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1

Proc. Natl. Acad. Sci. USA Vol. 95, pp. 1175711762, September 1998  

E-Print Network (OSTI)

Proc. Natl. Acad. Sci. USA Vol. 95, pp. 11757­11762, September 1998 Evolution Rapid hybrid of Georgia, Athens, GA, July 27, 1998 (received for review January 27, 1998) ABSTRACT Hybrid or ``recombinational'' speciation re- fers to the origin of a new homoploid species via hybridization between

Rieseberg, Loren

2

E-Print Network 3.0 - atlanta ga usa Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Physics and Astronomy, Georgia State University, Atlanta, Georgia... 30303, USA 3 NDP Optronics, Mableton, Georgia 30126, USA *Corresponding author: wzshen... -band imaging device,...

3

Athens, Ohio: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Athens, Ohio: Energy Resources Athens, Ohio: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 39.3292396°, -82.1012554° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.3292396,"lon":-82.1012554,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

4

Athens Utility Board | Open Energy Information  

Open Energy Info (EERE)

Athens Utility Board Athens Utility Board Place Tennessee Utility Id 947 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Electric Power Rates - Residential Residential General Power Rate - Schedule GSA: Commercial General Power Rate - Schedule GSA: Demand 1000KW-5000KW Commercial General Power Rate - Schedule GSA: Demand 50KW-1000KW Commercial General Power Rate-Schedule GSB Industrial Outdoor Lighting(Part A) Lighting Outdoor Lighting: High Pressure Sodium 1000W Lighting Outdoor Lighting: High Pressure Sodium 100W Lighting

5

published in Proc. Int. Conf. Parallel Architectures and Languages, Athens, July, 1994 Lecture Notes in Computer Science, Vol. 817, SpringerVerlag, Berlin, 1994, pp. 313322  

E-Print Network (OSTI)

published in Proc. Int. Conf. Parallel Architectures and Languages, Athens, July, 1994 Lecture Notes in Computer Science, Vol. 817, Springer­Verlag, Berlin, 1994, pp. 313­322 Run­Time Optimization. Szymanski Department of Computer Science, Rensselaer Polytechnic Institute Troy, New York 12180­3590 USA

Bystroff, Chris

6

Heat Island Research at the University of Athens  

NLE Websites -- All DOE Office Websites (Extended Search)

Heat Island Research at the University of Athens Heat Island Research at the University of Athens Speaker(s): Mattheos Santamouris Date: June 4, 2008 - 12:00pm Location: 90-3122 Seminar Host/Point of Contact: Hashem Akbari Athens, as many other metropolitan areas, is experiencing a severe summer heat island. We will present measurements of urban canyon heat islands in Athens and discuss the effects on building energy use, urban environment, and air quality. Appropriate heat-island mitigation technologies include use of cool materials for urban surfaces (roofs and pavements) and shade trees. Advances in development of cool roofing and paving materials including traditional cool surfaces (white and light-colored materials), near-infrared cool colored materials, and experimental highly reflecting thermochromic coatings will be discussed. Finally, we will discuss the

7

City of Athens, Alabama (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

Athens Athens Place Alabama Utility Id 944 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Rate Commercial Industrial Rate Industrial Industrial Rate(Over 1000 kw to 5000 kw) Industrial Residential Rate Residential Average Rates Residential: $0.0872/kWh Commercial: $0.0959/kWh Industrial: $0.0818/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=City_of_Athens,_Alabama_(Utility_Company)&oldid=40929

8

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network (OSTI)

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

9

9th Conference of Hel.A.S. Athens (20 24 September 2009)  

E-Print Network (OSTI)

9th Conference of Hel.A.S. Athens (20 ­ 24 September 2009) Particle Acceleration Process through. Efthymiopoulos Research Center for Astronomy & Applied Mathematics Academy of Athens GREECE #12;9th Conference. #12;9th Conference of Hel.A.S. Athens (20 ­ 24 September 2009) We have performed..... Calculations

Anastasiadis, Anastasios

10

West Athens, California: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Athens, California: Energy Resources Athens, California: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.9233482°, -118.3034071° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.9233482,"lon":-118.3034071,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

11

E-Print Network 3.0 - athens tandem accelerator Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

results for: athens tandem accelerator Page: << < 1 2 3 4 5 > >> 1 Workshop on Thermonuclear Reaction Rates for Astrophysics Applications Summary: , particle physics, neutrino...

12

SREL Reprint #3120  

NLE Websites -- All DOE Office Websites (Extended Search)

1Department of Environmental Health Science, University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802,...

13

University of Tennessee, USA Georgia State University, USA Johns Hopkins Medicine Institute, USA University of Virginia, USA  

E-Print Network (OSTI)

#12; : University of Tennessee, USA Georgia State University, USA Johns Hopkins Medicine Institute, USA University of Virginia, USA Columbia University, USA Queen's University, Canada University of Akron, USA

Wang, Jianbo

14

SREL Reprint #3115  

NLE Websites -- All DOE Office Websites (Extended Search)

and W.M. Ford5 1Department of Biology, Radford University, Box 6931, Radford, VA 24142, USA 2Environmental Health Sciences, University of Georgia, Athens, GA 30602, USA 3Savannah...

15

SREL Reprint #3114  

NLE Websites -- All DOE Office Websites (Extended Search)

1Savannah River Ecology Laboratory, University of Georgia, PO Drawer E, Aiken, SC 29802, USA 2Institute of Ecology, University of Georgia, Athens, GA 30602, USA 3Department of...

16

2014 ASHRAE/IBPSA-USA Building Simulation Conference  

E-Print Network (OSTI)

2014 ASHRAE/IBPSA-USA Building Simulation Conference Atlanta, GA September 10-12, 2014 BUILDING) are created each day [IBM 2012]. Furthermore, the rate is increasing so quickly that 90% of the data

Tennessee, University of

17

Great Social Scene: Athens is home to a thriving local music scene that has produced  

E-Print Network (OSTI)

Activities: Athens and the surrounding area are home to Bulldog, Intramural and county sports teams, climbing. Bioinformatics provides the frame- work and tools to mine and analyze the avalanche of data that is emerging from nearly every life science discipline including crop genomics, biofuels, cancer, ecology, human health

Arnold, Jonathan

18

ORGANIZATION Aarti Gupta (NEC, USA)  

E-Print Network (OSTI)

ORGANIZATION CHAIRS Aarti Gupta (NEC, USA) Panagiotis Manolios (Georgia Tech, USA) LOCAL ARRANGEMENTS Jeremy Levitt (Mentor Graphics, USA) Vigyan Singhal (Oski, USA) PANELS Andreas Kuehlmann (Cadence, USA) TUTORIALS Leonardo de Moura (SRI, USA) WEBMASTERS Sudarshan Srinivasan (Georgia Tech, USA) Daron

Manolios, Panagiotis "Pete"

19

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a  

E-Print Network (OSTI)

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C Richard R. King,2 and Harry A. Atwater1 1 California Institute of Technology, Pasadena, California 91125, USA 2 Spectrolab, Inc., Sylmar, California 91342, USA 3 Aonex Technologies, Pasadena, California 91106

Atwater, Harry

20

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS  

E-Print Network (OSTI)

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS Robyn C. Law 1 1 Spectrolab, Inc., A Boeing Company, Sylmar, California 91342, USA 2 California Institute of Technology, Pasadena, California 91125, USA ABSTRACT Spectrolab has demonstrated the first lattice matched In

Atwater, Harry

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1  

E-Print Network (OSTI)

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1 Jie Lian,2,3 Wei Lu,4 and Lumin Wang1,5,* 1 Department of Materials Science and Engineering, University Arbor, Michigan 48109, USA 3 Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer

Lu, Wei

22

SREL Reprint #3112  

NLE Websites -- All DOE Office Websites (Extended Search)

Athens, GA 30602, USA 3Canadian Wildlife Service, 300-2365 Albert Street, Regina, Saskatchewan, Canada S4P 4K1 4Department of Biology, University of Regina, Regina, Saskatchewan,...

23

SREL Reprint #3193  

NLE Websites -- All DOE Office Websites (Extended Search)

R. Hickman1,3, and Thomas M. Luhring1,4 1Savannah River Ecology Laboratory, Aiken, SC, USA 2Warnell School of Forestry and Natural Resources, University of Georgia, Athens, GA,...

24

SREL Reprint #3169  

NLE Websites -- All DOE Office Websites (Extended Search)

and John C. Maerz3 1Odum School of Ecology, University of Georgia, Athens, GA 30602, USA 2Department of Biological Sciences, University of New Hampshire, 46 College Road,...

25

Offshore Wind Power USA  

Energy.gov (U.S. Department of Energy (DOE))

The Offshore Wind Power USA conference provides the latest offshore wind market updates and forecasts.

26

Genetic diversity and structure in two species of Leavenworthia with self-incompatible and self-compatible populations  

E-Print Network (OSTI)

1 Genetic Diversity and Structure in Two Species of Leavenworthia With Self- incompatible and Self-compatible Populations Vanessa A. Koelling*, J. L. Hamrick, and Rodney Mauricio* *Department of Genetics, University of Georgia, Athens, GA... 30602, USA, Department of Plant Biology, University of Georgia, Athens, GA 30602, USA Keywords: Leavenworthia, self-incompatibility, selfing, genetic diversity, mating system Corresponding author: Vanessa A. Koelling, Current Address: Department...

Koelling, Vanessa A.; Hamrick, J.L.; Mauricio, Rodney

2011-01-01T23:59:59.000Z

27

Forisk Consulting Forisk Consulting LLC PO Box 5070 Athens, GA 30604 770.725.8447 hclark@forisk.com  

E-Print Network (OSTI)

to timber markets, wood bioenergy, and forest operations. Our experience and interests focus on better@forisk.com Date: July 2013 Re: Market Analyst About Forisk Consulting Forisk conducts applied research related in the forest industry, wood bioenergy and timberland investing sectors. Forisk specializes in analyzing

Mazzotti, Frank

28

EWEC 2006, Athens, The Anemos Wind Power Forecasting Platform Technology The Anemos Wind Power Forecasting Platform Technology -  

E-Print Network (OSTI)

EWEC 2006, Athens, The Anemos Wind Power Forecasting Platform Technology 1 The Anemos Wind Power a professional, flexible platform for operating wind power prediction models, laying the main focus on state models from all over Europe are able to work on this platform. Keywords: wind energy, wind power

Boyer, Edmond

29

Terahertz absorption in AlGaAs films and detection using heterojunctions  

E-Print Network (OSTI)

a Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA b NDP Optronics, LLC-mail address: uperera@gsu.edu (A.G.U. Perera). 1 Also at NDP Optronics LLC. Infrared Physics & Technology 47

Perera, A. G. Unil

30

Bruce R. Kowalski (USA) Barry M Wise (USA)  

E-Print Network (OSTI)

Bruce R. Kowalski (USA) Barry M Wise (USA) Paul Geladi (SE) Alex Freitas (UK) Lutgarde Buydens (NL) Jose Cardoso de Menezes (PT) Paul J. Gemperline (USA) Rasmus Bro (DK) Roma Tauler (ES) Steven D. Brown (USA) Beata Walczak (PL) Klaas Faber (NL) Patricia Heussen (UNILEVER, NL) Peter de B. Harrington (USA

Ferreira, Márcia M. C.

31

The synthesis and origin of the pectic polysaccharide rhamnogalacturonan II … insights from nucleotide sugar formation and diversity  

NLE Websites -- All DOE Office Websites (Extended Search)

ARTICLE ARTICLE published: 11 May 2012 doi: 10.3389/fpls.2012.00092 The synthesis and origin of the pectic polysaccharide rhamnogalacturonan II - insights from nucleotide sugar formation and diversity Maor Bar-Peled 1 *, Breeanna R. Urbanowicz 2 and Malcolm A. O'Neill 2 1 Department of Plant Biology, Complex Carbohydrate Research, The University of Georgia, Athens, GA, USA 2 Complex Carbohydrate Research Center, The University of Georgia, Athens, GA, USA Edited by: Seth DeBolt, University of Kentucky, USA Reviewed by: Henrik Scheller, Lawrence Berkeley National Laboratory, USA Jesper Harholt, University of Copenhagen, Denmark *Correspondence: Maor Bar-Peled , Department of Plant Biology, Complex Carbohydrate Research Center, University of Georgia, 315 Riverbend Road, Athens, GA 30602, USA. e-mail: peled@ccrc.uga.edu There is compelling evidence showing that the structurally

32

Vestas USA | Open Energy Information  

Open Energy Info (EERE)

Vestas USA Jump to: navigation, search Name: Vestas USA Place: Rolling Meadows, Illinois Zip: IL 60008-4030 Sector: Wind energy Product: Vestas Wind Systems American arm....

33

Orion Registrar, Inc., USA  

NLE Websites -- All DOE Office Websites (Extended Search)

Registrar, Inc., USA Registrar, Inc., USA Certificate of Registration This is to certify the Environmental Management System of: National Renewable Energy Laboratory 15013 Denver West Parkway Golden, Colorado 80401 USA Has been assessed by Orion Registrar and found to be in compliance with the following Environmental Management Standard: ISO 14001:2004 The Environmental Management System is applicable to: Research, Development, Commercialization and Deployment of Renewable Energy and Energy Efficiency Technologies This Scope is Applicable to All Sites The Registration period is from February 18, 2013 to August 23, 2014. This registration is subject to the company maintaining its system to the required standard, and applicable exceptions, which will be monitored by Orion.

34

Western Michigan University, Kalamazoo, USA  

E-Print Network (OSTI)

Western Michigan University, Kalamazoo, USA Michael Backer Auslandssemester USA:WMU, Fall 20101 #12, Unterkunft Auslandssemester USA:WMU, Fall 20102 #12;Bewerbung Schriftliche Bewerbung Notenspiegel in beiden Sprachen Auslandssemester USA:WMU, Fall 20103 #12;Bewerbung Auswahlgespräch mit Domik und Blömer

Hellebrand, Sybille

35

usa | OpenEI  

Open Energy Info (EERE)

usa usa Dataset Summary Description Estimates for each of the 50 states and the entire United States show Source Wind Powering America Date Released February 04th, 2010 (4 years ago) Date Updated April 13th, 2011 (3 years ago) Keywords annual generation installed capacity usa wind Data application/vnd.ms-excel icon Wind potential data (xls, 102.4 KiB) Quality Metrics Level of Review Some Review Comment Temporal and Spatial Coverage Frequency Time Period License License Other or unspecified, see optional comment below Comment Work of the U.S. Federal Government. Rate this dataset Usefulness of the metadata Average vote Your vote Usefulness of the dataset Average vote Your vote Ease of access Average vote Your vote Overall rating Average vote Your vote Comments Login or register to post comments

36

J.M. Arblaster G.A. Meehl A.M. Moore Interdecadal modulation of Australian rainfall  

E-Print Network (OSTI)

G.A. Meehl National Center for Atmospheric Research, PO Box 300 Boulder, Colorado, 80307-3000, USA E, in the tropical Pacific, usually indicated by a large negative Southern Oscillation Index (SOI) value. Flooding-mail: jma@ucar.edu A.M. Moore Program in Atmospheric and Oceanic Sciences, University of Colorado, USA #12

Arblaster, Julie

37

ORGANIZATION Panagiotis Manolios (GeorgiaTech, USA)  

E-Print Network (OSTI)

ORGANIZATION CHAIRS Panagiotis Manolios (GeorgiaTech, USA) Matthew Wilding (Rockwell Collins, USA) PUBLICATIONS Ruben Gamboa (U. Wyoming, USA) WEBMASTERS Sudarshan Srinivasan (Georgia Tech, USA) Daron Vroon (Georgia Tech, USA) PROGRAM COMMITTEE Ruben Gamboa (U. Wyoming, USA) David Greve (Rockwell Collins, USA

Manolios, Panagiotis "Pete"

38

Meridian Energy USA | Open Energy Information  

Open Energy Info (EERE)

Energy USA (Redirected from Cleantech America) Jump to: navigation, search Logo: Meridian Energy USA Name: Meridian Energy USA Address: 6200 Stoneridge Mall Road, Suite 300 Place:...

39

FRONIUS USA LLC | Open Energy Information  

Open Energy Info (EERE)

FRONIUS USA LLC Jump to: navigation, search Name: FRONIUS USA LLC Place: Brighton, Michigan 48116 USA, Michigan Sector: Solar Product: Focused on welding machines and solar...

40

Barloworld Supply Chain Software USA  

E-Print Network (OSTI)

Barloworld Supply Chain Software USA Supply Chain Consultant / Inventory Analyst Position November 2011 #12;Barloworld SCS USA ­ Supply Chain / Inventory Analyst Aug 2011 Page 2 of 4 INTRODUCTION Barloworld Supply Chain Software (SCS) USA would like to invite you to apply for a Supply Chain

Heller, Barbara

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

ssp062 1000..1014  

NLE Websites -- All DOE Office Websites (Extended Search)

00-1014 00-1014 * September 2009 RESEARCH ARTICLE Arabidopsis thaliana T-DNA Mutants Implicate GAUT Genes in the Biosynthesis of Pectin and Xylan in Cell Walls and Seed Testa Kerry H. Caffall a,b , Sivakumar Pattathil b , Sarah E. Phillips a,b , Michael G. Hahn b,c and Debra Mohnen a,b,1 a Department of Biochemistry and Molecular Biology, University of Georgia, Athens, GA 30602, USA b Complex Carbohydrate Research Center, BioEnergy Science Center, 315 Riverbend Road, University of Georgia, Athens, GA 30602, USA c Department of Plant Biology, University of Georgia, Athens, GA 30602, USA ABSTRACT Galacturonosyltransferase 1 (GAUT1) is an a1,4-D-galacturonosyltransferase that transfers galacturonic acid from uridine 5#-diphosphogalacturonic acid onto the pectic polysaccharide homogalacturonan (Sterling et al., 2006). The 25-member Arabidopsis thaliana GAUT1-related gene family

42

Biochem. J.  

NLE Websites -- All DOE Office Websites (Extended Search)

29, 29, 533-543 (Printed in Great Britain) doi:10.1042/BJ20100238 533 Identification of a novel UDP-sugar pyrophosphorylase with a broad substrate specificity in Trypanosoma cruzi Ting YANG*† and Maor BAR-PELED†‡ 1 *Department of Biochemistry and Molecular Biology, University of Georgia, Athens, GA 30602, U.S.A., †Complex Carbohydrate Research Center (CCRC), University of Georgia, Athens, GA 30602, U.S.A., and ‡Department of Plant Biology, University of Georgia, Athens, GA 30602, U.S.A. The diverse types of glycoconjugates synthesized by trypanoso- matid parasites are unique compared with the host cells. These glycans are required for the parasite survival, invasion or evasion of the host immune system. Synthesis of those glycoconjugates requires a constant supply of nucleotide-sugars (NDP-sugars), yet little is known about how these NDP-sugars are made

43

PNE WIND USA II  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

PNE WIND USA II PNE WIND USA II 1 PNE Wind USA Tribal Energy Partnerships Cherokee & Chilocco Wind Parks Buchholz wind farm, Germany André De Rosa Managing Director Andre.DeRosa@PNEWind.com p. (312) 919-8042 Hot Springs NP M is s i s s i ppi M iss is s i pp i Mis si ss ip p i M ississippi M iss iss ippi M i ss i ss i pp i M is s issippi Missis sip pi M i s s is s ip p i Bonny State Park Bonny State Park Buffalo River State Park Buffalo River State Park Caprock Caprock Canyons Canyons State Park State Park Robbers Cave State Park Robbers Cave State Park Clinton State Park Clinton State Park Hillsdale State Park Hillsdale State Park Indian Cave State Park Indian Cave State Park Lake Murray State Park Lake Murray State Park Lake of Lake of the Ozarks the Ozarks St Park St Park Little River State Park Little River State Park Palo Duro

44

Ammonia at Blodgett Forest, Sierra Nevada, USA  

E-Print Network (OSTI)

Forest, Sierra Nevada, USA Marc L. Fischer and DavidRd. , Berkeley CA, 94720, USA Corresponding author address:

Fischer, Marc L.; Littlejohn, David

2007-01-01T23:59:59.000Z

45

, Effect Publishing, New York, USA, 1991 , Hermitage Publishing, New Jersey, USA, 1995  

E-Print Network (OSTI)

1 . «», Effect Publishing, New York, USA, 1991 « », Hermitage Publishing, New Jersey, USA and hints at manifestations of the metaphysical." ("World Literature Today" , Automn, 1995, USA, USA) « . , , , , , "" , » (, 10, 2004) «"" . -- , , -- , ». ( , 69, 2004

Karpovsky, Mark

46

A Fixed Point Analysis of a Gene Pool GA with Mutation Alden H. Wright #  

E-Print Network (OSTI)

A Fixed Point Analysis of a Gene Pool GA with Mutation Alden H. Wright # Computer Science University of Montana USA wright@cs.umt.edu 44 121 414 2793 Jonathan E. Rowe Computer Science University Alden Wright was visiting the School of Computer Science, University of Birmingham, UK, supported

Wright, Alden H.

47

A Fixed Point Analysis of a Gene Pool GA with Mutation Alden H. Wright  

E-Print Network (OSTI)

A Fixed Point Analysis of a Gene Pool GA with Mutation Alden H. Wright Computer Science Department University of Montana, USA wright@cs.umt.edu Jonathan E. Rowe School of Computer Science The University is to move the population closer to This paper was written while Alden Wright was visiting the School

Poli, Riccardo

48

Undocumented Migration in the USA and Germany  

E-Print Network (OSTI)

Undocumented Migration in the USA and Germany: An AnalysisUndocumented Migration in the USA and Germany. An Analysismore restricted than in the USA. To my knowledge, there is

Stobbe, Holk

2000-01-01T23:59:59.000Z

49

Teaching-Assistantships in England/USA  

E-Print Network (OSTI)

Teaching-Assistantships in England/USA Anglistik University Atlanta/ U.S.A. (August 2014 ­ Mai 2015), Stipendium") oder in der Sprechstunde von Christoph Singer. #12;Studienplatz USA Anglistik

Noé, Reinhold

50

Scheuten Solar USA Inc | Open Energy Information  

Open Energy Info (EERE)

Scheuten Solar USA, Inc. Place: Rancho Santa Margarita, California Zip: 92688 Sector: Solar Product: Manufacturer of Solar PV systems References: Scheuten Solar USA, Inc.1 This...

51

AREA USA LLC | Open Energy Information  

Open Energy Info (EERE)

AREA USA LLC Jump to: navigation, search Name: AREA USA LLC Place: Washington, DC Zip: 20004 Sector: Services Product: Washington, D.C.-based division of Fabiani & Company...

52

Energy Pro USA | Open Energy Information  

Open Energy Info (EERE)

Pro USA Jump to: navigation, search Name: Energy Pro USA Place: Chesterfield, Missouri Zip: MO 63017 Product: Energy Pro funds and implements demand side energy savings programs to...

53

Windkraft Nord USA | Open Energy Information  

Open Energy Info (EERE)

Windkraft Nord USA Jump to: navigation, search Name: Windkraft Nord USA Place: San Diego, California Zip: 92122 Product: Subsidiary of WKN AG based in North America. References:...

54

Simulation Research Group, LBNL, USA  

NLE Websites -- All DOE Office Websites (Extended Search)

* T. Hong () Simulation Research Group, LBNL, USA e-mail: thong@lbl.gov Building Energy Benchmarking between the United States and China: Methods and Challenges Tianzhen Hong 1,* , Le Yang 2 , Jianjun Xia 2 , Wei Feng 1 1 Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA 2 Tsinghua University, Beijing 100084, China Abstract. Currently, buildings in the U.S. account for more than 40% of total primary energy. In China the

55

Scientific Committee Gina Ahlstrom, FHWA, USA  

E-Print Network (OSTI)

Scientific Committee Gina Ahlstrom, FHWA, USA Enrico Benetto, PRC Tudor, Luxembourg Youcef State University/ISCP, USA Laëtitia D'Aloïa, CERTU, France Hervé Di Benedetto, ENTPE, France Heather Dylla, National Asphalt Pavement Association, USA Jon Epps, Texas A&M, USA Adélaïde Feraille

California at Davis, University of

56

20-. , -USAS (UCREL semantic analysis system) 2.  

E-Print Network (OSTI)

. . - , - . , - , ( - ) - . 20- . , - , - ­ - USAS (UCREL semantic analysis system) 2. WordNet3, EuroWordNet4 USAS - Wmatrix http://www.comp.lancs.ac.uk/ucrel/wmatrix/. 3 Fellbaum C. (ed), Word. 73-89. 5 http://www.keenage.com #12;2 () . - USAS - . , , , c USAS

Rayson, Paul

57

University of Tennessee, USA Pacific Northwest National Laboratory,  

E-Print Network (OSTI)

#12; : University of Tennessee, USA Pacific Northwest National Laboratory, USA Georgia State University, USA University of Virginia, USA The Ohio State University, USA National Institute for Materials Science, Japan

Wang, Zhong L.

58

Sharp Electronics Corporation USA | Open Energy Information  

Open Energy Info (EERE)

USA USA Jump to: navigation, search Name Sharp Electronics Corporation (USA) Place Huntington Beach, California Zip 92647 Product North American division of Japanese electronics company References Sharp Electronics Corporation (USA)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Sharp Electronics Corporation (USA) is a company located in Huntington Beach, California . References ↑ "Sharp Electronics Corporation (USA)" Retrieved from "http://en.openei.org/w/index.php?title=Sharp_Electronics_Corporation_USA&oldid=350899" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version

59

Alternative Fuels Data Center: Clean Construction USA  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Construction USA Construction USA to someone by E-mail Share Alternative Fuels Data Center: Clean Construction USA on Facebook Tweet about Alternative Fuels Data Center: Clean Construction USA on Twitter Bookmark Alternative Fuels Data Center: Clean Construction USA on Google Bookmark Alternative Fuels Data Center: Clean Construction USA on Delicious Rank Alternative Fuels Data Center: Clean Construction USA on Digg Find More places to share Alternative Fuels Data Center: Clean Construction USA on AddThis.com... More in this section... Federal State Advanced Search All Laws & Incentives Sorted by Type Clean Construction USA Clean Construction USA is a voluntary program that promotes the reduction of diesel exhaust emissions from construction equipment and vehicles by encouraging proper operations and maintenance, use of emissions-reducing

60

Alternative Fuels Data Center: Clean Agriculture USA  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Clean Agriculture USA Clean Agriculture USA to someone by E-mail Share Alternative Fuels Data Center: Clean Agriculture USA on Facebook Tweet about Alternative Fuels Data Center: Clean Agriculture USA on Twitter Bookmark Alternative Fuels Data Center: Clean Agriculture USA on Google Bookmark Alternative Fuels Data Center: Clean Agriculture USA on Delicious Rank Alternative Fuels Data Center: Clean Agriculture USA on Digg Find More places to share Alternative Fuels Data Center: Clean Agriculture USA on AddThis.com... More in this section... Federal State Advanced Search All Laws & Incentives Sorted by Type Clean Agriculture USA Clean Agriculture USA is a voluntary program that promotes the reduction of diesel exhaust emissions from agricultural equipment and vehicles by encouraging proper operations and maintenance by farmers, ranchers, and

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Alternative Fuels Data Center: Clean Ports USA  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Ports USA to Ports USA to someone by E-mail Share Alternative Fuels Data Center: Clean Ports USA on Facebook Tweet about Alternative Fuels Data Center: Clean Ports USA on Twitter Bookmark Alternative Fuels Data Center: Clean Ports USA on Google Bookmark Alternative Fuels Data Center: Clean Ports USA on Delicious Rank Alternative Fuels Data Center: Clean Ports USA on Digg Find More places to share Alternative Fuels Data Center: Clean Ports USA on AddThis.com... More in this section... Federal State Advanced Search All Laws & Incentives Sorted by Type Clean Ports USA Clean Ports USA is an incentive-based program designed to reduce emissions by encouraging port authorities and terminal operators to retrofit and replace older diesel engines with new technologies and use cleaner fuels.

62

Climate Dynamics (1999) 15:619d629 Springer-Verlag 1999 W. T. Hyde ' T. J. Crowley ' L. Tarasov  

E-Print Network (OSTI)

. R. Peltier The Pangean ice age: studies with a coupled climate-ice sheet model Received: 30 June of Geography, University of Georgia, Athens, GA 30602-2502, USA W. R. Peltier Department of Physics, University!erent from that of the Pleistocene. We employ an ice sheet model (Tarasov and Peltier 1997b) that has

Peltier, W. Richard

63

The likelihood of homoploid hybrid C. ALEX BUERKLE* , ROBERT J. MORRIS, MARJORIE A. ASMUSSEN  

E-Print Network (OSTI)

The likelihood of homoploid hybrid speciation C. ALEX BUERKLE* , ROBERT J. MORRISà, MARJORIE A, Athens, GA 30602, U.S.A. New species may be formed through hybridization and without an increase in ploidy. The challenge is for hybrid derivatives to escape the homogenizing eects of gene ¯ow from

Rieseberg, Loren

64

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

NLE Websites -- All DOE Office Websites (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

65

De'Longhi USA, Inc.  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

De'Longhi USA, Inc. De'Longhi USA, Inc. (Dehumidifiers) BEFORE THE U.S. DEPARTMENT OF ENERGY Washington, D.C. 20585 ) 1 ) Case Number: 20 10-CE-2114 ) ) NOTICE OF PROPOSED CIVIL PENALTY Date issued: September 8,2010 Number of alleged violations: 13 Maximum possible assessment: $741,820 Proposed civil penalty: $94,900 The Office of the General Counsel of the U.S. Department of Energy (DOE) alleges that De'Longhi USA, Inc. (DeyLonghi) violated certain provisions of the Energy Policy and Conservation Act, 42 U.S.C. $ 6201 et seq., 10 C.F.R. Part 430, or both. Specifically, DOE alleges: 1. DeyLonghi manufactures or privately labels a variety of dehumidifiers, including, models DD40P, DD45, DD45P, DDSOP, DE400, DE400P, DE500, DESOOP, DE650P, DENSOOP, DG50, and DW30M.

66

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

67

Theory of weak localization in ferromagnetic (Ga,Mn)As  

E-Print Network (OSTI)

&M University, College Station, Texas 77843-4242, USA 3Institute of Physics, ASCR, v.v.i., Cukrovarnicka 10, 162 53 Praha 6, Czech Republic 4School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom #1;Received 27 November.... Unlike earlier theoretical work15,16 which ad- dressed quantum interference in ferromagnets, we focus our study on a four-band model which is directly relevant to the valence bands of #1;Ga,Mn#2;As. We demonstrate that the quan- tum interference...

Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

2009-01-01T23:59:59.000Z

68

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

69

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

70

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name: GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and...

71

Computerization and Competitiveness: National Information Infrastructure in the USA  

E-Print Network (OSTI)

stay 'fairly intense,' USA Today, August 1994. Clinton,INFRASTRUCTURE IN THE USA Kenneth L. Kraemer Professor ofINFRASTRUCTURE IN THE USA INTRODUCTION The production and

Kraemer, Kenneth L.

1994-01-01T23:59:59.000Z

72

Euro Chef USA: Order (2014-CE-23004)  

Energy.gov (U.S. Department of Energy (DOE))

DOE ordered Euro Chef USA Inc. to pay a $8,000 civil penalty after finding Euro Chef USA had failed to certify that certain models of cooking products comply with the applicable energy conservation standards.

73

Absolute Energy USA | Open Energy Information  

Open Energy Info (EERE)

USA Jump to: navigation, search Name: Absolute Energy (USA) Place: St. Ansgar, Iowa Zip: 50472 Product: Absolute Energy has built a 100 million gallon per year ethanol plant on the...

74

Hisense USA: Order (2010-CE-1211)  

Energy.gov (U.S. Department of Energy (DOE))

DOE issued an Order after entering into a Compromise Agreement with Hisense USA Corp. after finding Hisense USA had failed to certify that certain models of residential refrigerators, refrigerator-freezers, and freezers comply with the applicable energy conservation standards.

75

Orion Registrar, Inc., USA Certificate of Registration  

E-Print Network (OSTI)

Orion Registrar, Inc., USA Certificate of Registration D'fus Js lo cerl!fy !he Occupalional Golden, Colorado 80401 USA J fas been assessedby Orion !l?egislrar and}Oundlobe 1i2 compliance mi-456-6681 To authenticate this certificate please visit www.orion4value.com #12;Orion Registrar, Inc., USA Certificate

76

Beta decay of Ga-62  

E-Print Network (OSTI)

We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

77

Plenary Speakers Weng Cho Chew (Hongkong/USA)  

E-Print Network (OSTI)

Plenary Speakers Weng Cho Chew (Hongkong/USA) Vladimir G. Maz ya (UK/Sweden) Jean-Claude Nédélec (France) Wolfgang L. Wendland (Germany) Invited Speakers Thomas S. Angell (USA) Giles Auchmuty (USA) Constantin Bacuta (USA) Yassine Boubendir (USA) Alexey Chernov (Germany) David Colton (USA) Martin Costabel

Gilbert, Robert P.

78

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study  

SciTech Connect

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

2010-10-14T23:59:59.000Z

79

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

80

Novel GaAs Devices  

Science Journals Connector (OSTI)

As the dimensions of GaAs devices shrink, the effective electron velocity should increase, leading to a shorter transit time and to a ballistic or near-ballistic mode of operation (see Chapter 2). At the same ...

Michael Shur

1987-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1  

E-Print Network (OSTI)

, USA 2 NDP Optronics LLC, Mableton, Georgia 30126, USA 3 School of Electrical and Computer Engineering

Dietz, Nikolaus

82

DOE Analysis Related to H2USA  

Energy.gov (U.S. Department of Energy (DOE))

Presentation slides from the DOE Fuel Cell Technologies Office webinar, DOE Analysis Related to H2USA, held on July 24, 2013.

83

USA PATRIOT ACT and civil liberties.  

E-Print Network (OSTI)

??In the wake of terrorist attacks in New York and Washington on September 11, 2001, the United States government hurriedly passed the USA PATRIOT Act. (more)

Bergstrom, M. Ann.

2005-01-01T23:59:59.000Z

84

Synthesis and properties of green phosphor SrGa2S4:Eu2 emission displays by an environmentally clean technique  

E-Print Network (OSTI)

by an environmentally clean technique Y.D. Jianga , G. Villalobosa , J.C. Souriaua , H. Parisa , C.J. Summersa , Z.L. Wangb,* a Phosphor Technology Center of Excellence, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA b School of Materials Science and Engineering, Georgia

Wang, Zhong L.

85

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

86

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

87

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

88

High Efficiency Large Area AlGaAs/GaAs Concentrator Solar Cells  

Science Journals Connector (OSTI)

A 1-kWp ( peak at 100 mw/cm2 incident power dencity ) concentrating photovoltaic array with 180 square Presnel plastic lenses and AlGaAs/GaAs concentrator solar cells has been constructed. The AlGaAs/GaAs concetr...

S. Yoshida; K. Mitsui; T. Oda; Y. Yukimoto

1981-01-01T23:59:59.000Z

89

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response  

E-Print Network (OSTI)

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 27 infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

Jalali. Bahram

90

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

91

Worldwide Energy and Manufacturing USA Inc formerly Worldwide Manufacturing  

Open Energy Info (EERE)

Manufacturing USA Inc formerly Worldwide Manufacturing Manufacturing USA Inc formerly Worldwide Manufacturing USA Jump to: navigation, search Name Worldwide Energy and Manufacturing USA Inc (formerly Worldwide Manufacturing USA) Place San Bruno, California Zip 94066 Product Worldwide Manufacturing USA is an engineering company based in San Bruno, California. References Worldwide Energy and Manufacturing USA Inc (formerly Worldwide Manufacturing USA)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Worldwide Energy and Manufacturing USA Inc (formerly Worldwide Manufacturing USA) is a company located in San Bruno, California . References ↑ "Worldwide Energy and Manufacturing USA Inc (formerly Worldwide Manufacturing USA)"

92

Late Cretaceous chimaeroids (Chondrichthyes: Holocephali) from Alabama, USA  

E-Print Network (OSTI)

Holocephali) from Alabama, USA. Paleo- Bios 31(2). ucmp_Williston Basin, North Dakota, USA. Palaeontology 48:709Holocephali) from Alabama, USA DAVID J. CICIMURRI 1 * and

Cicimurri, David J.; Ebersole, Jun A.

2014-01-01T23:59:59.000Z

93

September 6th , 2008, Kimmel Center, New York, USA.  

E-Print Network (OSTI)

MFCA'08 September 6th , 2008, Kimmel Center, New York, USA. http of Utah, USA) Mathematical Foundations of Computational Anatomy Geometrical and Statistical Methods, University of Utah, USA) Program Committee Rachid Deriche (INRIA, France) Ian L. Dryden (University

Paris-Sud XI, Université de

94

Designing Sustainability at BMW Group: The Designworks/USA Experience  

E-Print Network (OSTI)

Table 1. The Designworks/USA creative process Element 1.will be disseminated to many of Designworks/USAs clients.acknowledge those Designworks/USA employees who provided

McElhaney, Kellie A; Toffel, Michael W.; Hill, Natalie

2002-01-01T23:59:59.000Z

95

GaAsbased quantum cascade lasers  

Science Journals Connector (OSTI)

...N. Murdin GaAs-based quantum cascade lasers Sirtori H. Page C. Becker...state-of-the-art of GaAs-based quantum cascade lasers. These new light sources...2000.0739 GaAs-based quantum cascade lasers By C. Sirtori, H. Page...

2001-01-01T23:59:59.000Z

96

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

97

USA Science and Engineering Festival: Inspiring and Educating...  

Energy Savers (EERE)

USA Science and Engineering Festival: Inspiring and Educating the Clean Energy Workforce of Tomorrow USA Science and Engineering Festival: Inspiring and Educating the Clean Energy...

98

MOU signed between CIAE and Jefferson National Lab, USA. (China...  

NLE Websites -- All DOE Office Websites (Extended Search)

https:www.jlab.orgnewsarticlesmou-signed-between-ciae-and-jefferson-national-lab-usa-china-nuclear-industry-news-ge... MOU signed between CIAE and Jefferson National Lab, USA....

99

Results from the investigations on leaking electricity in the USA  

E-Print Network (OSTI)

on leaking electricity in the USA Alan Meier, Wolfgang Huber120 million VCRs in the USA. Data were collected for 69

Meier, Alan; Huber, Wolfgang

1997-01-01T23:59:59.000Z

100

High Field Magnet R&D in the USA  

E-Print Network (OSTI)

Field Magnet R&D in the USA Stephen A. Gourlay Abstract··Laboratory, Berkeley, CA 94720 USA (telephone: 510-486-7156,

Gourlay, S.A.

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

High Field Magnet R&D in the USA  

E-Print Network (OSTI)

High Field Magnet R&D in the USA Stephen A. Gourlay magnetLaboratory, Berkeley, CA 94720 USA (telephone: 510-486-7156,

Gourlay, Stephen A.

2003-01-01T23:59:59.000Z

102

NEUTRAL BEAM INJECTOR RESEARCH AND DEVELOPMENT WORK IN THE USA  

E-Print Network (OSTI)

AND DEVELOPMENT WORK IN THE USA A* S R. V. Pyle, ' W. R.AND DEVELOPMENT WORK IN THE USA* -I- LBL ' R. V. Pyle, W. R.

Pyle, R.V.

2011-01-01T23:59:59.000Z

103

NATIONAL GEODATABASE OF TIDAL STREAM POWER RESOURCE IN USA  

SciTech Connect

A geodatabase of tidal constituents is developed to present the regional assessment of tidal stream power resource in the USA. Tidal currents are numerically modeled with the Regional Ocean Modeling System (ROMS) and calibrated with the available measurements of tidal current speeds and water level surfaces. The performance of the numerical model in predicting the tidal currents and water levels is assessed by an independent validation. The geodatabase is published on a public domain via a spatial database engine with interactive tools to select, query and download the data. Regions with the maximum average kinetic power density exceeding 500 W/m2 (corresponding to a current speed of ~1 m/s), total surface area larger than 0.5 km2 and depth greater than 5 m are defined as hotspots and documented. The regional assessment indicates that the state of Alaska (AK) has the largest number of locations with considerably high kinetic power density, followed by, Maine (ME), Washington (WA), Oregon (OR), California (CA), New Hampshire (NH), Massachusetts (MA), New York (NY), New Jersey (NJ), North and South Carolina (NC, SC), Georgia (GA), and Florida (FL).

Smith, Brennan T [ORNL; Neary, Vincent S [ORNL; Stewart, Kevin M [ORNL

2012-01-01T23:59:59.000Z

104

Coulomb excitation of 73Ga  

E-Print Network (OSTI)

The B(E2; Ii -> If) values for transitions in 71Ga and 73Ga were deduced from a Coulomb excitation experiment at the safe energy of 2.95 MeV/nucleon using post-accelerated beams of 71,73Ga at the REX-ISOLDE on-line isotope mass separator facility. The emitted gamma rays were detected by the MINIBALL-detector array and B(E2; Ii->If) values were obtained from the yields normalized to the known strength of the 2+ -> 0+ transition in the 120Sn target. The comparison of these new results with the data of less neutron-rich gallium isotopes shows a shift of the E2 collectivity towards lower excitation energy when adding neutrons beyond N = 40. This supports conclusions from previous studies of the gallium isotopes which indicated a structural change in this isotopical chain between N = 40 and N = 42. Combined with recent measurements from collinear laser spectroscopy showing a 1/2- spin and parity for the ground state, the extracted results revealed evidence for a 1/2-; 3/2- doublet near the ground state in 73 31Ga42 differing by at most 0.8 keV in energy.

J. Diriken; I. Stefanescu; D. Balabanski; N. Blasi; A. Blazhev; N. Bree; J. Cederkll; T. E. Cocolios; T. Davinson; J. Eberth; A. Ekstrm; D. V. Fedorov; V. N. Fedosseev; L. M. Fraile; S. Franchoo; G. Georgiev; K. Gladnishki; M. Huyse; O. V. Ivanov; V. S. Ivanov; J. Iwanicki; J. Jolie; T. Konstantinopoulos; Th. Krll; R. Krcken; U. Kster; A. Lagoyannis; G. Lo Bianco; P. Maierbeck; B. A. Marsh; P. Napiorkowski; N. Patronis; D. Pauwels; P. Reiter; M. Seliverstov; G. Sletten; J. Van de Walle; P. Van Duppen; D. Voulot; W. B. Walters; N. Warr; F. Wenander; K. Wrzosek

2010-10-13T23:59:59.000Z

105

NPP Grassland: Dickinson, U.S.A.  

NLE Websites -- All DOE Office Websites (Extended Search)

Dickinson, U.S.A., 1970 Dickinson, U.S.A., 1970 [PHOTOGRAPH] Photograph: Washing root samples at the Dickinson site (click on the photo to view a series of images from this site). Data Citation Cite this data set as follows: Whitman, W., and W. K. Lauenroth. 1998. NPP Grassland: Dickinson, U.S.A., 1970. Data set. Available on-line [http://www.daac.ornl.gov] from Oak Ridge National Laboratory Distributed Active Archive Center, Oak Ridge, Tennessee, U.S.A. Description Productivity of a northern mixed prairie grassland was monitored at the Dickinson study site during 1970. Dynamics of above-ground plant biomass were monitored at roughly 2-week intervals during the growing season. Data on above-ground live biomass, standing dead matter and litter are available, for two replications of a grazed and an "ungrazed" (relatively

106

H2USA | Department of Energy  

Energy Savers (EERE)

similar to the public-private partnerships in other countries focused on hydrogen, particularly Germany, Japan, and the UK. H2USA currently consists of more than 30 participants....

107

Charakterisierung und Prparation von GaN und Herstellung von In-Plane-Gate Transistoren in AlxGa1-xN/GaN Heterostrukturen.  

E-Print Network (OSTI)

??Gegenstand der Arbeit sind GaN-Volumenmaterial und AlxGa1-xN/GaN HEMTs (high electron mobility transistor), welche ein zweidimensionales Elektronengas (2DEG) besitzen. Die Materialien wurden durch elektrische Messungen, insbesondere (more)

Ebbers, Andr

2003-01-01T23:59:59.000Z

108

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

109

Capacitance hysteresis in GaN/AlGaN heterostructures L. E. Byrum,1  

E-Print Network (OSTI)

Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA 2 NDP Optronics

Matsik, Steven G.

110

Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys  

Science Journals Connector (OSTI)

Using large (512-atom) pseudopotential supercell calculations, we have investigated the composition dependence of the momentum matrix element Mv,c for transitions between the valence-band maximum and the conduction-band minimum of three semiconductor alloys:?GaP1-xNx and GaAs1-xNx, exhibiting large chemical and size differences between their alloyed elements, and GaP1-xAsx, which is a weakly perturbed alloy. In the composition ranges where these alloys have a direct band gap, we find that (i) in GaP1-xAsx, Mv,c is large (like the virtual-crystal value) and nearly composition independent; (ii) in GaAs1-xNx, Mv,c is strongly composition dependent: large for small x and small for large x; and (iii) in GaP1-xNx, Mv,c is only slightly composition dependent and is significantly reduced relative to the virtual-crystal value. The different behavior of GaP1-xAsx, GaP1-xNx, and GaAs1-xNx is traced to the existence/absence of impurity levels at the dilute alloy limits: (a) there are no gap-level impurity states at the x?1 or x?0 limits of GaP1-xAsx, (b) an isolated As impurity in GaN (GaN?:As) has a deep band gap impurity level but no deep impurity state is found for N in GaAs, and (c) GaN?:P exhibits a P-localized deep band-gap impurity state and GaP?:N has an N-localized resonant state. The existence of deep levels leads to wave-function localization in real space, thus to a spectral spread in momentum space and to a reduction of Mv,c. These impurity levels are facilitated by atomic relaxations, as evident by the fact that unrelaxed GaN?:As and GaN?:P, show no deep levels, have extended wave functions, and have large interband transition elements.

L. Bellaiche; Su-Huai Wei; Alex Zunger

1997-10-15T23:59:59.000Z

111

Alternative Fuels Data Center: Clean School Bus USA  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

School Bus USA School Bus USA to someone by E-mail Share Alternative Fuels Data Center: Clean School Bus USA on Facebook Tweet about Alternative Fuels Data Center: Clean School Bus USA on Twitter Bookmark Alternative Fuels Data Center: Clean School Bus USA on Google Bookmark Alternative Fuels Data Center: Clean School Bus USA on Delicious Rank Alternative Fuels Data Center: Clean School Bus USA on Digg Find More places to share Alternative Fuels Data Center: Clean School Bus USA on AddThis.com... More in this section... Federal State Advanced Search All Laws & Incentives Sorted by Type Clean School Bus USA Clean School Bus USA is a public-private partnership that focuses on reducing children's exposure to harmful diesel exhaust by limiting school bus idling, implementing pollution reduction technologies, improving route

112

Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors  

E-Print Network (OSTI)

, Georgia State University, Atlanta, Georgia 30303, USA; bNDP Optronics LLC, Mableton, Georgia 30126, USA; c

Dietz, Nikolaus

113

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

114

University of Georgia Honors Program CURO Honors Scholarship 203 Moore College 108 Herty Drive Athens, GA 30602 Telephone: (706) 542-3240 Email: honors@uga.edu Website: http://honors.uga.edu  

E-Print Network (OSTI)

American Asian / Asian American / Pacific Islander Black / African American Caucasian / White (non-Hispanic) Hispanic / Latino(a) Native American / American Indian Other (please specify): #12;University of Georgia? Father Mother Both Other Do you live in a single-parent home? Yes No Total number in household: Father

Arnold, Jonathan

115

OTB USA Inc | Open Energy Information  

Open Energy Info (EERE)

OTB USA Inc OTB USA Inc Jump to: navigation, search Name OTB USA Inc Address 1871 Suffolk Rd. Place Columbus, Ohio Zip 43221 Sector Solar Product Other:Capital Equipment Phone number 614-481-6701 Website http://www.otb-solar.com Coordinates 40.002562°, -83.0592999° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.002562,"lon":-83.0592999,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

116

Solar Systems USA | Open Energy Information  

Open Energy Info (EERE)

USA USA Jump to: navigation, search 200px Name Solar Systems USA Place Atlanta, Georgia Sector Renewable Energy Product Solar Panels Year founded 2010 Website http://solarsystemsusa.net Coordinates 33.7489954°, -84.3879824° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.7489954,"lon":-84.3879824,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

117

Coaltec Energy USA Inc | Open Energy Information  

Open Energy Info (EERE)

Coaltec Energy USA Inc Coaltec Energy USA Inc Jump to: navigation, search Name Coaltec Energy USA, Inc. Place Carterville, Illinois Zip 62918 Sector Biomass Product Coaltec Energy provides energy systems for businesses that have large quantities of waste, biomass, or other fuel source available. Coordinates 37.149025°, -94.433657° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.149025,"lon":-94.433657,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

118

Princeton Plasma Physics Lab - General Atomics (GA)  

NLE Websites -- All DOE Office Websites (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
119

ssp068 1040..1050  

NLE Websites -- All DOE Office Websites (Extended Search)

40-1050 40-1050 * September 2009 RESEARCH ARTICLE Two Poplar Glycosyltransferase Genes, PdGATL1.1 and PdGATL1.2, Are Functional Orthologs to PARVUS/AtGATL1 in Arabidopsis Yingzhen Kong a,b,2 , Gongke Zhou a,b,2,3 , Utku Avci a,b , Xiaogang Gu a , Chelsea Jones a , Yanbin Yin b,c , Ying Xu b,c and Michael G. Hahn a,b,1 a Complex Carbohydrate Research Center, The University of Georgia, 315 Riverbend Road, Athens, GA 30602, USA b BioEnergy Science Center, The University of Georgia, 315 Riverbend Road, Athens, GA 30602, USA c Computational System Biology Lab, Dept. of Biochemistry and Molecular Biology, and Institute of Bioinformatics, The University of Georgia, Athens, GA 30602, USA ABSTRACT Several genes in Arabidopsis, including PARVUS/AtGATL1, have been implicated in xylan synthesis. However, the biosynthesis of xylan in woody plants, where this polysaccharide is a major component

120

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

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121

Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy  

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

122

Ocean Thermal Energy Conversion Mostly about USA  

E-Print Network (OSTI)

Ocean Thermal Energy Conversion History Mostly about USA 1980's to 1990's and bias towards Vega or other energy carriers to be delivered to shore... 13luisvega@hawaii.edu #12;US Federal Government OTEC period estimated at 3 to 4 years. #12;luisvega@hawaii.edu 20 Energy Carriers · OTEC energy could

123

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network (OSTI)

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

124

Substance use by adolescents of the USA national longitudinal lesbian family study  

E-Print Network (OSTI)

use by adolescents of the USA national longitudinal lesbianuse by adolescents of the USA National Longitudinal LesbianUCLA School of Law, USA of Amsterdam, The Netherlands 3

Goldberg, Naomi G.; Bos, Henny M.W.; Gartrell, Nanette K.

2011-01-01T23:59:59.000Z

125

First report of the Asian seaweed Sargassum filicinum Harvey (Fucales) in California, USA  

E-Print Network (OSTI)

for cox3 sequences. Country USA Site Intake Pipes, SantaFucales) in California, USA Kathy Ann Miller 1 , John M.Berkeley, California, USA Marine Science Institute,

Miller, Kathy Ann; Engle, John M.; Uwai, Shinya; Kawai, Hiroshi

2007-01-01T23:59:59.000Z

126

Building a Balance: Housing Affordability and Environmental Protection in the USA  

E-Print Network (OSTI)

University, Ithaca, NY 14853, USA. TEL: 607-225-2145.and Environmental Protection in the USA Joseph LaquatraCornell University, USA and Gregory L. Potter Independent

Laquatra, Joseph; Potter, Gregory L.

2000-01-01T23:59:59.000Z

127

Levels of metals from salt marsh plants from Southern California, USA  

E-Print Network (OSTI)

in San Diego Bay (California, USA). Chemosphere, 63(5), 818-Diego Bay region, California, USA. Environmental Toxicologymarsh sediment in California, USA. Part 2: Occurrence and

Hoyt, Kimberly Ann

2009-01-01T23:59:59.000Z

128

Hindawi Publishing Corporation 410 Park Avenue,15th Floor,#287 pmb,New York,NY 10022,USA  

E-Print Network (OSTI)

Corporation 410 Park Avenue,15th Floor,#287 pmb,New York,NY 10022,USA http. Bona USA J. R. Cannon USA S.-N. Chow USA B. S. Dandapat India E. DiBenedetto USA R. Finn USA R. L. Fosdick USA J. Frehse Germany A. Friedman USA R. Grimshaw UK J. Malek Czech Republic J. T. Oden USA R

Shen, Xuemin "Sherman"

129

Krnvapennedrustning i USA och Sovjetunionen; Nuclear disarmament: USA and the Soviet Union.  

E-Print Network (OSTI)

?? AbstractIII-essay in political science by Christoffer Harnell, autumn -08. Supervisor: Malin Stegman-McCallion. Nuclear Disarmament - USA and the Soviet Union 1960-2002 This essay is (more)

Harnell, Christoffer

2009-01-01T23:59:59.000Z

130

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

131

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

132

Smeg USA: Order (2011-CE-14/1909)  

Energy.gov (U.S. Department of Energy (DOE))

DOE ordered Smeg USA, Inc. to pay a $6,000 civil penalty after finding Smeg USA had failed to certify that certain models of dishwashers and refrigerators comply with the applicable energy conservation standards.

133

DuraLamp USA: Order (2010-CE-0912)  

Energy.gov (U.S. Department of Energy (DOE))

DOE ordered DuraLamp USA, Inc. to pay a $2,500 civil penalty after finding DuraLamp USA had failed to certify that model PAR 30, an incandescent reflector lamp, complies with the applicable energy conservation standards.

134

AAG annual meeting April 9-13, 2013, LA, USA  

E-Print Network (OSTI)

AAG annual meeting April 9-13, 2013, LA, USA /26 Ethical Principles for the Geomatics Professional annual meeting April 9-13, 2013, LA, USA /26 Why ethical principles? 2 No Tipping #12;AAG annual meeting April 9-13, 2013, LA, USA /26 Why ethical principles? The growing access to digital Geospatial Data (GD

Wright, Dawn Jeannine

135

Payments for Ecosystems Services Findings and Perceptions from the USA  

E-Print Network (OSTI)

Payments for Ecosystems Services Findings and Perceptions from the USA Policy Summary Jenna Coull market mechanisms. The use of these schemes has become more widespread particularly in the USA and some and conservation protection in the USA, large mitigation banks have emerged which provide credits for an area

136

MAIL TO: FAX TO: PayFlex Systems USA, Inc.  

E-Print Network (OSTI)

MAIL TO: FAX TO: PayFlex Systems USA, Inc. Extend Health P.O. Box 3039 Omaha, NE 68103-3039 PayFlex Systems USA, Inc. Extend Health (402) 231-4310 (No Cover Page Required) Page 1 of ______________ Direct be your Social Security/Employer-Assigned Number) I hereby authorize PayFlex Systems USA, Inc. (Pay

Pennycook, Steve

137

PNE Wind USA Inc | Open Energy Information  

Open Energy Info (EERE)

Wind USA Inc Wind USA Inc Place Chicago, Illinois Zip 60601 Sector Wind energy Product Chicago-based subsidiary of wind farm project developer, PNE Wind. Coordinates 41.88415°, -87.632409° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.88415,"lon":-87.632409,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

138

Meridian Energy USA | Open Energy Information  

Open Energy Info (EERE)

Logo: Meridian Energy USA Name Meridian Energy USA Address 6200 Stoneridge Mall Road, Suite 300 Place Pleasanton, California Zip 94588 Sector Solar Product PV power developer Website http://meridianenergyusa.com/ Coordinates 37.696133°, -121.92419° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.696133,"lon":-121.92419,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

139

Gamesa Energy USA | Open Energy Information  

Open Energy Info (EERE)

Name Gamesa Energy USA Name Gamesa Energy USA Place Philadelphia, Pennsylvania Zip 19103 Sector Wind energy Product US subsidiary of Spanish wind project development and turbine manufacturing company Gamesa. Coordinates 39.95227°, -75.162369° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.95227,"lon":-75.162369,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

140

Solar Unlimited USA | Open Energy Information  

Open Energy Info (EERE)

Logo: Solar Unlimited USA Name Solar Unlimited USA Address 2353 Park Ave. Place Cedar City, Utah Zip 84721 Sector Solar Product Solar energy systems Year founded 1998 Phone number 435-867-9876 Website http://solarunlimited.net/ Coordinates 37.6944762°, -113.0937928° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.6944762,"lon":-113.0937928,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

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While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

EA-332 Nexen Marketing U.S.A. Inc. | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Nexen Marketing U.S.A. Inc. EA-332 Nexen Marketing U.S.A. Inc. Order authorizing Nexen Marketing U.S.A. Inc. to export electric energy to Canada EA-332 Nexen Marketing U.S.A. Inc....

142

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network (OSTI)

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

143

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

144

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

145

Energy Optimizers USA | Open Energy Information  

Open Energy Info (EERE)

Optimizers USA Optimizers USA Jump to: navigation, search Name Energy Optimizers USA Address 6 S. 3rd Street Place Tipp City, Ohio Zip 45371 Sector Biomass, Carbon, Geothermal energy, Services, Solar, Wind energy Product Business and legal services;Consulting;Energy audits/weatherization; Engineering/architectural/design;Installation;Investment/finances; Trainining and education Phone number 937-877-1919 Website http://www.energyoptimizersusa Coordinates 39.9610217°, -84.1712945° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.9610217,"lon":-84.1712945,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

146

Ohmic contacts to n-GaSb  

E-Print Network (OSTI)

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

147

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

148

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

149

Ormat Technologies Inc. North Brawley, California USA | Open Energy  

Open Energy Info (EERE)

Ormat Technologies Inc. North Brawley, California USA Ormat Technologies Inc. North Brawley, California USA Jump to: navigation, search OpenEI Reference LibraryAdd to library Web Site: Ormat Technologies Inc. North Brawley, California USA Authors Ormat Technologies and Inc. Published Publisher Not Provided, Date Not Provided DOI Not Provided Check for DOI availability: http://crossref.org Online Internet link for Ormat Technologies Inc. North Brawley, California USA Citation Ormat Technologies, Inc.. Ormat Technologies Inc. North Brawley, California USA [Internet]. [updated 2013;cited 2013]. Available from: http://www.ormat.com/case-studies/north-brawley-california-usa Retrieved from "http://en.openei.org/w/index.php?title=Ormat_Technologies_Inc._North_Brawley,_California_USA&oldid=682480" Categories:

150

FRV USA formerly Fotowatio Renewable Ventures LLC | Open Energy Information  

Open Energy Info (EERE)

FRV USA formerly Fotowatio Renewable Ventures LLC FRV USA formerly Fotowatio Renewable Ventures LLC Jump to: navigation, search Name FRV USA (formerly Fotowatio Renewable Ventures LLC) Place San Francisco, California Zip 94104 Sector Renewable Energy Product A wholly-owned subsidiary of FRV which manages and operates renewable energy assets in the US. References FRV USA (formerly Fotowatio Renewable Ventures LLC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. FRV USA (formerly Fotowatio Renewable Ventures LLC) is a company located in San Francisco, California . References ↑ "FRV USA (formerly Fotowatio Renewable Ventures LLC)" Retrieved from "http://en.openei.org/w/index.php?title=FRV_USA_formerly_Fotowatio_Renewable_Ventures_LLC&oldid=345517"

151

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

152

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction  

Science Journals Connector (OSTI)

We report a nondestructive large-area method to characterize dislocation formation at a highly lattice-mismatched interface. The analysis is based on x-ray diffraction and reciprocal space mapping using a standard lab-based diffractometer. We use this technique to identify and analyze a two-dimensional array of 90 misfit dislocations at a GaSb/GaAs interface. The full width at half maximum of the GaSb 004 reciprocal lattice point is shown to decrease with increasing GaSb epilayer thickness as expected from theoretical models. Based on these measurements the variation in the spatial dislocation frequency is calculated to be 1%.

Charles J. Reyner; Jin Wang; Kalyan Nunna; Andrew Lin; Baolai Liang; Mark S. Goorsky; D. L. Huffaker

2011-01-01T23:59:59.000Z

153

GaNInGaN LED efficiency reduction from parasitic electron currents in p-GaN  

Science Journals Connector (OSTI)

Abstract This paper presents observations of a previously unidentified source of performance limitation for GaNInGaN LED devices. While most studies focus on output saturation known as current droop from InGaN layer effects, we show an alike influence from p-type GaNs inherent background electron concentration. p-GaN material was investigated to confirm that, even though the material had an excess of holes, the background electrons were indeed present and were influencing the charge flow across device electrodes. This current does not cross LED heterojunctions but rather drifts toward its proximal device electrode, causing a source of heating while providing no carriers for light emitting recombination. The effects of this current were explored in an LED configuration, whose output showed weak efficiency at very low biases in addition to that from current droop. While the shortcoming under small currents has previously been attributed to electron tunneling across the junction, we propose that the background electrons inside p-GaN could be another explanation.

G. Togtema; V. Georgiev; D. Georgieva; R. Gergova; K.S.A. Butcher; D. Alexandrov

2015-01-01T23:59:59.000Z

154

Rodrigo BauelosRodrigo Bauelos, Purdue University, USA, Purdue University, USA Krzysztof BogdanKrzysztof Bogdan, Wroclaw University of Technology, Poland, Wroclaw University of Technology, Poland  

E-Print Network (OSTI)

Rodrigo BañuelosRodrigo Bañuelos, Purdue University, USA, Purdue University, USA Krzysztof BogdanZhen-Qing Chen, University of Washington, USA, University of Washington, USA HyeongIn ChoiHyeongIn Choi, Seoul, Japan, Ritsumeikan University, Japan Renming SongRenming Song, University of Illinois, USA, University

Kim, Panki

155

GaTe semiconductor for radiation detection  

DOE Patents (OSTI)

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

156

Microsoft Word - cwr117.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

© The Author 2011. Published by Oxford University Press. All rights reserved. © The Author 2011. Published by Oxford University Press. All rights reserved. For Permissions, please e-mail: journals.permissions@oup.com The ability of land plants to synthesize glucuronoxylans predates the evolution of tracheophytes. Ameya Kulkarni 2 , Maria J. Peña 2 , Utku Avci 2 , Koushik Mazumder 2 , Breeanna Urbanowicz 2 , Sivakumar Pattathil 2 , Yanbin Yin 3 , Malcolm A. O'Neill 2 , Alison W. Roberts 4 , Michael G. Hahn 2,5 , Ying Xu 3 , Alan G. Darvill 2,6 , and William S.York 1,2,6 2 Complex Carbohydrate Research Center and US Department of Energy Bioenergy Science Center, The University of Georgia, 315 Riverbend Road, Athens, GA 30602, USA, 3 Computational System Biology Laboratory, Department of Biochemistry and Molecular Biology and DOE Bioenergy Science Center, The University of Georgia, Athens, GA 30602,

157

Chemical profiles of switchgrass  

NLE Websites -- All DOE Office Websites (Extended Search)

profiles profiles of switchgrass Zhoujian Hu a,b , Robert Sykes a,c , Mark F. Davis a,c , E. Charles Brummer a,d , Arthur J. Ragauskas a,b,e, * a BioEnergy Science Center, USA b School of Chemistry and Biochemistry, Institute of Paper Science and Technology, Georgia Institute of Technology, Atlanta, GA 30332, USA c National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA d Institute for Plant Breeding, Genetics, and Genomics, Department of Crop and Soil Sciences, University of Georgia, Athens, GA 30602, USA e Forest Products and Chemical Engineering Department, Chemical and Biological Engineering, Chalmers University of Technology, SE-412 96 Göteborg, Sweden a r t i c l e i n f o Article history: Received 15 April 2009 Received in revised form 10 December 2009 Accepted 10 December 2009 Available online 13 January 2010 Keywords: Switchgrass Morphological components Chemical

158

Economics and Marketing of USA Universities  

Science Journals Connector (OSTI)

Abstract The global economic crisis is affecting not-for-profit performances: endowments are suffering, revenues and contributions are diminishing. At the same time donors are targeted by a pressing good-cause related marketing and the competition for resources is particularly keen. Not-for-profits like USA Universities are then confronted with different marketing tools: some of them are typical of for-profits and concern customers, their segmentation and their purchasing-power exploitation; some are, instead, typical of not-for-profits and aim to gain propensity and trustworthiness of donors. The economic and marketing literature counts several contributions about the implementation of marketing, fundraising, investing and other miscellaneous strategies whose final aim is the revenue maximization. From draft application to mature strategies, marketing is exploited by the cultural entrepreneur who copes with the eternal trade-off between cultural-artistic purposes and an efficient allocation of resources. As a matter of fact, inside of the organization the competition between marketing experts and fundraisers for the allocation of budget and resources is increasing. The paper's research goal is to investigate the revenue diversification in USA Universities, referring to 2012's data of IRS Forms with the highest 2012 revenues. The cluster analysis gives evidence that the highest gain is the result of the implementation of revenue diversification for hybrid profiles. The most crowded cluster is the Marketing Expert with the second highest gain. Focused on revenue-maximization, USA universities are surviving thanks to an efficient resource allocation in marketing, fundraising and other financing strategies.

Angela Besana; Annamaria Esposito

2014-01-01T23:59:59.000Z

159

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a  

E-Print Network (OSTI)

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a Anna Fontcuberta i Morral,b and Harry, Pasadena, California 91125 Daniel J. Aiken Emcore Photovoltaics, Albuquerque, New Mexico 87123 Mark W. Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 19 March 2006; accepted 26

Atwater, Harry

160

*Department of Neurological Surgery, Oregon Health & Science University, Portland, Oregon, USA Department of Molecular Biosciences, UC Davis School of Veterinary Medicine, Davis, California, USA  

E-Print Network (OSTI)

*Department of Neurological Surgery, Oregon Health & Science University, Portland, Oregon, USA Department of Molecular Biosciences, UC Davis School of Veterinary Medicine, Davis, California, USA à Davis, California, USA §Department of Anesthesiology and Perioperative Medicine, Oregon Health & Science

Hammock, Bruce D.

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

162

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

163

Hisense USA: Proposed Penalty (2010-CE-1211) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Hisense USA: Proposed Penalty (2010-CE-1211) Hisense USA: Proposed Penalty (2010-CE-1211) Hisense USA: Proposed Penalty (2010-CE-1211) September 8, 2010 DOE alleged in a Notice of Proposed Civil Penalty that Hisense USA Corp. failed to certify a variety of residential refrigerators, refrigerator-freezers, and freezers as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Hisense USA: Proposed Penalty (2010-CE-1211) More Documents & Publications Hisense USA: Order (2010-CE-1211)

164

Defect studies in low-temperature-grown GaAs  

SciTech Connect

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

165

Defect studies in low-temperature-grown GaAs  

SciTech Connect

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

166

LES' URENCO-USA Facility | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Enriched Uranium Agreement Between the USA and the Russian Federation has on the Domestic Uranium Mining, Conversion, and Enrichment Industries and the Ops of the Gaseous Diffusion...

167

Euro Chef USA: Proposed Penalty (2014-CE-23004)  

Energy.gov (U.S. Department of Energy (DOE))

DOE alleged in a Notice of Proposed Civil Penalty that Euro Chef USA Inc. failed to certify cooking products as compliant with the applicable energy conservation standards.

168

Webinar: DOE Analysis Related to H2USA  

Energy.gov (U.S. Department of Energy (DOE))

Video recording and text version of the webinar titled, DOE Analysis Related to H2USA, originally presented on July 24, 2013.

169

NEUTRAL BEAM INJECTOR RESEARCH AND DEVELOPMENT WORK IN THE USA  

E-Print Network (OSTI)

AND DEVELOPMENT WORK IN THE USA* R. V. Pylo, W. R. Baker, W.species 10 keV H beam us­ ing magnetic electron suppression

Pyle, R.V.

2011-01-01T23:59:59.000Z

170

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network (OSTI)

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

171

(1) Biology Department, Woods Hole Oceanographic Institution, Woods Hole, MA 02543 USA(1) Biology Department, Woods Hole Oceanographic Institution, Woods Hole, MA 02543 USA (2) Harvard Medical School, Boston, MA 02114 USA(2) Harvard Medical School, Boston  

E-Print Network (OSTI)

(1) Biology Department, Woods Hole Oceanographic Institution, Woods Hole, MA 02543 USA(1) Biology Department, Woods Hole Oceanographic Institution, Woods Hole, MA 02543 USA (2) Harvard Medical School, Boston, MA 02114 USA(2) Harvard Medical School, Boston, MA 02114 USA (3) Section on Auditory Mechanics, NIDCD

172

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

173

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

174

Norvento USA LLC | Open Energy Information  

Open Energy Info (EERE)

LLC LLC Jump to: navigation, search Name Norvento USA LLC Place Boston, Massachusetts Product Boston-based engineering consultancy and division of Norvento SA. Coordinates 42.358635°, -71.056699° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.358635,"lon":-71.056699,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

175

Low Efficiency Droop Green Nano-Pyramid {10 -11} InGaN/GaN Multiple Quantum Well LED  

Science Journals Connector (OSTI)

We report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {10 1} nano-pyramid facets. The device physics...

Cheng, Yuh-Jen; Chang, Shih-Pang; Lin, Da-Wei; Kuo, Hao-chung; Xiong, Kang-lin

176

InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting  

Science Journals Connector (OSTI)

Hydrogen generation through water splitting by n-InGaN working electrodes with bias generated from GaAs solar cell was studied. Instead of using an external bias provided by power...

Liu, Shu-Yen; Sheu, J K; Lin, Yu-Chuan; Chen, Yu-Tong; Tu, S J; Lee, M L; Lai, W C

2013-01-01T23:59:59.000Z

177

Reaktive Molekularstrahlepitaxie und Charakterisierung von GaN/(Al,Ga)N-Heterostrukturen auf SiC(0001).  

E-Print Network (OSTI)

??Thema dieser Arbeit ist die Synthese von hexagonalen GaN/(Al,Ga)N-Heterostrukturen mittels reaktiver Molekularstrahlepitaxie (MBE) auf SiC(0001)-Substraten. Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, optischen und (more)

Thamm, Andreas

2001-01-01T23:59:59.000Z

178

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

179

PANEL: HTML: POISON OR PANACEA? Moderator: Robert Glushko, Passage Systems (USA)  

E-Print Network (OSTI)

PANEL: HTML: POISON OR PANACEA? Moderator: Robert Glushko, Passage Systems (USA) Panel: Dale Dougherty, O'Reilly & Associates (USA) Eliot Kimber, Passage Systems (USA) Antoine Rizk, Euroclid (France) Daniel Russell, Apple Computer (USA) Kent Summers, Electronic Book Technologies (USA) Many people

Glushko, Robert J.

180

RECORD OF CATEGORICAL EXCLUSION DETERMINATION ENI USA GAS MARKETING LLC  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

ENI USA GAS MARKETING LLC ENI USA GAS MARKETING LLC FE DOCKET NO. lO·152-LNG PROPOSED ACTIONS: Eni USA Gas Marketing LlC (Eni USA), a Delaware limited liability company with its primary place of business in Houston, Texas, filed an application with the Office of Fossil Energy (FE) on November 30,2010, seeking authorization to export previously imported liquefied natural gas (LNG) from the Cameron LNG Terminal in Cameron Parish, louisiana to any country not prohibited by u.s. law or policy. The Application was submitted pursuant to section 3 of the Natural Gas Act and 10 CFR part 590 of the Department of Energy's (DOE) regulations. No new facilities or modification to any existing facilities at the Cameron LNG Terminal are required in order for Eni USA to export LNG from that faci

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While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Naturener USA LLC formerly Great Plains Wind Energy | Open Energy  

Open Energy Info (EERE)

LLC formerly Great Plains Wind Energy LLC formerly Great Plains Wind Energy Jump to: navigation, search Name Naturener USA, LLC (formerly Great Plains Wind & Energy) Place San Francisco, California Zip 94111 Sector Wind energy Product Developer of a wind farm in Montana, has been sold to Naturener S.A. References Naturener USA, LLC (formerly Great Plains Wind & Energy)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Naturener USA, LLC (formerly Great Plains Wind & Energy) is a company located in San Francisco, California . References ↑ "Naturener USA, LLC (formerly Great Plains Wind & Energy)" Retrieved from "http://en.openei.org/w/index.php?title=Naturener_USA_LLC_formerly_Great_Plains_Wind_Energy&oldid=3491

182

NPP Boreal Forest: Superior National Forest, U.S.A.  

NLE Websites -- All DOE Office Websites (Extended Search)

Superior National Forest, U.S.A., 1983-1984 Superior National Forest, U.S.A., 1983-1984 Data Citation Cite this data set as follows: Hall, F. G. 1997. NPP Boreal Forest: Superior National Forest, U.S.A., 1983-1984. Data set. Available on-line [http://www.daac.ornl.gov] from Oak Ridge National Laboratory Distributed Active Archive Center, Oak Ridge, Tennessee, U.S.A. Description Productivity of a boreal forest was determined at 31 spruce and 30 aspen forest stands in the Superior National Forest (SNF) near Ely, Minnesota, U.S.A., in 1983 and 1984 by the National Aeronautics and Space Administration. The purpose of the experiment was to investigate the ability of remote sensing to provide estimates of biophysical properties of ecosystems, such as leaf area index (LAI), biomass and net primary productivity (NPP). These ground-based estimates of above-ground biomass

183

Building Energy Software Tools Directory: EnergyGauge USA  

NLE Websites -- All DOE Office Websites (Extended Search)

EnergyGauge USA EnergyGauge USA EnergyGauge USA logo. User-friendly residential building energy simulation which allows calculation and rating of energy use of residential buildings around the United States. ENERGYGAUGE USA, takes advantage of current generation personal computers that perform an hourly annual computer simulation in less than half a minute. Includes Manual-J system sizing analysis, and an improvement analysis mode to analyze cost-effectiveness of energy upgrades. � ENERGYGAUGE USA uses DOE-2.1E with a number of enhancements which allow superior simulation of duct air leakage and heat transfer (thermal conditions of zones in which ducts are located strongly affects performance) as well as improved calculation of air conditioners, heat pump and furnaces performance. Slab, crawlspace and basement foundation types

184

USA Biomass Power Producers Alliance | Open Energy Information  

Open Energy Info (EERE)

Producers Alliance Producers Alliance Jump to: navigation, search Name USA Biomass Power Producers Alliance Place Sacramento, California Sector Biomass Product National trade association of biomass power producers in US. References USA Biomass Power Producers Alliance[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. USA Biomass Power Producers Alliance is a company located in Sacramento, California . References ↑ "USA Biomass Power Producers Alliance" Retrieved from "http://en.openei.org/w/index.php?title=USA_Biomass_Power_Producers_Alliance&oldid=352626" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages

185

Gatewaycompatible vectors for highthroughput gene functional analysis in switchgrass (Panicum virgatum L.) and other monocot species  

NLE Websites -- All DOE Office Websites (Extended Search)

Gateway-compatible Gateway-compatible vectors for high-throughput gene functional analysis in switchgrass (Panicum virgatum L.) and other monocot species David G.J. Mann 1,5,†* , Peter R. LaFayette 2,3,5 , Laura L. Abercrombie 1,5 , Zachary R. King 3,5 , Mitra Mazarei 1,5 , Mathew C. Halter 1 , Charleson R. Poovaiah 1,5 , Holly Baxter 1,5 , Hui Shen 4,5 , Richard A. Dixon 4,5 , Wayne A. Parrott 2,3,5 and C. Neal Stewart Jr 1,5 1 Department of Plant Sciences, The University of Tennessee, Knoxville, TN, USA 2 Department of Crop and Soil Sciences, The University of Georgia, Athens, GA, USA 3 Institute for Plant Breeding, Genetics & Genomics, The University of Georgia, Athens, GA, USA 4 Plant Biology Division, Samuel Roberts Noble Foundation, Ardmore, OK, USA 5 The BioEnergy Science Center, Oak Ridge National Laboratory, Oak Ridge, TN, USA Received 31 May 2011; revised 12 June 2011; accepted 10 August 2011.

186

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

187

Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells.  

E-Print Network (OSTI)

??Thema dieser Arbeit ist die Synthese von Wurtzit M-plane (In,Ga)N(1-100)-Heterostrukturen auf g-LiAlO2(100) mittels plasmauntersttzter Molekularstrahlepitaxie (MBE). Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, und (more)

Sun, Yue-Jun

2004-01-01T23:59:59.000Z

188

Development of Polarized Electron Source of GaAs-AlGaAs Superlattice and Strained GaAs  

Science Journals Connector (OSTI)

At Nagoya University, we have continued the development of GaAs polarized electron source (PES) for several years. Our test ... a gun producing (15) KeV polarized electrons and a standard 100 KeV Mott polarimete...

T. Nakanishi; S. Nakamura

1991-01-01T23:59:59.000Z

189

Conference program and abstracts. International Biogeography Society 6th Biennial Meeting 9-13 January 2013, Miami, Florida, USA  

E-Print Network (OSTI)

Washington, USA University of Oklahoma, USA Plant diversity1 and Thomas Perring 2 Department of Zoology, Oklahoma StateUniversity, Stillwater, Oklahoma, USA Department of

2012-01-01T23:59:59.000Z

190

New record of an extinct fish, Fisherichthys folmeri Weems (Osteichthyes), from the lower Eocene of Berkeley County, South Carolina, USA  

E-Print Network (OSTI)

Meridian, Mississippi, USA). Palaeontologia Electronica,Hot Truck Stop, Mississippi, USA. Palaeontology Harrington,Paleocene) of South Carolina, USA. Transactions of the

Cicimurri, David J.; Knight, James L.

2009-01-01T23:59:59.000Z

191

Taking ad-Vantage of lax advertising regulation in the USA and Canada: Reassuring and distracting health-concerned smokers  

E-Print Network (OSTI)

B. , & Wallace, J. (1980). Bwt USA Major Marketing Decisiontid/bnt81c00. Philip Morris USA (2005).Cigarettes: Philip Morris USA. Plummer, J.T. (1971). Life

Anderson, Stacey J; Pollay, Richard W; Ling, Pamela M

2006-01-01T23:59:59.000Z

192

Resource dispersion and consumer dominance: scavenging at wolf- and hunter-killed carcasses in Greater Yellowstone, USA  

E-Print Network (OSTI)

in Greater Yellowstone, USA Abstract The Greater Yellowstoneof California, Berkeley, CA, USA Yellowstone Center forYellowstone National Park, WY, USA Yellowstone Ecological

Wilmers, C C; Stahler, D R; Crabtree, R L; Smith, D W; Getz, Wayne M

2003-01-01T23:59:59.000Z

193

Perceived neighborhood environmental attributes associated with adults' transport-related walking and cycling: Findings from the USA, Australia and Belgium  

E-Print Network (OSTI)

and cycling: Findings from the USA, Australia and Belgium.and cycling: Findings from the USA, Australia and Belgiumgender. Methods: Data from the USA (Baltimore and Seattle),

2012-01-01T23:59:59.000Z

194

Impounded Marshes on Subsided Islands: Simulated Vertical Accretion, Processes, and Effects, Sacramento-San Joaquin Delta, CA USA  

E-Print Network (OSTI)

southern Great Plains, USA). Aquat Bot 74:97108. Atwaterof southwestern Florida. USA Mangroves Salt Marshes DeverelJoaquin Delta, California, USA. San Franc Estuary Watershed

Deverel, Steven J.; Ingrum, Timothy; Lucero, Christina; Drexler, Judith Z.

2014-01-01T23:59:59.000Z

195

Adolescents of the USA National Longitudinal Lesbian Family Study: Can Family Characteristics Counteract the Negative Effects of Stigmatization?  

E-Print Network (OSTI)

van Balen, F. (2008). The USA National Longitudinal LesbianH. , & Banks, A. (2006). The USA national lesbian familyPROCESS Adolescents of the USA National Longitudinal Lesbian

Gartrell, Nanette K.; Bos, Henny M.W.

2010-01-01T23:59:59.000Z

196

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures  

SciTech Connect

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap E{sub g} and the spin orbit splitting energy ?{sub so}, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which ?{sub so},> E{sub g} occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.

Hild, K.; Batool, Z.; Jin, S. R.; Hossain, N.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Hosea, T. JC. [1 Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK and also, Ibnu Sina Institute, Universiti Teknologi Malaysia, Johor Bahru, 81310 (Malaysia); Lu, X. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6, Canada and now VarianSemiconductor Equipment Associates, Gloucester, MA 01930 (United States); Tiedje, T. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6 (Canada)

2013-12-04T23:59:59.000Z

197

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

198

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

199

EA-332-A Nexen Marketing U.S.A. Inc. | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

-A Nexen Marketing U.S.A. Inc. EA-332-A Nexen Marketing U.S.A. Inc. Order authorizing Nexen Marketing U.S.A. Inc. to export electric energy to Canada EA-332-A Nexen Marketing...

200

An alkaline spring system within the Del Puerto ophiolite (California USA): A Mars analog site  

E-Print Network (OSTI)

Coast Range, California, USA. Geol. Soc. Amer. AbstractsPuerto Ophiolite (California USA): A Mars Analog Site J.G.Mountain View CA 94043 USA; (2) NASA/Ames Research Center,

Blank, J.G.

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Ng Chung-Sung Geophysical Institute, University of Alaska Fairbanks, Fairbanks, Alaska 99775, USA  

E-Print Network (OSTI)

99775, USA L. Lin, and A. Bhattacharjee Space Science Center University of New Hampshire USA Three and Center for Magnetic Self-Organization, University of New Hampshire, Durham, New Hampshire 03824, USA

Ng, Chung-Sang

202

Leidyosuchus (Crocodylia: Alligatoroidea) from the Upper Cretaceous Kaiparowits Formation (late Campanian) of Utah, USA  

E-Print Network (OSTI)

Formation, southern Utah, USA. Zoological Journal of theand vicinity, southern Utah, U.S.A. In A.L. Titus and M.A.late Campanian) of Utah, USA ANDREW A. FARKE, 1 * MADISON M.

Farke, Andrew A.; Henn, Madison M.; Woodward, Samuel J.; Xu, Heendong A.

2014-01-01T23:59:59.000Z

203

Contributors Marsha Berger, Courant Institute, New York University, New York, NY, USA  

E-Print Network (OSTI)

Contributors Marsha Berger, Courant Institute, New York University, New York, NY, USA Gyan Bhanot, Piscataway, NJ, USA Erik G. Boman, Discrete Algorithms and Mathematics Department, Sandia National Laboratories, Albuquerque, NM, USA Doruk Bozdag, Department of Biomedical Informatics, The Ohio State

Li, Xiaolin "Andy"

204

Historic, Recent, and Future Subsidence, Sacramento-San Joaquin Delta, California, USA  

E-Print Network (OSTI)

Joaquin Delta, California, USA. Wetlands 29:372386. HeimJoaquin Delta, California, USA. San Francisco Estuary andJoaquin Delta, California, USA Steven J. Deverel 1 and David

Deverel, Steven J; Leighton, David A

2010-01-01T23:59:59.000Z

205

Deputy Secretary Daniel Poneman USA Today Op-Ed September 13...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Deputy Secretary Daniel Poneman USA Today Op-Ed September 13, 2011 Deputy Secretary Daniel Poneman USA Today Op-Ed September 13, 2011 091411Poneman USA Today op-ed.pdf More...

206

Development and destruction of the first state funded anti-smoking campaign in the USA  

E-Print Network (OSTI)

anti-smoking campaign in the USA T H Tsoukalas, S A GlantzCalifornia CA 94143, USA; glantz@medicine.ucsf.edu Receivedwas the first state in the USA to implement a large state

Tsoukalas, T H; Glantz, Stanton A. Ph.D.

2003-01-01T23:59:59.000Z

207

Reliability of the animal detection system along US Hwy 191 in Yellowstone National Park, Montana, USA  

E-Print Network (OSTI)

Tallahassee, Florida, USA. Huijser, M.P. and P.T. McGowen.Carolina State University, USA. Also available from theUniversity, Bozeman, MT, USA. Katz, B.J. , G.K. Rousseau,

Huijser, Marcel P.; Camel, Whisper; Hardy, Amanda

2005-01-01T23:59:59.000Z

208

Multiband GaNAsP Quaternary Alloys  

SciTech Connect

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

209

Implantation of carbon in GaAs  

SciTech Connect

Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.

Moll, A.J.

1992-03-01T23:59:59.000Z

210

O?[]O? nuclear ?-decay of ?Ga  

E-Print Network (OSTI)

The branching ratio for the ?-Decay of ?Ga to the first excited O? state in ?Zn has been measured. It is possible to use this branching ratio to test the theoretical method of calculating the [] component of the charge correction term [], which...

Hyman, Bruce Carl

2012-06-07T23:59:59.000Z

211

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16 from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

212

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells  

SciTech Connect

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R. [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qubec (Canada)] [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qubec (Canada); Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K. [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)] [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Fafard, S. [Cyrium Technologies Inc., Ottawa, ON (Canada)] [Cyrium Technologies Inc., Ottawa, ON (Canada)

2013-09-27T23:59:59.000Z

213

nature biotechnology volume 29 number 2 FebruArY 2011 149 1Society of Fellows, Harvard University, Cambridge, Massachusetts, USA. 2Department of Genetics, Harvard Medical School, Boston, Massachusetts, USA. 3Wyss  

E-Print Network (OSTI)

, Cambridge, Massachusetts, USA. 2Department of Genetics, Harvard Medical School, Boston, Massachusetts, USA, USA. 4Program in Biological and Biomedical Sciences, Harvard Medical School, Boston, Massachusetts, USA. 5Department of Stem Cell and Regenerative Biology, Harvard University, Cambridge, Massachusetts

Church, George M.

214

U.S. Department of Energy Awards a Contract to USA Repository...  

Office of Environmental Management (EM)

to USA Repository Services for Management and Operating Contractor Support for the Yucca Mountain Project U.S. Department of Energy Awards a Contract to USA Repository...

215

2007-2009 USA Emission Solutions for Heavy-Duty Diesel Engines...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

-2009 USA Emission Solutions for Heavy-Duty Diesel Engines 2007-2009 USA Emission Solutions for Heavy-Duty Diesel Engines 2002 DEER Conference Presentation: Southwest Research...

216

After-hours Power Status of Office Equipment in the USA  

E-Print Network (OSTI)

of Office Equipment in the USA Carrie A. Webber*, Judy A.Road, Berkeley CA 94720, USA Received 13 April 2005 Abstract

Webber, Carrie A.; Roberson, Judy A.; McWhinney, Marla C.; Brown, Richard E.; Pinckard, Margaret J.; Busch, John F.

2005-01-01T23:59:59.000Z

217

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors  

SciTech Connect

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

2013-11-25T23:59:59.000Z

218

Infrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a  

E-Print Network (OSTI)

GaP single QW surrounded by AlGaInP waveguide WG and cladding layers, whereas the NIR laser incorporates a GaInfrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a Robert in GaAs-based broad-area laser diodes. Spectrally and spatially resolved scanning optical microscopy

Peinke, Joachim

219

The form, distribution and mobility of arsenic in soils contaminated by arsenic trioxide, at sites in southeast USA  

E-Print Network (OSTI)

trioxide, at sites in southeast USA Li Yang, and Rona J.industrial sites in southeastern USA are contaminated with

Yang, Li; Donahoe, Rona J.

2005-01-01T23:59:59.000Z

220

Hindawi Publishing Corporation 410 Park Avenue,15th Floor,#287 pmb,New York,NY 10022,USA  

E-Print Network (OSTI)

,NY 10022,USA http://www.hindawi.com/journals/denm/ Differential Equations & Nonlinear Mechanics Website.support@hindawi.com. Associate Editors N. Bellomo Italy J. L. Bona USA J. R. Cannon USA S.-N. Chow USA B. S. Dandapat India E. DiBenedetto USA R. Finn USA R. L. Fosdick USA J. Frehse Germany A. Friedman USA R. Grimshaw UK J. Malek Czech

Lim, Jong-Tae

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Surface Indicators of Geothermal Activity at Salt Wells, Nevada, USA,  

Open Energy Info (EERE)

Surface Indicators of Geothermal Activity at Salt Wells, Nevada, USA, Surface Indicators of Geothermal Activity at Salt Wells, Nevada, USA, Including Warm Ground, Borate Deposits, and Siliceous Alteration Jump to: navigation, search OpenEI Reference LibraryAdd to library Conference Paper: Surface Indicators of Geothermal Activity at Salt Wells, Nevada, USA, Including Warm Ground, Borate Deposits, and Siliceous Alteration Abstract Surface indicators of geothermal activity are often present above blind or concealed geothermal systems in the Great Basin, but their expressions are sometimes subtle. When mapped in detail, these indicators yield valuable information on the location, structural controls, and potential subsurface reservoir temperatures of geothermal fluids. An example is provided by the Salt Wells geothermal system in Churchill County, Nevada, USA, where

222

Secretary Steven Chu Editorial in USA Today | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Secretary Steven Chu Editorial in USA Today Secretary Steven Chu Editorial in USA Today Secretary Steven Chu Editorial in USA Today March 5, 2009 - 12:00am Addthis Washington, D.C. - This morning's edition of USA Today includes the following editorial from Energy Secretary Steven Chu highlighting President Obama's plans to develop and deploy new energy technologies that will put Americans to work, reduce our dependence on foreign oil and address the global climate crisis: Research pays for itself: Investments in clean energy will unleash innovations, create jobs By Steven Chu To lift our economy and put Americans back to work, President Obama is making a major investment in clean energy. Clean energy is the best opportunity we have to create jobs today and launch the industries of tomorrow. It's also critical for our security - to

223

NPP Grassland: Konza Prairie, U.S.A. [Kansas]  

NLE Websites -- All DOE Office Websites (Extended Search)

Konza Prairie, U.S.A., 1984-1990 Konza Prairie, U.S.A., 1984-1990 Data Citation Cite this data set as follows: Knapp, A. K., and D. Ojima. 1996. NPP Grassland: Konza Prairie, U.S.A., 1984-1990. Data set. Available on-line [http://www.daac.ornl.gov] from Oak Ridge National Laboratory Distributed Active Archive Center, Oak Ridge, Tennessee, U.S.A. Description Productivity of a humid temperate tall-grass prairie was determined at the Konza Prairie Natural Research Area from 1975 to the present. Monthly dynamics of above-ground plant biomass have been monitored since 1984, and estimates of above-ground plant production have been made since 1975. The Konza Prairie was the site of the First ISLSCP (International Satellite Land Surface Climatology Project) Field Experiment (FIFE), an intensive

224

NPP Grassland: Osage, U.S.A. [Oklahoma]  

NLE Websites -- All DOE Office Websites (Extended Search)

Osage, U.S.A., 1970-1972 Osage, U.S.A., 1970-1972 [PHOTOGRAPH] Photograph: Insect sampling trap at the Osage site (click on the photo to view a series of images from this site). Data Citation Cite this data set as follows: Risser, P. G. 1998. NPP Grassland: Osage, U.S.A., 1970-1972. Data set. Available on-line [http://www.daac.ornl.gov] from Oak Ridge National Laboratory Distributed Active Archive Center, Oak Ridge, Tennessee, U.S.A. Description Productivity of a tallgrass prairie grassland was monitored at the Osage study site from 1970 to 1972. Dynamics of above-ground plant biomass were monitored at roughly 2-week intervals during the growing season. Data on above-ground live biomass, standing dead matter and litter are available, for two replications of a grazed and an "ungrazed" (relatively undisturbed)

225

NPP Grassland: Jornada, U.S.A. [New Mexico]  

NLE Websites -- All DOE Office Websites (Extended Search)

Jornada, U.S.A., 1970-1972 Jornada, U.S.A., 1970-1972 [PHOTOGRAPH] Photograph: Jornada during the PROVE experiment, May 1997 (click on the photo to view a series of images from this site). Data Citation Cite this data set as follows: Pieper, R. D. 1998. NPP Grassland: Jornada, U.S.A., 1970-1972. Data set. Available on-line [http://www.daac.ornl.gov] from Oak Ridge National Laboratory Distributed Active Archive Center, Oak Ridge, Tennessee, U.S.A. Description Productivity of a desert grassland was monitored at the Jornada IBP study site from 1970 to 1972. Dynamics of above-ground plant biomass were monitored at roughly 2-week intervals during the growing season. Data on above ground live biomass, standing dead matter and litter are available, for two replications of a grazed and an "ungrazed" (relatively undisturbed)

226

USA Manufacturing: Proposed Penalty (2013-CE-5336) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Proposed Penalty (2013-CE-5336) Proposed Penalty (2013-CE-5336) USA Manufacturing: Proposed Penalty (2013-CE-5336) January 31, 2013 DOE alleged in a Notice of Proposed Civil Penalty that USA Manufacturing failed to certify walk-in cooler or freezer components as compliant with the energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. USA Manufacturing: Proposed Penalty (2013-CE-5336) More Documents & Publications USA Manufacturing: Order (2013-CE-5336) Amerikooler: Proposed Penalty (2013-CE-5307)

227

DOE Reaches Agreement with LG Electronics, USA, On Refrigerator Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Reaches Agreement with LG Electronics, USA, On Refrigerator Reaches Agreement with LG Electronics, USA, On Refrigerator Energy Matter DOE Reaches Agreement with LG Electronics, USA, On Refrigerator Energy Matter November 14, 2008 - 4:47pm Addthis ENERGY STAR® Program Continues to Help American Consumers Make Energy Efficient Choices WASHINGTON - The U.S. Department of Energy (DOE) today announced an agreement with LG Electronics, USA, Inc. (LG), resolving concerns related to energy usage measurements reported on LG French Door refrigerators with through-the-door ice and water service. The ENERGY STAR® program helps American consumers make energy efficient choices, saving billions of dollars while protecting the environment by using identified energy efficient products and practices. "DOE believes that the actions LG plans to take will benefit consumers and

228

Englische Titelbezeichnungen fr die Antragstellung Deutsch Englisch (USA) Englisch (GB)  

E-Print Network (OSTI)

Englische Titelbezeichnungen für die Antragstellung Deutsch Englisch (USA) Englisch (GB/Professor au?erplanmä?iger Professor (Privatdozent, Akademischer Rat) Adjunct Professor Adjunct Professor Deutsch Englisch

Rostock, Universität

229

Low-molecular-mass asphaltene compounds from Usa heavy oil  

Science Journals Connector (OSTI)

By the extraction, adsorption chromatography, it has been shown that asphaltene macromolecules from Usa crude oil contain compounds with a relatively low molecular mass represented by normal and branched alkan...

V. P. Sergun; E. Yu. Kovalenko; T. A. Sagachenko; R. S. Min

2014-03-01T23:59:59.000Z

230

Chevron U.S.A. Inc.- 14-119-LNG  

Energy.gov (U.S. Department of Energy (DOE))

The Office of Fossil Energy gives notice of receipt of an Application filed August 27, 2014 by Chevron U.S.A. Inc. (Chevron), requesting blanket authorization to export liquefied natural gas (LNG)...

231

De'Longhi USA: Order (2010-CE-2114)  

Energy.gov (U.S. Department of Energy (DOE))

DOE issued an Order after entering into a Compromise Agreement with De'Longhi USA, Inc. to resolve a case involving the failure to certify that a variety of dehumidifiers comply with the applicable energy conservation standards.

232

2012 USA Science & Engineering Festival | Princeton Plasma Physics...  

NLE Websites -- All DOE Office Websites (Extended Search)

USA Science & Engineering Festival View larger image IMG 0658 View larger image IMG 0659 View larger image IMG 0664 View larger image IMG 0667 View larger image IMG 0682 View...

233

Promega Corporation 2800 Woods Hollow Road Madison, WI 53711-5399 USA Toll Free in USA 800-356-9526 Telephone 608-274-4330 Fax 608-277-2516 www.promega.com Printed in USA. Part# TM231  

E-Print Network (OSTI)

Promega Corporation · 2800 Woods Hollow Road · Madison, WI 53711-5399 USA · Toll Free in USA 800. Technical Manual No. 231 #12;Page 2 Promega Corporation · 2800 Woods Hollow Road · Madison, WI 53711

Lebendiker, Mario

234

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

235

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network (OSTI)

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

236

Monolithic integration of GaAs and h~~~~Ga~.~Aslasers by molecular epitaxy on GaAs  

E-Print Network (OSTI)

where the thick cladding layer below the active laser region acts as a buffer layer to-yield comparable epitaxial regrowth of Ino.aGaesAs lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the -first time- to monolithically integrate these two lasers emitting near 1

237

Kohlenstoffhaltige ternre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternren Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner drften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

238

Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells  

SciTech Connect

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

2000-07-01T23:59:59.000Z

239

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

240

Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures  

SciTech Connect

The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)

Chel'nyi, A A; Aluev, A V; Maslov, S V [M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

2004-01-31T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

242

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

243

871 The Meteoritical Society, 2009. Printed in USA. Meteoritics & Planetary Science 44, Nr 6, 871878 (2009)  

E-Print Network (OSTI)

871 © The Meteoritical Society, 2009. Printed in USA. Meteoritics & Planetary Science 44, Nr 6, 871

Perfect, Ed

244

BlackHat Briefings USA 8.3.2011 Killing the Myth of  

E-Print Network (OSTI)

BlackHat Briefings USA 8.3.2011 #12;Killing the Myth of Cisco IOS Diversity Towards Large. Salvatore J. Stolfo | sal@cs.columbia.edu Jatin Kataria | jk3319@columbia.edu BlackHat Briefings USA 8 USA 8.3.2011 #12;Killing the Myth of Cisco IOS Diversity Motivation BlackHat Briefings USA 8

Yang, Junfeng

245

Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN  

Science Journals Connector (OSTI)

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN...

Yu, Chun-Ta; Lai, Wei-Chih; Yen, Cheng-Hsiung; Hsu, Hsu-Cheng; Chang, Shoou-Jinn

2014-01-01T23:59:59.000Z

246

In: Proceedings of the 1995 International environmental conference; 1995 May 7-10; Atlanta, GA. Atlanta, GA: TAPPI PRESS: 445-448; 1995.  

E-Print Network (OSTI)

. Atlanta, GA: TAPPI PRESS: 445-448; 1995. ENVIRONMENTALLY SOUND ALTERNATIVES FOR UPGRADING MIXED OFFICE

Abubakr, Said

247

Surface Science Analysis of GaAs Photocathodes Following Sustained...  

NLE Websites -- All DOE Office Websites (Extended Search)

Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, strained super-lattice GaAs photocathode samples, removed from the CEBAF...

248

P-type doping of GaN  

SciTech Connect

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Wong, R.K.

2000-04-10T23:59:59.000Z

249

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance  

Science Journals Connector (OSTI)

A contacted electroreflectance technique was used to investigate AlGaN/GaN heterostructures and their intrinsic electric field-induced properties. By studying variations in the electroreflectance with applied field spectral features associated with the AlGaN barrier the two-dimensional electron gas at the interface and bulk GaN were identified. Barrier-layer composition and electric field were determined from the AlGaN FranzKeldysh oscillations. For a high mobilityheterostructure grown on SiC measured AlGaN polarizationelectric field and two-dimensional electron gas density approached values predicted by a standard bandstructure model. The two-dimensional electron gas produced a broad field-tunable first derivative electroreflectance feature. With a dielectric function calculation we describe the line shape and relative amplitude of the two-dimensional electron gas electroreflectance feature for a wide range of electron density and applied field values.

S. R. Kurtz; A. A. Allerman; D. D. Koleske; A. G. Baca; R. D. Briggs

2004-01-01T23:59:59.000Z

250

Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m  

SciTech Connect

The spectral-kinetic properties of heterostructures with GaAs/GaAsSb-based and GaAsSb/InGaAs/GaAs-based quantum wells, emitting in the range of 1.0-1.2 {mu}m are studied with picosecond and nanosecond temporal resolution. Intense photoluminescence in the GaAsSb/InGaAs/GaAs structure, as well as an increase in the photoluminescence wavelength by a factor of 2.5 and a shift of the location of the maximum of the peak ({approx}100 meV) to the longer-wavelength region were observed up to room temperature. It is established that as the molar fraction of Sb and the thickness of the InGaAs layer increase, the energy of the fundamental transition decreases by a factor of 140 meV compared with the GaAsSb/InGaAs/GaAs structure with a lower Sb content and a smaller thickness of the InGaAs layer. At 300 K, the emission wavelength of such a structure was 1.18 {mu}m. In addition, an increase in the thickness of the InGaAs layer led to an increase in the room-temperature photoluminescence intensity by a factor of 60, which is associated with a decrease in the energy of the fundamental state for electrons in the InGaAs layer and, consequently, to larger electron localization and smaller temperature quenching of photoluminescence.

Morozov, S. V., E-mail: more@ipm.sci.-nnov.ru; Kryzhkov, D. I.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Vikhrova, O. I. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)] [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

2013-11-15T23:59:59.000Z

251

Vacancy-Induced 22 Reconstruction of the Ga(111) Surface of GaAs  

Science Journals Connector (OSTI)

Vacancy formation on the GaAs(111) surface is calculated to be strongly exothermic in character. The creation of one vacancy in each 22 cell allows the remaining Ga surface atoms to have a large inward relaxation, resulting in a 2.3-eV reduction in energy. It also transforms the polar (111) surface into a nonpolar (110)-like surface. The calculations provide strong support for the vacancy model of Tong et al., which is determined from analysis of low-energy-electron-diffraction data.

D. J. Chadi

1984-05-21T23:59:59.000Z

252

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Nel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

253

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots  

SciTech Connect

Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous laser irradiation. The time constants varied from tens of minutes to several hours, depending on the applied laser power. Based on the spectral evolution, it was concluded that the observed phenomenon should originate from laser induced structural damage and a sustained increase of non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay dynamics at different laser powers, it is argued that there should exist other processes that hinder PL degradation at a high laser power.

Zhang Hongyi; Chen Yonghai; Zhou Xiaolong; Jia Yanan; Ye Xiaoling; Xu Bo; Wang Zhanguo [Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2013-05-07T23:59:59.000Z

254

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

255

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

256

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

257

1CIE/USA-CNC/CIE 2013 CIE/USA-CNC/CIE Biennial Joint Meeting, Davis, CA, Nov. 7-8, 2013  

E-Print Network (OSTI)

1CIE/USA-CNC/CIE 2013 CIE/USA-CNC/CIE Biennial Joint Meeting, Davis, CA, Nov. 7-8, 2013 Yoshi Ohno Experiment on White Light Chromaticity for Lighting ­ Duv levels Perceived Most Natural ­ #12;2CIE/USA-CNC.3762001 for fluorescent lamps IEC 60081 for Fluorescent Lamps #12;3CIE/USA-CNC/CIE 2013 ANSI C78.377-2011 (for Solid State

California at Davis, University of

258

Immigration Law in New Zealand and the USA: A Comparison of Recent Changes in New Zealand's Immigration Law with Those Made in the USA  

E-Print Network (OSTI)

United Arab Emirates U.K. U.S.A. Uruguay Vanuatu VenezuelaThailand Turkey U.K. U.S.A. TOTAL Source: New ZealandD - AS OF 26TH J U L Y 1989 U.S.A. U.K. Fiji W. Samoa Tonga

Wearing, Brian

1990-01-01T23:59:59.000Z

259

Localized corrosion of GaAs surfaces and formation of porous GaAs  

SciTech Connect

The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

Schmuki, P.; Vitus, C.M.; Isaacs, H.S. [Brookhaven National Lab., Upton, NY (United States); Fraser, J.; Graham, M.J. [National Research Council of Canada, Ottawa, ON (Canada). Inst. for Microstructural Sciences

1995-12-01T23:59:59.000Z

260

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Hindawi Publishing Corporation 410 Park Avenue,15th Floor,#287 pmb,New York,NY 10022,USA  

E-Print Network (OSTI)

,15th Floor,#287 pmb,New York,NY 10022,USA http://www.hindawi.com/journals/denm/ Differential is not possible, you can contact denm.support@hindawi.com. Associate Editors N. Bellomo Italy J. L. Bona USA J. R. Cannon USA S.-N. Chow USA B. S. Dandapat India E. DiBenedetto USA R. Finn USA R. L. Fosdick USA J. Frehse

Plataniotis, Konstantinos N.

262

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; zgr, .; Morko, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

263

Preliminary Site Assessment Of The Redfield Campus, Reno, Nevada, Usa |  

Open Energy Info (EERE)

Site Assessment Of The Redfield Campus, Reno, Nevada, Usa Site Assessment Of The Redfield Campus, Reno, Nevada, Usa Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Conference Paper: Preliminary Site Assessment Of The Redfield Campus, Reno, Nevada, Usa Details Activities (1) Areas (1) Regions (0) Abstract: To develop a foundation to support future geothermal potential assessment on the Redfield campus property, this project compiled a GIS with the framework coming from existing geologic, hydrologic, and geoscience information. Along with the GIS, an InSAR deformation study was conducted from a suite of previously created interferograms from 1993-2005. Geochemical data were also re-evaluated in the context of fault controlled flow paths and the InSAR data results. Estimates of vertical and horizontal surface displacements associated with production of geothermal fluids were

264

Macquarie Funds Management USA Inc | Open Energy Information  

Open Energy Info (EERE)

Macquarie Funds Management USA Inc Macquarie Funds Management USA Inc Jump to: navigation, search Name Macquarie Funds Management (USA) Inc. Place Carlsbad, California Zip 92008 Product Fund of funds arm of Macquarie focused on taking limited partnership interests in clean-energy focused private equity firms Coordinates 31.60396°, -100.641609° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.60396,"lon":-100.641609,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

265

Geochemistry Of The Lake City Geothermal System, California, Usa | Open  

Open Energy Info (EERE)

Geochemistry Of The Lake City Geothermal System, California, Usa Geochemistry Of The Lake City Geothermal System, California, Usa Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Conference Paper: Geochemistry Of The Lake City Geothermal System, California, Usa Details Activities (2) Areas (1) Regions (0) Abstract: Lake City hot springs and geothermal wells chemically fall into a narrow compositional group. This indicates that, with the exception of a few hot springs, mixing with shallow cold ground waters does not have a significant influence on the chemistry of the hot springs. Narrow ranges in plots of F, B and Li versus Cl, and _D to _18O values indicate minimal mixing. Because of this, the compositions of the natural hot spring waters are fairly representative of the parent geothermal water. The average

266

Mitsubishi Electric and Electronics USA Inc | Open Energy Information  

Open Energy Info (EERE)

Electric and Electronics USA Inc Electric and Electronics USA Inc Jump to: navigation, search Name Mitsubishi Electric and Electronics USA Inc Place Cypress, California Zip 90630 Sector Solar Product Markets and supports consumer, commercial and industrial electronic products in US, including solar powered. Coordinates 29.975226°, -95.680206° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":29.975226,"lon":-95.680206,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

267

The development of integrated chemical microsensors in GaAs  

SciTech Connect

Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

1999-11-01T23:59:59.000Z

268

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network (OSTI)

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

269

The Essentials for GA Water Planning The Relationship  

E-Print Network (OSTI)

Water Plan and the Alabama-Florida-Georgia Water Sharing Dispute (The failure to agree on the two Management F. Conservation & Reuse a. Programs for Water Use Efficiency b. Consumptive Use & Return Flows GThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

270

Structure of a Si(100)22-Ga surface  

Science Journals Connector (OSTI)

The 22 structure formed on a Ga-adsorbed Si(100) surface is determined using tensor low-energy electron diffraction. I-V curves of the parallel dimer model are in excellent agreement with those of the experiment, indicating that the actual surface has parallel dimer structure. Specific displacements of the topmost two surface layers (the protrusion of the Ga dimer toward the vacuum, the increase of the bond length of the Ga dimer, the stretching of the Si dimer, and the movement of the Si dimer toward the Ga dimer) with the elongation of the Si dimer back bond are observed in the optimized geometry. The Ga-Si bond angle measured from the Si(100) surface plane is recovered with these displacements from that of the ideal geometry where each bond length is assumed to be the sum of Pauling covalent radii. Subsurface layers are also deformed to keep the bond lengths near their bulk values.

H. Sakama; K. Murakami; K. Nishikata; A. Kawazu

1994-11-15T23:59:59.000Z

271

Electronic structure of metallic antiperovskite compound GaCMn3  

Science Journals Connector (OSTI)

We have investigated the electronic structures of antiperovskite GaCMn3 and related Mn compounds SnCMn3, ZnCMn3, and ZnNMn3. In the paramagnetic state of GaCMn3, the Fermi surface nesting feature along the ?R direction is observed, which induces the antiferromagnetic (AFM) spin ordering with the nesting vector Q??R. Calculated susceptibilities confirm the nesting scenario for GaCMn3, and also explain various magnetic structures of other antiperovskite compounds. Through the band folding effect, the AFM phase of GaCMn3 is stabilized. Nearly equal densities of states at the Fermi level in the ferromagnetic and AFM phases of GaCMn3 indicate that two phases are competing in the ground state.

J. H. Shim; S. K. Kwon; B. I. Min

2002-07-10T23:59:59.000Z

272

Transatlantic Spread of the USA300 Clone of MRSA  

Science Journals Connector (OSTI)

To the Editor: The emergence of community-acquired methicillin-resistant Staphylococcus aureus (MRSA) is of great concern. USA300, the predominant epidemic clone in numerous outbreaks in closed communities in the United States, is also increasingly seen in Europe. International travel and the... To the Editor: The emergence of community-acquired methicillin-resistant Staphylococcus aureus (MRSA) is of great concern.1,2 USA300, the predominant epidemic clone in numerous outbreaks in closed communities in the United States,2 is also increasingly ...

2005-08-04T23:59:59.000Z

273

Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers  

Science Journals Connector (OSTI)

In0.135Ga0.865N/GaN pin solar cells are fabricated and investigated with three types of transparent current spreading layers (TCSLs): Ni/Au layer type (Ni/Au-L), Ni/Au grid type (Ni/Au-G), and ITO layer type (I...

X. M. Cai; Y. Wang; Z. D. Li; X. Q. Lv; J. Y. Zhang; L. Y. Ying

2013-05-01T23:59:59.000Z

274

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network (OSTI)

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

275

Surface roughening during depth profiling by Secondary Ion Mass Spectrometry (SIMS) in GaAlAs and GaAs  

Science Journals Connector (OSTI)

During bombardment of Ga1?xAlxAs and GaAs with oxygen we found an abrupt transition to higher sputter rates, change of the useful yield and significant increase of surface roughness at a well defined depth, which...

M. Gericke; T. Lill; M. Trapp; C. -E. Richter

276

GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization  

E-Print Network (OSTI)

radiation hardness than Si, GaAs, CdS and GaN, therefore it should be suitable for space applications. Last novel optoelectronic devices circumventing the problem of p-type doping of ZnO. In such Al devices become reality: the problem of p-type doping of ZnO. So far, there is no way to reliably produce

Wetzel, Christian M.

277

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network (OSTI)

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

278

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network (OSTI)

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm GaN-on-Si...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

279

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network (OSTI)

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

280

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network (OSTI)

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

282

Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics  

SciTech Connect

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

2002-10-01T23:59:59.000Z

283

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

284

Magnetic-field effects on quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells  

Science Journals Connector (OSTI)

We have used the variational procedure in the effective-mass and nondegenerate parabolic band approximations in order to investigate the effects of a magnetic field on the exciton effective mass and dispersion in semiconductor heterostructures. Calculations are performed for bulk GaAs, and two-dimensional and quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells for applied magnetic fields perpendicular to the layers. A simple hydrogenlike envelope wave function provides the expected behavior for the exciton dispersion in a wide range of the center-of-mass momenta, and an analytical expression for the exciton effective mass is obtained. Present results lead to a magnetic-field dependent exciton effective mass and dispersion in quite good agreement with available experimental measurements in coupled GaAs?(Ga,Al)As quantum wells.

E. Reyes-Gmez, L. E. Oliveira, and M. de Dios-Leyva

2005-01-14T23:59:59.000Z

285

Optoelectronic Interconnects XIII (OE112) Conference Chairs: Alexei L. Glebov, OptiGrate Corp. (USA); Ray T. Chen, The Univ.  

E-Print Network (OSTI)

Optoelectronic Interconnects XIII (OE112) Conference Chairs: Alexei L. Glebov, OptiGrate Corp. (USA); Ray T. Chen, The Univ. of Texas at Austin (USA) Program Committee: Bill Blubaugh, US Conec Ltd. (USA); Swapnajit Chakravarty, Omega Optics, Inc. (USA); John E. Cunningham, Oracle (USA); Allen M. Earman, Intersil

Jahns, Jürgen

286

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets  

SciTech Connect

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Castao, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

2013-11-14T23:59:59.000Z

287

HERA USA Inc formerly Ergenics Inc | Open Energy Information  

Open Energy Info (EERE)

HERA USA Inc formerly Ergenics Inc HERA USA Inc formerly Ergenics Inc Jump to: navigation, search Name HERA USA Inc (formerly Ergenics Inc) Place Ringwood, New Jersey Zip 7456 Sector Hydro, Hydrogen Product Ergenics is a USA based company with extensive experience in the development of products based on metal hydride materials. Its product capabilities include hydrogen storage units and solid state hydrogen compressors. Coordinates 36.380115°, -98.247919° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":36.380115,"lon":-98.247919,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

288

Sol-Up USA, LLC | Open Energy Information  

Open Energy Info (EERE)

Sol-Up USA, LLC Sol-Up USA, LLC Jump to: navigation, search Logo: Sol-Up USA, LLC Name Sol-Up USA, LLC Address 3355 West Spring Mountain Road, Suite 3 Place Las Vegas, NV Zip 89102 Sector Solar Product PV, Solar Thermal, Solar Cooling Year founded 2009 Number of employees 1-10 Phone number +1 (702) 586-9800 Website http://www.sol-up.com Coordinates 36.125853°, -115.184757° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":36.125853,"lon":-115.184757,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

289

Nitrogen use in switchgrass grown for bioenergy across the USA  

E-Print Network (OSTI)

Nitrogen use in switchgrass grown for bioenergy across the USA V.N. Owens a , D.R. Viands b , H Available online 17 August 2013 Keywords: Nitrogen removal Switchgrass Bioenergy Nitrogen use efficiency as a forage, conservation, and bioenergy crop [1e5]. It offers a number of distinct benefits including broad

Pawlowski, Wojtek

290

GREEN ENERGY AND ELECTRIC VEHICLES. BMW GROUP TECHNOLOGYOFFICE USA.  

E-Print Network (OSTI)

GREEN ENERGY AND ELECTRIC VEHICLES. BMW GROUP TECHNOLOGYOFFICE USA. LT-Z-Z, OCTOBER 2012 #12;GREEN E, LT-Z-Z,OCT 2012 Page 2 BACKGROUND. Markets for green energy and electric vehicles can accelerate each other. Nearly 40% of MINI E customers invested in residential solar. Adding Green-E options

California at Davis, University of

291

Long-term perspective on wildfires in the western USA  

Science Journals Connector (OSTI)

...forests; e.g., in Colorado (61) (Fig. 1A...pine forests in the Colorado Front Range . Ecol Appl 10...64 Marlon J ( 2009 ) Wildfire responses to abrupt climate change...occurrence, western Colorado (USA) Ecology 88 : 2891...2009 ) Climate and wildfire area burned in western U S...

Jennifer R. Marlon; Patrick J. Bartlein; Daniel G. Gavin; Colin J. Long; R. Scott Anderson; Christy E. Briles; Kendrick J. Brown; Daniele Colombaroli; Douglas J. Hallett; Mitchell J. Power; Elizabeth A. Scharf; Megan K. Walsh

2012-01-01T23:59:59.000Z

292

Seeing the Invisible Berkeley, CA 94720-1776, USA  

E-Print Network (OSTI)

Seeing the Invisible shabeh esearch ivision ley Berkeley, CA 94720-1776, USA tion of in- unity. We's personal computer has disappeared into invisibility." While in many ways inspiring, these concepts, when systems physi- cally invisible, but total invisibility, and the lack of feedback and control that implies

Heer, Jeffrey

293

Environmental Law, Clapper v. Amnesty International USA, and the Vagaries of Injury-in-Fact: "Certainly Impending" Harm, "Reasonable Concern," and "Geographic Nexus"  

E-Print Network (OSTI)

v. Amnesty International USA, and the Vagaries of Injury-in-v. Amnesty International USA further muddies the alreadyAmnesty International USA 6 and proposes some clarifications

Gallagher, Patrick

2014-01-01T23:59:59.000Z

294

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

295

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

296

Exciton recombination dynamics in InxGa1-xAs/GaAs quantum wells  

Science Journals Connector (OSTI)

Low-temperature decay times ?PL are reported for a series of InxGa1-xAs/GaAs quantum wells. These show a nearly linear increase with increasing thickness (4?Lz?10 nm, x=0.15) but recombination in the widest well (12 nm) is dominated by nonradiative effects. The decay time increases almost linearly with temperature up to 50 K, as expected for free excitons. An increase in ?PL with increasing In composition (0.05?x?0.25, Lz=8 nm) is also observed. Wells with different In compositions exhibit a similar temperature behavior and there is a weak influence of strain on the decay time. Additional peaks in the photoluminescence spectra occur to the low-energy side of the free-exciton peaks. These features, which exhibit longer decay times, are attributed to excitons localized in In-rich islands arising from indium segregation.

Haiping Yu; Christine Roberts; Ray Murray

1995-07-15T23:59:59.000Z

297

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

298

SEMI-ANNUAL REPORTS FOR GASFIN DEVELOPMENT USA, LLC - FE DKT...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GASFIN DEVELOPMENT USA, LLC - FE DKT. NO. 13-06-LNG - ORDER 3253 SEMI-ANNUAL REPORTS FOR GASFIN DEVELOPMENT USA, LLC - FE DKT. NO. 13-06-LNG - ORDER 3253 April 2013 October 2013...

299

Carib Energy (USA) LLC - FE DKT. NO. 11-71-LNG - 2993 | Department...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Carib Energy (USA) LLC - FE DKT. NO. 11-71-LNG - 2993 Carib Energy (USA) LLC - FE DKT. NO. 11-71-LNG - 2993 No reports available at this time. More Documents & Publications...

300

Eni USA Gas Marketing LLC- FE Dkt. No.- 15-13-LNG  

Energy.gov (U.S. Department of Energy (DOE))

The Office of Fossil Energy gives notice of receipt of an Application filed January 21, 2015 by Eni USA Gas Marketing LLC (ENI USA Gas Marketing), requesting blanket authorization to export...

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

E-Print Network 3.0 - aureus iowa usa Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

iowa usa Search Powered by Explorit Topic List Advanced Search Sample search results for: aureus iowa usa Page: << < 1 2 3 4 5 > >> 1 Role of Charge Properties of Bacterial...

302

E-Print Network 3.0 - angeles ca usa Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

ca usa Search Powered by Explorit Topic List Advanced Search Sample search results for: angeles ca usa Page: << < 1 2 3 4 5 > >> 1 Flavour Fragr. J. 2010, 25, 7174 Copyright 2009...

303

E-Print Network 3.0 - acad sci usa Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

acad sci usa Search Powered by Explorit Topic List Advanced Search Sample search results for: acad sci usa Page: << < 1 2 3 4 5 > >> 1 College of Liberal Arts & Sciences...

304

E-Print Network 3.0 - atlanta georgia usa Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

georgia usa Search Powered by Explorit Topic List Advanced Search Sample search results for: atlanta georgia usa Page: << < 1 2 3 4 5 > >> 1 (virulence) CAI-1 System Summary: OF...

305

Advanced Li-Ion Polymer Battery Cell Manufacturing Plant in USA...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Li-Ion Polymer Battery Cell Manufacturing Plant in USA Advanced Li-Ion Polymer Battery Cell Manufacturing Plant in USA 2012 DOE Hydrogen and Fuel Cells Program and Vehicle...

306

E-Print Network 3.0 - anaheim california usa Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

california usa Search Powered by Explorit Topic List Advanced Search Sample search results for: anaheim california usa Page: << < 1 2 3 4 5 > >> 1 June 4, 2008 California Parties...

307

Photovoltaic properties of GaAs:Be nanowire arrays  

SciTech Connect

Arrays of GaAs:Be nanowires are synthesized by molecular beam epitaxy on GaAs(111)B substrates. Prototypes of photovoltaic converters in which the grown nanowire arrays are used as active layers are produced by means of successive photolithography, etching, and metallization processes. Studying the photovoltaic properties of the fabricated structures using a solar radiation simulator demonstrates that the solarenergy conversion efficiency is about 0.1%. The value of the efficiency recalculated with the area occupied by the p-type nanowires on the surface of the n-type GaAs substrate taken into account amounts to 1.1%.

Bouravleuv, A. D.; Beznasyuk, D. V.; Gilstein, E. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Tchernycheva, M.; Luna Bugallo, A. De; Rigutti, L. [University Paris Sud 11, Institut d'Electronique Fondamentale UMR CNRS 8622 (France); Yu, L. [CNRS, Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique (France); Proskuryakov, Yu. [University of Liverpool, Stephenson Institute for Renewable Energy (United Kingdom); Shtrom, I. V.; Timofeeva, M. A. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Samsonenko, Yu. B.; Khrebtov, A. I.; Cirlin, G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-06-15T23:59:59.000Z

308

Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires  

SciTech Connect

Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

Kim, D. C.; Ahtapodov, L.; Boe, A. B.; Moses, A. F.; Dheeraj, D. L.; Fimland, B. O.; Weman, H. [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway); Choi, J. W.; Ji, H.; Kim, G. T. [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2011-12-23T23:59:59.000Z

309

Effects of Ga ion-beam irradiation on monolayer graphene  

SciTech Connect

The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.

Wang, Quan; Mao, Wei; Zhang, Yanmin; Shao, Ying; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)] [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China) [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-08-12T23:59:59.000Z

310

Predictors of Ips confusus Outbreaks During a Record Drought in Southwestern USA: Implications for Monitoring and Management  

E-Print Network (OSTI)

Drought in Southwestern USA: Implications for Monitoring andFlagstaff, AZ 86001-5694, USA M. J. Santos (&) Department ofDavis, CA 95616-8585, USA e-mail: mjsantos@ucdavis.edu T. G.

Santos, Maria J.; Whitham, Thomas G.

2010-01-01T23:59:59.000Z

311

NSF Workshop on Available Transfer Capability, Urbana IL, USA, June 1997 INITIAL CONCEPTS FOR APPLYING SENSITIVITY TO  

E-Print Network (OSTI)

NSF Workshop on Available Transfer Capability, Urbana IL, USA, June 1997 INITIAL CONCEPTS Engineering Dept. University of Wisconsin, Madison WI 53706 USA University of Illinois, Urbana IL 61801 USA 1

312

Changes in population attitudes about where smoking should not be allowed: California versus the rest of the USA  

E-Print Network (OSTI)

California versus the rest of the USA E A Gilpin, L Lee, J PLa Jolla, CA 92093-0645, USA; jppierce@ucsd.edu Received 30and in the rest of the USA. Venues queried were restaurants,

Gilpin, E A; Lee, L; Pierce, J P

2004-01-01T23:59:59.000Z

313

Subsidence Reversal in a Re-established Wetland in the Sacramento-San Joaquin Delta, California, USA  

E-Print Network (OSTI)

San Joaquin Delta, California, USA Robin L. Miller, U.S.estuary, California, USA. Journal of Coastal Research 20:accretion in a Mid-Atlantic (USA) tidal freshwater marsh.

Miller, Robin L.; Fram, Miranda; Fujii, Roger; Wheeler, Gail

2008-01-01T23:59:59.000Z

314

Experimental effects of black brant herbivory and fecal addition on the eelgrass animal community in Humboldt Bay, California, USA  

E-Print Network (OSTI)

HUMBOLDT BAY, CALIFORNIA, USA By Adam J. Frimodig A ThesisHUMBOLDT BAY, CALIFORNIA, USA By Adam J. Frimodig ApprovedHumboldt Bay, California, USA Adam J. Frimodig Seagrass beds

Frimodig, Adam J.

2007-01-01T23:59:59.000Z

315

Composition of modern sand from the Sierra Nevada, California, USA: Implications for actualistic petrofacies of continental-margin magmatic arcs  

E-Print Network (OSTI)

basin system, western U.S.A. : American Journal of Science,Sierra Nevada, California, USA: constraints on actualisticJoaquin Valley, California, U.S.A. : Journal of Sedimentary

Ingersoll, Raymond V.; Eastmond, Daniel J.

2007-01-01T23:59:59.000Z

316

Stable isotopes, Sr/Ca, and Mg/Ca in biogenic carbonates from Petaluma Marsh, northern California, USA  

E-Print Network (OSTI)

Science Ltd Printed in the USA. All rights reserved PIIMarsh, northern California, USA B. L. I NGRAM ,* ,1 P. D E DBerkeley, California 94720, USA Department of Geology, The

Ingram, B.L.; De Deckker, P.; Chivas, A.R.; Conrad, M.E.; Byrne, A.R.

2004-01-01T23:59:59.000Z

317

Participants (Nonlinear Waves in Fluids, 12-14 September 2012, Loughborough, UK) Mark Ablowitz (University of Colorado, USA) ,  

E-Print Network (OSTI)

(University of Colorado, USA) , Triantaphyllos R. Akylas (Massachusetts Institute of Technology, USA) , Azwani Alias (Loughborough University, UK) , Sergei and University of Twente, The Netherlands) , John Boyd (University of Michigan, USA

Khusnutdinova, Karima

318

Evaluation of measures to minimize wildlife-vehicle collisions and maintain wildlife permeability across highways in Arizona, USA  

E-Print Network (OSTI)

ACROSS HIGHWAYS IN ARIZONA, USA Norris L. Dodd (Phone: 928-Box 2326, Pinetop, AZ 85935, USA Jeffrey W. Gagnon (Phone:Road, Phoenix, AZ 85023, USA Ray E. Schweinsburg (Phone:

Dodd, Norris L.; Gagnon, Jeffrey W.; Schweinsburg, Ray E.

2003-01-01T23:59:59.000Z

319

Presence of Alexandrium catenella and paralytic shellfish toxins in finfish, shellfish and rock crabs in Monterey Bay, California, USA  

E-Print Network (OSTI)

St. , Santa Cruz, CA 95064, USA e-mail: rjester@edison.edu;Blvd. East, Seattle, WA 98112, USA Mar Biol (2009) 156:493in squid from Monterey Bay, CA (USA). Harmful Algae 7:4551.

Jester, Rozalind J.; Baugh, Keri A.; Lefebvre, Kathi A.

2009-01-01T23:59:59.000Z

320

Demography, movement patterns, and mating system of leopard sharks (Triakis semifasciata) aggregating along the open coast of southern California, USA  

E-Print Network (OSTI)

Canyon, La Jolla, California, USA. Oral paper presented atMinneapolis, MN, USA. *Samuel H. Gruber Award for BestCanyon, La Jolla, California, USA. Oral paper presented at

Nosal, Andrew Phillip

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Conference program and abstracts. International Biogeography Society 6th Biennial Meeting 9-13 January 2013, Miami, Florida, USA  

E-Print Network (OSTI)

2013, Miami, Florida, USA (ed. by J. Hortal, K. Faller, K.13 january 2013, Miami, Florida, USA Conference Program andJanuary 2013, Miami, Florida, USA Published in December 2012

2012-01-01T23:59:59.000Z

322

Associations of neighborhood characteristics with active park use: an observational study in two cities in the USA and Belgium  

E-Print Network (OSTI)

Street, Phoenix, AZ 85004, USA. Received: 20 February 2013study in two cities in the USA and Belgium. Internationalstudy in two cities in the USA and Belgium Delfien Van Dyck

2013-01-01T23:59:59.000Z

323

Athens, Wisconsin: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

5.0330224°, -90.0740226° 5.0330224°, -90.0740226° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":45.0330224,"lon":-90.0740226,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

324

Athens, Greece: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Greece: Energy Resources Greece: Energy Resources Jump to: navigation, search Equivalent URI DBpedia GeoNames ID 264371 Coordinates 37.97918°, 23.716647° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.97918,"lon":23.716647,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

325

Barriers to Recycling in Athens, Ohio.  

E-Print Network (OSTI)

?? The Resource Conservation and Recovery Act of 1976 emerged during a time period when environmental legislation expanded its scope in the United States. Waste (more)

McCosker, Loraine A.

2006-01-01T23:59:59.000Z

326

Athens, Ohio: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Architects Panich, Noel + Associates Redhawk Energy Systems SunPower Sunpower, Inc Third Sun Solar and Wind Power References US Census Bureau Incorporated place and minor civil...

327

Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs  

Science Journals Connector (OSTI)

Electrolyte electroreflectance (EER) experiments were performed on In 0.22 Ga 0.78 As/GaAs single quantum wells grown by the conventional molecular-beam-epitaxy (MBE) shutter operation and also by modified MBE shutter operation intended to form more compositionally abrupt normal and inverted interfaces. The latter included controlled thermal desorption of the surface segregated In at the InGaAs layer surface (flash off) and the deposition of In at the InGaAs/GaAs interface to eliminate compositional broadening (predeposition). The fundamental energy gap and subband transitions were determined experimentally and compared with an accurate calculation of the potential well problem including strain. These results confirmed the segregation of In atoms near the interface. The segregation was maximum in the conventional (normal) MBE sample and least with the modified growth incorporating predeposition and flash off as expected. The segregated atoms are observed to act as dopants and form junctions near the InGaAs/GaAs interface. This study shows that EER can be used as an effective tool for studying the segregation process in MBE growth.

K. Chattopadhyay; J. Aubel; S. Sundaram; J. E. Ehret; R. Kaspi; Keith R. Evans

1997-01-01T23:59:59.000Z

328

National Fuel Cell and Hydrogen Energy Overview: Total Energy USA 2012  

Energy.gov (U.S. Department of Energy (DOE))

Presentation by Sunita Satyapal at the Total Energy USA 2012 meeting in Houston, Texas, on November 27, 2012.

329

1861 The Meteoritical Society, 2008. Printed in USA. Meteoritics & Planetary Science 43, Nr 11, 18611877 (2008)  

E-Print Network (OSTI)

of Chicago, 5640 S. Ellis Ave., Chicago, Illinois 60637, USA 6Glenn T. Seaborg Institute, Lawrence Livermore

Grossman, Lawrence

330

The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency  

Science Journals Connector (OSTI)

This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) ... quantum dot effectively enhance the overall power conversion efficiency

Chen-Chen Chung; Binh Tinh Tran; Hau-Vei Han; Yen-Teng Ho

2014-03-01T23:59:59.000Z

331

Improvement of orange ii photobleaching by moderate Ga3+ doping of titania and detrimental effect of structural disorder on Ga overloading  

Science Journals Connector (OSTI)

Highly photoactive Ga3+-doped anatase modification of titania was prepared by homogeneous hydrolysis of aqueous solutions mixture of titanium oxo-sulphate TiOSO4 and gallium(III) nitrate with urea. Incorporation of Ga3+ ...

Vclav tengl, Jil Henych, Michaela Slun, Tom Matys Grygar, Jana Velick, Martin Kormunda

2014-01-01T23:59:59.000Z

332

Kinetics of indirect photoluminescence in GaAs/AlxGa1?x As double quantum wells in a random potential with a large amplitude  

Science Journals Connector (OSTI)

The kinetics of indirect photoluminescence of GaAs/AlxGa1?x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is ...

L. V. Butov; A. V. Mintsev; A. I. Filin

1999-05-01T23:59:59.000Z

333

ORIGINAL PAPER Arctic fisheries catches in Russia, USA, and Canada: baselines  

E-Print Network (OSTI)

ORIGINAL PAPER Arctic fisheries catches in Russia, USA, and Canada: baselines for neglected northern Siberia (Russia), Arctic Alaska (USA), and the Canadian Arctic, extends over seven coastal Large.e., 770,000, 89,000, and 94,000 t by Russia, USA, and Canada, respectively for the same time period

Pauly, Daniel

334

1 REVIEW OF PRC-USA COOPERATIVE RESEARCH IN SOIL DYNAMICS  

E-Print Network (OSTI)

1 REVIEW OF PRC-USA COOPERATIVE RESEARCH IN SOIL DYNAMICS In 1980's, sponsored by the State Seismological Bureau of China and the National Science Foundation of the Unite States, the PRC-USA cooperative., and another from the University of California, Davis of USA, including Profs. K. Arulanandan, C.K. Shen, Y

Spencer Jr., B.F.

335

A National Assessment of Stressors to Estuarine Fish Habitats in the Contiguous USA  

E-Print Network (OSTI)

A National Assessment of Stressors to Estuarine Fish Habitats in the Contiguous USA Correigh M /Revised: 3 June 2014 /Accepted: 27 June 2014 # Coastal and Estuarine Research Federation (outside the USA a composite stressor index for 196 estuaries throughout the con- tiguous USA. Investigation of indicator

336

International Conference on Ion Sources (ICIS'09) September 20-25, 2009, Gatlinburg, TN, USA  

E-Print Network (OSTI)

13th International Conference on Ion Sources (ICIS'09) September 20-25, 2009, Gatlinburg, TN, USA Directorate, ORNL New Frontiers in Neutron Sciences Ian Anderson, ORNL, USA Summary of Current and Future Developments Highlighted at the ECRIS08 R. C. Vondrasek, ANL, USA Introduction of the Conference Sponsors R

Pennycook, Steve

337

Relation of Flat Subduction to Magmatism and Deformation in the Western USA  

E-Print Network (OSTI)

Relation of Flat Subduction to Magmatism and Deformation in the Western USA Eugene Humphreys Department of Geological Sciences, University of Oregon, Eugene, Oregon, USA ABSTRACT Flat subduction of the Farallon plate beneath western USA during the Laramide orogeny was caused by the combined effects

Humphreys, Eugene

338

Rooting for Trees: Volunteers to Plant 20 Trees, Mark Tree Campus USA Honor  

E-Print Network (OSTI)

Rooting for Trees: Volunteers to Plant 20 Trees, Mark Tree Campus USA Honor March 22, 2013 Event as a Tree Campus USA, a title granted by the Arbor Day Foundation. This year, the foundation designated the university as a Tree Campus USA for the fifth consecutive year. The event is sponsored by the Campus

Hofmann, Hans A.

339

2008 European PV Conference, Valencia, Spain COMPARISON OF SOLAR RADIATION FORECASTS FOR THE USA  

E-Print Network (OSTI)

2008 European PV Conference, Valencia, Spain COMPARISON OF SOLAR RADIATION FORECASTS FOR THE USA J, The University at Albany, 251 Fuller Rd, Albany, NY 12203, USA 3 University of Oldenburg, Institute of Physics for a half year period (summer 2007) at three different climates in the USA. ECMWF shows the best results

Perez, Richard R.

340

Evolving Strategies for Asia USA Containerized Supply Chains: Implications and Policy Recommendations  

E-Print Network (OSTI)

1 Evolving Strategies for Asia ­ USA Containerized Supply Chains: Implications and Policy of California at Berkeley Berkeley, CA 947201777 Abstract The nature and sophistication of Asia ­ USA nationwide importers accounted for about 30% of total Asia­USA imports in 2003, 40% in 2007, and probably 50

Kammen, Daniel M.

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

8501 La Salle Road Baltimore, MD 21284 USA SYRACUSE UNIVERSITY PARTICIPANTS  

E-Print Network (OSTI)

8501 La Salle Road Baltimore, MD 21284 USA SYRACUSE UNIVERSITY PARTICIPANTS ENGAGED IN INTERNATIONAL STUDIES SPONSOR TODAY'S DATE Syracuse University Month Day Year Date of Arrival in U.S.A. From Month Day Year * Valid for 1 year from enrollment date ENROLLMENT INFORMATION Last Name First Name USA

Kovalev, Leonid

342

Effects of postfire seeding and fertilizing on hillslope erosion in north-central Washington, USA  

E-Print Network (OSTI)

Effects of postfire seeding and fertilizing on hillslope erosion in north-central Washington, USA P, Rocky Mountain Research Station, 1221 South Main Street, Moscow, ID 83843, USA b U.S. Department of Agriculture, Forest Service, Okanogan-Wenatchee National Forest, 215 Melody Lane, Wenatchee, WA 98801, USA

Flury, Markus

343

Current Directions of Structural Health Monitoring and Control in USA Satish Nagarajaiah1,  

E-Print Network (OSTI)

Current Directions of Structural Health Monitoring and Control in USA Satish Nagarajaiah1,§, 1 Prof.,Dept. of Civil & Env./Dept of Mech. Eng. & Mat. Sc., Rice Univ., Houston, TX 77005, U.S.A. 2 Prof.,Dept. of Mech. Aero. and Struc. Eng., Washington Univ., St. Louis, MO 63130, U.S.A. 3 Asst. Prof

Lynch, Jerome P.

344

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

345

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

346

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy  

Science Journals Connector (OSTI)

Time-resolved photoluminescence(TRPL) and positron annihilation measurements as well as Al0.23Ga0.77N/GaN heterostructuregrowth by metalorganic vapor phase epitaxy were carried out on very low defect density polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence(PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L +); i.e. decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L + being 116?nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100?K and levels off at approximately 1.1?ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al0.23Ga0.77N/GaN/Al0.18Ga0.82N/GaN heterostructure are improved by the use of FS-GaN substrates in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Al0.23Ga0.77N/GaN single heterostructuregrown on the c-plane FS-GaN substrate.

S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono

2012-01-01T23:59:59.000Z

347

Polarization charges and polarization-induced barriers in AlxGa1xNGaN and InyGa1yNGaN heterostructures  

E-Print Network (OSTI)

N?GaN heterostructures L. Jia,a) E. T. Yu, D. Keogh, and P. M. Asbeck Department of Electrical and Computer EngineeringGa1 yN surrounded by n-GaN, capacitance­ voltage profiling studies combined with elementary will most likely require further improvements in p-type GaN conduc- tivity and fabrication of low-resistance

Yu, Edward T.

348

bio  

NLE Websites -- All DOE Office Websites (Extended Search)

Original Papers Original Papers An integrated toolkit for accurate prediction and analysis of cis regulatory motifs at a genome scale Qin Ma 1,a , Bingqiang Liu 2,a , Chuan Zhou 1,2 , Yanbin Yin 3 , Guojun Li 1,2 , Ying Xu 1,4,5, * 1 Computational Systems Biology Laboratory, Department of Biochemistry and Molecular Biology and Institute of Bioinformatics, University of Georgia, Athens, GA 30602, USA 2 School of Mathematics, Shandong University, Jinan 250100, China 3 Department of Biological Sciences, Northern Illinois University, DeKalb, IL 60115-2857, USA 4 BioEnergy Science Center (http://bioenergycenter.org/), USA, and 5 College of Computer Science and Technology, Jilin University, Changchun, Jilin, China a The first two authors contributed equally to this paper * Corresponding author: Ying Xu

349

OP-NARE130261 1..10  

NLE Websites -- All DOE Office Websites (Extended Search)

analyses analyses of transcriptomic data reveal the dynamic organization of the Escherichia coli chromosome under different conditions Qin Ma 1 , Yanbin Yin 2 , Mark A. Schell 1 , Han Zhang 3 , Guojun Li 1,4 and Ying Xu 1,5,6, * 1 Computational Systems Biology Laboratory, Department of Biochemistry and Molecular Biology and Institute of Bioinformatics, University of Georgia, Athens, GA 30602, USA, 2 Department of Biological Sciences, Northern Illinois University, DeKalb, IL 60115-2857, USA, 3 Department of Automation and Intelligent Science, College of Information Technical Science, Nankai University, Tianjin 300071, China, 4 School of Mathematics, Shandong University, Jinan 250100, China, 5 The BioEnergy Science Center, USA and 6 College of Computer Science and Technology, Jilin University, Changchun, Jilin 130012, China Received December 6, 2012; Revised March 20, 2013; Accepted

350

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

351

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

352

Lattice vibrations of pure and doped GaSe  

SciTech Connect

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

353

GaAs solar cells close to the thermodynamic limit  

Science Journals Connector (OSTI)

The efficiency of GaAs solar cells can be increased by applying angularly selective filters. It is shown in terms of detailed balance model, why this happens and the concept is proven...

Hoehn, Oliver; Kraus, Tobias; Bauhuis, Gerard; Schwarz, Ulrich T; Blsi, Benedikt

354

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network (OSTI)

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

355

Modeling of InGaN/Si tandem solar cells  

Science Journals Connector (OSTI)

We investigate theoretically the characteristics of monolithic InGaN/Si two-junction series-connected solar cells using the air mass 1.5 global irradiance spectrum. The addition of an InGaN junction is found to produce significant increases in the energy conversion efficiency of the solar cell over that of one-junction Si cells. Even when Si is not of high quality such two-junction cells could achieve efficiencies high enough to be practically feasible. We also show that further though smaller improvements of the efficiency can be achieved by adding another junction to form an InGaN/InGaN/Si three-junction cell.

L. Hsu; W. Walukiewicz

2008-01-01T23:59:59.000Z

356

Exciton front propagation in photoexcited GaAs quantum wells  

E-Print Network (OSTI)

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton ...

Yang, Sen

357

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents (OSTI)

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

358

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy  

SciTech Connect

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 10{sup ?5} cm{sup ?1}, and the length of SFs is less than 15 nm.

Shao, Jiayi; Malis, Oana [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, Dmitri N. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)] [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Edmunds, Colin [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)] [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 49707 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 49707 (United States)

2013-12-02T23:59:59.000Z

359

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy  

Science Journals Connector (OSTI)

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular- ... (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as ... back surface field la...

Shulong Lu; Lian Ji; Wei He; Pan Dai; Hui Yang

2011-10-01T23:59:59.000Z

360

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network (OSTI)

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

362

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network (OSTI)

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

363

File:INL-geothermal-west-usa.pdf | Open Energy Information  

Open Energy Info (EERE)

west-usa.pdf west-usa.pdf Jump to: navigation, search File File history File usage Western United States Geothermal Resources Size of this preview: 653 × 599 pixels. Other resolution: 654 × 600 pixels. Full resolution ‎(4,639 × 4,256 pixels, file size: 1.29 MB, MIME type: application/pdf) Description Western United States Geothermal Resources Sources Idaho National Laboratory Authors Patrick Laney; Julie Brizzee Related Technologies Geothermal Creation Date 2003-11-01 Extent Regional Countries United States UN Region Northern America States Alaska, Arizona, California, Colorado, Hawaii, Idaho, Montana, Nevada, New Mexico, Oregon, Utah, Washington, Wyoming File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment

364

DOW CHEMICAL U.S.A. + WESTERN DIVISION  

Office of Legacy Management (LM)

DOW CHEMICAL U.S.A. + DOW CHEMICAL U.S.A. + WESTERN DIVISION 2855 MITCHELL DRIVE WALNUT CREEK. CtyLlFORNlA 94598 October 29,1976 415 944-2300 (., L,'; ! - J. 022 . William J. Thornton Health Protection Branch Safety and Environmental Control Division U.S. Energy Research and Development Administration Oak Ridge Operations P. 0. Box E Oak Ridge, Tennessee 37830 Dear Mr. Thornton: This letter is in response to your request of September 24,1976 for information on records of radiological condition of the laboratories at th$ Dow Pittsburg location. We have not been able to find records that would be applicable. The work was with natural uranium carried out under contract no. AT-(30-l)-GEN-236 which was concluded in 1957. We have now comileted a radiological survey of these laboratories since receipt

365

NPP Tundra: Point Barrow, Alaska [U.S.A.]  

NLE Websites -- All DOE Office Websites (Extended Search)

Point Barrow, Alaska, 1970-1972 Point Barrow, Alaska, 1970-1972 Data Citation Cite this data set as follows: Tieszen, L. L. 2001. NPP Tundra: Point Barrow, Alaska, 1970-1972. Data set. Available on-line [http://www.daac.ornl.gov] from Oak Ridge National Laboratory Distributed Active Archive Center, Oak Ridge, Tennessee, U.S.A. Description Productivity of a wet arctic tundra meadow was studied from 1970 to 1972 at Point Barrow, Alaska, U.S.A. Measurements of peak above-ground live biomass and leaf area index were made on 43 permanent plots, 1 m x 10 m, representing the spectrum of undisturbed vegetation. In addition, temporal variation in standing crop was assessed for the 1971 growing season for a sedge meadow only. The study area (71.30 N 156.67 W) is located 3 km inland from the Chukchi

366

NPP Tundra: Toolik Lake, Alaska [U.S.A.]  

NLE Websites -- All DOE Office Websites (Extended Search)

Toolik Lake, Alaska, 1982 Toolik Lake, Alaska, 1982 Data Citation Cite this data set as follows: Shaver, G. R. 2001. NPP Tundra: Toolik Lake, Alaska, 1982. Data set. Available on-line [http://www.daac.ornl.gov] from Oak Ridge National Laboratory Distributed Active Archive Center, Oak Ridge, Tennessee, U.S.A. Description Productivity of four contrasting vegetation types was studied during 1982 near Toolik Lake, Alaska, U.S.A. Above-ground biomass and below-ground stem/ rhizome biomass were measured on three occasions during the growing season; for (1) a "tussock" tundra containing graminoids, deciduous shrubs and evergreen shrubs, (2) a "shrub" tundra dominated by deciduous willow shrubs, (3) a "heath" tundra of evergreen shrubs, and (4) a "wet" tundra

367

Acciona Wind Energy USA LLC | Open Energy Information  

Open Energy Info (EERE)

Wind Energy USA LLC Wind Energy USA LLC Place Chicago, Illinois Zip 60631 Sector Wind energy Product US wind farms developer subsidiary of Acciona Energy (EHN). Coordinates 41.88415°, -87.632409° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.88415,"lon":-87.632409,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

368

NORDIC Wind Manufacturing Project Nordic Windpower USA Inc.  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2,2011 2,2011 Record of Categorical Exclusion for NORDIC Wind Manufacturing Project Nordic Windpower USA Inc. Description of Proposed Action: The Department of Energy's (DOE's) proposed action is to issue a loan guarantee to Nordic Windpower USA Inc., for the assembly and testing of two-bladed, patented teeter hub technology wind turbines. The initial production will be of 1 MW N 1 000 Nordic wind turbine nacelles. The assembly and testing operations would take place in an existing facility, Super Hangar Bay 12, within the Kansas City International Airport in Kansas City, Missouri. The Super Hangar facility is located adjacent to Interstate 29 on the east side of the airport. Bay 12 was designed for overhauling large aircraft such as the Boeing 747 and includes ample space for Nordic's assembly and testing operations. Project

369

Calyxo USA Solar Fields LLC | Open Energy Information  

Open Energy Info (EERE)

Calyxo USA Solar Fields LLC Calyxo USA Solar Fields LLC Jump to: navigation, search Name Calyxo USA (Solar Fields LLC) Place Perrysburg, Ohio Zip 43551 Sector Solar Product Producer of cadmium telluride photovoltaic modules. Q-Cells acquired Solar Fields IP and assets which have been transferred into the US branch of Q-Cells subsidiary Calyxo GmbH Coordinates 41.55671°, -83.628899° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.55671,"lon":-83.628899,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

370

Application of a modified denitrifying bacteria method for analyzing groundwater and vadose zone pore water nitrate at the Hanford Site, WA, USA.  

E-Print Network (OSTI)

the Hanford Site, WA, USA. Woods, Katharine N. ; Singleton,reside at DOE sites across the USA. Nitrate concentrations >

Woods, Katharine N.; Singleton, Michael J.; Conrad, Mark

2003-01-01T23:59:59.000Z

371

Electronic properties of the Ga vacancy in GaP(110) surfaces determined by scanning tunneling microscopy  

Science Journals Connector (OSTI)

The electronic properties of uncharged Ga monovacancies in GaP(110) surfaces are determined from voltage-dependent scanning tunneling microscopy images. The signatures of localized defect states in the band gap are analyzed and their spatial location is determined. Empty and occupied defect states exist. Depressed dangling bonds in the occupied-state images indicate an inward relaxation of the neighboring P atoms. The results agree with recent theoretical work.

Ph. Ebert and K. Urban

1998-07-15T23:59:59.000Z

372

Solar World USA not SolarWorld AG | Open Energy Information  

Open Energy Info (EERE)

World USA not SolarWorld AG World USA not SolarWorld AG Jump to: navigation, search Name Solar World USA (not SolarWorld AG) Place Colorado Springs, Colorado Zip 80907 Sector Solar Product Solar World manufactures solar powered products for educational, consumer, electronic and custom OEM markets. References Solar World USA (not SolarWorld AG)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar World USA (not SolarWorld AG) is a company located in Colorado Springs, Colorado . References ↑ "Solar World USA (not SolarWorld AG)" Retrieved from "http://en.openei.org/w/index.php?title=Solar_World_USA_not_SolarWorld_AG&oldid=351350" Categories: Clean Energy Organizations

373

Microscopic identification of the compensation mechanisms in Si-doped GaAs  

Science Journals Connector (OSTI)

The compensation mechanisms of SiGa donors in GaAs are determined by scanning tunneling microscopy. With increasing Si concentration the SiGa donors are consecutively electrically deactivated by SiAs acceptors, Si clusters, and SiGa-Ga-vacancy complexes. A microscopic model based on the screened Coulomb interaction between charged dopants, the amphoteric nature of Si, and the Fermi-level effect is proposed. It explains the observed defects, the critical Si concentrations of each identified mechanism, and predicts the solubility limit of Si in GaAs. 1996 The American Physical Society.

C. Domke, Ph. Ebert, M. Heinrich, and K. Urban

1996-10-15T23:59:59.000Z

374

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network (OSTI)

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

375

Paleoclimate History of the Arctic G H Miller, University of Colorado, Boulder, CO, USA; University of Iceland, Reykjavik, Iceland  

E-Print Network (OSTI)

Paleoclimate History of the Arctic G H Miller, University of Colorado, Boulder, CO, USA; University of Iceland, Reykjavik, Iceland J Brigham-Grette, University of Massachusetts, Amherst, MA, USA R B Alley, Pennsylvania State University, University Park, PA, USA L Anderson, US Geological Survey, Denver, CO, USA H

Wolfe, Alexander P.

376

Human Cathelicidin LL-37 Resistance and Increased Daptomycin MIC in Methicillin-Resistant Staphylococcus aureus Strain USA600 (ST45)  

E-Print Network (OSTI)

-Resistant Staphylococcus aureus Strain USA600 (ST45) Are Associated with Increased Mortality in a Hospital Setting George) USA600 has been associated with increased patient mortality. We found that USA600 MRSA exhibited significantly increased resistance to human cathelicidin LL-37 killing and daptomycin MIC creep compared to non-USA

Nizet, Victor

377

In-microbe formation of nucleotide sugars in engineered Escherichia coli  

NLE Websites -- All DOE Office Websites (Extended Search)

microbe microbe formation of nucleotide sugars in engineered Escherichia coli Ting Yang a , Yael Bar-Peled a , James Amor Smith a , John Glushka a , Maor Bar-Peled a,b,⇑ a Complex Carbohydrate Research Center (CCRC), University of Georgia, Athens, GA 30602, USA b Department of Plant Biology, University of Georgia, Athens, GA 30602, USA a r t i c l e i n f o Article history: Received 29 September 2011 Received in revised form 9 December 2011 Accepted 14 December 2011 Available online 20 December 2011 Keywords: Nucleotide sugar metabolism UDP-GalA UDP-Gal UDP-GlcNAcA UDP-XylNAc UDP-Glc 13 C-labeled nucleotide sugar 15 N-labeled nucleotide sugar E. coli In-microbe a b s t r a c t Numerous different nucleotide sugars are used as sugar donors for the biosynthesis of glycans by bacte- ria, humans, fungi, and plants. However, many of these nucleotide sugars are not available either in their native form

378

Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer  

SciTech Connect

Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup ?2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H. [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan); Kachi, T. [Toyota Central R and D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Sugimoto, M. [Toyota Motor Corporation, 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309 (Japan)

2013-12-04T23:59:59.000Z

379

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network (OSTI)

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

380

Growth of Core?Shell Ga?GaN Nanostructures via a Conventional Reflux Method and the Formation of Hollow GaN Spheres  

Science Journals Connector (OSTI)

Gallium nitride (GaN) is an important III?V semiconductor with a wide direct band gap of ?3.4 eV. ... LiHMDS exhibits good solubility in TOA. ... The products were collected by centrifugation twice at 7000 rpm for 2 min in hexane, isopropanol, ethanol, and then deionized water. ...

Tz-Jun Kuo; Chi-Liang Kuo; Chun-Hong Kuo; Michael H. Huang

2009-02-05T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

382

Metal contacts on ZnSe and GaN  

SciTech Connect

Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

Duxstad, K.J. [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering; [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

1997-05-01T23:59:59.000Z

383

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network (OSTI)

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

384

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

385

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN  

E-Print Network (OSTI)

. Hasama, "Subpicosecond saturation of intersubband absorption in (CdS/ZnSe)/BeTe quantum well waveguides. Cho, "Intersubband absorption at ~ 1.55 m in well- and modulation-doped GaN/AlGaN multiple quantum

386

Atomic-Level Study of Melting Behavior of GaN Nanotubes. | EMSL  

NLE Websites -- All DOE Office Websites (Extended Search)

Melting Behavior of GaN Nanotubes. Atomic-Level Study of Melting Behavior of GaN Nanotubes. Abstract: Molecular dynamics simulations with a Stillinger-Weber potential have been...

387

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

388

Device-level thermal analysis of GaN-based electronics  

E-Print Network (OSTI)

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

389

Recent Photovoltaic Performance Data in the USA (Presentation)  

SciTech Connect

This paper presents performance data from nearly 50,000 Photovoltaic systems totaling 1.7 Gigawatts installed capacity in the USA from 2009 to 2012. 90% of the systems performed to within 10% or better of expected performance. Only 2-4% of the data indicate issues significantly affecting the system performance. Special causes of underperformance and their impacts are delineated by reliability category. Delays and interconnections dominate project-related issues particularly in the first year, but total less than 0.5% of all systems. Hardware-related issues are dominated by inverter problems totaling less than 0.4% and underperforming modules to less than 0.1%.

Jordan, D.

2014-03-01T23:59:59.000Z

390

Structural ordering and interface morphology in symmetrically strained(GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)  

Science Journals Connector (OSTI)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest ?110? directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation. A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

C. Giannini; L. Tapfer; Y. Zhuang; L. De Caro; T. Marschner; W. Stolz

1997-02-15T23:59:59.000Z

391

THERMAL STUDY OF A GaN-BASED HEMT A Dissertation  

E-Print Network (OSTI)

of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) under bias conditions. An experimental

Sen, Mihir

392

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

393

Doping and isolation of GaN, InGaN and InAlN using ion implantation  

SciTech Connect

Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after subsequent annealing in the range 600-700{degrees}C. Smaller increases in sheet resistance are observed for In{sub x}Ga{sup 1-x}N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.

Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States)] [and others

1995-08-01T23:59:59.000Z

394

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

395

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Universit, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

396

De'Longhi USA: Proposed Penalty (2010-CE-2114) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

De'Longhi USA: Proposed Penalty (2010-CE-2114) De'Longhi USA: Proposed Penalty (2010-CE-2114) De'Longhi USA: Proposed Penalty (2010-CE-2114) September 8, 2010 DOE alleged in a Notice of Proposed Civil Penalty that De'Longhi USA, Inc. failed to certify a variety of dehumidifiers as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. De'Longhi USA: Proposed Penalty (2010-CE-2114) More Documents & Publications De'Longhi USA: Order (2010-CE-2114) Basement Systems: Proposed Penalty (2010-CE-2110)

397

U.S. Department of Energy Awards a Contract to USA Repository Services for  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

a Contract to USA Repository a Contract to USA Repository Services for Management and Operating Contractor Support for the Yucca Mountain Project U.S. Department of Energy Awards a Contract to USA Repository Services for Management and Operating Contractor Support for the Yucca Mountain Project October 30, 2008 - 4:14pm Addthis Washington, D.C. -- The U.S. Department of Energy (DOE) today awarded a $2.5 billion management and operating (M&O) contract to USA Repository Services (USA-RS), a wholly-owned subsidiary of the URS Corporation. USA-RS will be supported by principal subcontractors: Shaw Environmental and Infrastructure, Inc., and AREVA Federal Services, Inc. "If we are to meet growing energy demand and slow the growth of greenhouse gas emissions, nuclear power must be a larger part of our energy mix; it is

398

U.S. Department of Energy Awards a Contract to USA Repository Services for  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

U.S. Department of Energy Awards a Contract to USA Repository U.S. Department of Energy Awards a Contract to USA Repository Services for Management and Operating Contractor Support for the Yucca Mountain Project U.S. Department of Energy Awards a Contract to USA Repository Services for Management and Operating Contractor Support for the Yucca Mountain Project October 30, 2008 - 4:14pm Addthis Washington, D.C. -- The U.S. Department of Energy (DOE) today awarded a $2.5 billion management and operating (M&O) contract to USA Repository Services (USA-RS), a wholly-owned subsidiary of the URS Corporation. USA-RS will be supported by principal subcontractors: Shaw Environmental and Infrastructure, Inc., and AREVA Federal Services, Inc. "If we are to meet growing energy demand and slow the growth of greenhouse gas emissions, nuclear power must be a larger part of our energy mix; it is

399

DuraLamp USA: Proposed Penalty (2010-CE-0912) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DuraLamp USA: Proposed Penalty (2010-CE-0912) DuraLamp USA: Proposed Penalty (2010-CE-0912) DuraLamp USA: Proposed Penalty (2010-CE-0912) September 9, 2010 DOE alleged in a Notice of Proposed Civil Penalty that DuraLamp USA, Inc. failed to certify a variety of general service fluorescent lamps as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. DuraLamp USA: Proposed Penalty (2010-CE-0912) More Documents & Publications DuraLamp USA: Order (2010-CE-0912)

400

Novel photoaffinity ligands for the GA-receptor  

SciTech Connect

Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

Suttle, J.C.; Hultstrand, J.F.; Tanaka, F.S. (USDA/ARS Biosciences Research Laboratory, Fargo, ND (USA))

1990-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

402

Invited Paper GaAs/A1O photonic bandgap material fabrication and characterization  

E-Print Network (OSTI)

semiconductor crystals, photonic crystals do not occur naturally. There are, therefore, several seemingly direct bandgap semiconductors, such as GaAs, A1GaAs, InP, InGaAsP, etc., in which the radiative-dimensional photonic bandgaps for microwave and millimeter-wave radiation, and for shorter optical wavelengths in one

Zhou, Weidong

403

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network (OSTI)

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

404

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

405

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network (OSTI)

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

406

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network (OSTI)

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

407

Nuclear power economics and prospects in the USA  

Science Journals Connector (OSTI)

This paper addresses three questions concerning the economics of and prospects for nuclear power in the USA: (1) What is the long-term economic future of nuclear energy? (2) Is the inability to resolve the nuclear waste issue a factor that will limit new nuclear plant development? (3) Are the new designs for nuclear plants an advance over current designs? With respect to the first question, we find that the long-term economic future of nuclear energy is uncertain, at best. Despite recent interest in a 'nuclear renaissance', objective, rigorous studies have concluded that at present, new nuclear power plants are not economically competitive with coal or natural gas for electricity generation and will not be for the foreseeable future. With respect to the second question, we find that the inability to resolve the nuclear waste issue will likely limit new nuclear plant development. Nuclear waste disposal poses a serious, seemingly intractable problem for the future of nuclear power and the waste issue could be a showstopper for new nuclear plants. With respect to the third question, the new designs for nuclear plants are an advance over current designs, but only marginally. Thus, while some new nuclear power plants will likely be built in the USA over the next two decades, a major 'nuclear renaissance' is unlikely.

Roger H. Bezdek

2009-01-01T23:59:59.000Z

408

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

409

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

410

Surface morphology and magnetic anisotropy in (Ga,Mn)As  

E-Print Network (OSTI)

Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.

S. Piano; X. Marti; A. W. Rushforth; K. W. Edmonds; R. P. Campion; O. Caha; T. U. Schulli; V. Holy; B. L. Gallagher

2010-10-01T23:59:59.000Z

411

Operating experience with a GaAs photoemission electron source  

SciTech Connect

We report on the development of several operating procedures that promise to make GaAs photoemission electron sources easier to construct, more reliable to operate, and more amenable to use in dynamic vacuum systems. We describe in particular a method for ''ohmically'' heating a <100> crystal of GaAs under vacuum to approximately 600 /sup 0/C. We also discuss our observations of the role of oxygen in the activation of the crystal surface, the use of continuous cesiation, and of the performance of the crystal under varying vacuum conditions.

Tang, F.C.; Lubell, M.S.; Rubin, K.; Vasilakis, A.; Eminyan, M.; Slevin, J.

1986-12-01T23:59:59.000Z

412

An investigation on reliable passivation of GaP  

E-Print Network (OSTI)

reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index... reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index...

Greaves King, Carlos A.

2012-06-07T23:59:59.000Z

413

You've got that Sinking Feeling: Measuring Subsidence above Abandoned Underground Mines in Ohio, USA.  

E-Print Network (OSTI)

??As a result of more than 200 years of underground coal mining, many urbanized areas throughout Ohio, USA, are susceptible to land subsidence. Approximately 6,000 (more)

Siemer, Kyle W

2013-01-01T23:59:59.000Z

414

E-Print Network 3.0 - austin texas usa Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Arbor Day... Foundation has recognized The University of Texas at Austin as a Tree Campus USA for the university... that the university has earned Tree Campus ... Source: Ruoff,...

415

ENG-Canada-USA Government Procurement (clean 11 Feb 2010 printed...  

Energy Savers (EERE)

ENG-Canada-USA Government Procurement (clean 11 Feb 2010 printed) More Documents & Publications DOE F 551.1 hdhydrogen2007.xls Energy Storage Systems 2010 Update Conference...

416

Norway and the USA: The Norwegian Media's Coverage of September 11, 2001.  

E-Print Network (OSTI)

??The terrorist attack in the USA on September 11, 2001, is perhaps the most significant event in recent American history. This thesis is a study (more)

degrd, Per Refseth

2005-01-01T23:59:59.000Z

417

Interband transitions in molecular?beam?epitaxial Al x Ga1?x As/GaAs  

Science Journals Connector (OSTI)

Interband transition energies for Al x Ga1?x As layers grown by molecular?beam epitaxy(MBE) techniques have been determined using the electrolyte electroreflectance (EER) technique. The observed data fit quadratic relations for E 0 E 0+?0 E 1 and E 1+?1 to describe variations of energy with composition. Although the x values were not accurately known the internal consistency of the data is excellent. Given a single bowing parameter we show that accurate values of x can be determined. The EER technique can provide x values with an accuracy better than 0.02 and information on changes in x as small as 0.002. It is thus ideally suited for studying MBE materials.

J. L. Aubel; U. K. Reddy; S. Sundaram; W. T. Beard; James Comas

1985-01-01T23:59:59.000Z

418

Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells  

Science Journals Connector (OSTI)

Dry etch induced damage of GaAs/InGaAs/GaAs heterostructures in an electron cyclotron resonance (ECR) argon discharge has been investigated as a function of additional radio frequency self?biasing of the sample and process pressure in argon ECR discharges. We used depth resolved photoluminescence measurements to determine the influence of the etch process on the samples. We observe a decreasing damage depth for smaller bias voltages reaching its lowest value of 1.7 nm at 20 V bias and a pressure of 0.15 Pa. For lower pressures we observe a strong increase of the damage which is attributed predominantly to high energetic vacuum ultraviolet radiation from the ECR region.

T. Bickl; B. Jacobs; J. Straka; A. Forchel

1993-01-01T23:59:59.000Z

419

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

420

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy  

Science Journals Connector (OSTI)

The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are addressed. The axial and radial growth rates as a function of the Ga rate and As pressure indicate that on the opposite of what is observed in thin film epitaxy, the growth rate of the nanowires is arsenic limited. As a consequence, the axial growth rate of the wires can be controlled by the As4 pressure. Additionally, due to the small As4 pressure leading to nanowire growth, the deposition on the facets is very slow, leading to a much lower radial growth rate. Finally, we present a model that is able to accurately describe the presented observations and predicts a maximum length of nontapered nanowires of 40?m.

C. Colombo; D. Spirkoska; M. Frimmer; G. Abstreiter; A. Fontcuberta i Morral

2008-04-28T23:59:59.000Z

422

Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures  

Science Journals Connector (OSTI)

The carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well heterostructures have been determined as a function of the incorporated compressive strain in the (GaIn)As quantum-well layer by applying magneto-optical studies. The precise structural parameters, i.e., individual layer thicknesses, strain values, and crystalline perfection, have been determined independently by high-resolution x-ray diffraction and transmission electron microscopy. By analyzing both the allowed and forbidden optical transitions as a function of the magnetic field, detected by polarization-dependent magnetophotoluminescence excitation spectroscopy, the exciton binding energy as well as the effective in-plane electron and heavy-hole masses have been determined quantitatively as a function of strain. The theoretically predicted significant decrease of the in-plane heavy-hole mass with increasing strain has been observed. The obtained results are discussed and compared with the contradictory results reported in the literature.

M. Volk; S. Lutgen; T. Marschner; W. Stolz; E. O. Gbel; P. C. M. Christianen; J. C. Maan

1995-10-15T23:59:59.000Z

423

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

424

InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy  

SciTech Connect

We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial In{sub x}Ga{sub 1-x}As (x{approx}0.20) inserts with thicknesses from 36 to 220 nm with {+-}10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration.

Shapiro, J. N.; Lin, A.; Wong, P. S.; Scofield, A. C.; Tu, C.; Senanayake, P. N.; Mariani, G.; Liang, B. L.; Huffaker, D. L. [Department of Electrical Engineering and California Nano-Systems Institute, University of California at Los Angeles, Los Angeles, California 90095 (United States)

2010-12-13T23:59:59.000Z

425

Business address : Athens University of Economics and Business 76, Patision St., 104 34, Athens  

E-Print Network (OSTI)

the Impact of ,,Liberalisation on Auditor Behaviour: Accounting Research in Politically Charged Contexts of Liberalisation on Auditor Behaviour", European Accounting Review (ABS 3), 1997, Vol. 6: 1, 1997, pp. 85

Chatziantoniou, Damianos

426

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

427

Structure of negatively charged muonium in n-type GaAs  

Science Journals Connector (OSTI)

Muon level-crossing resonance and muon-spin-rotation measurements on heavily doped n-type GaAs:Si and GaAs:Te show that the majority of positive muons implanted at room temperature form an isolated diamagnetic muonium center located at a high-symmetry site with Ga neighbors along the ?111? direction(s). These experiments, together with theoretical considerations, imply that negatively charged muonium is at or near the tetrahedral interstitial site with four Ga nearest-neighbor atoms. Except for zero-point energy differences, these results should model negatively charged isolated hydrogen in GaAs.

K.H. Chow; R.F. Kiefl; W.A. MacFarlane; J.W. Schneider; D.W. Cooke; M. Leon; M. Paciotti; T.L. Estle; B. Hitti; R.L. Lichti; S.F.J. Cox; C. Schwab; E.A. Davis; A. Morrobel-Sosa; L. Zavieh

1995-05-15T23:59:59.000Z

428

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density  

E-Print Network (OSTI)

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

Chen, Zhi

429

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network (OSTI)

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

430

Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy  

SciTech Connect

We report on the studies of optical phonon modes in nearly defect-free GaN nanowires embedded with intrinsic InGaN quantum dots by using oblique angle transmission infrared spectroscopy. These phonon modes are dependent on the nanowire fill-factor, doping densities of the nanowires, and the presence of InGaN dots. These factors can be applied for potential phonon based photodetectors whose spectral responses can be tailored by varying a combination of these three parameters. The optical anisotropy along the growth (c-) axis of the GaN nanowire contributes to the polarization agility of such potential photodetectors.

Titus, J.; Perera, A. G. U. [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)] [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States); Nguyen, H. P. T.; Mi, Z. [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)] [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)

2013-03-25T23:59:59.000Z

431

GA103 a microprogrammable processor for online filtering  

E-Print Network (OSTI)

GA103 is a 16 bit microprogrammable processor, which emulates the PDP 11 instruction set. It is based on the Am2900 slices. It allows user- implemented microinstructions and addition of hardwired processors. It will perform online filtering tasks in the NA14 experiment at CERN, based on the reconstruction of transverse momentum of photons detected in a lead glass calorimeter. (3 refs).

Calzas, A; Danon, G

1981-01-01T23:59:59.000Z

432

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical  

E-Print Network (OSTI)

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

Iosup, Alexandru

433

Response of GaAs to fast intense laser pulses  

E-Print Network (OSTI)

Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

Graves, JS; Allen, Roland E.

1998-01-01T23:59:59.000Z

434

Recombination in Low-Bandgap InGaAs  

SciTech Connect

We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

Gfroerer, T. H.; Wanlass, M. W.

2006-01-01T23:59:59.000Z

435

High-quality InP on GaAs  

E-Print Network (OSTI)

In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

Quitoriano, Nathaniel Joseph

2006-01-01T23:59:59.000Z

436

MOCVD Growth of AlGaInN for UV Emitters  

SciTech Connect

Issues related to the growth of nitride-based UV emitters are investigated in this work. More than 100 times of improved in the optical efficiency of the GaN active region can be attained with a combination of raising the growth pressure and introducing a small amount of indium. The unique issue in the UV emitter concerning the use of AlGaN for confinement and the associated tensile cracking is also investigated. They showed that the quaternary AlGaInN is potentially capable of providing confinement to GaN and GaN:In active regions while maintaining lattice matching to GaN, unlike the AlGaN ternary system.

Crawford, Mary; Han, Jung

1999-07-07T23:59:59.000Z

437

Indicators of longitudinal unevenness of roads in the USA  

Science Journals Connector (OSTI)

About 25,800 longitudinal profiles of in-service roads in the USA (Long-Term Pavement Performance (LTPP) Program) were evaluated to obtain indicators of the longitudinal unevenness (roughness) of the road surface defined by standards ISO 8608 : 1995 and EN 13036-5 : 2006. Besides the commonly used International Roughness Index (IRI), also parameters of the Power Spectral Density (PSD) were evaluated taking into account not only the whole interval of effectively acting wavelengths, but also its two and three partial sub-bands. Differences between left and right tracks and between Asphalt Concrete (AC) and Portland Cement Concrete (CC) wearing courses were considered. For all the mentioned indicators (21), their Probability Density Functions (PDF) and numerical statistics were estimated.

Oldrich Kropac; Peter Mucka

2008-01-01T23:59:59.000Z

438

Xu Y. Computational  

NLE Websites -- All DOE Office Websites (Extended Search)

Xu Xu Y. Computational challenges in deciphering genomic structures of bacteria. JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY 25(1): 53-70 Jan. 2010 Computational Challenges in Deciphering Genomic Structures of Bacteria Ying Xu (Å ) Computational Systems Biology Laboratory, Department of Biochemistry and Molecular Biology and Institute of Bioinformatics, The University of Georgia, Athens, GA 30602, U.S.A. BESC BioEnergy Science Center, U.S.A. College of Computer Science and Technology, Jilin University, Changchun 130012, China E-mail: xyn@bmb.uga.edu Received October 1, 2009; revised November 16, 2009. Abstract This article addresses how the functionalities of the cellular machinery of a bacterium might have constrained the genomic arrangement of its genes during evolution and how we can study such problems using computational approaches, taking full advantage

439

A 1.5 A resolution X-ray structure of the catalytic module of Caldicellulosiruptor bescii family 3 pectate lyase  

NLE Websites -- All DOE Office Websites (Extended Search)

1498 1498 doi:10.1107/S1744309111038449 Acta Cryst. (2011). F67, 1498-1500 Acta Crystallographica Section F Structural Biology and Crystallization Communications ISSN 1744-3091 A 1.5 A ˚ resolution X-ray structure of the catalytic module of Caldicellulosiruptor bescii family 3 pectate lyase Markus Alahuhta, a Puja Chandrayan, b Irina Kataeva, b Michael W. W. Adams, b Michael E. Himmel a and Vladimir V. Lunin a * a BioSciences Center, National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401, USA, and b Department of Biochemistry and Molecular Biology, University of Georgia, Athens, GA 30602-7229, USA Correspondence e-mail: vladimir.lunin@nrel.gov Received 17 August 2011 Accepted 19 September 2011 PDB Reference: family 3 pectate lyase catalytic module, 3t9g. A 1.5 A ˚ resolution X-ray structure of the catalytic module of Caldicellulosi- ruptor bescii

440

Large-Scale Analyses of Glycosylation in Cellulases  

NLE Websites -- All DOE Office Websites (Extended Search)

Article Article Large-Scale Analyses of Glycosylation in Cellulases Fengfeng Zhou 1,2 , Victor Olman 1,2 , and Ying Xu 1,2 * 1 Computational Systems Biology Laboratory, Department of Biochemistry and Molecular Biology / Institute of Bioinformatics, University of Georgia, Athens, GA 30602-7229, USA; 2 BioEnergy Science Center, Oak Ridge National Laboratory, Oak Ridge, TN 37830-8050, USA. *Corresponding author. E-mail: xyn@bmb.uga.edu DOI: 10.1016/S1672-0229(08)60049-2 Cellulases are important glycosyl hydrolases (GHs) that hydrolyze cellulose poly- mers into smaller oligosaccharides by breaking the cellulose β (1→4) bonds, and they are widely used to produce cellulosic ethanol from the plant biomass. N-linked and O-linked glycosylations were proposed to impact the catalytic ef f iciency, cel- lulose binding af f inity and the stability of cellulases based on observations

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

1471-2164-10-14.fm  

NLE Websites -- All DOE Office Websites (Extended Search)

9 9 (page number not for citation purposes) BMC Genomics Open Access Database RepPop: a database for repetitive elements in Populus trichocarpa Fengfeng Zhou 1,2 and Ying Xu* 1,2 Address: 1 Computational Systems Biology Laboratory, Department of Biochemistry and Molecular Biology, and Institute of Bioinformatics, University of Georgia, Athens, GA 30602, USA and 2 BioEnergy Science Center, Tennessee, USA Email: Fengfeng Zhou - ffzhou@csbl.bmb.uga.edu; Ying Xu* - xyn@bmb.uga.edu * Corresponding author Abstract Background: Populus trichocarpa is the first tree genome to be completed, and its whole genome is currently being assembled. No functional annotation about the repetitive elements in the Populus trichocarpa genome is currently available. Results: We predicted 9,623 repetitive elements in the Populus trichocarpa genome, and assigned

442

OP-NARE131048 1..6  

NLE Websites -- All DOE Office Websites (Extended Search)

DOOR DOOR 2.0: presenting operons and their functions through dynamic and integrated views Xizeng Mao 1,2 , Qin Ma 1,2 , Chuan Zhou 1,3 , Xin Chen 1,4 , Hanyuan Zhang 1,4 , Jincai Yang 5 , Fenglou Mao 1 , Wei Lai 1 and Ying Xu 1,2,4, * 1 Computational Systems Biology Laboratory, Department of Biochemistry and Molecular Biology, and Institute of Bioinformatics, University of Georgia, Athens, GA 30602, USA, 2 BioEnergy Science Center (BESC), Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA, 3 School of Mathematics, Shandong University, Jinan, Shandong 250100, China, 4 College of Computer Science and Technology, Jilin University, Changchun, Jilin 130012, China and 5 College of Computer Science, Central China Normal University, Wuhan, Hubei 430079, China Received September 1, 2013; Revised October 10, 2013; Accepted October 11, 2013 ABSTRACT We have recently developed a new

443

The structure and mode of action of Caldicellulosiruptor bescii family 3 pectate lyase in biomass deconstruction  

NLE Websites -- All DOE Office Websites (Extended Search)

534 534 doi:10.1107/S0907444912050512 Acta Cryst. (2013). D69, 534-539 Acta Crystallographica Section D Biological Crystallography ISSN 0907-4449 The structure and mode of action of Caldicellulosiruptor bescii family 3 pectate lyase in biomass deconstruction Markus Alahuhta, a Roman Brunecky, a Puja Chandrayan, b Irina Kataeva, b Michael W. W. Adams, b Michael E. Himmel a and Vladimir V. Lunin a * a Biosciences Center, National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, CO 80401-3305, USA, and b Department of Biochemistry and Molecular Biology, University of Georgia, Athens, GA 30602-7229, USA Correspondence e-mail: vladimir.lunin@nrel.gov # 2013 International Union of Crystallography Printed in Singapore - all rights reserved The unique active site of the Caldicellulosiruptor bescii family 3 pectate lyase catalytic module (PL3-cat) has been structu-

444

David Aspinwall Dai Evans USA and Australian citizenships; spouse Lely Dai Evans,  

E-Print Network (OSTI)

David Aspinwall Dai Evans USA and Australian citizenships; spouse Lely Dai Evans, children Corinne (born 2002) and James (born 2003) Dept. Geology & Geophysics, Yale Univ., 210 Whitney Ave., New Haven CT 06520-8109, USA Tel. +1(203)432-3127 Fax. +1(203)432-3134 Email. david.evans@yale.edu Employment

445

Environmental Toxicology and Chemistry, Vol. 22, No. 1, pp. 175181, 2003 Printed in the USA  

E-Print Network (OSTI)

of Biochemistry and Molecular Biology, Medical College of Georgia, Augusta, Georgia 30912, USA §Savannah River Ecology Lab, University of Georgia, Aiken, South Carolina 29802, USA (Received 22 March 2002; Accepted 3 for this technology include identification of unknown toxicants, assessment of toxicity of new compounds

Krizek, Beth

446

ICPSOP 2000 Accra, Ghana THE EVOLUTION OF THE U.S.A. OPEN ACCESS  

E-Print Network (OSTI)

toward the regionalization of the transmission system currently underway. © Copyright George Gross, 2000ICPSOP 2000 Accra, Ghana 1 THE EVOLUTION OF THE U.S.A. OPEN ACCESS TRANSMISSION REGIME by George Gross University of Illinois at Urbana-Champaign Urbana, IL 61801, USA gross@uiuc.edu ABSTRACT

Gross, George

447

Sourcing seafood for the three major markets: The EU, Japan and the USA Wilf Swartz n  

E-Print Network (OSTI)

Sourcing seafood for the three major markets: The EU, Japan and the USA Wilf Swartz n , U. Rashid Accepted 27 June 2010 Keywords: Seafood consumption Global fisheries International trade Sustainability a b's major seafood markets (the EU, Japan and the USA) using a series of global maps indicating the likely

Pauly, Daniel

448

Int. J. Wildland Fire 6(3): 97-105, 1996 Ca IAWF. Printed in USA.  

E-Print Network (OSTI)

pine tree densities and basal areas in Black Hills forests for the period 1874 to 1995, with up to five Ponderosa Pine Communities of the Black Hills, South Dakota, USA Peter M. Brown1 and Carolyn Hull Sieg2 1 Rocky Mountain Forest and Range Experiment Station, 240 W. Prospect Rd., Fort Collins, CO 80526 USA

449

Environmental Toxicology and Chemistry, Vol. 18, No. 3, pp. 426429, 1999 Printed in the USA  

E-Print Network (OSTI)

--Nonaqueous phase liquid Polycyclic aromatic hydrocarbons Coal tar UNIFAC Multicomponent INTRODUCTION Many in the USA 0730-7268/99 $9.00 .00 UNIFAC MODELING OF MULTICOMPONENT NONAQUEOUS PHASE LIQUIDS CONTAINING-2125, USA (Received 12 March 1998; Accepted 17 June 1998) Abstract--Multicomponent nonaqueous phase liquid

Peters, Catherine A.

450

The 33rd International Electric Propulsion Conference, The George Washington University, USA October 6 10, 2013  

E-Print Network (OSTI)

Raitses2 Princeton Plasma Physics Laboratory, Princeton, NJ, 08543, USA Bruce E. Koel3 Princeton Principal Research Physicist, Princeton Plasma Physics Laboratory, yraitses@pppl.gov. 3 Professor University, Princeton, NJ, 08540, USA and Richard E. Wirz4 University of California, Los Angeles, CA 90095

451

E-Print Network 3.0 - argonne il usa Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

il usa Search Powered by Explorit Topic List Advanced Search Sample search results for: argonne il usa Page: << < 1 2 3 4 5 > >> 1 T H E U . S . D E P A R T M E N T O F E N E R G Y...

452

Projected Performance of Three- and Four-Junction Devices Using GaAs and GaInP  

E-Print Network (OSTI)

This paper explores the efficiencies expected for three- and four-junction devices for both space and terrestrial applications. For space applications, the effects of temperature and low concentration are investigated. For terrestrial applications, a concentration of 500 suns is assumed and the theoretical efficiencies are calculated as a function of spectral variations including the effects of air mass, turbidity, and water-vapor content. INTRODUCTION Ga 0.5 In 0.5 P/GaAs two-terminal, two-junction solar cells, invented and developed at the National Renewable Energy Laboratory, are in production at both TECSTAR and Spectrolab. The immediate market for these devices is in space; a future (potentially larger) market is terrestrial concentrator systems. The next-generation cells will add additional junction(s) in order to increase the efficiency. Work on a three-junction cell using an active Ge junction under the Ga 0.5 In 0.5 P/GaAs dual-junction cell has already been reported [1]. Ho...

Gainp; S. R. Kurtz; Sarah R. Kurtz; D. Myers; D. Myers; J.M. Olson; J. M. Olson

1997-01-01T23:59:59.000Z

453

Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices  

E-Print Network (OSTI)

of thermoelectric energy conversion devices depends on the thermoelectric figure of merit ZT of a material, which- troduced charge carriers in the ErAs:InGaAs regions of 0, 2 1018 , 4 1018 , and 8 1018 cm-3 , respectively. There- fore, the effective carrier concentrations in the four samples were 2 1018 , 4 1018 , 6 1018

454

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

SciTech Connect

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

455

Alpha-Toxin Induces Programmed Cell Death of Human T cells, B cells, and Monocytes during USA300 Infection  

E-Print Network (OSTI)

This investigation examines the influence of alpha-toxin (Hla) during USA300 infection of human leukocytes. Survival of an USA300 isogenic deletion mutant of hla (USA300Dhla) in human blood was comparable to the parental wild-type strain and polymorphonuclear leukocyte (PMN) plasma membrane permeability caused by USA300 did not require Hla. Flow cytometry analysis of peripheral blood mononuclear cells (PBMCs) following infection by USA300, USA300Dhla, and USA300Dhla transformed with a plasmid over-expressing Hla (USA300Dhla Comp) demonstrated this toxin plays a significant role inducing plasma membrane permeability of CD14 +, CD3 +, and CD19 + PBMCs. Rapid plasma membrane permeability independent of Hla was observed for PMNs, CD14 + and CD19 + PBMCs following intoxication with USA300 supernatant while the majority of CD3 + PBMC plasma membrane permeability induced by USA300 required Hla. Addition of recombinant Hla to USA300Dhla supernatant rescued CD3 + and CD19 + PBMC plasma membrane permeability generated by USA300 supernatant. An observed delay in plasma membrane permeability caused by Hla in conjunction with Annexin V binding and ApoBrdU Tunel assays examining PBMCs intoxicated with recombinant Hla or infected with USA300, USA300Dhla, USA300Dhla Comp, and USA300DsaeR/S suggest Hla induces programmed cell death of monocytes, B cells, and T cells that results in plasma membrane permeability. Together these findings underscore the importance of Hla during S. aureus infection of human tissue and specifically demonstrate Hla activity during USA300 infection triggers programmed

Tyler K. Nygaard; Kyler B. Pallister; Ashley L. Dumont; Mark Dewald; Robert L. Watkins; Erik Q. Pallister; Cheryl Malone; Shannon Griffith; Er R. Horswill; Victor J. Torres; Jovanka M. Voyich

456

EA-1188: Chevron U.S.A., Inc. and Santa Fe Energy Resources, Inc. Midway  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

188: Chevron U.S.A., Inc. and Santa Fe Energy Resources, Inc. 188: Chevron U.S.A., Inc. and Santa Fe Energy Resources, Inc. Midway Valley 3D Seismic Project, Kern County, California EA-1188: Chevron U.S.A., Inc. and Santa Fe Energy Resources, Inc. Midway Valley 3D Seismic Project, Kern County, California SUMMARY This EA evaluates the environmental impacts for the proposed Midway Valley 3D Geophysical Exploration Project. Chevron U.S.A., Inc. and Santa Fe Energy Resources are proposing to conduct seismic investigations just southeast of the City of McKittrick and Derby Acres in the Buena Vista and Midway Valleys, Kern County, California. PUBLIC COMMENT OPPORTUNITIES None available at this time. DOCUMENTS AVAILABLE FOR DOWNLOAD January 13, 1999 EA-1188: Finding of No Significant Impact Chevron U.S.A., Inc. and Santa Fe Energy Resources, Inc. Midway Valley 3D

457

STATEMENT OF CONSIDERATIONS REQUEST BY STUART ENERGY USA FOR AN ADVANCED WAIVER OF  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

STUART ENERGY USA FOR AN ADVANCED WAIVER OF STUART ENERGY USA FOR AN ADVANCED WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER COOPERATIVE AGREEMENT NO. DE-FC36-97GO10221,A001, W(A)-98-017, CH-0983 The Petitioner, Stuart Energy USA, a wholly owned subsidiary of Electrolyser Corporation Ltd. of Toronto, Canada, was awarded this cooperative agreement in response to a proposal to build and supply working models and prototypes of hydrogen fuel appliances based on water electrolysis. The initial phase of this work is being performed under DOE Contract No. DE-FC36-97GO10221. Stuart Energy USA is a large business and has requested a waiver of domestic and foreign patent rights for all subject inventions made by its employees under this agreement. As brought out in Stuart Energy USA's response to question 3, the total estimated cost of the project is

458

Energy Efficiency and Conservation Block Grant Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-City-Athens-Clarke, Unified Government of GA-City-Athens-Clarke, Unified Government of Location: City Athens-Clarke, Unified Government of GA American Recovery and Reinvestment Act: Proposed Action or Project Description 1) Develop the Energy Efficiency and Conservation Strategy, 2) conduct energy audits (approval for audits only excludes implementation), 3) indoor and outdoor lighting retrofits at several government facilities, 4) replace natural gas water heater systems on government facilities, 5) replace warning light assemblies at schools in Athens-Clarke County, and 6) install a roof-mounted photovoltaic system at the Athens-Clark County Multi-Modal Transportation Center Conditions: None Categorical Exclusion(s) Applied: A9, A11, B1.32, B2.5, B5.1 *-For the complete DOE National Environmental Policy Act regulations regarding categorical exclusions, see Subpart D of 10 CFR10 21

459

Energy Efficiency and Conservation Block Grant Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-City-Athens-Clarke, Unified Government of GA-City-Athens-Clarke, Unified Government of Location: City Athens-Clarke, Unified Government of GA American Recovery and Reinvestment Act: Proposed Action or Project Description: 1) Develop the Energy Efficiency and Conservation Strategy, 2) conduct energy audits (approval for audits only excludes implementation), 3) indoor and outdoor lighting retrofits at several government facilities, 4) replace natural gas water heater systems on government facilities, 5) replace warning light assemblies at schools in Athens-Clarke County, 6) install a roof-mounted photovoltaic system at the Athens-Clark County Multi-Modal Transportation Center, and 7) replace HVAC system at Data Processing Center. Conditions: None Categorical Exclusion(s) Applied: A9, A11, B1.32,

460

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network (OSTI)

ASCR, Na Slovance 2, 182 21 Praha 8, Czech Republic 2Department of Physics, Texas A&M University, College Station, Texas 77843-4242, USA 3Department of Physics, University of Texas at Austin, Austin, Texas 78712-1081, USA 4School of Physics... and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom 5Institute of Physics ASCR, Cukrovarnick? 10, 162 53 Praha 6, Czech Republic #1;Received 6 September 2006; published 12 January 2007#2; A remarkable progress towards functional...

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Abstract N is often cited as a limiting factor for sapling growth in northeastern USA forests. However, under  

E-Print Network (OSTI)

State University, Pocatello, Idaho 83209­8007, USA J.L. Schnurr Sheldon Jackson College 801 Lincoln St. Sitka, Alaska 99835 C.D. Canham Institute of Ecosystem Studies, Box AB, Millbrook, New York 12545, USA

462

Fok, M. (2011), 'Gone with transgenic cotton cropping in the USA. A perception of the presentations and interactions at the beltwide cotton conferences, new orleans (louisiana, USA), 4-7/01/2010'.  

E-Print Network (OSTI)

Fok, M. (2011), 'Gone with transgenic cotton cropping in the USA. A perception of the presentations and interactions at the beltwide cotton conferences, new orleans (louisiana, USA), 4-7/01/2010'. Biotechnol. Agron. Soc. Environ., vol. 15, no. 4, pp. 545-552. Gone with transgenic cotton in the USA A perception

Paris-Sud XI, Université de

463

For more information, please contact your nearest World Scientific office: USA office: 27 Warren Street, Suit 401-402 Hackensack, NJ 07601, USA Toll-free Fax: 1 888 977 2665  

E-Print Network (OSTI)

For more information, please contact your nearest World Scientific office: USA office: 27 Warren Street, Suit 401-402 Hackensack, NJ 07601, USA Toll-free Fax: 1 888 977 2665 Toll-free Tel: 1 800 227 of Illinois at Urbana-Champaign, USA E-mail: berndt@math.uiuc.edu Dipendra Prasad School of Mathematics Tata

Waldschmidt, Michel

464

A New Species of an Enigmatic Fossil Taxon: Ischadites n. sp., a Middle Ordovician Receptaculitid From the Great Basin, Western USA  

E-Print Network (OSTI)

Limestone, Central Nevada, USA: Carbonates and Evaporites,Basin Ranges of Western U.S.A. , p. 167-185, in P.D.Range, Clark County, Nevada, USA. : Bulletin du Centre de

Henry, Sara Elizabeth

2014-01-01T23:59:59.000Z

465

A shallow subsurface controlled release facility in Bozeman, Montana, USA, for testing near surface CO2 detection techniques and transport models  

E-Print Network (OSTI)

facility in Bozeman, Montana, USA, for testing near surfaceBozeman, MT 59717, USA e-mail: spangler@montana.edu K. S.Bozeman, MT 59717, USA A. B. Cunningham Department of Civil

2010-01-01T23:59:59.000Z

466

A shallow subsurface controlled release facility in Bozeman, Montana, USA, for testing near surface CO2 detection techniques and transport models  

E-Print Network (OSTI)

facility in Bozeman, Montana, USA, for testing near surfaceBozeman, MT 59717, USA, e-mail: spangler@montana.edu, Tel. :Bozeman, MT 59717, USA A. B. Cunningham Department of Civil

Benson, S.

2010-01-01T23:59:59.000Z

467

The impact of over 100years of wildfires on mercury levels and accumulation rates in two lakes in southern California, USA  

E-Print Network (OSTI)

in southern California, USA Sarah E. Rothenberg Matthew E.In southern California, USA, wild?res may be an importantCA 90095-1772, USA e-mail: rothenberg.sarah@gmail.com R. F.

2010-01-01T23:59:59.000Z

468

Uranium 238U/235U isotope ratios as indicators of reduction: Results from an in situ biostimulation experiment at Rifle, Colorado, USA  

E-Print Network (OSTI)

Experiment at Rifle, Colorado, U.S.A. Charles John Bopp IV*,Site in Rifle, Colorado (USA). An array of monitoring anda U mill at Rifle, Colorado (USA). The experiments at this

Bopp IV, C.J.

2010-01-01T23:59:59.000Z

469

Future Perspectives in melanoma research: Meeting report from the "Melanoma Research: a bridge Naples-USA. Naples, December 6th-7th 2010".  

E-Print Network (OSTI)

Research: a bridge Naples-USA. Naples, December 6 th -7 thResearch: a bridge Naples-USA. Naples, December 6 th -7 thResearch: a bridge Naples-USA. Naples, December 6 th -7 th

2011-01-01T23:59:59.000Z

470

The evolution of Ga and As core levels in the formation of Fe/GaAs (001):A high resolution soft x-ray photoelectron spectroscopic study  

SciTech Connect

A high resolution soft x-ray photoelectron spectroscopic study of Ga and As 3d core levels has been conducted for Fe/GaAs (001) as a function of Fe thickness. This work has provided unambiguous evidence of substrate disrupting chemical reactions induced by the Fe overlayer--a quantitative analysis of the acquired spectra indicates significantly differing behavior of Ga and As during Fe growth, and our observations have been compared with existing theoretical models. Our results demonstrate that the outdiffusing Ga and As remain largely confined to the interface region, forming a thin intermixed layer. Whereas at low coverages Fe has little influence on the underlying GaAs substrate, the onset of substrate disruption when the Fe thickness reaches 3.5 Angstrom results in major changes in the energy distribution curves (EDCs) of both As and Ga 3d cores. Our quantitative analysis suggests the presence of two additional As environments of metallic character: one bound to the interfacial region and another which, as confirmed by in situ oxidation experiments, surface segregates and persists over a wide range of overlayer thickness. Analysis of the corresponding Ga 3d EDCs found not two, but three additional environments--also metallic in nature. Two of the three are interface resident whereas the third undergoes outdiffusion at low Fe coverages. Based on the variations of the integrated intensities of each component, we present a schematic of the proposed chemical makeup of the Fe/GaAs (001) system.

Thompson, Jamie; Neal, James; Shen, Tiehan; Morton, Simon; Tobin, James; Waddill, George Dan; Matthew, Jim; Greig, Denis; Hopkinson, Mark

2008-07-14T23:59:59.000Z

471

Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers  

Science Journals Connector (OSTI)

We investigate spectra of InGaN/GaN quantum well (QW) light-emitting diode (LED) structures with heavily doped barriers at different excitation levels. We model the spectral shape and energy position in frames of dominating mechanism of free electron ... Keywords: Band filling, Doped barriers, Emission spectra, Quantum well

B. Arnaudov; D. S. Domanevskii; S. Evtimova; Ch. Ivanov; R. Kakanakov

2009-02-01T23:59:59.000Z

472

Effects of internal fields on deep-level emission in InGaN/GaN quantum-well light-emitting diodes  

Science Journals Connector (OSTI)

We report on the important role played by internal quantum well (QW) fields in the anomalous inversion of capacitance transients in InGaN/GaN multi-QW light-emitting diodes (LEDs). This effect was observed by deep-level transient spectroscopy (DLTS) ... Keywords: Deep level, III-Nitride, Internal fields, Quantum well

L. Rigutti; A. Castaldini; A. Cavallini

2009-02-01T23:59:59.000Z

473

Light output enhancement of InGaN/GaN light-emitting diodes with contrasting indium tin-oxide nanopatterned structures  

Science Journals Connector (OSTI)

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square ...

Sang Hyun Jung; Keun Man Song; Young Su Choi; Hyeong-Ho Park; Hyun-Beom Shin; Ho Kwan Kang; Jaejin Lee

2013-01-01T23:59:59.000Z

474

Direct and indirect exciton states in GaAs-(Ga, Al)As double quantum wells under crossed electric and magnetic fields  

Science Journals Connector (OSTI)

A theoretical study of the direct and indirect exciton states in GaAs/Ga1-xAlxAs coupled double quantum wells under crossed electric and magnetic fields is presented. The setup of the system under consideration consists of an ... Keywords: 71.55.Eq, 73.20.Mf, 73.21.Fg, Diamagnetic shifts, Double quantum-wells, Magnetoexcitons

L. E. Oliveira; M. de Dios-Leyva; C. A. Duque

2008-03-01T23:59:59.000Z

475

Exciton diamagnetic shift in GaAs/Ga1-xAlxAs quantum wells under in-plane magnetic fields  

Science Journals Connector (OSTI)

Using a variational procedure in the effective-mass and parabolic-band approximations we investigate the effects of in-plane magnetic fields on the exciton states in single GaAs/Ga1-xAlxAs quantum wells. Exciton properties ... Keywords: 71.55.Eq, 73.20.Mf, 73.21.Fg, Diamagnetic shifts, Magnetoexcitons, Quantum wells

C. A. Duque; M. de Dios-Leyva; L. E. Oliveira

2008-03-01T23:59:59.000Z

476

Determination of70Ge(n,p)70Ga and74Ge(n,p)74Ga reaction cross sections for a fission neutron spectrum  

Science Journals Connector (OSTI)

The fission neutron spectrum averaged cross-sections for the reactions70Ge(n,p)70Ga and74Ge(n,p)74Ga have been determined. The averages of four determinations are, respectively, (3.100.30) mb and (0.009380.0005...

I. M. Cohen; A. J. Kestelman; J. C. Furnari

1996-03-14T23:59:59.000Z

477

Toughening and asymmetry in peeling of heterogeneous adhesives Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0405, USA  

E-Print Network (OSTI)

at the macroscale. Our study reveals three elementary mechanisms in heterogeneous systems involving front force resulting in dramatically en- hanced resistance to peeling; (ii) optimized arrangements of pinning sites with large adhesion energy are shown to control the effective system resistance, allowing

478

Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate  

SciTech Connect

Simultaneous growth of ?111?{sub B} free-standing and [110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy (111){sub B} interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain (111){sub B} interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side (111){sub B} interfaces with the surrounding GaAs(P) material during the lateral nanowire growth.

Sun, Wen; Xu, Hongyi [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia)] [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Guo, Yanan [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Gao, Qiang; Hoe Tan, Hark; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)] [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Zou, Jin, E-mail: j.zou@uq.edu.au [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia QLD 4072 (Australia)

2013-11-25T23:59:59.000Z

479

17th ASME Conference on Information Storage and Processing Systems at Santa Clara University, Santa Clara, CA, USA  

E-Print Network (OSTI)

University, Santa Clara, CA, USA R. A. de Callafon F. E.University, Santa Clara, CA, USA on June 18 and 19, 2007. ToLa Jolla, CA 92093-0411, USA e-mail: callafon@ucsd.edu F. E.

Callafon, R. A.; Talke, F. E.

2009-01-01T23:59:59.000Z

480

Policy Analysis of Supply Chains for Asia USA Containerized Imports Robert C. Leachman and Evan T. Davidson  

E-Print Network (OSTI)

1 Policy Analysis of Supply Chains for Asia ­ USA Containerized Imports Robert C. Leachman and Evan from Asia to the United States. We describe the results of an optimization analysis of the Asia ­ USA. In the case of infrastructure used for handling Asia ­ USA imports, the impacts are nation

Kammen, Daniel M.

Note: This page contains sample records for the topic "athens ga usa" from the National Library of EnergyBeta (NLEBeta).
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481

PE2-7 Small animal PET imaging Michael A. Miller and Gary D. Hutchins (Indianapolis, USA)  

E-Print Network (OSTI)

27 PE2-7 Small animal PET imaging Michael A. Miller and Gary D. Hutchins (Indianapolis, USA) May 21, USA) May 23 8:30-10:00 RoomA+B, 10/F Meet the history Chair: Koji Abe (Okayama, Japan), James Mc Michael A. Moskowitz (Boston, USA) MH-7 Takaaki Kirino (Tokyo, Japan) MH-8 Nicolas G. Bazan (New Orleans

482

Dynamic Model of Hydrogen in GaN  

NLE Websites -- All DOE Office Websites (Extended Search)

Dynamic Model of Hydrogen in GaN by S. M. Myers and A. F. Wright Motivation-Hydrogen is incorporated into p-type GaN during MOCVD growth, producing highly stable passivation of the Mg acceptors. Complete acceptor activation by thermal H release requires temperatures that threaten material integrity, prompting compromises in device processing. At lower temperatures, forward bias of p-n junctions or electron-beam irradiation produces a metastable, reversible activation without H release. To understand and control such effects, we are developing a mathematical model of H behavior wherein state energies from density-functional theory are employed in diffusion-reaction equations. Previously, we used the greatly simplifying assumptions of local equilibrium among states

483

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy  

SciTech Connect

Dilute nitride GaNAsP thin films were grown via a GaAsP metamorphic buffer on GaP(100) substrate with gas-source molecular beam epitaxy. The compositions of this III-V-V-V compound were determined by channeling Rutherford backscattering spectroscopy and nuclear reaction analysis. Photoreflectance shows two distinctive transitions from the valence band to the split conduction bands due to N incorporation. Photoluminescence and optical absorption show the fundamental bandgap of Ga(N)AsP is largely tailored by the small amount of N. The observed multiband characteristics and the bandgap tunability of GaNAsP are two merits that fit into the intermediate-band solar cell roadmap, and GaNAsP of high crystal quality provides a strong candidate for intermediate band solar cell materials.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Yu, K. M.; Walukiewicz, W. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)] [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kudrawiec, R. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland); Luce, A. V. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Ting, M. [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)] [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2013-03-18T23:59:59.000Z

484

Ga configurations in hydrogenated amorphous silicon as studied by x-ray photoemission spectroscopy  

Science Journals Connector (OSTI)

Samples of crystalline silicon and glow-discharge-deposited hydrogenated amorphous silicon were doped with gallium by low-energy (4-keV) ion implantation. X-ray photoemission spectroscopy was used to study the chemical-bonding states of the Ga. From Ga 3d core-level studies, we found that elementary interstitial, threefold-coordinated, and fourfold-coordinated Ga coexist in the ion-implanted and annealed amorphous silicon network. The percentage of activated threefold- and fourfold-coordinated Ga atoms is found to increase with increasing annealing temperature, prior to crystallization. The energy released by the amorphous silicon lattice upon annealing contributes to the activation of the gallium from the elementary state to the threefold- or fourfold-coordinated state. No evidence of Ga-H bond formation is found. The percentage of fourfold-coordinated Ga, which we call the doping efficiency, ranges from 5% to 10%, depending upon the thermal treatment.

Z. H. Lu; S. Poulin-Dandurand; E. Sacher; A. Yelon

1990-09-15T23:59:59.000Z

485

Accurate characterization and improvement of GaAs microstrip attenuation  

E-Print Network (OSTI)

Mason Carroll, B. S. , Rose-Hulman Institute of Technology Chair of Advisory Committee: Dr. Kai Chang Microstrip transmission lines are widely used in microv, ave circuits. The high frequencies cause the microstrip characteristics, especially... OF CONTENTS . . LIST OF FIGURES LIST OF TABLES. . CHAPTER I INTRODUCTION . . I. A Introduction. I. B Thesis Research Il GaAs MICROSTRlp ATTENUATION . II. A Characterization ol'Transmission Line Attenuation. . . . II. A. I Introduction. II. A. 2...

Carroll, James Mason

2012-06-07T23:59:59.000Z

486

InGaAsSb thermophotovoltaic diode physics evaluation  

SciTech Connect

The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

1998-06-01T23:59:59.000Z

487

(22) reconstructions of the {111} polar surfaces of GaAs  

Science Journals Connector (OSTI)

Ab initio total-energy calculations were used to examine (22) reconstruction models for the (111) and (111) surfaces of GaAs. For the (111) surface the lowest-energy Ga-vacancy geometry is determined; several mechanisms for Ga-vacancy formation are examined and other reconstructions are discussed. For the (111) surface it is shown that the As-vacancy model is unlikely and other geometries are considered.

E. Kaxiras; Y. Bar-Yam; J. D. Joannopoulos; K. C. Pandey

1986-03-15T23:59:59.000Z

488

Synthesis and Structure of Sr3GaN3 and Sr6GaN5:? Strontium Gallium Nitrides with Isolated Planar [GaN3]6- Anions  

Science Journals Connector (OSTI)

Synthesis and Structure of Sr3GaN3 and Sr6GaN5:? Strontium Gallium Nitrides with Isolated Planar [GaN3]6- Anions ... 9-19 In most cases, an alkaline earth metal is introduced into a Na melt to enhance the solubility of nitrogen, and is incorporated in the nitride product. ... The container was sealed by welding its open end in an argon atmosphere with active water-cooling so that NaN3 did not decompose due to heating during the welding. ...

Dong Gon Park; Zoltn A. Gl; Francis J. DiSalvo

2003-02-13T23:59:59.000Z

489

Ga[sub 13], Al[sub 13], GaAl[sub 12], and chromium-pillared montmorillonites: Acidity and reactivity for cumene conversion  

SciTech Connect

A comparison has been made of the acidic characters of a series of metal polyoxocation pillar interlayered clay minerals (M-PILCs) by studying the infrared spectra of adsorbed pyridine. These comparisons were made for Ga[sub 13]-, Al[sub 13]- and GaAl[sub 12]-PILCs, and for Na[sup +]-exchanged montmorillonite (Na-STx-1). The Ga[sub 13]-PILC, was found to exhibit the strongest Lewis acid sites, followed by the AL[sub 13]-, and GaAl[sub 12]-PILCs and then by the Ns-STx-1. The relative number of Lewis acid sites, however, was found to be much greater for the GaAl[sub 12]-PILC, particularly after calcination at higher temperatures, indicating that the Ga[sub 13] Lewis acid sites did not have as high a thermal stability. The Broensted acidic characters for the pillared clays depend on the pillar, and follow the general decreasing order of abundance of GaAl[sub 12]-, Al[sub 13], and Ga[sub 13]-PILC when expressed as absorbance per unit mass. When the acidities per unit surface area were estimated, however, the Ga[sub 13]-PILCs were found to have the greatest number. This indicated that while the pillars contribute to the PILC acidities primarily through increasing the exposed phyllosilicate sheet surface areas, there is also a significant effect arising from the acidic characters of the pillars themselves. The dehydrogenation activities of Ga[sub 13]-, GaAl[sub 12]-, Al[sub 13]-, and Na-STx-1, in addition to a chromium polyoxocation-PILC, were compared by observing the products formed upon reaction with the model compound cumene. The Ga[sub 13]- and chromium-PILCs and the Na-Stx-1 exhibited almost exclusively dehydrogenation activities, whereas the Al[sub 13]- and GaAl[sub 12]-PILCs exhibited both cracking and dehydrogenation behaviors. These results prove that the pillars themselves can very strongly effect the catalytic activities of the PILCs. 3 refs., 6 figs., 2 tabs.

Bradley, S.M.; Kydd, R.A. (Univ. of Calgary, Alberta (Canada))

1993-05-01T23:59:59.000Z

490

Carrier-induced change in refractive index of InP, GaAs, and InGaAsP  

SciTech Connect

The authors have theoretically estimated the change in refractive index {Delta}{ital n} produced by injection of free carriers in InP, GaAs, and InGaAsP. Bandfilling (Burstein-Moss effect), band-gap shrinkage, and free-carrier absorption (plasma effect) were included. Carrier concentrations of 10{sup 16}/cm{sup 3} to 10{sup 19}/cm{sup 3} and photon energies of 0.8 to 2.0 eV were considered. Predictions of {Delta}{ital n} are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as 10{sup {minus} 2} are predicted for carrier concentrations of 10{sup 18}/cm{sup 3}, suggesting that low-loss optical phase modulators and switches using carrier injection are feasible in these materials.

Bennett, B.R. (Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA (US)); Soref, R.A. (Solid State Sciences Directorate, Rome Air Development Center, Hanscom Air Force Base, Bedford, MA (US)); Del Alamo, J.A. (Dept. of Electrical Engineering and Computer Science, Massachussets Institute of Technology, Cambridge, MA (US))

1990-01-01T23:59:59.000Z

491

Photoluminescence kinetics of indirect excitons in GaAs/AlxGa1-xAs coupled quantum wells  

Science Journals Connector (OSTI)

Photoluminescence (PL) kinetics of long-lifetime indirect excitons in a GaAs/AlxGa1-xAs coupled quantum well characterized by a small in-plane random potential was studied at temperatures 1.5<~T<~15 K for a wide range of exciton densities. Strong deviations of the indirect exciton PL kinetics from monoexponential PL rise/decay were observed at low temperatures and high exciton densities. In particular, right after the excitation is switched off, the spectrally integrated indirect exciton PL intensity increased sharply. Simultaneously, the indirect exciton energy distribution was observed to narrow significantly. The observed increase in intensity is attributed to the sharp increase of occupation of the optically active exciton states. The energy distribution narrowing is explained in terms of the phonon mediated exciton energy relaxation in momentum space and in the in-plane random potential.

L. V. Butov, A. Imamoglu, A. V. Mintsev, K. L. Campman, and A. C. Gossard

1999-01-15T23:59:59.000Z

492

Sensitivity of absorption spectra to surface segregation in InGaN/GaN quantum well structures  

SciTech Connect

We investigate the influence of the indium surface segregation on absorption spectra in InGaN/GaN quantum well structures having different indium amount. Results of the mathematical modeling show that such influence is more pronounced in quantum well structures with high indium amounts. The origin of this effect is related to the interplay between the indium surface segregation and internal electrostatic fields. Our theoretical analysis is performed using semiconductor Bloch equations within the Hartree-Fock approximation including into consideration excitonic effects. Results of the global sensitivity analysis evidence that the influence of the indium surface segregation is less than one order of magnitude in comparison with the impact of the quantum-well width and indium molar fraction. Also, the influence of the indium surface segregation is not the same for each interface of the quantum well.

Klymenko, M. V.; Shulika, O. V. [Lab. Photonics, Kharkov National University of Radio Electronics, Kharkov, 61166 (Ukraine); Sukhoivanov, I. A. [Department of Electronics, Engineering Division, University of Guanajuato, Salamanca, Guanajuato, 36885 (Mexico)

2014-05-15T23:59:59.000Z

493

Band offsets from two special GaAs-AlxGa1-xAs quantum-well structures  

Science Journals Connector (OSTI)

Half-parabolic quantum wells and two-stepped quantum wells have been grown by molecular-beam epitaxy with the GaAs-AlxGa1-xAs system and investigated by photoluminescence techniques to determine the band offsets at the heterointerfaces. Both structures provide interband transitions that are sensitive to the partitioning of the energy-gap discontinuity ?Eg=?Ec+?Ev between the conduction and valence bands. It is concluded that the data require valence-band offsets ?Ev equal to 38% and 41% of ?Eg for the half-parabolic wells and the two-stepped wells, respectively. These band offsets are therefore in agreement with the trend of other recent determinations.

R. C. Miller; A. C. Gossard; D. A. Kleinman

1985-10-15T23:59:59.000Z

494

ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures  

SciTech Connect

Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generated defects. The irradiation with up to 90 pulses at 65-150 mJ/cm{sup 2} allowed to generate an array of 1.2x1 mm{sup 2} sites of QW intermixed material, with bandgap energy blueshifted up to 107 nm. We discuss the mechanism and advantages of this approach for postgrowth wafer level fabrication of multibandgap QW material.

Genest, Jonathan; Beal, Romain; Aimez, Vincent; Dubowski, Jan J. [Department of Electrical and Computer Engineering, Center of Excellence for Information Engineering, Universite de Sherbrooke, Sherbrooke, Quebec J1K 2R1 (Canada)

2008-08-18T23:59:59.000Z

495

E-Print Network 3.0 - algorithm ga technique Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

for: algorithm ga technique Page: << < 1 2 3 4 5 > >> 1 GAMMA: Global Arrays Meets MATLAB Rajkiran Panuganti Summary: is a straightforward implementa- tion of a standard...

496

Band-structure analysis from photoreflectance spectroscopy in (Ga,Mn)As  

SciTech Connect

Modulation photoreflectance spectroscopy has been applied to study the band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn content. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap-transition energy in the (Ga,Mn)As layers with increasing Mn content are interpreted in terms of a disordered valence band, extended within the band gap, formed, in highly Mn-doped (Ga,Mn)As, as a result of merging the Mn-related impurity band with the host GaAs valence band.

Yastrubchak, Oksana; Gluba, Lukasz; Zuk, Jerzy [Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin (Poland); Wosinski, Tadeusz; Andrearczyk, Tomasz; Domagala, Jaroslaw Z. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Sadowski, Janusz [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland and MAX-Lab, Lund University, 22100 Lund (Sweden)

2013-12-04T23:59:59.000Z

497

Assessment of the Passivation Capabilities of Two Different Covalent Chemical Modifications on GaP(100)  

Science Journals Connector (OSTI)

With respect to toxicity, the UDA-functionalized GaP provided better passivation which was confirmed by less gallium leaching into water and saline solutions. ... Due to its promising characteristics for device fabrication, gallium arsenide (GaAs) has been extensively studied and the formation of self-assembled monolayers has been of interest. ... A general increase in the Ga/P ratio can be seen in the surfaces exposed to solutions compared to the clean surface which is attributed to the greater solubility of the phosphorus oxide (P2O5) compared to the gallium oxide (Ga2O3). ...

David Richards; Dmitry Zemlyanov; Albena Ivanisevic

2010-02-03T23:59:59.000Z

498

Interface Reactions and Electrical Characteristics of Au/GaSb Contacts  

SciTech Connect

The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{sub 2} compound and several Au-Ga phases are produced. Phase transitions occur toward higher Ga concentration with increasing annealing temperatures. Furthermore, the depth of the contact also increases with increased annealing temperature. They found that the AuSb{sub 2} compound forms on the GaSb surface, with the compound crystal partially ordered with respect to the substrate. The transition of Schottky- to ohmic-contact behavior in Au/n-type GaSb occurs simultaneously with the formation of the AuGa compound at about a 250 C annealing temperature. This ohmic contact forms without the segregation of dopants at the metallic compound/GaSb interface. Therefore it is postulated that transition from Schottky- to ohmic-contact behavior is obtained through a series of tunneling transitions of electrons through defects in the depletion region in the Au/n-type GaSb contacts. Contact resistivities of 6-7 x 10{sup -6} {Omega}-cm{sup 2} were obtained with the annealing temperature between 300 and 350 C for 30 seconds. In Au/p-type GaSb contacts, the resistivity was independent of the annealing temperature. This suggested that the carrier transport in p-type contact dominated by thermionic emission.

H. Ehsani; R.J. Gutmann; G.W. Charache

2000-07-07T23:59:59.000Z

499

Si in GaN -- On the nature of the background donor  

SciTech Connect

A characterization of the Si impurity in GaN is performed by Raman spectroscopy. Applying hydrostatic pressure up to 25 GPa the authors study the behavior of the LO phonon-plasmon mode in a series of high mobility Si doped GaN films. In contrast to earlier results on unintentionally doped bulk GaN crystals no freeze out of the free carriers could be observed in Si doped samples. The authors find that Si is a shallow hydrogenic donor throughout the pressure range studied. This result positively excludes Si incorporation as a dominant source of free electrons in previously studied bulk GaN samples.

Wetzel, C.; Chen, A.L.; Suski, T.; Ager, J.W. III; Walukiewicz, W. [Lawrence Berkeley National Lab., CA (United States). Materials Science Div.

1996-08-01T23:59:59.000Z

500

Structural defects in GaN revealed by Transmission Electron Microscopy  

SciTech Connect

This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

Liliental-Weber, Zuzanna

2014-04-18T23:59:59.000Z