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1

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

2

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

3

Presented at the ASHRAE Winter Meeting, Atlanta, GA, February 1721, 1996, and to be published in the Proceedings  

E-Print Network (OSTI)

LBL-37037 UC-1600 Presented at the ASHRAE Winter Meeting, Atlanta, GA, February 17­21, 1996 Berkeley National Laboratory is an equal opportunity employer. #12;LBL-37037 Mo-345 Presented atthe ASHRAE University of California Berkeley, CA 94720 September 1995 This research was jointly supported by ASHRAE

4

Presented at the ASHRAE Winter Meeting, Atlanta, GA, February 17-21, 1996, and published in the Proceedings. Calorimetric Measurements of Inward-Flowing Fraction  

E-Print Network (OSTI)

LBL-37038 Mo-346 Presented at the ASHRAE Winter Meeting, Atlanta, GA, February 17-21, 1996 was jointly supported by ASHRAE, as Research Project 548-RP under Agreement No. BG 87-127 with the U

5

Advancing Residential Retrofits in Atlanta  

SciTech Connect

This report will summarize the home energy improvements performed in the Atlanta, GA area. In total, nine homes were retrofitted with eight of the homes having predicted source energy savings of approximately 30% or greater based on simulated energy consumption.

Jackson, Roderick K [ORNL; Kim, Eyu-Jin [Southface Energy Institute; Roberts, Sydney [Southface Energy Institute; Stephenson, Robert [Southface Energy Institute

2012-07-01T23:59:59.000Z

6

2009 National Electric Transmission Congestion Study - Atlanta Workshop |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2009 National Electric Transmission Congestion Study - Atlanta 2009 National Electric Transmission Congestion Study - Atlanta Workshop 2009 National Electric Transmission Congestion Study - Atlanta Workshop On July 29, 2008, DOE hosted a regional pre-study workshop in Atlanta, GA to receive input and suggestions concerning the 2009 National Electric Transmission Congestion Study. The agenda and full transcript are available below. 7-29-08 Congestion Workshop Agenda - Atlanta, GA.pdf Transcript - 2009 National Electric Transmission Congestion Study Atlanta Workshop.pdf More Documents & Publications 2009 National Electric Transmission Congestion Study - San Francisco Workshop 2012 National Electric Transmission Congestion Study - St. Louis Workshop 2009 National Electric Transmission Congestion Study - Las Vegas Workshop

7

Atlanta Survey  

U.S. Energy Information Administration (EIA) Indexed Site

Profile of Motor-Vehicle Fleets in Atlanta 1994 Profile of Motor-Vehicle Fleets in Atlanta 1994 Assessing the Market for Alternative-Fuel Vehicles 13 Data Tables for Private Fleets There are two types of tables. One type provides counts of the number of fleets that fall into various categories of data. The other provides counts of the number of vehicles by characteristics. Where only fleet data are provided instead of vehicle data, it means that particular questionnaire item was asked at the fleet level only. Vehicle questions were recorded by type of vehicle not by individual vehicle. Table 1. Number of Private Fleets in Atlanta by Fleet Size and Selected Characteristics Fleet Size (number of vehicles) Selected Characteristics Total 6 to 19 20 to 49 50 or More Total Number of Fleets . . . . . . . . . . . . . . . 3,589

8

Atlanta Chemical Engineering LLC | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » Atlanta Chemical Engineering LLC Jump to: navigation, search Logo: Atlanta Chemical Engineering LLC Name Atlanta Chemical Engineering LLC Place Marietta, Georgia Zip 30064 Country United States Sector Biomass Year founded 2008 Company Type For Profit Company Ownership Private Small Business Yes References Atlanta Chemical Engineering LLC[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Atlanta Chemical Engineering LLC is a company based in Marietta, Georgia. References ↑ "Atlanta Chemical Engineering LLC" Retrieved from "http://en.openei.org/w/index.php?title=Atlanta_Chemical_Engineering_LLC&oldid=699086"

9

Status of cool roof standards in the United States  

E-Print Network (OSTI)

energy codes. Aside from California, these include Atlanta, GA; Chicago, IL; Florida; Georgia; Guam; and Hawaii.

Akbari, Hashem; Levinson, Ronnen

2008-01-01T23:59:59.000Z

10

Atlanta, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Atlanta, Georgia: Energy Resources Atlanta, Georgia: Energy Resources (Redirected from Atlanta, GA) Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.7489954°, -84.3879824° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.7489954,"lon":-84.3879824,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

11

PM, Mercury, and Health Effects: A Workshop for Technical and Communications Staff: Proceedings of Air Quality Workshop Held on Octo ber 2, 2002, Atlanta, GA  

Science Conference Proceedings (OSTI)

An EPRI-sponsored workshop, entitled "PM, Mercury, and Health Effects: A Workshop for Technical and Communications Staff," was held in Atlanta, Georgia on October 2, 2002. Members of the Air Quality and Media Relations Groups conducted the workshop. Attendees were all utility-associated, although several attendees were from non-utility companies. In all, there were 69 attendees, of whom 39 had technical positions and 30 were involved with communications. The workshop was intended to serve as a primer for...

2002-12-03T23:59:59.000Z

12

TEC Rail TG Summary_Atlanta  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

March 5-6, 2007 Atlanta, GA March 5-6, 2007 Atlanta, GA Rail Topic Group Alex Thrower began the meeting and welcomed all topic group participants and support contractor staff. Mr. Thrower established that the following issues and sub-topic group matters required further consideration and in some cases next steps needed to be planned. These include: Inspections Checklist Mr. Thrower requested that members submit their feedback on the items inspected during point of origin and en route inspections in the form of a short listing. Next steps involve: * Presenting the checklist to Federal Railroad Administration (FRA) state managers in a preliminary format; * Discussions with DOT in regard to formatting the checklist; and * Development of a complete reference list to be placed onto blue cards to be used

13

Atlanta residential energy consumption. Final report  

SciTech Connect

Energy consumption in Atlanta, Ga., was analyzed for single - family, townhouse, low - rise, and high - rise structures for 1955, which was selected as a typical weather year. A two - step procedure was employed in calculating energy requirements. In the first step, hourly heating and cooling loads were determined for each dwelling unit. In the second step, monthly and annual energy required to meet heating and cooling loads was calculated using specific heating, cooling, and ventilation systems. Design and structural features considered important in defining the residential structures were construction details and materials, heating and cooling equipment, types of fuels and energy used, and appliances and their energy consumption levels. Lifestyle parameters incorporated in the analysis included thermostat set points, relative humidity set points, type and number of appliances, daily profile of appliance use, and use of ventilation fans. The computer program for determining heating and cooling loads, or heat delivery / removal requirements, for each residence involved subroutines for ascertaining hourly load contributions throughout the year due to conduction, convection, air infiltration, radiation, and internal heat gain. The low - rise type of structure had a cooling load that was more than twice as large as the heating load. The other structures had cooling loads about 1.5 times as large as heating loads. Energy - conserving modifications, involving both structural and comfort control system changes, resulted in the following: single - family and townhouse residences achieved a 32 - percent annual heating load reduction and a 16 - percent cooling load reduction through structural modifications; and low - rise and high - rise residences achieved a 43 - percent reduction in primary energy consumption. Supporting data, illustrative layouts of the residences, and references are included.

Reed, J.E.; Barber, J.E.; White, B.

1976-08-01T23:59:59.000Z

14

Atlanta- Sustainable Development Design Standards  

Energy.gov (U.S. Department of Energy (DOE))

In December 2003, the City of Atlanta passed a green building [http://www.atlantaga.gov/modules/showdocument.aspx?documentid=547 ordinance] that applies to city-owned facilities and city-funded...

15

Atlanta TEC Meeting -- Tribal Group Summary 3-6-07  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA - January 31, 2007 Atlanta, GA - January 31, 2007 Session Chaired by: Jay Jones (DOE, Office of Civilian Radioactive Waste Management, OCRWM) Regular Members in Attendance: Kenny Anderson (Las Vegas Paiute Tribe), Richard Arnold (Las Vegas Indian Center/Pahrump Paiute Tribe), Tony Boyd (Pueblo of Acoma), Rob Burnside (Confederated Tribes of the Umatilla Indian Reservation, CTUIR), Floyd Chaney (Mohegan Tribe), Sandra Covi (Union Pacific Railroad), Martha Crosland (DOE/Office of General Counsel, GC), Kristen Ellis (DOE/Intergovernmental and External Affairs, CI), Frank Gavigan (Mohegan Tribe), Ed Gonzales (ELG Engineering/Pueblo de San Ildefonso), Robert Gruenig (National Tribal Environmental Council, NTEC), Paloma Hill (OCRWM Intern), Judith Holm (OCRWM), Gayl Honanie (Hopi Tribe), Lisa Janairo

16

IEEE Energy2030 Atlanta, GA USA  

E-Print Network (OSTI)

of electricity generation from wind power. While the development is still going on, now wind turbine technology Wind turbine generators (WTG) convert wind energy into electrical power. Now large wind turbines of up around 30 to 40 kV. Fig. 2. Single line diagram of HVAC and HVDC interconnection of offshore wind farm

Hansen, René Rydhof

17

IEEE Energy2030 Atlanta, GA USA  

E-Print Network (OSTI)

vehicles. Car manufacturers understand this trend quite well and are developing new models. For the 90 and the average daily time that cars remain parked is 22 hours. A salient feature that these vehicles have into the grid. We focus on the design of a conceptual framework needs to integrate the electric vehicles

Gross, George

18

Microsoft PowerPoint - 6-03 DOE EM TEM Atlanta AREVA CCIM final 111010.ppt  

NLE Websites -- All DOE Office Websites (Extended Search)

November 17, 2010 November 17, 2010 Next-Generation Induction Melter Technology Development DOE EM Waste Processing Technical Exchange, Nov 16-18, 2010, Atlanta, GA Eric Tchemitcheff, AFS Print Close > DOE EM Waste Processing Technical Exchange - Nov 16-18, 2010 - Atlanta, GA 3 Presentation Outline Introduction CCIM Key Attributes CCIM Target Performance for Hanford WTP Applications EM Tank Waste R&D Plan Initiative 5.2.1  Scope and Objectives - CCIM Project CCIM Project - Proposed HLW Tasks and Milestones CCIM Project - Proposed LAW Tasks and Milestones CCIM Project - Summary FY10 Accomplishments CCIM Project - Anticipated Near-term Outcomes CCIM Project - Summary - Focus Areas Print Close > DOE EM Waste Processing Technical Exchange - Nov 16-18, 2010 - Atlanta, GA 4 DOE EM radwaste vitrification processing challenges are

19

Atlanta, Indiana: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Edit with form History Share this page on Facebook icon Twitter icon Atlanta, Indiana: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates...

20

The Atlanta VA Medical Center The Atlanta VA Medical Center http://www.atlanta.va.gov/careers/ is seeking candidates for a Speech  

E-Print Network (OSTI)

The Atlanta VA Medical Center The Atlanta VA Medical Center http regarding this position. The Atlanta VA Medical Center is comprised of 173 operating hospital beds and 100 at the Atlanta VA Medical Center. We are affiliated with the Emory University School of Medicine and are located

Peterson, Blake R.

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Clark Atlanta Universities (CAU) Energy Related Research Capabilities...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Clark Atlanta Universities (CAU) Energy Related Research Capabilities Clark Atlanta Universities (CAU) Energy Related Research Capabilities How energy related research has helped...

22

Siting and sizing of distributed generation units using GA and OPF  

Science Conference Proceedings (OSTI)

This paper deals with the important task of finding the optimal siting and sizing of Distributed Generation (DG) units for a given distribution network so that the cost of active and reactive power generation can be minimized. The optimization technique ... Keywords: distributed generation, genetic alghorithm(GA), optimal power flow(OPF)

M. Hosseini Aliabadi; M. Mardaneh; B. Behbahan

2008-01-01T23:59:59.000Z

23

Energy Impact of Residential Ventilation Norms in the United States  

E-Print Network (OSTI)

Refrigerating and Air Conditioning Engineers, Atlanta, GA.for Residential Winter and Summer Air Conditioning.Air Conditioning Contractors of America, Washington, DC. 10.

Sherman, Max H.; Walker, Iain S.

2007-01-01T23:59:59.000Z

24

Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Atlanta Airport Atlanta Airport Converts Shuttles to CNG to someone by E-mail Share Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Facebook Tweet about Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Twitter Bookmark Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Google Bookmark Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Delicious Rank Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Digg Find More places to share Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on AddThis.com... Sept. 9, 2012 Atlanta Airport Converts Shuttles to CNG L earn how an Atlanta company saves money and conserves fuel with compressed natural gas airport shuttles.

25

Microsoft Word - Transcript_Pre-2009 Congestion Study_Atlanta.doc  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7/29/2008 7/29/2008 Atlanta, GA Page 1 U.S. Department of Energy Pre-Congestion Study Regional Workshops for the 2009 National Electric Congestion Study Atlanta, GA July 29, 2008 9:00 a.m.-12:30 p.m. Transcript David Meyer: Ladies and gentlemen, I'm David Meyer from the Department of Energy. I want to welcome you to our workshop for upcoming 2009 congestion studies. I'm going to make a short presentation here scoping out what we have in mind and what our purposes are in holding this workshop. But, before I do that, I want to introduce some of my colleagues here, particularly Lot Cooke who is from our General Counsel's office. Several other people from my office at the Department of Energy: Mark Whitenton and Elliott Nethercutt; and Elizabeth

26

Atlanta Community Leaders' Institute Conference | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference April 15, 2013 - 1:31pm Addthis Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. What does this project do? Goal 1. Protect human health and the environment The Atlanta Community Leaders Institute (CLI) held a conference on February 8 and 9 at Morehouse School of Medicine, in Atlanta, Georgia. The conference was sponsored by the Medical University of South Carolina, U.S. Department of Energy, Southeastern Virtual Institute for Health and Wellness, U.S. Department of Defense, DeKalb County, Morehouse School of

27

Atlanta Community Leaders' Institute Conference | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference April 15, 2013 - 1:31pm Addthis Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. What does this project do? Goal 1. Protect human health and the environment The Atlanta Community Leaders Institute (CLI) held a conference on February 8 and 9 at Morehouse School of Medicine, in Atlanta, Georgia. The conference was sponsored by the Medical University of South Carolina, U.S. Department of Energy, Southeastern Virtual Institute for Health and Wellness, U.S. Department of Defense, DeKalb County, Morehouse School of

28

Making Connections for Atlanta Students | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Making Connections for Atlanta Students Making Connections for Atlanta Students Making Connections for Atlanta Students June 4, 2013 - 4:29pm Addthis Mary Shoemaker A rising senior at Georgia Tech Editor's note: In the last week in April, Director Dot Harris of the U.S. Department of Energy's Office of Economic Impact and Diversity gathered alongside local energy leaders at Clark Atlanta University for the Atlanta Students in Energy and Climate Forum. Mary Shoemaker, a rising senior at Georgia Tech, was one of the student speakers at the event. The following is her perspective of the event. On a beautiful afternoon in April, I found myself surrounded by like-minded individuals: students, entrepreneurs, and professors gathered to share experiences and motivations in their pursuit of environmental stewardship.

29

Microsoft Word - Atlanta Agenda FINAL _2_.doc  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Westin Peachtree Plaza Hotel Westin Peachtree Plaza Hotel Atlanta, Georgia July 29, 2008 AGENDA 8:00 - 9:00 am Registration 9:00 - 9:15 am DOE Presentation Plans for the 2009 Congestion Study and Objectives of Workshop 9:15 - 10:30 am Panel I Panelists: Cindy Miller, Senior Attorney, Office of General Counsel, Florida Public Service Commission The Honorable Jim Sullivan, President, Alabama Public Service Commission Charles Terreni, Executive Director, South Carolina Public Service Commission Burl D. Till, III, Manager, Transmission Planning Department, Tennessee Valley Authority The Honorable Stan Wise, Commissioner, Georgia Public Service Commission 10:30 -10:45 am Break 10:45 - 12:00 pm Panel II Panelists: George Bartlett, Director, Transmission Planning and Operations, Entergy Services

30

Residential Blink Charging Units Reporting Data in The EV Project  

NLE Websites -- All DOE Office Websites (Extended Search)

Blink Charging Units Reporting Data in The EV Project Project to Date through December 2012 Chicago 88 Atlanta 118 Philadelphia 37 Washington State 934 Oregon 632 San Francisco...

31

STATEMENT OF CONSIDERATIONS REQUEST BY ATLANTA GAS LIGHT AND...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

PLD-CHICAGO TEL:1 70 252 2779 P, 004 STATEMENT OF CONSIDERATIONS REQUEST BY ATLANTA GAS LIGHT AND ADSORBENT RESEARCH GROUP (AGLARG) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN...

32

Comparison of Methods for Estimating Mixing Height Used during the 1992 Atlanta Field Intensive  

Science Conference Proceedings (OSTI)

During the summer of 1992, measurements of the boundary layer mixing height were conducted at five locations around the city of Atlanta, Georgia, as part of the 1992 Atlanta Field Intensive of the Southern Oxidants Research Program on Ozone Non-...

Frank J. Marsik; Kenneth W. Fischer; Tracey D. McDonald; Perry J. Samson

1995-08-01T23:59:59.000Z

33

Microsoft Word - Final TEC Notes Atlanta 07.doc  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

TRANSPORTATION EXTERNAL COORDINATION WORKING GROUP MEETING January 31-February 1, 2007 Atlanta, Georgia Welcome and Meeting Overview The U.S. Department of Energy (DOE), Transportation External Coordination Working Group (TEC) held its 27th meeting on January 31-February 1, 2007, in Atlanta, Georgia. One hundred thirteen participants, representing national, State, Tribal, and local government; industry; professional organizations; and other interested parties, met to address a variety of issues related to DOE's radioactive materials transportation activities. The TEC process includes the involvement of these key stakeholders in developing solutions to DOE transportation issues through their actual participation in the work product. These members

34

Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Needs and Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting Atlanta, Georgia - March 16-18, 2011 May 2011 ii NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or

35

IEEE Energy2030 Atlanta, Georgia, USA  

E-Print Network (OSTI)

and power thermal units need to operate [10]. Fig. 1. Data flow of the proposed implementation. III. NETWORK plant. The meters monitor the output of wind power and the power consumption of each load. This information is reported to the ISO and to the power plant control center. A central scheduling controller uses

Oren, Shmuel S.

36

North Atlanta, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

North Atlanta, Georgia: Energy Resources North Atlanta, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.8651033°, -84.3365917° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.8651033,"lon":-84.3365917,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

37

Registration Open for National Environmental Justice Advisory Council (NEJAC) Public Meeting, September 11-12, 2013, Atlanta, Georgia  

Energy.gov (U.S. Department of Energy (DOE))

Registration Open for National Environmental Justice Advisory Council (NEJAC) Public Meeting, September 11-12, 2013, Atlanta, Georgia.

38

Energy Management Program at Atlanta Postal Service Distribution Center  

E-Print Network (OSTI)

The US Postal Service operates more than 38,000 post offices across the country and spends $350 million annually on utilities (1). Driven by President Clinton's 1999 Executive Order that mandates a 35 percent reduction in federal energy consumption by 2010, the Postal Service is aggressively pursuing energy savings (2). One long-range approach initiated in the Atlanta area is the implementation of MSE 2000, a structured management system for energy. MSE 2000 emphasizes training, development of standard operating procedures, energy monitoring, and team-based problem solving. Implementation activity at the Atlanta Bulk Mail Facility has included a gap analysis, selection of an implementation team, and initial training. During the first quarter of 2001, the energy manual, energy system work procedures and instructions, and energy team training will be completed. This will put the facility on target for formal registration of the management system in the third quarter of 2001. Improved operating and maintenance practices are expected to reduce energy usage by 5-10 percent, and the formal management system will help sustain the savings.

Brown, M.

2001-01-01T23:59:59.000Z

39

Statement by Energy Secretary Steven Chu on Opening of Atlanta Job Training  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Opening of Atlanta Job Opening of Atlanta Job Training Center Statement by Energy Secretary Steven Chu on Opening of Atlanta Job Training Center October 26, 2010 - 12:00am Addthis WASHINGTON, D.C. - U.S. Energy Secretary Steven Chu issued the following statement on today's grand opening of the Southeast Weatherization & Energy Efficiency Training (SWEET) Center in Atlanta, Georgia. "The SWEET Center in Atlanta will play a critical role in training thousands of workers for new jobs, laying the foundation for continued growth in this developing industry. With help from the Recovery Act, this program will provide workers with the skills they need to offer local homeowners quality energy efficiency upgrades that will save them money by saving energy." BACKGROUND INFORMATION ON TODAY'S ANNOUNCEMENT

40

Public Blink Charging Units Reporting Data in The EV Project  

NLE Websites -- All DOE Office Websites (Extended Search)

Blink Charging Units Reporting Data in The EV Project Project to Date through December 2012 Chicago 9 AC Level 2 Philadelphia Atlanta 10 AC Level 2 Washington D.C. 31 AC Level 2...

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Upper-Level Atmospheric Circulation Patterns and Ground-Level Ozone in the Atlanta Metropolitan Area  

Science Conference Proceedings (OSTI)

The purpose of this paper is to identify middle-troposphere circulation patterns associated with high ozone concentrations during JuneAugust of 200007 in the Atlanta, Georgia, metropolitan statistical area (MSA), which is located in the ...

Jeremy E. Diem; Melissa A. Hursey; Imani R. Morris; Amanda C. Murray; Ricardo A. Rodriguez

2010-11-01T23:59:59.000Z

42

Patterns and Causes of Atlanta's Urban Heat IslandInitiated Precipitation  

Science Conference Proceedings (OSTI)

Because of rapid growth and urbanization of Atlanta, Georgia, over the past few decades, the city has developed a pronounced urban heat island (UHI) that has been shown to enhance and possibly to initiate thunderstorms. This study attempts to ...

P. Grady Dixon; Thomas L. Mote

2003-09-01T23:59:59.000Z

43

Community transportation : alternative transportation provision in a low-income neighborhoods in southeast Atlanta  

E-Print Network (OSTI)

Regional transit agencies are ineffective at meeting many of the basic transportation needs of a clustered "Study Area" of low-income Atlanta neighborhoods. For transit dependant residents in the Study Area, getting to the ...

Alexander, James W., 1977-

2004-01-01T23:59:59.000Z

44

The Influence of Weather on Flight Operations at the Atlanta Hartsfield International Airport  

Science Conference Proceedings (OSTI)

The impact of various types of weather on aircraft operations for one airline for 3 yr at Atlanta Hartsfield International Airport is investigated. Impacts are expressed as delays defined in terms of the difference between the actual flight time ...

Peter J. Robinson

1989-12-01T23:59:59.000Z

45

Ga Air Compressor, Ga Air Compressor Products, Ga Air ...  

U.S. Energy Information Administration (EIA)

Ga Air Compressor, You Can Buy Various High Quality Ga Air Compressor Products from Global Ga Air Compressor Suppliers and Ga Air Compressor ...

46

Atlanta's Kent Igleheart Brings Home 2001 Outstanding Coordinator Award: Clean Cities Alternative Fuel Information Series Fact Sheet  

DOE Green Energy (OSTI)

Fact sheet includes an overview of the accomplishments of Atlanta's Clean Cities coordinator Kent Igleheart, who received the 2001 Outstanding Coordinator Award.

LaRocque, T.

2001-08-21T23:59:59.000Z

47

Atlanta Suburb Greases the Path to Savings with Biodiesel | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta Suburb Greases the Path to Savings with Biodiesel Atlanta Suburb Greases the Path to Savings with Biodiesel Atlanta Suburb Greases the Path to Savings with Biodiesel December 7, 2011 - 3:33pm Addthis Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Chris Galm Marketing & Communications Specialist, Office of Energy Efficiency & Renewable Energy What does this project do? Reduces fuel consumption Saves the city money Extends the lifespan of city owned service vehicles "We sat down and actually met with several people out of the biodiesel industry and found out how amazingly simple it was for us to do this. To

48

Atlanta Suburb Greases the Path to Savings with Biodiesel | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta Suburb Greases the Path to Savings with Biodiesel Atlanta Suburb Greases the Path to Savings with Biodiesel Atlanta Suburb Greases the Path to Savings with Biodiesel December 7, 2011 - 3:33pm Addthis Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Chris Galm Marketing & Communications Specialist, Office of Energy Efficiency & Renewable Energy What does this project do? Reduces fuel consumption Saves the city money Extends the lifespan of city owned service vehicles "We sat down and actually met with several people out of the biodiesel industry and found out how amazingly simple it was for us to do this. To

49

Microsoft PowerPoint - Clark Atlanta DOE MEI Small Business presentation August 2009 for pdf.ppt [Compatibility Mode]  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

CLARK ATLANTA UNIVERSITY CLARK ATLANTA UNIVERSITY CLARK ATLANTA UNIVERSITY Presentation at the Presentation at the CLARK ATLANTA UNIVERSITY CLARK ATLANTA UNIVERSITY Presentation at the Presentation at the 10 10 th th Annual DOE MEI Small Business Conference Annual DOE MEI Small Business Conference CAU's Energy Related Research Capabilities CAU's Energy Related Research Capabilities 10 10 th th Annual DOE MEI Small Business Conference Annual DOE MEI Small Business Conference CAU's Energy Related Research Capabilities CAU's Energy Related Research Capabilities Ishrat M Khan Ph.D. Ishrat M Khan Ph.D. Ishrat M Khan Ph.D. Ishrat M Khan Ph.D. Director, Center for Functional Director, Center for Functional Nanoscale Nanoscale Materials Materials ikhan@cau.edu ikhan@cau.edu www cau edu/research www

50

Field Demonstration of a High-Efficiency Packaged Rooftop Air Conditioning Unit at Fort Gordon, Augusta, GA  

Science Conference Proceedings (OSTI)

As part of a larger program targeting the market transformation of packaged rooftop air conditioning, five high-efficiency rooftop air conditioning products were selected in 2002 by the U.S. Department of Energy (DOE) under the Unitary Air Conditioner (UAC) Technology Procurement (http://www.pnl.gov/uac). In February 2003, Fort Gordon in Augusta, Georgia was chosen as the demonstration site. With the goal of validating the field performance and operation of one of the awarded products, a 10-ton high-efficiency packaged rooftop unit (RTU) manufactured by Global Energy Group (GEG) was installed at Fort Gordon in October 2003. Following equipment installation, power metering, air- and refrigerant-side instrumentation was installed on the GEG RTU and a 4-year old typical-efficiency 20-ton RTU manufactured by AAON . The GEG and AAON units were instrumented identically and operated May through July, 2005, to observe performance under a range of conditions. Based on the data collected as part of this demonstration, the GEG equipment performed at least 8% better in stage-1 (single compressor running) cooling and at least 16% better in stage-2 (both compressors running) than the baseline AAON equipment. Performance comparisons are based on what we call application EER normalized to equivalent specific fan power. The full-load, specific-fan-power-normalized application EERs at ARI design conditions were 10.48 Btu/Wh for the GEG and 9.00 Btu/Wh for the baseline machine. With a cost premium of nearly 50%, and slightly higher maintenance costs, the life-cycle cost analysis shows that the GEG technology pays for itself--a positive net-present value (NPV)--only in climates and buildings with long cooling seasons. Manufacture of this equipment on a larger scale can be expected to reduce costs to the point where it is more broadly cost-effective. The assumed 10-ton baseline and new-technology unit costs are $3824.00 and $5525.00 respectively. If the new technology cost is assumed to drop as sales increase to $4674.50 for a 10-ton unit (i.e. the original cost difference is halved), the life-cycle costs improve. A grid of first cost, annual maintenance cost and electricity price is enumerated and the results presented in the report show the sensitivity of life cycle cost to these three financial parameters in each of eight different climates.

Armstrong, Peter R.; Sullivan, Gregory P.; Parker, Graham B.

2006-03-31T23:59:59.000Z

51

A Dynamic GISMulticriteria Technique for Siting the NASAClark Atlanta Urban Rain Gauge Network  

Science Conference Proceedings (OSTI)

Because Atlanta, Georgia, is a model of rapid transition from forest/agriculture land use to urbanization, NASA and other agencies have initiated programs to identify and understand how urban heat islands (UHIs) impact the environment in terms of ...

J. Marshall Shepherd; Olayiwola O. Taylor; Carlos Garza

2004-09-01T23:59:59.000Z

52

Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011  

SciTech Connect

This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

2011-05-01T23:59:59.000Z

53

Feasibility Study of Social Media to Reduce Intimate Partner Violence Among Gay Men in Metro Atlanta, Georgia  

E-Print Network (OSTI)

was administered via Facebook. Ninety-nine usable surveyssocial media, specifically Facebook, is a feasible method ofViolence in Atlanta to a Facebook group dedicated to the gay

Strasser, Sheryl M; Smith, Megan; Pendrick-Denney, Danielle; Boos-Beddington, Sarah; Chen, Ken; McCarty, Frances

2012-01-01T23:59:59.000Z

54

STATEMENT OF CONSIDERATIONS REQUEST BY ATLANTA GAS LIGHT AND ADSORBENT RESEARCH  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

AUub. -5'94(THU) 14:09 DO PLD-CHICAGO TEL:1 70 252 2779 P, 004 AUub. -5'94(THU) 14:09 DO PLD-CHICAGO TEL:1 70 252 2779 P, 004 STATEMENT OF CONSIDERATIONS REQUEST BY ATLANTA GAS LIGHT AND ADSORBENT RESEARCH GROUP (AGLARG) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER SUBCONTRACT NO. 466590 AT BROOKHAVEN NATIONAL LABORATORY; W(A) -9421, CH-0839 The Atlanta Gac Light and Adsorbent Rcscarch Group (AGLARG), a large business coneortium, hao petitioned for an advance waiver of patent rights under its Subcontract No. 466590 from Brookhaven National Laboratory, operated by Associated Univeraitico, Inc. under DOE Contract No. DE-AC02-76CH00016. The purpooc of this subcontract includes the design, fabrication, testing and demonstration of a fuel storage and fuel delivery system for at least two natural gas powered engines in light duty vehicles

55

Reinforced Plastics/Composites Institute, Annual Conference, 41st, Atlanta, GA, January 27-31, 1986, Preprint  

Science Conference Proceedings (OSTI)

The present conference on composite materials technologies encompasses topics in pultrusion techniques and products, matrix-reinforcement interface characteristics, filament winding and ply layup processes, resin curing cycles, marine applications, and reinforced thermoplastics. Also discussed are reaction injection molding processes, transportation applications, product markets, fillers and additives, testing methods, sheet molding compounds, corrosion prevention, design methods, basic research and development topics, and structural applications.

Not Available

1986-01-01T23:59:59.000Z

56

Prevailing Wind in the Meteor Zone (80100 km) over Atlanta and its Association with Midwinter Stratospheric Warming  

Science Conference Proceedings (OSTI)

The wind data generated by an all sky, continuous wave radio meteor wind facility at Atlanta (34N, 84W) is analyzed over the period of August 1974 through July 1975. Zonal and meridional components of the prevailing wind over the height range ...

Prakash M. Dolas; R. G. Roper

1981-01-01T23:59:59.000Z

57

Microsoft PowerPoint - 9-05 Lutze LUTZE - Atlanta Nov 2010.ppt  

NLE Websites -- All DOE Office Websites (Extended Search)

DuraLith Geopolymer Low DuraLith Geopolymer Low Temperature Waste Forms Werner Lutze, Weiliang Gong, and Ian L. Pegg Vitreous State Laboratory The Catholic University of America Washington, DC EM Waste Processing Technical Exchange Atlanta , , Nov. 16 - 18, 2010 Print Close 2 DuraLith Geopolymer Low Temperature Waste Forms A Geopolymer is .... .... an inorganic solid formed by poly-condensation: NaOH n{-O-Si-OH + HO-Al-O-}  {-O-Si-O-Al-O-} n + nH 2 O General formula: (Na,K) n [(SiO 2 ) z -AlO 2 ] n ·wH 2 O 'w' << 1 1≤ z ≤ 3 Print Close 3 DuraLith Geopolymer Low Temperature Waste Forms Geopolymers ....  ... can be made at room temperature from any reactive aluminosilicate with alkali hydroxide or alkali polysilicates  ... contain very little water after complete hardening  ... are resistant to acids

58

Highlights of the solar total energy systems, distributed collector systems, and research and development projects. Semiannual review, 26-27 January 1976, Atlanta, Georgia  

DOE Green Energy (OSTI)

The highlights of the ERDA Solar Thermal Branch Semiannual Review held in Atlanta, Georgia, on January 26-27, 1976, are presented. Status and plans for Total Energy Systems, Distributed Collectors, and Research and Development Projects are reviewed. (WHK)

Latta, A.F.

1976-03-26T23:59:59.000Z

59

China Ga Air Compressor, China Ga Air Compressor Products ...  

U.S. Energy Information Administration (EIA)

China Ga Air Compressor, China Ga Air Compressor Suppliers and Manufacturers Directory - Source a Large Selection of Ga Air Compressor Products at ...

60

Profile of motor-vehicle fleets in Atlanta 1994. Assessing the market for alternative-fuel vehicles  

Science Conference Proceedings (OSTI)

This document reports the results of the EIA survey of motorvehicle fleets, both private and municipal, in Atlanta. These data should be useful to those whose goal is to assist or participate in the early development of alternative-fuel vehicle markets. The data also should be useful to persons implementing motor-vehicle-related clean air programs or analyzing transportation energy use. Persons in the petroleum industry will find useful information regarding conventional fuels and the fuel-purchasing behavior of fleets.

NONE

1995-11-06T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

An Eight-Year Lightning Climatology of the Southeast United States Prepared for the 1996 Summer Olympics  

Science Conference Proceedings (OSTI)

The 1996 Summer Olympics will be held in the Atlanta, Georgia, vicinity and several other sites in the southeast United States between 19 July and 4 August 1996. This period coincides with the peak thunderstorm season, so the threat of lightning ...

Andrew I. Watson; Ronald L. Holle

1996-05-01T23:59:59.000Z

62

Technical report. Graduate Student Focus on Diversity Workshop, 1999 SIAM Annual Meeting, Atlanta, Georgia, May 12, 1999  

SciTech Connect

The Third SIAM Graduate Student Focus on Diversity workshop was held May 12 at the Sheraton Atlanta Hotel on the first day of the 1999 SIAM Annual Meeting. The day-long workshop consisted of several different activities: eight technical talks by under-represented minority graduate students, a lively panel discussion concerning the benefits of undergraduate summer research programs, informal luncheon and pizza breaks to foster social interaction, and an evening forum with candid discussions of graduate school experiences from a minority graduate student perspective. These sessions were open to the entire SIAM community and served to highlight the progress, achievements, and aspirations of the workshop participants.

1999-05-12T23:59:59.000Z

63

Ba-Ga (Barium - Gallium)  

Science Conference Proceedings (OSTI)

Ba-Ga crystallographic data...Ba-Ga crystallographic data Phase Composition, wt% Ga Pearson symbol Space group (Ba) 0 cI 2 Im m Ba 10 Ga 4.8 cF 176 Fd m Ba 8 Ga 7 30.8 cP 60 P 2 1 3 BaGa 2 50.4 hP 3 P 6/ mmm BaGa 4 67 tI 10 I 4/ mmm (Ga) 100 hP 2 P 6 3 / mmc...

64

Urban airshed modeling of air quality impacts of alternative transportation fuel use in Los Angeles and Atlanta  

DOE Green Energy (OSTI)

The main objective of NREL in supporting this study is to determine the relative air quality impact of the use of compressed natural gas (CNG) as an alternative transportation fuel when compared to low Reid vapor pressure (RVP) gasoline and reformulated gasoline (RFG). A table lists the criteria, air toxic, and greenhouse gas pollutants for which emissions were estimated for the alternative fuel scenarios. Air quality impacts were then estimated by performing photochemical modeling of the alternative fuel scenarios using the Urban Airshed Model Version 6.21 and the Carbon Bond Mechanism Version IV (CBM-IV) (Geary et al., 1988) Using this model, the authors examined the formation and transport of ozone under alternative fuel strategies for motor vehicle transportation sources for the year 2007. Photochemical modeling was performed for modeling domains in Los Angeles, California, and Atlanta, Georgia.

NONE

1997-12-01T23:59:59.000Z

65

In Proceedings of the 1999 IEEE/ASME International Conference on Advanced Intelligent Mechatronics, Atlanta, GA. Abstract Advanced mechatronic systems increasingly are  

E-Print Network (OSTI)

components of this equipment work together to perform the intricate processing and transport operations be an expensive proposition. For example, estimates place the capital cost of a new semiconductor fab at well over.g., [6, 8, 17]). Second, to help justify equipment capital costs, flexibly automated systems must operate

66

Ga-Zr (Gallium - Zirconium)  

Science Conference Proceedings (OSTI)

Ga-Zr crystallographic data...Ga 5 Zr 3 44.0 oC 32 Cmcm Ga 3 Zr 2 47 oF 40 Fdd 2 βGaZr 56.7 ? ? αGaZr 56.7 tI 16 I 4 1 / amd Ga 4 Zr 5 62.1 hP 18 P 6 3 / mcm Ga 2 Zr 3 66 tP 10 P 4/ mbm Ga 3 Zr 5 68.6 hP 16 P 6 3 / mcm GaZr 2 72.4 tI 12 I 4/ mcm (βZr) ~94 to 100 cI 2 Im m (αZr) 99.4 to 100 hP 2 P 6 3 / mmc...

67

Southern Company Photovoltaic Evaluation in Atlanta: Analysis of Field Data from Seven 4-kW PV Systems at Georgia Power Headquarters During 20102012  

Science Conference Proceedings (OSTI)

Seven photovoltaic (PV) power systems using different module technologies were installed on the rooftop of Georgia Powers headquarters in Atlanta. This report describes the output performance of these small-scale systems (about 4 kW each) relative to the available solar resource at the site. The main objective of this evaluation has been to assess performance characteristics of commercially available module technologies in a southeastern U.S. climate. To ensure a reliable comparison, all ...

2013-01-28T23:59:59.000Z

68

AlGaN/GaN-based power semiconductor switches  

E-Print Network (OSTI)

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

69

Economic evaluation of the Annual Cycle Energy System. Volume I. Executive summary. Final report. [In Minneapolis, Atlanta, and Philadelphia  

Science Conference Proceedings (OSTI)

The objective of this study is to determine the energy effectiveness and the economic viability of the ACES concept. Three different classes of building are investigated, namely: single-family residence; multi-family residence; and commercial office building. The application of ACES to each of these building types is studied in three different climatic regions: Minneapolis, Atlanta, and Philadelphia. Computer programs - ACESIM for the residences and CACESS for the office building - were used, each comprised of four modules: loads; design; simulation; and economic. For each building type in each geographic location, the economic evaluation of the ACES is based on a comparison of the present worth of the ACES to the present worth of a number of conventional systems. The results of this analysis indicate that the economic viability of the ACES is very sensitive to the assumed value of the property tax, maintenace cost, and fuel-escalation rates, while it is relatively insensitive to the assumed values of other parameters. Fortunately, any conceivable change in the fuel-escalation rates would tend to increase the viability of the ACES concept. An increase in the assumed value of the maintenance cost or property tax would tend to make the ACES concept less viable; a decrease in either would tend to make the ACES concept more viable. The detailed results of this analysis are given in Section 5.4 of Volume II. 2 figures, 21 tables.

Not Available

1980-05-01T23:59:59.000Z

70

Polarization-engineered GaN/InGaN/GaN tunnel diodes  

E-Print Network (OSTI)

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

2010-08-24T23:59:59.000Z

71

Low cost high power GaSB photovoltaic cells  

Science Conference Proceedings (OSTI)

High power density and high capacity factor are important attributes of a thermophotovoltaics (TPV) system and GaSb cells are enabling for TPV systems. A TPV cogeneration unit at an off grid site will compliment solar arrays producing heat and electricity on cloudy days with the solar arrays generating electricity on sunny days. Herein

Lewis M. Fraas; Han X. Huang; Shi-Zhong Ye; She Hui; James Avery; Russell Ballantyne

1997-01-01T23:59:59.000Z

72

Low cost high power GaSb thermophotovoltaic cells  

Science Conference Proceedings (OSTI)

High power density and high capacity factor are important attributes of a TPV system and GaSb cells are enabling for TPV systems. A TPV cogeneration unit at an off grid site will compliment solar arrays producing heat and electricity on cloudy days with the solar arrays generating electricity on sunny days. Herein

Lewis M. Fraas; Han X. Huang; Shi-Zhong Ye; James Avery; Russell Ballantyne

1997-01-01T23:59:59.000Z

73

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

74

Unit Conversion  

Science Conference Proceedings (OSTI)

Unit Conversion. ... Unit Conversion Example. "If you have an amount of unit of A, how much is that in unit B?"; Dimensional Analysis; ...

2012-12-04T23:59:59.000Z

75

NETL F 451.1/1-1, Categorical Exclusion Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta Alternative Fuel and Advanced Technology Vehicle Project Install compressed natural gas fueling station at 4420 Buford Hwy. Atlanta, GA. Steven Richardson Digitally...

76

NETL F 451.1-1/1 Categorical Exclusion (CX) Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA INSTALLATION OF RETAIL BIOFUEL INFRASTRUCTURE SUPPORTING I-75 GREEN CORRIODOR PROJECT Installation of E85 fueling infrastructure in Atlanta, Georgia. 02 16 2011 Steven...

77

united stadium. united station.  

E-Print Network (OSTI)

??DC United is one of Major League Soccers most decorated franchises, yet it still plays its home games within the crumbling confines of RFK Stadium. (more)

Groff, David R.

2011-01-01T23:59:59.000Z

78

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

79

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name GA-SNC Solar Place Nevada Sector Solar Product Nevada-based PV project developer and joint venture of GA-Solar North America and...

80

SciTech Connect: "fuel cells"  

Office of Scientific and Technical Information (OSTI)

fuel cells" Find fuel cells" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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81

SciTech Connect: plasma  

Office of Scientific and Technical Information (OSTI)

plasma Find plasma Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

82

SciTech Connect: "enriched uranium"  

Office of Scientific and Technical Information (OSTI)

enriched uranium" Find enriched uranium" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

83

SciTech Connect: "oil shale"  

Office of Scientific and Technical Information (OSTI)

oil shale" Find oil shale" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

84

SciTech Connect: "higgs boson"  

Office of Scientific and Technical Information (OSTI)

higgs boson" Find higgs boson" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

85

SciTech Connect: "geomagnetic storms"  

Office of Scientific and Technical Information (OSTI)

geomagnetic storms" Find geomagnetic storms" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

86

SciTech Connect: enriched uranium  

Office of Scientific and Technical Information (OSTI)

enriched uranium Find enriched uranium Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

87

SciTech Connect: auroras  

Office of Scientific and Technical Information (OSTI)

auroras Find auroras Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

88

SciTech Connect: "plasma science"  

Office of Scientific and Technical Information (OSTI)

plasma science" Find plasma science" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

89

SciTech Connect: "Greenhouse Effect"  

Office of Scientific and Technical Information (OSTI)

Greenhouse Effect" Find Greenhouse Effect" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

90

SciTech Connect: higgs  

Office of Scientific and Technical Information (OSTI)

higgs Find higgs Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

91

Current and historical trends in general aviation in the United States  

E-Print Network (OSTI)

General aviation (GA) is an important component of aviation in the United States. In 2011, general aviation and air taxi operations represented 63% of all towered operations in the United States, while commercial aviation ...

Shetty, Kamala Irene

2012-01-01T23:59:59.000Z

92

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures  

Science Conference Proceedings (OSTI)

The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition of GaAs of the same nominal thickness leads to the formation of pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed GaAs/GaP self-assembled quantum dots (SAQDs), or pseudomorphic GaAsP/GaP SAQDs depending on the growth temperature. We demonstrate that the atomic structure of Ga(As,P)/GaP heterostructures is ruled by the temperature dependence of adatom diffusion rate and GaAs-GaP intermixing. The band alignment of pseudomorphic GaAs/GaP QW and GaAsP/GaP SAQDs is shown to be of type II, in contrast to that of fully relaxed GaAs/GaP SAQDs, which have the band alignment of type I with the lowest electronic states at the indirect L valley of the GaAs conduction band.

Abramkin, D. S.; Putyato, M. A.; Budennyy, S. A.; Gutakovskii, A. K.; Semyagin, B. R.; Preobrazhenskii, V. V.; Shamirzaev, T. S. [A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Pr. Lavrentyeva 13, 630090 Novosibirsk (Russian Federation); Kolomys, O. F.; Strelchuk, V. V. [V. E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, Pr. Nauki 41, 03028 Kiev (Ukraine)

2012-10-15T23:59:59.000Z

93

General Atomics (GA) Fusion News: A New Spin on Understanding...  

NLE Websites -- All DOE Office Websites (Extended Search)

General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New...

94

Rodefeld Landfill Ga Biomass Facility | Open Energy Information  

Open Energy Info (EERE)

Rodefeld Landfill Ga Biomass Facility Jump to: navigation, search Name Rodefeld Landfill Ga Biomass Facility Facility Rodefeld Landfill Ga Sector Biomass Facility Type Landfill Gas...

95

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

96

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

97

Legend Units  

Science Conference Proceedings (OSTI)

... Syntax: LEGEND UNIT units> where is an integer number or parameter in the range 1 to 100 that specifies the legend identifier; and ...

2013-11-27T23:59:59.000Z

98

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures  

Science Conference Proceedings (OSTI)

GaAsBi/GaAs/AlGaAs separate confinement heterostructures are grown using an asymmetric temperature profile due to the low optimal growth temperature of GaAsBi; the bottom AlGaAs barrier is grown at 610 Degree-Sign C, while the GaAsBi quantum well and the top AlGaAs barrier are grown at 320 Degree-Sign C. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that this approach results in samples with excellent structural and optical properties. The high quality of the low temperature AlGaAs barrier is attributed to the presence of Bi on the surface as indicated by a (1 Multiplication-Sign 3) surface reconstruction persisting throughout the low temperature growth.

Fan Dongsheng; Yu Shuiqing [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Zeng Zhaoquan; Hu Xian; Dorogan, Vitaliy G.; Li Chen; Benamara, Mourad; Hawkridge, Michael E.; Mazur, Yuriy I.; Salamo, Gregory J. [Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Johnson, Shane R. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States); Wang, Zhiming M. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

2012-10-29T23:59:59.000Z

99

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

DOE Green Energy (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

100

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells  

E-Print Network (OSTI)

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells I. Friel, C online 20 June 2005 An ultraviolet electroabsorption modulator based on AlGaN/GaN quantum wells is demonstrated. Enhanced excitonic absorption in the quantum wells at around 3.48 eV was achieved using

Moustakas, Theodore

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

102

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

Science Conference Proceedings (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

103

Development of a Residential Integrated Ventilation Controller  

E-Print Network (OSTI)

Refrigerating, and Air-Conditioning Engineers, Atlanta, GA.Refrigerating, and Air-Conditioning Engineers, Atlanta, GA.of Ventilation and Air Conditioning: Is CERN up to Date With

Walker, Iain

2013-01-01T23:59:59.000Z

104

English Units  

Science Conference Proceedings (OSTI)

English Units. A, B, C, D, E, F, G, H, I, J. 1, Steam Point Calculator: English Units, ... 6, Height of steam point apparatus above ground (ft.), 0, ft. ...

2011-12-22T23:59:59.000Z

105

Unit Conversions  

Science Conference Proceedings (OSTI)

... volume flow units, which contain "atm", assume that the gas is: ideal; at a pressure of 101325 Pa; at a temperature of 0 C. Be aware that the unit "atm ...

2012-10-02T23:59:59.000Z

106

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures  

Science Conference Proceedings (OSTI)

Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

2012-12-24T23:59:59.000Z

107

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents (OSTI)

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

108

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

109

Acceleration methods for image super-resolution  

E-Print Network (OSTI)

, Atlanta, GA, USA (2000) 43­49 18. Franchi, D., Belardinelli, A., Palagi, G., Ripoli, A., Bedini, R.: New

Cooperstock, Jeremy R.

110

Infiltration Effects on Residential Pollutant Concentrations for Continuous and Intermittent Mechanical Ventilation Approaches  

E-Print Network (OSTI)

2009). 2009 ASHRAE Handbook - Fundamentals. Atlanta, GA.the ASHRAE (2009) Handbook of Fundamentals, a mass balance

Sherman, Max

2010-01-01T23:59:59.000Z

111

Dietary Supplement Laboratory Quality Assurance Program  

Science Conference Proceedings (OSTI)

... MD Food and Drug Administration, Atlanta, GA Food and ... Wheatridge, CO Medallion Laboratories, Minneapolis, MN Natural Factors Nutritional ...

2013-09-24T23:59:59.000Z

112

GA-GPU: extending a library-based global address spaceprogramming model for scalable heterogeneouscomputing systems  

Science Conference Proceedings (OSTI)

Scalable heterogeneous computing (SHC) architectures are emerging as a response to new requirements for low cost, power efficiency, and high performance. For example, numerous contemporary HPC systems are using commodity Graphical Processing Units (GPU) ... Keywords: armci, ga, gas, global address space, global arrays, gpu, nwchem, pgas

Vinod Tipparaju; Jeffrey S. Vetter

2012-05-01T23:59:59.000Z

113

passivation of InGaN/GaN nanopillar light emitting diodes.  

E-Print Network (OSTI)

??Recently, InGaN/GaN based blue light emitting diodes (LEDs) have become widely available commercially, but their efficiency is reduced due to the quantum confined Stark effect (more)

Choi, Won

2013-01-01T23:59:59.000Z

114

Detailed Analysis of Temperature Characteristics of InGaP/InGaAs ...  

Science Conference Proceedings (OSTI)

The current-voltage (I-V) characteristics of single-junction solar cells (InGaP, InGaAs, Ge solar cells) were measured at various temperatures. The structures of ...

115

AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy  

SciTech Connect

The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

C.A. Wang; C.J. Vineis; D.R. Calawa

2002-02-13T23:59:59.000Z

116

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw compressors, 30-90 kW / 40-125 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

117

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors ...  

U.S. Energy Information Administration (EIA)

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors, 11-30 kW / 15-40 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

118

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw compressors, 90-160 kW / 125-200 hp.,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading ...

119

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells  

E-Print Network (OSTI)

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells Shunfeng Li Cubic InGaN/GaN multi-quantum-wells MQWs with high structural and optical quality are achieved by utilizing freestanding 3C-SiC 001 substrates and optimizing InGaN quantum well growth. Superlattice peaks up

As, Donat Josef

120

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT  

Science Conference Proceedings (OSTI)

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

Lenka, T. R., E-mail: trlenka@gmail.com; Panda, A. K., E-mail: akpanda62@hotmail.com [National Institute of Science and Technology, Palur Hills (India)

2011-05-15T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Quantized states in homogenous polarized GaInN GaN quantum wells  

E-Print Network (OSTI)

Quantized states in homogenous polarized GaInN GaN quantum wells C. Wetzel1, S. Kamiyama1, H. Amano wells is calculated in a single particle model. The act- ing electric eld in the wells and the band gap-dimensional well layers our approach is based on induction from results obtained at the binary GaN barri- ers

Wetzel, Christian M.

122

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS  

E-Print Network (OSTI)

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS C. Wetzel, T. Takeuchi, H. Amano, and IInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across

Wetzel, Christian M.

123

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells  

E-Print Network (OSTI)

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells Marcus Eickhoff* and Dieter Suter, nanometer-sized quantum wells possible with excellent sensitivity and selectivity while avoiding.60.-k; 78.55.Cr; 78.67.De Keywords: ODNMR; Pulsed excitation; Quantum well; GaAs 1. Introduction Nuclear

Suter, Dieter

124

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network (OSTI)

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Recanati, Catherine

125

Princeton Plasma Physics Lab - General Atomics (GA)  

NLE Websites -- All DOE Office Websites (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
126

TMS P&GA Wired to Washington  

Science Conference Proceedings (OSTI)

P & GA COMMITTEE HOME ... the connection between MSE and such key U.S. initiatives as national security, energy independence, and economic growth.

127

X-ray diffraction study of (TlInSe{sub 2}){sub 1-x}(TlGaTe{sub 2}){sub x} crystal system  

Science Conference Proceedings (OSTI)

The crystallographic and dynamic characteristics of TlInSe{sub 2} and TlGaTe{sub 2} crystals have been studied by X-ray diffraction in the temperature range of 85-320 K. The temperature dependences of the unit-cell parameters a of TlInSe{sub 2} and TlGaTe{sub 2} crystals, as well as their coefficients of thermal expansion along the [100] direction, are determined. The concentration dependences of the unit-cell parameters a and c for (TlInSe{sub 2}){sub 1-x}(TlGaTe{sub 2}){sub x} crystals are measured. Anomalies are found in the temperature dependences of the unit-cell parameters a and, correspondingly, the coefficient of thermal expansion, indicating the existence of phase transitions in TlInSe{sub 2} and TlGaTe{sub 2} crystals.

Sheleg, A. U., E-mail: sheleg@ifttp.bas-net.by; Zub, E. M.; Yachkovskii, A. Ya. [National Academy of Sciences of Belarus, State Scientific and Production Association, Scientific and Practical Materials Research Center (Belarus); Mustafaeva, S. N.; Kerimova, E. M. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan)

2012-03-15T23:59:59.000Z

128

Y2, Threading Defect Elimination in GaN Nanostructures  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

129

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

DOE Green Energy (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

130

Price of Elba Island, GA Liquefied Natural Gas Total Imports...  

Annual Energy Outlook 2012 (EIA)

Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet) Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet)...

131

Metric Units  

Science Conference Proceedings (OSTI)

... A, B, C, D, E, F, G, H, I, J. 1, Steam Point Calculator: Metric Units, Elevation Converter, ... 6, Height of steam point apparatus above ground (m), 0, m, ...

2011-12-22T23:59:59.000Z

132

United States  

Office of Legacy Management (LM)

- I - I United States Department of Energy D lSCk Al M E R "This book was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise, does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency

133

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

134

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

135

ga_50m_wind  

NLE Websites -- All DOE Office Websites (Extended Search)

DataTechnologySpecificUnitedStatesWindHighResolutionGeorgiaWindHighResolution.zip> Description: Abstract: Annual average wind resource potential for the state of Georgia...

136

AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE  

SciTech Connect

An AlGaAs/GaAs resonant tunneling diode (RTD) with submicron size was fabricated on {l_brace}111{r_brace} oblique facets of GaAs with selective MBE. The method is based on the fact that a certain facet structure is formed on a patterned substrate in selective MBE because the growth rate depends strongly on the facet structure. The fabrication of a double-barrier structure was attempted on a {l_brace}111{r_brace}B facet. The current-voltage characteristics of the sample showed negative differential resistance at 77K demonstrating that we have achieved an RTD on a submicron facet.

Nishiwaki, T.; Yamaguchi, M.; Sawaki, N. [Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464-8603 (Japan)

2007-04-10T23:59:59.000Z

137

United States  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

BP Energy Company BP Energy Company OE Docket No. EA- 3 14 Order Authorizing Electricity Exports to Mexico Order No. EA-3 14 February 22,2007 BP Energy Company Order No. EA-314 I. BACKGROUND Exports of electricity from the United States to a foreign country are regulated by the Department of Energy (DOE) pursuant to sections 301(b) and 402(Q of the Department of Energy Organization Act (42 U.S.C. 7 15 l(b), 7172(f)) and require authorization under section 202(e) of the Federal Power Act (FPA) (16 U.S.C.S24a(e)) . On May 22,2006, BP Energy Company (BP Energy) applied to DOE for an authorization to transmit electric energy from the United States to Mexico as a power marketer. BP Energy proposes to purchase surplus electric energy from electric utilities and other suppliers within the United States and to export that energy to ~Mexico. The cnergy

138

United States  

Office of Legacy Management (LM)

Office of Research and EPA 600/R-941209 Environmental Protection Development January 1993 Agency Washington, DC 20460 Offsite Environmental 57,,7 Monitoring Report Radiation Monitoring Around United States Nuclear Test Areas, Calendar Year 1992 UNITED STATES ENVIRONMENTAL PROTECTION AGENCY OFFICE OF RESEARCH AND DEVELOPMENT ENVIRONMENTAL MONITORING SYSTEMS LABORATORY-LAS VEGAS P.O. BOX 93478 LAS VEGAS. NEVADA 891 93-3478 702/798-2100 Dear Reader: Since 1954, the U.S. Environmental Protection Agency (EPA) and its predecessor the U.S, Public Health Service (PHs) has conducted radiological monitoring in the offsite areas around United States nuclear test areas. The primary objective of this monitoring has been the protection of the health and safety of

139

Accelerated aging of GaAs concentrator solar cells  

DOE Green Energy (OSTI)

An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

Gregory, P.E.

1982-04-01T23:59:59.000Z

140

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence  

E-Print Network (OSTI)

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence October 1997; accepted for publication 5 January 1998 Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed

Bowers, John

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While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
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141

Optical injection and coherent control of a ballistic charge current in GaAsAlGaAs quantum wells  

E-Print Network (OSTI)

Optical injection and coherent control of a ballistic charge current in GaAs?AlGaAs quantum wells of Hache´ et al.,2,3 but in this article we report injection into the plane of GaAs/AlGaAs quantum wells specific to quantum wells. Although we expect the underlying physics of injection and control of currents

Sipe,J. E.

142

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network (OSTI)

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

143

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures  

E-Print Network (OSTI)

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode and GaInN/GaN heterostructures typically used for high efficiency light emitting diodes is of high materials for green, blue, and UV light emitting diodes (LED) [1-2]. It is known that huge piezoelectric

Wetzel, Christian M.

144

Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

( gate=nickel)/(barrier=GaN/Al (y) Ga (1?y) N)/(buffer=GaN)/(substrate=SiC ) polarizationinduced high electron mobility transistors (PI-HEMTs) show promise for ultrahigh power microwave amplification. The polarization fields in these Ga-face

Lester F. Eastman

1999-01-01T23:59:59.000Z

145

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

146

J1, MBE Growth of Metamorphic InGaP on GaAs and GaP for Wide ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

147

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics  

Science Conference Proceedings (OSTI)

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO"2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium lamp ... Keywords: GaN, HEMT, MQW, Photo-chemical vapor deposition, SiO 2

Kai-Hsuan Lee; Ping-Chuan Chang; Shoou-Jinn Chang

2013-04-01T23:59:59.000Z

148

Free carrier accumulation at cubic AlGaN/GaN heterojunctions  

Science Conference Proceedings (OSTI)

Cubic Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructures were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. A profile of the electrostatic potential across the cubic-AlGaN/GaN heterojunction was obtained using electron holography in the transmission electron microscope. The experimental potential profile indicates that the unintentionally doped layers show n-type behavior and accumulation of free electrons at the interface with a density of 5.1 x 10{sup 11}/cm{sup 2}, about one order of magnitude less than in wurtzite AlGaN/GaN junctions. A combination of electron holography and cathodoluminescence measurements yields a conduction-to-valence band offset ratio of 5:1 for the cubic AlGaN/GaN interface, which also promotes the electron accumulation. Band diagram simulations show that the donor states in the AlGaN layer provide the positive charges that to a great extent balance the two-dimensional electron gas.

Wei, Q. Y.; Li, T.; Huang, J. Y.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Tschumak, E.; Zado, A.; As, D. J. [Department of Physics, Universitaet Paderborn, D-33098 Paderborn (Germany)

2012-04-02T23:59:59.000Z

149

L1, Formation of Structural Defects in AlGaN/GaN High Electron ...  

Science Conference Proceedings (OSTI)

Transmission electron microscope (TEM) cross sectional image has shown that electrical degradation is closely related to structural damage in the GaN cap and ...

150

File:USDA-CE-Production-GIFmaps-GA.pdf | Open Energy Information  

Open Energy Info (EERE)

GA.pdf GA.pdf Jump to: navigation, search File File history File usage Georgia Ethanol Plant Locations Size of this preview: 776 × 600 pixels. Full resolution ‎(1,650 × 1,275 pixels, file size: 410 KB, MIME type: application/pdf) Description Georgia Ethanol Plant Locations Sources United States Department of Agriculture Related Technologies Biomass, Biofuels, Ethanol Creation Date 2010-01-19 Extent State Countries United States UN Region Northern America States Georgia External links http://www.nass.usda.gov/Charts_and_Maps/Ethanol_Plants/ File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 16:12, 27 December 2010 Thumbnail for version as of 16:12, 27 December 2010 1,650 × 1,275 (410 KB) MapBot (Talk | contribs) Automated bot upload

151

Pulsed atomic layer epitaxy of quaternary AlInGaN layers  

Science Conference Proceedings (OSTI)

In this letter, we report on a material deposition scheme for quaternary Al{sub x}In{sub y}Ga{sub 1-x--y}N layers using a pulsed atomic layer epitaxy (PALE) technique. The PALE approach allows accurate control of the quaternary layer composition and thickness by simply changing the number of aluminum, indium, and gallium pulses in a unit cell and the number of unit cell repeats. Using PALE, AlInGaN layers with Al mole fractions in excess of 40% and strong room-temperature photoluminescence peaks at 280 nm can easily be grown even at temperatures lower than 800{sup o}C. {copyright} 2001 American Institute of Physics.

Zhang, J.; Kuokstis, E.; Fareed, Q.; Wang, H.; Yang, J.; Simin, G.; Asif Khan, M.; Gaska, R.; Shur, M.

2001-08-13T23:59:59.000Z

152

United States  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

E-T Global Energy, LLC E-T Global Energy, LLC OE Docket No. EA-381 Order Authorizing Electricity Exports to Mexico Order No. EA-381 June 10, 2011 I. BACKGROUND E-T Global Energy, LLC Order No. EA-381 Exports of electricity from the United States to a foreign country are regulated by the Department of Energy (DOE) pursuant to sections 301(b) and 402(f) of the Department ofEnergy Organization Act (42 U.S.C. 7151(b), 7172(f)) and require authorization under section 202(e) ofthe Federal Power Act (FPA) (16 U.S.C.824a(e)) 1 * On May 10,2011, DOE received an application from E-T Global Energy, LLC (E-T Global) for authority to transmit electric energy from the United States to Mexico for five years as a power marketer using existing international transmission facilities. E-

153

United States  

Office of Legacy Management (LM)

WASHINGTON, TUESDAY, JUNE 28, 1983 @nngmeional Ruord United States of America .__ -- . . ,- PROCEEDINGS AND DEBATES OF THE 9@ CONGRESS, FIRST SESSION United States Government Printing Office SUPERINTENDENT OF DOCUMENTS Washmgton, D C 20402 OFFICIAL BUSINESS Penalty Ior pwate use. $xX Congresstonal Record (USPS 087-390) Postage and Fees Pad U S Government Prlnhng 0ffv.X 375 SECOND CLASS NEWSPAPER H.4578 ' C.QNGRESSIONAL RECORD - HOUSE June 28, 1983 H.J. Res. 273: Mr. BOUND. Mr. W~.XMAN. Mr. OBERSTAR, Mr. BEDELL. Mr. BONER of Tennessee, Mr. OWENS. Mr. DAUB, Mr. CONTE. Mr. RAHALL; Mr. GRAY, Mr. VANDER JACT. Mr. TRAKLER, and Mr. Vxrrro. H. Con. Res. 107: Mr. KASICH. Mr. AUCOIN. Mr. CARPER, and Mr. SIZHFIJER. H. Con. Res. 118: Mr. FISH. Mr. LANTOS.

154

United States  

Office of Legacy Management (LM)

ongrees;ional Record ongrees;ional Record United States of America __._ -.. I. :- PROCEEDINGS AND DEBATES OF THE 9tth CONGRESS, FIRST SESSION United States Government Printing Office SUPERINTENDENT OF DOCUMENTS Washmcqton. Cl C 20402 OFFICIAL BUSINESS Penalty Ior pwate use. $300 Congressmal Record (USPS 087-390) Postage and Fees Pad U S Governme3n:jPnntmg OfIce SECOND CLASS NEWSPAPER H.4578 ' June 28, 1983 -: I H.J. Res. 273: Mr. BOLAND, Mr. WA-. Mr. OBERSTAFC, M' r. BEDELL, Mr. BONER of Tennessee, Mr. OWENS. Mr. DAUB. Mr. CONTE. Mr. RAHALL,. Mr. GRAY, Mr. VANDER JAGT. Mr. TRAKLER. and Mr. VENTO. H. Con. Res. iO7: Mr. KASICH. Mr. ALCOIN. Mr. CARPER. and Mr. SCHEUER. H. Con. Res. 118: Mr. FISH, Mr. LANTOS. Mr. KILDEE. Mr. SOLARZ Mr. Bmrr, Mr. BELWLL, Mr. RANG~L, Mr. DYMALLY. Mr.

155

Plasma Damage in p-GaN  

SciTech Connect

The effect of Inductively Coupled Plasma H{sub 2} or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400-550{angstrom}. At high ion fluxes or energies there can be type conversion of the initially p-GaN surface. Post etch annealing at 900 C restores the initial conductivity.

Cao, X.A.; Dang, G.T.; Hickman, R.A.; Pearton, S.J.; Ren, F.; Shul, R.J.; Van Hove, J.M.; Zhang, A.P.; Zhang, L.

1999-06-30T23:59:59.000Z

156

GaTe semiconductor for radiation detection  

SciTech Connect

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

157

United States  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5 5 United States Department of Energy Southeastern Power Administration Wholesale Power Rate Schedule CC-1-I Availability: This rate schedule shall be available to public bodies and cooperatives served through the facilities of Carolina Power & Light Company, Western Division (hereinafter called the Customers). Applicability: This rate schedule shall be applicable to electric capacity and energy available from the Dale Hollow, Center Hill, Wolf Creek, Cheatham, Old Hickory, Barkley, J. Percy Priest, and Cordell Hull Projects (all of such projects being hereinafter called collectively the "Cumberland Projects") and sold in wholesale quantities. Character of Service: The electric capacity and energy supplied hereunder will be three-phase alternating

158

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors  

E-Print Network (OSTI)

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

Lu, Bin

159

Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated Circuits  

Science Conference Proceedings (OSTI)

A new (AlGa)As/GaAs MODFET integrated circuit simulator is described. Our simulator is a customized version of SPICE incorporating the extended charge control model for MODFET's and the velocity saturation model for ungated FET's used as the load devices. ...

Choong H. Hyun; M. S. Shur; N. C. Cirillo

2006-11-01T23:59:59.000Z

160

Nanocrystals cylindrical microcavities exploiting thin-walled InGaAs/GaAs microtubes  

Science Conference Proceedings (OSTI)

This paper relies on the design and fabrication of CdSe/ZnS core/shell colloidal nanocrystals (NCs) cylindrical microcavities for microphotonics applications. The fabrication technology relies on the release of the strain in strained heterostructures, ... Keywords: Colloidal nanocrystals, InGaAs/GaAs microtubes, Strained multilayer

C. Giordano; M. T. Todaro; A. Salhi; L. Martiradonna; I. Viola; A. Passab; L. Carbone; G. Gigli; A. Passaseo; M. De Vittorio

2007-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT  

Science Conference Proceedings (OSTI)

A new AlGaN/GaN-based high electron mobility transistor (HEMT) is proposed and its micro-wave characteristics are discussed by introducing a nanoscale AlN or InN layer to study the potential improvement in their high frequency performance. The 2DEG transport mechanism including various sub-band calculations for both (Al,In) N-based HEMTs are also discussed in the paper. Apart from direct current characteristics of the proposed HEMT, various microwave parameters such as transconductance, unit current gain (h{sub 21} = 1) cut-off frequency (f{sub t}), high power-gain frequency (f{sub max}). Masons available/stable gain and masons unilateral gain are also discussed for both devices to understand its suitable deployment in microwave frequency range.

Lenka, T. R., E-mail: trlenka@gmail.com; Panda, A. K., E-mail: akpanda62@hotmail.com [National Institute of Science and Technology (India)

2011-09-15T23:59:59.000Z

162

Two-dimensional electron gas in AlGaN/GaN heterostructures  

Science Conference Proceedings (OSTI)

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. {copyright} {ital 1997 American Vacuum Society.}

Li, J.Z.; Lin, J.Y.; Jiang, H.X. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Khan, M.A.; Chen, Q. [APA Optics, Inc., Blaine, Minnesota 55449 (United States)] [APA Optics, Inc., Blaine, Minnesota 55449 (United States)

1997-07-01T23:59:59.000Z

163

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

DOE Green Energy (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

164

United States  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Tenaslta Power Services Co. Tenaslta Power Services Co. OE Docket No. EA-243-A Order Authorizing Electricity Exports to Canada Order No. EA-243-A March 1,2007 Tenaska Power Services Co. Order No. EA-243-A I. BACKGROUND Exports of elcctricity from the United States to a foreign country are regulated by the Department of Energy (DOE) pursuant to sections 30 I(b) and 402(f) of the Departrncnt of' Energy Organizatio~l Act (42 U, S.C. 7 15 1 (b), 7 1 72Cf)) and rcquirc authorization under section 202(e) of the Federal Power Act (FPA) ( Z 6 U. s.c.824a(e)j1. On August 16,2001, DOE issued Order No. EA-243 authorizing Tenaska Power Scrvices Co. (Tenaska) to transmit electric cncrgy from the United States to Canada as a power marketer. That authority expired on August 16,2003. On August 14,2006, Teilaska applied to renew the electricity export authority

165

United States  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

TexMex Energy, LLC TexMex Energy, LLC OE Docket No. EA-294-A Order Authorizing Electricity Exports to Mexico Order No. EA-294-A February 22, 2007 TexMex Energy, LLC Order No. EA-294-A I. BACKGROUND Exports of electricity from the United States to a foreign count~y are regulated by the Department of Energy (DOE) pursuant to sections 301(b) and 402(f) of the Department of Energy Organization Act (42 U.S.C. 7 15 1 (b), 71 72(f)) and require authorization under section 202(e) of the Federal Power Act (FPA) (16 U.S.C.824a(e)) . On August 25,2004, DOE issued Order No. EA-294 authorizing TexMex Energy LLC (TexMex) to transmit electric energy fiom the United States to Mexico as a power marketer. That authority expired on August 25, 2006. On September 8, 2006, TexMex applied to renew the electricity export authority

166

United States  

Gasoline and Diesel Fuel Update (EIA)

United States United States Coal ................................................ 4,367 4,077 4,747 4,181 4,473 4,125 4,983 4,330 4,414 4,003 4,796 4,178 4,344 4,479 4,348 Natural Gas .................................... 2,802 2,843 3,694 2,863 2,713 2,880 3,636 2,707 2,792 2,972 3,815 2,849 3,052 2,986 3,109 Petroleum (a) .................................. 74 73 81 67 73 70 75 66 75 70 76 66 74 71 71 Other Gases ................................... 32 33 36 32 32 34 37 33 33 35 39 34 33 34 35 Nuclear ........................................... 2,176 2,044 2,257 2,170 2,106 2,037 2,167 2,010 2,144 2,074 2,206 2,055 2,162 2,080 2,120 Renewable Energy Sources: Conventional Hydropower ........... 736 886 716 633 765 887 708 646 767 919 729 659 742 751 768 Wind ............................................ 491 520 353 449 477 521 379 475

167

Energy Analysis Department Supporting Photovoltaics in Market-Rate  

E-Print Network (OSTI)

Inspector, Atlanta Gas-Light Company, Atlanta, GA 4.0 HONORS AND AWARDS 2008 Harpole Professor of Electrical under High Penetration of Variable Generation," US Department of Energy office of Electricity Delivery

168

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED  

Science Conference Proceedings (OSTI)

We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm{sup 2}V{sup -1}s{sup -1} at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affect the low temperature electron mobility in AlGaN/GaN heterostructures. Growth at the transition towards Ga droplet formation produced the best results. A quantitative analysis of the magnetoresistance confirmes scattering at dislocations as the dominant scattering process at low temperature.

Broxtermann, D.; Sivis, M.; Malindretos, J.; Rizzi, A. [IV. physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

2012-03-15T23:59:59.000Z

169

United States  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Bangor Hydro-Electric Company Bangor Hydro-Electric Company OE Docket No. PP-89-1 Amendment to Presidential Permit Order No. PP-89-1 December 30,2005 PRESIDENTIAL PERMIT AMENDMENT Bangor Hydro-Electric Company Order No. PP-89-1 I. BACKGROUND The Department of Energy (DOE) has responsibility for implementing Executive Order (E.O.) 10485, as amended by E.O. 12038, which requires the issuance of a Presidential permit by DOE before electric trans~nission facilities may be constructed, operated, maintained, or connected at the borders of the United States. DOE may issue such a permit if it determines that the permit is in the public interest and after obtaining favorable recommendations from the U.S. Departments of State and Defense. On December 16, 1988, Bangor Hydro-Electric Company (BHE) applied to DOE

170

United States  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7 7 United States Department of Energy Southeastern Power Administration Wholesale Power Rate Schedule CTV-1-H Availability: This rate schedule shall be available to the Tennessee Valley Authority (hereinafter called TVA). Applicability: This rate schedule shall be applicable to electric capacity and energy generated at the Dale Hollow, Center Hill, Wolf Creek, Old Hickory, Cheatham, Barkley, J. Percy Priest, and Cordell Hull Projects (all of such projects being hereafter called collectively the "Cumberland Projects") and the Laurel Project sold under agreement between the Department of Energy and TVA. Character of Service: The electric capacity and energy supplied hereunder will be three-phase alternating current at a frequency of approximately 60 hertz at the outgoing terminals of the Cumberland

171

United States  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

United States Department of Energy Southeastern Power Administration Wholesale Power Rate Schedule CTVI-1-A Availability: This rate schedule shall be available to customers (hereinafter called the Customer) who are or were formerly in the Tennessee Valley Authority (hereinafter called TVA) service area. Applicability: This rate schedule shall be applicable to electric capacity and energy generated at the Dale Hollow, Center Hill, Wolf Creek, Old Hickory, Cheatham, Barkley, J. Percy Priest, and Cordell Hull Projects (all of such projects being hereafter called collectively the "Cumberland Projects") and the Laurel Project sold under agreement between the Department of Energy and the Customer. Character of Service: The electric capacity and energy supplied hereunder will be three-phase alternating

172

UNITED STATES  

Office of Legacy Management (LM)

f).~<~~ \--\c :y-,ai F p"- KG f).~<~~ \--\c :y-,ai F p"- KG WASHINOTDN 28.0. C. ' -lr ' \ ' ' --- ".I ?--" ' z I. .~;-4.' J frr*o& 2 ii, - - -4 70-147 LRL:JCD JAN !! 8 1958 Oregon Metallurgical Corporation P. 0. Box 484 Albany, Oregon Attention: Mr. Stephen M. Shelton General Manager Gentlemen: Enclosed is Special Nuclear Material License No. SNM-144, as amended. Very 33uly yours, r:; I,;, ll)~gQ""d".- Lyall Johnson Chief, Licensing Branch Division of Licensing & Regulation Enclosure: SNM-144, as amended Distribution: bRO0 Attn: Dr. H.M.Roth DFMusser NMM MMMann INS JCRyan FIN (2) HSteele LRL SRGustavson LRL Document room Formal file Suppl. file Br & Div rf's ' .b liwwArry s/VW- ' q+ ' yj/ 2; 2-' , COP' 1 J JAM01958 -- UNITED STATES ATOMIC ENERGY COMMISSION

173

United States  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

United States Department of Energy Southeastern Power Administration Wholesale Power Rate Schedule JW-2-F Availability: This rate schedule shall be available to the Florida Power Corporation (or Progress Energy Florida, hereinafter called the Company). Applicability: This rate schedule shall be applicable to electric energy generated at the Jim Woodruff Project (hereinafter called the Project) and sold to the Company in wholesale quantities. Points of Delivery: Power sold to the Company by the Government will be delivered at the connection of the Company's transmission system with the Project bus. Character of Service: Electric power delivered to the Company will be three-phase alternating current at a nominal frequency of 60 cycles per second.

174

Formation of manganese {delta}-doped atomic layer in wurtzite GaN  

Science Conference Proceedings (OSTI)

We describe the formation of a {delta}-doped manganese layer embedded within c-plane wurtzite gallium nitride using a special molecular beam epitaxy growth process. Manganese is first deposited on the gallium-poor GaN (0001) surface, forming a {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign reconstructed phase. This well-defined surface reconstruction is then nitrided using plasma nitridation, and gallium nitride is overgrown. The manganese content of the {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign phase, namely one Mn per each {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign unit cell, implies that the MnGaN alloy layer has a Mn concentration of up to 33%. The structure and chemical content of the surface are monitored beginning from the initial growth stage up through the overgrowth of 20 additional monolayers (MLs) of GaN. An exponential-like drop-off of the Mn signal with increasing GaN monolayers, as measured by Auger electron spectroscopy, indicates that the highly concentrated Mn layer remains at the {delta}-doped interface. A model of the resultant {delta}-doped structure is formulated based on the experimental data, and implications for possible spintronic applications are discussed.

Shi Meng; Chinchore, Abhijit; Wang Kangkang; Mandru, Andrada-Oana; Liu Yinghao; Smith, Arthur R. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)

2012-09-01T23:59:59.000Z

175

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures  

Science Conference Proceedings (OSTI)

Double pulse doped ({delta}-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm{sup 2}/(V s) at sheet electron densities of 3.00 x 10{sup 12} and 3.36 x 10{sup 12} cm{sup -2}, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A. [Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)

2010-07-15T23:59:59.000Z

176

GaN Nanopore Arrays: Fabrication and Characterization  

E-Print Network (OSTI)

GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

Wang, Yadong

177

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Structural and Geographic Characteristics of Homes in South Region, Divisions, and States, 2009" 0 Structural and Geographic Characteristics of Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" "Structural and Geographic Characteristics",,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" ,,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX"

178

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Computers and Other Electronics in Homes in South Region, Divisions, and States, 2009" 0 Computers and Other Electronics in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Computers and Other Electronics",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX"

179

SciTech Connect: "light emitting diodes"  

Office of Scientific and Technical Information (OSTI)

light emitting diodes" Find light emitting diodes" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

180

SciTech Connect: "August 2003 blackout"  

Office of Scientific and Technical Information (OSTI)

August 2003 blackout" Find August 2003 blackout" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

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While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

SciTech Connect: "solar plasma wind"  

Office of Scientific and Technical Information (OSTI)

solar plasma wind" Find solar plasma wind" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

182

SciTech Connect: "gamma ray bursts"  

Office of Scientific and Technical Information (OSTI)

gamma ray bursts" Find gamma ray bursts" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

183

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

184

Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape ...  

Science Conference Proceedings (OSTI)

... Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape Memory Alloys. Peng Zhao (Dept. of Materials Science and ...

185

Development of a Bulk GaN Growth Technique for Low Defect Density, Large-Area Native Substrates  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

the Electrochemical Solution the Electrochemical Solution Growth (ESG) Technique for Native GaN Substrates DOE Energy Storage & Power Electronics Research Program 30 September 2008 PI: Karen Waldrip Advanced Power Sources R&D, Dept 2546 PM: Stan Atcitty, John Boyes Sandia National Laboratories, Albuquerque, NM, 87185 Sponsor: Gil Bindewald, DOE Power Electronics & Energy Storage Program Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. Outline * Motivation * Existing GaN Growth Technique - Epitaxial Lateral Overgrowth - Methods for Growing Bulk GaN * Development of the Electrochemical Solution Growth Technique

186

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

Chung, Jinwook W. (Jinwook Will)

2008-01-01T23:59:59.000Z

187

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

We have investigated the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors using atomic force microscopy and scanning electron microscopy after removing the gate metallization by ...

Makaram, Prashanth

188

Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment  

E-Print Network (OSTI)

Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate ...

Palacios, Tomas

189

GaN: Defect and Device Issues  

SciTech Connect

The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

1998-11-09T23:59:59.000Z

190

GaAs photoconductive semiconductor switch  

DOE Patents (OSTI)

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

191

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network (OSTI)

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

192

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

Fainman, "Influence of chlorine on etched sidewalls inFainman, Influence of chlorine on etched sidewalls inthe RIBE of GaAs with chlorine (Cl 2 ), ion beam sputtering

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

193

JJ2, Optical Polarization of Non-Polar GaInN/GaN LEDs  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

194

K1, Molecular Beam Epitaxy of Catalyst-Free InGaN/GaN Nanowires ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

195

Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes  

E-Print Network (OSTI)

We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

Cornelius S. Bausch; Aune Koitme; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

2013-05-06T23:59:59.000Z

196

Recent progress in InGaAsSb/GaSb TPV devices  

DOE Green Energy (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

197

c3fb13dd06a8704143923ce0a744bf57  

NLE Websites -- All DOE Office Websites (Extended Search)

HSQC (heteronuclear single quantum coherence) 13 C- 1 H correlation spectra of whole biomass in perdeuterated pyridinium chloride-DMSO system: An effective tool for evaluating pretreatment Reichel Samuel a,c , Marcus Foston a,c , Nan Jaing a,c , Shilin Cao a , Lenong Allison a,c , Michael Studer c , Charles Wyman c , Arthur J. Ragauskas a,b,c,⇑ a School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, GA, United States b Institute of Paper Science and Technology, Georgia Institute of Technology, Atlanta, GA, United States c BioEnergy Science Center, CE-CERT and Chemical and Environmental Engineering Department, Bourns College of Engineering, University of California, Riverside, CA, United States a r t i c l e i n f o Article history: Received 5 May 2010 Received in revised form 12 April 2011 Accepted 18 April 2011 Available online 30 April 2011 Keywords:

198

A rapid analytical pyrolysis method - Alfalfa (Medicago sativa)  

NLE Websites -- All DOE Office Websites (Extended Search)

Increase in 4-coumaryl alcohol (H) units during lignification in Increase in 4-coumaryl alcohol (H) units during lignification in alfalfa (Medicago sativa) alters extractability and molecular weight of lignin Angela Ziebell 1,2 , Kristen Gracom ,1,2 , Rui Katahira 1 , Fang Chen 3,4 , Yunqiao Pu 5,6 , Art Ragauskas 5,6 , Richard A. Dixon 3,4 and Mark Davis 1,2 1-National Bioenergy Center, National Renewable Energy Laboratory, Golden, CO 80401-3393; 2-Bioenergy Science Center, National Renewable Energy Laboratory, 1617 Golden, CO 80401-3393; 3-Samuel Roberts Noble Foundation, Ardmore, OK 73401; 4-Bioenergy Science Center, Ardmore, OK 73401; 5-Institute of Paper Science and Technology at Georgia Tech., Atlanta, GA 30318; 6-Bioenergy Science Center, Georgia Tech., Atlanta, GA 30318 Running head: Increase in coumaryl alcohol units alters lignin molecular weight

199

GaNPAs Solar Cells Lattice-Matched To GaP: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

Geisz, J. F.; Friedman, D. J.; Kurtz, S.

2002-05-01T23:59:59.000Z

200

GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP  

Science Conference Proceedings (OSTI)

We report on the epitaxial growth of an AlSb/InAs heterostructure on a (001) GaP substrate. We investigate the conditions for the most efficient relaxation of GaSb islands on GaP. In particular, we show that the GaP surface treatment and the growth temperature are crucial for the formation of a two-dimensional periodic array of 90 deg. misfit dislocations at the episubstrate interface. With this relaxation process, an AlSb/InAs heterostructure exhibiting a room temperature mobility of 25 500 cm{sup 2} V{sup -1} s{sup -1} on GaP is demonstrated. This result paves the way to the integration of Sb-based devices on Si substrates through the use of GaP/Si templates.

El Kazzi, S.; Desplanque, L.; Coinon, C.; Wallart, X. [Institut d'Electronique, de Microelectronique, et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d'Ascq Cedex (France); Wang, Y.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Marechal Juin, 14050 Caen Cedex (France)

2010-11-08T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Structure and properties of rhombohedral CePd{sub 3}Ga{sub 8}: A variant of the cubic parent compound with BaHg{sub 11} structure type  

SciTech Connect

Single crystals of a new intermetallic gallide, R-CePd{sub 3}Ga{sub 8}, have been synthesized from excess molten gallium. Single-crystal X-ray diffraction reveals that R-CePd{sub 3}Ga{sub 8} crystallizes in the R-3m space group with a=b=c=8.4903(10) A and {alpha}={beta}={gamma}=89.993(17). R-CePd{sub 3}Ga{sub 8} is a variant of the cubic BaHg{sub 11} structure type with three structural units: a Ce-centered polyhedron, a distorted cube of Pd{sub 2}Ga{sub 6} and a Pd-centered cuboctahedron. The distortions of these units are compared to undistorted analogous units in intermetallic compounds with BaHg{sub 11} structure type. Field and temperature-dependent magnetization measurements on R-CePd{sub 3}Ga{sub 8} reveal a paramagnetic material with strong antiferromagnetic correlations and a magnetization consistent with Ce{sup 3+}. Electrical resistance measurements indicate Kondo behavior between localized Ce{sup 3+} magnetic moments. - Graphical Abstract: Single crystals of CePd{sub 3}Ga{sub 8} have been synthesized from Ga flux. This new compound is the first rhombohedral variant of the cubic BaHg{sub 11} structure type. Highlights: Black-Right-Pointing-Triangle Single crystals of CePd{sub 3}Ga{sub 8} were synthesized from gallium flux. Black-Right-Pointing-Triangle CePd{sub 3}Ga{sub 8} is the first rhombohedral variant of the cubic BaHg{sub 11} structure type. Black-Right-Pointing-Triangle Paramagnetic with antiferromagnetic correlations. Black-Right-Pointing-Triangle Magnetization consistent with Ce{sup 3+}.

Macaluso, Robin T., E-mail: robin.macaluso@unco.edu [Department of Chemistry and Biochemistry, University of Northern Colorado, Greeley, CO 80639 (United States); Materials Science Division, Argonne National Laboratory, 9700S. Cass Ave., Argonne, IL 60439 (United States); Francisco, Melanie [Department of Chemistry, Northwestern University, Evanston, IL60208 (United States); Young, David P.; Stadler, Shane [Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803 (United States); Mitchell, John F.; Geiser, Urs [Materials Science Division, Argonne National Laboratory, 9700S. Cass Ave., Argonne, IL 60439 (United States); Hong, Han-yul [Department of Chemistry and Biochemistry, University of Northern Colorado, Greeley, CO 80639 (United States); Kanatzidis, Mercouri G. [Materials Science Division, Argonne National Laboratory, 9700S. Cass Ave., Argonne, IL 60439 (United States); Department of Chemistry, Northwestern University, Evanston, IL60208 (United States)

2011-12-15T23:59:59.000Z

202

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents (OSTI)

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

203

Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy. Scanning electron microscopy images show that vertical and uniform GaP NWs and GaP/GaNP core/shell NWs are grown on Si(111). The density ranges from {approx}1 x 10{sup 7} to {approx}5 x 10{sup 8} cm{sup -2} across the substrate. Typical diameters are {approx}110 nm for GaP NWs and {approx}220 nm for GaP/GaNP NWs. Room temperature photoluminescence (PL) signal from the GaP/GaNP core/shell NWs confirms that N is incorporated in the shell and the average N content is {approx}0.9%. The PL low-energy tail is significantly reduced, compared to bulk GaNP.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Li, H. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Tu, C. W. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2012-01-30T23:59:59.000Z

204

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network (OSTI)

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP, or (Al,Ga)As, which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically hole-mediated ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Mn-doped Ga(As,P) is also favorable, as compared to (Al,Ga)As, with respect to the formation of carrier and moment compensating interstitial Mn impurities. In (Ga,Mn) (As,P) we find a marked decrease of the partial concentration of these detrimental impurities with increasing P content.

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

205

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates  

E-Print Network (OSTI)

5221, 34095 Montpellier, France E-mail: pmc53@cam.ac.uk Received October 12, 2012; accepted November 22, 2012; published online May 20, 2013 This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various...

Corfdir, Pierre; Dussaigne, Amlie; Teisseyre, Henryk; Suski, Tadeusz; Grzegory, Izabella; Lefebvre, Pierre; Giraud, Etienne; Shahmohammadi, Mehran; Phillips, Richard; Ganire, Jean-Daniel; Grandjean, Nicolas; Deveaud, Benot

206

Nomination Form DEPARTMENT / UNIT  

E-Print Network (OSTI)

Nomination Form DEPARTMENT / UNIT: CAMPUS ADDRESS: CLASSIFICATION / TITLE: DEPARTMENT EMAIL ADDRESS: DEPARTMENT TELEPHONE: 2011 FRANKLIN STAFF SERVICE AWARDS START DATE IN DEPARTMENT / UNIT: ACTUAL NUMBER MEMBER DEADLINE: FRIDAY MARCH 4, 2011 ADDITIONAL COMMENTS: Signature of Head / Director of Nominee's Unit

Arnold, Jonathan

207

Unit Outline Training Guide  

E-Print Network (OSTI)

Unit Outline Builder Training Guide Document Status: Final Revision Number: 6.0 Revision Date: 14 Approved #12;Online Unit Outline Builder Training Guide Curtin University of Technology Page 2 TABLE................................................................................................................. 4 4. Log in and Select a Unit Outline

208

Nomination Form DEPARTMENT / UNIT  

E-Print Network (OSTI)

Nomination Form DEPARTMENT / UNIT: CAMPUS ADDRESS: CLASSIFICATION / TITLE: DEPARTMENT EMAIL ADDRESS: DEPARTMENT TELEPHONE: 2013 FRANKLIN STAFF SERVICE AWARDS START DATE IN DEPARTMENT / UNIT: ACTUAL NUMBER MEMBER DEADLINE: MARCH 5, 2013 ADDITIONAL COMMENTS: Signature of Head / Director of Nominee's Unit

Arnold, Jonathan

209

Nomination Form DEPARTMENT / UNIT  

E-Print Network (OSTI)

Nomination Form DEPARTMENT / UNIT: CAMPUS ADDRESS: CLASSIFICATION / TITLE: DEPARTMENT EMAIL ADDRESS: DEPARTMENT TELEPHONE: 2012 FRANKLIN STAFF SERVICE AWARDS START DATE IN DEPARTMENT / UNIT: ACTUAL NUMBER MEMBER DEADLINE: FRIDAY MARCH 2, 2012 ADDITIONAL COMMENTS: Signature of Head / Director of Nominee's Unit

Arnold, Jonathan

210

Nomination Form DEPARTMENT / UNIT  

E-Print Network (OSTI)

Nomination Form DEPARTMENT / UNIT: CAMPUS ADDRESS: CLASSIFICATION / TITLE: DEPARTMENT EMAIL ADDRESS: DEPARTMENT TELEPHONE: 2014 FRANKLIN STAFF SERVICE AWARDS START DATE IN DEPARTMENT / UNIT: ACTUAL NUMBER MEMBER DEADLINE: MARCH 7, 2014 ADDITIONAL COMMENTS: Signature of Head / Director of Nominee's Unit

Arnold, Jonathan

211

Growth orientation dependent photoluminescence of GaAsN alloys  

SciTech Connect

We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal.

Han, Xiuxun; Tanaka, Tomohiro; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan); Sato, Shinichiro [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

2012-01-16T23:59:59.000Z

212

Microsoft Word - GT-ORNL - Quarterly Report - Ending 12 2009.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

12-31-2009 12-31-2009 Methane Recovery from Hydrate-bearing Sediments Funding Number: DE-FC26-06NT42963 Submitted By: J. Carlos Santamarina Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0355 Phone: (404)-894.7605 Fax: (404)-894.2278 E-mail: jcs@gatech.edu Costas Tsouris Oak Ridge National Laboratory Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0373 E-mail: costas.tsouris@ce.gatech.edu Acknowledgment: This material is based upon work supported by the Department of Energy under Award Number DE-FC26-06NT42963 Disclaimer: This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees,

213

Microsoft Word - GT-ORNL - Quarterly Report - July 2010.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

July 2010 July 2010 Methane Recovery from Hydrate-bearing Sediments Funding Number: DE-FC26-06NT42963 Submitted By: J. Carlos Santamarina Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0355 Phone: (404)-894.7605 Fax: (404)-894.2278 E-mail: jcs@gatech.edu Costas Tsouris Oak Ridge National Laboratory Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0373 E-mail: costas.tsouris@ce.gatech.edu Acknowledgment: "This material is based upon work supported by the Department of Energy under Award Number DE-FC26-06NT42963." Disclaimer: "This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor

214

Microsoft Word - GT-ORNL - Quarterly Report - Ending 3 2010.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

3-31-2010 3-31-2010 Methane Recovery from Hydrate-bearing Sediments Funding Number: DE-FC26-06NT42963 Submitted By: J. Carlos Santamarina Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0355 Phone: (404)-894.7605 Fax: (404)-894.2278 E-mail: jcs@gatech.edu Costas Tsouris Oak Ridge National Laboratory Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0373 E-mail: costas.tsouris@ce.gatech.edu Acknowledgment: This material is based upon work supported by the Department of Energy under Award Number DE-FC26-06NT42963 Disclaimer: This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes

215

Microsoft Word - GT-ORNL - Quarterly Report - Sep 2010.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

September 2010 September 2010 Methane Recovery from Hydrate-bearing Sediments Funding Number: DE-FC26-06NT42963 Submitted By: J. Carlos Santamarina Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0355 Phone: (404)-894.7605 Fax: (404)-894.2278 E-mail: jcs@gatech.edu Costas Tsouris Oak Ridge National Laboratory Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0373 E-mail: costas.tsouris@ce.gatech.edu Acknowledgment: This material is based upon work supported by the Department of Energy under Award Number DE-FC26-06NT42963 Disclaimer: This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes any

216

Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

1998-10-14T23:59:59.000Z

217

Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor  

SciTech Connect

A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ~10 were obtained at 300 degree C.

Abernathy, C.R.; Baca, A.G.; Cao, X.A.; Cho, H.; Dang, G.T.; Donovan, S.M.; Han, J.; Jung, K.B.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Wilson, R.G.; Zhang, A.P.; Zhang, L

1999-03-16T23:59:59.000Z

218

A InGaN/GaN quantum dot green ({lambda}=524 nm) laser  

SciTech Connect

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab [Department of Electrical Engineering and Computer Science, Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2011-05-30T23:59:59.000Z

219

Evaluation of defects and degradation in GaAs-GaAlAs wafers using transmission cathodoluminescence  

Science Conference Proceedings (OSTI)

A large number of GaAs substrates GaAlAs double-heterostructure (DH) wafers, and high-radiance GaAlAs DH light-emitting diodes (LEDS) were evaluated using transmission cathodoluminescence (TCL). We show that only epitaxial wafers with a high defect density as revealed by TCL readily develop dark line defects (DLDs) with current injection, optical excitation, or electron beam excitation. Furthermore, in agreement with the previous work, the electron-beam-induced DLDs originate at dislocations and their growth requires minority-carrier injection. Based on these results, it is inferred that TCL can serve as a nondestructive screening technique for the selection of materials that produces a high yield of reliable LEDs.

Chin, A.K.; Keramidas, V.G.; Johnston, W.D. Jr.; Mahajan, S.; Roccasecca, D.D.

1980-02-01T23:59:59.000Z

220

GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization  

DOE Green Energy (OSTI)

Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. The GaInSb layers were grown by organometallic vapor phase epitaxy (OMVPE) and the InGaAsSb lattice-matched layers were grown by liquid phase epitaxy (LPE). Device fabrication steps include unannealed p-type ohmic contacts, annealed Sn/Au n-type ohmic contacts, and a thick Ag top-surface contact using a lift-off process. Devices are characterized primarily by dark I-V, photo I-V, and quantum efficiency measurements, which are correlated to microscopic and macroscopic material properties. Particular emphasis has been on material enhancements to increase quantum efficiency and decrease dark saturation current density. TPV device performance is presently limited by the base diffusion length, typically 1 to 2 microns.

Hitchcock, C.; Gutmann, R.; Borrego, J.; Ehsani, H.; Bhat, I. [Rensselaer Polytechnic Inst., Troy, NY (United States); Freeman, M.; Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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221

Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells  

Science Conference Proceedings (OSTI)

The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

Baidus, N. V. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Vainberg, V. V. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine); Zvonkov, B. N. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Pylypchuk, A. S., E-mail: pylypchuk@iop.kiev.ua; Poroshin, V. N.; Sarbey, O. G. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine)

2012-05-15T23:59:59.000Z

222

Radiation Hard AlGaN Detectors and Imager  

Science Conference Proceedings (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

223

InGaAs and Ge MOSFETs with high ? dielectrics  

Science Conference Proceedings (OSTI)

InGaAs and Ge MOSFETs with high @k's are now the leading candidates for technology beyond the 15nm node CMOS. The UHV-Al"2O"3/Ga"2O"3(Gd"2O"3) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities ... Keywords: Atomic layer deposition, Germanium, High ? dielectrics, III-V Compound semiconductor, MOSFETs, Molecular beam epitaxy

W. C. Lee; P. Chang; T. D. Lin; L. K. Chu; H. C. Chiu; J. Kwo; M. Hong

2011-04-01T23:59:59.000Z

224

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys ...  

Science Conference Proceedings (OSTI)

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys Based on the ... Resources for the Selection and Use of Interatomic Potentials in Atomistic...

225

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

contractors supported the dismantlement including asbestos removal and concrete cutting, electrical, and HVAC. Project support functions were provided by GA organizations...

226

Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 {mu}m  

Science Conference Proceedings (OSTI)

Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 {mu}m when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 Degree-Sign C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts.

Ye Hong; Song Yuxin; Wang Shumin [Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296 (Sweden); Gu Yi [Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2012-12-15T23:59:59.000Z

227

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots  

Science Conference Proceedings (OSTI)

In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation.

Gargallo-Caballero, R.; Guzman, A.; Ulloa, J. M.; Hierro, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM)-Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Hopkinson, M. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Luna, E.; Trampert, A. [Paul Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2012-04-15T23:59:59.000Z

228

Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb  

DOE Green Energy (OSTI)

GaSb and InGaSb have been demonstrated to be suitable choices for high efficiency thermophotovoltaic (TPV) cells. Synthesis and growth of bulk GaSb single crystals and GaInSb polycrystals have been carried out by the vertical Bridgman technique, with a baffle immersed in the melt and by complete encapsulation of the melt by low melting temperature alkali halides or oxides. The critical roles of the baffle and the encapsulation are discussed. Efforts in obtaining device grade GaSb with superior structural and electrical properties and compositionally homogeneous GaInSb are described, emphasizing the key steps in the growth cycle developed to obtain good crystalline quality.

Dutta, P.S.; Ostrogorsky, A.G.; Gutmann, R.J.

1997-05-01T23:59:59.000Z

229

P8, Fabrication of Subwavelength Pillar Arrays on GaAs by Confined ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

230

II4, Compositionally-Graded Layers Composed of Tandem InGaAs ...  

Science Conference Proceedings (OSTI)

The specification of the 6 miscut is important because it provides step ..... of Metamorphic InGaP on GaAs and GaP for Wide-Bandgap Photovoltaic Junctions.

231

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm, Mingwei Zhu  

E-Print Network (OSTI)

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm in nonpolar light-emitting diodes (LEDs) covering the blue to green spectral range. In photo- luminescence, m's overall power efficiency. Linearly polarized light can be efficiently generated in GaInN/GaN-based light-emitting

Wetzel, Christian M.

232

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. (Research Triangle Inst., Research Triangle Park, NC (United States))

1993-01-01T23:59:59.000Z

233

SOLVING MIXED INTEGER BILINEAR PROBLEMS USING MILP ...  

E-Print Network (OSTI)

School of Industrial and Systems Engineering, Georgia Institute of Technology, Atlanta, GA. ExxonMobil Research and Engineering Company, Annandale, NJ...

234

Infiltration in ASHRAE's Residential Ventilation Standards  

E-Print Network (OSTI)

Engineers,Atlanta,GA. (1993) ASTM,StandardE1827?96,StandardTestMethodsforDeterminingAirtightnessofDoor, ASTM Book of Standards, American Society of

Sherman, Max

2008-01-01T23:59:59.000Z

235

DRAFT - EXPOSURE FACTORS HANDBOOK - Update to Exposure Factors...  

NLE Websites -- All DOE Office Websites (Extended Search)

Atlanta, GA. exchange rate -- can be used by exposure assessors in ASHRAE. (1993) ASHRAE Handbook: Fundamentals. modeling indoor-air concentrations as one of the inputs to...

236

NETL F 451.1-1/1 Categorical Exclusion (CX) Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

812010 - 7312012 Atlanta, GA Training Program for Commercial Building Energy Commissioning AgentsAuditors Training curriculum development for energy commissioning agents...

237

Methane Hydrate Advisory Committee Meeting Minutes, January 2010...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

January 2010 Methane Hydrate Advisory Committee Meeting Minutes, January 2010 Methane Hydrate Advisory Committee Meeting Minutes January, 2010 Atlanta, GA Methane Hydrate Advisory...

238

RESIDENTIAL THERMOSTATS: COMFORT CONTROLS IN CALIFORNIA HOMES  

E-Print Network (OSTI)

for Residential Winter and Summer Air Conditioning.Air Conditioning Contractors of America. Washington, DC.refrigerating and Air-conditioning Engineers, Atlanta, GA.

Meier, Alan K.

2008-01-01T23:59:59.000Z

239

NETL F 451.1-1/1 Categorical Exclusion (CX) Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2009 S. Richardson 10012009 through 09302013 2193 Peachtree Rd, Atlanta, GA E85 (Ethanol) Retail Fueling Infrastructure Installation Installation of E85 (ethanol) retail...

240

Department of Energy Honors 50 ENERGY STAR Partners that Saved...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Mass.) The Saunders Hotel Group (Boston, Mass.) Servidyne Systems, LLC (Atlanta, Ga.) Toyota Motor Manufacturing North America Inc. (Erlanger, Ky.) Transwestern Commercial...

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

NETL F 451.1-1/1 Categorical Exclusion (CX) Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

PMCPower and Vehicle Tech. Div. 09 S. Richardson 382010 - 372015 Marrow, GA DeKalb CountyMetropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle...

242

Publications  

NLE Websites -- All DOE Office Websites (Extended Search)

of Operating Hardware on Window Thermal Performance." In BEST3 Conference. Atlanta, GA, 2012. 2011 Gustavsen, Arlid, Steinar Grynning, Dariush K. Arasteh, Bjrn Petter...

243

NETL F 451.1-1/1 Categorical Exclusion (CX) Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

PMCPower and Vehicle Tech. Div. 09 S. Richardson 382010 - 372015 Morrow, GA DeKalb CountyMetropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle...

244

NETL F 451.1-1/1 Categorical Exclusion (CX) Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

ADVANCED TECHNOLOGY VEHICLE PROJECT Purchase and deployment of commercially available OEM natural gas fueled vehicles into DeKalb County (Atlanta GA area) sanitation fleet. 04 14...

245

Building and Fire Publications  

Science Conference Proceedings (OSTI)

... (1353 K) Davis, WD. CH-99-8-1; ASHRAE Transactions: Symposia, Vol. 105, No. ... (ASHRAE), 1791 Tullie Circle NE, Atlanta, GA 30329. ...

246

Residential Forced Air System Cabinet Leakage and Blower Performance  

E-Print Network (OSTI)

ductleakagetesting. ASHRAETransactions,June2008. ASHRAE,Atlanta,GA. LBNL62262. Walker,I.S. (Institute,Arlington,VA. ASHRAEStandard103. (2007).

Walker, Iain S.

2010-01-01T23:59:59.000Z

247

Building and Fire Publications  

Science Conference Proceedings (OSTI)

... (ASHRAE). October 6-8, 1996, Baltimore, MD, ASHRAE, Atlanta, GA, Teichman, KY, Editor(s), 139-150 pp, 1996. Keywords: ...

248

Project Brief: ASHRAE, Inc.  

Science Conference Proceedings (OSTI)

... RECIPIENT: ASHRAE, Inc., Atlanta, GA. Project duration: 3 Years; Total NIST Funding: $1,500,000. ... Jodi Dunlop, 678-539-1140 jdunlop@ashrae.org. ...

2010-10-05T23:59:59.000Z

249

NETL F 451.1-1/1 Categorical Exclusion (CX) Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2009 - 92013 250 Arizona Ave, Atlanta, GA I-75 Green Corridor Project Install retail biofuel fueling infrastructure along the Interstate 75 corridor. 09 01 2010 Digitally signed...

250

Bounds for nested law invariant coherent risk measures  

E-Print Network (OSTI)

School of Industrial & Systems Engineering, Georgia Institute of Technology, 765 Ferst Drive, Atlanta, GA 30332, e-mail: ashapiro@isye.gatech.edu.

251

Al-Cr -2007-1 February 1, 2007 Aluminum and Chromium Leaching ...  

Al-Cr -2007-1 February 1, 2007 Aluminum and Chromium Leaching Workshop Atlanta, GA January 23 24, 2007 Crowne Plaza Airport Feedback Questionnaire

252

SR0006  

NLE Websites -- All DOE Office Websites (Extended Search)

environmental cleanup science and technology are on display at the Department of Energy Environmental Management Science Program (EMSP) National Workshop in Atlanta, GA on April...

253

Parametric System Curves: Correlations Between Fan Pressure Rise and Flow for Large Commercial Buildings  

E-Print Network (OSTI)

Filter Pressure Loss Model for Fan Energy Calculation in Air2010. Selecting Efficient Fans. ASHRAE Journal, Vol. 52,Equipment: Chapter 20 Fans. Atlanta, GA: American Society

Sherman, Max

2010-01-01T23:59:59.000Z

254

Laboratories for the 21st Century: Best Practices Guide  

NLE Websites -- All DOE Office Websites (Extended Search)

Society of Heating, Refrigeration, and Air-condi- tioning Engineers (ASHRAE), 2005 Fundamentals Handbook, Atlanta, GA: ASHRAE, 2005. ASHRAE Laboratory Design Guide, American...

255

Home Depot Foundation | Open Energy Information  

Open Energy Info (EERE)

Depot Foundation Jump to: navigation, search Name Home Depot Foundation Place Atlanta, GA Website http:www.homedepotfoundation References Home Depot Foundation1 Information...

256

The Department of Energy is hosting a Non-Destructive ...  

The Department of Energy is hosting a Non-Destructive Examination Independent Review in Atlanta, GA . ... AGENDA I HOTEL I REGISTER I PRESENTER GUIDELINES I WEBCAST ...

257

Microsoft Word - Chapter 12 - 2-10-11  

National Nuclear Security Administration (NNSA)

Years of Experience: 12 Connor, Steve, Radiological Transportation, Tetra Tech M.S., Physics, Georgia Institute of Technology, Atlanta, GA, 1974 B.S., Physics, Georgia Institute...

258

Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor  

Science Conference Proceedings (OSTI)

Keywords: Ga vacancies, GaN growth, gas feeding method, optical property, rapid thermal chemical vapor deposition (RTCVD), yellow luminescence

Sun Jung Kim; Young Hun Seo; Kee Suk Nahm; Yun Bong Hahn; Hyun Wook Shim; Eun-Kyung Suh; Kee Young Lim; Hyung Jae Lee

1999-08-01T23:59:59.000Z

259

Functional Imprinting Structures on GaN-Based Light-Emitting ...  

Science Conference Proceedings (OSTI)

Keywords: GaN, light-emitting diode (LED), imprinting technology, far-field pattern modulation, light extraction. 1. Introduction. GaN-based light-emitting diodes...

260

Foreign Obligations Implementation Status Presentation  

National Nuclear Security Administration (NNSA)

January 13, 2004 Crowne Plaza Ravinia Atlanta, January 13, 2004 Crowne Plaza Ravinia Atlanta, January 13, 2004 Crowne Plaza Ravinia Atlanta, Georgia Georgia Obligations Accounting Implementation Workshop Obligations Accounting Implementation Workshop Foreign Obligations Implementation Status Brian G. Horn U.S. Nuclear Regulatory Commission January 13, 2004 Obligations Accounting Implementation Workshop January 13, 2 Obligations Accounting Implementation Workshop January 13, 2004 Crowne Plaza Ravinia Atlanta, GA 004 Crowne Plaza Ravinia Atlanta, GA Overview of Meeting Overview of Meeting * Review how the Obligation Tracking System is working * Presentations: - Review of Government notification procedures - Establishment of the beginning Obligation Balances for sites

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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261

Bonding and gap states at GaAs-oxide interfaces  

Science Conference Proceedings (OSTI)

The nature of bonding and possible causes of Fermi level pinning at high mobility-high dielectric constant oxide GaAs:HfO"2 interfaces are discussed. It is argued that these are atoms with defective bonding, rather than states due to the bulk semiconductor ... Keywords: GaAs, bonding, interface

John Robertson; Liang Lin

2011-04-01T23:59:59.000Z

262

Elastic properties of Pu metal and Pu-Ga alloys  

Science Conference Proceedings (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

263

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Fuels Used and End Uses in Homes in South Region, Divisions, and States, 2009" 0 Fuels Used and End Uses in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Fuels Used and End Uses",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

264

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Appliances in Homes in South Region, Divisions, and States, 2009" 0 Appliances in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Appliances",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

265

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Televisions in Homes in South Region, Divisions, and States, 2009" 0 Televisions in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Televisions",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

266

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Household Demographics of Homes in South Region, Divisions, and States, 2009" 0 Household Demographics of Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Household Demographics",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

267

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Air Conditioning in Homes in South Region, Divisions, and States, 2009" 0 Air Conditioning in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Air Conditioning",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

268

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Water Heating in U.S. Homes in South Region, Divisions, and States, 2009" 0 Water Heating in U.S. Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Water Heating",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

269

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Space Heating in U.S. Homes in South Region, Divisions, and States, 2009" 0 Space Heating in U.S. Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Space Heating",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

270

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network (OSTI)

be applicable to light sources in fiber-optic communication systems.13 However, there have been no reports intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

271

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells  

E-Print Network (OSTI)

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells J. Schörmann,a S and multiple quantum wells. The well widths ranged from 2.5 to 7.5 nm. Samples were grown by rf-plasma assisted wells clear reflection high energy electron diffraction oscillations were observed indicating a two

As, Donat Josef

272

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

273

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN  

E-Print Network (OSTI)

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN Christian in green light emitting diodes is one of the big challenges towards all-solid- state lighting. The prime,3], and commercialization [4,5] of high brightness light emitting diodes LEDs has led to a 1.82 Billion-$/year world market

Detchprohm, Theeradetch

274

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network (OSTI)

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

275

Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells  

Science Conference Proceedings (OSTI)

We investigate the incorporation of nitrogen into (Ga,In)Sb grown on GaSb and report room temperature photoluminescence from GaInSb(N) quantum wells. X-ray diffraction and channeling nuclear reaction analysis, together with Rutherford backscattering, were employed to identify the optimal molecular beam epitaxial growth conditions that minimized the incorporation of non-substitutional nitrogen into GaNSb. Consistent with this hypothesis, GaInSb(N) quantum wells grown under the conditions that minimized non-substitutional nitrogen exhibited room temperature photoluminescence, indicative of significantly improved radiative efficiency. Further development of this material system could enable type-I laser diodes emitting throughout the (3-5 {mu}m) wavelength range.

Nair, Hari P.; Crook, Adam M.; Bank, Seth R. [Microelectronics Research Center, Electrical and Computer Engineering, University of Texas at Austin, 10100 Burnet Rd, Austin, Texas 78712 (United States); Yu, Kin M. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2012-01-09T23:59:59.000Z

276

GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy  

Science Conference Proceedings (OSTI)

We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments.

Smakman, E. P.; Garleff, J. K.; Rambabu, P.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5612 AZ (Netherlands); Young, R. J.; Hayne, M. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2012-04-02T23:59:59.000Z

277

Survival Differences by Race/Ethnicity and Treatment for Localized Hepatocellular Carcinoma Within the United States  

E-Print Network (OSTI)

Atlanta, Connecticut, Detroit, Hawaii, Iowa, New Mexico,CI Francisco-Oakland, Detroit, Los Angeles, Greater Califor-any treatment. For example, in Detroit only 5.2% of blacks

Wong, Robert J.; Corley, Douglas A.

2009-01-01T23:59:59.000Z

278

Nomination Form DEPARTMENT / UNIT  

E-Print Network (OSTI)

Nomination Form DEPARTMENT / UNIT: CAMPUS ADDRESS: JOB TITLE: DEPARTMENT EMAIL ADDRESS: DEPARTMENT TELEPHONE: 2014 FRANKLIN STAFF EXCELLENCE AWARDS START DATE IN DEPARTMENT / UNIT: Nominee Information NAME / RESEARCHPROFESSIONAL Signature of Head / Director of Nominee's Unit: NOMINATION PACKET DEADLINE: MARCH 7, 2014 PLEASE

Arnold, Jonathan

279

Nomination Form DEPARTMENT / UNIT  

E-Print Network (OSTI)

Nomination Form DEPARTMENT / UNIT: CAMPUS ADDRESS: JOB TITLE: DEPARTMENT EMAIL ADDRESS: DEPARTMENT TELEPHONE: 2012 FRANKLIN STAFF EXCELLENCE AWARDS START DATE IN DEPARTMENT / UNIT: Nominee Information NAME / RESEARCHPROFESSIONAL Signature of Head / Director of Nominee's Unit: NOMINATION PACKET DEADLINE: FRIDAY MARCH 2, 2012

Arnold, Jonathan

280

Nomination Form DEPARTMENT / UNIT  

E-Print Network (OSTI)

Nomination Form DEPARTMENT / UNIT: CAMPUS ADDRESS: JOB TITLE: DEPARTMENT EMAIL ADDRESS: DEPARTMENT TELEPHONE: 2011 FRANKLIN STAFF EXCELLENCE AWARDS START DATE IN DEPARTMENT / UNIT: Nominee Information NAME / RESEARCHPROFESSIONAL Signature of Head / Director of Nominee's Unit: NOMINATION PACKET DEADLINE: FRIDAY MARCH 4, 2011

Arnold, Jonathan

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281

Nomination Form DEPARTMENT / UNIT  

E-Print Network (OSTI)

Nomination Form DEPARTMENT / UNIT: CAMPUS ADDRESS: JOB TITLE: DEPARTMENT EMAIL ADDRESS: DEPARTMENT TELEPHONE: 2013 FRANKLIN STAFF EXCELLENCE AWARDS START DATE IN DEPARTMENT / UNIT: Nominee Information NAME / RESEARCHPROFESSIONAL Signature of Head / Director of Nominee's Unit: NOMINATION PACKET DEADLINE: MARCH 5, 2013 PLEASE

Arnold, Jonathan

282

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

DOE Green Energy (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

283

Dielectrics for GaN based MIS-diodes  

SciTech Connect

GaN MIS diodes were demonstrated utilizing AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as insulators. A 345 {angstrom} of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) growth, a multi MBE chamber was used and a 195 {angstrom} oxide is E-beam evaporated from a single crystal source of Ga{sub 5}Gd{sub 3}O{sub 12}. The forward breakdown voltage of AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) diodes are 5V and 6V, respectively, which are significantly improved from {approximately} 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.

Ren, F.; Abernathy, C.R.; MacKenzie, J.D. [Univ. of Florida, Gainesville, FL (United States)] [and others

1998-02-01T23:59:59.000Z

284

Atomic hydrogen cleaning of polarized GaAs photocathodes  

DOE Green Energy (OSTI)

Atomic hydrogen cleaning followed by heat cleaning at 450 C was used to prepare negative-electron-affinity GaAs photocathodes. When hydrogen ions were eliminated, quantum efficiencies of 15% were obtained for bulk GaAs cathodes, higher than the results obtained using conventional 600 C heat cleaning. The low-temperature cleaning technique was successfully applied to thin, strained GaAs cathodes used for producing highly polarized electrons. No depolarization was observed even when the optimum cleaning time of about 30 seconds was extended by a factor of 100.

Maruyama, Takashi

2003-04-03T23:59:59.000Z

285

Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-08-01T23:59:59.000Z

286

On-Sun Comparison of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

This study compares the on-sun performance of a set of GaInP2/GaAs tandem cells with different GaInP2 top-cell thicknesses. Because high-efficiency III-V cells are best suited to concentrating photovoltaic (CPV) applications, the cells were mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for an ''air mass 1.5 global'' (AM 1.5G) or a ''low aerosol optical depth'' (Low AOD) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra to predict the correct result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emery, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-02-01T23:59:59.000Z

287

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells  

E-Print Network (OSTI)

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells H. C. Chui, S. M. Lord report the first observation of intersubband transitions in In,Ga, -#s(y=O.3,0.5)/ AlGaAs quantum wells. These quantum wells were grown on a GaAs substrate with a linearly graded InGaAs buffer to achieve strain

Fejer, Martin M.

288

U.S. LNG Imports from United Arab Emirates  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

289

U.S. LNG Imports from United Arab Emirates  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

290

Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer  

Science Conference Proceedings (OSTI)

We investigate the strain properties of GaN films grown by plasma-assisted molecular beam epitaxy on Si(110) substrates. It is found that the strain of the GaN film can be converted from a tensile to a compressive state simply by inserting a thin AlN/GaN superlattice structure (SLs) within the GaN film. The GaN layers seperated by the SLs can have different strain states, which indicates that the SLs plays a key role in the strain modulation during the growth and the cooling down processes. Using this simple technique, we grow a crack-free GaN film exceeding 2-{mu}m-thick. The realization of the compressively strained GaN film makes it possible to grow thick GaN films without crack generation on Si substrates for optic and electronic device applications.

Shen, X. Q.; Takahashi, T.; Kawashima, H.; Ide, T.; Shimizu, M. [Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568 (Japan)

2012-07-16T23:59:59.000Z

291

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network (OSTI)

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

292

CO2 Emissions - United Korea  

NLE Websites -- All DOE Office Websites (Extended Search)

Fossil Fuel CO2 Emissions Regional Centrally Planned Asia United Korea CO2 Emissions from United Korea Data graphic Data CO2 Emissions from United Korea...

293

Atlanta, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.7489954°, -84.3879824° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.7489954,"lon":-84.3879824,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

294

Ghost towers : distressed condominium investing in Atlanta  

E-Print Network (OSTI)

The purpose of this paper is to explore investment opportunities in these now-distressed residential condo properties. The paper will characterize the economic and development environment to determine the extent of ...

Whalen, Faraji L

2009-01-01T23:59:59.000Z

295

IEEE Energy2030 Atlanta, Georgia, USA  

E-Print Network (OSTI)

principles that limit its ability to handle the key energy challenges of the 21st century. We propose be sized to handle peak demand levels, which are significantly higher than average demand and may sources. The grid was designed for central, large-scale, predictable power sources such as coal, natural

Ratnasamy, Sylvia

296

Microsoft Word - Atlanta Agenda FINAL _2_.doc  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

South Mississippi Electric Power Association Ed Ernst, Director, Transmission Planning, Duke Energy Terry Huval, Director, Lafayette Utilities System Ron Carlson, Project...

297

Clean Cities: Clean Cities-Atlanta coalition  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Skip to Content U.S. Department of Energy Energy Efficiency and Renewable Energy EERE Home | Programs & Offices | Consumer Information Clean Cities Search Search Help Clean Cities...

298

Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep...

299

Lattice vibrations of pure and doped GaSe  

Science Conference Proceedings (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

300

HH5, Antiferromagnetic Interlayer Exchange Couplings in Ga  

Science Conference Proceedings (OSTI)

Author(s), Sun Jae Chung, Sanghoon Lee, Brian J. Kirby, Julie A. Borchers, ... LATE NEWS: KK3, Non-Catalytic Synthesis of GaN Nanostructures at Low...

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Preparation of GaAs photocathodes at low temperature  

SciTech Connect

The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has a number of disadvantages. Here, a variety of cleaning techniques related to preparation of an atomically clean GaAs surface without heating to 600 C are discussed and evaluated.

Mulhollan, G.; Clendenin, J.; Tang, H.

1996-10-01T23:59:59.000Z

302

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Trinidad and Tobago (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul...

303

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

304

Elba Island, GA Liquefied Natural Gas Total Imports (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Total Imports (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Total Imports (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5...

305

GaAs Films Prepared by RF-Magnetron Sputtering  

DOE Green Energy (OSTI)

The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

2001-08-01T23:59:59.000Z

306

Micro Raman Spectroscopy of Annealed Erbium Implanted GaN  

E-Print Network (OSTI)

Wurtzite GaN epilayers grown by metal organic chemical vapor deposition on sapphire substrates were subsequently ion implanted with Er to a dose of 510? cm?. The implanted samples were annealed in nitrogen atmosphere ...

Vajpeyi, Agam P.

307

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Equatorial Guinea (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Equatorial Guinea (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

308

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Nigeria (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Nigeria (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

309

Cathodoluminescence Microanalysis of Suspended GaN Nano ...  

Science Conference Proceedings (OSTI)

CL from bulk GaN is dominated by the ~3.4 eV near-band-edge emission. In contrast, the suspended nano-membranes emit a broad defect associated emission...

310

BB2, Novel Cs-Free GaN Photocathodes  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

311

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN  

Science Conference Proceedings (OSTI)

We investigate, via time-resolved photoluminescence, the temperature-dependence of charge carrier recombination mechanisms in nonpolar (Al,Ga)N/GaN single quantum wells (QWs) grown via molecular beam epitaxy on the a-facet of bulk GaN crystals. We study the influence of both QW width and barrier Al content on the dynamics of excitons in the 10-320 K range. We first show that the effective lifetime of QW excitons {tau} increases with temperature, which is evidence that nonradiative mechanisms do not play any significant role in the low-temperature range. The temperature range for increasing {tau} depends on the QW width and Al content in the (Al,Ga)N barriers. For higher temperatures, we observe a reduction in the QW emission lifetime combined with an increase in the decay time for excitons in the barriers, until both exciton populations get fully thermalized. Based on analysis of the ratio between barrier and QW emission intensities, we demonstrate that the main mechanism limiting the radiative efficiency in our set of samples is related to nonradiative recombination in the (Al,Ga)N barriers of charge carriers that have been thermally emitted from the QWs.

Corfdir, P.; Dussaigne, A.; Giraud, E.; Ganiere, J.-D.; Grandjean, N.; Deveaud-Pledran, B. [Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Teisseyre, H. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Suski, T.; Grzegory, I. [Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Lefebvre, P. [Laboratoire Charles Coulomb - UMR5221 - CNRS - Universite Montpellier 2, 34095 Montpellier (France)

2012-02-01T23:59:59.000Z

312

Modeling of InGaSb thermophotovoltaic cells and materials  

DOE Green Energy (OSTI)

A closed form computer program has been developed for the simulation and optimization of In{sub x}Ga{sub 1{minus}x}Sb thermophotovoltaic cells operating at room temperature. The program includes material parameter models of the energy bandgap, optical absorption constant, electron and hole mobility, intrinsic carrier concentration and index of refraction for any composition of GaInSb alloys.

Zierak, M.; Borrego, J.M.; Bhat, I.; Gutmann, R.J. [Rensselaer Polytechnic Inst., Troy, NY (United States); Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

313

SEU design consideration for MESFETs on LT GaAs  

SciTech Connect

Computer simulation results are reported on transistor design and single-event charge collection modeling of metal-semiconductor field effect transistors (MESFETs) fabricated in the Vitesse H-GaAsIII{reg_sign} process on Low Temperature grown (LT) GaAs epitaxial layers. Tradeoffs in Single Event Upset (SEU) immunity and transistor design are discussed. Effects due to active loads and diffusion barriers are examined.

Weatherford, T.R.; Radice, R.; Eskins, D. [Naval Postgraduate School, Monterey, CA (United States)] [and others

1997-12-01T23:59:59.000Z

314

BNL United Way Campaign  

NLE Websites -- All DOE Office Websites (Extended Search)

about Long Island issues and challenges. Because we care, we come together to raise money towards The United Way of Long Island, which provides "services to children and...

315

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

'OQOl - United States Government - Department of Energy National Nuclear Security Administration memorandum January 19, 201 1 DATE. REPLY TO ATTN OF: Y12-60:Gorman SUBJECT ANNUAL...

316

UnitOverview  

NLE Websites -- All DOE Office Websites (Extended Search)

UNIT OVERVIEW A general overview of LHC physics, accelerator and detector design, and how data inform claims and reasoning begins with an exploration of the "Big Questions" that...

317

Redefining the SI Units  

Science Conference Proceedings (OSTI)

... and accuracy, simplify and normalize the unit definitions, and liberate the system from dependence on the prototype kilogram, an artifact adopted in ...

2013-06-24T23:59:59.000Z

318

Base unit definitions: Kilogram  

Science Conference Proceedings (OSTI)

... Unit of mass (kilogram), Abbreviations: CGPM, CIPM, BIPM. At the end of the 18th century, a kilogram was the mass of a cubic decimeter of water. ...

319

United States Patent  

NLE Websites -- All DOE Office Websites (Extended Search)

( 1 of 1 ) United States Patent 6,994,831 Gentile , et al. February 7, 2006 Oxidative tritium decontamination system Abstract The Oxidative Tritium Decontamination System, OTDS,...

320

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

0 Appliances in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South...

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

8 Home Appliances in Homes in Northeast Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"Northeast Census Region" ,,,"New England Census Division",,,"Middle...

322

Rooftop Unit Campaign  

NLE Websites -- All DOE Office Websites (Extended Search)

919-943-7291 April 4, 2013 BTO Program Review 2 | Building Technologies Office eere.energy.gov Purpose & Objectives - Problem Statement * Packaged rooftop units (RTUs)...

323

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

to this report. INTRODUCTION AND OBJECTIVE The European Laboratory for Particle Physics, CERN, in collaboration with the United States (U.S.) and other non-member states,...

324

Influence of defect formation as a result of incorporation of a Mn {delta} layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells  

Science Conference Proceedings (OSTI)

The influence of defect formation upon the deposition of a Mn {delta} layer and a GaAs coating layer (with the use of laser evaporation) on the photosensitivity spectra of heterostructures with InGaAs/GaAs quantum wells located in the near-surface region has been studied.

Gorshkov, A. P., E-mail: gorskovap@phys.unn.ru; Karpovich, I. A.; Pavlova, E. D.; Kalenteva, I. L. [Lobachevsky State University of Nizhny Novgorod (Russian Federation)

2012-02-15T23:59:59.000Z

325

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures  

E-Print Network (OSTI)

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures, U.S.A. ABSTRACT Characterization of operational AlGaInN heterostructure light emitting diodes (LEDs the device lifetime in a non-destructive mode. INTRODUCTION Group ­ III nitride light emitting diodes (LEDs

Wetzel, Christian M.

326

Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells  

Science Conference Proceedings (OSTI)

Exciton photoluminescence spectra, photoluminescence excitation spectra, and magnetophotoluminescence spectra of single (GaAs/AlGaAs/ZnMnSe) and double (GaAs/AlGaAs/ZnSe/ZnCdMnSe) heterovalent quantum wells formed by molecular beam epitaxy are studied. It is shown that the exciton absorption spectrum of such quantum wells mainly reproduces the resonant exciton spectrum expected for usual quantum wells with similar parameters, while the radiative exciton recombination have substantial distinctions, in particular the additional localization mechanism determined by defects generated by heterovalent interface exists. The nature of these localization centers is not currently clarified; their presence leads to broadening of photoluminescence lines and to an increase in the Stokes shift between the peaks of luminescence and absorption, as well as determining the variation in the magnetic g factor of bound exciton complexes.

Toropov, A. A., E-mail: toropov@beam.ioffe.ru; Kaibyshev, V. Kh.; Terent'ev, Ya. V.; Ivanov, S. V.; Kop'ev, P. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2011-02-15T23:59:59.000Z

327

Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires  

SciTech Connect

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on a Si substrate by molecular beam epitaxy are examined using a variety of optical characterization techniques, including cw- and time-resolved photoluminescence and optically detected magnetic resonance (ODMR). Superior optical quality of the structures is demonstrated based on the observation of intense emission from a single NW at room temperature. This emission is shown to originate from radiative transitions within N-related localized states. From ODMR, growth of GaP/GaNP NWs is also found to facilitate formation of complex defects containing a P atom at its core that act as centers of competing non-radiative recombination.

Dobrovolsky, A.; Stehr, J. E.; Chen, S. L.; Chen, W. M.; Buyanova, I. A. [Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping (Sweden); Kuang, Y. J. [Department of Physics, University of California, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Materials Science and Engineering, La Jolla, California 92093 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093 (United States)

2012-10-15T23:59:59.000Z

328

Optical anisotropy of GaSb type-II nanorods on vicinal (111)B GaAs  

SciTech Connect

We form self-assembled GaSb type-II nanorods on a vicinal (111)B GaAs substrate by molecular beam epitaxy and study their optical anisotropy. The GaSb nanorods are elongated and aligned along the [-1 0 1] direction, where the average length, width, and height are about 84, 30, and 2.5 nm. In polarized photoluminescence (PL) measurements, the peak of the GaSb nanorods is observed at about 1.1 eV, where the PL intensity is largest for the [-1 0 1] polarization and smallest for the polarization perpendicular to it. The degree of polarization is more than 20% and depends on the recombination energy. By comparing with a theoretical model based on 4 x 4 Luttinger-Kohn Hamiltonian, we find that the experimental results are explained by considering the Sb/As inter-diffusion and the nanorod height distribution.

Kawazu, Takuya; Noda, Takeshi; Mano, Takaaki; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Akiyama, Yoshihiro [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan); Sakaki, Hiroyuki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan)

2011-12-05T23:59:59.000Z

329

EE9, MBE Grown InGaAsSbN/GaSb Single Quantum Wells for Mid ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

330

II3, 2?m Thick Device Quality GaN on Si(111) Using AlGaN Graded ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

331

JJ1, Internal Quantum Efficiency of Polar and Non-Polar GaInN/GaN ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

332

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods  

E-Print Network (OSTI)

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

2013-01-01T23:59:59.000Z

333

SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors  

Science Conference Proceedings (OSTI)

Hydrothermally grown SnO2 was integrated with AlGaN/GaN high electron mobility transistor (HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO2 was improved after annealing at 400 C. The grain growth kinetics of the SnO2 nanomaterials, together with the O2 gas sensing properties and sensing mechanism of the SnO2 gated HEMT sensors were investigated. Detection of 1% oxygen in nitrogen at 100 C was possible. A low operation temperature and low power consumption oxygen sensor can be achieved by combining the SnO2 films with the AlGaN/GaN HEMT structure

Hung, S.T. [Feng Chia University, Taichung, Taiwan; Chung, Chi-Jung [Feng Chia University, Taichung, Taiwan; Chen, Chin Ching [University of Florida, Gainesville; Lo, C. F. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

334

Summary Max Total Units  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Max Total Units Max Total Units *If All Splits, No Rack Units **If Only FW, AC Splits 1000 52 28 28 2000 87 59 35 3000 61 33 15 4000 61 33 15 Totals 261 153 93 ***Costs $1,957,500.00 $1,147,500.00 $697,500.00 Notes: added several refrigerants removed bins from analysis removed R-22 from list 1000lb, no Glycol, CO2 or ammonia Seawater R-404A only * includes seawater units ** no seawater units included *** Costs = (total units) X (estimate of $7500 per unit) 1000lb, air cooled split systems, fresh water Refrig Voltage Cond Unit IF-CU Combos 2 4 5 28 References Refrig Voltage C-U type Compressor HP R-404A 208/1/60 Hermetic SA 2.5 R-507 230/1/60 Hermetic MA 2.5 208/3/60 SemiHerm SA 1.5 230/3/60 SemiHerm MA 1.5 SemiHerm HA 1.5 1000lb, remote rack systems, fresh water Refrig/system Voltage Combos 12 2 24 References Refrig/system Voltage IF only

335

Composite stabilizer unit  

DOE Patents (OSTI)

This invention is comprised of an improved fin stabilized projectile including multiple stabilizer fins upon a stabilizer unit situated at the aft end of the projectile is provided, the improvement wherein the stabilizer fins are joined into the stabilizer unit by an injection molded engineering grade polymer.

Ebaugh, L.R.; Sadler, C.P.; Carter, G.D.

1990-12-31T23:59:59.000Z

336

Composite stabilizer unit  

DOE Patents (OSTI)

This invention is comprised of an improved fin stabilized projectile including multiple stabilizer fins upon a stabilizer unit situated at the aft end of the projectile is provided, the improvement wherein the stabilizer fins are joined into the stabilizer unit by an injection molded engineering grade polymer.

Ebaugh, L.R.; Sadler, C.P.; Carter, G.D.

1990-01-01T23:59:59.000Z

337

Composite stabilizer unit  

SciTech Connect

An improved fin stabilized projectile including multiple stabilizer fins upon a stabilizer unit situated at the aft end of the projectile is provided, the improvement wherein the stabilizer fins are joined into the stabillizer unit by an injection molded engineering grade polymer.

Ebaugh, Larry R. (Los Alamos, NM); Sadler, Collin P. (Los Alamos, NM); Carter, Gary D. (Espanola, NM)

1992-01-01T23:59:59.000Z

338

Associative list processing unit  

SciTech Connect

An associative list processing unit and method comprising employing a plurality of prioritized cell blocks and permitting inserts to occur in a single clock cycle if all of the cell blocks are not full. Also, an associative list processing unit and method comprising employing a plurality of prioritized cell blocks and using a tree of prioritized multiplexers descending from the plurality of cell blocks.

Hemmert, Karl Scott; Underwood, Keith D.

2013-01-29T23:59:59.000Z

339

High Voltage GaN Schottky Rectifiers  

SciTech Connect

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25T23:59:59.000Z

340

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network (OSTI)

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Elimination of charge-enhancement effects in GaAs FETs with a low-temperature grown GaAs buffer layer  

Science Conference Proceedings (OSTI)

The use of low temperature grown GaAs (LT GaAs) buffer layer in GaAs FETs is shown via computer simulation and experimental measurement to reduce ion-induced charge collection by two to three orders of magnitude. This reduction in collected charge is associated with the efficient reduction of charge-enhancement mechanisms in the FETs. Error rate calculations indicate that the soft error rate of LT GaAs integrated circuits will be reduced by several orders of magnitude when compared to conventional FET-based GaAs ICs.

McMorrow, D.; Weatherford, T.R.; Curtice, W.R.; Knudson, A.R.; Buchner, S.; Melinger, J.S.; Tran, L.H.; Campbell, A.B. [Naval Research Lab., Washington, DC (United States)

1995-12-01T23:59:59.000Z

342

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

343

CC2, Two-Dimensional Electron Gas in In X Al 1-X N/Aln/GaN ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

344

Phonon Knudsen flow in GaAs/AlAs superlattices  

DOE Green Energy (OSTI)

The measured in-plane thermal conductivity, {delta}{sub SL} of GaAs/AlAs superlattices with even moderate layer thicknesses are significantly smaller than the weighted average, {delta}{sub l} = 67 W/Km, of the bulk GaAs and AlAs conductivities. One expects a suppression of the thermal conductivity to that of an actual Al{sub 0.5}Ga{sub 0.5}As alloy when the thickness of the GaAs and AlAs layers approaches that of a single monolayer. However, the observed superlattice thermal conductivity remains suppressed even at layer thickness {approx_gt} 10 nm. The low thermal conductivities, and very high mobilities, make n-doped GaAs/AlAs superlattices attractive possibilities for thermoelectric devices. With Molecular-Beam-Epitaxial grown GaAs/AlAs superlattices one can expect the individual GaAs and AlAs layers to be extremely clean. Defect and/or alloy scattering is limited to be near the heterostructure interfaces. The authors estimate the room-temperature phonon mean-free-path to be 42 (22) nm for the longitudinal (transverse) mode and thus comparable to or smaller than the layer thicknesses. Thus they expect an important phonon scattering at the interfaces. They study this phonon scattering at the superlattice interfaces assuming a Knudsen flow characterized by diffusive scattering. The solid curve in the figure shows the Knudsen-flow theory estimated for the superlattice thermal conductivity which shows a significant reduction when the layer thickness is shorter than the estimated phonon mean free paths.

Hyldgaard, P.; Mahan, G.D. [Oak Ridge National Lab., TN (United States). Solid State Div.]|[Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy

1995-09-01T23:59:59.000Z

345

Strain relaxation in GaN/Al{sub x}Ga{sub 1-x}N superlattices grown by plasma-assisted molecular-beam epitaxy  

SciTech Connect

We have investigated the misfit relaxation process in GaN/Al{sub x}Ga{sub 1-x}N (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 10{sup 8} cm{sup -2} to 2 x 10{sup 9} cm{sup -2}. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 10{sup 10} cm{sup -2}. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

Kotsar, Y.; Bellet-Amalric, E.; Das, A.; Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 Rue des Martyrs, 38054 Grenoble cedex 9 (France); Doisneau, B. [SIMaP, Grenoble INP, Domaine Universitaire, BP 75, 38402 Saint Martin d'Heres (France); Sarigiannidou, E. [LMGP, Grenoble INP, 3 Parvis Louis Neel, BP 257, 38016 Grenoble cedex 1 (France)

2011-08-01T23:59:59.000Z

346

Window solar heating unit  

SciTech Connect

The unit may be mounted either in a window or between the studs of a building that is to be supplied with solar heat. The bottom of the unit extends farther from the building than the top and is wider than the top of the unit such that the transparent side away from the building has an arcuate form and is gradually flared outwardly in a downward direction to increase the exposure to the sun during the day. A plurality of absorptive tubes within the unit are slanted from the upper portion of the unit downwardly and outwardly to the front arcuate portion of the bottom. Openings between the unit and the building are provided for air flow, and a thermostatically controlled fan is mounted in one of the openings. A baffle is mounted between the absorptive tubes and the mounting side of the solar heating unit, and the surfaces of the baffle and the absorptive tubes are painted a dull black for absorbing heat transmitted from the sun through the transparent, slanting side.

Davis, E.J.

1978-09-12T23:59:59.000Z

347

Testing of ethylene propylene seals for the GA-4/GA-9 casks  

SciTech Connect

The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

Boonstra, R.H.

1993-08-01T23:59:59.000Z

348

EIS-0476: Vogtle Electric Generating Plant, Units 3 and 4 | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

76: Vogtle Electric Generating Plant, Units 3 and 4 76: Vogtle Electric Generating Plant, Units 3 and 4 EIS-0476: Vogtle Electric Generating Plant, Units 3 and 4 Summary This EIS evaluates the environmental impacts of construction and startup of the proposed Units 3 and 4 at the Vogtle Electric Generating Plant in Burke County, Georgia. DOE adopted two Nuclear Regulatory Commission EISs associated with this project (i.e., NUREG-1872, issued 8/2008, and NUREG-1947, issued 3/2011). Public Comment Opportunities No public comment opportunities available at this time. Documents Available for Download February 17, 2012 EIS-0476: Notice of Adoption of Final Environmental Impact Statement Vogtle Electric Generating Plant, Units 3 and 4, Issuance of a Loan Guarantee to Support Funding for Construction, Burke County, GA

349

Next Generation Rooftop Unit  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Next Generation Rooftop Unit - Next Generation Rooftop Unit - CRADA Bo Shen Oak Ridge National Laboratory shenb@ornl.gov; 865-574-5745 April 3, 2013 ET R&D project in support of DOE/BTO Goal of 50% Reduction in Building Energy Use by 2030. CRADA project with Trane TOP US Commercial HVAC Equipment OEM 2 | Building Technologies Office eere.energy.gov Purpose & Objectives Problem Statement: half of all US commercial floor space cooled by packaged AC units, consumes more than 1.0 Quad source energy/year; highly efficient systems needed

350

Next Generation Rooftop Unit  

NLE Websites -- All DOE Office Websites (Extended Search)

Next Generation Rooftop Unit - Next Generation Rooftop Unit - CRADA Bo Shen Oak Ridge National Laboratory shenb@ornl.gov; 865-574-5745 April 3, 2013 ET R&D project in support of DOE/BTO Goal of 50% Reduction in Building Energy Use by 2030. CRADA project with Trane TOP US Commercial HVAC Equipment OEM 2 | Building Technologies Office eere.energy.gov Purpose & Objectives Problem Statement: half of all US commercial floor space cooled by packaged AC units, consumes more than 1.0 Quad source energy/year; highly efficient systems needed

351

Nanostructuring of silicon substrates for the site-controlled growth of GaAs/In0.15Ga0.85As/GaAs nanostructures  

Science Conference Proceedings (OSTI)

We report the optimization of electron beam lithography and inductively coupled plasma (ICP) dry etching processes to fabricate pre-patterned Si (100) substrates with sub-100nm holes with controlled size and shape. An efficient in situ cleaning sequence ... Keywords: Electron beam lithography, ICP dry etching, InGaAs quantum dots, MBE growth, Nanostructuring of silicon

Muhammad Usman; Tariq Alzoubi; Mohamed Benyoucef; Johann Peter Reithmaier

2012-09-01T23:59:59.000Z

352

United Cool Air  

Energy.gov (U.S. Department of Energy (DOE))

While our process may start with a "basic model" it is seldom that we fabricate more than a few units that are identical. Therefore, the definition of "basic model" has a large impact on the...

353

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

the 2009 Poverty Guidelines for families published by the U.S. Department of Health and Human Services. 3Use of heating equipment for another housing unit also includes the use...

354

United States Government  

Office of Legacy Management (LM)

"- .-A*" (MQ) EfG (07-W) United States Government rrla.g-a Department of Energy memorandum DATE: tlEC 1 F: l??? REPLYTo EM-421 (W. A. W illiams , 903-8149) AJTN OF: SUBJECT:...

355

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

that do not contain a storage tank. The water is only heated as it passes through the heat exchanger. 3Use of a water heater for another housing unit also includes the use of...

356

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

that do not contain a storage tank. The water is only heated as it passes through the heat exchanger. 4Use of a water heater for another housing unit also includes the use of...

357

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

5 Appliances in U.S. Homes, by Household Income, 2009" " Million Housing Units, Final" ,,"Household Income" ,"Total U.S.1 (millions)",,,"Below Poverty Line2" ,,"Less than...

358

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

3 Appliances in U.S. Homes, by Year of Construction, 2009" " Million Housing Units, Final" ,,"Year of Construction" ,"Total U.S.1 (millions)" ,,"Before 1940","1940 to 1949","1950...

359

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

6 Appliances in U.S. Homes, by Climate Region, 2009" " Million Housing Units, Final" ,,"Climate Region2" ,"Total U.S.1 (millions)" ,,"Very Cold","Mixed- Humid","Mixed-Dry"...

360

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network (OSTI)

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

362

High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report the highest mobility values above 2000 cm{sup 2}/Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Inagaki, Makoto [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Aichi (Japan); Yamaguchi, Masafumi [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Aichi (Japan)

2012-11-26T23:59:59.000Z

363

Black-body radiation shift of the Ga$^{+}$ clock transition  

E-Print Network (OSTI)

The blackbody radiation shift of the Ga$^+$ $4s^2 \\ ^1S^e_0 \\to 4s4p \\ ^3P^o_0$ clock transition is computed to be $-$$0.0140 \\pm 0.0048$ Hz at 300 K. The small shift is consistent with the blackbody shifts of the clock transitions of other group III ions which are of a similar size. The polarizabilities of the Ga$^+$ $4s^2 \\ ^1S^e_0$, $4s4p \\ ^3P^o_0$, and $4s4p \\ ^1P^o_1$ states were computed using the configuration interaction method with an underlying semi-empirical core potential. A byproduct of the analysis involved large scale calculations of the low lying spectrum and oscillator strengths of the Ga$^{2+}$ ion.

Cheng, Yongjun

2013-01-01T23:59:59.000Z

364

Aug. 8-9, 2006 HAPL meeting, GA Open Discussion on Advanced Armor  

E-Print Network (OSTI)

Aug. 8-9, 2006 HAPL meeting, GA 1 Open Discussion on Advanced Armor Concepts Moderated by A. René in case the W armor does not work. #12;Aug. 8-9, 2006 HAPL meeting, GA 3 Roman Aquaduct at Pont du Gard, Provence #12;Aug. 8-9, 2006 HAPL meeting, GA 4 Possible Advanced Armor Options Include: · Engineered

Raffray, A. René

365

Current injection efficiency of InGaAsN quantum-well lasers Nelson Tansua  

E-Print Network (OSTI)

Current injection efficiency of InGaAsN quantum-well lasers Nelson Tansua Department of Electrical-threshold current injection efficiency of quantum well QW lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200 nm emitting InGaAs and 1300 nm emitting InGaAsN QW

Gilchrist, James F.

366

ANN-based GA for generating the sizing curve of stand-alone photovoltaic systems  

Science Conference Proceedings (OSTI)

Recent advances in artificial intelligence techniques have allowed the application of such technologies in real engineering problems. In this paper, an artificial neural network-based genetic algorithm (ANN-GA) model was developed for generating the ... Keywords: ANN, ANN-GA, GA, Prediction, Sizing curve, Stand-alone PV system

Adel Mellit

2010-05-01T23:59:59.000Z

367

Luminescence Enhancement in InGaN and ZnO by Water Vapor ...  

Science Conference Proceedings (OSTI)

Dependence of Ag/In Ratio of AgInS2 Crystals Grown by Hot-Press Method ... Analysis of Temperature Characteristics of InGaP/InGaAs/Ge Triple-Junction Solar Cell ... Luminescence Enhancement in InGaN and ZnO by Water Vapor Remote...

368

Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a  

E-Print Network (OSTI)

is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

Okamoto, Koichi

369

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network (OSTI)

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

370

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs  

E-Print Network (OSTI)

The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate ...

Piner, Edwin L.

371

Vertically aligned GaN nanotubes - Fabrication and current image analysis  

Science Conference Proceedings (OSTI)

In this work, we present a one step formation method of nanotubes on GaN film, and then map out local current of nanotubes. GaN nanotubes were formed by inductively coupled plasma (ICP) etching and found that tops of these nanotubes were hexagonal with ... Keywords: C-AFM, FESEM, GaN, ICP, Nanotubes

Shang-Chao Hung; Yan-Kuin Su; Shoou-Jinn Chang; Y. H. Chen

2006-11-01T23:59:59.000Z

372

Epitaxial EuO thin films on GaAs  

SciTech Connect

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 deg., a significant remanent magnetization, and a Curie temperature of 69 K.

Swartz, A. G.; Ciraldo, J.; Wong, J. J. I.; Li Yan; Han Wei; Lin Tao; Shi, J.; Kawakami, R. K. [Department of Physics and Astronomy, University of California, Riverside, California 92521 (United States); Mack, S.; Awschalom, D. D. [Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106 (United States)

2010-09-13T23:59:59.000Z

373

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

374

AlP/GaP distributed Bragg reflectors  

SciTech Connect

Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

2013-07-15T23:59:59.000Z

375

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

376

Electron Hall Mobility in GaAsBi  

Science Conference Proceedings (OSTI)

We present measurements of the electron Hall mobility in n-type GaAs{sub 1-x}Bi{sub x} epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration ({ge} 1.6%) some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism.

Kini, R. N.; Bhusal, L.; Ptak, A. J.; France, R.; Mascarenhas, A.

2009-01-01T23:59:59.000Z

377

Analyzing the growth of In{sub x}Ga{sub 1-x}N/GaN superlattices in self-induced GaN nanowires by x-ray diffraction  

Science Conference Proceedings (OSTI)

Self-induced GaN nanowires are grown by plasma-assisted molecular beam epitaxy, with In{sub x}Ga{sub 1-x}N quantum wells inserted to form an axial superlattice. From the {omega}-2{theta} scans of a laboratory x-ray diffraction experiment, we obtain the superlattice period, the thickness of the quantum wells, and the In content in this layer. The axial growth rate of the In{sub x}Ga{sub 1-x}N quantum wells is significantly enhanced, which we attribute to increased Ga diffusion along the nanowire sidewalls in the presence of In.

Woelz, M.; Kaganer, V. M.; Brandt, O.; Geelhaar, L.; Riechert, H.

2011-06-27T23:59:59.000Z

378

Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched to GaAs: Preprint  

Science Conference Proceedings (OSTI)

This conference paper describes the deep-level transient spectroscopy (DLTS) measurements have been performed on the quaternary semiconductor InGaAsN. A series of as-grown, metal-organic chemical vapor deposited samples having varying composition were grown and measured. A GaAs sample was used as a baseline for comparison. After adding only In to GaAs, we did not detect significant additional defects; however, adding N and both N and In led to larger hole-trap peaks and additional electron-trap peaks in the DLTS data. The samples containing about 2% N, with and without about 6% In, had electron traps with activation energies of about 0.2 and 0.3 eV. A sample with 0.4% N had an electron trap with an activation energy of 0.37 eV.

Johnston, S. W.; Ahrenkiel, R. K.; Friedman, D. J.; Kurtz, S. R.

2002-05-01T23:59:59.000Z

379

Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets  

Science Conference Proceedings (OSTI)

Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

Chu, Kuei-Yi [National Cheng-Kung University, Institute of Microelectronics, Department of Electrical Engineering (China); Chiang, Meng-Hsueh, E-mail: mhchiang@niu.edu.tw; Cheng, Shiou-Ying, E-mail: sycheng@niu.edu.tw [National II an University, Department of Electronic Engineering (China); Liu, Wen-Chau [National Cheng-Kung University, Institute of Microelectronics, Department of Electrical Engineering (China)

2012-02-15T23:59:59.000Z

380

Second United Nations  

NLE Websites -- All DOE Office Websites (Extended Search)

Nations Nations . DISCLAIMER This report was prepared a s an account of work sponsored by an agency of the United States Government. Neither t h e United States Government nor any agency thereof, nor any of their employees, make any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof. The views and

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

.2/06 WED 17:02 FAX 423 241 3897 OIG .2/06 WED 17:02 FAX 423 241 3897 OIG -** HQ . 001 United States Government Department of Energy Department of Energy memorandum DATE: February 9, 2006 Audit Report Number: OAS-L-06-07 REPLY TO ATTN OF; IG-32 (A050R014) SUBJECT: Audit of "The Department's Management of United States Enrichment Corporation Site Services" TO: Manager, Portsmouth/Paducah Project Office INTRODUCTTON AND OBJECTIVE The Paducah Gaseous Diffusion Plant (Paducah), located in western Kentucky, was constructed by the Department of Energy (Department) in the early 1950s to enrich uranium for use in various military and commercial applications. The Department operated the plant until the Energy Policy Act of 1992 created the United States Enrichment Corporation (USEC) as a Government-owned

382

C. Uniform Unit Pricing Regulation  

Science Conference Proceedings (OSTI)

... to permit retail stores that voluntarily provide unit pricing to present prices using various ... with requirements that specify that the unit price is to be ...

2013-10-25T23:59:59.000Z

383

United Biofuels | Open Energy Information  

Open Energy Info (EERE)

United Biofuels Jump to: navigation, search Name United Biofuels Place York, Pennsylvania Product Waste and animal fats to biofuel producer, switched to animal fats from soy in...

384

Exemplary Units Markup Language usage  

Science Conference Proceedings (OSTI)

Sample UnitsML tools and usage. ... Its usage is limited to demonstrating capabilities of plain XSLT processing with the data stored in UnitsML. ...

385

United States lubricant demand  

Science Conference Proceedings (OSTI)

This paper examines United States Lubricant Demand for Automotive and Industrial Lubricants by year from 1978 to 1992 and 1997. Projected total United States Lubricant Demand for 1988 is 2,725 million (or MM) gallons. Automotive oils are expected to account for 1,469MM gallons or (53.9%), greases 59MM gallons (or 2.2%), and Industrial oils will account for the remaining 1,197MM gallons (or 43.9%) in 1988. This proportional relationship between Automotive and Industrial is projected to remain relatively constant until 1992 and out to 1997. Projections for individual years between 1978 to 1992 and 1997 are summarized.

Solomon, L.K.; Pruitt, P.R.

1988-01-01T23:59:59.000Z

386

Solving Unit Commitment by a Unit Decommitment Method  

E-Print Network (OSTI)

demand, and operating constraints such as spinning reserve requirements, over a short time horizon of power unit i is generating in time period t pmin i pmax i : minimum maximum rated capacity of unit i rmax i : maximum reserve for unit i ripit : reserve available from unit i in time period t minrmax i

387

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. [Research Triangle Inst., Research Triangle Park, NC (United States)

1993-01-01T23:59:59.000Z

388

Ultra High p-doping Material Research for GaN Based Light Emitters  

Science Conference Proceedings (OSTI)

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

Vladimir Dmitriev

2007-06-30T23:59:59.000Z

389

Using GA-ANN algorithm to predicate coal bump energy  

Science Conference Proceedings (OSTI)

A GA-ANN network was constructed for preidcating coal bump energy, based on the 300 training samples form simulated results with PFC2D software for different coal particle stiffness. It was tested that the average relative error of fitted-output value ... Keywords: artificial neural network, coal bump, energy, genetic algorithm, predication

Yunliang Tan; Tongbin Zhao; Zhigang Zhao

2009-06-01T23:59:59.000Z

390

Properties of H, O and C in GaN  

DOE Green Energy (OSTI)

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

1996-04-01T23:59:59.000Z

391

Optimization on Seawater Desulfurization Efficiency Based on LSSVM-GA  

Science Conference Proceedings (OSTI)

Seawater flue gas Desulfurization (SFGD) was adopted in many coal-fired power plants of littoral for its low cost and high desulfurization efficiency. Operating Parameters would seriously affect SFGD efficiency, the desulfurization efficiency can be ... Keywords: SFGD, desulfurization efficiency, LSSVM, GA, optimization

Liu Ding-ping; Li Xiao-wei

2010-10-01T23:59:59.000Z

392

Development of ZnO:Ga as an Ultrafast Scintillator  

DOE Green Energy (OSTI)

We report on several methods for synthesizing the ultra-fast scintillator ZnO(Ga), and measurements of the resulting products. This material has characteristics that make it an excellent alpha detector for tagging the time and direction of individual neutrons produced by t-d and d-d neutron generators (associated particle imaging). The intensity and decay time are strongly dependent on the method used for dopant incorporation. We compare samples made by diffusion of Ga metal to samples made by solid state reaction between ZnO and Ga2O3 followed by reduction in hydrogen. The latter is much more successful and has a pure, strong near-band-edge fluorescence and an ultra-fast decay time of the x-ray-excited luminescence. The luminescence increases dramatically as the temperature is reduced to 10K. We also present results of an alternate low-temperature synthesis that produces luminescent particles with a more uniform size distribution. We examine possible mechanisms for the bright near-band-edge scintillation and favor the explanation that it is due to the recombination of Ga3+ donor electrons with ionization holes trapped on H+ ion acceptors.

Bourret-Courchesne, E.D.; Derenzo, S.E.; Weber, M.J.

2008-12-10T23:59:59.000Z

393

COOPERATIVE RESEARCH UNITS2009  

E-Print Network (OSTI)

. The CRU program expects to continue to work with cooperators in identify- ing high priority hiring actions Cooperators' Coalition (NCC) for the CRU program, which targets efforts in CRU to (i) find new ways to workCOOPERATIVE RESEARCH UNITS2009 Year In Review PROGRAM YEAR IN REVIEW In Fiscal Year (FY) 2009

394

AlGaAsSb buffer/barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability  

Science Conference Proceedings (OSTI)

Keywords: AlGaAsSb, Hall elements, InAs, Sb, buffer/barriers, deep quantum well, field effect transistors, reliability

S. Miya; S. Muramatsu; N. Kuze; K. Nagase; T. Iwabuchi; A. Ichii; M. Ozaki; I. Shibasaki

1996-03-01T23:59:59.000Z

395

Characterization and device performance of (AgCu)(InGa)Se2 absorber layers  

DOE Green Energy (OSTI)

The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only control samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and ? = 13.0%.

Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

2009-06-08T23:59:59.000Z

396

Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se2 absorber layers  

DOE Green Energy (OSTI)

(Ag,Cu)(In,Ga)Se2 thin films have been deposited by elemental co-evaporation over a wide range of compositions and their optical properties characterized by transmission and reflection measurements and by relative shift analysis of quantum efficiency device measurements. The optical bandgaps were determined by performing linear fits of (?h?)2 vs. h?, and the quantum efficiency bandgaps were determined by relative shift analysis of device curves with fixed Ga/(In+Ga) composition, but varying Ag/(Cu+Ag) composition. The determined experimental optical bandgap ranges of the Ga/(In+Ga) = 0.31, 0.52, and 0.82 groups, with Ag/(Cu+Ag) ranging from 0 to 1, were 1.19-1.45 eV, 1.32-1.56 eV, and 1.52-1.76 eV, respectively. The optical bowing parameter of the different Ga/(In+Ga) groups was also determined.

Boyle, Jonathan; Hanket, Gregory; Shafarman, William

2009-06-09T23:59:59.000Z

397

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

398

06-GA50035b.p65  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WWW.GNEP.ENERGY.GOV WWW.GNEP.ENERGY.GOV United States Department of Energy Continued next page T he Global Nuclear Energy Partnership (GNEP) is a comprehensive strategy to increase U.S. and global energy security, encourage clean development around the world, reduce the risk of nuclear proliferation, and improve the environment. A plentiful, reliable supply of energy is the cornerstone of sustained economic growth and prosperity. Nuclear power is the only proven technology that can provide abundant supplies of base load electricity reliably and without air pollution or emissions of greenhouse gasses. In The Global Nuclear Energy Partnership: Greater Energy Security in a Cleaner, Safer World order to help meet growing demand for energy at home and encourage the growth of prosperity

399

Essentials of the SI: Base & derived units  

Science Conference Proceedings (OSTI)

... Table 1. SI base units. SI base unit. Base quantity, Name, Symbol. length, meter, m. ... Table 2. Examples of SI derived units. SI derived unit. ...

400

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

ng ng United States Government Department of Energy Memorandum OFFICE OF INSPECTOR GENERAL DATE: APR 18 2003 REPLY TO ATTN OF: IG-34 (A02PR010) Audit Report No.: OAS-L-03-15 SUBJECT: Audit of the Weatherization Assistance Program TO: Director, Weatherization and Intergovernmental Program, EE-2K The purpose of this report is to inform you of the results of our audit of the Weatherization Assistance Program. INTRODUCTION AND OBJECTIVE The Weatherization Assistance Program (Program) was established to increase energy efficiency in dwellings owned or occupied by low-income persons to reduce their residential energy expenditures and improve their health and safety. Since its inception in 1976, the Program has reported that approximately 5 million dwelling units owned or occupied by low-income individuals have been weatherized.

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401

United States Government Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

OE r 1325.0 OE r 1325.0 (01.93) United States Government Department of memorandum DATE: March 23, 2006 Audit Report Number: OAS-L-06-09 REPLY TO ATTN OF: IG-32 (A060R040) SUBJECT: Audit of"The Department of Energy's Management of the Northeast Home Heating Oil Reserve" TO, Deputy Assistant Secrctary for Petroleum Reserves INTRODUCTION AND OBJECTIVE The Energy Act of 2000 authorized the Secretary of Energy to create a Northeast Home Heating Oil Reserve (Reserve). The Reserve was established as an "emergency buffer" to supplement commercial supplies should a severe supply disruption occur in the heavily heating oil-dependent northeast United States. The Reserve consists of 2 million barrels of emergency home heating oil, enough to provide Northeast consumers adequate supplies for approximately

402

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

United States Government United States Government Department of Energy Memorandum DATE: July 29, 2005 REPLY TO ATTN TO: IG-34 (A05HQ002) Audit Report No. OAS-L-05-10 SUBJECT: Agreed-Upon Procedures for Federal Payroll TO: Director, Office of Management, Budget, and Evaluation/Chief Financial Officer, ME-1 INTRODUCTION AND OBJECTIVE The Office of Management and Budget (OMB) Bulletin No. 01-02, "Audit Requirements for Federal Financial Statement," dated October 16, 2000, requires an annual audit of civilian payroll of executive departments and other Government agencies. Auditors are required to follow the agreed-upon procedures in Appendix I-1 of OMB Bulletin No. 01-02, to assess the reasonableness of life insurance, health benefits, and retirement withholdings and contributions.

403

UNITED STATES GOVERNMENT  

Office of Legacy Management (LM)

Menxmmhmz 9 Menxmmhmz 9 1 / UNITED STATES GOVERNMENT i TO : ThcFFles . mx.f I A. B. Piccct, +3lation section : DATE: .@.eti 16, 1949 SUBJECT: VISIT To HAVY OFfDHAlfCE DEPOT, EARIZ, B.J. FmmlTo ,sYmOL: DH:ARP . . : OnJuly 8,&g the uriterattendedameeting at the Navy Oxdnce Depot at Farle, Ii. J. for the purpose of advising the navy on i-adlatlon hazards involved In the dmping of contadnated AEC wastes at /?ea. " Presint were: J. Cook - Traffic & Transportation, AEC ~J.Moren- Utilifation, AEC ..J. Ccnmigl.io - Chief of Middlesex Operaticns A. PIhot -~Hadiation Section, AEC Captain Blossoin - Navy Captain hall - Navy ThefoSkndngwas agreedupcmby AFC andthe l&v. 1. 2. 3. 4. Contaminatedmaterial dnmied, I (loose in case of large contaminated units) loaded on truck&and lsonltored at'

404

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

uv /uu/u* ±.u.. J.OJ..L rAA , *. . uv /uu/u* ±.u.. J.OJ..L rAA , *. . 'A4 .. ± OO, I U444 flmI I.j102 ' -f- $I)002 EP<.1 (o-.vu) United States Government Department of Energy memorandum DATE: January 30, 2004 REP.YTO: IG-35 (A03DN039) Audit Report No.: OAS-L-04-10 SUBJECT: Audit of the Safeguards and Security Program at the Rocky Flats Environmental Technology Site To: Frazer Lockhart, Manager, Rocky Flats Field Office INTRODUCTION AND OBJECTIVE Because of the terrorist attacks against the United States on September 11, 2001, the Department of Energy (Department) instituted additional security requirements beyond those already in place for normal security operations. These "Security Conditions" requirements were established by Department Notice 473.8 (Notice). The requirements are based on

405

United States Environmental Monitoring  

Office of Legacy Management (LM)

EPA 60014-91/030 EPA 60014-91/030 Environmental Protection Systems Laboratory DOE/DP00539-063 Agency P.O. Box 93478 Las Vegas NV 891 93-3478 Research and Development Offsite Environmental Monitoring Report: 1 - 3 5 Radiation Monitorina Around * / (- P 7 1 United States ~ u c l g a r Test Areas Calendar Year 1990 This page intentionally left blank EPN60014-90 DOWDP Offsite Environmental Monitoring Report: Radiation Monitoring Around United States Nuclear Test Areas, Calendar Year 1990 Contributors: D.J. Chaloud, B.B. Dicey, D.G. Easterly, C.A. Fontana, R.W. Holloway, A.A. Mullen, V.E. Niemann, W.G. Phillips, D.D. Smith, N.R. Sunderland, D.J. Thome, and Nuclear Radiation Assessment Division Prepared for: U.S. Department of Energy under Interagency Agreement Number DE-A108-86-NV10522

406

l UNITED STATES GOVERNMENT  

Office of Legacy Management (LM)

UNITED STATES GOVERNMENT UNITED STATES GOVERNMENT lb 15 SUBJECT: THORFJM PROCURENENT PMF'N:TBU Jesse C. Johnson, Gtnager of IRaw Materials Operations3s.Office 3 R. W. Cook, Director of Production ~',LL:::+ I--- DATE: MAR ! 9 1951 The following list of suppliers of thorium and the amounts of materials procured from them by the Mew York Operations Office during calendar year 1950 is being supplied in accordance with Mr. Spelmanls telephone request of March 19. Thorium Lannett Bleachery iinde Air Products Co. Lindsey Light & Chemical Co. lliscellaneous NY0 Liscensing Division Rare Earths, Inc. Wolff-Alport Total - (kilograms) 179 38,2;2 -3 4,210 /vyeoi 4 -q- 2 : i ' \ iti 1 i 0 ;;\I:' --' I F 10 i;;;?/ \ --' L & ;:I :,- :,j( EZi 5 1 :' -I I ri _ I ' R i; .- . )- .i

407

Thermal insulated glazing unit  

SciTech Connect

An improved insulated glazing unit is provided which can attain about R5 to about R10 thermal performance at the center of the glass while having dimensions about the same as those of a conventional double glazed insulated glazing unit. An outer glazing and inner glazing are sealed to a spacer to form a gas impermeable space. One or more rigid, non-structural glazings are attached to the inside of the spacer to divide the space between the inner and outer glazings to provide insulating gaps between glazings of from about 0.20 inches to about 0.40 inches. One or more glazing surfaces facing each thermal gap are coated with a low emissivity coating. Finally, the thermal gaps are filled with a low conductance gas such as krypton gas.

Selkowitz, Stephen E. (Piedmont, CA); Arasteh, Dariush K. (Oakland, CA); Hartmann, John L. (Seattle, WA)

1991-01-01T23:59:59.000Z

408

Thermal insulated glazing unit  

DOE Patents (OSTI)

An improved insulated glazing unit is provided which can attain about R5 to about R10 thermal performance at the center of the glass while having dimensions about the same as those of a conventional double glazed insulated glazing unit. An outer glazing and inner glazing are sealed to a spacer to form a gas impermeable space. One or more rigid, non-structural glazings are attached to the inside of the spacer to divide the space between the inner and outer glazings to provide insulating gaps between glazings of from about 0.20 inches to about 0.40 inches. One or more glazing surfaces facing each thermal gap are coated with a low emissivity coating. Finally, the thermal gaps are filled with a low conductance gas such as krypton gas. 2 figs.

Selkowitz, S.E.; Arasteh, D.K.; Hartmann, J.L.

1988-04-05T23:59:59.000Z

409

Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices  

Science Conference Proceedings (OSTI)

Reverse-bias stress testing has been applied to a large set of more than 50 AlGaN/GaN high electron mobility transistors, which were fabricated using the same process but with different values of the AlN mole fraction and the AlGaN barrier-layer thickness, as well as different substrates (SiC and sapphire). Two sets of devices having different defect types and densities, related to the different growth conditions and the choice of nucleation layer, were also compared. When subjected to gate drain (or gate-to-drain and source short-circuited) reverse-bias testing, all devices presented the same time-dependent failure mode, consisting of a significant increase in the gate leakage current. This failure mechanism occurred abruptly during step-stress experiments when a certain negative gate voltage, or critical voltage, was exceeded or, during constant voltage tests, at a certain time, defined as time to breakdown. Electroluminescence (EL) microscopy was systematically used to identify localized damaged areas that induced an increase of gate reverse current. This current increase was correlated with the increase of EL intensity, and significant EL emission during tests occurred only when the critical voltage was exceeded. Focused-ion-beam milling produced cross-sectional samples suitable for electron microscopy observation at the sites of failure points previously identified by EL microscopy. In highdefectivity devices, V-defects were identified that were associated with initially high gate leakage current and corresponding to EL spots already present in untreated devices. Conversely, identification of defects induced by reverse-bias testing proved to be extremely difficult, and only nanometer-size cracks or defect chains, extending vertically from the gate edges through the AlGaN/GaN heterojunction, were found. No signs of metal/semiconductor interdiffusion or extended defective areas were visible.

Cullen, David A [ORNL; Smith, David J [Arizona State University; Passaseo, Adriana [Consiglio Nazionale delle Ricerche; Tasco, Vittorianna [Consiglio Nazionale delle Ricerche; Stocco, Antonio [Universita di Padova; Meneghini, Matteo [Universita di Padova; Meneghesso, Gaudenzio [Universita di Padova; Zanoni, Enrico [Universita di Padova

2013-01-01T23:59:59.000Z

410

Laser system preset unit  

DOE Patents (OSTI)

An electronic circuit is provided which may be used to preset a digital display unit of a Zeeman-effect layer interferometer system which derives distance measurements by comparing a reference signal to a Doppler signal generated at the output of the interferometer laser head. The circuit presets dimensional offsets in the interferometer digital display by electronically inducing a variation in either the Doppler signal or the reference signal, depending upon the direction of the offset, to achieve the desired display preset.

Goodwin, William L. (Knoxville, TN)

1977-01-01T23:59:59.000Z

411

Hoechst plans Mexican unit  

SciTech Connect

Hoechst is considering plans to build its first ethoxylates project in Mexico, Mark Sijthoff, head of surfactants and auxiliaries for Hoechst`s specialty chemical business unit, tells CW. The company expects to make a decision on the 30,000-m.t./year project by the end of the year. Sijthoff would not disclose the site or where ethylene oxide (EO) feed would be obtained. The plan may depend on results of the privatization of Petroleos Mexicanos (Pemex), which is the only producer of EO in Mexico. Hoechst is part of a consortium bidding on the privatization. Sources say the unit will be built at Quimica Hoechst`s Coatzacoalcos site, close to Pemex`s EO plants at Cangregera and Morelos. A planned EO expansion at Morelos will probably move ahead when the sell-off is completed. Sijthoff says that Hoechst is also looking at improving its US surfactants position, although the company has no plans to expand ethoxylates, as there is {open_quotes}plenty of capacity.{close_quotes} Hoechst started up a 150-million lbs/year plant at Clear Lake, TX last year, ending a tolling agreement with Union Carbide. In addition, Rhone-Poulenc recently started a unit at Marcus Hook, PA, and Condea Vista is doubling its ethoxylation capacity at Lake Charles, LA. Meanwhile, Hoechst is still considering construction of 30,000-m.t./year ethoxylation plant in India or China. A decision is expected later this year.

Wood, A.; Alperowicz, N.

1996-05-22T23:59:59.000Z

412

Mathematical structure of unit systems  

E-Print Network (OSTI)

We investigate the mathematical structure of unit systems and the relations between them. Looking over the entire set of unit systems, we can find a mathematical structure that is called preorder (or quasi-order). For some pair of unit systems, there exists a relation of preorder such that one unit system is transferable to the other unit system. The transfer (or conversion) is possible only when all of the quantities distinguishable in the latter system are always distinguishable in the former system. By utilizing this structure, we can systematically compare the representations in different unit systems. Especially, the equivalence class of unit systems (EUS) plays an important role because the representations of physical quantities and equations are of the same form in unit systems belonging to an EUS. The dimension of quantities is uniquely defined in each EUS. The EUS's form a partially ordered set. Using these mathematical structures, unit systems and EUS's are systematically classified and organized as a hierarchical tree.

Masao Kitano

2013-05-04T23:59:59.000Z

413

GaSb substrates with extended IR wavelength for advanced space based applications  

SciTech Connect

GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

2009-05-01T23:59:59.000Z

414

Two-color picosecond experiments on anti-Stokes photoluminescence in GaAs/AlGaAs asymmetric double quantum wells  

E-Print Network (OSTI)

quantum wells S. C. Hohng and D. S. Kima) Department of Physics and Condensed Matter Research Institute in GaAs/AlGaAs asymmetric double quantum wells. Direct evidence for forbidden absorption is shown heterojunctions and asymmetric double quan- tum wells was found and its origin is still being hotly de- bated

Hohng, Sung Chul

415

Light output enhancement of InGaN/GaN light-emitting diodes with contrasting indium tin-oxide nanopatterned structures  

Science Conference Proceedings (OSTI)

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square ...

Sang Hyun Jung, Keun Man Song, Young Su Choi, Hyeong-Ho Park, Hyun-Beom Shin, Ho Kwan Kang, Jaejin Lee

2013-01-01T23:59:59.000Z

416

Optically pumped InxGa???xN/InyGa???yN multiple quantum well vertical cavity surface emitting laser operating at room temperature.  

E-Print Network (OSTI)

Room temperature vertical cavity lasing at the wavelength of 433nm has been successfully realized in InxGa???xN/InyGa???yN multiple quantum well without Bragg mirrors under photo-excitation. At high excitation intensity, ...

Chen, Zhen

417

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth  

Science Conference Proceedings (OSTI)

Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f{sub t} and f{sub max} in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 OMEGA mum to a GaN 2DEG.

Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K. [Department of ECE, University of California, Santa Barbara, California 93106 (United States) and Department of Materials, University of California, Santa Barbara, California 93106 (United States)

2010-04-05T23:59:59.000Z

418

GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as the gate dielectric. The MOS gate reverse breakdown voltage was > 35V which was significantly improved from 17V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V{sub ds} = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, f{sub {tau}}, and maximum frequency of oscillation, f{sub max} of 3.1 and 10.3 GHz, respectively, were measured at V{sub ds} = 25 V and V{sub gs} = {minus}20 V.

Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Schurman, M.J.

1999-03-02T23:59:59.000Z

419

Dynamic Model of Hydrogen in GaN  

NLE Websites -- All DOE Office Websites (Extended Search)

Dynamic Model of Hydrogen in GaN by S. M. Myers and A. F. Wright Motivation-Hydrogen is incorporated into p-type GaN during MOCVD growth, producing highly stable passivation of the Mg acceptors. Complete acceptor activation by thermal H release requires temperatures that threaten material integrity, prompting compromises in device processing. At lower temperatures, forward bias of p-n junctions or electron-beam irradiation produces a metastable, reversible activation without H release. To understand and control such effects, we are developing a mathematical model of H behavior wherein state energies from density-functional theory are employed in diffusion-reaction equations. Previously, we used the greatly simplifying assumptions of local equilibrium among states

420

A GaAs transceiver chip for optical data transmission  

SciTech Connect

The present article describes a transceiver VLSI chip for optical data transmission, at 1 Gbit/s (1.4 Gbit/s in selected production), made in GaAs technology. The transceiver makes the parallel-to-serial and serial-to-parallel conversion as well as the encoding and decoding of 32 bit data words. The circuit operates in a completely asynchronous mode, allowing the possibility of switching on-off the transmission in few nsec and of using the transceiver not only in point-to-point topologies, but also in flooding topologies (i.e. star connections). The radiation hardness and the relatively low power consumption, respect to TTL, of the GaAs, extend the use of the chip to a large number of applications in present and future high energy physics experimental apparatus.

Mirabelli, G.; Petrolo, E.; Valente, E. (Ist. Nazionale di Fisica Nucleare, Roma (Italy)); Cardarelli, R.; Santonico, R. (Sezione di Roma 2 and Univ. di Roma (Italy). Ist. Nazionale di Fisica Nucleare); Ferrer, M.L. (Lab. Nazionali di Frascati (Italy). Ist. Nazionale di Fisica Nucleare)

1993-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Method of plasma etching Ga-based compound semiconductors  

SciTech Connect

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Qiu, Weibin; Goddard, Lynford L.

2012-12-25T23:59:59.000Z

422

AlGaAs diode pumped tunable chromium lasers  

DOE Patents (OSTI)

An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF.sub.6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF.sub.6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.

Krupke, William F. (Pleasanton, CA); Payne, Stephen A. (Castro Valley, CA)

1992-01-01T23:59:59.000Z

423

CsBr/GaN Heterojunction Photoelectron Source  

Science Conference Proceedings (OSTI)

Experimental results on a new CsBr/GaN heterojunction photocathode structure are presented. The results indicate a fourfold improvement in photoyield relative to CsBr/Cr photocathodes. A model is presented based on intraband states in CsBr and electron injection from the GaN (with 1% addition of indium) substrate to explain the observed photoyield enhancement. The photocathode lifetime at high current density (>40 A/cm{sup 2}) is limited by laser heating of the small illuminated area. Calculations are presented for sapphire and diamond substrates, indicating a factor of 20 reduction in temperature for the latter. The results are encouraging for the realization of a high photoyield photocathode operating at high current density with long lifetime.

Maldonado, J.R.; /Stanford U., Elect. Eng. Dept.; Liu, Z.; Sun, Y.; /SLAC, SSRL; Schuetter, S.; /Wisconsin U., Madison; Pianetta, P.; /SLAC, SSRL; Pease, R.F.W.; /Stanford U., Elect. Eng. Dept.

2009-04-30T23:59:59.000Z

424

Method of plasma etching GA-based compound semiconductors  

DOE Patents (OSTI)

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Qiu, Weibin; Goddard, Lynford L.

2013-01-01T23:59:59.000Z

425

Links to on-line unit conversions  

Science Conference Proceedings (OSTI)

... Basic physical quantities. General unit, currency, and temperature conversion. ... Many conversions, including unusual and ancient units. ...

426

Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.  

SciTech Connect

GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.

Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

2005-12-01T23:59:59.000Z

427

X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure  

SciTech Connect

High-resolution X-ray diffraction analysis and scanning confocal Raman spectroscopy are used to study the spatial distribution of strains in the In{sub x}Ga{sub 1-x}N/GaN layers and structural quality of these layers in a multilayered light-emitting diode structure produced by metal-organic chemical vapor deposition onto (0001)-oriented sapphire substrates. It is shown that elastic strains almost completely relax at the heterointerface between the thick GaN buffer layer and In{sub x}Ga{sub 1-x}N/GaN buffer superlattice. It is established that the GaN layers in the superlattice are in a stretched state, whereas the alloy layers are in a compressed state. In magnitude, the stretching strains in the GaN layers are lower than the compressive strains in the InGaN layers. It is shown that, as compared to the buffer layers, the layers of the superlattice contain a smaller number of dislocations and the distribution of dislocations is more randomly disordered. In micro-Raman studies on scanning through the thickness of the multilayered structure, direct evidence is obtained for the asymmetric gradient distributions of strains and crystal imperfections of the epitaxial nitride layers along the direction of growth. It is shown that the emission intensity of the In{sub x}Ga{sub 1-x}N quantum well is considerably (more than 30 times) higher than the emission intensity of the GaN barrier layers, suggesting the high efficiency of trapping of charge carriers by the quantum well.

Strelchuk, V. V., E-mail: Strelch@isp.kiev.ua; Kladko, V. P.; Avramenko, E. A.; Kolomys, O. F.; Safryuk, N. V.; Konakova, R. V. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine); Yavich, B. S., E-mail: byavich@soptel.ru [ZAO Svetlana-Optoelectronics (Russian Federation); Valakh, M. Ya.; Machulin, V. F.; Belyaev, A. E. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2010-09-15T23:59:59.000Z

428

UV-Photoassisted Etching of GaN in KOH  

SciTech Connect

The etch rate of GaN under W-assisted photoelectrochemical conditions in KOH solutions is found to be a strong function of illumination intensity, solution molarity, sample bias and material doping level. At low e-h pair generation rates, grain boundaries are selectively etched, while at higher illumination intensities etch rates for unintentionally doped (n - 3x 10^12Gcm-3) GaN are 2 1000 .min-l. The etching is diffusion limited under our conditions with an activation energy of - 0.8kCal.mol-1. The etched surfaces are rough, but retain their stoichiometry. PEC etching is found to selectively reveal grain boundaries in GaN under low light illumination conditions. At high lamp powers the rates increase with sample temperature and the application of bias to the PEC cell, while they go through a maximum with KOH solution molarity. The etching is diffusion-limited, producing rough surface morphologies that are suitable in a limited number of device fabrication steps. The surfaces however appear to remain relatively close to their stoichiometric composition.

Abernathy, C.R.; Auh, K.H.; Cho, H.; Donovan, S.M.; Han, J.; Lambers, E.S.; Pearton, S.J.; Ren F.; Shul, R.J.

1998-11-12T23:59:59.000Z

429

Comparative study of GaN growth process by MOVPE  

SciTech Connect

A comparative study of two different MOVPE reactors used for GaN growth is presented. Computational fluid dynamics (CFD) was used to determine common gas phase and fluid flow behaviors within these reactors. This paper focuses on the common thermal fluid features of these two MOVPE reactors with different geometries and operating pressures that can grow device-quality GaN-based materials. The study clearly shows that several growth conditions must be achieved in order to grow high quality GaN materials. The high-temperature gas flow zone must be limited to a very thin flow sheet above the susceptor, while the bulk gas phase temperature must be very low to prevent extensive pre-deposition reactions. These conditions lead to higher growth rates and improved material quality. A certain range of gas flow velocity inside the high-temperature gas flow zone is also required in order to minimize the residence time and improve the growth uniformity. These conditions can be achieved by the use of either a novel reactor structure such as a two-flow approach or by specific flow conditions. The quantitative ranges of flow velocities, gas phase temperature, and residence time required in these reactors to achieve high quality material and uniform growth are given.

Sun, J.; Redwing, J.M.; Kuech, T.F.

1999-07-01T23:59:59.000Z

430

Low-temperature magnetization of (Ga,Mn) As semiconductors  

E-Print Network (OSTI)

We report on a comprehensive study of the ferromagnetic moment per Mn atom in (Ga,Mn)As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments antiferromagnetically coupled to valence band hole spins. The validity of the effective model over the range of doping studied is assessed by comparing with microscopic tight-binding/coherent-potential approximation calculations. Using the virtual crystal k center dot p model for hole states, we evaluate the zero-temperature mean-field contributions to the magnetization from the hole kinetic and exchange energies, and magnetization suppression due to quantum fluctuations of Mn moment orientations around their mean-field ground state values. Experimental low-temperature ferromagnetic moments per Mn are obtained by superconducting quantum interference device and x-ray magnetic circular dichroism measurements in a series of (Ga,Mn)As semiconductors with nominal Mn doping ranging from similar to 2 to 8%. Hall measurements in as-grown and annealed samples are used to estimate the number of uncompensated substitutional Mn moments. Based on our comparison between experiment and theory we conclude that all these Mn moments in high quality (Ga,Mn)As materials have nearly parallel ground state alignment.

Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

2006-01-01T23:59:59.000Z

431

Substrate misorientation effects on epitaxial GaInAsSb  

DOE Green Energy (OSTI)

The effect of substrate misorientation on the growth of GaInAsSb was studied for epilayers grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy. The substrates were (100) misoriented 2 or 6{degree} toward (110), (111)A, or (111)B. The surface is mirror-like and featureless for layers grown with a 6{degree} toward (111)B misorientation, while, a slight texture was observed for layers grown on all other misorientations. The optical quality of layers, as determined by the full width at half-maximum of photoluminescence spectra measured at 4K, is significantly better for layers grown on substrates with a 6{degree} toward (111)B misorientation. The incorporation of Zn as a p-type dopant in GaInAsSb is about 1.5 times more efficient on substrates with 6{degree} toward (111)B misorientation compared to 2{degree} toward (110) misorientation. The external quantum efficiency of thermophotovoltaic devices is not, however, significantly affected by substrate misorientation.

Wang, C.A.; Choi, H.K.; Oakley, D.C. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1997-12-01T23:59:59.000Z

432

" Million U.S. Housing Units"  

U.S. Energy Information Administration (EIA) Indexed Site

3 Lighting Usage Indicators by Type of Housing Unit, 2005" " Million U.S. Housing Units" ,,"Type of Housing Unit" ,"Housing Units (millions)","Single-Family Units",,"Apartments in...

433

Million U.S. Housing Units Total...............................  

U.S. Energy Information Administration (EIA) Indexed Site

Attached 2 to 4 Units Table HC2.12 Home Electronics Usage Indicators by Type of Housing Unit, 2005 5 or More Units Mobile Homes Type of Housing Unit Housing Units (millions)...

434

Desferal (DFO) induced Ga-67 washout from normal tissue, tumor and abscess in experimental animals  

Science Conference Proceedings (OSTI)

In the experimental animal, desferal (DFO) given intravenously washes out Ga-67 from all tissues. This effect is not uniform: blood activity is reduced very markedly, while liver activity is less affected. Maximal effect of DFO occurs if given close to the Ga-67 injection. When the time interval between the two is increased, the absolute amount of Ga-67 excreted in the urine in excess of the spontaneous excretion is reduced. Administration of DFO does not effect Ga-67 gastrointestinal excretion. In three animal tumor models (EMT-6 sarcoma in Balb/c mice, spontaneous adenocarcinoma in mice, and spontaneous adenocarcinoma in the rabbit) and in sterile abscess-bearing rats, the administration of DFO 24 hrs after Ga-67-citrate improves significantly the target-to-nontarget ratio. Animals given 50 mg/kg DFO I.V. after Ga-67 citrate showed a significant reduction in the whole-body activity as seen in a one-week follow up.

Oster, Z.H.; Som, P.; Atkins, H.L.; Brill, A.B.

1980-01-01T23:59:59.000Z

435

Low energy electron beam induced vacancy activation in GaN  

Science Conference Proceedings (OSTI)

Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5-20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive V{sub Ga}-H{sub n} complexes that can be activated by H removal during low energy electron irradiation.

Nykaenen, H.; Suihkonen, S.; Sopanen, M. [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto (Finland); Kilanski, L. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto (Finland); Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/56, 02-668 Warsaw (Poland); Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto (Finland)

2012-03-19T23:59:59.000Z

436

Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology  

DOE Green Energy (OSTI)

This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

Vernon, S.M. (Spire Corp., Bedford, MA (United States))

1993-04-01T23:59:59.000Z

437

Current Name Academic Unit Request  

E-Print Network (OSTI)

Current Name Academic Unit Request Department/College/School/Institute/Center Names: New or Changes This form is to be used to request new academic units (departments, colleges, schools, institutes, or centers) or to request changes to existing academic units. Complete the following and submit

Hart, Gus

438

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas  

SciTech Connect

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2 Multiplication-Sign 10{sup 11} cm{sup -2}) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).

Mak, W. Y.; Sfigakis, F.; Beere, H. E.; Farrer, I.; Griffiths, J. P.; Jones, G. A. C.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom)] [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom); Das Gupta, K. [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom) [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom); Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India); Klochan, O.; Hamilton, A. R. [School of Physics, University of New South Wales, Sydney (Australia)] [School of Physics, University of New South Wales, Sydney (Australia)

2013-03-11T23:59:59.000Z

439

Terrestrial Concentrator PV Modules Based on GaInP/GaAs/Ge TJ Cells and Minilens Panels  

SciTech Connect

This paper is a description of research activity in the field of cost-effective modules realizing the concept of very high solar concentration with small-aperture area Fresnel lenses and multijunction III-V cells. Structural simplicity and 'all-glass' design are the guiding principles of the corresponding development. The advanced concentrator modules are made with silicone Fresnel lens panels (from 8 up to 144 lenses, each lens is 4 times 4 cm{sup 2} in aperture area) with composite structure. GaInP/GaAs/Ge triple-junction cells with average efficiencies of 31.1 and 34.7% at 1000 suns were used for the modules. Conversion efficiency as high as 26.3% has been measured indoors in a test module using a newly developed large-area solar simulator.

Rumyantsev, V. D.; Sadchikov, N. A.; Chalov, A. E.; Ionova, E. A.; Friedman, D. J.; Glenn, G.

2006-01-01T23:59:59.000Z

440

Quaternary Bismide Alloy ByGa1-yAs1-xBix Lattice Matched to GaAs  

DOE Green Energy (OSTI)

We report on the lattice matched quaternary alloy, B{sub y}Ga{sub 1-y}As{sub 1-x}Bi{sub x} grown by molecular beam epitaxy at conditions conducive to bismuth incorporation. Incorporating a smaller atom (boron) along with the larger atom (bismuth) allows for a reduction of the epi-layer strain and lattice matching to GaAs for compositions of Bi:B{approx_equal}1.3:1. The addition of boron flux does not significantly affect the bismuth incorporation and no change in the band gap energy is observed with increasing boron content. However, excess, non-substitutional boron is incorporated which leads to an increase in hole density, as well as an increase in the density of shallow in-gap states as observed by the loss of localization of photo-excited excitons.

Deaton, D. A.; Ptak, A. J.; Alberi, K.; Mascarenhas, A.

2012-07-15T23:59:59.000Z

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation dose on dc characteristics and the reliability of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 109 to 2 1014 cm-2. For the dc characteristics, there was only minimal degradation of saturation drain current (IDSS), transconductance (gm), electron mobility and sheet carrier concentration at doses below 2 1013 cm-2, while the reduction of these parameters were 15%, 9%, 41% and 16.6%, respectively, at a dose of 2 1014 cm-2. At this same dose condition, increases of 37% in drain breakdown voltage (VBR) and of 45% in critical voltage (Vcri) were observed. The improvement of device reliability was attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose.

Liu, L. [University of Florida, Gainesville; Cuervo, C.V. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

442

Harmonic Responses in 2DEG AlGaAs/GaAs HEMT Devices Due to Plasma Wave Interaction  

Science Conference Proceedings (OSTI)

Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, omega{sub p}, lie in the terahertz range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short-channel High-Electron-Mobility Transistor (HEMT) and the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results.

Hashim, A. M.; Alias, Q. I. [Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Kasai, S.; Hasegawa, H. [Research Center for Integrated Quantum Electronics, Hokkaido University North 12 West 8, Sapporo 060-8628 (Japan)

2010-03-11T23:59:59.000Z

443

Subpicosecond spin relaxation in GaAsSb multiple quantum wells K. C. Hall,a)  

E-Print Network (OSTI)

Subpicosecond spin relaxation in GaAsSb multiple quantum wells K. C. Hall,a) S. W. Leonard, and H quantum wells are measured at 295 K using time-resolved circular dichroism induced by 1.5 m, 100 fs pulses times shorter than those in InGaAs and InGaAsP wells with similar band gaps. The shorter relaxation

Van Driel, Henry M.

444

Verti Jack Pumping Unit evaluation  

Science Conference Proceedings (OSTI)

The Verti Jack Pumping Unit was tested primarily to establish the energy comsumption efficiency of the unit as compared with that of conventional pumping unit. Before the unit was field tested, extensive static testing was performed to determine the effect of the counterbalance system throughout the operational cycle. The field test included comparing the performance of the Verti Jack Unit and conventional pump jacks - a Bethlehem 16 and Cabot 25 pumping unit. The Verti Jack unit was operated at four different pumping conditions. The Verti Jack unit peformed satisfactorily during the testing. Only minor problems that could not be attributed to the design or operation of the unit were encountered. Changing the stroke length was difficult in the field, but such operational problems were expected in operating the first phototype and can be corrected on future models. During the higher pumping rate tests of the Verti Jack unit, the well ceased to deliver fluid quantities at rates adequate to the pumping rate. These data are shown in table 8. Therefore, evaluation data are based on theoretical pump performance and are presented in table 9. The data show that the Verti Jack is more efficient than the conventional units tested. The most direct comparison was the Verti Jack test at 36-inch stroke and 12 1/2 strokes per minute versus the Cabot unit at 37-inch stroke and 12 strokes per minute. In the comparison the Verti Jack operated about 24 percent more efficiently than the Cabot unit. Comparing the summation of all Verti Jack tests with that of all conventional unit tests, the Verti Jack operated about 15 percent more efficiently. Compared to the Cabot unit only, the Verti Jack was about 17 percent more energy efficient. 13 figs., 12 tabs.

Porter, R.; Spence, K.

1985-11-01T23:59:59.000Z

445

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors  

SciTech Connect

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-03-10T23:59:59.000Z

446

Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN  

DOE Green Energy (OSTI)

Etch rates up to 7,000 {angstrom}/min. for GaN are obtained in Cl{sub 2}/H{sub 2}/Ar or BCl{sub 3}/Ar ECR discharges at 1--3mTorr and moderate dc biases. Typical rates with HI/H{sub 2} are about a factor of three lower under the same conditions, while CH{sub 4}/H{sub 2} produces maximum rates of only {approximately}2,000 {angstrom}/min. The role of additives such as SF{sub 6}, N{sub 2}, H{sub 2} or Ar to the basic chlorine, bromine, iodine or methane-hydrogen plasma chemistries are discussed. Their effect can be either chemical (in forming volatile products with N) or physical (in breaking bonds or enhancing desorption of the etch products). The nitrides differ from conventional III-V`s in that bond-breaking to allow formation of the etch products is a critical factor. Threshold ion energies for the onset of etching of GaN, InGaN and InAlN are {ge} 75 eV.

Pearton, S.J.; Vartuli, C.B.; Lee, J.W.; Donovan, S.M.; MacKenzie, J.D.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States); Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); McLane, G.F. [Army Research Lab., Fort Monmouth, NJ (United States); Ren, F. [AT and T Bell Labs., Murray Hill, NJ (United States)

1996-04-01T23:59:59.000Z

447

Reliability of GaN HEMTs: Electrical and Radiation-induced Failure ...  

Science Conference Proceedings (OSTI)

Symposium, Advanced Materials for Power Electronics, Power Conditioning, and Power Conversion II. Presentation Title, Reliability of GaN HEMTs: Electrical...

448

Thermoelectric Study of InGaN-Based Materials for Thermal Energy ...  

Science Conference Proceedings (OSTI)

Presentation Title, Thermoelectric Study of InGaN-Based Materials for Thermal ... Structural and Thermal Stability Properties of Cellulose Nanocomposites with...

449

X-Ray Studies of GaN Film Grown on Si Using Electrochemical Deposition Techniques  

Science Conference Proceedings (OSTI)

This paper reports on the X-ray studies of GaN thin films deposited on Si (111) substrate at different current density using electrochemical deposition technique. The structural properties of GaN films were studied by X-ray diffraction (XRD). XRD analysis showed that hexagonal wurtzite and cubic zinc blende GaN phases were both deposited on Si (111). The lattice constants, the average size of h-GaN crystals and the in-plane (along a-axis) and out of plane (along c-axis) strains were calculated from XRD analysis.

Al-Heuseen, K.; Hashim, M. R. [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia)

2011-03-30T23:59:59.000Z

450

M4, Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers  

Science Conference Proceedings (OSTI)

On-axis reciprocal space mapping of the graded AlGaN showed tilt at each interface associated ..... New Concepts and Materials for Solar Power Conversion

451

Solidification and Microstructure Evaluation of the Ni-Ga and Co-Ni ...  

Science Conference Proceedings (OSTI)

Ni-Ga binary system is thus one of the basic binary system which forms the dominated ? ... The Effects of Natural and Marangoni Convection on the Resultant...

452

Structure and Composition Peculiarities of GaN/AlN Multiple ...  

Science Conference Proceedings (OSTI)

Thickness of AlN and GaN layers in MQWs (multiple quantum wells) were ... InAs Quantum Dots by Ballistic Electron Emission Microscopy and Spectroscopy.

453

A Paleoenvironmental Study of the 2.7 GA Tumbiana Formation, Fortescue Basin, Western Australia.  

E-Print Network (OSTI)

??A paleoecological and paleoenvironmental study was conducted on the 2.7 Ga Meentheena Member of the Tumbiana Formation, Fortescue Basin, Western Australia. It involved the integrated (more)

Coffey, Jessica

2011-01-01T23:59:59.000Z

454

Cu-Ga-Se Thin Films Prepared by a Combination of Electrodeposition and Evaporation Techniques  

Science Conference Proceedings (OSTI)

Cu-Ga-Se thin films were prepared using a combination of electrodeposition and evaporation techniques. A Cu-Se/Mo/glass precursor thin film was first prepared by galvanostatic electrodeposition. On top of this film three different thicknesses of Ga were deposited by evaporation. The Cu-Ga-Se thin films were formed by annealing the Ga/Cu-Se/Mo/glass thin film configuration in a tubular chamber with Se powder, at different temperatures. Thin films were characterized by X-ray diffraction (XRD), photocurrent spectroscopy (PS), inductively coupled plasma (ICP) analysis, and scanning electron microscopy (SEM). The detailed analysis from X-ray reveals that after annealing at 550 C the CuGaSe{sub 2} phase is formed when the thickness of Ga is 0.25 {mu}m, however at 0.5 {mu}m and 1.0 {mu}m Ga the formation of CuGa{sub 3}Se{sub 5} and CuGa{sub 5}Se{sub 8} phases is observed respectively. Band gap values were obtained using photocurrent spectroscopy.

Fernandez, A. M.; Turner, J. A.

2012-04-01T23:59:59.000Z

455

Disentangling the Mn moments on different sublattices in the half-metallic ferrimagnet Mn3?xCoxGa  

SciTech Connect

Ferrimagnetic Mn{sub 3-x}Co{sub x}Ga compounds have been investigated by magnetic circular dichroism in x-ray absorption (XMCD). Compounds with x > 0.5 crystallize in the CuHg{sub 2}Ti structure. A tetragonal distortion of the cubic structure occurs for x {le} 0.5. For the cubic phase, magnetometry reveals a linearly increasing magnetization of 2x Bohr magnetons per formula unit obeying the generalized Slater-Pauling rule. XMCD confirms the ferrimagnetic character with Mn atoms occupying two different sublattices with antiparallel spin orientation and different degrees of spin localization and identifies the region 0.6 < x {le} 0.8 as most promising for a high spin polarization at the Fermi level. Individual Mn moments on inequivalent sites are compared to theoretical predictions.

Klaer, P.; Jenkins, C.A.; Alijani, V.; Winterlik, J.; Balke, B.; Felser, C.; Elmers, H.J.

2011-05-03T23:59:59.000Z

456

,. United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

i. 001 i. 001 DOE F 1325.8 (8-89) EFG (07-90) ,. United States Government Department of Energy memorandum DATE: September 11, 2003 REPLYTO: IG-34 (A03NE045) Audit Report No.: OAS-L-03-20 SUBJECT: Audit of Procurement Administration at the Oak Ridge National Laboratory TO: Director, Office of Management, Budget and Evaluation/Chief Financial Officer, ME-1 The purpose of this report is to inform you of the results of our survey of procurement administration at the Oak Ridge National Laboratory (Laboratory). This review was initiated in May 2003 and fieldwork was conducted through August 2003. Our review methodology is described in an attachment to this report. INTRODUCTION AND OBJECTIVE In Fiscal Year (FY) 2002, the Department of Energy's (Department) management contractors procured approximately $6.4 billion worth of goods and services from

457

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

31/07 THU 18:20 FAX 865 241 3897 OIG --- HQ 31/07 THU 18:20 FAX 865 241 3897 OIG --- HQ 00 DOE F 1325.8 (08&93) United States Government Department of Energy memorandum DATE: May 31, 2007 Audit Report Number: OAS-L-07-13 REPLY TO ATTN OF: IG-32 (A07RL048) SUBJECT: Audit of Safety Allegations Related to the Waste Treatment Plant at the Hanford Site TO: Manager, Office of River Protection INTRODUCTION AND OBJECTIVE The Department of Energy's (Department) Hanford Site is responsible for treating and preparing 53 million gallons of radioactive and chemically hazardous waste for disposal. Bechtel National, Inc. (Bechtel) is designing, building and commissioning the Waste Treatment Plant (Plant), a category II nuclear facility, which is comprised of a complex of treatment facilities to vitrify and immobilize radioactive waste into a

458

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

OEF 1325.8 OEF 1325.8 (U8-93) United States Government Department of Energy memorandum DATE: April 11, 2007 Audit Report Number: OAS-L-07-I1 REPLY TO ATTN OF: IG-32 (A07DN056) SUSJECT: Audit of the Department of Energy's Community and Regulatory Support Funding at the Richland Operations Office TO: Manager, Richland Operations Office INTRODUCTION AND OBJECTIVE The Department of Energy's (Department) Office of Environmental Management provided $60.1 million in Community and Regulatory Support funding in Fiscal Year (FY) 2005 to a number of Departm- nt sites. The funding is intended to be used for activities indirectly related to nuclear and hazardous waste cleanup, such as agreements with state regulatory agencies and transportation departments. During FY 2005, the Department's Richland

459

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

a . a . r-z . "*& ., . .. uoi UA o. --.- flI gj UUX DOE F 1325.8 (08.93) United States Government Department of Ene memorandum DATE: August 19, 2004 Audit Report Number: OAS-L-04-18 REPLY TO ATTN OF: IG-36 (A03IF009) SUBJECT: Audit of the "Revised Pit 9 Cleanup Project at the Idaho National Engineering and Environmental Laboratory" TO: Paul Golan, Acting Assistant Secretary, Office of Environmental Management INTRODUCTION AND OBJECTIVE The Idaho National Engineering and Environmental Laboratory's (iNEEL) subsurface disposal area was established in 1952 for disposal of solid radioactive waste and now encompasses an area of approximately 88 acres. Wastes from the INEEL and other Department of Energy (Department) sites, rmost notably Rocky Flats, were buried in

460

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

vu & . vu & . ,I / v a L U ; .8 " ',X v &..'*. "o uu V"x Ijo tf J ,*- , , i 4 w i tiJ U U 1 OEF S.a 135 (0B93) United States Government - Department of Energy memorandum DATE: February 27, 2007 REPLY TO Audit Repor Number: OAS-L-07-08 ATTN OF: IG-32 (A06ID015) SUBJECT: Audit of the "Design of the Engineered Barrier System at the Yucca Mountain Site" TO: Principal Deputy Director, Office of Civilian Radioactive Waste Management INTRODUCTION AND OBJECTrVE In accordance with the Nuclear Waste Policy Act of 1982, the Department of Energy's (Department) Office of Civilian Radioactive Waste Management (OCRWM) is responsible for designing, licensing, constructing, and operating a repository, known as Yucca Mountain, for the permanent disposal of spent nuclear fuel and high-level -

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461

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

F 1325.8 F 1325.8 (08-93) United States Government Department of Energy memorandum DATE: August 13, 2007 . . Audit Report Number: OAS-L-07-18 REPLY TO ATTN OF: IG-32 (A07PR061) SUBJECT: Audit of Executive Compensation at Brookhaven National Laboratory TO: Manager, Brookhaven Site Office INTRODUCTION AND OBJECTIVE As part of a Department of Energy-wide audit of executive compensation, we reviewed executive compensation at the Office of Science's Brookhaven National La --- _ .r . . tc. av .... n . Ou audit covered executive cuupoci'A ;is in curred and claimed for Fiscal Years 2003, 2004, and 2005. Brookhaven Science Associates, LLC, operated Brookhaven under Department of Energy (Department) contract number DE-AC02-98CH10886. The amount of executive compensation that can be reimbursed to Department

462

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

')/06 MON 14:28 FAX 423 241 3897 OIG ')/06 MON 14:28 FAX 423 241 3897 OIG --- HQ 1o001 ,O " F 1325.8 (08-93) United States Government Department of Energy memorandum DATE: April 10, 2006 Audit Report No.: OAS-L-06-11 REPLY TO ATTN OF: IG-32 (A05ID043) SUBJECT: Audit of "Contract Transition Activities at the Idaho Operations Office" TO: Manager, Idaho Operations Office INTRODUCTION AND OBJECTIVE The Department of Energy's Idaho Operations Office has ongoing missions focused primarily in the areas of nuclear energy and environmental cleanup. From October 1, 1999 to February 1, 2005, Bechtel BWXT Idaho, LLC (Bechtel) managed facility operations for both of these missions. In Fiscal Year 2005, two separate contracts began in order to add focus and clarity to each respective mission. First, the Idaho National

463

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

-93) -93) United States Government Department of Energy memorandum DATE: July 12, 2007 Audit Report Number: OAS-L-07-15 REPLY TO ATnN OF: IG-32 (A07ID055) SUBJECr: Audit of the Idaho National Laboratory Facility Footprint Reduction TO: Manager, Idaho Operations Office INTRODUCTION AND OBJECTTVE On February 1, 2005, Battelle Energy Alliance, LLC (BEA) assumed responsibility for managing and operating the Idaho National Laboratory (INL) for the Department of Energy (Department) under a new 10 year contract. ThI m.ion for ,the L s to nntance the Nation's energy security by becoming the preeminent, internationally recognized nuclear energy research, development, and demonstration laboratory.. To accomplish this mission, BEA proposed aggressive infrastructure initiatives

464

United States Government Departmen  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7/05 TUE 07:58 FAX 423 241 3897 OIG -** HQ @]002 7/05 TUE 07:58 FAX 423 241 3897 OIG -** HQ @]002 DOE F 1325.8 (08-93) United States Government Departmen of Energy memorandum DATE: December 20, 2005 Audit Report Number: OAS-L-06-03 REPLY TO A1TN OF; IG-36 (A05SR025) SUBJECT: Audit of "Defense Waste Processing Facility Operations at the Savannah River Site" TO: Jeffrey M. Allison, Manager, Savannah River Operations Office INTRODUCTION AND OBJECTIVE The Department of Energy's (Department) Savannah River Site stores approximately 36 million gallons of liquid, high-level radioactive waste in 49 underground waste storage tanks. The contents of the waste tanks are broadly characterized as either "sludge waste" or "salt waste". Sludge waste is insoluble and settles to the bottom of a waste tank, beneath a layer of liquid supernate. Salt

465

* United States Government  

Office of Legacy Management (LM)

-- -- DE;$r,e /q f-j * I3 - I * United States Government memorandum MAY 21 I991 DATE: REPLY TO Al-fN OF: 4ih55YhL Department of Energy JT:,i 5, f&A 0 ' - j4.~, ' -/ jl.a' \ A t -3 __..-_-. EM-421 SUBJECT: Elimination of the American Potash and Chemical Site The File TO: I have reviewed the attached site summary and elimination recommendation for the American Potash and Chemical Company Site in West Hanover, Massachusetts. I have determined that there is little likelihood of radioactive contamination at this site. Based on the above, the American Potash and Chemical Company site is hereby eliminated from further consideration under the Formerly Utilized Sites Remedial Action Program. W. Alexander Williams, PhD Designation and Certification Manager

466

United States Goveinment  

Office of Legacy Management (LM)

,325.B ,325.B jO8.93) United States Goveinment ~~~rntir-andu~rvi Depr?rtnient of Energy \L, IO' " 1' !ATE:' MAY i o 1995 ,' Kzb9. ":cz$ EM-421 (W.,A. Williams, 301-903-8149) SUBJECT: Records for the West Chicago Site .The File TO: After review.of the available r&rds concerning the former 'Lindsay Light and Chemical.Corhpany site in West Chicago, Illinois. I have determined that it is not necessary to transmit Department of Energy (DOE) records to the municipa,llty to inform public officials of the activities at this ~ site. This site has been licgnsed by the Nuclear Regulatory Commission (NRC) for many.years, and the nature of the. rare'earth and thorium production at the site, are well known. Remediation of this faci'lity ii~ being addressed by the current owner, 'the NRC, the U.S; Environmental

467

; United States Government  

Office of Legacy Management (LM)

Don F 1328.8 Don F 1328.8 . . .449J ' Em wm ; United States Government , % - memorandum L c*m Al.)G 2 9 a34 yz;; EM-421 (If. A. Willlams, 427-1719) lq,iMAL Department of Energy m5 MA, \i& SUBJECT: Elimination of the Sites from the Formerly Utllized Sites Remedial A&Ion Prograa ' a The File In 1990, with the assistance of Hr. Doug Tonkay and Ms. Htchelle L&is, I reviewed a number of sites that had fomerly provided goods and/or services to the Fernald faclllty as subcontractors. For 24 of.these sites, recoarwndations were ude to eliainate thm from further consideratton under Formerly Utilized Sites Reaedial Actlon Progrm (FUSRAP). In each case, I made or revlewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more

468

UNITED STATES GOVERNMENT  

Office of Legacy Management (LM)

'.... '|le , * f C. '.... '|le , * f C. Office Memorandum · UNITED STATES GOVERNMENT .-- J TO ' Leo Graup, Chief, DATE: September 29, 1958 Property Management Branch rFi0 : M. S. Weinstein Industrial Hygiene Branch, HASL SUBJBT: SURVEY AT HAIST PROPETIY SYMBOL: HSH:MSW. Thisl property was purchased during MED operation and used as a dumping ground for refinery residues generated by Linde Air Products during their period of participation in the refinery operations program. \It 2 consists of 10 acres in addition to a perpetual .ease- ment right to a strip of land, 10 feet wide and 3600 feet long. The area is located in North Tonawanda, New York near the Niagara River. Because of the growth of adjacent industries, this particular piece of property has appreciated in value. During its tenure as responsible property management office, Oak

469

United States Government  

Office of Legacy Management (LM)

OOE F 1325.8 OOE F 1325.8 - EFgzk3) United States Government tiemorandum 0 wt;? -J Department of Energy DATE: SEP 2 5 1992 REPLY TO Al-TN OF: EM-421 (W. A. W illiams, 903-8149) SUBJECT: Authorization for Remedial Action at Diamond Magnesium Site in Painesville, Ohio TO: L. Price, OR The former Diamond Magnesium Company site located at 720 Fairport-Nursery Road in Painesville, Ohio, is designated for remedial action under the Formerly Utilized Sites Remedial Action Program (FUSRAP). The site is owned by Uniroyal Chemical Company and by Lonza Chemical, Incorporated. This designation is based on the results of a radiological survey and conclusions from an authority review as noted in the attached Designation Summary. Copies of the radiological survey reports and the authority

470

United States Government  

Office of Legacy Management (LM)

Z&Et,? y-p . c' Z&Et,? y-p . c' )7q/ I cuq,~ United States Government Department of Energy memoranduin I " . : I ;/ ,I DATE: hufi 2 9 1594 \ ' - y:oTFq M-421 (W. A. Ylllius, 427-1719) ' ii Y - SIJWECT: Elimination of the Sites from the Formerly Utilfzed Sites Remedial Actjon Progru TO The File In 1990, with the assistance of Mr. reviewed a number of sites that had services to the Fernald facility as sites, recommendations were made to ___ _- _ consideration under Formerly Utiltzed Sites Remedial Action Program (FUSRAP). In each case, I made or reviewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more formal record of the decision on these sites and to ratify and confirm the prior elimination of each site froa FUSRAP.

471

United States Government  

Office of Legacy Management (LM)

DOE F t325.8 DOE F t325.8 (s8s) Dl? l 36-z EFG (07-90) United States Government m e m o randum Department of Energy DATE: LUG 2 ' 3 1394 ",cl,'," EM-421 (W. A. W illiams, 427-1719) SUBJECT: Elimination of the Sites from the Formerly Utilized Sites Remedial Action Program To' The File In 1990, with the assistance of M r. Doug Tonkay and Ms. M ichelle Landis, I reviewed a number of sites that had formerly provided goods and/or services to the Fernald facility as subcontractors. For 24 of these sites, recoamnendations were aade to eliminate them from further consideration under Formerly Utilized Sites Remedial Action Program (FUSRAP). In each case, I made or reviewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more

472

- United States Government  

Office of Legacy Management (LM)

8 8 my EFG (07.90) . - United States Government . * Department of. Energy * inemorandum DATE: DEC :! ;j 1993 REPLY TO ATTN OF: EM-421 (W.'A. W illiams, 903-8149) : NY 41 I .' 41 G I? SUBJECT: Elimination of the T itanium Alloy Manufacturing Co., Niagara Falls, New York TO: The F ile I have reviewed the attached site. summary and elimination recommendation for the T itanium Alloy Manufacturing Company. I have determined that the potential for radiological contamination is low because of the lim ited duration of the activities at the site. Further, at least some of the contractual activities at the site were licensed under the Atomic Energy Act, and the licensed activities are thereby disqualified from further consideration under the Department of Energy's Formerly Utilized Sites

473

United States Government  

Office of Legacy Management (LM)

UOEF 1325.8 UOEF 1325.8 (5831 , - a.. L . . L. . c ,, . . . t ,' <, .* -,. .--1^ a "-2 (J 7 , pe-;L, United States Government memorandum Departmen: of Energy DATEAUG 1 0 1984 REPLY TO Al-fN OF: NE-20 SUBJECT: Action Description Memorandum (ADM) Review: Wayne, New Jersey Proposed 1984 Remedial Actions at TO: File After reviewing all of the pertinent facts including the attached Action Description Memorandum (ADM), I have determined that the remedial action described in the subject ADM is an action which in and of itself will have a clearly insignificant impact on the quality of the human environment within the meaning of the National Environmental Policy Act (NEPA), 42 U.S.C. 4321 et seq. The Conference Report accompanying the Energy and Water Appropriation Act

474

United States Government  

Office of Legacy Management (LM)

I8 891 I8 891 EFG (07.90) United States Government m e m o randum bepartrne% of Energy -P ' ; N. A *I Pi id : DATE: AUG 3, 9 1994 REPLY TO Al-iN OF: EM-421 (W. A. W illiams, 427-1719) r, )' \, ! c ' d, ' t ' 3 ' 2 -L SUBJECT: Elimination of the Sites from the Formerly Utilized Sites Remedial Action Program To' The File In 1990, with the assistance of M r. Doug Tonlsay and Ms. M ichelle Landis, I reviewed a nmber of sites that had formerly provided goods and/or services to the Fernald facility as subcontractors. For 24 of.these sites, recommdations were made to eliminate them from further consideration under Formerly Utilized Sites Remedial Action Program (FUSRAP). In each case, I made or reviewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more

475

United States Government  

Office of Legacy Management (LM)

81278 81278 United States Government Department of Energy memorandum - ?71 S.EP 23 F; i: 54 DATE: SEP 1 8 1991 REPLY TO ATTNOF: EM-421 (P. Blom, 3-8148) SUBJECT: Approved Categorical Exclusion for Removal Actions at Elza Gate, Tennessee TO: Lester K. Price, OR Attached is a copy of the approved Categorical Exclusion (CX) for removal of contaminated material at the Elza Gate site in Tennessee. The removal action involves the removal of radioactive contaminated soil and concrete as well as the removal of Polychlorinated Biphenyl (PCB) contaminated soil. This CX was approved by Carol Borgstrom, Office of National Environmental Policy Act Oversight (EH-25), September 9, 1991. Paul F. Blom Off-Site Branch Division of Eastern Area Programs Office of Environmental Restoration

476

United States Government  

Office of Legacy Management (LM)

D;F&g,8 C-r-I 3-3 D;F&g,8 C-r-I 3-3 .*. United States Government . memorandum DATE: JUNZO 1994 -... REPLY TO A?TN OF: EM-421 (W. A. Williams, 903-8149) Authority Determination -- Combustion Engineering Site, Windsor, SUBJECT: Connecticut To' The File The attached review, documents the basis for determining whether the Department of Energy (DOE) has authority for taking remedial action at the Combustion Engineering (CE) Site in Windsor, Connecticut, under the Formerly Utilized Sites Remedial Action Program. CE was a prime contractor for the Atomic Energy Commission (AEC) and performed high-enriched uranium fuel fabrication work from 1955 to 1967. The services furnished at the CE site included some experimental work; however, it primarily consisted of fabrication of high-enriched uranium

477

United States Government  

Office of Legacy Management (LM)

DOEF1325.8 P4 0 * 1 - 1 DOEF1325.8 P4 0 * 1 - 1 - Iq \ b- United States Government memorandum pJ .T\ \b Department of Energy DATE: OCT 9 1984 REPLY TO NE-20 All-N OF: .- Authorizations for Actions Under the Formerly Utilized Sites Remedial Action SUBJECT: Program (FUSRAP) at the St. Louis Airport Storage Site, St. Louis, MO. and the W. R. Grace Site at Curtis Bay, Md. To: J. LaGrone, Manager Oak Ridge Operations Office St. Louis Airport Storage Site, MO The House and Senate Reports for the Energy and Water Development Appropriation Act (P.L. 98-360) directed the Department of Energy "...to take the necessary steps to consolidate and dispose of the waste material from the Latty Avenue site and nearby St. Louis Airport vicinity properties locally, by reacquiring, stabilizing, and using the old 21.7

478

United States Government  

Office of Legacy Management (LM)

ooc F r325.8 ooc F r325.8 imo, EFO ,ww United States Government memorandum Department of Energy -fw?w 81ua DATE: FEB 1 5 1991 l+Ks6 sUsJECT: Elimination of the Buflovak Company Site from FUSRAP ho: The File I have reiiewed the attached preliminary site summary and recommendation for the Buflovak Company site in Buffalo, New York. I have determined that there is little likelihood of contamination at this site. Based on the above, the Buflovak Company site is hereby eliminated from further consideration under the Formerly Utilized Sites Remedial Action Program. W. Alexander Williams Designation and Certification Manager Off-Site Branch Division of Eastern Area Programs Office of Environmental Restoration Attachment - I . b e e : W e s to n E M - 4 0 ( 3 ) E M - 4 2 ( 2 ) W illiams r

479

United States Attorney General  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

93, 5 U.S. Op. Off. Legal Counsel 1, 1981 WL 30865 (U.S.A.G.) 93, 5 U.S. Op. Off. Legal Counsel 1, 1981 WL 30865 (U.S.A.G.) United States Attorney General ***1 *293 January 16, 1981 **1 The President The White House Washington, D.C. 20500 MY DEAR MR. PRESIDENT: You have asked my opinion concerning the scope of currently existing legal and constitutional authorities for the continuance of government functions during a temporary lapse in appropriations, such as the Government sustained on October 1, 1980. As you know, some initial determination concerning the extent of these authorities had to be made in the waning hours of the last fiscal year in order to avoid extreme administrative confusion that might have arisen from Congress' failure timely to enact 11 of the 13 anticipated regular appropriations bills, FN;B1[FN1]FN;F1 or a

480

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3/02 TUE 08:59 FAX 423 241 3897 OIG *-* HQ 00o2 3/02 TUE 08:59 FAX 423 241 3897 OIG *-* HQ 00o2 DOE F 132,.8 W.I: ((07.9u) United States Government Department of Energy Memorandum DATE: December 2, 2002 REPLY TO REPLY TO -36 (A02SR013) Audit Report No.: OAS-L-03-07 ATTN OF: SUBJECT: Audit of Subcontracting Practices at the Savannah River Site TO: Jeffrey M. Allison, Acting Manager, Savannah River Operations Office INTRODUCTION AND OBJECTIVE The Department of Energy (Department) has contracted with Westinghouse Savannah River Company, LLC (Westinghouse) to manage and operate the Savannah River Site (Savannah River) through September 30, 2006. As of August 2, 2002, Westinghouse had 534 open and active service procurements worth $100,000 or more each, with a total value of about $518 million, that it had awarded since October 1996.

Note: This page contains sample records for the topic "atlanta ga united" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

United States Goverment  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6/03 15:37 FAX 301 903 4656 _ CAPITAL REGION * FORS FIVEA 91002/004 6/03 15:37 FAX 301 903 4656 _ CAPITAL REGION * FORS FIVEA 91002/004 DOE-F 1325.8 (68-93) Depament of Energy United States Goverment Department of Energy Memorandum OFFICE OF .NSPECTOR GENERAL DATE: February 26, 2003 REPLY TO ATTN OF: IG-34 (A02CG004) Audit Report No.: OAS-L-03-11 SUBJECT: Audit of the Office of Science Infrastructure Modernization Initiatives TO: Acting Associate Director, Office of Laboratory Operations and Environment, Safety and Health, SC-80 The purpose of this report is to inform you of the results of our audit of the Office of Science's infrastructure modernization initiatives. The audit was performed between May and September 2002 at Departmental Headquarters, Brookhaven National Laboratory, and Argonne National Laboratory. The audit methodology is described in

482

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

w w f.b wr w f k--w .^^- - w w f.b wr w f k--w .^^- - - r - T- - * -* p -ldt - f f - - -J -vv- A n JV DOE F 1325.8 (08-93) United States Government ------- Department of Energy memorandum DATE: June 15, 2006 REPLY TO Audit Report Number: OAS-L-06-15 ATTN OF: IG-32 (A05SR029) SUBJECT Audit of "Storage Capacity of the Iligh Level Waste Tanks at the Savannah River TO: Manager, Savannah River Operations Office INTRODUCTION AND OBJECTIVE The Savannah River Site in South Carolina currently stores about 36 million gallons of waste in 49 active underground storag,* .ks. Twenty-two of these .anks do not meet Environmcntal Protection A&-.y (EPA) requirements ybr full secondary containment and must be emptied and closed by 2022 in accordance with a closure schedule approved by the EPA and the 5oith Carolina Department

483

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0/02 WED 09:58 FAX 423 241 3897 OIG 0/02 WED 09:58 FAX 423 241 3897 OIG -.- +-+ HQ ]002 rFG (07-;1) United States Government Department of Energy Memorandum DATE: October 29, 2002 REPLY TO 1G-36 (A02DN028) Audit Report No.: OAS-L-03-01 ATTN OF; SUBJECT: Audit of Procurement at the Rocky Flats Environmental Technology Site TO: Eugene Schmitt, Manager, Rocky Flats Field Office ' INTRODUCTION AND OBJECTIVE The Department of Energy (Department) and its site contractor, Kaiser-Hill Company, LLC (Kaiser-Hill), contracted in January 2000 to close the Rocky Flats Environmental Technology Site (Rocky Flats) by a target date of December'15, 2006. As of May 2002, Kaiser-Hill had awarded 784 procurements worth more than $25,000 each, with a total value of about $368.6 million, to support the complex activities required for site closure.

484

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

uV,./ J.r./ i L .. * i. uV,./ J.r./ i L .. * i. 0 r '± J o ,. NL . Jurt -. rur.mO rI[ V Jg, ]VJUU"/UU4 DOE F 1325.8 (08-93) United States Government Department of Energy Memorandum OFFICE OF INSPECTOR GENERAL DATE: January 10, 2006 REPLY TO ATTN OF: IG-34 (A06GT029) Audit Report No.: OAS-L-06-06 SUBJECT: Review of the Independent Auditor's Report on The Institute for Genomic Research for the Year Ending December 31, 2004 * TO: Manager, Chicago Office INTRODUCTION AND OBJECTIVE The Institute for Genomic Research (Institute) in Rockville, Maryland is a not-for- profit center that studies areas such as plant, microbial and mammalian genomics. The Institute receives funding from seven Federal agencies to advance its research and development. As required by the Office of Management and Budget (0MB)

485

United States Government Memorandum  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Department of Energy Department of Energy United States Government Memorandum DATE: March 21, 2008 Audit Report Number: OAS-L-08-08 REPLY TO ATTN OF: IG-321 (A07LV042) SUBJECT: Audit Report on "Accountability of Sensitive and High Risk Property at the Nevada Site Office" TO: Acting Manager, Nevada Site Office INTRODUCTION AND OBJECTIVE and control over sensitive and high risk property because of the vulnerability to loss, theft or misuse and its potential impact on national security interests or proliferation concerns. Items such as portable and desktop computers, ammunition. and firearms are examples of sensitive property. In addition, federal regulations require that Departmental organizations and designated contractors account for and control govemroent-owned high risk property, such as body armor and gas masks,

486

United States Government DATE:  

Office of Legacy Management (LM)

5oE(E;,8 ' 0 H .2+ L-1 5oE(E;,8 ' 0 H .2+ L-1 United States Government DATE: MAR 0 8 1994 REPLY TO AlTN OF: EM-421 (W. A. Williams, 903-8149) SUBJECT: Authority Determination -- Former Herring-Hall-Marvin Safe Co., Hamilton, Ohio TO: The File The attached review documents the basis for determining whether the Department of Energy (DOE) has authority for taking remedial action at the former Herring-Hall-Marvin Safe Co. facility in Hamilton, Ohio, under the Formerly Utilized Sites Remedial Action Program (FUSRAP). The facility was used for the shaping and machining of uranium metal by the Manhattan Engineer District (MED) during the Second World War. The following factors are significant in reaching a decision and are discussed in more detail in the attached authority review:

487

United States Government  

Office of Legacy Management (LM)

D;il$;,8 p! A . I I& - ' D;il$;,8 p! A . I I& - ' z United States Government &mtrne&' of Energy DATE: &uG 3, 9 394 REPLY TO AITN OF: EH-421 (W. A. Williams, 427-1719) SUBJECT: Elimination of the Sites from the Formerly Utilized Sites Remedial Action Program To' The File In 1990, with the assistance of Mr. Doug Toukay and Ms. Michelle Landis, I reviewed a number of sites that had formerly provided goods and/or services to the Fernald facility as subcontractors. For 24 of.these sites, recommdations were made to eliminate them from further consideration under Formerly Utilized Sites Remedial Action Program (FUSRAP). In each case, I made or reviewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more formal record of the decision on these sites and to ratify and confirm the

488

Unite2 States Government  

Office of Legacy Management (LM)

+39J +39J t% (3740~ - Unite2 States Government m e m o randuin L3 DATE: AU6 3, 9 %g4 REPLY TO All-N OF: m -421 (U. A. W illiams, 427-1719) -. - >' SUBJECT: Elimination of the Sites from the Formerly Utilized Sites Remedial Action Program To' The File In 1990, with the assistance of Hr. Doug Toukay and Ms. M ichelle Landis, I reviewed a number of sites that had formerly provided goods and/or services to the Fernald facility as subcontractors. For 24 of.these sites, recouwndations were made to eliminate them from further consideration under Formerly Utilized Sites Remedial Action Program (FUSRAP). In each case, I made or reviewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more formal record of the decision on these sites and to ratify and confirm the

489

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

LICE F 137: r.e Electr LICE F 137: r.e Electr onic Form App roved by CllR - 1010fJI2002 i/JI~~I United States Government Department of Energy Bonneville Power Admi istration memorandum DATE : REPLY TO AnN OF : KEPR-4 SUBJECT: Environmental Clearance Memorandum TO: Stephen Duncan Project Manager - TERS-3 Proposed Action: Removal of de-stabilized and downed trees resulting from a December 200 8 wind storm on the de-energized Lyons Ultra High Voltage Test Line NO.1. PP&A Project No.: PP&A 1309 Budget Information: Work Order # 184006 Categorical Exclusion Applied (from Subpart 0, 10 C.F.R. Part 1021): B 1.3 Routine maintenance/custodial services for buildings, structures, infrastructures, equipment. Location: Fee-owned ROW on the de-energized Lyons UHV Te st Line No .1 to the south of

490

United States Government Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

B.89) B.89) EFO (07-90) United States Government Department of Energ Memorandum SEP 24 20t DATE: REPLY TO: IG-34 (A04TG032) Audit Report No.: OAS-L-04-21 SUBJECT: Evaluation of "The Federal Energy Regulatory Commission's Cyber Security Program - 2004" TO: Chairman, Federal Energy Regulatory Commission The purpose of this report is to inform you of the results of our annual evaluation of the Federal Energy Regulatory Commission's unclassified cyber security program. This evaluation was initiated in June 2004 and our field work was conducted through September 2004. The evaluation methodology is described in the attachment to this report. Introduction and Objective The Commission's increasing reliance on information technology (IT) is consistent with satisfying the President's Management Agenda initiative of expanding electronic

491

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

/18/04 THU 11:31 FAX 423 241 3897 OIG -- /18/04 THU 11:31 FAX 423 241 3897 OIG -- + HQ 1002 DOE F 1325.8 (08-93) United States Government Department of Energy Memorandum DATE: March 17, 2004 Audit Report No. OAS-L-04-1 1 REPLY TO IG-36 (A04DN003) ATTN OF: SUBJECT; Audit of "Requests for Equitable Adjustment at the Rocky Flats Environmental Technology Site" TO: Frazer R. Lockhart, Manager, Rocky Flats Project Office INTRODUCTION AND OBJECTIVE Effective February 1, 2000, the Department of Energy's (Department) Rocky Flats Project Office (RFPO) and Kaiser-Hill Co., LLC (Kaiser-Hill), entered into a cost- plus-incentive-fee contract to close the Rocky Flats Environmental Technology Site (Rocky Flats) by December 15, 2006. Under the contract terms, Kaiser-Hlill's final incentive fee earned will be based on how well it meets established cost targets. For

492

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

. . . .... ...... ..... .. . .. . . .. . , . . . . ..- - --. -- -. , . . DOEF 1325,8 (08.93) United States Government Department of Energy memorandum DATE: August 13, 2007 1 Audit Report Number: OAS-L-07-21 REPLY TO ATTN OF: IG-32 (A06PR047) SUBJECT: Audit of Executive Compensation at Selected National Nuclear Security Administration Sites TO: Director, Policy and Internal Controls Management, NA-66 INTRODUCTION AND OBJECTIVE As part of a Department of Energy-wide audit of executive compensation, we reviewed fourN* Lti nai-.AL 4 ... :.. ,._*i Amiinistration (NiNSA)SsitCe. Speuiiiu-~l we reviewed executive cormpeisation costs incurred and claimed for Fiscal Years 2003, 2004, and 2005 at Los Alamos National Laboratory (LANL), Lawrence Livermore National Laboratory (LLNL), Sandia National Laboratories, and the Y-12

493

United States Government  

Office of Legacy Management (LM)

. v-w. . v-w. ' ;H; (07.901 United States Government 0' ; Td 2, <.<~ Department of Energy ' m e m o randum DATE: REPLY TO Al-TN OF: EM-421 (W. A. W illiams, 903-8149) SUBJECT: Authorization for Remedial Action at Alba Craft Laboratory in Oxford, Ohio L. Price, OR TO: The former Alba Craft Laboratory site at lo-14 West Rose Avenue, Oxford, Ohio, is designated for remedial action under the Formerly Utilized Sites Remedial Action Program (FUSRAP). Dr. and M rs. Gilbert Pacey, of Oxford, Ohio, own the site. This designation is based on the results of a radiological survey and conclusions from an authority review as noted in the attached Designation Summary. Copies of the radiological survey letter report and the authority review are provided for your information.

494

UNITED STATES GOVERKMENT  

Office of Legacy Management (LM)

Ojice Memornndz~nz 0 Ojice Memornndz~nz 0 UNITED STATES GOVERKMENT By application dated ;!ay 11, 1959, as a~zen:ii:d Hay 25, 1959, the a--T+- I-r-- cant requests that its license SW-33 be amend,ed to authorizt? proced- ures for t>e CCLl-ect conversion of LT6 to '3$ and by applicaticn datzci June 29, 1959, a.3 n:odifizd July 15, 1059, the shipment of uranium rdioxide pellets. Based on our rexiew of the information finished by the applicant, it is hereby determined that the applicant is qualified, by training and experience, to use special nuclear material for the pwpose requested and that the ap@icant's procedures, facilities and equip- ment are adequate to protect health and minimize danger to life and property. It is, therefore, determined that ~NM-33 may be amended to

495

United States Government  

Office of Legacy Management (LM)

ocy F 1325.8 ocy F 1325.8 rcro1 . 6Fo0?-001 w 2 3-q United States Government Department of Energ) ~mc DATE: AUG 3,9 1994 y$Jf EH-421 (W. A. Yllliams, 427-1719) MA. \tQ SUBJECT: _ Elirinrtion of the Sites froa the Formerly Utilized Sites Remedial Action Program TQ The File In 1990, with the assistance of Hr. Doug Tonkay and Hr. Nlchelle Landis, I reviewed a number of sites that had fomerly provided goods and/or services to the Fernald facility as subcontractors. For 24 of.these sites, recomendations were made to eliminate them from further consideration under Forwrly Utilized Sites Remedial A&Ion Program (FUSRAP). In each case, I made or reviewed the evaluation, and, in each case, a handwritten evaluation was prepared. This is to provide a more formal record of the decision on these sites l hd to ratify and confim the

496

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

:)£ F 13 :)£ F 13 ;' 5 H e Etectroou: Form Approved by CGJR - 01120195 (n·/w! United States Government Department of Energy Bonneville Power Administration memorandum DATE: 0 I. 7 20D 9 REPLY TO AnN OF: KEP-4 SUBJECT: Environmental Clearance Memorandum TO : Robert Macy Project Manager - TELF-TPP-3 Proposed Action: Perform routine access road maintenance to the Rockdale Microwave site . Budget Information: Work Order #180709 PP&A Project No.: 1389 Categorical Exclusions Applied (from Subpart D, 10 C.F.R. Part 1021): B1.3, Routine maintenance activities .. .for structures, rights-of-way, infrastructures such as roads, equipment. .. routine maintenance activities, corrective .... are required to maintain ... infrastructures . ..in a condition suitable for a facility to be used for its designed purpose.

497

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DOE:F 1325.8 7 DOE:F 1325.8 7 (08-93) United States Government Department of Energy memorandum DATE: April 10, 2006 REPLY TO ATTN OF: IG-32 (A05AL045) Audit Report Number: OAS-L-06-12 SUBJECT: Audit of Sandia National Laboratories' Safeguards and Security Path Forward Management Plan TO: Associate Administrator for Defense Nuclear Security INTRODUCTION AND OBJECTIVE From 2001 to 2003, approximately 500 security-related findings and observations were identified at Sandia National Laboratories (Sandia) by the Department of Energy's Office of Independent Oversight and Performance Assurance (OA), the National Nuclear Security Administration's (NNSA) Sandia Site Office (SSO), and Sandia's self assessments. Sandia senior management acknowledged the significance of the numerous findings and, in

498

United States Government Memorandum  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Department of Energy United States Government Memorandum DATE: January 26, 2007 Audit Report Number: OAS-L-07-05 REPLY TO ATTN OF: IG-34 (A06GT035) SUBJECT: Report on "The Department of Energy's Implementation of Revised OMB Circular No. A-123" TO: Acting Chief Financial Officer, CF-1 INTRODUCTION AND OBJECTIVE The Office of Management arid Budget's (OMB) revised Circular No. A-123 (Circular) requires Federal agencies to assess the adequacy of their internal controls. Beginning in Fiscal Year (FY) 2006, the Circular requires agencies to strengthen their assessment, documentation and testing of internal controls over financial reporting and prepare an annual assurance statement on the operating effectiveness of those controls. In August 2005, the Department of Energy's

499

United States Government  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4 DOE F 1325.8 (08-93) United States Government Department of Energy memorandum DATE: April 23, 2004 Audit Report Number: OAS-L-04-16 REPLY TO ATTN OF: IG-35 (A04YT023) SUBJECT: Audit Report on "Modernization Activities at the Y-12 National Security Complex" TO: Richard Speidel, Director, Policy and Internal Controls Management, NA-66 INTRODUCTION AND OBJECTIVE As part of the National Nuclear Security Administration's (NNSA) nuclear weapons complex, the Y-12 National Security Complex (Y-12) performs critical roles in strengthening national security and reducing the global threat from weapons of mass destruction. The Y-12 modernization plan (plan) seeks to foster the development of a physical plant that is efficient and effective in serving its national security missions. The

500

. United States Government  

Office of Legacy Management (LM)

,:n5.5.8 ,:n5.5.8 ,849, EfG pw, . United States Government DATE: AUG 2 i994 y#J;; EM-421 (W. A. Williams, 427-1719) sUBJECT: -Elimination of the Robbins & Myers Site, Springfield, Ohio 11179 I The File TO: I have reviewed the attached elimination recommendation and the original historical records for the Myers & Robbins facility in Springfield, Ohio. I have determined that there is little likelihood of radioactive contamination at these sites. The only record of activity at this site by Department of Energy predecessors is an equipment test of a pump in March 1975. This test involved limited amounts of radioactive materials and there was a serious effort to decontaminate the equipment at the conclusion of the tests. Based on the above, the Myers & Robbins site in Springfield, Ohio, is