National Library of Energy BETA

Sample records for atoms wide grown

  1. Atomic structure of defects in GaN:Mg grown with Ga polarity

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

    2003-11-25

    Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {l_brace}11{und 2}3{r_brace} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 {+-} 0.2{angstrom} displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base.

  2. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    SciTech Connect (OSTI)

    Tamm, Aile Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan; Kukli, Kaupo; Link, Joosep; Stern, Raivo

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  3. Nanostructured and wide bandgap CdS:O thin films grown by reactive RF sputtering

    SciTech Connect (OSTI)

    Islam, M. A.; Rahman, K. S.; Haque, F.; Rashid, M. J.; Akhtaruzzaman, M.; Sopian, K.; Sulaiman, Y.; Amin, N.

    2015-05-15

    In this study, CdS:O thin films were prepared from a 99.999% CdS target by reactive sputtering in a Ar:O{sub 2} (99:1) ambient with different RF power at room temperature. The deposited films were studied by means of XRD, SEM, EDX, Hall Effect and UV-Vis spectrometry. The incorporations of O{sub 2} into the films were observed to increase with the decrease of deposition power. The cryatallinity of the films were reduced, whereas the band gaps of the films were increased by the increase of O{sub 2} content on the films. The films were found in nano-structured grains with a compact surface. It has been seen that the highest carrier density is observed in the film with O{sub 2} at.% 21.10, while the values decreased with the further increase or decrease of O{sub 2} content on the films; indicating that specific amount of donor like O{sub 2} atoms substitute to the S atoms can improve the carrier density of the CdS:O thin film.

  4. Characterization of ZnO film grown on polycarbonate by atomic layer deposition at low temperature

    SciTech Connect (OSTI)

    Lee, Gyeong Beom; Han, Gwon Deok; Shim, Joon Hyung; Choi, Byoung-Ho

    2015-01-15

    ZnO is an attractive material for use in various technological products such as phosphors, gas sensors, and transparent conductors. Recently, aluminum-doped zinc oxide has received attention as a potential replacement for indium tin oxide, which is one of the transparent conductive oxides used in flat panel displays, organic light-emitting diodes, and organic solar cells. In this study, the characteristics of ZnO films deposited on polycarbonate (PC) substrates by atomic layer deposition (ALD) are investigated for various process temperatures. The growth mechanism of these films was investigated at low process temperatures using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). XRD and XPS were used to determine the preferred orientation and chemical composition of the films, respectively. Furthermore, the difference of the deposition mechanisms on an amorphous organic material, i.e., PC substrate and an inorganic material such as silicon was discussed from the viewpoint of the diffusion and deposition of precursors. The structure of the films was also investigated by chemical analysis in order to determine the effect of growth temperature on the films deposited by ALD.

  5. Density dependence of the room temperature thermal conductivity of atomic layer deposition-grown amorphous alumina (Al{sub 2}O{sub 3})

    SciTech Connect (OSTI)

    Gorham, Caroline S.; Gaskins, John T.; Hopkins, Patrick E.; Parsons, Gregory N.; Losego, Mark D.

    2014-06-23

    We report on the thermal conductivity of atomic layer deposition-grown amorphous alumina thin films as a function of atomic density. Using time domain thermoreflectance, we measure the thermal conductivity of the thin alumina films at room temperature. The thermal conductivities vary ?35% for a nearly 15% change in atomic density and are substrate independent. No density dependence of the longitudinal sound speeds is observed with picosecond acoustics. The density dependence of the thermal conductivity agrees well with a minimum limit to thermal conductivity model that is modified with a differential effective-medium approximation.

  6. Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy

    SciTech Connect (OSTI)

    Hosseini Vajargah, S.; Woo, S. Y.; Botton, G. A.; Ghanad-Tavakoli, S.; Kleiman, R. N.; Preston, J. S.

    2012-11-01

    The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs' faceting.

  7. Enhanced photocatalytic performance in atomic layer deposition grown TiO{sub 2} thin films via hydrogen plasma treatment

    SciTech Connect (OSTI)

    Sasinska, Alexander; Singh, Trilok; Wang, Shuangzhou; Mathur, Sanjay; Kraehnert, Ralph

    2015-01-15

    The authors report the effect of hydrogen plasma treatment on TiO{sub 2} thin films grown by atomic layer deposition as an effective approach for modifying the photoanode materials in order to enhance their photoelectrochemical performance. Hydrogen plasma treated TiO{sub 2} thin films showed an improved absorption in the visible spectrum probably due to surface reduction. XPS analysis confirmed the formation of Ti{sup 3+} states upon plasma treatment. Hydrogen plasma treatment of TiO{sub 2} films enhanced the measured photocurrent densities by a factor of 8 (1 mA/cm{sup 2} at 0.8 V versus normal hydrogen electrode) when compared to untreated TiO{sub 2} (0.12 mA/cm{sup 2}). The enhancement in photocurrent is attributed to the formation of localized electronic states in mid band-gap region, which facilitate efficient separation and transportation of photo excited charge carriers in the UV region of electromagnetic spectrum.

  8. Atomic layer deposition grown MO{sub x} thin films for solar water splitting: Prospects and challenges

    SciTech Connect (OSTI)

    Singh, Trilok; Lehnen, Thomas; Leuning, Tessa; Mathur, Sanjay

    2015-01-15

    The magnitude of energy challenge not only calls for efficient devices but also for abundant, inexpensive, and stable photoactive materials that can enable efficient light harvesting, charge separation and collection, as well as chemical transformations. Photoelectrochemical systems based on semiconductor materials have the possibility to transform solar energy directly into chemical energy the so-called “solar hydrogen.” The current challenge lies in the harvesting of a larger fraction of electromagnetic spectrum by enhancing the absorbance of electrode materials. In this context, atomically precise thin films of metal oxide semiconductors and their multilayered junctions are promising candidates to integrate high surface areas with well-defined electrode–substrate interface. Given its self-limited growth mechanism, the atomic layer deposition (ALD) technique offers a wide range of capabilities to deposit and modify materials at the nanoscale. In addition, it opens new frontiers for developing precursor chemistry that is inevitable to design new processes. Herein, the authors review the properties and potential of metal oxide thin films deposited by ALD for their application in photoelectrochemical water splitting application. The first part of the review covers the basics of ALD processes followed by a brief discussion on the electrochemistry of water splitting reaction. The second part focuses on different MO{sub x} films deposited by atomic layer deposition for water splitting applications; in this section, The authors discuss the most explored MO{sub x} semiconductors, namely, Fe{sub 2}O{sub 3}, TiO{sub 2}, WO{sub 3}, and ZnO, as active materials and refer to their application as protective coatings, conductive scaffolds, or in heterojunctions. The third part deals with the current challenges and future prospects of ALD processed MO{sub x} thin films for water splitting reactions.

  9. Photo-induced valence change of the sulfur atom in an L-cysteine thin film grown on a silver metal substrate in a saliva-emulated aqueous solution

    SciTech Connect (OSTI)

    Tsujibayashi, Toru; Azuma, Junpei; Yamamoto, Isamu; Takahashi, Kazutoshi; Kamada, Masao

    2015-04-27

    A thin film of L-cysteine (HSCH{sub 2}CH(NH{sub 2})COOH) is grown on a silver substrate in saliva-emulated aqueous solution. X-ray photoemission spectroscopic measurements have revealed that the sulfur atom shows valence change under IR laser irradiation at 825?nm. The valence change maintains for about a minute at room temperature and more than an hour between 110 and 250?K after stopping the laser irradiation. It is not observed at all at temperatures lower than 110?K. This temperature-dependent behavior indicates that the photo-excited electronic change should be accompanied by a conformational change in the L-cysteine molecule. It is strongly suggested that the reversible valence change of the sulfur atom is applicable to a memory used around room temperature.

  10. Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering

    SciTech Connect (OSTI)

    Schiaber, Ziani S.; Lisboa-Filho, Paulo N.; Silva, Jos H. D. da; Leite, Douglas M. G.; Bortoleto, Jos R. R.

    2013-11-14

    The combined effects of substrate temperature, substrate orientation, and energetic particle impingement on the structure of GaN films grown by reactive radio-frequency magnetron sputtering are investigated. Monte-Carlo based simulations are employed to analyze the energies of the species generated in the plasma and colliding with the growing surface. Polycrystalline films grown at temperatures ranging from 500 to 1000 C clearly showed a dependence of orientation texture and surface morphology on substrate orientation (c- and a-plane sapphire) in which the (0001) GaN planes were parallel to the substrate surface. A large increase in interplanar spacing associated with the increase in both a- and c-parameters of the hexagonal lattice and a redshift of the optical bandgap were observed at substrate temperatures higher than 600 C. The results showed that the tensile stresses produced during the film's growth in high-temperature deposition ranges were much larger than the expected compressive stresses caused by the difference in the thermal expansion coefficients of the film and substrate in the cool-down process after the film growth. The best films were deposited at 500 C, 30 W and 600 C, 45 W, which corresponds to conditions where the out diffusion from the film is low. Under these conditions the benefits of the temperature increase because of the decrease in defect density are greater than the problems caused by the strongly strained lattice that occurr at higher temperatures. The results are useful to the analysis of the growth conditions of GaN films by reactive sputtering.

  11. Work function variation of MoS{sub 2} atomic layers grown with chemical vapor deposition: The effects of thickness and the adsorption of water/oxygen molecules

    SciTech Connect (OSTI)

    Kim, Jong Hun; Kim, Jae Hyeon; Park, Jeong Young E-mail: jeongypark@kaist.ac.kr; Lee, Jinhwan; Hwang, C. C.; Lee, Changgu E-mail: jeongypark@kaist.ac.kr

    2015-06-22

    The electrical properties of two-dimensional atomic sheets exhibit remarkable dependences on layer thickness and surface chemistry. Here, we investigated the variation of the work function properties of MoS{sub 2} films prepared with chemical vapor deposition (CVD) on SiO{sub 2} substrates with the number of film layers. Wafer-scale CVD MoS{sub 2} films with 2, 4, and 12 layers were fabricated on SiO{sub 2}, and their properties were evaluated by using Raman and photoluminescence spectroscopies. In accordance with our X-ray photoelectron spectroscopy results, our Kelvin probe force microscopy investigation found that the surface potential of the MoS{sub 2} films increases by ∼0.15 eV when the number of layers is increased from 2 to 12. Photoemission spectroscopy (PES) with in-situ annealing under ultra high vacuum conditions was used to directly demonstrate that this work function shift is associated with the screening effects of oxygen or water molecules adsorbed on the film surface. After annealing, it was found with PES that the surface potential decreases by ∼0.2 eV upon the removal of the adsorbed layers, which confirms that adsorbed species have a role in the variation in the work function.

  12. Influence of dosing sequence and film thickness on structure and resistivity of Al-ZnO films grown by atomic layer deposition

    SciTech Connect (OSTI)

    Pollock, Evan B. Lad, Robert J.

    2014-07-01

    Aluminum-doped zinc oxide (AZO) films were deposited onto amorphous silica substrates using an atomic layer deposition process with diethyl zinc (DEZ), trimethyl aluminum (TMA), and deionized water at 200 °C. Three different Al doping sequences were used at a ZnO:Al ratio of 11:1 within the films. A minimum film resistivity of 1.6 × 10{sup −3} Ω cm was produced using sequential dosing of DEZ, TMA, DEZ, followed by H{sub 2}O for the Al doping step. This “ZAZW” sequence yielded an AZO film resistivity that is independent of film thickness, crystallographic texture, and grain size, as determined by high resolution x-ray diffraction (XRD). A pseudo-Voigt analysis method yields values for grain sizes that are smaller than those calculated using other XRD methods. Anisotropic grain sizes or variations in crystallographic texture have minimal influence on film resistivity, which suggests that factors other than film texture, such as intragrain scattering, may be important in influencing film resistivity.

  13. Quasi-two-dimensional electron gas at the interface of γ-Al{sub 2}O{sub 3}/SrTiO{sub 3} heterostructures grown by atomic layer deposition

    SciTech Connect (OSTI)

    Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G.; Goble, Nicholas J.; Gao, Xuan P. A.; Posadas, Agham; Kormondy, Kristy J.; Demkov, Alexander A.; Lu, Sirong; Jordan-Sweet, Jean; Smith, David J.

    2015-09-21

    We report the formation of a quasi-two-dimensional electron gas (2-DEG) at the interface of γ-Al{sub 2}O{sub 3}/TiO{sub 2}-terminated SrTiO{sub 3} (STO) grown by atomic layer deposition (ALD). The ALD growth of Al{sub 2}O{sub 3} on STO(001) single crystal substrates was performed at temperatures in the range of 200–345 °C. Trimethylaluminum and water were used as co-reactants. In situ reflection high energy electron diffraction, ex situ x-ray diffraction, and ex situ cross-sectional transmission electron microscopy were used to determine the crystallinity of the Al{sub 2}O{sub 3} films. As-deposited Al{sub 2}O{sub 3} films grown above 300 °C were crystalline with the γ-Al{sub 2}O{sub 3} phase. In situ x-ray photoelectron spectroscopy was used to characterize the Al{sub 2}O{sub 3}/STO interface, indicating that a Ti{sup 3+} feature in the Ti 2p spectrum of STO was formed after 2–3 ALD cycles of Al{sub 2}O{sub 3} at 345 °C and even after the exposure to trimethylaluminum alone at 300 and 345 °C. The interface quasi-2-DEG is metallic and exhibits mobility values of ∼4 and 3000 cm{sup 2} V{sup −1} s{sup −1} at room temperature and 15 K, respectively. The interfacial conductivity depended on the thickness of the Al{sub 2}O{sub 3} layer. The Ti{sup 3+} signal originated from the near-interfacial region and vanished after annealing in an oxygen environment.

  14. Isotope analysis of diamond-surface passivation effect of high-temperature H{sub 2}O-grown atomic layer deposition-Al{sub 2}O{sub 3} films

    SciTech Connect (OSTI)

    Hiraiwa, Atsushi E-mail: qs4a-hriw@asahi-net.or.jp; Saito, Tatsuya; Matsumura, Daisuke; Kawarada, Hiroshi

    2015-06-07

    The Al{sub 2}O{sub 3} film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H{sub 2}O as oxidant at a high temperature (450?C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400?C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D{sub 2}O instead of H{sub 2}O in the ALD and found that the Al{sub 2}O{sub 3} film formed at a conventional temperature (100?C) incorporates 50 times more CH{sub 3} groups than the high-temperature film. This CH{sub 3} is supposed to dissociate from the film when heated afterwards at a higher temperature (550?C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H{sub 2}O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H{sub 2}O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D{sub 2}O-oxidant ALD but found that the mass density and dielectric constant of D{sub 2}O-grown Al{sub 2}O{sub 3} films are smaller than those of H{sub 2}O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al{sub 2}O{sub 3} films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the knowledge of the

  15. Design of a self-aligned, wide temperature range (300 mK-300 K) atomic force microscope/magnetic force microscope with 10 nm magnetic force microscope resolution

    SciTech Connect (OSTI)

    Karc?, zgr; Dede, Mnir

    2014-10-01

    We describe the design of a wide temperature range (300 mK-300 K) atomic force microscope/magnetic force microscope with a self-aligned fibre-cantilever mechanism. An alignment chip with alignment groves and a special mechanical design are used to eliminate tedious and time consuming fibre-cantilever alignment procedure for the entire temperature range. A low noise, Michelson fibre interferometer was integrated into the system for measuring deflection of the cantilever. The spectral noise density of the system was measured to be ~12 fm/?Hz at 4.2 K at 3 mW incident optical power. Abrikosov vortices in BSCCO(2212) single crystal sample and a high density hard disk sample were imaged at 10 nm resolution to demonstrate the performance of the system.

  16. Effect of postdeposition annealing on the electrical properties of ?-Ga{sub 2}O{sub 3} thin films grown on p-Si by plasma-enhanced atomic layer deposition

    SciTech Connect (OSTI)

    Altuntas, Halit; Donmez, Inci; Ozgit-Akgun, Cagla; Biyikli, Necmi

    2014-07-01

    Ga{sub 2}O{sub 3} dielectric thin films were deposited on (111)-oriented p-type silicon wafers by plasma-enhanced atomic layer deposition using trimethylgallium and oxygen plasma. Structural analysis of the Ga{sub 2}O{sub 3} thin films was carried out using grazing-incidence x-ray diffraction. As-deposited films were amorphous. Upon postdeposition annealing at 700, 800, and 900?C for 30?min under N{sub 2} ambient, films crystallized into ?-form monoclinic structure. Electrical properties of the ?-Ga{sub 2}O{sub 3} thin films were then investigated by fabricating and characterizing Al/?-Ga{sub 2}O{sub 3}/p-Si metaloxide-semiconductor capacitors. The effect of postdeposition annealing on the leakage current densities, leakage current conduction mechanisms, dielectric constants, flat-band voltages, reverse breakdown voltages, threshold voltages, and effective oxide charges of the capacitors were presented. The effective oxide charges (Q{sub eff}) were calculated from the capacitancevoltage (C-V) curves using the flat-band voltage shift and were found as 2.6??10{sup 12}, 1.9??10{sup 12}, and 2.5??10{sup 12} cm{sup ?2} for samples annealed at 700, 800, and 900?C, respectively. Effective dielectric constants of the films decreased with increasing annealing temperature. This situation was attributed to the formation of an interfacial SiO{sub 2} layer during annealing process. Leakage mechanisms in the regions where current increases gradually with voltage were well fitted by the Schottky emission model for films annealed at 700 and 900?C, and by the FrenkelPoole emission model for film annealed at 800?C. Leakage current density was found to improve with annealing temperature. ?-Ga{sub 2}O{sub 3} thin film annealed at 800?C exhibited the highest reverse breakdown field value.

  17. Atomic-scale electrochemistry on the surface of a manganite

    SciTech Connect (OSTI)

    Vasudevan, Rama K; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V

    2015-01-01

    The doped manganese oxides (manganites) have been widely studied for their colossal magnetoresistive effects, for potential applications in oxide spintronics, electroforming in resistive switching devices, and are materials of choice as cathodes in modern solid oxide fuel cells. However, little experimental knowledge of the dynamics of the surfaces of perovskite manganites at the atomic scale exists. Here, through in-situ scanning tunnelling microscopy (STM), we demonstrate atomic resolution on samples of La0.625Ca0.375MnO3 grown on (001) SrTiO3 by pulsed laser deposition (PLD). Furthermore, by applying triangular DC waveforms of increasing amplitude to the STM tip, and measuring the tunnelling current, we demonstrate the ability to both perform and monitor surface electrochemical processes at the atomic level, including, for the first time in a manganite, formation of single and multiple oxygen vacancies, disruption of the overlying manganite layers, and removal and deposition of individual atomic units or clusters. Our work paves the way for better understanding of surface oxygen reactions in these systems.

  18. Atomic-scale electrochemistry on the surface of a manganite

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Vasudevan, Rama K; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V

    2015-01-01

    The doped manganese oxides (manganites) have been widely studied for their colossal magnetoresistive effects, for potential applications in oxide spintronics, electroforming in resistive switching devices, and are materials of choice as cathodes in modern solid oxide fuel cells. However, little experimental knowledge of the dynamics of the surfaces of perovskite manganites at the atomic scale exists. Here, through in-situ scanning tunnelling microscopy (STM), we demonstrate atomic resolution on samples of La0.625Ca0.375MnO3 grown on (001) SrTiO3 by pulsed laser deposition (PLD). Furthermore, by applying triangular DC waveforms of increasing amplitude to the STM tip, and measuring the tunnelling current, we demonstratemore » the ability to both perform and monitor surface electrochemical processes at the atomic level, including, for the first time in a manganite, formation of single and multiple oxygen vacancies, disruption of the overlying manganite layers, and removal and deposition of individual atomic units or clusters. Our work paves the way for better understanding of surface oxygen reactions in these systems.« less

  19. ATOM | NISAC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NISACATOM content top Network Optimization Models (RNAS and ATOM) Posted by Admin on Mar 1, 2012 in | Comments 0 comments Many critical infrastructures can be represented by a...

  20. Environmentally Benign Electrolytes With Wide Electrochemical Windows -

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy Innovation Portal Environmentally Benign Electrolytes With Wide Electrochemical Windows DOE Grant Recipients Arizona Technology Enterprises Contact Arizona Technology Enterprises About This Technology Technology Marketing SummaryAs mobile electronics continue to evolve, the need for safe, long-lasting rechargeable batteries has grown tremendously. In the search for suitable materials from which to construct high energy density solid state batteries, one of the principal obstacles has

  1. Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

    SciTech Connect (OSTI)

    Cohen, Eyal; Yochelis, Shira; Westreich, Ohad; Shusterman, Sergey; Kumah, Divine P.; Clarke, Roy; Yacoby, Yizhak; Paltiel, Yossi

    2011-09-06

    We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy (DHE) technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski-Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar.

  2. Atom Interferometry

    ScienceCinema (OSTI)

    Mark Kasevich

    2010-01-08

    Atom de Broglie wave interferometry has emerged as a tool capable of addressing a diverse set of questions in gravitational and condensed matter physics, and as an enabling technology for advanced sensors in geodesy and navigation. This talk will review basic principles, then discuss recent applications and future directions. Scientific applications to be discussed include measurement of G (Newton?s constant), tests of the Equivalence Principle and post-Newtonian gravity, and study of the Kosterlitz-Thouless phase transition in layered superfluids. Technology applications include development of precision gryoscopes and gravity gradiometers. The talk will conclude with speculative remarks looking to the future: Can atom interference methods be sued to detect gravity waves? Can non-classical (entangled/squeezed state) atom sources lead to meaningful sensor performance improvements?

  3. Atom Interferometry

    SciTech Connect (OSTI)

    Mark Kasevich

    2008-05-07

    Atom de Broglie wave interferometry has emerged as a tool capable of addressing a diverse set of questions in gravitational and condensed matter physics, and as an enabling technology for advanced sensors in geodesy and navigation. This talk will review basic principles, then discuss recent applications and future directions. Scientific applications to be discussed include measurement of G (Newton’s constant), tests of the Equivalence Principle and post-Newtonian gravity, and study of the Kosterlitz-Thouless phase transition in layered superfluids. Technology applications include development of precision gryoscopes and gravity gradiometers. The talk will conclude with speculative remarks looking to the future: Can atom interference methods be sued to detect gravity waves? Can non-classical (entangled/squeezed state) atom sources lead to meaningful sensor performance improvements?

  4. An Atomic-Level Understanding of Copper-Based Catalysts

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    An Atomic-Level Understanding of Copper-Based Catalysts An Atomic-Level Understanding of Copper-Based Catalysts Print Thursday, 05 May 2016 12:20 Copper-based catalysts are widely ...

  5. the World Wide Web

    Office of Scientific and Technical Information (OSTI)

    technical report has been made electronically available on the World Wide Web through a contribution from Walter L. Warnick In honor of Enrico Fermi Leader of the first nuclear ...

  6. Atomic-scale electrochemistry on the surface of a manganite by scanning tunneling microscopy

    SciTech Connect (OSTI)

    Vasudevan, Rama K. Tselev, Alexander; Baddorf, Arthur P.; Gianfrancesco, Anthony G.

    2015-04-06

    The doped manganese oxides (manganites) have been widely studied for their colossal magnetoresistive effects, for potential applications in oxide spintronics, electroforming in resistive switching devices, and are materials of choice as cathodes in modern solid oxide fuel cells. However, little experimental knowledge of the dynamics of the surfaces of perovskite manganites at the atomic scale exists. Here, through in-situ scanning tunneling microscopy (STM), we demonstrate atomic resolution on samples of La{sub 0.625}Ca{sub 0.375}MnO{sub 3} grown on (001) SrTiO{sub 3} by pulsed laser deposition. Furthermore, by applying triangular DC waveforms of increasing amplitude to the STM tip, and measuring the tunneling current, we demonstrate the ability to both perform and monitor surface electrochemical processes at the atomic level, including formation of oxygen vacancies and removal and deposition of individual atomic units or clusters. Our work paves the way for better understanding of surface oxygen reactions in these systems.

  7. Atomic magnetometer

    DOE Patents [OSTI]

    Schwindt, Peter; Johnson, Cort N.

    2012-07-03

    An atomic magnetometer is disclosed which uses a pump light beam at a D1 or D2 transition of an alkali metal vapor to magnetically polarize the vapor in a heated cell, and a probe light beam at a different D2 or D1 transition to sense the magnetic field via a polarization rotation of the probe light beam. The pump and probe light beams are both directed along substantially the same optical path through an optical waveplate and through the heated cell to an optical filter which blocks the pump light beam while transmitting the probe light beam to one or more photodetectors which generate electrical signals to sense the magnetic field. The optical waveplate functions as a quarter waveplate to circularly polarize the pump light beam, and as a half waveplate to maintain the probe light beam linearly polarized.

  8. Island Wide Management Corporation

    Office of Legacy Management (LM)

    9 1986 Island Wide Management Corporation 3000 Marcus Avenue Lake Success, New York 11042 Dear Sir or Madam: I am sending you this letter and the enclosed information as you have been identified by L. I. Trinin of Glick Construction Company as the representatives of the owners of the property that was formerly the site of the Sylvania-Corning Nuclear Corporation in Bayside, New York. The Department of Energy is evaluating the radiological condition of sites that were utilized under the Manhattan

  9. Atomic Chemistry in Turbulent Media I: Effect of Atomic Cooling...

    Office of Scientific and Technical Information (OSTI)

    Atomic Chemistry in Turbulent Media I: Effect of Atomic Cooling Citation Details In-Document Search Title: Atomic Chemistry in Turbulent Media I: Effect of Atomic Cooling Authors: ...

  10. Atom Trajectory Viewer

    Energy Science and Technology Software Center (OSTI)

    2015-12-28

    Atom Trajectory Viewer is a visualization tool developed to enable interactive exploration of atomic trajectories and corresponding statistics in molecular dynamics.

  11. Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

    SciTech Connect (OSTI)

    Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A.; Hollaender, B.; Heuken, M.

    2012-11-01

    Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

  12. Modifications of the cell wall of yeasts grown on hexadecane...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Modifications of the cell wall of yeasts grown on hexadecane and under starvation conditions Title Modifications of the cell wall of yeasts grown on hexadecane and under starvation...

  13. Atomizing nozzle and process

    DOE Patents [OSTI]

    Anderson, Iver E.; Figliola, Richard S.; Molnar, Holly M.

    1993-07-20

    High pressure atomizing nozzle includes a high pressure gas manifold having a divergent expansion chamber between a gas inlet and arcuate manifold segment to minimize standing shock wave patterns in the manifold and thereby improve filling of the manifold with high pressure gas for improved melt atomization. The atomizing nozzle is especially useful in atomizing rare earth-transition metal alloys to form fine powder particles wherein a majority of the powder particles exhibit particle sizes having near-optimum magnetic properties.

  14. Atomizing nozzle and process

    DOE Patents [OSTI]

    Anderson, Iver E.; Figliola, Richard S.; Molnar, Holly M.

    1992-06-30

    High pressure atomizing nozzle includes a high pressure gas manifold having a divergent expansion chamber between a gas inlet and arcuate manifold segment to minimize standing shock wave patterns in the manifold and thereby improve filling of the manifold with high pressure gas for improved melt atomization. The atomizing nozzle is especially useful in atomizing rare earth-transition metal alloys to form fine powder particles wherein a majority of the powder particles exhibit particle sizes having near-optimum magnetic properties.

  15. Atomic Energy Commission Takes Over Responsibility for all Atomic...

    National Nuclear Security Administration (NNSA)

    Takes Over Responsibility for all Atomic Energy Programs Atomic Energy Commission Takes Over Responsibility for all Atomic Energy Program Washington, DC In accordance with the ...

  16. Nucleation and growth dynamics of MBE-grown topological insulator Bi{sub 2}Te{sub 3} films on Si (111)

    SciTech Connect (OSTI)

    Borisova, Svetlana; Krumrain, Julian; Mussler, Gregor; Grützmacher, Detlev; Luysberg, Martina

    2013-12-04

    Topological insulator Bi{sub 2}Te{sub 3} films have been grown by molecular beam epitaxy on Si (111) substrates. The structural properties of the ultra-thin films and their evolution in morphology during the growth have been investigated. The growth starts by a nucleation of separate islands and subsequently turns into a layer-by-layer growth mode. Despite this, the grown film is found to be single crystalline and fully relaxed from the first atomic layer.

  17. Atomic Energy Commission : Atomic Power at Shippingport - 1958 Educational Film

    SciTech Connect (OSTI)

    2013-02-02

    The United States Atomic Energy Commission & Westinghouse Electric Company take us on a tour of an atomic power station.

  18. PARTICLE ACCELERATORS; 74 ATOMIC AND MOLECULAR PHYSICS; ATOMS...

    Office of Scientific and Technical Information (OSTI)

    74 ATOMIC AND MOLECULAR PHYSICS; ATOMS; ELECTRONS; HELIUM; LIGHT SOURCES; RADIATIONS; STORAGE RINGS; SYNCHROTRONS SYNCHROTRON RADIATION SYNCHROTRONLIGHT SOURCES QUANTUM CHAOS...

  19. Atomic Energy Commission : Atomic Power at Shippingport - 1958 Educational Film

    ScienceCinema (OSTI)

    None

    2014-07-31

    The United States Atomic Energy Commission & Westinghouse Electric Company take us on a tour of an atomic power station.

  20. Counting molecular-beam grown graphene layers

    SciTech Connect (OSTI)

    Plaut, Annette S.; Wurstbauer, Ulrich; Pinczuk, Aron; Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 ; Garcia, Jorge M.; Pfeiffer, Loren N.

    2013-06-17

    We have used the ratio of the integrated intensity of graphene's Raman G peak to that of the silicon substrate's first-order optical phonon peak, accurately to determine the number of graphene layers across our molecular-beam (MB) grown graphene films. We find that these results agree well both, with those from our own exfoliated single and few-layer graphene flakes, and with the results of Koh et al.[ACS Nano 5, 269 (2011)]. We hence distinguish regions of single-, bi-, tri-, four-layer, etc., graphene, consecutively, as we scan coarsely across our MB-grown graphene. This is the first, but crucial, step to being able to grow, by such molecular-beam-techniques, a specified number of large-area graphene layers, to order.

  1. Atomic Energy Commission Takes Over Responsibility for all Atomic Energy

    National Nuclear Security Administration (NNSA)

    Programs | National Nuclear Security Administration | (NNSA) Takes Over Responsibility for all Atomic Energy Programs Atomic Energy Commission Takes Over Responsibility for all Atomic Energy Program Washington, DC In accordance with the Atomic Energy Act of 1946, all atomic energy activities are transferred to the newly created Atomic Energy Commission

  2. Ferroelectric PLZT thick films grown by poly(1-vinylpyrrolidone...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    PLZT thick films grown by poly(1-vinylpyrrolidone-co-vinyl acetate) (PVPVA)-modified sol-gel process Title Ferroelectric PLZT thick films grown by poly(1-vinylpyrrolidone-co-vi...

  3. An Atomic-Level Understanding of Copper-Based Catalysts

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    An Atomic-Level Understanding of Copper-Based Catalysts Print Copper-based catalysts are widely used in chemical industries to convert water and carbon monoxide to hydrogen, carbon ...

  4. Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces

    DOE Patents [OSTI]

    Li, Qiming; Wang, George T

    2015-01-13

    A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.

  5. Metal atom oxidation laser

    DOE Patents [OSTI]

    Jensen, R.J.; Rice, W.W.; Beattie, W.H.

    1975-10-28

    A chemical laser which operates by formation of metal or carbon atoms and reaction of such atoms with a gaseous oxidizer in an optical resonant cavity is described. The lasing species are diatomic or polyatomic in nature and are readily produced by exchange or other abstraction reactions between the metal or carbon atoms and the oxidizer. The lasing molecules may be metal or carbon monohalides or monoxides. (auth)

  6. Metal atom oxidation laser

    DOE Patents [OSTI]

    Jensen, R.J.; Rice, W.W.; Beattie, W.H.

    1975-10-28

    A chemical laser which operates by formation of metal or carbon atoms and reaction of such atoms with a gaseous oxidizer in an optical resonant cavity is described. The lasing species are diatomic or polyatomic in nature and are readily produced by exchange or other abstraction reactions between the metal or carbon atoms and the oxidizer. The lasing molecules may be metal or carbon monohalides or monoxides.

  7. Improved graphite furnace atomizer

    DOE Patents [OSTI]

    Siemer, D.D.

    1983-05-18

    A graphite furnace atomizer for use in graphite furnace atomic absorption spectroscopy is described wherein the heating elements are affixed near the optical path and away from the point of sample deposition, so that when the sample is volatilized the spectroscopic temperature at the optical path is at least that of the volatilization temperature, whereby analyteconcomitant complex formation is advantageously reduced. The atomizer may be elongated along its axis to increase the distance between the optical path and the sample deposition point. Also, the atomizer may be elongated along the axis of the optical path, whereby its analytical sensitivity is greatly increased.

  8. The Harnessed Atom

    Broader source: Energy.gov [DOE]

    The Harnessed Atom is a new middle school science, technology, engineering, and math (STEM) curriculum extension that focuses on nuclear science and energy. It offers teachers accurate, unbiased,...

  9. Carbon nanotube forests growth using catalysts from atomic layer deposition

    SciTech Connect (OSTI)

    Chen, Bingan; Zhang, Can; Esconjauregui, Santiago; Xie, Rongsi; Zhong, Guofang; Robertson, John; Bhardwaj, Sunil; Cepek, Cinzia

    2014-04-14

    We have grown carbon nanotubes using Fe and Ni catalyst films deposited by atomic layer deposition. Both metals lead to catalytically active nanoparticles for growing vertically aligned nanotube forests or carbon fibres, depending on the growth conditions and whether the substrate is alumina or silica. The resulting nanotubes have narrow diameter and wall number distributions that are as narrow as those grown from sputtered catalysts. The state of the catalyst is studied by in-situ and ex-situ X-ray photoemission spectroscopy. We demonstrate multi-directional nanotube growth on a porous alumina foam coated with Fe prepared by atomic layer deposition. This deposition technique can be useful for nanotube applications in microelectronics, filter technology, and energy storage.

  10. Design of step composition gradient thin film transistor channel layers grown by atomic layer deposition

    SciTech Connect (OSTI)

    Ahn, Cheol Hyoun; Hee Kim, So; Gu Yun, Myeong; Koun Cho, Hyung

    2014-12-01

    In this study, we proposed the artificially designed channel structure in oxide thin-film transistors (TFTs) called a “step-composition gradient channel.” We demonstrated Al step-composition gradient Al-Zn-O (AZO) channel structures consisting of three AZO layers with different Al contents. The effects of stacking sequence in the step-composition gradient channel on performance and electrical stability of bottom-gate TFT devices were investigated with two channels of inverse stacking order (ascending/descending step-composition). The TFT with ascending step-composition channel structure (5 → 10 → 14 at. % Al composition) showed relatively negative threshold voltage (−3.7 V) and good instability characteristics with a reduced threshold voltage shift (Δ 1.4 V), which was related to the alignment of the conduction band off-set within the channel layer depending on the Al contents. Finally, the reduced Al composition in the initial layer of ascending step-composition channel resulted in the best field effect mobility of 4.5 cm{sup 2}/V s. We presented a unique active layer of the “step-composition gradient channel” in the oxide TFTs and explained the mechanism of adequate channel design.

  11. Atomic moments in Mn{sub 2}CoAl thin films analyzed by X-ray magnetic circular dichroism

    SciTech Connect (OSTI)

    Jamer, M. E.; Assaf, B. A.; Heiman, D.; Sterbinsky, G. E.; Arena, D. A.

    2014-12-07

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn{sub 2}CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. The results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value.

  12. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; Arena, D. A.; Heiman, D.

    2014-12-05

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. Results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value.

  13. Modified Embedded Atom Method

    Energy Science and Technology Software Center (OSTI)

    2012-08-01

    Interatomic force and energy calculation subroutine to be used with the molecular dynamics simulation code LAMMPS (Ref a.). The code evaluated the total energy and atomic forces (energy gradient) according to a cubic spline-based variant (Ref b.) of the Modified Embedded Atom Method (MEAM) with a additional Stillinger-Weber (SW) contribution.

  14. Fidelity imaging for atomic force microscopy

    SciTech Connect (OSTI)

    Ghosal, Sayan Salapaka, Murti

    2015-01-05

    Atomic force microscopy is widely employed for imaging material at the nanoscale. However, real-time measures on image reliability are lacking in contemporary atomic force microscopy literature. In this article, we present a real-time technique that provides an image of fidelity for a high bandwidth dynamic mode imaging scheme. The fidelity images define channels that allow the user to have additional authority over the choice of decision threshold that facilitates where the emphasis is desired, on discovering most true features on the sample with the possible detection of high number of false features, or emphasizing minimizing instances of false detections. Simulation and experimental results demonstrate the effectiveness of fidelity imaging.

  15. Magnetization dynamics of cobalt grown on graphene

    SciTech Connect (OSTI)

    Berger, A. J.; White, S. P.; Adur, R.; Pu, Y.; Hammel, P. C.; Amamou, W.; Kawakami, R. K.

    2014-05-07

    Ferromagnetic resonance (FMR) spin pumping is a rapidly growing field which has demonstrated promising results in a variety of material systems. This technique utilizes the resonant precession of magnetization in a ferromagnet to inject spin into an adjacent non-magnetic material. Spin pumping into graphene is attractive on account of its exceptional spin transport properties. This article reports on FMR characterization of cobalt grown on chemical vapor deposition graphene and examines the validity of linewidth broadening as an indicator of spin pumping. In comparison to cobalt samples without graphene, direct contact cobalt-on-graphene exhibits increased FMR linewidthan often used signature of spin pumping. Similar results are obtained in Co/MgO/graphene structures, where a 1?nm MgO layer acts as a tunnel barrier. However, magnetometry, magnetic force microscopy, and Kerr microscopy measurements demonstrate increased magnetic disorder in cobalt grown on graphene, perhaps due to changes in the growth process and an increase in defects. This magnetic disorder may account for the observed linewidth enhancement due to effects such as two-magnon scattering or mosaicity. As such, it is not possible to conclude successful spin injection into graphene from FMR linewidth measurements alone.

  16. Analytical evaluation of atomic form factors: Application to Rayleigh scattering

    SciTech Connect (OSTI)

    Safari, L.; Santos, J. P.; Amaro, P.; Jnkl, K.; Fratini, F.

    2015-05-15

    Atomic form factors are widely used for the characterization of targets and specimens, from crystallography to biology. By using recent mathematical results, here we derive an analytical expression for the atomic form factor within the independent particle model constructed from nonrelativistic screened hydrogenic wave functions. The range of validity of this analytical expression is checked by comparing the analytically obtained form factors with the ones obtained within the Hartee-Fock method. As an example, we apply our analytical expression for the atomic form factor to evaluate the differential cross section for Rayleigh scattering off neutral atoms.

  17. Wide field of view telescope

    DOE Patents [OSTI]

    Ackermann, Mark R.; McGraw, John T.; Zimmer, Peter C.

    2008-01-15

    A wide field of view telescope having two concave and two convex reflective surfaces, each with an aspheric surface contour, has a flat focal plane array. Each of the primary, secondary, tertiary, and quaternary reflective surfaces are rotationally symmetric about the optical axis. The combination of the reflective surfaces results in a wide field of view in the range of approximately 3.8.degree. to approximately 6.5.degree.. The length of the telescope along the optical axis is approximately equal to or less than the diameter of the largest of the reflective surfaces.

  18. Orientation epitaxy of Ge1–xSnx films grown on single crystal CaF2 substrates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    A. J. Littlejohn; Zhang, L. H.; Lu, T. -M.; Kisslinger, K.; and Wang, G. -C.

    2016-03-15

    Ge1–xSnx films were grown via physical vapor deposition below the crystallization temperature of Ge on single crystal (111) and (100) CaF2 substrates to assess the role of Sn alloying in Ge crystallization. By studying samples grown at several growth temperatures ranging from 250 °C to 400 °C we report temperature-dependent trends in several of the films' properties. X-ray diffraction theta vs. two-theta (θ/2θ) scans indicate single orientation Ge1–xSnx(111) films are grown on CaF2(111) substrates at each temperature, while a temperature-dependent superposition of (111) and (100) orientations are exhibited in films grown on CaF2(100) above 250 °C. This is the firstmore » report of (111) oriented Ge1–xSnx grown on a (100) oriented CaF2 substrate, which is successfully predicted by a superlattice area matching model. These results are confirmed by X-ray diffraction pole figure analysis. θ/2θ results indicate substitutional Sn alloying in each film of about 5%, corroborated by energy dispersive spectroscopy. In addition, morphological and electrical properties are measured by scanning electron microscopy, atomic force microscopy and Hall mobility measurements and are also shown to be dependent upon growth temperature.« less

  19. Going Deep vs. Going Wide

    Broader source: Energy.gov [DOE]

    Going Deep vs. Going Wide, from the Residential Energy Efficiency Solutions Conference 2012. Provides an overview on the progress of four energy efficiency programs: Clean Energy Works Oregon, Efficiency Maine, Energy Upgrade California Flex Path, and EcoHouse Loan Program.

  20. CNEEC - Atomic Layer Deposition Tutorial by Stacey Bent

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic Layer Deposition

  1. Atomizing nozzle and method

    DOE Patents [OSTI]

    Ting, Jason (Ames, IA); Anderson, Iver E. (Ames, IA); Terpstra, Robert L. (Ames, IA)

    2000-03-16

    A high pressure close-coupled gas atomizing nozzle includes multiple discrete gas jet discharge orifices having aerodynamically designed convergent-divergent geometry with an first converging section communicated to a gas supply manifold and to a diverging section by a constricted throat section to increase atomizing gas velocity. The gas jet orifices are oriented at gas jet apex angle selected relative to the melt supply tip apex angle to establish a melt aspiration condition at the melt supply tip.

  2. Optical atomic magnetometer

    DOE Patents [OSTI]

    Budker, Dmitry; Higbie, James; Corsini, Eric P

    2013-11-19

    An optical atomic magnetometers is provided operating on the principles of nonlinear magneto-optical rotation. An atomic vapor is optically pumped using linearly polarized modulated light. The vapor is then probed using a non-modulated linearly polarized light beam. The resulting modulation in polarization angle of the probe light is detected and used in a feedback loop to induce self-oscillation at the resonant frequency.

  3. Metal atomization spray nozzle

    DOE Patents [OSTI]

    Huxford, T.J.

    1993-11-16

    A spray nozzle for a magnetohydrodynamic atomization apparatus has a feed passage for molten metal and a pair of spray electrodes mounted in the feed passage. The electrodes, diverging surfaces which define a nozzle throat and diverge at an acute angle from the throat. Current passes through molten metal when fed through the throat which creates the Lorentz force necessary to provide atomization of the molten metal. 6 figures.

  4. Metal atomization spray nozzle

    DOE Patents [OSTI]

    Huxford, Theodore J.

    1993-01-01

    A spray nozzle for a magnetohydrodynamic atomization apparatus has a feed passage for molten metal and a pair of spray electrodes mounted in the feed passage. The electrodes, diverging surfaces which define a nozzle throat and diverge at an acute angle from the throat. Current passes through molten metal when fed through the throat which creates the Lorentz force necessary to provide atomization of the molten metal.

  5. Hard probes of strongly-interacting atomic gases

    SciTech Connect (OSTI)

    Nishida, Yusuke

    2012-06-18

    We investigate properties of an energetic atom propagating through strongly interacting atomic gases. The operator product expansion is used to systematically compute a quasiparticle energy and its scattering rate both in a spin-1/2 Fermi gas and in a spinless Bose gas. Reasonable agreement with recent quantum Monte Carlo simulations even at a relatively small momentum k/kF > 1.5 indicates that our large-momentum expansions are valid in a wide range of momentum. We also study a differential scattering rate when a probe atom is shot into atomic gases. Because the number density and current density of the target atomic gas contribute to the forward scattering only, its contact density (measure of short-range pair correlation) gives the leading contribution to the backward scattering. Therefore, such an experiment can be used to measure the contact density and thus provides a new local probe of strongly interacting atomic gases.

  6. Wide Bandgap Semiconductors | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Wide Bandgap Semiconductors Wide Bandgap Semiconductors Addthis Duration 1:55 Topic Energy Sector Jobs Manufacturing Transmission Innovation

  7. Electronic and mechanical properties of graphene-germanium interfaces grown by chemical vapor deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kiraly, Brian T.; Jacobberger, Robert M.; Mannix, Andrew J.; Campbell, Gavin P.; Bedzyk, Michael J.; Arnold, Michael S.; Hersam, Mark C.; Guisinger, Nathan P.

    2015-10-27

    Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates is of high interest for both fundamental science and electronic device applications. To date, however, this material system remains relatively unexplored structurally and electronically, particularly at the atomic scale. To further understand the nature of the interface between graphene and Ge, we utilize ultrahigh vacuum scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) along with Raman and X-ray photoelectron spectroscopy to probe interfacial atomic structure and chemistry. STS reveals significant differences in electronic interactions between graphene and Ge(110)/Ge(111), which is consistent with a model of stronger interaction on Ge(110)more » leading to epitaxial growth. Raman spectra indicate that the graphene is considerably strained after growth, with more point-to-point variation on Ge(111). Furthermore, this native strain influences the atomic structure of the interface by inducing metastable and previously unobserved Ge surface reconstructions following annealing. These nonequilibrium reconstructions cover >90% of the surface and, in turn, modify both the electronic and mechanical properties of the graphene overlayer. Finally, graphene on Ge(001) represents the extreme strain case, where graphene drives the reorganization of the Ge surface into [107] facets. From this study, it is clear that the interaction between graphene and the underlying Ge is not only dependent on the substrate crystallographic orientation, but is also tunable and strongly related to the atomic reconfiguration of the graphene–Ge interface.« less

  8. Laser Focus World highlights Kaminski's home-grown ARPES spectroscopy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser Focus World highlights Kaminski's home-grown ARPES spectroscopy system Laser Focus World senior editor Gail Overton wrote a story on angled-resolved photo-emission...

  9. Wide Bandgap Extrinsic Photoconductive Switches

    SciTech Connect (OSTI)

    Sullivan, J S

    2012-01-17

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  10. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  11. The Harnessed Atom | Department of Energy

    Office of Environmental Management (EM)

    The Harnessed Atom The Harnessed Atom The Harnessed Atom The Harnessed Atom is a new middle school science, technology, engineering, and math (STEM) curriculum extension...

  12. Atomic vapor laser isotope separation

    SciTech Connect (OSTI)

    Stern, R.C.; Paisner, J.A.

    1986-08-15

    The atomic vapor laser isotope separation (AVLIS) process for the enrichment of uranium is evaluated. (AIP)

  13. Iowa Powder Atomization Technologies

    SciTech Connect (OSTI)

    2012-01-01

    The same atomization effect seen in a fuel injector is being applied to titanium metal resulting in fine titanium powders that are less than half the width of a human hair. Titanium melts above 3,000°F and is highly corrosive therefore requiring specialized containers. The liquid titanium is poured through an Ames Laboratory - USDOE patented tube which is intended to increase the energy efficiency of the atomization process, which has the ability to dramatically decrease the cost of fine titanium powders. This novel process could open markets for green manufacturing of titanium components from jet engines to biomedical implants.

  14. Atomic Force Microscope

    SciTech Connect (OSTI)

    Day, R.D.; Russell, P.E.

    1988-12-01

    The Atomic Force Microscope (AFM) is a recently developed instrument that has achieved atomic resolution imaging of both conducting and non- conducting surfaces. Because the AFM is in the early stages of development, and because of the difficulty of building the instrument, it is currently in use in fewer than ten laboratories worldwide. It promises to be a valuable tool for obtaining information about engineering surfaces and aiding the .study of precision fabrication processes. This paper gives an overview of AFM technology and presents plans to build an instrument designed to look at engineering surfaces.

  15. Iowa Powder Atomization Technologies

    ScienceCinema (OSTI)

    None

    2013-03-01

    The same atomization effect seen in a fuel injector is being applied to titanium metal resulting in fine titanium powders that are less than half the width of a human hair. Titanium melts above 3,000°F and is highly corrosive therefore requiring specialized containers. The liquid titanium is poured through an Ames Laboratory - USDOE patented tube which is intended to increase the energy efficiency of the atomization process, which has the ability to dramatically decrease the cost of fine titanium powders. This novel process could open markets for green manufacturing of titanium components from jet engines to biomedical implants.

  16. Wide-range voltage modulation

    SciTech Connect (OSTI)

    Rust, K.R.; Wilson, J.M.

    1992-06-01

    The Superconducting Super Collider`s Medium Energy Booster Abort (MEBA) kicker modulator will supply a current pulse to the abort magnets which deflect the proton beam from the MEB ring into a designated beam stop. The abort kicker will be used extensively during testing of the Low Energy Booster (LEB) and the MEB rings. When the Collider is in full operation, the MEBA kicker modulator will abort the MEB beam in the event of a malfunction during the filling process. The modulator must generate a 14-{mu}s wide pulse with a rise time of less than 1 {mu}s, including the delay and jitter times. It must also be able to deliver a current pulse to the magnet proportional to the beam energy at any time during ramp-up of the accelerator. Tracking the beam energy, which increases from 12 GeV at injection to 200 GeV at extraction, requires the modulator to operate over a wide range of voltages (4 kV to 80 kV). A vacuum spark gap and a thyratron have been chosen for test and evaluation as candidate switches for the abort modulator. Modulator design, switching time delay, jitter and pre-fire data are presented.

  17. INL Laboratory Scale Atomizer

    SciTech Connect (OSTI)

    C.R. Clark; G.C. Knighton; R.S. Fielding; N.P. Hallinan

    2010-01-01

    A laboratory scale atomizer has been built at the Idaho National Laboratory. This has proven useful for laboratory scale tests and has been used to fabricate fuel used in the RERTR miniplate experiments. This instrument evolved over time with various improvements being made ‘on the fly’ in a trial and error process.

  18. NNSA Awards Mo-99 Cooperative Agreement to General Atomics | National

    National Nuclear Security Administration (NNSA)

    Nuclear Security Administration | (NNSA) Awards Mo-99 Cooperative Agreement to General Atomics September 30, 2015 WASHINGTON, DC - Today, the Department of Energy's National Nuclear Security Administration (DOE/NNSA) announced that it will award a cooperative agreement to General Atomics (GA) to support its project for domestic production of molybdenum-99 (Mo-99) without highly enriched uranium (HEU). Mo-99 is the parent isotope of technetium-99m, which is the most widely used radioisotope

  19. An Atomic-Level Understanding of Copper-Based Catalysts

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    An Atomic-Level Understanding of Copper-Based Catalysts Print Copper-based catalysts are widely used in chemical industries to convert water and carbon monoxide to hydrogen, carbon dioxide, and methanol. There are theoretical models used to explain this reaction, but a complete understanding of the process has been lacking. However, recent research at the ALS has shed light on the process, giving scientists key data about how copper-based catalysts function at the atomic level. These catalysts

  20. Katharine Page: Atomic-level insights for better materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Katharine Page: Atomic-level insights for better materials Alumni Link: Opportunities, News and Resources for Former Employees Latest Issue:September 2015 all issues All Issues » submit Katharine Page: Atomic-level insights for better materials Page's research supports materials' advances that could have wide-ranging impact, investigating, manipulating and manufacturing nano-particles. May 1, 2014 Katherine Page Katherine Page Contact Linda Anderman Email A Love for Science Impassioned by

  1. An Atomic-Level Understanding of Copper-Based Catalysts

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    An Atomic-Level Understanding of Copper-Based Catalysts Print Copper-based catalysts are widely used in chemical industries to convert water and carbon monoxide to hydrogen, carbon dioxide, and methanol. There are theoretical models used to explain this reaction, but a complete understanding of the process has been lacking. However, recent research at the ALS has shed light on the process, giving scientists key data about how copper-based catalysts function at the atomic level. These catalysts

  2. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    SciTech Connect (OSTI)

    Jamer, M.; Sterbinsky, G.; Assaf, B.; Arena, D.; Heiman, D.

    2014-12-05

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. The results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value. (auth)

  3. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    SciTech Connect (OSTI)

    Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; Arena, D. A.; Heiman, D.

    2014-12-05

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. Results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value.

  4. Ultracold Atoms: How Quantum Field Theory Invaded Atomic Physics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ultracold Atoms: How Quantum Field Theory Invaded Atomic Physics Eric Braaten Ohio State University May 6, 2015 4:00 p.m. (coffee @ 3:30) The development of the technology for trapping atoms and cooling them to ultralow temperatures gave birth to a new subfield of atomic physics. It also led to the introduction of new theoretical methods into atomic physics, I n particular quantum field theory (QFT). Methods of QFT developed in high energy physics have proved to be very useful in ultracold atom

  5. Isotropically sensitive optical filter employing atomic resonance transitions

    DOE Patents [OSTI]

    Marling, John B.

    1981-01-01

    An ultra-high Q isotropically sensitive optical filter or optical detector employing atomic resonance transitions. More specifically, atomic resonance transitions utilized in conjunction with two optical bandpass filters provide an optical detector having a wide field of view (.about.2.pi. steradians) and very narrow acceptance bandwidth approaching 0.01 A. A light signal to be detected is transmitted through an outer bandpass filter into a resonantly absorbing atomic vapor, the excited atomic vapor then providing a fluorescence signal at a different wavelength which is transmitted through an inner bandpass filter. The outer and inner bandpass filters have no common transmission band, thereby resulting in complete blockage of all optical signals that are not resonantly shifted in wavelength by the intervening atomic vapor. Two embodiments are disclosed, one in which the light signal raises atoms contained in the atomic vapor from the ground state to an excited state from which fluorescence occurs, and the other in which a pump laser is used to raise the atoms in the ground state to a first excited state from which the light signal then is resonantly absorbed, thereby raising the atoms to a second excited state from which fluorescence occurs. A specific application is described in which an optical detector according to the present invention can be used as an underwater detector for light from an optical transmitter which could be located in an orbiting satellite.

  6. Isotropically sensitive optical filter employing atomic resonance transitions

    DOE Patents [OSTI]

    Marling, J.B.

    An ultra-high Q isotropically sensitive optical filter or optical detector is disclosed employing atomic resonance transitions. More specifically, atomic resonance transitions utilized in conjunction with two optical bandpass filters provide an optical detector having a wide field of view (approx. 2 ..pi.. steradians) and very narrow acceptance bandwidth approaching 0.01A. A light signal to be detected is transmitted through an outer bandpass filter into a resonantly absorbing atomic vapor, the excited atomic vapor than providing a fluorescence signal at a different wavelength which is transmitted through an inner bandpass filters have no common transmission band, therby resulting in complete blockage of all optical signals that are not resonantly shifted in wavelength by the intervening atomic vapor. Two embodiments are disclosed, one in which the light signal raises atoms contained in the atomic vapor from the ground state to an excited state from which fluorescence occurs, and the other in which a pump laser is used to raise the atoms in the ground state to a first excited state from which the light signal then is resonantly absorbed, thereby raising the atoms to a second excited state from which fluorescence occurs. A specific application is described in which an optical detector according to the present invention can be located in an orbiting satellite.

  7. Hanford Site Wide Programs - Hanford Site

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Page | Print Print Page |Text Increase Font Size Decrease Font Size Hanford Site-Wide Programs Hanford Safety and Health Hanford Site Wide Programs Hanford Fire Department...

  8. Interconnection-Wide Transmission Planning Initiative - Meeting...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Interconnection-Wide Transmission Planning Initiative - Meeting Calendars Interconnection-Wide Transmission Planning Initiative - Meeting Calendars Click on the links below to ...

  9. Wide area continuous offender monitoring

    SciTech Connect (OSTI)

    Hoshen, J.; Drake, G.; Spencer, D.

    1996-11-01

    The corrections system in the U.S. is supervising over five million offenders. This number is rising fast and so are the direct and indirect costs to society. To improve supervision and reduce the cost of parole and probation, first generation home arrest systems were introduced in 1987. While these systems proved to be helpful to the corrections system, their scope is rather limited because they only cover an offender at a single location and provide only a partial time coverage. To correct the limitations of first-generation systems, second-generation wide area continuous electronic offender monitoring systems, designed to monitor the offender at all times and locations, are now on the drawing board. These systems use radio frequency location technology to track the position of offenders. The challenge for this technology is the development of reliable personal locator devices that are small, lightweight, with long operational battery life, and indoors/outdoors accuracy of 100 meters or less. At the center of a second-generation system is a database that specifies the offender`s home, workplace, commute, and time the offender should be found in each. The database could also define areas from which the offender is excluded. To test compliance, the system would compare the observed coordinates of the offender with the stored location for a given time interval. Database logfiles will also enable law enforcement to determine if a monitored offender was present at a crime scene and thus include or exclude the offender as a potential suspect.

  10. Lawrenciums ionization potential, atom by atom

    SciTech Connect (OSTI)

    Miller, Johanna L.

    2015-06-15

    Researchers in Japan have begun probing the atomic physics of elements that can be produced only in minute quantities.

  11. Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Li, H.; Daniels-Race, T.; Wang, Z.

    1999-03-01

    Growth mode and strain relaxation of molecular-beam-epitaxy grown InAs/InAlAs/InP (111)A system have been investigated using reflection high-energy electron diffraction, transmission electron microscopy, atomic force microscopy, and photoluminescence measurements. In direct contrast to the well-studied InAs/GaAs system, our experimental results show that the InAs grown on InAlAs/InP (111)A follows the Stranski{endash}Krastanov mode. Both self-organized InAs quantum dots and relaxed InAs islands are formed depending on the InAs coverage. Intense luminescence signals from both the InAs quantum dots and wetting layer are observed. The luminescence efficiency of (111)A samples is comparable to that of (001) samples, suggesting the feasibility of fabricating quantum dot optoelectronic devices on InP (111)A surfaces. {copyright} {ital 1999 American Institute of Physics.}

  12. A microfabricated atomic clock

    SciTech Connect (OSTI)

    Knappe, Svenja; Shah, Vishal; Schwindt, Peter D.D.; Hollberg, Leo; Kitching, John; Liew, Li-Anne; Moreland, John

    2004-08-30

    Fabrication techniques usually applied to microelectromechanical systems (MEMS) are used to reduce the size and operating power of the core physics assembly of an atomic clock. With a volume of 9.5 mm{sup 3}, a fractional frequency instability of 2.5x10{sup -10} at 1 s of integration, and dissipating less than 75 mW of power, the device has the potential to bring atomically precise timing to hand-held, battery-operated devices. In addition, the design and fabrication process allows for wafer-level assembly of the structures, enabling low-cost mass-production of thousands of identical units with the same process sequence, and easy integration with other electronics.

  13. 3-D Atomic-Scale Mapping of Manganese Dopants in Lead Sulfide Nanowires

    SciTech Connect (OSTI)

    Isheim, Dieter; Kaszpurenko, Jason; Yu, Dong; Mao, Zugang; Seidman, David N.; Arslan, Ilke

    2012-03-22

    Dopants in nanowires, whether intentional or unintentional, can ultimately control the material's properties and therefore need to be understood on the atomic scale. We study vapor-liquid-solid grown manganese-doped lead sulfide nanowires by atom-probe tomography for the first time for lead salt materials. The three-dimensional chemical concentration maps at the atomic scale demonstrate a radial distribution profile of Mn ions, with a concentration of only 0.18 at.% and 0.01 at.% for MnCl2 and Mn-acetate precursors, respectively. The ability to characterize these small concentrations of dopant atoms in Pb1-xMnxS nanowires (x = 0.0036 and 0.0002), important for spintronic and thermoelectric devices, sets a platform for similar analyses for all nanostructures. First-principles calculations confirm that Mn atoms substitute for Pb in the PbS structure.

  14. ATOMIC ENERGY COMMISSION

    Office of Legacy Management (LM)

    ' ATOMIC ENERGY COMMISSION Frank K. Pittman, Director, bivisioa of Waste &&gement and s- portation, Headquarters j CONTAMItUTED RX-AEC-OWNED OR LEASED FACILITIES' This memorandum responds to your TWX certain information on the above subject. the documentation necessary to answer your available due to the records disposal vailing at the time of release or From records that are available and from disc&ions with most familiar with the transfer operations, &have the current

  15. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

    SciTech Connect (OSTI)

    Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne

    2016-01-01

    High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

  16. Nanotransfer and nanoreplication using deterministically grown sacrificial nanotemplates

    DOE Patents [OSTI]

    Melechko, Anatoli V.; McKnight, Timothy E.; Guillorn, Michael A.; Ilic, Bojan; Merkulov, Vladimir I.; Doktycz, Mitchel J.; Lowndes, Douglas H.; Simpson, Michael L.

    2011-08-23

    Methods, manufactures, machines and compositions are described for nanotransfer and nanoreplication using deterministically grown sacrificial nanotemplates. An apparatus, includes a substrate and a nanoreplicant structure coupled to a surface of the substrate.

  17. Chiral meta-atoms rotated by light

    SciTech Connect (OSTI)

    Liu Mingkai; Powell, David A.; Shadrivov, Ilya V.

    2012-07-16

    We study the opto-mechanical properties of coupled chiral meta-atoms based on a pair of twisted split-ring resonators. By using a simple analytical model in conjunction with the Maxwell stress tensor, we capture insight into the mechanism and find that this structure can be used as a general prototype of subwavelength light-driven actuators over a wide range of frequencies. This coupled structure can provide a strong and tunable torque, and can support different opto-mechanical modes, including uniform rotation, periodically variable rotation and damped oscillations. Our results suggest that chiral meta-atoms are good candidates for creating sub-wavelength motors or wrenches controlled by light.

  18. Plant-wide Systems | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Plant-wide Systems Plant-wide Systems Improving the energy efficiency of plant-wide systems can lead to significant savings. Use the software tools, training, and publications listed below to improve performance and save energy. Plant Wide Tools Tools to manage energy DOE eGuide for ISO 50001 DOE eGuide Lite Energy Performance Indicator Plant-Wide Case Studies Alcoa: C-Suite Participation in Energy Efficiency Increases Accountability and Staff Engagement Throughout the Organization Success

  19. Budget Atomization | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Budget Atomization Budget Atomization Howard Dickenson, Deputy Associate Administrator for Acquisition and Project Management presented on Budget Atomization from the NNSA perspective. Howard presented an overview of the NNSA budget structure and an example of LANL controls. Chris Johns, Director of the Budget Office, DOE Office of the CFO presented on Budget Atomization from the DOE perspective. Chris provided an overview of funding, provided examples, and demonstrated the effect on labs/sites.

  20. An Atom-Wide Antennae Created from Difference-Making Defects...

    Energy Savers [EERE]

    ... Researchers are investigating how this might be done in the developing field of silicon photonics, and ORNL's new finding may be important in advancing the field. ORNL's results ...

  1. Atomizer with liquid spray quenching

    DOE Patents [OSTI]

    Anderson, I.E.; Osborne, M.G.; Terpstra, R.L.

    1998-04-14

    Method and apparatus are disclosed for making metallic powder particles wherein a metallic melt is atomized by a rotating disk or other atomizer at an atomizing location in a manner to form molten droplets moving in a direction away from said atomizing location. The atomized droplets pass through a series of thin liquid quenching sheets disposed in succession about the atomizing location with each successive quenching sheet being at an increasing distance from the atomizing location. The atomized droplets are incrementally cooled and optionally passivated as they pass through the series of liquid quenching sheets without distorting the atomized droplets from their generally spherical shape. The atomized, cooled droplets can be received in a chamber having a collection wall disposed outwardly of the series of liquid quenching sheets. A liquid quenchant can be flowed proximate the chamber wall to carry the cooled atomized droplets to a collection chamber where atomized powder particles and the liquid quenchant are separated such that the liquid quenchant can be recycled. 6 figs.

  2. Atomizer with liquid spray quenching

    DOE Patents [OSTI]

    Anderson, Iver E.; Osborne, Matthew G.; Terpstra, Robert L.

    1998-04-14

    Method and apparatus for making metallic powder particles wherein a metallic melt is atomized by a rotating disk or other atomizer at an atomizing location in a manner to form molten droplets moving in a direction away from said atomizing location. The atomized droplets pass through a series of thin liquid quenching sheets disposed in succession about the atomizing location with each successive quenching sheet being at an increasing distance from the atomizing location. The atomized droplets are incrementally cooled and optionally passivated as they pass through the series of liquid quenching sheets without distorting the atomized droplets from their generally spherical shape. The atomized, cooled droplets can be received in a chamber having a collection wall disposed outwardly of the series of liquid quenching sheets. A liquid quenchant can be flowed proximate the chamber wall to carry the cooled atomized droplets to a collection chamber where atomized powder particles and the liquid quenchant are separated such that the liquid quenchant can be recycled.

  3. Near-field microwave microscopy of high-? oxides grown on graphene with an organic seeding layer

    SciTech Connect (OSTI)

    Tselev, Alexander Kalinin, Sergei V.; Sangwan, Vinod K.; Jariwala, Deep; Lauhon, Lincoln J.; Marks, Tobin J.; Hersam, Mark C.; Department of Chemistry, Northwestern University, Evanston, Illinois 60208

    2013-12-09

    Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al{sub 2}O{sub 3} and HfO{sub 2} films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100?nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al{sub 2}O{sub 3}/HfO{sub 2} stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film.

  4. Structures of 38-atom gold-platinum nanoalloy clusters

    SciTech Connect (OSTI)

    Ong, Yee Pin; Yoon, Tiem Leong; Lim, Thong Leng

    2015-04-24

    Bimetallic nanoclusters, such as gold-platinum nanoclusters, are nanomaterials promising wide range of applications. We perform a numerical study of 38-atom gold-platinum nanoalloy clusters, Au{sub n}Pt{sub 38−n} (0 ≤ n ≤ 38), to elucidate the geometrical structures of these clusters. The lowest-energy structures of these bimetallic nanoclusters at the semi-empirical level are obtained via a global-minimum search algorithm known as parallel tempering multi-canonical basin hopping plus genetic algorithm (PTMBHGA), in which empirical Gupta many-body potential is used to describe the inter-atomic interactions among the constituent atoms. The structures of gold-platinum nanoalloy clusters are predicted to be core-shell segregated nanoclusters. Gold atoms are observed to preferentially occupy the surface of the clusters, while platinum atoms tend to occupy the core due to the slightly smaller atomic radius of platinum as compared to gold’s. The evolution of the geometrical structure of 38-atom Au-Pt clusters displays striking similarity with that of 38-atom Au-Cu nanoalloy clusters as reported in the literature.

  5. DOE - NNSA/NFO -- Atomic Testing Museum

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    National Atomic Testing Museum NNSANFO Language Options U.S. DOENNSA - Nevada Field Office NATIONAL ATOMIC TESTING MUSEUM Photograph of Atomic Testing Museum The Nevada Test Site ...

  6. Atomic data for fusion

    SciTech Connect (OSTI)

    Hunter, H.T.; Kirkpatrick, M.I.; Alvarez, I.; Cisneros, C.; Phaneuf, R.A.; Barnett, C.F.

    1990-07-01

    This report provides a handbook of recommended cross-section and rate-coefficient data for inelastic collisions between hydrogen, helium and lithium atoms, molecules and ions, and encompasses more than 400 different reactions of primary interest in fusion research. Published experimental and theoretical data have been collected and evaluated, and the recommended data are presented in tabular, graphical and parametrized form. Processes include excitation and spectral line emission, charge exchange, ionization, stripping, dissociation and particle interchange reactions. The range of collision energies is appropriate to applications in fusion-energy research.

  7. Atomically resolved force microscopy at room temperature

    SciTech Connect (OSTI)

    Morita, Seizo

    2014-04-24

    Atomic force microscopy (AFM) can now not only image individual atoms but also construct atom letters using atom manipulation method even at room temperature (RT). Therefore, the AFM is the second generation atomic tool following the scanning tunneling microscopy (STM). However the AFM can image even insulating atoms, and also directly measure/map the atomic force and potential at the atomic scale. Noting these advantages, we have been developing a bottom-up nanostructuring system at RT based on the AFM. It can identify chemical species of individual atoms and then manipulate selected atom species to the predesigned site one-by-one to assemble complex nanostructures consisted of multi atom species at RT. Here we introduce our results toward atom-by-atom assembly of composite nanostructures based on the AFM at RT including the latest result on atom gating of nano-space for atom-by-atom creation of atom clusters at RT for semiconductor surfaces.

  8. The sticking of atomic hydrogen on amorphous water ice

    SciTech Connect (OSTI)

    Veeraghattam, Vijay K.; Manrodt, Katie; Lewis, Steven P.; Stancil, P. C. E-mail: lewis@physast.uga.edu

    2014-07-20

    Using classical molecular dynamics, we have simulated the sticking and scattering process of a hydrogen atom on an amorphous ice film to predict the sticking probability of hydrogen on ice surfaces. A wide range of initial kinetic energies of the incident hydrogen atom (10 K-600 K) and two different ice temperatures (10 K and 70 K) were used to investigate this fundamental process in interstellar chemistry. We report here the sticking probability of atomic hydrogen as a function of incident kinetic energy, gas temperature, and substrate temperature, which can be used in astrophysical models. The current results are compared to previous theoretical and experimental studies that have reported a wide range in the sticking coefficient.

  9. Enterprise-Wide Agreements | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Enterprise-Wide Agreements Enterprise-Wide Agreements hand-819279_960_720.jpg Enterprise-Wide Agreements The IT Acquisition: Enterprise-Wide Agreement (EWA) Program develops policies and procedures that support the identification, acquisition, oversight and compliance of enterprise licenses. The EWA Program's core objectives are to: Maximize IT buying power Reduce the total cost of ownership Streamline the IT total acquisition lifecycle The EWA Program employs a centralized, cross-functional,

  10. Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

    SciTech Connect (OSTI)

    Zhang, Yijun; Liu, Ming E-mail: wren@mail.xjtu.edu.cn Ren, Wei E-mail: wren@mail.xjtu.edu.cn; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang E-mail: wren@mail.xjtu.edu.cn

    2015-05-07

    One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe{sub 3}O{sub 4} thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe{sub 3}O{sub 4} thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H{sub 2}/Ar at 400 °C, the as-grown α−Fe{sub 2}O{sub 3} sample is reduced to Fe{sub 3}O{sub 4} phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications.

  11. Photoinduced Br Desorption from CsBr Thin Films Grown on Cu(100)

    SciTech Connect (OSTI)

    Halliday, Matthew T.; Joly, Alan G.; Hess, Wayne P.; Shluger, AL

    2015-10-22

    Thin films of CsBr deposited onto metals such as copper are potential photocathode materials for light sources and other applications. We investigate desorption dynamics of Br atoms from CsBr films grown on insulator (KBr, LiF) and metal (Cu) substrates induced by sub-bandgap 6.4 eV laser pulses. The experimental results demonstrate that the peak kinetic energy of Br atoms desorbed from CsBr/Cu films is much lower than that for the hyperthermal desorption from CsBr/LiF films. Kelvin probe measurements indicate negative charge at the surface following Br desorption from CsBr/Cu films. Our ab initio calculations of excitons at CsBr surfaces demonstrate that this behavior can be explained by an exciton model of desorption including electron trapping at the CsBr surface. Trapped negative charges reduce the energy of surface excitons available for Br desorption. We examine the electron-trapping characteristics of low-coordinated sites at the surface, in particular, divacancies and kink sites. We also provide a model of cation desorption caused by Franck-Hertz excitation of F centers at the surface in the course of irradiation of CsBr/Cu films. These results provide new insights into the mechanisms of photoinduced structural evolution of alkali halide films on metal substrates and activation of metal photocathodes coated with CsBr.

  12. The Collective Atomic Recoil Laser

    SciTech Connect (OSTI)

    Courteille, Ph.W.; Cube, C. avon; Deh, B.; Kruse, D.; Ludewig, A.; Slama, S.; Zimmermann, C.

    2005-05-05

    An ensemble of periodically ordered atoms coherently scatters the light of an incident laser beam. The scattered and the incident light may interfere and give rise to a light intensity modulation and thus to optical dipole forces which, in turn, emphasize the atomic ordering. This positive feedback is at the origin of the collective atomic recoil laser (CARL). We demonstrate this dynamics using ultracold atoms confined by dipole forces in a unidirectionally pumped far red-detuned high-finesse optical ring cavity. Under the influence of an additional dissipative force exerted by an optical molasses the atoms, starting from an unordered distribution, spontaneously form a density grating moving at constant velocity. Additionally, steady state lasing is observed in the reverse direction if the pump laser power exceeds a certain threshold. We compare the dynamics of the atomic trajectories to the behavior of globally coupled oscillators, which exhibit phase transitions from incoherent to coherent states if the coupling strength exceeds a critical value.

  13. Atomic Data for Fusion, Volumes 1, 3, 4, and 5: The ORNL CFADC Redbooks

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Barnett, C. F.; Thomas, E. W.; Wiese, W. L.; Phaneuf, R. A.; Janev, R. K.; Pindzola, M. S.

    This location provides on-line, full-text versions of the most recent and most widely requested CFADC series of volumes ( Atomic Data for Fusion ) containing recommended data for certain fusion relevant atomic collision processes. this website also provides a title list of all the CFADC published Redbooks.

  14. Shock initiation experiments on ratchet grown PBX 9502

    SciTech Connect (OSTI)

    Gustavsen, Richard L; Thompson, Darla G; Olinger, Barton W; Deluca, Racci; Bartram, Brian D; Pierce, Timothy H; Sanchez, Nathaniel J

    2010-01-01

    This study compares the shock initiation behavior of PBX 9502 pressed to less than nominal density (nominal density is 1.890 {+-} 0.005 g/cm{sup 3}) with PBX 9502 pressed to nominal density and then ''ratchet grown'' to low density. PBX 9502 is an insensitive plastic bonded explosive consisting of 95 weight % dry-aminated tri-amino-tri-nitro-benzene (TATB) and 5 weight % Kel-F 800 plastic binder. ''Ratchet growth'' - an irreversible increase in specific volume - occurs when an explosive based on TATB is temperature cycled. The design of our study is as follows: PBX 9502, all from the same lot, received the following four treatments. Samples in the first group were pressed to less than nominal density. These were not ratchet grown and used as a baseline. Samples in the second group were pressed to nominal density and then ratchet grown by temperature cycling 30 times between -54 C and +80 C. Samples in the final group were pressed to nominal density and cut into 100 mm by 25.4 mm diameter cylinders. During thermal cycling the cylinders were axially constrained by a 100 psi load. Samples for shock initiation experiments were cut perpendicular (disks) and parallel (slabs) to the axial load. The four sample groups can be summarized with the terms pressed low, ratchet grown/no load, axial load/disks, and axial load/slabs. All samples were shock initiated with nearly identical inputs in plate impact experiments carried out on a gas gun. Wave profiles were measured after propagation through 3, 4, 5, and 6 mm of explosive. Side by side comparison of wave profiles from different samples is used as a measure of relative sensitivity. All reduced density samples were more shock sensitive than nominal density PBX 9502. Differences in shock sensitivity between ratchet grown and pressed to low density PBX 9502 were small, but the low density pressings are slightly more sensitive than the ratchet grown samples.

  15. Composition and Bonding in Amorphous Carbon Films Grown by Ion Beam Assisted Deposition: Influence of the Assistance Voltage

    SciTech Connect (OSTI)

    Albella, J.M.; Banks, J.C.; Climent-Font, A.; Doyle, B.L.; Gago, R.; Jimenez, I.; Terminello, L.J.

    1998-11-12

    Amorphous carbon films have been grown by evaporation of graphite with concurrent Ar+ ions bombardment assistance. The ion energy has been varied between 0-800 V while keeping a constant ion to carbon atom arrival ratio. Film composition and density were determined by ion scattering techniques (RBS and ERDA), indicating a negligible hydrogen content and a density dependence with the assistance voltage. The bonding structure of the films has been studied by Raman and X-ray Absorption Near-Edge (XANES) spectroscopy. Different qualitative effects have been found depending on the ion energy range. For ion energies below 300 eV, there is a densification of the carbon layer due to the increase in the sp3 content. For ion energies above 300 eV sputtering phenomena dominate over densification, and thinner films are found with increasing assistance voltage until no film is grown over 600 V. The films with the highest SP3 content are grown with intermediate energies between 200-300 V.

  16. General Atomics | Open Energy Information

    Open Energy Info (EERE)

    Product: General Atomics offers research, development and consulting services to the nuclear industry, including nuclear energy production, manufacturing, defense and related...

  17. X-ray magnetic circular dichroism for Co{sub x}Fe{sub 4?x}N (x?=?0, 3, 4) films grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Ito, Keita; Sanai, Tatsunori; Yasutomi, Yoko; Toko, Kaoru; Suemasu, Takashi; Zhu, Siyuan; Kimura, Akio; Takeda, Yukiharu; Saitoh, Yuji

    2014-05-07

    We evaluated orbital (m{sub orb}) and spin magnetic moments (m{sub spin}) of Co{sub x}Fe{sub 4?x}N (x?=?0, 3, 4) epitaxial thin films grown by molecular beam epitaxy using x-ray magnetic circular dichroism, and discussed the dependence of these values on x. Site-averaged m{sub spin} value of Fe atoms was deduced to be 1.91??{sub B} per atom, and that of Co atoms to be 1.47??{sub B} per atom in Co{sub 3}FeN at 300?K. These values are close to 1.87??{sub B} per Fe atom in Fe{sub 4}N and 1.43??{sub B} per Co atom in Co{sub 4}N, respectively. This result implies that the Fe and Co atoms in the Co{sub 3}FeN films were located both at corner and face-centered sites in the anti-perovskite lattice. Spin magnetic moments per unit cell were decreased linearly with increasing x in Co{sub x}Fe{sub 4?x}N. This tendency is in good agreement with theory predicted by the first-principle calculation.

  18. Atomic Scale Characterization of Compound Semiconductors Using Atom Probe Tomography

    SciTech Connect (OSTI)

    Gorman, B. P.; Norman, A. G.; Lawrence, D.; Prosa, T.; Guthrey, H.; Al-Jassim, M.

    2011-01-01

    Internal interfaces are critical in determining the performance of III-V multijunction solar cells. Studying these interfaces with atomic resolution using a combination of transmission electron microscopy (TEM), atom probe tomography (APT), and density functional calculations enables a more fundamental understanding of carrier dynamics in photovoltaic (PV) device structures. To achieve full atomic scale spatial and chemical resolution, data acquisition parameters in laser pulsed APT must be carefully studied to eliminate surface diffusion. Atom probe data with minimized group V ion clustering and expected stoichiometry can be achieved by adjusting laser pulse power, pulse repetition rate, and specimen preparation parameters such that heat flow away from the evaporating surface is maximized. Applying these improved analysis conditions to III-V based PV gives an atomic scale understanding of compositional and dopant profiles across interfaces and tunnel junctions and the initial stages of alloy clustering and dopant accumulation. Details on APT experimental methods and future in-situ instrumentation developments are illustrated.

  19. Experimental phasing for structure determination using membrane-protein crystals grown by the lipid cubic phase method

    SciTech Connect (OSTI)

    Li, Dianfan; Pye, Valerie E.; Caffrey, Martin

    2015-01-01

    Very little information is available in the literature concerning the experimental heavy-atom phasing of membrane-protein structures where the crystals have been grown using the lipid cubic phase (in meso) method. In this paper, pre-labelling, co-crystallization, soaking, site-specific mercury binding to genetically engineered single-cysteine mutants and selenomethionine labelling as applied to an integral membrane kinase crystallized in meso are described. An assay to assess cysteine accessibility for mercury labelling of membrane proteins is introduced. Despite the marked increase in the number of membrane-protein structures solved using crystals grown by the lipid cubic phase or in meso method, only ten have been determined by SAD/MAD. This is likely to be a consequence of the technical difficulties associated with handling proteins and crystals in the sticky and viscous hosting mesophase that is usually incubated in glass sandwich plates for the purposes of crystallization. Here, a four-year campaign aimed at phasing the in meso structure of the integral membrane diacylglycerol kinase (DgkA) from Escherichia coli is reported. Heavy-atom labelling of this small hydrophobic enzyme was attempted by pre-labelling, co-crystallization, soaking, site-specific mercury binding to genetically engineered single-cysteine mutants and selenomethionine incorporation. Strategies and techniques for special handling are reported, as well as the typical results and the lessons learned for each of these approaches. In addition, an assay to assess the accessibility of cysteine residues in membrane proteins for mercury labelling is introduced. The various techniques and strategies described will provide a valuable reference for future experimental phasing of membrane proteins where crystals are grown by the lipid cubic phase method.

  20. The Atomic City / The Magic of the Atom - 1950's Atomic Energy Commission Documentary

    ScienceCinema (OSTI)

    None

    2014-07-31

    The story of American cities located near atomic power plants, and steps taken monitoring radiation to ensure the safety of the public who live nearby. .

  1. The Atomic City / The Magic of the Atom - 1950's Atomic Energy Commission Documentary

    SciTech Connect (OSTI)

    2012-06-04

    The story of American cities located near atomic power plants, and steps taken monitoring radiation to ensure the safety of the public who live nearby. .

  2. INFOGRAPHIC: Wide Bandgap Semiconductors | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    INFOGRAPHIC: Wide Bandgap Semiconductors INFOGRAPHIC: Wide Bandgap Semiconductors January 21, 2014 - 12:44pm Addthis INFOGRAPHIC: Wide Bandgap Semiconductors MORE RESOURCES Watch the video on WBG semiconductors Read the Advanced Manufacturing Office fact sheet on WBG semiconductors Subscribe to Advanced Manufacturing Office news updates Learn about the Clean Energy Manufacturing Initiative For decades, power electronics - or tiny pieces of equipment such as inverters and rectifiers made of

  3. WIDE BAND REGENERATIVE FREQUENCY DIVIDER AND MULTIPLIER

    DOE Patents [OSTI]

    Laine, E.F.

    1959-11-17

    A regenerative frequency divider and multiplier having wide band input characteristics is presented. The circuit produces output oscillations having frequencies related by a fixed ratio to input oscillations over a wide band of frequencies. In accomplishing this end, the divider-multiplier includes a wide band input circuit coupled by mixer means to a wide band output circuit having a pass band related by a fixed ratio to that of the input circuit. A regenerative feedback circuit derives a fixed frequency ratio feedback signal from the output circuit and applies same to the mixer means in proper phase relation to sustain fixed frequency ratio oscillations in the output circuit.

  4. Opportunities for Wide Bandgap Semiconductor Power Electronics...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell ... kgd H2 produced) Fuel Cell System Cost Transportation projected to (500,000 ...

  5. West Wide Programmatic Environmental Impact Statement Record...

    Open Energy Info (EERE)

    navigation, search OpenEI Reference LibraryAdd to library Legal Document- OtherOther: West Wide Programmatic Environmental Impact Statement Record of Decision (BLM)Legal...

  6. Site-wide Environmental Impact Statement

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SWEIS Site-wide Environmental Impact Statement We analyze the potential environmental impacts ... and the Department of Energy's NEPA Implementing Procedures (10 CFR part 1021). ...

  7. Site-wide Environmental Impact Statement

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SWEIS Site-wide Environmental Impact Statement We analyze the potential environmental impacts associated with Laboratory operations and facilities. Contact Environmental...

  8. Radioactive Waste Management Complex Wide Review

    Office of Environmental Management (EM)

    This page intentionally blank i Complex-Wide Review of DOE's Radioactive Waste Management ... 1.8 Demonstrated Progress in Radioactive Waste Management ......

  9. Interconnection-Wide Transmission Planning Initiative: Topic...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Western Interconnection on Electric Resource Planning and Priorities Interconnection-Wide Transmission Planning Initiative: Topic B, Cooperation Among States in the Western ...

  10. Interconnection-Wide Transmission Planning Initiative: Topic...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Eastern Interconnection on Electric Resource Planning and Priorities Interconnection-Wide Transmission Planning Initiative: Topic B, Cooperation Among States in the Eastern ...

  11. Interconnection-Wide Transmission Planning Initiative: Topic...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    A, Interconnection-Level Analysis and Planning Interconnection-Wide Transmission Planning Initiative: Topic A, Interconnection-Level Analysis and Planning A description of the ...

  12. Interconnection-Wide Transmission Planning Initiative: Topic...

    Energy Savers [EERE]

    the Texas Interconnection Interconnection-Wide Transmission Planning Initiative: Topic B, State Agency Input Regarding Electric Resource and Transmission Planning in the Texas ...

  13. Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography

    SciTech Connect (OSTI)

    Bonef, Bastien; Rouvire, Jean-Luc; Jouneau, Pierre-Henri; Bellet-Amalric, Edith; Grard, Lionel; Mariette, Henri; Andr, Rgis; Bougerol, Catherine; Grenier, Adeline

    2015-02-02

    High resolution scanning transmission electron microscopy and atom probe tomography experiments reveal the presence of an intermediate layer at the interface between two binary compounds with no common atom, namely, ZnTe and CdSe for samples grown by Molecular Beam Epitaxy under standard conditions. This thin transition layer, of the order of 1 to 3 atomic planes, contains typically one monolayer of ZnSe. Even if it occurs at each interface, the direct interface, i.e., ZnTe on CdSe, is sharper than the reverse one, where the ZnSe layer is likely surrounded by alloyed layers. On the other hand, a CdTe-like interface was never observed. This interface knowledge is crucial to properly design superlattices for optoelectronic applications and to master band-gap engineering.

  14. Material and detector properties of cadmium manganese telluride (Cd1-xMnxTe) crystals grown by the modified floating-zone method

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Roy, U. N.; Yang, G.; Liu, T.; Zhong, R.; Schneelock, J.; et al

    2014-12-24

    We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd1-xMnxTe; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd1-xMnxTe crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Thus, our experimental results show that CMT crystals grown by the modified floating zone method apparently are free from Te inclusions. However,more » we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.« less

  15. An Atomic-Level Understanding of Copper-Based Catalysts

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    An Atomic-Level Understanding of Copper-Based Catalysts An Atomic-Level Understanding of Copper-Based Catalysts Print Thursday, 05 May 2016 12:20 Copper-based catalysts are widely used in chemical industries to convert water and carbon monoxide to hydrogen, carbon dioxide, and methanol. There are theoretical models used to explain this reaction, but a complete understanding of the process has been lacking. However, recent research at the ALS has shed light on the process, giving scientists key

  16. Sandia National Laboratories: DOE Complex Wide Agreements

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DOE Complex Wide Agreements Sandia National Laboratories utilizes complex wide agreements to leverage the annual spending, to yield lower prices, and to provide cost savings to the complex. The Complex agreements utilized by Sandia National Laboratories include: Supply Chain Management Center (SCMC) agreements Integrated Contractor Purchasing TEAM (ICPT) General Services Administration (GSA)

  17. Wide Bandgap Materials | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    1 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation ape007_chinthavali_2011_o.pdf (472.25 KB) More Documents & Publications Wide Bandgap Materials Wide Bandgap Materials High Temperature, High Voltage Fully Integrated Gate Driver Circuit

  18. Media Advisory: Site-wide Safety Standards

    Broader source: Energy.gov [DOE]

    Department of Energy to announce two additions to the Hanford Site-wide Safety Standards – a set of 14 areas where Hanford contractors have collaborated to establish one uniform standard to guide safe operations. The latest additions to the Site-wide Safety Standards are Fall Protection and Electrical Safety.

  19. Browsing the World Wide Web from behind a firewall

    SciTech Connect (OSTI)

    Simons, R.W.

    1995-02-01

    The World Wide Web provides a unified method of access to various information services on the Internet via a variety of protocols. Mosaic and other browsers give users a graphical interface to the Web that is easier to use and more visually pleasing than any other common Internet information service today. The availability of information via the Web and the number of users accessing it have both grown rapidly in the last year. The interest and investment of commercial firms in this technology suggest that in the near future, access to the Web may become as necessary to doing business as a telephone. This is problematical for organizations that use firewalls to protect their internal networks from the Internet. Allowing all the protocols and types of information found in the Web to pass their firewall will certainly increase the risk of attack by hackers on the Internet. But not allowing access to the Web could be even more dangerous, as frustrated users of the internal network are either unable to do their jobs, or find creative new ways to get around the firewall. The solution to this dilemma adopted at Sandia National Laboratories is described. Discussion also covers risks of accessing the Web, design alternatives considered, and trade-offs used to find the proper balance between access and protection.

  20. In-situ control system for atomization

    DOE Patents [OSTI]

    Anderson, I.E.; Figliola, R.S.; Terpstra, R.L.

    1995-06-13

    Melt atomizing apparatus comprising a melt supply orifice for supplying the melt for atomization and gas supply orifices proximate the melt supply orifice for supplying atomizing gas to atomize the melt as an atomization spray is disclosed. The apparatus includes a sensor, such as an optical and/or audio sensor, for providing atomization spray data, and a control unit responsive to the sensed atomization spray data for controlling at least one of the atomizing gas pressure and an actuator to adjust the relative position of the gas supply orifice and melt supply in a manner to achieve a desired atomization spray. 3 figs.

  1. In-situ control system for atomization

    DOE Patents [OSTI]

    Anderson, Iver E.; Figliola, Richard S.; Terpstra, Robert L.

    1995-06-13

    Melt atomizing apparatus comprising a melt supply orifice for supplying the melt for atomization and gas supply orifices proximate the melt supply orifice for supplying atomizing gas to atomize the melt as an atomization spray. The apparatus includes a sensor, such as an optical and/or audio sensor, for providing atomization spray data, and a control unit responsive to the sensed atomization spray data for controlling at least one of the atomizing gas pressure and an actuator to adjust the relative position of the gas supply orifice and melt supply in a manner to achieve a desired atomization spray.

  2. Supersonic coal water slurry fuel atomizer

    DOE Patents [OSTI]

    Becker, Frederick E.; Smolensky, Leo A.; Balsavich, John

    1991-01-01

    A supersonic coal water slurry atomizer utilizing supersonic gas velocities to atomize coal water slurry is provided wherein atomization occurs externally of the atomizer. The atomizer has a central tube defining a coal water slurry passageway surrounded by an annular sleeve defining an annular passageway for gas. A converging/diverging section is provided for accelerating gas in the annular passageway to supersonic velocities.

  3. Enhanced tunable magnetoresistance properties over a wide temperature...

    Office of Scientific and Technical Information (OSTI)

    thin films have been grown on SrTiOsub 3 (001) substrates by pulsed laser deposition. ... DEPOSITION; EPITAXY; LANTHANUM COMPOUNDS; LASER RADIATION; MAGNETORESISTANCE; ...

  4. Los Alamos National Laboratory ATOMIC PHOTOGRAPHY ATOMIC PHOTOGRAPHY

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ATOMIC PHOTOGRAPHY ATOMIC PHOTOGRAPHY BLASTS FROM THE PAST BLASTS FROM THE PAST Twenty-five U.S. atmospheric nuclear weapons operations (each a series of tests) were conducted from 1945 to 1963, primarily at the Pacific Proving Grounds and at the Nevada Test Site, southeastern Nevada. Below, observers witness Operation Greenhouse, Eniwetok Atoll, spring 1951. Greenhouse was a series of four tests. 17 Proof of principle for thermonuclear weapons, the 225-kiloton George test, May 8, 1951, of

  5. LANL Atomics Women Organization presentation

    SciTech Connect (OSTI)

    Nicholas, Nancy Jo

    2015-03-05

    The Powerpoint presentation highlights various activities at LANL that focus on countering and reducing world-wide nuclear threats.

  6. ATOMIC ENERGY ACT OF 1946

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    D. Niisc AEC Hcadqoartcrs Library Voliiinc I Principal Docriiiiciits U.S. ATOMIC ENERGY COMMISSION WASHINGTON, 1965 PUBLIC LAW 5 8 5 - 7 9 CONQRESS CHAPTER 724-2 ...

  7. Imaging atoms in 3-D

    ScienceCinema (OSTI)

    Ercius, Peter

    2014-06-27

    Berkeley Lab's Peter Ercius discusses "Imaging atoms in 3-D" in this Oct. 28, 2013 talk, which is part of a Science at the Theater event entitled Eight Big Ideas

  8. Efimov physics in cold atoms

    SciTech Connect (OSTI)

    Braaten, Eric . E-mail: braaten@mps.ohio-state.edu; Hammer, H.-W. . E-mail: hammer@itkp.uni-bonn.de

    2007-01-15

    Atoms with a large scattering length have universal low-energy properties that do not depend on the details of their structure or their interactions at short distances. In the 2-atom sector, the universal properties are familiar and depend only on the scattering length. In the 3-atom sector for identical bosons, the universal properties include the existence of a sequence of shallow triatomic molecules called Efimov trimers and log-periodic dependence of scattering observables on the energy and the scattering length. In this review, we summarize the universal results that are currently known. We also summarize the experimental information that is currently available with an emphasis on 3-atom loss processes.

  9. Theoretical studies of atomic transitions

    SciTech Connect (OSTI)

    Fischer, C.F.

    1990-10-01

    This paper discusses: lifetime of excited states; core-polarization studies; large relativistic calculations; Monte Carlo Hartree-Fock (MCHF) atomic structure package; and MCHF codes for the hypercube. (LSP)

  10. UNITED STATES ATOMIC ENERGY COMMISSION

    Office of Legacy Management (LM)

    I(S.0 -01: SPECIAL NUCLEAR MATERIAL LlCEWSE Pursuant to the Atomic Energy Act of 1954 and Title 10, Code of Federal Regulations, Chapter 1, Part 70, "Special Nuclear Material ...

  11. u. S. Atomic Energy Commission

    Office of Legacy Management (LM)

    S. Atomic Energy Commission R. 0. Box 30, Ansonia Station New York ES, N. Y. MATERIALS 5+k& hJf Reference: SK:BL Attention: Mr. R. J. Smith Jr. Director Special Materials Division ...

  12. Some topological states in one-dimensional cold atomic systems

    SciTech Connect (OSTI)

    Mei, Feng; Zhang, Dan-Wei; Zhu, Shi-Liang

    2015-07-15

    Ultracold atoms trapped in optical lattices nowadays have been widely used to mimic various models from condensed-matter physics. Recently, many great experimental progresses have been achieved for producing artificial magnetic field and spin–orbit coupling in cold atomic systems, which turn these systems into a new platform for simulating topological states. In this paper, we give a review focusing on quantum simulation of topologically protected soliton modes and topological insulators in one-dimensional cold atomic system. Firstly, the recent achievements towards quantum simulation of one-dimensional models with topological non-trivial states are reviewed, including the celebrated Jackiw–Rebbi model and Su–Schrieffer–Heeger model. Then, we will introduce a dimensional reduction method for systematically constructing high dimensional topological states in lower dimensional models and review its applications on simulating two-dimensional topological insulators in one-dimensional optical superlattices.

  13. DOE-wide NEPA Contracting Update

    Broader source: Energy.gov [DOE]

    A DOE team is evaluating the offers received in response to a Request for Quotations to provide NEPA support services. The scope of the solicitation is similar to that of the DOE-wide NEPA support...

  14. Opportunities for Wide Bandgap Semiconductor Power Electronics...

    Broader source: Energy.gov (indexed) [DOE]

    Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications" held on October 21, 2014. ... Vehicle Technologies Office Merit Review 2016: Advanced Low-Cost SiC and GaN Wide ...

  15. Sandia Wide-Bandgap Semiconductor Workshop

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... In response to increased interest in wide-bandgap (WBG) semiconductor projects by DOE, on October 30, 2012, Sandia hosted a one-day brain-storming workshop aimed at identifying the ...

  16. Nano transfer and nanoreplication using deterministically grown sacrificial nanotemplates

    DOE Patents [OSTI]

    Melechko, Anatoli V.; McKnight, Timothy E.; Guillorn, Michael A.; Ilic, Bojan; Merkulov, Vladimir I.; Doktycz, Mitchel J.; Lowndes, Douglas H.; Simpson, Michael L.

    2012-03-27

    Methods, manufactures, machines and compositions are described for nanotransfer and nanoreplication using deterministically grown sacrificial nanotemplates. An apparatus, includes a substrate and a nanoconduit material coupled to a surface of the substrate. The substrate defines an aperture and the nanoconduit material defines a nanoconduit that is i) contiguous with the aperture and ii) aligned substantially non-parallel to a plane defined by the surface of the substrate.

  17. Order parameters and magnetocrystalline anisotropy of off-stoichiometric D0{sub 22} Mn{sub 2.36}Ga epitaxial films grown on MgO (001) and SrTiO{sub 3} (001)

    SciTech Connect (OSTI)

    Lee, Hwachol; Sukegawa, Hiroaki Mitani, Seiji; Hono, Kazuhiro

    2015-07-21

    We study the relationship between long range order parameters and the magnetocrystalline anisotropy of off-stoichiometric D0{sub 22} Mn{sub 2.36}Ga (MnGa) epitaxial films grown on MgO (001) and SrTiO{sub 3} (STO) (001) single crystalline substrates. MnGa films deposited on MgO (001) show rather large irregular variation in magnetization with increasing substrate temperature in spite of the improved long range order of total atomic sites. The specific site long range order of Mn-I site characterized in the [101] orientation revealed the fluctuation of the occupation fraction of two Mn atomic sites with elevated substrate temperature, which appears more relevant to the observed magnetization change than the long range order of the total atomic sites. In case of MnGa films grown on the lattice-matched STO (001), high long range order of the total atomic sites in spite of the existence of secondary phase represents that the lattice mismatch plays a crucial role in determining the atomic arrangement of Mn and Ga atoms in the off-stoichiometric compositional case of MnGa.

  18. Perfect electromagnetic absorption at one-atom-thick scale

    SciTech Connect (OSTI)

    Li, Sucheng; Duan, Qian; Li, Shuo; Yin, Qiang; Lu, Weixin; Li, Liang; Hou, Bo; Gu, Bangming; Wen, Weijia

    2015-11-02

    We experimentally demonstrate that perfect electromagnetic absorption can be realized in the one-atom thick graphene. Employing coherent illumination in the waveguide system, the absorbance of the unpatterned graphene monolayer is observed to be greater than 94% over the microwave X-band, 7–13 GHz, and to achieve a full absorption, >99% in experiment, at ∼8.3 GHz. In addition, the absorption characteristic manifests equivalently a wide range of incident angle. The experimental results agree very well with the theoretical calculations. Our work accomplishes the broadband, wide-angle, high-performance absorption in the thinnest material with simple configuration.

  19. Bismuth-induced phase control of GaAs nanowires grown by molecular...

    Office of Scientific and Technical Information (OSTI)

    Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy Citation Details In-Document Search Title: Bismuth-induced phase control of GaAs nanowires grown by ...

  20. Luminescent properties of solution-grown ZnO nanorods. (Journal...

    Office of Scientific and Technical Information (OSTI)

    Luminescent properties of solution-grown ZnO nanorods. Citation Details In-Document Search Title: Luminescent properties of solution-grown ZnO nanorods. The optical properties of ...

  1. Atomic vapor laser isotope separation process

    DOE Patents [OSTI]

    Wyeth, Richard W.; Paisner, Jeffrey A.; Story, Thomas

    1990-01-01

    A laser spectroscopy system is utilized in an atomic vapor laser isotope separation process. The system determines spectral components of an atomic vapor utilizing a laser heterodyne technique.

  2. Fundamental Electroweak Studies using Trapped Ions & Atoms

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    collaboration performs fundamental electroweak studies on trapped ions & atoms. We use neutral atom and ion trapping techniques at radioactive ion beam facilities here and...

  3. Manhattan Project: Atomic Discoveries, 1890s-1939

    Office of Scientific and Technical Information (OSTI)

    The exact nature of these atoms remained elusive, however, despite centuries of attempts ... Explorations into the nature of the atom from 1919 to 1932 confirmed this new model, ...

  4. Atomic Photography: Blasts from the Past

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic Photography National Security Science Latest Issue:July 2015 past issues All Issues submit Atomic Photography: Blasts from the Past A gallery of images reveals the weird...

  5. Katharine Page-Atomic-level insights for better materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Katharine Page Katharine Page-Atomic-level insights for better materials Page's research supports materials' advances that could have wide-ranging impact, investigating, manipulating and manufacturing nano-particles. March 26, 2014 Katharine Page Katharine Page "Page advises young women to be unafraid of exploring new career options and to always ask questions and learn from others along the way." A Love for Science Impassioned by materials science, Katharine Page told her college

  6. Dissociation and ionization equilibria of deuterium fluid over a wide range of temperatures and densities

    SciTech Connect (OSTI)

    Zaghloul, Mofreh R.

    2015-06-15

    We investigate the dissociation and ionization equilibria of deuterium fluid over a wide range of temperatures and densities. The partition functions for molecular and atomic species are evaluated, in a statistical-mechanically consistent way, implementing recent developments in the literature and taking high-density effects into account. A new chemical model (free energy function) is introduced in which the fluid is considered as a mixture of diatomic molecules, atoms, ions, and free electrons. Intensive short range hard core repulsion is taken into account together with partial degeneracy of free electrons and Coulomb interactions among charged particles. Samples of computational results are presented as a set of isotherms for the degree of ionization, dissociated fraction of molecules, pressure, and specific internal energy for a wide range of densities and temperatures. Predictions from the present model calculations show an improved and sensible physical behavior compared to other results in the literature.

  7. Temperature dependence of mechanical stiffness and dissipation in ultrananocrystalline diamond films grown by the HFCVD techinque.

    SciTech Connect (OSTI)

    Adiga, V. P.; Sumant, A. V.; Suresh, S.; Gudeman, C.; Auciello, O.; Carlisle, J. A.; Carpick, R. W.; Materials Science Division; Univ. of Pennsylvania; Innovative Micro Tech.; Advanced Diamond Tech.

    2009-06-01

    We have characterized mechanical properties of ultrananocrystalline diamond (UNCD) thin films grown using the hot filament chemical vapor deposition (HFCVD) technique at 680 C, significantly lower than the conventional growth temperature of -800 C. The films have -4.3% sp{sup 2} content in the near-surface region as revealed by near edge x-ray absorption fine structure spectroscopy. The films, -1 {micro}m thick, exhibit a net residual compressive stress of 370 {+-} 1 MPa averaged over the entire 150 mm wafer. UNCD microcantilever resonator structures and overhanging ledges were fabricated using lithography, dry etching, and wet release techniques. Overhanging ledges of the films released from the substrate exhibited periodic undulations due to stress relaxation. This was used to determine a biaxial modulus of 838 {+-} 2 GPa. Resonant excitation and ring-down measurements in the kHz frequency range of the microcantilevers were conducted under ultrahigh vacuum (UHV) conditions in a customized UHV atomic force microscope system to determine Young's modulus as well as mechanical dissipation of cantilever structures at room temperature. Young's modulus is found to be 790 {+-} 30 GPa. Based on these measurements, Poisson's ratio is estimated to be 0.057 {+-} 0.038. The quality factors (Q) of these resonators ranged from 5000 to 16000. These Q values are lower than theoretically expected from the intrinsic properties of diamond. The results indicate that surface and bulk defects are the main contributors to the observed dissipation in UNCD resonators.

  8. Atomic memory access hardware implementations

    SciTech Connect (OSTI)

    Ahn, Jung Ho; Erez, Mattan; Dally, William J

    2015-02-17

    Atomic memory access requests are handled using a variety of systems and methods. According to one example method, a data-processing circuit having an address-request generator that issues requests to a common memory implements a method of processing the requests using a memory-access intervention circuit coupled between the generator and the common memory. The method identifies a current atomic-memory access request from a plurality of memory access requests. A data set is stored that corresponds to the current atomic-memory access request in a data storage circuit within the intervention circuit. It is determined whether the current atomic-memory access request corresponds to at least one previously-stored atomic-memory access request. In response to determining correspondence, the current request is implemented by retrieving data from the common memory. The data is modified in response to the current request and at least one other access request in the memory-access intervention circuit.

  9. Atomizing, continuous, water monitoring module

    DOE Patents [OSTI]

    Thompson, C.V.; Wise, M.B.

    1997-07-08

    A system for continuously analyzing volatile constituents of a liquid is described. The system contains a pump for continuously pumping the liquid to be tested at a predetermined flow rate into an extracting container through a liquid directing tube having an orifice at one end and positioned to direct the liquid into the extracting container at a flow rate sufficient to atomize the liquid within the extracting container. A continuous supply of helium carrier gas at a predetermined flow rate is directed through a tube into the extracting container and co-mingled with the atomized liquid to extract the volatile constituents contained within the atomized liquid. The helium containing the extracted volatile constituents flows out of the extracting container into a mass spectrometer for an analysis of the volatile constituents of the liquid. 3 figs.

  10. Atomizing, continuous, water monitoring module

    DOE Patents [OSTI]

    Thompson, Cyril V.; Wise, Marcus B.

    1997-01-01

    A system for continuously analyzing volatile constituents of a liquid is described. The system contains a pump for continuously pumping the liquid to be tested at a predetermined flow rate into an extracting container through a liquid directing tube having an orifice at one end and positioned to direct the liquid into the extracting container at a flow rate sufficient to atomize the liquid within the extracting container. A continuous supply of helium carrier gas at a predetermined flow rate is directed through a tube into the extracting container and co-mingled with the atomized liquid to extract the volatile constituents contained within the atomized liquid. The helium containing the extracted volatile constituents flows out of the extracting container into a mass spectrometer for an analysis of the volatile constituents of the liquid.

  11. Hot atom chemistry and radiopharmaceuticals

    SciTech Connect (OSTI)

    Krohn, Kenneth A.; Moerlein, Stephen M.; Link, Jeanne M.; Welch, Michael J.

    2012-12-19

    The chemical products made in a cyclotron target are a combined result of the chemical effects of the nuclear transformation that made the radioactive atom and the bulk radiolysis in the target. This review uses some well-known examples to understand how hot atom chemistry explains the primary products from a nuclear reaction and then how radiation chemistry is exploited to set up the optimal product for radiosynthesis. It also addresses the chemical effects of nuclear decay. There are important principles that are common to hot atom chemistry and radiopharmaceutical chemistry. Both emphasize short-lived radionuclides and manipulation of high specific activity nuclides. Furthermore, they both rely on radiochromatographic separation for identification of no-carrieradded products.

  12. Atomic hydrogen in planetary nebulae

    SciTech Connect (OSTI)

    Schneider, S.E.; Silverglate, P.R.; Altschuler, D.R.; Giovanardi, C.

    1987-03-01

    The authors searched for neutral atomic hydrogen associated with 22 planetary nebulae and three evolved stars in the 21 cm line at the Arecibo Observatory. Objects whose radial velocities permitted discrimination from Galactic H I were chosen for observation. Hydrogen was detected in absorption from IC 4997. From the measurements new low limits are derived to the mass of atomic hydrogen associated with the undetected nebulae. Radio continuum observations were also made of several of the nebulae at 12.6 cm. The authors reexamine previous measurements of H I in planetary nebulae, and present the data on a consistent footing. The question of planetary nebula distances is considered at length. Finally, implications of the H I measurements for nebular evolution are discussed and it is suggested that atomic hydrogen seen in absorption was expelled from the progenitor star during the final 1000 yr prior to the onset of ionization. 68 references.

  13. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    SciTech Connect (OSTI)

    Vanacore, G. M.; Zani, M.; Tagliaferri, A.; Nicotra, G.; Bollani, M.; Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F.; Capellini, G.; Isella, G.; Osmond, J.

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  14. Relativistic atomic beam spectroscopy II

    SciTech Connect (OSTI)

    1989-12-31

    The negative ion of H is one of the simplest 3-body atomic systems. The techniques we have developed for experimental study of atoms moving near speed of light have been productive. This proposal request continuing support for experimental studies of the H{sup -} system, principally at the 800 MeV linear accelerator (LAMPF) at Los Alamos. Four experiments are currently planned: photodetachment of H{sup -} near threshold in electric field, interaction of relativistic H{sup -} ions with matter, high excitations and double charge escape in H{sup -}, and multiphoton detachment of electrons from H{sup -}.

  15. Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition

    SciTech Connect (OSTI)

    Nam, Youngwoo, E-mail: youngwoo.nam@chalmers.se [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Sun, Jie; Lindvall, Niclas; Yurgens, August [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Jae Yang, Seung; Rae Park, Chong [Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of); Woo Park, Yung [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2014-01-13

    We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.

  16. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  17. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  18. Nanotransfer and nanoreplication using deterministically grown sacrificial nanotemplates

    DOE Patents [OSTI]

    Melechko, Anatoli V.; McKnight, Timothy E. , Guillorn, Michael A.; Ilic, Bojan; Merkulov, Vladimir I.; Doktycz, Mitchel J.; Lowndes, Douglas H.; Simpson, Michael L.

    2011-05-17

    Methods, manufactures, machines and compositions are described for nanotransfer and nanoreplication using deterministically grown sacrificial nanotemplates. A method includes depositing a catalyst particle on a surface of a substrate to define a deterministically located position; growing an aligned elongated nanostructure on the substrate, an end of the aligned elongated nanostructure coupled to the substrate at the deterministically located position; coating the aligned elongated nanostructure with a conduit material; removing a portion of the conduit material to expose the catalyst particle; removing the catalyst particle; and removing the elongated nanostructure to define a nanoconduit.

  19. Wide temperature range seal for demountable joints

    DOE Patents [OSTI]

    Sixsmith, H.; Valenzuela, J.A.; Nutt, W.E.

    1991-07-23

    The present invention is directed to a seal for demountable joints operating over a wide temperature range down to liquid helium temperatures. The seal has anti-extrusion guards which prevent extrusion of the soft ductile sealant material, which may be indium or an alloy thereof. 6 figures.

  20. Wide temperature range seal for demountable joints

    DOE Patents [OSTI]

    Sixsmith, Herbert; Valenzuela, Javier A.; Nutt, William E.

    1991-07-23

    The present invention is directed to a seal for demountable joints operating over a wide temperature range down to liquid helium temperatures. The seal has anti-extrusion guards which prevent extrusion of the soft ductile sealant material, which may be indium or an alloy thereof.

  1. Coherent cooling of atoms in a frequency-modulated standing laser wave: Wave function and stochastic trajectory approaches

    SciTech Connect (OSTI)

    Argonov, V. Yu.

    2014-11-15

    The wave function of a moderately cold atom in a stationary near-resonant standing light wave delocalizes very fast due to wave packet splitting. However, we show that frequency modulation of the field can suppress packet splitting for some atoms whose specific velocities are in a narrow range. These atoms remain localized in a small space for a long time. We demonstrate and explain this effect numerically and analytically. We also demonstrate that the modulated field can not only trap but also cool the atoms. We perform a numerical experiment with a large atomic ensemble having wide initial velocity and energy distributions. During the experiment, most of atoms leave the wave while the trapped atoms have a narrow energy distribution.

  2. Chemical and microstructural characterization of thermally grown alumina scales

    SciTech Connect (OSTI)

    Natesan, K.; Richier, C.; Veal, B.W.

    1995-09-01

    An experimental program has been initiated to evaluate the chemical, microstructural, and mechanical integrity of thermally grown oxide scales to establish requirements for improved corrosion performance in terms of composition, structure, and properties. Iron aluminides of several compositions were selected for the study. Oxidation studies were conducted in air and oxygen environments at 1000{degrees}C. The results showed that the scaling kinetics followed a parabolic rate law but that the rates in early stages of oxidation were significantly greater than in later stages; the difference could be attributed to the presence of fast-growing transient iron oxides in the layer during the early stages. Further, scale failure occurred via gross spallation, scale cracking, and nodule formation and was influenced by alloy composition. Auger electron spectroscopy of Ar-exposed specimens of ternary Fe-Cr-Al alloy showed sulfur on the gas/scale side of the interface; the sulfur decreased as the exposure time increased. Raman spectroscopy and ruby fluorescence were used to examine the scale development as a function of oxidation temperature. Ruby-line shift is used to examine phase transformations in alumina and to calculate compressive strains in thermally grown scales.

  3. Atomic layer deposition of titanium sulfide and its application in extremely thin absorber solar cells

    SciTech Connect (OSTI)

    Mahuli, Neha; Sarkar, Shaibal K.

    2015-01-15

    Atomic layer deposition (ALD) of TiS{sub 2} is investigated with titanium tetrachloride and hydrogen sulfide precursors. In-situ quartz crystal microbalance and ex-situ x-ray reflectivity measurements are carried out to study self-limiting deposition chemistry and material growth characteristics. The saturated growth rate is found to be ca. 0.5 Å/cycle within the ALD temperature window of 125–200 °C. As grown material is found poorly crystalline. ALD grown TiS{sub 2} is applied as a photon harvesting material for solid state sensitized solar cells with TiO{sub 2} as electron transport medium. Initial results with Spiro-OMeTAD as hole conducting layer show ca. 0.6% energy conversion efficiency under 1 sun illumination.

  4. Atomic-force microscopy and photoluminescence of nanostructured CdTe

    SciTech Connect (OSTI)

    Babentsov, V.; Sizov, F.; Franc, J.; Luchenko, A.; Svezhentsova, E. Tsybrii, Z.

    2013-09-15

    Low-dimensional CdTe nanorods with a diameter of 10-30 nm and a high aspect ratio that reaches 100 are studied. The nanorods are grown by the physical vapor transport method with the use of Bi precipitates on the substrates. In addition, thin films of closely packed CdTe nanorods with the transverse dimensions {approx}(100-200) nm are grown. Atomic-force microscopy shows that the cross sections of all of the nanorods were hexagonally shaped. By photoluminescence measurements, the inference about the wurtzite structure of CdTe is supported, and the structural quality, electron-phonon coupling, and defects are analyzed. On the basis of recent ab initio calculations, the nature of defects responsible for the formation of deep levels in the CdTe layers and bulk crystals are analyzed.

  5. Thematic World Wide Web Visualization System

    Energy Science and Technology Software Center (OSTI)

    1996-10-10

    WebTheme is a system designed to facilitate world wide web information access and retrieval through visualization. It consists of two principal pieces, a WebTheme Server which allows users to enter in a query and automatocally harvest and process information of interest, and a WebTheme browser, which allows users to work with both Galaxies and Themescape visualizations of their data within a JAVA capable world wide web browser. WebTheme is an Internet solution, meaning that accessmore » to the server and the resulting visualizations can all be performed through the use of a WWW browser. This allows users to access and interact with SPIRE (Spatial Paradigm for Information Retrieval and Exploration) based visualizations through a web browser regardless of what computer platforms they are running on. WebTheme is specifically designed to create databases by harvesting and processing WWW home pages available on the Internet.« less

  6. Efficient Wide Area Data Transfer Protocols

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Efficient Wide Area Data Transfer Protocols for 100 Gbps Networks and Beyond Ezra Kissel School of Informatics and Computing Indiana University Bloomington, IN 47405 ezkissel@indiana.edu Martin Swany School of Informatics and Computing Indiana University Bloomington, IN 47405 swany@iu.edu Brian Tierney Lawrence Berkeley National Laboratory Berkeley, CA 94720 bltierney@lbl.gov Eric Pouyoul Lawrence Berkeley National Laboratory Berkeley, CA 94720 epouyoul@lbl.gov Due to a number of recent

  7. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

    SciTech Connect (OSTI)

    Nepal, N.; Qadri, S. B.; Hite, J. K.; Mahadik, N. A.; Mastro, M. A.; Eddy, C. R. Jr.

    2013-08-19

    Thin AlN layers were grown at 200650 C by plasma assisted atomic layer epitaxy (PA-ALE) simultaneously on Si(111), sapphire (1120), and GaN/sapphire substrates. The AlN growth on Si(111) is self-limited for trimethyaluminum (TMA) pulse of length > 0.04 s, using a 10 s purge. However, the AlN nucleation on GaN/sapphire is non-uniform and has a bimodal island size distribution for TMA pulse of ?0.03 s. The growth rate (GR) remains almost constant for T{sub g} between 300 and 400 C indicating ALE mode at those temperatures. The GR is increased by 20% at T{sub g} = 500 C. Spectroscopic ellipsometry (SE) measurement shows that the ALE AlN layers grown at T{sub g} ? 400 C have no clear band edge related features, however, the theoretically estimated band gap of 6.2 eV was measured for AlN grown at T{sub g} ? 500 C. X-ray diffraction measurements on 37 nm thick AlN films grown at optimized growth conditions (T{sub g} = 500 C, 10 s purge, 0.06 s TMA pulse) reveal that the ALE AlN on GaN/sapphire is (0002) oriented with rocking curve full width at the half maximum (FWHM) of 670 arc sec. Epitaxial growth of crystalline AlN layers by PA-ALE at low temperatures broadens application of the material in the technologies that require large area conformal growth at low temperatures with thickness control at the atomic scale.

  8. Displacement per Atom, Primary Knocked-on Atoms Produced in an Atomic Solid Target

    Energy Science and Technology Software Center (OSTI)

    2015-07-01

    Version 00 DART calculates the total number of displacements, primary knocked-on atoms, recoil spectra, displacement cross sections and displacement per atoms rates in a poly atomic solid target, composed of many different isotopes, using ENDF/B-VI derived cross sections. To calculate these values, different incident particles were considered: neutrons, ions and electrons. The user needs only to specify an incident particle energy spectrum and the composition of the target. The number of displaced atoms is calculatedmore » within the Binary Collision Approximation framework. To calculate the number of displacements the DART code does not use the classical NRT dpa analytical formula, which is only appropriate for projectile and target of the same mass. It numerically solves the linearized Boltzmann equation for a polyatomic target. It can be a useful tool to select the nature and energy of ions or electrons in particle accelerators or electron microscopes to mimic the primary damage induced by neutron irradiation in nuclear plants or fission facilities. Nuclear data: • Typically any ENDFB format evaluation may be used. This package includes the ENDFB-VI nuclear data library. Energy ranges: • Neutron or ion : 10E-11 to 20 MeV Data library distributed with DART v1.0: • ENDFB-VI nuclear data library« less

  9. Atomic vapor laser isotope separation

    SciTech Connect (OSTI)

    Stern, R.C.; Paisner, J.A.

    1985-11-08

    Atomic vapor laser isotope separation (AVLIS) is a general and powerful technique. A major present application to the enrichment of uranium for light-water power reactor fuel has been under development for over 10 years. In June 1985 the Department of Energy announced the selection of AVLIS as the technology to meet the nation's future need for the internationally competitive production of uranium separative work. The economic basis for this decision is considered, with an indicated of the constraints placed on the process figures of merit and the process laser system. We then trace an atom through a generic AVLIS separator and give examples of the physical steps encountered, the models used to describe the process physics, the fundamental parameters involved, and the role of diagnostic laser measurements.

  10. The Modified Embedded Atom Method

    SciTech Connect (OSTI)

    Baskes, M.I.

    1994-08-01

    Recent modifications have been made to generalize the Embedded Atom Method (EAM) to describe bonding in diverse materials. By including angular dependence of the electron density in an empirical way, the Modified Embedded Atom Method (MEAM) has been able to reproduce the basic energetic and structural properties of 45 elements. This method is ideally suited for examining the interfacial behavior of dissimilar materials. This paper explains in detail the derivation of the method, shows how the parameters of the MEAM are determined directly from experiment or first principles calculations, and examines the quality of the reproduction of the database. Materials with fcc, bcc, hcp, and diamond cubic crystal structure are discussed. A few simple examples of the application of the MEAM to surfaces and interfaces are presented. Calculations of pullout of a SiC fiber in a diamond matrix as a function of applied stress show non-uniform deformation of the fiber.

  11. Native defects in MBE-grown CdTe

    SciTech Connect (OSTI)

    Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

    2013-12-04

    Deep-level traps in both n- and p-type CdTe layers, grown by molecular-beam epitaxy on GaAs substrates, have been investigated by means of deep-level transient spectroscopy (DLTS). Four of the traps revealed in the DLTS spectra, which displayed exponential kinetics for capture of charge carriers into the trap states, have been assigned to native point defects: Cd interstitial, Cd vacancy, Te antisite defect and a complex formed of the Te antisite and Cd vacancy. Three further traps, displaying logarithmic capture kinetics, have been ascribed to electron states of treading dislocations generated at the mismatched interface with the substrate and propagated through the CdTe layer.

  12. Carbon nanotubes grown on bulk materials and methods for fabrication

    DOE Patents [OSTI]

    Menchhofer, Paul A.; Montgomery, Frederick C.; Baker, Frederick S.

    2011-11-08

    Disclosed are structures formed as bulk support media having carbon nanotubes formed therewith. The bulk support media may comprise fibers or particles and the fibers or particles may be formed from such materials as quartz, carbon, or activated carbon. Metal catalyst species are formed adjacent the surfaces of the bulk support material, and carbon nanotubes are grown adjacent the surfaces of the metal catalyst species. Methods employ metal salt solutions that may comprise iron salts such as iron chloride, aluminum salts such as aluminum chloride, or nickel salts such as nickel chloride. Carbon nanotubes may be separated from the carbon-based bulk support media and the metal catalyst species by using concentrated acids to oxidize the carbon-based bulk support media and the metal catalyst species.

  13. WIRELESS MINE-WIDE TELECOMMUNICATIONS TECHNOLOGY

    SciTech Connect (OSTI)

    Zvi H. Meiksin

    2004-03-01

    A comprehensive mine-wide, two-way wireless voice and data communication system for the underground mining industry was developed. The system achieves energy savings through increased productivity and greater energy efficiency in meeting safety requirements within mines. The mine-wide system is comprised of two interfaced subsystems: a through-the-earth communications system and an in-mine communications system. The mine-wide system permits two-way communication among underground personnel and between underground and surface personnel. The system was designed, built, and commercialized. Several systems are in operation in underground mines in the United States. The use of these systems has proven they result in considerable energy savings. A system for tracking the location of vehicles and people within the mine was also developed, built and tested successfully. Transtek's systems are being used by the National Institute of Occupational Safety and Health (NIOSH) in their underground mine rescue team training program. This project also resulted in a spin-off rescue team lifeline and communications system. Furthermore, the project points the way to further developments that can lead to a GPS-like system for underground mines allowing the use of autonomous machines in underground mining operations, greatly reducing the amount of energy used in these operations. Some products developed under this program are transferable to applications in fields other than mining. The rescue team system is applicable to use by first responders to natural, accidental, or terrorist-caused building collapses. The in-mine communications system can be installed in high-rise buildings providing in-building communications to security and maintenance personnel as well as to first responders.

  14. The Future of Atomic Energy

    DOE R&D Accomplishments [OSTI]

    Fermi, E.

    1946-05-27

    There is definitely a technical possibility that atomic power may gradually develop into one of the principal sources of useful power. If this expectation will prove correct, great advantages can be expected to come from the fact that the weight of the fuel is almost negligible. This feature may be particularly valuable for making power available to regions of difficult access and far from deposits of coal. It also may prove a great asset in mobile power units for example in a power plant for ship propulsion. On the negative side there are some technical limitations to be applicability of atomic power of which perhaps the most serious is the impossibility of constructing light power units; also there will be some peculiar difficulties in operating atomic plants, as for example the necessity of handling highly radioactive substances which will necessitate, at least for some considerable period, the use of specially skilled personnel for the operation. But the chief obstacle in the way of developing atomic power will be the difficulty of organizing a large scale industrial development in an internationally safe way. This presents actually problems much more difficult to solve than any of the technical developments that are necessary, It will require an unusual amount of statesmanship to balance properly the necessity of allaying the international suspicion that arises from withholding technical secrets against the obvious danger of dumping the details of the procedures for an extremely dangerous new method of warfare on a world that may not yet be prepared to renounce war. Furthermore, the proper balance should be found in the relatively short time that will elapse before the 'secrets' will naturally become open knowledge by rediscovery on part of the scientists and engineers of other countries.

  15. Concave nanomagnets with widely tunable anisotropy

    DOE Patents [OSTI]

    Lambson, Brian; Gu, Zheng; Carlton, David; Bokor, Jeffrey

    2014-07-01

    A nanomagnet having widely tunable anisotropy is disclosed. The disclosed nanomagnet is a magnetic particle with a convex shape having a first magnetically easy axis. The convex shape is modified to include at least one concavity to urge a second magnetically easy axis to form substantially offset from the first magnetically easy axis. In at least one embodiment, the convex shape is also modified to include at least one concavity to urge a second magnetically easy axis to form with a magnetic strength substantially different from the first magnetically easy axis.

  16. Atomic and electronic structures of SrTiO3/GaAs heterointerfaces: An 80-kV atomic-resolution electron energy-loss spectroscopy study

    SciTech Connect (OSTI)

    Qiao, Q.; Klie, Robert F; Ogut, Serdar; Idrobo Tapia, Juan C

    2012-01-01

    We have examined the atomic and electronic structures of epitaxially grown, ultrathin SrTiO{sub 3} (100) films on GaAs (001) using 80-kV aberration-corrected atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy (EELS) to develop a fundamental understanding of the interfacial structure-property relationships. We find that the interface is atomically abrupt and no surface reconstruction of the GaAs (001) surface is observed. Using atomic-column resolved EELS, we examine the oxygen vacancy and Ti concentrations in the SrTiO{sub 3} film and across the heterointerface. We show that Ti diffuses into the first few monolayers of GaAs. Using a combination of EELS and first-principles calculations, we present evidence for the formation of As oxides at the interface depending on the thin-film growth conditions. These findings are used to explain the differences in the transport behavior of the films.

  17. Influence of aluminium doping on thermoelectric performance of atomic layer deposited ZnO thin films

    SciTech Connect (OSTI)

    Ruoho, Mikko Pale, Ville; Erdmanis, Mikhail; Tittonen, Ilkka

    2013-11-11

    We study the effect of Al doping on thermoelectric power factor of ZnO films grown using atomic layer deposition method. The overall doping level is tuned by either varying the precursor pulsing sequence or by varying the number of precursor pulses while keeping the sequence unchanged. We observe that commonly utilized doping approach when periodic dopant layers are densely packed results in reduced power factor. At the same time, we find that thermoelectric performance can be improved by clustering the dopants. In addition, the clustering was found to tune the preferred crystal orientation of the polycrystalline film.

  18. Confocal Raman studies in determining crystalline nature of PECVD grown Si nanowires

    SciTech Connect (OSTI)

    Ahmed, Nafis; Bhargav, P. Balaji; Ramasamy, P.; Sivadasan, A. K.; Tyagi, A. K.; Dhara, S.; Amirthapandian, S.; Panigrahi, B. K.; Bhattacharya, S.

    2015-06-24

    Silicon nanowires of diameter ∼200 nm and length of 2-4 µm are grown in the plasma enhanced chemical vapour deposition technique using nanoclustered Au catalyst assisted vapour-liquid-solid process. The crystallinity in the as-grown and annealed samples is studied using confocal Raman spectroscopic studies. Amorphous phase is formed in the as-grown samples. Structural studies using high resolution transmission electron microscopy confirm the polycrystalline nature in the annealed sample.

  19. Atomic vapor laser isotope separation process

    DOE Patents [OSTI]

    Wyeth, R.W.; Paisner, J.A.; Story, T.

    1990-08-21

    A laser spectroscopy system is utilized in an atomic vapor laser isotope separation process. The system determines spectral components of an atomic vapor utilizing a laser heterodyne technique. 23 figs.

  20. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  1. The Atomic Energy Commission By Alice Buck

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atomic Energy Commission By Alice Buck July 1983 U.S. Department of Energy Office of Management Office of the Executive Secretariat Office of History and Heritage Resources 1 Introduction Almost a year after World War II ended, Congress established the United States Atomic Energy Commission to foster and control the peacetime development of atomic science and technology. Reflecting America's postwar optimism, Congress declared that atomic energy should be employed not only in the Nation's

  2. How Atomic Vibrations Transform Vanadium Dioxide

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    How Atomic Vibrations Transform Vanadium Dioxide How Atomic Vibrations Transform Vanadium Dioxide Calculations Confirm Material's Potential for Next-Generation Electronics, Energy November 10, 2014 Contact: Dawn Levy, levyd@ornl.gov, 865.576.6448 Budaivibe Vanadium atoms (blue) have unusually large thermal vibrations that stabilize the metallic state of a vanadium dioxide crystal. Red depicts oxygen atoms. Image credit: Oak Ridge National Laboratory For more than 50 years, scientists have

  3. High electron mobility thin-film transistors based on Ga{sub 2}O{sub 3} grown by atmospheric ultrasonic spray pyrolysis at low temperatures

    SciTech Connect (OSTI)

    Thomas, Stuart R. E-mail: thomas.anthopoulos@imperial.ac.uk; Lin, Yen-Hung; Faber, Hendrik; Anthopoulos, Thomas D. E-mail: thomas.anthopoulos@imperial.ac.uk; Adamopoulos, George; Sygellou, Labrini; Stratakis, Emmanuel; Pliatsikas, Nikos; Patsalas, Panos A.

    2014-09-01

    We report on thin-film transistors based on Ga{sub 2}O{sub 3} films grown by ultrasonic spray pyrolysis in ambient atmosphere at 400450?C. The elemental, electronic, optical, morphological, structural, and electrical properties of the films and devices were investigated using a range of complementary characterisation techniques, whilst the effects of post deposition annealing at higher temperature (700?C) were also investigated. Both as-grown and post-deposition annealed Ga{sub 2}O{sub 3} films are found to be slightly oxygen deficient, exceptionally smooth and exhibit a wide energy bandgap of ?4.9?eV. Transistors based on as-deposited Ga{sub 2}O{sub 3} films show n-type conductivity with the maximum electron mobility of ?2?cm{sup 2}/V s.

  4. Gauss Sum Factorization with Cold Atoms

    SciTech Connect (OSTI)

    Gilowski, M.; Wendrich, T.; Mueller, T.; Ertmer, W.; Rasel, E. M. [Institut fuer Quantenoptik, Leibniz Universitaet Hannover, Welfengarten 1, D-30167 Hannover (Germany); Jentsch, Ch. [Astrium GmbH-Satellites, 88039 Friedrichshafen (Germany); Schleich, W. P. [Institut fuer Quantenphysik, Universitaet Ulm, Albert-Einstein-Allee 11, D-89081 Ulm (Germany)

    2008-01-25

    We report the first implementation of a Gauss sum factorization algorithm by an internal state Ramsey interferometer using cold atoms. A sequence of appropriately designed light pulses interacts with an ensemble of cold rubidium atoms. The final population in the involved atomic levels determines a Gauss sum. With this technique we factor the number N=263193.

  5. Wide band stepped frequency ground penetrating radar

    DOE Patents [OSTI]

    Bashforth, M.B.; Gardner, D.; Patrick, D.; Lewallen, T.A.; Nammath, S.R.; Painter, K.D.; Vadnais, K.G.

    1996-03-12

    A wide band ground penetrating radar system is described embodying a method wherein a series of radio frequency signals is produced by a single radio frequency source and provided to a transmit antenna for transmission to a target and reflection therefrom to a receive antenna. A phase modulator modulates those portions of the radio frequency signals to be transmitted and the reflected modulated signal is combined in a mixer with the original radio frequency signal to produce a resultant signal which is demodulated to produce a series of direct current voltage signals, the envelope of which forms a cosine wave shaped plot which is processed by a Fast Fourier Transform Unit 44 into frequency domain data wherein the position of a preponderant frequency is indicative of distance to the target and magnitude is indicative of the signature of the target. 6 figs.

  6. Wide band stepped frequency ground penetrating radar

    DOE Patents [OSTI]

    Bashforth, Michael B.; Gardner, Duane; Patrick, Douglas; Lewallen, Tricia A.; Nammath, Sharyn R.; Painter, Kelly D.; Vadnais, Kenneth G.

    1996-01-01

    A wide band ground penetrating radar system (10) embodying a method wherein a series of radio frequency signals (60) is produced by a single radio frequency source (16) and provided to a transmit antenna (26) for transmission to a target (54) and reflection therefrom to a receive antenna (28). A phase modulator (18) modulates those portion of the radio frequency signals (62) to be transmitted and the reflected modulated signal (62) is combined in a mixer (34) with the original radio frequency signal (60) to produce a resultant signal (53) which is demodulated to produce a series of direct current voltage signals (66) the envelope of which forms a cosine wave shaped plot (68) which is processed by a Fast Fourier Transform unit 44 into frequency domain data (70) wherein the position of a preponderant frequency is indicative of distance to the target (54) and magnitude is indicative of the signature of the target (54).

  7. Plant Wide Assessment for SIFCO Industries, Inc.

    SciTech Connect (OSTI)

    Kelly Kissock, Arvind Thekdi et. al.

    2005-07-06

    Sifco Industries carreid out a plant wide energy assessment under a collaborative program with the U.S. Department of Energy during October 2004 to September 2005. During the year, personnel from EIS, E3M, DPS, BuyCastings.Com, and Sifco plant facilities and maintenance personnel, as a team collected energy use, construction, process, equipment and operational information about the plant. Based on this information, the team identified 13 energy savings opportunities. Near term savings opportunities have a total potential savings of about $1,329,000 per year and a combined simple payback of about 11 months. Implementation of these recommendations would reduce CO2 emissions by about 16,000,000 pounds per year, which would reduce overall plant CO2 emissions by about 45%. These totals do not include another $830,000 per year in potential savings with an estimated 9-month payback, from converting the forging hammers from steam to compressed air.

  8. Imaging spectrometer wide field catadioptric design

    DOE Patents [OSTI]

    Chrisp; Michael P.

    2008-08-19

    A wide field catadioptric imaging spectrometer with an immersive diffraction grating that compensates optical distortions. The catadioptric design has zero Petzval field curvature. The imaging spectrometer comprises an entrance slit for transmitting light, a system with a catadioptric lens and a dioptric lens for receiving the light and directing the light, an immersion grating, and a detector array. The entrance slit, the system for receiving the light, the immersion grating, and the detector array are positioned wherein the entrance slit transmits light to the system for receiving the light and the system for receiving the light directs the light to the immersion grating and the immersion grating receives the light and directs the light through the system for receiving the light to the detector array.

  9. Wide range radioactive gas concentration detector

    DOE Patents [OSTI]

    Anderson, David F.

    1984-01-01

    A wide range radioactive gas concentration detector and monitor which is capable of measuring radioactive gas concentrations over a range of eight orders of magnitude. The device of the present invention is designed to have an ionization chamber which is sufficiently small to give a fast response time for measuring radioactive gases but sufficiently large to provide accurate readings at low concentration levels. Closely spaced parallel plate grids provide a uniform electric field in the active region to improve the accuracy of measurements and reduce ion migration time so as to virtually eliminate errors due to ion recombination. The parallel plate grids are fabricated with a minimal surface area to reduce the effects of contamination resulting from absorption of contaminating materials on the surface of the grids. Additionally, the ionization chamber wall is spaced a sufficient distance from the active region of the ionization chamber to minimize contamination effects.

  10. Atomic Structure Calculations from the Los Alamos Atomic Physics Codes

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Cowan, R. D.

    The well known Hartree-Fock method of R.D. Cowan, developed at Los Alamos National Laboratory, is used for the atomic structure calculations. Electron impact excitation cross sections are calculated using either the distorted wave approximation (DWA) or the first order many body theory (FOMBT). Electron impact ionization cross sections can be calculated using the scaled hydrogenic method developed by Sampson and co-workers, the binary encounter method or the distorted wave method. Photoionization cross sections and, where appropriate, autoionizations are also calculated. Original manuals for the atomic structure code, the collisional excitation code, and the ionization code, are available from this website. Using the specialized interface, you will be able to define the ionization stage of an element and pick the initial and final configurations. You will be led through a series of web pages ending with a display of results in the form of cross sections, collision strengths or rates coefficients. Results are available in tabular and graphic form.

  11. Evidence that an internal carbonic anhydrase is present in 5% CO/sub 2/-grown and air-grown Chlamydomonas. [Chlamydomonas reinhardtii

    SciTech Connect (OSTI)

    Moroney, J.V.; Togasaki, R.K.; Husic, H.D.; Tolbert, N.E.

    1987-07-01

    Inorganic carbon (C/sub i/) uptake was measured in wild-type cells of Chlamydomonas reinhardtii, and in cia-3, a mutant strain of C. reinhardtii that cannot grow with air levels of CO/sub 2/. Both air-grown cells, that have a CO/sub 2/ concentrating system, and 5% CO/sub 2/-grown cells that do not have this system, were used. When the external pH was 5.1 or 7.3, air-grown, wild-type cells accumulated inorganic carbon (C/sub i/) and this accumulation was enhanced when the permeant carbonic anhydrase inhibitor, ethoxyzolamide, was added. When the external pH was 5.1, 5% CO/sub 2/-grown cells also accumulated some C/sub i/, although not as much as air-grown cells and this accumulation was stimulated by the addition of ethoxyzolamide. At the same time, ethoxyzolamide inhibited CO/sub 2/ fixation by high CO/sub 2/-grown, wild-type cells at both pH 5.1 and 7.3. These observations imply that 5% CO/sub 2/-grown, wild-type cells, have a physiologically important internal carbonic anhydrase, although the major carbonic anhydrase located in the periplasmic space is only present in air-grown cells. Inorganic carbon uptake by cia-3 cells supported this conclusion. This mutant strain, which is thought to lack an internal carbonic anhydrase, was unaffected by ethoxyzolamide at pH 5.1. Other physiological characteristics of cia-3 resemble those of wild-type cells that have been treated with ethoxyzolamide. It is concluded that an internal carbonic anhydrase is under different regulatory control than the periplasmic carbonic anhydrase.

  12. Wide Bandgap Semiconductors: Pursuing the Promise | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Wide Bandgap Semiconductors: Pursuing the Promise Wide Bandgap Semiconductors: Pursuing the Promise Wide bandgap semiconductor materials are more efficient than their silicon-based counterparts; making it possible to reduce weight, volume, and life-cycle costs in a wide range of power applications. Wide Bandgap Semiconductors: Pursuing the Promise (1.37 MB) More Documents & Publications Wide Bandgap Semiconductors for Clean Energy Workshop Vehicle Technologies Office Merit Review 2015:

  13. Bonded Radii and the Contraction of the Electron Density of the Oxygen Atom by Bonded Interactions

    SciTech Connect (OSTI)

    Gibbs, Gerald V.; Ross, Nancy L.; Cox, David F.; Rosso, Kevin M.; Iversen, Bo B.; Spackman, M. A.

    2013-02-21

    The bonded radii for more than 550 bonded pairs of atoms, comprising more than 50 crystals, determined from experimental and theoretical electron density distributions, are compared with the effective ionic, ri(M), and crystal radii, rc(M), for metal atoms, M, bonded to O atoms. At odds with the fixed ionic radius of 1.40 , assumed for the O atom in the compilation of the ionic radii, the bonded radius for the atom, rb(O), is not fixed but displays a relatively wide range of values as the O atom is progressively polarized by the M-O bonded interactions: as such, rb(O) decreases systematically from 1.40 (the Pauling radius of the oxide anion) as bond lengths decrease when bonded to an electropositive atom like sodium, to 0.64 (Braggs atomic radius of the O atom) when bonded to an electronegative atom like nitrogen. Both rb(M) and rb(O) increase in tandum with the increasing coordination number of the M atom. The bonded radii of the M atoms are highly correlated with both ri(M) and rc(M), but they both depart systematically from rb(M) and become smaller as the electronegativity of the M atom increases and the M-O bond length decreases. The well-developed correlations between both sets of radii and rb(M) testifies to the relative precision of both sets of radii and the fact that both sets are highly correlated the M-O bond 1 lengths. On the other hand, the progressive departure of rb(O) from the fixed ionic radius of the O atom with the increasing electronegativity of the bonded M atom indicates that any compilation of sets of ionic radii, assuming that the radius for the oxygen atom is fixed in value, is problematical and impacts on the accuracy of the resulting sets of ionic and crystal radii thus compiled. The assumption of a fixed O atom radius not only results in a negative ionic radii for several atoms, but it also results in values of rb(M) that are much as ~ 0.6 larger than the ri(M) and rc(M) values, respectively, particularly for the more

  14. QUANTUM MECHANICS, GENERAL PHYSICS; 74 ATOMIC AND MOLECULAR PHYSICS...

    Office of Scientific and Technical Information (OSTI)

    of model atoms in fields Milonni, P.W. 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 74 ATOMIC AND MOLECULAR PHYSICS; ATOMS; OPTICAL MODELS; QUANTUM MECHANICS;...

  15. Stable atomic structure of NiTi austenite

    SciTech Connect (OSTI)

    Zarkevich, Nikolai A; Johnson, Duane D

    2014-08-01

    Nitinol (NiTi), the most widely used shape-memory alloy, exhibits an austenite phase that has yet to be identified. The usually assumed austenitic structure is cubic B2, which has imaginary phonon modes, hence it is unstable. We suggest a stable austenitic structure that on average has B2 symmetry (observed by x-ray and neutron diffraction), but it exhibits finite atomic displacements from the ideal B2 sites. The proposed structure has a phonon spectrum that agrees with that from neutron scattering, has diffraction spectra in agreement with x-ray diffraction, and has an energy relative to the ground state that agrees with calorimetry data.

  16. Draft Site-Wide Environmental Impact Statement Nevada Summary...

    National Nuclear Security Administration (NNSA)

    Office of General Counsel National Environmental Policy Act (NEPA) NEPA Reading Room Draft Site-Wide Environmental Impact Statement Nevada Draft Site-Wide Environmental...

  17. DOE Issues Final Site-Wide Environmental Impact Statement for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Site-Wide Environmental Impact Statement for the Nevada National Security Site DOE Issues Final Site-Wide Environmental Impact Statement for the Nevada National Security Site...

  18. DOE Traineeship In Power Engineering (Leveraging Wide Bandgap...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DOE Traineeship In Power Engineering (Leveraging Wide Bandgap Power Electronics) DOE Traineeship In Power Engineering (Leveraging Wide Bandgap Power Electronics) July 20, 2015 -...

  19. Proposed Energy Transport Corridors: West-wide energy corridor...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Proposed Energy Transport Corridors: West-wide energy corridor programmatic EIS, Draft Corridors - September 2007. Proposed Energy Transport Corridors: West-wide energy corridor ...

  20. V -209:Cisco WAAS (Wide Area Application Services) Arbitrary...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    V -209:Cisco WAAS (Wide Area Application Services) Arbitrary Code Execution Vulnerabilities V -209:Cisco WAAS (Wide Area Application Services) Arbitrary Code Execution...

  1. AMO's New Institute Focused on Wide Bandgap Power Electronics...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Focused on Wide Bandgap Power Electronics Manufacturing AMO's New Institute Focused on Wide Bandgap Power Electronics Manufacturing January 15, 2014 - 11:34am Addthis The Next ...

  2. Guidance for Site-wide Environmental Impact Statements | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    guidance for Site-wide Environmental Impact Statements PDF icon Guidance for Site-wide Environmental Impact Statements More Documents & Publications Recommendations on...

  3. EIS-0309: Final Site-Wide Environmental Impact Statement | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Final Site-Wide Environmental Impact Statement EIS-0309: Final Site-Wide Environmental Impact Statement The Department of Energy (DOE) limits electronic access to certain NEPA ...

  4. EIS-0309: Draft Site-Wide Environmental Impact Statement | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Draft Site-Wide Environmental Impact Statement EIS-0309: Draft Site-Wide Environmental Impact Statement The Department of Energy (DOE) limits electronic access to certain NEPA ...

  5. Government-Wide Diversity and Inclusion Strategic Plan (2011...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Government-Wide Diversity and Inclusion Strategic Plan (2011), Office of Personnel Management Government-Wide Diversity and Inclusion Strategic Plan (2011), Office of Personnel ...

  6. DOE Announces Webinars on Zero Energy Ready Homes, Wide Bandgap...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    October 21: Live Webinar on Opportunities for Wide Bandgap Semiconductor Power Electronics ... "Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and ...

  7. Commonwealth Aluminum: Manufacturer Conducts Plant-Wide Energy...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Commonwealth Aluminum: Manufacturer Conducts Plant-Wide Energy Assessments at Two Aluminum Sheet Production Operations Commonwealth Aluminum: Manufacturer Conducts Plant-Wide ...

  8. APIVT-Grown Silicon Thin Layers and PV Devices: Preprint

    SciTech Connect (OSTI)

    Wang, T. H.; Ciszek, T. F.; Page, M. R.; Bauer, R. E.; Wang, Q.; Landry, M. D.

    2002-05-01

    Large-grained (5-20 ..mu..m) polycrystalline silicon layers have been grown at intermediate temperatures of 750-950C directly on foreign substrates without a seeding layer by iodine vapor transport at atmospheric pressure with rates as high as 3 mm/min. A model is constructed to explain the atypical temperature dependence of growth rate. We have also used this technique to grow high-quality epitaxial layers on heavily doped CZ-Si and on upgraded MG-Si substrates. Possible solar cell structures of thin-layer polycrystalline silicon on foreign substrates with light trapping have been examined, compared, and optimized by two-dimensional device simulations. The effects of grain boundary re-combination on device performance are presented for two grain sizes of 2 and 20 mm. We found that 104 cm/s recombination velocity is adequate for 20-m m grain-sized thin silicon, whereas a very low recombination velocity of 103 cm/s must be accomplished in order to achieve reasonable performance for a 2- mm grain-sized polycrystalline silicon device.

  9. Exceptional gettering response of epitaxially grown kerfless silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Powell, D. M.; Markevich, V. P.; Hofstetter, J.; Jensen, M. A.; Morishige, A. E.; Castellanos, S.; Lai, B.; Peaker, A. R.; Buonassisi, T.

    2016-02-08

    The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500 during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gettering response. Simulations and deep-level transient spectroscopy (DLTS) indicate that a high concentra- tion of point defects (likely Pt) is “locked in” during fast (60 C/min) cooling during epi wafer growth. The fine dispersion of moderately fast-diffusing recombination-active point defects limits as-grown lifetime but can also be removed during gettering, confirmed by DLTS measurements. Synchrotron-based X-ray fluorescence microscopy indicates metal agglomeratesmore » at structural defects, yet the structural defect density is sufficiently low to enable high lifetimes. Consequently, after phosphorus diffusion gettering, epi silicon exhibits a higher lifetime than materials with similar bulk impurity contents but higher densities of structural defects, including multicrystalline ingot and ribbon silicon materials. As a result, device simulations suggest a solar-cell efficiency potential of this material >23%.« less

  10. Properties of salt-grown uranium single crystals.

    SciTech Connect (OSTI)

    Cooley, J. C.; Hanrahan, R. J.; Hults, W. L.; Lashley, J. C.; Manley, M. E.; Mielke, C. H.; Smith, J. L.; Thoma, D. J.; Clark, R. G.; Hamilton, A. R.; O'Brien, J. L.; Gay, E. C.; Lumpkin, N. E.; McPheeters, C. C.; Willit, J.; Schmiedeshoff, G. M.; Touton, S.; Woodfield, B. F.; Lang, B. E.; Boerio-Goates, Juliana

    2001-01-01

    Recently single crystals of {alpha}-uranium were grown from a liquid salt bath. The electrical, magnetic and thermal properties of these crystals have been surveyed. The ratio of the room temperature resistivity of these crystals to the saturation value at low temperature is three times larger than any previously reported demonstrating that the crystals are of higher purity and quality than those in past work. The resistive signatures of the CDW transitions at 43, 37 and 22 K are obvious to the naked eye. The transition at 22 K exhibits temperature hysteresis that increases with magnetic field. In addition the superconducting transition temperature from resistivity is 820 mK and the critical field is 80 mT. Contrary to earlier work where the Debye temperature ranged from 186 to 218 K, the Debye temperature extracted from the heat capacity is 254 K in good agreement with the predicted value of 250 K. Magnetoresistance, Hall effect and magnetic susceptibility measurements are underway. In time, measurements made on these crystals may help us to understand the origin of superconductivity and its relation to the CDW transitions in pure uranium.

  11. Mexico: swapping crude for atoms

    SciTech Connect (OSTI)

    Navarro, B.

    1982-06-24

    Mexico, considered the Saudi Arabia of the Western Hemisphere because of its proven and potential petroleum reserves, has surprised the world: it has embarked on the biggest nuclear-electric program in the Third World, only to postpone it days before scheduled approval of an international bidding (on which the atomic energy industry had pinned its hopes). A graph shows Mexican supplies of electricity by source with official projections to 1990. The point of entrance of the first nuclear reactor, originally scheduled for 1982, won't come onstream until 1983; and how nuclear-generated electricity grows close to 5% of the total in 1990. The big question is, will the future President of Mexico give the green light to the atomic megaproject. And if he does, how will Mexico deal with the serious logistics problems and grave ecological implications confronting the industry worldwide. In this issue, the author and Energy Detente touch on these questions and review the nuclear power status of Mexico, as well as addressing some of its global problems. Also presented in this issue is an update of the fuel price/tax series for the Western Hemisphere countries.

  12. Sensing mode atomic force microscope

    DOE Patents [OSTI]

    Hough, Paul V. C.; Wang, Chengpu

    2006-08-22

    An atomic force microscope is described having a cantilever comprising a base and a probe tip on an end opposite the base; a cantilever drive device connected to the base; a magnetic material coupled to the probe tip, such that when an incrementally increasing magnetic field is applied to the magnetic material an incrementally increasing force will be applied to the probe tip; a moveable specimen base; and a controller constructed to obtain a profile height of a specimen at a point based upon a contact between the probe tip and a specimen, and measure an adhesion force between the probe tip and the specimen by, under control of a program, incrementally increasing an amount of a magnetic field until a release force, sufficient to break the contact, is applied. An imaging method for atomic force microscopy involving measuring a specimen profile height and adhesion force at multiple points within an area and concurrently displaying the profile and adhesion force for each of the points is also described. A microscope controller is also described and is constructed to, for a group of points, calculate a specimen height at a point based upon a cantilever deflection, a cantilever base position and a specimen piezo position; calculate an adhesion force between a probe tip and a specimen at the point by causing an incrementally increasing force to be applied to the probe tip until the probe tip separates from a specimen; and move the probe tip to a new point in the group.

  13. Sensing mode atomic force microscope

    DOE Patents [OSTI]

    Hough, Paul V. C.; Wang, Chengpu

    2003-01-01

    An atomic force microscope utilizes a pulse release system and improved method of operation to minimize contact forces between a probe tip affixed to a flexible cantilever and a specimen being measured. The pulse release system includes a magnetic particle affixed proximate the probe tip and an electromagnetic coil. When energized, the electromagnetic coil generates a magnetic field which applies a driving force on the magnetic particle sufficient to overcome adhesive forces exhibited between the probe tip and specimen. The atomic force microscope includes two independently displaceable piezo elements operable along a Z-axis. A controller drives the first Z-axis piezo element to provide a controlled approach between the probe tip and specimen up to a point of contact between the probe tip and specimen. The controller then drives the first Z-axis piezo element to withdraw the cantilever from the specimen. The controller also activates the pulse release system which drives the probe tip away from the specimen during withdrawal. Following withdrawal, the controller adjusts the height of the second Z-axis piezo element to maintain a substantially constant approach distance between successive samples.

  14. Sensing mode atomic force microscope

    DOE Patents [OSTI]

    Hough, Paul V.; Wang, Chengpu

    2004-11-16

    An atomic force microscope is described having a cantilever comprising a base and a probe tip on an end opposite the base; a cantilever drive device connected to the base; a magnetic material coupled to the probe tip, such that when an incrementally increasing magnetic field is applied to the magnetic material an incrementally increasing force will be applied to the probe tip; a moveable specimen base; and a controller constructed to obtain a profile height of a specimen at a point based upon a contact between the probe tip and a specimen, and measure an adhesion force between the probe tip and the specimen by, under control of a program, incrementally increasing an amount of a magnetic field until a release force, sufficient to break the contact, is applied. An imaging method for atomic force microscopy involving measuring a specimen profile height and adhesion force at multiple points within an area and concurrently displaying the profile and adhesion force for each of the points is also described. A microscope controller is also described and is constructed to, for a group of points, calculate a specimen height at a point based upon a cantilever deflection, a cantilever base position and a specimen piezo position; calculate an adhesion force between a probe tip and a specimen at the point by causing an incrementally increasing force to be applied to the probe tip until the probe tip separates from a specimen; and move the probe tip to a new point in the group.

  15. A Wide Field of View Plasma Spectrometer

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Skoug, Ruth M.; Funsten, Herbert O.; Moebius, Eberhard; Harper, Ron W.; Kihara, Keith H.; Bower, Jonathan S.

    2016-07-23

    Here we present a fundamentally new type of space plasma spectrometer, the wide field of view plasma spectrometer, whose field of view is >1.25π ster using fewer resources than traditional methods. The enabling component is analogous to a pinhole camera with an electrostatic energy-angle filter at the image plane. Particle energy-per-charge is selected with a tunable bias voltage applied to the filter plate relative to the pinhole aperture plate. For a given bias voltage, charged particles from different directions are focused by different angles to different locations. Particles with appropriate locations and angles can transit the filter plate and aremore » measured using a microchannel plate detector with a position-sensitive anode. Full energy and angle coverage are obtained using a single high-voltage power supply, resulting in considerable resource savings and allowing measurements at fast timescales. Lastly, we present laboratory prototype measurements and simulations demonstrating the instrument concept and discuss optimizations of the instrument design for application to space measurements.« less

  16. Final Report: Laser-Material Interactions Relevant to Analytic Spectroscopy of Wide Band Gap Materials

    SciTech Connect (OSTI)

    Dickinson, J. T.

    2014-04-05

    We summarize our studies aimed at developing an understanding of the underlying physics and chemistry in terms of laser materials interactions relevant to laser-based sampling and chemical analysis of wide bandgap materials. This work focused on the determination of mechanisms for the emission of electrons, ions, atoms, and molecules from laser irradiation of surfaces. We determined the important role of defects on these emissions, the thermal, chemical, and physical interactions responsible for matrix effects and mass-dependent transport/detection. This work supported development of new techniques and technology for the determination of trace elements contained such as nuclear waste materials.

  17. Truman Signs Atomic Energy Act | National Nuclear Security Administration |

    National Nuclear Security Administration (NNSA)

    (NNSA) Truman Signs Atomic Energy Act Truman Signs Atomic Energy Act Washington, DC President Truman signs the Atomic Energy Act of 1946, leading to the creation of the Atomic Energy Commission

  18. Wide Area Security Region Final Report

    SciTech Connect (OSTI)

    Makarov, Yuri V.; Lu, Shuai; Guo, Xinxin; Gronquist, James; Du, Pengwei; Nguyen, Tony B.; Burns, J. W.

    2010-03-31

    This report develops innovative and efficient methodologies and practical procedures to determine the wide-area security region of a power system, which take into consideration all types of system constraints including thermal, voltage, voltage stability, transient and potentially oscillatory stability limits in the system. The approach expands the idea of transmission system nomograms to a multidimensional case, involving multiple system limits and parameters such as transmission path constraints, zonal generation or load, etc., considered concurrently. The security region boundary is represented using its piecewise approximation with the help of linear inequalities (so called hyperplanes) in a multi-dimensional space, consisting of system parameters that are critical for security analyses. The goal of this approximation is to find a minimum set of hyperplanes that describe the boundary with a given accuracy. Methodologies are also developed to use the security hyperplanes, pre-calculated offline, to determine system security margins in real-time system operations, to identify weak elements in the system, and to calculate key contributing factors and sensitivities to determine the best system controls in real time and to assist in developing remedial actions and transmission system enhancements offline . A prototype program that automates the simulation procedures used to build the set of security hyperplanes has also been developed. The program makes it convenient to update the set of security hyperplanes necessitated by changes in system configurations. A prototype operational tool that uses the security hyperplanes to assess security margins and to calculate optimal control directions in real time has been built to demonstrate the project success. Numerical simulations have been conducted using the full-size Western Electricity Coordinating Council (WECC) system model, and they clearly demonstrated the feasibility and the effectiveness of the developed

  19. Hyperbaric Hydrothermal Atomic Force Microscope

    DOE Patents [OSTI]

    Knauss, Kevin G.; Boro, Carl O.; Higgins, Steven R.; Eggleston, Carrick M.

    2003-07-01

    A hyperbaric hydrothermal atomic force microscope (AFM) is provided to image solid surfaces in fluids, either liquid or gas, at pressures greater than normal atmospheric pressure. The sample can be heated and its surface imaged in aqueous solution at temperatures greater than 100.degree. C. with less than 1 nm vertical resolution. A gas pressurized microscope base chamber houses the stepper motor and piezoelectric scanner. A chemically inert, flexible membrane separates this base chamber from the sample cell environment and constrains a high temperature, pressurized liquid or gas in the sample cell while allowing movement of the scanner. The sample cell is designed for continuous flow of liquid or gas through the sample environment.

  20. Hyperbaric hydrothermal atomic force microscope

    DOE Patents [OSTI]

    Knauss, Kevin G.; Boro, Carl O.; Higgins, Steven R.; Eggleston, Carrick M.

    2002-01-01

    A hyperbaric hydrothermal atomic force microscope (AFM) is provided to image solid surfaces in fluids, either liquid or gas, at pressures greater than normal atmospheric pressure. The sample can be heated and its surface imaged in aqueous solution at temperatures greater than 100.degree. C. with less than 1 nm vertical resolution. A gas pressurized microscope base chamber houses the stepper motor and piezoelectric scanner. A chemically inert, flexible membrane separates this base chamber from the sample cell environment and constrains a high temperature, pressurized liquid or gas in the sample cell while allowing movement of the scanner. The sample cell is designed for continuous flow of liquid or gas through the sample environment.

  1. Optimization of some parameters of atomic steam-gas powerplant

    SciTech Connect (OSTI)

    Ratnikov, Y.F.

    1985-10-21

    Determination of optimum parameters of binary-type atomic steam-gas powerplant is a difficult analytical problem in view of the complicated interdependence of parameters, which characterize the reactor, gas-turbine, and steam-turbine parts of the installation. Conclusions include: 1) Determination of optimum parameters of atomic steam-gas installation is recommended to produce with gas consumption = const and heat output of the reactor = var. since best technical-economic indices of installation correspond to this case. 2) With increase in power of atomic steam-gas installation, together with improvement in economic indices, the optimum pressure ratio descends and optimum temperature of feed water increases. 3) Increase in the fuel component leads to a decrease of optimum pressure ratio and to increase in temperature of feed water. 4) Change of cost of reactor plant over wide limits virtually does not have effect on numerical values of optimum parameters being investigated. 5) In all cases optimum pressure ratio is more, and temperature of feed water is less than outer limits, obtained by thermodynamic calculations.

  2. The Manhattan Project: Making the Atomic Bomb | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    The Manhattan Project: Making the Atomic Bomb The Manhattan Project: Making the Atomic Bomb This report is an account of work on the atomic bomb. The Manhattan Project: Making the Atomic Bomb (6.17 MB) More Documents & Publications Gosling, The Manhattan Project: Making the Atomic Bomb The_Manhattan_Project_2010.pdf The Manhattan Project: Making of the Atomic Bomb

  3. Method for enhanced atomization of liquids

    DOE Patents [OSTI]

    Thompson, Richard E.; White, Jerome R.

    1993-01-01

    In a process for atomizing a slurry or liquid process stream in which a slurry or liquid is passed through a nozzle to provide a primary atomized process stream, an improvement which comprises subjecting the liquid or slurry process stream to microwave energy as the liquid or slurry process stream exits the nozzle, wherein sufficient microwave heating is provided to flash vaporize the primary atomized process stream.

  4. Atomicity violation detection using access interleaving invariants

    DOE Patents [OSTI]

    Zhou, Yuanyuan; Lu, Shan; Tucek, Joseph Andrew

    2013-09-10

    During execution of a program, the situation where the atomicity of a pair of instructions that are to be executed atomically is violated is identified, and a bug is detected as occurring in the program at the pair of instructions. The pairs of instructions that are to be executed atomically can be identified in different manners, such as by executing a program multiple times and using the results of those executions to automatically identify the pairs of instructions.

  5. Integrated Nanosystems for Atomically Precise Manufacturing Workshop -

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    August 5-6, 2015 | Department of Energy Nanosystems for Atomically Precise Manufacturing Workshop - August 5-6, 2015 Integrated Nanosystems for Atomically Precise Manufacturing Workshop - August 5-6, 2015 The US Department of Energy (DOE) Advanced Manufacturing Office (AMO) hosted a Workshop on Integrated Nanosystems for Atomically Precise Manufacturing (INFAPM) in Berkeley, California, August 5-6, 2015. DOE invited representatives from academia, national labs, the Executive Office of the

  6. Collisionally induced atomic clock shifts and correlations

    SciTech Connect (OSTI)

    Band, Y. B.; Osherov, I.

    2011-07-15

    We develop a formalism to incorporate exchange symmetry considerations into the calculation of collisional frequency shifts for atomic clocks using a density-matrix formalism. The formalism is developed for both fermionic and bosonic atomic clocks. Numerical results for a finite-temperature {sup 87}Sr {sup 1}S{sub 0} (F=9/2) atomic clock in a magic wavelength optical lattice are presented.

  7. Calculating Atomic Number Densities for Uranium

    Energy Science and Technology Software Center (OSTI)

    1993-01-01

    Provides method to calculate atomic number densities of selected uranium compounds and hydrogenous moderators for use in nuclear criticality safety analyses at gaseous diffusion uranium enrichment facilities.

  8. Atomic Scale Characterization of Compound Semiconductors using...

    Office of Scientific and Technical Information (OSTI)

    more fundamental understanding of carrier dynamics in photovoltaic (PV) device structures. ... Applying these improved analysis conditions to III-V based PV gives an atomic scale ...

  9. Manhattan Project: Adventures Inside the Atom

    Office of Scientific and Technical Information (OSTI)

    This publication was produced at the request of the the Assistant Manager for Public Education, Oak Ridge Operations Office, Atomic Energy Commission. It is reproduced here via the ...

  10. Circuits of Atoms on Wires of Light

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Circuits of Atoms on Wires of Light 1663 Los Alamos science and technology magazine Latest Issue:July 2016 past issues All Issues » submit Circuits of Atoms on Wires of Light A new kind of circuitry-with electrons on conducting wires replaced by atoms on paths of laser light-is ushering in an era of "atomtronic" technology. March 8, 2016 Artist visualization of atomic circuits Los Alamos scientists have developed a reliable new way to create atomtronic circuits with waves of

  11. Atomic Scale Characterization of Compound Semiconductors using...

    Office of Scientific and Technical Information (OSTI)

    Country of Publication: United States Language: English Subject: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ALLOYS; ATOMS; DATA ACQUISITION; DIFFUSION; FUNCTIONALS; HEAT FLUX; ...

  12. Optimizing Atomic Neighborhoods for Speedier Chemical Reactions...

    Office of Science (SC) Website

    processes involved in energy production and pollution control. Employing in-operation tools to atomic-level interactions in palladium-based catalysts enhances the discovery and...

  13. Atom-split it for nuclear energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    adjustments were provided by the 'Calutron Girls' Seaborg-Chairman of the Atomic Energy Commission 1961-1971; discovered many elements Buckyball-Buckminsterfullerene; 60...

  14. CERTIFICATION DOCKET WESTINGHOUSE ATOMIC POWER DEVELOPMENT PLANT

    Office of Legacy Management (LM)

    ... A survey cf the area of the "L' Building was performed and consisted of gamma-ray ... - Statement of Certification Westinghouse Atomic Power Development Plant East Pittsburgh ...

  15. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  16. Fact #928: June 6, 2016 Price Difference between Regular and Premium Gasoline Has Grown Each Year Since 2011- Dataset

    Broader source: Energy.gov [DOE]

    Excel file and dataset for Price Difference between Regular and Premium Gasoline Has Grown Each Year Since 2011

  17. Conduction of molecular electronic devices: Qualitative insights through atom-atom polarizabilities

    SciTech Connect (OSTI)

    Stuyver, T.; Fias, S. De Proft, F.; Geerlings, P.; Fowler, P. W.

    2015-03-07

    The atom-atom polarizability and the transmission probability at the Fermi level, as obtained through the source-and-sink-potential method for every possible configuration of contacts simultaneously, are compared for polycyclic aromatic compounds. This comparison leads to the conjecture that a positive atom-atom polarizability is a necessary condition for transmission to take place in alternant hydrocarbons without non-bonding orbitals and that the relative transmission probability for different configurations of the contacts can be predicted by analyzing the corresponding atom-atom polarizability. A theoretical link between the two considered properties is derived, leading to a mathematical explanation for the observed trends for transmission based on the atom-atom polarizability.

  18. Sub-Angstrom Atomic-Resolution Imaging of Heavy Atoms to Light...

    Office of Scientific and Technical Information (OSTI)

    of Heavy Atoms to Light Atoms Citation Details In-Document Search ... Publication Date: 2003-05-23 OSTI Identifier: 822959 Report Number(s): LBNL--52090 Journal ID: ISSN ...

  19. Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering

    SciTech Connect (OSTI)

    Mei, A. B.; Zhang, C.; Sardela, M.; Eckstein, J. N.; Rockett, A.; Howe, B. M.; Hultman, L.; Petrov, I.; Greene, J. E.

    2013-11-15

    Single-crystal ZrN films, 830 nm thick, are grown on MgO(001) at 450 °C by magnetically unbalanced reactive magnetron sputtering. The combination of high-resolution x-ray diffraction reciprocal lattice maps, high-resolution cross-sectional transmission electron microscopy, and selected-area electron diffraction shows that ZrN grows epitaxially on MgO(001) with a cube-on-cube orientational relationship, (001){sub ZrN}‖(001){sub MgO} and [100]{sub ZrN}‖[100]{sub MgO}. The layers are essentially fully relaxed with a lattice parameter of 0.4575 nm, in good agreement with reported results for bulk ZrN crystals. X-ray reflectivity results reveal that the films are completely dense with smooth surfaces (roughness = 1.3 nm, consistent with atomic-force microscopy analyses). Based on temperature-dependent electronic transport measurements, epitaxial ZrN/MgO(001) layers have a room-temperature resistivity ρ{sub 300K} of 12.0 μΩ-cm, a temperature coefficient of resistivity between 100 and 300 K of 5.6 × 10{sup −8}Ω-cm K{sup −1}, a residual resistivity ρ{sub o} below 30 K of 0.78 μΩ-cm (corresponding to a residual resistivity ratio ρ{sub 300Κ}/ρ{sub 15K} = 15), and the layers exhibit a superconducting transition temperature of 10.4 K. The relatively high residual resistivity ratio, combined with long in-plane and out-of-plane x-ray coherence lengths, ξ{sub ‖} = 18 nm and ξ{sub ⊥} = 161 nm, indicates high crystalline quality with low mosaicity. The reflectance of ZrN(001), as determined by variable-angle spectroscopic ellipsometry, decreases slowly from 95% at 1 eV to 90% at 2 eV with a reflectance edge at 3.04 eV. Interband transitions dominate the dielectric response above 2 eV. The ZrN(001) nanoindentation hardness and modulus are 22.7 ± 1.7 and 450 ± 25 GPa.

  20. Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

    SciTech Connect (OSTI)

    Bolat, S. E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, B.; Ozgit-Akgun, C.; Biyikli, N.; Okyay, A. K. E-mail: aokyay@ee.bilkent.edu.tr

    2014-06-16

    We report GaN thin film transistors (TFT) with a thermal budget below 250?C. GaN thin films are grown at 200?C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3?nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (I{sub ON}/I{sub OFF}) of 10{sup 3} and sub-threshold swing of 3.3?V/decade. The entire TFT device fabrication process temperature is below 250?C, which is the lowest process temperature reported for GaN based transistors, so far.

  1. Atomic magnetometer for human magnetoencephalograpy.

    SciTech Connect (OSTI)

    Schwindt, Peter; Johnson, Cort N.

    2010-12-01

    We have developed a high sensitivity (<5 fTesla/{radical}Hz), fiber-optically coupled magnetometer to detect magnetic fields produced by the human brain. This is the first demonstration of a noncryogenic sensor that could replace cryogenic superconducting quantum interference device (SQUID) magnetometers in magnetoencephalography (MEG) and is an important advance in realizing cost-effective MEG. Within the sensor, a rubidium vapor is optically pumped with 795 laser light while field-induced optical rotations are measured with 780 nm laser light. Both beams share a single optical axis to maximize simplicity and compactness. In collaboration with neuroscientists at The Mind Research Network in Albuquerque, NM, the evoked responses resulting from median nerve and auditory stimulation were recorded with the atomic magnetometer and a commercial SQUID-based MEG system with signals comparing favorably. Multi-sensor operation has been demonstrated with two AMs placed on opposite sides of the head. Straightforward miniaturization would enable high-density sensor arrays for whole-head magnetoencephalography.

  2. Atomic Layer Deposition | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic Layer Deposition New nanophase thin film materials with properties tailored to specifically meet the needs of industry New software simulates ALD over multiple length scale, saving industry time and money on developing specialized tools PDF icon Atomic_Layer_Deposition

  3. Y-12 Final Site-Wide Environmental Impact Statement Approved...

    National Nuclear Security Administration (NNSA)

    Blog Home Field Offices Welcome to the NNSA Production Office NPO News Releases Y-12 Final Site-Wide Environmental Impact Statement Approved Y-12 Final Site-Wide...

  4. Benefits of Site-wide NEPA National Environmental Policy Act...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Benefits of Site-wide NEPA National Environmental Policy Act Review (DOE, 1994) Benefits of Site-wide NEPA National Environmental Policy Act Review (DOE, 1994) The purpose of this ...

  5. Hydrogen atom temperature measured with wavelength-modulated laser absorption spectroscopy in large scale filament arc negative hydrogen ion source

    SciTech Connect (OSTI)

    Nakano, H. Goto, M.; Tsumori, K.; Kisaki, M.; Ikeda, K.; Nagaoka, K.; Osakabe, M.; Takeiri, Y.; Kaneko, O.; Nishiyama, S.; Sasaki, K.

    2015-04-08

    The velocity distribution function of hydrogen atoms is one of the useful parameters to understand particle dynamics from negative hydrogen production to extraction in a negative hydrogen ion source. Hydrogen atom temperature is one of the indicators of the velocity distribution function. To find a feasibility of hydrogen atom temperature measurement in large scale filament arc negative hydrogen ion source for fusion, a model calculation of wavelength-modulated laser absorption spectroscopy of the hydrogen Balmer alpha line was performed. By utilizing a wide range tunable diode laser, we successfully obtained the hydrogen atom temperature of ∼3000 K in the vicinity of the plasma grid electrode. The hydrogen atom temperature increases as well as the arc power, and becomes constant after decreasing with the filling of hydrogen gas pressure.

  6. Superexchange and iron valence control by off-stoichiometry in yttrium iron garnet thin films grown by pulsed laser deposition

    SciTech Connect (OSTI)

    Dumont, Y.; Keller, N.; Popova, E.; Schmool, D.S.; Bhattacharya, S.; Stahl, B.; Tessier, M.; Guyot, M.

    2005-05-15

    Controlled off-stoichiometric single phase polycrystalline yttrium iron garnet (YIG) thin films have been grown by pulsed laser deposition, adjusting the oxygen partial pressure P{sub O2} between 5 and 400 mTorr. Atomic stoichiometry by RBS shows an oxygen deficiency for P{sub O2}P{sub stoich}. P{sub stoich}=30 mTorr refers to films showing magnetic and structural properties of the bulk stoichiometric YIG. Curie temperature T{sub c} and saturation magnetization 4{pi}Ms decreased for P{sub O2}P{sub stoich}: Increase of Tc (up to +10%) and of 4{pi}Ms (up to +20%) and lattice parameter compression. Microscopic interpretation is given in terms of superexchange interaction and creation and site selectivity of iron vacancies.

  7. A continuous cold atomic beam interferometer

    SciTech Connect (OSTI)

    Xue, Hongbo; Feng, Yanying Yan, Xueshu; Jiang, Zhikun; Chen, Shu; Wang, Xiaojia; Zhou, Zhaoying

    2015-03-07

    We demonstrate an atom interferometer that uses a laser-cooled continuous beam of {sup 87}Rb atoms having velocities of 10–20 m/s. With spatially separated Raman beams to coherently manipulate the atomic wave packets, Mach–Zehnder interference fringes are observed at an interference distance of 2L = 19 mm. The apparatus operates within a small enclosed area of 0.07 mm{sup 2} at a bandwidth of 190 Hz with a deduced sensitivity of 7.8×10{sup −5} rad/s/√(Hz) for rotations. Using a low-velocity continuous atomic source in an atom interferometer enables high sampling rates and bandwidths without sacrificing sensitivity and compactness, which are important for applications in real dynamic environments.

  8. High data rate atom interferometric device

    SciTech Connect (OSTI)

    Biedermann, Grant; McGuinness, Hayden James Evans; Rakholia, Akash

    2015-07-21

    A light-pulse atomic interferometry (LPAI) apparatus is provided. The LPAI apparatus comprises a vessel, two sets of magnetic coils configured to magnetically confine an atomic vapor in two respective magneto-optical traps (MOTs) within the vessel when activated, and an optical system configured to irradiate the atomic vapor within the vessel with laser radiation that, when suitably tuned, can launch atoms previously confined in each of the MOTs toward the other MOT. In embodiments, the magnetic coils are configured to produce a magnetic field that is non-zero at the midpoint between the traps. In embodiments, the time-of-flight of the launched atoms from one MOT to the other is 12 ms or less. In embodiments, the MOTs are situated approximately 36 mm apart. In embodiments, the apparatus is configured to activate the magnetic coils according to a particular temporal magnetic field gradient profile.

  9. Response-time improved hydrothermal-method-grown ZnO scintillator...

    Office of Scientific and Technical Information (OSTI)

    Response-time improved hydrothermal-method-grown ZnO scintillator for soft x-ray free-electron laser timing-observation Citation Details In-Document Search Title: Response-time...

  10. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  11. Study of surface morphology and alignment of MWCNTs grown by chemical vapor deposition

    SciTech Connect (OSTI)

    Shukrullah, S. E-mail: noranimuti-mohamed@petronas.com.my Mohamed, N. M. E-mail: noranimuti-mohamed@petronas.com.my Shaharun, M. S. E-mail: noranimuti-mohamed@petronas.com.my; Yasar, M.

    2014-10-24

    In this research work, Multiwalled Carbon Nanotubes (MWCNTs) have been synthesized successfully by using floating catalytic chemical vapor deposition (FCCVD) method. Different ferrocene amounts (0.1, 0.125 and 0.15 g) were used as catalyst and ethylene was used as a carbon precursor at reaction temperature of 800°C. Characterization of the grown MWCNTs was carried out by using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The obtained data showed that the catalyst weight affects the nanotubes diameter, alignment, crystallinity and growth significantly, whereas negligible influence was noticed on CNTs forest length. The dense, uniform and meadow like patterns of grown CNTs were observed for 0.15 g ferrocene. The average diameter of the grown CNTs was found in the range of 32 to 75 nm. Close inspection of the TEM images also confirmed the defects in some of the grown CNTs, where few black spots were evident in CNTs structure.

  12. Alignment nature of ZnO nanowires grown on polished and nanoscale...

    Office of Scientific and Technical Information (OSTI)

    * Self-alignment of the nanowires due to step bunching of LiNbOsub 3 surface is ... As-grown ZnO nanowires exhibited a crisscross aligned growth pattern due to step bunching ...

  13. Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and Fuel Cell Applications | Department of Energy for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Download presentation slides from the DOE Fuel Cell Technologies Office webinar "Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications" held on October 21, 2014. Opportunities for Wide Bandgap

  14. EAC Recommendations for DOE Action Regarding Interconnection-Wide Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    - June 6, 2013 | Department of Energy Interconnection-Wide Planning - June 6, 2013 EAC Recommendations for DOE Action Regarding Interconnection-Wide Planning - June 6, 2013 EAC Recommendations for DOE Action Regarding Interconnection-Wide Planning, approved at the June 5-6, 2013 EAC Meeting. EAC Recommendations for DOE Action on Interconnection-Wide Planning - June 6, 2013 (147.93 KB) More Documents & Publications Electricity Advisory Committee Meeting Presentations October 2011 -

  15. Wide Area Thermal Processing of Light Emitting Materials

    SciTech Connect (OSTI)

    Duty, Chad E; Joshi, Pooran C; Jellison Jr, Gerald Earle; Angelini, Joseph Attilio; Sabau, Adrian S

    2011-10-01

    Laboratory laser materials synthesis of wide bandgap materials has been successfully used to create white light emitting materials (LEMs). This technology development has progressed to the exploration on design and construction of apparatus for wide area doping and phase transformation of wide bandgap material substrates. The objective of this proposal is to develop concepts for wide area doping and phase transformation based on AppliCote Associates, LLC laser technology and ORNL high density pulsed plasma arc technology.

  16. EA-1914: Draft Site-Wide Environmental Assessment

    Broader source: Energy.gov [DOE]

    National Renewable Energy Laboratory (NREL) National Wind Technology Center (NWTC) Site-Wide Environmental Assessment, Golden, Colorado

  17. EA-1914: Final Site-Wide Environmental Assessment

    Broader source: Energy.gov [DOE]

    National Renewable Energy Laboratory (NREL) National Wind Technology Center (NWTC) Site-Wide Environmental Assessment, Golden, Colorado

  18. EA-1968: Final Site-Wide Environmental Assessment

    Broader source: Energy.gov [DOE]

    National Renewable Energy Laboratory (NREL) South Table Mountain (STM) Campus Site-Wide Environmental Assessment, Golden, Colorado

  19. Double capping of molecular beam epitaxy grown InAs/InP quantum dots studied by cross-sectional scanning tunneling microscopy

    SciTech Connect (OSTI)

    Ulloa, J. M.; Koenraad, P. M.; Gapihan, E.; Letoublon, A.; Bertru, N.

    2007-08-13

    Cross-sectional scanning tunneling microscopy was used to study at the atomic scale the double capping process of self-assembled InAs/InP quantum dots (QDs) grown by molecular beam epitaxy on a (311)B substrate. The thickness of the first capping layer is found to play a mayor role in determining the final results of the process. For first capping layers up to 3.5 nm, the height of the QDs correspond to the thickness of the first capping layer. Nevertheless, for thicknesses higher than 3.5 nm, a reduction in the dot height compared to the thickness of the first capping layer is observed. These results are interpreted in terms of a transition from a double capping to a classical capping process when the first capping layer is thick enough to completely cover the dots.

  20. Domain formation due to surface steps in topological insulator Bi{sub 2}Te{sub 3} thin films grown on Si (111) by molecular beam epitaxy

    SciTech Connect (OSTI)

    Borisova, S.; Kampmeier, J.; Mussler, G.; Grützmacher, D.; Jülich Aachen Research Alliance, Fundamentals of Future Information Technologies, Jülich 52425 ; Luysberg, M.

    2013-08-19

    The atomic structure of topological insulators Bi{sub 2}Te{sub 3} thin films on Si (111) substrates grown in van der Waals mode by molecular beam epitaxy has been investigated by in situ scanning tunneling microscopy and scanning transmission electron microscopy. Besides single and multiple quintuple layer (QL) steps, which are typical for the step-flow mode of growth, a number of 0.4 QL steps is observed. We determine that these steps originate from single steps at the substrate surface causing domain boundaries in the Bi{sub 2}Te{sub 3} film. Due to the peculiar structure of these domain boundaries the domains are stable and penetrate throughout the entire film.

  1. Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al{sub 2}O{sub 3}(0001) substrates

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

    2007-05-01

    Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al{sub 2}O{sub 3}(0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively.

  2. Element-specific study of epitaxial NiO/Ag/CoO/Fe films grown on vicinal Ag(001) using photoemission electron microscopy

    SciTech Connect (OSTI)

    Meng, Y.; Li, J.; Tan, A.; Jin, E.; Son, J.; Park, J. S.; Doran, A.; Young, A. T.; Scholl, A.; Arenholz, E.; Wu, J.; Hwang, C.; Zhao, H. W.; Qiu, Z. Q.

    2011-01-10

    NiO/Ag/CoO/Fe single crystalline films are grown epitaxially on a vicinal Ag(001) substrate using molecular beam epitaxy and investigated by photoemission electron microscopy. We find that after zero-field cooling, the in-plane Fe magnetization switches from parallel to perpendicular direction of the atomic steps of the vicinal surface at thinner CoO thickness but remains in its original direction parallel to the steps at thicker CoO thickness. CoO and NiO domain imaging result shows that both CoO/Fe and NiO/CoO spins are perpendicularly coupled, suggesting that the Fe magnetization switching may be associated with the rotatable-frozen spin transition of the CoO film.

  3. Effect of Al-mole fraction in Al{sub x}Ga{sub 1−x}N grown by MOCVD

    SciTech Connect (OSTI)

    Jayasakthi, M. Ramesh, R. Prabakaran, K. Loganathan, R. Kuppulingam, B. Balaji, M. Arivazhagan, P. Sankaranarayanan, S. Singh, Shubra Baskar, K.

    2014-04-24

    AlGaN/AlN layers were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The Al{sub x}Ga{sub 1−x}N layer composition was varied from 15% to 25%. The crystalline quality, thickness and aluminum (Al) composition of AlGaN were determined using high resolution X-ray diffraction (HRXRD). The growth rate decreases on increasing Al composition. Reciprocal space mapping (RSM) was used to estimate the strain and relaxation between AlGaN and AlN. The optical properties of AlGaN layers were investigated by room temperature Photoluminescence (PL). The AlGaN peak shifts towards lower wavelength with Al composition. The surface morphology of AlGaN was studied by atomic force microscopy (AFM). Root mean square (RMS) roughness values were found to be increased in AlGaN layers with composition.

  4. Suppression of metastable-phase inclusion in N-polar (0001{sup }) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

    SciTech Connect (OSTI)

    Shojiki, Kanako Iwabuchi, Takuya; Kuboya, Shigeyuki; Choi, Jung-Hun; Tanikawa, Tomoyuki; Hanada, Takashi; Katayama, Ryuji; Matsuoka, Takashi; Usami, Noritaka

    2015-06-01

    The metastable zincblende (ZB) phase in N-polar (0001{sup }) (?c-plane) InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy is elucidated by the electron backscatter diffraction measurements. From the comparison between the ?c-plane and Ga-polar (0001) (+c-plane), the ?c-plane MQWs were found to be suffered from the severe ZB-phase inclusion, while ZB-inclusion is negligible in the +c-plane MQWs grown under the same growth conditions. The ZB-phase inclusion is a hurdle for fabricating the ?c-plane light-emitting diodes because the islands with a triangular shape appeared on a surface in the ZB-phase domains. To improve the purity of stable wurtzite (WZ)-phase, the optimum conditions were investigated. The ZB-phase is dramatically eliminated with decreasing the V/III ratio and increasing the growth temperature. To obtain much-higher-quality MQWs, the thinner InGaN wells and the hydrogen introduction during GaN barriers growth were tried. Consequently, MQWs with almost pure WZ phase and with atomically smooth surface have been demonstrated.

  5. Photochemical Properties, Composition, and Structure in Molecular Beam Epitaxy Grown Fe Doped and (Fe,N) Codoped Rutile TiO2(110)

    SciTech Connect (OSTI)

    Mangham, Andrew N.; Govind, Niranjan; Bowden, Mark E.; Shutthanandan, V.; Joly, Alan G.; Henderson, Michael A.; Chambers, Scott A.

    2011-08-11

    We have investigated the surface photochemical properties of Fe "doped" and (Fe,N) co-doped homoepitaxial rutile TiO2 (110) films grown by plasma assisted molecular beam epitaxy. Fe does not incorporate as an electronic dopant in the rutile lattice, but rather segregates to the film surface. However, co-deposition of Fe with N enhances the solubility of Fe, and DFT calculations suggest that co-dopant complex formation is the driving force behind the enhanced solubility. The co-doped films, in which a few atomic percent of Ti (O) are replaced with Fe (N), exhibit significant disorder compared to undoped films grown under the same conditions, presumably due to dopant-induced strain. Co-doping redshifts the rutile bandgap into the visible. However, the film surfaces are photochemically inert with respect to hole-mediated decomposition of adsorbed trimethyl acetate. The absence of photochemical activity may result from dopant-induced trap and/or recombination sites within the film. This study indicates that enhanced visible light absorptivity in TiO2 does not necessarily result in visible light initiated surface photochemistry.

  6. Growth temperature effect on the structural and magnetic properties of Fe{sub 3}O{sub 4} films grown by the self-template method

    SciTech Connect (OSTI)

    Takahashi, R. Misumi, H.; Lippmaa, M.

    2014-07-21

    We have investigated the effect of growth temperature on the structure, surface morphology, and magnetic properties of Fe{sub 3}O{sub 4} thin films grown on SrTiO{sub 3}(001) substrates by a self-template method. To eliminate the intermixing of (001) and (111) orientations that usually occurs in spinel films grown on perovskite substrates, a thin self-template layer of (001)-oriented Fe{sub 3}O{sub 4} was deposited on a SrTiO{sub 3}(001) substrate at 400 °C prior to the main film growth at temperatures of up to 1100 °C. Increasing the growth temperature from 400 °C to 1100 °C resulted in greatly improved crystallinity of the Fe{sub 3}O{sub 4} thin films, with the rocking curve width dropping from 1.41° to 0.28°. Surface analysis by atomic force microscopy showed that raising the growth temperature increased the grain size and the surface roughness, ultimately leading to the formation of regular nanopyramid arrays at 1100 °C. The surface roughening and pyramid formation are caused by the dominance of the lowest surface energy spinel (111) crystal facet. The nanopyramids were fully relaxed but still perfectly (001)-oriented in the out-of-plane direction. The largest pyramids had the lowest coercivity due to a reduction of the demagnetization effect.

  7. The Manhattan Project: Making the atomic bomb

    SciTech Connect (OSTI)

    Gosling, F.G.

    1994-09-01

    This article is a short history of the origins and development of the American atomic bomb program during World War II. Beginning with the scientific developments of the pre-war years, the monograph details the role of US government in conducting a secret, nationwide enterprise that took science from the laboratory and into combat with an entirely new type of weapon. The monograph concludes with a discussion of the immediate postwar period, the debate over the Atomic Energy Act of 1946, and the founding of the Atomic Energy Commission.

  8. 1982 bibliography of atomic and molecular processes

    SciTech Connect (OSTI)

    Barnett, C.F.; Crandall, D.H.; Gilbody, H.B.; Gregory, D.C.; Kirkpatrick, M.I.; McDaniel, E.W.; McKnight, R.H.; Meyer, F.W.; Morgan, T.J.; Phaneuf, R.A.

    1984-05-01

    This annotated bibliography includes papers on atomic and molecular processes published during 1982. Sources include scientific journals, conference proceedings, and books. Each entry is designated by one or more of the 114 categories of atomic and molecular processes used by the Controlled Fusion Atomic Data Center, Oak Ridge National Laboratory to classify data. Also indicated is whether the work was experimental or theoretical, what energy range was covered, what reactants were investigated, and the country of origin of the first author. Following the bibliographical listing, the entries are indexed according to the categories and according to reactants within each subcategory.

  9. SECTION IV: ATOMIC AND MOLECULAR SCIENCE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    IV: ATOMIC AND MOLECULAR SCIENCE A Pyroelectric Crystal Particle Accelerator ....................................................................................................................................................IV-1 J. Kalodimos and R.L. Watson Polarization of Ka Satellite Transitions in Potassium .....................................................................................................................................IV-4 K. S. Fruchey, R.L. Watson, V. Horvat, and Yong

  10. Network Optimization Models (RNAS and ATOM) | NISAC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    been used to study policy options concerning the movement of toxic chemicals by rail. Air Transport Optimization Model (ATOM) The TOM is a network-optimization model designed to...

  11. SECTION IV: ATOMIC, MOLECULAR AND MATERIALS SCIENCE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ATOMIC, MOLECULAR AND MATERIALS SCIENCE A semiempirical scaling law for target K x-ray production in heavy ion collisions...... IV-1 R. L. Watson, Y. Peng, V. Horvat, and A. ...

  12. New analogies between extreme QCD and cold atoms

    SciTech Connect (OSTI)

    Nishida, Yusuke

    2012-08-15

    We discuss two new analogies between extreme QCD and cold atoms. One is the analogue of 'hard probes' in cold atoms. The other is the analogue of 'quark-hadron continuity' in cold atoms.

  13. August 1, 1946: Atomic Energy Act | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    August 1, 1946: Atomic Energy Act August 1, 1946 President Truman signs the Atomic Energy Act of 1946. On January 1, 1947, all atomic energy activities are transferred to the newly ...

  14. Single-charge detection by an atomic precision tunnel junction

    SciTech Connect (OSTI)

    House, M. G. Peretz, E.; Keizer, J. G.; Hile, S. J.; Simmons, M. Y.

    2014-03-17

    We demonstrate sensitive detection of single charges using a planar tunnel junction 8.5?nm wide and 17.2?nm long defined by an atomically precise phosphorus doping profile in silicon. The conductance of the junction responds to a nearby gate potential and also to changes in the charge state of a quantum dot patterned 52?nm away. The response of this detector is monotonic across the entire working voltage range of the device, which will make it particularly useful for studying systems of multiple quantum dots. The charge sensitivity is maximized when the junction is most conductive, suggesting that more sensitive detection can be achieved by shortening the length of the junction to increase its conductance.

  15. Atomic and molecular physics and data activities for astrophysics at Oak Ridge National Laboratory

    SciTech Connect (OSTI)

    Jeffery, D.J.; Kristic, P.S.; Liu, W.; Schultz, D.R.; Stancil, P.C.

    1998-04-01

    The atomic astrophysics group at ORNL produces, collects, evaluates, and disseminates atomic and molecular data relevant to astrophysics and actively models various astrophysical environments utilizing this information. With the advent of the World Wide Web, these data are also being placed on-line to facilitate their use by end-users. In this brief report, the group`s recent activities in data production and in modeling are highlighted. For example, the authors describe recent calculations of elastic and transport cross sections relevant to ionospheric and heliospheric studies, charge transfer between metal ions and metal atoms and novel supernova nebular spectra modeling, ion-molecule collision data relevant to planetary atmospheres and comets, and data for early universe modeling.

  16. Atomic resolution images of graphite in air

    SciTech Connect (OSTI)

    Grigg, D.A.; Shedd, G.M.; Griffis, D.; Russell, P.E.

    1988-12-01

    One sample used for proof of operation for atomic resolution in STM is highly oriented pyrolytic graphite (HOPG). This sample has been imaged with many different STM`s obtaining similar results. Atomic resolution images of HOPG have now been obtained using an STM designed and built at the Precision Engineering Center. This paper discusses the theoretical predictions and experimental results obtained in imaging of HOPG.

  17. CERTIFICATION DOCKET WESTINGHOUSE ATOMIC POWER DEVELOPMENT PLANT

    Office of Legacy Management (LM)

    WESTINGHOUSE ATOMIC POWER DEVELOPMENT PLANT EAST PITTSBURGH PLANT FOREST HILLS PITTSBURGH, PENNSYLVANIA Department of Energy Office of Nuclear Energy Office of Terminal Waste Disposal and Remedial Action Division of Remedial Action Projects ..-.. --__- _".-.-l--_--l -_._ _- --- ~~~. . ..~ CONTENTS Page - - I NTRODUCTI ON 1 Purpose 1 Docket Contents 1 Exhibit I: Summary of Activities at Westinghouse Atomic Power Development Plant, East Pittsburgh Plant, Forest Hills, Pittsburgh, Pennsylvania

  18. Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization

    SciTech Connect (OSTI)

    Kraus, Theodore J.; Nepomnyashchii, Alexander B.; Parkinson, B. A.

    2015-01-15

    Atomic layer deposition was used to grow epitaxial layers of anatase (001) TiO{sub 2} on the surface of SrTiO{sub 3} (100) crystals with a 3% lattice mismatch. The epilayers grow as anatase (001) as confirmed by x-ray diffraction. Atomic force microscope images of deposited films showed epitaxial layer-by-layer growth up to about 10 nm, whereas thicker films, of up to 32 nm, revealed the formation of 2–5 nm anatase nanocrystallites oriented in the (001) direction. The anatase epilayers were used as substrates for dye sensitization. The as received strontium titanate crystal was not sensitized with a ruthenium-based dye (N3) or a thiacyanine dye (G15); however, photocurrent from excited state electron injection from these dyes was observed when adsorbed on the anatase epilayers. These results show that highly ordered anatase surfaces can be grown on an easily obtained substrate crystal.

  19. Scanning magnetoresistance microscopy of atom chips

    SciTech Connect (OSTI)

    Volk, M.; Whitlock, S.; Wolff, C. H.; Hall, B. V.; Sidorov, A. I.

    2008-02-15

    Surface based geometries of microfabricated wires or patterned magnetic films can be used to magnetically trap and manipulate ultracold neutral atoms or Bose-Einstein condensates. We investigate the magnetic properties of such atom chips using a scanning magnetoresistive (MR) microscope with high spatial resolution and high field sensitivity. By comparing MR scans of a permanent magnetic atom chip to field profiles obtained using ultracold atoms, we show that MR sensors are ideally suited to observe small variations of the magnetic field caused by imperfections in the wires or magnetic materials which ultimately lead to fragmentation of ultracold atom clouds. Measurements are also provided for the magnetic field produced by a thin current-carrying wire with small geometric modulations along the edge. Comparisons of our measurements with a full numeric calculation of the current flow in the wire and the subsequent magnetic field show excellent agreement. Our results highlight the use of scanning MR microscopy as a convenient and powerful technique for precisely characterizing the magnetic fields produced near the surface of atom chips.

  20. The Los Alamos suite of relativistic atomic physics codes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Fontes, C. J.; Zhang, H. L.; Jr, J. Abdallah; Clark, R. E. H.; Kilcrease, D. P.; Colgan, J.; Cunningham, R. T.; Hakel, P.; Magee, N. H.; Sherrill, M. E.

    2015-05-28

    The Los Alamos SuitE of Relativistic (LASER) atomic physics codes is a robust, mature platform that has been used to model highly charged ions in a variety of ways. The suite includes capabilities for calculating data related to fundamental atomic structure, as well as the processes of photoexcitation, electron-impact excitation and ionization, photoionization and autoionization within a consistent framework. These data can be of a basic nature, such as cross sections and collision strengths, which are useful in making predictions that can be compared with experiments to test fundamental theories of highly charged ions, such as quantum electrodynamics. The suitemore » can also be used to generate detailed models of energy levels and rate coefficients, and to apply them in the collisional-radiative modeling of plasmas over a wide range of conditions. Such modeling is useful, for example, in the interpretation of spectra generated by a variety of plasmas. In this work, we provide a brief overview of the capabilities within the Los Alamos relativistic suite along with some examples of its application to the modeling of highly charged ions.« less

  1. Vehicle Technologies Office Issues Notice of Intent for Program Wide

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Funding Opportunity Announcement | Department of Energy Program Wide Funding Opportunity Announcement Vehicle Technologies Office Issues Notice of Intent for Program Wide Funding Opportunity Announcement December 18, 2015 - 1:10pm Addthis The Vehicle Technologies Office has issued a Notice of Intent (No. DE-FOA-0001462) to make interested parties aware of its plan to issue a Funding Opportunity Announcement (FOA) entitled "FY 2016 Vehicle Technologies Program-Wide Funding Opportunity

  2. Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Hydrogen and Fuel Cell Applications | Department of Energy Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Below is the text version of the webinar titled "Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications," originally presented on October 21, 2014. In addition to

  3. Wide Bandgap Semiconductors for Clean Energy Workshop | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Workshops » Wide Bandgap Semiconductors for Clean Energy Workshop Wide Bandgap Semiconductors for Clean Energy Workshop July 25, 2012 A workshop on Wide Bandgap (WBG) Semiconductors for Clean Energy (held July 25, 2012, in Chicago, Illinois) brought together stakeholders from industry and academia to discuss the technical status of WBG semiconductors. The workshop also explored emerging WBG market applications in clean energy and barriers to the development and widespread commercial

  4. Draft Site-Wide Environmental Impact Statement Nevada | National Nuclear

    National Nuclear Security Administration (NNSA)

    Security Administration | (NNSA) Draft Site-Wide Environmental Impact Statement Nevada Draft site-wide environmental impact statement for the continued operation of the DOE/NNSA Nevada National Security Site and off-site locations in the State of Nevada The U.S. Department of Energy (DOE), National Nuclear Security Administration (NNSA) is pleased to present the "Draft Site-Wide Environmental Impact Statement for the Continued Operation of the Department of Energy/National Nuclear

  5. Radioactive Waste Management Complex Wide Review | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Radioactive Waste Management Complex Wide Review Radioactive Waste Management Complex Wide Review The main goal of this complex-wide review was to obtain feedback from DOE sites and Headquarters Program Offices on the effectiveness and workability of DOE Order 435.1 and its associated Manual and Guides as the Office of Environmental Management (EM) moves forward in updating the Order to ensure its continued protection of the public, workers, and the environment. Radioactive Waste Management

  6. DOE-Wide NEPA Contracting | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    DOE-Wide NEPA Contracting DOE-Wide NEPA Contracting The DOE-wide NEPA contracts expired in 2014. These contracts were for NEPA support services in preparing EISs and EAs and other environmental documents. This page will be updated when new information is available. Inquiries may be addressed to askNEPA@hq.doe.gov. Document(s) Available For Download December 1, 1996 NEPA Contracting Reform Guidance (DOE, 1996) This guidance provides: model statements of work, information on contract types and

  7. Wide Bandgap Semiconductors: Essential to Our Technology Future |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Wide Bandgap Semiconductors: Essential to Our Technology Future Wide Bandgap Semiconductors: Essential to Our Technology Future January 15, 2014 - 8:00am Addthis Learn how wide bandgap semiconductors could impact clean energy technology and our daily lives. | Video by Sarah Gerrity and Matty Greene, Energy Department. Dr. Ernest Moniz Dr. Ernest Moniz Secretary of Energy What are the key facts? North Carolina State University will lead the Energy Department's new

  8. Interconnection-Wide Transmission Planning Initiative: Topic A,

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Interconnection-Level Analysis and Planning | Department of Energy A, Interconnection-Level Analysis and Planning Interconnection-Wide Transmission Planning Initiative: Topic A, Interconnection-Level Analysis and Planning A description of the requirements for Topic A for all Interconnections under the Interconnection-Wide Transmission Planning Initiative, part of the American Recovery and Reinvestment Act. Interconnection-Wide Transmission Planning Initiative: Topic A, Interconnection-Level

  9. Nanomanipulation and nanofabrication with multi-probe STM: From individual atoms to nanowires

    SciTech Connect (OSTI)

    Qin, Shengyong; Kim, Tae Hwan; Wang, Zhouhang; Li, An-Ping

    2012-01-01

    The wide variety of nanoscale structures and devices demands novel tools for handling, assembly, and fabrication at nanoscopic positioning precision. The manipulation tools should allow for in situ characterization and testing of fundamental building blocks, such as nanotubes and nanowires, as they are built into functional devices. In this paper, a bottom-up technique for nanomanipulation and nanofabrication is reported by using a 4-probe scanning tunneling microscope (STM) combined with a scanning electron microscope (SEM). The applications of this technique are demonstrated in a variety of nanosystems, from manipulating individual atoms to bending, cutting, breaking carbon nanofibers, and constructing nanodevices for electrical characterizations. The combination of the wide field of view of SEM, the atomic position resolution of STM, and the flexibility of multiple scanning probes is expected to be a valuable tool for rapid prototyping in the nanoscience and nanotechnology.

  10. Sandia National Laboratories Site-Wide Environmental Impact Statement...

    National Nuclear Security Administration (NNSA)

    Office of General Counsel National Environmental Policy Act (NEPA) NEPA Reading Room Sandia National Laboratories Site-Wide Environmental Impact Statement Sandia National...

  11. Genome Wide Evaluation of Normal Human Tissue in Response to...

    Office of Scientific and Technical Information (OSTI)

    Wide Evaluation of Normal Human Tissue in Response to Controlled, In vivo Low-Dose Low LET Ionizing Radiation Exposure: Pathways and Mechanisms Final Report, September 2013 Rocke,...

  12. Language barrier broken with Multilingual WorldWideScience.org...

    Office of Scientific and Technical Information (OSTI)

    Hey, Microsoft Research Corporate Vice-President; Richard Boulderstone of the British Library and the WorldWideScience Alliance Chairman; and Wu Yishan, Institute of Scientific and ...

  13. Microfabricated BTU monitoring device for system-wide natural...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: Microfabricated BTU monitoring device for system-wide natural gas monitoring. Citation Details In-Document Search Title: Microfabricated BTU monitoring device for ...

  14. EA-1956: Site-Wide Environmental Assessment for the Divestiture...

    Office of Environmental Management (EM)

    Assessment for the Divestiture of Rocky Mountain Oilfield Testing Center and Naval Petroleum Reserve No. 3, Natrona County, Wyoming EA-1956: Site-Wide Environmental Assessment...

  15. Fiscal Year 2015 Vehicle Technologies Program Wide Funding Opportunity...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Fiscal Year 2015 Vehicle Technologies Program Wide Funding Opportunity Announcement Selections The list of 24 awardees given funds to develop and deploy cutting-edge vehicle ...

  16. Webinar October 21: Opportunities for Wide Bandgap Semiconductor...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Articles DOE Announces Webinars on High Performance Space Conditioning Systems, Davis-Bacon Act Compliance, and More DOE Announces Webinars on Zero Energy Ready Homes, Wide...

  17. EIS-0238: Draft Site-Wide Environmental Impact Statement

    Broader source: Energy.gov [DOE]

    Draft Site-Wide Environmental Impact Statement on the Continued Operation of the Los Alamos National Laboratory, Los Alamos, New Mexico

  18. EIS-0426: Site-Wide Environmental Impact Statement for Continued...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Site-Wide Environmental Impact Statement for Continued Operation of the Department of Energy National Nuclear Security Administration Nevada National Security Site and Off-Site ...

  19. EA-1440: Final Site-Wide Environmental Assessment | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    alternative energy research. These improvements are needed to allow for growth of NREL's research programs. DOEEA-1440 Final Site-Wide Environmental Assessment of the ...

  20. Guidance for Site-wide Environmental Impact Statements (DOE,...

    Office of Environmental Management (EM)

    Recommendations on Alternative Analysis in Site-wide NEPA Reviews (DOE, 1992) EIS-0225: Amended Notice of Intent to Prepare an Environmental Impact Statement EIS-0225-SA-03: ...

  1. EIS-0281: Final Site-Wide Environmental Impact Statement | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    EIS-0281: Final Site-Wide Environmental Impact Statement Sandia National LaboratoriesNew Mexico DOE proposes to continue operating the Sandia National LaboratoriesNew Mexico ...

  2. EA-1956: Draft Site-Wide Environmental Assessment

    Broader source: Energy.gov [DOE]

    Site-Wide Environmental Assessment for the Divestiture of Rocky Mountain Oilfield Testing Center and Naval Petroleum Reserve No. 3, Natrona County, Wyoming

  3. The Common Elements of Atomic and Hadronic Physics (Conference...

    Office of Scientific and Technical Information (OSTI)

    The Common Elements of Atomic and Hadronic Physics Citation Details In-Document Search Title: The Common Elements of Atomic and Hadronic Physics Authors: Brodsky, Stanley J. ;...

  4. Order, disorder and mixing: The atomic structure of amorphous...

    Office of Scientific and Technical Information (OSTI)

    Order, disorder and mixing: The atomic structure of amorphous mixtures of titania and tantala Citation Details In-Document Search Title: Order, disorder and mixing: The atomic ...

  5. The perfect atom sandwich requires an extra layer > Archived...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Titanium atoms (yellow) preferentially bond with oxygen atoms (gray) and sit at the center of a complete octahedron, making it energetically more favorable for titanium to switch ...

  6. Institute for Atom-Efficient Chemical Transformations Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Institute for Atom-Efficient Chemical Transformations - an Energy Frontier Research Center The Institute for Atom-Efficient Chemical Transformations (IACT) employs a...

  7. Institute for Atom-Efficient Chemical Transformations Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    scientific roadblocks to U.S. energy security. Institute for Atom-Efficient Chemical Transformations The Institute for Atom-Efficient Chemical Transformations (IACT)...

  8. Atomic line emission analyzer for hydrogen isotopes (Patent)...

    Office of Scientific and Technical Information (OSTI)

    Atomic line emission analyzer for hydrogen isotopes Title: Atomic line emission analyzer for hydrogen isotopes Apparatus for isotopic analysis of hydrogen comprises a low pressure ...

  9. Spatial atomic layer deposition on flexible substrates using...

    Office of Scientific and Technical Information (OSTI)

    Spatial atomic layer deposition on flexible substrates using a modular rotating cylinder reactor Citation Details In-Document Search Title: Spatial atomic layer deposition on...

  10. Charge flow model for atomic ordering in nonisovalent alloys...

    Office of Scientific and Technical Information (OSTI)

    Charge flow model for atomic ordering in nonisovalent alloys Title: Charge flow model for atomic ordering in nonisovalent alloys Authors: Wang, Shuzhi ; Wang, Lin-Wang Publication ...

  11. Hewlett and Duncan - Atomic Shield | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Duncan - Atomic Shield Hewlett and Duncan - Atomic Shield Hewlett, Richard G. and Francis Duncan. Atomic Shield, 1947-1952. U.S. Atomic Energy Comission, 1972. The second volume of the three volume A History of the United States Atomic Energy Commission. Text in each PDF is fully searchable. "Hewlett and Duncan - Atomic Shield (complete).pdf" contains the complete text and images from Atomic Shield. 12mb "Hewlett and Duncan - Atomic Shield (figures only).pdf" contains hi-res

  12. Los Alamos Selected as Atomic Weapons Laboratory | National Nuclear...

    National Nuclear Security Administration (NNSA)

    Los Alamos Selected as Atomic Weapons Laboratory Los Alamos, NM Groves selects Los Alamos, New Mexico, as site for separate scientific laboratory to design an atomic bomb

  13. Signals from dark atom formation in halos (Journal Article) ...

    Office of Scientific and Technical Information (OSTI)

    Signals from dark atom formation in halos Prev Next Title: Signals from dark atom formation in halos Authors: Pearce, Lauren ; Petraki, Kalliopi ; Kusenko, Alexander ...

  14. The Simplicity of Perfect Atoms: Degeneracies in Supersymmetric...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: The Simplicity of Perfect Atoms: Degeneracies in Supersymmetric Hydrogen Citation Details In-Document Search Title: The Simplicity of Perfect Atoms: Degeneracies...

  15. The Simplicity of Perfect Atoms: Degeneracies in Supersymmetric...

    Office of Scientific and Technical Information (OSTI)

    The Simplicity of Perfect Atoms: Degeneracies in Supersymmetric Hydrogen Citation Details In-Document Search Title: The Simplicity of Perfect Atoms: Degeneracies in Supersymmetric...

  16. Ultra-sensitive Magnetic Microscopy with an Atomic Magnetometer...

    Office of Scientific and Technical Information (OSTI)

    Country of Publication: United States Language: English Subject: 74 ATOMIC AND ... PERFORMANCE TESTING; SENSITIVITY; DATA ACQUISITION SYSTEMS; ALKALI METALS; ATOMS Word ...

  17. Clifford G. Shull, Neutron Diffraction, Hydrogen Atoms, and Neutron...

    Office of Scientific and Technical Information (OSTI)

    In Professor Shull's opinion the most important problem he worked on at the time dealt with determining the positions of hydrogen atoms in materials. "Hydrogen atoms are ubiquitous ...

  18. Atomic Layer Deposition of Metal Sulfide Materials | Argonne...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic Layer Deposition of Metal Sulfide Materials Title Atomic Layer Deposition of Metal Sulfide Materials Publication Type Journal Article Year of Publication 2015 Authors...

  19. Atom probe tomographic mapping directly reveals the atomic distribution of phosphorus in resin embedded ferritin

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Perea, Daniel E.; Liu, Jia; Bartrand, Jonah A. G.; Dicken, Quinten G.; Thevuthasan, Suntharampillai Theva; Browning, Nigel D.; Evans, James E.

    2016-02-29

    In this study, we report the atomic-scale analysis of biological interfaces using atom probe tomography. Embedding the protein ferritin in an organic polymer resin lacking nitrogen provided chemical contrast to visualize atomic distributions and distinguish organic-organic and organic-inorganic interfaces. The sample preparation method can be directly extended to further enhance the study of biological, organic and inorganic nanomaterials relevant to health, energy or the environment.

  20. Atoms for peace and war, 1953-1961: Eisenhower and the Atomic Energy Commission

    SciTech Connect (OSTI)

    Hewlett, Richard G.; Holl, Jack M.

    1989-12-01

    This third volume in the official history of the U.S. Atomic Energy Commission covers the years of the Eisenhower Administration.

  1. Investigation of leakage current paths in n-GaN by conductive atomic force microscopy

    SciTech Connect (OSTI)

    Kim, Bumho; Park, Yongjo E-mail: eyoon@snu.ac.kr; Moon, Daeyoung; Nanishi, Yasushi; Joo, Kisu; Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 443-270 ; Oh, Sewoung; Lee, Young Kuk; Yoon, Euijoon E-mail: eyoon@snu.ac.kr; WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-742; Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 443-270; Department of Materials Science and Engineering, Seoul National University, Seoul 151-742

    2014-03-10

    We have investigated electrical characteristics of leakage current paths in n-GaN layer grown by metal-organic chemical vapor deposition with conductive-atomic force microscopy (C-AFM). The C-AFM mapping shows two kinds of leakage current paths existing in the n-GaN layer: open-core dislocation and pure screw dislocation. From the localized I-V curves measured by C-AFM, we confirmed that the open-core screw dislocation shows more significant leakage current. We explained these results in terms of a modified Schottky band model based on donor states formed by oxygen segregation at the (10−10) sidewall of the open-core screw dislocation.

  2. A High-Reflectivity, Ambient-Stable Graphene Mirror for Neutral Atomic and Molecular Beams

    SciTech Connect (OSTI)

    Sutter, P.; Minniti, M.; Albrecht, P.; Farias, D.; Miranda, R.; Sutter, E.

    2011-11-21

    We report a He and H{sub 2} diffraction study of graphene-terminated Ru(0001) thin films grown epitaxially on c-axis sapphire. Even for samples exposed for several weeks to ambient conditions, brief annealing in ultrahigh vacuum restored extraordinarily high specular reflectivities for He and H{sub 2} beams (23% and 7% of the incident beam, respectively). The quality of the angular distributions recorded with both probes exceeds the one obtained from in-situ prepared graphene on Ru(0001) single crystals. Our results for graphene-terminated Ru thin films represent a significant step toward ambient tolerant, high-reflectivity curved surface mirrors for He-atom microscopy.

  3. Atomic structure, energetics, dynamics, and manipulation of topological solitons in indium chains on Si(111) surfaces

    SciTech Connect (OSTI)

    Zhang, Hui; Choi, Jin-Ho; Xu, Yang; Wang, Xiuxia; Zhai, Xiaofang; Wang, Bing; Zeng, Changgan; Zeng, Changgan; Cho, Jun-Hyung; Cho, Jun-Hyung; Zhang, Zhenyu; Hou, J. G.

    2011-01-01

    Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Variabletemperature measurements of the soliton population allow us to determine the soliton formation energy to be 60 meV, smaller than one half of the band gap of 200 meV. Once created, these solitons have very low mobility, even though the activation energy is only about 20 meV; the sluggish nature is attributed to the exceptionally low attempt frequency for soliton migration. We further demonstrate local electric field enhanced soliton dynamics, and the feasibility of aggregating solitons into soliton polymers.

  4. Epitaxial two-dimensional nitrogen atomic sheet in GaAs

    SciTech Connect (OSTI)

    Harada, Yukihiro Yamamoto, Masuki; Baba, Takeshi; Kita, Takashi

    2014-01-27

    We have grown an epitaxial two-dimensional nitrogen (N) atomic sheet in GaAs by using the site-controlled N δ-doping technique. We observed a change of the electronic states in N δ-doped GaAs from the isolated impurity centers to the delocalized impurity band at 1.49 eV with increasing N-doping density. According to the excitation-power- and temperature-dependent photoluminescence (PL) spectra, the emission related to localized levels below the impurity band edge was dominant at low excitation power and temperature, whereas the effects of the localized levels can be neglected by increasing the excitation power and temperature. Furthermore, a clear Landau shift of the PL-peak energy was observed at several Tesla in the Faraday configuration, in contrast to the case in the impurity limit.

  5. High sensitive formaldehyde graphene gas sensor modified by atomic layer deposition zinc oxide films

    SciTech Connect (OSTI)

    Mu, Haichuan; Zhang, Zhiqiang; Wang, Keke; Xie, Haifen, E-mail: hfxie@ecust.edu.cn [Department of Physics, School of Science, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237 (China); Zhao, Xiaojing; Liu, Feng [Department of Physics, Shanghai Normal University, 100 Guilin Road, Shanghai 200234 (China)

    2014-07-21

    Zinc oxide (ZnO) thin films with various thicknesses were fabricated by Atomic Layer Deposition on Chemical Vapor Deposition grown graphene films and their response to formaldehyde has been investigated. It was found that 0.5?nm ZnO films modified graphene sensors showed high response to formaldehyde with the resistance change up to 52% at the concentration of 9 parts-per-million (ppm) at room temperature. Meanwhile, the detection limit could reach 180 parts-per-billion (ppb) and fast response of 36?s was also obtained. The high sensitivity could be attributed to the combining effect from the highly reactive, top mounted ZnO thin films, and high conductive graphene base network. The dependence of ZnO films surface morphology and its sensitivity on the ZnO films thickness was also investigated.

  6. Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Mary?ski, A.; S?k, G.; Musia?, A.; Andrzejewski, J.; Misiewicz, J.; Gilfert, C.; Reithmaier, J. P.; Capua, A.; Karni, O.; Gready, D.; Eisenstein, G.; Atiya, G.; Kaplan, W. D.; Klling, S.

    2013-09-07

    The optical and structural properties of a new kind of InAs/InGaAlAs/InP quantum dot (QD)-like objects grown by molecular beam epitaxy have been investigated. These nanostructures were found to have significantly more symmetrical shapes compared to the commonly obtained dash-like geometries typical of this material system. The enhanced symmetry has been achieved due to the use of an As{sub 2} source and the consequent shorter migration length of the indium atoms. Structural studies based on a combination of scanning transmission electron microscopy (STEM) and atom probe tomography (APT) provided detailed information on both the structure and composition distribution within an individual nanostructure. However, it was not possible to determine the lateral aspect ratio from STEM or APT. To verify the in-plane geometry, electronic structure calculations, including the energy levels and transition oscillator strength for the QDs have been performed using an eight-band kp model and realistic system parameters. The results of calculations were compared to measured polarization-resolved photoluminescence data. On the basis of measured degree of linear polarization of the surface emission, the in-plane shape of the QDs has been assessed proving a substantial increase in lateral symmetry. This results in quantum-dot rather than quantum-dash like properties, consistent with expectations based on the growth conditions and the structural data.

  7. X-ray diffraction analysis of LiCu{sub 2}O{sub 2} crystals with additives of silver atoms

    SciTech Connect (OSTI)

    Sirotinkin, V. P. Bush, A. A.; Kamentsev, K. E.; Dau, H. S.; Yakovlev, K. A.; Tishchenko, E. A.

    2015-09-15

    Silver-containing LiCu{sub 2}O{sub 2} crystals up to 4 × 8 × 8 mm in size were grown by the crystallization of 80(1-x)CuO · 20{sub x}AgNO{sub 3} · 20Li{sub 2}CO{sub 3} (0 ≤ x ≤ 0.5) mixture melt. According to the X-ray spectral and Rietveld X-ray diffraction data, the maximum amount of silver incorporated in the LiCu{sub 2}O{sub 2} structure is about 4 at % relative to the copper content. It was established that silver atoms occupy statistically crystallographic positions of lithium atoms. The incorporation of silver atoms is accompanied by a noticeable increase in parameter c of the LiCu{sub 2}O{sub 2} rhombic unit cell, a slight increase in parameter a, and a slight decrease in parameter b.

  8. Remote monitoring using technologies from the Internet and World Wide Web

    SciTech Connect (OSTI)

    Puckett, J.M.; Burczyk, L.

    1997-11-01

    Recent developments in Internet technologies are changing and enhancing how one processes and exchanges information. These developments include software and hardware in support of multimedia applications on the World Wide Web. In this paper the authors describe these technologies as they have applied them to remote monitoring and show how they will allow the International Atomic Energy Agency to efficiently review and analyze remote monitoring data for verification of material movements. The authors have developed demonstration software that illustrates several safeguards data systems using the resources of the Internet and Web to access and review data. This Web demo allows the user to directly observe sensor data, to analyze simulated safeguards data, and to view simulated on-line inventory data. Future activities include addressing the technical and security issues associated with using the Web to interface with existing and planned monitoring systems at nuclear facilities. Some of these issues are authentication, encryption, transmission of large quantities of data, and data compression.

  9. Interconnection-Wide Transmission Planning Initiative - Meeting Calendars |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Interconnection-Wide Transmission Planning Initiative - Meeting Calendars Interconnection-Wide Transmission Planning Initiative - Meeting Calendars Click on the links below to access each awardee's meeting and events calendar. Eastern Interconnection Topic A Awardee: Eastern Interconnection Planning Collaborative Topic B Awardee: Eastern Interconnection States' Planning Council Western Interconnection Topic A Awardee: Western Electricity Coordinating Council Topic B

  10. Carbon nanotubes grown on metal microelectrodes for the detection of dopamine

    SciTech Connect (OSTI)

    Yang, Cheng; Jacobs, Christopher B.; Nguyen, Michael; Ganesana, Mallikarjunarao; Zestos, Alexander; Ivanov, Ilia N.; Puretzky, Alexander A.; Rouleau, Christopher M.; Geohegan, David B.; Venton, B. Jill

    2015-12-07

    Microelectrodes modified with carbon nanotubes (CNTs) are useful for the detection of neurotransmitters because the CNTs enhance sensitivity and have electrocatalytic effects. CNTs can be grown on carbon fiber microelectrodes (CFMEs) but the intrinsic electrochemical activity of carbon fibers makes evaluating the effect of CNT enhancement difficult. Metal wires are highly conductive and many metals have no intrinsic electrochemical activity for dopamine, so we investigated CNTs grown on metal wires as microelectrodes for neurotransmitter detection. In this work, we successfully grew CNTs on niobium substrates for the first time. Instead of planar metal surfaces, metal wires with a diameter of only 25 μm were used as CNT substrates; these have potential in tissue applications due to their minimal tissue damage and high spatial resolution. Scanning electron microscopy shows that aligned CNTs are grown on metal wires after chemical vapor deposition. By use of fast-scan cyclic voltammetry, CNT-coated niobium (CNT-Nb) microelectrodes exhibit higher sensitivity and lower ΔEp value compared to CNTs grown on carbon fibers or other metal wires. The limit of detection for dopamine at CNT-Nb microelectrodes is 11 ± 1 nM, which is approximately 2-fold lower than that of bare CFMEs. Adsorption processes were modeled with a Langmuir isotherm, and detection of other neurochemicals was also characterized, including ascorbic acid, 3,4-dihydroxyphenylacetic acid, serotonin, adenosine, and histamine. CNT-Nb microelectrodes were used to monitor stimulated dopamine release in anesthetized rats with high sensitivity. This research demonstrates that CNT-grown metal microelectrodes, especially CNTs grown on Nb microelectrodes, are useful for monitoring neurotransmitters.

  11. Carbon nanotubes grown on metal microelectrodes for the detection of dopamine

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, Cheng; Jacobs, Christopher B.; Nguyen, Michael; Ganesana, Mallikarjunarao; Zestos, Alexander; Ivanov, Ilia N.; Puretzky, Alexander A.; Rouleau, Christopher M.; Geohegan, David B.; Venton, B. Jill

    2015-12-07

    Microelectrodes modified with carbon nanotubes (CNTs) are useful for the detection of neurotransmitters because the CNTs enhance sensitivity and have electrocatalytic effects. CNTs can be grown on carbon fiber microelectrodes (CFMEs) but the intrinsic electrochemical activity of carbon fibers makes evaluating the effect of CNT enhancement difficult. Metal wires are highly conductive and many metals have no intrinsic electrochemical activity for dopamine, so we investigated CNTs grown on metal wires as microelectrodes for neurotransmitter detection. In this work, we successfully grew CNTs on niobium substrates for the first time. Instead of planar metal surfaces, metal wires with a diameter ofmore » only 25 μm were used as CNT substrates; these have potential in tissue applications due to their minimal tissue damage and high spatial resolution. Scanning electron microscopy shows that aligned CNTs are grown on metal wires after chemical vapor deposition. By use of fast-scan cyclic voltammetry, CNT-coated niobium (CNT-Nb) microelectrodes exhibit higher sensitivity and lower ΔEp value compared to CNTs grown on carbon fibers or other metal wires. The limit of detection for dopamine at CNT-Nb microelectrodes is 11 ± 1 nM, which is approximately 2-fold lower than that of bare CFMEs. Adsorption processes were modeled with a Langmuir isotherm, and detection of other neurochemicals was also characterized, including ascorbic acid, 3,4-dihydroxyphenylacetic acid, serotonin, adenosine, and histamine. CNT-Nb microelectrodes were used to monitor stimulated dopamine release in anesthetized rats with high sensitivity. This research demonstrates that CNT-grown metal microelectrodes, especially CNTs grown on Nb microelectrodes, are useful for monitoring neurotransmitters.« less

  12. Temperature measurement of cold atoms using single-atom transits and Monte Carlo simulation in a strongly coupled atom-cavity system

    SciTech Connect (OSTI)

    Li, Wenfang; Du, Jinjin; Wen, Ruijuan; Yang, Pengfei; Li, Gang; Zhang, Tiancai; Liang, Junjun

    2014-03-17

    We investigate the transmission of single-atom transits based on a strongly coupled cavity quantum electrodynamics system. By superposing the transit transmissions of a considerable number of atoms, we obtain the absorption spectra of the cavity induced by single atoms and obtain the temperature of the cold atom. The number of atoms passing through the microcavity for each release is also counted, and this number changes exponentially along with the atom temperature. Monte Carlo simulations agree closely with the experimental results, and the initial temperature of the cold atom is determined. Compared with the conventional time-of-flight (TOF) method, this approach avoids some uncertainties in the standard TOF and sheds new light on determining temperature of cold atoms by counting atoms individually in a confined space.

  13. Effects of Bismuth on Wide-Depletion-Width GaInNAs Solar Cells

    SciTech Connect (OSTI)

    Ptak, A. J.; France, R.; Jiang, C.-S.; Reedy, R. C.

    2008-05-01

    GaInNAs solar cells could be useful in next-generation multijunction solar cells if issues surrounding low photocurrents and photovoltages are surmounted. Wide-depletion-width devices generate significant photocurrent using a p-i-n structure grown by molecular beam epitaxy, but these depletion widths are only realized in a region of parameter space that leads to rough surface morphologies. Here, bismuth is explored as a surfactant for the growth of GaInNAs solar cells. Very low fluxes of Bi are effective at maintaining smooth surfaces, even at high growth temperatures and In contents. However, Bi also increases the net donor concentration in these materials, manifested in our n-on-p device structures as a pn-junction that moves deeper into the base layer with increasing Bi fluxes. Quantum efficiency modeling and scanning kelvin probe microscopy measurements confirm the type conversion of the base layer from p type to n type. Bi incorporation in GaAsBi samples shows signs of surface segregation, leading to a finite buildup time, and this effect may lead to slow changes in the electrical properties of the GaInNAs(Bi) devices. Bi also appears to create a defect level, although this defect level is not deleterious enough to increase the dark current in the devices.

  14. Billion-Ton Update: Home-Grown Energy Resources Across the Nation |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Billion-Ton Update: Home-Grown Energy Resources Across the Nation Billion-Ton Update: Home-Grown Energy Resources Across the Nation August 11, 2011 - 3:59pm Addthis Total potential biomass resources by county in the contiguous U.S. from the baseline scenario of the Update (Figure 6.4, page 159) | Map from Billion-Ton Update Total potential biomass resources by county in the contiguous U.S. from the baseline scenario of the Update (Figure 6.4, page 159) | Map from

  15. Method and apparatus for atomic imaging

    DOE Patents [OSTI]

    Saldin, Dilano K.; de Andres Rodriquez, Pedro L.

    1993-01-01

    A method and apparatus for three dimensional imaging of the atomic environment of disordered adsorbate atoms are disclosed. The method includes detecting and measuring the intensity of a diffuse low energy electron diffraction pattern formed by directing a beam of low energy electrons against the surface of a crystal. Data corresponding to reconstructed amplitudes of a wave form is generated by operating on the intensity data. The data corresponding to the reconstructed amplitudes is capable of being displayed as a three dimensional image of an adsorbate atom. The apparatus includes a source of a beam of low energy electrons and a detector for detecting the intensity distribution of a DLEED pattern formed at the detector when the beam of low energy electrons is directed onto the surface of a crystal. A device responsive to the intensity distribution generates a signal corresponding to the distribution which represents a reconstructed amplitude of a wave form and is capable of being converted into a three dimensional image of the atomic environment of an adsorbate atom on the crystal surface.

  16. Layered Atom Arrangements in Complex Materials

    SciTech Connect (OSTI)

    K.E. Sikafus; R.W.Grimes; S.M.Corish; A.R. Cleave; M.Tang; C.R.Stanek; B.P. Uberuaga; J.A.Valdez

    2005-04-15

    In this report, we develop an atom layer stacking model to describe systematically the crystal structures of complex materials. To illustrate the concepts, we consider a sequence of oxide compounds in which the metal cations progress in oxidation state from monovalent (M{sup 1+}) to tetravalent (M{sup 4+}). We use concepts relating to geometric subdivisions of a triangular atom net to describe the layered atom patterns in these compounds (concepts originally proposed by Shuichi Iida). We demonstrate that as a function of increasing oxidation state (from M{sup 1+} to M{sup 4+}), the layer stacking motifs used to generate each successive structure (specifically, motifs along a 3 symmetry axis), progress through the following sequence: MMO, MO, M{sub r}O, MO{sub r/s}O{sub u/v}, MOO (where M and O represent fully dense triangular atom nets and r/s and u/v are fractions used to describe partially filled triangular atom nets). We also develop complete crystallographic descriptions for the compounds in our oxidation sequence using trigonal space group R{bar 3}.

  17. Permutation-invariant distance between atomic configurations

    SciTech Connect (OSTI)

    Ferré, Grégoire; Maillet, Jean-Bernard; Stoltz, Gabriel

    2015-09-14

    We present a permutation-invariant distance between atomic configurations, defined through a functional representation of atomic positions. This distance enables us to directly compare different atomic environments with an arbitrary number of particles, without going through a space of reduced dimensionality (i.e., fingerprints) as an intermediate step. Moreover, this distance is naturally invariant through permutations of atoms, avoiding the time consuming associated minimization required by other common criteria (like the root mean square distance). Finally, the invariance through global rotations is accounted for by a minimization procedure in the space of rotations solved by Monte Carlo simulated annealing. A formal framework is also introduced, showing that the distance we propose verifies the property of a metric on the space of atomic configurations. Two examples of applications are proposed. The first one consists in evaluating faithfulness of some fingerprints (or descriptors), i.e., their capacity to represent the structural information of a configuration. The second application concerns structural analysis, where our distance proves to be efficient in discriminating different local structures and even classifying their degree of similarity.

  18. Efimov physics in {sup 6}Li atoms

    SciTech Connect (OSTI)

    Braaten, Eric; Hammer, H.-W.; Kang, Daekyoung; Platter, Lucas

    2010-01-15

    A new narrow three-atom loss resonance associated with an Efimov trimer crossing the three-atom threshold has recently been discovered in a many-body system of ultracold {sup 6}Li atoms in the three lowest hyperfine spin states at a magnetic field near 895 G. O'Hara and coworkers have used measurements of the three-body recombination rate in this region to determine the complex three-body parameter associated with Efimov physics. Using this parameter as the input, we calculate the universal predictions for the spectrum of Efimov states and for the three-body recombination rate in the universal region above 600 G where all three scattering lengths are large. We predict an atom-dimer loss resonance at 672+-2 G associated with an Efimov trimer disappearing through an atom-dimer threshold. We also predict an interference minimum in the three-body recombination rate at 759+-1 G where the three-spin mixture may be sufficiently stable to allow experimental study of the many-body system.

  19. Fact #844: October 27, 2014 Electricity Generated from Coal has Declined while Generation from Natural Gas has Grown – Dataset

    Office of Energy Efficiency and Renewable Energy (EERE)

    Excel file with dataset for Fact #844: Electricity Generated from Coal has Declined while Generation from Natural Gas has Grown

  20. Atomic-Level Sculpting of Crystalline Oxides: Toward Bulk Nanofabrication with Single Atomic Plane Precision

    SciTech Connect (OSTI)

    Jesse, Stephen; He, Qian; Lupini, Andrew R.; Leonard, Donovan N.; Oxley, Mark P.; Ovchinnikov, Oleg; Unocic, Raymond R.; Tselev, Alexander; Fuentes-Cabrera, Miguel; Sumpter, Bobby G.; Pennycook, Stephen J.; Kalinin, Sergei V.; Borisevich, Albina Y.

    2015-10-19

    We demonstrate atomic-level sculpting of 3D crystalline oxide nanostructures from metastable amorphous layer in a scanning transmission electron microscope (STEM). Strontium titanate nanostructures grow epitaxially from the crystalline substrate following the beam path. This method can be used for fabricating crystalline structures as small as 1-2 nm and the process can be observed in situ with atomic resolution. We further demonstrate fabrication of arbitrary shape structures via control of the position and scan speed of the electron beam. Combined with broad availability of the atomic resolved electron microscopy platforms, these observations suggest the feasibility of large scale implementation of bulk atomic-level fabrication as a new enabling tool of nanoscience and technology, providing a bottom-up, atomic-level complement to 3D printing.

  1. Atomic-Level Sculpting of Crystalline Oxides: Toward Bulk Nanofabrication with Single Atomic Plane Precision

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jesse, Stephen; He, Qian; Lupini, Andrew R.; Leonard, Donovan N.; Oxley, Mark P.; Ovchinnikov, Oleg; Unocic, Raymond R.; Tselev, Alexander; Fuentes-Cabrera, Miguel; Sumpter, Bobby G.; et al

    2015-10-19

    We demonstrate atomic-level sculpting of 3D crystalline oxide nanostructures from metastable amorphous layer in a scanning transmission electron microscope (STEM). Strontium titanate nanostructures grow epitaxially from the crystalline substrate following the beam path. This method can be used for fabricating crystalline structures as small as 1-2 nm and the process can be observed in situ with atomic resolution. We further demonstrate fabrication of arbitrary shape structures via control of the position and scan speed of the electron beam. Combined with broad availability of the atomic resolved electron microscopy platforms, these observations suggest the feasibility of large scale implementation of bulkmore » atomic-level fabrication as a new enabling tool of nanoscience and technology, providing a bottom-up, atomic-level complement to 3D printing.« less

  2. A History of the Atomic Energy Commission | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atomic Energy Commission A History of the Atomic Energy Commission A History of the Atomic Energy Commission - written by Alice L. Buck Washington, D.C.: U.S. Department of Energy, July 1983. 41 pp. AEC History.pdf (1.01 MB) More Documents & Publications The History of Nuclear Energy The Manhattan Project Hewlett and Holl - Atoms for Peace and War

  3. Light-pulse atom interferometric device

    DOE Patents [OSTI]

    Biedermann, Grant; McGuinness, Hayden James Evans; Rakholia, Akash; Jau, Yuan-Yu; Schwindt, Peter; Wheeler, David R.

    2016-03-22

    An atomic interferometric device useful, e.g., for measuring acceleration or rotation is provided. The device comprises at least one vapor cell containing a Raman-active chemical species, an optical system, and at least one detector. The optical system is conformed to implement a Raman pulse interferometer in which Raman transitions are stimulated in a warm vapor of the Raman-active chemical species. The detector is conformed to detect changes in the populations of different internal states of atoms that have been irradiated by the optical system.

  4. SECTION IV. ATOMIC AND MOLECULAR SCIENCE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    IV. ATOMIC AND MOLECULAR SCIENCE Cross Sections for Cu K-Vacancy Production in Fast Heavy Ion Collisions R.L. Watson, J.M. Blackadar and V. Horvat Enhancement of the Cu Kα x-ray Diagram Lines in Fast Heavy Ion Collisions R.L. Watson, V. Horvat and J.M. Blackadar K-shell Ionization by Secondary Electrons V. Horvat, R.L. Watson and J.M. Blackadar Target-atom Inner-shell Vacancy Distributions Created in Collisions with Heavy Ion Projectiles V. Horvat, R.L. Watson and J.M. Blackadar Systematics of

  5. Atom Probe Tomography of Nanoscale Electronic Materials

    SciTech Connect (OSTI)

    Larson, David J.; Prosa, Ty J.; Perea, Daniel E.; Inoue, Hidekazu; Mangelinck, D.

    2016-01-01

    Atom probe tomography (APT) is a mass spectrometry based on time-of-flight measurements which also concurrently produces 3D spatial information. The reader is referred to any of the other papers in this volume or to the following references for further information 4–8. The current capabilities of APT, such as detecting a low number of dopant atoms in nanoscale devices or segregation at a nanoparticle interface, make this technique an important component in the nanoscale metrology toolbox. In this manuscript, we review some of the applications of APT to nanoscale electronic materials, including transistors and finFETs, silicide contact microstructures, nanowires, and nanoparticles.

  6. Committee on Atomic, Molecular and Optical Sciences

    SciTech Connect (OSTI)

    Lancaster, James

    2015-06-30

    The Committee on Atomic, Molecular, and Optical Sciences (CAMOS) is a standing activity of the National Research Council (NRC) that operates under the auspices of the Board on Physics and Astronomy. CAMOS is one of five standing committees of the BPA that are charged with assisting it in achieving its goals—monitoring the health of physics and astronomy, identifying important new developments at the scientific forefronts, fostering interactions with other fields, strengthening connections to technology, facilitating effective service to the nation, and enhancing education in physics. CAMOS provides these capabilities for the atomic, molecular and optical (AMO) sciences.

  7. NREL: Measurements and Characterization - Atomic Force Microscopy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic Force Microscopy Atomic Force Microscopy (AFM) operates in several modes. In contact mode, a tip that is attached to a cantilever is scanned over the sample surface, while the force between tip and sample is measured. While the tip is scanned laterally, the force is kept constant by moving the cantilever/tip assembly up and down, so that the deflection of the cantilever is kept constant. The vertical movement of the cantilever/tip assembly is recorded and used to generate an image of the

  8. Analysis of a magnetically trapped atom clock

    SciTech Connect (OSTI)

    Kadio, D.; Band, Y. B.

    2006-11-15

    We consider optimization of a rubidium atom clock that uses magnetically trapped Bose condensed atoms in a highly elongated trap, and determine the optimal conditions for minimum Allan variance of the clock using microwave Ramsey fringe spectroscopy. Elimination of magnetic field shifts and collisional shifts are considered. The effects of spin-dipolar relaxation are addressed in the optimization of the clock. We find that for the interstate interaction strength equal to or larger than the intrastate interaction strengths, a modulational instability results in phase separation and symmetry breaking of the two-component condensate composed of the ground and excited hyperfine clock levels, and this mechanism limits the clock accuracy.

  9. Isolating and moving single atoms using silicon nanocrystals

    DOE Patents [OSTI]

    Carroll, Malcolm S.

    2010-09-07

    A method is disclosed for isolating single atoms of an atomic species of interest by locating the atoms within silicon nanocrystals. This can be done by implanting, on the average, a single atom of the atomic species of interest into each nanocrystal, and then measuring an electrical charge distribution on the nanocrystals with scanning capacitance microscopy (SCM) or electrostatic force microscopy (EFM) to identify and select those nanocrystals having exactly one atom of the atomic species of interest therein. The nanocrystals with the single atom of the atomic species of interest therein can be sorted and moved using an atomic force microscope (AFM) tip. The method is useful for forming nanoscale electronic and optical devices including quantum computers and single-photon light sources.

  10. Atomic-level imaging, processing and characterization of semiconductor surfaces

    DOE Patents [OSTI]

    Kazmerski, Lawrence L.

    1995-01-01

    A method for selecting and removing single specific atoms from a solid material surface uses photon biasing to break down bonds that hold the selected atom in the lattice and to reduce barrier effects that hold the atom from transferring to a probe. The photon bias is preferably light or other electromagnetic radiation with a wavelength and frequency that approximately matches the wave function of the target atom species to be removed to induce high energy, selective thermionic-like vibration. An electric field potential is then applied between the probe and the surface of the solid material to pull the atom out of the lattice and to transfer the atom to the probe. Different extrinsic atoms can be installed in the lattice sites that are vacated by the removed atoms by using a photon bias that resonates the extrinsic atom species, reversing polarity of the electric field, and blowing gas comprising the extrinsic atoms through a hollow catheter probe.

  11. Atomic-level imaging, processing and characterization of semiconductor surfaces

    DOE Patents [OSTI]

    Kazmerski, L.L.

    1995-08-22

    A method for selecting and removing single specific atoms from a solid material surface uses photon biasing to break down bonds that hold the selected atom in the lattice and to reduce barrier effects that hold the atom from transferring to a probe. The photon bias is preferably light or other electromagnetic radiation with a wavelength and frequency that approximately matches the wave function of the target atom species to be removed to induce high energy, selective thermionic-like vibration. An electric field potential is then applied between the probe and the surface of the solid material to pull the atom out of the lattice and to transfer the atom to the probe. Different extrinsic atoms can be installed in the lattice sites that are vacated by the removed atoms by using a photon bias that resonates the extrinsic atom species, reversing polarity of the electric field, and blowing gas comprising the extrinsic atoms through a hollow catheter probe. 8 figs.

  12. Temperature threshold for nanorod structuring of metal and oxide films grown by glancing angle deposition

    SciTech Connect (OSTI)

    Deniz, Derya; Lad, Robert J.

    2011-01-15

    Thin films of tin (Sn), aluminum (Al), gold (Au), ruthenium (Ru), tungsten (W), ruthenium dioxide (RuO{sub 2}), tin dioxide (SnO{sub 2}), and tungsten trioxide (WO{sub 3}) were grown by glancing angle deposition (GLAD) to determine the nanostructuring temperature threshold, {Theta}{sub T}, above which adatom surface diffusion becomes large enough such that nanorod morphology is no longer formed during growth. The threshold was found to be lower in metals compared to oxides. Films were grown using both dc and pulsed dc magnetron sputtering with continuous substrate rotation over the temperature range from 291 to 866 K. Film morphologies, structures, and compositions were characterized by high resolution scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Films were also grown in a conventional configuration for comparison. For elemental metals, nanorod structuring occurs for films with melting points higher than that of Al (933 K) when grown at room temperature with a rotation rate of {approx}5 rpm, corresponding to a value of {Theta}{sub T}{approx_equal}0.33{+-}0.01. For the oxide films, a value of {Theta}{sub T}{approx_equal}0.5 was found, above which GLAD nanorod structuring does not occur. The existence of a nanostructuring temperature threshold in both metal and oxide GLAD films can be attributed to greater adatom mobilities as temperature is increased resulting in nonkinetically limited film nucleation and growth processes.

  13. TEM studies of laterally overgrown GaN layers grown on non-polarsubstrates

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Ni, X.; Morkoc, H.

    2006-01-05

    Transmission electron microscopy (TEM) was used to study pendeo-epitaxial GaN layers grown on polar and non-polar 4H SiC substrates. The structural quality of the overgrown layers was evaluated using a number of TEM methods. Growth of pendeo-epitaxial layers on polar substrates leads to better structural quality of the overgrown areas, however edge-on dislocations are found at the meeting fronts of two wings. Some misorientation between the 'seed' area and wing area was detected by Convergent Beam Electron Diffraction. Growth of pendeo-epitaxial layers on non-polar substrates is more difficult. Two wings on the opposite site of the seed area grow in two different polar directions with different growth rates. Most dislocations in a wing grown with Ga polarity are 10 times wider than wings grown with N-polarity making coalescence of these layers difficult. Most dislocations in a wing grown with Ga polarity bend in a direction parallel to the substrate, but some of them also propagate to the sample surface. Stacking faults formed on the c-plane and prismatic plane occasionally were found. Some misorientation between the wings and seed was detected using Large Angle Convergent Beam Diffraction.

  14. Optical characteristics of ZnO single crystal grown by the hydrothermal method

    SciTech Connect (OSTI)

    Chen, G. Z.; Yin, J. G. E-mail: yjg@siom.ac.cn; Zhang, L. H.; Zhang, P. X.; Wang, X. Y.; Liu, Y. C.; Zhang, C. L.; Gu, S. L.; Hang, Y.

    2015-12-15

    ZnO single crystals have been grown by the hydrothermal method. Raman scattering and Photoluminescence spectroscopy (PL) have been used to study samples of ZnO that were unannealed or annealed in different ambient gases. It is suggested that the green emission may originate from defects related to copper in our samples.

  15. Benefits of Site-wide NEPA National Environmental Policy Act...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Site-wide reviews can aid the Department of Energy (DOE) in meeting its goals to streamline the NEPA process, to make that process more useful to decision makers and thepublic,...

  16. Webinar October 21: Opportunities for Wide Bandgap Semiconductor...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    from the development of next-generation power electronics based on wide bandgap (WBG) semiconductor materials such as SiC and GaN. Examples include the development of reliable,...

  17. DOE Traineeship In Power Engineering (Leveraging Wide Bandgap Power Electronics)

    Broader source: Energy.gov [DOE]

    The Advanced Manufacturing Office announced up to $10 million is available to establish 5-year graduate-level university-led DOE Traineeship(s) in Power Engineering (leveraging emerging Wide...

  18. Department-wide Quick Reaction Work Order System

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1981-03-12

    To describe the new Department Wide Quick Reaction Work Order System, to establish the criteria and procedures for its use, and to identify responsibilities for managing and operating the system.

  19. NNSS Final Site-Wide Environmental Impact Statement (SWEIS) ...

    National Nuclear Security Administration (NNSA)

    the Final Site-Wide Environmental Impact Statement for the Continued Operation of the Nevada National Security Site and Off-Site Locations in the State of Nevada was published. ...

  20. Final Site-Wide Environmental Assessment of the National Renewable...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... document NREL prepared for the STM site in 1993. DOE defines a Site-Wide environmental ... of National Fire Protection Association (NFPA) 13 for an Ordinary Hazard, Group 2 area. ...

  1. Wide Bandgap Semiconductors for Clean Energy Workshop Agenda

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Wide Bandgap Semiconductors for Clean Energy Workshop ... In the same way that the invention of the silicon chip 50 ... example, as switch-mode power supplies and solar inverters. ...

  2. A Study of Transport Protocols for Wide Area Scientific Applications

    SciTech Connect (OSTI)

    Vishal Misra

    2011-03-01

    This is the final project report of award "A Study of Transport Protocols for Wide Area Scientific Applications", given by DOE in 2003 to Vishal Misra at Columbia University.

  3. Active probing of cloud thickness and optical depth using wide-angle imaging LIDAR.

    SciTech Connect (OSTI)

    Love, Steven P.; Davis, A. B.; Rohde, C. A.; Tellier, L. L.; Ho, Cheng,

    2002-01-01

    At most optical wavelengths, laser light in a cloud lidar experiment is not absorbed but merely scattered out of the beam, eventually escaping the cloud via multiple scattering. There is much information available in this light scattered far from the input beam, information ignored by traditional 'on-beam' lidar. Monitoring these off-beam returns in a fully space- and time-resolved manner is the essence of our unique instrument, Wide Angle Imaging Lidar (WAIL). In effect, WAIL produces wide-field (60{sup o} full-angle) 'movies' of the scattering process and records the cloud's radiative Green functions. A direct data product of WAIL is the distribution of photon path lengths resulting from multiple scattering in the cloud. Following insights from diffusion theory, we can use the measured Green functions to infer the physical thickness and optical depth of the cloud layer. WAIL is notable in that it is applicable to optically thick clouds, a regime in which traditional lidar is reduced to ceilometry. Section 2 covers the up-to-date evolution of the nighttime WAIL instrument at LANL. Section 3 reports our progress towards daytime capability for WAIL, an important extension to full diurnal cycle monitoring by means of an ultra-narrow magneto-optic atomic line filter. Section 4 describes briefly how the important cloud properties can be inferred from WAIL signals.

  4. Proposed Energy Transport Corridors: West-wide energy corridor programmatic

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    EIS, Draft Corridors - September 2007. | Department of Energy Proposed Energy Transport Corridors: West-wide energy corridor programmatic EIS, Draft Corridors - September 2007. Proposed Energy Transport Corridors: West-wide energy corridor programmatic EIS, Draft Corridors - September 2007. Map of the area covered by a programmatic environmental impact statement (PEIS), "Designation of Energy Corridors on Federal Land in the 11 Western States" (DOE/EIS-0386) to address the

  5. Federal Register Notice: National Nuclear Security Administration Site-Wide

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Environmental Impact Statement for Sandia National Laboratories, New Mexico (SNL/NM) | Department of Energy Register Notice: National Nuclear Security Administration Site-Wide Environmental Impact Statement for Sandia National Laboratories, New Mexico (SNL/NM) Federal Register Notice: National Nuclear Security Administration Site-Wide Environmental Impact Statement for Sandia National Laboratories, New Mexico (SNL/NM) Federal Register / Vol. 76, No. 156 / Friday, August 12, 2011 / Notices.

  6. Analyses Guided Optimization of Wide Range and High Efficiency Turbocharger

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Compressor | Department of Energy Analyses Guided Optimization of Wide Range and High Efficiency Turbocharger Compressor Analyses Guided Optimization of Wide Range and High Efficiency Turbocharger Compressor Presentation given at the 16th Directions in Engine-Efficiency and Emissions Research (DEER) Conference in Detroit, MI, September 27-30, 2010. deer10_sun.pdf (999.91 KB) More Documents & Publications Advanced boost system development for diesel HCCI/LTC applications Optimization of a

  7. Interconnection-Wide Transmission Planning Initiative: Topic B, Cooperation

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Among States in the Eastern Interconnection on Electric Resource Planning and Priorities | Department of Energy Eastern Interconnection on Electric Resource Planning and Priorities Interconnection-Wide Transmission Planning Initiative: Topic B, Cooperation Among States in the Eastern Interconnection on Electric Resource Planning and Priorities A description of the requirements for Topic B for the Eastern Interconnection under the Interconnection-Wide Transmission Planning Initiative, part of

  8. Interconnection-Wide Transmission Planning Initiative: Topic B, Cooperation

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Among States in the Western Interconnection on Electric Resource Planning and Priorities | Department of Energy Western Interconnection on Electric Resource Planning and Priorities Interconnection-Wide Transmission Planning Initiative: Topic B, Cooperation Among States in the Western Interconnection on Electric Resource Planning and Priorities A description of the requirements for Topic B for the Western Interconnection under the Interconnection-Wide Transmission Planning Initiative, part of

  9. Interconnection-Wide Transmission Planning Initiative: Topic B, State

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Agency Input Regarding Electric Resource and Transmission Planning in the Texas Interconnection | Department of Energy State Agency Input Regarding Electric Resource and Transmission Planning in the Texas Interconnection Interconnection-Wide Transmission Planning Initiative: Topic B, State Agency Input Regarding Electric Resource and Transmission Planning in the Texas Interconnection A description of the requirements for Topic B for the Texas Interconnect under the Interconnection-Wide

  10. Mobility of atoms under ion bombardment

    SciTech Connect (OSTI)

    Alekseevskii, V.; Gertsriken, D.; Kovtun, V.; Tyshkevich, V.; Fal'chenko, V.

    1981-10-01

    Argon ions bombardment (Eapprox.1KeV) of Armco iron in a cold glow discharge plasma (T< or approx. =150/sup 0/C) has been performed to investigate the mobility and behavior of the atoms in the crystal lattice and the formation of a solid solution of Argon in iron.(AIP)

  11. Quantum measurements of atoms using cavity QED

    SciTech Connect (OSTI)

    Dada, Adetunmise C.; Andersson, Erika [SUPA, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Jones, Martin L.; Kendon, Vivien M. [School of Physics and Astronomy, University of Leeds, Woodhouse Lane, Leeds LS2 9JT (United Kingdom); Everitt, Mark S. [School of Physics and Astronomy, University of Leeds, Woodhouse Lane, Leeds LS2 9JT (United Kingdom); National Institute of Informatics, 2-1-2 Hitotsubashi, Chiyoda ku, Tokyo 101-8430 (Japan)

    2011-04-15

    Generalized quantum measurements are an important extension of projective or von Neumann measurements in that they can be used to describe any measurement that can be implemented on a quantum system. We describe how to realize two nonstandard quantum measurements using cavity QED. The first measurement optimally and unambiguously distinguishes between two nonorthogonal quantum states. The second example is a measurement that demonstrates superadditive quantum coding gain. The experimental tools used are single-atom unitary operations effected by Ramsey pulses and two-atom Tavis-Cummings interactions. We show how the superadditive quantum coding gain is affected by errors in the field-ionization detection of atoms and that even with rather high levels of experimental imperfections, a reasonable amount of superadditivity can still be seen. To date, these types of measurements have been realized only on photons. It would be of great interest to have realizations using other physical systems. This is for fundamental reasons but also since quantum coding gain in general increases with code word length, and a realization using atoms could be more easily scaled than existing realizations using photons.

  12. Nano-soldering to single atomic layer

    DOE Patents [OSTI]

    Girit, Caglar O.; Zettl, Alexander K.

    2011-10-11

    A simple technique to solder submicron sized, ohmic contacts to nanostructures has been disclosed. The technique has several advantages over standard electron beam lithography methods, which are complex, costly, and can contaminate samples. To demonstrate the soldering technique graphene, a single atomic layer of carbon, has been contacted, and low- and high-field electronic transport properties have been measured.

  13. Atomic power in space: A history

    SciTech Connect (OSTI)

    Not Available

    1987-03-01

    ''Atomic Power in Space,'' a history of the Space Isotope Power Program of the United States, covers the period from the program's inception in the mid-1950s through 1982. Written in non-technical language, the history is addressed to both the general public and those more specialized in nuclear and space technologies. 19 figs., 3 tabs.

  14. Atomic physics with highly charged ions

    SciTech Connect (OSTI)

    Richard, P.

    1991-08-01

    This report discusses: One electron outer shell processes in fast ion-atom collisions; role of electron-electron interaction in two-electron processes; multi-electron processes at low energy; multi-electron processes at high energy; inner shell processes; molecular fragmentation studies; theory; and, JRM laboratory operations.

  15. Theory of multiphoton ionization of atoms

    SciTech Connect (OSTI)

    Szoeke, A.

    1986-03-01

    A non-perturbative approach to the theory of multiphoton ionization is reviewed. Adiabatic Floquet theory is its first approximation. It explains qualitatively the energy and angular distribution of photoelectrons. In many-electron atoms it predicts collective and inner shell excitation. 14 refs.

  16. Molecular Beam Studies of Hot Atom Chemical Reactions: Reactive Scattering of Energetic Deuterium Atoms

    DOE R&D Accomplishments [OSTI]

    Continetti, R. E.; Balko, B. A.; Lee, Y. T.

    1989-02-01

    A brief review of the application of the crossed molecular beams technique to the study of hot atom chemical reactions in the last twenty years is given. Specific emphasis is placed on recent advances in the use of photolytically produced energetic deuterium atoms in the study of the fundamental elementary reactions D + H{sub 2} -> DH + H and the substitution reaction D + C{sub 2}H{sub 2} -> C{sub 2}HD + H. Recent advances in uv laser and pulsed molecular beam techniques have made the detailed study of hydrogen atom reactions under single collision conditions possible.

  17. Epitaxial thin film growth of LiH using a liquid-Li atomic template

    SciTech Connect (OSTI)

    Oguchi, Hiroyuki; Ikeshoji, Tamio; Orimo, Shin-ichi; Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro; Kuwano, Hiroki

    2014-11-24

    We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al{sub 2}O{sub 3} substrates indicated polycrystalline films with a LiAlO{sub 2} secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides.

  18. Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

    SciTech Connect (OSTI)

    Napari, Mari Malm, Jari; Lehto, Roope; Julin, Jaakko; Arstila, Kai; Sajavaara, Timo; Lahtinen, Manu

    2015-01-15

    ZnO films were grown by atomic layer deposition at 35?C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30?nm) with a film surface roughness up to 6?nm (RMS). The introduction of Al{sub 2}O{sub 3} seed layer enhanced the initial ZnO growth substantially and changed the surface morphology as well as the crystallinity of the deposited ZnO films. Furthermore, the water contact angles of the ZnO films were measured, and upon ultraviolet illumination, the ZnO films on all the substrates became hydrophilic, independent of the film crystallinity.

  19. Epitaxial single-crystal thin films of MnxTi1-xO2-δ grown on...

    Office of Scientific and Technical Information (OSTI)

    Epitaxial single-crystal thin films of MnxTi1-xO2- grown on (rutile)TiO2 substrates with ... Title: Epitaxial single-crystal thin films of MnxTi1-xO2- grown on (rutile)TiO2 ...

  20. The atomization of water-oil emulsions

    SciTech Connect (OSTI)

    Broniarz-Press, L.; Ochowiak, M.; Rozanski, J.; Woziwodzki, S.

    2009-09-15

    The paper presents the results of experimental studies on atomization of the emulsions flowing through twin-fluid atomizers obtained by the use of the digital microphotography method. The main elements of the test installation were: nozzle, reservoir, pump and measurement units of liquid flow. The photographs were taken by a digital camera with automatic flash at exposure time of 1/8000 s and subsequently analyzed using Image Pro-Plus. The oils used were mineral oils 20-90, 20-70, 20-50 and 20-30. The studies were performed at flow rates of liquid phase changed from 0.0014 to 0.011 (dm{sup 3}/s) and gas phase changed from 0.28 to 1.4 (dm{sup 3}/s), respectively. The analysis of photos shows that the droplets being formed during the liquid atomization have very different sizes. The smallest droplets have diameters of the order of 10 {mu}m. The experimental results showed that the changes in physical properties of a liquid phase lead to the significant changes in the spray characteristics. The analysis of the photos of water and emulsions atomization process showed that the droplet sizes are dependent on gas and liquid flow rates, construction of nozzle and properties of liquid. The differences between characteristics of atomization for water and emulsions have been observed. Analysis of photos on forming the droplets in air-water and air-emulsions systems showed that droplets are bigger in air-emulsion system (at the same value of gas to liquid mass ratio). The values of Sauter mean diameter (SMD) increased with increase of volume fraction of oil in emulsion. The droplet size increased with emulsion viscosity. (author)

  1. High data-rate atom interferometers through high recapture efficiency

    SciTech Connect (OSTI)

    Biedermann, Grant; Rakholia, Akash Vrijal; McGuinness, Hayden

    2015-01-27

    An inertial sensing system includes a magneto-optical trap (MOT) that traps atoms within a specified trapping region. The system also includes a cooling laser that cools the trapped atoms so that the atoms remain within the specified region for a specified amount of time. The system further includes a light-pulse atom interferometer (LPAI) that performs an interferometric interrogation of the atoms to determine phase changes in the atoms. The system includes a controller that controls the timing of MOT and cooling laser operations, and controls the timing of interferometric operations to substantially recapture the atoms in the specified trapping region. The system includes a processor that determines the amount inertial movement of the inertial sensing system based on the determined phase changes in the atoms. Also, a method of inertial sensing using this inertial sensing system includes recapture of atoms within the MOT following interferometric interrogation by the LPAI.

  2. Wide aperture seismic recording in offshore west Sicily and Bolivia

    SciTech Connect (OSTI)

    Tilander, N.G.; Lattimore, R.K.

    1994-12-31

    Seismic operations using the Wide Aperture Recording (WAR) technique were carried out in offshore west Sicily (16.5 km offsets) and in the Sub-Andean Cordillera of Bolivia (9.0 km offsets) where conventional offset data have traditionally proved inadequate for imaging complex subsurface structures. In both cases, noise-free wide aperture events were visible at long offsets, and were successfully stacked using both hyperbolic and linear moveout. In the Sicily datasets, the resulting seismic images disagree with earlier structural interpretations, but the lack of reliable ``calibration`` data in terms of well control or usable conventional seismic data make final evaluation and interpretation of the Sicily wide aperture data ambiguous. In Bolivia good quality seismic data are present across a portion of the WAR survey; the results show that the wide aperture technique may produce a valid structural image, provided the subsurface geometries are sufficiently broad and shallow. For tight structures, the technique is unlikely to produce valid images. In general, the authors` studies show that considerable effort is required at the data processing and interpretation stage, including full waveform and ray-trace modeling, in order to identify event arrivals and to attempt to validate the wide aperture structural images. Reliable calibration data in the form of well control or conventional seismic data are needed in order to provide an understanding of the WAR results.

  3. Nonlinear spectroscopic effects in quantum gases induced by atom-atom interactions

    SciTech Connect (OSTI)

    Safonov, A. I. Safonova, I. I.; Yasnikov, I. S.

    2013-05-15

    We consider nonlinear spectroscopic effects-interaction-enhanced double resonance and spectrum instability-that appear in ultracold quantum gases owing to collisional frequency shift of atomic transitions and, consequently, due to the dependence of the frequencies on the population of various internal states of the particles. Special emphasis is put to two simplest cases, (a) the gas of two-level atoms and (b) double resonance in a gas of three-level bosons, in which the probe transition frequency remains constant.

  4. Lesson 3 - Atoms and Isotopes | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    3 - Atoms and Isotopes Lesson 3 - Atoms and Isotopes You've probably heard people refer to nuclear energy as "atomic energy." Why? Nuclear energy is the energy that is stored in the bonds of atoms, inside the nucleus. Nuclear power plants are designed to capture this energy as heat and convert it to electricity. This lesson looks closely at what atoms are and how atoms store energy. This lesson covers the following topics: Matter Molecules Elements Chemical reaction Periodic table The

  5. Estimating System-wide Impacts of Smart Grid Demonstrations

    SciTech Connect (OSTI)

    Schneider, Kevin P.; Lightner, Eric M.; Fuller, Jason C.

    2015-03-01

    Quantifying the impact of a new technology on a single specific distribution feeder is relatively easy, but it does not provide insight into the complexities and variations of a system-wide deployment. It is the inability to extrapolate system-wide impacts that hinders the deployment of many promising new technologies. This paper presents a method of extrapolating technology impacts, either simulated or from a field demonstration, from a limited number of distribution feeders to a system-wide impact. The size of the system can vary from the service territory of a single utility, to a region, or to an entire country. The paper will include an example analysis using the United States Department of Energy (DOE) funded Smart Grid Investment Grant (SGIG) projects, extrapolating their benefits to a national level.

  6. Mechanism of lateral ordering of InP dots grown on InGaP layers

    SciTech Connect (OSTI)

    Bortoleto, J.R.R.; Gutierrez, H.R.; Cotta, M.A.; Bettini, J.

    2005-07-04

    The mechanisms leading to the spontaneous formation of a two-dimensional array of InP/InGaP dots grown by chemical-beam epitaxy are discussed. Samples where the InGaP buffer layer was grown at different conditions were characterized by transmission electron microscopy. Our results indicate that a periodic strain field related to lateral two-dimensional compositional modulation in the InGaP buffer layer determines the dot nucleation positions during InP growth. Although the periodic strain field in the InGaP is large enough to align the InP dots, both their shape and optical properties are effectively unaltered. This result shows that compositional modulation can be used as a tool for in situ dot positioning.

  7. International Atomic Energy Agency | National Nuclear Security

    National Nuclear Security Administration (NNSA)

    Administration International Atomic Energy Agency Secretary Moniz awards Hutcheon memorial nonproliferation fellowship to Thomas Gray Energy Secretary Ernest Moniz (second from bottom left, clockwise) and Anne Harrington, NNSA deputy administrator for Defense Nuclear Nonproliferation (sitting next to Moniz), discuss Ian Hutcheon's legacy with his wife Nancy (across from Harrington) and daughter Dana Hutcheon Gordon. Energy... DOE/NNSA's Nonproliferation Experts Lead First Workshop on the

  8. Atomization methods for forming magnet powders

    DOE Patents [OSTI]

    Sellers, Charles H.; Branagan, Daniel J.; Hyde, Timothy A.

    2000-01-01

    The invention encompasses methods of utilizing atomization, methods for forming magnet powders, methods for forming magnets, and methods for forming bonded magnets. The invention further encompasses methods for simulating atomization conditions. In one aspect, the invention includes an atomization method for forming a magnet powder comprising: a) forming a melt comprising R.sub.2.1 Q.sub.13.9 B.sub.1, Z and X, wherein R is a rare earth element; X is an element selected from the group consisting of carbon, nitrogen, oxygen and mixtures thereof; Q is an element selected from the group consisting of Fe, Co and mixtures thereof; and Z is an element selected from the group consisting of Ti, Zr, Hf and mixtures thereof; b) atomizing the melt to form generally spherical alloy powder granules having an internal structure comprising at least one of a substantially amorphous phase or a substantially nanocrystalline phase; and c) heat treating the alloy powder to increase an energy product of the alloy powder; after the heat treatment, the alloy powder comprising an energy product of at least 10 MGOe. In another aspect, the invention includes a magnet comprising R, Q, B, Z and X, wherein R is a rare earth element; X is an element selected from the group consisting of carbon, nitrogen, oxygen and mixtures thereof; Q is an element selected from the group consisting of Fe, Co and mixtures thereof; and Z is an element selected from the group consisting of Ti, Zr, Hf and mixtures thereof; the magnet comprising an internal structure comprising R.sub.2.1 Q.sub.13.9 B.sub.1.

  9. First principle thousand atom quantum dot calculations

    SciTech Connect (OSTI)

    Wang, Lin-Wang; Li, Jingbo

    2004-03-30

    A charge patching method and an idealized surface passivation are used to calculate the single electronic states of IV-IV, III-V, II-VI semiconductor quantum dots up to a thousand atoms. This approach scales linearly and has a 1000 fold speed-up compared to direct first principle methods with a cost of eigen energy error of about 20 meV. The calculated quantum dot band gaps are parametrized for future references.

  10. L. James Rainwater and the Atomic Nuclei

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    L. James Rainwater and the Atomic Nucleus Resources with Additional Information James Rainwater Courtesy AIP Emilio Segre Visual Archives, W. F. Meggers Gallery of Nobel Laureates "During W.W. II, I [James Rainwater] worked ... [on the] Manhattan Project, mainly doing pulsed neutron spectroscopy using the small Columbia cyclotron. ... [Maria Geoppert-Mayer] shell model suggestion in 1949 was a great triumph and fitted my belief that a nuclear shell model should represent a proper approach

  11. AtomsPeace_Dec2003.qxd

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atoms for Peace after 50 Years: The New Challenges and Opportunities December 2003 UCRL-TR-200927 This document was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor the University of California nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or

  12. Do triatomic molecules echo atomic periodicity?

    SciTech Connect (OSTI)

    Hefferlin, R. Barrow, J.

    2015-03-30

    Demonstrations of periodicity among triatomic-molecular spectroscopic constants underscore the role of the periodic law as a foundation of chemistry. The objective of this work is to prepare for another test using vibration frequencies ?{sub 1} of free, ground-state, main-group triatomic molecules. Using data from four data bases and from computation, we have collected ?{sub 1} data for molecules formed from second period atoms.

  13. Classical and quantum chaos in atomic systems

    SciTech Connect (OSTI)

    Delande, D.; Buchleitner, A. [Universite Pierre et Marie Curie, Paris (France)

    1994-12-31

    Atomic systems played a major role in the birth and growth of quantum mechanics. One central idea was to relate the well-known classical motion of the electron of a hydrogen atom--an ellipsis around the nucleus--to the experimentally observed quantization of the energy levels. This is the aim of the Bohr and Bohr-Sommerfeld models. These simple semiclassical models were unable to make any reliable prediction on the energy spectrum of the next simplest atom, helium. Because of the great success of quantum mechanics, the problem of correspondence between the classical and the quantal dynamics has not received much attention in the last 60 years. The fundamental question is (Gutzwiller, 1990). How can classical mechanics be understood as a limiting case within quantum mechanics? For systems with time-independent one-dimensional dynamics like the harmonic oscillator and the hydrogen atom, the correspondence is well understood. The restriction to such simple cases creates the erroneous impression that the classical behavior of simple systems is entirely comprehensible and easily described. During the last 20 years it has been recognized that this in not true and that a complex behavior can be obtained from simple equations of motion. This usually happens when the motion is chaotic, that is, unpredictable on a long time scale although perfectly deterministic (Henon, 1983). A major problem is that of understanding how the regular or chaotic behavior of the classical system is manifest in its quantum properties, especially in the semiclassical limit. 53 refs., 15 figs., 1 tab.

  14. Material and detector properties of cadmium manganese telluride (Cd1-xMnxTe) crystals grown by the modified floating-zone method

    SciTech Connect (OSTI)

    Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Roy, U. N.; Yang, G.; Liu, T.; Zhong, R.; Schneelock, J.; James, R. B.

    2014-12-24

    We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd1-xMnxTe; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd1-xMnxTe crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Thus, our experimental results show that CMT crystals grown by the modified floating zone method apparently are free from Te inclusions. However, we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.

  15. Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond

    SciTech Connect (OSTI)

    Altukhov, A. A.; Vikharev, A. L.; Gorbachev, A. M.; Dukhnovsky, M. P.; Zemlyakov, V. E.; Ziablyuk, K. N.; Mitenkin, A. V.; Muchnikov, A. B. Radishev, D. B.; Ratnikova, A. K.; Fedorov, Yu. Yu.

    2011-03-15

    The results of studies of single-crystal diamond layers with orientation (100) grown on substrates of IIa-type natural diamond by chemical-vapor deposition and of semiconductor diamond obtained subsequently by doping by implantation of boron ions are reported. Optimal conditions of postimplantation annealing of diamond that provide the hole mobility of 1150 cm{sup 2} V{sup -1} s{sup -1} (the highest mobility obtained so far for semiconductor diamond after ion implantation) are given.

  16. First AID (Atom counting for Isotopic Determination).

    SciTech Connect (OSTI)

    Roach, J. L.; Israel, K. M.; Steiner, R. E.; Duffy, C. J.; Roench, F. R.

    2002-01-01

    Los Alamos National Laboratory (LANL) has established an in vitro bioassay monitoring program in compliance with the requirements in the Code of Federal Regulations, 10 CFR 835, Occupational Radiation Protection. One aspect of this program involves monitoring plutonium levels in at-risk workers. High-risk workers are monitored using the ultra-sensitive Therrnal Ionization Mass Spectrometry (TIMS) technique to ensure compliance with DOE standards. TIMS is used to measure atom ratios of 239Pua nd 240Puw ith respect to a tracer isotope ('Pu). These ratios are then used to calculate the amount of 239Pu and 240Pup resent. This low-level atom counting technique allows the calculation of the concentration levels of 239Pu and 240Pu in urine for at risk workers. From these concentration levels, dose assessments can be made and worker exposure levels can be monitored. Detection limits for TIMS analysis are on the order of millions of atoms, which translates to activity levels of 150 aCi 239Pua nd 500 aCi for 240Pu. pCi for Our poster presentation will discuss the ultra-sensitive, low-level analytical technique used to measure plutonium isotopes and the data verification methods used for validating isotopic measurements.

  17. The national ignition facility and atomic data

    SciTech Connect (OSTI)

    Crandall, David H.

    1998-07-08

    The National Ignition Facility (NIF) is under construction, capping over 25 years of development of the inertial confinement fusion concept by providing the facility to obtain fusion ignition in the laboratory for the first time. The NIF is a 192 beam glass laser to provide energy controlled in space and time so that a millimeter-scale capsule containing deuterium and tritium can be compressed to fusion conditions. Light transport, conversion of light in frequency, interaction of light with matter in solid and plasma forms, and diagnostics of extreme material conditions on small scale all use atomic data in preparing for use of the NIF. The NIF will provide opportunity to make measurements of atomic data in extreme physical environments related to fusion energy, nuclear weapon detonation, and astrophysics. The first laser beams of NIF should be operational in 2001 and the full facility completed at the end of 2003. NIF is to provide 1.8 megajoule of blue light on fusion targets and is intended to achieve fusion ignition by about the end of 2007. Today's inertial fusion development activities use atomic data to design and predict fusion capsule performance and in non-fusion applications to analyze radiation transport and radiation effects on matter. Conditions investigated involve radiation temperature of hundreds of eV, pressures up to gigabars and time scales of femptoseconds.

  18. The national ignition facility and atomic data

    SciTech Connect (OSTI)

    Crandall, D.H.

    1998-07-01

    The National Ignition Facility (NIF) is under construction, capping over 25 years of development of the inertial confinement fusion concept by providing the facility to obtain fusion ignition in the laboratory for the first time. The NIF is a 192 beam glass laser to provide energy controlled in space and time so that a millimeter-scale capsule containing deuterium and tritium can be compressed to fusion conditions. Light transport, conversion of light in frequency, interaction of light with matter in solid and plasma forms, and diagnostics of extreme material conditions on small scale all use atomic data in preparing for use of the NIF. The NIF will provide opportunity to make measurements of atomic data in extreme physical environments related to fusion energy, nuclear weapon detonation, and astrophysics. The first laser beams of NIF should be operational in 2001 and the full facility completed at the end of 2003. NIF is to provide 1.8 megajoule of blue light on fusion targets and is intended to achieve fusion ignition by about the end of 2007. Today{close_quote}s inertial fusion development activities use atomic data to design and predict fusion capsule performance and in non-fusion applications to analyze radiation transport and radiation effects on matter. Conditions investigated involve radiation temperature of hundreds of eV, pressures up to gigabars and time scales of femptoseconds. {copyright} {ital 1998 American Institute of Physics.}

  19. Atomic layer deposition of nanoporous biomaterials.

    SciTech Connect (OSTI)

    Narayan, R. J.; Adiga, S. P.; Pellin, M. J.; Curtiss, L. A.; Stafslien, S.; Chisholm, B.; Monteiro-Riviere, N. A.; Brigmon, R. L.; Elam, J. W.; Univ. of North Carolina; North Carolina State Univ.; Eastman Kodak Co.; North Dakota State Univ.; SRL

    2010-03-01

    Due to its chemical stability, uniform pore size, and high pore density, nanoporous alumina is being investigated for use in biosensing, drug delivery, hemodialysis, and other medical applications. In recent work, we have examined the use of atomic layer deposition for coating the surfaces of nanoporous alumina membranes. Zinc oxide coatings were deposited on nanoporous alumina membranes using atomic layer deposition. The zinc oxide-coated nanoporous alumina membranes demonstrated antimicrobial activity against Escherichia coli and Staphylococcus aureus bacteria. These results suggest that atomic layer deposition is an attractive technique for modifying the surfaces of nanoporous alumina membranes and other nanostructured biomaterials. Nanoporous alumina, also known as anodic aluminum oxide (AAO), is a nanomaterial that exhibits several unusual properties, including high pore densities, straight pores, small pore sizes, and uniform pore sizes. In 1953, Keller et al. showed that anodizing aluminum in acid electrolytes results in a thick layer of nearly cylindrical pores, which are arranged in a close-packed hexagonal cell structure. More recently, Matsuda & Fukuda demonstrated preparation of highly ordered platinum and gold nanohole arrays using a replication process. In this study, a negative structure of nanoporous alumina was initially fabricated and a positive structure of a nanoporous metal was subsequently fabricated. Over the past fifteen years, nanoporous alumina membranes have been used as templates for growth of a variety of nanostructured materials, including nanotubes, nanowires, nanorods, and nanoporous membranes.

  20. NIC atomic operation unit with caching and bandwidth mitigation

    DOE Patents [OSTI]

    Hemmert, Karl Scott; Underwood, Keith D.; Levenhagen, Michael J.

    2016-03-01

    A network interface controller atomic operation unit and a network interface control method comprising, in an atomic operation unit of a network interface controller, using a write-through cache and employing a rate-limiting functional unit.

  1. One Nanocrystal, Many Faces: Connecting the Atomic Surface Structures...

    Office of Science (SC) Website

    The atomic models are overlaid on the simulated images to illustrate atom positions. The Science When it comes to reducing the toxins released by burning gasoline, coal, or other ...

  2. General Atomics Hot Cell Facility, California, Site Fact Sheet

    Office of Legacy Management (LM)

    General Atomics Hot Cell Facility, California, Site. The U.S. Department of Energy Office ... After an Location of the General Atomics Hot Cell Facility, California, Site A hot cell is ...

  3. Signals from dark atom formation in halos (Journal Article) ...

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Search Results Journal Article: Signals from dark atom formation in halos Citation Details In-Document Search Title: Signals from dark atom formation in halos ...

  4. The LANL atomic kinetics modeling effort and its application...

    Office of Scientific and Technical Information (OSTI)

    An on-line version of the codes is available at http:aphysics2.lanl.govtempweb. ATOMIC kinetics modelling code uses the atomic data for LTE or NLTE population kinetics models ...

  5. Photocell utilizing a wide-bandgap semiconductor material

    DOE Patents [OSTI]

    Carlson, David E.; Williams, Brown F.

    1984-06-05

    A photocell comprises a p-i-n amorphous silicon structure having a wide bandgap layer adjacent to either the p-type or n-type layer. This structure reduces the absorption of light entering the photocell and the back-diffusion of minority carriers.

  6. Method of depositing wide bandgap amorphous semiconductor materials

    DOE Patents [OSTI]

    Ellis, Jr., Frank B.; Delahoy, Alan E.

    1987-09-29

    A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.

  7. Wide band focusing x-ray spectrograph with spatial resolution

    SciTech Connect (OSTI)

    Pikuz, S. A.; Douglass, J. D.; Shelkovenko, T. A.; Sinars, D. B.; Hammer, D. A.

    2008-01-15

    A new, wide spectral bandwidth x-ray spectrograph, the wide-bandwidth focusing spectrograph with spatial resolution (WB-FSSR), based on spherically bent mica crystals, is described. The wide bandwidth is achieved by combining three crystals to form a large aperture dispersive element. Since the WB-FSSR covers a wide spectral band, it is very convenient for application as a routine diagnostic tool in experiments in which the desired spectral coverage is different from one test to the next. The WB-FSSR has been tested in imploding wire-array experiments on a 1 MA pulsed power machine, and x-ray spectra were recorded in the 1-20 A spectral band using different orders of mica crystal reflection. Using a two mirror-symmetrically placed WB-FSSR configuration, it was also possible to distinguish between a real spectral shift and a shift of recorded spectral lines caused by the spatial distribution of the radiating plasma. A spectral resolution of about 2000 was demonstrated and a spatial resolution of {approx}100 {mu}m was achieved in the spectral band of 5-10 A in second order of mica reflection. A simple method of numerical analysis of spectrograph capability is proposed.

  8. Dynamical Crystallization in the Dipole Blockade of Ultracold Atoms

    SciTech Connect (OSTI)

    Pohl, T.; Demler, E.; Lukin, M. D.

    2010-01-29

    We describe a method for controlling many-body states in extended ensembles of Rydberg atoms, forming crystalline structures during laser excitation of a frozen atomic gas. Specifically, we predict the existence of an excitation-number staircase in laser excitation of atomic ensembles into Rydberg states. It is shown that such ordered states can be selectively excited by chirped laser pulses, and, via quantum state transfer from atoms to light, be used to create crystalline photonic states.

  9. Lesson 6 - Atoms to Electricity | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6 - Atoms to Electricity Lesson 6 - Atoms to Electricity Most power plants make electricity by boiling water to make steam that turns a turbine. A nuclear power plant works this way, too. At a nuclear power plant, splitting atoms produce the heat to boil the water. This lesson covers Inside the Reactor Heat Pressure Water Fission Control Fuel assemblies Control rods Coolant Pressure vessel Electricity Generation Generator Condenser Cooling tower Lesson 6 - Atoms to Electricity.pptx (9.7 MB) More

  10. SYMMETRY OF THE IBEX RIBBON OF ENHANCED ENERGETIC NEUTRAL ATOM...

    Office of Scientific and Technical Information (OSTI)

    English Subject: 79 ASTROPHYSICS, COSMOLOGY AND ASTRONOMY; ASYMMETRY; ATOMS; DETECTION; ENERGY DEPENDENCE; HELIOSPHERE; INTERSTELLAR SPACE; KEV RANGE; MAGNETIC FIELDS; PLASMA;...

  11. Atomic Layer Deposition (ALD) Preparation of Noble Metal Catalysts - Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    National Nuclear Security Administration | (NNSA) Explores Peaceful Uses of Nuclear Explosions Atomic Energy Commission Explores Peaceful Uses of Nuclear Explosions Nevada Test Site, NV As part of the Plowshare program seeking to develop peaceful uses for nuclear explosives, the Atomic Energy Commission conducts the Sedan test at the Nevada Test Site Programs | National Nuclear Security Administration | (NNSA)

    Takes Over Responsibility for all Atomic Energy Programs Atomic Energy

  12. DOE - Office of Legacy Management -- Gen_Atomics

    Office of Legacy Management (LM)

    General Atomics Hot Cell Facility, California, Site A Oakland Operations Office site gen_atomics_map The General Atomics Hot Cell Facility site was a research laboratory formerly operated under the DOE Oakland Operations Office, California. After remediation, the site transferred to the Office of Legacy Management in 2005. The site requires records management and stakeholder support. For more information about the General Atomics Hot Cell

  13. Gosling, The Manhattan Project: Making the Atomic Bomb | Department...

    Energy Savers [EERE]

    Operational Management History Historical Resources History Publications Gosling, The Manhattan Project: Making the Atomic Bomb Gosling, The Manhattan Project: Making...

  14. Photoluminescence of as-grown and thermal annealed SiO{sub x}/Si-nanocrystals heterolayers grown by reactive rf sputtering

    SciTech Connect (OSTI)

    Mota-Pineda, E.; Melendez-Lira, M.; Zapata-Torres, M.; Angel, P. del; Perez-Centeno, A.; Santana-Aranda, M. A.; Jimenez-Sandoval, S.

    2010-11-15

    SiO{sub x}/Si-nanocrystals (Si NCs) heterolayers were fabricated employing a rf magnetron sputtering system. The synthesis process, through modification of the oxygen partial pressure of the plasma, promotes the synthesis of stoichiometric SiO{sub 2} layers and affect the Si NCs layer giving place to SiO{sub x}/Si NCs (1.64grown samples showed strong photoluminescence (PL) bands in the visible and near-infrared regions; transmission electron microscopy measurements confirmed the presence of Si NCs. Thermal annealing at 1100 deg. C promoted the SiO{sub 2} stoichiometry in the interface and the crystallization of more Si NCs. The results allow us to clearly identify the origin of the PL bands; indicating that the near-infrared emission is related to the nonstoichiometric oxide while the red and green bands are originated in Si NCs.

  15. President Roosevelt Approves Production of Atomic Bomb | National Nuclear

    National Nuclear Security Administration (NNSA)

    Security Administration | (NNSA) Approves Production of Atomic Bomb President Roosevelt Approves Production of Atomic Bomb Washington, DC President Roosevelt approves production of the atomic bomb following receipt of a National Academy of Sciences report determining that a bomb is feasible

  16. Light pulse analysis with a multi-state atom interferometer

    SciTech Connect (OSTI)

    Herrera, I.; Lombardi, P.; Schfer, F.; Petrovic, J.; Cataliotti, F. S.

    2014-12-04

    We present a controllable multi-state cold-atom interferometer that is easy-to-use and fully merged on an atom chip. We demonstrate its applications as a sensor of the fields whose interactions with atoms are state-dependent.

  17. Method of performing MRI with an atomic magnetometer

    DOE Patents [OSTI]

    Savukov, Igor Mykhaylovich; Matlashov, Andrei Nikolaevich; Espy, Michelle A.; Volegov, Petr Lvovich; Kraus, Jr., Robert Henry; Zotev, Vadim Sergeyevich

    2012-11-06

    A method and apparatus are provided for performing an in-situ magnetic resonance imaging of an object. The method includes the steps of providing an atomic magnetometer, coupling a magnetic field generated by magnetically resonating samples of the object through a flux transformer to the atomic magnetometer and measuring a magnetic resonance of the atomic magnetometer.

  18. Method of performing MRI with an atomic magnetometer

    DOE Patents [OSTI]

    Savukov, Igor Mykhaylovich; Matlashov, Andrei Nikolaevich; Espy, Michelle A; Volegov, Petr Lvovich; Kraus, Jr., Robert Henry; Zotev, Vadim Sergeyevich

    2013-08-27

    A method and apparatus are provided for performing an in-situ magnetic resonance imaging of an object. The method includes the steps of providing an atomic magnetometer, coupling a magnetic field generated by magnetically resonating samples of the object through a flux transformer to the atomic magnetometer and measuring a magnetic resonance of the atomic magnetometer.

  19. Determination of Atomic Data Pertinent to the Fusion Energy Program

    SciTech Connect (OSTI)

    Reader, J.

    2013-06-11

    We summarize progress that has been made on the determination of atomic data pertinent to the fusion energy program. Work is reported on the identification of spectral lines of impurity ions, spectroscopic data assessment and compilations, expansion and upgrade of the NIST atomic databases, collision and spectroscopy experiments with highly charged ions on EBIT, and atomic structure calculations and modeling of plasma spectra.

  20. Plowshare Program - American Atomic Bomb Tests For Industrial Applications

    SciTech Connect (OSTI)

    2012-04-22

    The United States Atomic Energy Commission (AEC) established the Plowshare Program as a research and development activity to explore the technical and economic feasibility of using nuclear explosives for industrial applications. The reasoning was that the relatively inexpensive energy available from nuclear explosions could prove useful for a wide variety of peaceful purposes. The Plowshare Program began in 1958 and continued through 1975. Between December 1961 and May 1973, the United States conducted 27 Plowshare nuclear explosive tests comprising 35 individual detonations. Conceptually, industrial applications resulting from the use of nuclear explosives could be divided into two broad categories: 1) large-scale excavation and quarrying, where the energy from the explosion was used to break up and/or move rock; and 2) underground engineering, where the energy released from deeply buried nuclear explosives increased the permeability and porosity of the rock by massive breaking and fracturing. Possible excavation applications included: canals, harbors, highway and railroad cuts through mountains, open pit mining, construction of dams, and other quarry and construction-related projects. Underground nuclear explosion applications included: stimulation of natural gas production, preparation of leachable ore bodies for in situ leaching, creation of underground zones of fractured oil shale for in situ retorting, and formation of underground natural gas and petroleum storage reservoirs.

  1. Plowshare Program - American Atomic Bomb Tests For Industrial Applications

    ScienceCinema (OSTI)

    None

    2014-07-31

    The United States Atomic Energy Commission (AEC) established the Plowshare Program as a research and development activity to explore the technical and economic feasibility of using nuclear explosives for industrial applications. The reasoning was that the relatively inexpensive energy available from nuclear explosions could prove useful for a wide variety of peaceful purposes. The Plowshare Program began in 1958 and continued through 1975. Between December 1961 and May 1973, the United States conducted 27 Plowshare nuclear explosive tests comprising 35 individual detonations. Conceptually, industrial applications resulting from the use of nuclear explosives could be divided into two broad categories: 1) large-scale excavation and quarrying, where the energy from the explosion was used to break up and/or move rock; and 2) underground engineering, where the energy released from deeply buried nuclear explosives increased the permeability and porosity of the rock by massive breaking and fracturing. Possible excavation applications included: canals, harbors, highway and railroad cuts through mountains, open pit mining, construction of dams, and other quarry and construction-related projects. Underground nuclear explosion applications included: stimulation of natural gas production, preparation of leachable ore bodies for in situ leaching, creation of underground zones of fractured oil shale for in situ retorting, and formation of underground natural gas and petroleum storage reservoirs.

  2. On coarse projective integration for atomic deposition in amorphous systems

    SciTech Connect (OSTI)

    Chuang, Claire Y. E-mail: meister@unm.edu Sinno, Talid; Han, Sang M. E-mail: meister@unm.edu; Zepeda-Ruiz, Luis A. E-mail: meister@unm.edu

    2015-10-07

    Direct molecular dynamics simulation of atomic deposition under realistic conditions is notoriously challenging because of the wide range of time scales that must be captured. Numerous simulation approaches have been proposed to address the problem, often requiring a compromise between model fidelity, algorithmic complexity, and computational efficiency. Coarse projective integration, an example application of the “equation-free” framework, offers an attractive balance between these constraints. Here, periodically applied, short atomistic simulations are employed to compute time derivatives of slowly evolving coarse variables that are then used to numerically integrate differential equations over relatively large time intervals. A key obstacle to the application of this technique in realistic settings is the “lifting” operation in which a valid atomistic configuration is recreated from knowledge of the coarse variables. Using Ge deposition on amorphous SiO{sub 2} substrates as an example application, we present a scheme for lifting realistic atomistic configurations comprised of collections of Ge islands on amorphous SiO{sub 2} using only a few measures of the island size distribution. The approach is shown to provide accurate initial configurations to restart molecular dynamics simulations at arbitrary points in time, enabling the application of coarse projective integration for this morphologically complex system.

  3. Improved Performance of GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy Using Increased Growth Rate Instead of Surfactants

    SciTech Connect (OSTI)

    Ptak, A. J.; France, R.; Jiang, C. S.; Romero, M. J.

    2009-01-01

    GaInNAs is potentially useful for increasing the conversion efficiency of multijunction solar cells if low photocurrents and photovoltages can be increased. Wide-depletion width devices generate significant photocurrents using an n-i-p structure grown by molecular-beam epitaxy, but these wide depletion widths are only realized in a region of parameter space that leads to rough surface morphologies. Surfactants are effective at reducing the surface roughness, but lead to increased defect densities and changes in the net acceptor or donor concentration. Here, we show that increasing the growth rate of GaInNAs solar cells leads to smooth surfaces without the use of a surfactant, even at high In compositions and substrate temperatures. No degradation in material quality is observed when increasing the growth rate from 1.5 to 3.0 {micro}m/h, but a shunt resistance does appear for the high-growth-rate samples. This shunt is attributed to increased spitting of the Ga cell, leading to an increase in the oval defect density, at the higher effusion cell temperatures used to achieve high growth rates. As with the case of Bi in GaInNAs, increased growth rates also appear to increase the net donor concentration, but it is not clear if these effects have the same cause.

  4. Large-angle illumination STEM: Toward three-dimensional atom-by-atom imaging

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ishikawa, Ryo; Lupini, Andrew R.; Hinuma, Yoyo; Pennycook, Stephen

    2014-11-26

    To completely understand and control materials and their properties, it is of critical importance to determine their atomic structures in all three dimensions. Recent revolutionary advances in electron optics – the inventions of geometric and chromatic aberration correctors as well as electron source monochromators – have provided fertile ground for performing optical depth sectioning at atomic-scale dimensions. In this study we theoretically demonstrate the imaging of top/sub-surface atomic structures and identify the depth of single dopants, single vacancies and the other point defects within materials by large-angle illumination scanning transmission electron microscopy (LAI-STEM). The proposed method also allows us tomore » measure specimen properties such as thickness or three-dimensional surface morphology using observations from a single crystallographic orientation.« less

  5. Comparison of Wide-Bandgap Semiconductors for Power Electronics Applications

    SciTech Connect (OSTI)

    Ozpineci, B.

    2004-01-02

    Recent developmental advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations, new semiconductor materials for power device applications are needed. For high power requirements, wide-bandgap semiconductors like silicon carbide (SiC), gallium nitride (GaN), and diamond, with their superior electrical properties, are likely candidates to replace Si in the near future. This report compares wide-bandgap semiconductors with respect to their promise and applicability for power applications and predicts the future of power device semiconductor materials.

  6. Development of high frequency and wide bandwidth Johnson noise thermometry

    SciTech Connect (OSTI)

    Crossno, Jesse; Liu, Xiaomeng; Kim, Philip; Ohki, Thomas A.; Fong, Kin Chung

    2015-01-12

    We develop a high frequency, wide bandwidth radiometer operating at room temperature, which augments the traditional technique of Johnson noise thermometry for nanoscale thermal transport studies. Employing low noise amplifiers and an analog multiplier operating at 2 GHz, auto- and cross-correlated Johnson noise measurements are performed in the temperature range of 3 to 300 K, achieving a sensitivity of 5.5 mK (110 ppm) in 1 s of integration time. This setup allows us to measure the thermal conductance of a boron nitride encapsulated monolayer graphene device over a wide temperature range. Our data show a high power law (T ∼ 4) deviation from the Wiedemann-Franz law above T ∼ 100 K.

  7. Atomizing apparatus for making polymer and metal powders and whiskers

    DOE Patents [OSTI]

    Otaigbe, Joshua U.; McAvoy, Jon M.; Anderson, Iver E.; Ting, Jason; Mi, Jia; Terpstra, Robert

    2003-03-18

    Method for making polymer particulates, such as spherical powder and whiskers, by melting a polymer material under conditions to avoid thermal degradation of the polymer material, atomizing the melt using gas jet means in a manner to form atomized droplets, and cooling the droplets to form polymer particulates, which are collected for further processing. Atomization parameters can be controlled to produce polymer particulates with controlled particle shape, particle size, and particle size distribution. For example, atomization parameters can be controlled to produce spherical polymer powders, polymer whiskers, and combinations of spherical powders and whiskers. Atomizing apparatus also is provided for atoomizing polymer and metallic materials.

  8. Martinez Refinery Completes Plant-Wide Energy Assessment

    SciTech Connect (OSTI)

    2002-11-01

    This OIT BestPractices Case Study describes how the Equilon Enterprises oil refinery in Martinez, California undertook a plant-wide energy assessment that focused on three key areas: waste minimization, process debottlenecking, and operations optimization. The assessment yielded recommendations, which, if implemented, can save more than 6,000,000 MMBtu per year and an estimated $52,000,000 per year, plus improve process control and reduce waste.

  9. Wide swath imaging spectrometer utilizing a multi-modular design

    DOE Patents [OSTI]

    Chrisp, Michael P.

    2010-10-05

    A wide swath imaging spectrometer utilizing an array of individual spectrometer modules in the telescope focal plane to provide an extended field of view. The spectrometer modules with their individual detectors are arranged so that their slits overlap with motion on the scene providing contiguous spatial coverage. The number of modules can be varied to take full advantage of the field of view available from the telescope.

  10. Hanford Site-Wide Probabilistic Seismic Hazard Analysis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    L - Glossary of Key Terms and Symbols Hanford Site-Wide Probabilistic Seismic Hazard Analysis 2014 Appendix L Glossary of Key Terms and Symbols Definitions provided in this glossary were compiled from multiple sources, including the Senior Seismic Hazard Analysis Committee (SSHAC) guidance in NUREG/CR-6372 (Budnitz et al. 1997), NUREG-2117 (NRC 2012), and McGuire (2004). The glossary definitions are consistent with the use of the terms in the Hanford Probabilistic Seismic Hazard Analysis (PSHA)

  11. Hanfords Site-Wide Permit

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    commonly called the "site-wide permit") Ecology's role at Hanford * Ensure that Hanford cleanup protects the Columbia River by following state laws to protect our air, land and water * Protect, preserve and enhance the state's environment Why is there a permit? * Hanford made plutonium for nuclear weapons * Hanford created literally millions of tons of waste to deal with "later" * Nation enacted most environmental laws in the 1970s * Hanford regulation begins A Hanford

  12. Hybrid Wide Range Detector Amplifier - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Technologies Industrial Technologies Energy Analysis Energy Analysis Find More Like This Return to Search Hybrid Wide Range Detector Amplifier Sandia National Laboratories Contact SNL About This Technology Publications: PDF Document Publication Market Sheet (827 KB) Technology Marketing SummaryMany applications require detection of both very small and very large signals. High gain detector amplifiers provide low noise but are easily swamped by large signals. Logarithmic amplifiers

  13. Economic Impacts of a Wide Area Release of Anthrax

    SciTech Connect (OSTI)

    Judd, Kathleen S.; Olson, Jarrod; Stein, Steven L.; Lesperance, Ann M.

    2009-05-29

    This analysis explores economic impacts that might result from a wide-area release of anthrax. The intent is not to provide a quantitative analysis of such a disaster, but to: 1. Define the general categories of economic impacts that the region should be concerned about; and, 2. Explore what types of private sector businesses or industries, if any, may have the greatest impact on speeding the economic recovery of the region.

  14. Horizontal film balance having wide range and high sensitivity

    DOE Patents [OSTI]

    Abraham, B.M.; Miyano, K.; Ketterson, J.B.

    1981-03-05

    A thin-film, horizontal balance instrument is provided for measuring surface tension (surface energy) of thin films suspended on a liquid substrate. The balance includes a support bearing and an optical feedback arrangement for wide-range, high sensitivity measurements. The force on the instrument is balanced by an electromagnet, the current through the magnet providing a measure of the force applied to the instrument. A novel float construction is also disclosed.

  15. Horizontal film balance having wide range and high sensitivity

    DOE Patents [OSTI]

    Abraham, Bernard M.; Miyano, Kenjiro; Ketterson, John B.

    1983-01-01

    A thin-film, horizontal balance instrument is provided for measuring surface tension (surface energy) of thin films suspended on a liquid substrate. The balance includes a support bearing and an optical feedback arrangement for wide-range, high sensitivity measurements. The force on the instrument is balanced by an electromagnet, the current through the magnet providing a measure of the force applied to the instrument. A novel float construction is also disclosed.

  16. Horizontal film balance having wide range and high sensitivity

    DOE Patents [OSTI]

    Abraham, B.M.; Miyano, K.; Ketterson, J.B.

    1983-11-08

    A thin-film, horizontal balance instrument is provided for measuring surface tension (surface energy) of thin films suspended on a liquid substrate. The balance includes a support bearing and an optical feedback arrangement for wide-range, high sensitivity measurements. The force on the instrument is balanced by an electromagnet, the current through the magnet providing a measure of the force applied to the instrument. A novel float construction is also disclosed. 5 figs.

  17. Polarization-dependent atomic dipole traps behind a circular aperture for neutral-atom quantum computing

    SciTech Connect (OSTI)

    Gillen-Christandl, Katharina; Copsey, Bert D.

    2011-02-15

    The neutral-atom quantum computing community has successfully implemented almost all necessary steps for constructing a neutral-atom quantum computer. We present computational results of a study aimed at solving the remaining problem of creating a quantum memory with individually addressable sites for quantum computing. The basis of this quantum memory is the diffraction pattern formed by laser light incident on a circular aperture. Very close to the aperture, the diffraction pattern has localized bright and dark spots that can serve as red-detuned or blue-detuned atomic dipole traps. These traps are suitable for quantum computing even for moderate laser powers. In particular, for moderate laser intensities ({approx}100 W/cm{sup 2}) and comparatively small detunings ({approx}1000-10 000 linewidths), trap depths of {approx}1 mK and trap frequencies of several to tens of kilohertz are achieved. Our results indicate that these dipole traps can be moved by tilting the incident laser beams without significantly changing the trap properties. We also explored the polarization dependence of these dipole traps. We developed a code that calculates the trapping potential energy for any magnetic substate of any hyperfine ground state of any alkali-metal atom for any laser detuning much smaller than the fine-structure splitting for any given electric field distribution. We describe details of our calculations and include a summary of different notations and conventions for the reduced matrix element and how to convert it to SI units. We applied this code to these traps and found a method for bringing two traps together and apart controllably without expelling the atoms from the trap and without significant tunneling probability between the traps. This approach can be scaled up to a two-dimensional array of many pinholes, forming a quantum memory with single-site addressability, in which pairs of atoms can be brought together and apart for two-qubit gates for quantum computing.

  18. Exploiting Soliton Decay and Phase Fluctuations in Atom Chip Interferometry of Bose-Einstein Condensates

    SciTech Connect (OSTI)

    Scott, R. G.; Judd, T. E.; Fromhold, T. M.

    2008-03-14

    We show that the decay of a soliton into vortices provides a mechanism for measuring the initial phase difference between two merging Bose-Einstein condensates. At very low temperatures, the mechanism is resonant, operating only when the clouds start in antiphase. But at higher temperatures, phase fluctuations trigger vortex production over a wide range of initial relative phase, as observed in recent experiments at MIT. Choosing the merge time to maximize the number of vortices created makes the interferometer highly sensitive to spatially varying phase patterns and hence atomic movement.

  19. The Atomic, Molecular and Optical Science instrument at the Linac Coherent Light Source

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ferguson, Ken R.; Bucher, Maximilian; Bozek, John D.; Carron, Sebastian; Castagna, Jean-Charles; Coffee, Ryan; Curiel, G. Ivan; Holmes, Michael; Krzywinski, Jacek; Messerschmidt, Marc; et al

    2015-05-01

    The Atomic, Molecular and Optical Science (AMO) instrument at the Linac Coherent Light Source (LCLS) provides a tight soft X-ray focus into one of three experimental endstations. The flexible instrument design is optimized for studying a wide variety of phenomena requiring peak intensity. There is a suite of spectrometers and two photon area detectors available. An optional mirror-based split-and-delay unit can be used for X-ray pump–probe experiments. Recent scientific highlights illustrate the imaging, time-resolved spectroscopy and high-power density capabilities of the AMO instrument.

  20. Quantum phases of ultracold bosonic atoms in a one-dimensional optical superlattice

    SciTech Connect (OSTI)

    Dhar, Arya; Mishra, Tapan; Pai, Ramesh V.; Das, B. P.

    2011-05-15

    We analyze various quantum phases of ultracold bosonic atoms in a periodic one-dimensional optical superlattice. Our studies have been performed using the finite-size density-matrix renormalization group method in the framework of the Bose-Hubbard model. Calculations have been carried out for a wide range of densities and the energy shifts due to the superlattice potential. At commensurate fillings, we find the Mott insulator and the superfluid phases as well as Mott insulators induced by the superlattice. At a particular incommensurate density, the system is found to be in the superfluid phase coexisting with density oscillations for a certain range of parameters of the system.

  1. Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices

    SciTech Connect (OSTI)

    Zhang, D. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Bian, J.M., E-mail: jmbian@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Qin, F.W.; Wang, J.; Pan, L. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Zhao, J.M. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)] [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Zhao, Y.; Bai, Y.Z. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Du, G.T. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)] [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)

    2011-10-15

    Highlights: {yields} GaN films are deposited on diamond substrates by ECR-PEMOCVD. {yields} Influence of deposition temperature on the properties of samples is investigated. {yields} Properties of GaN films are dependent on the deposition temperature. -- Abstract: GaN films with highly c-axis preferred orientation are deposited on free-standing thick diamond films by low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N{sub 2} are applied as precursors of Ga and N, respectively. The quality of as-grown GaN films are systematically investigated as a function of deposition temperature by means of X-ray diffraction (XRD) analysis, Hall Effect measurement (HL), room temperature photoluminescence (PL) and atomic force microscopy (AFM). The results show that the dense and uniformed GaN films with highly c-axis preferred orientation are successfully achieved on free-standing diamond substrates under optimized deposition temperature of 400 {sup o}C, and the room temperature PL spectra of the optimized GaN film show a intense ultraviolet near band edge emission and a weak yellow luminescence. The obtained GaN/diamond structure has great potential for the development of high-power semiconductor devices due to its excellent heat dissipation nature.

  2. Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy

    SciTech Connect (OSTI)

    Lotsari, A.; Kehagias, Th.; Katsikini, M.; Arvanitidis, J.; Ves, S.; Komninou, Ph.; Dimitrakopulos, G. P.; Tsiakatouras, G.; Tsagaraki, K.; Georgakilas, A.; Christofilos, D.

    2014-06-07

    Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the M-shape dependence of the (112{sup }0) x-ray rocking curve widths on the beam azimuth angle, was studied by combining transmission electron microscopy observations, Raman spectroscopy, high resolution x-ray diffraction, and atomic force microscopy in a-plane GaN epilayers grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). The structural anisotropic behavior was attributed quantitatively to the high dislocation densities, particularly the Frank-Shockley partial dislocations that delimit the I{sub 1} intrinsic basal stacking faults, and to the concomitant plastic strain relaxation. On the other hand, isotropic samples exhibited lower dislocation densities and a biaxial residual stress state. For PAMBE growth, the anisotropy was correlated to N-rich (or Ga-poor) conditions on the surface during growth, that result in formation of asymmetric a-plane GaN grains elongated along the c-axis. Such conditions enhance the anisotropy of gallium diffusion on the surface and reduce the GaN nucleation rate.

  3. Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)

    SciTech Connect (OSTI)

    Bouhafs, C. Darakchieva, V.; Persson, I. L.; Persson, P. O. .; Yakimova, R.; Tiberj, A.; Paillet, M.; Zahab, A.-A.; Landois, P.; Juillaguet, S.; Schche, S.; Schubert, M.

    2015-02-28

    Understanding and controlling growth of graphene on the carbon face (C-face) of SiC presents a significant challenge. In this work, we study the structural, vibrational, and dielectric function properties of graphene grown on the C-face of 4H-SiC by high-temperature sublimation in an argon atmosphere. The effect of growth temperature on the graphene number of layers and crystallite size is investigated and discussed in relation to graphene coverage and thickness homogeneity. An amorphous carbon layer at the interface between SiC and the graphene is identified, and its evolution with growth temperature is established. Atomic force microscopy, micro-Raman scattering spectroscopy, spectroscopic ellipsometry, and high-resolution cross-sectional transmission electron microscopy are combined to determine and correlate thickness, stacking order, dielectric function, and interface properties of graphene. The role of surface defects and growth temperature on the graphene growth mechanism and stacking is discussed, and a conclusion about the critical factors to achieve decoupled graphene layers is drawn.

  4. Enhanced internal quantum efficiency and light extraction efficiency from textured GaN/AlGaN quantum wells grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Cabalu, J.S.; Thomidis, C.; Moustakas, T.D.; Riyopoulos, S.; Zhou Lin; Smith, David J.

    2006-03-15

    GaN/Al{sub 0.2}Ga{sub 0.8}N multiple quantum wells (MQWs) were grown by molecular beam epitaxy on randomly textured and atomically smooth (0001) GaN templates. Smooth and textured GaN templates were deposited on (0001) sapphire substrates by varying the III/V ratio and the substrate temperature during growth by the hydride vapor-phase epitaxy method. We find that the MQWs replicate the texture of the GaN template, which was found to have a Gaussian distribution. The peak photoluminescence intensity from the textured MQWs is always higher than from the smooth MQWs and for GaN (7 nm)/Al{sub 0.2}Ga{sub 0.8}N (8 nm) MQWs, it is 700 times higher than that from similarly produced MQWs on smooth GaN templates. This result is attributed partly to the enhancement in light extraction efficiency and partly to the enhancement in internal quantum efficiency. The origin of the increase in internal quantum efficiency is partly due to the reduction of the quantum-confined Stark effect, since the polarization vector intersects the quantum well (QW) planes at angles smaller than 90 deg. , and partly due to the charge redistribution in the QWs caused by the polarization component parallel to the planes of the QWs.

  5. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals...

    Office of Scientific and Technical Information (OSTI)

    Nuclear Radiation Detectors Citation Details In-Document Search Title: Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear ...

  6. A Green's function quantum average atom model

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Starrett, Charles Edward

    2015-05-21

    A quantum average atom model is reformulated using Green's functions. This allows integrals along the real energy axis to be deformed into the complex plane. The advantage being that sharp features such as resonances and bound states are broadened by a Lorentzian with a half-width chosen for numerical convenience. An implementation of this method therefore avoids numerically challenging resonance tracking and the search for weakly bound states, without changing the physical content or results of the model. A straightforward implementation results in up to a factor of 5 speed-up relative to an optimized orbital based code.

  7. Microwave meta-atom enhanced spintronic rectification

    SciTech Connect (OSTI)

    Gou, Peng; Xi, Fuchun; Qian, Qinbai; Xu, Jie; Gui, Y. S.; Hu, C.-M.; An, Zhenghua

    2015-04-06

    An artificial meta-atom (MA), or alternatively, a plasmonic antenna, has been demonstrated to significantly enhance the microwave spin rectifying photovoltage by more than two orders in magnitude (∼280) in the ferromagnetic resonance regime. The large enhancement is attributed to the unique structure of the MA which magnifies both microwave electric (∼5) and magnetic (∼56) fields in the same near-field spatial region. Our work develops the interdisciplinary direction with artificial and natural magnetism and may find promising applications in high-frequency or opto-spintronic devices and wireless microwave energy harvesting.

  8. Method for producing uranium atomic beam source

    DOE Patents [OSTI]

    Krikorian, Oscar H.

    1976-06-15

    A method for producing a beam of neutral uranium atoms is obtained by vaporizing uranium from a compound UM.sub.x heated to produce U vapor from an M boat or from some other suitable refractory container such as a tungsten boat, where M is a metal whose vapor pressure is negligible compared to that of uranium at the vaporization temperature. The compound, for example, may be the uranium-rhenium compound, URe.sub.2. An evaporation rate in excess of about 10 times that of conventional uranium beam sources is produced.

  9. Electric quadrupole transition probabilities for atomic lithium

    SciTech Connect (OSTI)

    elik, Gltekin; Gke, Yasin; Y?ld?z, Murat

    2014-05-15

    Electric quadrupole transition probabilities for atomic lithium have been calculated using the weakest bound electron potential model theory (WBEPMT). We have employed numerical non-relativistic HartreeFock wavefunctions for expectation values of radii and the necessary energy values have been taken from the compilation at NIST. The results obtained with the present method agree very well with the Coulomb approximation results given by Caves (1975). Moreover, electric quadrupole transition probability values not existing in the literature for some highly excited levels have been obtained using the WBEPMT.

  10. Ruthenium / aerogel nanocomposits via Atomic Layer Deposition

    SciTech Connect (OSTI)

    Biener, J; Baumann, T F; Wang, Y; Nelson, E J; Kucheyev, S O; Hamza, A V; Kemell, M; Ritala, M; Leskela, M

    2006-08-28

    We present a general approach to prepare metal/aerogel nanocomposites via template directed atomic layer deposition (ALD). In particular, we used a Ru ALD process consisting of alternating exposures to bis(cyclopentadienyl)ruthenium (RuCp{sub 2}) and air at 350 C to deposit metallic Ru nanoparticles on the internal surfaces of carbon and silica aerogels. The process does not affect the morphology of the aerogel template and offers excellent control over metal loading by simply adjusting the number of ALD cycles. We also discuss the limitations of our ALD approach, and suggest ways to overcome these.

  11. Wide-area situation awareness in electric power grid

    SciTech Connect (OSTI)

    Greitzer, Frank L.

    2010-04-28

    Two primary elements of the US energy policy are demand management and efficiency and renewable sources. Major objectives are clean energy transmission and integration, reliable energy transmission, and grid cyber security. Development of the Smart Grid seeks to achieve these goals by lowering energy costs for consumers, achieving energy independence and reducing greenhouse gas emissions. The Smart Grid is expected to enable real time wide-area situation awareness (SA) for operators. Requirements for wide-area SA have been identified among interoperability standards proposed by the Federal Energy Regulatory Commission and the National Institute of Standards and Technology to ensure smart-grid functionality. Wide-area SA and enhanced decision support and visualization tools are key elements in the transformation to the Smart Grid. This paper discusses human factors research to promote SA in the electric power grid and the Smart Grid. Topics that will be discussed include the role of human factors in meeting US energy policy goals, the impact and challenges for Smart Grid development, and cyber security challenges.

  12. Science with a wide-field UV transient explorer

    SciTech Connect (OSTI)

    Sagiv, I.; Gal-Yam, A.; Ofek, E. O.; Waxman, E.; Trakhtenbrot, B.; Topaz, J.; Aharonson, O.; Kulkarni, S. R.; Phinney, E. S.; Nakar, E.; Maoz, D.; Beichman, C.; Murthy, J.; Worden, S. P.

    2014-04-01

    The time-variable electromagnetic sky has been well-explored at a wide range of wavelengths. In contrast, the ultra-violet (UV) variable sky is relatively poorly explored, even though it offers exciting scientific prospects. Here, we review the potential scientific impact of a wide-field UV survey on the study of explosive and other transient events, as well as known classes of variable objects, such as active galactic nuclei and variable stars. We quantify our predictions using a fiducial set of observational parameters which are similar to those envisaged for the proposed ULTRASAT mission. We show that such a mission would be able to revolutionize our knowledge about massive star explosions by measuring the early UV emission from hundreds of events, revealing key physical parameters of the exploding progenitor stars. Such a mission would also detect the UV emission from many tens of tidal-disruption events of stars by supermassive black holes at galactic nuclei and enable a measurement of the rate of such events. The overlap of such a wide-field UV mission with existing and planned gravitational-wave and high-energy neutrino telescopes makes it especially timely.

  13. Atomic-scale observation of parallel development of super elasticity and reversible plasticity in GaAs nanowires

    SciTech Connect (OSTI)

    Bao, Peite; Du, Sichao; Zheng, Rongkun; Wang, Yanbo; Liao, Xiaozhou; Cui, Xiangyuan; Yen, Hung-Wei; Kong Yeoh, Wai; Ringer, Simon P.; Gao, Qiang; Hoe Tan, H.; Jagadish, Chennupati; Liu, Hongwei; Zou, Jin

    2014-01-13

    We report the atomic-scale observation of parallel development of super elasticity and reversible dislocation-based plasticity from an early stage of bending deformation until fracture in GaAs nanowires. While this phenomenon is in sharp contrast to the textbook knowledge, it is expected to occur widely in nanostructures. This work indicates that the super recoverable deformation in nanomaterials is not simple elastic or reversible plastic deformation in nature, but the coupling of both.

  14. Wide angle x-ray scattering of proteins : effect of beam exposure on protein integrity.

    SciTech Connect (OSTI)

    Fischetti, R. F.; Rodi, D. J.; Mirza, A.; Makowski, L.; Illinois Inst. of Tech.

    2003-01-01

    Wide-angle X-ray scattering patterns from proteins in solution contain information relevant to the determination of protein fold. At relevant scattering angles, however, these data are weak, and the degree to which they might be used to categorize the fold of a protein is unknown. Preliminary work has been performed at the BioCAT insertion-device beamline at the Advanced Photon Source which demonstrates that one can collect X-ray scattering data from proteins in solution to spacings of at least 2.2 {angstrom} (q = 2.8 {angstrom}-1). These data are sensitive to protein conformational states, and are in good agreement with the scattering predicted by the program CRYSOL using the known three-dimensional atomic coordinates of the protein. An important issue in the exploitation of this technique as a tool for structural genomics is the extent to which the high intensity of X-rays available at third-generation synchrotron sources chemically or structurally damage proteins. Various data-collection protocols have been investigated demonstrating conditions under which structural degradation of even sensitive proteins can be minimized, making this technique a viable tool for protein fold categorization, the study of protein folding, unfolding, protein-ligand interactions and domain movement.

  15. Effects of laser energy fluence on the onset and growth of the Rayleigh-Taylor instabilities and its influence on the topography of the Fe thin film grown in pulsed laser deposition facility

    SciTech Connect (OSTI)

    Mahmood, S. [National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Department of Physics, University of Karachi, Karachi 75270 (Pakistan); Rawat, R. S.; Wang, Y.; Lee, S.; Tan, T. L.; Springham, S. V.; Lee, P. [National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Zakaullah, M. [Department of Physics, Quaid-i-Azam University, 45320 Islamabad (Pakistan)

    2012-10-15

    The effect of laser energy fluence on the onset and growth of Rayleigh-Taylor (RT) instabilities in laser induced Fe plasma is investigated using time-resolved fast gated imaging. The snow plow and shock wave models are fitted to the experimental results and used to estimate the ablation parameters and the density of gas atoms that interact with the ablated species. It is observed that RT instability develops during the interface deceleration stage and grows for a considerable time for higher laser energy fluence. The effects of RT instabilities formation on the surface topography of the Fe thin films grown in pulsed laser deposition system are investigated (i) using different laser energy fluences for the same wavelength of laser radiation and (ii) using different laser wavelengths keeping the energy fluence fixed. It is concluded that the deposition achieved under turbulent condition leads to less smooth deposition surfaces with bigger sized particle agglomerates or network.

  16. The Atomic Safety and Licensing Board Panel

    SciTech Connect (OSTI)

    1998-03-01

    Through the Atomic Energy Act, Congress made is possible for the public to get a full and fair hearing on civilian nuclear matters. Individuals who are directly affected by any licensing action involving a facility producing or utilizing nuclear materials may participate in a formal hearing, on the record, before independent judges on the Atomic Safety and Licensing Board Panel (ASLBP or Panel). Frequently, in deciding whether a license, permit, amendment, or extension should be granted to a particular applicant, the Panel members must be more than mere umpires. If appropriate, they are authorized to go beyond the issues the parties place before them in order to identify, explore, and resolve significant questions involving threats to the public health and safety that come to a board`s attention during the proceedings. This brochure explains the purpose of the panel. Also addressed are: type of hearing handled; method of public participation; formality of hearings; high-level waste; other panel responsibilities and litigation technology.

  17. New directions in optical atomic spectrometry

    SciTech Connect (OSTI)

    de Galan, L.

    1986-05-01

    Soon after its invention a successful method of analysis goes through a phase of rapid growth and exaggerated expectations before it recedes to a more balanced position in the analytical domain. Flame and furnace atomic absorption spectrometry (AAS) and inductively coupled plasma-atomic emission spectrometry (ICP-AES), as we know them now, were introduced 20 to 30 years ago, developed into commercial instruments within a decade after their first description in the scientific literature, and have now reached a state of developmental equilibrium. It is undeniable that these techniques have continued to develop, but recent advances have been largely technical and cosmetic. The emphasis on automation and software has made life much easier and has significantly reduced the demand for manpower, but it has not enlarged the analytical scope of the techniques. Many initial promises have been fulfilled, but some shortcomings persist even today. At this point it would be easy to formulate the ideal method that determines all elements from the sub-parts-per-billion level to the 100% level, simultaneously, with high precision and accuracy, and at minimal cost. Clearly, no single method can possibly match such unrealistic expectations. In this article the author has, therefore, chosen the more modest approach of identifying some weak points in available technology and analyzing possible remedies. In several cases current developments are reviewed, and novel instruments proposed in the literature are evaluated. In other cases, the problems have hardly been addressed and thus may pose a challenge for future research. 10 references, 6 tables.

  18. Low energy neutral atoms from the heliosheath

    SciTech Connect (OSTI)

    Fuselier, S. A.; Allegrini, F.; Dayeh, M. A.; Desai, M.; Lewis, W.; Livadiotis, G.; McComas, D. J. E-mail: fallegrini@swri.edu E-mail: mdesai@swri.edu E-mail: george.livadiotis@swri.org; and others

    2014-04-01

    In the heliosheath beyond the termination shock, low energy (<0.5 keV) neutral atoms are created by charge exchange with interstellar neutrals. Detecting these neutrals from Earth's orbit is difficult because their flux is reduced substantially by ionization losses as they propagate from about 100 to 1 AU and because there are a variety of other signals and backgrounds that compete with this weak signal. Observations from IBEX-Lo and -Hi from two opposing vantage points in Earth's orbit established a lower energy limit of about 0.1 keV on measurements of energetic neutral atoms (ENAs) from the heliosphere and the form of the energy spectrum from about 0.1 to 6 keV in two directions in the sky. Below 0.1 keV, the detailed ENA spectrum is not known, and IBEX provides only upper limits on the fluxes. However, using some assumptions and taking constraints on the spectrum into account, we find indications that the spectrum turns over at an energy between 0.1 and 0.2 keV.

  19. Catalyst and its diameter dependent growth kinetics of CVD grown GaN nanowires

    SciTech Connect (OSTI)

    Samanta, Chandan [Department of Physics, Indian Institute of Technology Kanpur (India)] [Department of Physics, Indian Institute of Technology Kanpur (India); Chander, D. Sathish [Department of Physics, Indian Institute of Technology Kanpur (India) [Department of Physics, Indian Institute of Technology Kanpur (India); Department of Mechanical Engineering, Indian Institute of Technology Kanpur (India); Ramkumar, J. [Department of Mechanical Engineering, Indian Institute of Technology Kanpur (India)] [Department of Mechanical Engineering, Indian Institute of Technology Kanpur (India); Dhamodaran, S., E-mail: kdams2003@gmail.com [Department of Physics, Indian Institute of Technology Kanpur (India)

    2012-04-15

    Graphical abstract: GaN nanowires with controlled diameter and aspect ratio has been grown using a simple CVD technique. The growth kinetics of CVD grown nanowires investigated in detail for different catalysts and their diameters. A critical diameter important to distinguish the growth regimes has been discussed in detail. The results are important which demonstrates the growth of diameter and aspect ratio controlled GaN nanowires and also understand their growth kinetics. Highlights: Black-Right-Pointing-Pointer Controlled diameter and aspect ratio of GaN nanowires achieved in simple CVD reactor. Black-Right-Pointing-Pointer Nanowire growth kinetics for different catalyst and its diameters were understood. Black-Right-Pointing-Pointer Adatoms vapor pressure inside reactor plays a crucial role in growth kinetics. Black-Right-Pointing-Pointer Diffusion along nanowire sidewalls dominate for gold and nickel catalysts. Black-Right-Pointing-Pointer Gibbs-Thomson effect dominates for palladium catalyst. -- Abstract: GaN nanowires were grown using chemical vapor deposition with controlled aspect ratio. The catalyst and catalyst-diameter dependent growth kinetics is investigated in detail. We first discuss gold catalyst diameter dependent growth kinetics and subsequently compare with nickel and palladium catalyst. For different diameters of gold catalyst there was hardly any variation in the length of the nanowires but for other catalysts with different diameter a strong length variation of the nanowires was observed. We calculated the critical diameter dependence on adatoms pressure inside the reactor and inside the catalytic particle. This gives an increasing trend in critical diameter as per the order gold, nickel and palladium for the current set of experimental conditions. Based on the critical diameter, with gold and nickel catalyst the nanowire growth was understood to be governed by limited surface diffusion of adatoms and by Gibbs-Thomson effect for the palladium

  20. Photopumped red-emitting InP/In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition

    SciTech Connect (OSTI)

    Ryou, J. H.; Dupuis, R. D.; Walter, G.; Kellogg, D. A.; Holonyak, N.; Mathes, D. T.; Hull, R.; Reddy, C. V.; Narayanamurti, V.

    2001-06-25

    We report the 300 K operation of optically pumped red-emitting lasers fabricated from InP self-assembled quantum dots embedded in In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P layers on GaAs (100) substrates grown by metalorganic chemical vapor deposition. Quantum dots grown at 650{degree}C on In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P layers have a high density on the order of 10{sup 10} cm{sup {minus}2} and the dominant size of individual quantum dots ranges from {similar_to}5 to {similar_to}10 nm for 7.5 monolayer {open_quotes}equivalent growth.{close_quotes} These InP/In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P quantum dot heterostructures are characterized by atomic force microscopy, high-resolution transmission electron microscopy, and photoluminescence. Laser structures are prepared from wafers having two vertically stacked InP quantum dot active layers within a 100-nm-thick In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P waveguide and upper and lower 600 nm InAlP cladding layers. We observe lasing at {lambda}{similar_to}680 nm at room temperature in optically pumped samples. {copyright} 2001 American Institute of Physics.

  1. Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

    SciTech Connect (OSTI)

    Van Bui, Hao Wiggers, Frank B.; Gupta, Anubha; Nguyen, Minh D.; Aarnink, Antonius A. I.; Jong, Michel P. de; Kovalgin, Alexey Y.

    2015-01-01

    The authors have studied and compared the initial growth and properties of AlN films deposited on Si(111) by thermal and plasma-enhanced atomic layer deposition (ALD) using trimethylaluminum and either ammonia or a N{sub 2}-H{sub 2} mixture as precursors. In-situ spectroscopic ellipsometry was employed to monitor the growth and measure the refractive index of the films during the deposition. The authors found that an incubation stage only occurred for thermal ALD. The linear growth for plasma-enhanced ALD (PEALD) started instantly from the beginning due to the higher nuclei density provided by the presence of plasma. The authors observed the evolution of the refractive index of AlN during the growth, which showed a rapid increase up to a thickness of about 30?nm followed by a saturation. Below this thickness, higher refractive index values were obtained for AlN films grown by PEALD, whereas above that the refractive index was slightly higher for thermal ALD films. X-ray diffraction characterization showed a wurtzite crystalline structure with a (101{sup }0) preferential orientation obtained for all the layers with a slightly better crystallinity for films grown by PEALD.

  2. Observation of spin-charge conversion in chemical-vapor-deposition-grown single-layer graphene

    SciTech Connect (OSTI)

    Ohshima, Ryo; Sakai, Atsushi; Ando, Yuichiro; Shiraishi, Masashi; Shinjo, Teruya; Kawahara, Kenji; Ago, Hiroki

    2014-10-20

    Conversion of pure spin current to charge current in single-layer graphene (SLG) is investigated by using spin pumping. Large-area SLG grown by chemical vapor deposition is used for the conversion. Efficient spin accumulation in SLG by spin pumping enables observing an electromotive force produced by the inverse spin Hall effect (ISHE) of SLG. The spin Hall angle of SLG is estimated to be 6.1 × 10{sup −7}. The observed ISHE in SLG is ascribed to its non-negligible spin-orbit interaction in SLG.

  3. JETS AND WIDE-ANGLE OUTFLOWS IN CEPHEUS E: NEW EVIDENCE FROM SPITZER

    SciTech Connect (OSTI)

    Velusamy, T.; Langer, W. D.; Kumar, M. S. N.; Grave, J. M. C. E-mail: William.D.Langer@jpl.nasa.gov E-mail: jgrave@astro.up.pt

    2011-11-01

    Outflows and jets are believed to play a crucial role in determining the mass of the central protostar and its planet-forming disk by virtue of their ability to transport energy, mass, and momentum of the surrounding material, and thus terminate the infall stage in star and disk formation. In some protostellar objects both wide-angle outflows and collimated jets are seen, while in others only one is observed. Spitzer provides unprecedented sensitivity in the infrared to study both the jet and outflow features. Here, we use HiRes deconvolution to improve the visualization of spatial morphology by enhancing resolution (to subarcsecond levels in the Infrared Array Camera (IRAC) bands) and removing the contaminating sidelobes from bright sources. We apply this approach to study the jet and outflow features in Cep E, a young, energetic Class 0 protostar. In the reprocessed images we detect (1) wide-angle outflow seen in scattered light, (2) morphological details on at least 29 jet-driven bow shocks and jet heads or knots, (3) three compact features in 24 {mu}m continuum image as atomic/ionic line emission coincident with the jet heads, and (4) a flattened {approx}35'' size protostellar envelope seen against the interstellar background polycyclic aromatic hydrocarbon emission as an absorption band across the protostar at 8 {mu}m. By separating the protostellar photospheric scattered emission in the wide-angle cavity from the jet emission we show that we can study directly the scattered light spectrum. We present the H{sub 2} emission line spectra, as observed in all IRAC bands, for 29 knots in the jets and bow shocks and use them in the IRAC color-color space as a diagnostic of the thermal gas in the shocks driven by the jets. The data presented here will enable detailed modeling of the individual shocks retracing the history of the episodic jet activity and the associated accretion on to the protostar. The Spitzer data analysis presented here shows the richness of its

  4. Development of Autonomous Magnetometer Rotorcraft For Wide Area Assessment

    SciTech Connect (OSTI)

    Mark D. McKay; Matthew O. Anderson

    2011-08-01

    Large areas across the United States and internationally are potentially contaminated with unexploded ordinance (UXO), with some ranges encompassing tens to hundreds of thousands of acres. Technologies are needed which will allow for cost effective wide area scanning with (1) near 100% coverage and (2) near 100% detection of subsurface ordnance or features indicative of subsurface ordnance. The current approach to wide area assessment is a multi-level one, in which medium - altitude fixed wing optical imaging is used for an initial site assessment. This assessment is followed with low altitude manned helicopter based magnetometry. Subsequent to this wide area assessment targeted surface investigations are performed using either towed geophysical sensor arrays or man portable sensors. In order to be an effective tool for small UXO detection, the sensing altitude for magnetic site investigations needs to be on the order of 1 to 3 meters. These altitude requirements mean that manned helicopter surveys will generally only be feasible in large, open and relatively flat terrains. While such surveys are effective in mapping large areas relatively fast there are substantial mobilization/demobilization, staffing and equipment costs associated with these surveys, resulting in costs of approximately $100-$150/acre. In addition, due to the low altitude there are substantial risks to pilots and equipment. Surface towed arrays provide highresolution maps but have other limitations, e.g. in their ability to navigate rough terrain effectively. Thus there is a need for other systems, which can be used for effective data collection. An Unmanned Aerial Vehicle (UAV) magnetometer platform is an obvious alternative. The motivation behind such a system is that it reduces risk to operators, is lower in initial and Operational and Maintenance (O&M) costs (and can thus potentially be applied to smaller sites) and has the potential of being more effective in terms of detection and possibly

  5. Amplifier circuit operable over a wide temperature range

    DOE Patents [OSTI]

    Kelly, Ronald D.; Cannon, William L.

    1979-01-01

    An amplifier circuit having stable performance characteristics over a wide temperature range from approximately 0.degree. C up to as high as approximately 500.degree. C, such as might be encountered in a geothermal borehole. The amplifier utilizes ceramic vacuum tubes connected in directly coupled differential amplifier pairs having a common power supply and a cathode follower output stage. In an alternate embodiment, for operation up to 500.degree. C, positive and negative power supplies are utilized to provide improved gain characteristics, and all electrical connections are made by welding. Resistor elements in this version of the invention are specially heat treated to improve their stability with temperature.

  6. Wide band cryogenic ultra-high vacuum microwave absorber

    DOE Patents [OSTI]

    Campisi, I.E.

    1992-05-12

    An absorber waveguide assembly for absorbing higher order modes of microwave energy under cryogenic ultra-high vacuum conditions, that absorbs wide-band multi-mode energy. The absorber is of a special triangular shape, made from flat tiles of silicon carbide and aluminum nitride. The leading sharp end of the absorber is located in a corner of the waveguide and tapers to a larger cross-sectional area whose center is located approximately in the center of the wave guide. The absorber is relatively short, being of less height than the maximum width of the waveguide. 11 figs.

  7. A Wide Range Neutron Detector for Space Nuclear Reactor Applications

    SciTech Connect (OSTI)

    Nassif, Eduardo; Sismonda, Miguel; Matatagui, Emilio; Pretorius, Stephan

    2007-01-30

    We propose here a versatile and innovative solution for monitoring and controlling a space-based nuclear reactor that is based on technology already proved in ground based reactors. A Wide Range Neutron Detector (WRND) allows for a reduction in the complexity of space based nuclear instrumentation and control systems. A ground model, predecessor of the proposed system, has been installed and is operating at the OPAL (Open Pool Advanced Light Water Research Reactor) in Australia, providing long term functional data. A space compatible Engineering Qualification Model of the WRND has been developed, manufactured and verified satisfactorily by analysis, and is currently under environmental testing.

  8. Wide band cryogenic ultra-high vacuum microwave absorber

    DOE Patents [OSTI]

    Campisi, Isidoro E. (Newport News, VA)

    1992-01-01

    An absorber wave guide assembly for absorbing higher order modes of microwave energy under cryogenic ultra-high vacuum conditions, that absorbs wide-band multi-mode energy. The absorber is of a special triangular shape, made from flat tiles of silicon carbide and aluminum nitride. The leading sharp end of the absorber is located in a corner of the wave guide and tapers to a larger cross-sectional area whose center is located approximately in the center of the wave guide. The absorber is relatively short, being of less height than the maximum width of the wave guide.

  9. Hanford Site-Wide Probabilistic Seismic Hazard Analysis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Example Application of Approach 3 to Develop Soil Hazard Curves Hanford Site-Wide Probabilistic Seismic Hazard Analysis 2014 Appendix K - Example Application of Approach 3 to Develop Soil Hazard Curves The seismic hazard results presented in Chapter 10.0 represent the hazard at the baserock horizon defined to be at the top of the Wanapum basalts, which is encountered at depths of between 332 and 446 m at the hazard calculation Sites A-E. As discussed in Section 10.5, the recommended approach

  10. Hanford Site-Wide Probabilistic Seismic Hazard Analysis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Revision 1) Example Application of Approach 3 to Develop Soil Hazard Curves Hanford Site-Wide Probabilistic Seismic Hazard Analysis 2014 K.1 Appendix K - Example Application of Approach 3 to Develop Soil Hazard Curves The seismic hazard results presented in Chapter 10.0 represent the hazard at the baserock horizon defined to be at the top of the Wanapum basalts, which is encountered at depths of between 332 and 446 m at the hazard calculation Sites A-E. As discussed in Section 10.5, the

  11. Atoms for Peace after Fifty Years

    SciTech Connect (OSTI)

    Joeck, N; Lehman, R; Vergino, E; Schock, R

    2004-03-15

    President Eisenhower's hopes for nuclear technology still resonate, but the challenges to fulfilling them are much different today. On December 8, 1953, President Eisenhower, returning from his meeting with the leaders of Britain and France at the Bermuda Summit, flew directly to New York to address the United Nations General Assembly. His presentation, known afterwards as the ''Atoms for Peace'' speech, was bold, broad, and visionary. Eisenhower highlighted dangers associated with the further spread of nuclear weapons and the end of the thermonuclear monopoly, but the president also pointed to opportunities. Earlier that year, Stalin had died and the Korean War armistice was signed. Talks on reunification of Austria were about to begin. The speech sought East-West engagement and outlined a framework for reducing nuclear threats to security while enhancing the civilian benefits of nuclear technology. One specific proposal offered to place surplus military fissile material under the control of an ''international atomic energy agency'' to be used for peaceful purposes, especially economic development. Eisenhower clearly recognized the complex interrelationships between different nuclear technologies and the risks and the benefits that accrue from each. The widespread use of civilian nuclear technology and absence of any use of a nuclear weapon during the next half-century reflects success in his approach. Today, the world faces choices about nuclear technology that have their parallels in the Eisenhower calculus and its legacy. Although his specific fissile material proposal was never implemented, his broader themes gave impetus to agreements such as the nuclear Non-Proliferation Treaty (NPT) and institutions such as the International Atomic Energy Agency (IAEA). The resulting governance process has promoted some and restricted other nuclear technology. Perhaps even more influential was Eisenhower's overarching recommendation that we try to reduce the risks and seek

  12. Geological problems in radioactive waste isolation - A world wide review

    SciTech Connect (OSTI)

    Witherspoon, P.A.

    1991-06-01

    The problem of isolating radioactive wastes from the biosphere presents specialists in the earth sciences with some of the most complicated problems they have ever encountered. This is especially true for high-level waste (HLW), which must be isolated in the underground and away from the biosphere for thousands of years. The most widely accepted method of doing this is to seal the radioactive materials in metal canisters that are enclosed by a protective sheath and placed underground in a repository that has been carefully constructed in an appropriate rock formation. Much new technology is being developed to solve the problems that have been raised, and there is a continuing need to publish the results of new developments for the benefit of all concerned. Table 1 presents a summary of the various formations under investigation according to the reports submitted for this world wide review. It can be seen that in those countries that are searching for repository sites, granitic and metamorphic rocks are the prevalent rock type under investigation. Six countries have developed underground research facilities that are currently in use. All of these investigations are in saturated systems below the water table, except the United States project, which is in the unsaturated zone of a fractured tuff.

  13. Group III-nitride thin films grown using MBE and bismuth

    DOE Patents [OSTI]

    Kisielowski, Christian K.; Rubin, Michael

    2002-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  14. Group III-nitride thin films grown using MBE and bismuth

    DOE Patents [OSTI]

    Kisielowski, Christian K.; Rubin, Michael

    2000-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  15. Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

    SciTech Connect (OSTI)

    Duc, Tran Thien; Pozina, Galia; Son, Nguyen Tien; Janzn, Erik; Hemmingsson, Carl; Ohshima, Takeshi

    2014-09-08

    Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phase epitaxy were studied by deep level transient spectroscopy. In as-grown materials, six electron traps, labeled D2 (E{sub C}0.24?eV), D3 (E{sub C}0.60?eV), D4 (E{sub C}0.69?eV), D5 (E{sub C}0.96?eV), D7 (E{sub C}1.19?eV), and D8, were observed. After 2?MeV electron irradiation at a fluence of 1??10{sup 14?}cm{sup ?2}, three deep electron traps, labeled D1 (E{sub C}0.12?eV), D5I (E{sub C}0.89?eV), and D6 (E{sub C}1.14?eV), were detected. The trap D1 has previously been reported and considered as being related to the nitrogen vacancy. From the annealing behavior and a high introduction rate, the D5I and D6 centers are suggested to be related to primary intrinsic defects.

  16. Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

    2012-06-01

    We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

  17. Atomic line emission analyzer for hydrogen isotopes

    DOE Patents [OSTI]

    Kronberg, J.W.

    1993-03-30

    Apparatus for isotopic analysis of hydrogen comprises a low pressure chamber into which a sample of hydrogen is introduced and then exposed to an electrical discharge to excite the electrons of the hydrogen atoms to higher energy states and thereby cause the emission of light on the return to lower energy states, a Fresnel prism made at least in part of a material anomalously dispersive to the wavelengths of interest for dispersing the emitted light, and a photodiode array for receiving the dispersed light. The light emitted by the sample is filtered to pass only the desired wavelengths, such as one of the lines of the Balmer series for hydrogen, the wavelengths of which differ slightly from one isotope to another. The output of the photodiode array is processed to determine the relative amounts of each isotope present in the sample. Additionally, the sample itself may be recovered using a metal hydride.

  18. Friction forces on atoms after acceleration

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Intravaia, Francesco; Mkrtchian, Vanik E.; Buhmann, Stefan Yoshi; Scheel, Stefan; Dalvit, Diego A. R.; Henkel, Carsten

    2015-05-12

    The aim of this study is to revisit the calculation of atom–surface quantum friction in the quantum field theory formulation put forward by Barton (2010 New J. Phys. 12 113045). We show that the power dissipated into field excitations and the associated friction force depend on how the atom is boosted from being initially at rest to a configuration in which it is moving at constant velocity (v) parallel to the planar interface. In addition, we point out that there is a subtle cancellation between the one-photon and part of the two-photon dissipating power, resulting in a leading order contributionmore » to the frictional power which goes as v4. These results are also confirmed by an alternative calculation of the average radiation force, which scales as v3.« less

  19. Resonance ionization spectroscopy of zirconium atoms

    SciTech Connect (OSTI)

    Page, R.H.; Dropinski, S.C.; Worden, E.F. Jr.; Stockdale, J.A.D.

    1992-05-01

    We have examined the stepwise-resonant three-photon-ionization spectrum of neutral zirconium atoms using three separately-tunable pulsed visible dye lasers. Lifetimes of even-parity levels (measured with delayed-photoionization technique) range from 10 to 100 nsec. Direct ionization cross sections appear to be less than 10{sup {minus}17} cm{sup 2}; newly-detected autoionizing levels give peak ionization cross sections (inferred from saturation fluences) up to 10{sup {minus}15} cm{sup 2}. Members of Rydberg series converging to the 315 and 1323 cm{sup {minus}1} levels of Zr{sup +} were identified. ``Clumps`` of autoionizing levels are thought to be due to Rydberg-valence mixing.

  20. Atomic line emission analyzer for hydrogen isotopes

    DOE Patents [OSTI]

    Kronberg, James W.

    1993-01-01

    Apparatus for isotopic analysis of hydrogen comprises a low pressure chamber into which a sample of hydrogen is introduced and then exposed to an electrical discharge to excite the electrons of the hydrogen atoms to higher energy states and thereby cause the emission of light on the return to lower energy states, a Fresnel prism made at least in part of a material anomalously dispersive to the wavelengths of interest for dispersing the emitted light, and a photodiode array for receiving the dispersed light. The light emitted by the sample is filtered to pass only the desired wavelengths, such as one of the lines of the Balmer series for hydrogen, the wavelengths of which differ slightly from one isotope to another. The output of the photodiode array is processed to determine the relative amounts of each isotope present in the sample. Additionally, the sample itself may be recovered using a metal hydride.