National Library of Energy BETA

Sample records for autostart buffer overflows

  1. V-182: Symantec Endpoint Protection Manager Buffer Overflow Vulnerabil...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    2: Symantec Endpoint Protection Manager Buffer Overflow Vulnerability V-182: Symantec Endpoint Protection Manager Buffer Overflow Vulnerability June 20, 2013 - 6:00am Addthis...

  2. T-626: Xen Multiple Buffer Overflow and Integer Overflow Vulnerabilities

    Broader source: Energy.gov [DOE]

    It was found that the xc_try_bzip2_decode() and xc_try_lzma_decode() decode routines did not correctly check for a possible buffer size overflow in the decoding loop. As well, several integer overflow flaws and missing error/range checking were found that could lead to an infinite loop. A privileged guest user could use these flaws to crash the guest or, possibly, execute arbitrary code in the privileged management domain (Dom0). (CVE-2011-1583)

  3. V-182: Symantec Endpoint Protection Manager Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    Symantec was notified of a pre-authentication buffer overflow found in the Symantec Endpoint Protection Manager (SEPM) and Symantec Endpoint Protection Center (SPC)

  4. V-219: Kingsoft Writer 2012 WPS Font Names Buffer Overflow Vulnerabili...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    9: Kingsoft Writer 2012 WPS Font Names Buffer Overflow Vulnerability V-219: Kingsoft Writer 2012 WPS Font Names Buffer Overflow Vulnerability August 16, 2013 - 5:52am Addthis...

  5. U-056: Linux Kernel HFS Buffer Overflow Lets Local Users Gain...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Linux Kernel HFS Buffer Overflow Lets Local Users Gain Root Privileges U-056: Linux Kernel HFS Buffer Overflow Lets Local Users Gain Root Privileges December 9, 2011 - 8:00am...

  6. V-228: RealPlayer Buffer Overflow and Memory Corruption Error...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    V-228: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote Users Execute ... Lets Remote Users Execute Arbitrary Code V-049: RealPlayer Buffer Overflow and Invalid ...

  7. U-154: IBM Rational ClearQuest ActiveX Control Buffer Overflow...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    54: IBM Rational ClearQuest ActiveX Control Buffer Overflow Vulnerability U-154: IBM Rational ClearQuest ActiveX Control Buffer Overflow Vulnerability April 24, 2012 - 7:00am ...

  8. T-695: Avaya Aura Application Server Buffer Overflow in 'cstore.exe' Lets Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    Avaya Aura Application Server Buffer Overflow in 'cstore.exe' Lets Remote Users Execute Arbitrary Code.

  9. T-548: Novell ZENworks Handheld Management (ZHM) ZfHIPCnd.exe buffer overflow

    Broader source: Energy.gov [DOE]

    Novell ZENworks Handheld Management (ZHM) is vulnerable to a heap-based buffer overflow, caused by improper bounds checking by the ZfHIPCnd.exe Access Point process. By sending a specially-crafted request to TCP port 2400, a remote attacker could overflow a buffer and execute arbitrary code on the system with SYSTEM privileges or cause the application to crash.

  10. U-154: IBM Rational ClearQuest ActiveX Control Buffer Overflow

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Vulnerability | Department of Energy 54: IBM Rational ClearQuest ActiveX Control Buffer Overflow Vulnerability U-154: IBM Rational ClearQuest ActiveX Control Buffer Overflow Vulnerability April 24, 2012 - 7:00am Addthis PROBLEM: IBM Rational ClearQuest ActiveX Control Buffer Overflow Vulnerability PLATFORM: Versions 7.1.1 through 7.1.2.5, 8.0, and 8.0.0.1. ABSTRACT: A vulnerability was reported in IBM Rational ClearQuest. A remote user can cause arbitrary code to be executed on the target

  11. V-049: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Execute Arbitrary Code | Department of Energy 9: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users Execute Arbitrary Code V-049: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users Execute Arbitrary Code December 18, 2012 - 1:30am Addthis PROBLEM: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users Execute Arbitrary Code PLATFORM: Windows RealPlayer 15.0.6.14 and prior. ABSTRACT: Two vulnerabilities were reported in RealPlayer. REFERENCE

  12. V-114: RealPlayer MP4 Processing Buffer Overflow Vulnerability | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy 14: RealPlayer MP4 Processing Buffer Overflow Vulnerability V-114: RealPlayer MP4 Processing Buffer Overflow Vulnerability March 19, 2013 - 12:01am Addthis PROBLEM: RealPlayer MP4 Processing Buffer Overflow Vulnerability PLATFORM: Versions prior to 16.0.1.18. ABSTRACT: A vulnerability has been reported in RealPlayer REFERENCE LINKS: RealNetworks, Inc Secunia Advisory SA52692 CVE-2013-1750 IMPACT ASSESSMENT: High DISCUSSION: The vulnerability is caused due to an error when

  13. V-093: Symantec PGP Desktop Buffer Overflows Let Local Users...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Secure Mobility Client Heap Overflow Lets Local Users Gain Elevated Privileges V-066: Adobe AcrobatReader Multiple Flaws Lets Remote Users Execute Arbitrary Code and Local Users...

  14. V-086: IntegraXor ActiveX Control Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    The vulnerability is caused due to an error in the PE3DO32A.ocx ActiveX control and can be exploited to cause a buffer overflow.

  15. V-049: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    V-049: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users Execute ... The vendor has issued a fix (16.0.0.282). Addthis Related Articles V-228: RealPlayer ...

  16. U-115: Novell GroupWise Client Address Book Processing Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    The vulnerability is caused due to an error when processing Novell Address Book (".nab") files and can be exploited to cause a heap-based buffer overflow via an overly long email address.

  17. T-583: Linux Kernel OSF Partition Table Buffer Overflow Lets Local Users Obtain Information

    Broader source: Energy.gov [DOE]

    A local user can create a storage device with specially crafted OSF partition tables. When the kernel automatically evaluates the partition tables, a buffer overflow may occur and data from kernel heap space may leak to user-space.

  18. V-228: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Users Execute Arbitrary Code | Department of Energy 8: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote Users Execute Arbitrary Code V-228: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote Users Execute Arbitrary Code August 27, 2013 - 6:00am Addthis PROBLEM: Two vulnerabilities were reported in RealPlayer PLATFORM: RealPlayer 16.0.2.32 and prior ABSTRACT: A remote user can cause arbitrary code to be executed on the target user's system REFERENCE LINKS:

  19. T-527: OpenSC Smart Card Serial Number Multiple Buffer Overflow Vulnerabilities

    Broader source: Energy.gov [DOE]

    OpenSC is prone to multiple buffer-overflow vulnerabilities because the application fails to perform adequate boundary checks on user-supplied input. Attackers may leverage these issues to execute arbitrary code in the context of the application. Failed attacks will cause denial-of-service conditions.

  20. T-664: Apache Santuario Buffer Overflow Lets Remote Users Deny Service

    Broader source: Energy.gov [DOE]

    A buffer overflow exists when creating or verifying XML signatures with RSA keys of sizes on the order of 8192 or more bits. This typically results in a crash and denial of service in applications that verify signatures using keys that could be supplied by an attacker.

  1. T-562: Novell ZENworks Configuration Management novell-tftp.exe Buffer Overflow

    Broader source: Energy.gov [DOE]

    A vulnerability has been reported in Novell ZENworks Configuration Management, which can be exploited by malicious people to compromise a vulnerable system. The vulnerability is caused due to a boundary error in novell-tftp.exe when parsing requests. This can be exploited to cause a heap-based buffer overflow via a specially crafted request sent to UDP port 69. The vulnerability is reported in versions 10.3.1, 10.3.2, and 11.0.

  2. T-556: BMC PATROL Agent Service Daemon stack-based buffer overflow

    Broader source: Energy.gov [DOE]

    Stack-based buffer overflow in BMC PATROL Agent Service Daemon for in Performance Analysis for Servers, Performance Assurance for Servers, and Performance Assurance for Virtual Servers 7.4.00 through 7.5.10; Performance Analyzer and Performance Predictor for Servers 7.4.00 through 7.5.10; and Capacity Management Essentials 1.2.00 (7.4.15) allows remote attackers to execute arbitrary code via a crafted length value in a BGS_MULTIPLE_READS command to TCP port 6768.

  3. T-567: Linux Kernel Buffer Overflow in ldm_frag_add() May Let Local Users Gain Elevated Privileges

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in the Linux Kernel. A local user may be able to obtain elevated privileges on the target system. A physically local user can connect a storage device with a specially crafted LDM partition table to trigger a buffer overflow in the ldm_frag_add() function in 'fs/partitions/ldm.c' and potentially execute arbitrary code with elevated privileges.

  4. T-559: Stack-based buffer overflow in oninit in IBM Informix Dynamic Server (IDS) 11.50 allows remote execution

    Broader source: Energy.gov [DOE]

    Stack-based buffer overflow in oninit in IBM Informix Dynamic Server (IDS) 11.50 allows remote execution attackers to execute arbitrary code via crafted arguments in the USELASTCOMMITTED session environment option in a SQL SET ENVIRONMENT statement

  5. V-188: Apache XML Security XPointer Expressions Processing Buffer...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    8: Apache XML Security XPointer Expressions Processing Buffer Overflow Vulnerability V-188: Apache XML Security XPointer Expressions Processing Buffer Overflow Vulnerability June...

  6. U-048: HP LaserJet Printers Unspecified Flaw Lets Remote Users...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    T-699: EMC AutoStart Buffer Overflows Let Remote Users Execute Arbitrary Code U-049: IBM Tivoli Netcool Reporter CGI Bug Lets Remote Users Inject Commands on the Target System...

  7. Nuclear reactor overflow line

    DOE Patents [OSTI]

    Severson, Wayne J.

    1976-01-01

    The overflow line for the reactor vessel of a liquid-metal-cooled nuclear reactor includes means for establishing and maintaining a continuous bleed flow of coolant amounting to 5 to 10% of the total coolant flow through the overflow line to prevent thermal shock to the overflow line when the reactor is restarted following a trip. Preferably a tube is disposed concentrically just inside the overflow line extending from a point just inside the reactor vessel to an overflow tank and a suction line is provided opening into the body of liquid metal in the reactor vessel and into the annulus between the overflow line and the inner tube.

  8. V-123: VMware ESX / ESXi libxml2 Buffer Underflow Vulnerability...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    (2044373) Addthis Related Articles U-128: VMware ESXESXi Buffer Overflow and Null Pointer Dereference Lets Local Users Gain Elevated Privileges T-552: Cisco Nexus 1000V...

  9. Overflow control valve

    DOE Patents [OSTI]

    Hundal, Rolv; Kessinger, Boyd A.; Parlak, Edward A.

    1984-07-24

    An overflow control valve for use in a liquid sodium coolant pump tank which valve can be extended to create a seal with the pump tank wall or retracted to break the seal thereby accommodating valve removal. An actuating shaft which controls valve disc position also has cams which bear on roller surfaces to force retraction of a sliding cylinder against spring tension to retract the cylinder from sealing contact with the pump tank.

  10. U-207: Pidgin 'mxit_show_message()' Function Stack-Based Buffer...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PROBLEM: Pidgin 'mxitshowmessage()' Function Stack-Based Buffer Overflow Vulnerability. PLATFORM: Versions prior to Pidgin 2.10.5 vulnerable. ABSTRACT: Pidgin is prone to a...

  11. T-629: Avaya WinPDM Multiple Buffer Overflow Vulnerabilities

    Broader source: Energy.gov [DOE]

    Vulnerabilities where malicious people are able to gain system access and execute arbitrary code with the privileges of a local user.

  12. Burst Buffer

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Buffer Burst Buffer Please note that the Burst Buffer is not yet available for general users. Burst Buffer Architecture and Software Roadmap The Burst Buffer on Cori is a layer of non-volatile storage that sits between the a processors' memory and the parallel file system. The burst buffer will serve to accelerate I/O performance of application on Cori. Read More » Example batch scripts Burst Buffer usage documentation Read More » Burst Buffer Early User Program NERSC has selected a number of

  13. T-559: Stack-based buffer overflow in oninit in IBM Informix...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    exploit this vulnerability. The specific flaw exists within the oninit process bound to TCP port 9088 when processing the arguments to the USELASTCOMMITTED option in a SQL query....

  14. V-219: Kingsoft Writer 2012 WPS Font Names Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    Kaveh Ghaemmaghami has discovered a vulnerability in Kingsoft Writer 2012, which can be exploited by malicious people to compromise a user's system.

  15. V-148: Novell iPrint Client Unspecified Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    A vulnerability has been reported in Novell iPrint Client, which can be exploited by malicious people to compromise a user's system

  16. U-114: IBM Personal Communications WS File Processing Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    A vulnerability in WorkStation files (.ws) by IBM Personal Communications could allow a remote attacker to cause a denial of service (application crash) or potentially execute arbitrary code on vulnerable installations of IBM Personal Communications.

  17. U-126: Cisco Adaptive Security Appliances Port Forwarder ActiveX Control Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in Cisco ASA. A remote user can cause arbitrary code to be executed on the target user's system.

  18. U-108: Net4Switch ipswcom ActiveX Control Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    The vulnerability is caused due to a boundary error within the "CxDbgPrint()" function (cxcmrt.dll) when creating a debug message string.

  19. V-056: FreeType BDF Glyph Processing Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    Several vulnerabilities were reported in FreeType. A remote user can cause arbitrary code to be executed on the target user's system.

  20. BUFFERED WELL FIELD OUTLINES

    U.S. Energy Information Administration (EIA) Indexed Site

    Option Explicit Const cFEETPERMETER As Double 3.281 ' ' deviation factor is applied to the buffer distance ' so with a buffer distance of 100 and factor of 0.05 the ' ...

  1. BUFFERED WELL FIELD OUTLINES

    U.S. Energy Information Administration (EIA) Indexed Site

    OIL & GAS FIELD OUTLINES FROM BUFFERED WELLS The VBA Code below builds oil & gas field boundary outlines (polygons) from buffered wells (points). Input well points layer must be a feature class (FC) with the following attributes: Field_name Buffer distance (can be unique for each well to represent reservoirs with different drainage radii) ...see figure below. Copy the code into a new module. Inputs: In ArcMap, data frame named "Task 1" Well FC as first layer (layer 0). Output:

  2. V-134: Cisco AnyConnect Secure Mobility Client Heap Overflow Lets Local

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Users Gain Elevated Privileges | Department of Energy 4: Cisco AnyConnect Secure Mobility Client Heap Overflow Lets Local Users Gain Elevated Privileges V-134: Cisco AnyConnect Secure Mobility Client Heap Overflow Lets Local Users Gain Elevated Privileges April 15, 2013 - 1:30am Addthis PROBLEM: Cisco AnyConnect Secure Mobility Client Heap Overflow Lets Local Users Gain Elevated Privileges PLATFORM: Cisco AnyConnect Secure Mobility Client Cisco Secure Desktop ABSTRACT: Some vulnerabilities

  3. U-128: VMware ESX/ESXi Buffer Overflow and Null Pointer Dereference Lets Local Users Gain Elevated Privileges

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in VMware ESX. A local user can obtain elevated privileges on the target system.

  4. U-177: Lotus Quickr for Domino ActiveX Control Buffer Overflow Lets Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in Lotus Quickr for Domino. A remote user can cause arbitrary code to be executed on the target user's system.

  5. V-134: Cisco AnyConnect Secure Mobility Client Heap Overflow...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    V-134: Cisco AnyConnect Secure Mobility Client Heap Overflow Lets Local Users Gain ... AnyConnect VPN Client Two Vulnerabilities V-066: Adobe AcrobatReader Multiple Flaws ...

  6. Electrodialysis operation with buffer solution

    DOE Patents [OSTI]

    Hryn, John N.; Daniels, Edward J.; Krumdick, Greg K.

    2009-12-15

    A new method for improving the efficiency of electrodialysis (ED) cells and stacks, in particular those used in chemical synthesis. The process entails adding a buffer solution to the stack for subsequent depletion in the stack during electrolysis. The buffer solution is regenerated continuously after depletion. This buffer process serves to control the hydrogen ion or hydroxide ion concentration so as to protect the active sites of electrodialysis membranes. The process enables electrodialysis processing options for products that are sensitive to pH changes.

  7. Doped LZO buffer layers for laminated conductors

    DOE Patents [OSTI]

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T. [Oxford, MA; Rupich, Martin W. [Framingham, MA

    2010-03-23

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  8. Burst Buffer Architecture and Software Roadmap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Burst Buffer Architecture Burst Buffer Architecture and Software Roadmap NERSC has been working with Cray to bring BurstBuffer technology to the users of Cori. The NERSC BurstBuffer is based on Cray DataWarp that utilizes flash or SSD (solid-state drive) technologies to significantly increase the I/O performance on Cori. Motivation In order to meet users' requests for better I/O performance NERSC is installing a Burst Buffer. There are two aspects of I/O performance. One aspect is the total

  9. Signature-based store checking buffer

    DOE Patents [OSTI]

    Sridharan, Vilas; Gurumurthi, Sudhanva

    2015-06-02

    A system and method for optimizing redundant output verification, are provided. A hardware-based store fingerprint buffer receives multiple instances of output from multiple instances of computation. The store fingerprint buffer generates a signature from the content included in the multiple instances of output. When a barrier is reached, the store fingerprint buffer uses the signature to verify the content is error-free.

  10. T-660: OpenSSH on FreeBSD Has Buffer Overflow in pam_thread() That Lets Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    The module does not adequately validate user input leading to an cross-site scripting (XSS) possibility in certain circumstances.

  11. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2010-06-15

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  12. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2006-10-31

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  13. Target buffer assessment for accelerator driven transmuters.

    SciTech Connect (OSTI)

    Gohar, Y.

    2002-10-08

    Accelerator driven transmuters use a buffer region to protect the structural and the cladding materials of the transmuter from the radiation damage caused by the high-energy spallation neutrons, to accommodate the coolant channels of the self cooled targets, and to have an insignificant effect on the neutron utilization for the transmutation process. These functions are contradicting with respect to the buffer thickness. An extension of the target region in the axial direction (the proton beam direction) is also required to act as a neutron multiplier for the forward component of the high-energy spallation neutrons and a reflector to minimize the neutron leakage. The buffer assessment was performed as a function of its thickness with different proton energies for a self-cooled Lead-Bismuth Eutectic and a sodium-cooled tungsten targets. The analyses show that the number of generated neutrons per proton has a low sensitivity to the buffer thickness. However, the number of neutrons reaching the transmuter is significantly reduced as the buffer thickness is increased. The transmuter neutrons dominate the nuclear responses in the structural material outside the target buffer. The length of the axial target extension is determined as a function of the proton beam energy.

  14. FROM HOT JUPITERS TO SUPER-EARTHS VIA ROCHE LOBE OVERFLOW

    SciTech Connect (OSTI)

    Valsecchi, Francesca; Rasio, Frederic A.; Steffen, Jason H.

    2014-09-20

    Through tidal dissipation in a slowly spinning host star, the orbits of many hot Jupiters may decay down to the Roche limit. We expect that the ensuing mass transfer will be stable in most cases. Using detailed numerical calculations, we find that this evolution is quite rapid, potentially leading to the complete removal of the gaseous envelope in a few gigayears, and leaving behind an exposed rocky core (a {sup h}ot super-Earth{sup )}. Final orbital periods are quite sensitive to the details of the planet's mass-radius relation and to the effects of irradiation and photo-evaporation, but could be as short as a few hours or as long as several days. Our scenario predicts the existence of planets with intermediate masses ({sup h}ot Neptunes{sup )} that should be found precisely at their Roche limit and in the process of losing mass through Roche lobe overflow. The observed excess of small single-planet candidate systems observed by Kepler may also be the result of this process. If so, the properties of their host stars should track those of the hot Jupiters. Moreover, the number of systems that produced hot Jupiters could be two to three times larger than one would infer from contemporary observations.

  15. Buffer layers on biaxially textured metal substrates

    DOE Patents [OSTI]

    Shoup, Shara S. (Woodstock, GA); Paranthamam, Mariappan (Knoxville, TN); Beach, David B. (Knoxville, TN); Kroeger, Donald M. (Knoxville, TN); Goyal, Amit (Knoxville, TN)

    2001-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  16. The exometabolome of Clostridium thermocellum reveals overflow metabolism at high cellulose loading

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Holwerda, Evert K.; Thorne, Philip G.; Olson, Daniel G.; Amador-Noguez, Daniel; Engle, Nancy L.; Tschaplinski, Timothy J.; van Dijken, Johannes P.; Lynd, Lee R.

    2014-10-21

    Background: Clostridium thermocellum is a model thermophilic organism for the production of biofuels from lignocellulosic substrates. The majority of publications studying the physiology of this organism use substrate concentrations of ≤10 g/L. However, industrially relevant concentrations of substrate start at 100 g/L carbohydrate, which corresponds to approximately 150 g/L solids. To gain insight into the physiology of fermentation of high substrate concentrations, we studied the growth on, and utilization of high concentrations of crystalline cellulose varying from 50 to 100 g/L by C. thermocellum. Results: Using a defined medium, batch cultures of C. thermocellum achieved 93% conversion of cellulose (Avicel)more » initially present at 100 g/L. The maximum rate of substrate utilization increased with increasing substrate loading. During fermentation of 100 g/L cellulose, growth ceased when about half of the substrate had been solubilized. However, fermentation continued in an uncoupled mode until substrate utilization was almost complete. In addition to commonly reported fermentation products, amino acids - predominantly L-valine and L-alanine - were secreted at concentrations up to 7.5 g/L. Uncoupled metabolism was also accompanied by products not documented previously for C. thermocellum, including isobutanol, meso- and RR/SS-2,3-butanediol and trace amounts of 3-methyl-1-butanol, 2-methyl-1-butanol and 1-propanol. We hypothesize that C. thermocellum uses overflow metabolism to balance its metabolism around the pyruvate node in glycolysis. In conclusion: C. thermocellum is able to utilize industrially relevant concentrations of cellulose, up to 93 g/L. We report here one of the highest degrees of crystalline cellulose utilization observed thus far for a pure culture of C. thermocellum, the highest maximum substrate utilization rate and the highest amount of isobutanol produced by a wild-type organism.« less

  17. The exometabolome of Clostridium thermocellum reveals overflow metabolism at high cellulose loading

    SciTech Connect (OSTI)

    Holwerda, Evert K.; Thorne, Philip G.; Olson, Daniel G.; Amador-Noguez, Daniel; Engle, Nancy L.; Tschaplinski, Timothy J.; van Dijken, Johannes P.; Lynd, Lee R.

    2014-10-21

    Background: Clostridium thermocellum is a model thermophilic organism for the production of biofuels from lignocellulosic substrates. The majority of publications studying the physiology of this organism use substrate concentrations of ≤10 g/L. However, industrially relevant concentrations of substrate start at 100 g/L carbohydrate, which corresponds to approximately 150 g/L solids. To gain insight into the physiology of fermentation of high substrate concentrations, we studied the growth on, and utilization of high concentrations of crystalline cellulose varying from 50 to 100 g/L by C. thermocellum. Results: Using a defined medium, batch cultures of C. thermocellum achieved 93% conversion of cellulose (Avicel) initially present at 100 g/L. The maximum rate of substrate utilization increased with increasing substrate loading. During fermentation of 100 g/L cellulose, growth ceased when about half of the substrate had been solubilized. However, fermentation continued in an uncoupled mode until substrate utilization was almost complete. In addition to commonly reported fermentation products, amino acids - predominantly L-valine and L-alanine - were secreted at concentrations up to 7.5 g/L. Uncoupled metabolism was also accompanied by products not documented previously for C. thermocellum, including isobutanol, meso- and RR/SS-2,3-butanediol and trace amounts of 3-methyl-1-butanol, 2-methyl-1-butanol and 1-propanol. We hypothesize that C. thermocellum uses overflow metabolism to balance its metabolism around the pyruvate node in glycolysis. In conclusion: C. thermocellum is able to utilize industrially relevant concentrations of cellulose, up to 93 g/L. We report here one of the highest degrees of crystalline cellulose utilization observed thus far for a pure culture of C. thermocellum, the highest maximum substrate utilization rate and the highest amount of isobutanol produced by a wild-type organism.

  18. Early Users to Test New Burst Buffer on Cori

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Early Users to Test New Burst Buffer on Cori Early Users to Test New Burst Buffer on Cori Designed to Accelerate IO Performance October 5, 2015 Corimockup NERSC has selected a ...

  19. Buffer for a gamma-insensitive optical sensor with gas and a buffer assembly

    DOE Patents [OSTI]

    Kruger, H.W.

    1994-05-10

    A buffer assembly is disclosed for a gamma-insensitive gas avalanche focal plane array operating in the ultra-violet/visible/infrared energy wavelengths and using a photocathode and an avalanche gas located in a gap between an anode and the photocathode. The buffer assembly functions to eliminate chemical compatibility between the gas composition and the materials of the photocathode. The buffer assembly in the described embodiment is composed of two sections, a first section constructed of glass honeycomb under vacuum and a second section defining a thin barrier film or membrane constructed, for example, of Al and Be, which is attached to and supported by the honeycomb. The honeycomb section, in turn, is supported by and adjacent to the photocathode. 7 figures.

  20. Buffer layers and articles for electronic devices

    DOE Patents [OSTI]

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  1. System and method for implementing periodic early discard in on-chip buffer memories of network elements

    DOE Patents [OSTI]

    Francini, Andrea

    2013-05-14

    An advance is made over the prior art in accordance with the principles of the present invention that is directed to a new approach for a system and method for a buffer management scheme called Periodic Early Discard (PED). The invention builds on the observation that, in presence of TCP traffic, the length of a queue can be stabilized by selection of an appropriate frequency for packet dropping. For any combination of number of TCP connections and distribution of the respective RTT values, there exists an ideal packet drop frequency that prevents the queue from over-flowing or under-flowing. While the value of the ideal packet drop frequency may quickly change over time and is sensitive to the series of TCP connections affected by past packet losses, and most of all is impossible to compute inline, it is possible to approximate it with a margin of error that allows keeping the queue occupancy within a pre-defined range for extended periods of time. The PED scheme aims at tracking the (unknown) ideal packet drop frequency, adjusting the approximated value based on the evolution of the queue occupancy, with corrections of the approximated packet drop frequency that occur at a timescale that is comparable to the aggregate time constant of the set of TCP connections that traverse the queue.

  2. Catalyst functionalized buffer sorbent pebbles for rapid separation of

    Office of Scientific and Technical Information (OSTI)

    carbon dioxide from gas mixtures (Patent) | DOEPatents Catalyst functionalized buffer sorbent pebbles for rapid separation of carbon dioxide from gas mixtures Title: Catalyst functionalized buffer sorbent pebbles for rapid separation of carbon dioxide from gas mixtures A method for separating CO.sub.2 from gas mixtures uses a slurried media impregnated with buffer compounds and coating the solid media with a catalyst or enzyme that promotes the transformation of CO.sub.2 to carbonic acid.

  3. Epitaxial Growth of Strontium Bismuth Tantalate/Niobate of Buffered...

    Office of Scientific and Technical Information (OSTI)

    Conference: Epitaxial Growth of Strontium Bismuth TantalateNiobate of Buffered Magnesium Oxide Substrates Citation Details In-Document Search Title: Epitaxial Growth of Strontium ...

  4. Early Users to Test New Burst Buffer on Cori

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Early Users to Test New Burst Buffer on Cori Early Users to Test New Burst Buffer on Cori Designed to Accelerate I/O Performance October 5, 2015 Corimockup NERSC has selected a number of HPC research projects to participate in the center's new Burst Buffer Early User Program, where they will be able to test and run their codes using the new Burst Buffer feature on the center's newest supercomputer, Cori. Cori Phase 1, recently installed in the new Computational Research and Theory building at

  5. Back contact buffer layer for thin-film solar cells

    DOE Patents [OSTI]

    Compaan, Alvin D.; Plotnikov, Victor V.

    2014-09-09

    A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

  6. Catalyst functionalized buffer sorbent pebbles for rapid separation...

    Office of Scientific and Technical Information (OSTI)

    of carbon dioxide from gas mixtures Title: Catalyst functionalized buffer sorbent pebbles for rapid separation of carbon dioxide from gas mixtures A method for separating ...

  7. Buffer layer for thin film structures (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate ...

  8. Methods for improved growth of group III nitride buffer layers

    DOE Patents [OSTI]

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  9. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOE Patents [OSTI]

    Morse, Jeffrey D.; Cooper, Gregory A.

    2002-01-01

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  10. Mitigation of substrate defects in reticles using multilayer buffer layers

    DOE Patents [OSTI]

    Mirkarimi, Paul B.; Bajt, Sasa; Stearns, Daniel G.

    2001-01-01

    A multilayer film is used as a buffer layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The multilayer buffer layer deposited intermediate the reticle substrate and the reflective coating produces a smoothing of small particles and other defects on the reticle substrate. The reduction in defect size is controlled by surface relaxation during the buffer layer growth process and by the degree of intermixing and volume contraction of the materials at the multilayer interfaces. The buffer layers are deposited at near-normal incidence via a low particulate ion beam sputtering process. The growth surface of the buffer layer may also be heated by a secondary ion source to increase the degree of intermixing and improve the mitigation of defects.

  11. Replenishing data descriptors in a DMA injection FIFO buffer

    DOE Patents [OSTI]

    Archer, Charles J.; Blocksome, Michael A.; Cernohous, Bob R.; Heidelberger, Philip; Kumar, Sameer; Parker, Jeffrey J.

    2011-10-11

    Methods, apparatus, and products are disclosed for replenishing data descriptors in a Direct Memory Access (`DMA`) injection first-in-first-out (`FIFO`) buffer that include: determining, by a messaging module on an origin compute node, whether a number of data descriptors in a DMA injection FIFO buffer exceeds a predetermined threshold, each data descriptor specifying an application message for transmission to a target compute node; queuing, by the messaging module, a plurality of new data descriptors in a pending descriptor queue if the number of the data descriptors in the DMA injection FIFO buffer exceeds the predetermined threshold; establishing, by the messaging module, interrupt criteria that specify when to replenish the injection FIFO buffer with the plurality of new data descriptors in the pending descriptor queue; and injecting, by the messaging module, the plurality of new data descriptors into the injection FIFO buffer in dependence upon the interrupt criteria.

  12. Method of depositing buffer layers on biaxially textured metal substrates

    Office of Scientific and Technical Information (OSTI)

    (Patent) | SciTech Connect Method of depositing buffer layers on biaxially textured metal substrates Citation Details In-Document Search Title: Method of depositing buffer layers on biaxially textured metal substrates A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0 Authors: Beach, David B. [1] ; Morrell, Jonathan S. [1] ; Paranthaman, Mariappan [1] ; Chirayil, Thomas [1] ; Specht,

  13. Buffer layers for REBCO films for use in superconducting devices

    SciTech Connect (OSTI)

    Goyal, Amit; Wee, Sung-Hun

    2014-06-10

    A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

  14. Enhanced adhesion for LIGA microfabrication by using a buffer layer

    DOE Patents [OSTI]

    Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

    2001-01-01

    The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

  15. Enhanced adhesion for LIGA microfabrication by using a buffer layer

    DOE Patents [OSTI]

    Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

    2004-01-27

    The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

  16. Buffer layers on biaxially textured metal substrates (Patent...

    Office of Scientific and Technical Information (OSTI)

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzingannealing in ...

  17. Optimizing the availability of a buffered industrial process

    DOE Patents [OSTI]

    Martz, Jr., Harry F.; Hamada, Michael S.; Koehler, Arthur J.; Berg, Eric C.

    2004-08-24

    A computer-implemented process determines optimum configuration parameters for a buffered industrial process. A population size is initialized by randomly selecting a first set of design and operation values associated with subsystems and buffers of the buffered industrial process to form a set of operating parameters for each member of the population. An availability discrete event simulation (ADES) is performed on each member of the population to determine the product-based availability of each member. A new population is formed having members with a second set of design and operation values related to the first set of design and operation values through a genetic algorithm and the product-based availability determined by the ADES. Subsequent population members are then determined by iterating the genetic algorithm with product-based availability determined by ADES to form improved design and operation values from which the configuration parameters are selected for the buffered industrial process.

  18. Method of depositing buffer layers on biaxially textured metal...

    Office of Scientific and Technical Information (OSTI)

    eu; gd; tb; tm; resup1subx; resup2sub1-xsub2; osub3; buffer; layer; deposited; sol-gel; metal-organic; decomposition; laminate; article; layer; ybco; resup1subx; ...

  19. Method of depositing buffer layers on biaxially textured metal substrates

    Office of Scientific and Technical Information (OSTI)

    (Patent) | SciTech Connect Method of depositing buffer layers on biaxially textured metal substrates Citation Details In-Document Search Title: Method of depositing buffer layers on biaxially textured metal substrates × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in energy

  20. CHEMICAL SOLUTION DEPOSITION BASED OXIDE BUFFERS AND YBCO COATED CONDUCTORS

    SciTech Connect (OSTI)

    Paranthaman, Mariappan Parans

    2011-01-01

    We have reviewed briefly the growth of buffer and high temperature superconducting oxide thin films using a chemical solution deposition (CSD) method. In the Rolling-Assisted Biaxially Textured Substrates (RABiTS) process, developed at Oak Ridge National Laboratory, utilizes the thermo mechanical processing to obtain the flexible, biaxially oriented copper, nickel or nickel-alloy substrates. Buffers and Rare Earth Barium Copper Oxide (REBCO) superconductors have been deposited epitaxially on the textured nickel alloy substrates. The starting substrate serves as a template for the REBCO layer, which has substantially fewer weak links. Buffer layers play a major role in fabricating the second generation REBCO wire technology. The main purpose of the buffer layers is to provide a smooth, continuous and chemically inert surface for the growth of the REBCO film, while transferring the texture from the substrate to the superconductor layer. To achieve this, the buffer layers need to be epitaxial to the substrate, i.e. they have to nucleate and grow in the same bi-axial texture provided by the textured metal foil. The most commonly used RABiTS multi-layer architectures consist of a starting template of biaxially textured Ni-5 at.% W (Ni-W) substrate with a seed (first) layer of Yttrium Oxide (Y2O3), a barrier (second) layer of Yttria Stabilized Zirconia (YSZ), and a Cerium Oxide (CeO2) cap (third) layer. These three buffer layers are generally deposited using physical vapor deposition (PVD) techniques such as reactive sputtering. On top of the PVD template, REBCO film is then grown by a chemical solution deposition. This article reviews in detail about the list of oxide buffers and superconductor REBCO films grown epitaxially on single crystal and/or biaxially textured Ni-W substrates using a CSD method.

  1. Message communications of particular message types between compute nodes using DMA shadow buffers

    DOE Patents [OSTI]

    Blocksome, Michael A.; Parker, Jeffrey J.

    2010-11-16

    Message communications of particular message types between compute nodes using DMA shadow buffers includes: receiving a buffer identifier specifying an application buffer having a message of a particular type for transmission to a target compute node through a network; selecting one of a plurality of shadow buffers for a DMA engine on the compute node for storing the message, each shadow buffer corresponding to a slot of an injection FIFO buffer maintained by the DMA engine; storing the message in the selected shadow buffer; creating a data descriptor for the message stored in the selected shadow buffer; injecting the data descriptor into the slot of the injection FIFO buffer corresponding to the selected shadow buffer; selecting the data descriptor from the injection FIFO buffer; and transmitting the message specified by the selected data descriptor through the data communications network to the target compute node.

  2. Method of depositing buffer layers on biaxially textured metal substrates

    DOE Patents [OSTI]

    Beach, David B. (Knoxville, TN); Morrell, Jonathan S. (Knoxville, TN); Paranthaman, Mariappan (Knoxville, TN); Chirayil, Thomas (Knoxville, TN); Specht, Eliot D. (Knoxville, TN); Goyal, Amit (Knoxville, TN)

    2002-08-27

    A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  3. Rare earth zirconium oxide buffer layers on metal substrates

    DOE Patents [OSTI]

    Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

    2001-01-01

    A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  4. 20141029-Smitasin-Tierney-LBLnet-buffer-experiments.pptx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Switch Buffers Experiments: How much buffer do you need to support 10G flows? Michael Smitasin ( mnsmitasin@lbl.gov), L awrence B erkeley N a>onal L aboratory Brian L T ierney ( bl>erney@es.net), E Snet 2014 T echnology E xchange, O ct 2 9, 2 014 11/3/14 2 Buffer E xperiment # 1: J uniper M X80 Experiment # 1 S etup * Try v arious b uffer s ize o n J uniper M X80 u sing ' scheduler---map' * Maximum q ueue b uffer = 1 25MB * 2Gbps U DP b ackground t raffic f rom h ost 4 t o h ost 3 ; 9 000

  5. Buffer layers on metal alloy substrates for superconducting tapes

    DOE Patents [OSTI]

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-10-05

    An article including a substrate, at least one intermediate layer upon the surface of the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the at least one intermediate layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected I.sub.c 's of over 200 Amperes across a sample 1 cm wide.

  6. Epitaxial Growth of Strontium Bismuth Tantalate/Niobate of Buffered

    Office of Scientific and Technical Information (OSTI)

    Magnesium Oxide Substrates (Conference) | SciTech Connect Conference: Epitaxial Growth of Strontium Bismuth Tantalate/Niobate of Buffered Magnesium Oxide Substrates Citation Details In-Document Search Title: Epitaxial Growth of Strontium Bismuth Tantalate/Niobate of Buffered Magnesium Oxide Substrates Epitaxial films of strontium bismuth tantalate (SrBi{sub 2}Ta{sub 2}O{sub 9}, SBT) and strontium bismuth niobate (SrBi{sub 2}Nb{sub 2}O{sub 9}, SBN) were grown using solution deposition

  7. Buffered coscheduling for parallel programming and enhanced fault tolerance

    DOE Patents [OSTI]

    Petrini, Fabrizio; Feng, Wu-chun

    2006-01-31

    A computer implemented method schedules processor jobs on a network of parallel machine processors or distributed system processors. Control information communications generated by each process performed by each processor during a defined time interval is accumulated in buffers, where adjacent time intervals are separated by strobe intervals for a global exchange of control information. A global exchange of the control information communications at the end of each defined time interval is performed during an intervening strobe interval so that each processor is informed by all of the other processors of the number of incoming jobs to be received by each processor in a subsequent time interval. The buffered coscheduling method of this invention also enhances the fault tolerance of a network of parallel machine processors or distributed system processors

  8. Buffer layers on metal alloy substrates for superconducting tapes

    DOE Patents [OSTI]

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-06-29

    An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

  9. Sol-gel deposition of buffer layers on biaxially textured metal...

    Office of Scientific and Technical Information (OSTI)

    Sol-gel deposition of buffer layers on biaxially textured metal substances Citation Details In-Document Search Title: Sol-gel deposition of buffer layers on biaxially textured ...

  10. Buffer layer for thin film structures (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Buffer layer for thin film structures Citation Details In-Document Search Title: Buffer layer for thin film structures A composite structure including a base substrate and a layer...

  11. The W-WO[subscript 2] oxygen fugacity buffer (WWO) at high pressure and

    Office of Scientific and Technical Information (OSTI)

    temperature: Implications for fO[subscript 2] buffering and metal-silicate partitioning (Journal Article) | SciTech Connect The W-WO[subscript 2] oxygen fugacity buffer (WWO) at high pressure and temperature: Implications for fO[subscript 2] buffering and metal-silicate partitioning Citation Details In-Document Search Title: The W-WO[subscript 2] oxygen fugacity buffer (WWO) at high pressure and temperature: Implications for fO[subscript 2] buffering and metal-silicate partitioning Authors:

  12. Photo-induced wettability of TiO{sub 2} film with Au buffer layer

    SciTech Connect (OSTI)

    Purkayastha, Debarun Dhar; Sangani, L. D. Varma; Krishna, M. Ghanashyam; Madhurima, V.

    2014-04-24

    The effect of thickness of Au buffer layer (15-25 nm) between TiO{sub 2} film and substrate on the wettability of TiO{sub 2} films is reported. TiO{sub 2} films grown on Au buffer layer have a higher contact angle of 96-;100 as compared to 47.6o for the film grown without buffer layer. The transition from hydrophobicity to hydrophilicity under UV irradiation occurs within 10 min. for the buffer layered films whereas it is almost 30 min. for the film grown without buffer layer. The enhanced photo induced hydrophilicity is shown to be surface energy driven.

  13. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOE Patents [OSTI]

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

    2009-03-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  14. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOE Patents [OSTI]

    Sankar, Sambasivan; Goyal, Amit; Barnett, Scott A.; Kim, Ilwon; Kroeger, Donald M.

    2004-08-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

  15. Buffer layers on rolled nickel or copper as superconductor substrates

    DOE Patents [OSTI]

    Paranthaman, Mariappan; Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /CeO.sub.2 /Ni, RE.sub.2 O.sub.3 /Ni (RE=Rare Earth), and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /CeO.sub.2 /Cu, RE.sub.2 O.sub.3 /Cu, and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approach, which includes chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

  16. Superconducting composite with multilayer patterns and multiple buffer layers

    DOE Patents [OSTI]

    Wu, X.D.; Muenchausen, R.E.

    1993-10-12

    An article of manufacture is described including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superconductor. 5 figures.

  17. Sol-gel deposition of buffer layers on biaxially textured metal substances

    Office of Scientific and Technical Information (OSTI)

    (Patent) | SciTech Connect Sol-gel deposition of buffer layers on biaxially textured metal substances Citation Details In-Document Search Title: Sol-gel deposition of buffer layers on biaxially textured metal substances A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing

  18. Doped Y.sub.2O.sub.3 buffer layers for laminated conductors

    DOE Patents [OSTI]

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T. [Oxford, MA; Rupich, Martin W. [Framingham, MA

    2007-08-21

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y.sub.2O.sub.3 and a dopant for blocking cation diffusion through the Y.sub.2O.sub.3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  19. Buffer layer for thin film structures (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    such as YBCO upon the buffer layer. Authors: Foltyn, Stephen R. ; Jia, Quanxi ; Arendt, Paul N. ; Wang, Haiyan Publication Date: 2010-06-15 OSTI Identifier: 1176358 Report ...

  20. Buffer layer for thin film structures (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate ...

  1. Superconducting composite with multilayer patterns and multiple buffer layers

    DOE Patents [OSTI]

    Wu, Xin D.; Muenchausen, Ross E.

    1993-01-01

    An article of manufacture including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superco n FIELD OF THE INVENTION The present invention relates to the field of superconducting articles having two distinct regions of superconductive material with differing in-plane orientations whereby the conductivity across the boundary between the two regions can be tailored. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  2. Catalyst functionalized buffer sorbent pebbles for rapid separation of carbon dioxide from gas mixtures

    DOE Patents [OSTI]

    Aines, Roger D

    2015-03-31

    A method for separating CO.sub.2 from gas mixtures uses a slurried media impregnated with buffer compounds and coating the solid media with a catalyst or enzyme that promotes the transformation of CO.sub.2 to carbonic acid. Buffer sorbent pebbles with a catalyst or enzyme coating are provided for rapid separation of CO.sub.2 from gas mixtures.

  3. Catalyst functionalized buffer sorbent pebbles for rapid separation of carbon dioxide from gas mixtures

    DOE Patents [OSTI]

    Aines, Roger D.

    2013-03-12

    A method for separating CO.sub.2 from gas mixtures uses a slurried media impregnated with buffer compounds and coating the solid media with a catalyst or enzyme that promotes the transformation of CO.sub.2 to carbonic acid. Buffer sorbent pebbles with a catalyst or enzyme coating are provided for rapid separation of CO.sub.2 from gas mixtures.

  4. Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom

    DOE Patents [OSTI]

    Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    The present invention provides methods and biaxially textured articles having a deformed epitaxial layer formed therefrom for use with high temperature superconductors, photovoltaic, ferroelectric, or optical devices. A buffer layer is epitaxially deposited onto biaxially-textured substrates and then mechanically deformed. The deformation process minimizes or eliminates grooves, or other irregularities, formed on the buffer layer while maintaining the biaxial texture of the buffer layer. Advantageously, the biaxial texture of the buffer layer is not altered during subsequent heat treatments of the deformed buffer. The present invention provides mechanical densification procedures which can be incorporated into the processing of superconducting films through the powder deposit or precursor approaches without incurring unfavorable high-angle grain boundaries.

  5. Propagation of misfit dislocations from buffer/Si interface into Si

    DOE Patents [OSTI]

    Liliental-Weber, Zuzanna; Maltez, Rogerio Luis; Morkoc, Hadis; Xie, Jinqiao

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  6. Reprogrammable read only variable threshold transistor memory with isolated addressing buffer

    DOE Patents [OSTI]

    Lodi, Robert J.

    1976-01-01

    A monolithic integrated circuit, fully decoded memory comprises a rectangular array of variable threshold field effect transistors organized into a plurality of multi-bit words. Binary address inputs to the memory are decoded by a field effect transistor decoder into a plurality of word selection lines each of which activates an address buffer circuit. Each address buffer circuit, in turn, drives a word line of the memory array. In accordance with the word line selected by the decoder the activated buffer circuit directs reading or writing voltages to the transistors comprising the memory words. All of the buffer circuits additionally are connected to a common terminal for clearing all of the memory transistors to a predetermined state by the application to the common terminal of a large magnitude voltage of a predetermined polarity. The address decoder, the buffer and the memory array, as well as control and input/output control and buffer field effect transistor circuits, are fabricated on a common substrate with means provided to isolate the substrate of the address buffer transistors from the remainder of the substrate so that the bulk clearing function of simultaneously placing all of the memory transistors into a predetermined state can be performed.

  7. Buffer architecture for biaxially textured structures and method of fabricating same

    DOE Patents [OSTI]

    Norton, David P.; Park, Chan; Goyal, Amit

    2004-04-06

    The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO.sub.2 and/or HfO.sub.2. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO.sub.2 and HfO.sub.2. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1.times.10.sup.-5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  8. GaAs buffer layer technique for vertical nanowire growth on Si substrate

    SciTech Connect (OSTI)

    Xu, Xiaoqing Parizi, Kokab B.; Huo, Yijie; Kang, Yangsen; Philip Wong, H.-S.; Li, Yang

    2014-02-24

    Gold catalyzed vapor-liquid-solid method is widely applied to IIIV nanowire (NW) growth on Si substrate. However, the easy oxidation of Si, possible Si contamination in the NWs, high defect density in the NWs, and high sensitivity of the NW morphology to growth conditions largely limit its controllability. In this work, we developed a buffer layer technique by introducing a GaAs thin film with predefined polarity as a template. It is found that samples grown on these buffer layers all have high vertical NW yields in general, due to the single-orientation of the buffer layers. Low temperature buffer with smoother surface leads to highest yield of vertical NWs, while high temperature (HT) buffer with better crystallinity results in perfect NW quality. The defect-free property we observed here is very promising for optoelectronic device applications based on GaAs NW. Moreover, the buffer layers can eliminate Si contamination by preventing Si-Au alloy formation and by increasing the thickness of the Si diffusion barrier, thus providing more flexibility to vertical NW growth. The buffer layer technique we demonstrated here could be easily extended to other III-V on Si system for electronic and photonic applications.

  9. CUG Honors NERSC Burst Buffer Early User Program with 'Best Paper'

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CUG Honors NERSC Burst Buffer Early User Program with 'Best Paper' CUG Honors NERSC Burst Buffer Early User Program with 'Best Paper' May 11, 2016 Contact: Kathy Kincade, +1 510 495 2124, kkincade@lbl.gov CUGaward NERSC was honored with the 2016 CUG Best Paper award for "Accelerating Science with the NERSC Burst Buffer Early User Program." Wahid Bhimji (right), shown here with CUG Program Chair Andrew Winfer, accepted the award on behalf of the NERSC team that authored the paper. A new

  10. Comparator circuits with local ramp buffering for a column-parallel single slope ADC

    DOE Patents [OSTI]

    Milkov, Mihail M.

    2016-04-26

    A comparator circuit suitable for use in a column-parallel single-slope analog-to-digital converter comprises a comparator, an input voltage sampling switch, a sampling capacitor arranged to store a voltage which varies with an input voltage when the sampling switch is closed, and a local ramp buffer arranged to buffer a global voltage ramp applied at an input. The comparator circuit is arranged such that its output toggles when the buffered global voltage ramp exceeds the stored voltage. Both DC- and AC-coupled comparator embodiments are disclosed.

  11. Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates

    DOE Patents [OSTI]

    Paranthaman, Mariappan (Knoxville, TN); Goyal, Amit (Knoxville, TN); Kroeger, Donald M. (Knoxville, TN); List, III, Frederic A. (Andersonville, TN)

    2002-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

  12. MgO buffer layers on rolled nickel or copper as superconductor substrates

    DOE Patents [OSTI]

    Paranthaman, Mariappan (Knoxville, TN); Goyal, Amit (Knoxville, TN); Kroeger, Donald M. (Knoxville, TN); List, III, Frederic A. (Andersonville, TN)

    2001-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

  13. Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

    DOE Patents [OSTI]

    Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

    2005-10-18

    An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  14. Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

    DOE Patents [OSTI]

    Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

    2003-09-09

    An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  15. Optically pumped alkali laser and amplifier using helium-3 buffer gas

    DOE Patents [OSTI]

    Beach, Raymond J.; Page, Ralph; Soules, Thomas; Stappaerts, Eddy; Wu, Sheldon Shao Quan

    2010-09-28

    In one embodiment, a laser oscillator is provided comprising an optical cavity, the optical cavity including a gain medium including an alkali vapor and a buffer gas, the buffer gas including .sup.3He gas, wherein if .sup.4He gas is also present in the buffer gas, the ratio of the concentration of the .sup.3He gas to the .sup.4He gas is greater than 1.37.times.10.sup.-6. Additionally, an optical excitation source is provided. Furthermore, the laser oscillator is capable of outputting radiation at a first frequency. In another embodiment, an apparatus is provided comprising a gain medium including an alkali vapor and a buffer gas including .sup.3He gas, wherein if .sup.4He gas is also present in the buffer gas, the ratio of the concentration of the .sup.3He gas to the .sup.4He gas is greater than 1.37.times.10.sup.-6. Other embodiments are also disclosed.

  16. Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

    DOE Patents [OSTI]

    Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

    2015-05-26

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

  17. Electron dynamics of the buffer layer and bilayer graphene on SiC

    SciTech Connect (OSTI)

    Shearer, Alex J.; Caplins, Benjamin W.; Suich, David E.; Harris, Charles B., E-mail: cbharris@berkeley.edu [Department of Chemistry, University of California at Berkeley, Berkeley, California 94720 (United States); Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Johns, James E. [Department of Chemistry, University of Minnesota Twin Cities, Minneapolis, Minnesota 55455 (United States); Hersam, Mark C. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-06-09

    Angle- and time-resolved two-photon photoemission (TPPE) was used to investigate electronic states in the buffer layer of 4H-SiC(0001). An image potential state (IPS) series was observed on this strongly surface-bound buffer layer, and dispersion measurements indicated free-electron-like behavior for all states in this series. These results were compared with TPPE taken on bilayer graphene, which also show the existence of a free-electron-like IPS series. Lifetimes for the n?=?2, and n?=?3 states were obtained from time-resolved TPPE; slightly increased lifetimes were observed in the bilayer graphene sample for the n?=?2 the n?=?3 states. Despite the large band gap of graphene at the center of the Brillouin zone, the lifetime results demonstrate that the graphene layers do not behave as a simple tunneling barrier, suggesting that the buffer layer and graphene overlayers play a direct role in the decay of IPS electrons.

  18. GaAs buffer layer technique for vertical nanowire growth on Si substrate

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: GaAs buffer layer technique for vertical nanowire growth on Si substrate Citation Details In-Document Search Title: GaAs buffer layer technique for vertical nanowire growth on Si substrate Gold catalyzed vapor-liquid-solid method is widely applied to III-V nanowire (NW) growth on Si substrate. However, the easy oxidation of Si, possible Si contamination in the NWs, high defect density in the NWs, and high sensitivity of the NW morphology

  19. Intermixing at the absorber-buffer layer interface in thin-film solar

    Office of Scientific and Technical Information (OSTI)

    cells: The electronic effects of point defects in Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4} devices (Journal Article) | SciTech Connect Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4} devices Citation Details In-Document Search Title: Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in

  20. Sol-gel deposition of buffer layers on biaxially textured metal substances

    Office of Scientific and Technical Information (OSTI)

    (Patent) | SciTech Connect Sol-gel deposition of buffer layers on biaxially textured metal substances Citation Details In-Document Search Title: Sol-gel deposition of buffer layers on biaxially textured metal substances × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in energy

  1. Preparation of CIGS-based solar cells using a buffered electrodeposition bath

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath

    2007-11-20

    A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

  2. Minimally buffered data transfers between nodes in a data communications network

    DOE Patents [OSTI]

    Miller, Douglas R.

    2015-06-23

    Methods, apparatus, and products for minimally buffered data transfers between nodes in a data communications network are disclosed that include: receiving, by a messaging module on an origin node, a storage identifier, a origin data type, and a target data type, the storage identifier specifying application storage containing data, the origin data type describing a data subset contained in the origin application storage, the target data type describing an arrangement of the data subset in application storage on a target node; creating, by the messaging module, origin metadata describing the origin data type; selecting, by the messaging module from the origin application storage in dependence upon the origin metadata and the storage identifier, the data subset; and transmitting, by the messaging module to the target node, the selected data subset for storing in the target application storage in dependence upon the target data type without temporarily buffering the data subset.

  3. Evaluating resilience of DNP3-controlled SCADA systems against event buffer flooding

    SciTech Connect (OSTI)

    Yan, Guanhua; Nicol, David M; Jin, Dong

    2010-12-16

    The DNP3 protocol is widely used in SCADA systems (particularly electrical power) as a means of communicating observed sensor state information back to a control center. Typical architectures using DNP3 have a two level hierarchy, where a specialized data aggregator device receives observed state from devices within a local region, and the control center collects the aggregated state from the data aggregator. The DNP3 communication between control center and data aggregator is asynchronous with the DNP3 communication between data aggregator and relays; this leads to the possibility of completely filling a data aggregator's buffer of pending events, when a relay is compromised or spoofed and sends overly many (false) events to the data aggregator. This paper investigates how a real-world SCADA device responds to event buffer flooding. A Discrete-Time Markov Chain (DTMC) model is developed for understanding this. The DTMC model is validated by a Moebius simulation model and data collected on real SCADA testbed.

  4. Selective growth of Pb islands on graphene/SiC buffer layers

    SciTech Connect (OSTI)

    Liu, X. T.; Miao, Y. P.; Ma, D. Y.; Hu, T. W.; Ma, F. E-mail: kwxu@mail.xjtu.edu.cn; Chu, Paul K.; Xu, K. W. E-mail: kwxu@mail.xjtu.edu.cn

    2015-02-14

    Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 6?(3) reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Since Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.

  5. Understanding I/O Performance on Burst Buffers through Holistic I/O

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Characterization | Argonne National Laboratory Understanding I/O Performance on Burst Buffers through Holistic I/O Characterization May 17, 2016 10:00AM to 11:00AM Presenter Glenn K. Lockwood, National Energy Research Scientific Computing Center Location Building 240, Room 4301 Type Seminar Series MCS Seminar Abstract: The input/output (I/O) subsystems of extreme-scale computing systems are becoming more complex as they stratify into tiers optimized for different balances of performance and

  6. Evaluation of the Effective Moisture Penetration Depth Model for Estimating Moisture Buffering in Buildings

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Evaluation of the Effective Moisture Penetration Depth Model for Estimating Moisture Buffering in Buildings J. Woods, J. Winkler, and D. Christensen National Renewable Energy Laboratory Technical Report NREL/TP-5500-57441 January 2013 NREL is a national laboratory of the U.S. Department of Energy, Office of Energy Efficiency & Renewable Energy, operated by the Alliance for Sustainable Energy, LLC. National Renewable Energy Laboratory 15013 Denver West Parkway Golden, Colorado 80401

  7. Scaling nitrogen and carbon interactions: What are the consequences of biological buffering?

    SciTech Connect (OSTI)

    Weston, David J.; Rogers, Alistair; Tschaplinski, Timothy J.; Gunter, Lee E.; Jawdy, Sara A.; Engle, Nancy L.; Heady, Lindsey E.; Tuskan, Gerald A.; Wullschleger, Stan D.

    2015-06-25

    Understanding the consequences of elevated CO2 (eCO2; 800 ppm) on terrestrial ecosystems is a central theme in global change biology, but relatively little is known about how altered plant C and N metabolism influences higher levels of biological organization. Here, we investigate the consequences of C and N interactions by genetically modifying the N-assimilation pathway in Arabidopsis and initiating growth chamber and mesocosm competition studies at current CO2 (cCO2; 400 ppm) and eCO2 over multiple generations. Using a suite of ecological, physiological, and molecular genomic tools, we show that a single-gene mutant of a key enzyme (nia2) elicited a highly orchestrated buffering response starting with a fivefold increase in the expression of a gene paralog (nia1) and a 63% increase in the expression of gene network module enriched for N-assimilation genes. The genetic perturbation reduced amino acids, protein, and TCA-cycle intermediate concentrations in the nia2 mutant compared to the wild-type, while eCO2 mainly increased carbohydrate concentrations. The mutant had reduced net photosynthetic rates due to a 27% decrease in carboxylation capacity and an 18% decrease in electron transport rates. The expression of these buffering mechanisms resulted in a penalty that negatively correlated with fitness and population dynamics yet showed only minor alterations in our estimates of population function, including total per unit area biomass, ground cover, and leaf area index. As a result, this study provides insight into the consequences of buffering mechanisms that occur post-genetic perturbations in the N pathway and the associated outcomes these buffering systems have on plant populations relative to eCO2.

  8. Photovoltaic devices comprising zinc stannate buffer layer and method for making

    DOE Patents [OSTI]

    Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J.

    2001-01-01

    A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

  9. Scaling carbon and nitrogen interactions. What are the consequences of biological buffering?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Weston, David; Rogers, Alistair; Tschaplinski, Timothy J.; Gunter, Lee E; Jawdy, Sara; Engle, Nancy L.; Heady, Lindsey E.; Tuskan, Gerald A.; Wullschleger, Stan D.

    2015-06-25

    Understanding the consequences of elevated CO2 (eCO2; 800 ppm) on terrestrial ecosystems is a central theme in global change biology, but relatively little is known about how altered plant C and N metabolism influences higher levels of biological organization. Here, we investigate the consequences of C and N interactions by genetically modifying the N-assimilation pathway in Arabidopsis and initiating growth chamber and mesocosm competition studies at current CO2 (cCO2; 400 ppm) and eCO2 over multiple generations. Using a suite of ecological, physiological, and molecular genomic tools, we show that a single-gene mutant of a key enzyme (nia2) elicited a highlymore » orchestrated buffering response starting with a fivefold increase in the expression of a gene paralog (nia1) and a 63% increase in the expression of gene network module enriched for N-assimilation genes. The genetic perturbation reduced amino acids, protein, and TCA-cycle intermediate concentrations in the nia2 mutant compared to the wild-type, while eCO2 mainly increased carbohydrate concentrations. The mutant had reduced net photosynthetic rates due to a 27% decrease in carboxylation capacity and an 18% decrease in electron transport rates. The expression of these buffering mechanisms resulted in a penalty that negatively correlated with fitness and population dynamics yet showed only minor alterations in our estimates of population function, including total per unit area biomass, ground cover, and leaf area index. This study provides insight into the consequences of buffering mechanisms that occur post-genetic perturbations in the N pathway and the associated outcomes these buffering systems have on plant populations relative to eCO2.« less

  10. ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.

    2009-11-03

    The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

  11. Scaling carbon and nitrogen interactions. What are the consequences of biological buffering?

    SciTech Connect (OSTI)

    Weston, David; Rogers, Alistair; Tschaplinski, Timothy J.; Gunter, Lee E; Jawdy, Sara; Engle, Nancy L.; Heady, Lindsey E.; Tuskan, Gerald A.; Wullschleger, Stan D.

    2015-06-25

    Understanding the consequences of elevated CO2 (eCO2; 800 ppm) on terrestrial ecosystems is a central theme in global change biology, but relatively little is known about how altered plant C and N metabolism influences higher levels of biological organization. Here, we investigate the consequences of C and N interactions by genetically modifying the N-assimilation pathway in Arabidopsis and initiating growth chamber and mesocosm competition studies at current CO2 (cCO2; 400 ppm) and eCO2 over multiple generations. Using a suite of ecological, physiological, and molecular genomic tools, we show that a single-gene mutant of a key enzyme (nia2) elicited a highly orchestrated buffering response starting with a fivefold increase in the expression of a gene paralog (nia1) and a 63% increase in the expression of gene network module enriched for N-assimilation genes. The genetic perturbation reduced amino acids, protein, and TCA-cycle intermediate concentrations in the nia2 mutant compared to the wild-type, while eCO2 mainly increased carbohydrate concentrations. The mutant had reduced net photosynthetic rates due to a 27% decrease in carboxylation capacity and an 18% decrease in electron transport rates. The expression of these buffering mechanisms resulted in a penalty that negatively correlated with fitness and population dynamics yet showed only minor alterations in our estimates of population function, including total per unit area biomass, ground cover, and leaf area index. This study provides insight into the consequences of buffering mechanisms that occur post-genetic perturbations in the N pathway and the associated outcomes these buffering systems have on plant populations relative to eCO2.

  12. Scaling nitrogen and carbon interactions: What are the consequences of biological buffering?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Weston, David J.; Rogers, Alistair; Tschaplinski, Timothy J.; Gunter, Lee E.; Jawdy, Sara A.; Engle, Nancy L.; Heady, Lindsey E.; Tuskan, Gerald A.; Wullschleger, Stan D.

    2015-06-25

    Understanding the consequences of elevated CO2 (eCO2; 800 ppm) on terrestrial ecosystems is a central theme in global change biology, but relatively little is known about how altered plant C and N metabolism influences higher levels of biological organization. Here, we investigate the consequences of C and N interactions by genetically modifying the N-assimilation pathway in Arabidopsis and initiating growth chamber and mesocosm competition studies at current CO2 (cCO2; 400 ppm) and eCO2 over multiple generations. Using a suite of ecological, physiological, and molecular genomic tools, we show that a single-gene mutant of a key enzyme (nia2) elicited a highlymore » orchestrated buffering response starting with a fivefold increase in the expression of a gene paralog (nia1) and a 63% increase in the expression of gene network module enriched for N-assimilation genes. The genetic perturbation reduced amino acids, protein, and TCA-cycle intermediate concentrations in the nia2 mutant compared to the wild-type, while eCO2 mainly increased carbohydrate concentrations. The mutant had reduced net photosynthetic rates due to a 27% decrease in carboxylation capacity and an 18% decrease in electron transport rates. The expression of these buffering mechanisms resulted in a penalty that negatively correlated with fitness and population dynamics yet showed only minor alterations in our estimates of population function, including total per unit area biomass, ground cover, and leaf area index. As a result, this study provides insight into the consequences of buffering mechanisms that occur post-genetic perturbations in the N pathway and the associated outcomes these buffering systems have on plant populations relative to eCO2.« less

  13. Hafnium nitride buffer layers for growth of GaN on silicon

    DOE Patents [OSTI]

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  14. Using Whole-House Field Tests to Empirically Derive Moisture Buffering Model Inputs

    SciTech Connect (OSTI)

    Woods, J.; Winkler, J.; Christensen, D.; Hancock, E.

    2014-08-01

    Building energy simulations can be used to predict a building's interior conditions, along with the energy use associated with keeping these conditions comfortable. These models simulate the loads on the building (e.g., internal gains, envelope heat transfer), determine the operation of the space conditioning equipment, and then calculate the building's temperature and humidity throughout the year. The indoor temperature and humidity are affected not only by the loads and the space conditioning equipment, but also by the capacitance of the building materials, which buffer changes in temperature and humidity. This research developed an empirical method to extract whole-house model inputs for use with a more accurate moisture capacitance model (the effective moisture penetration depth model). The experimental approach was to subject the materials in the house to a square-wave relative humidity profile, measure all of the moisture transfer terms (e.g., infiltration, air conditioner condensate) and calculate the only unmeasured term: the moisture absorption into the materials. After validating the method with laboratory measurements, we performed the tests in a field house. A least-squares fit of an analytical solution to the measured moisture absorption curves was used to determine the three independent model parameters representing the moisture buffering potential of this house and its furnishings. Follow on tests with realistic latent and sensible loads showed good agreement with the derived parameters, especially compared to the commonly-used effective capacitance approach. These results show that the EMPD model, once the inputs are known, is an accurate moisture buffering model.

  15. Carbonic anhydrase-facilitated CO2 absorption with polyacrylamide buffering bead capture

    SciTech Connect (OSTI)

    Dilmore, Robert; Griffith, Craid; Liu, Zhu; Soong, Yee; Hedges, Sheila W.; Koepsel, Richard; Ataai, M [Ataai, Mohammad

    2009-07-01

    A novel CO2 separation concept is described wherein the enzyme carbonic anhydrase (CA) is used to increase the overall rate Of CO2 absorption after which hydrated CO2 reacts with regenerable amine-bearing polyacrylamide buffering beads (PABB). Following saturation of the material's immobilized tertiary amines, CA-bearing carrier water is separated and recycled to the absorption stage while CO2-loaded material is thermally regenerated. Process application of this concept would involve operation of two or more columns in parallel with thermal regeneration with low-pressure steam taking place after the capacity of a column of amine-bearing polymeric material was exceeded. PABB CO2- bearing capacity was evaluated by thermogravimetric analysis (TGA) for beads of three acrylamido buffering monomer ingredient concentrations: 0 mol/kg bead, 0.857 mol/kg bead, and 2 mol/kg bead. TGA results demonstrate that CO2- bearing capacity increases with increasing PABB buffering concentration and that up to 78% of the theoretical CO2- bearing capacity was realized in prepared PABB samples (0.857 mol/kg recipe). The highest observed CO2-bearing capacity of PABB was 1.37 mol of CO2 per kg dry bead. TGA was also used to assess the regenerability Of CO2-loaded PABB. Preliminary results suggest that CO2 is partially driven from PABB samples at temperatures as low as 55 degrees C, with complete regeneration occurring at 100 degrees C. Other physical characteristics of PABB are discussed. In addition, the effectiveness of bovine carbonic anhydrase for the catalysis Of CO2 dissolution is evaluated. Potential benefits and drawbacks of the proposed process are discussed. Published by Elsevier Ltd.

  16. Hydrogen responses of ultrathin Pd films and nanowire networks with a Ti buffer layer.

    SciTech Connect (OSTI)

    Zeng, X. Q.; Wang, Y. L.; Xiao, Z. L.; Latimer, M. L.; Xu, T.; Kwok, W. K.

    2012-01-01

    We report on hydrogen responses of ultrathin films and nanowire networks of palladium on titanium buffered silicon substrates and filtration membranes, respectively. We found that in both systems signatures such as retarding responses and saturation of the resistance changes at high hydrogen concentrations associated with the transition from Pd/H solid solution to Pd hydride diminish with decreasing the thickness of the palladium layer from 7 to 2 nm. Our results not only reveal a new way to suppress the phase transition in Pd/H system but also provide an alternative approach to achieve fast and sensitive hydrogen sensors with a wide concentration detection range.

  17. Understanding I/O Performance on Burst Buffers through Holistic I/O

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Characterization | Argonne Leadership Computing Facility Understanding I/O Performance on Burst Buffers through Holistic I/O Characterization Start Date: May 17 2016 - 10:00am to 11:00am Building/Room: Building 240/Room 4301 Location: Argonne National Laboratory Speaker(s): Glenn K. Lockwood Speaker(s) Title: NERSC's Advanced Technologies Group Host: Phil Carns Abstract: The I/O subsystems of extreme-scale computing systems are becoming more complex as they stratify into tiers optimized for

  18. High speed, very large (8 megabyte) first in/first out buffer memory (FIFO)

    DOE Patents [OSTI]

    Baumbaugh, Alan E.; Knickerbocker, Kelly L.

    1989-01-01

    A fast FIFO (First In First Out) memory buffer capable of storing data at rates of 100 megabytes per second. The invention includes a data packer which concatenates small bit data words into large bit data words, a memory array having individual data storage addresses adapted to store the large bit data words, a data unpacker into which large bit data words from the array can be read and reconstructed into small bit data words, and a controller to control and keep track of the individual data storage addresses in the memory array into which data from the packer is being written and data to the unpacker is being read.

  19. Buffer layers on metal surfaces having biaxial texture as superconductor substrates

    DOE Patents [OSTI]

    Paranthaman, Mariappan (Knoxville, TN); Lee, Dominic F. (Knoxville, TN); Kroeger, Donald M. (Knoxville, TN); Goyal, Amit (Knoxville, TN)

    2000-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /Ni, (RE=Rare Earth), RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /CeO.sub.2 /Ni, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /CeO.sub.2 /Cu, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approaches, which include chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

  20. Field measurement of moisture-buffering model inputs for residential buildings

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Woods, Jason; Winkler, Jon

    2016-02-05

    Moisture adsorption and desorption in building materials impact indoor humidity. This effect should be included in building-energy simulations, particularly when humidity is being investigated or controlled. Several models can calculate this moisture-buffering effect, but accurate ones require model inputs that are not always known to the user of the building-energy simulation. This research developed an empirical method to extract whole-house model inputs for the effective moisture penetration depth (EMPD) model. The experimental approach was to subject the materials in the house to a square-wave relative-humidity profile, measure all of the moisture-transfer terms (e.g., infiltration, air-conditioner condensate), and calculate the onlymore » unmeasured term—the moisture sorption into the materials. We validated this method with laboratory measurements, which we used to measure the EMPD model inputs of two houses. After deriving these inputs, we measured the humidity of the same houses during tests with realistic latent and sensible loads and demonstrated the accuracy of this approach. Furthermore, these results show that the EMPD model, when given reasonable inputs, is an accurate moisture-buffering model.« less

  1. Calcium manganate: A promising candidate as buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems

    SciTech Connect (OSTI)

    Zhao, Pengjun; Wang, Hongguang; Kong, Wenwen; Xu, Jinbao Wang, Lei; Ren, Wei; Bian, Liang; Chang, Aimin

    2014-11-21

    We have systematically studied the feasibility of CaMnO{sub 3} thin film, an n-type perovskite, to be utilized as the buffer layer for hybrid halide perovskite photovoltaic-thermoelectric device. Locations of the conduction band and the valence band, spontaneous polarization performance, and optical properties were investigated. Results indicate the energy band of CaMnO{sub 3} can match up well with that of CH{sub 3}NH{sub 3}PbI{sub 3} on separating electron-hole pairs. In addition, the consistent polarization angle helps enlarge the open circuit voltage of the composite system. Besides, CaMnO{sub 3} film shows large absorption coefficient and low extinction coefficient under visible irradiation, demonstrating high carrier concentration, which is beneficial to the current density. More importantly, benign thermoelectric properties enable CaMnO{sub 3} film to assimilate phonon vibration from CH{sub 3}NH3PbI{sub 3}. All the above features lead to a bright future of CaMnO{sub 3} film, which can be a promising candidate as a buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems.

  2. U-259: RSA BSAFE SSL-C Lets Remote Users Decrypt SSL/TLS Traffic and SSL

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Buffer Overflow Lets Remote Users Execute Arbitrary Code | Department of Energy 59: RSA BSAFE SSL-C Lets Remote Users Decrypt SSL/TLS Traffic and SSL Buffer Overflow Lets Remote Users Execute Arbitrary Code U-259: RSA BSAFE SSL-C Lets Remote Users Decrypt SSL/TLS Traffic and SSL Buffer Overflow Lets Remote Users Execute Arbitrary Code September 13, 2012 - 6:00am Addthis PROBLEM: RSA BSAFE SSL-C Lets Remote Users Decrypt SSL/TLS Traffic and SSL Buffer Overflow Lets Remote Users Execute

  3. U.S. DEPARTMENT OF ENERGY ENVIRONMENTAL IMPACT STATEMENTS AND ENVIRONMENTAL ASSESSMENTS

    Energy Savers [EERE]

    Buffer Overflow Lets Remote Users Execute Arbitrary Code | Department of Energy 59: RSA BSAFE SSL-C Lets Remote Users Decrypt SSL/TLS Traffic and SSL Buffer Overflow Lets Remote Users Execute Arbitrary Code U-259: RSA BSAFE SSL-C Lets Remote Users Decrypt SSL/TLS Traffic and SSL Buffer Overflow Lets Remote Users Execute Arbitrary Code September 13, 2012 - 6:00am Addthis PROBLEM: RSA BSAFE SSL-C Lets Remote Users Decrypt SSL/TLS Traffic and SSL Buffer Overflow Lets Remote Users Execute

  4. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  5. ZnO buffer layer for metal films on silicon substrates

    DOE Patents [OSTI]

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  6. Photoelectrochemical study of pitting on iron in borate buffer solution containing inhibitor

    SciTech Connect (OSTI)

    Yang, M.; Chen, L.; Cai, S.

    1997-01-01

    The photoelectrochemical behavior and the susceptibility of iron to pitting in borate buffer containing chloride ions (Cl{sup {minus}}) were investigated in the presence and absence of inhibitor PC-604, which is a mixture of polyhydric alcohol phosphoric easter and polyphosphoric ester of various molecular weights. Measurements of the band gap (E{sub g}) of the passive film on iron showed inhibitor concentration and passivation time did not interfere with E{sub g}. Photocurrent and photocurrent transients increased with increasing inhibitor quantities and passivation times at constant potential. The decay time-constant of the photocurrent transient was investigated as a specific parameter of the film. Data showed this parameter was related to pitting susceptibility of the passive film on iron.

  7. Executing scatter operation to parallel computer nodes by repeatedly broadcasting content of send buffer partition corresponding to each node upon bitwise OR operation

    DOE Patents [OSTI]

    Archer, Charles J.; Ratterman, Joseph D.

    2009-11-06

    Executing a scatter operation on a parallel computer includes: configuring a send buffer on a logical root, the send buffer having positions, each position corresponding to a ranked node in an operational group of compute nodes and for storing contents scattered to that ranked node; and repeatedly for each position in the send buffer: broadcasting, by the logical root to each of the other compute nodes on a global combining network, the contents of the current position of the send buffer using a bitwise OR operation, determining, by each compute node, whether the current position in the send buffer corresponds with the rank of that compute node, if the current position corresponds with the rank, receiving the contents and storing the contents in a reception buffer of that compute node, and if the current position does not correspond with the rank, discarding the contents.

  8. Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films

    DOE Patents [OSTI]

    Hankins, Matthew G.

    2009-10-06

    Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

  9. Evaluation of methods for application of epitaxial buffer and superconductor layers

    SciTech Connect (OSTI)

    1999-03-30

    The recent achievements of critical currents exceeding million amperes per square centimeter at 77K in YBCO deposited over suitably textured substrate have stimulated interest in the potential applications of coated conductors at high temperatures and in high magnetic fields. Currently, ion-beam assisted deposition (IBAD), and rolling assisted bi-axially textured substrate (RABiTS), represent two available options for obtaining textured substrates. For applying suitable coatings of buffer and high temperature superconductor (HTS) material over textured substrates, several options are available which include sputtering, electron-beam evaporation, laser ablation, electrophoresis, chemical vapor deposition (including metal organics chemical vapor deposition), sol-gel, metal organics decomposition, electrodeposition and aerosol/spray pyrolysis. A commercial continuous long-length wire/tape manufacturing scheme developed out of any suitable combination of the above techniques would consist of operations involving preparation of the substrate and application of buffer, HTS and passivation/insulation materials and special treatment steps such as post-annealing. These operations can be effected by various process parameters that can be classified into chemistry, materials, engineering and environmental related parameters. Under the DOE-sponsored program, to carry out an engineering evaluation, first, the process flow schemes were developed for various candidate options identifying the major operating steps, process conditions, and process streams. Next, to evaluate quantifiable parameters such as process severity (e.g. temperature and pressure), coating thickness and deposition rate for HTS material, achieved maximum J{sub c} value (for films >1{micro}m thick) and cost of chemical and material utilization efficiency, the multi-attribute method was used to determine attributes/merits for various parameters and candidate options. To determine similar attribute values for the non-quantifiable parameters, a subjective evaluation was used. Results of the two evaluations were then combined to calculate the overall merit/utility of a given option using weighting factors. To evaluate the effect of arbitrarily determined weighting factors, a sensitivity analysis was carried out by using three different sets of weighting factors. In the end, the results of the overall utility/merit values calculated using different sets of weighting factors were utilized to determine the preliminary ranking among the candidate options. As a result of this study, MOD, Sol-Gel, MOCVD, E-Beam and PLD options have been identified as the leading candidates for continuous, long-length processing of coated HTS conductors. However, there are several technical concerns related to each of these which need to be addressed first before a commercially viable option can be developed out of any one of them.

  10. Determination of effective axion masses in the helium-3 buffer of CAST

    SciTech Connect (OSTI)

    Ruz, J

    2011-11-18

    The CERN Axion Solar Telescope (CAST) is a ground based experiment located in Geneva (Switzerland) searching for axions coming from the Sun. Axions, hypothetical particles that not only could solve the strong CP problem but also be one of the favored candidates for dark matter, can be produced in the core of the Sun via the Primakoff effect. They can be reconverted into X-ray photons on Earth in the presence of strong electromagnetic fields. In order to look for axions, CAST points a decommissioned LHC prototype dipole magnet with different X-ray detectors installed in both ends of the magnet towards the Sun. The analysis of the data acquired during the first phase of the experiment yielded the most restrictive experimental upper limit on the axion-to-photon coupling constant for axion masses up to about 0.02 eV/c{sup 2}. During the second phase, CAST extends its mass sensitivity by tuning the electron density present in the magnetic field region. Injecting precise amounts of helium gas has enabled CAST to look for axion masses up to 1.2 eV/c{sup 2}. This paper studies the determination of the effective axion masses scanned at CAST during its second phase. The use of a helium gas buffer at temperatures of 1.8 K has required a detailed knowledge of the gas density distribution. Complete sets of computational fluid dynamic simulations validated with experimental data have been crucial to obtain accurate results.

  11. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect (OSTI)

    Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1; Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 ; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.; Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7; Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7

    2013-09-21

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  12. Growth modes of InN(000-1) on GaN buffer layers on sapphire

    SciTech Connect (OSTI)

    Liu, Bing; Kitajima, Takeshi; Chen, Dongxue; Leone, Stephen R.

    2005-01-24

    In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesa-like with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered.

  13. Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

    SciTech Connect (OSTI)

    Nandi, R. Mohan, S. Major, S. S.; Srinivasa, R. S.

    2014-04-24

    ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

  14. Production of cold beams of ND{sub 3} with variable rotational state distributions by electrostatic extraction of He and Ne buffer-gas-cooled beams

    SciTech Connect (OSTI)

    Twyman, Kathryn S.; Bell, Martin T.; Heazlewood, Brianna R.; Softley, Timothy P.

    2014-07-14

    The measurement of the rotational state distribution of a velocity-selected, buffer-gas-cooled beam of ND{sub 3} is described. In an apparatus recently constructed to study cold ion-molecule collisions, the ND{sub 3} beam is extracted from a cryogenically cooled buffer-gas cell using a 2.15 m long electrostatic quadrupole guide with three 90 bends. (2+1) resonance enhanced multiphoton ionization spectra of molecules exiting the guide show that beams of ND{sub 3} can be produced with rotational state populations corresponding to approximately T{sub rot} = 918 K, achieved through manipulation of the temperature of the buffer-gas cell (operated at 6 K or 17 K), the identity of the buffer gas (He or Ne), or the relative densities of the buffer gas and ND{sub 3}. The translational temperature of the guided ND{sub 3} is found to be similar in a 6 K helium and 17 K neon buffer-gas cell (peak kinetic energies of 6.92(0.13) K and 5.90(0.01) K, respectively). The characterization of this cold-molecule source provides an opportunity for the first experimental investigations into the rotational dependence of reaction cross sections in low temperature collisions.

  15. Parallel log structured file system collective buffering to achieve a compact representation of scientific and/or dimensional data

    DOE Patents [OSTI]

    Grider, Gary A.; Poole, Stephen W.

    2015-09-01

    Collective buffering and data pattern solutions are provided for storage, retrieval, and/or analysis of data in a collective parallel processing environment. For example, a method can be provided for data storage in a collective parallel processing environment. The method comprises receiving data to be written for a plurality of collective processes within a collective parallel processing environment, extracting a data pattern for the data to be written for the plurality of collective processes, generating a representation describing the data pattern, and saving the data and the representation.

  16. EXAMINATION OF DISLOCATIONS IN LATTICE-MISMATCHED GaInAs/BUFFER LAYER/GaAs FOR III-V PHOTOVOLTAICS

    SciTech Connect (OSTI)

    Levander, A.; Geisz, J.

    2007-01-01

    Dislocations act as sites for nonradiative electron/hole pair recombination, which reduces the effi ciency of photovoltaics. Lattice-matched materials can be grown on top of one another without forming a high density of dislocations. However, when the growth of lattice-mismatched (LMM) materials is attempted, many dislocations result from the relaxation of strain in the crystal structure. In an attempt to reduce the number of dislocations that propagate into a solar device when using LMM materials, a compositionally step-graded buffer is placed between the two LMM materials. In order to confi ne the dislocations to the buffer layer and therefore increase material quality and device effi ciency, the growth temperature and thickness of the buffer layer were varied. A GaInP compositionally graded buffer and GaInAs p-n junction were grown on a GaAs substrate in a metal-organic chemical vapor deposition (MOCVD) system. A multibeam optical stress sensor (MOSS) and X-ray diffraction (XRD) were used to characterize the strain in the epilayers. Electrical and optoelectronic properties were measured using a probe station and multimeter setup, solar simulator, and a quantum effi ciency instrument. It was determined that device functionality was highly dependent on the growth temperature of the graded buffer. As growth temperature increased, so did the dislocation density in the device despite an increase in the dislocation velocity, which should have increased the dislocation annihilation rate and the diffusion of dislocations to the edge of the crystal. The thickness of the graded buffer also affected device effi ciency with thinner samples performing poorly. The thinner graded buffer layers had high internal resistances from reduced carrier concentrations. In terms of effi ciency, the empirically derived recipe developed by the scientists at the National Renewable Energy Laboratory (NREL) produced the highest quality cells.

  17. Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency

    SciTech Connect (OSTI)

    Cerio, Frank

    2013-09-14

    The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm{sup 2} using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance was analyzed and improvements implemented to the Veeco PVD-AlN prototype system to establish a specification and baseline PVD-AlN films on sapphire and in parallel the evaluation of PVD AlN on silicon substrates began. In Phase II of the project a Beta tool based on a scaled-up process module capable of depositing uniform films on batches of 4”or 6” diameter substrates in a production worthy operation was developed and qualified. In Phase III, the means to increase the throughput of the PVD-AlN system was evaluated and focused primarily on minimizing the impact of the substrate heating and cooling times that dominated the overall cycle time.

  18. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  19. U. S. DEPARTMENT OF ENERGY OFFICE OF HEARINGS AND APPEALS DECISION AND ORDER

    Energy Savers [EERE]

    Vulnerability | Department of Energy 4: IBM Rational ClearQuest ActiveX Control Buffer Overflow Vulnerability U-154: IBM Rational ClearQuest ActiveX Control Buffer Overflow Vulnerability April 24, 2012 - 7:00am Addthis PROBLEM: IBM Rational ClearQuest ActiveX Control Buffer Overflow Vulnerability PLATFORM: Versions 7.1.1 through 7.1.2.5, 8.0, and 8.0.0.1. ABSTRACT: A vulnerability was reported in IBM Rational ClearQuest. A remote user can cause arbitrary code to be executed on the target

  20. Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Brubaker, Matt D.; Rourke, Devin M.; Sanford, Norman A.; Bertness, Kris A.; Bright, Victor M.

    2011-09-01

    Low-temperature AlN buffer layers grown via plasma-assisted molecular beam epitaxy on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions, with their size, shape, and tilt determined by the AlN V/III flux ratio. GaN nanowires were frequently observed to adopt the structural characteristics of the underlying AlN columns, including the size and the degree of tilt. Piezoresponse force microscopy and polarity-sensitive etching indicate that the AlN films and the protruding columns have a mixed crystallographic polarity. Convergent beam electron diffraction indicates that GaN nanowires are Ga-polar, suggesting that Al-polar columns are nanowire nucleation sites for Ga-polar nanowires. GaN nanowires of low density could be grown on AlN buffers that were predominantly N-polar with isolated Al-polar columns, indicating a high growth rate for Ga-polar nanowires and suppressed growth of N-polar nanowires under typical growth conditions. AlN buffer layers grown under slightly N-rich conditions (V/III flux ratio = 1.0 to 1.3) were found to provide a favorable growth surface for low-density, coalescence-free nanowires.

  1. U-259: RSA BSAFE SSL-C Lets Remote Users Decrypt SSL/TLS Traffic...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    BSAFE SSL-C Lets Remote Users Decrypt SSLTLS Traffic and SSL Buffer Overflow Lets Remote Users Execute Arbitrary Code U-259: RSA BSAFE SSL-C Lets Remote Users Decrypt SSLTLS ...

  2. U-152: OpenSSL "asn1_d2i_read_bio()" DER Format Data Processing Vulnerability

    Broader source: Energy.gov [DOE]

    The vulnerability is caused due to a type casting error in the "asn1_d2i_read_bio()" function when processing DER format data and can be exploited to cause a heap-based buffer overflow.

  3. T-568: Mozilla Firefox Bugs Let Remote Users Conduct Cross-Site...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    execute arbitrary code. 4) An error within the internal memory mapping of non-local JavaScript variables can be exploited to cause a buffer overflow and potentially execute...

  4. T-551: Cisco Security Advisory: Multiple Cisco WebEx Player Vulnerabilities

    Broader source: Energy.gov [DOE]

    Multiple buffer overflow vulnerabilities exist in the WRF and ARF players. The vulnerabilities may lead to a crash of the player application or, in some cases, remote code execution could occur.

  5. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    SciTech Connect (OSTI)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

    2014-09-15

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300?nm GaN/ 200?nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8??10{sup 12} to 2.1 10{sup 13} cm{sup ?2} as the AlN barrier thickness increased from 2.2 to 4.5?nm, while a 4.5?nm AlN barrier would result to 3.1??10{sup 13} cm{sup ?2} on a GaN buffer layer. The 3.0?nm AlN barrier structure exhibited the highest 2DEG mobility of 900?cm{sup 2}/Vs for a density of 1.3??10{sup 13} cm{sup ?2}. The results were also confirmed by the performance of 1??m gate-length transistors. The scaling of AlN barrier thickness from 1.5?nm to 4.5?nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63?A/mm. The maximum drain-source current was 1.1?A/mm for AlN barrier thickness of 3.0?nm and 3.7?nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0?nm AlN barrier.

  6. Enhanced photocatalytic efficiency in zirconia buffered n-NiO/p-NiO single crystalline heterostructures by nanosecond laser treatment

    SciTech Connect (OSTI)

    Molaei, R.; Bayati, M. R.; Alipour, H. M.; Nori, S.; Narayan, J.

    2013-06-21

    We report the formation of NiO based single crystalline p-n junctions with enhanced photocatalytic activity induced by pulsed laser irradiation. The NiO epilayers were grown on Si(001) substrates buffered with cubic yttria-stabilized zirconia (c-YSZ) by using pulsed laser deposition. The NiO/c-YSZ/Si heterostructures were subsequently laser treated by 5 pulses of KrF excimer laser (pulse duration = 25 Multiplication-Sign 10{sup -9} s) at lower energies. Microstructural studies, conducted by X-ray diffraction ({theta}-2{theta} and {phi} techniques) and high resolution transmission electron microscope, showed a cube-on-cube epitaxial relationship at the c-YSZ/Si interface; the epitaxial relationship across the NiO/c-YSZ interface was established as NiO<111 > Double-Vertical-Line Double-Vertical-Line c-YSZ<001> and in-plane NiO<110> Double-Vertical-Line Double-Vertical-Line c-YSZ<100>. Electron microscopy studies showed that the interface between the laser annealed and the pristine region as well as the NiO/c-YSZ interface was atomically sharp and crystallographically continuous. The formation of point defects, namely oxygen vacancies and NiO, due to the coupling of the laser photons with the NiO epilayers was confirmed by XPS. The p-type electrical characteristics of the pristine NiO epilayers turned to an n-type behavior and the electrical conductivity was increased by one order of magnitude after laser treatment. Photocatalytic activity of the pristine (p-NiO/c-YSZ/Si) and the laser-annealed (n-NiO/p-NiO/c-YSZ/Si) heterostructures were assessed by measuring the decomposition rate of 4-chlorophenol under UV light. The photocatalytic reaction rate constants were determined to be 0.0059 and 0.0092 min{sup -1} for the as-deposited and the laser-treated samples, respectively. The enhanced photocatalytic efficiency was attributed to the suppressed charge carrier recombination in the NiO based p-n junctions and higher electrical conductivity. Besides, the oxygen vacancies ease the adsorption of 4-chlorophenol, hydroxyl, and water molecules to the surface. Thus, n-NiO/p-NiO single crystalline catalysts can be introduced as a potent candidate to remediate the environmental pollution.

  7. Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructure on Si(111)

    SciTech Connect (OSTI)

    Chowdhury, Subhra; Biswas, Dhrubes

    2015-02-23

    This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600?nm, 400?nm, and 200?nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5?nm, In{sub 0.17}Al{sub 0.83}N1.25?nm, GaN1.5?nm, In{sub 0.17}Al{sub 0.83}N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 10{sup 10?}cm{sup ?2} to 10{sup 8?}cm{sup ?2} with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure. Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89?nm, 1.2?nm, and 1.45?nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs.

  8. V-213: PuTTY SSH Handshake Integer Overflow Vulnerabilities ...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    source code repository Addthis Related Articles V-222: SUSE update for Filezilla V-157: Adobe Reader Acrobat Multiple Vulnerabilities V-066: Adobe AcrobatReader Multiple Flaws...

  9. T-588: HP Virtual SAN Appliance Stack Overflow

    Broader source: Energy.gov [DOE]

    A vulnerability has been reported in HP StorageWorks P4000 Virtual SAN Appliance Software, which can be exploited by malicious people to compromise a vulnerable system.

  10. U-202: Apple QuickTime Multiple Stack Overflow Vulnerabilities

    Broader source: Energy.gov [DOE]

    Visiting a maliciously crafted website may lead to an unexpected application termination or arbitrary code execution.

  11. V-074: IBM Informix Genero libpng Integer Overflow Vulnerability...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    or display a malicious PNG file, your IBM Informix Genero application might crash, or could be caused to run malicious code with the privileges of the user running the application. ...

  12. Influence of the finite linewidth of the laser radiation spectrum on the shape of the coherent population trapping resonance line in an optically dense medium with a buffer gas

    SciTech Connect (OSTI)

    Barantsev, K. A. Popov, E. N.; Litvinov, A. N.

    2015-11-15

    The theory of coherent population trapping resonance is developed for the finite linewidth of the laser radiation spectrum in an optically dense medium of Λ atoms in a cell with a buffer gas. Equations are derived for the atomic density matrix and laser emission spectrum transfer in a cell with working and buffer gases at a finite temperature. The dependence of the quality factor of coherent population trapping resonance on the linewidth of the laser radiation spectrum is studied by measuring transmitted radiation and fluorescence signals.

  13. Enhanced electrical and magnetic properties in La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films deposited on CaTiO{sub 3}-buffered silicon substrates

    SciTech Connect (OSTI)

    Adamo, C.; Méchin, L.; Guillet, B.; Wu, S.; Routoure, J.-M.; Heeg, T.; Katz, M.; Pan, X. Q.; Mercone, S.; Schubert, J.; Zander, W.; Misra, R.; Schiffer, P.; and others

    2015-06-01

    We investigate the suitability of an epitaxial CaTiO{sub 3} buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La{sub 0.7}Sr{sub 0.3}MnO{sub 3} with silicon. The magnetic and electrical properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films deposited by MBE on CaTiO{sub 3}-buffered silicon (CaTiO{sub 3}/Si) are compared with those deposited on SrTiO{sub 3}-buffered silicon (SrTiO{sub 3}/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO{sub 3} buffer layer. These results are relevant to device applications of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films on silicon substrates.

  14. Epitaxial c-axis oriented BaTiO{sub 3} thin films on SrTiO{sub 3}-buffered Si(001) by atomic layer deposition

    SciTech Connect (OSTI)

    Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G., E-mail: ekerdt@che.utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Posadas, Agham B.; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States); Hu, Chengqing; Yu, Edward T. [Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Bruley, John [IBM Research Division, Yorktown Heights, New York 10593 (United States)

    2014-02-24

    Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO{sub 3} (BTO) on Si(001) using a thin (1.6?nm) buffer layer of SrTiO{sub 3} (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225??C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600??C. Two-dimensional XRD confirms the tetragonal structure and orientation of 720-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 720?nm-thick BTO films are examined and show an effective dielectric constant of ?660 for the heterostructure.

  15. Structural characterisation of BaTiO{sub 3} thin films deposited on SrRuO{sub 3}/YSZ buffered silicon substrates and silicon microcantilevers

    SciTech Connect (OSTI)

    Colder, H.; Jorel, C. Mchin, L.; Domengs, B.; Marie, P.; Boisserie, M.; Guillon, S.; Nicu, L.; Galdi, A.

    2014-02-07

    We report on the progress towards an all epitaxial oxide layer technology on silicon substrates for epitaxial piezoelectric microelectromechanical systems. (101)-oriented epitaxial tetragonal BaTiO{sub 3} (BTO) thin films were deposited at two different oxygen pressures, 5.10{sup ?2} mbar and 5.10{sup ?3} mbar, on SrRuO{sub 3}/Yttria-stabilized zirconia (YSZ) buffered silicon substrates by pulsed laser deposition. The YSZ layer full (001) orientation allowed the further growth of a fully (110)-oriented conductive SrRuO{sub 3} electrode as shown by X-ray diffraction. The tetragonal structure of the BTO films, which is a prerequisite for the piezoelectric effect, was identified by Raman spectroscopy. In the BTO film deposited at 5.10{sup ?2} mbar strain was mostly localized inside the BTO grains whereas at 5.10{sup ?3} mbar, it was localized at the grain boundaries. The BTO/SRO/YSZ layers were finally deposited on Si microcantilevers at an O{sub 2} pressure of 5.10{sup ?3} mbar. The strain level was low enough to evaluate the BTO Young modulus. Transmission electron microscopy (TEM) was used to investigate the epitaxial quality of the layers and their epitaxial relationship on plain silicon wafers as well as on released microcantilevers, thanks to Focused-Ion-Beam TEM lamella preparation.

  16. Power-dependent microwave properties of superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} films on buffered polycrystalline substrates

    SciTech Connect (OSTI)

    Findikoglu, A.T.; Arendt, P.N.; Foltyn, S.R.; Groves, J.R.; Jia, Q.X.; Peterson, E.J.; Bulaevskii, L.; Maley, M.P.; Reagor, D.W.

    1997-06-01

    We have studied the microwave properties of 0.4 {mu}m thick YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO) films on polycrystalline substrates with ion-beam-assisted-deposited yttria-stabilized zirconia buffer layers using a parallel-plate resonator technique at 10 GHz. The YBCO films with similar in-plane texture grown on both forsterite and Ni-based alloy substrates show similar microwave properties. We measure low-power surface resistance R{sub s} values of about 0.5 m{Omega} at 76 K and 0.15 m{Omega} at 4 K for films with an in-plane mosaic spread of about 7{degree}. Single-tone power-dependence measurements show that the surface resistance and the surface reactance increase linearly and by the same amount with increasing microwave field level. At intermediate power levels, the intermodulation measurements show odd-order intermodulation products that increase quadratically with two-tone input power. These results indicate a hysteretic vortex penetration mechanism in the weak links as the most plausible source of the observed nonlinearities in these films. {copyright} {ital 1997 American Institute of Physics.}

  17. Microstructural evaluation of Sb-adjusted Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer layer systems for IR applications

    SciTech Connect (OSTI)

    Chen, E.; Paine, D.C.; Uppal, P.; Ahearn, J.S.; Nichols, K.; Charache, G.W.

    1998-06-01

    The authors report on a transmission electron microscopy (TEM) study of Sb-adjusted quaternary Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBE at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBe at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} is successively increased in a series of 125 nm thick layers. Post growth analysis using conventional bright field and weak beam dark field imaging of these buffer layers in cross-section reveals that the interface misfit dislocations are primarily of the 60{degree} type and are distributed through out the interfaces of the buffer layer. When optimized, the authors have shown, using plan view and cross-sectional TEM, that this approach can reduce the threading defect density to below the detectability limit of TEM (< 10{sup 5}/cm{sup 2}) and preserve growth surface planarity. The Sb-graded approach was used to fabricate two 2.2 {micro}m power converter structures fabricated using InGaAs grown on Sb-based buffer layers on GaAs substrates. A microstructural and electrical characterization was performed on these device structures and the results are contrasted with a sample in which InP was selected as the substrate. Microstructure, defect density and device performance in these not-yet-optimized Sb-based buffer layers compares favorably to equivalent devices fabricated using InP substrates.

  18. Burst Buffer Early User Program

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SLAC (BESBER) NERSC-supported: Existing Engagements * ALICE data analysis, Jeff Porter, Berkeley Lab (NP) * Tractor: Cosmological data analysis (DESI), Peter Nugent,...

  19. Burst Buffer Early User Program

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    * Chombo-Crunch + VisIt for carbon sequestration, David Trebotich, Berkeley Lab (BES) * SigmaUniFamSipros bioinformatics codes, Chongle Pan, Oak Ridge National Laboratory (BER)...

  20. Buffer layers for coated conductors

    DOE Patents [OSTI]

    Stan, Liliana; Jia, Quanxi; Foltyn, Stephen R.

    2011-08-23

    A composite structure is provided including a base substrate, an IBAD oriented material upon the base substrate, and a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material. Additionally, an article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and a thick film upon the cubic metal oxide material. Finally, a superconducting article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and an yttrium barium copper oxide material upon the cubic metal oxide material.

  1. Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

    SciTech Connect (OSTI)

    Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo; Fin, Samuele; Guidi, Vincenzo; Vincenzi, Donato

    2014-09-26

    A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers.

  2. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J.; Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menndez, J.; Aoki, Toshihiro

    2014-10-07

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamondcubic lattice.

  3. Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

    SciTech Connect (OSTI)

    Krishnaprasad, P. S. E-mail: mkj@cusat.ac.in; Jayaraj, M. K. E-mail: mkj@cusat.ac.in; Antony, Aldrin; Rojas, Fredy

    2015-03-28

    Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ?-2?, ?-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BST thin films show significantly improved tunable performance over polycrystalline thin films.

  4. Weatherization and Intergovernmental Programs Office | Department of Energy

    Energy Savers [EERE]

    Utility-Scale Solar through the Years Utility-Scale Solar through the Years 1984 Start Slow Stop Year Solar Plants Homes Powered 682 Solar Plants Online. Enough to Power 1.7 M Homes Source: Preliminary data from the 2013 EIA-860 report Users Execute Arbitrary Code | Department of Energy

    8: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote Users Execute Arbitrary Code V-228: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote Users Execute Arbitrary Code

  5. V.K. Utyonkov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Users Execute Arbitrary Code | Department of Energy 8: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote Users Execute Arbitrary Code V-228: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote Users Execute Arbitrary Code August 27, 2013 - 6:00am Addthis PROBLEM: Two vulnerabilities were reported in RealPlayer PLATFORM: RealPlayer 16.0.2.32 and prior ABSTRACT: A remote user can cause arbitrary code to be executed on the target user's system REFERENCE LINKS:

  6. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

    SciTech Connect (OSTI)

    Szyszka, A. E-mail: adam.szyszka@pwr.wroc.pl; Haeberlen, M.; Storck, P.; Thapa, S. B.; Schroeder, T.

    2014-08-28

    Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated thatwith respect to the basic GaN/oxide/Si system without DBRthe insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

  7. Microwave surface resistance of YBa{sub 2}Cu{sub 3}Cu{sub 3}O{sub 7{minus}{ital x}} films on polycrystalline ceramic substrates with textured buffer layers

    SciTech Connect (OSTI)

    Findikoglu, A.T.; Foltyn, S.R.; Arendt, P.N.; Groves, J.R.; Jia, Q.X.; Peterson, E.J.; Wu, X.D.; Reagor, D.W.

    1996-09-01

    We have used a parallel-plate resonator technique to measure the microwave surface resist- ance {ital R}{sub {ital s}} of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} (YBCO) films on buffered ceramic substrates at around 10 GHz, and studied the correlation between their {ital R}{sub {ital s}} and materials properties. A 0.4-{mu}m-thick YBCO film (with an in-plane mosaic spread of 7{degree}) grown on a polycrystalline alumina substrate with an ion-beam-assisted-deposited yttria-stabilized zirconia buffer layer showed an {ital R}{sub {ital s}} of 1.89 m{Omega} at 76 K and 0.21 m{Omega} at 4 K. We have observed a strong correlation between the {ital R}{sub {ital s}} of the samples and the in-plane mosaic spread of the YBCO films. This correlation can be explained qualitatively in terms of a simple model in which the weak links between the grains of the YBCO film form an electrical network of Josephson junctions.

  8. Néel temperature of Cr{sub 2}O{sub 3} in Cr{sub 2}O{sub 3}/Co exchange-coupled system: Effect of buffer layer

    SciTech Connect (OSTI)

    Pati, Satya Prakash E-mail: phy-satya@yahoo.co.in; Shimomura, Naoki; Nozaki, Tomohiro; Sahashi, Masashi; Shibata, Tatsuo

    2015-05-07

    The lattice parameter dependence of the Néel temperature T{sub N} of thin Cr{sub 2}O{sub 3} in a Cr{sub 2}O{sub 3}/Co exchange-coupled system is investigated. Lattice-mismatch-induced strain is generated in Cr{sub 2}O{sub 3} by using different buffer layers. The lattice parameters are determined from out-of-plane and in-plane X-ray diffraction measurements. The Néel temperature is detected by direct temperature-dependent magnetization measurement as well as the temperature-dependent interface exchange coupling energy. It is observed that in-plane lattice contraction can enhance T{sub N} in Cr{sub 2}O{sub 3}, which is consistent with theoretical calculations.

  9. T-543: Wireshark 0.8.20 through 1.2.8 Multiple Vulnerabilities

    Broader source: Energy.gov [DOE]

    Wireshark is prone to multiple denial-of-service and buffer-overflow vulnerabilities. Exploiting these issues may allow attackers to crash the application and deny service to legitimate users. Attackers may also execute arbitrary code in the context of vulnerable users running the application.

  10. U-080: Linux Kernel XFS Heap Overflow May Let Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in the Linux Kernel. A remote user can cause arbitrary code to be executed on the target user's system.

  11. Storm and combined sewer overflow: An overview of EPA's Research Program. Book chapter

    SciTech Connect (OSTI)

    Field, R.

    1993-01-01

    The report represents an overview of the EPA's Storm and Combined Sewer Pollution Control Research Program performed over a 20-year period beginning with the mid-1960s. It covers Program involvements in the development of a diverse technology including pollution-problem assessment/solution methodology and associated instrumentation and stormwater management models, best management practices, erosion control, infiltration/inflow, control, control-treatment technology and the associated sludge and solids residuals handling and many others.

  12. U-236: Microsoft JScript and VBScript Engine Integer Overflow Lets Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    Execution of arbitrary code via network A remote user can cause arbitrary code to be executed on the target

  13. Yttria-stabilized zirconia buffered silicon to optimize in-plane electrical conductivity of [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] thin films

    SciTech Connect (OSTI)

    Kraus, T.; Griesser, A.; Klein, O.; Fischer, M.; Schreck, M.; Karl, H.

    2014-05-05

    The monolithic integration of thermoelectric generators and magnetoresistive functionality on the basis of misfit cobaltate [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] thin films into silicon technology is a prerequisite for their application in miniaturized electric circuits. Here, we report on [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] thin films grown by pulsed laser deposition on (001)-silicon with a thin epitaxial yttria-stabilized zirconia (YSZ) buffer layer. X-ray diffraction and cross-sectional high resolution transmission electron microscopy analysis reveal that high quality c-axis oriented heteroepitaxial [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] films with a 12-fold in-plane rotational symmetry can be grown, which exhibit remarkable lower electrical resistivity compared to those with random in-plane orientation. This result is explained by energetically preferred epitaxial growth directions of the pseudo hexagonal [CoO{sub 2}] sublayer in monoclinic [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] onto the cubic (001)-YSZ surface leading to a highly symmetric in-plane mutual orientation of the charge transporting CoO{sub 2} sublayer domains.

  14. Rapid screening buffer layers in photovoltaics

    DOE Patents [OSTI]

    List, III, Frederick Alyious; Tuncer, Enis

    2014-09-09

    An apparatus and method of testing electrical impedance of a multiplicity of regions of a photovoltaic surface includes providing a multi-tipped impedance sensor with a multiplicity of spaced apart impedance probes separated by an insulating material, wherein each impedance probe includes a first end adapted for contact with a photovoltaic surface and a second end in operable communication with an impedance measuring device. The multi-tipped impedance sensor is used to contact the photovoltaic surface and electrical impedance of the photovoltaic material is measured between individual first ends of the probes to characterize the quality of the photovoltaic surface.

  15. Universal null DTE

    DOE Patents [OSTI]

    George, Michael; Pierson, Lyndon G.; Wilkins, Mark E.

    1989-01-01

    A communication device in the form of data terminal equipment permits two data communication equipments, each having its own master clock and operating at substantially the same nominal clock rate, to communicate with each other in a multi-segment circuit configuration of a general communication network even when phase or frequency errors exist between the two clocks. Data transmitted between communication equipments of two segments of the communication network is buffered. A variable buffer fill circuit is provided to fill the buffer to a selectable extent prior to initiation of data output clocking. Selection switches are provided to select the degree of buffer preload. A dynamic buffer fill circuit may be incorporated for automatically selecting the buffer fill level as a function of the difference in clock frequencies of the two equipments. Controllable alarm circuitry is provided for selectively generating an underflow or an overflow alarm to one or both of the communicating equipments.

  16. Universal null DTE (data terminal equipment)

    DOE Patents [OSTI]

    George, M.; Pierson, L.G.; Wilkins, M.E.

    1987-11-09

    A communication device in the form of data terminal equipment permits two data communication equipments, each having its own master clock and operating at substantially the same nominal clock rate, to communicate with each other in a multi-segment circuit configuration of a general communication network even when phase or frequency errors exist between the two clocks. Data transmitted between communication equipments of two segments of the communication network is buffered. A variable buffer fill circuit is provided to fill the buffer to a selectable extent prior to initiation of data output clocking. Selection switches are provided to select the degree of buffer preload. A dynamic buffer fill circuit may be incorporated for automatically selecting the buffer fill level as a function of the difference in clock frequencies of the two equipments. Controllable alarm circuitry is provided for selectively generating an underflow or an overflow alarm to one or both of the communicating equipments. 5 figs.

  17. Dielectric properties of <001>-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on polycrystalline metal tapes using biaxially oriented MgO/{gamma}-Al{sub 2}O{sub 3} buffer layers

    SciTech Connect (OSTI)

    Choi, W.; Kang, B.S.; Jia, Q.X.; Matias, V.; Findikoglu, A.T.

    2006-02-06

    We report the growth of <001>-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films on polycrystalline Ni-alloy tapes by pulsed laser deposition using biaxially oriented, ion-beam-assisted deposited (IBAD) MgO and {gamma}-Al{sub 2}O{sub 3} buffer layers. Dielectric constant values of our BST films were up to {approx}85% of those in the epitaxial films prepared under similar conditions on single-crystal MgO substrates. No significant dispersion of the dielectric constant was observed for frequencies from 100 Hz to 1 MHz. These results demonstrate the versatility of using IBAD-textured MgO and {gamma}-Al{sub 2}O{sub 3} buffer layers to integrate highly oriented good-quality BST films with nonsingle-crystalline substrates.

  18. SMOOTH OIL & GAS FIELD OUTLINES MADE FROM BUFFERED WELLS

    U.S. Energy Information Administration (EIA) Indexed Site

    The VBA code provided at the bottom of this document is an updated version (from ArcGIS ... but with "smu" suffix added to name. The first layer must contain the well points ...

  19. Dosage compensation can buffer copy-number variation in wild...

    Office of Scientific and Technical Information (OSTI)

    Publisher: eLife Sciences Publications, Ltd. Sponsoring Org: USDOE Country of Publication: United States Language: English Word Cloud More Like This Free Publicly Accessible Full ...

  20. Buffer layers on biaxially textured metal substrates (Patent...

    Office of Scientific and Technical Information (OSTI)

    oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing... biaxially; oriented; metal; substrate; sol-gel; coating; technique; followed; pyrolyzing; ...

  1. Buffer layer for thin film structures (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Inventors: Foltyn, Stephen R. ; Jia, Quanxi ; Arendt, Paul N. ; Wang, Haiyan Issue Date: 2010-06-15 OSTI Identifier: 1176358 Assignee: Los Alamos National Security, LLC (Los ...

  2. Regeneratively cooled transition duct with transversely buffered impingement nozzles

    DOE Patents [OSTI]

    Morrison, Jay A; Lee, Ching-Pang; Crawford, Michael E

    2015-04-21

    A cooling arrangement (56) having: a duct (30) configured to receive hot gases (16) from a combustor; and a flow sleeve (50) surrounding the duct and defining a cooling plenum (52) there between, wherein the flow sleeve is configured to form impingement cooling jets (70) emanating from dimples (82) in the flow sleeve effective to predominately cool the duct in an impingement cooling zone (60), and wherein the flow sleeve defines a convection cooling zone (64) effective to cool the duct solely via a cross-flow (76), the cross-flow comprising cooling fluid (72) exhausting from the impingement cooling zone. In the impingement cooling zone an undimpled portion (84) of the flow sleeve tapers away from the duct as the undimpled portion nears the convection cooling zone. The flow sleeve is configured to effect a greater velocity of the cross-flow in the convection cooling zone than in the impingement cooling zone.

  3. V-169: Linux Kernel "iscsi_add_notunderstood_response()" Buffer...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    has been reported in Linux Kernel. REFERENCE LINKS: Secunia Advisory SA53670 Red Hat Bugzilla - Bug 968036 CVE-2013-2850 IMPACT ASSESSMENT: Medium DISCUSSION: The...

  4. Architecture and method for a burst buffer using flash technology

    DOE Patents [OSTI]

    Tzelnic, Percy; Faibish, Sorin; Gupta, Uday K.; Bent, John; Grider, Gary Alan; Chen, Hsing-bung

    2016-03-15

    A parallel supercomputing cluster includes compute nodes interconnected in a mesh of data links for executing an MPI job, and solid-state storage nodes each linked to a respective group of the compute nodes for receiving checkpoint data from the respective compute nodes, and magnetic disk storage linked to each of the solid-state storage nodes for asynchronous migration of the checkpoint data from the solid-state storage nodes to the magnetic disk storage. Each solid-state storage node presents a file system interface to the MPI job, and multiple MPI processes of the MPI job write the checkpoint data to a shared file in the solid-state storage in a strided fashion, and the solid-state storage node asynchronously migrates the checkpoint data from the shared file in the solid-state storage to the magnetic disk storage and writes the checkpoint data to the magnetic disk storage in a sequential fashion.

  5. SMOOTH OIL & GAS FIELD OUTLINES MADE FROM BUFFERED WELLS

    U.S. Energy Information Administration (EIA) Indexed Site

    ... ' put the name of the field being processed in the caption, that ' way if there is a crash, we can select that field and ' step through the program and debug it more easily. ...

  6. T-639: Debian update for libxml2 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    9: Debian update for libxml2 T-639: Debian update for libxml2 June 7, 2011 - 3:35pm Addthis PROBLEM: libxml2 is vulnerable to buffer overflows, which allowed a crafted XML input file to potentially execute arbitrary code. PLATFORM: Package: libxml2 version 2.7.8. Other versions may also be affected ABSTRACT: Libxml2 XPath Nodeset Processing Vulnerability reference LINKS: Secunia Advisory: SA44817 Secunia Advisory: SA44711 DSA 2255-1 Vulnerability Report: Debian GNU/Linux 6.0 Download Package

  7. Experimental Study of High-Z Gas Buffers in Gas-Filled ICF Engines

    SciTech Connect (OSTI)

    Rhodes, M A; Kane, J; Loosmore, G; DeMuth, J; Latkowski, J

    2010-12-03

    ICF power plants, such as the LIFE scheme at LLNL, may employ a high-Z, target-chamber gas-fill to moderate the first-wall heat-pulse due to x-rays and energetic ions released during target detonation. To reduce the uncertainties of cooling and beam/target propagation through such gas-filled chambers, we present a pulsed plasma source producing 2-5 eV plasma comprised of high-Z gases. We use a 5-kJ, 100-ns theta discharge for high peak plasma-heating-power, an electrode-less discharge for minimizing impurities, and unobstructed axial access for diagnostics and beam (and/or target) propagation studies. We will report on the plasma source requirements, design process, and the system design.

  8. Experimental Study of High-Z Gas Buffers in Gas-Filled ICF Engines...

    Office of Scientific and Technical Information (OSTI)

    and energetic ions released during target detonation. To reduce the uncertainties of cooling and beamtarget propagation through such gas-filled chambers, we present a pulsed...

  9. Intermixing at the absorber-buffer layer interface in thin-film...

    Office of Scientific and Technical Information (OSTI)

    ... SULFIDES; CATIONS; DOPED MATERIALS; IMPURITIES; INTERFACES; LAYERS; PASSIVATION; PHOTOVOLTAIC EFFECT; RECOMBINATION; SOLAR CELLS; THIN FILMS; TRAPS; ZINC SULFIDES Word Cloud ...

  10. Buffer Chemical Polishing and RF Testing of the 56 MHz SRF Cavity

    SciTech Connect (OSTI)

    Burrill,A.

    2009-01-01

    The 56 MHz cavity presents a unique challenge in preparing it for RF testing prior to construction of the cryomodule. This challenge arises due to the physical dimensions and subsequent weight of the cavity, and is further complicated by the coaxial geometry, and the need to properly chemically etch and high pressure rinse the entire inner surface prior to RF testing. To the best of my knowledge, this is the largest all niobium SRF cavity to be chemically etched and subsequently tested in a vertical dewar at 4K, and these processes will be the topic of this technical note.

  11. High rate buffer layer for IBAD MgO coated conductors

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.

    2007-08-21

    Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.

  12. GaAs buffer layer technique for vertical nanowire growth on Si...

    Office of Scientific and Technical Information (OSTI)

    However, the easy oxidation of Si, possible Si contamination in the NWs, high defect density in the NWs, and high sensitivity of the NW morphology to growth conditions largely ...

  13. The W-WO[subscript 2] oxygen fugacity buffer (WWO) at high pressure...

    Office of Scientific and Technical Information (OSTI)

    Authors: Shofner, Gregory A. ; Campbell, Andrew J. ; Danielson, Lisa R. ; Righter, Kevin ; Fischer, Rebecca A. ; Wang, Yanbin ; Prakapenka, Vitali 1 ; UC) 2 + Show Author ...

  14. Evaluation of the Effective Moisture Penetration Depth Model for Estimating Moisture Buffering in Buildings

    SciTech Connect (OSTI)

    Woods, J.; Winkler, J.; Christensen, D.

    2013-01-01

    This study examines the effective moisture penetration depth (EMPD) model, and its suitability for building simulations. The EMPD model is a compromise between the simple, inaccurate effective capacitance approach and the complex, yet accurate, finite-difference approach. Two formulations of the EMPD model were examined, including the model used in the EnergyPlus building simulation software. An error in the EMPD model we uncovered was fixed with the release of EnergyPlus version 7.2, and the EMPD model in earlier versions of EnergyPlus should not be used.

  15. U-115: Novell GroupWise Client Address Book Processing Buffer...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    is vulnerable to an exploit where a malformed address book could cause heap memory corruption, which could lead to remote code execution under the privilege of the user that...

  16. Smart buildings with electric vehicle interconnection as buffer for local renewables?

    SciTech Connect (OSTI)

    Stadler, Michael; Cardoso, Goncalo; DeForest, Nicholas; Donadee, Jon; Gomez, Tomaz; Lai, Judy; Marnay, Chris; Megel, Olivier; Mendes, Goncalo; Siddiqui, Afzal

    2011-05-01

    Some conclusions from this presentation are: (1) EV Charging/discharging pattern mainly depends on the objective of the building (cost versus CO{sub 2}); (2) performed optimization runs show that stationary batteries are more attractive than mobile storage when putting more focus on CO{sub 2} emissions because stationary storage is available 24 hours a day for energy management - it's more effective; (3) stationary storage will be charged by PV, mobile only marginally; and (4) results will depend on the considered region and tariff. Final research work will show the results for 138 different buildings in nine different climate zones and three major utility service territories.

  17. DC BUFFERING AND FLOATING CURRENT FOR A HIGH VOLTAGE IMB APPLICATION

    SciTech Connect (OSTI)

    J.L. Morrison

    2014-08-01

    An interface technique for the latest generation of the Impedance Measurement Box (IMB) has been conceived to enable measurement of impedance spectra for battery modules up to 300V. A 300V capable or higher IMB is an enabling technology for in-situ diagnostics within electric vehicle charging stations or battery back-ups within power distribution sub-stations. It is possible that the existing IMB can be adapted via a 300V interface module to a test battery with voltage significantly greater than 50V. Recently a new concept was conceived for the calibration, algorithm and electronics of the IMB. That algorithm and calibration for that concept have been physically validated. The principal feature of the new electronics is the floating current source excitation of the battery under test. The single ended current excitation of the battery under test, used in the 50V IMB, requires that the negative terminal of the test battery must be the analog ground for the IMB. The new floating current technique allows the test battery to be fully high impedance isolated for a measurement. That isolation will improve IMB noise immunity and enable interrogation of cells internal to a battery module. All these techniques still use the same rapid concept for impedance measurement with the IMB. The purpose of this disclosure is to provide an overview of the analytical validation for three concepts to interface the floating current excitation to a high voltage battery. Recursive simulation models were used in different test scenarios to validate the various new concepts. The analysis will show that it is possible to interface the floating signal current to obtain an impedance measurement on a high voltage test battery. Additionally, the analysis will investigate stress seen by electronics while testing a 300V battery.

  18. Inert Gas Buffered Milling and Particle Size Separation of μm...

    Office of Scientific and Technical Information (OSTI)

    Country of Publication: United States Language: English Subject: 43 PARTICLE ACCELERATORS; 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY superconductor, powder, aerosol, ...

  19. Sandia National Laboratories: Products and Services

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Gages, Fixtures, Molds Power Sources & Batteries Manufacturing, Shop Overflow through the Manufacturing Processes & Services Department Energy, Security & International Procurement...

  20. Fabrication of Sr silicate buffer layer on Si(100) substrate by pulsed laser deposition using a SrO target

    SciTech Connect (OSTI)

    Imanaka, Atsuhiro; Sasaki, Tsubasa; Hotta, Yasushi Satoh, Shin-ichi

    2014-09-01

    The authors fabricated 2??1 Sr-reconstructed Si(100) substrates using thin SrO layers, and used them to direct growth of crystalline perovskite oxide on Si. The SrO layers used to reconstruct the Si(100) substrates were grown by pulsed laser deposition from a SrO single crystal target, followed by postdeposition-annealing (PDA) of the SrO/Si(100) structure. In situ observations of reflective high-energy electron diffraction during PDA confirmed a 2??1 reconstruction of the Si surface and x-ray photoemission spectroscopy of the annealed samples confirmed the existence of Sr atoms in a silicate phase, which indicated that a 2??1 Sr-reconstructed Si surface was achieved. The optimal fabrication conditions were annealing at 720?C for 1?min and an equivalent SrO layer thickness (ML{sub eq}) of 2.5 ML{sub eq}. The temperature condition was very narrow, at 720??20?C, for an acceptable product. Subsequently, the authors demonstrated the growth of crystalline SrTiO{sub 3} films on the 2??1 Sr-reconstructed Si(100) surfaces.

  1. ALSNews Vol. 302

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    UEC Corner: In Haiku, by Ken Goldberg ALS Science Cafe Attracts Overflow Crowd Shutdown Features Seismic Retrofit, Air Handler Replacement Operations News Links Boron-based...

  2. TITLE

    Office of Legacy Management (LM)

    ... Act BLM U.S. Bureau of Land Management CERCLA ... Test Site, Colorado Rulison Gas Stimulation Test Site, ... wet meadows, river overflows. mudflats. and natural ponds. ...

  3. Acceptance for Beneficial Use for the 100K Service Water Pumps Auto Start Modifications Project 1K-97-3466M

    SciTech Connect (OSTI)

    MULLER, F.J.

    2000-03-27

    This Acceptance for Beneficial Use checklist covers the modifications to the K Basins service water pumps that added an auto-start function for reliability of the fire suppression system. The following information is to document the Acceptance for Beneficial Use (ABU) with a checklist and supporting information. The service water pumps have been modified so that on low system pressure after a time delay, the standby pump will automatically start. This ABU checklist matrix indicates the organizations that are responsible for the preparation of --or for the provision of input to--the identified documentation required by K Basins Operations. Looking at the items in the matrix, it can be seen that the subproject does not bear the sole responsibility for the generation of all these items. Rather, many items are outside of the subproject's scope such that other Spent Nuclear Fuel (SNF) organizations are needed to prepare or perform them (e.g., Training, Procedures, Facility Engineering, Startup, etc.). This supporting document, by virtue of all signatures approving it on the Engineering Data Transmittal, documents an agreement among the various represented disciplines and organizations within the SNF Project as to what is required in terms of documentation to transfer custody to Operations.

  4. Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO3-buffered ferroelectric BaTiO3 film on GaAs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qiao, Q.; Zhang, Y.; Contreras-Guerrero, Rocio; Droopad, Ravi; Pantelides, S. T.; Pennycook, Stephen J.; Ogut, Serdar; Klie, Robert F.

    2015-11-16

    The integration of functional oxide thin-films on compound semiconductors can lead to a class of reconfigurable spin-based optoelectronic devices if defect-free, fully reversible active layers are stabilized. However, previous first-principles calculations predicted that SrTiO3 thin filmsgrown on Si exhibit pinned ferroelectric behavior that is not switchable, due to the presence of interfacial vacancies. Meanwhile, piezoresponse force microscopy measurements have demonstrated ferroelectricity in BaTiO3 grown on semiconductor substrates. The presence of interfacial oxygen vacancies in such complex-oxide/semiconductor systems remains unexplored, and their effect on ferroelectricity is controversial. We also use a combination of aberration-corrected scanning transmission electron microscopy and first-principles densitymore » functional theory modeling to examine the role of interfacial oxygen vacancies on the ferroelectricpolarization of a BaTiO3 thin filmgrown on GaAs. Moreover, we demonstrate that interfacial oxygen vacancies enhance the polar discontinuity (and thus the single domain, out-of-plane polarization pinning in BaTiO3), and propose that the presence of surface charge screening allows the formation of switchable domains.« less

  5. Apparatus for controlling coolant level in a liquid-metal-cooled nuclear reactor

    DOE Patents [OSTI]

    Jones, Robert D.

    1978-01-01

    A liquid-metal-cooled fast-breeder reactor which has a thermal liner spaced inwardly of the pressure vessel and includes means for passing bypass coolant through the annulus between the thermal liner and the pressure vessel to insulate the pressure vessel from hot outlet coolant includes control ports in the thermal liner a short distance below the normal operating coolant level in the reactor and an overflow nozzle in the pressure vessel below the control ports connected to an overflow line including a portion at an elevation such that overflow coolant flow is established when the coolant level in the reactor is above the top of the coolant ports. When no makeup coolant is added, bypass flow is inwardly through the control ports and there is no overflow; when makeup coolant is being added, coolant flow through the overflow line will maintain the coolant level.

  6. Valve for controlling solids flow

    DOE Patents [OSTI]

    Staiger, M. Daniel (Idaho Falls, ID)

    1985-01-01

    A valve for controlling the flow of solids comprises a vessel having an overflow point, an inlet line for discharging solids into the vessel positioned within the vessel such that the inlet line's discharge point is lower than the vessel's overflow point, and apparatus for introducing a fluidizing fluid into the vessel. The fluidizing fluid fluidizes the solids within the vessel so that they overflow at the vessel's overflow point. For the removal of nuclear waste product the vessel may be placed within a sealed container having a bottom connected transport line for transporting the solids to storage or other sites. The rate of solids flow is controlled by the flow rate of the fluidizing fluid and by V-notch weirs of different sizes spaced about the top of the vessel.

  7. Valve for controlling solids flow

    DOE Patents [OSTI]

    Staiger, M.D.

    1982-09-29

    A valve for controlling the flow of solids comprises a vessel having an overflow point, an inlet line for discharging solids into the vessel positioned within the vessel such that the inlet line's discharge point is lower than the vessel's overflow point, and means for introducing a fluidizing fluid into the vessel. The fluidizing fluid fluidizes the solids within the vessel so that they overflow at the vessel's overflow point. For the removal of nuclear waste product the vessel may be placed within a sealed container having a bottom connected transport line for transporting the solids to storage or other sites. The rate of solids flow is controlled by the flow rate of the fluidizing fluid and by V-notch weirs of different sizes spaced about the top of the vessel.

  8. Tank Waste Committee Page 1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... to TWC. Chris noted that the overflows, pipeline breaks, and spills in all SSTs are ... the closure plan for C Farm and the permit, which will both be available in a few months. ...

  9. Subterranean drilling and in situ treatment of wastes using a contamination control system and methods relating thereto

    DOE Patents [OSTI]

    Jessmore, James J.; Loomis, Guy G.; Pettet, Mark C.; Flyckt, Melissa C.

    2004-09-28

    Systems and methods relating to subterranean drilling while maintaining containment of any contaminants released during the drilling. A thrust block installed over a zone of interest provides an overflow space for retaining any contaminants and excess sealant returns. Negative air pressure may be maintained in the overflow space by a ventilation system. Access ports in the thrust block seal the overflow space from the surrounding environment with a membrane seal. A flexible sack seal in the access port may be connected to a drill shroud prior to drilling, providing containment during drilling after the drill bit penetrates the membrane seal. The drill shroud may be adapted to any industry standard drilling rig and includes a connection conduit for connecting to the flexible sack seal and a flexible enclosure surrounding the drill shaft and of a length to accommodate full extension thereof. Upon withdrawal, the sack seal may be closed off and separated, maintaining containment of the overflow space and the drill shroud.

  10. CX-008279: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Building 8 Compressor Aftercooler Rupture Disc Overflow Piping Project CX(s) Applied: B1.3, B1.15 Date: 05/09/2012 Location(s): West Virginia Offices(s): National Energy Technology Laboratory

  11. CX-008336: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Pad 90 Overflow Parking Lot Project CX(s) Applied: B1.15 Date: 05/01/2012 Location(s): New York Offices(s): Naval Nuclear Propulsion Program

  12. 2001 - 01 | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Join Forces (Virginian-Pilot) Thu, 01042001 - 12:00am Economy: Send Northern Virginia's High-Tech Overflow Here (Daily Press) Mon, 01012001 - 12:00am Catherine Westfall...

  13. NREL: Technology Deployment - Disaster Resiliency and Recovery...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Galena, Alaska Photo of workers building a raised house. New construction in Galena is more resistant to flooding. In May 2013, the Yukon River overflowed its banks with water and...

  14. Better Buildings Residential Network Program Sustainability Peer...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... Distributed 7,000 kits to low-income families in Kansas City. Averted 15-20k ... Combined sewer overflow events create a strong motivator for the water utility to reduce ...

  15. Stochastic Consequence Analysis for Waste Leaks

    SciTech Connect (OSTI)

    HEY, B.E.

    2000-05-31

    This analysis evaluates the radiological consequences of potential Hanford Tank Farm waste transfer leaks. These include ex-tank leaks into structures, underneath the soil, and exposed to the atmosphere. It also includes potential misroutes, tank overflow

  16. U-170: Apple QuickTime Multiple Flaws Let Remote Users Execute...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    overflow CVE-2012-0670. A specially crafted '.pict' file can trigger a memory corruption error CVE-2012-0671. Impact: A remote user can create a file that, when loaded by...

  17. EECBG Success Story: Georgia County Turning Industrial and Farm Waste Into Big Energy Savings

    Broader source: Energy.gov [DOE]

    Gwinnett County, Georgia built a "Gas to Energy" system at the city water resources center that will reduce operational costs and sanitary sewer overflows, thanks to an Energy Efficiency and Conservation Block Grant (EECBG). Learn more.

  18. CX-008202: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Renewable Energy Ground Mounted Photovoltaic Grid System Overflow CX(s) Applied: B5.16 Date: 03/29/2012 Location(s): Other Location Offices(s): Golden Field Office

  19. Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO3-buffered ferroelectric BaTiO3 film on GaAs

    SciTech Connect (OSTI)

    Qiao, Q.; Zhang, Y.; Contreras-Guerrero, Rocio; Droopad, Ravi; Pantelides, S. T.; Pennycook, Stephen J.; Ogut, Serdar; Klie, Robert F.

    2015-11-16

    The integration of functional oxide thin-films on compound semiconductors can lead to a class of reconfigurable spin-based optoelectronic devices if defect-free, fully reversible active layers are stabilized. However, previous first-principles calculations predicted that SrTiO3 thin filmsgrown on Si exhibit pinned ferroelectric behavior that is not switchable, due to the presence of interfacial vacancies. Meanwhile, piezoresponse force microscopy measurements have demonstrated ferroelectricity in BaTiO3 grown on semiconductor substrates. The presence of interfacial oxygen vacancies in such complex-oxide/semiconductor systems remains unexplored, and their effect on ferroelectricity is controversial. We also use a combination of aberration-corrected scanning transmission electron microscopy and first-principles density functional theory modeling to examine the role of interfacial oxygen vacancies on the ferroelectricpolarization of a BaTiO3 thin filmgrown on GaAs. Moreover, we demonstrate that interfacial oxygen vacancies enhance the polar discontinuity (and thus the single domain, out-of-plane polarization pinning in BaTiO3), and propose that the presence of surface charge screening allows the formation of switchable domains.

  20. Report on THMC Modeling of the Near Field Evolution of a Generic...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    field setting for modeling the geo-mechanical behavior of the buffer. The analysis highlights the complex coupled geo-mechanical behavior in the buffer and its...

  1. CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and...

    Office of Scientific and Technical Information (OSTI)

    Subject: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; BUFFERS; PERFORMANCE; SOLAR CELLS; SOLAR ENERGY; THIN FILMS PV; HIGH-EFFICIENCY; SOLAR CELLS; BUFFER LAYERS; POLYCRYSTALLINE; THIN ...

  2. 05-05-2010 NNSA-B-10-0144

    National Nuclear Security Administration (NNSA)

    5-05-2010 NNSA-B-10-0144 The U.S. Department of Energy/National Nuclear Security Administration (DOE/NNSA) proposes to modify the overflow lines for the twin, 10,000 (10K) gallon (gal), elevated water storage tanks located in Coyote Test Field (CTF). The overflow lines are required to extend to within 18 inches (in.) of ground level by the American Water Workers Association (AWWA) M42, Standard Specification D100, and New Mexico Administrative Code (NMAC). These two, 10K-gal, elevated water

  3. High pressure effects on the iron iron oxide and nickel nickel oxide oxygen

    Office of Scientific and Technical Information (OSTI)

    fugacity buffers (Journal Article) | SciTech Connect High pressure effects on the iron iron oxide and nickel nickel oxide oxygen fugacity buffers Citation Details In-Document Search Title: High pressure effects on the iron iron oxide and nickel nickel oxide oxygen fugacity buffers The chemical potential of oxygen in natural and experimental samples is commonly reported relative to a specific oxygen fugacity (fO{sub 2}) buffer. These buffers are precisely known at 1 bar, but under high

  4. Performance Tuning

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Performance Tuning Performance Tuning Hints and tips on how to optimize your Burst Buffer performance Note: this only applies to the Cori Phase 1 Burst Buffer and should not be taken as general Burst Buffer advice. This page will be updated as the DataWarp software is updated and performance continues to improve. For larger files, ensure your Burst Buffer allocation will be striped over multiple nodes Currently, the Burst Buffer granularity is 213GB. If you request an allocation smaller than

  5. Process development of thin strip steel casting

    SciTech Connect (OSTI)

    Sussman, R.C.; Williams, R.S.

    1990-12-01

    An important new frontier is being opened in steel processing with the emergence of thin strip casting. Casting steel directly to thin strip has enormous benefits in energy savings by potentially eliminating the need for hot reduction in a hot strip mill. This has been the driving force for numerous current research efforts into the direct strip casting of steel. The US Department of Energy initiated a program to evaluate the development of thin strip casting in the steel industry. In earlier phases of this program, planar flow casting on an experimental caster was studied by a team of engineers from Westinghouse Electric corporation and Armco Inc. A subsequent research program was designed as a fundamental and developmental study of both planar and melt overflow casting processes. This study was arranged as several separate and distinct tasks which were often completed by different teams of researchers. An early task was to design and build a water model to study fluid flow through different designs of planar flow casting nozzles. Another important task was mathematically modeling of melt overflow casting process. A mathematical solidification model for the formation of the strip in the melt overflow process was written. A study of the material and conditioning of casting substrates was made on the small wheel caster using the melt overflow casting process. This report discusses work on the development of thin steel casting.

  6. SLUDGE PARTICLE SEPAPATION EFFICIENCIES DURING SETTLER TANK RETRIEVAL INTO SCS-CON-230

    SciTech Connect (OSTI)

    DEARING JI; EPSTEIN M; PLYS MG

    2009-07-16

    The purpose of this document is to release, into the Hanford Document Control System, FA1/0991, Sludge Particle Separation Efficiencies for the Rectangular SCS-CON-230 Container, by M. Epstein and M. G. Plys, Fauske & Associates, LLC, June 2009. The Sludge Treatment Project (STP) will retrieve sludge from the 105-K West Integrated Water Treatment System (IWTS) Settler Tanks and transfer it to container SCS-CON-230 using the Settler Tank Retrieval System (STRS). The sludge will enter the container through two distributors. The container will have a filtration system that is designed to minimize the overflow of sludge fines from the container to the basin. FAI/09-91 was performed to quantify the effect of the STRS on sludge distribution inside of and overflow out of SCS-CON-230. Selected results of the analysis and a system description are discussed. The principal result of the analysis is that the STRS filtration system reduces the overflow of sludge from SCS-CON-230 to the basin by roughly a factor of 10. Some turbidity can be expected in the center bay where the container is located. The exact amount of overflow and subsequent turbidity is dependent on the density of the sludge (which will vary with location in the Settler Tanks) and the thermal gradient between the SCS-CON-230 and the basin. Attachment A presents the full analytical results. These results are applicable specifically to SCS-CON-230 and the STRS filtration system's expected operating duty cycles.

  7. Tailoring Pore Size of Nitrogen-Doped Hollow Carbon Nanospheres for Confi ning Sulfur in LithiumSulfur Batteries

    SciTech Connect (OSTI)

    Zhou, Weidong; Wang, Chong M.; Zhang, Quiglin; Abruna, Hector D.; He, Yang; Wang, Jiangwei; Mao, Scott X.; Xiao, Xingcheng

    2015-08-19

    Three types of nitrogen-doped hollow carbon spheres with different pore sized porous shells are prepared to investigate the performance of sulfur confinement. The reason that why no sulfur is observed in previous research is determined and it is successfully demonstrated that the sulfur/polysulfide will overflow the porous carbon during the lithiation process.

  8. Office of Wastewater Management catalog of publications

    SciTech Connect (OSTI)

    1998-09-01

    The contents include: Introduction; Categories of Documents (Biosolids; Construction Grants; Environmental Impact Statements; Federal Registers; Finance; Needs and Assessments; Operation and Maintenance; Permitting Issues; Pollution Prevention and Control; Pretreatment; Small Communities; Storm Water/Combined Sewer Overflows; Treatment; Water Conservation and Efficiency; Water Quality and Standards; and Miscellaneous); and Document Title Index.

  9. Low latency counter event indication

    DOE Patents [OSTI]

    Gara, Alan G.; Salapura, Valentina

    2010-08-24

    A hybrid counter array device for counting events with interrupt indication includes a first counter portion comprising N counter devices, each for counting signals representing event occurrences and providing a first count value representing lower order bits. An overflow bit device associated with each respective counter device is additionally set in response to an overflow condition. The hybrid counter array includes a second counter portion comprising a memory array device having N addressable memory locations in correspondence with the N counter devices, each addressable memory location for storing a second count value representing higher order bits. An operatively coupled control device monitors each associated overflow bit device and initiates incrementing a second count value stored at a corresponding memory location in response to a respective overflow bit being set. The incremented second count value is compared to an interrupt threshold value stored in a threshold register, and, when the second counter value is equal to the interrupt threshold value, a corresponding "interrupt arm" bit is set to enable a fast interrupt indication. On a subsequent roll-over of the lower bits of that counter, the interrupt will be fired.

  10. Low latency counter event indication

    DOE Patents [OSTI]

    Gara, Alan G.; Salapura, Valentina

    2008-09-16

    A hybrid counter array device for counting events with interrupt indication includes a first counter portion comprising N counter devices, each for counting signals representing event occurrences and providing a first count value representing lower order bits. An overflow bit device associated with each respective counter device is additionally set in response to an overflow condition. The hybrid counter array includes a second counter portion comprising a memory array device having N addressable memory locations in correspondence with the N counter devices, each addressable memory location for storing a second count value representing higher order bits. An operatively coupled control device monitors each associated overflow bit device and initiates incrementing a second count value stored at a corresponding memory location in response to a respective overflow bit being set. The incremented second count value is compared to an interrupt threshold value stored in a threshold register, and, when the second counter value is equal to the interrupt threshold value, a corresponding "interrupt arm" bit is set to enable a fast interrupt indication. On a subsequent roll-over of the lower bits of that counter, the interrupt will be fired.

  11. Performing a local reduction operation on a parallel computer

    DOE Patents [OSTI]

    Blocksome, Michael A.; Faraj, Daniel A.

    2012-12-11

    A parallel computer including compute nodes, each including two reduction processing cores, a network write processing core, and a network read processing core, each processing core assigned an input buffer. Copying, in interleaved chunks by the reduction processing cores, contents of the reduction processing cores' input buffers to an interleaved buffer in shared memory; copying, by one of the reduction processing cores, contents of the network write processing core's input buffer to shared memory; copying, by another of the reduction processing cores, contents of the network read processing core's input buffer to shared memory; and locally reducing in parallel by the reduction processing cores: the contents of the reduction processing core's input buffer; every other interleaved chunk of the interleaved buffer; the copied contents of the network write processing core's input buffer; and the copied contents of the network read processing core's input buffer.

  12. Performing a local reduction operation on a parallel computer

    DOE Patents [OSTI]

    Blocksome, Michael A; Faraj, Daniel A

    2013-06-04

    A parallel computer including compute nodes, each including two reduction processing cores, a network write processing core, and a network read processing core, each processing core assigned an input buffer. Copying, in interleaved chunks by the reduction processing cores, contents of the reduction processing cores' input buffers to an interleaved buffer in shared memory; copying, by one of the reduction processing cores, contents of the network write processing core's input buffer to shared memory; copying, by another of the reduction processing cores, contents of the network read processing core's input buffer to shared memory; and locally reducing in parallel by the reduction processing cores: the contents of the reduction processing core's input buffer; every other interleaved chunk of the interleaved buffer; the copied contents of the network write processing core's input buffer; and the copied contents of the network read processing core's input buffer.

  13. High temperature ultrasonic testing of materials for internal flaws

    DOE Patents [OSTI]

    Kupperman, David S.; Linzer, Melvin

    1990-01-01

    An apparatus is disclosed for nondestructive evaluation of defects in hot terials, such as metals and ceramics, by sonic signals, which includes a zirconia buffer in contact with a hot material being tested, a liquid couplant of borax in contact with the zirconia buffer and the hot material to be tested, a transmitter mounted on the zirconia buffer sending sonic signals through the buffer and couplant into the hot material, and a receiver mounted on the zirconia buffer receiving sonic signals reflected from within the hot material through the couplant and the buffer.

  14. EIS-0402: Amended Notice of Intent to Prepare an Environmental...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Remediation of Area IV and the Northern Buffer Zone of the Santa Susana Field Laboratory ... well as the Northern Buffer Zone of the Santa Susana Field Laboratory (SSFL) in eastern ...

  15. Hybrid data storage system in an HPC exascale environment

    DOE Patents [OSTI]

    Bent, John M.; Faibish, Sorin; Gupta, Uday K.; Tzelnic, Percy; Ting, Dennis P. J.

    2015-08-18

    A computer-executable method, system, and computer program product for managing I/O requests from a compute node in communication with a data storage system, including a first burst buffer node and a second burst buffer node, the computer-executable method, system, and computer program product comprising striping data on the first burst buffer node and the second burst buffer node, wherein a first portion of the data is communicated to the first burst buffer node and a second portion of the data is communicated to the second burst buffer node, processing the first portion of the data at the first burst buffer node, and processing the second portion of the data at the second burst buffer node.

  16. Microsoft PowerPoint - 09XTPO-M_MPI_Environment.pptx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    unexpected messages and, if it finds a short match copies data from buffer If it matches an short match, copies data from buffer. If it matches an unexpected long message, it...

  17. Tax Credits, Rebates & Savings | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    while promoting wind and solar development Establish reasonable requirements for noise limitations, buffer areas, set backs, and facility decommissioning Eligibility:...

  18. Example batch scripts

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Example batch scripts Example batch scripts Please note that the Burst Buffer is not yet available to users. This documentation is intended for the Burst Buffer Early Users Program only. The Cori Phase 1 Burst Buffer has several levels of interaction that are not yet fully functional. As present. the Burst Buffer can be used as a scratch space. Staging data in and out using the Datawarp commands is not currently possible, and using a persistent reservation (accessible by many different jobs) is

  19. Tax Credits, Rebates & Savings | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    wind and solar development Establish reasonable requirements for noise limitations, buffer areas, set backs, and facility decommissioning Eligibility: Commercial,...

  20. Geoscience Laboratory | Sample Preparation Laboratories

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    preparation and other relatively straight-forward laboratory manipulations. These include buffer preparations, solid sample grinding, solution concentration, filtration, and...

  1. MITIGATION ACTION PLAN

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... linear facilities may cross this additional buffer land. ... when duct firing natural gas (for supplemental energy ... mitigation requirements, andor monitoring ...

  2. GeoChips for Analysis of Microbial Functional Communities (Book...

    Office of Scientific and Technical Information (OSTI)

    Methods covered include preparation of DNA (whole community genome amplification and ... Subject: 59; AMPLIFICATION; BUFFERS; COMMUNITIES; DNA; ENZYMES; FUNCTIONALS; GENES; ...

  3. Evaluate Si Layers: Cooperative Research and Development Final Report, CRADA Number CRD-07-255

    SciTech Connect (OSTI)

    Teplin, C.

    2013-04-01

    Evaluate Si layers based on heteroepitaxial Si growth on RABITS textured metal substrates coated with textured buffer layers.

  4. Semiconductor films on flexible iridium substrates

    DOE Patents [OSTI]

    Goyal, Amit

    2005-03-29

    A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

  5. Photoelectrodialytic cell

    DOE Patents [OSTI]

    Murphy, G.W.

    1983-09-13

    A multicompartment photoelectrodialytic demineralization cell is provided with a buffer compartment interposed between the product compartment and a compartment containing an electrolyte solution. Semipermeable membranes separate the buffer compartment from the product and electrolyte compartments. The buffer compartment is flushed to prevent leakage of the electrolyte compartment from entering the product compartment. 3 figs.

  6. Photoelectrodialytic cell

    DOE Patents [OSTI]

    Murphy, George W.

    1983-01-01

    A multicompartment photoelectrodialytic demineralization cell is provided with a buffer compartment interposed between the product compartment and a compartment containing an electrolyte solution. Semipermeable membranes separate the buffer compartment from the product and electrolyte compartments. The buffer compartment is flushed to prevent leakage of the electrolyte compartment from entering the product compartment.

  7. Apparatus and method for continuous separation of magnetic particles from non-magnetic fluids

    DOE Patents [OSTI]

    Oder, Robin R.; Jamison, Russell E.

    2010-02-09

    A magnetic separator vessel (1) for separating magnetic particles from non-magnetic fluid includes a separation chamber having an interior and exterior wall, a top and bottom portion; a magnet (3) having first and second poles (2) positioned adjacent to the exterior wall, wherein the first pole is substantially diametrically opposed to the second pole; a inlet port (5) is directed into the top portion of the separation chamber, wherein the inlet port (5) is positioned adjacent to one of the first and second poles (2), wherein the inlet port (5) is adapted to transfer a mixture into the separation chamber; an underflow port (6) in communication with the bottom portion, wherein the underflow port (6) is adapted to receive the magnetic particles; and an overflow port (9) in communication with the separation chamber, wherein the overflow port (9) is adapted to receive the non-magnetic fluid.

  8. Device and method for automated separation of a sample of whole blood into aliquots

    DOE Patents [OSTI]

    Burtis, Carl A.; Johnson, Wayne F.

    1989-01-01

    A device and a method for automated processing and separation of an unmeasured sample of whole blood into multiple aliquots of plasma. Capillaries are radially oriented on a rotor, with the rotor defining a sample chamber, transfer channels, overflow chamber, overflow channel, vent channel, cell chambers, and processing chambers. A sample of whole blood is placed in the sample chamber, and when the rotor is rotated, the blood moves outward through the transfer channels to the processing chambers where the blood is centrifugally separated into a solid cellular component and a liquid plasma component. When the rotor speed is decreased, the plasma component backfills the capillaries resulting in uniform aliquots of plasma which may be used for subsequent analytical procedures.

  9. WTP Calculation Sheet: Determining the LAW Glass Former Constituents and Amounts for G2 and Acm Models. 24590-LAW-M4C-LFP-00002, Rev. B

    SciTech Connect (OSTI)

    Gimpel, Rodney F.; Kruger, Albert A.

    2013-12-16

    The purpose of this calculation is to determine the LAW glass former recipe and additives with their respective amounts. The methodology and equations contained herein are to be used in the G2 and ACM models until better information is supplied by R&T efforts. This revision includes calculations that determines the mass and volume of the bulk chemicals/minerals needed per batch. Plus, it contains calculations (for the G2 model) to help prevent overflow in LAW Feed Preparation Vessel.

  10. T-604: Google Chrome updated version of the Adobe Flash player

    Broader source: Energy.gov [DOE]

    The Chrome Stable channel has been updated to 10.0.648.205 for Windows, Mac, Linux and Chrome Frame. This release contains a new version of Adobe Flash 0-Day CVE-2011-0611. Update also includes a fix for a security vulnerability Critical CVE-2011-1300: Off-by-three in GPU process, CVE-2011-1301: Use-after-free in the GPU process, and CVE-2011-1302: Heap overflow in the GPU process.

  11. LIQUID CYCLONE CONTACTOR

    DOE Patents [OSTI]

    Whatley, M.E.; Woods, W.M.

    1962-09-01

    This invention relates to liquid-liquid extraction systems. The invention, an improved hydroclone system, comprises a series of serially connected, axially aligned hydroclones, each of which is provided with an axially aligned overflow chamber. The chambers are so arranged that rotational motion of a fluid being passed through the system is not lost in passing from chamber to chamber; consequently, this system is highly efficient in contacting and separating two immiscible liquids. (AEC)

  12. 17th Annual ALS Users' Association Meeting

    SciTech Connect (OSTI)

    Robinson, Art; Tamura, Lori

    2004-11-29

    It's not exactly Russian roulette, but scheduling October events outdoors is not risk-free, even in usually sunny California. An overflow crowd of more than 400 registered users, ALS staff, and vendors enjoyed a full indoor program featuring science highlights and workshops spread over two and a half days from October 18 to October 20. However, a major storm, heralding the onset of the San Francisco Bay Area rainy season, posed a few weather challenges for the events on the ALS patio.

  13. Nuclear waste solidification

    DOE Patents [OSTI]

    Bjorklund, William J.

    1977-01-01

    High level liquid waste solidification is achieved on a continuous basis by atomizing the liquid waste and introducing the atomized liquid waste into a reaction chamber including a fluidized, heated inert bed to effect calcination of the atomized waste and removal of the calcined waste by overflow removal and by attrition and elutriation from the reaction chamber, and feeding additional inert bed particles to the fluidized bed to maintain the inert bed composition.

  14. Managing internode data communications for an uninitialized process in a parallel computer

    DOE Patents [OSTI]

    Archer, Charles J; Blocksome, Michael A; Miller, Douglas R; Parker, Jeffrey J; Ratterman, Joseph D; Smith, Brian E

    2014-05-20

    A parallel computer includes nodes, each having main memory and a messaging unit (MU). Each MU includes computer memory, which in turn includes, MU message buffers. Each MU message buffer is associated with an uninitialized process on the compute node. In the parallel computer, managing internode data communications for an uninitialized process includes: receiving, by an MU of a compute node, one or more data communications messages in an MU message buffer associated with an uninitialized process on the compute node; determining, by an application agent, that the MU message buffer associated with the uninitialized process is full prior to initialization of the uninitialized process; establishing, by the application agent, a temporary message buffer for the uninitialized process in main computer memory; and moving, by the application agent, data communications messages from the MU message buffer associated with the uninitialized process to the temporary message buffer in main computer memory.

  15. Deflate decompressor

    DOE Patents [OSTI]

    Hamlet, Jason R.; Robertson, Perry J.; Pierson, Lyndon G.; Olsberg, Ronald R.

    2012-02-28

    A deflate decompressor includes at least one decompressor unit, a memory access controller, a feedback path, and an output buffer unit. The memory access controller is coupled to the decompressor unit via a data path and includes a data buffer to receive the data stream and temporarily buffer a first portion the data stream. The memory access controller transfers fixed length data units of the data stream from the data buffer to the decompressor unit with reference to a memory pointer pointing into the memory buffer. The feedback path couples the decompressor unit to the memory access controller to feed back decrement values to the memory access controller for updating the memory pointer. The decrement values each indicate a number of bits unused by the decompressor unit when decoding the fixed length data units. The output buffer unit buffers a second portion of the data stream after decompression.

  16. Mass-loss evolution of close-in exoplanets: Evaporation of hot Jupiters and the effect on population

    SciTech Connect (OSTI)

    Kurokawa, H.; Nakamoto, T.

    2014-03-01

    During their evolution, short-period exoplanets may lose envelope mass through atmospheric escape owing to intense X-ray and extreme ultraviolet (XUV) radiation from their host stars. Roche-lobe overflow induced by orbital evolution or intense atmospheric escape can also contribute to mass loss. To study the effects of mass loss on inner planet populations, we calculate the evolution of hot Jupiters considering mass loss of their envelopes and thermal contraction. Mass loss is assumed to occur through XUV-driven atmospheric escape and the following Roche-lobe overflow. The runaway effect of mass loss results in a dichotomy of populations: hot Jupiters that retain their envelopes and super Earths whose envelopes are completely lost. Evolution primarily depends on the core masses of planets and only slightly on migration history. In hot Jupiters with small cores (? 10 Earth masses), runaway atmospheric escape followed by Roche-lobe overflow may create sub-Jupiter deserts, as observed in both mass and radius distributions of planetary populations. Comparing our results with formation scenarios and observed exoplanets populations, we propose that populations of closely orbiting exoplanets are formed by capturing planets at/inside the inner edges of protoplanetary disks and subsequent evaporation of sub-Jupiters.

  17. Internode data communications in a parallel computer

    DOE Patents [OSTI]

    Archer, Charles J; Blocksome, Michael A; Miller, Douglas R; Parker, Jeffrey J; Ratterman, Joseph D; Smith, Brian E

    2014-02-11

    Internode data communications in a parallel computer that includes compute nodes that each include main memory and a messaging unit, the messaging unit including computer memory and coupling compute nodes for data communications, in which, for each compute node at compute node boot time: a messaging unit allocates, in the messaging unit's computer memory, a predefined number of message buffers, each message buffer associated with a process to be initialized on the compute node; receives, prior to initialization of a particular process on the compute node, a data communications message intended for the particular process; and stores the data communications message in the message buffer associated with the particular process. Upon initialization of the particular process, the process establishes a messaging buffer in main memory of the compute node and copies the data communications message from the message buffer of the messaging unit into the message buffer of main memory.

  18. Internode data communications in a parallel computer

    DOE Patents [OSTI]

    Archer, Charles J.; Blocksome, Michael A.; Miller, Douglas R.; Parker, Jeffrey J.; Ratterman, Joseph D.; Smith, Brian E.

    2013-09-03

    Internode data communications in a parallel computer that includes compute nodes that each include main memory and a messaging unit, the messaging unit including computer memory and coupling compute nodes for data communications, in which, for each compute node at compute node boot time: a messaging unit allocates, in the messaging unit's computer memory, a predefined number of message buffers, each message buffer associated with a process to be initialized on the compute node; receives, prior to initialization of a particular process on the compute node, a data communications message intended for the particular process; and stores the data communications message in the message buffer associated with the particular process. Upon initialization of the particular process, the process establishes a messaging buffer in main memory of the compute node and copies the data communications message from the message buffer of the messaging unit into the message buffer of main memory.

  19. Traps identification in Copper-Indium-Gallium-Sulfur-Selenide Solar Cells

    Office of Scientific and Technical Information (OSTI)

    Completed with Various Buffer Layers by Deep Level Transient Spectroscopy (Journal Article) | SciTech Connect Journal Article: Traps identification in Copper-Indium-Gallium-Sulfur-Selenide Solar Cells Completed with Various Buffer Layers by Deep Level Transient Spectroscopy Citation Details In-Document Search Title: Traps identification in Copper-Indium-Gallium-Sulfur-Selenide Solar Cells Completed with Various Buffer Layers by Deep Level Transient Spectroscopy Current-voltage

  20. Capillary electrophoresis-electrochemical detection microchip device and supporting circuits

    DOE Patents [OSTI]

    Jackson, Douglas J.; Roussel, Jr., Thomas J.; Crain, Mark M.; Baldwin, Richard P.; Keynton, Robert S.; Naber, John F.; Walsh, Kevin M.; Edelen, John. G.

    2008-03-18

    The present invention is a capillary electrophoresis device, comprising a substrate; a first channel in the substrate, and having a buffer arm and a detection arm; a second channel in the substrate intersecting the first channel, and having a sample arm and a waste arm; a buffer reservoir in fluid communication with the buffer arm; a waste reservoir in fluid communication with the waste arm; a sample reservoir in fluid communication with the sample arm; and a detection reservoir in fluid communication with the detection arm. The detection arm and the buffer arm are of substantially equal length.

  1. EIS-0402: Remediation of Area IV of the Santa Susana Field Laboratory...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Susana Field Laboratory (SSFL) in eastern Ventura County, California, approximately 29 miles north of downtown Los Angeles. (DOE's operations bordered the Northern Buffer Zone. ...

  2. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    ... Text Available December 2003 Epitaxial Growth of Strontium Bismuth TantalateNiobate of Buffered Magnesium Oxide Substrates Thomas, George H ; Morrell, Johathan ; Aytug, Tolga ; ...

  3. Traps identification in Copper-Indium-Gallium-Sulfur-Selenide...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Traps identification in Copper-Indium-Gallium-Sulfur-Selenide Solar Cells Completed with Various Buffer Layers by Deep Level Transient Spectroscopy Citation ...

  4. EIS-0402: Remediation of Area IV of the Santa Susana Field Laboratory...

    Broader source: Energy.gov (indexed) [DOE]

    Energy Technology Engineering Center (ETEC), as well as the Northern Buffer Zone of the Santa Susana Field Laboratory (SSFL) in eastern Ventura County, California, approximately 29...

  5. Microsoft PowerPoint - Town Hall Slides 7-10-14 rev 0

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to Phase II - July 1 * Phase I Recovery - Mitigation * Establishment of radiological buffer areas * Installation of CAM at Station B * Sealing of bypass dampers * Collection...

  6. Hydrothermal energy extraction, Auburn, New York: Final report: Volume 2, Chapters 6-10

    SciTech Connect (OSTI)

    Castor, T.P.

    1988-03-01

    This paper discusses a hydrothermal energy extraction system in detail. General topics covered are: Reservoir circulation loop; HVAC buffer loop; and automatic temperature control system. (LSP)

  7. CUG2011_Hopper2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Yun (Helen) He, National Energy Research Scientific ... This paper will discuss Hopper's usage during the "early ... and message passing library buffers all consume ...

  8. Mitigation of substrate defects in reflective reticles using sequential coating and annealing

    DOE Patents [OSTI]

    Mirkanimi, Paul B.

    2002-01-01

    A buffer-layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The buffer-layer is formed by either a multilayer deposited on the substrate or by a plurality of sequentially deposited and annealed coatings deposited on the substrate. The plurality of sequentially deposited and annealed coating may comprise multilayer and single layer coatings. The multilayer deposited and annealed buffer layer coatings may be of the same or different material than the reflecting coating thereafter deposited on the buffer-layer.

  9. ALPES - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    consumes less than 12 watts of power and operates quietly. The recirculating liquid can be customized for specific situations. A buffered saline solution or a nutrient solution ...

  10. Microsoft PowerPoint - LID Presentation_Biohabitats NSI [Compatibility...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rooftops Take a Roof to Stream Design Approach Take a Roof to Stream Design Approach Rainwater harvesting R i t i t ti Rainwater interception Landscape buffers Rooftop...

  11. ADELE Project AACAES (Smart Grid Project) | Open Energy Information

    Open Energy Info (EERE)

    Dec 2009 Dec 2013 References EU Smart Grid Projects Map1 Overview Compressesair energy storage (case) as buffer for electricity from wind and sun. References "EU Smart Grid...

  12. Towards Balancing Power,

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    results drives computing - Nobody cares how fast an incorrect final result was * Resilience implications - 2-level checkpointrestart using burst buffer needed at many-PFs...

  13. FINDING OF NO SIGNIFICANT IMPACT

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... The riparian buffer zone could mitigate any impact of stormwater runoff to local surface waters. A Stormwater Management Plan, as required by King George County, would be prepared ...

  14. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    ... Filter Results Filter by Subject chem (6) materials science (3) silicon (3) irradiation (2) laser radiation (2) silica (2) texture (2) thin films (2) alignment (1) buffers (1) ...

  15. PARC update slide 12-09-2011.pptx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    preserves the noncovalent interactions present in large multisubunit protein complexes by using aqueous solvents with volatile buffers (NH Ac) and collision-induced dissociation. 4...

  16. Vermont Wetland General Permit (3-9025) | Open Energy Information

    Open Energy Info (EERE)

    authorizing issuance of individual permits for specified activities within certain wetlands and buffers under Vermont's wetlands regulation. Author Vermont Department of...

  17. FONSI and MAP signed XXXX

    Energy Savers [EERE]

    be avoided by applying spatial and seasonal buffers to all construction activities. Fish and Water Resources Impacts to fish and water resources would be low to moderate *...

  18. 216-B-3 expansion ponds closure plan

    SciTech Connect (OSTI)

    Not Available

    1994-10-01

    This document describes the activities for clean closure under the Resource Conservation and Recovery Act of 1976 (RCRA) of the 216-B-3 Expansion Ponds. The 216-B-3 Expansion Ponds are operated by the US Department of Energy, Richland Operations Office (DOE-RL) and co-operated by Westinghouse Hanford Company (Westinghouse Hanford). The 216-B-3 Expansion Ponds consists of a series of three earthen, unlined, interconnected ponds that receive waste water from various 200 East Area operating facilities. The 3A, 3B, and 3C ponds are referred to as Expansion Ponds because they expanded the capability of the B Pond System. Waste water (primarily cooling water, steam condensate, and sanitary water) from various 200 East Area facilities is discharged to the Bypass pipe (Project X-009). Water discharged to the Bypass pipe flows directly into the 216-B-3C Pond. The ponds were operated in a cascade mode, where the Main Pond overflowed into the 3A Pond and the 3A Pond overflowed into the 3C Pond. The 3B Pond has not received waste water since May 1985; however, when in operation, the 3B Pond received overflow from the 3A Pond. In the past, waste water discharges to the Expansion Ponds had the potential to have contained mixed waste (radioactive waste and dangerous waste). The radioactive portion of mixed waste has been interpreted by the US Department of Energy (DOE) to be regulated under the Atomic Energy Act of 1954; the dangerous waste portion of mixed waste is regulated under RCRA.

  19. One West Third Street Tulsa Oklahoma

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Kirby Devore Information Technology Specialist Springfield Special thanks to: Cheryl Crosswell Mike Denny Ruben Garcia Bethel Herrold Ken Hollis David Kannady Jerry Martin Stan Mason Neil McInnis Beth Nielsen George Robbins Dave Sargent Anna Smith Katherine Thomas Rutha Williams Mary Beth Hudson Tulsa District COE U P D AT E S O U T H W E S T E R N P O W E R A D M I N I S T R A T I O N A P R I L - J U N E 2 0 0 4 Flood Events Affect Spring Operations LAKE DARDANELLE OVERFLOWED ITS BANKS DURING

  20. V-211: IBM iNotes Multiple Vulnerabilities | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1: IBM iNotes Multiple Vulnerabilities V-211: IBM iNotes Multiple Vulnerabilities August 5, 2013 - 6:00am Addthis PROBLEM: Multiple vulnerabilities have been reported in IBM Lotus iNotes PLATFORM: IBM iNotes 9.x ABSTRACT: IBM iNotes has two cross-site scripting vulnerabilities and an ActiveX Integer overflow vulnerability REFERENCE LINKS: Secunia Advisory SA54436 IBM Security Bulletin 1645503 CVE-2013-3027 CVE-2013-3032 CVE-2013-3990 IMPACT ASSESSMENT: High DISCUSSION: 1) Certain input related

  1. Simple methods solve vacuum column problems using plant data

    SciTech Connect (OSTI)

    Golden, S.W.; Sloley, A.W. )

    1992-09-14

    This paper reports that simple methods can be used to evaluate common vacuum column problems using actual field measurements. All that is required is an enthalpy table, a calculator, and an absolute pressure manometer, which can be purchased for about $100. The key to troubleshooting refinery crude or lube vacuum columns is basic plant data. Although many techniques may be used to increase cutpoint, many times the largest yield improvements can be achieved on existing units simply by eliminating such problems, as leaking collector trays or overflowing liquid distributors.

  2. Dynamic pulse difference circuit

    DOE Patents [OSTI]

    Erickson, Gerald L.

    1978-01-01

    A digital electronic circuit of especial use for subtracting background activity pulses in gamma spectrometry comprises an up-down counter connected to count up with signal-channel pulses and to count down with background-channel pulses. A detector responsive to the count position of the up-down counter provides a signal when the up-down counter has completed one scaling sequence cycle of counts in the up direction. In an alternate embodiment, a detector responsive to the count position of the up-down counter provides a signal upon overflow of the counter.

  3. Clostridium thermocellum DSM 1313 transcriptional responses to redox perturbation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sander, Kyle B.; Wilson, Charlotte M.; M. Rodriquez, Jr.; Klingeman, Dawn Marie; Davison, Brian H.; Brown, Steven D.; Rydzak, T.

    2015-12-12

    Clostridium thermocellum is a promising consolidated bioprocessing candidate organism capable of directly converting lignocellulosic biomass to ethanol. Current ethanol yields, productivities, and growth inhibitions are industrial deployment impediments for commodity fuel production by this bacterium. Redox imbalance under certain conditions and in engineered strains may contribute to incomplete substrate utilization and may direct fermentation products to undesirable overflow metabolites. As a result, towards a better understanding of redox metabolism in C. thermocellum, we established continuous growth conditions and analyzed global gene expression during addition of two stress chemicals (methyl viologen and hydrogen peroxide) which changed the fermentation redox potential.

  4. Clostridium thermocellum DSM 1313 transcriptional responses to redox perturbation

    SciTech Connect (OSTI)

    Sander, Kyle B.; Wilson, Charlotte M.; M. Rodriquez, Jr.; Klingeman, Dawn Marie; Davison, Brian H.; Brown, Steven D.; Rydzak, T.

    2015-12-12

    Clostridium thermocellum is a promising consolidated bioprocessing candidate organism capable of directly converting lignocellulosic biomass to ethanol. Current ethanol yields, productivities, and growth inhibitions are industrial deployment impediments for commodity fuel production by this bacterium. Redox imbalance under certain conditions and in engineered strains may contribute to incomplete substrate utilization and may direct fermentation products to undesirable overflow metabolites. As a result, towards a better understanding of redox metabolism in C. thermocellum, we established continuous growth conditions and analyzed global gene expression during addition of two stress chemicals (methyl viologen and hydrogen peroxide) which changed the fermentation redox potential.

  5. Pyrolysis with cyclone burner

    DOE Patents [OSTI]

    Green, Norman W.; Duraiswamy, Kandaswamy; Lumpkin, Robert E.

    1978-07-25

    In a continuous process for recovery of values contained in a solid carbonaceous material, the carbonaceous material is comminuted and then subjected to flash pyrolysis in the presence of a particulate heat source over an overflow weir to form a pyrolysis product stream containing a carbon containing solid residue and volatilized hydrocarbons. After the carbon containing solid residue is separated from the pyrolysis product stream, values are obtained by condensing volatilized hydrocarbons. The particulate source of heat is formed by oxidizing carbon in the solid residue and separating out the fines.

  6. Pyrolysis with staged recovery

    DOE Patents [OSTI]

    Green, Norman W.; Duraiswamy, Kandaswamy; Lumpkin, Robert E.; Winter, Bruce L.

    1979-03-20

    In a continuous process for recovery of values contained in a solid carbonaceous material, the carbonaceous material is comminuted and then subjected to flash pyrolysis in the presence of a particulate heat source fed over an overflow weir to form a pyrolysis product stream containing a carbon containing solid residue and volatilized hydrocarbons. After the carbon containing solid residue is separated from the pyrolysis product stream, values are obtained by condensing volatilized hydrocarbons. The particulate source of heat is formed by oxidizing carbon in the solid residue.

  7. Optical Spectroscopic Diagnostics Of Dusty Plasma In RF Discharge

    SciTech Connect (OSTI)

    Orazbayev, S. A.; Jumagulov, M. N.; Dosbolayev, M. K.; Silamiya, M.; Ramazanov, T. S.; Boufendi, L.

    2011-11-29

    The parameters of the buffer plasma containing dust particles were measured by means of spectroscopic methods. The change in the emission spectrum of the buffer plasma with addition of dust was observed. It seems to relate to changing in temperature and number density of electrons due to the influence of dusts.

  8. Polycrystalline ferroelectric or multiferroic oxide articles on biaxially textured substrates and methods for making same

    DOE Patents [OSTI]

    Goyal, Amit; Shin, Junsoo

    2015-03-31

    A polycrystalline ferroelectric and/or multiferroic oxide article includes a substrate having a biaxially textured surface; at least one biaxially textured buffer layer supported by the substrate; and a biaxially textured ferroelectric or multiferroic oxide layer supported by the buffer layer. Methods for making polycrystalline ferroelectric and/or multiferroic oxide articles are also disclosed.

  9. Method of depositing epitaxial layers on a substrate

    DOE Patents [OSTI]

    Goyal, Amit

    2003-12-30

    An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.

  10. Gas mixtures for spark gap closing switches

    DOE Patents [OSTI]

    Christophorou, Loucas G.; McCorkle, Dennis L.; Hunter, Scott R.

    1988-01-01

    Gas mixtures for use in spark gap closing switches comprised of fluorocarbons and low molecular weight, inert buffer gases. To this can be added a third gas having a low ionization potential relative to the buffer gas. The gas mixtures presented possess properties that optimized the efficiency spark gap closing switches.

  11. Gas mixtures for spark gap closing switches

    DOE Patents [OSTI]

    Christophorou, L.G.; McCorkle, D.L.; Hunter, S.R.

    1987-02-20

    Gas mixtures for use in spark gap closing switches comprised of fluorocarbons and low molecular weight, inert buffer gases. To this can be added a third gas having a low ionization potential relative to the buffer gas. The gas mixtures presented possess properties that optimized the efficiency spark gap closing switches. 6 figs.

  12. Lightweight, durable lead-acid batteries

    DOE Patents [OSTI]

    Lara-Curzio, Edgar; An, Ke; Kiggans, Jr., James O.; Dudney, Nancy J.; Contescu, Cristian I.; Baker, Frederick S.; Armstrong, Beth L.

    2011-09-13

    A lightweight, durable lead-acid battery is disclosed. Alternative electrode materials and configurations are used to reduce weight, to increase material utilization and to extend service life. The electrode can include a current collector having a buffer layer in contact with the current collector and an electrochemically active material in contact with the buffer layer. In one form, the buffer layer includes a carbide, and the current collector includes carbon fibers having the buffer layer. The buffer layer can include a carbide and/or a noble metal selected from of gold, silver, tantalum, platinum, palladium and rhodium. When the electrode is to be used in a lead-acid battery, the electrochemically active material is selected from metallic lead (for a negative electrode) or lead peroxide (for a positive electrode).

  13. Lightweight, durable lead-acid batteries

    DOE Patents [OSTI]

    Lara-Curzio, Edgar; An, Ke; Kiggans, Jr., James O; Dudney, Nancy J; Contescu, Cristian I; Baker, Frederick S; Armstrong, Beth L

    2013-05-21

    A lightweight, durable lead-acid battery is disclosed. Alternative electrode materials and configurations are used to reduce weight, to increase material utilization and to extend service life. The electrode can include a current collector having a buffer layer in contact with the current collector and an electrochemically active material in contact with the buffer layer. In one form, the buffer layer includes a carbide, and the current collector includes carbon fibers having the buffer layer. The buffer layer can include a carbide and/or a noble metal selected from of gold, silver, tantalum, platinum, palladium and rhodium. When the electrode is to be used in a lead-acid battery, the electrochemically active material is selected from metallic lead (for a negative electrode) or lead peroxide (for a positive electrode).

  14. Data communications in a parallel active messaging interface of a parallel computer

    DOE Patents [OSTI]

    Blocksome, Michael A.; Ratterman, Joseph D.; Smith, Brian E.

    2014-09-16

    Eager send data communications in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI composed of data communications endpoints that specify a client, a context, and a task, including receiving an eager send data communications instruction with transfer data disposed in a send buffer characterized by a read/write send buffer memory address in a read/write virtual address space of the origin endpoint; determining for the send buffer a read-only send buffer memory address in a read-only virtual address space, the read-only virtual address space shared by both the origin endpoint and the target endpoint, with all frames of physical memory mapped to pages of virtual memory in the read-only virtual address space; and communicating by the origin endpoint to the target endpoint an eager send message header that includes the read-only send buffer memory address.

  15. Data communications in a parallel active messaging interface of a parallel computer

    DOE Patents [OSTI]

    Blocksome, Michael A.; Ratterman, Joseph D.; Smith, Brian E.

    2014-09-02

    Eager send data communications in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI composed of data communications endpoints that specify a client, a context, and a task, including receiving an eager send data communications instruction with transfer data disposed in a send buffer characterized by a read/write send buffer memory address in a read/write virtual address space of the origin endpoint; determining for the send buffer a read-only send buffer memory address in a read-only virtual address space, the read-only virtual address space shared by both the origin endpoint and the target endpoint, with all frames of physical memory mapped to pages of virtual memory in the read-only virtual address space; and communicating by the origin endpoint to the target endpoint an eager send message header that includes the read-only send buffer memory address.

  16. Interconnecting network for switching data packets and method for switching data packets

    DOE Patents [OSTI]

    Benner, Alan Frederic; Minkenberg, Cyriel Johan Agnes; Stunkel, Craig Brian

    2010-05-25

    The interconnecting network for switching data packets, having data and flow control information, comprises a local packet switch element (S1) with local input buffers (I(1,1) . . . I(1,y)) for buffering the incoming data packets, a remote packet switch element (S2) with remote input buffers (I(2,1) . . . I(2,y)) for buffering the incoming data packets, and data lines (L) for interconnecting the local and the remote packet switch elements (S1, S2). The interconnecting network further comprises a local and a remote arbiter (A1, A2) which are connected via control lines (CL) to the input buffers (I(1,1) . . . I(1,y), I(2,1) . . . I(2,y)), and which are formed such that they can provide that the flow control information is transmitted via the data lines (L) and the control lines (CL).

  17. Method of data communications with reduced latency

    DOE Patents [OSTI]

    Blocksome, Michael A; Parker, Jeffrey J

    2013-11-05

    Data communications with reduced latency, including: writing, by a producer, a descriptor and message data into at least two descriptor slots of a descriptor buffer, the descriptor buffer comprising allocated computer memory segmented into descriptor slots, each descriptor slot having a fixed size, the descriptor buffer having a header pointer that identifies a next descriptor slot to be processed by a DMA controller, the descriptor buffer having a tail pointer that identifies a descriptor slot for entry of a next descriptor in the descriptor buffer; recording, by the producer, in the descriptor a value signifying that message data has been written into descriptor slots; and setting, by the producer, in dependence upon the recorded value, a tail pointer to point to a next open descriptor slot.

  18. Intranode data communications in a parallel computer

    DOE Patents [OSTI]

    Archer, Charles J; Blocksome, Michael A; Miller, Douglas R; Ratterman, Joseph D; Smith, Brian E

    2013-07-23

    Intranode data communications in a parallel computer that includes compute nodes configured to execute processes, where the data communications include: allocating, upon initialization of a first process of a compute node, a region of shared memory; establishing, by the first process, a predefined number of message buffers, each message buffer associated with a process to be initialized on the compute node; sending, to a second process on the same compute node, a data communications message without determining whether the second process has been initialized, including storing the data communications message in the message buffer of the second process; and upon initialization of the second process: retrieving, by the second process, a pointer to the second process's message buffer; and retrieving, by the second process from the second process's message buffer in dependence upon the pointer, the data communications message sent by the first process.

  19. Intranode data communications in a parallel computer

    DOE Patents [OSTI]

    Archer, Charles J; Blocksome, Michael A; Miller, Douglas R; Ratterman, Joseph D; Smith, Brian E

    2014-01-07

    Intranode data communications in a parallel computer that includes compute nodes configured to execute processes, where the data communications include: allocating, upon initialization of a first process of a computer node, a region of shared memory; establishing, by the first process, a predefined number of message buffers, each message buffer associated with a process to be initialized on the compute node; sending, to a second process on the same compute node, a data communications message without determining whether the second process has been initialized, including storing the data communications message in the message buffer of the second process; and upon initialization of the second process: retrieving, by the second process, a pointer to the second process's message buffer; and retrieving, by the second process from the second process's message buffer in dependence upon the pointer, the data communications message sent by the first process.

  20. Parallel processor-based raster graphics system architecture

    DOE Patents [OSTI]

    Littlefield, Richard J.

    1990-01-01

    An apparatus for generating raster graphics images from the graphics command stream includes a plurality of graphics processors connected in parallel, each adapted to receive any part of the graphics command stream for processing the command stream part into pixel data. The apparatus also includes a frame buffer for mapping the pixel data to pixel locations and an interconnection network for interconnecting the graphics processors to the frame buffer. Through the interconnection network, each graphics processor may access any part of the frame buffer concurrently with another graphics processor accessing any other part of the frame buffer. The plurality of graphics processors can thereby transmit concurrently pixel data to pixel locations in the frame buffer.

  1. Heat exchanger-accumulator

    DOE Patents [OSTI]

    Ecker, Amir L.

    1980-01-01

    What is disclosed is a heat exchanger-accumulator for vaporizing a refrigerant or the like, characterized by an upright pressure vessel having a top, bottom and side walls; an inlet conduit eccentrically and sealingly penetrating through the top; a tubular overflow chamber disposed within the vessel and sealingly connected with the bottom so as to define an annular outer volumetric chamber for receiving refrigerant; a heat transfer coil disposed in the outer volumetric chamber for vaporizing the liquid refrigerant that accumulates there; the heat transfer coil defining a passageway for circulating an externally supplied heat exchange fluid; transferring heat efficiently from the fluid; and freely allowing vaporized refrigerant to escape upwardly from the liquid refrigerant; and a refrigerant discharge conduit penetrating sealingly through the top and traversing substantially the length of the pressurized vessel downwardly and upwardly such that its inlet is near the top of the pressurized vessel so as to provide a means for transporting refrigerant vapor from the vessel. The refrigerant discharge conduit has metering orifices, or passageways, penetrating laterally through its walls near the bottom, communicating respectively interiorly and exteriorly of the overflow chamber for controllably carrying small amounts of liquid refrigerant and oil to the effluent stream of refrigerant gas.

  2. POC-SCALE TESTING OF OIL AGGLOMERATION TECHNIQUES AND EQUIPMENT FOR FINE COAL PROCESSING

    SciTech Connect (OSTI)

    1998-01-01

    This report covers the technical progress achieved from October 1, 1997 to December 31, 1997 on the POC-Scale Testing of Oil Agglomeration Techniques and Equipment for Fine Coal Processing project. Experimental test procedures and the results related to the processing of coal fines originating from process streams generated at the Shoal Creek Mine preparation plant, owned and operated by the Drummond Company Inc. of Alabama, are described. Two samples of coal fines, namely Cyclone Overflow and Pond Fines were investigated. The batch test results showed that by applying the Aglofloat technology a significant ash removal might be achieved at a very high combustible matter recovery: · for the Cyclone Overflow sample the ash reduction was in the range 50 to 55% at combustible matter recovery about 98% · for the Pond Fines sample the ash reduction was up to 48% at combustible matter recovery up to 85%. Additional tests were carried out with the Alberta origin Luscar Mine coal, which will be used for the parametric studies of agglomeration equipment at the 250 kg/h pilot plant. The Luscar coal is very similar to the Mary Lee Coal Group (processed at Shoal Creek Mine preparation plant) in terms of rank and chemical composition.

  3. Executing a gather operation on a parallel computer

    DOE Patents [OSTI]

    Archer, Charles J.; Ratterman, Joseph D.

    2012-03-20

    Methods, apparatus, and computer program products are disclosed for executing a gather operation on a parallel computer according to embodiments of the present invention. Embodiments include configuring, by the logical root, a result buffer or the logical root, the result buffer having positions, each position corresponding to a ranked node in the operational group and for storing contribution data gathered from that ranked node. Embodiments also include repeatedly for each position in the result buffer: determining, by each compute node of an operational group, whether the current position in the result buffer corresponds with the rank of the compute node, if the current position in the result buffer corresponds with the rank of the compute node, contributing, by that compute node, the compute node's contribution data, if the current position in the result buffer does not correspond with the rank of the compute node, contributing, by that compute node, a value of zero for the contribution data, and storing, by the logical root in the current position in the result buffer, results of a bitwise OR operation of all the contribution data by all compute nodes of the operational group for the current position, the results received through the global combining network.

  4. Nanoselective area growth and characterization of dislocation-free InGaN

    Office of Scientific and Technical Information (OSTI)

    nanopyramids on AlN buffered Si(111) templates (Journal Article) | SciTech Connect Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates Citation Details In-Document Search Title: Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates We report the metal organic chemical vapor deposition growth of dislocation-free 100 nm thick hexagonal InGaN nanopyramid arrays

  5. Method for producing chemical energy

    DOE Patents [OSTI]

    Jorgensen, Betty S.; Danen, Wayne C.

    2004-09-21

    Fluoroalkylsilane-coated metal particles having a central metal core, a buffer layer surrounding the core, and a fluoroalkylsilane layer attached to the buffer layer are prepared by combining a chemically reactive fluoroalkylsilane compound with an oxide coated metal particle having a hydroxylated surface. The resulting fluoroalkylsilane layer that coats the particles provides them with excellent resistance to aging. The particles can be blended with oxidant particles to form energetic powder that releases chemical energy when the buffer layer is physically disrupted so that the reductant metal core can react with the oxidant.

  6. Energetic powder

    DOE Patents [OSTI]

    Jorgensen, Betty S.; Danen, Wayne C.

    2003-12-23

    Fluoroalkylsilane-coated metal particles. The particles have a central metal core, a buffer layer surrounding the core, and a fluoroalkylsilane layer attached to the buffer layer. The particles may be prepared by combining a chemically reactive fluoroalkylsilane compound with an oxide coated metal particle having a hydroxylated surface. The resulting fluoroalkylsilane layer that coats the particles provides them with excellent resistance to aging. The particles can be blended with oxidant particles to form energetic powder that releases chemical energy when the buffer layer is physically disrupted so that the reductant metal core can react with the oxidant.

  7. Assessment of Chemical Solution Synthesis and Properties of Gd2Zr2O7 Thin

    Office of Scientific and Technical Information (OSTI)

    Films as Buffer Layers for Second-Generation High-Temperature Superconductor Wires (Journal Article) | SciTech Connect Assessment of Chemical Solution Synthesis and Properties of Gd2Zr2O7 Thin Films as Buffer Layers for Second-Generation High-Temperature Superconductor Wires Citation Details In-Document Search Title: Assessment of Chemical Solution Synthesis and Properties of Gd2Zr2O7 Thin Films as Buffer Layers for Second-Generation High-Temperature Superconductor Wires No abstract

  8. EIS-0402: Remediation of Area IV of the Santa Susana Field Laboratory, California

    Broader source: Energy.gov [DOE]

    DOE is preparing an EIS for cleanup of Area IV, including the Energy Technology Engineering Center (ETEC), as well as the Northern Buffer Zone of the Santa Susana Field Laboratory (SSFL) in eastern Ventura County, California, approximately 29 miles north of downtown Los Angeles. (DOE’s operations bordered the Northern Buffer Zone. DOE is responsible for soil cleanup in Area IV and the Northern Buffer Zone.) In the EIS, DOE will evaluate reasonable alternatives for disposition of radiological facilities and support buildings, remediation of contaminated soil and groundwater, and disposal of all resulting waste at permitted facilities.

  9. MPI errors from cray-mpich/7.3.0

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MPI errors from cray-mpich/7.3.0 MPI errors from cray-mpich/7.3.0 January 6, 2016 by Ankit Bhagatwala A change in the MPICH2 library that now strictly enforces non-overlapping buffers in MPI collectives may cause some MPI applications that use overlapping buffers to fail at runtime. As an example, one of the routines affected is MPI_ALLGATHER. There are several possible fixes. The cleanest one is to specify MPI_IN_PLACE instead of the address of the send buffer for cases where sendbuf and

  10. Secretary Chu Announces More Than $20.5 million for Community...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... process of fats, oil and grease (FOG) and liquid ... Once the appropriate mix has been created in buffer tanks, ... Park will be an advanced storage battery and a 300kW fuel ...

  11. Stanford Synchrotron Radiation Lightsource

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanoparticulate FeS as an Effective Redox Buffer to Prevent Uraninite (UO2) Oxidation August 2013 SSRL Science Summary by Manuel Gnida Figure A major concern in the nuclear age is...

  12. Method for manufacturing electrical contacts for a thin-film semiconductor device

    DOE Patents [OSTI]

    Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

    1988-11-08

    A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

  13. Electrical contacts for a thin-film semiconductor device

    DOE Patents [OSTI]

    Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

    1989-08-08

    A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

  14. Low latency, high bandwidth data communications between compute nodes in a parallel computer

    DOE Patents [OSTI]

    Blocksome, Michael A

    2014-04-22

    Methods, systems, and products are disclosed for data transfers between nodes in a parallel computer that include: receiving, by an origin DMA on an origin node, a buffer identifier for a buffer containing data for transfer to a target node; sending, by the origin DMA to the target node, a RTS message; transferring, by the origin DMA, a data portion to the target node using a memory FIFO operation that specifies one end of the buffer from which to begin transferring the data; receiving, by the origin DMA, an acknowledgement of the RTS message from the target node; and transferring, by the origin DMA in response to receiving the acknowledgement, any remaining data portion to the target node using a direct put operation that specifies the other end of the buffer from which to begin transferring the data, including initiating the direct put operation without invoking an origin processing core.

  15. Low latency, high bandwidth data communications between compute nodes in a parallel computer

    DOE Patents [OSTI]

    Blocksome, Michael A

    2014-04-01

    Methods, systems, and products are disclosed for data transfers between nodes in a parallel computer that include: receiving, by an origin DMA on an origin node, a buffer identifier for a buffer containing data for transfer to a target node; sending, by the origin DMA to the target node, a RTS message; transferring, by the origin DMA, a data portion to the target node using a memory FIFO operation that specifies one end of the buffer from which to begin transferring the data; receiving, by the origin DMA, an acknowledgement of the RTS message from the target node; and transferring, by the origin DMA in response to receiving the acknowledgement, any remaining data portion to the target node using a direct put operation that specifies the other end of the buffer from which to begin transferring the data, including initiating the direct put operation without invoking an origin processing core.

  16. Microsoft Word - DOE-ID-INL-14-028.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    return grill on the south wall of the tank room, which is also within the radiological buffer area. Thus, ventilation is moving from a contaminated area to a clean area. The...

  17. Y-12s environment, safety and health history part 2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    would provide protection from these airborne hazards. Areas began to be flagged off and buffer areas established. Over the ensuing years the environment at the Y-12 site has been...

  18. Richland C

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    November 15 to July 31 Hanford Site Boundary Industrial Areas 0 2 4 6 8 10 Miles 0 5 10 15 20 Kilometers Natural Resource Protective Buffer Zones for FY2015 (Version 04-20-15)...

  19. Running jobs

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    has 8 GB (8192 MB) of physical memory, but, not all that memory is available to user programs. A user can change MPI buffer sizes by setting certain MPICH environment variables....

  20. Assessment of Chemical Solution Synthesis and Properties of Gd2Zr2O7...

    Office of Scientific and Technical Information (OSTI)

    Assessment of Chemical Solution Synthesis and Properties of Gd2Zr2O7 Thin Films as Buffer ... Citation Details In-Document Search Title: Assessment of Chemical Solution Synthesis and ...

  1. CX-002688: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Biomass Production and Nitrogen Recovery in 21st Century Riparian BuffersCX(s) Applied: B3.1Date: 06/10/2010Location(s): Murdock, NebraskaOffice(s): Science, Argonne Site Office

  2. Look At (Search) Large Files

    Energy Science and Technology Software Center (OSTI)

    1992-07-13

    Scanning large files for information can be time consuming and expensive when using edit utilities on large mainframe computers. The reason is that editors must usually load the file into a buffer.

  3. LANL: AOT & LANSCE The Pulse December 2009

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Team members include David Barlow (AOT- ABS); Jeffrey Hill, Martin Pieck, and John Power ... mm thick gap where the subphase (deuterated phosphate buffered saline, dPBS) is injected. ...

  4. V-017: Apache Tomcat Security Bypass and Denial of Service Vulnerabili...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Service). 1) An error within the "parseHeaders()" function (InternalNioInputBuffer.java) when parsing request headers does not properly verify the permitted size and can be...

  5. New Multijunction Design Leads to Ultra-Efficient Solar Cell...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Four-junction III-V multijunction cell uses buffer layers and other innovations to reach 45.6% efficiency at 690 suns NREL scientists have shown that four-junction solar cells ...

  6. Molecular catalytic coal liquid conversion. Quarterly status...

    Office of Scientific and Technical Information (OSTI)

    With regards to Task 1, the mechanism of the hydrogenation of aromatic compounds catalyzed by 1,5-HDRhClsub 2buffer system in the presence of small amount of surfactant under ...

  7. Appendix B: VFT Design Drawings; Appendix C: MIcrobac Laboratories...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and results conform to ISO 17025 and TNI NELAC ... Code Description Certification Number Expires Microbac ... A 7.00 pH buffer standard was measured with the samples. A ...

  8. Savannah River Ecology Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rainbow Bay Amphibian Reserve This 87.5-acre (35.4 ha) Set-Aside Area is comprised of Rainbow Bay, a 200-m forested buffer area that encircles the entire bay, and a wedge-shaped...

  9. Savannah River Ecology Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Little Cypress Bay This 68.4-acre (27.7 ha) Set-Aside is comprised of Little Cypress Bay and a relatively undisturbed 200-m buffer zone of maturing pine and upland hardwood...

  10. Effecting a broadcast with an allreduce operation on a parallel computer

    DOE Patents [OSTI]

    Almasi, Gheorghe; Archer, Charles J.; Ratterman, Joseph D.; Smith, Brian E.

    2010-11-02

    A parallel computer comprises a plurality of compute nodes organized into at least one operational group for collective parallel operations. Each compute node is assigned a unique rank and is coupled for data communications through a global combining network. One compute node is assigned to be a logical root. A send buffer and a receive buffer is configured. Each element of a contribution of the logical root in the send buffer is contributed. One or more zeros corresponding to a size of the element are injected. An allreduce operation with a bitwise OR using the element and the injected zeros is performed. And the result for the allreduce operation is determined and stored in each receive buffer.

  11. Direct memory access transfer completion notification

    DOE Patents [OSTI]

    Archer, Charles J.; Blocksome, Michael A.; Parker, Jeffrey J.

    2011-02-15

    DMA transfer completion notification includes: inserting, by an origin DMA engine on an origin node in an injection first-in-first-out (`FIFO`) buffer, a data descriptor for an application message to be transferred to a target node on behalf of an application on the origin node; inserting, by the origin DMA engine, a completion notification descriptor in the injection FIFO buffer after the data descriptor for the message, the completion notification descriptor specifying a packet header for a completion notification packet; transferring, by the origin DMA engine to the target node, the message in dependence upon the data descriptor; sending, by the origin DMA engine, the completion notification packet to a local reception FIFO buffer using a local memory FIFO transfer operation; and notifying, by the origin DMA engine, the application that transfer of the message is complete in response to receiving the completion notification packet in the local reception FIFO buffer.

  12. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    fuel cycle and fuel materials (2) radioactive wastes (2) sensitivity (2) simulation (2) water (2) arsenic (1) bentonite (1) boom clay (1) brine leakage (1) brines (1) buffers (1)...

  13. Chemical solution deposition method of fabricating highly aligned MgO templates

    DOE Patents [OSTI]

    Paranthaman, Mariappan Parans (Knoxville, TN); Sathyamurthy, Srivatsan (Knoxville, TN); Aytug, Tolga (Knoxville, TN); Arendt, Paul N (Los Alamos, NM); Stan, Liliana (Los Alamos, NM); Foltyn, Stephen R (Los Alamos, NM)

    2012-01-03

    A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La.sub.2Zr.sub.2O.sub.7 or Gd.sub.2Zr.sub.2O.sub.7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

  14. Releases from the Heating Oil Reserve

    Broader source: Energy.gov [DOE]

    The Northeast Home Heating Oil Reserve (NEHHOR), a one million barrel supply of ultra low sulfur distillate (diesel), was created to build a buffer to allow commercial companies to compensate for...

  15. Programming Tuning Options on Hopper

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for its internal buffers too. When to Use Huge Pages For MPI applications, map the static data andor heap onto huge pages. For SHMEM applications, map the static data and...

  16. Low latency, high bandwidth data communications between compute nodes in a parallel computer

    DOE Patents [OSTI]

    Blocksome, Michael A

    2013-07-02

    Methods, systems, and products are disclosed for data transfers between nodes in a parallel computer that include: receiving, by an origin DMA on an origin node, a buffer identifier for a buffer containing data for transfer to a target node; sending, by the origin DMA to the target node, a RTS message; transferring, by the origin DMA, a data portion to the target node using a memory FIFO operation that specifies one end of the buffer from which to begin transferring the data; receiving, by the origin DMA, an acknowledgement of the RTS message from the target node; and transferring, by the origin DMA in response to receiving the acknowledgement, any remaining data portion to the target node using a direct put operation that specifies the other end of the buffer from which to begin transferring the data, including initiating the direct put operation without invoking an origin processing core.

  17. Direct memory access transfer completion notification

    DOE Patents [OSTI]

    Chen, Dong; Giampapa, Mark E.; Heidelberger, Philip; Kumar, Sameer; Parker, Jeffrey J.; Steinmacher-Burow, Burkhard D.; Vranas, Pavlos

    2010-07-27

    Methods, compute nodes, and computer program products are provided for direct memory access (`DMA`) transfer completion notification. Embodiments include determining, by an origin DMA engine on an origin compute node, whether a data descriptor for an application message to be sent to a target compute node is currently in an injection first-in-first-out (`FIFO`) buffer in dependence upon a sequence number previously associated with the data descriptor, the total number of descriptors currently in the injection FIFO buffer, and the current sequence number for the newest data descriptor stored in the injection FIFO buffer; and notifying a processor core on the origin DMA engine that the message has been sent if the data descriptor for the message is not currently in the injection FIFO buffer.

  18. Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al{sub 2}O{sub 3}(0001) substrates

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

    2007-05-01

    Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al{sub 2}O{sub 3}(0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively.

  19. Savannah River Ecology Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Set-Aside is a 81.6-acre (33 ha) Area comprised of a semi-permanent, open-waterherbaceous pond surrounded by a partial buffer area of various pine and hardwood plant communities. ...

  20. Hydrocarbon-free resonance transition 795-nm rubidium laser

    SciTech Connect (OSTI)

    Wu, S Q; Soules, T F; Page, R H; Mitchell, S C; Kanz, V K; Beach, R J

    2008-01-09

    An optical resonance transition rubidium laser (5{sup 2}P{sub 1/2} {yields} 5{sup 2}S{sub 1/2}) is demonstrated with a hydrocarbon-free buffer gas. Prior demonstrations of alkali resonance transition lasers have used ethane as either the buffer gas or a buffer gas component to promote rapid fine-structure mixing. However, our experience suggests that the alkali vapor reacts with the ethane producing carbon as one of the reaction products. This degrades long term laser reliability. Our recent experimental results with a 'clean' helium-only buffer gas system pumped by a Ti:sapphire laser demonstrate all the advantages of the original alkali laser system, but without the reliability issues associated with the use of ethane.

  1. News Item

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of carbon dioxide between the atmosphere and the oceans - and in the buffering of blood and other bodily fluids. However, the short life span of carbonic acid in water has...

  2. Electrolytic method to make alkali alcoholates using ion conducting alkali electrolyte/separator

    DOE Patents [OSTI]

    Joshi, Ashok V.; Balagopal, Shekar; Pendelton, Justin

    2011-12-13

    Alkali alcoholates, also called alkali alkoxides, are produced from alkali metal salt solutions and alcohol using a three-compartment electrolytic cell. The electrolytic cell includes an anolyte compartment configured with an anode, a buffer compartment, and a catholyte compartment configured with a cathode. An alkali ion conducting solid electrolyte configured to selectively transport alkali ions is positioned between the anolyte compartment and the buffer compartment. An alkali ion permeable separator is positioned between the buffer compartment and the catholyte compartment. The catholyte solution may include an alkali alcoholate and alcohol. The anolyte solution may include at least one alkali salt. The buffer compartment solution may include a soluble alkali salt and an alkali alcoholate in alcohol.

  3. ARM Airborne Continuous carbon dioxide measurements (Dataset...

    Office of Scientific and Technical Information (OSTI)

    The AOS manifold also houses flow meters, pressure sensors and control valves. The exhaust from the analyzer flows into a buffer volume which allows for precise pressure control of ...

  4. QBR_2014-01-28_BB_NWChem.pptx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Burst Buffer Use at NERSC --- 1 --- Jan 2 8, 2 015 NWChem- Open Source High Performance Computational Chemistry Software * NWChem i s d eveloped b y a c onsor5um o f d evelopers...

  5. Long-Term Surveillance and Maintenance at the Rocky Flats Site...

    Energy Savers [EERE]

    as a buffer zone surrounding the former industrial area, was transferred to the U.S. Fish and Wildlife Service in July 2007 for a national wildlife refuge. DOE's Office of...

  6. Simulating and evaluating best management practices for integrated landscape management scenarios in biofuel feedstock production

    SciTech Connect (OSTI)

    Ha, Miae; Wu, May

    2015-09-08

    Sound crop and land management strategies can maintain land productivity and improve the environmental sustainability of agricultural crop and feedstock production. With this study, it evaluates a strategy of incorporating landscape design and management concepts into bioenergy feedstock production. It examines the effect of land conversion and agricultural best management practices (BMPs) on water quality (nutrients and suspended sediments) and hydrology. The strategy was applied to the watershed of the South Fork Iowa River in Iowa, where the focus was on converting low-productivity land to provide cellulosic biomass and implementing riparian buffers. The Soil and Water Assessment Tool (SWAT) was employed to simulate the impact at watershed and sub-basin scales. The study compared the representation of buffers by using trapping efficiency and area ratio methods in SWAT. Landscape design and management scenarios were developed to quantify water quality under (i) current land use, (ii) partial land conversion to switchgrass, and (iii) riparian buffer implementation. Results show that implementation of vegetative barriers and riparian buffer can trap the loss of total nitrogen, total phosphorus, and sediment significantly. The effect increases with the increase of buffer area coverage. Implementing riparian buffer at 30 m width is able to produce 4 million liters of biofuels. When low-productivity land (15.2% of total watershed land area) is converted to grow switchgrass, suspended sediment, total nitrogen, total phosphorus, and nitrate loadings are reduced by 69.3%, 55.5%, 46.1%, and 13.4%, respectively. The results highlight the significant role of lower-productivity land and buffers in cellulosic biomass and provide insights into the design of an integrated landscape with a conservation buffer for future bioenergy feedstock production.

  7. Series interconnected photovoltaic cells and method for making same

    DOE Patents [OSTI]

    Albright, S.P.; Chamberlin, R.R.; Thompson, R.A.

    1995-01-31

    A novel photovoltaic module and method for constructing the same are disclosed. The module includes a plurality of photovoltaic cells formed on a substrate and laterally separated by interconnection regions. Each cell includes a bottom electrode, a photoactive layer and a top electrode layer. Adjacent cells are connected in electrical series by way of a conductive-buffer line. The buffer line is also useful in protecting the bottom electrode against severing during downstream layer cutting processes. 11 figs.

  8. SALICYLATE PROCESS FOR THORIUM SEPARATION FROM RARE EARTHS

    DOE Patents [OSTI]

    Cowan, G.A.

    1959-08-25

    The separation of thorium from rare earths is accomplished by forming an aqueous solution of salts of thorium and rare earths and sufficient acetate buffer to provide a pH of between 2 and 5, adding an ammonium salicylate to the aqueous buffered solution, contacting the resultant solution with a substantially water-immiscible organic solvent mixture of an ether and an ester, and separating the solvent extract phase containing thorium salicylate from the aqueous phase containing the rare earths.

  9. Inertial confinement fusion | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Superconducting Precursor Powders (Technical Report) | SciTech Connect Technical Report: Inert Gas Buffered Milling and Particle Size Separation of μm-Scale Superconducting Precursor Powders Citation Details In-Document Search Title: Inert Gas Buffered Milling and Particle Size Separation of μm-Scale Superconducting Precursor Powders The project developed an aerosol system for the met milling and particle size separation of the precursor powders used in fabrication of powder-in-tube

  10. Simulating and evaluating best management practices for integrated landscape management scenarios in biofuel feedstock production

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ha, Miae; Wu, May

    2015-09-08

    Sound crop and land management strategies can maintain land productivity and improve the environmental sustainability of agricultural crop and feedstock production. With this study, it evaluates a strategy of incorporating landscape design and management concepts into bioenergy feedstock production. It examines the effect of land conversion and agricultural best management practices (BMPs) on water quality (nutrients and suspended sediments) and hydrology. The strategy was applied to the watershed of the South Fork Iowa River in Iowa, where the focus was on converting low-productivity land to provide cellulosic biomass and implementing riparian buffers. The Soil and Water Assessment Tool (SWAT) wasmore » employed to simulate the impact at watershed and sub-basin scales. The study compared the representation of buffers by using trapping efficiency and area ratio methods in SWAT. Landscape design and management scenarios were developed to quantify water quality under (i) current land use, (ii) partial land conversion to switchgrass, and (iii) riparian buffer implementation. Results show that implementation of vegetative barriers and riparian buffer can trap the loss of total nitrogen, total phosphorus, and sediment significantly. The effect increases with the increase of buffer area coverage. Implementing riparian buffer at 30 m width is able to produce 4 million liters of biofuels. When low-productivity land (15.2% of total watershed land area) is converted to grow switchgrass, suspended sediment, total nitrogen, total phosphorus, and nitrate loadings are reduced by 69.3%, 55.5%, 46.1%, and 13.4%, respectively. The results highlight the significant role of lower-productivity land and buffers in cellulosic biomass and provide insights into the design of an integrated landscape with a conservation buffer for future bioenergy feedstock production.« less

  11. EIS-0402: Amended Notice of Intent to Prepare an Environmental Impact

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Statement | Department of Energy Amended Notice of Intent to Prepare an Environmental Impact Statement EIS-0402: Amended Notice of Intent to Prepare an Environmental Impact Statement Remediation of Area IV and the Northern Buffer Zone of the Santa Susana Field Laboratory DOE is amending its 2008 notice of intent to prepare an environmental impact statement (EIS) for cleanup of Area IV, including the Energy Technology Engineering Center (ETEC), as well as the Northern Buffer Zone of the Santa

  12. Interpolator for numerically controlled machine tools

    DOE Patents [OSTI]

    Bowers, Gary L.; Davenport, Clyde M.; Stephens, Albert E.

    1976-01-01

    A digital differential analyzer circuit is provided that depending on the embodiment chosen can carry out linear, parabolic, circular or cubic interpolation. In the embodiment for parabolic interpolations, the circuit provides pulse trains for the X and Y slide motors of a two-axis machine to effect tool motion along a parabolic path. The pulse trains are generated by the circuit in such a way that parabolic tool motion is obtained from information contained in only one block of binary input data. A part contour may be approximated by one or more parabolic arcs. Acceleration and initial velocity values from a data block are set in fixed bit size registers for each axis separately but simultaneously and the values are integrated to obtain the movement along the respective axis as a function of time. Integration is performed by continual addition at a specified rate of an integrand value stored in one register to the remainder temporarily stored in another identical size register. Overflows from the addition process are indicative of the integral. The overflow output pulses from the second integration may be applied to motors which position the respective machine slides according to a parabolic motion in time to produce a parabolic machine tool motion in space. An additional register for each axis is provided in the circuit to allow "floating" of the radix points of the integrand registers and the velocity increment to improve position accuracy and to reduce errors encountered when the acceleration integrand magnitudes are small when compared to the velocity integrands. A divider circuit is provided in the output of the circuit to smooth the output pulse spacing and prevent motor stall, because the overflow pulses produced in the binary addition process are spaced unevenly in time. The divider has the effect of passing only every nth motor drive pulse, with n being specifiable. The circuit inputs (integrands, rates, etc.) are scaled to give exactly n times the desired number of pulses out, in order to compensate for the divider.

  13. Fuel cell and system for supplying electrolyte thereto

    DOE Patents [OSTI]

    Adlhart, Otto J. (Tenafly, NJ); Feigenbaum, Haim (Highland Park, NJ)

    1984-01-01

    An electrolyte distribution and supply system for use with a fuel cell having means for drawing electrolyte therein is formed by a set of containers of electrolyte joined to respective fuel cells in a stack of such cells. The electrolyte is separately stored so as to provide for electrical isolation between electrolytes of the individual cells of the stack. Individual storage compartments are coupled by capillary tubes to the respective fuel cells. Hydrostatic pressure is maintained individually for each of the fuel cells by separately elevating each compartment of the storing means to a specific height above the corresponding fuel cell which is to be fed from that compartment of the storing means. The individual compartments are filled with electrolyte by allowing the compartments to overflow thereby maintaining the requisite depth of electrolyte in each of the storage compartments.

  14. Sandia National Laboratories, California sewer system management plan.

    SciTech Connect (OSTI)

    Holland, Robert C.

    2010-02-01

    A Sewer System Management Plan (SSMP) is required by the State Water Resources Control Board (SWRCB) Order No. 2006-0003-DWQ Statewide General Waste Discharge Requirements (WDR) for Sanitary Sewer Systems (General Permit). DOE, National Nuclear Security Administration (NNSA), Sandia Site Office has filed a Notice of Intent to be covered under this General Permit. The General Permit requires a proactive approach to reduce the number and frequency of sanitary sewer overflows (SSOs) within the State. SSMPs must include provisions to provide proper and efficient management, operation, and maintenance of sanitary sewer systems and must contain a spill response plan. Elements of this Plan are under development in accordance with the SWRCB's schedule.

  15. Hand portable thin-layer chromatography system

    DOE Patents [OSTI]

    Haas, Jeffrey S.; Kelly, Fredrick R.; Bushman, John F.; Wiefel, Michael H.; Jensen, Wayne A.

    2000-01-01

    A hand portable, field-deployable thin-layer chromatography (TLC) unit and a hand portable, battery-operated unit for development, illumination, and data acquisition of the TLC plates contain many miniaturized features that permit a large number of samples to be processed efficiently. The TLC unit includes a solvent tank, a holder for TLC plates, and a variety of tool chambers for storing TLC plates, solvent, and pipettes. After processing in the TLC unit, a TLC plate is positioned in a collapsible illumination box, where the box and a CCD camera are optically aligned for optimal pixel resolution of the CCD images of the TLC plate. The TLC system includes an improved development chamber for chemical development of TLC plates that prevents solvent overflow.

  16. Recombination device for storage batteries

    DOE Patents [OSTI]

    Kraft, H.; Ledjeff, K.

    1984-01-01

    A recombination device including a gas-tight enclosure connected to receive the discharge gases from a rechargeable storage battery. Catalytic material for the recombination of hydrogen and oxygen to form water is supported within the enclosure. The enclosure is sealed from the atmosphere by a liquid seal including two vertical chambers interconnected with an inverted U-shaped overflow tube. The first chamber is connected at its upper portion to the enclosure and the second chamber communicates at its upper portion with the atmosphere. If the pressure within the enclosure differs as overpressure or vacuum by more than the liquid level, the liquid is forced into one of the two chambers and the overpressure is vented or the vacuum is relieved. The recombination device also includes means for returning recombined liquid to the battery and for absorbing metal hydrides.

  17. Municipal solid waste to electricity recommendations for project in Bangkok, Thailand

    SciTech Connect (OSTI)

    Not Available

    1985-09-01

    Bangkok Metropolitan Administration (BMA) is charged with the responsibility of public cleansing and waste disposal in the metropolitan area. BMA operates 600 trucks which collect the waste twice a day and dump it at its three sites located in the Huai Kwong, Bangkok Noi and Rataburana districts. Presently these trucks collect 3,000 metric tons of garbage per day. At the waste dump sites, which are rapidly overflowing, BMA presently operates four compost plants, three with input capacity of 320 tons per day each and a fourth which uses about 160 tons of garbage per day--thus utilizing about 1,120 tons of garbage per day. Creation of new sites would require going even farther away from the city, resulting in excessive transportation costs.

  18. Continuous magnetic separator and process

    DOE Patents [OSTI]

    Oder, Robin R.; Jamison, Russell E.

    2008-04-22

    A continuous magnetic separator and process for separating a slurry comprising magnetic particles into a clarified stream and a thickened stream. The separator has a container with a slurry inlet, an overflow outlet for the discharge of the clarified slurry stream, and an underflow outlet for the discharge of a thickened slurry stream. Magnetic particles in the slurry are attracted to, and slide down, magnetic rods within the container. The slurry is thus separated into magnetic concentrate and clarified slurry. Flow control means can be used to control the ratio of the rate of magnetic concentrate to the rate of clarified slurry. Feed control means can be used to control the rate of slurry feed to the slurry inlet.

  19. Dual manifold heat pipe evaporator

    DOE Patents [OSTI]

    Adkins, D.R.; Rawlinson, K.S.

    1994-01-04

    An improved evaporator section is described for a dual manifold heat pipe. Both the upper and lower manifolds can have surfaces exposed to the heat source which evaporate the working fluid. The tubes in the tube bank between the manifolds have openings in their lower extensions into the lower manifold to provide for the transport of evaporated working fluid from the lower manifold into the tubes and from there on into the upper manifold and on to the condenser portion of the heat pipe. A wick structure lining the inner walls of the evaporator tubes extends into both the upper and lower manifolds. At least some of the tubes also have overflow tubes contained within them to carry condensed working fluid from the upper manifold to pass to the lower without spilling down the inside walls of the tubes. 1 figure.

  20. Recombination device for storage batteries

    DOE Patents [OSTI]

    Kraft, Helmut; Ledjeff, Konstantin

    1985-01-01

    A recombination device including a gas-tight enclosure connected to receive he discharge gases from a rechargeable storage battery. Catalytic material for the recombination of hydrogen and oxygen to form water is supported within the enclosure. The enclosure is sealed from the atmosphere by a liquid seal including two vertical chambers interconnected with an inverted U-shaped overflow tube. The first chamber is connected at its upper portion to the enclosure and the second chamber communicates at its upper portion with the atmosphere. If the pressure within the enclosure differs as overpressure or vacuum by more than the liquid level, the liquid is forced into one of the two chambers and the overpressure is vented or the vacuum is relieved. The recombination device also includes means for returning recombined liquid to the battery and for absorbing metal hydrides.

  1. Fuel cell and system for supplying electrolyte thereto utilizing cascade feed

    DOE Patents [OSTI]

    Feigenbaum, Haim

    1984-01-01

    An electrolyte distribution supply system for use with a fuel cell having a wicking medium for drawing electrolyte therein is formed by a set of containers of electrolyte joined to respective fuel cells or groups thereof in a stack of such cells. The electrolyte is separately stored so as to provide for electrical isolation between electrolytes of the individual cells or groups of cells of the stack. Individual storage compartments are coupled by individual tubes, the ends of the respective tubes terminating on the wicking medium in each of the respective fuel cells. The individual compartments are filled with electrolyte by allowing the compartments to overflow such as in a cascading fashion thereby maintaining the requisite depth of electrolyte in each of the storage compartments. The individual compartments can also contain packed carbon fibers to provide a three stage electrolyte distribution system.

  2. Comparative safety analysis of LNG storage tanks

    SciTech Connect (OSTI)

    Fecht, B.A.; Gates, T.E.; Nelson, K.O.; Marr, G.D.

    1982-07-01

    LNG storage tank design and response to selected release scenarios were reviewed. The selection of the scenarios was based on an investigation of potential hazards as cited in the literature. A review of the structure of specific LNG storage facilities is given. Scenarios initially addressed included those that most likely emerge from the tank facility itself: conditions of overfill and overflow as related to liquid LNG content levels; over/underpressurization at respective tank vapor pressure boundaries; subsidence of bearing soil below tank foundations; and crack propagation in tank walls due to possible exposure of structural material to cryogenic temperatures. Additional scenarios addressed include those that result from external events: tornado induced winds and pressure drops; exterior tank missile impact with tornado winds and rotating machinery being the investigated mode of generation; thermal response due to adjacent fire conditions; and tank response due to intense seismic activity. Applicability of each scenario depended heavily on the specific tank configurations and material types selected. (PSB)

  3. Dual manifold heat pipe evaporator

    DOE Patents [OSTI]

    Adkins, Douglas R. (Albuquerque, NM); Rawlinson, K. Scott (Albuquerque, NM)

    1994-01-01

    An improved evaporator section for a dual manifold heat pipe. Both the upper and lower manifolds can have surfaces exposed to the heat source which evaporate the working fluid. The tubes in the tube bank between the manifolds have openings in their lower extensions into the lower manifold to provide for the transport of evaporated working fluid from the lower manifold into the tubes and from there on into the upper manifold and on to the condenser portion of the heat pipe. A wick structure lining the inner walls of the evaporator tubes extends into both the upper and lower manifolds. At least some of the tubes also have overflow tubes contained within them to carry condensed working fluid from the upper manifold to pass to the lower without spilling down the inside walls of the tubes.

  4. Illumination box and camera system

    DOE Patents [OSTI]

    Haas, Jeffrey S.; Kelly, Fredrick R.; Bushman, John F.; Wiefel, Michael H.; Jensen, Wayne A.; Klunder, Gregory L.

    2002-01-01

    A hand portable, field-deployable thin-layer chromatography (TLC) unit and a hand portable, battery-operated unit for development, illumination, and data acquisition of the TLC plates contain many miniaturized features that permit a large number of samples to be processed efficiently. The TLC unit includes a solvent tank, a holder for TLC plates, and a variety of tool chambers for storing TLC plates, solvent, and pipettes. After processing in the TLC unit, a TLC plate is positioned in a collapsible illumination box, where the box and a CCD camera are optically aligned for optimal pixel resolution of the CCD images of the TLC plate. The TLC system includes an improved development chamber for chemical development of TLC plates that prevents solvent overflow.

  5. Solids precipitation and polymerization of asphaltenes in coal-derived liquids

    DOE Patents [OSTI]

    Kydd, Paul H.

    1984-01-01

    The precipitation and removal of particulate solids from coal-derived liquids by adding a process-derived anti-solvent liquid fraction and continuing the precipitation process at a temperature above the melting point of the mixed liquids for sufficient time to allow the asphaltenes to polymerize and solids to settle at atmospheric pressure conditions. The resulting clarified light hydrocarbon overflow liquid contains less than about 0.02 W % ash and is suitable as turbine fuel or as boiler fuel for burning without particulate emission control equipment. An underflow liquid fraction containing less than about 0.1 W % solids along with low sulfur and nitrogen concentrations is suitable as a boiler fuel with emission control equipment.

  6. Method and apparatus for improved melt flow during continuous strip casting

    DOE Patents [OSTI]

    Follstaedt, D.W.; King, E.L.; Schneider, K.C.

    1991-11-12

    The continuous casting of metal strip using the melt overflow process is improved by controlling the weir conditions in the nozzle to provide a more uniform flow of molten metal across the width of the nozzle and reducing the tendency for freezing of metal along the interface with refractory surfaces. A weir design having a sloped rear wall and tapered sidewalls and critical gap controls beneath the weir has resulted in the drastic reduction in edge tearing and a significant improvement in strip uniformity. The floor of the container vessel is preferably sloped and the gap between the nozzle and the rotating substrate is critically controlled. The resulting flow patterns observed with the improved casting process have reduced thermal gradients in the bath, contained surface slag and eliminated undesirable solidification near the discharge area by increasing the flow rates at those points. 8 figures.

  7. Method and apparatus for improved melt flow during continuous strip casting

    DOE Patents [OSTI]

    Follstaedt, Donald W.; King, Edward L.; Schneider, Ken C.

    1991-11-12

    The continuous casting of metal strip using the melt overflow process is improved by controlling the weir conditions in the nozzle to provide a more uniform flow of molten metal across the width of the nozzle and reducing the tendency for freezing of metal along the interface with refractory surfaces. A weir design having a sloped rear wall and tapered sidewalls and critical gap controls beneath the weir has resulted in the drastic reduction in edge tearing and a significant improvement in strip uniformity. The floor of the container vessel is preferably sloped and the gap between the nozzle and the rotating substrate is critically controlled. The resulting flow patterns observed with the improved casting process have reduced thermal gradients in the bath, contained surface slag and eliminated undesirable solidification near the discharge area by increasing the flow rates at those points.

  8. A wind accretion model for HLX-1

    SciTech Connect (OSTI)

    Miller, M. Coleman; Farrell, Sean A.; Maccarone, Thomas J.

    2014-06-20

    The brightest ultraluminous X-ray source currently known, HLX-1, has been observed to undergo five outburst cycles. The periodicity of these outbursts, and their high inferred maximum accretion rates of ?few 10{sup 4} M {sub ?} yr{sup 1}, naturally suggest Roche lobe overflow at the pericenter of an eccentric orbit. It is, however, difficult for the Roche lobe overflow model to explain the apparent trend of decreasing decay times over the different outbursts while the integrated luminosity also drops. Thus, if the trend is real rather than simply being a reflection of the complex physics of accretion disks, a different scenario may be necessary. We present a speculative model in which, within the last decade, a high-mass giant star had most of its envelope tidally stripped by the ?10{sup 45} M {sub ?} black hole in HLX-1, and the remaining core plus low-mass hydrogen envelope now feeds the hole with a strong wind. This model can explain the short decay time of the disk, and could explain the fast decrease in decay time if the wind speed changes with time. A key prediction of this model is that there will be excess line absorption due to the wind; our analysis does in fact find a flux deficit in the ?0.9-1.1 keV range that is consistent with predictions, albeit at low significance. If this idea is correct, we also expect that within years to dacades the bound material from the original disruption will return and will make HLX-1 a persistently bright source.

  9. Microscopic analysis of irradiated AGR-1 coated particle fuel compacts

    SciTech Connect (OSTI)

    Scott Ploger; Paul Demkowicz; John Hunn; Robert Morris

    2012-10-01

    The AGR-1 experiment involved irradiation of 72 TRISO-coated particle fuel compacts to a peak burnup of 19.5% FIMA with no in-pile failures observed out of 3105 total particles. Irradiated AGR-1 fuel compacts have been cross-sectioned and analyzed with optical microscopy to characterize kernel, buffer, and coating behavior. Five compacts have been examined so far, spanning a range of irradiation conditions (burnup, fast fluence, and irradiation temperature) and including all four TRISO coating variations irradiated in the AGR-1 experiment. The cylindrical specimens were sectioned both transversely and longitudinally, then polished to expose between approximately 40-80 individual particles on each mount. The analysis focused primarily on kernel swelling and porosity, buffer densification and fracturing, buffer-IPyC debonding, and fractures in the IPyC and SiC layers. Characteristic morphologies have been identified, over 800 particles have been classified, and spatial distributions of particle types have been mapped. No significant spatial patterns were discovered in these cross sections. However, some trends were found between morphological types and certain behavioral aspects. Buffer fractures were found in approximately 23% of the particles, and these fractures often resulted in unconstrained kernel swelling into the open cavities. Fractured buffers and buffers that stayed bonded to IPyC layers appear related to larger pore size in kernels. Buffer-IPyC interface integrity evidently factored into initiation of rare IPyC fractures. Fractures through part of the SiC layer were found in only three particles, all in conjunction with IPyC-SiC debonding. Compiled results suggest that the deliberate coating fabrication variations influenced the frequencies of IPyC fractures, IPyC-SiC debonds, and SiC fractures.

  10. Laminate articles on biaxially textured metal substrates

    DOE Patents [OSTI]

    Beach, David B.; Morrell, Jonathan S.; Paranthaman, Mariappan; Chirayil, Thomas; Specht, Eliot D.; Goyal, Amit

    2003-12-16

    A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (R.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  11. Method for compression of data using single pass LZSS and run-length encoding

    DOE Patents [OSTI]

    Berlin, Gary J.

    1997-01-01

    A method used preferably with LZSS-based compression methods for compressing a stream of digital data. The method uses a run-length encoding scheme especially suited for data strings of identical data bytes having large run-lengths, such as data representing scanned images. The method reads an input data stream to determine the length of the data strings. Longer data strings are then encoded in one of two ways depending on the length of the string. For data strings having run-lengths less than 18 bytes, a cleared offset and the actual run-length are written to an output buffer and then a run byte is written to the output buffer. For data strings of 18 bytes or longer, a set offset and an encoded run-length are written to the output buffer and then a run byte is written to the output buffer. The encoded run-length is written in two parts obtained by dividing the run length by a factor of 255. The first of two parts of the encoded run-length is the quotient; the second part is the remainder. Data bytes that are not part of data strings of sufficient length are written directly to the output buffer.

  12. Method for compression of data using single pass LZSS and run-length encoding

    DOE Patents [OSTI]

    Berlin, G.J.

    1994-01-01

    A method used preferably with LZSS-based compression methods for compressing a stream of digital data. The method uses a run-length encoding scheme especially suited for data strings of identical data bytes having large run-lengths, such as data representing scanned images. The method reads an input data stream to determine the length of the data strings. Longer data strings are then encoded in one of two ways depending on the length of the string. For data strings having run-lengths less than 18 bytes, a cleared offset and the actual run-length are written to an output buffer and then a run byte is written to the output buffer. For data strings of 18 bytes or longer, a set offset and an encoded run-length are written to the output buffer and then a run byte is written to the output buffer. The encoded run-length is written in two parts obtained by dividing the run length by a factor of 255. The first of two parts of the encoded run-length is the quotient; the second part is the remainder. Data bytes that are not part of data strings of sufficient length are written directly to the output buffer.

  13. Laminate article

    DOE Patents [OSTI]

    Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

    2002-01-01

    A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  14. Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

    DOE Patents [OSTI]

    Findikoglu, Alp T. (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM); Arendt, Paul N. (Los Alamos, NM); Matias, Vladimir (Santa Fe, NM); Choi, Woong (Los Alamos, NM)

    2009-10-27

    A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

  15. Method for compression of data using single pass LZSS and run-length encoding

    DOE Patents [OSTI]

    Berlin, G.J.

    1997-12-23

    A method used preferably with LZSS-based compression methods for compressing a stream of digital data is disclosed. The method uses a run-length encoding scheme especially suited for data strings of identical data bytes having large run-lengths, such as data representing scanned images. The method reads an input data stream to determine the length of the data strings. Longer data strings are then encoded in one of two ways depending on the length of the string. For data strings having run-lengths less than 18 bytes, a cleared offset and the actual run-length are written to an output buffer and then a run byte is written to the output buffer. For data strings of 18 bytes or longer, a set offset and an encoded run-length are written to the output buffer and then a run byte is written to the output buffer. The encoded run-length is written in two parts obtained by dividing the run length by a factor of 255. The first of two parts of the encoded run-length is the quotient; the second part is the remainder. Data bytes that are not part of data strings of sufficient length are written directly to the output buffer. 3 figs.

  16. A practical perspective on the implementation of hyperdynamics for accelerated simulation

    SciTech Connect (OSTI)

    Kim, Woo Kyun; Falk, Michael L.

    2014-01-28

    Consideration is given to several practical issues arising during the implementation of hyperdynamics, a methodology that extends the time scale of the conventional molecular dynamics simulation potentially by orders of magnitude. First, the methodology is reformulated in terms of the transition rate based on the buffer region approach (buffer rate), which can describe transitions in more general contexts than the transition state theory (TST). It will be shown that hyperdynamics can exactly preserve the buffer rate as well as the TST rate, which broadens the scope of the method. Next, the originally proposed scheme to compute the boost factor on-the-fly is reviewed and some alternative methods, one of which uses the umbrella sampling method, are presented. Finally, the methodology is validated in the context of a 1-dimensional example potential and a 3-dimensional simulation of the motion of an atomic force microscope tip moving along a surface.

  17. Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots

    SciTech Connect (OSTI)

    Huang, S.; Kim, S. J.; Pan, X. Q.; Goldman, R. S.

    2014-07-21

    We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.

  18. ZnMgO by APCVD Enabling High-Performance Mid-bandgap CIGS on Polyimide Modules: October 2009--October 2010

    SciTech Connect (OSTI)

    Woods, L.

    2011-04-01

    This Pre-Incubator project was designed to increase the 'real world' CIGS based photovoltaic module performance and decrease the Levelized Cost of Energy (LCOE) of systems utilizing those modules compared to our traditional CIGS based photovoltaic modules. This was enabled by a) increasing the CIGS bandgap and b) developing better matched device finishing layers to the mid-bandgap CIGS based photovoltaics; including window and buffer layers (and eventually the TCO). Incremental progress in the novel device performance was demonstrated throughout the program, and ultimately achieved performance results that exceeded the milestones ahead of schedule. Metal-oxide buffer layer devices with mid-bandgap CIGS alloys on polyimide substrates were produced with efficiencies of over 12%. Corresponding mid-bandgap devices with CdS buffers produced over 13% efficient devices. Furthermore, no obvious degradation in the device performance has been observed to date, after proper storage ambient of the different types of unencapsulated devices were identified.

  19. Long life hydrocarbon conversion catalyst and method of making

    DOE Patents [OSTI]

    Tonkovich, Anna Lee Y [Pasco, WA; Wang, Yong [Richland, WA; Gao, Yufei [Kennewick, WA

    2002-11-12

    The present invention includes a catalyst that has at least four layers, (1) porous support, (2) buffer layer, (3) interfacial layer, and optionally (4) catalyst layer. The buffer layer provides a transition of thermal expansion coefficient from the porous support to the interfacial layer thereby reducing thermal expansion stress as the catalyst is heated to high operating temperatures. The method of the present invention for making the at least three layer catalyst has the steps of (1) selecting a porous support, (2) solution depositing an interfacial layer thereon, and optionally (3) depositing a catalyst material onto the interfacial layer; wherein the improvement comprises (4) depositing a buffer layer between the porous support and the interfacial layer.

  20. Digitally programmable signal generator and method

    DOE Patents [OSTI]

    Priatko, G.J.; Kaskey, J.A.

    1989-11-14

    Disclosed is a digitally programmable waveform generator for generating completely arbitrary digital or analog waveforms from very low frequencies to frequencies in the gigasample per second range. A memory array with multiple parallel outputs is addressed; then the parallel output data is latched into buffer storage from which it is serially multiplexed out at a data rate many times faster than the access time of the memory array itself. While data is being multiplexed out serially, the memory array is accessed with the next required address and presents its data to the buffer storage before the serial multiplexing of the last group of data is completed, allowing this new data to then be latched into the buffer storage for smooth continuous serial data output. In a preferred implementation, a plurality of these serial data outputs are paralleled to form the input to a digital to analog converter, providing a programmable analog output. 6 figs.

  1. Digitally programmable signal generator and method

    DOE Patents [OSTI]

    Priatko, Gordon J.; Kaskey, Jeffrey A.

    1989-01-01

    A digitally programmable waveform generator for generating completely arbitrary digital or analog waveforms from very low frequencies to frequencies in the gigasample per second range. A memory array with multiple parallel outputs is addressed; then the parallel output data is latched into buffer storage from which it is serially multiplexed out at a data rate many times faster than the access time of the memory array itself. While data is being multiplexed out serially, the memory array is accessed with the next required address and presents its data to the buffer storage before the serial multiplexing of the last group of data is completed, allowing this new data to then be latched into the buffer storage for smooth continuous serial data output. In a preferred implementation, a plurality of these serial data outputs are paralleled to form the input to a digital to analog converter, providing a programmable analog output.

  2. Methods for improved growth of group III nitride semiconductor compounds

    DOE Patents [OSTI]

    Melnik, Yuriy; Chen, Lu; Kojiri, Hidehiro

    2015-03-17

    Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.

  3. Conductive layer for biaxially oriented semiconductor film growth

    DOE Patents [OSTI]

    Findikoglu, Alp T.; Matias, Vladimir

    2007-10-30

    A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

  4. Completion processing for data communications instructions

    DOE Patents [OSTI]

    Blocksome, Michael A.; Kumar, Sameer; Parker, Jeffrey J.

    2014-07-01

    Completion processing of data communications instructions in a distributed computing environment with computers coupled for data communications through communications adapters and an active messaging interface (`AMI`), injecting for data communications instructions into slots in an injection FIFO buffer a transfer descriptor, at least some of the instructions specifying callback functions; injecting a completion descriptor for each instruction that specifies a callback function into an injection FIFO buffer slot having a corresponding slot in a pending callback list; listing in the pending callback list callback functions specified by data communications instructions; processing each descriptor in the injection FIFO buffer, setting a bit in a completion bit mask corresponding to the slot in the FIFO where the completion descriptor was injected; and calling by the AMI any callback functions in the pending callback list as indicated by set bits in the completion bit mask.

  5. Chemical micro-sensor

    DOE Patents [OSTI]

    Ruggiero, Anthony J.

    2005-05-03

    An integrated optical capillary electrophoresis system for analyzing an analyte. A modulated optical pump beam impinges on an capillary containing the analyte/buffer solution which is separated by electrophoresis. The thermally-induced change in the index of refraction of light in said electrophoresis capillary is monitored using an integrated micro-interferometer. The interferometer includes a first interferometer arm intersecting the electrophoresis capillary proximate the excitation beam and a second, reference interferometer arm. Changes in index of refraction in the analyte measured by interrogating the interferometer state using white light interferometry and a phase-generated carrier demodulation technique. Background thermo-optical activity in the buffer solution is cancelled by splitting the pump beam and exciting pure buffer solution in a second section of capillary where it crosses the reference arm of the interferometer.

  6. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

    DOE Patents [OSTI]

    Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

    2005-02-01

    A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

  7. Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

    SciTech Connect (OSTI)

    Wu, Wei Cao, Yanyan; Caspar, Jonathan V.; Guo, Qijie; Johnson, Lynda K.; Mclean, Robert S.; Malajovich, Irina; Choudhury, Kaushik Roy

    2014-07-28

    We describe a CZTSSe (Cu{sub 2}ZnSn(S{sub 1−x},Se{sub x}){sub 4}) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO{sub 2}, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.

  8. Method to prevent/mitigate steam explosions in casting pits

    DOE Patents [OSTI]

    Taleyarkhan, R.P.

    1996-12-24

    Steam explosions can be prevented or mitigated during a metal casting process by the placement of a perforated flooring system in the casting pit. An upward flow of compressed gas through this perforated flooring system is introduced during the casting process to produce a buffer layer between any spilled molten metal and the cooling water in the reservoir. This buffer layer provides a hydrodynamic layer which acts to prevent or mitigate steam explosions resulting from hot, molten metal being spilled into or onto the cooling water. 3 figs.

  9. Method to prevent/mitigate steam explosions in casting pits

    DOE Patents [OSTI]

    Taleyarkhan, Rusi P.

    1996-01-01

    Steam explosions can be prevented or mitigated during a metal casting process by the placement of a perforated flooring system in the casting pit. An upward flow of compressed gas through this perforated flooring system is introduced during the casting process to produce a buffer layer between any spilled molten metal and the cooling water in the reservoir. This buffer layer provides a hydrodynamic layer which acts to prevent or mitigate steam explosions resulting from hot, molten metal being spilled into or onto the cooling water.

  10. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Switch to Detail View for this search SciTech Connect Search Results Page 1 of 1 Search for: All records Creators/Authors contains: "Beach, David" × Sort by Relevance Sort by Date (newest first) Sort by Date (oldest first) Sort by Relevance « Prev Next » Everything10 Electronic Full Text5 Citations5 Multimedia0 Datasets0 Software0 Filter Results Filter by Subject substrates (5) biaxially (3) buffer (3) buffer layer (3) depositing (3) deposition (3) disclosed (3) forming (3) layer

  11. Parallel pulse processing and data acquisition for high speed, low error flow cytometry

    DOE Patents [OSTI]

    Engh, G.J. van den; Stokdijk, W.

    1992-09-22

    A digitally synchronized parallel pulse processing and data acquisition system for a flow cytometer has multiple parallel input channels with independent pulse digitization and FIFO storage buffer. A trigger circuit controls the pulse digitization on all channels. After an event has been stored in each FIFO, a bus controller moves the oldest entry from each FIFO buffer onto a common data bus. The trigger circuit generates an ID number for each FIFO entry, which is checked by an error detection circuit. The system has high speed and low error rate. 17 figs.

  12. High-throughput method for optimum solubility screening for homogeneity and crystallization of proteins

    DOE Patents [OSTI]

    Kim, Sung-Hou; Kim, Rosalind; Jancarik, Jamila

    2012-01-31

    An optimum solubility screen in which a panel of buffers and many additives are provided in order to obtain the most homogeneous and monodisperse protein condition for protein crystallization. The present methods are useful for proteins that aggregate and cannot be concentrated prior to setting up crystallization screens. A high-throughput method using the hanging-drop method and vapor diffusion equilibrium and a panel of twenty-four buffers is further provided. Using the present methods, 14 poorly behaving proteins have been screened, resulting in 11 of the proteins having highly improved dynamic light scattering results allowing concentration of the proteins, and 9 were crystallized.

  13. Series interconnected photovoltaic cells and method for making same

    DOE Patents [OSTI]

    Albright, Scot P.; Chamberlin, Rhodes R.; Thompson, Roger A.

    1995-01-01

    A novel photovoltaic module (10) and method for constructing the same are disclosed. The module (10) includes a plurality of photovoltaic cells (12) formed on a substrate (14) and laterally separated by interconnection regions (15). Each cell (12) includes a bottom electrode (16), a photoactive layer (18) and a top electrode layer (20). Adjacent cells (12) are connected in electrical series by way of a conductive-buffer line (22). The buffer line (22) is also useful in protecting the bottom electrode (16) against severing during downstream layer cutting processes.

  14. Method for improving performance of high temperature superconductors within a magnetic field

    DOE Patents [OSTI]

    Wang, Haiyan; Foltyn, Stephen R.; Maiorov, Boris A.; Civale, Leonardo

    2010-01-05

    The present invention provides articles including a base substrate including a layer of an oriented cubic oxide material having a rock-salt-like structure layer thereon; and, a buffer layer upon the oriented cubic oxide material having a rock-salt-like structure layer, the buffer layer having an outwardly facing surface with a surface morphology including particulate outgrowths of from 10 nm to 500 run in size at the surface, such particulate outgrowths serving as flux pinning centers whereby the article maintains higher performance within magnetic fields than similar articles without the necessary density of such outgrowths.

  15. Preparation of DNA-containing extract for PCR amplification

    DOE Patents [OSTI]

    Dunbar, John M.; Kuske, Cheryl R.

    2006-07-11

    Environmental samples typically include impurities that interfere with PCR amplification and DNA quantitation. Samples of soil, river water, and aerosol were taken from the environment and added to an aqueous buffer (with or without detergent). Cells from the sample are lysed, releasing their DNA into the buffer. After removing insoluble cell components, the remaining soluble DNA-containing extract is treated with N-phenacylthiazolium bromide, which causes rapid precipitation of impurities. Centrifugation provides a supernatant that can be used or diluted for PCR amplification of DNA, or further purified. The method may provide a DNA-containing extract sufficiently pure for PCR amplification within 5–10 minutes.

  16. Aligned crystalline semiconducting film on a glass substrate and method of making

    DOE Patents [OSTI]

    Findikoglu, Alp T. (Los Alamos, NM)

    2010-08-24

    A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750.degree. C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam deposition, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.

  17. Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys

    DOE Patents [OSTI]

    Norman, Andrew G.; Olson, Jerry M.

    2007-06-12

    Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructure (18) product for various applications.

  18. Electrocatalytic cermet sensor

    DOE Patents [OSTI]

    Shoemaker, E.L.; Vogt, M.C.

    1998-06-30

    A sensor is described for O{sub 2} and CO{sub 2} gases. The gas sensor includes a plurality of layers driven by a cyclic voltage to generate a unique plot characteristic of the gas in contact with the sensor. The plurality of layers includes an alumina substrate, a reference electrode source of anions, a lower electrical reference electrode of Pt coupled to the reference source of anions, a solid electrolyte containing tungsten and coupled to the lower reference electrode, a buffer layer for preventing flow of Pt ions into the solid electrolyte and an upper catalytically active Pt electrode coupled to the buffer layer. 16 figs.

  19. Electrocatalytic cermet sensor

    DOE Patents [OSTI]

    Shoemaker, Erika L.; Vogt, Michael C.

    1998-01-01

    A sensor for O.sub.2 and CO.sub.2 gases. The gas sensor includes a plurality of layers driven by a cyclic voltage to generate a unique plot characteristic of the gas in contact with the sensor. The plurality of layers includes an alumina substrate, a reference electrode source of anions, a lower electrical reference electrode of Pt coupled to the reference source of anions, a solid electrolyte containing tungsten and coupled to the lower reference electrode, a buffer layer for preventing flow of Pt ions into the solid electrolyte and an upper catalytically active Pt electrode coupled to the buffer layer.

  20. Method for making high-critical-current-density YBa.sub.2 Cu.sub.3 O.sub.7 superconducting layers on metallic substrates

    DOE Patents [OSTI]

    Feenstra, Roeland (Knoxville, TN); Christen, David (Oak Ridge, TN); Paranthaman, Mariappan (Knoxville, TN)

    1999-01-01

    A method is disclosed for fabricating YBa.sub.2 Cu.sub.3 O.sub.7 superconductor layers with the capability of carrying large superconducting currents on a metallic tape (substrate) supplied with a biaxially textured oxide buffer layer. The method represents a simplification of previously established techniques and provides processing requirements compatible with scale-up to long wire (tape) lengths and high processing speeds. This simplification has been realized by employing the BaF.sub.2 method to grow a YBa.sub.2 Cu.sub.3 O.sub.7 film on a metallic substrate having a biaxially textured oxide buffer layer.

  1. Preparation of arrays of long carbon nanotubes using catalyst structure

    DOE Patents [OSTI]

    Zhu, Yuntian T.; Arendt, Paul; Li, Qingwen; Zhang, Xiefie

    2016-03-22

    A structure for preparing an substantially aligned array of carbon nanotubes include a substrate having a first side and a second side, a buffer layer on the first side of the substrate, a catalyst on the buffer layer, and a plurality of channels through the structure for allowing a gaseous carbon source to enter the substrate at the second side and flow through the structure to the catalyst. After preparing the array, a fiber of carbon nanotubes may be spun from the array. Prior to spinning, the array can be immersed in a polymer solution. After spinning, the polymer can be cured.

  2. Parallel pulse processing and data acquisition for high speed, low error flow cytometry

    DOE Patents [OSTI]

    van den Engh, Gerrit J.; Stokdijk, Willem

    1992-01-01

    A digitally synchronized parallel pulse processing and data acquisition system for a flow cytometer has multiple parallel input channels with independent pulse digitization and FIFO storage buffer. A trigger circuit controls the pulse digitization on all channels. After an event has been stored in each FIFO, a bus controller moves the oldest entry from each FIFO buffer onto a common data bus. The trigger circuit generates an ID number for each FIFO entry, which is checked by an error detection circuit. The system has high speed and low error rate.

  3. Nanosecond monolithic CMOS readout cell

    DOE Patents [OSTI]

    Souchkov, Vitali V.

    2004-08-24

    A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

  4. Apparatus and method for managing digital resources by passing digital resource tokens between queues

    DOE Patents [OSTI]

    Crawford, H.J.; Lindenstruth, V.

    1999-06-29

    A method of managing digital resources of a digital system includes the step of reserving token values for certain digital resources in the digital system. A selected token value in a free-buffer-queue is then matched to an incoming digital resource request. The selected token value is then moved to a valid-request-queue. The selected token is subsequently removed from the valid-request-queue to allow a digital agent in the digital system to process the incoming digital resource request associated with the selected token. Thereafter, the selected token is returned to the free-buffer-queue. 6 figs.

  5. Detecting and correcting hard errors in a memory array

    DOE Patents [OSTI]

    Kalamatianos, John; John, Johnsy Kanjirapallil; Gelinas, Robert; Sridharan, Vilas K.; Nevius, Phillip E.

    2015-11-19

    Hard errors in the memory array can be detected and corrected in real-time using reusable entries in an error status buffer. Data may be rewritten to a portion of a memory array and a register in response to a first error in data read from the portion of the memory array. The rewritten data may then be written from the register to an entry of an error status buffer in response to the rewritten data read from the register differing from the rewritten data read from the portion of the memory array.

  6. Apparatus and method for managing digital resources by passing digital resource tokens between queues

    DOE Patents [OSTI]

    Crawford, Henry J.; Lindenstruth, Volker

    1999-01-01

    A method of managing digital resources of a digital system includes the step of reserving token values for certain digital resources in the digital system. A selected token value in a free-buffer-queue is then matched to an incoming digital resource request. The selected token value is then moved to a valid-request-queue. The selected token is subsequently removed from the valid-request-queue to allow a digital agent in the digital system to process the incoming digital resource request associated with the selected token. Thereafter, the selected token is returned to the free-buffer-queue.

  7. Solid oxide fuel cell generator

    DOE Patents [OSTI]

    Draper, Robert; George, Raymond A.; Shockling, Larry A.

    1993-01-01

    A solid oxide fuel cell generator has a pair of spaced apart tubesheets in a housing. At least two intermediate barrier walls are between the tubesheets and define a generator chamber between two intermediate buffer chambers. An array of fuel cells have tubes with open ends engaging the tubesheets. Tubular, axially elongated electrochemical cells are supported on the tubes in the generator chamber. Fuel gas and oxidant gas are preheated in the intermediate chambers by the gases flowing on the other side of the tubes. Gas leakage around the tubes through the tubesheets is permitted. The buffer chambers reentrain the leaked fuel gas for reintroduction to the generator chamber.

  8. Solid oxide fuel cell generator

    DOE Patents [OSTI]

    Draper, R.; George, R.A.; Shockling, L.A.

    1993-04-06

    A solid oxide fuel cell generator has a pair of spaced apart tubesheets in a housing. At least two intermediate barrier walls are between the tubesheets and define a generator chamber between two intermediate buffer chambers. An array of fuel cells have tubes with open ends engaging the tubesheets. Tubular, axially elongated electrochemical cells are supported on the tubes in the generator chamber. Fuel gas and oxidant gas are preheated in the intermediate chambers by the gases flowing on the other side of the tubes. Gas leakage around the tubes through the tubesheets is permitted. The buffer chambers reentrain the leaked fuel gas for reintroduction to the generator chamber.

  9. COMPREHENSIVE RISK ASSESSMENT

    Office of Legacy Management (LM)

    KEY Upper Walnut Drainage Inter - Drainage West Area Wind Blown Area Rock Creek Drainage Industrial Area Upper Woman Drainage Southeast Buffer Zone Area Lower Woman Drainage Southwest Buffer Zone Area No Name Gulch Drainage Lower Walnut Drainage 2075000 2075000 2080000 2080000 2085000 2085000 2090000 2090000 2095000 2095000 745000 745000 750000 750000 755000 755000 0 1,500 3,000 Feet File: W:\Projects\FY2005\RIFS_Fig\Sec07\ArcMap\ Figure_7_1_EU.mxd U.S. Department of Energy Rocky Flats

  10. Preparation of DNA-containing extract for PCR amplification

    DOE Patents [OSTI]

    Dunbar, John M.; Kuske, Cheryl R.

    2006-07-11

    Environmental samples typically include impurities that interfere with PCR amplification and DNA quantitation. Samples of soil, river water, and aerosol were taken from the environment and added to an aqueous buffer (with or without detergent). Cells from the sample are lysed, releasing their DNA into the buffer. After removing insoluble cell components, the remaining soluble DNA-containing extract is treated with N-phenacylthiazolium bromide, which causes rapid precipitation of impurities. Centrifugation provides a supernatant that can be used or diluted for PCR amplification of DNA, or further purified. The method may provide a DNA-containing extract sufficiently pure for PCR amplification within 510 minutes.

  11. Debbie Bard, Wahid

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bard, Wahid Bhimji, Dave Paul, et. al. Cori Phase 1 Burst Buffer HPC memory hierarchy is changing Memory (DRAM) Storage (HDD) CPU CPU Far Memory (DRAM) Far Storage (HDD) Near Storage (SSD) Near Memory (HBM) Past Future On Chip On Chip Off Chip Off Chip HPC memory hierarchy is changing Memory (DRAM) Storage (HDD) CPU CPU Far Memory (DRAM) Far Storage (HDD) Near Storage (SSD) Near Memory (HBM) Past Future On Chip On Chip Off Chip Off Chip Why a Burst Buffer? * Handle spikes in IO bandwidth

  12. Transparent TiO2 nanotube array photoelectrodes prepared via two-step anodization

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, Jin Young; Zhu, Kai; Neale, Nathan R.; Frank, Arthur J.

    2014-04-04

    Two-step anodization of transparent TiO2 nanotube arrays has been demonstrated with aid of a Nb-doped TiO2 buffer layer deposited between the Ti layer and TCO substrate. Enhanced physical adhesion and electrochemical stability provided by the buffer layer has been found to be important for successful implementation of the two-step anodization process. As a result, with the proposed approach, the morphology and thickness of NT arrays could be controlled very precisely, which in turn, influenced their optical and photoelectrochemical properties.

  13. Overview of the Performance of PIT-Tag Interrogation Systems for Adult Salmonids at Bonneville and McNary Dams, 2002.

    SciTech Connect (OSTI)

    Downing, Sandra L.; Prentice, Earl F.

    2003-06-01

    During winter 2001, the U.S. Army Corps of Engineers (Corps) and Bonneville Power Administration (BPA) installed a prototype orifice-based PIT-tag interrogation system into the Washington Shore Ladder at Bonneville Dam (BWSL). Detectors were installed into 12 weirs: 4 downstream (Weirs 334-337) and 8 upstream (Weirs 352-359) from the fish release point (i.e., the exit ladder for the Adult Fish Facility). NOAA Fisheries (National Marine Fisheries Service--NMFS) tagged and released salmonids during 2001 to determine tag-reading efficiencies for different salmonid populations. Data analyses focused on the upper eight weirs. The 2001 tagging results for spring chinook salmon indicated that having detectors in four consecutive weirs would have been sufficient to yield a reading efficiency of 95%. The BWSL orifice-based system performed well until the coho and fall chinook salmon migrations began. Coho and fall chinook salmon appeared to use the weir overflows, and thus avoid detection, at much higher rates than biologists expected. During 2001, technology advances led to the development of significantly larger antennas than had been available earlier, and thus it was possible to build antennas of approximately 2 x 6 ft. Consequently, it became feasible to design interrogation systems for ladder locations where all fish would have to go through the antennas and thus could not avoid detection by using the weir overflows (Fig. 1). Destron Technologies by Digital Angel designed a prototype interrogation system with two antennas that was installed into the counting-window area in the Oregon Ladder at McNary Dam, where its performance could then be directly compared to that of the orifice-based system in the same ladder. Although the orifice-based systems appeared less effective than the fisheries community wanted for fall chinook and coho salmon, the decision was made to proceed with installations planned for Bonneville and McNary Dams because valuable data would still be collected. During the winter of 2002, the Corps and BPA installed PIT-tag interrogation systems into the Bradford Island and Cascades Island Fish Ladders at Bonneville Dam and into the Washington and Oregon Ladders at McNary Dam. Like BWSL in 2001, these ladders had eight weirs (16 orifices) outfitted with fiberglass antennas. Douglas County Public Utility District also installed an orifice-based system into its ladders at Wells Dam, but they were able to use weirs with no overflow sections wherein all fish had to swim through the orifice antennas. Thus, 2002 was the first year that the fisheries community had PIT-tag detection of adult salmonids at Bonneville, McNary, Wells, and Lower Granite Dams (Fig. 2). This overview will provide information on how well the systems at Bonneville and McNary Dams performed.

  14. High resolution InSb quantum well ballistic nanosensors for room temperature applications

    SciTech Connect (OSTI)

    Gilbertson, Adam; Cohen, L. F.; Lambert, C. J.; Solin, S. A.

    2013-12-04

    We report the room temperature operation of a quasi-ballistic InSb quantum well Hall sensor that exhibits a high frequency sensitivity of 560nT/?Hz at 20uA bias current. The device utilizes a partitioned buffer layer design that suppresses leakage currents through the mesa floor and can sustain large current densities.

  15. ELECTRODEPOSITION OF PLUTONIUM

    DOE Patents [OSTI]

    Wolter, F.J.

    1957-09-10

    A process of electrolytically recovering plutonium from dilute aqueous solutions containing plutonium ions comprises electrolyzing the solution at a current density of about 0.44 ampere per square centimeter in the presence of an acetate-sulfate buffer while maintaining the pH of the solution at substantially 5 and using a stirred mercury cathode.

  16. Method to adjust multilayer film stress induced deformation of optics

    DOE Patents [OSTI]

    Mirkarimi, Paul B.; Montcalm, Claude

    2000-01-01

    A buffer-layer located between a substrate and a multilayer for counteracting stress in the multilayer. Depositing a buffer-layer having a stress of sufficient magnitude and opposite in sign reduces or cancels out deformation in the substrate due to the stress in the multilayer. By providing a buffer-layer between the substrate and the multilayer, a tunable, near-zero net stress results, and hence results in little or no deformation of the substrate, such as an optic for an extreme ultraviolet (EUV) lithography tool. Buffer-layers have been deposited, for example, between Mo/Si and Mo/Be multilayer films and their associated substrate reducing significantly the stress, wherein the magnitude of the stress is less than 100 MPa and respectively near-normal incidence (5.degree.) reflectance of over 60% is obtained at 13.4 nm and 11.4 nm. The present invention is applicable to crystalline and non-crystalline materials, and can be used at ambient temperatures.

  17. News Item

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Non-invasive Nano-scale Imaging CLAIRE imaging chip consists of a YAlO3:Ce scintillator film supported by LaAlO3 and SrTiO3 buffer layers and a Si frame. Al nanostructures embedded...

  18. Fluidic assembly for an ultra-high-speed chromosome flow sorter

    DOE Patents [OSTI]

    Gray, Joe W.; Alger, Terry W.; Lord, David E.

    1982-01-01

    A fluidic assembly for an ultra-high-speed chromosome flow sorter using a fluid drive system, a nozzle with an orifice having a small ratio of length to diameter, and mechanism for vibrating the nozzle along its axis at high frequencies. The orifice is provided with a sharp edge at its inlet, and a conical section at its outlet for a transition from a short cylindrical aperture of small length to diameter ratio to free space. Sample and sheath fluids in separate low pressure reservoirs are transferred into separate high pressure buffer reservoirs through a valve arrangement which first permit the fluids to be loaded into the buffer reservoirs under low pressure. Once loaded, the buffer reservoirs are subjected to high pressure and valves are operated to permit the buffer reservoirs to be emptied through the nozzle under high pressure. A sensor and decision logic is positioned at the exit of the nozzle, and a charging pulse is applied to the jet when a particle reaches a position further downstream where the droplets are formed. In order to adjust the timing of charge pulses, the distance between the sensing station at the outlet of the nozzle and the droplet breakoff point is determined by stroboscopic illumination of the droplet breakoff region using a laser and a revolving lucite cylinder, and a beam on/off modulator. The breakoff point in the region thus illuminated may then be viewed, using a television monitor.

  19. Catalyst, Method Of Making, And Reactions Using The Catalyst

    DOE Patents [OSTI]

    Tonkovich, Anna Lee Y.; Wang, Yong; Gao, Yufei

    2004-07-13

    The present invention includes a catalyst having a layered structure with, (1) a porous support, (2) a buffer layer, (3) an interfacial layer, and optionally (4) a catalyst layer. The invention also provides a process in which a reactant is converted to a product by passing through a reaction chamber containing the catalyst.

  20. Catalyst, method of making, and reactions using the catalyst

    DOE Patents [OSTI]

    Tonkovich, Anna Lee Y [Pasco, WA; Wang, Yong [Richland, WA; Gao, Yufei [Kennewick, WA

    2009-03-03

    The present invention includes a catalyst having a layered structure with, (1) a porous support, (2) a buffer layer, (3) an interfacial layer, and optionally (4) a catalyst layer. The invention also provides a process in which a reactant is converted to a product by passing through a reaction chamber containing the catalyst.

  1. Catalyst, method of making, and reactions using the catalyst

    DOE Patents [OSTI]

    Tonkovich, Anna Lee Y [Pasco, WA; Wang, Yong [Richland, WA; Gao, Yufei [Kennewick, WA

    2002-08-27

    The present invention includes a catalyst having a layered structure with, (1) a porous support, (2) a buffer layer, (3) an interfacial layer, and optionally (4) a catalyst layer. The invention also provides a process in which a reactant is converted to a product by passing through a reaction chamber containing the catalyst.

  2. Acoustic transducer for acoustic microscopy

    DOE Patents [OSTI]

    Khuri-Yakub, B.T.; Chou, C.H.

    1990-03-20

    A shear acoustic transducer-lens system is described in which a shear polarized piezoelectric material excites shear polarized waves at one end of a buffer rod having a lens at the other end which excites longitudinal waves in a coupling medium by mode conversion at selected locations on the lens. 9 figs.

  3. Acoustic transducer for acoustic microscopy

    DOE Patents [OSTI]

    Khuri-Yakub, Butrus T.; Chou, Ching H.

    1990-01-01

    A shear acoustic transducer-lens system in which a shear polarized piezoelectric material excites shear polarized waves at one end of a buffer rod having a lens at the other end which excites longitudinal waves in a coupling medium by mode conversion at selected locations on the lens.

  4. Process for preparing metal-carbide-containing microspheres from metal-loaded resin beads

    DOE Patents [OSTI]

    Beatty, Ronald L.

    1977-01-01

    An improved process for producing porous spheroidal particles consisting of a metal carbide phase dispersed within a carbon matrix is described. According to the invention metal-loaded ion-exchange resin microspheres which have been carbonized are coated with a buffer carbon layer prior to conversion of the oxide to carbide in order to maintain porosity and avoid other adverse sintering effects.

  5. Laser vaporization/ionization interface for coupling microscale separation techniques with mass spectrometry

    DOE Patents [OSTI]

    Yeung, E.S.; Chang, Y.C.

    1999-06-29

    The present invention provides a laser-induced vaporization and ionization interface for directly coupling microscale separation processes to a mass spectrometer. Vaporization and ionization of the separated analytes are facilitated by the addition of a light-absorbing component to the separation buffer or solvent. 8 figs.

  6. High Tc YBCO superconductor deposited on biaxially textured Ni substrate

    DOE Patents [OSTI]

    Budai, John D.; Christen, David K.; Goyal, Amit; He, Qing; Kroeger, Donald M.; Lee, Dominic F.; List, III, Frederick A.; Norton, David P.; Paranthaman, Mariappan; Sales, Brian C.; Specht, Eliot D.

    1999-01-01

    A superconducting article includes a biaxially-textured Ni substrate, and epitaxial buffer layers of Pd (optional), CeO.sub.2 and YSZ, and a top layer of in-plane aligned, c-axis oriented YBCO having a critical current density (J.sub.c) in the range of at least 100,000 A/cm.sup.2 at 77 K.

  7. Richland C

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    March 1 to July 31 Protected February 15 to July 31 Protected November 15 to March 15 Protected November 15 to July 31 Hanford Site Boundary Industrial Areas / 0 2 4 6 8 10 Miles 0 5 10 15 20 Kilometers Natural Resource Protective Buffer Zones (Version 02-23-16)

  8. Laser vaporization/ionization interface for coupling microscale separation techniques with mass spectrometry

    DOE Patents [OSTI]

    Yeung, Edward S.; Chang, Yu-chen

    1999-06-29

    The present invention provides a laser-induced vaporization and ionization interface for directly coupling microscale separation processes to a mass spectrometer. Vaporization and ionization of the separated analytes are facilitated by the addition of a light-absorbing component to the separation buffer or solvent.

  9. Sulfuric acid thermoelectrochemical system and method

    DOE Patents [OSTI]

    Ludwig, Frank A.

    1989-01-01

    A thermoelectrochemical system in which an electrical current is generated between a cathode immersed in a concentrated sulfuric acid solution and an anode immersed in an aqueous buffer solution of sodium bisulfate and sodium sulfate. Reactants consumed at the electrodes during the electrochemical reaction are thermochemically regenerated and recycled to the electrodes to provide continuous operation of the system.

  10. Method and system for polishing materials using a nonaqueous magnetorheological fluid

    DOE Patents [OSTI]

    Menapace, Joseph Arthur; Ehrmann, Paul Richard

    2014-09-09

    A nonaqueous magnetorheological fluid includes a primarily organic carrier liquid and magnetizable particles. The magnetorheological fluid also includes a buffer, a stabilizer, and water. A pH of the magnetorheological fluid is between 6.5 and 9.0.

  11. Important Trinity / NERSC-8 Documents

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    RFP » Important Trinity / NERSC-8 Documents Important Trinity / NERSC-8 Documents Trinity / NERSC-8 Use Case Scenarios for Burst Buffer and Power Management [PDF] Facility Limits for Trinity (Updated June 4, 2013) [PDF] Last edited: 2016-04-29 11:35:13

  12. T-633: BIND RRSIG RRsets Negative Caching Off-by-one Bug Lets Remote Users Deny Service

    Broader source: Energy.gov [DOE]

    A remote DNS server can supply very large RRSIG RRsets in a negative response to trigger an off-by-one error in a buffer size check and cause the target requesting named process to crash. A remote user can cause named to crash.

  13. AUTOmatic Message PACKing Facility

    Energy Science and Technology Software Center (OSTI)

    2004-07-01

    AUTOPACK is a library that provides several useful features for programs using the Message Passing Interface (MPI). Features included are: 1. automatic message packing facility 2. management of send and receive requests. 3. management of message buffer memory. 4. determination of the number of anticipated messages from a set of arbitrary sends, and 5. deterministic message delivery for testing purposes.

  14. Convertor of MAD Programs to a Set of ASCII files to load into SYBASE

    Energy Science and Technology Software Center (OSTI)

    1995-07-12

    Used in Lattice support and maintenance; current buffer in Emacs editor is converted into a bunch of ASCII files (each for specific MAD token type). These files are in some fixed format and are ready to be loaded into the database (sysbase).

  15. Ceramographic Examinations of Irradiated AGR-1 Fuel Compacts

    SciTech Connect (OSTI)

    Paul Demkowicz; Scott Ploger; John Hunn; Jay S. Kehn

    2012-09-01

    The AGR 1 experiment involved irradiating 72 cylindrical fuel compacts containing tri-structural isotropic (TRISO)-coated particles to a peak burnup of 19.5% fissions per initial metal atom with no in-pile failures observed out of almost 300,000 particles. Six irradiated AGR 1 fuel compacts were selected for microscopy that span a range of irradiation conditions (temperature, burnup, and fast fluence). These six compacts also included all four TRISO coating variations irradiated in the AGR experiment. The six compacts were cross-sectioned both transversely and longitudinally, mounted, ground, and polished after development of careful techniques for preserving particle structures against preparation damage. From 36 to 79 particles within each cross section were exposed near enough to midplane for optical microscopy of kernel, buffer, and coating behavior. The microstructural analysis focused on kernel swelling and porosity, buffer densification and fracture, debonding between the buffer and inner pyrolytic carbon (IPyC) layers, and fractures in the IPyC and SiC layers. Three basic particle morphologies were established according to the extent of bonding between the buffer and IPyC layers: complete debonding along the interface (Type A), no debonding along the interface (Type B), and partial debonding (Type AB). These basic morphologies were subdivided according to whether the buffer stayed intact or fractured. The resulting six characteristic morphologies were used to classify particles within each cross section, but no spatial patterns were clearly observed in any of the cross-sectional morphology maps. Although positions of particle types appeared random within compacts, examining a total of 931 classified particles allowed other relationships among morphological types to be established.

  16. KIVA-3V, Release 2: Improvements to KIVA-3V

    SciTech Connect (OSTI)

    Anthony A. Amsden

    1999-05-01

    This report describes the changes made in the KIVA-3V computer program since its initial release version dated 24 March 1997. A variety of new features enhance the robustness, efficiency, and usefulness of the overall program for engine modeling. Among these are an automatic restart of the cycle with a reduced timestep in case of iteration limit or temperature overflow, which should greatly reduce the likelihood of having the code crash in mid run. A new option is the automatic deactivation of a port region when it is closed off from the engine cylinder and its reactivation when it again communicates with the cylinder. A number of corrections throughout the code improve accuracy, one of which also corrects the 2-D planar option to make it properly independent of the third dimension. Extensions to the particle-based liquid wall film model make the model somewhat more complete, although it is still considered a work-in-progress. In response to current research in fuel-injected engines, a split-injection option has been added. A new subroutine monitors the whereabouts of the liquid and gaseous phases of the fuel, and for combustion runs the energy balance data and emissions are monitored and printed. New features in the grid generator K3PREP and the graphics post-processor K3POST are also discussed.

  17. Fish elevator and method of elevating fish

    DOE Patents [OSTI]

    Truebe, Jonathan; Drooker, Michael S.

    1984-01-01

    A means and method for transporting fish from a lower body of water to a higher body of water. The means comprises a tubular lock with a gated entrance below the level of the lower body of water through which fish may enter the lock and a discharge passage above the level of the upper body of water. The fish raising means in the lock is a crowder pulled upward by a surface float as water from the upper body of water gravitationally flows into the closed lock filling it to the level of the upper body. Water is then pumped into the lock to raise the level to the discharge passage. The crowder is then caused to float upward the remaining distance through the water to the level of the discharge passage by the introduction of air into a pocket on the underside of the crowder. The fish are then automatically discharged from the lock into the discharge passage by the out of water position of the crowder. The movement of the fish into the discharge passage is aided by the continuous overflow of water still being pumped into the lock. A pipe may be connected to the discharge passage to deliver the fish to a selected location in the upper body of water.

  18. Liquid-phase chromatography detector

    DOE Patents [OSTI]

    Voigtman, Edward G.; Winefordner, James D.; Jurgensen, Arthur R.

    1983-01-01

    A liquid-phase chromatography detector comprising a flow cell having an inlet tubular conduit for receiving a liquid chromatographic effluent and discharging it as a flowing columnar stream onto a vertically adjustable receiving surface spaced apart from and located vertically below and in close proximity to the discharge end of the tubular conduit; a receiver adapted to receive liquid overflowing from the receiving surface; an exit conduit for continuously removing liquid from the receiver; a light source for focussing fluorescence-producing light pulses on the flowing columnar stream as it passes from the outlet of the conduit to the receiving surface and a fluorescence detector to detect the produced fluorescence; a source of light pulse for producing acoustic waves in the columnar stream as it passes from the conduit outlet to the receiving surface; and a piezoelectric transducer adapted to detect those waves; and a source of bias voltage applied to the inlet tubular conduit and adapted to produce ionization of the liquid flowing through the flow cell so as to produce photocurrents therein and an electrical system to detect and record the photocurrents. This system is useful in separating and detecting individual chemical compounds from mixtures thereof.

  19. Liquid-phase chromatography detector

    DOE Patents [OSTI]

    Voigtman, E.G.; Winefordner, J.D.; Jurgensen, A.R.

    1983-11-08

    A liquid-phase chromatography detector comprises a flow cell having an inlet tubular conduit for receiving a liquid chromatographic effluent and discharging it as a flowing columnar stream onto a vertically adjustable receiving surface spaced apart from and located vertically below and in close proximity to the discharge end of the tubular conduit; a receiver adapted to receive liquid overflowing from the receiving surface; an exit conduit for continuously removing liquid from the receiver; a light source for focusing fluorescence-producing light pulses on the flowing columnar stream as it passes from the outlet of the conduit to the receiving surface and a fluorescence detector to detect the produced fluorescence; a source of light pulse for producing acoustic waves in the columnar stream as it passes from the conduit outlet to the receiving surface; and a piezoelectric transducer adapted to detect those waves; and a source of bias voltage applied to the inlet tubular conduit and adapted to produce ionization of the liquid flowing through the flow cell so as to produce photocurrents therein and an electrical system to detect and record the photocurrents. This system is useful in separating and detecting individual chemical compounds from mixtures thereof. 5 figs.

  20. Nova-like cataclysmic variables in the infrared

    SciTech Connect (OSTI)

    Hoard, D. W.; Long, Knox S.; Howell, Steve B.; Wachter, Stefanie; Brinkworth, Carolyn S.; Knigge, Christian; Drew, J. E.; Szkody, Paula; Kafka, S.; Belle, Kunegunda; Ciardi, David R.; Froning, Cynthia S.; Van Belle, Gerard T.; Pretorius, M. L.

    2014-05-01

    Nova-like (NL) cataclysmic variables have persistently high mass transfer rates and prominent steady state accretion disks. We present an analysis of infrared observations of 12 NLs obtained from the Two Micron All Sky Survey, the Spitzer Space Telescope, and the Wide-field Infrared Survey Explorer All Sky Survey. The presence of an infrared excess at ? ? 3-5 ?m over the expectation of a theoretical steady state accretion disk is ubiquitous in our sample. The strength of the infrared excess is not correlated with orbital period, but shows a statistically significant correlation (but shallow trend) with system inclination that might be partially (but not completely) linked to the increasing view of the cooler outer accretion disk and disk rim at higher inclinations. We discuss the possible origin of the infrared excess in terms of emission from bremsstrahlung or circumbinary dust, with either mechanism facilitated by the mass outflows (e.g., disk wind/corona, accretion stream overflow, and so on) present in NLs. Our comparison of the relative advantages and disadvantages of either mechanism for explaining the observations suggests that the situation is rather ambiguous, largely circumstantial, and in need of stricter observational constraints.

  1. The signature of single-degenerate accretion-induced collapse

    SciTech Connect (OSTI)

    Piro, Anthony L.

    2014-10-10

    The accretion-induced collapse (AIC) of a white dwarf to a neutron star has long been suggested as a natural theoretical outcome in stellar evolution, but there has never been a direct detection of such an event. This is not surprising since the small amount of radioactive nickel synthesized (?10{sup 3} M {sub ?}) implies a relatively dim optical transient. Here we argue that a particularly strong signature of an AIC would occur for an oxygen-neon-magnesium (ONeMg) white dwarf accreting from a star that is experiencing Roche-lobe overflow as it becomes a red giant. In such cases, the ?10{sup 50} erg explosion from the AIC collides with and shock-heats the surface of the extended companion, creating an X-ray flash lasting ?1 hr followed by an optical signature that peaks at an absolute magnitude of ? 16 to 18 and lasts for a few days to a week. These events would be especially striking in old stellar environments where hydrogen-rich supernova-like transients would not normally be expected. Although the rate of such events is not currently known, we describe observing strategies that could be utilized with high cadence surveys that should either detect these events or place strong constraints on their rates.

  2. Simple visualization techniques for die casting part and die design. Final report, July 1, 1995--September 30, 1997

    SciTech Connect (OSTI)

    Miller, R.A.; Lu, S.C.; Rebello, A.B.

    1998-05-01

    The objective of this work was to develop and test die casting design evaluation techniques based on the visualization of geometric data that is related to potential defects of problems. Specifically, thickness information is used to provide insight into potential thermal problems in the part and die. Distance from the gate and a special type of animation of the fill pattern is used to provide an assessment of gate, vent and overflow locations. Techniques have been developed to convert part design information in the form of STL files to a volume-based representation called a voxel model. The use of STL files makes the process CAD system independent. Once in voxel form, methods that were developed in this work are used to identify thick regions in the part, thin regions in the part and/or die, distance from user specified entry locations (gates), and the qualitative depiction of the fill pattern. The methods were tested with a prototype implementation on the UNIX platform. The results of comparisons with numerical simulation and field reported defects were surprisingly good. The fill-related methods were also compared against short-shots and a water analog study using high speed video. The report contains the results of the testing plus detailed background material on the construction of voxel models, the methods used for displaying results, and the computational geometric reasoning methods used to create die casting-related information form the voxel model for display to the user.

  3. Simple visualization techniques for die casting part and die design. Final report, July 1, 1995--September 30, 1997

    SciTech Connect (OSTI)

    Miller, R.A.; Lu, S.C.; Rebello, A.B.

    1998-05-01

    The objective of this work was to develop and test die casting design evaluation techniques based on the visualization of geometric data that is related to potential defects of problems. Specifically, thickness information is used to provide insight into potential thermal problems in the part and die. Distance from the gate and a special type of animation of the fill pattern is used to provide an assessment of gate, vent and overflow locations. Techniques have been developed to convert part design information in the form of STL files to a volume-based representation called a voxel model. The use of STL files makes the process CAD system independent. Once in voxel form, methods that were developed in this work are used to identify thick regions in the part, thin regions in the part and/or die, distance from user specified entry locations (gates), and the qualitative depiction of the fill pattern. The methods were tested with a prototype implementation on the UNIX platform. The results of comparisons with numerical simulation and field reported defects were surprisingly good. The fill-related methods were also compared against short-shots and a water analog study using high speed video. The report contains the results of the testing plus detailed background material on the construction of voxel models, the methods used for displaying results, and the computational geometric reasoning methods used to create die casting-related information from the voxel model for display to the user.

  4. Government works with technology to boost gas output/usage

    SciTech Connect (OSTI)

    Nicoll, H.

    1996-10-01

    Specially treated ethane gas from fields of the Moomba area in the Cooper basin of South Australia now flows freely through 870 mi of interstate gas pipeline to an end-user in Sydney, New South Wales. This unprecedented usage of ethane is the result of a long-term cooperative agreement. The producer sought to provide the end-user with ethane gas for usage as a petrochemical feedstock to manufacture ethylene and plastic goods. The end-user had strict specifications for a low-CO{sub 2}, very dry ethane product with a small percentage of methane. In order to meet these, the producer committed millions of dollars to construct a high-technology, state-of-the-art ethane treatment facility in the Moomba area, and lay an extensive pipeline. Santos also contracted with the amines supplier to provide a high-performance, deep CO{sub 2} removal solvent with good corrosion prevention characteristics. The paper discusses the Moomba field overflow, gas treatment, government cooperation, and project completion.

  5. Oakland Ravine Stormwater Treatment System Project, Borough of Queens, NYC

    SciTech Connect (OSTI)

    Dinkle, R.E.; Moutal, H.P.; Evans, T.M.; Kloman, L.

    1999-07-01

    Compared to other cities, New York City (NYC) is abundantly endowed with parklands and open spaces, many of which can be utilized to treat and dissipate stormwater runoff flows, in conjunction with the preservation, restoration and creation of ecological systems. Such use of available parklands and open spaces has the benefit of decreasing cost for stormwater treatment and conveyance, while at the same time enhancing the natural biological systems. Through the combined efforts of the NYC Department of Environmental Protection (NYCDEP), which is responsible for stormwater control, and the NYC Department of Parks and Recreation (NYCDPR), which is responsible for preserving and restoring the ecological systems of parklands and open spaces, URS Greiner Woodward Clyde (URSGWC) developed a project to provide for the treatment of stormwater and the attenuation of peak stormwater flows through restoration and creation of wetlands within Oakland Ravine (located in the densely populated northeastern section of the Borough of Queens, NYC). The proposed Oakland Ravine Stormwater Treatment System Project was developed in conjunction with the East River Combined Sewer Overflow (CSO) Abatement Project, which is part of the NYC comprehensive program to reduce CSO discharges into receiving waters. Discharges into Alley Creek through Outfall TI-7, an outfall located about one-half mile northeast of the ravine which has been designated for CSO abatement, will be reduced as a result of the project.

  6. Hydrology of the Melton Valley radioactive-waste burial grounds at Oak Ridge National Laboratory, Tennessee

    SciTech Connect (OSTI)

    Webster, D.A.; Bradley, M.W.

    1988-12-31

    Burial grounds 4, 5, and 6 were used sequentially from 1951 to the present for the disposal of solid, low-level radioactive waste by burial in shallow trenches and auger holes. Abundant rainfall, a generally thin unsaturated zone, geologic media of inherently low permeability, and the operational practices employed have contributed to partial saturation of the buried waste, leaching of radionuclides, and transport of dissolved matter from the burial areas. Two primary methods of transport from these sites are by dissolution in circulating ground water, and the overflow of fluids in trenches and subsequent flow across land surface. The waste-disposal areas are underlain by the Conasauga Group (Cambrian age), a complex sequence of mudstone, siltstone, and limestone interbeds grading from one lithotype to the other, both laterally and vertically. Compressional forces that caused regional thrust faulting also caused much internal deformation of the beds. Folds, bedding-plane faults, and joints are widespread. Small solution openings have developed in some areas where the structurally-related openings have provided ingress to ground water.

  7. Contamination source review for Building E3163, Edgewood Area, Aberdeen Proving Ground, Maryland

    SciTech Connect (OSTI)

    Draugelis, A.K.; Muir-Ploense, K.L.; Glennon, M.A.; Zimmerman, R.E.

    1995-09-01

    This report was prepared by Argonne National Laboratory (ANL) to document the results of a contamination source review for Building E3163 at the Aberdeen Proving Ground (APG) in Maryland. This report may be used to assist the US Army in planning for the future use or disposition of this building. The review included a historical records search, physical inspection, photographic documentation, and geophysical investigation. The field investigations were performed by ANL during 1994 and 1995. Building E3163 (APG designation) is part of the Medical Research Laboratories E3160 Complex. This research laboratory complex is located west of Kings Creek, east of the airfield and Ricketts Point Road, and south of Kings Creek Road in the Edgewood Area of APG. The original structures in the E3160 Complex were constructed during World War II. The complex was originally used as a medical research laboratory. Much of the research involved wound assessment. Building E3163, constructed in 1946, was used for toxicological studies on animals until 1965. All agent testing was done using laboratory-scale quantities of agents. All operational data were destroyed; total quantities and types of agents used during the testing are unknown. No experimentation has been conducted in the building since 1965. However, the building was used as overflow office space until the late 1980s. Since that time, the building has been unoccupied.

  8. Low-temperature hermetic sealing of optical fiber components

    DOE Patents [OSTI]

    Kramer, Daniel P. (Centerville, OH)

    1996-10-22

    A method for manufacturing low-temperature hermetically sealed optical fi components is provided. The method comprises the steps of: inserting an optical fiber into a housing, the optical fiber having a glass core, a glass cladding and a protective buffer layer disposed around the core and cladding; heating the housing to a predetermined temperature, the predetermined temperature being below a melting point for the protective buffer layer and above a melting point of a solder; placing the solder in communication with the heated housing to allow the solder to form an eutectic and thereby fill a gap between the interior of the housing and the optical fiber; and cooling the housing to allow the solder to form a hermetic compression seal between the housing and the optical fiber.

  9. Low-temperature hermetic sealing of optical fiber components

    DOE Patents [OSTI]

    Kramer, D.P.

    1996-10-22

    A method for manufacturing low-temperature hermetically sealed optical fiber components is provided. The method comprises the steps of: inserting an optical fiber into a housing, the optical fiber having a glass core, a glass cladding and a protective buffer layer disposed around the core and cladding; heating the housing to a predetermined temperature, the predetermined temperature being below a melting point for the protective buffer layer and above a melting point of a solder; placing the solder in communication with the heated housing to allow the solder to form an eutectic and thereby fill a gap between the interior of the housing and the optical fiber; and cooling the housing to allow the solder to form a hermetic compression seal between the housing and the optical fiber. 5 figs.

  10. Low-temperature hermetic sealing of optical fiber components

    SciTech Connect (OSTI)

    Kramer, D.P.

    1995-12-31

    A method for manufacturing low-temperature hermetically sealed optical fiber components is provided. The method comprises the steps of: inserting an optical fiber into a housing, the optical fiber having a glass core, a glass cladding and a protective buffer layer disposed around the core and cladding; heating the housing to a predetermined temperature, the predetermined temperature being below a melting point for the protective buffer layer and above a melting point of a solder; placing the solder in communication with the heated housing to allow the solder to form an eutectic and thereby fill a gap between the interior of the housing and the optical fiber; and cooling the housing to allow the solder to form a hermetic compression seal between the housing and the optical fiber.

  11. The effects of ionophores and metabolic inhibitors on methanogenesis and energy-related properties of Methanobacterium bryantii

    SciTech Connect (OSTI)

    Jarrell, K.F.; Sprott, G.D.

    1983-08-01

    The effects of numerous ionophores and inhibitors were tested on methane synthesis, intracellular ATP and potassium concentrations, and the proton motive force of the methanogenic archaebacterium Methanobacterium bryantii. M. bryantii had an internal pH near 6.8 (and hence little delta pH during growth) with an electrical potential of --127 mV in growth medium and --105 mV in a pH 6.5 buffer. The study has identified agents which, in M. bryantii, can effectively cause a decline of intracellular ATP (gramicidin, acetylene) and potassium concentrations (gramicidin, nigericin), inhibit methane synthesis (acetylene, gramicidin, nigericin, triphenylmethylphosphonium bromide), eliminate the electrical potential (high extracellular potassium ion concentrations), and dissipate artificially imposed, inside alkaline, pH gradients (monensin, nigericin, carbonyl cyanide m-chlorophenylhydrazone). Carbonyl cyanide m-chlorophenylhydrazone was generally ineffective in media or buffers reduced with cysteine-sulfide but could be effective in cysteine-free solutions reduced with hydrogen sulfide.

  12. Method of Fabrication of High Power Density Solid Oxide Fuel Cells

    DOE Patents [OSTI]

    Pham, Ai Quoc; Glass, Robert S.

    2008-09-09

    A method for producing ultra-high power density solid oxide fuel cells (SOFCs). The method involves the formation of a multilayer structure cells wherein a buffer layer of doped-ceria is deposited intermediate a zirconia electrolyte and a cobalt iron based electrode using a colloidal spray deposition (CSD) technique. For example, a cobalt iron based cathode composed of (La,Sr)(Co,Fe)O(LSCF) may be deposited on a zirconia electrolyte via a buffer layer of doped-ceria deposited by the CSD technique. The thus formed SOFC have a power density of 1400 mW/cm.sup.2 at 600.degree. C. and 900 mW/cm.sup.2 at 700.degree. C. which constitutes a 2-3 times increased in power density over conventionally produced SOFCs.

  13. High power density solid oxide fuel cells

    DOE Patents [OSTI]

    Pham, Ai Quoc; Glass, Robert S.

    2004-10-12

    A method for producing ultra-high power density solid oxide fuel cells (SOFCs). The method involves the formation of a multilayer structure cells wherein a buffer layer of doped-ceria is deposited intermediate a zirconia electrolyte and a cobalt iron based electrode using a colloidal spray deposition (CSD) technique. For example, a cobalt iron based cathode composed of (La,Sr)(Co,Fe)O (LSCF) may be deposited on a zirconia electrolyte via a buffer layer of doped-ceria deposited by the CSD technique. The thus formed SOFC have a power density of 1400 mW/cm.sup.2 at 600.degree. C. and 900 mW/cm.sup.2 at 700.degree. C. which constitutes a 2-3 times increased in power density over conventionally produced SOFCs.

  14. Mechanism of lateral ordering of InP dots grown on InGaP layers

    SciTech Connect (OSTI)

    Bortoleto, J.R.R.; Gutierrez, H.R.; Cotta, M.A.; Bettini, J.

    2005-07-04

    The mechanisms leading to the spontaneous formation of a two-dimensional array of InP/InGaP dots grown by chemical-beam epitaxy are discussed. Samples where the InGaP buffer layer was grown at different conditions were characterized by transmission electron microscopy. Our results indicate that a periodic strain field related to lateral two-dimensional compositional modulation in the InGaP buffer layer determines the dot nucleation positions during InP growth. Although the periodic strain field in the InGaP is large enough to align the InP dots, both their shape and optical properties are effectively unaltered. This result shows that compositional modulation can be used as a tool for in situ dot positioning.

  15. Back contact to film silicon on metal for photovoltaic cells

    DOE Patents [OSTI]

    Branz, Howard M.; Teplin, Charles; Stradins, Pauls

    2013-06-18

    A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

  16. Thermodynamics of enzyme-catalyzed reactions. Part 3. Hydrolases

    SciTech Connect (OSTI)

    Goldberg, R.N.; Tewari, Y.B.

    1994-11-01

    Equilibrium constants and enthalpy changes for reactions catalyzed by the hydrolase class of enzymes have been compiled. For each reaction the following information is given: the reference for the data; the reaction studied; the name of the enzyme used and its Enzyme Commission number; the method of measurement; the conditions of measurement (temperature, pH, ionic strength, and the buffer(s) and cofactor(s) used); the data and an evaluation of it; and, sometimes, commentary on the data and on any corrections which have been applied to it or any calculations for which the data have been used. The data from 146 references have been examined and evaluated. Chemical Abstract Service registry numbers are given for the substances involved in these various reactions. There is a cross reference between the substances and the Enzyme Commission numbers of the enzymes used to catalyze the reactions in which the substances participate.

  17. Ultra-high current density thin-film Si diode

    DOE Patents [OSTI]

    Wang; Qi

    2008-04-22

    A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

  18. Preparation and characterization of highly L2{sub 1}-ordered full-Heusler alloy Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} thin films for spintronics device applications

    SciTech Connect (OSTI)

    Wang Wenhong; Sukegawa, Hiroaki; Shan Rong; Furubayashi, Takao; Inomata, Koichiro

    2008-06-02

    We report the investigation of structure and magnetic properties of full-Heusler alloy Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} (CFAS) thin films grown on MgO-buffered MgO (001) substrates through magnetron sputtering. It was found that single-crystal CFAS thin films with high degree of L2{sub 1} ordering and sufficiently flat surface could be obtained after postdeposition annealing. All the films show a distinct uniaxial magnetic anisotropy with the easy axis of magnetization along the in-plane [110] direction. These results indicate that the use of the MgO buffer for CFAS is a promising approach for achieving a higher tunnel magnetoresistance ratio, and thus for spintronics device applications.

  19. Method for compression of binary data

    DOE Patents [OSTI]

    Berlin, Gary J.

    1996-01-01

    The disclosed method for compression of a series of data bytes, based on LZSS-based compression methods, provides faster decompression of the stored data. The method involves the creation of a flag bit buffer in a random access memory device for temporary storage of flag bits generated during normal LZSS-based compression. The flag bit buffer stores the flag bits separately from their corresponding pointers and uncompressed data bytes until all input data has been read. Then, the flag bits are appended to the compressed output stream of data. Decompression can be performed much faster because bit manipulation is only required when reading the flag bits and not when reading uncompressed data bytes and pointers. Uncompressed data is read using byte length instructions and pointers are read using word instructions, thus reducing the time required for decompression.

  20. Direct memory access transfer completion notification

    DOE Patents [OSTI]

    Archer, Charles J.; Blocksome, Michael A.; Parker, Jeffrey J.

    2010-08-17

    Methods, apparatus, and products are disclosed for DMA transfer completion notification that include: inserting, by an origin DMA engine on an origin compute node in an injection FIFO buffer, a data descriptor for an application message to be transferred to a target compute node on behalf of an application on the origin compute node; inserting, by the origin DMA engine, a completion notification descriptor in the injection FIFO buffer after the data descriptor for the message, the completion notification descriptor specifying an address of a completion notification field in application storage for the application; transferring, by the origin DMA engine to the target compute node, the message in dependence upon the data descriptor; and notifying, by the origin DMA engine, the application that the transfer of the message is complete, including performing a local direct put operation to store predesignated notification data at the address of the completion notification field.

  1. Surface and Interface Properties of 1012 Unit Cells Thick Sputter Deposited Epitaxial CeO2Films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Saraf, L. V.; Wang, C. M.; Engelhard, M. H.; Nachimuthu, P.

    2008-01-01

    Ultrathin and continuous epitaxial films with relaxed lattice strain can potentially maintain more of its bulk physical and chemical properties and are useful as buffer layers. We study surface, interface, and microstructural properties of ultrathin (?1012 unit cells thick) epitaxial ceria films grown on single crystal YSZ substrates. The out-of -plane and in-plane lattice parameters indicate relaxation in the continuous film due to misfit dislocations seen by high-resolution transmission electron microscopy (HRTEM) and substrate roughness of?1-2 unit cells, confirmed by atomic force microscopy and HRTEM. A combination of secondary sputtering, lattice mismatch, substrate roughness, and surface reduction creating secondary phasemorewas likely the cause of surface roughness which should be reduced to a minimum level for effective use of it as buffer layers.less

  2. Implementing asyncronous collective operations in a multi-node processing system

    DOE Patents [OSTI]

    Chen, Dong; Eisley, Noel A.; Heidelberger, Philip; Kumar, Sameer; Salapura, Valentina; Steinmacher-Burow, Burkhard

    2014-07-08

    A method, system, and computer program product are disclosed for implementing an asynchronous collective operation in a multi-node data processing system. In one embodiment, the method comprises sending data to a plurality of nodes in the data processing system, broadcasting a remote get to the plurality of nodes, and using this remote get to implement asynchronous collective operations on the data by the plurality of nodes. In one embodiment, each of the nodes performs only one task in the asynchronous operations, and each nodes sets up a base address table with an entry for a base address of a memory buffer associated with said each node. In another embodiment, each of the nodes performs a plurality of tasks in said collective operations, and each task of each node sets up a base address table with an entry for a base address of a memory buffer associated with the task.

  3. Completion processing for data communications instructions

    DOE Patents [OSTI]

    Blocksome, Michael A; Kumar, Sameer; Parker, Jeffrey J

    2014-05-20

    Completion processing of data communications instructions in a distributed computing environment, including receiving, in an active messaging interface (`AMI`) data communications instructions, at least one instruction specifying a callback function; injecting into an injection FIFO buffer of a data communication adapter, an injection descriptor, each slot in the injection FIFO buffer having a corresponding slot in a pending callback list; listing in the pending callback list any callback function specified by an instruction, incrementing a pending callback counter for each listed callback function; transferring payload data as per each injection descriptor, incrementing a transfer counter upon completion of each transfer; determining from counter values whether the pending callback list presently includes callback functions whose data transfers have been completed; calling by the AMI any such callback functions from the pending callback list, decrementing the pending callback counter for each callback function called.

  4. High Temperature Superconducting Thick Films

    DOE Patents [OSTI]

    Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Holesinger, Terry G.; Jia, Quanxi

    2005-08-23

    An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

  5. Microdialysis unit for molecular weight separation

    DOE Patents [OSTI]

    Smith, Richard D. (Richland, WA); Liu, Chuanliang (Richland, WA)

    1999-01-01

    The present invention relates generally to an apparatus and method for separating high molecular weight molecules from low molecular weight molecules. More specifically, the invention relates to the use of microdialysis for removal of the salt (low molecular weight molecules) from a nucleotide sample (high molecular weight molecules) for ESI-MS analysis. The dialysis or separation performance of the present invention is improved by (1) increasing dialysis temperature thereby increasing desalting efficiency and improving spectrum quality; (2) adding piperidine and imidazole to the dialysis buffer solution and reducing charge states and further increasing detection sensitivity for DNA; (3) using low concentrations (0-2.5 mM NH4OAc) of dialysis buffer and shifting the DNA negative ions to higher charge states, producing a nearly 10-fold increase in detection sensitivity and a slightly decreased desalting efficiency, or (4) any combination of (1), (2), and (3).

  6. Study of nonneutral plasma storage in a magnetic trap with a rotating electric field at the lepta facility

    SciTech Connect (OSTI)

    Eseev, M. K.; Kobets, A. G.; Meshkov, I. N.; Rudakov, A. Yu.; Yakovenko, S. L.

    2013-10-15

    Results from experimental studies of plasma storage in a Penning-Malmberg trap at the LEPTA facility are presented. The number of stored particles is found to increase substantially when using the so-called “rotating wall” method, in which a transverse rotating electric field generated by a cylindrical segmented electrode cut into four pairs is applied to the plasma storage region. The conditions of transverse compression of the plasma bunch under the action of the rotating field and buffer gas are studied. The optimal storage parameters are determined for these experimental conditions. Mechanisms of the action of the rotating field and buffer gas on the process of plasma storage are discussed.

  7. Apparatus for molecular weight separation

    DOE Patents [OSTI]

    Smith, Richard D. (Richland, WA); Liu, Chuanliang (Haverhill, MA)

    2001-01-01

    The present invention relates generally to an apparatus and method for separating high molecular weight molecules from low molecular weight molecules. More specifically, the invention relates to the use of microdialysis for removal of the salt (low molecular weight molecules) from a nucleotide sample (high molecular weight molecules) for ESI-MS analysis. The dialysis or separation performance of the present invention is improved by (1) increasing dialysis temperature thereby increasing desalting efficiency and improving spectrum quality; (2) adding piperidine and imidazole to the dialysis buffer solution and reducing charge states and further increasing detection sensitivity for DNA; (3) using low concentrations (0-2.5 mM NH4OAc) of dialysis buffer and shifting the DNA negative ions to higher charge states, producing a nearly 10-fold increase in detection sensitivity and a slightly decreased desalting efficiency, (4) conducting a two-stage separation or (5) any combination of (1), (2), (3) and (4).

  8. Sample collection system for gel electrophoresis

    DOE Patents [OSTI]

    Olivares, Jose A.; Stark, Peter C.; Dunbar, John M.; Hill, Karen K.; Kuske, Cheryl R.; Roybal, Gustavo

    2004-09-21

    An automatic sample collection system for use with an electrophoretic slab gel system is presented. The collection system can be used with a slab gel have one or more lanes. A detector is used to detect particle bands on the slab gel within a detection zone. Such detectors may use a laser to excite fluorescently labeled particles. The fluorescent light emitted from the excited particles is transmitted to low-level light detection electronics. Upon the detection of a particle of interest within the detection zone, a syringe pump is activated, sending a stream of buffer solution across the lane of the slab gel. The buffer solution collects the sample of interest and carries it through a collection port into a sample collection vial.

  9. Surface and Interface Properties of 10–12 Unit Cells Thick Sputter Deposited Epitaxial CeO 2 Films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Saraf, L. V.; Wang, C. M.; Engelhard, M. H.; Nachimuthu, P.

    2008-01-01

    Ulmore » trathin and continuous epitaxial films with relaxed lattice strain can potentially maintain more of its bulk physical and chemical properties and are useful as buffer layers. We study surface, interface, and microstructural properties of ultrathin ( ∼ 10–12 unit cells thick) epitaxial ceria films grown on single crystal YSZ substrates. The out-of -plane and in-plane lattice parameters indicate relaxation in the continuous film due to misfit dislocations seen by high-resolution transmission electron microscopy (HRTEM) and substrate roughness of ∼ 1-2 unit cells, confirmed by atomic force microscopy and HRTEM. A combination of secondary sputtering, lattice mismatch, substrate roughness, and surface reduction creating secondary phase was likely the cause of surface roughness which should be reduced to a minimum level for effective use of it as buffer layers.« less

  10. Method and apparatus for offloading compute resources to a flash co-processing appliance

    DOE Patents [OSTI]

    Tzelnic, Percy; Faibish, Sorin; Gupta, Uday K.; Bent, John; Grider, Gary Alan; Chen, Hsing -bung

    2015-10-13

    Solid-State Drive (SSD) burst buffer nodes are interposed into a parallel supercomputing cluster to enable fast burst checkpoint of cluster memory to or from nearby interconnected solid-state storage with asynchronous migration between the burst buffer nodes and slower more distant disk storage. The SSD nodes also perform tasks offloaded from the compute nodes or associated with the checkpoint data. For example, the data for the next job is preloaded in the SSD node and very fast uploaded to the respective compute node just before the next job starts. During a job, the SSD nodes perform fast visualization and statistical analysis upon the checkpoint data. The SSD nodes can also perform data reduction and encryption of the checkpoint data.

  11. Superconducting structure

    DOE Patents [OSTI]

    Kwon, Chuhee; Jia, Quanxi; Foltyn, Stephen R.

    2003-04-01

    A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.

  12. Superconducting Structure

    DOE Patents [OSTI]

    Kwon, Chuhee; Jia, Quanxi; Foltyn, Stephen R.

    2005-09-13

    A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.

  13. High Temperature Superconducting Thick Films

    DOE Patents [OSTI]

    Arendt, Paul N. (Los Alamos, NM); Foltyn, Stephen R. (Los Alamos, NM); Groves, James R. (Los Alamos, NM); Holesinger, Terry G. (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM)

    2005-08-23

    An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

  14. Method for compression of binary data

    DOE Patents [OSTI]

    Berlin, G.J.

    1996-03-26

    The disclosed method for compression of a series of data bytes, based on LZSS-based compression methods, provides faster decompression of the stored data. The method involves the creation of a flag bit buffer in a random access memory device for temporary storage of flag bits generated during normal LZSS-based compression. The flag bit buffer stores the flag bits separately from their corresponding pointers and uncompressed data bytes until all input data has been read. Then, the flag bits are appended to the compressed output stream of data. Decompression can be performed much faster because bit manipulation is only required when reading the flag bits and not when reading uncompressed data bytes and pointers. Uncompressed data is read using byte length instructions and pointers are read using word instructions, thus reducing the time required for decompression. 5 figs.

  15. Characterization of Optical Fiber Strength Under Applied Tensile Stress and Bending Stress

    SciTech Connect (OSTI)

    P.E. Klingsporn

    2011-08-01

    Various types of tensile testing and bend radius tests were conducted on silica core/silica cladding optical fiber of different diameters with different protective buffer coatings, fabricated by different fiber manufacturers. The tensile tests were conducted to determine not only the average fiber strengths at failure, but also the distribution in fracture strengths, as well as the influence of buffer coating on fracture strength. The times-to-failure of fiber subjected to constant applied bending stresses of various magnitudes were measured to provide a database from which failure times of 20 years or more, and the corresponding minimum bend radius, could be extrapolated in a statistically meaningful way. The overall study was done to provide an understanding of optical fiber strength in tensile loading and in applied bending stress as related to applications of optical fiber in various potential coizfgurations for weapons and enhanced surveillance campaigns.

  16. NANOG64_mnsmitasin_bltierney_buffersize.pptx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Evaluating Network Buffer Size requirements for Very Large Data Transfers Michael Smitasin Network Engineer LBLnet Services Group Lawrence Berkeley National Laboratory Brian Tierney Staff Scientist & Group Lead Advanced Network Technologies Group Energy Sciences Network NANOG 64 June 2015 Lawrence Berkeley National Laboratory 3 Lawrence Berkeley National Laboratory: https://www.lbl.gov Energy Sciences Network Connects Department of Energy National Laboratories to universities and research

  17. Updates and Status

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Burst Buffer Cori Phase II Questions about Cori II Application Porting and Performance NESAP NERSC-8 Procurement Programming models File Storage and I/O Edison PDSF Genepool Testbeds Retired Systems Storage & File Systems Data & Analytics Connecting to NERSC Queues and Scheduling Job Logs & Statistics Application Performance Training & Tutorials Software Policies User Surveys NERSC Users Group User Announcements Help Staff Blogs Request Repository Mailing List Operations for:

  18. Fluidic assembly for an ultra-high-speed chromosome flow sorter

    DOE Patents [OSTI]

    Gray, J.W.; Alger, T.W.; Lord, D.E.

    1978-11-26

    A fluidic assembly for an ultra-high-speed chromosome flow sorter using a fluid drive system of high pressure in the range of 250 to 1000 psi for greater flow velocity, a nozzle with an orifice having a small ratio of length to diameter for laminar flow rates well above the critical Reynolds number for the high flow velocity, and means for vibrating the nozzle along its axis at high frequencies in a range of about 300 kHz to 800 kHz ae described. The orifice is provided with a sharp edge at its inlet, and a conical section at its outlet for a transition from a short cylindrical aperture of small length to diameter ratio to free space. Sample and sheath fluids in separte low pressure reservoirs are transferred into separate high pressure buffer reservoirs through valve means which first permit the fluids to be loaded into the buffer reservoirs under low pressure. Once loaded, the buffer reservoirs are subjected ato high pressure and valves are operated to permit the buffer reservoirs to be emptied through the nozzle under high pressure. A sensor and decision logic is positioned at the exit of the nozzle, and a charging pulse is applied to the jet when a particle reaches a position further downstream where the droplets are formed. In order to adjust the timing of charge pulses, the distance between the sensing station at the outlet of the nozzle and the droplet breakoff point is determined by stroboscopic illumination of the droplet breakoff region using a laser and a revolving lucite cylinder for breaking up the coherency of the laser, and a beam on/off modulator. The breakoff point in the region thus illuminated may then be viewed, using a television monitor.

  19. Volume rendering of 3D scalar and vector fields at LLNL

    SciTech Connect (OSTI)

    Crawfis, R.; Max, N.; Becker, B.; Cabral, B.

    1993-04-01

    Simulation of complex 3-dimensional phenomena data sets which are hard to comprehend using conventional 2-dimensionally oriented visualization tools. One way to overcome this limitation is to employ various volume visualization techniques. While early volume visualization techniques worked well on simple scalar volumes they failed to exploit frame buffer hardware capabilities and handle higher order data such as vector field. Work at Lawrence Livermore National Laboratory has centered on developing new techniques and extending existing techniques.

  20. Multiple Mechanisms of Uranium Immobilization by Cellulomonas sp. Strain

    Office of Scientific and Technical Information (OSTI)

    ES6 (Journal Article) | SciTech Connect Journal Article: Multiple Mechanisms of Uranium Immobilization by Cellulomonas sp. Strain ES6 Citation Details In-Document Search Title: Multiple Mechanisms of Uranium Immobilization by Cellulomonas sp. Strain ES6 Removal of hexavalent uranium (U(VI)) from aqueous solution was studied using a Gram-positive facultative anaerobe, Cellulomonas sp. strain ES6, under anaerobic, non-growth conditions in bicarbonate and PIPES buffers. Inorganic phosphate was