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1

Athens, Ohio: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Athens, Ohio: Energy Resources (Redirected from Athens, OH) Jump to: navigation, search Equivalent URI DBpedia Coordinates 39.3292396, -82.1012554 Loading map......

2

Epidemiologic characteristics of pityriasis rosea in Athens Greece  

E-Print Network (OSTI)

of pityriasis rosea in Athens Greece Kyriakos P. Kyriakis,St. Barbara" Athens, Greece. fountou@spark.net.gr Pityriasis

Kyriakis, Kyriakos P; Palamaras, Ioulios; Terzoudi, Sofia; Pagana, Georgia; Emmanuelides, Smaro; Michailides, Charalambos

2006-01-01T23:59:59.000Z

3

Export.gov - Our Staff in Athens  

NLE Websites -- All DOE Office Websites (Extended Search)

Trade Problems Locations Domestic Offices International Offices FAQ Blog Connect Home > Greece > Contact Us > Our Staff in Athens Local Time: Print | E-mail Page Greece Home...

4

Modeling soil quality thresholds to ecosystem recovery at Fort Benning, GA, USA  

SciTech Connect

The objective of this research was to use a simple model of soil carbon (C) and nitrogen (N) dynamics to predict nutrient thresholds to ecosystem recovery on degraded soils at Fort Benning, Georgia, in the southeastern USA. Artillery, wheeled, and tracked vehicle training at military installations can produce soil disturbance and potentially create barren, degraded soils. Ecosystem reclamation is an important component of natural resource management at military installations. Four factors were important to the development of thresholds to recovery of aboveground biomass on degraded soils: (1) initial amounts of aboveground biomass, (2) initial soil C stocks (i.e., soil quality), (3) relative recovery rates of biomass, and (4) soil sand content. Forests and old fields on soils with varying sand content had different predicted thresholds for ecosystem recovery. Soil C stocks at barren sites on Fort Benning were generally below predicted thresholds to 100% recovery of desired future ecosystem conditions defined on the basis of aboveground biomass. Predicted thresholds to ecosystem recovery were less on soils with more than 70% sand content. The lower thresholds for old field and forest recovery on more sandy soils were apparently due to higher relative rates of net soil N mineralization. Calculations with the model indicated that a combination of desired future conditions, initial levels of soil quality (defined by soil C stocks), and the rate of biomass accumulation determine the predicted success of ecosystem recovery on disturbed soils.

Garten Jr, Charles T [ORNL; Ashwood, Tom L [ORNL

2004-12-01T23:59:59.000Z

5

Athens, Ohio: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Athens, Ohio: Energy Resources Athens, Ohio: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 39.3292396°, -82.1012554° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.3292396,"lon":-82.1012554,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

6

Athens Utility Board | Open Energy Information  

Open Energy Info (EERE)

Athens Utility Board Athens Utility Board Place Tennessee Utility Id 947 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Electric Power Rates - Residential Residential General Power Rate - Schedule GSA: Commercial General Power Rate - Schedule GSA: Demand 1000KW-5000KW Commercial General Power Rate - Schedule GSA: Demand 50KW-1000KW Commercial General Power Rate-Schedule GSB Industrial Outdoor Lighting(Part A) Lighting Outdoor Lighting: High Pressure Sodium 1000W Lighting Outdoor Lighting: High Pressure Sodium 100W Lighting

7

Omics for understanding microbial functional dynamics  

E-Print Network (OSTI)

Athens, GA 30602, USA. Argonne National Laboratory, 9700South Cass Avenue, Argonne, IL 60439, USA. Department ofin part by U. Chicago Argonne, LLC, Operator of Argonne

Jansson, J.

2013-01-01T23:59:59.000Z

8

Heat Island Research at the University of Athens  

NLE Websites -- All DOE Office Websites (Extended Search)

Heat Island Research at the University of Athens Heat Island Research at the University of Athens Speaker(s): Mattheos Santamouris Date: June 4, 2008 - 12:00pm Location: 90-3122 Seminar Host/Point of Contact: Hashem Akbari Athens, as many other metropolitan areas, is experiencing a severe summer heat island. We will present measurements of urban canyon heat islands in Athens and discuss the effects on building energy use, urban environment, and air quality. Appropriate heat-island mitigation technologies include use of cool materials for urban surfaces (roofs and pavements) and shade trees. Advances in development of cool roofing and paving materials including traditional cool surfaces (white and light-colored materials), near-infrared cool colored materials, and experimental highly reflecting thermochromic coatings will be discussed. Finally, we will discuss the

9

Athens 1833-1979 : the dynamics of urban growth  

E-Print Network (OSTI)

His thesis deals with the urban development of the city of Athens since its foundation as the capital of the newborn Greek State (1833) , until our days. The study focuses on two particular characteristics that dominate ...

Loukopoulos, Dimitris

1980-01-01T23:59:59.000Z

10

Athens-Clarke County- Green Business Revolving Loan Fund  

Energy.gov (U.S. Department of Energy (DOE))

Athens-Clarke County has created a Green Business Revolving Loan Fund for new or existing businesses. Funding is available for implementing eco-friendly products or services into a business or...

11

Athens County, Ohio ASHRAE 169-2006 Climate Zone | Open Energy...  

Open Energy Info (EERE)

Athens County, Ohio ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Athens County, Ohio ASHRAE Standard ASHRAE 169-2006 Climate Zone Number...

12

The Vertical Stratification of Air Temperature in the Center of Athens  

Science Conference Proceedings (OSTI)

The intraurban temperature variation in the center of Athens, Greece, was investigated in relation to urban geometry. This paper describes two main tasks: 1) Air temperature was recorded in the center of Athens and at the Meteorological Service ...

C. Georgakis; M. Santamouris; G. Kaisarlis

2010-06-01T23:59:59.000Z

13

City of Athens, Alabama (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

Athens Athens Place Alabama Utility Id 944 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Rate Commercial Industrial Rate Industrial Industrial Rate(Over 1000 kw to 5000 kw) Industrial Residential Rate Residential Average Rates Residential: $0.0872/kWh Commercial: $0.0959/kWh Industrial: $0.0818/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=City_of_Athens,_Alabama_(Utility_Company)&oldid=40929

14

Indications of the Urban Heat Island in Athens, Greece  

Science Conference Proceedings (OSTI)

The analysis of air temperature data for a period of 22 years in the meteorological network stations in the greater Athens area shows clearly the effect of the urban heat island due to the city. This effect appears with different intensity ...

B. D. Katsoulis; G. A. Theoharatos

1985-12-01T23:59:59.000Z

15

USA Section  

Science Conference Proceedings (OSTI)

Section is made up of professionals in the USA. USA Section Membership Information achievement application award Awards distinguished division Divisions fats job Join lipid lipids Member member get a member Membership memorial nomination oils post

16

West Athens, California: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Athens, California: Energy Resources Athens, California: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.9233482°, -118.3034071° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.9233482,"lon":-118.3034071,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

17

Intercomparison of Meteorological Models Applied to the Athens Area and the Effect on photochemical Pollutant Predictions  

Science Conference Proceedings (OSTI)

In this study, four different meteorological models, one diagnostic and three prognostic, are used to develop meteorological inputs for a photochemical model, as applied to the peninsula of Athens, Greece. The comparison of meteorological models ...

P. Grossi; J-M. Giovannoni; A. G. Russell

1996-06-01T23:59:59.000Z

18

Trends in Attenuation Coefficients in Athens, Greece, from 1954 to 1991  

Science Conference Proceedings (OSTI)

Unsworth and Monteith's attenuation coefficient TUM was calculated from midday cloudless sky data in Athens, Greece, for the period 1954 to 1991. An interdependence between TUM and the Linke factor TL was found and is expressed as a mathematical ...

C. P. Jacovides; N. A. Kaltsounides; G. P. Giannourakos; G. B. Kallos

1995-06-01T23:59:59.000Z

19

Numerical Simulations of the Meteorological and Dispersion Conditions during an Air Pollution Episode over Athens, Greece  

Science Conference Proceedings (OSTI)

In this study a summer air pollution episode from 6 to 8 August 1994 over Athens, Greece, is investigated through advanced atmospheric modeling. This episode was reported from the air quality monitoring network, as well as from research aircraft ...

V. Kotroni; G. Kallos; K. Lagouvardos; M. Varinou; R. Walko

1999-04-01T23:59:59.000Z

20

VOC and O3 Distributions over the Densely Populated Area of Greater Athens, Greece  

Science Conference Proceedings (OSTI)

The horizontal and vertical distributions of volatile organic compounds (VOCs) and ozone (O3) concentrations within the lower troposphere over the greater Athens area, Greece, under sea-breeze conditions were studied. Furthermore, an attempt was ...

Helena A. Flocas; Vasiliki D. Assimakopoulos; Costas G. Helmis; Hans Gsten

2003-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Per Capita Consumption The NMFS calculation of per capita consumption is  

E-Print Network (OSTI)

351 Bessey Hall, Ames, IA 50011, USA 2 Azerbaijan National Academy of Sciences Patamdar 40, Baku AZ1073, Azerbaijan 3 Southern Research Station, USDA Forest Service Athens, GA 30602, USA Abstract

22

IEEE Energy2030 Atlanta, GA USA  

E-Print Network (OSTI)

of electricity generation from wind power. While the development is still going on, now wind turbine technology Wind turbine generators (WTG) convert wind energy into electrical power. Now large wind turbines of up around 30 to 40 kV. Fig. 2. Single line diagram of HVAC and HVDC interconnection of offshore wind farm

Hansen, René Rydhof

23

IEEE Energy2030 Atlanta, GA USA  

E-Print Network (OSTI)

vehicles. Car manufacturers understand this trend quite well and are developing new models. For the 90 and the average daily time that cars remain parked is 22 hours. A salient feature that these vehicles have into the grid. We focus on the design of a conceptual framework needs to integrate the electric vehicles

Gross, George

24

Associations Between Management Forecast Accuracy and Pricing of IPOs in Athens Stock  

E-Print Network (OSTI)

1 Associations Between Management Forecast Accuracy and Pricing of IPOs in Athens Stock Exchange Dimitrios Gounopoulos* University of Surrey, U.K. This study examines the earnings forecast accuracy earnings forecast and pricing ofIPOs. It uses a unique data set of 208 IPOs, which were floated during

Jensen, Max

25

Effect of Sea Breeze on Air Pollution in the Greater Athens Area. Part I: Numerical Simulations and Field Observations  

Science Conference Proceedings (OSTI)

Numerical simulations compared with field measurements are used to explain the effect of sea breezes on photochemical smog episodes in Athens during the Mediterranean Campaign of Photochemical Tracers on 1214 September 1994. The numerical ...

Alain Clappier; Alberto Martilli; Paola Grossi; Philippe Thunis; Francesco Pasi; Bernd C. Krueger; Bertrand Calpini; Giovanni Graziani; Hubert van den Bergh

2000-04-01T23:59:59.000Z

26

Effect of Sea Breeze on Air Pollution in the Greater Athens Area. Part II: Analysis of Different Emission Scenarios  

Science Conference Proceedings (OSTI)

The Mediterranean Campaign of Photochemical TracersTransport and Chemical Evolution that took place in the greater Athens area from 20 August to 20 September 1994 has confirmed the role of sea-breeze circulation in photochemical smog episodes ...

Paola Grossi; Philippe Thunis; Alberto Martilli; Alain Clappier

2000-04-01T23:59:59.000Z

27

Application of Neural Networks to the Simulation of the Heat Island over Athens, Greece, Using Synoptic Types as a Predictor  

Science Conference Proceedings (OSTI)

The effect of the synoptic-scale atmospheric circulation on the urban heat island phenomenon over Athens, Greece, was investigated and quantified for a period of 2 yr, employing a neural network approach. A neural network model was appropriately ...

Giouli Mihalakakou; Helena A. Flocas; Manthaios Santamouris; Costas G. Helmis

2002-05-01T23:59:59.000Z

28

The Meteorological Model BOLAM at the National Observatory of Athens: Assessment of Two-Year Operational Use  

Science Conference Proceedings (OSTI)

Since November 1999, the hydrostatic meteorological Bologna Limited-Area Model (BOLAM) has been running operationally at the National Observatory of Athens. The assessment of the model forecast skill during the 2-yr period included (a) ...

K. Lagouvardos; V. Kotroni; A. Koussis; H. Feidas; A. Buzzi; P. Malguzzi

2003-11-01T23:59:59.000Z

29

Blood lead levels of traffic- and gasoline-exposed professionals in the city of Athens  

SciTech Connect

During the past 10 y, blood lead levels in the population of Athens, Greece, have decreased steadily. This decrease has paralleled the reduction of tetraethyl lead in gasoline and the introduction of unleaded fuel. Blood lead levels and other parameters were studied in 42 gas-station employees, 47 taxi drivers, 47 bus drivers, and 36 controls, all of whom worked in Athens. The blood lead levels did not differ significantly among the four groups. Glutamic-oxaloacetic transaminase and glutamic-pyruvic transaminase were elevated in gas-station employees, and the former was elevated in taxi drivers. Gas-station employees who smoked had higher blood lead levels than their nonsmoking counterparts. The absence of any difference in the blood lead levels of individuals for whom physical examinations were either normal or abnormal suggests that either lead was not the cause of increased blood lead levels or that its contribution may have been important in the past.

Kapaki, E.N.; Varelas, P.N.; Syrigou, A.I.; Spanaki, M.V.; Andreadou, E.; Kakami, A.E.; Papageorgiou, C.T. [Athens Univ. School of Medicine (Greece). Aeginition Hospital

1998-07-01T23:59:59.000Z

30

Impact of solar activity on climate changes in Athens region, Greece  

E-Print Network (OSTI)

The scope of this work is to study the role that the solar weather plays in terrestrial weather. For this reason we study the effect of the solar activity on the climate changes in Greece. In the current work we look for possible correlation between the solar activity data spanning the years from 1975 to 2000 and the meteorological data from two weather stations based inside the city of Athens, Greece (New Philadelphia) and in greater Athens in the north of Attica (Tatoi area). We examine the annual variations of the average values of six meteorological parameters: temperature, atmospheric pressure, direction and intensity of wind, rainfall and relative air humidity. The solar data include decade variations, within the above period, of the solar irradiance, mean sunspot number between two solar cycles, magnetic cycle influence, and solar UV driving of climate (radio flux).

Gizani, Nectaria A B; Vatikiotis, Leonidas; Zervas, Efthimios

2011-01-01T23:59:59.000Z

31

Ga Air Compressor, Ga Air Compressor Products, Ga Air ...  

U.S. Energy Information Administration (EIA)

Ga Air Compressor, You Can Buy Various High Quality Ga Air Compressor Products from Global Ga Air Compressor Suppliers and Ga Air Compressor ...

32

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures  

E-Print Network (OSTI)

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures, U.S.A. ABSTRACT Characterization of operational AlGaInN heterostructure light emitting diodes (LEDs the device lifetime in a non-destructive mode. INTRODUCTION Group ­ III nitride light emitting diodes (LEDs

Wetzel, Christian M.

33

A Numerical Model for Chemical and Meteorological Processes in the Atmospheric Boundary Layer. Part II: A Case Study of the Air Quality Situation in Athens, Greece  

Science Conference Proceedings (OSTI)

A three-dimensional coupled mesoscale meteorological and photochemical model has been applied to the Athens basin in Greece. The Athens area experiences episodes of very high air pollution levels a few times every year. A severe episode on 25 May ...

Gunilla Svensson

1996-06-01T23:59:59.000Z

34

Orion Registrar, Inc., USA  

NLE Websites -- All DOE Office Websites (Extended Search)

Registrar, Inc., USA Registrar, Inc., USA Certificate of Registration This is to certify the Environmental Management System of: National Renewable Energy Laboratory 15013 Denver West Parkway Golden, Colorado 80401 USA Has been assessed by Orion Registrar and found to be in compliance with the following Environmental Management Standard: ISO 14001:2004 The Environmental Management System is applicable to: Research, Development, Commercialization and Deployment of Renewable Energy and Energy Efficiency Technologies This Scope is Applicable to All Sites The Registration period is from February 18, 2013 to August 23, 2014. This registration is subject to the company maintaining its system to the required standard, and applicable exceptions, which will be monitored by Orion.

35

Energy Harvesting with Piezoelectric Generators in the Athens, Greece Metro Network  

E-Print Network (OSTI)

ABSTRACT: We report here a new approach in human harvesting with piezoelectric generators, for mass energy production. Nanogenerators capable of converting energy from mechanical sources to electricity with high effective efficiency are attractive for many applications, including energy harvesters. For the purpose of massive energy production, the concept of piezo-generators detached from the human body and the idea of viewing population dynamics as mechanical stress sources were tested. Instead of modeling dynamics of traffic states on individuals, we used spatial configurations of traffic states and temporal dynamics in the metro network of Athens. PMS (Piezoelectric Metro Seats) which contain PZT stacks piezoelectric generators considered to be placed in all the EMUs (electric multiple units) of the Athens metro network. The results, either by taking into account the correlation between the amount of passengers and the amount of train departures or considering the frequency of the departures constant, are promising and the energy production can reach the amount of 40 MWh annually. PACS number(s): 77.84.Bw, 44.35.Pt, 77.84.Dy, 89.40.-a, 89.30-g

E. Koorambas; G. Kakavas; G. Lampousis; A. Alambeis; A. Aggelopoulos

2012-01-01T23:59:59.000Z

36

usa | OpenEI  

Open Energy Info (EERE)

usa usa Dataset Summary Description Estimates for each of the 50 states and the entire United States show Source Wind Powering America Date Released February 04th, 2010 (4 years ago) Date Updated April 13th, 2011 (3 years ago) Keywords annual generation installed capacity usa wind Data application/vnd.ms-excel icon Wind potential data (xls, 102.4 KiB) Quality Metrics Level of Review Some Review Comment Temporal and Spatial Coverage Frequency Time Period License License Other or unspecified, see optional comment below Comment Work of the U.S. Federal Government. Rate this dataset Usefulness of the metadata Average vote Your vote Usefulness of the dataset Average vote Your vote Ease of access Average vote Your vote Overall rating Average vote Your vote Comments Login or register to post comments

37

FRONIUS USA LLC | Open Energy Information  

Open Energy Info (EERE)

USA LLC Place Brighton, Michigan 48116 USA, Michigan Sector Solar Product Focused on welding machines and solar inverters. References FRONIUS USA LLC1 LinkedIn Connections...

38

USA Section List  

Science Conference Proceedings (OSTI)

Name AffiliationCity, State, CountryUSA Section2013 Members919 Members as of October 1, 2013, Process Plus LLCCincinnati, OH, USAAbels, JeffreyForeign Trade Service CorpPrinceton Junction, NJ, USAAbou-Nemeh, IbrahimNovus International IncSaint Charles, MO,

39

The synthesis and origin of the pectic polysaccharide rhamnogalacturonan II … insights from nucleotide sugar formation and diversity  

NLE Websites -- All DOE Office Websites (Extended Search)

ARTICLE ARTICLE published: 11 May 2012 doi: 10.3389/fpls.2012.00092 The synthesis and origin of the pectic polysaccharide rhamnogalacturonan II - insights from nucleotide sugar formation and diversity Maor Bar-Peled 1 *, Breeanna R. Urbanowicz 2 and Malcolm A. O'Neill 2 1 Department of Plant Biology, Complex Carbohydrate Research, The University of Georgia, Athens, GA, USA 2 Complex Carbohydrate Research Center, The University of Georgia, Athens, GA, USA Edited by: Seth DeBolt, University of Kentucky, USA Reviewed by: Henrik Scheller, Lawrence Berkeley National Laboratory, USA Jesper Harholt, University of Copenhagen, Denmark *Correspondence: Maor Bar-Peled , Department of Plant Biology, Complex Carbohydrate Research Center, University of Georgia, 315 Riverbend Road, Athens, GA 30602, USA. e-mail: peled@ccrc.uga.edu There is compelling evidence showing that the structurally

40

PNE WIND USA II  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

PNE WIND USA II PNE WIND USA II 1 PNE Wind USA Tribal Energy Partnerships Cherokee & Chilocco Wind Parks Buchholz wind farm, Germany André De Rosa Managing Director Andre.DeRosa@PNEWind.com p. (312) 919-8042 Hot Springs NP M is s i s s i ppi M iss is s i pp i Mis si ss ip p i M ississippi M iss iss ippi M i ss i ss i pp i M is s issippi Missis sip pi M i s s is s ip p i Bonny State Park Bonny State Park Buffalo River State Park Buffalo River State Park Caprock Caprock Canyons Canyons State Park State Park Robbers Cave State Park Robbers Cave State Park Clinton State Park Clinton State Park Hillsdale State Park Hillsdale State Park Indian Cave State Park Indian Cave State Park Lake Murray State Park Lake Murray State Park Lake of Lake of the Ozarks the Ozarks St Park St Park Little River State Park Little River State Park Palo Duro

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Simulation Research Group, LBNL, USA  

NLE Websites -- All DOE Office Websites (Extended Search)

* T. Hong () Simulation Research Group, LBNL, USA e-mail: thong@lbl.gov Building Energy Benchmarking between the United States and China: Methods and Challenges Tianzhen Hong 1,* , Le Yang 2 , Jianjun Xia 2 , Wei Feng 1 1 Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA 2 Tsinghua University, Beijing 100084, China Abstract. Currently, buildings in the U.S. account for more than 40% of total primary energy. In China the

42

ssp062 1000..1014  

NLE Websites -- All DOE Office Websites (Extended Search)

00-1014 00-1014 * September 2009 RESEARCH ARTICLE Arabidopsis thaliana T-DNA Mutants Implicate GAUT Genes in the Biosynthesis of Pectin and Xylan in Cell Walls and Seed Testa Kerry H. Caffall a,b , Sivakumar Pattathil b , Sarah E. Phillips a,b , Michael G. Hahn b,c and Debra Mohnen a,b,1 a Department of Biochemistry and Molecular Biology, University of Georgia, Athens, GA 30602, USA b Complex Carbohydrate Research Center, BioEnergy Science Center, 315 Riverbend Road, University of Georgia, Athens, GA 30602, USA c Department of Plant Biology, University of Georgia, Athens, GA 30602, USA ABSTRACT Galacturonosyltransferase 1 (GAUT1) is an a1,4-D-galacturonosyltransferase that transfers galacturonic acid from uridine 5#-diphosphogalacturonic acid onto the pectic polysaccharide homogalacturonan (Sterling et al., 2006). The 25-member Arabidopsis thaliana GAUT1-related gene family

43

Biochem. J.  

NLE Websites -- All DOE Office Websites (Extended Search)

29, 29, 533-543 (Printed in Great Britain) doi:10.1042/BJ20100238 533 Identification of a novel UDP-sugar pyrophosphorylase with a broad substrate specificity in Trypanosoma cruzi Ting YANG*† and Maor BAR-PELED†‡ 1 *Department of Biochemistry and Molecular Biology, University of Georgia, Athens, GA 30602, U.S.A., †Complex Carbohydrate Research Center (CCRC), University of Georgia, Athens, GA 30602, U.S.A., and ‡Department of Plant Biology, University of Georgia, Athens, GA 30602, U.S.A. The diverse types of glycoconjugates synthesized by trypanoso- matid parasites are unique compared with the host cells. These glycans are required for the parasite survival, invasion or evasion of the host immune system. Synthesis of those glycoconjugates requires a constant supply of nucleotide-sugars (NDP-sugars), yet little is known about how these NDP-sugars are made

44

Sharp Electronics Corporation USA | Open Energy Information  

Open Energy Info (EERE)

USA USA Jump to: navigation, search Name Sharp Electronics Corporation (USA) Place Huntington Beach, California Zip 92647 Product North American division of Japanese electronics company References Sharp Electronics Corporation (USA)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Sharp Electronics Corporation (USA) is a company located in Huntington Beach, California . References ↑ "Sharp Electronics Corporation (USA)" Retrieved from "http://en.openei.org/w/index.php?title=Sharp_Electronics_Corporation_USA&oldid=350899" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version

45

Alternative Fuels Data Center: Clean Construction USA  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Construction USA Construction USA to someone by E-mail Share Alternative Fuels Data Center: Clean Construction USA on Facebook Tweet about Alternative Fuels Data Center: Clean Construction USA on Twitter Bookmark Alternative Fuels Data Center: Clean Construction USA on Google Bookmark Alternative Fuels Data Center: Clean Construction USA on Delicious Rank Alternative Fuels Data Center: Clean Construction USA on Digg Find More places to share Alternative Fuels Data Center: Clean Construction USA on AddThis.com... More in this section... Federal State Advanced Search All Laws & Incentives Sorted by Type Clean Construction USA Clean Construction USA is a voluntary program that promotes the reduction of diesel exhaust emissions from construction equipment and vehicles by encouraging proper operations and maintenance, use of emissions-reducing

46

Alternative Fuels Data Center: Clean Agriculture USA  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Clean Agriculture USA Clean Agriculture USA to someone by E-mail Share Alternative Fuels Data Center: Clean Agriculture USA on Facebook Tweet about Alternative Fuels Data Center: Clean Agriculture USA on Twitter Bookmark Alternative Fuels Data Center: Clean Agriculture USA on Google Bookmark Alternative Fuels Data Center: Clean Agriculture USA on Delicious Rank Alternative Fuels Data Center: Clean Agriculture USA on Digg Find More places to share Alternative Fuels Data Center: Clean Agriculture USA on AddThis.com... More in this section... Federal State Advanced Search All Laws & Incentives Sorted by Type Clean Agriculture USA Clean Agriculture USA is a voluntary program that promotes the reduction of diesel exhaust emissions from agricultural equipment and vehicles by encouraging proper operations and maintenance by farmers, ranchers, and

47

Alternative Fuels Data Center: Clean Ports USA  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Ports USA to Ports USA to someone by E-mail Share Alternative Fuels Data Center: Clean Ports USA on Facebook Tweet about Alternative Fuels Data Center: Clean Ports USA on Twitter Bookmark Alternative Fuels Data Center: Clean Ports USA on Google Bookmark Alternative Fuels Data Center: Clean Ports USA on Delicious Rank Alternative Fuels Data Center: Clean Ports USA on Digg Find More places to share Alternative Fuels Data Center: Clean Ports USA on AddThis.com... More in this section... Federal State Advanced Search All Laws & Incentives Sorted by Type Clean Ports USA Clean Ports USA is an incentive-based program designed to reduce emissions by encouraging port authorities and terminal operators to retrofit and replace older diesel engines with new technologies and use cleaner fuels.

48

De'Longhi USA, Inc.  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

De'Longhi USA, Inc. De'Longhi USA, Inc. (Dehumidifiers) BEFORE THE U.S. DEPARTMENT OF ENERGY Washington, D.C. 20585 ) 1 ) Case Number: 20 10-CE-2114 ) ) NOTICE OF PROPOSED CIVIL PENALTY Date issued: September 8,2010 Number of alleged violations: 13 Maximum possible assessment: $741,820 Proposed civil penalty: $94,900 The Office of the General Counsel of the U.S. Department of Energy (DOE) alleges that De'Longhi USA, Inc. (DeyLonghi) violated certain provisions of the Energy Policy and Conservation Act, 42 U.S.C. $ 6201 et seq., 10 C.F.R. Part 430, or both. Specifically, DOE alleges: 1. DeyLonghi manufactures or privately labels a variety of dehumidifiers, including, models DD40P, DD45, DD45P, DDSOP, DE400, DE400P, DE500, DESOOP, DE650P, DENSOOP, DG50, and DW30M.

49

China Ga Air Compressor, China Ga Air Compressor Products ...  

U.S. Energy Information Administration (EIA)

China Ga Air Compressor, China Ga Air Compressor Suppliers and Manufacturers Directory - Source a Large Selection of Ga Air Compressor Products at ...

50

AREA USA LLC | Open Energy Information  

Open Energy Info (EERE)

AREA USA LLC Jump to: navigation, search Name AREA USA LLC Place Washington, DC Zip 20004 Sector Services Product Washington, D.C.-based division of Fabiani & Company providing...

51

Hisense USA: Order (2010-CE-1211)  

Energy.gov (U.S. Department of Energy (DOE))

DOE issued an Order after entering into a Compromise Agreement with Hisense USA Corp. after finding Hisense USA had failed to certify that certain models of residential refrigerators, refrigerator-freezers, and freezers comply with the applicable energy conservation standards.

52

SelectUSA 2013 Investment Summit  

Science Conference Proceedings (OSTI)

... Gaithersburg, MD 20899-4800. susa-summit-vertical. SelectUSA 2013 Investment Summit. October 31- November 1, 2013 ...

2013-08-16T23:59:59.000Z

53

Improved genome annotation for Zymomonas mobilis  

NLE Websites -- All DOE Office Websites (Extended Search)

USA. 3 Department of Genetics & Biotechnology, University of Athens, Athens, Greece. 4 Chemical Sciences Division and 5 Computer Science and Mathematics Division, Oak...

54

Solar Millennium LLC USA | Open Energy Information  

Open Energy Info (EERE)

LLC (USA) Place Berkeley, California Sector Solar Product California-based STEG power plant developer, parabolic trough maker and subsidiary of Solar Trust of America....

55

Scheuten Solar USA Inc | Open Energy Information  

Open Energy Info (EERE)

Place Rancho Santa Margarita, California Zip 92688 Sector Solar Product Manufacturer of Solar PV systems References Scheuten Solar USA, Inc.1 LinkedIn Connections CrunchBase...

56

Worldwide Energy and Manufacturing USA Inc formerly Worldwide Manufacturing  

Open Energy Info (EERE)

Manufacturing USA Inc formerly Worldwide Manufacturing Manufacturing USA Inc formerly Worldwide Manufacturing USA Jump to: navigation, search Name Worldwide Energy and Manufacturing USA Inc (formerly Worldwide Manufacturing USA) Place San Bruno, California Zip 94066 Product Worldwide Manufacturing USA is an engineering company based in San Bruno, California. References Worldwide Energy and Manufacturing USA Inc (formerly Worldwide Manufacturing USA)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Worldwide Energy and Manufacturing USA Inc (formerly Worldwide Manufacturing USA) is a company located in San Bruno, California . References ↑ "Worldwide Energy and Manufacturing USA Inc (formerly Worldwide Manufacturing USA)"

57

Ba-Ga (Barium - Gallium)  

Science Conference Proceedings (OSTI)

Ba-Ga crystallographic data...Ba-Ga crystallographic data Phase Composition, wt% Ga Pearson symbol Space group (Ba) 0 cI 2 Im m Ba 10 Ga 4.8 cF 176 Fd m Ba 8 Ga 7 30.8 cP 60 P 2 1 3 BaGa 2 50.4 hP 3 P 6/ mmm BaGa 4 67 tI 10 I 4/ mmm (Ga) 100 hP 2 P 6 3 / mmc...

58

NPP Grassland: Dickinson, U.S.A.  

NLE Websites -- All DOE Office Websites (Extended Search)

Dickinson, U.S.A., 1970 Dickinson, U.S.A., 1970 [PHOTOGRAPH] Photograph: Washing root samples at the Dickinson site (click on the photo to view a series of images from this site). Data Citation Cite this data set as follows: Whitman, W., and W. K. Lauenroth. 1998. NPP Grassland: Dickinson, U.S.A., 1970. Data set. Available on-line [http://www.daac.ornl.gov] from Oak Ridge National Laboratory Distributed Active Archive Center, Oak Ridge, Tennessee, U.S.A. Description Productivity of a northern mixed prairie grassland was monitored at the Dickinson study site during 1970. Dynamics of above-ground plant biomass were monitored at roughly 2-week intervals during the growing season. Data on above-ground live biomass, standing dead matter and litter are available, for two replications of a grazed and an "ungrazed" (relatively

59

USA oilgas production cost : recent changes  

E-Print Network (OSTI)

During 1984-1989, oil development investment cost in the USA fell, but only because of lower activity. The whole cost curve shifted unfavorably (leftward). In contrast, natural gas cost substantially decreased, the curve ...

Adelman, Morris Albert

1991-01-01T23:59:59.000Z

60

Geo processors USA | Open Energy Information  

Open Energy Info (EERE)

Carbon Product California based Geo-procesors USA has developed an inovative carbon carbon capture and storage technology that removes CO2 from ambient air or point-source...

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Alternative Fuels Data Center: Clean School Bus USA  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

School Bus USA School Bus USA to someone by E-mail Share Alternative Fuels Data Center: Clean School Bus USA on Facebook Tweet about Alternative Fuels Data Center: Clean School Bus USA on Twitter Bookmark Alternative Fuels Data Center: Clean School Bus USA on Google Bookmark Alternative Fuels Data Center: Clean School Bus USA on Delicious Rank Alternative Fuels Data Center: Clean School Bus USA on Digg Find More places to share Alternative Fuels Data Center: Clean School Bus USA on AddThis.com... More in this section... Federal State Advanced Search All Laws & Incentives Sorted by Type Clean School Bus USA Clean School Bus USA is a public-private partnership that focuses on reducing children's exposure to harmful diesel exhaust by limiting school bus idling, implementing pollution reduction technologies, improving route

62

copyright 2004 by Elsevier Science (USA) All Rights Reserved copyright 2004 by Elsevier Science (USA) All Rights Reserved  

E-Print Network (OSTI)

by Elsevier Science (USA) All Rights Reserved ove ber 200 J. E. Smitha nd Ra vi Na ir E r t r m irta a hin rcopyright 2004 by Elsevier Science (USA) All Rights Reserved copyright 2004 by Elsevier Science (USA) All Rights Reserved copyright 2004 by Elsevier Science (USA) All Rights Reserved copyright 2004

Spruth, Wilhelm G.

63

Ga-Zr (Gallium - Zirconium)  

Science Conference Proceedings (OSTI)

Ga-Zr crystallographic data...Ga 5 Zr 3 44.0 oC 32 Cmcm Ga 3 Zr 2 47 oF 40 Fdd 2 βGaZr 56.7 ? ? αGaZr 56.7 tI 16 I 4 1 / amd Ga 4 Zr 5 62.1 hP 18 P 6 3 / mcm Ga 2 Zr 3 66 tP 10 P 4/ mbm Ga 3 Zr 5 68.6 hP 16 P 6 3 / mcm GaZr 2 72.4 tI 12 I 4/ mcm (βZr) ~94 to 100 cI 2 Im m (αZr) 99.4 to 100 hP 2 P 6 3 / mmc...

64

Space Storm Measurements of 17 and 21 April 2002 Forbush Effects from Artemis-IV Solar Radio-Spectrograph, Athens Neutron Monitor Station and Coronas-F Satellite  

E-Print Network (OSTI)

In this report we present two complex eruptive solar events and the associated Cosmic Ray effects (Forbush decrease). We use combined recordings from a number of Earthbound Receivers, Space Experiments and data archives (such as the ARTEMIS-IV Radio spectrograph, the Athens NEUTRON MONITOR, the LASCO CME Lists, the SONG of the {CORONAS-F} satellite, etc.). The influence of solar transients on the interplanetary medium conditions and the cosmic ray flux is analysed and discussed. The observed time sequence of events of this time period indicates that the initiation of CMEs is closely related to the appearance of type II and IV radio bursts and strong solar flares. Their effects extend from the lower corona to the near Earth vicinity affecting Cosmic Ray measurements and space weather. As regards the Forbush decrease our data indicate significant amplification at the presence of a MHD shock.

Caroubalos, C; Preka-Papadema, P; Hillaris, A; Polygiannakis, I; Mavromichalaki, H; Sarlanis, C; Souvatzoglou, G; Gerontidou, M; Plainaki, C; Tatsis, S; Kuznetsov, S N; Myagkova, I N; Kudela, K

2010-01-01T23:59:59.000Z

65

NATIONAL GEODATABASE OF TIDAL STREAM POWER RESOURCE IN USA  

Science Conference Proceedings (OSTI)

A geodatabase of tidal constituents is developed to present the regional assessment of tidal stream power resource in the USA. Tidal currents are numerically modeled with the Regional Ocean Modeling System (ROMS) and calibrated with the available measurements of tidal current speeds and water level surfaces. The performance of the numerical model in predicting the tidal currents and water levels is assessed by an independent validation. The geodatabase is published on a public domain via a spatial database engine with interactive tools to select, query and download the data. Regions with the maximum average kinetic power density exceeding 500 W/m2 (corresponding to a current speed of ~1 m/s), total surface area larger than 0.5 km2 and depth greater than 5 m are defined as hotspots and documented. The regional assessment indicates that the state of Alaska (AK) has the largest number of locations with considerably high kinetic power density, followed by, Maine (ME), Washington (WA), Oregon (OR), California (CA), New Hampshire (NH), Massachusetts (MA), New York (NY), New Jersey (NJ), North and South Carolina (NC, SC), Georgia (GA), and Florida (FL).

Smith, Brennan T [ORNL; Neary, Vincent S [ORNL; Stewart, Kevin M [ORNL

2012-01-01T23:59:59.000Z

66

Coaltec Energy USA Inc | Open Energy Information  

Open Energy Info (EERE)

Coaltec Energy USA Inc Coaltec Energy USA Inc Jump to: navigation, search Name Coaltec Energy USA, Inc. Place Carterville, Illinois Zip 62918 Sector Biomass Product Coaltec Energy provides energy systems for businesses that have large quantities of waste, biomass, or other fuel source available. Coordinates 37.149025°, -94.433657° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.149025,"lon":-94.433657,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

67

OTB USA Inc | Open Energy Information  

Open Energy Info (EERE)

OTB USA Inc OTB USA Inc Jump to: navigation, search Name OTB USA Inc Address 1871 Suffolk Rd. Place Columbus, Ohio Zip 43221 Sector Solar Product Other:Capital Equipment Phone number 614-481-6701 Website http://www.otb-solar.com Coordinates 40.002562°, -83.0592999° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.002562,"lon":-83.0592999,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

68

Solar Systems USA | Open Energy Information  

Open Energy Info (EERE)

USA USA Jump to: navigation, search 200px Name Solar Systems USA Place Atlanta, Georgia Sector Renewable Energy Product Solar Panels Year founded 2010 Website http://solarsystemsusa.net Coordinates 33.7489954°, -84.3879824° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.7489954,"lon":-84.3879824,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

69

AlGaN/GaN-based power semiconductor switches  

E-Print Network (OSTI)

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

70

DuraLamp USA: Order (2010-CE-0912)  

Energy.gov (U.S. Department of Energy (DOE))

DOE ordered DuraLamp USA, Inc. to pay a $2,500 civil penalty after finding DuraLamp USA had failed to certify that model PAR 30, an incandescent reflector lamp, complies with the applicable energy conservation standards.

71

Ultra Soy of America DBA USA Biofuels | Open Energy Information  

Open Energy Info (EERE)

Ultra Soy of America DBA USA Biofuels Jump to: navigation, search Name Ultra Soy of America (DBA USA Biofuels) Place Fort Wayne, Indiana Zip 46898 Sector Biofuels Product An...

72

Polarization-engineered GaN/InGaN/GaN tunnel diodes  

E-Print Network (OSTI)

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

2010-08-24T23:59:59.000Z

73

PNE Wind USA Inc | Open Energy Information  

Open Energy Info (EERE)

Wind USA Inc Wind USA Inc Place Chicago, Illinois Zip 60601 Sector Wind energy Product Chicago-based subsidiary of wind farm project developer, PNE Wind. Coordinates 41.88415°, -87.632409° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.88415,"lon":-87.632409,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

74

Meridian Energy USA | Open Energy Information  

Open Energy Info (EERE)

Logo: Meridian Energy USA Name Meridian Energy USA Address 6200 Stoneridge Mall Road, Suite 300 Place Pleasanton, California Zip 94588 Sector Solar Product PV power developer Website http://meridianenergyusa.com/ Coordinates 37.696133°, -121.92419° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.696133,"lon":-121.92419,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

75

Gamesa Energy USA | Open Energy Information  

Open Energy Info (EERE)

Name Gamesa Energy USA Name Gamesa Energy USA Place Philadelphia, Pennsylvania Zip 19103 Sector Wind energy Product US subsidiary of Spanish wind project development and turbine manufacturing company Gamesa. Coordinates 39.95227°, -75.162369° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.95227,"lon":-75.162369,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

76

Solar Unlimited USA | Open Energy Information  

Open Energy Info (EERE)

Logo: Solar Unlimited USA Name Solar Unlimited USA Address 2353 Park Ave. Place Cedar City, Utah Zip 84721 Sector Solar Product Solar energy systems Year founded 1998 Phone number 435-867-9876 Website http://solarunlimited.net/ Coordinates 37.6944762°, -113.0937928° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.6944762,"lon":-113.0937928,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

77

FRV USA formerly Fotowatio Renewable Ventures LLC | Open Energy Information  

Open Energy Info (EERE)

FRV USA formerly Fotowatio Renewable Ventures LLC FRV USA formerly Fotowatio Renewable Ventures LLC Jump to: navigation, search Name FRV USA (formerly Fotowatio Renewable Ventures LLC) Place San Francisco, California Zip 94104 Sector Renewable Energy Product A wholly-owned subsidiary of FRV which manages and operates renewable energy assets in the US. References FRV USA (formerly Fotowatio Renewable Ventures LLC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. FRV USA (formerly Fotowatio Renewable Ventures LLC) is a company located in San Francisco, California . References ↑ "FRV USA (formerly Fotowatio Renewable Ventures LLC)" Retrieved from "http://en.openei.org/w/index.php?title=FRV_USA_formerly_Fotowatio_Renewable_Ventures_LLC&oldid=345517"

78

Ormat Technologies Inc. North Brawley, California USA | Open Energy  

Open Energy Info (EERE)

Ormat Technologies Inc. North Brawley, California USA Ormat Technologies Inc. North Brawley, California USA Jump to: navigation, search OpenEI Reference LibraryAdd to library Web Site: Ormat Technologies Inc. North Brawley, California USA Authors Ormat Technologies and Inc. Published Publisher Not Provided, Date Not Provided DOI Not Provided Check for DOI availability: http://crossref.org Online Internet link for Ormat Technologies Inc. North Brawley, California USA Citation Ormat Technologies, Inc.. Ormat Technologies Inc. North Brawley, California USA [Internet]. [updated 2013;cited 2013]. Available from: http://www.ormat.com/case-studies/north-brawley-california-usa Retrieved from "http://en.openei.org/w/index.php?title=Ormat_Technologies_Inc._North_Brawley,_California_USA&oldid=682480" Categories:

79

22nd European Photovoltaic Solar Energy Conference, Milan, 3-7 September 2007 Cu(InGa)Se2 THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

22nd European Photovoltaic Solar Energy Conference, Milan, 3-7 September 2007 Cu(InGa)Se2 THIN-FILM SOLAR CELLS: COMPARATIVE LIFE-CYCLE ANALYSIS OF BUFFER LAYERS Vasilis M. Fthenakis and Hyung Chul Kim National Photovoltaic EH&S Research Center Brookhaven National Laboratory Upton, NY 11973, USA ABSTRACT

80

Energy Optimizers USA | Open Energy Information  

Open Energy Info (EERE)

Optimizers USA Optimizers USA Jump to: navigation, search Name Energy Optimizers USA Address 6 S. 3rd Street Place Tipp City, Ohio Zip 45371 Sector Biomass, Carbon, Geothermal energy, Services, Solar, Wind energy Product Business and legal services;Consulting;Energy audits/weatherization; Engineering/architectural/design;Installation;Investment/finances; Trainining and education Phone number 937-877-1919 Website http://www.energyoptimizersusa Coordinates 39.9610217°, -84.1712945° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.9610217,"lon":-84.1712945,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

82

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

83

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

84

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name GA-SNC Solar Place Nevada Sector Solar Product Nevada-based PV project developer and joint venture of GA-Solar North America and...

85

Hisense USA: Proposed Penalty (2010-CE-1211) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Hisense USA: Proposed Penalty (2010-CE-1211) Hisense USA: Proposed Penalty (2010-CE-1211) Hisense USA: Proposed Penalty (2010-CE-1211) September 8, 2010 DOE alleged in a Notice of Proposed Civil Penalty that Hisense USA Corp. failed to certify a variety of residential refrigerators, refrigerator-freezers, and freezers as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Hisense USA: Proposed Penalty (2010-CE-1211) More Documents & Publications Hisense USA: Order (2010-CE-1211)

86

LES' URENCO-USA Facility | Department of Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

Enriched Uranium Agreement Between the USA and the Russian Federation has on the Domestic Uranium Mining, Conversion, and Enrichment Industries and the Ops of the Gaseous Diffusion...

87

Lessons Learned from the Decommissioning of Nuclear Facilities and the Safe Termination of Nuclear Activities. Outcomes of the International Conference, 11-15 December 2006, Athens, Greece  

Science Conference Proceedings (OSTI)

Full text of publication follows: decommissioning activities are increasing worldwide covering wide range of facilities - from nuclear power plant, through fuel cycle facilities to small laboratories. The importance of these activities is growing with the recognition of the need for ensuring safe termination of practices and reuse of sites for various purposes, including the development of new nuclear facilities. Decommissioning has been undertaken for more than forty years and significant knowledge has been accumulated and lessons have been learned. However the number of countries encountering decommissioning for the first time is increasing with the end of the lifetime of the facilities around the world, in particular in countries with small nuclear programmes (e.g. one research reactor) and limited human and financial resources. In order to facilitate the exchange of lessons learned and good practices between all Member States and to facilitate and improve safety of the planned, ongoing and future decommissioning projects, the IAEA in cooperation with the Nuclear Energy Agency to OECD, European Commission and World Nuclear Association organised the international conference on Lessons Learned from the Decommissioning of Nuclear Facilities and the Safe Termination of Nuclear Activities, held in Athens, Greece. The conference also highlighted areas where future cooperation at national and international level is required in order to improve decommissioning planning and safety during decommissioning and to facilitate decommissioning by selecting appropriate strategies and technologies for decontamination, dismantling and management of waste. These and other aspects discussed at the conference are presented in this paper, together with the planned IAEA measures for amendment and implementation of the International Action Plan on Decommissioning of Nuclear Facilities and its future programme on decommissioning.

Batandjieva, B.; Laraia, M. [International Atomic Energy Agency, Vienna (Austria)

2008-01-15T23:59:59.000Z

88

ssp068 1040..1050  

NLE Websites -- All DOE Office Websites (Extended Search)

40-1050 40-1050 * September 2009 RESEARCH ARTICLE Two Poplar Glycosyltransferase Genes, PdGATL1.1 and PdGATL1.2, Are Functional Orthologs to PARVUS/AtGATL1 in Arabidopsis Yingzhen Kong a,b,2 , Gongke Zhou a,b,2,3 , Utku Avci a,b , Xiaogang Gu a , Chelsea Jones a , Yanbin Yin b,c , Ying Xu b,c and Michael G. Hahn a,b,1 a Complex Carbohydrate Research Center, The University of Georgia, 315 Riverbend Road, Athens, GA 30602, USA b BioEnergy Science Center, The University of Georgia, 315 Riverbend Road, Athens, GA 30602, USA c Computational System Biology Lab, Dept. of Biochemistry and Molecular Biology, and Institute of Bioinformatics, The University of Georgia, Athens, GA 30602, USA ABSTRACT Several genes in Arabidopsis, including PARVUS/AtGATL1, have been implicated in xylan synthesis. However, the biosynthesis of xylan in woody plants, where this polysaccharide is a major component

89

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures  

Science Conference Proceedings (OSTI)

The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition of GaAs of the same nominal thickness leads to the formation of pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed GaAs/GaP self-assembled quantum dots (SAQDs), or pseudomorphic GaAsP/GaP SAQDs depending on the growth temperature. We demonstrate that the atomic structure of Ga(As,P)/GaP heterostructures is ruled by the temperature dependence of adatom diffusion rate and GaAs-GaP intermixing. The band alignment of pseudomorphic GaAs/GaP QW and GaAsP/GaP SAQDs is shown to be of type II, in contrast to that of fully relaxed GaAs/GaP SAQDs, which have the band alignment of type I with the lowest electronic states at the indirect L valley of the GaAs conduction band.

Abramkin, D. S.; Putyato, M. A.; Budennyy, S. A.; Gutakovskii, A. K.; Semyagin, B. R.; Preobrazhenskii, V. V.; Shamirzaev, T. S. [A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Pr. Lavrentyeva 13, 630090 Novosibirsk (Russian Federation); Kolomys, O. F.; Strelchuk, V. V. [V. E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, Pr. Nauki 41, 03028 Kiev (Ukraine)

2012-10-15T23:59:59.000Z

90

Norvento USA LLC | Open Energy Information  

Open Energy Info (EERE)

LLC LLC Jump to: navigation, search Name Norvento USA LLC Place Boston, Massachusetts Product Boston-based engineering consultancy and division of Norvento SA. Coordinates 42.358635°, -71.056699° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.358635,"lon":-71.056699,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

91

Building Energy Software Tools Directory: EnergyGauge USA  

NLE Websites -- All DOE Office Websites (Extended Search)

EnergyGauge USA EnergyGauge USA EnergyGauge USA logo. User-friendly residential building energy simulation which allows calculation and rating of energy use of residential buildings around the United States. ENERGYGAUGE USA, takes advantage of current generation personal computers that perform an hourly annual computer simulation in less than half a minute. Includes Manual-J system sizing analysis, and an improvement analysis mode to analyze cost-effectiveness of energy upgrades. � ENERGYGAUGE USA uses DOE-2.1E with a number of enhancements which allow superior simulation of duct air leakage and heat transfer (thermal conditions of zones in which ducts are located strongly affects performance) as well as improved calculation of air conditioners, heat pump and furnaces performance. Slab, crawlspace and basement foundation types

92

RECORD OF CATEGORICAL EXCLUSION DETERMINATION ENI USA GAS MARKETING LLC  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

ENI USA GAS MARKETING LLC ENI USA GAS MARKETING LLC FE DOCKET NO. lO·152-LNG PROPOSED ACTIONS: Eni USA Gas Marketing LlC (Eni USA), a Delaware limited liability company with its primary place of business in Houston, Texas, filed an application with the Office of Fossil Energy (FE) on November 30,2010, seeking authorization to export previously imported liquefied natural gas (LNG) from the Cameron LNG Terminal in Cameron Parish, louisiana to any country not prohibited by u.s. law or policy. The Application was submitted pursuant to section 3 of the Natural Gas Act and 10 CFR part 590 of the Department of Energy's (DOE) regulations. No new facilities or modification to any existing facilities at the Cameron LNG Terminal are required in order for Eni USA to export LNG from that faci

93

Naturener USA LLC formerly Great Plains Wind Energy | Open Energy  

Open Energy Info (EERE)

LLC formerly Great Plains Wind Energy LLC formerly Great Plains Wind Energy Jump to: navigation, search Name Naturener USA, LLC (formerly Great Plains Wind & Energy) Place San Francisco, California Zip 94111 Sector Wind energy Product Developer of a wind farm in Montana, has been sold to Naturener S.A. References Naturener USA, LLC (formerly Great Plains Wind & Energy)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Naturener USA, LLC (formerly Great Plains Wind & Energy) is a company located in San Francisco, California . References ↑ "Naturener USA, LLC (formerly Great Plains Wind & Energy)" Retrieved from "http://en.openei.org/w/index.php?title=Naturener_USA_LLC_formerly_Great_Plains_Wind_Energy&oldid=3491

94

NPP Boreal Forest: Superior National Forest, U.S.A.  

NLE Websites -- All DOE Office Websites (Extended Search)

Superior National Forest, U.S.A., 1983-1984 Superior National Forest, U.S.A., 1983-1984 Data Citation Cite this data set as follows: Hall, F. G. 1997. NPP Boreal Forest: Superior National Forest, U.S.A., 1983-1984. Data set. Available on-line [http://www.daac.ornl.gov] from Oak Ridge National Laboratory Distributed Active Archive Center, Oak Ridge, Tennessee, U.S.A. Description Productivity of a boreal forest was determined at 31 spruce and 30 aspen forest stands in the Superior National Forest (SNF) near Ely, Minnesota, U.S.A., in 1983 and 1984 by the National Aeronautics and Space Administration. The purpose of the experiment was to investigate the ability of remote sensing to provide estimates of biophysical properties of ecosystems, such as leaf area index (LAI), biomass and net primary productivity (NPP). These ground-based estimates of above-ground biomass

95

USA Biomass Power Producers Alliance | Open Energy Information  

Open Energy Info (EERE)

Producers Alliance Producers Alliance Jump to: navigation, search Name USA Biomass Power Producers Alliance Place Sacramento, California Sector Biomass Product National trade association of biomass power producers in US. References USA Biomass Power Producers Alliance[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. USA Biomass Power Producers Alliance is a company located in Sacramento, California . References ↑ "USA Biomass Power Producers Alliance" Retrieved from "http://en.openei.org/w/index.php?title=USA_Biomass_Power_Producers_Alliance&oldid=352626" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages

96

ENG-Canada-USA Government Procurement (clean 11 Feb 2010 printed...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

ENG-Canada-USA Government Procurement (clean 11 Feb 2010 printed) ENG-Canada-USA Government Procurement (clean 11 Feb 2010 printed) ENG-Canada-USA Government Procurement (clean 11...

97

General Atomics (GA) Fusion News: A New Spin on Understanding...  

NLE Websites -- All DOE Office Websites (Extended Search)

General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New...

98

Rodefeld Landfill Ga Biomass Facility | Open Energy Information  

Open Energy Info (EERE)

Rodefeld Landfill Ga Biomass Facility Jump to: navigation, search Name Rodefeld Landfill Ga Biomass Facility Facility Rodefeld Landfill Ga Sector Biomass Facility Type Landfill Gas...

99

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

100

Conference program and abstracts. International Biogeography Society 6th Biennial Meeting 9-13 January 2013, Miami, Florida, USA  

E-Print Network (OSTI)

Colorado Boulder, USA Conservation of biodiversity demandsBotanical Garden, USA. brianmachovina@gmail.com Demand for

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

102

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures  

Science Conference Proceedings (OSTI)

GaAsBi/GaAs/AlGaAs separate confinement heterostructures are grown using an asymmetric temperature profile due to the low optimal growth temperature of GaAsBi; the bottom AlGaAs barrier is grown at 610 Degree-Sign C, while the GaAsBi quantum well and the top AlGaAs barrier are grown at 320 Degree-Sign C. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that this approach results in samples with excellent structural and optical properties. The high quality of the low temperature AlGaAs barrier is attributed to the presence of Bi on the surface as indicated by a (1 Multiplication-Sign 3) surface reconstruction persisting throughout the low temperature growth.

Fan Dongsheng; Yu Shuiqing [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Zeng Zhaoquan; Hu Xian; Dorogan, Vitaliy G.; Li Chen; Benamara, Mourad; Hawkridge, Michael E.; Mazur, Yuriy I.; Salamo, Gregory J. [Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Johnson, Shane R. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States); Wang, Zhiming M. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

2012-10-29T23:59:59.000Z

103

NPP Grassland: Jornada, U.S.A. [New Mexico]  

NLE Websites -- All DOE Office Websites (Extended Search)

Jornada, U.S.A., 1970-1972 Jornada, U.S.A., 1970-1972 [PHOTOGRAPH] Photograph: Jornada during the PROVE experiment, May 1997 (click on the photo to view a series of images from this site). Data Citation Cite this data set as follows: Pieper, R. D. 1998. NPP Grassland: Jornada, U.S.A., 1970-1972. Data set. Available on-line [http://www.daac.ornl.gov] from Oak Ridge National Laboratory Distributed Active Archive Center, Oak Ridge, Tennessee, U.S.A. Description Productivity of a desert grassland was monitored at the Jornada IBP study site from 1970 to 1972. Dynamics of above-ground plant biomass were monitored at roughly 2-week intervals during the growing season. Data on above ground live biomass, standing dead matter and litter are available, for two replications of a grazed and an "ungrazed" (relatively undisturbed)

104

USA Manufacturing: Proposed Penalty (2013-CE-5336) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Proposed Penalty (2013-CE-5336) Proposed Penalty (2013-CE-5336) USA Manufacturing: Proposed Penalty (2013-CE-5336) January 31, 2013 DOE alleged in a Notice of Proposed Civil Penalty that USA Manufacturing failed to certify walk-in cooler or freezer components as compliant with the energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. USA Manufacturing: Proposed Penalty (2013-CE-5336) More Documents & Publications USA Manufacturing: Order (2013-CE-5336) Amerikooler: Proposed Penalty (2013-CE-5307)

105

DOE Reaches Agreement with LG Electronics, USA, On Refrigerator Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Reaches Agreement with LG Electronics, USA, On Refrigerator Reaches Agreement with LG Electronics, USA, On Refrigerator Energy Matter DOE Reaches Agreement with LG Electronics, USA, On Refrigerator Energy Matter November 14, 2008 - 4:47pm Addthis ENERGY STAR® Program Continues to Help American Consumers Make Energy Efficient Choices WASHINGTON - The U.S. Department of Energy (DOE) today announced an agreement with LG Electronics, USA, Inc. (LG), resolving concerns related to energy usage measurements reported on LG French Door refrigerators with through-the-door ice and water service. The ENERGY STAR® program helps American consumers make energy efficient choices, saving billions of dollars while protecting the environment by using identified energy efficient products and practices. "DOE believes that the actions LG plans to take will benefit consumers and

106

Transportation Biofuels in the USA Preliminary Innovation Systems Analysis  

E-Print Network (OSTI)

as Feedstock for a Bioenergy and Bioproducts Industry: TheThe Economic Impacts of Bioenergy Crop Production on U.S.as Feedstock for a Bioenergy and Bioproducts Industry: The

Eggert, Anthony

2007-01-01T23:59:59.000Z

107

Surface Indicators of Geothermal Activity at Salt Wells, Nevada, USA,  

Open Energy Info (EERE)

Surface Indicators of Geothermal Activity at Salt Wells, Nevada, USA, Surface Indicators of Geothermal Activity at Salt Wells, Nevada, USA, Including Warm Ground, Borate Deposits, and Siliceous Alteration Jump to: navigation, search OpenEI Reference LibraryAdd to library Conference Paper: Surface Indicators of Geothermal Activity at Salt Wells, Nevada, USA, Including Warm Ground, Borate Deposits, and Siliceous Alteration Abstract Surface indicators of geothermal activity are often present above blind or concealed geothermal systems in the Great Basin, but their expressions are sometimes subtle. When mapped in detail, these indicators yield valuable information on the location, structural controls, and potential subsurface reservoir temperatures of geothermal fluids. An example is provided by the Salt Wells geothermal system in Churchill County, Nevada, USA, where

108

Secretary Steven Chu Editorial in USA Today | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Secretary Steven Chu Editorial in USA Today Secretary Steven Chu Editorial in USA Today Secretary Steven Chu Editorial in USA Today March 5, 2009 - 12:00am Addthis Washington, D.C. - This morning's edition of USA Today includes the following editorial from Energy Secretary Steven Chu highlighting President Obama's plans to develop and deploy new energy technologies that will put Americans to work, reduce our dependence on foreign oil and address the global climate crisis: Research pays for itself: Investments in clean energy will unleash innovations, create jobs By Steven Chu To lift our economy and put Americans back to work, President Obama is making a major investment in clean energy. Clean energy is the best opportunity we have to create jobs today and launch the industries of tomorrow. It's also critical for our security - to

109

NPP Grassland: Konza Prairie, U.S.A. [Kansas]  

NLE Websites -- All DOE Office Websites (Extended Search)

Konza Prairie, U.S.A., 1984-1990 Konza Prairie, U.S.A., 1984-1990 Data Citation Cite this data set as follows: Knapp, A. K., and D. Ojima. 1996. NPP Grassland: Konza Prairie, U.S.A., 1984-1990. Data set. Available on-line [http://www.daac.ornl.gov] from Oak Ridge National Laboratory Distributed Active Archive Center, Oak Ridge, Tennessee, U.S.A. Description Productivity of a humid temperate tall-grass prairie was determined at the Konza Prairie Natural Research Area from 1975 to the present. Monthly dynamics of above-ground plant biomass have been monitored since 1984, and estimates of above-ground plant production have been made since 1975. The Konza Prairie was the site of the First ISLSCP (International Satellite Land Surface Climatology Project) Field Experiment (FIFE), an intensive

110

NPP Grassland: Osage, U.S.A. [Oklahoma]  

NLE Websites -- All DOE Office Websites (Extended Search)

Osage, U.S.A., 1970-1972 Osage, U.S.A., 1970-1972 [PHOTOGRAPH] Photograph: Insect sampling trap at the Osage site (click on the photo to view a series of images from this site). Data Citation Cite this data set as follows: Risser, P. G. 1998. NPP Grassland: Osage, U.S.A., 1970-1972. Data set. Available on-line [http://www.daac.ornl.gov] from Oak Ridge National Laboratory Distributed Active Archive Center, Oak Ridge, Tennessee, U.S.A. Description Productivity of a tallgrass prairie grassland was monitored at the Osage study site from 1970 to 1972. Dynamics of above-ground plant biomass were monitored at roughly 2-week intervals during the growing season. Data on above-ground live biomass, standing dead matter and litter are available, for two replications of a grazed and an "ungrazed" (relatively undisturbed)

111

Yi-Jen Chiang Polytechnic University, NY, USA  

E-Print Network (OSTI)

Yi-Jen Chiang Xiang Lu Polytechnic University, NY, USA (appeared in Eurographics, Sept. 2003) #12] does not capture genus-change-only events) 1. Classify all vertices as critical / non-critical [Chiang

Chiang, Yi-Jen

112

TianRun USA Inc | Open Energy Information  

Open Energy Info (EERE)

Name TianRun USA Inc. Place Minnesota Sector Wind energy Product Minnesota-based investment arm of Goldwind Science & Technology, Beijing Tianrun invested USD 3m to set up the...

113

CDIAC::Carbon Emission::Time Series USA Data  

NLE Websites -- All DOE Office Websites (Extended Search)

Estimates of monthly carbon dioxide emissions and associated 13C values from fossil-fuel consumption in the U.S.A. In Trends: A Compendium of Data on Global Change Carbon...

114

Downtown Athens DWBrooksMall  

E-Print Network (OSTI)

Riverbend Research Lab Old CCRC Center for Applied Isotope Study Central Food Storage Environmental Safety Geography /Geology Chemistry CCQC Biological Sciences Myers Mary Lyndon Rutherford Soule Science Library SOUTHVIEW DR RIVER RD Tucker CEDAR ST SOULE ST WEST GREEN ST DW BROOKSDR Conner Lumpkin House Barrow Geology

Scott, Robert A.

115

Chemical profiles of switchgrass  

NLE Websites -- All DOE Office Websites (Extended Search)

profiles profiles of switchgrass Zhoujian Hu a,b , Robert Sykes a,c , Mark F. Davis a,c , E. Charles Brummer a,d , Arthur J. Ragauskas a,b,e, * a BioEnergy Science Center, USA b School of Chemistry and Biochemistry, Institute of Paper Science and Technology, Georgia Institute of Technology, Atlanta, GA 30332, USA c National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA d Institute for Plant Breeding, Genetics, and Genomics, Department of Crop and Soil Sciences, University of Georgia, Athens, GA 30602, USA e Forest Products and Chemical Engineering Department, Chemical and Biological Engineering, Chalmers University of Technology, SE-412 96 Göteborg, Sweden a r t i c l e i n f o Article history: Received 15 April 2009 Received in revised form 10 December 2009 Accepted 10 December 2009 Available online 13 January 2010 Keywords: Switchgrass Morphological components Chemical

116

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

DOE Green Energy (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

117

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells  

E-Print Network (OSTI)

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells I. Friel, C online 20 June 2005 An ultraviolet electroabsorption modulator based on AlGaN/GaN quantum wells is demonstrated. Enhanced excitonic absorption in the quantum wells at around 3.48 eV was achieved using

Moustakas, Theodore

118

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

119

Environmental Toxicology and Chemistry, Vol. 25, No. 2, pp. 458469, 2006 Printed in the USA  

E-Print Network (OSTI)

the Anaconda Smelter Superfund Site, Anaconda, Montana, USA, to determine their exposure to five metal

Strauss, Richard E.

120

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

Science Conference Proceedings (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Microsoft Word - cwr117.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

© The Author 2011. Published by Oxford University Press. All rights reserved. © The Author 2011. Published by Oxford University Press. All rights reserved. For Permissions, please e-mail: journals.permissions@oup.com The ability of land plants to synthesize glucuronoxylans predates the evolution of tracheophytes. Ameya Kulkarni 2 , Maria J. Peña 2 , Utku Avci 2 , Koushik Mazumder 2 , Breeanna Urbanowicz 2 , Sivakumar Pattathil 2 , Yanbin Yin 3 , Malcolm A. O'Neill 2 , Alison W. Roberts 4 , Michael G. Hahn 2,5 , Ying Xu 3 , Alan G. Darvill 2,6 , and William S.York 1,2,6 2 Complex Carbohydrate Research Center and US Department of Energy Bioenergy Science Center, The University of Georgia, 315 Riverbend Road, Athens, GA 30602, USA, 3 Computational System Biology Laboratory, Department of Biochemistry and Molecular Biology and DOE Bioenergy Science Center, The University of Georgia, Athens, GA 30602,

122

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures  

Science Conference Proceedings (OSTI)

Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

2012-12-24T23:59:59.000Z

123

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents (OSTI)

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

124

Predicted effects of prescribed burning and harvesting on forest recovery and sustainability in southwest Georgia, USA  

SciTech Connect

A model-based analysis of the effect of prescribed burning and forest thinning or clear-cutting on stand recovery and sustainability was conducted at Fort Benning, GA, in the southeastern USA. Two experiments were performed with the model. In the first experiment, forest recovery from degraded soils was predicted for 100 years with or without prescribed burning. In the second experiment simulations began with 100 years of predicted stand growth, then forest sustainability was predicted for an additional 100 years under different combinations of prescribed burning and forest harvesting. Three levels of fire intensity (low, medium, and high), that corresponded to 17%, 33%, and 50% consumption of the forest floor C stock by fire, were evaluated at 1-, 2-, and 3-year fire return intervals. Relative to the control (no fire), prescribed burning with a 2- or 3-year return interval caused only a small reduction in predicted steady state soil C stocks ({le} 25%) and had no effect on steady state tree wood biomass, regardless of fire intensity. Annual high intensity burns did adversely impact forest recovery and sustainability (after harvesting) on less sandy soils, but not on more sandy soils that had greater N availability. Higher intensity and frequency of ground fires increased the chance that tree biomass would not return to pre-harvest levels. Soil N limitation was indicated as the cause of unsustainable forests when prescribed burns were too frequent or too intense to permit stand recovery.

Garten Jr, Charles T [ORNL

2006-12-01T23:59:59.000Z

125

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

126

Geochemistry Of The Lake City Geothermal System, California, Usa | Open  

Open Energy Info (EERE)

Geochemistry Of The Lake City Geothermal System, California, Usa Geochemistry Of The Lake City Geothermal System, California, Usa Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Conference Paper: Geochemistry Of The Lake City Geothermal System, California, Usa Details Activities (2) Areas (1) Regions (0) Abstract: Lake City hot springs and geothermal wells chemically fall into a narrow compositional group. This indicates that, with the exception of a few hot springs, mixing with shallow cold ground waters does not have a significant influence on the chemistry of the hot springs. Narrow ranges in plots of F, B and Li versus Cl, and _D to _18O values indicate minimal mixing. Because of this, the compositions of the natural hot spring waters are fairly representative of the parent geothermal water. The average

127

Preliminary Site Assessment Of The Redfield Campus, Reno, Nevada, Usa |  

Open Energy Info (EERE)

Site Assessment Of The Redfield Campus, Reno, Nevada, Usa Site Assessment Of The Redfield Campus, Reno, Nevada, Usa Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Conference Paper: Preliminary Site Assessment Of The Redfield Campus, Reno, Nevada, Usa Details Activities (1) Areas (1) Regions (0) Abstract: To develop a foundation to support future geothermal potential assessment on the Redfield campus property, this project compiled a GIS with the framework coming from existing geologic, hydrologic, and geoscience information. Along with the GIS, an InSAR deformation study was conducted from a suite of previously created interferograms from 1993-2005. Geochemical data were also re-evaluated in the context of fault controlled flow paths and the InSAR data results. Estimates of vertical and horizontal surface displacements associated with production of geothermal fluids were

128

Macquarie Funds Management USA Inc | Open Energy Information  

Open Energy Info (EERE)

Macquarie Funds Management USA Inc Macquarie Funds Management USA Inc Jump to: navigation, search Name Macquarie Funds Management (USA) Inc. Place Carlsbad, California Zip 92008 Product Fund of funds arm of Macquarie focused on taking limited partnership interests in clean-energy focused private equity firms Coordinates 31.60396°, -100.641609° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.60396,"lon":-100.641609,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

129

Mitsubishi Electric and Electronics USA Inc | Open Energy Information  

Open Energy Info (EERE)

Electric and Electronics USA Inc Electric and Electronics USA Inc Jump to: navigation, search Name Mitsubishi Electric and Electronics USA Inc Place Cypress, California Zip 90630 Sector Solar Product Markets and supports consumer, commercial and industrial electronic products in US, including solar powered. Coordinates 29.975226°, -95.680206° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":29.975226,"lon":-95.680206,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

130

Gatewaycompatible vectors for highthroughput gene functional analysis in switchgrass (Panicum virgatum L.) and other monocot species  

NLE Websites -- All DOE Office Websites (Extended Search)

Gateway-compatible Gateway-compatible vectors for high-throughput gene functional analysis in switchgrass (Panicum virgatum L.) and other monocot species David G.J. Mann 1,5,†* , Peter R. LaFayette 2,3,5 , Laura L. Abercrombie 1,5 , Zachary R. King 3,5 , Mitra Mazarei 1,5 , Mathew C. Halter 1 , Charleson R. Poovaiah 1,5 , Holly Baxter 1,5 , Hui Shen 4,5 , Richard A. Dixon 4,5 , Wayne A. Parrott 2,3,5 and C. Neal Stewart Jr 1,5 1 Department of Plant Sciences, The University of Tennessee, Knoxville, TN, USA 2 Department of Crop and Soil Sciences, The University of Georgia, Athens, GA, USA 3 Institute for Plant Breeding, Genetics & Genomics, The University of Georgia, Athens, GA, USA 4 Plant Biology Division, Samuel Roberts Noble Foundation, Ardmore, OK, USA 5 The BioEnergy Science Center, Oak Ridge National Laboratory, Oak Ridge, TN, USA Received 31 May 2011; revised 12 June 2011; accepted 10 August 2011.

131

passivation of InGaN/GaN nanopillar light emitting diodes.  

E-Print Network (OSTI)

??Recently, InGaN/GaN based blue light emitting diodes (LEDs) have become widely available commercially, but their efficiency is reduced due to the quantum confined Stark effect (more)

Choi, Won

2013-01-01T23:59:59.000Z

132

Detailed Analysis of Temperature Characteristics of InGaP/InGaAs ...  

Science Conference Proceedings (OSTI)

The current-voltage (I-V) characteristics of single-junction solar cells (InGaP, InGaAs, Ge solar cells) were measured at various temperatures. The structures of ...

133

AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy  

SciTech Connect

The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

C.A. Wang; C.J. Vineis; D.R. Calawa

2002-02-13T23:59:59.000Z

134

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw compressors, 30-90 kW / 40-125 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

135

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors ...  

U.S. Energy Information Administration (EIA)

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors, 11-30 kW / 15-40 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

136

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw compressors, 90-160 kW / 125-200 hp.,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading ...

137

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells  

E-Print Network (OSTI)

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells Shunfeng Li Cubic InGaN/GaN multi-quantum-wells MQWs with high structural and optical quality are achieved by utilizing freestanding 3C-SiC 001 substrates and optimizing InGaN quantum well growth. Superlattice peaks up

As, Donat Josef

138

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT  

Science Conference Proceedings (OSTI)

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

Lenka, T. R., E-mail: trlenka@gmail.com; Panda, A. K., E-mail: akpanda62@hotmail.com [National Institute of Science and Technology, Palur Hills (India)

2011-05-15T23:59:59.000Z

139

HERA USA Inc formerly Ergenics Inc | Open Energy Information  

Open Energy Info (EERE)

HERA USA Inc formerly Ergenics Inc HERA USA Inc formerly Ergenics Inc Jump to: navigation, search Name HERA USA Inc (formerly Ergenics Inc) Place Ringwood, New Jersey Zip 7456 Sector Hydro, Hydrogen Product Ergenics is a USA based company with extensive experience in the development of products based on metal hydride materials. Its product capabilities include hydrogen storage units and solid state hydrogen compressors. Coordinates 36.380115°, -98.247919° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":36.380115,"lon":-98.247919,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

140

Sol-Up USA, LLC | Open Energy Information  

Open Energy Info (EERE)

Sol-Up USA, LLC Sol-Up USA, LLC Jump to: navigation, search Logo: Sol-Up USA, LLC Name Sol-Up USA, LLC Address 3355 West Spring Mountain Road, Suite 3 Place Las Vegas, NV Zip 89102 Sector Solar Product PV, Solar Thermal, Solar Cooling Year founded 2009 Number of employees 1-10 Phone number +1 (702) 586-9800 Website http://www.sol-up.com Coordinates 36.125853°, -115.184757° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":36.125853,"lon":-115.184757,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

THE UNIVERSITY OF TEXAS AT AUSTIN, TEXAS, USA  

E-Print Network (OSTI)

THE UNIVERSITY OF TEXAS AT AUSTIN AUSTIN, TEXAS, USA UNIVERSITY-WIDE PARTNER Fast facts Language university website. Location The University of Texas is located in the centre of Austin. The city is situated on the banks of the Colorado River in Central Texas. This part of Texas is also known as the Hill Country

Hopkins, Gail

142

Press release For Immediate Release Seattle, USA. June 6, 2008  

E-Print Network (OSTI)

Press release ­ For Immediate Release Seattle, USA. June 6, 2008 Global trade of woody biomass has almost doubled in five years With the increasing demand for woody biomass, global trade of particularly fiber source for energy generation but because of higher demand for renewable energy and increasing

143

Quantized states in homogenous polarized GaInN GaN quantum wells  

E-Print Network (OSTI)

Quantized states in homogenous polarized GaInN GaN quantum wells C. Wetzel1, S. Kamiyama1, H. Amano wells is calculated in a single particle model. The act- ing electric eld in the wells and the band gap-dimensional well layers our approach is based on induction from results obtained at the binary GaN barri- ers

Wetzel, Christian M.

144

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS  

E-Print Network (OSTI)

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS C. Wetzel, T. Takeuchi, H. Amano, and IInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across

Wetzel, Christian M.

145

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells  

E-Print Network (OSTI)

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells Marcus Eickhoff* and Dieter Suter, nanometer-sized quantum wells possible with excellent sensitivity and selectivity while avoiding.60.-k; 78.55.Cr; 78.67.De Keywords: ODNMR; Pulsed excitation; Quantum well; GaAs 1. Introduction Nuclear

Suter, Dieter

146

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network (OSTI)

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Recanati, Catherine

147

Princeton Plasma Physics Lab - General Atomics (GA)  

NLE Websites -- All DOE Office Websites (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
148

TMS P&GA Wired to Washington  

Science Conference Proceedings (OSTI)

P & GA COMMITTEE HOME ... the connection between MSE and such key U.S. initiatives as national security, energy independence, and economic growth.

149

Y2, Threading Defect Elimination in GaN Nanostructures  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

150

EA-1188: Chevron U.S.A., Inc. and Santa Fe Energy Resources,...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

88: Chevron U.S.A., Inc. and Santa Fe Energy Resources, Inc. Midway Valley 3D Seismic Project, Kern County, California EA-1188: Chevron U.S.A., Inc. and Santa Fe Energy Resources,...

151

International Technical Conference on Coal Utilization & Fuel Systems Clearwater (FL), USA, March 4-7, 2002  

E-Print Network (OSTI)

27th International Technical Conference on Coal Utilization & Fuel Systems Clearwater (FL), USA is a legitimate demand for more base-load energy which can be covered only by additional nuclear power the USA, i.e. Los Alamos

Zevenhoven, Ron

152

Rapid Traffic Information Dissemination Using Named Data Los Angeles, CA, USA  

E-Print Network (OSTI)

@cs.ucla.edu Alexander Afanasyev UCLA Los Angeles, CA, USA afanasev@cs.ucla.edu Romain Kuntz Toyota InfoTechnology Center Mountain View, CA, USA rkuntz@us.toyota-itc.com Rama Vuyyuru Toyota InfoTechnology Center Mountain View, CA, USA rama@us.toyota-itc.com Ryuji Wakikawa Toyota InfoTechnology Center Mountain View, CA, USA ryuji@us.toyota

California at Los Angeles, University of

153

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

DOE Green Energy (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

154

Small Log Conference Creating Capacity to Compete Coeur d'Alene, Idaho, USA, 1 April 2005  

E-Print Network (OSTI)

Small Log Conference ­ Creating Capacity to Compete Coeur d'Alene, Idaho, USA, 1 April 2005 F A O Conference ­ Creating Capacity to Compete Coeur d'Alene, Idaho, USA, 1 April 2005 F A O Contents I. Forest. Growing the market #12;Small Log Conference ­ Creating Capacity to Compete Coeur d'Alene, Idaho, USA, 1

155

An Overview of Logging Safety Programs in the USA. Working Paper #43  

E-Print Network (OSTI)

An Overview of Logging Safety Programs in the USA. Working Paper #43 Louisiana Forest Products;1 An Overview of Logging Safety Programs in the USA. a paper presented by Cornelis F. de Hoop Associate throughout the USA to reduce logging accidents and assist loggers with safety programs. Driven by accident

156

Price of Elba Island, GA Liquefied Natural Gas Total Imports...  

Annual Energy Outlook 2012 (EIA)

Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet) Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet)...

157

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

158

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

159

Acciona Wind Energy USA LLC | Open Energy Information  

Open Energy Info (EERE)

Wind Energy USA LLC Wind Energy USA LLC Place Chicago, Illinois Zip 60631 Sector Wind energy Product US wind farms developer subsidiary of Acciona Energy (EHN). Coordinates 41.88415°, -87.632409° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.88415,"lon":-87.632409,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

160

File:INL-geothermal-west-usa.pdf | Open Energy Information  

Open Energy Info (EERE)

west-usa.pdf west-usa.pdf Jump to: navigation, search File File history File usage Western United States Geothermal Resources Size of this preview: 653 × 599 pixels. Other resolution: 654 × 600 pixels. Full resolution ‎(4,639 × 4,256 pixels, file size: 1.29 MB, MIME type: application/pdf) Description Western United States Geothermal Resources Sources Idaho National Laboratory Authors Patrick Laney; Julie Brizzee Related Technologies Geothermal Creation Date 2003-11-01 Extent Regional Countries United States UN Region Northern America States Alaska, Arizona, California, Colorado, Hawaii, Idaho, Montana, Nevada, New Mexico, Oregon, Utah, Washington, Wyoming File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

DOW CHEMICAL U.S.A. + WESTERN DIVISION  

Office of Legacy Management (LM)

DOW CHEMICAL U.S.A. + DOW CHEMICAL U.S.A. + WESTERN DIVISION 2855 MITCHELL DRIVE WALNUT CREEK. CtyLlFORNlA 94598 October 29,1976 415 944-2300 (., L,'; ! - J. 022 . William J. Thornton Health Protection Branch Safety and Environmental Control Division U.S. Energy Research and Development Administration Oak Ridge Operations P. 0. Box E Oak Ridge, Tennessee 37830 Dear Mr. Thornton: This letter is in response to your request of September 24,1976 for information on records of radiological condition of the laboratories at th$ Dow Pittsburg location. We have not been able to find records that would be applicable. The work was with natural uranium carried out under contract no. AT-(30-l)-GEN-236 which was concluded in 1957. We have now comileted a radiological survey of these laboratories since receipt

162

NPP Tundra: Point Barrow, Alaska [U.S.A.]  

NLE Websites -- All DOE Office Websites (Extended Search)

Point Barrow, Alaska, 1970-1972 Point Barrow, Alaska, 1970-1972 Data Citation Cite this data set as follows: Tieszen, L. L. 2001. NPP Tundra: Point Barrow, Alaska, 1970-1972. Data set. Available on-line [http://www.daac.ornl.gov] from Oak Ridge National Laboratory Distributed Active Archive Center, Oak Ridge, Tennessee, U.S.A. Description Productivity of a wet arctic tundra meadow was studied from 1970 to 1972 at Point Barrow, Alaska, U.S.A. Measurements of peak above-ground live biomass and leaf area index were made on 43 permanent plots, 1 m x 10 m, representing the spectrum of undisturbed vegetation. In addition, temporal variation in standing crop was assessed for the 1971 growing season for a sedge meadow only. The study area (71.30 N 156.67 W) is located 3 km inland from the Chukchi

163

NPP Tundra: Toolik Lake, Alaska [U.S.A.]  

NLE Websites -- All DOE Office Websites (Extended Search)

Toolik Lake, Alaska, 1982 Toolik Lake, Alaska, 1982 Data Citation Cite this data set as follows: Shaver, G. R. 2001. NPP Tundra: Toolik Lake, Alaska, 1982. Data set. Available on-line [http://www.daac.ornl.gov] from Oak Ridge National Laboratory Distributed Active Archive Center, Oak Ridge, Tennessee, U.S.A. Description Productivity of four contrasting vegetation types was studied during 1982 near Toolik Lake, Alaska, U.S.A. Above-ground biomass and below-ground stem/ rhizome biomass were measured on three occasions during the growing season; for (1) a "tussock" tundra containing graminoids, deciduous shrubs and evergreen shrubs, (2) a "shrub" tundra dominated by deciduous willow shrubs, (3) a "heath" tundra of evergreen shrubs, and (4) a "wet" tundra

164

NORDIC Wind Manufacturing Project Nordic Windpower USA Inc.  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2,2011 2,2011 Record of Categorical Exclusion for NORDIC Wind Manufacturing Project Nordic Windpower USA Inc. Description of Proposed Action: The Department of Energy's (DOE's) proposed action is to issue a loan guarantee to Nordic Windpower USA Inc., for the assembly and testing of two-bladed, patented teeter hub technology wind turbines. The initial production will be of 1 MW N 1 000 Nordic wind turbine nacelles. The assembly and testing operations would take place in an existing facility, Super Hangar Bay 12, within the Kansas City International Airport in Kansas City, Missouri. The Super Hangar facility is located adjacent to Interstate 29 on the east side of the airport. Bay 12 was designed for overhauling large aircraft such as the Boeing 747 and includes ample space for Nordic's assembly and testing operations. Project

165

Solar World USA not SolarWorld AG | Open Energy Information  

Open Energy Info (EERE)

World USA not SolarWorld AG World USA not SolarWorld AG Jump to: navigation, search Name Solar World USA (not SolarWorld AG) Place Colorado Springs, Colorado Zip 80907 Sector Solar Product Solar World manufactures solar powered products for educational, consumer, electronic and custom OEM markets. References Solar World USA (not SolarWorld AG)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar World USA (not SolarWorld AG) is a company located in Colorado Springs, Colorado . References ↑ "Solar World USA (not SolarWorld AG)" Retrieved from "http://en.openei.org/w/index.php?title=Solar_World_USA_not_SolarWorld_AG&oldid=351350" Categories: Clean Energy Organizations

166

Calyxo USA Solar Fields LLC | Open Energy Information  

Open Energy Info (EERE)

Calyxo USA Solar Fields LLC Calyxo USA Solar Fields LLC Jump to: navigation, search Name Calyxo USA (Solar Fields LLC) Place Perrysburg, Ohio Zip 43551 Sector Solar Product Producer of cadmium telluride photovoltaic modules. Q-Cells acquired Solar Fields IP and assets which have been transferred into the US branch of Q-Cells subsidiary Calyxo GmbH Coordinates 41.55671°, -83.628899° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.55671,"lon":-83.628899,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

167

AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE  

SciTech Connect

An AlGaAs/GaAs resonant tunneling diode (RTD) with submicron size was fabricated on {l_brace}111{r_brace} oblique facets of GaAs with selective MBE. The method is based on the fact that a certain facet structure is formed on a patterned substrate in selective MBE because the growth rate depends strongly on the facet structure. The fabrication of a double-barrier structure was attempted on a {l_brace}111{r_brace}B facet. The current-voltage characteristics of the sample showed negative differential resistance at 77K demonstrating that we have achieved an RTD on a submicron facet.

Nishiwaki, T.; Yamaguchi, M.; Sawaki, N. [Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464-8603 (Japan)

2007-04-10T23:59:59.000Z

168

Accelerated aging of GaAs concentrator solar cells  

DOE Green Energy (OSTI)

An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

Gregory, P.E.

1982-04-01T23:59:59.000Z

169

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence  

E-Print Network (OSTI)

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence October 1997; accepted for publication 5 January 1998 Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed

Bowers, John

170

Optical injection and coherent control of a ballistic charge current in GaAsAlGaAs quantum wells  

E-Print Network (OSTI)

Optical injection and coherent control of a ballistic charge current in GaAs?AlGaAs quantum wells of Hache´ et al.,2,3 but in this article we report injection into the plane of GaAs/AlGaAs quantum wells specific to quantum wells. Although we expect the underlying physics of injection and control of currents

Sipe,J. E.

171

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network (OSTI)

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

172

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures  

E-Print Network (OSTI)

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode and GaInN/GaN heterostructures typically used for high efficiency light emitting diodes is of high materials for green, blue, and UV light emitting diodes (LED) [1-2]. It is known that huge piezoelectric

Wetzel, Christian M.

173

Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

( gate=nickel)/(barrier=GaN/Al (y) Ga (1?y) N)/(buffer=GaN)/(substrate=SiC ) polarizationinduced high electron mobility transistors (PI-HEMTs) show promise for ultrahigh power microwave amplification. The polarization fields in these Ga-face

Lester F. Eastman

1999-01-01T23:59:59.000Z

174

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

175

J1, MBE Growth of Metamorphic InGaP on GaAs and GaP for Wide ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

176

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics  

Science Conference Proceedings (OSTI)

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO"2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium lamp ... Keywords: GaN, HEMT, MQW, Photo-chemical vapor deposition, SiO 2

Kai-Hsuan Lee; Ping-Chuan Chang; Shoou-Jinn Chang

2013-04-01T23:59:59.000Z

177

Free carrier accumulation at cubic AlGaN/GaN heterojunctions  

Science Conference Proceedings (OSTI)

Cubic Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructures were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. A profile of the electrostatic potential across the cubic-AlGaN/GaN heterojunction was obtained using electron holography in the transmission electron microscope. The experimental potential profile indicates that the unintentionally doped layers show n-type behavior and accumulation of free electrons at the interface with a density of 5.1 x 10{sup 11}/cm{sup 2}, about one order of magnitude less than in wurtzite AlGaN/GaN junctions. A combination of electron holography and cathodoluminescence measurements yields a conduction-to-valence band offset ratio of 5:1 for the cubic AlGaN/GaN interface, which also promotes the electron accumulation. Band diagram simulations show that the donor states in the AlGaN layer provide the positive charges that to a great extent balance the two-dimensional electron gas.

Wei, Q. Y.; Li, T.; Huang, J. Y.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Tschumak, E.; Zado, A.; As, D. J. [Department of Physics, Universitaet Paderborn, D-33098 Paderborn (Germany)

2012-04-02T23:59:59.000Z

178

L1, Formation of Structural Defects in AlGaN/GaN High Electron ...  

Science Conference Proceedings (OSTI)

Transmission electron microscope (TEM) cross sectional image has shown that electrical degradation is closely related to structural damage in the GaN cap and ...

179

ARM - Participants  

NLE Websites -- All DOE Office Websites (Extended Search)

Delaware, Newark, DE University of Denver, Denver, CO University of Georgia, Athens, GA University of Kentucky, Lexington, KY University of Hawaii at Manoa, Honolulu, HI...

180

Plasma Damage in p-GaN  

SciTech Connect

The effect of Inductively Coupled Plasma H{sub 2} or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400-550{angstrom}. At high ion fluxes or energies there can be type conversion of the initially p-GaN surface. Post etch annealing at 900 C restores the initial conductivity.

Cao, X.A.; Dang, G.T.; Hickman, R.A.; Pearton, S.J.; Ren, F.; Shul, R.J.; Van Hove, J.M.; Zhang, A.P.; Zhang, L.

1999-06-30T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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181

GaTe semiconductor for radiation detection  

SciTech Connect

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

182

U.S. Department of Energy Awards a Contract to USA Repository Services for  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

a Contract to USA Repository a Contract to USA Repository Services for Management and Operating Contractor Support for the Yucca Mountain Project U.S. Department of Energy Awards a Contract to USA Repository Services for Management and Operating Contractor Support for the Yucca Mountain Project October 30, 2008 - 4:14pm Addthis Washington, D.C. -- The U.S. Department of Energy (DOE) today awarded a $2.5 billion management and operating (M&O) contract to USA Repository Services (USA-RS), a wholly-owned subsidiary of the URS Corporation. USA-RS will be supported by principal subcontractors: Shaw Environmental and Infrastructure, Inc., and AREVA Federal Services, Inc. "If we are to meet growing energy demand and slow the growth of greenhouse gas emissions, nuclear power must be a larger part of our energy mix; it is

183

U.S. Department of Energy Awards a Contract to USA Repository Services for  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

U.S. Department of Energy Awards a Contract to USA Repository U.S. Department of Energy Awards a Contract to USA Repository Services for Management and Operating Contractor Support for the Yucca Mountain Project U.S. Department of Energy Awards a Contract to USA Repository Services for Management and Operating Contractor Support for the Yucca Mountain Project October 30, 2008 - 4:14pm Addthis Washington, D.C. -- The U.S. Department of Energy (DOE) today awarded a $2.5 billion management and operating (M&O) contract to USA Repository Services (USA-RS), a wholly-owned subsidiary of the URS Corporation. USA-RS will be supported by principal subcontractors: Shaw Environmental and Infrastructure, Inc., and AREVA Federal Services, Inc. "If we are to meet growing energy demand and slow the growth of greenhouse gas emissions, nuclear power must be a larger part of our energy mix; it is

184

DuraLamp USA: Proposed Penalty (2010-CE-0912) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DuraLamp USA: Proposed Penalty (2010-CE-0912) DuraLamp USA: Proposed Penalty (2010-CE-0912) DuraLamp USA: Proposed Penalty (2010-CE-0912) September 9, 2010 DOE alleged in a Notice of Proposed Civil Penalty that DuraLamp USA, Inc. failed to certify a variety of general service fluorescent lamps as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. DuraLamp USA: Proposed Penalty (2010-CE-0912) More Documents & Publications DuraLamp USA: Order (2010-CE-0912)

185

De'Longhi USA: Proposed Penalty (2010-CE-2114) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

De'Longhi USA: Proposed Penalty (2010-CE-2114) De'Longhi USA: Proposed Penalty (2010-CE-2114) De'Longhi USA: Proposed Penalty (2010-CE-2114) September 8, 2010 DOE alleged in a Notice of Proposed Civil Penalty that De'Longhi USA, Inc. failed to certify a variety of dehumidifiers as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. De'Longhi USA: Proposed Penalty (2010-CE-2114) More Documents & Publications De'Longhi USA: Order (2010-CE-2114) Basement Systems: Proposed Penalty (2010-CE-2110)

186

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors  

E-Print Network (OSTI)

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

Lu, Bin

187

Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated Circuits  

Science Conference Proceedings (OSTI)

A new (AlGa)As/GaAs MODFET integrated circuit simulator is described. Our simulator is a customized version of SPICE incorporating the extended charge control model for MODFET's and the velocity saturation model for ungated FET's used as the load devices. ...

Choong H. Hyun; M. S. Shur; N. C. Cirillo

2006-11-01T23:59:59.000Z

188

Nanocrystals cylindrical microcavities exploiting thin-walled InGaAs/GaAs microtubes  

Science Conference Proceedings (OSTI)

This paper relies on the design and fabrication of CdSe/ZnS core/shell colloidal nanocrystals (NCs) cylindrical microcavities for microphotonics applications. The fabrication technology relies on the release of the strain in strained heterostructures, ... Keywords: Colloidal nanocrystals, InGaAs/GaAs microtubes, Strained multilayer

C. Giordano; M. T. Todaro; A. Salhi; L. Martiradonna; I. Viola; A. Passab; L. Carbone; G. Gigli; A. Passaseo; M. De Vittorio

2007-05-01T23:59:59.000Z

189

Two-dimensional electron gas in AlGaN/GaN heterostructures  

Science Conference Proceedings (OSTI)

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. {copyright} {ital 1997 American Vacuum Society.}

Li, J.Z.; Lin, J.Y.; Jiang, H.X. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Khan, M.A.; Chen, Q. [APA Optics, Inc., Blaine, Minnesota 55449 (United States)] [APA Optics, Inc., Blaine, Minnesota 55449 (United States)

1997-07-01T23:59:59.000Z

190

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

DOE Green Energy (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

191

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED  

Science Conference Proceedings (OSTI)

We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm{sup 2}V{sup -1}s{sup -1} at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affect the low temperature electron mobility in AlGaN/GaN heterostructures. Growth at the transition towards Ga droplet formation produced the best results. A quantitative analysis of the magnetoresistance confirmes scattering at dislocations as the dominant scattering process at low temperature.

Broxtermann, D.; Sivis, M.; Malindretos, J.; Rizzi, A. [IV. physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

2012-03-15T23:59:59.000Z

192

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures  

Science Conference Proceedings (OSTI)

Double pulse doped ({delta}-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm{sup 2}/(V s) at sheet electron densities of 3.00 x 10{sup 12} and 3.36 x 10{sup 12} cm{sup -2}, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A. [Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)

2010-07-15T23:59:59.000Z

193

OP-NARE130261 1..10  

NLE Websites -- All DOE Office Websites (Extended Search)

analyses analyses of transcriptomic data reveal the dynamic organization of the Escherichia coli chromosome under different conditions Qin Ma 1 , Yanbin Yin 2 , Mark A. Schell 1 , Han Zhang 3 , Guojun Li 1,4 and Ying Xu 1,5,6, * 1 Computational Systems Biology Laboratory, Department of Biochemistry and Molecular Biology and Institute of Bioinformatics, University of Georgia, Athens, GA 30602, USA, 2 Department of Biological Sciences, Northern Illinois University, DeKalb, IL 60115-2857, USA, 3 Department of Automation and Intelligent Science, College of Information Technical Science, Nankai University, Tianjin 300071, China, 4 School of Mathematics, Shandong University, Jinan 250100, China, 5 The BioEnergy Science Center, USA and 6 College of Computer Science and Technology, Jilin University, Changchun, Jilin 130012, China Received December 6, 2012; Revised March 20, 2013; Accepted

194

bio  

NLE Websites -- All DOE Office Websites (Extended Search)

Original Papers Original Papers An integrated toolkit for accurate prediction and analysis of cis regulatory motifs at a genome scale Qin Ma 1,a , Bingqiang Liu 2,a , Chuan Zhou 1,2 , Yanbin Yin 3 , Guojun Li 1,2 , Ying Xu 1,4,5, * 1 Computational Systems Biology Laboratory, Department of Biochemistry and Molecular Biology and Institute of Bioinformatics, University of Georgia, Athens, GA 30602, USA 2 School of Mathematics, Shandong University, Jinan 250100, China 3 Department of Biological Sciences, Northern Illinois University, DeKalb, IL 60115-2857, USA 4 BioEnergy Science Center (http://bioenergycenter.org/), USA, and 5 College of Computer Science and Technology, Jilin University, Changchun, Jilin, China a The first two authors contributed equally to this paper * Corresponding author: Ying Xu

195

GaN Nanopore Arrays: Fabrication and Characterization  

E-Print Network (OSTI)

GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

Wang, Yadong

196

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

197

Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape ...  

Science Conference Proceedings (OSTI)

... Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape Memory Alloys. Peng Zhao (Dept. of Materials Science and ...

198

STATEMENT OF CONSIDERATIONS REQUEST BY STUART ENERGY USA FOR AN ADVANCED WAIVER OF  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

STUART ENERGY USA FOR AN ADVANCED WAIVER OF STUART ENERGY USA FOR AN ADVANCED WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER COOPERATIVE AGREEMENT NO. DE-FC36-97GO10221,A001, W(A)-98-017, CH-0983 The Petitioner, Stuart Energy USA, a wholly owned subsidiary of Electrolyser Corporation Ltd. of Toronto, Canada, was awarded this cooperative agreement in response to a proposal to build and supply working models and prototypes of hydrogen fuel appliances based on water electrolysis. The initial phase of this work is being performed under DOE Contract No. DE-FC36-97GO10221. Stuart Energy USA is a large business and has requested a waiver of domestic and foreign patent rights for all subject inventions made by its employees under this agreement. As brought out in Stuart Energy USA's response to question 3, the total estimated cost of the project is

199

EA-1188: Chevron U.S.A., Inc. and Santa Fe Energy Resources, Inc. Midway  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

188: Chevron U.S.A., Inc. and Santa Fe Energy Resources, Inc. 188: Chevron U.S.A., Inc. and Santa Fe Energy Resources, Inc. Midway Valley 3D Seismic Project, Kern County, California EA-1188: Chevron U.S.A., Inc. and Santa Fe Energy Resources, Inc. Midway Valley 3D Seismic Project, Kern County, California SUMMARY This EA evaluates the environmental impacts for the proposed Midway Valley 3D Geophysical Exploration Project. Chevron U.S.A., Inc. and Santa Fe Energy Resources are proposing to conduct seismic investigations just southeast of the City of McKittrick and Derby Acres in the Buena Vista and Midway Valleys, Kern County, California. PUBLIC COMMENT OPPORTUNITIES None available at this time. DOCUMENTS AVAILABLE FOR DOWNLOAD January 13, 1999 EA-1188: Finding of No Significant Impact Chevron U.S.A., Inc. and Santa Fe Energy Resources, Inc. Midway Valley 3D

200

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

Chung, Jinwook W. (Jinwook Will)

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

We have investigated the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors using atomic force microscopy and scanning electron microscopy after removing the gate metallization by ...

Makaram, Prashanth

202

Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment  

E-Print Network (OSTI)

Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate ...

Palacios, Tomas

203

GaN: Defect and Device Issues  

SciTech Connect

The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

1998-11-09T23:59:59.000Z

204

GaAs photoconductive semiconductor switch  

DOE Patents (OSTI)

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

205

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network (OSTI)

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

206

Papers presented by the SL division at the 15th Particle Accelerator Conference, Washington, DC, USA, 17 - 20 May 1993  

E-Print Network (OSTI)

Papers presented by the SL division at the 15th Particle Accelerator Conference, Washington, DC, USA, 17 - 20 May 1993

CERN. Geneva

1993-01-01T23:59:59.000Z

207

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

Fainman, "Influence of chlorine on etched sidewalls inFainman, Influence of chlorine on etched sidewalls inthe RIBE of GaAs with chlorine (Cl 2 ), ion beam sputtering

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

208

JJ2, Optical Polarization of Non-Polar GaInN/GaN LEDs  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

209

K1, Molecular Beam Epitaxy of Catalyst-Free InGaN/GaN Nanowires ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

210

Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes  

E-Print Network (OSTI)

We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

Cornelius S. Bausch; Aune Koitme; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

2013-05-06T23:59:59.000Z

211

Recent progress in InGaAsSb/GaSb TPV devices  

DOE Green Energy (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

212

GaNPAs Solar Cells Lattice-Matched To GaP: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

Geisz, J. F.; Friedman, D. J.; Kurtz, S.

2002-05-01T23:59:59.000Z

213

GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP  

Science Conference Proceedings (OSTI)

We report on the epitaxial growth of an AlSb/InAs heterostructure on a (001) GaP substrate. We investigate the conditions for the most efficient relaxation of GaSb islands on GaP. In particular, we show that the GaP surface treatment and the growth temperature are crucial for the formation of a two-dimensional periodic array of 90 deg. misfit dislocations at the episubstrate interface. With this relaxation process, an AlSb/InAs heterostructure exhibiting a room temperature mobility of 25 500 cm{sup 2} V{sup -1} s{sup -1} on GaP is demonstrated. This result paves the way to the integration of Sb-based devices on Si substrates through the use of GaP/Si templates.

El Kazzi, S.; Desplanque, L.; Coinon, C.; Wallart, X. [Institut d'Electronique, de Microelectronique, et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d'Ascq Cedex (France); Wang, Y.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Marechal Juin, 14050 Caen Cedex (France)

2010-11-08T23:59:59.000Z

214

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents (OSTI)

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

215

Ritual and Authority in Early Athens  

E-Print Network (OSTI)

himself, not the state; Plut. Cim. 13.6-8. 643. According toof Theseus; Theseion Plut. Cim. 8.5-6; Plut. Thes. 36; Paus.island of Skyros. 618 614. Plut. Cim. 13.6-7. Pausanias only

Laughy, Michael Harold

2010-01-01T23:59:59.000Z

216

Athens, Wisconsin: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

5.0330224°, -90.0740226° 5.0330224°, -90.0740226° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":45.0330224,"lon":-90.0740226,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

217

Athens, Greece: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Greece: Energy Resources Greece: Energy Resources Jump to: navigation, search Equivalent URI DBpedia GeoNames ID 264371 Coordinates 37.97918°, 23.716647° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.97918,"lon":23.716647,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

218

Ritual and Authority in Early Athens  

E-Print Network (OSTI)

413 This aition certainly testifies to the perceived antiquity of the festival by fifth-century Athenians, but this evidence does

Laughy, Michael Harold

2010-01-01T23:59:59.000Z

219

Ritual and Authority in Early Athens  

E-Print Network (OSTI)

the institution of the quadrennial Panathenaia, a festi- valand other important quadrennial festivals by the fifth andPol. 54.7, lists the quadrennial version of the Eleusinia as

Laughy, Michael Harold

2010-01-01T23:59:59.000Z

220

Ritual and Authority in Early Athens  

E-Print Network (OSTI)

H. W. 1975. Archaeology in Greece, 1975-76, AR pp. 3-33.Women and Ritual in Ancient Greece, Princeton. Connor, W. R.for Kingship in Geometric Greece, New Haven. Dunbabin, T. J.

Laughy, Michael Harold

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Mercury distribution in Poplar Creek, Oak Ridge, Tennessee, USA  

SciTech Connect

As a result of the lithium-isotope separation process used in the production of thermonuclear fusion weapons during the mid-1950s and early 1960s. 150 t of mercury were released into Poplar Creek (via East Fork Poplar Creek) in Oak Ridge, Tennessee, USA. This project was performed as part of a Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA) remedial investigation to define the nature and extent of mercury contamination in Poplar Creek. Ultraclean sampling techniques and ultrasensitive analytical methods were used to determine methylmercury and inorganic mercury concentrations in surface water, sediment, and pore water from Poplar Creek. Total methylmercury and inorganic mercury concentrations in surface water from reaches downstream from the East Fork Poplar Creek confluence were significantly higher (p < 0.05) than the upstream reference reach. Concentrations in surface water increased with distance downstream from the source (East Fork Poplar Creek), which was opposite of expected results. Sediment methylmercury and inorganic mercury concentrations also increased with the distance downstream from the source and were highest near the mouth of Poplar Creek (1.0--12 ng/g and 630--140,000 ng/g, respectively). High concentrations in surface water and sediment near the mouth of Poplar Creek appear to be a result of sediment deposition and resuspension, apparently caused by the stronger Clinch River current acting as a barrier and its backflow into Poplar Creek as a result of hydropower operations.

Campbell, K.R. [SENES Oak Ridge, Inc., TN (United States). Center for Risk Analysis; Ford, C.J. [Highlands Soil and Water Conservation District, Sebring, FL (United States); Levine, D.A. [Univ. of Tennessee, Knoxville, TN (United States)]|[Oak Ridge National Lab., TN (United States)

1998-07-01T23:59:59.000Z

222

LG Electronics U.S.A. v. DOE, Stipulation of Voluntary Dismissal |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

LG Electronics U.S.A. v. DOE, Stipulation of Voluntary Dismissal LG Electronics U.S.A. v. DOE, Stipulation of Voluntary Dismissal LG Electronics U.S.A. v. DOE, Stipulation of Voluntary Dismissal May 28, 2010 LG Electronics U.S.A., Inc. v. U.S. Dept. of Energy and Steven Chu, Civil Action Number 1:09-cv-02297-JDB, Stipulation of Voluntary Dismissal. LG here voluntarily dismisses its claims against the DOE and Secretary Chu. Parties agree that DOE believes its interpretation of the November 14, 2008 Settlement Agreement is correct, but that LG interpreted the agreement fairly and in good faith. To DOE's knowledge, LG is fulfilling the obligations of that Agreeement, as well as the November 10, 2009 order. DOE's December 18, 2009 Guidance is the first industry-wide clarification for energy efficiency testing procedures for the fill tube and ice ejection

223

FIA-12-0028 - In the Matter of USA Today | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

FIA-12-0028 - In the Matter of USA Today FIA-12-0028 - In the Matter of USA Today FIA-12-0028 - In the Matter of USA Today The Office of Hearings and Appeals (OHA) issued a decision granting an appeal (Appeal) from a Freedom of Information Act (FOIA) determination issued by the Office of Information Resources (OIR). The appellant filed a FOIA request for records pertaining to a loan guarantee application filed by the United States Enrichment Corporation (USEC) for the American Centrifuge Project, and asked for expedited processing of the request. OIR denied the request for expedited processing, and USA Today appealed. In granting the Appeal, OHA cited court decisions finding sufficient urgency to grant expedited processing where there is a significant interest in quickly disseminating news regarding a subject currently under debate by

224

NPP Temperate Forest: OTTER Project Sites, Oregon, U.S.A.  

NLE Websites -- All DOE Office Websites (Extended Search)

Temperate Forest: OTTER Project Sites, Oregon, U.S.A., 1989-1991 Temperate Forest: OTTER Project Sites, Oregon, U.S.A., 1989-1991 [PHOTOGRAPH] Photograph: Forest in the western coastal range of Oregon (click on the photo to view a series of images from the OTTER sites) Data Citation Cite this data set as follows: Waring, R. H., B. Law, and B. Bond. 1999. NPP Temperate Forest: OTTER Project Sites, Oregon, U.S.A., 1989-1991. Data set. Available on-line [http://www.daac.ornl.gov] from Oak Ridge National Laboratory Distributed Active Archive Center, Oak Ridge, Tennessee, U.S.A. Description The Oregon Transect Ecosystem Research Project (OTTER) was conducted to develop a strategy to extrapolate point measurements and estimates of ecosystem structure and function across large geographic regions that varied in climate and vegetation. The full spectrum of remote-sensing data

225

NPP Grassland: Central Plains Experimental Range (SGS), U.S.A.  

NLE Websites -- All DOE Office Websites (Extended Search)

Central Plains Experimental Range (SGS), U.S.A., 1970-1975 Central Plains Experimental Range (SGS), U.S.A., 1970-1975 [PHOTOGRAPH] Photograph: Weather station/exclosure within the CPER site (click on the photo to view a series of images from this site). Data Citation Cite this data set as follows: Uresk, D., P. L. Sims, and J. L. Dodd. 1996. NPP Grassland: Central Plains Experimental Range (SGS), U.S.A., 1970-1975. Data set. Available on-line [http://www.daac.ornl.gov] from Oak Ridge National Laboratory Distributed Active Archive Center, Oak Ridge, Tennessee, U.S.A. Description Productivity of a shortgrass prairie steppe was monitored at the Central Plains Experimental Range (CPER), sometimes referred to as the Pawnee Grassland study site, from 1939 to the present. Measurements of monthly dynamics of above-ground live biomass and dead matter were made from 1970

226

Smeg USA: Proposed Penalty (2011-CE-14/1909) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Proposed Penalty (2011-CE-14/1909) Proposed Penalty (2011-CE-14/1909) Smeg USA: Proposed Penalty (2011-CE-14/1909) April 22, 2011 DOE alleged in a Notice of Proposed Civil Penalty that Smeg USA, Inc. failed to certify a variety of dishwashers and refrigerators as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Smeg USA: Proposed Penalty (2011-CE-14/1909) More Documents & Publications Smeg USA: Order (2011-CE-14/1909) Mitsubishi Electric: Proposed Penalty (2011-CE-01/0202)

227

Reply Comments of T-Mobile USA, Inc. | Department of Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

T-Mobile USA, Inc. T-Mobile USA, Inc. Reply Comments of T-Mobile USA, Inc. T-Mobile USA, Inc. ("T-Mobile") hereby submits these reply comments in response to the above-captioned Request for Information ("RFI")1 issued by the Department of Energy ("DOE"). T-Mobile appreciates the opportunity to submit reply comments and commends the DOE for undertaking a comprehensive examination of the communications requirements necessary to deploy smart grid technology so consumers can experience the full breath of benefits that smart grid can offer, including environmental, public safety, economic growth and expanded broadband into unserved areas. T-Mobile supports the previous commenters who recognize that existing commercial wireless networks, built and operated by commercial wireless providers, are

228

EXC-12-0010- In the Matter of DLU Lighting USA  

Energy.gov (U.S. Department of Energy (DOE))

On September 6, 2012, OHA issued a decision denying an Application for Exception filed by DLU Lighting USA (DLU) for relief from the provisions of 10 C.F.R. Part 430, Energy Conservation Program:...

229

A Comparative Study of Operation of Overseas Schools of Taiwan and USA.  

E-Print Network (OSTI)

??A Comparative Study of Operation of Overseas Schools of Taiwan and USA Tsen-Fei Lin Abstract The study was designed to achieve two goalsGthe first was (more)

Lin, Tsen-fei

2006-01-01T23:59:59.000Z

230

STATE-OF-THE-ART: FLY ASH, SILICA FUME AND SLAG UTILIZATION IN USA  

E-Print Network (OSTI)

Backfill. 1.0 Introduction At the present time, coal fired electric power plants in the USA produce, ease of handling, and moisture insensitivity, etc. [2,11]. 2.1.2 Backfills Fly ash is used

Wisconsin-Milwaukee, University of

231

Global Economic Effects of USA Biofuel Policy and the Potential Contribution from Advanced Biofuels  

Science Conference Proceedings (OSTI)

This study evaluates the global economic effects of the USA renewable fuel standards (RFS2), and the potential contribution from advanced biofuels. Our simulation results imply that these mandates lead to an increase of 0.21 percent in the global gross domestic product (GDP) in 2022, including an increase of 0.8 percent in the USA and 0.02 percent in the rest of the world (ROW); relative to our baseline, no-RFS scenario. The incremental contributions to GDP from advanced biofuels in 2022 are estimated at 0.41 percent and 0.04 percent in the USA and ROW, respectively. Although production costs of advanced biofuels are higher than for conventional biofuels in our model, their economic benefits result from reductions in oil use, and their smaller impacts on food markets compared with conventional biofuels. Thus, the USA advanced biofuels targets are expected to have positive economic benefits.

Gbadebo Oladosu; Keith Kline; Paul Leiby; Rocio Uria-Martinez; Maggie Davis; Mark Downing; Laurence Eaton

2012-01-01T23:59:59.000Z

232

Join us at the Inaugural USA Science and Engineering Festival! | Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

us at the Inaugural USA Science and Engineering Festival! us at the Inaugural USA Science and Engineering Festival! Join us at the Inaugural USA Science and Engineering Festival! October 22, 2010 - 12:00pm Addthis Director Brinkman Director Brinkman Director of the Office of Science What do smart windows and biofuels, climate models and gravity accelerators all have in common? They'll all be part of the Energy Department's exhibits at the inaugural USA Science and Engineering Festival on the National Mall this weekend. The festival overall will feature more than 1,500 fun, hands-on activities and over 75 stage shows. The Energy Department, along with a number of our National Labs will be participating. The Department will host interactive exhibits built around the theme of "Science and Technology: Working Together to Create a Better Future, For

233

In-microbe formation of nucleotide sugars in engineered Escherichia coli  

NLE Websites -- All DOE Office Websites (Extended Search)

microbe microbe formation of nucleotide sugars in engineered Escherichia coli Ting Yang a , Yael Bar-Peled a , James Amor Smith a , John Glushka a , Maor Bar-Peled a,b,⇑ a Complex Carbohydrate Research Center (CCRC), University of Georgia, Athens, GA 30602, USA b Department of Plant Biology, University of Georgia, Athens, GA 30602, USA a r t i c l e i n f o Article history: Received 29 September 2011 Received in revised form 9 December 2011 Accepted 14 December 2011 Available online 20 December 2011 Keywords: Nucleotide sugar metabolism UDP-GalA UDP-Gal UDP-GlcNAcA UDP-XylNAc UDP-Glc 13 C-labeled nucleotide sugar 15 N-labeled nucleotide sugar E. coli In-microbe a b s t r a c t Numerous different nucleotide sugars are used as sugar donors for the biosynthesis of glycans by bacte- ria, humans, fungi, and plants. However, many of these nucleotide sugars are not available either in their native form

234

Non-powered Dams: An untapped source of renewable electricity in the USA  

Science Conference Proceedings (OSTI)

Hydropower has been a source of clean, renewable electricity in the USA for more than 100 years. Today, approximately 2500 US dams provide 78 GW of conventional and 22 GW of pumped-storage hydropower. In contrast, another approximately 80 000 dams in the USA do not include hydraulic turbine equipment and provide non-energy related services, such as flood control, water supply, navigation, and recreation.

Hadjerioua, Boualem [ORNL; Kao, Shih-Chieh [ORNL; Wei, Yaxing [ORNL; Battey, Hoyt [Department of Energy; Smith, Brennan T [ORNL

2012-01-01T23:59:59.000Z

235

Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy. Scanning electron microscopy images show that vertical and uniform GaP NWs and GaP/GaNP core/shell NWs are grown on Si(111). The density ranges from {approx}1 x 10{sup 7} to {approx}5 x 10{sup 8} cm{sup -2} across the substrate. Typical diameters are {approx}110 nm for GaP NWs and {approx}220 nm for GaP/GaNP NWs. Room temperature photoluminescence (PL) signal from the GaP/GaNP core/shell NWs confirms that N is incorporated in the shell and the average N content is {approx}0.9%. The PL low-energy tail is significantly reduced, compared to bulk GaNP.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Li, H. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Tu, C. W. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2012-01-30T23:59:59.000Z

236

Estimating recharge at yucca mountain, nevada, usa: comparison of methods  

Science Conference Proceedings (OSTI)

Obtaining values of net infiltration, groundwater travel time, and recharge is necessary at the Yucca Mountain site, Nevada, USA, in order to evaluate the expected performance of a potential repository as a containment system for high-level radioactive waste. However, the geologic complexities of this site, its low precipitation and net infiltration, with numerous mechanisms operating simultaneously to move water through the system, provide many challenges for the estimation of the spatial distribution of recharge. A variety of methods appropriate for and environments has been applied, including water-balance techniques, calculations using Darcy's law in the unsaturated zone, a soil-physics method applied to neutron-hole water-content data, inverse modeling of thermal profiles in boreholes extending through the thick unsaturated zone, chloride mass balance, atmospheric radionuclides, and empirical approaches. These methods indicate that near-surface infiltration rates at Yucca Mountain are highly variable in time and space, with local (point) values ranging from zero to several hundred millimeters per year. Spatially distributed net-infiltration values average 5 mm/year, with the highest values approaching 20 nun/year near Yucca Crest. Site-scale recharge estimates range from less than I to about 12 mm/year. These results have been incorporated into a site-scale model that has been calibrated using these data sets that reflect infiltration processes acting on highly variable temporal and spatial scales. The modeling study predicts highly non-uniform recharge at the water table, distributed significantly differently from the non-uniform infiltration pattern at the surface. [References: 57

Flint, A. L.; Flint, L. E.; Kwicklis, E. M.; Fabryka-Martin, J. T.; Bodvarsson, G. S.

2001-11-01T23:59:59.000Z

237

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network (OSTI)

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP, or (Al,Ga)As, which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically hole-mediated ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Mn-doped Ga(As,P) is also favorable, as compared to (Al,Ga)As, with respect to the formation of carrier and moment compensating interstitial Mn impurities. In (Ga,Mn) (As,P) we find a marked decrease of the partial concentration of these detrimental impurities with increasing P content.

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

238

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates  

E-Print Network (OSTI)

5221, 34095 Montpellier, France E-mail: pmc53@cam.ac.uk Received October 12, 2012; accepted November 22, 2012; published online May 20, 2013 This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various...

Corfdir, Pierre; Dussaigne, Amlie; Teisseyre, Henryk; Suski, Tadeusz; Grzegory, Izabella; Lefebvre, Pierre; Giraud, Etienne; Shahmohammadi, Mehran; Phillips, Richard; Ganire, Jean-Daniel; Grandjean, Nicolas; Deveaud, Benot

239

Growth orientation dependent photoluminescence of GaAsN alloys  

SciTech Connect

We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal.

Han, Xiuxun; Tanaka, Tomohiro; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan); Sato, Shinichiro [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

2012-01-16T23:59:59.000Z

240

Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

1998-10-14T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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241

Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor  

SciTech Connect

A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ~10 were obtained at 300 degree C.

Abernathy, C.R.; Baca, A.G.; Cao, X.A.; Cho, H.; Dang, G.T.; Donovan, S.M.; Han, J.; Jung, K.B.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Wilson, R.G.; Zhang, A.P.; Zhang, L

1999-03-16T23:59:59.000Z

242

A InGaN/GaN quantum dot green ({lambda}=524 nm) laser  

SciTech Connect

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab [Department of Electrical Engineering and Computer Science, Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2011-05-30T23:59:59.000Z

243

Evaluation of defects and degradation in GaAs-GaAlAs wafers using transmission cathodoluminescence  

Science Conference Proceedings (OSTI)

A large number of GaAs substrates GaAlAs double-heterostructure (DH) wafers, and high-radiance GaAlAs DH light-emitting diodes (LEDS) were evaluated using transmission cathodoluminescence (TCL). We show that only epitaxial wafers with a high defect density as revealed by TCL readily develop dark line defects (DLDs) with current injection, optical excitation, or electron beam excitation. Furthermore, in agreement with the previous work, the electron-beam-induced DLDs originate at dislocations and their growth requires minority-carrier injection. Based on these results, it is inferred that TCL can serve as a nondestructive screening technique for the selection of materials that produces a high yield of reliable LEDs.

Chin, A.K.; Keramidas, V.G.; Johnston, W.D. Jr.; Mahajan, S.; Roccasecca, D.D.

1980-02-01T23:59:59.000Z

244

GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization  

DOE Green Energy (OSTI)

Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. The GaInSb layers were grown by organometallic vapor phase epitaxy (OMVPE) and the InGaAsSb lattice-matched layers were grown by liquid phase epitaxy (LPE). Device fabrication steps include unannealed p-type ohmic contacts, annealed Sn/Au n-type ohmic contacts, and a thick Ag top-surface contact using a lift-off process. Devices are characterized primarily by dark I-V, photo I-V, and quantum efficiency measurements, which are correlated to microscopic and macroscopic material properties. Particular emphasis has been on material enhancements to increase quantum efficiency and decrease dark saturation current density. TPV device performance is presently limited by the base diffusion length, typically 1 to 2 microns.

Hitchcock, C.; Gutmann, R.; Borrego, J.; Ehsani, H.; Bhat, I. [Rensselaer Polytechnic Inst., Troy, NY (United States); Freeman, M.; Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

245

Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells  

Science Conference Proceedings (OSTI)

The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

Baidus, N. V. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Vainberg, V. V. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine); Zvonkov, B. N. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Pylypchuk, A. S., E-mail: pylypchuk@iop.kiev.ua; Poroshin, V. N.; Sarbey, O. G. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine)

2012-05-15T23:59:59.000Z

246

Radiation Hard AlGaN Detectors and Imager  

Science Conference Proceedings (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

247

InGaAs and Ge MOSFETs with high ? dielectrics  

Science Conference Proceedings (OSTI)

InGaAs and Ge MOSFETs with high @k's are now the leading candidates for technology beyond the 15nm node CMOS. The UHV-Al"2O"3/Ga"2O"3(Gd"2O"3) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities ... Keywords: Atomic layer deposition, Germanium, High ? dielectrics, III-V Compound semiconductor, MOSFETs, Molecular beam epitaxy

W. C. Lee; P. Chang; T. D. Lin; L. K. Chu; H. C. Chiu; J. Kwo; M. Hong

2011-04-01T23:59:59.000Z

248

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys ...  

Science Conference Proceedings (OSTI)

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys Based on the ... Resources for the Selection and Use of Interatomic Potentials in Atomistic...

249

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

contractors supported the dismantlement including asbestos removal and concrete cutting, electrical, and HVAC. Project support functions were provided by GA organizations...

250

Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 {mu}m  

Science Conference Proceedings (OSTI)

Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 {mu}m when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 Degree-Sign C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts.

Ye Hong; Song Yuxin; Wang Shumin [Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296 (Sweden); Gu Yi [Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2012-12-15T23:59:59.000Z

251

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots  

Science Conference Proceedings (OSTI)

In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation.

Gargallo-Caballero, R.; Guzman, A.; Ulloa, J. M.; Hierro, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM)-Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Hopkinson, M. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Luna, E.; Trampert, A. [Paul Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2012-04-15T23:59:59.000Z

252

Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb  

DOE Green Energy (OSTI)

GaSb and InGaSb have been demonstrated to be suitable choices for high efficiency thermophotovoltaic (TPV) cells. Synthesis and growth of bulk GaSb single crystals and GaInSb polycrystals have been carried out by the vertical Bridgman technique, with a baffle immersed in the melt and by complete encapsulation of the melt by low melting temperature alkali halides or oxides. The critical roles of the baffle and the encapsulation are discussed. Efforts in obtaining device grade GaSb with superior structural and electrical properties and compositionally homogeneous GaInSb are described, emphasizing the key steps in the growth cycle developed to obtain good crystalline quality.

Dutta, P.S.; Ostrogorsky, A.G.; Gutmann, R.J.

1997-05-01T23:59:59.000Z

253

P8, Fabrication of Subwavelength Pillar Arrays on GaAs by Confined ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

254

II4, Compositionally-Graded Layers Composed of Tandem InGaAs ...  

Science Conference Proceedings (OSTI)

The specification of the 6 miscut is important because it provides step ..... of Metamorphic InGaP on GaAs and GaP for Wide-Bandgap Photovoltaic Junctions.

255

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm, Mingwei Zhu  

E-Print Network (OSTI)

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm in nonpolar light-emitting diodes (LEDs) covering the blue to green spectral range. In photo- luminescence, m's overall power efficiency. Linearly polarized light can be efficiently generated in GaInN/GaN-based light-emitting

Wetzel, Christian M.

256

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. (Research Triangle Inst., Research Triangle Park, NC (United States))

1993-01-01T23:59:59.000Z

257

Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor  

Science Conference Proceedings (OSTI)

Keywords: Ga vacancies, GaN growth, gas feeding method, optical property, rapid thermal chemical vapor deposition (RTCVD), yellow luminescence

Sun Jung Kim; Young Hun Seo; Kee Suk Nahm; Yun Bong Hahn; Hyun Wook Shim; Eun-Kyung Suh; Kee Young Lim; Hyung Jae Lee

1999-08-01T23:59:59.000Z

258

Functional Imprinting Structures on GaN-Based Light-Emitting ...  

Science Conference Proceedings (OSTI)

Keywords: GaN, light-emitting diode (LED), imprinting technology, far-field pattern modulation, light extraction. 1. Introduction. GaN-based light-emitting diodes...

259

The structure and mode of action of Caldicellulosiruptor bescii family 3 pectate lyase in biomass deconstruction  

NLE Websites -- All DOE Office Websites (Extended Search)

534 534 doi:10.1107/S0907444912050512 Acta Cryst. (2013). D69, 534-539 Acta Crystallographica Section D Biological Crystallography ISSN 0907-4449 The structure and mode of action of Caldicellulosiruptor bescii family 3 pectate lyase in biomass deconstruction Markus Alahuhta, a Roman Brunecky, a Puja Chandrayan, b Irina Kataeva, b Michael W. W. Adams, b Michael E. Himmel a and Vladimir V. Lunin a * a Biosciences Center, National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, CO 80401-3305, USA, and b Department of Biochemistry and Molecular Biology, University of Georgia, Athens, GA 30602-7229, USA Correspondence e-mail: vladimir.lunin@nrel.gov # 2013 International Union of Crystallography Printed in Singapore - all rights reserved The unique active site of the Caldicellulosiruptor bescii family 3 pectate lyase catalytic module (PL3-cat) has been structu-

260

Xu Y. Computational  

NLE Websites -- All DOE Office Websites (Extended Search)

Xu Xu Y. Computational challenges in deciphering genomic structures of bacteria. JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY 25(1): 53-70 Jan. 2010 Computational Challenges in Deciphering Genomic Structures of Bacteria Ying Xu (Å ) Computational Systems Biology Laboratory, Department of Biochemistry and Molecular Biology and Institute of Bioinformatics, The University of Georgia, Athens, GA 30602, U.S.A. BESC BioEnergy Science Center, U.S.A. College of Computer Science and Technology, Jilin University, Changchun 130012, China E-mail: xyn@bmb.uga.edu Received October 1, 2009; revised November 16, 2009. Abstract This article addresses how the functionalities of the cellular machinery of a bacterium might have constrained the genomic arrangement of its genes during evolution and how we can study such problems using computational approaches, taking full advantage

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

A 1.5 A resolution X-ray structure of the catalytic module of Caldicellulosiruptor bescii family 3 pectate lyase  

NLE Websites -- All DOE Office Websites (Extended Search)

1498 1498 doi:10.1107/S1744309111038449 Acta Cryst. (2011). F67, 1498-1500 Acta Crystallographica Section F Structural Biology and Crystallization Communications ISSN 1744-3091 A 1.5 A ˚ resolution X-ray structure of the catalytic module of Caldicellulosiruptor bescii family 3 pectate lyase Markus Alahuhta, a Puja Chandrayan, b Irina Kataeva, b Michael W. W. Adams, b Michael E. Himmel a and Vladimir V. Lunin a * a BioSciences Center, National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401, USA, and b Department of Biochemistry and Molecular Biology, University of Georgia, Athens, GA 30602-7229, USA Correspondence e-mail: vladimir.lunin@nrel.gov Received 17 August 2011 Accepted 19 September 2011 PDB Reference: family 3 pectate lyase catalytic module, 3t9g. A 1.5 A ˚ resolution X-ray structure of the catalytic module of Caldicellulosi- ruptor bescii

262

Large-Scale Analyses of Glycosylation in Cellulases  

NLE Websites -- All DOE Office Websites (Extended Search)

Article Article Large-Scale Analyses of Glycosylation in Cellulases Fengfeng Zhou 1,2 , Victor Olman 1,2 , and Ying Xu 1,2 * 1 Computational Systems Biology Laboratory, Department of Biochemistry and Molecular Biology / Institute of Bioinformatics, University of Georgia, Athens, GA 30602-7229, USA; 2 BioEnergy Science Center, Oak Ridge National Laboratory, Oak Ridge, TN 37830-8050, USA. *Corresponding author. E-mail: xyn@bmb.uga.edu DOI: 10.1016/S1672-0229(08)60049-2 Cellulases are important glycosyl hydrolases (GHs) that hydrolyze cellulose poly- mers into smaller oligosaccharides by breaking the cellulose β (1→4) bonds, and they are widely used to produce cellulosic ethanol from the plant biomass. N-linked and O-linked glycosylations were proposed to impact the catalytic ef f iciency, cel- lulose binding af f inity and the stability of cellulases based on observations

263

1471-2164-10-14.fm  

NLE Websites -- All DOE Office Websites (Extended Search)

9 9 (page number not for citation purposes) BMC Genomics Open Access Database RepPop: a database for repetitive elements in Populus trichocarpa Fengfeng Zhou 1,2 and Ying Xu* 1,2 Address: 1 Computational Systems Biology Laboratory, Department of Biochemistry and Molecular Biology, and Institute of Bioinformatics, University of Georgia, Athens, GA 30602, USA and 2 BioEnergy Science Center, Tennessee, USA Email: Fengfeng Zhou - ffzhou@csbl.bmb.uga.edu; Ying Xu* - xyn@bmb.uga.edu * Corresponding author Abstract Background: Populus trichocarpa is the first tree genome to be completed, and its whole genome is currently being assembled. No functional annotation about the repetitive elements in the Populus trichocarpa genome is currently available. Results: We predicted 9,623 repetitive elements in the Populus trichocarpa genome, and assigned

264

OP-NARE131048 1..6  

NLE Websites -- All DOE Office Websites (Extended Search)

DOOR DOOR 2.0: presenting operons and their functions through dynamic and integrated views Xizeng Mao 1,2 , Qin Ma 1,2 , Chuan Zhou 1,3 , Xin Chen 1,4 , Hanyuan Zhang 1,4 , Jincai Yang 5 , Fenglou Mao 1 , Wei Lai 1 and Ying Xu 1,2,4, * 1 Computational Systems Biology Laboratory, Department of Biochemistry and Molecular Biology, and Institute of Bioinformatics, University of Georgia, Athens, GA 30602, USA, 2 BioEnergy Science Center (BESC), Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA, 3 School of Mathematics, Shandong University, Jinan, Shandong 250100, China, 4 College of Computer Science and Technology, Jilin University, Changchun, Jilin 130012, China and 5 College of Computer Science, Central China Normal University, Wuhan, Hubei 430079, China Received September 1, 2013; Revised October 10, 2013; Accepted October 11, 2013 ABSTRACT We have recently developed a new

265

Bonding and gap states at GaAs-oxide interfaces  

Science Conference Proceedings (OSTI)

The nature of bonding and possible causes of Fermi level pinning at high mobility-high dielectric constant oxide GaAs:HfO"2 interfaces are discussed. It is argued that these are atoms with defective bonding, rather than states due to the bulk semiconductor ... Keywords: GaAs, bonding, interface

John Robertson; Liang Lin

2011-04-01T23:59:59.000Z

266

Elastic properties of Pu metal and Pu-Ga alloys  

Science Conference Proceedings (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

267

RECORD OF CATEGORICAL EXCLUSION DETERMINATION CHEVRON U.s.A. INC.  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

CHEVRON U.s.A. INC. CHEVRON U.s.A. INC. FE DOCKET NO. lO-114-LNG PROPOSED ACTIONS: Chevron U.S.A. Inc. (Chevron), a Pennsylvania corporation, filed an application with the Office of Fossil Energy (FE) on Sept ember 9,2010, seeking authorization to export liquefied natural gas (LNG) from the Sabine Pass LNG Terminal in Cameron Parish, Louisiana to any country not prohibited by u.s. law or policy. The Application was submitted pursuant to section 3 of the Natura l Gas Act and 10 CFR part 590 of the Department of Energy's (DOE) regulations. No new facilities or modification to any existing fa cilities at the Sabine Pass LNG Terminal are required in order for Chevron to export LNG from that facility. CATEGORICAL EXCLUSION TO BE APPLIED: Under the above circumstances, DOE's NEPA procedures

268

USA Manufacturing Respondent BEFORE THE U.S. DEPARTMENT OF ENERGY  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

USA Manufacturing USA Manufacturing Respondent BEFORE THE U.S. DEPARTMENT OF ENERGY WASHINGTON, D.C. 20585 ) ) ) ) ) ) ORDER Case Number: 2013-CE-5336 By the General Counsel, U.S. Department of Energy: I. In this Order, I adopt the attached Compromise Agreement entered into between the U.S. Department ofEnet'gy ("DOE") and USA Manufacturing ("Respondent"). The Compromise Agreement resolves the case initiated to pursue a civil penalty for violations of the compliance certification requirements located at 10 C.P.R.§§ 429.12 and 429.53. 2. DOE and Respondent have negotiated the terms of the Compromise Agreement that resolve this matter. A copy of the Compromise Agreement is attached hereto and incorporated by reference. 3. After reviewing the terms of the Compromise Agreement and evaluating the facts

269

USA RS Basic Contract - Contract No.: DE-RW0000005 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

USA RS Basic Contract - Contract No.: DE-RW0000005 USA RS Basic Contract - Contract No.: DE-RW0000005 USA RS Basic Contract - Contract No.: DE-RW0000005 This document describes the Statement of Work (SOW) of the Management and Operating Contractor (M&O) Contract for the U.S. Department of Energy (DOE), Office of Civilian Radioactive Waste Management (OCRWM) Program's Yucca Mountain Project (YMP). An M&O contract is defined at Federal Acquisition Regulation (FAR) 17.6 and Department of Energy Acquisition Regulation (DEAR) 970. Inasmuch as the assigned mission of OCRWM YMP is dynamic, this SOW is not intended to be exclusive or restrictive, but is intended to provide a broad framework and general scope of work to be performed by the M&O. This SOW does not represent a commitment to, or imply funding for, specific projects

270

Prospects For Electricity Generation In The San Luis Basin, Colorado, Usa |  

Open Energy Info (EERE)

Prospects For Electricity Generation In The San Luis Basin, Colorado, Usa Prospects For Electricity Generation In The San Luis Basin, Colorado, Usa Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Conference Paper: Prospects For Electricity Generation In The San Luis Basin, Colorado, Usa Details Activities (2) Areas (1) Regions (0) Abstract: The San Luis basin is the largest and deepest basin in the Neogene Rio Grande rift, and has many similarities to the basins of the US Basin and Range Province. It is asymmetric with a displacement of as much as 9 km on its eastern margin, and approximately 6.4 km of sedimentary rocks of late Oligocene or younger age in the deepest portion of the basin. Temperature measurements in shallow wells in the northern basin have an average geothermal gradient of 59.0 ± 11.8°C km-1 (± standard

271

A Map Of Geothermal Potential For The Great Basin, Usa- Recognition Of  

Open Energy Info (EERE)

Of Geothermal Potential For The Great Basin, Usa- Recognition Of Of Geothermal Potential For The Great Basin, Usa- Recognition Of Multiple Geothermal Environments Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Conference Paper: A Map Of Geothermal Potential For The Great Basin, Usa- Recognition Of Multiple Geothermal Environments Details Activities (8) Areas (4) Regions (0) Abstract: A 1:1,000,000 scale geothermal favorability map of the Great Basin is currently being published through the Nevada Bureau of Mines and Geology (NBMG) and is now available at the web site (http://www.unr.edu/geothermal/geothermal_gis2. htm) of the Great Basin Center for Geothermal Energy (GBCGE). This map allows for separate assessment of the potential for magmatically heated and extensional-type geothermal systems. Added to the map are temperature gradient wells from

272

Electric Car Featuring High-Tech Material Made in the USA Makes Its Debut |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Electric Car Featuring High-Tech Material Made in the USA Makes Its Electric Car Featuring High-Tech Material Made in the USA Makes Its Debut Electric Car Featuring High-Tech Material Made in the USA Makes Its Debut September 24, 2013 - 3:01pm Addthis Carbon fiber material produced at SGL Automotive Carbon Fibers in Moses Lake, Wash. (Photo courtesy of SGL Automotive Carbon Fibers) Carbon fiber material produced at SGL Automotive Carbon Fibers in Moses Lake, Wash. (Photo courtesy of SGL Automotive Carbon Fibers) Carbon fiber under production at SGL Automotive Carbon Fibers. The facility's construction resulted in 200 jobs. (Photo courtesy of SGL Automotive Carbon Fibers) Carbon fiber under production at SGL Automotive Carbon Fibers. The facility's construction resulted in 200 jobs. (Photo courtesy of SGL Automotive Carbon Fibers)

273

Exploration In A Blind Geothermal Area Near Marysville, Montana, Usa | Open  

Open Energy Info (EERE)

In A Blind Geothermal Area Near Marysville, Montana, Usa In A Blind Geothermal Area Near Marysville, Montana, Usa Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Journal Article: Exploration In A Blind Geothermal Area Near Marysville, Montana, Usa Details Activities (7) Areas (1) Regions (0) Abstract: Extensive geological and geophysical studies were carried out during the summer of 1973 in a blind geothermal area near Marysville, Montana. Earlier studies of regional heat flow resulted in the discovery of the area (BLACKWELL 1969; BLACKWELL, BAAG 1973). The area is blind in the sense that there are no surface manifestations of high heat flow (recent volcanics, hot springs, etc.) within the area. The country rocks are Precambrian sedimentary rocks and Mesozoic and Tertiary intrusive rocks. The most recent Tertiary igneous event took place approximately 37 M.Y.

274

Evolution Of Hydrothermal Waters At Mount St Helens, Washington, Usa | Open  

Open Energy Info (EERE)

Evolution Of Hydrothermal Waters At Mount St Helens, Washington, Usa Evolution Of Hydrothermal Waters At Mount St Helens, Washington, Usa Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Journal Article: Evolution Of Hydrothermal Waters At Mount St Helens, Washington, Usa Details Activities (4) Areas (1) Regions (0) Abstract: Hydrothermal water samples at Mount St. Helens collected between 1985 and 1989 and in 1994 are used to identify water types and describe their evolution through time. Two types of low temperature hydrothermal systems are associated with the 1980 eruptions and were initiated soon after emplacement of shallow magma and pyroclastic flows. The Loowit hot spring system is located in the breach zone and is associated with the magma conduit and nearby avalanche deposits, whereas the Pumice Plain (PP)

275

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network (OSTI)

be applicable to light sources in fiber-optic communication systems.13 However, there have been no reports intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

276

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells  

E-Print Network (OSTI)

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells J. Schörmann,a S and multiple quantum wells. The well widths ranged from 2.5 to 7.5 nm. Samples were grown by rf-plasma assisted wells clear reflection high energy electron diffraction oscillations were observed indicating a two

As, Donat Josef

277

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

278

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN  

E-Print Network (OSTI)

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN Christian in green light emitting diodes is one of the big challenges towards all-solid- state lighting. The prime,3], and commercialization [4,5] of high brightness light emitting diodes LEDs has led to a 1.82 Billion-$/year world market

Detchprohm, Theeradetch

279

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network (OSTI)

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

280

Geology and thermal regime, geothermal test USA No. 11-36, Grass Valley, Nevada  

DOE Green Energy (OSTI)

This report summarizes the results of drilling of an 8,565 foot geothermal test near Leach Hot Springs, Pershing County, Nevada, by Sunoco Energy Development Company. USA No.11-36 is located 500 feet south and 500 feet east of the northwest corner of Section 36, T. 32 N., R. 38 E (Mount Diablo Meridian), elevation 4,573 feet. It was drilled between May 15 and July 2, 1980. USA No.11-36 was deemed unsuccessful, having encountered no temperature higher than 270 F and no significant permeability, and was plugged and abandoned without testing prior to releasing the rig.

Wilde, Walter R.; Koenig, James B.

1980-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells  

Science Conference Proceedings (OSTI)

We investigate the incorporation of nitrogen into (Ga,In)Sb grown on GaSb and report room temperature photoluminescence from GaInSb(N) quantum wells. X-ray diffraction and channeling nuclear reaction analysis, together with Rutherford backscattering, were employed to identify the optimal molecular beam epitaxial growth conditions that minimized the incorporation of non-substitutional nitrogen into GaNSb. Consistent with this hypothesis, GaInSb(N) quantum wells grown under the conditions that minimized non-substitutional nitrogen exhibited room temperature photoluminescence, indicative of significantly improved radiative efficiency. Further development of this material system could enable type-I laser diodes emitting throughout the (3-5 {mu}m) wavelength range.

Nair, Hari P.; Crook, Adam M.; Bank, Seth R. [Microelectronics Research Center, Electrical and Computer Engineering, University of Texas at Austin, 10100 Burnet Rd, Austin, Texas 78712 (United States); Yu, Kin M. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2012-01-09T23:59:59.000Z

282

GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy  

Science Conference Proceedings (OSTI)

We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments.

Smakman, E. P.; Garleff, J. K.; Rambabu, P.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5612 AZ (Netherlands); Young, R. J.; Hayne, M. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2012-04-02T23:59:59.000Z

283

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

DOE Green Energy (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

284

Proceedings, World Of Coal Ash, April 11-15, 2005, Lexington, KY, USA Pultrusion of Fabric Reinforced High Flyash  

E-Print Network (OSTI)

Proceedings, World Of Coal Ash, April 11-15, 2005, Lexington, KY, USA Pultrusion of Fabric Reinforced High Flyash Blended Cement Composites Barzin Mobasher(1) , Alva Peled (2) , and Jitendra of elasticity. #12;Proceedings, World Of Coal Ash, April 11-15, 2005, Lexington, KY, USA In addition to ease

Mobasher, Barzin

285

Dielectrics for GaN based MIS-diodes  

SciTech Connect

GaN MIS diodes were demonstrated utilizing AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as insulators. A 345 {angstrom} of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) growth, a multi MBE chamber was used and a 195 {angstrom} oxide is E-beam evaporated from a single crystal source of Ga{sub 5}Gd{sub 3}O{sub 12}. The forward breakdown voltage of AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) diodes are 5V and 6V, respectively, which are significantly improved from {approximately} 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.

Ren, F.; Abernathy, C.R.; MacKenzie, J.D. [Univ. of Florida, Gainesville, FL (United States)] [and others

1998-02-01T23:59:59.000Z

286

Texas earthquakes may be linked to wells for gas mining By Dan Vergano, USA TODAY  

E-Print Network (OSTI)

Texas earthquakes may be linked to wells for gas mining By Dan Vergano, USA TODAY -- Saltwater study. "We usually only get small ones." Some suspicions centered on wells involved in "hydraulic. About 13 fracture wells have been drilled since 2002 near the locale, but the team found the epicenter

Huang, Shaopeng

287

SOIL TEST CALIBRATION WORK IN SOUTHERN USA Leticia S. Sonon and Hailin Zhang  

E-Print Network (OSTI)

SOIL TEST CALIBRATION WORK IN SOUTHERN USA Leticia S. Sonon and Hailin Zhang Introduction Sound soil test calibration is essential for successful fertilization program and crop production. It is essential that the results of soil tests be calibrated against crop responses from applications of the plant

288

Hot Dry Rock Geothermal Energy Development in the USA David Duchane and Donald Brown  

E-Print Network (OSTI)

utility options such as pumped storage or compressed air energy storage (CAES) is that the HDR power plant1 Hot Dry Rock Geothermal Energy Development in the USA by David Duchane and Donald Brown Los energy resources lies right beneath our feet in the form of hot dry rock (HDR), the common geologic

289

NIL PHENOMENA IN TOPOLOGY (1415 APRIL 2007) VANDERBILT UNIVERSITY (NASHVILLE, TN U.S.A.)  

E-Print Network (OSTI)

. Consider the cartesian square Z[G] // Z[G]/ // /n. 1 #12;2 B. HUGHES, Q. KHAN (ORGANIZERS); I. HAMBLETONNIL PHENOMENA IN TOPOLOGY (14­15 APRIL 2007) VANDERBILT UNIVERSITY (NASHVILLE, TN U.S.A.) PROBLEM SESSION BRUCE HUGHES, QAYUM KHAN (ORGANIZERS) IAN HAMBLETON (MODERATOR) IO. (Ivonne Ortiz, Miami of Ohio

Hughes, Bruce

290

Estimating forest biomass in the USA using generalized allometric models and MODIS land products  

E-Print Network (OSTI)

Estimating forest biomass in the USA using generalized allometric models and MODIS land products 2006; published 11 May 2006. [1] Spatially-distributed forest biomass components are essential to understand carbon cycle and the impact of biomass burning emissions on air quality. We estimated the density

Kuligowski, Bob

291

15th North American Waste to Energy Conference May 21-23, 2007, Miami, Florida USA  

E-Print Network (OSTI)

15th North American Waste to Energy Conference May 21-23, 2007, Miami, Florida USA NAWTEC15 Technology Officer, Von Roil inova Alfred Sigg, Head of Research & Development, Von Roil inova Abstract: Von further treatment. In instances where extremely high contaminant loadings are expected (usually due

Columbia University

292

Applying Remote Sensing to Paleontology Studies in the State of Arizona, USA. Alberto Jimnez1  

E-Print Network (OSTI)

Applying Remote Sensing to Paleontology Studies in the State of Arizona, USA. Alberto Jiménez1 1 of remote sensing in the last decade have proven to be quite essential in its widespread use in geology: Remote sensing, paleontology, prospecting, Arizona, Landsat, ETM+ INTRODUCTION Improvements

Gilbes, Fernando

293

Remote monitoring of hypersaline environments in San Francisco Bay, CA, USA  

Science Conference Proceedings (OSTI)

As part of a historic remediation project, approximately 61km2 of salt evaporation ponds in the southern portion of San Francisco Bay, CA (USA) are scheduled for restoration to natural tidal marsh habitat over the next several decades. We have ...

J. B. Dalton; L. J. Palmer-Moloney; D. Rogoff; C. Hlavka; C. Duncan

2009-01-01T23:59:59.000Z

294

12th North American Waste to Energy Conference May 17-19, 2004, Savannah, Georgia USA  

E-Print Network (OSTI)

the generation of electrical energy from those fractions of wastes that cannot be economically reused or recycled-established computational fluid dynamic codes (CFD). Previously, there has not been available a validated, comprehensive12th North American Waste to Energy Conference May 17-19, 2004, Savannah, Georgia USA NAWTEC12

Columbia University

295

Proceedings of the 2013 Joint Rail Conference April 15-18, 2013, Knoxville, Tennessee, USA  

E-Print Network (OSTI)

of the world due to the prominence of rail freight transportation and shared infrastructure between heavy haul and cumulative freight tonnages, coupled with increased development of high speed passenger rail, is placingProceedings of the 2013 Joint Rail Conference JRC2013 April 15-18, 2013, Knoxville, Tennessee, USA

Barkan, Christopher P.L.

296

Atomic hydrogen cleaning of polarized GaAs photocathodes  

DOE Green Energy (OSTI)

Atomic hydrogen cleaning followed by heat cleaning at 450 C was used to prepare negative-electron-affinity GaAs photocathodes. When hydrogen ions were eliminated, quantum efficiencies of 15% were obtained for bulk GaAs cathodes, higher than the results obtained using conventional 600 C heat cleaning. The low-temperature cleaning technique was successfully applied to thin, strained GaAs cathodes used for producing highly polarized electrons. No depolarization was observed even when the optimum cleaning time of about 30 seconds was extended by a factor of 100.

Maruyama, Takashi

2003-04-03T23:59:59.000Z

297

Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-08-01T23:59:59.000Z

298

On-Sun Comparison of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

This study compares the on-sun performance of a set of GaInP2/GaAs tandem cells with different GaInP2 top-cell thicknesses. Because high-efficiency III-V cells are best suited to concentrating photovoltaic (CPV) applications, the cells were mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for an ''air mass 1.5 global'' (AM 1.5G) or a ''low aerosol optical depth'' (Low AOD) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra to predict the correct result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emery, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-02-01T23:59:59.000Z

299

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells  

E-Print Network (OSTI)

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells H. C. Chui, S. M. Lord report the first observation of intersubband transitions in In,Ga, -#s(y=O.3,0.5)/ AlGaAs quantum wells. These quantum wells were grown on a GaAs substrate with a linearly graded InGaAs buffer to achieve strain

Fejer, Martin M.

300

Uranium 238U/235U isotope ratios as indicators of reduction: Results from an in situ biostimulation experiment at Rifle, Colorado, USA  

E-Print Network (OSTI)

tailings site at Rifle, Colorado. Environ. Sci. Technol;Experiment at Rifle, Colorado, U.S.A. Charles John Bopp IV*,Challenge Site in Rifle, Colorado (USA). An array of

Bopp IV, C.J.

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer  

Science Conference Proceedings (OSTI)

We investigate the strain properties of GaN films grown by plasma-assisted molecular beam epitaxy on Si(110) substrates. It is found that the strain of the GaN film can be converted from a tensile to a compressive state simply by inserting a thin AlN/GaN superlattice structure (SLs) within the GaN film. The GaN layers seperated by the SLs can have different strain states, which indicates that the SLs plays a key role in the strain modulation during the growth and the cooling down processes. Using this simple technique, we grow a crack-free GaN film exceeding 2-{mu}m-thick. The realization of the compressively strained GaN film makes it possible to grow thick GaN films without crack generation on Si substrates for optic and electronic device applications.

Shen, X. Q.; Takahashi, T.; Kawashima, H.; Ide, T.; Shimizu, M. [Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568 (Japan)

2012-07-16T23:59:59.000Z

302

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network (OSTI)

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

303

Energy Efficiency and Conservation Block Grant Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-City-Athens-Clarke, Unified Government of GA-City-Athens-Clarke, Unified Government of Location: City Athens-Clarke, Unified Government of GA American Recovery and Reinvestment Act: Proposed Action or Project Description: 1) Develop the Energy Efficiency and Conservation Strategy, 2) conduct energy audits (approval for audits only excludes implementation), 3) indoor and outdoor lighting retrofits at several government facilities, 4) replace natural gas water heater systems on government facilities, 5) replace warning light assemblies at schools in Athens-Clarke County, 6) install a roof-mounted photovoltaic system at the Athens-Clark County Multi-Modal Transportation Center, and 7) replace HVAC system at Data Processing Center. Conditions: None Categorical Exclusion(s) Applied: A9, A11, B1.32,

304

Energy Efficiency and Conservation Block Grant Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-City-Athens-Clarke, Unified Government of GA-City-Athens-Clarke, Unified Government of Location: City Athens-Clarke, Unified Government of GA American Recovery and Reinvestment Act: Proposed Action or Project Description 1) Develop the Energy Efficiency and Conservation Strategy, 2) conduct energy audits (approval for audits only excludes implementation), 3) indoor and outdoor lighting retrofits at several government facilities, 4) replace natural gas water heater systems on government facilities, 5) replace warning light assemblies at schools in Athens-Clarke County, and 6) install a roof-mounted photovoltaic system at the Athens-Clark County Multi-Modal Transportation Center Conditions: None Categorical Exclusion(s) Applied: A9, A11, B1.32, B2.5, B5.1 *-For the complete DOE National Environmental Policy Act regulations regarding categorical exclusions, see Subpart D of 10 CFR10 21

305

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

306

Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep...

307

Lattice vibrations of pure and doped GaSe  

Science Conference Proceedings (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

308

HH5, Antiferromagnetic Interlayer Exchange Couplings in Ga  

Science Conference Proceedings (OSTI)

Author(s), Sun Jae Chung, Sanghoon Lee, Brian J. Kirby, Julie A. Borchers, ... LATE NEWS: KK3, Non-Catalytic Synthesis of GaN Nanostructures at Low...

309

Preparation of GaAs photocathodes at low temperature  

SciTech Connect

The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has a number of disadvantages. Here, a variety of cleaning techniques related to preparation of an atomically clean GaAs surface without heating to 600 C are discussed and evaluated.

Mulhollan, G.; Clendenin, J.; Tang, H.

1996-10-01T23:59:59.000Z

310

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Trinidad and Tobago (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul...

311

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

312

Elba Island, GA Liquefied Natural Gas Total Imports (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Total Imports (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Total Imports (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5...

313

GaAs Films Prepared by RF-Magnetron Sputtering  

DOE Green Energy (OSTI)

The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

2001-08-01T23:59:59.000Z

314

Micro Raman Spectroscopy of Annealed Erbium Implanted GaN  

E-Print Network (OSTI)

Wurtzite GaN epilayers grown by metal organic chemical vapor deposition on sapphire substrates were subsequently ion implanted with Er to a dose of 510? cm?. The implanted samples were annealed in nitrogen atmosphere ...

Vajpeyi, Agam P.

315

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Equatorial Guinea (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Equatorial Guinea (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

316

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Nigeria (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Nigeria (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

317

Cathodoluminescence Microanalysis of Suspended GaN Nano ...  

Science Conference Proceedings (OSTI)

CL from bulk GaN is dominated by the ~3.4 eV near-band-edge emission. In contrast, the suspended nano-membranes emit a broad defect associated emission...

318

BB2, Novel Cs-Free GaN Photocathodes  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

319

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN  

Science Conference Proceedings (OSTI)

We investigate, via time-resolved photoluminescence, the temperature-dependence of charge carrier recombination mechanisms in nonpolar (Al,Ga)N/GaN single quantum wells (QWs) grown via molecular beam epitaxy on the a-facet of bulk GaN crystals. We study the influence of both QW width and barrier Al content on the dynamics of excitons in the 10-320 K range. We first show that the effective lifetime of QW excitons {tau} increases with temperature, which is evidence that nonradiative mechanisms do not play any significant role in the low-temperature range. The temperature range for increasing {tau} depends on the QW width and Al content in the (Al,Ga)N barriers. For higher temperatures, we observe a reduction in the QW emission lifetime combined with an increase in the decay time for excitons in the barriers, until both exciton populations get fully thermalized. Based on analysis of the ratio between barrier and QW emission intensities, we demonstrate that the main mechanism limiting the radiative efficiency in our set of samples is related to nonradiative recombination in the (Al,Ga)N barriers of charge carriers that have been thermally emitted from the QWs.

Corfdir, P.; Dussaigne, A.; Giraud, E.; Ganiere, J.-D.; Grandjean, N.; Deveaud-Pledran, B. [Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Teisseyre, H. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Suski, T.; Grzegory, I. [Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Lefebvre, P. [Laboratoire Charles Coulomb - UMR5221 - CNRS - Universite Montpellier 2, 34095 Montpellier (France)

2012-02-01T23:59:59.000Z

320

EdUI: A Nascent Educational Informatics System at the University of Idaho Fritz R. Fiedler, Civil Engineering, University of Idaho, USA, fritz@uidaho.edu  

E-Print Network (OSTI)

EdUI: A Nascent Educational Informatics System at the University of Idaho Fritz R. Fiedler, Civil Engineering, University of Idaho, USA, fritz@uidaho.edu Steven Taylor, Civil Engineering, University of Idaho, USA, staylor@uidaho.edu Michael Dixon, Civil Engineering, University of Idaho, USA, mdixon

Fiedler, Fritz R.

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Modeling of InGaSb thermophotovoltaic cells and materials  

DOE Green Energy (OSTI)

A closed form computer program has been developed for the simulation and optimization of In{sub x}Ga{sub 1{minus}x}Sb thermophotovoltaic cells operating at room temperature. The program includes material parameter models of the energy bandgap, optical absorption constant, electron and hole mobility, intrinsic carrier concentration and index of refraction for any composition of GaInSb alloys.

Zierak, M.; Borrego, J.M.; Bhat, I.; Gutmann, R.J. [Rensselaer Polytechnic Inst., Troy, NY (United States); Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

322

SEU design consideration for MESFETs on LT GaAs  

SciTech Connect

Computer simulation results are reported on transistor design and single-event charge collection modeling of metal-semiconductor field effect transistors (MESFETs) fabricated in the Vitesse H-GaAsIII{reg_sign} process on Low Temperature grown (LT) GaAs epitaxial layers. Tradeoffs in Single Event Upset (SEU) immunity and transistor design are discussed. Effects due to active loads and diffusion barriers are examined.

Weatherford, T.R.; Radice, R.; Eskins, D. [Naval Postgraduate School, Monterey, CA (United States)] [and others

1997-12-01T23:59:59.000Z

323

Influence of defect formation as a result of incorporation of a Mn {delta} layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells  

Science Conference Proceedings (OSTI)

The influence of defect formation upon the deposition of a Mn {delta} layer and a GaAs coating layer (with the use of laser evaporation) on the photosensitivity spectra of heterostructures with InGaAs/GaAs quantum wells located in the near-surface region has been studied.

Gorshkov, A. P., E-mail: gorskovap@phys.unn.ru; Karpovich, I. A.; Pavlova, E. D.; Kalenteva, I. L. [Lobachevsky State University of Nizhny Novgorod (Russian Federation)

2012-02-15T23:59:59.000Z

324

Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells  

Science Conference Proceedings (OSTI)

Exciton photoluminescence spectra, photoluminescence excitation spectra, and magnetophotoluminescence spectra of single (GaAs/AlGaAs/ZnMnSe) and double (GaAs/AlGaAs/ZnSe/ZnCdMnSe) heterovalent quantum wells formed by molecular beam epitaxy are studied. It is shown that the exciton absorption spectrum of such quantum wells mainly reproduces the resonant exciton spectrum expected for usual quantum wells with similar parameters, while the radiative exciton recombination have substantial distinctions, in particular the additional localization mechanism determined by defects generated by heterovalent interface exists. The nature of these localization centers is not currently clarified; their presence leads to broadening of photoluminescence lines and to an increase in the Stokes shift between the peaks of luminescence and absorption, as well as determining the variation in the magnetic g factor of bound exciton complexes.

Toropov, A. A., E-mail: toropov@beam.ioffe.ru; Kaibyshev, V. Kh.; Terent'ev, Ya. V.; Ivanov, S. V.; Kop'ev, P. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2011-02-15T23:59:59.000Z

325

Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires  

SciTech Connect

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on a Si substrate by molecular beam epitaxy are examined using a variety of optical characterization techniques, including cw- and time-resolved photoluminescence and optically detected magnetic resonance (ODMR). Superior optical quality of the structures is demonstrated based on the observation of intense emission from a single NW at room temperature. This emission is shown to originate from radiative transitions within N-related localized states. From ODMR, growth of GaP/GaNP NWs is also found to facilitate formation of complex defects containing a P atom at its core that act as centers of competing non-radiative recombination.

Dobrovolsky, A.; Stehr, J. E.; Chen, S. L.; Chen, W. M.; Buyanova, I. A. [Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping (Sweden); Kuang, Y. J. [Department of Physics, University of California, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Materials Science and Engineering, La Jolla, California 92093 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093 (United States)

2012-10-15T23:59:59.000Z

326

Optical anisotropy of GaSb type-II nanorods on vicinal (111)B GaAs  

SciTech Connect

We form self-assembled GaSb type-II nanorods on a vicinal (111)B GaAs substrate by molecular beam epitaxy and study their optical anisotropy. The GaSb nanorods are elongated and aligned along the [-1 0 1] direction, where the average length, width, and height are about 84, 30, and 2.5 nm. In polarized photoluminescence (PL) measurements, the peak of the GaSb nanorods is observed at about 1.1 eV, where the PL intensity is largest for the [-1 0 1] polarization and smallest for the polarization perpendicular to it. The degree of polarization is more than 20% and depends on the recombination energy. By comparing with a theoretical model based on 4 x 4 Luttinger-Kohn Hamiltonian, we find that the experimental results are explained by considering the Sb/As inter-diffusion and the nanorod height distribution.

Kawazu, Takuya; Noda, Takeshi; Mano, Takaaki; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Akiyama, Yoshihiro [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan); Sakaki, Hiroyuki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan)

2011-12-05T23:59:59.000Z

327

EE9, MBE Grown InGaAsSbN/GaSb Single Quantum Wells for Mid ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

328

II3, 2?m Thick Device Quality GaN on Si(111) Using AlGaN Graded ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

329

JJ1, Internal Quantum Efficiency of Polar and Non-Polar GaInN/GaN ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

330

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods  

E-Print Network (OSTI)

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

2013-01-01T23:59:59.000Z

331

SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors  

Science Conference Proceedings (OSTI)

Hydrothermally grown SnO2 was integrated with AlGaN/GaN high electron mobility transistor (HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO2 was improved after annealing at 400 C. The grain growth kinetics of the SnO2 nanomaterials, together with the O2 gas sensing properties and sensing mechanism of the SnO2 gated HEMT sensors were investigated. Detection of 1% oxygen in nitrogen at 100 C was possible. A low operation temperature and low power consumption oxygen sensor can be achieved by combining the SnO2 films with the AlGaN/GaN HEMT structure

Hung, S.T. [Feng Chia University, Taichung, Taiwan; Chung, Chi-Jung [Feng Chia University, Taichung, Taiwan; Chen, Chin Ching [University of Florida, Gainesville; Lo, C. F. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

332

Highlights of the society for immunotherapy of cancer (SITC) 27th annual meeting  

E-Print Network (OSTI)

GA, USA. 14 Sidra Medical and Research, Centre, Doha, Qatar.Medical Center, Chicago, IL, USA. 12 Cancer Immunology Research

2013-01-01T23:59:59.000Z

333

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network (OSTI)

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

334

Elimination of charge-enhancement effects in GaAs FETs with a low-temperature grown GaAs buffer layer  

Science Conference Proceedings (OSTI)

The use of low temperature grown GaAs (LT GaAs) buffer layer in GaAs FETs is shown via computer simulation and experimental measurement to reduce ion-induced charge collection by two to three orders of magnitude. This reduction in collected charge is associated with the efficient reduction of charge-enhancement mechanisms in the FETs. Error rate calculations indicate that the soft error rate of LT GaAs integrated circuits will be reduced by several orders of magnitude when compared to conventional FET-based GaAs ICs.

McMorrow, D.; Weatherford, T.R.; Curtice, W.R.; Knudson, A.R.; Buchner, S.; Melinger, J.S.; Tran, L.H.; Campbell, A.B. [Naval Research Lab., Washington, DC (United States)

1995-12-01T23:59:59.000Z

335

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

336

Jacob P. Fugal, Scott Spuler Earth Observing Laboratory NCAR, Boulder, CO USA  

NLE Websites -- All DOE Office Websites (Extended Search)

airborne digital holographic airborne digital holographic instrument for measuring the spatial distribution and local size distributions of cloud particles: Holographic Detector for Clouds 2 (HOLODEC 2) Jacob P. Fugal, Scott Spuler Earth Observing Laboratory NCAR, Boulder, CO USA & Raymond A. Shaw Physics Department, michigan Tech Houghton, MI USA C-130 Hercules Q HIAPER Gulfstream GV HOLODEC (Holographic Detector for Clouds) is an airborne instrument that measures the size, shape, and relative 3D position of cloud particles using digital in- line holography. Science Questions for HOLODEC 2 * How do local cloud particle size distributions vary inside cloud regions (edge, top, core, base), by cloud age, cloud type? * How are cloud particles spatially distributed on sub-cm scales due to mixing, entrainment, and

337

ORNL DAAC NPP TEMPERATE FOREST: GREAT SMOKY MOUNTAINS, TENNESSEE, U.S.A.,  

NLE Websites -- All DOE Office Websites (Extended Search)

TEMPERATE FOREST: GREAT SMOKY MOUNTAINS, TENNESSEE, U.S.A., 1978-1992 TEMPERATE FOREST: GREAT SMOKY MOUNTAINS, TENNESSEE, U.S.A., 1978-1992 Get Data Summary: Productivity of old, unlogged stands of southern Appalachian cove forest was studied and compared to young stands. Tree growth increments and allometric relationships were the basis for estimation of net primary production (NPP). Measurements of tree diameter at 1.37 m above ground were made at the beginning the study. Radial increment cores were taken from a subset of trees. Above-ground net primary production (ANPP) was estimated using regional species-specific allometric relationships for tree mass. Estimation procedures were outlined by Busing et al. (1993). Old stands of mixed deciduous (and mixed deciduous-Tsuga) were selected for their gentle terrain, accessibility and history of study. From 1988 to

338

L'Oréal USA I've Got the Power Energy Conservation Challenge  

NLE Websites -- All DOE Office Websites (Extended Search)

L'Oréal USA I've Got the Power Energy Conservation Challenge L'Oréal USA I've Got the Power Energy Conservation Challenge presentation Secondary menu About us Press room Contact Us Portfolio Manager Login Facility owners and managers Existing buildings Commercial new construction Industrial energy management Small business Service providers Service and product providers Verify applications for ENERGY STAR certification Design commercial buildings Energy efficiency program administrators Commercial and industrial program sponsors Associations State and local governments Federal agencies Tools and resources Training In This Section Campaigns Commercial building design Communications resources Energy management guidance Financial resources Portfolio Manager Products and purchasing Recognition Research and reports Service and product provider (SPP) resources

339

ORNL DAAC NPP TROPICAL FOREST: MAUI, HAWAII, U.S.A., 1996-1997  

NLE Websites -- All DOE Office Websites (Extended Search)

TROPICAL FOREST: MAUI, HAWAII, U.S.A., 1996-1997 TROPICAL FOREST: MAUI, HAWAII, U.S.A., 1996-1997 Get Data Summary: The objective of this study was to quantify net primary productivity as a function of rainfall in mesic to wet montane rainforests in Maui, Hawaii. The Maui Moisture Gradient is a sequence of six sites located on the island of Maui that range from 2200-mm to 5050-mm mean annual rainfall, while temperature and all other state factors (parent material, substrate age, organisms, and topography) that control NPP remain relatively constant. This data set contains annual estimates of net primary productivity made in 1996 and 1997. The data provided are estimates of the accumulation of biomass by plants for a given year, or net primary productivity (NPP). Estimates are given for aboveground and belowground productivity, and the sum as net primary

340

L'Oreal USA I've Got the Power Energy Conservation Challenge  

NLE Websites -- All DOE Office Websites (Extended Search)

L'Oréal USA L'Oréal USA I've Got the Power Energy Conservation Challenge EPA ENERGY STAR Buildings Partner Meeting October 11, 2012 Program Objectives * Change employee electrical energy conservation behavior in the office * Increase employee knowledge an engagement to build a long-term culture of sustainability Applying Game Theory to Behavior Change Educate/Learn Reasons Why Motivate Competition Recognize Winners Reward Status Access Power Stuff Reinforce New/Desired Behavior Program Elements: Educate, Motivate, Recognize & Reward * Communicate L'Oréal goal to reduce environmental footprint * Use Energy Champs to educate colleagues on each floor about how they can conserve electricity Educate/Learn * Incent a floor by floor competition to reduce

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Open government map data initiatives in the USA or Canada? | OpenEI  

Open Energy Info (EERE)

Open government map data initiatives in the USA or Canada? Open government map data initiatives in the USA or Canada? Home > Groups > OpenEI Community Central We are developing a SaaS collaboration platform called iLocator targeting municipalities and service contractors. In Europe we are now making the transition to OpenStreetMap, which provides a common map source with no commercial constraints, which can be customized with different color attributes for private and public roads, administrative boundaries, addresses and cadastral boundaries. OpenStreetMap has grown big in Europe and Open Gov Data is on the rise with many national geodata agencies releasing free map data to the public domain. See e.g. EPSIplatform News. This essentially means that map data are starting to float between municipalities, national geodata agencies and

342

High Voltage GaN Schottky Rectifiers  

SciTech Connect

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25T23:59:59.000Z

343

CC2, Two-Dimensional Electron Gas in In X Al 1-X N/Aln/GaN ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

344

The pricing of wireless phone services in the USA: issues and development trends  

Science Conference Proceedings (OSTI)

The growth of wireless phone subscribers in recent years contributes to the myriad of service packages offered by the providers. With the increase of service capabilities, the fee usually increases. Often, the service terms are complicated, and the factors ... Keywords: CLEC, E911, FCC, ILEC, MTSO, USA, USF, United States, WTB, call plans, cell phones, consumers, customers, handoffs, itemised billing, local exchange carriers, mobile communications, mobile phones, packages, policy makers, pricing structures, roaming, service providers, wireless phone services

Young B. Choi; Travis C. Bache; Liza L. Hill

2007-01-01T23:59:59.000Z

345

Nano-criticality in small CoO particles To Kenneth Wilson, Cornell, USA  

E-Print Network (OSTI)

Nano-criticality in small CoO particles To Kenneth Wilson, Cornell, USA "for his theory a neutron scattering study of CoO bulk and nano-powders, we have measured the critical magnetic scattering), and theC -n magnetic coherence length xµ(-e) . We have found a bof 0.31 and 0.35 for bulk and nano

346

Phonon Knudsen flow in GaAs/AlAs superlattices  

DOE Green Energy (OSTI)

The measured in-plane thermal conductivity, {delta}{sub SL} of GaAs/AlAs superlattices with even moderate layer thicknesses are significantly smaller than the weighted average, {delta}{sub l} = 67 W/Km, of the bulk GaAs and AlAs conductivities. One expects a suppression of the thermal conductivity to that of an actual Al{sub 0.5}Ga{sub 0.5}As alloy when the thickness of the GaAs and AlAs layers approaches that of a single monolayer. However, the observed superlattice thermal conductivity remains suppressed even at layer thickness {approx_gt} 10 nm. The low thermal conductivities, and very high mobilities, make n-doped GaAs/AlAs superlattices attractive possibilities for thermoelectric devices. With Molecular-Beam-Epitaxial grown GaAs/AlAs superlattices one can expect the individual GaAs and AlAs layers to be extremely clean. Defect and/or alloy scattering is limited to be near the heterostructure interfaces. The authors estimate the room-temperature phonon mean-free-path to be 42 (22) nm for the longitudinal (transverse) mode and thus comparable to or smaller than the layer thicknesses. Thus they expect an important phonon scattering at the interfaces. They study this phonon scattering at the superlattice interfaces assuming a Knudsen flow characterized by diffusive scattering. The solid curve in the figure shows the Knudsen-flow theory estimated for the superlattice thermal conductivity which shows a significant reduction when the layer thickness is shorter than the estimated phonon mean free paths.

Hyldgaard, P.; Mahan, G.D. [Oak Ridge National Lab., TN (United States). Solid State Div.]|[Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy

1995-09-01T23:59:59.000Z

347

Strain relaxation in GaN/Al{sub x}Ga{sub 1-x}N superlattices grown by plasma-assisted molecular-beam epitaxy  

SciTech Connect

We have investigated the misfit relaxation process in GaN/Al{sub x}Ga{sub 1-x}N (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 10{sup 8} cm{sup -2} to 2 x 10{sup 9} cm{sup -2}. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 10{sup 10} cm{sup -2}. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

Kotsar, Y.; Bellet-Amalric, E.; Das, A.; Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 Rue des Martyrs, 38054 Grenoble cedex 9 (France); Doisneau, B. [SIMaP, Grenoble INP, Domaine Universitaire, BP 75, 38402 Saint Martin d'Heres (France); Sarigiannidou, E. [LMGP, Grenoble INP, 3 Parvis Louis Neel, BP 257, 38016 Grenoble cedex 1 (France)

2011-08-01T23:59:59.000Z

348

www.elsevier.com/locate/envpol Carbon storage and sequestration by urban trees in the USA  

E-Print Network (OSTI)

Capsule: Urban trees currently store 700 million tons of carbon, with an annual sequestration rate of 22.8 million tons. Based on field data from 10 USA cities and national urban tree cover data, it is estimated that urban trees in the coterminous USA currently store 700 million tonnes of carbon ($14,300 million value) with a gross carbon sequestration rate of 22.8 million tC/yr ($460 million/year). Carbon storage within cities ranges from 1.2 million tC in New York, NY, to 19,300 tC in Jersey City, NJ. Regions with the greatest proportion of urban land are the Northeast (8.5%) and the southeast (7.1%). Urban forests in the north central, northeast, south central and southeast regions of the USA store and sequester the most carbon, with average carbon storage per hectare greatest in southeast, north central, northeast and Pacific northwest regions, respectively. The national average urban forest carbon storage density is 25.1 tC/ha, compared with 53.5 tC/ha in forest stands. These data can be used to help assess the actual and potential role of urban forests in reducing atmospheric carbon dioxide, a dominant greenhouse gas. Published by Elsevier Science Ltd.

David J. Nowak; Daniel E. Crane

2001-01-01T23:59:59.000Z

349

E ON Climate Renewables North America formerly Airtricity USA | Open Energy  

Open Energy Info (EERE)

Climate Renewables North America formerly Airtricity USA Climate Renewables North America formerly Airtricity USA Jump to: navigation, search Name E.ON Climate & Renewables North America (formerly Airtricity USA) Place Chicago, Illinois Zip 60611 Sector Renewable Energy Product Chicago-based subsidiary of E.ON Climate & Renewables that owns and operates clean energy generation assets in North America. Coordinates 41.88415°, -87.632409° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.88415,"lon":-87.632409,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

350

Estimates of the Global Indirect Energy-Use Emission Impacts of USA Biofuel Policy  

Science Conference Proceedings (OSTI)

This paper evaluates the indirect energy-use emission implications of increases in the use of biofuels in the USA between 2001 and 2010 as mandates within a dynamic global computable general equilibrium model. The study incorporates explicit markets for biofuels, petroleum and other fossil fuels, and accounts for interactions among all sectors of an 18-region global economy. It considers bilateral trade, as well as the dynamics of capital allocation and investment. Simulation results show that the biofuel mandates in the USA generate an overall reduction in global energy use and emissions over the simulation period from 2001 to 2030. Consequently, the indirect energy-use emission change or emission leakage under the mandate is negative. That is, global emission reductions are larger than the direct emission savings from replacing petroleum with biofuels under the USA RFS2 over the last decade. Under our principal scenario this enhanced the direct emission reduction from biofuels by about 66%. The global change in lifecycle energy-use emissions for this scenario was estimated to be about 93 million tons of CO2e in 2010, 45 million tons of CO2e in 2020, and an increase of 5 million tons of CO2e in 2030, relative to the baseline scenario. Sensitivity results of six alternative scenarios provided additional insights into the pattern of the regional and global effects of biofuel mandates on energy-use emissions.

Oladosu, Gbadebo A [ORNL

2012-01-01T23:59:59.000Z

351

Testing of ethylene propylene seals for the GA-4/GA-9 casks  

SciTech Connect

The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

Boonstra, R.H.

1993-08-01T23:59:59.000Z

352

Nanostructuring of silicon substrates for the site-controlled growth of GaAs/In0.15Ga0.85As/GaAs nanostructures  

Science Conference Proceedings (OSTI)

We report the optimization of electron beam lithography and inductively coupled plasma (ICP) dry etching processes to fabricate pre-patterned Si (100) substrates with sub-100nm holes with controlled size and shape. An efficient in situ cleaning sequence ... Keywords: Electron beam lithography, ICP dry etching, InGaAs quantum dots, MBE growth, Nanostructuring of silicon

Muhammad Usman; Tariq Alzoubi; Mohamed Benyoucef; Johann Peter Reithmaier

2012-09-01T23:59:59.000Z

353

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

354

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network (OSTI)

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

355

High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report the highest mobility values above 2000 cm{sup 2}/Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Inagaki, Makoto [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Aichi (Japan); Yamaguchi, Masafumi [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Aichi (Japan)

2012-11-26T23:59:59.000Z

356

Black-body radiation shift of the Ga$^{+}$ clock transition  

E-Print Network (OSTI)

The blackbody radiation shift of the Ga$^+$ $4s^2 \\ ^1S^e_0 \\to 4s4p \\ ^3P^o_0$ clock transition is computed to be $-$$0.0140 \\pm 0.0048$ Hz at 300 K. The small shift is consistent with the blackbody shifts of the clock transitions of other group III ions which are of a similar size. The polarizabilities of the Ga$^+$ $4s^2 \\ ^1S^e_0$, $4s4p \\ ^3P^o_0$, and $4s4p \\ ^1P^o_1$ states were computed using the configuration interaction method with an underlying semi-empirical core potential. A byproduct of the analysis involved large scale calculations of the low lying spectrum and oscillator strengths of the Ga$^{2+}$ ion.

Cheng, Yongjun

2013-01-01T23:59:59.000Z

357

Aug. 8-9, 2006 HAPL meeting, GA Open Discussion on Advanced Armor  

E-Print Network (OSTI)

Aug. 8-9, 2006 HAPL meeting, GA 1 Open Discussion on Advanced Armor Concepts Moderated by A. René in case the W armor does not work. #12;Aug. 8-9, 2006 HAPL meeting, GA 3 Roman Aquaduct at Pont du Gard, Provence #12;Aug. 8-9, 2006 HAPL meeting, GA 4 Possible Advanced Armor Options Include: · Engineered

Raffray, A. René

358

Current injection efficiency of InGaAsN quantum-well lasers Nelson Tansua  

E-Print Network (OSTI)

Current injection efficiency of InGaAsN quantum-well lasers Nelson Tansua Department of Electrical-threshold current injection efficiency of quantum well QW lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200 nm emitting InGaAs and 1300 nm emitting InGaAsN QW

Gilchrist, James F.

359

ANN-based GA for generating the sizing curve of stand-alone photovoltaic systems  

Science Conference Proceedings (OSTI)

Recent advances in artificial intelligence techniques have allowed the application of such technologies in real engineering problems. In this paper, an artificial neural network-based genetic algorithm (ANN-GA) model was developed for generating the ... Keywords: ANN, ANN-GA, GA, Prediction, Sizing curve, Stand-alone PV system

Adel Mellit

2010-05-01T23:59:59.000Z

360

Luminescence Enhancement in InGaN and ZnO by Water Vapor ...  

Science Conference Proceedings (OSTI)

Dependence of Ag/In Ratio of AgInS2 Crystals Grown by Hot-Press Method ... Analysis of Temperature Characteristics of InGaP/InGaAs/Ge Triple-Junction Solar Cell ... Luminescence Enhancement in InGaN and ZnO by Water Vapor Remote...

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a  

E-Print Network (OSTI)

is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

Okamoto, Koichi

362

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network (OSTI)

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

363

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs  

E-Print Network (OSTI)

The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate ...

Piner, Edwin L.

364

Vertically aligned GaN nanotubes - Fabrication and current image analysis  

Science Conference Proceedings (OSTI)

In this work, we present a one step formation method of nanotubes on GaN film, and then map out local current of nanotubes. GaN nanotubes were formed by inductively coupled plasma (ICP) etching and found that tops of these nanotubes were hexagonal with ... Keywords: C-AFM, FESEM, GaN, ICP, Nanotubes

Shang-Chao Hung; Yan-Kuin Su; Shoou-Jinn Chang; Y. H. Chen

2006-11-01T23:59:59.000Z

365

Epitaxial EuO thin films on GaAs  

SciTech Connect

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 deg., a significant remanent magnetization, and a Curie temperature of 69 K.

Swartz, A. G.; Ciraldo, J.; Wong, J. J. I.; Li Yan; Han Wei; Lin Tao; Shi, J.; Kawakami, R. K. [Department of Physics and Astronomy, University of California, Riverside, California 92521 (United States); Mack, S.; Awschalom, D. D. [Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106 (United States)

2010-09-13T23:59:59.000Z

366

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

367

AlP/GaP distributed Bragg reflectors  

SciTech Connect

Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

2013-07-15T23:59:59.000Z

368

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

369

Electron Hall Mobility in GaAsBi  

Science Conference Proceedings (OSTI)

We present measurements of the electron Hall mobility in n-type GaAs{sub 1-x}Bi{sub x} epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration ({ge} 1.6%) some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism.

Kini, R. N.; Bhusal, L.; Ptak, A. J.; France, R.; Mascarenhas, A.

2009-01-01T23:59:59.000Z

370

PLANT BIOLOGY DEPARTMENT HANDBOOK  

E-Print Network (OSTI)

PLANT BIOLOGY DEPARTMENT HANDBOOK 2012-2013 University of Georgia Athens, GA 30602 Updated: 9/5/12 #12;Plant Biology Handbook Table of Contents General Information and Operating Procedures 1

Arnold, Jonathan

371

U.S. Department of Energy Categorical Exclusion Determination...  

NLE Websites -- All DOE Office Websites (Extended Search)

dedicated laboratory in Richland, WA; Power Partners Inc.'s dedicated facility in Athens, GA; and Arkema, Inc.3 R&D facility in King of Prussia, PA. The work performed will be...

372

Analyzing the growth of In{sub x}Ga{sub 1-x}N/GaN superlattices in self-induced GaN nanowires by x-ray diffraction  

Science Conference Proceedings (OSTI)

Self-induced GaN nanowires are grown by plasma-assisted molecular beam epitaxy, with In{sub x}Ga{sub 1-x}N quantum wells inserted to form an axial superlattice. From the {omega}-2{theta} scans of a laboratory x-ray diffraction experiment, we obtain the superlattice period, the thickness of the quantum wells, and the In content in this layer. The axial growth rate of the In{sub x}Ga{sub 1-x}N quantum wells is significantly enhanced, which we attribute to increased Ga diffusion along the nanowire sidewalls in the presence of In.

Woelz, M.; Kaganer, V. M.; Brandt, O.; Geelhaar, L.; Riechert, H.

2011-06-27T23:59:59.000Z

373

Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched to GaAs: Preprint  

Science Conference Proceedings (OSTI)

This conference paper describes the deep-level transient spectroscopy (DLTS) measurements have been performed on the quaternary semiconductor InGaAsN. A series of as-grown, metal-organic chemical vapor deposited samples having varying composition were grown and measured. A GaAs sample was used as a baseline for comparison. After adding only In to GaAs, we did not detect significant additional defects; however, adding N and both N and In led to larger hole-trap peaks and additional electron-trap peaks in the DLTS data. The samples containing about 2% N, with and without about 6% In, had electron traps with activation energies of about 0.2 and 0.3 eV. A sample with 0.4% N had an electron trap with an activation energy of 0.37 eV.

Johnston, S. W.; Ahrenkiel, R. K.; Friedman, D. J.; Kurtz, S. R.

2002-05-01T23:59:59.000Z

374

Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets  

Science Conference Proceedings (OSTI)

Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

Chu, Kuei-Yi [National Cheng-Kung University, Institute of Microelectronics, Department of Electrical Engineering (China); Chiang, Meng-Hsueh, E-mail: mhchiang@niu.edu.tw; Cheng, Shiou-Ying, E-mail: sycheng@niu.edu.tw [National II an University, Department of Electronic Engineering (China); Liu, Wen-Chau [National Cheng-Kung University, Institute of Microelectronics, Department of Electrical Engineering (China)

2012-02-15T23:59:59.000Z

375

Organic Particles Kevin Wilson Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA  

NLE Websites -- All DOE Office Websites (Extended Search)

for Studying the Chemical Transformations of for Studying the Chemical Transformations of Organic Particles Kevin Wilson Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA Molecular weight growth and decomposition chemistries play important roles in the transformation of particles from soot formation to atmospheric aerosol oxidation. Understanding these complex reaction pathways requires novel methods of analyzing particle phase hydrocarbons. We are developing a suite of synchrotron-based tools to provide better insights into the molecular composition, isomer distribution, and elemental composition of complex hydrocarbon mixtures, aimed at developing simple yet realistic descriptions of molecular weight growth and decomposition that occur during a heterogeneous reaction.

376

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. [Research Triangle Inst., Research Triangle Park, NC (United States)

1993-01-01T23:59:59.000Z

377

Ultra High p-doping Material Research for GaN Based Light Emitters  

Science Conference Proceedings (OSTI)

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

Vladimir Dmitriev

2007-06-30T23:59:59.000Z

378

jbc.M110.215962.full.pdf  

NLE Websites -- All DOE Office Websites (Extended Search)

arabinan-specific arabinan-specific D D-1,2- arabinofuranosidase identified from screening the activities of bacterial GH43 glycoside hydrolases Alan Cartmell 1,2 *, Lauren McKee 1,2 *, Maria J. Peña 2 , Johan Larsbrink 3 , Harry Brumer 3 , Satoshi Kaneko 4 , Hitomi Ichinose 4 , Richard J. Lewis 1 , Anders Viksø-Nielsen 5 , Harry J. Gilbert 1,2¶ and Jon Marles-Wright 1 1 Institute for Cell and Molecular Biosciences, Newcastle University, The Medical School, Newcastle upon Tyne NE2 4HH, U.K; 2 The Complex Carbohydrate Research Center, The University of Georgia, 315 Riverbend Road, Athens, GA 30602, USA; 3 School of Biotechnology, Royal Institute of Technology, AlbaNova University Centre, 10691 Stockholm, Sweden; 4 Food Biotechnology Division, National Food Research Institute, 2-1-12 Kannondai, Tsukuba, Ibaraki 305-8642, Japan,

379

gks479 1..7  

NLE Websites -- All DOE Office Websites (Extended Search)

dbCAN: dbCAN: a web resource for automated carbohydrate-active enzyme annotation Yanbin Yin 1 , Xizeng Mao 1 , Jincai Yang 1 , Xin Chen 2 , Fenglou Mao 1 and Ying Xu 1,2, * 1 Computational System Biology Laboratory, Department of Biochemistry and Molecular Biology, Institute of Bioinformatics, BioEnergy Science Center, University of Georgia, Athens, GA, USA and 2 College of Computer Science and Technology, Jilin University, Changchun, China Received January 31, 2012; Revised April 29, 2012; Accepted May 8, 2012 ABSTRACT Carbohydrate-active enzymes (CAZymes) are very important to the biotech industry, particularly the emerging biofuel industry because CAZymes are responsible for the synthesis, degradation and modi- fication of all the carbohydrates on Earth. We have developed a web resource, dbCAN (http://csbl.bmb .uga.edu/dbCAN/annotate.php), to provide a cap- ability for automated

380

Structural analysis of arabinoxylans isolated from ball-milled switchgrass biomass  

NLE Websites -- All DOE Office Websites (Extended Search)

analysis analysis of arabinoxylans isolated from ball-milled switchgrass biomass Koushik Mazumder, William S. York * Complex Carbohydrate Research Center, University of Georgia, 315 Riverbend Road, Athens, GA 30602, USA a r t i c l e i n f o Article history: Received 16 June 2010 Received in revised form 20 July 2010 Accepted 22 July 2010 Available online 30 July 2010 Keywords: Switchgrass Enzymatic digestion Arabinoxylan oligosaccharides Per-O-methylation Multiple-step mass spectrometry Structural analysis a b s t r a c t Ball-milled alcohol-insoluble residue (AIR) was prepared from switchgrass (Panicum virgatum var Alamo) and sequentially extracted with 50 mM ammonium oxalate buffer, 50 mM sodium carbonate, 1 M KOH containing 1% NaBH 4 , and 4 M KOH containing 1% NaBH 4 . Arabinoxylan was the most abundant component of the 1 M KOH-extracted fraction, which was treated with endoxylanase

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Using GA-ANN algorithm to predicate coal bump energy  

Science Conference Proceedings (OSTI)

A GA-ANN network was constructed for preidcating coal bump energy, based on the 300 training samples form simulated results with PFC2D software for different coal particle stiffness. It was tested that the average relative error of fitted-output value ... Keywords: artificial neural network, coal bump, energy, genetic algorithm, predication

Yunliang Tan; Tongbin Zhao; Zhigang Zhao

2009-06-01T23:59:59.000Z

382

Properties of H, O and C in GaN  

DOE Green Energy (OSTI)

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

1996-04-01T23:59:59.000Z

383

Optimization on Seawater Desulfurization Efficiency Based on LSSVM-GA  

Science Conference Proceedings (OSTI)

Seawater flue gas Desulfurization (SFGD) was adopted in many coal-fired power plants of littoral for its low cost and high desulfurization efficiency. Operating Parameters would seriously affect SFGD efficiency, the desulfurization efficiency can be ... Keywords: SFGD, desulfurization efficiency, LSSVM, GA, optimization

Liu Ding-ping; Li Xiao-wei

2010-10-01T23:59:59.000Z

384

Development of ZnO:Ga as an Ultrafast Scintillator  

DOE Green Energy (OSTI)

We report on several methods for synthesizing the ultra-fast scintillator ZnO(Ga), and measurements of the resulting products. This material has characteristics that make it an excellent alpha detector for tagging the time and direction of individual neutrons produced by t-d and d-d neutron generators (associated particle imaging). The intensity and decay time are strongly dependent on the method used for dopant incorporation. We compare samples made by diffusion of Ga metal to samples made by solid state reaction between ZnO and Ga2O3 followed by reduction in hydrogen. The latter is much more successful and has a pure, strong near-band-edge fluorescence and an ultra-fast decay time of the x-ray-excited luminescence. The luminescence increases dramatically as the temperature is reduced to 10K. We also present results of an alternate low-temperature synthesis that produces luminescent particles with a more uniform size distribution. We examine possible mechanisms for the bright near-band-edge scintillation and favor the explanation that it is due to the recombination of Ga3+ donor electrons with ionization holes trapped on H+ ion acceptors.

Bourret-Courchesne, E.D.; Derenzo, S.E.; Weber, M.J.

2008-12-10T23:59:59.000Z

385

Low cost high power GaSB photovoltaic cells  

Science Conference Proceedings (OSTI)

High power density and high capacity factor are important attributes of a thermophotovoltaics (TPV) system and GaSb cells are enabling for TPV systems. A TPV cogeneration unit at an off grid site will compliment solar arrays producing heat and electricity on cloudy days with the solar arrays generating electricity on sunny days. Herein

Lewis M. Fraas; Han X. Huang; Shi-Zhong Ye; She Hui; James Avery; Russell Ballantyne

1997-01-01T23:59:59.000Z

386

Low cost high power GaSb thermophotovoltaic cells  

Science Conference Proceedings (OSTI)

High power density and high capacity factor are important attributes of a TPV system and GaSb cells are enabling for TPV systems. A TPV cogeneration unit at an off grid site will compliment solar arrays producing heat and electricity on cloudy days with the solar arrays generating electricity on sunny days. Herein

Lewis M. Fraas; Han X. Huang; Shi-Zhong Ye; James Avery; Russell Ballantyne

1997-01-01T23:59:59.000Z

387

AlGaAsSb buffer/barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability  

Science Conference Proceedings (OSTI)

Keywords: AlGaAsSb, Hall elements, InAs, Sb, buffer/barriers, deep quantum well, field effect transistors, reliability

S. Miya; S. Muramatsu; N. Kuze; K. Nagase; T. Iwabuchi; A. Ichii; M. Ozaki; I. Shibasaki

1996-03-01T23:59:59.000Z

388

Characterization and device performance of (AgCu)(InGa)Se2 absorber layers  

DOE Green Energy (OSTI)

The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only control samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and ? = 13.0%.

Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

2009-06-08T23:59:59.000Z

389

Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se2 absorber layers  

DOE Green Energy (OSTI)

(Ag,Cu)(In,Ga)Se2 thin films have been deposited by elemental co-evaporation over a wide range of compositions and their optical properties characterized by transmission and reflection measurements and by relative shift analysis of quantum efficiency device measurements. The optical bandgaps were determined by performing linear fits of (?h?)2 vs. h?, and the quantum efficiency bandgaps were determined by relative shift analysis of device curves with fixed Ga/(In+Ga) composition, but varying Ag/(Cu+Ag) composition. The determined experimental optical bandgap ranges of the Ga/(In+Ga) = 0.31, 0.52, and 0.82 groups, with Ag/(Cu+Ag) ranging from 0 to 1, were 1.19-1.45 eV, 1.32-1.56 eV, and 1.52-1.76 eV, respectively. The optical bowing parameter of the different Ga/(In+Ga) groups was also determined.

Boyle, Jonathan; Hanket, Gregory; Shafarman, William

2009-06-09T23:59:59.000Z

390

USA National Phenology Network: Plant and Animal Life-Cycle Data Related to Climate Change  

DOE Data Explorer (OSTI)

Phenology refers to recurring plant and animal life cycle stages, such as leafing and flowering, maturation of agricultural plants, emergence of insects, and migration of birds. It is also the study of these recurring plant and animal life cycle stages, especially their timing and relationships with weather and climate. Phenology affects nearly all aspects of the environment, including the abundance and diversity of organisms, their interactions with one another, their functions in food webs, and their seasonable behavior, and global-scale cycles of water, carbon, and other chemical elements. Phenology records can help us understand plant and animal responses to climate change; it is a key indicator. The USA-NPN brings together citizen scientists, government agencies, non-profit groups, educators, and students of all ages to monitor the impacts of climate change on plants and animals in the United States. The network harnesses the power of people and the Internet to collect and share information, providing researchers with far more data than they could collect alone.[Extracts copied from the USA-NPN home page and from http://www.usanpn.org/about].

391

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

392

Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices  

Science Conference Proceedings (OSTI)

Reverse-bias stress testing has been applied to a large set of more than 50 AlGaN/GaN high electron mobility transistors, which were fabricated using the same process but with different values of the AlN mole fraction and the AlGaN barrier-layer thickness, as well as different substrates (SiC and sapphire). Two sets of devices having different defect types and densities, related to the different growth conditions and the choice of nucleation layer, were also compared. When subjected to gate drain (or gate-to-drain and source short-circuited) reverse-bias testing, all devices presented the same time-dependent failure mode, consisting of a significant increase in the gate leakage current. This failure mechanism occurred abruptly during step-stress experiments when a certain negative gate voltage, or critical voltage, was exceeded or, during constant voltage tests, at a certain time, defined as time to breakdown. Electroluminescence (EL) microscopy was systematically used to identify localized damaged areas that induced an increase of gate reverse current. This current increase was correlated with the increase of EL intensity, and significant EL emission during tests occurred only when the critical voltage was exceeded. Focused-ion-beam milling produced cross-sectional samples suitable for electron microscopy observation at the sites of failure points previously identified by EL microscopy. In highdefectivity devices, V-defects were identified that were associated with initially high gate leakage current and corresponding to EL spots already present in untreated devices. Conversely, identification of defects induced by reverse-bias testing proved to be extremely difficult, and only nanometer-size cracks or defect chains, extending vertically from the gate edges through the AlGaN/GaN heterojunction, were found. No signs of metal/semiconductor interdiffusion or extended defective areas were visible.

Cullen, David A [ORNL; Smith, David J [Arizona State University; Passaseo, Adriana [Consiglio Nazionale delle Ricerche; Tasco, Vittorianna [Consiglio Nazionale delle Ricerche; Stocco, Antonio [Universita di Padova; Meneghini, Matteo [Universita di Padova; Meneghesso, Gaudenzio [Universita di Padova; Zanoni, Enrico [Universita di Padova

2013-01-01T23:59:59.000Z

393

GaSb substrates with extended IR wavelength for advanced space based applications  

SciTech Connect

GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

2009-05-01T23:59:59.000Z

394

Two-color picosecond experiments on anti-Stokes photoluminescence in GaAs/AlGaAs asymmetric double quantum wells  

E-Print Network (OSTI)

quantum wells S. C. Hohng and D. S. Kima) Department of Physics and Condensed Matter Research Institute in GaAs/AlGaAs asymmetric double quantum wells. Direct evidence for forbidden absorption is shown heterojunctions and asymmetric double quan- tum wells was found and its origin is still being hotly de- bated

Hohng, Sung Chul

395

Light output enhancement of InGaN/GaN light-emitting diodes with contrasting indium tin-oxide nanopatterned structures  

Science Conference Proceedings (OSTI)

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square ...

Sang Hyun Jung, Keun Man Song, Young Su Choi, Hyeong-Ho Park, Hyun-Beom Shin, Ho Kwan Kang, Jaejin Lee

2013-01-01T23:59:59.000Z

396

Optically pumped InxGa???xN/InyGa???yN multiple quantum well vertical cavity surface emitting laser operating at room temperature.  

E-Print Network (OSTI)

Room temperature vertical cavity lasing at the wavelength of 433nm has been successfully realized in InxGa???xN/InyGa???yN multiple quantum well without Bragg mirrors under photo-excitation. At high excitation intensity, ...

Chen, Zhen

397

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth  

Science Conference Proceedings (OSTI)

Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f{sub t} and f{sub max} in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 OMEGA mum to a GaN 2DEG.

Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K. [Department of ECE, University of California, Santa Barbara, California 93106 (United States) and Department of Materials, University of California, Santa Barbara, California 93106 (United States)

2010-04-05T23:59:59.000Z

398

9th Biannual Joint Technical Day of CIE/USA and CNC/CIE, Davis, CA, 7 Nov. 2013 Improving Traceability of  

E-Print Network (OSTI)

9th Biannual Joint Technical Day of CIE/USA and CNC/CIE, Davis, CA, 7 Nov. 2013 Improving Traceability of Fluorescence Calibrations to Practical Colorimetric Applications 9th Biannual Joint US and Standards National Research Council of Canada #12;9th Biannual Joint Technical Day of CIE/USA and CNC

California at Davis, University of

399

The East-West Center in Washington, Hokkaido University's Global COE Program, and the Sasakawa Peace Foundation USA invite you to a public conference  

E-Print Network (OSTI)

Peace Foundation USA invite you to a public conference: Regional Security and Okinawa in the U the dilemma of how to best ensure regional security and contention over U.S. bases in Okinawa. In a public, and the Sasakawa Peace Foundation USA, Japanese and American experts on regional security and Okinawa base issues

Tachizawa, Kazuya

400

GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as the gate dielectric. The MOS gate reverse breakdown voltage was > 35V which was significantly improved from 17V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V{sub ds} = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, f{sub {tau}}, and maximum frequency of oscillation, f{sub max} of 3.1 and 10.3 GHz, respectively, were measured at V{sub ds} = 25 V and V{sub gs} = {minus}20 V.

Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Schurman, M.J.

1999-03-02T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Dynamic Model of Hydrogen in GaN  

NLE Websites -- All DOE Office Websites (Extended Search)

Dynamic Model of Hydrogen in GaN by S. M. Myers and A. F. Wright Motivation-Hydrogen is incorporated into p-type GaN during MOCVD growth, producing highly stable passivation of the Mg acceptors. Complete acceptor activation by thermal H release requires temperatures that threaten material integrity, prompting compromises in device processing. At lower temperatures, forward bias of p-n junctions or electron-beam irradiation produces a metastable, reversible activation without H release. To understand and control such effects, we are developing a mathematical model of H behavior wherein state energies from density-functional theory are employed in diffusion-reaction equations. Previously, we used the greatly simplifying assumptions of local equilibrium among states

402

A GaAs transceiver chip for optical data transmission  

SciTech Connect

The present article describes a transceiver VLSI chip for optical data transmission, at 1 Gbit/s (1.4 Gbit/s in selected production), made in GaAs technology. The transceiver makes the parallel-to-serial and serial-to-parallel conversion as well as the encoding and decoding of 32 bit data words. The circuit operates in a completely asynchronous mode, allowing the possibility of switching on-off the transmission in few nsec and of using the transceiver not only in point-to-point topologies, but also in flooding topologies (i.e. star connections). The radiation hardness and the relatively low power consumption, respect to TTL, of the GaAs, extend the use of the chip to a large number of applications in present and future high energy physics experimental apparatus.

Mirabelli, G.; Petrolo, E.; Valente, E. (Ist. Nazionale di Fisica Nucleare, Roma (Italy)); Cardarelli, R.; Santonico, R. (Sezione di Roma 2 and Univ. di Roma (Italy). Ist. Nazionale di Fisica Nucleare); Ferrer, M.L. (Lab. Nazionali di Frascati (Italy). Ist. Nazionale di Fisica Nucleare)

1993-08-01T23:59:59.000Z

403

Method of plasma etching Ga-based compound semiconductors  

SciTech Connect

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Qiu, Weibin; Goddard, Lynford L.

2012-12-25T23:59:59.000Z

404

AlGaAs diode pumped tunable chromium lasers  

DOE Patents (OSTI)

An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF.sub.6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF.sub.6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.

Krupke, William F. (Pleasanton, CA); Payne, Stephen A. (Castro Valley, CA)

1992-01-01T23:59:59.000Z

405

CsBr/GaN Heterojunction Photoelectron Source  

Science Conference Proceedings (OSTI)

Experimental results on a new CsBr/GaN heterojunction photocathode structure are presented. The results indicate a fourfold improvement in photoyield relative to CsBr/Cr photocathodes. A model is presented based on intraband states in CsBr and electron injection from the GaN (with 1% addition of indium) substrate to explain the observed photoyield enhancement. The photocathode lifetime at high current density (>40 A/cm{sup 2}) is limited by laser heating of the small illuminated area. Calculations are presented for sapphire and diamond substrates, indicating a factor of 20 reduction in temperature for the latter. The results are encouraging for the realization of a high photoyield photocathode operating at high current density with long lifetime.

Maldonado, J.R.; /Stanford U., Elect. Eng. Dept.; Liu, Z.; Sun, Y.; /SLAC, SSRL; Schuetter, S.; /Wisconsin U., Madison; Pianetta, P.; /SLAC, SSRL; Pease, R.F.W.; /Stanford U., Elect. Eng. Dept.

2009-04-30T23:59:59.000Z

406

Method of plasma etching GA-based compound semiconductors  

DOE Patents (OSTI)

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Qiu, Weibin; Goddard, Lynford L.

2013-01-01T23:59:59.000Z

407

Atmospheric Methane at Cape Meares, Oregon, U.S.A.: A High-Resolution Data  

NLE Websites -- All DOE Office Websites (Extended Search)

Atmospheric Trace Gases » Methane » Atmospheric Trace Gases » Methane » Atmospheric Methane, Cape Meares Atmospheric Methane at Cape Meares, Oregon, U.S.A.: A High-Resolution Data Base for the Period 1979-1992 DOI: 10.3334/CDIAC/atg.db1007 data Data (DB1007) Investigators M. A. K. Khalil and R. A. Rasmussen Description This data base presents continuous automated atmospheric methane (CH4) measurements taken at the atmospheric monitoring facility in Cape Meares, Oregon, by the Oregon Graduate Institute of Science and Technology. The Cape Meares data represent some 119,000 individual atmospheric methane measurements carried out during 1979-1992. Analysis of ambient air (collected 12 to 72 times daily) was carried out by means of an automated sampling and measurement system, using the method of gas chromatography and

408

STATEMENT OF CONSIDERATIONS REQUEST BY GE ENERGY (USA) LLC, FOR AN ADVANCE WAIVER OF  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

859; W(A)-2012-018 859; W(A)-2012-018 ; CH-1661 GE Energy (USA) LLC (GE), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled , "Feasibility Studies to Improve Plant Availability and Reduce Total Installed Cost in IGCC Plants". Under this agreement, GE will evaluate several factors that make the cost of implementing integrated gasification combined cycle (IGCC) power production challenging . Specifically, GE will evaluate the effects on total installed cost and availability through deployment of a multi-faceted approach in three areas: Technology Evaluation ; Constructability; and , Design methodology. The end result is to reduce the time to technologica l maturity and enable plants to reach higher

409

J.G. Tobin and S.-W. Yu Lawrence Livermore National Laboratory, Livermore, CA, USA  

National Nuclear Security Administration (NNSA)

Differentiation of 5f and 6d Components Differentiation of 5f and 6d Components in the Unoccupied Electronic Structure of UO 2 J.G. Tobin and S.-W. Yu Lawrence Livermore National Laboratory, Livermore, CA, USA Summary: One of the crucial questions of all actinide electronic structure determinations is the issue of 5f versus 6d character and the distribution of these components across the density of states. Here, two break-though experiments will be discussed, which have allowed the direct determination of the U5f and U6d contributions to the unoccupied density of states (UDOS) in Uranium Dioxide (UO 2 ). [1] First, a combined soft X-ray Absorption and Bremstrahlung Isochromat Spectroscopy (XAS and BIS, respectively) study of UO 2 will be discussed. [2] Second, a novel Resonant Inverse Photoelectron and X-ray Emission Spectroscopy (RIPES and

410

Issued by Sandia National Laboratories, Albuquerque, New Mexico, USA for the  

National Nuclear Security Administration (NNSA)

9-4908 P 9-4908 P Issued by Sandia National Laboratories, Albuquerque, New Mexico, USA for the US National Nuclear Security Administration (NNSA) Office of Research & Development for National Security Science & Technology, NA-121. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. ON THE COVER: Peridynamics simulation of uniaxial pull test of fiber-reinforced, laminate composite plates with initial central notches and having varying fiber orientations in the lamina (the "lay-ups"). The resulting damage and fracture emerge spontaneously in an unguided manner, and the cracking modes are consistent with those seen in laboratory

411

STATEMENT OF CONSIDERATIONS REQUEST BY GE ENERGY (USA) LLC, FOR AN ADVANCE WAIVER OF  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

902; W(A)-2012-019; CH-1662 902; W(A)-2012-019; CH-1662 GE Energy (USA) LLC (GE), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled, "Seeping Studies to Evaluate the Benefits of an Advanced Dry Feed System on the Use of Low-Rank Coal". Under this agreement, GE will demonstrate the advantage of using GE's new, advanced dry feed system (Posimetric Feed System-PFS) for converting low rank coal to electrical power in an IGCC plant configured for 90% Carbon Capture Utilization and Storage (CCUS). The PFS is centered on GE's proprietary Posimetric Feeder, a mechanical device that behaves like a particulate solids pump and is capable of pressurizing dry, ground coal to over 100 psi

412

Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.  

SciTech Connect

GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.

Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

2005-12-01T23:59:59.000Z

413

X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure  

SciTech Connect

High-resolution X-ray diffraction analysis and scanning confocal Raman spectroscopy are used to study the spatial distribution of strains in the In{sub x}Ga{sub 1-x}N/GaN layers and structural quality of these layers in a multilayered light-emitting diode structure produced by metal-organic chemical vapor deposition onto (0001)-oriented sapphire substrates. It is shown that elastic strains almost completely relax at the heterointerface between the thick GaN buffer layer and In{sub x}Ga{sub 1-x}N/GaN buffer superlattice. It is established that the GaN layers in the superlattice are in a stretched state, whereas the alloy layers are in a compressed state. In magnitude, the stretching strains in the GaN layers are lower than the compressive strains in the InGaN layers. It is shown that, as compared to the buffer layers, the layers of the superlattice contain a smaller number of dislocations and the distribution of dislocations is more randomly disordered. In micro-Raman studies on scanning through the thickness of the multilayered structure, direct evidence is obtained for the asymmetric gradient distributions of strains and crystal imperfections of the epitaxial nitride layers along the direction of growth. It is shown that the emission intensity of the In{sub x}Ga{sub 1-x}N quantum well is considerably (more than 30 times) higher than the emission intensity of the GaN barrier layers, suggesting the high efficiency of trapping of charge carriers by the quantum well.

Strelchuk, V. V., E-mail: Strelch@isp.kiev.ua; Kladko, V. P.; Avramenko, E. A.; Kolomys, O. F.; Safryuk, N. V.; Konakova, R. V. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine); Yavich, B. S., E-mail: byavich@soptel.ru [ZAO Svetlana-Optoelectronics (Russian Federation); Valakh, M. Ya.; Machulin, V. F.; Belyaev, A. E. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2010-09-15T23:59:59.000Z

414

UV-Photoassisted Etching of GaN in KOH  

SciTech Connect

The etch rate of GaN under W-assisted photoelectrochemical conditions in KOH solutions is found to be a strong function of illumination intensity, solution molarity, sample bias and material doping level. At low e-h pair generation rates, grain boundaries are selectively etched, while at higher illumination intensities etch rates for unintentionally doped (n - 3x 10^12Gcm-3) GaN are 2 1000 .min-l. The etching is diffusion limited under our conditions with an activation energy of - 0.8kCal.mol-1. The etched surfaces are rough, but retain their stoichiometry. PEC etching is found to selectively reveal grain boundaries in GaN under low light illumination conditions. At high lamp powers the rates increase with sample temperature and the application of bias to the PEC cell, while they go through a maximum with KOH solution molarity. The etching is diffusion-limited, producing rough surface morphologies that are suitable in a limited number of device fabrication steps. The surfaces however appear to remain relatively close to their stoichiometric composition.

Abernathy, C.R.; Auh, K.H.; Cho, H.; Donovan, S.M.; Han, J.; Lambers, E.S.; Pearton, S.J.; Ren F.; Shul, R.J.

1998-11-12T23:59:59.000Z

415

Comparative study of GaN growth process by MOVPE  

SciTech Connect

A comparative study of two different MOVPE reactors used for GaN growth is presented. Computational fluid dynamics (CFD) was used to determine common gas phase and fluid flow behaviors within these reactors. This paper focuses on the common thermal fluid features of these two MOVPE reactors with different geometries and operating pressures that can grow device-quality GaN-based materials. The study clearly shows that several growth conditions must be achieved in order to grow high quality GaN materials. The high-temperature gas flow zone must be limited to a very thin flow sheet above the susceptor, while the bulk gas phase temperature must be very low to prevent extensive pre-deposition reactions. These conditions lead to higher growth rates and improved material quality. A certain range of gas flow velocity inside the high-temperature gas flow zone is also required in order to minimize the residence time and improve the growth uniformity. These conditions can be achieved by the use of either a novel reactor structure such as a two-flow approach or by specific flow conditions. The quantitative ranges of flow velocities, gas phase temperature, and residence time required in these reactors to achieve high quality material and uniform growth are given.

Sun, J.; Redwing, J.M.; Kuech, T.F.

1999-07-01T23:59:59.000Z

416

Low-temperature magnetization of (Ga,Mn) As semiconductors  

E-Print Network (OSTI)

We report on a comprehensive study of the ferromagnetic moment per Mn atom in (Ga,Mn)As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments antiferromagnetically coupled to valence band hole spins. The validity of the effective model over the range of doping studied is assessed by comparing with microscopic tight-binding/coherent-potential approximation calculations. Using the virtual crystal k center dot p model for hole states, we evaluate the zero-temperature mean-field contributions to the magnetization from the hole kinetic and exchange energies, and magnetization suppression due to quantum fluctuations of Mn moment orientations around their mean-field ground state values. Experimental low-temperature ferromagnetic moments per Mn are obtained by superconducting quantum interference device and x-ray magnetic circular dichroism measurements in a series of (Ga,Mn)As semiconductors with nominal Mn doping ranging from similar to 2 to 8%. Hall measurements in as-grown and annealed samples are used to estimate the number of uncompensated substitutional Mn moments. Based on our comparison between experiment and theory we conclude that all these Mn moments in high quality (Ga,Mn)As materials have nearly parallel ground state alignment.

Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

2006-01-01T23:59:59.000Z

417

Substrate misorientation effects on epitaxial GaInAsSb  

DOE Green Energy (OSTI)

The effect of substrate misorientation on the growth of GaInAsSb was studied for epilayers grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy. The substrates were (100) misoriented 2 or 6{degree} toward (110), (111)A, or (111)B. The surface is mirror-like and featureless for layers grown with a 6{degree} toward (111)B misorientation, while, a slight texture was observed for layers grown on all other misorientations. The optical quality of layers, as determined by the full width at half-maximum of photoluminescence spectra measured at 4K, is significantly better for layers grown on substrates with a 6{degree} toward (111)B misorientation. The incorporation of Zn as a p-type dopant in GaInAsSb is about 1.5 times more efficient on substrates with 6{degree} toward (111)B misorientation compared to 2{degree} toward (110) misorientation. The external quantum efficiency of thermophotovoltaic devices is not, however, significantly affected by substrate misorientation.

Wang, C.A.; Choi, H.K.; Oakley, D.C. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1997-12-01T23:59:59.000Z

418

Desferal (DFO) induced Ga-67 washout from normal tissue, tumor and abscess in experimental animals  

Science Conference Proceedings (OSTI)

In the experimental animal, desferal (DFO) given intravenously washes out Ga-67 from all tissues. This effect is not uniform: blood activity is reduced very markedly, while liver activity is less affected. Maximal effect of DFO occurs if given close to the Ga-67 injection. When the time interval between the two is increased, the absolute amount of Ga-67 excreted in the urine in excess of the spontaneous excretion is reduced. Administration of DFO does not effect Ga-67 gastrointestinal excretion. In three animal tumor models (EMT-6 sarcoma in Balb/c mice, spontaneous adenocarcinoma in mice, and spontaneous adenocarcinoma in the rabbit) and in sterile abscess-bearing rats, the administration of DFO 24 hrs after Ga-67-citrate improves significantly the target-to-nontarget ratio. Animals given 50 mg/kg DFO I.V. after Ga-67 citrate showed a significant reduction in the whole-body activity as seen in a one-week follow up.

Oster, Z.H.; Som, P.; Atkins, H.L.; Brill, A.B.

1980-01-01T23:59:59.000Z

419

Low energy electron beam induced vacancy activation in GaN  

Science Conference Proceedings (OSTI)

Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5-20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive V{sub Ga}-H{sub n} complexes that can be activated by H removal during low energy electron irradiation.

Nykaenen, H.; Suihkonen, S.; Sopanen, M. [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto (Finland); Kilanski, L. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto (Finland); Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/56, 02-668 Warsaw (Poland); Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto (Finland)

2012-03-19T23:59:59.000Z

420

Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology  

DOE Green Energy (OSTI)

This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

Vernon, S.M. (Spire Corp., Bedford, MA (United States))

1993-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Apr. 2010, Volume 4, No.4 (Serial No.29) Journal of Energy and Power Engineering, ISSN 1934-8975, USA  

E-Print Network (OSTI)

-8975, USA Coordination between Fault-Ride-Through Capability and Over-current Protection of DFIG Generators the coordination between the FRT capability and over-current protection of DFIG Wind Generators in MV networks for modern variable speed DFIG [3]. DFIGs have nowadays the superiority for wind farms as compared

Bak-Jensen, Birgitte

422

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas  

SciTech Connect

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2 Multiplication-Sign 10{sup 11} cm{sup -2}) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).

Mak, W. Y.; Sfigakis, F.; Beere, H. E.; Farrer, I.; Griffiths, J. P.; Jones, G. A. C.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom)] [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom); Das Gupta, K. [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom) [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom); Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India); Klochan, O.; Hamilton, A. R. [School of Physics, University of New South Wales, Sydney (Australia)] [School of Physics, University of New South Wales, Sydney (Australia)

2013-03-11T23:59:59.000Z

423

Terrestrial Concentrator PV Modules Based on GaInP/GaAs/Ge TJ Cells and Minilens Panels  

SciTech Connect

This paper is a description of research activity in the field of cost-effective modules realizing the concept of very high solar concentration with small-aperture area Fresnel lenses and multijunction III-V cells. Structural simplicity and 'all-glass' design are the guiding principles of the corresponding development. The advanced concentrator modules are made with silicone Fresnel lens panels (from 8 up to 144 lenses, each lens is 4 times 4 cm{sup 2} in aperture area) with composite structure. GaInP/GaAs/Ge triple-junction cells with average efficiencies of 31.1 and 34.7% at 1000 suns were used for the modules. Conversion efficiency as high as 26.3% has been measured indoors in a test module using a newly developed large-area solar simulator.

Rumyantsev, V. D.; Sadchikov, N. A.; Chalov, A. E.; Ionova, E. A.; Friedman, D. J.; Glenn, G.

2006-01-01T23:59:59.000Z

424

Quaternary Bismide Alloy ByGa1-yAs1-xBix Lattice Matched to GaAs  

DOE Green Energy (OSTI)

We report on the lattice matched quaternary alloy, B{sub y}Ga{sub 1-y}As{sub 1-x}Bi{sub x} grown by molecular beam epitaxy at conditions conducive to bismuth incorporation. Incorporating a smaller atom (boron) along with the larger atom (bismuth) allows for a reduction of the epi-layer strain and lattice matching to GaAs for compositions of Bi:B{approx_equal}1.3:1. The addition of boron flux does not significantly affect the bismuth incorporation and no change in the band gap energy is observed with increasing boron content. However, excess, non-substitutional boron is incorporated which leads to an increase in hole density, as well as an increase in the density of shallow in-gap states as observed by the loss of localization of photo-excited excitons.

Deaton, D. A.; Ptak, A. J.; Alberi, K.; Mascarenhas, A.

2012-07-15T23:59:59.000Z

425

Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation dose on dc characteristics and the reliability of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 109 to 2 1014 cm-2. For the dc characteristics, there was only minimal degradation of saturation drain current (IDSS), transconductance (gm), electron mobility and sheet carrier concentration at doses below 2 1013 cm-2, while the reduction of these parameters were 15%, 9%, 41% and 16.6%, respectively, at a dose of 2 1014 cm-2. At this same dose condition, increases of 37% in drain breakdown voltage (VBR) and of 45% in critical voltage (Vcri) were observed. The improvement of device reliability was attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose.

Liu, L. [University of Florida, Gainesville; Cuervo, C.V. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

426

Harmonic Responses in 2DEG AlGaAs/GaAs HEMT Devices Due to Plasma Wave Interaction  

Science Conference Proceedings (OSTI)

Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, omega{sub p}, lie in the terahertz range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short-channel High-Electron-Mobility Transistor (HEMT) and the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results.

Hashim, A. M.; Alias, Q. I. [Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Kasai, S.; Hasegawa, H. [Research Center for Integrated Quantum Electronics, Hokkaido University North 12 West 8, Sapporo 060-8628 (Japan)

2010-03-11T23:59:59.000Z

427

Subpicosecond spin relaxation in GaAsSb multiple quantum wells K. C. Hall,a)  

E-Print Network (OSTI)

Subpicosecond spin relaxation in GaAsSb multiple quantum wells K. C. Hall,a) S. W. Leonard, and H quantum wells are measured at 295 K using time-resolved circular dichroism induced by 1.5 m, 100 fs pulses times shorter than those in InGaAs and InGaAsP wells with similar band gaps. The shorter relaxation

Van Driel, Henry M.

428

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors  

SciTech Connect

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-03-10T23:59:59.000Z

429

Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN  

DOE Green Energy (OSTI)

Etch rates up to 7,000 {angstrom}/min. for GaN are obtained in Cl{sub 2}/H{sub 2}/Ar or BCl{sub 3}/Ar ECR discharges at 1--3mTorr and moderate dc biases. Typical rates with HI/H{sub 2} are about a factor of three lower under the same conditions, while CH{sub 4}/H{sub 2} produces maximum rates of only {approximately}2,000 {angstrom}/min. The role of additives such as SF{sub 6}, N{sub 2}, H{sub 2} or Ar to the basic chlorine, bromine, iodine or methane-hydrogen plasma chemistries are discussed. Their effect can be either chemical (in forming volatile products with N) or physical (in breaking bonds or enhancing desorption of the etch products). The nitrides differ from conventional III-V`s in that bond-breaking to allow formation of the etch products is a critical factor. Threshold ion energies for the onset of etching of GaN, InGaN and InAlN are {ge} 75 eV.

Pearton, S.J.; Vartuli, C.B.; Lee, J.W.; Donovan, S.M.; MacKenzie, J.D.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States); Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); McLane, G.F. [Army Research Lab., Fort Monmouth, NJ (United States); Ren, F. [AT and T Bell Labs., Murray Hill, NJ (United States)

1996-04-01T23:59:59.000Z

430

Reliability of GaN HEMTs: Electrical and Radiation-induced Failure ...  

Science Conference Proceedings (OSTI)

Symposium, Advanced Materials for Power Electronics, Power Conditioning, and Power Conversion II. Presentation Title, Reliability of GaN HEMTs: Electrical...

431

Thermoelectric Study of InGaN-Based Materials for Thermal Energy ...  

Science Conference Proceedings (OSTI)

Presentation Title, Thermoelectric Study of InGaN-Based Materials for Thermal ... Structural and Thermal Stability Properties of Cellulose Nanocomposites with...

432

X-Ray Studies of GaN Film Grown on Si Using Electrochemical Deposition Techniques  

Science Conference Proceedings (OSTI)

This paper reports on the X-ray studies of GaN thin films deposited on Si (111) substrate at different current density using electrochemical deposition technique. The structural properties of GaN films were studied by X-ray diffraction (XRD). XRD analysis showed that hexagonal wurtzite and cubic zinc blende GaN phases were both deposited on Si (111). The lattice constants, the average size of h-GaN crystals and the in-plane (along a-axis) and out of plane (along c-axis) strains were calculated from XRD analysis.

Al-Heuseen, K.; Hashim, M. R. [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia)

2011-03-30T23:59:59.000Z

433

M4, Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers  

Science Conference Proceedings (OSTI)

On-axis reciprocal space mapping of the graded AlGaN showed tilt at each interface associated ..... New Concepts and Materials for Solar Power Conversion

434

Solidification and Microstructure Evaluation of the Ni-Ga and Co-Ni ...  

Science Conference Proceedings (OSTI)

Ni-Ga binary system is thus one of the basic binary system which forms the dominated ? ... The Effects of Natural and Marangoni Convection on the Resultant...

435

Structure and Composition Peculiarities of GaN/AlN Multiple ...  

Science Conference Proceedings (OSTI)

Thickness of AlN and GaN layers in MQWs (multiple quantum wells) were ... InAs Quantum Dots by Ballistic Electron Emission Microscopy and Spectroscopy.

436

A Paleoenvironmental Study of the 2.7 GA Tumbiana Formation, Fortescue Basin, Western Australia.  

E-Print Network (OSTI)

??A paleoecological and paleoenvironmental study was conducted on the 2.7 Ga Meentheena Member of the Tumbiana Formation, Fortescue Basin, Western Australia. It involved the integrated (more)

Coffey, Jessica

2011-01-01T23:59:59.000Z

437

Cu-Ga-Se Thin Films Prepared by a Combination of Electrodeposition and Evaporation Techniques  

Science Conference Proceedings (OSTI)

Cu-Ga-Se thin films were prepared using a combination of electrodeposition and evaporation techniques. A Cu-Se/Mo/glass precursor thin film was first prepared by galvanostatic electrodeposition. On top of this film three different thicknesses of Ga were deposited by evaporation. The Cu-Ga-Se thin films were formed by annealing the Ga/Cu-Se/Mo/glass thin film configuration in a tubular chamber with Se powder, at different temperatures. Thin films were characterized by X-ray diffraction (XRD), photocurrent spectroscopy (PS), inductively coupled plasma (ICP) analysis, and scanning electron microscopy (SEM). The detailed analysis from X-ray reveals that after annealing at 550 C the CuGaSe{sub 2} phase is formed when the thickness of Ga is 0.25 {mu}m, however at 0.5 {mu}m and 1.0 {mu}m Ga the formation of CuGa{sub 3}Se{sub 5} and CuGa{sub 5}Se{sub 8} phases is observed respectively. Band gap values were obtained using photocurrent spectroscopy.

Fernandez, A. M.; Turner, J. A.

2012-04-01T23:59:59.000Z

438

Electron and hole gas in modulation-doped GaAs/Al{sub 1-x}Ga{sub x}As radial heterojunctions  

Science Conference Proceedings (OSTI)

We perform self-consistent Schroedinger-Poisson calculations with exchange and correlation corrections to determine the electron and hole gas in a radial heterojunction formed in a GaAs/AlGaAs core-multi-shell nanowire, which is either n- or p-doped. We show that the electron and hole gases can be tuned to different localizations and symmetries inside the core as a function of the doping density/gate potential. Contrary to planar heterojunctions, conduction electrons do not form a uniform 2D electron gas (2DEG) localized at the GaAs/AlGaAs interface, but rather show a transition between an isotropic, cylindrical distribution deep in the GaAs core (low doping) and a set of six tunnel-coupled quasi-1D channels at the edges of the interface (high doping). Holes, on the other hand, are much more localized at the GaAs/AlGaAs interface. At low doping, they present an additional localization pattern with six separated 2DEGs strips. The field generated by a back-gate may easily deform the electron or hole gas, breaking the sixfold symmetry. Single 2DEGs at one interface or multiple quasi-1D channels are shown to form as a function of voltage intensity, polarity, and carrier type.

Bertoni, Andrea; Royo, Miquel; Mahawish, Farah; Goldoni, Guido [CNR-NANO S3, Istituto Nanoscienze, Via Campi 213/a, 41125 Modena (Italy); Department of Physics, University of Modena and Reggio Emilia and CNR-NANO S3, Istituto Nanoscienze, Via Campi 213/a, 41125 Modena (Italy)

2011-11-15T23:59:59.000Z

439

Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy  

Science Conference Proceedings (OSTI)

Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A. [RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074 Aachen (Germany); Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich (Germany); Hollaender, B. [Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich (Germany); Forschungszentrum Juelich GmbH, PGI9-IT, 52425 Juelich (Germany); Heuken, M. [RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074 Aachen (Germany); AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany)

2012-11-01T23:59:59.000Z

440

Analysis of the GaInP/GaAs/1-eV/Ge Cell and Related Structures for Terrestrial Concentrator Application: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the analysis of the potential of GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize three factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the old AM1.5 direct standard spectrum. (2) Standard two-layer antireflection coatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than {approx}75%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures such as a GaInP/GaAs/0.9-eV three-junction device.

Friedman, D. J.; Kurtz, S. R.; Geisz, J. F.

2002-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

On-Sun Comparison of GaInP2/GaAs Tandem Cells with Top-Cell Thickness Varied  

DOE Green Energy (OSTI)

This study compares the on-sun performance of a set of GaInP2/GaAs tandem cells with different GaInP2 top-cell thicknesses. Because high-efficiency III-V cells are best suited to concentrating photovoltaic (CPV) applications, the cells were mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for an ''air mass 1.5 global'' (AM 1.5G) or a ''low aerosol optical depth'' (Low AOD) spectrum perform the best, and (2) a simple device model using the measured direct spectra as an input gives the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emery, K. A.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-01-01T23:59:59.000Z

442

Athens County, Ohio: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Ohio: Energy Resources Ohio: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 39.3030308°, -82.12784° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.3030308,"lon":-82.12784,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

443

Athens-Clarke County - Green Business Revolving Loan Fund (Georgia...  

Open Energy Info (EERE)

Technologies Agricultural Equipment, Doors, Processing and Manufacturing Equipment, Windows, Solar Water Heat, Unspecified technologies Active Incentive Yes Implementing Sector...

444

Istanbul Mitilini Kusadasi Mykonos Athens Argostoli Corfu Dubrovnik Split Venice  

E-Print Network (OSTI)

Fuel Surcharge may apply. All fares and offers are subject to availability, may not be combinable AGREEMENT. PRICES: GN RESERVES THE RIGHT TO INCREASE PRICES IN THE EVENT OF ANY INCREASED SECURITY OR FUEL RELATED SURCHARGES, OR FARE INCREASES IMPOSED BY THE AIRLINE OR CRUISE LINE THAT MAY BE IN PLACE

Raina, Ramesh

445

Climatic design in the city : a residential building in Athens  

E-Print Network (OSTI)

The scope of this study is to examine the potential limitations and specific methods which can be used in applying climatic design principles in a densely populated urban environment. For illustrative purposes. a typical ...

Papadimitriou, Panagis A

1985-01-01T23:59:59.000Z

446

ATHANASIOS C. BOURTSALAS 12 Semelis str., Athens, Greece  

E-Print Network (OSTI)

recycling plants; and residues of recycling operations that are landfilled) b) actually composted to compost; and residues of the composting operations that are landfilled) c) tons landfilled in sanitary landfills (HYTA) and landfill gas recovered (biogas recovery in standard cubic meters per year and in Nm3 per ton landfilled

447

The consequences of high injected carrier densities on carrier localisation and efficiency droop in InGaN/GaN quantum well structures  

E-Print Network (OSTI)

in the concentration of the randomly distributed In atoms on the optical properties of InGaN/GaN quantum wells. On the basis of this comparison of theory with experiment we attribute the reduction in the S- shape temperature dependence to the saturation... , the buffer layer was grown in a Thomas Swan 6x2 metalorganic vapour-phase epitaxy reactor using trimethyl gallium (TMG), silane (SiH4) and ammonia (NH3) as precursors, with hydrogen as the carrier gas. The GaN buffer layer was deposited at 1020 C on a...

Hammersley, S; Watson-Parris, D; Dawson, P; Godfrey, M; Badcock, T; Kappers, M; McAleese, C; Oliver, R; Humphreys, C

2012-04-18T23:59:59.000Z

448

InGaAsN Solar Cells with 1.0eV Bandgap, Lattice Matched to GaAs  

DOE Green Energy (OSTI)

The design, growth by metal-organic chemical vapor deposition, and processing of an In{sub 0.07}Ga{sub 0.93}As{sub 0.98}N{sub 0.02} solar Al, with 1.0 ev bandgap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6-0.8 pm, and solar cell internal quantum efficiencies > 70% arc obwined. Optical studies indicate that defects or impurities, from InGAsN doping and nitrogen incorporation, limit solar cell performance.

Allerman, A.A.; Banas, J.J.; Gee, J.M.; Hammons, B.E.; Jones, E.D.; Kurtz, S.R.

1998-11-24T23:59:59.000Z

449

K8, HVPE Homoepitaxy of p-Type GaN on n-Type Catalyst Free ...  

Science Conference Proceedings (OSTI)

We present the growth of p-type HVPE GaN using catalyst free GaN nitride nanowires as a lattice matched substrate. The nanowires were grown using plasma...

450

Analisi dei processi di ricombinazione in diodi LED basati su GaN: caratterizzazione ottica e misure DLTS.  

E-Print Network (OSTI)

??In questo lavoro vengono analizzati i processi di ricombinazione nei diodi LED basati su GaN/InGaN mediante caratterizzazione ottica dei dispositivi e misure DLTS. In particolare (more)

La Grassa, Marco

2013-01-01T23:59:59.000Z

451

Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density  

Science Conference Proceedings (OSTI)

Molecular-beam epitaxy is used for growing structures differing in doping technique and doping level and having a high two-dimensional-electron concentration n{sub s} in the quantum well. The effect of doping combining uniform and {delta} doping on the electron-transport properties of heterostructures is investigated. A new type of structure with a two-sided silicon {delta} doping of GaAs transition layers located on the quantum-well boundaries is proposed. The largest value of electron mobility {mu}{sub H} = 1520 cm{sup 2}/(V s) is obtained simultaneously with a high electron density n{sub s} = 1.37 Multiplication-Sign 10{sup 13} cm{sup -2} at 300 K with such a doping. It is associated with decreasing electron scattering by an ionized impurity, which is confirmed by the carried out calculations.

Khabibullin, R. A., E-mail: khabibullin_r@mail.ru; Vasil'evskii, I. S. [MEPHI National Research Nuclear University (Russian Federation); Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Ponomarev, D. S. [MEPHI National Research Nuclear University (Russian Federation); Lunin, R. A.; Kulbachinskii, V. A. [Moscow State University (Russian Federation)

2011-10-15T23:59:59.000Z

452

Large energy absorption in Ni-Mn-Ga/polymer composites  

SciTech Connect

Ferromagnetic shape memory alloys can respond to a magnetic field or applied stress by the motion of twin boundaries and hence they show large hysteresis or energy loss. Ni-Mn-Ga particles made by spark erosion have been dispersed and oriented in a polymer matrix to form pseudo 3:1 composites which are studied under applied stress. Loss ratios have been determined from the stress-strain data. The loss ratios of the composites range from 63% to 67% compared to only about 17% for the pure, unfilled polymer samples.

Feuchtwanger, Jorge; Richard, Marc L.; Tang, Yun J.; Berkowitz, Ami E.; O'Handley, Robert C.; Allen, Samuel M. [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); University of California, San Diego, La Joya, California 92093 (United States); Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2005-05-15T23:59:59.000Z

453

Method of making V.sub.3 Ga superconductors  

DOE Patents (OSTI)

An improved method for producing a vanadium-gallium superconductor wire having aluminum as a component thereof is disclosed, said wire being encased in a gallium bearing copper sheath. The superconductors disclosed herein may be fabricated under normal atmospheres and room temperatures by forming a tubular shaped billet having a core composed of an alloy of vanadium and aluminum and an outer sheath composed of an alloy of copper, gallium and aluminum. Thereafter the entire billet is swage reduced to form a wire therefrom and heat treated to form a layer of V.sub.3 Ga in the interior of the wire.

Dew-Hughes, David (Bellport, NY)

1980-01-01T23:59:59.000Z

454

Lighting Enhancement of GaN LEDs by Applying p-Type Ni(P):SnO2 ...  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, Materials Science & Technology 2013. Symposium, Multifunctional Oxides. Presentation Title, Lighting Enhancement of GaN LEDs...

455

A3, Depth Resolved Strain and Composition Studies on InGaN and ...  

Science Conference Proceedings (OSTI)

... devices due to its large spontaneous polarization and conduction band offset. ... 620C with fixed beam fluxes of In and Ga under the same nitrogen plasma condition. ... Inexpensive, Non-Toxic Thermoelectric Materials for Waste Heat Recovery ..... Y5, Defect Characterization of InGaN Layer by Deep Level Transient and...

456

Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics  

DOE Green Energy (OSTI)

The project validated the use of stainless steel flexible substrate coated with silicone-based resin dielectric, developed by Dow Corning Corporation, for Cu(InGa)Se2 based photovoltaics. The projects driving force was the high performance of Cu(InGa)Se2 based photovoltaics coupled with potential cost reduction that could be achieved with dielectric coated SS web substrate.

ERTEN ESER

2012-01-22T23:59:59.000Z

457

High efficiency light emitting diode with anisotropically etched GaN-sapphire interface  

E-Print Network (OSTI)

High efficiency light emitting diode with anisotropically etched GaN- sapphire interface M. H. Lo and optimization of a light-emitting diode projection micro-stereolithography three-dimensional manufacturingGaN micro-light emitting diodes Appl. Phys. Lett. 101, 231110 (2012) A bright cadmium-free, hybrid organic

458

Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution  

E-Print Network (OSTI)

Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution Aurélien David of photonic crystal PhC -assisted gallium nitride light-emitting diodes LEDs to the existence of unextracted a promising but challenging solution towards efficient solid-state lighting. Conventional GaN-based light-emitting

Recanati, Catherine

459

GaN light-emitting diodes with Archimedean lattice photonic crystals Aurlien David,a  

E-Print Network (OSTI)

GaN light-emitting diodes with Archimedean lattice photonic crystals Aurélien David,a Tetsuo Fujii 2005; published online 16 February 2006 We study GaN-based light emitting diodes incorporating light- emitting diodes LEDs , as they could extract the emitted light otherwise trapped inside

Recanati, Catherine

460

Cubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy  

E-Print Network (OSTI)

this paper, we report on the doping characteristics of Si and Mg in the growth of cubic GaN by metalorganic vapor-phase epitaxy (MOVPE). We also report the growth of a p-n diode structure made of cubic GaN, and its characterization by electron-beam-induced-current (EBIC) and current injection measurements.

Hidenao Tanaka Member; Vapor-phase Epitaxy; Atsushi Nakadaira

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

GaN membrane-supported UV photodetectors manufactured using nanolithographic processes  

Science Conference Proceedings (OSTI)

Membrane GaN metal-semiconductor-metal (MSM) photodetector structures using nanolithographic techniques have been manufactured for the first time. Very low dark currents and unexpected high values for the responsivity have been obtained. It seems that ... Keywords: GaN, Membrane, Nanolithography, Responsivity, SEM

A. Mller; G. Konstantinidis; M. Dragoman; D. Neculoiu; A. Dinescu; M. Androulidaki; M. Kayambaki; A. Stavrinidis; D. Vasilache; C. Buiculescu; I. Petrini; A. Kostopoulos; D. Dascalu

2009-02-01T23:59:59.000Z

462

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes  

SciTech Connect

Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1-3 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes.

Sizov, V. S., E-mail: vsizov@mail.ioffe.ru; Tsatsulnikov, A. F.; Sakharov, A. V.; Lundin, W. V.; Zavarin, E. E.; Cherkashin, N. A. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Hytch, M. J. [National Center for Scientific Research (CNRS), Center for Material Elaboration and Structural Studies (CEMES) (France); Nikolaev, A. E. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Mintairov, A. M.; He Yan; Merz, J. L. [University of Notre Dame, EE Department (United States)

2010-07-15T23:59:59.000Z

463

Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts  

Science Conference Proceedings (OSTI)

The paper is concerned with the theoretical and experimental studies of the band structure and electrical properties of InAlAs/InGaAs/InAlAs/InP heterostructures containing a composite InGaAs quantum well with InAs and GaAs nanoinserts. From the Shubnikov-de Haas effect, the effective cyclotron mass m{sub c}* is determined experimentally and calculated with consideration for the nonparabolicity of the electron energy spectrum. An approach to estimation of the effective mass is proposed and tested. The approach is based on weighted averaging of the m{sub c}* of the composite quantum well's constituent materials. A first proposed heterostructure containing two InAs inserts symmetrically arranged in the quantum well makes a 26% reduction in m{sub c}* compared to m{sub c}* in the lattice-matched In{sub 0.53}Ga{sub 0.47}As quantum well possible.

Ponomarev, D. S., E-mail: ponomarev_dmitr@mail.ru; Vasil'evskii, I. S. [National Nuclear Research University 'Moscow Engineering Physics Institute (MEPhI)' (Russian Federation); Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Khabibullin, R. A. [National Nuclear Research University 'Moscow Engineering Physics Institute (MEPhI)' (Russian Federation); Kulbachinskii, V. A.; Uzeeva, N. A. [Moscow State University (Russian Federation)

2012-04-15T23:59:59.000Z

464

Power Conversion Efficiency of AlGaAs/GaAs Schottky Diode for Low-Power On-Chip Rectenna Device Application  

Science Conference Proceedings (OSTI)

A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height from theoretical value are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are well rectified by the fabricated Schottky diodes and stable DC output voltage is obtained. Power conversion efficiency up to 50% is obtained at 1 GHz with series connection between diode and load. The fabricated the n-AlGaAs/GaAs Schottky diode provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai (Malaysia); Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 Skudai Johor Malaysia (Malaysia); Osman, Mohd Nizam [Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya (Malaysia)

2011-05-25T23:59:59.000Z

465

Thermal Regime of a Cold Air Trap in Central Pennsylvania, USA: the Trough Creek Ice Mine  

SciTech Connect

Air temperatures internal and external to a talus cave (ice mine) in central Pennsylvania were measured hourly for three years. Despite its location near the base of a talus slope, the cave demonstrated the thermal characteristics of an apparently static cave, with limited connections to the external environment other than through the cave entrance. Congelation ice that lasted until late spring formed as drip or flowstone and ponded ice from the limited influx of infiltrating water during late winter/early spring. A closed period of thermal stratification and slow warming of cave air was followed by an open period in winter months during which the cave was cooled by the influx of cold dry air. Unlike the occasionally strong and localised cooling induced by the flow of cold air from vents at the base of talus slopes, static cold traps retain their cold air and have little apparent effect on surrounding biota, instead providing potential refugia for organisms that prefer colder temperatures. Published 2012. This article is a U.S. Government work and is in the public domain in the USA.

Edenborn, Harry M.; Sams, James I.; Kite, Steven

2012-08-06T23:59:59.000Z

466

Susan Trumbore Department of Earth System Science, University of California, Irvine, California, USA  

NLE Websites -- All DOE Office Websites (Extended Search)

51 a 462 51 a 462 1 Dinâmica do Carbono do Solo Susan Trumbore Department of Earth System Science, University of California, Irvine, California, USA Plínio Barbosa de Camargo Laboratório de Ecologia Isotópica do CENA/USP, Piracicaba, Brasil A quantidade de carbono orgânico (C) estocada na camada superior de 1m de solos minerais na Bacia Amazônica (~40 Pg C) representa 3% do estoque global estimado de carbono no solo. Acrescentando-se os estoques detríticos de C da superfície e carbono do solo a mais de um metro de profundidade, essa estimativa pode se quadriplicar. O potencial de resposta do carbono do solo da Amazônia às mudanças no uso da terra, clima ou composição atmosférica depende da forma e da dinâmica do carbono do solo. 30% de 10 cm do topo, mas >85% em

467

A landscape level analysis of potential excess nitrogen in east-central North Carolina, USA  

SciTech Connect

The objective of this research was to arrive at an assessment of potential excess nitrogen (N) under different land cover categories in the Neuse River Basin (North Carolina, USA) on a seasonal basis. Data on five processes (atmospheric N deposition, fertilization, net soil N mineralization, plant uptake, and denitrification) that contribute to potential excess N under different land cover categories were obtained from a literature review. Factors were also estimated to apportion annual N fluxes among different seasons of the year. Potential excess N was calculated as the difference between inputs to and outputs from an inorganic N pool. If inputs exceeded outputs, then the difference was assumed to represent N at risk of loss from the landscape to surface receiving waters and groundwaters. Land covers that were classified as potential N sources were influenced by soil N inventories and rates of net soil N mineralization (which is a natural process). The results indicated that there are large land areas in the Neuse River Basin that could be classified as either a N source or a N sink. Such areas are potentially sensitive because future changes in land use, or small alterations in N fluxes, could convert areas that are essentially in balance with respect to N biogeochemistry into the N source or N sink category. In this respect, model predictions indicate that the timing of N inputs and outputs on the landscape can be a critical determinant of potential excess N.

Garten Jr, Charles T [ORNL; Ashwood, Tom L [ORNL

2003-06-01T23:59:59.000Z

468

Response of "Alamo" switchgrass tissue chemistry and biomass to nitrogen fertilization in west Tennessee, USA  

SciTech Connect

Switchgrass (Panicum virgatum) is a perennial, warm-season grass that has been identified as a potential biofuel feedstock over a large part of North America.Weexamined above- and belowground responses to nitrogen fertilization in Alamo switchgrass grown in West Tennessee, USA. The fertilizer study included a spring and fall sampling of 5-year old switchgrass grown under annual applications of 0, 67, and 202 kgNha?1 (as ammonium nitrate). Fertilization changed switchgrass biomass allocation as indicated by root:shoot ratios. End-of-growing season root:shoot ratios (meanSE) declined significantly (P?0.05) at the highest fertilizer nitrogen treatment (2.160.08, 2.020.18, and 0.880.14, respectively, at 0, 67, and 202 kgNha?1). Fertilization also significantly increased above- and belowground nitrogen concentrations and decreased plant C:N ratios. Data are presented for coarse live roots, fine live roots, coarse dead roots, fine dead roots, and rhizomes. At the end of the growing season, there was more carbon and nitrogen stored in belowground biomass than aboveground biomass. Fertilization impacted switchgrass tissue chemistry and biomass

Garten, Jr, C. T.; Brice, D. J.; Castro, H. F.; Graham, Robin L.; Mayes, Melanie A.; Phillips, Jana R.; Post, W. M.; Schadt, Christopher W.; Wullschleger, Stan D.; Tyler, Donald D.; Jardine, Philip M.; Jastrow, J. D.; Matamala, R.; Miller, R. M.; Moran, K. K.; Vugteveen, T.; Izaurralde, Roberto C.; Thomson, Allison M.; West, Tristram O.; Amonette, James E.; Bailey, Vanessa L.; Metting, F. Blaine; Smith, Jeffery L.

2011-01-07T23:59:59.000Z

469

Soil carbon storage beneath recently established tree plantations in Tennessee and South Carolina, USA  

Science Conference Proceedings (OSTI)

Rates of soil carbon (C) accumulation under 7 recently established tree plantations in Tennessee and South Carolina (USA) were estimated by comparing soil C stocks under the plantations to adjacent reference (nonplantation) sites. Estimated rates of C accumulation in surface (0-40 cm) mineral soil were 40-170 gCm{sup -2} yr{sup -1} during the first decade following plantation establishment. Most soil C at each site was found in mineral-associated organic matter (i.e., soil C associated with the silt-clay fraction). Soils with high sand content and low initial C stocks exhibited the greatest gains in particulate organic matter C (POM-C). Labile soil C stocks (consisting of forest floor and mineral soil POM-C) became an increasingly important component of soil C storage as loblolly pine stands aged. Rates of mineral soil C accumulation were highly variable in the first decade of plantation growth, depending on location, but the findings support a hypothesis that farm to tree plantation conversions can result in high initial rates of soil C accumulation in the southeastern United States.

Garten Jr, Charles T [ORNL

2002-02-01T23:59:59.000Z

470

Recovery Act: ArcelorMittal USA Blast Furnace Gas Flare Capture  

SciTech Connect

The U.S. Department of Energy (DOE) awarded a financial assistance grant under the American Recovery and Reinvestment Act of 2009 (Recovery Act) to ArcelorMittal USA, Inc. (ArcelorMittal) for a project to construct and operate a blast furnace gas recovery boiler and supporting infrastructure at ArcelorMittals Indiana Harbor Steel Mill in East Chicago, Indiana. Blast furnace gas (BFG) is a by-product of blast furnaces that is generated when iron ore is reduced with coke to create metallic iron. BFG has a very low heating value, about 1/10th the heating value of natural gas. BFG is commonly used as a boiler fuel; however, before installation of the gas recovery boiler, ArcelorMittal flared 22 percent of the blast furnace gas produced at the No. 7 Blast Furnace at Indiana Harbor. The project uses the previously flared BFG to power a new high efficiency boiler which produces 350,000 pounds of steam per hour. The steam produced is used to drive existing turbines to generate electricity and for other requirements at the facility. The goals of the project included job creation and preservation, reduced energy consumption, reduced energy costs, environmental improvement, and sustainability.

Seaman, John

2013-01-14T23:59:59.000Z

471

Challenges for deploying dedicated, large-scale, bioenergy systems in the USA  

E-Print Network (OSTI)

In the next quarter-century, global demand for energy is expected to increase more than 25%, while some analysts are predicting that output of petroleum will soon peak. This reality of increasing demand in the face of diminishing fossil supplies is spurring interest in renewable energy sources. An array of biomass-for-bioenergy resources has been proposed, with perennial, lignocellulosic feedstocks showing the greatest potential. Assessment of potential biomass energy resources is difficult, however, as uncertainties over available land and crop yields swing reported estimates from 35 to 1135 EJ/year. In the USA, it has been suggested that more than 1 billion tonnes (910 million Mg) of biomass could be sustainably harvested, but these estimates are dependent on continued gains in plant productivity, nutrient use efficiency and soil and water conservation. Variables of population growth and increased standards of living will also affect the availability of land for these energy-producing endeavours. Several biofuel sources have been identified to include waste streams, microalgae and woody biomass plantations. With herbaceousbased systems, much effort is currently being given to corn and other starch or grain crops that can be readily converted to ethanol. While these crops may serve to jumpstart the biofuel

John H. Fike; David J. Parrish; Jeffrey Alwang; John S. Cundiff

2007-01-01T23:59:59.000Z

472

Estimates of Annual Fossil-Fuel CO2 Emitted for Each State in the U.S.A.  

NLE Websites -- All DOE Office Websites (Extended Search)

State-Level Emission Estimates State-Level Emission Estimates Estimates of Annual Fossil-Fuel CO2 Emitted for Each State in the U.S.A. and the District of Columbia for Each Year from 1960 through 2001 graphics Graphics data Data (ASCII comma-delimited) Investigators T.J. Blasing and Gregg Marland Carbon Dioxide Information Analysis Center, Environmental Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6335, U.S.A. Christine Broniak Department of Agricultural & Resource Economics, Oregon State University, Corvallis, Oregon 97331-3601 DOI 10.3334/CDIAC/00003 Period of Record 1960-2001 Methods Consumption data for coal, petroleum, and natural gas are multiplied by their respective thermal conversion factors, which are in units of heat energy per unit of fuel consumed (i.e., per cubic foot, barrel, or ton), to

473

Cr-Ga-N materials for negative electrodes in Li rechargeable batteries : structure, synthesis and electrochemical performance  

E-Print Network (OSTI)

Electrochemical performances of two ternary compounds (Cr2GaN and Cr3GaN) in the Cr-Ga-N system as possible future anode materials for lithium rechargeable batteries were studied. Motivation for this study was dealt in ...

Kim, Miso

2007-01-01T23:59:59.000Z

474

Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon Sources  

Science Conference Proceedings (OSTI)

The GaAs quantum dots in AlGaAs barriers were grown by droplet epitaxy, emitting around 700 nm in wavelength which is compatible with low cost Si based detectors. The excitation power dependent and time resolved micro-photoluminescence measurements identified optical characteristics of exciton and biexciton states which are attributed to good quantum confinements in GaAs QDs.

Ha, S.-K.; Song, J. D.; Lim, J. Y.; Choi, W. J.; Han, I. K.; Lee, J. I. [Nano Convergence Devices Center, KIST, Seoul 136-791 (Korea, Republic of); Bounouar, S.; Donatini, F.; Dang, L. S.; Poizat, J. P. [CEA/CNRS/UJF team 'Nanophysics and semiconductors', Institute Neel/CNRS-UJF, 38042 Grenoble (France); Kim, J. S. [Department of Physics, Yeungnam University, Gyeongsan 712-749 (Korea, Republic of)

2011-12-23T23:59:59.000Z

475

The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission  

Science Conference Proceedings (OSTI)

We present a study on the effects of quantum dot coverage on the properties of InAs dots embedded in GaAs and in metamorphic In0.15Ga0.85As confining layers grown by molecular beam epitaxy on GaAs substrates. We show that redshifted ... Keywords: Long wavelength emission, Molecular beam epitaxy, Quantum dot ripening, Quantum dots

G. Trevisi; L. Seravalli; P. Frigeri; M. Prezioso; J. C. Rimada; E. Gombia; R. Mosca; L. Nasi; C. Bocchi; S. Franchi

2009-03-01T23:59:59.000Z

476

Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes  

E-Print Network (OSTI)

Keywords: GaInN/GaN Light emitting diode temperature Micro-Raman Photoluminescence Electroluminescence well light emitting diode (LED) dies is analyzed by micro-Raman, photoluminescence, cathodoluminescenceJunction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting

Wetzel, Christian M.

477

Influence of post deposition annealing on Y2O3-gated GaAs MOS capacitors and their reliability issues  

Science Conference Proceedings (OSTI)

The feasibility of employing yttrium oxide (Y"2O"3) as high-k gate dielectrics for GaAs metal-oxide-semiconductor (MOS) devices has been investigated. MOS capacitors were fabricated using RF-sputtered deposited Y"2O"3 films on NH"4OH treated n-GaAs substrate. ... Keywords: GaAs, TDDB, Trapping centroid, Y2O3

P. S. Das; A. Biswas

2011-03-01T23:59:59.000Z

478

Direct measurement of interfacial structure in epitaxial Gd2O3 on GaAs (001) using scanning tunneling microscopy  

Science Conference Proceedings (OSTI)

The epitaxial growth of Gd"2O"3 on GaAs (001) has given a low interfacial density of states, resulting in the demonstration of the first inversion-channel GaAs metal-oxide-semiconductor field-effect transistor. Motivated by the significance of this discovery, ... Keywords: Electronic information, GaAs, Gd2O3, Interfacial stacking, Scanning tunneling microscopy

Y. P. Chiu; M. C. Shih; B. C. Huang; J. Y. Shen; M. L. Huang; W. C. Lee; P. Chang; T. H. Chiang; M. Hong; J. Kwo

2011-07-01T23:59:59.000Z

479

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE  

NLE Websites -- All DOE Office Websites (Extended Search)

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE Identification of the Parasitic Chemical Reactions during AlGaN OMVPE by J. R. Creighton, M. E. Coltrin, and W. G. Breiland Motivation-GaN and AlGaN alloys are ex- tremely important materials with widespread applications for optoelectronics (e.g. solid state lighting) and high power electronics. Or- ganometallic vapor phase epitaxy (OMVPE) is the primary deposition methodology, but it suf- fers from several growth chemistry anomalies. Growth rate and alloy composition are often a sensitive function of temperature and other reac- tor variables. These factors make the AlGaN OMVPE process difficult to control and in- crease the cost of the material. Conventional wisdom has been that the non-ideal OMVPE behavior is due to parasitic "pre-reactions" be-

480

The quantum efficiency of InGaAsSb thermophotovoltaic diodes  

DOE Green Energy (OSTI)

Uncoated InGaAsSb/GaSb thermophotovoltaic (TPV) diodes with 0.56 eV (2.2 {micro}m) bandgaps exhibit external quantum efficiencies of 59% at 2 {micro}m, which corresponds to an internal quantum efficiency of 95%. The structures were grown by molecular-beam epitaxy. The devices have electron diffusion lengths as long as 29 {micro}m in 8-{micro}m-wide p-InGaAsSb layers and hole diffusion lengths of 3 {micro}m in 6-{micro}m-wide n-InGaAsSb layers. The electron and hole diffusion lengths appear to increase with increasing p- and n-layer widths, respectively. These excellent minority carrier transport properties of InGaAsSb are well-suited to efficient TPV diode operation.

Martinelli, R.U.; Garbuzov, D.Z.; Lee, H.; Morris, N.; Odubanjo, T.; Taylor, G.C.; Connolly, J.C. [Sarnoff Corp., Princeton, NJ (United States)

1997-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Magnetically active vacancy related defects in irradiated GaN layers  

Science Conference Proceedings (OSTI)

We present the studies of magnetic properties of 2 MeV {sup 4}He{sup +}-irraadiated GaN grown by metal-organic chemical-vapor deposition. Particle irradiation allowed controllable introduction of Ga-vacancy in the samples. The magnetic moments with concentrations changing between 4.3 and 8.3 Multiplication-Sign 10{sup 17}cm{sup -3} showing superparamagnetic blocking at room temperature are observed. The appearance of clear hysteresis curve at T=5K with coercive field of about H{sub C} Almost-Equal-To 270 Oe suggests that the formation of more complex Ga vacancy related defects is promoted with increasing Ga vacancy content. The small concentration of the observed magnetically active defects with respect to the total Ga-vacancy concentration suggests that the presence of the oxygen/hydrogen-related vacancy complexes is the source of the observed magnetic moments.

Kilanski, L.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto Espoo (Finland); Szymczak, R. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Kruszka, R. [Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw (Poland)

2012-08-13T23:59:59.000Z

482

Electron Traps Detected in p-type GaAsN Using Deep Level Transient Spectroscopy  

DOE Green Energy (OSTI)

The GaAsN alloy can have a band gap as small as 1.0 eV when the nitrogen composition is about 2%. Indium can also be added to the alloy to increase lattice matching to GaAs and Ge. These properties are advantageous for developing a highly-efficient, multi-junction solar cell. However, poor GaAsN cell properties, such as low open-circuit voltage, have led to inadequate performance. Deep-level transient spectroscopy of p-type GaAsN has identified an electron trap having an activation energy near 0.2 eV and a trap density of at least 1016 cm-3. This trap level appears with the addition of small amounts of nitrogen to GaAs, which also corresponds to an increased drop in open-circuit voltage.

Johnston, S.; Kurtz, S.; Friedman, D.; Ptak, A.; Ahrenkiel, R.; Crandall, R.

2005-01-01T23:59:59.000Z

483

Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces  

SciTech Connect

InGaN-based light emitting diodes (LEDs) with a top pattern-nanoporous p-type GaN:Mg surface were fabricated by using a photoelectrochemical (PEC) process. The peak wavelengths of electroluminescence (EL) and operating voltages were measured as 461.2 nm (3.1 V), 459.6 nm (9.2 V), and 460.1 nm (3.3 V) for conventional, nanoporous, and pattern-nanoporous LEDs using 20 mA operation current. The EL spectrum of the nanoporous LED had a larger blueshift phenomenon as a result of a partial compression strain release in the InGaN active layer through the formation of a top nanoporous surface. The light output power had 12.1% and 26.4% enhancements for the nanoporous and the pattern-nanoporous LEDs compared with conventional LEDs. The larger operating voltage of the nanoporous LED was due to the non-ohmic contact on the PEC treated p-type GaN:Mg surface. By using a pattern-nanoporous p-type GaN:Mg structure, the operating voltage of the pattern-nanoporous LED was reduced to 3.3 V. A lower compression strain in the InGaN active layer and a higher light extraction efficiency at the top nanoporous surface were observed in pattern-nanoporous LEDs for higher efficiency nitride-based LED applications.

Yang, C.C.; Lin, C.F.; Lin, C.M.; Chang, C.C.; Chen, K.T.; Chien, J.F.; Chang, C.Y. [Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)

2008-11-17T23:59:59.000Z

484

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy  

SciTech Connect

The effects of NH{sub 3} flow, group III flux, and substrate growth temperature on indium incorporation and surface morphology have been investigated for bulk InGaN films grown by ammonia molecular beam epitaxy. The incorporation of unintentional impurity elements (H, C, O) in InGaN films was studied as a function of growth temperature for growth on polar (0001) GaN on sapphire templates, nonpolar (1010) bulk GaN, and semipolar (1122), (2021) bulk GaN substrates. Enhanced indium incorporation was observed on both (1010) and (2021) surfaces relative to c-plane, while reduced indium incorporation was observed on (1122) for co-loaded conditions. Indium incorporation was observed to increase with decreasing growth temperature for all planes, while being relatively unaffected by the group III flux rates for a 1:1 Ga:In ratio. Indium incorporation was found to increase at the expense of a decreased growth rate for higher ammonia flows; however, smooth surface morphology was consistently observed for growth on semipolar orientations. Increased concentrations of oxygen and hydrogen were observed on semipolar and nonpolar orientations with a clear trend of increased hydrogen incorporation with indium content.

Browne, David A.; Young, Erin C.; Lang, Jordan R.; Hurni, Christophe A.; Speck, James S. [Materials Department, University of California Santa Barbara, Santa Barbara, California 93106 (United States)

2012-07-15T23:59:59.000Z

485

Local structure and vibrational properties of alpha'-Pu martensitein Ga-stabilized delta-Pu  

Science Conference Proceedings (OSTI)

Extended x-ray absorption fine structure spectroscopy (EXAFS) is used to investigate the local atomic environment and vibrational properties of plutonium and gallium atoms in the {alpha}{prime} and {delta} phases of a mixed phase Pu-Ga alloy. EXAFS results measured at low temperature compare the structure of the mixed phase sample with a single-phase {delta}-Pu sample. EXAFS spectral components attributed to both {alpha}{prime}-Pu and {delta}-Pu were observed in the mixed phase sample. Ga K-edge EXAFS spectra indicate local atomic environments similar to the Pu LIII-edge EXAFS results, which suggests that Ga is substitutional for Pu atoms in both the monoclinic {alpha}{prime}-Pu and the fcc {delta}-Pu structures. In {delta}-Pu, we measure a Ga-Pu bond length contraction of 0.11 Angstroms with respect to the Pu-Pu bond length. The corresponding bond-length contraction around Ga in {alpha}{prime}-Pu is only 0.03 Angstroms. Results from temperature-dependent Pu LIII-edge EXAFS measurements are fit to a correlated Debye model, and a large difference in the Pu-Pu bond Debye temperature is observed for the {alpha}{prime} and {delta} phases: {theta}{sub cD}({alpha}{prime})=159{+-}13 K versus {theta}{sub cD}({delta})=120{+-}3 K. The corresponding analysis for the Ga K EXAFS determines a Ga-Pu bond Debye temperature of {theta}{sub cD}({delta})=188{+-}12 K in the {delta}-Pu phase. These results are related to the observed solubility of Ga in {delta}-Pu, the ''stabilization'' of {delta}-Pu by Ga at room temperature, and the insolubility of Ga in {alpha}{prime}-Pu.

Nelson, E.J.; Blobaum, K.J.M.; Wall, M.A.; Allen, P.G.; Schwartz,A.J.; Booth, C.H.

2003-02-26T23:59:59.000Z

486

GaInAsSb materials for thermophotovoltaics  

DOE Green Energy (OSTI)

Ga{sub 1{minus}x}In{sub x}As{sub 1{minus}y}Sb{sub y} (0.06 < x < 0.2, 0.05 < y < 0.18) epilayers were grown lattice-matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE). For lattice-matched alloys, mirror-like surface morphologies were obtained by both OMVPE and MBE. The 4K photoluminescence (PL) of all layers had a full-width at half-maximum (FWHM) of less than 10 meV for PL peak emission < 1.9 {micro}m. PL FWHM increased to 30 meV for peak emission {approximately}2.12 {micro}m for OMVPE-grown layers. Nominally undoped layers are p-type with typical 300 K hole concentration of {approximately}9 {times} 10{sup 15} cm{sup {minus}3} and hole mobility {approximately}450 to 580 cm{sup 2}/V-s for OMVPE-grown layers, p- and n-type doping is reported for layers grown with either technique. The ideality factor of diode structures is {approximately}2 for both techniques.

Wang, C.A.; Turner, G.W.; Manfra, M.J.; Choi, H.K.; Spears, D.L. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.

1996-12-01T23:59:59.000Z

487

Application of a modified denitrifying bacteria method for analyzing groundwater and vadose zone pore water nitrate at the Hanford Site, WA, USA.  

E-Print Network (OSTI)

zone pore water nitrate at the Hanford Site, WA, USA. Woods,and Conrad, Mark The Hanford Site in southern WashingtonL have been reported for Hanford groundwaters, where nitrate

Woods, Katharine N.; Singleton, Michael J.; Conrad, Mark

2003-01-01T23:59:59.000Z

488

The Meaning of Success: Young Women and High Academic Achievement in Rapidly Developed Areas. A Comparative Study of Contemporary Rural Vermont, USA and Leinster, Ireland.  

E-Print Network (OSTI)

??This thesis is an in-depth, comparative international study on young womens high academic achievement in rural Leinster (Ireland) and Vermont (USA). The research analyses how (more)

Fuller, Wendy Irene

2010-01-01T23:59:59.000Z

489

Ga-doped ZnO grown by pulsed laser deposition in H2: the roles of Ga and H  

DOE Green Energy (OSTI)

Highly conductive thin films of ZnO doped with Ga were grown by pulsed-laser deposition (PLD) with 10 mTorr of H2 in the growth chamber. Compared with a more conventional method of producing conductive films of ZnO, i.e., growth in O2 followed by annealing in forming gas (5% H2 in Ar), the H2 method requires no post-growth anneal and also produces higher carrier concentrations and lower resistivities with better depth uniformity. As an example, a 65-nm-thick sample had a room-temperature mobility of 32 cm2/V-s, a concentration of 6.8 x 1020 cm-3, and a resistivity of 2.9 x 10^-4 ohm-cm. From a scattering model, the donor and acceptor concentrations were calculated as 8.9 x 1020 and 2.1 x 10^20 cm-3, respectively, as compared to the Ga and H concentrations of 11 x 10^20 and 1 x 10^20 cm-3. Thus, H does not play a significant role as a donor in this type of ZnO

Look, David; Droubay, Timothy; McCloy, John S.; Zhu, Zihua; Chambers, Scott A.

2011-01-11T23:59:59.000Z

490

Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices  

Science Conference Proceedings (OSTI)

A set of AlGaN/GaN high electron mobility transistor devices has been investigated using step-stress testing, and representative samples of undegraded, source-side-degraded, and drain-side-degraded devices were examined using electron microscopy and microanalysis. An unstressed reference sample was also examined. All tested devices and their corresponding transmission electron microscopy samples originated from the same wafer and thus received nominally identical processing. Step-stressing was performed on each device and the corresponding current voltage characteristics were generated. Degradation in electrical performance, specifically greatly increased gate leakage current, was shown to be correlated with the presence of crystal defects near the gate edges. However, the drain-side-degraded device showed a surface pit on the source side, and another region of the same device showed no evidence of damage. Moreover, significant metal diffusion into the barrier layer from the gate contacts was also observed, as well as thin amorphous oxide layers below the gate metal contacts, even in the unstressed sample. Overall, these observations emphasize that gate-edge defects provide only a partial explanation for device failure.

Johnson, Michael [Arizona State University; Cullen, David A [ORNL; Liu, Lu [University of Florida; Kang, Tsung Sheng [University of Florida, Gainesville; Ren, F. [University of Florida; Chang, C. Y. [University of Florida; Pearton, S. J. [University of Florida; Jang, Soohwan [University of Florida, Gainesville; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Smith, David J [Arizona State University

2012-01-01T23:59:59.000Z

491

Selection and improvement of herbaceous energy crops for the southeastern USA  

SciTech Connect

The general aim of this research program was to screen herbaceous species and evaluate management practices for biomass production on marginal soils in Alabama and the southeastern USA. The program started with a 5 year evaluation of selected warm-cool season species rotations. Rainfall during the 5-year program was mostly below the long-term average, except in 1989 when it was above normal. Due to low rainfall yields of perennial species took longer than expected to reach full production potential, increasing each year throughout the 5-year program. Cave-in-Rock'' switchgrass, sericea lespedeza and johnsongrass provided the highest yields from the warm season perennial species. The most significant trend in biomass composition was the notably high lignin and nitrogen content of sericea lespedeza when compared to the perennial grass species. During the course of the program additional experiments were initiated which new species and additional varieties of switchgrass. Napiergrass and energy cane provided yields from 24 to 32 Mg biomass ha{sup {minus}1} in the second and third year after establishment, but sustainability of these yields are uncertain because no severely cold weather was experienced during the experimental period. In the second year after establishment Alamo'' switchgrass yielded 17.5 Mg biomass ha{sup {minus}1}. This progress represented a major improvement on yields and production costs when compared to the original experiments. If yields of this level can be sustained and possibly improved a little more it is likely that the production basis for an economically viable herbaceous biomass-to-biofuel industry will be achieved in another 5 years. Future work should concentrate on optimizing management factors such as row spacing and harvesting regime, and on improving yield by plant breeding and selection. 5 refs., 3 figs., 29 tabs.

Bransby, D.I.; Sladden, S.E.; Kee, D.E. (Auburn Univ., AL (USA). Dept. of Agronomy and Soils)

1990-07-01T23:59:59.000Z

492

A retrospective tiered environmental assessment of the Mount Storm Wind Energy Facility, West Virginia,USA  

SciTech Connect

Bird and bat fatalities from wind energy projects are an environmental and public concern, with post-construction fatalities sometimes differing from predictions. Siting facilities in this context can be a challenge. In March 2012 the U.S. Fish and Wildlife Service (USFWS) released Land-based Wind Energy Guidelines to assess collision fatalities and other potential impacts to species of concern and their habitats to aid in siting and management. The Guidelines recommend a tiered approach for assessing risk to wildlife, including a preliminary site evaluation that may evaluate alternative sites, a site characterization, field studies to document wildlife and habitat and to predict project impacts, post construction studies to estimate impacts, and other post construction studies. We applied the tiered assessment framework to a case study site, the Mount Storm Wind Energy Facility in Grant County, West Virginia, USA, to demonstrate the use of the USFWS assessment approach, to indicate how the use of a tiered assessment framework might have altered outputs of wildlife assessments previously undertaken for the case study site, and to assess benefits of a tiered ecological assessment framework for siting wind energy facilities. The conclusions of this tiered assessment for birds are similar to those of previous environmental assessments for Mount Storm. This assessment found risk to individual migratory tree-roosting bats that was not emphasized in previous preconstruction assessments. Differences compared to previous environmental assessments are more related to knowledge accrued in the past 10 years rather than to the tiered structure of the Guidelines. Benefits of the tiered assessment framework include good communication among stakeholders, clear decision points, a standard assessment trajectory, narrowing the list of species of concern, improving study protocols, promoting consideration of population-level effects, promoting adaptive management through post-construction assessment and mitigation, and sharing information that can be used in other assessments.

Efroymson, Rebecca Ann [ORNL; Day, Robin [No Affiliation; Strickland, M. Dale [Western EcoSystems Technology

2012-11-01T23:59:59.000Z

493

Space Climate Manifestation in Earth Prices - from Medieval England Up to Modern Usa  

E-Print Network (OSTI)

In this study we continue to search for possible manifestations of space weather influence on prices of agricultural products and consumables. We note that the connection between solar activity and prices is based on the causal chain that includes several nonlinear transition elements. These non-linear elements are characterized by threshold sensitivity to external parameters and lead to very inhomogeneous local sensitivity of the price to space weather conditions. It is noted that "soft type" models are the most adequate for description of this class of connections. Two main observational effects suitable for testing causal connections of this type of sensitivity are considered: burst-like price reactions on changes in solar activity and price asymmetry for selected phases of the sunspot cycle. The connection, discovered earlier for wheat prices of Medieval England, is examined in this work on the basis of another 700-year data set of consumable prices in England. Using the same technique as in the previous part of our work (Pistilnik and Yom Din 2004) we show that statistical parameters of the interval distributions for price bursts of consumables basket and for sunspot minimum states are similar one to another, like it was reported earlier for wheat price bursts. Possible sources of these consistencies betw