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Sample records for atlanta ga georgia

  1. Atlanta, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Solarity Sustainable World Capital TCE Energy Corporation Waspa Wheego Electric Cars Energy Incentives for Atlanta, Georgia City of Atlanta - Sustainable Home Initiative in...

  2. Archive Reference Buildings by Climate Zone: 3A Atlanta, Georgia...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Archive Reference Buildings by Climate Zone: 3A Atlanta, Georgia Archive Reference Buildings by Climate Zone: 3A Atlanta, Georgia Here you will find past versions of the reference ...

  3. Eleventh ARM Science Team Meeting Proceedings, Atlanta, Georgia...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2001). 1 Eleventh ARM Science Team Meeting Proceedings, Atlanta, Georgia, March 19-23, 2001 From 1997 to 2001, ground-based remote sensing of thick clouds was performed at...

  4. EECBG Success Story: Atlanta Suburb Greases the Path to Savings...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atlanta Suburb Greases the Path to Savings with Biodiesel EECBG Success Story: Atlanta ... of the City of Savannah, GA. EECBG Success Story: In Savannah, Georgia, Even the ...

  5. Registration Open for National Environmental Justice Advisory Council (NEJAC) Public Meeting, September 11-12, 2013, Atlanta, Georgia

    Broader source: Energy.gov [DOE]

    Registration Open for National Environmental Justice Advisory Council (NEJAC) Public Meeting, September 11-12, 2013, Atlanta, Georgia.

  6. Georgia and Arkansas Residential Energy Code Field Studies | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Georgia and Arkansas Residential Energy Code Field Studies Georgia and Arkansas Residential Energy Code Field Studies Lead Performer: Southeast Energy Efficiency Alliance - Atlanta, GA Partners: - Advanced Energy - Raleigh, NC - Arkansas Economic Development Commission, Energy Office - Little Rock, AR - Georgia Department of Community Affairs - Atlanta, GA - Georgia Environmental Finance Authority - Atlanta, GA - Southface - Atlanta, GA DOE Total Funding: $1,399,999 Cost Share:

  7. Remarks by Federal Blue Ribbon Commission J. David Jameson Atlanta, GA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Federal Blue Ribbon Commission J. David Jameson Atlanta, GA October 18, 2011 Good Morning. I am David Jameson. I am President and CEO of the Greater Aiken, South Carolina, Chamber of Commerce. I am here today in my capacity as current Chairman of the SRS Community Reuse Organization. The SRSCRO is a non-profit regional group supporting economic diversification and job creation in a five-county in Georgia and South Carolina near the Department of Energy's Savannah River Site. We are unique among

  8. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    SciTech Connect (OSTI)

    Not Available

    2011-05-01

    This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

  9. Atlanta Chemical Engineering LLC | Open Energy Information

    Open Energy Info (EERE)

    Atlanta Chemical Engineering LLC Jump to: navigation, search Logo: Atlanta Chemical Engineering LLC Name: Atlanta Chemical Engineering LLC Place: Marietta, Georgia Country: United...

  10. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    Energy Savers [EERE]

    Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting Atlanta, Georgia - March 16-18, 2011 May 2011 ii NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information,

  11. Secretary Moniz's Keynote at the Sam Nunn Policy Forum in Atlanta, GA --

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    As Delivered | Department of Energy Keynote at the Sam Nunn Policy Forum in Atlanta, GA -- As Delivered Secretary Moniz's Keynote at the Sam Nunn Policy Forum in Atlanta, GA -- As Delivered April 16, 2014 - 11:35am Addthis Dr. Ernest Moniz Dr. Ernest Moniz Secretary of Energy Well, thank you. Professor Bankoff, Provost Bras, I'll also acknowledge the Bank of America support of this symposium and also my monthly support of the Bank of America which is quite considerable with those credit

  12. USD E'16 ATLANTA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    USD E'16 ATLANTA 2016 REGISTER NOW! 15th Annual DOE Small Business Forum & Expo MAY 23 - 25, 2016 Atlanta Marriott Marquis 265 Peachtree Center Avenue Atlanta, GA 30303 Government per diem $135.00/night (+taxes/fees) Register Now for USDOE16! smallbusinessconference.energy.gov CLICK HERE TO REGISTER

  13. Georgia/Incentives | Open Energy Information

    Open Energy Info (EERE)

    Local Loan Program Yes Atlanta Gas Light - Energy Efficiency Incentive Program (Georgia) Utility Rebate Program No Biomass Sales and Use Tax Exemption (Georgia) Sales Tax...

  14. Marietta, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Act Smart Grid Projects in Marietta, Georgia Cobb Electric Membership Corporation Smart Grid Project Registered Energy Companies in Marietta, Georgia Atlanta Chemical...

  15. Advancing Residential Retrofits in Atlanta

    SciTech Connect (OSTI)

    Jackson, Roderick K; Kim, Eyu-Jin; Roberts, Sydney; Stephenson, Robert

    2012-07-01

    This report will summarize the home energy improvements performed in the Atlanta, GA area. In total, nine homes were retrofitted with eight of the homes having predicted source energy savings of approximately 30% or greater based on simulated energy consumption.

  16. Georgia - Compare - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia Georgia

  17. Georgia - Rankings - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia Georgia

  18. Georgia - Search - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia Georgia

  19. Microsoft Word - Final TEC Notes Atlanta 07.doc

    Office of Environmental Management (EM)

    TRANSPORTATION EXTERNAL COORDINATION WORKING GROUP MEETING January 31-February 1, 2007 Atlanta, Georgia Welcome and Meeting Overview The U.S. Department of Energy (DOE), Transportation External Coordination Working Group (TEC) held its 27th meeting on January 31-February 1, 2007, in Atlanta, Georgia. One hundred thirteen participants, representing national, State, Tribal, and local government; industry; professional organizations; and other interested parties, met to address a variety of issues

  20. Georgia's 6th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Grid Project Registered Energy Companies in Georgia's 6th congressional district Atlanta Chemical Engineering LLC Cellnet Legacy Environmental Solutions Prenova Inc formerly...

  1. Georgia's 11th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Grid Project Registered Energy Companies in Georgia's 11th congressional district Atlanta Chemical Engineering LLC Prenova Inc formerly Service Resources Inc Sriya Innovations Inc...

  2. Georgia's 13th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Grid Project Registered Energy Companies in Georgia's 13th congressional district Atlanta Chemical Engineering LLC Prenova Inc formerly Service Resources Inc Sriya Innovations Inc...

  3. Cobb County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Smart Grid Project Registered Energy Companies in Cobb County, Georgia Atlanta Chemical Engineering LLC H I Solutions Inc Prenova Inc formerly Service Resources Inc...

  4. EECBG Success Story: Atlanta Suburb Greases the Path to Savings with

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Biodiesel | Department of Energy Atlanta Suburb Greases the Path to Savings with Biodiesel EECBG Success Story: Atlanta Suburb Greases the Path to Savings with Biodiesel December 7, 2011 - 3:33pm Addthis Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Downtown Smyrna, Georgia is using

  5. Clean Cities: Clean Cities-Georgia

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atlanta was designated as the first Clean Cities coalition in the nation at the Georgia Dome in 1993. Prior to being elected as the coalition's executive director, Francis served...

  6. Meeting Materials: Consent-Based Siting Public Meeting in Atlanta (April

    Energy Savers [EERE]

    11, 2016) | Department of Energy Meeting Materials: Consent-Based Siting Public Meeting in Atlanta (April 11, 2016) Meeting Materials: Consent-Based Siting Public Meeting in Atlanta (April 11, 2016) The Department will host a public meeting on consent-based siting on April 11th in Atlanta at the Georgia Institute of Technology Conference Center. The meeting will include a presentation by John Kotek, Acting Assistant Secretary for Nuclear Energy at the Department of Energy; a speaker panel

  7. Atlanta, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Global Energy Holdings Group formerly Xethanol Corporation Navajo Wind Energy Plum Combustion Radiance Solar Servidyne SilvaGas Corporation FERCO Enterprises Inc Solar Systems...

  8. 2009 National Electric Transmission Congestion Study- Atlanta Workshop

    Broader source: Energy.gov [DOE]

    On July 29, 2008, DOE hosted a regional pre-study workshop in Atlanta, GA to receive input and suggestions concerning the 2009 National Electric Transmission Congestion Study. The agenda and full...

  9. WNRC diverting to Atlanta FRC | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    PDF icon NOTICE - NARA Diversion Prgm re WNRC Transfers Routed to FRC-Atlanta, GA.pdf More Documents & Publications Denver FRC diverting to Kingsridge FRC (Dayton, OH) POINT OF CONTACT RESPONSIBILITIES FOR RECORDS MANAGEMENT Records Management POC Responsibilities

  10. Consent-Based Siting Public Meeting Georgia Tech Hotel and Conference Center

    Energy Savers [EERE]

    Consent-Based Siting Public Meeting Georgia Tech Hotel and Conference Center 800 Spring Street N.W. Atlanta, GA 30308 April 11, 2016 12:00-1:00 PM Informal Poster Session (Before Meeting Begins) 1:00-1:15 PM Welcome and Introductions 1:15-1:30 PM Presentation by John Kotek, Acting Assistant Secretary for Nuclear Energy, Department of Energy 1:30-2:00 PM Speaker Panel, Panelists TBD 2:00-2:45 PM Facilitated Public Discussion with Panelists and John Kotek 2:45-3:00 PM Break 3:00-4:00 PM

  11. Dalton, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Georgia: Energy Resources (Redirected from Dalton, GA) Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.7698021, -84.9702228 Show Map Loading map......

  12. Making Connections for Atlanta Students

    Broader source: Energy.gov [DOE]

    The Atlanta Students in Energy and Climate Forum, held in April 2013, brought together entrepreneurs, and professors to share experiences and motivations in their pursuit of environmental stewardship.

  13. Southface Energy Institute: Advanced Commercial Buildings Initiative |

    Energy Savers [EERE]

    Department of Energy Southface Energy Institute: Advanced Commercial Buildings Initiative Southface Energy Institute: Advanced Commercial Buildings Initiative Southface Energy Institute: Advanced Commercial Buildings Initiative Lead Performer: Southface Energy Institute - Atlanta, GA Partners: - City of Atlanta - Atlanta, GA - Georgia Institute of Technology - Atlanta, GA - Kendeda Fund - Atlanta, GA - Oak Ridge National Laboratory - Oak Ridge, TN - Acuity Brands Lighting - Atlanta, GA -

  14. In Savannah, Georgia, Even the Data is Green | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    In Savannah, Georgia, Even the Data is Green In Savannah, Georgia, Even the Data is Green May 5, 2011 - 4:49pm Addthis The new energy efficient IT Data Center in Savannah, GA. | ...

  15. ,"Georgia Natural Gas Industrial Price (Dollars per Thousand...

    U.S. Energy Information Administration (EIA) Indexed Site

    586-8800",,,"1292016 12:15:32 AM" "Back to Contents","Data 1: Georgia Natural Gas Industrial Price (Dollars per Thousand Cubic Feet)" "Sourcekey","N3035GA3" "Date","Georgia...

  16. Georgia Power Company (GPC), Oglethorpe Power Corporation (OPC), Municipal

    Office of Environmental Management (EM)

    Electric Authority of Georgia (MEAG) | Department of Energy Georgia Power Company (GPC), Oglethorpe Power Corporation (OPC), Municipal Electric Authority of Georgia (MEAG) Georgia Power Company (GPC), Oglethorpe Power Corporation (OPC), Municipal Electric Authority of Georgia (MEAG) Location: Waynesboro, GA Eligibility: 1703 Snapshot In February 2014, the Department of Energy issued $6.5 billion in loan guarantees to support the construction of the nation's next generation of advanced

  17. Newton County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    in Newton County, Georgia Covington, Georgia Mansfield, Georgia Newborn, Georgia Oxford, Georgia Porterdale, Georgia Social Circle, Georgia Retrieved from "http:...

  18. Chatham County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Georgia Bloomingdale, Georgia Garden City, Georgia Georgetown, Georgia Isle of Hope, Georgia Montgomery, Georgia Pooler, Georgia Port Wentworth, Georgia Savannah, Georgia...

  19. Atlanta TEC Meeting -- Tribal Group Summary 3-6-07

    Office of Environmental Management (EM)

    Atlanta, GA - January 31, 2007 Session Chaired by: Jay Jones (DOE, Office of Civilian Radioactive Waste Management, OCRWM) Regular Members in Attendance: Kenny Anderson (Las Vegas Paiute Tribe), Richard Arnold (Las Vegas Indian Center/Pahrump Paiute Tribe), Tony Boyd (Pueblo of Acoma), Rob Burnside (Confederated Tribes of the Umatilla Indian Reservation, CTUIR), Floyd Chaney (Mohegan Tribe), Sandra Covi (Union Pacific Railroad), Martha Crosland (DOE/Office of General Counsel, GC), Kristen Ellis

  20. Liberty County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    A. Places in Liberty County, Georgia Allenhurst, Georgia Flemington, Georgia Fort Stewart, Georgia Gumbranch, Georgia Hinesville, Georgia Midway, Georgia Riceboro, Georgia...

  1. Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Atlanta Airport Converts Shuttles to CNG to someone by E-mail Share Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Facebook Tweet about Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Twitter Bookmark Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Google Bookmark Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Delicious Rank Alternative Fuels Data Center: Atlanta Airport Converts

  2. Rabun County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Places in Rabun County, Georgia Clayton, Georgia Dillard, Georgia Mountain City, Georgia Sky Valley, Georgia Tallulah Falls, Georgia Tiger, Georgia Retrieved from "http:...

  3. Walton County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in Walton County, Georgia Between, Georgia Good Hope, Georgia Jersey, Georgia Loganville, Georgia Monroe, Georgia Social Circle, Georgia...

  4. Madison County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in Madison County, Georgia Carlton, Georgia Colbert, Georgia Comer, Georgia Danielsville, Georgia Hull, Georgia Ila, Georgia Royston,...

  5. Gwinnett County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    BJ Gas Recovery Biomass Facility Places in Gwinnett County, Georgia Auburn, Georgia Berkeley Lake, Georgia Braselton, Georgia Buford, Georgia Dacula, Georgia Duluth, Georgia...

  6. Cherokee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Ball Ground, Georgia Canton, Georgia Holly Springs, Georgia Mountain Park, Georgia Nelson, Georgia Waleska, Georgia Woodstock, Georgia Retrieved from "http:en.openei.orgw...

  7. City of La Grange, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: City of La Grange Place: Georgia Phone Number: 706-883-2030 Website: www.lagrange-ga.orgUtilities. Outage Hotline: 706-883-2130 References: EIA...

  8. City of Hampton, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    search Name: City of Hampton Place: Georgia Website: www.cityofhampton-ga.govservi Outage Hotline: 770-946-4306; after hours- 911 References: EIA Form EIA-861 Final Data...

  9. Hart County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in Hart County, Georgia Bowersville, Georgia Canon, Georgia Hartwell, Georgia Reed Creek, Georgia Royston, Georgia Retrieved from "http:...

  10. Harris County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Harris County, Georgia Hamilton, Georgia Pine Mountain, Georgia Shiloh, Georgia Waverly Hall, Georgia West Point, Georgia Retrieved from "http:en.openei.orgw...

  11. Houston County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Georgia Byron, Georgia Centerville, Georgia Perry, Georgia Robins AFB, Georgia Warner Robins, Georgia Retrieved from "http:en.openei.orgwindex.php?titleHoustonCounty,...

  12. Meriwether County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Meriwether County, Georgia Gay, Georgia Greenville, Georgia Haralson, Georgia Lone Oak, Georgia Luthersville, Georgia...

  13. Middle Georgia Biofuels | Open Energy Information

    Open Energy Info (EERE)

    Georgia Biofuels Jump to: navigation, search Name: Middle Georgia Biofuels Place: East Dublin, Georgia Zip: 31027 Product: Georgia-based biodiesel producer. References: Middle...

  14. Workplace Charging Challenge Partner: City of Atlanta | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Atlanta Workplace Charging Challenge Partner: City of Atlanta Workplace Charging Challenge Partner: City of Atlanta The City of Atlanta's provision of workplace charging builds upon a larger strategy to improve transportation in the region and provide sustainable transportation options. The first component focuses on increasing the adoption of alternative transportation methods including walking, biking, public transportation, car-sharing, and alternative workplace strategies such as

  15. Clark Atlanta Universities (CAU) Energy Related Research Capabilities |

    Office of Environmental Management (EM)

    Department of Energy Clark Atlanta Universities (CAU) Energy Related Research Capabilities Clark Atlanta Universities (CAU) Energy Related Research Capabilities How energy related research has helped Clark Atlanta University. PDF icon Clark Atlanta Universities (CAU) Energy Related Research Capabilities More Documents & Publications 2008-2009 Winter Fuels Outlook Conference Ronald Reagan Building and International Trade Center HYDROGEN AND FUEL CELL EDUCATION AT CALIFORNIA STATE

  16. City of Atlanta Video (Text Version) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atlanta Video (Text Version) City of Atlanta Video (Text Version) Aaron Bastian: According to the U.S. EPA, Atlanta is one of the top ten cities in the country for green buildings. It is a city that is walk and bike friendly, and now Atlanta is second in the country for the sale of electric vehicles. Atlanta has seen tremendous adoption of plug-in electric vehicles amongst her residents, but to truly meet driver demand, chargers must be both accessible and available at major destinations such as

  17. Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Biorefinery Groundbreaking | Department of Energy Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking October 6, 2007 - 4:21pm Addthis SOPERTON, GA - U.S. Secretary of Energy Samuel W. Bodman today attended a groundbreaking ceremony for Range Fuels' biorefinery - one of the nation's first commercial-scale cellulosic ethanol biorefineries - and made the following statement.

  18. Columbia County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Places in Columbia County, Georgia Evans, Georgia Grovetown, Georgia Harlem, Georgia Martinez, Georgia Retrieved from "http:en.openei.orgwindex.php?titleColumbiaCounty,Geor...

  19. Oconee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Oconee County, Georgia Bishop, Georgia Bogart, Georgia North High Shoals, Georgia Watkinsville, Georgia Retrieved...

  20. Terrell County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in Terrell County, Georgia Bronwood, Georgia Dawson, Georgia Parrott, Georgia Sasser, Georgia Retrieved from "http:en.openei.orgw...

  1. Franklin County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 4 Climate Zone Subtype A. Places in Franklin County, Georgia Canon, Georgia Carnesville, Georgia Franklin Springs, Georgia Gumlog, Georgia Lavonia,...

  2. Appling County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Georgia Appling County Pellets Places in Appling County, Georgia Baxley, Georgia Graham, Georgia Surrency, Georgia Retrieved from "http:en.openei.orgw...

  3. Upson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Upson County, Georgia Hannahs Mill, Georgia Lincoln Park, Georgia Salem, Georgia Sunset Village, Georgia Thomaston,...

  4. Peach County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    A. Places in Peach County, Georgia Byron, Georgia Fort Valley, Georgia Perry, Georgia Warner Robins, Georgia Retrieved from "http:en.openei.orgwindex.php?titlePeachCounty,G...

  5. GA-AL-SC | Department of Energy

    Energy Savers [EERE]

    GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E

  6. BRMF Georgia Mountain Biofuels | Open Energy Information

    Open Energy Info (EERE)

    BRMF Georgia Mountain Biofuels Jump to: navigation, search Name: BRMFGeorgia Mountain Biofuels Place: Clayton, Georgia Product: Biodiesel plant developer in Georgia. References:...

  7. Clark Atlanta Universities (CAU) Energy Related Research Capabilities...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PDF icon Clark Atlanta Universities (CAU) Energy Related Research Capabilities More ... CALIFORNIA STATE UNIVERSITY, LOS ANGELES GATE Center for Automotive Fuel Cell Systems at ...

  8. NETL F 451.1/1-1, Categorical Exclusion Designation Form

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    163 Praxair, Inc. Tonawanda, WV Georgia Institute of Technology, 505 10th Street, NW, Atlanta, GA 30332 FESCCAESD Kenneth David Lyons Improving Energy Efficiency of Air...

  9. Upcoming Clean Energy Manufacturing Initiative (CEMI) Southeast Regional

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Summit on July 9 in Atlanta, GA | Department of Energy Upcoming Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit on July 9 in Atlanta, GA Upcoming Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit on July 9 in Atlanta, GA June 25, 2015 - 8:19am Addthis On July 9, the U.S. Department of Energy will be holding the Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit at the Renaissance Atlanta Midtown Hotel in Atlanta, Georgia. The

  10. Foreign Obligations Implementation Status Presentation

    National Nuclear Security Administration (NNSA)

    January 13, 2004 Crowne Plaza Ravinia Atlanta, January 13, 2004 Crowne Plaza Ravinia Atlanta, Georgia Georgia Obligations Accounting Implementation Workshop Obligations Accounting Implementation Workshop Foreign Obligations Implementation Status Brian G. Horn U.S. Nuclear Regulatory Commission January 13, 2004 Obligations Accounting Implementation Workshop January 13, 2 Obligations Accounting Implementation Workshop January 13, 2004 Crowne Plaza Ravinia Atlanta, GA 004 Crowne Plaza Ravinia

  11. Jones County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    in Jones County, Georgia Alterra Bioenergy LLC Places in Jones County, Georgia Gray, Georgia Macon, Georgia Retrieved from "http:en.openei.orgwindex.php?titleJonesCo...

  12. Glascock County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Zone Subtype A. Places in Glascock County, Georgia Edge Hill, Georgia Gibson, Georgia Mitchell, Georgia Retrieved from "http:en.openei.orgwindex.php?titleGlascockCounty,Geor...

  13. Wayne County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Zone Number 2 Climate Zone Subtype A. Places in Wayne County, Georgia Jesup, Georgia Odum, Georgia Screven, Georgia Retrieved from "http:en.openei.orgwindex.php?titleWayne...

  14. Whitfield County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Zone Subtype A. Registered Energy Companies in Whitfield County, Georgia Wilson and Dalton Places in Whitfield County, Georgia Cohutta, Georgia Dalton, Georgia Tunnel Hill,...

  15. Butts County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in Butts County, Georgia Flovilla, Georgia Jackson, Georgia Jenkinsburg, Georgia Retrieved from "http:en.openei.orgw...

  16. Effingham County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 2 Climate Zone Subtype A. Places in Effingham County, Georgia Guyton, Georgia Rincon, Georgia Springfield, Georgia Retrieved from "http:en.openei.orgw...

  17. Pickens County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 4 Climate Zone Subtype A. Places in Pickens County, Georgia Jasper, Georgia Nelson, Georgia Talking Rock, Georgia Retrieved from "http:en.openei.orgw...

  18. Reference Buildings by Climate Zone and Representative City: 3A Atlanta, Georgia

    Broader source: Energy.gov [DOE]

    In addition to the ZIP file for each building type, you can directly view the "scorecard" spreadsheet that summarizes the inputs and results for each location. This Microsoft Excel spreadsheet is also included in the ZIP file. For version 1.4, only the IDF file is included.

  19. Meeting Materials: Consent-Based Siting Public Meeting in Atlanta...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    The Department will host a public meeting on consent-based siting on April 11th in Atlanta ... in turn serve as a framework for working with potential host communities in the future. ...

  20. Building Efficiency Technologies by Tomorrow's Engineers and...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Heat Exchangers, AL - Advanced Renewable Energy - Emrgy Hydro - Atlanta, GA - Fox Theater - Atlanta, GA - Atlanta BeltLine - Atlanta, GA - Ford - Atlanta, GA - SawHorse - ...

  1. Urban airshed modeling of air quality impacts of alternative transportation fuel use in Los Angeles and Atlanta

    SciTech Connect (OSTI)

    NONE

    1997-12-01

    The main objective of NREL in supporting this study is to determine the relative air quality impact of the use of compressed natural gas (CNG) as an alternative transportation fuel when compared to low Reid vapor pressure (RVP) gasoline and reformulated gasoline (RFG). A table lists the criteria, air toxic, and greenhouse gas pollutants for which emissions were estimated for the alternative fuel scenarios. Air quality impacts were then estimated by performing photochemical modeling of the alternative fuel scenarios using the Urban Airshed Model Version 6.21 and the Carbon Bond Mechanism Version IV (CBM-IV) (Geary et al., 1988) Using this model, the authors examined the formation and transport of ozone under alternative fuel strategies for motor vehicle transportation sources for the year 2007. Photochemical modeling was performed for modeling domains in Los Angeles, California, and Atlanta, Georgia.

  2. Bryan County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 2 Climate Zone Subtype A. Places in Bryan County, Georgia Pembroke, Georgia Richmond Hill, Georgia Retrieved from "http:en.openei.orgwindex.php?titleBryanCounty,Ge...

  3. Sumter County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Registered Energy Companies in Sumter County, Georgia Habitat for Humanity Places in Sumter County, Georgia Americus, Georgia Andersonville,...

  4. Georgia's 8th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Georgia. Registered Energy Companies in Georgia's 8th congressional district Alterra Bioenergy Alterra Bioenergy LLC Biomass Energy Services Inc Middle Georgia Biofuels Retrieved...

  5. Towns County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 4 Climate Zone Subtype A. Places in Towns County, Georgia Hiawassee, Georgia Young Harris, Georgia Retrieved from "http:en.openei.orgwindex.php?titleTownsCounty,G...

  6. Marion County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Marion County, Georgia Buena Vista, Georgia Retrieved from "http:en.openei.orgwindex.php?titleMarionCounty,Georgia...

  7. 2014 Race to Zero Student Design Competition: Georgia Institute...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia...

  8. Georgia Shore Assistance Act

    SciTech Connect (OSTI)

    Pendergrast, C.

    1984-01-01

    The Georgia General Assembly passed the Shore Assistance Act in 1979 in order to fill a regulatory gap in the state's management of its coastal resources. A review of its legislative history, purposes, applications, and effects in terms of the sand sharing system of sand dunes, beaches, sandbars, and shoals concludes that the Act is poorly drafted. In its application on the oceanfront, it betrays its intent and protects the oceanfront owner. It has failed to satisfy the requirements of the public trust in the tidal foreshore. Amendments to clarify its understanding of the functions and values of the sand-sharing system should also conform with the state's duties under the public trust. 139 references.

  9. Georgia Power- Solar Buyback Program

    Broader source: Energy.gov [DOE]

    Georgia Power, the state's largest utility, has established a green power program, that allows the company to purchase limited solar generation at a premium price based on other customers volunta...

  10. Georgia Power- Advanced Solar Initiative

    Broader source: Energy.gov [DOE]

    Note: According to Georgia Power's website, the Advanced Solar Initiative's final program guidelines are due to be published on June 25th and the bidding period for is expected to open on July 10,...

  11. Georgia Power | Open Energy Information

    Open Energy Info (EERE)

    An investor-owned utility that serves 2.25m customers in 155 counties of Georgia, USA. Coordinates: 33.748315, -84.391109 Show Map Loading map... "minzoom":false,"mappi...

  12. Building America Case Study: Ground Source Heat Pump Research, TaC Studios Residence, Atlanta, Georigia (Fact Sheet), Technology Solutions for New and Existing Homes, Energy Efficiency & Renewable Energy (EERE)

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Ground Source Heat Pump Research, TaC Studios Residence Atlanta, Georgia PROJECT INFORMATION Construction: New Home Type: Single-family Builder: TaC Studios, tacstudios.com Size: 3,570 ft 2 Price Range: about $750,000 Date completed: 2011 Climate zone: Mixed-humid PERFORMANCE DATA HERS index: 66 Builder standard practice = 75 Case study house 3,570 ft 2 Projected annual energy cost savings: $493 Incremental cost of energy efficiency measures: $51,036 Incremental annual mortgage: $1,449 Annual

  13. Camilla, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Map This article is a stub. You can help OpenEI by expanding it. Camilla is a city in Mitchell County, Georgia. It falls under Georgia's 2nd congressional district.12...

  14. Georgia Transmission Corp | Open Energy Information

    Open Energy Info (EERE)

    Corp Jump to: navigation, search Name: Georgia Transmission Corp Place: Georgia References: EIA Form EIA-861 Final Data File for 2010 - File1a1 EIA Form 861 Data Utility Id 7197...

  15. Adrian, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    is a stub. You can help OpenEI by expanding it. Adrian is a city in Emanuel County and Johnson County, Georgia. It falls under Georgia's 12th congressional district.12...

  16. Alamo, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Map This article is a stub. You can help OpenEI by expanding it. Alamo is a town in Wheeler County, Georgia. It falls under Georgia's 1st congressional district.12...

  17. Ailey, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Map This article is a stub. You can help OpenEI by expanding it. Ailey is a city in Montgomery County, Georgia. It falls under Georgia's 12th congressional district.12...

  18. Chatsworth, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    This article is a stub. You can help OpenEI by expanding it. Chatsworth is a city in Murray County, Georgia. It falls under Georgia's 9th congressional district.12 Registered...

  19. Rome, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Rome is a city in Floyd County, Georgia. It falls under Georgia's 11st congressional district.12...

  20. Georgia Nonprofit Helps Homeowners Save Energy

    Office of Energy Efficiency and Renewable Energy (EERE)

    Residents in Georgia are living in more comfortable and energy-efficient homes because of this Savannah based weatherization program.

  1. Georgia Nuclear Profile - Power Plants

    U.S. Energy Information Administration (EIA) Indexed Site

    nuclear power plants, summer capacity and net generation, 2010" "Plant name/total reactors","Summer capacity (mw)","Net generation (thousand mwh)","Share of State nuclear net generation (percent)","Owner" "Edwin I Hatch Unit 1, Unit 2","1,759","13,902",41.5,"Georgia Power Co" "Vogtle Unit 1, Unit 2","2,302","19,610",58.5,"Georgia Power Co" "2 Plants 4

  2. Better Buildings Challenge, Atlanta Nears Halfway Mark in Meeting Citywide Goal of 20% Energy Savings

    Broader source: Energy.gov [DOE]

    The Energy Department yesterday recognized Atlanta for its progress and leadership in meeting a citywide goal to improve the energy performance of its buildings by 20% by 2020.

  3. Energy conserving site design case study: Shenandoah, Georgia. Final report

    SciTech Connect (OSTI)

    Not Available

    1980-01-01

    The case study examines the means by which energy conservation can be achieved at an aggregate community level by using proper planning and analytical techniques for a new town, Shenandoah, Georgia, located twenty-five miles southwest of Atlanta's Hartsfield International Airport. A potentially implementable energy conservation community plan is achieved by a study team examining the land use options, siting characteristics of each building type, alternate infrastructure plans, possible decentralized energy options, and central utility schemes to determine how community energy conservation can be achieved by use of pre-construction planning. The concept for the development of mixed land uses as a passively sited, energy conserving community is based on a plan (Level 1 Plan) that uses the natural site characteristics, maximizes on passive energy siting requirement, and allows flexibility for the changing needs of the developers. The Level 2 Plan is identical with Level 1 plan plus a series of decentraized systems that have been added to the residential units: the single-family detached, the apartments, and the townhouses. Level 3 Plan is similar to the Level 1 Plan except that higher density dwellings have been moved to areas adjacent to central site. The total energy savings for each plan relative to the conventional plan are indicated. (MCW)

  4. US SoAtl GA Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per

  5. File:USDA-CE-Production-GIFmaps-GA.pdf | Open Energy Information

    Open Energy Info (EERE)

    GA.pdf Jump to: navigation, search File File history File usage Georgia Ethanol Plant Locations Size of this preview: 776 600 pixels. Full resolution (1,650 1,275 pixels,...

  6. Erratum: "Sensitivity of the interpretation of the experimental...

    Office of Scientific and Technical Information (OSTI)

    Authors: Stacey, W. M. 1 + Show Author Affiliations Georgia Tech Fusion Research Center, Atlanta, Georgia 30332 (United States) Georgia Tech Fusion Research Center, Atlanta, ...

  7. Bacon County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    169-2006 Climate Zone Number 2 Climate Zone Subtype A. Places in Bacon County, Georgia Alma, Georgia Retrieved from "http:en.openei.orgwindex.php?titleBaconCounty,Georgia&o...

  8. McDuffie County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in McDuffie County, Georgia Dearing, Georgia Thomson, Georgia Retrieved from "http:en.openei.orgwindex.php?titleMcDuffieCounty,Geor...

  9. Recovery Act State Memos Georgia

    Broader source: Energy.gov (indexed) [DOE]

    Georgia For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION

  10. Chattahoochee Hill Country, Georgia: Energy Resources | Open...

    Open Energy Info (EERE)

    Hill Country, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.721548, -83.2599068 Show Map Loading map... "minzoom":false,"mappings...

  11. ,"Georgia Natural Gas LNG Storage Withdrawals (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Withdrawals (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  12. ,"Georgia Natural Gas LNG Storage Additions (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Additions (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  13. Americus, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    2nd congressional district.12 Registered Energy Companies in Americus, Georgia Habitat for Humanity References US Census Bureau Incorporated place and minor civil...

  14. GEORGIA RECOVERY ACT SNAPSHOT | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Georgia has substantial natural resources, including biomass and hydroelectric power .The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on the ...

  15. Georgia/Wind Resources | Open Energy Information

    Open Energy Info (EERE)

    Guidebook >> Georgia Wind Resources WindTurbine-icon.png Small Wind Guidebook * Introduction * First, How Can I Make My Home More Energy Efficient? * Is Wind Energy Practical...

  16. Georgia (country): Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Country Profile Name Georgia Population Unavailable GDP Unavailable Energy Consumption 0.17 Quadrillion Btu 2-letter ISO code GE 3-letter ISO code GEO Numeric ISO...

  17. Georgia Power- Small Commercial Energy Efficiency Program

    Broader source: Energy.gov [DOE]

    Georgia Power offers Small Commercial rebates to customers on qualifying rates. See program web site for additional details including eligibility information.

  18. DOE Kicks Off National "Change a Light, Change the World" Campaign

    Broader source: Energy.gov [DOE]

    ATLANTA, GA - U.S. Department of Energy (DOE) Assistant Secretary for Policy and International Affairs Karen A. Harbert today joined Georgia Power President and CEO Mike Garrett to kick off the...

  19. GE Wind Energy | Open Energy Information

    Open Energy Info (EERE)

    Energy Jump to: navigation, search Name: GE Wind Energy Place: Atlanta, Georgia Zip: GA 30339 Sector: Wind energy Product: GE's wind energy division, formed as a result of the...

  20. GEORGIA TECH ENERGY AND SUSTAINABILITY SERVICES (GTESS) ANSI...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GEORGIA TECH ENERGY AND SUSTAINABILITY SERVICES (GTESS) ANSI-Accredited Standards ... BACKGROUND Georgia Tech Energy and Sustainability Services (GTESS) is an American ...

  1. Atkinson County, Georgia ASHRAE 169-2006 Climate Zone | Open...

    Open Energy Info (EERE)

    Atkinson County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Atkinson County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone...

  2. City of Oxford, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    Oxford, Georgia (Utility Company) Jump to: navigation, search Name: Oxford City of Place: Georgia Phone Number: 770-786-7004 Website: www.oxfordgeorgia.org Outage Hotline:...

  3. Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery...

  4. Georgia Tech Center for Innovative Fuel Cell and Battery Technologies...

    Open Energy Info (EERE)

    Innovative Fuel Cell and Battery Technologies Jump to: navigation, search Name: Georgia Tech Center for Innovative Fuel Cell and Battery Technologies Place: Georgia Product: The...

  5. Hancock County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Hancock County, Georgia Sparta, Georgia Retrieved from "http:en.openei.orgwindex.php?titleHancockCounty,Georgi...

  6. City of Adel, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    Georgia (Utility Company) Jump to: navigation, search Name: City of Adel Place: Georgia Phone Number: (229) 896-3601 Website: www.cityofadel.usdepartments Outage Hotline: (229)...

  7. City of Lawrenceville, Georgia (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    Georgia (Utility Company) Jump to: navigation, search Name: City of Lawrenceville Place: Georgia Phone Number: 770.963.2414 Website: www.lawrencevillega.orggovern Outage Hotline:...

  8. City of Jackson, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    Jackson, Georgia (Utility Company) Jump to: navigation, search Name: Jackson City of Place: Georgia Phone Number: 770-775-3858 Website: www.cityofjacksonga.com196El Facebook:...

  9. City of Hogansville, Georgia (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    search Name: Hogansville City of Place: Georgia Website: www.cityofhogansville.org Facebook: https:www.facebook.comhogansville.georgia Outage Hotline: 706.637.6648...

  10. Georgia Tech School of Civil and Environmental Engineering |...

    Open Energy Info (EERE)

    School of Civil and Environmental Engineering Jump to: navigation, search Name: Georgia Tech School of Civil and Environmental Engineering Abbreviation: Georgia Tech School of CEE...

  11. Energy Secretary Moniz to Keynote Sam Nunn Policy Forum in Atlanta

    Broader source: Energy.gov [DOE]

    Secretary Moniz will make a key announcement and meet with Georgia Tech students, discuss DOE-funded projects

  12. Ecological investigation of a hazardous waste site, Warner Robins, Georgia

    SciTech Connect (OSTI)

    Wade, M.; Billig, P.

    1993-05-01

    Landfill No. 4 and the sludge lagoon at Robins Air Force Base, Warner Robins, Georgia, were added to the United States Environmental Protection Agency (EPA) National Priorities List in 1987 because of highpotential for contaminant migration. Warner Robins is located approximately 90 miles southeast of Atlanta. In 1990 CH2M HILL conducted a Remedial Investigation at the base that recommended that further ecological assessment investigations be conducted (CH2M HILL 1990). The subject paper is the result of this recommendation. The ecological study was carried out by the Hazardous Waste Remedial Actions Program (HAZWRAP)Division of Martin Marietta Energy Systems, Inc., working jointly with its subcontractor CDM (CDM 1992a). The primary area of investigation (Zone 1) included the sludge lagoon, Landfill No. 4, the wetland area east of the landfill and west of Hannah Road (including two sewage treatment ponds), and the area between Hannah Road and Horse Creek (Fig. 1). The bottomland forest wetlands of Zone 1 extend from the landfill east to Horse Creek. Surface water and groundwater flow across Zone 1 is generally in an easterly direction toward Horse Creek. Horse Creek is a south-flowing tributary of the Ocmulgee River Floodplain. The objective of the study was to perform a quantitative analysis of ecological risk associated with the ecosystems present in Zone 1. This investigation was unique because the assessment was to be based upon many measurement endpoints resulting in both location-specific data and data that would assess the condition of the overall ecosystem. The study was segregated into five distinct field investigations: hydrology, surface water and sediment, aquatic biology, wetlands ecology, and wildlife biology.

  13. DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    60tifrancis2012o.pdf More Documents & Publications DeKalb CountyMetropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project DeKalb CountyMetropolitan...

  14. DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    vt060francis2010p.pdf More Documents & Publications DeKalb CountyMetropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project DeKalb CountyMetropolitan...

  15. DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    60tifrancis2011p.pdf More Documents & Publications DeKalb CountyMetropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project DeKalb CountyMetropolitan...

  16. Building America Case Study: Ground Source Heat Pump Research, TaC Studios Residence, Atlanta, Georigia (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2014-09-01

    As part of the NAHB Research Center Industry Partnership, Southface partnered with TaC Studios, an Atlanta based architecture firm specializing in residential and light commercial design, on the construction of a new test home in Atlanta, GA in the mixed-humid climate. This home serves as a residence and home office for the firm's owners, as well as a demonstration of their design approach to potential and current clients. Southface believes the home demonstrates current best practices for the mixed-humid climate, including a building envelope featuring advanced air sealing details and low density spray foam insulation, glazing that exceeds ENERGY STAR requirements, and a high performance heating and cooling system. Construction quality and execution was a high priority for TaC Studios and was ensured by a third party review process. Post construction testing showed that the project met stated goals for envelope performance, an air infiltration rate of 2.15 ACH50. The homeowner's wished to further validate whole house energy savings through the project's involvement with Building America and this long-term monitoring effort. As a Building America test home, this home was evaluated to detail whole house energy use, end use loads, and the efficiency and operation of the ground source heat pump and associated systems. Given that the home includes many non-typical end use loads including a home office, pool, landscape water feature, and other luxury features not accounted for in Building America modeling tools, these end uses were separately monitored to determine their impact on overall energy consumption.

  17. DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Vehicle Project | Department of Energy 2 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting PDF icon arravt060_ti_francis_2012_o.pdf More Documents & Publications DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project Puget Sound Clean Cities Petroleum Reduction Project

  18. DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Vehicle Project | Department of Energy 1 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation PDF icon arravt060_ti_francis_2011_p.pdf More Documents & Publications DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project Clean Cities 2009 Petroleum Displacement Awards

  19. DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Vehicle Project | Department of Energy 0 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C. PDF icon tiarravt060_francis_2010_p.pdf More Documents & Publications DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project Clean Cities Recovery Act: Vehicle & Infrastructure Deployment

  20. DOE ZERH Case Study: Heirloom Design Build, Euclid Avenue, Atlanta, GA

    SciTech Connect (OSTI)

    none,

    2015-09-01

    Case study of a DOE 2015 Housing Innovation Award winning custom home in the mixed-humid climate that got a HERS 50 without PV, with 2x6 16” on center walls with R-19 ocsf; basement with R-28 ccsf, R-5 rigid foam under slab; sealed attic with R-28 ocsf under roof deck; 22.8 SEER; 12.5 HSPF heat pump.

  1. Workplace Charging Challenge Partner: Georgia Institute of Technology |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Georgia Institute of Technology Workplace Charging Challenge Partner: Georgia Institute of Technology Workplace Charging Challenge Partner: Georgia Institute of Technology Georgia Institute of Technology is a leader in innovation and is committed to practicing sustainability. Georgia Tech's Parking and Transportation Services office is renowned for its support of alternative transportation options, and is pleased to offer new and expanding plug-in electric vehicle (PEV)

  2. SEP Success Story: Lighting Up Georgia Convenience Stores | Department of

    Energy Savers [EERE]

    Energy Lighting Up Georgia Convenience Stores SEP Success Story: Lighting Up Georgia Convenience Stores March 28, 2012 - 2:23pm Addthis One of several Georgia convenience stores that improved lighting while saving energy and money. | Courtesy of Outlaw Consulting, Inc. One of several Georgia convenience stores that improved lighting while saving energy and money. | Courtesy of Outlaw Consulting, Inc. Convenience stores across Georgia are saving energy thanks to energy efficient lighting

  3. Alternative Fuels Data Center: Georgia Transportation Data for Alternative

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Fuels and Vehicles Georgia Transportation Data for Alternative Fuels and Vehicles to someone by E-mail Share Alternative Fuels Data Center: Georgia Transportation Data for Alternative Fuels and Vehicles on Facebook Tweet about Alternative Fuels Data Center: Georgia Transportation Data for Alternative Fuels and Vehicles on Twitter Bookmark Alternative Fuels Data Center: Georgia Transportation Data for Alternative Fuels and Vehicles on Google Bookmark Alternative Fuels Data Center: Georgia

  4. Fossil Energy | National Energy Technology Laboratory | Georgia...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering and an adjunct professor in the College of Computing and the Ernest J. Scheller College of Business. He served as a Vice President and Director of the Georgia Tech...

  5. Central Georgia EMC- Photovoltaic Rebate Program

    Broader source: Energy.gov [DOE]

    In June 2008, Central Georgia Electric Membership Corporation (CGEMC) began offering a rebate of $450 per kilowatt (kW) to residential members who install photovoltaic (PV) systems that are...

  6. Georgia Power- Energy Efficiency Home Improvement Rebates

    Broader source: Energy.gov [DOE]

    Georgia Power offers up to $2,575 in rebates to customers who choose to improve home performance with whole building BPI certified efficiency measures or up to $700 for individual improvements from...

  7. Energy Incentive Programs, Georgia | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    What load managementdemand response options are available to me? Georgia Power offers a set of real-time pricing programs. In one set of options under this service, customers are ...

  8. Milton, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Milton is a city in Fulton County, Georgia.1 References US Census Bureau Incorporated...

  9. Pine Mountain, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    article is a stub. You can help OpenEI by expanding it. Pine Mountain is a town in Harris County and Meriwether County, Georgia. It falls under Georgia's 3rd congressional...

  10. North Georgia Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Name: North Georgia Elec Member Corp Place: Georgia Phone Number: Dalton: (706) 259-9441; Fort Oglethorpe: (706) 866-2231; Calhoun: (706) 629-3160; Trion:...

  11. Georgia's 2nd congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Energy Companies in Georgia's 2nd congressional district First United Ethanol LLC Habitat for Humanity Retrieved from "http:en.openei.orgwindex.php?titleGeorgia%27s2ndc...

  12. Central Georgia El Member Corp | Open Energy Information

    Open Energy Info (EERE)

    Central Georgia El Member Corp Place: Georgia Phone Number: 770-775-7857 Website: www.cgemc.com Twitter: @CentralGAEMC Outage Hotline: 770-775-7857 References: EIA Form EIA-861...

  13. College Park, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. College Park is a city in Clayton County and Fulton County, Georgia. It falls under Georgia's 5th...

  14. City of Commerce, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    City of Commerce, Georgia (Utility Company) Jump to: navigation, search Name: City of Commerce Place: Georgia Phone Number: (706) 335-4200 Website: www.commercega.orgContentDef...

  15. McCaysville, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Act Smart Grid Projects in McCaysville, Georgia Tri State Electric Membership Corporation Smart Grid Project Utility Companies in McCaysville, Georgia Tri-State Electric Member...

  16. Ben Hill County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Ben Hill County, Georgia Fitzgerald, Georgia Retrieved from "http:en.openei.orgwindex.php?titleBenHillCounty,Geo...

  17. Middle Georgia El Member Corp | Open Energy Information

    Open Energy Info (EERE)

    El Member Corp Place: Georgia Phone Number: 1-800-342-0144 Website: www.mgemc.com Facebook: https:www.facebook.comMiddleGeorgiaEMC Outage Hotline: 229-268-2671; 800-342-0144...

  18. 2014 Race to Zero Student Design Competition: Georgia Institute of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Technology Profile | Department of Energy Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile, from the U.S. Department of Energy. PDF icon rtz_georgia_profile.pdf More Documents & Publications 2014 Race to Zero Student Design Competition: Auburn University Profile 2014 Race to Zero Student Design Competition: University of

  19. Lighting Up Georgia Convenience Stores | Department of Energy

    Energy Savers [EERE]

    Up Georgia Convenience Stores Lighting Up Georgia Convenience Stores March 28, 2012 - 5:01pm Addthis One of several Georgia convenience stores that improved lighting while saving energy and money. | Courtesy of Outlaw Consulting, Inc. One of several Georgia convenience stores that improved lighting while saving energy and money. | Courtesy of Outlaw Consulting, Inc. Kristin Swineford Communication Specialist, Weatherization and Intergovernmental Programs "Programs such as this are a real

  20. Georgia Recovery Act State Memo | Department of Energy

    Office of Environmental Management (EM)

    Georgia Recovery Act State Memo Georgia Recovery Act State Memo Georgia has substantial natural resources, including biomass and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on the nation's energy and environmental future. The Recovery Act investments in Georgia are supporting a broad range of clean energy projects, from energy efficiency and the smart grid to environmental cleanup and alternative fuels and vehicles. Through these

  1. Categorical Exclusion Determination (Georgia-Alabama-SouthCarolina System)

    Energy Savers [EERE]

    | Department of Energy Categorical Exclusion Determination (Georgia-Alabama-SouthCarolina System) Categorical Exclusion Determination (Georgia-Alabama-SouthCarolina System) PDF icon Proposed rate adjustment for the Georgia-Alabama-South Carolina System of Projects More Documents & Publications CX-001068: Categorical Exclusion Determination SOCO-4-E Wholesale Power Rate Schedule Regulation-1

  2. EA-1963: Elba Liquefaction Project, Savannah, Georgia

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Federal Energy Regulatory Commission (FERC) is preparing, with DOE as a cooperating agency, an EA to analyze the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Additional information is available at FERCs eLibrary website, elibrary.ferc.gov/idmws/docket_search.asp; search for docket number PF13-3.

  3. EA-1963: Elba Liquefaction Project, Savannah, Georgia | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy 3: Elba Liquefaction Project, Savannah, Georgia EA-1963: Elba Liquefaction Project, Savannah, Georgia SUMMARY The Federal Energy Regulatory Commission (FERC) is preparing, with DOE as a cooperating agency, an environmental assessment (EA) that will analyze the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Additional information is available at FERC's

  4. Barrow County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Barrow County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.0142667, -83.6986568 Show Map Loading map... "minzoom":false,"mappin...

  5. Georgia Green Loans Save & Sustain Program | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    technologies not identified Program Info Sector Name Non-Profit Administrator Georgia Green Loans Website http:www.georgiagreenloans.org Funding Source U.S. Small Business...

  6. Atkinson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Atkinson County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.2932161, -82.8640623 Show Map Loading map... "minzoom":false,"mapp...

  7. Clay County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.6447931, -85.0025539 Show Map Loading map... "minzoom":false,"mappingservice":"goog...

  8. Dawson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Dawson County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.412912, -84.1435136 Show Map Loading map... "minzoom":false,"mapping...

  9. Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    W. Paul Bowers, Georgia Power, President & CEO WHAT: Tour Vogtle 3 and 4 Nuclear Reactor Sites and speech on Administration efforts to restart America's nuclear energy industry. ...

  10. Irwin County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Irwin County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.5893221, -83.2934086 Show Map Loading map... "minzoom":false,"mapping...

  11. Stone Mountain, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Stone Mountain, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.8081608, -84.170196 Show Map Loading map... "minzoom":false,"mappin...

  12. Georgia Department of Natural Resources (GDNR) | Open Energy...

    Open Energy Info (EERE)

    References Retrieved from "http:en.openei.orgwindex.php?titleGeorgiaDepartmentofNaturalResources(GDNR)&oldid765343" Categories: Organizations Oil and Gas State Oil and...

  13. Georgia's 9th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Resource Solutions ECO Solutions LLC Greenleaf Environmental Solutions Wilson and Dalton Utility Companies in Georgia's 9th congressional district Tri-State Electric Member...

  14. Sec. Moniz to Georgia, Energy Department Scheduled to Close on...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    New Nuclear Power Plant Reactors Sec. Moniz to Georgia, Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors February 19, 2014 - ...

  15. Mountain Park, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Park, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.8442715, -84.1293605 Show Map Loading map... "minzoom":false,"mappingservice"...

  16. Gresham Park, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Gresham Park, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.7034405, -84.3143682 Show Map Loading map... "minzoom":false,"mapping...

  17. Belvedere Park, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Belvedere Park, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 32.4606984, -84.9040969 Show Map Loading map... "minzoom":false,"mappi...

  18. Georgia-UNEP Risoe Technology Needs Assessment Program | Open...

    Open Energy Info (EERE)

    UNEP Risoe Technology Needs Assessment Program Jump to: navigation, search Name Georgia-UNEP Risoe-Technology Needs Assessment Program AgencyCompany Organization UNEP-Risoe...

  19. Polk County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Polk County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.0132398, -85.1479364 Show Map Loading map... "minzoom":false,"mappings...

  20. Hall County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hall County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.30778, -83.804868 Show Map Loading map... "minzoom":false,"mappingserv...

  1. Washington County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Washington County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 32.962702, -82.820974 Show Map Loading map... "minzoom":false,"mapp...

  2. Georgia's 4th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Vega Biofuels Inc formerly Vega Promotional Systems Retrieved from "http:en.openei.orgwindex.php?titleGeorgia%27s4thcongressionaldistrict&oldid1854...

  3. sorbent-georgia-tech | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rapid Temperature Swing Adsorption Using PolymerSupported Amine Composite Hollow Fibers Project No.: DE-FE0007804 Georgia Tech Research Corporation is developing, fabricating, and...

  4. Georgia-World Bank Climate Projects | Open Energy Information

    Open Energy Info (EERE)

    Projects Jump to: navigation, search Name Georgia-World Bank Climate Projects AgencyCompany Organization World Bank Focus Area Renewable Energy, Hydro Topics Background analysis...

  5. City of Mansfield, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    search Name: City of Mansfield Place: Georgia Website: www.mansfieldga.comutilities. Facebook: https:www.facebook.commansfieldga Outage Hotline: 770-710-8235 References: EIA...

  6. Sandy Springs, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Springs, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.9242688, -84.3785379 Show Map Loading map... "minzoom":false,"mappingservi...

  7. ,"Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand...

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)",1,"Annual",2012 ,"Release...

  8. ,"Georgia Natural Gas Imports Price All Countries (Dollars per...

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic Feet)",1,"Annual",2014...

  9. EECBG Success Story: Georgia County Turning Industrial and Farm...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia County Turning Industrial and Farm Waste Into Big Energy Savings EECBG Success ... Learn more. Addthis Related Articles EECBG Success Story: County Aims to Save with ...

  10. Pierce County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Pierce County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.343806, -82.1713632 Show Map Loading map... "minzoom":false,"mapping...

  11. GEORGIA GENERAL ASSEMBLY 4/2010

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GEORGIA GENERAL ASSEMBLY 4/2010 10 LC 94 2861 House Resolution 1823 By: Representatives Murphy of the 120 th , Harbin of the 118 th , Frazier of the 123 rd , Howard of the 121 st , Sims of the 119 th , and others A RESOLUTION Urging the United States Department of Energy, the United States Congress, and the current administration to continue the development of Yucca Mountain as the site for permanent storage of defense nuclear waste and commercial spent nuclear fuel and requesting that the

  12. Energy Department Invests $600,000 in University-Industry Partnerships...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    funding, develop partnerships with industry, and improve manufacturing education. ... Georgia Institute of Technology (Atlanta, Georgia): Georgia Tech will support 20 student ...

  13. Georgia: Data Center and Historic Municipal Building Go Green | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy Georgia: Data Center and Historic Municipal Building Go Green Georgia: Data Center and Historic Municipal Building Go Green August 21, 2013 - 9:45am Addthis Data centers can consume 100 to 200 times more electricity than standard office spaces, making them prime candidates for energy-efficient designs that can save money and reduce electricity use. In Savannah, Georgia, energy savings from the greening of a data center and the retrofit of the city's visitor's center are helping the

  14. White County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. White County is a county in Georgia. Its FIPS County Code is 311. It is classified as ASHRAE...

  15. Webster County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Webster County is a county in Georgia. Its FIPS County Code is 307. It is classified as...

  16. Pike County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Pike County is a county in Georgia. Its FIPS County Code is 231. It is classified as ASHRAE...

  17. Mitchell County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Mitchell County is a county in Georgia. Its FIPS County Code is 205. It is classified as...

  18. Richmond County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Richmond County is a county in Georgia. Its FIPS County Code is 245. It is classified as...

  19. Johnson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Johnson County is a county in Georgia. Its FIPS County Code is 167. It is classified as...

  20. Wheeler County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Wheeler County is a county in Georgia. Its FIPS County Code is 309. It is classified as...

  1. Evans County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Evans County is a county in Georgia. Its FIPS County Code is 109. It is classified as ASHRAE...

  2. Henry County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Henry County is a county in Georgia. Its FIPS County Code is 151. It is classified as ASHRAE...

  3. City of Palmetto, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    Place: Georgia Phone Number: (770) 463-3322 Website: citypalmetto.comindex.aspx?ni Outage Hotline: (770) 463-3322 References: EIA Form EIA-861 Final Data File for 2010 -...

  4. Tift County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Its FIPS County Code is 277. It is classified as ASHRAE 169-2006 Climate Zone Number 3 Climate Zone Subtype A. Registered Energy Companies in Tift County, Georgia Biomass...

  5. Miller County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Miller County is a county in Georgia. Its FIPS County Code is 201. It is classified as ASHRAE...

  6. Central Georgia EMC- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Central Georgia Electric Member Corporation (CGEMC) offers rebates for residential customers to increase the energy efficiency of existing homes or to build new energy efficient homes.  This year,...

  7. Taylor County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Taylor County is a county in Georgia. Its FIPS County Code is 269. It is classified as ASHRAE...

  8. Montgomery County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Montgomery County is a county in Georgia. Its FIPS County Code is 209. It is classified as...

  9. Murray County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Murray County is a county in Georgia. Its FIPS County Code is 213. It is classified as ASHRAE...

  10. Jackson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Jackson County is a county in Georgia. Its FIPS County Code is 157. It is classified as...

  11. Floyd County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Floyd County is a county in Georgia. Its FIPS County Code is 115. It is classified as ASHRAE...

  12. Lee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Lee County is a county in Georgia. Its FIPS County Code is 177. It is classified as ASHRAE...

  13. Stewart County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Stewart County is a county in Georgia. Its FIPS County Code is 259. It is classified as...

  14. Atlanta Survey

    U.S. Energy Information Administration (EIA) Indexed Site

    Number of Fleets . . . . . . . . . . . . . . . 3,589 2,569 651 369 SIC Codes Ag.For.Fish. . . . . . . . . . . . . . . . . 140 65 31 Q Mining . . . . . . . . . . . . . . . . . ....

  15. Georgia Tech's Rohatgi Wins Second Annual Rappaport Award - News Releases |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NREL Georgia Tech's Rohatgi Wins Second Annual Rappaport Award December 10, 2003 Golden, Colo. - The U.S. Department of Energy's National Renewable Energy Laboratory (NREL) has presented the 2003 Paul Rappaport Renewable Energy and Energy Efficiency Award to Ajeet Rohatgi, founding director of the University Center of Excellence for Photovoltaics Research and Education at the Georgia Institute of Technology. "Dr. Rohatgi has for more than a quarter century focused his immense technical

  16. Georgia Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Georgia Regions National Science Bowl® (NSB) NSB Home About High School High School Students High School Coaches High School Regionals High School Rules, Forms, and Resources Middle School Attending National Event Volunteers 2015 Competition Results News Media WDTS Home Contact Information National Science Bowl® U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: 202-586-6702 E: Email Us High School Regionals Georgia Regions Print Text Size: A

  17. Georgia Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Georgia Regions National Science Bowl® (NSB) NSB Home About High School Middle School Middle School Students Middle School Coaches Middle School Regionals Middle School Rules, Forms, and Resources Attending National Event Volunteers 2015 Competition Results News Media WDTS Home Contact Information National Science Bowl® U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: 202-586-6702 E: Email Us Middle School Regionals Georgia Regions Print

  18. Georgia - Seds - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia - Seds - U.S. Energy Information Administration (EIA) The page does not exist for . To view this page, please select a state: United States Alabama Alaska Arizona Arkansas California Colorado Connecticut Delaware District of Columbia Florida Georgia Hawaii Idaho Illinois Indiana Iowa Kansas Kentucky Louisiana Maine Maryland Massachusetts Michigan Minnesota Mississippi Missouri Montana Nebraska Nevada New Hampshire New Jersey New Mexico New York North Carolina North Dakota Ohio Oklahoma

  19. Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee

    Office of Environmental Management (EM)

    Laboratory to Highlight Administration Support for Nuclear Energy | Department of Energy to Visit Georgia Nuclear Reactor Site and Tennessee Laboratory to Highlight Administration Support for Nuclear Energy Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee Laboratory to Highlight Administration Support for Nuclear Energy February 13, 2012 - 6:16pm Addthis WASHINGTON, D.C. - U.S. Secretary of Energy Secretary Steven Chu will visit the Vogtle nuclear power plant in

  20. Barrow County, Georgia ASHRAE 169-2006 Climate Zone | Open Energy...

    Open Energy Info (EERE)

    Barrow County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Barrow County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone Number...

  1. Ben Hill County, Georgia ASHRAE 169-2006 Climate Zone | Open...

    Open Energy Info (EERE)

    Ben Hill County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Ben Hill County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone...

  2. Bacon County, Georgia ASHRAE 169-2006 Climate Zone | Open Energy...

    Open Energy Info (EERE)

    Bacon County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Bacon County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone Number...

  3. EECBG Success Story: In Savannah, Georgia, Even the Data is Green...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    In Savannah, Georgia, Even the Data is Green EECBG Success Story: In Savannah, Georgia, Even the Data is Green May 5, 2011 - 4:49pm Addthis The new energy efficient IT Data Center ...

  4. EECBG Success Story: Georgia County Turning Industrial and Farm Waste Into

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Big Energy Savings | Department of Energy Georgia County Turning Industrial and Farm Waste Into Big Energy Savings EECBG Success Story: Georgia County Turning Industrial and Farm Waste Into Big Energy Savings March 30, 2011 - 2:44pm Addthis Interior view of the Gwinnett County "Gas to Energy" Project. | Photo courtesy of Gwinnett County, Georgia Interior view of the Gwinnett County "Gas to Energy" Project. | Photo courtesy of Gwinnett County, Georgia Gwinnett County,

  5. Radiance Solar | Open Energy Information

    Open Energy Info (EERE)

    Radiance Solar Jump to: navigation, search Name: Radiance Solar Place: Atlanta, Georgia Zip: 30318 Product: Commercial and residential PV installer based in Atlanta. Coordinates:...

  6. Wheego Electric Cars | Open Energy Information

    Open Energy Info (EERE)

    Wheego Electric Cars Jump to: navigation, search Name: Wheego Electric Cars Place: Atlanta, Georgia Zip: 30318 Sector: Vehicles Product: Atlanta-based Wheego has designed compact...

  7. Sustainable World Capital | Open Energy Information

    Open Energy Info (EERE)

    World Capital Jump to: navigation, search Name: Sustainable World Capital Place: Atlanta, Georgia Zip: 30326 Product: Atlanta-based firm that connects companies with institutional...

  8. A Computational Study of the Aerodynamics and Aeroacoustics of a Flatback Airfoil Using Hybrid RANS-LES

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Computational Study of the Aerodynamics and Aeroacoustics of a Flatback Airfoil Using Hybrid RANS-LES Christopher Stone ∗ Computational Science & Engineering, Athens, GA, 30606, USA Matthew Barone † Sandia National Laboratories, Albuquerque, NM, 87185-1124, USA C. Eric Lynch ‡ and Marilyn J. Smith § Georgia Institute of Technology, Atlanta, Georgia, 30332-0150, USA This work compares the aerodynamic and aeroacoustic predictions for flatback air- foil geometries obtained by applying

  9. Smart Manufacturing Institute Industry Day Workshop

    Broader source: Energy.gov [DOE]

    AMO hosted an Industry Day workshop to explain the concept, vision, and technology needs associated with support for a Clean Energy Manufacturing Innovation Institute on Smart Manufacturing. The workshop was held on February 25, 2015 at the Georgia Tech Hotel & Conference Center in Atlanta, GA.

  10. Georgia Natural Gas Underground Storage Withdrawals (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Withdrawals (Million Cubic Feet) Georgia Natural Gas Underground Storage Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1970's 33 27 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date: 3/31/2016 Referring Pages: Withdrawals of Natural Gas from Underground Storage - All Operators Georgia Underground Natural Gas Storage -

  11. FUPWG Meeting Agenda - Jekyll Island, Georgia | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Jekyll Island, Georgia FUPWG Meeting Agenda - Jekyll Island, Georgia Logo for the FUPWG Spring 2012 meeting showing a crane, a lake, and wind turbines. The logo reads: Preserving our future with energy efficiency. April 11-12, 2012 Hosted by AGL Resources Wednesday, April 11, 2012 8:30 am Welcome Hank Linginfelter, EVP Distribution Operations - AGL Resources 8:45 am Chairman's Corner David McAndrew, FEMP 9:00 am Washington Update Tim Unruh, FEMP 9:30 am UESC Data Collection Update Evan Fuka,

  12. Making it pay in Athens, GA

    SciTech Connect (OSTI)

    Malloy, M.G.

    1997-04-01

    The materials recovery facility (MRF) in Athens, GA, is a well-fed recycling facility. But, if the local government has its way, it will be even better fed in the near future. The Athens-Clarke County (ACC) regional municipality in which the facility resides has a put-or-pay contract with the plant`s owner/operator, under which the more it feeds the MRF, the more money it receives in return, through the sale of recycled end products. The ACC Solid Waste Department uses a volume-based waste collection system that encourages residents to recycle--the more they recycle, the less trash they have to put out, and the less they pay each month. The Athens facility, which will be a featured site tour at next month`s WasteExpo `97 in nearby Atlanta, had its ground-breaking two years ago, in April 1995. ACC is responsible for delivering material--or seeing that recyclables are delivered--to the MRF, which is owned and operated by Resource Recovery Systems (RRS, Centerbrook, Conn.). Over the past year, ACC has stepped up various incentives for businesses to recycle and send their recyclables to the facility, including instituting pilot programs for commercial interests that offer them versions of volume-based collection similar to that done by residents.

  13. Alternative Fuels Data Center: Georgia Sets the Pace for Plug-In Electric

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Vehicles Georgia Sets the Pace for Plug-In Electric Vehicles to someone by E-mail Share Alternative Fuels Data Center: Georgia Sets the Pace for Plug-In Electric Vehicles on Facebook Tweet about Alternative Fuels Data Center: Georgia Sets the Pace for Plug-In Electric Vehicles on Twitter Bookmark Alternative Fuels Data Center: Georgia Sets the Pace for Plug-In Electric Vehicles on Google Bookmark Alternative Fuels Data Center: Georgia Sets the Pace for Plug-In Electric Vehicles on Delicious

  14. SBOT GEORGIA SOUTHEASTERN POWER ADMIN POC Ann Craft Telephone

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GEORGIA SOUTHEASTERN POWER ADMIN POC Ann Craft Telephone (706) 213-3823 Email annc@sepa.doe.gov ADMINISTATIVE / WASTE / REMEDIATION Office Administrative Services 561110 Facilities Support Services 561210 Security Systems Services (except Locksmiths) 561621 Locksmiths 561622 Exterminating and Pest Control Services 561710 Janitorial Services 561720 Landscaping Services 561730 Other Nonhazardous Waste Treatment and Disposal 562219 Remediation Services 562910 CONSTRUCTION Industrial Building

  15. US SoAtl GA Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    household (2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to...

  16. Sensible Solar Fueling Energy Revolution in Georgia | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Joshua DeLung During his recent commencement address at the Georgia Institute of Technology, Energy Secretary Steven Chu hailed the ingenuity of the engineers responsible for the Industrial Revolution. He noted, however, that the carbon emissions from that pivotal era have caused the world's climate to change drastically. "More frequent heat waves and increased water stress in many areas of the world are predicted," he said. "Rising sea levels and the severity of hurricanes and

  17. Sandia, Georgia Institute of Technology Form Academic Collaboration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Georgia Institute of Technology Form Academic Collaboration - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Fuel Cycle Defense

  18. Microsoft Word - DOE-ID-14-043 Georgia Institute of Tech. _1...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Georgia Institute of Technology will conduct laboratory scale research on metal ion adsorption from aqueous solutions to provide a better understanding of the performance of...

  19. Georgia Natural Gas Input Supplemental Fuels (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Input Supplemental Fuels (Million Cubic Feet) Georgia Natural Gas Input Supplemental Fuels (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1960's 0 0 0 1970's 0 0 0 0 0 0 0 0 0 0 1980's 24 57 151 84 28 121 124 248 241 292 1990's 209 185 166 199 123 130 94 14 16 12 2000's 73 51 7 14 5 0 3 2 52 2010's 732 701 660 642 635 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data.

  20. Georgia Natural Gas Underground Storage Injections All Operators (Million

    U.S. Energy Information Administration (EIA) Indexed Site

    Cubic Feet) Underground Storage Injections All Operators (Million Cubic Feet) Georgia Natural Gas Underground Storage Injections All Operators (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1970's 123 366 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date: 3/31/2016 Referring Pages: Injections of Natural Gas into Underground

  1. Georgia Natural Gas Underground Storage Net Withdrawals All Operators

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) Net Withdrawals All Operators (Million Cubic Feet) Georgia Natural Gas Underground Storage Net Withdrawals All Operators (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1970's -90 -339 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date: 3/31/2016 Referring Pages: Net Withdrawals of Natural Gas from

  2. DOE Zero Energy Ready Home Case Study: Heirloom Design Build...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Heirloom Design Build, Euclid Avenue, Atlanta, GA DOE Zero Energy Ready Home Case Study: Heirloom Design Build, Euclid Avenue, Atlanta, GA Case study of a DOE 2015 Housing ...

  3. EERE Success Story-Georgia: Data Center and Historic Municipal Building

    Office of Environmental Management (EM)

    Go Green | Department of Energy Georgia: Data Center and Historic Municipal Building Go Green EERE Success Story-Georgia: Data Center and Historic Municipal Building Go Green August 21, 2013 - 9:45am Addthis Data centers can consume 100 to 200 times more electricity than standard office spaces, making them prime candidates for energy-efficient designs that can save money and reduce electricity use. In Savannah, Georgia, energy savings from the greening of a data center and the retrofit of

  4. Georgia Natural Gas % of Total Residential Deliveries (Percent)

    Gasoline and Diesel Fuel Update (EIA)

    % of Total Residential Deliveries (Percent) Georgia Natural Gas % of Total Residential Deliveries (Percent) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 2.33 2.18 2.36 2.42 2.30 2.38 2.09 2000's 2.82 2.51 2.59 2.56 2.60 2.58 2.52 2.37 2.44 2.48 2010's 2.90 2.40 2.35 2.48 2.64 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date: 3/31/2016

  5. Georgia Natural Gas LNG Storage Net Withdrawals (Million Cubic Feet)

    Gasoline and Diesel Fuel Update (EIA)

    Net Withdrawals (Million Cubic Feet) Georgia Natural Gas LNG Storage Net Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 534 -1,598 -1,359 -169 -203 -525 596 149 545 343 1990's 1,345 390 16 -42 -94 -1,464 -189 -153 -698 -1,403 2000's -1,126 6,210 2,397 -2,138 -1,052 -1,436 -5,737 1,323 2,481 1,972 2010's 379 2,542 1,378 1,205 3,085 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure

  6. Georgia Natural Gas Total Consumption (Million Cubic Feet)

    Gasoline and Diesel Fuel Update (EIA)

    Total Consumption (Million Cubic Feet) Georgia Natural Gas Total Consumption (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 371,376 368,579 337,576 2000's 413,845 351,109 383,546 379,761 394,986 412,560 420,469 441,107 425,043 462,799 2010's 530,030 522,897 615,771 625,283 652,230 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release

  7. Georgia Natural Gas Imports from All Countries (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    from All Countries (Million Cubic Feet) Georgia Natural Gas Imports from All Countries (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 0 2000's 0 2,563 16,837 43,927 105,203 132,062 146,766 170,243 135,711 142,244 2010's 106,454 75,641 59,266 15,575 7,155 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date: 3/31/2016 Referring

  8. Georgia Natural Gas LNG Storage Additions (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Additions (Million Cubic Feet) Georgia Natural Gas LNG Storage Additions (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 20,484 1,508 1,555 1,024 678 1,834 1,942 1,150 1,702 2,930 1990's 2,779 1,969 1,573 1,855 3,788 3,746 6,523 3,221 1,760 607 2000's 3,241 6,772 3,426 5,422 5,570 5,971 7,705 2,817 4,372 3,182 2010's 2,693 3,306 2,097 1,385 7,130 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid

  9. Georgia Natural Gas LNG Storage Withdrawals (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Withdrawals (Million Cubic Feet) Georgia Natural Gas LNG Storage Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 19,950 3,106 2,914 1,193 881 2,359 1,346 1,001 1,157 2,586 1990's 1,435 1,579 1,557 1,896 3,881 5,210 6,712 3,374 2,458 2,010 2000's 4,367 562 1,029 3,283 4,518 4,535 1,968 1,493 1,891 1,210 2010's 2,314 764 719 180 4,046 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure

  10. Georgia Natural Gas Number of Commercial Consumers (Number of Elements)

    U.S. Energy Information Administration (EIA) Indexed Site

    Commercial Consumers (Number of Elements) Georgia Natural Gas Number of Commercial Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 94 98,809 102,277 106,690 1990's 108,295 109,659 111,423 114,889 117,980 120,122 123,200 123,367 126,050 225,020 2000's 128,275 130,373 128,233 129,867 128,923 128,389 127,843 127,832 126,804 127,347 2010's 124,759 123,454 121,243 126,060 122,573 - = No Data Reported; -- = Not Applicable; NA = Not

  11. Georgia Natural Gas Number of Industrial Consumers (Number of Elements)

    U.S. Energy Information Administration (EIA) Indexed Site

    Industrial Consumers (Number of Elements) Georgia Natural Gas Number of Industrial Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 3 3,034 3,144 3,079 1990's 3,153 3,124 3,186 3,302 3,277 3,261 3,310 3,310 3,262 5,580 2000's 3,294 3,330 3,219 3,326 3,161 3,543 3,053 2,913 2,890 2,254 2010's 2,174 2,184 2,112 2,242 2,481 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual

  12. Georgia Natural Gas Number of Residential Consumers (Number of Elements)

    U.S. Energy Information Administration (EIA) Indexed Site

    Residential Consumers (Number of Elements) Georgia Natural Gas Number of Residential Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 1,190 1,237,201 1,275,128 1,308,972 1990's 1,334,935 1,363,723 1,396,860 1,430,626 1,460,141 1,495,992 1,538,458 1,553,948 1,659,730 1,732,865 2000's 1,680,749 1,737,850 1,735,063 1,747,017 1,752,346 1,773,121 1,726,239 1,793,650 1,791,256 1,744,934 2010's 1,740,587 1,740,006 1,739,543 1,805,425

  13. Georgia Natural Gas Pipeline and Distribution Use (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) Georgia Natural Gas Pipeline and Distribution Use (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 7,973 7,606 8,846 2000's 5,636 7,411 7,979 7,268 6,235 5,708 6,092 5,188 5,986 6,717 2010's 8,473 10,432 10,509 7,973 6,977 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date: 3/31/2016 Referring Pages:

  14. sRecovery Act: Geologic Characterization of the South Georgia Rift Basin for Source Proximal CO2 Storage

    SciTech Connect (OSTI)

    Waddell, Michael

    2014-09-30

    This study focuses on evaluating the feasibility and suitability of using the Jurassic/Triassic (J/TR) sediments of the South Georgia Rift basin (SGR) for CO2 storage in southern South Carolina and southern Georgia The SGR basin in South Carolina (SC), prior to this project, was one of the least understood rift basin along the east coast of the U.S. In the SC part of the basin there was only one well (Norris Lightsey #1) the penetrated into J/TR. Because of the scarcity of data, a scaled approach used to evaluate the feasibility of storing CO2 in the SGR basin. In the SGR basin, 240 km (~149 mi) of 2-D seismic and 2.6 km2 3-D (1 mi2) seismic data was collected, process, and interpreted in SC. In southern Georgia 81.3 km (~50.5 mi) consisting of two 2-D seismic lines were acquired, process, and interpreted. Seismic analysis revealed that the SGR basin in SC has had a very complex structural history resulting the J/TR section being highly faulted. The seismic data is southern Georgia suggest SGR basin has not gone through a complex structural history as the study area in SC. The project drilled one characterization borehole (Rizer # 1) in SC. The Rizer #1 was drilled but due to geologic problems, the project team was only able to drill to 1890 meters (6200 feet) instead of the proposed final depth 2744 meters (9002 feet). The drilling goals outlined in the original scope of work were not met. The project was only able to obtain 18 meters (59 feet) of conventional core and 106 rotary sidewall cores. All the conventional core and sidewall cores were in sandstone. We were unable to core any potential igneous caprock. Petrographic analysis of the conventional core and sidewall cores determined that the average porosity of the sedimentary material was 3.4% and the average permeability was 0.065 millidarcy. Compaction and diagenetic studies of the samples determined there would not be any porosity or permeability at depth in SC. In Georgia there appears to be porosity in the J/TR section based on neutron log porosity values. The only zones in Rizer #1 that appear to be porous were fractured diabase units where saline formation water was flowing into the borehole. Two geocellular models were created for the SC and GA study area. Flow simulation modeling was performed on the SC data set. The injection simulation used the newly acquired basin data as well as the Petrel 3-D geologic model that included geologic structure. Due to the new basin findings as a result of the newly acquired data, during phase two of the modeling the diabase unit was used as reservoir and the sandstone units were used as caprock. Conclusion are: 1) the SGR basin is composed of numerous sub-basins, 2) this study only looked at portions of two sub-basins, 3) in SC, 30 million tonnes of CO2 can be injected into the diabase units if the fracture network is continuous through the units, 4) due to the severity of the faulting there is no way of assuring the injected CO2 will not migrate upward into the overlying Coastal Plain aquifers, 5) in Georgia there appears to porous zones in the J/TR sandstones, 6) as in SC there is faulting in the sub-basin and the seismic suggest the faulting extends upward into the Coastal Plain making that area not suitable for CO2 sequestration, 7) the complex faulting observed at both study areas appear to be associated with transfer fault zones (Heffner 2013), if sub-basins in the Georgia portion of the SGR basin can be located that are far away from the transfer fault zones there is a strong possibility of sequestering CO2 in these areas, and 9) the SGR basin covers area in three states and this project only studied two small areas so there is enormous potential for CO2 sequestration in other portions the basin and further research needs to be done to find these areas.

  15. Cost-Effectiveness of ASHRAE Standard 90.1-2010 for the State of Georgia

    SciTech Connect (OSTI)

    Hart, Philip R.; Rosenberg, Michael I.; Xie, YuLong; Zhang, Jian; Richman, Eric E.; Elliott, Douglas B.; Loper, Susan A.; Myer, Michael

    2013-11-01

    Moving to the ANSI/ASHRAE/IES Standard 90.1-2010 version from the Base Code (90.1-2007) is cost-effective for all building types and climate zones in the State of Georgia.

  16. Wind Powering America: A New Wind Economy for South Carolina and Georgia Final Report

    SciTech Connect (OSTI)

    SC Energy Office: Southern Alliance for Clean Energy

    2013-02-12

    This report describes all activities undertaken by the Southern Alliance for Clean Energy (SACE) in cooperation with the states of Georgia and South Carolina to develop a public outreach program, including shared analytical and reference tools and other technical assistance.

  17. EA-1255: Project Partnership Transportation of Foreign-Owned Enriched Uranium from the Republic of Georgia

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts for the proposal to transport 5.26 kilograms of enriched uranium-23 5 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom.

  18. Microsoft Word - DOE-ID-14-045 Georgia Institute of Tech. ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Description Georgia Tech Research Corporation will develop a novel, high-performance, low-energy intensity, lower-cost zeolite membrane process for KrXe separation during spent...

  19. Georgia County Turning Industrial and Farm Waste Into Big Energy Savings

    Broader source: Energy.gov [DOE]

    Thanks to a Department of Energy Recovery Act grant, Gwinnett County, Georgia is taking some of the grossest stuff on earth and turning it into some of the greenest stuff on earth.

  20. Microsoft Word - DOE-ID-14-002 Georgia Tech EC B3-6.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2 SECTION A. Project Title: Self-Consolidating Concrete Construction for Modular Units - Georgia Institute of Technology SECTION B. Project Description The Georgia Institute of Technology proposes to develop self-consolidating concrete (SCC) mixtures so that concrete placement can be made into steel plate composite modular structures without the need for continuous concrete placement. SCC mixtures will be developed and their use validated to ensure sufficient shear capacity across cold-joints,

  1. Sec. Moniz to Georgia, Energy Department Scheduled to Close on Loan

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Guarantees to Construct New Nuclear Power Plant Reactors | Department of Energy to Georgia, Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors Sec. Moniz to Georgia, Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors February 19, 2014 - 1:30pm Addthis Washington D.C. - Building on President Obama's State of the Union address to Congress and the American public last month, U.S. Secretary of

  2. GEORGIA TECH ENERGY AND SUSTAINABILITY SERVICES (GTESS) ANSI-Accredited Standards Developer

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GEORGIA TECH ENERGY AND SUSTAINABILITY SERVICES (GTESS) ANSI-Accredited Standards Developer Clarification of Intent: SEP energy management standards Administrator: Holly Grell-Lawe (holly.lawe@innovate.gatech.edu) When originating or replying, please respond to the Administrator Updated 28 September 2015 BACKGROUND Georgia Tech Energy and Sustainability Services (GTESS) is an American National Standards Institute (ANSI) accredited standards developer, which developed ANSI/MSE 50021, ANSI/MSE

  3. Liquefied Petroleum Gas (LPG) storage facility study, Fort Gordon, Georgia. Final report

    SciTech Connect (OSTI)

    1992-09-01

    Fort Gordon currently purchases natural gas from Atlanta Gas Light Company under a rate schedule for Large Commercial Interruptible Service. This offers a very favorable rate for `interruptible` gas service, however, Fort Gordon must maintain a base level of `firm gas`, purchased at a significantly higher cost, to assure adequate natural gas supplies during periods of curtailment to support family housing requirements and other single fuel users. It is desirable to provide a standby fuel source to meet the needs of family housing and other single fuel users and eliminate the extra costs for the firm gas commitment to Atlanta Gas Light Company. Therefore, a propane-air standby fuel system is proposed to be installed at Fort Gordon.

  4. Liquefied Petroleum Gas (LPG) storage facility study Fort Gordon, Georgia. Final report

    SciTech Connect (OSTI)

    1992-09-01

    Fort Gordon currently purchases natural gas from Atlanta Gas Light Company under a rate schedule for Large Commercial Interruptible Service. This offers a very favorable rate for `interruptible` gas service, however, Fort Gordon must maintain a base level of `firm gas`, purchased at a significantly higher cost, to assure adequate natural gas supplies during periods of curtailment to support family housing requirements and other single fuel users. It is desirable to provide a standby fuel source to meet the needs of family housing and other single fuel users and eliminate the extra costs for the firm gas commitment to Atlanta Gas Light Company. Therefore, a propane-air standby fuel system is proposed to be installed at Fort Gordon.

  5. Paper Title (use style: paper title)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Interconnection Risk Analysis through Distribution System Impact Signatures and Feeder Zones Matthew J. Reno, Kyle Coogan, Santiago Grijalva School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta, GA, USA Robert J. Broderick, Jimmy E. Quiroz Photovoltaics and Distributed Grid Integration Sandia National Laboratories Albuquerque, NM, USA Abstract- High penetrations of PV on the distribution system can impact the operation of the grid and may require interconnection

  6. Secretary Bodman Announces Federal Risk Insurance for Nuclear Power Plants

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    & Touts Robust Economy | Department of Energy Federal Risk Insurance for Nuclear Power Plants & Touts Robust Economy Secretary Bodman Announces Federal Risk Insurance for Nuclear Power Plants & Touts Robust Economy August 4, 2006 - 8:42am Addthis ATLANTA, GA - After touring Georgia Power and speaking to its employees, U.S. Department of Energy (DOE) Secretary Samuel W. Bodman today announced completion of the final rule that establishes the process for utility companies building

  7. Microsoft Word - EOD final final report.doc

    Office of Scientific and Technical Information (OSTI)

    High Selectivity Oxygen Delignification Recipient: Institute of Paper Science and Technology Georgia Institute of Technology 500 10 th St., NW, Atlanta, GA 30332 Award Number: DE-FC07-00ID13870 Subcontractors: Lucian A. Lucia, North Carolina State University/ Georia Institute of Technology Office: 919-515-7707 ; Email : lucian_lucia@ncsu.edu Hasan Jameel, North Carolina State University College of Forest Resources Raleigh, NC 27695-8005 Office #: 919-515-7739 Email: h_jameel@ncsu.edu Contact:

  8. DE-FE0009897 | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hydrate-Bearing Clayey Sediments: Morphology, Physical Properties, Production and Engineering/Geological Implications Last Reviewed 12/1/2015 DE-FE0009897 Goal The primary goal of this research effort is to contribute to an in-depth understanding of hydrate bearing, fine-grained sediments with a focus on investigation of their potential for hydrate-based gas production. Performer Georgia Tech Research Corporation, Atlanta GA Background Fine-grained sediments host more than 90 percent of global

  9. Race to Zero 2015 Analysis Excellence Award Presentations | Department of

    Energy Savers [EERE]

    Energy Analysis Excellence Award Presentations Race to Zero 2015 Analysis Excellence Award Presentations View the presentations for the 2015 Race to Zero Student Design Competition Analysis Excellence Award winners. HouZe GT - The Zeroes Georgia Institute of Technology, Atlanta, GA The Corner House - [DAS]Haus Ryerson University, Toronto, Ontario, Canada The Serrano House - Negawatt Team University of California, Berkeley, Berkeley, CA The TownHauZ - Invent the Future Virginia Tech,

  10. Georgia Natural Gas Industrial Consumption (Million Cubic Feet)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Consumption (Million Cubic Feet) Georgia Natural Gas Industrial Consumption (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2001 11,025 10,991 12,416 12,284 10,980 10,558 10,974 12,062 11,624 12,533 11,239 11,212 2002 12,320 11,739 13,039 11,629 11,929 11,381 11,441 12,306 11,390 11,650 12,080 12,247 2003 14,903 14,274 13,044 13,382 13,121 11,350 11,925 12,763 12,912 14,159 13,309 14,265 2004 14,458 14,427 13,755 13,178 12,893 12,329 12,563 12,941 12,907

  11. Georgia Natural Gas Industrial Price (Dollars per Thousand Cubic Feet)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Price (Dollars per Thousand Cubic Feet) Georgia Natural Gas Industrial Price (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2001 10.05 9.35 7.56 6.07 5.80 5.01 4.55 4.21 3.78 3.00 4.52 3.39 2002 4.07 3.67 3.48 4.65 6.74 5.02 5.11 4.84 4.98 4.92 5.48 5.74 2003 6.56 7.08 9.43 6.70 6.43 7.31 6.62 5.86 5.85 6.10 6.32 6.54 2004 7.95 7.97 6.88 6.96 7.27 8.03 7.89 7.47 6.69 7.22 9.07 7.20 2005 8.99 8.10 8.90 8.37 8.32 8.01 8.52 8.85 11.71 13.33 13.71 14.78 2006

  12. Georgia Natural Gas Residential Consumption (Million Cubic Feet)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Residential Consumption (Million Cubic Feet) Georgia Natural Gas Residential Consumption (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 1989 15,116 16,389 9,603 7,211 4,629 3,050 2,988 2,792 3,466 5,190 11,110 22,137 1990 16,238 11,794 10,094 6,398 3,781 3,153 2,914 2,900 2,979 5,357 9,115 15,540 1991 18,493 13,332 10,872 5,129 3,781 3,092 2,984 2,965 2,893 4,829 12,479 15,812 1992 19,167 14,531 12,768 7,360 4,718 3,536 3,170 2,981 3,211 5,284 12,934 18,555 1993 17,952

  13. Georgia Price of Natural Gas Delivered to Residential Consumers (Dollars

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    per Thousand Cubic Feet) Delivered to Residential Consumers (Dollars per Thousand Cubic Feet) Georgia Price of Natural Gas Delivered to Residential Consumers (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 1989 5.77 5.81 6.14 6.23 7.03 7.75 7.91 7.97 7.47 7.28 6.40 5.62 1990 6.37 6.81 6.67 6.30 7.31 7.69 8.05 8.13 7.80 7.27 6.99 6.37 1991 6.15 6.43 6.60 7.72 7.87 7.98 8.10 8.24 8.21 7.65 5.98 6.21 1992 6.08 6.51 6.25 6.29 6.96 7.88 8.30 8.38 3.87 7.64

  14. Georgia Natural Gas Pipeline and Distribution Use Price (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Price (Dollars per Thousand Cubic Feet) Georgia Natural Gas Pipeline and Distribution Use Price (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1960's 0.19 0.19 0.19 1970's 0.20 0.22 0.23 0.25 0.28 0.32 0.36 0.67 0.90 1.35 1980's 2.10 2.78 3.11 3.22 3.26 3.23 3.32 2.50 2.41 2.69 1990's 2.19 2.08 2.08 2.24 2.14 1.93 2.62 3.09 2.48 2.18 2000's 3.30 4.57 NA -- -- -- - = No Data Reported; -- = Not Applicable; NA

  15. Ecological investigation of a hazardous waste site, Warner Robins, Georgia

    SciTech Connect (OSTI)

    Wade, M.C. ); Billig, P. )

    1993-01-01

    Zone 1, Robins Air Force Base, Georgia, has been designated a National Priorities List Site by the US Environmental Protection Agency. The Remedial Investigation for Zone 1 recommended a quantitative analysis of ecological risk. To accomplish this task a characterization of the bottomland hardwood forest ecosystem present on the base was required. This ecological characterization included the study of hydrology, aquatic and wildlife biology, and wetlands ecology where potential impacts were in question. In addition, a suitable reference area was studied. The hydrologic investigation consisted primarily of the installation of water level recorders and staff gauges, collection of surface water data, installation of piezometers and collection of groundwater data, and the collection of rainfall data. The aquatic biology investigation centered around the sampling of benthic macroinvertebrate communities, bioassay toxicity tests for surface water and sediment, fish sampling, aquatic macrophyte collection, macrophyte collection, and emergent and free-floating plant collection. The wildlife biology investigation focused on a breeding bird survey. The wetlands ecology investigation comprised the collection of soil and vegetation samples and using the Wetland Evaluation Technique (WET) to assess the functions and values of the wetlands present.

  16. SOLAR '97 CONFERENCE: MANUSCRIPT PREPARATION INSTRUCTIONS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MODELING DISTRIBUTION SYSTEM IMPACTS OF SOLAR VARIABILIY AND INTERCONNECTION LOCATION Matthew J. Reno Sandia National Laboratories Georgia Institute of Technology P.O. Box 5800 MS 1033 Albuquerque, NM 87185 e-mail: matthew.reno@gatech.edu Abraham Ellis and Jimmy Quiroz Sandia National Laboratories P.O. Box 5800 MS 1033 Albuquerque, NM 87185 email: aellis@sandia.gov; jequiro@sandia.gov Santiago Grijalva Georgia Institute of Technology 777 Atlantic Drive NW, VL E284 Atlanta, GA 30332 e-mail:

  17. Sakis Meliopoulos, Georgia Institute of Technology, PSERC webinar, 2/16/2016

    Energy Savers [EERE]

    Protection and Control of Systems with Converter Interfaced Generation Sakis Meliopoulos Georgia Power Distinguished Professor School of Electrical and Computer Engineering Georgia Institute of Technology sakis.m@gatech.edu PSERC Public Webinar February 16, 2016 2:00-3:00 p.m. Eastern Time (11:00-12:00 p.m. Pacific) If you plan to use the phone bridge, use the NEW number: 877-820-7831 (passcode: 965722#). Description: The protection of converter interfaced generation and associated circuits and

  18. New Whole-House Solutions Case Study: Pine Mountain Builders, Pine Mountain, Georgia

    Energy Savers [EERE]

    Pine Mountain Builders began working with Building America research partners IBACOS and Southface Energy Institute in 2005 to design energy-efficient homes for a green community of 140 homes in western Georgia. Their designs have yielded homes with HERS scores as low as 59, electric bills as low as $50 a month (or half the state average), and 30% energy savings compared to homes built to the Georgia state energy code. The thermal envelopes of Pine Mountain's homes are built to be airtight.

  19. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    IL (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK (United States) Battelle Memorial...

  20. Funds Awarded to Historically Black Colleges and Universities...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... Clark Atlanta University (Atlanta, Ga.) - Engineering Accessible Adsorption Sites in Metal Organic Frameworks for CO2 Capture. Metal organic frameworks (MOFs) are a newer class of ...

  1. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Photon Source, Argonne, IL (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK (United...

  2. CX-002603: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    DeKalb County/Metro Atlanta Alternative Fuel ProjectCX(s) Applied: A1, A9Date: 12/10/2009Location(s): Atlanta, GeorgiaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

  3. CX-000340: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    DeKalb County/Metro Atlanta Alternative Fuel ProjectCX(s) Applied: A1, A9Date: 12/10/2009Location(s): Atlanta, GeorgiaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

  4. Building Efficiency Technologies by Tomorrow’s Engineers and Researchers (BETTER) Capstone

    Broader source: Energy.gov [DOE]

    Lead Performer: Georgia Institute of Technology – Atlanta, GAPartners:  -   Alphabet Energy – Hayward, CA  -   Alabama Heat Exchangers, AL  -   Advanced Renewable Energy  -   Emrgy Hydro – Atlanta,...

  5. CEMI Southeast Regional Summit Speakers

    Broader source: Energy.gov [DOE]

    The following are confirmed speakers for the CEMI Southeast Regional Summit, which will be held on July 9, 2015 at the Renaissance Atlanta Midtown Hotel in Atlanta, Georgia

  6. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  7. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  8. Summary of Needs and Opportunities from the 2011 Residential Energy

    Energy Savers [EERE]

    Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011 | Department of Energy Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011 Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011 This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S

  9. EA-1865: Department of Energy Loan Guarantee to Kior, Inc., for Biorefinery Facilities in Georgia, Mississippi, and Texas

    Broader source: Energy.gov [DOE]

    This EA will evaluate the environmental impacts of a proposal to issue a Federal loan guarantee to Kior, Inc., for biorefinery facilities in Georgia, Mississippi, and Texas. This EA is on hold.

  10. Servidyne | Open Energy Information

    Open Energy Info (EERE)

    Georgia Zip: 30339 Sector: Efficiency Product: Atlanta-based energy efficiency and demand response company. Coordinates: 33.748315, -84.391109 Show Map Loading map......

  11. Geoplasma LLC | Open Energy Information

    Open Energy Info (EERE)

    LLC Place: Atlanta, Georgia Zip: 30363 Product: Geoplasma is developing plasma gasification technology. Coordinates: 33.748315, -84.391109 Show Map Loading map......

  12. Ethanol Capital Funding | Open Energy Information

    Open Energy Info (EERE)

    Ethanol Capital Funding Jump to: navigation, search Name: Ethanol Capital Funding Place: Atlanta, Georgia Zip: 30328 Product: Provides funding for ethanol and biodiesel plants....

  13. C2 Biofuels | Open Energy Information

    Open Energy Info (EERE)

    Jump to: navigation, search Name: C2 Biofuels Place: Atlanta, Georgia Product: Ethanol production from cellulose. Coordinates: 33.748315, -84.391109 Show Map Loading...

  14. Ajeetco | Open Energy Information

    Open Energy Info (EERE)

    Ajeetco Jump to: navigation, search Name: Ajeetco Place: Atlanta, Georgia Product: Development of a polycrystalline film for PV. References: Ajeetco1 This article is a stub. You...

  15. NREL: Technology Transfer - NREL Awarded $4.9 Million for Small...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Awarded 4.9 Million for Small Business Voucher Pilot July 9, 2015 During the July 8 Clean Energy Manufacturing Initiative's Southeast Regional Summit in Atlanta, Georgia, the...

  16. Plum Combustion | Open Energy Information

    Open Energy Info (EERE)

    Plum Combustion Place: Atlanta, Georgia Product: Combustion technology, which reduces NOx-emissions. Coordinates: 33.748315, -84.391109 Show Map Loading map......

  17. Alpha Renewable Energy | Open Energy Information

    Open Energy Info (EERE)

    Renewable Energy Jump to: navigation, search Name: Alpha Renewable Energy Place: Atlanta, Georgia Sector: Biomass Product: Manufacturer of biomass wood gas stoves and standalone...

  18. Replacing an Oversized and Underloaded Electric Motor

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Sixth World Energy Engineering Congress, Atlanta, Georgia, December 1, 1983. 2 Jeffrey ... American Council for an Energy Efficient Economy Summer Study on Energy Efficiency in ...

  19. 1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    D., 1971: Electromagnetic Radiation Scattering by Spherical Polydisperse Particles. Mir, p. 298 13 Eleventh ARM Science Team Meeting Proceedings, Atlanta, Georgia, March...

  20. GE Hybrid Power Generation Systems | Open Energy Information

    Open Energy Info (EERE)

    Name: GE Hybrid Power Generation Systems Place: Georgia Zip: Atlanta Product: Focused on fuel cell stack and system development. References: GE Hybrid Power Generation Systems1...

  1. American Process Inc | Open Energy Information

    Open Energy Info (EERE)

    Process Inc Jump to: navigation, search Name: American Process Inc Place: Atlanta, Georgia Zip: 30309 Product: Consulting engineering specialist firm dedicated to energy cost...

  2. MULTIPLE LETTERS Mr. James Speir, Vice President Phosphate Operations

    Office of Legacy Management (LM)

    ... and Site Decommissioning Projects Office of Nuclear Energy 2 Enclosures cc: A. Smith, Superfund Coordinator EPA Region IV, Atlanta, Georgia l-4. Snyder, EPA, Washington, ...

  3. SilvaGas Corporation FERCO Enterprises Inc | Open Energy Information

    Open Energy Info (EERE)

    SilvaGas Corporation FERCO Enterprises Inc Jump to: navigation, search Name: SilvaGas Corporation (FERCO Enterprises, Inc.) Place: Atlanta, Georgia Zip: 30339 Sector: Renewable...

  4. Summary of Needs and Opportunities from the 2011 Residential...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011 Summary of Needs and Opportunities from the 2011...

  5. Navajo Wind Energy | Open Energy Information

    Open Energy Info (EERE)

    Navajo Wind Energy Jump to: navigation, search Name: Navajo Wind Energy Place: Atlanta, Georgia Zip: 30318 Sector: Wind energy Product: Atalanta-based but China-focused wind...

  6. Microsoft Word - DOE-ID-14-044 Georgia Institute of Tech_3 EC B3-6.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4 SECTION A. Project Title: Fundamental Study of Key Issues Related to Advanced S-CO2 Brayton Cycle: Prototypic HX Development and Cavitation - Georgia Institute of Technology SECTION B. Project Description Georgia Institute of Technology will perform research (integrated experimental, numerical and analytical work) that utilizes the existing facilities at the university to address the key scientific and operational issues pertinent to the compact heat exchanger systems and turbo-machinery. The

  7. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  8. Control Center and Data Management Improvements Modernize Bulk Power Operations in Georgia

    Office of Environmental Management (EM)

    Under the American Recovery and Reinvestment Act of 2009, the U.S. Department of Energy and the electricity industry have jointly invested over $7.9 billion in 99 cost- shared Smart Grid Investment Grant projects to modernize the electric grid, strengthen cybersecurity, improve interoperability, and collect an unprecedented level of data on smart grid and customer operations. 1. Summary Georgia System Operations Corporation's (GSOC) Smart Grid Investment Grant (SGIG) project modernized bulk

  9. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's Strategy: "Catch and Subdue" Frozen Bullets Tame Unruly Edge Plasmas in Fusion Experiment Read more about Frozen Bullets Tame Unruly Edge Plasmas in Fusion Experiment General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement Read more about General Atomics (GA) Fusion News: A

  10. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  11. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  12. ,"Georgia Heat Content of Natural Gas Consumed"

    U.S. Energy Information Administration (EIA) Indexed Site

    Consumed" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Heat Content of Natural Gas Consumed",1,"Monthly","12/2015","01/15/2013" ,"Release Date:","02/29/2016" ,"Next Release Date:","03/31/2016" ,"Excel File

  13. ,"Georgia Natural Gas Consumption by End Use"

    U.S. Energy Information Administration (EIA) Indexed Site

    Consumption by End Use" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Consumption by End Use",6,"Monthly","12/2015","1/15/1989" ,"Release Date:","2/29/2016" ,"Next Release Date:","3/31/2016" ,"Excel File

  14. ,"Georgia Natural Gas LNG Storage Net Withdrawals (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    LNG Storage Net Withdrawals (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Net Withdrawals (MMcf)",1,"Annual",2014 ,"Release Date:","2/29/2016" ,"Next Release Date:","3/31/2016" ,"Excel File

  15. ,"Georgia Natural Gas Vehicle Fuel Consumption (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Vehicle Fuel Consumption (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Vehicle Fuel Consumption (MMcf)",1,"Monthly","12/2015" ,"Release Date:","2/29/2016" ,"Next Release Date:","3/31/2016" ,"Excel File

  16. Superfund at work: Hazardous waste cleanup efforts nationwide, Spring 1993 (Powersville site profile, Peach County, Georgia)

    SciTech Connect (OSTI)

    Not Available

    1993-01-01

    The US Environmental Protection Agency (EPA) encountered much more than a municipal landfill at the Powersville site in Peach County, Georgia. Contamination from improperly dumped hazardous wastes and pesticides tainted an old quarry used for household garbage. Chemicals migrating into area ground water threatened local drinking water supplies. To address these issues, EPA's Superfund program designed a cleanup strategy that included: negotiating with the county and chemical companies to contain the hazardous wastes on site underneath a protective cover; investigating reports of drinking water contamination and extending municipal water lines to affected residents; and conducting a tailored community relations program to inform and educate residents about the site.

  17. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  18. CX-001791: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Dekalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project (Atlanta)CX(s) Applied: A1, A7Date: 04/21/2010Location(s): Atlanta, GeorgiaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

  19. Beyond Beginning Balances Presentation

    National Nuclear Security Administration (NNSA)

    Beyond Beginning Balances Peter Dessaules DOE/SO-62 Obligations Accounting Implementation Workshop Obligations Accounting Implementation Workshop January 13, 2004 January 13, 2004 Crowne Crowne Plaza Plaza Ravinia Ravinia Atlanta, Georgia Atlanta, Georgia Beginning Foreign Obligation Beginning Foreign Obligation Balances Balances * Why are they important? - United States Agreements for Cooperation hold Treaty status. - These Agreements require periodic reporting to the foreign countries. -

  20. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  1. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  2. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  3. Implementing Equipment Based Obligations Presentation

    National Nuclear Security Administration (NNSA)

    Implementation Workshop January 13, 2 Obligations Accounting Implementation Workshop January 13, 2004 004 Crowne Crowne Plaza Plaza Ravinia Ravinia Atlanta, GA Atlanta, GA page page 1 1 Implementation of Equipment Based Obligations Mark Laidlow Dominion January 13, 2004 Obligations Accounting Implementation Workshop January 13, 2 Obligations Accounting Implementation Workshop January 13, 2004 004 Crowne Crowne Plaza Plaza Ravinia Ravinia Atlanta, GA Atlanta, GA page page 2 2 Background

  4. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  5. SREL Reprint #3188

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    School of Forestry and Natural Resources, University of Georgia, Athens, GA 30602, USA 2Department of Environmental Health Science, University of Georgia, Athens, GA 30602,...

  6. Georgia Hosts Multi-Agency Waste Isolation Pilot Plant Transportation Exercise

    Broader source: Energy.gov [DOE]

    COVINGTON, Ga. – Emergency personnel throughout the U.S. who respond in the event of a potential accident involving radioactive waste shipments take part in mock training scenarios to help them prepare for an actual incident.

  7. Project Presentations for ITP Peer Review

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    DOE ADVANCED MANUFACTURING OFFICE SMART MANUFACTURING INSTITUTE INDUSTRY DAY WORKSHOP FEBRUARY 25, 2015 FINAL AGENDA Georgia Tech Hotel and Conference Center 800 Spring Street NW Atlanta, GA 30308 7:30 - 9:00 am REGISTRATION AND CONTINENTAL BREAKFAST 9:00 - 9:05 am Welcome Mark Shuart, DOE-AMO 9:05 - 9:30 am Remarks from the DOE Advanced Manufacturing Office Mark Johnson, DOE-AMO 9:30 - 10:15 am Smart Manufacturing Institute: Overview, Goals and Activities Isaac Chan, DOE-AMO 10:15 am - 10:45 pm

  8. Spin-Torque

    Office of Scientific and Technical Information (OSTI)

    Spin-Torque in Systems with Inhomogeneous Magnetization Grant No. DE-FG02-04ER46170 Final Technical Report for 9/1/2004 - 8/31/2009 Andrew Zangwill School of Physics, Georgia Institute of Technology, Atlanta, GA 30332-0430 (Dated: April 22, 2013) I. OVERVIEW The work performed under this grant focused on the phenomenon of spin-transfer torque. This is a quantum mechanical effect whereby the angular momentum of conduction electrons is transferred to the magnetization of ferromagnetic structures.

  9. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  10. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: Biedermann, Laura Butler ; Kaplar, Robert James ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2012-10-01 OSTI Identifier: 1111316 Report Number(s):

  11. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Conference: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: DasGupta, Sandeepan ; Biedermann, Laura Butler ; Kaplar, Robert ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2013-02-01 OSTI Identifier:

  12. Georgia Natural Gas Delivered to Commercial Consumers for the Account of

    Gasoline and Diesel Fuel Update (EIA)

    Others (Million Cubic Feet) Delivered to Commercial Consumers for the Account of Others (Million Cubic Feet) Georgia Natural Gas Delivered to Commercial Consumers for the Account of Others (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 1,067 3,418 5,176 1990's 5,721 6,395 6,389 5,487 4,304 3,663 3,646 6,211 9,078 16,996 2000's 48,726 40,531 38,395 39,611 44,025 42,112 38,204 38,967 41,555 43,845 2010's 49,157 46,512 42,971 46,494

  13. Georgia Heat Content of Natural Gas Deliveries to Consumers (BTU per Cubic

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Foot) Heat Content of Natural Gas Deliveries to Consumers (BTU per Cubic Foot) Georgia Heat Content of Natural Gas Deliveries to Consumers (BTU per Cubic Foot) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 1,014 1,015 1,016 1,015 1,014 1,015 1,016 1,019 1,017 1,016 1,017 1,017 2014 1,018 1,018 1,018 1,018 1,021 1,022 1,023 1,023 1,027 1,026 1,026 1,025 2015 1,025 1,026 1,025 1,026 1,028 1,031 1,030 1,028 1,029 1,028 1,026 1,027 - = No Data Reported; -- = Not Applicable; NA = Not

  14. Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Price All Countries (Dollars per Thousand Cubic Feet) Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's -- 2000's -- 1.92 3.51 5.12 6.47 9.18 7.03 6.79 9.71 3.73 2010's 4.39 4.20 2.78 3.36 4.33 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date: 3/31/2016

  15. Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 3.54 4.07 3.86 3.86 4.14 4.10 2000's -- -- 13.05 12.93 12.91 12.11 2010's 5.17 5.57 14.51 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 2/29/2016 Next Release Date: 3/31/2016 Referring Pages:

  16. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  17. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  18. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  19. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  20. Georgia-Pacific Palatka Plant Uses Thermal Pinch Analysis and Evaluates Water Reduction in Plant-Wide Energy Assessment

    SciTech Connect (OSTI)

    2002-12-01

    This OIT BestPractices Case Study describes the methods and results used in a plant-wide assessment at a Georgia-Pacific paper mill in Palatka, FL. Assessment personnel recommended several projects, which, if implemented, have the potential to save the plant more than 729,000 MMBtu per year and $2.9 million per year. In addition, the plant could reduce water use by 2,100 gallons per minute.

  1. Long-Term Need for New Nuclear Workers The SRS Community Reuse Organization (SRSCRO) Region of Georgia

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Long-Term Need for New Nuclear Workers The SRS Community Reuse Organization (SRSCRO) Region of Georgia and South Carolina has the most unique nuclear industry capabilities in the nation. This region is at the forefront of new nuclear power production, environmental stewardship, innovative technology and national security. In 2009, the SRSCRO commissioned a survey of eight area nuclear employers that concluded nearly 10,000 new workers will be needed in the next decade to support existing

  2. Atlanta Central UESC Pilot Project

    Energy Savers [EERE]

    Upgrade - VFD on Pumps 30,151 14 0 0 3,874 0 Heating System Upgrade - Replace Electric Boiler & Pumps 175,063 192 (6,087) 0 36,272 1,667 DDC Controls & Optimization 9,435 15...

  3. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  4. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  5. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  6. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  7. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  8. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  9. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  10. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  11. Pyrococcus Furiosus Genome Supplementary Data from the Adams Laboratory at the University of Georgia

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Adams, Michael W.W.; Weinberg, Michael V.; Schut, Gerrit J.; Brehm, Scott; Datta, Susmitta; Zhou, J.

    The research in the Adams Laboratory focuses on the physiology of hyperthermophilic organisms with an emphasis on metal-containing enzymes in the hyperthermophilic marine archaeon Pyrococcus furiosus. Three of the many articles from this University of Georgia lab have supplementary materials that are available on the Adams Lab website. All three sets of data are Open Reading Frames (ORFs) used for DNA microarray experiments and the changes in signal intensities. The full citations for the three articles are: 1) Weinberg, M. V., Schut, G. J., Brehm, S., Datta, S. and Adams, M. W. W. (2005) Cold shock of a hyperthermophilic archaeon: Pyrococcus furiosus exhibits multiple responses to a suboptimal growth temperature with a key role for membrane-bound glycoproteins. J Bacteriol. 187, 336-348; 2) Schut, G. J., Brehm, S. D., Datta, S. and Adams, M. W. W. (2003) "Whole genome DNA microarray analysis of a hyperthermophile and an archaeon: Pyrococcus furiosus grown on carbohydrates or peptides" J. Bacteriol. 185, 3935-3947; Schut, G. J., Zhou, J. and Adams, M. W. W. (2001) "DNA microarray analysis of the hyperthermophilic archaeon Pyrococcus furiosus evidence for a new type of sulfur-reducing enzyme" J. Bacteriol. 183, 7027-7036. Note that these articles are copyrighted by the Journal of Bacteriology.

  12. Georgia Natural Gas Price Sold to Electric Power Consumers (Dollars per

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Thousand Cubic Feet) Price Sold to Electric Power Consumers (Dollars per Thousand Cubic Feet) Georgia Natural Gas Price Sold to Electric Power Consumers (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2002 3.16 2.97 3.50 3.86 4.07 3.68 3.40 3.48 3.84 4.47 4.10 5.07 2003 5.56 7.58 7.56 5.87 W 6.28 5.68 5.64 5.24 5.77 5.28 6.66 2004 6.66 5.83 W 6.27 7.03 7.25 6.78 6.10 5.53 6.44 7.46 7.77 2005 7.19 W 7.48 7.75 7.03 7.62 8.56 10.70 15.82 15.24 11.35 15.31

  13. Georgia Price of Natural Gas Sold to Commercial Consumers (Dollars per

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Thousand Cubic Feet) Sold to Commercial Consumers (Dollars per Thousand Cubic Feet) Georgia Price of Natural Gas Sold to Commercial Consumers (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 1989 5.27 5.46 5.53 5.38 5.49 5.55 5.62 5.55 5.49 5.78 5.72 5.29 1990 5.77 6.25 6.01 5.37 5.48 5.45 5.55 5.36 5.47 5.71 6.01 5.71 1991 5.72 5.89 5.88 6.18 5.63 5.39 5.32 5.34 5.49 5.79 5.20 5.61 1992 5.67 5.93 5.70 5.28 5.34 5.53 5.51 5.53 2.76 5.98 6.03 5.62 1993

  14. Health-hazard evaluation report HETA 86-469-2189, James River Corporation, Newnan, Georgia

    SciTech Connect (OSTI)

    Sinks, T.

    1992-03-01

    In response to a request from OSHA, a possible cancer cluster was investigated at the James River Corporation (SIC-2657), Newnan, Georgia. The paperboard packaging facility had been in operation for over 30 years. A retrospective cohort mortality study of 2050 workers employed at the facility between 1957 and 1988 was conducted. As of the study date, 141 workers were deceased, 1705 were alive, and 204 had been lost to follow-up. Overall mortality was similar to that expected as was mortality from diseases of the heart, accidents, and violence. The Standardized Mortality Ratios for all cancers was less than expected. Three workers with bladder cancer and six with kidney cancer were identified. No increased risk of bladder cancer was determined. The risk of kidney cancer was increased. The excess risk was associated with overall duration of employment but was not limited to any single department or work process. The author concludes that workers at the facility had an increased rate of kidney cancer. The author recommends measures to reduce exposures to inks containing pigments made from aromatic amines. Personal protective equipment should not be considered a substitute for adequate engineering controls. Follow-up on the cohort should continue.

  15. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  16. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  17. ,"Georgia Natural Gas Industrial Price (Dollars per Thousand Cubic Feet)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Annual",2015 ,"Release Date:","2/29/2016" ,"Next Release Date:","3/31/2016" ,"Excel File Name:","n3035ga3a.xls" ,"Available from Web Page:","http://tonto.eia.gov/dnav/ng/hist/n3035ga3a.htm" ,"Source:","Energy Information Administration" ,"For Help, Contact:","infoctr@eia.doe.gov" ,,"(202) 586-8800",,,"2/26/2016 2:23:53 PM" "Back to

  18. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  19. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  20. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  1. Structural Model of the Basement in the Central Savannah River Area, South Carolina and Georgia

    SciTech Connect (OSTI)

    Stephenson, D. [Westinghouse Savannah River Company, AIKEN, SC (United States); Stieve, A.

    1992-03-01

    Interpretation of several generations of seismic reflection data and potential field data suggests the presence of several crustal blocks within the basement beneath the Coastal Plain in the Central Savannah River Area (CSRA). The seismic reflection and refraction data include a grid of profiles that capture shallow and deep reflection events and traverse the Savannah River Site and vicinity. Potential field data includes aeromagnetic, ground magnetic surveys, reconnaissance and detailed gravity surveys. Subsurface data from recovered core are used to constrain the model.Interpretation of these data characteristically indicate a southeast dipping basement surface with some minor highs and lows suggesting an erosional pre-Cretaceous unconformity. This surface is interrupted by several basement faults, most of which offset only early Cretaceous sedimentary horizons overlying the erosional surface. The oldest fault is perhaps late Paleozoic because it is truncated at the basement/Coastal Plain interface. This fault is related in timing and mechanism to the underlying Augusta fault. The youngest faults deform Coastal Plain sediments of at least Priabonian age (40-36.6 Ma). One of these young faults is the Pen Branch faults, identified as the southeast dipping master fault for the Triassic Dunbarton basin. All the Cenozoic faults are probably related in time and mechanism to the nearby, well studied Belair fault.The study area thus contains a set of structures evolved from the Alleghanian orogeny through Mesozoic extension to Cenozoic readjustment of the crust. There is a metamorphosed crystalline terrane with several reflector/fault packages, a reactivated Triassic basin, a mafic terrane separating the Dunbarton basin from the large South Georgia basin to the southeast, and an overprint of reverse faults, some reactivated, and some newly formed.

  2. Economic Benefits, Carbon Dioxide (CO2) Emissions Reduction, and Water Conservation Benefits from 1,000 Megawatts (MW) of New Wind Power in Georgia (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2008-06-01

    The U.S. Department of Energy's Wind Powering America Program is committed to educating state-level policy makers and other stakeholders about the economic, CO2 emissions, and water conservation impacts of wind power. This analysis highlights the expected impacts of 1000 MW of wind power in Georgia. We forecast the cumulative economic benefits from 1000 MW of development in Georgia to be $2.1 billion, annual CO2 reductions are estimated at 3.0 million tons, and annual water savings are 1,628 million gallons.

  3. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  4. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  5. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  6. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  7. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  8. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  9. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  10. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  11. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  12. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  13. Transportation of foreign-owned enriched uranium from the Republic of Georgia. Environmental assessment for Project Partnership

    SciTech Connect (OSTI)

    1998-03-31

    The Department of Energy (DOE) Office of Nonproliferation and National Security (NN) has prepared a classified environmental assessment to evaluate the potential environmental impact for the transportation of 5.26 kilograms of enriched uranium-235 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom. The nuclear fuel consists of primarily fresh fuel, but also consists of a small quantity (less than 1 kilogram) of partially-spent fuel. Transportation of the enriched uranium fuel would occur via US Air Force military aircraft under the control of the Defense Department European Command (EUCOM). Actions taken in a sovereign nation (such as the Republic of Georgia and the United Kingdom) are not subject to analysis in the environmental assessment. However, because the action would involve the global commons of the Black Sea and the North Sea, the potential impact to the global commons has been analyzed. Because of the similarities in the two actions, the Project Sapphire Environmental Assessment was used as a basis for assessing the potential impacts of Project Partnership. However, because Project Partnership involves a small quantity of partially-spent fuel, additional analysis was conducted to assess the potential environmental impacts and to consider reasonable alternatives as required by NEPA. The Project Partnership Environmental Assessment found the potential environmental impacts to be well below those from Project Sapphire.

  14. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  15. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  16. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  17. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  18. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  19. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  20. CX-003519: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Southern Pine Based Biorefinery CenterCX(s) Applied: A9, B3.6Date: 08/26/2010Location(s): Atlanta, GeorgiaOffice(s): Energy Efficiency and Renewable Energy, Golden Field Office

  1. Waspa | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: Waspa Place: Atlanta, Georgia Product: Development of methanol based fuel cells. References: Waspa1 This article is a stub. You can help OpenEI by...

  2. Main Title 32pt

    National Nuclear Security Administration (NNSA)

    Department of Energy Draft Notice N 234.X Reporting of Radioactive Sealed Sources Fritz Strydom NAC International NMMSS Users Annual Training Meeting Atlanta, Georgia-May 22-24,...

  3. CX-003302: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Clean Energy Property Rebate Program -AEW Parking Deck Lighting RetrofitCX(s) Applied: B5.1Date: 08/05/2010Location(s): Atlanta, GeorgiaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

  4. CX-009364: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project CX(s) Applied: A1, B5.1 Date: 09/19/2012 Location(s): Georgia Offices(s): National Energy Technology Laboratory

  5. CX-007595: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project CX(s) Applied: A1 Date: 01/26/2012 Location(s): Georgia Offices(s): National Energy Technology Laboratory

  6. CX-007592: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project CX(s) Applied: B5.22 Date: 01/27/2012 Location(s): Georgia Offices(s): National Energy Technology Laboratory

  7. CX-006754: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    Theory, Investigation and Stability of Cathode Electrocatalytic ActivityCX(s) Applied: B3.6Date: 09/13/2011Location(s): Atlanta, GeorgiaOffice(s): Fossil Energy, National Energy Technology Laboratory

  8. Slide 1

    National Nuclear Security Administration (NNSA)

    Training Meeting Atlanta, Georgia-May 22-24, 2007 Sponsored by the U.S. Department of Energy & the U.S. Nuclear Regulatory Commission NM M SS NM M SS NM M SS NM M SS Topics *...

  9. --No Title--

    National Nuclear Security Administration (NNSA)

    Training Meeting Atlanta, Georgia-May 22-24, 2007 Sponsored by the U.S. Department of Energy & the U.S. Nuclear Regulatory Commission NM M SS NM M SS NM M SS NM M SS Topics *...

  10. No Slide Title

    National Nuclear Security Administration (NNSA)

    Training Meeting Atlanta, Georgia-May 22-24, 2007 Sponsored by the U.S. Department of Energy & the U.S. Nuclear Regulatory Commission Regulatory Improvements to The Nuclear...

  11. No Slide Title

    National Nuclear Security Administration (NNSA)

    Training Meeting Atlanta, Georgia-May 22-24, 2007 Sponsored by the U.S. Department of Energy & the U.S. Nuclear Regulatory Commission NM M SS NM M SS NM M SS NM M SS NMMSS...

  12. No Slide Title

    National Nuclear Security Administration (NNSA)

    Training Meeting Atlanta, Georgia-May 22-24, 2007 Sponsored by the U.S. Department of Energy & the U.S. Nuclear Regulatory Commission NM M SS NM M SS NM M SS NM M SS Overview *...

  13. No Slide Title

    National Nuclear Security Administration (NNSA)

    Training Meeting Atlanta, Georgia-May 22-24, 2007 Sponsored by the U.S. Department of Energy & the U.S. Nuclear Regulatory Commission NM M SS NM M SS NM M SS NM M SS Additional...

  14. No Slide Title

    National Nuclear Security Administration (NNSA)

    Training Meeting Atlanta, Georgia-May 22-24, 2007 Sponsored by the U.S. Department of Energy & the U.S. Nuclear Regulatory Commission NM M SS NM M SS NM M SS NM M SS * Source...

  15. 1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... similar oscillations of the surface currents in the 164 168 172 176 180 184 188 192 ... ARM Science Team Meeting Proceedings, Atlanta, Georgia, March 19-23, 2001 5 ocean. ...

  16. SREL Reprint #3172

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    School of Forestry and Natural Resources, University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802,...

  17. SREL Reprint #3120

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1Department of Environmental Health Science, University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802,...

  18. Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum...

    Office of Scientific and Technical Information (OSTI)

    Room-temperature mid-infrared "M"-type GaAsSbInGaAs quantum well lasers on InP substrate Citation Details In-Document Search Title: Room-temperature mid-infrared "M"-type GaAsSb...

  19. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  20. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  1. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  2. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  3. Operating Strategies

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Operating Strategies and Design Recommendations for Mitigating Local Damage Effects in Offshore Turbine Blades Phillip W. Richards phillip@gatech.edu Graduate Research Assistant Daniel Guggenheim School of Aerospace Engineering Atlanta, Georgia, USA D. Todd Griffith dgriffi@sandia.gov Principal Member of the Technical Staff Sandia National Laboratories Albuquerque, New Mexico, USA Dewey H. Hodges dhodges@gatech.edu Professor Daniel Guggenheim School of Aerospace Engineering Atlanta, Georgia, USA

  4. Beginning Foreign Obligation Balances for the Power Reactors Presentation

    National Nuclear Security Administration (NNSA)

    Beginning Foreign Obligation Balances Beginning Foreign Obligation Balances for the Power Reactors for the Power Reactors Michael J. Smith Michael J. Smith NAC International NAC International Obligations Accounting Implementation Workshop Obligations Accounting Implementation Workshop January 13, 2004 January 13, 2004 Crowne Crowne Plaza Plaza Ravinia Ravinia Atlanta, Georgia Atlanta, Georgia Project Purpose Project Purpose * Bridge the gap in foreign obligated (FO) inventory tracking for US

  5. Obligations Notification Cycle and New Obligations Presentation

    National Nuclear Security Administration (NNSA)

    Obligations Notification Cycle and Obligations Notification Cycle and New Obligations New Obligations Bill Benton, DOE/SO-62 Pat Tana, NRC/NSIR Michelle Romano, NAC/NMMSS Obligations Accounting Implementation Workshop Obligations Accounting Implementation Workshop January 13, 2004 January 13, 2004 Crowne Crowne Plaza Plaza Ravinia Ravinia Atlanta, Georgia Atlanta, Georgia Notifications Notifications * There are issues! - Timeliness - Information (or lack thereof) - Other? * DOE Facilities - Bill

  6. CX-001019: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Development of an Autogas Network (Atlanta)CX(s) Applied: A9, B2.5, B3.6, B5.1Date: 03/02/2010Location(s): Atlanta, GeorgiaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

  7. CEMI Southeast Regional Summit Breakout Sessions

    Broader source: Energy.gov [DOE]

    The following breakout sessions will take place at the CEMI Southeast Regional Summit at 3:00 P.M. on July 9, 2015 at the Renaissance Atlanta Midtown Hotel in Atlanta, Georgia. At these breakout...

  8. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  9. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  10. Building America Zero Energy Ready Home Case Study: Imery Group, Proud Green Home, Serenbe GA

    Broader source: Energy.gov [DOE]

    Case study describing the first DOE-certified zero energy ready home in Georgia, featuring 2x6 advanced framed wall, spray foamed walls and attic plus rigid foam and coated OSB.

  11. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  12. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect (OSTI)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  13. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  14. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  15. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  16. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  17. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  18. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. ); Koploy, M.A. )

    1992-01-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  19. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J.; Koploy, M.A.

    1992-08-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  20. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Hfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  1. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  2. Distributed bragg reflector using AIGaN/GaN

    DOE Patents [OSTI]

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  3. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  4. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  5. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  6. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  7. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  8. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect (OSTI)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  9. The design, construction, and monitoring of photovoltaic power system and solar thermal system on the Georgia Institute of Technology Aquatic Center. Volume 1

    SciTech Connect (OSTI)

    Long, R.C.

    1996-12-31

    This is a report on the feasibility study, design, and construction of a PV and solar thermal system for the Georgia Tech Aquatic Center. The topics of the report include a discussion of site selection and system selection, funding, design alternatives, PV module selection, final design, and project costs. Included are appendices describing the solar thermal system, the SAC entrance canopy PV mockup, and the PV feasibility study.

  10. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  11. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  12. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  13. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  14. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  15. Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well

    Office of Scientific and Technical Information (OSTI)

    lasers on InP substrate (Journal Article) | SciTech Connect Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate Citation Details In-Document Search Title: Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate We have demonstrated experimentally the InP-based "M"-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 μm at room temperature by optical pumping. The threshold power density

  16. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  17. Building America Technology Solutions for New and Existing Homes: Ground

    Energy Savers [EERE]

    Source Heat Pump Research, TaC Studios Residence, Atlanta, Georigia (Fact Sheet), | Department of Energy Ground Source Heat Pump Research, TaC Studios Residence, Atlanta, Georigia (Fact Sheet), Building America Technology Solutions for New and Existing Homes: Ground Source Heat Pump Research, TaC Studios Residence, Atlanta, Georigia (Fact Sheet), This case study describes the construction of a new test home in Atlanta, GA, that demonstrates current best practices for the mixed-humid climate,

  18. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  19. SR0005

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Program (EMSP) National Workshop in Atlanta, GA on April 24-27 at the Westin Peachtree Plaza. Hosted by DOE's Office of Environmental Management, Office of Science, Idaho...

  20. app_d

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    31 DOE/EIS-0287 Idaho HLW & FD EIS Document 23, Department of Health & Human Services (Kenneth W. Holt), Atlanta, GA Page 10 of 21 Document 23, Department of Health & Human Services (Kenneth W. Holt), Atlanta, GA Page 11 of 21 - New Information - DOE/EIS-0287 D-32 Appendix D Document 23, Department of Health & Human Services (Kenneth W. Holt), Atlanta, GA Page 12 of 21 Document 23, Department of Health & Human Services (Kenneth W. Holt), Atlanta, GA Page 13 of 21 - New

  1. A high-resolution imaging X-ray crystal spectrometer for intense...

    Office of Scientific and Technical Information (OSTI)

    Conference Resource Relation: Conference: Presented at: 20th Topical Conference on High-Temperature Plasma Diagnostics Conference, Atlanta, GA, United States, Jun 01 - Jun 05, 2014...

  2. System for Calibrating the Energy-Dependent Response of an Elliptical...

    Office of Scientific and Technical Information (OSTI)

    Topical Conference on High Temperature Plasma Diagnostics, Atlanta, GA, United States, Jun 01 - Jun 05, 2014 Research Org: Lawrence Livermore National Laboratory (LLNL),...

  3. Development of a TIM-based, flexible, broadband two-crystal spectromet...

    Office of Scientific and Technical Information (OSTI)

    Presented at: High Temperature Plasma Diagnostics, Atlanta, GA, United States, Jun 01 - Jun 05, 2014 Research Org: Lawrence Livermore National Laboratory (LLNL),...

  4. Coarse-grained Energy Modeling of Rollback/Recovery Mechanisms...

    Office of Scientific and Technical Information (OSTI)

    Resource Type: Conference Resource Relation: Conference: Fault Tolerance for HPC at eXtreme Scale (FTXS) Workshop held June 23-24, 2014 in Atlanta, GA.; Related...

  5. QER- Comment of Stephen Arthur 1

    Broader source: Energy.gov [DOE]

    Good morning, I simply was curious if the Atlanta, GA meeting on Business/Economic Development was still on schedule and going to take place?

  6. 2015 University Turbine Systems Research Workshop

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    University Turbine Systems Research Workshop November 3-5, 2015 Accommodations Georgian Terrace Hotel 659 Peachtree Street, NE Atlanta, GA 30308 The Georgian Terrace Hotel will be...

  7. Benchmarking & Transparency Policy and Program Impact Evaluation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... Therefore, more advanced- and generally more expensive -evaluation methods are included in ... Montgomery County, MD; San Francisco; Cambridge, MA; Chicago; Portland, OR; Atlanta, GA; ...

  8. Autonomous Correction of Sensor Data Applied to Building Technologies...

    Office of Scientific and Technical Information (OSTI)

    DOE Contract Number: DE-AC05-00OR22725 Resource Type: Conference Resource Relation: Conference: Energy Informatics 2012, Atlanta, GA, USA, 20121006, 20121006 Research Org: Oak ...

  9. Industrial Feedstock Flexibility Workshop Results

    SciTech Connect (OSTI)

    Ozokwelu, Dickson; Margolis, Nancy; Justiniano, Mauricio; Monfort, Joe; Brueske, Sabine; Sabouni, Ridah

    2009-08-01

    This report (PDF 649 KB) summarizes the results of the 2009 Industrial Feedstock Flexibility Workshop, which took place in Atlanta, GA on August 19-20, 2009.

  10. Search for: All records | SciTech Connect

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK (United States) Battelle Memorial Institute (United States) Bechtel Hanford Inc. (BHI),...

  11. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Regional Office, Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK (United States) Battelle Memorial Institute (United States) Bechtel...

  12. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK ... We consider the R-axion which has relatively heavy mass in order to complement our ...

  13. Microfabricated Optical Compressive Load Sensors (Conference...

    Office of Scientific and Technical Information (OSTI)

    W-7405-ENG-48 Resource Type: Conference Resource Relation: Conference: Presented at: IEEE Sensors 2007, Atlanta, GA, United States, Oct 28 - Oct 31, 2007 Research Org: Lawrence...

  14. About Us - SRSCRO

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GA and Aiken, SC and is less than three hours drive from Atlanta, Charlotte, the Blue Ridge Mountains and the Atlantic Ocean beaches of Savannah, Charleston, Myrtle Beach...

  15. Microfabricated Optical Compressive Load Sensors (Conference...

    Office of Scientific and Technical Information (OSTI)

    DOE Contract Number: W-7405-ENG-48 Resource Type: Conference Resource Relation: Conference: Presented at: IEEE Sensors 2007, Atlanta, GA, United States, Oct 28 - Oct 31, 2007 ...

  16. A new pre-processing method for scanning X-ray microdiffraction...

    Office of Scientific and Technical Information (OSTI)

    Resource Type: Conference Resource Relation: Conference: 2015 IEEE Biomedical Circuits and Systems Conference (BioCAS);Oct. 22-24, 205;Atlanta, GA Publisher: 2015 IEEE Biomedical ...

  17. SANDIA REPORT

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Matthew J. Reno, Abraham Ellis, Jeff Smith, and Roger Dugan Prepared by Sandia ... of Technology Atlanta, GA, 30332 Jeff Smith and Roger Dugan Electric Power Research ...

  18. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F. Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Sizov, V. S.; Zakgeim, A. L.; Mizerov, M. N.

    2010-06-15

    A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

  19. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.01.2??m due to increased charge carrier's localization

    SciTech Connect (OSTI)

    Kryzhkov, D. I. Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F.; Zvonkov, B. N.; Vikhrova, O. V.

    2014-11-28

    In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2??m) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

  20. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  1. Health assessment for Cedartown Industries, Cedartown, Polk County, Georgia, Region 4. CERCLIS No. GAD95840674. Preliminary report

    SciTech Connect (OSTI)

    Not Available

    1990-01-29

    The Cedartown Industries, Inc. site has been proposed for the National Priorities List (NPL) by the U.S. Environmental Protection Agency (EPA). The 7-acre site is located in Cedartown, Polk County, Georgia, in the northwest part of the State. In 1986, one sediment sample from an on-site impoundment and two soil samples (one background) were collected on-site and analyzed by EPD. Only Extraction Procedure (EP) Toxicity testing was performed on these samples. The test which measures the concentration of leachate generated from the soil showed leachate with lead concentrations up to 720 parts per million (ppm) and cadmium concentrations up to 1.4 ppm. Based on the information reviewed, ATSDR has concluded that the site is of potential public health concern because humans may be exposed to hazardous substances at concentrations that may result in adverse health effects. As noted in the Human Exposure Pathways Section above, human exposure to lead may occur via ingestion of, inhalation of, and dermal contact with surface water, sediments, soils, ground water, air, and food-chain entities.

  2. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  3. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  4. General Atomics (GA) Fusion News: A New Spin on Understanding Plasma

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Confinement | Princeton Plasma Physics Lab General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement

  5. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  6. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  7. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  8. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  9. Optical properties of multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

    SciTech Connect (OSTI)

    Shoji, Yasushi; Akimoto, Katsuhiro; Okada, Yoshitaka

    2012-09-15

    Quantum dot solar cells (QDSCs) comprised of 10 stacked pairs of strain-compensated InGaAs/GaNAs QD structure have been fabricated by atomic hydrogen-assisted molecular beam epitaxy. A homogeneous and high-density QD array structure with improved in-plane ordering and total density of {approx}10{sup 12} cm{sup -2} has been achieved on GaAs (311)B grown at 460 Degree-Sign C after stacking. The external quantum efficiency (EQE) of InGaAs/GaNAs QDSC increases in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. The short-circuit current density measured for QDSC is 17.2 mA/cm{sup 2} compared to 14.8 mA/cm{sup 2} of GaAs reference cell. Further, an increase in EQE due to photocurrent production by 2-step photon absorption has been observed at room temperature though it is still small at around 0.1%.

  10. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  11. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  12. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3??m

    SciTech Connect (OSTI)

    Goldmann, Elias Jahnke, Frank; Paul, Matthias; Kettler, Jan; Jetter, Michael; Michler, Peter; Krause, Florian F.; Mller, Knut; Mehrtens, Thorsten; Rosenauer, Andreas

    2014-10-13

    A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3??m under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 2040?nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1?nm and 5?nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.

  13. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  14. ,"Georgia Natural Gas Price Sold to Electric Power Consumers (Dollars per Thousand Cubic Feet)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Monthly","12/2015" ,"Release Date:","2/29/2016" ,"Next Release Date:","3/31/2016" ,"Excel File Name:","n3045ga3m.xls" ,"Available from Web Page:","http://tonto.eia.gov/dnav/ng/hist/n3045ga3m.htm" ,"Source:","Energy Information Administration" ,"For Help, Contact:","infoctr@eia.doe.gov" ,,"(202) 586-8800",,,"2/26/2016 2:25:12 PM" "Back to

  15. ,"Georgia Natural Gas Price Sold to Electric Power Consumers (Dollars per Thousand Cubic Feet)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Annual",2015 ,"Release Date:","2/29/2016" ,"Next Release Date:","3/31/2016" ,"Excel File Name:","n3045ga3a.xls" ,"Available from Web Page:","http://tonto.eia.gov/dnav/ng/hist/n3045ga3a.htm" ,"Source:","Energy Information Administration" ,"For Help, Contact:","infoctr@eia.doe.gov" ,,"(202) 586-8800",,,"2/26/2016 2:25:12 PM" "Back to

  16. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  17. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  18. Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied

    SciTech Connect (OSTI)

    McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

    2005-08-01

    In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

  19. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  20. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  1. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  2. Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

    SciTech Connect (OSTI)

    Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna

    2014-02-21

    We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

  3. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing; Chen, Weixi; Ding, Ying

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  4. Atlanta Community Leaders' Institute Conference | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    economic development; housing; and health disparities and health issues, especially the combined effects of diabetes, hypertension, and obesity known as metabolic syndrome. Dr. ...

  5. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  6. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  7. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    SciTech Connect (OSTI)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer has the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.

  8. Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths

    SciTech Connect (OSTI)

    Park, Seoung-Hwan; Pak, Y. Eugene; Park, Chang Young; Mishra, Dhaneshwar; Yoo, Seung-Hyun; Cho, Yong-Hee Shim, Mun-Bo; Kim, Sungjin

    2015-05-14

    Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (??GaN/InGaN system is shown to have ?3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light.

  9. A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

    SciTech Connect (OSTI)

    Tsai, Jung-Hui; Lee, Ching-Sung; Lour, Wen-Shiung; Ma, Yung-Chun; Ye, Sheng-Shiun

    2011-05-15

    Excellent characteristics of an InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) are first demonstrated. The insertion of a thin n-GaAs emitter layer between tynneling confinement and base layers effectivelty eliminates the potential spike at base-emitter junction and reduces the collector-emitter offset voltage, while the thin InGaP tunneling confinement layer is employed to reduce the transporting time across emitter region for electrons and maintain the good confinement effect for holes. Experimentally, the studied T-HEBN exhibits a maximum current gain of 285, a relatively low offset voltage of 40 mW, and a current-gain cutoff frequency of 26.4 GHz.

  10. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    zduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigr, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  11. Development & Industrialization of InGaN/GaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Flemish, Lumileds joe.flemish@philips.com Development & Industrialization of InGaN/GaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture 2015 Building Technologies Office Peer Review 2 Project Summary Timeline: Start date: August 1, 2013 Planned end date: July 31, 2015 Key Milestones: 1. Repeatable demonstration of PSS emitter performance within 1.5% of the TFFC counterpart; - met January 2014 2. Demonstration of PSS emitter performance exceeding TFFC counterpart by 2%:

  12. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  13. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  14. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect (OSTI)

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  15. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  16. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore » the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  17. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  18. Radiation resistance of GaAs-GaAlAs vertical cavity surface emitting lasers

    SciTech Connect (OSTI)

    Jabbour, J.; Zazoui, M.; Sun, G.C.; Bourgoin, J.C.; Gilard, O.

    2005-02-15

    The variations of the optical and electrical characteristics of a vertical cavity surface emitting laser based on GaAs quantum wells have been monitored versus irradiation with 1 MeV electrons. The results are understood by the introduction of nonradiative recombination centers in the wells whose characteristics, capture cross section for minority carriers times their introduction rate, can be determined. A similar study performed for proton irradiation shows that the results can be explained in the same way when the introduction rate of the defects is replaced by the proton energy loss into atomic collisions. These results allow us to deduce the equivalence between electron and proton irradiations: A flux of 1 proton cm{sup -2} which loses an energy E{sub nl} (eV) into atomic collisions is equivalent to a fluence of about 9x10{sup -2} E{sub nl} cm{sup -2}, 1 MeV electrons.

  19. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon Mller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jrgen; Glauser, Marlene; Carlin, Jean-Franois; Cosendey, Gatien; Butt, Raphal; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  20. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    SciTech Connect (OSTI)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-26

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are {approx}10% lower than the predicted semi-empirical limit to open circuit voltage for a device having absorbing substrate; the voltages are {approx}17% below that for an Auger-limited device having back surface reflector and two-pass optical design.