National Library of Energy BETA

Sample records for autostart buffer overflows

  1. V-182: Symantec Endpoint Protection Manager Buffer Overflow Vulnerabil...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    2: Symantec Endpoint Protection Manager Buffer Overflow Vulnerability V-182: Symantec Endpoint Protection Manager Buffer Overflow Vulnerability June 20, 2013 - 6:00am Addthis...

  2. T-626: Xen Multiple Buffer Overflow and Integer Overflow Vulnerabilities

    Broader source: Energy.gov [DOE]

    It was found that the xc_try_bzip2_decode() and xc_try_lzma_decode() decode routines did not correctly check for a possible buffer size overflow in the decoding loop. As well, several integer overflow flaws and missing error/range checking were found that could lead to an infinite loop. A privileged guest user could use these flaws to crash the guest or, possibly, execute arbitrary code in the privileged management domain (Dom0). (CVE-2011-1583)

  3. V-182: Symantec Endpoint Protection Manager Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    Symantec was notified of a pre-authentication buffer overflow found in the Symantec Endpoint Protection Manager (SEPM) and Symantec Endpoint Protection Center (SPC)

  4. V-228: RealPlayer Buffer Overflow and Memory Corruption Error...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    V-228: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote Users Execute ... Lets Remote Users Execute Arbitrary Code V-049: RealPlayer Buffer Overflow and Invalid ...

  5. U-056: Linux Kernel HFS Buffer Overflow Lets Local Users Gain...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Linux Kernel HFS Buffer Overflow Lets Local Users Gain Root Privileges U-056: Linux Kernel HFS Buffer Overflow Lets Local Users Gain Root Privileges December 9, 2011 - 8:00am...

  6. V-219: Kingsoft Writer 2012 WPS Font Names Buffer Overflow Vulnerabili...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    9: Kingsoft Writer 2012 WPS Font Names Buffer Overflow Vulnerability V-219: Kingsoft Writer 2012 WPS Font Names Buffer Overflow Vulnerability August 16, 2013 - 5:52am Addthis...

  7. T-695: Avaya Aura Application Server Buffer Overflow in 'cstore.exe' Lets Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    Avaya Aura Application Server Buffer Overflow in 'cstore.exe' Lets Remote Users Execute Arbitrary Code.

  8. U-154: IBM Rational ClearQuest ActiveX Control Buffer Overflow...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    V-020: Apple QuickTime Multiple Flaws Let Remote Users Execute Arbitrary Code U-126: Cisco Adaptive Security Appliances Port Forwarder ActiveX Control Buffer Overflow ...

  9. T-548: Novell ZENworks Handheld Management (ZHM) ZfHIPCnd.exe buffer overflow

    Broader source: Energy.gov [DOE]

    Novell ZENworks Handheld Management (ZHM) is vulnerable to a heap-based buffer overflow, caused by improper bounds checking by the ZfHIPCnd.exe Access Point process. By sending a specially-crafted request to TCP port 2400, a remote attacker could overflow a buffer and execute arbitrary code on the system with SYSTEM privileges or cause the application to crash.

  10. V-049: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Execute Arbitrary Code | Department of Energy 9: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users Execute Arbitrary Code V-049: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users Execute Arbitrary Code December 18, 2012 - 1:30am Addthis PROBLEM: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users Execute Arbitrary Code PLATFORM: Windows RealPlayer 15.0.6.14 and prior. ABSTRACT: Two vulnerabilities were reported in RealPlayer. REFERENCE

  11. V-114: RealPlayer MP4 Processing Buffer Overflow Vulnerability | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy 14: RealPlayer MP4 Processing Buffer Overflow Vulnerability V-114: RealPlayer MP4 Processing Buffer Overflow Vulnerability March 19, 2013 - 12:01am Addthis PROBLEM: RealPlayer MP4 Processing Buffer Overflow Vulnerability PLATFORM: Versions prior to 16.0.1.18. ABSTRACT: A vulnerability has been reported in RealPlayer REFERENCE LINKS: RealNetworks, Inc Secunia Advisory SA52692 CVE-2013-1750 IMPACT ASSESSMENT: High DISCUSSION: The vulnerability is caused due to an error when

  12. V-093: Symantec PGP Desktop Buffer Overflows Let Local Users...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Secure Mobility Client Heap Overflow Lets Local Users Gain Elevated Privileges V-066: Adobe AcrobatReader Multiple Flaws Lets Remote Users Execute Arbitrary Code and Local Users...

  13. V-049: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    V-049: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users Execute ... The vendor has issued a fix (16.0.0.282). Addthis Related Articles V-228: RealPlayer ...

  14. T-583: Linux Kernel OSF Partition Table Buffer Overflow Lets Local Users Obtain Information

    Broader source: Energy.gov [DOE]

    A local user can create a storage device with specially crafted OSF partition tables. When the kernel automatically evaluates the partition tables, a buffer overflow may occur and data from kernel heap space may leak to user-space.

  15. V-086: IntegraXor ActiveX Control Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    The vulnerability is caused due to an error in the PE3DO32A.ocx ActiveX control and can be exploited to cause a buffer overflow.

  16. U-115: Novell GroupWise Client Address Book Processing Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    The vulnerability is caused due to an error when processing Novell Address Book (".nab") files and can be exploited to cause a heap-based buffer overflow via an overly long email address.

  17. V-228: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Users Execute Arbitrary Code | Department of Energy 8: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote Users Execute Arbitrary Code V-228: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote Users Execute Arbitrary Code August 27, 2013 - 6:00am Addthis PROBLEM: Two vulnerabilities were reported in RealPlayer PLATFORM: RealPlayer 16.0.2.32 and prior ABSTRACT: A remote user can cause arbitrary code to be executed on the target user's system REFERENCE LINKS:

  18. T-664: Apache Santuario Buffer Overflow Lets Remote Users Deny Service

    Broader source: Energy.gov [DOE]

    A buffer overflow exists when creating or verifying XML signatures with RSA keys of sizes on the order of 8192 or more bits. This typically results in a crash and denial of service in applications that verify signatures using keys that could be supplied by an attacker.

  19. T-527: OpenSC Smart Card Serial Number Multiple Buffer Overflow Vulnerabilities

    Broader source: Energy.gov [DOE]

    OpenSC is prone to multiple buffer-overflow vulnerabilities because the application fails to perform adequate boundary checks on user-supplied input. Attackers may leverage these issues to execute arbitrary code in the context of the application. Failed attacks will cause denial-of-service conditions.

  20. T-562: Novell ZENworks Configuration Management novell-tftp.exe Buffer Overflow

    Broader source: Energy.gov [DOE]

    A vulnerability has been reported in Novell ZENworks Configuration Management, which can be exploited by malicious people to compromise a vulnerable system. The vulnerability is caused due to a boundary error in novell-tftp.exe when parsing requests. This can be exploited to cause a heap-based buffer overflow via a specially crafted request sent to UDP port 69. The vulnerability is reported in versions 10.3.1, 10.3.2, and 11.0.

  1. T-556: BMC PATROL Agent Service Daemon stack-based buffer overflow

    Broader source: Energy.gov [DOE]

    Stack-based buffer overflow in BMC PATROL Agent Service Daemon for in Performance Analysis for Servers, Performance Assurance for Servers, and Performance Assurance for Virtual Servers 7.4.00 through 7.5.10; Performance Analyzer and Performance Predictor for Servers 7.4.00 through 7.5.10; and Capacity Management Essentials 1.2.00 (7.4.15) allows remote attackers to execute arbitrary code via a crafted length value in a BGS_MULTIPLE_READS command to TCP port 6768.

  2. T-567: Linux Kernel Buffer Overflow in ldm_frag_add() May Let Local Users Gain Elevated Privileges

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in the Linux Kernel. A local user may be able to obtain elevated privileges on the target system. A physically local user can connect a storage device with a specially crafted LDM partition table to trigger a buffer overflow in the ldm_frag_add() function in 'fs/partitions/ldm.c' and potentially execute arbitrary code with elevated privileges.

  3. T-559: Stack-based buffer overflow in oninit in IBM Informix Dynamic Server (IDS) 11.50 allows remote execution

    Broader source: Energy.gov [DOE]

    Stack-based buffer overflow in oninit in IBM Informix Dynamic Server (IDS) 11.50 allows remote execution attackers to execute arbitrary code via crafted arguments in the USELASTCOMMITTED session environment option in a SQL SET ENVIRONMENT statement

  4. V-188: Apache XML Security XPointer Expressions Processing Buffer...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    8: Apache XML Security XPointer Expressions Processing Buffer Overflow Vulnerability V-188: Apache XML Security XPointer Expressions Processing Buffer Overflow Vulnerability June...

  5. U-048: HP LaserJet Printers Unspecified Flaw Lets Remote Users...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    T-699: EMC AutoStart Buffer Overflows Let Remote Users Execute Arbitrary Code U-049: IBM Tivoli Netcool Reporter CGI Bug Lets Remote Users Inject Commands on the Target System...

  6. Nuclear reactor overflow line

    DOE Patents [OSTI]

    Severson, Wayne J.

    1976-01-01

    The overflow line for the reactor vessel of a liquid-metal-cooled nuclear reactor includes means for establishing and maintaining a continuous bleed flow of coolant amounting to 5 to 10% of the total coolant flow through the overflow line to prevent thermal shock to the overflow line when the reactor is restarted following a trip. Preferably a tube is disposed concentrically just inside the overflow line extending from a point just inside the reactor vessel to an overflow tank and a suction line is provided opening into the body of liquid metal in the reactor vessel and into the annulus between the overflow line and the inner tube.

  7. V-123: VMware ESX / ESXi libxml2 Buffer Underflow Vulnerability...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    (2044373) Addthis Related Articles U-128: VMware ESXESXi Buffer Overflow and Null Pointer Dereference Lets Local Users Gain Elevated Privileges T-552: Cisco Nexus 1000V...

  8. Overflow control valve

    DOE Patents [OSTI]

    Hundal, Rolv; Kessinger, Boyd A.; Parlak, Edward A.

    1984-07-24

    An overflow control valve for use in a liquid sodium coolant pump tank which valve can be extended to create a seal with the pump tank wall or retracted to break the seal thereby accommodating valve removal. An actuating shaft which controls valve disc position also has cams which bear on roller surfaces to force retraction of a sliding cylinder against spring tension to retract the cylinder from sealing contact with the pump tank.

  9. U-207: Pidgin 'mxit_show_message()' Function Stack-Based Buffer...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PROBLEM: Pidgin 'mxitshowmessage()' Function Stack-Based Buffer Overflow Vulnerability. PLATFORM: Versions prior to Pidgin 2.10.5 vulnerable. ABSTRACT: Pidgin is prone to a...

  10. T-629: Avaya WinPDM Multiple Buffer Overflow Vulnerabilities

    Broader source: Energy.gov [DOE]

    Vulnerabilities where malicious people are able to gain system access and execute arbitrary code with the privileges of a local user.

  11. Burst Buffer

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Buffer Burst Buffer If you are interested in using the BB, please send a note to consult@nersc.gov to get enabled. Burst Buffer Architecture and Software Roadmap The Burst Buffer on Cori is a layer of non-volatile storage that sits between the a processors' memory and the parallel file system. The burst buffer will serve to accelerate I/O performance of application on Cori. Read More » Example batch scripts Burst Buffer usage documentation Read More » Burst Buffer Early User Program NERSC has

  12. V-074: IBM Informix Genero libpng Integer Overflow Vulnerability |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 74: IBM Informix Genero libpng Integer Overflow Vulnerability V-074: IBM Informix Genero libpng Integer Overflow Vulnerability January 22, 2013 - 12:11am Addthis PROBLEM: IBM Informix Genero libpng Integer Overflow Vulnerability PLATFORM: IBM Informix Genero releases prior to 2.41 - all platforms ABSTRACT: A vulnerability has been reported in libpng. REFERENCE LINKS: IBM Security Bulletin: 1620982 Secunia Advisory SA51905 Secunia Advisory SA48026 CVE-2011-3026 IMPACT

  13. Urban runoff and combined sewer overflow. [Wastewater treatment

    SciTech Connect (OSTI)

    Moffa, P.E.; Freedman, S.D.; Owens, E.M.; Field, R.; Cibik, C.

    1982-06-01

    The control, treatment and management of urban runoff and sewer overflow are reviewed. Simplified modeling and monitoring techniques are used to characterize urban runoff and to assess control alternatives. (KRM)

  14. V-219: Kingsoft Writer 2012 WPS Font Names Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    Kaveh Ghaemmaghami has discovered a vulnerability in Kingsoft Writer 2012, which can be exploited by malicious people to compromise a user's system.

  15. U-154: IBM Rational ClearQuest ActiveX Control Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in IBM Rational ClearQuest. A remote user can cause arbitrary code to be executed on the target user's system.

  16. U-108: Net4Switch ipswcom ActiveX Control Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    The vulnerability is caused due to a boundary error within the "CxDbgPrint()" function (cxcmrt.dll) when creating a debug message string.

  17. V-056: FreeType BDF Glyph Processing Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    Several vulnerabilities were reported in FreeType. A remote user can cause arbitrary code to be executed on the target user's system.

  18. T-559: Stack-based buffer overflow in oninit in IBM Informix...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    exploit this vulnerability. The specific flaw exists within the oninit process bound to TCP port 9088 when processing the arguments to the USELASTCOMMITTED option in a SQL query....

  19. U-114: IBM Personal Communications WS File Processing Buffer Overflow Vulnerability

    Office of Energy Efficiency and Renewable Energy (EERE)

    A vulnerability in WorkStation files (.ws) by IBM Personal Communications could allow a remote attacker to cause a denial of service (application crash) or potentially execute arbitrary code on vulnerable installations of IBM Personal Communications.

  20. V-148: Novell iPrint Client Unspecified Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    A vulnerability has been reported in Novell iPrint Client, which can be exploited by malicious people to compromise a user's system

  1. U-126: Cisco Adaptive Security Appliances Port Forwarder ActiveX Control Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in Cisco ASA. A remote user can cause arbitrary code to be executed on the target user's system.

  2. BUFFERED WELL FIELD OUTLINES

    U.S. Energy Information Administration (EIA) Indexed Site

    Option Explicit Const cFEETPERMETER As Double 3.281 ' ' deviation factor is applied to the buffer distance ' so with a buffer distance of 100 and factor of 0.05 the ' ...

  3. V-134: Cisco AnyConnect Secure Mobility Client Heap Overflow...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    4: Cisco AnyConnect Secure Mobility Client Heap Overflow Lets Local Users Gain Elevated Privileges V-134: Cisco AnyConnect Secure Mobility Client Heap Overflow Lets Local Users ...

  4. BUFFERED WELL FIELD OUTLINES

    U.S. Energy Information Administration (EIA) Indexed Site

    OIL & GAS FIELD OUTLINES FROM BUFFERED WELLS The VBA Code below builds oil & gas field boundary outlines (polygons) from buffered wells (points). Input well points layer must be a feature class (FC) with the following attributes: Field_name Buffer distance (can be unique for each well to represent reservoirs with different drainage radii) ...see figure below. Copy the code into a new module. Inputs: In ArcMap, data frame named "Task 1" Well FC as first layer (layer 0). Output:

  5. V-134: Cisco AnyConnect Secure Mobility Client Heap Overflow Lets Local

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Users Gain Elevated Privileges | Department of Energy 4: Cisco AnyConnect Secure Mobility Client Heap Overflow Lets Local Users Gain Elevated Privileges V-134: Cisco AnyConnect Secure Mobility Client Heap Overflow Lets Local Users Gain Elevated Privileges April 15, 2013 - 1:30am Addthis PROBLEM: Cisco AnyConnect Secure Mobility Client Heap Overflow Lets Local Users Gain Elevated Privileges PLATFORM: Cisco AnyConnect Secure Mobility Client Cisco Secure Desktop ABSTRACT: Some vulnerabilities

  6. U-177: Lotus Quickr for Domino ActiveX Control Buffer Overflow Lets Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in Lotus Quickr for Domino. A remote user can cause arbitrary code to be executed on the target user's system.

  7. U-128: VMware ESX/ESXi Buffer Overflow and Null Pointer Dereference Lets Local Users Gain Elevated Privileges

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in VMware ESX. A local user can obtain elevated privileges on the target system.

  8. Electrodialysis operation with buffer solution

    DOE Patents [OSTI]

    Hryn, John N.; Daniels, Edward J.; Krumdick, Greg K.

    2009-12-15

    A new method for improving the efficiency of electrodialysis (ED) cells and stacks, in particular those used in chemical synthesis. The process entails adding a buffer solution to the stack for subsequent depletion in the stack during electrolysis. The buffer solution is regenerated continuously after depletion. This buffer process serves to control the hydrogen ion or hydroxide ion concentration so as to protect the active sites of electrodialysis membranes. The process enables electrodialysis processing options for products that are sensitive to pH changes.

  9. Doped LZO buffer layers for laminated conductors

    DOE Patents [OSTI]

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2010-03-23

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  10. Burst Buffer Architecture and Software Roadmap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Burst Buffer Architecture Burst Buffer Architecture and Software Roadmap NERSC has been working with Cray to bring BurstBuffer technology to the users of Cori. The NERSC BurstBuffer is based on Cray DataWarp that utilizes flash or SSD (solid-state drive) technologies to significantly increase the I/O performance on Cori. Motivation In order to meet users' requests for better I/O performance NERSC is installing a Burst Buffer. There are two aspects of I/O performance. One aspect is the total

  11. Signature-based store checking buffer

    DOE Patents [OSTI]

    Sridharan, Vilas; Gurumurthi, Sudhanva

    2015-06-02

    A system and method for optimizing redundant output verification, are provided. A hardware-based store fingerprint buffer receives multiple instances of output from multiple instances of computation. The store fingerprint buffer generates a signature from the content included in the multiple instances of output. When a barrier is reached, the store fingerprint buffer uses the signature to verify the content is error-free.

  12. Task QA plan for Modified Prototypic Hydragard{trademark} Sampler Overflow System Demonstration at TNX

    SciTech Connect (OSTI)

    Snyder, T.K.

    1993-10-04

    The primary objective of this task is to evaluate the proposed design modifications to the sample system, including the adequacy of the recommended eductor and the quality of samples obtained from the modified system. Presently, the sample streams are circulated from the originating tank, through a Hydragard{trademark} sampler system, and back to the originating tank. The overflow from the Hydragard{trademark} sampler flows to the Recycle Collection Tank (RCT). This report outlines the planned quality assurance controls for the design modification task, including organization and personnel, surveillances, and records package.

  13. T-660: OpenSSH on FreeBSD Has Buffer Overflow in pam_thread() That Lets Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    The module does not adequately validate user input leading to an cross-site scripting (XSS) possibility in certain circumstances.

  14. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2006-10-31

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  15. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2010-06-15

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  16. Target buffer assessment for accelerator driven transmuters.

    SciTech Connect (OSTI)

    Gohar, Y.

    2002-10-08

    Accelerator driven transmuters use a buffer region to protect the structural and the cladding materials of the transmuter from the radiation damage caused by the high-energy spallation neutrons, to accommodate the coolant channels of the self cooled targets, and to have an insignificant effect on the neutron utilization for the transmutation process. These functions are contradicting with respect to the buffer thickness. An extension of the target region in the axial direction (the proton beam direction) is also required to act as a neutron multiplier for the forward component of the high-energy spallation neutrons and a reflector to minimize the neutron leakage. The buffer assessment was performed as a function of its thickness with different proton energies for a self-cooled Lead-Bismuth Eutectic and a sodium-cooled tungsten targets. The analyses show that the number of generated neutrons per proton has a low sensitivity to the buffer thickness. However, the number of neutrons reaching the transmuter is significantly reduced as the buffer thickness is increased. The transmuter neutrons dominate the nuclear responses in the structural material outside the target buffer. The length of the axial target extension is determined as a function of the proton beam energy.

  17. Catalyst functionalized buffer sorbent pebbles for rapid separation...

    Office of Scientific and Technical Information (OSTI)

    Catalyst functionalized buffer sorbent pebbles for rapid separation of carbon dioxide from gas mixtures Title: Catalyst functionalized buffer sorbent pebbles for rapid separation ...

  18. Buffer layers on biaxially textured metal substrates

    DOE Patents [OSTI]

    Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

    2001-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  19. A directed-overflow and damage-control N -glycosidase in riboflavin biosynthesis

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Frelin, Océane; Huang, Lili; Hasnain, Ghulam; Jeffryes, James G.; Ziemak, Michael J.; Rocca, James R.; Wang, Bing; Rice, Jennifer; Roje, Sanja; Yurgel, Svetlana N.; et al

    2015-02-15

    Plants and bacteria synthesize the essential human micronutrient riboflavin (vitamin B2) via the same multistep pathway. The early intermediates of this pathway are notoriously reactive, and may be overproduced in vivo because riboflavin biosynthesis enzymes lack feedback controls. Here we demonstrate disposal of riboflavin intermediates by COG3236 (DUF1768), a protein of previously unknown function that is fused to two different riboflavin pathway enzymes in plants and bacteria (RIBR and RibA, respectively). We present cheminformatic, biochemical, genetic, and genomic evidence to show that: (i) plant and bacterial COG3236 proteins cleave the N-glycosidic bond of the first two intermediates of riboflavin biosynthesis,more » yielding relatively innocuous products; (ii) certain COG3236 proteins are in a multienzyme riboflavin biosynthesis complex that gives them privileged access to riboflavin intermediates; and (iii) COG3236 action in Arabidopsis thaliana and Escherichia coli helps maintain flavin levels. We find COG3236 proteins thus illustrate two emerging principles in chemical biology: directed overflow metabolism, in which excess flux is diverted out of a pathway, and the pre-emption of damage from reactive metabolites.« less

  20. FROM HOT JUPITERS TO SUPER-EARTHS VIA ROCHE LOBE OVERFLOW

    SciTech Connect (OSTI)

    Valsecchi, Francesca; Rasio, Frederic A.; Steffen, Jason H.

    2014-09-20

    Through tidal dissipation in a slowly spinning host star, the orbits of many hot Jupiters may decay down to the Roche limit. We expect that the ensuing mass transfer will be stable in most cases. Using detailed numerical calculations, we find that this evolution is quite rapid, potentially leading to the complete removal of the gaseous envelope in a few gigayears, and leaving behind an exposed rocky core (a {sup h}ot super-Earth{sup )}. Final orbital periods are quite sensitive to the details of the planet's mass-radius relation and to the effects of irradiation and photo-evaporation, but could be as short as a few hours or as long as several days. Our scenario predicts the existence of planets with intermediate masses ({sup h}ot Neptunes{sup )} that should be found precisely at their Roche limit and in the process of losing mass through Roche lobe overflow. The observed excess of small single-planet candidate systems observed by Kepler may also be the result of this process. If so, the properties of their host stars should track those of the hot Jupiters. Moreover, the number of systems that produced hot Jupiters could be two to three times larger than one would infer from contemporary observations.

  1. Early Users to Test New Burst Buffer on Cori

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Early Users to Test New Burst Buffer on Cori Early Users to Test New Burst Buffer on Cori Designed to Accelerate IO Performance October 5, 2015 Corimockup NERSC has selected a ...

  2. The exometabolome of Clostridium thermocellum reveals overflow metabolism at high cellulose loading

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Holwerda, Evert K.; Thorne, Philip G.; Olson, Daniel G.; Amador-Noguez, Daniel; Engle, Nancy L.; Tschaplinski, Timothy J.; van Dijken, Johannes P.; Lynd, Lee R.

    2014-10-21

    Background: Clostridium thermocellum is a model thermophilic organism for the production of biofuels from lignocellulosic substrates. The majority of publications studying the physiology of this organism use substrate concentrations of ≤10 g/L. However, industrially relevant concentrations of substrate start at 100 g/L carbohydrate, which corresponds to approximately 150 g/L solids. To gain insight into the physiology of fermentation of high substrate concentrations, we studied the growth on, and utilization of high concentrations of crystalline cellulose varying from 50 to 100 g/L by C. thermocellum. Results: Using a defined medium, batch cultures of C. thermocellum achieved 93% conversion of cellulose (Avicel)more » initially present at 100 g/L. The maximum rate of substrate utilization increased with increasing substrate loading. During fermentation of 100 g/L cellulose, growth ceased when about half of the substrate had been solubilized. However, fermentation continued in an uncoupled mode until substrate utilization was almost complete. In addition to commonly reported fermentation products, amino acids - predominantly L-valine and L-alanine - were secreted at concentrations up to 7.5 g/L. Uncoupled metabolism was also accompanied by products not documented previously for C. thermocellum, including isobutanol, meso- and RR/SS-2,3-butanediol and trace amounts of 3-methyl-1-butanol, 2-methyl-1-butanol and 1-propanol. We hypothesize that C. thermocellum uses overflow metabolism to balance its metabolism around the pyruvate node in glycolysis. In conclusion: C. thermocellum is able to utilize industrially relevant concentrations of cellulose, up to 93 g/L. We report here one of the highest degrees of crystalline cellulose utilization observed thus far for a pure culture of C. thermocellum, the highest maximum substrate utilization rate and the highest amount of isobutanol produced by a wild-type organism.« less

  3. The exometabolome of Clostridium thermocellum reveals overflow metabolism at high cellulose loading

    SciTech Connect (OSTI)

    Holwerda, Evert K.; Thorne, Philip G.; Olson, Daniel G.; Amador-Noguez, Daniel; Engle, Nancy L.; Tschaplinski, Timothy J.; van Dijken, Johannes P.; Lynd, Lee R.

    2014-10-21

    Background: Clostridium thermocellum is a model thermophilic organism for the production of biofuels from lignocellulosic substrates. The majority of publications studying the physiology of this organism use substrate concentrations of ≤10 g/L. However, industrially relevant concentrations of substrate start at 100 g/L carbohydrate, which corresponds to approximately 150 g/L solids. To gain insight into the physiology of fermentation of high substrate concentrations, we studied the growth on, and utilization of high concentrations of crystalline cellulose varying from 50 to 100 g/L by C. thermocellum. Results: Using a defined medium, batch cultures of C. thermocellum achieved 93% conversion of cellulose (Avicel) initially present at 100 g/L. The maximum rate of substrate utilization increased with increasing substrate loading. During fermentation of 100 g/L cellulose, growth ceased when about half of the substrate had been solubilized. However, fermentation continued in an uncoupled mode until substrate utilization was almost complete. In addition to commonly reported fermentation products, amino acids - predominantly L-valine and L-alanine - were secreted at concentrations up to 7.5 g/L. Uncoupled metabolism was also accompanied by products not documented previously for C. thermocellum, including isobutanol, meso- and RR/SS-2,3-butanediol and trace amounts of 3-methyl-1-butanol, 2-methyl-1-butanol and 1-propanol. We hypothesize that C. thermocellum uses overflow metabolism to balance its metabolism around the pyruvate node in glycolysis. In conclusion: C. thermocellum is able to utilize industrially relevant concentrations of cellulose, up to 93 g/L. We report here one of the highest degrees of crystalline cellulose utilization observed thus far for a pure culture of C. thermocellum, the highest maximum substrate utilization rate and the highest amount of isobutanol produced by a wild-type organism.

  4. Buffer for a gamma-insensitive optical sensor with gas and a buffer assembly

    DOE Patents [OSTI]

    Kruger, H.W.

    1994-05-10

    A buffer assembly is disclosed for a gamma-insensitive gas avalanche focal plane array operating in the ultra-violet/visible/infrared energy wavelengths and using a photocathode and an avalanche gas located in a gap between an anode and the photocathode. The buffer assembly functions to eliminate chemical compatibility between the gas composition and the materials of the photocathode. The buffer assembly in the described embodiment is composed of two sections, a first section constructed of glass honeycomb under vacuum and a second section defining a thin barrier film or membrane constructed, for example, of Al and Be, which is attached to and supported by the honeycomb. The honeycomb section, in turn, is supported by and adjacent to the photocathode. 7 figures.

  5. Buffer layers and articles for electronic devices

    DOE Patents [OSTI]

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  6. System and method for implementing periodic early discard in on-chip buffer memories of network elements

    DOE Patents [OSTI]

    Francini, Andrea

    2013-05-14

    An advance is made over the prior art in accordance with the principles of the present invention that is directed to a new approach for a system and method for a buffer management scheme called Periodic Early Discard (PED). The invention builds on the observation that, in presence of TCP traffic, the length of a queue can be stabilized by selection of an appropriate frequency for packet dropping. For any combination of number of TCP connections and distribution of the respective RTT values, there exists an ideal packet drop frequency that prevents the queue from over-flowing or under-flowing. While the value of the ideal packet drop frequency may quickly change over time and is sensitive to the series of TCP connections affected by past packet losses, and most of all is impossible to compute inline, it is possible to approximate it with a margin of error that allows keeping the queue occupancy within a pre-defined range for extended periods of time. The PED scheme aims at tracking the (unknown) ideal packet drop frequency, adjusting the approximated value based on the evolution of the queue occupancy, with corrections of the approximated packet drop frequency that occur at a timescale that is comparable to the aggregate time constant of the set of TCP connections that traverse the queue.

  7. Early Users to Test New Burst Buffer on Cori

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Early Users to Test New Burst Buffer on Cori Early Users to Test New Burst Buffer on Cori Designed to Accelerate I/O Performance October 5, 2015 Corimockup NERSC has selected a number of HPC research projects to participate in the center's new Burst Buffer Early User Program, where they will be able to test and run their codes using the new Burst Buffer feature on the center's newest supercomputer, Cori. Cori Phase 1, recently installed in the new Computational Research and Theory building at

  8. CHEMICAL SOLUTION DEPOSITION BASED OXIDE BUFFERS AND YBCO COATED...

    Office of Scientific and Technical Information (OSTI)

    to obtain the flexible, biaxially oriented copper, nickel or nickel-alloy substrates. Buffers and Rare Earth Barium Copper Oxide (REBCO) superconductors have been deposited ...

  9. Back contact buffer layer for thin-film solar cells

    DOE Patents [OSTI]

    Compaan, Alvin D.; Plotnikov, Victor V.

    2014-09-09

    A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

  10. Epitaxial Growth of Strontium Bismuth Tantalate/Niobate of Buffered...

    Office of Scientific and Technical Information (OSTI)

    of Strontium Bismuth TantalateNiobate of Buffered Magnesium Oxide Substrates Citation Details In-Document Search Title: Epitaxial Growth of Strontium Bismuth TantalateNiobate ...

  11. Buffer layer for thin film structures (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate ...

  12. Methods for improved growth of group III nitride buffer layers

    DOE Patents [OSTI]

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  13. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOE Patents [OSTI]

    Morse, Jeffrey D.; Cooper, Gregory A.

    2002-01-01

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  14. Mitigation of substrate defects in reticles using multilayer buffer layers

    DOE Patents [OSTI]

    Mirkarimi, Paul B.; Bajt, Sasa; Stearns, Daniel G.

    2001-01-01

    A multilayer film is used as a buffer layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The multilayer buffer layer deposited intermediate the reticle substrate and the reflective coating produces a smoothing of small particles and other defects on the reticle substrate. The reduction in defect size is controlled by surface relaxation during the buffer layer growth process and by the degree of intermixing and volume contraction of the materials at the multilayer interfaces. The buffer layers are deposited at near-normal incidence via a low particulate ion beam sputtering process. The growth surface of the buffer layer may also be heated by a secondary ion source to increase the degree of intermixing and improve the mitigation of defects.

  15. Replenishing data descriptors in a DMA injection FIFO buffer

    DOE Patents [OSTI]

    Archer, Charles J.; Blocksome, Michael A.; Cernohous, Bob R.; Heidelberger, Philip; Kumar, Sameer; Parker, Jeffrey J.

    2011-10-11

    Methods, apparatus, and products are disclosed for replenishing data descriptors in a Direct Memory Access (`DMA`) injection first-in-first-out (`FIFO`) buffer that include: determining, by a messaging module on an origin compute node, whether a number of data descriptors in a DMA injection FIFO buffer exceeds a predetermined threshold, each data descriptor specifying an application message for transmission to a target compute node; queuing, by the messaging module, a plurality of new data descriptors in a pending descriptor queue if the number of the data descriptors in the DMA injection FIFO buffer exceeds the predetermined threshold; establishing, by the messaging module, interrupt criteria that specify when to replenish the injection FIFO buffer with the plurality of new data descriptors in the pending descriptor queue; and injecting, by the messaging module, the plurality of new data descriptors into the injection FIFO buffer in dependence upon the interrupt criteria.

  16. Gilliam County Riparian Buffers; 2003-2004 Annual Reports.

    SciTech Connect (OSTI)

    Coiner, Josh

    2004-06-01

    Interest appears to be at an all-time high for riparian conservation programs in Gilliam County. With the recently added Herbaceous Buffer and the already established CREP program interest is booming. However, more and more people are turning towards the herbaceous buffer because of expense. The riparian forest buffer is becoming too expensive. Even with the excellent cost share and incentives landowners are having trouble with Farm Service Agency's payment limitation. Because of this payment limitation landowners are not receiving their full rental and incentive payments, usually in year one. This has cooled the installation of riparian forest buffers and peaked interest in the CP-29 (Herbaceous Buffer for Wildlife). Either way, riparian lands are being enhanced and water quality is being improved. Year three should be very similar to the accomplishments of year 2. There has already been several projects proposed that may or may not be approved during year 3. I am currently working on three projects that are all over 2.5 miles long on each side and total anywhere from 60 to 250 acres in size. Along with these three projects there at least seven small projects being proposed. Four of those projects are riparian forest buffers and the remaining are herbaceous buffers.

  17. Enhanced adhesion for LIGA microfabrication by using a buffer layer

    DOE Patents [OSTI]

    Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

    2001-01-01

    The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

  18. Buffer layers for REBCO films for use in superconducting devices

    DOE Patents [OSTI]

    Goyal, Amit; Wee, Sung-Hun

    2014-06-10

    A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

  19. Enhanced adhesion for LIGA microfabrication by using a buffer layer

    DOE Patents [OSTI]

    Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

    2004-01-27

    The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

  20. Buffer layers on biaxially textured metal substrates (Patent...

    Office of Scientific and Technical Information (OSTI)

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzingannealing in ...

  1. Method of depositing buffer layers on biaxially textured metal...

    Office of Scientific and Technical Information (OSTI)

    eu; gd; tb; tm; resup1subx; resup2sub1-xsub2; osub3; buffer; layer; deposited; sol-gel; metal-organic; decomposition; laminate; article; layer; ybco; resup1subx; ...

  2. Optimizing the availability of a buffered industrial process

    DOE Patents [OSTI]

    Martz, Jr., Harry F.; Hamada, Michael S.; Koehler, Arthur J.; Berg, Eric C.

    2004-08-24

    A computer-implemented process determines optimum configuration parameters for a buffered industrial process. A population size is initialized by randomly selecting a first set of design and operation values associated with subsystems and buffers of the buffered industrial process to form a set of operating parameters for each member of the population. An availability discrete event simulation (ADES) is performed on each member of the population to determine the product-based availability of each member. A new population is formed having members with a second set of design and operation values related to the first set of design and operation values through a genetic algorithm and the product-based availability determined by the ADES. Subsequent population members are then determined by iterating the genetic algorithm with product-based availability determined by ADES to form improved design and operation values from which the configuration parameters are selected for the buffered industrial process.

  3. CHEMICAL SOLUTION DEPOSITION BASED OXIDE BUFFERS AND YBCO COATED CONDUCTORS

    SciTech Connect (OSTI)

    Paranthaman, Mariappan Parans

    2011-01-01

    We have reviewed briefly the growth of buffer and high temperature superconducting oxide thin films using a chemical solution deposition (CSD) method. In the Rolling-Assisted Biaxially Textured Substrates (RABiTS) process, developed at Oak Ridge National Laboratory, utilizes the thermo mechanical processing to obtain the flexible, biaxially oriented copper, nickel or nickel-alloy substrates. Buffers and Rare Earth Barium Copper Oxide (REBCO) superconductors have been deposited epitaxially on the textured nickel alloy substrates. The starting substrate serves as a template for the REBCO layer, which has substantially fewer weak links. Buffer layers play a major role in fabricating the second generation REBCO wire technology. The main purpose of the buffer layers is to provide a smooth, continuous and chemically inert surface for the growth of the REBCO film, while transferring the texture from the substrate to the superconductor layer. To achieve this, the buffer layers need to be epitaxial to the substrate, i.e. they have to nucleate and grow in the same bi-axial texture provided by the textured metal foil. The most commonly used RABiTS multi-layer architectures consist of a starting template of biaxially textured Ni-5 at.% W (Ni-W) substrate with a seed (first) layer of Yttrium Oxide (Y2O3), a barrier (second) layer of Yttria Stabilized Zirconia (YSZ), and a Cerium Oxide (CeO2) cap (third) layer. These three buffer layers are generally deposited using physical vapor deposition (PVD) techniques such as reactive sputtering. On top of the PVD template, REBCO film is then grown by a chemical solution deposition. This article reviews in detail about the list of oxide buffers and superconductor REBCO films grown epitaxially on single crystal and/or biaxially textured Ni-W substrates using a CSD method.

  4. Message communications of particular message types between compute nodes using DMA shadow buffers

    DOE Patents [OSTI]

    Blocksome, Michael A.; Parker, Jeffrey J.

    2010-11-16

    Message communications of particular message types between compute nodes using DMA shadow buffers includes: receiving a buffer identifier specifying an application buffer having a message of a particular type for transmission to a target compute node through a network; selecting one of a plurality of shadow buffers for a DMA engine on the compute node for storing the message, each shadow buffer corresponding to a slot of an injection FIFO buffer maintained by the DMA engine; storing the message in the selected shadow buffer; creating a data descriptor for the message stored in the selected shadow buffer; injecting the data descriptor into the slot of the injection FIFO buffer corresponding to the selected shadow buffer; selecting the data descriptor from the injection FIFO buffer; and transmitting the message specified by the selected data descriptor through the data communications network to the target compute node.

  5. Rare earth zirconium oxide buffer layers on metal substrates

    DOE Patents [OSTI]

    Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

    2001-01-01

    A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  6. Method of depositing buffer layers on biaxially textured metal substrates

    DOE Patents [OSTI]

    Beach, David B.; Morrell, Jonathan S.; Paranthaman, Mariappan; Chirayil, Thomas; Specht, Eliot D.; Goyal, Amit

    2002-08-27

    A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  7. Buffer layers on metal alloy substrates for superconducting tapes

    DOE Patents [OSTI]

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-10-05

    An article including a substrate, at least one intermediate layer upon the surface of the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the at least one intermediate layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected I.sub.c 's of over 200 Amperes across a sample 1 cm wide.

  8. SMOOTH OIL & GAS FIELD OUTLINES MADE FROM BUFFERED WELLS

    U.S. Energy Information Administration (EIA) Indexed Site

    The VBA code provided at the bottom of this document is an updated version (from ArcGIS 9.0 to ArcGIS 9.2) of the polygon smoothing algorithm described below. A bug that occurred when multiple wells had the same location was also fixed. SMOOTH OIL & GAS FIELD OUTLINE POLYGONS MADE FROM BUFFERED WELLS Why smooth buffered field outlines? See the issues in the figure below: [pic] The smoothing application provided as VBA code below does the following: Adds area to the concave portions; doesn't

  9. Buffered coscheduling for parallel programming and enhanced fault tolerance

    DOE Patents [OSTI]

    Petrini, Fabrizio; Feng, Wu-chun

    2006-01-31

    A computer implemented method schedules processor jobs on a network of parallel machine processors or distributed system processors. Control information communications generated by each process performed by each processor during a defined time interval is accumulated in buffers, where adjacent time intervals are separated by strobe intervals for a global exchange of control information. A global exchange of the control information communications at the end of each defined time interval is performed during an intervening strobe interval so that each processor is informed by all of the other processors of the number of incoming jobs to be received by each processor in a subsequent time interval. The buffered coscheduling method of this invention also enhances the fault tolerance of a network of parallel machine processors or distributed system processors

  10. Buffer layers on metal alloy substrates for superconducting tapes

    DOE Patents [OSTI]

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-06-29

    An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

  11. Sol-gel deposition of buffer layers on biaxially textured metal...

    Office of Scientific and Technical Information (OSTI)

    Sol-gel deposition of buffer layers on biaxially textured metal substances Citation Details In-Document Search Title: Sol-gel deposition of buffer layers on biaxially textured ...

  12. Buffer layer for thin film structures (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Buffer layer for thin film structures Citation Details In-Document Search Title: Buffer layer for thin film structures A composite structure including a base substrate and a layer...

  13. Photo-induced wettability of TiO{sub 2} film with Au buffer layer

    SciTech Connect (OSTI)

    Purkayastha, Debarun Dhar; Sangani, L. D. Varma; Krishna, M. Ghanashyam; Madhurima, V.

    2014-04-24

    The effect of thickness of Au buffer layer (15-25 nm) between TiO{sub 2} film and substrate on the wettability of TiO{sub 2} films is reported. TiO{sub 2} films grown on Au buffer layer have a higher contact angle of 96-;100 as compared to 47.6o for the film grown without buffer layer. The transition from hydrophobicity to hydrophilicity under UV irradiation occurs within 10 min. for the buffer layered films whereas it is almost 30 min. for the film grown without buffer layer. The enhanced photo induced hydrophilicity is shown to be surface energy driven.

  14. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOE Patents [OSTI]

    Sankar, Sambasivan; Goyal, Amit; Barnett, Scott A.; Kim, Ilwon; Kroeger, Donald M.

    2004-08-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

  15. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOE Patents [OSTI]

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

    2009-03-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  16. Buffer layers on rolled nickel or copper as superconductor substrates

    DOE Patents [OSTI]

    Paranthaman, Mariappan; Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /CeO.sub.2 /Ni, RE.sub.2 O.sub.3 /Ni (RE=Rare Earth), and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /CeO.sub.2 /Cu, RE.sub.2 O.sub.3 /Cu, and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approach, which includes chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

  17. Superconducting composite with multilayer patterns and multiple buffer layers

    DOE Patents [OSTI]

    Wu, X.D.; Muenchausen, R.E.

    1993-10-12

    An article of manufacture is described including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superconductor. 5 figures.

  18. Doped Y.sub.2O.sub.3 buffer layers for laminated conductors

    DOE Patents [OSTI]

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2007-08-21

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y.sub.2O.sub.3 and a dopant for blocking cation diffusion through the Y.sub.2O.sub.3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  19. Inert Gas Buffered Milling and Particle Size Separation of μm...

    Office of Scientific and Technical Information (OSTI)

    Size Separation of m-Scale Superconducting Precursor Powders Citation Details In-Document Search Title: Inert Gas Buffered Milling and Particle Size Separation of ...

  20. Superconducting composite with multilayer patterns and multiple buffer layers

    DOE Patents [OSTI]

    Wu, Xin D.; Muenchausen, Ross E.

    1993-01-01

    An article of manufacture including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superco n FIELD OF THE INVENTION The present invention relates to the field of superconducting articles having two distinct regions of superconductive material with differing in-plane orientations whereby the conductivity across the boundary between the two regions can be tailored. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  1. Catalyst functionalized buffer sorbent pebbles for rapid separation of carbon dioxide from gas mixtures

    DOE Patents [OSTI]

    Aines, Roger D

    2015-03-31

    A method for separating CO.sub.2 from gas mixtures uses a slurried media impregnated with buffer compounds and coating the solid media with a catalyst or enzyme that promotes the transformation of CO.sub.2 to carbonic acid. Buffer sorbent pebbles with a catalyst or enzyme coating are provided for rapid separation of CO.sub.2 from gas mixtures.

  2. Catalyst functionalized buffer sorbent pebbles for rapid separation of carbon dioxide from gas mixtures

    DOE Patents [OSTI]

    Aines, Roger D.

    2013-03-12

    A method for separating CO.sub.2 from gas mixtures uses a slurried media impregnated with buffer compounds and coating the solid media with a catalyst or enzyme that promotes the transformation of CO.sub.2 to carbonic acid. Buffer sorbent pebbles with a catalyst or enzyme coating are provided for rapid separation of CO.sub.2 from gas mixtures.

  3. Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom

    DOE Patents [OSTI]

    Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    The present invention provides methods and biaxially textured articles having a deformed epitaxial layer formed therefrom for use with high temperature superconductors, photovoltaic, ferroelectric, or optical devices. A buffer layer is epitaxially deposited onto biaxially-textured substrates and then mechanically deformed. The deformation process minimizes or eliminates grooves, or other irregularities, formed on the buffer layer while maintaining the biaxial texture of the buffer layer. Advantageously, the biaxial texture of the buffer layer is not altered during subsequent heat treatments of the deformed buffer. The present invention provides mechanical densification procedures which can be incorporated into the processing of superconducting films through the powder deposit or precursor approaches without incurring unfavorable high-angle grain boundaries.

  4. Propagation of misfit dislocations from buffer/Si interface into Si

    DOE Patents [OSTI]

    Liliental-Weber, Zuzanna; Maltez, Rogerio Luis; Morkoc, Hadis; Xie, Jinqiao

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  5. Buffer architecture for biaxially textured structures and method of fabricating same

    DOE Patents [OSTI]

    Norton, David P.; Park, Chan; Goyal, Amit

    2004-04-06

    The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO.sub.2 and/or HfO.sub.2. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO.sub.2 and HfO.sub.2. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1.times.10.sup.-5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  6. Reprogrammable read only variable threshold transistor memory with isolated addressing buffer

    DOE Patents [OSTI]

    Lodi, Robert J.

    1976-01-01

    A monolithic integrated circuit, fully decoded memory comprises a rectangular array of variable threshold field effect transistors organized into a plurality of multi-bit words. Binary address inputs to the memory are decoded by a field effect transistor decoder into a plurality of word selection lines each of which activates an address buffer circuit. Each address buffer circuit, in turn, drives a word line of the memory array. In accordance with the word line selected by the decoder the activated buffer circuit directs reading or writing voltages to the transistors comprising the memory words. All of the buffer circuits additionally are connected to a common terminal for clearing all of the memory transistors to a predetermined state by the application to the common terminal of a large magnitude voltage of a predetermined polarity. The address decoder, the buffer and the memory array, as well as control and input/output control and buffer field effect transistor circuits, are fabricated on a common substrate with means provided to isolate the substrate of the address buffer transistors from the remainder of the substrate so that the bulk clearing function of simultaneously placing all of the memory transistors into a predetermined state can be performed.

  7. GaAs buffer layer technique for vertical nanowire growth on Si substrate

    SciTech Connect (OSTI)

    Xu, Xiaoqing Parizi, Kokab B.; Huo, Yijie; Kang, Yangsen; Philip Wong, H.-S.; Li, Yang

    2014-02-24

    Gold catalyzed vapor-liquid-solid method is widely applied to IIIV nanowire (NW) growth on Si substrate. However, the easy oxidation of Si, possible Si contamination in the NWs, high defect density in the NWs, and high sensitivity of the NW morphology to growth conditions largely limit its controllability. In this work, we developed a buffer layer technique by introducing a GaAs thin film with predefined polarity as a template. It is found that samples grown on these buffer layers all have high vertical NW yields in general, due to the single-orientation of the buffer layers. Low temperature buffer with smoother surface leads to highest yield of vertical NWs, while high temperature (HT) buffer with better crystallinity results in perfect NW quality. The defect-free property we observed here is very promising for optoelectronic device applications based on GaAs NW. Moreover, the buffer layers can eliminate Si contamination by preventing Si-Au alloy formation and by increasing the thickness of the Si diffusion barrier, thus providing more flexibility to vertical NW growth. The buffer layer technique we demonstrated here could be easily extended to other III-V on Si system for electronic and photonic applications.

  8. Comparator circuits with local ramp buffering for a column-parallel single slope ADC

    DOE Patents [OSTI]

    Milkov, Mihail M.

    2016-04-26

    A comparator circuit suitable for use in a column-parallel single-slope analog-to-digital converter comprises a comparator, an input voltage sampling switch, a sampling capacitor arranged to store a voltage which varies with an input voltage when the sampling switch is closed, and a local ramp buffer arranged to buffer a global voltage ramp applied at an input. The comparator circuit is arranged such that its output toggles when the buffered global voltage ramp exceeds the stored voltage. Both DC- and AC-coupled comparator embodiments are disclosed.

  9. Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates

    DOE Patents [OSTI]

    Paranthaman, Mariappan (Knoxville, TN); Goyal, Amit (Knoxville, TN); Kroeger, Donald M. (Knoxville, TN); List, III, Frederic A. (Andersonville, TN)

    2002-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

  10. MgO buffer layers on rolled nickel or copper as superconductor substrates

    DOE Patents [OSTI]

    Paranthaman, Mariappan (Knoxville, TN); Goyal, Amit (Knoxville, TN); Kroeger, Donald M. (Knoxville, TN); List, III, Frederic A. (Andersonville, TN)

    2001-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

  11. Critical CuI buffer layer surface density for organic molecular crystal orientation change

    SciTech Connect (OSTI)

    Ahn, Kwangseok; Kim, Jong Beom; Lee, Dong Ryeol; Kim, Hyo Jung; Lee, Hyun Hwi

    2015-01-21

    We have determined the critical surface density of the CuI buffer layer inserted to change the preferred orientation of copper phthalocyanine (CuPc) crystals grown on the buffer layer. X-ray reflectivity measurements were performed to obtain the density profiles of the buffer layers and out-of-plane and 2D grazing-incidence X-ray diffraction measurements were performed to determine the preferred orientations of the molecular crystals. Remarkably, it was found that the preferred orientation of the CuPc film is completely changed from edge-on (1 0 0) to face-on (1 1 −2) by a CuI buffer layer with a very low surface density, so low that a large proportion of the substrate surface is bare.

  12. Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

    DOE Patents [OSTI]

    Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

    2005-10-18

    An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  13. Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

    DOE Patents [OSTI]

    Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

    2003-09-09

    An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  14. Optically pumped alkali laser and amplifier using helium-3 buffer gas

    DOE Patents [OSTI]

    Beach, Raymond J.; Page, Ralph; Soules, Thomas; Stappaerts, Eddy; Wu, Sheldon Shao Quan

    2010-09-28

    In one embodiment, a laser oscillator is provided comprising an optical cavity, the optical cavity including a gain medium including an alkali vapor and a buffer gas, the buffer gas including .sup.3He gas, wherein if .sup.4He gas is also present in the buffer gas, the ratio of the concentration of the .sup.3He gas to the .sup.4He gas is greater than 1.37.times.10.sup.-6. Additionally, an optical excitation source is provided. Furthermore, the laser oscillator is capable of outputting radiation at a first frequency. In another embodiment, an apparatus is provided comprising a gain medium including an alkali vapor and a buffer gas including .sup.3He gas, wherein if .sup.4He gas is also present in the buffer gas, the ratio of the concentration of the .sup.3He gas to the .sup.4He gas is greater than 1.37.times.10.sup.-6. Other embodiments are also disclosed.

  15. Buffer layer between a planar optical concentrator and a solar cell

    SciTech Connect (OSTI)

    Solano, Manuel E.; Barber, Greg D.; Lakhtakia, Akhlesh; Faryad, Muhammad; Monk, Peter B.; Mallouk, Thomas E.

    2015-09-15

    The effect of inserting a buffer layer between a periodically multilayered isotropic dielectric (PMLID) material acting as a planar optical concentrator and a photovoltaic solar cell was theoretically investigated. The substitution of the photovoltaic material by a cheaper dielectric material in a large area of the structure could reduce the fabrication costs without significantly reducing the efficiency of the solar cell. Both crystalline silicon (c-Si) and gallium arsenide (GaAs) were considered as the photovoltaic material. We found that the buffer layer can act as an antireflection coating at the interface of the PMLID and the photovoltaic materials, and the structure increases the spectrally averaged electron-hole pair density by 36% for c-Si and 38% for GaAs compared to the structure without buffer layer. Numerical evidence indicates that the optimal structure is robust with respect to small changes in the grating profile.

  16. Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

    DOE Patents [OSTI]

    Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

    2015-05-26

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

  17. Electron dynamics of the buffer layer and bilayer graphene on SiC

    SciTech Connect (OSTI)

    Shearer, Alex J.; Caplins, Benjamin W.; Suich, David E.; Harris, Charles B., E-mail: cbharris@berkeley.edu [Department of Chemistry, University of California at Berkeley, Berkeley, California 94720 (United States); Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Johns, James E. [Department of Chemistry, University of Minnesota Twin Cities, Minneapolis, Minnesota 55455 (United States); Hersam, Mark C. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-06-09

    Angle- and time-resolved two-photon photoemission (TPPE) was used to investigate electronic states in the buffer layer of 4H-SiC(0001). An image potential state (IPS) series was observed on this strongly surface-bound buffer layer, and dispersion measurements indicated free-electron-like behavior for all states in this series. These results were compared with TPPE taken on bilayer graphene, which also show the existence of a free-electron-like IPS series. Lifetimes for the n?=?2, and n?=?3 states were obtained from time-resolved TPPE; slightly increased lifetimes were observed in the bilayer graphene sample for the n?=?2 the n?=?3 states. Despite the large band gap of graphene at the center of the Brillouin zone, the lifetime results demonstrate that the graphene layers do not behave as a simple tunneling barrier, suggesting that the buffer layer and graphene overlayers play a direct role in the decay of IPS electrons.

  18. Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

    SciTech Connect (OSTI)

    Hultqvist, Adam; Bent, Stacey F.; Li, Jian V.; Kuciauskas, Darius; Dippo, Patricia; Contreras, Miguel A.; Levi, Dean H.

    2015-07-20

    Partial CuInGaSe{sub 2} (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO{sub x} buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.

  19. Preparation of CIGS-based solar cells using a buffered electrodeposition bath

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath

    2007-11-20

    A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

  20. Sol-gel deposition of buffer layers on biaxially textured metal substances

    DOE Patents [OSTI]

    Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  1. Growth and micro structural studies on Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) buffer layers

    SciTech Connect (OSTI)

    Srinivas, S.; Bhatnagar, A.K.; Pinto, R.

    1994-12-31

    Microstructure of Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) of radio frequency magnetron sputtered buffer layers was studied at various sputtering conditions on Si<100>, Sapphire and LaAlO{sub 3} <100> substrates. The effect of substrate temperatures upto 800 C and sputtering gas pressures in the range of 50 mTorr. of growth conditions was studied. The buffer layers of YSZ and STO showed a strong tendency for columnar structure with variation growth conditions. The buffer layers of YSZ and STO showed orientation. The tendency for columnar growth was observed above 15 mTorr sputtering gas pressure and at high substrate temperatures. Post annealing of these films in oxygen atmosphere reduced the oxygen deficiency and strain generated during growth of the films. Strong c-axis oriented superconducting YBa{sub 2}Cu{sub 9}O{sub 7-x} (YBCO) thin films were obtained on these buffer layers using pulsed laser ablation technique. YBCO films deposited on multilayers of YSZ and STO were shown to have better superconducting properties.

  2. Movement and Injury Rates for Three Life Stages of Spring Chinook Salmon Oncorhynchus Tshawytscha : A Comparison of Submerged Orifices and an Overflow Weir for Fish Bypass in a Modular Rotary Drum Fish Screen : Annual Report 1995.

    SciTech Connect (OSTI)

    Abernethy, C. Scott; Neitzel, Duane A.; Mavros, William V.

    1996-03-01

    The Pacific Northwest National Laboratory (PNNL) evaluated the effectiveness of 6-in. and 2-in. submerged orifices, and an overflow weir for fish bypass at a rotary drum fish screening facility. A modular drum screen built by the Washington Department of Fish and Wildlife (WDFW) was installed at PNNL`s Aquatic Ecology research laboratory in Richland, Washington. Fry, subyearlings, and smolts of spring chinook salmon (Oncorhynchus tshawyacha) were introduced into the test system, and their movement and injury rates were monitored. A total of 33 tests (100 fish per test) that lasted from 24 to 48 hr were completed from 1994 through 1995. Passage rate depended on both fish size and bypass configuration. For fry/fingerling spring chinook salmon, there was no difference in passage rate through the three bypass configurations (2-in. orifice, 6-in. orifice, or overflow weir). Subyearlings moved sooner when the 6-in. orifice was used, with more than 50% exiting through the fish bypass in the first 8 hr. Smolts exited quickly and preferred the 6-in. orifice, with over 90% of the smolts exiting through the bypass in less than 2 hr. Passage was slightly slower when a weir was used, with 90% of the smolts exiting in about 4 hr. When the 2-in. orifice was used in the bypass, 90% of the smolts did not exit until after 8 hr. In addition, about 7% of the smolts failed to migrate from the forebay within 24 hr, indicating that smolts were significantly delayed when the 2-in. orifice was used. Few significant injuries were detected for any of the life stages. However, light descaling occurred on about 15% of chinook salmon smolts passing through the 2-in. orifice. Although a single passage through the orifice did not appear to cause significant scale loss or other damage, passing through several screening facilities with 2-in. orifices could cause cumulative injuries.

  3. Evaluating resilience of DNP3-controlled SCADA systems against event buffer flooding

    SciTech Connect (OSTI)

    Yan, Guanhua; Nicol, David M; Jin, Dong

    2010-12-16

    The DNP3 protocol is widely used in SCADA systems (particularly electrical power) as a means of communicating observed sensor state information back to a control center. Typical architectures using DNP3 have a two level hierarchy, where a specialized data aggregator device receives observed state from devices within a local region, and the control center collects the aggregated state from the data aggregator. The DNP3 communication between control center and data aggregator is asynchronous with the DNP3 communication between data aggregator and relays; this leads to the possibility of completely filling a data aggregator's buffer of pending events, when a relay is compromised or spoofed and sends overly many (false) events to the data aggregator. This paper investigates how a real-world SCADA device responds to event buffer flooding. A Discrete-Time Markov Chain (DTMC) model is developed for understanding this. The DTMC model is validated by a Moebius simulation model and data collected on real SCADA testbed.

  4. Selective growth of Pb islands on graphene/SiC buffer layers

    SciTech Connect (OSTI)

    Liu, X. T.; Miao, Y. P.; Ma, D. Y.; Hu, T. W.; Ma, F. E-mail: kwxu@mail.xjtu.edu.cn; Chu, Paul K.; Xu, K. W. E-mail: kwxu@mail.xjtu.edu.cn

    2015-02-14

    Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 6?(3) reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Since Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.

  5. Minimally buffered data transfers between nodes in a data communications network

    DOE Patents [OSTI]

    Miller, Douglas R.

    2015-06-23

    Methods, apparatus, and products for minimally buffered data transfers between nodes in a data communications network are disclosed that include: receiving, by a messaging module on an origin node, a storage identifier, a origin data type, and a target data type, the storage identifier specifying application storage containing data, the origin data type describing a data subset contained in the origin application storage, the target data type describing an arrangement of the data subset in application storage on a target node; creating, by the messaging module, origin metadata describing the origin data type; selecting, by the messaging module from the origin application storage in dependence upon the origin metadata and the storage identifier, the data subset; and transmitting, by the messaging module to the target node, the selected data subset for storing in the target application storage in dependence upon the target data type without temporarily buffering the data subset.

  6. Scaling nitrogen and carbon interactions: What are the consequences of biological buffering?

    SciTech Connect (OSTI)

    Weston, David J.; Rogers, Alistair; Tschaplinski, Timothy J.; Gunter, Lee E.; Jawdy, Sara A.; Engle, Nancy L.; Heady, Lindsey E.; Tuskan, Gerald A.; Wullschleger, Stan D.

    2015-06-25

    Understanding the consequences of elevated CO2 (eCO2; 800 ppm) on terrestrial ecosystems is a central theme in global change biology, but relatively little is known about how altered plant C and N metabolism influences higher levels of biological organization. Here, we investigate the consequences of C and N interactions by genetically modifying the N-assimilation pathway in Arabidopsis and initiating growth chamber and mesocosm competition studies at current CO2 (cCO2; 400 ppm) and eCO2 over multiple generations. Using a suite of ecological, physiological, and molecular genomic tools, we show that a single-gene mutant of a key enzyme (nia2) elicited a highly orchestrated buffering response starting with a fivefold increase in the expression of a gene paralog (nia1) and a 63% increase in the expression of gene network module enriched for N-assimilation genes. The genetic perturbation reduced amino acids, protein, and TCA-cycle intermediate concentrations in the nia2 mutant compared to the wild-type, while eCO2 mainly increased carbohydrate concentrations. The mutant had reduced net photosynthetic rates due to a 27% decrease in carboxylation capacity and an 18% decrease in electron transport rates. The expression of these buffering mechanisms resulted in a penalty that negatively correlated with fitness and population dynamics yet showed only minor alterations in our estimates of population function, including total per unit area biomass, ground cover, and leaf area index. As a result, this study provides insight into the consequences of buffering mechanisms that occur post-genetic perturbations in the N pathway and the associated outcomes these buffering systems have on plant populations relative to eCO2.

  7. Scaling carbon and nitrogen interactions. What are the consequences of biological buffering?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Weston, David; Rogers, Alistair; Tschaplinski, Timothy J.; Gunter, Lee E; Jawdy, Sara; Engle, Nancy L.; Heady, Lindsey E.; Tuskan, Gerald A.; Wullschleger, Stan D.

    2015-06-25

    Understanding the consequences of elevated CO2 (eCO2; 800 ppm) on terrestrial ecosystems is a central theme in global change biology, but relatively little is known about how altered plant C and N metabolism influences higher levels of biological organization. Here, we investigate the consequences of C and N interactions by genetically modifying the N-assimilation pathway in Arabidopsis and initiating growth chamber and mesocosm competition studies at current CO2 (cCO2; 400 ppm) and eCO2 over multiple generations. Using a suite of ecological, physiological, and molecular genomic tools, we show that a single-gene mutant of a key enzyme (nia2) elicited a highlymore » orchestrated buffering response starting with a fivefold increase in the expression of a gene paralog (nia1) and a 63% increase in the expression of gene network module enriched for N-assimilation genes. The genetic perturbation reduced amino acids, protein, and TCA-cycle intermediate concentrations in the nia2 mutant compared to the wild-type, while eCO2 mainly increased carbohydrate concentrations. The mutant had reduced net photosynthetic rates due to a 27% decrease in carboxylation capacity and an 18% decrease in electron transport rates. The expression of these buffering mechanisms resulted in a penalty that negatively correlated with fitness and population dynamics yet showed only minor alterations in our estimates of population function, including total per unit area biomass, ground cover, and leaf area index. This study provides insight into the consequences of buffering mechanisms that occur post-genetic perturbations in the N pathway and the associated outcomes these buffering systems have on plant populations relative to eCO2.« less

  8. Hafnium nitride buffer layers for growth of GaN on silicon

    DOE Patents [OSTI]

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  9. Photovoltaic devices comprising zinc stannate buffer layer and method for making

    DOE Patents [OSTI]

    Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J.

    2001-01-01

    A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

  10. Scaling carbon and nitrogen interactions. What are the consequences of biological buffering?

    SciTech Connect (OSTI)

    Weston, David; Rogers, Alistair; Tschaplinski, Timothy J.; Gunter, Lee E; Jawdy, Sara; Engle, Nancy L.; Heady, Lindsey E.; Tuskan, Gerald A.; Wullschleger, Stan D.

    2015-06-25

    Understanding the consequences of elevated CO2 (eCO2; 800 ppm) on terrestrial ecosystems is a central theme in global change biology, but relatively little is known about how altered plant C and N metabolism influences higher levels of biological organization. Here, we investigate the consequences of C and N interactions by genetically modifying the N-assimilation pathway in Arabidopsis and initiating growth chamber and mesocosm competition studies at current CO2 (cCO2; 400 ppm) and eCO2 over multiple generations. Using a suite of ecological, physiological, and molecular genomic tools, we show that a single-gene mutant of a key enzyme (nia2) elicited a highly orchestrated buffering response starting with a fivefold increase in the expression of a gene paralog (nia1) and a 63% increase in the expression of gene network module enriched for N-assimilation genes. The genetic perturbation reduced amino acids, protein, and TCA-cycle intermediate concentrations in the nia2 mutant compared to the wild-type, while eCO2 mainly increased carbohydrate concentrations. The mutant had reduced net photosynthetic rates due to a 27% decrease in carboxylation capacity and an 18% decrease in electron transport rates. The expression of these buffering mechanisms resulted in a penalty that negatively correlated with fitness and population dynamics yet showed only minor alterations in our estimates of population function, including total per unit area biomass, ground cover, and leaf area index. This study provides insight into the consequences of buffering mechanisms that occur post-genetic perturbations in the N pathway and the associated outcomes these buffering systems have on plant populations relative to eCO2.

  11. ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.

    2009-11-03

    The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

  12. Scaling nitrogen and carbon interactions: What are the consequences of biological buffering?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Weston, David J.; Rogers, Alistair; Tschaplinski, Timothy J.; Gunter, Lee E.; Jawdy, Sara A.; Engle, Nancy L.; Heady, Lindsey E.; Tuskan, Gerald A.; Wullschleger, Stan D.

    2015-06-25

    Understanding the consequences of elevated CO2 (eCO2; 800 ppm) on terrestrial ecosystems is a central theme in global change biology, but relatively little is known about how altered plant C and N metabolism influences higher levels of biological organization. Here, we investigate the consequences of C and N interactions by genetically modifying the N-assimilation pathway in Arabidopsis and initiating growth chamber and mesocosm competition studies at current CO2 (cCO2; 400 ppm) and eCO2 over multiple generations. Using a suite of ecological, physiological, and molecular genomic tools, we show that a single-gene mutant of a key enzyme (nia2) elicited a highlymore » orchestrated buffering response starting with a fivefold increase in the expression of a gene paralog (nia1) and a 63% increase in the expression of gene network module enriched for N-assimilation genes. The genetic perturbation reduced amino acids, protein, and TCA-cycle intermediate concentrations in the nia2 mutant compared to the wild-type, while eCO2 mainly increased carbohydrate concentrations. The mutant had reduced net photosynthetic rates due to a 27% decrease in carboxylation capacity and an 18% decrease in electron transport rates. The expression of these buffering mechanisms resulted in a penalty that negatively correlated with fitness and population dynamics yet showed only minor alterations in our estimates of population function, including total per unit area biomass, ground cover, and leaf area index. As a result, this study provides insight into the consequences of buffering mechanisms that occur post-genetic perturbations in the N pathway and the associated outcomes these buffering systems have on plant populations relative to eCO2.« less

  13. Evaluation of the Effective Moisture Penetration Depth Model for Estimating Moisture Buffering in Buildings

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Evaluation of the Effective Moisture Penetration Depth Model for Estimating Moisture Buffering in Buildings J. Woods, J. Winkler, and D. Christensen National Renewable Energy Laboratory Technical Report NREL/TP-5500-57441 January 2013 NREL is a national laboratory of the U.S. Department of Energy, Office of Energy Efficiency & Renewable Energy, operated by the Alliance for Sustainable Energy, LLC. National Renewable Energy Laboratory 15013 Denver West Parkway Golden, Colorado 80401

  14. Carbonic anhydrase-facilitated CO2 absorption with polyacrylamide buffering bead capture

    SciTech Connect (OSTI)

    Dilmore, Robert; Griffith, Craid; Liu, Zhu; Soong, Yee; Hedges, Sheila W.; Koepsel, Richard; Ataai, M [Ataai, Mohammad

    2009-07-01

    A novel CO2 separation concept is described wherein the enzyme carbonic anhydrase (CA) is used to increase the overall rate Of CO2 absorption after which hydrated CO2 reacts with regenerable amine-bearing polyacrylamide buffering beads (PABB). Following saturation of the material's immobilized tertiary amines, CA-bearing carrier water is separated and recycled to the absorption stage while CO2-loaded material is thermally regenerated. Process application of this concept would involve operation of two or more columns in parallel with thermal regeneration with low-pressure steam taking place after the capacity of a column of amine-bearing polymeric material was exceeded. PABB CO2- bearing capacity was evaluated by thermogravimetric analysis (TGA) for beads of three acrylamido buffering monomer ingredient concentrations: 0 mol/kg bead, 0.857 mol/kg bead, and 2 mol/kg bead. TGA results demonstrate that CO2- bearing capacity increases with increasing PABB buffering concentration and that up to 78% of the theoretical CO2- bearing capacity was realized in prepared PABB samples (0.857 mol/kg recipe). The highest observed CO2-bearing capacity of PABB was 1.37 mol of CO2 per kg dry bead. TGA was also used to assess the regenerability Of CO2-loaded PABB. Preliminary results suggest that CO2 is partially driven from PABB samples at temperatures as low as 55 degrees C, with complete regeneration occurring at 100 degrees C. Other physical characteristics of PABB are discussed. In addition, the effectiveness of bovine carbonic anhydrase for the catalysis Of CO2 dissolution is evaluated. Potential benefits and drawbacks of the proposed process are discussed. Published by Elsevier Ltd.

  15. Using Whole-House Field Tests to Empirically Derive Moisture Buffering Model Inputs

    SciTech Connect (OSTI)

    Woods, J.; Winkler, J.; Christensen, D.; Hancock, E.

    2014-08-01

    Building energy simulations can be used to predict a building's interior conditions, along with the energy use associated with keeping these conditions comfortable. These models simulate the loads on the building (e.g., internal gains, envelope heat transfer), determine the operation of the space conditioning equipment, and then calculate the building's temperature and humidity throughout the year. The indoor temperature and humidity are affected not only by the loads and the space conditioning equipment, but also by the capacitance of the building materials, which buffer changes in temperature and humidity. This research developed an empirical method to extract whole-house model inputs for use with a more accurate moisture capacitance model (the effective moisture penetration depth model). The experimental approach was to subject the materials in the house to a square-wave relative humidity profile, measure all of the moisture transfer terms (e.g., infiltration, air conditioner condensate) and calculate the only unmeasured term: the moisture absorption into the materials. After validating the method with laboratory measurements, we performed the tests in a field house. A least-squares fit of an analytical solution to the measured moisture absorption curves was used to determine the three independent model parameters representing the moisture buffering potential of this house and its furnishings. Follow on tests with realistic latent and sensible loads showed good agreement with the derived parameters, especially compared to the commonly-used effective capacitance approach. These results show that the EMPD model, once the inputs are known, is an accurate moisture buffering model.

  16. Hydrogen responses of ultrathin Pd films and nanowire networks with a Ti buffer layer.

    SciTech Connect (OSTI)

    Zeng, X. Q.; Wang, Y. L.; Xiao, Z. L.; Latimer, M. L.; Xu, T.; Kwok, W. K.

    2012-01-01

    We report on hydrogen responses of ultrathin films and nanowire networks of palladium on titanium buffered silicon substrates and filtration membranes, respectively. We found that in both systems signatures such as retarding responses and saturation of the resistance changes at high hydrogen concentrations associated with the transition from Pd/H solid solution to Pd hydride diminish with decreasing the thickness of the palladium layer from 7 to 2 nm. Our results not only reveal a new way to suppress the phase transition in Pd/H system but also provide an alternative approach to achieve fast and sensitive hydrogen sensors with a wide concentration detection range.

  17. High speed, very large (8 megabyte) first in/first out buffer memory (FIFO)

    DOE Patents [OSTI]

    Baumbaugh, Alan E.; Knickerbocker, Kelly L.

    1989-01-01

    A fast FIFO (First In First Out) memory buffer capable of storing data at rates of 100 megabytes per second. The invention includes a data packer which concatenates small bit data words into large bit data words, a memory array having individual data storage addresses adapted to store the large bit data words, a data unpacker into which large bit data words from the array can be read and reconstructed into small bit data words, and a controller to control and keep track of the individual data storage addresses in the memory array into which data from the packer is being written and data to the unpacker is being read.

  18. Buffer layers on metal surfaces having biaxial texture as superconductor substrates

    DOE Patents [OSTI]

    Paranthaman, Mariappan (Knoxville, TN); Lee, Dominic F. (Knoxville, TN); Kroeger, Donald M. (Knoxville, TN); Goyal, Amit (Knoxville, TN)

    2000-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /Ni, (RE=Rare Earth), RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /CeO.sub.2 /Ni, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /CeO.sub.2 /Cu, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approaches, which include chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

  19. Calcium manganate: A promising candidate as buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems

    SciTech Connect (OSTI)

    Zhao, Pengjun; Wang, Hongguang; Kong, Wenwen; Xu, Jinbao Wang, Lei; Ren, Wei; Bian, Liang; Chang, Aimin

    2014-11-21

    We have systematically studied the feasibility of CaMnO{sub 3} thin film, an n-type perovskite, to be utilized as the buffer layer for hybrid halide perovskite photovoltaic-thermoelectric device. Locations of the conduction band and the valence band, spontaneous polarization performance, and optical properties were investigated. Results indicate the energy band of CaMnO{sub 3} can match up well with that of CH{sub 3}NH{sub 3}PbI{sub 3} on separating electron-hole pairs. In addition, the consistent polarization angle helps enlarge the open circuit voltage of the composite system. Besides, CaMnO{sub 3} film shows large absorption coefficient and low extinction coefficient under visible irradiation, demonstrating high carrier concentration, which is beneficial to the current density. More importantly, benign thermoelectric properties enable CaMnO{sub 3} film to assimilate phonon vibration from CH{sub 3}NH3PbI{sub 3}. All the above features lead to a bright future of CaMnO{sub 3} film, which can be a promising candidate as a buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems.

  20. Field measurement of moisture-buffering model inputs for residential buildings

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Woods, Jason; Winkler, Jon

    2016-02-05

    Moisture adsorption and desorption in building materials impact indoor humidity. This effect should be included in building-energy simulations, particularly when humidity is being investigated or controlled. Several models can calculate this moisture-buffering effect, but accurate ones require model inputs that are not always known to the user of the building-energy simulation. This research developed an empirical method to extract whole-house model inputs for the effective moisture penetration depth (EMPD) model. The experimental approach was to subject the materials in the house to a square-wave relative-humidity profile, measure all of the moisture-transfer terms (e.g., infiltration, air-conditioner condensate), and calculate the onlymore » unmeasured term—the moisture sorption into the materials. We validated this method with laboratory measurements, which we used to measure the EMPD model inputs of two houses. After deriving these inputs, we measured the humidity of the same houses during tests with realistic latent and sensible loads and demonstrated the accuracy of this approach. Furthermore, these results show that the EMPD model, when given reasonable inputs, is an accurate moisture-buffering model.« less

  1. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  2. U-259: RSA BSAFE SSL-C Lets Remote Users Decrypt SSL/TLS Traffic and SSL

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Buffer Overflow Lets Remote Users Execute Arbitrary Code | Department of Energy 59: RSA BSAFE SSL-C Lets Remote Users Decrypt SSL/TLS Traffic and SSL Buffer Overflow Lets Remote Users Execute Arbitrary Code U-259: RSA BSAFE SSL-C Lets Remote Users Decrypt SSL/TLS Traffic and SSL Buffer Overflow Lets Remote Users Execute Arbitrary Code September 13, 2012 - 6:00am Addthis PROBLEM: RSA BSAFE SSL-C Lets Remote Users Decrypt SSL/TLS Traffic and SSL Buffer Overflow Lets Remote Users Execute

  3. Photoelectrochemical study of pitting on iron in borate buffer solution containing inhibitor

    SciTech Connect (OSTI)

    Yang, M.; Chen, L.; Cai, S.

    1997-01-01

    The photoelectrochemical behavior and the susceptibility of iron to pitting in borate buffer containing chloride ions (Cl{sup {minus}}) were investigated in the presence and absence of inhibitor PC-604, which is a mixture of polyhydric alcohol phosphoric easter and polyphosphoric ester of various molecular weights. Measurements of the band gap (E{sub g}) of the passive film on iron showed inhibitor concentration and passivation time did not interfere with E{sub g}. Photocurrent and photocurrent transients increased with increasing inhibitor quantities and passivation times at constant potential. The decay time-constant of the photocurrent transient was investigated as a specific parameter of the film. Data showed this parameter was related to pitting susceptibility of the passive film on iron.

  4. ZnO buffer layer for metal films on silicon substrates

    DOE Patents [OSTI]

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  5. Executing scatter operation to parallel computer nodes by repeatedly broadcasting content of send buffer partition corresponding to each node upon bitwise OR operation

    DOE Patents [OSTI]

    Archer, Charles J.; Ratterman, Joseph D.

    2009-11-06

    Executing a scatter operation on a parallel computer includes: configuring a send buffer on a logical root, the send buffer having positions, each position corresponding to a ranked node in an operational group of compute nodes and for storing contents scattered to that ranked node; and repeatedly for each position in the send buffer: broadcasting, by the logical root to each of the other compute nodes on a global combining network, the contents of the current position of the send buffer using a bitwise OR operation, determining, by each compute node, whether the current position in the send buffer corresponds with the rank of that compute node, if the current position corresponds with the rank, receiving the contents and storing the contents in a reception buffer of that compute node, and if the current position does not correspond with the rank, discarding the contents.

  6. Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films

    SciTech Connect (OSTI)

    Hankins, Matthew G.

    2009-10-06

    Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

  7. Evaluation of methods for application of epitaxial buffer and superconductor layers

    SciTech Connect (OSTI)

    1999-03-30

    The recent achievements of critical currents exceeding million amperes per square centimeter at 77K in YBCO deposited over suitably textured substrate have stimulated interest in the potential applications of coated conductors at high temperatures and in high magnetic fields. Currently, ion-beam assisted deposition (IBAD), and rolling assisted bi-axially textured substrate (RABiTS), represent two available options for obtaining textured substrates. For applying suitable coatings of buffer and high temperature superconductor (HTS) material over textured substrates, several options are available which include sputtering, electron-beam evaporation, laser ablation, electrophoresis, chemical vapor deposition (including metal organics chemical vapor deposition), sol-gel, metal organics decomposition, electrodeposition and aerosol/spray pyrolysis. A commercial continuous long-length wire/tape manufacturing scheme developed out of any suitable combination of the above techniques would consist of operations involving preparation of the substrate and application of buffer, HTS and passivation/insulation materials and special treatment steps such as post-annealing. These operations can be effected by various process parameters that can be classified into chemistry, materials, engineering and environmental related parameters. Under the DOE-sponsored program, to carry out an engineering evaluation, first, the process flow schemes were developed for various candidate options identifying the major operating steps, process conditions, and process streams. Next, to evaluate quantifiable parameters such as process severity (e.g. temperature and pressure), coating thickness and deposition rate for HTS material, achieved maximum J{sub c} value (for films >1{micro}m thick) and cost of chemical and material utilization efficiency, the multi-attribute method was used to determine attributes/merits for various parameters and candidate options. To determine similar attribute values for the

  8. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    SciTech Connect (OSTI)

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U.; Bergsten, J.; Rorsman, N.

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  9. Determination of effective axion masses in the helium-3 buffer of CAST

    SciTech Connect (OSTI)

    Ruz, J

    2011-11-18

    The CERN Axion Solar Telescope (CAST) is a ground based experiment located in Geneva (Switzerland) searching for axions coming from the Sun. Axions, hypothetical particles that not only could solve the strong CP problem but also be one of the favored candidates for dark matter, can be produced in the core of the Sun via the Primakoff effect. They can be reconverted into X-ray photons on Earth in the presence of strong electromagnetic fields. In order to look for axions, CAST points a decommissioned LHC prototype dipole magnet with different X-ray detectors installed in both ends of the magnet towards the Sun. The analysis of the data acquired during the first phase of the experiment yielded the most restrictive experimental upper limit on the axion-to-photon coupling constant for axion masses up to about 0.02 eV/c{sup 2}. During the second phase, CAST extends its mass sensitivity by tuning the electron density present in the magnetic field region. Injecting precise amounts of helium gas has enabled CAST to look for axion masses up to 1.2 eV/c{sup 2}. This paper studies the determination of the effective axion masses scanned at CAST during its second phase. The use of a helium gas buffer at temperatures of 1.8 K has required a detailed knowledge of the gas density distribution. Complete sets of computational fluid dynamic simulations validated with experimental data have been crucial to obtain accurate results.

  10. Investigations into alterntive substrate, absorber, and buffer layer processing for Cu(In,Ga)Se{sub 2}-based solar cells

    SciTech Connect (OSTI)

    Tuttle, J.R.; Berens, T.A.; Keane, J.

    1996-05-01

    High-performance Cu(In,Ga)Se{sub 2}(CIGS)-based solar cells are presently fabricated within a narrow range of processing options. In this contribution, alternative substrate, absorber, and buffer layer processing is considered. Cell performance varies considerably when alternative substrates are employed. These variations are narrowed with the addition of Na via a Na{sub 2}S compound. Sputtered and electrodeposited CIGS precursors and completed absorbers show promise as alternatives to evaporation. A recrystallization process is required to improve their quality. (In,Ga){sub y}Se buffer layers contribute to cell performance above 10. Further improvements in these alternatives will lead to combined cell performance greater than 10% in the near term.

  11. {sup 137}Cs sorption into bentonite from Cidadap-Tasikmalaya as buffer material for disposal demonstration plant facility at Serpong

    SciTech Connect (OSTI)

    Setiawan, B. Sriwahyuni, H. Ekaningrum, NE. Sumantry, T.

    2014-03-24

    According to co-location principle, near surface disposal type the disposal demonstration plant facility will be build at Serpong nuclear area. The facility also for anticipation of future needs to provide national facility for the servicing of radwaste management of non-nuclear power plant activity in Serpong Nuclear Area. It is needs to study the material of buffer and backfill for the safety of demonstration plant facility. A local bentonite rock from Cidadap-Tasikmalaya was used as the buffer materials. Objective of experiment is to find out the specific data of sorption characteristic of Cidadap bentonite as buffer material in a radwaste disposal system. Experiments were performed in batch method, where bentonite samples were contacted with CsCl solution labeled with Cs-137 in 100 ml/g liquid:solid ratio. Initial Cs concentration was 10{sup −8} M and to study the effects of ionic strength and Cs concentration in solution, 0.1 and 1.0 M NaCl also CsCl concentration ranging 10{sup −8} - 10{sup −4} M were added in solution. As the indicator of Cs saturated in bentonite samples, Kd value was applied. Affected parameters in the experiment were contact time, effects of ionic strength and concentration of CsCl. Results showed that sorption of Cs by bentonite reached constantly after 16 days contacted, and Kd value was 10.600 ml/g. Effect of CsCl concentration on Kd value may decreased in increased in CsCl concentration. Effect of ionic strength increased according to increased in concentration of background and would effect to Kd value due to competition of Na ions and Cs in solution interacts with bentonite. By obtaining the bentonite character data as buffer material, the results could be used as the basis for making of design and the basic of performance assessment the near surface disposal facility in terms of isolation capacity of radwaste later.

  12. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect (OSTI)

    Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1; Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 ; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.; Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7; Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7

    2013-09-21

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  13. Growth modes of InN(000-1) on GaN buffer layers on sapphire

    SciTech Connect (OSTI)

    Liu, Bing; Kitajima, Takeshi; Chen, Dongxue; Leone, Stephen R.

    2005-01-24

    In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesa-like with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered.

  14. Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

    SciTech Connect (OSTI)

    Nandi, R. Mohan, S. Major, S. S.; Srinivasa, R. S.

    2014-04-24

    ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

  15. Production of cold beams of ND{sub 3} with variable rotational state distributions by electrostatic extraction of He and Ne buffer-gas-cooled beams

    SciTech Connect (OSTI)

    Twyman, Kathryn S.; Bell, Martin T.; Heazlewood, Brianna R.; Softley, Timothy P.

    2014-07-14

    The measurement of the rotational state distribution of a velocity-selected, buffer-gas-cooled beam of ND{sub 3} is described. In an apparatus recently constructed to study cold ion-molecule collisions, the ND{sub 3} beam is extracted from a cryogenically cooled buffer-gas cell using a 2.15 m long electrostatic quadrupole guide with three 90 bends. (2+1) resonance enhanced multiphoton ionization spectra of molecules exiting the guide show that beams of ND{sub 3} can be produced with rotational state populations corresponding to approximately T{sub rot} = 918 K, achieved through manipulation of the temperature of the buffer-gas cell (operated at 6 K or 17 K), the identity of the buffer gas (He or Ne), or the relative densities of the buffer gas and ND{sub 3}. The translational temperature of the guided ND{sub 3} is found to be similar in a 6 K helium and 17 K neon buffer-gas cell (peak kinetic energies of 6.92(0.13) K and 5.90(0.01) K, respectively). The characterization of this cold-molecule source provides an opportunity for the first experimental investigations into the rotational dependence of reaction cross sections in low temperature collisions.

  16. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  17. Parallel log structured file system collective buffering to achieve a compact representation of scientific and/or dimensional data

    DOE Patents [OSTI]

    Grider, Gary A.; Poole, Stephen W.

    2015-09-01

    Collective buffering and data pattern solutions are provided for storage, retrieval, and/or analysis of data in a collective parallel processing environment. For example, a method can be provided for data storage in a collective parallel processing environment. The method comprises receiving data to be written for a plurality of collective processes within a collective parallel processing environment, extracting a data pattern for the data to be written for the plurality of collective processes, generating a representation describing the data pattern, and saving the data and the representation.

  18. Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Man, Michael K. L.; Deckoff-Jones, Skylar; Winchester, Andrew; Shi, Guangsha; Gupta, Gautam; Mohite, Aditya D.; Kar, Swastik; Kioupakis, Emmanouil; Talapatra, Saikat; Dani, Keshav M.

    2016-02-12

    Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key properties when placed on a substrate like silicon, including quenching of photoluminescence, distorted crystalline structure, and rough surface morphology. The ability to protect these properties of monolayer TMDs, such as molybdenum disulfide (MoS2), on standard Si-based substrates, will enable their use in opto-electronic devices and scientific investigations. Here we show that an atomically thin buffer layer of hexagonal-boron nitride (hBN) protects the rangemore » of key opto-electronic, structural, and morphological properties of monolayer MoS2 on Si-based substrates. The hBN buffer restores sharp diffraction patterns, improves monolayer flatness by nearly two-orders of magnitude, and causes over an order of magnitude enhancement in photoluminescence, compared to bare Si and SiO2 substrates. Lastly, our demonstration provides a way of integrating MoS2 and other 2D monolayers onto standard Si-substrates, thus furthering their technological applications and scientific investigations.« less

  19. EXAMINATION OF DISLOCATIONS IN LATTICE-MISMATCHED GaInAs/BUFFER LAYER/GaAs FOR III-V PHOTOVOLTAICS

    SciTech Connect (OSTI)

    Levander, A.; Geisz, J.

    2007-01-01

    Dislocations act as sites for nonradiative electron/hole pair recombination, which reduces the effi ciency of photovoltaics. Lattice-matched materials can be grown on top of one another without forming a high density of dislocations. However, when the growth of lattice-mismatched (LMM) materials is attempted, many dislocations result from the relaxation of strain in the crystal structure. In an attempt to reduce the number of dislocations that propagate into a solar device when using LMM materials, a compositionally step-graded buffer is placed between the two LMM materials. In order to confi ne the dislocations to the buffer layer and therefore increase material quality and device effi ciency, the growth temperature and thickness of the buffer layer were varied. A GaInP compositionally graded buffer and GaInAs p-n junction were grown on a GaAs substrate in a metal-organic chemical vapor deposition (MOCVD) system. A multibeam optical stress sensor (MOSS) and X-ray diffraction (XRD) were used to characterize the strain in the epilayers. Electrical and optoelectronic properties were measured using a probe station and multimeter setup, solar simulator, and a quantum effi ciency instrument. It was determined that device functionality was highly dependent on the growth temperature of the graded buffer. As growth temperature increased, so did the dislocation density in the device despite an increase in the dislocation velocity, which should have increased the dislocation annihilation rate and the diffusion of dislocations to the edge of the crystal. The thickness of the graded buffer also affected device effi ciency with thinner samples performing poorly. The thinner graded buffer layers had high internal resistances from reduced carrier concentrations. In terms of effi ciency, the empirically derived recipe developed by the scientists at the National Renewable Energy Laboratory (NREL) produced the highest quality cells.

  20. Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency

    SciTech Connect (OSTI)

    Cerio, Frank

    2013-09-14

    The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm{sup 2} using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance

  1. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas; Kawakami, Roland K.

    2016-04-27

    Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  2. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  3. Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer

    SciTech Connect (OSTI)

    Son, Seokki; Choi, Moonseok; Kim, Dohyung; Choi, Changhwan; Yu, Sunmoon

    2015-01-12

    We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al{sub 2}O{sub 3} onto exfoliated molybdenum disulfide (MoS{sub 2}) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS{sub 2} by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al{sub 2}O{sub 3}. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al{sub 2}O{sub 3}/MoS{sub 2} interface, but also leaves MoS{sub 2} intact.

  4. Effect of dopent on the structural and optical properties of ZnS thin film as a buffer layer in solar cell application

    SciTech Connect (OSTI)

    Vashistha, Indu B. Sharma, S. K.; Sharma, Mahesh C.; Sharma, Ramphal

    2015-08-28

    In order to find the suitable alternative of toxic CdS buffer layer, deposition of pure ZnS and doped with Al by chemical bath deposition method have been reported. Further as grown pure and doped thin films have been annealed at 150°C. The structural and surface morphological properties have been characterized by X-Ray diffraction (XRD) and Atomic Force Microscope (AFM).The XRD analysis shows that annealed thin film has been polycrystalline in nature with sphalerite cubic crystal structure and AFM images indicate increment in grain size as well as growth of crystals after annealing. Optical measurement data give band gap of 3.5 eV which is ideal band gap for buffer layer for solar cell suggesting that the obtained ZnS buffer layer is suitable in a low-cost solar cell.

  5. Laser imprint reduction for the critical-density foam buffered target driven by a relatively strong foot pulse at early stage of laser implosions

    SciTech Connect (OSTI)

    Li, J. W. He, X. T.; Kang, W.; Li, J. H.; Zheng, W. D.

    2015-12-15

    In order to reduce the effect of laser imprint in direct-drive ignition scheme a low-density foam buffered target has been proposed. This target is driven by a laser pulse with a low-intensity foot at the early stage of implosion, which heats the foam and elongates the thermal conduction zone between the laser absorption region and ablation front, increasing the thermal smoothing effect. In this paper, a relatively strong foot pulse is adopted to irradiate the critical-density foam buffered target. The stronger foot, near 1 × 10{sup 14 }W/cm{sup 2}, is able to drive a radiative shock in the low-density foam, which helps smooth the shock and further reduce the effect of laser imprint. The radiative shock also forms a double ablation front structure between the two ablation fronts to further stabilize the hydrodynamics, achieving the similar results to a target with a high-Z dopant in the ablator. 2D analysis shows that for the critical-density foam buffered target irradiated by the strong foot pulse, the laser imprint can be reduced due to the radiative shock in the foam and an increased thermal smoothing effect. It seems viable for the critical-density foam buffered target to be driven by a relatively strong foot pulse with the goal of reducing the laser imprint and achieving better implosion symmetry in the direct-drive laser fusion.

  6. Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Brubaker, Matt D.; Rourke, Devin M.; Sanford, Norman A.; Bertness, Kris A.; Bright, Victor M.

    2011-09-01

    Low-temperature AlN buffer layers grown via plasma-assisted molecular beam epitaxy on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions, with their size, shape, and tilt determined by the AlN V/III flux ratio. GaN nanowires were frequently observed to adopt the structural characteristics of the underlying AlN columns, including the size and the degree of tilt. Piezoresponse force microscopy and polarity-sensitive etching indicate that the AlN films and the protruding columns have a mixed crystallographic polarity. Convergent beam electron diffraction indicates that GaN nanowires are Ga-polar, suggesting that Al-polar columns are nanowire nucleation sites for Ga-polar nanowires. GaN nanowires of low density could be grown on AlN buffers that were predominantly N-polar with isolated Al-polar columns, indicating a high growth rate for Ga-polar nanowires and suppressed growth of N-polar nanowires under typical growth conditions. AlN buffer layers grown under slightly N-rich conditions (V/III flux ratio = 1.0 to 1.3) were found to provide a favorable growth surface for low-density, coalescence-free nanowires.

  7. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    SciTech Connect (OSTI)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

    2014-09-15

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300?nm GaN/ 200?nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8??10{sup 12} to 2.1 10{sup 13} cm{sup ?2} as the AlN barrier thickness increased from 2.2 to 4.5?nm, while a 4.5?nm AlN barrier would result to 3.1??10{sup 13} cm{sup ?2} on a GaN buffer layer. The 3.0?nm AlN barrier structure exhibited the highest 2DEG mobility of 900?cm{sup 2}/Vs for a density of 1.3??10{sup 13} cm{sup ?2}. The results were also confirmed by the performance of 1??m gate-length transistors. The scaling of AlN barrier thickness from 1.5?nm to 4.5?nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63?A/mm. The maximum drain-source current was 1.1?A/mm for AlN barrier thickness of 3.0?nm and 3.7?nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0?nm AlN barrier.

  8. U-152: OpenSSL "asn1_d2i_read_bio()" DER Format Data Processing Vulnerability

    Broader source: Energy.gov [DOE]

    The vulnerability is caused due to a type casting error in the "asn1_d2i_read_bio()" function when processing DER format data and can be exploited to cause a heap-based buffer overflow.

  9. T-676: Apple iOS Certificate Chain Validation Flaw Lets Certain...

    Broader source: Energy.gov (indexed) [DOE]

    T-727:Microsoft Windows SSLTLS Protocol Flaw Lets Remote Users Decryption Sessions U-259: RSA BSAFE SSL-C Lets Remote Users Decrypt SSLTLS Traffic and SSL Buffer Overflow Lets ...

  10. U-259: RSA BSAFE SSL-C Lets Remote Users Decrypt SSL/TLS Traffic...

    Office of Environmental Management (EM)

    59: RSA BSAFE SSL-C Lets Remote Users Decrypt SSLTLS Traffic and SSL Buffer Overflow Lets Remote Users Execute Arbitrary Code U-259: RSA BSAFE SSL-C Lets Remote Users Decrypt SSL...

  11. T-568: Mozilla Firefox Bugs Let Remote Users Conduct Cross-Site...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    execute arbitrary code. 4) An error within the internal memory mapping of non-local JavaScript variables can be exploited to cause a buffer overflow and potentially execute...

  12. Enhanced photocatalytic efficiency in zirconia buffered n-NiO/p-NiO single crystalline heterostructures by nanosecond laser treatment

    SciTech Connect (OSTI)

    Molaei, R.; Bayati, M. R.; Alipour, H. M.; Nori, S.; Narayan, J.

    2013-06-21

    We report the formation of NiO based single crystalline p-n junctions with enhanced photocatalytic activity induced by pulsed laser irradiation. The NiO epilayers were grown on Si(001) substrates buffered with cubic yttria-stabilized zirconia (c-YSZ) by using pulsed laser deposition. The NiO/c-YSZ/Si heterostructures were subsequently laser treated by 5 pulses of KrF excimer laser (pulse duration = 25 Multiplication-Sign 10{sup -9} s) at lower energies. Microstructural studies, conducted by X-ray diffraction ({theta}-2{theta} and {phi} techniques) and high resolution transmission electron microscope, showed a cube-on-cube epitaxial relationship at the c-YSZ/Si interface; the epitaxial relationship across the NiO/c-YSZ interface was established as NiO<111 > Double-Vertical-Line Double-Vertical-Line c-YSZ<001> and in-plane NiO<110> Double-Vertical-Line Double-Vertical-Line c-YSZ<100>. Electron microscopy studies showed that the interface between the laser annealed and the pristine region as well as the NiO/c-YSZ interface was atomically sharp and crystallographically continuous. The formation of point defects, namely oxygen vacancies and NiO, due to the coupling of the laser photons with the NiO epilayers was confirmed by XPS. The p-type electrical characteristics of the pristine NiO epilayers turned to an n-type behavior and the electrical conductivity was increased by one order of magnitude after laser treatment. Photocatalytic activity of the pristine (p-NiO/c-YSZ/Si) and the laser-annealed (n-NiO/p-NiO/c-YSZ/Si) heterostructures were assessed by measuring the decomposition rate of 4-chlorophenol under UV light. The photocatalytic reaction rate constants were determined to be 0.0059 and 0.0092 min{sup -1} for the as-deposited and the laser-treated samples, respectively. The enhanced photocatalytic efficiency was attributed to the suppressed charge carrier recombination in the NiO based p-n junctions and higher electrical conductivity. Besides, the oxygen vacancies

  13. Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructure on Si(111)

    SciTech Connect (OSTI)

    Chowdhury, Subhra; Biswas, Dhrubes

    2015-02-23

    This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600?nm, 400?nm, and 200?nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5?nm, In{sub 0.17}Al{sub 0.83}N1.25?nm, GaN1.5?nm, In{sub 0.17}Al{sub 0.83}N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 10{sup 10?}cm{sup ?2} to 10{sup 8?}cm{sup ?2} with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure. Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89?nm, 1.2?nm, and 1.45?nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs.

  14. Temperature and pressure shift of the Cs clock transition in the presence of buffer gases: Ne, N{sub 2}, Ar

    SciTech Connect (OSTI)

    Kozlova, Olga; Guerandel, Stephane; Clercq, Emeric de

    2011-06-15

    The ground-state hyperfine resonance line of alkali-metal atoms is frequency shifted in the presence of noble or molecular gases. The buffer gases used in vapor-cell atomic clocks thus induce a temperature-dependent shift of the clock transition frequency. We report on measurements of the pressure and temperature dependence of the Cs clock transition frequency in the presence of Ne, Ar, and N{sub 2} buffer gases. The pressure in the sealed glass vapor cells is measured by means of the shift of the Cs D{sub 1} line. We have also investigated the temperature dependence of the optical shift. From these measurements, we infer the pressure and temperature coefficients of the hyperfine frequency shift. It is then possible to predetermine gas mixture ratios that cancel the temperature sensitivity at a given temperature. This prediction is confirmed experimentally for Ar-N{sub 2} mixtures. These results can be useful for improving the long-term frequency stability of Cs vapor-cell clocks.

  15. Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

    SciTech Connect (OSTI)

    Fedorenko, Y. G. Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K.

    2015-10-28

    By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.

  16. V-213: PuTTY SSH Handshake Integer Overflow Vulnerabilities ...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    source code repository Addthis Related Articles V-222: SUSE update for Filezilla V-157: Adobe Reader Acrobat Multiple Vulnerabilities V-066: Adobe AcrobatReader Multiple Flaws...

  17. U-202: Apple QuickTime Multiple Stack Overflow Vulnerabilities

    Broader source: Energy.gov [DOE]

    Visiting a maliciously crafted website may lead to an unexpected application termination or arbitrary code execution.

  18. T-588: HP Virtual SAN Appliance Stack Overflow

    Office of Energy Efficiency and Renewable Energy (EERE)

    A vulnerability has been reported in HP StorageWorks P4000 Virtual SAN Appliance Software, which can be exploited by malicious people to compromise a vulnerable system.

  19. Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

    SciTech Connect (OSTI)

    Mitchel, W. C. Haugan, H. J.; Mou, Shin; Brown, G. J.; Elhamri, S.; Berney, R.

    2015-09-15

    Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overall mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers.

  20. Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

    SciTech Connect (OSTI)

    Lupina, L.; Zoellner, M. H.; Dietrich, B.; Capellini, G.; Niermann, T.; Lehmann, M.; Thapa, S. B.; Haeberlen, M.; Storck, P.; Schroeder, T.

    2015-11-16

    We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.

  1. Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

    SciTech Connect (OSTI)

    Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha; Louis, Godfrey; Vijayakumar, K. P.; Kumar, K. Rajeev

    2015-06-24

    In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin film solar cells.

  2. Influence of the finite linewidth of the laser radiation spectrum on the shape of the coherent population trapping resonance line in an optically dense medium with a buffer gas

    SciTech Connect (OSTI)

    Barantsev, K. A. Popov, E. N.; Litvinov, A. N.

    2015-11-15

    The theory of coherent population trapping resonance is developed for the finite linewidth of the laser radiation spectrum in an optically dense medium of Λ atoms in a cell with a buffer gas. Equations are derived for the atomic density matrix and laser emission spectrum transfer in a cell with working and buffer gases at a finite temperature. The dependence of the quality factor of coherent population trapping resonance on the linewidth of the laser radiation spectrum is studied by measuring transmitted radiation and fluorescence signals.

  3. Enhanced electrical and magnetic properties in La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films deposited on CaTiO{sub 3}-buffered silicon substrates

    SciTech Connect (OSTI)

    Adamo, C.; Méchin, L.; Guillet, B.; Wu, S.; Routoure, J.-M.; Heeg, T.; Katz, M.; Pan, X. Q.; Mercone, S.; Schubert, J.; Zander, W.; Misra, R.; Schiffer, P.; and others

    2015-06-01

    We investigate the suitability of an epitaxial CaTiO{sub 3} buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La{sub 0.7}Sr{sub 0.3}MnO{sub 3} with silicon. The magnetic and electrical properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films deposited by MBE on CaTiO{sub 3}-buffered silicon (CaTiO{sub 3}/Si) are compared with those deposited on SrTiO{sub 3}-buffered silicon (SrTiO{sub 3}/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO{sub 3} buffer layer. These results are relevant to device applications of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films on silicon substrates.

  4. Power-dependent microwave properties of superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} films on buffered polycrystalline substrates

    SciTech Connect (OSTI)

    Findikoglu, A.T.; Arendt, P.N.; Foltyn, S.R.; Groves, J.R.; Jia, Q.X.; Peterson, E.J.; Bulaevskii, L.; Maley, M.P.; Reagor, D.W.

    1997-06-01

    We have studied the microwave properties of 0.4 {mu}m thick YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO) films on polycrystalline substrates with ion-beam-assisted-deposited yttria-stabilized zirconia buffer layers using a parallel-plate resonator technique at 10 GHz. The YBCO films with similar in-plane texture grown on both forsterite and Ni-based alloy substrates show similar microwave properties. We measure low-power surface resistance R{sub s} values of about 0.5 m{Omega} at 76 K and 0.15 m{Omega} at 4 K for films with an in-plane mosaic spread of about 7{degree}. Single-tone power-dependence measurements show that the surface resistance and the surface reactance increase linearly and by the same amount with increasing microwave field level. At intermediate power levels, the intermodulation measurements show odd-order intermodulation products that increase quadratically with two-tone input power. These results indicate a hysteretic vortex penetration mechanism in the weak links as the most plausible source of the observed nonlinearities in these films. {copyright} {ital 1997 American Institute of Physics.}

  5. Epitaxial c-axis oriented BaTiO{sub 3} thin films on SrTiO{sub 3}-buffered Si(001) by atomic layer deposition

    SciTech Connect (OSTI)

    Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G., E-mail: ekerdt@che.utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Posadas, Agham B.; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States); Hu, Chengqing; Yu, Edward T. [Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Bruley, John [IBM Research Division, Yorktown Heights, New York 10593 (United States)

    2014-02-24

    Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO{sub 3} (BTO) on Si(001) using a thin (1.6?nm) buffer layer of SrTiO{sub 3} (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225??C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600??C. Two-dimensional XRD confirms the tetragonal structure and orientation of 720-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 720?nm-thick BTO films are examined and show an effective dielectric constant of ?660 for the heterostructure.

  6. Structural characterisation of BaTiO{sub 3} thin films deposited on SrRuO{sub 3}/YSZ buffered silicon substrates and silicon microcantilevers

    SciTech Connect (OSTI)

    Colder, H.; Jorel, C. Mchin, L.; Domengs, B.; Marie, P.; Boisserie, M.; Guillon, S.; Nicu, L.; Galdi, A.

    2014-02-07

    We report on the progress towards an all epitaxial oxide layer technology on silicon substrates for epitaxial piezoelectric microelectromechanical systems. (101)-oriented epitaxial tetragonal BaTiO{sub 3} (BTO) thin films were deposited at two different oxygen pressures, 5.10{sup ?2} mbar and 5.10{sup ?3} mbar, on SrRuO{sub 3}/Yttria-stabilized zirconia (YSZ) buffered silicon substrates by pulsed laser deposition. The YSZ layer full (001) orientation allowed the further growth of a fully (110)-oriented conductive SrRuO{sub 3} electrode as shown by X-ray diffraction. The tetragonal structure of the BTO films, which is a prerequisite for the piezoelectric effect, was identified by Raman spectroscopy. In the BTO film deposited at 5.10{sup ?2} mbar strain was mostly localized inside the BTO grains whereas at 5.10{sup ?3} mbar, it was localized at the grain boundaries. The BTO/SRO/YSZ layers were finally deposited on Si microcantilevers at an O{sub 2} pressure of 5.10{sup ?3} mbar. The strain level was low enough to evaluate the BTO Young modulus. Transmission electron microscopy (TEM) was used to investigate the epitaxial quality of the layers and their epitaxial relationship on plain silicon wafers as well as on released microcantilevers, thanks to Focused-Ion-Beam TEM lamella preparation.

  7. In situ preparation and transport properties of YBa sub 2 Cu sub 3 O sub 7 films on sapphire with Zr(Y)O sub 2 buffer layers

    SciTech Connect (OSTI)

    Adrian, G.; Grabe, G.; Wilkens, W. ); Adrian, H.; Huth, M.; Walkenhorst, A. )

    1991-12-01

    YBa{sub 2}Cu{sub 3}O{sub 7} films on sapphire substrates prepared by laser ablation show {ital c}-axis-oriented growth and critical temperatures as high as {ital T}{sub {ital c}}({ital R}=0)=90 K. Due to diffusion processes and the formation of a nonsuperconducting intermediate layer the critical current density {ital J}{sub {ital c}} is comparatively low. To overcome these difficulties the sapphire substrates were covered by Zr(Y)O{sub 2} films acting as diffusion barriers. The preparation of these films was performed by laser ablation using a multitarget system. The structure and the surfaces of the films were characterized by x-ray diffraction and scanning electron microscopy, respectively. The transport properties of the superconductor films are similar to those on suited substrates. Critical current densities up to {ital J}{sub {ital c}} (77 K)=5{times}10{sup 5} A/cm{sup 2} were achieved. In order to gain information about the pinning mechanisms measurements of the dependencies of {ital J}{sub {ital c}} on the orientation between the crystal {ital c} axis and the external magnetic fields were carried out using samples with different buffer layer thicknesses. From the received data no indication of pinning by point defects in addition to the intrinsic planar pinning mechanism was detected.

  8. Ambient CdCl{sub 2} treatment on CdS buffer layer for improved performance of Sb{sub 2}Se{sub 3} thin film photovoltaics

    SciTech Connect (OSTI)

    Wang, Liang; Luo, Miao; Qin, Sikai; Liu, Xinsheng; Chen, Jie; Yang, Bo; Leng, Meiying; Xue, Ding-Jiang; Zhou, Ying; Gao, Liang; Song, Haisheng; Tang, Jiang

    2015-10-05

    Antimony selenide (Sb{sub 2}Se{sub 3}) is appealing as a promising light absorber because of its intrinsically benign grain boundaries, suitable band gap (∼1.1 eV), strong absorption coefficient, and relatively environmentally friendly constituents. Recently, we achieved a certified 5.6% efficiency Sb{sub 2}Se{sub 3} thin film solar cell with the assistance of ambient CdCl{sub 2} treatment on the CdS buffer layer. Here, we focused on investigating the underlying mechanism from a combined materials and device physics perspective applying current density-voltage (J-V) fitting analysis, atomic force microscope, X-ray photoelectron spectroscopy, fluorescence, and UV–Vis transmission spectroscopy. Our results indicated that ambient CdCl{sub 2} treatment on CdS film not only improved CdS grain size and quality, but also incorporated Cl and more O into the film, both of which can significantly improve the heterojunction quality and device performance of CdS/Sb{sub 2}Se{sub 3} solar cells.

  9. Burst Buffer Early User Program

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    * Chombo-Crunch + VisIt for carbon sequestration, David Trebotich, Berkeley Lab (BES) * SigmaUniFamSipros bioinformatics codes, Chongle Pan, Oak Ridge National Laboratory (BER)...

  10. Burst Buffer Early User Program

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SLAC (BESBER) NERSC-supported: Existing Engagements * ALICE data analysis, Jeff Porter, Berkeley Lab (NP) * Tractor: Cosmological data analysis (DESI), Peter Nugent,...

  11. Buffer layers for coated conductors

    DOE Patents [OSTI]

    Stan, Liliana; Jia, Quanxi; Foltyn, Stephen R.

    2011-08-23

    A composite structure is provided including a base substrate, an IBAD oriented material upon the base substrate, and a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material. Additionally, an article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and a thick film upon the cubic metal oxide material. Finally, a superconducting article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and an yttrium barium copper oxide material upon the cubic metal oxide material.

  12. Microstructural evaluation of Sb-adjusted Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer layer systems for IR applications

    SciTech Connect (OSTI)

    Chen, E.; Paine, D.C.; Uppal, P.; Ahearn, J.S.; Nichols, K.; Charache, G.W.

    1998-06-01

    The authors report on a transmission electron microscopy (TEM) study of Sb-adjusted quaternary Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBE at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBe at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} is successively increased in a series of 125 nm thick layers. Post growth analysis using conventional bright field and weak beam dark field imaging of these buffer layers in cross-section reveals that the interface misfit dislocations are primarily of the 60{degree} type and are distributed through out the interfaces of the buffer layer. When optimized, the authors have shown, using plan view and cross-sectional TEM, that this approach can reduce the threading defect density to below the detectability limit of TEM (< 10{sup 5}/cm{sup 2}) and preserve growth surface planarity. The Sb-graded approach was used to fabricate two 2.2 {micro}m power converter structures fabricated using InGaAs grown on Sb-based buffer layers on GaAs substrates. A microstructural and electrical characterization was performed on these device structures and the results are contrasted with a sample in which InP was selected as the substrate. Microstructure, defect density and device performance in these not-yet-optimized Sb-based buffer layers compares favorably to equivalent devices fabricated using InP substrates.

  13. Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

    SciTech Connect (OSTI)

    Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo; Fin, Samuele; Guidi, Vincenzo; Vincenzi, Donato

    2014-09-26

    A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers.

  14. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J.; Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menndez, J.; Aoki, Toshihiro

    2014-10-07

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including

  15. Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

    SciTech Connect (OSTI)

    Krishnaprasad, P. S. E-mail: mkj@cusat.ac.in; Jayaraj, M. K. E-mail: mkj@cusat.ac.in; Antony, Aldrin; Rojas, Fredy

    2015-03-28

    Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ?-2?, ?-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BST thin films show significantly improved tunable performance over polycrystalline thin films.

  16. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

    SciTech Connect (OSTI)

    Szyszka, A. E-mail: adam.szyszka@pwr.wroc.pl; Haeberlen, M.; Storck, P.; Thapa, S. B.; Schroeder, T.

    2014-08-28

    Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated thatwith respect to the basic GaN/oxide/Si system without DBRthe insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

  17. Perpendicularly magnetized (001)-textured D0{sub 22} MnGa films grown on an (Mg{sub 0.2}Ti{sub 0.8})O buffer with thermally oxidized Si substrates

    SciTech Connect (OSTI)

    Lee, Hwachol; Sukegawa, Hiroaki; Liu, Jun; Mitani, Seiji; Hono, Kazuhiro

    2015-10-28

    We report the growth of (001)-textured polycrystalline D0{sub 22} MnGa films with perpendicular magnetic anisotropy (PMA) on thermally oxidized Si substrates using an (Mg{sub 0.2}Ti{sub 0.8})O (MTO) buffer layer. The ordered D0{sub 22} MnGa film grown at the optimum substrate temperature of 530 °C on the MTO buffer layer shows PMA with magnetization of 80 kA/m, PMA energy density of 0.28 MJ/m{sup 3}, and coercivity of 2.3 T. The scanning transmission electron microscope analysis confirms the formation of a highly (001)-textured structure and the elementally sharp interfaces between the MTO layer and the MnGa layer. The achieved D0{sub 22} MnGa PMA films on an amorphous substrate will provide the possible pathway of integration of a Mn-based PMA film into Si-based substrates.

  18. Microwave surface resistance of YBa{sub 2}Cu{sub 3}Cu{sub 3}O{sub 7{minus}{ital x}} films on polycrystalline ceramic substrates with textured buffer layers

    SciTech Connect (OSTI)

    Findikoglu, A.T.; Foltyn, S.R.; Arendt, P.N.; Groves, J.R.; Jia, Q.X.; Peterson, E.J.; Wu, X.D.; Reagor, D.W.

    1996-09-01

    We have used a parallel-plate resonator technique to measure the microwave surface resist- ance {ital R}{sub {ital s}} of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} (YBCO) films on buffered ceramic substrates at around 10 GHz, and studied the correlation between their {ital R}{sub {ital s}} and materials properties. A 0.4-{mu}m-thick YBCO film (with an in-plane mosaic spread of 7{degree}) grown on a polycrystalline alumina substrate with an ion-beam-assisted-deposited yttria-stabilized zirconia buffer layer showed an {ital R}{sub {ital s}} of 1.89 m{Omega} at 76 K and 0.21 m{Omega} at 4 K. We have observed a strong correlation between the {ital R}{sub {ital s}} of the samples and the in-plane mosaic spread of the YBCO films. This correlation can be explained qualitatively in terms of a simple model in which the weak links between the grains of the YBCO film form an electrical network of Josephson junctions.

  19. Néel temperature of Cr{sub 2}O{sub 3} in Cr{sub 2}O{sub 3}/Co exchange-coupled system: Effect of buffer layer

    SciTech Connect (OSTI)

    Pati, Satya Prakash E-mail: phy-satya@yahoo.co.in; Shimomura, Naoki; Nozaki, Tomohiro; Sahashi, Masashi; Shibata, Tatsuo

    2015-05-07

    The lattice parameter dependence of the Néel temperature T{sub N} of thin Cr{sub 2}O{sub 3} in a Cr{sub 2}O{sub 3}/Co exchange-coupled system is investigated. Lattice-mismatch-induced strain is generated in Cr{sub 2}O{sub 3} by using different buffer layers. The lattice parameters are determined from out-of-plane and in-plane X-ray diffraction measurements. The Néel temperature is detected by direct temperature-dependent magnetization measurement as well as the temperature-dependent interface exchange coupling energy. It is observed that in-plane lattice contraction can enhance T{sub N} in Cr{sub 2}O{sub 3}, which is consistent with theoretical calculations.

  20. T-543: Wireshark 0.8.20 through 1.2.8 Multiple Vulnerabilities

    Broader source: Energy.gov [DOE]

    Wireshark is prone to multiple denial-of-service and buffer-overflow vulnerabilities. Exploiting these issues may allow attackers to crash the application and deny service to legitimate users. Attackers may also execute arbitrary code in the context of vulnerable users running the application.

  1. Yttria-stabilized zirconia buffered silicon to optimize in-plane electrical conductivity of [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] thin films

    SciTech Connect (OSTI)

    Kraus, T.; Griesser, A.; Klein, O.; Fischer, M.; Schreck, M.; Karl, H.

    2014-05-05

    The monolithic integration of thermoelectric generators and magnetoresistive functionality on the basis of misfit cobaltate [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] thin films into silicon technology is a prerequisite for their application in miniaturized electric circuits. Here, we report on [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] thin films grown by pulsed laser deposition on (001)-silicon with a thin epitaxial yttria-stabilized zirconia (YSZ) buffer layer. X-ray diffraction and cross-sectional high resolution transmission electron microscopy analysis reveal that high quality c-axis oriented heteroepitaxial [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] films with a 12-fold in-plane rotational symmetry can be grown, which exhibit remarkable lower electrical resistivity compared to those with random in-plane orientation. This result is explained by energetically preferred epitaxial growth directions of the pseudo hexagonal [CoO{sub 2}] sublayer in monoclinic [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] onto the cubic (001)-YSZ surface leading to a highly symmetric in-plane mutual orientation of the charge transporting CoO{sub 2} sublayer domains.

  2. Rapid screening buffer layers in photovoltaics

    SciTech Connect (OSTI)

    List, III, Frederick Alyious; Tuncer, Enis

    2014-09-09

    An apparatus and method of testing electrical impedance of a multiplicity of regions of a photovoltaic surface includes providing a multi-tipped impedance sensor with a multiplicity of spaced apart impedance probes separated by an insulating material, wherein each impedance probe includes a first end adapted for contact with a photovoltaic surface and a second end in operable communication with an impedance measuring device. The multi-tipped impedance sensor is used to contact the photovoltaic surface and electrical impedance of the photovoltaic material is measured between individual first ends of the probes to characterize the quality of the photovoltaic surface.

  3. U-080: Linux Kernel XFS Heap Overflow May Let Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in the Linux Kernel. A remote user can cause arbitrary code to be executed on the target user's system.

  4. Storm and combined sewer overflow: An overview of EPA's Research Program. Book chapter

    SciTech Connect (OSTI)

    Field, R.

    1993-01-01

    The report represents an overview of the EPA's Storm and Combined Sewer Pollution Control Research Program performed over a 20-year period beginning with the mid-1960s. It covers Program involvements in the development of a diverse technology including pollution-problem assessment/solution methodology and associated instrumentation and stormwater management models, best management practices, erosion control, infiltration/inflow, control, control-treatment technology and the associated sludge and solids residuals handling and many others.

  5. U-236: Microsoft JScript and VBScript Engine Integer Overflow Lets Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    Execution of arbitrary code via network A remote user can cause arbitrary code to be executed on the target

  6. Dielectric properties of <001>-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on polycrystalline metal tapes using biaxially oriented MgO/{gamma}-Al{sub 2}O{sub 3} buffer layers

    SciTech Connect (OSTI)

    Choi, W.; Kang, B.S.; Jia, Q.X.; Matias, V.; Findikoglu, A.T.

    2006-02-06

    We report the growth of <001>-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films on polycrystalline Ni-alloy tapes by pulsed laser deposition using biaxially oriented, ion-beam-assisted deposited (IBAD) MgO and {gamma}-Al{sub 2}O{sub 3} buffer layers. Dielectric constant values of our BST films were up to {approx}85% of those in the epitaxial films prepared under similar conditions on single-crystal MgO substrates. No significant dispersion of the dielectric constant was observed for frequencies from 100 Hz to 1 MHz. These results demonstrate the versatility of using IBAD-textured MgO and {gamma}-Al{sub 2}O{sub 3} buffer layers to integrate highly oriented good-quality BST films with nonsingle-crystalline substrates.

  7. Universal null DTE

    DOE Patents [OSTI]

    George, Michael; Pierson, Lyndon G.; Wilkins, Mark E.

    1989-01-01

    A communication device in the form of data terminal equipment permits two data communication equipments, each having its own master clock and operating at substantially the same nominal clock rate, to communicate with each other in a multi-segment circuit configuration of a general communication network even when phase or frequency errors exist between the two clocks. Data transmitted between communication equipments of two segments of the communication network is buffered. A variable buffer fill circuit is provided to fill the buffer to a selectable extent prior to initiation of data output clocking. Selection switches are provided to select the degree of buffer preload. A dynamic buffer fill circuit may be incorporated for automatically selecting the buffer fill level as a function of the difference in clock frequencies of the two equipments. Controllable alarm circuitry is provided for selectively generating an underflow or an overflow alarm to one or both of the communicating equipments.

  8. Universal null DTE (data terminal equipment)

    DOE Patents [OSTI]

    George, M.; Pierson, L.G.; Wilkins, M.E.

    1987-11-09

    A communication device in the form of data terminal equipment permits two data communication equipments, each having its own master clock and operating at substantially the same nominal clock rate, to communicate with each other in a multi-segment circuit configuration of a general communication network even when phase or frequency errors exist between the two clocks. Data transmitted between communication equipments of two segments of the communication network is buffered. A variable buffer fill circuit is provided to fill the buffer to a selectable extent prior to initiation of data output clocking. Selection switches are provided to select the degree of buffer preload. A dynamic buffer fill circuit may be incorporated for automatically selecting the buffer fill level as a function of the difference in clock frequencies of the two equipments. Controllable alarm circuitry is provided for selectively generating an underflow or an overflow alarm to one or both of the communicating equipments. 5 figs.

  9. Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As structures on GaAs substrates

    SciTech Connect (OSTI)

    Kulbachinskii, V. A.; Oveshnikov, L. N.; Lunin, R. A.; Yuzeeva, N. A.; Galiev, G. B.; Klimov, E. A.; Pushkarev, S. S.; Maltsev, P. P.

    2015-07-15

    The influence of construction of the buffer layer and misorientation of the substrate on the electrical properties of In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As quantum wells on a GaAs substrate is studied. The temperature dependences (in the temperature range of 4.2 K < T < 300 K) and field dependences (in magnetic fields as high as 6 T) of the sample resistances are measured. Anisotropy of the resistances in different crystallographic directions is detected; this anisotropy depends on the substrate orientation and construction of the metamorphic buffer layer. In addition, the Hall effect and the Shubnikov–de Haas effect are studied. The Shubnikov–de Haas effect is used to determine the mobilities of electrons separately in several occupied dimensionally quantized subbands in different crystallographic directions. The calculated anisotropy of mobilities is in agreement with experimental data on the anisotropy of the resistances.

  10. Buffer layer for thin film structures (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Inventors: Foltyn, Stephen R. ; Jia, Quanxi ; Arendt, Paul N. ; Wang, Haiyan Issue Date: 2010-06-15 OSTI Identifier: 1176358 Assignee: Los Alamos National Security, LLC (Los ...

  11. V-169: Linux Kernel "iscsi_add_notunderstood_response()" Buffer...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    has been reported in Linux Kernel. REFERENCE LINKS: Secunia Advisory SA53670 Red Hat Bugzilla - Bug 968036 CVE-2013-2850 IMPACT ASSESSMENT: Medium DISCUSSION: The...

  12. First burst buffer use at scale bolsters application performance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nuclear Security Administration | (NNSA) Subcritical Experiment Conducted at Nevada Test Site First Subcritical Experiment Conducted at Nevada Test Site Nevada Test Site, NV The first "subcritical" physics experiment at the Nevada Test Site, code-name "Rebound," provides scientific data on the behavior of plutonium without underground nuclear-weapons testing Administration | (NNSA)

    Thermonuclear Device Successfully Tested First Thermonuclear Device Successfully

  13. Regeneratively cooled transition duct with transversely buffered impingement nozzles

    DOE Patents [OSTI]

    Morrison, Jay A; Lee, Ching-Pang; Crawford, Michael E

    2015-04-21

    A cooling arrangement (56) having: a duct (30) configured to receive hot gases (16) from a combustor; and a flow sleeve (50) surrounding the duct and defining a cooling plenum (52) there between, wherein the flow sleeve is configured to form impingement cooling jets (70) emanating from dimples (82) in the flow sleeve effective to predominately cool the duct in an impingement cooling zone (60), and wherein the flow sleeve defines a convection cooling zone (64) effective to cool the duct solely via a cross-flow (76), the cross-flow comprising cooling fluid (72) exhausting from the impingement cooling zone. In the impingement cooling zone an undimpled portion (84) of the flow sleeve tapers away from the duct as the undimpled portion nears the convection cooling zone. The flow sleeve is configured to effect a greater velocity of the cross-flow in the convection cooling zone than in the impingement cooling zone.

  14. SMOOTH OIL & GAS FIELD OUTLINES MADE FROM BUFFERED WELLS

    U.S. Energy Information Administration (EIA) Indexed Site

    The VBA code provided at the bottom of this document is an updated version (from ArcGIS ... but with "smu" suffix added to name. The first layer must contain the well points ...

  15. Architecture and method for a burst buffer using flash technology

    DOE Patents [OSTI]

    Tzelnic, Percy; Faibish, Sorin; Gupta, Uday K.; Bent, John; Grider, Gary Alan; Chen, Hsing-bung

    2016-03-15

    A parallel supercomputing cluster includes compute nodes interconnected in a mesh of data links for executing an MPI job, and solid-state storage nodes each linked to a respective group of the compute nodes for receiving checkpoint data from the respective compute nodes, and magnetic disk storage linked to each of the solid-state storage nodes for asynchronous migration of the checkpoint data from the solid-state storage nodes to the magnetic disk storage. Each solid-state storage node presents a file system interface to the MPI job, and multiple MPI processes of the MPI job write the checkpoint data to a shared file in the solid-state storage in a strided fashion, and the solid-state storage node asynchronously migrates the checkpoint data from the shared file in the solid-state storage to the magnetic disk storage and writes the checkpoint data to the magnetic disk storage in a sequential fashion.

  16. 20141029-Smitasin-Tierney-LBLnet-buffer-experiments.pptx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    M B 200 2Gbps 24 M B 205 2Gbps 12 M B 204 2Gbps 6 M B 207 2Gbps 11314 4 30 S econd t est... 0 max---queue---size VALUE Full L BL t est r esults 11314 10 Full L BL t est r ...

  17. Dosage compensation can buffer copy-number variation in wild...

    Office of Scientific and Technical Information (OSTI)

    Publisher: eLife Sciences Publications, Ltd. Sponsoring Org: USDOE Country of Publication: United States Language: English Word Cloud More Like This Free Publicly Accessible Full ...

  18. Sensitivity of on-resistance and threshold voltage to buffer...

    Office of Scientific and Technical Information (OSTI)

    DOE Contract Number: AC04-94AL85000 Resource Type: Journal Article Resource ... Subject: solar (photovoltaic), solid state lighting, phonons, materials and chemistry by design, ...

  19. T-639: Debian update for libxml2 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    9: Debian update for libxml2 T-639: Debian update for libxml2 June 7, 2011 - 3:35pm Addthis PROBLEM: libxml2 is vulnerable to buffer overflows, which allowed a crafted XML input file to potentially execute arbitrary code. PLATFORM: Package: libxml2 version 2.7.8. Other versions may also be affected ABSTRACT: Libxml2 XPath Nodeset Processing Vulnerability reference LINKS: Secunia Advisory: SA44817 Secunia Advisory: SA44711 DSA 2255-1 Vulnerability Report: Debian GNU/Linux 6.0 Download Package

  20. DC BUFFERING AND FLOATING CURRENT FOR A HIGH VOLTAGE IMB APPLICATION

    SciTech Connect (OSTI)

    J.L. Morrison

    2014-08-01

    An interface technique for the latest generation of the Impedance Measurement Box (IMB) has been conceived to enable measurement of impedance spectra for battery modules up to 300V. A 300V capable or higher IMB is an enabling technology for in-situ diagnostics within electric vehicle charging stations or battery back-ups within power distribution sub-stations. It is possible that the existing IMB can be adapted via a 300V interface module to a test battery with voltage significantly greater than 50V. Recently a new concept was conceived for the calibration, algorithm and electronics of the IMB. That algorithm and calibration for that concept have been physically validated. The principal feature of the new electronics is the floating current source excitation of the battery under test. The single ended current excitation of the battery under test, used in the 50V IMB, requires that the negative terminal of the test battery must be the analog ground for the IMB. The new floating current technique allows the test battery to be fully high impedance isolated for a measurement. That isolation will improve IMB noise immunity and enable interrogation of cells internal to a battery module. All these techniques still use the same rapid concept for impedance measurement with the IMB. The purpose of this disclosure is to provide an overview of the analytical validation for three concepts to interface the floating current excitation to a high voltage battery. Recursive simulation models were used in different test scenarios to validate the various new concepts. The analysis will show that it is possible to interface the floating signal current to obtain an impedance measurement on a high voltage test battery. Additionally, the analysis will investigate stress seen by electronics while testing a 300V battery.

  1. The W-WO[subscript 2] oxygen fugacity buffer (WWO) at high pressure...

    Office of Scientific and Technical Information (OSTI)

    Rebecca A. ; Wang, Yanbin ; Prakapenka, Vitali 1 ; UC) 2 + Show Author Affiliations NASA-JSC ( Publication Date: 2016-01-11 OSTI Identifier: 1234736 Resource Type: Journal ...

  2. Intermixing at the absorber-buffer layer interface in thin-film...

    Office of Scientific and Technical Information (OSTI)

    ... DOPED MATERIALS; IMPURITIES; INTERFACES; LAYERS; PASSIVATION; PHOTOVOLTAIC EFFECT; RECOMBINATION; SOLAR CELLS; THIN FILMS; TRAPS; ZINC SULFIDES Word Cloud More Like This Full ...

  3. Buffer Chemical Polishing and RF Testing of the 56 MHz SRF Cavity

    SciTech Connect (OSTI)

    Burrill,A.

    2009-01-01

    The 56 MHz cavity presents a unique challenge in preparing it for RF testing prior to construction of the cryomodule. This challenge arises due to the physical dimensions and subsequent weight of the cavity, and is further complicated by the coaxial geometry, and the need to properly chemically etch and high pressure rinse the entire inner surface prior to RF testing. To the best of my knowledge, this is the largest all niobium SRF cavity to be chemically etched and subsequently tested in a vertical dewar at 4K, and these processes will be the topic of this technical note.

  4. Experimental Study of High-Z Gas Buffers in Gas-Filled ICF Engines

    SciTech Connect (OSTI)

    Rhodes, M A; Kane, J; Loosmore, G; DeMuth, J; Latkowski, J

    2010-12-03

    ICF power plants, such as the LIFE scheme at LLNL, may employ a high-Z, target-chamber gas-fill to moderate the first-wall heat-pulse due to x-rays and energetic ions released during target detonation. To reduce the uncertainties of cooling and beam/target propagation through such gas-filled chambers, we present a pulsed plasma source producing 2-5 eV plasma comprised of high-Z gases. We use a 5-kJ, 100-ns theta discharge for high peak plasma-heating-power, an electrode-less discharge for minimizing impurities, and unobstructed axial access for diagnostics and beam (and/or target) propagation studies. We will report on the plasma source requirements, design process, and the system design.

  5. GaAs buffer layer technique for vertical nanowire growth on Si...

    Office of Scientific and Technical Information (OSTI)

    OSTI Identifier: 22293061 Resource Type: Journal Article Resource Relation: Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) ...

  6. U-115: Novell GroupWise Client Address Book Processing Buffer...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    is vulnerable to an exploit where a malformed address book could cause heap memory corruption, which could lead to remote code execution under the privilege of the user that...

  7. Smart buildings with electric vehicle interconnection as buffer for local renewables?

    SciTech Connect (OSTI)

    Stadler, Michael; Cardoso, Goncalo; DeForest, Nicholas; Donadee, Jon; Gomez, Tomaz; Lai, Judy; Marnay, Chris; Megel, Olivier; Mendes, Goncalo; Siddiqui, Afzal

    2011-05-01

    Some conclusions from this presentation are: (1) EV Charging/discharging pattern mainly depends on the objective of the building (cost versus CO{sub 2}); (2) performed optimization runs show that stationary batteries are more attractive than mobile storage when putting more focus on CO{sub 2} emissions because stationary storage is available 24 hours a day for energy management - it's more effective; (3) stationary storage will be charged by PV, mobile only marginally; and (4) results will depend on the considered region and tariff. Final research work will show the results for 138 different buildings in nine different climate zones and three major utility service territories.

  8. Evaluation of the Effective Moisture Penetration Depth Model for Estimating Moisture Buffering in Buildings

    SciTech Connect (OSTI)

    Woods, J.; Winkler, J.; Christensen, D.

    2013-01-01

    This study examines the effective moisture penetration depth (EMPD) model, and its suitability for building simulations. The EMPD model is a compromise between the simple, inaccurate effective capacitance approach and the complex, yet accurate, finite-difference approach. Two formulations of the EMPD model were examined, including the model used in the EnergyPlus building simulation software. An error in the EMPD model we uncovered was fixed with the release of EnergyPlus version 7.2, and the EMPD model in earlier versions of EnergyPlus should not be used.

  9. Buffer layer for thin film structures (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    OSTI Identifier: 1176358 Report Number(s): 7,736,761 11591,269 DOE Contract Number: AC52-06NA25396 Resource Type: Patent Research Org: Los Alamos National Laboratory (LANL), Los ...

  10. CUG Honors NERSC Burst Buffer Early User Program with 'Best Paper'

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CTBT NNSA hosts international CTBT on-site inspection experts at Nevada National Security Site This month, NNSA hosted a Comprehensive Nuclear-Test-Ban Treaty (CTBT) on-site inspection activity at the Nevada National Security Site (NNSS). For the first time, CTBT surrogate inspectors and other inspection experts were able to visit NNSS, a former nuclear explosive test site that now supports... Head of Comprehensive Nuclear-Test-Ban Treaty Organization (CTBTO) Preparatory Commission Visits NNSA's

  11. High rate buffer layer for IBAD MgO coated conductors

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.

    2007-08-21

    Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.

  12. Experimental Study of High-Z Gas Buffers in Gas-Filled ICF Engines...

    Office of Scientific and Technical Information (OSTI)

    and energetic ions released during target detonation. To reduce the uncertainties of cooling and beamtarget propagation through such gas-filled chambers, we present a pulsed...

  13. Sandia National Laboratories: Products and Services

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Gages, Fixtures, Molds Power Sources & Batteries Manufacturing, Shop Overflow through the Manufacturing Processes & Services Department Energy, Security & International Procurement...

  14. Fabrication of Sr silicate buffer layer on Si(100) substrate by pulsed laser deposition using a SrO target

    SciTech Connect (OSTI)

    Imanaka, Atsuhiro; Sasaki, Tsubasa; Hotta, Yasushi Satoh, Shin-ichi

    2014-09-01

    The authors fabricated 2??1 Sr-reconstructed Si(100) substrates using thin SrO layers, and used them to direct growth of crystalline perovskite oxide on Si. The SrO layers used to reconstruct the Si(100) substrates were grown by pulsed laser deposition from a SrO single crystal target, followed by postdeposition-annealing (PDA) of the SrO/Si(100) structure. In situ observations of reflective high-energy electron diffraction during PDA confirmed a 2??1 reconstruction of the Si surface and x-ray photoemission spectroscopy of the annealed samples confirmed the existence of Sr atoms in a silicate phase, which indicated that a 2??1 Sr-reconstructed Si surface was achieved. The optimal fabrication conditions were annealing at 720?C for 1?min and an equivalent SrO layer thickness (ML{sub eq}) of 2.5 ML{sub eq}. The temperature condition was very narrow, at 720??20?C, for an acceptable product. Subsequently, the authors demonstrated the growth of crystalline SrTiO{sub 3} films on the 2??1 Sr-reconstructed Si(100) surfaces.

  15. Microsoft Word - Final Contact Record 2014-01 ETPTS Media Removal...

    Office of Legacy Management (LM)

    ... to allow further planning and implementation as ... Pond discharge via the emergency overflow spillway will only ... NNG01, and location(s) of problems andor repairs; and ...

  16. Framework to predict optimal buffer layer pairing for thin film solar cell absorbers: A case study for tin sulfide/zinc oxysulfide

    SciTech Connect (OSTI)

    Mangan, Niall M.; Brandt, Riley E.; Steinmann, Vera; Jaramillo, R.; Poindexter, Jeremy R.; Chakraborty, Rupak; Buonassisi, Tonio; Yang, Chuanxi; Park, Helen Hejin; Zhao, Xizhu; Gordon, Roy G.

    2015-09-21

    An outstanding challenge in the development of novel functional materials for optoelectronic devices is identifying suitable charge-carrier contact layers. Herein, we simulate the photovoltaic device performance of various n-type contact material pairings with tin(II) sulfide (SnS), a p-type absorber. The performance of the contacting material, and resulting device efficiency, depend most strongly on two variables: conduction band offset between absorber and contact layer, and doping concentration within the contact layer. By generating a 2D contour plot of device efficiency as a function of these two variables, we create a performance-space plot for contacting layers on a given absorber material. For a simulated high-lifetime SnS absorber, this 2D performance-space illustrates two maxima, one local and one global. The local maximum occurs over a wide range of contact-layer doping concentrations (below 10{sup 16 }cm{sup −3}), but only a narrow range of conduction band offsets (0 to −0.1 eV), and is highly sensitive to interface recombination. This first maximum is ideal for early-stage absorber research because it is more robust to low bulk-minority-carrier lifetime and pinholes (shunts), enabling device efficiencies approaching half the Shockley-Queisser limit, greater than 16%. The global maximum is achieved with contact-layer doping concentrations greater than 10{sup 18 }cm{sup −3}, but for a wider range of band offsets (−0.1 to 0.2 eV), and is insensitive to interface recombination. This second maximum is ideal for high-quality films because it is more robust to interface recombination, enabling device efficiencies approaching the Shockley-Queisser limit, greater than 20%. Band offset measurements using X-ray photoelectron spectroscopy and carrier concentration approximated from resistivity measurements are used to characterize the zinc oxysulfide contacting layers in recent record-efficiency SnS devices. Simulations representative of these present-day devices suggest that record efficiency SnS devices are optimized for the second local maximum, due to low absorber lifetime and relatively well passivated interfaces. By employing contact layers with higher carrier concentrations and lower electron affinities, a higher efficiency ceiling can be enabled.

  17. Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO3-buffered ferroelectric BaTiO3 film on GaAs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qiao, Q.; Zhang, Y.; Contreras-Guerrero, Rocio; Droopad, Ravi; Pantelides, S. T.; Pennycook, Stephen J.; Ogut, Serdar; Klie, Robert F.

    2015-11-16

    The integration of functional oxide thin-films on compound semiconductors can lead to a class of reconfigurable spin-based optoelectronic devices if defect-free, fully reversible active layers are stabilized. However, previous first-principles calculations predicted that SrTiO3 thin filmsgrown on Si exhibit pinned ferroelectric behavior that is not switchable, due to the presence of interfacial vacancies. Meanwhile, piezoresponse force microscopy measurements have demonstrated ferroelectricity in BaTiO3 grown on semiconductor substrates. The presence of interfacial oxygen vacancies in such complex-oxide/semiconductor systems remains unexplored, and their effect on ferroelectricity is controversial. We also use a combination of aberration-corrected scanning transmission electron microscopy and first-principles densitymore » functional theory modeling to examine the role of interfacial oxygen vacancies on the ferroelectricpolarization of a BaTiO3 thin filmgrown on GaAs. Moreover, we demonstrate that interfacial oxygen vacancies enhance the polar discontinuity (and thus the single domain, out-of-plane polarization pinning in BaTiO3), and propose that the presence of surface charge screening allows the formation of switchable domains.« less

  18. Acceptance for Beneficial Use for the 100K Service Water Pumps Auto Start Modifications Project 1K-97-3466M

    SciTech Connect (OSTI)

    MULLER, F.J.

    2000-03-27

    This Acceptance for Beneficial Use checklist covers the modifications to the K Basins service water pumps that added an auto-start function for reliability of the fire suppression system. The following information is to document the Acceptance for Beneficial Use (ABU) with a checklist and supporting information. The service water pumps have been modified so that on low system pressure after a time delay, the standby pump will automatically start. This ABU checklist matrix indicates the organizations that are responsible for the preparation of --or for the provision of input to--the identified documentation required by K Basins Operations. Looking at the items in the matrix, it can be seen that the subproject does not bear the sole responsibility for the generation of all these items. Rather, many items are outside of the subproject's scope such that other Spent Nuclear Fuel (SNF) organizations are needed to prepare or perform them (e.g., Training, Procedures, Facility Engineering, Startup, etc.). This supporting document, by virtue of all signatures approving it on the Engineering Data Transmittal, documents an agreement among the various represented disciplines and organizations within the SNF Project as to what is required in terms of documentation to transfer custody to Operations.

  19. Apparatus for controlling coolant level in a liquid-metal-cooled nuclear reactor

    DOE Patents [OSTI]

    Jones, Robert D.

    1978-01-01

    A liquid-metal-cooled fast-breeder reactor which has a thermal liner spaced inwardly of the pressure vessel and includes means for passing bypass coolant through the annulus between the thermal liner and the pressure vessel to insulate the pressure vessel from hot outlet coolant includes control ports in the thermal liner a short distance below the normal operating coolant level in the reactor and an overflow nozzle in the pressure vessel below the control ports connected to an overflow line including a portion at an elevation such that overflow coolant flow is established when the coolant level in the reactor is above the top of the coolant ports. When no makeup coolant is added, bypass flow is inwardly through the control ports and there is no overflow; when makeup coolant is being added, coolant flow through the overflow line will maintain the coolant level.

  20. Valve for controlling solids flow

    DOE Patents [OSTI]

    Staiger, M. Daniel (Idaho Falls, ID)

    1985-01-01

    A valve for controlling the flow of solids comprises a vessel having an overflow point, an inlet line for discharging solids into the vessel positioned within the vessel such that the inlet line's discharge point is lower than the vessel's overflow point, and apparatus for introducing a fluidizing fluid into the vessel. The fluidizing fluid fluidizes the solids within the vessel so that they overflow at the vessel's overflow point. For the removal of nuclear waste product the vessel may be placed within a sealed container having a bottom connected transport line for transporting the solids to storage or other sites. The rate of solids flow is controlled by the flow rate of the fluidizing fluid and by V-notch weirs of different sizes spaced about the top of the vessel.

  1. EECBG Success Story: Georgia County Turning Industrial and Farm Waste Into Big Energy Savings

    Broader source: Energy.gov [DOE]

    Gwinnett County, Georgia built a "Gas to Energy" system at the city water resources center that will reduce operational costs and sanitary sewer overflows, thanks to an Energy Efficiency and Conservation Block Grant (EECBG). Learn more.

  2. Stochastic Consequence Analysis for Waste Leaks

    SciTech Connect (OSTI)

    HEY, B.E.

    2000-05-31

    This analysis evaluates the radiological consequences of potential Hanford Tank Farm waste transfer leaks. These include ex-tank leaks into structures, underneath the soil, and exposed to the atmosphere. It also includes potential misroutes, tank overflow

  3. CX-008202: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Renewable Energy Ground Mounted Photovoltaic Grid System Overflow CX(s) Applied: B5.16 Date: 03/29/2012 Location(s): Other Location Offices(s): Golden Field Office

  4. CX-008336: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Pad 90 Overflow Parking Lot Project CX(s) Applied: B1.15 Date: 05/01/2012 Location(s): New York Offices(s): Naval Nuclear Propulsion Program

  5. U-170: Apple QuickTime Multiple Flaws Let Remote Users Execute...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    overflow CVE-2012-0670. A specially crafted '.pict' file can trigger a memory corruption error CVE-2012-0671. Impact: A remote user can create a file that, when loaded by...

  6. Valve for controlling solids flow

    DOE Patents [OSTI]

    Staiger, M.D.

    1982-09-29

    A valve for controlling the flow of solids comprises a vessel having an overflow point, an inlet line for discharging solids into the vessel positioned within the vessel such that the inlet line's discharge point is lower than the vessel's overflow point, and means for introducing a fluidizing fluid into the vessel. The fluidizing fluid fluidizes the solids within the vessel so that they overflow at the vessel's overflow point. For the removal of nuclear waste product the vessel may be placed within a sealed container having a bottom connected transport line for transporting the solids to storage or other sites. The rate of solids flow is controlled by the flow rate of the fluidizing fluid and by V-notch weirs of different sizes spaced about the top of the vessel.

  7. CX-008279: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Building 8 Compressor Aftercooler Rupture Disc Overflow Piping Project CX(s) Applied: B1.3, B1.15 Date: 05/09/2012 Location(s): West Virginia Offices(s): National Energy Technology Laboratory

  8. 05-05-2010 NNSA-B-10-0144

    National Nuclear Security Administration (NNSA)

    elevated water storage tanks located in Coyote Test Field (CTF). The overflow lines are required to extend to within 18 inches (in.) of ground level by the American Water Workers ...

  9. Subterranean drilling and in situ treatment of wastes using a contamination control system and methods relating thereto

    DOE Patents [OSTI]

    Jessmore, James J.; Loomis, Guy G.; Pettet, Mark C.; Flyckt, Melissa C.

    2004-09-28

    Systems and methods relating to subterranean drilling while maintaining containment of any contaminants released during the drilling. A thrust block installed over a zone of interest provides an overflow space for retaining any contaminants and excess sealant returns. Negative air pressure may be maintained in the overflow space by a ventilation system. Access ports in the thrust block seal the overflow space from the surrounding environment with a membrane seal. A flexible sack seal in the access port may be connected to a drill shroud prior to drilling, providing containment during drilling after the drill bit penetrates the membrane seal. The drill shroud may be adapted to any industry standard drilling rig and includes a connection conduit for connecting to the flexible sack seal and a flexible enclosure surrounding the drill shaft and of a length to accommodate full extension thereof. Upon withdrawal, the sack seal may be closed off and separated, maintaining containment of the overflow space and the drill shroud.

  10. Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO3-buffered ferroelectric BaTiO3 film on GaAs

    SciTech Connect (OSTI)

    Qiao, Q.; Zhang, Y.; Contreras-Guerrero, Rocio; Droopad, Ravi; Pantelides, S. T.; Pennycook, Stephen J.; Ogut, Serdar; Klie, Robert F.

    2015-11-16

    The integration of functional oxide thin-films on compound semiconductors can lead to a class of reconfigurable spin-based optoelectronic devices if defect-free, fully reversible active layers are stabilized. However, previous first-principles calculations predicted that SrTiO3 thin filmsgrown on Si exhibit pinned ferroelectric behavior that is not switchable, due to the presence of interfacial vacancies. Meanwhile, piezoresponse force microscopy measurements have demonstrated ferroelectricity in BaTiO3 grown on semiconductor substrates. The presence of interfacial oxygen vacancies in such complex-oxide/semiconductor systems remains unexplored, and their effect on ferroelectricity is controversial. We also use a combination of aberration-corrected scanning transmission electron microscopy and first-principles density functional theory modeling to examine the role of interfacial oxygen vacancies on the ferroelectricpolarization of a BaTiO3 thin filmgrown on GaAs. Moreover, we demonstrate that interfacial oxygen vacancies enhance the polar discontinuity (and thus the single domain, out-of-plane polarization pinning in BaTiO3), and propose that the presence of surface charge screening allows the formation of switchable domains.