (P{sub 2}O{sub 5}) as the doping sources. P{sub 2}O{sub 5} is the only known effective phosphorus source for forming n-type semiconducting material. An RF generator has been made operation for epitaxial growth of AIN by the chemical vapor deposition method. In initial experiments with a graphite substrate, the RF generator heated the material to a temperature of 1100{degrees}C. A reactor which will use the RF generator has been built for AIN synthesis. The device should be assembled and tested by the end of August. A new process for fabricating platinum silicide photovoltaic cells has been developed. A diffused guard ring has been added to minimize leakage current. VUV to near IR capability has been developed for optical characterization. A microwave driven excimer lamp has been built and tested. Our previous work used a microwave source on an electron cyclotron heated ion source.

Not Available

1991-08-16T23:59:59.000Z

109

Gap and stripline combined monitor  

DOE Patents [OSTI]

A combined gap and stripline monitor device (10) for measuring the intensity and position of a charged particle beam bunch in a beam pipe of a synchotron radiation facility. The monitor has first and second beam pipe portions (11a, 11b) with an axial gap (12) therebetween. An outer pipe (14) cooperates with the first beam pipe portion (11a) to form a gap enclosure, while inner strips (23a-d) cooperate with the first beam pipe portion (11a) to form a stripline monitor, with the stripline length being the same as the gap enclosure length.

Yin, Yan (Palo Alto, CA)

1986-01-01T23:59:59.000Z

110

Gap and stripline combined monitor  

DOE Patents [OSTI]

A combined gap and stripline monitor device for measuring the intensity and position of a charged particle beam bunch in a beam pipe of a synchrotron radiation facility is disclosed. The monitor has first and second beam pipe portions with an axial gap therebetween. An outer pipe cooperates with the first beam pipe portion to form a gap enclosure, while inner strips cooperate with the first beam pipe portion to form a stripline monitor, with the stripline length being the same as the gap enclosure length. 4 figs.

Yin, Y.

1986-08-19T23:59:59.000Z

111

Thermovoltaic semiconductor device including a plasma filter  

DOE Patents [OSTI]

A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

Baldasaro, Paul F. (Clifton Park, NY)

1999-01-01T23:59:59.000Z

112

Monolithic multi-color light emission/detection device  

SciTech Connect (OSTI)

A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber.

Wanlass, Mark W. (Golden, CO)

1995-01-01T23:59:59.000Z

113

Monolithic multi-color light emission/detection device  

SciTech Connect (OSTI)

A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber. 5 figs.

Wanlass, M.W.

1995-02-21T23:59:59.000Z

114

Predicted band structures of III-V semiconductors in the wurtzite phase  

SciTech Connect (OSTI)

While non-nitride III-V semiconductors typically have a zinc-blende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures of wurtzite III-V semiconductors are poorly characterized. We have calculated the electronic band structure for nine III-V semiconductors in the wurtzite phase using transferable empirical pseudopotentials including spin-orbit coupling. We find that all the materials have direct gaps. Our results differ significantly from earlier ab initio calculations, and where experimental results are available (InP, InAs, and GaAs) our calculated band gaps are in good agreement. We tabulate energies, effective masses, and linear and cubic Dresselhaus zero-field spin-splitting coefficients for the zone-center states. The large zero-field spin-splitting coefficients we find may facilitate the development of spin-based devices.

De, A.; Pryor, Craig E. [Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242 (United States)

2010-04-15T23:59:59.000Z

115

Minding the Gap Makes for More Efficient Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

properties of these materials go through a dramatic change that makes them ideal for solar energy applications. These materials can go from indirect band gap semiconductors to...

116

Design, Modeling and Numerical Analysis of Microwave and Optical Devices: The Multi-band Patch Antenna, Ultra Wideband Ring Filter and Plasmonic Waveguide Coupler  

E-Print Network [OSTI]

) Multiband Patch Antenna, (2) Ultra- Wideband Band Pass Ring Filter and (3) Plasmonic Waveguide Coupler with High Coupling Efficiency. First, the idea of a simple frequency reconfigurable patch antenna that operates at multiband from 2 GHz to 4.5 GHz... .................................................................................................................... 3 Introduction ............................................................................................................... 3 Microstrip Antenna Fundamentals.............................................................................. 4 Feed...

Liu, Ya-Chi

2014-01-14T23:59:59.000Z

117

Strain-engineered band parameters of graphene-like SiC monolayer  

SciTech Connect (OSTI)

Using full-potential density functional theory (DFT) calculations we show that the band gap and effective masses of charge carriers in SiC monolayer (ML-SiC) in graphene-like two-dimensional honeycomb structure are tunable by strain engineering. ML-SiC was found to preserve its flat 2D graphene-like structure under compressive strain up to 7%. A transition from indirect-to-direct gap-phase is predicted to occur for a strain value lying within the interval (1.11 %, 1.76%). In both gap-phases band gap decreases with increasing strain, although the rate of decrease is different in the two gap-phases. Effective mass of electrons show a non-linearly decreasing trend with increasing tensile strain in the direct gap-phase. The strain-sensitive properties of ML-SiC, may find applications in future strain-sensors, nanoelectromechanical systems (NEMS) and nano-optomechanical systems (NOMS) and other nano-devices.

Behera, Harihar, E-mail: harihar@theglocaluniversity.in [School of Technology, The Glocal University, Mirzapur Pole, Dist.-Saharanpur, U.P.-247001, India and Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India); Mukhopadhyay, Gautam, E-mail: gmukh@phy.iitb.ac.in [Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

2014-10-06T23:59:59.000Z

118

Energy Gaps in a Spacetime Crystal  

E-Print Network [OSTI]

This paper presents an analysis of the band structure of a spacetime potential lattice created by a standing electromagnetic wave. We show that there are energy band gaps. We estimate the effect, and propose a measurement that could confirm the existence of such phenomena.

L. P. Horwitz; E. Z. Engelberg

2009-11-08T23:59:59.000Z

119

Banded electromagnetic stator core  

DOE Patents [OSTI]

A stator core for an electromagnetic pump includes a plurality of circumferentially adjoining groups of flat laminations disposed about a common centerline axis and collectively defining a central bore and a discontinuous outer perimeter, with adjacent groups diverging radially outwardly to form V-shaped gaps. An annular band surrounds the groups and is predeterminedly tensioned to clamp together the laminations, and has a predetermined flexibility in a radial direction to form substantially straight bridge sections between the adjacent groups. 5 figs.

Fanning, A.W.; Gonzales, A.A.; Patel, M.R.; Olich, E.E.

1996-06-11T23:59:59.000Z

120

Banded electromagnetic stator core  

DOE Patents [OSTI]

A stator core for an electromagnetic pump includes a plurality of circumferentially adjoining groups of flat laminations disposed about a common centerline axis and collectively defining a central bore and a discontinuous outer perimeter, with adjacent groups diverging radially outwardly to form V-shaped gaps. An annular band surrounds the groups and is predeterminedly tensioned to clamp together the laminations, and has a predetermined flexibility in a radial direction to form substantially straight bridge sections between the adjacent groups. 5 figures.

Fanning, A.W.; Gonzales, A.A.; Patel, M.R.; Olich, E.E.

1994-04-05T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Chalcogenide Glass Radiation Sensor; Materials Development, Design and Device Testing  

SciTech Connect (OSTI)

For many decades, various radiation detecting material have been extensively researched, to find a better material or mechanism for radiation sensing. Recently, there is a growing need for a smaller and effective material or device that can perform similar functions of bulkier Geiger counters and other measurement options, which fail the requirement for easy, cheap and accurate radiation dose measurement. Here arises the use of thin film chalcogenide glass, which has unique properties of high thermal stability along with high sensitivity towards short wavelength radiation. The unique properties of chalcogenide glasses are attributed to the lone pair p-shell electrons, which provide some distinctive optical properties when compared to crystalline material. These qualities are derived from the energy band diagram and the presence of localized states in the band gap. Chalcogenide glasses have band tail states and localized states, along with the two band states. These extra states are primarily due to the lone pair electrons as well as the amorphous structure of the glasses. The localized states between the conductance band (CB) and valence band (VB) are primarily due to the presence of the lone pair electrons, while the band tail states are attributed to the Van der Waalâ??s forces between layers of atoms [1]. Localized states are trap locations within the band gap where electrons from the valence band can hop into, in their path towards the conduction band. Tail states on the other hand are locations near the band gap edges and are known as Urbach tail states (Eu). These states are occupied with many electrons that can participate in the various transformations due to interaction with photons. According to Y. Utsugi et. al.[2], the electron-phonon interactions are responsible for the generation of the Urbach tails. These states are responsible for setting the absorption edge for these glasses and photons with energy near the band gap affect these states. We have studied the effect of x-rays and γ-rays, on thin film chalcogenide glasses and applied them in conjunction with film incorporating a silver source in a new type of radiation sensor for which we have an US patent application [3]. In this report, we give data about our studies regarding our designed radiation sensor along with the testing and performance at various radiation doses. These studies have been preceded by materials characterization research related to the compositional and structural characteristics of the active materials used in the radiation sensor design. During the work on the project, we collected a large volume of material since every experiment was repeated many times to verify the results. We conducted a comprehensive material research, analysis and discussion with the aim to understand the nature of the occurring effects, design different structures to harness these effects, generated models to aid in the understanding the effects, built different device structures and collected data to quantify device performance. These various aspects of our investigation have been detailed in previous quarterly reports. In this report, we present our main results and emphasize on the results pertaining to the core project goals â?? materials development, sensor design and testing and with an emphasis on classifying the appropriate material and design for the optimal application. The report has three main parts: (i) Presentation of the main data; (ii) Bulleted summary of the most important results; (iii) List of the patent, journal publications, conference proceedings and conferences participation, occurring as a result of working on the project.

Mitkova, Maria; Butt, Darryl; Kozicki, Michael; Barnaby, Hugo

2013-04-30T23:59:59.000Z

122

First principles investigation of scaling trends of zirconium silicate interface band offsets  

E-Print Network [OSTI]

First principles investigation of scaling trends of zirconium silicate interface band offsets out to investigate the scaling trends of band offsets at model silicon/zirconium silicate interfaces. Owing to the d character of zirconium silicate conduction bands, the band gap and band offset are shown

Dutton, Robert W.

123

Optoelectronic device  

DOE Patents [OSTI]

The invention is an optoelectronic device comprising an active portion which converts light to electricity or converts electricity to light, the active portion having a front side for the transmittal of the light and a back side opposite from the front side, at least two electrical leads to the active portion to convey electricity to or from the active portion, an enclosure surrounding the active portion and through which the at least two electrical leads pass wherein the hermetically sealed enclosure comprises at the front side of the active portion a barrier material which allows for transmittal of light, one or more getter materials disposed so as to not impede the transmission of light to or from the active portion, and a contiguous gap pathway to the getter material which pathway is disposed between the active portion and the barrier material.

Bonekamp, Jeffrey E.; Boven, Michelle L.; Gaston, Ryan S.

2014-09-09T23:59:59.000Z

124

A study of potential high band-gap photovoltaic materials for a two step photon intermediate technique in fission energy conversion. Progress report for year one, December 1, 1990--November 30, 1991  

SciTech Connect (OSTI)

A diamond synthesis chamber and an ion implanter have been constructed. Work has been rapidly progressing and diamond has been synthesized. There are five variables which affect the quality of diamond: (1) mass flow of methane, (2) mass flow of hydrogen, (3) filament temperature, (4) substrate temperature, and (5) substrate material. Enclosed are pictures and data of previous diamond growth experiments. Current work is focused on the conditions which produce the best quality diamond films. In this study, diamond films were deposited using a hot-filament CVD method with boron trioxide (B{sub 2}O{sub 3}) and diphosphorus pentoxide (P{sub 2}O{sub 5}) as the doping sources. P{sub 2}O{sub 5} is the only known effective phosphorus source for forming n-type semiconducting material. An RF generator has been made operation for epitaxial growth of AIN by the chemical vapor deposition method. In initial experiments with a graphite substrate, the RF generator heated the material to a temperature of 1100{degrees}C. A reactor which will use the RF generator has been built for AIN synthesis. The device should be assembled and tested by the end of August. A new process for fabricating platinum silicide photovoltaic cells has been developed. A diffused guard ring has been added to minimize leakage current. VUV to near IR capability has been developed for optical characterization. A microwave driven excimer lamp has been built and tested. Our previous work used a microwave source on an electron cyclotron heated ion source.

Not Available

1991-08-16T23:59:59.000Z

125

Windy Gap Firming Project  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Infrastructure projects Interconnection OASIS OATT Windy Gap Firming Project, Final Environmental Impact Statement, DOEEIS-0370 (cooperating agency) Western's proposed...

126

Equivalent Circuit Description of Non-compensated n-p Codoped TiO2 as Intermediate Band Solar Cells  

E-Print Network [OSTI]

The novel concept of non-compensated n-p codoping has made it possible to create tunable intermediate bands in the intrinsic band gap of TiO2, making the codoped TiO2 a promising material for developing intermediate band solar cells (IBSCs). Here we investigate the quantum efficiency of such IBSCs within two scenarios - with and without current extracted from the extended intermediate band. Using the ideal equivalent circuit model, we find that the maximum efficiency of 57% in the first scenario and 53% in the second are both much higher than the Shockley-Queisser limit from single gap solar cells. We also obtain various key quantities of the circuits, a useful step in realistic development of TiO2 based solar cells invoking device integration. These equivalent circuit results are also compared with the efficiencies obtained directly from consideration of electron transition between the energy bands, and both approaches reveal the intriguing existence of double peaks in the maximum quantum efficiency as a function of the relative location of IBs.

Tian-Li Feng; Guang-Wei Deng; Yi Xia; Feng-Cheng Wu; Ping Cui; Hai-Ping Lan; Zhen-Yu Zhang

2010-12-09T23:59:59.000Z

127

Equivalent Circuit Description of Non-compensated n-p Codoped TiO2 as Intermediate Band Solar Cells  

E-Print Network [OSTI]

The novel concept of non-compensated n-p codoping has made it possible to create tunable intermediate bands in the intrinsic band gap of TiO2, making the codoped TiO2 a promising material for developing intermediate band solar cells (IBSCs). Here we investigate the quantum efficiency of such IBSCs within two scenarios - with and without current extracted from the extended intermediate band. Using the ideal equivalent circuit model, we find that the maximum efficiency of 57% in the first scenario and 53% in the second are both much higher than the Shockley-Queisser limit from single gap solar cells. We also obtain various key quantities of the circuits, a useful step in realistic development of TiO2 based solar cells invoking device integration. These equivalent circuit results are also compared with the efficiencies obtained directly from consideration of electron transition between the energy bands, and both approaches reveal the intriguing existence of double peaks in the maximum quantum efficiency as a fun...

Feng, Tian-Li; Xia, Yi; Wu, Feng-Cheng; Cui, Ping; Lan, Hai-Ping; Zhang, Zhen-Yu

2010-01-01T23:59:59.000Z

128

Engineering the Electronic Band Structure for Multiband Solar Cells  

SciTech Connect (OSTI)

Using the unique features of the electronic band structure of GaNxAs1-x alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the Band Anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications.

Lopez, N.; Reichertz, L.A.; Yu, K.M.; Campman, K.; Walukiewicz, W.

2010-07-12T23:59:59.000Z

129

Hetero-junction photovoltaic device and method of fabricating the device  

DOE Patents [OSTI]

A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.

Aytug, Tolga; Christen, David K; Paranthaman, Mariappan Parans; Polat, Ozgur

2014-02-10T23:59:59.000Z

130

College Gender Gaps  

E-Print Network [OSTI]

College Gender Gaps BY MARY ANN BRONSONBY MARY ANN BRONSON FALL 2013 W HY DO WOMEN ATTEND collegerelationship is crucial. Mary Ann Bronson, a Ph.D. candidate

Bronson, Mary Ann

2013-01-01T23:59:59.000Z

131

Correlation between surface chemistry, density and band gap in...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of WO3 films. The XPS analyses indicate the formation of stoichiometric WO3 with tungsten existing in fully oxidized valence state (W6+). However, WO3 films grown at high...

132

Experimental study of photonic band gap accelerator structures  

E-Print Network [OSTI]

This thesis reports theoretical and experimental research on a novel accelerator concept using a photonic bandgap (PBG) structure. Major advances in higher order mode (HOM) damping are required for the next generation of ...

Marsh, Roark A

2009-01-01T23:59:59.000Z

133

Characterization of Novel Semiconductor Alloys for Band Gap Engineering  

E-Print Network [OSTI]

including high efficiency photovoltaics and light emittingEngineering 1.2.1 High Efficiency Photovoltaics 1.2.2 High1.2.1 High Efficiency Photovoltaics There has been

Broesler, Robert Joseph

2010-01-01T23:59:59.000Z

134

Method for Creating Photonic Band Gap Materials - Energy Innovation Portal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces andMapping theEnergy StorageAdvancedMetamaterialsInnovationEnergy

135

Correlation between surface chemistry, density and band gap in  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phases on γ-Al2O3. | EMSLHydrogenin

136

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon CoolingSubstrate

137

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon CoolingSubstrateSubstrate-Induced

138

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon

139

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassiveSubmittedStatus TomAbout »Lab (Newport NewsStyle Substrate-Induced

140

Recent emission channeling studies in wide band gap semiconductors  

E-Print Network [OSTI]

We present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga and Zn sites are given and the stability of the Fe and rare earth lattice location against thermal annealing is discussed.

Wahl, Ulrich; Rita, E; Alves, E; Carvalho-Soares, João; De Vries, Bart; Matias, V; Vantomme, A

2005-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Integrated optical and electrical modeling of plasmon-enhanced thin film photovoltaics: A case-study on organic devices  

SciTech Connect (OSTI)

The nanoscale light control for absorption enhancement of organic photovoltaic (OPV) devices inevitably produces strongly non-uniform optical fields. These non-uniformities due to the localized optical modes are a primary route toward absorption enhancement in OPV devices. Therefore, a rigorous modeling tool taking into account the spatial distribution of optical field and carrier generation is necessary. Presented here is a comprehensive numerical model to describe the coupled optical and electrical behavior of plasmon-enhanced polymer:fullerene bulk heterojunction (BHJ) solar cells. In this model, a position-dependent electron-hole pair generation rate that could become highly non-uniform due to photonic nanostructures is directly calculated from the optical simulations. By considering the absorption and plasmonic properties of nanophotonic gratings included in two different popular device architectures, and applying the Poisson, current continuity, and drift/diffusion equations, the model predicts quantum efficiency, short-circuit current density, and desired carrier mobility ratios for bulk heterojunction devices incorporating nanostructures for light management. In particular, the model predicts a significant degradation of device performance when the carrier species with lower mobility are generated far from the collecting electrode. Consequently, an inverted device architecture is preferred for materials with low hole mobility. This is especially true for devices that include plasmonic nanostructures. Additionally, due to the incorporation of a plasmonic nanostructure, we use simulations to theoretically predict absorption band broadening of a BHJ into energies below the band gap, resulting in a 4.8% increase in generated photocurrent.

Rourke, Devin [Department of Physics, University of Colorado, Boulder, Colorado 80309-0390 (United States); Ahn, Sungmo [Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309-0425 (United States); Nardes, Alexandre M.; Lagemaat, Jao van de; Kopidakis, Nikos [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401 (United States); Park, Wounjhang, E-mail: won.park@colorado.edu [Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309-0425 (United States); Materials Science and Engineering Program, University of Colorado, Boulder, Colorado 80303 (United States)

2014-09-21T23:59:59.000Z

142

Co-Evaporated Cu2ZnSnSe4 Films and Devices  

SciTech Connect (OSTI)

The use of vacuum co-evaporation to produce Cu2ZnSnSe4 photovoltaic devices with 9.15% total-area efficiency is described. These new results suggest that the early success of the atmospheric techniques for kesterite photovoltaics may be related to the ease with which one can control film composition and volatile phases, rather than a fundamental benefit of atmospheric conditions for film properties. The co-evaporation growth recipe is documented, as is the motivation for various features of the recipe. Characteristics of the resulting kesterite films and devices are shown in scanning electron micrographs, including photoluminescence, current-voltage, and quantum efficiency. Current-voltage curves demonstrate low series resistance without the light-dark cross-over seen in many devices in the literature. Band gap indicated by quantum efficiency and photoluminescence is roughly consistent with that expected from first principles calculation.

Repins, I.; Beall, C.; Vora, N.; DeHart, C.; Kuciauskas, D.; Dippo, P.; To, B.; Mann, J.; Hsu, W. C.; Goodrich, A.; Noufi, R.

2012-06-01T23:59:59.000Z

143

ISM band to U-NII band frequency transverter and method of frequency transversion  

DOE Patents [OSTI]

A frequency transverter (10) and method for enabling bi-frequency dual-directional transfer of digitally encoded data on an RF carrier by translating between a crowded or otherwise undesirable first frequency band, such as the 2.4 GHz ISM band, and a less-crowded or otherwise desirable second frequency band, such as the 5.0 GHz-6.0 GHz U-NII band. In a preferred embodiment, the transverter (10) connects between an existing data radio (11) and its existing antenna (30), and comprises a bandswitch (12); an input RF isolating device (14); a transmuter (16); a converter (18); a dual output local oscillator (20); an output RF isolating device (22); and an antenna (24) tuned to the second frequency band. The bandswitch (12) allows for bypassing the transverter (10), thereby facilitating its use with legacy systems. The transmuter (14) and converter (16) are adapted to convert to and from, respectively, the second frequency band.

Stepp, Jeffrey David (Grandview, MO); Hensley, Dale (Grandview, MO)

2006-04-04T23:59:59.000Z

144

Generation gaps in engineering?  

E-Print Network [OSTI]

There is much enthusiastic debate on the topic of generation gaps in the workplace today; what the generational differences are, how to address the apparent challenges, and if the generations themselves are even real. ...

Kim, David J. (David Jinwoo)

2008-01-01T23:59:59.000Z

145

Fiber optic gap gauge  

SciTech Connect (OSTI)

A lightweight, small size, high sensitivity gauge for indirectly measuring displacement or absolute gap width by measuring axial strain in an orthogonal direction to the displacement/gap width. The gap gauge includes a preferably titanium base having a central tension bar with springs connecting opposite ends of the tension bar to a pair of end connector bars, and an elongated bow spring connected to the end connector bars with a middle section bowed away from the base to define a gap. The bow spring is capable of producing an axial strain in the base proportional to a displacement of the middle section in a direction orthogonal to the base. And a strain sensor, such as a Fabry-Perot interferometer strain sensor, is connected to measure the axial strain in the base, so that the displacement of the middle section may be indirectly determined from the measurement of the axial strain in the base.

Wood, Billy E. (Livermore, CA); Groves, Scott E. (Brentwood, CA); Larsen, Greg J. (Brentwood, CA); Sanchez, Roberto J. (Pleasanton, CA)

2006-11-14T23:59:59.000Z

146

Inception report and Gap analysis  

E-Print Network [OSTI]

Inception report and Gap analysis Boiler inspection Riga, June 2004 #12;Inception report and gap analysis ­ boiler inspection Table of Content 1 INTRODUCTION ................................................................................................................................. 3 2 BOILER INSTALLATIONS ­ GAP ANALYSIS

147

SUPERCONDUCTING DEVICES  

E-Print Network [OSTI]

communications. References Superconductor Applications: ~on all aspects of superconducting devices. IEEE Trans.on all aspects vf superconducting devices. The IBM Journal

Clarke, John

2014-01-01T23:59:59.000Z

148

SUPERCONDUCTING DEVICES  

E-Print Network [OSTI]

on all aspects of superconducting devices. IEEE Trans.on all aspects vf superconducting devices. The IBM JournalJ. Matisoo, The Superconducting Computer," Scientific

Clarke, John

2014-01-01T23:59:59.000Z

149

Uncertainties in Gapped Graphene  

E-Print Network [OSTI]

Motivated by graphene-based quantum computer we examine the time-dependence of the position-momentum and position-velocity uncertainties in the monolayer gapped graphene. The effect of the energy gap to the uncertainties is shown to appear via the Compton-like wavelength $\\lambda_c$. The uncertainties in the graphene are mainly contributed by two phenomena, spreading and zitterbewegung. While the former determines the uncertainties in the long-range of time, the latter gives the highly oscillation to the uncertainties in the short-range of time. The uncertainties in the graphene are compared with the corresponding values for the usual free Hamiltonian $\\hat{H}_{free} = (p_1^2 + p_2^2) / 2 M$. It is shown that the uncertainties can be under control within the quantum mechanical law if one can choose the gap parameter $\\lambda_c$ freely.

Eylee Jung; Kwang S. Kim; DaeKil Park

2012-03-20T23:59:59.000Z

150

Mind The Gap  

E-Print Network [OSTI]

We discuss an optimisation criterion for the exact renormalisation group based on the inverse effective propagator, which displays a gap. We show that a simple extremisation of the gap stabilises the flow, leading to better convergence of approximate solutions towards the physical theory. This improves the reliability of truncations, most relevant for any high precision computation. These ideas are closely linked to the removal of a spurious scheme dependence and a minimum sensitivity condition. The issue of predictive power and a link to the Polchinski RG are discussed as well. We illustrate our findings by computing critical exponents for the Ising universality class.

Daniel F. Litim

2001-04-25T23:59:59.000Z

151

GAP TESTS; COMPARISON BETWEEN UN GAP TEST AND CARD GAP TEST  

E-Print Network [OSTI]

98-36 GAP TESTS; COMPARISON BETWEEN UN GAP TEST AND CARD GAP TEST by R. BRANKA and C. MICHOT, FRANCE (tel.: 33 3 44 55 65 19, fax: 33 3 44 55 65 10) ABSTRACT: UN gap test, type 1(a) or 2(a), is the recommended test in the acceptance procedure for transport of explosives in class 1. Up to the revision

Paris-Sud XI, Université de

152

Daydreaming Devices  

E-Print Network [OSTI]

Daydreaming Devices is a project on aspects of daydream and the design of convertible furniture within the context of art. This thesis addresses the concepts and the design of two daydreaming devices developed during my ...

Da Ponte, Ana Sofia Lopes

2008-01-01T23:59:59.000Z

153

Stress testing on silicon carbide electronic devices for prognostics and health management.  

SciTech Connect (OSTI)

Power conversion systems for energy storage and other distributed energy resource applications are among the drivers of the important role that power electronics plays in providing reliable electricity. Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) will help increase the performance and efficiency of power electronic equipment while condition monitoring (CM) and prognostics and health management (PHM) will increase the operational availability of the equipment and thereby make it more cost effective. Voltage and/or temperature stress testing were performed on a number of SiC devices in order to accelerate failure modes and to identify measureable shifts in electrical characteristics which may provide early indication of those failures. Those shifts can be interpreted and modeled to provide prognostic signatures for use in CM and/or PHM. Such experiments will also lead to a deeper understanding of basic device physics and the degradation mechanisms behind failure.

Kaplar, Robert James; Brock, Reinhard C.; Marinella, Matthew; King, Michael Patrick; Smith, Mark A.; Atcitty, Stanley

2011-01-01T23:59:59.000Z

154

Optical gain from the direct gap transition of Ge-on-Si at room temperature  

E-Print Network [OSTI]

We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.

Liu, Jifeng

155

Mind the gap  

E-Print Network [OSTI]

In this summary of the application of Dyson-Schwinger equations to the theory and phenomenology of hadrons, some deductions following from a nonperturbative, symmetry-preserving truncation are highlighted, notable amongst which are results for pseudoscalar mesons. We also describe inferences from the gap equation relating to the radius of convergence of a chiral expansion, applications to heavy-light and heavy-heavy mesons, and quantitative estimates of the contribution of quark orbital angular momentum in pseudoscalar mesons; and recapitulate upon studies of nucleon electromagnetic form factors.

M. S. Bhagwat; A. Krassnigg; P. Maris; C. D. Roberts

2006-12-06T23:59:59.000Z

156

Ohmic contacts for high-temperature GaP devices  

E-Print Network [OSTI]

REMOVAL 10 13 24 24 26 50 50 52 78 80 83 98 98 99 100 TABLE OF CONTENTS (Continued) APPENDIX D ? 6 LIFT-OFF PREMETAL PREPARATION APPENDIX D ? 7 METAL LIFTOFF Page 100 100 vi LIST OP TABLES Table I Relative High Temperature... with a variety of III-V compound semi- conductors and contact metals. By using a ruby or a COe laser with Au-Sn or Ag-Sn contact metals, specific contact resistances as low as 8. 6 x 19 " 0-cm were reported. (The specific contact resistance...

Van der Hoeven, Willem Bernard

2012-06-07T23:59:59.000Z

157

Band filling effects on temperature performance of intermediate band quantum wire solar cells  

SciTech Connect (OSTI)

Detailed studies of solar cell efficiency as a function of temperature were performed for quantum wire intermediate band solar cells grown on the (311)A plane. A remotely doped one-dimensional intermediate band made of self-assembled In{sub 0.4}Ga{sub 0.6}As quantum wires was compared to an undoped intermediate band and a reference p-i-n GaAs sample. These studies indicate that the efficiencies of these solar cells depend on the population of the one-dimensional band by equilibrium free carriers. A change in this population by free electrons under various temperatures affects absorption and carrier transport of non-equilibrium carriers generated by incident light. This results in different efficiencies for both the doped and undoped intermediate band solar cells in comparison with the reference GaAs p-i-n solar cell device.

Kunets, Vas. P., E-mail: vkunets@uark.edu; Furrow, C. S.; Ware, M. E.; Souza, L. D. de; Benamara, M.; Salamo, G. J. [Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Mortazavi, M. [Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, Arkansas 71601 (United States)

2014-08-28T23:59:59.000Z

158

Electrochromic devices  

DOE Patents [OSTI]

An electrochromic device is disclosed having a selective ion transport layer which separates an electrochemically active material from an electrolyte containing a redox active material. The devices are particularly useful as large area architectural and automotive glazings due to there reduced back reaction.

Allemand, Pierre M. (Tucson, AZ); Grimes, Randall F. (Ann Arbor, MI); Ingle, Andrew R. (Tucson, AZ); Cronin, John P. (Tucson, AZ); Kennedy, Steve R. (Tuscon, AZ); Agrawal, Anoop (Tucson, AZ); Boulton, Jonathan M. (Tucson, AZ)

2001-01-01T23:59:59.000Z

159

Nanotube resonator devices  

DOE Patents [OSTI]

A fully-functional radio receiver fabricated from a single nanotube is being disclosed. Simultaneously, a single nanotube can perform the functions of all major components of a radio: antenna, tunable band-pass filter, amplifier, and demodulator. A DC voltage source, as supplied by a battery, can power the radio. Using carrier waves in the commercially relevant 40-400 MHz range and both frequency and amplitude modulation techniques, successful music and voice reception has been demonstrated. Also disclosed are a radio transmitter and a mass sensor using a nanotube resonator device.

Jensen, Kenneth J; Zettl, Alexander K; Weldon, Jeffrey A

2014-05-06T23:59:59.000Z

160

Device Performance  

SciTech Connect (OSTI)

In the Device Performance group, within the National Center for Photovoltaic's Measurements and Characterization Division, we measure the performance of PV cells and modules with respect to standard reporting conditions--defined as a reference temperature (25 C), total irradiance (1000 Wm-2), and spectral irradiance distribution (IEC standard 60904-3). Typically, these are ''global'' reference conditions, but we can measure with respect to any reference set. To determine device performance, we conduct two general categories of measurements: spectral responsivity (SR) and current versus voltage (I-V). We usually perform these measurements using standard procedures, but we develop new procedures when required by new technologies. We also serve as an independent facility for verifying device performance for the entire PV community. We help the PV community solve its special measurement problems, giving advice on solar simulation, instrumentation for I-V measurements, reference cells, measurement procedures, and anomalous results. And we collaborate with researchers to analyze devices and materials.

Not Available

2006-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
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161

Microchannel devices  

SciTech Connect (OSTI)

The fabrication of stainless steel microchannel heat exchangers was examined through microlamination, the process of diffusion bonding precision machined metallic foils. The influence of diffusion bonding parameters, as well as the device geometry on the strength of the bond between the foils and embedded channel integrity, was investigated. During diffusion bonding, high temperatures and/or pressures result in well bonded foils, but these conditions cause the embedded channels to deform, which will degrade the efficiency of fluid flow through the channels. Alternatively, low temperatures and/or pressures result in undeformed channels but weakly bonded foils. This causes failure of the device due to fluid leakage. Thus, a processing envelope exists for producing a sound device with no fluid leakage and no degradation of fluid flow properties. The theoretical limit on aspect ratio within two-fluid counter-flow microchannel heat exchangers was also investigated. A counter-flow device is comprised of alternating layers of microchannels, which allow the two fluids to flow in opposite directions separated by fins. A theoretical model for interpreting the span of the fin as a function of the fin thickness was established. The model was verified experimentally by fabricating specimens to simulate the counter-flow device. The results of these investigations were used to aid in the design and processing of prototype microchannel devices.

Alman, David E.; Wilson, Rick D.

2001-09-01T23:59:59.000Z

162

Formal analysis of device authentication applications in ubiquitous computing.  

SciTech Connect (OSTI)

Authentication between mobile devices in ad-hoc computing environments is a challenging problem. Without pre-shared knowledge, existing applications rely on additional communication methods, such as out-of-band or location-limited channels for device authentication. However, no formal analysis has been conducted to determine whether out-of-band channels are actually necessary. We answer this question through formal analysis, and use BAN logic to show that device authentication using a single channel is not possible.

Shin, Dongwan (New Mexico Tech, Socorro, NM); Claycomb, William R.

2010-11-01T23:59:59.000Z

163

Plasma jet ignition device  

DOE Patents [OSTI]

An ignition device of the plasma jet type is disclosed. The device has a cylindrical cavity formed in insulating material with an electrode at one end. The other end of the cylindrical cavity is closed by a metal plate with a small orifice in the center which plate serves as a second electrode. An arc jumping between the first electrode and the orifice plate causes the formation of a highly-ionized plasma in the cavity which is ejected through the orifice into the engine cylinder area to ignite the main fuel mixture. Two improvements are disclosed to enhance the operation of the device and the length of the plasma plume. One improvement is a metal hydride ring which is inserted in the cavity next to the first electrode. During operation, the high temperature in the cavity and the highly excited nature of the plasma breaks down the metal hydride, liberating hydrogen which acts as an additional fuel to help plasma formation. A second improvement consists of a cavity insert containing a plurality of spaced, metal rings. The rings act as secondary spark gap electrodes reducing the voltage needed to maintain the initial arc in the cavity.

McIlwain, Michael E. (Franklin, MA); Grant, Jonathan F. (Wayland, MA); Golenko, Zsolt (North Reading, MA); Wittstein, Alan D. (Fairfield, CT)

1985-01-15T23:59:59.000Z

164

Controllable spin-charge transport in strained graphene nanoribbon devices  

SciTech Connect (OSTI)

We theoretically investigate the spin-charge transport in two-terminal device of graphene nanoribbons in the presence of a uniform uniaxial strain, spin-orbit coupling, exchange field, and smooth staggered potential. We show that the direction of applied strain can efficiently tune strain-strength induced oscillation of band-gap of armchair graphene nanoribbon (AGNR). It is also found that electronic conductance in both AGNR and zigzag graphene nanoribbon (ZGNR) oscillates with Rashba spin-orbit coupling akin to the Datta-Das field effect transistor. Two distinct strain response regimes of electronic conductance as function of spin-orbit couplings magnitude are found. In the regime of small strain, conductance of ZGNR presents stronger strain dependence along the longitudinal direction of strain. Whereas for high values of strain shows larger effect for the transversal direction. Furthermore, the local density of states shows that depending on the smoothness of the staggered potential, the edge states of AGNR can either emerge or be suppressed. These emerging states can be determined experimentally by either spatially scanning tunneling microscope or by scanning tunneling spectroscopy. Our findings open up new paradigms of manipulation and control of strained graphene based nanostructure for application on novel topological quantum devices.

Diniz, Ginetom S., E-mail: ginetom@gmail.com; Guassi, Marcos R. [Institute of Physics, University of Brasília, 70919-970, Brasília-DF (Brazil); Qu, Fanyao [Institute of Physics, University of Brasília, 70919-970, Brasília-DF (Brazil); Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

2014-09-21T23:59:59.000Z

165

In-situ characterization of growth and interfaces in a-Si:H devices. Annual subcontract report, 1 May 1992--30 April 1993  

SciTech Connect (OSTI)

This report describes work to reach two goals--an individual goal and a wide-gap team goal. The individual goal was to investigate the ``top junction`` for defects using the spectroscopic ellipsometry technique. This will include an evaluation if specific defects are associated with C, B, Sn (diffusing from the transparent conducting oxide [TCO]) or Na (diffusing from the glass). It may include an assessment of the function of a graded a-SiC:H buffer layer. As defects are identified and characterized, their influence on the transport properties will be assessed. This should lead to better parameters used as input to models for the electronic materials and device performance. The goal of the wide-gap team was to demonstrate, characterize, and understand improved doped and undoped ``wide gap`` materials for use in achieving 15%-efficient stabilized photovoltaic modules (``wide gap`` materials are defined by this team to have a band gap {ge} 1.9 eV). The major conclusions of the research are discussed in the report.

Collins, R.W.; Wronski, C.R.; An, I.; Lu, Y.; Nguyen, H.V. [Pennsylvania State Univ., University Park, PA (United States)

1994-02-01T23:59:59.000Z

166

The Pennsylvania State University Marching Blue Band Blue Band Office  

E-Print Network [OSTI]

The Pennsylvania State University Marching Blue Band Press Kit Blue Band Office 101 Blue Band Director vcc2@psu.edu orb1@psu.edu gad157@psu.edu (814) 865 - 3982 #12;History of the Blue Band The Marching Blue Band numbers 310 members which includes: 260 instrumentalists, 34 silks, 14 Touch of Blue

Maroncelli, Mark

167

Multiband semiconductor compositions for photovoltaic devices  

DOE Patents [OSTI]

The highly mismatched alloy Zn1-yMnyOxTe1-x, 0.ltoreq.y<1 and 0band of extended states located within the band gap of the Zn1-yMnyTe host. With multiple band gaps that fall within the solar energy spectrum, Zn1-yMnyOxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

Walukiewicz, Wladyslaw; Yu, Kin Man; Wu, Junqiao

2010-05-04T23:59:59.000Z

168

Multiband semiconductor compositions for photovoltaic devices  

DOE Patents [OSTI]

The highly mismatched alloy Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x, 0.ltoreq.y<1 and 0band of extended states located within the band gap of the Zn.sub.1-yMn.sub.yTe host. With multiple band gaps that fall within the solar energy spectrum, Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

Walukiewicz, Wladyslaw (Kensington, CA); Yu, Kin Man (Lafayette, CA); Wu, Junqiao (Belmont, MA)

2012-03-06T23:59:59.000Z

169

Band anticrossing effects in highly mismatched semiconductor alloys  

SciTech Connect (OSTI)

The first five chapters of this thesis focus on studies of band anticrossing (BAC) effects in highly electronegativity- mismatched semiconductor alloys. The concept of bandgap bowing has been used to describe the deviation of the alloy bandgap from a linear interpolation. Bowing parameters as large as 2.5 eV (for ZnSTe) and close to zero (for AlGaAs and ZnSSe) have been observed experimentally. Recent advances in thin film deposition techniques have allowed the growth of semiconductor alloys composed of significantly different constituents with ever- improving crystalline quality (e.g., GaAs{sub 1-x}N{sub x} and GaP{sub 1-x}N{sub x} with x {approx}< 0.05). These alloys exhibit many novel and interesting properties including, in particular, a giant bandgap bowing (bowing parameters > 14 eV). A band anticrossing model has been developed to explain these properties. The model shows that the predominant bowing mechanism in these systems is driven by the anticrossing interaction between the localized level associated with the minority component and the band states of the host. In this thesis I discuss my studies of the BAC effects in these highly mismatched semiconductors. It will be shown that the results of the physically intuitive BAC model can be derived from the Hamiltonian of the many-impurity Anderson model. The band restructuring caused by the BAC interaction is responsible for a series of experimental observations such as a large bandgap reduction, an enhancement of the electron effective mass, and a decrease in the pressure coefficient of the fundamental gap energy. Results of further experimental investigations of the optical properties of quantum wells based on these materials will be also presented. It will be shown that the BAC interaction occurs not only between localized states and conduction band states at the Brillouin zone center, but also exists over all of k-space. Finally, taking ZnSTe and ZnSeTe as examples, I show that BAC also occurs between localized states and the valence band states. Soft x-ray fluorescence experiments provide direct evidence of the BAC interaction in these systems. In the final chapter of the thesis, I describe and summarize my studies of optical properties of wurtzite InN and related alloys. Early studies performed on InN films grown by sputtering techniques suggested a direct bandgap of {approx}1.9 eV for this semiconductor. Very recently, high-quality InN films with much higher mobility have become available by using the molecular beam epitaxy growth method. Optical experiments carried out on these samples reveal a narrow bandgap for InN of 0.77 eV, much lower than the previously accepted value. Optical properties of InGaN and InAlN ternaries on the In rich side have also been characterized and are found to be consistent with the narrow bandgap of InN. The bandgap bowing parameters in these alloys were determined. In the context of these findings, the bandgap energies of InGaN and InAlN were found to cover a wide spectral range from the infrared for InN to the ultraviolet for GaN and deep ultraviolet for AlN. The significance of this work is rooted in many important applications of nitride semiconductors in optoelectronics and solar energy conversion devices.

Wu, Junqiao

2002-09-09T23:59:59.000Z

170

Conservation notes BIRD BANDING  

E-Print Network [OSTI]

--,?1 (' Conservation notes BIRD BANDING The Hows and Whys Three Pintail ducks from North America Stewart L,. Udall, Sectetaty FISH AND WILDLIFE SERVICE #12;#12;'"'^^ ''^ "^ CONSERVATION NOTES BIRD

171

Detection device  

DOE Patents [OSTI]

The present invention is directed to a detection device comprising: (1) an entrance chamber; (2) a central chamber; and (3) an exit chamber. The central chamber includes an ionizing gas, anode, and means for connecting the anode with an external power supply and pulse counter.

Smith, J.E.

1981-02-27T23:59:59.000Z

172

Electrochemical device  

DOE Patents [OSTI]

A tunnel protected electrochemical device features channels fluidically communicating between manifold, tunnels and cells. The channels are designed to provide the most efficient use of auxiliary power. The channels have a greater hydraulic pressure drop and electrical resistance than the manifold. This will provide a design with the optimum auxiliary energy requirements.

Grimes, Patrick G. (Westfield, NJ); Einstein, Harry (Springfield, NJ); Bellows, Richard J. (Westfield, NJ)

1988-01-12T23:59:59.000Z

173

Triaxial strongly deformed bands in {sup 164}Hf and the effect of elevated yrast line  

SciTech Connect (OSTI)

Two exotic rotational bands have been identified in {sup 164}Hf and linked to known states. They are interpreted as being associated with the calculated triaxial strongly deformed (TSD) potential energy minimum. The bands are substantially stronger and are located at much lower spins than the previously discovered TSD bands in {sup 168}Hf. In addition to the proton and neutron shell gaps at large trixiality, it was proposed that the relative excitation energy of TSD bands above the yrast line plays an important role in the population of TSD bands.

Ma Wenchao [Department of Physics, Mississippi State University, Mississippi State, MS 39762 (United States)

2012-10-20T23:59:59.000Z

174

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

175

Laser device  

DOE Patents [OSTI]

A laser device includes a virtual source configured to aim laser energy that originates from a true source. The virtual source has a vertical rotational axis during vertical motion of the virtual source and the vertical axis passes through an exit point from which the laser energy emanates independent of virtual source position. The emanating laser energy is collinear with an orientation line. The laser device includes a virtual source manipulation mechanism that positions the virtual source. The manipulation mechanism has a center of lateral pivot approximately coincident with a lateral index and a center of vertical pivot approximately coincident with a vertical index. The vertical index and lateral index intersect at an index origin. The virtual source and manipulation mechanism auto align the orientation line through the index origin during virtual source motion.

Scott, Jill R. (Idaho Falls, ID); Tremblay, Paul L. (Idaho Falls, ID)

2008-08-19T23:59:59.000Z

176

Mobile Device Guide Google Android based devices  

E-Print Network [OSTI]

Mobile Device Guide ­ Google Android based devices CSUF Date Last Revised: 1/20/11 Page 1 of 3;Mobile Device Guide ­ Google Android based devices CSUF Date Last Revised: 1/20/11 Page 2 of 3 2. Under' with your campus username and enter your password (case sensitive). 4. Tap `next'. #12;Mobile Device Guide

de Lijser, Peter

177

Broad Band Photon Harvesting Biomolecules for Photovoltaics  

E-Print Network [OSTI]

We discuss the key principles of artificial photosynthesis for photovoltaic energy conversion. We demonstrate these principles by examining the operation of the so-called "dye sensitized solar cell" (DSSC) - a photoelectrochemical device which simulates the charge separation process across a nano-structured membrane that is characteristic of natural systems. These type of devices have great potential to challenge silicon semiconductor technology in the low cost, medium efficiency segment of the PV market. Ruthenium charge transfer complexes are currently used as the photon harvesting components in DSSCs. They produce a relatively broad band UV and visible response, but have long term stability problems and are expensive to manufacture. We suggest that a class of biological macromolecules called the melanins may be suitable replacements for the ruthenium complexes. They have strong, broad band absorption, are chemically and photochemically very stable, can be cheaply and easily synthesized, and are also bio-available and bio-compatible. We demonstrate a melanin-based regenerative solar cell, and discuss the key properties that are necessary for an effective broad band photon harvesting system.

P. Meredith; B. J. Powell; J. Riesz; R. Vogel; D. Blake; I. Kartini; G. Will; S. Subianto

2004-06-04T23:59:59.000Z

178

Electrochromic device  

DOE Patents [OSTI]

An electrochromic device includes a first substrate spaced from a second substrate. A first conductive member is formed over at least a portion of the first substrate. A first electrochromic material is formed over at least a portion of the first conductive member. The first electrochromic material includes an organic material. A second conductive member is formed over at least a portion of the second substrate. A second electrochromic material is formed over at least a portion of the second conductive member. The second electrochromic material includes an inorganic material. An ionic liquid is positioned between the first electrochromic material and the second electrochromic material.

Schwendemanm, Irina G. (Wexford, PA); Polcyn, Adam D. (Pittsburgh, PA); Finley, James J. (Pittsburgh, PA); Boykin, Cheri M. (Kingsport, TN); Knowles, Julianna M. (Apollo, PA)

2011-03-15T23:59:59.000Z

179

OLED devices  

DOE Patents [OSTI]

An OLED device having an emission layer formed of an ambipolar phosphine oxide host material and a dopant, a hole transport layer in electrical communication with an anode, an electron transport layer in communication with a cathode, wherein the HOMO energy of the hole transport layer is substantially the same as the HOMO energy of the ambipolar host in the emission layer, and the LUMO energy of the electron transport layer is substantially the same as the LUMO energy of the ambipolar host in the emission layer.

Sapochak, Linda Susan [Arlington, VA; Burrows, Paul Edward [Kennewick, WA; Bimalchandra, Asanga [Richland, WA

2011-02-22T23:59:59.000Z

180

Diversionary device  

DOE Patents [OSTI]

A diversionary device has a housing having at least one opening and containing a non-explosive propellant and a quantity of fine powder packed within the housing, with the powder being located between the propellant and the opening. When the propellant is activated, it has sufficient energy to propel the powder through the opening to produce a cloud of powder outside the housing. An igniter is also provided for igniting the cloud of powder to create a diversionary flash and bang, but at a low enough pressure to avoid injuring nearby people.

Grubelich, Mark C. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Interconnector device  

SciTech Connect (OSTI)

This patent describes an interconnector device that allows a lithium-type battery to be substituted for a Leclanche battery. The Leclanche battery is of predetermined dimensions and has a pair of coil spring connection terminals at predetermined locations on the top surface thereof. The lithium battery of different predetermined dimensions than the Lechanche battery and has a pair of female connection sockets positioned at a predetermined off-center location on the top surface. The locations of the coil spring terminals and the connection sockets of the respective batteries are at substantially different non-matching positions, comprising a thin flat water of non-conducive material of predetermined size and configuration, the wafer having the same cross-section dimensions as the Leclanche battery. A pair of prongs on the underside surface of the wafer and at locations correspond to the locations of the female connection sockets of the lithium battery. The prongs received into the female connection sockets when the interconnector device is mounted on the lithium batter. A pair of coil spring connection terminals mounted on the opposite of top surface of the wafer and having a configuration which matches that of the connection terminals of the Leclanche battery and positioned at locations which corresponds to the locations of the coil spring connection terminals of the Leclanche battery. A pair of electrical conductors plated on the underside surface of the wafer for respectively interconnecting the pairs of prongs and the pair of coil spring connection terminals in parallel.

Christopulos, J.A.

1987-07-07T23:59:59.000Z

182

Thermoplastic tape compaction device  

DOE Patents [OSTI]

A device is disclosed for bonding a thermoplastic tape to a substrate to form a fully consolidated composite. This device has an endless chain associated with a frame so as to rotate in a plane that is perpendicular to a long dimension of the tape, the chain having pivotally connected chain links with each of the links carrying a flexible foot member that extends outwardly from the chain. A selected number of the foot members contact the tape, after the heating thereof, to cause the heated tape to bond to the substrate. The foot members are each a thin band of metal oriented transversely to the chain, with a flexibility and width and length to contact the tape so as to cause the tape to conform to the substrate to achieve consolidation of the tape and the substrate. A biased leaf-type spring within the frame bears against an inner surface of the chain to provide the compliant pressure necessary to bond the tape to the substrate. The chain is supported by sprockets on shafts rotatably supported in the frame and, in one embodiment, one of the shafts has a drive unit to produce rotation such that the foot members in contact with the tape move at the same speed as the tape. Cooling jets are positioned along the frame to cool the resultant consolidated composite. 5 figures.

Campbell, V.W.

1994-12-27T23:59:59.000Z

183

Virtual gap dielectric wall accelerator  

DOE Patents [OSTI]

A virtual, moving accelerating gap is formed along an insulating tube in a dielectric wall accelerator (DWA) by locally controlling the conductivity of the tube. Localized voltage concentration is thus achieved by sequential activation of a variable resistive tube or stalk down the axis of an inductive voltage adder, producing a "virtual" traveling wave along the tube. The tube conductivity can be controlled at a desired location, which can be moved at a desired rate, by light illumination, or by photoconductive switches, or by other means. As a result, an impressed voltage along the tube appears predominantly over a local region, the virtual gap. By making the length of the tube large in comparison to the virtual gap length, the effective gain of the accelerator can be made very large.

Caporaso, George James; Chen, Yu-Jiuan; Nelson, Scott; Sullivan, Jim; Hawkins, Steven A

2013-11-05T23:59:59.000Z

184

Strained-Si1-xGex/Si Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior  

E-Print Network [OSTI]

Strained pseudomorphic Si/Si [subscript 1-x]Ge [subscript x]/Si gate-controlled band-to-band tunneling (BTBT) devices have been analyzed with varying Ge composition up to 57% and p+ tunnel-junction (source) doping concentration ...

Antoniadis, Dimitri A.

185

Majorana Flat Bands in s-Wave Gapless Topological Superconductors  

E-Print Network [OSTI]

We demonstrate how the non-trivial interplay between spin-orbit coupling and nodeless $s$-wave superconductivity can drive a fully gapped two-band topological insulator into a time-reversal invariant gapless topological superconductor supporting symmetry-protected Majorana flat bands. We characterize topological phase diagrams by a ${\\mathbb Z}_2 \\times{\\mathbb Z}_2$ partial Berry-phase invariant, and show that, despite the trivial crystal geometry, no unique bulk-boundary correspondence exists. We trace this behavior to the anisotropic quasiparticle bulk gap closing, linear vs. quadratic, and argue that this provides a unifying principle for gapless topological superconductivity. Experimental implications for tunneling conductance measurements are addressed, relevant for lead chalcogenide materials.

Shusa Deng; Gerardo Ortiz; Amrit Poudel; Lorenza Viola

2014-04-28T23:59:59.000Z

186

Modeling integrated photovoltaic-electrochemical devices using steady-state equivalent circuits  

E-Print Network [OSTI]

We describe a framework for efficiently coupling the power output of a series-connected string of single-band-gap solar cells to an electrochemical process that produces storable fuels. We identify the fundamental efficiency ...

Winkler, Mark Thomas

187

Highly Mismatched Alloys for Intermediate Band Solar Cells  

SciTech Connect (OSTI)

It has long been recognized that the introduction of a narrow band of states in a semiconductor band gap could be used to achieve improved power conversion efficiency in semiconductor-based solar cells. The intermediate band would serve as a ''stepping stone'' for photons of different energy to excite electrons from the valence to the conduction band. An important advantage of this design is that it requires formation of only a single p-n junction, which is a crucial simplification in comparison to multijunction solar cells. A detailed balance analysis predicts a limiting efficiency of more than 50% for an optimized, single intermediate band solar cell. This is higher than the efficiency of an optimized two junction solar cell. Using ion beam implantation and pulsed laser melting we have synthesized Zn{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys with x<0.03. These highly mismatched alloys have a unique electronic structure with a narrow oxygen-derived intermediate band. The width and the location of the band is described by the Band Anticrossing model and can be varied by controlling the oxygen content. This provides a unique opportunity to optimize the absorption of solar photons for best solar cell performance. We have carried out systematic studies of the effects of the intermediate band on the optical and electrical properties of Zn{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys. We observe an extension of the photovoltaic response towards lower photon energies, which is a clear indication of optical transitions from the valence to the intermediate band.

Walukiewicz, W.; Yu, K.M.; Wu, J.; Ager III, J.W.; Shan, W.; Scrapulla, M.A.; Dubon, O.D.; Becla, P.

2005-03-21T23:59:59.000Z

188

W-Band Sheet Beam Klystron Design  

SciTech Connect (OSTI)

Sheet beam devices provide important advantages for very high power, narrow bandwidth RF sources like accelerator klystrons [1]. Reduced current density and increased surface area result in increased power capabi1ity, reduced magnetic fields for focusing and reduced cathode loading. These advantages are offset by increased complexity, beam formation and transport issues and potential for mode competition in the ovennoded cavities and drift tube. This paper will describe the design issues encountered in developing a 100 kW peak and 2 kW average power sheet beam k1ystron at W-band including beam formation, beam transport, circuit design, circuit fabrication and mode competition.

Scheitrum, G.; Caryotakis, G.; Burke, A.; Jensen, A.; Jongewaard, E.a Krasnykh, A.; Neubauer, M.; Phillips, R.; Rauenbuehler, K.; /SLAC

2011-11-11T23:59:59.000Z

189

Multiple input electrode gap controller  

DOE Patents [OSTI]

A method and apparatus for controlling vacuum arc remelting (VAR) furnaces by estimation of electrode gap based on a plurality of secondary estimates derived from furnace outputs. The estimation is preferably performed by Kalman filter. Adaptive gain techniques may be employed, as well as detection of process anomalies such as glows. 17 figs.

Hysinger, C.L.; Beaman, J.J.; Melgaard, D.K.; Williamson, R.L.

1999-07-27T23:59:59.000Z

190

Band crossing in a shears band of {sup 108}Cd  

SciTech Connect (OSTI)

The level lifetimes have been measured for a shears band of {sup 108}Cd that exhibits band crossing. The observed level energies and B(M1) rates have been successfully described by a semiclassical geometric model based on shear mechanism. In this geometric model, the band crossing in the shears band has been described as the reopening of the angle between the blades of a shear.

Roy, Santosh; Datta, Pradip; Pal, S.; Chattopadhyay, S.; Bhattacharya, S.; Goswami, A.; Jain, H. C.; Joshi, P. K.; Bhowmik, R. K.; Kumar, R.; Muralithar, S.; Singh, R. P.; Madhavan, N.; Rao, P. V. Madhusudhana [S. N. Bose National Centre for Basic Sciences. Block JD, Sector III, Saltlake City, Kolkata 700098 (India); iThemba Labs, Post Office Box 722, Somerset West 7129 (South Africa); Saha Institute of Nuclear Physics, 1/AF Bidhannager Kolkata, 700 064 (India); Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400 005 (India); Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Department of Physics, Andra University, Visakhapatnam 530 003 (India)

2010-05-15T23:59:59.000Z

191

Laser device  

DOE Patents [OSTI]

A laser device includes a target position, an optical component separated a distance J from the target position, and a laser energy source separated a distance H from the optical component, distance H being greater than distance J. A laser source manipulation mechanism exhibits a mechanical resolution of positioning the laser source. The mechanical resolution is less than a spatial resolution of laser energy at the target position as directed through the optical component. A vertical and a lateral index that intersect at an origin can be defined for the optical component. The manipulation mechanism can auto align laser aim through the origin during laser source motion. The laser source manipulation mechanism can include a mechanical index. The mechanical index can include a pivot point for laser source lateral motion and a reference point for laser source vertical motion. The target position can be located within an adverse environment including at least one of a high magnetic field, a vacuum system, a high pressure system, and a hazardous zone. The laser source and an electro-mechanical part of the manipulation mechanism can be located outside the adverse environment. The manipulation mechanism can include a Peaucellier linkage.

Scott, Jill R. (Idaho Falls, ID); Tremblay, Paul L. (Idaho Falls, ID)

2007-07-10T23:59:59.000Z

192

Emplacement Gantry Gap Analysis Study  

SciTech Connect (OSTI)

To date, the project has established important to safety (ITS) performance requirements for structures, systems, and components (SSCs) based on the identification and categorization of event sequences that may result in a radiological release. These performance requirements are defined within the ''Nuclear Safety Design Bases for License Application'' (NSDB) (BSC 2005 [DIRS 171512], Table A-11). Further, SSCs credited with performing safety functions are classified as ITS. In turn, assurance that these SSCs will perform as required is sought through the use of consensus codes and standards. This gap analysis is based on the design completed for license application only. Accordingly, identification of ITS SSCs beyond those defined within the NSDB are based on designs that may be subject to further development during detail design. Furthermore, several design alternatives may still be under consideration to satisfy certain safety functions, and final selection will not be determined until further design development has occurred. Therefore, for completeness, alternative designs currently under consideration will be discussed throughout this study. This gap analysis will evaluate each code and standard identified within the ''Emplacement Gantry ITS Standards Identification Study'' (BSC 2005 [DIRS 173586]) to ensure each ITS performance requirement is fully satisfied. When a performance requirement is not fully satisfied, a gap is highlighted. This study will identify requirements to supplement or augment the code or standard to meet performance requirements. Further, this gap analysis will identify nonstandard areas of the design that will be subject to a design development plan. Nonstandard components and nonstandard design configurations are defined as areas of the design that do not follow standard industry practices or codes and standards. Whereby, assurance that an SSC will perform as required may not be readily sought though the use of consensus standards. This gap analysis is prepared by the Emplacement and Retrieval (E&R) project team and is intended for the sole use of the Engineering department in work regarding the emplacement gantry. Yucca Mountain Project personnel from the E&R project team should be consulted before use of this gap analysis for purposes other than those stated herein or by individuals other than authorized by the Engineering department.

R. Thornley

2005-05-27T23:59:59.000Z

193

Hard-gapped Holographic Superconductors  

E-Print Network [OSTI]

In this work we discuss the zero temperature limit of a "p-wave" holographic superconductor. The bulk description consists of a non-Abelian SU(2) gauge fields minimally coupled to gravity. We numerically construct the zero temperature solution which is the gravity dual of the superconducting ground state of the "p-wave" holographic superconductors. The solution is a smooth soliton with zero horizon size and shows an emergent conformal symmetry in the IR. We found the expected superconducting behavior. Using the near horizon analysis we show that the system has a "hard gap" for the relevant gauge field fluctuations. At zero temperature the real part of the conductivity is zero for an excitation frequency less than the gap frequency. This is in contrast with what has been observed in similar scalar- gravity-gauge systems (holographic superconductors). We also discuss the low but finite temperature behavior of our solution.

Pallab Basu; Jianyang He; Anindya Mukherjee; Hsien-Hang Shieh

2009-12-05T23:59:59.000Z

194

Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO{sub 2{+-}x}  

SciTech Connect (OSTI)

We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO{sub 2{+-}x} grown by reactive molecular beam epitaxy. The oxidation conditions induce a switching between (111) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and p-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany)

2012-12-01T23:59:59.000Z

195

Medical Device Reliability BIOMATERIALS  

E-Print Network [OSTI]

NEMI Medical Electronics team to address short- and long-term reliability issues with medical devices. OurMedical Device Reliability BIOMATERIALS Our goal is to provide medical device manufacturers, and consistency of active implantable medical devices. These devices, including pacemakers, cardiac defibrillators

196

Intrinsic electron and hole bands in electron-doped cuprate superconductors  

SciTech Connect (OSTI)

We propose that the upper Hubbard band (electron-like) and the Zhang-Rice singlet band (holelike) are two essential components in describing low-energy excitations of electron-doped cuprate superconductors. We find that the gap between these two bands is significantly smaller than the charge-transfer gap measured by optics and is further reduced upon doping. This indicates that the charge fluctuation is strong and the system is in the intermediate correlation regime. A two-band model is derived. In the limit that the intraband and interband hopping integrals are equal to each other, this model is equivalent to the unconstrained t-J model with on-site Coulomb repulsions.

Xiang, T.

2010-02-24T23:59:59.000Z

197

Connector device for building integrated photovoltaic device  

SciTech Connect (OSTI)

The present invention is premised upon a connector device and method that can more easily electrically connect a plurality of PV devices or photovoltaic system components and/or locate these devices/components upon a building structure. It also may optionally provide some additional sub-components (e.g. at least one bypass diode and/or an indicator means) and may enhance the serviceability of the device.

Keenihan, James R.; Langmaid, Joseph A.; Eurich, Gerald K.; Lesniak, Michael J.; Mazor, Michael H.; Cleereman, Robert J.; Gaston, Ryan S.

2014-06-03T23:59:59.000Z

198

Calibration curves for some standard Gap Tests  

SciTech Connect (OSTI)

The relative shock sensitivities of explosive compositions are commonly assessed using a family of experiments that can be described by the generic term ''Gap Test.'' Gap tests include a donor charge, a test sample, and a spacer, or gap, between two explosives charges. The donor charge, gap material, and test dimensions are held constant within each different version of the gap test. The thickness of the gap is then varied to find the value at which 50% of the test samples will detonate. The gap tests measure the ease with a high-order detonation can be established in the test explosive, or the ''detonability,'' of the explosive. Test results are best reported in terms of the gap thickness at the 50% point. It is also useful to define the shock pressure transmitted into the test sample at the detonation threshold. This requires calibrating the gap test in terms of shock pressure in the gap as a function of the gap thickness. It also requires a knowledge of the shock Hugoniot of the sample explosive. We used the 2DE reactive hydrodynamic code with Forest Fire burn rates for the donor explosives to calculate calibration curves for several gap tests. The model calculations give pressure and particle velocity on the centerline of the experimental set-up and provide information about the curvature and pulse width of the shock wave. 10 refs., 1 fig.

Bowman, A.L.; Sommer, S.C.

1989-01-01T23:59:59.000Z

199

Air Gap Tunin Yilin Mao, Yashwanth  

E-Print Network [OSTI]

Air Gap Tunin Yilin Mao, Yashwanth Electrical Engineering Departm The Unive ymao1@olemiss.edu, ypadooru@ Abstract-- An adjustable air gap was proposed the resonant frequency of patch antennas the frequency of coaxially fed p center conductor has to be de-soldered and r time the width of the air gap

Elsherbeni, Atef Z.

200

Generation Gaps in Engineering? David J. Kim  

E-Print Network [OSTI]

Generation Gaps in Engineering? by David J. Kim B.S., Computer Science and Engineering;3 Generation Gaps in Engineering? by David J. Kim Submitted to the System Design and Management Program on May in Engineering and Management ABSTRACT There is much enthusiastic debate on the topic of generation gaps

Gabrieli, John

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Operated device estimation framework  

E-Print Network [OSTI]

Protective device estimation is a challenging task because there are numerous protective devices present in a typical distribution system. Among various protective devices, auto-reclosers and fuses are the main overcurrent protection on distribution...

Rengarajan, Janarthanan

2009-05-15T23:59:59.000Z

202

Band-engineered SrTiO{sub 3} nanowires for visible light photocatalysis  

SciTech Connect (OSTI)

We have theoretically investigated the structural, electronic, and optical properties of perovskite SrTiO{sub 3} nanowires for use in visible light photocatalytic applications using pseudopotential density-functional theory calculations. The electronic structure calculations show that the band gap is modified in the SrTiO{sub 3} nanowires compared with that of the bulk. For TiO{sub 2}-terminated nanowires, the mid-band states induced by the combination of oxygen and strontium atoms on the surface lead to a shift in the valence band toward the conduction band without interference from the edge of the conduction band, which reduces the band gap. On the contrary, the electronic states induced by the combination of oxygen and strontium atoms on the surface of SrO-terminated nanowires lead to a shift in the conduction band toward the valence band. The calculated optical results indicate that the absorption edge of the nanowires shift towards the red-light region. These theoretical results suggest that perovskite SrTiO{sub 3} nanowires are promising candidates for use in visible light photocatalytic processes such as solar-assisted water splitting reactions.

Fu, Q.; He, T.; Li, J. L.; Yang, G. W. [State Key Laboratory of Optoelectronic Materials and Technologies, Institute of Optoelectronic and Functional Composite Materials, Nanotechnology Research Center, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong (China)

2012-11-15T23:59:59.000Z

203

FAQS Gap Analysis Qualification Card - Senior Technical Safety...  

Office of Environmental Management (EM)

Gap Analysis Qualification Card - Senior Technical Safety Manager FAQS Gap Analysis Qualification Card - Senior Technical Safety Manager Functional Area Qualification Standard Gap...

204

Coupling of nitrogen-vacancy centers in diamond to a GaP waveguide  

E-Print Network [OSTI]

The optical coupling of guided modes in a GaP waveguide to nitrogen-vacancy (NV) centers in diamond is demonstrated. The electric field penetration into diamond and the loss of the guided mode are measured. The results indicate that the GaP-diamond system could be useful for realizing coupled microcavity-NV devices for quantum information processing in diamond.

K. -M. C. Fu; C. Santori; P. E. Barclay; I. Aharonovich; S. Prawer; N. Meyer; A. M. Holm; R. G. Beausoleil

2008-11-03T23:59:59.000Z

205

Ultra high vacuum broad band high power microwave window  

DOE Patents [OSTI]

An improved high vacuum microwave window has been developed that utilizes high density polyethylene coated on two sides with SiOx, SiNx, or a combination of the two. The resultant low dielectric and low loss tangent window creates a low outgassing, low permeation seal through which broad band, high power microwave energy may be passed. No matching device is necessary and the sealing technique is simple. The features of the window are broad band transmission, ultra-high vacuum compatibility with a simple sealing technique, low voltage standing wave ratio, high power transmission and low cost.

Nguyen-Tuong, Viet (Seaford, VA); Dylla, III, Henry Frederick (Yorktown, VA)

1997-01-01T23:59:59.000Z

206

Ultra high vacuum broad band high power microwave window  

DOE Patents [OSTI]

An improved high vacuum microwave window has been developed that utilizes high density polyethylene coated on two sides with SiOx, SiNx, or a combination of the two. The resultant low dielectric and low loss tangent window creates a low outgassing, low permeation seal through which broad band, high power microwave energy may be passed. No matching device is necessary and the sealing technique is simple. The features of the window are broad band transmission, ultra-high vacuum compatibility with a simple sealing technique, low voltage standing wave ratio, high power transmission and low cost. 5 figs.

Nguyen-Tuong, V.; Dylla, H.F. III

1997-11-04T23:59:59.000Z

207

Evidence of Eu{sup 2+} 4f electrons in the valence band spectra of EuTiO{sub 3} and EuZrO{sub 3}  

SciTech Connect (OSTI)

We report on optical band gap and valence electronic structure of two Eu{sup 2+}-based perovskites, EuTiO{sub 3} and EuZrO{sub 3} as revealed by diffuse optical scattering, electron energy loss spectroscopy, and valence-band x-ray photoelectron spectroscopy. The data show good agreement with the first-principles studies in which the top of the valence band structure is formed by the narrow Eu 4f{sup 7} electron band. The O 2p band shows the features similar to those of the Ba(Sr)TiO{sub 3} perovskites except that it is shifted to higher binding energies. Appearance of the Eu{sup 2+} 4f{sup 7} band is a reason for narrowing of the optical band gap in the title compounds as compared to their Sr-based analogues.

Kolodiazhnyi, T. [National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Valant, M. [Materials Research Laboratory, University of Nova Gorica, Vipavska 13, 5000 Nova Gorica (Slovenia); Williams, J. R. [International Center for Young Scientists (ICYS), MANA, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Bugnet, M.; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Ohashi, N. [International Center for Materials Nanoarchitectonics, MANA, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Sakka, Y. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

2012-10-15T23:59:59.000Z

208

Anchoring energy and cell gap effects on liquid crystal response time Xiangyi Nie, Ruibo Lu, Haiqing Xianyu, Thomas X. Wu, and Shin-Tson Wua  

E-Print Network [OSTI]

assumption is that the anchoring energy on LC-substrate surfaces is strong W . However, some LC devices haveAnchoring energy and cell gap effects on liquid crystal response time Xiangyi Nie, Ruibo Lu 2007 The anchoring energy and cell gap effects on liquid crystal response time 0 is analyzed

Wu, Shin-Tson

209

Goncu, JASA-EL Exploiting pattern transformation to tune phononic band  

E-Print Network [OSTI]

.05 × 103 kg/m3 , Young's modulus Er = 360 kPa, shear modulus Gr = 120 kPa and longitudinal speed of sound . The attenuation of electromagnetic, acoustic or elastic waves in certain frequency ranges known as band gaps numerically the propagation of elastic waves in a 2D bi-disperse granular crystal composed of large (and soft

Luding, Stefan

210

Numerical Calculation of Density of States and Band Structure A Thesis Submitted in Partial Satisfaction  

E-Print Network [OSTI]

combustion engines, with the majority of energy lost in terms of waste heat. In theory, the waste heat can. Therefore, all absorption of light happens near the band gap energy range. By changing the BS of a crystal result. 1. INTRODUCTION Energy consumption has become an important issue lately, with global shortage

Belanger, David P.

211

Microfabricated bulk wave acoustic bandgap device  

DOE Patents [OSTI]

A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

Olsson, Roy H.; El-Kady, Ihab F.; McCormick, Frederick; Fleming, James G.; Fleming leg, Carol

2010-06-08T23:59:59.000Z

212

Microfabricated bulk wave acoustic bandgap device  

DOE Patents [OSTI]

A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

Olsson, Roy H. (Albuquerque, NM); El-Kady, Ihab F. (Albuquerque, NM); McCormick, Frederick (Albuquerque, NM); Fleming, James G. (Albuquerque, NM); Fleming, legal representative, Carol (Albuquerque, NM)

2010-11-23T23:59:59.000Z

213

Elliptically polarizing adjustable phase insertion device  

DOE Patents [OSTI]

An insertion device for extracting polarized electromagnetic energy from a beam of particles is disclosed. The insertion device includes four linear arrays of magnets which are aligned with the particle beam. The magnetic field strength to which the particles are subjected is adjusted by altering the relative alignment of the arrays in a direction parallel to that of the particle beam. Both the energy and polarization of the extracted energy may be varied by moving the relevant arrays parallel to the beam direction. The present invention requires a substantially simpler and more economical superstructure than insertion devices in which the magnetic field strength is altered by changing the gap between arrays of magnets. 3 figures.

Carr, R.

1995-01-17T23:59:59.000Z

214

Narrow gap electronegative capacitive discharges  

SciTech Connect (OSTI)

Narrow gap electronegative (EN) capacitive discharges are widely used in industry and have unique features not found in conventional discharges. In this paper, plasma parameters are determined over a range of decreasing gap length L from values for which an electropositive (EP) edge exists (2-region case) to smaller L-values for which the EN region connects directly to the sheath (1-region case). Parametric studies are performed at applied voltage V{sub rf}=500 V for pressures of 10, 25, 50, and 100 mTorr, and additionally at 50 mTorr for 1000 and 2000 V. Numerical results are given for a parallel plate oxygen discharge using a planar 1D3v (1 spatial dimension, 3 velocity components) particle-in-cell (PIC) code. New interesting phenomena are found for the case in which an EP edge does not exist. This 1-region case has not previously been investigated in detail, either numerically or analytically. In particular, attachment in the sheaths is important, and the central electron density n{sub e0} is depressed below the density n{sub esh} at the sheath edge. The sheath oscillations also extend into the EN core, creating an edge region lying within the sheath and not characterized by the standard diffusion in an EN plasma. An analytical model is developed using minimal inputs from the PIC results, and compared to the PIC results for a base case at V{sub rf}=500 V and 50 mTorr, showing good agreement. Selected comparisons are made at the other voltages and pressures. A self-consistent model is also developed and compared to the PIC results, giving reasonable agreement.

Kawamura, E.; Lieberman, M. A.; Lichtenberg, A. J. [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)] [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)

2013-10-15T23:59:59.000Z

215

The effect of spin-orbit coupling in band structure of few-layer graphene  

SciTech Connect (OSTI)

Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducting states on their edge or surface. This can be happened due to spin-orbit coupling and time-reversal symmetry. Moreover, the edge current flows through their edge or surface depends on its spin orientation and also it is robust against non-magnetic impurities. Therefore, topological insulators are predicted to be useful ranging from spintronics to quantum computation. Graphene was first predicted to be the precursor of topological insulator by Kane-Mele. They developed a Hamiltonian model to describe the gap opening in graphene. In this work, we investigate the band structure of few-layer graphene by using this model with analytical approach. The results of our calculations show that the gap opening occurs at K and K’ point, not only in single layer, but also in bilayer and trilayer graphene.

Sahdan, Muhammad Fauzi, E-mail: sahdan89@yahoo.co.id; Darma, Yudi, E-mail: sahdan89@yahoo.co.id [Department of Physics, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung 40132 (Indonesia)

2014-03-24T23:59:59.000Z

216

Gap between active and passive solar heating  

SciTech Connect (OSTI)

The gap between active and passive solar could hardly be wider. The reasons for this are discussed and advantages to narrowing the gap are analyzed. Ten years of experience in both active and passive systems are reviewed, including costs, frequent problems, performance prediction, performance modeling, monitoring, and cooling concerns. Trends are analyzed, both for solar space heating and for service water heating. A tendency for the active and passive technologies to be converging is observed. Several recommendations for narrowing the gap are presented.

Balcomb, J.D.

1985-01-01T23:59:59.000Z

217

Chiral gap effect in curved space  

E-Print Network [OSTI]

We discuss a new type of QCD phenomenon induced in curved space. In the QCD vacuum a mass gap of Dirac fermions is attributed to the spontaneous breaking of chiral symmetry. If the curvature is positive large, the chiral condensate melts but a chiral invariant mass gap can still remain, which we name the chiral gap effect in curved space. This leads to decoupling of quark deconfinement which implies a view of black holes surrounded by a first-order QCD phase transition.

Antonino Flachi; Kenji Fukushima

2014-06-25T23:59:59.000Z

218

Control of ionization processes in high band gap materials via tailored  

E-Print Network [OSTI]

on Ultrafast Electron Dynamics in Femtosecond Optical Breakdown of Dielectrics," Phys. Rev. Lett. 83, 5182­5182

Kassel, Universität

219

Strain-tunable Photonic Band Gap Microcavity Waveguides in Silicon at 1.55 m  

E-Print Network [OSTI]

+ , Sang-Gook Kim+ * Columbia University, New York, NY 10027 + Massachusetts Institute of Technology for reconfiguration of the optical characteristics based on user-demand, but also for compensation against external the Optical Response of Photonic Bandgap Structures, edited by Philippe M. Fauchet, Paul V. Braun, Proceedings

220

SPECTROSCOPIE DE DEFAUTS -LUMINESCENCE I. THE ANALYSIS OF WIDE BAND GAP SEMICONDUCTORS  

E-Print Network [OSTI]

'impuretes donneurs, accepteurs et pieges isoelectroniques,et de leur extension a I'identification d'espkces chimiques of impurity, donors, acceptors and isoelectronic traps, and their extension to the identification of chemical junctions with quite heavy doping to provide the desired high bulk conduc- tivity, certainly in the 10'' cm

Boyer, Edmond

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
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221

Tunable band gap in graphene with a noncentrosymmetric superlattice potential Rakesh P. Tiwari and D. Stroud  

E-Print Network [OSTI]

and a hexagonal Brillouin zone BZ . The Fermi-energy EF of homogeneous, neutral graphene lies at the so A number of workers have investigated the possibility of building graphene electronic circuits without of the low-energy charge carriers is anisotropically renormalized,11 while a corrugated graphene sheet

Stroud, David

222

E-Print Network 3.0 - accurate band gaps Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Technological University Collection: Physics 7 Improving the efficiency of bulk heterojunction solar cells Summary: the amount of photons absorbed by the film by decreasing the...

223

Bispyridinium-phenylene-based copolymers: low band gap n-type alternating copolymers  

E-Print Network [OSTI]

Bispyridinium-phenylene-based conjugated donor–acceptor copolymers were synthesized by a Stille cross-coupling and cyclization sequence. These polyelectrolytes are freely soluble in organic solvents and display broad optical ...

Swager, Timothy Manning

224

Final Report: Laser-Material Interactions Relevant to Analytic Spectroscopy of Wide Band Gap Materials  

SciTech Connect (OSTI)

We summarize our studies aimed at developing an understanding of the underlying physics and chemistry in terms of laser materials interactions relevant to laser-based sampling and chemical analysis of wide bandgap materials. This work focused on the determination of mechanisms for the emission of electrons, ions, atoms, and molecules from laser irradiation of surfaces. We determined the important role of defects on these emissions, the thermal, chemical, and physical interactions responsible for matrix effects and mass-dependent transport/detection. This work supported development of new techniques and technology for the determination of trace elements contained such as nuclear waste materials.

Dickinson, J. T. [Washington State University] [Washington State University

2014-04-05T23:59:59.000Z

225

Detection of DNA Hybridization Using the Near-Infrared Band-Gap  

E-Print Network [OSTI]

shift of 2 meV, with a detection sensitivity of 6 nM. The energy shift is modeled by correlating in the solution- based systems, is advantageous due to the sensitivity and selectivity of the technique.14 absorption of blood and tissue17-19 and the low auto- fluorescence of cells20 in the nIR. Furthermore, SWNTs

Allen, Jont

226

Photonic band gap airbridge microcavity resonances in GaAs/AlxOy waveguides  

E-Print Network [OSTI]

-dielectric-contrast GaAs/AlxOy III­V compound semiconductor structure. The photonic crystal is defined by a regularly of optical states will be modified and quantized by such a cavity. Typical semiconductor optical cavities measurements of a one- dimensional PBG air-bridge optical microcavity are pre- sented here. A schematic

Fan, Shanhui

227

Engineering the electromagnetic vacuum for controlling light with light in a photonic-band-gap microchip  

E-Print Network [OSTI]

laser beams ( 1 W steady-state holding power and 5 nW switching power) through mutual coherent resonant broadened collection of "atoms" situated adjacent to the waveguide channel. The "inverted" atomic system can the PBG, light cannot propagate, leading to some fundamentally new opti- cal phenomena

John, Sajeev

228

Alternative Wide-Band-Gap Materials for Gamma-Ray Spectroscopy  

E-Print Network [OSTI]

Engineering and Radiological Sciences) in The University of Michigan 2013 Doctoral Committee: Professor Zhong emotionally, physically, spiritually, and intellectually through every moment of my graduate school career, the Orion group would not be successful without the great work of his graduate students. It has been a truly

He, Zhong

229

A New Gap-Opening Mechanism in a Triple-Band Metal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLasDelivered‰PNGExperience hands-onASTROPHYSICSHe β-Research andAFishing forAAEIA'sNewAA

230

A New Gap-Opening Mechanism in a Triple-Band Metal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLasDelivered‰PNGExperience hands-onASTROPHYSICSHe β-Research andAFishing forAAEIA'sNewAAA

231

A New Gap-Opening Mechanism in a Triple-Band Metal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLasDelivered‰PNGExperience hands-onASTROPHYSICSHe β-Research andAFishing forAAEIA'sNewAAAA

232

A New Gap-Opening Mechanism in a Triple-Band Metal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLasDelivered‰PNGExperience hands-onASTROPHYSICSHe β-Research andAFishing forAAEIA'sNewAAAAA

233

A New Gap-Opening Mechanism in a Triple-Band Metal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLasDelivered‰PNGExperience hands-onASTROPHYSICSHe β-Research andAFishing

234

Second harmonic generation from direct band gap quantum dots pumped by femtosecond laser pulses  

SciTech Connect (OSTI)

We report on nonlinear optical experiments performed on Cu{sub 2}S quantum dots (QDs) pumped by femtosecond laser pulses. We conduct a theoretical simulation and experiments to determine their second harmonic generation characteristics. Furthermore, we demonstrate that the QDs have a second harmonic generation conversion efficiency of up to 76%. Our studies suggest that these Cu{sub 2}S QDs can be used for solar cells, bioimaging, biosensing, and electric detection.

Liu, Liwei, E-mail: liulw@cust.edu.cn; Wang, Yue; Hu, Siyi; Ren, Yu; Huang, Chen [School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022, People's Republic of China and International Joint Research Center for Nanophotonics and Biophotonics, Changchun University of Science and Technology, Changchun, Jilin 130022 (China)

2014-02-21T23:59:59.000Z

235

PHYSICAL REVIEW B 90, 115209 (2014) Computational search for direct band gap silicon crystals  

E-Print Network [OSTI]

abundance, silicon is the preferred solar-cell material despite the fact that current silicon materials have semiconductor. For this reason, the most widely used solar-cell materials are all silicon based [1]. Current

Lee, Jooyoung

236

Tuning laser-induced band gaps in graphene Hernn L. Calvo,1,2  

E-Print Network [OSTI]

Statistischen Physik, RWTH Aachen University, D-52056 Aachen, Germany 3 CIN2 (ICN­CSIC), Catalan Institute-infrared laser technology in a transport setup, thereby opening prom- ising prospects for graphene to the Dirac points K and K . Since we consider a clean sample and given that the ac field does not introduce

237

Broadband optical coupling between microstructured fibers and photonic band gap circuits: Two-dimensional paradigms  

E-Print Network [OSTI]

simple two-dimensional design models. We demonstrate an effective large- bandwidth small-footprint beam platform for integrated optics. Unlike conventional paradigms such as silicon on insulator SOI waveguides that guide light on a chip by total internal reflection index guiding , PBG-based microcircuits can guide

John, Sajeev

238

Tunable micro-cavities in photonic band-gap yarns and optical fibers  

E-Print Network [OSTI]

The vision behind this work is the fabrication of high performance innovative fiber-based optical components over kilometer length-scales. The optical properties of these fibers derive from their multilayer dielectric ...

Benoit, Gilles, Ph. D. Massachusetts Institute of Technology

2006-01-01T23:59:59.000Z

239

Excitation, Ionization, and Desorption: How Sub-band gap Photons Modify the  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing ZirconiaPolicy and Assistance100 tonusingdeposition. | EMSLStructure of

240

A New Gap-Opening Mechanism in a Triple-Band Metal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert SouthwestTechnologies |November 2011A First Look

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Band-Gap Engineering of Carbon Nanotubes with Grain Boundaries. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to someone6 M. Babzien, I. Ben-Zvi, P. Study ofJ U LYOffsets at

242

Band-Gap Reduction and Dopant Interaction in Epitaxial La,Cr Co-doped  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to someone6 M. Babzien, I. Ben-Zvi, P. Study ofJ U LYOffsets atSrTiO3 Thin

243

Undecidability of the Spectral Gap (short version)  

E-Print Network [OSTI]

The spectral gap -- the difference in energy between the ground state and the first excited state -- is one of the most important properties of a quantum many-body system. Quantum phase transitions occur when the spectral gap vanishes and the system becomes critical. Much of physics is concerned with understanding the phase diagrams of quantum systems, and some of the most challenging and long-standing open problems in theoretical physics concern the spectral gap, such as the Haldane conjecture that the Heisenberg chain is gapped for integer spin, proving existence of a gapped topological spin liquid phase, or the Yang-Mills gap conjecture (one of the Millennium Prize problems). These problems are all particular cases of the general spectral gap problem: Given a quantum many-body Hamiltonian, is the system it describes gapped or gapless? Here we show that this problem is undecidable, in the same sense as the Halting Problem was proven to be undecidable by Turing. A consequence of this is that the spectral gap...

Cubitt, Toby; Wolf, Michael M

2015-01-01T23:59:59.000Z

244

Undecidability of the Spectral Gap (short version)  

E-Print Network [OSTI]

The spectral gap -- the difference in energy between the ground state and the first excited state -- is one of the most important properties of a quantum many-body system. Quantum phase transitions occur when the spectral gap vanishes and the system becomes critical. Much of physics is concerned with understanding the phase diagrams of quantum systems, and some of the most challenging and long-standing open problems in theoretical physics concern the spectral gap, such as the Haldane conjecture that the Heisenberg chain is gapped for integer spin, proving existence of a gapped topological spin liquid phase, or the Yang-Mills gap conjecture (one of the Millennium Prize problems). These problems are all particular cases of the general spectral gap problem: Given a quantum many-body Hamiltonian, is the system it describes gapped or gapless? Here we show that this problem is undecidable, in the same sense as the Halting Problem was proven to be undecidable by Turing. A consequence of this is that the spectral gap of certain quantum many-body Hamiltonians is not determined by the axioms of mathematics, much as Goedels incompleteness theorem implies that certain theorems are mathematically unprovable. We extend these results to prove undecidability of other low temperature properties, such as correlation functions. The proof hinges on simple quantum many-body models that exhibit highly unusual physics in the thermodynamic limit.

Toby Cubitt; David Perez-Garcia; Michael M. Wolf

2015-02-13T23:59:59.000Z

245

FAQS Gap Analysis Qualification Card – Criticality Safety  

Broader source: Energy.gov [DOE]

Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

246

FAQS Gap Analysis Qualification Card – Radiation Protection  

Broader source: Energy.gov [DOE]

Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

247

FAQS Gap Analysis Qualification Card – Environmental Restoration  

Broader source: Energy.gov [DOE]

Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

248

FAQS Gap Analysis Qualification Card – Construction Management  

Broader source: Energy.gov [DOE]

Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

249

FAQS Gap Analysis Qualification Card – Mechanical Systems  

Broader source: Energy.gov [DOE]

Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

250

Dilute Group III-V nitride intermediate band solar cells with contact blocking layers  

DOE Patents [OSTI]

An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

Walukiewicz, Wladyslaw (Kensington, CA); Yu, Kin Man (Lafayette, CA)

2012-07-31T23:59:59.000Z

251

Getting simultaneous red and near-infrared band data from a single digital camera for plant monitoring applications: theoretical and practical study  

E-Print Network [OSTI]

Getting simultaneous red and near-infrared band data from a single digital camera for plant Abstract. Multispectral images, including red and near-infrared bands, have proved efficient for vegetation imaging devices. A methodology is proposed to obtain simultaneously the near-infrared and red bands from

Boyer, Edmond

252

Tetracene air-gap single-crystal field-effect transistors Yu Xia, Vivek Kalihari, and C. Daniel Frisbiea  

E-Print Network [OSTI]

Tetracene air-gap single-crystal field-effect transistors Yu Xia, Vivek Kalihari, and C. Daniel FETs utilizing an air or vacuum gap as the gate dielectric. The linear mobility of the device can be as high as 1.6 cm2 /V s in air, with a subthreshold slope lower than 0.5 V nF/decade cm2 . By changing

Rogers, John A.

253

Robotic end gripper with a band member to engage object  

DOE Patents [OSTI]

An end effector for use with robotic arms and like devices is described that utilizes a flexible band to draw an object against an anvil having a concave surface. One typical convex surface is created by a V-block, with an apex of the V being centrally located. If an object to be grasped is fragile, the contour of the concave surface closely matches the surface of the object. Typically the movement of the band is effected by a linear actuator, with the anvil remaining fixed relative to a support base. Several embodiments are described that utilize variations in drawing the band toward the anvil, with one of these embodiments described in detail in the form of a fabricated unit. One embodiment includes a cover element that can be moved over an object after the grasping thereof, with this cover potentially serving various functions. Movement of the cover can be effected with a second linear actuator. 8 figures.

Pollard, R.E.; Robinson, S.C.; Thompson, W.F.; Couture, S.A.; Sutton, B.J.

1994-05-10T23:59:59.000Z

254

Robotic end gripper with a band member to engage object  

DOE Patents [OSTI]

An end effector for use with robotic arms and like devices that utilizes a flexible band to draw an object against an anvil having a concave surface. One typical convex surface is created by a V-block, with an apex of the V being centrally located. If an object to be grasped is fragile, the contour of the concave surface closely matches the surface of the object. Typically the movement of the band is effected by a linear actuator, with the anvil remaining fixed relative to a support base. Several embodiments are described that utilize variations in drawing the band toward the anvil, with one of these embodiments described in detail in the form of a fabricated unit. One embodiment includes a cover element that can be moved over an object after the grasping thereof, with this cover potentially serving various functions. Movement of the cover can be effected with a second linear actuator.

Pollard, Roy E. (Maryville, TN); Robinson, Samuel C. (Knoxville, TN); Thompson, William F. (Oak Ridge, TN); Couture, Scott A. (Knoxville, TN); Sutton, Bill J. (Powell, TN)

1994-01-01T23:59:59.000Z

255

Gap Assessment (FY 13 Update)  

SciTech Connect (OSTI)

To help guide its future data collection efforts, The DOE GTO funded a data gap analysis in FY2012 to identify high potential hydrothermal areas where critical data are needed. This analysis was updated in FY2013 and the resulting datasets are represented by this metadata. The original process was published in FY 2012 and is available here: https://pangea.stanford.edu/ERE/db/GeoConf/papers/SGW/2013/Esposito.pdf Though there are many types of data that can be used for hydrothermal exploration, five types of exploration data were targeted for this analysis. These data types were selected for their regional reconnaissance potential, and include many of the primary exploration techniques currently used by the geothermal industry. The data types include: 1. well data 2. geologic maps 3. fault maps 4. geochemistry data 5. geophysical data To determine data coverage, metadata for exploration data (including data type, data status, and coverage information) were collected and catalogued from nodes on the National Geothermal Data System (NGDS). It is the intention of this analysis that the data be updated from this source in a semi-automated fashion as new datasets are added to the NGDS nodes. In addition to this upload, an online tool was developed to allow all geothermal data providers to access this assessment and to directly add metadata themselves and view the results of the analysis via maps of data coverage in Geothermal Prospector (http://maps.nrel.gov/gt_prospector). A grid of the contiguous U.S. was created with 88,000 10-km by 10-km grid cells, and each cell was populated with the status of data availability corresponding to the five data types. Using these five data coverage maps and the USGS Resource Potential Map, sites were identified for future data collection efforts. These sites signify both that the USGS has indicated high favorability of occurrence of geothermal resources and that data gaps exist. The uploaded data are contained in two data files for each data category. The first file contains the grid and is in the SHP file format (shape file.) Each populated grid cell represents a 10k area within which data is known to exist. The second file is a CSV (comma separated value) file that contains all of the individual layers that intersected with the grid. This CSV can be joined with the map to retrieve a list of datasets that are available at any given site. The attributes in the CSV include: 1. grid_id : The id of the grid cell that the data intersects with 2. title: This represents the name of the WFS service that intersected with this grid cell 3. abstract: This represents the description of the WFS service that intersected with this grid cell 4. gap_type: This represents the category of data availability that these data fall within. As the current processing is pulling data from NGDS, this category universally represents data that are available in the NGDS and are ready for acquisition for analytic purposes. 5. proprietary_type: Whether the data are considered proprietary 6. service_type: The type of service 7. base_url: The service URL

Getman, Dan

2013-09-30T23:59:59.000Z

256

The refractive index and electronic gap of water and ice increase with increasing pressure  

E-Print Network [OSTI]

Determining the electronic and dielectric properties of water at high pressure and temperature is an essential prerequisite to understand the physical and chemical properties of aqueous environments under supercritical conditions, e.g. in the Earth interior. However optical measurements of compressed ice and water remain challenging and it has been common practice to assume that their band gap is inversely correlated to the measured refractive index, consistent with observations reported for hundreds of materials. Here we report ab initio molecular dynamics and electronic structure calculations showing that both the refractive index and the electronic gap of water and ice increase with pressure, at least up to 30 GPa. Subtle electronic effects, related to the nature of interband transitions and band edge localization under pressure, are responsible for this apparently anomalous behavior.

Pan, Ding; Galli, Giulia

2014-01-01T23:59:59.000Z

257

Bipolar thermoelectric devices  

E-Print Network [OSTI]

The work presented here is a theoretical and experimental study of heat production and transport in bipolar electrical devices, with detailed treatment of thermoelectric effects. Both homojunction and heterojunction devices ...

Pipe, Kevin P. (Kevin Patrick), 1976-

2004-01-01T23:59:59.000Z

258

Drop short control of electrode gap  

DOE Patents [OSTI]

During vacuum consumable arc remelting the electrode gap between a consumable electrode and a pool of molten metal is difficult to control. The present invention monitors drop shorts by detecting a decrease in the voltage between the consumable electrode and molten pool. The drop shorts and their associated voltage reductions occur as repetitive pulses which are closely correlated to the electrode gap. Thus, the method and apparatus of the present invention controls electrode gap based upon drop shorts detected from the monitored anode-cathode voltage. The number of drop shorts are accumulated, and each time the number of drop shorts reach a predetermined number, the average period between drop shorts is calculated from this predetermined number and the time in which this number is accumulated. This average drop short period is used in a drop short period electrode gap model which determines the actual electrode gap from the drop short. The actual electrode gap is then compared with a desired electrode gap which is selected to produce optimum operating conditions and the velocity of the consumable error is varied based upon the gap error. The consumable electrode is driven according to any prior art system at this velocity. In the preferred embodiment, a microprocessor system is utilized to perform the necessary calculations and further to monitor the duration of each drop short. If any drop short exceeds a preset duration period, the consumable electrode is rapidly retracted a predetermined distance to prevent bonding of the consumable electrode to the molten remelt.

Fisher, Robert W. (Albuquerque, NM); Maroone, James P. (Albuquerque, NM); Tipping, Donald W. (Albuquerque, NM); Zanner, Frank J. (Sandia Park, NM)

1986-01-01T23:59:59.000Z

259

Pulse flux measuring device  

DOE Patents [OSTI]

A device for measuring particle flux comprises first and second photodiode detectors for receiving flux from a source and first and second outputs for producing first and second signals representing the flux incident to the detectors. The device is capable of reducing the first output signal by a portion of the second output signal, thereby enhancing the accuracy of the device. Devices in accordance with the invention may measure distinct components of flux from a single source or fluxes from several sources.

Riggan, William C. (Albuquerque, NM)

1985-01-01T23:59:59.000Z

260

Pulse detecting device  

DOE Patents [OSTI]

A device for measuring particle flux comprises first and second photodiode detectors for receiving flux from a source and first and second outputs for producing first and second signals representing the flux incident to the detectors. The device is capable of reducing the first output signal by a portion of the second output signal, thereby enhancing the accuracy of the device. Devices in accordance with the invention may measure distinct components of flux from a single source or fluxes from several sources.

Riggan, W.C.

1984-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Articulating feedstock delivery device  

DOE Patents [OSTI]

A fully articulable feedstock delivery device that is designed to operate at pressure and temperature extremes. The device incorporates an articulating ball assembly which allows for more accurate delivery of the feedstock to a target location. The device is suitable for a variety of applications including, but not limited to, delivery of feedstock to a high-pressure reaction chamber or process zone.

Jordan, Kevin

2013-11-05T23:59:59.000Z

262

Organic photosensitive devices  

DOE Patents [OSTI]

The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photosensitive optoelectronic devices having a photoactive organic region containing encapsulated nanoparticles that exhibit plasmon resonances. An enhancement of the incident optical field is achieved via surface plasmon polariton resonances. This enhancement increases the absorption of incident light, leading to a more efficient device.

Rand, Barry P; Forrest, Stephen R

2013-11-26T23:59:59.000Z

263

Amorphous silicon photovoltaic devices  

DOE Patents [OSTI]

This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

2004-08-31T23:59:59.000Z

264

INFORMATION DEVICES AND  

E-Print Network [OSTI]

to access or hold sensitive, confidential or personal information on mobile devices, such as laptopsPROTECTION OF INFORMATION HELD ON MOBILE DEVICES AND ENCRYPTION POLICY (V3.5) the place of useful;Protection of Information Held on Mobile Devices and Encryption Policy (v3.5) Page 1 Table of Contents 1

Mottram, Nigel

265

Portable data collection device  

DOE Patents [OSTI]

The present invention provides a portable data collection device that has a variety of sensors that are interchangeable with a variety of input ports in the device. The various sensors include a data identification feature that provides information to the device regarding the type of physical data produced by each sensor and therefore the type of sensor itself. The data identification feature enables the device to locate the input port where the sensor is connected and self adjust when a sensor is removed or replaced. The device is able to collect physical data, whether or not a function of a time.

French, Patrick D. (Aurora, CO)

1996-01-01T23:59:59.000Z

266

Unitary lens semiconductor device  

DOE Patents [OSTI]

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Lear, Kevin L. (Albuquerque, NM)

1997-01-01T23:59:59.000Z

267

Portable data collection device  

DOE Patents [OSTI]

The present invention provides a portable data collection device that has a variety of sensors that are interchangeable with a variety of input ports in the device. The various sensors include a data identification feature that provides information to the device regarding the type of physical data produced by each sensor and therefore the type of sensor itself. The data identification feature enables the device to locate the input port where the sensor is connected and self adjust when a sensor is removed or replaced. The device is able to collect physical data, whether or not a function of a time. 7 figs.

French, P.D.

1996-06-11T23:59:59.000Z

268

PHOTONICS and DEVICE MICROFABRICATION  

E-Print Network [OSTI]

in the University. Our key objective is to bridge the gap between academic research and industrial application that are in demand in the semiconductor and optoelectronics industries and other high- technology manufacturing

Mottram, Nigel

269

E-Print Network 3.0 - atmospheric rf device Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

rf device Page: << < 1 2 3 4 5 > >> 1 Packaging of Ka-Band Patch Antenna and Optoelectronic Components for Dual-Mode Indoor Wireless Communication Summary: that the coupling...

270

Engine piston having an insulating air gap  

DOE Patents [OSTI]

A piston for an internal combustion engine has an upper crown with a top and a bottom surface, and a lower crown with a top and a bottom surface. The upper crown and the lower crown are fixedly attached to each other using welds, with the bottom surface of the upper crown and the top surface of the lower crown forming a mating surface. The piston also has at least one centrally located air gap formed on the mating surface. The air gap is sealed to prevent substantial airflow into or out of the air gap.

Jarrett, Mark Wayne (Washington, IL); Hunold,Brent Michael (Apex, NC)

2010-02-02T23:59:59.000Z

271

L-asparagine crystals with wide gap semiconductor features: Optical absorption measurements and density functional theory computations  

SciTech Connect (OSTI)

Results of optical absorption measurements are presented together with calculated structural, electronic, and optical properties for the anhydrous monoclinic L-asparagine crystal. Density functional theory (DFT) within the generalized gradient approximation (GGA) including dispersion effects (TS, Grimme) was employed to perform the calculations. The optical absorption measurements revealed that the anhydrous monoclinic L-asparagine crystal is a wide band gap material with 4.95 eV main gap energy. DFT-GGA+TS simulations, on the other hand, produced structural parameters in very good agreement with X-ray data. The lattice parameter differences ?a, ?b, ?c between theory and experiment were as small as 0.020, 0.051, and 0.022 Å, respectively. The calculated band gap energy is smaller than the experimental data by about 15%, with a 4.23 eV indirect band gap corresponding to Z???? and Z???? transitions. Three other indirect band gaps of 4.30 eV, 4.32 eV, and 4.36 eV are assigned to ?3 ???, ?1 ???, and ?2 ??? transitions, respectively. ?-sol computations, on the other hand, predict a main band gap of 5.00 eV, just 50 meV above the experimental value. Electronic wavefunctions mainly originating from O 2p–carboxyl, C 2p–side chain, and C 2p–carboxyl orbitals contribute most significantly to the highest valence and lowest conduction energy bands, respectively. By varying the lattice parameters from their converged equilibrium values, we show that the unit cell is less stiff along the b direction than for the a and c directions. Effective mass calculations suggest that hole transport behavior is more anisotropic than electron transport, but the mass values allow for some charge mobility except along a direction perpendicular to the molecular layers of L-asparagine which form the crystal, so anhydrous monoclinic L-asparagine crystals could behave as wide gap semiconductors. Finally, the calculations point to a high degree of optical anisotropy for the absorption and complex dielectric function, with more structured curves for incident light polarized along the 100 and 101 directions.

Zanatta, G.; Gottfried, C. [Departamento de Bioquímica, Universidade Federal do Rio Grande do Sul, 90035-003 Porto Alegre-RS (Brazil)] [Departamento de Bioquímica, Universidade Federal do Rio Grande do Sul, 90035-003 Porto Alegre-RS (Brazil); Silva, A. M. [Universidade Estadual do Piauí, 64260-000 Piripiri-Pi (Brazil)] [Universidade Estadual do Piauí, 64260-000 Piripiri-Pi (Brazil); Caetano, E. W. S., E-mail: ewcaetano@gmail.com [Instituto de Educação, Ciência e Tecnologia do Ceará, 60040-531 Fortaleza-CE (Brazil)] [Instituto de Educação, Ciência e Tecnologia do Ceará, 60040-531 Fortaleza-CE (Brazil); Sales, F. A. M.; Freire, V. N. [Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, 60455-760 Fortaleza-CE (Brazil)] [Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, 60455-760 Fortaleza-CE (Brazil)

2014-03-28T23:59:59.000Z

272

Mobile Device Guide Apple iPhone Devices  

E-Print Network [OSTI]

Mobile Device Guide ­ Apple iPhone Devices CSUF Date Last Revised: 1/20/11 Page 1 of 3 ConnectingPhone desktop. 1a. Expand `Mail, Contacts, Calendars' as shown. #12;Mobile Device Guide ­ Apple iPhone Devices (case sensitive). 4. Tap `next'. #12;Mobile Device Guide ­ Apple iPhone Devices CSUF Date Last Revised

de Lijser, Peter

273

Organic electronic devices using phthalimide compounds  

DOE Patents [OSTI]

Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

Hassan, Azad M.; Thompson, Mark E.

2012-10-23T23:59:59.000Z

274

Organic electronic devices using phthalimide compounds  

DOE Patents [OSTI]

Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

Hassan, Azad M.; Thompson, Mark E.

2010-09-07T23:59:59.000Z

275

Are We Closing the School Discipline Gap?  

E-Print Network [OSTI]

D.J. , (Ed). Closing the School Discipline Gap: EquitableBooth, E.A. (2011). Breaking schools’ rules: A statewidestudy of how school discipline relates to students’ success

Losen, Daniel; Hodson, Cheri; Keith II, Michael A; Morrison, Katrina; Belway, Shakti

2015-01-01T23:59:59.000Z

276

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy  

SciTech Connect (OSTI)

Dilute nitride GaNAsP thin films were grown via a GaAsP metamorphic buffer on GaP(100) substrate with gas-source molecular beam epitaxy. The compositions of this III-V-V-V compound were determined by channeling Rutherford backscattering spectroscopy and nuclear reaction analysis. Photoreflectance shows two distinctive transitions from the valence band to the split conduction bands due to N incorporation. Photoluminescence and optical absorption show the fundamental bandgap of Ga(N)AsP is largely tailored by the small amount of N. The observed multiband characteristics and the bandgap tunability of GaNAsP are two merits that fit into the intermediate-band solar cell roadmap, and GaNAsP of high crystal quality provides a strong candidate for intermediate band solar cell materials.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Yu, K. M.; Walukiewicz, W. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)] [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kudrawiec, R. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland); Luce, A. V. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Ting, M. [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)] [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2013-03-18T23:59:59.000Z

277

On the K{sup {pi}} = 0{sup +} rotational bands in the {sup 178}Hf nucleus  

SciTech Connect (OSTI)

The results obtained by studying the angular distributions of gamma rays with respect to the neutron-beam axis in the reaction {sup 178}Hf(n, n'{gamma}) involving the deexcitation of the K{sup {pi}} = 0{sup +} rotational bands of {sup 178}Hf are presented.New information about themultipole-mixing parameter {delta} in gamma transitions from the levels of these bands is obtained. The K{sup {pi}} = 0{sub 4}{sup +} band is constructed anew. The relationship between the parameter {delta} for the (2{sup +}0{sub n}-2{sup +}0{sub 1}) gamma transition and the energy gap {Delta}{sub n} = E{sub lev}(2{sup +}0{sub n}) - E{sub lev}(0{sup +}0{sub n}), on one hand, and the quasiparticle structure of the rotational band, on the other hand, is discussed for {sup 178}Hf on the basis of the quasiparticle-phonon model.

Govor, L. I.; Demidov, A. M.; Kurkin, V. A., E-mail: kurkin@polyn.kiae.su; Mikhailov, I. V. [Russian Research Centre Kurchatov Institute (Russian Federation)

2010-07-15T23:59:59.000Z

278

Columbia River Component Data Gap Analysis  

SciTech Connect (OSTI)

This Data Gap Analysis report documents the results of a study conducted by Washington Closure Hanford (WCH) to compile and reivew the currently available surface water and sediment data for the Columbia River near and downstream of the Hanford Site. This Data Gap Analysis study was conducted to review the adequacy of the existing surface water and sediment data set from the Columbia River, with specific reference to the use of the data in future site characterization and screening level risk assessments.

L. C. Hulstrom

2007-10-23T23:59:59.000Z

279

Beam dumping system and abort gap  

E-Print Network [OSTI]

The performance of the beam dumping systems and the abort gap cleaning are reviewed in the context of the general machine protection system. Details of the commissioning experience and setting up, encountered equipment problems, the experience with and status of the eXternal Post Operational Checks (XPOC) and the importance of operational procedures are presented for the beam dumping system. The brief experience with the abort gap cleaning is also presented.

Uythoven, J

2010-01-01T23:59:59.000Z

280

Barrier breaching device  

DOE Patents [OSTI]

A barrier breaching device that is designed primarily for opening holes in interior walls of buildings uses detonating fuse for explosive force. The fuse acts as the ribs or spokes of an umbrella-like device that may be opened up to form a cone. The cone is placed against the wall so that detonating fuse that rings the base of the device and which is ignited by the spoke-like fuses serves to cut a circular hole in the wall.

Honodel, Charles A. (Tracy, CA)

1985-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Barrier breaching device  

DOE Patents [OSTI]

A barrier breaching device that is designed primarily for opening holes in interior walls of buildings uses detonating fuse for explosive force. The fuse acts as the ribs or spokes of an umbrella-like device that may be opened up to form a cone. The cone is placed against the wall so that detonating fuse that rings the base of the device and which is ignited by the spoke-like fuses serves to cut a circular hole in the wall.

Honodel, C.A.

1983-06-01T23:59:59.000Z

282

NWChem: Bridging the Gap Between Experimental and Computational...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

NWChem: Bridging the Gap Between Experimental and Computational Chemistry NWChem: Bridging the Gap Between Experimental and Computational Chemistry Intel recently interviewed...

283

antiparticle spectrometer gaps: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Next Page Last Page Topic Index 1 The General Antiparticle Spectrometer (GAPS) - Hunt for dark matter using low-energy antideuterons CERN Preprints Summary: The GAPS experiment is...

284

Bridging the Gap between Fundamental Physics and Chemistry and...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Bridging the Gap between Fundamental Physics and Chemistry and Applied Models for HCCI Engines Bridging the Gap between Fundamental Physics and Chemistry and Applied Models for...

285

Mobile Device Management Android Device Enrollment  

E-Print Network [OSTI]

to manage your device. c. Enter your password. #12;d. Accept the Terms and Conditions e. You have completed. 2. Get Touchdown from Google Play a. Open up the Google Play Store. b. Search for Touchdown. c. Use the application. #12;3. Get Citrix Mobile Connect from Google Play a. Open up the Google Play Store. b. Search

286

Grey man devices  

E-Print Network [OSTI]

The Vision Slaved to Walking Device i s one in a series of devices that are a result of the experimental ambulation series. The ability to see only when one's feet are moving allows for a distorted perspective of ones own ...

Sethi, Sanjit (Sanjit Singh), 1971-

2002-01-01T23:59:59.000Z

287

Capillary interconnect device  

DOE Patents [OSTI]

An interconnecting device for connecting a plurality of first fluid-bearing conduits to a corresponding plurality of second fluid-bearing conduits thereby providing fluid communication between the first fluid-bearing conduits and the second fluid-bearing conduits. The device includes a manifold and one or two ferrule plates that are held by compressive axial forces.

Renzi, Ronald F

2013-11-19T23:59:59.000Z

288

Self-actuated device  

DOE Patents [OSTI]

A self-actuated device, of particular use as a valve or an orifice for nuclear reactor fuel and blanket assemblies, in which a gas produced by a neutron induced nuclear reaction gradually accumulates as a function of neutron fluence. The gas pressure increase occasioned by such accumulation of gas is used to actuate the device.

Hecht, Samuel L. (Richland, WA)

1984-01-01T23:59:59.000Z

289

Fluidic nanotubes and devices  

DOE Patents [OSTI]

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Yang, Peidong (El Cerrito, CA); He, Rongrui (El Cerrito, CA); Goldberger, Joshua (Berkeley, CA); Fan, Rong (El Cerrito, CA); Wu, Yiying (Albany, CA); Li, Deyu (Albany, CA); Majumdar, Arun (Orinda, CA)

2010-01-10T23:59:59.000Z

290

Fluidic nanotubes and devices  

DOE Patents [OSTI]

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Yang, Peidong (Berkeley, CA); He, Rongrui (El Cerrito, CA); Goldberger, Joshua (Berkeley, CA); Fan, Rong (El Cerrito, CA); Wu, Yiying (Albany, CA); Li, Deyu (Albany, CA); Majumdar, Arun (Orinda, CA)

2008-04-08T23:59:59.000Z

291

Device for cutting protrusions  

DOE Patents [OSTI]

An apparatus for clipping a protrusion of material is provided. The protrusion may, for example, be a bolt head, a nut, a rivet, a weld bead, or a temporary assembly alignment tab protruding from a substrate surface of assembled components. The apparatus typically includes a cleaver having a cleaving edge and a cutting blade having a cutting edge. Generally, a mounting structure configured to confine the cleaver and the cutting blade and permit a range of relative movement between the cleaving edge and the cutting edge is provided. Also typically included is a power device coupled to the cutting blade. The power device is configured to move the cutting edge toward the cleaving edge. In some embodiments the power device is activated by a momentary switch. A retraction device is also generally provided, where the retraction device is configured to move the cutting edge away from the cleaving edge.

Bzorgi, Fariborz M. (Knoxville, TN)

2011-07-05T23:59:59.000Z

292

Energy band modulation of graphane by hydrogen-vacancy chains: A first-principles study  

SciTech Connect (OSTI)

We investigated a variety of configurations of hydrogen-vacancy chains in graphane by first-principles density functional calculation. We found that graphane with two zigzag H-vacancy chains segregated by one or more H chain is generally a nonmagnetic conductor or has a negligible band gap. However, the same structure is turned into a semiconductor and generates a magnetic moment if either one or both of the vacancy chains are blocked by isolated H atoms. If H-vacancy chains are continuously distributed, the structure is similar to a zigzag graphene nanoribbon embedded in graphane. It was also found that the embedded zigzag graphene nanoribbon is antiferromagnetic, and isolated H atoms left in the 2-chain nanoribbon can tune the band gap and generate net magnetic moments. Similar effects are also obtained if bare carbon atoms are present outside the nanoribbon. These results are useful for designing graphene-based nanoelectronic circuits.

Wu, Bi-Ru [Department of Natural science, Center for General Education, Chang Gung University, Kueishan 333, Taiwan, ROC (China); Yang, Chih-Kai, E-mail: ckyang@nccu.edu.tw [Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan, ROC (China)

2014-08-15T23:59:59.000Z

293

Magnetism and interaction-induced gap opening in graphene with vacancies or hydrogen adatoms: Quantum Monte Carlo study  

E-Print Network [OSTI]

We study electronic properties of graphene with finite concentration of vacancies or other resonant scatterers by a straightforward lattice Quantum Monte Carlo calculations. Taking into account realistic long-range Coulomb interaction we calculate distribution of spin density associated to midgap states and demonstrate antiferromagnetic ordering. Energy gap are open due to the interaction effects, both in the bare graphene spectrum and in the vacancy/impurity bands. In the case of 5 % concentration of resonant scatterers the latter gap is estimated as 0.7 eV and 1.1 eV for graphene on boron nitride and freely suspended graphene, respectively.

M. V. Ulybyshev; M. I. Katsnelson

2015-02-04T23:59:59.000Z

294

Magnetism and interaction-induced gap opening in graphene with vacancies or hydrogen adatoms: Quantum Monte Carlo study  

E-Print Network [OSTI]

We study electronic properties of graphene with finite concentration of vacancies or other resonant scatterers by a straightforward lattice Quantum Monte Carlo calculations. Taking into account realistic long-range Coulomb interaction we calculate distribution of spin density associated to midgap states and demonstrate antiferromagnetic ordering. Energy gap are open due to the interaction effects, both in the bare graphene spectrum and in the vacancy/impurity bands. In the case of 5 % concentration of resonant scatterers the latter gap is estimated as 0.7 eV and 1.1 eV for graphene on boron nitride and freely suspended graphene, respectively.

Ulybyshev, M V

2015-01-01T23:59:59.000Z

295

Wafer Fusion for Integration of Semiconductor Materials and Devices  

SciTech Connect (OSTI)

We have developed a wafer fusion technology to achieve integration of semiconductor materials and heterostructures with widely disparate lattice parameters, electronic properties, and/or optical properties for novel devices not now possible on any one substrate. Using our simple fusion process which uses low temperature (400-600 C) anneals in inert N{sub 2} gas, we have extended the scope of this technology to examine hybrid integration of dissimilar device technologies. As a specific example, we demonstrate wafer bonding vertical cavity surface emitting lasers (VCSELs) to transparent AlGaAs and GaP substrates to fabricate bottom-emitting short wavelength VCSELs. As a baseline fabrication technology applicable to many semiconductor systems, wafer fusion will revolutionize the way we think about possible semiconductor devices, and enable novel device configurations not possible by epitaxial growth.

Choquette, K.D.; Geib, K.M.; Hou, H.Q.; Allerman, A.A.; Kravitz, S.; Follstaedt, D.M.; Hindi, J.J.

1999-05-01T23:59:59.000Z

296

Method and device for tensile testing of cable bundles  

DOE Patents [OSTI]

A standard tensile test device is improved to accurately measure the mechanical properties of stranded cables, ropes, and other composite structures wherein a witness is attached to the top and bottom mounting blocks holding the cable under test. The witness is comprised of two parts: a top and a bottom rod of similar diameter with the bottom rod having a smaller diameter stem on its upper end and the top rod having a hollow opening in its lower end into which the stem fits forming a witness joint. A small gap is present between the top rod and the larger diameter portion of the bottom rod. A standard extensometer is attached to the top and bottom rods of the witness spanning this small witness gap. When a force is applied to separate the mounting blocks, the gap in the witness expands the same length that the entire test specimen is stretched.

Robertson, Lawrence M; Ardelean, Emil V; Goodding, James C; Babuska, Vit

2012-10-16T23:59:59.000Z

297

Heterojunction band offsets and dipole formation at BaTiO{sub 3}/SrTiO{sub 3} interfaces  

SciTech Connect (OSTI)

We used a complement of photoemission and cathodoluminescence techniques to measure formation of the BaTiO{sub 3} (BTO) on SrTiO{sub 3} (STO) heterojunction band offset grown monolayer by monolayer by molecular beam epitaxy. X-ray photoemission spectroscopy (XPS) provided core level and valence band edge energies to monitor the valence band offset in-situ as the first few crystalline BTO monolayers formed on the STO substrate. Ultraviolet photoemission spectroscopy (UPS) measured Fermi level positions within the band gap, work functions, and ionization potentials of the growing BTO film. Depth-resolved cathodoluminescence spectroscopy measured energies and densities of interface states at the buried heterojunction. Kraut-based XPS heterojunction band offsets provided evidence for STO/BTO heterojunction linearity, i.e., commutativity and transitivity. In contrast, UPS and XPS revealed a large dipole associated either with local charge transfer or strain-induced polarization within the BTO epilayer.

Balaz, Snjezana [Department of Physics and Astronomy, Youngstown State University, One University Plaza, Youngstown, Ohio 44555 (United States)] [Department of Physics and Astronomy, Youngstown State University, One University Plaza, Youngstown, Ohio 44555 (United States); Zeng, Zhaoquan [Department of Electrical and Computer Engineering, The Ohio State University, 205 Dreese Lab, 2015 Neil Ave., Columbus, Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, The Ohio State University, 205 Dreese Lab, 2015 Neil Ave., Columbus, Ohio 43210 (United States); Brillson, Leonard J. [Department of Electrical and Computer Engineering, The Ohio State University, 205 Dreese Lab, 2015 Neil Ave., Columbus, Ohio 43210 (United States) [Department of Electrical and Computer Engineering, The Ohio State University, 205 Dreese Lab, 2015 Neil Ave., Columbus, Ohio 43210 (United States); Department of Physics, The Ohio State University, 191 West Woodruff, Columbus, Ohio 43210 (United States)

2013-11-14T23:59:59.000Z

298

A University of Alabama Axial-Gap Electric Motor Developmenty  

E-Print Network [OSTI]

CAVT A University of Alabama Axial-Gap Electric Motor Developmenty Research Center OBJECTIVE ­ Develop axial gap permanent-magnet electric Axial motor ­ Develop axial gap permanent-magnet electric motor topologies with high torque and power densities MOTIVATION ­ Axial-gap ("pancake") motors have

Carver, Jeffrey C.

299

Oscillation of Fourier Integrals with a spectral gap  

E-Print Network [OSTI]

May 30, 2003 ... In engineering literature, functions with a spectral gap are called high- .... High-

1910-30-71T23:59:59.000Z

300

Energy harvesting devices for harvesting energy from terahertz electromagnetic radiation  

DOE Patents [OSTI]

Methods, devices and systems for harvesting energy from electromagnetic radiation are provided including harvesting energy from electromagnetic radiation. In one embodiment, a device includes a substrate and one or more resonance elements disposed in or on the substrate. The resonance elements are configured to have a resonant frequency, for example, in at least one of the infrared, near-infrared and visible light spectra. A layer of conductive material may be disposed over a portion of the substrate to form a ground plane. An optical resonance gap or stand-off layer may be formed between the resonance elements and the ground plane. The optical resonance gap extends a distance between the resonance elements and the layer of conductive material approximately one-quarter wavelength of a wavelength of the at least one resonance element's resonant frequency. At least one energy transfer element may be associated with the at least one resonance element.

Novack, Steven D.; Kotter, Dale K.; Pinhero, Patrick J.

2012-10-09T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Rain sampling device  

DOE Patents [OSTI]

The present invention constitutes a rain sampling device adapted for independent operation at locations remote from the user which allows rainfall to be sampled in accordance with any schedule desired by the user. The rain sampling device includes a mechanism for directing wet precipitation into a chamber, a chamber for temporarily holding the precipitation during the process of collection, a valve mechanism for controllably releasing samples of the precipitation from the chamber, a means for distributing the samples released from the holding chamber into vessels adapted for permanently retaining these samples, and an electrical mechanism for regulating the operation of the device. 11 figures.

Nelson, D.A.; Tomich, S.D.; Glover, D.W.; Allen, E.V.; Hales, J.M.; Dana, M.T.

1991-05-14T23:59:59.000Z

302

Rain sampling device  

DOE Patents [OSTI]

The present invention constitutes a rain sampling device adapted for independent operation at locations remote from the user which allows rainfall to be sampled in accordance with any schedule desired by the user. The rain sampling device includes a mechanism for directing wet precipitation into a chamber, a chamber for temporarily holding the precipitation during the process of collection, a valve mechanism for controllably releasing samples of said precipitation from said chamber, a means for distributing the samples released from the holding chamber into vessels adapted for permanently retaining these samples, and an electrical mechanism for regulating the operation of the device.

Nelson, Danny A. (Richland, WA); Tomich, Stanley D. (Richland, WA); Glover, Donald W. (Prosser, WA); Allen, Errol V. (Benton City, WA); Hales, Jeremy M. (Kennewick, WA); Dana, Marshall T. (Richland, WA)

1991-01-01T23:59:59.000Z

303

Ideal light concentrators with reflector gaps  

SciTech Connect (OSTI)

A cylindrical or trough-like radiant energy concentration and collection device is provided. The device includes an energy absorber, a glazing enveloping the absorber and a reflective wall. The ideal contour of the reflective wall is determined with reference to a virtual absorber and not the actual absorber cross section.

Winston, R.

1980-10-28T23:59:59.000Z

304

Ideal light concentrators with reflector gaps  

SciTech Connect (OSTI)

A cylindrical or trough-like radiant energy concentration and collection device is provided. The device includes an energy absorber, a glazing enveloping the absorber and a reflective wall. The ideal contour of the reflective wall is determined with reference to a virtual absorber and not the actual absorber cross section.

Winston, Roland (Chicago, IL)

1980-01-01T23:59:59.000Z

305

Natural Gas Engine Development Gaps (Presentation)  

SciTech Connect (OSTI)

A review of current natural gas vehicle offerings is presented for both light-duty and medium- and heavy-duty applications. Recent gaps in the marketplace are discussed, along with how they have been or may be addressed. The stakeholder input process for guiding research and development needs via the Natural Gas Vehicle Technology Forum (NGVTF) to the U.S. Department of Energy and the California Energy Commission is reviewed. Current high-level natural gas engine development gap areas are highlighted, including efficiency, emissions, and the certification process.

Zigler, B.T.

2014-03-01T23:59:59.000Z

306

Homolumo gap from dynamical energy levels  

SciTech Connect (OSTI)

We introduce a dynamical matrix model where the matrix is interpreted as a Hamiltonian representing interaction of a bosonic system with a single fermion. We show how a system of second-quantized fermions influences the ground state of the whole system by producing a gap between the highest eigenvalue of the occupied single-fermion states and the lowest eigenvalue of the unoccupied single-fermion states. We describe the development of the gap in both the strong and weak coupling regimes, while for the intermediate coupling strength we expect formation of homolumo kinks.

Andric, I.; Jonke, L.; Jurman, D.; Nielsen, H. B. [Theoretical Physics Division, Rudjer Boskovic Institute, P.O. Box 180, 10002 Zagreb (Croatia); Niels Bohr Institute, Copenhagen DK 2100 (Denmark)

2009-11-15T23:59:59.000Z

307

E-Print Network 3.0 - all-solid pbg fiber Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Introduction THE photonic band gap (PBG... to applica- tion of PBG concepts to optoelectronic devices. In many devices, spontaneous emission plays... an impor- tant role in...

308

Wireless device monitoring systems and monitoring devices, and associated methods  

DOE Patents [OSTI]

Wireless device monitoring systems and monitoring devices include a communications module for receiving wireless communications of a wireless device. Processing circuitry is coupled with the communications module and configured to process the wireless communications to determine whether the wireless device is authorized or unauthorized to be present at the monitored area based on identification information of the wireless device. Methods of monitoring for the presence and identity of wireless devices are also provided.

McCown, Steven H; Derr, Kurt W; Rohde, Kenneth W

2014-05-27T23:59:59.000Z

309

Red Band Needle Blight TERMS OF REFERENCE  

E-Print Network [OSTI]

Red Band Needle Blight TERMS OF REFERENCE Purpose 1. The Programme Board has been formed to have an overview of the administration and science of Red Band Needle Blight (RBNB), to underpin decisions made

310

Intermediate-band material based on GaAs quantum rings for solar cells  

SciTech Connect (OSTI)

The intermediate-band concept is invoked to explain the photoresponse spectra obtained for unbiased devices fabricated from GaAs quantum rings grown by a droplet epitaxy technique on lattice-matched Al{sub 0.3}Ga{sub 0.7}As barriers. The photoresponse spectra where measured at room temperature in the visible-near-infrared spectral range. The presence of the intermediate band in the device active region is confirmed by measuring the mid-infrared photoresponse, which is attributed to the intersubband transitions in the conduction band. The photocurrent was measured at room temperature and found to be about four orders of magnitude larger than the dark current in the voltage range of {+-} 4.0 V.

Wu Jiang; Shao Dali [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Li Zhenhua; Kunets, Vasyl P.; Wang Zhiming; Salamo, G. J. [Institute of Nanoscale Materials Science and Engineering, Fayetteville, Arkansas 72701 (United States); Manasreh, M. O. [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Institute of Nanoscale Materials Science and Engineering, Fayetteville, Arkansas 72701 (United States)

2009-08-17T23:59:59.000Z

311

Multimaterial rectifying device fibers  

E-Print Network [OSTI]

Electronic and optoelectronic device processing is commonly thought to be incompatible with much simpler thermal drawing techniques used in optical fiber production. The incorporation of metals, polymer insulators, and ...

Orf, Nicholas D

2009-01-01T23:59:59.000Z

312

Electronic security device  

DOE Patents [OSTI]

The present invention relates to a security device having a control box containing an electronic system and a communications loop over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system and a detection module capable of registering changes in the voltage and phase of the signal transmitted over the loop. 11 figs.

Eschbach, E.A.; LeBlanc, E.J.; Griffin, J.W.

1992-03-17T23:59:59.000Z

313

FINAL REPORT ON GDE GAP CELL  

SciTech Connect (OSTI)

A project has been undertaken to develop an electrochemical cell and support equipment for evaluation of a gas diffusion electrode-based, narrow-electrolyte-gap anode for SO{sub 2} oxidation in the hydrogen production cycle of the hybrid sulfur (HyS) process. The project supported the HyS development program at the Savannah River National Lab (SRNL). The benefits of using a gas diffusion electrode in conjunction with the narrow anolyte gap are being determined through electrochemical polarization testing under a variety conditions, and by comparison to results produced by SRNL and others using anode technologies that have no anolyte gap. These test results indicate that the NGA cell has low resistance suitable for use in the HyS electrolyzer, exhibits good efficiency at high current densities compared to the direct feed HyS electrolyzer, and indicates robust performance in extended testing over 65 hours. Seepage episodes were mostly caused by port clogging, which can be mitigated in future designs through minor modifications to the hardware. Significant reductions in sulfur crossover have not yet been demonstrated in the NGA configuration compared to in-house direct feed testing, but corroborative sulfur layer analysis is as yet incomplete. Further testing in a single-pass anolyte configuration is recommended for complete evaluation of steady-state electrochemical efficiency and SO{sub 2} crossover in the narrow gap configuration.

Herman, D.; Summers, W.; Danko, E.

2009-09-28T23:59:59.000Z

314

Gapped spin Hamiltonian motivated by quantum teleportation  

E-Print Network [OSTI]

We construct a Hamiltonian whose ground state encodes a time-independent emulation of quan- tum teleportation. We calculate properties of the Hamiltonian, using exact diagonalization and a mean-field theory, and argue that it has a gap. The system exhibits an illuminating relationship to the well-known AKLT (Affleck, Lieb, Kennedy and Tasaki) model.

Ari Mizel

2014-10-07T23:59:59.000Z

315

Red Band Needle Blight Programme Red Band Needle Blight of Pine Programme Group  

E-Print Network [OSTI]

Red Band Needle Blight Programme Group Red Band Needle Blight of Pine Programme Group Minutes Support Welcome and introduction 1. Jim thanked everyone for attending the first meeting of the Red Band and that the private 1 | Paper 1 - Minutes | Debbie Erskine | 23/01/2009 #12;Red Band Needle Blight Programme Group

316

Confirmation of intrinsic electron gap states at nonpolar GaN(1-100) surfaces combining photoelectron and surface optical spectroscopy  

SciTech Connect (OSTI)

The electronic structure of GaN(1–100) surfaces is investigated in-situ by photoelectron spectroscopy (PES) and reflection anisotropy spectroscopy (RAS). Occupied surface states 3.1?eV below the Fermi energy are observed by PES, accompanied by surface optical transitions found in RAS around 3.3?eV, i.e., below the bulk band gap. These results indicate that the GaN(1–100) surface band gap is smaller than the bulk one due to the existence of intra-gap states, in agreement with density functional theory calculations. Furthermore, the experiments demonstrate that RAS can be applied for optical surface studies of anisotropic crystals.

Himmerlich, M., E-mail: marcel.himmerlich@tu-ilmenau.de; Eisenhardt, A.; Shokhovets, S.; Krischok, S. [Institut für Physik and Institut für Mikro- und Nanotechnologien, TU Ilmenau, PF 100565, 98684 Ilmenau (Germany); Räthel, J.; Speiser, E.; Neumann, M. D.; Navarro-Quezada, A.; Esser, N. [Leibniz-Institut für Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Strasse 9, 12489 Berlin (Germany)

2014-04-28T23:59:59.000Z

317

Results of the GAP-4 experiment on molten-fuel drainage through intersubassembly gap geometry. [LMFBR  

SciTech Connect (OSTI)

One of the key issues in assessment of the meltout phase of a hypothetical core disruptive accident in the LMFBR system involves the timing and paths for dispersal of molten fuel from the disrupted core. A program of experiments is underway at Argonne National Laboratory to investigate molten fuel penetration through these postulated escape paths. The purpose of the GAP-4 test was to examine the penetration distances of molten fuel flowing through the flat, narrow channels representing the intersubassembly gap geometry. In the experiment design, the gap geometry was selected to be two-dimensional on the basis that the gap volume in a reactor design would be interconnected and continuous. The molten fuel used in these tests was a mixture of UO/sub 2/ (81%) and molybdenum (19%) which was generated by an exothermic thermite reaction at a temperature of approx. 3470 K.

Spencer, B.W.; Vetter, D.; Wesel, R.; Sienicki, J.J.

1983-01-01T23:59:59.000Z

318

RESOLVING THE GAP AND AU-SCALE ASYMMETRIES IN THE PRE-TRANSITIONAL DISK OF V1247 ORIONIS  

SciTech Connect (OSTI)

Pre-transitional disks are protoplanetary disks with a gapped disk structure, potentially indicating the presence of young planets in these systems. In order to explore the structure of these objects and their gap-opening mechanism, we observed the pre-transitional disk V1247 Orionis using the Very Large Telescope Interferometer, the Keck Interferometer, Keck-II, Gemini South, and IRTF. This allows us to spatially resolve the AU-scale disk structure from near- to mid-infrared wavelengths (1.5-13 {mu}m), tracing material at different temperatures and over a wide range of stellocentric radii. Our observations reveal a narrow, optically thick inner-disk component (located at 0.18 AU from the star) that is separated from the optically thick outer disk (radii {approx}> 46 AU), providing unambiguous evidence for the existence of a gap in this pre-transitional disk. Surprisingly, we find that the gap region is filled with significant amounts of optically thin material with a carbon-dominated dust mineralogy. The presence of this optically thin gap material cannot be deduced solely from the spectral energy distribution, yet it is the dominant contributor at mid-infrared wavelengths. Furthermore, using Keck/NIRC2 aperture masking observations in the H, K', and L' bands, we detect asymmetries in the brightness distribution on scales of {approx}15-40 AU, i.e., within the gap region. The detected asymmetries are highly significant, yet their amplitude and direction changes with wavelength, which is not consistent with a companion interpretation but indicates an inhomogeneous distribution of the gap material. We interpret this as strong evidence for the presence of complex density structures, possibly reflecting the dynamical interaction of the disk material with sub-stellar mass bodies that are responsible for the gap clearing.

Kraus, Stefan; Espaillat, Catherine; Wilner, David J. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, MS-78, Cambridge, MA 02138 (United States); Ireland, Michael J. [Department of Physics and Astronomy, Macquarie University, Sydney, NSW 2109 (Australia); Sitko, Michael L.; Swearingen, Jeremy R.; Werren, Chelsea [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Monnier, John D.; Calvet, Nuria [Department of Astronomy, University of Michigan, 918 Dennison Building, Ann Arbor, MI 48109 (United States); Grady, Carol A. [Eureka Scientific Inc., Oakland, CA 94602 (United States); Harries, Tim J. [School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL (United Kingdom); Hoenig, Sebastian F. [Department of Physics, University of California Santa Barbara, Broida Hall, Santa Barbara, CA 93106 (United States); Russell, Ray W. [The Aerospace Corporation, Los Angeles, CA 90009 (United States)

2013-05-01T23:59:59.000Z

319

Electrical apparatus lockout device  

SciTech Connect (OSTI)

A simple lockout device for electrical equipment equipped with recessed power blades is described. The device comprises a face-plate (12) having a threaded member (14) attached thereto and apertures suitable for accommodating the power blades of a piece of electrical equipment, an elastomeric nose (16) abutting the face-plate having a hole for passage of the threaded member therethrough and power blade apertures in registration with those of the face-plate, a block (20) having a recess (34) in its forward face for receiving at least a portion of the hose, a hole therein for receiving the threaded member and an integral extension (26) extending from its rear face. A thumb screw (22) suitable for turning with the hands and having internal threads suitable for engaging the threaded member attached to the face-plate is inserted into a passage in the integral extension to engage the threaded member in such a fashion that when the device is inserted over the recessed power blades of a piece of electrical equipment and the thumb screw (22) tightened, the elastomeric nose (16) is compressed between the face-plate (12) and the block (20) forcing it to expand laterally thereby securing the device in the recess and precluding the accidental or intentional energization of the piece of equipment by attachment of a power cord to the recessed power blades. Means are provided in the interval extension and the thumb screw for the attachment of a locking device (46) which will satisfy OSHA standards.

Gonzales, R.

1999-10-12T23:59:59.000Z

320

Electrical apparatus lockout device  

DOE Patents [OSTI]

A simple lockout device for electrical equipment equipped with recessed power blades is described. The device comprises a face-plate (12) having a threaded member (14) attached thereto and apertures suitable for accommodating the power blades of a piece of electrical equipment, an elastomeric nose (16) abutting the face-plate having a hole for passage of the threaded member therethrough and power blade apertures in registration with those of the face-plate, a block (20) having a recess (34) in its forward face for receiving at least a portion of the hose, a hole therein for receiving the threaded member and an integral extension (26) extending from its rear face. A thumb screw (22) suitable for turning with the hands and having internal threads suitable for engaging the threaded member attached to the face-plate is inserted into a passage in the integral extension to engage the threaded member in such a fashion that when the device is inserted over the recessed power blades of a piece of electrical equipment and the thumb screw (22) tightened, the elastomeric nose (16) is compressed between the face-plate (12) and the block (20) forcing it to expand laterally thereby securing the device in the recess and precluding the accidental or intentional energization of the piece of equipment by attachment of a power cord to the recessed power blades. Means are provided in the interval extension and the thumb screw for the attachment of a locking device (46) which will satisfy OSHA standards.

Gonzales, Rick (Chesapeake, VA)

1999-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Spectral tailoring device  

DOE Patents [OSTI]

A spectral tailoring device for altering the neutron energy spectra and flux of neutrons in a fast reactor thereby selectively to enhance or inhibit the transmutation rate of a target metrical to form a product isotope. Neutron moderators, neutron filters, neutron absorbers and neutron reflectors may be used as spectral tailoring devices. Depending on the intended use for the device, a member from each of these four classes of materials could be used singularly, or in combination, to provide a preferred neutron energy spectra and flux of the neutrons in the region of the target material. In one embodiment of the invention, an assembly is provided for enhancing the production of isotopes, such as cobalt 60 and gadolinium 153. In another embodiment of the invention, a spectral tailoring device is disposed adjacent a target material which comprises long lived or volatile fission products and the device is used to shift the neutron energy spectra and flux of neutrons in the region of the fission products to preferentially transmute them to produce a less volatile fission product inventory. 6 figs.

Brager, H.R.; Schenter, R.E.; Carter, L.L.; Karnesky, R.A.

1987-08-05T23:59:59.000Z

322

Comparison of GAP-3 and GAP-4 experiments with conduction freezing calculations. [LMFBR  

SciTech Connect (OSTI)

Experiments GAP-3 and GAP-4 were performed at ANL to investigate the ability of molten fuel to penetrate downward through the narrow channels separating adjacent subassemblies during an LMFBR hypothetical core disruptive accident. Molten fuel-metal mixtures (81% UO/sub 2/, 19% Mo) at an initial temperature of 3470/sup 0/K generated by a thermite reaction were injected downward into 1 m long rectangular test sections (gap thickness = 0.43 cm, channel width = 20.3 cm) initially at 1170/sup 0/K simulating the nominal Clinch River Breeder Reactor intersubassembly gap. In the GAP-3 test, a prolonged reaction time of approx. 15 s resulted in segregation of the metallic Mo and oxidic UO/sub 2/ constituents within the reaction vessel prior to injection. Consequently, Mo entered the test section first and froze, forming a complete plug at a penetration distance of 0.18 m. In GAP-4, the reaction time was reduced to approx. 3 s and the constituents remained well mixed upon injection with the result that the leading edge penetration distance increased to 0.35 m. Posttest examination of the cut-open test sections has revealed the existence of stable insulating crusts upon the underlying steel walls with melting and ablation of the walls only very localized.

Sienicki, J.J.; Spencer, B.W.

1983-01-01T23:59:59.000Z

323

Biochip scanner device  

DOE Patents [OSTI]

A biochip scanner device used to detect and acquire fluorescence signal data from biological microchips or biochips and method of use are provided. The biochip scanner device includes a laser for emitting a laser beam. A modulator, such as an optical chopper modulates the laser beam. A scanning head receives the modulated laser beam and a scanning mechanics coupled to the scanning head moves the scanning head relative to the biochip. An optical fiber delivers the modulated laser beam to the scanning head. The scanning head collects the fluorescence light from the biochip, launches it into the same optical fiber, which delivers the fluorescence into a photodetector, such as a photodiode. The biochip scanner device is used in a row scanning method to scan selected rows of the biochip with the laser beam size matching the size of the immobilization site.

Perov, Alexander (Troitsk, RU); Belgovskiy, Alexander I. (Mayfield Heights, OH); Mirzabekov, Andrei D. (Darien, IL)

2001-01-01T23:59:59.000Z

324

Fragment capture device  

DOE Patents [OSTI]

A fragment capture device for use in explosive containment. The device comprises an assembly of at least two rows of bars positioned to eliminate line-of-sight trajectories between the generation point of fragments and a surrounding containment vessel or asset. The device comprises an array of at least two rows of bars, wherein each row is staggered with respect to the adjacent row, and wherein a lateral dimension of each bar and a relative position of each bar in combination provides blockage of a straight-line passage of a solid fragment through the adjacent rows of bars, wherein a generation point of the solid fragment is located within a cavity at least partially enclosed by the array of bars.

Payne, Lloyd R. (Los Lunas, NM); Cole, David L. (Albuquerque, NM)

2010-03-30T23:59:59.000Z

325

Pendulum detector testing device  

DOE Patents [OSTI]

A detector testing device which provides consistent, cost-effective, repeatable results. The testing device is primarily constructed of PVC plastic and other non-metallic materials. Sensitivity of a walk-through detector system can be checked by: 1) providing a standard test object simulating the mass, size and material content of a weapon or other contraband, 2) suspending the test object in successive positions, such as head, waist and ankle levels, simulating where the contraband might be concealed on a person walking through the detector system; and 3) swinging the suspended object through each of the positions, while operating the detector system and observing its response. The test object is retained in a holder in which the orientation of the test device or target can be readily changed, to properly complete the testing requirements.

Gonsalves, John M. (Modesto, CA)

1997-01-01T23:59:59.000Z

326

Electrochromic optical switching device  

DOE Patents [OSTI]

An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source.

Lampert, Carl M. (El Sobrante, CA); Visco, Steven J. (Berkeley, CA)

1992-01-01T23:59:59.000Z

327

Pendulum detector testing device  

DOE Patents [OSTI]

A detector testing device is described which provides consistent, cost-effective, repeatable results. The testing device is primarily constructed of PVC plastic and other non-metallic materials. Sensitivity of a walk-through detector system can be checked by: (1) providing a standard test object simulating the mass, size and material content of a weapon or other contraband, (2) suspending the test object in successive positions, such as head, waist and ankle levels, simulating where the contraband might be concealed on a person walking through the detector system; and (3) swinging the suspended object through each of the positions, while operating the detector system and observing its response. The test object is retained in a holder in which the orientation of the test device or target can be readily changed, to properly complete the testing requirements. 5 figs.

Gonsalves, J.M.

1997-09-30T23:59:59.000Z

328

Nonaqueous Electrical Storage Device  

DOE Patents [OSTI]

An electrochemical capacitor is disclosed that features two, separated, high surface area carbon cloth electrodes sandwiched between two current collectors fabricated of a conductive polymer having a flow temperature greater than 130.degree. C., the perimeter of the electrochemical capacitor being sealed with a high temperature gasket to form a single cell device. The gasket material is a thermoplastic stable at temperatures greater than 100.degree. C., preferably a polyester or a polyurethane, and having a reflow temperature above 130.degree. C. but below the softening temperature of the current collector material. The capacitor packaging has good mechanical integrity over a wide temperature range, contributes little to the device equivalent series resistance (ESR), and is stable at high potentials. In addition, the packaging is designed to be easily manufacturable by assembly line methods. The individual cells can be stacked in parallel or series configuration to reach the desired device voltage and capacitance.

McEwen, Alan B. (Melrose, MA); Evans, David A. (Seekonk, MA); Blakley, Thomas J. (Woburn, MA); Goldman, Jay L. (Mansfield, MA)

1999-10-26T23:59:59.000Z

329

Ion manipulation device  

DOE Patents [OSTI]

An ion manipulation method and device is disclosed. The device includes a pair of substantially parallel surfaces. An array of inner electrodes is contained within, and extends substantially along the length of, each parallel surface. The device includes a first outer array of electrodes and a second outer array of electrodes. Each outer array of electrodes is positioned on either side of the inner electrodes, and is contained within and extends substantially along the length of each parallel surface. A DC voltage is applied to the first and second outer array of electrodes. A RF voltage, with a superimposed electric field, is applied to the inner electrodes by applying the DC voltages to each electrode. Ions either move between the parallel surfaces within an ion confinement area or along paths in the direction of the electric field, or can be trapped in the ion confinement area.

Anderson, Gordon A; Smith, Richard D; Ibrahim, Yehia M; Baker, Erin M

2014-09-16T23:59:59.000Z

330

Regenerative combustion device  

DOE Patents [OSTI]

A regenerative combustion device having a combustion zone, and chemicals contained within the combustion zone, such as water, having a first equilibrium state, and a second combustible state. Means for transforming the chemicals from the first equilibrium state to the second combustible state, such as electrodes, are disposed within the chemicals. An igniter, such as a spark plug or similar device, is disposed within the combustion zone for igniting combustion of the chemicals in the second combustible state. The combustion products are contained within the combustion zone, and the chemicals are selected such that the combustion products naturally chemically revert into the chemicals in the first equilibrium state following combustion. The combustion device may thus be repeatedly reused, requiring only a brief wait after each ignition to allow the regeneration of combustible gasses within the head space.

West, Phillip B.

2004-03-16T23:59:59.000Z

331

Electrochromic optical switching device  

DOE Patents [OSTI]

An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source. 3 figs.

Lampert, C.M.; Visco, S.J.

1992-08-25T23:59:59.000Z

332

Thickness-modulated optical dielectric constants and band alignments of HfO{sub x}N{sub y} gate dielectrics  

SciTech Connect (OSTI)

Thickness-modulated optical dielectric constants and band alignments of HfO{sub x}N{sub y} films grown by sputtering have been investigated by spectroscopic ellipsometry (SE) and x-ray photoelectron spectroscopy. Based on SE measurements, it has been noted that an increase in optical dielectric constant and band gap has been observed as a function of the film thickness. Analyses of thickness-dependent band alignment of the HfO{sub x}N{sub y}/Si system indicate that the valence band offset increases, but only slight change in the conduction band offset, resulting from the thickness-induced change in the structure. The suitable optical dielectric constants and band offsets relative to Si make sputtering-derived HfO{sub x}N{sub y} film a promising candidate for high-k gate dielectrics.

He, G.; Zhang, L. D.; Liu, M.; Zhang, J. P.; Wang, X. J. [Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Zhen, C. M. [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050016 (China)

2009-01-01T23:59:59.000Z

333

Precision alignment device  

DOE Patents [OSTI]

Apparatus for providing automatic alignment of beam devices having an associated structure for directing, collimating, focusing, reflecting, or otherwise modifying the main beam. A reference laser is attached to the structure enclosing the main beam producing apparatus and produces a reference beam substantially parallel to the main beam. Detector modules containing optical switching devices and optical detectors are positioned in the path of the reference beam and are effective to produce an electrical output indicative of the alignment of the main beam. This electrical output drives servomotor operated adjustment screws to adjust the position of elements of the structure associated with the main beam to maintain alignment of the main beam. 5 figs.

Jones, N.E.

1988-03-10T23:59:59.000Z

334

Phononic crystal devices  

DOE Patents [OSTI]

Phononic crystals that have the ability to modify and control the thermal black body phonon distribution and the phonon component of heat transport in a solid. In particular, the thermal conductivity and heat capacity can be modified by altering the phonon density of states in a phononic crystal. The present invention is directed to phononic crystal devices and materials such as radio frequency (RF) tags powered from ambient heat, dielectrics with extremely low thermal conductivity, thermoelectric materials with a higher ratio of electrical-to-thermal conductivity, materials with phononically engineered heat capacity, phononic crystal waveguides that enable accelerated cooling, and a variety of low temperature application devices.

El-Kady, Ihab F. (Albuquerque, NM); Olsson, Roy H. (Albuquerque, NM)

2012-01-10T23:59:59.000Z

335

On fixed-gap adiabatic quantum computation  

E-Print Network [OSTI]

Quantum computation has revolutionary potential for speeding algorithms and for simulating quantum systems such as molecules. We report here a quantum computer design that performs universal quantum computation within a single non-degenerate ground state protected from decohering noise by an energy gap that we argue is system-size-independent. Closely analogous to a traditional electric circuit, it substantially changes the requirements for quantum computer construction, easing measurement, timing, and heating problems. Using the standard adiabatic condition, we present evidence that this design permits "quantum concurrent processing" distributing a quantum computation among extra qubits to perform a quantum algorithm of N gates in an amount of time that scales with the square root of N. One consequence of our work is a fixed gap version of adiabatic quantum computation, which several arguments hinted could be impossible.

Ari Mizel

2014-01-21T23:59:59.000Z

336

Chemical potential and the gap equation  

E-Print Network [OSTI]

In general the kernel of QCD's gap equation possesses a domain of analyticity upon which the equation's solution at nonzero chemical potential is simply obtained from the in-vacuum result through analytic continuation. On this domain the single-quark number- and scalar-density distribution functions are mu-independent. This is illustrated via two models for the gap equation's kernel. The models are alike in concentrating support in the infrared. They differ in the form of the vertex but qualitatively the results are largely insensitive to the Ansatz. In vacuum both models realise chiral symmetry in the Nambu-Goldstone mode and in the chiral limit, with increasing chemical potential, exhibit a first-order chiral symmetry restoring transition at mu~M(0), where M(p^2) is the dressed-quark mass function. There is evidence to suggest that any associated deconfinement transition is coincident and also of first-order.

Huan Chen; Wei Yuan; Lei Chang; Yu-Xin Liu; Thomas Klahn; Craig D. Roberts

2008-07-17T23:59:59.000Z

337

SHEEP MOUNTAIN URANIUM PROJECT CROOKS GAP, WYOMING  

E-Print Network [OSTI]

;PROJECT OVERVIEW ·Site Location·Site Location ·Fremont , Wyoming ·Existing Uranium Mine Permit 381C·Existing Uranium Mine Permit 381C ·Historical Operation ·Western Nuclear Crooks Gap Project ·Mined 1956 ­ 1988 and Open Pit Mining ·Current Mine Permit (381C) ·Updating POO, Reclamation Plan & Bond ·Uranium Recovery

338

To Bridge LEDs' Green Gap, Scientists Think Small  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

To Bridge LEDs' Green Gap, Scientists Think Small To Bridge LEDs' Green Gap, Scientists Think Small Nanostructures Half a DNA Strand-Wide Show Promise for Efficient LEDs April 4,...

339

Vehicle Codes and Standards: Overview and Gap Analysis  

SciTech Connect (OSTI)

This report identifies gaps in vehicle codes and standards and recommends ways to fill the gaps, focusing on six alternative fuels: biodiesel, natural gas, electricity, ethanol, hydrogen, and propane.

Blake, C.; Buttner, W.; Rivkin, C.

2010-02-01T23:59:59.000Z

340

Bridging the Efficiency Gap: Commercial Packaged Rooftop Air Conditioners  

E-Print Network [OSTI]

Bridging the Efficiency Gap: Commercial Packaged Rooftop Air Conditioners John Shugars, Consultant ofcommercialpackaged air conditioners, explore the reasons behindthis efficiency gap, and assess opportunities). Although sales of rooftop air conditioners have steadily increased over the past decade, the efficiency

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Solar Innovator | Alta Devices  

ScienceCinema (OSTI)

Selected to participate in the Energy Department's SunShot Initiative, Alta Devices produces solar cells that convert sunlight into electricity at world record-breaking levels of efficiency. Through its innovative solar technology Alta is helping bring down the cost of solar. Learn more about the Energy Department's efforts to advance solar technology at energy.gov/solar .

Mattos, Laila; Le, Minh

2013-05-29T23:59:59.000Z

342

Device Oriented Project Controller  

SciTech Connect (OSTI)

This proposal is directed at the issue of developing control systems for very large HEP projects. A de-facto standard in accelerator control is the Experimental Physics and Industrial Control System (EPICS), which has been applied successfully to many physics projects. EPICS is a channel based system that requires that each channel of each device be configured and controlled. In Phase I, the feasibility of a device oriented extension to the distributed channel database was demonstrated by prototyping a device aware version of an EPICS I/O controller that functions with the current version of the channel access communication protocol. Extensions have been made to the grammar to define the database. Only a multi-stage position controller with limit switches was developed in the demonstration, but the grammar should support a full range of functional record types. In phase II, a full set of record types will be developed to support all existing record types, a set of process control functions for closed loop control, and support for experimental beam line control. A tool to configure these records will be developed. A communication protocol will be developed or extensions will be made to Channel Access to support introspection of components of a device. Performance bench marks will be made on both communication protocol and the database. After these records and performance tests are under way, a second of the grammar will be undertaken.

Dalesio, Leo; Kraimer, Martin

2013-11-20T23:59:59.000Z

343

X-BAND KLYSTRON DEVELOPMENT AT SLAC  

SciTech Connect (OSTI)

The development of X-band klystrons at SLAC originated with the idea of building an X-band Linear Collider in the late 1980's. Since then much effort has been expended in developing a reliable X-band Power source capable of delivering >50 MW RF power in pulse widths >1.5 {micro}s. I will report on some of the technical issues and design strategies which have led to the current SLAC klystron designs.

Vlieks, Arnold E.; /SLAC

2009-08-03T23:59:59.000Z

344

Possible chiral bands in {sup 194}Tl  

SciTech Connect (OSTI)

High spin states in {sup 194}Tl, excited through the {sup 181}Ta({sup 18}O,5n) fusion evaporation reaction, were studied using the AFRODITE array at iThemba LABS. Candidate chiral bands built on the {pi}h{sub 9/2} x {nu}i{sub 13/2}{sup 1} configuration were found. Furthermore these bands were observed through a band crossing caused by the excitation of a {nu}i{sub 13/2} pair. Above the band crossing the excitation energies remain close, suggesting that chirality may persist for the four quasiparticle configuration too.

Masiteng, P. L.; Ramashidzha, T. M.; Maliage, S. M.; Sharpey-Schafer, J. F.; Vymers, P. A. [iThemba LABS, P.O Box 722, 7129 (South Africa); University of the Western Cape, Private Bag X17, 7535 Bellville (South Africa); Lawrie, E. A.; Lawrie, J. J.; Bark, R. A.; Mullins, S. M.; Murray, S. H. T. [iThemba LABS, P.O Box 722, 7129 (South Africa); Kau, J.; Komati, F. [iThemba LABS, P.O Box 722, 7129 (South Africa); University of the North West, Private Bag X2046, 2735 Mafikeng (South Africa); Lindsay, R. [University of the Western Cape, Private Bag X17, 7535 Bellville (South Africa); Matamba, I. [University of Venda for Science and Technology, Thohoyandou (South Africa); Mutshena, P. [iThemba LABS, P.O Box 722, 7129 (South Africa); University of Venda for Science and Technology, Thohoyandou (South Africa); Zhang, Y. [iThemba LABS, P.O Box 722, 7129 (South Africa); University of Cape Town, Private Bag, 7701 Rondebosch (South Africa)

2011-10-28T23:59:59.000Z

345

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof  

DOE Patents [OSTI]

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2013-11-26T23:59:59.000Z

346

CURRENT STATUS OF INSERTION DEVICE DEVELOPMENT AT THE NSLS-II AND ITS FUTURE PLANS  

SciTech Connect (OSTI)

National Synchrotron Light Source-II (NSLS-II) project is currently under construction. Procurement of various insertion devices (IDs) has begun. This ring assumes a very high beam stability requirement which imposes tighter field specifications on insertion devices (IDs) compared to the rings of previous generation. The state of the art ID Magnetic Measurement Facility is being set up in order to be able to certify the stringent requirements on the magnetic field of NSLS-II IDs. The IDs in the project baseline scope include six 3.5m long damping wigglers (DWs) with 100mm period length and 15mm pole gap, two 2.0m Elliptically Polarizing Undulator (EPU) with 49mm period and 11.5mm minimum magnetic gap, two 3.0m long 20mm period and one 1.5m long 21mm period IVU, which the minimum gap of these is 5mm and 5.5mm, respectively. Recently a special device for inelastic X-ray scattering (IXS) beamline has been added to the collection of baseline devices. Three pole wigglers with a 28mm magnetic gap and a peak field over 1 Tesla will be utilized to accommodate the users of the type of radiation which is currently produced with bending magnets at the NSLS.

Tanabe, T.; Chubar, O.; Corwin, T.; Harder, D.A.; He, P.; Kitegi, C.; Rank, J.; Rhein, C.; Rakowsky, G.; Spataro, C.

2011-03-28T23:59:59.000Z

347

Packaging of solid state devices  

DOE Patents [OSTI]

A package for one or more solid state devices in a single module that allows for operation at high voltage, high current, or both high voltage and high current. Low thermal resistance between the solid state devices and an exterior of the package and matched coefficient of thermal expansion between the solid state devices and the materials used in packaging enables high power operation. The solid state devices are soldered between two layers of ceramic with metal traces that interconnect the devices and external contacts. This approach provides a simple method for assembling and encapsulating high power solid state devices.

Glidden, Steven C.; Sanders, Howard D.

2006-01-03T23:59:59.000Z

348

Non- contacting capacitive diagnostic device  

DOE Patents [OSTI]

A non-contacting capacitive diagnostic device includes a pulsed light source for producing an electric field in a semiconductor or photovoltaic device or material to be evaluated and a circuit responsive to the electric field. The circuit is not in physical contact with the device or material being evaluated and produces an electrical signal characteristic of the electric field produced in the device or material. The diagnostic device permits quality control and evaluation of semiconductor or photovoltaic device properties in continuous manufacturing processes.

Ellison, Timothy

2005-07-12T23:59:59.000Z

349

Composition dependent valence band order in c-oriented wurtzite AlGaN layers  

SciTech Connect (OSTI)

The valence band order of polar wurtzite aluminum gallium nitride (AlGaN) layers is analyzed for a dense series of samples, grown heteroepitaxially on sapphire substrates, covering the complete composition range. The excitonic transition energies, found by temperature dependent photoluminescence (PL) spectroscopy, were corrected to the unstrained state using input from X-ray diffraction. k?p theory yields a critical relative aluminum concentration x{sub c}=(0.09±0.05) for the crossing of the uppermost two valence bands for strain free material, shifting to higher values for compressively strained samples, as supported by polarization dependent PL. The analysis of the strain dependent valence band crossing reconciles the findings of other research groups, where sample strain was neglected. We found a bowing for the energy band gap to the valence band with ?{sub 9} symmetry of b{sub ?{sub 9}}=0.85eV, and propose a possible bowing for the crystal field energy of b{sub cf}=?0.12eV. A comparison of the light extraction efficiency perpendicular and parallel to the c axis of Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N quantum well structures is discussed for different compositions.

Neuschl, B., E-mail: benjamin.neuschl@uni-ulm.de; Helbing, J.; Knab, M.; Lauer, H.; Madel, M.; Thonke, K. [Institute of Quantum Matter / Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm (Germany); Meisch, T.; Forghani, K.; Scholz, F. [Institute of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm (Germany); Feneberg, M. [Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg (Germany)

2014-09-21T23:59:59.000Z

350

Spectra and gap amplification for systems with two widely different incommensurate periodicities  

SciTech Connect (OSTI)

We derive analytically the spectrum for the Schroedinger equation for quasiperiodic systems with two length scales: one large ''macroscopic'' scale (e.g., a-italic cos(2..pi..x-italic/lambda)) and one small ''microscopic'' scale (e.g., v-italic cos(2..pi..x-italic)). The phase diagram includes regimes with exponentially narrow gaps due to the slowly varying potential, regimes where the rapidly varying potential amplifies these narrow gaps, and regimes with exponentially narrow ''Landau bands.'' The full ''devil's-staircase'' spectrum with gaps at wave vectors q-italic = m-italic..pi..+n-italic..pi../lambda develops in a hierarchical manner as a-italic increases. The results apply to systems with superlattices, to celestial orbits with two periodic perturbations, to systems with slowly varying lattice distortions, and, in particular, to quasi-one-dimensional magnets such as bis(tetramethyltetraselenafulvalene) perchlorate ((TMTSF)/sub 2/ClO/sub 4/) in magnetic fields, where our findings may provide insight into the experimentally observed cascade of phase transitions.

Azbel, M.Y.; Bak, P.; Chaikin, P.M.

1986-08-01T23:59:59.000Z

351

Light modulating device  

DOE Patents [OSTI]

In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity.

Rauh, R. David (Newton, MA); Goldner, Ronald B. (Lexington, MA)

1989-01-01T23:59:59.000Z

352

Light modulating device  

DOE Patents [OSTI]

In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity are disclosed. 1 fig.

Rauh, R.D.; Goldner, R.B.

1989-12-26T23:59:59.000Z

353

Nuclear reactor safety device  

DOE Patents [OSTI]

A safety device is disclosed for use in a nuclear reactor for axially repositioning a control rod with respect to the reactor core in the event of an upward thermal excursion. Such safety device comprises a laminated helical ribbon configured as a tube-like helical coil having contiguous helical turns with slidably abutting edges. The helical coil is disclosed as a portion of a drive member connected axially to the control rod. The laminated ribbon is formed of outer and inner laminae. The material of the outer lamina has a greater thermal coefficient of expansion than the material of the inner lamina. In the event of an upward thermal excursion, the laminated helical coil curls inwardly to a smaller diameter. Such inward curling causes the total length of the helical coil to increase by a substantial increment, so that the control rod is axially repositioned by a corresponding amount to reduce the power output of the reactor.

Hutter, Ernest (Wilmette, IL)

1986-01-01T23:59:59.000Z

354

Dielectrokinetic chromatography devices  

DOE Patents [OSTI]

Disclosed herein are methods and devices for dielectrokinetic chromatography. As disclosed, the devices comprise microchannels having at least one perturber which produces a non-uniformity in a field spanning the width of the microchannel. The interaction of the field non-uniformity with a perturber produces a secondary flow which competes with a primary flow. By decreasing the size of the perturber the secondary flow becomes significant for particles/analytes in the nanometer-size range. Depending on the nature of a particle/analyte present in the fluid and its interaction with the primary flow and the secondary flow, the analyte may be retained or redirected. The composition of the primary flow can be varied to affect the magnitude of primary and/or secondary flows on the particles/analytes and thereby separate and concentrate it from other particles/analytes.

Chirica, Gabriela S; Fiechtner, Gregory J; Singh, Anup K

2014-12-16T23:59:59.000Z

355

Regenerative braking device  

DOE Patents [OSTI]

Disclosed are several embodiments of a regenerative braking device for an automotive vehicle. The device includes a plurality of rubber rollers (24, 26) mounted for rotation between an input shaft (14) connectable to the vehicle drivetrain and an output shaft (16) which is drivingly connected to the input shaft by a variable ratio transmission (20). When the transmission ratio is such that the input shaft rotates faster than the output shaft, the rubber rollers are torsionally stressed to accumulate energy, thereby slowing the vehicle. When the transmission ratio is such that the output shaft rotates faster than the input shaft, the rubber rollers are torsionally relaxed to deliver accumulated energy, thereby accelerating or driving the vehicle.

Hoppie, Lyle O. (Birmingham, MI)

1982-01-12T23:59:59.000Z

356

Support and maneuvering device  

DOE Patents [OSTI]

A support and maneuvering device includes an elongated flexible inflatable enclosure having a fixed end and a movable end. The movable end is collapsible toward the fixed end to a contracted position when the enclosure is in a noninflated condition. Upon inflation, the movable end is movable away from the fixed end to an extended position. The movable end includes means for mounting an article such as a solar reflector thereon. The device also includes a plurality of position controlling means disposed about the movable end to effect adjusting movement of portions thereof by predetermined amounts and for controlling an angle at which the article disposed at the movable end is oriented. The plurality of position controlling means limits a suitable number degrees of freedom of the movable end for transmitting a steering motion thereto and for controlling the position thereof. 9 figs.

Wood, R.L.

1987-03-23T23:59:59.000Z

357

Microelectromechanical safe arm device  

DOE Patents [OSTI]

Microelectromechanical (MEM) apparatus and methods for operating, for preventing unintentional detonation of energetic components comprising pyrotechnic and explosive materials, such as air bag deployment systems, munitions and pyrotechnics. The MEM apparatus comprises an interrupting member that can be moved to block (interrupt) or complete (uninterrupt) an explosive train that is part of an energetic component. One or more latching members are provided that engage and prevent the movement of the interrupting member, until the one or more latching members are disengaged from the interrupting member. The MEM apparatus can be utilized as a safe and arm device (SAD) and electronic safe and arm device (ESAD) in preventing unintentional detonations. Methods for operating the MEM apparatus include independently applying drive signals to the actuators coupled to the latching members, and an actuator coupled to the interrupting member.

Roesler, Alexander W. (Tijeras, NM)

2012-06-05T23:59:59.000Z

358

Wire brush fastening device  

DOE Patents [OSTI]

A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus. 13 figs.

Meigs, R.A.

1995-09-19T23:59:59.000Z

359

Note On The Maximal Primes Gaps  

E-Print Network [OSTI]

This note presents a result on the maximal prime gap of the form p_(n+1) - p_n 0 is a constant, for any arbitrarily small real number e > 0, and all sufficiently large integer n > n_0. Equivalently, the result shows that any short interval [x, x + y], y => C(log x)^(1+e), contains prime numbers for all sufficiently large real numbers x => x_0 unconditionally. An application demonstrates that a prime p => x > 2 can be determined in deterministic polynomial time O(log(x)^8).

N. A. Carella

2015-02-05T23:59:59.000Z

360

Turbine blade tip gap reduction system  

DOE Patents [OSTI]

A turbine blade sealing system for reducing a gap between a tip of a turbine blade and a stationary shroud of a turbine engine. The sealing system includes a plurality of flexible seal strips extending from a pressure side of a turbine blade generally orthogonal to the turbine blade. During operation of the turbine engine, the flexible seal strips flex radially outward extending towards the stationary shroud of the turbine engine, thereby reducing the leakage of air past the turbine blades and increasing the efficiency of the turbine engine.

Diakunchak, Ihor S.

2012-09-11T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Complexified cones. Spectral gaps and variational principles  

E-Print Network [OSTI]

We consider contractions of complexified real cones, as recently introduced by Rugh in [Rugh10]. Dubois [Dub09] gave optimal conditions to determine if a matrix contracts a canonical complex cone. First we generalize his results to the case of complex operators on a Banach space and give precise conditions for the contraction and an improved estimate of the size of the associated spectral gap. We then prove a variational formula for the leading eigenvalue similar to the Collatz-Wielandt formula for a real cone contraction. Morally, both cases boil down to the study of suitable collections of 2 by 2 matrices and their contraction properties on the Riemann sphere.

Dubois, Loïc

2010-01-01T23:59:59.000Z

362

Olene Gap Geothermal Project | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision hasInformation Earth'sOklahoma/Geothermal < Oklahoma Jump to: navigation,Olene Gap Geothermal

363

Residual gas analysis device  

DOE Patents [OSTI]

A system is provided for testing the hermeticity of a package, such as a microelectromechanical systems package containing a sealed gas volume, with a sampling device that has the capability to isolate the package and breach the gas seal connected to a pulse valve that can controllably transmit small volumes down to 2 nanoliters to a gas chamber for analysis using gas chromatography/mass spectroscopy diagnostics.

Thornberg, Steven M. (Peralta, NM)

2012-07-31T23:59:59.000Z

364

Biomolecular detection device  

DOE Patents [OSTI]

A device for detecting and measuring the concentration of biomolecules in solution, utilizing a conducting electrode in contact with a solution containing target biomolecules, with a film with controllable pore size distribution characteristics applied to at least one surface of the conducting electrode. The film is functionalized with probe molecules that chemically interact with the target biomolecules at the film surface, blocking indicator molecules present in solution from diffusing from the solution to the electrode, thereby changing the electrochemical response of the electrode.

Huo, Qisheng (Albuquerque, NM); Liu, Jun (Albuquerque, NM)

2008-10-21T23:59:59.000Z

365

Hybrid electroluminescent devices  

DOE Patents [OSTI]

A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

Shiang, Joseph John (Niskayuna, NY); Duggal, Anil Raj (Niskayuna, NY); Michael, Joseph Darryl (Schenectady, NY)

2010-08-03T23:59:59.000Z

366

Mott Insulator-Superfluid Transition in a Generalized Bose-Hubbard Model with Topologically Non-trivial Flat-Band  

E-Print Network [OSTI]

In this paper, we studied a generalized Bose-Hubbard model on a checkerboard lattice with topologically nontrivial flat-band. We used mean-field method to decouple the model Hamiltonian and obtained phase diagram by Landau theory of second-order phase transition. We further calculate the energy gap and the dispersion of quasi-particle or quasi-hole in Mott insulator state and found that in strong interaction limit the quasi-particles or the quasi-holes also have flat bands.

Xing-Hai Zhang; Su-Peng Kou

2012-05-30T23:59:59.000Z

367

Thermophotovoltaic energy conversion device  

DOE Patents [OSTI]

A thermophotovoltaic device and a method for making the thermophotovoltaic device are disclosed. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used. 1 fig.

Charache, G.W.; Baldasaro, P.F.; Egley, J.L.

1998-05-19T23:59:59.000Z

368

Apparatus for loading a band saw blade  

DOE Patents [OSTI]

A band saw blade is loaded between pairs of guide wheels upon tensioning the blade by guiding the blade between pairs of spaced guide plates which define converging slots that converge toward the guide wheels. The approach is particularly useful in loading blades on underwater band saw machines used to cut radioactive materials. 2 figs.

Reeves, S.R.

1990-03-20T23:59:59.000Z

369

Quasiparticle self-consistent GW calculations for PbS, PbSe, and PbTe: Band structure and pressure coefficients  

E-Print Network [OSTI]

and in solar-energy panels.8 With Tl doping PbTe may even exhibit superconductivity.9,10 The lead chalcogenides of states. The pressure-induced gap closure leads to linear Dirac-type band dispersions around the L point states being interchanged.19,25 These states have the same L6 symmetry but different parity and orbital

Svane, Axel Torstein

370

Effects of anneals in ammonia on the interface trap density near the band edges in 4Hsilicon carbide metal-oxide-semiconductor capacitors  

E-Print Network [OSTI]

­silicon carbide metal-oxide-semiconductor capacitors Gilyong Chung, Chin Che Tin, and John R. Williamsa) Physics. Silicon carbide is the only wide band gap semiconductor that has a native oxide, and metal temperature capacitance­voltage measurements are reported for SiO2/4H­SiC n and p type metal

Pantelides, Sokrates T.

371

Multimode imaging device  

DOE Patents [OSTI]

Apparatus for detecting and locating a source of gamma rays of energies ranging from 10-20 keV to several MeV's includes plural gamma ray detectors arranged in a generally closed extended array so as to provide Compton scattering imaging and coded aperture imaging simultaneously. First detectors are arranged in a spaced manner about a surface defining the closed extended array which may be in the form a circle, a sphere, a square, a pentagon or higher order polygon. Some of the gamma rays are absorbed by the first detectors closest to the gamma source in Compton scattering, while the photons that go unabsorbed by passing through gaps disposed between adjacent first detectors are incident upon second detectors disposed on the side farthest from the gamma ray source, where the first spaced detectors form a coded aperture array for two or three dimensional gamma ray source detection.

Mihailescu, Lucian; Vetter, Kai M

2013-08-27T23:59:59.000Z

372

Next Generation Nuclear Plant GAP Analysis Report  

SciTech Connect (OSTI)

As a follow-up to the phenomena identification and ranking table (PIRT) studies conducted recently by NRC on next generation nuclear plant (NGNP) safety, a study was conducted to identify the significant 'gaps' between what is needed and what is already available to adequately assess NGNP safety characteristics. The PIRT studies focused on identifying important phenomena affecting NGNP plant behavior, while the gap study gives more attention to off-normal behavior, uncertainties, and event probabilities under both normal operation and postulated accident conditions. Hence, this process also involved incorporating more detailed evaluations of accident sequences and risk assessments. This study considers thermal-fluid and neutronic behavior under both normal and postulated accident conditions, fission product transport (FPT), high-temperature metals, and graphite behavior and their effects on safety. In addition, safety issues related to coupling process heat (hydrogen production) systems to the reactor are addressed, given the limited design information currently available. Recommendations for further study, including analytical methods development and experimental needs, are presented as appropriate in each of these areas.

Ball, Sydney J [ORNL; Burchell, Timothy D [ORNL; Corwin, William R [ORNL; Fisher, Stephen Eugene [ORNL; Forsberg, Charles W. [Massachusetts Institute of Technology (MIT); Morris, Robert Noel [ORNL; Moses, David Lewis [ORNL

2008-12-01T23:59:59.000Z

373

Quantum confinement in GaP nanoclusters  

SciTech Connect (OSTI)

We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

Laurich, B.K.; Smith, D.C.; Healy, M.D.

1994-06-01T23:59:59.000Z

374

Extended Supersymmetry in Gapped and Superconducting Graphene  

E-Print Network [OSTI]

In view of the many quantum field theoretical descriptions of graphene in $2+1$ dimensions, we present another field theoretical feature of graphene, in the presence of defects. Particularly, we shall be interested in gapped graphene in the presence of a domain wall and also for superconducting graphene in the presence of a vortex. As we explicitly demonstrate, the gapped graphene electrons that are localized on the domain wall are associated with four $N=2$ one dimensional supersymmetries, with each pair combining to form an extended $N=4$ supersymmetry with non-trivial topological charges. The case of superconducting graphene is more involved, with the electrons localized on the vortex being associated with $n$ one dimensional supersymmetries, which in turn combine to form an $N=2n$ extended supersymmetry with no-trivial topological charges. As we shall prove, all supersymmetries are unbroken, a feature closely related to the number of the localized fermions and also to the exact form of the associated oper...

Oikonomou, V K

2014-01-01T23:59:59.000Z

375

Extended Supersymmetry in Gapped and Superconducting Graphene  

E-Print Network [OSTI]

In view of the many quantum field theoretical descriptions of graphene in $2+1$ dimensions, we present another field theoretical feature of graphene, in the presence of defects. Particularly, we shall be interested in gapped graphene in the presence of a domain wall and also for superconducting graphene in the presence of a vortex. As we explicitly demonstrate, the gapped graphene electrons that are localized on the domain wall are associated with four $N=2$ one dimensional supersymmetries, with each pair combining to form an extended $N=4$ supersymmetry with non-trivial topological charges. The case of superconducting graphene is more involved, with the electrons localized on the vortex being associated with $n$ one dimensional supersymmetries, which in turn combine to form an $N=2n$ extended supersymmetry with no-trivial topological charges. As we shall prove, all supersymmetries are unbroken, a feature closely related to the number of the localized fermions and also to the exact form of the associated operators. In addition, the corresponding Witten index is invariant under compact and odd perturbations.

V. K. Oikonomou

2014-11-30T23:59:59.000Z

376

Thermoelectric Materials, Devices and Systems:  

Broader source: Energy.gov (indexed) [DOE]

-DRAFT - FOR OFFICIAL USE ONLY - DRAFT Thermoelectric Materials, Devices and Systems: 1 Technology Assessment 2 Contents 3 1. Thermoelectric Generation ......

377

Production of Fast Neutron With Plasma Focus Device  

E-Print Network [OSTI]

Before its demise DIANA Hi-TECH, LLC, demonstrated the use of two 50 kJoule Plasma Focus devices for the copius production of fast neutrons, x-rays and radio-isotopes. Such a device is suitable for fast neutron non invasive interogation of contra-band materials including hidden nuclear materials. It could be particularly useful for a fast and fail safe interogation of large cargo containers, or in merchant marine port of entries. The performance and fast neutron production (2.5 or 14 MeV at 10^11 or 10^13 neutrons per pulse, respectively) of the two PF50 Plasma Focus devices produced by DIANA HiTECH, LLC, are discussed.

Moshe Gai

2006-05-05T23:59:59.000Z

378

Production of Fast Neutron With Plasma Focus Device  

E-Print Network [OSTI]

Before its demise DIANA Hi-TECH, LLC, demonstrated the use of two 50 kJoule Plasma Focus devices for the copius production of fast neutrons, x-rays and radio-isotopes. Such a device is suitable for fast neutron non invasive interogation of contra-band materials including hidden nuclear materials. It could be particularly useful for a fast and fail safe interogation of large cargo containers, or in merchant marine port of entries. The performance and fast neutron production (2.5 or 14 MeV at 10^11 or 10^13 neutrons per pulse, respectively) of the two PF50 Plasma Focus devices produced by DIANA HiTECH, LLC, are discussed.

Gai, M

2006-01-01T23:59:59.000Z

379

Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices  

SciTech Connect (OSTI)

Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials that convert heat into electricity or actively remove heat for refrigeration and cooling purposes. Thermoelectric devices resemble computer chips, and they manage heat by manipulating the direction of electrons at the nanoscale. These devices aren’t new, but they are currently too inefficient and expensive for widespread use. Phononic Devices is using a high-performance, cost-effective thermoelectric design that will improve the device’s efficiency and enable electronics manufacturers to more easily integrate them into their products.

None

2009-12-11T23:59:59.000Z

380

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P  

E-Print Network [OSTI]

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P An Chen1,a-bandgap semiconductor AlxGa1-xP is a promising material candidate for low-noise photodiodes in blue/UV spectrum. Photodiodes were fabricated on Al0.5Ga0.5P epitaxial layer grown lattice matched on GaP substrate by molecular

Woodall, Jerry M.

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Subband gap impact ionization and excitation in carbon nanotube transistors  

E-Print Network [OSTI]

nanomaterials, semiconductor and optoelectronic devices, lasers and their applications. The specialization ELEC 462 Optoelectronic Devices PHYS 302 Intermediate Electrodynamics PHYS 311 Introduction to Quantum

Alam, Muhammad A.

382

Portable Source Identification Device  

SciTech Connect (OSTI)

U.S. Customs and Border Protection (CBP) is the primary enforcement agency protecting the nation’s ports of entry. CBP is enhancing its capability to interdict the illicit import of nuclear and radiological materials and devices that may be used by terrorists. Pacific Northwest National Laboratory (PNNL) is providing scientific and technical support to CBP in their goal to enable rapid deployment of nuclear and radiation detection systems at U. S. ports of entry to monitor 100% of the incoming international traffic and cargo while not adversely impacting the operations or throughput of the ports. As the deployment of radiation detection systems proceeds, there is a need to adapt the baseline radiation portal monitor (RPM) system technology to operations at these diverse ports of entry. When screening produces an alarm in the primary inspection RPM, the alarming vehicle is removed from the flow of commerce and the alarm is typically confirmed in a secondary inspection RPM. The portable source identification device (PSID) is a radiation sensor panel (RSP), based on thallium-doped sodium iodide (NaI(Tl)) scintillation detector and gamma spectroscopic analysis hardware and software, mounted on a scissor lift on a small truck. The lift supports a box containing a commercial off-the-shelf (COTS) sodium iodide detector that provides real-time isotopic identification, including neutron detectors to interdict Weapons of Mass Destruction (WMD) and radiation dispersion devices (RDD). The scissor lift will lower the detectors to within a foot off the ground and raise them to approximately 24 feet in the air, allowing a wide vertical scanning range.

Andersen, Eric S.; Samuel, Todd J.; Gervais, Kevin L.

2005-08-01T23:59:59.000Z

383

Arc voltage distribution skewness as an indicator of electrode gap during vacuum arc remelting  

DOE Patents [OSTI]

The electrode gap of a VAR is monitored by determining the skewness of a distribution of gap voltage measurements. A decrease in skewness indicates an increase in gap and may be used to control the gap.

Williamson, Rodney L. (Albuquerque, NM); Zanner, Frank J. (Sandia Park, NM); Grose, Stephen M. (Glenwood, WV)

1998-01-01T23:59:59.000Z

384

Arc voltage distribution skewness as an indicator of electrode gap during vacuum arc remelting  

DOE Patents [OSTI]

The electrode gap of a VAR is monitored by determining the skewness of a distribution of gap voltage measurements. A decrease in skewness indicates an increase in gap and may be used to control the gap. 4 figs.

Williamson, R.L.; Zanner, F.J.; Grose, S.M.

1998-01-13T23:59:59.000Z

385

Micro environmental sensing device  

DOE Patents [OSTI]

A microelectromechanical (MEM) acceleration switch is disclosed which includes a proof mass flexibly connected to a substrate, with the proof mass being moveable in a direction substantially perpendicular to the substrate in response to a sensed acceleration. An electrode on the proof mass contacts one or more electrodes located below the proof mass to provide a switch closure in response to the sensed acceleration. Electrical latching of the switch in the closed position is possible with an optional latching electrode. The MEM acceleration switch, which has applications for use as an environmental sensing device, can be fabricated using micromachining.

Polosky, Marc A. (Tijeras, NM); Lukens, Laurance L. (Tijeras, NM)

2006-05-02T23:59:59.000Z

386

Stretchable and foldable electronic devices  

DOE Patents [OSTI]

Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

2014-12-09T23:59:59.000Z

387

Stretchable and foldable electronic devices  

DOE Patents [OSTI]

Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

2013-10-08T23:59:59.000Z

388

Compact Electrothermal Modeling of an X-band MMIC Sonali Luniya William Batty Vincent Caccamesi Mikael Garcia Carlos Christoffersen  

E-Print Network [OSTI]

must be captured at the period of the carrier signals or at least at the envelope rate. Thermal of lumped electrical devices and compact thermal modeling of volu- metric materials enables efficient electrothermal modeling of microwave circuits. The compact thermal model of the body of an X-band MMIC is based

Davis, Rhett

389

Surface functionalization of graphene devices  

E-Print Network [OSTI]

Graphene, a zero-gap semiconductor with massless charge carriers, is emerging as an amazing material for future electronics, due to its outstanding electrical and mechanical performances. However, the lack of a bandgap ...

Zhang, Xu, S.M. Massachusetts Institute of Technology

2012-01-01T23:59:59.000Z

390

One-photon band gap engineering of borate glass doped with ZnO for photonics applications  

SciTech Connect (OSTI)

Lithium tungsten borate glass of the composition (0.56-x)B{sub 2}O{sub 3}-0.4Li{sub 2}O-xZnO-0.04WO{sub 3} (0 {<=}x{<=} 0.1 mol. %) is prepared for photonics applications. The glass is doped with ZnO to tune the glass absorption characteristics in a wide spectrum range (200-2500 nm). Chemical bond approach, including chemical structure, electronegativity, bond ionicity, nearest-neighbor coordination, and other chemical bonding aspect, is used to analyze and to explain the obtained glass properties such as: transmittance, absorption, electronic structure parameters (bandgap, Fermi level, and Urbach exciton-phonon coupling), Wannier free excitons excitation (applying Elliott's model), and two-photon absorption coefficient as a result of replacement of B{sub 2}O{sub 3} by ZnO.

Abdel-Baki, Manal [Glass Department, National Research Centre, Dokki 12311 Giza (Egypt); Abdel-Wahab, Fathy A.; El-Diasty, Fouad [Physics Department, Faculty of Science, Ain Shams University, Abbasia, 11566 Cairo (Egypt)

2012-04-01T23:59:59.000Z

391

PHYSICAL REVIEW B 84, 245206 (2011) First-principles study of band gap engineering via oxygen vacancy doping  

E-Print Network [OSTI]

formulate guidelines that can be used to predict the location of oxygen vacancies in perovskite solid transport of O2- ions through the oxide electrolyte membrane over a range of temperatures. In solar energy several chemical compositions and different cation arrangements for the two Zr-modified solid solutions

Rappe, Andrew M.

392

Exploring Visible-Light-Responsive Photocatalysts for Water Splitting Based on Novel Band-gap Engineering Strategies  

E-Print Network [OSTI]

Chapter 4 Boron Carbides as Efficient, Metal-Free, Visible-and transition metals, the boron carbide products werex Chapter Boron Carbides as Efficient, Metal-free, Visible-

Liu, Jikai

2013-01-01T23:59:59.000Z

393

Propagation of Lamb waves in one-dimensional quasiperiodic composite thin plates: A split of phonon band gap  

E-Print Network [OSTI]

Propagation of Lamb waves in one-dimensional quasiperiodic composite thin plates: A split of phonon the propagation of Lamb waves in one-dimensional quasiperiodic composite thin plates made of tungsten B spectra, Raman scattering spectra, and propagating modes of acoustic waves on corrugated surfaces.14

Li, Baowen

394

Nature of the Band Gap and Origin of the Electro-/Photo-Activity of Co3O4.  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andDataNational Library of1, 2007 (next release3,3,NatureNature|

395

PHYSICAL REVIEW B 86, 085123 (2012) Composition-dependent oxygen vacancy formation in multicomponent wide-band-gap oxides  

E-Print Network [OSTI]

PHYSICAL REVIEW B 86, 085123 (2012) Composition-dependent oxygen vacancy formation University of Science and Technology, Rolla, Missouri 65409, USA (Received 17 April 2012; revised manuscript received 19 July 2012; published 16 August 2012) The formation and distribution of oxygen vacancy

Medvedeva, Julia E.

396

Optical absorption and band gap reduction in (Fe1-xCrx)2O3 solid solutions:  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - September 2006 The 2002 WholesaleEnergy'sRunningOperationsDistribution,RainA

397

Fluid flow monitoring device  

DOE Patents [OSTI]

A flow meter and temperature measuring device are described comprising a tube with a body centered therein for restricting flow and a sleeve at the upper end of the tube to carry several channels formed longitudinally in the sleeve to the appropriate axial location where they penetrate the tube to allow pressure measurements and temperature measurements with thermocouples. The high pressure measurement is made using a channel penetrating the tube away from the body and the low pressure measurement is made at a location at the widest part of the body. An end plug seals the end of the device and holes at its upper end allow fluid to pass from the interior of the tube into a plenum. The channels are made by cutting grooves in the sleeve, the grooves widened at the surface of the sleeve and then a strip of sleeve material is welded to the grooves closing the channels. Preferably the sleeve is packed with powdered graphite before cutting the grooves and welding the strips. 7 figures.

McKay, M.D.; Sweeney, C.E.; Spangler, B.S. Jr.

1993-11-30T23:59:59.000Z

398

Fluid flow monitoring device  

DOE Patents [OSTI]

A flow meter and temperature measuring device comprising a tube with a body centered therein for restricting flow and a sleeve at the upper end of the tube to carry several channels formed longitudinally in the sleeve to the appropriate axial location where they penetrate the tube to allow pressure measurements and temperature measurements with thermocouples. The high pressure measurement is made using a channel penetrating the tube away from the body and the low pressure measurement is made at a location at the widest part of the body. An end plug seals the end of the device and holes at its upper end allow fluid to pass from the interior of the tube into a plenum. The channels are made by cutting grooves in the sleeve, the grooves widened at the surface of the sleeve and then a strip of sleeve material is welded to the grooves closing the channels. Preferably the sleeve is packed with powdered graphite before cutting the grooves and welding the strips.

McKay, Mark D. (1426 Socastee Dr., North Augusta, SC 29841); Sweeney, Chad E. (3600 Westhampton Dr., Martinez, GA 30907-3036); Spangler, Jr., B. Samuel (2715 Margate Dr., Augusta, GA 30909)

1993-01-01T23:59:59.000Z

399

Carbon based prosthetic devices  

SciTech Connect (OSTI)

This is the final report of a one-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project objective was to evaluate the use of carbon/carbon-fiber-reinforced composites for use in endoprosthetic devices. The application of these materials for the metacarpophalangeal (MP) joints of the hand was investigated. Issues concerning mechanical properties, bone fixation, biocompatibility, and wear are discussed. A system consisting of fiber reinforced materials with a pyrolytic carbon matrix and diamond-like, carbon-coated wear surfaces was developed. Processes were developed for the chemical vapor infiltration (CVI) of pyrolytic carbon into porous fiber preforms with the ability to tailor the outer porosity of the device to provide a surface for bone in-growth. A method for coating diamond-like carbon (DLC) on the articulating surface by plasma-assisted chemical vapor deposition (CVD) was developed. Preliminary results on mechanical properties of the composite system are discussed and initial biocompatibility studies were performed.

Devlin, D.J.; Carroll, D.W.; Barbero, R.S.; Archuleta, T. [Los Alamos National Lab., NM (US); Klawitter, J.J.; Ogilvie, W.; Strzepa, P. [Ascension Orthopedics (US); Cook, S.D. [Tulane Univ., New Orleans, LA (US). School of Medicine

1998-12-31T23:59:59.000Z

400

Rotational bands in odd-A Cm and Cf isotopes: Exploring the highest neutron orbitals  

SciTech Connect (OSTI)

Rotational bands have been identified up to high spins ({approx_equal}28({h_bar}/2{pi})) in the odd-A nuclei {sup 247,249}Cm and {sup 249}Cf through inelastic excitation and transfer reactions around the Z=100 region where stability results from shell effects. The [620]1/2 Nilsson configuration in {sup 249}Cm is the highest-lying neutron orbital, from above the N=164 spherical subshell gap, for which high-spin rotational behavior has been established. The data allow for an unambiguous experimental assignment of configurations to the observed bands, unusual for odd-A nuclei near Z=100. The high-spin properties are described in terms of Woods-Saxon cranking calculations.

Tandel, S. K.; Chowdhury, P.; Lakshmi, S.; Tandel, U. S. [Department of Physics, University of Massachusetts Lowell, Lowell, Massachusetts 01854 (United States); Ahmad, I.; Carpenter, M. P.; Gros, S.; Janssens, R. V. F.; Khoo, T. L.; Kondev, F. G.; Greene, J. P.; Lauritsen, T.; Lister, C. J.; Peterson, D.; Robinson, A.; Seweryniak, D.; Zhu, S. [Argonne National Laboratory, Argonne, Illinois 60439 (United States); Hartley, D. J. [Department of Physics, US Naval Academy, Annapolis, Maryland 21402 (United States)

2010-10-15T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Maximum Likelihood Sub-band Weighting for Robust Speech Recognition  

E-Print Network [OSTI]

, bins of log filter-band energy (FBE) in each sub-band are multiplied with a weighting factor depending on the reliability of the sub-band. For each sub-band, zero padding is performed on the log FBE vector lengthening. For the DCT has the size of full-band FBE vector, the feature vector consists of the correlations across

402

IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 7, JULY 2012 1993 Some Semiconductor Device Physics  

E-Print Network [OSTI]

of the envelope" calculations are correct, we simulated the band diagram using Silvaco. The simulated band diagram

Schroder, Dieter K.

403

Sensitivity Analysis of the Gap Heat Transfer Model in BISON.  

SciTech Connect (OSTI)

This report summarizes the result of a NEAMS project focused on sensitivity analysis of the heat transfer model in the gap between the fuel rod and the cladding used in the BISON fuel performance code of Idaho National Laboratory. Using the gap heat transfer models in BISON, the sensitivity of the modeling parameters and the associated responses is investigated. The study results in a quantitative assessment of the role of various parameters in the analysis of gap heat transfer in nuclear fuel.

Swiler, Laura Painton; Schmidt, Rodney C.; Williamson, Richard (INL); Perez, Danielle (INL)

2014-10-01T23:59:59.000Z

404

Rotational band properties in {sup 165}Er  

SciTech Connect (OSTI)

High-spin states in {sup 165}Er have been studied experimentally using the {sup 160}Gd({sup 9}Be, 4n) reaction at beam energies of 42 and 45 MeV. The previously known bands based on the 5/2{sup +}[642], 5/2{sup -}[523], and 11/2{sup -}[505] configurations are extended to (49/2{sup +}), (45/2{sup -}), and (31/2{sup -}) states, respectively. The rotational bands in {sup 165}Er generally show gradual alignment processes, indicating strong band interactions associated with the i{sub 13/2} neutron alignments. The band properties are compared with those in the neighboring nuclei and discussed within the framework of the cranked shell model.

Wang, S. T. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Zhou, X. H.; Zhang, Y. H.; Zheng, Y.; Liu, M. L.; Chen, L.; Zhang, N. T.; Hua, W.; Guo, S.; Qiang, Y. H.; Li, G. S.; Ding, B. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Shi, Y.; Xu, F. R. [School of Physics, and State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871 (China)

2011-07-15T23:59:59.000Z

405

Catalysis by Design: Bridging the Gap Between Theory and Experiments...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Between Theory and Experiments at Nanoscale Level Catalysis by Design: Bridging the Gap Between Theory and Experiments at Nanoscale Level Studies on a simple platinum-alumina...

406

Catalysis by Design: Bridging the Gap between Theory and Experiments...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

between Theory and Experiments Catalysis by Design: Bridging the Gap between Theory and Experiments Poster presentation at the 2007 Diesel Engine-Efficiency & Emissions Research...

407

FAQS Gap Analysis Qualification Card – Fire Protection Engineering  

Broader source: Energy.gov [DOE]

Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

408

FAQS Gap Analysis Qualification Card – Nuclear Explosive Safety Study  

Broader source: Energy.gov [DOE]

Functional Area Qualification Standard Gap Analysis Qualification Cards outline the differences between the last and latest version of the FAQ Standard.

409

Dipole Bands in {sup 196}Hg  

SciTech Connect (OSTI)

High spin states in {sup 196}Hg have been populated in the {sup 198}Pt({alpha},6n) reaction at 65 MeV and the level scheme has been extended. A new dipole band has been observed and a previously observed dipole has been confirmed. Excitation energies, spins and parities of these bands were determined from DCO ratio and linear polarization measurements. Possible quasiparticle excitations responsible for these structures are discussed.

Lawrie, J. J.; Lawrie, E. A.; Newman, R. T.; Sharpey-Schafer, J. F.; Smit, F. D. [iThemba LABS, PO Box 722, Somerset West 7129 (South Africa); Msezane, B. [iThemba LABS, PO Box 722, Somerset West 7129 (South Africa); Physics Department, University of Zululand, Private Bag X1001, Kwadlangezwa 3886 (South Africa); Benatar, M.; Mabala, G. K.; Mutshena, K. P. [iThemba LABS, PO Box 722, Somerset West 7129 (South Africa); Physics Department, University of Cape Town, Rondebosch 7700 (South Africa); Federke, M.; Mullins, S. M. [Physics Department, University of Cape Town, Rondebosch 7700 (South Africa); Ncapayi, N. J.; Vymers, P. [iThemba LABS, PO Box 722, Somerset West 7129 (South Africa); Physics Department, University of the Western Cape, Private Bag X17, Belleville 7535 (South Africa)

2011-10-28T23:59:59.000Z

410

Fuel vapor control device  

SciTech Connect (OSTI)

A fuel vapor control device is described having a valve opening and closing a passage connecting a carburetor and a charcoal canister according to a predetermined temperature. A first coil spring formed by a ''shape memory effect'' alloy is provided to urge the valve to open the passage when the temperature is high. A second coil spring urges the valve to close the passage. A solenoid is provided to urge an armature against the valve to close the passage against the force of the first coil spring when the engine is running. The solenoid heats the first coil spring to generate a spring force therein when the engine is running. When the engine is turned off, the solenoid is deactivated, and the force of the first spring overcomes the force of the second spring to open the passage until such time as the temperature of the first spring drops below the predetermined temperature.

Ota, I.; Nishimura, Y.; Nishio, S.; Yogo, K.

1987-10-20T23:59:59.000Z

411

Ceramics for fusion devices  

SciTech Connect (OSTI)

Ceramics are required for a number of applications in fusion devices, among the most critical of which are magnetic coil insulators, windows for RF heating systems, and structural uses. Radiation effects dominate consideration of candidate materials, although good pre-irradiation properties are a requisite. Materials and components can be optimized by careful control of chemical and microstructural content, and application of brittle material design and testing techniques. Future directions for research and development should include further extension of the data base in the areas of electrical, structural, and thermal properties; establishment of a fission neutron/fusion neutron correlation including transmutation gas effects; and development of new materials tailored to meet the specific needs of fusion reactors.

Clinard, F.W. Jr.

1984-01-01T23:59:59.000Z

412

False color viewing device  

DOE Patents [OSTI]

This invention consists of a viewing device for observing objects in near-infrared false-color comprising a pair of goggles with one or more filters in the apertures, and pads that engage the face for blocking stray light from the sides so that all light reaching, the user`s eyes come through the filters. The filters attenuate most visible light and pass near-infrared (having wavelengths longer than approximately 700 nm) and a small amount of blue-green and blue-violet (having wavelengths in the 500 to 520 nm and shorter than 435 nm, respectively). The goggles are useful for looking at vegetation to identify different species and for determining the health of the vegetation, and to detect some forms of camouflage.

Kronberg, J.W.

1991-05-08T23:59:59.000Z

413

Tunable surface plasmon devices  

DOE Patents [OSTI]

A tunable extraordinary optical transmission (EOT) device wherein the tunability derives from controlled variation of the dielectric constant of a semiconducting material (semiconductor) in evanescent-field contact with a metallic array of sub-wavelength apertures. The surface plasmon resonance wavelength can be changed by changing the dielectric constant of the dielectric material. In embodiments of this invention, the dielectric material is a semiconducting material. The dielectric constant of the semiconducting material in the metal/semiconductor interfacial region is controllably adjusted by adjusting one or more of the semiconductor plasma frequency, the concentration and effective mass of free carriers, and the background high-frequency dielectric constant in the interfacial region. Thermal heating and/or voltage-gated carrier-concentration changes may be used to variably adjust the value of the semiconductor dielectric constant.

Shaner, Eric A. (Rio Rancho, NM); Wasserman, Daniel (Lowell, MA)

2011-08-30T23:59:59.000Z

414

Light emitting ceramic device  

DOE Patents [OSTI]

A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

2010-05-18T23:59:59.000Z

415

Nuclear reactor safety device  

DOE Patents [OSTI]

A safety device is described for use in a nuclear reactor for axially repositioning a control rod with respect to the reactor core in the event of a thermal excursion. It comprises a laminated strip helically configured to form a tube, said tube being in operative relation to said control rod. The laminated strip is formed of at least two materials having different thermal coefficients of expansion, and is helically configured such that the material forming the outer lamina of the tube has a greater thermal coefficient of expansion than the material forming the inner lamina of said tube. In the event of a thermal excursion the laminated strip will tend to curl inwardly so that said tube will increase in length, whereby as said tube increases in length it exerts a force on said control rod to axially reposition said control rod with respect to said core.

Hutter, E.

1983-08-15T23:59:59.000Z

416

Capillary interconnect device  

DOE Patents [OSTI]

A manifold for connecting external capillaries to the inlet and/or outlet ports of a microfluidic device for high pressure applications is provided. The fluid connector for coupling at least one fluid conduit to a corresponding port of a substrate that includes: (i) a manifold comprising one or more channels extending therethrough wherein each channel is at least partially threaded, (ii) one or more threaded ferrules each defining a bore extending therethrough with each ferrule supporting a fluid conduit wherein each ferrule is threaded into a channel of the manifold, (iii) a substrate having one or more ports on its upper surface wherein the substrate is positioned below the manifold so that the one or more ports is aligned with the one or more channels of the manifold, and (iv) means for applying an axial compressive force to the substrate to couple the one or more ports of the substrate to a corresponding proximal end of a fluid conduit.

Renzi, Ronald F. (Tracy, CA)

2007-12-25T23:59:59.000Z

417

False color viewing device  

DOE Patents [OSTI]

A viewing device for observing objects in near-infrared false-color comprising a pair of goggles with one or more filters in the apertures, and pads that engage the face for blocking stray light from the sides so that all light reaching the user's eyes come through the filters. The filters attenuate most visible light and pass near-infrared (having wavelengths longer than approximately 700 nm) and a small amount of blue-green and blue-violet (having wavelengths in the 500 to 520 nm and shorter than 435 nm, respectively). The goggles are useful for looking at vegetation to identify different species and for determining the health of the vegetation, and to detect some forms of camouflage.

Kronberg, James W. (108 Independent Blvd., Aiken, SC 29801)

1992-01-01T23:59:59.000Z

418

False color viewing device  

DOE Patents [OSTI]

A viewing device for observing objects in near-infrared false-color comprising a pair of goggles with one or more filters in the apertures, and pads that engage the face for blocking stray light from the sides so that all light reaching the user's eyes come through the filters. The filters attenuate most visible light and pass near-infrared (having wavelengths longer than approximately 700 nm) and a small amount of blue-green and blue-violet (having wavelengths in the 500 to 520 nm and shorter than 435 nm, respectively). The goggles are useful for looking at vegetation to identify different species and for determining the health of the vegetation, and to detect some forms of camouflage. 7 figs.

Kronberg, J.W.

1992-10-20T23:59:59.000Z

419

Electrical safety device  

DOE Patents [OSTI]

An electrical safety device for use in power tools that is designed to automatically discontinue operation of the power tool upon physical contact of the tool with a concealed conductive material. A step down transformer is used to supply the operating power for a disconnect relay and a reset relay. When physical contact is made between the power tool and the conductive material, an electrical circuit through the disconnect relay is completed and the operation of the power tool is automatically interrupted. Once the contact between the tool and conductive material is broken, the power tool can be quickly and easily reactivated by a reset push button activating the reset relay. A remote reset is provided for convenience and efficiency of operation.

White, David B. (Greenock, PA)

1991-01-01T23:59:59.000Z

420

Air bag restraint device  

DOE Patents [OSTI]

A rear-seat air bag restraint device is disclosed that prevents an individual, or individuals, from continuing violent actions while being transported in a patrol vehicle`s rear seat without requiring immediate physical contact by the law enforcement officer. The air bag is activated by a control switch in the front seat and inflates to independently restrict the amount of physical activity occurring in the rear seat of the vehicle while allowing the officer to safely stop the vehicle. The air bag can also provide the officer additional time to get backup personnel to aid him if the situation warrants it. The bag is inflated and maintains a constant pressure by an air pump. 8 figs.

Marts, D.J.; Richardson, J.G.

1995-10-17T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Study of transmission line attenuation in broad band millimeter wave frequency range  

SciTech Connect (OSTI)

Broad band millimeter wave transmission lines are used in fusion plasma diagnostics such as electron cyclotron emission (ECE), electron cyclotron absorption, reflectometry and interferometry systems. In particular, the ECE diagnostic for ITER will require efficient transmission over an ultra wide band, 100 to 1000 GHz. A circular corrugated waveguide transmission line is a prospective candidate to transmit such wide band with low attenuation. To evaluate this system, experiments of transmission line attenuation were performed and compared with theoretical loss calculations. A millimeter wave Michelson interferometer and a liquid nitrogen black body source are used to perform all the experiments. Atmospheric water vapor lines and continuum absorption within this band are reported. Ohmic attenuation in corrugated waveguide is very low; however, there is Bragg scattering and higher order mode conversion that can cause significant attenuation in this transmission line. The attenuation due to miter bends, gaps, joints, and curvature are estimated. The measured attenuation of 15 m length with seven miter bends and eighteen joints is 1 dB at low frequency (300 GHz) and 10 dB at high frequency (900 GHz), respectively.

Pandya, Hitesh Kumar B. [ITER-India, IPR, Gandhinagar, Gujarat (India)] [ITER-India, IPR, Gandhinagar, Gujarat (India); Austin, M. E. [Institute for Fusion Studies, the University of Texas at Austin, Austin, Texas (United States)] [Institute for Fusion Studies, the University of Texas at Austin, Austin, Texas (United States); Ellis, R. F. [Laboratory for Plasma and Fusion Energy Studies, University of Maryland, College Park, Maryland 20742 (United States)] [Laboratory for Plasma and Fusion Energy Studies, University of Maryland, College Park, Maryland 20742 (United States)

2013-10-15T23:59:59.000Z

422

Surface photovoltage measurements and finite element modeling of SAW devices.  

SciTech Connect (OSTI)

Over the course of a Summer 2011 internship with the MEMS department of Sandia National Laboratories, work was completed on two major projects. The first and main project of the summer involved taking surface photovoltage measurements for silicon samples, and using these measurements to determine surface recombination velocities and minority carrier diffusion lengths of the materials. The SPV method was used to fill gaps in the knowledge of material parameters that had not been determined successfully by other characterization methods. The second project involved creating a 2D finite element model of a surface acoustic wave device. A basic form of the model with the expected impedance response curve was completed, and the model is ready to be further developed for analysis of MEMS photonic resonator devices.

Donnelly, Christine

2012-03-01T23:59:59.000Z

423

Control Banding and Nanotechnology Synergist  

SciTech Connect (OSTI)

The average Industrial Hygienist (IH) loves a challenge, right? Okay, well here is one with more than a few twists. We start by going through the basics of a risk assessment. You have some chemical agents, a few workers, and the makings of your basic exposure characterization. However, you have no occupational exposure limit (OEL), essentially no toxicological basis, and no epidemiology. Now the real handicap is that you cannot use sampling pumps, cassettes, tubes, or any of the media in your toolbox, and the whole concept of mass-to-dose is out the window, even at high exposure levels. Of course, by the title, you knew we were talking about nanomaterials (NM). However, we wonder how many IHs know that this topic takes everything you know about your profession and turns it upside down. It takes the very foundations that you worked so hard in college and in the field to master and pulls it out from underneath you. It even takes the gold standard of our profession, the quantitative science of exposure assessment, and makes it look pretty darn rusty. Now with NM there is the potential to get some aspect of quantitative measurements, but the instruments are generally very expensive and getting an appropriate workplace personal exposure measurement can be very difficult if not impossible. The potential for workers getting exposures, however, is very real, as evidenced by a recent publication reporting worker exposures to polyacrylate nanoparticles in a Chinese factory (Song et al. 2009). With something this complex and challenging, how does a concept as simple as Control Banding (CB) save the day? Although many IHs have heard of CB, most of their knowledge comes from its application in the COSHH Essentials toolkit. While there is conflicting published research on COSHH Essentials and its value for risk assessments, almost all of the experts agree that it can be useful when no OELs are available (Zalk and Nelson 2008). It is this aspect of CB, its utility with uncertainty, that attracted international NM experts to recommend this qualitative risk assessment approach for NM. However, since their CB recommendation was only in theory, we took on the challenge of developing a working toolkit, the CB Nanotool (see Zalk et al. 2009 and Paik et al. 2008), as a means to perform a risk assessment and protect researchers at the Lawrence Livermore National Laboratory. While it's been acknowledged that engineered NM have potentially endless benefits for society, it became clear to us that the very properties that make nanotechnology so useful to industry could also make them dangerous to humans and the environment. Among the uncertainties and unknowns with NM are: the contribution of their physical structure to their toxicity, significant differences in their deposition and clearance in the lungs when compared to their parent material (PM), a lack of agreement on the appropriate indices for exposure to NM, and very little background information on exposure scenarios or populations at risk. Part of this lack of background information can be traced to the lack of risk assessments historically performed in the industry, with a recent survey indicating that 65% of companies working with NM are not doing any kind of NM-specific risk assessment as they focus on traditional PM methods for IH (Helland et al. 2009). The good news is that the amount of peer-reviewed publications that address environmental, health and safety aspects of NM has been increasing over the last few years; however, the percentage of these that address practical methods to reduce exposure and protect workers is orders of magnitude lower. Our intent in developing the CB Nanotool was to create a simplified approach that would protect workers while unraveling the mysteries of NM for experts and non-experts alike. Since such a large part of the toxicological effects of both the physical and chemical properties of NM were unknown, not to mention changing logarithmically as new NM research continues growing, we needed to account for this lack of information as part of the CB Nano

Zalk, D; Paik, S

2009-12-15T23:59:59.000Z

424

Band structure engineering of anatase TiO{sub 2} by metal-assisted P-O coupling  

SciTech Connect (OSTI)

In this work, we demonstrate that the metal-assisted P-O coupling is an effective approach to improve the photoelectrochemical properties of TiO{sub 2}. The (Sc + P) and (In + P) codoping effects on electronic structures and photocatalytic activities of anatase TiO{sub 2} are examined by performing hybrid density functional theory calculations. It is found that the coupling of P dopant with the second-nearest neighboring O atom assisted by acceptor metals (Sc/In) leads to the fully occupied and delocalized intermediate bands within the band gap of anatase TiO{sub 2}, which is driven by the P-O antibonding states (?*). This metal-assisted P-O coupling can prevent the recombination of photogenerated electron-hole pairs and effectively reduce the band gap of TiO{sub 2}. Moreover, the band edge alignments in (Sc + P) and (In + P) codoped anatase TiO{sub 2} are desirable for water-splitting. The calculated optical absorption curves indicate that (Sc + P) and (In + P) codoping in anatase TiO{sub 2} can also effectively enhance the visible light absorption.

Wang, Jiajun; Meng, Qiangqiang [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China)] [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Huang, Jing [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China) [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); School of Materials and Chemical Engineering, Anhui Jianzhu University, Hefei, Anhui 230601 (China); Li, Qunxiang, E-mail: liqun@ustc.edu.cn; Yang, Jinlong [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China) [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)

2014-05-07T23:59:59.000Z

425

Behavioral/Systems/Cognitive Synchronous, Focally Modulated -Band Oscillations  

E-Print Network [OSTI]

, primarily synchronous -band voltage oscillations occur in the sensorimotor and frontal cortex of humansBehavioral/Systems/Cognitive Synchronous, Focally Modulated -Band Oscillations Characterize Local oscillations in the -frequency band ( 15­30Hz

Graybiel, Ann M.

426

High Field W-Band (95 GHz) EPR | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

High Field W-Band (95 GHz) EPR High Field W-Band (95 GHz) EPR The W-band pulsed EPR spectrometer, introduced in 2011, is one of only two of its design worldwide. It uses a...

427

A Mid-infrared QEPAS sensor device for TATP detection , U Willer1  

E-Print Network [OSTI]

A Mid-infrared QEPAS sensor device for TATP detection C Bauer1 , U Willer1 , R Lewicki2 applications in laser spectroscopy of trace gas species in the mid-infrared spectral region. We report for the detection of the explosive TATP which is a mid infrared broad band absorber. The detection limit of our

428

Microbiopsy/precision cutting devices  

DOE Patents [OSTI]

Devices are disclosed for performing tissue biopsy on a small scale (microbiopsy). By reducing the size of the biopsy tool and removing only a small amount of tissue or other material in a minimally invasive manner, the risks, costs, injury and patient discomfort associated with traditional biopsy procedures can be reduced. By using micromachining and precision machining capabilities, it is possible to fabricate small biopsy/cutting devices from silicon. These devices can be used in one of four ways (1) intravascularly, (2) extravascularly, (3) by vessel puncture, and (4) externally. Additionally, the devices may be used in precision surgical cutting. 6 figs.

Krulevitch, P.A.; Lee, A.P.; Northrup, M.A.; Benett, W.J.

1999-07-27T23:59:59.000Z

429

Microbiopsy/precision cutting devices  

DOE Patents [OSTI]

Devices for performing tissue biopsy on a small scale (microbiopsy). By reducing the size of the biopsy tool and removing only a small amount of tissue or other material in a minimally invasive manner, the risks, costs, injury and patient discomfort associated with traditional biopsy procedures can be reduced. By using micromachining and precision machining capabilities, it is possible to fabricate small biopsy/cutting devices from silicon. These devices can be used in one of four ways 1) intravascularly, 2) extravascularly, 3) by vessel puncture, and 4) externally. Additionally, the devices may be used in precision surgical cutting.

Krulevitch, Peter A. (Pleasanton, CA); Lee, Abraham P. (Walnut Creek, CA); Northrup, M. Allen (Berkeley, CA); Benett, William J. (Livermore, CA)

1999-01-01T23:59:59.000Z

430

Automated control of microfluidics devices.  

E-Print Network [OSTI]

??In order for microfluidics devices to be marketable, they must be inexpensive and easy to use. Two projects were pursued in this study for this… (more)

Gerstel, Ian.

2010-01-01T23:59:59.000Z

431

Structured wafer for device processing  

SciTech Connect (OSTI)

A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

Okandan, Murat; Nielson, Gregory N

2014-11-25T23:59:59.000Z

432

NOVEMBER 2003 2705J O R G E N S E N E T A L . Variations Associated with Cores and Gaps of a Pacific Narrow Cold Frontal Rainband  

E-Print Network [OSTI]

Experiment. Airborne Doppler radar data obtained while the frontal system was well offshore indicated ends of the cores and just north of the gaps, the wind shear weakened with less intense updrafts that tilted upshear and contained a broader band of rainfall. Simulations using the nonhydrostatic nested grid

Pu, Zhaoxia

433

ERDC/CERLTR-05-38 Determining Research Gaps  

E-Print Network [OSTI]

ERDC/CERLTR-05-38 Determining Research Gaps in Disturbance Data for Fort Bliss and a Conceptual-38 November 2005 Determining Research Gaps in Disturbance Data for Fort Bliss and a Conceptual Model Tamara Bliss #12;ABSTRACT Numerous research and outside monitoring efforts have been completed for Fort Bliss

Fehmi, Jeffrey S.

434

Anisotropic Energy Gaps of Iron-Based Superconductivity from Intraband Quasiparticle Interference in LiFeAs  

SciTech Connect (OSTI)

If strong electron-electron interactions between neighboring Fe atoms mediate the Cooper pairing in iron-pnictide superconductors, then specific and distinct anisotropic superconducting energy gaps {Delta}{sub i}(k) should appear on the different electronic bands i. Here, we introduce intraband Bogoliubov quasiparticle scattering interference (QPI) techniques for determination of {Delta}{sub i}(k) in such materials, focusing on lithium iron arsenide (LiFeAs). We identify the three hole-like bands assigned previously as {gamma}, {alpha}{sub 2}, and {alpha}{sub 1}, and we determine the anisotropy, magnitude, and relative orientations of their {Delta}{sub i}(k). These measurements will advance quantitative theoretical analysis of the mechanism of Cooper pairing in iron-based superconductivity.

Davis J. C.; Allan, M.P.; Rost, A.W.; Mackenzie, A.P.; Xie, Y.; Kihou, K.; Lee, C.H.; Iyo, A.; Eisaki, H.; Chuang, T.-M.

2012-05-04T23:59:59.000Z

435

Temperature differential detection device  

DOE Patents [OSTI]

A temperature differential detection device for detecting the temperature differential between predetermined portions of a container wall is disclosed as comprising a Wheatstone bridge circuit for detecting resistance imbalance with a first circuit branch having a first elongated wire element mounted in thermal contact with a predetermined portion of the container wall, a second circuit branch having a second elongated wire element mounted in thermal contact with a second predetermined portion of a container wall with the wire elements having a predetermined temperature-resistant coefficient, an indicator interconnected between the first and second branches remote from the container wall for detecting and indicating resistance imbalance between the first and second wire elements, and connector leads for electrically connecting the wire elements to the remote indicator in order to maintain the respective resistance value relationship between the first and second wire elements. The indicator is calibrated to indicate the detected resistance imbalance in terms of a temperature differential between the first and second wall portions. 2 figs.

Girling, P.M.

1986-04-22T23:59:59.000Z

436

Mobile Device Policy & Program Considerations  

E-Print Network [OSTI]

Page 1 Mobile Device Policy & Program Considerations To BYOD or not to BYOD (bring to manage the use of mobile devices within their corporate resources. Every business will naturally have different mobility requirements, and developing a policy in the first place, let alone an appropriate policy

Fisher, Kathleen

437

System-level, Unified In-band and Out-of-band Dynamic Thermal Control  

E-Print Network [OSTI]

of the decrease in computation capacity. Less studied are out-of-band techniques (e.g. CPU cooling fans [10]) that operate completely outside the critical performance path of an application. Out-of-band techniques cool system slowdowns or shutdowns. Techniques such as dynamically scaling down the voltage of the CPUs

438

Energy Band Model Based on Effective Mass  

E-Print Network [OSTI]

In this work, we demonstrate an alternative method of deriving an isotropic energy band model using a one-dimensional definition of the effective mass and experimentally observed dependence of mass on energy. We extend the effective mass definition to anti-particles and particles with zero rest mass. We assume an often observed linear dependence of mass on energy and derive a generalized non-parabolic energy-momentum relation. The resulting non-parabolicity leads to velocity saturation at high particle energies. We apply the energy band model to free relativistic particles and carriers in solid state materials and obtain commonly used dispersion relations and experimentally confirmed effective masses. We apply the model to zero rest mass particles in graphene and propose using the effective mass for photons. Therefore, it appears that the new energy band model based on the effective mass can be applied to relativistic particles and carriers in solid state materials.

Viktor Ariel

2012-09-06T23:59:59.000Z

439

Automatic Mechetronic Wheel Light Device  

DOE Patents [OSTI]

A wheel lighting device for illuminating a wheel of a vehicle to increase safety and enhance aesthetics. The device produces the appearance of a "ring of light" on a vehicle's wheels as the vehicle moves. The "ring of light" can automatically change in color and/or brightness according to a vehicle's speed, acceleration, jerk, selection of transmission gears, and/or engine speed. The device provides auxiliary indicator lights by producing light in conjunction with a vehicle's turn signals, hazard lights, alarm systems, and etc. The device comprises a combination of mechanical and electronic components and can be placed on the outer or inner surface of a wheel or made integral to a wheel or wheel cover. The device can be configured for all vehicle types, and is electrically powered by a vehicle's electrical system and/or battery.

Khan, Mohammed John Fitzgerald (Silver Spring, MD)

2004-09-14T23:59:59.000Z

440

UNIDENTIFIED INFRARED EMISSION BANDS: PAHs or MAONs?  

SciTech Connect (OSTI)

We suggest that the carrier of the unidentified infrared emission (UIE) bands is an amorphous carbonaceous solid with mixed aromatic/aliphatic structures, rather than free-flying polycyclic aromatic hydrocarbon molecules. Through spectral fittings of the astronomical spectra of the UIE bands, we show that a significant amount of the energy is emitted by the aliphatic component, implying that aliphatic groups are an essential part of the chemical structure. Arguments in favor of an amorphous, solid-state structure rather than a gas-phase molecule as a carrier of the UIE are also presented.

Sun Kwok; Yong Zhang, E-mail: sunkwok@hku.hk [Department of Physics, University of Hong Kong, Pokfulam Road, Hong Kong (Hong Kong)

2013-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Terahertz generation and detection with InGaAs-based large-area photoconductive devices excited at 1.55??m  

SciTech Connect (OSTI)

We report on scalable large-area terahertz emitters and detectors based on In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures for excitation with 1.55??m radiation. Different geometries involving three different electrode gap sizes are compared with respect to terahertz (THz) emission, bias field distribution, and Joule heating. The field distribution becomes more favorable for THz emission as gap size increases, while Joule heating exhibits the opposite dependence. Devices with three different gap sizes, namely 3??m, 5??m, and 7.5??m, have been investigated experimentally, the emitter with a gap size of 7.5??m showed the best performance. The scalable devices are furthermore employed as detectors. The scalable electrode geometry enables spatially integrated detection, which is attractive for specific applications, e.g., where an unfocused THz beam has to be used.

Xu, Ming [Applied Physics Department, Xi'an University of Technology, No. 58 Yanxiang Road, Xi'an 710054 (China) [Applied Physics Department, Xi'an University of Technology, No. 58 Yanxiang Road, Xi'an 710054 (China); Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany); Mittendorff, Martin; Helm, Manfred [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany) [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany); Technische Universität Dresden, 01062 Dresden (Germany); Dietz, Roman J. B.; Künzel, Harald; Sartorius, Bernd; Göbel, Thorsten [Fraunhofer Institute for Telecommunication, Heinrich-Hertz-Institute, Einsteinufer 37, 10587 Berlin (Germany)] [Fraunhofer Institute for Telecommunication, Heinrich-Hertz-Institute, Einsteinufer 37, 10587 Berlin (Germany); Schneider, Harald; Winnerl, Stephan [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany)] [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany)

2013-12-16T23:59:59.000Z

442

British Academy (e-GAP2) Guide for Applicants The British Academy e-GAP2 applicant guide July 2012 Page 1  

E-Print Network [OSTI]

British Academy (e-GAP2) Guide for Applicants The British Academy e-GAP2 applicant guide July 2012 Page 1 2012 INTERNAL USER GUIDE A Guide to the British Academy Electronic Submission System (e-GAP2) A Quick Guide for Applicants applying for funding using the e-GAP2 System The British Academy web page

443

Pairing Gaps, Pseudogaps, and Phase Diagrams for Cuprate Superconductors  

E-Print Network [OSTI]

We use a symmetry-constrained variational procedure to construct a generalization of BCS to include Cooper pairs with non-zero momentum and angular momentum. The resulting gap equations are solved at zero and finite temperature, and the doping-dependent solutions are used to construct gap and phase diagrams. We find a pseudogap terminating at a critical doping that may be interpreted in terms of both competing order and preformed pairs. The strong similarity between observation and predicted gap and phase structure suggests that this approach may provide a unified description of the complex structure observed for cuprate superconductors.

Yang Sun; Mike Guidry; Cheng-Li Wu

2007-02-21T23:59:59.000Z

444

Observation of a Rotational Band in the Odd-Z Transfermium Nucleus {sub 101}{sup 251}Md  

SciTech Connect (OSTI)

A rotational band has been unambiguously observed in an odd-proton transfermium nucleus for the first time. An in-beam {gamma}-ray spectroscopic study of {sub 101}{sup 251}Md has been performed using the {gamma}-ray array JUROGAM combined with the gas-filled separator RITU and the focal plane device GREAT. The experimental results, compared to Hartree-Fock-Bogolyubov calculations, lead to the interpretation that the rotational band is built on the [521]1/2{sup -} Nilsson state.

Chatillon, A.; Theisen, Ch.; Bouchez, E.; Clement, E.; Goergen, A.; Huerstel, A.; Korten, W.; Le Coz, Y.; Wilson, J. N. [CEA-SACLAY, DSM/DAPNIA/SPhN, F-91191 Gif-sur-Yvette Cedex (France); Butler, P. A.; Herzberg, R.-D.; Jones, G. D. [Oliver Lodge Laboratory, University of Liverpool, L697ZE (United Kingdom); Dorvaux, O.; Gall, B. J. P.; Khalfallah, F.; Rousseau, M. [Institut Pluridisciplinaire Hubert Curien, F-67037 Strasbourg (France); Eeckhaudt, S.; Grahn, T.; Greenlees, P. T.; Jones, P. [Department of Physics, University of Jyvaeskylae, Fin-40500 (Finland)] (and others)

2007-03-30T23:59:59.000Z

445

Shear banding in soft glassy materials  

E-Print Network [OSTI]

Many soft materials, including foams, dense emulsions, micro gel bead suspensions, star polymers, dense packing of surfactant onion micelles, and textured morphologies of liquid crystals, share the basic "glassy" features of structural disorder and metastability. These in turn give rise to several notable features in the low frequency shear rheology (deformation and flow properties) of these materials: in particular, the existence of a yield stress below which the material behaves like a solid, and above which it flows like a liquid. In the last decade, intense experimental activity has also revealed that these materials often display a phenomenon known as shear banding, in which the flow profile across the shear cell exhibits macroscopic bands of different viscosity. Two distinct classes of yield stress fluid have been identified: those in which the shear bands apparently persist permanently (for as long as the flow remains applied), and those in which banding arises only transiently during a process in which a steady flowing state is established out of an initial rest state (for example, in a shear startup or step stress experiment). After surveying the motivating experimental data, we describe recent progress in addressing it theoretically, using the soft glassy rheology model and a simple fluidity model. We also briefly place these theoretical approaches in the context of others in the literature, including elasto-plastic models, shear transformation zone theories, and molecular dynamics simulations. We discuss finally some challenges that remain open to theory and experiment alike.

Suzanne M. Fielding

2014-08-20T23:59:59.000Z

446

Split ring containment attachment device  

DOE Patents [OSTI]

A containment attachment device 10 for operatively connecting a glovebag 200 to plastic sheeting 100 covering hazardous material. The device 10 includes an inner split ring member 20 connected on one end 22 to a middle ring member 30 wherein the free end 21 of the split ring member 20 is inserted through a slit 101 in the plastic sheeting 100 to captively engage a generally circular portion of the plastic sheeting 100. A collar potion 41 having an outer ring portion 42 is provided with fastening means 51 for securing the device 10 together wherein the glovebag 200 is operatively connected to the collar portion 41.

Sammel, Alfred G. (Pittsburgh, PA)

1996-01-01T23:59:59.000Z

447

X-Band Photoinjector Beam Dynamics  

SciTech Connect (OSTI)

SLAC is studying the feasibility of using an X-band RF photocathode gun to produce low emittance bunches for applications such as a mono-energetic MeV {gamma} ray source (in collaboration with LLNL) and a photoinjector for a compact FEL. Beam dynamics studies are being done for a configuration consisting of a 5.5-cell X-band gun followed by several 53-cell high-gradient X-band accelerator structures. A fully 3D program, ImpactT, is used to track particles taking into account space charge forces, short-range longitudinal and transverse wakefields, and the 3D rf fields in the structures, including the quadrupole component of the couplers. The effect of misalignments of the various elements, including the drive-laser, gun, solenoid and accelerator structures, are evaluated. This paper presents these results and estimates of the expected bunch emittance vs cathode gradient, and the effects of mixing between the fundamental and off-frequency longitudinal modes. An X-band gun at SLAC has been shown to operate reliably with a 200 MV/m acceleration gradient at the cathode, which is nearly twice the 115 MV/m acceleration gradient in the LCLS gun. The higher gradient should roughly balance the space charge related transverse emittance growth for the same bunch charge but provide a 3-4 times shorter bunch length. The shorter length would make the subsequent bunch compression easier and allow for a more effective use of emittance exchange. Such a gun can also be used with an X-band linac to produce a compact FEL or g ray source that would require rf sources of only one frequency for beam generation and acceleration. The feasibility of using an X-band rf photocathode gun and accelerator structures to generate high quality electron beams for compact FELs and g ray sources is being studied at SLAC. Results from the X-band photoinjector beam dynamics studies are reported in this paper.

Zhou, Feng; /SLAC; Adolphsen, Chris; /SLAC; Ding, Yuantao; /SLAC; Li, Zenghai; /SLAC; Vlieks, Arnold; /SLAC

2011-12-13T23:59:59.000Z

448

Effects of Out-of-Plane Disorder on the Nodal Quasiparticle and Superconducting Gap in Single-Layer Bi_2Sr_1.6Ln_0.4CuO_6 delta (Ln = La, Nd, Gd)  

SciTech Connect (OSTI)

How out-of-plane disorder affects the electronic structure has been investigated for the single-layer cuprates Bi{sub 2}Sr{sub 1.6}Ln{sub 0.4}CuO{sub 6+{delta}} (Ln = La, Nd, Gd) by angle-resolved photoemission spectroscopy. We have observed that, with increasing disorder, while the Fermi surface shape and band dispersions are not affected, the quasi-particle width increases, the anti-nodal gap is enhanced and the superconducting gap in the nodal region is depressed. The results indicate that the superconductivity is significantly depressed by out-of-plane disorder through the enhancement of the anti-nodal gap and the depression of the superconducting gap in the nodal region.

Hashimoto, M.

2011-01-04T23:59:59.000Z

449

High Temperature, High Voltage Fully Integrated Gate Driver Circuit  

Broader source: Energy.gov (indexed) [DOE]

temperature gate drive is being developed for use with future wide band gap (silicon carbide and gallium nitride) switching devices. * Universal drive that is capable of driving...

450

Plugging of intersubassembly gaps by downward flowing molten steel. [LMFBR  

SciTech Connect (OSTI)

In the assessment of the meltout phase of an LMFBR hypothetical core disruptive accident, a pathway for the escape of molten fuel from the disrupted core is provided by the narrow channels separating adjacent subassemblies. However, the removal of fuel through intersubassembly gaps might be impeded by steel blockage formation, if molten steel is postulated to enter the gap network ahead of disrupted fuel. Reported here are the results of an analysis of the conduction freezing controlled penetration behavior of molten steel flowing downward through the voided (of sodium) gap channels nominally separating adjacent subassemblies below the active core region. The objective is to determine the range of conditions under which the steel is predicted to be deposited as a thin crust on the channel walls leaving an open pathway remaining for subsequent fuel flow instead of forming a complete plug which closes off the gap channel and obstructs fuel removal immediately thereafter.

Sienicki, J.J.; Spencer, B.W.

1984-01-01T23:59:59.000Z

451

Perspective The MAHB, the Culture Gap, and Some Really  

E-Print Network [OSTI]

is a product of population size, per capita consumption, and the sorts of technologies and social and economic systems that supply the consumption. A vast ``culture gap'' has developed over the past century or so

Ford, James

452

Air-gap sacrificial materials by initiated chemical vapor deposition  

E-Print Network [OSTI]

P(neopentyl methacrylate-co-ethylene glycol dimethacrylate) copolymer, abbreviated as P(npMAco-EGDA), was selected as the potential air-gap sacrificial material among possible combination of twenty monomers and four ...

Lee, Long Hua

2007-01-01T23:59:59.000Z

453

Permanent-magnet-less machine having an enclosed air gap  

DOE Patents [OSTI]

A permanent magnet-less, brushless synchronous system includes a stator that generates a magnetic rotating field when sourced by an alternating current. An uncluttered rotor disposed within the magnetic rotating field is spaced apart from the stator to form an air gap relative to an axis of rotation. A stationary excitation core spaced apart from the uncluttered rotor by an axial air gap and a radial air gap substantially encloses the stationary excitation core. Some permanent magnet-less, brushless synchronous systems include stator core gaps to reduce axial flux flow. Some permanent magnet-less, brushless synchronous systems include an uncluttered rotor coupled to outer laminations. The quadrature-axis inductance may be increased in some synchronous systems. Some synchronous systems convert energy such as mechanical energy into electrical energy (e.g., a generator); other synchronous systems may convert any form of energy into mechanical energy (e.g., a motor).

Hsu, John S. (Oak Ridge, TN)

2012-02-07T23:59:59.000Z

454

Proper Sustainability: GAP Grant Proposal Work Plan Strategy Webinar  

Office of Energy Efficiency and Renewable Energy (EERE)

In this webinar I will discuss the new GAP grant requirements for tribal environmental programs and strategies for crafting a work plan that focuses on capacity building activities.  My goal is to...

455

Energy gap of Kronig-Penney-type hydrogenated graphene superlattices  

E-Print Network [OSTI]

The electronic structure of graphene-graphane superlattices with armchair interfaces is investigated with first-principles density-functional theory. By separately varying the widths, we find that the energy gap Eg is ...

Lee, Joo-Hyoung

456

Gap generation and semimetal-insulator phase transition in graphene  

E-Print Network [OSTI]

The gap generation is studied in suspended clean graphene in the continuum model for quasiparticles with the Coulomb interaction. We solve the gap equation with the dynamical polarization function and show that, comparing to the case of the static polarization function, the critical coupling constant lowers to the value \\alpha_c=0.92, which is close to that obtained in lattice Monte Carlo simulations. It is argued that additional short-range four-fermion interactions should be included in the continuum model to account for the lattice simulation results. We obtain the critical line in the plane of electromagnetic and four-fermion coupling constants and find a second order phase transition separating zero gap and gapped phases with critical exponents close to those found in lattice calculations.

O. V. Gamayun; E. V. Gorbar; V. P. Gusynin

2009-12-15T23:59:59.000Z

457

Closing gaps in the human genome using sequencing by synthesis  

E-Print Network [OSTI]

The most recent release of the finished human genome contains 260 euchromatic gaps (excluding chromosome Y). Recent work has helped explain a large number of these unresolved regions as 'structural' in nature. Another class ...

Arachchi, Harindra M.

458

Permanent-magnet-less machine having an enclosed air gap  

DOE Patents [OSTI]

A permanent magnet-less, brushless synchronous system includes a stator that generates a magnetic rotating field when sourced by an alternating current. An uncluttered rotor disposed within the magnetic rotating field is spaced apart from the stator to form an air gap relative to an axis of rotation. A stationary excitation core spaced apart from the uncluttered rotor by an axial air gap and a radial air gap substantially encloses the stationary excitation core. Some permanent magnet-less, brushless synchronous systems include stator core gaps to reduce axial flux flow. Some permanent magnet-less, brushless synchronous systems include an uncluttered rotor coupled to outer laminations. The quadrature-axis inductance may be increased in some synchronous systems. Some synchronous systems convert energy such as mechanical energy into electrical energy (e.g., a generator); other synchronous systems may convert any form of energy into mechanical energy (e.g., a motor).

Hsu, John S.

2013-03-05T23:59:59.000Z

459

Optical and optoelectronic fiber devices  

E-Print Network [OSTI]

The ability to integrate materials with disparate electrical, thermal, and optical properties into a single fiber structure enabled the realization of fiber devices with diverse and complex functionalities. Amongst those, ...

Shapira, Ofer, Ph. D. Massachusetts Institute of Technology

2007-01-01T23:59:59.000Z

460

Polymer electronic devices and materials.  

SciTech Connect (OSTI)

Polymer electronic devices and materials have vast potential for future microsystems and could have many advantages over conventional inorganic semiconductor based systems, including ease of manufacturing, cost, weight, flexibility, and the ability to integrate a wide variety of functions on a single platform. Starting materials and substrates are relatively inexpensive and amenable to mass manufacturing methods. This project attempted to plant the seeds for a new core competency in polymer electronics at Sandia National Laboratories. As part of this effort a wide variety of polymer components and devices, ranging from simple resistors to infrared sensitive devices, were fabricated and characterized. Ink jet printing capabilities were established. In addition to promising results on prototype devices the project highlighted the directions where future investments must be made to establish a viable polymer electronics competency.

Schubert, William Kent; Baca, Paul Martin; Dirk, Shawn M.; Anderson, G. Ronald; Wheeler, David Roger

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Personal cooling air filtering device  

DOE Patents [OSTI]

A temperature modification system for modifying the temperature of fluids includes at least one thermally conductive carbon foam element, the carbon foam element having at least one flow channel for the passage of fluids. At least one temperature modification device is provided, the temperature modification device thermally connected to the carbon foam element and adapted to modify the temperature of the carbon foam to modify the temperature of fluids flowing through the flow channels. Thermoelectric and/or thermoionic elements can preferably be used as the temperature modification device. A method for the reversible temperature modification of fluids includes the steps of providing a temperature modification system including at least one thermally conductive carbon foam element having flow channels and at least one temperature modification device, and flowing a fluid through the flow channels.

Klett, James (Knoxville, TN); Conway, Bret (Denver, NC)

2002-08-13T23:59:59.000Z

462

Devices for collecting chemical compounds  

DOE Patents [OSTI]

A device for sampling chemical compounds from fixed surfaces and related methods are disclosed. The device may include a vacuum source, a chamber and a sorbent material. The device may utilize vacuum extraction to volatilize the chemical compounds from a fixed surface so that they may be sorbed by the sorbent material. The sorbent material may then be analyzed using conventional thermal desorption/gas chromatography/mass spectrometry (TD/GC/MS) instrumentation to determine presence of the chemical compounds. The methods may include detecting release and presence of one or more chemical compounds and determining the efficacy of decontamination. The device may be useful in collection and analysis of a variety of chemical compounds, such as residual chemical warfare agents, chemical attribution signatures and toxic industrial chemicals.

Scott, Jill R; Groenewold, Gary S

2013-12-24T23:59:59.000Z

463

Device-transparent personal storage  

E-Print Network [OSTI]

Users increasingly store data collections such as digital photographs on multiple personal devices, each of which typically presents the user with a storage management interface isolated from the contents of all other ...

Strauss, Jacob A. (Jacob Alo), 1979-

2010-01-01T23:59:59.000Z

464

NOVEL CHAMBER DESIGN FOR AN IN-VACUUM CRYO-COOLED MINI-GAP UNDULATOR.  

SciTech Connect (OSTI)

A stainless steel, Ultra-High Vacuum (UHV) chamber, featuring a large vertical rectangular port (53''W by 16''H), has been fabricated to house the one-meter magnet assembly of a newly installed undulator insertion device for beamline X-25 at the National Synchrotron Light Source. To achieve UHV, the new chamber is equipped with a differential ion pump, NEG pump, nude ion gauge, residual gas analyzer, and an all metal roughing valve. Temperature of the magnet assembly is maintained below 90 C during vacuum bake. The large rectangular port cover is sealed to the main flange of the chamber using a one-piece flat aluminum gasket and special sealing surfaces developed exclusively by Nor-Cal Products, Inc. The large flange provides easy access to the gap of the installed magnet girders for in situ magnetic measurements and shimming. Special window ports were designed into the cover and chamber for manipulation of optical micrometers external to the chamber to provide precise measurements of the in-vacuum magnet gap. The vacuum chamber assembly features independently vacuum-isolated feedthroughs that can be used for either water-or-cryogenic refrigeration-cooling of the monolithic magnet girders. This would allow for cryogenic-cooled permanent magnet operation and has been successfully tested within temperature range of +100 C to -150 C. Details of the undulator assembly for beamline X-25 is described in the paper.

HU, J.-P.; FOERSTER, C.L.; SKARITKA, J.R.; WATERMAN, D.

2006-05-24T23:59:59.000Z

465

Excitonic gap, phase transition, and quantum Hall effect in graphene  

E-Print Network [OSTI]

We suggest that physics underlying the recently observed removal of sublattice and spin degeneracies in graphene in a strong magnetic field describes a phase transition connected with the generation of an excitonic gap. The experimental form of the Hall conductivity is reproduced and the main characteristics of the dynamics are described. Predictions of the behavior of the gap as a function of temperature and a gate voltage are made.

V. P. Gusynin; V. A. Miransky; S. G. Sharapov; I. A. Shovkovy

2006-11-23T23:59:59.000Z

466

Piezo-phototronic effect devices  

DOE Patents [OSTI]

A semiconducting device includes a piezoelectric structure that has a first end and an opposite second end. A first conductor is in electrical communication with the first end and a second conductor is in electrical communication with the second end so as to form an interface therebetween. A force applying structure is configured to maintain an amount of strain in the piezoelectric member sufficient to generate a desired electrical characteristic in the semiconducting device.

Wang, Zhong L.; Yang, Qing

2013-09-10T23:59:59.000Z

467

Lih thermal energy storage device  

DOE Patents [OSTI]

A thermal energy storage device for use in a pulsed power supply to store waste heat produced in a high-power burst operation utilizes lithium hydride as the phase change thermal energy storage material. The device includes an outer container encapsulating the lithium hydride and an inner container supporting a hydrogen sorbing sponge material such as activated carbon. The inner container is in communication with the interior of the outer container to receive hydrogen dissociated from the lithium hydride at elevated temperatures.

Olszewski, Mitchell (Knoxville, TN); Morris, David G. (Knoxville, TN)

1994-01-01T23:59:59.000Z

468

Wireless device monitoring methods, wireless device monitoring systems, and articles of manufacture  

DOE Patents [OSTI]

Wireless device monitoring methods, wireless device monitoring systems, and articles of manufacture are described. According to one embodiment, a wireless device monitoring method includes accessing device configuration information of a wireless device present at a secure area, wherein the device configuration information comprises information regarding a configuration of the wireless device, accessing stored information corresponding to the wireless device, wherein the stored information comprises information regarding the configuration of the wireless device, comparing the device configuration information with the stored information, and indicating the wireless device as one of authorized and unauthorized for presence at the secure area using the comparing.

McCown, Steven H. (Rigby, ID); Derr, Kurt W. (Idaho Falls, ID); Rohde, Kenneth W. (Idaho Falls, ID)

2012-05-08T23:59:59.000Z

469

"Develop enabling optoelectronic devices for broadband  

E-Print Network [OSTI]

"Develop enabling optoelectronic devices for broadband communications and photonic systems Group Our group focuses on optoelectronic devices and photonic integrated circuits to photodiodes with the highest linearity and output power to date. High-Speed Optoelectronic Devices Driven

Acton, Scott

470

SLAC All Access: Vacuum Microwave Device Department  

ScienceCinema (OSTI)

The Vacuum Microwave Device Department (VMDD) builds the devices that make SLAC's particle accelerators go. These devices, called klystrons, generate intense waves of microwave energy that rocket subatomic particles up to nearly the speed of light.

Haase, Andy

2014-06-13T23:59:59.000Z

471

MDCF Tutorial Device Interface and App Development  

E-Print Network [OSTI]

-generated Device Interface (ICE Device Model) Vision: IDE for Driver Development & Validation Vision: IntegratedMDCF Tutorial Device Interface and App Development Acknowledgements: Funding provided by US National Science Foundation awards 0734204, 0930647 Clinical documentation and hardware provided by CIMIT

Huth, Michael

472

Hydrogeologic Model for the Gable Gap Area, Hanford Site  

SciTech Connect (OSTI)

Gable Gap is a structural and topographic depression between Gable Mountain and Gable Butte within the central Hanford Site. It has a long and complex geologic history, which includes tectonic uplift synchronous with erosional downcutting associated with the ancestral Columbia River during both Ringold and Cold Creek periods, and by the later Ice Age (mostly glacial Lake Missoula) floods. The gap was subsequently buried and partially backfilled by mostly coarse-grained, Ice Age flood deposits (Hanford formation). Erosional remnants of both the Ringold Formation and Cold Creek unit locally underlie the high-energy flood deposits. A large window exists in the gap where confined basalt aquifers are in contact with the unconfined suprabasalt aquifer. Several paleochannels, of both Hanford and Ringold Formation age, were eroded into the basalt bedrock across Gable Gap. Groundwater from the Central Plateau presently moves through Gable Gap via one or more of these shallow paleochannels. As groundwater levels continue to decline in the region, groundwater flow may eventually be cut off through Gable Gap.

Bjornstad, Bruce N.; Thorne, Paul D.; Williams, Bruce A.; Last, George V.; Thomas, Gregory S.; Thompson, Michael D.; Ludwig, Jami L.; Lanigan, David C.

2010-09-30T23:59:59.000Z

473

Quantum-Dot Intermediate-Band Solar Cells with Inverted Band Alignment  

SciTech Connect (OSTI)

The intermediate-band concept was proposed over a decade ago as a possible route to increase the efficiency of single-junction solar cells. Despite a number of experimental attempts to realize this concept, no efficiency improvement over conventional single-junction solar cells has so far been demonstrated. This is likely due to the fact that the intermediate band itself acts to enhance electron-hole recombination. In this work we propose a novel intermediate-band solar-cell architecture based on doped semiconductor nanostructures having an inverted type-I band alignment with the surrounding host. The recombination of carriers in the nanostructures is prevented by ultra-fast charge transfer to the host, thereby removing the main obstacle to achieve high conversion efficiency.

Francheschetti, A.; Lany, S.; Bester, G.

2008-01-01T23:59:59.000Z

474

Investigating the book-tax income gap : factors which affect the gap and details regarding its most significant component  

E-Print Network [OSTI]

(cont.) In total, my thesis suggests that recent changes in the book-tax income gap may be exogenous and transitory, due to changes to the calculation of book income, general business conditions or other factors which ...

Seidman, Jeri

2008-01-01T23:59:59.000Z

475

DISSERTATION DEVICE CHARACTERIZATION OF CADMIUM TELLURIDE PHOTOVOLTAICS  

E-Print Network [OSTI]

DISSERTATION DEVICE CHARACTERIZATION OF CADMIUM TELLURIDE PHOTOVOLTAICS Submitted by Russell M Reserved #12;ABSTRACT DEVICE CHARACTERIZATION OF CADMIUM TELLURIDE PHOTOVOLTAICS Thin-film photovoltaics

Sites, James R.

476

X-Band RF Gun Development  

SciTech Connect (OSTI)

In support of the MEGa-ray program at LLNL and the High Gradient research program at SLAC, a new X-band multi-cell RF gun is being developed. This gun, similar to earlier guns developed at SLAC for Compton X-ray source program, will be a standing wave structure made of 5.5 cells operating in the pi mode with copper cathode. This gun was designed following criteria used to build SLAC X-band high gradient accelerating structures. It is anticipated that this gun will operate with surface electric fields on the cathode of 200 MeV/m with low breakdown rate. RF will be coupled into the structure through a final cell with symmetric duel feeds and with a shape optimized to minimize quadrupole field components. In addition, geometry changes to the original gun, operated with Compton X-ray source, will include a wider RF mode separation, reduced surface electric and magnetic fields.

Vlieks, Arnold; Dolgashev, Valery; Tantawi, Sami; /SLAC; Anderson, Scott; Hartemann, Fred; Marsh, Roark; /LLNL, Livermore

2012-06-22T23:59:59.000Z

477

Permanent magnet focused X-band photoinjector  

DOE Patents [OSTI]

A compact high energy photoelectron injector integrates the photocathode directly into a multicell linear accelerator with no drift space between the injection and the linac. High electron beam brightness is achieved by accelerating a tightly focused electron beam in an integrated, multi-cell, X-band rf linear accelerator (linac). The photoelectron linac employs a Plane-Wave-Transformer (PWT) design which provides strong cell-to-cell coupling, easing manufacturing tolerances and costs.

Yu, David U. L. (Rancho Palos Verdes, CA); Rosenzweig, James (Los Angeles, CA)

2002-09-10T23:59:59.000Z

478

Influence of gap spacing on the characteristics of Trichel pulse generated in point-to-plane discharge gaps  

SciTech Connect (OSTI)

In this paper, the specific characteristics of the Trichel pulse generated in wide point-to-plane discharge gaps are investigated and compared with those of the currents generated in narrow gaps. A set of empirical formulas are derived to describe the specific characteristics. The influence of the gap spacing both on the current characteristics and on the coefficients of the formulas is studied. Based on the experiment results, an improvement is made to the space charge calculation method proposed by Lama and Gallo [J. Appl. Phys. 45, 103–113 (1974)] and the calculation results are compared to the ones obtained with Lama and Gallo's original method. With the influence of the space charge considered, the modified method obtains more accurate results of the space charge accumulating in the gap and gives a more precise description of the motion of the space charge in the gap. Based on the calculation results, the influence of the space charge on the distribution of the electric field is examined and the influence of the gap spacing on the current characteristics is also studied.

Li, Zhen, E-mail: leezhen1988@gmail.com; Zhang, Bo, E-mail: shizbcn@mail.tsinghua.edu.cn; He, Jinliang, E-mail: hejl@tsinghua.edu.cn; Xu, Yongsheng, E-mail: evebus@163.com [State Key Laboratory of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084 (China)] [State Key Laboratory of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084 (China)

2014-01-15T23:59:59.000Z

479

Semiconductor-based, large-area, flexible, electronic devices  

SciTech Connect (OSTI)

Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Goyal, Amit (Knoxville, TN)

2011-03-15T23:59:59.000Z

480

The Negative Parity Bands in $^{156}$Gd  

E-Print Network [OSTI]

The high flux reactor of the Institut Laue-Langevin is the world most intense neutron source for research. Using the ultra high-resolution crystal spectrometers GAMS installed at the in-pile target position H6/H7 it is possible to measure nuclear state lifetimes using the Gamma Ray Induced Recoil (GRID) technique. In bent crystal mode, the spectrometers allow to perform spectroscopy with a dynamic range of up to six orders magnitude. At a very well collimated external neutron beam it is possible to install a highly efficient germanium detector array to obtain coincidences and angular correlations. The mentioned techniques were used to study the first two negative parity bands in $^{156}$Gd. These bands have been in the focus of interest since they seem to show signatures of a tetrahedral symmetry. A surprisingly high B(E2) value of about 1000 W.u. for the $4^- \\rightarrow 2^-$ transition was discovered. It indicates that the two first negative parity bands cannot be considered to be signature partners.

Michael Jentschel; Loic Sengele; Dominique Curien; Jerzy Dudek; Florent Haas

2014-04-23T23:59:59.000Z

Note: This page contains sample records for the topic "band gap devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Aerosol can waste disposal device  

DOE Patents [OSTI]

Disclosed is a device for removing gases and liquid from containers. The device punctures the bottom of a container for purposes of exhausting gases and liquid from the container without their escaping into the atmosphere. The device includes an inner cup or cylinder having a top portion with an open end for receiving a container and a bottom portion which may be fastened to a disposal or waste container in a substantially leak-proof manner. A piercing device is mounted in the lower portion of the inner cylinder for puncturing the can bottom placed in the inner cylinder. An outer cylinder having an open end and a closed end fits over the top portion of the inner cylinder in telescoping engagement. A force exerted on the closed end of the outer cylinder urges the bottom of a can in the inner cylinder into engagement with the piercing device in the bottom of the inner cylinder to form an opening in the can bottom, thereby permitting the contents of the can to enter the disposal container. 7 figures.

O'Brien, M.D.; Klapperick, R.L.; Bell, C.

1993-12-21T23:59:59.000Z

482

Radiation-tolerant imaging device  

DOE Patents [OSTI]

A barrier at a uniform depth for an entire wafer is used to produce imaging devices less susceptible to noise pulses produced by the passage of ionizing radiation. The barrier prevents charge created in the bulk silicon of a CCD detector or a semiconductor logic or memory device from entering the collection volume of each pixel in the imaging device. The charge barrier is a physical barrier, a potential barrier, or a combination of both. The physical barrier is formed by an SiO{sub 2} insulator. The potential barrier is formed by increasing the concentration of majority carriers (holes) to combine with the electron`s generated by the ionizing radiation. A manufacturer of CCD imaging devices can produce radiation-tolerant devices by merely changing the wafer type fed into his process stream from a standard wafer to one possessing a barrier beneath its surface, thus introducing a very small added cost to his production cost. An effective barrier type is an SiO{sub 2} layer. 7 figs.

Colella, N.J.; Kimbrough, J.R.

1996-11-19T23:59:59.000Z

483

Solar-blind deep-UV band-pass filter (250 -350 nm) consisting of a metal nano-grid fabricated  

E-Print Network [OSTI]

Solar-blind deep-UV band-pass filter (250 - 350 nm) consisting of a metal nano-grid fabricated, fabricated and demonstrated a solar-blind deep-UV pass filter, that has a measured optical performance, the filter offers simple yet effective and low cost solar-blind deep-UV detection at either a single device

484

Antimony Based III-V Thermophotovoltaic Devices  

SciTech Connect (OSTI)

Antimony-based III-V thermophotovoltaic (TPV) cells are attractive converters for systems with low radiator temperature around 1100 to 1700 K, since these cells potentially can be spectrally matched to the thermal source. Cells under development include GaSb and the lattice-matched GaInAsSb/GaSb and InPAsSb/InAs quaternary systems. GaSb cell technology is the most mature, owing in part to the relative ease in preparation of the binary alloy compared to quaternary GaInAsSb and InPAsSb alloys. Device performance of 0.7-eV GaSb cells exceeds 90% of the practical limit. GaInAsSb TPV cells have been the primary focus of recent research, and cells with energy gap E{sub g} ranging from {approx}0.6 to 0.49 eV have been demonstrated. Quantum efficiency and fill factor approach theoretical limits. Open-circuit voltage factor is as high as 87% of the practical limit for the higher-E{sub g} cells, but degrades to below 80% with decreasing E{sub g} of the alloy, which might be due to Auger recombination. InPAsSb cells are the least studied, and a cell with E{sub g} = 0.45-eV has extended spectral response out to 4.3 {micro}m. This paper briefly reviews the main contributions that have been made for antimonide-based TPV cells, and suggests additional studies for further performance enhancements.

CA Wang

2004-06-09T23:59:59.000Z

485

Bad data packet capture device  

DOE Patents [OSTI]

An apparatus and method for capturing data packets for analysis on a network computing system includes a sending node and a receiving node connected by a bi-directional communication link. The sending node sends a data transmission to the receiving node on the bi-directional communication link, and the receiving node receives the data transmission and verifies the data transmission to determine valid data and invalid data and verify retransmissions of invalid data as corresponding valid data. A memory device communicates with the receiving node for storing the invalid data and the corresponding valid data. A computing node communicates with the memory device and receives and performs an analysis of the invalid data and the corresponding valid data received from the memory device.

Chen, Dong; Gara, Alan; Heidelberger, Philip; Vranas, Pavlos

2010-04-20T23:59:59.000Z

486

Microelectroporation device for genomic screening  

DOE Patents [OSTI]

We have developed an microelectroporation device that combines microarrays of oligonucleotides, microfluidic channels, and electroporation for cell transfection and high-throughput screening applications (e.g. RNA interference screens). Microarrays allow the deposition of thousands of different oligonucleotides in microscopic spots. Microfluidic channels and microwells enable efficient loading of cells into the device and prevent cross-contamination between different oligonucleotides spots. Electroporation allows optimal transfection of nucleic acids into cells (especially hard-to-transfect cells such as primary cells) by minimizing cell death while maximizing transfection efficiency. This invention has the advantage of a higher throughput and lower cost, while preventing cross-contamination compared to conventional screening technologies. Moreover, this device does not require bulky robotic liquid handling equipment and is inherently safer given that it is a closed system.

Perroud, Thomas D.; Renzi, Ronald F.; Negrete, Oscar; Claudnic, Mark R.

2014-09-09T23:59:59.000Z

487

Device Independent Random Number Generation  

E-Print Network [OSTI]

Randomness is an invaluable resource in today's life with a broad use reaching from numerical simulations through randomized algorithms to cryptography. However, on the classical level no true randomness is available and even the use of simple quantum devices in a prepare-measure setting suffers from lack of stability and controllability. This gave rise to a group of quantum protocols that provide randomness certified by classical statistical tests -- Device Independent Quantum Random Number Generators. In this paper we review the most relevant results in this field, which allow the production of almost perfect randomness with help of quantum devices, supplemented with an arbitrary weak source of additional randomness. This is in fact the best one could hope for to achieve, as with no starting randomness (corresponding to no free will in a different concept) even a quantum world would have a fully deterministic description.

Mataj Pivoluska; Martin Plesch

2015-02-23T23:59:59.000Z

488

Potential “ways of thinking” about the shear-banding phenomenon  

E-Print Network [OSTI]

Shear-banding is a curious but ubiquitous phenomenon occurring in soft matter. The phenomenological similarities between the shear-banding transition and phase transitions has pushed some researchers to adopt a ‘thermodynamical’ ...

Fardin, M. A.

489

Gap formation and stability in non-isothermal protoplanetary discs  

E-Print Network [OSTI]

Several observations of transition discs show lopsided dust-distributions. A potential explanation is the formation of a large-scale vortex acting as a dust-trap at the edge of a gap opened by a giant planet. Numerical models of gap-edge vortices have thus far employed locally isothermal discs, but the theory of this vortex-forming or `Rossby wave' instability was originally developed for adiabatic discs. We generalise the study of planetary gap stability to non-isothermal discs using customised numerical simulations of disc-planet systems where the planet opens an unstable gap. We include in the energy equation a simple cooling function with cooling timescale $t_c=\\beta\\Omega_k^{-1}$, where $\\Omega_k$ is the Keplerian frequency, and examine the effect of $\\beta$ on the stability of gap edges and vortex lifetimes. We find increasing $\\beta$ lowers the growth rate of non-axisymmetric perturbations, and the dominant azimuthal wavenumber $m$ decreases. We find a quasi-steady state consisting of one large-scale, ...

Les, Robert

2015-01-01T23:59:59.000Z

490

CV evolution: AM Her binaries and the period gap  

E-Print Network [OSTI]

AM Her variables -- synchronised magnetic cataclysmic variables (CVs) -- exhibit a different period distribution from other CVs across the period gap. We show that non-AM Her systems may infiltrate the longer-period end of the period gap if they are metal-deficient, but that the position and width of the gap in orbital period is otherwise insensitive to other binary parameters (excepting the normalisation of the braking rate). In AM Her binaries, magnetic braking is reduced as the wind from the secondary star may be trapped within the magnetosphere of the white dwarf primary. This reduced braking fills the period gap from its short-period end as the dipole magnetic moment of the white dwarf increases. The consistency of these models with the observed distribution of CVs, both AM Her and non-AM Her type, provides compelling evidence supporting magnetic braking as the agent of angular momentum loss among long-period CVs, and its disruption as the explanation of the 2 - 3 hour period gap among nonmagnetic CVs.

R. F. Webbink; D. T. Wickramasinghe

2002-04-19T23:59:59.000Z

491

Metamaterials for terahertz polarimetric devices  

SciTech Connect (OSTI)

We present experimental and numerical investigations of planar terahertz metamaterial structures designed to interact with the state of polarization. The dependence of metamaterial resonances on polarization results in unique amplitude and phase characteristics of the terahertz transmission, providing the basis for polarimetric terahertz devices. We highlight some potential applications for polarimetric devices and present simulations of a terahertz quarter-wave plate and a polarizing terahertz beam splitter. Although this work was performed at terahertz frequencies, it may find applications in other frequency ranges as well.

O'hara, John F [Los Alamos National Laboratory; Taylor, Antoinette J [Los Alamos National Laboratory; Smirnova, Evgenya [Los Alamos National Laboratory; Azad, Abul [Los Alamos National Laboratory

2008-01-01T23:59:59.000Z

492

Beta ray flux measuring device  

DOE Patents [OSTI]

A beta ray flux measuring device in an activated member in-core instrumentation system for pressurized water reactors. The device includes collector rings positioned about an axis in the reactor's pressure boundary. Activated members such as hydroballs are positioned within respective ones of the collector rings. A response characteristic such as the current from or charge on a collector ring indicates the beta ray flux from the corresponding hydroball and is therefore a measure of the relative nuclear power level in the region of the reactor core corresponding to the specific exposed hydroball within the collector ring.

Impink, Jr., Albert J. (Murrysville, PA); Goldstein, Norman P. (Murrysville, PA)

1990-01-01T23:59:59.000Z

493

Surface-micromachined microfluidic devices  

DOE Patents [OSTI]

Microfluidic devices are disclosed which can be manufactured using surface-micromachining. These devices utilize an electroosmotic force or an electromagnetic field to generate a flow of a fluid in a microchannel that is lined, at least in part, with silicon nitride. Additional electrodes can be provided within or about the microchannel for separating particular constituents in the fluid during the flow based on charge state or magnetic moment. The fluid can also be pressurized in the channel. The present invention has many different applications including electrokinetic pumping, chemical and biochemical analysis (e.g. based on electrophoresis or chromatography), conducting chemical reactions on a microscopic scale, and forming hydraulic actuators.

Galambos, Paul C. (Albuquerque, NM); Okandan, Murat (Albuquerque, NM); Montague, Stephen (Albuquerque, NM); Smith, James H. (Redmond, WA); Paul, Phillip H. (Livermore, CA); Krygowski, Thomas W. (Cortlandt Manor, NY); Allen, James J. (Albuquerque, NM); Nichols, Christopher A. (Hauppauge, NY); Jakubczak, II, Jerome F. (Rio Rancho, NM)

2003-01-01T23:59:59.000Z

494

Inertial impaction air sampling device  

DOE Patents [OSTI]

An inertial impactor is designed which is to be used in an air sampling device for collection of respirable size particles in ambient air. The device may include a graphite furnace as the impaction substrate in a small-size, portable, direct analysis structure that gives immediate results and is totally self-contained allowing for remote and/or personal sampling. The graphite furnace collects suspended particles transported through the housing by means of the air flow system, and these particles may be analyzed for elements, quantitatively and qualitatively, by atomic absorption spectrophotometry. 3 figs.

Dewhurst, K.H.

1990-05-22T23:59:59.000Z

495

Gas sensing with acoustic devices  

SciTech Connect (OSTI)

A survey is made of acoustic devices that are suitable as gas and vapor sensors. This survey focuses on attributes such as operating frequency, mass sensitivity, quality factor (Q), and their ability to be fabricated on a semiconductor substrate to allow integration with electronic circuitry. The treatment of the device surface with chemically-sensitive films to detect species of interest is discussed. Strategies for improving discrimination are described, including sensor arrays and species concentration and separation schemes. The advantages and disadvantages of integrating sensors with microelectronics are considered, along with the effect on sensitivity of scaling acoustic gas sensors to smaller size.

Martin, S.J.; Frye, G.C. [Sandia National Labs., Albuquerque, NM (United States); Spates, J.J. [Ktech Corp., Albuquerque, NM (United States); Butler, M.A. [Sandia National Labs., Albuquerque, NM (United States)

1996-12-31T23:59:59.000Z

496

Quebec Recovery of White-Fronted Goose Banded in Greenland  

E-Print Network [OSTI]

O. H. Hewitt Journal:  Bird Banding Volume:  19 Issue:  3 (July) Section:  General Notes Year:  1948 Pages:  124

497

Arctic Tern Banded in Greenland, Recovered in Ontario  

E-Print Network [OSTI]

T. M. Shortt Journal:  Bird Banding Volume:  20 Issue:  1 (January) Section:  General Notes Year:  1949 Pages:  50

498

Implantable biomedical devices on bioresorbable substrates  

DOE Patents [OSTI]

Provided herein are implantable biomedical devices, methods of administering implantable biomedical devices, methods of making implantable biomedical devices, and methods of using implantable biomedical devices to actuate a target tissue or sense a parameter associated with the target tissue in a biological environment. Each implantable biomedical device comprises a bioresorbable substrate, an electronic device having a plurality of inorganic semiconductor components supported by the bioresorbable substrate, and a barrier layer encapsulating at least a portion of the inorganic semiconductor components. Upon contact with a biological environment the bioresorbable substrate is at least partially resorbed, thereby establishing conformal contact between the implantable biomedical device and the target tissue in the biological environment.

Rogers, John A; Kim, Dae-Hyeong; Omenetto, Fiorenzo; Kaplan, David L; Litt, Brian; Viventi, Jonathan; Huang, Yonggang; Amsden, Jason

2014-03-04T23:59:59.000Z

499

Excitation of Banded Whistler Waves in the Magnetosphere  

SciTech Connect (OSTI)

Banded whistler waves can be generated by the whistler anisotropy instability driven by two bi-Maxwellian electron components with T{sub {perpendicular}}/T{sub {parallel}} > 1 at different T{sub {parallel}} For typical magnetospheric condition of 1 < {omega}{sub e}/{Omega}{sub e} < 5 in regions associated with strong chorus, upper-band waves can be excited by anisotropic electrons below {approx} 1 keV, while lower-band waves are excited by anisotropic electrons above {approx} 10 keV. Lower-band waves are generally field-aligned and substantially electromagnetic, while upper-band waves propagate obliquely and have quasi-electrostatic fluctuating electric fields. The quasi-electrostatic feature of upper-band waves suggests that they may be more easily identified in electric field observations than in magnetic field observations. Upper-band waves are liable to Landau damping and the saturation level of upperband waves is lower than lower-band waves, consistent with observations that lower-band waves are stronger than upper-band waves on average. The oblique propagation, the lower saturation level, and the more severe Landau damping together would make upper-band waves more tightly confined to the geomagnetic equator (|{lambda}{sub m}| < {approx}10{sup o}) than lower-band waves.

Gary, S. Peter [Los Alamos National Laboratory; Liu, Kaijun [Los Alamos National Laboratory; Winske, Dan [Los Alamos National Laboratory

2012-07-13T23:59:59.000Z

500

Anisotropy of strong pinning in multi-band superconductors  

E-Print Network [OSTI]

pinning in multi-band superconductors 2 1. Introduction The multi-band nature of superconductivity in iron the anisotropy of superconducting parameters in the iron-based superconductors. In particular, Kidzun et al. [23Anisotropy of strong pinning in multi-band superconductors C.J. van der Beek, M. Konczykowski

Boyer, Edmond