Sample records for autostart buffer overflows

  1. T-699: EMC AutoStart Buffer Overflows Let Remote Users Execute...

    Broader source: Energy.gov (indexed) [DOE]

    99: EMC AutoStart Buffer Overflows Let Remote Users Execute Arbitrary Code T-699: EMC AutoStart Buffer Overflows Let Remote Users Execute Arbitrary Code August 23, 2011 - 3:35pm...

  2. T-626: Xen Multiple Buffer Overflow and Integer Overflow Vulnerabilities

    Broader source: Energy.gov [DOE]

    It was found that the xc_try_bzip2_decode() and xc_try_lzma_decode() decode routines did not correctly check for a possible buffer size overflow in the decoding loop. As well, several integer overflow flaws and missing error/range checking were found that could lead to an infinite loop. A privileged guest user could use these flaws to crash the guest or, possibly, execute arbitrary code in the privileged management domain (Dom0). (CVE-2011-1583)

  3. Detecting buffer overflows using testcase synthesis and code instrumentation

    E-Print Network [OSTI]

    Zhivich, Michael A

    2005-01-01T23:59:59.000Z

    The research presented in this thesis aims to improve existing approaches to dynamic buffer overflow detection by developing a system that utilizes code instrumentation and adaptive test case synthesis to find buffer ...

  4. V-182: Symantec Endpoint Protection Manager Buffer Overflow Vulnerabil...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    can be exploited to cause a buffer overflow via the web-based management console. IMPACT: Manipulation of data System Access SOLUTION: Vendor recommends updating to version 12.1...

  5. U-154: IBM Rational ClearQuest ActiveX Control Buffer Overflow...

    Energy Savers [EERE]

    U-154: IBM Rational ClearQuest ActiveX Control Buffer Overflow Vulnerability U-154: IBM Rational ClearQuest ActiveX Control Buffer Overflow Vulnerability April 24, 2012 - 7:00am...

  6. Using Program Transformation to Secure C Programs Against Buffer Overflows Christopher Dahn, Spiros Mancoridis

    E-Print Network [OSTI]

    Mancoridis, Spiros

    Using Program Transformation to Secure C Programs Against Buffer Overflows Christopher Dahn, Spiros Christopher.Stephen.Dahn, Spiros.Mancoridis¡ @drexel.edu Abstract Buffer overflows are the most common source

  7. T-695: Avaya Aura Application Server Buffer Overflow in 'cstore.exe' Lets Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    Avaya Aura Application Server Buffer Overflow in 'cstore.exe' Lets Remote Users Execute Arbitrary Code.

  8. T-559: Stack-based buffer overflow in oninit in IBM Informix...

    Broader source: Energy.gov (indexed) [DOE]

    Stack-based buffer overflow in oninit in IBM Informix Dynamic Server (IDS) 11.50 allows remote execution. PLATFORM: IBM Informix Dynamic Server (IDS) 11.50 ABSTRACT: Stack-based...

  9. V-049: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let...

    Broader source: Energy.gov (indexed) [DOE]

    RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users Execute Arbitrary Code PLATFORM: Windows RealPlayer 15.0.6.14 and prior. ABSTRACT: Two vulnerabilities were...

  10. A Taxonomy of Buffer Overflows for Evaluating Static and Dynamic Software Testing Tools*

    E-Print Network [OSTI]

    A Taxonomy of Buffer Overflows for Evaluating Static and Dynamic Software Testing Tools* Kendra Phone: 7819812711 Email: LIPPMANN@LL.MIT.EDU ABSTRACT A taxonomy that uses 22 attributes detection tools. Attributes in the taxonomy include the buffer location (e.g. stack, heap, data

  11. T-527: OpenSC Smart Card Serial Number Multiple Buffer Overflow Vulnerabilities

    Broader source: Energy.gov [DOE]

    OpenSC is prone to multiple buffer-overflow vulnerabilities because the application fails to perform adequate boundary checks on user-supplied input. Attackers may leverage these issues to execute arbitrary code in the context of the application. Failed attacks will cause denial-of-service conditions.

  12. T-562: Novell ZENworks Configuration Management novell-tftp.exe Buffer Overflow

    Broader source: Energy.gov [DOE]

    A vulnerability has been reported in Novell ZENworks Configuration Management, which can be exploited by malicious people to compromise a vulnerable system. The vulnerability is caused due to a boundary error in novell-tftp.exe when parsing requests. This can be exploited to cause a heap-based buffer overflow via a specially crafted request sent to UDP port 69. The vulnerability is reported in versions 10.3.1, 10.3.2, and 11.0.

  13. T-556: BMC PATROL Agent Service Daemon stack-based buffer overflow

    Broader source: Energy.gov [DOE]

    Stack-based buffer overflow in BMC PATROL Agent Service Daemon for in Performance Analysis for Servers, Performance Assurance for Servers, and Performance Assurance for Virtual Servers 7.4.00 through 7.5.10; Performance Analyzer and Performance Predictor for Servers 7.4.00 through 7.5.10; and Capacity Management Essentials 1.2.00 (7.4.15) allows remote attackers to execute arbitrary code via a crafted length value in a BGS_MULTIPLE_READS command to TCP port 6768.

  14. JC3 | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    update Red Hat: kernel security, bug fix, and enhancement update. August 23, 2011 T-699: EMC AutoStart Buffer Overflows Let Remote Users Execute Arbitrary Code EMC AutoStart Buffer...

  15. JC3 Bulletin Archive | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    update Red Hat: kernel security, bug fix, and enhancement update. August 23, 2011 T-699: EMC AutoStart Buffer Overflows Let Remote Users Execute Arbitrary Code EMC AutoStart Buffer...

  16. U-049: IBM Tivoli Netcool Reporter CGI Bug Lets Remote Users...

    Energy Savers [EERE]

    U-048: HP LaserJet Printers Unspecified Flaw Lets Remote Users Update Firmware with Arbitrary Code T-699: EMC AutoStart Buffer Overflows Let Remote Users Execute Arbitrary Code...

  17. U-097: PHP "php_register_variable_ex()" Code Execution Vulnerability...

    Broader source: Energy.gov (indexed) [DOE]

    and File Inclusion Bugs Let Remote Users Potentially Execute Arbitrary Code T-699: EMC AutoStart Buffer Overflows Let Remote Users Execute Arbitrary Code U-082: McAfee SaaS...

  18. U-047: Siemens Automation License Manager Bugs Let Remote Users...

    Broader source: Energy.gov (indexed) [DOE]

    U-048: HP LaserJet Printers Unspecified Flaw Lets Remote Users Update Firmware with Arbitrary Code T-699: EMC AutoStart Buffer Overflows Let Remote Users Execute Arbitrary Code...

  19. U-048: HP LaserJet Printers Unspecified Flaw Lets Remote Users...

    Broader source: Energy.gov (indexed) [DOE]

    No solution was available at the time of this entry. Addthis Related Articles T-699: EMC AutoStart Buffer Overflows Let Remote Users Execute Arbitrary Code U-047: Siemens...

  20. Security Protection and Checking for Embedded System Integration against Buffer

    E-Print Network [OSTI]

    Sha, Edwin

    serious security problems for decades. More than 50 percent of today's widely exploited vulnerabilities in the early days is the Internet worm in 1988 that made use of buffer overflow vulnerabilities in fingerd, and their variations which exploited known buffer overflow vulnerabilities in the Microsoft Index Service DLL. The two

  1. U-207: Pidgin 'mxit_show_message()' Function Stack-Based Buffer...

    Broader source: Energy.gov (indexed) [DOE]

    Pidgin 'mxitshowmessage()' Function Stack-Based Buffer Overflow Vulnerability. PLATFORM: Versions prior to Pidgin 2.10.5 vulnerable. ABSTRACT: Pidgin is prone to a stack-based...

  2. U-043: Attachmate Reflection Buffer Overflow in FTP Client Lets...

    Broader source: Energy.gov (indexed) [DOE]

    Lifecycle Attachmate Downloads SecurityTracker Alert ID: 1026340 IMPACT ASSESSMENT: Medium Discussion: A vulnerability was reported in Attachmate Reflection. A remote user...

  3. V-182: Symantec Endpoint Protection Manager Buffer Overflow Vulnerability |

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy China 2015of 2005UNSDepartmentFebruaryPhase|PotomacDepartment

  4. V-188: Apache XML Security XPointer Expressions Processing Buffer Overflow

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy China 2015of 2005UNSDepartmentFebruaryPhase|PotomacDepartmentRemoteVulnerability |

  5. V-182: Symantec Endpoint Protection Manager Buffer Overflow Vulnerability |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your DensityEnergy U.S.-China Electric Vehicle and03/02 TUE 08:59Capability for2:ofDepartment|

  6. V-219: Kingsoft Writer 2012 WPS Font Names Buffer Overflow Vulnerabili...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    a vulnerability in Kingsoft Writer 2012, which can be exploited by malicious people to compromise a user's system. PLATFORM: Kingsoft Office 2012, Kingsoft Weirwe 2012...

  7. U-108: Net4Switch ipswcom ActiveX Control Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    The vulnerability is caused due to a boundary error within the "CxDbgPrint()" function (cxcmrt.dll) when creating a debug message string.

  8. U-126: Cisco Adaptive Security Appliances Port Forwarder ActiveX Control Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in Cisco ASA. A remote user can cause arbitrary code to be executed on the target user's system.

  9. V-228: RealPlayer Buffer Overflow and Memory Corruption Error...

    Broader source: Energy.gov (indexed) [DOE]

    were reported in RealPlayer PLATFORM: RealPlayer 16.0.2.32 and prior ABSTRACT: A remote user can cause arbitrary code to be executed on the target user's system REFERENCE...

  10. V-056: FreeType BDF Glyph Processing Buffer Overflow Vulnerability |

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group current C3EDepartment of EnergyTheVulnerabilities | Department

  11. V-093: Symantec PGP Desktop Buffer Overflows Let Local Users Gain Elevated

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group current C3EDepartment ofPrivileges | Department of Energy Symantec PGP

  12. V-228: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed off Energy.gov. Are you sureReportsofDepartmentSeries |

  13. T-559: Stack-based buffer overflow in oninit in IBM Informix Dynamic Server

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn April 23, 2014,Zaleski -BlueprintThisVulnerabilities | Department of Energy

  14. T-629: Avaya WinPDM Multiple Buffer Overflow Vulnerabilities | Department

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn April 23, 2014,Zaleski -BlueprintThisVulnerabilities | DepartmentDepartment|Adobe

  15. T-684: Apple QuickTime Buffer Overflows Let Remote Users Execute Arbitrary

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn April 23, 2014,Zaleski -BlueprintThisVulnerabilities

  16. U-056: Linux Kernel HFS Buffer Overflow Lets Local Users Gain Root

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn April 23,EnergyChicopeeTechnologyfactTuscarora Phase IIDOE OGainService

  17. U-115: Novell GroupWise Client Address Book Processing Buffer Overflow

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn April 23,EnergyChicopeeTechnologyfactTuscarora Phase IIDOEArbitraryPrivileges,

  18. U-207: Pidgin 'mxit_show_message()' Function Stack-Based Buffer Overflow

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn April 23,EnergyChicopeeTechnologyfactTuscaroraDepartment of Energy AForgery,

  19. V-049: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO Overview OCHCOSystems Analysis Success|SustainableDepartmentregulations.gov to1: Red

  20. V-114: RealPlayer MP4 Processing Buffer Overflow Vulnerability | Department

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof Energy 2, 2015 -Helicopter-Japan Joint NuclearDepartment ofEnergy 094: IBMof

  1. U-154: IBM Rational ClearQuest ActiveX Control Buffer Overflow

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33Frequently AskedEnergyIssuesEnergyTransportation WorkDecemberInjury at FY6: Adobe|

  2. V-148: Novell iPrint Client Unspecified Buffer Overflow Vulnerability |

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy China 2015of 2005UNSDepartmentFebruaryPhase|Potomac RiverWithDepartment of Energy

  3. V-169: Linux Kernel "iscsi_add_notunderstood_response()" Buffer Overflow

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy China 2015of 2005UNSDepartmentFebruaryPhase|PotomacDepartment of EnergySpoofAttacks

  4. V-219: Kingsoft Writer 2012 WPS Font Names Buffer Overflow Vulnerability |

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy China 2015ofDepartment of Energy Microsoft SecurityEnergyDepartment of Energy

  5. BUFFERED WELL FIELD OUTLINES

    U.S. Energy Information Administration (EIA) Indexed Site

    OIL & GAS FIELD OUTLINES FROM BUFFERED WELLS The VBA Code below builds oil & gas field boundary outlines (polygons) from buffered wells (points). Input well points layer must be a...

  6. Response of the Greenland-Scotland overflow to changing deep water supply from the Arctic Mediterranean

    E-Print Network [OSTI]

    Response of the Greenland-Scotland overflow to changing deep water supply from the Arctic with a topographic barrier is used to study the response of the overflows across the Greenland-Scotland Ridge of the exchanges across the ridge is seen when the supply decreases. Transport variations in the East-Greenland

  7. Automatic Synthesis of Filters to Discard Buffer Overflow Attacks: A Step Towards Realizing Self-Healing Systems

    E-Print Network [OSTI]

    Sekar, R.

    such as those due to worms, these protection mechanisms lead to re- peated restarts of the victim application- ploit the same vulnerability. An important benefit of self-healing is that it avoids system resources]. Although these techniques can de- tect attacks before vital system resources (such as files

  8. STAMP-Based Analysis of a Refinery Overflow Accident Nancy Leveson, Margaret Stringfellow, and John Thomas

    E-Print Network [OSTI]

    Leveson, Nancy

    1 STAMP-Based Analysis of a Refinery Overflow Accident Nancy Leveson, Margaret Stringfellow, and John Thomas As an example of STAMP, we have taken an accident report produced for a real refinery

  9. Riparian Buffers for Wildlife Benefits of Riparian Buffers

    E-Print Network [OSTI]

    Boyer, Elizabeth W.

    , develop- ment, and recreation. Losing these buffers has negatively affected wildlife habitat and water the information you will need to create an effective riparian buffer for wildlife while pro- tecting water quality for wildlife; but they also improve water quality for humans. In general, the wider and more diversely planted

  10. Resource dimensioning through buffer sampling

    E-Print Network [OSTI]

    Boucherie, Richard J.

    , theoretical dimensioning formulae that estimate the required capacity C as a function of the input traffic the buffer content, estimates the buffer content distribution, and `inverts' this to the variance. We of capacity that should be added, advanced modeling and performance techniques are required. These predictions

  11. Electrodialysis operation with buffer solution

    DOE Patents [OSTI]

    Hryn, John N. (Naperville, IL); Daniels, Edward J. (Orland Park, IL); Krumdick, Greg K. (Crete, IL)

    2009-12-15T23:59:59.000Z

    A new method for improving the efficiency of electrodialysis (ED) cells and stacks, in particular those used in chemical synthesis. The process entails adding a buffer solution to the stack for subsequent depletion in the stack during electrolysis. The buffer solution is regenerated continuously after depletion. This buffer process serves to control the hydrogen ion or hydroxide ion concentration so as to protect the active sites of electrodialysis membranes. The process enables electrodialysis processing options for products that are sensitive to pH changes.

  12. Neogene overflow of Northern Component Water at the Greenland-Scotland Ridge

    E-Print Network [OSTI]

    Samworth, Richard

    Neogene overflow of Northern Component Water at the Greenland-Scotland Ridge H. R. Poore Department counterpart Northern Component Water (NCW), across the Greenland-Scotland Ridge (GSR) is thought to have,280 words, 12 figures, 3 tables. Keywords: Northern Component Water; Greenland-Scotland Ridge; Iceland

  13. Stacked switched capacitor energy buffer architecture

    E-Print Network [OSTI]

    Chen, Minjie, S.M. Massachusetts Institute of Technology

    2012-01-01T23:59:59.000Z

    Electrolytic capacitors are often used for energy buffering applications, including buffering between single-phase ac and dc. While these capacitors have high energy density compared to film and ceramic capacitors, their ...

  14. Message Buffering in Epidemic Data Dissemination

    E-Print Network [OSTI]

    Caglar, Mine

    Message Buffering in Epidemic Data Dissemination I. This work is supported in part by TUBITAK (The, every process of the system is potentially involved in the dissemination of messages [4]. Every process buffers every message (information unit) it receives up to a certain buffer capacity b, and forwards

  15. Energy Efficient Buffer Cache Replacement Jianhui Yue

    E-Print Network [OSTI]

    Zhu, Yifeng

    Energy Efficient Buffer Cache Replacement Jianhui Yue Univ. of Maine, Orono jyue for buffer caching and thus cache replacement becomes critical. This paper investi- gates the tradeoff between these two interacting factors and proposes three energy-aware buffer cache replacement al- gorithm

  16. Joint Buffer & Server Allocation Van Woensel et al. Buffer and Server Allocation in General

    E-Print Network [OSTI]

    Cruz, Frederico

    Joint Buffer & Server Allocation Van Woensel et al. Buffer and Server Allocation in General Multi-Server Abstract -- This paper deals with the joint optimization of the number of buffers and servers, an important issue since buffers and servers represent a significant amount of investment for many companies

  17. Buffered Electrochemical Polishing of Niobium

    SciTech Connect (OSTI)

    Gianluigi Ciovati, Hui Tian, Sean Corcoran

    2011-03-01T23:59:59.000Z

    The standard preparation of superconducting radio-frequency (SRF) cavities made of pure niobium include the removal of a 'damaged' surface layer, by buffered chemical polishing (BCP) or electropolishing (EP), after the cavities are formed. The performance of the cavities is characterized by a sharp degradation of the quality factor when the surface magnetic field exceeds about 90 mT, a phenomenon referred to as 'Q-drop'. In cavities made of polycrystalline fine grain (ASTM 5) niobium, the Q-drop can be significantly reduced by a low-temperature ({approx} 120 C) 'in-situ' baking of the cavity if the chemical treatment was EP rather than BCP. As part of the effort to understand this phenomenon, we investigated the effect of introducing a polarization potential during buffered chemical polishing, creating a process which is between the standard BCP and EP. While preliminary results on the application of this process to Nb cavities have been previously reported, in this contribution we focus on the characterization of this novel electrochemical process by measuring polarization curves, etching rates, surface finish, electrochemical impedance and the effects of temperature and electrolyte composition. In particular, it is shown that the anodic potential of Nb during BCP reduces the etching rate and improves the surface finish.

  18. Feasibility of cold rolling titanium strip cast by the plasma melt overflow process

    SciTech Connect (OSTI)

    Gaspar, T.A. [Ribbon Technology Corp., Columbus, OH (United States); Sukonnik, I.M. [Texas Instruments, Attleboro, MA (United States); Bird, R.K.; Brewer, W.D. [National Aeronautics and Space Administration, Hampton, VA (United States). Langley Research Center

    1995-12-31T23:59:59.000Z

    A new fabrication method tailored specifically for titanium alloys and intermetallics combined direct strip casting and cold rolling to produce foil products by completely eliminating hot working steps. Titanium strips 0.4-mm- to 0.7-mm-thick and 100-mm-wide were cast by the plasma melt overflow process. The cast strips were cold rolled to 0.15-mm-thick, fully dense foils. The effect of thermal and mechanical treatments on the microstructure of the cast strip was investigated. The cold rolled foils were characterized by measurement of average surface roughness, chemical composition, gas content and tensile properties.

  19. Buffer assignment algorithms for data driven architectures

    E-Print Network [OSTI]

    Chatterjee, Mitrajit

    1994-01-01T23:59:59.000Z

    algorithms have been shown to be O(V x E) and O(V'xlogV) re spectively; an improvement over the existing strategies. A novel buffer distribution algorithm to maximize the pipelining and throughput has also been proposed. The number of buffers obtained...

  20. Stepwise Probabilistic Buffering for Epidemic Information Dissemination

    E-Print Network [OSTI]

    Caglar, Mine

    and distributes the load of buffering evenly to the entire system where all peers have only partial knowledge and distributes the load of buffering to the entire system where every peer does not have the complete view. They are simple to implement, inexpensive to run, robust and they impose a constant load on the links

  1. T-660: OpenSSH on FreeBSD Has Buffer Overflow in pam_thread() That Lets Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    The module does not adequately validate user input leading to an cross-site scripting (XSS) possibility in certain circumstances.

  2. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2010-06-15T23:59:59.000Z

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  3. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2006-10-31T23:59:59.000Z

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  4. Design and synthesis of novel isoelectric buffers

    E-Print Network [OSTI]

    Lalwani, Sanjiv Kumar Shankerdass

    2006-04-12T23:59:59.000Z

    made by attaching an isoelectric buffer of a welldefined pI value (such as iminodiacetic acid, IDA, aspartic acid, ASP or glutamic acid, GLU) to the PVA backbone and crosslinking the PVA strands, in situ. The pH in these membranes does not change...

  5. PBC: A Partially Buffered Crossbar Packet Switch

    E-Print Network [OSTI]

    Kuzmanov, Georgi

    fabric is widely used as the interconnect of high-performance packet switches due to its low cost-performance packet switches because of its low cost and scalability. As a result, the vast majority and scalability. There are two main variants of the crossbar fabric: unbuffered and internally buffered. On one

  6. Efficient buffer design algorithms for production line profit maximization

    E-Print Network [OSTI]

    Shi, Chuan, Ph. D. Massachusetts Institute of Technology

    2012-01-01T23:59:59.000Z

    A production line is a manufacturing system where machines are connected in series and separated by buffers. The inclusion of buffers increases the average production rate of the line by limiting the propagation of ...

  7. Buffer for a gamma-insensitive optical sensor with gas and a buffer assembly

    DOE Patents [OSTI]

    Kruger, H.W.

    1994-05-10T23:59:59.000Z

    A buffer assembly is disclosed for a gamma-insensitive gas avalanche focal plane array operating in the ultra-violet/visible/infrared energy wavelengths and using a photocathode and an avalanche gas located in a gap between an anode and the photocathode. The buffer assembly functions to eliminate chemical compatibility between the gas composition and the materials of the photocathode. The buffer assembly in the described embodiment is composed of two sections, a first section constructed of glass honeycomb under vacuum and a second section defining a thin barrier film or membrane constructed, for example, of Al and Be, which is attached to and supported by the honeycomb. The honeycomb section, in turn, is supported by and adjacent to the photocathode. 7 figures.

  8. Floor Buffer Guidelines Floor buffers can expose employees to noise, hazardous materials, and hazards related to

    E-Print Network [OSTI]

    de Lijser, Peter

    produced by the propane buffer is considered high. Hearing protection such as ear plugs and ear muffs and use of hearing protection. Propane Re-filling Only trained and qualified personnel may refill propane containers. Propane Storage Storage of propane should occur in identified well ventilated storage containers

  9. System and method for implementing periodic early discard in on-chip buffer memories of network elements

    DOE Patents [OSTI]

    Francini, Andrea

    2013-05-14T23:59:59.000Z

    An advance is made over the prior art in accordance with the principles of the present invention that is directed to a new approach for a system and method for a buffer management scheme called Periodic Early Discard (PED). The invention builds on the observation that, in presence of TCP traffic, the length of a queue can be stabilized by selection of an appropriate frequency for packet dropping. For any combination of number of TCP connections and distribution of the respective RTT values, there exists an ideal packet drop frequency that prevents the queue from over-flowing or under-flowing. While the value of the ideal packet drop frequency may quickly change over time and is sensitive to the series of TCP connections affected by past packet losses, and most of all is impossible to compute inline, it is possible to approximate it with a margin of error that allows keeping the queue occupancy within a pre-defined range for extended periods of time. The PED scheme aims at tracking the (unknown) ideal packet drop frequency, adjusting the approximated value based on the evolution of the queue occupancy, with corrections of the approximated packet drop frequency that occur at a timescale that is comparable to the aggregate time constant of the set of TCP connections that traverse the queue.

  10. alpha storage buffers: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of electrical energy storage (EES) elements, utilizing the benefits Pedram, Massoud 4 BATTERY-POWERED, ELECTRIC-DRIVE VEHICLES PROVIDING BUFFER STORAGE FOR PV CAPACITY VALUE...

  11. Back contact buffer layer for thin-film solar cells

    DOE Patents [OSTI]

    Compaan, Alvin D.; Plotnikov, Victor V.

    2014-09-09T23:59:59.000Z

    A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

  12. Surface Treatments of Nb by Buffered Electropolishing

    SciTech Connect (OSTI)

    Wu, Andy T. [JLAB; Rimmer, Robert A. [JLAB; Ciovati, Gianluigi [JLAB; Manus, Robert L. [JLAb; Reece, Charles E. [JLAB; Williams, J. S. [JLAB; Eozénou, F. [CEA, Gif-sur-Yvette; Jin, S. [PKU/IHIP, Beijing; Lin, L. [PKU/IHIP, Beijing; Lu, X.Y. [PKU/IHIP, Beijing; Mammosser, John D. [JLAB; Wang, E. [BNL

    2009-11-01T23:59:59.000Z

    Buffered electropolishing (BEP) is a Nb surface treatment technique developed at Jefferson Lab1. Experimental results obtained from flat Nb samples show2-4 that BEP can produce a surface finish much smoother than that produced by the conventional electropolishing (EP), while Nb removal rate can be as high as 4.67 ?m/min. This new technique has been applied to the treatments of Nb SRF single cell cavity employing a vertical polishing system5 constructed at JLab as well as a horizontal polishing system at CEA Saclay. Preliminary results show that the accelerating gradient can reach 32 MV/m for a large grain cavity and 26.7 MV/m for a regular grain cavity. In this presentation, the latest progresses from the international collaboration between Peking University, CEA Saclay, and JLab on BEP will be summarized.

  13. U-115: Novell GroupWise Client Address Book Processing Buffer...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Internet Agent "Content-Length" Integer Overflow Vulnerability T-534: Vulnerability in the PDF distiller of the BlackBerry Attachment Service for the BlackBerry Enterprise Server...

  14. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOE Patents [OSTI]

    Morse, Jeffrey D. (Martinez, CA); Cooper, Gregory A. (Pleasant Hill, CA)

    2002-01-01T23:59:59.000Z

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  15. Methods for improved growth of group III nitride buffer layers

    DOE Patents [OSTI]

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15T23:59:59.000Z

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  16. Low Power Nanoscale Buffer Management for Network on Chip Routers

    E-Print Network [OSTI]

    Mohanty, Saraju P.

    Low Power Nanoscale Buffer Management for Network on Chip Routers Suman K. Mandal Texas A power dissipation. We present a novel dynamic power management technique for low power NoC router buffers using nano CMOS SRAMS. A feedback controller was designed for block level power management

  17. Adaptive-Buffer Power Save Mechanism for Mobile Multimedia Streaming

    E-Print Network [OSTI]

    Adaptive-Buffer Power Save Mechanism for Mobile Multimedia Streaming Janet Adams Performance such as those involving mobile multimedia streaming. This paper proposes an Adaptive-Buffer Power Save mecha and consequently saving power. Data is eventually delivered in one of the station's following attempts to receive

  18. Buffer Minimization in Pass Transistor Logic Advanced Technology Group

    E-Print Network [OSTI]

    Zhou, Hai

    function cells and four inverters with various drive capabilities. The approach in [2] also utilizesBuffer Minimization in Pass Transistor Logic Hai Zhou Advanced Technology Group Synopsys, Inc are inverters, where phase assignment need to be done with buffer insertion. Exper­ iments are done on MCNC

  19. Replenishing data descriptors in a DMA injection FIFO buffer

    DOE Patents [OSTI]

    Archer, Charles J. (Rochester, MN); Blocksome, Michael A. (Rochester, MN); Cernohous, Bob R. (Rochester, MN); Heidelberger, Philip (Cortlandt Manor, NY); Kumar, Sameer (White Plains, NY); Parker, Jeffrey J. (Rochester, MN)

    2011-10-11T23:59:59.000Z

    Methods, apparatus, and products are disclosed for replenishing data descriptors in a Direct Memory Access (`DMA`) injection first-in-first-out (`FIFO`) buffer that include: determining, by a messaging module on an origin compute node, whether a number of data descriptors in a DMA injection FIFO buffer exceeds a predetermined threshold, each data descriptor specifying an application message for transmission to a target compute node; queuing, by the messaging module, a plurality of new data descriptors in a pending descriptor queue if the number of the data descriptors in the DMA injection FIFO buffer exceeds the predetermined threshold; establishing, by the messaging module, interrupt criteria that specify when to replenish the injection FIFO buffer with the plurality of new data descriptors in the pending descriptor queue; and injecting, by the messaging module, the plurality of new data descriptors into the injection FIFO buffer in dependence upon the interrupt criteria.

  20. Gilliam County Riparian Buffers; 2003-2004 Annual Reports.

    SciTech Connect (OSTI)

    Coiner, Josh (Gilliam Soil and Water Conservation District, Condon, OR)

    2004-06-01T23:59:59.000Z

    Interest appears to be at an all-time high for riparian conservation programs in Gilliam County. With the recently added Herbaceous Buffer and the already established CREP program interest is booming. However, more and more people are turning towards the herbaceous buffer because of expense. The riparian forest buffer is becoming too expensive. Even with the excellent cost share and incentives landowners are having trouble with Farm Service Agency's payment limitation. Because of this payment limitation landowners are not receiving their full rental and incentive payments, usually in year one. This has cooled the installation of riparian forest buffers and peaked interest in the CP-29 (Herbaceous Buffer for Wildlife). Either way, riparian lands are being enhanced and water quality is being improved. Year three should be very similar to the accomplishments of year 2. There has already been several projects proposed that may or may not be approved during year 3. I am currently working on three projects that are all over 2.5 miles long on each side and total anywhere from 60 to 250 acres in size. Along with these three projects there at least seven small projects being proposed. Four of those projects are riparian forest buffers and the remaining are herbaceous buffers.

  1. Wasco Riparian Buffer Project, Annual Report 2003-2004.

    SciTech Connect (OSTI)

    Graves, Ron

    2003-07-01T23:59:59.000Z

    This project implements riparian buffer systems in the Mid-Columbia, addressing limiting factors identified in the Deschutes River Sub-basin Summary, March 2, 2001. This project is providing the technical planning support needed to implement at least 20 riparian buffer system contracts on approximately 800 acres covering an estimated 36 miles of anadromous fish streams. During this second year of implementation, 17 buffer contracts were established on 173,462 ft. of stream (25.9 miles). Acreage included in the buffers totaled 891.6 acres. Average buffer width was 112 ft. on each side of the stream. Cumulative totals through the first two project years are 26 buffers on 36.6 stream miles covering 1,283.6 acres. Actual implementation costs, lease payments, and maintenance costs will be borne by existing USDA programs: Conservation Reserve (CRP) and Conservation Reserve Enhancement Programs (CREP). The lease period of each contract may vary from 10 to 15 years. During this year, the average lease period was 14.9 years. The total value of contracts established this year is $1,421,268 compared with $55,504 in BPA contract costs to provide the technical support needed to get the contracts implemented. Cumulative contract value for the first two years is $1,919,451 compared to $103,329 cost to BPA. This project provides technical staffing to conduct assessments and develop conservation plans required for riparian buffer systems to help keep pace with a growing backlog of potential buffer projects. This project meets a critical need in the lower Deschutes and lower John Day River basins and complements the Riparian Buffer project approved for Fifteenmile watershed, Project No. 2001-021-00 begun in fiscal year 2001. This project supports RPA 150 and 153 as required under the Federal Hydropower System biological opinion and benefits the mid-Columbia ESU of steelhead.

  2. Enhanced adhesion for LIGA microfabrication by using a buffer layer

    DOE Patents [OSTI]

    Bajikar, Sateesh S. (San Jose, CA); De Carlo, Francesco (Darien, IL); Song, Joshua J. (Naperville, IL)

    2001-01-01T23:59:59.000Z

    The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

  3. Buffer layers for REBCO films for use in superconducting devices

    SciTech Connect (OSTI)

    Goyal, Amit; Wee, Sung-Hun

    2014-06-10T23:59:59.000Z

    A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

  4. Enhanced adhesion for LIGA microfabrication by using a buffer layer

    DOE Patents [OSTI]

    Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

    2004-01-27T23:59:59.000Z

    The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

  5. Optimal control of wireless networks with finite buffers

    E-Print Network [OSTI]

    Le, Long Bao

    This paper considers network control for wireless networks with finite buffers. We investigate the performance of joint flow control, routing, and scheduling algorithms which achieve high network utility and deterministically ...

  6. Optimizing the availability of a buffered industrial process

    DOE Patents [OSTI]

    Martz, Jr., Harry F.; Hamada, Michael S.; Koehler, Arthur J.; Berg, Eric C.

    2004-08-24T23:59:59.000Z

    A computer-implemented process determines optimum configuration parameters for a buffered industrial process. A population size is initialized by randomly selecting a first set of design and operation values associated with subsystems and buffers of the buffered industrial process to form a set of operating parameters for each member of the population. An availability discrete event simulation (ADES) is performed on each member of the population to determine the product-based availability of each member. A new population is formed having members with a second set of design and operation values related to the first set of design and operation values through a genetic algorithm and the product-based availability determined by the ADES. Subsequent population members are then determined by iterating the genetic algorithm with product-based availability determined by ADES to form improved design and operation values from which the configuration parameters are selected for the buffered industrial process.

  7. Buffer-Gas Cooled Bose-Einstein Condensate

    E-Print Network [OSTI]

    Ketterle, Wolfgang

    We report the creation of a Bose-Einstein condensate using buffer-gas cooling, the first realization of Bose-Einstein condensation using a broadly general method which relies neither on laser cooling nor unique atom-surface ...

  8. Gas pile-up, gap overflow, and Type 1.5 migration in circumbinary disks: general theory

    E-Print Network [OSTI]

    Bence Kocsis; Zoltan Haiman; Abraham Loeb

    2012-09-13T23:59:59.000Z

    Many astrophysical binaries, from planets to black holes, exert strong torques on their circumbinary accretion disks, and are expected to significantly modify the disk structure. Despite the several decade long history of the subject, the joint evolution of the binary + disk system has not been modeled with self-consistent assumptions for arbitrary mass ratios and accretion rates. Here we solve the coupled binary-disk evolution equations analytically in the strongly perturbed limit, treating the azimuthally-averaged angular momentum exchange between the disk and the binary and the modifications to the density, scale-height, and viscosity self-consistently, including viscous and tidal heating, diffusion limited cooling, radiation pressure, and the orbital decay of the binary. We find a solution with a central cavity and a migration rate similar to those previously obtained for Type-II migration, applicable for large masses and binary separations, and near-equal mass ratios. However, we identify a distinct new regime, applicable at smaller separations and masses, and mass ratio in the range 0.001piles up outside the binary's orbit, but rather than creating a cavity, it continuously overflows as in a porous dam. The disk profile is intermediate between a weakly perturbed disk (producing Type-I migration) and a disk with a gap (with Type-II migration). However, the migration rate of the secondary is typically slower than both Type-I and Type-II rates. We term this new regime "Type-1.5" migration.

  9. Sodium bicarbonate and Alkaten as buffers in beef cattle diets

    E-Print Network [OSTI]

    Boerner, Benedict Joseph

    1985-01-01T23:59:59.000Z

    SODIUM BICARBONATE AND ALKATEN AS BUFFERS IN BEEF CATTLE DIETS A Thesis by BENED ICT JOSEP H BOERNER Submitted to the Graduate College of Texas A8M University im partial fulfillment of the requirements for the degree of MASTER OF SC IENCE... August 1985 Major Subject: Nutrition SODIUM BICARBONATE AND ALKATEN AS BUFFERS IN BEEF CATTLE DIETS A thesis by BENEDICT JOSEPH BOERNER Approved as to style and content by: Flo M. Byers (Chairma of Committee) ~r( Gerald T. Schelling (Member...

  10. Message communications of particular message types between compute nodes using DMA shadow buffers

    DOE Patents [OSTI]

    Blocksome, Michael A. (Rochester, MN); Parker, Jeffrey J. (Rochester, MN)

    2010-11-16T23:59:59.000Z

    Message communications of particular message types between compute nodes using DMA shadow buffers includes: receiving a buffer identifier specifying an application buffer having a message of a particular type for transmission to a target compute node through a network; selecting one of a plurality of shadow buffers for a DMA engine on the compute node for storing the message, each shadow buffer corresponding to a slot of an injection FIFO buffer maintained by the DMA engine; storing the message in the selected shadow buffer; creating a data descriptor for the message stored in the selected shadow buffer; injecting the data descriptor into the slot of the injection FIFO buffer corresponding to the selected shadow buffer; selecting the data descriptor from the injection FIFO buffer; and transmitting the message specified by the selected data descriptor through the data communications network to the target compute node.

  11. U-279: Cisco Firewall Services Module Bugs Let Remote Users Execute...

    Office of Environmental Management (EM)

    of the DCERPC Inspection Buffer Overflow Vulnerability may cause a stack overflow and permit the execution of arbitrary commands. Solution: The vendor has issued a fix. Addthis...

  12. Fifteenmile Creek Riparian Buffers Project, Annual Report 2002-2003.

    SciTech Connect (OSTI)

    Graves, Ron

    2004-02-01T23:59:59.000Z

    This project implements riparian buffer systems in the Mid-Columbia, addressing limiting factors identified in the Fifteenmile Subbasin Summary, June 30, 2000. The project is providing the technical planning support needed to implement at least 36 riparian buffer system contracts on approximately 872 acres covering an estimated 40 miles of anadromous fish streams over a three year period. During this second year of the project, 11 buffer contracts were implemented on 10.9 miles of stream. Buffer widths averaged 132 ft. on each side of the stream. Implementation included prescribed plantings, fencing, and related practices. Actual implementation costs, lease payments, and maintenance costs are borne by existing USDA programs: Conservation Reserve and Conservation Reserve Enhancement Programs. The lease period of each contract may vary between 10 to 15 years. During this year the average was 14.6 years. The total value of contracts established this year is $666,121 compared with $71,115 in Bonneville Power Administration (BPA) contract costs to provide the technical support needed to get the contracts implemented. This project provides technical staffing to conduct assessments and develop plans to help keep pace with the growing backlog of potential riparian buffer projects. Word of mouth from satisfied customers has brought in many new sign-ups during the year. In addition, specific outreach efforts targeting the orchard areas of the county began to bear fruit with orchardists sign-ups as the project year ended. Progress this second year of project includes only work accomplished in the Fifteenmile subbasin. A similar but separate effort to implement buffers in the Columbia Plateau Province was initiated during the year under project number 2002-019-00. This project supports RPA 150 and 153 as required under the Federal Hydropower System biological opinion.

  13. Energy Efficient Prefetching with Buffer Disks for Cluster File Systems

    E-Print Network [OSTI]

    Qin, Xiao

    Energy Efficient Prefetching with Buffer Disks for Cluster File Systems Adam Manzanares, Xiaojun the energy- efficiency of large scale parallel storage systems. To address these issues we introduce EEVFS (Energy Efficient Virtual File System), which is able to manage data placement and disk states to help

  14. Maximizing Throughput in Wireless Networks with Finite Internal Buffers

    E-Print Network [OSTI]

    Chang, Cheng-Shang

    Maximizing Throughput in Wireless Networks with Finite Internal Buffers Ching-Min Lien, Cheng of a discrete-time wireless network, where only certain sets of links can transmit simultaneously. It is well of the configuration vectors determines the capacity region of the wireless network. In the literature, packet

  15. Predictive Line Buffer: A fast, Energy Efficient Cache Architecture

    E-Print Network [OSTI]

    Aboelaze, Mokhtar

    . In this paper, we propose a new cache architecture that results in a faster memory access and lower energy memory access time, and energy consuption. In this paper, we propose a new cache architecturePredictive Line Buffer: A fast, Energy Efficient Cache Architecture Kashif Ali MoKhtar Aboelaze

  16. WSN Lifetime Optimization through Controlled Sink Mobility and Packet Bufferization

    E-Print Network [OSTI]

    Boyer, Edmond

    delay. One solution to trade-off energy and latency is to consider hybrid routing schemes which combineWSN Lifetime Optimization through Controlled Sink Mobility and Packet Bufferization Tifenn Rault 20529 60205 Compiègne, France Abstract--Maximizing the lifetime of energy constrained wire- less sensor

  17. Counterexample-Guided SMT-Driven Optimal Buffer Sizing

    E-Print Network [OSTI]

    Seshia, Sanjit A.

    Counterexample-Guided SMT-Driven Optimal Buffer Sizing Bryan A. Brady1 Daniel Holcomb1 Sanjit A behavior. Our approach uses model checking based on satisfiability modulo theories (SMT) solvers, within theories (SMT) solvers [6]. In our model, the traffic injected into the network is non

  18. Congestion Avoidance Based on Lightweight Buffer Management in Sensor Networks

    E-Print Network [OSTI]

    Chen, Shigang

    causes energy waste, throughput reduction, and information loss. However, the important problem space, communication bandwidth, and above all, energy supply. When a critical event triggers a surge based on light- weight buffer management. We describe simple yet effective approaches that prevent data

  19. Effectiveness of Native Species Buffer Zones for Nonstructural Treatment of Urban Runoff

    E-Print Network [OSTI]

    Glick, Roger H.; Wolfe, Mary Leigh; Thurow, Thomas L.

    A field study was conducted to determine the influences of vegetation composition, buffer width, and infiltration rate on the effectiveness of native vegetation buffer zones as nonstructural treatments of urban runoff with respect to increasing...

  20. The design and implementation of the buffer manager for an experimental relational database management system

    E-Print Network [OSTI]

    Li, Zaichun

    1994-01-01T23:59:59.000Z

    Buffer management is an essential component of database management. This thesis presents a design and implementation of the buffer manager for an experimental relational database management system. The relationship and difference between database...

  1. Buffered coscheduling for parallel programming and enhanced fault tolerance

    DOE Patents [OSTI]

    Petrini, Fabrizio (Los Alamos, NM); Feng, Wu-chun (Los Alamos, NM)

    2006-01-31T23:59:59.000Z

    A computer implemented method schedules processor jobs on a network of parallel machine processors or distributed system processors. Control information communications generated by each process performed by each processor during a defined time interval is accumulated in buffers, where adjacent time intervals are separated by strobe intervals for a global exchange of control information. A global exchange of the control information communications at the end of each defined time interval is performed during an intervening strobe interval so that each processor is informed by all of the other processors of the number of incoming jobs to be received by each processor in a subsequent time interval. The buffered coscheduling method of this invention also enhances the fault tolerance of a network of parallel machine processors or distributed system processors

  2. SOLARCAP: Super Capacitor Buffering of Solar Energy for Self-Sustainable Field Systems

    E-Print Network [OSTI]

    Shen, Kai

    buffering, a system that we call SOLARCAP. Using solar panels paired with super-capacitors presents uniqueSOLARCAP: Super Capacitor Buffering of Solar Energy for Self-Sustainable Field Systems Amal Fahad of the conventional battery-based energy storage, this paper argues that the super capacitor buffering of solar energy

  3. Mechanical interaction between rock, buffer and canister in repositories

    SciTech Connect (OSTI)

    Borgesson, L. [Clay Technology AB, Lund (Sweden)

    1993-12-31T23:59:59.000Z

    The bentonite clay buffer, which is used in the repository concept of Sweden as well as many other countries, has an important role for mechanical protection of the canister. Of special interest is the effect of a rock shear, i.e. displacement of the rock along a fracture intersecting the deposition hole, on the canister. The article shows the results of some FEM calculations of a rock shear when the new composite copper/steel canister, is used. The effect of the swelling pressure from the bentonite before shear and the effect of a symmetric as well as an asymmetric rock shear will be shown. The calculations have been preceded by extensive laboratory tests and verification calculations by which material models for the buffer and proper calculation techniques have been developed. The material model for the clay is an elastic plastic model in which porous elasticity, based on the effective stress theory, is combined with Drucker-Prager plasticity. The results indicate that the bentonite clay acts as a very good mechanical buffer against such rock displacements. Although plastic yielding may occur, mainly in the copper, the plastic strain is not more than a few percent just after the shear.

  4. Gas pile-up, gap overflow, and Type 1.5 migration in circumbinary disks: application to supermassive black hole binaries

    E-Print Network [OSTI]

    Bence Kocsis; Zoltan Haiman; Abraham Loeb

    2012-09-13T23:59:59.000Z

    We study the interaction of a supermassive black hole (SMBH) binary and a standard radiatively efficient thin accretion disk. We examine steady-state configurations of the disk and migrating SMBH system, self-consistently accounting for tidal and viscous torques and heating, radiative diffusion limited cooling, gas and radiation pressure, and the decay of the binary's orbit. We obtain a "phase diagram" of the system as a function of binary parameters, showing regimes in which both the disk structure and migration have a different character. Although massive binaries can create a central gap in the disk at large radii, the tidal barrier of the secondary causes a significant pile-up of gas outside of its orbit, which can lead to the closing of the gap. We find that this spillover occurs at an orbital separation as large as ~200 M_7^{-1/2} gravitational radii, where M = 10^7 M_7 Msun is the total binary mass. If the secondary is less massive than ~10^6 Msun, then the gap is closed before gravitational waves (GWs) start dominating the orbital decay. In this regime, the disk is still strongly perturbed, but the piled-up gas continuously overflows as in a porous dam, and crosses inside the secondary's orbit. The corresponding migration rate, which we label Type 1.5, is slower than the usual limiting cases known as Type I and II migration. Compared to an unperturbed disk, the steady-state disk in the overflowing regime is up to several hundred times brighter in the optical bands. Surveys such as PanSTARRS or LSST may discover the periodic variability of this population of binaries. Our results imply that the circumbinary disks around SMBHs can extend to small radii during the last stages of their merger, when they are detectable by LISA, and may produce coincident electromagnetic (EM) emission similar to active galactic nuclei (AGN).

  5. Non-Sticking of Helium Buffer Gas to Hydrocarbons

    E-Print Network [OSTI]

    Croft, James F E

    2014-01-01T23:59:59.000Z

    Lifetimes of complexes formed during helium-hydrocarbon collisions at low temperature are estimated for symmetric top hydrocarbons. The lifetimes are obtained using a density-of-states approach. In general the lifetimes are less than 10-100 ns, and are found to decrease with increasing hydrocarbon size. This suggests that clustering will not limit precision spectroscopy in helium buffer gas experiments. Lifetimes are computed for noble-gas benzene collisions and are found to be in reasonable agreement with lifetimes obtained from classical trajectories as reported by Cui {\\it et al}.

  6. Controlled Chemical Doping of Semiconductor Nanocrystals Using Redox Buffers

    SciTech Connect (OSTI)

    Engel, Jesse H.; Surendranath, Yogesh; Alivisatos, Paul

    2013-07-09T23:59:59.000Z

    Semiconductor nanocrystal solids are attractive materials for active layers in next-generation optoelectronic devices; however, their efficient implementation has been impeded by the lack of precise control over dopant concentrations. Herein we demonstrate a chemical strategy for the controlled doping of nanocrystal solids under equilibrium conditions. Exposing lead selenide nanocrystal thin films to solutions containing varying proportions of decamethylferrocene and decamethylferrocenium incrementally and reversibly increased the carrier concentration in the solid by 2 orders of magnitude from their native values. This application of redox buffers for controlled doping provides a new method for the precise control of the majority carrier concentration in porous semiconductor thin films.

  7. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOE Patents [OSTI]

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

    2009-03-31T23:59:59.000Z

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  8. Wheeler County Riparian Buffers; 2003-2004 Annual Report.

    SciTech Connect (OSTI)

    Homer, Will (Wheeler County Soil and Water Conservation District, John Day, OR)

    2006-01-01T23:59:59.000Z

    Number of Contacts Made--I have contacted 35 landowners in Wheeler County. Of the 35 contacts 12 have resulted in meeting on their property to discuss available options. Included an article in the Annual Report and Wheeler SWCD newsletter mailed to 550 landowners. Contacts are primarily through networking with others here in the office as well as working closely with the NRCS office. Number of Contracts Negotiated--This Project has produced five riparian buffers within the past contract year. Each has greater meaning to the landowner than simply a buffer. In most cases the buffer is providing the landowner with improved grazing management and/or more reliable water source for livestock. Landowners also feel the enhanced wildlife habitat is a bonus to the program. Other Accomplishments--I took part in the John Day Subbasin Planning process and was able to offer assistance into the inventory items related to Wheeler County. I was often the only local representative able to attend the meetings. I assisted the Wheeler SWCD in writing a successful OWEB grant to remove 110 acres of junipers for watershed restoration, range rehabilitation, and economic development. One partner in the project is a manufacturer that uses juniper as their primary construction material. The goal is to create a pilot project that may grow into a self sustaining industry within the county. I also assisted in writing a small grant to improve water usage in the Muddy Creek watershed. I assisted with the Pine Creek Conservation Area ''Twilight Tour'' as well as the Wheeler SWCD ''Annual Meeting and Dinner''. Both events were successful in getting information out about our riparian buffer program. Facilitate office training and utilization of advanced GIS technology and mapping. Problems Encountered During Contract Year--The NRCS Cultural Resources Review process has ground to a halt. It is takes 6 months to get initial results from the Portland offices. Nearly all requests require site surveys that delay the process even further. The Farm Services Agency is not user friendly when it comes to the CREP program. The program has not been designed to fit everyone along a steelhead stream. Crop/Field designations often negate or complicate CREP eligibility along qualifying streams. I spend a great deal of time mediating between FSA and the landowner. I have lost one interested landowner specifically to the fears related to the Oregon Department of State Lands ''Navigability'' study. Outlook for Contract Year 3--I am currently working on a project area that will encompass nearly six miles of steelhead habitat. It is located in the critical Bridge Creek watershed. Another is nearly three miles in the Mountain Creek Watershed. Both projects will take great steps in improving fish habitat. Both are on Steelhead streams. Further out I am working with two landowners for projects in the Butte Creek watershed that will be highly visible and will likely gain the attention of many more landowners. Like all previous projects, there is a great deal of work in future projects in massaging the landowner into feeling comfortable with the riparian buffer program. The potential to do great things with this program is huge in Wheeler County. Continuing outreach and education efforts will help the process.

  9. http://webhelp.esri.com/arcgisdesktop/9.3/index.cfm?id=1348&pid=1347&topicname=Buffer_(Analysis) Buffer Creates buffer polygons to a specified distance around the Input Features. An optional

    E-Print Network [OSTI]

    Brownstone, Rob

    http://webhelp.esri.com/arcgisdesktop/9.3/index.cfm?id=1348&pid=1347&topicname ­Proximity Toolset ­ Buffer #12;http://webhelp.esri.com/arcgisdesktop/9.3/index.cfm?id=1348&pid=1347

  10. Doped Y.sub.2O.sub.3 buffer layers for laminated conductors

    DOE Patents [OSTI]

    Paranthaman, Mariappan Parans (Knoxville, TN) [Knoxville, TN; Schoop, Urs (Westborough, MA) [Westborough, MA; Goyal, Amit (Knoxville, TN) [Knoxville, TN; Thieme, Cornelis Leo Hans (Westborough, MA) [Westborough, MA; Verebelyi, Darren T. (Oxford, MA) [Oxford, MA; Rupich, Martin W. (Framingham, MA) [Framingham, MA

    2007-08-21T23:59:59.000Z

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y.sub.2O.sub.3 and a dopant for blocking cation diffusion through the Y.sub.2O.sub.3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  11. Combining In-Situ Buffer-Layer-Assisted-Growth with Scanning...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Capability Development Proposals Combining In Situ Buffer-Layer-Assisted-Growth with Scanning Probe Microscopy for Formation and Study of Supported Model Catalysts Project start...

  12. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect (OSTI)

    Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

    2012-01-01T23:59:59.000Z

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  13. Cobalt disilicide buffer layer for YBCO film on silicon

    SciTech Connect (OSTI)

    Belousov, I.; Rudenko, E. [Institute for Physic Metals, Kiev (Ukraine); Linzen, S.; Seidel, P. [Friedrich-Schiller-Universitaet Jena (Germany)] [Friedrich-Shiller-Universitaet Jena (Germany)

    1997-02-01T23:59:59.000Z

    The CoSi{sub 2} films were used as buffer layers of YBCO/CoSi{sub 2}/Si(100), YBCO/ZrO{sub 2}/CoSi{sub 2}/Si(100) and YBCO/CeO{sub 2}/YSZ/CoSi{sub 2}/epi-Si/Al{sub 2}O{sub 3} heterostructures in this work. Transition temperatures of YBCO films were obtained up to 86K for YBCO films deposited by laser ablation on the top of CeO{sub 2}/YSZ/CoSi{sub 2}/Si/Al{sub 2}O{sub 3} structure. Local nucleation on the crystal defects of silicon, the phenomenon of lateral directed growth (DLG) and agglomeration of CoSi{sub 2} phase are responsible for grain boundaries (GB) position in CoSi{sub 2} layer and its roughness. The roughness was decreased using an additional Zr film on the top structure.

  14. Superconducting composite with multilayer patterns and multiple buffer layers

    DOE Patents [OSTI]

    Wu, X.D.; Muenchausen, R.E.

    1993-10-12T23:59:59.000Z

    An article of manufacture is described including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superconductor. 5 figures.

  15. Making Fast Buffer Insertion Even Faster Via Approximation Techniques , C. N. Sze1

    E-Print Network [OSTI]

    Hu, Jiang

    - ing resources while it only focuses on obtaining the optimal slack. In practice, inserting 30 buffers pre-buffer slack pruning, (2) squeeze pruning, and (3) library lookup. Experimental results from the timing target, not necessarily the optimal solution in terms of maximum slack. Lillis et al. [6

  16. BATTERY-POWERED, ELECTRIC-DRIVE VEHICLES PROVIDING BUFFER STORAGE FOR PV CAPACITY VALUE

    E-Print Network [OSTI]

    Perez, Richard R.

    BATTERY-POWERED, ELECTRIC-DRIVE VEHICLES PROVIDING BUFFER STORAGE FOR PV CAPACITY VALUE Steven, however, the use of batteries from parked electric- drive vehicles (EDV) to provide buffer storage for PV requirements that will result in a number of new battery-powered electric drive vehicles being sold beginning

  17. Path Based Buffer Insertion C. N. Sze, Charles J. Alpert, Jiang Hu and Weiping Shi

    E-Print Network [OSTI]

    Hu, Jiang

    at the same time. Experimental results show that our method can efficiently reduce buffer/gate cost, Interconnect Synthesis, Power Minimization, Global Routing, Layout, Physical Design 1. INTRODUCTION Buffer insertion is widely recognized as an essential technique for interconnect optimization [7] while

  18. Stepwise Fair-Share Buffering for Gossip-Based Peer-to-Peer Data Dissemination

    E-Print Network [OSTI]

    Caglar, Mine

    bounds for reliability of dissemination are also provided. Index Terms--Distributed systems; performance mechanism, system-wide buffer usage can be optimized while providing reliability and scalability distribution and reduces the overall buffer usage where every peer has a partial view of the system. We report

  19. Propagation of misfit dislocations from buffer/Si interface into Si

    DOE Patents [OSTI]

    Liliental-Weber, Zuzanna (El Sobrante, CA); Maltez, Rogerio Luis (Porto Alegre, BR); Morkoc, Hadis (Richmond, VA); Xie, Jinqiao (Raleigh, VA)

    2011-08-30T23:59:59.000Z

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  20. Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom

    DOE Patents [OSTI]

    Lee, Dominic F. (Knoxville, TN); Kroeger, Donald M. (Knoxville, TN); Goyal, Amit (Knoxville, TN)

    2000-01-01T23:59:59.000Z

    The present invention provides methods and biaxially textured articles having a deformed epitaxial layer formed therefrom for use with high temperature superconductors, photovoltaic, ferroelectric, or optical devices. A buffer layer is epitaxially deposited onto biaxially-textured substrates and then mechanically deformed. The deformation process minimizes or eliminates grooves, or other irregularities, formed on the buffer layer while maintaining the biaxial texture of the buffer layer. Advantageously, the biaxial texture of the buffer layer is not altered during subsequent heat treatments of the deformed buffer. The present invention provides mechanical densification procedures which can be incorporated into the processing of superconducting films through the powder deposit or precursor approaches without incurring unfavorable high-angle grain boundaries.

  1. High-quality strain-relaxed SiGe films grown with low temperature Si buffer

    SciTech Connect (OSTI)

    Luo, Y. H.; Wan, J.; Forrest, R. L.; Liu, J. L.; Goorsky, M. S.; Wang, K. L.

    2001-06-15T23:59:59.000Z

    High-quality strain-relaxed SiGe templates with a low threading dislocation density and smooth surface are critical for device performance. In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, double-axis x-ray diffraction, photoluminescence spectroscopy, and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that when using proper growth conditions for the low temperature Si buffer the Si buffer became tensily strained and gave rise to the compliant effect. The lattice mismatch between the SiGe and the Si buffer layer was reduced. A 500 nm Si{sub 0.7}Ge{sub 0.3} film with a low threading dislocation density as well as smooth surface was obtained by this method. {copyright} 2001 American Institute of Physics.

  2. Superconducting composite with multilayer patterns and multiple buffer layers

    DOE Patents [OSTI]

    Wu, Xin D. (Greenbelt, MD); Muenchausen, Ross E. (Espanola, NM)

    1993-01-01T23:59:59.000Z

    An article of manufacture including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superco n FIELD OF THE INVENTION The present invention relates to the field of superconducting articles having two distinct regions of superconductive material with differing in-plane orientations whereby the conductivity across the boundary between the two regions can be tailored. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  3. Buffer-gas cooling of ions in a multipole radio frequency trap beyond the critical mass ratio

    E-Print Network [OSTI]

    Weckesser, P; López-Carrera, H; Weidemüller, M

    2015-01-01T23:59:59.000Z

    We theoretically investigate the dynamics of a trapped ion immersed in a spatially localized buffer gas. For a homogeneous buffer gas, the ion reaches a stable equilibrium only if the mass ratio of the buffer gas atom to the ion is below a critical value. We show how this limitation can be overcome by using multipole traps and a spatially confined buffer gas. Using a generalized model for elastic collisions of the ion with the buffer gas atoms, the ion's energy distribution is derived for arbitrary buffer gas distributions and trap parameters. Three regimes characterized by the analytical form of the ion's energy distribution are found. Final ion temperatures down to the millikelvin regime can be achieved even for heavy buffer gases by actively controlling the size of the buffer gas or the trap voltage (forced sympathetic cooling).

  4. Buffer Pellets for High-Yield, Top-Seeded Melt Growth of Large Grain Y?Ba?Cu?O Superconductors

    E-Print Network [OSTI]

    Kumar, Namburi Devendra; Shi, Yunhua; Zhai, Wei; Dennis, Anthony R.; Durrell, John H.; Cardwell, David A.

    2015-01-19T23:59:59.000Z

    , which was determined by optimizing targeted critical parameters of the buffer pellet, including the choice of the buffer pellet composition and its aspect ratio, for the reliable fabrication of large, single grains of (RE)BCO. Potential candidates...

  5. Buffer architecture for biaxially textured structures and method of fabricating same

    DOE Patents [OSTI]

    Norton, David P.; Park, Chan; Goyal, Amit

    2004-04-06T23:59:59.000Z

    The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO.sub.2 and/or HfO.sub.2. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO.sub.2 and HfO.sub.2. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1.times.10.sup.-5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  6. Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates

    DOE Patents [OSTI]

    Paranthaman, Mariappan (Knoxville, TN); Goyal, Amit (Knoxville, TN); Kroeger, Donald M. (Knoxville, TN); List, III, Frederic A. (Andersonville, TN)

    2002-01-01T23:59:59.000Z

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

  7. MgO buffer layers on rolled nickel or copper as superconductor substrates

    DOE Patents [OSTI]

    Paranthaman, Mariappan (Knoxville, TN); Goyal, Amit (Knoxville, TN); Kroeger, Donald M. (Knoxville, TN); List, III, Frederic A. (Andersonville, TN)

    2001-01-01T23:59:59.000Z

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

  8. Buffer reduction in an attribute-based concurrent transaction processing system

    SciTech Connect (OSTI)

    Henschen, L.J. [Northwestern Univ., Evanston, IL (United States). Dept. of Electrical Engineering and Computer Science; Lee, J.C. [Argonne National Lab., IL (United States)

    1995-07-01T23:59:59.000Z

    The authors presented a way to improve the buffer usage for the transaction management model in an earlier study. The method presented in this paper identifies the conflicting and the non-conflicting parts of the affected data sets and separates them. The original operations are converted into two sets of operations--one set operates on disjoint data and can be executed in parallel, another set operates on conflicting data using buffers. This approach will reduce the size of the buffers used in the earlier approach.

  9. Experimental sea water buffers for use as secondary pH standards

    E-Print Network [OSTI]

    Smith, William Hamilton, Jr

    1962-01-01T23:59:59.000Z

    . 2444 absolute volts given by Bates (1954) for saturated calomel at 25oC. CHAPTER IV RESULTS AND DISCUSSION p Values of Experimental Sea Water Buffers Three separate measurements at var'ious temperatures were made as follows: 1. The Gray... electrode is the primary pHs phosphate buffer proposed by Bower, Paabo, and Bates (1961) with pHs values established to 0. 001 pH units. This buffer consists of 1. 179 gms KH2P04 and 4. 303 gms of Na2HP04 per liter of dis- tilled water. This is for a...

  10. Minimum-Buffered Routing of Non-Critical Nets for Slew Rate and Reliability Control

    E-Print Network [OSTI]

    Liu, Bao

    breakdown and AC self-heating in interconnects, and guarantees bounded input rise/fall times at buffers] and AC self-heating in intercon- nects [20], and facilitate technology migration since designs are more

  11. Minimum Buffered Routing with Bounded Capacitive Load for Slew Rate and Reliability Control

    E-Print Network [OSTI]

    Mandoiu, Ion

    breakdown and AC self-heating in interconnects, and guarantees bounded input rise/fall times at buffers electrons) [10], [12] and AC self-heating in interconnects [20], and facilitate technology migration since

  12. A multilevel energy buffer and voltage modulator for grid-interfaced micro-inverters

    E-Print Network [OSTI]

    Chen, Minjie

    Micro-inverters operating into the single-phase grid from solar photovoltaic (PV) panels or other low-voltage sources must buffer the twice-line-frequency variations between the energy sourced by the PV panel and that ...

  13. Potential for N pollution swapping from riparian buffer strips and an instream wetland 

    E-Print Network [OSTI]

    Boukelia, Willena Esther

    2012-11-29T23:59:59.000Z

    Diffuse agricultural pollution is a major contributor to poor water quality in many parts of the world. Consequently agri-environment policy promotes the use of riparian buffer strips and/or denitrifying wetlands to ...

  14. Successive structuring of source coding algorithms for data fusion, buffering, and distribution in networks

    E-Print Network [OSTI]

    Draper, Stark Christiaan.

    2002-01-01T23:59:59.000Z

    (cont.) We also explore the interactions between source coding and queue management in problems of buffering and distributing distortion-tolerant data. We formulate a general queuing model relevant to numerous communication ...

  15. Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

    E-Print Network [OSTI]

    Isaacson, David M.

    We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle ...

  16. Effect of buffer layer growth temperature on epitaxial GaN films deposited by magnetron sputtering

    SciTech Connect (OSTI)

    Mohanta, P.; Singh, D.; Kumar, R.; Ganguli, T.; Srinivasa, R. S.; Major, S. S. [Center For Research in Nano-Technology and Science (India); Semiconductor Laser Section, RRCAT, Indore-452013 (India); Department of Metallurgical Engineering and Materials Science (India); Department of Physics, Indian Institute of Technology Bombay, Mumbai - 400076 (India)

    2012-06-05T23:59:59.000Z

    Epitaxial GaN films were deposited by reactive sputtering of a GaAs target in 100 % nitrogen at 700 deg. C on ZnO buffer layers grown at different substrate temperatures over sapphire substrates. High resolution X-ray diffraction measurements and the corresponding analysis show that the growth temperature of buffer layers significantly affects the micro-structural parameters of GaN epilayer, such as lateral coherence length, tilt and twist, while the vertical coherence length remains unaffected. The optimum substrate temperature for buffer layer growth has been found to be 300 deg. C. High epitaxial quality GaN film grown on such a buffer layer exhibited micro strain of 1.8x10{sup -4} along with screw and edge type dislocation densities of 7.87x10{sup 9} and 1.16x10{sup 11}, respectively.

  17. A Multilevel Energy Buffer and Voltage Modulator for Grid-Interfaced Microinverters

    E-Print Network [OSTI]

    Chen, Minjie

    Microinverters operating into the single-phase grid from solar photovoltaic (PV) panels or other low-voltage sources must buffer the twice-line-frequency variations between the energy sourced by the PV panel and that ...

  18. The buffer management scheme for the new Triumf VAX-based data acquisition and analysis system

    SciTech Connect (OSTI)

    Ludgate, G.A.; Haley, B.; Lee, L.

    1987-08-01T23:59:59.000Z

    The new TRIUMF VAX-based DAAS requires data to be exchanged between acquisition, monitoring and analysis processes executing on a VAX. Data records are passed via a set of buffers contained in a region of memory shared by all processes. The responsibility for buffer management is distributed among the processes and synchronized access to the region is achieved by using the VAX self-relative queue instructions and common event flags.

  19. Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

    DOE Patents [OSTI]

    Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

    2005-10-18T23:59:59.000Z

    An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  20. Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

    DOE Patents [OSTI]

    Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

    2003-09-09T23:59:59.000Z

    An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  1. Riparian Buffer Project : Annual Report for the Period April 1, 2001 to March 31, 2002.

    SciTech Connect (OSTI)

    Wasco County Soil and Water Conservation District

    2002-01-01T23:59:59.000Z

    This project implements riparian buffer systems in the Mid-Columbia, addressing limiting factors identified in the Fifteen mile Subbasin Summary, June 30, 2000. The project is providing the technical planning support needed to implement at least 36 riparian buffer system contracts on approximately 872 acres covering an estimated 40 miles of anadromous fish streams over a three year period. In the first year of implementation, 26 buffer contracts were established on 25-26 miles of stream. This nearly doubled the annual goal. Buffer widths averaged 83 ft. on each side of the stream. Implementation included prescribed plantings, fencing, and related practices. Actual implementation costs, lease payments, and maintenance costs are borne by existing USDA programs: Conservation Reserve and Conservation Reserve Enhancement Programs. The lease period of each contract may vary between 10 to 15 years. During this year the average was 14.5 years. The total value of contracts established this year is $1,491,235 compared with $64,756 in BPA contract costs to provide the technical support needed to get the contracts implemented. This project provides technical staffing to conduct assessments and develop plans to help keep pace with the growing backlog of potential riparian buffer projects. Word of mouth from satisfied customers has brought in many new sign-ups during the year. More than half of the contracts this year have been done in the Hood and Fifteen mile sub-basins with additional contracts in adjacent sub-basins.

  2. Optically pumped alkali laser and amplifier using helium-3 buffer gas

    DOE Patents [OSTI]

    Beach, Raymond J. (Livermore, CA); Page, Ralph (Castro Valley, CA); Soules, Thomas (Livermore, CA); Stappaerts, Eddy (San Ramon, CA); Wu, Sheldon Shao Quan (Livermore, CA)

    2010-09-28T23:59:59.000Z

    In one embodiment, a laser oscillator is provided comprising an optical cavity, the optical cavity including a gain medium including an alkali vapor and a buffer gas, the buffer gas including .sup.3He gas, wherein if .sup.4He gas is also present in the buffer gas, the ratio of the concentration of the .sup.3He gas to the .sup.4He gas is greater than 1.37.times.10.sup.-6. Additionally, an optical excitation source is provided. Furthermore, the laser oscillator is capable of outputting radiation at a first frequency. In another embodiment, an apparatus is provided comprising a gain medium including an alkali vapor and a buffer gas including .sup.3He gas, wherein if .sup.4He gas is also present in the buffer gas, the ratio of the concentration of the .sup.3He gas to the .sup.4He gas is greater than 1.37.times.10.sup.-6. Other embodiments are also disclosed.

  3. Electron dynamics of the buffer layer and bilayer graphene on SiC

    SciTech Connect (OSTI)

    Shearer, Alex J.; Caplins, Benjamin W.; Suich, David E.; Harris, Charles B., E-mail: cbharris@berkeley.edu [Department of Chemistry, University of California at Berkeley, Berkeley, California 94720 (United States); Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Johns, James E. [Department of Chemistry, University of Minnesota Twin Cities, Minneapolis, Minnesota 55455 (United States); Hersam, Mark C. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-06-09T23:59:59.000Z

    Angle- and time-resolved two-photon photoemission (TPPE) was used to investigate electronic states in the buffer layer of 4H-SiC(0001). An image potential state (IPS) series was observed on this strongly surface-bound buffer layer, and dispersion measurements indicated free-electron-like behavior for all states in this series. These results were compared with TPPE taken on bilayer graphene, which also show the existence of a free-electron-like IPS series. Lifetimes for the n?=?2, and n?=?3 states were obtained from time-resolved TPPE; slightly increased lifetimes were observed in the bilayer graphene sample for the n?=?2 the n?=?3 states. Despite the large band gap of graphene at the center of the Brillouin zone, the lifetime results demonstrate that the graphene layers do not behave as a simple tunneling barrier, suggesting that the buffer layer and graphene overlayers play a direct role in the decay of IPS electrons.

  4. Buffer layers for narrow bandgap a-SiGe solar cells

    SciTech Connect (OSTI)

    Liao, X.B.; Walker, J.; Deng, X.

    1999-07-01T23:59:59.000Z

    In high efficiency narrow bandgap (NBG) a-SiGe solar cells, thin buffer layers of unalloyed hydrogenated amorphous silicon (a-Si) are usually used at the interfaces between the a-SiGe intrinsic layer and the doped layers. They investigated the effect of inserting additional a-SiGe interface layers between these a-Si buffer layers and the a-SiGe absorber layer. They found that such additional interface layers increase solar cell V{sub oc} and FF sizably, most likely due to the reduction or elimination of the abrupt bandgap discontinuity between the a-SiGe absorber layer and the a-Si buffer layers. With these improved narrow bandgap solar cells incorporated into the fabrication of triple-junction a-Si based solar cells, they obtained triple cells with initial efficiency of 10.6%.

  5. Poly(vinyl alcohol)-based buffering membranes for isoelectric trapping separations

    E-Print Network [OSTI]

    Craver, Helen C.

    2009-05-15T23:59:59.000Z

    ?.????????????.?. 149 A-3 Excel spreadsheet used to calculate the recipes for the MORPH-ASP-PVA membranes buffering on the lower pK a in the MORPH-ASP mixture?.???????????????.?. 150 A-4 Excel spreadsheet used to calculate the recipes for the MORPH...-ASP-PVA membranes buffering on the higher pK a in the MORPH-ASP mixture ?.????????????????. 151 A-5 Excel spreadsheet used to calculate the recipes for the TRIS-ASP-PVA membranes?.????????????.?. 152 A-6 Excel spreadsheet used to calculate...

  6. Associating Physical and Chemical Properties to Evaluate Buffer Materials by Th and U Sorption

    SciTech Connect (OSTI)

    Jan, Yi-Lin; Chen, Tzu-Yun; Cheng, Hwai-Ping; Hsu, Chun-Nan; Tseng, Chia-Liang; Wei,Yuan-Yaw; Yang, Jen-Yan; Ke, Cheng-Hsiung; Chuang, Jui-Tang; Teng, Shi-Ping

    2003-02-27T23:59:59.000Z

    The physical and chemical properties of buffer materials to be used for a radwaste disposal repository should be evaluated prior to use. In a conventional approach, independent studies of physical and/or chemical characteristics are conducted. This study investigated the relationship between the plastic index (PI) and distribution ratio (Rd) of buffer materials composed of varying ratios of quartz sand and bentonite. Thorium (Th) and Uranium (U) were the nuclides of interest, and both synthetic groundwater and seawater were used as the liquid phases to simulate conditions representative of deep geological disposal within an island. Atterberg tests were used to determine PI values, and batch sorption experiments were employed to measure Rd values. The results show that Th reached maximum sorption behavior when the bentonite content exceeded 30 % of the mixture. Contrariwise, the sorption of U increased linearly with bentonite content, up to bentonite contents of 100%, and this correlation was present regardless of the liquid phase used. A further result is that U has a better additivity with respect to Rd than Th in both synthetic groundwater and synthetic seawater. These results will allow a determination of more effective buffer material composition, and improved estimates of the overall Rd of the buffer material mixture from the Rd of each mineral component.

  7. Improving Data Access Efficiency by Using a Tagless Access Buffer (TAB)

    E-Print Network [OSTI]

    Whalley, David

    of the processor's energy expenditure. We describe the implemen- tation and use of a tagless access buffer (TAB University of Technology [perla/mckee/pers]@chalmers.se Abstract The need for energy efficiency continues) that greatly improves data access energy efficiency while slightly im- proving performance. The compiler

  8. Thus, rarer species may be more buffered from extinction than expected from neutral sampling

    E-Print Network [OSTI]

    Tong, Liang

    Thus, rarer species may be more buffered from extinction than expected from neutral sampling effects. However, time-lagged extinctions due to extinction debt may lead to additional species loss (31 species abundances, at least until future extinction debt is paid. References and Notes 1. M. Gaertner, A

  9. Relations of Buffer Capacity for Acids to Basicity and Exchangeable Bases of the Soil.

    E-Print Network [OSTI]

    Fraps, G. S. (George Stronach); Fudge, J. F.

    1932-01-01T23:59:59.000Z

    -(continued). ...................... i Point Isabel fine sandy loam Laboratory Number ......................................... / Potter clay loam ( Carbonates as Calcium Total buffer capacity Soil type 4.0 6.0 / P0;.8H 1 por pH j Catalpa clay... ....................................................... / I Miller clay loam ............................................... Frio silt loam .................................................. Hidalgo clay loam ........................................... I I I I I...

  10. Preparation of CIGS-based solar cells using a buffered electrodeposition bath

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath (Littleton, CO)

    2007-11-20T23:59:59.000Z

    A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

  11. Designing a Residential Hybrid Electrical Energy Storage System Based on the Energy Buffering Strategy

    E-Print Network [OSTI]

    Pedram, Massoud

    such as the Consolidated Edison Company of New York (conEdison) employ time-of-day pricing policy [2], with higher unitDesigning a Residential Hybrid Electrical Energy Storage System Based on the Energy Buffering companies generally raise electrical energy price during periods of high load demand. A grid

  12. Enhanced dielectric properties from barium strontium titanate films with strontium titanate buffer layers

    E-Print Network [OSTI]

    Alpay, S. Pamir

    . Zhang,3 and S. P. Alpay3 1 U. S. Army Research Laboratory, Weapons and Materials Research Directorate film overgrowth was developed using affordable industry standard processes and materials. The effect major factors: (i) the template-effect of the thin STO buffer layer on the thicker Mg-BST over

  13. ccsd-00001676,version1-16Jun2004 Epitaxy and growth of titanium buffer layers

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    ccsd-00001676,version1-16Jun2004 Epitaxy and growth of titanium buffer layers on Al2O3(0001) E Paris, France Abstract The structure and growth of thin films of titanium on -Al2O3 at room temperature of the phase of titanium reported before for thick films prepared at high temperature. The other structure can

  14. Analysis of Power-Aware Buffering Schemes in Wireless Sensor Networks

    E-Print Network [OSTI]

    Chen, Shigang

    problem in battery-powered sensor networks, focusing on the fixed-size and fixed-interval buffering parameters of radio module and memory bank, data arrival rate, and data-size variation, thereby providing operational requirement of battery-powered sensor networks [

  15. CALCULATIONS OF TRITIUM FLOW BETWEEN THE BUFFER VESSEL UP TO THE FIRST VACUUM SYSTEM

    E-Print Network [OSTI]

    Sharipov, Felix

    CALCULATIONS OF TRITIUM FLOW BETWEEN THE BUFFER VESSEL UP TO THE FIRST VACUUM SYSTEM Felix Sharipov diff., Eq.(32) µ viscosity of tritium Pa s 1 Introduction The present work is a continuation of the previous report [1], where the preliminary results were obtained for the tritium flow through the source

  16. Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientation

    E-Print Network [OSTI]

    Allen, Leslie H.

    Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientation G. L and Nomarski microscopy. In n-type modulation-doped Si-SiGe structures, the band structure is type II where SiGe layer, generally on top of the strained Si, is intentionally doped leaving the adjacent Si layer

  17. GLOBAL CHANGE ECOLOGY -ORIGINAL PAPER Buffered climate change effects in a Mediterranean pine species

    E-Print Network [OSTI]

    Herrera, Carlos M.

    GLOBAL CHANGE ECOLOGY - ORIGINAL PAPER Buffered climate change effects in a Mediterranean pine Abstract Within-range effects of climatic change on tree growth at the sub-regional scale remain poorly- growth responses to climate change, the role of drought becomes even more complex in shaping communities

  18. Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

    SciTech Connect (OSTI)

    Uren, Michael J.; Cäsar, Markus; Kuball, Martin [Center for Device Thermography and Reliability, H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Gajda, Mark A. [NXP Semiconductors, Bramhall Moor Lane, Hazel Grove, Stockport SK7 5BJ (United Kingdom)

    2014-06-30T23:59:59.000Z

    Temperature dependent pulsed and ramped substrate bias measurements are used to develop a detailed understanding of the vertical carrier transport in the buffer layers in a carbon doped GaN power heterojunction field effect transistor. Carbon doped GaN and multiple layers of AlGaN alloy are used in these devices to deliver an insulating and strain relieved buffer with high breakdown voltage capability. However, understanding of the detailed physical mechanism for its operation is still lacking. At the lowest electric fields (<10 MV/m), charge redistribution within the C doped layer is shown to occur by hole conduction in the valence band with activation energy 0.86?eV. At higher fields, leakage between the two-dimensional electron gas and the buffer dominates occurring by a Poole-Frenkel mechanism with activation energy ?0.65?eV, presumably along threading dislocations. At higher fields still, the strain relief buffer starts to conduct by a field dependent process. Balancing the onset of these leakage mechanisms is essential to allow the build-up of positive rather than negative space charge, and thus minimize bulk-related current-collapse in these devices.

  19. Scheduling in Switches with Small Internal Buffers Nikos Chrysos and Manolis Katevenis

    E-Print Network [OSTI]

    Katevenis, Manolis G.H.

    . INTRODUCTION Packet networks require low-cost and fast packet switches to keep pace with the increase of today belong to the former category, but the trend is towards buffered fabrics that exploit advances://archvlsi.ics.forth.gr/bpbenes/ Draft version of 22 July 2005 Abstract-- Unbuffered crossbars or switching fabrics contain no internal

  20. Congestion Avoidance based on Light-Weight Buffer Management in Sensor Networks

    E-Print Network [OSTI]

    Chen, Shigang

    , congestion may occur as data packets converge toward a sink. Congestion causes energy waste, throughput1 Congestion Avoidance based on Light-Weight Buffer Management in Sensor Networks Shigang Chen, and above all, energy supply. When a critical event triggers a surge of data generated by the sensors

  1. Parvalbumin 3 is an Abundant Ca2+ Buffer in Hair Cells

    E-Print Network [OSTI]

    Hudspeth, A. James

    Parvalbumin 3 is an Abundant Ca2+ Buffer in Hair Cells STEFAN HELLER,* ANDREA M. BELL, CHARLOTTE S parts of a hair cell. The Ca2+ concentration in ste- reocilia regulates adaptation and, through rapid saccular and chicken cochlear hair cells. We cloned cDNAs en- coding this protein from the corresponding

  2. Abstract -A current-mode logic (CML) buffer is based on a simple differential circuit. This paper investigates important

    E-Print Network [OSTI]

    Heydari, Payam

    Abstract - A current-mode logic (CML) buffer is based on a simple differential circuit. This paper-ended circuit. Recall that in multi-gigahertz frequency range, the short on-chip wires act as coupled will severely limit the maximum operating frequency of the circuit [1] [2]. CMOS current-mode logic buffers were

  3. NO and NO-independent mechanisms mediate ETB receptor buffering of ET-1-induced renal vasoconstriction in the rat

    E-Print Network [OSTI]

    Just, Armin

    NO and NO-independent mechanisms mediate ETB receptor buffering of ET-1-induced renal. Falck, and William J. Arendshorst. NO and NO-independent mechanisms mediate ETB receptor buffering of ET) type B (ETB) receptors exert dilator and constrictor actions in a complex interaction with ETA

  4. Evaluating resilience of DNP3-controlled SCADA systems against event buffer flooding

    SciTech Connect (OSTI)

    Yan, Guanhua [Los Alamos National Laboratory; Nicol, David M [UNIV OF IL; Jin, Dong [UNIV OF IL

    2010-12-16T23:59:59.000Z

    The DNP3 protocol is widely used in SCADA systems (particularly electrical power) as a means of communicating observed sensor state information back to a control center. Typical architectures using DNP3 have a two level hierarchy, where a specialized data aggregator device receives observed state from devices within a local region, and the control center collects the aggregated state from the data aggregator. The DNP3 communication between control center and data aggregator is asynchronous with the DNP3 communication between data aggregator and relays; this leads to the possibility of completely filling a data aggregator's buffer of pending events, when a relay is compromised or spoofed and sends overly many (false) events to the data aggregator. This paper investigates how a real-world SCADA device responds to event buffer flooding. A Discrete-Time Markov Chain (DTMC) model is developed for understanding this. The DTMC model is validated by a Moebius simulation model and data collected on real SCADA testbed.

  5. Realization of Coherent Optically Dense Media via Buffer-Gas Cooling

    E-Print Network [OSTI]

    Tao Hong; Alexey V. Gorshkov; David Patterson; Alexander S. Zibrov; John M. Doyle; Mikhail D. Lukin; Mara G. Prentiss

    2009-02-02T23:59:59.000Z

    We demonstrate that buffer-gas cooling combined with laser ablation can be used to create coherent optical media with high optical depth and low Doppler broadening that offers metastable states with low collisional and motional decoherence. Demonstration of this generic technique opens pathways to coherent optics with a large variety of atoms and molecules. We use helium buffer gas to cool 87Rb atoms to below 7 K and slow atom diffusion to the walls. Electromagnetically induced transparency (EIT) in this medium allows for 50% transmission in a medium with initial OD >70 and for slow pulse propagation with large delay-bandwidth products. In the high-OD regime, we observe high-contrast spectrum oscillations due to efficient four-wave mixing.

  6. An ultra-thin buffer layer for Ge epitaxial layers on Si

    SciTech Connect (OSTI)

    Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)] [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Sawano, K. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)] [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)

    2013-03-25T23:59:59.000Z

    Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

  7. BurstMem: A High-Performance Burst Buffer System for Scientific Applications

    SciTech Connect (OSTI)

    Wang, Teng [Auburn University, Auburn, Alabama; Oral, H Sarp [ORNL; Wang, Yandong [Auburn University, Auburn, Alabama; Settlemyer, Bradley W [ORNL; Atchley, Scott [ORNL; Yu, Weikuan [Auburn University, Auburn, Alabama

    2014-01-01T23:59:59.000Z

    The growth of computing power on large-scale sys- tems requires commensurate high-bandwidth I/O system. Many parallel file systems are designed to provide fast sustainable I/O in response to applications soaring requirements. To meet this need, a novel system is imperative to temporarily buffer the bursty I/O and gradually flush datasets to long-term parallel file systems. In this paper, we introduce the design of BurstMem, a high- performance burst buffer system. BurstMem provides a storage framework with efficient storage and communication manage- ment strategies. Our experiments demonstrate that BurstMem is able to speed up the I/O performance of scientific applications by up to 8.5 on leadership computer systems.

  8. 1346 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, VOL. 26, NO. 7, JULY 2007 Path-Based Buffer Insertion

    E-Print Network [OSTI]

    Hu, Jiang

    reduce buffer/gate cost sig- nificantly (by 71% on average) when compared to traditional net is widely recognized as an essential technique for interconnect optimization [1] while interconnect solution optimally in quadratic time. This algorithm is extended to handle buffer cost and buffer library

  9. Corrosion in low dielectric constant Si-O based thin films: Buffer concentration effects

    SciTech Connect (OSTI)

    Zeng, F. W.; Lane, M. W., E-mail: mlane@ehc.edu [Department of Chemistry, Emory and Henry College, Emory, Virginia 24340 (United States); Gates, S. M. [IBM TJ Watson Research Center, Yorktown Heights, New York 10598 (United States)] [IBM TJ Watson Research Center, Yorktown Heights, New York 10598 (United States)

    2014-05-15T23:59:59.000Z

    Organosilicate glass (OSG) is often used as an interlayer dielectric (ILD) in high performance integrated circuits. OSG is a brittle material and prone to stress-corrosion cracking reminiscent of that observed in bulk glasses. Of particular concern are chemical-mechanical planarization techniques and wet cleans involving solvents commonly encountered in microelectronics fabrication where the organosilicate film is exposed to aqueous environments. Previous work has focused on the effect of pH, surfactant, and peroxide concentration on the subcritical crack growth of these films. However, little or no attention has focused on the effect of the conjugate acid/base concentration in a buffer. Accordingly, this work examines the “strength” of the buffer solution in both acidic and basic environments. The concentration of the buffer components is varied keeping the ratio of acid/base and therefore pH constant. In addition, the pH was varied by altering the acid/base ratio to ascertain any additional effect of pH. Corrosion tests were conducted with double-cantilever beam fracture mechanics specimens and fracture paths were verified with ATR-FTIR. Shifts in the threshold fracture energy, the lowest energy required for bond rupture in the given environment, G{sub TH}, were found to shift to lower values as the concentration of the base in the buffer increased. This effect was found to be much larger than the effect of the hydroxide ion concentration in unbuffered solutions. The results are rationalized in terms of the salient chemical bond breaking process occurring at the crack tip and modeled in terms of the chemical potential of the reactive species.

  10. MOD Buffer/YBCO Approach to Fabricate Low-Cost Second Generation HTS Wires

    SciTech Connect (OSTI)

    Paranthaman, Mariappan Parans [ORNL; Sathyamurthy, Srivatsan [ORNL; Bhuiyan, Md S [ORNL; Martin, Patrick M [ORNL; Aytug, Tolga [ORNL; Kim, Kyunghoon [ORNL; Fayek, Mostafa [ORNL; Leonard, Keith J [ORNL; Li, Jing [ORNL; Zhang, W. [American Superconductor Corporation, Westborough, MA; Rupich, Marty [American Superconductor Corporation, Westborough, MA

    2007-01-01T23:59:59.000Z

    The metal organic deposition (MOD) of buffer layers on RABiTS substrates is considered a potential, low-cost approach to manufacturing high performance Second Generation (2G) high temperature superconducting (HTS) wires. The typical architecture used by American Superconductor in their 2G HTS wire consists of a Ni-W (5 at.%) substrate with a reactively sputtered Y2O3 seed layer, YSZ barrier layer and a CeO2 cap layer. This architecture supports critical currents of over 300 A/cm-width (77 K, self-field) with 0.8 mum YBCO films deposited by the TFA-MOD process. The main challenge in the development of the MOD buffers is to match or exceed the performance of the standard vacuum deposited buffer architecture. We have recently shown that the texture and properties of MOD - La2Zr2Ogamma (LZO) barrier layers can be improved by inserting a thin sputtered Y2O3 seed layer and prepared MOD deposited LZO layers followed by MOD or RF sputtered CeO2 cap layers that support MOD-YBCO films with Ic's of 200 and 255 A/cm-width, respectively. Detailed X-ray and microstructural characterizations indicated that MOD - CeO2 cap reacted completely with MOD YBCO to form BaCeOs. However, sputtered CeO2 cap/MOD YBCO interface remains clean. By further optimizing the coating conditions and reducing the heat-treatment temperatures, we have demonstrated an Ic of 336 A/cm with improved LZO layers and sputtered CeO2 cap and exceeded the performance of that of standard vacuum deposited buffers.

  11. ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO)

    2009-11-03T23:59:59.000Z

    The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

  12. Photovoltaic devices comprising zinc stannate buffer layer and method for making

    DOE Patents [OSTI]

    Wu, Xuanzhi (Golden, CO); Sheldon, Peter (Lakewood, CO); Coutts, Timothy J. (Lakewood, CO)

    2001-01-01T23:59:59.000Z

    A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

  13. Hafnium nitride buffer layers for growth of GaN on silicon

    DOE Patents [OSTI]

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16T23:59:59.000Z

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  14. A New Optical Switching Fabric Architecture Incorporating Rapidly Switching All-Optical Variable Delay Buffers

    E-Print Network [OSTI]

    Kolner, Brian H.

    - optical random access memory. While the theoretical and experimental work for the optical-label switching of the output delay buffer. Electronic On-Off Logic 2^(N-1)T 2^(N-2)T T Electronic On-Off Logic 2^(N-1)T 2^(N-2)T T ? i Electronic On-Off Logic 2^(N-1)T 2^(N-2)T T Electronic On-Off Logic 2^(N-1)T 2^(N-2)T T ? i

  15. Buffering blood pressure fluctuations by respiratory sinus arrhythmia may in fact enhance them: a theoretical analysis

    E-Print Network [OSTI]

    Teodor Buchner; Jan ?ebrowski; Grzegorz Gielerak

    2010-07-13T23:59:59.000Z

    Using a three-compartment model of blood pressure dynamics, we analyze theoretically the short term cardiovascular variability: how the respiratory-related blood pressure fluctuations are buffered by appropriate heart rate changes: i.e. the respiratory sinus arrhythmia. The buffering is shown to be crucially dependent on the time delay between the stimulus (such as e.g. the inspiration onset) and the application of the control (the moment in time when the efferent response is delivered to the heart). This theoretical analysis shows that the buffering mechanism is effective only in the upright position of the body. It explains a paradoxical effect of enhancement of the blood pressure fluctuations by an ineffective control. Such a phenomenon was observed experimentally. Using the basis of the model, we discuss the blood pressure variability and heart rate variability under such clinical conditions as the states of expressed adrenergic drive and the tilt-test during the parasympathetic blockade or fixed rate atrial pacing. From the results of the variability analysis we draw a conclusion that the control of blood pressure in the HF band does not directly obtain the arterial baroreceptor input. We also discuss methodological issues of baroreflex sensitivity and sympathovagal balance assessment.

  16. U-178: VMware vMA Library Loading Error Lets Local Users Gain...

    Broader source: Energy.gov (indexed) [DOE]

    Buffer Overflow and Null Pointer Dereference Lets Local Users Gain Elevated Privileges U-094: EMC Documentum Content Server Lets Local Administrative Users Gain Elevated Privileges...

  17. Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

    E-Print Network [OSTI]

    Heo, Jaeyeong

    We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, ...

  18. Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates

    E-Print Network [OSTI]

    .1063/1.4804264 Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation J

  19. Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer

    E-Print Network [OSTI]

    Ozbay, Ekmel

    N buffer layer BL grown on an Al2O3 substrate and an AlN IL grown under the AlGaN ternary layer TL. In the present study, we investigate the effects of an AlN BL on an Al2O3 substrate and an AlN IL between an AlGaNStructural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer

  20. Buffered Phenol Why buffer phenol?

    E-Print Network [OSTI]

    Aris, John P.

    . Pour phenol into Pyrex glass bottle with orange cap. Top off with 10 ml TE (pH 8) plus 0.1% (vol/vol) ß ACS grade or better). Use glass cylinder. Place in Pyrex bottle with orange cap. Cover with TE. Store and interfere with cloning! Liquefied Phenol: 1. Start with a 500 g bottle of ultrapure phenol. Cover phenol

  1. Using Whole-House Field Tests to Empirically Derive Moisture Buffering Model Inputs

    SciTech Connect (OSTI)

    Woods, J.; Winkler, J.; Christensen, D.; Hancock, E.

    2014-08-01T23:59:59.000Z

    Building energy simulations can be used to predict a building's interior conditions, along with the energy use associated with keeping these conditions comfortable. These models simulate the loads on the building (e.g., internal gains, envelope heat transfer), determine the operation of the space conditioning equipment, and then calculate the building's temperature and humidity throughout the year. The indoor temperature and humidity are affected not only by the loads and the space conditioning equipment, but also by the capacitance of the building materials, which buffer changes in temperature and humidity. This research developed an empirical method to extract whole-house model inputs for use with a more accurate moisture capacitance model (the effective moisture penetration depth model). The experimental approach was to subject the materials in the house to a square-wave relative humidity profile, measure all of the moisture transfer terms (e.g., infiltration, air conditioner condensate) and calculate the only unmeasured term: the moisture absorption into the materials. After validating the method with laboratory measurements, we performed the tests in a field house. A least-squares fit of an analytical solution to the measured moisture absorption curves was used to determine the three independent model parameters representing the moisture buffering potential of this house and its furnishings. Follow on tests with realistic latent and sensible loads showed good agreement with the derived parameters, especially compared to the commonly-used effective capacitance approach. These results show that the EMPD model, once the inputs are known, is an accurate moisture buffering model.

  2. High speed, very large (8 megabyte) first in/first out buffer memory (FIFO)

    DOE Patents [OSTI]

    Baumbaugh, Alan E. (Batavia, IL); Knickerbocker, Kelly L. (Aurora, IL)

    1989-01-01T23:59:59.000Z

    A fast FIFO (First In First Out) memory buffer capable of storing data at rates of 100 megabytes per second. The invention includes a data packer which concatenates small bit data words into large bit data words, a memory array having individual data storage addresses adapted to store the large bit data words, a data unpacker into which large bit data words from the array can be read and reconstructed into small bit data words, and a controller to control and keep track of the individual data storage addresses in the memory array into which data from the packer is being written and data to the unpacker is being read.

  3. Buffer layers on metal surfaces having biaxial texture as superconductor substrates

    DOE Patents [OSTI]

    Paranthaman, Mariappan (Knoxville, TN); Lee, Dominic F. (Knoxville, TN); Kroeger, Donald M. (Knoxville, TN); Goyal, Amit (Knoxville, TN)

    2000-01-01T23:59:59.000Z

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /Ni, (RE=Rare Earth), RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /CeO.sub.2 /Ni, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /CeO.sub.2 /Cu, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approaches, which include chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

  4. DEVELOPMENT OF IN-SITU CONTROL DIAGNOSTICS FOR APPLICATION OF EPITAXIAL SUPERCONDUCTOR AND BUFFER LAYERS

    SciTech Connect (OSTI)

    B.C. Winkleman; T.V. Giel, Jr.; J. Cunningham

    1999-06-30T23:59:59.000Z

    The recent achievements of critical currents in excess of 1x10{sup 6}amp/cm{sup 2} at 77K in YBCO deposited over suitably textured buffer/substrate composites have stimulated interest in the potential fabrication of these coated conductors as wire. Numerous approaches and manufacturing schemes for producing coated conductor wire are currently being developed. Recently, under the U. S. Department of Energy (DOE's) sponsorship, the University of Tennessee Space Institute (UTSI) performed an extensive evaluation of leading coated conductor processing options. In general, it is our feeling that the science and chemistry that are being developed in the coated conductor wire program now need proper engineering evaluation to define the most viable options for a commercial fabrication process. All fabrication processes will need process control measurements. This report provides a specific review of the needs and available technologies for process control for many of the coated conductor processing options. This report also addresses generic process monitoring areas in which additional research and development is needed. The concentration is on the two different approaches for obtaining the textured substrates that have been identified as viable candidates. These are the Los Alamos National Laboratory's (LANL) ion-beam assisted deposition, called IBAD, to obtain a highly textured yttria-stabilized zirconia (YSZ) buffer on nickel alloy strips, and Oak Ridge National Laboratory's (ORNL) rolling assisted, bi-axially textured substrate option called RABiTS{trademark}.

  5. Development of in-situ control diagnostics for application of epitaxial superconductor and buffer layers

    SciTech Connect (OSTI)

    B.C. Winkleman; T.V. Giel; Jason Cunningham

    1999-07-30T23:59:59.000Z

    The recent achievements of critical currents in excess of 1 x 10{sup 6} amp/cm{sup 2} at 77 K in YBCO deposited over suitably textured buffer/substrate composites have stimulated interest in the potential fabrication of these coated conductors as wire. Numerous approaches and manufacturing schemes for producing coated conductor wire are currently being developed. Recently, under the US DOE's sponsorship, the University of Tennessee Space Institute performed an extensive evaluation of leading coated conductor processing options. In general, it is their feeling that the science and chemistry that are being developed in the coated conductor wire program now need proper engineering evaluation to define the most viable options for a commercial fabrication process. All fabrication processes will need process control measurements. This report provides a specific review of the needs and available technologies for process control for many of the coated conductor processing options. This report also addresses generic process monitoring areas in which additional research and development is needed. The concentration is on the two different approaches for obtaining the textured substrates that have been identified as viable candidates. These are the Los Alamos National Laboratory's ion-beam assisted deposition, called IBAD, to obtain a highly textured yttria-stabilized zirconia (YSZ) buffer on nickel alloy strips, and Oak Ridge National Laboratory's rolling assisted, bi-axially textured substrate option called RABiTS{trademark}.

  6. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S., E-mail: scorekci@kirklareli.edu.tr [K Latin-Small-Letter-Dotless-I rklareli University, Department of Physics (Turkey); Oeztuerk, M. K. [Gazi University, Department of Physics (Turkey); Yu, Hongbo [Bilkent University, Nanotechnology Research Center (Turkey); Cakmak, M.; Oezcelik, S. [Gazi University, Department of Physics (Turkey); Oezbay, E. [Bilkent University, Nanotechnology Research Center, Department of Physics, Department of Electrical and Electronics Engineering (Turkey)

    2013-06-15T23:59:59.000Z

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  7. Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films

    DOE Patents [OSTI]

    Hankins, Matthew G. (Albuquerque, NM)

    2009-10-06T23:59:59.000Z

    Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

  8. A new buffer system for the potentiometric determination of fluoride ion

    SciTech Connect (OSTI)

    Zhobinskii, E.Y.; Askochenskaya, R.M.; Novikova, L.B; Wl' Figarov, O.S.

    1985-05-01T23:59:59.000Z

    This paper attempts to eliminate the lengthy stage of hydrolytic separation of the elements during the potentiometric determination of fluoride ions and also to develop a universal method for the determination of flouride ions. During the development of a procedure for the determination of fluoride ions it is necessary to eliminate the interfering effects of elements which form stable fluoride complexes such as A1 (III), Fe (III), Si (III), Ti (IV), V (IV), Mo (V), and W (V). By the addition of diethylenetriaminepentaacetate to the buffer solution and preliminary extraction of the benzoylphenylhydroxylaminates of the interfering elements with chloroform it was possible to develop a method for the determination of fluoride with a detection limit of 1.10/sup -5/ M.

  9. CAST solar axion search with 3^He buffer gas: Closing the hot dark matter gap

    E-Print Network [OSTI]

    M. Arik; S. Aune; K. Barth; A. Belov; S. Borghi; H. Brauninger; G. Cantatore; J. M. Carmona; S. A. Cetin; J. I. Collar; E. Da Riva; T. Dafni; M. Davenport; C. Eleftheriadis; N. Elias; G. Fanourakis; E. Ferrer-Ribas; P. Friedrich; J. Galan; J. A. Garcia; A. Gardikiotis; J. G. Garza; E. N. Gazis; T. Geralis; E. Georgiopoulou; I. Giomataris; S. Gninenko; H. Gomez; M. Gomez Marzoa; E. Gruber; T. Guthorl; R. Hartmann; S. Hauf; F. Haug; M. D. Hasinoff; D. H. H. Hoffmann; F. J. Iguaz; I. G. Irastorza; J. Jacoby; K. Jakovcic; M. Karuza; K. Konigsmann; R. Kotthaus; M. Krcmar; M. Kuster; B. Lakic; P. M. Lang; J. M. Laurent; A. Liolios; A. Ljubicic; V. Lozza; G. Luzon; S. Neff; T. Niinikoski; A. Nordt; T. Papaevangelou; M. J. Pivovaroff; G. Raffelt; H. Riege; A. Rodriguez; M. Rosu; J. Ruz; I. Savvidis; I. Shilon; P. S. Silva; S. K. Solanki; L. Stewart; A. Tomas; M. Tsagri; K. van Bibber; T. Vafeiadis; J. Villar; J. K. Vogel; S. C. Yildiz; K. Zioutas

    2014-09-15T23:59:59.000Z

    The CERN Axion Solar Telescope (CAST) has finished its search for solar axions with 3^He buffer gas, covering the search range 0.64 eV < m_a <1.17 eV. This closes the gap to the cosmological hot dark matter limit and actually overlaps with it. From the absence of excess X-rays when the magnet was pointing to the Sun we set a typical upper limit on the axion-photon coupling of g_ag < 3.3 x 10^{-10} GeV^{-1} at 95% CL, with the exact value depending on the pressure setting. Future direct solar axion searches will focus on increasing the sensitivity to smaller values of g_a, for example by the currently discussed next generation helioscope IAXO.

  10. ZnO buffer layer for metal films on silicon substrates

    DOE Patents [OSTI]

    Ihlefeld, Jon

    2014-09-16T23:59:59.000Z

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  11. Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers C. Wetzel, Nagoya, Japan Received 11 December 1995; accepted for publication 21 February 1996 Infrared reflection, their alloys and potential substrates need to be investigated as well. Here we present a study of the infrared

  12. Enhanced fatigue and aging resistance using reactive powders in the optical fiber buffer coating V. V. Rondinella

    E-Print Network [OSTI]

    Matthewson, M. John

    Enhanced fatigue and aging resistance using reactive powders in the optical fiber buffer coating V. V. Rondinella M. J. Matthewson P. R. Foy Fiber Optic Materials Research Program, Department of small quantities of colloidal silica to the UV- curable polymer coating of fused silica optical fiber

  13. Tin Anode for Sodium-Ion Batteries Using Natural Wood Fiber as a Mechanical Buffer and Electrolyte Reservoir

    E-Print Network [OSTI]

    Li, Teng

    Tin Anode for Sodium-Ion Batteries Using Natural Wood Fiber as a Mechanical Buffer and Electrolyte Information ABSTRACT: Sodium (Na)-ion batteries offer an attractive option for low cost grid scale storage due to the abundance of Na. Tin (Sn) is touted as a high capacity anode for Na-ion batteries with a high theoretical

  14. DISTORTIONS TO CURRENT-VOLTAGE CURVES OF CIGS CELLS WITH SPUTTERED Zn(O,S) BUFFER LAYERS

    E-Print Network [OSTI]

    Sites, James R.

    alternative to CdS for (CIGS) thin-film solar cells' buffer layer. It has a higher band gap and thus allows to current- voltage (J-V) curves of sputtered-Zn(O,S)/CIGS solar cells. A straightforward photodiode model partner in the CIGS team, and Russell for showing me the solar cells characterization, and John, Jen

  15. Accurate and Practical Profile-Driven Compilation Using the Profile Buffer Thomas M. Conte Kishore N. Menezes Mary Ann Hirsch

    E-Print Network [OSTI]

    Conte, Thomas M.

    Accurate and Practical Profile-Driven Compilation Using the Profile Buffer Thomas M. Conte Kishore University Raleigh, North Carolina 27695 fconte, knmeneze, mahirschg@eos.ncsu.edu Abstract Profiling instru- mentation has been the most popular method of profiling. However, real-time, interactive

  16. Autonomic Buffer Pool Configuration in PostgreSQL Wendy Powley, Pat Martin, Nailah Ogeer and Wenhu Tian

    E-Print Network [OSTI]

    serves as a proof of concept, illustrating how autonomic principles can be applied to a DBMS to provide automatic sizing of buffer pools, a key resource in a DBMS. We describe an implementation of our autonomic approach to this management problem is an autonomic DBMS that is capable of automatically managing its

  17. BUFFER MANAGER, FILES AND RECORDS (LOOSELY BASED ON THE COW BOOK: 9.4 9.7)

    E-Print Network [OSTI]

    Patel, Jignesh

    Eally looks like one big file that is a large byte array 2. OR, the DBMS grabs;9/10/13 CS 564: Database Management Systems 4 Buffer Management in a DBMS · Data must be in RAM for DBMS to operate on it! ­ Can't keep all the DBMS pages in main

  18. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

    E-Print Network [OSTI]

    Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phaseAs was 70% of that on bulk InP at both temperatures. To achieve this, graded buffers in the InGaAs, InGaP

  19. Evaluation of methods for application of epitaxial buffer and superconductor layers

    SciTech Connect (OSTI)

    NONE

    1999-03-30T23:59:59.000Z

    The recent achievements of critical currents exceeding million amperes per square centimeter at 77K in YBCO deposited over suitably textured substrate have stimulated interest in the potential applications of coated conductors at high temperatures and in high magnetic fields. Currently, ion-beam assisted deposition (IBAD), and rolling assisted bi-axially textured substrate (RABiTS), represent two available options for obtaining textured substrates. For applying suitable coatings of buffer and high temperature superconductor (HTS) material over textured substrates, several options are available which include sputtering, electron-beam evaporation, laser ablation, electrophoresis, chemical vapor deposition (including metal organics chemical vapor deposition), sol-gel, metal organics decomposition, electrodeposition and aerosol/spray pyrolysis. A commercial continuous long-length wire/tape manufacturing scheme developed out of any suitable combination of the above techniques would consist of operations involving preparation of the substrate and application of buffer, HTS and passivation/insulation materials and special treatment steps such as post-annealing. These operations can be effected by various process parameters that can be classified into chemistry, materials, engineering and environmental related parameters. Under the DOE-sponsored program, to carry out an engineering evaluation, first, the process flow schemes were developed for various candidate options identifying the major operating steps, process conditions, and process streams. Next, to evaluate quantifiable parameters such as process severity (e.g. temperature and pressure), coating thickness and deposition rate for HTS material, achieved maximum J{sub c} value (for films >1{micro}m thick) and cost of chemical and material utilization efficiency, the multi-attribute method was used to determine attributes/merits for various parameters and candidate options. To determine similar attribute values for the non-quantifiable parameters, a subjective evaluation was used. Results of the two evaluations were then combined to calculate the overall merit/utility of a given option using weighting factors. To evaluate the effect of arbitrarily determined weighting factors, a sensitivity analysis was carried out by using three different sets of weighting factors. In the end, the results of the overall utility/merit values calculated using different sets of weighting factors were utilized to determine the preliminary ranking among the candidate options. As a result of this study, MOD, Sol-Gel, MOCVD, E-Beam and PLD options have been identified as the leading candidates for continuous, long-length processing of coated HTS conductors. However, there are several technical concerns related to each of these which need to be addressed first before a commercially viable option can be developed out of any one of them.

  20. Determination of effective axion masses in the helium-3 buffer of CAST

    SciTech Connect (OSTI)

    Ruz, J

    2011-11-18T23:59:59.000Z

    The CERN Axion Solar Telescope (CAST) is a ground based experiment located in Geneva (Switzerland) searching for axions coming from the Sun. Axions, hypothetical particles that not only could solve the strong CP problem but also be one of the favored candidates for dark matter, can be produced in the core of the Sun via the Primakoff effect. They can be reconverted into X-ray photons on Earth in the presence of strong electromagnetic fields. In order to look for axions, CAST points a decommissioned LHC prototype dipole magnet with different X-ray detectors installed in both ends of the magnet towards the Sun. The analysis of the data acquired during the first phase of the experiment yielded the most restrictive experimental upper limit on the axion-to-photon coupling constant for axion masses up to about 0.02 eV/c{sup 2}. During the second phase, CAST extends its mass sensitivity by tuning the electron density present in the magnetic field region. Injecting precise amounts of helium gas has enabled CAST to look for axion masses up to 1.2 eV/c{sup 2}. This paper studies the determination of the effective axion masses scanned at CAST during its second phase. The use of a helium gas buffer at temperatures of 1.8 K has required a detailed knowledge of the gas density distribution. Complete sets of computational fluid dynamic simulations validated with experimental data have been crucial to obtain accurate results.

  1. Buffer Map Message Compression Based on Relevant Window in P2P Streaming Media System

    E-Print Network [OSTI]

    Li, Chunxi; Chiu, DahMing

    2011-01-01T23:59:59.000Z

    The overhead traffic for buffer map message exchange cannot be neglectable in the engineering practices of some most popular P2P streaming media systems like PPLive and UUSee. In this paper, we for the first time find this issue and bring in some solutions. Creatively, the vital concept of relevant window is introduced and two crucial but easily overlooked principles involving the nature features of BM exchange are discovered so as to lay a solid foundation for later in-depth discussion. We first present two original efficient BM compression schemes, the feasibilities of which are strictly proved from the point of view of mathematics. Moreover, the average length of the compressed BM is deduced theoretically. The numerical results computed with UUSee's system parameters confirm that the size of bitmap can be reduced by 86% and 90% from 456 bits down to only 66 bits and 46 bits respectively according to two methods we presented, comparing to the traditional algorithm used by UUSee which can decrease the size b...

  2. Study of the Nucleation and Growth of YBCO on Oxide Buffered Metallic Tapes

    SciTech Connect (OSTI)

    Solovyov, Vyacheslav

    2009-04-10T23:59:59.000Z

    The CRADA collaboration concentrated on developing the scientific understanding of the factors necessary for commercialization of high temperature superconductors (HTS) based on the YBCO coated conductor technology for electric power applications. The project pursued the following objectives: 1. Establish the correlations between the YBCO nuclei density and the properties of the CeO{sub 2} layer of the RABiTS{trademark} template; 2. Compare the nucleation and growth of e-beam and MOD based precursors on the buffered RABiTS{trademark} templates and clarify the materials science behind the difference; and 3. Explore routes for the optimization of the nucleation and growth of thick film MOD precursors in order to achieve high critical current densities in thick films. The CRADA work proceeded in two steps: 1. Detailed characterization of epitaxial ceria layers on “model” substrates, such as (001) YSZ and on RABiTS tapes; and 2. Study of YBCO nucleation on well-defined substrates and on long-length RABiTS.

  3. Oxygen buffering of Kilauea volcanic gases and the oxygen fugacity of Kilauea basalt

    SciTech Connect (OSTI)

    Gerlach, T.M. (Geological Survey, Vancouver, WA (United States))

    1993-02-01T23:59:59.000Z

    Volcanic gases collected during episode 1 of the Puu Oo eruption along the east rift zone of Kilauea Volcano, Hawaii, have uniform C-O-H-S-Cl-F compositions that are sharply depleted in CO[sub 2]. The CO[sub 2]-poor gases are typical of Type II volcanic gases (GERLACH and GRAEBER, 1985) and were emitted from evolved magma stored for a prolonged period of time in the east rift zone after releasing CO[sub 2]-rich gases during an earlier period of temporary residence in the summit magma chamber. The samples are remarkably free of contamination by atmospheric gases and meteoric water. Thermodynamic evaluation of the analytical data shows that the episode 1 gases have equilibrium compositions appropriate for temperatures between 935 and 1032[degrees]C. Open- and closed-system equilibrium models of species distributions for the episode 1 gases show unequivocally that coexisting lavas buffered the gas oxygen fugacities during cooling. These models indicate that the F[sub o[sub 2

  4. Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

    SciTech Connect (OSTI)

    Nandi, R., E-mail: rajunandi@iitb.ac.in; Mohan, S., E-mail: rajunandi@iitb.ac.in; Major, S. S. [Department of Physics, Indian Institute of Technology Bombay, Mumbai - 400076 (India); Srinivasa, R. S. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai - 400076 (India)

    2014-04-24T23:59:59.000Z

    ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

  5. Isotherm parameters and intraparticle mass transfer kinetics on molecularly imprinted polymers in acetonitrile/buffer mobile phases

    SciTech Connect (OSTI)

    Kim, Hyunjung [University of Tennessee, Knoxville (UTK); Kaczmarski, Krzysztof [University of Tennessee and Rzeszow University of Technology, Poland; Guiochon, Georges A [ORNL

    2006-03-01T23:59:59.000Z

    The equilibrium isotherm and the intraparticle mass transfer kinetics of the enantiomers of the template were investigated on an Fmoc-L-tryptophan (Fmoc-L-Trp) imprinted polymer at different pHs and water concentrations in acetonitrile/aqueous buffer mobile phases. The equilibrium isotherm data were measured using frontal analysis at 25 {+-} 2 C. The adsorption energy distribution was found to be trimodal, with narrow modes. Consistent with this distribution, the adsorption data were modeled using a tri-Langmuir isotherm equation and the best estimates of the isotherm parameters were determined. The intraparticle mass transfer parameters were derived by comparing the profiles of experimental overloaded bands and the profiles calculated using the isotherm model and the lumped pore diffusion (POR) model of chromatography. These results showed that different adsorption and mass transfer mechanisms exist in mobile phases made of acetonitrile/aqueous buffer and of acetonitrile/acetic acid solutions.

  6. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2014-02-14T23:59:59.000Z

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  7. Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

    SciTech Connect (OSTI)

    Pecz, B.; El-Shaer, A.; Bakin, A.; Mofor, A.-C.; Waag, A.; Stoemenos, J. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany); Physics Department, Aristotle University, University Campus, 54006 Thessaloniki (Greece)

    2006-11-15T23:59:59.000Z

    The structural characteristics of the ZnO film grown on sapphire substrate using a thin MgO buffer layer were studied using transmission electron microscopy and high-resolution x-ray diffraction. The growth was carried out in a modified plasma-molecular beam epitaxy system. The observed misfit dislocations were well confined at the sapphire overgrown interface exhibiting domain matching epitaxy, where the integral multiples of lattice constants match across the interface. The main extended defects in the ZnO film were the threading dislocations having a mean density of 4x10{sup 9} cm{sup -2}. The formation of the MgO buffer layer as well as the ZnO growth were monitored in situ by reflection high-energy electron diffraction. The very thin {approx}1 nm, MgO buffer layer can partially interdiffuse with the ZnO as well as react with the Al{sub 2}O{sub 3} substrate forming an intermediate epitaxial layer having the spinel (MgO/Al{sub 2}O{sub 3}) structure.

  8. Physical-Chemical Treatment of Metals and Radionuclides in the Saturated Zone Using Colloidal Buffers - 12515

    SciTech Connect (OSTI)

    Lai, Yenjung; Borden, Robert C. [North Carolina State University, Raleigh, NC 27695 (United States); Alperin, Ed [EOS Remediation, LLC. Raleigh, NC 27607 (United States)

    2012-07-01T23:59:59.000Z

    There are numerous acidic plumes throughout the DOE complex and the nation as a whole. Low aquifer pH is a major concern since many important radionuclides (Pu, Ra, Sr, Tc) and metals (Cd, Co, Cs, Mn, Ni, Pb, Zn) strongly sorb to iron hydroxides and aluminosilicates under neutral to alkaline conditions, but are mobile in acidic plumes. To effectively use natural and enhanced attenuation (NEA) for management of these contaminants, we must be able to raise aquifer pH and maintain it at background levels until the external acid loading to the aquifer has dissipated. Geochemical modeling showed that a permeable reactive barrier (PRB) formed by injection of colloidal Mg(OH){sub 2} would last much longer than colloidal Ca(OH){sub 2} due to the much lower solubility of Mg(OH){sub 2}. Assuming a 1,000 meq/L suspension of colloidal Mg(OH)2 could be effectively distributed, the PRB could last over twenty years before rejuvenation was required. Preliminary bench-scale treatability studies were conducted to demonstrate the efficacy of increasing the aquifer pH using a colloidal pH buffer. Laboratory studies demonstrated that three different colloidal Mg(OH){sub 2} suspensions (concentration varied from 1,000 to 1,250 meq/L) could be transported through the columns packed with aquifer sand without significant permeability loss. The time before suspension breakthrough into the column effluent varied with surface treatment, indicating the Mg(OH)2 retention and PRB longevity could be controlled by varying the suspension surface treatment. (authors)

  9. High quality metamorphic graded buffers with lattice-constants intermediate to GaAs an InP for device applications

    E-Print Network [OSTI]

    Lee, Kenneth Eng Kian

    2009-01-01T23:59:59.000Z

    We have investigated the use of a continuous, linear grading scheme for compositionally-graded metamorphic InxGal-As buffers on GaAs, which can be used as virtual substrates for optical emitters operating at wavelengths > ...

  10. Production of cold beams of ND{sub 3} with variable rotational state distributions by electrostatic extraction of He and Ne buffer-gas-cooled beams

    SciTech Connect (OSTI)

    Twyman, Kathryn S.; Bell, Martin T.; Heazlewood, Brianna R.; Softley, Timothy P., E-mail: tim.softley@chem.ox.ac.uk [Department of Chemistry, University of Oxford, Chemistry Research Laboratory, 12 Mansfield Road, Oxford OX1 3TA (United Kingdom)

    2014-07-14T23:59:59.000Z

    The measurement of the rotational state distribution of a velocity-selected, buffer-gas-cooled beam of ND{sub 3} is described. In an apparatus recently constructed to study cold ion-molecule collisions, the ND{sub 3} beam is extracted from a cryogenically cooled buffer-gas cell using a 2.15 m long electrostatic quadrupole guide with three 90° bends. (2+1) resonance enhanced multiphoton ionization spectra of molecules exiting the guide show that beams of ND{sub 3} can be produced with rotational state populations corresponding to approximately T{sub rot} = 9–18 K, achieved through manipulation of the temperature of the buffer-gas cell (operated at 6 K or 17 K), the identity of the buffer gas (He or Ne), or the relative densities of the buffer gas and ND{sub 3}. The translational temperature of the guided ND{sub 3} is found to be similar in a 6 K helium and 17 K neon buffer-gas cell (peak kinetic energies of 6.92(0.13) K and 5.90(0.01) K, respectively). The characterization of this cold-molecule source provides an opportunity for the first experimental investigations into the rotational dependence of reaction cross sections in low temperature collisions.

  11. EXAMINATION OF DISLOCATIONS IN LATTICE-MISMATCHED GaInAs/BUFFER LAYER/GaAs FOR III-V PHOTOVOLTAICS

    SciTech Connect (OSTI)

    Levander, A.; Geisz, J.

    2007-01-01T23:59:59.000Z

    Dislocations act as sites for nonradiative electron/hole pair recombination, which reduces the effi ciency of photovoltaics. Lattice-matched materials can be grown on top of one another without forming a high density of dislocations. However, when the growth of lattice-mismatched (LMM) materials is attempted, many dislocations result from the relaxation of strain in the crystal structure. In an attempt to reduce the number of dislocations that propagate into a solar device when using LMM materials, a compositionally step-graded buffer is placed between the two LMM materials. In order to confi ne the dislocations to the buffer layer and therefore increase material quality and device effi ciency, the growth temperature and thickness of the buffer layer were varied. A GaInP compositionally graded buffer and GaInAs p-n junction were grown on a GaAs substrate in a metal-organic chemical vapor deposition (MOCVD) system. A multibeam optical stress sensor (MOSS) and X-ray diffraction (XRD) were used to characterize the strain in the epilayers. Electrical and optoelectronic properties were measured using a probe station and multimeter setup, solar simulator, and a quantum effi ciency instrument. It was determined that device functionality was highly dependent on the growth temperature of the graded buffer. As growth temperature increased, so did the dislocation density in the device despite an increase in the dislocation velocity, which should have increased the dislocation annihilation rate and the diffusion of dislocations to the edge of the crystal. The thickness of the graded buffer also affected device effi ciency with thinner samples performing poorly. The thinner graded buffer layers had high internal resistances from reduced carrier concentrations. In terms of effi ciency, the empirically derived recipe developed by the scientists at the National Renewable Energy Laboratory (NREL) produced the highest quality cells.

  12. Nanostructured europium oxide thin films deposited by pulsed laser ablation of a metallic target in a He buffer atmosphere

    SciTech Connect (OSTI)

    Luna, H.; Franceschini, D. F.; Prioli, R.; Guimaraes, R. B.; Sanchez, C. M.; Canal, G. P.; Barbosa, M. D. L.; Galvao, R. M. O. [Instituto de Fisica, Universidade Federal do Rio de Janeiro, Cx. Postal 68528, Rio de Janeiro, RJ 21941-972 (Brazil); Instituto de Fisica, Universidade Federal Fluminense, Niteroi, RJ 24210-346 (Brazil); Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, Rua Marques de Sao Vicente 225, 22453-970, Rio de Janeiro, RJ (Brazil); Instituto de Fisica, Universidade Federal Fluminense, Niteroi, RJ 24210-346 (Brazil); Centro Brasileiro de Pesquisas Fisicas, Laboratorio de Plasmas Aplicados, Rua Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ (Brazil); Instituto de Fisica, Departamento de Fisica Nuclear, Universidade de Sao Paulo, Caixa Postal 66328, 05315-970, Sao Paulo, SP (Brazil); Centro Brasileiro de Pesquisas Fisicas, Laboratorio de Plasmas Aplicados, Rua Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ (Brazil)

    2010-09-15T23:59:59.000Z

    Nanostrucured europium oxide and hydroxide films were obtained by pulsed Nd:YAG (532 nm) laser ablation of a europium metallic target, in the presence of a 1 mbar helium buffer atmosphere. Both the produced film and the ambient plasma were characterized. The plasma was monitored by an electrostatic probe, for plume expansion in vacuum or in the presence of the buffer atmosphere. The time evolution of the ion saturation current was obtained for several probe to substrate distances. The results show the splitting of the plume into two velocity groups, being the lower velocity profile associated with metal cluster formation within the plume. The films were obtained in the presence of helium atmosphere, for several target-to-substrate distances. They were analyzed by Rutherford backscattering spectrometry, x-ray diffraction, and atomic force microscopy, for as-deposited and 600 deg. C treated-in-air samples. The results show that the as-deposited samples are amorphous and have chemical composition compatible with europium hydroxide. The thermally treated samples show x-ray diffraction peaks of Eu{sub 2}O{sub 3}, with chemical composition showing excess oxygen. Film nanostructuring was shown to be strongly correlated with cluster formation, as shown by velocity splitting in probe current versus time plots.

  13. Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

    SciTech Connect (OSTI)

    Däubler, J., E-mail: juergen.daeubler@iaf.fraunhofer.de; Passow, T.; Aidam, R.; Köhler, K.; Kirste, L.; Kunzer, M.; Wagner, J. [Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg (Germany)

    2014-09-15T23:59:59.000Z

    Metamorphic (i.e., linear composition graded) GaInN buffer layers with an increased in-plane lattice parameter, grown by plasma-assisted molecular beam epitaxy, were used as templates for metal organic vapor phase epitaxy (MOVPE) grown GaInN/GaInN quantum wells (QWs), emitting in the green to red spectral region. A composition pulling effect was observed allowing considerable higher growth temperatures for the QWs for a given In composition. The internal quantum efficiency (IQE) of the QWs was determined by temperature and excitation power density dependent photoluminescence (PL) spectroscopy. An increase in IQE by a factor of two was found for green emitting QWs grown on metamorphic GaInN buffer compared to reference samples grown on standard GaN buffer layers. The ratio of room temperature to low temperature intensity PL of the red emitting QWs were found to be comparable to the PL efficiency of green emitting QWs, both grown on metamorphic GaInN buffers. The excitation density and well width dependence of the IQE indicate a reduction of the quantum confined Stark effect upon growth on GaInN buffer layers with increased in-plane lattice parameter.

  14. Dissolution and compaction of albite sand in distilled water and pH-buffered carboxylic acid solutions: experiments at 100 degrees and 160 degrees C

    E-Print Network [OSTI]

    Carpenter, Thomas Doyle

    1995-01-01T23:59:59.000Z

    buffer (pH, = 4. 7'1, the concentrations of the protonated (HAc) and deprotonated (Ac-) species are almost equal. However, in the acetate+citrate solutions (pH, = 4. 4), the dominant 0. 08 0. 07 0. 06 0. 05 0 0. 04 a) 0. 03 O 0 0. 02 HAc 4. 4... response to new pore fluids suggests 29 Ac+ Ct Buffer Ac Buffer s 4 c/j d d de T = 160'C, Pe = 34. 5 MPa e = 0 118, Flow Rate = 21 ml/hr 3 5 5 2 5 0 OO OO 05 1260 1270 1280 Time (hrs) 1290 1300 FIG. 9. The effect of changing pore flui...

  15. The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates

    SciTech Connect (OSTI)

    Ok, Kyung-Chul; Park, Jin-Seong, E-mail: hkim-2@naver.com, E-mail: jsparklime@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Ko Park, Sang-Hee; Kim, H., E-mail: hkim-2@naver.com, E-mail: jsparklime@hanyang.ac.kr [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Hwang, Chi-Sun [Transparent Electronics Team, ETRI, Daejeon 305-350 (Korea, Republic of); Soo Shin, Hyun; Bae, Jonguk [LG Display R and D Center, LG Display Co., Ltd., Paju 413-811 (Korea, Republic of)

    2014-02-10T23:59:59.000Z

    We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiN{sub x}/AlO{sub x} buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiN{sub x} or SiO{sub x} buffer layers. The substrates could be bent down to a radius of curvature of 15?mm and the devices remained normally functional.

  16. Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency

    SciTech Connect (OSTI)

    Cerio, Frank

    2013-09-14T23:59:59.000Z

    The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm{sup 2} using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance was analyzed and improvements implemented to the Veeco PVD-AlN prototype system to establish a specification and baseline PVD-AlN films on sapphire and in parallel the evaluation of PVD AlN on silicon substrates began. In Phase II of the project a Beta tool based on a scaled-up process module capable of depositing uniform films on batches of 4”or 6” diameter substrates in a production worthy operation was developed and qualified. In Phase III, the means to increase the throughput of the PVD-AlN system was evaluated and focused primarily on minimizing the impact of the substrate heating and cooling times that dominated the overall cycle time.

  17. Formation of a Buffer Layer for Graphene on C-face SiC{0001} Guowei He, N. Srivastava, and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    . Feenstra Dept. Physics, Carnegie Mellon University, Pittsburgh, PA 15213 Abstract Graphene films prepared, the formation of interface structures and subsequent graphene films strongly depends on preparation conditions1 Formation of a Buffer Layer for Graphene on C-face SiC{0001} Guowei He, N. Srivastava, and R. M

  18. Growth and Properties of (001)-oriented Pb(Zr?.??Ti?.??)O?/LaNiO? Films on Si(001) Substrates with TiN Buffer Layers

    E-Print Network [OSTI]

    Zhu, Tie-Jun

    Pulsed laser deposition has been used to grow Pb(Zr?.??Ti?.??)O? (PZT)/LaNiO? (LNO) heterostructures with restricted crystallographic orientations on bare Si(001) and SiO?-coated Si(001) substrates, using TiN buffer layers. ...

  19. Structural and chemical investigations of CBD-and PVD-CdS buffer layers and interfaces in Cu(In,Ga)Se2-based thin film solar cells

    E-Print Network [OSTI]

    Romeo, Alessandro

    (In,Ga)Se2-based thin film solar cells D. Abou-Rasa,b,*, G. Kostorza , A. Romeob,1 , D. Rudmannb , A Available online 8 December 2004 Abstract It is known that high-efficiency thin film solar cells based on Cu in efficiencies of solar cells with CBD- and PVD-CdS buffer layers can partly be explained by referring

  20. Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112) Minjoo L. Lee a,b,*, Dimitri A. Antoniadis a

    E-Print Network [OSTI]

    Haller, Gary L.

    Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112) Minjoo L. Lee a The growth of SiGe on surfaces other than Si(001) is of interest in VLSI technology both for realizing novel-mismatch SiGe films grown on Si(111), (110), and (112) possess threading dislocation densities (TDD) >10Â

  1. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, VOL. 20, NO. 5, MAY 2001 693 Buffer Minimization in Pass Transistor Logic

    E-Print Network [OSTI]

    Zhou, Hai

    and then mapped to cells of a pass transistor library consisting of three function cells and four inverters on multifan-out nodes. We also consider the case when buffers are inverters, where phase assignment needs by Associate Editor D. Hill. H. Zhou is with the Advanced Technology Group, Synopsys, Inc., Mountain View, CA

  2. U-152: OpenSSL "asn1_d2i_read_bio()" DER Format Data Processing Vulnerability

    Broader source: Energy.gov [DOE]

    The vulnerability is caused due to a type casting error in the "asn1_d2i_read_bio()" function when processing DER format data and can be exploited to cause a heap-based buffer overflow.

  3. Securing software : an evaluation of static source code analyzers

    E-Print Network [OSTI]

    Zitser, Misha, 1979-

    2003-01-01T23:59:59.000Z

    This thesis evaluated five static analysis tools--Polyspace C Verifier, ARCHER, BOON, Splint, and UNO--using 14 code examples that illustrated actual buffer overflow vulnerabilities found in various versions of Sendmail, ...

  4. Volatile fatty acid fermentation of AFEX-treated newspaper and bagasse by rumen microorganisms

    E-Print Network [OSTI]

    Blasig, Jorge Dari?o

    1991-01-01T23:59:59.000Z

    days and filters were replaced every 12 hours. Loading rate does not include alfalfa. H A D Figure 4. Continuous culture system. A, buffer reservoir, B, fermenter; C, overflow effluent reservoir; D, filtered effluent reservoir; E, gas collector; F..., G, peristaltic pumps; H, filter, I, magnetic stir plate, containing up to 4 fermenter vessels; J, temperature bath circulator 28 FIGURE 5. Fermentor diagram. 1, fermenter lid; 2, buffer input; 3, gas outlet; 4, overflow port; 5, filter; 6...

  5. Epitaxial growth and thermal stability of Fe{sub 4}N film on TiN buffered Si(001) substrate

    SciTech Connect (OSTI)

    Xiang, H.; Shi, F.-Y.; Voyles, P. M.; Chang, Y. A. [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Rzchowski, M. S. [Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2011-04-01T23:59:59.000Z

    Epitaxial Fe{sub 4}N thin films were grown on TiN buffered Si(001) substrate by dc reactive sputtering deposition at different substrate temperatures. Fe{sub 4}N films epitaxially grew on TiN within the substrate temperature range from 250 to 350 deg. C. Lower than 250 deg. C there will be some other Fe{sub x}N compounds formed and higher than 400 deg. C there will be only Fe left. Fe{sub 4}N is metastable and the postannealing process in vacuum will decompose Fe{sub 4}N film to Fe. However, introducing 30% N{sub 2} in the postannealing atmosphere can stabilize the Fe{sub 4}N up to 350 deg. C in the (Ar,N{sub 2}) gas mixture. The surface roughness of the epitaxial Fe{sub 4}N films decreases with film thickness. There is in-plane biaxial magnetic anisotropy of epitaxial Fe{sub 4}N(001) on Si(001) with the [100] easy direction.

  6. Silica–silica Polyimide Buffered Optical Fibre Irradiation and Strength Experiment at Cryogenic Temperatures for 355 nm Pulsed Lasers

    E-Print Network [OSTI]

    Takala, E; Bordini, B; Bottura, L; Bremer, J; Rossi, L

    2012-01-01T23:59:59.000Z

    A controlled UV-light delivery system is envisioned to be built in order to study the stability properties of superconducting strands. The application requires a wave guide from room temperature to cryogenic temperatures. Hydrogen loaded and unloaded polyimide buffered silica–silica 100 microm core fibres were tested at cryogenic temperatures. A thermal stress test was done at 1.9 K and at 4.2 K which shows that the minimal mechanical bending radius for the fibre can be 10 mm for testing (transmission was not measured). The cryogenic transmission loss was measured for one fibre to assess the magnitude of the transmission decrease due to microbending that takes place during cooldown. UV-irradiation degradation measurements were done for bent fibres at 4.2 K with a deuterium lamp and 355 nm pulsed lasers. The irradiation tests show that the fibres have transmission degradation only for wavelengths smaller than 330 nm due to the two photon absorption. The test demonstrates that the fibres are suitable for the ...

  7. Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si{sub 1-x}Ge{sub x} buffer layers

    SciTech Connect (OSTI)

    Strelchuk, V. V.; Nikolenko, A. S., E-mail: nikolenko_mail@ukr.net; Lytvyn, P. M.; Kladko, V. P.; Gudymenko, A. I.; Valakh, M. Ya. [National Academy of Sciences of Ukraine, V. Lashkaryov Institute of Semiconductor Physics (Ukraine); Krasilnik, Z. F.; Lobanov, D. N.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2012-05-15T23:59:59.000Z

    Atomic-force microscopy, micro-Raman spectroscopy, and high resolution X-ray diffraction are applied to study the spatial ordering in single layers of SiGe nanoislands grown on a strained Si{sub 1-x}Ge{sub x} buffer sublayer. It is shown that, apart from stimulating the spatial ordering of nanoislands, the introduction of a Si{sub 1-x}Ge{sub x} sublayer leads to an enhanced role for interdiffusion processes. An unusually high increase in the volume of nanoislands in the process of the epitaxy is related to the anomalously strong diffusion from the buffer sublayer into the islands that is induced by nonuniform fields of elastic strains. The anisotropy of the islands shape and spatial ordering is discussed in terms of the anisotropy of the diffusion processes in spatially nonuniform fields of elastic strains.

  8. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    SciTech Connect (OSTI)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece)

    2014-09-15T23:59:59.000Z

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300?nm GaN/ 200?nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8?×?10{sup 12} to 2.1 × 10{sup 13} cm{sup ?2} as the AlN barrier thickness increased from 2.2 to 4.5?nm, while a 4.5?nm AlN barrier would result to 3.1?×?10{sup 13} cm{sup ?2} on a GaN buffer layer. The 3.0?nm AlN barrier structure exhibited the highest 2DEG mobility of 900?cm{sup 2}/Vs for a density of 1.3?×?10{sup 13} cm{sup ?2}. The results were also confirmed by the performance of 1??m gate-length transistors. The scaling of AlN barrier thickness from 1.5?nm to 4.5?nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63?A/mm. The maximum drain-source current was 1.1?A/mm for AlN barrier thickness of 3.0?nm and 3.7?nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0?nm AlN barrier.

  9. Lattice-engineered Si{sub 1-x}Ge{sub x}-buffer on Si(001) for GaP integration

    SciTech Connect (OSTI)

    Skibitzki, Oliver, E-mail: skibitzki@ihp-microelectronics.com; Zaumseil, Peter; Yamamoto, Yuji; Andreas Schubert, Markus [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Paszuk, Agnieszka; Hannappel, Thomas [Technische Universität Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Hatami, Fariba; Ted Masselink, W. [Institut für Physik, Humboldt Universität zu Berlin, Newtonstrasse 15, 12489 Berlin (Germany); Trampert, Achim [Paul Drude Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Tillack, Bernd [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin (Germany); Schroeder, Thomas [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Brandenburgische Technische Universität, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

    2014-03-14T23:59:59.000Z

    We report a detailed structure and defect characterization study on gallium phosphide (GaP) layers integrated on silicon (Si) (001) via silicon-germanium (SiGe) buffer layers. The presented approach uses an almost fully relaxed SiGe buffer heterostructure of only 400?nm thickness whose in-plane lattice constant is matched to GaP—not at room but at GaP deposition temperature. Single crystalline, pseudomorphic 270?nm thick GaP is successfully grown by metalorganic chemical vapour deposition on a 400?nm Si{sub 0.85}Ge{sub 0.15}/Si(001) heterosystem, but carries a 0.08% tensile strain after cooling down to room temperature due to the bigger thermal expansion coefficient of GaP with respect to Si. Transmission electron microscopy (TEM) studies confirm the absence of misfit dislocations in the pseudomorphic GaP film but growth defects (e.g., stacking faults, microtwins, etc.) especially at the GaP/SiGe interface region are detected. We interpret these growth defects as a residue of the initial 3D island coalescence phase of the GaP film on the SiGe buffer. TEM-energy-dispersive x-ray spectroscopy studies reveal that these defects are often correlated with stoichiometric inhomogeneities in the GaP film. Time-of-flight Secondary ion mass spectrometry detects sharp heterointerfaces between GaP and SiGe films with a minor level of Ga diffusion into the SiGe buffer.

  10. Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement

    SciTech Connect (OSTI)

    Yang, Shu; Zhou, Chunhua; Jiang, Qimeng; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong); Lu, Jianbiao; Huang, Baoling [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)] [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-01-06T23:59:59.000Z

    Thermally stimulated current (TSC) spectroscopy and high-voltage back-gating measurement are utilized to study GaN buffer traps specific to AlGaN/GaN lateral heterojunction structures grown on a low-resistivity Si substrate. Three dominating deep-level traps in GaN buffer with activation energies of ?E{sub T1}???0.54?eV, ?E{sub T2}???0.65?eV, and ?E{sub T3}???0.75?eV are extracted from TSC spectroscopy in a vertical GaN-on-Si structure. High back-gate bias applied to the Si substrate could influence the drain current in an AlGaN/GaN-on-Si high-electron-mobility transistor in a way that cannot be explained with a simple field-effect model. By correlating the trap states identified in TSC with the back-gating measurement results, it is proposed that the ionization/deionization of both donor and acceptor traps are responsible for the generation of buffer space charges, which impose additional modulation to the 2DEG channel.

  11. BurstBuffer

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisiting the TWPSuccess Stories Siteandscience, and8 FY 2009422 199943

  12. BUFFERED WELL FIELD OUTLINES

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1 U.S. Department ofU.S. Offshore U.S.Market ModuleLiquids Reserve Class

  13. Structural characterization of strained silicon grown on a SiGe buffer layer This article has been downloaded from IOPscience. Please scroll down to see the full text article.

    E-Print Network [OSTI]

    Florida, University of

    Structural characterization of strained silicon grown on a SiGe buffer layer This article has been silicon grown on a SiGe buffer layer J H Jang1, M S Phen1, A Gerger1, K S Jones1, J L Hansen2, A N Larsen2 of about 50 nm thick strained-Si/Si0.7Ge0.3/graded-SiGe/Si-substrate layers grown by MBE (molecular beam

  14. Multisource-sputtered ErBa/sub 2/Cu/sub 3/O/sub 7-x/ films on single-crystal and buffered crystalline substrates

    SciTech Connect (OSTI)

    Simon, R.W.; Platt, C.E.; Lee, A.E.; Daly, K.P.; Wagner, M.K.

    1988-09-01T23:59:59.000Z

    High-quality superconducting films of erbium-barium-copper-oxide have been produced in a multisource sputtering system on a variety of substrates, including buffered sapphire and silicon wafers as well as various single-crystal materials. Fine-grained polycrystalline films with narrow (<4 K) resistive transitions have been grown on a number of different substrates. The use of erbium in the 1-2-3 compound leads to improved film morphology and to more forgiving conditions for establishing of the superconducting phase. Sputtered neutral mass spectroscopy (SNMS) yields useful information about the compositional profile of the films.

  15. T-588: HP Virtual SAN Appliance Stack Overflow

    Broader source: Energy.gov [DOE]

    A vulnerability has been reported in HP StorageWorks P4000 Virtual SAN Appliance Software, which can be exploited by malicious people to compromise a vulnerable system.

  16. V-074: IBM Informix Genero libpng Integer Overflow Vulnerability |

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group current C3EDepartment of EnergyTheVulnerabilitiesDepartment of

  17. Polarization fatigue and photoinduced current in (Pb0.72La0.28)Ti0.93O3 buffered Pb(Zr0.52Ti0.48)O3 films on platinized silicon

    E-Print Network [OSTI]

    Cao, Wenwu

    , The Pennsylvania State University, University Park, PA, 16802, USA 1. Introduction Lead zirconate titanate (PZT-current (ac) field, prohibits commercial use of PZT films [1,2]. The use of oxide electrodes instead of Pt if the oxide electrodes or buffer layers were used on both sides of PZT films. There were also several

  18. @CRC Press 2015. This chapter appears as G. Honan, N. Gekakis, M. Hassanalieragh, A. Nadeau, G. Sharma and T. Soyata, "Energy Harvesting and Buffering for CyberPhysical Systems: A Review," Cyber Physical Systems -A Computational

    E-Print Network [OSTI]

    Sharma, Gaurav

    are batteries and supercapacitors, with the batteries being further classified into their own sub of environments. Keywords: Energy harvesting; Energy buffering; Supercapacitors; Cyber-physical Systems #12;@CRC batteries, such as Li-Ion, lead-acid, NiCd, and Ni-Mh, or supercapacitors. While supercapacitors

  19. @CRC Press 2015. This chapter appears as N. Gekakis, A. Nadeau, M. Hassanalieragh, Y. Chen, Z. Liu, G. Honan, F. Erdem, G. Sharma and T. Soyata, "Modeling of Supercapacitors as an Energy Buffer for Cyber-Physical Systems," Cyber Physical Systems -

    E-Print Network [OSTI]

    Sharma, Gaurav

    , G. Honan, F. Erdem, G. Sharma and T. Soyata, "Modeling of Supercapacitors as an Energy Buffer, 2015. Modeling of Supercapacitors as an Energy Buffer for Cyber-Physical Systems Nicholas Gekakis Supercapacitors have superior power density, 10x higher than that of the rechargeable batteries, while

  20. Aspects of the SrO-CuO-TiO2 Ternary System Related to the Deposition of SrTiO3 and Copper-Doped SrTiO3 Thin-Film Buffer Layers

    SciTech Connect (OSTI)

    A. Ayala

    2004-12-20T23:59:59.000Z

    YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) coated conductors are promising materials for large-scale superconductivity applications. One version of a YBCO coated conductor is based on ion beam assisted deposition (IBAD) of magnesium oxide (MgO) onto polycrystalline metal substrates. SrTiO{sub 3} (STO) is often deposited by physical vapor deposition (PVD) methods as a buffer layer between the YBCO and IBAD MgO due to its chemical stability and lattice mismatch of only {approx}1.5% with YBCO. In this work, some aspects of the stability of STO with respect to copper (Cu) and chemical solution deposition of STO on IBAD MgO templates were examined. Solubility limits of Cu in STO were established by processing Cu-doped STO powders by conventional bulk preparation techniques. The maximum solubility of Cu in STO was {approx}1% as determined by transmission electron microscopy (TEM) and Rietveld refinements of x-ray diffraction (XRD) data. XRD analysis, performed in collaboration with NIST, on powder compositions on the STO/SrCuO{sub 2} tie line did not identify any ternary phases. SrCu{sub 0.10}Ti{sub 0.90}O{sub y} buffer layers were prepared by pulsed laser deposition (PLD) and CSD on IBAD MgO flexible metallic textured tapes. TEM analysis of a {approx}100 nm thick SrCu{sub 0.10}Ti{sub 0.90}O{sub y} buffer layer deposited by PLD showed a smooth Cu-doped STO/MgO interface. A {approx}600 nm thick YBCO film, deposited onto the SrCu{sub 0.10}Ti{sub 0.90}O{sub y} buffer by PLD, exhibited a T{sub c} of 87 K and critical current density (J{sub c}) of {approx}1 MA/cm{sup 2}. STO and Cu-doped STO thin films by CSD were {approx}30 nm thick. The in plane alignment (FWHM) after deposition of the STO improved by {approx}1{sup o} while it degraded by {approx}2{sup o} with the SrCu{sub 0.05}TiO{sub y} buffer. YBCO was deposited by PLD on the STO and SrCu{sub 0.05}TiO{sub y} buffers. The in plane alignment (FWHM) of the YBCO with the STO buffer layer slightly improved while that of the YBCO with the SrCu{sub 0.05}TiO{sub y} buffer layer remained constant. A goal of the CSD approach to fabrication of coated conductors is process simplicity. In this study, single layer textured films were obtained without a nucleating seed layer that has been deemed necessary by several investigators. These results indicate that Cu-doped STO buffer layers deposited by PLD or CSD are compatible with IBAD MgO and YBCO and that CSD is a viable approach to coated conductor fabrication.

  1. Magneto-optical resonance of electromagnetically induced absorption with high contrast and narrow width in a vapour cell with buffer gas

    E-Print Network [OSTI]

    D. V. Brazhnikov; A. V. Taichenachev; V. I. Yudin

    2014-08-11T23:59:59.000Z

    The method for observing the high-contrast and narrow-width resonances of electromagnetically induced absorption (EIA) in the Hanle configuration under counterpropagating light waves is proposed. We theoretically analyze the absorption of a probe light wave in presence of counterpropagating one with the same frequency as the function of a static magnetic field applied along the vectors of light waves, propagating in a vapour cell. Here, as an example, we study a "dark" type of atomic dipole transition Fg=1-->Fe=1 in D1 line of 87Rb, where usually the electromagnetically induced transparency (EIT) can be observed. To obtain the EIA signal one should proper chose the polarizations of light waves and intensities. In contrast of regular schemes for observing EIA signals (in a single travelling light wave in the Hanle configuration or in a bichromatic light field consisted of two travelling waves), the proposed scheme allows one to use buffer gas to significantly enhance properties of the resonance. Also the dramatic influence of atomic transition openness on contrast of the resonance is revealed, that gives great advantage in comparison with cyclic atomic transitions. The obtained results can be interesting in high-resolution spectroscopy, nonlinear and magneto-optics.

  2. Structural characterisation of BaTiO{sub 3} thin films deposited on SrRuO{sub 3}/YSZ buffered silicon substrates and silicon microcantilevers

    SciTech Connect (OSTI)

    Colder, H.; Jorel, C., E-mail: corentin.jorel@unicaen.fr; Méchin, L. [GREYC, UMR 6072, CNRS, ENSICAEN, UCBN, 6 bd du Maréchal Juin, 14050 Caen Cedex (France); Domengès, B. [LAMIPS, CRISMAT-NXP Semiconductors-Presto Engineering laboratory, CNRS-UMR 6508, ENSICAEN, UCBN, 2 rue de la Girafe, 14 000 Caen (France); Marie, P.; Boisserie, M. [CIMAP, UMR 6252, CNRS, ENSICAEN, UCBN, CEA, 6 bd du Maréchal Juin, 14050 Caen Cedex (France); Guillon, S.; Nicu, L. [LAAS, CNRS, Univ de Toulouse, 7 avenue du Colonel Roche, 31400 Toulouse (France); Galdi, A. [GREYC, UMR 6072, CNRS, ENSICAEN, UCBN, 6 bd du Maréchal Juin, 14050 Caen Cedex (France); Department of Industrial Engineering, CNR-SPIN Salerno, Università di Salerno, 84084 Fisciano, Salerno (Italy)

    2014-02-07T23:59:59.000Z

    We report on the progress towards an all epitaxial oxide layer technology on silicon substrates for epitaxial piezoelectric microelectromechanical systems. (101)-oriented epitaxial tetragonal BaTiO{sub 3} (BTO) thin films were deposited at two different oxygen pressures, 5.10{sup ?2} mbar and 5.10{sup ?3} mbar, on SrRuO{sub 3}/Yttria-stabilized zirconia (YSZ) buffered silicon substrates by pulsed laser deposition. The YSZ layer full (001) orientation allowed the further growth of a fully (110)-oriented conductive SrRuO{sub 3} electrode as shown by X-ray diffraction. The tetragonal structure of the BTO films, which is a prerequisite for the piezoelectric effect, was identified by Raman spectroscopy. In the BTO film deposited at 5.10{sup ?2} mbar strain was mostly localized inside the BTO grains whereas at 5.10{sup ?3} mbar, it was localized at the grain boundaries. The BTO/SRO/YSZ layers were finally deposited on Si microcantilevers at an O{sub 2} pressure of 5.10{sup ?3} mbar. The strain level was low enough to evaluate the BTO Young modulus. Transmission electron microscopy (TEM) was used to investigate the epitaxial quality of the layers and their epitaxial relationship on plain silicon wafers as well as on released microcantilevers, thanks to Focused-Ion-Beam TEM lamella preparation.

  3. Search for Sub-eV Mass Solar Axions by the CERN Axion Solar Telescope with {sup 3}He Buffer Gas

    SciTech Connect (OSTI)

    Arik, M.; Cetin, S. A.; Ezer, C.; Yildiz, S. C. [Dogus University, Istanbul (Turkey); Aune, S.; Ferrer-Ribas, E.; Giomataris, I.; Papaevangelou, T. [IRFU, Centre d'Etudes Nucleaires de Saclay (CEA-Saclay), Gif-sur-Yvette (France); Barth, K.; Borghi, S.; Davenport, M.; Elias, N.; Haug, F.; Laurent, J. M.; Niinikoski, T.; Silva, P. S.; Stewart, L. [European Organization for Nuclear Research (CERN), Geneve (Switzerland); Belov, A.; Gninenko, S. [Institute for Nuclear Research (INR), Russian Academy of Sciences, Moscow (Russian Federation); Braeuninger, H. [Max-Planck-Institut fuer Extraterrestrische Physik, Garching (Germany)

    2011-12-23T23:59:59.000Z

    The CERN Axion Solar Telescope (CAST) has extended its search for solar axions by using {sup 3}He as a buffer gas. At T=1.8 K this allows for larger pressure settings and hence sensitivity to higher axion masses than our previous measurements with {sup 4}He. With about 1 h of data taking at each of 252 different pressure settings we have scanned the axion mass range 0.39 eV < or approx. m{sub a} < or approx. 0.64 eV. From the absence of excess x rays when the magnet was pointing to the Sun we set a typical upper limit on the axion-photon coupling of g{sub a}{gamma} < or approx. 2.3x10{sup -10} GeV{sup -1} at 95% C.L., the exact value depending on the pressure setting. Kim-Shifman-Vainshtein-Zakharov axions are excluded at the upper end of our mass range, the first time ever for any solar axion search. In the future we will extend our search to m{sub a} < or approx. 1.15 eV, comfortably overlapping with cosmological hot dark matter bounds.

  4. Band alignments of different buffer layers (CdS, Zn(O,S), and In{sub 2}S{sub 3}) on Cu{sub 2}ZnSnS{sub 4}

    SciTech Connect (OSTI)

    Yan, Chang; Liu, Fangyang; Song, Ning; Hao, Xiaojing, E-mail: xj.hao@unsw.edu.au [Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Ng, Boon K.; Stride, John A. [School of Chemistry, University of New South Wales, Sydney, New South Wales 2052 (Australia); Tadich, Anton [Australian Synchrotron, Melbourne, Victoria 3168 (Australia)

    2014-04-28T23:59:59.000Z

    The heterojunctions of different n-type buffers, i.e., CdS, Zn(O,S), and In{sub 2}S{sub 3} on p-type Cu{sub 2}ZnSnS{sub 4} (CZTS) were investigated using X-ray Photoelectron Spectroscopy (XPS) and Near Edge X-ray Absorption Fine Structure (NEXAFS) Measurements. The band alignment of the heterojunctions formed between CZTS and the buffer materials was carefully measured. The XPS data were used to determine the Valence Band Offsets (VBO) of different buffer/CZTS heterojunctions. The Conduction Band Offset (CBO) was calculated indirectly by XPS data and directly measured by NEXAFS characterization. The CBO of the CdS/CZTS heterojunction was found to be cliff-like with CBO{sub XPS}?=??0.24?±?0.10?eV and CBO{sub NEXAFS}?=??0.18?±?0.10?eV, whereas those of Zn(O,S) and In{sub 2}S{sub 3} were found to be spike-like with CBO{sub XPS}?=?0.92?±?0.10?eV and CBO{sub NEXAFS}?=?0.87?±?0.10?eV for Zn(O,S)/CZTS and CBO{sub XPS}?=?0.41?±?0.10?eV for In{sub 2}S{sub 3}/CZTS, respectively. The CZTS photovoltaic device using the spike-like In{sub 2}S{sub 3} buffer was found to yield a higher open circuit voltage (Voc) than that using the cliff-like CdS buffer. However, the CBO of In{sub 2}S{sub 3}/CZTS is slightly higher than the optimum level and thus acts to block the flow of light-generated electrons, significantly reducing the short circuit current (Jsc) and Fill Factor (FF) and thereby limiting the efficiency. Instead, the use of a hybrid buffer for optimization of band alignment is proposed.

  5. Oxidation of In2S3 films to synthetize In2S3(1-x)O3x thin films as a buffer layer in solar cells

    E-Print Network [OSTI]

    Boyer, Edmond

    Oxidation of In2S3 films to synthetize In2S3(1-x)O3x thin films as a buffer layer in solar cells S layers for solar cells. PACS : 68.55.ag Semiconductors, 68.55.J Morphology of films , 68.55.Nq for fabricating Cd-free CIGS solar cells [1, 2, 3]. One of its advantages is that it can be obtained from solution

  6. Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

    SciTech Connect (OSTI)

    Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo; Fin, Samuele; Guidi, Vincenzo; Vincenzi, Donato [University of Ferrara - Physics and Earth Science Department, Via Saragat 1, 44122 Ferrara (Italy)

    2014-09-26T23:59:59.000Z

    A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580°C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast –thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers.

  7. Buffer layers for coated conductors

    DOE Patents [OSTI]

    Stan, Liliana (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM); Foltyn, Stephen R. (Los Alamos, NM)

    2011-08-23T23:59:59.000Z

    A composite structure is provided including a base substrate, an IBAD oriented material upon the base substrate, and a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material. Additionally, an article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and a thick film upon the cubic metal oxide material. Finally, a superconducting article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and an yttrium barium copper oxide material upon the cubic metal oxide material.

  8. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States); Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menéndez, J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Aoki, Toshihiro [LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704 (United States)

    2014-10-07T23:59:59.000Z

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1–y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1–y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1–y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1–y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1–y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1–y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1–x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.

  9. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

    SciTech Connect (OSTI)

    Szyszka, A., E-mail: szyszka@ihp-microelectronics.com, E-mail: adam.szyszka@pwr.wroc.pl [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Lupina, L.; Lupina, G.; Schubert, M. A.; Zaumseil, P. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Haeberlen, M.; Storck, P.; Thapa, S. B. [Siltronic, Hanns-Seidel-Platz 4, 81737 München (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus-Senftenberg, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

    2014-08-28T23:59:59.000Z

    Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

  10. Yellow-green emission for ETS-LEDs and lasers based on a strainedInGaP quantum well heterostructure grown on a transparent, compositionally graded AlInGaP buffer

    E-Print Network [OSTI]

    Yellow-green emission for ETS-LEDs and lasers based on a strained­InGaP quantum well heterostructure grown on a transparent, compositionally graded AlInGaP buffer Lisa McGill, Juwell Wu, and Eugene phosphide (InGaP) quantum well on a transparent In0.22(Al0.2Ga0.8)0.78P/ x[Inx(Al0.2Ga0.8)1-xP]/GaP virtual

  11. Effect of conductive TiN buffer layer on the growth of stoichiometric VO{sub 2} films and the out-of-plane insulator–metal transition properties

    SciTech Connect (OSTI)

    Mian, Md. Suruz; Okimura, Kunio, E-mail: okifn@keyaki.cc.u-tokai.ac.jp [Graduate School of Science and Technology, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan)

    2014-07-15T23:59:59.000Z

    A TiN buffer film is used with a conductive interfacial layer for stoichiometric vanadium dioxide (VO{sub 2}) film growth, creating a layered device with a VO{sub 2} insulator–metal transition. Low-temperature growth (<250?°C) of the VO{sub 2} film on a Ti layer on a Si substrate is achieved using inductively coupled plasma-assisted sputtering. It is found that Ti diffusion and oxidation degrades the VO{sub 2} film quality at higher temperatures, but the introduction of a TiN buffer layer suppresses the degradation and enables growth of a stoichiometric VO{sub 2} film even at 400?°C. The high resistance of the VO{sub 2} film grown on the TiN layer suggests the benefit of using the intrinsic insulator–metal transition of VO{sub 2}. The voltage-triggered switching properties of the layered devices are examined, and the cause of the high out-of-plane resistance in this layered structure is discussed based upon the dependence of the initial resistance as a function the electrode area.

  12. Ferroelectric and ferromagnetic properties of epitaxial BiFeO{sub 3}-BiMnO{sub 3} films on ion-beam-assisted deposited TiN buffered flexible Hastelloy

    SciTech Connect (OSTI)

    Xiong, J., E-mail: jiexiong@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Los Alamos National Laboratory, Center for Integrated Nanotechnologies, Division of Materials Physics and Applications, Los Alamos, New Mexico 87545 (United States); Matias, V.; Jia, Q. X. [Los Alamos National Laboratory, Center for Integrated Nanotechnologies, Division of Materials Physics and Applications, Los Alamos, New Mexico 87545 (United States); Tao, B. W.; Li, Y. R. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2014-05-07T23:59:59.000Z

    Growth of multifunctional thin films on flexible substrates is of great technological significance since such a platform is needed for flexible electronics. In this study, we report the growth of biaxially aligned (BiFeO{sub 3}){sub 0.5}:(BiMnO{sub 3}){sub 0.5} [BFO-BMO] films on polycrystalline Hastelloy by using a biaxially aligned TiN as a seed layer deposited by ion-beam-assisted deposited and a La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) as a buffer layer deposited by pulsed laser deposition. The LSMO is used not only as a buffer layer but also as the bottom electrode of the BFO-BMO films. X-ray diffraction showed that the BFO-BMO films are biaxially oriented along both in-plane and out-of-plane directions. The BFO-BMO films on flexible metal substrates showed a polarization of 22.9??C/cm{sup 2}. The magnetization of the BFO-BMO/LSMO is 62?emu/cc at room temperature.

  13. National Marine Fisheries Service Southwest Region Habitat Conservation Division

    E-Print Network [OSTI]

    of Maintenance Dredge Project Area BMPs for turbidity control required Hydraulic Dredge, no overflow Sand (>80 of dredging activities Yes Dredging activities cease until turbidity dissipates No Modify dredging operation (reduced bucket deployment...etc.) Yes No N Eelgrass is present within 250 m buffer of Maintenance Dredge

  14. Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4} devices

    SciTech Connect (OSTI)

    Varley, J. B.; Lordi, V. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

    2014-08-14T23:59:59.000Z

    We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se){sub 2} (CIGS) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be less effective dopants. Substitutional In and Ga can favorably form complexes with cation vacancies (A-centers) which may contribute to the “red kink” effect observed in some CIGS-based devices. For CZTS absorbers, we find that Zn and Sn defects substituting on the buffer cation site are electrically inactive in n-type buffers and will not supplement the donor doping at the interface as in CIGS/CdS or ZnS devices. Sn may also preferentially incorporate on the S site as a deep acceptor in n-type ZnS, which suggests possible concerns with absorber-related interfacial compensation in CZTS devices with ZnS-derived buffers. Cu, Na, and K impurities are found to all have the same qualitative behavior, most favorably acting as compensating acceptors when substituting on the cation site. Our results suggest one beneficial role of K and Na incorporation in CIGS or CZTS devices is the partial passivation of vacancy-related centers in CdS and ZnS buffers, rendering them less effective interfacial hole traps and recombination centers.

  15. Universal null DTE (data terminal equipment)

    DOE Patents [OSTI]

    George, M.; Pierson, L.G.; Wilkins, M.E.

    1987-11-09T23:59:59.000Z

    A communication device in the form of data terminal equipment permits two data communication equipments, each having its own master clock and operating at substantially the same nominal clock rate, to communicate with each other in a multi-segment circuit configuration of a general communication network even when phase or frequency errors exist between the two clocks. Data transmitted between communication equipments of two segments of the communication network is buffered. A variable buffer fill circuit is provided to fill the buffer to a selectable extent prior to initiation of data output clocking. Selection switches are provided to select the degree of buffer preload. A dynamic buffer fill circuit may be incorporated for automatically selecting the buffer fill level as a function of the difference in clock frequencies of the two equipments. Controllable alarm circuitry is provided for selectively generating an underflow or an overflow alarm to one or both of the communicating equipments. 5 figs.

  16. The action mechanism of TiO{sub 2}:NaYF{sub 4}:Yb{sup 3+},Tm{sup 3+} cathode buffer layer in highly efficient inverted organic solar cells

    SciTech Connect (OSTI)

    Liu, Chunyu; Chen, Huan; Zhao, Dan; Shen, Liang; He, Yeyuan; Guo, Wenbin, E-mail: guowb@jlu.edu.cn, E-mail: chenwy@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, Jilin University, 2699 Qianjin Street, Changchun 130012 (China); Chen, Weiyou, E-mail: guowb@jlu.edu.cn, E-mail: chenwy@jlu.edu.cn [College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2014-08-04T23:59:59.000Z

    We report the fabrication and characteristics of organic solar cells with 6.86% power conversion efficiency (PCE) by doping NaYF{sub 4}:Yb{sup 3+},Tm{sup 3+} into TiO{sub 2} cathode buffer layer. The dependence of devices performance on doping concentration of NaYF{sub 4}:Yb{sup 3+},Tm{sup 3+} is investigated. Results indicate that short-circuit current density (J{sub sc}) has an apparent improvement, leading to an enhancement of 22.7% in PCE for the optimized doping concentration of 0.05?mmol ml{sup ?1} compared to the control devices. NaYF{sub 4}:Yb{sup 3+},Tm{sup 3+} nanoparticles (NPs) can play threefold roles, one is that the incident light in visible region can be scattered by NaYF{sub 4} NPs, the second is that solar irradiation in infrared region can be better utilized by Up-conversion effect of Yb{sup 3+} and Tm{sup 3+} ions, the third is that electron transport property in TiO{sub 2} thin film can be greatly improved.

  17. Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)

    SciTech Connect (OSTI)

    Ravikiran, L.; Radhakrishnan, K.; Agrawal, M. [NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)] [NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Dharmarasu, N.; Munawar Basha, S. [Temasek Laboratories, Nanyang Technological University, Singapore 637553 (Singapore)] [Temasek Laboratories, Nanyang Technological University, Singapore 637553 (Singapore)

    2013-09-28T23:59:59.000Z

    The effect of strain states of AlN/GaN-stress mitigating layer (SML) on buried crack density and its subsequent influence on the residual stresses in GaN buffer layers grown using ammonia-molecular beam epitaxy on 100-mm Si(111) substrate has been investigated. Different stages involved in the formation of buried cracks, which are crack initialization, growth of relaxed AlN layer, and subsequent lateral over growth, are identified using in-situ curvature measurements. While the increase of GaN thickness in AlN/GaN-SML enhanced its compressive strain relaxation and resulted in reduced buried crack spacing, the variation of AlN thickness did not show any effect on the crack spacing. Moreover, the decrease in the crack spacing (or increase in the buried crack density) was found to reduce the residual compression in 1st and 2nd GaN layers of AlN/GaN-SML structure. The higher buried crack density relaxed the compressive strain in 1st GaN layer, which further reduced its ability to compensate the tensile stress generated during substrate cool down, and hence resulted in lower residual compressive stress in 2nd GaN layer.

  18. U-236: Microsoft JScript and VBScript Engine Integer Overflow Lets Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    Execution of arbitrary code via network A remote user can cause arbitrary code to be executed on the target

  19. V-134: Cisco AnyConnect Secure Mobility Client Heap Overflow...

    Energy Savers [EERE]

    a fix. Addthis Related Articles T-635: Cisco AnyConnect Secure Mobility Client Lets Remote Users Execute Arbitrary Code and Local Users Gain Elevated Privileges U-196: Cisco...

  20. U-080: Linux Kernel XFS Heap Overflow May Let Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in the Linux Kernel. A remote user can cause arbitrary code to be executed on the target user's system.

  1. The Glass Won't Overflow If I Pour Slowly by Bill Menke, April 21, 2010

    E-Print Network [OSTI]

    Menke, William

    new sources of fossil fuel, before exploitation can start. Create new National Parks around coal deposits. Ratify treaties that prohibit deep-water oil drilling. Concentrate all effort on prizing those and carbon sequestration technology. Sure, the production of fossil fuels will slowly decrease, but it would

  2. V-134: Cisco AnyConnect Secure Mobility Client Heap Overflow Lets Local

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group current C3EDepartment ofPrivileges |Vulnerabilities |Microsoft pulls

  3. V-213: PuTTY SSH Handshake Integer Overflow Vulnerabilities | Department of

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy China 2015ofDepartment of Energy Microsoft SecurityEnergy SEARCH-LAB has reported

  4. Rapid screening buffer layers in photovoltaics

    DOE Patents [OSTI]

    List, III, Frederick Alyious; Tuncer, Enis

    2014-09-09T23:59:59.000Z

    An apparatus and method of testing electrical impedance of a multiplicity of regions of a photovoltaic surface includes providing a multi-tipped impedance sensor with a multiplicity of spaced apart impedance probes separated by an insulating material, wherein each impedance probe includes a first end adapted for contact with a photovoltaic surface and a second end in operable communication with an impedance measuring device. The multi-tipped impedance sensor is used to contact the photovoltaic surface and electrical impedance of the photovoltaic material is measured between individual first ends of the probes to characterize the quality of the photovoltaic surface.

  5. Making Fast Buffer Insertion Even Faster via

    E-Print Network [OSTI]

    Shi, Weiping "Peter"

    and A2 of the same branch, if Q(A1)Q(A2), C(A1)C(A2) and W(A1)W(A2), then A1 is redundant. Add a wire

  6. Understanding the Science Behind Riparian Forest Buffers

    E-Print Network [OSTI]

    Liskiewicz, Maciej

    , and reduce the costs to communities of water treat- ment, flooding, and dredging (Figure 1). However, plans cited were economic considerations (such as the availability of state cost-share, extra hay production

  7. Understanding the Science Behind Riparian Forest Buffers

    E-Print Network [OSTI]

    Liskiewicz, Maciej

    runoff from agricultural lands, urban areas, construction and industrial sites, and failed septic tanks, lakes, and estuar- ies are impaired by some form of water pollution (U.S. E.P.A. 1998). Pollutants can enter surface waters from point sources, such as single source industrial discharges and waste

  8. Competitive Parallel Disk Prefetching and Buffer Management

    E-Print Network [OSTI]

    Barve, Rakesh; Kallahalla, Mahesh; Varman, Peter J.; Vitter, Jeffrey Scott

    2000-01-01T23:59:59.000Z

    across the set a167 of a24 disks. A bad phase,a130a137a131a137a133a140a135a120a136a134a54a10a141a61a56 , with bad disk parameter a149a66a28 consists of blocks a142a72a68a50a143a51a144 , a141a61a25a146a145a97a147a102a148a124a54a61a141a34a94a168a104a39a56a...43a25 , laid out such that the first a25a169a163a15a25a170a81a66a64a51a55 a24 blocks a142a78a68 a143 a144 , where a141a61a25a146a145a97a147a102a148a124a54a10a141a80a94a69a104a19a56a153a25a171a163a172a25a170a81a66a64a51a55 a24 , are striped in a round...

  9. Sample Questions (1) Phosphate buffered saline (PBS) is a buffer solution commonly used in biological research.

    E-Print Network [OSTI]

    California at San Diego, University of

    as (3) with a mammalian cell (e.g. red blood cell (RBC)) (a) Write down the expression-potassium adenosine triphosphatase) is a Na+/K+ ion pump found in all animal cells. The pump moves 3 sodium ions out in biological research. It is a water-based salt solution containing sodium phosphate, sodium chloride and

  10. Mean steady granular force on a wall overflowed by free-surface gravity-driven dense flows

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    focused on the drag force on small obstacles such as cylinders in the case of rapid - dilute - granular and sharply increases the mean force at low incoming inertial numbers. A simple hydrodynamic model based this model, our study provides an example of the ability of simple hydrodynamic approaches to describe

  11. aqueous buffered solutions: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    different temperatures and determined the characteristic parameters for each adsorption isotherm. The adsorption process has been found endothermic in nature and thermodynamic...

  12. Modeling Buffers with Data Refresh Semantics in Automotive Architectures

    E-Print Network [OSTI]

    Pennsylvania, University of

    Automobiles. This is a longer version of the original paper published in the EM- SOFT 2010 proceedings, where not be lost and the history of transmission or ordering of data is important. Data streams containing incremen

  13. Use of GIS to Evaluate Riparian Buffers for Water Quality

    E-Print Network [OSTI]

    Clark, Shirley E.

    at Penn State Harrisburg Brett V. Long CE 455 Summer 2006 2 Project Overview - Hypothetical · A stream assessment study of the Penn State Harrisburg Campus's ephemeral stream found significant water quality

  14. THE ROLE OF BUFFER GASES IN OPTOAOOUSTIC SPECTROSCOPY

    E-Print Network [OSTI]

    Thomas III, L.J.

    2011-01-01T23:59:59.000Z

    at 160 Torr Temp. 22.5° C e Pwr. abs. -1.6mW o c: N I I enTorr c ~O""'"' Temp.21.2°C Pwr. abs. -1.6 mW a c: en N 0 p4 at 760 Torr Temp. 22.4ac Pwr. abs. · 2.6mW I I I I I I I o

  15. anode buffer layer: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    OLEDs have been fabricated using a new anode-cathode-layer (ACL) that connects light emitting diode (OLED) 1, much development has been made to improve this device for...

  16. STT-MRAM Based NoC Buffer Design

    E-Print Network [OSTI]

    Vikram Kulkarni, Nikhil

    2012-10-19T23:59:59.000Z

    and experience. I would like to thank my committee members, Dr. Rabi Mahapatra and Dr. Paul Gratz for their valuable feedback and advice. I would also like to thank my team members at High Performance Computing group especially Hyunjun Jang, Baik Song An... by ____________ This thesis follows style of IEEE Transaction on Very Large Scale Integration Systems. 2 2 scalability issues and whole idea of only one party talking at any given instant of time defeats the whole purpose of a high performance computing environment...

  17. Buffer Layer Assisted Laser Patterning of Metals on Surfaces

    E-Print Network [OSTI]

    Asscher, Micha

    power. In general, absorbed laser power density above 10 MW/cm2 should be avoided, to conserve* Department of Physical Chemistry, The Farkas Center for Light Induced Processes, The Hebrew Uni tool of metallic thin films on surfaces due to their strong binding and the extremely high laser power

  18. Blast overpressure relief using air vacated buffer medium

    E-Print Network [OSTI]

    Avasarala, Srikanti Rupa

    2009-01-01T23:59:59.000Z

    Blast waves generated by intense explosions cause damage to structures and human injury. In this thesis, a strategy is investigated for relief of blast overpressure resulting from explosions in air. The strategy is based ...

  19. STT-MRAM Based NoC Buffer Design 

    E-Print Network [OSTI]

    Vikram Kulkarni, Nikhil

    2012-10-19T23:59:59.000Z

    substantial power and area savings, near zero leakage power, and displays higher memory density compared to conventional SRAM. But STT-MRAM suffers from inherit drawbacks like multi cycle write latency and high write power consumption. So, these problem have...

  20. Quantification of the Effects of Organic and Carbonate Buffers on

    E-Print Network [OSTI]

    Sverjensky, Dimitri A.

    on a Goethite-Based Granular Porous Adsorbent M A S A K A Z U K A N E M A T S U , * , T H O M A S M . Y O U N G well characterized goethite-based adsorbent (Bayoxide E33 (E33)). All adsorption isotherms obtained calibrated using independent published carbonate adsorption data for pure goethite taking into consideration

  1. aqueous oxalate buffer: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and alternating current polarography of nitrobenzene in aqueous solutions and in acetonitrile. Open Access Theses and Dissertations Summary: ??The polarographic reduction of...

  2. Row Buffer Locality Aware Caching Policies for Hybrid Memories

    E-Print Network [OSTI]

    strengths · A hybrid memory system (DRAM-PCM) aims for best of both · Problem: How to place data between static energy (no refresh) 6 DRAM PCM CPU MC MC #12;Hybrid Memory · Design direction: DRAM as a cache memory devices? 8 DRAM PCM CPU MC MC #12;Outline · Background: Hybrid Memory Systems · Motivation: Row

  3. V-123: VMware ESX / ESXi libxml2 Buffer Underflow Vulnerability |

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group current C3EDepartment ofPrivileges | DepartmentDepartment

  4. agroforestry buffer grass: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Grass Species and Varieties for Bioenergy The use of warm-season grasses as an herbaceous energy crop.). Spartina sp. also have been investigated as a bioenergy crop in Europe...

  5. SMOOTH OIL & GAS FIELD OUTLINES MADE FROM BUFFERED WELLS

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1Stocks Nov-14 Dec-14Table 4.April19. AverageForecast ChangeThe VBA

  6. 20141029-Smitasin-Tierney-LBLnet-buffer-experiments.pptx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItemResearch >InternshipDepartment ofAugustDecember 2014 Fri,

  7. JOURNAL OF GEOPHYSICAL RESEARCH, VOL. 104,NO. Cll, PAGES 25,913-25,935,NOVEMBER 15, 1999 Overflow into the deep Caribbean: Effects of plume

    E-Print Network [OSTI]

    MacCready, Parker

    into the deep Caribbean: Effects of plume variability ParkerMacCready,1WilliamE.Johns,2ClaesG.Rooth,2DavidCaribbeanandtheAtlanticis overthe Jungfern-GrapplerSill complexat 1815m depth.Throughthesegapsflowsthesolesourceof waterforthedeepCaribbean Sv -- 106m3s-l) of Atlanticwatercolderthan0=-3.965øCflowingintothe Caribbean

  8. Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    the last quantum barrier in InGaN/GaN light-emitting diodes Zabu Kyaw, Zi-Hui Zhang, Wei Liu, Swee Tiam Tan injection and efficiency droop in InGaN/GaN light-emitting diodes with step-stage multiple- quantum distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers Appl. Phys. Lett. 102

  9. area upper engadine: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Niles; Adam Pease 2001-01-01 18 An Upper Bound on Overflow Probability in Transient Source Systems Engineering Websites Summary: An Upper Bound on Overflow Probability in...

  10. Automated Memory Allocation of Actor Code and Data Buffer in Heterochronous Dataflow Models to

    E-Print Network [OSTI]

    Dataflow (SDF) [1] and Finite State Machines (FSM). It is significantly more expressive than SDF since

  11. Impacts of Indirect Blocks on Buffer Cache Energy Efficiency Jianhui Yue, Yifeng Zhu

    E-Print Network [OSTI]

    Zhu, Yifeng

    - ing small but frequently accessed indirected blocks over all memory chips reduce the energy saving new scheme can save memory energy up to 16.8% and 15.4% in the I/O-intensive server workloads TPC in fewer energy saving opportunities through memory chip powerdown and DMA overlapping. · This paper

  12. Soil heterogeneity buffers community response to climate change in species-rich grassland

    E-Print Network [OSTI]

    Fridley, Jason D.

    potential, nitrogen supply, pH, and community biomass suggest that communities of shallow microsites, zSwiss Federal Institute for Forest, Snow and Landscape Research (WSL), Birmensdorf, Switzerland

  13. Smart buildings with electric vehicle interconnection as buffer for local renewables?

    E-Print Network [OSTI]

    Stadler, Michael

    2012-01-01T23:59:59.000Z

    and integrated in smart buildings Is it that simple or doesN ATIONAL L ABORATORY Smart buildings with electric vehicleopportunity employer. Smart buildings with electric vehicle

  14. On the Combined Input-Crosspoint Buffered Switch with Round-Robin Arbitration

    E-Print Network [OSTI]

    Rojas-Cessa, Roberto

    through. Therefore, the search for switch/router architectures with high performance and large capacity) Segmentation of incoming variable-size packets at the ingress side of a switch to perform internal switching, the performance of packet switches are con- strained by memory speed and the efficiency of the arbitration scheme

  15. An HIV Feedback-Resistor: Auto-Regulatory Circuit Deactivator and Noise Buffer

    E-Print Network [OSTI]

    Leor S. Weinberger; Thomas Shenk

    2007-01-09T23:59:59.000Z

    Many viruses have the cunning ability to enter a hibernative or off state, termed latency or lysogeny. When in a latent state, the virus is unable to replicate, and its gene expression program is largely shut down. This facility for lying dormant typically ensures lifelong persistence of the virus in the host; it is also a particularly problematic obstacle in the treatment of HIV. For most viruses, the molecular regulation of entry into latency is not completely understood, but it is believed that viral gene expression must be deactivated in some way. In this study, we introduce a new regulatory motif, the feedback resistor, that enables a genetic circuit to shut off without the need for an active repressor molecule. We first show that many animal viruses might encode feedback resistors in their regulatory circuits. Then, by using a combination of mathematical theory and single-cell real-time imaging experiments, we show that a feedback resistor in the HIV Tat transcriptional circuit likely allows the HIV virus to enter into latency. We postulate that feedback resistors may give increased stability and control in the complex noisy signaling environment of the cell.

  16. Splice site strength–dependent activity and genetic buffering by poly-G runs

    E-Print Network [OSTI]

    Xiao, Xinshu

    Pre-mRNA splicing is regulated through the combinatorial activity of RNA motifs, including splice sites and splicing regulatory elements. Here we show that the activity of the G-run (polyguanine sequence) class of splicing ...

  17. Should riparian buffers be part of forest management based on emulation of natural disturbance?

    E-Print Network [OSTI]

    Macdonald, Ellen

    , Brian Kotakd,4 a Department of Renewable Resources, University of Alberta, Edmonton, Alta., Canada T6G 2 Industries, Boyle, Alta., Canada T0A 0M0 Received 11 February 2003; received in revised form 8 April 2003.macdonald@ualberta.ca (E. Macdonald). 1 Present address: Department of Energy, Mines and Resources, Yukon Government, Box

  18. A non-blocking buffer mechanism for real-time event message communication

    E-Print Network [OSTI]

    Kim, KHK

    2006-01-01T23:59:59.000Z

    of time- constrained messages", IEEE Trans. on Computers,Mechanism for Real-Time Event Message Communicatoin K. H. (in facilitating state message communication from a producer

  19. Buffer insertion in large circuits using look-ahead and back-off techniques 

    E-Print Network [OSTI]

    Waghmode, Mandar

    2007-04-25T23:59:59.000Z

    G. Practicality . . . . . . . . . . . . . . . . . . . . . . . . . . 36 vii CHAPTER Page VII BOOSTER MODELING AND INSERTION . . . . . . . . . . . 37 A. Delay Models . . . . . . . . . . . . . . . . . . . . . . . . . 37 1. Single Booster... . . . . . . . . . . . . . . . . . . . . . . 39 2. Multiple Boosters . . . . . . . . . . . . . . . . . . . . 43 B. Insertion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 C. Experimental Results . . . . . . . . . . . . . . . . . . . . . 46 1. Single Booster...

  20. Smart buildings with electric vehicle interconnection as buffer for local renewables?

    SciTech Connect (OSTI)

    Stadler, Michael; Cardoso, Goncalo; DeForest, Nicholas; Donadee, Jon; Gomez, Tomaz; Lai, Judy; Marnay, Chris; Megel, Olivier; Mendes, Goncalo; Siddiqui, Afzal

    2011-05-01T23:59:59.000Z

    Some conclusions from this presentation are: (1) EV Charging/discharging pattern mainly depends on the objective of the building (cost versus CO{sub 2}); (2) performed optimization runs show that stationary batteries are more attractive than mobile storage when putting more focus on CO{sub 2} emissions because stationary storage is available 24 hours a day for energy management - it's more effective; (3) stationary storage will be charged by PV, mobile only marginally; and (4) results will depend on the considered region and tariff. Final research work will show the results for 138 different buildings in nine different climate zones and three major utility service territories.

  1. Minimum Buffered Routing with Bounded Capacitive Load for Slew Rate and Reliability Control

    E-Print Network [OSTI]

    Zelikovsky, Alexander

    with respect to hot-carrier oxide breakdown and AC self-heating in interconnects, and guarantees bounded input reliability with respect to hot-carrier oxide breakdown (hot electrons) [10], [12] and AC self-heating

  2. Fabrication of InGaP LEDs on a graded buffer substrate

    E-Print Network [OSTI]

    Martínez, Josué F

    2007-01-01T23:59:59.000Z

    Introduction: Computer display panels create a vast color palette by combining color from three light emitting diodes (LEDs), each producing red, green, or blue light. The light from these three LEDs is chosen so that the ...

  3. Original article Effects of buffer system pH and tissue storage

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    of allozymes in three tropical tree species PD Khasa WM Cheliak J Bousquet 1 Centre de Recherche en Biologie hydroxide- borate electrode, pH 8.5) and H7 (histidine-EDTA gel, pH 7.6: Tris-citrate electrode, pH 7

  4. Author's personal copy Evaluation of stainless steel cathodes and a bicarbonate buffer

    E-Print Network [OSTI]

    .0% based on adding known volumes of gas to the bag. Using the GBM, hydrogen production with SS and a BBS is an effective new method for measuring gas production of anaerobic gas production processes, and that SS production in microbial electrolysis cells using a new method for measuring gas production Jack R. Ambler

  5. Solar Axion search with Micromegas detectors in the CAST Experiment with $^{3}$He as buffer gas

    E-Print Network [OSTI]

    García, Juan Antonio

    2015-01-01T23:59:59.000Z

    Axions are well motivated particles proposed in an extension of the SM as a solution to the strong CP problem. Also, there is the category of Axion-Like Particles (ALPs) which appear in extensions of the SM and share the same phenomenology of the axion. Axions and ALPs are candidates to solve the Dark Matter problem. CAST, the CERN Axion Solar Telescope is looking for solar axions since 2003. CAST exploit the helioscope technique using a decommissioned LHC dipole magnet in which solar axions could be reconverted into photons. Three of the four detectors operating at CAST are of the Micromegas type. The analysis of the data of the three Micromegas detectors during the 2011 data taking campaign at CAST is presented in this thesis, obtaining a limit on the coupling constant of g$_{a \\gamma}$ < 3.90 $\\times$ 10$^{-10}$ GeV$^{-1}$ at a 95$\\%$ of confidence level, for axion masses from 1 to 1.17 eV. CAST Micromegas detectors exploit different strategies developed for the reduction of the background level. Moreov...

  6. East Boston buffer : a transferable urban framework for adapting to sea rise

    E-Print Network [OSTI]

    Jenkins, Carolyn (Carolyn Hiller)

    2013-01-01T23:59:59.000Z

    Urban vulnerability to climate change is constantly increasing. Many coastal cities will need to begin sea rise mitigation efforts soon, and now is a critical time for architects to intervene in this process with good ...

  7. auto-protective redox buffering: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Waters Outline: 1. Redox chemistry 2. Redox potential in aquatic systems 3. Eutrophication 4. Water treatment 1. Redox chemistry 15; Principle of equilibration of chemical...

  8. An Energy-Oriented Evaluation of Buffer Cache Algorithms Using Parallel I/O Workloads

    E-Print Network [OSTI]

    Zhu, Yifeng

    utilize these energy-aware devices. As we explore different management schemes under five real-world--Memory energy consumption, cache replacement algorithms, parallel I/O, cluster storage. Ã? 1 INTRODUCTION of power consumption. The energy breakdown measured on a real server shows that the memory energy

  9. The Impact of Transmit Buffer on EDCF with Frame-Bursting Option for Wireless Networks

    E-Print Network [OSTI]

    Selvadurai, Selvakennedy

    at homes, corporate building, campuses, airports and hot- spots. As these networks become more ubiquitous

  10. SEPARATION OF PROTEINS BY ION EXCHANGE AND MEMBRANE CHROMATOGRAPHY: BUFFER COMPOSITION, INTERFERING IMPURITIES AND FOULING CONSIDERATIONS

    E-Print Network [OSTI]

    Imam, Tahmina

    2010-01-16T23:59:59.000Z

    on identifying major impurity and optimization of solution properties for target protein purification. The second approach consisted of designing an adsorbent that interacted specifically with the target molecule. The first study included modification of protein...

  11. Buffer-gas-induced absorption resonances in Rb vapor RID B-9041-2008

    E-Print Network [OSTI]

    Mikhailov, E. E.; Novikova, I.; Rostovtsev, Y. V.; Welch, George R.

    2004-01-01T23:59:59.000Z

    density [57]: g?DsNd . uVdu2?ggrS 38pNl2LD?1/2. s25d Substituting the density of the resonant atoms given by Eq. (23) we obtain the resonance width: g?DsDd ~ uVdu2?ggr 1 ?NLe D2/2skud2 . s26d Figure 16 shows that this formula works only for a.... Scully for useful and stimulating discus- sions, and M. Klein for careful reading of the manuscript. Financial support is provided by the Office of Naval Re- search. [1] E. Arimondo and G. Orriols, Lett. Nuovo Cimento Soc. Ital. Fis. 17, 333 (1976...

  12. DC BUFFERING AND FLOATING CURRENT FOR A HIGH VOLTAGE IMB APPLICATION

    SciTech Connect (OSTI)

    J.L. Morrison

    2014-08-01T23:59:59.000Z

    An interface technique for the latest generation of the Impedance Measurement Box (IMB) has been conceived to enable measurement of impedance spectra for battery modules up to 300V. A 300V capable or higher IMB is an enabling technology for in-situ diagnostics within electric vehicle charging stations or battery back-ups within power distribution sub-stations. It is possible that the existing IMB can be adapted via a 300V interface module to a test battery with voltage significantly greater than 50V. Recently a new concept was conceived for the calibration, algorithm and electronics of the IMB. That algorithm and calibration for that concept have been physically validated. The principal feature of the new electronics is the floating current source excitation of the battery under test. The single ended current excitation of the battery under test, used in the 50V IMB, requires that the negative terminal of the test battery must be the analog ground for the IMB. The new floating current technique allows the test battery to be fully high impedance isolated for a measurement. That isolation will improve IMB noise immunity and enable interrogation of cells internal to a battery module. All these techniques still use the same rapid concept for impedance measurement with the IMB. The purpose of this disclosure is to provide an overview of the analytical validation for three concepts to interface the floating current excitation to a high voltage battery. Recursive simulation models were used in different test scenarios to validate the various new concepts. The analysis will show that it is possible to interface the floating signal current to obtain an impedance measurement on a high voltage test battery. Additionally, the analysis will investigate stress seen by electronics while testing a 300V battery.

  13. Control of Job Arrivals with Processing Time Windows into Batch Processor Buffer

    E-Print Network [OSTI]

    Tajan, John Benedict Cheng

    Consider a two-stage manufacturing system composed of a batch processor and its upstream feeder processor. Jobs exit the feeder processor and join a queue in front of the batch processor, where they wait to be processed. ...

  14. Smart buildings with electric vehicle interconnection as buffer for local renewables?

    E-Print Network [OSTI]

    Stadler, Michael

    2012-01-01T23:59:59.000Z

    utilization, ICE: internal combustion engine with waste heatlifetime: 10 years internal combustion engine with heat

  15. Unifier: Unifying Cache Management and Communication Buffer Management for PVFS over InfiniBand

    E-Print Network [OSTI]

    Panda, Dhabaleswar K.

    , and National Science Foundation's grants #EIA- 9986052, #CCR-0204429, and #CCR-0311542.¥ Work done whileBand Jiesheng Wu1 ¡ Pete Wyckoff2 Dhabaleswar Panda1 Rob Ross3 1 Computer and Information Science The Ohio State Columbus, OH 43212 pw@osc.edu 3 Mathematics and Computer Science Division Argonne National Laboratory

  16. Unifier: Unifying Cache Management and Communication Buffer Management for PVFS over InfiniBand

    E-Print Network [OSTI]

    Panda, Dhabaleswar K.

    , and National Science Foundation's grants #EIA- 9986052, #CCR-0204429, and #CCR-0311542.¥ Work done in partBand Jiesheng Wu1 ¡ Pete Wyckoff2 Dhabaleswar Panda1 Rob Ross3 1 Computer and Information Science The Ohio State Columbus, OH 43212 pw@osc.edu 3 Mathematics and Computer Science Division Argonne National Laboratory

  17. Buffer Sizing for Minimum Energy-Delay Product by Using an Approximating Polynomial

    E-Print Network [OSTI]

    Pedram, Massoud

    through a direct current path that is temporarily established during an output transition. Short circuit Figure 1: An inverter driving a capacitive load and electrical waveform showing short circuit current presents an accurate and efficient method of estimating the short circuit energy dissipation and the output

  18. Solar Axion search with Micromegas detectors in the CAST Experiment with $^{3}$He as buffer gas

    E-Print Network [OSTI]

    Garcia Pascual, Juan Antonio

    Axions are well motivated particles proposed in an extension of the Standard Model (SM) as a solution to the CP problem in strong interactions. On the other hand, there is the category of axion-like particles (ALPs) which appear in diverse extensions of the SM and share the same phenomenology of the axion. Axions and ALPs are hypothetical neutral particles that interact weakly with matter, being candidates to solve the Dark Matter problem. CAST, the CERN Axion Solar Telescope is looking for solar axions since 2003. CAST exploit the helioscope technique using a decommissioned LHC dipole magnet in which solar axions could be reconverted into photons. The magnet is mounted on a movable platform that allows tracking the Sun $\\sim$1.5 hours during sunset and during sunrise. The axion signal would be an excess of X-rays in the detectors located at the magnet bore ends and thus low background detectors are mandatory. Three of the four detectors operating at CAST are of the Micromegas type. The analysis of the data o...

  19. Fully-depleted Strained-Si on Insulator NMOSFETs without Relaxed SiGe Buffers

    E-Print Network [OSTI]

    by wafer bonding and Smart-cut processes, is utilized for the first time to make strained-Si on insulator germanium diffusion into the strained Si, formation of low-resistance silicide and altered dopant diffusion SiGe is transferred by wafer bonding and Smart- cut to a BPSG layer, and during annealing the Si

  20. Smart buildings with electric vehicle interconnection as buffer for local renewables?

    E-Print Network [OSTI]

    Stadler, Michael

    2012-01-01T23:59:59.000Z

    N ATIONAL L ABORATORY Smart buildings with electric vehicleopportunity employer. Smart buildings with electric vehicleand integrated in smart buildings Is it that simple or does

  1. Evaluation of the Effective Moisture Penetration Depth Model for Estimating Moisture Buffering in Buildings

    SciTech Connect (OSTI)

    Woods, J.; Winkler, J.; Christensen, D.

    2013-01-01T23:59:59.000Z

    This study examines the effective moisture penetration depth (EMPD) model, and its suitability for building simulations. The EMPD model is a compromise between the simple, inaccurate effective capacitance approach and the complex, yet accurate, finite-difference approach. Two formulations of the EMPD model were examined, including the model used in the EnergyPlus building simulation software. An error in the EMPD model we uncovered was fixed with the release of EnergyPlus version 7.2, and the EMPD model in earlier versions of EnergyPlus should not be used.

  2. Energy-aware Cross-layer Burst Buffering for Wireless Communication

    E-Print Network [OSTI]

    energy-efficient hardware and batteries in the longer run, we believe there is still a need for carefully

  3. Smart buildings with electric vehicle interconnection as buffer for local renewables?

    E-Print Network [OSTI]

    Stadler, Michael

    2012-01-01T23:59:59.000Z

    power (CHP), PV, solar thermal, stationary battery, etc. isstationary battery • stationary batteries charged by PV • noDavis PV: photovoltaic, BS: conventional lead acid battery,

  4. Successive structuring of source coding algorithms for data fusion, buffering, and distribution in networks

    E-Print Network [OSTI]

    Draper, Stark Christiaan

    2002-01-01T23:59:59.000Z

    Numerous opportunities to improve network performance present themselves when we make communication networks aware of the characteristics of the data content they are handling. In this thesis, we design such content-aware ...

  5. THE LIMITS OF BUFFERING: A TIGHT LOWER BOUND FOR DYNAMIC MEMBERSHIP IN THE EXTERNAL MEMORY MODEL

    E-Print Network [OSTI]

    Zhang, Qin

    . Our result holds even when the updates and queries are chosen uniformly at random and there are no deletions; it holds for randomized data structures, holds when the universe size is O(n), and does not make any restrictive assumptions such as indivisibility. All of the lower bounds we prove hold regardless

  6. Dynamic Channel Flow Control of Networks-on-Chip Systems for High Buffer

    E-Print Network [OSTI]

    Hung, Shih-Hao

    resource sharing globally, which can increase the throughput and the channel utilization rate. An 8 x 8

  7. PBD: Packet Buffer DVFS Eyal-Itzhak Nave and Ran Ginosar

    E-Print Network [OSTI]

    Ginosar, Ran

    and less heat dissipation, while data centers growth (as a result of cloud computing architectures, web consumption of networked systems approaches 150 TWh, with an associated cost of around 15 billion dollars databases and social network) struggle with challenges of cooling the data center and lowering electricity

  8. Buffer Requirements at ECN-Capable RED Gateways to Minimize Packet Losses

    E-Print Network [OSTI]

    Minnesota, University of

    Honeywell Labs 3660 Technology Drive Minneapolis, MN 55418, USA E-mail: haowei.bai@honeywell.com Department

  9. Adaptive Buffer Management for Efficient Code Dissemination in Multi-Application Wireless Sensor Networks

    E-Print Network [OSTI]

    Zhang, Youtao

    for many applications such as patient monitoring in hospitals, and wildfire detection in forests [3]. While be exploited for monitor- ing both wildfire and animals' migration habits. While a single sensor may still run monitoring needs. MA-WSNs have many advantages over SA-WSNs. As an example, a MA-WSN adapts better

  10. High rate buffer layer for IBAD MgO coated conductors

    DOE Patents [OSTI]

    Foltyn, Stephen R. (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM); Arendt, Paul N. (Los Alamos, NM)

    2007-08-21T23:59:59.000Z

    Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.

  11. MinimumBuffered Routing of NonCritical Nets for Slew Rate and Reliability Control

    E-Print Network [OSTI]

    Zelikovsky, Alexander

    with respect to hot­carrier oxide breakdown and AC self­heating in interconnects, and guarantees bounded input) [9, 11] and AC self­heating in intercon­ nects [20], and facilitate technology migration since, bounding the load capacitance at gate outputs is a well­known part of today's electrical correctness method

  12. Minimum Buffered Routing with Bounded Capacitive Load for Slew Rate and Reliability Control

    E-Print Network [OSTI]

    Zelikovsky, Alexander

    reliability with respect to hot­carrier oxide breakdown and AC self­heating in interconnects, and guarantees electrons) [10], [12] and AC self­heating in interconnects [20], and facilitate technology migration since capacitance at gate outputs is a well­known part of today's electrical correctness methodologies. Bounds

  13. Buffer-gas-induced absorption resonances in Rb vapor RID B-9041-2008 

    E-Print Network [OSTI]

    Mikhailov, E. E.; Novikova, I.; Rostovtsev, Y. V.; Welch, George R.

    2004-01-01T23:59:59.000Z

    density [57]: g?DsNd . uVdu2?ggrS 38pNl2LD?1/2. s25d Substituting the density of the resonant atoms given by Eq. (23) we obtain the resonance width: g?DsDd ~ uVdu2?ggr 1 ?NLe D2/2skud2 . s26d Figure 16 shows that this formula works only for a.... Scully for useful and stimulating discus- sions, and M. Klein for careful reading of the manuscript. Financial support is provided by the Office of Naval Re- search. [1] E. Arimondo and G. Orriols, Lett. Nuovo Cimento Soc. Ital. Fis. 17, 333 (1976...

  14. Ribozyme-based insulator parts buffer synthetic circuits from genetic context

    E-Print Network [OSTI]

    Lou, Chunbo

    Synthetic genetic programs are built from circuits that integrate sensors and implement temporal control of gene expression. Transcriptional circuits are layered by using promoters to carry the signal between circuits. In ...

  15. Smart buildings with electric vehicle interconnection as buffer for local renewables?

    E-Print Network [OSTI]

    Stadler, Michael

    2012-01-01T23:59:59.000Z

    energy systems design considering storage technologies,”storage- viability-website Environmental Energy Technologies

  16. Smart buildings with electric vehicle interconnection as buffer for local renewables?

    E-Print Network [OSTI]

    Stadler, Michael

    2012-01-01T23:59:59.000Z

    Judy Lai, and Vincent Battaglia: “The added economic andMarnay, and Vincent Battaglia: “Plug-in Electric Vehicle

  17. Smart buildings with electric vehicle interconnection as buffer for local renewables?

    E-Print Network [OSTI]

    Stadler, Michael

    2012-01-01T23:59:59.000Z

    lifetime: 10 years internal combustion engine with heatutilization, ICE: internal combustion engine with waste heat

  18. A single-phase photovoltaic inverter topology with a series-connected power buffer

    E-Print Network [OSTI]

    Pierquet, Brandon J.

    Module integrated converters (MICs) have been under rapid development for single-phase grid-tied photovoltaic applications. The capacitive energy storage implementation for the double-line-frequency power variation represents ...

  19. A Single-Phase Photovoltaic Inverter Topology With a Series-Connected Energy Buffer

    E-Print Network [OSTI]

    Pierquet, Brandon J.

    Module integrated converters (MICs) have been under rapid development for single-phase grid-tied photovoltaic applications. The capacitive energy storage implementation for the double-line-frequency power variation represents ...

  20. STEM Exploration Sessions filled on a first come basis. Overflow may sign up for later sessions at activity location. Four ways to participate: Scheduled Activites (S); Drop-in (D); Open Demonstrations (O); Interactive Science Shows(I)

    E-Print Network [OSTI]

    Barrash, Warren

    ); Interactive Science Shows(I) - Making Waves with LIGO ­ LIGO Hanford Observatory (O) - Hewlett Packard (O) - DiveCommander.com - Control a Remote Operated Vehicle (O) Kinesiology Building ­ EXPO ­ Open Demonstrations for ALL AGES Student Union Building (SUB) ­ Food Vendors Chick Filet, Subway, Moxie, Boise River

  1. Figure 1. Typical Slow Sand Filter Schematic Supernatant Water

    E-Print Network [OSTI]

    Figure 1. Typical Slow Sand Filter Schematic Headspace Supernatant Water Schmutzdecke Raw water Supernatant drain Filter drain & backfill Sand media Support gravel Drain tile Adjustable weir Overflow weir Vent Control valve Treated Water Effluent flow control structure Overflow Assessing Temperature

  2. Control of the specific growth rate of Bacillus subtilis for the production of biosurfactant lipopeptides in bioreactors with foam

    E-Print Network [OSTI]

    Boyer, Edmond

    lipopeptides in bioreactors with foam overflow S. CHENIKHERa , J. S. GUEZb , F. COUTTE b , M. PEKPEa , P

  3. High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy

    E-Print Network [OSTI]

    2003-01-01T23:59:59.000Z

    20, 1117 ?1991?. M. W. Wanlass, J. J. Carapella, A. Duda, K.Rev. 3, 77 ?1999?. M. W. Wanlass, J. S. Ward, K. A. Emery,

  4. Renesting Single Appearance Schedules to Minimize Buffer Memory Shuvra S. Bhattacharyya, Praveen K. Murthy, and Edward A. Lee

    E-Print Network [OSTI]

    that schedules SDF graphs into minimum code size loop hierarchies. On several practical examples, we demonstrate that are based on the synchro- nous dataflow (SDF) model [10]. Numerous DSP design environments, including a number of commercial tools, support SDF or closely related models [9, 14, 13, 15, 16]. In SDF1, a program

  5. IEEE TRANSACTIONS ON COMMUNICATIONS, VOL. 53, NO. 11, NOVEMBER 2005 1945 On the Combined Input-Crosspoint Buffered

    E-Print Network [OSTI]

    Chao, Jonathan

    with high-speed ports and to provide high-performance switching. BX switches were originally considered. Therefore, the search for switch/router architectures with high performance and large capacity persists of incoming variable-size packets at the ingress side of a switch to perform internal switching with fixed

  6. Brewster Angle Microscopy Study of Model Lung Surfactant Systems at the Air-Water and Air-Physiological Buffer Interfaces

    E-Print Network [OSTI]

    Brewster Angle Microscopy Study of Model Lung Surfactant Systems at the Air-Water and Air. Olesik #12;Copyright by Hardy Zingalaoa Castada 2010 #12;ii ABSTRACT The lungs have the ability to function normally due to its physiological and molecular components. In the lungs, air is delivered

  7. An Intelligent Solar Powered Battery Buffered EV Charging Station with Solar Electricity Forecasting and EV Charging Load Projection Functions

    E-Print Network [OSTI]

    Zhao, Hengbing; Burke, Andrew

    2014-01-01T23:59:59.000Z

    fast charging, and solar power availability pose a challengeevent to a fixed SOC from solar power and/or the grid in athem without considering solar power availability and the

  8. Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer

    E-Print Network [OSTI]

    .1063/1.4789855] The toxicity of Cd and the scarcity of Te, In, and Ga used in CdTe and Cu(In,Ga)S2 (CIGS) thin-film solar cellsEnhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfideS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made

  9. Fabrication of Sr silicate buffer layer on Si(100) substrate by pulsed laser deposition using a SrO target

    SciTech Connect (OSTI)

    Imanaka, Atsuhiro; Sasaki, Tsubasa [Department of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Hotta, Yasushi, E-mail: hotta@eng.u-hyogo.ac.jp; Satoh, Shin-ichi [Department of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan and CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan)

    2014-09-01T23:59:59.000Z

    The authors fabricated 2?×?1 Sr-reconstructed Si(100) substrates using thin SrO layers, and used them to direct growth of crystalline perovskite oxide on Si. The SrO layers used to reconstruct the Si(100) substrates were grown by pulsed laser deposition from a SrO single crystal target, followed by postdeposition-annealing (PDA) of the SrO/Si(100) structure. In situ observations of reflective high-energy electron diffraction during PDA confirmed a 2?×?1 reconstruction of the Si surface and x-ray photoemission spectroscopy of the annealed samples confirmed the existence of Sr atoms in a silicate phase, which indicated that a 2?×?1 Sr-reconstructed Si surface was achieved. The optimal fabrication conditions were annealing at 720?°C for 1?min and an equivalent SrO layer thickness (ML{sub eq}) of 2.5 ML{sub eq}. The temperature condition was very narrow, at 720?±?20?°C, for an acceptable product. Subsequently, the authors demonstrated the growth of crystalline SrTiO{sub 3} films on the 2?×?1 Sr-reconstructed Si(100) surfaces.

  10. The effects of Ta2O5ZnO films as cathodic buffer layers in inverted polymer solar cells

    E-Print Network [OSTI]

    Cao, Guozhong

    in power conversion efficiency. Introduction Organic photovoltaic (OPV) devices have attracted signicant.e. a rapid performance degradation due to the low work function top metal electrode, and an unstable interface between the ITO substrate and HTL;17­19 such a rapid performance degradation is unacceptable

  11. European PVSECE Glasgow, Scotland 2000 III-V SPACE SOLAR CELLS ON Si SUBSTRATES USING GRADED GeSi BUFFERS

    E-Print Network [OSTI]

    As directly grown on Si, rendering the GaAs useless as a photovoltaic material. Nevertheless, many groups have, this dislocation density has still limited the minority carrier lifetimes obtained to ~ 1-3 ns, even after hydrogen

  12. Improving Direct-Mapped Cache Performance by the Addition of a Small Fully-Associative Cache and Prefetch Buffers

    E-Print Network [OSTI]

    Martin, Milo M. K.

    ,a cachemiss on a VAX 1l/780 only costs60%of the averageinstruc- tion execution. Thus even if every instruction) (cycles) (in&r) ------------------------------------------------ vAx11/760 10.0 200 1200 6 .6 WRL Titan 1

  13. Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface

    E-Print Network [OSTI]

    Zhao, Haoyang; Tong, Peiqian; Cui, Yanxia; Hao, Yuying; Sun, Qinjun; Shi, Fang; Zhan, Qiuqiang; Wang, Hua; Zhu, Furong

    2015-01-01T23:59:59.000Z

    The performance of organic solar cells (OSCs) can be greatly improved by incorporating silica-coated gold nanorods (Au@SiO2 NRs) at the interface between the hole transporting layer and the active layer due to the plasmonic effect. The silica shell impedes the aggregation effect of the Au NRs in ethanol solution as well as the server charge recombination on the surface of the Au NRs otherwise they would bring forward serious reduction in open circuit voltage when incorporating the Au NRs at the positions in contact with the active materials. As a result, while the high open circuit voltage being maintained, the optimized plasmonic OSCs possess an increased short circuit current, and correspondingly an elevated power conversion efficiency with the enhancement factor of ~11%. The origin of performance improvement in OSCs with the Au@SiO2 NRs was analyzed systematically using morphological, electrical, optical characterizations along with theoretical simulation. It is found that the broadband enhancement in abso...

  14. Characterising the secondary structure changes occurring in high density systems of BLG dissolved in aqueous pH 3 buffer

    E-Print Network [OSTI]

    Ioannou, J. C.; Donald, A. M.; Tromp, R. H.

    2014-12-31T23:59:59.000Z

    to be structured by adding starch and/or oil. Therefore, in-depth knowledge of protein folding/unfolding which can relate to the hydration and solubility of food proteins at high concentrations (e.g. as in the mouth during consumption) is also very important...

  15. Effect of calcium buffers and whole plant processing methods on starch digestibility of sorghum based diets in Holstein cows

    E-Print Network [OSTI]

    Fernandez, John Anthony

    1980-01-01T23:59:59.000Z

    the first trimester of lactation when milk production was at its peak, they (10) found that the highest energy intake was in the second trimester probably due to an effort to regain energy balance. The depression in ration digestibility on high producing... to 79 g per cow per day compared to losses of 502 to 1164 g per cow per day at intakes of 2. 5 to 3. 2 multiples of maintenance, respectively. Depression in starch digestibility accounted for 34. 2, 33. 4, 41. 2 and 50. 2% of the total depression...

  16. An Intelligent Solar Powered Battery Buffered EV Charging Station with Solar Electricity Forecasting and EV Charging Load Projection Functions

    E-Print Network [OSTI]

    Zhao, Hengbing; Burke, Andrew

    2014-01-01T23:59:59.000Z

    solar insolation and the solar panel characteristics. Theinsolation on the assigned solar panel for a clear sky wassolar insolation on the solar panel varies with the change

  17. DISTRIBUTION OF LANTHANIDE AND ACTINIDE ELEMENTS BETWEEN BIS-(2-ETHYLHEXYL)PHOSPHORIC ACID AND BUFFERED LACTATE SOLUTIONS CONTAINING SELECTED COMPLEXANTS

    SciTech Connect (OSTI)

    Rudisill, Tracy S.; Diprete, David P.; Thompson, Major C.

    2013-04-15T23:59:59.000Z

    With the renewed interest in the closure of the nuclear fuel cycle, the TALSPEAK process is being considered for the separation of Am and Cm from the lanthanide fission products in a next generation reprocessing plant. However, an efficient separation requires tight control of the pH which likely will be difficult to achieve on a large scale. To address this issue, we measured the distribution of lanthanide and actinide elements between aqueous and organic phases in the presence of complexants which were potentially less sensitive to pH control than the diethylenetriaminepentaacetic (DTPA) used in the process. To perform the extractions, a rapid and accurate method was developed for measuring distribution coefficients based on the preparation of lanthanide tracers in the Savannah River National Laboratory neutron activation analysis facility. The complexants tested included aceto-, benzo-, and salicylhydroxamic acids, N,N,N',N'-tetrakis(2-pyridylmethyl)ethylenediamine (TPEN), and ammonium thiocyanate (NH{sub 4}SCN). The hydroxamic acids were the least effective of the complexants tested. The separation factors for TPEN and NH{sub 4}SCN were higher, especially for the heaviest lanthanides in the series; however, no conditions were identified which resulted in separations factors which consistently approached those measured for the use of DTPA.

  18. LACL technical report number 2001-04. c 2001 F. Pommereau and C. Stehno. FIFO buffers in hot tie sauce

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    reflects whether it is an entry, an internal or an exit place. An M-net is initially marked by its entry, tokens are expected to flow from the entry places to the exit ones. A transition t is labelled marking, in which entry places hold one token from their type and the other places are unmarked. Then

  19. 1628 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 19, NO. 20, OCTOBER 15, 2007 Room-Temperature Operation of Buffer-Free

    E-Print Network [OSTI]

    Jalali. Bahram

    development of hybrid As-Sb VCSELs, avalanche photodiodes, and photonic integrated circuits. II. DEVICE DESIGN that require emitters operating beyond standard fiber-based communication wavelengths (1.55 m) such as carbon (CHTM), University of New Mexico (UNM), Albuquerque, NM 87106 USA (e-mail: huffaker

  20. Effect of calcium buffers and whole plant processing methods on starch digestibility of sorghum based diets in Holstein cows 

    E-Print Network [OSTI]

    Fernandez, John Anthony

    1980-01-01T23:59:59.000Z

    in the regrowth sorghum silage diet. This study provides evidence that several procedures will increase starch digestibility in sorghum based diets fed to lactating dairy cows. ACKNOWLEDGEMENTS The author wishes to express his most sincere and deepest grati... 110 viii LIST OF TABLES Table Page Composition of the four concentrates Nutrient composition of feeds of Experiment 1 Mineral analysis of feeds of Experiment 1 . 21 32 33 Feed intake and digestibility for lactating cows in Experiment 1 . 35...

  1. Cross-Section Designs for the Safety Performance of Buffer-Separated High-Occupancy Vehicle (HOV) lanes

    E-Print Network [OSTI]

    Jang, Kitae; Kang, Sanghyeok; Seo, Jongwon; Chan, Ching-Yao

    2011-01-01T23:59:59.000Z

    for Internalization. Accident Analysis and Prevention, Vol.fit and theory, Accident Analysis and Prevention, Vol. 37(binomial regressions, Accident Analysis and Prevention, Vol.

  2. Current-Feedback Op Amp Analysis Literature Number SLOA080

    E-Print Network [OSTI]

    Papavassiliou, Christos

    buffer provides low output impedance for the amplifier. Again, the output buffer gain, GOUT, is very

  3. RAW MATERIALS EVALUATION AND PROCESS DEVELOPMENT STUDIES FOR CONVERSION OF BIOMASS TO SUGARS AND ETHANOL

    E-Print Network [OSTI]

    Wilke, C.R.

    2011-01-01T23:59:59.000Z

    first stage. passed through a centrifuge to the first stage.A portion of the centrifuge underflow is filtered and theunnecessary because The centrifuge overflow will contain a

  4. affects symbiotic effectivenes: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to symbiotic binaries is the process of mass transfer - Roche lobe overflow or stellar wind - and possibility of an accretion disc formation. The presence of secondary minima in...

  5. Plastic, the Great Pacific Garbage Patch, and International Misfires at a Cure

    E-Print Network [OSTI]

    Harse, Grant A.

    2011-01-01T23:59:59.000Z

    domestic water quality and solid waste disposal laws inquantity generator waste, and industrial solid waste. 197sewer overflows, lit- tering, solid waste disposal sites and

  6. Storage and IO Technology

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Burst Buffer User Defined Images Archive Home R & D Storage and IO Technologies Storage and IO Technologies Burst Buffer NVRAM and Burst Buffer Use Cases In collaboration...

  7. Neutrino Factory Mercury Flow Loop

    E-Print Network [OSTI]

    McDonald, Kirk

    ­ Could require double containment of mercury ­ Chase will certainly have a drain back into hot cell Decay 2010 #12;Hg Flow Overflow · Minimize pressure drops through piping Overflow Mercury Drain drops Gravity Drain Beam Dumptransitioning to 1 cm nozzle · Actual NF Hg inventory may reach SNS Gravity Drain

  8. Non-touch thermal air-bearing shaping of x-ray telescope optics Edward Sung*a

    E-Print Network [OSTI]

    , melted glass overflows the edges of a triangular prism-shaped trough, which points downward. The overflowing glass travels down both sides of the trough and fuses at the bottom edge [3][4]. Although-Hartmann metrology tool, we found the glass to have a cylindrical bow with a peak-to-valley (P-V) of larger than 30

  9. Biogeochemical Processes in a Clay Formation In-situ Experiment: Part B Results from overcoring and evidence of strong buffering by the

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    2 Biogeochemical Processes in a Clay Formation In-situ Experiment: Part B ­ Results from overcoring in the Opalinus Clay formation was carried out at the Mont Terri underground rock laboratory (Jura Mountains/precipitation reactions. After five years, the 4.5 m long vertical test interval was overcored and Opalinus clay samples

  10. Using fluid buffering equilibria to determine values of H?O activity: an example from the amphibole-bearing spinel lherzolites of Caussou, French Pyrenees 

    E-Print Network [OSTI]

    Petko, Craig Edward

    2001-01-01T23:59:59.000Z

    Samples were collected from the Caussou peridotite in the French Pyrenees. This peridotite represents a portion of the Earth's upper mantle. These samples contain the minerals olivine, clinopyroxene, orthopyroxene, and amphibole. Therefore, the H...

  11. Large negative and positive delay of optical pulses in coherently prepared dense Rb vapor with buffer gas RID B-9041-2008

    E-Print Network [OSTI]

    Mikhailov, E. E.; Sautenkov, V. A.; Novikova, I.; Welch, George R.

    2004-01-01T23:59:59.000Z

    ). [32] I. Novikova and G. R. Welch, J. Mod. Opt. 49, 349 (2002). [33] J. Vanier, A. Godone, and F. Levi, Phys. Rev. A 58, 2345 (1998). [34] J. Kitching, S. Knappe, and L. Hollberg, Appl. Phys. Lett. 81, 553 (2002). [35] M. Merimaa, T. Lindvall, I... (2003). [5] A. V. Turukhin, V. S. Sudarshanam, M. S. Shahriar, J. A. Musser, B. S. Ham, and P. R. Hemmer, Phys. Rev. Lett. 88, 023602 (2002). [6] F. L. Kien and K. Hakuta, Can. J. Phys. 78, 543 (2000). [7] J. Q. Liang, M. Katsuragawa, F. L. Kien...

  12. Incorporation of a QM/MM Buffer Zone in the Variational Double Self-Consistent Field Wangshen Xie, Lingchun Song, Donald G. Truhlar,* and Jiali Gao*

    E-Print Network [OSTI]

    Minnesota, University of

    -structure-based polarization force field, designed for molecular dynamics simulations and modeling of biopolymers in molecular dynamics simulations of large systems such as a solvated protein. Consequently, approximations function of each fragment in the presence of the instantaneous electric field from the rest of the system

  13. Using fluid buffering equilibria to determine values of H?O activity: an example from the amphibole-bearing spinel lherzolites of Caussou, French Pyrenees

    E-Print Network [OSTI]

    Petko, Craig Edward

    2001-01-01T23:59:59.000Z

    . Pyroxene formulae were normalized to four cations with Fe 3 + inferred from charge balance, Fe 3 +=Al I V-Al V I-2Ti+Na. Olivine formulae were normalized to 3 cations with the assumption that all Fe was present as Fe 2 +. Spinel formulae were normalized... to 3 cations with Fe3+=2+2Si+Al+2Ti+Cr. Amphibole formulae were normalized to 13 cations ( M l , M2, M3, and IV sites), with Fe 3 + =Al I V -Al V I -2Ti-Na A -K A +Na M 4 , although the effects of other normalization schemes was also considered...

  14. Ye et al. VOL. 3, NO. 8/AUGUST 2011/J. OPT. COMMUN. NETW. A59 Buffering and Flow Control in Optical

    E-Print Network [OSTI]

    Kolner, Brian H.

    Switches for High Performance Computing Xiaohui Ye, Roberto Proietti, Yawei Yin, S. J. B. Yoo power consumption in high performance computing applications has sparked an interest in optical switches. In this paper, high performance computing refers to both traditional scientific computing and emerging warehouse

  15. Proc. the 24th Annual ACM Symposium on Applied Computing, March 2009. DARAW: A New Write Buffer to Improve Parallel I/O Energy-Efficiency

    E-Print Network [OSTI]

    Qin, Xiao

    on the reliability of parallel I/O systems. Third, numerous power-state transitions impose significant energy, energy dissipation in the storage system may not necessarily be reduced. This is due the fact that power data centers today employ huge quantities of I/O systems, which consume a large amount of energy. Most

  16. Chalcogenide Letters Vol. 9, No. 4, April 2012, p. 157 -163 IMPACT OF THE MORPHOLOGY OF TiO2 FILMS AS CATHODE BUFFER

    E-Print Network [OSTI]

    Cao, Guozhong

    , 2012) 1. Introduction Polymer solar cells (or organic photovoltaic) are devices that are based from both cathode degradation in view of their sensitivity to the oxygen and moisture in air and anode degradation due to the etching of PEDOT to ITO film. Therefore, these devices exhibit short lifetimes. 10

  17. This paper focuses on how to design a Store Buffer (STB) well suited to first-level multibanked data caches. Our goal

    E-Print Network [OSTI]

    Zaragoza, Universidad de

    - level STB, and ii) not checking instruction age in first-level STB prior to forwarding data to loads. Following our guidelines and running SPECint-2K over an 8-way out-of- order processor, a two-level STB

  18. 16 au Spring 2012 esri.com Areas of concern defined by ZIP Code Water quality monitoring station and hydro buffers

    E-Print Network [OSTI]

    Short, Daniel

    on implementing best management practices on livestock farms and mitigating failing septic systems. [Nonpoint landowners whose land-use practices might be contributing to the impair- ment of water bodies in the Catawba and are generally carried off the land by storm water. According to the EPA, a TMDL "is the amount of a single

  19. buffer Layer Growth, the Thickness Dependence of Jc in Coated Conductors, Local Identification of Current Limiting Mechanisms and Participation in the Wire Development Group

    SciTech Connect (OSTI)

    Larbalestier, David; Hellstron, Eric; Abraimov, Dmytro

    2011-12-17T23:59:59.000Z

    The primary thrusts of our work were to provide critical understanding of how best to enhance the current-carrying capacity of coated conductors. These include the deconstruction of Jc as a function of fim thickness, the growth of in situ films incorporating strong pinning centers and the use of a suite of position-sensitive tools that enable location and analysis of key areas where current-limiting occurs.

  20. Buffered Electropolishing – A New Way for Achieving Extremely Smooth Surface Finish on Nb SRF Cavities to be Used in Particle Accelerators

    SciTech Connect (OSTI)

    Hui Tian, Charles Reece, Michael Kelley

    2009-05-01T23:59:59.000Z

    Future accelerators require unprecedented cavity performance, which is strongly influenced by interior surface nano-smoothness. Electropolishing (EP) is the technique of choice to be developed for high-field superconducting radio frequency (SRF) cavities. Electrochemical impedance spectroscopy (EIS) and related techniques point to the electropolishing mechanism of Nb in a sulphuric and hydrofluoric acid electrolyte controlled by a compact surface salt film under F- diffusion-limited mass transport control. These and other findings are guiding a systematic characterization to form the basis for cavities process optimization.

  1. Photocatalytic Water Oxidation in a Buffered Tris(2,2-bipyridyl)ruthenium Complex-Colloidal IrO2 System

    E-Print Network [OSTI]

    applications in solar energy conversion and storage. However, no satisfactory system has been devised to date of Chemistry, The PennsylVania UniVersity, UniVersity Park, PennsylVania 16802 ReceiVed: January 27, 2000

  2. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, VOL. 22, NO. 3, MARCH 2003 241 Minimum Buffered Routing With Bounded

    E-Print Network [OSTI]

    Kahng, Andrew B.

    reliability with respect to hot-carrier oxide breakdown and AC self-heating in intercon- nects, and guarantees. Mandoiu are with the Departments of Com- puter Science and Engineering, and of Electrical and Computer of today's electrical correctness methodologies. Bounds on load caps im- prove coupling noise immunity

  3. On the SkewBounded MinimumBuffer Routing Tree Problem \\Lambda Christoph Albrecht, y Andrew B. Kahng, Bao Liu, Ion Mandoiu, and Alexander Zelikovsky z

    E-Print Network [OSTI]

    Zelikovsky, Alexander

    ­carrier oxide breakdown (hot electrons) [4, 5] and AC self­heating in inter­ connects [8], and facilitate's electrical cor­ rectness methodologies for high­speed digital VLSI de­ sign. Bounds on load caps improve, bounding the load capacitance at gate outputs is a standard element in to­ day's electrical correctness

  4. Evolution of AlN buffer layers on Silicon and the effect on the property of the expitaxial GaN film

    E-Print Network [OSTI]

    Zang, Keyan

    The morphology evolution of high-temperature grown AlN nucleation layers on (111) silicon has been studied using atomic force microscopy (AFM). The structure and morphology of subsequently grown GaN film were characterized ...

  5. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

    SciTech Connect (OSTI)

    Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia and Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia); Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia)

    2012-06-29T23:59:59.000Z

    GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

  6. Dissolution and compaction of albite sand in distilled water and pH-buffered carboxylic acid solutions: experiments at 100 degrees and 160 degrees C 

    E-Print Network [OSTI]

    Carpenter, Thomas Doyle

    1995-01-01T23:59:59.000Z

    and compaction were monitored to quantify the effects of organic acids on time-dependent compaction rates of albite. The effects of stress and fluid chemistry on the dissolution kinetics were also examined. Compared to distilled water, Si-based dissolution rates...

  7. 1. Prepare 200g of each protein sample in SDS-page loading buffer. 2. Load sample, flanked by prestained molecular weight markers onto a 10% acrylamide gel,

    E-Print Network [OSTI]

    Cravatt, Benjamin

    . 4. Remove supernatant and wash gel bands 2-3x 15' in 500µL 50:50 acetonitrile:100mM ammonium bicarbonate. 5. Remove supernatant and add 50 µL acetonitrile to completely dry gel band (should turn opaque). Remove acetonitrile and speed vac for ~5 minutes or until slices are completely dry. 6. Resuspend a 20µg

  8. Quantifying the effect of buffer zones, crop areas and spatial aggregation on the externalities of genetically modified crops at landscape level

    E-Print Network [OSTI]

    of GM crops are being addressed in the coexistence debate (e.g. Bock et al., 2002; Boelt, 2003 of genetically modified (GM) crops has led the European Union (EU) to put forward the concept of `coexistence). Coexistence is entirely an economic problem and therefore it does not refer to the environmental impact of GM

  9. Expanded Beam Termini John McNeil

    E-Print Network [OSTI]

    La Rosa, Andres H.

    the acrylate, a tight PVC buffer is applied to the fiber. Aramid yarn (Kevlar) then surrounds the PVC buffer

  10. Pasture Development in the East Texas Timber Country.

    E-Print Network [OSTI]

    Crouch, E. K.; Jones, John H.

    1945-01-01T23:59:59.000Z

    plants over the entire area; also only certain plants persisted. The principal plants which have withstood all conditions of heavy grazing, drouths, overflows, and freezes are: carpet grass, Axmpis affinis; dallis grass, Paspalum dilatatum; bermuda...

  11. Introduction `...as the dredge cleared the surface, we saw it full and

    E-Print Network [OSTI]

    1995 Introduction `...as the dredge cleared the surface, we saw it full and overflowing with every the giant animals obtained from nearshore marine dredging (Laserson, 1947); the organisms collected

  12. LLuunnaa CCrreecciieennttee University of Wisconsin-Milwaukee Department of Spanish and Portuguese

    E-Print Network [OSTI]

    Saldin, Dilano

    Dino Bryant Untitled 12 The Groundhog's Summit Elena García Oliveros Cigarro postcoitum 13 Karyn Those Who Wait Despair 30 The Flirt: El Coquet (a dressing table) 32 Diane Unterweger Overflow 33 St

  13. On the Evolution of Reactive Components A Process-Algebraic Approach

    E-Print Network [OSTI]

    Müller-Olm, Markus

    On the Evolution of Reactive Components ­ A Process-Algebraic Approach ­ Markus M¨uller-Olm1 1999 #12;162 Markus M¨uller-Olm, Bernhard Steffen, and Rance Cleaveland in out in out overflow in out

  14. Transient Overexpression of {alpha}-Ca2+/Calmodulin-Dependent Protein Kinase II in the Nucleus Accumbens Shell Enhances Behavioral Responding to Amphetamine

    E-Print Network [OSTI]

    Loweth, Jessica A.

    Ca[superscript 2+]/calmodulin-dependent protein kinase II (CaMKII) is known to contribute to the expression of psychostimulant sensitization by regulating dopamine (DA) overflow from DA neuron terminals in the nucleus ...

  15. SOFTWARE STANDARDS IN CHEMISTRY. PROCEEDINGS OF THE CONFERENCE HELD AT UNIVERSITY OF UTAH, JULY 25-27, 1979. NRCC PROCEEDINGS NO. 7

    E-Print Network [OSTI]

    Harris, Frank E.

    2011-01-01T23:59:59.000Z

    to use this format is the VAX 11/780. Exponent overflow andshould be held at NRCC, using the VAX 11/780 in the RSX-11and printed on the NRCC VAX-Ill 780 computer. A substantial

  16. Stochastic Consequence Analysis for Waste Leaks

    SciTech Connect (OSTI)

    HEY, B.E.

    2000-05-31T23:59:59.000Z

    This analysis evaluates the radiological consequences of potential Hanford Tank Farm waste transfer leaks. These include ex-tank leaks into structures, underneath the soil, and exposed to the atmosphere. It also includes potential misroutes, tank overflow

  17. Subterranean drilling and in situ treatment of wastes using a contamination control system and methods relating thereto

    DOE Patents [OSTI]

    Jessmore, James J.; Loomis, Guy G.; Pettet, Mark C.; Flyckt, Melissa C.

    2004-09-28T23:59:59.000Z

    Systems and methods relating to subterranean drilling while maintaining containment of any contaminants released during the drilling. A thrust block installed over a zone of interest provides an overflow space for retaining any contaminants and excess sealant returns. Negative air pressure may be maintained in the overflow space by a ventilation system. Access ports in the thrust block seal the overflow space from the surrounding environment with a membrane seal. A flexible sack seal in the access port may be connected to a drill shroud prior to drilling, providing containment during drilling after the drill bit penetrates the membrane seal. The drill shroud may be adapted to any industry standard drilling rig and includes a connection conduit for connecting to the flexible sack seal and a flexible enclosure surrounding the drill shaft and of a length to accommodate full extension thereof. Upon withdrawal, the sack seal may be closed off and separated, maintaining containment of the overflow space and the drill shroud.

  18. Chile, 2009 HYDRAULIC MANAGEMENT OF FILAMENTOUS ALGAE IN

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    7 th ISE & 8 th HIC Chile, 2009 HYDRAULIC MANAGEMENT OF FILAMENTOUS ALGAE IN OPEN-CHANNEL NETWORKS mechanical interventions to avoid overflows. Moreover, drifting algae cells increase water turbidity

  19. CX-008279: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Building 8 Compressor Aftercooler Rupture Disc Overflow Piping Project CX(s) Applied: B1.3, B1.15 Date: 05/09/2012 Location(s): West Virginia Offices(s): National Energy Technology Laboratory

  20. Distributed lyapunov functions in analysis of graph models of software

    E-Print Network [OSTI]

    Roozbehani, Mardavij

    In previous works, the authors introduced a framework for software analysis, which is based on optimization of Lyapunov invariants. These invariants prove critical software properties such as absence of overflow and ...

  1. A Sustainable Stormwater Management Proposal for a Bayfront Military Brownfield

    E-Print Network [OSTI]

    Doyle, John

    2011-01-01T23:59:59.000Z

    19, Constructed Wetland Treatment  Overflow from swales to wetlands should be part of a larger  runoff treatment treatment and conveyance.   Partially?treated water from swales travels into either  constructed wetlands 

  2. Structural and functional studies of the Drosophila melanogaster snRNA activating protein complex (DmSNAPc)

    E-Print Network [OSTI]

    Hung, Ko-Hsuan

    2011-01-01T23:59:59.000Z

    ml of 1x Wash Buffer. Centrifuge resin 30 seconds at 2000 g.ml Elution Buffer. b. Centrifuge at 2000 g for 30 seconds.ml of 1x Wash Buffer. b. Centrifuge resin 30 seconds at 2000

  3. ACC 040 Development of Manufacturing Methods for Fiber Preforms

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    preforming cell UD Twintex roving TP-P4 preform buffer Robo t Heat Setting Process Air heater 0.75 Screen buffer Set part buffer 2 Pre- consolidation cell 1 Double belt...

  4. Role of buffer layer in electronic structures of iron phthalocyanine molecules on Au(111) This article has been downloaded from IOPscience. Please scroll down to see the full text article.

    E-Print Network [OSTI]

    Gao, Hongjun

    ) This article has been downloaded from IOPscience. Please scroll down to see the full text article. 2010 Chinese neighbour [10¯1] direction with a lobe downward to the central hole of the unit cell in the first layer of individ- ual pentacene molecules adsorbed on ultrathin insu- lating sodium chloride film supported by Cu

  5. Interactions of Ba{sub 2}YCu{sub 3}O{sub 6+y} with the Gd{sub 3}NbO{sub 7} buffer layer in coated conductors

    SciTech Connect (OSTI)

    Wong-Ng, W., E-mail: Winnie.wong-ng@nist.go [Ceramics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Yang, Z. [Ceramics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Kaduk, J.A. [INEOS Technology, Naperville, IL 60566-7011 (United States); Cook, L.P. [Ceramics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Paranthaman, M. [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

    2010-03-15T23:59:59.000Z

    A systematic study of the chemical interaction of Ba{sub 2}YCu{sub 3}O{sub 6+y} and Gd{sub 3}NbO{sub 7} was conducted under two processing conditions: purified air (21% p{sub o{sub 2}}), and 100 Pa p{sub o{sub 2}} (0.1% p{sub o{sub 2}}). Phases present along the pseudo-binary join Ba{sub 2}YCu{sub 3}O{sub 6z} and Gd{sub 3}NbO{sub 7} were found to be in two five-phase volumes within the BaO-1/2 Y{sub 2}O{sub 3}-1/2 Gd{sub 2}O{sub 3}-Nb{sub 2}O{sub 5}-CuO{sub y} system. Three common phases that are present in all samples are (Y,Gd){sub 2}Cu{sub 2}O{sub 5}, Ba(Y,Gd){sub 2}CuO{sub 5} and Cu{sub 2}O or CuO (depending on the processing conditions). The assemblies of phases can be categorized in three regions, with Ba{sub 2}YCu{sub 3}O{sub 6+y}: Gd{sub 3}NbO{sub 7} ratios of (I)<5.5:4.5; (II)=5.5:4.5; and (III)>5.5:4.5. The lowest melting temperature of the system was determined to be {approx}938 deg. C in air, and 850 deg. C at 100 Pa p{sub o{sub 2}}. Structure determinations of two selected phases, Ba{sub 2}(Gd{sub x}Y{sub 1-x})NbO{sub 6} (Fm3-barm, No. 225), and (Gd{sub x}Y{sub 3-x})NbO{sub 7} (C222{sub 1}, No. 20 and Ccmm, No. 63), were completed using the X-ray Rietveld refinement technique. Reference X-ray powder diffraction patterns for selected phases of Ba{sub 2}(Gd{sub x}Y{sub 1-x})NbO{sub 6} (x=0.2, 0.4, 0.6, and 0.8) and (Gd{sub x}Y{sub 3-x})NbO{sub 7} (x=0.6, 1.2, 1.8, 2.4 and 3) have been prepared for inclusion in the Powder Diffraction File (PDF). - Graphical abstract: Crystal structure for (Gd{sub x}Y{sub 3-x})NbO{sub 7} showing the partial layered feature. The alternate stacking of distorted NbO{sub 6} octahedra and (Gd,Y)O{sub 7} polyhedra are illustrated. The (Gd,Y)O{sub 8} polyhedra are omitted for clarity.

  6. Use of Sm-123 + Sm-211 Mixed-powder Buffers to Assist the Growth of SmBCO and ZrO2-doped SmBCO Single Grain, Bulk Superconductors

    E-Print Network [OSTI]

    Zhao, Wen; Shi, Yunhua; Dennis, Anthony R.; Cardwell, David A.

    2014-12-18T23:59:59.000Z

    . Murakami, and I. Hirabayashi, "High critical current density in RE–Ba–Cu–O bulk superconductors with very fine RE2BaCuO5 particles," Physica C: Superconductivity, vol. 412-414, no. 1, pp. 557–565, Oct. 2004. [4] H. S. Chauhan, and M. Murakami, "Hot... )–Ba–Cu–O superconductors," Nature Materials, vol. 4, pp. 476 - 480, Jun. 2005. [7] N. H. Babu, K. Iida, Y. Shi, and D. A. Cardwell, "Processing of high performance (LRE)-Ba–Cu–O large, single-grain bulk superconductors in air," Physica C: Superconductivity, vol. 445...

  7. Control of Strand Scission by Type IIA Topoisomerases

    E-Print Network [OSTI]

    Schmidt, Bryan Harris

    2012-01-01T23:59:59.000Z

    DNA synthesizer Oligo resuspension and annealing for use intag. As such, after resuspension in Buffer A (withoutFollowing a column wash in resuspension buffer, tagged topo

  8. High Electron Mobility InN

    E-Print Network [OSTI]

    2007-01-01T23:59:59.000Z

    The AlN/GaN buffer layer and sapphire substrate are alsoc- sapphire substrates with an AlN and/or GaN buffer layer,

  9. A verilog-hdl implementation of virtual channels in a network-on-chip router

    E-Print Network [OSTI]

    Park, Sungho

    2009-05-15T23:59:59.000Z

    regulator (ViChaR), have been proposed to use centralized buffer architecture which dynamically allocates virtual channels and buffer slots in real-time depending on traffic conditions. This ViChaR’s dynamic buffer management scheme increases buffer...

  10. Hierarchical interconnections in the nano-composite material bone: Fibrillar cross-links resist fracture on several length scales

    E-Print Network [OSTI]

    Lipman, Everett A.

    from the trabe- culi using a pressurized stream of phosphate buffered saline (PBS) solution or water

  11. On delay-sensitive communication over wireless systems

    E-Print Network [OSTI]

    Liu, Lingjia

    2009-05-15T23:59:59.000Z

    control based on the joint space of channel and buffer states are essential for delaysensitive communications....

  12. Evaluation of in-house PCR for diagnosis of smear-negative pulmonary tuberculosis in Kampala, Uganda

    E-Print Network [OSTI]

    2012-01-01T23:59:59.000Z

    by digestion and decontamination in a bio- safety cabinetseparate tubes with decontamination/phosphate buffers were

  13. Yeast Immunofluorescence Prepare Cells

    E-Print Network [OSTI]

    Aris, John P.

    H2O. Wash once with SPC buffer. 8. Digest yeast cell wall. Resuspend yeast with 0.5 ml SPC buffer. Add 20 µl of freshly made 10 mg/ml Zymolyase 100T in SPC buffer. Or, add 20 µl of 50 mg/ml freshly made Zymolyase 20T in SPC buffer. Incubate at room temperature on rotator for 10 minutes. SPC buffer

  14. www.activemotif.comwww.activemotif.com Protein Purification

    E-Print Network [OSTI]

    Lebendiker, Mario

    Storage Resuspension Buffer 45 ml 175 ml Room Temp. Buffer A 33 ml 125 ml Room Temp. Elution Buffer 11 ml. Resuspension Buffer 50 mM Tris, pH 8.0, 300 mM NaCl, and 10 mM Imidazole, 0.2% Triton X-100 2. Lysozyme 100 mg concentration of 0.2% to the Resuspension Buffer. This will help the ly

  15. PIP Strip/Array Protocol 1) Cut the membrane (Amersham Hybond-C Extra RPN203E) into the appropriate

    E-Print Network [OSTI]

    Gozani, Or

    before making strips. a. Resuspension Buffer - 250ul Chloroform + 500ul MeOH + 200ul Water b. Spot Buffer lipid in the correct amount of Resuspension Buffer to make a 1mM stock solution. Work in the glass vial with 104.5ul Resuspension Buffer. Lipid Amount ul Resuspion Buffer for 1mM PI 0.1 mg 109.6 ul PI3P 0.1 mg

  16. Influence of Tributaries on Salinity of Amistad International Reservoir

    E-Print Network [OSTI]

    Miyamoto, S.; Yuan, Fasong; Anand, Shilpa

    in this reach might be a result of saline water intrusion, resulting from dissolution of geological salts (Miyamoto et al., 2005). Soil Depth No Overflow Overflow Difference Conductivity of the saturation extract (dS m -1 ) 0 - 1 (cm) 200 10 190 0 - 5 (cm...) 13 - - 1 - 120 (cm) 35 5 30 5 - 15 (cm) 9 0 - 60 (cm) 8 Salinity of soil extract (g L -1 ) 0 - 1 (cm) 200 6 194 0 - 5 (cm) 9 - - 1 - 120 (cm) 24 3 21 5 - 15 (cm) 6 0 - 60 (cm) 6 Salt storage (tons/ha) 2 - 0 - 1 (cm) 10 0.3 10 0 - 1 (cm) 0.5 - - 1...

  17. Performing a local reduction operation on a parallel computer

    DOE Patents [OSTI]

    Blocksome, Michael A.; Faraj, Daniel A.

    2012-12-11T23:59:59.000Z

    A parallel computer including compute nodes, each including two reduction processing cores, a network write processing core, and a network read processing core, each processing core assigned an input buffer. Copying, in interleaved chunks by the reduction processing cores, contents of the reduction processing cores' input buffers to an interleaved buffer in shared memory; copying, by one of the reduction processing cores, contents of the network write processing core's input buffer to shared memory; copying, by another of the reduction processing cores, contents of the network read processing core's input buffer to shared memory; and locally reducing in parallel by the reduction processing cores: the contents of the reduction processing core's input buffer; every other interleaved chunk of the interleaved buffer; the copied contents of the network write processing core's input buffer; and the copied contents of the network read processing core's input buffer.

  18. Performing a local reduction operation on a parallel computer

    DOE Patents [OSTI]

    Blocksome, Michael A; Faraj, Daniel A

    2013-06-04T23:59:59.000Z

    A parallel computer including compute nodes, each including two reduction processing cores, a network write processing core, and a network read processing core, each processing core assigned an input buffer. Copying, in interleaved chunks by the reduction processing cores, contents of the reduction processing cores' input buffers to an interleaved buffer in shared memory; copying, by one of the reduction processing cores, contents of the network write processing core's input buffer to shared memory; copying, by another of the reduction processing cores, contents of the network read processing core's input buffer to shared memory; and locally reducing in parallel by the reduction processing cores: the contents of the reduction processing core's input buffer; every other interleaved chunk of the interleaved buffer; the copied contents of the network write processing core's input buffer; and the copied contents of the network read processing core's input buffer.

  19. Hg System Decommissioning V.B. Graves

    E-Print Network [OSTI]

    McDonald, Kirk

    respiratory protection at all times · Local ventilation in use · Estimate total overflow ~200 ml - Most cleaner storage canister and in plastic intermediate container · Vacuum cleaner and local ventilation · Prepared Hg vacuum cleaner, started cleanup of larger Hg pools then entire local area · Wiped equipment

  20. International Symposium on New Directions in Urban Water Management 12-14 September 2007, UNESCO Paris

    E-Print Network [OSTI]

    Boyer, Edmond

    periods. Combined systems are equipped with CSOs' devices to avoid overflows on streets or house basement to reach and maintain a good ecological status (EU, Directive 2000). For highly modified water masses like in urban and periurban areas, the objective of a maximal ecological potential must be defined and reached

  1. When thinking about your appearance for career fairs and job interviews, think "conservative." While many companies have adopted a "business casual" dress code, most employers expect to see job candidates in traditional office attire. When in doubt, it is

    E-Print Network [OSTI]

    Kulp, Mark

    dry-cleaned and/or pressed at least 3 days in advance. · Polish your shoes and check the heels. · Check your hosiery or socks for runs or holes. · Don't lug around an over-flowing book bag; keep, but a coat and tie with dress pants (not khakis) will suffice for career fairs and on-campus interviews

  2. Mathematical Modeling of Thermal-Fluid Flow in the Meniscus Region During An Oscillation Cycle Claudio Ojeda

    E-Print Network [OSTI]

    Thomas, Brian G.

    -mail:barco@labein.es Jose Luis Arana University of Basque Country C/Alameda de Urkijo S/N 48013-Bilbao(Vizcaya)-Spain Fax:+34-94-601-4180 E-mail:jl.arana@ehu.es Key words: Mold powder, Lubrication, Overflow, Slag rim, Fluid

  3. Sensors 2009, 9, 2647-2660; doi:10.3390/s90402647 ISSN 1424-8220

    E-Print Network [OSTI]

    some green roof systems being monitored, describe the sensor selection employed to study energy balance for meteorological stations. Keywords: Urban heat island, green roofs, combined sewer overflows, energy balance.mdpi.com/journal/sensors Communication Development of a Green Roof Environmental Monitoring and Meteorological Network in New York City

  4. Accepted, subject to re-review, Journal of Hydraulic Engineering, ASCE, version of January 2006 Role of Ponded Turbidity Currents in Reservoir Trap Efficiency

    E-Print Network [OSTI]

    Parker, Gary

    , because some of this sediment may pass out of the reservoir without settling out. Here a model of trap. The dam causes a sustained turbidity current to reflect and form a muddy pond bounded upstream by a hydraulic jump. If the interface of this muddy pond rises above any vent or overflow point at the dam

  5. Building Name: ____________________________________________ Address: __________________________________________ Completed by: ___________________________________________ Date: ______________ File Number: ___________________

    E-Print Network [OSTI]

    s Rated Btu input Condition s Combustion air: is there at least one square inch free area per 2,000 Btu input? s Fuel or combustion odors Cooling Tower s Clean? no leaks or overflow? Slime or algae growth? s Waste oil and refrigerant properly stored and disposed of? #12;Building Name

  6. Flood events Dr. Andre Paquier

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    over the banks of the main channel, direct runoff or failure of a levee or other structure. Flash, sediment load, bed morphology, hydraulic structures (design, operation, failure), wind, sea (or lake) level to a deepening of the main channel (such as downstream from a newly built dam), which means less overflows

  7. STABILIT GOTECHNIQUE DES OUVRAGES DE RETENUE POUR LES RSIDUS MINIERS: PROBLMES PERSISTANTS ET MTHODES DE CONTRLE

    E-Print Network [OSTI]

    Aubertin, Michel

    criteria and the risks associated with dam failure is also presented. New alternatives to help control à résidus miniers. ABSTRACT Tailings dams should be designed to support the most unfavourable loads of failure are caused by slips along the slopes, loose tailings liquefaction, overflow of ponds

  8. Programming Home Care Claire Maternaghan and Kenneth J. Turner

    E-Print Network [OSTI]

    Hammerton, James

    the home and then expose the functionality to a range of different interfaces on different platforms, bed wetting or overflowing baths. The home provision is supplemented by a link to a call center are usually relatively fixed in function. Where changes are possible, they normally require specialised

  9. Claire Maternaghan and Kenneth J. Turner. Programming Home Care. In Maria K. Wolters, Kenneth J. Turner and H. Lakany, editors,

    E-Print Network [OSTI]

    Turner, Ken

    and then expose the functionality to a range of different interfaces on different platforms and devices, bed wetting or overflowing baths. The home provision is supplemented by a link to a call center are usually relatively fixed in function. Where changes are possible, they normally require specialised

  10. PUTTING KNOWLEDGE TO WORK COLLEGE OF AGRICULTURAL AND ENVIRONMENTAL SCIENCES, COLLEGE OF FAMILY AND CONSUMER

    E-Print Network [OSTI]

    Navara, Kristen

    ADDITION TO THE CHILLER The USDA-Food Safety Inspection Service recently required companies to demonstrate that redwater being pumped back into chillers from the rechiller is "cleaner" or "hase less bacteria and turbidity" than water coming out of the chillers in the overflow. This regulation has caused some

  11. Darrick Weissenfluh Facility Manager/Fish Biologist, USFWS

    E-Print Network [OSTI]

    underground tank that the over-flow water is sent to in order to control water-out for a future field, if needed. The design was based on a water flow of 2.2 gallons/minute and the storage volume/energy in the tank. ~9.17MM btu available

  12. July, 2004 (Revised) 1 TENNESSEE DEPARTMENT OF ENVIRONMENT AND CONSERVATION

    E-Print Network [OSTI]

    Tennessee, University of

    , or disposal of agricultural wastes, animal waste/wastewater, waste product, and dead animals generated) An "AFO overflow" means the discharge of manure or process wastewater resulting from the filling of wastewater or manure storage structures beyond the point at which no more manure, process wastewater

  13. UBC Social Ecological Economic Development Studies (SEEDS) Student Report Alex Faubert, Andrew Burgin, Ewan McEachern, Michael Lemm, Rahim Fazal, Richie Chin

    E-Print Network [OSTI]

    for the overflow parking. Lastly the environmental discipline includes best management practices for managing storm water runoff including the design of a green roof and a permeable road surface. Autodesk Revit software. Our team at G4 Consulting has determined the best and most efficient schedule for completion would

  14. Arctic Change 2009 -Woodgate Paleo role of

    E-Print Network [OSTI]

    Washington at Seattle, University of

    from http://sam.ucsd.edu/sio210/gifimages/A16_THETA.gif Potential Temperature at 25W SOUTH NORTH 60N 30 Overflow from http://iodp.tamu.edu/publications/PR/303PR/images/Fig01.jpg Dickson et al, refs Denmark

  15. TYPES OF FLOODING IN AUSTRALIA Floods are part of the natural water cycle or a "Hydrologic Cycle". In this natural cycle, the energy of the sun causes

    E-Print Network [OSTI]

    Greenslade, Diana

    to carry the water that has entered the river network, and the banks overflow. The area that gets inundated an emergency kit containing: o a first aid kit o a torch and portable radio with spare batteries o candles records, including wills, birth/marriage certificates, banking, financial records, etc · keep a list

  16. Submitted to the Journal of the American Water Resources Association Potential Human Health Effects Associated with Pathogens in Urban Wet Weather Flows

    E-Print Network [OSTI]

    Pitt, Robert E.

    Effects Associated with Pathogens in Urban Wet Weather Flows Robert Pitt1 , Melinda Lalor2 , and John stormwater conveyance systems, or wet weather sewage overflows, may adversely impact many of the desired uses. Urban runoff or wet weather flows include not only precipitation and washoff from lawns and landscaped

  17. (The Elephant's Toothpaste Experiment) A clean 16 ounce plastic soda bottle

    E-Print Network [OSTI]

    Benitez-Nelson, Claudia

    (The Elephant's Toothpaste Experiment) A clean 16 ounce plastic soda bottle 1/2 cup 20-volume will overflow from the bottle, so be sure to do this experiment on a washable surface, or place the bottle to carefully pour the hydrogen peroxide into the bottle. 2. Add 8 drops of your favorite food coloring

  18. Blackouts Are Inevitable Coping, Not Prevention, Should Be the Primary Goal

    E-Print Network [OSTI]

    a blackout large enough to darken a half-million homes. Now the pressure is on Congress to enact an energy. Elevators were stuck between floors, trains stopped between stations, traffic lights went dark, cell phones quieted, and, in Cleveland, water ceased to flow and sewers overflowed. Water treatment and pumping

  19. POLLUTANT ASSOCIATIONS WITH PARTICULATES

    E-Print Network [OSTI]

    Pitt, Robert E.

    husband and my family. Without your love and support during all the years of my academic endeavors I would ii #12;LIST OF ABBREVIATIONS AND SYMBOLS Zn Zinc Cu Copper Cd Cadmium Pb Lead Mg Magnesium Mn CSO Combined Sewer Overflow USEPA United States Environmental Protection Agency ORP Ortho

  20. Cloud Security by Max Garvey

    E-Print Network [OSTI]

    Tolmach, Andrew

    Cloud Security Survey by Max Garvey #12;Cloudy Cloud is Cloudy What is the cloud? On Demand Service Network access Resource pooling Elasticity of Resources Measured Service #12;Cloud Types/Variants Iaa Cloud Public Cloud Hybrid Cloud combination. Private cloud with overflow going to public cloud. #12

  1. COLORADO SCHOOL OF MINES RESEARCH INSTITUTE (CSMRI) SITE FLOOD PLAIN AREA CLEANUP FACT SHEET & PROJECT SUMMARY

    E-Print Network [OSTI]

    . In 1992 a water main break at the Site flooded a tailings pond that overflowed into Clear Creek. The U.S. Environmental Protection Agency excavated and stockpiled soil from the tailings pond and surrounding area at the west end of the former tailings pond area previously cleaned up by EPA was found to contain

  2. SLUDGE PARTICLE SEPAPATION EFFICIENCIES DURING SETTLER TANK RETRIEVAL INTO SCS-CON-230

    SciTech Connect (OSTI)

    DEARING JI; EPSTEIN M; PLYS MG

    2009-07-16T23:59:59.000Z

    The purpose of this document is to release, into the Hanford Document Control System, FA1/0991, Sludge Particle Separation Efficiencies for the Rectangular SCS-CON-230 Container, by M. Epstein and M. G. Plys, Fauske & Associates, LLC, June 2009. The Sludge Treatment Project (STP) will retrieve sludge from the 105-K West Integrated Water Treatment System (IWTS) Settler Tanks and transfer it to container SCS-CON-230 using the Settler Tank Retrieval System (STRS). The sludge will enter the container through two distributors. The container will have a filtration system that is designed to minimize the overflow of sludge fines from the container to the basin. FAI/09-91 was performed to quantify the effect of the STRS on sludge distribution inside of and overflow out of SCS-CON-230. Selected results of the analysis and a system description are discussed. The principal result of the analysis is that the STRS filtration system reduces the overflow of sludge from SCS-CON-230 to the basin by roughly a factor of 10. Some turbidity can be expected in the center bay where the container is located. The exact amount of overflow and subsequent turbidity is dependent on the density of the sludge (which will vary with location in the Settler Tanks) and the thermal gradient between the SCS-CON-230 and the basin. Attachment A presents the full analytical results. These results are applicable specifically to SCS-CON-230 and the STRS filtration system's expected operating duty cycles.

  3. 1 INTRODUCTION Flood risk is a major economical issue in many

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    . Two numerical models solving the ad- vection-dispersion equations were applied and com- pared of fine sediment deposits, and is an interesting challenge for 1D modelling. Discharges in the Rhône River for the dynamics of fine sediments in a compound channel. While many studies exist on river overflowing

  4. Appendix E. National Pollutant Discharge Elimination System Noncompliance

    E-Print Network [OSTI]

    Pennycook, Steve

    in the Steam Plant Wastewater Treatment Facility. A portion of the overflow entered the storm drain system of a wastewater batch at the Steam Plant Wastewater Treatment Facility (SPWTF ­ NPDES Outfall X02) became. Members of the Y-12 Environmental Compliance Department and the Y-12 Biological Monitoring and Abatement

  5. Introduction The AdenoPACK 100 adenovirus

    E-Print Network [OSTI]

    Lebendiker, Mario

    with chromatography and cesium chloride density gradients. Moreover, Adenovirus is recovered in non-cytotoxic buffers, contaminating proteins and nucleic acids with washing buffer. D. Elution Elute purified viral particles

  6. Hydrocarbon-free resonance transition 795 nm rubidium laser

    E-Print Network [OSTI]

    Wu, Sheldon Shao Quan

    2009-01-01T23:59:59.000Z

    transition 795-nm rubidium laser," Opt. Lett. 32, 2423- S.transition 795- nm rubidium laser using 3 He buffer gas",transition 795-nm Rubidium laser with He buffer gas" (

  7. attenuated strain r566: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of 346 An Analysis of Flow Attenuation Provided by Stream-Buffer Ordinances in Johnson County, Kansas University of Kansas - KU ScholarWorks Summary: -buffer is to preserve dense...

  8. attenuates salt-sensitive hypertension: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of 394 An Analysis of Flow Attenuation Provided by Stream-Buffer Ordinances in Johnson County, Kansas University of Kansas - KU ScholarWorks Summary: -buffer is to preserve dense...

  9. 16 1092-3063/00/$10.00 2000 IEEE IEEE Concurrency Hierarchical Caching

    E-Print Network [OSTI]

    mechanical movements that are unlikely to speed up in the near future. Storage device vendors are thus. This buffer simultaneously fills and emp- ties: data read from disks fills half the buffer, while the other

  10. Isoelectric Trapping and Mass Spectrometry: Tools for Proteomics

    E-Print Network [OSTI]

    Cologna, Stephanie Marie

    2012-02-14T23:59:59.000Z

    ................... 4 Electrophoretic Separations............................................................ 5 Isoelectric Focusing (IEF) .............................................................. 6... including anode and cathode compartments, separation wells and buffering membranes. The number of separation wells and pH values of buffering membranes can be tailored for each experiment. ......................................... 21 Figure 6...

  11. Subunit interactions and protein-DNA interactions of the Drosophila melanogaster small nuclear RNA activating protein complex

    E-Print Network [OSTI]

    Titus, Mitchell

    2007-01-01T23:59:59.000Z

    precooled 1.5ml tube 3. Centrifuge the resin for 4 minutesof 1x wash buffer b. Centrifuge resin 30 seconds at 2000 x gml "elution buffer". b. Centrifuge at 2000 x g for 30 sec.

  12. Isoelectric Trapping and Mass Spectrometry: Tools for Proteomics 

    E-Print Network [OSTI]

    Cologna, Stephanie Marie

    2012-02-14T23:59:59.000Z

    ................... 4 Electrophoretic Separations............................................................ 5 Isoelectric Focusing (IEF) .............................................................. 6... including anode and cathode compartments, separation wells and buffering membranes. The number of separation wells and pH values of buffering membranes can be tailored for each experiment. ......................................... 21 Figure 6...

  13. Structural and functional analysis of chemokine interactions with glycosaminoglycans and chemokine receptors

    E-Print Network [OSTI]

    Salanga, Catherina L.

    2011-01-01T23:59:59.000Z

    Ex. Coeff: 8730 BUFFERS: Resuspension Buffer: (Store at 4°Cof Milli-Q H 2 O. The resuspension volume should be adjustedApproximately 15 µl of the resuspension was added to a 96-

  14. Elucidating the functions and signaling mechanisms of the chemokine CXCL12 and its receptors CXCR4 and CXCR7 in cancer

    E-Print Network [OSTI]

    O'Hayre, Morgan L.

    2011-01-01T23:59:59.000Z

    BUFFERS: Inclusion Body Resuspension Buffer: (store at 4?C)a 10 ?L aliquot of cell resuspension for cell count- it iswith an aliquot of the resuspension (e.g. 1:12 is usually

  15. -PERSPECTIVES Sexual selection by cryptic female choice

    E-Print Network [OSTI]

    Bermingham, Eldredge

    de Mexico, Apartado Postal70-275,UNAM,04510Mexico,D.F.,Mexico. Events occurring within's reproductive tract, providing lubrication, sperm nutrition, pH buffering, osmotic buffering and defenses

  16. Georgia Erosion and Sedimentation Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Erosion and Sedimentation Act (GESA) is designed to protect vegetated buffers. GESA establishes a minimum undisturbed, vegetated buffer of 25 feet for all streams in Georgia (measured...

  17. amides 6f-pea fluoro-polyether: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amides Chemistry Websites Summary: with running buffer 1 TBE (89 mM each Tris and boric acid and 2 mM EDTA, pH 8.3), extracted from the polyacrylamide with TEN buffer (10...

  18. amides: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amides Chemistry Websites Summary: with running buffer 1 TBE (89 mM each Tris and boric acid and 2 mM EDTA, pH 8.3), extracted from the polyacrylamide with TEN buffer (10...

  19. ITO/PEDOT/acrylic at 100 C 3 /, w/o PEDOT: high /

    E-Print Network [OSTI]

    Fair, Richard

    ~ 10 hr 2 · hands-on: 3 hr 3 · manual sample transfer between instruments time wasted step hr mix, primers/probe 2 60 95 DM electrodes heater wash buffer 2 wash buffer 3 SecureSeal gasket Parylene

  20. Vermont Wetland Rules (Vermont)

    Broader source: Energy.gov [DOE]

    A permit is required for any activity within a Class I or Class II wetland or wetland buffer zone which is not an allowed use. Activity in Class I or Class II wetland or its associated buffer zone...

  1. Subunit interactions and protein-DNA interactions of the Drosophila melanogaster small nuclear RNA activating protein complex

    E-Print Network [OSTI]

    Titus, Mitchell

    2007-01-01T23:59:59.000Z

    fusion protein, prepare 20ml of HEMG wash buffer and store it in the refrigerator so it will be cold

  2. Subcellular Distribution of Signal Recognition Particle and 7SL-RNA Determined with Polypeptide-Specific

    E-Print Network [OSTI]

    Walter, Peter

    , dithiothreitol ; IgG, immunoglobul in G ; PBS, phosphate- buffered saline ; PL, prolactin ; pPL, preprolactin

  3. Prepared by Heather Wilcox Feb. 22, 2009

    E-Print Network [OSTI]

    Worden, Alexandra Z.

    in an autoclaved glass bottle (we pre- autoclave the bottle). Aliquots of SUCROSE LYSIS BUFFER can be prepared

  4. Appears in the Proceedings of the International Workshop on Power and Timing Modeling, Optimization and Simulation, September, 2002

    E-Print Network [OSTI]

    Kucuk, Gurhan

    . ___________________________________________________ Energy­Efficient Design of the Reorder Buffer1 Dmitry Ponomarev, Gurhan Kucuk, Kanad Ghose Department

  5. Evaluate Si Layers: Cooperative Research and Development Final Report, CRADA Number CRD-07-255

    SciTech Connect (OSTI)

    Teplin, C.

    2013-04-01T23:59:59.000Z

    Evaluate Si layers based on heteroepitaxial Si growth on RABITS textured metal substrates coated with textured buffer layers.

  6. Agron. Sustain. Dev. 29 (2009) 313319 c INRA, EDP Sciences, 2008

    E-Print Network [OSTI]

    Boyer, Edmond

    the environmental impact of herbicides is the use of so-called buffer strips (Lacas et al., 2005). Buffer strips can arundinacea grass and herbicide safeners to prevent herbicide pollution Luciano Scarponi*, Daniele Del Buono the environ- mental impact of herbicides. As the efficiency of buffer strips is improved by the presence

  7. DNA digestion protocol & hints Overview: Although it is pretty standard to digest DNA with restriction enzymes, here

    E-Print Network [OSTI]

    Doering, Tamara

    Liu 4/2004 DNA digestion protocol & hints Overview: Although it is pretty standard to digest DNA in molecular biology (3.1.1-3.1.2) Materials: · DNA sample in water or TE buffer · 10x digestion buffer.1 to 4 µg 10x Digestion buffer 2 µl 5 µl Enzyme ? ? Water Rest of volume Rest of volume 2. Add the enzyme

  8. Table 1. HARVESTING MANAGEMENT STRATEGIES Strategy Name Use Typical location

    E-Print Network [OSTI]

    channels Partial cutting systems PARTIAL To minimize fan destabilization Fans with high destabilization To reduce the logging debris load For gullies with high debris flow potential FS197C RVA 2002/03 #12;Table 2, BUFFER Hb NOLOG Hb NOLOG M LOG/CLWD M BUFFER, LS/CTWD Mb BUFFER, PARTIAL Mb BUFFE, PARTIA, LS/CLWD L LOG

  9. Approximating an Optimal Production Policy in a Continuous Flow Line: Recurrence and Asymptotic

    E-Print Network [OSTI]

    Vázquez-Abad, Felisa J.

    , production planning and schedul­ ing, produce­to­stock, buffer size, buffer control, JIT systems­prone tandem machines. The production is regulated by a continuous version of buffer control. Our goal that for each feasible machine state, the optimal production control policy is to move the inventory levels

  10. Supplemental Experimental Procedures Cell Culture and Induction of Apoptosis

    E-Print Network [OSTI]

    Cravatt, Benjamin

    and acetonitrile. The pooled supernatant was dried and resuspended in 10 µl buffer A (95% H2O, 5% acetonitrile, 0 eluted from the column using a 2-hour gradient of 5-100% Buffer B (Buffer B: 20% H2O, 80% acetonitrile, 0

  11. Semiconductor films on flexible iridium substrates

    DOE Patents [OSTI]

    Goyal, Amit

    2005-03-29T23:59:59.000Z

    A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

  12. Managing internode data communications for an uninitialized process in a parallel computer

    DOE Patents [OSTI]

    Archer, Charles J; Blocksome, Michael A; Miller, Douglas R; Parker, Jeffrey J; Ratterman, Joseph D; Smith, Brian E

    2014-05-20T23:59:59.000Z

    A parallel computer includes nodes, each having main memory and a messaging unit (MU). Each MU includes computer memory, which in turn includes, MU message buffers. Each MU message buffer is associated with an uninitialized process on the compute node. In the parallel computer, managing internode data communications for an uninitialized process includes: receiving, by an MU of a compute node, one or more data communications messages in an MU message buffer associated with an uninitialized process on the compute node; determining, by an application agent, that the MU message buffer associated with the uninitialized process is full prior to initialization of the uninitialized process; establishing, by the application agent, a temporary message buffer for the uninitialized process in main computer memory; and moving, by the application agent, data communications messages from the MU message buffer associated with the uninitialized process to the temporary message buffer in main computer memory.

  13. Deflate decompressor

    DOE Patents [OSTI]

    Hamlet, Jason R. (Albuquerque, NM); Robertson, Perry J. (Albuquerque, NM); Pierson, Lyndon G. (Albuquerque, NM); Olsberg, Ronald R. (Albuquerque, NM)

    2012-02-28T23:59:59.000Z

    A deflate decompressor includes at least one decompressor unit, a memory access controller, a feedback path, and an output buffer unit. The memory access controller is coupled to the decompressor unit via a data path and includes a data buffer to receive the data stream and temporarily buffer a first portion the data stream. The memory access controller transfers fixed length data units of the data stream from the data buffer to the decompressor unit with reference to a memory pointer pointing into the memory buffer. The feedback path couples the decompressor unit to the memory access controller to feed back decrement values to the memory access controller for updating the memory pointer. The decrement values each indicate a number of bits unused by the decompressor unit when decoding the fixed length data units. The output buffer unit buffers a second portion of the data stream after decompression.

  14. Apparatus and method for continuous separation of magnetic particles from non-magnetic fluids

    DOE Patents [OSTI]

    Oder, Robin R. (Export, PA); Jamison, Russell E. (Lower Burrell, PA)

    2010-02-09T23:59:59.000Z

    A magnetic separator vessel (1) for separating magnetic particles from non-magnetic fluid includes a separation chamber having an interior and exterior wall, a top and bottom portion; a magnet (3) having first and second poles (2) positioned adjacent to the exterior wall, wherein the first pole is substantially diametrically opposed to the second pole; a inlet port (5) is directed into the top portion of the separation chamber, wherein the inlet port (5) is positioned adjacent to one of the first and second poles (2), wherein the inlet port (5) is adapted to transfer a mixture into the separation chamber; an underflow port (6) in communication with the bottom portion, wherein the underflow port (6) is adapted to receive the magnetic particles; and an overflow port (9) in communication with the separation chamber, wherein the overflow port (9) is adapted to receive the non-magnetic fluid.

  15. Device and method for automated separation of a sample of whole blood into aliquots

    DOE Patents [OSTI]

    Burtis, Carl A. (Oak Ridge, TN); Johnson, Wayne F. (Loudon, TN)

    1989-01-01T23:59:59.000Z

    A device and a method for automated processing and separation of an unmeasured sample of whole blood into multiple aliquots of plasma. Capillaries are radially oriented on a rotor, with the rotor defining a sample chamber, transfer channels, overflow chamber, overflow channel, vent channel, cell chambers, and processing chambers. A sample of whole blood is placed in the sample chamber, and when the rotor is rotated, the blood moves outward through the transfer channels to the processing chambers where the blood is centrifugally separated into a solid cellular component and a liquid plasma component. When the rotor speed is decreased, the plasma component backfills the capillaries resulting in uniform aliquots of plasma which may be used for subsequent analytical procedures.

  16. Track detection: an MCM approach

    E-Print Network [OSTI]

    Kotha, Kedarnath S.

    1993-01-01T23:59:59.000Z

    relative to its VLSI counterpart. However, major innovations in functional partitioning, VLSI design, testing and manufacturing are needed to realize this vi- sion. Existing IC' packaging and interconnecting is creating a barrier for advances taking... of overflow wires on the surface of the substrate using standard manufacturing process. Innovations in system packaging and organi- zation, and extensive design verification by software and hardware models, led to the realization of the increased...

  17. Evaluation on Energy Performance of Heating Plant System Installed Energy Saving Technologies 

    E-Print Network [OSTI]

    Song, Y.; Akashi, Y.; Kuwahara, Y.; Baba, Y.; Iribe, M.

    2004-01-01T23:59:59.000Z

    is paper presents all of the heating plant system except steam heating as boilers. Integrated Cooling Tower In general, the traditional relations between cooling towers and refrigerating machines are on a one to one basis. But in the case... water outlet temperature in cooling tower. When the quantity of the flow exceeds the default values, another group of unit cells goes stand by mode. And if the overflow state continues beyond a set time, another group of unit cells runs. In the case...

  18. General Physics I Exam 4 -Chs. 10,11,12 -Fluids, Waves, Sound Nov. 19, 2008 Name: Rec. Instr.: Rec. Time

    E-Print Network [OSTI]

    Wysin, Gary

    of the solution? 3. (2) T F The bouyant force on a submerged empty 2.0-liter bottle is greater than the bouyant force on a floating empty 2.0-liter bottle. 4. (2) T F A boat floating on a river experiences no bouyant force. 5. (2) T F When an ice cube floating in a glass filled with water melts, some water will overflow

  19. Toxic and deadly: Working to manage algae in Lake Granbury 

    E-Print Network [OSTI]

    Wythe, Kathy

    2010-01-01T23:59:59.000Z

    Toxic and deadly Working to manage algae in Lake Granbury Lake Granbury, located about 33 miles southwest of Fort Worth, is a recreation haven for water enthusiasts. In recent years, however, bacteria and golden algae have threatened the lake... of water and the presence of pathogens. These E. coli sources can be from sewage overflows, polluted stormwater runoff, or malfunctioning septic systems. Toxic golden algae blooms have killed fish in Lake Granbury and Lake Whitney, downstream...

  20. Toxic and deadly: Working to manage algae in Lake Granbury 

    E-Print Network [OSTI]

    Wythe, Kathy

    2011-01-01T23:59:59.000Z

    Toxic and deadly Working to manage algae in Lake Granbury Lake Granbury, located about 33 miles southwest of Fort Worth, is a recreation haven for water enthusiasts. In recent years, however, bacteria and golden algae have threatened the lake... of water and the presence of pathogens. These E. coli sources can be from sewage overflows, polluted stormwater runoff, or malfunctioning septic systems. Toxic golden algae blooms have killed fish in Lake Granbury and Lake Whitney, downstream...

  1. Mass Transfer from Giant Donors

    E-Print Network [OSTI]

    Pavlovskii, K

    2014-01-01T23:59:59.000Z

    The stability of mass transfer in binaries with convective giant donors remains an open question in modern astrophysics. There is a significant discrepancy between what the existing methods predict for a response to mass loss of the giant itself, as well as for the mass transfer rate during the Roche lobe overflow. Here we show that the recombination energy in the superadiabatic layer plays an important and hitherto unaccounted-for role in he donor's response to mass loss, in particular on its luminosity and effective temperature. Our improved optically thick nozzle method to calculate the mass transfer rate via $L_1$ allows us to evolve binary systems for a substantial Roche lobe overflow. We propose a new, strengthened criterion for the mass transfer instability, basing it on whether the donor experiences overflow through its outer Lagrangian point. We find that with the new criterion, if the donor has a well-developed outer convective envelope, the critical initial mass ratio for which a binary would evolv...

  2. Internode data communications in a parallel computer

    DOE Patents [OSTI]

    Archer, Charles J; Blocksome, Michael A; Miller, Douglas R; Parker, Jeffrey J; Ratterman, Joseph D; Smith, Brian E

    2014-02-11T23:59:59.000Z

    Internode data communications in a parallel computer that includes compute nodes that each include main memory and a messaging unit, the messaging unit including computer memory and coupling compute nodes for data communications, in which, for each compute node at compute node boot time: a messaging unit allocates, in the messaging unit's computer memory, a predefined number of message buffers, each message buffer associated with a process to be initialized on the compute node; receives, prior to initialization of a particular process on the compute node, a data communications message intended for the particular process; and stores the data communications message in the message buffer associated with the particular process. Upon initialization of the particular process, the process establishes a messaging buffer in main memory of the compute node and copies the data communications message from the message buffer of the messaging unit into the message buffer of main memory.

  3. Internode data communications in a parallel computer

    DOE Patents [OSTI]

    Archer, Charles J.; Blocksome, Michael A.; Miller, Douglas R.; Parker, Jeffrey J.; Ratterman, Joseph D.; Smith, Brian E.

    2013-09-03T23:59:59.000Z

    Internode data communications in a parallel computer that includes compute nodes that each include main memory and a messaging unit, the messaging unit including computer memory and coupling compute nodes for data communications, in which, for each compute node at compute node boot time: a messaging unit allocates, in the messaging unit's computer memory, a predefined number of message buffers, each message buffer associated with a process to be initialized on the compute node; receives, prior to initialization of a particular process on the compute node, a data communications message intended for the particular process; and stores the data communications message in the message buffer associated with the particular process. Upon initialization of the particular process, the process establishes a messaging buffer in main memory of the compute node and copies the data communications message from the message buffer of the messaging unit into the message buffer of main memory.

  4. Western Blot Protocol-de Lange Lab Western Blot Protocol (updated on 05/20/14)

    E-Print Network [OSTI]

    de Lange, Titia

    :10 with MillliQ water. Adjust pH to 8.3 (should be close) 10x Transfer Buffer Stock (1L) 30.3 g Tris Base 144 g) BioMax XAR Film (KODAK) Laemmli Sample Buffer Cell Extracts Cells can be directly lysed into 2x Laemmli Sample buffer (v.1 or v.2) as follows (not for ubiquitination): 1. Harvest cells by trypsinization

  5. Microtubule Binding Assay from the Davis Lab Graczyk and Davis, Anal. Biochem. 2011

    E-Print Network [OSTI]

    Davis, Trisha N.

    ., J. Cell Biol. 2008 10:407 In this assay a GFP tagged protein or complex is bound to microtubules buffer is 50 mM sodium phosphate buffer, pH 6.8, containing 350 mM NaCl. This should be optimized, below): Transfer 1 µl into 9 µl dH20 and add 10 µl 2x sample buffer. #12;2 4) Spin down 33 µl at 90 K

  6. Glutathione Resins I. List of Components

    E-Print Network [OSTI]

    Lebendiker, Mario

    , dilute 4 ml of 10X Extraction/Loading Buffer with 36 ml of deionized water. If necessary, warm is prepacked with 1-ml Glutathione-Uniflow Resin. · 5 x 100 mg of Glutathione (reduced) · 10X Extraction/Loading Buffer (1.4 mM NaCl; 100 mM Na2 HPO4 ; 18 mM KH2 PO4 , pH 7.5): To prepare the extraction/loading buffer

  7. HOT PHENOL RNA EXTRACTION PROTOCOL 1) Set the water bath to 800

    E-Print Network [OSTI]

    Gill, Kulvinder

    HOT PHENOL RNA EXTRACTION PROTOCOL 1) Set the water bath to 800 C. 2) Make 50 mL Extraction bufferL SDS = 0.5 gm DEPC treated water = 43.2 mL Total = 50 mL 3) Add 50 mL phenol (pH = 4.7), in 50 mL extraction buffer (final concentration of 1:1). For small sample add 200 to 300ul of 1Extraction buffer: 1

  8. Properties of the formate-pyruvate exchange system in extracts of Streptococcus faecalis

    E-Print Network [OSTI]

    Oster, Mark Otho

    1961-01-01T23:59:59.000Z

    . Manganese iona were slightly stimulatory when added alone, but were inhibitory at the same concentration when added to the system in combination with CoA and thia- mine pyrophosphate. Bicarbonate buffer was found to partially inhibit the reactioi..., . Maleate, collidine, imidazole, and arsenate buffers were inhibi- tory to the exchange when added to phosphate in the reaction mixture. Arsenate was the most inhibitory of the buffers studied. The addition of a freshly prepared yeast extract...

  9. 444 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 14, NO. 4, APRIL 2002 Low-Threshold Strain-Compensated InGaAs(N)

    E-Print Network [OSTI]

    Gilchrist, James F.

    lasers utilizing strain-compensating InGaP­GaAsP buffer layers and GaAs0 85P0 15 barrier layers, grownGaAs lower cladding layers, are significantly improved through the use of an InGaP­GaAsP buffer layer. II As and p-In Ga P, respectively. Buffer layers of 2650-Å n-InGaP ( ppm), and 20-Å highly-tensile GaAs P

  10. Testing the Effectiveness of an Avian Flight Diverter for Reducing...

    Open Energy Info (EERE)

    The researchers compared the number of carcasses found below treatment, buffer, and control power lines with a block analysis of variance. Researchers also studied whether...

  11. advanced fabrication techniques: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    recent synthesis methods for FPGAs utilize advanced memory structures, such as a "smart buffer," that require recovery of additional high-level information, specifically...

  12. advanced characterization techniques: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    recent synthesis methods for FPGAs utilize advanced memory structures, such as a "smart buffer," that require recovery of additional high-level information, specifically...

  13. advanced experimental techniques: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    recent synthesis methods for FPGAs utilize advanced memory structures, such as a "smart buffer," that require recovery of additional high-level information, specifically...

  14. advanced nmr-based techniques: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    recent synthesis methods for FPGAs utilize advanced memory structures, such as a "smart buffer," that require recovery of additional high-level information, specifically...

  15. advanced emr techniques: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    recent synthesis methods for FPGAs utilize advanced memory structures, such as a "smart buffer," that require recovery of additional high-level information, specifically...

  16. Efficient solar cooling: first ever non-tracking solar collectors powering a double effect absorption chiller

    E-Print Network [OSTI]

    Poiry, Heather Marie

    2011-01-01T23:59:59.000Z

    to buffer the incoming solar power to the glycol loop so asarea the available power to the solar thermal collector was

  17. Fast interconnect optimization

    E-Print Network [OSTI]

    Li, Zhuo

    2006-04-12T23:59:59.000Z

    ). .................... 15 9Ifalpha1 B-dominates alpha2 at v1, beta1 dominates beta2 at v. ........... 17 10 Candidate tree A(v1) of four candidates. Fields qa, ca and ra are 0 for all candidates. ........................... 20 11 Candidate tree A(v) of four candidates after... the wire is added. .... 21 12 Update of candidate tree A(v) when some nodes are visited. ..... 22 13 Four candidates with their buffer types and locations: alpha4 has no buffer, alpha3 has one buffer at v3, alpha2 has one buffer at v2,andalpha1 consists...

  18. activity reduces intraneuronal: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    transmitted. This paper develops ACE, an active, client-directed tech- nique to improve energy efficiency during web browsing. ACE actively retrieves buffered packets from an...

  19. Oxidative Dissolution of UO2 in a Simulated Groundwater Containing...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    under oxic conditions. Field and laboratory studies have implicated iron sulfide minerals as redox buffers or oxidant scavengers that may slow oxidation of reduced U(VI) solid...

  20. MOLECULAR BEAM PHOTOIONIZATION AND GAS-SURFACE SCATTERING

    E-Print Network [OSTI]

    Ceyer, S.T.

    2010-01-01T23:59:59.000Z

    Detector chamber. (Q) Main chamber ion pump- (S) Rotation (from ion pumps. (A) Buffer chamber ion pump feedthrough. (B) Quadrupole chamber ion pump feedthrough. (C) Coolant