National Library of Energy BETA

Sample records for atmospheric optics sb

  1. Atmospheric optical calibration system

    DOE Patents [OSTI]

    Hulstrom, R.L.; Cannon, T.W.

    1988-10-25

    An atmospheric optical calibration system is provided to compare actual atmospheric optical conditions to standard atmospheric optical conditions on the basis of aerosol optical depth, relative air mass, and diffuse horizontal skylight to global horizontal photon flux ratio. An indicator can show the extent to which the actual conditions vary from standard conditions. Aerosol scattering and absorption properties, diffuse horizontal skylight to global horizontal photon flux ratio, and precipitable water vapor determined on a real-time basis for optical and pressure measurements are also used to generate a computer spectral model and for correcting actual performance response of a photovoltaic device to standard atmospheric optical condition response on a real-time basis as the device is being tested in actual outdoor conditions. 7 figs.

  2. Atmospheric optical calibration system

    DOE Patents [OSTI]

    Hulstrom, Roland L.; Cannon, Theodore W.

    1988-01-01

    An atmospheric optical calibration system is provided to compare actual atmospheric optical conditions to standard atmospheric optical conditions on the basis of aerosol optical depth, relative air mass, and diffuse horizontal skylight to global horizontal photon flux ratio. An indicator can show the extent to which the actual conditions vary from standard conditions. Aerosol scattering and absorption properties, diffuse horizontal skylight to global horizontal photon flux ratio, and precipitable water vapor determined on a real-time basis for optical and pressure measurements are also used to generate a computer spectral model and for correcting actual performance response of a photovoltaic device to standard atmospheric optical condition response on a real-time basis as the device is being tested in actual outdoor conditions.

  3. Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

    SciTech Connect (OSTI)

    Lin, Chien-Hung Lee, Chien-Ping

    2014-10-21

    High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 μm were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5 meV.

  4. Effect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers

    SciTech Connect (OSTI)

    Janiak, F. Motyka, M.; S?k, G.; Dyksik, M.; Ryczko, K.; Misiewicz, J.; Weih, R.; Hfling, S.; Kamp, M.; Patriarche, G.

    2013-12-14

    Optical properties of molecular beam epitaxially grown type II W shaped GaSb/AlSb/InAs/GaIn(As)Sb/InAs/AlSb/GaSb quantum wells (QWs) designed for the active region of interband cascade lasers have been investigated. Temperature dependence of Fourier-transformed photoluminescence and photoreflectance was employed to probe the effects of addition of arsenic into the original ternary valence band well of GaInSb. It is revealed that adding arsenic provides an additional degree of freedom in terms of band alignment and strain tailoring and allows enhancing the oscillator strength of the active type II transition. On the other hand, however, arsenic incorporation apparently also affects the structural and optical material quality via generating carrier trapping states at the interfaces, which can deteriorate the radiative efficiency. These have been evidenced in several spectroscopic features and are also confirmed by cross-sectional transmission electron microscopy images. While arsenic incorporation into type II QWs is a powerful heterostructure engineering tool for optoelectronic devices, a compromise has to be found between ideal band structure properties and high quality morphological properties.

  5. Optical properties of amorphous and crystalline Sb-doped SnO{sub 2} thin films studied with spectroscopic ellipsometry: Optical gap energy and effective mass

    SciTech Connect (OSTI)

    So, Hyeon Seob; Park, Jun-Woo; Jung, Dae Ho; Ko, Kun Hee; Lee, Hosun

    2015-08-28

    We investigated the optical properties of amorphous and crystalline antimony (Sb)-doped tin dioxide (SnO{sub 2}) thin films grown using the co-sputtering deposition method at room temperature. We used undoped and Sb-doped (8 wt. %) SnO{sub 2} targets. Varying the relative power ratio of the two targets, we controlled the Sb-composition of the SnO{sub 2}:Sb thin films up to 2.3 at. % of Sb contents. Through annealing, the as-grown amorphous SnO{sub 2}:Sb thin films were transformed to crystalline thin films. Dielectric functions were obtained from the measured ellipsometry angles, Ψ and Δ, using the Drude and parametric optical constant models. We determined the absorption coefficients and optical gap energies of the SnO{sub 2}:Sb thin films from the dielectric functions. We found increasing optical gap energy with increasing Sb composition. Increases in the Drude tail amplitudes, a signature of free carrier concentrations, were found in annealed, crystalline thin films with increasing Sb composition. The increase in the optical gap energy with increasing Sb composition was mainly attributed to the Burstein-Moss effect. Using Hall effect measurements, we obtained Hall carrier concentrations (N{sub Hall}) and electron Hall mobilities (μ{sub Hall}). The carrier concentrations and mobilities increased from 2.6 × 10{sup 19 }cm{sup −3} and 1.0 cm{sup 2}/(V s) to 2.0 × 10{sup 20 }cm{sup −1} and 7.2 cm{sup 2}/(V s), respectively, with increasing Sb contents. This result suggests that the nominally undoped SnO{sub 2} films are unintentionally n-type doped. Assuming that the N{sub Hall} and optical carrier concentrations (N{sub opt}) were the same, we obtained the effective masses of the SnO{sub 2}:Sb thin films with increasing Sb compositions. The effective masses of the SnO{sub 2}:Sb thin films increased from 0.245 m{sub 0} to 0.4 m{sub 0} with increasing Sb doping contents, and the nonparabolicity of the conduction band was estimated. We

  6. In-situ characterization of the optical and electronic properties in GeTe and GaSb thin films

    SciTech Connect (OSTI)

    Velea, A.; Popescu, M.; Galca, A. C.; Socol, G.

    2015-10-07

    GeTe and GaSb thin films obtained by pulsed laser deposition were investigated by spectroscopic ellipsometry at controlled temperatures. The GeTe films were fully amorphous, while the GaSb films were partially crystalized in the as-deposited state. The Tauc-Lorentz model was employed to fit the experimental data. From the temperature study of the optical constants, it was observed the crystallization in the 150–160 °C range of GeTe amorphous films and between 230 and 240 °C of GaSb amorphous phase. A second transition in the resonance energy and the broadening parameter of the Lorentz oscillator was observed due to the crystallization of Sb after 250 °C. The temperatures of 85 °C and 130 °C are noticed as the start of the relaxation of the amorphous GeTe phase and as-deposited GaSb. The peaks of the imaginary part of the dielectric function red shifted after the phase change, while the variation with temperature of the crystalline phase follows the Varshni law. The electron-phonon coupling constants are 2.88 and 1.64 for c-GeTe and c-GaSb, respectively. An optical contrast up to 60% was obtained for GeTe films and a maximum value of 7.5% is revealed in the case GaSb, which is altered by the partial crystallinity of the as-deposited films.

  7. Structural and optical properties of Sb{sub 2}S{sub 3} nanocrystals in glass

    SciTech Connect (OSTI)

    Mishra, Rakesh K. Kashyap, Raman Vedeshwar, A. G. Tandon, R. P.

    2014-04-24

    In this work conventional solid state precipitation method is adopted to fabricate Sb{sub 2}S{sub 3} nanocrystals in glass. The glass composition is optimized for proper host glass matrix to grow antimony trisulphide semiconductor quantum dots. The dot size is modified by heat treatment of glass samples in the temperature range from 550°C to 700°C for various time durations. Structural studies are carried out by X-ray diffraction and transmission electron microscopy and nanoparticles with size ranges from 8 nm to 70 nm are obtained. Quantum dots so grown were further characterized by optical absorption spectroscopy and a blue shift is observed for absorption edge energy that conform the quantum confinement effect.

  8. Electronic and optical properties of TiCoSb under different pressures

    SciTech Connect (OSTI)

    Xu Bin; Zhang Jing; Liang Jianchu; Gao Guoying; Yi Lin

    2012-08-15

    The electronic structure and optical properties of TiCoSb are studied by the first-principles calculation. It is found that the band gaps increase with the pressure increasing. It is noted that the increase of the band gap is due to the electrons of Ti 3d and Co 3d of the valence band (VB) shifting away from the Fermi level. Our calculation indicates that TiCoSb has the large density of state near the Fermi level; moreover, the changes of the density of states near the Fermi level mainly are caused by Ti 3d and Co 3d under the different pressures. It is noted that the absorption edge increases with an increase of pressure. As pressure increases, the static dielectric constants {epsilon}{sub 1}(0) decrease. All peaks of the imaginary part of the dielectric function {epsilon}{sub 2}({omega}) move towards higher energies within increasing pressure. - Graphical abstract: The first peak positions of the absorption spectrum increase and shift the high energy with an increase of pressure. The buleshift of the absorption edge could be observed. Highlights: Black-Right-Pointing-Pointer It is noted that the increase of the band gap is due to the electrons of Ti 3d and Co 3d of VB moving away from the Fermi level. Black-Right-Pointing-Pointer It is noted that the absorption edge increases with an increase of pressure. Black-Right-Pointing-Pointer As pressure increases, the static dielectric constant {epsilon}{sub 1}(0) decreases. Black-Right-Pointing-Pointer All peaks of the imaginary part of the dielectric function {epsilon}{sub 2}({omega}) move to wards higher energies within creasing pressure.

  9. Structural, electronic and optical properties of La{sub x}Sc{sub 1-x}Sb alloys

    SciTech Connect (OSTI)

    Ghezali, M.

    2015-03-30

    We present calculations of the structural, electronic and optic properties of LaxSc1-xSb ternary alloys for 0≤x≤1, by using the first principle full potential linear muffin-tin orbital (FPLMTO) method based on the local density approximation (LDA). the lattice constant, bulk modulus, electronic band structures, density of state and optical properties such as dielectric functions, refractive index and extinction coefficient are calculated and discussed for (x=0.25, 0.5 and 0.75). Our results agree well with the available data in the literature.

  10. PRECISION DETERMINATION OF ATMOSPHERIC EXTINCTION AT OPTICAL...

    Office of Scientific and Technical Information (OSTI)

    State-of-the-art models of atmospheric radiation transport and modern codes are used to ... Country of Publication: United States Language: English Subject: 79 ASTROPHYSICS, ...

  11. Ab initio density functional theory investigation of the structural, electronic and optical properties of Ca{sub 3}Sb{sub 2} in hexagonal and cubic phases

    SciTech Connect (OSTI)

    Arghavani Nia, Borhan; Sedighi, Matin; Shahrokhi, Masoud; Moradian, Rostam

    2013-11-15

    A density functional theory study of structural, electronical and optical properties of Ca{sub 3}Sb{sub 2} compound in hexagonal and cubic phases is presented. In the exchangecorrelation potential, generalized gradient approximation (PBE-GGA) has been used to calculate lattice parameters, bulk modulus, cohesive energy, dielectric function and energy loss spectra. The electronic band structure of this compound has been calculated using the above two approximations as well as another form of PBE-GGA, proposed by Engle and Vosko (EV-GGA). It is found that the hexagonal phase of Ca{sub 3}Sb{sub 2} has an indirect gap in the ??N direction; while in the cubic phase there is a direct-gap at the ? point in the PBE-GGA and EV-GGA. Effects of applying pressure on the band structure of the system studied and optical properties of these systems were calculated. - Graphical abstract: A density functional theory study of structural, electronic and optical properties of Ca{sub 3}Sb{sub 2} compound in hexagonal and cubic phases is presented. Display Omitted - Highlights: Physical properties of Ca{sub 3}Sb{sub 2} in hexagonal and cubic phases are investigated. It is found that the hexagonal phase is an indirect gap semiconductor. Ca{sub 3}Sb{sub 2} is a direct-gap semiconductor at the ? point in the cubic phase. By increasing pressure the semiconducting band gap and anti-symmetry gap are decreased.

  12. Spectral behavior of the optical constants in the visible/near infrared of GeSbSe chalcogenide thin films grown at glancing angle

    SciTech Connect (OSTI)

    Martin-Palma, R. J.; Ryan, Joseph V.; Pantano, C. G.

    2007-04-23

    GeSbSe chalcogenide thin films were deposited using glancing angle deposition onto transparent glass substrates for the determination of the spectral behavior of the optical constants (index of refraction n and extinction coefficient k) in the visible and near infrared ranges (400-2500 nm) as a function of the deposition angle. Computational simulations based on the matrix method were employed to determine the values of the optical constants of the different films from the experimental reflectance and transmittance spectra. A significant dependence of the overall optical behavior on the deposition angle is found. Furthermore, the band gap of the GeSbSe thin films was calculated. The accurate determination of the optical constants of films grown at glancing angle will enable the development of sculptured thin film fiber-optic chemical sensors and biosensors.

  13. Femtosecond laser-induced crystallization of amorphous Sb{sub 2}Te{sub 3} film and coherent phonon spectroscopy characterization and optical injection of electron spins

    SciTech Connect (OSTI)

    Li Simian; Huang Huan; Wang Yang; Wu Yiqun; Gan Fuxi; Zhu Weiling; Wang Wenfang; Chen Ke; Yao Daoxin; Lai Tianshu

    2011-09-01

    A femtosecond laser-irradiated crystallizing technique is tried to convert amorphous Sb{sub 2}Te{sub 3} film into crystalline film. Sensitive coherent phonon spectroscopy (CPS) is used to monitor the crystallization of amorphous Sb{sub 2}Te{sub 3} film at the original irradiation site. The CPS reveals that the vibration strength of two phonon modes that correspond to the characteristic phonon modes (A{sub 1g}{sup 1} and E{sub g}) of crystalline Sb{sub 2}Te{sub 3} enhances with increasing laser irradiation fluence (LIF), showing the rise of the degree of crystallization with LIF and that femtosecond laser irradiation is a good post-treatment technique. Time-resolved circularly polarized pump-probe spectroscopy is used to investigate electron spin relaxation dynamics of the laser-induced crystallized Sb{sub 2}Te{sub 3} film. Spin relaxation process indeed is observed, confirming the theoretical predictions on the validity of spin-dependent optical transition selection rule and the feasibility of transient spin-grating-based optical detection scheme of spin-plasmon collective modes in Sb{sub 2}Te{sub 3}-like topological insulators.

  14. Hierardlicsl Diagnosis V. V. Zuev Institute of Atmospheric Optics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hierardlicsl Diagnosis V. V. Zuev Institute of Atmospheric Optics Siberian Branch of the Russian Academy of Sciences Tomsk, Russia Systematic observations of the earth's ozone layer over the last ten years indicate a steady decrease of ozone content in the stratospheric maximum and, on the contrary, a increase of ozone concentrations in the troposphere. This trend is illustrated clearly by the results of 20 years' observations of high-altitude ozone concentration distribution in the troposphere

  15. Optical remote diagnostics of atmospheric propagating beams of ionizing radiation

    DOE Patents [OSTI]

    Karl, Jr., Robert R. (Los Alamos, NM)

    1990-01-01

    Data is obtained for use in diagnosing the characteristics of a beam of ionizing radiation, such as charged particle beams, neutral particle beams, and gamma ray beams. In one embodiment the beam is emitted through the atmosphere and produces nitrogen fluorescence during passage through air. The nitrogen fluorescence is detected along the beam path to provide an intensity from which various beam characteristics can be calculated from known tabulations. Optical detecting equipment is preferably located orthogonal to the beam path at a distance effective to include the entire beam path in the equipment field of view.

  16. Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

    SciTech Connect (OSTI)

    Aytac, Y. Flatté, M. E.; Boggess, T. F.; Olson, B. V.; Kim, J. K.; Shaner, E. A.; Hawkins, S. D.; Klem, J. F.

    2015-09-28

    Temperature-dependent measurements of carrier recombination rates using a time-resolved optical pump-probe technique are reported for mid-wave infrared InAs/InAs{sub 1−x}Sb{sub x} type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions, a 16 K band-gap of ∼235 ± 10 meV was achieved for five unintentionally and four intentionally doped T2SLs. Carrier lifetimes were determined by fitting lifetime models based on Shockley-Read-Hall (SRH), radiative, and Auger recombination processes to the temperature and excess carrier density dependent data. The minority carrier (MC), radiative, and Auger lifetimes were observed to generally increase with increasing antimony content and decreasing layer thickness for the unintentionally doped T2SLs. The MC lifetime is limited by SRH processes at temperatures below 200 K in the unintentionally doped T2SLs. The extracted SRH defect energy levels were found to be near mid-bandgap. Also, it is observed that the MC lifetime is limited by Auger recombination in the intentionally doped T2SLs with doping levels greater than n ∼ 10{sup 16} cm{sup −3}.

  17. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect (OSTI)

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  18. Effect of hydrogenation on the electrical and optical properties of GaSb

    SciTech Connect (OSTI)

    Dutta, P.S.; Bhat, H.L.; Kumar, V.

    1996-12-31

    The effect of hydrogen plasma treatment on the optical and electrical properties of Gallium Antimonide bulk single crystals is presented. Plasma exposure gives rise to a layer of defects on the surface. These defects introduce multiple trap levels in the band gap from which a slow emission of carriers is observed during the capacitance-voltage measurements. On removal of the defect layer by controlled etching, the effects of hydrogen passivation are seen. The results of optical measurements indicate that passivation of shallow acceptors is more efficient than that of the donors and in general the passivation efficiency depends on the doping level. Passivation of deep levels and extended defects like grain boundaries and dislocations has also been observed. The thermal stability of the passivated deep level and extended defects is higher than that of the shallow level.

  19. Lightweight Integrated Optical Sensor for Atmospheric Measurements on Mobile Platforms

    SciTech Connect (OSTI)

    Parameswaran, Krishnan R.

    2013-12-02

    The goal of the Phase I program was to develop a novel open path sensor platform technology based on integration of semiconductor waveguides with efficient optoelectronic components on a monolithic platform. The successful Phase I effort resulted in demonstration of a novel optical resonator structure based on semiconductor high contrast gratings (HCGs) that will enable implementation of an ultra-compact, low-power gas sensor suitable for use on mobile platforms. Extensive numerical modeling was performed to design a device optimized for measuring CO2 at a wavelength for which a laser was available for proof of concept. Devices were fabricated and tested to match the target wavelength, angle, and operating temperature. This demonstration is the first implementation of HCGs at the wavelengths of interest and shows the flexibility of the proposed architecture for gas sensing applications. The measured cavity Q was lower than anticipated due to fabrication process challenges. The PSI and UC Berkeley team has identified solutions to these challenges and will produce optimized devices in a Phase II program where a prototype sensor will be fabricated and tested.

  20. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  1. SB 1149 Schools Program

    Office of Energy Efficiency and Renewable Energy (EERE)

    Oregon's retail electricity restructuring law, SB 1149, includes a requirement for the state's two largest utilities, Pacific Power and Portland General Electric, to collect a 3% public purpose...

  2. Electronic and optical properties of the LiCdX (X = N, P, As and Sb) filled-tetrahedral compounds with the Tran–Blaha modified Becke–Johnson density functional

    SciTech Connect (OSTI)

    Bouhemadou, A.; Bin-Omran, S.; Allali, D.; Al-Otaibi, S.M.; Khenata, R.; Al-Douri, Y.; Chegaar, M.; Reshak, A.H.

    2015-04-15

    Highlights: • Electronic and optical properties of the LiCdX compounds have been predicted. • Tran–Blaha-modified Becke–Johnson functional significantly improves the band gap. • We predict a direct band gap in all of the considered LiCdX compounds. • Origin of the peaks in the optical spectra is determined. - Abstract: The structural, electronic and optical properties of the LiCdN, LiCdP, LiCdAs and LiCdSb filled-tetrahedral compounds have been explored from first-principles. The calculated structural parameters are consistent with the available experimental results. Since DFT with the common LDA and GGA underestimates the band gap, we use a new developed functional able to accurately describe the electronic structure of semiconductors, namely the Tran–Blaha-modified Becke–Johnson potential. The four investigated compounds demonstrate semiconducting behavior with direct band gap ranging from about 0.32 to 1.65 eV. The charge-carrier effective masses are evaluated at the topmost valence band and at the bottommost conduction band. The evolution of the value and nature of the energy band gap under pressure effect is also investigated. The frequency-dependent complex dielectric function and some macroscopic optical constants are estimated. The microscopic origins of the structures in the optical spectra are determined in terms of the calculated energy band structures.

  3. Optical absorption and intrinsic recombination in relaxed and strained InAs{sub 1–x}Sb{sub x} alloys for mid-wavelength infrared application

    SciTech Connect (OSTI)

    Wen, Hanqing; Bellotti, Enrico

    2015-11-30

    The intrinsic carrier recombination lifetime in relaxed and strained InAs{sub 1−x}Sb{sub x} alloys is investigated using the full-band Green's function theory. By computing the phonon-perturbed electron self-energy of the system, both direct and phonon-assisted indirect Auger and radiative processes are studied as functions of antimony molar fractions, lattice temperatures and applied in-plane biaxial strains. To improve the overall accuracy of the calculation, an empirical pseudopotential band structure for the alloy is also fitted to the measured band extrema and effective masses under different biaxial strains. A set of effective screened potentials valid for all the needed antimony fractions x and biaxial strains ϵ, therefore, is obtained and applied to the calculation. The results showed reduced total Auger recombination rates and enhanced radiative recombination rates in InAsSb alloys at room temperature when a compressive strain is applied. Furthermore, the study on the widely employed mid-wavelength infrared detector material, InAs{sub 0.91}Sb{sub 0.09}, strained by an InAs substrate, demonstrated that much longer minority carrier lifetime can be achieved compared to that in the lattice-matched situation when the lattice temperature is above 200 K.

  4. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

    SciTech Connect (OSTI)

    Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

    2014-11-11

    Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

  5. Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Liu, Shi; Li, Hua; Cellek, Oray O.; Ding, Ding; Lin, Zhi-Yuan; Steenbergen, Elizabeth H.; He, Zhao-Yu; Johnson, Shane R.; Zhang, Yong-Hang; Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 ; Shen, Xiao-Meng; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 ; Fan, Jin; Smith, David J.; Department of Physics, Arizona State University, Tempe, Arizona 85287 ; Lu, Jing

    2013-02-18

    Molecular beam epitaxial growth of strain-balanced InAs/InAs{sub 1-x}Sb{sub x} type-II superlattices on GaSb substrates has been investigated for substrate temperatures from 400 Degree-Sign C to 450 Degree-Sign C. The Sb composition is found to vary linearly with substrate temperature at constant V/III ratios. For samples grown at the optimized substrate temperature (410 Degree-Sign C), superlattice zero-order peak full-width at half-maximums are routinely less than 25 arc sec using high-resolution X-ray diffraction. Cross-sectional transmission electron microscopy images show the absence of any visible defects. Strong photoluminescence covers a wavelength range from 5.5 to 13 {mu}m at 12 K. Photoluminescence linewidth simulations show satisfactory agreement with experiments.

  6. CRAD, NNSA- Safety Basis (SB)

    Broader source: Energy.gov [DOE]

    CRAD for Safety Basis (SB). Criteria Review and Approach Documents (CRADs) that can be used to conduct a well-organized and thorough assessment of elements of safety and health programs.

  7. Optical emission spectroscopy of microwave-plasmas at atmospheric pressure applied to the growth of organosilicon and organotitanium nanopowders

    SciTech Connect (OSTI)

    Kilicaslan, A.; Levasseur, O.; Roy-Garofano, V.; Profili, J.; Moisan, M.; Stafford, L.; Côté, C.; Sarkissian, A.

    2014-03-21

    An atmospheric-pressure plasma sustained by an electromagnetic surface wave (SW) in the microwave regime combined with a bubbler/flash evaporator for the injection of liquid precursors was used to produce organosilicon and organotitanium nanopowders. Following the addition of hexamethyldisiloxane (HMDSO) vapors in the nominally pure argon plasma, optical emission spectra revealed the apparition of strong C{sub 2} molecular bands along with Si and Balmer H emission lines. Such features were not observed in our atmospheric-pressure Ar/HMDSO discharges controlled by dielectric barriers, indicating that microwave plasmas are characterized by much higher fragmentation levels of the precursors due to much higher electron densities. Emission spectra from the Ar/HMDSO SW plasma further showed a high-intensity continuum, the intensity of which decreased with time as powders started to form on the discharge tube walls. In presence of titanium isopropoxide (TTIP) vapors in the nominally pure Ar plasma, the emission was dominated by Ar and Ti lines, with no trace of carbon and no continuum. Fourier-Transform Infrared (FTIR) Spectroscopy of the powders formed in Ar/HMDSO plasmas showed very strong Si-(CH{sub 3}){sub x} and O-Si-(CH{sub 3}){sub x} bands, which is consistent with the formation of silicon oxycarbide. Transmission Electron Microscopy (TEM) further showed tube and sheet-like nanofeatures as well as larger structures consisting of agglomerated primary clusters. On the other hand, introduction of O{sub 2} in Ar/HMDSO plasmas produced only round-like nanoparticles with strong Si-O-Si bands and no trace of carbon, consistent with the formation of SiO{sub x}. The average size of the silica nanoparticles was 50 nm. FTIR spectra of powders formed in Ar/TTIP plasmas showed strong Ti-O signals, even without the addition of O{sub 2} in the gas phase. Corresponding TEM analysis showed nano- and agglomerated features comparable to those obtained in Ar/HMDSO although the

  8. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    SciTech Connect (OSTI)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-26

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of

  9. Long-Term, Autonomous Measurement of Atmospheric Carbon Dioxide Using an Ormosil Nanocomposite-Based Optical Sensor

    SciTech Connect (OSTI)

    Kisholoy Goswami

    2005-10-11

    The goal of this project is to construct a prototype carbon dioxide sensor that can be commercialized to offer a low-cost, autonomous instrument for long-term, unattended measurements. Currently, a cost-effective CO2 sensor system is not available that can perform cross-platform measurements (ground-based or airborne platforms such as balloon and unmanned aerial vehicle (UAV)) for understanding the carbon sequestration phenomenon. The CO2 sensor would support the research objectives of DOE-sponsored programs such as AmeriFlux and the North American Carbon Program (NACP). Global energy consumption is projected to rise 60% over the next 20 years and use of oil is projected to increase by approximately 40%. The combustion of coal, oil, and natural gas has increased carbon emissions globally from 1.6 billion tons in 1950 to 6.3 billion tons in 2000. This figure is expected to reach 10 billon tons by 2020. It is important to understand the fate of this excess CO2 in the global carbon cycle. The overall goal of the project is to develop an accurate and reliable optical sensor for monitoring carbon dioxide autonomously at least for one year at a point remote from the actual CO2 release site. In Phase I of this project, InnoSense LLC (ISL) demonstrated the feasibility of an ormosil-monolith based Autonomous Sensor for Atmospheric CO2 (ASAC) device. All of the Phase I objectives were successfully met.

  10. DWPF SB6 INITIAL CPC FLOWSHEET TESTING SB6-1 TO SB6-4L TESTS OF SB6-A AND SB6-B SIMULANTS

    SciTech Connect (OSTI)

    Lambert, D.; Pickenheim, B.; Best, D.

    2009-09-09

    The Defense Waste Processing Facility (DWPF) will transition from Sludge Batch 5 (SB5) processing to Sludge Batch 6 (SB6) processing in late fiscal year 2010. Tests were conducted using non-radioactive simulants of the expected SB6 composition to determine the impact of varying the acid stoichiometry during the Sludge Receipt and Adjustment Tank (SRAT) and Slurry Mix Evaporator (SME) processes. The work was conducted to meet the Technical Task Request (TTR) HLW/DWPF/TTR-2008-0043, Rev.0 and followed the guidelines of a Task Technical and Quality Assurance Plan (TT&QAP). The flowsheet studies are performed to evaluate the potential chemical processing issues, hydrogen generation rates, and process slurry rheological properties as a function of acid stoichiometry. These studies were conducted with the estimated SB6 composition at the time of the study. This composition assumed a blend of 101,085 kg of Tank 4 insoluble solids and 179,000 kg of Tank 12 insoluble solids. The current plans are to subject Tank 12 sludge to aluminum dissolution. Liquid Waste Operations assumed that 75% of the aluminum would be dissolved during this process. After dissolution and blending of Tank 4 sludge slurry, plans included washing the contents of Tank 51 to {approx}1M Na. After the completion of washing, the plan assumes that 40 inches on Tank 40 slurry would remain for blending with the qualified SB6 material. There are several parameters that are noteworthy concerning SB6 sludge: (1) This is the second batch DWPF will be processing that contains sludge that has had a significant fraction of aluminum removed through aluminum dissolution; (2) The sludge is high in mercury, but the projected concentration is lower than SB5; (3) The sludge is high in noble metals, but the projected concentrations are lower than SB5; and(4) The sludge is high in U and Pu - components that are not added in sludge simulants. Six DWPF process simulations were completed in 4-L laboratory-scale equipment using

  11. High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

    SciTech Connect (OSTI)

    Petukhov, A. A., E-mail: andrey-rus29@rambler.ru; Zhurtanov, B. E.; Kalinina, K. V.; Stoyanov, N. D.; Salikhov, H. M.; Mikhailova, M. P.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-09-15

    The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.

  12. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  13. Phase transitions in Ge-Sb phase change materials

    SciTech Connect (OSTI)

    Raoux, Simone; Virwani, Kumar; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-03-15

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T{sub x}) also show an increase with Ge concentration closely tracking the measured values of T{sub x}. For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity.

  14. Scavenging Elemental Sb Through Addition of NbSb to Mm0.9Fe3...

    Office of Scientific and Technical Information (OSTI)

    Title: Scavenging Elemental Sb Through Addition of NbSb to Mm0.9Fe3.5Co0.5S12 Skutterudites Authors: Zhang, Long ; Zhou, Chen ; Morelli, Donald T ; Sakamoto, Jeffrey Publication ...

  15. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  16. Method of making an InAsSb/InAsSbP diode lasers

    DOE Patents [OSTI]

    Razeghi, M.

    1997-08-19

    InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 {micro}m to 5 {micro}m is possible by varying the ratio of As:Sb in the active layer. 9 figs.

  17. Method of making an InAsSb/InAsSbP diode lasers

    DOE Patents [OSTI]

    Razeghi, Manijeh

    1997-01-01

    InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer.

  18. Zirconium nitride films deposited in (Ar + N{sub 2} + H{sub 2}) sputtering atmosphere: Optical, structural, and electrical properties

    SciTech Connect (OSTI)

    Signore, M. A.; Valerini, D.; Tapfer, L.; Caretto, G.; Rizzo, A.

    2011-11-15

    Zr-N films were grown on glass substrates via radio-frequency magnetron sputtering using an Ar + N{sub 2} + H{sub 2} mixture. Hydrogen was employed in order to reduce oxygen contamination coming from background pressure, as confirmed by secondary ion mass spectroscopy analysis. The tuned process parameter was the nitrogen flux percentage (R{sub N2}) in the mixture. The crystallographic structure of the films was studied using x-ray diffraction. The measurements show that the films deposited at low R{sub N2} (lower than or equal to 50%) crystallize in the rocksalt ZrN structure. As R{sub N2} exceeds 50%, the film exhibits the co-presence of ZrN and Zr{sub 3}N{sub 4} (denoted as o-Zr{sub 3}N{sub 4}) phases. When the deposition is performed in only nitrogen atmosphere (R{sub N2} = 100%), a broad peak located at 2{theta}{approx_equal} 32.2 deg. is mainly attributed to the contribution coming from (320) planes of the o-Zr{sub 3}N{sub 4}. An envelope method, based on the optical reflection and transmission spectra taken at normal incidence, has been applied for the optical characterization of the nitride films. Such a method allows the determination of the samples' average thickness and optical constants (refractive index n and extinction coefficient k) in the ultraviolet-visible-near infrared regions. The evaluated thickness was about 2500 nm, which is in good agreement with the value obtained from profilometry. The absorption coefficient {alpha} was calculated from reflectance and transmittance spectra. The energy bandgap ranges from 2.3 eV to 2.4 eV. Electrical characterization was performed using capacitance-voltage measurements, which showed that the films evolve from insulating to semiconductor behavior when the nitrogen content in the sputtering atmosphere is decreased, confirming structural and optical results.

  19. Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1–x)2Te3

    SciTech Connect (OSTI)

    Patankar, Shreyas; Hinton, J. P.; Griesmar, Joel; Orenstein, J.; Dodge, J. S.; Kou, Xufeng; Pan, Lei; Wang, Kang L.; Bestwick, A. J.; Fox, E. J.; Goldhaber-Gordon, D.; Wang, Jing; Zhang, Shou -Cheng

    2015-12-31

    Here, we report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator (Cr0.12Bi0.26Sb0.62)2Te3. Measurements of the complex Kerr angle ΘK were performed as a function of photon energy in the range 0.8eV < ℏω < 3.0eV. We observed a peak in the real part of ΘK(ω) and zero crossing in the imaginary part that we attribute to a resonant interaction with a spin-orbit avoided crossing located ≈ 1.6 eV above the Fermi energy. The resonant enhancement allows measurement of the temperature and magnetic field dependence of ΘK in the ultrathin film limit, d ≥ 2 quintuple layers (QL). We find a sharp transition to zero remanent magnetization at 6 K for d < 8 QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.

  20. Temperature dependence of the dielectric response of AlSb

    SciTech Connect (OSTI)

    Jung, Y. W.; Kim, T. J.; Kim, Y. D.; Shin, S. H.; Kim, S. Y.; Song, J. D.

    2011-12-23

    Spectroscopic ellipometry was used to determine the optical response of an intrinsic AlSb film as a function of temperature. The 1.5 {mu}m thick film was grown on a (001) GaAs substrate by molecular beam epitaxy. Measurements were done at temperatures from 300 K to the growth temperature of 800 K over a spectral range of 0.7 to 5.0 eV. To avoid oxidation artifacts, measurements were done with the film in situ. The data were analyzed using a parametric semiconductor model for its temperature dependence.

  1. Relation between the magnetization and the electrical properties of alloy GaSb-MnSb films

    SciTech Connect (OSTI)

    Koplak, O. V.; Polyakov, A. A.; Davydov, A. B.; Morgunov, R. B.; Talantsev, A. D.; Kochura, A. V.; Fedorchenko, I. V.; Novodvorskii, O. A.; Parshina, L. S.; Khramova, O. D.; Shorokhova, A. V.; Aronzon, B. A.

    2015-06-15

    The influence of the charge carrier concentration on the magnetic properties of GaSb-MnSb alloys is studied. The ferromagnetism of GaSb-MnSb films is caused by the presence of MnSb granules and manifests itself in both magnetometric measurements and the presence of an anisotropic magnetoresistance and the anomalous Hall effect. Electric conduction is executed by charge carriers (holes) in a GaSb matrix. The magnetization of clusters depends on stoichiometry and the concentration of Mn{sup 2+} and Mn{sup 3+} ions, which is specified by the film growth conditions. At high film growth temperatures, ferromagnetic clusters containing Mn{sup 2+} ions mainly form. At low growth temperatures, an antiferromagnetic phase containing Mn{sup 3+} ions forms.

  2. SbSI nanocrystal formation in AsSbSI glass under laser beam

    SciTech Connect (OSTI)

    Azhniuk, Yu.M.; Stoyka, V.; Petryshynets, I.; Rubish, V.M.; Guranich, O.G.; Gomonnai, A.V.; Zahn, D.R.T.

    2012-06-15

    Highlights: ? AsSbSI glasses are obtained by co-melting of As{sub 2}S{sub 3} and SbSI. ? The glass structure and composition are confirmed by SEM, EDX, and Raman studies. ? Laser-induced crystallization of SbSI from the glass is observed by Raman spectroscopy. -- Abstract: AsSbSI glasses are obtained by co-melting of As{sub 2}S{sub 3} and SbSI in a broad compositional interval. Their structure and composition are confirmed by the studies of scanning electron microscopy, energy dispersive X-ray spectroscopy, and micro-Raman scattering. Laser-induced crystallization of SbSI crystallites from the glass matrix is observed in the course of the micro-Raman measurement as a result of local laser beam heating.

  3. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect (OSTI)

    Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1; Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 ; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.; Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7; Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7

    2013-09-21

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  4. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOE Patents [OSTI]

    Spahn, O.B.; Lear, K.L.

    1998-03-10

    The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

  5. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOE Patents [OSTI]

    Spahn, Olga B.; Lear, Kevin L.

    1998-01-01

    A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

  6. Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry

    SciTech Connect (OSTI)

    Webster, P. T.; Riordan, N. A.; Liu, S.; Zhang, Y.-H.; Johnson, S. R.; Steenbergen, E. H.

    2015-02-09

    Strain-balanced InAs/InAsSb superlattices offer access to the mid- to long-wavelength infrared region with what is essentially a ternary material system at the GaSb lattice constant. The absorption coefficients of InAs/InAsSb superlattices grown by molecular beam epitaxy on (100)-oriented GaSb substrates are measured at room temperature over the 30 to 800?meV photon energy range using spectroscopic ellipsometry, and the miniband structure of each superlattice is calculated using a Kronig-Penney model. The InAs/InAsSb conduction band offset is used as a fitting parameter to align the calculated superlattice ground state transition energy to the measured absorption onset at room temperature and to the photoluminescence peak energy at low temperature. It is observed that the ground state absorption coefficient and transition strength are proportional to the square of the wavefunction overlap and the ground state absorption coefficient approaches a maximum value of around 5780?cm{sup ?1} as the wavefunction overlap approaches 100%. The absorption analysis of these samples indicates that the optical joint density of states is weakly dependent on the period thickness and Sb content of the superlattice, and that wavefunction overlap is the principal design parameter in terms of obtaining strong absorption in these structures.

  7. DWPF simulant CPC studies for SB8

    SciTech Connect (OSTI)

    Koopman, D. C.; Zamecnik, J. R.

    2013-06-25

    The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing

  8. Atmospheric Chemistry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    chemistry Atmospheric Chemistry Atmospheric Chemistry is the study of the composition of the atmosphere, the sources and fates of gases and particles in air, and changes induced by ...

  9. Properties of Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} thin films obtained by pulsed laser ablation

    SciTech Connect (OSTI)

    Virt, I. S.; Rudyj, I. O.; Kurilo, I. V.; Lopatynskyi, I. Ye.; Linnik, L. F.; Tetyorkin, V. V.; Potera, P.; Luka, G.

    2013-07-15

    The properties of Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} thin films of variable thickness deposited onto Al{sub 2}O{sub 3}, Si, and KCl substrates are investigated by the method of pulsed laser ablation. The samples are obtained at a substrate temperature of 180 Degree-Sign C in a vacuum chamber with a residual pressure of 10{sup -5} Torr. The thickness of the films amounted to 40-1500 nm. The structure of the bulk material of the targets and films is investigated by the methods of X-ray diffraction and transmission high-energy electron diffraction, respectively. The electrical properties of the films are investigated in the temperature range of 253-310 K. It is shown that the films have semiconductor properties. The structural features of the films determine their optical parameters.

  10. About Effective? Height of the Aerosol Atmosphere in Visible...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Kabanov, M. V. Panchenko, Yu. A. Pkhalagov, and S. M. Sakerin Institute of Atmospheric Optics Tomsk, Russia Introduction Aerosol component of the atmosphere is one of the important...

  11. Interband magneto-spectroscopy in InSb square and parabolic quantum wells

    SciTech Connect (OSTI)

    Kasturiarachchi, T.; Edirisooriya, M.; Mishima, T. D.; Doezema, R. E.; Santos, M. B.; Saha, D.; Pan, X.; Sanders, G. D.; Stanton, C. J.

    2015-06-07

    We measure the magneto-optical absorption due to intersubband optical transitions between conduction and valence subband Landau levels in InSb square and parabolic quantum wells. InSb has the narrowest band gap (0.24 eV at low temperature) of the III–V semiconductors leading to a small effective mass (0.014 m{sub 0}) and a large g–factor (−51). As a result, the Landau level spacing is large at relatively small magnetic fields (<8 T), and one can observe spin-splitting of the Landau levels. We examine two structures: (i) a multiple-square-well structure and (ii) a structure containing multiple parabolic wells. The energies and intensities of the strongest features are well explained by a modified Pidgeon-Brown model based on an 8-band k•p model that explicitly incorporates pseudomorphic strain. The strain is essential for obtaining agreement between theory and experiment. While modeling the square well is relatively straight-forward, the parabolic well consists of 43 different layers of various thickness to approximate a parabolic potential. Agreement between theory and experiment for the parabolic well validates the applicability of the model to complicated structures, which demonstrates the robustness of our model and confirms its relevance for developing electronic and spintronic devices that seek to exploit the properties of the InSb band structure.

  12. Self-Assembled ErSb Nanostructures with Optical Applications...

    Office of Scientific and Technical Information (OSTI)

    Subject: solar (photovoltaic), solid state lighting, phonons, thermoelectric, bio-inspired, energy storage (including batteries and capacitors), electrodes - solar, defects, charge ...

  13. InAs quantum dot morphology after capping with In, N, Sb alloyed thin films

    SciTech Connect (OSTI)

    Keizer, J. G.; Koenraad, P. M.; Ulloa, J. M.; Utrilla, A. D.

    2014-02-03

    Using a thin capping layer to engineer the structural and optical properties of InAs/GaAs quantum dots (QDs) has become common practice in the last decade. Traditionally, the main parameter considered has been the strain in the QD/capping layer system. With the advent of more exotic alloys, it has become clear that other mechanisms significantly alter the QD size and shape as well. Larger bond strengths, surfactants, and phase separation are known to act on QD properties but are far from being fully understood. In this study, we investigate at the atomic scale the influence of these effects on the morphology of capped QDs with cross-sectional scanning tunneling microscopy. A broad range of capping materials (InGaAs, GaAsSb, GaAsN, InGaAsN, and GaAsSbN) are compared. The QD morphology is related to photoluminescence characteristics.

  14. DWPF Simulant CPC Studies For SB8

    SciTech Connect (OSTI)

    Newell, J. D.

    2013-09-25

    Prior to processing a Sludge Batch (SB) in the Defense Waste Processing Facility (DWPF), flowsheet studies using simulants are performed. Typically, the flowsheet studies are conducted based on projected composition(s). The results from the flowsheet testing are used to 1) guide decisions during sludge batch preparation, 2) serve as a preliminary evaluation of potential processing issues, and 3) provide a basis to support the Shielded Cells qualification runs performed at the Savannah River National Laboratory (SRNL). SB8 was initially projected to be a combination of the Tank 40 heel (Sludge Batch 7b), Tank 13, Tank 12, and the Tank 51 heel. In order to accelerate preparation of SB8, the decision was made to delay the oxalate-rich material from Tank 12 to a future sludge batch. SB8 simulant studies without Tank 12 were reported in a separate report.1 The data presented in this report will be useful when processing future sludge batches containing Tank 12. The wash endpoint target for SB8 was set at a significantly higher sodium concentration to allow acceptable glass compositions at the targeted waste loading. Four non-coupled tests were conducted using simulant representing Tank 40 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry (146% acid) SRAT testing up to 31% of the DWPF hydrogen limit. SME hydrogen generation reached 48% of of the DWPF limit for the high acid run. Two non-coupled tests were conducted using simulant representing Tank 51 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry SRAT testing up to 16% of the DWPF limit. SME hydrogen generation reached 49% of the DWPF limit for hydrogen in the SME for the high acid run. Simulant processing was successful using previously established antifoam addition strategy. Foaming during formic acid addition was not observed in any of the runs. Nitrite was destroyed in all runs and no N2O was detected

  15. Soft chemical synthesis of Ag{sub 3}SbS{sub 3} with efficient and recyclable visible light photocatalytic properties

    SciTech Connect (OSTI)

    Gusain, Meenakshi; Rawat, Pooja; Nagarajan, Rajamani

    2014-12-15

    Highlights: Highly crystalline Ag{sub 3}SbS{sub 3} synthesized using soft chemical approach. First time report of photocatalytic activity of Ag{sub 3}SbS{sub 3}. Ag{sub 3}SbS{sub 3} degraded the harmful organic dyes rapidly under visible radiation. Pseudo first order kinetics have been followed in these sets of reactions. Up to 90% of Methylene Blue degraded even after 4th cycle of catalyst reuse. Structure of catalyst is intact after reuse. As the catalyst is heavy, its separation after use is quite simple. - Abstract: Application of Ag{sub 3}SbS{sub 3}, obtained by soft chemical approach involving rapid reaction of air stable metalthiourea complexes in ethylene glycol medium, as visible light photocatalyst for the degradation of dye solutions was investigated. Ag{sub 3}SbS{sub 3} was confirmed by high resolution powder X-ray diffraction pattern and its no defined morphology was present in SEM images. From UVvis spectroscopy measurements, optical band gap of 1.77 eV was deduced for Ag{sub 3}SbS{sub 3}. Rapid degradation kinetics and recyclability was exhibited by Ag{sub 3}SbS{sub 3} towards Methylene Blue, Methyl Orange, Malachite Green, and Rhodamine 6G dye solutions under visible radiation. All these processes followed pseudo first order kinetics. High surface area (6.39 m{sup 2}/g), with mesopores (3.81 nm), arising from solvent mediated synthesis of Ag{sub 3}SbS{sub 3} has been correlated to its catalytic activity.

  16. Vacancy structures and melting behavior in rock-salt GeSbTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Bin; Wang, Xue -Peng; Shen, Zhen -Ju; Li, Xian -Bin; Wang, Chuan -Shou; Chen, Yong -Jin; Li, Ji -Xue; Zhang, Jin -Xing; Zhang, Ze; Zhang, Sheng -Bai; et al

    2016-05-03

    Ge-Sb-Te alloys have been widely used in optical/electrical memory storage. Because of the extremely fast crystalline-amorphous transition, they are also expected to play a vital role in next generation nonvolatile microelectronic memory devices. However, the distribution and structural properties of vacancies have been one of the key issues in determining the speed of melting (or amorphization), phase-stability, and heat-dissipation of rock-salt GeSbTe, which is crucial for its technological breakthrough in memory devices. Using spherical aberration-aberration corrected scanning transmission electron microscopy and atomic scale energy-dispersive X-ray mapping, we observe a new rock-salt structure with high-degree vacancy ordering (or layered-like ordering) atmore » an elevated temperature, which is a result of phase transition from the rock-salt phase with randomly distributed vacancies. First-principles calculations reveal that the phase transition is an energetically favored process. Furthermore, molecular dynamics studies suggest that the melting of the cubic rock-salt phases is initiated at the vacancies, which propagate to nearby regions. The observation of multi-rock-salt phases suggests another route for multi-level data storage using GeSbTe.« less

  17. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  18. Optical analyzer

    DOE Patents [OSTI]

    Hansen, A.D.

    1987-09-28

    An optical analyzer wherein a sample of particulate matter, and particularly of organic matter, which has been collected on a quartz fiber filter is placed in a combustion tube, and light from a light source is passed through the sample. The temperature of the sample is raised at a controlled rate and in a controlled atmosphere. The magnitude of the transmission of light through the sample is detected as the temperature is raised. A data processor, differentiator and a two pen recorder provide a chart of the optical transmission versus temperature and the rate of change of optical transmission versus temperature signatures (T and D) of the sample. These signatures provide information as to physical and chemical processes and a variety of quantitative and qualitative information about the sample. Additional information is obtained by repeating the run in different atmospheres and/or different rates or heating with other samples of the same particulate material collected on other filters. 7 figs.

  19. Fragile structural transition in Mo3Sb7

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yan, Jiaqiang -Q.; McGuire, Michael A; May, Andrew F; Parker, David S.; Mandrus, D. G.; Sales, Brian C.

    2015-01-01

    Mo3Sb7 single crystals lightly doped with Cr, Ru, or Te are studied in order to explore the interplay between superconductivity, magnetism, and the cubic-tetragonal structural transition. The structural transition at 53 K is extremely sensitive to Ru or Te substitution which introduces additional electrons, but robust against Cr substitution. We observed no sign of a structural transition in superconducting Mo2.91Ru0.09Sb7 and Mo3Sb6.975Te0.025. In contrast, 3 at.% Cr doping only slightly suppresses the structural transition to 48 K while leaving no trace of superconductivity above 1.8 K. Analysis of magnetic properties suggests that the interdimer interaction in Mo3Sb7 is near amore » critical value and essential for the structural transition. Futhermore, all dopants suppress the superconductivity of Mo3Sb7. The tetragonal structure is not necessary for superconductivity.« less

  20. The reaction mechanism of SnSb and Sb thin film anodes for Na-ion batteries studied by X-ray diffraction, 119Sn and 121Sb M ssbauer spectroscopies

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Baggetto, Loic; Hah, Hien-Yoong; Jumas, Dr. Jean-Claude; Johnson, Prof. Dr. Charles E.; Johnson, Jackie A.; Keum, Jong Kahk; Bridges, Craig A; Veith, Gabriel M

    2014-01-01

    The electrochemical reaction of Sb and SnSb anode materials with Na results in the formation of amorphous materials. To understand the resulting phases and electrochemical capacities we studied the reaction products local order using 119Sn and 121Sb M ssbauer spectroscopies in conjunction with measurements performed on model powder compounds of Na-Sn and Na-Sb to further clarify the reactions steps. For pure Sb the discharge (sodiation) starts with the formation of an amorphous phase composed of atomic environments similar to those found in NaSb, and proceeds further by the formation of environments similar to that present in Na3Sb. The reversible reactionmore » takes place during a large portion of the charge process. At full charge the anode material still contains a substantial fraction of Na, which explains the lack of recrystallization into crystalline Sb. The reaction of SnSb yields Na3Sb crystalline phase at full discharge at higher temperatures (65 and 95 C) while the room temperature reaction yields amorphous compounds. The electrochemically-driven, solid-state amorphization reaction occurring at room temperature is governed by the simultaneous formation of Na-coordinated Sn and Sb environments, as monitored by the decrease (increase) of the 119Sn (121Sb) M ssbauer isomer shifts. Overall, the monitoring of the hyperfine parameters enables to correlate the changes in Na content to the individual Sn and Sb local chemical environments.« less

  1. The reaction mechanism of SnSb and Sb thin film anodes for Na-ion batteries studied by X-ray diffraction, 119Sn and 121Sb Mössbauer spectroscopies

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Baggetto, Loïc; Hah, Hien-Yoong; Jumas, Jean-Claude; Johnson, Charles E.; Johnson, Jacqueline A.; Keum, Jong K.; Bridges, Craig A.; Veith, Gabriel M.

    2014-06-01

    The electrochemical reaction of Sb and SnSb anode materials with Na results in the formation of amorphous materials. To understand the resulting phases and electrochemical capacities we studied the reaction products local order using 119Sn and 121Sb Mössbauer spectroscopies in conjunction with measurements performed on model powder compounds of Na-Sn and Na-Sb to further clarify the reactions steps. For pure Sb the discharge (sodiation) starts with the formation of an amorphous phase composed of atomic environments similar to those found in NaSb, and proceeds further by the formation of environments similar to that present in Na3Sb. The reversible reaction takesmore » place during a large portion of the charge process. At full charge the anode material still contains a substantial fraction of Na, which explains the lack of recrystallization into crystalline Sb. The reaction of SnSb yields Na3Sb crystalline phase at full discharge at higher temperatures (65 and 95°C) while the room temperature reaction yields amorphous compounds. The electrochemically-driven, solid-state amorphization reaction occurring at room temperature is governed by the simultaneous formation of Na-coordinated Sn and Sb environments, as monitored by the decrease (increase) of the 119Sn (121Sb) Mössbauer isomer shifts. Overall, the monitoring of the hyperfine parameters enables to correlate the changes in Na content to the individual Sn and Sb local chemical environments.« less

  2. Anisotropic giant magnetoresistance in NbSb?

    SciTech Connect (OSTI)

    Wang, Kefeng [Brookhaven National Lab. (BNL), Upton, NY (United States); Graf, D. [Florida State Univ., Tallahassee, FL (United States); Li, Lijun [Brookhaven National Lab. (BNL), Upton, NY (United States); Wang, Limin [Brookhaven National Lab. (BNL), Upton, NY (United States); Petrovic, C. [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2014-12-05

    We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 10?% in 2 K and 9 T field, and 4.3 10?% in 0.4 K and 32 T field, without saturation) and field-induced metal semiconductor-like transition in NbSb?. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field in addition to the high mobility metal.

  3. Coupling Between An Optical Phonon and the Kondo Effect

    SciTech Connect (OSTI)

    Burch, Kenneth; Chia, Elbert E. M.; Talbayev, D.; Sales, Brian C; Mandrus, David; Taylor, A. J.; Averitt, R. D.

    2008-01-01

    We explore the ultrafast optical response of Yb14MnSb11, providing further evidence that this Zintl compound is one of the first examples of a ferromagnetic under-screened Kondo lattice. These experiments also provide the first demonstration of coupling between an optical phonon and the Kondo effect.

  4. Improvement of reliability and power consumption for SnSb{sub 4} phase change film composited with Ga{sub 3}Sb{sub 7} by superlattice-like method

    SciTech Connect (OSTI)

    Hu, Yifeng; Zhai, Jiwei; Zeng, Huarong; Song, Sannian; Song, Zhitang

    2015-05-07

    Superlattice-like (SLL) SnSb{sub 4}/Ga{sub 3}Sb{sub 7} (SS/GS) thin films were investigated through in-situ film resistance measurement. The optical band gap was derived from the transmittance spectra by using a UV-visible-NIR (ultraviolet-visible-near infrared) spectrophotometer. Transmission electron microscopy was used to observe the micro-structure before and after annealing. Phase change memory cells based on the SLL [SS(3 nm)/GS(4.5 nm)]{sub 7} thin films were fabricated to test and verify the operation consumption and switching endurance. The scanning thermal microscopy was used to probe the nanoscale thermal property.

  5. Atmosphere Model

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    energy balance due to aerosol-radiation interactions, but the effect depends on the dust optical properties assumed in the simulations without mineralogy. More importantly, the...

  6. Theory, electro-optical design, testing, and calibration of a prototype atmospheric supersaturation, humidity, and temperature sensor. Final report Mar 81-Jul 82

    SciTech Connect (OSTI)

    Nelson, L.D.

    1982-07-15

    A new infrared differential absorption - passive thermal emission based instrument designed to make accurate in-cloud measurements of absolute humidity, air temperature, relative humidity, and ice and water supersaturations has been developed. Absolute humidity is measured by the differential infrared absorption of a broad-band light beam between 2.45 microns wavelength and the strongly absorbing water vapor band at 2.67 microns. Air temperature is sensed by a passive radiometric measurement of the Planck's law radiance emitted by carbon dioxide molecules in their very intense emission band at 4.25 microns. Significant operational advantages over previous 14-16 micron band radiometers are achieved. These non-contact optical measurements of absolute humidity and true air temperature can then be combined to yield relative humidity values with respect to both water and ice which remain valid in condensing supersaturated conditions and in spite of hydrometeors in the sample volume.

  7. Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices

    SciTech Connect (OSTI)

    Olson, Benjamin Varberg; Haugan, Heather J.; Brown, Gail J.; Kadlec, Emil Andrew; Kim, Jin K.; Shaner, Eric A.

    2016-01-01

    Here, significantly improved carrier lifetimes in very-long wave infrared InAs/GaInSb superlattice(SL) absorbers are demonstrated by using time-resolved microwave reflectance (TMR) measurements. A nominal 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb SLstructure that produces an approximately 25 μm response at 10 K has a minority carrier lifetime of 140 ± 20 ns at 18 K, which is markedly long for SL absorber with such a narrow bandgap. This improvement is attributed to the strain-engineered ternary design. Such SL employs a shorter period with reduced gallium in order to achieve good optical absorption and epitaxial advantages, which ultimately leads to the improvements in the minority carrier lifetime by reducing Shockley–Read–Hall (SRH) defects. By analyzing the temperature-dependence of TMR decay data, the recombination mechanisms and trap states that currently limit the performance of this SL absorber have been identified. The results show a general decrease in the long-decay lifetime component, which is dominated by the SRH recombination at temperature below ~30 K, and by Auger recombination at temperatures above ~45 K.

  8. Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Olson, Benjamin Varberg; Haugan, Heather J.; Brown, Gail J.; Kadlec, Emil Andrew; Kim, Jin K.; Shaner, Eric A.

    2016-01-01

    Here, significantly improved carrier lifetimes in very-long wave infrared InAs/GaInSb superlattice(SL) absorbers are demonstrated by using time-resolved microwave reflectance (TMR) measurements. A nominal 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb SLstructure that produces an approximately 25 μm response at 10 K has a minority carrier lifetime of 140 ± 20 ns at 18 K, which is markedly long for SL absorber with such a narrow bandgap. This improvement is attributed to the strain-engineered ternary design. Such SL employs a shorter period with reduced gallium in order to achieve good optical absorption and epitaxial advantages, which ultimately leads to the improvements in themore » minority carrier lifetime by reducing Shockley–Read–Hall (SRH) defects. By analyzing the temperature-dependence of TMR decay data, the recombination mechanisms and trap states that currently limit the performance of this SL absorber have been identified. The results show a general decrease in the long-decay lifetime component, which is dominated by the SRH recombination at temperature below ~30 K, and by Auger recombination at temperatures above ~45 K.« less

  9. The reaction mechanism of SnSb and Sb thin film anodes for Na-ion batteries studied by X-ray diffraction, 119Sn and 121Sb Mössbauer spectroscopies

    SciTech Connect (OSTI)

    Baggetto, Loïc; Hah, Hien-Yoong; Jumas, Jean-Claude; Johnson, Charles E.; Johnson, Jacqueline A.; Keum, Jong K.; Bridges, Craig A.; Veith, Gabriel M.

    2014-06-01

    The electrochemical reaction of Sb and SnSb anode materials with Na results in the formation of amorphous materials. To understand the resulting phases and electrochemical capacities we studied the reaction products local order using 119Sn and 121Sb Mössbauer spectroscopies in conjunction with measurements performed on model powder compounds of Na-Sn and Na-Sb to further clarify the reactions steps. For pure Sb the discharge (sodiation) starts with the formation of an amorphous phase composed of atomic environments similar to those found in NaSb, and proceeds further by the formation of environments similar to that present in Na3Sb. The reversible reaction takes place during a large portion of the charge process. At full charge the anode material still contains a substantial fraction of Na, which explains the lack of recrystallization into crystalline Sb. The reaction of SnSb yields Na3Sb crystalline phase at full discharge at higher temperatures (65 and 95°C) while the room temperature reaction yields amorphous compounds. The electrochemically-driven, solid-state amorphization reaction occurring at room temperature is governed by the simultaneous formation of Na-coordinated Sn and Sb environments, as monitored by the decrease (increase) of the 119Sn (121Sb) Mössbauer isomer shifts. Overall, the monitoring of the hyperfine parameters enables to correlate the changes in Na content to the individual Sn and Sb local chemical environments.

  10. TANK 40 FINAL SB6 CHEMICAL CHARACTERIZATION RESULTS

    SciTech Connect (OSTI)

    Bannochie, C.

    2010-08-13

    A sample of Sludge Batch 6 (SB6) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS), and a portion of the sample was designated for SB6 processing studies. The SB6 WAPS sample was also analyzed for chemical composition including noble metals and fissile composition, and these results are reported here. These analyses along with the WAPS radionuclide analyses will help define the composition of the sludge in Tank 40 that is currently being fed to DWPF as SB6. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB6 sample was transferred from the shipping container into a 4-L high density polyethylene vessel and solids were allowed to settle overnight. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 485 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples.

  11. Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy

    SciTech Connect (OSTI)

    Kim, T. W.; Mawst, L. J.; Kim, K.; Lee, J. J.; Kuech, T. F.; Wells, N. P.; LaLumondiere, S. D.; Sin, Y.; Lotshaw, W. T.; Moss, S. C.

    2014-02-03

    Two different thermal annealing techniques (rapid thermal annealing (RTA) and in-situ post-growth annealing in the metalorganic vapor phase epitaxy (MOVPE) chamber) were employed to investigate their impact on the optical characteristics of double-heterostructures (DH) of InGaAsSbN/GaAs and on the performance of single-junction solar cell structures, all grown by MOVPE. We find that an optimized RTA procedure leads to a similar improvement in the photoluminescence (PL) intensity compared with material employing a multi-step optimized anneal within the MOVPE reactor. Time-resolved photoluminescence techniques at low temperature (LT) and room temperature (RT) were performed to characterize the carrier dynamics in bulk InGaAsSbN layers. Room temperature carrier lifetimes were found to be similar for both annealing methods, although the LT-PL (16?K) measurements of the MOVPE-annealed sample found longer lifetimes than the RTA-annealed sample (680?ps vs. 260?ps) for the PL measurement energy of 1.24?eV. InGaAsSbN-based single junction solar cells processed with the optimized RTA procedure exhibited an enhancement of the electrical performance, such as improvements in open circuit voltage, short circuit current, fill factor, and efficiency over solar cells subjected to the in-situ MOVPE annealing technique.

  12. Chemical ordering rather than random alloying in SbAs (Journal...

    Office of Scientific and Technical Information (OSTI)

    Chemical ordering rather than random alloying in SbAs Title: Chemical ordering rather than random alloying in SbAs Authors: Shoemaker, Daniel P. ; Chasapis, Thomas C. ; Do, Dat ; ...

  13. A new n-type half-Heusler thermoelectric material NbCoSb (Journal...

    Office of Scientific and Technical Information (OSTI)

    A new n-type half-Heusler thermoelectric material NbCoSb Citation Details In-Document Search Title: A new n-type half-Heusler thermoelectric material NbCoSb Highlights: * ...

  14. Optical analyzer

    DOE Patents [OSTI]

    Hansen, Anthony D.

    1989-01-01

    An optical analyzer (10) wherein a sample (19) of particulate matter, and particularly of organic matter, which has been collected on a quartz fiber filter (20) is placed in a combustion tube (11), and light from a light source (14) is passed through the sample (19). The temperature of the sample (19) is raised at a controlled rate and in a controlled atmosphere. The magnitude of the transmission of light through the sample (19) is detected (18) as the temperature is raised. A data processor (23), differentiator (28) and a two pen recorder (24) provide a chart of the optical transmission versus temperature and the rate of change of optical transmission versus temperature signatures (T and D) of the sample (19). These signatures provide information as to physical and chemical processes and a variety of quantitative and qualitative information about the sample (19). Additional information is obtained by repeating the run in different atmospheres and/or different rates of heating with other samples of the same particulate material collected on other filters.

  15. SB Electronics Breaks Ground on New Factory | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    SB Electronics Breaks Ground on New Factory SB Electronics Breaks Ground on New Factory April 29, 2010 - 5:22pm Addthis U.S. Rep. Peter Welch (from left), Vermont Lt. Gov. Brian Dubie, SBE board member Win Hunter, SBE board chair Stan Fishkin, Assi U.S. Rep. Peter Welch (from left), Vermont Lt. Gov. Brian Dubie, SBE board member Win Hunter, SBE board chair Stan Fishkin, Assi Paul Lester Paul Lester Digital Content Specialist, Office of Public Affairs A Vermont company broke ground on a new

  16. Growth of Sb-Bi gradient single crystals

    SciTech Connect (OSTI)

    Kozhemyakin, G. N. Lutskiy, D. V.; Rom, M. A.; Mateychenko, P. V.

    2008-12-15

    The growth conditions and structural quality of Sb-Bi gradient single crystals with Bi content from 2 to 18 at %, grown by the Czochralski method with solid phase feed, are investigated. Bi distribution in the crystals along their pulling direction are studied by electron probe microanalysis and the change in the interplanar spacing is analyzed by double-crystal X-ray diffraction. It is established that the pulling rate and feed mass affect the Bi distribution in Sb-Bi single crystals.

  17. Ultrafast terahertz-induced response of GeSbTe phase-change materials

    SciTech Connect (OSTI)

    Shu, Michael J.; Zalden, Peter; Chen, Frank; Weems, Ben; Chatzakis, Ioannis; Xiong, Feng; Jeyasingh, Rakesh; Pop, Eric; Philip Wong, H.-S.; Hoffmann, Matthias C.; Wuttig, Matthias; Lindenberg, Aaron M.

    2014-06-23

    The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap transmission as a probe of the electronic and structural response below the switching threshold, we observe a field-induced heating of the carrier system and resolve the picosecond-time-scale energy relaxation processes and their dependence on the sample annealing condition in the crystalline phase. In the amorphous phase, an instantaneous electroabsorption response is observed, quadratic in the terahertz field, followed by field-driven lattice heating, with Ohmic behavior up to 200 kV/cm.

  18. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  19. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  20. Structural transformations in amorphous ↔ crystalline phase change of Ga-Sb alloys

    SciTech Connect (OSTI)

    Edwards, T. G.; Sen, S.; Hung, I.; Gan, Z.; Kalkan, B.; Raoux, S.

    2013-12-21

    Ga-Sb alloys with compositions ranging between ∼12 and 50 at. % Ga are promising materials for phase change random access memory applications. The short-range structures of two such alloys with compositions Ga{sub 14}Sb{sub 86} and Ga{sub 46}Sb{sub 54} are investigated, in their amorphous and crystalline states, using {sup 71}Ga and {sup 121}Sb nuclear magnetic resonance spectroscopy and synchrotron x-ray diffraction. The Ga and Sb atoms are fourfold coordinated in the as-deposited amorphous Ga{sub 46}Sb{sub 54} with nearly 40% of the constituent atoms being involved in Ga-Ga and Sb-Sb homopolar bonding. This necessitates extensive bond switching and elimination of homopolar bonds during crystallization. On the other hand, Ga and Sb atoms are all threefold coordinated in the as-deposited amorphous Ga{sub 14}Sb{sub 86}. Crystallization of this material involves phase separation of GaSb domains in Sb matrix and a concomitant increase in the Ga coordination number from 3 to 4. Results from crystallization kinetics experiments suggest that the melt-quenching results in the elimination of structural “defects” such as the homopolar bonds and threefold coordinated Ga atoms in the amorphous phases of these alloys, thereby rendering them structurally more similar to the corresponding crystalline states compared to the as-deposited amorphous phases.

  1. Enhanced thermoelectric performance driven by high-temperature phase transition in the phase change material Ge4SbTe5

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Williams, Jared B.; Lara-Curzio, Edgar; Cakmak, Ercan; Watkins, Thomas R.; Morelli, Donald T.

    2015-05-15

    Phase change materials are identified for their ability to rapidly alternate between amorphous and crystalline phases and have large contrast in the optical/electrical properties of the respective phases. The materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase change materials researched today can be found on the pseudo-binary (GeTe)1-x(Sb2Te3)x tie-line. While many compounds on this tie-line have been recognized as thermoelectric materials, here we focus on Ge4SbTe5, a single phase compound just off of the (GeTe)1-x(Sb2Te3)x tie-line, that forms in a stable rocksalt crystal structure atmore » room temperature. We find that stoichiometric and undoped Ge4SbTe5 exhibits a thermal conductivity of ~1.2 W/m-K at high temperature and a large Seebeck coefficient of ~250 μV/K. The resistivity decreases dramatically at 623 K due to a structural phase transition which lends to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. In a more general sense the research presents evidence that phase change materials can potentially provide a new route to highly efficient thermoelectric materials for power generation at high temperature.« less

  2. Two new ternary lanthanide antimony chalcogenides: Yb{sub 4}Sb{sub 2}S{sub 11.25} and Tm{sub 4}Sb{sub 2}Se{sub 11.68} containing chalcogenide Q{sup 2-} and dichalcogenide (Q{sub 2}){sup 2-} anions

    SciTech Connect (OSTI)

    Babo, Jean-Marie; Albrecht-Schmitt, Thomas E.

    2012-03-15

    Dark red and dark brown crystals of Yb{sub 4}Sb{sub 2}S{sub 11.25} and Tm{sub 8}Sb{sub 4}Se{sub 11.68}, respectively, were obtained from the reaction of the elements in Sb{sub 2}Q{sub 3} (Q=S, Se) fluxes. Both non-stoichiometric compounds are orthorhombic and crystallize in the same space group Pnnm, with two formula units per unit cell (a=12.446(2), b=5.341(1), c=12.058(2) for sulfide and a=13.126(2), b=5.623(1), c=12.499(2) for the selenide). Their crystal structures are dominated by lanthanide-chalcogenide polyhedra (CN=7 and 8), which share corners, edges, triangular- and square-faces to form a three-dimensional framework embedding antinomy cations. The latter are coordinated by three sulfide anions with 5(1+2+2) secondary contacts forming basically infinite chains running along [0 1 0]. The chalcogens in both compounds form chalcogenide Q{sup 2-} and dichalcogenide (Q{sub 2}){sup 2-} anionic units. The optical analysis made on those compounds shows that both are semiconductors with band gap of 1.71 and 1.22 eV for Yb{sub 4}Sb{sub 2}S{sub 11.25} and Tm{sub 4}Sb{sub 2}Se{sub 11.75,} respectively. - Graphical Abstract: The crystal structure of Yb{sub 4}Sb{sub 2}S{sub 11} viewed along the [0 1 0]. Highlights: Black-Right-Pointing-Pointer Lanthanide chalcogenides. Black-Right-Pointing-Pointer Semiconductors. Black-Right-Pointing-Pointer Tunnel structures. Black-Right-Pointing-Pointer Lone-pair effects.

  3. Optical Study of Interactions in a d-Electron Kondo Lattice with Ferromagnetism

    SciTech Connect (OSTI)

    Burch, K. S.; Schafgans, A.; Butch, N. P.; Sayles, T. A.; Maple, M. B.; Sales, Brian C; Mandrus, David; Basov, D. N.

    2005-01-01

    We report on a comprehensive optical, transport, and thermodynamic study of the Zintl compound Yb{sub 14}MnSb{sub 11}, demonstrating that it is the first ferromagnetic Kondo lattice compound in the underscreened limit. We propose a scenario whereby the combination of Kondo and Jahn-Teller effects provides a consistent explanation of both transport and optical data.

  4. Thermochemical and kinetic aspects of the sulfurization of Cu-Sb and Cu-Bi thin films

    SciTech Connect (OSTI)

    Colombara, Diego; Peter, Laurence M.; Rogers, Keith D.; Hutchings, Kyle

    2012-02-15

    CuSbS{sub 2} and Cu{sub 3}BiS{sub 3} are being investigated as part of a search for new absorber materials for photovoltaic devices. Thin films of these chalcogenides were produced by conversion of stacked and co-electroplated metal precursor layers in the presence of elemental sulfur vapour. Ex-situ XRD and SEM/EDS analyses of the processed samples were employed to study the reaction sequence with the aim of achieving compact layer morphologies. A new 'Time-Temperature-Reaction' (TTR) diagram and modified Pilling-Bedworth coefficients have been introduced for the description and interpretation of the reaction kinetics. For equal processing times, the minimum temperature required for CuSbS{sub 2} to appear is substantially lower than for Cu{sub 3}BiS{sub 3}, suggesting that interdiffusion across the interfaces between the binary sulfides is a key step in the formation of the ternary compounds. The effects of the heating rate and sulfur partial pressure on the phase evolution as well as the potential losses of Sb and Bi during the processes have been investigated experimentally and the results related to the equilibrium pressure diagrams obtained via thermochemical computation. - Graphical Abstract: Example of 3D plot showing the equilibrium pressure surfaces of species potentially escaping from chalcogenide films as a function of temperature and sulfur partial pressure. Bi{sub (g)}, Bi{sub 2(g)}, and BiS{sub (g)} are the gaseous species in equilibrium with solid Bi{sub 2}S{sub 3(s)} considered in this specific example. The pressure threshold plane corresponds to the pressure limit above which the elemental losses from 1 {mu}m thick films exceeds 10% of the original content per cm{sup 2} area of film and dm{sup 3} capacity of sulfurization furnace under static atmosphere conditions. The sulfurization temperature/sulfur partial pressure boundaries required to minimise the elemental losses below a given value can be easily read from the 2D projection of the

  5. TANK 40 FINAL SB7B CHEMICAL CHARACTERIZATION RESULTS

    SciTech Connect (OSTI)

    Bannochie, C.

    2012-03-15

    A sample of Sludge Batch 7b (SB7b) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). The SB7b WAPS sample was also analyzed for chemical composition including noble metals and fissile constituents, and these results are reported here. These analyses along with the WAPS radionuclide analyses will help define the composition of the sludge in Tank 40 that is currently being fed to the Defense Waste Processing Facility (DWPF) as SB7b. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB7b sample was transferred from the shipping container into a 4-L high density polyethylene bottle and solids were allowed to settle over the weekend. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 558 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon{reg_sign} vessels and four with NaOH/Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Two Analytical Reference Glass - 1 (ARG-1) standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma - atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma - mass spectrometry (ICP-MS) analysis, atomic absorption spectroscopy (AA) for As and Se, and cold vapor atomic absorption spectroscopy (CV-AA) for Hg. Equivalent dilutions of the alkali fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB7b supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES, ion chromatography (IC), total base

  6. Magnetic properties of MnSb inclusions formed in GaSb matrix directly during molecular beam epitaxial growth

    SciTech Connect (OSTI)

    Lawniczak-Jablonska, Krystyna; Wolska, Anna; Klepka, Marcin T.; Kret, Slawomir; Kurowska, Boguslawa; Kowalski, Bogdan J.; Twardowski, Andrzej; Wasik, Dariusz; Kwiatkowski, Adam; Sadowski, Janusz

    2011-04-01

    Despite of intensive search for the proper semiconductor base materials for spintronic devices working at room temperature no appropriate material based on ferromagnetic semiconductors has been found so far. We demonstrate that the phase segregated system with MnSb hexagonal inclusions inside the GaSb matrix, formed directly during the molecular beam epitaxial growth reveals the ferromagnetic properties at room temperature and is a good candidate for exploitation in spintronics. Furthermore, the MnSb inclusions with only one crystalline structure were identified in this GaMn:MnSb granular material. The SQUID magnetometry confirmed that this material exhibits ferromagnetic like behavior starting from helium up to room temperature. Moreover, the magnetic anisotropy was found which was present also at room temperature, and it was proved that by choosing a proper substrate it is possible to control the direction of easy axis of inclusions' magnetization moment between in-plane and out-of-plane; the latter is important in view of potential applications in spintronic devices.

  7. Influence of substituting Sn for Sb on the thermoelectric transport properties of CoSb{sub 3}-based skutterudites

    SciTech Connect (OSTI)

    Hui, Si; Nielsen, Michele D.; Homer, Mark R.; Medlin, Douglas L.; Tobola, Janusz; Salvador, James R.; Heremans, Joseph P.; Pipe, Kevin P.; Uher, Ctirad

    2014-03-14

    Band structure calculations that incorporate impurity effects suggest that a band resonant state may be formed in p-type CoSb{sub 3}-based skutterudites by replacing Sb atoms with Sn dopant atoms. Such resonant states have the potential to greatly improve thermoelectric energy conversion efficiency by increasing the density of states variation near the Fermi level, thereby increasing the Seebeck coefficient at a given carrier concentration. Through transport measurements of the Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient, we show that a practical band resonant state is not achieved by Sn doping. Compared to undoped CoSb{sub 3}, the dimensionless figure of merit (ZT) in Sn-doped CoSb{sub 3} is enhanced slightly at high temperatures to a value of 0.2, mostly due to a reduction in thermal conductivity. The Fermi level is calculated not to reach the band resonant state induced by Sn impurity atoms within the range of Sn concentrations examined here.

  8. Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires

    SciTech Connect (OSTI)

    Liao, Gaohua; Luo, Ning; Yang, Zhihu; Chen, Keqiu; Xu, H. Q. E-mail: hongqi.xu@ftf.lth.se

    2015-09-07

    We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions. The nanowires are described by atomistic, tight-binding models, including spin-orbit interaction. The band structures and the wave functions of the nanowires are calculated by means of a Lanczos iteration algorithm. For the [001]-oriented InSb and GaSb nanowires, the systems with both square and rectangular cross sections are considered. Here, it is found that all the energy bands are doubly degenerate. Although the lowest conduction bands in these nanowires show good parabolic dispersions, the top valence bands show rich and complex structures. In particular, the topmost valence bands of the nanowires with a square cross section show a double maximum structure. In the nanowires with a rectangular cross section, this double maximum structure is suppressed, and the top valence bands gradually develop into parabolic bands as the aspect ratio of the cross section is increased. For the [111]-oriented InSb and GaSb nanowires, the systems with hexagonal cross sections are considered. It is found that all the bands at the Γ-point are again doubly degenerate. However, some of them will split into non-degenerate bands when the wave vector moves away from the Γ-point. Although the lowest conduction bands again show good parabolic dispersions, the topmost valence bands do not show the double maximum structure. Instead, they show a single maximum structure with its maximum at a wave vector slightly away from the Γ-point. The wave functions of the band states near the band gaps of the [001]- and [111]-oriented InSb and GaSb nanowires are also calculated and are presented in terms of probability distributions in the cross sections. It is found that although the probability distributions of the band states in the [001]-oriented nanowires with a rectangular cross section could be qualitatively described by one-band effective

  9. Precision Determination of Atmospheric Extinction at Optical...

    Office of Scientific and Technical Information (OSTI)

    This paper describes a technique to implement a new strategy to directly measure ... This strategy makes use of measurements of the spectra of a small catalog of bright ...

  10. Precision Determination of Atmospheric Extinction at Optical...

    Office of Scientific and Technical Information (OSTI)

    ; Saha, Abhijit ; NOAO, Tucson ; Smith, Allyn ; Austin Peay State U. ; Smith, R.Chris ; Cerro-Tololo InterAmerican Obs. ; Stubbs, Christopher W. ; Harvard-Smithsonian Ctr. ...

  11. ARM - Measurement - Aerosol optical depth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sky-Scanning, Sun Tracking Atmospheric Research SAM : Sun and Aureole Measurement UAV-GNAT : UAV-General Atomics GNAT Value-Added Products AOD : Aerosol Optical Depth, derived from ...

  12. GaSb substrates with extended IR wavelength for advanced space based applications

    SciTech Connect (OSTI)

    Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

    2009-05-01

    GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

  13. Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Subedi, Alaska; Siegrist, Theo; Singh, David J.; Mukhopadhyay, Saikat; Sun, Jifeng

    2016-05-19

    Ge2Sb2Te5 and related phase change materials are highly unusual in that they can be readily transformed between amorphous and crystalline states using very fast melt, quench, anneal cycles, although the resulting states are extremely long lived at ambient temperature. These states have remarkably different physical properties including very different optical constants in the visible in strong contrast to common glass formers such as silicates or phosphates. This behavior has been described in terms of resonant bonding, but puzzles remain, particularly regarding different physical properties of crystalline and amorphous phases. Here we show that there is a strong competition between ionicmore » and covalent bonding in cubic phase providing a link between the chemical basis of phase change memory property and origins of giant responses of piezoelectric materials (PbTiO3, BiFeO3). This has important consequences for dynamical behavior in particular leading to a simultaneous hardening of acoustic modes and softening of high frequency optic modes in crystalline phase relative to amorphous. As a result, this different bonding in amorphous and crystalline phases provides a direct explanation for different physical properties and understanding of the combination of long time stability and rapid switching and may be useful in finding new phase change compositions with superior properties.« less

  14. Light extinction in the atmosphere

    SciTech Connect (OSTI)

    Laulainen, N.

    1992-06-01

    Atmospheric aerosol particles originating from natural sources, such as volcanos and sulfur-bearing gas emissions from the oceans, and from human sources, such as sulfur emissions from fossil fuel combustion and biomass burning, strongly affect visual air quality and are suspected to significantly affect radiative climate forcing of the planet. During the daytime, aerosols obscure scenic vistas, while at night they diminish our ability to observe stellar objects. Scattering of light is the main means by which aerosols attenuate and redistribute light in the atmosphere and by which aerosols can alter and reduce visibility and potentially modify the energy balance of the planet. Trends and seasonal variability of atmospheric aerosol loading, such as column-integrated light extinction or optical depth, and how they may affect potential climate change have been difficult to quantify because there have been few observations made of important aerosol optical parameters, such as optical depth, over the globe and over time and often these are of uneven quality. To address questions related to possible climate change, there is a pressing need to acquire more high-quality aerosol optical depth data. Extensive deployment of improved solar radiometers over the next few years will provide higher-quality extinction data over a wider variety of locations worldwide. An often overlooked source of turbidity data, however, is available from astronomical observations, particularly stellar photoelectric photometry observations. With the exception of the Project ASTRA articles published almost 20 years ago, few of these data ever appear in the published literature. This paper will review the current status of atmospheric extinction observations, as highlighted by the ASTRA work and augmented by more recent solar radiometry measurements.

  15. Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

    SciTech Connect (OSTI)

    Craig, A. P.; Percy, B.; Marshall, A. R. J.; Jain, M.; Wicks, G.; Hossain, K.; Golding, T.; McEwan, K.; Howle, C.

    2015-05-18

    Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In{sub 0.28}Ga{sub 0.72}As{sub 0.25}Sb{sub 0.75} allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×10{sup 10} Jones and 1×10{sup 10} Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

  16. GaInP semiconductor compounds doped with the Sb isovalent impurity

    SciTech Connect (OSTI)

    Skachkov, A. F.

    2015-05-15

    GaInP{sub 1−x}Sb{sub x} layers containing different Sb fractions are produced by metal-organic vaporphase epitaxy on GaAs and Ge substrates. The charge-carrier mobilities in the GaInP{sub 1−x}Sb{sub x} layers are measured at room temperature and 77 K. The room-temperature charge-carrier mobilities in the GaInP{sub 1−x}Sb{sub x} layers additionally doped with donor and acceptor impurities are measured. The photoluminescence peaks of GaInP{sub 1−x}Sb{sub x} are detected. The influence of the Sb impurity on the band gap and charge-carrier mobility in GaInP is determined.

  17. Ab initio study of structural, electronic, magnetic alloys: XTiSb (X = Co, Ni and Fe)

    SciTech Connect (OSTI)

    Ibrir, M. Berri, S.; Lakel, S.; Alleg, S.; Bensalem, R.

    2015-03-30

    Structural, electronic and magnetic properties of three semi-Heusler compounds of CoTiSb, NiTiSb and FeTiSb were calculated by the method (FP-LAPW) which is based on the DFT code WIEN2k. We used the generalized gradient approximation (GGA (06)) for the term of the potential exchange and correlation (XC) to calculate structural properties, electronic properties and magnetic properties. Structural properties obtained as the lattice parameter are in good agreement with the experimental results available for the electronic and magnetic properties was that: CoTiSb is a semiconductor NiTiSb is a metal and FeTiSb is a half-metal ferromagnetic.

  18. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    SciTech Connect (OSTI)

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman; Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H.; Loubychev, Dmitri; Liu, Amy; Fastenau, Joel; Lindemuth, Jeff

    2014-08-04

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5 lower effective mass for s-InSb compared to s-Ge quantum well at 1.9??10{sup 12}?cm{sup 2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  19. Atmospheric Emitted Radiance Interferometer

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Gero, Jonathan; Ermold, Brian; Gaustad, Krista; Koontz, Annette; Hackel, Denny; Garcia, Raymond

    2005-01-01

    The atmospheric emitted radiance interferometer (AERI) is a ground-based instrument that measures the downwelling infrared radiance from the Earth’s atmosphere. The observations have broad spectral content and sufficient spectral resolution to discriminate among gaseous emitters (e.g., carbon dioxide and water vapor) and suspended matter (e.g., aerosols, water droplets, and ice crystals). These upward-looking surface observations can be used to obtain vertical profiles of tropospheric temperature and water vapor, as well as measurements of trace gases (e.g., ozone, carbon monoxide, and methane) and downwelling infrared spectral signatures of clouds and aerosols. The AERI is a passive remote sounding instrument, employing a Fourier transform spectrometer operating in the spectral range 3.3–19.2 μm (520–3020 cm-1) at an unapodized resolution of 0.5 cm-1 (max optical path difference of 1 cm). The extended-range AERI (ER-AERI) deployed in dry climates, like in Alaska, have a spectral range of 3.3–25.0 μm (400–3020 cm-1) that allow measurements in the far-infrared region. Typically, the AERI averages views of the sky over a 16-second interval and operates continuously.

  20. Limits of carrier mobility in Sb-doped SnO{sub 2} conducting films deposited by reactive sputtering

    SciTech Connect (OSTI)

    Bissig, B. Jäger, T.; Tiwari, A. N.; Romanyuk, Y. E.; Ding, L.

    2015-06-01

    Electron transport in Sb-doped SnO{sub 2} (ATO) films is studied to unveil the limited carrier mobility observed in sputtered films as compared to other deposition methods. Transparent and conductive ATO layers are deposited from metallic tin targets alloyed with antimony in oxygen atmosphere optimized for reactive sputtering. The carrier mobility decreases from 24 cm{sup 2} V{sup −1} s{sup −1} to 6 cm{sup 2} V{sup −1} s{sup −1} when increasing the doping level from 0 to 7 at. %, and the lowest resistivity of 1.8 × 10{sup −3} Ω cm corresponding to the mobility of 12 cm{sup 2} V{sup −1} s{sup −1} which is obtained for the 3 at. % Sb-doped ATO. Temperature-dependent Hall effect measurements and near-infrared reflectance measurements reveal that the carrier mobility in sputtered ATO is limited by ingrain scattering. In contrast, the mobility of unintentionally doped SnO{sub 2} films is determined mostly by the grain boundary scattering. Both limitations should arise from the sputtering process itself, which suffers from the high-energy-ion bombardment and yields polycrystalline films with small grain size.

  1. Method of making AlInSb by metal-organic chemical vapor deposition

    DOE Patents [OSTI]

    Biefeld, Robert M. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Baucom, Kevin C. (Albuquerque, NM)

    2000-01-01

    A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al.sub.X In.sub.1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525.degree. C. to produce Al.sub.x In.sub.1-x Sb crystalline materials wherein x is greater than 0.002 and less than one.

  2. Chemical ordering rather than random alloying in SbAs (Journal...

    Office of Scientific and Technical Information (OSTI)

    Title: Chemical ordering rather than random alloying in SbAs Authors: Shoemaker, Daniel P. ; Chasapis, Thomas C. ; Do, Dat ; Francisco, Melanie C. ; Chung, Duck Young ; Mahanti, S. ...

  3. Enhanced radiation resistant fiber optics

    DOE Patents [OSTI]

    Lyons, Peter B.; Looney, Larry D.

    1993-01-01

    A process for producing an optical fiber having enhanced radiation resitance is provided, the process including maintaining an optical fiber within a hydrogen-containing atmosphere for sufficient time to yield a hydrogen-permeated optical fiber having an elevated internal hydrogen concentration, and irradiating the hydrogen-permeated optical fiber at a time while the optical fiber has an elevated internal hydrogen concentration with a source of ionizing radiation. The radiation source is typically a cobalt-60 source and the fiber is pre-irradiated with a dose level up to about 1000 kilorads of radiation.

  4. Enhanced radiation resistant fiber optics

    DOE Patents [OSTI]

    Lyons, P.B.; Looney, L.D.

    1993-11-30

    A process for producing an optical fiber having enhanced radiation resistance is provided, the process including maintaining an optical fiber within a hydrogen-containing atmosphere for sufficient time to yield a hydrogen-permeated optical fiber having an elevated internal hydrogen concentration, and irradiating the hydrogen-permeated optical fiber at a time while the optical fiber has an elevated internal hydrogen concentration with a source of ionizing radiation. The radiation source is typically a cobalt-60 source and the fiber is pre-irradiated with a dose level up to about 1000 kilorads of radiation. 4 figures.

  5. Electron-phonon coupling and thermal transport in the thermoelectric compound Mo3Sb7–xTex

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bansal, Dipanshu; Li, Chen W.; Said, Ayman H.; Abernathy, Douglas L.; Yan, Jiaqiang; Delaire, Olivier A.

    2015-12-07

    Phonon properties of Mo3Sb7–xTex (x = 0, 1.5, 1.7), a potential high-temperature thermoelectric material, have been studied with inelastic neutron and x-ray scattering, and with first-principles simulations. The substitution of Te for Sb leads to pronounced changes in the electronic struc- ture, local bonding, phonon density of states (DOS), dispersions, and phonon lifetimes. Alloying with tellurium shifts the Fermi level upward, near the top of the valence band, resulting in a strong suppression of electron-phonon screening, and a large overall stiffening of interatomic force- constants. The suppression in electron-phonon coupling concomitantly increases group velocities and suppresses phonon scattering rates, surpassingmore » the effects of alloy-disorder scattering, and re- sulting in a surprising increased lattice thermal conductivity in the alloy. We also identify that the local bonding environment changes non-uniformly around different atoms, leading to variable perturbation strengths for different optical phonon branches. The respective roles of changes in phonon group velocities and phonon lifetimes on the lattice thermal conductivity are quantified. Lastly, our results highlight the importance of the electron-phonon coupling on phonon mean-free-paths in this compound, and also estimates the contributions from boundary scattering, umklapp scattering, and point-defect scattering.« less

  6. The reaction mechanism of FeSb2 as anode for sodium-ion batteries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Baggetto, Loic; Hah, Hien-Yoong; Charles E. Johnson; Bridges, Craig A.; Johnson, Jackie A.; Veith, Gabriel M.

    2014-04-04

    The electrochemical reaction of FeSb2 with Na is reported for the first time. The first discharge (sodiation) potential profile of FeSb2 is characterized by a gentle slope centered at 0.25 V. During charge (Na removal) and the subsequent discharge, the main reaction takes place near 0.7 V and 0.4 V, respectively. The reversible storage capacity amounts to 360 mA h g-1, which is smaller than the theoretical value of 537 mA h g-1. The reaction, studied by ex situ and in situ X-ray diffraction, is found to proceed by the consumption of crystalline FeSb2 to form an amorphous phase. Uponmore » further sodiation, the formation of nanocrystalline Na3Sb domains is evidenced. During desodiation, Na3Sb domains convert into an amorphous phase. The chemical environment of Fe, probed by 57Fe Mo ssbauer spectroscopy, undergoes significant changes during the reaction. During sodiation, the well-resolved doublet of FeSb2 with an isomer shift around 0.45 mm s-1 and a quadrupole splitting of 1.26 mm s-1 is gradually converted into a doublet line centered at about 0.15 mm s1 along with a singlet line around 0 mm s-1. The former signal results from the formation of a Fe-rich FexSb alloy with an estimated composition of Fe4Sb while the latter signal corresponds to superparamagnetic Fe due to the formation of nanosized pure Fe domains. Interestingly the signal of Fe4Sb remains unaltered during desodiation. This mechanism is substantially different than that observed during the reaction with Li. The irreversible formation of a Fe-rich Fe4Sb alloy and the absence of full desodiation of Sb domains explain the lower than theoretical practical storage capacity.« less

  7. Probing the Mechanism of Sodium Ion Insertion into Copper Antimony Cu2 Sb Anodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Baggetto, Loïc; Carroll, Kyler J.; Hah, Hien-Yoong; Johnson, Charles E.; Mullins, David R.; Unocic, Raymond R.; Johnson, Jacqueline A.; Meng, Ying Shirley; Veith, Gabriel M.

    2014-03-25

    Cycling Cu2Sb films with fluoroethylene carbonate additive drastically improves the capacity retention of the electrode compared to cycling in pure PC with about 250 mAh g-1 retained capacity for about two hundred cycles. TEM photographs reveal that the pristine films are formed of nanoparticles of 5-20 nm diameters. XRD results highlight that during the first discharge the reaction leads to the formation of Na3Sb via an intermediate amorphous phase. During charge, Na3Sb crystallites convert into an amorphous phase, which eventually crystallizes into Cu2Sb at full charge, indicating a high degree of structural reversibility. The subsequent discharge is marked by amore » new plateau around 0.5 V at low Na/Sb content which does not correspond to the formation of a crystalline phase. XAS data show that the fully discharged electrode material has interatomic distances matching those expected for the coexistence of Cu and Na3Sb nanodomains. At 1 V charge, the structure somewhat differs from that of Cu2Sb whereas at 2 V charge, when all Na is removed, the structure is significantly closer to that of the starting material. 121Sb Mössbauer spectroscopy isomer shifts of Cu2Sb powder (-9.67 mm s-1) and thin films (-9.65 mm s-1) are reported for the first time, and agree with the value predicted theoretically. At full discharge, an isomer shift (-8.10 mm s-1) rather close to that of a Na3Sb reference powder (-8.00 mm s-1) is measured, in agreement with the formation of Na3Sb domains evidenced by XRD and XAS data. The isomer shift at 1 V charge (-9.29 mm s-1) is close to that of the pristine material and the higher value is in agreement with the lack of full desodiation at 1 V.« less

  8. Probing the mechanism of sodium ion insertion into copper antimony Cu2Sb anodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Baggetto, Loic; Carroll, Kyler J.; Hah, Hien -Yoong; Johnson, Charles E.; Mullins, David R.; Unocic, Raymond R.; Johnson, Jacqueline A.; Meng, Ying Shirley; Veith, Gabriel M.

    2014-03-25

    Cycling Cu2Sb films with fluoroethylene carbonate additive drastically improves the capacity retention of the electrode compared to cycling in pure PC with about 250 mAh g-1 retained capacity for about two hundred cycles. TEM photographs reveal that the pristine films are formed of nanoparticles of 5-20 nm diameters. XRD results highlight that during the first discharge the reaction leads to the formation of Na3Sb via an intermediate amorphous phase. During charge, Na3Sb crystallites convert into an amorphous phase, which eventually crystallizes into Cu2Sb at full charge, indicating a high degree of structural reversibility. The subsequent discharge is marked by amore » new plateau around 0.5 V at low Na/Sb content which does not correspond to the formation of a crystalline phase. XAS data show that the fully discharged electrode material has interatomic distances matching those expected for the coexistence of Cu and Na3Sb nanodomains. At 1 V charge, the structure somewhat differs from that of Cu2Sb whereas at 2 V charge, when all Na is removed, the structure is significantly closer to that of the starting material. 121Sb Mössbauer spectroscopy isomer shifts of Cu2Sb powder (-9.67 mm s-1) and thin films (-9.65 mm s-1) are reported for the first time, and agree with the value predicted theoretically. At full discharge, an isomer shift (-8.10 mm s-1) rather close to that of a Na3Sb reference powder (-8.00 mm s-1) is measured, in agreement with the formation of Na3Sb domains evidenced by XRD and XAS data. As a result, the isomer shift at 1 V charge (-9.29 mm s-1) is close to that of the pristine material and the higher value is in agreement with the lack of full desodiation at 1 V.« less

  9. Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs/In(As,Sb) Type-II Superlattices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aytac, Y.; Olson, B. V.; Kim, J. K.; Shaner, E. A.; Hawkins, S. D.; Klem, J. F.; Flatté, M. E.; Boggess, T. F.

    2016-05-24

    A set of seven InAs/InAsSb type-II superlattices (T2SLs) were designed to have speci c bandgap energies between 290 meV (4.3 m) and 135 meV (9.2 m) in order to study the e ects of the T2SL bandgap energy on the minority carrier lifetime. A temperature dependent optical pump-probe technique is used to measure the carrier lifetimes, and the e ect of a mid-gap defect level on the carrier recombination dynamics is reported. The Shockley-Read-Hall (SRH) defect state is found to be at energy of approximately -250 12 meV relative to the valence band edge of bulk GaSb for the entiremore » set of T2SL structures, even though the T2SL valence band edge shifts by 155 meV on the same scale. These results indicate that the SRH defect state in InAs/InAsSb T2SLs is singular and is nearly independent of the exact position of the T2SL bandgap or band edge energies. They also suggest the possibility of engineering the T2SL structure such that the SRH state is removed completely from the bandgap, a result that should signi cantly increase the minority carrier lifetime.« less

  10. Tank 40 Final SB7b Chemical Characterization Results

    SciTech Connect (OSTI)

    Bannochie, C. J.

    2012-11-06

    A sample of Sludge Batch 7b (SB7b) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). The SB7b WAPS sample was also analyzed for chemical composition including noble metals and fissile constituents. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB7b sample was transferred from the shipping container into a 4-L high density polyethylene bottle and solids were allowed to settle over the weekend. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 558 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon? vessels and four with NaOH/Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Two Analytical Reference Glass ? 1 (ARG-1) standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma ? atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma ? mass spectrometry (ICP-MS) analysis, atomic absorption spectroscopy (AA) for As and Se, and cold vapor atomic absorption spectroscopy (CV-AA) for Hg. Equivalent dilutions of the alkali fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB7b supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES, ion chromatography (IC), total base/free OH{sup -}/other base, total inorganic carbon/total organic carbon (TIC/TOC) analyses, and Cs-137 gamma scan. Weighted dilutions of slurry were submitted for IC, TIC/TOC, and total base/free OH-/other base analyses. Activities for U-233, U-235

  11. Spintronic properties of Li1.5Mn0.5Z (Z=As, Sb) compounds in...

    Office of Scientific and Technical Information (OSTI)

    Publisher's Accepted Manuscript: Spintronic properties of Li1.5Mn0.5Z (ZAs, Sb) compounds in the Cu2Sb structure This content will become publicly available on January 26, 2017 ...

  12. Facile synthesis of one-dimensional peapod-like Sb@C submicron-structures

    SciTech Connect (OSTI)

    Luo, W; Lorger, S; Wang, B; Bommier, C; Ji, XL

    2014-01-01

    We demonstrate a novel synthetic route to fabricate a one-dimensional peapod-like Sb@C structure with disperse Sb submicron-particles encapsulated in carbon submicron-tubes. The synthetic route may well serve as a general methodology for fabricating carbon/metallic fine structures by thermally reducing their carbon-coated metal oxide composites.

  13. In-situ crystallization of GeTe\\GaSb phase change memory stacked films

    SciTech Connect (OSTI)

    Velea, A.; Borca, C. N.; Grolimund, D.; Socol, G.; Galca, A. C.; Popescu, M.; Bokhoven, J. A. van

    2014-12-21

    Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C, the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.

  14. Interface Reactions and Electrical Characteristics of Au/GaSb Contacts

    SciTech Connect (OSTI)

    H. Ehsani; R.J. Gutmann; G.W. Charache

    2000-07-07

    The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{sub 2} compound and several Au-Ga phases are produced. Phase transitions occur toward higher Ga concentration with increasing annealing temperatures. Furthermore, the depth of the contact also increases with increased annealing temperature. They found that the AuSb{sub 2} compound forms on the GaSb surface, with the compound crystal partially ordered with respect to the substrate. The transition of Schottky- to ohmic-contact behavior in Au/n-type GaSb occurs simultaneously with the formation of the AuGa compound at about a 250 C annealing temperature. This ohmic contact forms without the segregation of dopants at the metallic compound/GaSb interface. Therefore it is postulated that transition from Schottky- to ohmic-contact behavior is obtained through a series of tunneling transitions of electrons through defects in the depletion region in the Au/n-type GaSb contacts. Contact resistivities of 6-7 x 10{sup -6} {Omega}-cm{sup 2} were obtained with the annealing temperature between 300 and 350 C for 30 seconds. In Au/p-type GaSb contacts, the resistivity was independent of the annealing temperature. This suggested that the carrier transport in p-type contact dominated by thermionic emission.

  15. Enhanced thermoelectric performance driven by high-temperature phase transition in the phase change material Ge4SbTe5

    SciTech Connect (OSTI)

    Williams, Jared B.; Lara-Curzio, Edgar; Cakmak, Ercan; Watkins, Thomas R.; Morelli, Donald T.

    2015-05-15

    Phase change materials are identified for their ability to rapidly alternate between amorphous and crystalline phases and have large contrast in the optical/electrical properties of the respective phases. The materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase change materials researched today can be found on the pseudo-binary (GeTe)1-x(Sb2Te3)x tie-line. While many compounds on this tie-line have been recognized as thermoelectric materials, here we focus on Ge4SbTe5, a single phase compound just off of the (GeTe)1-x(Sb2Te3)x tie-line, that forms in a stable rocksalt crystal structure at room temperature. We find that stoichiometric and undoped Ge4SbTe5 exhibits a thermal conductivity of ~1.2 W/m-K at high temperature and a large Seebeck coefficient of ~250 μV/K. The resistivity decreases dramatically at 623 K due to a structural phase transition which lends to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. In a more general sense the research presents evidence that phase change materials can potentially provide a new route to highly efficient thermoelectric materials for power generation at high temperature.

  16. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

    SciTech Connect (OSTI)

    Zuo, Daniel; Liu, Runyu; Wasserman, Daniel; Mabon, James; He, Zhao -Yu; Liu, Shi; Zhang, Yong -Hang; Kadlec, Emil A.; Olson, Benjamin V.; Shaner, Eric A.

    2015-02-18

    We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 202 ns, with a vertical diffusivity of 2.78 x 10–2 cm2/s. We also report on the device's optical response characteristics at 78 K.

  17. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

    SciTech Connect (OSTI)

    Zuo, Daniel Liu, Runyu; Wasserman, Daniel; Mabon, James; He, Zhao-Yu; Liu, Shi; Zhang, Yong-Hang; Kadlec, Emil A.; Olson, Benjamin V.; Shaner, Eric A.

    2015-02-16

    We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures, we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 200 ns, with a vertical diffusivity of 3 × 10{sup −2} cm{sup 2}/s. We also report on the device's optical response characteristics at 78 K.

  18. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zuo, Daniel; Liu, Runyu; Wasserman, Daniel; Mabon, James; He, Zhao -Yu; Liu, Shi; Zhang, Yong -Hang; Kadlec, Emil A.; Olson, Benjamin V.; Shaner, Eric A.

    2015-02-18

    We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 202 ns, with a vertical diffusivity of 2.78 x 10–2 cm2/s. Wemore » also report on the device's optical response characteristics at 78 K.« less

  19. Ab initio calculation of the thermodynamic properties of InSb under intense laser irradiation

    SciTech Connect (OSTI)

    Feng, ShiQuan; Cheng, XinLu; Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu, 610064 ; Zhao, JianLing; Zhang, Hong

    2013-07-28

    In this paper, phonon spectra of InSb at different electronic temperatures are presented. Based on the phonon dispersion relationship, we further perform a theoretical investigation of the thermodynamic properties of InSb under intense laser irradiation. The phonon entropy, phonon heat capacity, and phonon contribution to Helmholtz free energy and internal energy of InSb are calculated as functions of temperature at different electronic temperatures. The abrupt change in the phonon entropy- temperature curve from T{sub e} = 0.75 to 1.0 eV provides an indication of InSb undergoing a phase transition from solid to liquid. It can be considered as a collateral evidence of non-thermal melting for InSb under intense electronic excitation effect.

  20. DWPF SIMULANT CPC STUDIES FOR SB7B

    SciTech Connect (OSTI)

    Koopman, D.

    2011-11-01

    Lab-scale DWPF simulations of Sludge Batch 7b (SB7b) processing were performed. Testing was performed at the Savannah River National Laboratory - Aiken County Technology Laboratory (SRNL-ACTL). The primary goal of the simulations was to define a likely operating window for acid stoichiometry for the DWPF Sludge Receipt and Adjustment Tank (SRAT). In addition, the testing established conditions for the SRNL Shielded Cells qualification simulation of SB7b-Tank 40 blend, supported validation of the current glass redox model, and validated the coupled process flowsheet at the nominal acid stoichiometry. An acid window of 105-140% by the Koopman minimum acid (KMA) equation (107-142% DWPF Hsu equation) worked for the sludge-only flowsheet. Nitrite was present in the SRAT product for the 105% KMA run at 366 mg/kg, while SME cycle hydrogen reached 94% of the DWPF Slurry Mix Evaporator (SME) cycle limit in the 140% KMA run. The window was determined for sludge with added caustic (0.28M additional base, or roughly 12,000 gallons 50% NaOH to 820,000 gallons waste slurry). A suitable processing window appears to be 107-130% DWPF acid equation for sludge-only processing allowing some conservatism for the mapping of lab-scale simulant data to full-scale real waste processing including potentially non-conservative noble metal and mercury concentrations. This window should be usable with or without the addition of up to 7,000 gallons of caustic to the batch. The window could potentially be wider if caustic is not added to SB7b. It is recommended that DWPF begin processing SB7b at 115% stoichiometry using the current DWPF equation. The factor could be increased if necessary, but changes should be made with caution and in small increments. DWPF should not concentrate past 48 wt.% total solids in the SME cycle if moderate hydrogen generation is occurring simultaneously. The coupled flowsheet simulation made more hydrogen in the SRAT and SME cycles than the sludge-only run with the

  1. Illinois SB 1987: the Clean Coal Portfolio Standard Law

    SciTech Connect (OSTI)

    2009-01-15

    On January 12, 2009, Governor Rod Blagojevich signed SB 1987, the Clean Coal Portfolio Standard Law. The legislation establishes emission standards for new coal-fueled power plants power plants that use coal as their primary feedstock. From 2009-2015, new coal-fueled power plants must capture and store 50 percent of the carbon emissions that the facility would otherwise emit; from 2016-2017, 70 percent must be captured and stored; and after 2017, 90 percent must be captured and stored. SB 1987 also establishes a goal of having 25 percent of electricity used in the state to come from cost-effective coal-fueled power plants that capture and store carbon emissions by 2025. Illinois is the first state to establish a goal for producing electricity from coal-fueled power plants with carbon capture and storage (CCS). To support the commercial development of CCS technology, the legislation guarantees purchase agreements for the first Illinois coal facility with CCS technology, the Taylorville Energy Center (TEC); Illinois utilities are required to purchase at least 5 percent of their electricity supply from the TEC, provided that customer rates experience only modest increases. The TEC is expected to be completed in 2014 with the ability to capture and store at least 50 percent of its carbon emissions.

  2. Final Optics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    final optics Final Optics Schematic layout of NIF's final optics assembly (FOA). The suite of optics for one beamline is on the right. The final optics assemblies (FOAs) are the last element of the main laser system and the first of the target area systems. Each FOA contains four integrated optics modules (IOMs) that incorporate beam conditioning, frequency conversion, focusing, diagnostic sampling, and debris shielding capabilities into a single compact assembly. These optics are shown in the

  3. Telescope Adaptive Optics Code

    Energy Science and Technology Software Center (OSTI)

    2005-07-28

    The Telescope AO Code has general adaptive optics capabilities plus specialized models for three telescopes with either adaptive optics or active optics systems. It has the capability to generate either single-layer or distributed Kolmogorov turbulence phase screens using the FFT. Missing low order spatial frequencies are added using the Karhunen-Loeve expansion. The phase structure curve is extremely dose to the theoreUcal. Secondly, it has the capability to simulate an adaptive optics control systems. The defaultmore » parameters are those of the Keck II adaptive optics system. Thirdly, it has a general wave optics capability to model the science camera halo due to scintillation from atmospheric turbulence and the telescope optics. Although this capability was implemented for the Gemini telescopes, the only default parameter specific to the Gemini telescopes is the primary mirror diameter. Finally, it has a model for the LSST active optics alignment strategy. This last model is highly specific to the LSST« less

  4. Fiber optic fluid detector

    DOE Patents [OSTI]

    Angel, S. Michael

    1989-01-01

    Particular gases or liquids are detected with a fiber optic element (11, 11a to 11j) having a cladding or coating of a material (23, 23a to 23j) which absorbs the fluid or fluids and which exhibits a change of an optical property, such as index of refraction, light transmissiveness or fluoresence emission, for example, in response to absorption of the fluid. The fluid is sensed by directing light into the fiber optic element and detecting changes in the light, such as exit angle changes for example, that result from the changed optical property of the coating material. The fluid detector (24, 24a to 24j) may be used for such purposes as sensing toxic or explosive gases in the atmosphere, measuring ground water contamination or monitoring fluid flows in industrial processes, among other uses.

  5. Fiber optic fluid detector

    DOE Patents [OSTI]

    Angel, S.M.

    1987-02-27

    Particular gases or liquids are detected with a fiber optic element having a cladding or coating of a material which absorbs the fluid or fluids and which exhibits a change of an optical property, such as index of refraction, light transmissiveness or fluoresence emission, for example, in response to absorption of the fluid. The fluid is sensed by directing light into the fiber optic element and detecting changes in the light, such as exit angle changes for example, that result from the changed optical property of the coating material. The fluid detector may be used for such purposes as sensing toxic or explosive gases in the atmosphere, measuring ground water contamination or monitoring fluid flows in industrial processes, among other uses. 10 figs.

  6. Electrochemical studies of CNT/Si–SnSb nanoparticles for lithium ion batteries

    SciTech Connect (OSTI)

    Nithyadharseni, P.; Reddy, M.V.; Nalini, B.; Ravindran, T.R.; Pillai, B.C.; Kalpana, M.; Chowdari, B.V.R.

    2015-10-15

    Highlights: • Si added SnSb and CNT exhibits very low particle size of below 30 nm • A strong PL quenching due to the addition of Si to SnSb. • Electrochemical studies show CNT added SnSb shows good capacity retention. - Abstract: Nano-structured SnSb, SnSb–CNT, Si–SnSb and Si–SnSb–CNT alloys were synthesized from metal chlorides of Sn, Sb and Si via reductive co-precipitation technique using NaBH{sub 4} as reducing agent. The as prepared compounds were characterized by various techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), Raman, Fourier transform infra-red (FTIR) and photoluminescence (PL) spectroscopy. The electrochemical performances of the compounds were characterized by galvanostatic cycling (GC) and cyclic voltammetry (CV). The Si–SnSb–CNT compound shows a high reversible capacity of 1200 mAh g{sup −1}. However, the rapid capacity fading was observed during cycling. In contrast, SnSb–CNT compound showed a high reversible capacity of 568 mAh g{sup −1} at 30th cycles with good cycling stability. The improved reversible capacity and cyclic performance of the SnSb–CNT compound could be attributed to the nanosacle dimension of SnSb particles and the structural advantage of CNTs.

  7. Structural properties of Sb2S3 under pressure: Evidence of an electronic topological transition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Efthimiopoulos, Ilias; Buchan, Cienna; Wang, Yuejian

    2016-04-06

    High-pressure Raman spectroscopy and x-ray diffraction of Sb2S3 up to 53 GPa reveals two phase transitions at 5 GPa and 15 GPa. The first transition is evidenced by noticeable compressibility changes in distinct Raman-active modes, in the lattice parameter axial ratios, the unit cell volume, as well as in specific interatomic bond lengths and bond angles. By taking into account relevant results from the literature, we assign these effects to a second-order isostructural transition arising from an electronic topological transition in Sb2S3 near 5 GPa. Close comparison between Sb2S3 and Sb2S3 up to 10 GPa reveals a slightly diverse structuralmore » behavior for these two compounds after the isostructural transition pressure. This structural diversity appears to account for the different pressure-induced electronic behavior of Sb2S3 and Sb2S3 up to 10 GPa, i.e. the absence of an insulator-metal transition in Sb2S3 up to that pressure. Lastly, the second high-pressure modification appearing above 15 GPa appears to trigger a structural disorder at ~20 GPa; full decompression from 53 GPa leads to the recovery of an amorphous state.« less

  8. Pressure dependence of donor excitation spectra in AlSb

    SciTech Connect (OSTI)

    Hsu, L.; McCluskey, M.D.; Haller, E.E.

    2002-01-16

    We have investigated the behavior of ground to bound excited-state electronic transitions of Se and Te donors in AlSb as a function of hydrostatic pressure. Using broadband far-infrared Fourier transform spectroscopy, we observe qualitatively different behaviors of the electronic transition energies of the two donors. While the pressure derivative of the Te transition energy is small and constant, as might be expected for a shallow donor, the pressure derivatives of the Se transition energies are quadratic and large at low pressures, indicating that Se is actually a deep donor. In addition, at pressures between 30 and 50 kbar, we observe evidence of an anti-crossing between one of the selenium electronic transitions and a two-phonon mode.

  9. Quantum Optics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy Frontier Research Centers: Solid-State Lighting Science Center for Frontiers of ... Quantum Optics HomeEnergy ResearchEFRCsSolid-State Lighting Science EFRCQuantum Optics ...

  10. ARM - Atmospheric Heat Budget

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Atmospheric Heat Budget shows where the atmospheric heat energy comes from and where it goes. Practically all this energy ultimately comes from the sun in the form of the ...

  11. Atmospheric Radiation Measurement Program

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 ARM 2003 Tom Ackerman Chief Scientist Tom Ackerman Chief Scientist ARM ARM Atmospheric Radiation Measurement Atmospheric Radiation Measurement WARNING! WARNING! Today is April 1 But that has NO bearing on this message Today is April 1 But that has NO bearing on this message ARM ARM Atmospheric Radiation Measurement Atmospheric Radiation Measurement Two Topics Two Topics * Status of ARM (quick overview) * Science plan - ARM in the next 5 years * Status of ARM (quick overview) * Science plan -

  12. In-situ TEM study of sodiation and failure mechanism of Sb anodes...

    Office of Scientific and Technical Information (OSTI)

    Title: In-situ TEM study of sodiation and failure mechanism of Sb anodes. Abstract not provided. Authors: XueHai Tan ; Jungjohann, Katherine Leigh ; Mook, William ; David Mitlin ...

  13. A new n-type half-Heusler thermoelectric material NbCoSb (Journal...

    Office of Scientific and Technical Information (OSTI)

    new n-type half-Heusler thermoelectric material NbCoSb Citation Details In-Document Search This content will become publicly available on June 15, 2017 Title: A new n-type ...

  14. A new n-type half-Heusler thermoelectric material NbCoSb (Journal...

    Office of Scientific and Technical Information (OSTI)

    A new n-type half-Heusler thermoelectric material NbCoSb This content will become publicly available on June 15, 2017 Prev Next Title: A new n-type half-Heusler ...

  15. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  16. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials...

    Office of Scientific and Technical Information (OSTI)

    Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials ... Resource Relation: Journal Name: Appl. Phys. Lett.; Journal Volume: 104; Journal Issue: 25 Research ...

  17. Optical microspectrometer

    DOE Patents [OSTI]

    Sweatt, William C.; Christenson, Todd R.

    2004-05-25

    An optical microspectrometer comprises a grism to disperse the spectra in a line object. A single optical microspectrometer can be used to sequentially scan a planar object, such as a dye-tagged microchip. Because the optical microspectrometer is very compact, multiple optical microspectrometers can be arrayed to provide simultaneous readout across the width of the planar object The optical microspectrometer can be fabricated with lithographic process, such as deep X-ray lithography (DXRL), with as few as two perpendicular exposures.

  18. Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells

    SciTech Connect (OSTI)

    Kim, Yeongho; Ban, Keun-Yong Zhang, Chaomin; Honsberg, Christiana B.

    2015-10-12

    We have studied the material and photovoltaic characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells (QDSCs) with different Sb contents of 0%, 5%, 15%, and 20%. All QDSCs exhibit an extended external quantum efficiency (EQE) response in the wavelength range of 960–1000 nm that corresponds to sub-bandgap photon absorption. As Sb content increases from 5% to 20%, the cutoff wavelength in the EQE extends towards longer wavelength whilst the EQE in the wavelength region of 300–880 nm is lowered due to increased defect density. Compared to the QDSC (Sb 0%), an Sb incorporation of 5% enhances the short-circuit current density from 20.65 to 22.15 mA/cm{sup 2} induced by Sb surfactant effect. Since the open-circuit voltage and fill factor of the QDSC (Sb 5%) are comparable to those of the QDSC (Sb 0%), an enhancement in solar cell efficiency (10.5%) of the QDSC (Sb 5%) is observed. Further increasing Sb content to 15% and 20% results in the degradation of solar cell performance due to increased nonradiative recombination and large valence band offset in a type-II band line-up.

  19. Structure and magnetic properties of LnMnSbO ( Ln=La and Ce)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Qiang; Kumar, C. M. N.; Tian, Wei; Dennis, Kevin W.; Goldman, Alan I.; Vaknin, David

    2016-03-11

    Here, a neutron powder diffraction (NPD) study of LnMnSbO (Ln = La or Ce) reveals differences between the magnetic ground state of the two compounds due to the strong Ce-Mn coupling compared to La-Mn. The two compounds adopt the P4/nmm space group down to 2 K, and whereas magnetization measurements do not show obvious anomaly at high temperatures, NPD reveals a C-type antiferromagnetic (AFM) order below TN = 255K for LaMnSbO and 240 K for CeMnSbO. While the magnetic structure of LaMnSbO is preserved to base temperature, a sharp transition at TSR = 4.5K is observed in CeMnSbO due tomore » a spin-reorientation (SR) transition of the Mn2+ magnetic moments from pointing along the c axis to the ab plane. The SR transition in CeMnSbO is accompanied by a simultaneous long-range AFM ordering of the Ce moments, which indicates that the Mn SR transition is driven by the Ce-Mn coupling. The ordered moments are found to be somewhat smaller than those expected for Mn2+ (S = 5/2) in insulators, but large enough to suggest that these compounds belong to the class of local-moment antiferromagnets. The lower TN found in these two compounds compared to the As-based counterparts (TN = 317 for LaMnAsO, TN = 347K for CeMnAsO) indicates that the Mn-Pn (Pn=As or Sb) hybridization that mediates the superexchange Mn-Pn-Mn coupling is weaker for the Sb-based compounds.« less

  20. AlSb/InAs HIGH ELECTRON MOBILITY TRANSISTORS - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electricity Transmission Electricity Transmission Advanced Materials Advanced Materials Find More Like This Return to Search AlSb/InAs HIGH ELECTRON MOBILITY TRANSISTORS Naval Research Laboratory Contact NRL About This Technology Technology Marketing Summary The Naval Research Laboratory (NRL) has developed materials growth and fabrication technology for the manufacture of high-speed, low power AlSb/InAs high electron mobility transistors (HEMTs) that exhibit state-of-the-art low-power

  1. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Authors: Shu, Michael J. ; Zalden, Peter ; Chen, Frank ; Weems, Ben ; Chatzakis, Ioannis ; Xiong, Feng ; Jeyasingh, Rakesh ; Hoffmann, Matthias C. ; Pop, Eric ; Wong, H.-S.Philip ; Wuttig, Matthias ; Lindenberg, Aaron M. Publication Date: 2014-07-08 OSTI

  2. Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

    SciTech Connect (OSTI)

    Mitchel, W. C. Haugan, H. J.; Mou, Shin; Brown, G. J.; Elhamri, S.; Berney, R.

    2015-09-15

    Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overall mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers.

  3. Antiferromagnetic ordering in the doped Kondo insulator CeRhSb

    SciTech Connect (OSTI)

    Menon, L.; Malik, S.K.

    1997-06-01

    CeRhSb, the so-called {open_quotes}Kondo insulator,{close_quotes} is a mixed-valent compound showing a gap formation in the electronic density of states. On the other hand, CePdSb is ferromagnetically ordered with a Curie temperature of {approximately}17 K. We have carried out magnetic susceptibility and electrical resistivity measurements on CeRh{sub 1{minus}x}Pd{sub x}Sb (0{le}x{le}1.0), to study the ground-state properties of this system. For small Pd doping in CeRhSb, up to 20{percent}, the gap continually diminishes and no magnetic ordering is observed down to 2 K. In the region 0.3{le}x{le}0.4, as soon as the gap is suppressed, an antiferromagnetic ground state is observed. In the region 0.5{le}x{lt}0.7, the compounds are not single phase. At the CePdSb end, in the region 0.7{le}x{le}1, the ground state is ferromagnetic. The observation of an antiferromagnetic phase in the phase diagram of CeRh{sub 1{minus}x}Pd{sub x}Sb, where neither end is antiferromagnetic, is interesting and is discussed in the light of some recent theoretical models. {copyright} {ital 1997} {ital The American Physical Society}

  4. The magnetic structure of EuCu2Sb2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryan, D. H.; Cadogan, J. M.; Anand, V. K.; Johnston, D. C.; Flacau, R.

    2015-05-06

    Antiferromagnetic ordering of EuCu2Sb2 which forms in the tetragonal CaBe2Ge2-type structure (space group P4/nmm #129) has been studied using neutron powder diffraction and 151Eu Mössbauer spectroscopy. The room temperature 151Eu isomer shift of –12.8(1) mm/s shows the Eu to be divalent, while the 151Eu hyperfine magnetic field (Bhf) reaches 28.7(2) T at 2.1 K, indicating a full Eu2+ magnetic moment. Bhf(T) follows a smoothmore » $$S=\\frac{7}{2}$$ Brillouin function and yields an ordering temperature of 5.1(1) K. Refinement of the neutron diffraction data reveals a collinear A-type antiferromagnetic arrangement with the Eu moments perpendicular to the tetragonal c-axis. As a result, the refined Eu magnetic moment at 0.4 K is 7.08(15) μB which is the full free-ion moment expected for the Eu2+ ion with $$S=\\frac{7}{2}$$ and a spectroscopic splitting factor of g = 2.« less

  5. Interconnection of thermal parameters, microstructure and mechanical properties in directionally solidified Sn–Sb lead-free solder alloys

    SciTech Connect (OSTI)

    Dias, Marcelino; Costa, Thiago; Rocha, Otávio; Spinelli, José E.; Cheung, Noé; Garcia, Amauri

    2015-08-15

    Considerable effort is being made to develop lead-free solders for assembling in environmental-conscious electronics, due to the inherent toxicity of Pb. The search for substitute alloys of Pb–Sn solders has increased in order to comply with different soldering purposes. The solder must not only meet the expected levels of electrical performance but may also have appropriate mechanical strength, with the absence of cracks in the solder joints. The Sn–Sb alloy system has a range of compositions that can be potentially included in the class of high temperature solders. This study aims to establish interrelations of solidification thermal parameters, microstructure and mechanical properties of Sn–Sb alloys (2 wt.%Sb and 5.5 wt.%Sb) samples, which were directionally solidified under cooling rates similar to those of reflow procedures in industrial practice. A complete high-cooling rate cellular growth is shown to be associated with the Sn–2.0 wt.%Sb alloy and a reverse dendrite-to-cell transition is observed for the Sn–5.5 wt.%Sb alloy. Strength and ductility of the Sn–2.0 wt.%Sb alloy are shown not to be affected by the cellular spacing. On the other hand, a considerable variation in these properties is associated with the cellular region of the Sn–5.5 wt.%Sb alloy casting. - Graphical abstract: Display Omitted - Highlights: • The microstructure of the Sn–2 wt.%Sb alloy is characterized by high-cooling rates cells. • Reverse dendrite > cell transition occurs for Sn–5.5 wt.%Sb alloy: cells prevail for cooling rates > 1.2 K/s. • Sn–5.5 wt.%Sb alloy: the dendritic region occurs for cooling rates < 0.9 K/s. • Sn–5.5 wt.%Sb alloy: tensile properties are improved with decreasing cellular spacing.

  6. Solvothermal synthesis of graphene-Sb{sub 2}S{sub 3} composite and the degradation activity under visible light

    SciTech Connect (OSTI)

    Tao, Wenguang; Chang, Jiuli; Wu, Dapeng; Gao, Zhiyong; Duan, Xiaoli; Xu, Fang; Engineering Technology Research Center of Motive Power and Key Materials, Henan, 453007 ; Jiang, Kai; Engineering Technology Research Center of Motive Power and Key Materials, Henan, 453007

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ? Graphene-Sb{sub 2}S{sub 3} composites were synthesized through a facile solvothermal method. ? Hydroxyl radicals are the main species responsible for the photodegradation activity. ? Graphene-Sb{sub 2}S{sub 3} demonstrated dramatically improved visible light degradation activity. -- Abstract: Novel graphene-Sb{sub 2}S{sub 3} (G-Sb{sub 2}S{sub 3}) composites were synthesized via a facile solvothermal method with graphene oxide (GO), SbCl{sub 3} and thiourea as the reactants. GO played an important role in controlling the size and the distribution of the formed Sb{sub 2}S{sub 3} nanoparticles on the graphene sheets with different density. Due to the negative surface charge, smaller Sb{sub 2}S{sub 3} particles size and efficient electrons transfer from Sb{sub 2}S{sub 3} to graphene, the composites demonstrated improved photodegradation activity on rhodamine B (RhB). Among these composites, the product G-Sb{sub 2}S{sub 3} 0.1, which was synthesized with the GO concentration of 0.1 mg/mL, exhibited the highest photodegradation activity owing to the considerable density of Sb{sub 2}S{sub 3} nanoparticles onto graphene sheet free of aggregation. Hydroxyl radicals (OH) derived from conduction band (CB) electrons of Sb{sub 2}S{sub 3} is suggested to be responsible for the photodegradation of RhB. The high visible light degradation activity and the satisfactory cycling stability made the as-prepared G-Sb{sub 2}S{sub 3} 0.1 an applicable photocatalyst.

  7. Community Atmosphere Model

    Energy Science and Technology Software Center (OSTI)

    2004-10-18

    The Community Atmosphere Model (CAM) is an atmospheric general circulation model that solves equations for atmospheric dynamics and physics. CAM is an outgrowth of the Community Climate Model at the National Center for Atmospheric Research (NCAR) and was developed as a joint collaborative effort between NCAR and several DOE laboratories, including LLNL. CAM contains several alternative approaches for advancing the atmospheric dynamics. One of these approaches uses a finite-volume method originally developed by personnel atmore » NASNGSFC, We have developed a scalable version of the finite-volume solver for massively parallel computing systems. FV-CAM is meant to be used in conjunction with the Community Atmosphere Model. It is not stand-alone.« less

  8. Optical probe

    DOE Patents [OSTI]

    Hencken, Kenneth; Flower, William L.

    1999-01-01

    A compact optical probe is disclosed particularly useful for analysis of emissions in industrial environments. The instant invention provides a geometry for optically-based measurements that allows all optical components (source, detector, rely optics, etc.) to be located in proximity to one another. The geometry of the probe disclosed herein provides a means for making optical measurements in environments where it is difficult and/or expensive to gain access to the vicinity of a flow stream to be measured. Significantly, the lens geometry of the optical probe allows the analysis location within a flow stream being monitored to be moved while maintaining optical alignment of all components even when the optical probe is focused on a plurality of different analysis points within the flow stream.

  9. Optical keyboard

    DOE Patents [OSTI]

    Veligdan, James T.; Feichtner, John D.; Phillips, Thomas E.

    2001-01-01

    An optical keyboard includes an optical panel having optical waveguides stacked together. First ends of the waveguides define an inlet face, and opposite ends thereof define a screen. A projector transmits a light beam outbound through the waveguides for display on the screen as a keyboard image. A light sensor is optically aligned with the inlet face for sensing an inbound light beam channeled through the waveguides from the screen upon covering one key of the keyboard image.

  10. Atmosphere to Electrons

    Broader source: Energy.gov (indexed) [DOE]

    ... Wind Forecast Improvement Project The Wind Forecast Improvement Project (WFIP) is a public private partnership consortium including DOE, the National Oceanic and Atmospheric ...

  11. Optical Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    seven wonders / optical switch Optical Switch A key component in the laser chain, an optical switch called a plasma electrode Pockels cell (PEPC), was invented and developed at LLNL. A Pockels cell rotates the polarization of a laser beam when a voltage is applied across an electro-optic crystal. Depending on the voltage applied, the Pockels cell either allows light to pass through or to reflect off a polarizer, creating an optical switch. For each of NIF's 192 beamlines, a PEPC allows the laser

  12. Electron-phonon coupling and thermal transport in the thermoelectric compound Mo3Sb7–xTex

    SciTech Connect (OSTI)

    Bansal, Dipanshu; Li, Chen W.; Said, Ayman H.; Abernathy, Douglas L.; Yan, Jiaqiang; Delaire, Olivier A.

    2015-12-07

    Phonon properties of Mo3Sb7–xTex (x = 0, 1.5, 1.7), a potential high-temperature thermoelectric material, have been studied with inelastic neutron and x-ray scattering, and with first-principles simulations. The substitution of Te for Sb leads to pronounced changes in the electronic struc- ture, local bonding, phonon density of states (DOS), dispersions, and phonon lifetimes. Alloying with tellurium shifts the Fermi level upward, near the top of the valence band, resulting in a strong suppression of electron-phonon screening, and a large overall stiffening of interatomic force- constants. The suppression in electron-phonon coupling concomitantly increases group velocities and suppresses phonon scattering rates, surpassing the effects of alloy-disorder scattering, and re- sulting in a surprising increased lattice thermal conductivity in the alloy. We also identify that the local bonding environment changes non-uniformly around different atoms, leading to variable perturbation strengths for different optical phonon branches. The respective roles of changes in phonon group velocities and phonon lifetimes on the lattice thermal conductivity are quantified. Lastly, our results highlight the importance of the electron-phonon coupling on phonon mean-free-paths in this compound, and also estimates the contributions from boundary scattering, umklapp scattering, and point-defect scattering.

  13. Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy

    SciTech Connect (OSTI)

    Hosseini Vajargah, S.; Botton, G. A.; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.

    2012-11-01

    A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 - 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.

  14. Sb{sub 2}O{sub 4} at high pressures and high temperatures

    SciTech Connect (OSTI)

    Orosel, D.; Balog, P.; Liu, H.; Qian, J.; Jansen, M. . E-mail: m.jansen@fkf.mpg.de

    2005-09-15

    Investigations on Sb{sub 2}O{sub 4} at high pressure and temperature have been performed up to 600{sup o}C and up to 27.3GPa. The so-called 'high temperature' phase ({beta}-Sb{sub 2}O{sub 4}) was obtained following pressure increase at ambient temperature and at relatively low temperatures. Thus, in contrast to previous perceptions, {beta}-Sb{sub 2}O{sub 4} is the modification more stable at high pressures, i.e., at low temperatures. The fact that the metastable {alpha}-form is typically obtained through the conventional way of preparation has to be attributed to kinetic effects. The pressure-induced phase transitions have been monitored by in-situ X-ray diffraction in a diamond anvil cell, and confirmed ex-situ, by X-ray diffraction at ambient conditions, following temperature decrease and decompression in large volume devices. Bulk modulus values have been derived from the pressure-induced volume changes at room temperature, and are 143GPa for {alpha}-Sb{sub 2}O{sub 4} and 105GPa for the {beta}-Sb{sub 2}O{sub 4}.

  15. Performance Study of K2CsSb Photocathode Inside a DC High Voltage Gun

    SciTech Connect (OSTI)

    McCarter J. L.; Rao T.; Smedley, J.; Grames, J.; Mammei, R.; Poelker, M.; Suleiman, R.

    2011-09-01

    In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K{sub 2}CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the K{sub 2}CsSb photocathode inside a DC gun. Since the multialkali cathode is a compound with constant characteristics over its entire thickness, we anticipate that the lifetime issues seen in GaAs:Cs due to surface damage by ion bombardment would be minimized. Hence successful operation of the K{sub 2}CsSb cathode in a DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of a K{sub 2}CsSb cathode in a DC gun, we have designed and built a load lock system that allows the fabrication of the cathode at Brookhaven National Lab (BNL) and its testing at Jefferson Lab (JLab). In this paper, we will present the performance of the K{sub 2}CsSb photocathode in the preparation chamber and in the DC gun.

  16. Fragile structural transition in Mo3Sb7

    SciTech Connect (OSTI)

    Yan, Jiaqiang -Q.; McGuire, Michael A; May, Andrew F; Parker, David S.; Mandrus, D. G.; Sales, Brian C.

    2015-08-10

    Mo3Sb7 single crystals lightly doped with Cr, Ru, or Te are studied in order to explore the interplay between superconductivity, magnetism, and the cubic-tetragonal structural transition. The structural transition at 53 K is extremely sensitive to Ru or Te substitution which introduces additional electrons, but robust against Cr substitution. We observed no sign of a structural transition in superconducting Mo2.91Ru0.09Sb7 and Mo3Sb6.975Te0.025. In contrast, 3 at.% Cr doping only slightly suppresses the structural transition to 48 K while leaving no trace of superconductivity above 1.8 K. Analysis of magnetic properties suggests that the interdimer interaction in Mo3Sb7 is near a critical value and essential for the structural transition. Futhermore, all dopants suppress the superconductivity of Mo3Sb7. The tetragonal structure is not necessary for superconductivity.

  17. Superconductivity in strong spin orbital coupling compound Sb2Se3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kong, P. P.; Sun, F.; Xing, L. Y.; Zhu, J.; Zhang, S. J.; Li, W. M.; Liu, Q. Q.; Wang, X. C.; Feng, S. M.; Yu, X. H.; et al

    2014-10-20

    Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand was found to be topological trivial, but theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial state. We report on the discovery of superconductivity in Sb2Se3 single crystal induced via pressure. Our experiments indicated that Sb2Se3 became superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition at ~3 GPa which should be related tomore » the topological quantum transition. The superconducting transition temperature (TC) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. As a result, high pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of TC slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.« less

  18. Synthesis, characterization and physical properties of the skutterudites Yb{sub x}Fe{sub 2}Ni{sub 2}Sb{sub 12} (0{<=}x{<=}0.4)

    SciTech Connect (OSTI)

    Kaltzoglou, Andreas; Vaqueiro, Paz; Knight, Kevin S.; Powell, Anthony V.

    2012-09-15

    The skutterudites Yb{sub x}Fe{sub 2}Ni{sub 2}Sb{sub 12} (0{<=}x{<=}0.4) have been prepared by solid-state reaction and characterised by powder X-ray diffraction. The compounds crystallise in the cubic space group Im3{sup Macron} (a Almost-Equal-To 9.1 A) with Yb atoms partially filling the voids in the skutterudite framework. A neutron time-of-flight diffraction experiment for Fe{sub 2}Ni{sub 2}Sb{sub 12} confirms the disorder of Fe and Ni atoms on the transition-metal site. Electrical resistivity, Seebeck coefficient and thermal conductivity measurements indicate that the thermoelectric performance of the skutterudites shows a marked dependence on the Yb content. Magnetic measurements over the temperature range 2{<=}T/K{<=}300 show paramagnetic behaviour for all compounds. Decomposition studies under an oxidising atmosphere at elevated temperatures have also been carried out by thermogravimetric analysis. - Graphical abstract: The filled skutterudites Yb{sub x}Fe{sub 2}Ni{sub 2}Sb{sub 12} have been prepared by solid-state reaction and characterised by powder X-ray diffraction. The thermoelectric performance depends strongly on the Yb content. The physical properties and thermal stability of the compounds are further discussed in comparison with the current state-of-the art thermoelectric skutterudites. Highlights: Black-Right-Pointing-Pointer A new series of skutterudites has been prepared and characterised. Black-Right-Pointing-Pointer Physical properties are affected by the degree of Yb filling. Black-Right-Pointing-Pointer The highest thermoelectric performance is found for Yb{sub 0.15}Fe{sub 2}Ni{sub 2}Sb{sub 12}. Black-Right-Pointing-Pointer The skutterudites decompose in air above 550 K.

  19. Resistivity During Boiling in the SB-15-D Core from the Geysers Geothermal Field: The Effects of Capillarity

    SciTech Connect (OSTI)

    Roberts, J.; Duba, A.; Bonner, B.; Kasameyer, P.

    1997-01-01

    In a laboratory study of cores from borehole SB-15-D in The Geysers geothermal area, we measured the electrical resistivity of metashale with and without pore-pressure control, with confining pressures up to 100 bars and temperatures between 20 and 150 C, to determine how the pore-size distribution and capillarity affected boiling. We observed a gradual increase in resistivity when the downstream pore pressure or confining pressure decreased below the phase boundary of free water. For the conditions of this experiment, boiling, as indicated by an increase in resistivity, is initiated at pore pressures of approximately 0.5 to 1 bar (0.05 to 0.1 MPa) below the free-water boiling curve, and it continues to increase gradually as pressure is lowered to atmospheric. A simple model of the effects of capillarity suggests that at 145 C, less than 15% of the pore water can boil in these rocks. If subsequent experiments bear out these preliminary observations, then boiling within a geothermal reservoir is controlled not just by pressure and temperature but also by pore-size distribution. Thus, it may be possible to determine reservoir characteristics by monitoring changes in electrical resistivity as reservoir conditions change.

  20. An Air-Stable Na3SbS4 Superionic Conductor Prepared by a Rapid and Economic Synthetic Procedure

    SciTech Connect (OSTI)

    Wang, Hui; Chen, Yan; Hood, Zachary; Peng, Rui; Samuthira Pandian, Amaresh; Keum, Jong Kahk; Wu, Zili; An, Ke; Liang, Chengdu

    2016-01-01

    All-solid-state sodium batteries, using abundant sodium resources and solid electrolyte, hold much promise for safe, low cost, large-scale energy storage. To realize the practical applications of all solid Na-ion batteries at ambient temperature, the solid electrolytes are required to have high ionic conductivity, chemical stability, and ideally, easy preparation. Ceramic electrolytes show higher ionic conductivity than polymers, but they often require extremely stringent synthesis conditions, either high sintering temperature above 1000 C or long-time, low-energy ball milling. Herein, we report a new synthesis route for Na3SbS4, a novel Na superionic conductor that needs much lower processing temperature below 200 C and easy operation. This new solid electrolyte exhibits a remarkable ionic conductivity of 1.05 mS cm-1 at 25 C and is chemically stable under ambient atmosphere. This synthesis process provides unique insight into the current state-of-the-art solid electrolyte preparation and opens new possibilities for the design of similar materials.

  1. An Air-Stable Na3SbS4 Superionic Conductor Prepared by a Rapid and Economic Synthetic Procedure

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Hui; Chen, Yan; Hood, Zachary; Peng, Rui; Samuthira Pandian, Amaresh; Keum, Jong Kahk; Wu, Zili; An, Ke; Liang, Chengdu

    2016-01-01

    All-solid-state sodium batteries, using abundant sodium resources and solid electrolyte, hold much promise for safe, low cost, large-scale energy storage. To realize the practical applications of all solid Na-ion batteries at ambient temperature, the solid electrolytes are required to have high ionic conductivity, chemical stability, and ideally, easy preparation. Ceramic electrolytes show higher ionic conductivity than polymers, but they often require extremely stringent synthesis conditions, either high sintering temperature above 1000 C or long-time, low-energy ball milling. Herein, we report a new synthesis route for Na3SbS4, a novel Na superionic conductor that needs much lower processing temperature below 200 Cmore » and easy operation. This new solid electrolyte exhibits a remarkable ionic conductivity of 1.05 mS cm-1 at 25 C and is chemically stable under ambient atmosphere. This synthesis process provides unique insight into the current state-of-the-art solid electrolyte preparation and opens new possibilities for the design of similar materials.« less

  2. Elastic strains at interfaces in InAs/AlSb multilayer structures for quantum cascade lasers

    SciTech Connect (OSTI)

    Nicolai, J.; Gatel, Ch.; Warot-Fonrose, B.; Ponchet, A.; Teissier, R.; Baranov, A. N.; Magen, C.

    2014-01-20

    InAs/AlSb multilayers similar to those used in quantum cascade lasers have been grown by molecular beam epitaxy on (001) InAs substrates. Elastic strain is investigated by high resolution transmission electron microscopy. Thin interfacial regions with lattice distortions significantly different from the strain of the AlSb layers themselves are revealed from the geometrical phase analysis. Strain profiles are qualitatively compared to the chemical contrast of high angle annular dark field images obtained by scanning transmission electron microscopy. The strain and chemical profiles are correlated with the growth sequences used to form the interfaces. Tensile strained AlAs-like interfaces tend to form predominantly due to the high thermal stability of AlAs. Strongly asymmetric interfaces, AlAs-rich and (Al, In)Sb, respectively, can also be achieved by using appropriate growth sequences.

  3. Natural nanostructure and superlattice nanodomains in AgSbTe{sub 2}

    SciTech Connect (OSTI)

    Carlton, Christopher E.; De Armas, Ricardo; Shao-Horn, Yang E-mail: shaohorn@mit.edu; Ma, Jie; May, Andrew F.; Delaire, Olivier E-mail: shaohorn@mit.edu

    2014-04-14

    AgSbTe{sub 2} has long been of interest for thermoelectric applications because of its favorable electronic properties and its low lattice thermal conductivity of ?0.7?W/mK. In this work, we report new findings from a high-resolution transmission electron microscopy study revealing two nanostructures in single crystal Ag{sub 1?x}Sb{sub 1+x}Sb{sub 2+x} (with x?=?0, 0.1, 0.2); (i) a rippled natural nanostructure with a period of ?2.55?nm and (ii) superlattice ordered nanodomains consistent with cation ordering predicted in previous density functional theory studies. These nanostructures, combined with point-defects, probably serve as sources of scattering for phonons, thereby yielding a low lattice thermal conductivity over a wide temperature range.

  4. Study of the shape of an optical window in a super-resolution state by electromagnetic-thermal coupled simulation: Effects of melting of an active layer in an optical disc

    SciTech Connect (OSTI)

    Sano, Haruyuki; Shima, Takayuki; Kuwahara, Masashi; Fujita, Yoshiya; Uchiyama, Munehisa; Aono, Yoshiyuki

    2014-04-21

    We performed a multi-physics simulation for the propagation of electromagnetic waves and heat conduction in a super-resolution optical disc that includes an active layer of InSb. Because the change in the optical constant of InSb due to the phase transition is taken into account, the melting of the active layer can be realistically simulated in our calculation. It was found that in the case of an incident light power (P) of 2 mW, a profile of the electric field intensity transmitted through the InSb layer has an asymmetric shape with a narrow peak. This beam-narrowing was suggested to be an essential mechanism of the super-resolution, because a narrower light beam allows the detection of a smaller pit structure than the optical diffraction limit. This beam-narrowing was found to be originating from a small molten region produced in the InSb layer, which works as a mask for light exposure.

  5. Optical humidity sensor

    DOE Patents [OSTI]

    Tarvin, Jeffrey A.

    1987-01-01

    An optical dielectric humidity sensor which includes a dielectric mirror having multiple alternating layers of two porous water-adsorbent dielectric materials with differing indices of refraction carried by a translucent substrate. A narrow-band polarized light source is positioned to direct light energy onto the mirror, and detectors are positioned to receive light energy transmitted through and reflected by the mirror. A ratiometer indicates humidity in the atmosphere which surrounds the dielectric mirror as a function of a ratio of light energies incident on the detectors.

  6. Optical humidity sensor

    DOE Patents [OSTI]

    Tarvin, J.A.

    1987-02-10

    An optical dielectric humidity sensor is disclosed which includes a dielectric mirror having multiple alternating layers of two porous water-adsorbent dielectric materials with differing indices of refraction carried by a translucent substrate. A narrow-band polarized light source is positioned to direct light energy onto the mirror, and detectors are positioned to receive light energy transmitted through and reflected by the mirror. A ratiometer indicates humidity in the atmosphere which surrounds the dielectric mirror as a function of a ratio of light energies incident on the detectors. 2 figs.

  7. The Crystallization Behavior of Stochiometric and Off-stochiometric Ga-Sb-Te Materials for Phase-Change Memory

    SciTech Connect (OSTI)

    H Cheng; S Raoux; J Jordan-Sweet

    2011-12-31

    The stoichiometric Ga{sub 4}Sb{sub 6}Te{sub 3} and Ga-Sb materials were systematically studied. The alloy Ga{sub 4}Sb{sub 6}Te{sub 3} shows a fast crystallization speed, very high crystallization temperature, T{sub x}, and high electrical contrast. Although stoichiometric GaSb has similar performance and even faster crystallization speed, the electrical contrast is much lower. The other off-stoichiometric compounds we studied all have higher T{sub x} than Ge{sub 2}Sb{sub 2}Te{sub 5} indicating a good amorphous stability. By raising the Sb/Te ratio with GaSb incorporation, T{sub x} and the recrystallization time of melt-quenched, amorphous samples can be effectively increased. The stoichiometric Ga{sub 4}Sb{sub 6}Te{sub 3} with less likelihood of phase-segregation compared to nonstoichiometric compounds is a promising candidate for phase-change memory.

  8. Evaluation Of Glass Density To Support The Estimation Of Fissile Mass Loadings From Iron Concentrations In SB8 Glasses

    SciTech Connect (OSTI)

    Edwards, T. B.; Peeler, D. K.; Kot, W. K.; Gan, H.; Pegg, I. L.

    2013-04-30

    The Department of Energy Savannah River (DOE-SR) has provided direction to Savannah River Remediation (SRR) to maintain fissile concentration in glass below 897 g/m{sup 3}. In support of that guidance, the Savannah River National Laboratory (SRNL) provided a technical basis and a supporting Microsoft Excel spreadsheet for the evaluation of fissile loading in Sludge Batch 5 (SB5), Sludge Batch 6 (SB6), Sludge Batch 7a (SB7a), and Sludge Batch 7b (SB7b) glass based on the iron (Fe) concentration in glass as determined by the measurements from the Slurry Mix Evaporator (SME) acceptability analysis. SRR has since requested that the necessary density information be provided to allow SRR to update the Excel spreadsheet so that it may be used to maintain fissile concentration in glass below 897 g/m{sup 3} during the processing of Sludge Batch 8 (SB8). One of the primary inputs into the fissile loading spreadsheet includes an upper bound for the density of SB8-based glasses. Thus, these bounding density values are to be used to assess the fissile concentration in this glass system. It should be noted that no changes are needed to the underlying structure of the Excel-based spreadsheet to support fissile assessments for SB8. However, SRR should update the other key inputs to the spreadsheet that are based on fissile and Fe concentrations reported from the SB8 Waste Acceptance Product Specification (WAPS) sample.

  9. Ensemble Atmospheric Dispersion Modeling

    SciTech Connect (OSTI)

    Addis, R.P.

    2002-06-24

    Prognostic atmospheric dispersion models are used to generate consequence assessments, which assist decision-makers in the event of a release from a nuclear facility. Differences in the forecast wind fields generated by various meteorological agencies, differences in the transport and diffusion models, as well as differences in the way these models treat the release source term, result in differences in the resulting plumes. Even dispersion models using the same wind fields may produce substantially different plumes. This talk will address how ensemble techniques may be used to enable atmospheric modelers to provide decision-makers with a more realistic understanding of how both the atmosphere and the models behave.

  10. Nanoscale structure in AgSbTe2 determined by diffuse elastic neutron scattering

    SciTech Connect (OSTI)

    Specht, Eliot D [ORNL; Ma, Jie [ORNL; Delaire, Olivier A [ORNL; Budai, John D [ORNL; May, Andrew F [ORNL; Karapetrova, Evguenia A. [Argonne National Laboratory (ANL)

    2015-01-01

    Diffuse elastic neutron scattering measurements confirm that AgSbTe2 has a hierarchical structure, with defects on length scales from nanometers to microns. While scattering from mesoscale structure is consistent with previously-proposed structures in which Ag and Sb order on a NaCl lattice, more diffuse scattering from nanoscale structure suggests a structural rearrangement in which hexagonal layers form a combination of (ABC), (ABA), and (AAB) stacking sequences. The AgCrSe2 structure is the best-fitting model for the local atomic arrangements.

  11. An Instrumentation Complex for Atmospheric Radiation Measurements in Siberia

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Instrumentation Complex for Atmospheric Radiation Measurements in Siberia S. M. Sakerin, F. V. Dorofeev, D. M. Kabanov, V. S. Kozlov, M. V. Panchenko, Yu. A. Pkhalagov, V. V. Polkin, V. P. Shmargunov, S. A. Terpugova, S. A. Turchinovich, and V. N. Uzhegov Institute of Atmospheric Optics Tomsk, Russia Introduction The instrumentation complex is described, which has been prepared for radiative experiments in the region of Tomsk (West Siberia). The complex consists of three groups of devices to

  12. Low temperature fabrication and doping concentration analysis of Au/Sb ohmic contacts to n-type Si

    SciTech Connect (OSTI)

    Liu, J. Q.; Wang, C.; Zhu, T.; Wu, W. J.; Fan, J.; Tu, L. C.

    2015-11-15

    This paper investigates low temperature ohmic contact formation of Au/Sb to n-type Si substrates through AuSb/NiCr/Au metal stacks. Liquid epitaxy growth is utilized to incorporate Sb dopants into Si substrate in AuSi melt. The best specific contact resistivity achieved is 0.003 Ω ⋅ cm{sup 2} at 425 {sup o}C. Scanning electron microscopy (SEM) reveals inverted pyramidal crater regions at the metal/semiconductor interface, indicating that AuSi alloying efficiently occurs at such sites. Secondary ion mass spectroscopy (SIMS) shows that Sb atoms are successfully incorporated into Si as doping impurities during the anneal process, and the Sb doping concentration at the contact interface is found to be higher than the solid solubility limit in a Si crystal. This ohmic contacts formation method is suitable for semiconductor fabrication processes with limited thermal budget, such as post CMOS integration of MEMS.

  13. Gate-tunable high mobility remote-doped InSb/In{sub 1−x}Al{sub x}Sb quantum well heterostructures

    SciTech Connect (OSTI)

    Yi, Wei E-mail: MSokolich@hrl.com; Kiselev, Andrey A.; Thorp, Jacob; Noah, Ramsey; Nguyen, Binh-Minh; Bui, Steven; Rajavel, Rajesh D.; Hussain, Tahir; Gyure, Mark F.; Sokolich, Marko E-mail: MSokolich@hrl.com; Kratz, Philip; Qian, Qi; Manfra, Michael J.; Pribiag, Vlad S.; Kouwenhoven, Leo P.; Marcus, Charles M.

    2015-04-06

    Gate-tunable high-mobility InSb/In{sub 1−x}Al{sub x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm{sup 2}/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO{sub 2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K.

  14. Microstructural stability in LPE Ga{sub x}In{sub (1{minus}x)}As{sub y}Sb{sub (1{minus}y)}/GaSb heterostructures

    SciTech Connect (OSTI)

    Chen, C.Y.; Bucklen, V.; Rajan, K.; Freeman, M.; Cardines, R.P.

    1998-06-01

    The morphological and structural characteristics associated with the growth of lattice matched In{sub x}Ga{sub (1{minus}x)}As{sub y}Sb{sub (1{minus}y)}/GaSb (100) heterostructures is presented. The experiments focused on studying the effect of growth on vicinal surfaces tilted from the exact (100) orientation as well as variations in epilayer chemistry. It was found that variations in these process parameters had very strong effects on both the nucleation characteristics of the epilayer and the atomistic scale homogeneity of the alloy. The <100> and <110> variants in compositional modulation/phase separation were detected, as well as the evolution of weak (110) ordering. These results are discussed in the context of other studies on phase stability in III-V epitaxial structures, especially in terms of surface reconstruction and kinetic effects near conditions of spinodal decomposition.

  15. Frit Development Efforts for Sludge Batch 4 (SB4): Operating Window Assessments fo Scenarios Leading Up to the Selected Preparation Plan for SB4

    SciTech Connect (OSTI)

    Peeler, D

    2006-03-21

    The objective of this report is to document technical information that has been provided to Defense Waste Processing Facility (DWPF) and Closure Business Unit (CBU) personnel as part of the frit development support for Sludge Batch 4 (SB4). The information presented in this report includes projected operating windows (expressed in terms of waste loading) for various sludge blending and/or washing options coupled with candidate frits of interest. Although the Nominal Stage assessment serves as the primary tool for these evaluations, select systems were also evaluated using a Variation Stage assessment in which compositional variations were introduced. In addition, assessments of the impacts of nepheline formation potential and the SO{sub 4}{sup -} solubility limit on the projected operating windows are also provided. Although this information was used as part of the technical basis leading to CBU's development of the preferred SB4 preparation plan, none of the options presented in this report was selected as the preferred plan. Therefore, the information is presented without significant interpretation of the resulting operating windows, but the projected windows are provided so additional insight can be explored if desired. Detailed assessments of the projected operating windows (using both Nominal and Variation Stage assessments) of the preferred sludge preparation plan with candidate frits are to be documented elsewhere. The information provided in this report is focused solely on model-based projections of the operating windows for various SB4 blending strategies of interest. Although nepheline formation potential is monitored via model predictions as a part of this assessment, experimental work investigating the impact of nepheline on glass quality is also being addressed in a parallel study. The results of this paper study and the experimental assessments of melt rate, SO{sub 4} solubility, and/or nepheline formation potential are all critical components of the

  16. INFERENCE OF INHOMOGENEOUS CLOUDS IN AN EXOPLANET ATMOSPHERE

    SciTech Connect (OSTI)

    Demory, Brice-Olivier; De Wit, Julien; Lewis, Nikole; Zsom, Andras; Seager, Sara; Fortney, Jonathan; Knutson, Heather; Desert, Jean-Michel; Heng, Kevin; Madhusudhan, Nikku; Gillon, Michael; Barclay, Thomas; Cowan, Nicolas B.

    2013-10-20

    We present new visible and infrared observations of the hot Jupiter Kepler-7b to determine its atmospheric properties. Our analysis allows us to (1) refine Kepler-7b's relatively large geometric albedo of Ag = 0.35 0.02, (2) place upper limits on Kepler-7b thermal emission that remains undetected in both Spitzer bandpasses and (3) report a westward shift in the Kepler optical phase curve. We argue that Kepler-7b's visible flux cannot be due to thermal emission or Rayleigh scattering from H{sub 2} molecules. We therefore conclude that high altitude, optically reflective clouds located west from the substellar point are present in its atmosphere. We find that a silicate-based cloud composition is a possible candidate. Kepler-7b exhibits several properties that may make it particularly amenable to cloud formation in its upper atmosphere. These include a hot deep atmosphere that avoids a cloud cold trap, very low surface gravity to suppress cloud sedimentation, and a planetary equilibrium temperature in a range that allows for silicate clouds to potentially form in the visible atmosphere probed by Kepler. Our analysis does not only present evidence of optically thick clouds on Kepler-7b but also yields the first map of clouds in an exoplanet atmosphere.

  17. Structural phase transition and phonon instabilities in Cu12Sb4S13

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    May, Andrew F.; Delaire, Olivier A.; Niedziela, Jennifer L.; Lara-Curzio, Edgar; Susner, Michael A.; Abernathy, Douglas L.; Kirkham, Melanie J.; McGuire, Michael A.

    2016-02-08

    In this study, a structural phase transition has been discovered in the synthetic tetrahedrite Cu12Sb4S13 at approximately 88 K. Upon cooling, the material transforms from its known cubic symmetry to a tetragonal unit cell that is characterized by an in-plane ordering that leads to a doubling of the unit cell volume. Specific heat capacity measurements demonstrate a hysteresis of more than two degrees in the associated anomaly. A similar hysteresis was observed in powder x-ray diffraction measurements, which also indicate a coexistence of the two phases, and together these results suggest a first-order transition. This structural transition coincides with amore » recently-reported metal-insulator transition, and the structural instability is related to the very low thermal conductivity κ in these materials. Inelastic neutron scattering was used to measure the phonon density of states in Cu12Sb4S13 and Cu10Zn2Sb4S13, both of which possess a localized, low-energy phonon mode associated with strongly anharmonic copper displacements that suppress κ. In Cu12Sb4S13, signatures of the phase transition are observed in the temperature dependence of the localized mode, which disappears at the structural transition. In contrast, in the cubic Zn-doped material, the mode is at slightly higher-energy but observable for all temperatures, though it softens upon cooling.« less

  18. The radiation chemistry of Cs-7SB, a solvent modifier used in Cs and Sr extraction

    SciTech Connect (OSTI)

    Mincher, B.J.; Martin, L.R.; Elias, G.; Mezyk, S.P.

    2008-07-01

    The solvent modifier 1-(2,2,3,3-tetrafluoro-propoxy)-3-(4-sec-butylphenoxy)-2-propanol, (Cs- 7SB) is used in conjunction with calixarenes and crown ethers dissolved in alkane diluents for the extraction of Cs and Sr from highly radioactive solutions. Its purpose is to solvate the ligands and the resulting ligand-metal complexes in the organic phase. Given this role, and its relatively high concentration in the formulations used for solvent extraction, radiolytic degradation of Cs-7SB might decrease the extraction efficiency of these elements as the solvent accumulates absorbed radiation dose. This work presents the results of studies of Cs-7SB using post-radiolysis gas chromatography with electron-capture detection and solvent-extraction distribution-ratio measurements. Also presented is the kinetic analysis of the bimolecular rate constant for the modifier's reaction with nitrogen trioxide and nitrogen dioxide radicals, major radiolytically-produced radical species in irradiated aqueous nitric acid. Although Cs-7SB was found to undergo reactions with nitrogen-centered radicals, little decrease in extraction efficiency was found. It is concluded the modifier, always present at concentrations much higher than the ligands, acts as a radical scavenger, protecting ligands from radiolytic attack. (authors)

  19. Performance Study of K2CsSb Photocathode inside a DC High Voltage Gun

    SciTech Connect (OSTI)

    T. Rao, J. Smedley, J.M. Grames, R. Mammei, J.L. McCarter, M. Poelker, R. Suleiman

    2011-03-01

    In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K2CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the GaAs:Cs in RF injector and the K2CsSb cathode in the DC gun in order to widen our choices. Since the multialkali cathode is a compound with uniform stochiometry over its entire thickness, we anticipate that the life time issues seen in GaAs:Cs due surface damage by ion bombardment would be minimized with this material. Hence successful operation of the K2CsSb cathode in DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of K2CsSb cathode in a DC gun, we have designed and built a load lock system that would allow the fabrication of the cathode at BNL and its testing at JLab. In this paper, we will present the design of the load-lock system, cathode fabrication, and the cathode performance in the preparation chamber and in the DC gun.

  20. Thermoelectric properties of AgSbTe₂ from first-principles calculations

    SciTech Connect (OSTI)

    Rezaei, Nafiseh; Akbarzadeh, Hadi; Hashemifar, S. Javad

    2014-09-14

    The structural, electronic, and transport properties of AgSbTe₂ are studied by using full-relativistic first-principles electronic structure calculation and semiclassical description of transport parameters. The results indicate that, within various exchange-correlation functionals, the cubic Fd3⁻m and trigonal R3⁻m structures of AgSbTe₂ are more stable than two other considered structures. The computed Seebeck coefficients at different values of the band gap and carrier concentration are accurately compared with the available experimental data to speculate a band gap of about 0.1–0.35 eV for AgSbTe₂ compound, in agreement with our calculated electronic structure within the hybrid HSE (Heyd-Scuseria-Ernzerhof) functional. By calculating the semiclassical Seebeck coefficient, electrical conductivity, and electronic part of thermal conductivity, we present the theoretical upper limit of the thermoelectric figure of merit of AgSbTe₂ as a function of temperature and carrier concentration.

  1. Structural phase transition and phonon instability in Cu12Sb4S13

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    May, Andrew F.; Delaire, Olivier A.; Niedziela, Jennifer L.; Lara-Curzio, Edgar; Susner, Michael A.; Abernathy, Douglas L.; Kirkham, Melanie J.; McGuire, Michael A.

    2016-02-08

    In this study, a structural phase transition has been discovered in the synthetic tetrahedrite Cu12Sb4S13 at approximately 88 K. Upon cooling, the material transforms from its known cubic symmetry to a tetragonal unit cell that is characterized by an in-plane ordering that leads to a doubling of the unit cell volume. Specific heat capacity measurements demonstrate a hysteresis of more than two degrees in the associated anomaly. A similar hysteresis was observed in powder x-ray diffraction measurements, which also indicate a coexistence of the two phases, and together these results suggest a first-order transition. This structural transition coincides with amore » recently-reported metal-insulator transition, and the structural instability is related to the very low thermal conductivity κ in these materials. Inelastic neutron scattering was used to measure the phonon density of states in Cu12Sb4S13 and Cu10Zn2Sb4S13, both of which possess a localized, low-energy phonon mode associated with strongly anharmonic copper displacements that suppress κ. In Cu12Sb4S13, signatures of the phase transition are observed in the temperature dependence of the localized mode, which disappears at the structural transition. In contrast, in the cubic Zn-doped material, the mode is at slightly higher-energy but observable for all temperatures, though it softens upon cooling.« less

  2. Rashba effect in single-layer antimony telluroiodide SbTeI

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhuang, Houlong L.; Cooper, Valentino R.; Xu, Haixuan; Ganesh, P.; Hennig, Richard G.; Kent, P. R. C.

    2015-09-04

    Exploring spin-orbit coupling (SOC) in single-layer materials is important for potential spintronics applications. In this paper, using first-principles calculations, we show that single-layer antimony telluroiodide SbTeI behaves as a two-dimensional semiconductor exhibiting a G0W0 band gap of 1.82 eV. More importantly, we observe the Rashba spin splitting in the SOC band structure of single-layer SbTeI with a sizable Rashba coupling parameter of 1.39 eV Å, which is significantly larger than that of a number of two-dimensional systems including surfaces and interfaces. The low formation energy and real phonon modes of single-layer SbTeI imply that it is stable. Finally, our studymore » suggests that single-layer SbTeI is a candidate single-layer material for applications in spintronics devices.« less

  3. High resolution InSb quantum well ballistic nanosensors for room temperature applications

    SciTech Connect (OSTI)

    Gilbertson, Adam; Cohen, L. F.; Lambert, C. J.; Solin, S. A.

    2013-12-04

    We report the room temperature operation of a quasi-ballistic InSb quantum well Hall sensor that exhibits a high frequency sensitivity of 560nT/?Hz at 20uA bias current. The device utilizes a partitioned buffer layer design that suppresses leakage currents through the mesa floor and can sustain large current densities.

  4. Fiber optic coupled optical sensor

    DOE Patents [OSTI]

    Fleming, Kevin J. (Albuquerque, NM)

    2001-01-01

    A displacement sensor includes a first optical fiber for radiating light to a target, and a second optical fiber for receiving light from the target. The end of the first fiber is adjacent and not axially aligned with the second fiber end. A lens focuses light from the first fiber onto the target and light from the target onto the second fiber.

  5. TANK 40 FINAL SB5 CHEMICAL CHARACTERIZATION RESULTS PRIOR TO NP ADDITION

    SciTech Connect (OSTI)

    Bannochie, C.; Click, D.

    2010-01-06

    A sample of Sludge Batch 5 (SB5) was pulled from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). This sample was also analyzed for chemical composition including noble metals. Prior to radionuclide inventory analyses, a final sample of the H-canyon Np stream will be added to bound the Np addition anticipated for Tank 40. These analyses along with the WAPS radionuclide analyses will help define the composition of the sludge in Tank 40 that is currently being fed to DWPF as SB5. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB5 sample was transferred from the shipping container into a 4-L high density polyethylene vessel and solids allowed to settle overnight. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 239 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon{reg_sign} vessels and four in Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Due to the use of Zr crucibles and Na in the peroxide fusions, Na and Zr cannot be determined from this preparation. Additionally, other alkali metals, such as Li and K that may be contaminants in the Na{sub 2}O{sub 2} are not determined from this preparation. Three Analytical Reference Glass - 14 (ARG-1) standards were digested along with a blank for each preparation. The ARG-1 glass allows for an assessment of the completeness of each digestion. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma - atomic emission spectroscopy (ICPAES) analysis, inductively coupled plasma - mass spectrometry (ICP-MS) analysis of masses 81-209 and 230

  6. Molecular Beam Epitaxy on Gas Cluster Ion Beam Prepared GaSb Substrates: Towards Improved Surfaces and Interfaces

    SciTech Connect (OSTI)

    Krishnaswami, Kannan; Vangala, Shivashankar R.; Dauplaise, Helen; Allen, Lisa; Dallas, Gordon; Bakken, Daniel; Bliss, David; Goodhue, William

    2008-04-01

    A key problem in producing mid-infrared optoelectronic and low-power electronic devices in the GaSb material system is the lack of substrates with appropriate surfaces for epitaxial growth. Chemical mechanical polishing (CMP) of GaSb results in surface damage accompanied by tenacious oxides that do not easily desorb. To overcome this, we have developed a process using gas cluster ion beams (GCIB) to remove surface damage and produce engineered surface oxides. In this paper, we present surface modification results on GaSb substrates using O2-, CF4/O2-, and HBr-GCIB processes. X-ray photoelectron spectroscopy of GCIB produced surface layers showed the presence of mixed Ga- and Sb-oxides, with mostly Ga-oxides at the interface, desorbing at temperatures ranging 530°C to 560°C. Cross-sectional transmission electron microscopy of molecular beam epitaxy grown GaSb/AlGaSb layers showed that GCIB surfaces yielded smooth defect free substrate to epi transitions as compared to CMP surfaces. Furthermore, HBr-GCIB surfaces exhibited neither dislocation layers nor discernable interfaces, indicating complete oxide desorbtion prior to epigrowth on a clean single crystal template. Atomic force microscopy of GCIB epilayers exhibited smooth surfaces with characteristic step-terrace formations comprising monatomic steps and wide terraces. The HBr-GCIB process can be easily adapted to a large scale manufacturing process for epi-ready GaSb.

  7. Direct Evidence for Abrupt Postcrystallization Germanium Precipitation in Thin Phase-Change Films of Sb-15 at. % Ge

    SciTech Connect (OSTI)

    Cabral,C.; Krusin-Elbaum, L.; Bruley, J.; Raoux, S.; Deline, V.; Madan, A.; Pinto, T.

    2008-01-01

    We present evidence for the instability in the crystalline (metallic) state of binary Te-free phase-change Ge-Sb thin films considered for integration into nonvolatile nanosized memory cells. We find that while the amorphous (semiconducting) phase of eutectic Sb-15 at. % Ge is very robust until Sb crystallization at 240 C, at about 350 C, germanium rapidly precipitates out. Ge precipitation, visualized directly with transmission electron microscopy, is exothermic and is found to affect the films' reflectivity, resistance, and stress. It converts melting into a two-step process, which may seriously impact the switching reliability of a device.

  8. Atmospheric pressure helium afterglow discharge detector for gas chromatography

    DOE Patents [OSTI]

    Rice, Gary; D'Silva, Arthur P.; Fassel, Velmer A.

    1986-05-06

    An apparatus for providing a simple, low-frequency electrodeless discharge system for atmospheric pressure afterglow generation. A single quartz tube through which a gas mixture is passed is extended beyond a concentric electrode positioned thereabout. A grounding rod is placed directly above the tube outlet to permit optical viewing of the discharge between the electrodes.

  9. Atmospheric pressure helium afterglow discharge detector for gas chromatography

    DOE Patents [OSTI]

    Rice, G.; D'Silva, A.P.; Fassel, V.A.

    1985-04-05

    An apparatus for providing a simple, low-frequency, electrodeless discharge system for atmospheric pressure afterglow generation. A single quartz tube through which a gas mixture is passed is extended beyond a concentric electrode positioned thereabout. A grounding rod is placed directly above the tube outlet to permit optical viewing of the discharge between the electrodes.

  10. Electronically- and crystal-structure-driven magnetic structures and physical properties of RScSb (R = rare earth) compounds. A neutron diffraction, magnetization and heat capacity study

    SciTech Connect (OSTI)

    Ritter, C; Dhar, S K; Kulkarni, R; Provino, A; Paudyal, Durga; Manfrinetti, Pietro; Gschneidner, Karl A

    2014-08-14

    The synthesis of the new equiatomic RScSb ( R = La-Nd, Sm, Gd-Tm, Lu, Y) compounds has been recently reported. These rare earth compounds crystallize in two different crystal structures, adopting the CeScSi-type ( I 4/ mmm) for the lighter R (La-Nd, Sm) and the CeFeSi-type (P4 /nmm) structure for the heavier R ( R = Gd-Tm, Lu, Y). Here we report the results of neutron diffraction, magnetization and heat capacity measurements on some of these compounds ( R = Ce, Pr, Nd, Gd and Tb). Band structure calculations have also been performed on CeScSb and GdScGe (CeScSi-type), and on GdScSb and TbScSb (CeFeSi-type) to compare and understand the exchange interactions in CeScSi and CeFeSi structure types. The neutron diffraction investigation shows that all five compounds order magnetically, with the highest transition temperature of 66 K in TbScSb and the lowest of about 9 K in CeScSb. The magnetic ground state is simple ferromagnetic (τ = [0 0 0]) in CeScSb, as well in NdScSb for 32 >T > 22 K. Below 22 K a second magnetic transition, with propagation vector τ = [¼ ¼ 0], appears in NdScSb. PrScSb has a magnetic structure within, determined by mostly ferromagnetic interactions and antiferromagnetic alignment of the Pr-sites connected through the I-centering ( τ = [1 0 0]). A cycloidal spiral structure with a temperature dependent propagation vector τ = [δ δ ½] is found in TbScSb. The results of magnetization and heat capacity lend support to the main conclusions derived from neutron diffraction. As inferred from a sharp peak in magnetization, GdScSb orders antiferromagnetically at 56 K. First principles calculations show lateral shift of spin split bands towards lower energy from the Fermi level as the CeScSi-type structure changes to the CeFeSi-type structure. This rigid shift may force the system to transform from exchange split ferromagnetic state to the antiferromagnetic state in RScSb compounds (as seen for example in GdScSb and TbScSb) and is proposed to

  11. Carrier localization and in-situ annealing effect on quaternary Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaAs quantum wells grown by Sb pre-deposition

    SciTech Connect (OSTI)

    Thoma, Jiri; Huyet, Guillaume; Tyndall National Institute, UCC, Lee Maltings, Cork ; Liang, Baolai; Huffaker, Diana L.; Lewis, Liam; Hegarty, Stephen P.

    2013-03-18

    Using temperature-dependent photoluminescence spectroscopy, we have investigated and compared intrinsic InGaAs, intrinsic GaInAsSb, and p-i-n junction GaInAsSb quantum wells (QWs) embedded in GaAs barriers. Strong carrier localization inside the intrinsic GaInAsSb/GaAs QW has been observed together with its decrease inside the p-i-n sample. This is attributed to the effect of an in-situ annealing during the top p-doped AlGaAs layer growth at an elevated temperature of 580 Degree-Sign C, leading to Sb-atom diffusion and even atomic redistribution. High-resolution X-ray diffraction measurements and the decrease of both maximum localization energy and full delocalization temperature in the p-i-n QW sample further corroborated this conclusion.

  12. Temperature-dependent structural property and power factor of n type thermoelectric Bi{sub 0.90}Sb{sub 0.10} and Bi{sub 0.86}Sb{sub 0.14} alloys

    SciTech Connect (OSTI)

    Malik, K.; Das, Diptasikha; Bandyopadhyay, S.; Banerjee, Aritra; Center for Research in Nanoscience and Nanotechnology, University of Calcutta, JD-2, Sector-III, Saltlake City, Kolkata 700 098 ; Mandal, P.; Srihari, Velaga

    2013-12-09

    Thermal variation of structural property, linear thermal expansion coefficient (?), resistivity (?), thermopower (S), and power factor (PF) of polycrystalline Bi{sub 1-x}Sb{sub x} (x?=?0.10 and 0.14) samples are reported. Temperature-dependent powder diffraction experiments indicate that samples do not undergo any structural phase transition. Rietveld refinement technique has been used to perform detailed structural analysis. Temperature dependence of ? is found to be stronger for Bi{sub 0.90}Sb{sub 0.10}. Also, PF for direct band gap Bi{sub 0.90}Sb{sub 0.10} is higher as compared to that for indirect band gap Bi{sub 0.86}Sb{sub 0.14}. Role of electron-electron and electron-phonon scattering on ?, S, and PF has been discussed.

  13. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography

    SciTech Connect (OSTI)

    Jha, Smita; Liu, C.-C.; Nealey, P. F.; Kuech, T. F.; Kuan, T. S.; Babcock, S. E.; Park, J. H.; Mawst, L. J.

    2009-08-10

    Defect reduction in the large lattice mismatched system of GaSb on GaAs, {approx}7%, was accomplished using full wafer block copolymer (BCP) lithography. A self-assembled BCP mask layer was used to generate a hexagonal pattern of {approx}20 nm holes on {approx}40 nm centers in a 20 nm SiO{sub 2} layer. GaSb growth initially takes place selectively within these holes leading to a dense array of small, strain-relaxed epitaxial GaSb islands. The GaSb grown on the patterned SiO{sub 2} layer exhibits a reduction in the x-ray linewidth attributed to a decrease in the threading dislocation density when compared to blanket pseudomorphic film growth.

  14. Characterization of silver photodiffusion in Ge{sub 8}Sb{sub 2}Te{sub 11} thin films

    SciTech Connect (OSTI)

    Kumar, Sandeep; Singh, D.; Sandhu, S.; Thangaraj, R.

    2015-06-24

    Silver-doped amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films have been prepared by photodiffusion at room-temperature; the Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer was deposited by vacuum thermal evaporation. Photodiffusion of Ag into the amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films has been carried out by illuminating the prepared Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer with halogen lamp. The photodiffused silver depth profile was traced by means of time of flight secondary ion mass spectroscopy. The film remains amorphous after Ag photodiffusion. The crystallization temperature of the films was evaluated by temperature dependent sheet resistance measurement. The amorphous nature and crystalline phases of the films have been identified by using X-ray diffraction.

  15. Effect of rare-earth doping in RCrSb3 (R = La, Pr, Sm, and Gd...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Effect of rare-earth doping in RCrSb3 (R La, Pr, Sm, and Gd) Citation Details In-Document Search ... We report on the electrical resistivity and magnetic ...

  16. Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

    SciTech Connect (OSTI)

    Bremner, S. P.; Ban, K.-Y.; Faleev, N. N.; Honsberg, C. B.; Smith, D. J.

    2013-09-14

    We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

  17. The reaction mechanism of FeSb2 as anode for sodium-ion batteries

    SciTech Connect (OSTI)

    Baggetto, Loic; Hah, Hien-Yoong; Charles E. Johnson; Bridges, Craig A.; Johnson, Jackie A.; Veith, Gabriel M.

    2014-04-04

    The electrochemical reaction of FeSb2 with Na is reported for the first time. The first discharge (sodiation) potential profile of FeSb2 is characterized by a gentle slope centered at 0.25 V. During charge (Na removal) and the subsequent discharge, the main reaction takes place near 0.7 V and 0.4 V, respectively. The reversible storage capacity amounts to 360 mA h g-1, which is smaller than the theoretical value of 537 mA h g-1. The reaction, studied by ex situ and in situ X-ray diffraction, is found to proceed by the consumption of crystalline FeSb2 to form an amorphous phase. Upon further sodiation, the formation of nanocrystalline Na3Sb domains is evidenced. During desodiation, Na3Sb domains convert into an amorphous phase. The chemical environment of Fe, probed by 57Fe Mo ssbauer spectroscopy, undergoes significant changes during the reaction. During sodiation, the well-resolved doublet of FeSb2 with an isomer shift around 0.45 mm s-1 and a quadrupole splitting of 1.26 mm s-1 is gradually converted into a doublet line centered at about 0.15 mm s1 along with a singlet line around 0 mm s-1. The former signal results from the formation of a Fe-rich FexSb alloy with an estimated composition of Fe4Sb while the latter signal corresponds to superparamagnetic Fe due to the formation of nanosized pure Fe domains. Interestingly the signal of Fe4Sb remains unaltered during desodiation. This mechanism is substantially different than that observed during the reaction with Li. The irreversible formation of a Fe-rich Fe4Sb alloy and the absence of full desodiation of Sb domains explain the lower than theoretical practical storage capacity.

  18. Anthropogenic NO2 in the Atmosphere: Estimates of the Column Content and Radiative Forcing

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Anthropogenic NO 2 in the Atmosphere: Estimates of the Column Content and Radiative Forcing A. N. Rublev Institution of Molecular Physics Russian Research Center Kurchatov Institute Moscow, Russia N Chubarova Meteorological Observatory of Moscow State University Moscow, Russia G. Gorchakov Obukhov Institute of Atmospheric Physics Russian Academy of Sciences Moscow, Russia Introduction The work summarizes the different methodical aspects, firstly, the use of atmosphere optical depths presented in

  19. Optical coupler

    DOE Patents [OSTI]

    Majewski, Stanislaw; Weisenberger, Andrew G.

    2004-06-15

    In a camera or similar radiation sensitive device comprising a pixilated scintillation layer, a light guide and an array of position sensitive photomultiplier tubes, wherein there exists so-called dead space between adjacent photomultiplier tubes the improvement comprising a two part light guide comprising a first planar light spreading layer or portion having a first surface that addresses the scintillation layer and optically coupled thereto at a second surface that addresses the photomultiplier tubes, a second layer or portion comprising an array of trapezoidal light collectors defining gaps that span said dead space and are individually optically coupled to individual position sensitive photomultiplier tubes. According to a preferred embodiment, coupling of the trapezoidal light collectors to the position sensitive photomultiplier tubes is accomplished using an optical grease having about the same refractive index as the material of construction of the two part light guide.

  20. Optical memory

    DOE Patents [OSTI]

    Mao, Samuel S; Zhang, Yanfeng

    2013-07-02

    Optical memory comprising: a semiconductor wire, a first electrode, a second electrode, a light source, a means for producing a first voltage at the first electrode, a means for producing a second voltage at the second electrode, and a means for determining the presence of an electrical voltage across the first electrode and the second electrode exceeding a predefined voltage. The first voltage, preferably less than 0 volts, different from said second voltage. The semiconductor wire is optically transparent and has a bandgap less than the energy produced by the light source. The light source is optically connected to the semiconductor wire. The first electrode and the second electrode are electrically insulated from each other and said semiconductor wire.

  1. Differential atmospheric tritium sampler

    DOE Patents [OSTI]

    Griesbach, Otto A.; Stencel, Joseph R.

    1990-01-01

    An atmospheric tritium sampler is provided which uses a carrier gas comprised of hydrogen gas and a diluting gas, mixed in a nonexplosive concentration. Sample air and carrier gas are drawn into and mixed in a manifold. A regulator meters the carrier gas flow to the manifold. The air sample/carrier gas mixture is pulled through a first moisture trap which adsorbs water from the air sample. The mixture then passes through a combustion chamber where hydrogen gas in the form of H.sub.2 or HT is combusted into water. The manufactured water is transported by the air stream to a second moisture trap where it is adsorbed. The air is then discharged back into the atmosphere by means of a pump.

  2. Differential atmospheric tritium sampler

    DOE Patents [OSTI]

    Griesbach, O.A.; Stencel, J.R.

    1987-10-02

    An atmospheric tritium sampler is provided which uses a carrier gas comprised of hydrogen gas and a diluting gas, mixed in a nonexplosive concentration. Sample air and carrier gas are drawn into and mixed in a manifold. A regulator meters the carrier gas flow to the manifold. The air sample/carrier gas mixture is pulled through a first moisture trap which adsorbs water from the air sample. The moisture then passes through a combustion chamber where hydrogen gas in the form of H/sub 2/ or HT is combusted into water. The manufactured water is transported by the air stream to a second moisture trap where it is adsorbed. The air is then discharged back into the atmosphere by means of a pump.

  3. Posters Ship-Based Measurements of Cloud Optical Properties

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    7 Posters Ship-Based Measurements of Cloud Optical Properties During the Atlantic Stratocumulus Transition Experiment A. B. White Cooperative Institute for Research in Environmental Sciences University of Colorado at Boulder National Oceanic and Atmospheric Administration Boulder, Colorado C. W. Fairall National Oceanic and Atmospheric Administration Environmental Research Laboratories Environmental Technology Laboratory Boulder, Colorado Introduction The Atlantic Stratocumulus Transition

  4. Optical switch

    DOE Patents [OSTI]

    Reedy, Robert P.

    1987-01-01

    An optical switching device (10) is provided whereby light from a first glass fiber (16) or a second glass fiber (14) may be selectively transmitted into a third glass fiber (18). Each glass fiber is provided with a focusing and collimating lens system (26, 28, 30). In one mode of operation, light from the first glass fiber (16) is reflected by a planar mirror (36) into the third glass fiber (18). In another mode of operation, light from the second glass fiber (14) passes directly into the third glass fiber (18). The planar mirror (36) is attached to a rotatable table (32) which is rotated to provide the optical switching.

  5. Optical switch

    DOE Patents [OSTI]

    Reedy, R.P.

    1987-11-10

    An optical switching device is provided whereby light from a first glass fiber or a second glass fiber may be selectively transmitted into a third glass fiber. Each glass fiber is provided with a focusing and collimating lens system. In one mode of operation, light from the first glass fiber is reflected by a planar mirror into the third glass fiber. In another mode of operation, light from the second glass fiber passes directly into the third glass fiber. The planar mirror is attached to a rotatable table which is rotated to provide the optical switching. 3 figs.

  6. Doping Effects on the Thermoelectric Properties of Cu3SbSe4

    SciTech Connect (OSTI)

    Skoug, Eric; Cain, Jeffrey D.; Morelli, Donald; Majsztrik, Paul W; Kirkham, Melanie J; Lara-Curzio, Edgar

    2011-01-01

    We present the first systematic doping study on the ternary semiconductor Cu3SbSe 4 . We have developed a novel synthesis procedure that produces high-quality polycrystalline samples with hole concentrations an order of magnitude lower than have been reported for the undoped compound. The hole concentration can be increased by adding small amounts of either Ge or Sn on the Sb site. The power factor increases with increasing doping, reaching a maximum value of 16 W/cmK^2 . The thermoelectric properties are optimized for the 2% Sn doped compound which has ZT=0.72 at 630K, rivaling that of state-of-the-art thermoelectric materials in this temperature range.

  7. Structural stability and electronic properties of InSb nanowires: A first-principles study

    SciTech Connect (OSTI)

    Zhang, Yong; Tang, Li-Ming Ning, Feng; Chen, Ke-Qiu; Wang, Dan

    2015-03-28

    Using first-principles calculations, we investigate the structural stability and electronic properties of InSb nanowires (NWs). The results show that, in contrast to the bulk InSb phase, wurtzite (WZ) NWs are more stable than zinc-blende (ZB) NWs when the NW diameter is smaller than 10 nm. Nonpassivated ZB and WZ NWs are found to be metallic and semiconducting, respectively. After passivation, both ZB and WZ NWs exhibit direct-gap semiconductor character, and the band gap magnitude of the NWs strongly depends on the suppression of surface states by the charge-compensation ability of foreign atoms to surface atoms. Moreover, the carrier mobility of the NW can be strengthened by halogen passivation.

  8. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    SciTech Connect (OSTI)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-03-22

    The stability of the crystalline phase of binary phase-change Ge{sub x}Sb{sub 1-x} films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T{sub Ge}{sup p} to the rate of change dT{sub cryst}/dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T{sub cryst} is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  9. Funding Opportunity Announcement: Solar Bankability Data to Advance Transactions and Access (SB-DATA)

    Broader source: Energy.gov [DOE]

    The Solar Bankability Data to Advance Transactions and Access (SB-DATA) funding program targets soft cost reduction by increasing data accessibility and quality. It will facilitate the growth and expansion of the solar industry by creating a standardized data landscape for distributed solar. As the solar market continues to rapidly grow, it’s critical that the collection, management, and exchange of solar datasets across the value chain – especially those that affect the bankability of solar assets – are coordinated and streamlined to protect consumers, increase efficient pricing, and support new and existing businesses entering the solar marketplace. The goal of SB-DATA is to support the creation and adoption of industry-led open data standards for rapid and seamless data exchange across the value chain from origination to decommissioning.

  10. Two-dimensional topological crystalline insulator phase in Sb/Bi planar honeycomb with tunable Dirac gap

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hsu, Chia -Hsiu; Huang, Zhi -Quan; Crisostomo, Christian P.; Yao, Liang -Zi; Chuang, Feng -Chuan; Liu, Yu -Tzu; Wang, Baokai; Hsu, Chuang -Han; Lee, Chi -Cheng; Lin, Hsin; et al

    2016-01-14

    We predict planar Sb/Bi honeycomb to harbor a two-dimensional (2D) topological crystalline insulator (TCI) phase based on first-principles computations. Although buckled Sb and Bi honeycombs support 2D topological insulator (TI) phases, their structure becomes planar under tensile strain. The planar Sb/Bi honeycomb structure restores the mirror symmetry, and is shown to exhibit non-zero mirror Chern numbers, indicating that the system can host topologically protected edge states. Our computations show that the electronic spectrum of a planar Sb/Bi nanoribbon with armchair or zigzag edges contains two Dirac cones within the band gap and an even number of edge bands crossing themore » Fermi level. Lattice constant of the planar Sb honeycomb is found to nearly match that of hexagonal-BN. As a result, the Sb nanoribbon on hexagonal-BN exhibits gapped edge states, which we show to be tunable by an out-of the-plane electric field, providing controllable gating of edge state important for device applications.« less

  11. Time-course analysis of the Shewanella amazonensis SB2B proteome in response to sodium chloride shock

    SciTech Connect (OSTI)

    Parnell, John J.; Callister, Stephen J.; Rompato, Giovanni; Nicora, Carrie D.; Pasa-Tolic, Ljiljana; Williamson, Ashley; Pfrender, Michael E.

    2011-06-29

    Organisms in the genus Shewanella have become models for response to environmental stress. One of the most important environmental stresses is change in osmolarity. In this study, we experimentally determine the response mechanisms of Shewanella amazonensis SB2B during osmotic stress. Osmotic stress in SB2B was induced through exposure to NaCl, and the time-course proteomics response was measured using liquid chromatography mass spectrometry. Protein trends were qualitatively compared to gene expression trends and to phenotypic characterization. Osmotic stress affects motility, and has also been associated with a change in the membrane fatty acid composition (due to induction of branched chain amino acid degradation pathways); however, we show this is not the case for SB2B. Although proteins and genes involved with branched chain amino acid degradation are induced, fatty acid degradation pathways are not induced and no change in the fatty acid profile occurs in SB2B as a result of osmotic shock. The most extensive response of SB2B over the time course of acclimation to high salt involves an orchestrated sequence of events comprising increased expression of signal transduction associated with motility and restricted cell division and DNA replication. After SB2B has switched to increased branched chain amino acid degradation, motility, and cellular replication proteins return to pre-perturbed levels.

  12. Light self-focusing in the atmosphere: Thin window model

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Vaseva, Irina A.; Fedoruk, Mikhail P.; Rubenchik, Alexander M.; Turitsyn, Sergei K.

    2016-08-02

    Ultra-high power (exceeding the self-focusing threshold by more than three orders of magnitude) light beams from ground-based laser systems may find applications in space-debris cleaning. The propagation of such powerful laser beams through the atmosphere reveals many novel interesting features compared to traditional light self-focusing. It is demonstrated here that for the relevant laser parameters, when the thickness of the atmosphere is much shorter than the focusing length (that is, of the orbit scale), the beam transit through the atmosphere in lowest order produces phase distortion only. This means that by using adaptive optics it may be possible to eliminatemore » the impact of self-focusing in the atmosphere on the laser beam. Furthermore, the area of applicability of the proposed “thin window” model is broader than the specific physical problem considered here. For instance, it might find applications in femtosecond laser material processing.« less

  13. Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    SciTech Connect (OSTI)

    Lu, Q.; Zhuang, Q.; Hayton, J.; Yin, M.; Krier, A.

    2014-07-21

    There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1??m have been demonstrated and characterized. The gain was determined to be 2.9?cm{sup ?1} per QD layer, and the waveguide loss was ?15?cm{sup ?1} at 4?K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T{sub 0}?=?101?K below 50?K, but decreased to 48?K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs{sub 0.61}Sb{sub 0.13}P{sub 0.26} lower cladding layer and an upper n{sup +} InAs plasmon cladding layer which resulted in a maximum operating temperature (T{sub max}) of 120?K in pulsed mode, which is the highest reported to date.

  14. Adaptive optics and laser guide stars at Lick observatory

    SciTech Connect (OSTI)

    Brase, J.M.

    1994-11-15

    For the past several years LLNL has been developing adaptive optics systems for correction of both atmospheric turbulence effects and thermal distortions in optics for high-power lasers. Our early work focused on adaptive optics for beam control in laser isotope separation and ground-based free electron lasers. We are currently developing innovative adaptive optics and laser systems for sodium laser guide star applications at the University of California`s Lick and Keck Observeratories. This talk will describe our adaptive optics technology and some of its applications in high-resolution imaging and beam control.

  15. Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

    SciTech Connect (OSTI)

    Yokoyama, Masafumi Takenaka, Mitsuru; Takagi, Shinichi; Yokoyama, Haruki

    2015-02-16

    We have realized ultrathin body GaSb-on-insulator (GaSb-OI) on Si wafers by direct wafer bonding technology using atomic-layer deposition (ALD) Al{sub 2}O{sub 3} and have demonstrated GaSb-OI p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si. A 23-nm-thick GaSb-OI p-MOSFET exhibits the peak effective mobility of ∼76 cm{sup 2}/V s. We have found that the effective hole mobility of the thin-body GaSb-OI p-MOSFETs decreases with a decrease in the GaSb-OI thickness or with an increase in Al{sub 2}O{sub 3} ALD temperature. The InAs passivation of GaSb-OI MOS interfaces can enhance the peak effective mobility up to 159 cm{sup 2}/V s for GaSb-OI p-MOSFETs with the 20-nm-thick GaSb layer.

  16. Using galvanostatic electroforming of Bi1–xSbx nanowires to control composition, crystallinity, and orientation

    SciTech Connect (OSTI)

    Limmer, Steven J.; Medlin, Douglas L.; Siegal, Michael P.; Hekmaty, Michelle; Lensch-Falk, Jessica L.; Erickson, Kristopher; Pillars, Jamin; Yelton, W. Graham

    2014-12-03

    When using galvanostatic pulse deposition, we studied the factors influencing the quality of electroformed Bi1–xSbx nanowires with respect to composition, crystallinity, and preferred orientation for high thermoelectric performance. Two nonaqueous baths with different Sb salts were investigated. The Sb salts used played a major role in both crystalline quality and preferred orientations. Nanowire arrays electroformed using an SbI3 -based chemistry were polycrystalline with no preferred orientation, whereas arrays electroformed from an SbCl3-based chemistry were strongly crystallographically textured with the desired trigonal orientation for optimal thermoelectric performance. From the SbCl3 bath, the electroformed nanowire arrays were optimized to have nanocompositional uniformity, with a nearly constant composition along the nanowire length. Moreover, nanowires harvested from the center of the array had an average composition of Bi0.75 Sb0.25. However, the nanowire compositions were slightly enriched in Sb in a small region near the edges of the array, with the composition approaching Bi0.70Sb0.30.

  17. Quantum Optics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Quantum Optics - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Energy Defense Waste Management Programs Advanced Nuclear

  18. Analyzing Atmospheric Neutrino Oscillations

    SciTech Connect (OSTI)

    Escamilla, J.; Ernst, D. J.; Latimer, D. C.

    2007-10-26

    We provide a pedagogic derivation of the formula needed to analyze atmospheric data and then derive, for the subset of the data that are fully-contained events, an analysis tool that is quantitative and numerically efficient. Results for the full set of neutrino oscillation data are then presented. We find the following preliminary results: 1.) the sub-dominant approximation provides reasonable values for the best fit parameters for {delta}{sub 32}, {theta}{sub 23}, and {theta}{sub 13} but does not quantitatively provide the errors for these three parameters; 2.) the size of the MSW effect is suppressed in the sub-dominant approximation; 3.) the MSW effect reduces somewhat the extracted error for {delta}{sub 32}, more so for {theta}{sub 23} and {theta}{sub 13}; 4.) atmospheric data alone constrains the allowed values of {theta}{sub 13} only in the sub-dominant approximation, the full three neutrino calculations requires CHOOZ to get a clean constraint; 5.) the linear in {theta}{sub 13} terms are not negligible; and 6.) the minimum value of {theta}{sub 13} is found to be negative, but at a statistically insignificant level.

  19. Microstructural evaluation of Sb-adjusted Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer layer systems for IR applications

    SciTech Connect (OSTI)

    Chen, E.; Paine, D.C.; Uppal, P.; Ahearn, J.S.; Nichols, K.; Charache, G.W.

    1998-06-01

    The authors report on a transmission electron microscopy (TEM) study of Sb-adjusted quaternary Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBE at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBe at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} is successively increased in a series of 125 nm thick layers. Post growth analysis using conventional bright field and weak beam dark field imaging of these buffer layers in cross-section reveals that the interface misfit dislocations are primarily of the 60{degree} type and are distributed through out the interfaces of the buffer layer. When optimized, the authors have shown, using plan view and cross-sectional TEM, that this approach can reduce the threading defect density to below the detectability limit of TEM (< 10{sup 5}/cm{sup 2}) and preserve growth surface planarity. The Sb-graded approach was used to fabricate two 2.2 {micro}m power converter structures fabricated using InGaAs grown on Sb-based buffer layers on GaAs substrates. A microstructural and electrical characterization was performed on these device structures and the results are contrasted with a sample in which InP was selected as the substrate. Microstructure, defect density and device performance in these not-yet-optimized Sb-based buffer layers compares favorably to equivalent devices fabricated using InP substrates.

  20. Fiber optic monitoring device

    DOE Patents [OSTI]

    Samborsky, James K.

    1993-01-01

    A device for the purpose of monitoring light transmissions in optical fibers comprises a fiber optic tap that optically diverts a fraction of a transmitted optical signal without disrupting the integrity of the signal. The diverted signal is carried, preferably by the fiber optic tap, to a lens or lens system that disperses the light over a solid angle that facilitates viewing. The dispersed light indicates whether or not the monitored optical fiber or system of optical fibers is currently transmitting optical information.

  1. Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Wang, Juan; Xing, Jun-Liang; Xiang, Wei; Wang, Guo-Wei; Xu, Ying-Qiang; Ren, Zheng-Wei; Niu, Zhi-Chuan

    2014-02-03

    Modulation-doped In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum-well (QW) structures were grown by molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy studies show high crystalline quality and smooth surface morphology. X-ray diffraction investigations confirm 1.94% compressive strain within In{sub 0.41}Ga{sub 0.59}Sb channel. High room temperature hole mobility with high sheet density of 1000 cm{sup 2}/Vs, 0.877??10{sup 12}/cm{sup 2}, and 965 cm{sup 2}/Vs, 1.112??10{sup 12}/cm{sup 2} were obtained with different doping concentrations. Temperature dependent Hall measurements show different scattering mechanisms on hole mobility at different temperature range. The sheet hole density keeps almost constantly from 300?K to 77?K. This study shows great potential of In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb QW for high-hole-mobility device applications.

  2. Power optics

    SciTech Connect (OSTI)

    Apollonov, V V

    2014-02-28

    By using the theory we developed in the early 1970s, a broad range of phenomena is considered for an optical surface of a solid body that is exposed to radiation arbitrarily varying in time and producing temperature fields, thermoelastic stresses and thermal deformations on the surface layer. The examination is based on the relations (which are similar to Duhamel's integral formula from the theory of heat conduction) between the quantities characterising the thermal stress state in any nonstationary regimes of energy input into a solid. A peculiar feature of the analysis of the thermal stress state in this case consists in the fact that this relation comprises time as a parameter, which in turn is a consequence of incoherence of the quasi-stationary problem of thermoelasticity. This phenomenon is particularly important for the optics of high-power, high-pulse repetition rate lasers, which are being actively developed. In the review, we have recently published in Laser Physics, the thermal stress state of a solid is analysed. In this state, time is treated as an independent variable used in differentiation. Such an approach greatly reduces the applicability of the method. The review published contains data on the use of capillary porous structures made of various materials with different degrees of the surface development. Moreover, such structures can be efficiently employed to increase the heat exchange at a temperature below the boiling point of the coolant. In the present review we discuss the dependences of the limiting laser intensities on the duration of a pulse or a pulse train, corresponding to the three stages of the state of the reflecting surface and leading to unacceptable elastic deformations of the surface, to the plastic yield of the material accompanied by the formation of residual stresses and to the melting of the surface layer. We also analyse the problem of heat exchange in the surface layer with a liquid metal coolant pumped through it. The

  3. Parallel optical sampler

    DOE Patents [OSTI]

    Tauke-Pedretti, Anna; Skogen, Erik J; Vawter, Gregory A

    2014-05-20

    An optical sampler includes a first and second 1.times.n optical beam splitters splitting an input optical sampling signal and an optical analog input signal into n parallel channels, respectively, a plurality of optical delay elements providing n parallel delayed input optical sampling signals, n photodiodes converting the n parallel optical analog input signals into n respective electrical output signals, and n optical modulators modulating the input optical sampling signal or the optical analog input signal by the respective electrical output signals, and providing n successive optical samples of the optical analog input signal. A plurality of output photodiodes and eADCs convert the n successive optical samples to n successive digital samples. The optical modulator may be a photodiode interconnected Mach-Zehnder Modulator. A method of sampling the optical analog input signal is disclosed.

  4. Dual-frequency glow discharges in atmospheric helium

    SciTech Connect (OSTI)

    Huang, Xiaojiang; Guo, Ying; Dai, Lu; Zhang, Jing; Shi, J. J.

    2015-10-15

    In this paper, the dual-frequency (DF) glow discharges in atmospheric helium were experimented by electrical and optical measurements in terms of current voltage characteristics and optical emission intensity. It is shown that the waveforms of applied voltages or discharge currents are the results of low frequency (LF) waveforms added to high frequency (HF) waveforms. The HF mainly influences discharge currents, and the LF mainly influences applied voltages. The gas temperatures of DF discharges are mainly affected by HF power rather than LF power.

  5. High thermal stability Sb{sub 3}Te-TiN{sub 2} material for phase change memory application

    SciTech Connect (OSTI)

    Ji, Xinglong; Zhou, Wangyang; Wu, Liangcai Zhu, Min; Rao, Feng; Song, Zhitang; Cao, Liangliang; Feng, Songlin

    2015-01-12

    For phase change memory (PCM) applications, it has been widely accepted that δ phase Sb-Te has fast operation speed and good phase stability. However, the fast growth crystallization mechanism will cause poor amorphous phase stability and overlarge grain size. We introduce TiN{sub 2} into δ phase Sb-Te (Sb{sub 3}Te) to enhance the amorphous thermal stability and refine the grain size. With TiN{sub 2} incorporating, the temperature for 10-year data retention increases from 79 °C to 124 °C. And the grain size decreases to dozens of nanometers scale. Based on X-ray photoelectron spectroscopy and transmission electron microscopy results, we knew that nitrogen atoms bond with titanium, forming disorder region at the grain boundary of Sb{sub 3}Te-TiN{sub 2} (STTN). Thus, STTN has a quite different crystallization mechanism from Sb{sub 3}Te. Furthermore, PCM device based on STTN can realize reversible phase change under 20 ns electrical pulse.

  6. Characterization of Cr-rich Cr-Sb multilayer films: Syntheses of a new metastable phase using modulated elemental reactants

    SciTech Connect (OSTI)

    Regus, Matthias; Mankovsky, Sergiy; Polesya, Svitlana; Kuhn, Gerhard; Ditto, Jeffrey; Schürmann, Ulrich; Jacquot, Alexandre; Bartholomé, Kilian; Näther, Christian; Winkler, Markus; König, Jan D.; Böttner, Harald; Kienle, Lorenz; Johnson, David C.; Ebert, Hubert; Bensch, Wolfgang

    2015-10-15

    The new metastable compound Cr{sub 1+x}Sb with x up to 0.6 has been prepared via a thin film approach using modulated elemental reactants and investigated by in-situ X-ray reflectivity, X-ray diffraction, differential scanning calorimetry, energy dispersive X-ray analysis as well as transmission electron microscopy and atomic force microscopy. The new Cr-rich antimonide crystallizes in a structure related to the Ni{sub 2}In-type structure, where the crystallographic position (1/3, 2/3, 3/4) is partially occupied by excess Cr. The elemental layers of the pristine material interdiffused significantly before Cr{sub 1+x}Sb crystallized. A change in the activation energy was observed for the diffusion process when crystal growth starts. First-principles electronic structure calculations provide insight into the structural stability, magnetic properties and resistivity of Cr{sub 1+x}Sb. - Graphical abstract: 1 amorphous multilayered film 2 interdiffused amorphous film 3 metastable crystalline phase 4 thermodynamic stable phase (and by-product). - Highlights: • Interdiffusion of amorphous Cr and Sb occurs before crystallization. • Crystallization of a new metastable phase Cr{sub 1.6}Sb in Ni{sub 2}In-type structure. • The new Cr-rich phase shows half-metallic behavior.

  7. Superconductivity in strong spin orbital coupling compound Sb2Se3

    SciTech Connect (OSTI)

    Kong, P. P.; Sun, F.; Xing, L. Y.; Zhu, J.; Zhang, S. J.; Li, W. M.; Liu, Q. Q.; Wang, X. C.; Feng, S. M.; Yu, X. H.; Zhu, J. L.; Yu, R. C.; Yang, W. G.; Shen, G. Y.; Zhao, Y. S.; Ahuja, R.; Mao, H. K.; Jin, C. Q.

    2014-10-20

    Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand was found to be topological trivial, but theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial state. We report on the discovery of superconductivity in Sb2Se3 single crystal induced via pressure. Our experiments indicated that Sb2Se3 became superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition at ~3 GPa which should be related to the topological quantum transition. The superconducting transition temperature (TC) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. As a result, high pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of TC slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.

  8. Unusual magnetic hysteresis and the weakened transition behavior induced by Sn substitution in Mn{sub 3}SbN

    SciTech Connect (OSTI)

    Sun, Ying, E-mail: sunying@buaa.edu.cn [Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191 (China); International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Guo, Yanfeng; Li, Jun; Wang, Xia [Superconducting Properties Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Tsujimoto, Yoshihiro [Materials Processing Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Wang, Cong [Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191 (China); Feng, Hai L.; Sathish, Clastin I.; Yamaura, Kazunari, E-mail: yamaura.kazunari@nims.go.jp [Superconducting Properties Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Matsushita, Yoshitaka [Analysis Station, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-01-28

    Substitution of Sb with Sn was achieved in ferrimagnetic antiperovskite Mn{sub 3}SbN. The experimental results indicate that with an increase in Sn concentration, the magnetization continuously decreases and the crystal structure of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N changes from tetragonal to cubic phase at around x of 0.8. In the doping series, step-like anomaly in the isothermal magnetization was found and this behavior was highlighted at x?=?0.4. The anomaly could be attributed to the magnetic frustration, resulting from competition between the multiple spin configurations in the antiperovskite lattice. Meantime, H{sub c} of 18 kOe was observed at x?=?0.3, which is probably the highest among those of manganese antiperovskite materials reported so far. With increasing Sn content, the abrupt change of resistivity and the sharp peak of heat capacity in Mn{sub 3}SbN were gradually weakened. The crystal structure refinements indicate the weakened change at the magnetic transition is close related to the change of c/a ratio variation from tetragonal to cubic with Sn content. The results derived from this study indicate that the behavior of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N could potentially enhance its scientific and technical applications, such as spin torque transfer and hard magnets.

  9. Optical design of the adaptive optics laser guide star system

    SciTech Connect (OSTI)

    Bissinger, H.

    1994-11-15

    The design of an adaptive optics package for the 3 meter Lick telescope is presented. This instrument package includes a 69 actuator deformable mirror and a Hartmann type wavefront sensor operating in the visible wavelength; a quadrant detector for the tip-tile sensor and a tip-tilt mirror to stabilize atmospheric first order tip-tile errors. A high speed computer drives the deformable mirror to achieve near diffraction limited imagery. The different optical components and their individual design constraints are described. motorized stages and diagnostics tools are used to operate and maintain alignment throughout observation time from a remote control room. The expected performance are summarized and actual results of astronomical sources are presented.

  10. Atmospheric Radiation Measurement Climate Research Facility Operations...

    Office of Scientific and Technical Information (OSTI)

    Title: Atmospheric Radiation Measurement Climate Research Facility Operations Quarterly ... Atmospheric Radiation Measurement (ARM) Climate Research Facility fixed and mobile sites ...

  11. Optical microphone

    DOE Patents [OSTI]

    Veligdan, James T.

    2000-01-11

    An optical microphone includes a laser and beam splitter cooperating therewith for splitting a laser beam into a reference beam and a signal beam. A reflecting sensor receives the signal beam and reflects it in a plurality of reflections through sound pressure waves. A photodetector receives both the reference beam and reflected signal beam for heterodyning thereof to produce an acoustic signal for the sound waves. The sound waves vary the local refractive index in the path of the signal beam which experiences a Doppler frequency shift directly analogous with the sound waves.

  12. Optical devices

    DOE Patents [OSTI]

    Chaves, Julio C.; Falicoff, Waqidi; Minano, Juan C.; Benitez, Pablo; Dross, Oliver; Parkyn, Jr., William A.

    2010-07-13

    An optical manifold for efficiently combining a plurality of blue LED outputs to illuminate a phosphor for a single, substantially homogeneous output, in a small, cost-effective package. Embodiments are disclosed that use a single or multiple LEDs and a remote phosphor, and an intermediate wavelength-selective filter arranged so that backscattered photoluminescence is recycled to boost the luminance and flux of the output aperture. A further aperture mask is used to boost phosphor luminance with only modest loss of luminosity. Alternative non-recycling embodiments provide blue and yellow light in collimated beams, either separately or combined into white.

  13. Optical microfluidics

    SciTech Connect (OSTI)

    Kotz, K.T.; Noble, K.A.; Faris, G.W. [Molecular Physics Laboratory, SRI International, 333 Ravenswood Avenue, Menlo Park, California 94025 (United States)

    2004-09-27

    We present a method for the control of small droplets based on the thermal Marangoni effect using laser heating. With this approach, droplets covering five orders of magnitude in volume ({approx}1.7 {mu}L to 14 pL), immersed in decanol, were moved on an unmodified polystyrene surface, with speeds of up to 3 mm/s. When two droplets were brought into contact, they spontaneously fused and rapidly mixed in less than 33 ms. This optically addressed microfluidic approach has many advantages for microfluidic transport, including exceptional reconfigurability, low intersample contamination, large volume range, extremely simple substrates, no electrical connections, and ready scaling to large arrays.

  14. Spectrometer for Sky-Scanning Sun-Tracking Atmospheric Research (4STAR): Instrument Technology

    SciTech Connect (OSTI)

    Dunagan, Stephen; Johnson, Roy; Zavaleta, Jhony; Russell, P. B.; Schmid, Beat; Flynn, Connor J.; Redemann, Jens; Shinozuka, Yohei; Livingston, J.; Segal Rozenhaimer, Michal

    2013-08-06

    The Spectrometer for Sky-Scanning, Sun-Tracking Atmospheric Research (4STAR) combines airborne sun tracking and sky scanning with diffraction spectroscopy, to improve knowledge of atmospheric constituents and their links to air-pollution/climate. Direct beam hyper-spectral measurement of optical depth improves retrievals of gas constituents and determination of aerosol properties. Sky scanning enhances retrievals of aerosol type and size distribution. 4STAR measurements will tighten the closure between satellite and ground-based measurements. 4STAR incorporates a modular sun-tracking/ sky-scanning optical head with fiber optic signal transmission to rack mounted spectrometers, permitting miniaturization of the external optical head, and future detector evolution. Technical challenges include compact optical collector design, radiometric dynamic range and stability, and broad spectral coverage. Test results establishing the performance of the instrument against the full range of operational requirements are presented, along with calibration, engineering flight test, and scientific field campaign data and results.

  15. ORISE: Climate and Atmospheric Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Oak Ridge Institute for Science Education Climate and Atmospheric Research Conducting climate research focused on issues of national and global importance is one of the primary objectives of the Atmospheric Turbulence and Diffusion Division (ATDD)-a field division of the National Oceanic and Atmospheric Administration. ORAU partners with ATDD-and in collaboration with scientists and engineers from Oak Ridge National Laboratory (ORNL) as well as government agencies, universities, and private

  16. ARM - Sources of Atmospheric Carbon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sources of Atmospheric Carbon Outreach Home Room News Publications Traditional Knowledge Kiosks Barrow, Alaska Tropical Western Pacific Site Tours Contacts Students Study Hall About ARM Global Warming FAQ Just for Fun Meet our Friends Cool Sites Teachers Teachers' Toolbox Lesson Plans Sources of Atmospheric Carbon Atmospheric carbon represented a steady state system, where influx equaled outflow, before the Industrial Revolution. Currently, it is no longer a steady state system because the

  17. Optical interconnect assembly

    DOE Patents [OSTI]

    Laughlin, Daric; Abel, Philip

    2015-06-09

    An optical assembly includes a substrate with a first row of apertures and a second row of apertures. A first optical die includes a first plurality of optical transducer elements and is mounted on the substrate such that an optical signal interface of each transducer element is aligned with an aperture of the first row of optical apertures. A second optical die includes a second plurality of optical transducer elements and is mounted on the substrate such that an optical signal interface of each of the second plurality of optical transducer elements is aligned with an aperture of the second row of optical apertures. A connector configured to mate with the optical assembly supports a plurality of optical fibers. A terminal end of each optical fiber protrudes from the connector and extends into one of the apertures when the connector is coupled with the optical assembly.

  18. Production and properties of Si-SiO2-In Sb structures

    SciTech Connect (OSTI)

    Padalko, A.G.; Kotov, B.A.; Lazarev, V.B.; Sukharev, V.I.; Volkov, V.V.

    1985-10-01

    When MIS structures are formed by pyrolysis of silane with subsequent thermal oxidation of the film of polycrystalline silicon on sapphire and with oriented crystallization of thin layers of an indium antimonide melt on the produced structures, the highly doped silicon-silicon dioxide-InSb has a concentration of majority charge carriers of (2-5) . 10/sup 15/ cm/sup -9/ with a density of surface states of (2-8) . 10/sup 11/ ev/sup -1/ . cm/sup -2/.

  19. Torsional fatigue model for limitorque type SMB/SB/SBD actuators for motor-operated valves

    SciTech Connect (OSTI)

    Somogyi, D.; Alvarez, P.D.; Kalsi, M.S.

    1996-12-01

    Kalsi Engineering, Inc. has recently developed a computer program to predict the torsional fatigue life of Limitorque Type SMB/SB/SBD actuators for motor-operated valves under given loading levels, including those that exceed the ratings. The development effort was an outgrowth of the {open_quote}Thrust Rating Increase{close_quote} test program. The fatigue model computes all pertinent stress components and their variations as a function of the loading ramp. The cumulative damage and fatigue life due to stress cycling is computed by use of a modification of Miner`s rule. Model predictions were validated against actual cyclic loading test results.

  20. Pairing phenomenon in doubly odd neutron rich {sup 136}Sb nucleus

    SciTech Connect (OSTI)

    Laouet, N.; Benrachi, F.

    2012-06-27

    Based on p-n and n-n pairing gap energies giving by K. Kaneko et al. (2003), we make modifications on the kh5082 interaction. Calculations and study of some nuclear properties for {sup 136}Sb nucleus are developed in the framework of the nuclear shell model by means of OXBASH structure code. We get the same energetic sequence as the recent experimental values of single particle energies. The effective charge values e{sub p}=1.35e and e{sub n}=0.9e, and factors given by V. I. Isakov are used to evaluate multipole electromagnetic moments.

  1. Hybridized Nature of Pseudogap in Kondo Insulators CeRhSb and CeRhAs

    SciTech Connect (OSTI)

    Kumigashira, H.; Takahashi, T.; Yoshii, S.; Kasaya, M.

    2001-08-06

    We studied the electronic structure of Kondo insulators CeRhSb and CeRhAs using high-resolution photoemission spectroscopy. We found that the 4f -derived density of states shows a depletion (pseudogap) at E{sub F} in contrast to metallic Kondo materials. It was found that the size of the f pseudogap is smaller than that of conduction electrons (c pseudogap) while both scale well with the Kondo temperature. The present results indicate that the hybridization between 4f and conduction electrons near E{sub F} is essential for the Kondo gap in the Ce-based compounds.

  2. Hybrid Back Surface Reflector GaInAsSb Thermophotovoltaic Devices

    SciTech Connect (OSTI)

    RK Huang; CA Wang; MK Connors; GW Turner; M Dashiell

    2004-05-11

    Back surface reflectors have the potential to improve thermophotovoltaic (TPV) device performance though the recirculation of infrared photons. The ''hybrid'' back-surface reflector (BSR) TPV cell approach allows one to construct BSRs for TPV devices using conventional, high efficiency, GaInAsSb-based TPV material. The design, fabrication, and measurements of hybrid BSR-TPV cells are described. The BSR was shown to provide a 4 mV improvement in open-circuit voltage under a constant shortcircuit current, which is comparable to the 5 mV improvement theoretically predicted. Larger improvements in open-circuit voltage are expected in the future with materials improvements.

  3. Correlation of CsK2Sb photocathode lifetime with antimony thickness

    SciTech Connect (OSTI)

    Mamun, M. A.; Hernandez-Garcia, C.; Poelker, M.; Elmustafa, A. A.

    2015-06-01

    CsK2Sb photocathodes with quantum efficiency on the order of 10% at 532 nm, and lifetime greater than 90 days at low voltage, were successfully manufactured via co-deposition of alkali species emanating from an effusion source. Photocathodes were characterized as a function of antimony layer thickness and alkali consumption, inside a vacuum chamber that was initially baked, but frequently vented without re-baking. Photocathode lifetime measured at low voltage is correlated with the antimony layer thickness. Photocathodes manufactured with comparatively thick antimony layers exhibited the best lifetime. We speculate that the antimony layer serves as a reservoir, or sponge, for the alkali.

  4. McMillan-Rowell Like Oscillations in a Superconductor-InAs/GaSb-Superconductor Junction

    SciTech Connect (OSTI)

    Shi, Xiaoyan; Yu, Wenlong; Hawkins, Samuel D.; Klem, John F.; Pan, Wei

    2015-08-04

    We fabricated a superconductor (Ta)-InAs/GaSb bilayer-superconductor (Ta) junction device that has a long mean free path and can preserve the wavelike properties of particles (electrons and holes) inside the junction. Differential conductance measurements were also carried out at low temperatures in this device, and McMillan-Rowell like oscillations (MROs) were observed. A much larger Fermi velocity, compared to that from Shubnikov-de Haas oscillations, was obtained from the frequency of MROs. Possible mechanisms are discussed for this discrepancy.

  5. Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors

    DOE Patents [OSTI]

    Biefeld, Robert M.; Dawson, L. Ralph; Fritz, Ian J.; Kurtz, Steven R.; Zipperian, Thomas E.

    1991-01-01

    A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.

  6. Spin Hall effect-controlled magnetization dynamics in NiMnSb

    SciTech Connect (OSTI)

    Dürrenfeld, P. Ranjbar, M.; Gerhard, F.; Gould, C.; Molenkamp, L. W.; Åkerman, J.

    2015-05-07

    We investigate the influence of a spin current generated from a platinum layer on the ferromagnetic resonance (FMR) properties of an adjacent ferromagnetic layer composed of the halfmetallic half-Heusler material NiMnSb. Spin Hall nano-oscillator devices are fabricated, and the technique of spin torque FMR is used to locally study the magnetic properties as in-plane anisotropies and resonance fields. A change in the FMR linewidth, in accordance with the additional spin torque produced by the spin Hall effect, is present for an applied dc current. For sufficiently large currents, this should yield auto-oscillations, which however are not achievable in the present device geometry.

  7. Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers

    SciTech Connect (OSTI)

    Nicolaï, J.; Warot-Fonrose, B.; Gatel, C. Ponchet, A.; Teissier, R.; Baranov, A. N.; Magen, C.

    2015-07-21

    Structural and chemical properties of InAs/AlSb interfaces have been studied by transmission electron microscopy. InAs/AlSb multilayers were grown by molecular beam epitaxy with different growth sequences at interfaces. The out-of-plane strain, determined using high resolution microscopy and geometrical phase analysis, has been related to the chemical composition of the interfaces analyzed by high angle annular dark field imaging. Considering the local strain and chemistry, we estimated the interface composition and discussed the mechanisms of interface formation for the different growth sequences. In particular, we found that the formation of the tensile AlAs-type interface is spontaneously favored due to its high thermal stability compared to the InSb-type interface. We also showed that the interface composition could be tuned using an appropriate growth sequence.

  8. Depth-dependent magnetism in epitaxial MnSb thin films: effects of surface passivation and cleaning

    SciTech Connect (OSTI)

    Aldous J. D.; Sanchez-Hanke C.; Burrows, C.W.; Maskery, I.; Brewer, M.S.; Hase, T.P.A.; Duffy, J.A.; Lees, M. Rs; Decoster, T.; Theis, W.; Quesada, A.; Schmid, A.K.; Bell, G.R.

    2012-03-15

    Depth-dependent magnetism in MnSb(0001) epitaxial films has been studied by combining experimental methods with different surface specificities: polarized neutron reflectivity, x-ray magnetic circular dichroism (XMCD), x-ray resonant magnetic scattering and spin-polarized low energy electron microscopy (SPLEEM). A native oxide {approx}4.5 nm thick covers air-exposed samples which increases the film's coercivity. HCl etching efficiently removes this oxide and in situ surface treatment of etched samples enables surface magnetic contrast to be observed in SPLEEM. A thin Sb capping layer prevents oxidation and preserves ferromagnetism throughout the MnSb film. The interpretation of Mn L{sub 3,2} edge XMCD data is discussed.

  9. SB6.0: The 6th International meeting on Synthetic Biology, July 9-11, 2013

    SciTech Connect (OSTI)

    Kahl, Linda J.

    2015-04-23

    The Synthetic Biology conference series (SBx.0) is the preeminent academic meeting in synthetic biology. Organized by the BioBricks Foundation, the SBx.0 conference series brings together leading researchers, students, industry executives, and policy makers from around the world to share, consider, debate, and plan efforts to make biology easier to engineer. Historically held every two years, the SBx.0 conferences are held in alternating locations in the United States, Europe, and Asia to encourage global participation and collaboration so that the ramifications of synthetic biology research and development are most likely to be safe ethical, and beneficial. On 9-11 July 2013, the 6th installment of the synthetic biology conference series (SB6.0) was held on the campus of Imperial College London (http://sb6.biobricks.org). The SB6.0 conference was attended by over 700 people, and many more were able to participate via video digital conference (http://sb6.biobricks.org/digital-conference/). Over the course of three days, the SB6.0 conference agenda included plenary sessions, workshops, and poster presentations covering topics ranging from the infrastructure needs arising when “Systematic Engineering Meets Biological Complexity” and design-led considerations for “Connecting People and Technologies” to discussions on “Engineering Biology for New Materials,” “Assessing Risk and Managing Biocontainment,” and “New Directions for Energy and Sustainability.” The $10,150 grant awarded by the U.S. Department of Energy (DE-SC0010233) to the BioBricks Foundation was used to provide partial reimbursement for the travel expenses of leading researchers from the United States to speak at the SB6.0 conference. A total of $9,450 was used to reimburse U.S. speakers for actual expenses related to the SB6.0 conference, including airfare (economy or coach only), ground transportation, hotel, and registration fees. In addition, $700 of the grant was used to offset

  10. Polyport atmospheric gas sampler

    DOE Patents [OSTI]

    Guggenheim, S. Frederic

    1995-01-01

    An atmospheric gas sampler with a multi-port valve which allows for multi, sequential sampling of air through a plurality of gas sampling tubes mounted in corresponding gas inlet ports. The gas sampler comprises a flow-through housing which defines a sampling chamber and includes a gas outlet port to accommodate a flow of gases through the housing. An apertured sample support plate defining the inlet ports extends across and encloses the sampling chamber and supports gas sampling tubes which depend into the sampling chamber and are secured across each of the inlet ports of the sample support plate in a flow-through relation to the flow of gases through the housing during sampling operations. A normally closed stopper means mounted on the sample support plate and operatively associated with each of the inlet ports blocks the flow of gases through the respective gas sampling tubes. A camming mechanism mounted on the sample support plate is adapted to rotate under and selectively lift open the stopper spring to accommodate a predetermined flow of gas through the respective gas sampling tubes when air is drawn from the housing through the outlet port.

  11. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

    DOE Patents [OSTI]

    Sherohman, John W.; Coombs, III, Arthur W.; Yee, Jick Hong; Wu, Kuang Jen J.

    2007-05-29

    For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

  12. Antiferromagnetism in EuCu2As2 and EuCu1.82Sb2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Anand, V. K.; Johnston, D. C.

    2015-05-07

    Single crystals of EuCu2As2 and EuCu2Sb2 were grown from CuAs and CuSb self-flux, respectively. The crystallographic, magnetic, thermal, and electronic transport properties of the single crystals were investigated by room-temperature x-ray diffraction (XRD), magnetic susceptibility χ versus temperature T, isothermal magnetization M versus magnetic field H, specific heat Cp(T), and electrical resistivity ρ(T) measurements. EuCu2As2 crystallizes in the body-centered tetragonal ThCr2Si2-type structure (space group I4/mmm), whereas EuCu2Sb2 crystallizes in the related primitive tetragonal CaBe2Ge2-type structure (space group P4/nmm). The energy-dispersive x-ray spectroscopy and XRD data for the EuCu2Sb2 crystals showed the presence of vacancies on the Cu sites, yielding themore » actual composition EuCu1.82Sb2. The ρ(T) and Cp(T) data reveal metallic character for both EuCu2As2 and EuCu1.82Sb2. Antiferromagnetic (AFM) ordering is indicated from the χ(T),Cp(T), and ρ(T) data for both EuCu2As2 (TN = 17.5 K) and EuCu1.82Sb2 (TN = 5.1 K). In EuCu1.82Sb2, the ordered-state χ(T) and M(H) data suggest either a collinear A-type AFM ordering of Eu+2 spins S = 7/2 or a planar noncollinear AFM structure, with the ordered moments oriented in the tetragonal ab plane in either case. This ordered-moment orientation for the A-type AFM is consistent with calculations with magnetic dipole interactions. As a result, the anisotropic χ(T) and isothermal M(H) data for EuCu2As2, also containing Eu+2 spins S = 7/2, strongly deviate from the predictions of molecular field theory for collinear AFM ordering and the AFM structure appears to be both noncollinear and noncoplanar.« less

  13. Optical manifold

    DOE Patents [OSTI]

    Falicoff, Waqidi; Chaves, Julio C.; Minano, Juan Carlos; Benitez, Pablo; Dross, Oliver; Parkyn, Jr., William A.

    2010-02-23

    Optical systems are described that have at least one source of a beam of blue light with divergence under 15.degree.. A phosphor emits yellow light when excited by the blue light. A collimator is disposed with the phosphor and forms a yellow beam with divergence under 15.degree.. A dichroic filter is positioned to transmit the beam of blue light to the phosphor and to reflect the beam of yellow light to an exit aperture. In different embodiments, the beams of blue and yellow light are incident upon said filter with central angles of 15.degree., 22.degree., and 45.degree.. The filter may reflect all of one polarization and part of the other polarization, and a polarization rotating retroreflector may then be provided to return the unreflected light to the filter.

  14. VolmerWeber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

    SciTech Connect (OSTI)

    Zhao, Yu Bertru, Nicolas; Folliot, Herv; Rohel, Tony; Mauger, Samuel J. C.; Koenraad, Paul M.

    2014-07-21

    We report on Sb surfactant growth of InAs nanostructures on GaAs{sub 0.51}Sb{sub 0.49} layers deposited on InP (001) and on (113)B oriented substrates. On the (001) orientation, the presence of Sb significantly favors the two-dimensional growth regime. Even after the deposition of 5 mono-layers of InAs, the epitaxial film remains flat and InAs/GaAs{sub 0.51}Sb{sub 0.49} type-II quantum wells are achieved. On (113)B substrates, same growth runs resulted in formation of high density InAs islands. Microscopic studies show that wetting layer is missing on (113)B substrates, and thus, a Volmer-Weber growth mode is concluded. These different behaviors are attributed to the surface energy changes induced by Sb atoms on surface.

  15. The Role of Anti-Phase Domains in InSb-Based Structures Grown on On-Axis and Off-Axis Ge Substrates

    SciTech Connect (OSTI)

    Debnath, M. C.; Mishima, T. D.; Santos, M. B.; Hossain, K.; Holland, O. W.

    2011-12-26

    Anti-phase domains form in InSb epilayers and InSb/Al{sub 0.20}In{sub 0.80}Sb single quantum wells when grown upon on-axis (001) Ge substrates by molecular beam epitaxy. Domain formation is partially suppressed through growth on Ge substrates with surfaces that are several degrees off the (001) or (211) axis. By using off-axis Ge substrates, room-temperature electron mobilities increased to {approx}60,000 cm{sup 2}/V-s and {approx}14,000 cm{sup 2}/V-s for a 4.0-{mu}m-thick InSb epilayer and a 25-nm InSb quantum well, respectively.

  16. Surface collective modes in the topological insulators Bi2Se3 and Bi0.5Sb1.5Te3-xSex

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kogar, A.; Gu, G.; Vig, S.; Thaler, A.; Wong, M. H.; Xiao, Y.; Reig-i-Plessis, D.; Cho, G. Y.; Valla, T.; Pan, Z.; et al

    2015-12-15

    In this study, we used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi2Se3 and Bi0.5Sb1.5Te3-xSex. Our goal was to identify the “spin plasmon” predicted by Raghu and co-workers [Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a surface plasmon arising from the bulk, free carriers in these materials. This excitation dominates the spectral weight in the bosonic function of the surface χ''(q,ω) at THz energy scales, and is the most likely origin of a quasiparticle dispersion kink observed in previous photoemission experiments. Our study suggestsmore » that the spin plasmon may mix with this other surface mode, calling for a more nuanced understanding of optical experiments in which the spin plasmon is reported to play a role.« less

  17. RELAP5 assessment using LSTF test data SB-CL-18

    SciTech Connect (OSTI)

    Lee, S.; Chung, B.D.; Kim, H.J.

    1993-05-01

    A 5 % cold leg break test, run SB-CL-18, conducted at the Large Scale Test Facility (LSTF) was analyzed using the RELAP5/MOD2 Cycle 36.04 and the RELAP5/MOD3 Version 5m5 codes. The test SB-CL-18 was conducted with the main objective being the investigation of the thermal-hydraulic mechanisms responsible for the early core uncovery, including the manometric effect due to an asymmetric coolant holdup in the steam generator upflow and downflow side. The present analysis, carried out with the RELAP5/MOD2 and MOD3 codes, demonstrates the code`s capability to predict, with sufficient accuracy, the main phenomena occurring in the depressurization transient, both from a qualitative and quantitative point of view. Nevertheless, several differences regarding the evolution of phenomena and affecting the timing order have been pointed out in the base calculations. The sensitivity study on the break flow and the nodalization study in the components of the steam generator U-tubes and the cross-over legs were also carried out. The RELAP5/MOD3 calculation with the nodalization change resulted in good predictions of the major thermal-hydraulic phenomena and their timing order.

  18. Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties

    SciTech Connect (OSTI)

    Das, Suprem R.; Mohammad, Asaduzzaman; Janes, David B.; Akatay, Cem; Khan, Mohammad Ryyan; Alam, Muhammad A.; Maeda, Kosuke; Deacon, Russell S.; Ishibashi, Koji; Chen, Yong P.; Sands, Timothy D.

    2014-08-28

    In this article, electrodeposition method is used to demonstrate growth of InSb nanowire (NW) arrays with hierarchical branched structures and complex morphology at room temperature using an all-solution, catalyst-free technique. A gold coated, porous anodic alumina membrane provided the template for the branched NWs. The NWs have a hierarchical branched structure, with three nominal regions: a “trunk” (average diameter of 150 nm), large branches (average diameter of 100 nm), and small branches (average diameter of sub-10 nm to sub-20 nm). The structural properties of the branched NWs were studied using scanning transmission electron microscopy, transmission electron microscopy, scanning electron microscopy, x-ray diffraction, energy dispersive x-ray spectroscopy, and Raman spectroscopy. In the as-grown state, the small branches of InSb NWs were crystalline, but the trunk regions were mostly nanocrystalline with an amorphous boundary. Post-annealing of NWs at 420 °C in argon produced single crystalline structures along 〈311〉 directions for the branches and along 〈111〉 for the trunks. Based on the high crystallinity and tailored structure in this branched NW array, the effective refractive index allows us to achieve excellent antireflection properties signifying its technological usefulness for photon management and energy harvesting.

  19. CaMn2Sb2: Spin waves on a frustrated antiferromagnetic honeycomb lattice

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    McNally, D. E.; Simonson, J. W.; Kistner-Morris, J. J.; Smith, G. J.; Hassinger, J. E.; DeBeer-Schmidt, L.; Kolesnikov, A. I.; Zaliznyak, I.; Aronson, M. C.

    2015-05-22

    We present inelastic neutron scattering measurements of the antiferromagnetic insulator CaMn2Sb2:, which consists of corrugated honeycomb layers of Mn. The dispersion of magnetic excitations has been measured along the H and L directions in reciprocal space, with a maximum excitation energy of ≈ 24 meV. These excitations are well described by spin waves in a Heisenberg model, including first and second neighbor exchange interactions, J1 and J2, in the Mn plane and also an exchange interaction between planes. The determined ratio J2/J1 ≈ 1/6 suggests that CaMn2Sb2: is the first example of a compound that lies very close to themore » mean field tricritical point, known for the classical Heisenberg model on the honeycomb lattice, where the N´eel phase and two different spiral phases coexist. The magnitude of the determined exchange interactions reveal a mean field ordering temperature ≈ 4 times larger than the reported N´eel temperature TN = 85 K, suggesting significant frustration arising from proximity to the tricritical point.« less

  20. Heavy and light hole transport in nominally undoped GaSb substrates

    SciTech Connect (OSTI)

    Kala, Hemendra; Umana-Membreno, Gilberto A.; Jolley, Gregory; Akhavan, Nima Dehdashti; Antoszewski, Jaroslaw; Faraone, Lorenzo; Patrashin, Mikhail A.; Akahane, Kouichi

    2015-01-19

    In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect measurements and high-resolution mobility spectrum analysis clearly indicate p-type conductivity due to carriers in both the heavy and light hole bands. The extracted hole concentrations indicate a thermal activation energy of 17.8 meV for the dominant native acceptor-like defects. A temperature-independent effective mass ratio of 9.0 ± 0.8 was determined from the ratio of measured heavy and light hole concentrations. Over the 56 K–300 K temperature range, the light hole mobility was found to be 4.7 ± 0.7 times higher than the heavy hole mobility. The measured room temperature mobilities for the light and heavy holes were 2550 cm{sup 2}/Vs and 520 cm{sup 2}/Vs, respectively.

  1. Structural, magnetic, and transport properties of Fe-doped CoTiSb epitaxial thin films

    SciTech Connect (OSTI)

    Sun, N. Y.; Zhang, Y. Q.; Che, W. R.; Shan, R.; Qin, J.

    2015-11-07

    Epitaxial intrinsic and Fe-doped CoTiSb thin films with C1{sub b} structure were grown on MgO(100) substrates by magnetron sputtering. The semiconducting-like behavior in both intrinsic and Fe-doped thin films was demonstrated by temperature dependence of longitudinal resistivity. The Fe-doped CoTiSb films with a wide range of doping concentrations can maintain semiconducting-like and magnetic properties simultaneously, while the semiconducting behavior is weakening with the increasing Fe concentration. For 21 at. % Fe-doped film, low lattice magnetic moment (around 0.65 μ{sub B}) and high resistivity (larger than 800 μΩ cm) are beneficial to its application as a magnetic electrode in spintronic devices. Anomalous Hall effect of 21 at. % Fe-doped film was also investigated and its behaviors can be treated well by recent-reported anomalous Hall scaling including the contribution of spin-phonon skew scattering.

  2. Atmospheric Emitted Radiance Interferometer (AERI) Handbook

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Gero, Jonathan; Hackel, Denny; Garcia, Raymond

    2005-01-01

    The atmospheric emitted radiance interferometer (AERI) is a ground-based instrument that measures the downwelling infrared radiance from the Earth’s atmosphere. The observations have broad spectral content and sufficient spectral resolution to discriminate among gaseous emitters (e.g., carbon dioxide and water vapor) and suspended matter (e.g., aerosols, water droplets, and ice crystals). These upward-looking surface observations can be used to obtain vertical profiles of tropospheric temperature and water vapor, as well as measurements of trace gases (e.g., ozone, carbon monoxide, and methane) and downwelling infrared spectral signatures of clouds and aerosols.The AERI is a passive remote sounding instrument, employing a Fourier transform spectrometer operating in the spectral range 3.3–19.2 μm (520–3020 cm-1) at an unapodized resolution of 0.5 cm-1 (max optical path difference of 1 cm). The extended-range AERI (ER-AERI) deployed in dry climates, like in Alaska, have a spectral range of 3.3–25.0 μm (400–3020 cm-1) that allow measurements in the far-infrared region. Typically, the AERI averages views of the sky over a 16-second interval and operates continuously.

  3. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials...

    Office of Scientific and Technical Information (OSTI)

    C.; Pop, Eric; Wong, H.-S.Philip; Wuttig, Matthias; Lindenberg, Aaron M. MATSCI, OPTICS, PHYS MATSCI, OPTICS, PHYS Abstract Not Provided http:www-public.slac.stanford.edu...

  4. Optical data latch

    DOE Patents [OSTI]

    Vawter, G. Allen

    2010-08-31

    An optical data latch is formed on a substrate from a pair of optical logic gates in a cross-coupled arrangement in which optical waveguides are used to couple an output of each gate to an photodetector input of the other gate. This provides an optical bi-stability which can be used to store a bit of optical information in the latch. Each optical logic gate, which can be an optical NOT gate (i.e. an optical inverter) or an optical NOR gate, includes a waveguide photodetector electrically connected in series with a waveguide electroabsorption modulator. The optical data latch can be formed on a III-V compound semiconductor substrate (e.g. an InP or GaAs substrate) from III-V compound semiconductor layers. A number of optical data latches can be cascaded to form a clocked optical data shift register.

  5. Optical absorption measurement system

    DOE Patents [OSTI]

    Draggoo, Vaughn G.; Morton, Richard G.; Sawicki, Richard H.; Bissinger, Horst D.

    1989-01-01

    The system of the present invention contemplates a non-intrusive method for measuring the temperature rise of optical elements under high laser power optical loading to determine the absorption coefficient. The method comprises irradiating the optical element with a high average power laser beam, viewing the optical element with an infrared camera to determine the temperature across the optical element and calculating the absorption of the optical element from the temperature.

  6. Electro-optical SLS devices for operating at new wavelength ranges

    DOE Patents [OSTI]

    Osbourn, Gordon C.

    1986-01-01

    An intrinsic semiconductor electro-optical device includes a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8-12 um. The junction consists of a strained-layer superlattice of alternating layers of two different III-V semiconductors having mismatched lattice constants when in bulk form. A first set of layers is either InAs.sub.1-x Sb.sub.x (where x is aobut 0.5 to 0.7) or In.sub.1-x Ga.sub.x As.sub.1-y Sb.sub.y (where x and y are chosen such that the bulk bandgap of the resulting layer is about the same as the minimum bandgap in the In.sub.1-x Ga.sub.x As.sub.1-y Sb.sub.y family). The second set of layers has a lattice constant larger than the lattice constant of the layers in the first set.

  7. System of laser pump and synchrotron radiation probe microdiffraction to investigate optical recording process

    SciTech Connect (OSTI)

    Yasuda, Nobuhiro; Fukuyama, Yoshimitsu; Osawa, Hitoshi; Kimura, Shigeru; Ito, Kiminori; Tanaka, Yoshihito; Matsunaga, Toshiyuki; Kojima, Rie; Hisada, Kazuya; Tsuchino, Akio; Birukawa, Masahiro; Yamada, Noboru; Sekiguchi, Koji; Fujiie, Kazuhiko; Kawakubo, Osamu; Takata, Masaki

    2013-06-15

    We have developed a system of laser-pump and synchrotron radiation probe microdiffraction to investigate the phase-change process on a nanosecond time scale of Ge{sub 2}Sb{sub 2}Te{sub 5} film embedded in multi-layer structures, which corresponds to real optical recording media. The measurements were achieved by combining (i) the pump-laser system with a pulse width of 300 ps, (ii) a highly brilliant focused microbeam with wide peak-energy width ({Delta}E/E {approx} 2%) made by focusing helical undulator radiation without monochromatization, and (iii) a precise sample rotation stage to make repetitive measurements. We successfully detected a very weak time-resolved diffraction signal by using this system from 100-nm-thick Ge{sub 2}Sb{sub 2}Te{sub 5} phase-change layers. This enabled us to find the dependence of the crystal-amorphous phase change process of the Ge{sub 2}Sb{sub 2}Te{sub 5} layers on laser power.

  8. Atmospheric Radiation Measurement Radiative Atmospheric Divergence using ARM Mobile

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Radiative Atmospheric Divergence using ARM Mobile Facility, GERB, and AMMA Stations (RADAGAST) Beginning in January 2006, the ARM Mobile Facility (AMF) began supporting RADAGAST to provide the first well-sampled direct esti- mates of the energy balance across the atmosphere. The experiment is part of an ongoing international study of the West African monsoon system and Saharan dust storms. Stationed outside the Niger Meteo- rological Office at the Niamey International Airport, the AMF is located

  9. Advanced Optical Technologies

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Advanced Optical Components and Technologies program develops, creates and provides critical optical components for laser-based missions at LLNL. Past projects focused on ...

  10. Optical extensometer

    DOE Patents [OSTI]

    Walker, Ray A.; Reich, Fred R.; Russell, James T.

    1978-01-01

    An optical extensometer is described using sequentially pulsed light beams for measuring the dimensions of objects by detecting two opposite edges of the object without contacting the object. The light beams may be of different distinguishable light characteristics, such as polarization or wave length, and are time modulated in an alternating manner at a reference frequency. The light characteristics are of substantially the same total light energy and are distributed symmetrically. In the preferred embodiment two light beam segments of one characteristic are on opposite sides of a middle segment of another characteristic. As a result, when the beam segments are scanned sequentially across two opposite edges of the object, they produce a readout signal at the output of a photoelectric detector that is compared with the reference signal by a phase comparator to produce a measurement signal with a binary level transition when the light beams cross an edge. The light beams may be of different cross sectional geometries, including two superimposed and concentric circular beam cross sections of different diameter, or two rectangular cross sections which intersect with each other substantially perpendicular so only their central portions are superimposed. Alternately, a row of three light beams can be used including two outer beams on opposite sides and separate from a middle beam. The three beams may all be of the same light characteristic. However it is preferable that the middle beam be of a different characteristic but of the same total energy as the two outer beams.

  11. Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

    SciTech Connect (OSTI)

    Ruppalt, Laura B. Cleveland, Erin R.; Champlain, James G.; Bennett, Brian R.; Prokes, Sharka M.

    2014-12-15

    In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD) high-k dielectric stacks with device-quality p-type GaSb(001) epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H{sub 2}/Ar plasma treatment and subsequently removed to air. High-k HfO{sub 2} and Al{sub 2}O{sub 3}/HfO{sub 2} bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS) capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H{sub 2}-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H{sub 2}-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

  12. Thermoelectric device including an alloy of GeTe and AgSbTe as the P-type element

    DOE Patents [OSTI]

    Skrabek, Emanuel Andrew; Trimmer, Donald Smith

    1976-01-01

    Improved alloys suitable for thermoelectric applications and having the general formula: (AgSbTe.sub.2).sub.1.sub.-x + (GeTe).sub.x wherein x has a value of about 0.80 and 0.85, have been found to possess unexpectedly high thermoelectric properties such as efficiency index, as well as other improved physical properties.

  13. SLUDGE BATCH 7 ACCEPTANCE EVALUATION: RADIONUCLIDE CONCENTRATIONS IN TANK 51 SB7 QUALIFICATION SAMPLE PREPARED AT SRNL

    SciTech Connect (OSTI)

    Pareizs, J.; Hay, M.

    2011-02-22

    Presented in this report are radionuclide concentrations required as part of the program of qualifying Sludge Batch Seven (SB7) for processing in the Defense Waste Processing Facility (DWPF). The SB7 material is currently in Tank 51 being washed and prepared for transfer to Tank 40. The acceptance evaluation needs to be completed prior to the transfer of the material in Tank 51 to Tank 40. The sludge slurry in Tank 40 has already been qualified for DWPF and is currently being processed as SB6. The radionuclide concentrations were measured or estimated in the Tank 51 SB7 Qualification Sample prepared at Savannah River National Laboratory (SRNL). This sample was prepared from the three liter qualification sample of Tank 51 sludge slurry (HTF-51-10-125) received on September 18, 2010. The sample was delivered to SRNL where it was initially characterized in the Shielded Cells. With consultation from the Liquid Waste Organization, the qualification sample was then modified by several washes and decants, which included addition of Pu from H Canyon and sodium nitrite per the Tank Farm corrosion control program. This final slurry now has a composition expected to be similar to that of the slurry in Tank 51 after final preparations have been made for transfer of that slurry to Tank 40. Determining the radionuclide concentrations in this Tank 51 SB7 Qualification Sample is part of the work requested in Technical Task Request (TTR) No. HLW-DWPF-TTR-2010-0031. The radionuclides included in this report are needed for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria (TSR/WAC) Evaluation, and the DWPF Solid Waste Characterization Program (TTR Task I.2). Radionuclides required to meet the Waste Acceptance Product Specifications (TTR Task III.2.) will be measured at a later date after the slurry from Tank 51 has been transferred to Tank 40. Then a sample of the as-processed SB7 will be taken and transferred to SRNL for measurement of these radionuclides

  14. High thermoelectric performance of In, Yb, Ce multiple filled CoSb{sub 3} based skutterudite compounds

    SciTech Connect (OSTI)

    Ballikaya, Sedat; Department of Physics, University of Michigan, Ann Arbor, MI, 48109 ; Uzar, Neslihan; Yildirim, Saffettin; Salvador, James R.; Uher, Ctirad

    2012-09-15

    Filling voids with rare earth atoms is an effective way to lowering thermal conductivity which necessarily enhances thermoelectric properties of skutterudite compounds. Yb atom is one of the most effective species among the rare earth atoms for filling the voids in the skutterudite structure due to a large atomic mass, radius and it is intermediate valence state. In this work, we aim to find the best filling partners for Yb using different combinations of Ce and In as well as to optimize actual filling fraction in order to achieve high values of ZT. The traditional method of synthesis relying on melting-annealing and followed by spark plasma sintering was used to prepare all samples. The thermoelectric properties of four samples of Yb{sub 0.2}In{sub 0.2}Co{sub 4}Sb{sub 12}, Yb{sub 0.2}Ce{sub 0.15}Co{sub 4}Sb{sub 12}, Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12}, and Yb{sub 0.3}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} (nominal) were examined based on the Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient. Hall coefficient and Seebeck coefficient signs confirm that all samples are n-type skutterudite compounds. Carrier density increases with the increasing Yb+Ce content. A high power factor value of 57.7 {mu}W/K{sup 2}/cm for Yb{sub 0.2}Ce{sub 0.15}Co{sub 4}Sb{sub 12} and a lower thermal conductivity value of 2.82 W/m/K for Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} indicate that small quantities of Ce with In may be a good partner to Yb to reduce the thermal conductivity further and thus enhance the thermoelectric performance of skutterudites. The highest ZT value of 1.43 was achieved for Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} triple-filled skutterudite at 800 K. - Graphical abstract: Thermoelectric figure of merit of Yb{sub x}In{sub y}Ce{sub z}Co{sub 4}Sb{sub 12} (0{<=}x,y,z{<=}0.18 actual) compounds versus temperature. Highlights: Black-Right-Pointing-Pointer TE properties of Yb

  15. Optical NAND gate

    DOE Patents [OSTI]

    Skogen, Erik J.; Raring, James; Tauke-Pedretti, Anna

    2011-08-09

    An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  16. Terrain-Responsive Atmospheric Code

    Energy Science and Technology Software Center (OSTI)

    1991-11-20

    The Terrain-Responsive Atmospheric Code (TRAC) is a real-time emergency response modeling capability designed to advise Emergency Managers of the path, timing, and projected impacts from an atmospheric release. TRAC evaluates the effects of both radiological and non-radiological hazardous substances, gases and particulates. Using available surface and upper air meteorological information, TRAC realistically treats complex sources and atmospheric conditions, such as those found in mountainous terrain. TRAC calculates atmospheric concentration, deposition, and dose for more thanmore » 25,000 receptor locations within 80 km of the release point. Human-engineered output products support critical decisions on the type, location, and timing of protective actions for workers and the public during an emergency.« less

  17. (Chemistry of the global atmosphere)

    SciTech Connect (OSTI)

    Marland, G.

    1990-09-27

    The traveler attended the conference The Chemistry of the Global Atmosphere,'' and presented a paper on the anthropogenic emission of carbon dioxide (CO{sub 2}) to the atmosphere. The conference included meetings of the International Global Atmospheric Chemistry (IGAC) programme, a core project of the International Geosphere/Biosphere Programme (IGBP) and the traveler participated in meetings on the IGAC project Development of Global Emissions Inventories'' and agreed to coordinate the working group on CO{sub 2}. Papers presented at the conference focused on the latest developments in analytical methods, modeling and understanding of atmospheric CO{sub 2}, CO, CH{sub 4}, N{sub 2}O, SO{sub 2}, NO{sub x}, NMHCs, CFCs, and aerosols.

  18. Atmospheric science and power production

    SciTech Connect (OSTI)

    Randerson, D.

    1984-07-01

    This is the third in a series of scientific publications sponsored by the US Atomic Energy Commission and the two later organizations, the US Energy Research and Development Adminstration, and the US Department of Energy. The first book, Meteorology and Atomic Energy, was published in 1955; the second, in 1968. The present volume is designed to update and to expand upon many of the important concepts presented previously. However, the present edition draws heavily on recent contributions made by atmospheric science to the analysis of air quality and on results originating from research conducted and completed in the 1970s. Special emphasis is placed on how atmospheric science can contribute to solving problems relating to the fate of combustion products released into the atmosphere. The framework of this book is built around the concept of air-quality modeling. Fundamentals are addressed first to equip the reader with basic background information and to focus on available meteorological instrumentation and to emphasize the importance of data management procedures. Atmospheric physics and field experiments are described in detail to provide an overview of atmospheric boundary layer processes, of how air flows around obstacles, and of the mechanism of plume rise. Atmospheric chemistry and removal processes are also detailed to provide fundamental knowledge on how gases and particulate matter can be transformed while in the atmosphere and how they can be removed from the atmosphere. The book closes with a review of how air-quality models are being applied to solve a wide variety of problems. Separate analytics have been prepared for each chapter.

  19. Non-Ideal p-n junction Diode of Sb{sub x}Se{sub 1-x}(x = 0.4, 0.5, 0.6, 0.7) Thin Films

    SciTech Connect (OSTI)

    Mustafa, Falah I.; Gupta, Shikha; Goyal, N.; Tripathi, S. K.

    2011-12-12

    We have made diodes consisting of the same alloy i.e. Sb{sub x}Se{sub 1-x}(x = 0.4, 0.5, 0.6 and 0.7), but change the concentration of Sb metal from 40% to 70% atomic weight percentage. It is observed from the Hall measurements that the nature of charge carriers have changed from p- to n-type at x = 0.6 for Sb{sub x}Se{sub 1-x}. We have measured I-V characteristics of four p-n junction diodes i.e. p-Sb{sub 2}Se{sub 3}/n-Sb{sub 3}Se{sub 2}, p-Sb{sub 2}Se{sub 3}/n-Sb{sub 7}Se{sub 3}, p-SbSe/n-Sb{sub 3}Se{sub 2}, p-SbSe/n-Sb{sub 7}Se{sub 3}. From the I-V plots we have calculated the parameters as built-in voltage (V{sub bi}), forward resistance (R{sub f}), ideal factor (n), saturation current (I{sub o}), breakdown current (I{sub Bd}) and breakdown voltage (V{sub Bd}).

  20. 1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cloud Amount of Midlatitude Continental Clouds in Tomsk Region: Preliminary Results T.B. Zhuravleva, T.M. Rasskazchikova, and T.K. Sklyadneva Institute of Atmospheric Optics SB RAS Tomsk, Russia S.V. Smirnov Institute of Monitoring of Climatic and Ecological Systems SB RAS Tomsk, Russia The Atmospheric Radiation Measurement (ARM) Program provides concentrated measurements of surface radiative budget as well as measurements of the atmospheric constituents including clouds, aerosols, water vapor,

  1. Evaluation of electron mobility in InSb quantum wells by means of percentage-impact

    SciTech Connect (OSTI)

    Mishima, T. D.; Edirisooriya, M.; Santos, M. B.

    2014-05-15

    In order to quantitatively analyze the contribution of each scattering factor toward the total carrier mobility, we use a new convenient figure-of-merit, named a percentage impact. The mobility limit due to a scattering factor, which is widely used to summarize a scattering analysis, has its own advantage. However, a mobility limit is not quite appropriate for the above purpose. A comprehensive understanding of the difference in contribution among many scattering factors toward the total carrier mobility can be obtained by evaluating percentage impacts of scattering factors, which can be straightforwardly calculated from their mobility limits and the total mobility. Our percentage impact analysis shows that threading dislocation is one of the dominant scattering factors for the electron transport in InSb quantum wells at room temperature.

  2. Ultrafast dynamics of type-II GaSb/GaAs quantum dots

    SciTech Connect (OSTI)

    Komolibus, K.; Piwonski, T.; Gradkowski, K.; Reyner, C. J.; Liang, B.; Huffaker, D. L.; Huyet, G.; Houlihan, J.

    2015-01-19

    In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures.

  3. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    SciTech Connect (OSTI)

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  4. Spectroscopy and capacitance measurements of tunneling resonances in an Sb-implanted point contact.

    SciTech Connect (OSTI)

    Wendt, Joel Robert; Rahman, Rajib; Ten Eyck, Gregory A.; Eng, Kevin; Carroll, Malcolm S.; Young, Ralph Watson; Lilly, Michael Patrick; Stalford, Harold Lenn; Bishop, Nathaniel; Bielejec, Edward Salvador

    2010-08-01

    We fabricated a split-gate defined point contact in a double gate enhancement mode Si-MOS device, and implanted Sb donor atoms using a self-aligned process. E-beam lithography in combination with a timed implant gives us excellent control over the placement of dopant atoms, and acts as a stepping stone to focused ion beam implantation of single donors. Our approach allows us considerable latitude in experimental design in-situ. We have identified two resonance conditions in the point contact conductance as a function of split gate voltage. Using tunneling spectroscopy, we probed their electronic structure as a function of temperature and magnetic field. We also determine the capacitive coupling between the resonant feature and several gates. Comparison between experimental values and extensive quasi-classical simulations constrain the location and energy of the resonant level. We discuss our results and how they may apply to resonant tunneling through a single donor.

  5. RELAP5/MOD2 assessment, OECD-LOFT small break experiment LP-SB-03

    SciTech Connect (OSTI)

    Guntay, S. )

    1990-04-01

    An analysis of the experimental results and post-test calculations using RELAP5/MOD2 carried out for OECD-LOFT small break experiment LP-SB-3 are presented. Experiment LP-SB-3 was conducted on March 5, 1984 in Loss-of-Fluid Test (LOFT) facility located at the Idaho National Engineering Laboratory (INEL). The experiment simulated a small cold leg break, with concurrent loss of high pressure injection system, and cooldown and recovery by feed and bleed of the steam generator secondary side and accumulator injection, respectively. The analysis was under taken as a part of a program at EIR aimed at developing experience in using the latest generation of best estimate Loss of Coolant Accident (LOCA) analysis computer codes, and to improve understanding of Small Break LOCA transients and as well as a part of a program aimed at assessing the RELAP5/MOD2 code. The latest available version (Cycle 33 to 36.1) of the code was used. The particular test selected for the analysis included several phenomena potentially relevant to any PWR plant operation in Switzerland. This report documents a short post-test analysis of the experiment emphasizing the results of additional analysis performed during the course of this task. RELAP5/MOD2 input model and results of the post-test calculation are documented. Included in the report are the results of a sensitivity analysis which show the predicted thermal-hydraulic response to a different input model. 7 refs., 55 figs., 2 tabs.

  6. Atmospheric Radiation Measurement Climate Research Facility Operations...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    27 Atmospheric Radiation Measurement Climate Research Facility Operations Quarterly Report ... DOESC-ARM-16-027 Atmospheric Radiation Measurement Climate Research Facility Operations ...

  7. AUDIT REPORT Atmospheric Radiation Measurement Climate Research...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atmospheric Radiation Measurement Climate Research Facility OAI-M-16-10 May 2016 U.S. ... Audit Report on the "Atmospheric Radiation Measurement Climate Research Facility" ...

  8. Atmospheric Radiation Measurement Climate Research Facility Operations...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    7 Atmospheric Radiation Measurement Climate Research Facility Operations Quarterly Report ... DOESC-ARM-16-037 Atmospheric Radiation Measurement Climate Research Facility Operations ...

  9. Atmospheric Radiation Measurement Climate Research Facility Operations...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    01 Atmospheric Radiation Measurement Climate Research Facility Operations Quarterly Report ... DOESC-ARM-16-001 Atmospheric Radiation Measurement Climate Research Facility Operations ...

  10. Atmospheric Radiation Measurement Climate Research Facility Operations...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    9 Atmospheric Radiation Measurement Climate Research Facility Operations Quarterly Report ... DOESC-ARM-15-069 Atmospheric Radiation Measurement Climate Research Facility Operations ...

  11. Composition and Reactions of Atmospheric Aerosol Particles

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Reactions of Atmospheric Aerosol Particles Print Microscopic aerosol particles in the atmosphere contain carbonaceous components from mineral dust and combustion...

  12. National Oceanic and Atmospheric Administration (NOAA) | Open...

    Open Energy Info (EERE)

    National Oceanic and Atmospheric Administration (NOAA) Jump to: navigation, search Logo: National Oceanic and Atmospheric Administration (NOAA) Name: National Oceanic and...

  13. Atmospheric Radiation Measurement (ARM) Climate Research Facility...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atmospheric Radiation Measurement (ARM) Climate Research Facility and Atmospheric System Research (ASR) Science and Infrastructure Steering Committee CHARTER June 2012 DISCLAIMER ...

  14. Search for: "atmospheric radiation measurement" | Data Explorer

    Office of Scientific and Technical Information (OSTI)

    Switch to Detail View for this search DOE Data Explorer Search Results Page 1 of 70 Search for: "atmospheric radiation measurement" 697 results for: "atmospheric radiation ...

  15. Atmospheric Radiation Measurement Climate Research Facility Annual...

    Office of Scientific and Technical Information (OSTI)

    Atmospheric Radiation Measurement Climate Research Facility Annual Report 2006 Citation Details In-Document Search Title: Atmospheric Radiation Measurement Climate Research ...

  16. SPIE Optics + Photonics 2011

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SPIE Optics + Photonics 2011 August 21-25, 2011 San Diego Convention Center San Diego

  17. PHOTOCHEMISTRY IN TERRESTRIAL EXOPLANET ATMOSPHERES. II. H{sub 2}S AND SO{sub 2} PHOTOCHEMISTRY IN ANOXIC ATMOSPHERES

    SciTech Connect (OSTI)

    Hu Renyu; Seager, Sara; Bains, William

    2013-05-20

    Sulfur gases are common components in the volcanic and biological emission on Earth, and are expected to be important input gases for atmospheres on terrestrial exoplanets. We study the atmospheric composition and the spectra of terrestrial exoplanets with sulfur compounds (i.e., H{sub 2}S and SO{sub 2}) emitted from their surfaces. We use a comprehensive one-dimensional photochemistry model and radiative transfer model to investigate the sulfur chemistry in atmospheres ranging from reducing to oxidizing. The most important finding is that both H{sub 2}S and SO{sub 2} are chemically short-lived in virtually all types of atmospheres on terrestrial exoplanets, based on models of H{sub 2}, N{sub 2}, and CO{sub 2} atmospheres. This implies that direct detection of surface sulfur emission is unlikely, as their surface emission rates need to be extremely high (>1000 times Earth's volcanic sulfur emission) for these gases to build up to a detectable level. We also find that sulfur compounds emitted from the surface lead to photochemical formation of elemental sulfur and sulfuric acid in the atmosphere, which would condense to form aerosols if saturated. For terrestrial exoplanets in the habitable zone of Sun-like stars or M stars, Earth-like sulfur emission rates result in optically thick haze composed of elemental sulfur in reducing H{sub 2}-dominated atmospheres for a wide range of particle diameters (0.1-1 {mu}m), which is assumed as a free parameter in our simulations. In oxidized atmospheres composed of N{sub 2} and CO{sub 2}, optically thick haze, composed of elemental sulfur aerosols (S{sub 8}) or sulfuric acid aerosols (H{sub 2}SO{sub 4}), will form if the surface sulfur emission is two orders of magnitude more than the volcanic sulfur emission of Earth. Although direct detection of H{sub 2}S and SO{sub 2} by their spectral features is unlikely, their emission might be inferred by observing aerosol-related features in reflected light with future generation space

  18. Optical XOR gate

    DOE Patents [OSTI]

    Vawter, G. Allen

    2013-11-12

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  19. Fiber optic connector

    DOE Patents [OSTI]

    Rajic, S.; Muhs, J.D.

    1996-10-22

    A fiber optic connector and method for connecting composite materials within which optical fibers are imbedded are disclosed. The fiber optic connector includes a capillary tube for receiving optical fibers at opposing ends. The method involves inserting a first optical fiber into the capillary tube and imbedding the unit in the end of a softened composite material. The capillary tube is injected with a coupling medium which subsequently solidifies. The composite material is machined to a desired configuration. An external optical fiber is then inserted into the capillary tube after fluidizing the coupling medium, whereby the optical fibers are coupled. 3 figs.

  20. Optical NOR gate

    DOE Patents [OSTI]

    Skogen, Erik J.; Tauke-Pedretti, Anna

    2011-09-06

    An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  1. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials...

    Office of Scientific and Technical Information (OSTI)

    Sponsoring Org: US DOE Office of Science (DOE SC) Country of Publication: United States Language: English Subject: MATSCI, OPTICS, PHYS Word Cloud More Like This Full Text preview ...

  2. ARESE (ARM Enhanced Shortwave Experiment) Science Plan [Atmospheric Radiation Program

    SciTech Connect (OSTI)

    Valero, F.P.J.; Schwartz, S.E.; Cess, R.D.; Ramanathan, V.; Collins, W.D.; Minnis, P.; Ackerman, T.P.; Vitko, J.; Tooman, T.P.

    1995-09-27

    Several recent studies have indicated that cloudy atmospheres may absorb significantly more solar radiation than currently predicted by models. The magnitude of this excess atmospheric absorption, is about 50% more than currently predicted and would have major impact on our understanding of atmospheric heating. Incorporation of this excess heating into existing general circulation models also appears to ameliorate some significant shortcomings of these models, most notably a tendency to overpredict the amount of radiant energy going into the oceans and to underpredict the tropopause temperature. However, some earlier studies do not show this excess absorption and an underlying physical mechanism that would give rise to such absorption has yet to be defined. Given the importance of this issue, the Department of Energy's (DOE) Atmospheric Radiation Measurement (ARM) program is sponsoring the ARM Enhanced Shortwave Experiment (ARESE) to study the absorption of solar radiation by clear and cloudy atmospheres. The experimental results will be compared with model calculations. Measurements will be conducted using three aircraft platforms (ARM-UAV Egrett, NASA ER-2, and an instrumented Twin Otter), as well as satellites and the ARM central and extended facilities in North Central Oklahoma. The project will occur over a four week period beginning in late September, 1995. Spectral broadband, partial bandpass, and narrow bandpass (10nm) solar radiative fluxes will be measured at different altitudes and at the surface with the objective to determine directly the magnitude and spectral characteristics of the absorption of shortwave radiation by the atmosphere (clear and cloudy). Narrow spectral channels selected to coincide with absorption by liquid water and ice will help in identifying the process of absorption of radiation. Additionally, information such as water vapor profiles, aerosol optical depths, cloud structure and ozone profiles, needed to use as input in radiative

  3. Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

    SciTech Connect (OSTI)

    Pandey, Sushil Kumar; Kumar Pandey, Saurabh; Awasthi, Vishnu; Mukherjee, Shaibal; Gupta, M.; Deshpande, U. P.

    2013-08-12

    Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O{sub 2}/(O{sub 2} + N{sub 2})% from 0% (N{sub 2}) to 100% (O{sub 2}). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O{sub 2} ambient exhibited higher hole concentration as compared with films annealed in vacuum or N{sub 2} ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb{sup 5+} states were more preferable in comparison to Sb{sup 3+} states for acceptor-like Sb{sub Zn}-2V{sub Zn} complex formation in SZO films.

  4. Lattice constant grading in the Al.sub.y Ga.sub.1-y As.sub.1-x Sb.sub.x alloy system

    DOE Patents [OSTI]

    Moon, Ronald L.

    1980-01-01

    Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5 .mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photolvoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of growing layer.

  5. Lattice constant grading in the Al.sub.y Ca.sub.1-y As.sub.1-x Sb.sub.x alloy system

    DOE Patents [OSTI]

    Moon, Ronald L.

    1981-01-01

    Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5.mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photovoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of the growing layer.

  6. The effects of surface bond relaxation on electronic structure of Sb{sub 2}Te{sub 3} nano-films by first-principles calculation

    SciTech Connect (OSTI)

    Li, C. Zhao, Y. F.; Fu, C. X.; Gong, Y. Y.; Chi, B. Q.; Sun, C. Q.

    2014-10-15

    The effects of vertical compressive stress on Sb{sub 2}Te{sub 3} nano-films have been investigated by the first principles calculation, including stability, electronic structure, crystal structure, and bond order. It is found that the band gap of nano-film is sensitive to the stress in Sb{sub 2}Te{sub 3} nano-film and the critical thickness increases under compressive stress. The band gap and band order of Sb{sub 2}Te{sub 3} film has been affected collectively by the surface and internal crystal structures, the contraction ratio between surface bond length of nano-film and the corresponding bond length of bulk decides the band order of Sb{sub 2}Te{sub 3} film.

  7. Visible-light absorption and large band-gap bowing of GaN1-xSbx from first principles

    SciTech Connect (OSTI)

    Sheetz, R. Michael; Richter, Ernst; Andriotis, Antonis N.; Lisenkov, Sergey; Pendyala, Chandrashekhar; Sunkara, Mahendra K.; Menon, Madhu

    2011-08-01

    Applicability of the Ga(Sbx)N1-x alloys for practical realization of photoelectrochemical water splitting is investigated using first-principles density functional theory incorporating the local density approximation and generalized gradient approximation plus the Hubbard U parameter formalism. Our calculations reveal that a relatively small concentration of Sb impurities is sufficient to achieve a significant narrowing of the band gap, enabling absorption of visible light. Theoretical results predict that Ga(Sbx)N1-x alloys with 2-eV band gaps straddle the potential window at moderate to low pH values, thus indicating that dilute Ga(Sbx)N1-x alloys could be potential candidates for splitting water under visible light irradiation.

  8. Optical Design for Extremely Large Telescope Adaptive Optics...

    Office of Scientific and Technical Information (OSTI)

    Large Telescope Adaptive Optics Systems Citation Details In-Document Search Title: Optical Design for Extremely Large Telescope Adaptive Optics Systems You are accessing a ...

  9. Optical Design for Extremely Large Telescope Adaptive Optics...

    Office of Scientific and Technical Information (OSTI)

    ThesisDissertation: Optical Design for Extremely Large Telescope Adaptive Optics Systems Citation Details In-Document Search Title: Optical Design for Extremely Large Telescope ...

  10. Atomistic modeling and HAADF investigations of misfit and threading dislocations in GaSb/GaAs hetero-structures for applications in high electron mobility transistors

    SciTech Connect (OSTI)

    Ruterana, Pierre Wang, Yi Chen, Jun Chauvat, Marie-Pierre; El Kazzi, S.; Deplanque, L.; Wallart, X.

    2014-10-06

    A detailed investigation on the misfit and threading dislocations at GaSb/GaAs interface has been carried out using molecular dynamics simulation and quantitative electron microscopy techniques. The sources and propagation of misfit dislocations have been elucidated. The nature and formation mechanisms of the misfit dislocations as well as the role of Sb on the stability of the Lomer configuration have been explained.

  11. Latching micro optical switch

    DOE Patents [OSTI]

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  12. Femtosecond optical clock

    SciTech Connect (OSTI)

    Bagaev, Sergei N; Denisov, Vladimir I; Zakharyash, Valerii F; Kashirsky, Aleksandr V; Klementyev, Vasilii M; Kuznetsov, Sergei A; Korel', I I; Pivtsov, V S

    2004-12-31

    New advances in the field of synthesis of optical frequencies and the development of a new generation of optical clocks are considered. The use of mode-locked femtosecond lasers and fibre emission-spectrum stretchers allows the synthesis of any frequencies (from radio-frequencies to the UV region) and drastically simplifies the structure of an optical clock. The schemes of femtosecond optical clock are presented and the application of tapered optical fibres in them is described. (optical metrology and quantum frequency standards)

  13. Phase transitions in double perovskite Sr{sub 2}ScSbO{sub 6}: An Ab-initio study

    SciTech Connect (OSTI)

    Ray, Rajyavardhan; Kumar, Uday; Sinha, T. P.

    2014-04-24

    First Principles study of the electronic properties of recently synthesized double perovskite Sr{sub 2}ScSbO{sub 6} have been performed using density functional theory. With increasing temperature, the Sr compound undergoes three structural phase transitions at 400K, 550K and 650K approximately, leading to the following sequence of phases: P21/n ? I2/m ? I4/m ? Fm-3m. Starting from the monoclinic phase P21/n at room temperature, resulting from the Sc/Sb ordering, the electronic structure for the tetragonal I4/m at 613K and cubic Fm-3m for T?660K has been studied in terms of the density of states and band-structure. Presence of large band gap, both direct and indirect, has been reported and analyzed.

  14. Effect of antimony on the deep-level traps in GaInNAsSb thin films

    SciTech Connect (OSTI)

    Islam, Muhammad Monirul Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka; Sakurai, Takeaki; Akimoto, Katsuhiro

    2014-09-15

    Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41?eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

  15. CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang; Liu Xinyu; Furdyna, Jacek K.; Smith, David J.

    2012-03-19

    CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

  16. Studies of scattering mechanisms in gate tunable InAs/(Al,Ga)Sb two dimensional electron gases

    SciTech Connect (OSTI)

    Shojaei, B.; McFadden, A.; Schultz, B. D.; Shabani, J.; Palmstrøm, C. J.

    2015-06-01

    A study of scattering mechanisms in gate tunable two dimensional electron gases confined to InAs/(Al,Ga)Sb heterostructures with varying interface roughness and dislocation density is presented. By integrating an insulated gate structure the evolution of the low temperature electron mobility and single-particle lifetime was determined for a previously unexplored density regime, 10{sup 11}–10{sup 12 }cm{sup −2}, in this system. Existing theoretical models were used to analyze the density dependence of the electron mobility and single particle lifetime in InAs quantum wells. Scattering was found to be dominated by charged dislocations and interface roughness. It was demonstrated that the growth of InAs quantum wells on nearly lattice matched GaSb substrate results in fewer dislocations, lower interface roughness, and improved low temperature transport properties compared to growth on lattice mismatched GaAs substrates.

  17. Methods for chemical recovery of non-carrier-added radioactive tin from irradiated intermetallic Ti-Sb targets

    DOE Patents [OSTI]

    Lapshina, Elena V.; Zhuikov, Boris L.; Srivastava, Suresh C.; Ermolaev, Stanislav V.; Togaeva, Natalia R.

    2012-01-17

    The invention provides a method of chemical recovery of no-carrier-added radioactive tin (NCA radiotin) from intermetallide TiSb irradiated with accelerated charged particles. An irradiated sample of TiSb can be dissolved in acidic solutions. Antimony can be removed from the solution by extraction with dibutyl ether. Titanium in the form of peroxide can be separated from tin using chromatography on strong anion-exchange resin. In another embodiment NCA radiotin can be separated from iodide solution containing titanium by extraction with benzene, toluene or chloroform. NCA radiotin can be finally purified from the remaining antimony and other impurities using chromatography on silica gel. NCA tin-117m can be obtained from this process. NCA tin-117m can be used for labeling organic compounds and biological objects to be applied in medicine for imaging and therapy of various diseases.

  18. Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Olson, Benjamin Varberg; Kim, Jin K.; Kadlec, Emil Andrew; Shaner, Eric A.; Haugan, Heather J.; Brown, Gail J.

    2015-09-28

    Minority carrier lifetimes in very long wavelength infrared (VLWIR) InAs/GaInSb superlattices (SLs) are reported using time-resolved microwave reflectance measurements. A strain-balanced ternary SL absorber layer of 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb, corresponding to a bandgap of ~50 meV, is found to have a minority carrier lifetime of 140 ± 20 ns at ~18 K. This lifetime is extraordinarily long, when compared to lifetime values previously reported for other VLWIR SL detector materials. As a result, this enhancement is attributed to the strain-engineered ternary design, which offers a variety of epitaxial advantages and ultimately leads to a reduction of defect-mediated recombinationmore » centers.« less

  19. Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices

    SciTech Connect (OSTI)

    Olson, Benjamin Varberg; Kim, Jin K.; Kadlec, Emil Andrew; Shaner, Eric A.; Haugan, Heather J.; Brown, Gail J.

    2015-09-28

    Minority carrier lifetimes in very long wavelength infrared (VLWIR) InAs/GaInSb superlattices (SLs) are reported using time-resolved microwave reflectance measurements. A strain-balanced ternary SL absorber layer of 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb, corresponding to a bandgap of ~50 meV, is found to have a minority carrier lifetime of 140 ± 20 ns at ~18 K. This lifetime is extraordinarily long, when compared to lifetime values previously reported for other VLWIR SL detector materials. As a result, this enhancement is attributed to the strain-engineered ternary design, which offers a variety of epitaxial advantages and ultimately leads to a reduction of defect-mediated recombination centers.

  20. On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level

    SciTech Connect (OSTI)

    Boiko, V. M.; Brudnii, V. N.; Ermakov, V. S.; Kolin, N. G.; Korulin, A. V.

    2015-06-15

    The electronic properties and the limiting position of the Fermi level in p-GaSb crystals irradiated with full-spectrum reactor neutrons at up to a fluence of 8.6 × 10{sup 18} cm{sup −2} are studied. It is shown that the irradiation of GaSb with reactor neutrons results in an increase in the concentration of free holes to p{sub lim} = (5−6) × 10{sup 18} cm{sup −3} and in pinning of the Fermi level at the limiting position F{sub lim} close to E{sub V} + 0.02 eV at 300 K. The effect of the annealing of radiation defects in the temperature range 100–550°C is explored.

  1. Active optical zoom system

    DOE Patents [OSTI]

    Wick, David V.

    2005-12-20

    An active optical zoom system changes the magnification (or effective focal length) of an optical imaging system by utilizing two or more active optics in a conventional optical system. The system can create relatively large changes in system magnification with very small changes in the focal lengths of individual active elements by leveraging the optical power of the conventional optical elements (e.g., passive lenses and mirrors) surrounding the active optics. The active optics serve primarily as variable focal-length lenses or mirrors, although adding other aberrations enables increased utility. The active optics can either be LC SLMs, used in a transmissive optical zoom system, or DMs, used in a reflective optical zoom system. By appropriately designing the optical system, the variable focal-length lenses or mirrors can provide the flexibility necessary to change the overall system focal length (i.e., effective focal length), and therefore magnification, that is normally accomplished with mechanical motion in conventional zoom lenses. The active optics can provide additional flexibility by allowing magnification to occur anywhere within the FOV of the system, not just on-axis as in a conventional system.

  2. ''Atomic Optics'': Nonimaging Optics on the Nanoscale

    SciTech Connect (OSTI)

    Roland Winston Joseph O'Gallagher

    2005-01-15

    This is the final report for a one year close out extension of our basic research program that was established at the University of Chicago more than sixteen years ago to explore and develop the optical sub-discipline that has come to be known as ''nonimaging optics''. This program has been extremely fruitful, having both broadened the range of formalism available for workers in this field and led to the discovery of many new families of optical devices. These devices and techniques have applications wherever the efficient transport and transformation of light distributions are important, in particular in illumination, fiber optics, collection and concentration of sunlight, and the detection of faint light signals in physics and astrophysics. Over the past thirty years, Nonimaging Optics (Welford and Winston, 1989) has brought a fresh approach to the analysis of many problems in classical macro-scale optics. Through the application of phase-space concepts, statistical methods, thermodynamic arguments, etc., many previously established performance limits were able to be broken and many technical surprises with exciting practical applications were discovered. The most recent three-year phase of our long-term continuing program ended in late 2002 and emphasized extending our work in geometrical optics and expanding it to include some interesting questions in physical optics as well as in the new field of statistical optics. This report presents a survey of the basic history and concepts of nonimaging optics and reviews highlights and significant accomplishments over the past fifteen years. This is followed by a more detailed summary of recent research directions and accomplishments during the last three years. This most recent phase was marked by the broadening in scope to include a separate project involving a collaboration with an industrial partner, Science Applications International Corporation (SAIC). This effort was proposed and approved in 1998 and was

  3. High bandwidth optical mount

    DOE Patents [OSTI]

    Bender, D.A.; Kuklo, T.

    1994-11-08

    An optical mount, which directs a laser beam to a point by controlling the position of a light-transmitting optic, is stiffened so that a lowest resonant frequency of the mount is approximately one kilohertz. The optical mount, which is cylindrically-shaped, positions the optic by individually moving a plurality of carriages which are positioned longitudinally within a sidewall of the mount. The optical mount is stiffened by allowing each carriage, which is attached to the optic, to move only in a direction which is substantially parallel to a center axis of the optic. The carriage is limited to an axial movement by flexures or linear bearings which connect the carriage to the mount. The carriage is moved by a piezoelectric transducer. By limiting the carriage to axial movement, the optic can be kinematically clamped to a carriage. 5 figs.

  4. High bandwidth optical mount

    DOE Patents [OSTI]

    Bender, Donald A.; Kuklo, Thomas

    1994-01-01

    An optical mount, which directs a laser beam to a point by controlling the position of a light-transmitting optic, is stiffened so that a lowest resonant frequency of the mount is approximately one kilohertz. The optical mount, which is cylindrically-shaped, positions the optic by individually moving a plurality of carriages which are positioned longitudinally within a sidewall of the mount. The optical mount is stiffened by allowing each carriage, which is attached to the optic, to move only in a direction which is substantially parallel to a center axis of the optic. The carriage is limited to an axial movement by flexures or linear bearings which connect the carriage to the mount. The carriage is moved by a piezoelectric transducer. By limiting the carriage to axial movement, the optic can be kinematically clamped to a carriage.

  5. Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy

    SciTech Connect (OSTI)

    Hosseini Vajargah, S.; Woo, S. Y.; Botton, G. A.; Ghanad-Tavakoli, S.; Kleiman, R. N.; Preston, J. S.

    2012-11-01

    The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs' faceting.

  6. Synthesis of nanocrystalline thin films of gold on the surface of GaSb by swift heavy ion

    SciTech Connect (OSTI)

    Jadhav, Vidya; Dubey, S. K.; Yadav, A. D.; Singh, A.

    2013-02-05

    Thin films of gold ({approx}100 nm thick) were deposited on p-type GaSb substrates. These samples were irradiated with 100 MeV Fe{sup 7+}ions for the fluence of 1 Multiplication-Sign 10{sup 13} and 1 Multiplication-Sign 10{sup 14} ions cm{sup -2}. After irradiation, samples were characterized using AFM, UV-VIS -NIR, X-Ray Diffraction techniques. AFM studies showed the presence of clusters on the surface of GaSb. R.M.S. roughness of the sample was found to increase w.r.t ion fluence. Absorption coefficient obtained from the Ultra violet - Visible NIR (UV-VIS -NIR) spectra of the samples irradiated with various fluences compared with non irradiated GaSb. The annealing experiment showed a significant improvement in the absorption coefficient after rapid thermal annealing at temperature of 400 Degree-Sign C. X-Ray Diffraction study reveals different orientations of Au film.

  7. Enhanced thermoelectric performance and novel nanopores in AgSbTe{sub 2} prepared by melt spinning

    SciTech Connect (OSTI)

    Du, Baoli; Li, Han; Xu, Jingjing; Tang, Xinfeng; Uher, Ctirad

    2011-01-15

    We report a melt-spinning spark-plasma-sintering synthesis process of the polycrystalline p-type material composed of AgSbTe{sub 2} coarse grains and evenly formed 5-10 nm pores that occur primarily on the surface of matrix grains. The formation mechanism of nanopores and their influences on the thermoelectric properties have been studied and correlated. Microstructure analysis shows that the as-prepared sample can be regarded as a nanocomposite of matrix and in situ generated nanopores evenly coated on matrix grains. For the single-phase component and the possible energy-filter effect caused by the nanopores, the electrical transport properties are improved. Moreover, the thermal conductivity is significantly reduced by strong phonon scattering effect resulted from the nanopores. The thermoelectric performance of the as prepared sample enhances greatly and a ZT of 1.65 at 570 K is achieved, increasing{approx}200% compared with the sample prepared by traditional melt and slow-cooling method. -- Graphical abstract: Representative nanostructure of AgSbTe{sub 2} sample (a) ribbons obtained after melt spinning (b) bulk AgSbTe{sub 2} material obtained after spark plasma sintering. Display Omitted

  8. Electron interactions and Dirac fermions in graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices

    SciTech Connect (OSTI)

    Sa, Baisheng; Sun, Zhimei

    2014-06-21

    Graphene based superlattices have been attracted worldwide interest due to the combined properties of the graphene Dirac cone feature and all kinds of advanced functional materials. In this work, we proposed a novel series of graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices based on the density functional theory calculations. We demonstrated the stability in terms of energy and lattice dynamics for such kind of artificial materials. The analysis of the electronic structures unravels the gap opening nature at Dirac cone of the insert graphene layer. The Dirac fermions in the graphene layers are strongly affected by the electron spin orbital coupling in the Ge{sub 2}Sb{sub 2}Te{sub 5} layers. The present results show the possible application in phase-change data storage of such kind of superlattice materials, where the Ge{sub 2}Sb{sub 2}Te{sub 5} layers exhibit as the phase-change data storage media and the graphene layer works as the electrode, probe, and heat conductor.

  9. Optical voltage reference

    DOE Patents [OSTI]

    Rankin, R.; Kotter, D.

    1994-04-26

    An optical voltage reference for providing an alternative to a battery source is described. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function. 2 figures.

  10. Reflective optical imaging system

    DOE Patents [OSTI]

    Shafer, David R.

    2000-01-01

    An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four reflective elements for projecting a mask image onto a substrate. The four optical elements are characterized in order from object to image as convex, concave, convex and concave mirrors. The optical system is particularly suited for step and scan lithography methods. The invention increases the slit dimensions associated with ringfield scanning optics, improves wafer throughput and allows higher semiconductor device density.

  11. Fiber optic micro accelerometer

    DOE Patents [OSTI]

    Swierkowski, Steve P.

    2005-07-26

    An accelerometer includes a wafer, a proof mass integrated into the wafer, at least one spring member connected to the proof mass, and an optical fiber. A Fabry-Perot cavity is formed by a partially reflective surface on the proof mass and a partially reflective surface on the end of the optical fiber. The two partially reflective surfaces are used to detect movement of the proof mass through the optical fiber, using an optical detection system.

  12. Optical voltage reference

    DOE Patents [OSTI]

    Rankin, Richard; Kotter, Dale

    1994-01-01

    An optical voltage reference for providing an alternative to a battery source. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function.

  13. High resolution transmission spectroscopy as a diagnostic for Jovian exoplanet atmospheres: constraints from theoretical models

    SciTech Connect (OSTI)

    Kempton, Eliza M.-R.; Perna, Rosalba; Heng, Kevin

    2014-11-01

    We present high resolution transmission spectra of giant planet atmospheres from a coupled three-dimensional (3D) atmospheric dynamics and transmission spectrum model that includes Doppler shifts which arise from winds and planetary motion. We model Jovian planets covering more than two orders of magnitude in incident flux, corresponding to planets with 0.9-55 day orbital periods around solar-type stars. The results of our 3D dynamical models reveal certain aspects of high resolution transmission spectra that are not present in simple one-dimensional (1D) models. We find that the hottest planets experience strong substellar to anti-stellar (SSAS) winds, resulting in transmission spectra with net blueshifts of up to 3 km s{sup 1}, whereas less irradiated planets show almost no net Doppler shifts. We find only minor differences between transmission spectra for atmospheres with temperature inversions and those without. Compared to 1D models, peak line strengths are significantly reduced for the hottest atmospheres owing to Doppler broadening from a combination of rotation (which is faster for close-in planets under the assumption of tidal locking) and atmospheric winds. Finally, high resolution transmission spectra may be useful in studying the atmospheres of exoplanets with optically thick clouds since line cores for very strong transitions should remain optically thick to very high altitude. High resolution transmission spectra are an excellent observational test for the validity of 3D atmospheric dynamics models, because they provide a direct probe of wind structures and heat circulation. Ground-based exoplanet spectroscopy is currently on the verge of being able to verify some of our modeling predictions, most notably the dependence of SSAS winds on insolation. We caution that interpretation of high resolution transmission spectra based on 1D atmospheric models may be inadequate, as 3D atmospheric motions can produce a noticeable effect on the absorption

  14. Constant volume gas cell optical phase-shifter

    DOE Patents [OSTI]

    Phillion, Donald W.

    2002-01-01

    A constant volume gas cell optical phase-shifter, particularly applicable for phase-shifting interferometry, contains a sealed volume of atmospheric gas at a pressure somewhat different than atmospheric. An optical window is present at each end of the cell, and as the length of the cell is changed, the optical path length of a laser beam traversing the cell changes. The cell comprises movable coaxial tubes with seals and a volume equalizing opening. Because the cell is constant volume, the pressure, temperature, and density of the contained gas do not change as the cell changes length. This produces an exactly linear relationship between the change in the length of the gas cell and the change in optical phase of the laser beam traversing it. Because the refractive index difference between the gas inside and the atmosphere outside is very much the same, a large motion must be made to change the optical phase by the small fraction of a wavelength that is required by phase-shifting interferometry for its phase step. This motion can be made to great fractional accuracy.

  15. The magnetic structure of EuCu2Sb2

    SciTech Connect (OSTI)

    Ryan, D. H.; Cadogan, J. M.; Anand, V. K.; Johnston, D. C.; Flacau, R.

    2015-05-06

    Antiferromagnetic ordering of EuCu2Sb2 which forms in the tetragonal CaBe2Ge2-type structure (space group P4/nmm #129) has been studied using neutron powder diffraction and 151Eu Mssbauer spectroscopy. The room temperature 151Eu isomer shift of 12.8(1) mm/s shows the Eu to be divalent, while the 151Eu hyperfine magnetic field (Bhf) reaches 28.7(2) T at 2.1 K, indicating a full Eu2+ magnetic moment. Bhf(T) follows a smooth $S=\\frac{7}{2}$ Brillouin function and yields an ordering temperature of 5.1(1) K. Refinement of the neutron diffraction data reveals a collinear A-type antiferromagnetic arrangement with the Eu moments perpendicular to the tetragonal c-axis. As a result, the refined Eu magnetic moment at 0.4 K is 7.08(15) ?B which is the full free-ion moment expected for the Eu2+ ion with $S=\\frac{7}{2}$ and a spectroscopic splitting factor of g = 2.

  16. Influence of interstitial Mn on magnetism in room-temperature ferromagnet Mn(1+delta)Sb

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Taylor, Alice E; Berlijn, Tom; Hahn, Steven E; May, Andrew F; Williams, Travis J; Poudel, Lekhanath N; Calder, Stuart A; Fishman, Randy Scott; Stone, Matthew B; Aczel, Adam A; et al

    2015-01-01

    We report elastic and inelastic neutron scattering measurements of the high-TC ferromagnet Mn(1+delta)Sb. Measurements were performed on a large, TC = 434 K, single crystal with interstitial Mn content of delta=0.13. The neutron diffraction results reveal that the interstitial Mn has a magnetic moment, and that it is aligned antiparallel to the main Mn moment. We perform density functional theory calculations including the interstitial Mn, and find the interstitial to be magnetic in agreement with the diffraction data. The inelastic neutron scattering measurements reveal two features in the magnetic dynamics: i) a spin-wave-like dispersion emanating from ferromagnetic Bragg positions (Hmore » K 2n), and ii) a broad, non-dispersive signal centered at forbidden Bragg positions (H K 2n+1). The inelastic spectrum cannot be modeled by simple linear spin-wave theory calculations, and appears to be significantly altered by the presence of the interstitial Mn ions. The results show that the influence of the int« less

  17. Activity of the kinesin spindle protein inhibitor ispinesib (SB-715992) in models of breast cancer

    SciTech Connect (OSTI)

    Purcell, James W; Davis, Jefferson; Reddy, Mamatha; Martin, Shamra; Samayoa, Kimberly; Vo, Hung; Thomsen, Karen; Bean, Peter; Kuo, Wen Lin; Ziyad, Safiyyah; Billig, Jessica; Feiler, Heidi S; Gray, Joe W; Wood, Kenneth W; Cases, Sylvaine

    2009-06-10

    Ispinesib (SB-715992) is a potent inhibitor of kinesin spindle protein (KSP), a kinesin motor protein essential for the formation of a bipolar mitotic spindle and cell cycle progression through mitosis. Clinical studies of ispinesib have demonstrated a 9% response rate in patients with locally advanced or metastatic breast cancer, and a favorable safety profile without significant neurotoxicities, gastrointestinal toxicities or hair loss. To better understand the potential of ispinesib in the treatment of breast cancer we explored the activity of ispinesib alone and in combination several therapies approved for the treatment of breast cancer. We measured the ispinesib sensitivity and pharmacodynamic response of breast cancer cell lines representative of various subtypes in vitro and as xenografts in vivo, and tested the ability of ispinesib to enhance the anti-tumor activity of approved therapies. In vitro, ispinesib displayed broad anti-proliferative activity against a panel of 53 breast cell-lines. In vivo, ispinesib produced regressions in each of five breast cancer models, and tumor free survivors in three of these models. The effects of ispinesib treatment on pharmacodynamic markers of mitosis and apoptosis were examined in vitro and in vivo, revealing a greater increase in both mitotic and apoptotic markers in the MDA-MB-468 model than in the less sensitive BT-474 model. In vivo, ispinesib enhanced the anti-tumor activity of trastuzumab, lapatinib, doxorubicin, and capecitabine, and exhibited activity comparable to paclitaxel and ixabepilone. These findings support further clinical exploration of KSP inhibitors for the treatment of breast cancer.

  18. Influence of interstitial Mn on magnetism in room-temperature ferromagnet Mn(1+delta)Sb

    SciTech Connect (OSTI)

    Taylor, Alice E; Berlijn, Tom; Hahn, Steven E; May, Andrew F; Williams, Travis J; Poudel, Lekhanath N; Calder, Stuart A; Fishman, Randy Scott; Stone, Matthew B; Aczel, Adam A; Cao, Huibo; Lumsden, Mark D; Christianson, Andrew D

    2015-01-01

    We report elastic and inelastic neutron scattering measurements of the high-TC ferromagnet Mn(1+delta)Sb. Measurements were performed on a large, TC = 434 K, single crystal with interstitial Mn content of delta=0.13. The neutron diffraction results reveal that the interstitial Mn has a magnetic moment, and that it is aligned antiparallel to the main Mn moment. We perform density functional theory calculations including the interstitial Mn, and find the interstitial to be magnetic in agreement with the diffraction data. The inelastic neutron scattering measurements reveal two features in the magnetic dynamics: i) a spin-wave-like dispersion emanating from ferromagnetic Bragg positions (H K 2n), and ii) a broad, non-dispersive signal centered at forbidden Bragg positions (H K 2n+1). The inelastic spectrum cannot be modeled by simple linear spin-wave theory calculations, and appears to be significantly altered by the presence of the interstitial Mn ions. The results show that the influence of the int

  19. The magnetic structure of EuCu2Sb2

    SciTech Connect (OSTI)

    Ryan, D. H.; Cadogan, J. M.; Anand, V. K.; Johnston, D. C.; Flacau, R.

    2015-05-06

    Antiferromagnetic ordering of EuCu2Sb2 which forms in the tetragonal CaBe2Ge2-type structure (space group P4/nmm #129) has been studied using neutron powder diffraction and 151Eu Mössbauer spectroscopy. The room temperature 151Eu isomer shift of –12.8(1) mm/s shows the Eu to be divalent, while the 151Eu hyperfine magnetic field (Bhf) reaches 28.7(2) T at 2.1 K, indicating a full Eu2+ magnetic moment. Bhf(T) follows a smooth $S=\\frac{7}{2}$ Brillouin function and yields an ordering temperature of 5.1(1) K. Refinement of the neutron diffraction data reveals a collinear A-type antiferromagnetic arrangement with the Eu moments perpendicular to the tetragonal c-axis. As a result, the refined Eu magnetic moment at 0.4 K is 7.08(15) μB which is the full free-ion moment expected for the Eu2+ ion with $S=\\frac{7}{2}$ and a spectroscopic splitting factor of g = 2.

  20. Proton radiation effect on performance of InAs/GaSb complementary barrier infrared detector

    SciTech Connect (OSTI)

    Soibel, Alexander; Rafol, Sir B.; Khoshakhlagh, Arezou; Nguyen, Jean; Hoglund, Linda; Fisher, Anita M.; Keo, Sam. A.; Ting, David Z.-Y.; Gunapala, Sarath D.

    2015-12-28

    In this work, we investigated the effect of proton irradiation on the performance of long wavelength infrared InAs/GaSb photodiodes (λ{sub c} = 10.2 μm), based on the complementary barrier infrared detector design. We found that irradiation with 68 MeV protons causes a significant increase of the dark current from j{sub d} = 5 × 10{sup −5} A/cm{sup 2} to j{sub d} = 6 × 10{sup −3} A/cm{sup 2}, at V{sub b} = 0.1 V, T = 80 K and fluence 19.2 × 10{sup 11 }H{sup +}/cm{sup 2}. Analysis of the dark current as a function of temperature and bias showed that the dominant contributor to the dark current in these devices changes from diffusion current to tunneling current after proton irradiation. This change in the dark current mechanism can be attributed to the onset of surface leakage current, generated by trap-assisted tunneling processes in proton displacement damage areas located near the device sidewalls.

  1. CHARACTERIZATION OF VITRIFIED SAVANNAH RIVER SITE SB4 WASTE SURROGATE PRODUCED IN COLD CRUCIBLE

    SciTech Connect (OSTI)

    Marra, J

    2008-08-05

    Savannah River Site (SRS) sludge batch 4 (SB4) waste surrogate with high aluminum and iron content was vitrified with commercially available Frit 503-R4 (8 wt.% Li{sub 2}O, 16 wt.% B2O3, 76 wt.% SiO{sub 2}) by cold crucible inductive melting using lab- (56 mm inner diameter), bench- (236 mm) and large-scale (418 mm) cold crucible. The waste loading ranged between 40 and 60 wt.%. The vitrified products obtained in the lab-scale cold crucible were nearly amorphous with traces of unreacted quartz in the product with 40 wt.% waste loading and traces of spinel phase in the product with 50 wt.% waste loading. The glassy products obtained in the bench-scale cold crucible are composed of major vitreous and minor iron-rich spinel phase whose content at {approx}60 wt.% waste loading may achieve {approx}10 vol.%. The vitrified waste obtained in the large-scale cold crucible was also composed of major vitreous and minor spinel structure phases. No nepheline phase has been found. Average degree of crystallinity was estimated to be {approx}12 vol.%. Anionic motif of the glass network is built from rather short metasilicate chains and boron-oxygen constituent based on boron-oxygen triangular units.

  2. Nikon PTIPHOT-88 Optical Microscope

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    OPTIPHOT-88 Optical Microscope micro1.jpg (69171 bytes)

  3. Optical modulator including grapene

    DOE Patents [OSTI]

    Liu, Ming; Yin, Xiaobo; Zhang, Xiang

    2016-06-07

    The present invention provides for a one or more layer graphene optical modulator. In a first exemplary embodiment the optical modulator includes an optical waveguide, a nanoscale oxide spacer adjacent to a working region of the waveguide, and a monolayer graphene sheet adjacent to the spacer. In a second exemplary embodiment, the optical modulator includes at least one pair of active media, where the pair includes an oxide spacer, a first monolayer graphene sheet adjacent to a first side of the spacer, and a second monolayer graphene sheet adjacent to a second side of the spacer, and at least one optical waveguide adjacent to the pair.

  4. SLUDGE BATCH 5 ACCEPTANCE EVALUATION RADIONUCLIDE CONCENTRATIONS IN TANK 51 SB5 QUALIFICATION SAMPLE PREPARED AT SRNL

    SciTech Connect (OSTI)

    Bannochie, C; Ned Bibler, N; David Diprete, D

    2008-07-28

    Presented in this report are radionuclide concentrations required as part of the program of qualifying Sludge Batch Five (SB5) for processing in the Defense Waste Processing Facility (DWPF). Part of this SB5 material is currently in Tank 51 being washed and prepared for transfer to Tank 40. The acceptance evaluation needs to be completed prior to the transfer of the material in Tank 51 to Tank 40 to complete the formation of SB5. The sludge slurry in Tank 40 has already been qualified for DWPF and is currently being processed as SB4. The radionuclide concentrations were measured or estimated in the Tank 51 SB5 Qualification Sample prepared at Savannah River National Laboratory (SRNL). This sample was prepared from the three liter sample of Tank 51 sludge slurry taken on March 21, 2008. The sample was delivered to SRNL where it was initially characterized in the Shielded Cells. Under direction of the Liquid Waste Organization it was then modified by five washes, six decants, an addition of Pu/Be from Canyon Tank 16.4, and an addition of NaNO2. This final slurry now has a composition expected to be similar to that of the slurry in Tank 51 after final preparations have been made for transfer of that slurry to Ta Determining the radionuclide concentrations in this Tank 51 SB5 Qualification Sample is part of the work requested in Technical Task Request (TTR) No. HLW-DWPF-TTR-2008-0010. The work with this qualification sample is covered by a Task Technical and Quality Assurance Plan and an Analytical Study Plan. The radionuclides included in this report are needed for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria (TSR/WAC) Evaluation, and the DWPF Solid Waste Characterization Program (TTR Task 2). Radionuclides required to meet the Waste Acceptance Product Specifications (TTR Task 5) will be measured at a later date after the slurry from Tank 51 has been transferred to Tank 40. Then a sample of the as-processed SB5 will be taken and

  5. SLUDGE BATCH 6 ACCEPTANCE EVALUATION: RADIONUCLIDE CONCENTRATIONS IN TANK 51 SB6 QUALIFICATION SAMPLE PREPARED AT SRNL

    SciTech Connect (OSTI)

    Bannochie, C.; Bibler, N.; Diprete, D.

    2010-05-21

    Presented in this report are radionuclide concentrations required as part of the program of qualifying Sludge Batch Six (SB6) for processing in the Defense Waste Processing Facility (DWPF). The SB6 material is currently in Tank 51 being washed and prepared for transfer to Tank 40. The acceptance evaluation needs to be completed prior to the transfer of the material in Tank 51 to Tank 40. The sludge slurry in Tank 40 has already been qualified for DWPF and is currently being processed as SB5. The radionuclide concentrations were measured or estimated in the Tank 51 SB6 Qualification Sample prepared at Savannah River National Laboratory (SRNL). This sample was prepared from the three liter sample of Tank 51 sludge slurry (HTF-51-09-110) taken on October 8, 2009. The sample was delivered to SRNL where it was initially characterized in the Shielded Cells. Under the direction of the Liquid Waste Organization it was then modified by eight washes, nine decants, an addition of Pu from Canyon Tank 16.3, and an addition of NaNO{sub 2}. This final slurry now has a composition expected to be similar to that of the slurry in Tank 51 after final preparations have been made for transfer of that slurry to Tank 40. Determining the radionuclide concentrations in this Tank 51 SB6 Qualification Sample is part of the work requested in Technical Task Request (TTR) No. HLW-DWPF-TTR-2009-0014. The work with this qualification sample is covered by a Task Technical and Quality Assurance Plan and an Analytical Study Plan. The radionuclides included in this report are needed for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria (TSR/WAC) Evaluation, and the DWPF Solid Waste Characterization Program (TTR Task I.2). Radionuclides required to meet the Waste Acceptance Product Specifications (TTR Task II.2.) will be measured at a later date after the slurry from Tank 51 has been transferred to Tank 40. Then a sample of the as-processed SB6 will be taken and transferred

  6. Atmospheric Chemistry and Air Pollution

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gaffney, Jeffrey S.; Marley, Nancy A.

    2003-01-01

    Atmospheric chemistry is an important discipline for understanding air pollution and its impacts. This mini-review gives a brief history of air pollution and presents an overview of some of the basic photochemistry involved in the production of ozone and other oxidants in the atmosphere. Urban air quality issues are reviewed with a specific focus on ozone and other oxidants, primary and secondary aerosols, alternative fuels, and the potential for chlorine releases to amplify oxidant chemistry in industrial areas. Regional air pollution issues such as acid rain, long-range transport of aerosols and visibility loss, and the connections of aerosols to ozonemore » and peroxyacetyl nitrate chemistry are examined. Finally, the potential impacts of air pollutants on the global-scale radiative balances of gases and aerosols are discussed briefly.« less

  7. Fiber optic vibration sensor

    DOE Patents [OSTI]

    Dooley, J.B.; Muhs, J.D.; Tobin, K.W.

    1995-01-10

    A fiber optic vibration sensor utilizes two single mode optical fibers supported by a housing with one optical fiber fixedly secured to the housing and providing a reference signal and the other optical fiber having a free span length subject to vibrational displacement thereof with respect to the housing and the first optical fiber for providing a signal indicative of a measurement of any perturbation of the sensor. Damping or tailoring of the sensor to be responsive to selected levels of perturbation is provided by altering the diameter of optical fibers or by immersing at least a portion of the free span length of the vibration sensing optical fiber into a liquid of a selected viscosity. 2 figures.

  8. Fiber optic vibration sensor

    DOE Patents [OSTI]

    Dooley, Joseph B.; Muhs, Jeffrey D.; Tobin, Kenneth W.

    1995-01-01

    A fiber optic vibration sensor utilizes two single mode optical fibers supported by a housing with one optical fiber fixedly secured to the housing and providing a reference signal and the other optical fiber having a free span length subject to vibrational displacement thereof with respect to the housing and the first optical fiber for providing a signal indicative of a measurement of any perturbation of the sensor. Damping or tailoring of the sensor to be responsive to selected levels of perturbation is provided by altering the diameter of optical fibers or by immersing at least a portion of the free span length of the vibration sensing optical fiber into a liquid of a selected viscosity.

  9. Omnidirectional fiber optic tiltmeter

    DOE Patents [OSTI]

    Benjamin, B.C.; Miller, H.M.

    1983-06-30

    A tiltmeter is provided which is useful in detecting very small movements such as earth tides. The device comprises a single optical fiber, and an associated weight affixed thereto, suspended from a support to form a pendulum. A light source, e.g., a light emitting diode, mounted on the support transmits light through the optical fiber to a group of further optical fibers located adjacent to but spaced from the free end of the single optical fiber so that displacement of the single optical fiber with respect to the group will result in a change in the amount of light received by the individual optical fibers of the group. Photodetectors individually connectd to the fibers produce corresponding electrical outputs which are differentially compared and processed to produce a resultant continuous analog output representative of the amount and direction of displacement of the single optical fiber.

  10. Atmospheric-pressure plasma jet

    DOE Patents [OSTI]

    Selwyn, Gary S.

    1999-01-01

    Atmospheric-pressure plasma jet. A .gamma.-mode, resonant-cavity plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike plasma torches, the discharge produces a gas-phase effluent no hotter than 250.degree. C. at an applied power of about 300 W, and shows distinct non-thermal characteristics. In the simplest design, two concentric cylindrical electrodes are employed to generate a plasma in the annular region therebetween. A "jet" of long-lived metastable and reactive species that are capable of rapidly cleaning or etching metals and other materials is generated which extends up to 8 in. beyond the open end of the electrodes. Films and coatings may also be removed by these species. Arcing is prevented in the apparatus by using gas mixtures containing He, which limits ionization, by using high flow velocities, and by properly shaping the rf-powered electrode. Because of the atmospheric pressure operation, no ions survive for a sufficiently long distance beyond the active plasma discharge to bombard a workpiece, unlike low-pressure plasma sources and conventional plasma processing methods.

  11. Investigation of single-layer/multilayer self-assembled InAs quantum dots on GaAs{sub 1-x}Sb{sub x}/GaAs composite substrates

    SciTech Connect (OSTI)

    Tang, Dinghao; Kim, Yeongho Faleev, Nikolai; Honsberg, Christiana B.; Smith, David J.

    2015-09-07

    The structure-performance properties of single-layered and multi-layered InAs/GaAs{sub 1−x}Sb{sub x} quantum dot (QD) system, grown by molecular beam epitaxy on GaAs (001) substrates, have been investigated as a function of Sb concentration. Electron microscopy observations showed no significant crystalline defects for the single-layered InAs QDs (Sb 20%). X-ray diffraction analysis revealed that the increase of Sb concentration from 7.3% to 10.2% for the multi-layered QDs increased the strain relaxation from 0% to ∼23% and the dislocation density of GaAsSb layers went up to 3.6 × 10{sup 9 }cm{sup −2}. The peak energy of QD luminescence was red-shifted with increasing Sb concentration due to reduced strain inside QDs. Moreover, the carrier lifetime of the QDs was highly improved from 1.7 to 36.7 ns due to weak hole confinement as the Sb concentration was increased from 7.3% to 10.2%. These structures should be highly promising as the basis for photovoltaic solar-cell applications. Finally, the increased Sb concentration increased the thermal activation energy of electrons confined in the QDs from 163.7 to 206.8 meV, which was indicative of the improved thermal stability with Sb concentration.

  12. From thermoelectric bulk to nanomaterials: Current progress for Bi 2 Te 3 and CoSb 3: From thermoelectric bulk to nanomaterials

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Peranio, N.; Eibl, O.; Bäßler, S.; Nielsch, K.; Klobes, B.; Hermann, R. P.; Daniel, M.; Albrecht, M.; Görlitz, H.; Pacheco, V.; et al

    2015-10-29

    We synthesized Bi2Te3 and CoSb3 based nanomaterials and their thermoelectric, structural, and vibrational properties analyzed to assess and reduce ZT-limiting mechanisms. The same preparation and/or characterization methods were applied in the different materials systems. Single-crystalline, ternary p-type Bi15Sb29Te56, and n-type Bi38Te55Se7 nanowires with power factors comparable to nanostructured bulkmaterialswere prepared by potential-pulsed electrochemical deposition in a nanostructured Al2O3 matrix. p-type Sb2Te3, n-type Bi2Te3, and n-type CoSb3 thin films were grown at room temperature using molecular beam epitaxy and were subsequently annealed at elevated temperatures. It yielded polycrystalline, single phase thin films with optimized charge carrier densities. In CoSb3 thin filmsmore » the speed of sound could be reduced by filling the cage structure with Yb and alloying with Fe yielded p-type material. Bi2(Te0.91Se0.09)3/SiC and (Bi0.26Sb0.74)2Te3/SiC nanocomposites with low thermal conductivities and ZT values larger than 1 were prepared by spark plasma sintering. Nanostructure, texture, chemical composition, as well as electronic and phononic excitations were investigated by X-ray diffraction, nuclear resonance scattering, inelastic neutron scattering, M ossbauer spectroscopy, and transmission electron microscopy. Furthermore, for Bi2Te3 materials, ab-initio calculations together with equilibrium and non-equilibrium molecular dynamics simulations for point defects yielded their formation energies and their effect on lattice thermal conductivity, respectively. Current advances in thermoelectric Bi2Te3 and CoSb3 based nanomaterials are summarized. Advanced synthesis and characterization methods and theoreticalmodelingwere combined to assess and reduce ZT-limiting mechanisms in these materials.« less

  13. DEFRA Global Atmosphere Dept | Open Energy Information

    Open Energy Info (EERE)

    Kingdom Zip: SW1E 6DE Product: Atmosphere research department of the UK Department of Food and Rural Affairs. References: DEFRA - Global Atmosphere Dept.1 This article is a...

  14. Our Dusty Atmosphere | Department of Energy

    Energy Savers [EERE]

    Dusty Atmosphere Our Dusty Atmosphere September 6, 2011 - 4:26pm Addthis A heavy layer of air pollution, a mix of aerosol particles and vapors, obscures the view over Mexico City. ...

  15. Quantitative determination of atmospheric hydroperoxyl radical

    DOE Patents [OSTI]

    Springston, Stephen R.; Lloyd, Judith; Zheng, Jun

    2007-10-23

    A method for the quantitative determination of atmospheric hydroperoxyl radical comprising: (a) contacting a liquid phase atmospheric sample with a chemiluminescent compound which luminesces on contact with hydroperoxyl radical; (b) determining luminescence intensity from the liquid phase atmospheric sample; and (c) comparing said luminescence intensity from the liquid phase atmospheric sample to a standard luminescence intensity for hydroperoxyl radical. An apparatus for automating the method is also included.

  16. Radar range measurements in the atmosphere.

    SciTech Connect (OSTI)

    Doerry, Armin Walter

    2013-02-01

    The earth's atmosphere affects the velocity of propagation of microwave signals. This imparts a range error to radar range measurements that assume the typical simplistic model for propagation velocity. This range error is a function of atmospheric constituents, such as water vapor, as well as the geometry of the radar data collection, notably altitude and range. Models are presented for calculating atmospheric effects on radar range measurements, and compared against more elaborate atmospheric models.

  17. Composition and Reactions of Atmospheric Aerosol Particles

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Reactions of Atmospheric Aerosol Particles Print Microscopic aerosol particles in the atmosphere contain carbonaceous components from mineral dust and combustion emissions released from around the world. How long these tiny particles remain in the atmosphere can have a huge impact on the global climate. Measurements based on high-resolution scanning transmission x-ray images obtained at the ALS have revealed chemical reactions on and in atmospheric aerosol particles that caused

  18. Composition and Reactions of Atmospheric Aerosol Particles

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Reactions of Atmospheric Aerosol Particles Print Microscopic aerosol particles in the atmosphere contain carbonaceous components from mineral dust and combustion emissions released from around the world. How long these tiny particles remain in the atmosphere can have a huge impact on the global climate. Measurements based on high-resolution scanning transmission x-ray images obtained at the ALS have revealed chemical reactions on and in atmospheric aerosol particles that caused

  19. Atmospheric Dispersion Modeling in Safety Analyses; GENII

    Office of Environmental Management (EM)

    Atmosphere to Electrons Enabling the Wind Plant of Tomorrow 2 Atmosphere to Electrons Enabling the Wind Plant of Tomorrow The U.S. Department of Energy's (DOE's) Atmosphere to Electrons (A2e) research initiative is focused on improving the performance and reliability of wind plants by establishing an unprecedented under- standing of how the Earth's atmosphere interacts with the wind plants and developing innovative technologies to maximize energy extraction from the wind. The A2e initiative

  20. Composition and Reactions of Atmospheric Aerosol Particles

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Reactions of Atmospheric Aerosol Particles Print Microscopic aerosol particles in the atmosphere contain carbonaceous components from mineral dust and combustion emissions released from around the world. How long these tiny particles remain in the atmosphere can have a huge impact on the global climate. Measurements based on high-resolution scanning transmission x-ray images obtained at the ALS have revealed chemical reactions on and in atmospheric aerosol particles that caused

  1. Composition and Reactions of Atmospheric Aerosol Particles

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Reactions of Atmospheric Aerosol Particles Print Microscopic aerosol particles in the atmosphere contain carbonaceous components from mineral dust and combustion emissions released from around the world. How long these tiny particles remain in the atmosphere can have a huge impact on the global climate. Measurements based on high-resolution scanning transmission x-ray images obtained at the ALS have revealed chemical reactions on and in atmospheric aerosol particles that caused

  2. Composition and Reactions of Atmospheric Aerosol Particles

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Reactions of Atmospheric Aerosol Particles Print Microscopic aerosol particles in the atmosphere contain carbonaceous components from mineral dust and combustion emissions released from around the world. How long these tiny particles remain in the atmosphere can have a huge impact on the global climate. Measurements based on high-resolution scanning transmission x-ray images obtained at the ALS have revealed chemical reactions on and in atmospheric aerosol particles that caused

  3. Composition and Reactions of Atmospheric Aerosol Particles

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Reactions of Atmospheric Aerosol Particles Composition and Reactions of Atmospheric Aerosol Particles Print Wednesday, 29 June 2005 00:00 Microscopic aerosol particles in the atmosphere contain carbonaceous components from mineral dust and combustion emissions released from around the world. How long these tiny particles remain in the atmosphere can have a huge impact on the global climate. Measurements based on high-resolution scanning transmission x-ray images obtained at the

  4. W.-C. Wang X.-Z. Liang M. D. Dudek S. Cox Atmospheric Sciences Research Center

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Wang X.-Z. Liang M. D. Dudek S. Cox Atmospheric Sciences Research Center State University of New York 100 Fuller Road Albany, NY 12205 We participate in the Atmospheric Radiation Measurement (ARM) program with two objectives: 1) to improve the general circulation model (GCM) cloud/radiation treatment with focus on cloud overlapping and the cloud optical properties and 2) to study the effects of cloud/radiation-climate interaction on climate simulations. The project includes three tasks: 1) GCM

  5. Phase equilibria, formation, crystal and electronic structure of ternary compounds in Ti-Ni-Sn and Ti-Ni-Sb ternary systems

    SciTech Connect (OSTI)

    Romaka, V.V.; Rogl, P.; Romaka, L.; Stadnyk, Yu.; Melnychenko, N.; Grytsiv, A.; Falmbigl, M.; Skryabina, N.

    2013-01-15

    The phase equilibria of the Ti-Ni-Sn and Ti-Ni-Sb ternary systems have been studied in the whole concentration range by means of X-ray and EPM analyses at 1073 K and 873 K, respectively. Four ternary intermetallic compounds TiNiSn (MgAgAs-type), TiNi{sub 2-x}Sn (MnCu{sub 2}Al-type), Ti{sub 2}Ni{sub 2}Sn (U{sub 2}Pt{sub 2}Sn-type), and Ti{sub 5}NiSn{sub 3} (Hf{sub 5}CuSn{sub 3}-type) are formed in Ti-Ni-Sn system at 1073 K. The TiNi{sub 2}Sn stannide is characterized by homogeneity in the range of 50-47 at% of Ni. The Ti-Ni-Sb ternary system at 873 K is characterized by formation of three ternary intermetallic compounds, Ti{sub 0.8}NiSb (MgAgAs-type), Ti{sub 5}Ni{sub 0.45}Sb{sub 2.55} (W{sub 5}Si{sub 3}-type), and Ti{sub 5}NiSb{sub 3} (Hf{sub 5}CuSn{sub 3}-type). The solubility of Ni in Ti{sub 0.8}NiSb decreases number of vacancies in Ti site up to Ti{sub 0.91}Ni{sub 1.1}Sb composition. - Graphical abstract: Isothermal section of the Ti-Ni-Sn phase diagram and DOS distribution in hypothetical TiNi{sub 1+x}Sn solid solution. Highlights: Black-Right-Pointing-Pointer Ti-Ni-Sn phase diagram was constructed at 1073 K. Black-Right-Pointing-Pointer Four ternary compounds are formed: TiNiSn, TiNi{sub 2-x}Sn, Ti{sub 2}Ni{sub 2}Sn, and Ti{sub 5}NiSn{sub 3}. Black-Right-Pointing-Pointer Three ternary compounds exist in Ti-Ni-Sb system at 873 K. Black-Right-Pointing-Pointer The TiNi{sub 2}Sb compound is absent.

  6. Stable microwave coaxial cavity plasma system at atmospheric pressure

    SciTech Connect (OSTI)

    Song, H. [Department of Electrical and Computer Engineering, University of Colorado, Colorado Springs, Colorado 80918 (United States); Hong, J. M.; Lee, K. H. [Plasma Systems and Materials (PSM) Inc., Sungnam-Si, Gyonggi-Do 190-1 (Korea, Republic of); Choi, J. J. [Department of Radio Science and Engineering, Kwangwoon University, Nowon-Gu, Seoul 447-1 (Korea, Republic of)

    2008-05-15

    We present a systematic study of the development of a novel atmospheric microwave plasma system for material processing in the pressure range up to 760 torr and the microwave input power up to 6 kW. Atmospheric microwave plasma was reliably produced and sustained by using a cylindrical resonator with the TM{sub 011} cavity mode. The applicator and the microwave cavity, which is a cylindrical resonator, are carefully designed and optimized with the time dependent finite element Maxwell equation solver. The azimuthal apertures are placed at the maximum magnetic field positions between the cavity and the applicator to maximize the coupling efficiency into the microwave plasma at a resonant frequency of 2.45 GHz. The system consists of a magnetron power supply, a circulator, a directional coupler, a three-stub tuner, a dummy load, a coaxial cavity, and a central cavity. Design and construction of the resonant structures and diagnostics of atmospheric plasma using optical experiments are discussed in various ranges of pressure and microwave input power for different types of gases.

  7. Atmospheric characterization of the hot Jupiter Kepler-13Ab

    SciTech Connect (OSTI)

    Shporer, Avi; O'Rourke, Joseph G.; Knutson, Heather A.; Szab, Gyula M.; Zhao, Ming; Burrows, Adam; Fortney, Jonathan; Agol, Eric; Cowan, Nicolas B.; Desert, Jean-Michel; Howard, Andrew W.; Isaacson, Howard; Lewis, Nikole K.; Showman, Adam P.; Todorov, Kamen O.

    2014-06-10

    Kepler-13Ab (= KOI-13.01) is a unique transiting hot Jupiter. It is one of very few known short-period planets orbiting a hot A-type star, making it one of the hottest planets currently known. The availability of Kepler data allows us to measure the planet's occultation (secondary eclipse) and phase curve in the optical, which we combine with occultations observed by warm Spitzer at 4.5 ?m and 3.6 ?m and a ground-based occultation observation in the K{sub s} band (2.1 ?m). We derive a day-side hemisphere temperature of 2750 160 K as the effective temperature of a black body showing the same occultation depths. Comparing the occultation depths with one-dimensional planetary atmosphere models suggests the presence of an atmospheric temperature inversion. Our analysis shows evidence for a relatively high geometric albedo, A {sub g} = 0.33{sub ?0.06}{sup +0.04}. While measured with a simplistic method, a high A {sub g} is supported also by the fact that the one-dimensional atmosphere models underestimate the occultation depth in the optical. We use stellar spectra to determine the dilution, in the four wide bands where occultation was measured, due to the visual stellar binary companion 1.''15 0.''05 away. The revised stellar parameters measured using these spectra are combined with other measurements, leading to revised planetary mass and radius estimates of M{sub p} = 4.94-8.09 M {sub J} and R{sub p} = 1.406 0.038 R {sub J}. Finally, we measure a Kepler midoccultation time that is 34.0 6.9 s earlier than expected based on the midtransit time and the delay due to light-travel time and discuss possible scenarios.

  8. High quality HfO{sub 2}/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8?nm equivalent oxide thickness

    SciTech Connect (OSTI)

    Barth, Michael; Datta, Suman; Bruce Rayner, G.; McDonnell, Stephen; Wallace, Robert M.; Bennett, Brian R.; Engel-Herbert, Roman

    2014-12-01

    We investigate in-situ cleaning of GaSb surfaces and its effect on the electrical performance of p-type GaSb metal-oxide-semiconductor capacitor (MOSCAP) using a remote hydrogen plasma. Ultrathin HfO{sub 2} films grown by atomic layer deposition were used as a high permittivity gate dielectric. Compared to conventional ex-situ chemical cleaning methods, the in-situ GaSb surface treatment resulted in a drastic improvement in the impedance characteristics of the MOSCAPs, directly evidencing a much lower interface trap density and enhanced Fermi level movement efficiency. We demonstrate that by using a combination of ex-situ and in-situ surface cleaning steps, aggressively scaled HfO{sub 2}/p-GaSb MOSCAP structures with a low equivalent oxide thickness of 0.8?nm and efficient gate modulation of the surface potential are achieved, allowing to push the Fermi level far away from the valence band edge high up into the band gap of GaSb.

  9. Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

    SciTech Connect (OSTI)

    Zhu, Y.; Jain, N.; Hudait, M. K.; Mohata, D. K.; Datta, S.; Lubyshev, D.; Fastenau, J. M.; Liu, A. K.

    2012-09-10

    The structural properties and band offset determination of p-channel staggered gap In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} heterostructure tunnel field-effect transistor (TFET) grown by molecular beam epitaxy (MBE) were investigated. High resolution x-ray diffraction revealed that the active layers are strained with respect to 'virtual substrate.' Dynamic secondary ion mass spectrometry confirmed an abrupt junction profile at the In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} heterointerface and minimal level of intermixing between As and Sb atoms. The valence band offset of 0.37 {+-} 0.05 eV was extracted from x-ray photoelectron spectroscopy. A staggered band lineup was confirmed at the heterointerface with an effective tunneling barrier height of 0.13 eV. Thus, MBE-grown staggered gap In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} TFET structures are a promising p-channel option to provide critical guidance for the future design of mixed As/Sb type-II based complementary logic and low power devices.

  10. Transpiration purged optical probe

    DOE Patents [OSTI]

    2004-01-06

    An optical apparatus for clearly viewing the interior of a containment vessel by applying a transpiration fluid to a volume directly in front of the external surface of the optical element of the optical apparatus. The fluid is provided by an external source and transported by means of an annular tube to a capped end region where the inner tube is perforated. The perforation allows the fluid to stream axially towards the center of the inner tube and then axially away from an optical element which is positioned in the inner tube just prior to the porous sleeve. This arrangement draws any contaminants away from the optical element keeping it free of contaminants. In one of several embodiments, the optical element can be a lens, a viewing port or a laser, and the external source can provide a transpiration fluid having either steady properties or time varying properties.

  11. Multichannel optical sensing device

    DOE Patents [OSTI]

    Selkowitz, S.E.

    1985-08-16

    A multichannel optical sensing device is disclosed, for measuring the outdoor sky luminance or illuminance or the luminance or illuminance distribution in a room, comprising a plurality of light receptors, an optical shutter matrix including a plurality of liquid crystal optical shutter elements operable by electrical control signals between light transmitting and light stopping conditions, fiber optical elements connected between the receptors and the shutter elements, a microprocessor based programmable control unit for selectively supplying control signals to the optical shutter elements in a programmable sequence, a photodetector including an optical integrating spherical chamber having an input port for receiving the light from the shutter matrix and at least one detector element in the spherical chamber for producing output signals corresponding to the light, and output units for utilizing the output signals including a storage unit having a control connection to the microprocessor based programmable control unit for storing the output signals under the sequence control of the programmable control unit.

  12. Multichannel optical sensing device

    DOE Patents [OSTI]

    Selkowitz, Stephen E.

    1990-01-01

    A multichannel optical sensing device is disclosed, for measuring the outr sky luminance or illuminance or the luminance or illuminance distribution in a room, comprising a plurality of light receptors, an optical shutter matrix including a plurality of liquid crystal optical shutter elements operable by electrical control signals between light transmitting and light stopping conditions, fiber optic elements connected between the receptors and the shutter elements, a microprocessor based programmable control unit for selectively supplying control signals to the optical shutter elements in a programmable sequence, a photodetector including an optical integrating spherical chamber having an input port for receiving the light from the shutter matrix and at least one detector element in the spherical chamber for producing output signals corresponding to the light, and output units for utilizing the output signals including a storage unit having a control connection to the microprocessor based programmable control unit for storing the output signals under the sequence control of the programmable control unit.

  13. Images reveal that atmospheric particles can undergo liquid-liquid phase separations

    SciTech Connect (OSTI)

    You, Yuan; Renbaum-Wolff, Lindsay; Carreras-Sospedra, Marc; Hanna, Sarah; Hiranuma, Naruki; Kamal, Saeid; Smith, Mackenzie L.; Zhang, Xiaolu; Weber, Rodney; Shilling, John E.; Dabdub, Donald; Martin, Scot T.; Bertram, Allan K.

    2012-07-30

    A large fraction of submicron atmospheric particles contains both organic material and inorganic salts. As the relative humidity cycles in the atmosphere, these mixed particles can undergo a range of phase transitions, possibly including liquid-liquid phase separation. If liquid-liquid phase separation occurs, the gas-particle partitioning of atmospheric semi-volatile organic compounds, the scattering and absorption of solar radiation, and the uptake of reactive gas species on atmospheric particles will be affected, with important implications for climate predictions. The actual occurrence of these types of phase transitions within individual atmospheric particles has been considered uncertain, in large part because of the absence of observations for real-world samples. Here, using optical and fluorescence microscopy, we observe the coexistence of two non-crystalline phases in particles generated from real-world samples collected on multiple days in Atlanta, Georgia, and in particles generated in the laboratory using atmospheric conditions. These results reveal that atmospheric particles can undergo liquid-liquid phase separations. Using a box model, we show that liquid-liquid phase separation can result in increased concentrations of gas-phase NO3 and N2O5 in the Atlanta region, due to decreased particle uptake of N2O5.

  14. Optical atomic magnetometer

    DOE Patents [OSTI]

    Budker, Dmitry; Higbie, James; Corsini, Eric P

    2013-11-19

    An optical atomic magnetometers is provided operating on the principles of nonlinear magneto-optical rotation. An atomic vapor is optically pumped using linearly polarized modulated light. The vapor is then probed using a non-modulated linearly polarized light beam. The resulting modulation in polarization angle of the probe light is detected and used in a feedback loop to induce self-oscillation at the resonant frequency.

  15. Compound semiconductor optical waveguide switch

    DOE Patents [OSTI]

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  16. Atmospheric Science Program (ASP) Data Archive () | Data Explorer

    Office of Scientific and Technical Information (OSTI)

    Atmospheric Science Program (ASP) Data Archive Title: Atmospheric Science Program (ASP) Data Archive The Department of Energy's Atmospheric Science Program (ASP) originally ...

  17. Prismatic optical display

    DOE Patents [OSTI]

    Veligdan, James T.; DeSanto, Leonard; Brewster, Calvin

    2004-06-29

    A spatially modulated light beam is projected, reflected, and redirected through a prismatic optical panel to form a video image for direct viewing thereon.

  18. Optical amplifiers and lasers

    DOE Patents [OSTI]

    Klimov, Victor I.; Mikhailovski, Alexandre; Hollingsworth, Jennifer A.; Leatherdale, Catherine A.; Bawendi, Moungi G.

    2004-11-16

    An optical amplifier and laser having both broad band and wide range specific band capability can be based on semiconductor nanocrystal solids.

  19. Optical limiting materials

    DOE Patents [OSTI]

    McBranch, Duncan W.; Mattes, Benjamin R.; Koskelo, Aaron C.; Heeger, Alan J.; Robinson, Jeanne M.; Smilowitz, Laura B.; Klimov, Victor I.; Cha, Myoungsik; Sariciftci, N. Serdar; Hummelen, Jan C.

    1998-01-01

    Optical limiting materials. Methanofullerenes, fulleroids and/or other fullerenes chemically altered for enhanced solubility, in liquid solution, and in solid blends with transparent glass (SiO.sub.2) gels or polymers, or semiconducting (conjugated) polymers, are shown to be useful as optical limiters (optical surge protectors). The nonlinear absorption is tunable such that the energy transmitted through such blends saturates at high input energy per pulse over a wide range of wavelengths from 400-1100 nm by selecting the host material for its absorption wavelength and ability to transfer the absorbed energy into the optical limiting composition dissolved therein. This phenomenon should be generalizable to other compositions than substituted fullerenes.

  20. Optical contact micrometer

    DOE Patents [OSTI]

    Jacobson, Steven D.

    2014-08-19

    Certain examples provide optical contact micrometers and methods of use. An example optical contact micrometer includes a pair of opposable lenses to receive an object and immobilize the object in a position. The example optical contact micrometer includes a pair of opposable mirrors positioned with respect to the pair of lenses to facilitate viewing of the object through the lenses. The example optical contact micrometer includes a microscope to facilitate viewing of the object through the lenses via the mirrors; and an interferometer to obtain one or more measurements of the object.

  1. A TRANSMISSION SPECTRUM OF TITAN'S NORTH POLAR ATMOSPHERE FROM A SPECULAR REFLECTION OF THE SUN

    SciTech Connect (OSTI)

    Barnes, Jason W.; Clark, Roger N.; Sotin, Christophe; Buratti, Bonnie J.; dmkovics, Mt; Appr, Thomas; Rodriguez, Sebastien; Brown, Robert H.; Baines, Kevin H.; Le Moulic, Stphane; Nicholson, Philip D.

    2013-11-10

    Cassini/VIMS T85 observations of a solar specular reflection off of Kivu Lacus (87.4N 241.1E) provide an empirical transmission spectrum of Titan's atmosphere. Because this observation was acquired from short range (33,000 km), its intensity makes it visible within the 2.0, 2.7, and 2.8 ?m atmospheric windows in addition to the 5 ?m window where all previous specular reflections have been seen. The resulting measurement of the total one-way normal atmospheric optical depth (corresponding to haze scattering plus haze and gas absorption) provides strong empirical constraints on radiative transfer models. Using those models, we find that the total haze column abundance in our observation is 20% higher than the Huygens equatorial value. Ours is the first measurement in the 2-5 ?m wavelength range that probes all the way to the surface in Titan's arctic, where the vast majority of surface liquids are located. The specular technique complements other probes of atmospheric properties such as solar occultations and the direct measurements from Huygens. In breaking the degeneracy between surface and atmospheric absorptions, our measured optical depths will help to drive future calculations of deconvolved surface albedo spectra.

  2. Improved determination of the atmospheric parameters of the pulsating sdB star Feige 48

    SciTech Connect (OSTI)

    Latour, M.; Fontaine, G.; Brassard, P.; Green, E. M.; Chayer, P.

    2014-06-10

    As part of a multifaceted effort to better exploit the asteroseismological potential of the pulsating sdB star Feige 48, we present an improved spectroscopic analysis of that star based on new grids of NLTE, fully line-blanketed model atmospheres. To that end, we gathered four high signal-to-noise ratio time-averaged optical spectra of varying spectral resolutions from 1.0 to 8.7 , and we made use of the results of four independent studies to fix the abundances of the most important metals in the atmosphere of Feige 48. The mean atmospheric parameters we obtained from our four spectra of Feige 48 are: T {sub eff} = 29,850 60 K, log g = 5.46 0.01, and log N(He)/N(H) = 2.88 0.02. We also modeled, for the first time, the He II line at 1640 from the STIS archive spectrum of the star, and with this line we found an effective temperature and a surface gravity that match well with the values obtained with the optical data. With some fine tuning of the abundances of the metals visible in the optical domain, we were able to achieve a very good agreement between our best available spectrum and our best-fitting synthetic one. Our derived atmospheric parameters for Feige 48 are in rather good agreement with previous estimates based on less sophisticated models. This underlines the relatively small effects of the NLTE approach combined with line blanketing in the atmosphere of this particular star, implying that the current estimates of the atmospheric parameters of Feige 48 are reliable and secure.

  3. Regional Ecosystem-Atmosphere CO2 Exchange Via Atmospheric Budgets

    SciTech Connect (OSTI)

    Davis, K.J.; Richardson, S.J.; Miles, N.L.

    2007-03-07

    Inversions of atmospheric CO2 mixing ratio measurements to determine CO2 sources and sinks are typically limited to coarse spatial and temporal resolution. This limits our ability to evaluate efforts to upscale chamber- and stand-level CO2 flux measurements to regional scales, where coherent climate and ecosystem mechanisms govern the carbon cycle. As a step towards the goal of implementing atmospheric budget or inversion methodology on a regional scale, a network of five relatively inexpensive CO2 mixing ratio measurement systems was deployed on towers in northern Wisconsin. Four systems were distributed on a circle of roughly 150-km radius, surrounding one centrally located system at the WLEF tower near Park Falls, WI. All measurements were taken at a height of 76 m AGL. The systems used single-cell infrared CO2 analyzers (Licor, model LI-820) rather than the siginificantly more costly two-cell models, and were calibrated every two hours using four samples known to within 0.2 ppm CO2. Tests prior to deployment in which the systems sampled the same air indicate the precision of the systems to be better than 0.3 ppm and the accuracy, based on the difference between the daily mean of one system and a co-located NOAA-ESRL system, is consistently better than 0.3 ppm. We demonstrate the utility of the network in two ways. We interpret regional CO2 differences using a Lagrangian parcel approach. The difference in the CO2 mixing ratios across the network is at least 2?3 ppm, which is large compared to the accuracy and precision of the systems. Fluxes estimated assuming Lagrangian parcel transport are of the same sign and magnitude as eddy-covariance flux measurements at the centrally-located WLEF tower. These results indicate that the network will be useful in a full inversion model. Second, we present a case study involving a frontal passage through the region. The progression of a front across the network is evident; changes as large as four ppm in one minute are

  4. Cyclotron resonance in InAs/AlSb quantum wells in magnetic fields up to 45 T

    SciTech Connect (OSTI)

    Spirin, K. E. Krishtopenko, S. S.; Sadofyev, Yu. G.; Drachenko, O.; Helm, M.; Teppe, F.; Knap, W.; Gavrilenko, V. I.

    2015-12-15

    Electron cyclotron resonance in InAs/AlSb heterostructures with quantum wells of various widths in pulsed magnetic fields up to 45 T are investigated. Our experimental cyclotron energies are in satisfactory agreement with the results of theoretical calculations performed using the eight-band kp Hamiltonian. The shift of the cyclotron resonance (CR) line, which corresponds to the transition from the lowest Landau level to the low magnetic-field region, is found upon varying the electron concentration due to the negative persistent photoconductivity effect. It is shown that the observed shift of the CR lines is associated with the finite width of the density of states at the Landau levels.

  5. Excitonic transitions in highly efficient (GaIn)As/Ga(AsSb) type-II quantum-well structures

    SciTech Connect (OSTI)

    Gies, S.; Kruska, C.; Berger, C.; Hens, P.; Fuchs, C.; Rosemann, N. W.; Veletas, J.; Stolz, W.; Koch, S. W.; Heimbrodt, W.; Ruiz Perez, A.; Hader, J.; Moloney, J. V.

    2015-11-02

    The excitonic transitions of the type-II (GaIn)As/Ga(AsSb) gain medium of a “W”-laser structure are characterized experimentally by modulation spectroscopy and analyzed using microscopic quantum theory. On the basis of the very good agreement between the measured and calculated photoreflectivity, the type-I or type-II character of the observable excitonic transitions is identified. Whereas the energetically lowest three transitions exhibit type-II character, the subsequent energetically higher transitions possess type-I character with much stronger dipole moments. Despite the type-II character, the quantum-well structure exhibits a bright luminescence.

  6. Atmospheric corrosion of lithium electrodes

    SciTech Connect (OSTI)

    Johnson, C.J.

    1981-10-01

    Atmospheric corrosion of lithium during lithium-cell assembly and the dry storage of cells prior to electrolyte fill has been found to initiate lithium corrosion pits and to form corrosion products. Scanning Electron Microscopy (SEM) was used to investigate lithium pitting and the white floccullent corrosion products. Electron Spectroscopy for Chemical Analysis (ESCA) and Auger spectroscopy in combination with X-ray diffraction were used to characterize lithium surfaces. Lithium surfaces with corrosion products were found to be high in carbonate content indicating the presence of lithium carbonate. Lithium electrodes dry stored in unfilled batteries were found to contain high concentration of lithium flouride a possible corrosion product from gaseous materials from the carbon monofluoride cathode. Future investigations of the corrosion phenomena will emphasize the effect of the corrosion products on the electrolyte and ultimate battery performance. The need to protect lithium electrodes from atmospheric exposure is commonly recognized to minimize corrosion induced by reaction with water, oxygen, carbon dioxide or nitrogen (1). Manufacturing facilities customarily limit the relative humidity to less than two percent. Electrodes that have been manufactured for use in lithium cells are typically stored in dry-argon containers. In spite of these precautions, lithium has been found to corrode over a long time period due to residual gases or slow diffusion of the same into storage containers. The purpose of this investigation was to determine the nature of the lithium corrosion.

  7. Calculation of the electron spin relaxation times in InSb and InAs by the projection-reduction method

    SciTech Connect (OSTI)

    Kang, Nam Lyong

    2014-12-07

    The electron spin relaxation times in a system of electrons interacting with piezoelectric phonons mediated through spin-orbit interactions were calculated using the formula derived from the projection-reduction method. The results showed that the temperature and magnetic field dependence of the relaxation times in InSb and InAs were similar. The piezoelectric material constants obtained by a comparison with the reported experimental result were P{sub pe}=4.0×10{sup 22} eV/m for InSb and P{sub pe}=1.2×10{sup 23} eV/m for InAs. The result also showed that the relaxation of the electron spin by the Elliot-Yafet process is more relevant for InSb than InAs at a low density.

  8. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect (OSTI)

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  9. Growth and transport properties of epitaxial lattice matched half Heusler CoTiSb/InAlAs/InP(001) heterostructures

    SciTech Connect (OSTI)

    Kawasaki, Jason K.; Johansson, Linda I. M.; Schultz, Brian D.; Palmstrm, Chris J.

    2014-01-13

    We demonstrate the integration of the lattice matched single crystal epitaxial Half Heusler compound CoTiSb with In{sub 0.52}Al{sub 0.48}As/InP(001) heterostructures using molecular beam epitaxy. CoTiSb belongs to the subset of Half Heusler compounds that is expected to be semiconducting, despite being composed entirely of metallic constituents. The lattice matching and epitaxial alignment of the CoTiSb films were confirmed by reflection high energy electron diffraction and X-ray diffraction. Temperature dependent transport measurements indicate semiconducting-like behavior, with a room temperature Hall mobility of 530 cm{sup 2}/Vs and background Hall carrier density of 9.0??10{sup 17}?cm{sup ?3}, which is comparable to n-Si with similar carrier density. Below 100?K, the films show a large negative magnetoresistance, and possible origins of this negative magnetoresistance are discussed.

  10. Influence of Sn on the thermoelectric properties of (Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals

    SciTech Connect (OSTI)

    Kulbachinskii, V.A.; Kytin, V.G.; Kudryashov, A.A.; Lunin, R.A.

    2012-09-15

    The influence of tin on the thermoelectric properties of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals (x=0; 0.25; 0.5) has been investigated. The temperature dependence of the Seebeck coefficient S, the electrical conductivity {sigma}, the heat conductivity k and the thermoelectric figure of merit of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals were measured in the temperature range 7-300 K. By an increase the Sn content, the hole concentration increases in p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3}. The heat conductivity k of the p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} crystals decreases due to the Sn doping, while the electrical conductivity {sigma} increases in the temperature interval about 200Sb{sub 1-x}){sub 2}Te{sub 3} single crystals (x=0; 0.25; 0.5) has been investigated. Temperature dependence of Seebeck coefficient S, electrical conductivity {sigma}, thermal conductivity k and figure of merit of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals were measured in the temperature range 7-300 K. Electrical conductivity increases in the temperature interval 150KSb{sub 1-x}){sub 2}Te{sub 3} as shown in figure. By increasing the Sn content, the hole concentration increases in p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3}. The thermal conductivity k of the p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} crystals decreases due to Sn doping. The Seebeck coefficient S for all compositions is positive and decreases due

  11. Anisotropic magnetization and transport properties of RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm)

    SciTech Connect (OSTI)

    Myers, Kenneth D.

    1999-11-08

    This study of the RAgSb{sub 2} series of compounds arose as part of an investigation of rare earth intermetallic compounds containing antimony with the rare earth in a position with tetragonal point symmetry. Materials with the rare earth in a position with tetragonal point symmetry frequently manifest strong anisotropies and rich complexity in the magnetic properties, and yet are simple enough to analyze. Antimony containing intermetallic compounds commonly possess low carrier densities and have only recently been the subject of study. Large single grain crystals were grown of the RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm) series of compounds out of a high temperature solution. This method of crystal growth, commonly known as flux growth is a versatile method which takes advantage of the decreasing solubility of the target compound with decreasing temperature. Overall, the results of the crystal growth were impressive with the synthesis of single crystals of LaAgSb{sub 2} approaching one gram. However, the sample yield diminishes as the rare earth elements become smaller and heavier. Consequently, no crystals could be grown with R=Yb or Lu. Furthermore, EuAgSb{sub 2} could not be synthesized, likely due to the divalency of the Eu ion. For most of the RAgSb{sub 2} compounds, strong magnetic anisotropies are created by the crystal electric field splitting of the Hund's rule ground state. This splitting confines the local moments to lie in the basal plane (easy plane) for the majority of the members of the series. Exceptions to this include ErAgSb{sub 2} and TmAgSb{sub 2}, which have moments along the c-axis (easy axis) and CeAgSb{sub 2}, which at intermediate temperatures has an easy plane, but exchange coupling at low temperatures is anisotropic with an easy axis. Additional anisotropy is also observed within the basal plane of DyAgSb{sub 2}, where the moments are restricted to align along one of the {l_angle}110{r_angle} axes. Most of the RAgSb{sub 2} compounds

  12. Multimode optical fiber

    DOE Patents [OSTI]

    Bigot-Astruc, Marianne; Molin, Denis; Sillard, Pierre

    2014-11-04

    A depressed graded-index multimode optical fiber includes a central core, an inner depressed cladding, a depressed trench, an outer depressed cladding, and an outer cladding. The central core has an alpha-index profile. The depressed claddings limit the impact of leaky modes on optical-fiber performance characteristics (e.g., bandwidth, core size, and/or numerical aperture).

  13. Flexible optical panel

    DOE Patents [OSTI]

    Veligdan, James T.

    2001-01-01

    A flexible optical panel includes laminated optical waveguides, each including a ribbon core laminated between cladding, with the core being resilient in the plane of the core for elastically accommodating differential movement thereof to permit winding of the panel in a coil.

  14. Stepped inlet optical panel

    DOE Patents [OSTI]

    Veligdan, James T.

    2001-01-01

    An optical panel includes stacked optical waveguides having stepped inlet facets collectively defining an inlet face for receiving image light, and having beveled outlet faces collectively defining a display screen for displaying the image light channeled through the waveguides by internal reflection.

  15. XrayOpticsConstants

    Energy Science and Technology Software Center (OSTI)

    2005-06-20

    This application (XrayOpticsConstants) is a tool for displaying X-ray and Optical properties for a given material, x-ray photon energy, and in the case of a gas, pressure. The display includes fields such as the photo-electric absorption attenuation length, density, material composition, index of refraction, and emission properties (for scintillator materials).

  16. Dual frequency optical cavity

    DOE Patents [OSTI]

    George, E. Victor; Schipper, John F.

    1985-01-01

    Method and apparatus for generating two distinct laser frequencies in an optical cavity, using a "T" configuration laser cavity and means for intermittently increasing or decreasing the index of refraction n of an associated transmission medium in one arm of the optical cavity to enhance laser action in one arm or the second arm of the cavity.

  17. Dual frequency optical cavity

    DOE Patents [OSTI]

    George, E.V.; Schipper, J.F.

    Method and apparatus for generating two distinct laser frequencies in an optical cavity, using a T configuration laser cavity and means for intermittently increasing or decreasing the index of refraction n of an associated transmission medium in one arm of the optical cavity to enhance laser action in one arm or the second arm of the cavity.

  18. Optical scanning apparatus

    DOE Patents [OSTI]

    Villarreal, R.A.

    1985-11-06

    An optical scanner employed in a radioactive environment for reading indicia imprinted about a cylindrical surface of an article by means of an optical system including metallic reflective and mirror surfaces resistant to degradation and discoloration otherwise imparted to glass surfaces exposed to radiation is described.

  19. Optical transcutaneous bilirubin detector (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    JAUNDICE; DIAGNOSIS; NEONATES; SKIN; INVENTIONS; EPIDERMIS; QUANTITATIVE CHEMICAL ANALYSIS; OPTICAL SYSTEMS; FIBER OPTICS 440600; 550600; OPTICAL INSTRUMENTATION; MEDICINE

  20. Fiber optic hydrophone

    DOE Patents [OSTI]

    Kuzmenko, P.J.; Davis, D.T.

    1994-05-10

    A miniature fiber optic hydrophone based on the principles of a Fabry-Perot interferometer is disclosed. The hydrophone, in one embodiment, includes a body having a shaped flexible bladder at one end which defines a volume containing air or suitable gas, and including a membrane disposed adjacent a vent. An optical fiber extends into the body with one end terminating in spaced relation to the membrane. Acoustic waves in the water that impinge on the bladder cause the pressure of the volume therein to vary causing the membrane to deflect and modulate the reflectivity of the Fabry-Perot cavity formed by the membrane surface and the cleaved end of the optical fiber disposed adjacent to the membrane. When the light is transmitted down the optical fiber, the reflected signal is amplitude modulated by the incident acoustic wave. Another embodiment utilizes a fluid filled volume within which the fiber optic extends. 2 figures.

  1. Fiber optic hydrophone

    DOE Patents [OSTI]

    Kuzmenko, Paul J.; Davis, Donald T.

    1994-01-01

    A miniature fiber optic hydrophone based on the principles of a Fabry-Perot interferometer. The hydrophone, in one embodiment, includes a body having a shaped flexible bladder at one end which defines a volume containing air or suitable gas, and including a membrane disposed adjacent a vent. An optic fiber extends into the body with one end terminating in spaced relation to the membrane. Acoustic waves in the water that impinge on the bladder cause the pressure of the volume therein to vary causing the membrane to deflect and modulate the reflectivity of the Fabry-Perot cavity formed by the membrane surface and the cleaved end of the optical fiber disposed adjacent to the membrane. When the light is transmitted down the optical fiber, the reflected signal is amplitude modulated by the incident acoustic wave. Another embodiment utilizes a fluid filled volume within which the fiber optic extends.

  2. Digital optical conversion module

    DOE Patents [OSTI]

    Kotter, Dale K.; Rankin, Richard A.

    1991-02-26

    A digital optical conversion module used to convert an analog signal to a computer compatible digital signal including a voltage-to-frequency converter, frequency offset response circuitry, and an electrical-to-optical converter. Also used in conjunction with the digital optical conversion module is an optical link and an interface at the computer for converting the optical signal back to an electrical signal. Suitable for use in hostile environments having high levels of electromagnetic interference, the conversion module retains high resolution of the analog signal while eliminating the potential for errors due to noise and interference. The module can be used to link analog output scientific equipment such as an electrometer used with a mass spectrometer to a computer.

  3. Digital optical conversion module

    DOE Patents [OSTI]

    Kotter, D.K.; Rankin, R.A.

    1988-07-19

    A digital optical conversion module used to convert an analog signal to a computer compatible digital signal including a voltage-to-frequency converter, frequency offset response circuitry, and an electrical-to-optical converter. Also used in conjunction with the digital optical conversion module is an optical link and an interface at the computer for converting the optical signal back to an electrical signal. Suitable for use in hostile environments having high levels of electromagnetic interference, the conversion module retains high resolution of the analog signal while eliminating the potential for errors due to noise and interference. The module can be used to link analog output scientific equipment such as an electrometer used with a mass spectrometer to a computer. 2 figs.

  4. Effect of ultrasound on the growth striation and electrical properties of Ga{sub 0.03}In{sub 0.97}Sb single crystals

    SciTech Connect (OSTI)

    Kozhemyakin, G. N. Zolkina, L. V.; Rom, M. A.

    2008-12-15

    The growth striation of impurity segregation and electrical properties of Ga{sub 0.03}In{sub 0.97}Sb single crystals grown by the Czochralski method in an ultrasonic field have been investigated. It is established that ultrasonic irradiation of the melt during growth significantly decreases the growth striation (in particular, it eliminates striations spaced at a distance of more than 14 {mu}m). The Ga{sub 0.03}In{sub 0.97}Sb single crystals grown in an ultrasonic field had a higher charge-carrier mobility and thermoelectric power in comparison with the single crystals grown without ultrasound.

  5. Frit Development Efforts for Sludge Batch 4 (SB4): Model-Based Assessments

    SciTech Connect (OSTI)

    Peeler, D. K.; Edwards, T. B.

    2005-03-05

    The model-based assessments of nominal Sludge Batch 4 (SB4) compositions suggest that a viable frit candidate does not appear to be a limiting factor as the Closure Business Unit (CBU) considers various tank blending options and/or washing strategies. This statement is based solely on the projected operating windows derived from model predictions and does not include assessments of SO{sub 4} solubility or melt rate issues. The viable frit candidates covered a range of Na{sub 2}O concentrations (from 8% to 13%--including Frit 418 and Frit 320) using a ''sliding Na{sub 2}O scale'' concept (i.e., 1% increase in Na{sub 2}O being balanced by a 1% reduction in SiO{sub 2}) which effectively balances the alkali content of the incoming sludge with that in the frit to maintain and/or increase the projected operating window size while potentially leading to improved melt rate and/or waste loadings. This strategy or approach allows alternative tank blending strategies and/or different washing scenarios to be considered and accounted for in an effective manner without wholesale changes to the frit composition. In terms of projected operating windows, in general, the sludge/frit systems evaluated resulted in waste loading intervals from 25 to the mid-40%'s or even the mid-50%'s. The results suggest that a single frit could be selected for use with all 20 options which indicates some degree of frit robustness with respect to sludge compositional variation. In fact, use of Frit 418 or Frit 320 (the ''cornerstone'' frits given previous processing experience in the Defense Waste Processing Facility (DWPF)) are plausible for most (if not all) options being considered. However, the frit selection process also needs to consider potential processing issues such as melt rate. Based on historical trends between melt rate and total alkali content, one may elect to use the frit with the highest alkali content that still yields an acceptable operating window. However, other constraints may

  6. Dielectric Resonator Metamasurfaces: Optical Magnetism Emission...

    Office of Scientific and Technical Information (OSTI)

    Optical Magnetism Emission and Optical Devices. Citation Details In-Document Search Title: Dielectric Resonator Metamasurfaces: Optical Magnetism Emission and Optical Devices. ...

  7. New and Improved Data Logging and Collection System for Atmospheric...

    Office of Scientific and Technical Information (OSTI)

    for Atmospheric Radiation Measurement Climate Research Facility, Tropical Western ... for Atmospheric Radiation Measurement Climate Research Facility, Tropical Western ...

  8. ARM: Atmospheric Sounder Spectrometer for Infrared Spectral Technology...

    Office of Scientific and Technical Information (OSTI)

    engineering data Title: ARM: Atmospheric Sounder Spectrometer for Infrared Spectral Technology (ASSIST): engineering data Atmospheric Sounder Spectrometer for Infrared Spectral ...

  9. Anomalous temperature-dependent Young's modulus of a cast LAST (Pb-Sb-Ag-Te) thermoelectric material

    SciTech Connect (OSTI)

    Ren, Fei; Case, Eldon D; Timm, Edward J; Lara-Curzio, Edgar; Trejo, Rosa M

    2010-01-01

    Thermomechanical characterization is important to material evaluation and device design in the development of thermoelectric technology. In this study, we utilize the resonant ultrasound spectroscopy (RUS) technique to examine the elastic behavior of a cast LAST (Pb Sb Ag Te) material with a composition of Ag0.86Pb19Sb1.0Te20 between room temperature and 823 K. The temperature-dependent Young s modulus exhibits a monotonically decreasing trend with increasing temperature. However, an abnormal slope change in the Young s modulus temperature curve around 500 K is observed. In addition, hysteresis between heating and cooling data in the temperature range of 450 550 K is observed, which appears to be dependent on the heating/cooling rate during the RUS experiments such that the hysteresis disappears when the heating/cooling rate was decreased from 5 to 2 K min 1. In this study we propose an order disorder transition model for the anomalous temperature-dependent Young s modulus behavior observed in this study.

  10. Magneto-transport and thermoelectric properties of epitaxial FeSb{sub 2} thin film on MgO substrate

    SciTech Connect (OSTI)

    Duong, Anh Tuan; Rhim, S. H. Shin, Yooleemi; Nguyen, Van Quang; Cho, Sunglae

    2015-01-19

    We report magneto-transport and thermoelectric properties of FeSb{sub 2} thin film epitaxially grown on the MgO substrate using molecular beam epitaxy. The film exhibits compressive strain of 1.74% owing to large lattice mismatch, whose physical consequences are nontrivial. Magnetic phase has been changed from diamagnetic in bulk, as evidenced by anomalous Hall effect (AHE) and negative magneto-resistance (MR). The FeSb{sub 2} film is semiconducting without any metallic transition unlike the bulk counterpart. In particular, hysteresis in MR with distinct feature of AHE is evident with coercive field of 500 and 110 Oe for T = 20 and 50 K, respectively. Furthermore, from the Seebeck coefficients and temperature dependence of the resistivity, it is evident that the film is semiconducting with small band gap: 3.76 meV for T < 40 K and 13.48 meV for T > 40 K, respectively, where maximum thermoelectric power factor of 12 μV/cm·K at T = 50 K.

  11. Ground-state wave function of plutonium in PuSb as determined via x-ray magnetic circular dichroism

    SciTech Connect (OSTI)

    Janoschek, M.; Haskel, D.; Fernandez-Rodriguez, J.; van Veenendaal, M.; Rebizant, J.; Lander, G. H.; Zhu, J. -X.; Thompson, J. D.; Bauer, E. D.

    2015-01-01

    Measurements of x-ray magnetic circular dichroism (XMCD) and x-ray absorption near-edge structure (XANES) spectroscopy at the Pu M?,? edges of the ferromagnet PuSb are reported. Using bulk magnetization measurements and a sum rule analysis of the XMCD spectra, we determine the individual orbital [?L = 2.8(1)?B/Pu] and spin moments [?S = ?2.0(1)?B/Pu] of the Pu 5f electrons for the first time. Atomic multiplet calculations of the XMCD and XANES spectra reproduce well the experimental data and are consistent with the experimental value of the spin moment. These measurements of ?Lz? and ?Sz? are in excellent agreement with the values that have been extracted from neutron magnetic form factor measurements, and confirm the local character of the 5f electrons in PuSb. Finally, we demonstrate that a split M? as well as a narrow M? XMCD signal may serve as a signature of 5f electron localization in actinide compounds.

  12. Ground-state wave function of plutonium in PuSb as determined via x-ray magnetic circular dichroism

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Janoschek, M.; Haskel, D.; Fernandez-Rodriguez, J.; van Veenendaal, M.; Rebizant, J.; Lander, G. H.; Zhu, J. -X.; Thompson, J. D.; Bauer, E. D.

    2015-01-14

    Measurements of x-ray magnetic circular dichroism (XMCD) and x-ray absorption near-edge structure (XANES) spectroscopy at the Pu M₄,₅ edges of the ferromagnet PuSb are reported. Using bulk magnetization measurements and a sum rule analysis of the XMCD spectra, we determine the individual orbital [μL = 2.8(1)μB/Pu] and spin moments [μS = –2.0(1)μB/Pu] of the Pu 5f electrons for the first time. Atomic multiplet calculations of the XMCD and XANES spectra reproduce well the experimental data and are consistent with the experimental value of the spin moment. These measurements of Lz and Sz are in excellent agreement with the values thatmore » have been extracted from neutron magnetic form factor measurements, and confirm the local character of the 5f electrons in PuSb. We demonstrate that a split M₅ as well as a narrow M₄ XMCD signal may serve as a signature of 5f electron localization in actinide compounds.« less

  13. CaMn2Sb2: Spin waves on a frustrated antiferromagnetic honeycomb lattice

    SciTech Connect (OSTI)

    McNally, D. E.; Simonson, J. W.; Kistner-Morris, J. J.; Smith, G. J.; Hassinger, J. E.; DeBeer-Schmidt, L.; Kolesnikov, A. I.; Zaliznyak, I.; Aronson, M. C.

    2015-05-22

    We present inelastic neutron scattering measurements of the antiferromagnetic insulator CaMn2Sb2:, which consists of corrugated honeycomb layers of Mn. The dispersion of magnetic excitations has been measured along the H and L directions in reciprocal space, with a maximum excitation energy of ≈ 24 meV. These excitations are well described by spin waves in a Heisenberg model, including first and second neighbor exchange interactions, J1 and J2, in the Mn plane and also an exchange interaction between planes. The determined ratio J2/J1 ≈ 1/6 suggests that CaMn2Sb2: is the first example of a compound that lies very close to the mean field tricritical point, known for the classical Heisenberg model on the honeycomb lattice, where the N´eel phase and two different spiral phases coexist. The magnitude of the determined exchange interactions reveal a mean field ordering temperature ≈ 4 times larger than the reported N´eel temperature TN = 85 K, suggesting significant frustration arising from proximity to the tricritical point.

  14. Hyperspectral Aerosol Optical Depths from TCAP Flights

    SciTech Connect (OSTI)

    Shinozuka, Yohei; Johnson, Roy R.; Flynn, Connor J.; Russell, P. B.; Schmid, Beat; Redemann, Jens; Dunagan, Stephen; Kluzek, Celine D.; Hubbe, John M.; Segal-Rosenheimer, Michal; Livingston, J. M.; Eck, T.; Wagener, Richard; Gregory, L.; Chand, Duli; Berg, Larry K.; Rogers, Ray; Ferrare, R. A.; Hair, John; Hostetler, Chris A.; Burton, S. P.

    2013-11-13

    4STAR (Spectrometer for Sky-Scanning, Sun-Tracking Atmospheric Research), the worlds first hyperspectral airborne tracking sunphotometer, acquired aerosol optical depths (AOD) at 1 Hz during all July 2012 flights of the Two Column Aerosol Project (TCAP). Root-mean square differences from AERONET ground-based observations were 0.01 at wavelengths between 500-1020 nm, 0.02 at 380 and 1640 nm and 0.03 at 440 nm in four clear-sky fly-over events, and similar in ground side-by-side comparisons. Changes in the above-aircraft AOD across 3-km-deep spirals were typically consistent with integrals of coincident in situ (on DOE Gulfstream 1 with 4STAR) and lidar (on NASA B200) extinction measurements within 0.01, 0.03, 0.01, 0.02, 0.02, 0.02 at 355, 450, 532, 550, 700, 1064 nm, respectively, despite atmospheric variations and combined measurement uncertainties. Finer vertical differentials of the 4STAR measurements matched the in situ ambient extinction profile within 14% for one homogeneous column. For the AOD observed between 350-1660 nm, excluding strong water vapor and oxygen absorption bands, estimated uncertainties were ~0.01 and dominated by (then) unpredictable throughput changes, up to +/-0.8%, of the fiber optic rotary joint. The favorable intercomparisons herald 4STARs spatially-resolved high-frequency hyperspectral products as a reliable tool for climate studies and satellite validation.

  15. Atmospheric Radiation Measurement Climate Research Facility Operations

    Office of Scientific and Technical Information (OSTI)

    Quarterly Report October 1-December 31, 2012 (Program Document) | SciTech Connect Program Document: Atmospheric Radiation Measurement Climate Research Facility Operations Quarterly Report October 1-December 31, 2012 Citation Details In-Document Search Title: Atmospheric Radiation Measurement Climate Research Facility Operations Quarterly Report October 1-December 31, 2012 Individual datastreams from instrumentation at the Atmospheric Radiation Measurement (ARM) Climate Research Facility

  16. Atmospheric Neutrino Oscillations Professor Takaaki Kajita

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atmosphere to Electrons Atmosphere to Electrons Addthis Description Atmosphere to Electrons (A2e) is a multi-year U.S. Department of Energy (DOE) research initiative targeting significant reductions in the cost of wind energy through an improved understanding of the complex physics governing electricity generation by wind plants. The goal of A2e is to ensure future wind plants are sited, built, and operated in a way that produces the most cost-effective, usable electric power. Text Version

  17. Projection optics box

    DOE Patents [OSTI]

    Hale, Layton C.; Malsbury, Terry; Hudyma, Russell M.; Parker, John M.

    2000-01-01

    A projection optics box or assembly for use in an optical assembly, such as in an extreme ultraviolet lithography (EUVL) system using 10-14 nm soft x-ray photons. The projection optics box utilizes a plurality of highly reflective optics or mirrors, each mounted on a precision actuator, and which reflects an optical image, such as from a mask, in the EUVL system onto a point of use, such as a target or silicon wafer, the mask, for example, receiving an optical signal from a source assembly, such as a developed from laser system, via a series of highly reflective mirrors of the EUVL system. The plurality of highly reflective optics or mirrors are mounted in a housing assembly comprised of a series of bulkheads having wall members secured together to form a unit construction of maximum rigidity. Due to the precision actuators, the mirrors must be positioned precisely and remotely in tip, tilt, and piston (three degrees of freedom), while also providing exact constraint.

  18. Atmospheric Radiation Measurement Program Science Plan. Current...

    Office of Scientific and Technical Information (OSTI)

    Radiation Measurement Program Science Plan. Current Status and Future Directions of the ARM Science Program Citation Details In-Document Search Title: Atmospheric Radiation ...

  19. Atmospheric Radiation Measurement Climate Research Facility Operations...

    Office of Scientific and Technical Information (OSTI)

    Title: Atmospheric Radiation Measurement Climate Research Facility Operations Quarterly ... are collected and sent to the Data Management Facility (DMF) at Pacific Northwest ...

  20. Atmospheric Radiation Measurement Program Climate Research Facility...

    Office of Scientific and Technical Information (OSTI)

    Title: Atmospheric Radiation Measurement Program Climate Research Facility Operations ... are collected and sent to the Data Management Facility (DMF) at Pacific Northwest ...

  1. Correcting radar range measurements for atmospheric propagation...

    Office of Scientific and Technical Information (OSTI)

    Title: Correcting radar range measurements for atmospheric propagation effects. Abstract not provided. Authors: Doerry, Armin Walter Publication Date: 2013-12-01 OSTI Identifier: ...

  2. Atmospheric Radiation Measurement Program Science Plan. Current...

    Office of Scientific and Technical Information (OSTI)

    Program Science Plan. Current Status and Future Directions of the ARM Science Program Citation Details In-Document Search Title: Atmospheric Radiation Measurement Program Science ...

  3. Atmospheric Ionization Mass Spectrometry Capabilities at Sandia...

    Office of Scientific and Technical Information (OSTI)

    Mass Spectrometry Capabilities at Sandia National Labs. Citation Details In-Document Search Title: Atmospheric Ionization Mass Spectrometry Capabilities at Sandia National Labs. ...

  4. ARM - Publications: Science Team Meeting Documents: Atmospheric...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atmospheric Modes of Drizzling Stratus at the ARM SGP Site Kollias, Pavlos RSMASUniversity of Miami Albrecht, Bruce University of Miami The representation of boundary layer clouds ...

  5. Assessment of radionuclides (uranium and thorium) atmospheric...

    Office of Scientific and Technical Information (OSTI)

    Title: Assessment of radionuclides (uranium and thorium) atmospheric pollution around Manjung district, Perak using moss as bio-indicator Bio-monitoring method using mosses have ...

  6. Search for: "atmospheric radiation measurement" | Data Explorer

    Office of Scientific and Technical Information (OSTI)

    ... Atmospheric Radiation Measurement (ARM) Data from Shouxian, China for the Study of Aerosol Indirect Effects in China In a complex ARM Mobile Facility (AMF) deployment, monitoring ...

  7. Evaluation of Routine Atmospheric Sounding Measurements using...

    Office of Scientific and Technical Information (OSTI)

    using Unmanned Systems (ERASMUS) Science Plan Citation Details In-Document Search Title: Evaluation of Routine Atmospheric Sounding Measurements using Unmanned Systems ...

  8. Retrieving 4-dimensional atmospheric boundary layer structure...

    Office of Scientific and Technical Information (OSTI)

    (BER) (SC-23) Country of Publication: United States Language: English Subject: 54 ENVIRONMENTAL SCIENCES Atmospheric System Research Word Cloud More Like This Full Text preview ...

  9. Atmosphere to Electrons | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atmosphere to Electrons Atmosphere to Electrons Atmosphere to Electrons Atmosphere to Electrons (A2e) is a multi-year U.S. Department of Energy (DOE) research initiative targeting significant reductions in the cost of wind energy through an improved understanding of the complex physics governing electricity generation by wind plants. The goal of A2e is to ensure future wind plants are sited, built, and operated in a way that produces the most cost-effective, usable electric power. To achieve

  10. Composition and Reactions of Atmospheric Aerosol Particles

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    high-resolution scanning transmission x-ray images obtained at the ALS have revealed chemical reactions on and in atmospheric aerosol particles that caused particle growth while...

  11. Search for: "atmospheric radiation measurement" | DOE PAGES

    Office of Scientific and Technical Information (OSTI)

    measurement" 50 results for: "atmospheric radiation measurement" Full Text and Citations Filters Filter Search Results Everything (Citations and Full Text) (50 results) ...

  12. Sea ice - atmosphere interaction: Application of multispectral...

    Office of Scientific and Technical Information (OSTI)

    Application of multispectral satellite data in polar surface energy flux estimates. ... Title: Sea ice - atmosphere interaction: Application of multispectral satellite data in ...

  13. Synthesis, characterisation, electrical and optical properties of copper borate compounds

    SciTech Connect (OSTI)

    Kipcak, Azmi Seyhun; Senberber, Fatma Tugce; Aydin Yuksel, Sureyya; Derun, Emek Moroydor; Piskin, Sabriye

    2015-10-15

    Highlights: • Cu(BO{sub 2}){sub 2} was synthesized at the form of with pdf number of “00-001-0472”. • Particle sizes were found between 162.72 and 56.44 nm and 195.76 and 75.73 nm at CuSNaH. • Reaction yields were 90.4 ± 0.84, 96.9 ± 0.78 and 78.9 ± 0.76% for CuST, CuSB and CuSNaH. • The resistivity of CuST, CuSB and CuSNaH are 1.10 × 10{sup 7}, 7.02 × 10{sup 6} and 8.62 × 10{sup 5} Ωm. • The optical energy gap was 3.76 eV. - Abstract: The hydrothermal synthesis of copper borate compounds [Cu(BO{sub 2}){sub 2}] was studied, and several parameters were found to affect the synthesis. Raw materials, including CuSO{sub 4}·5H{sub 2}O, Na{sub 2}B{sub 4}O{sub 7}·5H{sub 2}O, Na{sub 2}B{sub 4}O{sub 7}·10H{sub 2}O, NaOH and H{sub 3}BO{sub 3}, were used. Reaction temperatures and reaction times between 40 °C and 100 °C and 15 and 240 min, respectively, were used. The as-synthesised copper borate was analysed using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and scanning electron microscopy (SEM). The yields of the reactions were also calculated. Single-phase, nanoparticulate copper borate compounds (Cu(BO{sub 2}){sub 2}) possessing high XRD crystal scores were obtained; the reactions used to obtain these materials were highly efficient. Electrical resistivity and optical absorbance measurements were carried out on the compounds obtained from the highest yielding reactions. The results of this study showed that even using a reaction time of 15 min, copper borate formation was successfully achieved.

  14. ARM - Measurement - Aerosol optical properties

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    : Aerosol optical properties The optical properties of aerosols, including asymmetry factor, phase-function, single-scattering albedo, refractive index, and backscatter...

  15. Concentrator Optics | Open Energy Information

    Open Energy Info (EERE)

    Concentrator Optics Jump to: navigation, search Name: Concentrator Optics Place: Marburg, Germany Zip: 35037 Product: A Germany-based company engaged in the design and production...

  16. Fiber optic laser rod

    DOE Patents [OSTI]

    Erickson, G.F.

    1988-04-13

    A laser rod is formed from a plurality of optical fibers, each forming an individual laser. Synchronization of the individual fiber lasers is obtained by evanescent wave coupling between adjacent optical fiber cores. The fiber cores are dye-doped and spaced at a distance appropriate for evanescent wave coupling at the wavelength of the selected dye. An interstitial material having an index of refraction lower than that of the fiber core provides the optical isolation for effective lasing action while maintaining the cores at the appropriate coupling distance. 2 figs.

  17. Optical limiting materials

    DOE Patents [OSTI]

    McBranch, D.W.; Mattes, B.R.; Koskelo, A.C.; Heeger, A.J.; Robinson, J.M.; Smilowitz, L.B.; Klimov, V.I.; Cha, M.; Sariciftci, N.S.; Hummelen, J.C.

    1998-04-21

    Methanofullerenes, fulleroids and/or other fullerenes chemically altered for enhanced solubility, in liquid solution, and in solid blends with transparent glass (SiO{sub 2}) gels or polymers, or semiconducting (conjugated) polymers, are shown to be useful as optical limiters (optical surge protectors). The nonlinear absorption is tunable such that the energy transmitted through such blends saturates at high input energy per pulse over a wide range of wavelengths from 400--1,100 nm by selecting the host material for its absorption wavelength and ability to transfer the absorbed energy into the optical limiting composition dissolved therein. This phenomenon should be generalizable to other compositions than substituted fullerenes. 5 figs.

  18. Solitons in nonlinear optics

    SciTech Connect (OSTI)

    Maimistov, Andrei I

    2010-11-13

    The classic examples of optical phenomena resulting in the appearance of solitons are self-focusing, self-induced transparency, and parametric three-wave interaction. To date, the list of the fields of nonlinear optics and models where solitons play an important role has significantly expanded. Now long-lived or stable solitary waves are called solitons, including, for example, dissipative, gap, parametric, and topological solitons. This review considers nonlinear optics models giving rise to the appearance of solitons in a narrow sense: solitary waves corresponding to the solutions of completely integrable systems of equations basic for the models being discussed. (review)

  19. Scalable optical quantum computer

    SciTech Connect (OSTI)

    Manykin, E A; Mel'nichenko, E V [Institute for Superconductivity and Solid-State Physics, Russian Research Centre 'Kurchatov Institute', Moscow (Russian Federation)

    2014-12-31

    A way of designing a scalable optical quantum computer based on the photon echo effect is proposed. Individual rare earth ions Pr{sup 3+}, regularly located in the lattice of the orthosilicate (Y{sub 2}SiO{sub 5}) crystal, are suggested to be used as optical qubits. Operations with qubits are performed using coherent and incoherent laser pulses. The operation protocol includes both the method of measurement-based quantum computations and the technique of optical computations. Modern hybrid photon echo protocols, which provide a sufficient quantum efficiency when reading recorded states, are considered as most promising for quantum computations and communications. (quantum computer)

  20. Silicon fiber optic sensors

    DOE Patents [OSTI]

    Pocha, Michael D.; Swierkowski, Steve P.; Wood, Billy E.

    2007-10-02

    A Fabry-Perot cavity is formed by a partially or wholly reflective surface on the free end of an integrated elongate channel or an integrated bounding wall of a chip of a wafer and a partially reflective surface on the end of the optical fiber. Such a constructed device can be utilized to detect one or more physical parameters, such as, for example, strain, through the optical fiber using an optical detection system to provide measuring accuracies of less than aboutb0.1%.

  1. Tuned optical cavity magnetometer

    DOE Patents [OSTI]

    Okandan, Murat; Schwindt, Peter

    2010-11-02

    An atomic magnetometer is disclosed which utilizes an optical cavity formed from a grating and a mirror, with a vapor cell containing an alkali metal vapor located inside the optical cavity. Lasers are used to magnetically polarize the alkali metal vapor and to probe the vapor and generate a diffracted laser beam which can be used to sense a magnetic field. Electrostatic actuators can be used in the magnetometer for positioning of the mirror, or for modulation thereof. Another optical cavity can also be formed from the mirror and a second grating for sensing, adjusting, or stabilizing the position of the mirror.

  2. Some results of an experimental study of the atmospheric aerosol in Tomsk: A combined approach

    SciTech Connect (OSTI)

    Zuev, V.V.

    1996-04-01

    As widely accepted, aerosols strongly contribute to the formation of the earth`s radiation balance through the absorption and scattering of solar radiation. In addition, aerosols, being active condensation nuclei, also have a role in the cloud formation process. In this paper, results are presented of aerosol studies undertaken at the field measurement sites of the Institute of Atmospheric Optics in Tomsk and the Tomsk region.

  3. Gregorian optical system with non-linear optical technology for protection against intense optical transients

    DOE Patents [OSTI]

    Ackermann, Mark R.; Diels, Jean-Claude M.

    2007-06-26

    An optical system comprising a concave primary mirror reflects light through an intermediate focus to a secondary mirror. The secondary mirror re-focuses the image to a final image plane. Optical limiter material is placed near the intermediate focus to optically limit the intensity of light so that downstream components of the optical system are protected from intense optical transients. Additional lenses before and/or after the intermediate focus correct optical aberrations.

  4. SEISMOLOGY OF A MASSIVE PULSATING HYDROGEN ATMOSPHERE WHITE DWARF

    SciTech Connect (OSTI)

    Kepler, S. O.; Pelisoli, Ingrid; Pecanha, Viviane; Costa, J. E. S.; Fraga, Luciano; Hermes, J. J.; Winget, D. E.; Castanheira, Barbara; Corsico, A. H.; Romero, A. D.; Althaus, Leandro; Kleinman, S. J.; Nitta, A.; Koester, D.; Kuelebi, Baybars; Kanaan, Antonio

    2012-10-01

    We report our observations of the new pulsating hydrogen atmosphere white dwarf SDSS J132350.28+010304.22. We discovered periodic photometric variations in frequency and amplitude that are commensurate with nonradial g-mode pulsations in ZZ Ceti stars. This, along with estimates for the star's temperature and gravity, establishes it as a massive ZZ Ceti star. We used time-series photometric observations with the 4.1 m SOAR Telescope, complemented by contemporary McDonald Observatory 2.1 m data, to discover the photometric variability. The light curve of SDSS J132350.28+010304.22 shows at least nine detectable frequencies. We used these frequencies to make an asteroseismic determination of the total mass and effective temperature of the star: M{sub *} = 0.88 {+-} 0.02 M{sub Sun} and T{sub eff} = 12, 100 {+-} 140 K. These values are consistent with those derived from the optical spectra and photometric colors.

  5. Multi-tipped optical component

    DOE Patents [OSTI]

    D'Urso, Brian R.; Simpson, John T.

    2010-04-13

    An optical component has a plurality of parallel noncontiguous optical conduits of at least one protrusive phase material embedded in a recessive phase material that acts as a support structure. The optical conduits extend from a proximal surface to a distal surface of the optical component. The distal surface has a plurality of spaced apart surface features of the protrusive phase material. Each independent optical conduits act as waveguides for a wavelength or range of wavelengths. The optical component can be formed such that the protruding surface features at the distal end of the component form an ordered array. An optical instrument can include the optical component in conjunction with a light source for illuminating a sample and a detector in optical communication optical component via the optical conduits.

  6. Stereoscopic optical viewing system

    DOE Patents [OSTI]

    Tallman, C.S.

    1986-05-02

    An improved optical system which provides the operator with a stereoscopic viewing field and depth of vision, particularly suitable for use in various machines such as electron or laser beam welding and drilling machines. The system features two separate but independently controlled optical viewing assemblies from the eyepiece to a spot directly above the working surface. Each optical assembly comprises a combination of eye pieces, turning prisms, telephoto lenses for providing magnification, achromatic imaging relay lenses and final stage pentagonal turning prisms. Adjustment for variations in distance from the turning prisms to the workpiece, necessitated by varying part sizes and configurations and by the operator's visual accuity, is provided separately for each optical assembly by means of separate manual controls at the operator console or within easy reach of the operator.

  7. Optical gamma thermometer

    SciTech Connect (OSTI)

    Koster, Glen Peter; Xia, Hua; Lee, Boon Kwee

    2013-08-06

    An optical gamma thermometer includes a metal mass having a temperature proportional to a gamma flux within a core of a nuclear reactor, and an optical fiber cable for measuring the temperature of the heated metal mass. The temperature of the heated mass may be measured by using one or more fiber grating structures and/or by using scattering techniques, such as Raman, Brillouin, and the like. The optical gamma thermometer may be used in conjunction with a conventional reactor heat balance to calibrate the local power range monitors over their useful in-service life. The optical gamma thermometer occupies much less space within the in-core instrument tube and costs much less than the conventional gamma thermometer.

  8. Optical displacement sensor

    DOE Patents [OSTI]

    Carr, Dustin W.

    2008-04-08

    An optical displacement sensor is disclosed which uses a vertical-cavity surface-emitting laser (VCSEL) coupled to an optical cavity formed by a moveable membrane and an output mirror of the VCSEL. This arrangement renders the lasing characteristics of the VCSEL sensitive to any movement of the membrane produced by sound, vibrations, pressure changes, acceleration, etc. Some embodiments of the optical displacement sensor can further include a light-reflective diffractive lens located on the membrane or adjacent to the VCSEL to control the amount of lasing light coupled back into the VCSEL. A photodetector detects a portion of the lasing light from the VCSEL to provide an electrical output signal for the optical displacement sensor which varies with the movement of the membrane.

  9. Optical fiber switch

    DOE Patents [OSTI]

    Early, James W.; Lester, Charles S.

    2002-01-01

    Optical fiber switches operated by electrical activation of at least one laser light modulator through which laser light is directed into at least one polarizer are used for the sequential transport of laser light from a single laser into a plurality of optical fibers. In one embodiment of the invention, laser light from a single excitation laser is sequentially transported to a plurality of optical fibers which in turn transport the laser light to separate individual remotely located laser fuel ignitors. The invention can be operated electro-optically with no need for any mechanical or moving parts, or, alternatively, can be operated electro-mechanically. The invention can be used to switch either pulsed or continuous wave laser light.

  10. Erected mirror optical switch

    DOE Patents [OSTI]

    Allen, James J.

    2005-06-07

    A microelectromechanical (MEM) optical switching apparatus is disclosed that is based on an erectable mirror which is formed on a rotatable stage using surface micromachining. An electrostatic actuator is also formed on the substrate to rotate the stage and mirror with a high angular precision. The mirror can be erected manually after fabrication of the device and used to redirect an incident light beam at an arbitrary angel and to maintain this state in the absence of any applied electrical power. A 1.times.N optical switch can be formed using a single rotatable mirror. In some embodiments of the present invention, a plurality of rotatable mirrors can be configured so that the stages and mirrors rotate in unison when driven by a single micromotor thereby forming a 2.times.2 optical switch which can be used to switch a pair of incident light beams, or as a building block to form a higher-order optical switch.

  11. Metasurface optical antireflection coating

    SciTech Connect (OSTI)

    Zhang, Boyang; Hendrickson, Joshua; Nader, Nima; Chen, Hou -Tong; Guo, Junpeng

    2014-12-15

    Light reflection at the boundary of two different media is one of the fundamental phenomena in optics, and reduction of reflection is highly desirable in many optical systems. Traditionally, optical antireflection has been accomplished using single- or multiple-layer dielectric films and graded index surface structures in various wavelength ranges. However, these approaches either impose strict requirements on the refractive index matching and film thickness, or involve complicated fabrication processes and non-planar surfaces that are challenging for device integration. Here, we demonstrate an antireflection coating strategy, both experimentally and numerically, by using metasurfaces with designer optical properties in the mid-wave infrared. Our results show that the metasurface antireflection is capable of eliminating reflection and enhancing transmission over a broad spectral band and a wide incidence angle range. The demonstrated antireflection technique has no requirement on the choice of materials and is scalable to other wavelengths.

  12. Metasurface optical antireflection coating

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Boyang; Hendrickson, Joshua; Nader, Nima; Chen, Hou -Tong; Guo, Junpeng

    2014-12-15

    Light reflection at the boundary of two different media is one of the fundamental phenomena in optics, and reduction of reflection is highly desirable in many optical systems. Traditionally, optical antireflection has been accomplished using single- or multiple-layer dielectric films and graded index surface structures in various wavelength ranges. However, these approaches either impose strict requirements on the refractive index matching and film thickness, or involve complicated fabrication processes and non-planar surfaces that are challenging for device integration. Here, we demonstrate an antireflection coating strategy, both experimentally and numerically, by using metasurfaces with designer optical properties in the mid-wave infrared.more » Our results show that the metasurface antireflection is capable of eliminating reflection and enhancing transmission over a broad spectral band and a wide incidence angle range. The demonstrated antireflection technique has no requirement on the choice of materials and is scalable to other wavelengths.« less

  13. Stereoscopic optical viewing system

    DOE Patents [OSTI]

    Tallman, Clifford S.

    1987-01-01

    An improved optical system which provides the operator a stereoscopic viewing field and depth of vision, particularly suitable for use in various machines such as electron or laser beam welding and drilling machines. The system features two separate but independently controlled optical viewing assemblies from the eyepiece to a spot directly above the working surface. Each optical assembly comprises a combination of eye pieces, turning prisms, telephoto lenses for providing magnification, achromatic imaging relay lenses and final stage pentagonal turning prisms. Adjustment for variations in distance from the turning prisms to the workpiece, necessitated by varying part sizes and configurations and by the operator's visual accuity, is provided separately for each optical assembly by means of separate manual controls at the operator console or within easy reach of the operator.

  14. Methods for globally treating silica optics to reduce optical damage

    DOE Patents [OSTI]

    Miller, Philip Edward; Suratwala, Tayyab Ishaq; Bude, Jeffrey Devin; Shen, Nan; Steele, William Augustus; Laurence, Ted Alfred; Feit, Michael Dennis; Wong, Lana Louie

    2012-11-20

    A method for preventing damage caused by high intensity light sources to optical components includes annealing the optical component for a predetermined period. Another method includes etching the optical component in an etchant including fluoride and bi-fluoride ions. The method also includes ultrasonically agitating the etching solution during the process followed by rinsing of the optical component in a rinse bath.

  15. GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics

    SciTech Connect (OSTI)

    Utrilla, A. D.; Ulloa, J. M. Guzman, A.; Hierro, A.

    2014-07-28

    The application of a GaAsSb/GaAsN short-period superlattice capping layer (CL) on InAs/GaAs quantum dots (QDs) is shown to be an option for providing improved luminescence properties to this system. Separating both GaAsSb and GaAsN ternaries during the growth in 2 monolayer-thick phases solves the GaAsSbN immiscibility-related problems. Strong fluctuations in the CL composition and strain field as well as in the QD size distribution are significantly reduced, and a more regular CL interface is also obtained. Room-temperature (RT) photoluminescence (PL) is obtained for overall N contents as high as 3%, yielding PL peak wavelengths beyond 1.4 μm in samples with a type-II band alignment. High external quantum efficiency electroluminescence and photocurrent from the QD ground state are also demonstrated at RT in a single QD-layer p-i-n device. Thus, it becomes possible to combine and transfer the complementary benefits of Sb- and N-containing GaAs alloys to InAs QD-based optoelectronics.

  16. Confirmatory Survey Report for Area B1S/B2S at the Chevron Mining Washington Remediation Project, Washington, PA

    SciTech Connect (OSTI)

    W. C. Adams

    2007-11-20

    During the period of October 2 and 3, 2007, the Oak Ridge Institute for Science and Education (ORISE) performed confirmatory radiological survey activities which included gamma surface scans within Area B1S/B2S and the collection of soil samples from these areas.

  17. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    SciTech Connect (OSTI)

    Kasanaboina, Pavan Kumar; Ahmad, Estiak; Li, Jia; Iyer, Shanthi; Reynolds, C. Lewis; Liu, Yang

    2015-09-07

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

  18. Analytical electron microscopy investigation of elemental composition and bonding structure at the Sb-doped Ni-fully-silicide/SiO{sub 2} interface

    SciTech Connect (OSTI)

    Kawasaki, Naohiko; Sugiyama, Naoyuki; Otsuka, Yuji; Hashimoto, Hideki; Kurata, Hiroki; Isoda, Seiji

    2011-03-15

    It is very important to control the elemental composition and bonding structure at the gate electrode/gate dielectrics interface in metal-oxide-semiconductor transistor devices because this determines the threshold voltage of the gate electrode. In this study, we investigated the structure at the interface between the antimony (Sb)-doped nickel-fully-silicide gate electrode and SiO{sub 2} dielectrics by employing high-spatial resolution techniques such as energy dispersive x-ray spectroscopy and electron energy-loss spectroscopy using a scanning transmission electron microscope. In one region, we found a thin nickel layer at the NiSi/SiO{sub 2} interface originating from the migration of native oxide at the face of the poly-silicon. In another region, a Sb pileup was detected at the NiSi/SiO{sub 2} interface where the Ni L{sub 3}-edge spectrum showed Ni-Sb bonding, then it was suggested that Sb atoms exist at the bottom of NiSi, substituting for Si atoms in NiSi.

  19. Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

    SciTech Connect (OSTI)

    Zhu, Y.; Jain, N.; Hudait, M. K.; Mohata, D. K.; Datta, S.; Lubyshev, D.; Fastenau, J. M.; Liu, A. K.

    2013-01-14

    The experimental study of the valence band offset ({Delta}E{sub v}) of a mixed As/Sb type-II staggered gap GaAs{sub 0.35}Sb{sub 0.65}/In{sub 0.7}Ga{sub 0.3}As heterostructure used as source/channel junction of n-channel tunnel field effect transistor (TFET) grown by molecular beam epitaxy was investigated by x-ray photoelectron spectroscopy (XPS). Cross-sectional transmission electron micrograph shows high crystalline quality at the source/channel heterointerface. XPS results demonstrate a {Delta}E{sub v} of 0.39 {+-} 0.05 eV at the GaAs{sub 0.35}Sb{sub 0.65}/In{sub 0.7}Ga{sub 0.3}As heterointerface. The conduction band offset was calculated to be {approx}0.49 eV using the band gap values of source and channel materials and the measured valence band offset. An effective tunneling barrier height of 0.21 eV was extracted, suggesting a great promise for designing a metamorphic mixed As/Sb type-II staggered gap TFET device structure for low-power logic applications.

  20. Relaying an optical wavefront

    DOE Patents [OSTI]

    Sweatt, William C.; Vawter, G. Allen

    2007-03-06

    A wavefront rely devices samples an incoming optical wavefront at different locations, optically relays the samples while maintaining the relative position of the samples and the relative phase between the samples. The wavefront is reconstructed due to interference of the samples. Devices can be designed for many different wavelengths, including for example the ultraviolet, visible, infrared and even longer wavelengths such as millimeter waves. In one application, the device function as a telescope but with negligible length.

  1. Fiber optics welder

    DOE Patents [OSTI]

    Higgins, R.W.; Robichaud, R.E.

    A system is described for welding fiber optic waveguides together. The ends of the two fibers to be joined together are accurately, collinearly aligned in a vertical orientation and subjected to a controlled, diffuse arc to effect welding and thermal conditioning. A front-surfaced mirror mounted at a 45/sup 0/ angle to the optical axis of a stereomicroscope mounted for viewing the junction of the ends provides two orthogonal views of the interface during the alignment operation.

  2. Binary Optics Toolkit

    Energy Science and Technology Software Center (OSTI)

    1996-04-02

    This software is a set of tools for the design and analysis of binary optics. It consists of a series of stand-alone programs written in C and some scripts written in an application-specific language interpreted by a CAD program called DW2000. This software can be used to optimize the design and placement of a complex lens array from input to output and produce contours, mask designs, and data exported for diffractive optic analysis.

  3. NREL: Process Development and Integration Laboratory - Atmospheric

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Processing Platform Capabilities Research Process Development and Integration Laboratory Printable Version Atmospheric Processing Platform Capabilities The Atmospheric Processing platform in the Process Development and Integration Laboratory offers powerful capabilities with integrated tools for depositing, processing, and characterizing photovoltaic materials and devices. In particular, this platform focuses on different methods to deposit ("write") materials onto a variety of

  4. High-Temperature Thermoelectric Properties of the Solid–Solution Zintl Phase Eu11Cd6Sb12–xAsx (x < 3)

    SciTech Connect (OSTI)

    Kazem, Nasrin; Xie, Weiwei; Ohno, Saneyuki; Zevalkink, Alexandra; Miller, Gordon J; Snyder, G Jeffrey; Kauzlarich, Susan M

    2014-02-11

    Zintl phases are compounds that have shown promise for thermoelectric applications. The title solid–solution Zintl compounds were prepared from the elements as single crystals using a tin flux for compositions x = 0, 1, 2, and 3. Eu11Cd6Sb12–xAsx (x < 3) crystallize isostructurally in the centrosymmetric monoclinic space group C2/m (no. 12, Z = 2) as the Sr11Cd6Sb12 structure type (Pearson symbol mC58). Efforts to make the As compositions for x exceeding ~3 resulted in structures other than the Sr11Cd6Sb12 structure type. Single-crystal X-ray diffraction indicates that As does not randomly substitute for Sb in the structure but is site specific for each composition. The amount of As determined by structural refinement was verified by electron microprobe analysis. Electronic structures and energies calculated for various model structures of Eu11Cd6Sb10As2 (x = 2) indicated that the preferred As substitution pattern involves a mixture of three of the six pnicogen sites in the asymmetric unit. In addition, As substitution at the Pn4 site opens an energy gap at the Fermi level, whereas substitution at the other five pnicogen sites remains semimetallic with a pseudo gap. Thermoelectric properties of these compounds were measured on hot-pressed, fully densified pellets. Samples show exceptionally low lattice thermal conductivities from room temperature to 775 K: 0.78–0.49 W/mK for x = 0; 0.72–0.53 W/mK for x = 1; and 0.70–0.56 W/mK for x = 2. Eu11Cd6Sb12 shows a high p-type Seebeck coefficient (from +118 to 153 μ V/K) but also high electrical resistivity (6.8 to 12.8 mΩ·cm). The value of zT reaches 0.23 at 774 K. The properties of Eu11Cd6Sb12–xAsx are interpreted in discussion with the As site substitution.

  5. From thermoelectric bulk to nanomaterials: Current progress for Bi 2 Te 3 and CoSb 3: From thermoelectric bulk to nanomaterials

    SciTech Connect (OSTI)

    Peranio, N.; Eibl, O.; Bäßler, S.; Nielsch, K.; Klobes, B.; Hermann, R. P.; Daniel, M.; Albrecht, M.; Görlitz, H.; Pacheco, V.; Bedoya-Martínez, N.; Hashibon, A.; Elsässer, C.

    2015-10-29

    We synthesized Bi2Te3 and CoSb3 based nanomaterials and their thermoelectric, structural, and vibrational properties analyzed to assess and reduce ZT-limiting mechanisms. The same preparation and/or characterization methods were applied in the different materials systems. Single-crystalline, ternary p-type Bi15Sb29Te56, and n-type Bi38Te55Se7 nanowires with power factors comparable to nanostructured bulkmaterialswere prepared by potential-pulsed electrochemical deposition in a nanostructured Al2O3 matrix. p-type Sb2Te3, n-type Bi2Te3, and n-type CoSb3 thin films were grown at room temperature using molecular beam epitaxy and were subsequently annealed at elevated temperatures. It yielded polycrystalline, single phase thin films with optimized charge carrier densities. In CoSb3 thin films the speed of sound could be reduced by filling the cage structure with Yb and alloying with Fe yielded p-type material. Bi2(Te0.91Se0.09)3/SiC and (Bi0.26Sb0.74)2Te3/SiC nanocomposites with low thermal conductivities and ZT values larger than 1 were prepared by spark plasma sintering. Nanostructure, texture, chemical composition, as well as electronic and phononic excitations were investigated by X-ray diffraction, nuclear resonance scattering, inelastic neutron scattering, M ossbauer spectroscopy, and transmission electron microscopy. Furthermore, for Bi2Te3 materials, ab-initio calculations together with equilibrium and non-equilibrium molecular dynamics simulations for point defects yielded their formation energies and their effect on lattice thermal conductivity, respectively. Current advances in thermoelectric Bi2Te3 and CoSb3 based nanomaterials are

  6. Observation and modeling of polycrystalline grain formation in Ge{sub 2}Sb{sub 2}Te{sub 5}

    SciTech Connect (OSTI)

    Burr, Geoffrey W.; Tchoulfian, Pierre; Topuria, Teya; Nyffeler, Clemens; Virwani, Kumar; Padilla, Alvaro; Shelby, Robert M.; Eskandari, Mona; Jackson, Bryan; Lee, Bong-Sub

    2012-05-15

    The relationship between the polycrystalline nature of phase change materials (such as Ge{sub 2}Sb{sub 2}Te{sub 5}) and the intermediate resistance states of phase change memory (PCM) devices has not been widely studied. A full understanding of such states will require knowledge of how polycrystalline grains form, how they interact with each other at various temperatures, and how the differing electrical (and thermal) characteristics within the grains and at their boundaries combine through percolation to produce the externally observed electrical (and thermal) characteristics of a PCM device. We address the first of these tasks (and introduce a vehicle for the second) by studying the formation of fcc polycrystalline grains from the as-deposited amorphous state in undoped Ge{sub 2}Sb{sub 2}Te{sub 5}. We perform ex situ transmission electron microscopy membrane experiments and then match these observations against numerical simulation. Ramped-anneal experiments show that the temperature ramp-rate strongly influences the median grain size. By truncating such ramped-anneal experiments at various peak temperatures, we convincingly demonstrate that the temperature range over which these grains are established is quite narrow. Subsequent annealing at elevated temperature appears to change these established distributions of grain sizes only slightly. Our numerical simulator--which models nuclei formation through classical nucleation theory and then tracks the subsequent time- and temperature-dependent growth of these grains--can match these experimental observations of initial grain distributions and crystallization temperature both qualitatively and quantitatively. These simulations show that the particular narrow temperature range over which crystallization occurs shifts as a function of temperature ramp-rate, which allows us to quantify the lower portions of the time-temperature-transformation map for Ge{sub 2}Sb{sub 2}Te{sub 5}. Future experiments and extensions of

  7. Effect of magnetic fields on the Kondo insulator CeRhSb: Magnetoresistance and high-field heat capacity measurements

    SciTech Connect (OSTI)

    Malik, S.K.; Menon, L.; Pecharsky, V.K.; Gschneidner, K.A. Jr.

    1997-05-01

    The compound CeRhSb is a mixed valent Ce-based compound which shows a gap in the electronic density of states at low temperatures. The gap manifests by a rise in electrical resistivity{emdash}below about 8 K from which the gap energy is estimated to be about 4 K. We have carried out heat capacity measurements on this compound in various applied fields up to 9.85 T. The magnetic contribution to the heat capacity, {Delta}C, is found to have a maximum in {Delta}C/T vs T at 10 K, below which {Delta}C/T is linear with T. This is attributed to the fact that below this temperature, in the gapped state, the electronic density of states decreases linearly with decreasing temperature. On application of a magnetic field, the electronic specific heat coefficient {gamma} in the gapped state increases by {approximately}4mJ/molK{sup 2}. The maximum in {Delta}C/T vs T is observed in all fields, which shifts to lower temperatures {approximately}1K at 5.32 T and raises again at 9.85 T to about the same values as at H=0T. This suggests that the gap exists for all fields up to 9.85 T. Above 10 K, in the mixed-valent state, {Delta}C/T vs T decreases with increasing temperature in zero field. There is hardly any effect of application of field in the mixed-valent state. We have also carried out magnetoresistance measurements on CeRhSb up to fields of 5.5 T at 2, 4.5, 10, 20, and 30 K. The magnetoresistance in CeRhSb is positive at temperatures of 4.5 K and above, in applied fields up to 5.5 T. At 5.5 T, the magnetoresistance is maximum at 4.5 K (6{percent}) and decreases with increasing temperature. The observation of the maximum is consistent with the observation of a maximum in {Delta}C/T vs T and is due to a change in the density of states. At a temperature of 2 K, a negative magnetoresistance is observed for magnetic fields greater than {approximately}3.5T which suggests reduction in the gap. {copyright} {ital 1997} {ital The American Physical Society}

  8. Optical pumping in a whispering mode optical waveguide

    DOE Patents [OSTI]

    Kurnit, Norman A.

    1984-01-01

    A device and method for optical pumping in a whispering mode optical waveguide. Both a helical ribbon and cylinder are disclosed which incorporate an additional curvature for confining the beam to increase intensity. An optical pumping medium is disposed in the optical path of the beam as it propagates along the waveguide. Optical pumping is enhanced by the high intensities of the beam and long interaction pathlengths which are achieved in a small volume.

  9. Optical pumping in a whispering-mode optical waveguide

    DOE Patents [OSTI]

    Kurnit, N.A.

    1981-08-11

    A device and method for optical pumping in a whispering mode optical waveguide are described. Both a helical ribbon and cylinder are disclosed which incorporate an additional curvature for confining the beam to increase intensity. An optical pumping medium is disposed in the optical path of the beam as it propagates along the waveguide. Optical pumping is enhanced by the high intensities of the beam and long interaction path lengths which are achieved in a small volume.

  10. Atmospheric sampling glow discharge ionization source

    DOE Patents [OSTI]

    McLuckey, S.A.; Glish, G.L.

    1989-07-18

    An atmospheric sampling glow discharge ionization source that can be used in combination with an analytical instrument which operates at high vacuum, such as a mass spectrometer. The atmospheric sampling glow discharge ionization source comprises a chamber with at least one pair of electrodes disposed therein, an inlet for a gaseous sample to be analyzed and an outlet communicating with an analyzer which operates at subatmospheric pressure. The ionization chamber is maintained at a pressure below atmospheric pressure, and a voltage difference is applied across the electrodes to induce a glow discharge between the electrodes, so that molecules passing through the inlet are ionized by the glow discharge and directed into the analyzer. The ionization source accepts the sample under atmospheric pressure conditions and processes it directly into the high vacuum instrument, bridging the pressure gap and drawing off unwanted atmospheric gases. The invention also includes a method for analyzing a gaseous sample using the glow discharge ionization source described above. 3 figs.

  11. Atmospheric sampling glow discharge ionization source

    DOE Patents [OSTI]

    McLuckey, Scott A. (Oak Ridge, TN); Glish, Gary L. (Oak Ridge, TN)

    1989-01-01

    An atmospheric sampling glow discharge ionization source that can be used in combination with an analytical instrument which operates at high vacuum, such as a mass spectrometer. The atmospheric sampling glow discharge ionization source comprises a chamber with at least one pair of electrodes disposed therein, an inlet for a gaseous sample to be analyzed and an outlet communicating with an analyzer which operates at subatmospheric pressure. The ionization chamber is maintained at a pressure below atmospheric pressure, and a voltage difference is applied across the electrodes to induce a glow discharge between the electrodes, so that molecules passing through the inlet are ionized by the glow discharge and directed into the analyzer. The ionization source accepts the sample under atmospheric pressure conditions and processes it directly into the high vacuum instrument, bridging the pressure gap and drawing off unwanted atmospheric gases. The invention also includes a method for analyzing a gaseous sample using the glow discharge ionization source described above.

  12. ARM - Publications: Science Team Meeting Documents

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Retrieval of Mean Cosine of Aerosol Phase Function from Extinction and Sky Brightness Measurements Zhuravleva, T.B.(a), Sviridenkov, M.A.(b), and Anikin, P.P.(b), Institute of Atmospheric Optics SB RAS, Tomsk, Russia (a), A.M. Obukhov Institute of Atmospheric Physics RAS, Moscow, Russia (b) Thirteenth Atmospheric Radiation Measurement (ARM) Science Team Meeting Asymmetry of the aerosol phase function together with optical thickness drive the magnitude of the aerosol radiative forcing. Two

  13. Design of a differential radiometer for atmospheric radiative flux measurements

    SciTech Connect (OSTI)

    LaDelfe, P.C.; Weber, P.G.; Rodriguez, C.W.

    1994-11-01

    The Hemispherical Optimized NEt Radiometer (HONER) is an instrument under development at the Los Alamos National Laboratory for deployment on an unmanned aerospace vehicle as part of the Atmospheric Radiation Measurements (ARM/UAV) program. HONER is a differential radiometer which will measure the difference between the total upwelling and downwelling fluxes and is intended to provide a means of measuring the atmospheric radiative flux divergence. Unlike existing instruments which measure the upwelling and downwelling fluxes separately, HONER will achieve an optical difference by chopping the two fluxes alternately onto a common pyroelectric detector. HONER will provide data resolved into two spectral bands; one covering the solar dominated region from less than 0.4 micrometer to approximately 4.5 micrometers and the other covering the region from approximately 4.5 micrometers to greater than 50 micrometers, dominated by thermal radiation. The means of separating the spectral regions guarantees seamless summation to calculate the total flux. The fields-of-view are near-hemispherical, upward and downward. The instrument can be converted, in flight, from the differential mode to absolute mode, measuring the upwelling and downwelling fluxes separately and simultaneously. The instrument also features continuous calibration from on-board sources. We will describe the design and operation of the sensor head and the on-board reference sources as well as the means of deployment.

  14. Atmospheric-pressure plasma decontamination/sterilization chamber

    DOE Patents [OSTI]

    Herrmann, Hans W.; Selwyn, Gary S.

    2001-01-01

    An atmospheric-pressure plasma decontamination/sterilization chamber is described. The apparatus is useful for decontaminating sensitive equipment and materials, such as electronics, optics and national treasures, which have been contaminated with chemical and/or biological warfare agents, such as anthrax, mustard blistering agent, VX nerve gas, and the like. There is currently no acceptable procedure for decontaminating such equipment. The apparatus may also be used for sterilization in the medical and food industries. Items to be decontaminated or sterilized are supported inside the chamber. Reactive gases containing atomic and metastable oxygen species are generated by an atmospheric-pressure plasma discharge in a He/O.sub.2 mixture and directed into the region of these items resulting in chemical reaction between the reactive species and organic substances. This reaction typically kills and/or neutralizes the contamination without damaging most equipment and materials. The plasma gases are recirculated through a closed-loop system to minimize the loss of helium and the possibility of escape of aerosolized harmful substances.

  15. The field experiments on the HTO washout from the atmosphere

    SciTech Connect (OSTI)

    Golubev, A.V.; Mavrin, S.V.; Golubeva, V.N.; Stengach, A.V.; Balashov, Y.S.; Kovalenko, V.P.; Solomatin, I.I.

    2015-03-15

    HTO (tritiated water) wash-out from the atmosphere is one of the key processes governing the HTO transport from the atmosphere into soil and plants. Experimental studies of the HTO interaction with water drops were carried out both in laboratories and in the field. In the course of experiments, the following rain characteristics were recorded: rain intensity, size distribution of drops, and falling velocities and their dependence on drop diameter. A laser optical device was designed and used to measure the distribution of the drop radius and velocities during the period of experiment. The tritium source was placed at a height of 30 m. Rainwater samples were collected in plastic bottles and their HTO activity was determined by liquid scintillation techniques. The data obtained for the experimental values of the scavenging rate are within the range from 4.12*10{sup -5} to 1.57*10{sup -4} s{sup -1} and correspond to the precipitation intensity from 0.3 to 1.26 mm/hour. These results are in sufficiently good agreement with the results of earlier papers.

  16. Multi-center airborne coherent atmospheric wind sensor (MACAWS)

    SciTech Connect (OSTI)

    Rothermel, J.; Menzies, R.T.; Tratt, D.M.

    1996-11-01

    The Multi-center Airborne Coherent Atmospheric Wind Sensor (MACAWS) is an airborne scanning coherent Doppler lidar designed to acquire remote multi-dimensional measurements of winds and absolute aerosol backscatter in the troposphere and lower stratosphere. These measurements enable study of atmospheric dynamic processes and features at scales of motion that may be undersampled by, or may be beyond the capability of, existing or planned sensors. MACAWS capabilities enable more realistic assessments of concepts in global tropospheric wind measurement with satellite Doppler lidar, as well as a unique capability to validate the NASA Scatterometer currently scheduled for launch in late 1996. MACAWS consists of a Joule-class CO{sub 2} coherent Doppler lidar on a ruggedized optical table, a programmable scanner to direct the lidar beam in the desired direction, and a dedicated inertial navigation system to account for variable aircraft attitude and speed. MACAWS was flown for the first time in September 1995, over the eastern Pacific Ocean and western US. 33 refs., 2 figs.

  17. Fibre optics: Forty years later

    SciTech Connect (OSTI)

    Dianov, Evgenii M

    2010-01-31

    This paper presents a brief overview of the state of the art in fibre optics and its main applications: optical fibre communications, fibre lasers and fibre sensors for various physical property measurements. The future of fibre optics and the status of this important area of the modern technology in Russia are discussed. (fiber optics)

  18. Fault location in optical networks

    DOE Patents [OSTI]

    Stevens, Rick C.; Kryzak, Charles J.; Keeler, Gordon A.; Serkland, Darwin K.; Geib, Kent M.; Kornrumpf, William P.

    2008-07-01

    One apparatus embodiment includes an optical emitter and a photodetector. At least a portion of the optical emitter extends a radial distance from a center point. The photodetector provided around at least a portion of the optical emitter and positioned outside the radial distance of the portion of the optical emitter.

  19. Embedded fiducials in optical surfaces

    DOE Patents [OSTI]

    Sommargren, Gary E.

    2000-01-01

    Embedded fiducials are provided in optical surfaces and a method for embedding the fiducials. Fiducials, or marks on a surface, are important for optical fabrication and alignment, particularly when individual optical elements are aspheres. Fiducials are used during the course of the polishing process to connect interferometric data, and the equation describing the asphere, to physical points on the optic. By embedding fiducials below the surface of the optic and slightly outside the clear aperture of the optic, the fiducials are not removed by polishing, do not interfere with the polishing process, and do not affect the performance of the finished optic.

  20. Non-equilibrium atmospheric pressure microplasma jet: An approach to endoscopic therapies

    SciTech Connect (OSTI)

    Zuo, Xiao; Wei, Yu; Wei Chen, Long; Dong Meng, Yue; Collaboration: Plasma Medicine Team

    2013-08-15

    Atmospheric pressure microplasma jet generated in a long hollow core optical fiber is studied to verify the potential feasibility of endoscopic therapies. Thermal damage and electric shock to the human body were suppressed by two technical methods, i.e., the high-voltage resistant flexible tube wrapped on the optical fiber and a power resistor of 100 k? connected between the power supply and the copper foil electrode. Optical emission spectra analysis indicated that many kinds of active radicals like excited atomic O and OH, were generated in the microplasma jet. In addition, the applications of the microplasma jet on sterilization and lung cancer cell apoptosis were presented. After 5 min of exposures to the microplasma jet, the cell viability and the bacillus subtilis replication decreased to about 3% and zero, respectively. More investigations are needed to improve the plasma-aided endoscopic therapies.

  1. Measurement and modeling of infrared nonlinear absorption coefficients and laser-induced damage thresholds in Ge and GaSb

    SciTech Connect (OSTI)

    Wagner, T. J.; Bohn, M. J.; Coutu, R. A. Jr.; Gonzalez, L. P.; Murray, J. M.; Guha, S.; Schepler, K. L.

    2010-10-15

    Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 {mu}m for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 {mu}m and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al{sub 2}O{sub 3} anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond pulses, respectively.

  2. Characteristics of GaAsSb single quantum well lasers emitting near 1.3 {micro}m

    SciTech Connect (OSTI)

    SPAHN,OLGA B.; KLEM,JOHN F.

    2000-02-17

    The authors report data on GaAsSb single quantum well lasers grown on GaAs substrates. Room temperature pulsed emission at 1.275 {micro}m in a 1,250 {micro}m-long device has been observed. Minimum threshold current densities of 535 A/cm{sup 2} were measured in 2000 {micro}m long lasers. The authors also measured internal losses of 2--5 cm{sup {minus}1}, internal quantum efficiencies of 30-38% and characteristic temperature T{sub 0} of 67--77 C. From these parameters a gain constant G{sub 0} of 1,660 cm{sup {minus}1} and a transparency current density J{sub tr} of 134 A/cm{sup 2} were calculated. The results indicate the potential for fabricating 1.3 {micro}m VCSELs from these materials.

  3. Atomic intermixing and interface roughness in short-period InAs/GaSb superlattices for infrared photodetectors

    SciTech Connect (OSTI)

    Ashuach, Y.; Lakin, E.; Kaufmann, Y.; Saguy, C.; Zolotoyabko, E.

    2014-09-28

    A set of advanced characterization methods, including high-resolution X-ray diffraction (measurements and simulations), cross-sectional scanning tunneling microscopy, and high-angle annular dark-field scanning transmission electron microscopy is applied to quantify the interface roughness and atomic intermixing (in both cation and anion sub-lattices) in short period (6–7 nm) InAs/GaSb superlattices intended for mid-wavelength (M) and long-wavelength (L) infrared detectors. The undesired atomic intermixing and interface roughness in the L-samples were found to be considerably lower than in the M-samples. In all specimens, anion intermixing is much higher than that in the cation sub-lattice. Possible origins of these findings are discussed.

  4. Transparent electrode for optical switch

    DOE Patents [OSTI]

    Goldhar, J.; Henesian, M.A.

    1984-10-19

    The invention relates generally to optical switches and techniques for applying a voltage to an electro-optical crystal, and more particularly, to transparent electodes for an optical switch. System architectures for very large inertial confinement fusion (ICF) lasers require active optical elements with apertures on the order of one meter. Large aperture optical switches are needed for isolation of stages, switch-out from regenerative amplifier cavities and protection from target retroreflections.

  5. Structural characterization of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature using neutron powder diffraction and extended X-ray absorption fine structure techniques

    SciTech Connect (OSTI)

    Mansour, A. N.; Wong-Ng, W.; Huang, Q.; Tang, W.; Thompson, A.; Sharp, J.

    2014-08-28

    The structure of Bi{sub 2}Te{sub 3} (Seebeck coefficient Standard Reference Material (SRM™ 3451)) and the related phase Sb{sub 2}Te{sub 3} have been characterized as a function of temperature using the neutron powder diffraction (NPD) and the extended X-ray absorption fine structure (EXAFS) techniques. The neutron structural studies were carried out from 20 K to 300 K for Bi{sub 2}Te{sub 3} and from 10 K to 298 K for Sb{sub 2}Te{sub 3}. The EXAFS technique for studying the local structure of the two compounds was conducted from 19 K to 298 K. Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} are isostructural, with a space group of R3{sup ¯}m. The structure consists of repeated quintuple layers of atoms, Te2-M-Te1-M-Te2 (where M = Bi or Sb) stacking along the c-axis of the unit cell. EXAFS was used to examine the bond distances and static and thermal disorders for the first three shells of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature. The temperature dependencies of thermal disorders were analyzed using the Debye and Einstein models for lattice vibrations. The Debye and Einstein temperatures for the first two shells of Bi{sub 2}Te{sub 3} are similar to those of Sb{sub 2}Te{sub 3} within the uncertainty in the data. However, the Debye and Einstein temperatures for the third shell of Bi-Bi are significantly lower than those of the third shell of Sb-Sb. The Einstein temperature for the third shell is consistent with a soft phonon mode in both Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3}. The lower Einstein temperature of Bi-Bi relative to Sb-Sb is consistent with the lower value of thermal conductivity of Bi{sub 2}Te{sub 3} relative to Sb{sub 2}Te{sub 3}.

  6. Optics Supply Planning System

    SciTech Connect (OSTI)

    Gaylord, J

    2009-04-30

    The purpose of this study is to specify the design for an initial optics supply planning system for NIF, and to present quality assurance and test plans for the construction of the system as specified. The National Ignition Facility (NIF) is a large laser facility that is just starting operations. Thousands of specialized optics are required to operate the laser, and must be exchanged over time based on the laser shot plan and predictions of damage. Careful planning and tracking of optic exchanges is necessary because of the tight inventory of spare optics, and the long lead times for optics procurements and production changes. Automated inventory forecasting and production planning tools are required to replace existing manual processes. The optics groups members who are expected to use the supply planning system are the stakeholders for this project, and are divided into three groups. Each of these groups participated in a requirements specification that was used to develop this design. (1) Optics Management--These are the top level stakeholdersk, and the final decision makers. This group is the interface to shot operations, is ultimately responsible for optics supply, and decides which exchanges will be made. (2) Work Center Managers--This group manages the on site optics processing work centers. They schedule the daily work center operations, and are responsible for developing long term processing, equipment, and staffing plans. (3) Component Engineers--This group manages the vendor contracts for the manufacture of new optics and the off site rework of existing optics. They are responsible for sourcing vendors, negotiating contracts, and managing vendor processes. The scope of this analysis is to describe the structure and design details of a system that will meet all requirements that were described by stakeholders and documented in the analysis model for this project. The design specifies the architecture, components, interfaces, and data stores of the system

  7. SWiFT site atmospheric characterization

    SciTech Connect (OSTI)

    Kelley, Christopher Lee; Ennis, Brandon Lee

    2016-01-01

    Historical meteorological tall tower data are analyzed from the Texas Tech University 200 m tower to characterize the atmospheric trends of the Scaled Wind Farm Technologies (SWiFT) site. In this report the data are analyzed to reveal bulk atmospheric trends, temporal trends and correlations of atmospheric variables. Through this analysis for the SWiFT turbines the site International Electrotechnical Commission (IEC) classification is determined to be class III-C. Averages and distributions of atmospheric variables are shown, revealing large fluctuations and the importance of understanding the actual site trends as opposed to simply using averages. The site is significantly directional with the average wind speed from the south, and particularly so in summer and fall. Site temporal trends are analyzed from both seasonal (time of the year) to daily (hour of the day) perspectives. Atmospheric stability is seen to vary most with time of day and less with time of year. Turbulence intensity is highly correlated with stability, and typical daytime unstable conditions see double the level of turbulence intensity versus that experienced during the average stable night. Shear, veer and atmospheric stability correlations are shown, where shear and veer are both highest for stable atmospheric conditions. An analysis of the Texas Tech University tower anemometer measurements is performed which reveals the extent of the tower shadow effects and sonic tilt misalignment.

  8. Fiber optic hydrogen sensor

    DOE Patents [OSTI]

    Buchanan, B.R.; Prather, W.S.

    1992-10-06

    An apparatus and method are described for detecting a chemical substance by exposing an optic fiber having a core and a cladding to the chemical substance so that the chemical substance can be adsorbed onto the surface of the cladding. The optic fiber is coiled inside a container having a pair of valves for controlling the entrance and exit of the substance. Light from a light source is received by one end of the optic fiber, preferably external to the container, and carried by the core of the fiber. Adsorbed substance changes the transmissivity of the fiber as measured by a spectrophotometer at the other end, also preferably external to the container. Hydrogen is detected by the absorption of infrared light carried by an optic fiber with a silica cladding. Since the adsorption is reversible, a sensor according to the present invention can be used repeatedly. Multiple positions in a process system can be monitored using a single container that can be connected to each location to be monitored so that a sample can be obtained for measurement, or, alternatively, containers can be placed near each position and the optic fibers carrying the partially-absorbed light can be multiplexed for rapid sequential reading by a single spectrophotometer. 4 figs.

  9. Fiber optic hydrogen sensor

    DOE Patents [OSTI]

    Buchanan, B.R.; Prather, W.S.

    1991-01-01

    Apparatus and method for detecting a chemical substance by exposing an optic fiber having a core and a cladding to the chemical substance so that the chemical substance can be adsorbed onto the surface of the cladding. The optic fiber is coiled inside a container having a pair of valves for controlling the entrance and exit of the substance. Light from a light source is received by one end of the optic fiber, preferably external to the container, and carried by the core of the fiber. Adsorbed substance changes the transmissivity of the fiber as measured by a spectrophotometer at the other end, also preferably external to the container. Hydrogen is detected by the absorption of infrared light carried by an optic fiber with a silica cladding. Since the adsorption is reversible, a sensor according to the present invention can be used repeatedly. Multiple positions in a process system can be monitored using a single container that can be connected to each location to be monitored so that a sample can be obtained for measurement, or, alternatively, containers can be placed near each position and the optic fibers carrying the partially-absorbed light can be multiplexed for rapid sequential reading, by a single spectrophotometer.

  10. Optical high acidity sensor

    DOE Patents [OSTI]

    Jorgensen, B.S.; Nekimken, H.L.; Carey, W.P.; O`Rourke, P.E.

    1997-07-22

    An apparatus and method for determining acid concentrations in solutions having acid concentrations of from about 0.1 Molar to about 16 Molar is disclosed. The apparatus includes a chamber for interrogation of the sample solution, a fiber optic light source for passing light transversely through the chamber, a fiber optic collector for receiving the collimated light after transmission through the chamber, a coating of an acid resistant polymeric composition upon at least one fiber end or lens, the polymeric composition in contact with the sample solution within the chamber and having a detectable response to acid concentrations within the range of from about 0.1 Molar to about 16 Molar, a measurer for the response of the polymeric composition in contact with the sample solution, and a comparer of the measured response to predetermined standards whereby the acid molarity of the sample solution within the chamber can be determined. Preferably, a first lens is attached to the end of the fiber optic light source, the first lens adapted to collimate light from the fiber optic light source, and a second lens is attached to the end of the fiber optic collector for focusing the collimated light after transmission through the chamber. 10 figs.

  11. Optical high acidity sensor

    DOE Patents [OSTI]

    Jorgensen, Betty S.; Nekimken, Howard L.; Carey, W. Patrick; O'Rourke, Patrick E.

    1997-01-01

    An apparatus and method for determining acid concentrations in solutions having acid concentrations of from about 0.1 Molar to about 16 Molar is disclosed. The apparatus includes a chamber for interrogation of the sample solution, a fiber optic light source for passing light transversely through the chamber, a fiber optic collector for receiving the collimated light after transmission through the chamber, a coating of an acid resistant polymeric composition upon at least one fiber end or lens, the polymeric composition in contact with the sample solution within the chamber and having a detectable response to acid concentrations within the range of from about 0.1 Molar to about 16 Molar, a measurer for the response of the polymeric composition in contact with the sample solution, and, a comparer of the measured response to predetermined standards whereby the acid molarity of the sample solution within the chamber can be determined. Preferably, a first lens is attached to the end of the fiber optic light source, the first lens adapted to collimate light from the fiber optic light source, and a second lens is attached to the end of the fiber optic collector for focusing the collimated light after transmission through the chamber.

  12. Optical key system

    SciTech Connect (OSTI)

    Hagans, Karla G.; Clough, Robert E.

    2000-01-01

    An optical key system comprises a battery-operated optical key and an isolated lock that derives both its operating power and unlock signals from the correct optical key. A light emitting diode or laser diode is included within the optical key and is connected to transmit a bit-serial password. The key user physically enters either the code-to-transmit directly, or an index to a pseudorandom number code, in the key. Such person identification numbers can be retained permanently, or ephemeral. When a send button is pressed, the key transmits a beam of light modulated with the password information. The modulated beam of light is received by a corresponding optical lock with a photovoltaic cell that produces enough power from the beam of light to operate a password-screen digital logic. In one application, an acceptable password allows a two watt power laser diode to pump ignition and timing information over a fiberoptic cable into a sealed engine compartment. The receipt of a good password allows the fuel pump, spark, and starter systems to each operate. Therefore, bypassing the lock mechanism as is now routine with automobile thieves is pointless because the engine is so thoroughly disabled.

  13. Optical key system

    SciTech Connect (OSTI)

    Hagans, K.G.; Clough, R.E.

    2000-04-25

    An optical key system comprises a battery-operated optical key and an isolated lock that derives both its operating power and unlock signals from the correct optical key. A light emitting diode or laser diode is included within the optical key and is connected to transmit a bit-serial password. The key user physically enters either the code-to-transmit directly, or an index to a pseudorandom number code, in the key. Such person identification numbers can be retained permanently, or ephemeral. When a send button is pressed, the key transmits a beam of light modulated with the password information. The modulated beam of light is received by a corresponding optical lock with a photovoltaic cell that produces enough power from the beam of light to operate a password-screen digital logic. In one application, an acceptable password allows a two watt power laser diode to pump ignition and timing information over a fiberoptic cable into a sealed engine compartment. The receipt of a good password allows the fuel pump, spark, and starter systems to each operate. Therefore, bypassing the lock mechanism as is now routine with automobile thieves is pointless because the engine is so thoroughly disabled.

  14. Fiber optic hydrogen sensor

    DOE Patents [OSTI]

    Buchanan, Bruce R.; Prather, William S.

    1992-01-01

    An apparatus and method for detecting a chemical substance by exposing an optic fiber having a core and a cladding to the chemical substance so that the chemical substance can be adsorbed onto the surface of the cladding. The optic fiber is coiled inside a container having a pair of valves for controlling the entrance and exit of the substance. Light from a light source is received by one end of the optic fiber, preferably external to the container, and carried by the core of the fiber. Adsorbed substance changes the transmissivity of the fiber as measured by a spectrophotometer at the other end, also preferably external to the container. Hydrogen is detected by the absorption of infrared light carried by an optic fiber with a silica cladding. Since the adsorption is reversible, a sensor according to the present invention can be used repeatedly. Multiple positions in a process system can be monitored using a single container that can be connected to each location to be monitored so that a sample can be obtained for measurement, or, alternatively, containers can be placed near each position and the optic fibers carrying the partially-absorbed light can be multiplexed for rapid sequential reading by a single spectrophotometer.

  15. Method of fabricating optical waveguides by ion implantation doping

    DOE Patents [OSTI]

    Appleton, B.R.; Ashley, P.R.; Buchal, C.J.

    1987-03-24

    A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO/sub 3/ crystals are implanted with high concentrations of Ti dopant at ion energies of about 360 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000/degree/C produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguiding properties.

  16. Method of fabricating optical waveguides by ion implantation doping

    DOE Patents [OSTI]

    Appleton, Bill R.; Ashley, Paul R.; Buchal, Christopher J.

    1989-01-01

    A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO.sub.3 crystals are implanted with high concentrations of Ti dopant at ion energies of about 350 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000.degree. C. produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality single crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguides properties.

  17. Niamey Aerosol Optical Depths

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Flynn, Connor

    2008-10-01

    MFRSR irradiance data collected during the ACRF AMF deployment in Niamey, Niger have been used to derive AOD for five wavelength channels of the MFRSR. These data have been corrected to adjust for filter drift over the course of the campaign and contamination due to forward scattering as a result of large dust particles in the atmosphere around Niamey.

  18. Interactive optical panel

    DOE Patents [OSTI]

    Veligdan, James T.

    1995-10-03

    An interactive optical panel assembly 34 includes an optical panel 10 having a plurality of ribbon optical waveguides 12 stacked together with opposite ends thereof defining panel first and second faces 16, 18. A light source 20 provides an image beam 22 to the panel first face 16 for being channeled through the waveguides 12 and emitted from the panel second face 18 in the form of a viewable light image 24a. A remote device 38 produces a response beam 40 over a discrete selection area 36 of the panel second face 18 for being channeled through at least one of the waveguides 12 toward the panel first face 16. A light sensor 42,50 is disposed across a plurality of the waveguides 12 for detecting the response beam 40 therein for providing interactive capability.

  19. Interactive optical panel

    DOE Patents [OSTI]

    Veligdan, J.T.

    1995-10-03

    An interactive optical panel assembly includes an optical panel having a plurality of ribbon optical waveguides stacked together with opposite ends thereof defining panel first and second faces. A light source provides an image beam to the panel first face for being channeled through the waveguides and emitted from the panel second face in the form of a viewable light image. A remote device produces a response beam over a discrete selection area of the panel second face for being channeled through at least one of the waveguides toward the panel first face. A light sensor is disposed across a plurality of the waveguides for detecting the response beam therein for providing interactive capability. 10 figs.

  20. Constraining the atmospheric composition of the day-night terminators of HD 189733b: Atmospheric retrieval with aerosols

    SciTech Connect (OSTI)

    Lee, Jae-Min; Irwin, Patrick G. J.; Fletcher, Leigh N.; Barstow, Joanna K.; Heng, Kevin

    2014-07-01

    A number of observations have shown that Rayleigh scattering by aerosols dominates the transmission spectrum of HD 189733b at wavelengths shortward of 1 ?m. In this study, we retrieve a range of aerosol distributions consistent with transmission spectroscopy between 0.3-24 ?m that were recently re-analyzed by Pont et al. To constrain the particle size and the optical depth of the aerosol layer, we investigate the degeneracies between aerosol composition, temperature, planetary radius, and molecular abundances that prevent unique solutions for transit spectroscopy. Assuming that the aerosol is composed of MgSiO{sub 3}, we suggest that a vertically uniform aerosol layer over all pressures with a monodisperse particle size smaller than about 0.1 ?m and an optical depth in the range 0.002-0.02 at 1 ?m provides statistically meaningful solutions for the day/night terminator regions of HD 189733b. Generally, we find that a uniform aerosol layer provide adequate fits to the data if the optical depth is less than 0.1 and the particle size is smaller than 0.1 ?m, irrespective of the atmospheric temperature, planetary radius, aerosol composition, and gaseous molecules. Strong constraints on the aerosol properties are provided by spectra at wavelengths shortward of 1 ?m as well as longward of 8 ?m, if the aerosol material has absorption features in this region. We show that these are the optimal wavelengths for quantifying the effects of aerosols, which may guide the design of future space observations. The present investigation indicates that the current data offer sufficient information to constrain some of the aerosol properties of HD189733b, but the chemistry in the terminator regions remains uncertain.