Powered by Deep Web Technologies
Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

2

In: Proceedings of the 1995 International environmental conference; 1995 May 7-10; Atlanta, GA. Atlanta, GA: TAPPI PRESS: 445-448; 1995.  

E-Print Network [OSTI]

. Atlanta, GA: TAPPI PRESS: 445-448; 1995. ENVIRONMENTALLY SOUND ALTERNATIVES FOR UPGRADING MIXED OFFICE

Abubakr, Said

3

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

4

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical  

E-Print Network [OSTI]

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

Iosup, Alexandru

5

UNITED STATES ENVIRONMENTAL PROTECTION AGENCY ATLANTA FEDERAL CENTER  

E-Print Network [OSTI]

Number 2001-10096 Subject: COE Regulatory Final Environmental Impact Statement (FEIS) for "PCS Phosphate) regulatory Final Environmental Impact Statement (FEIS). This FEIS evaluates the environmental consequencesUNITED STATES ENVIRONMENTAL PROTECTION AGENCY REGION 4 ATLANTA FEDERAL CENTER 61 FORSYTH STREET

Demers, Nora Egan

6

E-Print Network 3.0 - atlanta ga usa Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Physics and Astronomy, Georgia State University, Atlanta, Georgia... 30303, USA 3 NDP Optronics, Mableton, Georgia 30126, USA *Corresponding author: wzshen... -band imaging device,...

7

Source Apportionment of Daily Fine Particulate Matter at Jefferson Street, Atlanta, GA, during Summer and Winter  

E-Print Network [OSTI]

, especially wood burning, as well as vehicular exhaust, and suggest that secondary aerosol for- mation dominates in summer in Atlanta. TECHNICAL PAPER ISSN 1047-3289 J. Air & Waste Manage. Assoc. 57:228­242 Copyright 2007 Air & Waste Management Association 228 Journal of the Air & Waste Management Association

Zheng, Mei

8

Atlanta Survey  

U.S. Energy Information Administration (EIA) Indexed Site

Profile of Motor-Vehicle Fleets in Atlanta 1994 Profile of Motor-Vehicle Fleets in Atlanta 1994 Assessing the Market for Alternative-Fuel Vehicles 13 Data Tables for Private Fleets There are two types of tables. One type provides counts of the number of fleets that fall into various categories of data. The other provides counts of the number of vehicles by characteristics. Where only fleet data are provided instead of vehicle data, it means that particular questionnaire item was asked at the fleet level only. Vehicle questions were recorded by type of vehicle not by individual vehicle. Table 1. Number of Private Fleets in Atlanta by Fleet Size and Selected Characteristics Fleet Size (number of vehicles) Selected Characteristics Total 6 to 19 20 to 49 50 or More Total Number of Fleets . . . . . . . . . . . . . . . 3,589

9

2009 National Electric Transmission Congestion Study - Atlanta Workshop |  

Broader source: Energy.gov (indexed) [DOE]

2009 National Electric Transmission Congestion Study - Atlanta 2009 National Electric Transmission Congestion Study - Atlanta Workshop 2009 National Electric Transmission Congestion Study - Atlanta Workshop On July 29, 2008, DOE hosted a regional pre-study workshop in Atlanta, GA to receive input and suggestions concerning the 2009 National Electric Transmission Congestion Study. The agenda and full transcript are available below. 7-29-08 Congestion Workshop Agenda - Atlanta, GA.pdf Transcript - 2009 National Electric Transmission Congestion Study Atlanta Workshop.pdf More Documents & Publications 2009 National Electric Transmission Congestion Study - San Francisco Workshop 2012 National Electric Transmission Congestion Study - St. Louis Workshop 2009 National Electric Transmission Congestion Study - Las Vegas Workshop

10

EECBG Success Story: Atlanta Suburb Greases the Path to Savings...  

Energy Savers [EERE]

Atlanta Suburb Greases the Path to Savings with Biodiesel The new energy efficient IT Data Center in Savannah, Georgia. | Courtesy of the City of Savannah, GA. EECBG Success...

11

Atlanta Chemical Engineering LLC | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » Atlanta Chemical Engineering LLC Jump to: navigation, search Logo: Atlanta Chemical Engineering LLC Name Atlanta Chemical Engineering LLC Place Marietta, Georgia Zip 30064 Country United States Sector Biomass Year founded 2008 Company Type For Profit Company Ownership Private Small Business Yes References Atlanta Chemical Engineering LLC[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Atlanta Chemical Engineering LLC is a company based in Marietta, Georgia. References ↑ "Atlanta Chemical Engineering LLC" Retrieved from "http://en.openei.org/w/index.php?title=Atlanta_Chemical_Engineering_LLC&oldid=699086"

12

Atlanta, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Atlanta, Georgia: Energy Resources Atlanta, Georgia: Energy Resources (Redirected from Atlanta, GA) Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.7489954°, -84.3879824° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.7489954,"lon":-84.3879824,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

13

TEC Rail TG Summary_Atlanta  

Broader source: Energy.gov (indexed) [DOE]

March 5-6, 2007 Atlanta, GA March 5-6, 2007 Atlanta, GA Rail Topic Group Alex Thrower began the meeting and welcomed all topic group participants and support contractor staff. Mr. Thrower established that the following issues and sub-topic group matters required further consideration and in some cases next steps needed to be planned. These include: Inspections Checklist Mr. Thrower requested that members submit their feedback on the items inspected during point of origin and en route inspections in the form of a short listing. Next steps involve: * Presenting the checklist to Federal Railroad Administration (FRA) state managers in a preliminary format; * Discussions with DOT in regard to formatting the checklist; and * Development of a complete reference list to be placed onto blue cards to be used

14

Atlanta- Sustainable Development Design Standards  

Broader source: Energy.gov [DOE]

In December 2003, the City of Atlanta passed a green building [http://www.atlantaga.gov/modules/showdocument.aspx?documentid=547 ordinance] that applies to city-owned facilities and city-funded...

15

Atlanta TEC Meeting -- Tribal Group Summary 3-6-07  

Broader source: Energy.gov (indexed) [DOE]

Atlanta, GA - January 31, 2007 Atlanta, GA - January 31, 2007 Session Chaired by: Jay Jones (DOE, Office of Civilian Radioactive Waste Management, OCRWM) Regular Members in Attendance: Kenny Anderson (Las Vegas Paiute Tribe), Richard Arnold (Las Vegas Indian Center/Pahrump Paiute Tribe), Tony Boyd (Pueblo of Acoma), Rob Burnside (Confederated Tribes of the Umatilla Indian Reservation, CTUIR), Floyd Chaney (Mohegan Tribe), Sandra Covi (Union Pacific Railroad), Martha Crosland (DOE/Office of General Counsel, GC), Kristen Ellis (DOE/Intergovernmental and External Affairs, CI), Frank Gavigan (Mohegan Tribe), Ed Gonzales (ELG Engineering/Pueblo de San Ildefonso), Robert Gruenig (National Tribal Environmental Council, NTEC), Paloma Hill (OCRWM Intern), Judith Holm (OCRWM), Gayl Honanie (Hopi Tribe), Lisa Janairo

16

City of Atlanta Video (Text Version)  

Broader source: Energy.gov [DOE]

Aaron Bastian: According to the U.S. EPA, Atlanta is one of the top ten cities in the country for green buildings. It is a city that is walk and bike friendly, and now Atlanta is second in the...

17

Atlanta NAVIGATOR case study. Final report, May 1996--Jun 1997  

SciTech Connect (OSTI)

The Atlanta metropolitan region was the location of one of the most ambitious Intelligent Transportation Systems (ITS) deployments in the United States. This deployment included several individual projects--a Central Transportation Management Center (TMC), six Traffic Control Centers (TCC), one Transit Information Center (TIC), the Travel Information Showcase (TIS), and the extension of the Metropolitan Atlanta Rapid Transit Authority (MARTA) rail network and the new high-occupancy vehicle (HOV) lanes on I-85 and I-75. The Atlanta Centennial Olympic Games and Paralympic Games created a focus for these projects. All of these systems were to be brought on line in time for the Olympic Games. This report presents the findings of the NAVIGATOR Case Study and documents the lessons learned from the Atlanta ITS deployment experience in order to improve other ITS deployments in the future. The Case Study focuses on the institutional, programmatic, and technical issues and opportunities from planning and implementing the ITS deployment in Atlanta. The Case Study collected data and information from interviews, observations, focus groups, and documentation reviews. It presents a series of lessons learned and recommendations for enabling successful ITS deployments nationwide.

Amodei, R.; Bard, E.; Brong, B.; Cahoon, F.; Jasper, K.

1998-11-01T23:59:59.000Z

18

Microsoft PowerPoint - 6-03 DOE EM TEM Atlanta AREVA CCIM final 111010.ppt  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

November 17, 2010 November 17, 2010 Next-Generation Induction Melter Technology Development DOE EM Waste Processing Technical Exchange, Nov 16-18, 2010, Atlanta, GA Eric Tchemitcheff, AFS Print Close > DOE EM Waste Processing Technical Exchange - Nov 16-18, 2010 - Atlanta, GA 3 Presentation Outline Introduction CCIM Key Attributes CCIM Target Performance for Hanford WTP Applications EM Tank Waste R&D Plan Initiative 5.2.1  Scope and Objectives - CCIM Project CCIM Project - Proposed HLW Tasks and Milestones CCIM Project - Proposed LAW Tasks and Milestones CCIM Project - Summary FY10 Accomplishments CCIM Project - Anticipated Near-term Outcomes CCIM Project - Summary - Focus Areas Print Close > DOE EM Waste Processing Technical Exchange - Nov 16-18, 2010 - Atlanta, GA 4 DOE EM radwaste vitrification processing challenges are

19

Performance improvements of ultraviolet/infrared dual-band detectors A.G.U. Perera a,*, G. Ariyawansa a  

E-Print Network [OSTI]

University, Atlanta, GA 30303, United States b NDP Optronics, Mableton, GA 30126, United States c School

Dietz, Nikolaus

20

Siting and sizing of distributed generation units using GA and OPF  

Science Journals Connector (OSTI)

This paper deals with the important task of finding the optimal siting and sizing of Distributed Generation (DG) units for a given distribution network so that the cost of active and reactive power generation can be minimized. The optimization technique ... Keywords: distributed generation, genetic alghorithm(GA), optimal power flow(OPF)

M. Hosseini Aliabadi; M. Mardaneh; B. Behbahan

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Better Buildings Challenge, Atlanta Nears Halfway Mark in Meeting...  

Broader source: Energy.gov (indexed) [DOE]

Challenge Breakout Session Panel with representatives from the City of Atlanta Office of Sustainability, Southface, the U.S. General Services Administration, and two Atlanta BBC...

22

Federal Utility Partnership Working Group: Atlanta Gas Light...  

Broader source: Energy.gov (indexed) [DOE]

Group: Atlanta Gas Light Resources Federal Utility Partnership Working Group: Atlanta Gas Light Resources Presentation-given at the April 2012 Federal Utility Partnership Working...

23

Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

Atlanta Airport Atlanta Airport Converts Shuttles to CNG to someone by E-mail Share Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Facebook Tweet about Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Twitter Bookmark Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Google Bookmark Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Delicious Rank Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Digg Find More places to share Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on AddThis.com... Sept. 9, 2012 Atlanta Airport Converts Shuttles to CNG L earn how an Atlanta company saves money and conserves fuel with compressed natural gas airport shuttles.

24

Microsoft Word - Transcript_Pre-2009 Congestion Study_Atlanta.doc  

Broader source: Energy.gov (indexed) [DOE]

7/29/2008 7/29/2008 Atlanta, GA Page 1 U.S. Department of Energy Pre-Congestion Study Regional Workshops for the 2009 National Electric Congestion Study Atlanta, GA July 29, 2008 9:00 a.m.-12:30 p.m. Transcript David Meyer: Ladies and gentlemen, I'm David Meyer from the Department of Energy. I want to welcome you to our workshop for upcoming 2009 congestion studies. I'm going to make a short presentation here scoping out what we have in mind and what our purposes are in holding this workshop. But, before I do that, I want to introduce some of my colleagues here, particularly Lot Cooke who is from our General Counsel's office. Several other people from my office at the Department of Energy: Mark Whitenton and Elliott Nethercutt; and Elizabeth

25

Workplace Charging Challenge Partner: City of Atlanta | Department...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Partner City of Atlanta. View more videos on the Alternative Fuels and Advanced Vehicles Data Center. Skyline view of the City of Atlanta at sunset. Text version Meet Challenge...

26

E-Print Network 3.0 - atlanta georgia metropolitan Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: University; Atlanta, Georgia September 1996 - Assistant Professor of Political Science Emory University... ; Atlanta, Georgia September 1993 - August 1996 On...

27

Atlanta Community Leaders' Institute Conference | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference April 15, 2013 - 1:31pm Addthis Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. What does this project do? Goal 1. Protect human health and the environment The Atlanta Community Leaders Institute (CLI) held a conference on February 8 and 9 at Morehouse School of Medicine, in Atlanta, Georgia. The conference was sponsored by the Medical University of South Carolina, U.S. Department of Energy, Southeastern Virtual Institute for Health and Wellness, U.S. Department of Defense, DeKalb County, Morehouse School of

28

Atlanta Community Leaders' Institute Conference | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference April 15, 2013 - 1:31pm Addthis Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. What does this project do? Goal 1. Protect human health and the environment The Atlanta Community Leaders Institute (CLI) held a conference on February 8 and 9 at Morehouse School of Medicine, in Atlanta, Georgia. The conference was sponsored by the Medical University of South Carolina, U.S. Department of Energy, Southeastern Virtual Institute for Health and Wellness, U.S. Department of Defense, DeKalb County, Morehouse School of

29

Building America Technology Solutions for New and Existing Homes: Ground Source Heat Pump Research, TaC Studios Residence, Atlanta, Georigia (Fact Sheet),  

Broader source: Energy.gov [DOE]

This case study describes the construction of a new test home in Atlanta, GA, that demonstrates current best practices for the mixed-humid climate, including a building envelope featuring advanced air sealing details and low density spray foam insulation, glazing that exceeds ENERGY STAR requirements, and a high performance heating and cooling system.

30

Making Connections for Atlanta Students | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Making Connections for Atlanta Students Making Connections for Atlanta Students Making Connections for Atlanta Students June 4, 2013 - 4:29pm Addthis Mary Shoemaker A rising senior at Georgia Tech Editor's note: In the last week in April, Director Dot Harris of the U.S. Department of Energy's Office of Economic Impact and Diversity gathered alongside local energy leaders at Clark Atlanta University for the Atlanta Students in Energy and Climate Forum. Mary Shoemaker, a rising senior at Georgia Tech, was one of the student speakers at the event. The following is her perspective of the event. On a beautiful afternoon in April, I found myself surrounded by like-minded individuals: students, entrepreneurs, and professors gathered to share experiences and motivations in their pursuit of environmental stewardship.

31

E-Print Network 3.0 - atlanta urban rain Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(2008). Shem and Shepherd (2009) noted that Atlanta creates enhanced convergence at the rural-urban... delineation of urban convection for Atlanta, Georgia. Int. J. Climatol., 30,...

32

Microsoft Word - Atlanta Agenda FINAL _2_.doc  

Broader source: Energy.gov (indexed) [DOE]

Westin Peachtree Plaza Hotel Westin Peachtree Plaza Hotel Atlanta, Georgia July 29, 2008 AGENDA 8:00 - 9:00 am Registration 9:00 - 9:15 am DOE Presentation Plans for the 2009 Congestion Study and Objectives of Workshop 9:15 - 10:30 am Panel I Panelists: Cindy Miller, Senior Attorney, Office of General Counsel, Florida Public Service Commission The Honorable Jim Sullivan, President, Alabama Public Service Commission Charles Terreni, Executive Director, South Carolina Public Service Commission Burl D. Till, III, Manager, Transmission Planning Department, Tennessee Valley Authority The Honorable Stan Wise, Commissioner, Georgia Public Service Commission 10:30 -10:45 am Break 10:45 - 12:00 pm Panel II Panelists: George Bartlett, Director, Transmission Planning and Operations, Entergy Services

33

Terahertz absorption in AlGaAs films and detection using heterojunctions  

E-Print Network [OSTI]

a Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA b NDP Optronics, LLC-mail address: uperera@gsu.edu (A.G.U. Perera). 1 Also at NDP Optronics LLC. Infrared Physics & Technology 47

Perera, A. G. Unil

34

Atlanta Centennial Olympic Games and Paralympic Games event study, 1996. Final report, July 1996--August 1996  

SciTech Connect (OSTI)

The Atlanta metropolitan region was the location of one of the most ambitious Intelligent Transportation Systems (ITS) deployments in the United States. This deployment included several individual projects--a Central Transportation Management Center (TMC), six Traffic Control Centers (TCCs), one Transit Information Center (TIC), The Travel Information Showcase (TIS), and the extension of the Metropolitan Atlanta Rapid Transit Authority (MARTA) Rail network and the new high-occupancy vehicle (HOV) lanes on I-85 and I-75. The 1996 Atlanta Centennial Olympic Games and Paralympic Games created a focus for these projects. All of these systems were to be brought on-line in time for the Olympic Games. This report presents the findings of the 1996 Olympic and Paralympic Games Events Study--a compilation of findings of system performance, the benefits realized, and the lessons learned during their operations over the event period. The study assessed the performance of the various Travel Demand Management (TDM) plans employed for Olympic Games traffic management.

Amodei, R.; Bard, E.; Brong, B.; Cahoon, F.; Jasper, K.

1998-11-01T23:59:59.000Z

35

Microsoft Word - Final TEC Notes Atlanta 07.doc  

Broader source: Energy.gov (indexed) [DOE]

TRANSPORTATION EXTERNAL COORDINATION WORKING GROUP MEETING January 31-February 1, 2007 Atlanta, Georgia Welcome and Meeting Overview The U.S. Department of Energy (DOE), Transportation External Coordination Working Group (TEC) held its 27th meeting on January 31-February 1, 2007, in Atlanta, Georgia. One hundred thirteen participants, representing national, State, Tribal, and local government; industry; professional organizations; and other interested parties, met to address a variety of issues related to DOE's radioactive materials transportation activities. The TEC process includes the involvement of these key stakeholders in developing solutions to DOE transportation issues through their actual participation in the work product. These members

36

UNIT NUMBER  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

1 UNIT NAME C-611 Underaround Gasoline Tank REGULATORY STATUS: AOC LOCATION: Immediately east of C-61l APPROXIMATE DIMENSIONS: 50 ga on FUNCTION: Gasoline storage OPERATIONAL...

37

Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011  

Broader source: Energy.gov (indexed) [DOE]

Needs and Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting Atlanta, Georgia - March 16-18, 2011 May 2011 ii NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or

38

North Atlanta, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

North Atlanta, Georgia: Energy Resources North Atlanta, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.8651033°, -84.3365917° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.8651033,"lon":-84.3365917,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

39

Better Buildings Challenge, Atlanta Nears Halfway Mark in Meeting Citywide Goal of 20% Energy Savings  

Broader source: Energy.gov [DOE]

The Energy Department yesterday recognized Atlanta for its progress and leadership in meeting a citywide goal to improve the energy performance of its buildings by 20% by 2020.

40

Epidemiology of Seafood-Associated Infections in the United States  

Science Journals Connector (OSTI)

...April 2010 ARTICLE REVIEWS Epidemiology of Seafood-Associated Infections in the United States...and Prevention, Atlanta, Georgia Summary: Seafood is part of a healthful diet, but seafood consumption is not risk-free. Seafood is...

Martha Iwamoto; Tracy Ayers; Barbara E. Mahon; David L. Swerdlow

2010-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Statement by Energy Secretary Steven Chu on Opening of Atlanta Job Training  

Broader source: Energy.gov (indexed) [DOE]

Opening of Atlanta Job Opening of Atlanta Job Training Center Statement by Energy Secretary Steven Chu on Opening of Atlanta Job Training Center October 26, 2010 - 12:00am Addthis WASHINGTON, D.C. - U.S. Energy Secretary Steven Chu issued the following statement on today's grand opening of the Southeast Weatherization & Energy Efficiency Training (SWEET) Center in Atlanta, Georgia. "The SWEET Center in Atlanta will play a critical role in training thousands of workers for new jobs, laying the foundation for continued growth in this developing industry. With help from the Recovery Act, this program will provide workers with the skills they need to offer local homeowners quality energy efficiency upgrades that will save them money by saving energy." BACKGROUND INFORMATION ON TODAY'S ANNOUNCEMENT

42

Building America Case Study: Ground Source Heat Pump Research, TaC Studios Residence, Atlanta, Georigia (Fact Sheet)  

SciTech Connect (OSTI)

As part of the NAHB Research Center Industry Partnership, Southface partnered with TaC Studios, an Atlanta based architecture firm specializing in residential and light commercial design, on the construction of a new test home in Atlanta, GA in the mixed-humid climate. This home serves as a residence and home office for the firm's owners, as well as a demonstration of their design approach to potential and current clients. Southface believes the home demonstrates current best practices for the mixed-humid climate, including a building envelope featuring advanced air sealing details and low density spray foam insulation, glazing that exceeds ENERGY STAR requirements, and a high performance heating and cooling system. Construction quality and execution was a high priority for TaC Studios and was ensured by a third party review process. Post construction testing showed that the project met stated goals for envelope performance, an air infiltration rate of 2.15 ACH50. The homeowner's wished to further validate whole house energy savings through the project's involvement with Building America and this long-term monitoring effort. As a Building America test home, this home was evaluated to detail whole house energy use, end use loads, and the efficiency and operation of the ground source heat pump and associated systems. Given that the home includes many non-typical end use loads including a home office, pool, landscape water feature, and other luxury features not accounted for in Building America modeling tools, these end uses were separately monitored to determine their impact on overall energy consumption.

Not Available

2014-09-01T23:59:59.000Z

43

Community transportation : alternative transportation provision in a low-income neighborhoods in southeast Atlanta  

E-Print Network [OSTI]

Regional transit agencies are ineffective at meeting many of the basic transportation needs of a clustered "Study Area" of low-income Atlanta neighborhoods. For transit dependant residents in the Study Area, getting to the ...

Alexander, James W., 1977-

2004-01-01T23:59:59.000Z

44

E-Print Network 3.0 - atlanta georgia usa Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

georgia usa Search Powered by Explorit Topic List Advanced Search Sample search results for: atlanta georgia usa Page: << < 1 2 3 4 5 > >> 1 (virulence) CAI-1 System Summary: OF...

45

No evidence for acid-catalyzed secondary organic aerosol formation in power plant plumes over metropolitan Atlanta, Georgia - article no. L06801  

SciTech Connect (OSTI)

Aircraft-based measurements of the water-soluble fraction of fine PM organic carbon (WSOC) and inorganic salt composition in the Atlanta, GA region were conducted in the summer of 2004. Five notable plumes of SO{sub 2}, apparently from coal-fired power plants, were intercepted, and had NH{sub 4}{sup +}/SO4{sup 2-} molar ratios ranging from approximately 0.8 to 1.4 compared to molar ratios near 2 outside of the plumes. Sulfate aerosol concentrations increased from a regional background of 5 - 8 {mu} g m{sup -3} to as high as 19.5 {mu} g m{sup -3} within these plumes. No increase in WSOC concentrations was observed in plumes compared to out-of-plumes within a WSOC measurement uncertainty of 8%. These measurements suggest that secondary organic aerosol formation via heterogeneous acid-catalyzed reactions within power plant plumes are not likely a significant contributor to the ambient aerosol mass loading in Atlanta and the surrounding region. Because this region is rich in both biogenic and anthropogenic volatile organic carbon (VOC), the results may be widely applicable.

Peltier, R.E.; Sullivan, A.P.; Weber, R.J.; Wollny, A.G.; Holloway, J.S.; Brock, C.A.; de Gouw, J.A.; Atlas, E.L. [Georgia Institute for Technology, Atlanta, GA (United States). School for Earth and Atmospheric Science

2007-03-15T23:59:59.000Z

46

Atlanta Suburb Greases the Path to Savings with Biodiesel | Department of  

Broader source: Energy.gov (indexed) [DOE]

Atlanta Suburb Greases the Path to Savings with Biodiesel Atlanta Suburb Greases the Path to Savings with Biodiesel Atlanta Suburb Greases the Path to Savings with Biodiesel December 7, 2011 - 3:33pm Addthis Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Chris Galm Marketing & Communications Specialist, Office of Energy Efficiency & Renewable Energy What does this project do? Reduces fuel consumption Saves the city money Extends the lifespan of city owned service vehicles "We sat down and actually met with several people out of the biodiesel industry and found out how amazingly simple it was for us to do this. To

47

Atlanta Suburb Greases the Path to Savings with Biodiesel | Department of  

Broader source: Energy.gov (indexed) [DOE]

Atlanta Suburb Greases the Path to Savings with Biodiesel Atlanta Suburb Greases the Path to Savings with Biodiesel Atlanta Suburb Greases the Path to Savings with Biodiesel December 7, 2011 - 3:33pm Addthis Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Chris Galm Marketing & Communications Specialist, Office of Energy Efficiency & Renewable Energy What does this project do? Reduces fuel consumption Saves the city money Extends the lifespan of city owned service vehicles "We sat down and actually met with several people out of the biodiesel industry and found out how amazingly simple it was for us to do this. To

48

Microsoft PowerPoint - Clark Atlanta DOE MEI Small Business presentation August 2009 for pdf.ppt [Compatibility Mode]  

Broader source: Energy.gov (indexed) [DOE]

CLARK ATLANTA UNIVERSITY CLARK ATLANTA UNIVERSITY CLARK ATLANTA UNIVERSITY Presentation at the Presentation at the CLARK ATLANTA UNIVERSITY CLARK ATLANTA UNIVERSITY Presentation at the Presentation at the 10 10 th th Annual DOE MEI Small Business Conference Annual DOE MEI Small Business Conference CAU's Energy Related Research Capabilities CAU's Energy Related Research Capabilities 10 10 th th Annual DOE MEI Small Business Conference Annual DOE MEI Small Business Conference CAU's Energy Related Research Capabilities CAU's Energy Related Research Capabilities Ishrat M Khan Ph.D. Ishrat M Khan Ph.D. Ishrat M Khan Ph.D. Ishrat M Khan Ph.D. Director, Center for Functional Director, Center for Functional Nanoscale Nanoscale Materials Materials ikhan@cau.edu ikhan@cau.edu www cau edu/research www

49

Black and White Commuting Behavior in a Large Southern City: Evidence from Atlanta  

E-Print Network [OSTI]

Black and White Commuting Behavior in a Large Southern City: Evidence from Atlanta Clark, W. A. VV430X. William A. V. Clark Youqin Huang Black and White Commuting Behavior in a Large Southern City and white households are consistent with the overall hypothesis that households min- imize their commuting

Huang, Youqin

50

Synthesis and properties of green phosphor SrGa2S4:Eu2 emission displays by an environmentally clean technique  

E-Print Network [OSTI]

by an environmentally clean technique Y.D. Jianga , G. Villalobosa , J.C. Souriaua , H. Parisa , C.J. Summersa , Z.L. Wangb,* a Phosphor Technology Center of Excellence, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA b School of Materials Science and Engineering, Georgia

Wang, Zhong L.

51

Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia-- March 16-18, 2011  

Broader source: Energy.gov [DOE]

This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

52

A Dynamic GISMulticriteria Technique for Siting the NASAClark Atlanta Urban Rain Gauge Network  

Science Journals Connector (OSTI)

Because Atlanta, Georgia, is a model of rapid transition from forest/agriculture land use to urbanization, NASA and other agencies have initiated programs to identify and understand how urban heat islands (UHIs) impact the environment in terms of ...

J. Marshall Shepherd; Olayiwola O. Taylor; Carlos Garza

2004-09-01T23:59:59.000Z

53

STATEMENT OF CONSIDERATIONS REQUEST BY ATLANTA GAS LIGHT AND ADSORBENT RESEARCH  

Broader source: Energy.gov (indexed) [DOE]

AUub. -5'94(THU) 14:09 DO PLD-CHICAGO TEL:1 70 252 2779 P, 004 AUub. -5'94(THU) 14:09 DO PLD-CHICAGO TEL:1 70 252 2779 P, 004 STATEMENT OF CONSIDERATIONS REQUEST BY ATLANTA GAS LIGHT AND ADSORBENT RESEARCH GROUP (AGLARG) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER SUBCONTRACT NO. 466590 AT BROOKHAVEN NATIONAL LABORATORY; W(A) -9421, CH-0839 The Atlanta Gac Light and Adsorbent Rcscarch Group (AGLARG), a large business coneortium, hao petitioned for an advance waiver of patent rights under its Subcontract No. 466590 from Brookhaven National Laboratory, operated by Associated Univeraitico, Inc. under DOE Contract No. DE-AC02-76CH00016. The purpooc of this subcontract includes the design, fabrication, testing and demonstration of a fuel storage and fuel delivery system for at least two natural gas powered engines in light duty vehicles

54

Capacitance hysteresis in GaN/AlGaN heterostructures L. E. Byrum,1  

E-Print Network [OSTI]

Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA 2 NDP Optronics

Matsik, Steven G.

55

GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges  

E-Print Network [OSTI]

, Georgia State University, Atlanta, Georgia 30303 S. G. Matsik NDP Optronics LLC, Mableton, Georgia 30126 A

Perera, A. G. Unil

56

Presented at the ASHRAE Winter Meeting, Atlanta, GA, February 1721, 1996, and to be published in the Proceedings  

E-Print Network [OSTI]

, and to be published in the Proceedings A Comparison Between Calculated and Measured SHGC for Complex Fenestration Calculated and Measured SHGC for Complex Fenestration Systems J. H. Klems, J. L. Warner, and G. O. Kelley;A Comparison Between Calculated and Measured SHGC for Complex Fenestration Systems J. H. Klems, J. L

57

Thermal comfort in naturally-ventilated and air-conditioned classrooms in the tropics.  

E-Print Network [OSTI]

in kindergartens. IAQ '91 Healthy Buildings, Atlanta, GA,kindergartens. in IAQ '91 Healthy Buildings. 1991. Atlanta,in kindergartens. IAQ '91 Healthy Buildings, Atlanta, GA,

Kwok, Alison G

1997-01-01T23:59:59.000Z

58

COOPERATIVE AND NON-COOPERATIVE DECISION BEHAVIORS IN RESPONSE TO THE INSPECTION AND MAINTENANCE PROGRAM IN THE ATLANTA  

E-Print Network [OSTI]

COOPERATIVE AND NON-COOPERATIVE DECISION BEHAVIORS IN RESPONSE TO THE INSPECTION AND MAINTENANCE BEHAVIORS IN RESPONSE TO THE INSPECTION AND MAINTENANCE PROGRAM IN THE ATLANTA AIRSHED, 1997-2001 Bryan G not have been able to cover the immense research landscape that is presented in this dissertation. Bryan

Vermont, University of

59

Elsevier, Journal of Transport Geography, volume 24, 2012 Atlanta: A Mega Logistics Center in the Piedmont Atlantic Megaregion (PAM)  

E-Print Network [OSTI]

1 Elsevier, Journal of Transport Geography, volume 24, 2012 Atlanta: A Mega Logistics Center.ross@coa.gatech.edu Abstract This paper looks at spatial patterns of freight and logistics activities and the planning and policy issues associated with them. Two important characteristics of the geography of the logistics

Paris-Sud XI, Université de

60

Microsoft PowerPoint - 9-05 Lutze LUTZE - Atlanta Nov 2010.ppt  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

DuraLith Geopolymer Low DuraLith Geopolymer Low Temperature Waste Forms Werner Lutze, Weiliang Gong, and Ian L. Pegg Vitreous State Laboratory The Catholic University of America Washington, DC EM Waste Processing Technical Exchange Atlanta , , Nov. 16 - 18, 2010 Print Close 2 DuraLith Geopolymer Low Temperature Waste Forms A Geopolymer is .... .... an inorganic solid formed by poly-condensation: NaOH n{-O-Si-OH + HO-Al-O-}  {-O-Si-O-Al-O-} n + nH 2 O General formula: (Na,K) n [(SiO 2 ) z -AlO 2 ] n ·wH 2 O 'w' << 1 1≤ z ≤ 3 Print Close 3 DuraLith Geopolymer Low Temperature Waste Forms Geopolymers ....  ... can be made at room temperature from any reactive aluminosilicate with alkali hydroxide or alkali polysilicates  ... contain very little water after complete hardening  ... are resistant to acids

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors  

E-Print Network [OSTI]

, Georgia State University, Atlanta, Georgia 30303, USA; bNDP Optronics LLC, Mableton, Georgia 30126, USA; c

Dietz, Nikolaus

62

Density functional theory based calculations of the vibrational properties of chlorophyll-a  

E-Print Network [OSTI]

-a plays a fundamental role in the solar energy conversion processes that occur in oxygen evolving University, 29 Peachtree Center Avenue, Atlanta, GA 30303, United States Received 29 November 2006; received

Hastings, Gary

63

Urban airshed modeling of air quality impacts of alternative transportation fuel use in Los Angeles and Atlanta  

SciTech Connect (OSTI)

The main objective of NREL in supporting this study is to determine the relative air quality impact of the use of compressed natural gas (CNG) as an alternative transportation fuel when compared to low Reid vapor pressure (RVP) gasoline and reformulated gasoline (RFG). A table lists the criteria, air toxic, and greenhouse gas pollutants for which emissions were estimated for the alternative fuel scenarios. Air quality impacts were then estimated by performing photochemical modeling of the alternative fuel scenarios using the Urban Airshed Model Version 6.21 and the Carbon Bond Mechanism Version IV (CBM-IV) (Geary et al., 1988) Using this model, the authors examined the formation and transport of ozone under alternative fuel strategies for motor vehicle transportation sources for the year 2007. Photochemical modeling was performed for modeling domains in Los Angeles, California, and Atlanta, Georgia.

NONE

1997-12-01T23:59:59.000Z

64

Timothy J. Bartness Departments of Biology and Center for Behavioral Neuroscience, Georgia State University, Atlanta, GA 30303. Gregory E. Demas Department of Biology and Program in Neural  

E-Print Network [OSTI]

University, Bloomington, IN 47405. Neurobiology of Food and Fluid Intake, 2nd Ed., Volume 14 of Handbook, and from humans, many or most of the fundamental problems in ingestive behavior 423 #12;have not been shaped by evolu- tionary forces, we might gain greater insight into the functional and adaptive signif

Demas, Greg

65

Toughening and asymmetry in peeling of heterogeneous adhesives Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0405, USA  

E-Print Network [OSTI]

at the macroscale. Our study reveals three elementary mechanisms in heterogeneous systems involving front force resulting in dramatically en- hanced resistance to peeling; (ii) optimized arrangements of pinning sites with large adhesion energy are shown to control the effective system resistance, allowing

66

ChemKey Search Database. Heterodata, Inc. 1055 Rosewood Drive, Atlanta, GA 30306. http://euch6f.chem.emory.edu/index.html. $325.00.  

Science Journals Connector (OSTI)

The database relies on text searching only; there is no provision for structural searches. ... Entering a fragment of a search term is sufficient:? for example, ion rapidly finds all citations containing words beginning with those three characters, such as ion, ionic, ionization, etc. Entering =ion finds only ion, whereas entry of *ion finds words that contain those characters at any position, including anion and cation. ... The speed of searches is impressive:? with the exception of internal string searches (using *), which may take 30 s or so, all other searches provide results within a second or two, even with multiple search terms. ...

William H. Pearson

2007-06-02T23:59:59.000Z

67

Lattice-Mismatched GaInP LED Devices and Methods of Fabricating...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Stories News Events Find More Like This Return to Search Lattice-Mismatched GaInP LED Devices and Methods of Fabricating Same United States Patent Application Publication...

68

Impact of Fixed Exterior Shading on Daylighting: A Case Study of the David Brower Center  

E-Print Network [OSTI]

ASHRAE: Atlanta, GA. 4. Autodesk (2011). Ecotect Analysisbuilding design software (Autodesk, 2011). 34 Model geometry

Zelenay, Krystyna

2011-01-01T23:59:59.000Z

69

API unit  

Science Journals Connector (OSTI)

API unit [An arbitrary unit of the American Petroleum Institute for measuring natural radioactivity; used in certain well logging methods] ? API-Einheit f

2014-08-01T23:59:59.000Z

70

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

71

Ab initio density functional theory study of non-polar (101{sup }0),?(112{sup }0) and semipolar (202{sup }1) GaN surfaces  

SciTech Connect (OSTI)

The atomic structures of non-polar GaN(101{sup }0),?(112{sup }0) and semipolar GaN(202{sup }1),?(202{sup }1{sup }) surfaces were studied using ab initio calculations within density functional theory. The bulk-like truncated (1??1) structure with buckled Ga-N or Ga-Ga dimers was found stable on the non-polar GaN(101{sup }0) surface in agreement with previous works. Ga-N heterodimers were found energetically stable on the GaN(112{sup }0)-(1??1) surface. The formation of vacancies and substitution site defects was found unfavorable for non-polar GaN surfaces. Semipolar GaN(202{sup }1)-(1??1) surface unit cells consist of non-polar (101{sup }0) and semipolar (101{sup }1) nano-facets. The (101{sup }1) nano-facets consist of two-fold coordinated atoms, which form N-N dimers within a (2??1) surface unit cell on a GaN(202{sup }1) surface. Dimers are not formed on the GaN(202{sup }1{sup }) surface. The stability of the surfaces with single (101{sup }0) or (101{sup }1) nano-facets was analyzed. A single non-polar (101{sup }0)-(1??1) nano-facet was found stable on the GaN(202{sup }1) surface, but unstable on the GaN(202{sup }1{sup }) surface. A single (101{sup }1) nano-facet was found unstable. Semipolar GaN surfaces with (202{sup }1) and (202{sup }1{sup }) polarity can be stabilized with a Ga overlayer at Ga-rich experimental conditions.

Mutombo, P.; Romanyuk, O., E-mail: romanyuk@fzu.cz [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnick 10, 16200 Prague (Czech Republic)

2014-05-28T23:59:59.000Z

72

Meeting Briefs from Atlanta  

Science Journals Connector (OSTI)

"Certain organic materials have the undesirable property of increasing the dissolution of plutonium in groundwaters and potentially enhancing its transport away from a disposal site," says U.S. Geological Survey chemist Jess M. Cleveland. ... Cleveland and associates examined the groundwater near three plutonium disposal sites to find what chemical form the element was taking and what its chemical and hydrologie behaviors were under various environmental conditions. ... At Maxey Flats in Kentucky, for instance, where these organic agents are present, the researchers found water samples with as much as 300,000 picocuries (10 -12 curie) of plutonium per liter. ...

1981-04-13T23:59:59.000Z

73

GaN High Power Devices  

SciTech Connect (OSTI)

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

74

SciTech Connect: enriched uranium  

Office of Scientific and Technical Information (OSTI)

enriched uranium Find enriched uranium Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

75

SciTech Connect: auroras  

Office of Scientific and Technical Information (OSTI)

auroras Find auroras Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

76

SciTech Connect: "plasma science"  

Office of Scientific and Technical Information (OSTI)

plasma science" Find plasma science" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

77

SciTech Connect: "Greenhouse Effect"  

Office of Scientific and Technical Information (OSTI)

Greenhouse Effect" Find Greenhouse Effect" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

78

SciTech Connect: higgs  

Office of Scientific and Technical Information (OSTI)

higgs Find higgs Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

79

SciTech Connect: "fuel cells"  

Office of Scientific and Technical Information (OSTI)

fuel cells" Find fuel cells" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

80

SciTech Connect: plasma  

Office of Scientific and Technical Information (OSTI)

plasma Find plasma Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

SciTech Connect: "enriched uranium"  

Office of Scientific and Technical Information (OSTI)

enriched uranium" Find enriched uranium" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

82

SciTech Connect: "oil shale"  

Office of Scientific and Technical Information (OSTI)

oil shale" Find oil shale" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

83

SciTech Connect: "higgs boson"  

Office of Scientific and Technical Information (OSTI)

higgs boson" Find higgs boson" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

84

SciTech Connect: "geomagnetic storms"  

Office of Scientific and Technical Information (OSTI)

geomagnetic storms" Find geomagnetic storms" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

85

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

86

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name: GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and...

87

Spectral research on an AlGaAs epitaxial material for a terahertz quantum-cascade laser  

Science Journals Connector (OSTI)

The spectral properties of a series of AlGaAs epitaxial films were studied by using a Fourier transform infrared spectrometer with an 80-degree grazing incidence reflection unit. The AlAs-like transversal optical...

Zhi-Yong Tan; Jun-Cheng Cao

2012-04-01T23:59:59.000Z

88

UNIT NUMBER:  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

193 UNIT NUMBER: 197 UNIT NAME: CONCRETE RUBBLE PILE (30) REGULATORY STATUS: AOC LOCATION: Outside plant security fence, north of the plant on Big Bayou Creek on private property....

89

UNIT NUMBER  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

7 UNIT NUMBER UNIT NAME Rubble oile 41 REGULATORY STATUS: AOC LOCATION: Butler Lake Dam, West end of Butler Lake top 20 ft wide, 10 ft APPROXIMATE DIMENSIONS: 200 ft long, base 30...

90

GaN/AlGaN ultraviolet/infrared dual-band detector G. Ariyawansa, M. B. M. Rinzan, M. Alevli, M. Strassburg, N. Dietz, and A. G. U. Pereraa  

E-Print Network [OSTI]

, Atlanta, Georgia 30303 S. G. Matsik NDP Optronics, Mableton, Georgia 30126 A. Asghar and I. T. Ferguson

Perera, A. G. Unil

91

Ga[sub 13], Al[sub 13], GaAl[sub 12], and chromium-pillared montmorillonites: Acidity and reactivity for cumene conversion  

SciTech Connect (OSTI)

A comparison has been made of the acidic characters of a series of metal polyoxocation pillar interlayered clay minerals (M-PILCs) by studying the infrared spectra of adsorbed pyridine. These comparisons were made for Ga[sub 13]-, Al[sub 13]- and GaAl[sub 12]-PILCs, and for Na[sup +]-exchanged montmorillonite (Na-STx-1). The Ga[sub 13]-PILC, was found to exhibit the strongest Lewis acid sites, followed by the AL[sub 13]-, and GaAl[sub 12]-PILCs and then by the Ns-STx-1. The relative number of Lewis acid sites, however, was found to be much greater for the GaAl[sub 12]-PILC, particularly after calcination at higher temperatures, indicating that the Ga[sub 13] Lewis acid sites did not have as high a thermal stability. The Broensted acidic characters for the pillared clays depend on the pillar, and follow the general decreasing order of abundance of GaAl[sub 12]-, Al[sub 13], and Ga[sub 13]-PILC when expressed as absorbance per unit mass. When the acidities per unit surface area were estimated, however, the Ga[sub 13]-PILCs were found to have the greatest number. This indicated that while the pillars contribute to the PILC acidities primarily through increasing the exposed phyllosilicate sheet surface areas, there is also a significant effect arising from the acidic characters of the pillars themselves. The dehydrogenation activities of Ga[sub 13]-, GaAl[sub 12]-, Al[sub 13]-, and Na-STx-1, in addition to a chromium polyoxocation-PILC, were compared by observing the products formed upon reaction with the model compound cumene. The Ga[sub 13]- and chromium-PILCs and the Na-Stx-1 exhibited almost exclusively dehydrogenation activities, whereas the Al[sub 13]- and GaAl[sub 12]-PILCs exhibited both cracking and dehydrogenation behaviors. These results prove that the pillars themselves can very strongly effect the catalytic activities of the PILCs. 3 refs., 6 figs., 2 tabs.

Bradley, S.M.; Kydd, R.A. (Univ. of Calgary, Alberta (Canada))

1993-05-01T23:59:59.000Z

92

Building America Technology Solutions for New and Existing Homes...  

Energy Savers [EERE]

Atlanta, Georigia (Fact Sheet), This case study describes the construction of a new test home in Atlanta, GA, that demonstrates current best practices for the mixed-humid...

93

RECYCLING: SUPPLY, ECONOMICS, ENVIRONMENT, AND TECHNOLOGY  

E-Print Network [OSTI]

Proceedings Technology Park/Atlanta P. O. Box 105113 Atlanta, GA 303+8-5113, USA on recycled paper 416 / TAPPI

Abubakr, Said

94

A Seeded Memetic Algorithm for Large Unit Commitment Problems  

Science Journals Connector (OSTI)

The paper shows that the use of a memetic algorithm (MA), a genetic algorithm (GA) combined with local search, synergistically combined with Lagrangian relaxation is effective and efficient for solving large unit commitment problems in electric power ... Keywords: Lagrangian relaxation, electrical power generation, genetic algorithm, memetic algorithm, unit commitment

Jorge Valenzuela; Alice E. Smith

2002-03-01T23:59:59.000Z

95

Beta decay of Ga-62  

E-Print Network [OSTI]

We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

96

UNIT NUMBER  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

174 10 12 92 UNIT NAME: C-745-K Low Level Storage Area REGULATORY STAU: -AOC LOCATION: Inside Security Fence , South of C-333 Cascade Building. APPROXIMATE...

97

UNIT NUMBER  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

4 UNIT NAME C-611 Underaround Diesel Tank REGULATORY STATUS: AOC LOCATION: Immediately southeast of C-611 APPROXIMATE DIMENSIONS: 1000 gallon FUNCTION: Diesel storage OPERATIONAL...

98

UNIT NUMBER:  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

7 KOW Toluene SDill Area UNIT NAME: REGULATORY STATUS: AOC LOCATION: Southwest of plant site APPROXIMATE DIMENSIONS: 200 feet wide by 800 feet ong FUNCTION: Storage of Toluene...

99

UNIT NUMBER  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

9 UNIT NAME C-746-Al REGULATORY STATUS: AOC LOCATION: Northwest corner of C-746-A APPROXIMATE DIMENSIONS: 4000 gallons FUNCTION: Underground storage tanks OPERATIONAL STATUS:...

100

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study  

SciTech Connect (OSTI)

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

2010-10-14T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

RECIPIENT:Gwinnett Co, GA  

Broader source: Energy.gov (indexed) [DOE]

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

102

Novel GaAs Devices  

Science Journals Connector (OSTI)

As the dimensions of GaAs devices shrink, the effective electron velocity should increase, leading to a shorter transit time and to a ballistic or near-ballistic mode of operation (see Chapter 2). At the same ...

Michael Shur

1987-01-01T23:59:59.000Z

103

Structural ordering and interface morphology in symmetrically strained(GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)  

Science Journals Connector (OSTI)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest ?110? directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation. A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

C. Giannini; L. Tapfer; Y. Zhuang; L. De Caro; T. Marschner; W. Stolz

1997-02-15T23:59:59.000Z

104

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

105

United States  

Office of Legacy Management (LM)

- I - I United States Department of Energy D lSCk Al M E R "This book was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise, does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency

106

UNIT NUMBER  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

5 UNIT NAME C-333 North Side PCB Soil Contamination REGULATORY STATUS: AOC LOCATION: North side of C-333 Building APPROXIMATE OIMENSIONS: 150 ft by 100 ft FUNCTION: Dust Palliative...

107

UNIT NUMBER:  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

4 KPDES Outfall Ditch 017 Flume- Soil Backfill UNIT NAME: - REGULATORY STATUS: AOC LOCATION: South of plant on the west side of the access road APPROXIMATE DIMENSIONS: 30 feet wide...

108

UNIT NUMBER:  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2 C-617-A Sanitarv Waterline- Soil Backfill UNIT NAME: - REGULATORY STATUS: AOC LOCATION: Between southeast corner of C-531 Switchyard and C-617-A Water Treatment Facility. 4 feet...

109

UNIT NUMBER  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

1 UNIT NAME C-720 Inactive TCE Oegreaser REGULATORY STATUS: AOC LOCATION: C-720 Building APPROXIMATE DIMENSIONS: Approx. 10 ft by 10 ft by 20 f1: deep FUNCTION: Used for cleaning...

110

UNIT NUMBER  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2 UNIT NAME Rubble Dile 46 REGULATORY STATUS: AOC LOCATION: 2000 ft southwest of curve on Kentucky Highway 473- near east end of Mitchell Lake APPROXIMATE DIMENSIONS: About 100 ft...

111

UNIT NUMBER  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

1 UNIT NAME Rubble oile 45 REGULATORY STATUS AOC LOCATION: West end of Mitche Lake APPROXIMATE DIMENSIONS: 2000 ft long, ft thick 4 ft wide FUNCTION: Control erosion on face of dam...

112

UNIT NUMBER  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

9 UNIT NAME Rubble Dile 43 REGULATORY STATUS: AOC LOCATION: West end of Happy Ho ow Lake APPROXIMATE DIMENSIONS: 200 ft long by 4 ft wide -concrete 4-6 in thickness FUNCTION:...

113

UNIT NUMBER  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

6 UNIT NAME C-740 TCE Soill Site REGULATORY STATUS: AOC LOCATION: Northwest corner C-740 concrete pad area) APPROXIMATE DIMENSIONS: 5 ft by 5 ft spill FUNCTION: Drum storage area...

114

UNIT NUMBER  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

8 C-I00 South Side Berms UNIT NAME REGULATORY STATUS: AOC LOCATION: South Side C-IOO APPROXIMATE DIMENSIONS: 2 berms approximately 200 ft long by SO ft wide eac FUNCTION:...

115

UNIT NUMBER:  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

3 UNIT NAME: C-331 PCB Soil Contamination -West Side REGULATORY STATUS: AOC LOCATION: West side C-331 building APPROXIMATE DIMENSIONS: 100 feet wide by 420 feet long FUNCTION: Dust...

116

UNIT NUMBER  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

3 C-750B Diesel UST UNIT NAME REGULATORY STATUS: AOC LOCATION: Southeast corner of C-750 APPROXIMATE DIMENSIONS: 10,000 gallon FUNCTION: Diesel storage OPERATIONAL STATUS: Removed...

117

UNIT NUMBER  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

5 UNIT NAME C-633 PCB So111 Site REGULATORY STATUS CERCLA LOCATION C-633 Transformer area (Mac location 75) APPROXIMATE DIMENSIONS I Unknown FUNCTION Soill site OPERATIONAL STATUS...

118

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

119

3/5/09 11:36 AMTech composes the music of fish | ajc.com Page 1 of 3http://www.ajc.com/metro/content/metro/atlanta/stories/2009/02/22/tech_music_fish.html  

E-Print Network [OSTI]

3/5/09 11:36 AMTech composes the music of fish | ajc.com Page 1 of 3http://www.ajc.com/metro/content/metro/atlanta/stories/2009/02/22/tech_music_fish.html Enlarge this image CURTIS COMPTON / ccompton@ajc.com Dr. Bruce Walker (right), project lead, and researcher Carrie Bruce watch fish during work on a Center for Music

120

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

High Efficiency Large Area AlGaAs/GaAs Concentrator Solar Cells  

Science Journals Connector (OSTI)

A 1-kWp ( peak at 100 mw/cm2 incident power dencity ) concentrating photovoltaic array with 180 square Presnel plastic lenses and AlGaAs/GaAs concentrator solar cells has been constructed. The AlGaAs/GaAs concetr...

S. Yoshida; K. Mitsui; T. Oda; Y. Yukimoto

1981-01-01T23:59:59.000Z

122

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response  

E-Print Network [OSTI]

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 27 infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

Jalali. Bahram

123

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network [OSTI]

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

124

United States  

Office of Legacy Management (LM)

Office of Research and EPA 600/R-941209 Environmental Protection Development January 1993 Agency Washington, DC 20460 Offsite Environmental 57,,7 Monitoring Report Radiation Monitoring Around United States Nuclear Test Areas, Calendar Year 1992 UNITED STATES ENVIRONMENTAL PROTECTION AGENCY OFFICE OF RESEARCH AND DEVELOPMENT ENVIRONMENTAL MONITORING SYSTEMS LABORATORY-LAS VEGAS P.O. BOX 93478 LAS VEGAS. NEVADA 891 93-3478 702/798-2100 Dear Reader: Since 1954, the U.S. Environmental Protection Agency (EPA) and its predecessor the U.S, Public Health Service (PHs) has conducted radiological monitoring in the offsite areas around United States nuclear test areas. The primary objective of this monitoring has been the protection of the health and safety of

125

United States  

Broader source: Energy.gov (indexed) [DOE]

BP Energy Company BP Energy Company OE Docket No. EA- 3 14 Order Authorizing Electricity Exports to Mexico Order No. EA-3 14 February 22,2007 BP Energy Company Order No. EA-314 I. BACKGROUND Exports of electricity from the United States to a foreign country are regulated by the Department of Energy (DOE) pursuant to sections 301(b) and 402(Q of the Department of Energy Organization Act (42 U.S.C. 7 15 l(b), 7172(f)) and require authorization under section 202(e) of the Federal Power Act (FPA) (16 U.S.C.S24a(e)) . On May 22,2006, BP Energy Company (BP Energy) applied to DOE for an authorization to transmit electric energy from the United States to Mexico as a power marketer. BP Energy proposes to purchase surplus electric energy from electric utilities and other suppliers within the United States and to export that energy to ~Mexico. The cnergy

126

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

127

GaAsbased quantum cascade lasers  

Science Journals Connector (OSTI)

...N. Murdin GaAs-based quantum cascade lasers Sirtori H. Page C. Becker...state-of-the-art of GaAs-based quantum cascade lasers. These new light sources...2000.0739 GaAs-based quantum cascade lasers By C. Sirtori, H. Page...

2001-01-01T23:59:59.000Z

128

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

129

Electric power production using new GaSb photovoltaic cells with extended infrared response  

Science Journals Connector (OSTI)

New GaSb photovoltaic cells with infrared response extended out to 1.8 microns are well matched to hydrocarbon combustion heated silicon carbide infrared emitters operating at 1600 C. Power densities of up to 10 Watts/cm2 promise to make thermophotovoltaic generation of electricity economical. These continuous combustion thermophotovoltaic units run quietly and cleanly. Applications include small scale distributed cogeneration of heat and electricity and power units for clean electric vehicles.

Lewis Fraas; Russell Ballantyne; John Samaras; Michael Seal

1995-01-01T23:59:59.000Z

130

United States  

Office of Legacy Management (LM)

WASHINGTON, TUESDAY, JUNE 28, 1983 @nngmeional Ruord United States of America .__ -- . . ,- PROCEEDINGS AND DEBATES OF THE 9@ CONGRESS, FIRST SESSION United States Government Printing Office SUPERINTENDENT OF DOCUMENTS Washmgton, D C 20402 OFFICIAL BUSINESS Penalty Ior pwate use. $xX Congresstonal Record (USPS 087-390) Postage and Fees Pad U S Government Prlnhng 0ffv.X 375 SECOND CLASS NEWSPAPER H.4578 ' C.QNGRESSIONAL RECORD - HOUSE June 28, 1983 H.J. Res. 273: Mr. BOUND. Mr. W~.XMAN. Mr. OBERSTAR, Mr. BEDELL. Mr. BONER of Tennessee, Mr. OWENS. Mr. DAUB, Mr. CONTE. Mr. RAHALL; Mr. GRAY, Mr. VANDER JACT. Mr. TRAKLER, and Mr. Vxrrro. H. Con. Res. 107: Mr. KASICH. Mr. AUCOIN. Mr. CARPER, and Mr. SIZHFIJER. H. Con. Res. 118: Mr. FISH. Mr. LANTOS.

131

United States  

Office of Legacy Management (LM)

ongrees;ional Record ongrees;ional Record United States of America __._ -.. I. :- PROCEEDINGS AND DEBATES OF THE 9tth CONGRESS, FIRST SESSION United States Government Printing Office SUPERINTENDENT OF DOCUMENTS Washmcqton. Cl C 20402 OFFICIAL BUSINESS Penalty Ior pwate use. $300 Congressmal Record (USPS 087-390) Postage and Fees Pad U S Governme3n:jPnntmg OfIce SECOND CLASS NEWSPAPER H.4578 ' June 28, 1983 -: I H.J. Res. 273: Mr. BOLAND, Mr. WA-. Mr. OBERSTAFC, M' r. BEDELL, Mr. BONER of Tennessee, Mr. OWENS. Mr. DAUB. Mr. CONTE. Mr. RAHALL,. Mr. GRAY, Mr. VANDER JAGT. Mr. TRAKLER. and Mr. VENTO. H. Con. Res. iO7: Mr. KASICH. Mr. ALCOIN. Mr. CARPER. and Mr. SCHEUER. H. Con. Res. 118: Mr. FISH, Mr. LANTOS. Mr. KILDEE. Mr. SOLARZ Mr. Bmrr, Mr. BELWLL, Mr. RANG~L, Mr. DYMALLY. Mr.

132

United States  

Broader source: Energy.gov (indexed) [DOE]

E-T Global Energy, LLC E-T Global Energy, LLC OE Docket No. EA-381 Order Authorizing Electricity Exports to Mexico Order No. EA-381 June 10, 2011 I. BACKGROUND E-T Global Energy, LLC Order No. EA-381 Exports of electricity from the United States to a foreign country are regulated by the Department of Energy (DOE) pursuant to sections 301(b) and 402(f) of the Department ofEnergy Organization Act (42 U.S.C. 7151(b), 7172(f)) and require authorization under section 202(e) ofthe Federal Power Act (FPA) (16 U.S.C.824a(e)) 1 * On May 10,2011, DOE received an application from E-T Global Energy, LLC (E-T Global) for authority to transmit electric energy from the United States to Mexico for five years as a power marketer using existing international transmission facilities. E-

133

Coulomb excitation of 73Ga  

E-Print Network [OSTI]

The B(E2; Ii -> If) values for transitions in 71Ga and 73Ga were deduced from a Coulomb excitation experiment at the safe energy of 2.95 MeV/nucleon using post-accelerated beams of 71,73Ga at the REX-ISOLDE on-line isotope mass separator facility. The emitted gamma rays were detected by the MINIBALL-detector array and B(E2; Ii->If) values were obtained from the yields normalized to the known strength of the 2+ -> 0+ transition in the 120Sn target. The comparison of these new results with the data of less neutron-rich gallium isotopes shows a shift of the E2 collectivity towards lower excitation energy when adding neutrons beyond N = 40. This supports conclusions from previous studies of the gallium isotopes which indicated a structural change in this isotopical chain between N = 40 and N = 42. Combined with recent measurements from collinear laser spectroscopy showing a 1/2- spin and parity for the ground state, the extracted results revealed evidence for a 1/2-; 3/2- doublet near the ground state in 73 31Ga42 differing by at most 0.8 keV in energy.

J. Diriken; I. Stefanescu; D. Balabanski; N. Blasi; A. Blazhev; N. Bree; J. Cederkll; T. E. Cocolios; T. Davinson; J. Eberth; A. Ekstrm; D. V. Fedorov; V. N. Fedosseev; L. M. Fraile; S. Franchoo; G. Georgiev; K. Gladnishki; M. Huyse; O. V. Ivanov; V. S. Ivanov; J. Iwanicki; J. Jolie; T. Konstantinopoulos; Th. Krll; R. Krcken; U. Kster; A. Lagoyannis; G. Lo Bianco; P. Maierbeck; B. A. Marsh; P. Napiorkowski; N. Patronis; D. Pauwels; P. Reiter; M. Seliverstov; G. Sletten; J. Van de Walle; P. Van Duppen; D. Voulot; W. B. Walters; N. Warr; F. Wenander; K. Wrzosek

2010-10-13T23:59:59.000Z

134

Theoretical investigation of spin-filtering in CrAs/GaAs heterostructures  

SciTech Connect (OSTI)

The electronic structure of bulk zinc-blende GaAs, zinc-blende and tetragonal CrAs, and CrAs/GaAs supercells, computed within linear muffin-tin orbital (LMTO) local spin-density functional theory, is used to extract the band alignment for the [1,0,0] GaAs/CrAs interface in dependence of the spin orientation. With the lateral lattice constant fixed to the experimental bulk GaAs value, a local energy minimum is found for a tetragonal CrAs unit cell with a longitudinal ([1,0,0]) lattice constant reduced by ?2%. Due to the identified spin-dependent band alignment, half-metallicity of CrAs no longer is a key requirement for spin-filtering. Based on these findings, we study the spin-dependent tunneling current in [1,0,0] GaAs/CrAs/GaAs heterostructures within the non-equilibrium Green's function approach for an effective tight-binding Hamiltonian derived from the LMTO electronic structure. Results indicate that these heterostructures are promising candidates for efficient room-temperature all-semiconductor spin-filtering devices.

Stickler, B. A.; Ertler, C.; Ptz, W., E-mail: walter.poetz@uni-graz.at [Institute of Physics, Karl-Franzens Universitt Graz, Graz (Austria); Chioncel, L. [Institute of Physics, Theoretical Physics III, Center for Electronic Correlations and Magnetism, University of Augsburg, D-86135 Augsburg (Germany)

2013-12-14T23:59:59.000Z

135

Charakterisierung und Prparation von GaN und Herstellung von In-Plane-Gate Transistoren in AlxGa1-xN/GaN Heterostrukturen.  

E-Print Network [OSTI]

??Gegenstand der Arbeit sind GaN-Volumenmaterial und AlxGa1-xN/GaN HEMTs (high electron mobility transistor), welche ein zweidimensionales Elektronengas (2DEG) besitzen. Die Materialien wurden durch elektrische Messungen, insbesondere (more)

Ebbers, Andr

2003-01-01T23:59:59.000Z

136

X-ray diffraction study of (TlInSe{sub 2}){sub 1-x}(TlGaTe{sub 2}){sub x} crystal system  

SciTech Connect (OSTI)

The crystallographic and dynamic characteristics of TlInSe{sub 2} and TlGaTe{sub 2} crystals have been studied by X-ray diffraction in the temperature range of 85-320 K. The temperature dependences of the unit-cell parameters a of TlInSe{sub 2} and TlGaTe{sub 2} crystals, as well as their coefficients of thermal expansion along the [100] direction, are determined. The concentration dependences of the unit-cell parameters a and c for (TlInSe{sub 2}){sub 1-x}(TlGaTe{sub 2}){sub x} crystals are measured. Anomalies are found in the temperature dependences of the unit-cell parameters a and, correspondingly, the coefficient of thermal expansion, indicating the existence of phase transitions in TlInSe{sub 2} and TlGaTe{sub 2} crystals.

Sheleg, A. U., E-mail: sheleg@ifttp.bas-net.by; Zub, E. M.; Yachkovskii, A. Ya. [National Academy of Sciences of Belarus, State Scientific and Production Association, Scientific and Practical Materials Research Center (Belarus); Mustafaeva, S. N.; Kerimova, E. M. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan)

2012-03-15T23:59:59.000Z

137

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect (OSTI)

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

138

United States  

Broader source: Energy.gov (indexed) [DOE]

5 5 United States Department of Energy Southeastern Power Administration Wholesale Power Rate Schedule CC-1-I Availability: This rate schedule shall be available to public bodies and cooperatives served through the facilities of Carolina Power & Light Company, Western Division (hereinafter called the Customers). Applicability: This rate schedule shall be applicable to electric capacity and energy available from the Dale Hollow, Center Hill, Wolf Creek, Cheatham, Old Hickory, Barkley, J. Percy Priest, and Cordell Hull Projects (all of such projects being hereinafter called collectively the "Cumberland Projects") and sold in wholesale quantities. Character of Service: The electric capacity and energy supplied hereunder will be three-phase alternating

139

Low-temperature magnetization of (Ga,Mn) As semiconductors  

E-Print Network [OSTI]

der Laan,8 C. T. Foxon,2 and B. L. Gallagher2 1Institute of Physics ASCR, Cukrovarnick? 10, 162 53 Praha 6, Czech Republic 2School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom 3Institute of Physics ASCR, Na... is organized as follows. In Sec. II we identify the key physical considerations related to ground-state mag- netization of #1;Ga,Mn#2;As ferromagnets by focusing first on a single Mn#1;d5+hole#2; complex and approximating the total magnetization...

Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

2006-01-01T23:59:59.000Z

140

Theory of weak localization in ferromagnetic (Ga,Mn)As  

E-Print Network [OSTI]

&M University, College Station, Texas 77843-4242, USA 3Institute of Physics, ASCR, v.v.i., Cukrovarnicka 10, 162 53 Praha 6, Czech Republic 4School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom #1;Received 27 November.... Unlike earlier theoretical work15,16 which ad- dressed quantum interference in ferromagnets, we focus our study on a four-band model which is directly relevant to the valence bands of #1;Ga,Mn#2;As. We demonstrate that the quan- tum interference...

Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Quantification of the Heterogeneity in Breast Cancer Cell Lines Using Whole-Cell Impedance Spectroscopy  

Science Journals Connector (OSTI)

...School of Electrical and Computer Engineering, Georgia...Department of Electrical and Computer Engineering, Texas...Atlanta, GA; and 3 School of Electrical and Computer Engineering, Georgia...Technology, Atlanta, GA Grant support: NIH/National...

Arum Han; Lily Yang; and A. Bruno Frazier

2007-01-01T23:59:59.000Z

142

Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys  

Science Journals Connector (OSTI)

Using large (512-atom) pseudopotential supercell calculations, we have investigated the composition dependence of the momentum matrix element Mv,c for transitions between the valence-band maximum and the conduction-band minimum of three semiconductor alloys:?GaP1-xNx and GaAs1-xNx, exhibiting large chemical and size differences between their alloyed elements, and GaP1-xAsx, which is a weakly perturbed alloy. In the composition ranges where these alloys have a direct band gap, we find that (i) in GaP1-xAsx, Mv,c is large (like the virtual-crystal value) and nearly composition independent; (ii) in GaAs1-xNx, Mv,c is strongly composition dependent: large for small x and small for large x; and (iii) in GaP1-xNx, Mv,c is only slightly composition dependent and is significantly reduced relative to the virtual-crystal value. The different behavior of GaP1-xAsx, GaP1-xNx, and GaAs1-xNx is traced to the existence/absence of impurity levels at the dilute alloy limits: (a) there are no gap-level impurity states at the x?1 or x?0 limits of GaP1-xAsx, (b) an isolated As impurity in GaN (GaN?:As) has a deep band gap impurity level but no deep impurity state is found for N in GaAs, and (c) GaN?:P exhibits a P-localized deep band-gap impurity state and GaP?:N has an N-localized resonant state. The existence of deep levels leads to wave-function localization in real space, thus to a spectral spread in momentum space and to a reduction of Mv,c. These impurity levels are facilitated by atomic relaxations, as evident by the fact that unrelaxed GaN?:As and GaN?:P, show no deep levels, have extended wave functions, and have large interband transition elements.

L. Bellaiche; Su-Huai Wei; Alex Zunger

1997-10-15T23:59:59.000Z

143

United States  

Broader source: Energy.gov (indexed) [DOE]

TexMex Energy, LLC TexMex Energy, LLC OE Docket No. EA-294-A Order Authorizing Electricity Exports to Mexico Order No. EA-294-A February 22, 2007 TexMex Energy, LLC Order No. EA-294-A I. BACKGROUND Exports of electricity from the United States to a foreign count~y are regulated by the Department of Energy (DOE) pursuant to sections 301(b) and 402(f) of the Department of Energy Organization Act (42 U.S.C. 7 15 1 (b), 71 72(f)) and require authorization under section 202(e) of the Federal Power Act (FPA) (16 U.S.C.824a(e)) . On August 25,2004, DOE issued Order No. EA-294 authorizing TexMex Energy LLC (TexMex) to transmit electric energy fiom the United States to Mexico as a power marketer. That authority expired on August 25, 2006. On September 8, 2006, TexMex applied to renew the electricity export authority

144

United States  

Gasoline and Diesel Fuel Update (EIA)

United States United States Coal ................................................ 4,367 4,077 4,747 4,181 4,473 4,125 4,983 4,330 4,414 4,003 4,796 4,178 4,344 4,479 4,348 Natural Gas .................................... 2,802 2,843 3,694 2,863 2,713 2,880 3,636 2,707 2,792 2,972 3,815 2,849 3,052 2,986 3,109 Petroleum (a) .................................. 74 73 81 67 73 70 75 66 75 70 76 66 74 71 71 Other Gases ................................... 32 33 36 32 32 34 37 33 33 35 39 34 33 34 35 Nuclear ........................................... 2,176 2,044 2,257 2,170 2,106 2,037 2,167 2,010 2,144 2,074 2,206 2,055 2,162 2,080 2,120 Renewable Energy Sources: Conventional Hydropower ........... 736 886 716 633 765 887 708 646 767 919 729 659 742 751 768 Wind ............................................ 491 520 353 449 477 521 379 475

145

United States  

Broader source: Energy.gov (indexed) [DOE]

Tenaslta Power Services Co. Tenaslta Power Services Co. OE Docket No. EA-243-A Order Authorizing Electricity Exports to Canada Order No. EA-243-A March 1,2007 Tenaska Power Services Co. Order No. EA-243-A I. BACKGROUND Exports of elcctricity from the United States to a foreign country are regulated by the Department of Energy (DOE) pursuant to sections 30 I(b) and 402(f) of the Departrncnt of' Energy Organizatio~l Act (42 U, S.C. 7 15 1 (b), 7 1 72Cf)) and rcquirc authorization under section 202(e) of the Federal Power Act (FPA) ( Z 6 U. s.c.824a(e)j1. On August 16,2001, DOE issued Order No. EA-243 authorizing Tenaska Power Scrvices Co. (Tenaska) to transmit electric cncrgy from the United States to Canada as a power marketer. That authority expired on August 16,2003. On August 14,2006, Teilaska applied to renew the electricity export authority

146

November 9, 2011 Planned Development Amendment  

E-Print Network [OSTI]

105 Tempe, AZ 85281 Cleanroom, HP Imaging, HPM HOK 191 Peachtree St. Suite 4100 Atlanta, GA 30303 Lab

Pritchard, Jonathan

147

Accepted with minor revisions by TNNLS Special Issue on Learning in Nonstationary and Evolving Environments  

E-Print Network [OSTI]

of Technology, Atlanta, GA 30332­0250 2Entergy Services, Inc., New Orleans, LA 70053 3Howard University, NW

Ji, Chuanyi

148

The Red-Cockaded Woodpecker: A Selectively Annotated Bibliography  

E-Print Network [OSTI]

species act. In TAPPI Proceedings of International1085-1092). Atlanta, GA: TAPPI Press. Provides a detailed

Wishard, Lisa

1998-01-01T23:59:59.000Z

149

Choice Based Revenue Management for Parallel Flights  

E-Print Network [OSTI]

Mar 6, 2014 ... We formulate corresponding deterministic (fluid) optimization ... and Systems Engineering, Georgia Institute of Technology, Atlanta, GA...

Jim Dai

2014-03-06T23:59:59.000Z

150

United States  

Broader source: Energy.gov (indexed) [DOE]

7 7 United States Department of Energy Southeastern Power Administration Wholesale Power Rate Schedule CTV-1-H Availability: This rate schedule shall be available to the Tennessee Valley Authority (hereinafter called TVA). Applicability: This rate schedule shall be applicable to electric capacity and energy generated at the Dale Hollow, Center Hill, Wolf Creek, Old Hickory, Cheatham, Barkley, J. Percy Priest, and Cordell Hull Projects (all of such projects being hereafter called collectively the "Cumberland Projects") and the Laurel Project sold under agreement between the Department of Energy and TVA. Character of Service: The electric capacity and energy supplied hereunder will be three-phase alternating current at a frequency of approximately 60 hertz at the outgoing terminals of the Cumberland

151

United States  

Broader source: Energy.gov (indexed) [DOE]

United States Department of Energy Southeastern Power Administration Wholesale Power Rate Schedule CTVI-1-A Availability: This rate schedule shall be available to customers (hereinafter called the Customer) who are or were formerly in the Tennessee Valley Authority (hereinafter called TVA) service area. Applicability: This rate schedule shall be applicable to electric capacity and energy generated at the Dale Hollow, Center Hill, Wolf Creek, Old Hickory, Cheatham, Barkley, J. Percy Priest, and Cordell Hull Projects (all of such projects being hereafter called collectively the "Cumberland Projects") and the Laurel Project sold under agreement between the Department of Energy and the Customer. Character of Service: The electric capacity and energy supplied hereunder will be three-phase alternating

152

UNITED STATES  

Office of Legacy Management (LM)

f).~<~~ \--\c :y-,ai F p"- KG f).~<~~ \--\c :y-,ai F p"- KG WASHINOTDN 28.0. C. ' -lr ' \ ' ' --- ".I ?--" ' z I. .~;-4.' J frr*o& 2 ii, - - -4 70-147 LRL:JCD JAN !! 8 1958 Oregon Metallurgical Corporation P. 0. Box 484 Albany, Oregon Attention: Mr. Stephen M. Shelton General Manager Gentlemen: Enclosed is Special Nuclear Material License No. SNM-144, as amended. Very 33uly yours, r:; I,;, ll)~gQ""d".- Lyall Johnson Chief, Licensing Branch Division of Licensing & Regulation Enclosure: SNM-144, as amended Distribution: bRO0 Attn: Dr. H.M.Roth DFMusser NMM MMMann INS JCRyan FIN (2) HSteele LRL SRGustavson LRL Document room Formal file Suppl. file Br & Div rf's ' .b liwwArry s/VW- ' q+ ' yj/ 2; 2-' , COP' 1 J JAM01958 -- UNITED STATES ATOMIC ENERGY COMMISSION

153

United States  

Broader source: Energy.gov (indexed) [DOE]

United States Department of Energy Southeastern Power Administration Wholesale Power Rate Schedule JW-2-F Availability: This rate schedule shall be available to the Florida Power Corporation (or Progress Energy Florida, hereinafter called the Company). Applicability: This rate schedule shall be applicable to electric energy generated at the Jim Woodruff Project (hereinafter called the Project) and sold to the Company in wholesale quantities. Points of Delivery: Power sold to the Company by the Government will be delivered at the connection of the Company's transmission system with the Project bus. Character of Service: Electric power delivered to the Company will be three-phase alternating current at a nominal frequency of 60 cycles per second.

154

United States  

Broader source: Energy.gov (indexed) [DOE]

Bangor Hydro-Electric Company Bangor Hydro-Electric Company OE Docket No. PP-89-1 Amendment to Presidential Permit Order No. PP-89-1 December 30,2005 PRESIDENTIAL PERMIT AMENDMENT Bangor Hydro-Electric Company Order No. PP-89-1 I. BACKGROUND The Department of Energy (DOE) has responsibility for implementing Executive Order (E.O.) 10485, as amended by E.O. 12038, which requires the issuance of a Presidential permit by DOE before electric trans~nission facilities may be constructed, operated, maintained, or connected at the borders of the United States. DOE may issue such a permit if it determines that the permit is in the public interest and after obtaining favorable recommendations from the U.S. Departments of State and Defense. On December 16, 1988, Bangor Hydro-Electric Company (BHE) applied to DOE

155

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

156

Princeton Plasma Physics Lab - General Atomics (GA)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
157

Termination unit  

DOE Patents [OSTI]

This invention relates to a termination unit comprising an end-section of a cable. The end section of the cable defines a central longitudinal axis and comprising end-parts of N electrical phases, an end-part of a neutral conductor and a surrounding thermally insulation envelope adapted to comprising a cooling fluid. The end-parts of the N electrical phases and the end-part of the neutral conductor each comprising at least one electrical conductor and being arranged in the cable concentrically around a core former with a phase 1 located relatively innermost, and phase N relatively outermost in the cable, phase N being surrounded by the neutral conductor, electrical insulation being arrange between neighboring electrical phases and between phase N and the neutral conductor, and wherein the end-parts of the neutral conductor and the electrical phases each comprise a contacting surface electrically connected to at least one branch current lead to provide an electrical connection: The contacting surfaces each having a longitudinal extension, and being located sequentially along the longitudinal extension of the end-section of the cable. The branch current leads being individually insulated from said thermally insulation envelope by individual electrical insulators.

Traeholt, Chresten [Frederiksberg, DK; Willen, Dag [Klagshamn, SE; Roden, Mark [Newnan, GA; Tolbert, Jerry C [Carrollton, GA; Lindsay, David [Carrollton, GA; Fisher, Paul W [Heiskell, TN; Nielsen, Carsten Thidemann [Jaegerspris, DK

2014-01-07T23:59:59.000Z

158

Preview of AAAS Meeting, Atlanta  

Science Journals Connector (OSTI)

...Science Teachers Association. Arranged by Katherine Hertzka, Hoke Smith High School and...Bradford D. Ansley, Edwina Davis, and Katherine Barnwell. Roland H. Berg will preside...of Business-Administration. George Wheeler, Oglethorpe Univer-sity. Committee...

Raymond L. Taylor

1955-12-02T23:59:59.000Z

159

Preview of AAAS Meeting, Atlanta  

Science Journals Connector (OSTI)

...Laboratories; Clyde L. 'Cowan, Jr., Los Alamos Scien-tific Laboratory; Arthur E...Pharmaceuti-cals. Color; 15 min. The Suspension Bridge. U.S. Steel Corp. Color...Dal-las, and San Francisco; 9,300 employees are engaged in the annual production...

Raymond L. Taylor

1955-12-02T23:59:59.000Z

160

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

162

Structural properties of Bi-terminated GaAs(001) surface  

Science Journals Connector (OSTI)

Electronic and structural properties of Bi-terminated reconstructions on GaAs(001) surface have been studied by scanning tunneling microscopy (STM) and synchrotron radiation core-level spectroscopy. A 23 monolayer thick Bi-layer was evaporated on a Ga-terminated GaAs(001) surface. By heating the surface, the reconstruction changed from (2נ1) to (2נ4). The ?2 phase with one top Bi dimer and one As or Bi dimer in the third atomic layer per surface unit cell is proposed to explain the STM images of the Bi/GaAs(001)(2נ4) surface heated at 400C. Bi 5d photoemission from the Bi/GaAs(2נ4) consisted of two components suggesting two different bonding sites for Bi atoms on the (2נ4) surface. The variation of the surface sensitivity of the photoemission induced no changes in the intensities of the components indicating that the origins of both components lie in the first surface layer.

M. Ahola-Tuomi; P. Laukkanen; R.E. Perl; M. Kuzmin; J. Pakarinen; I.J. Vyrynen; M. Adell

2006-01-01T23:59:59.000Z

163

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Structural and Geographic Characteristics of Homes in South Region, Divisions, and States, 2009" 0 Structural and Geographic Characteristics of Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" "Structural and Geographic Characteristics",,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" ,,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX"

164

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Computers and Other Electronics in Homes in South Region, Divisions, and States, 2009" 0 Computers and Other Electronics in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Computers and Other Electronics",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX"

165

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network [OSTI]

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

166

Band gaps in InN/GaN superlattices: Nonpolar and polar growth directions  

SciTech Connect (OSTI)

The electronic structures of nonpolar short-period InN/GaN superlattices (SLs) grown in the wurtzite a- and m-directions have been calculated and compared to previous calculations for polar superlattices (grown in the c-direction). The variation of the band gaps with the composition (m, n) of the mInN/nGaN unit cells of the superlattices was examined. The band structures were obtained by self-consistent calculations based on the local density approximation to the density functional theory using the Linear-Muffin-Tin-Orbital method with a semi-empirical correction for the band gaps. The calculated band gaps and their pressure coefficients for nonpolar superlattices are similar to those calculated for bulk InGaN alloys with an equivalent In/Ga concentration ratio. This is very different from what has been found in polar superlattices where the band gaps are much smaller and vanish when the number m of InN layers in the unit cell exceeds three. A strong internal electric field is responsible for this behavior of polar structures. Experimental photoluminescence data for polar SLs agree very well with gaps calculated for the nonpolar structures. It is suggested that this is caused by screening of the electric field in the polar structures by carriers originating from unintentional defects.

Gorczyca, I., E-mail: iza@unipress.waw.pl; Skrobas, K.; Suski, T. [Institute of High Pressure Physics, UNIPRESS, 01-142 Warsaw (Poland); Christensen, N. E.; Svane, A. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark)

2013-12-14T23:59:59.000Z

167

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

168

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

169

File:USDA-CE-Production-GIFmaps-GA.pdf | Open Energy Information  

Open Energy Info (EERE)

GA.pdf GA.pdf Jump to: navigation, search File File history File usage Georgia Ethanol Plant Locations Size of this preview: 776 × 600 pixels. Full resolution ‎(1,650 × 1,275 pixels, file size: 410 KB, MIME type: application/pdf) Description Georgia Ethanol Plant Locations Sources United States Department of Agriculture Related Technologies Biomass, Biofuels, Ethanol Creation Date 2010-01-19 Extent State Countries United States UN Region Northern America States Georgia External links http://www.nass.usda.gov/Charts_and_Maps/Ethanol_Plants/ File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 16:12, 27 December 2010 Thumbnail for version as of 16:12, 27 December 2010 1,650 × 1,275 (410 KB) MapBot (Talk | contribs) Automated bot upload

170

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network [OSTI]

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

171

Washington, D. C. United States Department of the Interior  

E-Print Network [OSTI]

located at Swan Island, Portland, Oregon; or Post Oftice #12;Box 1306, Albuquerque, New Mexico; or 1006 W. Lake Street, Minneapoli8, Minnesota; or 310 Glenn Building, Atlanta, Georgia; or 1105 Blake Building

172

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

173

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect (OSTI)

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

174

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

175

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect (OSTI)

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

176

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

2 Fuels Used and End Uses in U.S. Homes, by OwnerRenter Status, 2009" " Million Housing Units, Final" ,,,,"Housing Unit Type" ,,,,"Single-Family Units",,,,"Apartments in Buildings...

177

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

2 Household Demographics of U.S. Homes, by OwnerRenter Status, 2009" " Million Housing Units, Final" ,,,,"Housing Unit Type" ,,,,"Single-Family Units",,,,"Apartments in Buildings...

178

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

Asked (Apartments in Buildings" "With 5 or More Units)",19.1,5.8,6.2,2.8,2.8,1.5 "FoundationBasement of Single-Family" "Units and Apartments in Buildings With" "2 to 4 Units...

179

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

"Not Asked (Apartments in Buildings" "With 5 or More Units)",19.1,4.4,3.7,6.2,4.7 "FoundationBasement of Single-Family" "Units and Apartments in Buildings With" "2 to 4 Units...

180

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

"Not Asked (Apartments in Buildings" "With 5 or More Units)",19.1,9.6,5,2.2,1.5,0.8 "FoundationBasement of Single-Family" "Units and Apartments in Buildings With" "2 to 4 Units...

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect (OSTI)

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

182

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

183

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction  

Science Journals Connector (OSTI)

We report a nondestructive large-area method to characterize dislocation formation at a highly lattice-mismatched interface. The analysis is based on x-ray diffraction and reciprocal space mapping using a standard lab-based diffractometer. We use this technique to identify and analyze a two-dimensional array of 90 misfit dislocations at a GaSb/GaAs interface. The full width at half maximum of the GaSb 004 reciprocal lattice point is shown to decrease with increasing GaSb epilayer thickness as expected from theoretical models. Based on these measurements the variation in the spatial dislocation frequency is calculated to be 1%.

Charles J. Reyner; Jin Wang; Kalyan Nunna; Andrew Lin; Baolai Liang; Mark S. Goorsky; D. L. Huffaker

2011-01-01T23:59:59.000Z

184

GaNInGaN LED efficiency reduction from parasitic electron currents in p-GaN  

Science Journals Connector (OSTI)

Abstract This paper presents observations of a previously unidentified source of performance limitation for GaNInGaN LED devices. While most studies focus on output saturation known as current droop from InGaN layer effects, we show an alike influence from p-type GaNs inherent background electron concentration. p-GaN material was investigated to confirm that, even though the material had an excess of holes, the background electrons were indeed present and were influencing the charge flow across device electrodes. This current does not cross LED heterojunctions but rather drifts toward its proximal device electrode, causing a source of heating while providing no carriers for light emitting recombination. The effects of this current were explored in an LED configuration, whose output showed weak efficiency at very low biases in addition to that from current droop. While the shortcoming under small currents has previously been attributed to electron tunneling across the junction, we propose that the background electrons inside p-GaN could be another explanation.

G. Togtema; V. Georgiev; D. Georgieva; R. Gergova; K.S.A. Butcher; D. Alexandrov

2015-01-01T23:59:59.000Z

185

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

186

Thermophotovoltaic furnacegenerator for the home using low bandgap GaSb cells  

Science Journals Connector (OSTI)

It is well known that distributed combined heat and power (CHP) systems for commercial and industrial buildings are economically desirable because they conserve energy. Here, a thermophotovoltaic (TPV) unit is described that brings CHP into the home providing both heat and electric power by replacing the typical home heating furnace with a combined TPV furnacegenerator. First, the design of a 1.5 kWelectric/12.2 kWthermal TPV furnacegenerator is described along with the key components that make it possible. Diffused junction GaSb cells are one of these key components. Secondly, an economic cost target is determined for this system where the cost of the photovoltaic array will be key to the economical implementation of this concept. Finally, it is argued that the GaSb cells and arrays can be manufactured at the required low cost. The cost target can be reached because the GaSb cells in the TPV furnacegenerator can produce an electrical power density of 1 W cm?2 which is 100 times higher than the typical solar cell. The cost target can also be reached because the GaSb cell fabrication process parallels the silicon solar cell process where no toxic gases are used, no wafer polish is required and cast polycrystalline cells can be used.

L M Fraas; J E Avery; H X Huang

2003-01-01T23:59:59.000Z

187

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a  

E-Print Network [OSTI]

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a Anna Fontcuberta i Morral,b and Harry, Pasadena, California 91125 Daniel J. Aiken Emcore Photovoltaics, Albuquerque, New Mexico 87123 Mark W. Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 19 March 2006; accepted 26

Atwater, Harry

188

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

189

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect (OSTI)

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

190

Auditory Menus Are Not Just Spoken Visual Menus: A Case Study of  

E-Print Network [OSTI]

Interface Copyright is held by the author/owner(s). CHI 2010, April 10­15, 2010, Atlanta, Georgia, USA. ACM Institute of Technology 654 Cherry Street, Atlanta, GA, 30332 USA davison@gatech.edu Bruce N. Walker Street, Atlanta, GA, 30332 USA bruce.walker@psych.gatech.edu CHI 2010: Work-in-Progress (Spotlight

191

SciTech Connect: "light emitting diodes"  

Office of Scientific and Technical Information (OSTI)

light emitting diodes" Find light emitting diodes" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

192

SciTech Connect: "August 2003 blackout"  

Office of Scientific and Technical Information (OSTI)

August 2003 blackout" Find August 2003 blackout" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

193

SciTech Connect: "solar plasma wind"  

Office of Scientific and Technical Information (OSTI)

solar plasma wind" Find solar plasma wind" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

194

SciTech Connect: "gamma ray bursts"  

Office of Scientific and Technical Information (OSTI)

gamma ray bursts" Find gamma ray bursts" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

195

Development of a Bulk GaN Growth Technique for Low Defect Density, Large-Area Native Substrates  

Broader source: Energy.gov (indexed) [DOE]

the Electrochemical Solution the Electrochemical Solution Growth (ESG) Technique for Native GaN Substrates DOE Energy Storage & Power Electronics Research Program 30 September 2008 PI: Karen Waldrip Advanced Power Sources R&D, Dept 2546 PM: Stan Atcitty, John Boyes Sandia National Laboratories, Albuquerque, NM, 87185 Sponsor: Gil Bindewald, DOE Power Electronics & Energy Storage Program Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. Outline * Motivation * Existing GaN Growth Technique - Epitaxial Lateral Overgrowth - Methods for Growing Bulk GaN * Development of the Electrochemical Solution Growth Technique

196

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

197

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

198

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network [OSTI]

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

199

Permissive role of the acidification caused by wheat aleurone layers upon. alpha. -amylase induction by GA sub 3  

SciTech Connect (OSTI)

Wheat aleurone has the capacity of acidifying the incubation medium in 1 to 2 pH units. The {alpha}-amylase induction by GA{sub 3} in isolated wheat aleurone layers is strongly dependent on acidic pH of the medium (pH < 5). To examine possible mechanisms {sup 35}-Met incorporation into proteins and {alpha}-amylase, in the presence of GA{sub 3} and Ca{sup 2+} at pH, 4, 5 and 6 was studied. Although {sup 35}-Met uptake decreased markedly ({approx} 90%) at pH 4 in thepresence of GA{sub 3}, incorporation into total protein did not change significantly from other conditions. Auto-radiography of SDS-PAGE showed that most of the amino acid was in the {alpha}-amylase band, meaning that the effect of acidic pH is specific for GA{sub 3} actions on aleurone tissue. On the other hand, an increase of protonated GA{sub 3} diffusion could be ruled out. Also, there was not {alpha}-amylase inactivation at pH 6. These findings point out to the important physiological role of the acidification caused by the aleurone.

Rodriguez-Campos, E.; Bernal-Lugo, I.; Hamabata, A. (CINVESTAV-IPN (Mexico))

1989-04-01T23:59:59.000Z

200

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

GA-AL-SC | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

202

Low Efficiency Droop Green Nano-Pyramid {10 -11} InGaN/GaN Multiple Quantum Well LED  

Science Journals Connector (OSTI)

We report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {10 1} nano-pyramid facets. The device physics...

Cheng, Yuh-Jen; Chang, Shih-Pang; Lin, Da-Wei; Kuo, Hao-chung; Xiong, Kang-lin

203

InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting  

Science Journals Connector (OSTI)

Hydrogen generation through water splitting by n-InGaN working electrodes with bias generated from GaAs solar cell was studied. Instead of using an external bias provided by power...

Liu, Shu-Yen; Sheu, J K; Lin, Yu-Chuan; Chen, Yu-Tong; Tu, S J; Lee, M L; Lai, W C

2013-01-01T23:59:59.000Z

204

Reaktive Molekularstrahlepitaxie und Charakterisierung von GaN/(Al,Ga)N-Heterostrukturen auf SiC(0001).  

E-Print Network [OSTI]

??Thema dieser Arbeit ist die Synthese von hexagonalen GaN/(Al,Ga)N-Heterostrukturen mittels reaktiver Molekularstrahlepitaxie (MBE) auf SiC(0001)-Substraten. Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, optischen und (more)

Thamm, Andreas

2001-01-01T23:59:59.000Z

205

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

206

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

in Buildings" "With 5 or More Units)",19.1,4.4,1,0.5,0.5,3.4,2.4,0.6,0.5 "FoundationBasement of Single-Family" "Units and Apartments in Buildings With" "2 to 4 Units...

207

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

"With 5 or More Units)",19.1,2.3,16.8,"N","N","N","N","N","N",2.3,16.8,"N","N" "FoundationBasement of Single-Family" "Units and Apartments in Buildings With" "2 to 4 Units...

208

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

in Buildings" "With 5 or More Units)",19.1,2,0.7,1.3,2.6,4.1,3.5,2.5,2.4 "FoundationBasement of Single-Family" "Units and Apartments in Buildings With" "2 to 4 Units...

209

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

"With 5 or More Units)",19.1,6.2,3.5,0.5,0.5,1.1,0.6,"Q",0.7,0.4,0.2,2,1.4,0.6 "FoundationBasement of Single-Family" "Units and Apartments in Buildings With" "2 to 4 Units...

210

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

Buildings" "With 5 or More Units)",19.1,4.7,0.9,0.4,0.3,"Q",0.6,0.4,"Q",3.8,2.9,0.9 "FoundationBasement of Single-Family" "Units and Apartments in Buildings With" "2 to 4 Units...

211

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

in Buildings" "With 5 or More Units)",19.1,3.7,2.7,0.9,0.6,0.3,0.9,1,0.2,0.6,0.2 "FoundationBasement of Single-Family" "Units and Apartments in Buildings With" "2 to 4 Units...

212

Unit Testing Discussion C  

E-Print Network [OSTI]

Unit Testing Discussion C #12;Unit Test public Method is smallest unit of code Input/output transformation Test if the method does what it claims Not exactly black box testing #12;Test if (actual result Expected Computed Input #12;Functionality Computation ­ Easy to test Time based Asynchronous interaction

Massachusetts at Amherst, University of

213

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Air Conditioning in Homes in South Region, Divisions, and States, 2009" 0 Air Conditioning in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Air Conditioning",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

214

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Water Heating in U.S. Homes in South Region, Divisions, and States, 2009" 0 Water Heating in U.S. Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Water Heating",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

215

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Space Heating in U.S. Homes in South Region, Divisions, and States, 2009" 0 Space Heating in U.S. Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Space Heating",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

216

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Fuels Used and End Uses in Homes in South Region, Divisions, and States, 2009" 0 Fuels Used and End Uses in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Fuels Used and End Uses",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

217

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Appliances in Homes in South Region, Divisions, and States, 2009" 0 Appliances in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Appliances",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

218

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Televisions in Homes in South Region, Divisions, and States, 2009" 0 Televisions in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Televisions",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

219

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Household Demographics of Homes in South Region, Divisions, and States, 2009" 0 Household Demographics of Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Household Demographics",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

220

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells.  

E-Print Network [OSTI]

??Thema dieser Arbeit ist die Synthese von Wurtzit M-plane (In,Ga)N(1-100)-Heterostrukturen auf g-LiAlO2(100) mittels plasmauntersttzter Molekularstrahlepitaxie (MBE). Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, und (more)

Sun, Yue-Jun

2004-01-01T23:59:59.000Z

222

Development of Polarized Electron Source of GaAs-AlGaAs Superlattice and Strained GaAs  

Science Journals Connector (OSTI)

At Nagoya University, we have continued the development of GaAs polarized electron source (PES) for several years. Our test ... a gun producing (15) KeV polarized electrons and a standard 100 KeV Mott polarimete...

T. Nakanishi; S. Nakamura

1991-01-01T23:59:59.000Z

223

A rapid analytical pyrolysis method - Alfalfa (Medicago sativa)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Increase in 4-coumaryl alcohol (H) units during lignification in Increase in 4-coumaryl alcohol (H) units during lignification in alfalfa (Medicago sativa) alters extractability and molecular weight of lignin Angela Ziebell 1,2 , Kristen Gracom ,1,2 , Rui Katahira 1 , Fang Chen 3,4 , Yunqiao Pu 5,6 , Art Ragauskas 5,6 , Richard A. Dixon 3,4 and Mark Davis 1,2 1-National Bioenergy Center, National Renewable Energy Laboratory, Golden, CO 80401-3393; 2-Bioenergy Science Center, National Renewable Energy Laboratory, 1617 Golden, CO 80401-3393; 3-Samuel Roberts Noble Foundation, Ardmore, OK 73401; 4-Bioenergy Science Center, Ardmore, OK 73401; 5-Institute of Paper Science and Technology at Georgia Tech., Atlanta, GA 30318; 6-Bioenergy Science Center, Georgia Tech., Atlanta, GA 30318 Running head: Increase in coumaryl alcohol units alters lignin molecular weight

224

c3fb13dd06a8704143923ce0a744bf57  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

HSQC (heteronuclear single quantum coherence) 13 C- 1 H correlation spectra of whole biomass in perdeuterated pyridinium chloride-DMSO system: An effective tool for evaluating pretreatment Reichel Samuel a,c , Marcus Foston a,c , Nan Jaing a,c , Shilin Cao a , Lenong Allison a,c , Michael Studer c , Charles Wyman c , Arthur J. Ragauskas a,b,c,⇑ a School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, GA, United States b Institute of Paper Science and Technology, Georgia Institute of Technology, Atlanta, GA, United States c BioEnergy Science Center, CE-CERT and Chemical and Environmental Engineering Department, Bourns College of Engineering, University of California, Riverside, CA, United States a r t i c l e i n f o Article history: Received 5 May 2010 Received in revised form 12 April 2011 Accepted 18 April 2011 Available online 30 April 2011 Keywords:

225

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures  

SciTech Connect (OSTI)

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap E{sub g} and the spin orbit splitting energy ?{sub so}, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which ?{sub so},> E{sub g} occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.

Hild, K.; Batool, Z.; Jin, S. R.; Hossain, N.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Hosea, T. JC. [1 Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK and also, Ibnu Sina Institute, Universiti Teknologi Malaysia, Johor Bahru, 81310 (Malaysia); Lu, X. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6, Canada and now VarianSemiconductor Equipment Associates, Gloucester, MA 01930 (United States); Tiedje, T. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6 (Canada)

2013-12-04T23:59:59.000Z

226

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

227

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

228

Multiband GaNAsP Quaternary Alloys  

SciTech Connect (OSTI)

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

229

Implantation of carbon in GaAs  

SciTech Connect (OSTI)

Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.

Moll, A.J.

1992-03-01T23:59:59.000Z

230

O?[]O? nuclear ?-decay of ?Ga  

E-Print Network [OSTI]

The branching ratio for the ?-Decay of ?Ga to the first excited O? state in ?Zn has been measured. It is possible to use this branching ratio to test the theoretical method of calculating the [] component of the charge correction term [], which...

Hyman, Bruce Carl

2012-06-07T23:59:59.000Z

231

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect (OSTI)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16 from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

232

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells  

SciTech Connect (OSTI)

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R. [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qubec (Canada)] [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qubec (Canada); Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K. [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)] [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Fafard, S. [Cyrium Technologies Inc., Ottawa, ON (Canada)] [Cyrium Technologies Inc., Ottawa, ON (Canada)

2013-09-27T23:59:59.000Z

233

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

2013-11-25T23:59:59.000Z

234

Transmission Business Unit Manager  

Broader source: Energy.gov [DOE]

(See Frequently Asked Questions for more information). Where would I be working? Western Area Power Administration Rocky Mountain Region Transmission Services, (J7300) Transmission Busiess Unit 615...

235

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

1 Space Heating in U.S. Homes in West Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"West Census Region" ,,,"Mountain Census Division",,,"Pacific...

236

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

0 Household Demographics of Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census...

237

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

0 Fuels Used and End Uses in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census...

238

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

1 Household Demographics of Homes in West Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"West Census Region" ,,,"Mountain Census Division",,,"Pacific...

239

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

HC.1.11 Fuels Used and End Uses in Homes in West Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"West Census Region" ,,,"Mountain Census...

240

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

0 Space Heating in U.S. Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East...

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

8 Space Heating in U.S. Homes in Northeast Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"Northeast Census Region" ,,,"New England Census...

242

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

9 Household Demographics of Homes in Midwest Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"Midwest Census Region" ,,,"East North Central Census...

243

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

9 Space Heating in U.S. Homes in Midwest Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"Midwest Census Region" " ",,,"East North Central Census...

244

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

9 Fuels Used and End Uses in Homes in Midwest Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"Midwest Census Region" ,,,"East North Central Census...

245

Structures of the As-deficient phase on GaAs(001)-(24)  

Science Journals Connector (OSTI)

The atomic structures of the GaAs(001)-(24) surface have been studied using scanning tunneling microscopy (STM), reflectance difference spectroscopy (RDS), and reflection high-energy electron diffraction (RHEED). While STM images from the ? phase show well-ordered ?2 structures, the ? phase consists of (24) structures with surface As dimers locally missing from the basic ?2(24) units. Our RDS and RHEED analyses, together with STM observations, clearly show that the missing-dimer defect has local atomic geometry identical to the ?2(24) structure.

Akihiro Ohtake

2006-10-19T23:59:59.000Z

246

Infrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a  

E-Print Network [OSTI]

GaP single QW surrounded by AlGaInP waveguide WG and cladding layers, whereas the NIR laser incorporates a GaInfrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a Robert in GaAs-based broad-area laser diodes. Spectrally and spatially resolved scanning optical microscopy

Peinke, Joachim

247

United States Patent [191 Jalali et al.  

E-Print Network [OSTI]

antennas: SPIE vol. 1703 (1992) 264-271. GA Magel et al.: "Phosphosilicate Glass waveguides for phased

Jalali. Bahram

248

Summary Max Total Units  

Broader source: Energy.gov (indexed) [DOE]

Max Total Units Max Total Units *If All Splits, No Rack Units **If Only FW, AC Splits 1000 52 28 28 2000 87 59 35 3000 61 33 15 4000 61 33 15 Totals 261 153 93 ***Costs $1,957,500.00 $1,147,500.00 $697,500.00 Notes: added several refrigerants removed bins from analysis removed R-22 from list 1000lb, no Glycol, CO2 or ammonia Seawater R-404A only * includes seawater units ** no seawater units included *** Costs = (total units) X (estimate of $7500 per unit) 1000lb, air cooled split systems, fresh water Refrig Voltage Cond Unit IF-CU Combos 2 4 5 28 References Refrig Voltage C-U type Compressor HP R-404A 208/1/60 Hermetic SA 2.5 R-507 230/1/60 Hermetic MA 2.5 208/3/60 SemiHerm SA 1.5 230/3/60 SemiHerm MA 1.5 SemiHerm HA 1.5 1000lb, remote rack systems, fresh water Refrig/system Voltage Combos 12 2 24 References Refrig/system Voltage IF only

249

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

250

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network [OSTI]

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

251

Monolithic integration of GaAs and h~~~~Ga~.~Aslasers by molecular epitaxy on GaAs  

E-Print Network [OSTI]

where the thick cladding layer below the active laser region acts as a buffer layer to-yield comparable epitaxial regrowth of Ino.aGaesAs lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the -first time- to monolithically integrate these two lasers emitting near 1

252

Kohlenstoffhaltige ternre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternren Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner drften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

253

Microsoft Word - GT-ORNL - Quarterly Report - Ending 3 2010.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

3-31-2010 3-31-2010 Methane Recovery from Hydrate-bearing Sediments Funding Number: DE-FC26-06NT42963 Submitted By: J. Carlos Santamarina Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0355 Phone: (404)-894.7605 Fax: (404)-894.2278 E-mail: jcs@gatech.edu Costas Tsouris Oak Ridge National Laboratory Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0373 E-mail: costas.tsouris@ce.gatech.edu Acknowledgment: This material is based upon work supported by the Department of Energy under Award Number DE-FC26-06NT42963 Disclaimer: This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes

254

Microsoft Word - GT-ORNL - Quarterly Report - Sep 2010.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

September 2010 September 2010 Methane Recovery from Hydrate-bearing Sediments Funding Number: DE-FC26-06NT42963 Submitted By: J. Carlos Santamarina Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0355 Phone: (404)-894.7605 Fax: (404)-894.2278 E-mail: jcs@gatech.edu Costas Tsouris Oak Ridge National Laboratory Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0373 E-mail: costas.tsouris@ce.gatech.edu Acknowledgment: This material is based upon work supported by the Department of Energy under Award Number DE-FC26-06NT42963 Disclaimer: This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes any

255

Microsoft Word - GT-ORNL - Quarterly Report - Ending 12 2009.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

12-31-2009 12-31-2009 Methane Recovery from Hydrate-bearing Sediments Funding Number: DE-FC26-06NT42963 Submitted By: J. Carlos Santamarina Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0355 Phone: (404)-894.7605 Fax: (404)-894.2278 E-mail: jcs@gatech.edu Costas Tsouris Oak Ridge National Laboratory Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0373 E-mail: costas.tsouris@ce.gatech.edu Acknowledgment: This material is based upon work supported by the Department of Energy under Award Number DE-FC26-06NT42963 Disclaimer: This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees,

256

Microsoft Word - GT-ORNL - Quarterly Report - July 2010.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

July 2010 July 2010 Methane Recovery from Hydrate-bearing Sediments Funding Number: DE-FC26-06NT42963 Submitted By: J. Carlos Santamarina Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0355 Phone: (404)-894.7605 Fax: (404)-894.2278 E-mail: jcs@gatech.edu Costas Tsouris Oak Ridge National Laboratory Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0373 E-mail: costas.tsouris@ce.gatech.edu Acknowledgment: "This material is based upon work supported by the Department of Energy under Award Number DE-FC26-06NT42963." Disclaimer: "This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor

257

U.S. LNG Imports from United Arab Emirates  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

258

Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells  

SciTech Connect (OSTI)

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

2000-07-01T23:59:59.000Z

259

U.S. LNG Imports from United Arab Emirates  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

260

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures  

SciTech Connect (OSTI)

The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)

Chel'nyi, A A; Aluev, A V; Maslov, S V [M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

2004-01-31T23:59:59.000Z

262

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect (OSTI)

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

263

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

264

Next Generation Rooftop Unit  

Broader source: Energy.gov (indexed) [DOE]

Next Generation Rooftop Unit - Next Generation Rooftop Unit - CRADA Bo Shen Oak Ridge National Laboratory shenb@ornl.gov; 865-574-5745 April 3, 2013 ET R&D project in support of DOE/BTO Goal of 50% Reduction in Building Energy Use by 2030. CRADA project with Trane TOP US Commercial HVAC Equipment OEM 2 | Building Technologies Office eere.energy.gov Purpose & Objectives Problem Statement: half of all US commercial floor space cooled by packaged AC units, consumes more than 1.0 Quad source energy/year; highly efficient systems needed

265

Next Generation Rooftop Unit  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Next Generation Rooftop Unit - Next Generation Rooftop Unit - CRADA Bo Shen Oak Ridge National Laboratory shenb@ornl.gov; 865-574-5745 April 3, 2013 ET R&D project in support of DOE/BTO Goal of 50% Reduction in Building Energy Use by 2030. CRADA project with Trane TOP US Commercial HVAC Equipment OEM 2 | Building Technologies Office eere.energy.gov Purpose & Objectives Problem Statement: half of all US commercial floor space cooled by packaged AC units, consumes more than 1.0 Quad source energy/year; highly efficient systems needed

266

Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN  

Science Journals Connector (OSTI)

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN...

Yu, Chun-Ta; Lai, Wei-Chih; Yen, Cheng-Hsiung; Hsu, Hsu-Cheng; Chang, Shoou-Jinn

2014-01-01T23:59:59.000Z

267

Surface Science Analysis of GaAs Photocathodes Following Sustained...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, strained super-lattice GaAs photocathode samples, removed from the CEBAF...

268

P-type doping of GaN  

SciTech Connect (OSTI)

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Wong, R.K.

2000-04-10T23:59:59.000Z

269

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance  

Science Journals Connector (OSTI)

A contacted electroreflectance technique was used to investigate AlGaN/GaN heterostructures and their intrinsic electric field-induced properties. By studying variations in the electroreflectance with applied field spectral features associated with the AlGaN barrier the two-dimensional electron gas at the interface and bulk GaN were identified. Barrier-layer composition and electric field were determined from the AlGaN FranzKeldysh oscillations. For a high mobilityheterostructure grown on SiC measured AlGaN polarizationelectric field and two-dimensional electron gas density approached values predicted by a standard bandstructure model. The two-dimensional electron gas produced a broad field-tunable first derivative electroreflectance feature. With a dielectric function calculation we describe the line shape and relative amplitude of the two-dimensional electron gas electroreflectance feature for a wide range of electron density and applied field values.

S. R. Kurtz; A. A. Allerman; D. D. Koleske; A. G. Baca; R. D. Briggs

2004-01-01T23:59:59.000Z

270

Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m  

SciTech Connect (OSTI)

The spectral-kinetic properties of heterostructures with GaAs/GaAsSb-based and GaAsSb/InGaAs/GaAs-based quantum wells, emitting in the range of 1.0-1.2 {mu}m are studied with picosecond and nanosecond temporal resolution. Intense photoluminescence in the GaAsSb/InGaAs/GaAs structure, as well as an increase in the photoluminescence wavelength by a factor of 2.5 and a shift of the location of the maximum of the peak ({approx}100 meV) to the longer-wavelength region were observed up to room temperature. It is established that as the molar fraction of Sb and the thickness of the InGaAs layer increase, the energy of the fundamental transition decreases by a factor of 140 meV compared with the GaAsSb/InGaAs/GaAs structure with a lower Sb content and a smaller thickness of the InGaAs layer. At 300 K, the emission wavelength of such a structure was 1.18 {mu}m. In addition, an increase in the thickness of the InGaAs layer led to an increase in the room-temperature photoluminescence intensity by a factor of 60, which is associated with a decrease in the energy of the fundamental state for electrons in the InGaAs layer and, consequently, to larger electron localization and smaller temperature quenching of photoluminescence.

Morozov, S. V., E-mail: more@ipm.sci.-nnov.ru; Kryzhkov, D. I.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Vikhrova, O. I. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)] [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

2013-11-15T23:59:59.000Z

271

Vacancy-Induced 22 Reconstruction of the Ga(111) Surface of GaAs  

Science Journals Connector (OSTI)

Vacancy formation on the GaAs(111) surface is calculated to be strongly exothermic in character. The creation of one vacancy in each 22 cell allows the remaining Ga surface atoms to have a large inward relaxation, resulting in a 2.3-eV reduction in energy. It also transforms the polar (111) surface into a nonpolar (110)-like surface. The calculations provide strong support for the vacancy model of Tong et al., which is determined from analysis of low-energy-electron-diffraction data.

D. J. Chadi

1984-05-21T23:59:59.000Z

272

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Nel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

273

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots  

SciTech Connect (OSTI)

Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous laser irradiation. The time constants varied from tens of minutes to several hours, depending on the applied laser power. Based on the spectral evolution, it was concluded that the observed phenomenon should originate from laser induced structural damage and a sustained increase of non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay dynamics at different laser powers, it is argued that there should exist other processes that hinder PL degradation at a high laser power.

Zhang Hongyi; Chen Yonghai; Zhou Xiaolong; Jia Yanan; Ye Xiaoling; Xu Bo; Wang Zhanguo [Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2013-05-07T23:59:59.000Z

274

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect (OSTI)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

275

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

3 Household Demographics of U.S. Homes, by Year of Construction, 2009" " Million Housing Units, Final" ,,"Year of Construction" ,"Total U.S.1 (millions)" ,,"Before 1940","1940 to...

276

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

3 Space Heating in U.S. Homes, by Year of Construction, 2009" " Million Housing Units, Final" ,,"Year of Construction" ,"Total U.S.1 (millions)" ,,"Before 1940","1940 to...

277

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

5 Fuels Used and End Uses in U.S. Homes, by Household Income, 2009" " Million Housing Units, Final" ,,"Household Income" ,"Total U.S.1 (millions)",,,"Below Poverty Line2"...

278

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

7 Space Heating in U.S. Homes, by Census Region, 2009" " Million Housing Units, Final" ,,"Census Region" ,"Total U.S.1 (millions)" ,,"Northeast","Midwest","South","West" "Space...

279

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

5 Space Heating in U.S. Homes, by Household Income, 2009" " Million Housing Units, Final" ,,"Household Income" ,"Total U.S.1 (millions)",,,"Below Poverty Line2" ,,"Less than...

280

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

4 Space Heating in U.S. Homes, by Number of Household Members, 2009" " Million Housing Units, Final" ,,"Number of Household Members" ,"Total U.S.1 (millions)" ,,,,,,"5 or More...

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

6 Space Heating in U.S. Homes, by Climate Region, 2009" " Million Housing Units, Final" ,,"Climate Region2" ,"Total U.S.1 (millions)" ,,"Very Cold","Mixed- Humid","Mixed-Dry"...

282

United Cool Air  

Broader source: Energy.gov [DOE]

While our process may start with a "basic model" it is seldom that we fabricate more than a few units that are identical. Therefore, the definition of "basic model" has a large impact on the...

283

Associative list processing unit  

DOE Patents [OSTI]

An associative list processing unit and method comprising employing a plurality of prioritized cell blocks and permitting inserts to occur in a single clock cycle if all of the cell blocks are not full.

Hemmert, Karl Scott; Underwood, Keith D

2014-04-01T23:59:59.000Z

284

United States Department of  

E-Print Network [OSTI]

of a typical wind energy production facility, the results warrant further research on the use of acoustic;1 INTRODUCTION Over the past decade, wind energy production capacity in the United States has increased

285

United States of Agriculture  

E-Print Network [OSTI]

United States Department of Agriculture Forest Service Rocky Mountain Research Station Proceedings Research Station. 130 p. Declinesinhabitatofgreatersage, grazing practices, changes in wildfire regimes, increased spread of invasive species, gas and oil

286

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect (OSTI)

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

287

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

288

EIS-0476: Vogtle Electric Generating Plant, Units 3 and 4 | Department of  

Broader source: Energy.gov (indexed) [DOE]

76: Vogtle Electric Generating Plant, Units 3 and 4 76: Vogtle Electric Generating Plant, Units 3 and 4 EIS-0476: Vogtle Electric Generating Plant, Units 3 and 4 Summary This EIS evaluates the environmental impacts of construction and startup of the proposed Units 3 and 4 at the Vogtle Electric Generating Plant in Burke County, Georgia. DOE adopted two Nuclear Regulatory Commission EISs associated with this project (i.e., NUREG-1872, issued 8/2008, and NUREG-1947, issued 3/2011). Public Comment Opportunities No public comment opportunities available at this time. Documents Available for Download February 17, 2012 EIS-0476: Notice of Adoption of Final Environmental Impact Statement Vogtle Electric Generating Plant, Units 3 and 4, Issuance of a Loan Guarantee to Support Funding for Construction, Burke County, GA

289

Localized corrosion of GaAs surfaces and formation of porous GaAs  

SciTech Connect (OSTI)

The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

Schmuki, P.; Vitus, C.M.; Isaacs, H.S. [Brookhaven National Lab., Upton, NY (United States); Fraser, J.; Graham, M.J. [National Research Council of Canada, Ottawa, ON (Canada). Inst. for Microstructural Sciences

1995-12-01T23:59:59.000Z

290

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

291

Best Buys and Unit Pricing  

E-Print Network [OSTI]

This guide explains how to determine a unit price--the cost of an item based on a specific unit such as pound or ounce. Unit pricing can be used to identify foods that are the most economical....

Anding, Jenna

2000-02-02T23:59:59.000Z

292

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; zgr, .; Morko, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

293

Intrinsic Nanoscience of ? PuGa Alloys: Local Structure and Speciation, Collective Behavior, Nanoscale Heterogeneity, and Aging Mechanisms  

Science Journals Connector (OSTI)

Materials Science and Technology Division, Theoretical Division, Health, Safety, Radiation Protection Division, and ?Nuclear Materials Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States ... The EXAFS were calculated as the difference between the full spectra and their smooth atomic backgrounds approximated by an arctangent and Gaussian for the edge and a polynomial spline at higher energies, divided by the atomic absorbance fall off with increasing energy. ... That the Ga environment is only minimally or negligibly affected by aging implies that the aging-induced defects, whether isolated or as novel ordered structures, almost exclusively involve Pu sites and are thus concentrated in Ga-depleted domains in the crystal that must therefore reform if they are lost at some point in the aging process. ...

Steven D. Conradson; Nicolas Bock; Julio M. Castro; Dylan R. Conradson; Lawrence E. Cox; Wojciech Dmowski; David E. Dooley; Takeshi Egami; Francisco J. Espinosa-Faller; Franz J. Freibert; Angel J. Garcia-Adeva; Nancy J. Hess; Erik Holmstrm; Rafael C. Howell; Barbara A. Katz; Jason C. Lashley; Raymond J. Martinez; David P. Moore; Luis A. Morales; J. David Olivas; Ramiro A. Pereyra; Michael Ramos; Jeffrey H. Terry; Phillip M. Villella

2014-03-24T23:59:59.000Z

294

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

will take place at Varentec Inc. (San Jose, CA), Georgia Tech University (Atlanta, GA), Electric Power Research Institute (Knoxville, TN), and Waukesha Electric Systems Inc....

295

Review of Strategies and Technologies for Demand-Side Management on Isolated Mini-Grids  

E-Print Network [OSTI]

Center for Appropriate Technology. Alice Springs, Australia.Report of Intermediate Technology Consultants to Overseasand Communication Technologies and Development. Atlanta, GA.

Harper, Meg

2014-01-01T23:59:59.000Z

296

About the Data in Buildings Performance Database | Department...  

Broader source: Energy.gov (indexed) [DOE]

College* Arlington County, VA* Arvada, CO* Atlanta, GA* Beaverton, OR* Boston, MA* Camas School District, WA* Chicago, IL* Clark County, NV* Cleveland, OH* Columbia, MO*...

297

Home Depot Foundation | Open Energy Information  

Open Energy Info (EERE)

Name: Home Depot Foundation Place: Atlanta, GA Website: http:www.homedepotfoundation References: Home Depot Foundation1 Information About Partnership with NREL Partnership...

298

Standard Method of Test for Integrated Heat Pumps  

Broader source: Energy.gov [DOE]

Lead Performer: Oak Ridge National Laboratory - Oak Ridge, TN Partners: -- ASHRAE - Atlanta, GA -- Air Conditioning, Heating, and Refrigeration Institute (AHRI) - Arlington, VA

299

SR0006  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and technology are on display at the Department of Energy Environmental Management Science Program (EMSP) National Workshop in Atlanta, GA on April 25-27 at the Westin...

300

Early Lessons Learned  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Lessons Learned Deploying a 100Gbps Network Steve Cotter Dept Head, Energy Sciences Network May 4, 2011 Enterprise Innovation Symposium Atlanta, GA Lawrence Berkeley National...

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

NETL F 451.1/1-1, Categorical Exclusion Designation Form  

Broader source: Energy.gov (indexed) [DOE]

Plants Division FY 2013 1012012 - 09302013 Isaac "Andy" Aurelio Atlanta, GA Optimization of Pressurized Oxy-Combustion with Flameless Reactor - Phase I Georgia Tech will...

302

A Survey and Critical Review of the Literature on Indoor Air Quality, Ventilation and Health Symptoms in Schools  

E-Print Network [OSTI]

from the California Healthy Building Study, Phase 1.ASHRAE IAQ 91 Healthy Buildings, Atlanta, GA, ASHRAE, 228-1 of the California Healthy Building Study. Indoor Air, 3:

Daisey, Joan M.

2010-01-01T23:59:59.000Z

303

E-Print Network 3.0 - african-american women participating Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Atlanta, GA African Americans in low-income, urban communities are at high... that low income African Americans living ... Source: Duong, Timothy Q. - Yerkes National Primate...

304

E-Print Network 3.0 - aerosol monitoring Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Dodd Way, Atlanta, GA, 30332, U.S.A. Abstract. Atmospheric aerosols scatter and absorb solar Source: Bergin, Mike - Schools of Civil and Environmental Engineering & Earth and...

305

FY 2014 VEHICLES INCUBATOR DE-FOA-0000988 SELECTION TABLE  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

shell non- intercalation cathodes and anodes Atlanta, GA This project will develop a nano- stuctured core to limit particle volume changes and protect the active material from...

306

E-Print Network 3.0 - animal structures Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

1 Evaluating Animations as Student Aids in Learning Computer Algorithms Michael D. Byrne Psychology... Atlanta, GA 30332-0280 Abstract We conducted two experiments designed to...

307

NETL F 451.1/1-1, Categorical Exclusion Designation Form  

Broader source: Energy.gov (indexed) [DOE]

Alternative Fuel and Advanced Technology Vehicle Project Install compressed natural gas fueling station at 4420 Buford Hwy. Atlanta, GA. Steven Richardson Digitally signed by...

308

The development of integrated chemical microsensors in GaAs  

SciTech Connect (OSTI)

Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

1999-11-01T23:59:59.000Z

309

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network [OSTI]

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

310

The Essentials for GA Water Planning The Relationship  

E-Print Network [OSTI]

Water Plan and the Alabama-Florida-Georgia Water Sharing Dispute (The failure to agree on the two Management F. Conservation & Reuse a. Programs for Water Use Efficiency b. Consumptive Use & Return Flows GThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

311

Does it matter which Life Cycle Assessment (LCA) tool you choose? a comparative assessment of SimaPro and GaBi  

Science Journals Connector (OSTI)

Abstract SimaPro and GaBi are the leading software tools used for life cycle assessments. Assessing product systems applying the exact same unit process foundation would be expected to yield comparable result sets with either tool. The software performances are compared based on a random sample of 100 unit processes. The research question investigated here is; can there be a difference between SimaPro and GaBi influencing the results and the decisions based on them? In many cases the results are identical between SimaPro and GaBi or nearly so, but in other cases the results reveal differences. Some of these differences are so large that they could influence the conclusions. For some of the 100 unit processes, six elementary flows were inventoried differently in SimaPro and GaBi, with an extreme maximum comparative ratio of 109. The implementation of the impact assessment methodologies shows notable differences. For the same life cycle inventory the maximum result ratio for the characterized results is 0.0076 for Terrestrial Ecotoxicity Potential. The observed differences appear to originate primarily from errors in the software databases for both inventory and impact assessment. SimaPro and GaBi are used by many Life Cycle Assessment (LCA) practitioners worldwide as a decision-support tool; if the results of the present analysis are representative of the differences obtained when using either one or the other, then the implications of this paper are worrying. It is clearly in the interest of both software developers and LCA practitioners that the observed differences be addressed, for example through ring tests comparing the tools.

Ivan T. Herrmann; Andreas Moltesen

2014-01-01T23:59:59.000Z

312

Structure of a Si(100)22-Ga surface  

Science Journals Connector (OSTI)

The 22 structure formed on a Ga-adsorbed Si(100) surface is determined using tensor low-energy electron diffraction. I-V curves of the parallel dimer model are in excellent agreement with those of the experiment, indicating that the actual surface has parallel dimer structure. Specific displacements of the topmost two surface layers (the protrusion of the Ga dimer toward the vacuum, the increase of the bond length of the Ga dimer, the stretching of the Si dimer, and the movement of the Si dimer toward the Ga dimer) with the elongation of the Si dimer back bond are observed in the optimized geometry. The Ga-Si bond angle measured from the Si(100) surface plane is recovered with these displacements from that of the ideal geometry where each bond length is assumed to be the sum of Pauling covalent radii. Subsurface layers are also deformed to keep the bond lengths near their bulk values.

H. Sakama; K. Murakami; K. Nishikata; A. Kawazu

1994-11-15T23:59:59.000Z

313

Electronic structure of metallic antiperovskite compound GaCMn3  

Science Journals Connector (OSTI)

We have investigated the electronic structures of antiperovskite GaCMn3 and related Mn compounds SnCMn3, ZnCMn3, and ZnNMn3. In the paramagnetic state of GaCMn3, the Fermi surface nesting feature along the ?R direction is observed, which induces the antiferromagnetic (AFM) spin ordering with the nesting vector Q??R. Calculated susceptibilities confirm the nesting scenario for GaCMn3, and also explain various magnetic structures of other antiperovskite compounds. Through the band folding effect, the AFM phase of GaCMn3 is stabilized. Nearly equal densities of states at the Fermi level in the ferromagnetic and AFM phases of GaCMn3 indicate that two phases are competing in the ground state.

J. H. Shim; S. K. Kwon; B. I. Min

2002-07-10T23:59:59.000Z

314

Second United Nations  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nations Nations . DISCLAIMER This report was prepared a s an account of work sponsored by an agency of the United States Government. Neither t h e United States Government nor any agency thereof, nor any of their employees, make any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof. The views and

315

United States Government  

Broader source: Energy.gov (indexed) [DOE]

.2/06 WED 17:02 FAX 423 241 3897 OIG .2/06 WED 17:02 FAX 423 241 3897 OIG -** HQ . 001 United States Government Department of Energy Department of Energy memorandum DATE: February 9, 2006 Audit Report Number: OAS-L-06-07 REPLY TO ATTN OF; IG-32 (A050R014) SUBJECT: Audit of "The Department's Management of United States Enrichment Corporation Site Services" TO: Manager, Portsmouth/Paducah Project Office INTRODUCTTON AND OBJECTIVE The Paducah Gaseous Diffusion Plant (Paducah), located in western Kentucky, was constructed by the Department of Energy (Department) in the early 1950s to enrich uranium for use in various military and commercial applications. The Department operated the plant until the Energy Policy Act of 1992 created the United States Enrichment Corporation (USEC) as a Government-owned

316

Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers  

Science Journals Connector (OSTI)

In0.135Ga0.865N/GaN pin solar cells are fabricated and investigated with three types of transparent current spreading layers (TCSLs): Ni/Au layer type (Ni/Au-L), Ni/Au grid type (Ni/Au-G), and ITO layer type (I...

X. M. Cai; Y. Wang; Z. D. Li; X. Q. Lv; J. Y. Zhang; L. Y. Ying

2013-05-01T23:59:59.000Z

317

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network [OSTI]

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

318

Surface roughening during depth profiling by Secondary Ion Mass Spectrometry (SIMS) in GaAlAs and GaAs  

Science Journals Connector (OSTI)

During bombardment of Ga1?xAlxAs and GaAs with oxygen we found an abrupt transition to higher sputter rates, change of the useful yield and significant increase of surface roughness at a well defined depth, which...

M. Gericke; T. Lill; M. Trapp; C. -E. Richter

319

GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization  

E-Print Network [OSTI]

radiation hardness than Si, GaAs, CdS and GaN, therefore it should be suitable for space applications. Last novel optoelectronic devices circumventing the problem of p-type doping of ZnO. In such Al devices become reality: the problem of p-type doping of ZnO. So far, there is no way to reliably produce

Wetzel, Christian M.

320

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm GaN-on-Si...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

322

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

323

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network [OSTI]

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

324

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1  

E-Print Network [OSTI]

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1 Jie Lian,2,3 Wei Lu,4 and Lumin Wang1,5,* 1 Department of Materials Science and Engineering, University Arbor, Michigan 48109, USA 3 Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer

Lu, Wei

325

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network [OSTI]

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

326

Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics  

SciTech Connect (OSTI)

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

2002-10-01T23:59:59.000Z

327

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect (OSTI)

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

328

Magnetic-field effects on quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells  

Science Journals Connector (OSTI)

We have used the variational procedure in the effective-mass and nondegenerate parabolic band approximations in order to investigate the effects of a magnetic field on the exciton effective mass and dispersion in semiconductor heterostructures. Calculations are performed for bulk GaAs, and two-dimensional and quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells for applied magnetic fields perpendicular to the layers. A simple hydrogenlike envelope wave function provides the expected behavior for the exciton dispersion in a wide range of the center-of-mass momenta, and an analytical expression for the exciton effective mass is obtained. Present results lead to a magnetic-field dependent exciton effective mass and dispersion in quite good agreement with available experimental measurements in coupled GaAs?(Ga,Al)As quantum wells.

E. Reyes-Gmez, L. E. Oliveira, and M. de Dios-Leyva

2005-01-14T23:59:59.000Z

329

Atlanta, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.7489954°, -84.3879824° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.7489954,"lon":-84.3879824,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

330

United States Department of  

E-Print Network [OSTI]

: For additional copies: U.S. FOREST SERVICE U.S. Forest Service 11 CAMPUS BLVD SUITE 200 Publications Distribution Forest, New Hampshire, began in 1932. One of the studies, still maintained today, consisted of severalUnited States Department of Agriculture Forest Service Northern Research Station Research Paper NRS

331

United States Department of  

E-Print Network [OSTI]

Station at Durham, New Hampshire. The computer program described in this publication was created usingUnited States Department of Agriculture Forest Service Northern Research Station General Technical://www.nrs.fs.fed.us/ Published by: For additional copies: U.S. FOREST SERVICE U.S. Forest Service 11 CAMPUS BLVD SUITE 200

332

United States of Agriculture  

E-Print Network [OSTI]

in wildlife management from the University of New Hampshire in 1988. She joined the Intermountain Research Station in 1993 after working for the States of New Hampshire and Wyoming on projects involving wetlandUnited States Department of Agriculture Forest Service Intermountain Research Station General

333

United States Department of  

E-Print Network [OSTI]

copies: USDA FOREST SERVICE USDA Forest Service 11 CAMPUS BLVD SUITE 200 Publications Distribution at Durham, New Hampshire; JENNIFER C. JENKINS, jjenkins@fs.fed.us, is a research foresterUnited States Department of Agriculture Forest Service Northeastern Research Station General

334

FISHERY STATISTICS UNITED STATES  

E-Print Network [OSTI]

FISHERY STATISTICS OF THE UNITED STATES 1973 STATISTICAL DIGEST NO. 67 Prepared by STATISTICS a review of the fishery statistics for the year 1973 . These statistics include data on the volume and value of landings of fishery products, employment 1n the fish- eries, quantity of gear operated, number

335

FISHERY STATISTICS UNITED STATES  

E-Print Network [OSTI]

FISHERY STATISTICS OF THE UNITED STATES 1971 STATISTICAL DIGEST NO. 65 Prepared by STATISTICS ry statistics for the year 1971 . These statistics include data on the volume and value of landings of fishery products, employment in the fishe ries, quantity of gear operated, number of fishing craft e

336

United States Department of  

E-Print Network [OSTI]

play an important role in a national program for reducing greenhouse gas emissions. The conversion potential through conversion of nonforest land to forest land and through the management of forest lands and sinks in the United States can be identified. International treaties on greenhouse gas reduction require

337

United States Department of  

E-Print Network [OSTI]

as an offset, or for registering carbon dioxide reductions using the U.S. Department of Energy 1605(b. Brown Richard A. Birdsey #12;Visit our homepage at: http://www.nrs.fs.fed.us/ Published by forestry companies and managers of utility company lands, within the United States who are interested

338

United Nations Development Programme  

E-Print Network [OSTI]

United Nations Development Programme Bureau for Development Policy Energy and Atmosphere Programme Development Programme with support from the Government of Norway #12;The views expressed in this volume. #12;5 Acknowledgements 6 Notes on Authors 7 Foreword 9 Executive Summary 27 Introduction: Energy

339

United States Environmental Protection  

E-Print Network [OSTI]

quality in public water systems; remediation of contaminated sites, sediments and ground water; preventionUnited States Environmental Protection Agency Hydrogeologic Framework, Ground-Water Geochemistry/R-02/008 January 2002 Hydrogeologic Framework, Ground-Water Geochemistry, and Assessment of Nitrogen

340

United States Department of  

E-Print Network [OSTI]

Hills National Forest uses such a habitat capability model (HABCAP), but its accuracy is largely unknown, Wildlife Biologist with Black Hills National Forest, Custer, SD 2 South Dakota State UniversityUnited States Department of Agriculture Forest Service Rocky Mountain Forest and Range Experiment

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

United States Department of  

E-Print Network [OSTI]

United States Department of Agriculture Managing Habitats for White-tailed DeerForest Service Rocky Mountain Forest and Range Experiment Station Fort Collins, Colorado 80526 General Technical Report RM-GTR-274 Black Hills and Bear Lodge Mountains of South Dakota and Wyoming Carolyn Hull Sieg and Kieth E

342

United States Department of  

E-Print Network [OSTI]

United States Department of Agriculture Forest Service Pacific Northwest Research Station General.S. Department of Agriculture, Forest Service, Pacific Northwest Research Station. 25 p. Estimates of forest of California's legislatively mandated green- house gas inventory. Reliable estimates of live-tree carbon stores

Fried, Jeremy S.

343

Foreign Obligations Implementation Status Presentation  

National Nuclear Security Administration (NNSA)

January 13, 2004 Crowne Plaza Ravinia Atlanta, January 13, 2004 Crowne Plaza Ravinia Atlanta, January 13, 2004 Crowne Plaza Ravinia Atlanta, Georgia Georgia Obligations Accounting Implementation Workshop Obligations Accounting Implementation Workshop Foreign Obligations Implementation Status Brian G. Horn U.S. Nuclear Regulatory Commission January 13, 2004 Obligations Accounting Implementation Workshop January 13, 2 Obligations Accounting Implementation Workshop January 13, 2004 Crowne Plaza Ravinia Atlanta, GA 004 Crowne Plaza Ravinia Atlanta, GA Overview of Meeting Overview of Meeting * Review how the Obligation Tracking System is working * Presentations: - Review of Government notification procedures - Establishment of the beginning Obligation Balances for sites

344

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets  

SciTech Connect (OSTI)

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Castao, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

2013-11-14T23:59:59.000Z

345

" Million U.S. Housing Units"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Home Appliances Usage Indicators by Type of Housing Unit, 2005" " Million U.S. Housing Units" ,,"Type of Housing Unit" ," Housing Units (millions) ","Single-Family...

346

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

347

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

348

Exciton recombination dynamics in InxGa1-xAs/GaAs quantum wells  

Science Journals Connector (OSTI)

Low-temperature decay times ?PL are reported for a series of InxGa1-xAs/GaAs quantum wells. These show a nearly linear increase with increasing thickness (4?Lz?10 nm, x=0.15) but recombination in the widest well (12 nm) is dominated by nonradiative effects. The decay time increases almost linearly with temperature up to 50 K, as expected for free excitons. An increase in ?PL with increasing In composition (0.05?x?0.25, Lz=8 nm) is also observed. Wells with different In compositions exhibit a similar temperature behavior and there is a weak influence of strain on the decay time. Additional peaks in the photoluminescence spectra occur to the low-energy side of the free-exciton peaks. These features, which exhibit longer decay times, are attributed to excitons localized in In-rich islands arising from indium segregation.

Haiping Yu; Christine Roberts; Ray Murray

1995-07-15T23:59:59.000Z

349

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect (OSTI)

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

350

Photovoltaic properties of GaAs:Be nanowire arrays  

SciTech Connect (OSTI)

Arrays of GaAs:Be nanowires are synthesized by molecular beam epitaxy on GaAs(111)B substrates. Prototypes of photovoltaic converters in which the grown nanowire arrays are used as active layers are produced by means of successive photolithography, etching, and metallization processes. Studying the photovoltaic properties of the fabricated structures using a solar radiation simulator demonstrates that the solarenergy conversion efficiency is about 0.1%. The value of the efficiency recalculated with the area occupied by the p-type nanowires on the surface of the n-type GaAs substrate taken into account amounts to 1.1%.

Bouravleuv, A. D.; Beznasyuk, D. V.; Gilstein, E. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Tchernycheva, M.; Luna Bugallo, A. De; Rigutti, L. [University Paris Sud 11, Institut d'Electronique Fondamentale UMR CNRS 8622 (France); Yu, L. [CNRS, Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique (France); Proskuryakov, Yu. [University of Liverpool, Stephenson Institute for Renewable Energy (United Kingdom); Shtrom, I. V.; Timofeeva, M. A. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Samsonenko, Yu. B.; Khrebtov, A. I.; Cirlin, G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-06-15T23:59:59.000Z

351

Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires  

SciTech Connect (OSTI)

Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

Kim, D. C.; Ahtapodov, L.; Boe, A. B.; Moses, A. F.; Dheeraj, D. L.; Fimland, B. O.; Weman, H. [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway); Choi, J. W.; Ji, H.; Kim, G. T. [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2011-12-23T23:59:59.000Z

352

Effects of Ga ion-beam irradiation on monolayer graphene  

SciTech Connect (OSTI)

The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.

Wang, Quan; Mao, Wei; Zhang, Yanmin; Shao, Ying; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)] [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China) [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-08-12T23:59:59.000Z

353

United States Government  

Broader source: Energy.gov (indexed) [DOE]

uv /uu/u* ±.u.. J.OJ..L rAA , *. . uv /uu/u* ±.u.. J.OJ..L rAA , *. . 'A4 .. ± OO, I U444 flmI I.j102 ' -f- $I)002 EP<.1 (o-.vu) United States Government Department of Energy memorandum DATE: January 30, 2004 REP.YTO: IG-35 (A03DN039) Audit Report No.: OAS-L-04-10 SUBJECT: Audit of the Safeguards and Security Program at the Rocky Flats Environmental Technology Site To: Frazer Lockhart, Manager, Rocky Flats Field Office INTRODUCTION AND OBJECTIVE Because of the terrorist attacks against the United States on September 11, 2001, the Department of Energy (Department) instituted additional security requirements beyond those already in place for normal security operations. These "Security Conditions" requirements were established by Department Notice 473.8 (Notice). The requirements are based on

354

United States Environmental Monitoring  

Office of Legacy Management (LM)

EPA 60014-91/030 EPA 60014-91/030 Environmental Protection Systems Laboratory DOE/DP00539-063 Agency P.O. Box 93478 Las Vegas NV 891 93-3478 Research and Development Offsite Environmental Monitoring Report: 1 - 3 5 Radiation Monitorina Around * / (- P 7 1 United States ~ u c l g a r Test Areas Calendar Year 1990 This page intentionally left blank EPN60014-90 DOWDP Offsite Environmental Monitoring Report: Radiation Monitoring Around United States Nuclear Test Areas, Calendar Year 1990 Contributors: D.J. Chaloud, B.B. Dicey, D.G. Easterly, C.A. Fontana, R.W. Holloway, A.A. Mullen, V.E. Niemann, W.G. Phillips, D.D. Smith, N.R. Sunderland, D.J. Thome, and Nuclear Radiation Assessment Division Prepared for: U.S. Department of Energy under Interagency Agreement Number DE-A108-86-NV10522

355

l UNITED STATES GOVERNMENT  

Office of Legacy Management (LM)

UNITED STATES GOVERNMENT UNITED STATES GOVERNMENT lb 15 SUBJECT: THORFJM PROCURENENT PMF'N:TBU Jesse C. Johnson, Gtnager of IRaw Materials Operations3s.Office 3 R. W. Cook, Director of Production ~',LL:::+ I--- DATE: MAR ! 9 1951 The following list of suppliers of thorium and the amounts of materials procured from them by the Mew York Operations Office during calendar year 1950 is being supplied in accordance with Mr. Spelmanls telephone request of March 19. Thorium Lannett Bleachery iinde Air Products Co. Lindsey Light & Chemical Co. lliscellaneous NY0 Liscensing Division Rare Earths, Inc. Wolff-Alport Total - (kilograms) 179 38,2;2 -3 4,210 /vyeoi 4 -q- 2 : i ' \ iti 1 i 0 ;;\I:' --' I F 10 i;;;?/ \ --' L & ;:I :,- :,j( EZi 5 1 :' -I I ri _ I ' R i; .- . )- .i

356

United States Government  

Broader source: Energy.gov (indexed) [DOE]

ng ng United States Government Department of Energy Memorandum OFFICE OF INSPECTOR GENERAL DATE: APR 18 2003 REPLY TO ATTN OF: IG-34 (A02PR010) Audit Report No.: OAS-L-03-15 SUBJECT: Audit of the Weatherization Assistance Program TO: Director, Weatherization and Intergovernmental Program, EE-2K The purpose of this report is to inform you of the results of our audit of the Weatherization Assistance Program. INTRODUCTION AND OBJECTIVE The Weatherization Assistance Program (Program) was established to increase energy efficiency in dwellings owned or occupied by low-income persons to reduce their residential energy expenditures and improve their health and safety. Since its inception in 1976, the Program has reported that approximately 5 million dwelling units owned or occupied by low-income individuals have been weatherized.

357

United States Government Department  

Broader source: Energy.gov (indexed) [DOE]

OE r 1325.0 OE r 1325.0 (01.93) United States Government Department of memorandum DATE: March 23, 2006 Audit Report Number: OAS-L-06-09 REPLY TO ATTN OF: IG-32 (A060R040) SUBJECT: Audit of"The Department of Energy's Management of the Northeast Home Heating Oil Reserve" TO, Deputy Assistant Secrctary for Petroleum Reserves INTRODUCTION AND OBJECTIVE The Energy Act of 2000 authorized the Secretary of Energy to create a Northeast Home Heating Oil Reserve (Reserve). The Reserve was established as an "emergency buffer" to supplement commercial supplies should a severe supply disruption occur in the heavily heating oil-dependent northeast United States. The Reserve consists of 2 million barrels of emergency home heating oil, enough to provide Northeast consumers adequate supplies for approximately

358

United States Government  

Broader source: Energy.gov (indexed) [DOE]

United States Government United States Government Department of Energy Memorandum DATE: July 29, 2005 REPLY TO ATTN TO: IG-34 (A05HQ002) Audit Report No. OAS-L-05-10 SUBJECT: Agreed-Upon Procedures for Federal Payroll TO: Director, Office of Management, Budget, and Evaluation/Chief Financial Officer, ME-1 INTRODUCTION AND OBJECTIVE The Office of Management and Budget (OMB) Bulletin No. 01-02, "Audit Requirements for Federal Financial Statement," dated October 16, 2000, requires an annual audit of civilian payroll of executive departments and other Government agencies. Auditors are required to follow the agreed-upon procedures in Appendix I-1 of OMB Bulletin No. 01-02, to assess the reasonableness of life insurance, health benefits, and retirement withholdings and contributions.

359

UNITED STATES GOVERNMENT  

Office of Legacy Management (LM)

Menxmmhmz 9 Menxmmhmz 9 1 / UNITED STATES GOVERNMENT i TO : ThcFFles . mx.f I A. B. Piccct, +3lation section : DATE: .@.eti 16, 1949 SUBJECT: VISIT To HAVY OFfDHAlfCE DEPOT, EARIZ, B.J. FmmlTo ,sYmOL: DH:ARP . . : OnJuly 8,&g the uriterattendedameeting at the Navy Oxdnce Depot at Farle, Ii. J. for the purpose of advising the navy on i-adlatlon hazards involved In the dmping of contadnated AEC wastes at /?ea. " Presint were: J. Cook - Traffic & Transportation, AEC ~J.Moren- Utilifation, AEC ..J. Ccnmigl.io - Chief of Middlesex Operaticns A. PIhot -~Hadiation Section, AEC Captain Blossoin - Navy Captain hall - Navy ThefoSkndngwas agreedupcmby AFC andthe l&v. 1. 2. 3. 4. Contaminatedmaterial dnmied, I (loose in case of large contaminated units) loaded on truck&and lsonltored at'

360

Contamination analysis unit  

DOE Patents [OSTI]

The portable Contamination Analysis Unit (CAU) measures trace quantifies of surface contamination in real time. The detector head of the portable contamination analysis unit has an opening with an O-ring seal, one or more vacuum valves and a small mass spectrometer. With the valve closed, the mass spectrometer is evacuated with one or more pumps. The O-ring seal is placed against a surface to be tested and the vacuum valve is opened. Data is collected from the mass spectrometer and a portable computer provides contamination analysis. The CAU can be used to decontaminate and decommission hazardous and radioactive surface by measuring residual hazardous surface contamination, such as tritium and trace organics It provides surface contamination data for research and development applications as well as real-time process control feedback for industrial cleaning operations and can be used to determine the readiness of a surface to accept bonding or coatings.

Gregg, Hugh R. (Livermore, CA); Meltzer, Michael P. (Livermore, CA)

1996-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Contamination analysis unit  

DOE Patents [OSTI]

The portable Contamination Analysis Unit (CAU) measures trace quantities of surface contamination in real time. The detector head of the portable contamination analysis unit has an opening with an O-ring seal, one or more vacuum valves and a small mass spectrometer. With the valve closed, the mass spectrometer is evacuated with one or more pumps. The O-ring seal is placed against a surface to be tested and the vacuum valve is opened. Data is collected from the mass spectrometer and a portable computer provides contamination analysis. The CAU can be used to decontaminate and decommission hazardous and radioactive surfaces by measuring residual hazardous surface contamination, such as tritium and trace organics. It provides surface contamination data for research and development applications as well as real-time process control feedback for industrial cleaning operations and can be used to determine the readiness of a surface to accept bonding or coatings. 1 fig.

Gregg, H.R.; Meltzer, M.P.

1996-05-28T23:59:59.000Z

362

Integrated solar heating unit  

SciTech Connect (OSTI)

This patent describes an integral solar heating unit with an integral solar collector and hot water storage system, the unit comprising: (a) a housing; (b) a flat plate solar collector panel mounted in the housing and having a generally horizontal upper edge and an uninsulated, open back surface; (c) a cylindrical hot water tank operatively connected to the solar collector panel and mounted in the housing generally parallel to and adjacent to the upper edge; (d) the housing comprising a hood around the tank a pair of side skirts extending down at the sides of the panel. The hood and side skirts terminate at lower edges which together substantially define a plane such that upon placing the heating unit on a generally planar surface, the housing substantially encapsulates the collector panel and hot water tank in a substantially enclosed air space; (e) the collector including longitudinally extended U-shaped collector tubes and a glazed window to pass radiation through to the collector tubes, and a first cold water manifold connected to the tubes for delivering fresh water thereto and a second hot water manifold connected to the tubes to remove heated water therefrom. The manifolds are adjacent and at least somewhat above and in direct thermal contact with the tank; and, (f) the skirts and hood lapping around the collector panel, exposing only the glazed window, such that everything else in the heating unit is enclosed by the housing such that heat emanating from the uninsulated, open back face of the collector and tank is captured and retained by the housing to warm the manifolds.

Larkin, W.J.

1987-01-20T23:59:59.000Z

363

Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs  

Science Journals Connector (OSTI)

Electrolyte electroreflectance (EER) experiments were performed on In 0.22 Ga 0.78 As/GaAs single quantum wells grown by the conventional molecular-beam-epitaxy (MBE) shutter operation and also by modified MBE shutter operation intended to form more compositionally abrupt normal and inverted interfaces. The latter included controlled thermal desorption of the surface segregated In at the InGaAs layer surface (flash off) and the deposition of In at the InGaAs/GaAs interface to eliminate compositional broadening (predeposition). The fundamental energy gap and subband transitions were determined experimentally and compared with an accurate calculation of the potential well problem including strain. These results confirmed the segregation of In atoms near the interface. The segregation was maximum in the conventional (normal) MBE sample and least with the modified growth incorporating predeposition and flash off as expected. The segregated atoms are observed to act as dopants and form junctions near the InGaAs/GaAs interface. This study shows that EER can be used as an effective tool for studying the segregation process in MBE growth.

K. Chattopadhyay; J. Aubel; S. Sundaram; J. E. Ehret; R. Kaspi; Keith R. Evans

1997-01-01T23:59:59.000Z

364

Hoechst plans Mexican unit  

SciTech Connect (OSTI)

Hoechst is considering plans to build its first ethoxylates project in Mexico, Mark Sijthoff, head of surfactants and auxiliaries for Hoechst`s specialty chemical business unit, tells CW. The company expects to make a decision on the 30,000-m.t./year project by the end of the year. Sijthoff would not disclose the site or where ethylene oxide (EO) feed would be obtained. The plan may depend on results of the privatization of Petroleos Mexicanos (Pemex), which is the only producer of EO in Mexico. Hoechst is part of a consortium bidding on the privatization. Sources say the unit will be built at Quimica Hoechst`s Coatzacoalcos site, close to Pemex`s EO plants at Cangregera and Morelos. A planned EO expansion at Morelos will probably move ahead when the sell-off is completed. Sijthoff says that Hoechst is also looking at improving its US surfactants position, although the company has no plans to expand ethoxylates, as there is {open_quotes}plenty of capacity.{close_quotes} Hoechst started up a 150-million lbs/year plant at Clear Lake, TX last year, ending a tolling agreement with Union Carbide. In addition, Rhone-Poulenc recently started a unit at Marcus Hook, PA, and Condea Vista is doubling its ethoxylation capacity at Lake Charles, LA. Meanwhile, Hoechst is still considering construction of 30,000-m.t./year ethoxylation plant in India or China. A decision is expected later this year.

Wood, A.; Alperowicz, N.

1996-05-22T23:59:59.000Z

365

The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency  

Science Journals Connector (OSTI)

This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) ... quantum dot effectively enhance the overall power conversion efficiency

Chen-Chen Chung; Binh Tinh Tran; Hau-Vei Han; Yen-Teng Ho

2014-03-01T23:59:59.000Z

366

Improvement of orange ii photobleaching by moderate Ga3+ doping of titania and detrimental effect of structural disorder on Ga overloading  

Science Journals Connector (OSTI)

Highly photoactive Ga3+-doped anatase modification of titania was prepared by homogeneous hydrolysis of aqueous solutions mixture of titanium oxo-sulphate TiOSO4 and gallium(III) nitrate with urea. Incorporation of Ga3+ ...

Vclav tengl, Jil Henych, Michaela Slun, Tom Matys Grygar, Jana Velick, Martin Kormunda

2014-01-01T23:59:59.000Z

367

Kinetics of indirect photoluminescence in GaAs/AlxGa1?x As double quantum wells in a random potential with a large amplitude  

Science Journals Connector (OSTI)

The kinetics of indirect photoluminescence of GaAs/AlxGa1?x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is ...

L. V. Butov; A. V. Mintsev; A. I. Filin

1999-05-01T23:59:59.000Z

368

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect (OSTI)

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

369

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect (OSTI)

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

370

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy  

Science Journals Connector (OSTI)

Time-resolved photoluminescence(TRPL) and positron annihilation measurements as well as Al0.23Ga0.77N/GaN heterostructuregrowth by metalorganic vapor phase epitaxy were carried out on very low defect density polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence(PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L +); i.e. decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L + being 116?nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100?K and levels off at approximately 1.1?ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al0.23Ga0.77N/GaN/Al0.18Ga0.82N/GaN heterostructure are improved by the use of FS-GaN substrates in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Al0.23Ga0.77N/GaN single heterostructuregrown on the c-plane FS-GaN substrate.

S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono

2012-01-01T23:59:59.000Z

371

Polarization charges and polarization-induced barriers in AlxGa1xNGaN and InyGa1yNGaN heterostructures  

E-Print Network [OSTI]

N?GaN heterostructures L. Jia,a) E. T. Yu, D. Keogh, and P. M. Asbeck Department of Electrical and Computer EngineeringGa1 yN surrounded by n-GaN, capacitance­ voltage profiling studies combined with elementary will most likely require further improvements in p-type GaN conduc- tivity and fabrication of low-resistance

Yu, Edward T.

372

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

373

Lattice vibrations of pure and doped GaSe  

SciTech Connect (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

374

GaAs solar cells close to the thermodynamic limit  

Science Journals Connector (OSTI)

The efficiency of GaAs solar cells can be increased by applying angularly selective filters. It is shown in terms of detailed balance model, why this happens and the concept is proven...

Hoehn, Oliver; Kraus, Tobias; Bauhuis, Gerard; Schwarz, Ulrich T; Blsi, Benedikt

375

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network [OSTI]

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

376

Modeling of InGaN/Si tandem solar cells  

Science Journals Connector (OSTI)

We investigate theoretically the characteristics of monolithic InGaN/Si two-junction series-connected solar cells using the air mass 1.5 global irradiance spectrum. The addition of an InGaN junction is found to produce significant increases in the energy conversion efficiency of the solar cell over that of one-junction Si cells. Even when Si is not of high quality such two-junction cells could achieve efficiencies high enough to be practically feasible. We also show that further though smaller improvements of the efficiency can be achieved by adding another junction to form an InGaN/InGaN/Si three-junction cell.

L. Hsu; W. Walukiewicz

2008-01-01T23:59:59.000Z

377

Exciton front propagation in photoexcited GaAs quantum wells  

E-Print Network [OSTI]

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton ...

Yang, Sen

378

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

379

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy  

SciTech Connect (OSTI)

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 10{sup ?5} cm{sup ?1}, and the length of SFs is less than 15 nm.

Shao, Jiayi; Malis, Oana [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, Dmitri N. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)] [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Edmunds, Colin [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)] [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 49707 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 49707 (United States)

2013-12-02T23:59:59.000Z

380

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy  

Science Journals Connector (OSTI)

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular- ... (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as ... back surface field la...

Shulong Lu; Lian Ji; Wei He; Pan Dai; Hui Yang

2011-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect (OSTI)

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

382

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

383

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network [OSTI]

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

384

Decommissioning Unit Cost Data  

SciTech Connect (OSTI)

The Rocky Flats Closure Site (Site) is in the process of stabilizing residual nuclear materials, decommissioning nuclear facilities, and remediating environmental media. A number of contaminated facilities have been decommissioned, including one building, Building 779, that contained gloveboxes used for plutonium process development but did little actual plutonium processing. The actual costs incurred to decommission this facility formed much of the basis or standards used to estimate the decommissioning of the remaining plutonium-processing buildings. Recent decommissioning activities in the first actual production facility, Building 771, implemented a number of process and procedural improvements. These include methods for handling plutonium contaminated equipment, including size reduction, decontamination, and waste packaging, as well as management improvements to streamline planning and work control. These improvements resulted in a safer working environment and reduced project cost, as demonstrated in the overall project efficiency. The topic of this paper is the analysis of how this improved efficiency is reflected in recent unit costs for activities specific to the decommissioning of plutonium facilities. This analysis will allow the Site to quantify the impacts on future Rocky Flats decommissioning activities, and to develop data for planning and cost estimating the decommissioning of future facilities. The paper discusses the methods used to collect and arrange the project data from the individual work areas within Building 771. Regression and data correlation techniques were used to quantify values for different types of decommissioning activities. The discussion includes the approach to identify and allocate overall project support, waste management, and Site support costs based on the overall Site and project costs to provide a ''burdened'' unit cost. The paper ultimately provides a unit cost basis that can be used to support cost estimates for decommissioning at other facilities with similar equipment and labor costs. It also provides techniques for extracting information from limited data using extrapolation and interpolation techniques.

Sanford, P. C.; Stevens, J. L.; Brandt, R.

2002-02-26T23:59:59.000Z

385

Energy Management in Olefins Units  

E-Print Network [OSTI]

to the point where waste heat from pyrolysis generates more than enough steam to power the olefins unit recovery section. Furthermore, incorporating gas turbine driven electrical generators or process compressors adds to the utility export potential of the unit...

Wells, T. A.

1982-01-01T23:59:59.000Z

386

United States Science Offices Abroad  

Science Journals Connector (OSTI)

... PLANS for United States Science ...Offices at A home and abroad are proposed in the extensive report entitled " ...

C. E. SUNDERLIN

1950-07-15T23:59:59.000Z

387

Electronic properties of the Ga vacancy in GaP(110) surfaces determined by scanning tunneling microscopy  

Science Journals Connector (OSTI)

The electronic properties of uncharged Ga monovacancies in GaP(110) surfaces are determined from voltage-dependent scanning tunneling microscopy images. The signatures of localized defect states in the band gap are analyzed and their spatial location is determined. Empty and occupied defect states exist. Depressed dangling bonds in the occupied-state images indicate an inward relaxation of the neighboring P atoms. The results agree with recent theoretical work.

Ph. Ebert and K. Urban

1998-07-15T23:59:59.000Z

388

Microscopic identification of the compensation mechanisms in Si-doped GaAs  

Science Journals Connector (OSTI)

The compensation mechanisms of SiGa donors in GaAs are determined by scanning tunneling microscopy. With increasing Si concentration the SiGa donors are consecutively electrically deactivated by SiAs acceptors, Si clusters, and SiGa-Ga-vacancy complexes. A microscopic model based on the screened Coulomb interaction between charged dopants, the amphoteric nature of Si, and the Fermi-level effect is proposed. It explains the observed defects, the critical Si concentrations of each identified mechanism, and predicts the solubility limit of Si in GaAs. 1996 The American Physical Society.

C. Domke, Ph. Ebert, M. Heinrich, and K. Urban

1996-10-15T23:59:59.000Z

389

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network [OSTI]

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

390

United States Government Memorandum  

Broader source: Energy.gov (indexed) [DOE]

Department of Energy Department of Energy United States Government Memorandum DATE: March 21, 2008 Audit Report Number: OAS-L-08-08 REPLY TO ATTN OF: IG-321 (A07LV042) SUBJECT: Audit Report on "Accountability of Sensitive and High Risk Property at the Nevada Site Office" TO: Acting Manager, Nevada Site Office INTRODUCTION AND OBJECTIVE and control over sensitive and high risk property because of the vulnerability to loss, theft or misuse and its potential impact on national security interests or proliferation concerns. Items such as portable and desktop computers, ammunition. and firearms are examples of sensitive property. In addition, federal regulations require that Departmental organizations and designated contractors account for and control govemroent-owned high risk property, such as body armor and gas masks,

391

United States Government DATE:  

Office of Legacy Management (LM)

5oE(E;,8 ' 0 H .2+ L-1 5oE(E;,8 ' 0 H .2+ L-1 United States Government DATE: MAR 0 8 1994 REPLY TO AlTN OF: EM-421 (W. A. Williams, 903-8149) SUBJECT: Authority Determination -- Former Herring-Hall-Marvin Safe Co., Hamilton, Ohio TO: The File The attached review documents the basis for determining whether the Department of Energy (DOE) has authority for taking remedial action at the former Herring-Hall-Marvin Safe Co. facility in Hamilton, Ohio, under the Formerly Utilized Sites Remedial Action Program (FUSRAP). The facility was used for the shaping and machining of uranium metal by the Manhattan Engineer District (MED) during the Second World War. The following factors are significant in reaching a decision and are discussed in more detail in the attached authority review:

392

United States Government  

Office of Legacy Management (LM)

D;il$;,8 p! A . I I& - ' D;il$;,8 p! A . I I& - ' z United States Government &mtrne&' of Energy DATE: &uG 3, 9 394 REPLY TO AITN OF: EH-421 (W. A. Williams, 427-1719) SUBJECT: Elimination of the Sites from the Formerly Utilized Sites Remedial Action Program To' The File In 1990, with the assistance of Mr. Doug Toukay and Ms. Michelle Landis, I reviewed a number of sites that had formerly provided goods and/or services to the Fernald facility as subcontractors. For 24 of.these sites, recommdations were made to eliminate them from further consideration under Formerly Utilized Sites Remedial Action Program (FUSRAP). In each case, I made or reviewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more formal record of the decision on these sites and to ratify and confirm the

393

Unite2 States Government  

Office of Legacy Management (LM)

+39J +39J t% (3740~ - Unite2 States Government m e m o randuin L3 DATE: AU6 3, 9 %g4 REPLY TO All-N OF: m -421 (U. A. W illiams, 427-1719) -. - >' SUBJECT: Elimination of the Sites from the Formerly Utilized Sites Remedial Action Program To' The File In 1990, with the assistance of Hr. Doug Toukay and Ms. M ichelle Landis, I reviewed a number of sites that had formerly provided goods and/or services to the Fernald facility as subcontractors. For 24 of.these sites, recouwndations were made to eliminate them from further consideration under Formerly Utilized Sites Remedial Action Program (FUSRAP). In each case, I made or reviewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more formal record of the decision on these sites and to ratify and confirm the

394

United States Government  

Broader source: Energy.gov (indexed) [DOE]

LICE F 137: r.e Electr LICE F 137: r.e Electr onic Form App roved by CllR - 1010fJI2002 i/JI~~I United States Government Department of Energy Bonneville Power Admi istration memorandum DATE : REPLY TO AnN OF : KEPR-4 SUBJECT: Environmental Clearance Memorandum TO: Stephen Duncan Project Manager - TERS-3 Proposed Action: Removal of de-stabilized and downed trees resulting from a December 200 8 wind storm on the de-energized Lyons Ultra High Voltage Test Line NO.1. PP&A Project No.: PP&A 1309 Budget Information: Work Order # 184006 Categorical Exclusion Applied (from Subpart 0, 10 C.F.R. Part 1021): B 1.3 Routine maintenance/custodial services for buildings, structures, infrastructures, equipment. Location: Fee-owned ROW on the de-energized Lyons UHV Te st Line No .1 to the south of

395

United States Government Department  

Broader source: Energy.gov (indexed) [DOE]

B.89) B.89) EFO (07-90) United States Government Department of Energ Memorandum SEP 24 20t DATE: REPLY TO: IG-34 (A04TG032) Audit Report No.: OAS-L-04-21 SUBJECT: Evaluation of "The Federal Energy Regulatory Commission's Cyber Security Program - 2004" TO: Chairman, Federal Energy Regulatory Commission The purpose of this report is to inform you of the results of our annual evaluation of the Federal Energy Regulatory Commission's unclassified cyber security program. This evaluation was initiated in June 2004 and our field work was conducted through September 2004. The evaluation methodology is described in the attachment to this report. Introduction and Objective The Commission's increasing reliance on information technology (IT) is consistent with satisfying the President's Management Agenda initiative of expanding electronic

396

United States Government  

Broader source: Energy.gov (indexed) [DOE]

/18/04 THU 11:31 FAX 423 241 3897 OIG -- /18/04 THU 11:31 FAX 423 241 3897 OIG -- + HQ 1002 DOE F 1325.8 (08-93) United States Government Department of Energy Memorandum DATE: March 17, 2004 Audit Report No. OAS-L-04-1 1 REPLY TO IG-36 (A04DN003) ATTN OF: SUBJECT; Audit of "Requests for Equitable Adjustment at the Rocky Flats Environmental Technology Site" TO: Frazer R. Lockhart, Manager, Rocky Flats Project Office INTRODUCTION AND OBJECTIVE Effective February 1, 2000, the Department of Energy's (Department) Rocky Flats Project Office (RFPO) and Kaiser-Hill Co., LLC (Kaiser-Hill), entered into a cost- plus-incentive-fee contract to close the Rocky Flats Environmental Technology Site (Rocky Flats) by December 15, 2006. Under the contract terms, Kaiser-Hlill's final incentive fee earned will be based on how well it meets established cost targets. For

397

United States Government  

Broader source: Energy.gov (indexed) [DOE]

. . . .... ...... ..... .. . .. . . .. . , . . . . ..- - --. -- -. , . . DOEF 1325,8 (08.93) United States Government Department of Energy memorandum DATE: August 13, 2007 1 Audit Report Number: OAS-L-07-21 REPLY TO ATTN OF: IG-32 (A06PR047) SUBJECT: Audit of Executive Compensation at Selected National Nuclear Security Administration Sites TO: Director, Policy and Internal Controls Management, NA-66 INTRODUCTION AND OBJECTIVE As part of a Department of Energy-wide audit of executive compensation, we reviewed fourN* Lti nai-.AL 4 ... :.. ,._*i Amiinistration (NiNSA)SsitCe. Speuiiiu-~l we reviewed executive cormpeisation costs incurred and claimed for Fiscal Years 2003, 2004, and 2005 at Los Alamos National Laboratory (LANL), Lawrence Livermore National Laboratory (LLNL), Sandia National Laboratories, and the Y-12

398

United States Government  

Office of Legacy Management (LM)

. v-w. . v-w. ' ;H; (07.901 United States Government 0' ; Td 2, <.<~ Department of Energy ' m e m o randum DATE: REPLY TO Al-TN OF: EM-421 (W. A. W illiams, 903-8149) SUBJECT: Authorization for Remedial Action at Alba Craft Laboratory in Oxford, Ohio L. Price, OR TO: The former Alba Craft Laboratory site at lo-14 West Rose Avenue, Oxford, Ohio, is designated for remedial action under the Formerly Utilized Sites Remedial Action Program (FUSRAP). Dr. and M rs. Gilbert Pacey, of Oxford, Ohio, own the site. This designation is based on the results of a radiological survey and conclusions from an authority review as noted in the attached Designation Summary. Copies of the radiological survey letter report and the authority review are provided for your information.

399

UNITED STATES GOVERKMENT  

Office of Legacy Management (LM)

Ojice Memornndz~nz 0 Ojice Memornndz~nz 0 UNITED STATES GOVERKMENT By application dated ;!ay 11, 1959, as a~zen:ii:d Hay 25, 1959, the a--T+- I-r-- cant requests that its license SW-33 be amend,ed to authorizt? proced- ures for t>e CCLl-ect conversion of LT6 to '3$ and by applicaticn datzci June 29, 1959, a.3 n:odifizd July 15, 1059, the shipment of uranium rdioxide pellets. Based on our rexiew of the information finished by the applicant, it is hereby determined that the applicant is qualified, by training and experience, to use special nuclear material for the pwpose requested and that the ap@icant's procedures, facilities and equip- ment are adequate to protect health and minimize danger to life and property. It is, therefore, determined that ~NM-33 may be amended to

400

United States Government  

Office of Legacy Management (LM)

ocy F 1325.8 ocy F 1325.8 rcro1 . 6Fo0?-001 w 2 3-q United States Government Department of Energ) ~mc DATE: AUG 3,9 1994 y$Jf EH-421 (W. A. Yllliams, 427-1719) MA. \tQ SUBJECT: _ Elirinrtion of the Sites froa the Formerly Utilized Sites Remedial Action Program TQ The File In 1990, with the assistance of Hr. Doug Tonkay and Hr. Nlchelle Landis, I reviewed a number of sites that had fomerly provided goods and/or services to the Fernald facility as subcontractors. For 24 of.these sites, recomendations were made to eliminate them from further consideration under Forwrly Utilized Sites Remedial A&Ion Program (FUSRAP). In each case, I made or reviewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more formal record of the decision on these sites l hd to ratify and confim the

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

United States Government  

Broader source: Energy.gov (indexed) [DOE]

:)£ F 13 :)£ F 13 ;' 5 H e Etectroou: Form Approved by CGJR - 01120195 (n·/w! United States Government Department of Energy Bonneville Power Administration memorandum DATE: 0 I. 7 20D 9 REPLY TO AnN OF: KEP-4 SUBJECT: Environmental Clearance Memorandum TO : Robert Macy Project Manager - TELF-TPP-3 Proposed Action: Perform routine access road maintenance to the Rockdale Microwave site . Budget Information: Work Order #180709 PP&A Project No.: 1389 Categorical Exclusions Applied (from Subpart D, 10 C.F.R. Part 1021): B1.3, Routine maintenance activities .. .for structures, rights-of-way, infrastructures such as roads, equipment. .. routine maintenance activities, corrective .... are required to maintain ... infrastructures . ..in a condition suitable for a facility to be used for its designed purpose.

402

United States Government  

Broader source: Energy.gov (indexed) [DOE]

DOE:F 1325.8 7 DOE:F 1325.8 7 (08-93) United States Government Department of Energy memorandum DATE: April 10, 2006 REPLY TO ATTN OF: IG-32 (A05AL045) Audit Report Number: OAS-L-06-12 SUBJECT: Audit of Sandia National Laboratories' Safeguards and Security Path Forward Management Plan TO: Associate Administrator for Defense Nuclear Security INTRODUCTION AND OBJECTIVE From 2001 to 2003, approximately 500 security-related findings and observations were identified at Sandia National Laboratories (Sandia) by the Department of Energy's Office of Independent Oversight and Performance Assurance (OA), the National Nuclear Security Administration's (NNSA) Sandia Site Office (SSO), and Sandia's self assessments. Sandia senior management acknowledged the significance of the numerous findings and, in

403

United States Government Memorandum  

Broader source: Energy.gov (indexed) [DOE]

Department of Energy United States Government Memorandum DATE: January 26, 2007 Audit Report Number: OAS-L-07-05 REPLY TO ATTN OF: IG-34 (A06GT035) SUBJECT: Report on "The Department of Energy's Implementation of Revised OMB Circular No. A-123" TO: Acting Chief Financial Officer, CF-1 INTRODUCTION AND OBJECTIVE The Office of Management arid Budget's (OMB) revised Circular No. A-123 (Circular) requires Federal agencies to assess the adequacy of their internal controls. Beginning in Fiscal Year (FY) 2006, the Circular requires agencies to strengthen their assessment, documentation and testing of internal controls over financial reporting and prepare an annual assurance statement on the operating effectiveness of those controls. In August 2005, the Department of Energy's

404

United States Government  

Broader source: Energy.gov (indexed) [DOE]

4 DOE F 1325.8 (08-93) United States Government Department of Energy memorandum DATE: April 23, 2004 Audit Report Number: OAS-L-04-16 REPLY TO ATTN OF: IG-35 (A04YT023) SUBJECT: Audit Report on "Modernization Activities at the Y-12 National Security Complex" TO: Richard Speidel, Director, Policy and Internal Controls Management, NA-66 INTRODUCTION AND OBJECTIVE As part of the National Nuclear Security Administration's (NNSA) nuclear weapons complex, the Y-12 National Security Complex (Y-12) performs critical roles in strengthening national security and reducing the global threat from weapons of mass destruction. The Y-12 modernization plan (plan) seeks to foster the development of a physical plant that is efficient and effective in serving its national security missions. The

405

. United States Government  

Office of Legacy Management (LM)

,:n5.5.8 ,:n5.5.8 ,849, EfG pw, . United States Government DATE: AUG 2 i994 y#J;; EM-421 (W. A. Williams, 427-1719) sUBJECT: -Elimination of the Robbins & Myers Site, Springfield, Ohio 11179 I The File TO: I have reviewed the attached elimination recommendation and the original historical records for the Myers & Robbins facility in Springfield, Ohio. I have determined that there is little likelihood of radioactive contamination at these sites. The only record of activity at this site by Department of Energy predecessors is an equipment test of a pump in March 1975. This test involved limited amounts of radioactive materials and there was a serious effort to decontaminate the equipment at the conclusion of the tests. Based on the above, the Myers & Robbins site in Springfield, Ohio, is

406

United States Government  

Office of Legacy Management (LM)

DOE F 1325.8 DOE F 1325.8 E&M&& +\A .wz United States Government Department of Energy DATE: RUG 3, 9 %g4 y;;;; EM-421 (W. A. W illiaas, 427-1719) "; :+ 1 SUBJECT: Elimination of the Sites from the Formerly Utilized Sites Remedial Action Program To' The File In 1990, with the assistance of M r. Doug Tohkay and Ms. M ichelle Landis, I reviewed a number of sites that had formerly provided goods and/or services to the Fernald facility as subcontractors. For 24 of.these sites, recomendations were made to eliminate then from further consideration under Formerly Utilized Sites Remedial Action Program (FUSRAP). In each case, I made or reviewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more formal record of the decision on these sites and to ratify and confirm the

407

Uniter+ States Government  

Office of Legacy Management (LM)

EFG (07-90) EFG (07-90) Uniter+ States Government ~L.aQ-i; Department of Energy inemorandum DATE: SEP 2 5 1992 REPLY TO Al-fN OF: EM-421 (W. A. W illiams, 903-8149) SUBJECT: Authorization for Remedial Action at the Former Dow Chemical Company Facility in M a d ison, Illinois TO: L. Price, OR The site of the Former Dow Chemical Company in M a d ison, Illinois, which is currently owned and operated by the Spectrulite Consortium, is designated for inclusion in the Formerly Utilized Sites Remedial Action Program (FUSRAP). This designation is based upon the results of a preliminary radiological survey and other information described in the attached Designation Summary. The authority determination and preliminary survey report also are attached for information. The site has been assigned a low priority under the FUSRAP protocol, as

408

United States Government  

Office of Legacy Management (LM)

# Xx i' # Xx i' !325 8 I c&egJw, i&l d, 4 -1 United States Government Department of Energy DATE; AUG 3, 9 !gg4 I REPLYTo m-421 (W. A. Williams, 427-1719) sy I AlTN OF: SUBJECT: Elimination of the Sites from the Formerly Utilized Sites Remedial Action Program To' The File In 1990, with the assistance of Mr. Doug Tonkay and Ms. Nichelle Landis, I reviewed a number of sites that had formerly provided goods a&/or services to the Fernald facility as subcontractors. For 24 of these sites, recoumendations were made to eliminate them from further consideration under Formerly Utilized Sites Remedial Action Program (FUSRAP). In each case, I made or reviewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more

409

United States Government  

Office of Legacy Management (LM)

EFS (07-W EFS (07-W United States Government memorandukn Department of Energy j ; I.-- ' -i;: /J DATE: j.gjG 2 9 1994 REPLY TO En-421 (W. A. Williams, 427-1719) AlTN OF: h p)\;--/ ;,;' J ( SUBJECT: Elimination of the Sites from the Formerly Utilized Sites Remedial Action Program To' The File In 1990, with the assistance of Ur. Doug Tonkay and Us. Michelle Landis, I reviewed a number of sites that had formerly provided goods and/or services to the Fernald facility as subcontractors. For 24 of.these sites, recoPraendations were made to eliminate them from further consideration under Formerly Utilized Sites Remedial Action Program (FUSRAP). In each case, I made or reviewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more

410

United States Government  

Broader source: Energy.gov (indexed) [DOE]

nUnited States Government Department of Energy Bonneville Power Administration memorandum REPLY TO AnN OF: KEP-4 SUBJECT: Environmental Clearance Memorandum TO: Robert Macy Project Manager - TELF-TPP-3 Proposed Action: Access road improvement and bridge replacement for the Raver-Paul No. transmission line structure 18/1. Budget Information: Work Order # 00220048 PP&A Project No.: 954 Proposed by: Bonneville Power Administration (BPA) Categorical Exclusion Applied (from Subpart D, 10 C.F.R. Part 1021): B1.3, Routine maintenance activities .. .for structures, rights-of-way, infrastructures such as roads, equipment. .. routine maintenance activities, corrective ....are required to

411

United States Government Memorandum  

Broader source: Energy.gov (indexed) [DOE]

8/16/07 09:15 FAX 301 903 4656 CAPITAL REGION 8/16/07 09:15 FAX 301 903 4656 CAPITAL REGION * 002 DOE F 1325.8 (08-93) Department of Energy United States Government Memorandum DATE: August 15, 2007 Audit Report Number: OAS-L-07-22 REPLY TO ATTN OF: IG-34 (A06GT006) SUBJECT: Report on "Hazardous Chemicals Inventory Management at the Savannah River Site" TO: Manager, Savannah River Operations Office BACKGROUND The Savannah River Site (Savannah River) maintains large inventories of hazardous chemicals for its scientific, environmental cleanup and production operations. Many of these chemicals are known carcinogens; some are corrosive, while others are highly flammable. As such, these chemicals can pose serious health and safety risks to workers and members of the public, the environment, and to emergency first responders if not properly managed and controlled.

412

,. United States Government  

Broader source: Energy.gov (indexed) [DOE]

i. 001 i. 001 DOE F 1325.8 (8-89) EFG (07-90) ,. United States Government Department of Energy memorandum DATE: September 11, 2003 REPLYTO: IG-34 (A03NE045) Audit Report No.: OAS-L-03-20 SUBJECT: Audit of Procurement Administration at the Oak Ridge National Laboratory TO: Director, Office of Management, Budget and Evaluation/Chief Financial Officer, ME-1 The purpose of this report is to inform you of the results of our survey of procurement administration at the Oak Ridge National Laboratory (Laboratory). This review was initiated in May 2003 and fieldwork was conducted through August 2003. Our review methodology is described in an attachment to this report. INTRODUCTION AND OBJECTIVE In Fiscal Year (FY) 2002, the Department of Energy's (Department) management contractors procured approximately $6.4 billion worth of goods and services from

413

United States Government  

Broader source: Energy.gov (indexed) [DOE]

31/07 THU 18:20 FAX 865 241 3897 OIG --- HQ 31/07 THU 18:20 FAX 865 241 3897 OIG --- HQ 00 DOE F 1325.8 (08&93) United States Government Department of Energy memorandum DATE: May 31, 2007 Audit Report Number: OAS-L-07-13 REPLY TO ATTN OF: IG-32 (A07RL048) SUBJECT: Audit of Safety Allegations Related to the Waste Treatment Plant at the Hanford Site TO: Manager, Office of River Protection INTRODUCTION AND OBJECTIVE The Department of Energy's (Department) Hanford Site is responsible for treating and preparing 53 million gallons of radioactive and chemically hazardous waste for disposal. Bechtel National, Inc. (Bechtel) is designing, building and commissioning the Waste Treatment Plant (Plant), a category II nuclear facility, which is comprised of a complex of treatment facilities to vitrify and immobilize radioactive waste into a

414

United States Government  

Broader source: Energy.gov (indexed) [DOE]

OEF 1325.8 OEF 1325.8 (U8-93) United States Government Department of Energy memorandum DATE: April 11, 2007 Audit Report Number: OAS-L-07-I1 REPLY TO ATTN OF: IG-32 (A07DN056) SUSJECT: Audit of the Department of Energy's Community and Regulatory Support Funding at the Richland Operations Office TO: Manager, Richland Operations Office INTRODUCTION AND OBJECTIVE The Department of Energy's (Department) Office of Environmental Management provided $60.1 million in Community and Regulatory Support funding in Fiscal Year (FY) 2005 to a number of Departm- nt sites. The funding is intended to be used for activities indirectly related to nuclear and hazardous waste cleanup, such as agreements with state regulatory agencies and transportation departments. During FY 2005, the Department's Richland

415

United States Government  

Broader source: Energy.gov (indexed) [DOE]

a . a . r-z . "*& ., . .. uoi UA o. --.- flI gj UUX DOE F 1325.8 (08.93) United States Government Department of Ene memorandum DATE: August 19, 2004 Audit Report Number: OAS-L-04-18 REPLY TO ATTN OF: IG-36 (A03IF009) SUBJECT: Audit of the "Revised Pit 9 Cleanup Project at the Idaho National Engineering and Environmental Laboratory" TO: Paul Golan, Acting Assistant Secretary, Office of Environmental Management INTRODUCTION AND OBJECTIVE The Idaho National Engineering and Environmental Laboratory's (iNEEL) subsurface disposal area was established in 1952 for disposal of solid radioactive waste and now encompasses an area of approximately 88 acres. Wastes from the INEEL and other Department of Energy (Department) sites, rmost notably Rocky Flats, were buried in

416

United States Government  

Broader source: Energy.gov (indexed) [DOE]

vu & . vu & . ,I / v a L U ; .8 " ',X v &..'*. "o uu V"x Ijo tf J ,*- , , i 4 w i tiJ U U 1 OEF S.a 135 (0B93) United States Government - Department of Energy memorandum DATE: February 27, 2007 REPLY TO Audit Repor Number: OAS-L-07-08 ATTN OF: IG-32 (A06ID015) SUBJECT: Audit of the "Design of the Engineered Barrier System at the Yucca Mountain Site" TO: Principal Deputy Director, Office of Civilian Radioactive Waste Management INTRODUCTION AND OBJECTrVE In accordance with the Nuclear Waste Policy Act of 1982, the Department of Energy's (Department) Office of Civilian Radioactive Waste Management (OCRWM) is responsible for designing, licensing, constructing, and operating a repository, known as Yucca Mountain, for the permanent disposal of spent nuclear fuel and high-level -

417

United States Government  

Broader source: Energy.gov (indexed) [DOE]

F 1325.8 F 1325.8 (08-93) United States Government Department of Energy memorandum DATE: August 13, 2007 . . Audit Report Number: OAS-L-07-18 REPLY TO ATTN OF: IG-32 (A07PR061) SUBJECT: Audit of Executive Compensation at Brookhaven National Laboratory TO: Manager, Brookhaven Site Office INTRODUCTION AND OBJECTIVE As part of a Department of Energy-wide audit of executive compensation, we reviewed executive compensation at the Office of Science's Brookhaven National La --- _ .r . . tc. av .... n . Ou audit covered executive cuupoci'A ;is in curred and claimed for Fiscal Years 2003, 2004, and 2005. Brookhaven Science Associates, LLC, operated Brookhaven under Department of Energy (Department) contract number DE-AC02-98CH10886. The amount of executive compensation that can be reimbursed to Department

418

United States Government  

Broader source: Energy.gov (indexed) [DOE]

')/06 MON 14:28 FAX 423 241 3897 OIG ')/06 MON 14:28 FAX 423 241 3897 OIG --- HQ 1o001 ,O " F 1325.8 (08-93) United States Government Department of Energy memorandum DATE: April 10, 2006 Audit Report No.: OAS-L-06-11 REPLY TO ATTN OF: IG-32 (A05ID043) SUBJECT: Audit of "Contract Transition Activities at the Idaho Operations Office" TO: Manager, Idaho Operations Office INTRODUCTION AND OBJECTIVE The Department of Energy's Idaho Operations Office has ongoing missions focused primarily in the areas of nuclear energy and environmental cleanup. From October 1, 1999 to February 1, 2005, Bechtel BWXT Idaho, LLC (Bechtel) managed facility operations for both of these missions. In Fiscal Year 2005, two separate contracts began in order to add focus and clarity to each respective mission. First, the Idaho National

419

United States Government  

Broader source: Energy.gov (indexed) [DOE]

-93) -93) United States Government Department of Energy memorandum DATE: July 12, 2007 Audit Report Number: OAS-L-07-15 REPLY TO ATnN OF: IG-32 (A07ID055) SUBJECr: Audit of the Idaho National Laboratory Facility Footprint Reduction TO: Manager, Idaho Operations Office INTRODUCTION AND OBJECTTVE On February 1, 2005, Battelle Energy Alliance, LLC (BEA) assumed responsibility for managing and operating the Idaho National Laboratory (INL) for the Department of Energy (Department) under a new 10 year contract. ThI m.ion for ,the L s to nntance the Nation's energy security by becoming the preeminent, internationally recognized nuclear energy research, development, and demonstration laboratory.. To accomplish this mission, BEA proposed aggressive infrastructure initiatives

420

United States Government Departmen  

Broader source: Energy.gov (indexed) [DOE]

7/05 TUE 07:58 FAX 423 241 3897 OIG -** HQ @]002 7/05 TUE 07:58 FAX 423 241 3897 OIG -** HQ @]002 DOE F 1325.8 (08-93) United States Government Departmen of Energy memorandum DATE: December 20, 2005 Audit Report Number: OAS-L-06-03 REPLY TO A1TN OF; IG-36 (A05SR025) SUBJECT: Audit of "Defense Waste Processing Facility Operations at the Savannah River Site" TO: Jeffrey M. Allison, Manager, Savannah River Operations Office INTRODUCTION AND OBJECTIVE The Department of Energy's (Department) Savannah River Site stores approximately 36 million gallons of liquid, high-level radioactive waste in 49 underground waste storage tanks. The contents of the waste tanks are broadly characterized as either "sludge waste" or "salt waste". Sludge waste is insoluble and settles to the bottom of a waste tank, beneath a layer of liquid supernate. Salt

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

* United States Government  

Office of Legacy Management (LM)

-- -- DE;$r,e /q f-j * I3 - I * United States Government memorandum MAY 21 I991 DATE: REPLY TO Al-fN OF: 4ih55YhL Department of Energy JT:,i 5, f&A 0 ' - j4.~, ' -/ jl.a' \ A t -3 __..-_-. EM-421 SUBJECT: Elimination of the American Potash and Chemical Site The File TO: I have reviewed the attached site summary and elimination recommendation for the American Potash and Chemical Company Site in West Hanover, Massachusetts. I have determined that there is little likelihood of radioactive contamination at this site. Based on the above, the American Potash and Chemical Company site is hereby eliminated from further consideration under the Formerly Utilized Sites Remedial Action Program. W. Alexander Williams, PhD Designation and Certification Manager

422

United States Goveinment  

Office of Legacy Management (LM)

,325.B ,325.B jO8.93) United States Goveinment ~~~rntir-andu~rvi Depr?rtnient of Energy \L, IO' " 1' !ATE:' MAY i o 1995 ,' Kzb9. ":cz$ EM-421 (W.,A. Williams, 301-903-8149) SUBJECT: Records for the West Chicago Site .The File TO: After review.of the available r&rds concerning the former 'Lindsay Light and Chemical.Corhpany site in West Chicago, Illinois. I have determined that it is not necessary to transmit Department of Energy (DOE) records to the municipa,llty to inform public officials of the activities at this ~ site. This site has been licgnsed by the Nuclear Regulatory Commission (NRC) for many.years, and the nature of the. rare'earth and thorium production at the site, are well known. Remediation of this faci'lity ii~ being addressed by the current owner, 'the NRC, the U.S; Environmental

423

; United States Government  

Office of Legacy Management (LM)

Don F 1328.8 Don F 1328.8 . . .449J ' Em wm ; United States Government , % - memorandum L c*m Al.)G 2 9 a34 yz;; EM-421 (If. A. Willlams, 427-1719) lq,iMAL Department of Energy m5 MA, \i& SUBJECT: Elimination of the Sites from the Formerly Utllized Sites Remedial A&Ion Prograa ' a The File In 1990, with the assistance of Hr. Doug Tonkay and Ms. Htchelle L&is, I reviewed a number of sites that had fomerly provided goods and/or services to the Fernald faclllty as subcontractors. For 24 of.these sites, recoarwndations were ude to eliainate thm from further consideratton under Formerly Utilized Sites Reaedial Actlon Progrm (FUSRAP). In each case, I made or revlewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more

424

UNITED STATES GOVERNMENT  

Office of Legacy Management (LM)

'.... '|le , * f C. '.... '|le , * f C. Office Memorandum · UNITED STATES GOVERNMENT .-- J TO ' Leo Graup, Chief, DATE: September 29, 1958 Property Management Branch rFi0 : M. S. Weinstein Industrial Hygiene Branch, HASL SUBJBT: SURVEY AT HAIST PROPETIY SYMBOL: HSH:MSW. Thisl property was purchased during MED operation and used as a dumping ground for refinery residues generated by Linde Air Products during their period of participation in the refinery operations program. \It 2 consists of 10 acres in addition to a perpetual .ease- ment right to a strip of land, 10 feet wide and 3600 feet long. The area is located in North Tonawanda, New York near the Niagara River. Because of the growth of adjacent industries, this particular piece of property has appreciated in value. During its tenure as responsible property management office, Oak

425

United States Government  

Office of Legacy Management (LM)

OOE F 1325.8 OOE F 1325.8 - EFgzk3) United States Government tiemorandum 0 wt;? -J Department of Energy DATE: SEP 2 5 1992 REPLY TO Al-TN OF: EM-421 (W. A. W illiams, 903-8149) SUBJECT: Authorization for Remedial Action at Diamond Magnesium Site in Painesville, Ohio TO: L. Price, OR The former Diamond Magnesium Company site located at 720 Fairport-Nursery Road in Painesville, Ohio, is designated for remedial action under the Formerly Utilized Sites Remedial Action Program (FUSRAP). The site is owned by Uniroyal Chemical Company and by Lonza Chemical, Incorporated. This designation is based on the results of a radiological survey and conclusions from an authority review as noted in the attached Designation Summary. Copies of the radiological survey reports and the authority

426

United States Government  

Office of Legacy Management (LM)

Z&Et,? y-p . c' Z&Et,? y-p . c' )7q/ I cuq,~ United States Government Department of Energy memoranduin I " . : I ;/ ,I DATE: hufi 2 9 1594 \ ' - y:oTFq M-421 (W. A. Ylllius, 427-1719) ' ii Y - SIJWECT: Elimination of the Sites from the Formerly Utilfzed Sites Remedial Actjon Progru TO The File In 1990, with the assistance of Mr. reviewed a number of sites that had services to the Fernald facility as sites, recommendations were made to ___ _- _ consideration under Formerly Utiltzed Sites Remedial Action Program (FUSRAP). In each case, I made or reviewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more formal record of the decision on these sites and to ratify and confirm the prior elimination of each site froa FUSRAP.

427

United States Government  

Office of Legacy Management (LM)

DOE F t325.8 DOE F t325.8 (s8s) Dl? l 36-z EFG (07-90) United States Government m e m o randum Department of Energy DATE: LUG 2 ' 3 1394 ",cl,'," EM-421 (W. A. W illiams, 427-1719) SUBJECT: Elimination of the Sites from the Formerly Utilized Sites Remedial Action Program To' The File In 1990, with the assistance of M r. Doug Tonkay and Ms. M ichelle Landis, I reviewed a number of sites that had formerly provided goods and/or services to the Fernald facility as subcontractors. For 24 of these sites, recoamnendations were aade to eliminate them from further consideration under Formerly Utilized Sites Remedial Action Program (FUSRAP). In each case, I made or reviewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more

428

- United States Government  

Office of Legacy Management (LM)

8 8 my EFG (07.90) . - United States Government . * Department of. Energy * inemorandum DATE: DEC :! ;j 1993 REPLY TO ATTN OF: EM-421 (W.'A. W illiams, 903-8149) : NY 41 I .' 41 G I? SUBJECT: Elimination of the T itanium Alloy Manufacturing Co., Niagara Falls, New York TO: The F ile I have reviewed the attached site. summary and elimination recommendation for the T itanium Alloy Manufacturing Company. I have determined that the potential for radiological contamination is low because of the lim ited duration of the activities at the site. Further, at least some of the contractual activities at the site were licensed under the Atomic Energy Act, and the licensed activities are thereby disqualified from further consideration under the Department of Energy's Formerly Utilized Sites

429

United States Government  

Office of Legacy Management (LM)

UOEF 1325.8 UOEF 1325.8 (5831 , - a.. L . . L. . c ,, . . . t ,' <, .* -,. .--1^ a "-2 (J 7 , pe-;L, United States Government memorandum Departmen: of Energy DATEAUG 1 0 1984 REPLY TO Al-fN OF: NE-20 SUBJECT: Action Description Memorandum (ADM) Review: Wayne, New Jersey Proposed 1984 Remedial Actions at TO: File After reviewing all of the pertinent facts including the attached Action Description Memorandum (ADM), I have determined that the remedial action described in the subject ADM is an action which in and of itself will have a clearly insignificant impact on the quality of the human environment within the meaning of the National Environmental Policy Act (NEPA), 42 U.S.C. 4321 et seq. The Conference Report accompanying the Energy and Water Appropriation Act

430

United States Government  

Office of Legacy Management (LM)

I8 891 I8 891 EFG (07.90) United States Government m e m o randum bepartrne% of Energy -P ' ; N. A *I Pi id : DATE: AUG 3, 9 1994 REPLY TO Al-iN OF: EM-421 (W. A. W illiams, 427-1719) r, )' \, ! c ' d, ' t ' 3 ' 2 -L SUBJECT: Elimination of the Sites from the Formerly Utilized Sites Remedial Action Program To' The File In 1990, with the assistance of M r. Doug Tonlsay and Ms. M ichelle Landis, I reviewed a nmber of sites that had formerly provided goods and/or services to the Fernald facility as subcontractors. For 24 of.these sites, recommdations were made to eliminate them from further consideration under Formerly Utilized Sites Remedial Action Program (FUSRAP). In each case, I made or reviewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more

431

United States Government  

Office of Legacy Management (LM)

81278 81278 United States Government Department of Energy memorandum - ?71 S.EP 23 F; i: 54 DATE: SEP 1 8 1991 REPLY TO ATTNOF: EM-421 (P. Blom, 3-8148) SUBJECT: Approved Categorical Exclusion for Removal Actions at Elza Gate, Tennessee TO: Lester K. Price, OR Attached is a copy of the approved Categorical Exclusion (CX) for removal of contaminated material at the Elza Gate site in Tennessee. The removal action involves the removal of radioactive contaminated soil and concrete as well as the removal of Polychlorinated Biphenyl (PCB) contaminated soil. This CX was approved by Carol Borgstrom, Office of National Environmental Policy Act Oversight (EH-25), September 9, 1991. Paul F. Blom Off-Site Branch Division of Eastern Area Programs Office of Environmental Restoration

432

United States Government  

Office of Legacy Management (LM)

D;F&g,8 C-r-I 3-3 D;F&g,8 C-r-I 3-3 .*. United States Government . memorandum DATE: JUNZO 1994 -... REPLY TO A?TN OF: EM-421 (W. A. Williams, 903-8149) Authority Determination -- Combustion Engineering Site, Windsor, SUBJECT: Connecticut To' The File The attached review, documents the basis for determining whether the Department of Energy (DOE) has authority for taking remedial action at the Combustion Engineering (CE) Site in Windsor, Connecticut, under the Formerly Utilized Sites Remedial Action Program. CE was a prime contractor for the Atomic Energy Commission (AEC) and performed high-enriched uranium fuel fabrication work from 1955 to 1967. The services furnished at the CE site included some experimental work; however, it primarily consisted of fabrication of high-enriched uranium

433

United States Government  

Office of Legacy Management (LM)

DOEF1325.8 P4 0 * 1 - 1 DOEF1325.8 P4 0 * 1 - 1 - Iq \ b- United States Government memorandum pJ .T\ \b Department of Energy DATE: OCT 9 1984 REPLY TO NE-20 All-N OF: .- Authorizations for Actions Under the Formerly Utilized Sites Remedial Action SUBJECT: Program (FUSRAP) at the St. Louis Airport Storage Site, St. Louis, MO. and the W. R. Grace Site at Curtis Bay, Md. To: J. LaGrone, Manager Oak Ridge Operations Office St. Louis Airport Storage Site, MO The House and Senate Reports for the Energy and Water Development Appropriation Act (P.L. 98-360) directed the Department of Energy "...to take the necessary steps to consolidate and dispose of the waste material from the Latty Avenue site and nearby St. Louis Airport vicinity properties locally, by reacquiring, stabilizing, and using the old 21.7

434

United States Government  

Office of Legacy Management (LM)

ooc F r325.8 ooc F r325.8 imo, EFO ,ww United States Government memorandum Department of Energy -fw?w 81ua DATE: FEB 1 5 1991 l+Ks6 sUsJECT: Elimination of the Buflovak Company Site from FUSRAP ho: The File I have reiiewed the attached preliminary site summary and recommendation for the Buflovak Company site in Buffalo, New York. I have determined that there is little likelihood of contamination at this site. Based on the above, the Buflovak Company site is hereby eliminated from further consideration under the Formerly Utilized Sites Remedial Action Program. W. Alexander Williams Designation and Certification Manager Off-Site Branch Division of Eastern Area Programs Office of Environmental Restoration Attachment - I . b e e : W e s to n E M - 4 0 ( 3 ) E M - 4 2 ( 2 ) W illiams r

435

United States Attorney General  

Broader source: Energy.gov (indexed) [DOE]

93, 5 U.S. Op. Off. Legal Counsel 1, 1981 WL 30865 (U.S.A.G.) 93, 5 U.S. Op. Off. Legal Counsel 1, 1981 WL 30865 (U.S.A.G.) United States Attorney General ***1 *293 January 16, 1981 **1 The President The White House Washington, D.C. 20500 MY DEAR MR. PRESIDENT: You have asked my opinion concerning the scope of currently existing legal and constitutional authorities for the continuance of government functions during a temporary lapse in appropriations, such as the Government sustained on October 1, 1980. As you know, some initial determination concerning the extent of these authorities had to be made in the waning hours of the last fiscal year in order to avoid extreme administrative confusion that might have arisen from Congress' failure timely to enact 11 of the 13 anticipated regular appropriations bills, FN;B1[FN1]FN;F1 or a

436

United States Government  

Broader source: Energy.gov (indexed) [DOE]

3/02 TUE 08:59 FAX 423 241 3897 OIG *-* HQ 00o2 3/02 TUE 08:59 FAX 423 241 3897 OIG *-* HQ 00o2 DOE F 132,.8 W.I: ((07.9u) United States Government Department of Energy Memorandum DATE: December 2, 2002 REPLY TO REPLY TO -36 (A02SR013) Audit Report No.: OAS-L-03-07 ATTN OF: SUBJECT: Audit of Subcontracting Practices at the Savannah River Site TO: Jeffrey M. Allison, Acting Manager, Savannah River Operations Office INTRODUCTION AND OBJECTIVE The Department of Energy (Department) has contracted with Westinghouse Savannah River Company, LLC (Westinghouse) to manage and operate the Savannah River Site (Savannah River) through September 30, 2006. As of August 2, 2002, Westinghouse had 534 open and active service procurements worth $100,000 or more each, with a total value of about $518 million, that it had awarded since October 1996.

437

United States Goverment  

Broader source: Energy.gov (indexed) [DOE]

6/03 15:37 FAX 301 903 4656 _ CAPITAL REGION * FORS FIVEA 91002/004 6/03 15:37 FAX 301 903 4656 _ CAPITAL REGION * FORS FIVEA 91002/004 DOE-F 1325.8 (68-93) Depament of Energy United States Goverment Department of Energy Memorandum OFFICE OF .NSPECTOR GENERAL DATE: February 26, 2003 REPLY TO ATTN OF: IG-34 (A02CG004) Audit Report No.: OAS-L-03-11 SUBJECT: Audit of the Office of Science Infrastructure Modernization Initiatives TO: Acting Associate Director, Office of Laboratory Operations and Environment, Safety and Health, SC-80 The purpose of this report is to inform you of the results of our audit of the Office of Science's infrastructure modernization initiatives. The audit was performed between May and September 2002 at Departmental Headquarters, Brookhaven National Laboratory, and Argonne National Laboratory. The audit methodology is described in

438

United States Government  

Broader source: Energy.gov (indexed) [DOE]

w w f.b wr w f k--w .^^- - w w f.b wr w f k--w .^^- - - r - T- - * -* p -ldt - f f - - -J -vv- A n JV DOE F 1325.8 (08-93) United States Government ------- Department of Energy memorandum DATE: June 15, 2006 REPLY TO Audit Report Number: OAS-L-06-15 ATTN OF: IG-32 (A05SR029) SUBJECT Audit of "Storage Capacity of the Iligh Level Waste Tanks at the Savannah River TO: Manager, Savannah River Operations Office INTRODUCTION AND OBJECTIVE The Savannah River Site in South Carolina currently stores about 36 million gallons of waste in 49 active underground storag,* .ks. Twenty-two of these .anks do not meet Environmcntal Protection A&-.y (EPA) requirements ybr full secondary containment and must be emptied and closed by 2022 in accordance with a closure schedule approved by the EPA and the 5oith Carolina Department

439

United States Government  

Broader source: Energy.gov (indexed) [DOE]

0/02 WED 09:58 FAX 423 241 3897 OIG 0/02 WED 09:58 FAX 423 241 3897 OIG -.- +-+ HQ ]002 rFG (07-;1) United States Government Department of Energy Memorandum DATE: October 29, 2002 REPLY TO 1G-36 (A02DN028) Audit Report No.: OAS-L-03-01 ATTN OF; SUBJECT: Audit of Procurement at the Rocky Flats Environmental Technology Site TO: Eugene Schmitt, Manager, Rocky Flats Field Office ' INTRODUCTION AND OBJECTIVE The Department of Energy (Department) and its site contractor, Kaiser-Hill Company, LLC (Kaiser-Hill), contracted in January 2000 to close the Rocky Flats Environmental Technology Site (Rocky Flats) by a target date of December'15, 2006. As of May 2002, Kaiser-Hill had awarded 784 procurements worth more than $25,000 each, with a total value of about $368.6 million, to support the complex activities required for site closure.

440

United States Government  

Broader source: Energy.gov (indexed) [DOE]

uV,./ J.r./ i L .. * i. uV,./ J.r./ i L .. * i. 0 r '± J o ,. NL . Jurt -. rur.mO rI[ V Jg, ]VJUU"/UU4 DOE F 1325.8 (08-93) United States Government Department of Energy Memorandum OFFICE OF INSPECTOR GENERAL DATE: January 10, 2006 REPLY TO ATTN OF: IG-34 (A06GT029) Audit Report No.: OAS-L-06-06 SUBJECT: Review of the Independent Auditor's Report on The Institute for Genomic Research for the Year Ending December 31, 2004 * TO: Manager, Chicago Office INTRODUCTION AND OBJECTIVE The Institute for Genomic Research (Institute) in Rockville, Maryland is a not-for- profit center that studies areas such as plant, microbial and mammalian genomics. The Institute receives funding from seven Federal agencies to advance its research and development. As required by the Office of Management and Budget (0MB)

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

A review of methods to match building energy simulation modelsto measured data  

E-Print Network [OSTI]

Younger W. Handbook of energy audits. 7th ed.. Lilburn, GA:for commercial building energy audits. 2nd ed. Atlanta, GA:B. Investment grade energy audit. In: Proceedings of the

Coakley, Daniel; Raftery, Paul; Keane, Marcus

2014-01-01T23:59:59.000Z

442

Liquid Crystalline Polymer (LCP) Based Lumped-Element Bandpass Filters for Multiple WirelessApplications'  

E-Print Network [OSTI]

, Inc., Atlanta, GA 30332, USA Abstract - This paper presents for the first time the design* *Schoolof Electrical Engineering, Georga Institute of Technology,Atlanta, GA 30332,USA **JacketMicro Devices the sides used as inpdoutput terminals thus minimizing radiation losses and EM1 interference, 2) using

Swaminathan, Madhavan

443

2196 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 53, NO. 6, JUNE 2005 Layout-Level Synthesis of RF Inductors and Filters  

E-Print Network [OSTI]

is with Jacket Micro Devices Inc., Atlanta, GA, 30308 USA. M. Swaminathan is with the Department of Electrical Devices Inc., Atlanta, GA, 30308 USA. Digital Object Identifier 10.1109/TMTT.2005.848782 factor and stripline configuration are within 5% of data obtained from electromagnetic (EM) simulations. For RF

Swaminathan, Madhavan

444

Next Generation Rooftop Unit | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Generation Rooftop Unit A typical commercial rooftop air-conditioning unit (RTU) Credit: Oak Ridge National Lab A typical commercial rooftop air-conditioning unit (RTU) Credit:...

445

UNIT NUMBER SWMU 175 UNIT NAME: Concrete Rubble Pile (28...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

75 UNIT NAME: Concrete Rubble Pile (28) REGULATORY STATUS: AOC LOCATION: Outside Security Fence, East of C-360 Building in KPDES Outfall Ditch 002. APPROXIMATE DIMENSIONS: 400 ft...

446

Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer  

SciTech Connect (OSTI)

Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup ?2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H. [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan); Kachi, T. [Toyota Central R and D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Sugimoto, M. [Toyota Motor Corporation, 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309 (Japan)

2013-12-04T23:59:59.000Z

447

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network [OSTI]

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

448

Growth of Core?Shell Ga?GaN Nanostructures via a Conventional Reflux Method and the Formation of Hollow GaN Spheres  

Science Journals Connector (OSTI)

Gallium nitride (GaN) is an important III?V semiconductor with a wide direct band gap of ?3.4 eV. ... LiHMDS exhibits good solubility in TOA. ... The products were collected by centrifugation twice at 7000 rpm for 2 min in hexane, isopropanol, ethanol, and then deionized water. ...

Tz-Jun Kuo; Chi-Liang Kuo; Chun-Hong Kuo; Michael H. Huang

2009-02-05T23:59:59.000Z

449

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect (OSTI)

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

450

Metal contacts on ZnSe and GaN  

SciTech Connect (OSTI)

Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

Duxstad, K.J. [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering; [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

1997-05-01T23:59:59.000Z

451

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network [OSTI]

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

452

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect (OSTI)

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

453

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN  

E-Print Network [OSTI]

. Hasama, "Subpicosecond saturation of intersubband absorption in (CdS/ZnSe)/BeTe quantum well waveguides. Cho, "Intersubband absorption at ~ 1.55 m in well- and modulation-doped GaN/AlGaN multiple quantum

454

Atomic-Level Study of Melting Behavior of GaN Nanotubes. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Melting Behavior of GaN Nanotubes. Atomic-Level Study of Melting Behavior of GaN Nanotubes. Abstract: Molecular dynamics simulations with a Stillinger-Weber potential have been...

455

Electric field engineering in GaN high electron mobility transistors  

E-Print Network [OSTI]

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

456

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

457

Second United Nations  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

i' i' Second United Nations t Jnternational Conference 1 , of Atomic Energy on the Peaceful Uses 4 i \ Confidential until official release during Conference ORIGINAL: ENGLISH METHODS O F PARTICLE DETECTION FOR HIGH-ENERGY PHYSICS EXPERIMENTS t * H. B r a d n e r and D. A. Glaser - INTRODUCTION J 1 % c Recent advances in our knowledge of t h e phenomena of high-energy physics and o'f the e l e m e n t a r y p a r t i c l e s h a s r e s u l t e d f r o m rapid advances in the technology of p a r t i c l e a c c e l e r a t o r s and the art of p a r t i c l e detection. cl'asses: (1) the "track-imaging" device in which one s e e s o r photographs t r a c k s which coincide with the a c t u a l path taken by the p a r t i c l e s , and ( 2 ) counting d e - v i c e s which give only an indication that the p a r t i c l e s p a s s somewhere in the

458

United States Government  

Broader source: Energy.gov (indexed) [DOE]

uq/Uu.3/uo U-L:i ' rAA OuL a uo oUu. 0tri.l± i m,.i,*, u". run.' r.yrcir V e.u uq/Uu.3/uo U-L:i ' rAA OuL a uo oUu. 0tri.l± i m,.i,*, u". run.' r.yrcir V e.u O000DOE F 1325.8 (08-93) Department of Energy United States Government Department of Energy Memorandum OFFICE OF INSPECTOR GENERAL DATE: March 31,2006 REPLY TO ATTN OF: IG-34 (A05TG028) Audit Report No.: OAS-L-06-10 SUBJECT: Report on Audit of "The Department's Information Technology Capital Planning and Investment Control Process" TO: Chief Information Officer, IM-1 INTRODUCTION AND OBJECTIVE Federal guidance requires that Agencies develop and implement capital planning and investment control (CPIC) processes to help ensure that their major information technology investments achieve intended outcomes, represent the best allocation of resources, and reach strategic goals and objectives. The Department of Energy

459

United States Government  

Broader source: Energy.gov (indexed) [DOE]

2/04 THU 14:52 FAX 423 241 3897 OIG -**- HQ l015 2/04 THU 14:52 FAX 423 241 3897 OIG -**- HQ l015 ol: Fi 13 5.8 (8-09) £1*G (in'mi^)) United States Government Department of Energy Memorandum DATE: April. 22, 2004 REPLY TO ATTN OF: T -36 (A04RL018) Audit Report No.: OAS-L-04-15 SUBJECT: Audit of Disposition of Excess Facilities at the Hanford Site TO: Keith A. Klein, Manager, Richland Operations Office INTRODUCTION AND OBJECTIVE The Hanford Site (Hanford) is the largest of the three original defense production sites founded during World War II. Between 1943 and 1963, nine plutonium production reactors were built along the Columbia River and five processing facilities were built on the site's Central Plateau, with about 1,000 support facilities. Currently, Hanford has a total of 1,500 facilities of which an estimated 1,000 are excess to current and future mission

460

United States Goverment  

Broader source: Energy.gov (indexed) [DOE]

UO/J±0ou4 TcdJ ± O:S'. Aa. ou* o *.I. I 01j ' . UO/J±0ou4 TcdJ ± O:S'. Aa. ou* o *.I. I 01j ' . - - 00E F 1325,8 (08-93) United States Goverment Department of Energy memorandum DATE: August 13, 2007 Audit Report Number: OAS-L-07-19 REPLY TO ATTN OF: IG-32 (A07PR059) SUBJECT: Audit of Executive Compensation at Selected Office of Science Sites TO: Chief Operating, Officer, Office of Science INTRODUCTION AND OBJECTIVE As part of a Department of Energy-wide audit of executive compensation, we reviewed seven Office of Science sites. Specifically, we reviewed executive compensation costs incurred ~,r claim~.- fr- F".*l*- Y. rs 2003, 2 , and 2005 at - Argonne National Laboratory (Argonne), Brookhaven National Laboratory (Brookhaven), Lawrence Berkeley National Laboratory (LBNL), Oak Ridge Institute for Science and Education, Oak Ridge National Laboratory, Princeton Plasma Physics

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

United States Government Department  

Broader source: Energy.gov (indexed) [DOE]

1/03 07:45 FAX 301 903 4656 CAPITAL REGION -* FORS FIVEA I002/004 1/03 07:45 FAX 301 903 4656 CAPITAL REGION -* FORS FIVEA I002/004 DOE F 1325 ' (8-69) EFO (07-90) United States Government Department of Eneray memorandum DATE: PR17 2003 Audit Report No.: OAS-L-03-14 REPLY TO ATTN OF: IG-34 (A03PT040) SUBJECT: Audit of the Office of Energy Efficiency and Renewable Energy's (EE) Grants, Subsidies, and Cost Sharing Arrangements TO: Assistant Secretary for Energy Efficiency and Renewable Energy, EE-1 The purpose of this report is to inform you of the results of our review of the Office of Energy Efficiency and Renewable Energy's (EE) incentive payments and cost-share arrangements. The review was initiated in February 2003, and fieldwork was conducted through April 2003 at Department of Energy (Department) Headquarters. Our methodology is described in the attachment to this report.

462

THERMAL STUDY OF A GaN-BASED HEMT A Dissertation  

E-Print Network [OSTI]

of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) under bias conditions. An experimental

Sen, Mihir

463

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect (OSTI)

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

464

Doping and isolation of GaN, InGaN and InAlN using ion implantation  

SciTech Connect (OSTI)

Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after subsequent annealing in the range 600-700{degrees}C. Smaller increases in sheet resistance are observed for In{sub x}Ga{sup 1-x}N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.

Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States)] [and others

1995-08-01T23:59:59.000Z

465

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect (OSTI)

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

466

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect (OSTI)

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Universit, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

467

Unit Process Library | netl.doe.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Unit Process Library LCA Projects Models-Tools Presentations Unit Process Library A unit process is the smallest building block in a life cycle model. Each unit process contains...

468

Novel photoaffinity ligands for the GA-receptor  

SciTech Connect (OSTI)

Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

Suttle, J.C.; Hultstrand, J.F.; Tanaka, F.S. (USDA/ARS Biosciences Research Laboratory, Fargo, ND (USA))

1990-05-01T23:59:59.000Z

469

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect (OSTI)

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

470

Invited Paper GaAs/A1O photonic bandgap material fabrication and characterization  

E-Print Network [OSTI]

semiconductor crystals, photonic crystals do not occur naturally. There are, therefore, several seemingly direct bandgap semiconductors, such as GaAs, A1GaAs, InP, InGaAsP, etc., in which the radiative-dimensional photonic bandgaps for microwave and millimeter-wave radiation, and for shorter optical wavelengths in one

Zhou, Weidong

471

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network [OSTI]

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

472

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

473

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network [OSTI]

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

474

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network [OSTI]

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

475

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

476

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

477

Surface morphology and magnetic anisotropy in (Ga,Mn)As  

E-Print Network [OSTI]

Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.

S. Piano; X. Marti; A. W. Rushforth; K. W. Edmonds; R. P. Campion; O. Caha; T. U. Schulli; V. Holy; B. L. Gallagher

2010-10-01T23:59:59.000Z

478

Operating experience with a GaAs photoemission electron source  

SciTech Connect (OSTI)

We report on the development of several operating procedures that promise to make GaAs photoemission electron sources easier to construct, more reliable to operate, and more amenable to use in dynamic vacuum systems. We describe in particular a method for ''ohmically'' heating a <100> crystal of GaAs under vacuum to approximately 600 /sup 0/C. We also discuss our observations of the role of oxygen in the activation of the crystal surface, the use of continuous cesiation, and of the performance of the crystal under varying vacuum conditions.

Tang, F.C.; Lubell, M.S.; Rubin, K.; Vasilakis, A.; Eminyan, M.; Slevin, J.

1986-12-01T23:59:59.000Z

479

An investigation on reliable passivation of GaP  

E-Print Network [OSTI]

reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index... reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index...

Greaves King, Carlos A.

2012-06-07T23:59:59.000Z

480

Interband transitions in molecular?beam?epitaxial Al x Ga1?x As/GaAs  

Science Journals Connector (OSTI)

Interband transition energies for Al x Ga1?x As layers grown by molecular?beam epitaxy(MBE) techniques have been determined using the electrolyte electroreflectance (EER) technique. The observed data fit quadratic relations for E 0 E 0+?0 E 1 and E 1+?1 to describe variations of energy with composition. Although the x values were not accurately known the internal consistency of the data is excellent. Given a single bowing parameter we show that accurate values of x can be determined. The EER technique can provide x values with an accuracy better than 0.02 and information on changes in x as small as 0.002. It is thus ideally suited for studying MBE materials.

J. L. Aubel; U. K. Reddy; S. Sundaram; W. T. Beard; James Comas

1985-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells  

Science Journals Connector (OSTI)

Dry etch induced damage of GaAs/InGaAs/GaAs heterostructures in an electron cyclotron resonance (ECR) argon discharge has been investigated as a function of additional radio frequency self?biasing of the sample and process pressure in argon ECR discharges. We used depth resolved photoluminescence measurements to determine the influence of the etch process on the samples. We observe a decreasing damage depth for smaller bias voltages reaching its lowest value of 1.7 nm at 20 V bias and a pressure of 0.15 Pa. For lower pressures we observe a strong increase of the damage which is attributed predominantly to high energetic vacuum ultraviolet radiation from the ECR region.

T. Bickl; B. Jacobs; J. Straka; A. Forchel

1993-01-01T23:59:59.000Z

482

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

483

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect (OSTI)

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

484

Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy  

Science Journals Connector (OSTI)

The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are addressed. The axial and radial growth rates as a function of the Ga rate and As pressure indicate that on the opposite of what is observed in thin film epitaxy, the growth rate of the nanowires is arsenic limited. As a consequence, the axial growth rate of the wires can be controlled by the As4 pressure. Additionally, due to the small As4 pressure leading to nanowire growth, the deposition on the facets is very slow, leading to a much lower radial growth rate. Finally, we present a model that is able to accurately describe the presented observations and predicts a maximum length of nontapered nanowires of 40?m.

C. Colombo; D. Spirkoska; M. Frimmer; G. Abstreiter; A. Fontcuberta i Morral

2008-04-28T23:59:59.000Z

485

Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures  

Science Journals Connector (OSTI)

The carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well heterostructures have been determined as a function of the incorporated compressive strain in the (GaIn)As quantum-well layer by applying magneto-optical studies. The precise structural parameters, i.e., individual layer thicknesses, strain values, and crystalline perfection, have been determined independently by high-resolution x-ray diffraction and transmission electron microscopy. By analyzing both the allowed and forbidden optical transitions as a function of the magnetic field, detected by polarization-dependent magnetophotoluminescence excitation spectroscopy, the exciton binding energy as well as the effective in-plane electron and heavy-hole masses have been determined quantitatively as a function of strain. The theoretically predicted significant decrease of the in-plane heavy-hole mass with increasing strain has been observed. The obtained results are discussed and compared with the contradictory results reported in the literature.

M. Volk; S. Lutgen; T. Marschner; W. Stolz; E. O. Gbel; P. C. M. Christianen; J. C. Maan

1995-10-15T23:59:59.000Z

486

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect (OSTI)

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

487

InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy  

SciTech Connect (OSTI)

We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial In{sub x}Ga{sub 1-x}As (x{approx}0.20) inserts with thicknesses from 36 to 220 nm with {+-}10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration.

Shapiro, J. N.; Lin, A.; Wong, P. S.; Scofield, A. C.; Tu, C.; Senanayake, P. N.; Mariani, G.; Liang, B. L.; Huffaker, D. L. [Department of Electrical Engineering and California Nano-Systems Institute, University of California at Los Angeles, Los Angeles, California 90095 (United States)

2010-12-13T23:59:59.000Z

488

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect (OSTI)

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

489

Structure of negatively charged muonium in n-type GaAs  

Science Journals Connector (OSTI)

Muon level-crossing resonance and muon-spin-rotation measurements on heavily doped n-type GaAs:Si and GaAs:Te show that the majority of positive muons implanted at room temperature form an isolated diamagnetic muonium center located at a high-symmetry site with Ga neighbors along the ?111? direction(s). These experiments, together with theoretical considerations, imply that negatively charged muonium is at or near the tetrahedral interstitial site with four Ga nearest-neighbor atoms. Except for zero-point energy differences, these results should model negatively charged isolated hydrogen in GaAs.

K.H. Chow; R.F. Kiefl; W.A. MacFarlane; J.W. Schneider; D.W. Cooke; M. Leon; M. Paciotti; T.L. Estle; B. Hitti; R.L. Lichti; S.F.J. Cox; C. Schwab; E.A. Davis; A. Morrobel-Sosa; L. Zavieh

1995-05-15T23:59:59.000Z

490

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density  

E-Print Network [OSTI]

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

Chen, Zhi

491

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network [OSTI]

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

492

Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy  

SciTech Connect (OSTI)

We report on the studies of optical phonon modes in nearly defect-free GaN nanowires embedded with intrinsic InGaN quantum dots by using oblique angle transmission infrared spectroscopy. These phonon modes are dependent on the nanowire fill-factor, doping densities of the nanowires, and the presence of InGaN dots. These factors can be applied for potential phonon based photodetectors whose spectral responses can be tailored by varying a combination of these three parameters. The optical anisotropy along the growth (c-) axis of the GaN nanowire contributes to the polarization agility of such potential photodetectors.

Titus, J.; Perera, A. G. U. [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)] [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States); Nguyen, H. P. T.; Mi, Z. [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)] [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)

2013-03-25T23:59:59.000Z

493

Corrective Action Management Units and Temporary Units. RCRA Information Brief  

SciTech Connect (OSTI)

On February 16, 1993 the EPA published a final rule that allows either the EPA Regional Administrator or the authorized State to designate areas as corrective action management units (CAMUs) at hazardous waste management facilities for the specific purpose of managing remediation waste that has been generated as part of the facility`s corrective action activities. According to the rule, placement of remediation wastes into or within a CAMU does not constitute land disposal of hazardous waste and is not subject to RCRA land disposal restrictions. In addition, waste disposal units located within CAMUs are not required to be designed in accordance with RCRA minimum technological requirements applicable to land disposal units. This Information Brief explains the advantages of a CAMU designation, defines a Temporary Unit (TU) and explains the advantages of a TU designation. The process for initiating a CAMU or TU designation is described for DOE sites and interim status facilities.

Not Available

1994-03-01T23:59:59.000Z

494

GA103 a microprogrammable processor for online filtering  

E-Print Network [OSTI]

GA103 is a 16 bit microprogrammable processor, which emulates the PDP 11 instruction set. It is based on the Am2900 slices. It allows user- implemented microinstructions and addition of hardwired processors. It will perform online filtering tasks in the NA14 experiment at CERN, based on the reconstruction of transverse momentum of photons detected in a lead glass calorimeter. (3 refs).

Calzas, A; Danon, G

1981-01-01T23:59:59.000Z

495

Response of GaAs to fast intense laser pulses  

E-Print Network [OSTI]

Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

Graves, JS; Allen, Roland E.

1998-01-01T23:59:59.000Z

496

Recombination in Low-Bandgap InGaAs  

SciTech Connect (OSTI)

We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

Gfroerer, T. H.; Wanlass, M. W.

2006-01-01T23:59:59.000Z

497

High-quality InP on GaAs  

E-Print Network [OSTI]

In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

Quitoriano, Nathaniel Joseph

2006-01-01T23:59:59.000Z

498

MOCVD Growth of AlGaInN for UV Emitters  

SciTech Connect (OSTI)

Issues related to the growth of nitride-based UV emitters are investigated in this work. More than 100 times of improved in the optical efficiency of the GaN active region can be attained with a combination of raising the growth pressure and introducing a small amount of indium. The unique issue in the UV emitter concerning the use of AlGaN for confinement and the associated tensile cracking is also investigated. They showed that the quaternary AlGaInN is potentially capable of providing confinement to GaN and GaN:In active regions while maintaining lattice matching to GaN, unlike the AlGaN ternary system.

Crawford, Mary; Han, Jung

1999-07-07T23:59:59.000Z

499

06-GA50035b.p65  

Broader source: Energy.gov (indexed) [DOE]

WWW.GNEP.ENERGY.GOV WWW.GNEP.ENERGY.GOV United States Department of Energy Continued next page T he Global Nuclear Energy Partnership (GNEP) is a comprehensive strategy to increase U.S. and global energy security, encourage clean development around the world, reduce the risk of nuclear proliferation, and improve the environment. A plentiful, reliable supply of energy is the cornerstone of sustained economic growth and prosperity. Nuclear power is the only proven technology that can provide abundant supplies of base load electricity reliably and without air pollution or emissions of greenhouse gasses. In The Global Nuclear Energy Partnership: Greater Energy Security in a Cleaner, Safer World order to help meet growing demand for energy at home and encourage the growth of prosperity

500

Projected Performance of Three- and Four-Junction Devices Using GaAs and GaInP  

E-Print Network [OSTI]

This paper explores the efficiencies expected for three- and four-junction devices for both space and terrestrial applications. For space applications, the effects of temperature and low concentration are investigated. For terrestrial applications, a concentration of 500 suns is assumed and the theoretical efficiencies are calculated as a function of spectral variations including the effects of air mass, turbidity, and water-vapor content. INTRODUCTION Ga 0.5 In 0.5 P/GaAs two-terminal, two-junction solar cells, invented and developed at the National Renewable Energy Laboratory, are in production at both TECSTAR and Spectrolab. The immediate market for these devices is in space; a future (potentially larger) market is terrestrial concentrator systems. The next-generation cells will add additional junction(s) in order to increase the efficiency. Work on a three-junction cell using an active Ge junction under the Ga 0.5 In 0.5 P/GaAs dual-junction cell has already been reported [1]. Ho...

Gainp; S. R. Kurtz; Sarah R. Kurtz; D. Myers; D. Myers; J.M. Olson; J. M. Olson

1997-01-01T23:59:59.000Z