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  1. LAKESHORE AVON BR ANT-EDEN ALD EN-LANC ASTER AU BURN W SH ELDON

    U.S. Energy Information Administration (EIA) Indexed Site

    81 81 LAKESHORE AVON BR ANT-EDEN ALD EN-LANC ASTER AU BURN W SH ELDON CALEDONIA HURON C REEK LEIC EST ER COL DEN ASH FORD INDIAN FALLS LAWTONS SAR DINIA RPD-037 -2 ...

  2. LAKESHORE AVON BR ANT-EDEN ALD EN-LANC ASTER AU BURN W SH ELDON

    U.S. Energy Information Administration (EIA) Indexed Site

    81 § ¨ ¦ 81 LAKESHORE AVON BR ANT-EDEN ALD EN-LANC ASTER AU BURN W SH ELDON CALEDONIA HURON C REEK LEIC EST ER COL DEN ASH FORD INDIAN FALLS LAWTONS SAR DINIA RPD-037 -2 GLENWOOD PU LASKI PAVILION CON CORD COL LINS N ELM A ORC HARD PARK-H AMBU RG DANLEY CORNERS ST ILLWAT ER CHAFF EE-ARCAD E FAYETT E-WATERLOO LAKEVIEW JAVA SEN EC A W ELLER Y AU RORA E ZOAR BU FFALO TIOGA SILVER LAKE AKR ON ROM E RAT HBON E ALM A BET HANY WYOMING ULYSSES BR ANCH W SAN DY CREEK COL LINS BLOOMFIELD E LEBANON

  3. LAKESHORE AVON BR ANT-EDEN ALD EN-LANC ASTER AU BURN W SH ELDON

    U.S. Energy Information Administration (EIA) Indexed Site

    BOE Reserve Class No 2001 reserves 0.1 - 10 MBOE 10.1 - 100 MBOE 100.1 - 1000 MBOE 1000.1 - 10,000 MBOE 10,000.1 - 100,000 MBOE > 100,000 MBOE Appalachian Basin Boundary C a n a d a N Y P A N Y U S A Appalachian Basin, NY Area (Panel 1 of 7) Oil and Gas Fields By 2001 BOE

  4. LAKESHORE AVON BR ANT-EDEN ALD EN-LANC ASTER AU BURN W SH ELDON

    U.S. Energy Information Administration (EIA) Indexed Site

    Liquids Reserve Class No 2001 Liiquids Reserves 0.1 - 10 Mbbl 10.1 - 100 Mbbl 100.1 - 1000 Mbbl 1000.1 - 10,000 Mbbl Appalachian Basin Boundary C a n a d a N Y P A N Y U S A Appalachian Basin, NY Area (Panel 1 of 7) Oil and Gas Fields By 2001 Liquids

  5. LAKESHORE AVON BR ANT-EDEN ALD EN-LANC ASTER AU BURN W SH ELDON

    U.S. Energy Information Administration (EIA) Indexed Site

    Liquids Reserve Class No 2001 Liiquids Reserves 0.1 - 10 Mbbl 10.1 - 100 Mbbl 100.1 - 1000 Mbbl 1000.1 - 10,000 Mbbl Appalachian Basin Boundary C a n a d a N Y P A N Y U S A ...

  6. LAKESHORE AVON BR ANT-EDEN ALD EN-LANC ASTER AU BURN W SH ELDON

    U.S. Energy Information Administration (EIA) Indexed Site

    BOE Reserve Class No 2001 reserves 0.1 - 10 MBOE 10.1 - 100 MBOE 100.1 - 1000 MBOE 1000.1 - 10,000 MBOE 10,000.1 - 100,000 MBOE > 100,000 MBOE Appalachian Basin Boundary C a n a d ...

  7. ASTER | Open Energy Information

    Open Energy Info (EERE)

    ASTER Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Spectral Imaging Sensor: Advanced Spaceborne Thermal Emission and Reflection Radiometer (ASTER) Details Areas (0...

  8. ALD Nanosolutions | Open Energy Information

    Open Energy Info (EERE)

    ALD Nanosolutions was selected as one of 8 companies to receive a small business innovation grant from the U.S. Department of Energy. They received 150,00 for development of a...

  9. Tir (Aster) Geothermal Anomalies | Open Energy Information

    Open Energy Info (EERE)

    Emission and Reflection Radiometer (ASTER) to map shallow thermal anomalies. Kinetic temperature images derived from ASTER TIR data can be used to detect potential anomalies,...

  10. ASTER Thermal Anomalies in western Colorado

    SciTech Connect (OSTI)

    Zehner, Richard E.

    2013-01-01

    Citation Information: Originator: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Publication Date: 2012 Title: ASTER Thermal Anomalies Western Edition: First Publication Information: Publication Place: Earth Science & Observation Center, Cooperative Institute for Research in Environmental Science (CIRES), University of Colorado, Boulder Publisher: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Description: This layer contains the areas identified as areas of anomalous surface temperature from ASTER satellite imagery. The temperature is calculated using the Emissivity Normalization Algorithm that separate temperature from emissivity. Areas that had temperature greater than 2σ, and areas with temperature equal to 1σ to 2σ, were considered ASTER modeled very warm and warm surface exposures (thermal anomalies), respectively Spatial Domain: Extent: Top: 4547052.446651 m Left: 158917.090117 m Right: 4101162.228281 m Bottom: 4101162.228281 m Contact Information: Contact Organization: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Contact Person: Khalid Hussein Address: CIRES, Ekeley Building Earth Science & Observation Center (ESOC) 216 UCB City: Boulder State: CO Postal Code: 80309-0216 Country: USA Contact Telephone: 303-492-6782 Spatial Reference Information: Coordinate System: Universal Transverse Mercator (UTM) WGS’1984 Zone 13N False Easting: 500000.00000000 False Northing: 0.00000000 Central Meridian: -105.00000000 Scale Factor: 0.99960000 Latitude of Origin: 0.00000000 Linear Unit: Meter Datum: World Geodetic System ’1984 (WGS ’1984) Prime Meridian: Greenwich Angular Unit: Degree Digital Form: Format Name: Shape file

  11. Remote Detection of Quaternary Borate Deposits with ASTER Satellite...

    Open Energy Info (EERE)

    Deposits with ASTER Satellite Imagery as a Geothermal Exploration Tool Abstract In the Great Basin of the western United States, geothermal fluids are sometimes associated with...

  12. Impact of ALD Coating on Mn-rich Cathode Materials (Presentation)

    SciTech Connect (OSTI)

    Santhanagopalan, S.

    2013-06-01

    LG Chem Power Inc. (LGCPI) and NREL have collaborated to demonstrate the scalability of the atomic layer deposition (ALD) coating process over the last 6 months, and the benefits of ALD coatings for long-term cycling and calendar life are being quantified. The objectives of this work are two-fold: 1) to evaluate the scalability of the process to coat LGCPI cathodes with alumina using the ALD technique, and 2) to demonstrate improvements in rate capability and life of ALD-coated LGCPI electrodes. NREL received samples of baseline material to be coated from LGCPI. NREL carried out ALD coating of the samples with help from a subcontractor, ALD Nanosolutions. NREL fabricated cells from those samples for quick screening and feedback to ALD Nanosolutions. LGCPI is currently fabricating larger-format cells for further evaluation.

  13. Magnetic manipulation of self-assembled colloidal asters.

    SciTech Connect (OSTI)

    Snezhko, A.; Aranson, I. S.

    2011-09-01

    Self-assembled materials must actively consume energy and remain out of equilibrium to support structural complexity and functional diversity. Here we show that a magnetic colloidal suspension confined at the interface between two immiscible liquids and energized by an alternating magnetic field dynamically self-assembles into localized asters and arrays of asters, which exhibit locomotion and shape change. By controlling a small external magnetic field applied parallel to the interface, we show that asters can capture, transport, and position target microparticles. The ability to manipulate colloidal structures is crucial for the further development of self-assembled microrobots

  14. Final Report: Novel ALD-Coated Nanoparticle Anodes for Enhanced Performance Lithium-Ion Batteries

    SciTech Connect (OSTI)

    Groner, Markus

    2009-04-16

    The Phase I effort is described in detail in the Phase I report given below. The key accomplishments of the Phase I project were (1) the demonstration of high stability LiCoO2 cathodes using ALD-coated LiCoO2 particles, as well as on ALD-coated LiCoO2 electrodes and (2) the demonstration of high stability of graphite anodes using ALD-coated graphite electrodes.

  15. Aster Watches The World'S Volcanoes- A New Paradigm For Volcanological...

    Open Energy Info (EERE)

    The spatial resolutions are 15 mpixel in the visible, 30 mpixel in the near-IR, and 90 mpixel at thermal wavelengths, and the swath width is 60 km. ASTER instrument...

  16. LAMMPS | Argonne Leadership Computing Facility

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BOE Reserve Class No 2001 reserves 0.1 - 10 MBOE 10.1 - 100 MBOE 100.1 - 1000 MBOE 1000.1 - 10,000 MBOE 10,000.1 - 100,000 MBOE > 100,000 MBOE Appalachian Basin Boundary C a n a d a N Y P A N Y U S A Appalachian Basin, NY Area (Panel 1 of 7) Oil and Gas Fields By 2001 BOE

    81 § ¨ ¦ 81 LAKESHORE AVON BR ANT-EDEN ALD EN-LANC ASTER AU BURN W SH ELDON CALEDONIA HURON C REEK LEIC EST ER COL DEN ASH FORD INDIAN FALLS LAWTONS SAR DINIA RPD-037 -2 GLENWOOD PU LASKI PAVILION CON CORD COL LINS N

  17. ALD Functionalized Nanoporous Gold: Thermal Stability, Mechanical Properties, and Catalytic Activity

    SciTech Connect (OSTI)

    Biener, M M; Biener, J; Wichmann, A; Wittstock, A; Baumann, T F; Baeumer, M; Hamza, A V

    2011-03-24

    Nanoporous metals have many technologically promising applications but their tendency to coarsen limits their long-term stability and excludes high temperature applications. Here, we demonstrate that atomic layer deposition (ALD) can be used to stabilize and functionalize nanoporous metals. Specifically, we studied the effect of nanometer-thick alumina and titania ALD films on thermal stability, mechanical properties, and catalytic activity of nanoporous gold (np-Au). Our results demonstrate that even only one-nm-thick oxide films can stabilize the nanoscale morphology of np-Au up to 1000 C, while simultaneously making the material stronger and stiffer. The catalytic activity of np-Au can be drastically increased by TiO{sub 2} ALD coatings. Our results open the door to high temperature sensor, actuator, and catalysis applications and functionalized electrodes for energy storage and harvesting applications.

  18. ALD of Al2O3 for Highly Improved Performance in Li-Ion Batteries

    SciTech Connect (OSTI)

    Dillon, A.; Jung, Y. S.; Ban, C.; Riley, L.; Cavanagh, A.; Yan, Y.; George, S.; Lee, S. H.

    2012-01-01

    Significant advances in energy density, rate capability and safety will be required for the implementation of Li-ion batteries in next generation electric vehicles. We have demonstrated atomic layer deposition (ALD) as a promising method to enable superior cycling performance for a vast variety of battery electrodes. The electrodes range from already demonstrated commercial technologies (cycled under extreme conditions) to new materials that could eventually lead to batteries with higher energy densities. For example, an Al2O3 ALD coating with a thickness of ~ 8 A was able to stabilize the cycling of unexplored MoO3 nanoparticle anodes with a high volume expansion. The ALD coating enabled stable cycling at C/2 with a capacity of ~ 900 mAh/g. Furthermore, rate capability studies showed the ALD-coated electrode maintained a capacity of 600 mAh/g at 5C. For uncoated electrodes it was only possible to observe stable cycling at C/10. Also, we recently reported that a thin ALD Al2O3 coating with a thickness of ~5 A can enable natural graphite (NG) electrodes to exhibit remarkably durable cycling at 50 degrees C. The ALD-coated NG electrodes displayed a 98% capacity retention after 200 charge-discharge cycles. In contrast, bare NG showed a rapid decay. Additionally, Al2O3 ALD films with a thickness of 2 to 4 A have been shown to allow LiCoO2 to exhibit 89% capacity retention after 120 charge-discharge cycles performed up to 4.5 V vs Li/Li+. Bare LiCoO2 rapidly deteriorated in the first few cycles. The capacity fade is likely caused by oxidative decomposition of the electrolyte at higher potentials or perhaps cobalt dissolution. Interestingly, we have recently fabricated full cells of NG and LiCoO2 where we coated both electrodes, one or the other electrode as well as neither electrode. In creating these full cells, we observed some surprising results that lead us to obtain a greater understanding of the ALD coatings. We have also recently coated a binder free LiNi0.04Mn0

  19. NOIJLVaiSINIWaV NOIlVlAldOdNI AOU3N3 Z661

    Gasoline and Diesel Fuel Update (EIA)

    61- NOIJLVaiSINIWaV NOIlVlAldOdNI AOU3N3 Z661 This publication and other Energy Information Administration (EIA) publications may be purchased from the Superintendent of Documents, U.S. Government Printing Office. AH telephone orders should be directed to: U.S. Government Printing Office McPherson Square Bookstore 1510 H Street, N.W. Washington, DC 20005 (202)653-2050 FAX (202)376-5055 9 a.m. to 5 p.m., eastern time, M-F All mail orders should be directed to: Superintendent of Documents U.S.

  20. Towards ALD thin film stabilized single-atom Pd 1 catalysts

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Piernavieja-Hermida, Mar; Lu, Zheng; White, Anderson; Low, Ke-Bin; Wu, Tianpin; Elam, Jeffrey W.; Wu, Zili; Lei, Yu

    2016-07-27

    Supported precious metal single-atom catalysts have shown interesting activity and selectivity in recent studies. However, agglomeration of these highly mobile mononuclear surface species can eliminate their unique catalytic properties. In this paper, we study a strategy for synthesizing thin film stabilized single-atom Pd1 catalysts using atomic layer deposition (ALD). The thermal stability of the Pd1 catalysts is significantly enhanced by creating a nanocavity thin film structure. In situ infrared spectroscopy and Pd K-edge X-ray absorption spectroscopy (XAS) revealed that the Pd1 was anchored on the surface through chlorine sites. The thin film stabilized Pd1 catalysts were thermally stable under bothmore » oxidation and reduction conditions. The catalytic performance in the methanol decomposition reaction is found to depend on the thickness of protecting layers. While Pd1 catalysts showed promising activity at low temperature in a methanol decomposition reaction, 14 cycle TiO2 protected Pd1 was less active at high temperature. Pd L3 edge XAS indicated that the low reactivity compared with Pd nanoparticles is due to the strong adsorption of carbon monoxide even at 250 °C. Lastly, these results clearly show that the ALD nanocavities provide a basis for future design of single-atom catalysts that are highly efficient and stable.« less

  1. Areas of Anomalous Surface Temperature in Archuleta County, Colorado, as Identified from ASTER Thermal Data

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Hussein, Khalid

    2012-02-01

    Citation Information: Originator: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Publication Date: 2012 Title: Very Warm Modeled Temperature Archuleta Edition: First Publication Information: Publication Place: Earth Science & Observation Center, Cooperative Institute for Research in Environmental Science (CIRES), University of Colorado, Boulder Publisher: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Description: This layer contains areas of anomalous surface temperature in Archuleta County identified from ASTER thermal data and spatial based insolation model. The temperature is calculated using the Emissivity Normalization Algorithm that separate temperature from emissivity. The incoming solar radiation was calculated using spatial based insolation model developed by Fu and Rich (1999). Then the temperature due to solar radiation was calculated using emissivity derived from ASTER data. The residual temperature, i.e. temperature due to solar radiation subtracted from ASTER temperature was used to identify thermally anomalous areas. Areas that had temperature greater than 2σ were considered ASTER modeled very warm surface exposures (thermal anomalies) Spatial Domain: Extent: Top: 4144691.792023 m Left: 285531.662851 m Right: 348694.182686 m Bottom: 4097005.210304 m Contact Information: Contact Organization: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Contact Person: Khalid Hussein Address: CIRES, Ekeley Building Earth Science & Observation Center (ESOC) 216 UCB City: Boulder State: CO Postal Code: 80309-0216 Country: USA Contact Telephone: 303-492-6782 Spatial Reference Information: Coordinate System: Universal Transverse Mercator (UTM) WGS’1984 Zone 13N False Easting: 500000.00000000 False Northing: 0.00000000 Central Meridian: -105.00000000 Scale Factor: 0.99960000 Latitude of Origin: 0.00000000 Linear Unit: Meter Datum: World Geodetic System ’1984

  2. Areas of Anomalous Surface Temperature in Chaffee County, Colorado, as Identified from ASTER Thermal Data

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Hussein, Khalid

    2012-02-01

    Citation Information: Originator: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Publication Date: 2012 Title: Very Warm Modeled Temperature Chaffee Edition: First Publication Information: Publication Place: Earth Science & Observation Center, Cooperative Institute for Research in Environmental Science (CIRES), University of Colorado, Boulder Publisher: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Description: This layer contains areas of anomalous surface temperature in Chaffee County identified from ASTER thermal data and spatial based insolation model. The temperature is calculated using the Emissivity Normalization Algorithm that separate temperature from emissivity. The incoming solar radiation was calculated using spatial based insolation model developed by Fu and Rich (1999). Then the temperature due to solar radiation was calculated using emissivity derived from ASTER data. The residual temperature, i.e. temperature due to solar radiation subtracted from ASTER temperature was used to identify thermally anomalous areas. Areas that had temperature greater than 2σ were considered ASTER modeled very warm surface exposures (thermal anomalies) Spatial Domain: Extent: Top: 4333432.368072 m Left: 366907.700763 m Right: 452457.816015 m Bottom: 4208271.566715 m Contact Information: Contact Organization: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Contact Person: Khalid Hussein Address: CIRES, Ekeley Building Earth Science & Observation Center (ESOC) 216 UCB City: Boulder State: CO Postal Code: 80309-0216 Country: USA Contact Telephone: 303-492-6782 Spatial Reference Information: Coordinate System: Universal Transverse Mercator (UTM) WGS’1984 Zone 13N False Easting: 500000.00000000 False Northing: 0.00000000 Central Meridian: -105.00000000 Scale Factor: 0.99960000 Latitude of Origin: 0.00000000 Linear Unit: Meter Datum: World Geodetic System ’1984 (WGS

  3. Areas of Anomalous Surface Temperature in Garfield County, Colorado, as Identified from ASTER Thermal Data

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Hussein, Khalid

    2012-02-01

    Citation Information: Originator: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Publication Date: 2012 Title: Very Warm Modeled Temperature Garfield Edition: First Publication Information: Publication Place: Earth Science & Observation Center, Cooperative Institute for Research in Environmental Science (CIRES), University of Colorado, Boulder Publisher: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Description: This layer contains areas of anomalous surface temperature in Garfield County identified from ASTER thermal data and spatial based insolation model. The temperature is calculated using the Emissivity Normalization Algorithm that separate temperature from emissivity. The incoming solar radiation was calculated using spatial based insolation model developed by Fu and Rich (1999). Then the temperature due to solar radiation was calculated using emissivity derived from ASTER data. The residual temperature, i.e. temperature due to solar radiation subtracted from ASTER temperature was used to identify thermally anomalous areas. Areas that had temperature greater than 2σ were considered ASTER modeled very warm surface exposures (thermal anomalies) Spatial Domain: Extent: Top: 4441550.552290 m Left: 271445.053363 m Right: 359825.053363 m Bottom: 4312490.552290 m Contact Information: Contact Organization: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Contact Person: Khalid Hussein Address: CIRES, Ekeley Building Earth Science & Observation Center (ESOC) 216 UCB City: Boulder State: CO Postal Code: 80309-0216 Country: USA Contact Telephone: 303-492-6782 Spatial Reference Information: Coordinate System: Universal Transverse Mercator (UTM) WGS’1984 Zone 13N False Easting: 500000.00000000 False Northing: 0.00000000 Central Meridian: -105.00000000 Scale Factor: 0.99960000 Latitude of Origin: 0.00000000 Linear Unit: Meter Datum: World Geodetic System ’1984

  4. Areas of Anomalous Surface Temperature in Dolored County, Colorado, as Identified from ASTER Thermal Data

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Hussein, Khalid

    2012-02-01

    Citation Information: Originator: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Publication Date: 2012 Title: Very Warm Modeled Temperature Dolores Edition: First Publication Information: Publication Place: Earth Science & Observation Center, Cooperative Institute for Research in Environmental Science (CIRES), University of Colorado, Boulder Publisher: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Description: This layer contains areas of anomalous surface temperature in Dolores County identified from ASTER thermal data and spatial based insolation model. The temperature is calculated using the Emissivity Normalization Algorithm that separate temperature from emissivity. The incoming solar radiation was calculated using spatial based insolation model developed by Fu and Rich (1999). Then the temperature due to solar radiation was calculated using emissivity derived from ASTER data. The residual temperature, i.e. temperature due to solar radiation subtracted from ASTER temperature was used to identify thermally anomalous areas. Areas that had temperature greater than 2σ were considered ASTER modeled very warm surface exposures (thermal anomalies) Spatial Domain: Extent: Top: 4186234.213315 m Left: 212558.673056 m Right: 232922.811862 m Bottom: 4176781.467043 m Contact Information: Contact Organization: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Contact Person: Khalid Hussein Address: CIRES, Ekeley Building Earth Science & Observation Center (ESOC) 216 UCB City: Boulder State: CO Postal Code: 80309-0216 Country: USA Contact Telephone: 303-492-6782 Spatial Reference Information: Coordinate System: Universal Transverse Mercator (UTM) WGS’1984 Zone 13N False Easting: 500000.00000000 False Northing: 0.00000000 Central Meridian: -105.00000000 Scale Factor: 0.99960000 Latitude of Origin: 0.00000000 Linear Unit: Meter Datum: World Geodetic System ’1984 (WGS

  5. Areas of Anomalous Surface Temperature in Routt County, Colorado, as Identified from ASTER Thermal Data

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Hussein, Khalid

    2012-02-01

    Citation Information: Originator: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Publication Date: 2012 Title: Very Warm Modeled Temperature Routt Edition: First Publication Information: Publication Place: Earth Science & Observation Center, Cooperative Institute for Research in Environmental Science (CIRES), University of Colorado, Boulder Publisher: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Description: This layer contains areas of anomalous surface temperature in Routt County identified from ASTER thermal data and spatial based insolation model. The temperature is calculated using the Emissivity Normalization Algorithm that separate temperature from emissivity. The incoming solar radiation was calculated using spatial based insolation model developed by Fu and Rich (1999). Then the temperature due to solar radiation was calculated using emissivity derived from ASTER data. The residual temperature, i.e. temperature due to solar radiation subtracted from ASTER temperature was used to identify thermally anomalous areas. Areas that had temperature greater than 2σ were considered ASTER modeled very warm surface exposures (thermal anomalies) Spatial Domain: Extent: Top: 4501071.574000 m Left: 311351.975000 m Right: 359681.975000 m Bottom: 4447251.574000 m Contact Information: Contact Organization: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Contact Person: Khalid Hussein Address: CIRES, Ekeley Building Earth Science & Observation Center (ESOC) 216 UCB City: Boulder State: CO Postal Code: 80309-0216 Country: USA Contact Telephone: 303-492-6782 Spatial Reference Information: Coordinate System: Universal Transverse Mercator (UTM) WGS’1984 Zone 13N False Easting: 500000.00000000 False Northing: 0.00000000 Central Meridian: -105.00000000 Scale Factor: 0.99960000 Latitude of Origin: 0.00000000 Linear Unit: Meter Datum: World Geodetic System ’1984 (WGS

  6. Areas of Anomalous Surface Temperature in Alamosa and Saguache Counties, Colorado, as Identified from ASTER Thermal Data

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Hussein, Khalid

    2012-02-01

    Citation Information: Originator: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Publication Date: 2012 Title: Very Warm Modeled Temperature Alamosa Saguache Edition: First Publication Information: Publication Place: Earth Science & Observation Center, Cooperative Institute for Research in Environmental Science (CIRES), University of Colorado, Boulder Publisher: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Description: This layer contains areas of anomalous surface temperature in Alamosa and Saguache Counties identified from ASTER thermal data and spatial based insolation model. The temperature is calculated using the Emissivity Normalization Algorithm that separate temperature from emissivity. The incoming solar radiation was calculated using spatial based insolation model developed by Fu and Rich (1999). Then the temperature due to solar radiation was calculated using emissivity derived from ASTER data. The residual temperature, i.e. temperature due to solar radiation subtracted from ASTER temperature was used to identify thermally anomalous areas. Areas that had temperature greater than 2σ were considered ASTER modeled very warm surface exposures (thermal anomalies) Spatial Domain: Extent: Top: 4217727.601630 m Left: 394390.400264 m Right: 460179.841813 m Bottom: 4156258.036086 m Contact Information: Contact Organization: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Contact Person: Khalid Hussein Address: CIRES, Ekeley Building Earth Science & Observation Center (ESOC) 216 UCB City: Boulder State: CO Postal Code: 80309-0216 Country: USA Contact Telephone: 303-492-6782 Spatial Reference Information: Coordinate System: Universal Transverse Mercator (UTM) WGS’1984 Zone 13N False Easting: 500000.00000000 False Northing: 0.00000000 Central Meridian: -105.00000000 Scale Factor: 0.99960000 Latitude of Origin: 0.00000000 Linear Unit: Meter Datum: World

  7. Enhancing the stability of copper chromite catalysts for the selective hydrogenation of furfural with ALD overcoating (II) – Comparison between TiO2 and Al2O3 overcoatings

    SciTech Connect (OSTI)

    Zhang, Hongbo; Canlas, Christian; Kropf, A. Jeremy; Elam, Jeffrey W.; Dumesic, James A; Marshall, Christopher L.

    2015-01-01

    TiO2 atomic layer deposition (ALD) overcoatings were applied to copper chromite catalysts to increase the stability for 2-furfuraldehyde (“furfural”) hydrogenation. After overcoating, about 75% activity was preserved compared to neat copper chromite: much higher activity than an alumina ALD overcoated catalyst with a similar number of ALD cycles. The effects of ALD TiO2 on the active Cu nanoparticles were studied extensively using both in-situ TPR/isothermal-oxidation and in-situ furfural hydrogenation via Cu XAFS. The redox properties of Cu were modified only slightly by the TiO2 ALD overcoat. However, a subtle electronic interaction was observed between the TiO2 ALD layers and the Cu nanoparticles. With calcination at 500 °C the interaction between the TiO2 overcoat and the underlying catalyst is strong enough to inhibit migration and site blocking by chromite, but is sufficiently weaker than the interaction between the Al2O3 overcoat and copper chromite that it does not strongly inhibit the catalytic activity of the copper nanoparticles.

  8. Areas of Weakly Anomalous to Anomalous Surface Temperature in Archuleta County, Colorado, as Identified from ASTER Thermal Data

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Hussein, Khalid

    2012-02-01

    Citation Information: Originator: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Publication Date: 2012 Title: Warm Modeled Temperature Archuleta Note: This “Weakly Anomalous to Anomalous Surface Temperature” dataset differs from the “Anomalous Surface Temperature” dataset for this county (another remotely sensed CIRES product) by showing areas of modeled temperatures between 1σ and 2σ above the mean, as opposed to the greater than 2σ temperatures contained in the “Anomalous Surface Temperature” dataset. Edition: First Publication Information: Publication Place: Earth Science & Observation Center, Cooperative Institute for Research in Environmental Science (CIRES), University of Colorado, Boulder Publisher: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Description: This layer contains areas of anomalous surface temperature in Archuleta County identified from ASTER thermal data and spatial based insolation model. The temperature is calculated using the Emissivity Normalization Algorithm that separate temperature from emissivity. The incoming solar radiation was calculated using spatial based insolation model developed by Fu and Rich (1999). Then the temperature due to solar radiation was calculated using emissivity derived from ASTER data. The residual temperature, i.e. temperature due to solar radiation subtracted from ASTER temperature was used to identify thermally anomalous areas. Areas that had temperature between 1σ and 2σ were considered ASTER modeled warm surface exposures (thermal anomalies). Spatial Domain: Extent: Top: 4144825.235807 m Left: 285446.256851 m Right: 350577.338852 m Bottom: 4096962.250137 m Contact Information: Contact Organization: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Contact Person: Khalid Hussein Address: CIRES, Ekeley Building Earth Science & Observation Center (ESOC) 216 UCB City: Boulder State: CO

  9. Areas of Weakly Anomalous to Anomalous Surface Temperature in Routt County, Colorado, as Identified from ASTER Thermal Data

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Hussein, Khalid

    2012-02-01

    Citation Information: Originator: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Publication Date: 2012 Title: Warm Modeled Temperature Routt Edition: First Note: This “Weakly Anomalous to Anomalous Surface Temperature” dataset differs from the “Anomalous Surface Temperature” dataset for this county (another remotely sensed CIRES product) by showing areas of modeled temperatures between 1σ and 2σ above the mean, as opposed to the greater than 2σ temperatures contained in the “Anomalous Surface Temperature” dataset. Publication Information: Publication Place: Earth Science & Observation Center, Cooperative Institute for Research in Environmental Science (CIRES), University of Colorado, Boulder Publisher: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Description: This layer contains areas of anomalous surface temperature in Routt County identified from ASTER thermal data and spatial based insolation model. The temperature is calculated using the Emissivity Normalization Algorithm that separate temperature from emissivity. The incoming solar radiation was calculated using spatial based insolation model developed by Fu and Rich (1999). Then the temperature due to solar radiation was calculated using emissivity derived from ASTER data. The residual temperature, i.e. temperature due to solar radiation subtracted from ASTER temperature was used to identify thermally anomalous areas. Areas that had temperature between 1σ and 2σ were considered ASTER modeled warm surface exposures (thermal anomalies) Spatial Domain: Extent: Top: 4501071.574000 m Left: 311351.975000 m Right: 359411.975000 m Bottom: 4447521.574000 m Contact Information: Contact Organization: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Contact Person: Khalid Hussein Address: CIRES, Ekeley Building Earth Science & Observation Center (ESOC) 216 UCB City: Boulder State: CO Postal Code

  10. Areas of Weakly Anomalous to Anomalous Surface Temperature in Garfield County, Colorado, as Identified from ASTER Thermal Data

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Hussein, Khalid

    2012-02-01

    Citation Information: Originator: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Publication Date: 2012 Title: Warm Modeled Temperature Garfield Edition: First Note: This “Weakly Anomalous to Anomalous Surface Temperature” dataset differs from the “Anomalous Surface Temperature” dataset for this county (another remotely sensed CIRES product) by showing areas of modeled temperatures between 1σ and 2σ above the mean, as opposed to the greater than 2σ temperatures contained in the “Anomalous Surface Temperature” dataset. Publication Information: Publication Place: Earth Science & Observation Center, Cooperative Institute for Research in Environmental Science (CIRES), University of Colorado, Boulder Publisher: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Description: This layer contains areas of anomalous surface temperature in Garfield County identified from ASTER thermal data and spatial based insolation model. The temperature is calculated using the Emissivity Normalization Algorithm that separate temperature from emissivity. The incoming solar radiation was calculated using spatial based insolation model developed by Fu and Rich (1999). Then the temperature due to solar radiation was calculated using emissivity derived from ASTER data. The residual temperature, i.e. temperature due to solar radiation subtracted from ASTER temperature was used to identify thermally anomalous areas. Areas that had temperature between 1σ and 2σ were considered ASTER modeled warm surface exposures (thermal anomalies) Spatial Domain: Extent: Top: 4442180.552290 m Left: 268655.053363 m Right: 359915.053363 m Bottom: 4312490.552290 m Contact Information: Contact Organization: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Contact Person: Khalid Hussein Address: CIRES, Ekeley Building Earth Science & Observation Center (ESOC) 216 UCB City: Boulder State: CO Postal

  11. Areas of Weakly Anomalous to Anomalous Surface Temperature in Dolores County, Colorado, as Identified from ASTER Thermal Data

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Hussein, Khalid

    2012-02-01

    Citation Information: Originator: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Publication Date: 2012 Title: Very Warm Modeled Temperature Dolores Edition: First Note: This “Weakly Anomalous to Anomalous Surface Temperature” dataset differs from the “Anomalous Surface Temperature” dataset for this county (another remotely sensed CIRES product) by showing areas of modeled temperatures between 1σ and 2σ above the mean, as opposed to the greater than 2σ temperatures contained in the “Anomalous Surface Temperature” dataset. Publication Information: Publication Place: Earth Science & Observation Center, Cooperative Institute for Research in Environmental Science (CIRES), University of Colorado, Boulder Publisher: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Description: This layer contains areas of anomalous surface temperature in Dolores County identified from ASTER thermal data and spatial based insolation model. The temperature is calculated using the Emissivity Normalization Algorithm that separate temperature from emissivity. The incoming solar radiation was calculated using spatial based insolation model developed by Fu and Rich (1999). Then the temperature due to solar radiation was calculated using emissivity derived from ASTER data. The residual temperature, i.e. temperature due to solar radiation subtracted from ASTER temperature was used to identify thermally anomalous areas. Areas that had temperature greater than 2σ were considered ASTER modeled very warm surface exposures (thermal anomalies) Spatial Domain: Extent: Top: 4186234.213315 m Left: 212558.673056 m Right: 232922.811862 m Bottom: 4176781.467043 m Contact Information: Contact Organization: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Contact Person: Khalid Hussein Address: CIRES, Ekeley Building Earth Science & Observation Center (ESOC) 216 UCB City: Boulder State: CO

  12. Areas of Weakly Anomalous to Anomalous Surface Temperature in Alamosa and Saguache Counties, Colorado, as Identified from ASTER Thermal Data

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Hussein, Khalid

    2012-02-01

    Citation Information: Originator: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Publication Date: 2012 Title: Very Warm Modeled Temperature Alamosa Saguache Edition: First Note: This “Weakly Anomalous to Anomalous Surface Temperature” dataset differs from the “Anomalous Surface Temperature” dataset for this county (another remotely sensed CIRES product) by showing areas of modeled temperatures between 1σ and 2σ above the mean, as opposed to the greater than 2σ temperatures contained in the “Anomalous Surface Temperature” dataset. Publication Information: Publication Place: Earth Science & Observation Center, Cooperative Institute for Research in Environmental Science (CIRES), University of Colorado, Boulder Publisher: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Description: This layer contains areas of anomalous surface temperature in Alamosa and Saguache Counties identified from ASTER thermal data and spatial based insolation model. The temperature is calculated using the Emissivity Normalization Algorithm that separate temperature from emissivity. The incoming solar radiation was calculated using spatial based insolation model developed by Fu and Rich (1999). Then the temperature due to solar radiation was calculated using emissivity derived from ASTER data. The residual temperature, i.e. temperature due to solar radiation subtracted from ASTER temperature was used to identify thermally anomalous areas. Areas that had temperature greater than 2σ were considered ASTER modeled very warm surface exposures (thermal anomalies) Spatial Domain: Extent: Top: 4217727.601630 m Left: 394390.400264 m Right: 460179.841813 m Bottom: 4156258.036086 m Contact Information: Contact Organization: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Contact Person: Khalid Hussein Address: CIRES, Ekeley Building Earth Science & Observation Center (ESOC) 216 UCB

  13. Areas of Weakly Anomalous to Anomalous Surface Temperature in Chaffee County, Colorado, as Identified from ASTER Thermal Data

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Hussein, Khalid

    2012-02-01

    Citation Information: Originator: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Publication Date: 2012 Title: Very Warm Modeled Temperature Chaffee Edition: First Note: This “Weakly Anomalous to Anomalous Surface Temperature” dataset differs from the “Anomalous Surface Temperature” dataset for this county (another remotely sensed CIRES product) by showing areas of modeled temperatures between 1σ and 2σ above the mean, as opposed to the greater than 2σ temperatures contained in the “Anomalous Surface Temperature” dataset. Publication Information: Publication Place: Earth Science & Observation Center, Cooperative Institute for Research in Environmental Science (CIRES), University of Colorado, Boulder Publisher: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Description: This layer contains areas of anomalous surface temperature in Chaffee County identified from ASTER thermal data and spatial based insolation model. The temperature is calculated using the Emissivity Normalization Algorithm that separate temperature from emissivity. The incoming solar radiation was calculated using spatial based insolation model developed by Fu and Rich (1999). Then the temperature due to solar radiation was calculated using emissivity derived from ASTER data. The residual temperature, i.e. temperature due to solar radiation subtracted from ASTER temperature was used to identify thermally anomalous areas. Areas that had temperature greater than 2σ were considered ASTER modeled very warm surface exposures (thermal anomalies) Spatial Domain: Extent: Top: 4333432.368072 m Left: 366907.700763 m Right: 452457.816015 m Bottom: 4208271.566715 m Contact Information: Contact Organization: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Contact Person: Khalid Hussein Address: CIRES, Ekeley Building Earth Science & Observation Center (ESOC) 216 UCB City: Boulder State: CO

  14. ALD TiO2-Al2O3 Stack: An Improved Gate Dielectrics on Ga-polar GaN MOSCAPs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wei, Daming; Edgar, James H.; Briggs, Dayrl P.; Srijanto, Bernadeta R.; Retterer, Scott T.; Meyer, III, Harry M.

    2014-10-15

    This research focuses on the benefits and properties of TiO2-Al2O3 nano-stack thin films deposited on Ga2O3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO2, 7.1 nm Al2O3 and 2 nm Ga2O3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectron spectroscopy (XPS) depth profile, was negligible for GaN pretreated bymore » thermal oxidation in O2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO2-Al2O3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al2O3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 1011 cm-2. The gate leakage current density (J=2.81× 10-8 A/cm2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO2/Al2O3 for serving as the gate oxide on Ga2O3/GaN based MOS devices.« less

  15. The influence of surface preparation on low temperature HfO{sub 2} ALD on InGaAs (001) and (110) surfaces

    SciTech Connect (OSTI)

    Kent, Tyler; Edmonds, Mary; Kummel, Andrew C.; Tang, Kechao; Negara, Muhammad Adi; McIntyre, Paul; Chobpattana, Varistha; Mitchell, William; Sahu, Bhagawan; Galatage, Rohit; Droopad, Ravi

    2015-10-28

    Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher C{sub max} hypothesized to be a result of poor nucleation of HfO{sub 2} on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low D{sub it} high C{sub ox} MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared.

  16. ALD Produced B{sub 2}O{sub 3}, Al{sub 2}O{sub 3} and TiO{sub 2} Coatings on Gd{sub 2}O{sub 3} Burnable Poison Nanoparticles and Carbonaceous TRISO Coating Layers

    SciTech Connect (OSTI)

    Weimer, Alan

    2012-11-26

    This project will demonstrate the feasibility of using atomic layer deposition (ALD) to apply ultrathin neutron-absorbing, corrosion-resistant layers consisting of ceramics, metals, or combinations thereof, on particles for enhanced nuclear fuel pellets. Current pellet coating technology utilizes chemical vapor deposition (CVD) in a fluidized bed reactor to deposit thick, porous layers of C (or PyC) and SiC. These graphitic/carbide materials degrade over time owing to fission product bombardment, active oxidation, thermal management issues, and long-term irradiation effects. ALD can be used to deposit potential ceramic barrier materials of interest, including ZrO{sub 2}, Y{sub 2}O{sub 3}:ZrO{sub 2} (YSZ), Al{sub 2}O{sub 3}, and TiO{sub 2}, or neutron-absorbing materials, namely B (in BN or B{sub 2}O{sub 3}) and Gd (in Gd{sub 2}O{sub 3}). This project consists of a two-pronged approach to integrate ALD into the next-generation nuclear plant (NGNP) fuel pellet manufacturing process:

  17. Atmospheric pressure plasma enhanced spatial ALD of silver

    SciTech Connect (OSTI)

    Bruele, Fieke J. van den Smets, Mireille; Illiberi, Andrea; Poodt, Paul; Buskens, Pascal; Roozeboom, Fred

    2015-01-15

    The authors have investigated the growth of thin silver films using a unique combination of atmospheric process elements: spatial atomic layer deposition and an atmospheric pressure surface dielectric barrier discharge plasma source. Silver films were grown on top of Si substrates with good purity as revealed by resistivity values as low as 18 μΩ cm and C- and F-levels below detection limits of energy dispersive x-ray analysis. The growth of the silver films starts through the nucleation of islands that subsequently coalesce. The authors show that the surface island morphology is dependent on surface diffusion, which can be controlled by temperature within the deposition temperature range of 100–120 °C.

  18. ALD Vacuum Technologies GmbH | Open Energy Information

    Open Energy Info (EERE)

    vacuum process equipment, including polycrystalline silicon furnaces for PV feedstock recycling. Coordinates: 50.135387, 8.916574 Show Map Loading map... "minzoom":false,"mapp...

  19. Atomic Layer Deposition (ALD) Preparation of Noble Metal Catalysts - Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    National Nuclear Security Administration | (NNSA) Explores Peaceful Uses of Nuclear Explosions Atomic Energy Commission Explores Peaceful Uses of Nuclear Explosions Nevada Test Site, NV As part of the Plowshare program seeking to develop peaceful uses for nuclear explosives, the Atomic Energy Commission conducts the Sedan test at the Nevada Test Site Programs | National Nuclear Security Administration | (NNSA)

    Takes Over Responsibility for all Atomic Energy Programs Atomic Energy

  20. Geothermal Exploration in Eastern California Using Aster Thermal...

    Open Energy Info (EERE)

    temperatures higher up). Taking these effects into account makes it possible to reveal temperature anomalies, which are otherwise not distinguishable in the uncorrected imagery....

  1. Cathodic ALD V2O5 thin films for high-rate electrochemical energy...

    Office of Scientific and Technical Information (OSTI)

    Country of Publication: United States Language: English Subject: bio-inspired, energy storage (including batteries and capacitors), defects, charge transport, synthesis (novel ...

  2. Impact of ALD Coating on Li/Mn-rich Cathode Materials

    Broader source: Energy.gov [DOE]

    2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  3. Environmental Management Directorate Fiscal Year 2000 Budget Submittal (FY00-02) Michael Schlender, EM ALD March 6, 2000

    Office of Environmental Management (EM)

    Brookhaven Science Associates U.S. Department of Energy Brookhaven Graphite Research Reactor Workshop May 9 and 10, 2007 Brookhaven Science Associates U.S. Department of Energy 2 BGRR Location at BNL BGRR Location at BNL BGRR Location at BNL BGRR Location at BNL Brookhaven Science Associates U.S. Department of Energy BGRR Complex BGRR Complex Brookhaven Science Associates U.S. Department of Energy 4 BGRR General Background BGRR General Background  First reactor built for peacetime research on

  4. Combined SWIR and LWIR Mineral Mapping Using MASTER/ASTER | Open...

    Open Energy Info (EERE)

    VNIRSWIRLWIR remote sensing datasets is in progress. Author F. A. Kruse Published IEEE Operations Center, 20020624 DOI Not Provided Check for DOI availability: http:...

  5. Multispectral Imaging At Salton Sea Area (Reath, Et Al., 2010...

    Open Energy Info (EERE)

    Sea Area Exploration Technique Multispectral Imaging Activity Date Spectral Imaging Sensor ASTER Usefulness not indicated DOE-funding Unknown Notes ASTER References K. A. Reath,...

  6. Multispectral Imaging At Yellowstone Region (Hellman & Ramsey...

    Open Energy Info (EERE)

    Region Exploration Technique Multispectral Imaging Activity Date Spectral Imaging Sensor ASTER Usefulness useful DOE-funding Unknown Notes ASTER References Melanie J. Hellman,...

  7. Multispectral Imaging At Buffalo Valley Hot Springs Area (Littlefield...

    Open Energy Info (EERE)

    Area Exploration Technique Multispectral Imaging Activity Date Spectral Imaging Sensor ASTER Usefulness useful DOE-funding Unknown Notes ASTER airborne remote sensing....

  8. Improved Cycle Life and Stability of Lithium Metal Anodes through Ultrathin

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALD Surface Treatments - Joint Center for Energy Storage Research September 11, 2015, Research Highlights Improved Cycle Life and Stability of Lithium Metal Anodes through Ultrathin ALD Surface Treatments Improved cycle life of Li metal anodes: control (black) vs. ALD (blue). Voltage in the upper graph represents overpotential in Li-Li symmetric cells and demonstrates how ALD can improve electrochemical lifetime. Micrographs show the improved resistance to dendrite growth after ALD

  9. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    IL (United States) Clinch River Breeder Reactor Project, Oak Ridge, TN (United States) ... substrates utilizing a rotating cylinder reactor to perform the S-ALD. S-ALD was first ...

  10. 2.3.1.11: Low-Energy Magnetic-Field Separation using Magnetic...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    (Brotzman) 23 May 2013 Abbreviations HC: hydrocarbon SN: superparamagnetic nanoparticles NP: nanoparticle NA: nanostructured adsorbent D: diameter (NP) ALD: ...

  11. Analysis Of Hot Springs And Associated Deposits In Yellowstone...

    Open Energy Info (EERE)

    Spaceborne Thermal Emission and Reflection Radiometer (ASTER) and the Airborne VisibleIR Image Spectrometer (AVIRIS) data were used to characterize hot spring deposits in the...

  12. SWIR at Steamboat Springs Geothermal Area (Kruse 2012) | Open...

    Open Energy Info (EERE)

    Springs Geothermal Area Exploration Technique SWIR Activity Date Spectral Imaging Sensor MASTER, ASTER, AVIRIS Usefulness useful DOE-funding none Notes Analysis of the SWIR...

  13. EERE PowerPoint 97-2004 Template: Green Version

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... heat transfer * Incorporate data into a GIS database for processing * Process into ... each play identified - Ancillary data for GIS overlays * ASTER analysis (10 images) - ...

  14. Multispectral Imaging | Open Energy Information

    Open Energy Info (EERE)

    ASTER imager utilizes 14 bands that cover portions of the visible (green, yellow, and red), near infrared (NIR), short wavelength infrared (SWIR), and long wavelength infrared...

  15. Geothermometry At Teels Marsh Area (Coolbaugh, Et Al., 2006)...

    Open Energy Info (EERE)

    useful DOE-funding Unknown Notes Follow up (to ASTER satellite imaging) analysis of spring and well waters yielded geothermometer reservoir estimates up to 192C References...

  16. Geothermometry At Rhodes Marsh Area (Coolbaugh, Et Al., 2006...

    Open Energy Info (EERE)

    useful DOE-funding Unknown Notes Follow up (to ASTER satellite imaging) analysis of spring and well waters yielded geothermometer reservoir estimates up to 162C References...

  17. IN SEARCH FOR THERMAL ANOMALIES IN THE COSO GEOTHERMAL FIELD...

    Open Energy Info (EERE)

    AND FIELD DATA Abstract We attempt to identify thermal anomalies using thermal infrared (TIR) data collected over the Coso Geothermal Power Project with the spaceborne ASTER...

  18. Detection of Surface Temperature Anomalies in the Coso Geothermal...

    Open Energy Info (EERE)

    Geothermal Field Using Thermal Infrared Remote Sensing Abstract We use thermal infrared (TIR) data from the spaceborne ASTER instrument to detect surface temperature anomalies in...

  19. Thermal And-Or Near Infrared (Dudley-Murphy & Nash, 2003) | Open...

    Open Energy Info (EERE)

    DOE-funding Unknown References Elizabeth A. Dudley-Murphy, Gregory D. Nash (2003) Tir (Aster) Geothermal Anomalies Additional References Retrieved from "http:...

  20. Thermal And-Or Near Infrared At Coso Geothermal Area (2007) ...

    Open Energy Info (EERE)

    and field data is effective for determining geothermal areas Notes Thermal infrared (TIR) data from the spaceborne ASTER instrument was used to detect surface temperature...

  1. Advisory Board Members

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    geoscience, and climate science. External Richard Aster New Mexico Tech George Fuller UC San Diego Brian McPherson University of Utah Mike Liemohn University of Michigan...

  2. Resistive switching characteristics of polycrystalline SrTiO{sub 3} films

    SciTech Connect (OSTI)

    Jong Choi, Hyung; Won Park, Suk; Deok Han, Gwon; Hyung Shim, Joon; Na, Junhong; Kim, Gyu-Tae

    2014-06-16

    Strontium titanate (STO) thin films 90?nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800?C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (10{sup 8}10{sup 9}) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.

  3. Institute for Atom-Efficient Chemical Transformations - Materials...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of which are crucial for evaluating performance in the proverbial vacuum. Using atomic layer deposition (ALD), researchers can create highly specific nanobowls, controlling...

  4. Diane Rodi | Argonne Leadership Computing Facility

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Diane Rodi ALD ESHQA Coordinator Argonne National Laboratory 9700 S. Cass Avenue Building 240 - Rm. 4125 Argonne, IL 60439 630-252-1617 drodi@anl...

  5. Synthesis of Pt-Pd Core-Shell Nanostructures by Atomic Layer...

    Office of Scientific and Technical Information (OSTI)

    and by applying ALD metal oxide coatings to modify the support surface chemistry. ... Resource Type: Journal Article Resource Relation: Journal Name: Chemistry of Materials; ...

  6. Slide 1

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Room Temperature and Pressure printing at nano-scale and above, * Expeditious ... of unique materials, such as carbon nano-tubes. * Demonstration of ALD at realistic ...

  7. A non-destructive method for measuring the mechanical properties of ultrathin films prepared by atomic layer deposition

    SciTech Connect (OSTI)

    Zhang, Qinglin; Xiao, Xingcheng Verbrugge, Mark W.; Cheng, Yang-Tse

    2014-08-11

    The mechanical properties of ultrathin films synthesized by atomic layer deposition (ALD) are critical for the liability of their coated devices. However, it has been a challenge to reliably measure critical properties of ALD films due to the influence from the substrate. In this work, we use the laser acoustic wave (LAW) technique, a non-destructive method, to measure the elastic properties of ultrathin Al{sub 2}O{sub 3} films by ALD. The measured properties are consistent with previous work using other approaches. The LAW method can be easily applied to measure the mechanical properties of various ALD thin films for multiple applications.

  8. News Item

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    with nanoscale materials. This talk will describe research on nanoscale materials for solar photovoltaics and solar fuel production. Atomic layer deposition (ALD) is used to...

  9. Quadrennial Technology Review Acronyms

    Broader source: Energy.gov (indexed) [DOE]

    ALCF Argonne Leadership Computing Facility ALD atomic layer deposition ALS Advanced Light ... CXI Coherent X-ray Imaging D&D demonstration and deployment DARPA Defense Advanced ...

  10. Ruthenium / aerogel nanocomposits via Atomic Layer Deposition

    SciTech Connect (OSTI)

    Biener, J; Baumann, T F; Wang, Y; Nelson, E J; Kucheyev, S O; Hamza, A V; Kemell, M; Ritala, M; Leskela, M

    2006-08-28

    We present a general approach to prepare metal/aerogel nanocomposites via template directed atomic layer deposition (ALD). In particular, we used a Ru ALD process consisting of alternating exposures to bis(cyclopentadienyl)ruthenium (RuCp{sub 2}) and air at 350 C to deposit metallic Ru nanoparticles on the internal surfaces of carbon and silica aerogels. The process does not affect the morphology of the aerogel template and offers excellent control over metal loading by simply adjusting the number of ALD cycles. We also discuss the limitations of our ALD approach, and suggest ways to overcome these.

  11. Solid flexible electrochemical supercapacitor using Tobacco mosaic...

    Office of Scientific and Technical Information (OSTI)

    mosaic virus nanostructures and ALD ruthenium oxide Citation Details In-Document Search Title: Solid flexible electrochemical supercapacitor using Tobacco mosaic virus ...

  12. Picosun | Open Energy Information

    Open Energy Info (EERE)

    We develop and manufacture Atomic Layer Deposition (ALD) reactors for micro- and nanotechnology applications. References: Picosun1 This article is a stub. You can help OpenEI...

  13. Interface colloidal robotic manipulator

    DOE Patents [OSTI]

    Aronson, Igor; Snezhko, Oleksiy

    2015-08-04

    A magnetic colloidal system confined at the interface between two immiscible liquids and energized by an alternating magnetic field dynamically self-assembles into localized asters and arrays of asters. The colloidal system exhibits locomotion and shape change. By controlling a small external magnetic field applied parallel to the interface, structures can capture, transport, and position target particles.

  14. Activation of farnesoid X receptor attenuates hepatic injury in a murine model of alcoholic liver disease

    SciTech Connect (OSTI)

    Wu, Weibin; Institutes of Biomedical Science, Fudan University, Shanghai 200032 ; Zhu, Bo; Peng, Xiaomin; Zhou, Meiling; Jia, Dongwei; Gu, Jianxin; Institutes of Biomedical Science, Fudan University, Shanghai 200032

    2014-01-03

    Highlights: FXR activity was impaired by chronic ethanol ingestion in a murine model of ALD. Activation of FXR attenuated alcohol-induced liver injury and steatosis. Activation of FXR attenuated cholestasis and oxidative stress in mouse liver. -- Abstract: Alcoholic liver disease (ALD) is a common cause of advanced liver disease, and considered as a major risk factor of morbidity and mortality worldwide. Hepatic cholestasis is a pathophysiological feature observed in all stages of ALD. The farnesoid X receptor (FXR) is a member of the nuclear hormone receptor superfamily, and plays an essential role in the regulation of bile acid, lipid and glucose homeostasis. However, the role of FXR in the pathogenesis and progression of ALD remains largely unknown. Mice were fed Lieber-DeCarli ethanol diet or an isocaloric control diet. We used a specific agonist of FXR WAY-362450 to study the effect of pharmacological activation of FXR in alcoholic liver disease. In this study, we demonstrated that FXR activity was impaired by chronic ethanol ingestion in a murine model of ALD. Activation of FXR by specific agonist WAY-362450 protected mice from the development of ALD. We also found that WAY-362450 treatment rescued FXR activity, suppressed ethanol-induced Cyp2e1 up-regulation and attenuated oxidative stress in liver. Our results highlight a key role of FXR in the modulation of ALD development, and propose specific FXR agonists for the treatment of ALD patients.

  15. A modular reactor design for in situ synchrotron x-ray investigation of atomic layer deposition processes

    SciTech Connect (OSTI)

    Klug, Jeffrey A. Emery, Jonathan D.; Martinson, Alex B. F.; Proslier, Thomas; Weimer, Matthew S.; Yanguas-Gil, Angel; Elam, Jeffrey W.; Seifert, Sönke; Schlepütz, Christian M.; Hock, Adam S.

    2015-11-15

    Synchrotron characterization techniques provide some of the most powerful tools for the study of film structure and chemistry. The brilliance and tunability of the Advanced Photon Source allow access to scattering and spectroscopic techniques unavailable with in-house laboratory setups and provide the opportunity to probe various atomic layer deposition (ALD) processes in situ starting at the very first deposition cycle. Here, we present the design and implementation of a portable ALD instrument which possesses a modular reactor scheme that enables simple experimental switchover between various beamlines and characterization techniques. As first examples, we present in situ results for (1) X-ray surface scattering and reflectivity measurements of epitaxial ZnO ALD on sapphire, (2) grazing-incidence small angle scattering of MnO nucleation on silicon, and (3) grazing-incidence X-ray absorption spectroscopy of nucleation-regime Er{sub 2}O{sub 3} ALD on amorphous ALD alumina and single crystalline sapphire.

  16. A modular reactor design for in situ synchrotron X-ray investigation of atomic layer deposition processes

    SciTech Connect (OSTI)

    Klug, Jeffrey A.; Weimer, Matthew S.; Emery, Jonathan D.; Yanguas-Gil, Angel; Seifert, Sonke; Schleputz, Christian M.; Martinson, Alex B. F.; Elam, Jeffrey W.; Hock, Adam S.; Proslier, Thomas

    2015-11-01

    Synchrotron characterization techniques provide some of the most powerful tools for the study of film structure and chemistry. The brilliance and tunability of the Advanced Photon Source allow access to scattering and spectroscopic techniques unavailable with in-house laboratory setups and provide the opportunity to probe various atomic layer deposition (ALD) processes in situ starting at the very first deposition cycle. Here, we present the design and implementation of a portable ALD instrument which possesses a modular reactor scheme that enables simple experimental switchover between various beamlines and characterization techniques. As first examples, we present \\textit{in situ} results for 1.) X-ray surface scattering and reflectivity measurements of epitaxial ZnO ALD on sapphire, 2.) grazing-incidence small angle scattering of MnO nucleation on silicon, and 3.) grazing-incidence X-ray absorption spectroscopy of nucleation-regime Er2O3 ALD on amorphous ALD alumina and single crystalline sapphire.

  17. Atomic Layer Deposition for the Conformal Coating of Nanoporous Materials

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Elam, Jeffrey W.; Xiong, Guang; Han, Catherine Y.; Wang, H. Hau; Birrell, James P.; Welp, Ulrich; Hryn, John N.; Pellin, Michael J.; Baumann, Theodore F.; Poco, John F.; et al

    2006-01-01

    Amore » tomic layer deposition ( ALD ) is ideal for applying precise and conformal coatings over nanoporous materials. We have recently used ALD to coat two nanoporous solids: anodic aluminum oxide ( AAO ) and silica aerogels. AAO possesses hexagonally ordered pores with diameters d ∼ 40 nm and pore length L ∼ 70 microns. The AAO membranes were coated by ALD to fabricate catalytic membranes that demonstrate remarkable selectivity in the oxidative dehydrogenation of cyclohexane.dditional AAO membranes coated with ALD Pd films show promise as hydrogen sensors. Silica aerogels have the lowest density and highest surface area of any solid material. Consequently, these materials serve as an excellent substrate to fabricate novel catalytic materials and gas sensors by ALD .« less

  18. On the physical and chemical details of alumina atomic layer deposition: A combined experimental and numerical approach

    SciTech Connect (OSTI)

    Pan, Dongqing; Ma, Lulu; Xie, Yuanyuan; Yuan, Chris; Jen, Tien Chien

    2015-03-15

    Alumina thin film is typically studied as a model atomic layer deposition (ALD) process due to its high dielectric constant, high thermal stability, and good adhesion on various wafer surfaces. Despite extensive applications of alumina ALD in microelectronics industries, details on the physical and chemical processes are not yet well understood. ALD experiments are not able to shed adequate light on the detailed information regarding the transient ALD process. Most of current numerical approaches lack detailed surface reaction mechanisms, and their results are not well correlated with experimental observations. In this paper, the authors present a combined experimental and numerical study on the details of flow and surface reactions in alumina ALD using trimethylaluminum and water as precursors. Results obtained from experiments and simulations are compared and correlated. By experiments, growth rate on five samples under different deposition conditions is characterized. The deposition rate from numerical simulation agrees well with the experimental results. Details of precursor distributions in a full cycle of ALD are studied numerically to bridge between experimental observations and simulations. The 3D transient numerical model adopts surface reaction kinetics and mechanisms based on atomic-level studies to investigate the surface deposition process. Surface deposition is shown as a strictly self-limited process in our numerical studies. ALD is a complex strong-coupled fluid, thermal and chemical process, which is not only heavily dependent on the chemical kinetics and surface conditions but also on the flow and material distributions.

  19. Palladium catalysts synthesized by atomic layer deposition for methanol decomposition.

    SciTech Connect (OSTI)

    Elam, J. W.; Feng, H.; Stair, P. C.; Libera, J. A.; Setthapun, W.; Northwestern Univ.

    2010-05-25

    Atomic layer deposition (ALD) palladium films were deposited at 200 C on various ALD metal oxide surfaces using sequential exposures to Pd(II) hexafluoroacetylacetonate (Pd(hfac)2) and formalin. In situ quartz crystal microbalance measurements as well as ex situ measurements performed on planar substrates revealed that the Pd growth begins with a relatively slow nucleation process and accelerates once an adequate amount of Pd has deposited on the surface. Furthermore, the Pd nucleation is faster on ALD ZnO surfaces compared to ALD Al2O3 surfaces. ALD was utilized to synthesize highly dispersed, uniform Pd nanoparticles (1 to 2 nm in diameter) on ALD ZnO and Al2O3 coated mesoporous silica gel, and the catalytic performances of these samples were compared in the methanol decomposition reaction. The ALD Pd-Al2O3 showed high activity and hydrogen selectivity at relatively low temperatures while the ALD Pd-ZnO showed very low activity as well as quick deactivation. In situ extended X-ray absorption fine structure (EXAFS) measurement revealed that the Pd supported on ZnO 'dissolves' into the substrate during the methanol decomposition reaction which accounts for the gradual disappearance of its catalytic activity. By applying one cycle of ALD Al2O3 on top of the Pd-ZnO catalyst, the activity was enhanced and the catalyst deactivation was mitigated. This Al2O3 overcoating method stabilizes the Pd-ZnO and effectively prevents the dissolution of Pd into the ZnO substrate.

  20. In situ study of atomic layer deposition Al{sub 2}O{sub 3} on GaP (100)

    SciTech Connect (OSTI)

    Dong, H.; Brennan, B.; Qin, X.; Hinkle, C. L.; Kim, J.; Wallace, R. M.; Zhernokletov, D. M.

    2013-09-16

    The interfacial chemistry of atomic layer deposition (ALD) of Al{sub 2}O{sub 3} on chemically treated GaP (100) has been studied using in situ X-ray photoelectron spectroscopy. A “self-cleaning” effect for Ga-oxide upon exposure to trimethylaluminum is seen to be efficient on the native oxide and chemically treated surfaces. The phosphorus oxide chemical states are seen to change during the ALD process, but the total concentration of P-oxides is seen to remain constant throughout the ALD process.

  1. Atomic Layer Deposition of L-Alanine Polypeptide

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Fu, Yaqin; Li, Binsong; Jiang, Ying-Bing; Dunphy, Darren R.; Tsai, Andy; Tam, Siu-Yue; Fan, Hongyou Y.; Zhang, Hongxia; Rogers, David; Rempe, Susan; et al

    2014-10-30

    L-Alanine polypeptide thin films were synthesized via atomic layer deposition (ALD). Rather, instead of using an amino acid monomer as the precursor, an L-alanine amino acid derivatized with a protecting group was used to prevent self-polymerization, increase the vapor pressure, and allow linear cycle-by-cycle growth emblematic of ALD. Moreover, the successful deposition of a conformal polypeptide film has been confirmed by FTIR, TEM, and Mass Spectrometry, and the ALD process has been extended to polyvaline.

  2. Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

    SciTech Connect (OSTI)

    Wu, Wei Cao, Yanyan; Caspar, Jonathan V.; Guo, Qijie; Johnson, Lynda K.; Mclean, Robert S.; Malajovich, Irina; Choudhury, Kaushik Roy

    2014-07-28

    We describe a CZTSSe (Cu{sub 2}ZnSn(S{sub 1−x},Se{sub x}){sub 4}) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO{sub 2}, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.

  3. Surface smoothing effect of an amorphous thin film deposited by atomic layer deposition on a surface with nano-sized roughness

    SciTech Connect (OSTI)

    Lau, W. S. Wan, X.; Xu, Y.; Wong, H.; Zhang, J.; Luo, J. K.; Institute of Renewable Energy and Environment Technology, Bolton University, Deane Road, Bolton BL3 5 AB

    2014-02-15

    Previously, Lau (one of the authors) pointed out that the deposition of an amorphous thin film by atomic layer deposition (ALD) on a substrate with nano-sized roughness probably has a surface smoothing effect. In this letter, polycrystalline zinc oxide deposited by ALD onto a smooth substrate was used as a substrate with nano-sized roughness. Atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) were used to demonstrate that an amorphous aluminum oxide thin film deposited by ALD can reduce the surface roughness of a polycrystalline zinc oxide coated substrate.

  4. A Novel Secreted Protein, MYR1, Is Central to Toxoplasma's Manipulatio...

    Office of Scientific and Technical Information (OSTI)

    ... CC, Freedman ML, Blacklow SC, Aster JC, Bernstein BE, Kieff E. 2011. Epstein-Barr virus exploits intrinsic B-lymphocyte tran- scription programs to achieve immortal cell growth. ...

  5. Research | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Argonne in the marketplace: Microchannel plates with ALD Pixelligent Technologies granted innovation research award by Dept. of Energy ARPA-E awards IIT-Argonne team 3.4 million ...

  6. In situ study of HfO{sub 2} atomic layer deposition on InP(100)

    SciTech Connect (OSTI)

    Dong, H.; Brennan, B.; Kim, J.; Hinkle, C. L.; Wallace, R. M.; Zhernokletov, D.

    2013-04-29

    The interfacial chemistry of the native oxide and chemically treated InP samples during atomic layer deposition (ALD) HfO{sub 2} growth at 250 Degree-Sign C has been studied by in situ X-ray photoelectron spectroscopy. The In-oxide concentration is seen to gradually decrease on the native oxide and acid etched samples. No significant changes of the P-oxide concentrations are detected, while the P-oxides chemical states are seen to change gradually during the initial cycles of ALD on the native oxide and the chemically treated samples. (NH{sub 4}){sub 2}S treatment strongly decreases In-oxide and P-oxide concentrations prior to ALD and maintains low concentrations during the ALD process.

  7. Atomic layer deposition of aluminum sulfide thin films using trimethylaluminum and hydrogen sulfide

    SciTech Connect (OSTI)

    Sinha, Soumyadeep; Sarkar, Shaibal K.; Mahuli, Neha

    2015-01-15

    Sequential exposures of trimethylaluminum and hydrogen sulfide are used to deposit aluminum sulfide thin films by atomic layer deposition (ALD) in the temperature ranging from 100 to 200?C. Growth rate of 1.3 per ALD cycle is achieved by in-situ quartz crystal microbalance measurements. It is found that the growth rate per ALD cycle is highly dependent on the purging time between the two precursors. Increased purge time results in higher growth rate. Surface limited chemistry during each ALD half cycle is studied by in-situ Fourier transformed infrared vibration spectroscopy. Time of flight secondary ion-mass spectroscopy measurement is used to confirm elemental composition of the deposited films.

  8. Enhanced Dry Reforming of Methane on Ni and Ni-Pt Catalysts Synthesized by Atomic Layer Deposition

    SciTech Connect (OSTI)

    Gould, Troy D.; Montemore, Matthew M.; Lubers, Alia M.; Ellis, Lucas D.; Weimer, Alan; Falconer, John L.; Medlin, James W.

    2015-02-25

    Atomic layer deposition (ALD) was used to deposit Ni and Pt on alumina supports to form monometallic and bimetallic catalysts with initial particle sizes of 12.4 nm. The ALD catalysts were more active (per mass of metal) than catalysts prepared by incipient wetness (IW) for dry reforming of methane (DRM), and they did not form carbon whiskers during reaction due to their sufficiently small size. Catalysts modified by Pt ALD had higher rates of reaction per mass of metal and inhibited coking, whereas NiPt catalysts synthesized by IW still formed carbon whiskers. Temperature-programmed reduction of Ni catalysts modified by Pt ALD indicated the presence of bimetallic interaction. Density functional theory calculations suggested that under reaction conditions, the NiPt surfaces form Ni-terminated surfaces that are associated with higher DRM rates (due to their C and O adsorption energies, as well as the CO formation and CH4 dissociation energies).

  9. Controlled Phase and Tunable Magnetism in Ordered Iron Oxide...

    Office of Scientific and Technical Information (OSTI)

    Finally, the ALD deposition of iron oxide with well-controlled phase and tunable magnetism demonstrated in this work provides a promising opportunity for the fabrication of 3D nano...

  10. 2014 EFRC NEES KICKOFF MEETING AGENDA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4:30pm LAB TOURS RUBLOFF ALD LAB, NISP LAB BY CUMINGS, GHODSSI MSAL BY KOSTAS (MSAL, MEMS SENSORS & ACTUATORS LAB) 5:30pm 7 O'CLOCK DINNER RESERVATION @ AGORA, DUPONT CIRCLE,...

  11. Angel Yanguas-Gil | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Angel Yanguas-Gil Angel Yanguas-Gil Principal Materials Scientist & Institute Fellow, Northwestern Argonne Institute of Science and Engineering Telephone 630-252-7353 E-mail ayg@anl.gov Website Personal site Twitter Argonne ALD site

  12. Vanadium dioxide film protected with an atomic-layer-deposited...

    Office of Scientific and Technical Information (OSTI)

    In this work, the authors deposited an ultrathin Alsub 2Osub 3 film with atomic layer ... heated at 350 C. However, in a humid environment at prolonged durations, a thicker ALD ...

  13. Atomic-Layer Deposition on Noble Metal Powders

    Office of Scientific and Technical Information (OSTI)

    J. Cappillino, M. Salloum, J. D. Sugar, F. El Gabaly (Sandia) L. Sheridan, K. ... Georgia Maher Salloum Theorymodeling Farid El Gabaly XPS Leah Sheridan E-ALD films Now at ...

  14. jz6b00393 1..6

    Office of Scientific and Technical Information (OSTI)

    ... The 24-shell cluster corresponds to a sphere with a radius of 10 A The experimental stoichiometric ALD BTO is shown at the top as a reference. ------0 2p ------0 2p Ti rich ------0 ...

  15. Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

    SciTech Connect (OSTI)

    Mackus, A. J. M.; Sanden, M. C. M. van de; Kessels, W. M. M.; Mulders, J. J. L.

    2010-06-15

    An approach for direct-write fabrication of high-purity platinum nanostructures has been developed by combining nanoscale lateral patterning by electron beam induced deposition (EBID) with area-selective deposition of high quality material by atomic layer deposition (ALD). Because virtually pure, polycrystalline Pt nanostructures are obtained, the method extends the application possibilities of EBID, whereas compared to other area-selective ALD approaches, a much higher resolution is attainable; potentially down to sub-10 nm lateral dimensions.

  16. Innovation Meets Performance Demands of Advanced Lithium-ion Batteries (Fact Sheet), Highlights in Research & Development, NREL (National Renewable Energy Laboratory)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advancements in high capacity and high density battery technologies have led to a growing need for battery materials with greater charge capacity and therefore stability. NREL's developments in ALD and MLD allow for thin film coatings to battery composite electrodes, which can improve battery lifespan, high charge capacity, and stability. Key Result Silicon, one of the best high-energy anode materials for Li-ion batteries, can experience capacity fade from volumetric expansion. Using ALD and MLD

  17. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

    SciTech Connect (OSTI)

    Elliot, Alan J. E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z. E-mail: jwu@ku.edu; Yu, Haifeng; Zhao, Shiping

    2014-07-15

    Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ?1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

  18. Precise Application of Transparent Conductive Oxide Coatings for Flat Panel

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Displays and Photovoltaic Cells - Energy Innovation Portal Solar Photovoltaic Solar Photovoltaic Advanced Materials Advanced Materials Find More Like This Return to Search Precise Application of Transparent Conductive Oxide Coatings for Flat Panel Displays and Photovoltaic Cells Argonne National Laboratory Contact ANL About This Technology <p align="center"> New <em>ALD reaction chamber containing 12-in x 12-in piece of plate glass</em></p> New ALD reaction

  19. Customized Nanoengineered Coatings for Science and Industry | Argonne

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    National Laboratory Customized Nanoengineered Coatings for Science and Industry Nanoengineered coatings have diverse applications in the manufacture of microelectronics, optics, sensors and solid-state detectors, to name a few. Of the many techniques for producing manoengineered coatings, atomic layer deposition, or ALD, offers superlative performance. Argonne's advanced ALD materials capabilities and intellectual property are available to scientific firms and industry. PDF icon

  20. Thermal and plasma enhanced atomic layer deposition of TiO{sub 2}: Comparison of spectroscopic and electric properties

    SciTech Connect (OSTI)

    Das, Chittaranjan Henkel, Karsten; Tallarida, Massimo; Schmeißer, Dieter; Gargouri, Hassan; Kärkkänen, Irina; Schneidewind, Jessica; Gruska, Bernd; Arens, Michael

    2015-01-15

    Titanium oxide (TiO{sub 2}) deposited by atomic layer deposition (ALD) is used as a protective layer in photocatalytic water splitting system as well as a dielectric in resistive memory switching. The way ALD is performed (thermally or plasma-assisted) may change the growth rate as well as the electronic properties of the deposited films. In the present work, the authors verify the influence of the ALD mode on functional parameters, by comparing the growth rate and electronic properties of TiO{sub 2} films deposited by thermal (T-) and plasma-enhanced (PE-) ALD. The authors complete the study with the electrical characterization of selected samples by means of capacitance–voltage and current–voltage measurements. In all samples, the authors found a significant presence of Ti{sup 3+} states, with the lowest content in the PE-ALD grown TiO{sub 2} films. The observation of Ti{sup 3+} states was accompanied by the presence of in-gap states above the valence band maximum. For films thinner than 10 nm, the authors found also a strong leakage current. Also in this case, the PE-ALD films showed the weakest leakage currents, showing a correlation between the presence of Ti{sup 3+} states and leakage current density.

  1. Controlling Atomic Layer Deposition of TiO2 in Aerogels through Surface Functionalization

    SciTech Connect (OSTI)

    Ghosal, S; Baumann, T F; King, J S; Kucheyev, S; Wang, Y; Worsley, M A; Biener, J; Bent, S F; Hamza, A V

    2009-03-09

    This report demonstrates a chemical functionalization method for controlling atomic layer deposition (ALD) of TiO{sub 2} in low-density nanoporous materials. Functionalization of silica aerogel with trimethylsilane is shown to strongly suppress TiO{sub 2} growth via ALD. Subsequent modification of the functionalization through selective removal of the hydrocarbon groups reactivates the aerogel towards TiO{sub 2} deposition. These results demonstrate the potential use of ALD as a selective tool for creating novel nanoporous materials. Nanoporous materials present significant technological advantage for a wide range of applications, including catalysis, energy storage and conversion, nanoelectronics to name just a few (1-4). Hence, there is considerable interest in developing synthetic pathways for the fabrication of nanoporous materials with tailored properties. Aerogels (AGs) are unique low-density, open-cell porous materials consisting of submicrometer pores and ligaments that can be used as a robust material platform for designing novel nanoporous materials. In recent years, a synthetic approach based on ALD on AG templates has emerged as a promising method for the directed growth of nanoporous materials (5-11, 18). This approach has been used successfully to prepare millimeter-sized high aspect ratio aerogels coated uniformly with zinc oxide (ZnO), tungsten (W) and alumina (Al{sub 2}O{sub 3}) (10, 11). The ALD process utilizes two sequential, self-limiting surface reactions resulting in a layer-by-layer growth mode. The self limiting nature of the surface reactions makes ALD a particularly suitable technique for uniform deposition onto high aspect ratio porous substrates. Additionally, chemical specificity of the surface reactions in ALD enables one to control the deposition process through selective functionalization of the substrate surface. In fact the functionalization of planar substrates such as silicon wafers with organosilane groups (R{sub n}SiX{sub 4-n

  2. Understanding the Structure of Amorphous Thin Film Hafnia - Final Paper

    SciTech Connect (OSTI)

    Miranda, Andre

    2015-08-27

    Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn’t been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.

  3. Understanding the Structure of High-K Gate Oxides - Oral Presentation

    SciTech Connect (OSTI)

    Miranda, Andre

    2015-08-25

    Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn’t been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.

  4. Modeling precursor diffusion and reaction of atomic layer deposition in porous structures

    SciTech Connect (OSTI)

    Keuter, Thomas, E-mail: t.keuter@fz-juelich.de; Menzler, Norbert Heribert; Mauer, Georg; Vondahlen, Frank; Vaen, Robert; Buchkremer, Hans Peter [Forschungszentrum Jlich, Institute of Energy and Climate Research (IEK-1), 52425 Jlich (Germany)

    2015-01-01

    Atomic layer deposition (ALD) is a technique for depositing thin films of materials with a precise thickness control and uniformity using the self-limitation of the underlying reactions. Usually, it is difficult to predict the result of the ALD process for given external parameters, e.g., the precursor exposure time or the size of the precursor molecules. Therefore, a deeper insight into ALD by modeling the process is needed to improve process control and to achieve more economical coatings. In this paper, a detailed, microscopic approach based on the model developed by Yanguas-Gil and Elam is presented and additionally compared with the experiment. Precursor diffusion and second-order reaction kinetics are combined to identify the influence of the porous substrate's microstructural parameters and the influence of precursor properties on the coating. The thickness of the deposited film is calculated for different depths inside the porous structure in relation to the precursor exposure time, the precursor vapor pressure, and other parameters. Good agreement with experimental results was obtained for ALD zirconiumdioxide (ZrO{sub 2}) films using the precursors tetrakis(ethylmethylamido)zirconium and O{sub 2}. The derivation can be adjusted to describe other features of ALD processes, e.g., precursor and reactive site losses, different growth modes, pore size reduction, and surface diffusion.

  5. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

    SciTech Connect (OSTI)

    McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G.; Posadas, Agham; Demkov, Alexander A.

    2015-12-15

    Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al{sub 2}O{sub 3} and HfO{sub 2}. However, there has been much effort to deposit ternary oxides, such as perovskites (ABO{sub 3}), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable.

  6. Atomic layer deposition of titanium sulfide and its application in extremely thin absorber solar cells

    SciTech Connect (OSTI)

    Mahuli, Neha; Sarkar, Shaibal K.

    2015-01-15

    Atomic layer deposition (ALD) of TiS{sub 2} is investigated with titanium tetrachloride and hydrogen sulfide precursors. In-situ quartz crystal microbalance and ex-situ x-ray reflectivity measurements are carried out to study self-limiting deposition chemistry and material growth characteristics. The saturated growth rate is found to be ca. 0.5 Å/cycle within the ALD temperature window of 125–200 °C. As grown material is found poorly crystalline. ALD grown TiS{sub 2} is applied as a photon harvesting material for solid state sensitized solar cells with TiO{sub 2} as electron transport medium. Initial results with Spiro-OMeTAD as hole conducting layer show ca. 0.6% energy conversion efficiency under 1 sun illumination.

  7. Property transformation of graphene with Al{sub 2}O{sub 3} films deposited directly by atomic layer deposition

    SciTech Connect (OSTI)

    Zheng, Li; Cao, Duo; Wang, Zhongjian; Xia, Chao [State Key Laboratory of Functional Materials for Informatics, SIMIT, Chinese Academy of Sciences, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Cheng, Xinhong, E-mail: xh-cheng@mail.sim.ac.cn; Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, SIMIT, Chinese Academy of Sciences, Shanghai 200050 (China); Shen, Dashen [University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States)

    2014-01-13

    Al{sub 2}O{sub 3} films are deposited directly onto graphene by H{sub 2}O-based atomic layer deposition (ALD), and the films are pinhole-free and continuously cover the graphene surface. The growth process of Al{sub 2}O{sub 3} films does not introduce any detective defects in graphene, suppresses the hysteresis effect and tunes the graphene doping to n-type. The self-cleaning of ALD growth process, together with the physically absorbed H{sub 2}O and oxygen-deficient ALD environment consumes OH{sup ?} bonds, suppresses the p-doping of graphene, shifts Dirac point to negative gate bias and enhances the electron mobility.

  8. Fabrication of ion conductive tin oxide-phosphate amorphous thin films by atomic layer deposition

    SciTech Connect (OSTI)

    Park, Suk Won; Jang, Dong Young; Kim, Jun Woo; Shim, Joon Hyung

    2015-07-15

    This work reports the atomic layer deposition (ALD) of tin oxide-phosphate films using tetrakis(dimethylamino)tin and trimethyl phosphate as precursors. The growth rates were 1.23–1.84 Å/cycle depending upon the deposition temperature and precursor combination. The ionic conductivity of the ALD tin oxide-phosphate films was evaluated by cross-plane impedance measurements in the temperature range of 50–300 °C under atmospheric air, with the highest conductivity measured as 1.92 × 10{sup −5} S cm{sup −1} at 300 °C. Furthermore, high-resolution x-ray photoelectron spectroscopy exhibited two O1s peaks that were classified as two subpeaks of hydroxyl ions and oxygen ions, revealing that the quantity of hydroxyl ions in the ALD tin oxide-phosphate films influences their ionic conductivity.

  9. Enhanced photoresponse of conformal TiO{sub 2}/Ag nanorod array-based Schottky photodiodes fabricated via successive glancing angle and atomic layer deposition

    SciTech Connect (OSTI)

    Haider, Ali; Biyikli, Necmi; Cansizoglu, Hilal; Cansizoglu, Mehmet Fatih; Karabacak, Tansel; Okyay, Ali Kemal

    2015-01-01

    In this study, the authors demonstrate a proof of concept nanostructured photodiode fabrication method via successive glancing angle deposition (GLAD) and atomic layer deposition (ALD). The fabricated metal-semiconductor nanorod (NR) arrays offer enhanced photoresponse compared to conventional planar thin-film counterparts. Silver (Ag) metallic NR arrays were deposited on Ag-film/Si templates by utilizing GLAD. Subsequently, titanium dioxide (TiO{sub 2}) was deposited conformally on Ag NRs via ALD. Scanning electron microscopy studies confirmed the successful formation of vertically aligned Ag NRs deposited via GLAD and conformal deposition of TiO{sub 2} on Ag NRs via ALD. Following the growth of TiO{sub 2} on Ag NRs, aluminum metallic top contacts were formed to complete the fabrication of NR-based Schottky photodiodes. Nanostructured devices exhibited a photo response enhancement factor of 1.49??10{sup 2} under a reverse bias of 3 V.

  10. Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

    SciTech Connect (OSTI)

    Bolat, S. E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, B.; Ozgit-Akgun, C.; Biyikli, N.; Okyay, A. K. E-mail: aokyay@ee.bilkent.edu.tr

    2014-06-16

    We report GaN thin film transistors (TFT) with a thermal budget below 250?C. GaN thin films are grown at 200?C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3?nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (I{sub ON}/I{sub OFF}) of 10{sup 3} and sub-threshold swing of 3.3?V/decade. The entire TFT device fabrication process temperature is below 250?C, which is the lowest process temperature reported for GaN based transistors, so far.

  11. Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer

    SciTech Connect (OSTI)

    Son, Seokki; Choi, Moonseok; Kim, Dohyung; Choi, Changhwan; Yu, Sunmoon

    2015-01-12

    We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al{sub 2}O{sub 3} onto exfoliated molybdenum disulfide (MoS{sub 2}) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS{sub 2} by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al{sub 2}O{sub 3}. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al{sub 2}O{sub 3}/MoS{sub 2} interface, but also leaves MoS{sub 2} intact.

  12. Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

    SciTech Connect (OSTI)

    Shin, H. S.; SEMATECH, 2706 Montopolis Dr., Austin, Texas 78741; The University of Texas, Austin, Texas 78758 ; Yum, J. H.; The University of Texas, Austin, Texas 78758 ; Johnson, D. W.; Texas A and M University College Station, Texas 77843 ; Harris, H. R.; Hudnall, Todd W.; Oh, J.; Kirsch, P.; Wang, W.-E.; Bielawski, C. W.; Banerjee, S. K.; Lee, J. C.; Lee, H. D.

    2013-11-25

    In this paper, we discuss atomic configuration of atomic layer deposition (ALD) beryllium oxide (BeO) using the quantum chemistry to understand the theoretical origin. BeO has shorter bond length, higher reaction enthalpy, and larger bandgap energy compared with those of ALD aluminum oxide. It is shown that the excellent material properties of ALD BeO can reduce interface defect density due to the self-cleaning reaction and this contributes to the improvement of device performance of InGaAs MOSFETs. The low interface defect density and low leakage current of InGaAs MOSFET were demonstrated using X-ray photoelectron spectroscopy and the corresponding electrical results.

  13. Numerical modeling of carrier gas flow in atomic layer deposition vacuum reactor: A comparative study of lattice Boltzmann models

    SciTech Connect (OSTI)

    Pan, Dongqing; Chien Jen, Tien [Department of Mechanical Engineering, University of Wisconsin-Milwaukee, Milwaukee, Wisconsin 53201 (United States); Li, Tao [School of Mechanical Engineering, Dalian University of Technology, Dalian 116024 (China); Yuan, Chris, E-mail: cyuan@uwm.edu [Department of Mechanical Engineering, University of Wisconsin-Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211 (United States)

    2014-01-15

    This paper characterizes the carrier gas flow in the atomic layer deposition (ALD) vacuum reactor by introducing Lattice Boltzmann Method (LBM) to the ALD simulation through a comparative study of two LBM models. Numerical models of gas flow are constructed and implemented in two-dimensional geometry based on lattice BhatnagarGrossKrook (LBGK)-D2Q9 model and two-relaxation-time (TRT) model. Both incompressible and compressible scenarios are simulated and the two models are compared in the aspects of flow features, stability, and efficiency. Our simulation outcome reveals that, for our specific ALD vacuum reactor, TRT model generates better steady laminar flow features all over the domain with better stability and reliability than LBGK-D2Q9 model especially when considering the compressible effects of the gas flow. The LBM-TRT is verified indirectly by comparing the numerical result with conventional continuum-based computational fluid dynamics solvers, and it shows very good agreement with these conventional methods. The velocity field of carrier gas flow through ALD vacuum reactor was characterized by LBM-TRT model finally. The flow in ALD is in a laminar steady state with velocity concentrated at the corners and around the wafer. The effects of flow fields on precursor distributions, surface absorptions, and surface reactions are discussed in detail. Steady and evenly distributed velocity field contribute to higher precursor concentration near the wafer and relatively lower particle velocities help to achieve better surface adsorption and deposition. The ALD reactor geometry needs to be considered carefully if a steady and laminar flow field around the wafer and better surface deposition are desired.

  14. Surface modification of nitrogen-doped carbon nanotubes by ozone via atomic layer deposition

    SciTech Connect (OSTI)

    Lushington, Andrew; Liu, Jian; Tang, Yongji; Li, Ruying; Sun, Xueliang, E-mail: xsun@eng.uwo.ca [Department of Mechanical and Materials Engineering, University of Western Ontario, London, Ontario N6A 5B9 (Canada)

    2014-01-15

    The use of ozone as an oxidizing agent for atomic layer deposition (ALD) processes is rapidly growing due to its strong oxidizing capabilities. However, the effect of ozone on nanostructured substrates such as nitrogen-doped multiwalled carbon nanotubes (NCNTs) and pristine multiwalled carbon nanotubes (PCNTs) are not very well understood and may provide an avenue toward functionalizing the carbon nanotube surface prior to deposition. The effects of ALD ozone treatment on NCNTs and PCNTs using 10?wt. % ozone at temperatures of 150, 250, and 300?C are studied. The effect of ozone pulse time and ALD cycle number on NCNTs and PCNTs was also investigated. Morphological changes to the substrate were observed by scanning electron microscopy and high resolution transmission electron microscopy. Brunauer-Emmett-Teller measurements were also conducted to determine surface area, pore size, and pore size distribution following ozone treatment. The graphitic nature of both NCNTs and PCNTs was determined using Raman analysis while x-ray photoelectron spectroscopy (XPS) was employed to probe the chemical nature of NCNTs. It was found that O{sub 3} attack occurs preferentially to the outermost geometric surface of NCNTs. Our research also revealed that the deleterious effects of ozone are found only on NCNTs while little or no damage occurs on PCNTs. Furthermore, XPS analysis indicated that ALD ozone treatment on NCNTs, at elevated temperatures, results in loss of nitrogen content. Our studies demonstrate that ALD ozone treatment is an effective avenue toward creating low nitrogen content, defect rich substrates for use in electrochemical applications and ALD of various metal/metal oxides.

  15. Nucleation and growth of MgO atomic layer deposition: A real-time spectroscopic ellipsometry study

    SciTech Connect (OSTI)

    Wang, Han; Fu, Kan

    2013-11-15

    The atomic layer deposition (ALD) of MgO thin films from bis(cyclopentadienyl) magnesium and H{sub 2}O was studied using in-situ real-time spectroscopic ellipsometry (SE), ex-situ x-ray photoelectron spectroscopy, and grazing-incidence x-ray diffraction. It is found that the initial growth is not linear during the first ten cycles, and magnesium silicate forms spontaneously on the SiO{sub 2}/Si substrates at 250 C. Submonolayer sensitivity of SE is demonstrated by the analysis of each half-cycle and self-limiting adsorption, revealing characteristic features of hetero- and homo-MgO ALD processes.

  16. Fluorine contamination in yttrium-doped barium zirconate film deposited by atomic layer deposition

    SciTech Connect (OSTI)

    An Jihwan; Beom Kim, Young; Sun Park, Joong; Hyung Shim, Joon; Guer, Turgut M.; Prinz, Fritz B.

    2012-01-15

    The authors have investigated the change of chemical composition, crystallinity, and ionic conductivity in fluorine contaminated yttrium-doped barium zirconate (BYZ) fabricated by atomic layer deposition (ALD). It has been identified that fluorine contamination can significantly affect the conductivity of the ALD BYZ. The authors have also successfully established the relationship between process temperature and contamination and the source of fluorine contamination, which was the perfluoroelastomer O-ring used for vacuum sealing. The total removal of fluorine contamination was achieved by using all-metal sealed chamber instead of O-ring seals.

  17. Impact of N{sub 2} and forming gas plasma exposure on the growth and interfacial characteristics of Al{sub 2}O{sub 3} on AlGaN

    SciTech Connect (OSTI)

    Qin, Xiaoye; Dong, Hong; Brennan, Barry; Azacatl, Angelica; Kim, Jiyoung; Wallace, Robert M.

    2013-11-25

    The interface and atomic layer deposition (ALD) of Al{sub 2}O{sub 3} on the annealed, N{sub 2} plasma and forming gas (N{sub 2}:H{sub 2}) exposed Al{sub 0.25}Ga{sub 0.75}N surface was studied using in situ X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. Exposure of the Al{sub 0.25}Ga{sub 0.75}N surface to the plasma treatments is able to remove spurious carbon, and readily facilitate uniform ALD Al{sub 2}O{sub 3} nucleation.

  18. Light-Material Interactions in Energy Conversion - Energy Frontier Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Center (LMI-EFRC) Cambridge Nanotech Atomic Layer Deposition A Cambridge Nanotech (USA) Savannah S200 atomic layer deposition (ALD) system was purchased for conformal growth of metal oxide films. ALD is the growth of films by sequential, self-limiting, surface chemical reactions and thus allows for precise thickness control. This system is capable of depositing nearly any metal oxide (e.g., TiO2, Al2O3) and is upgradable for metal sulfide deposition. This tool is housed in N. Lewis

  19. Infrared and thermoelectric power generation in thin atomic layer deposited Nb-doped TiO{sub 2} films

    SciTech Connect (OSTI)

    Mann, Harkirat S.; Lang, Brian N.; Schwab, Yosyp; Scarel, Giovanna; Niemelä, Janne-Petteri; Karppinen, Maarit

    2015-01-15

    Infrared radiation is used to radiatively transfer heat to a nanometric power generator (NPG) device with a thermoelectric Nb-doped TiO{sub 2} film deposited by atomic layer deposition (ALD) as the active element, onto a borosilicate glass substrate. The linear rise of the produced voltage with respect to the temperature difference between the “hot” and “cold” junctions, typical of the Seebeck effect, is missing. The discovery of the violation of the Seebeck effect in NPG devices combined with the ability of ALD to tune thermoelectric thin film properties could be exploited to increase the efficiency of these devices for energy harvesting purposes.

  20. Surface and interfacial reaction study of InAs(100)-crystalline oxide interface

    SciTech Connect (OSTI)

    Zhernokletov, D. M.; Laukkanen, P.; Dong, H.; Brennan, B.; Kim, J.; Galatage, R. V.; Yakimov, M.; Tokranov, V.; Oktyabrsky, S.; Wallace, R. M.; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080

    2013-05-27

    A crystalline oxide film on InAs(100) is investigated with in situ monochromatic x-ray photoelectron spectroscopy and low energy electron diffraction before and after in situ deposition of Al{sub 2}O{sub 3} by atomic layer deposition (ALD) as well as upon air exposure. The oxidation process leads to arsenic and indium trivalent oxidation state formation. The grown epitaxial oxide-InAs interface is stable upon ALD reactor exposure; however, trimethyl aluminum decreases oxidation states resulting in an unreconstructed surface. An increase in oxide concentration is also observed upon air exposure suggesting the crystalline oxide surface is unstable.

  1. Ensemble Jobs for Better Throughput Paul Rich Ray Loy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4 5 1024 2048 512 4K Mul,---block j ob ( one r unjob p er b lock) For j obs w ith t he s ame c haracteris0cs: h igher j ob s ize f aster s core i ncrease Sub---block runjobs 512...

  2. Biotechnology at the Cutting Edge - Keasling

    ScienceCinema (OSTI)

    Keasling, Jay

    2013-05-29

    Jay Keasling, Berkeley Lab ALD for Biosciences and CEO of the Joint BioEnergy Institute, appears in a video on biotechnology at the Smithsonian's National Museum of American History. The video is part of en exhibit titled "Science in American Life," which examines the relationship between science, technology, progress and culture through artifacts, historical photographs and multimedia technology.

  3. Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone

    SciTech Connect (OSTI)

    Kannan Selvaraj, Sathees; Feinerman, Alan; Takoudis, Christos G.

    2014-01-15

    In this work, a novel liquid tin(II) precursor, tin(II)acetylacetonate [Sn(acac){sub 2}], was used to deposit tin oxide films on Si(100) substrate, using a custom-built hot wall atomic layer deposition (ALD) reactor. Three different oxidizers, water, oxygen, and ozone, were tried. Resulting growth rates were studied as a function of precursor dosage, oxidizer dosage, reactor temperature, and number of ALD cycles. The film growth rate was found to be 0.1??0.01?nm/cycle within the wide ALD temperature window of 175300?C using ozone; no film growth was observed with water or oxygen. Characterization methods were used to study the composition, interface quality, crystallinity, microstructure, refractive index, surface morphology, and resistivity of the resulting films. X-ray photoelectron spectra showed the formation of a clean SnO{sub x}Si interface. The resistivity of the SnO{sub x} films was calculated to be 0.3?? cm. Results of this work demonstrate the possibility of introducing Sn(acac){sub 2} as tin precursor to deposit conducting ALD SnO{sub x} thin films on a silicon surface, with clean interface and no formation of undesired SiO{sub 2} or other interfacial reaction products, for transparent conducting oxide applications.

  4. Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

    SciTech Connect (OSTI)

    Gao, Feng; Arpiainen, Sanna; Puurunen, Riikka L.

    2015-01-15

    Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20–5000 μm) and cavity height (e.g., 200–1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25 000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al{sub 2}O{sub 3} and TiO{sub 2} processes from Me{sub 3}Al/H{sub 2}O and TiCl{sub 4}/H{sub 2}O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes.

  5. Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment

    SciTech Connect (OSTI)

    Steven Brandt, E.; Grace, Jeremy M.

    2012-01-15

    The role of surface hydroxyl content in atomic layer deposition (ALD) of aluminum oxide (AO) on polymers is demonstrated by performing an atomic layer deposition of AO onto a variety of polymer types, before and after pretreatment in a plasma struck in water vapor. The treatment and deposition reactions are performed in situ in a high vacuum chamber that is interfaced to an x-ray photoelectron spectrometer to prevent adventitious exposure to atmospheric contaminants. X-ray photoelectron spectroscopy is used to follow the surface chemistries of the polymers, including theformation of surface hydroxyls and subsequent growth of AO by ALD. Using dimethyl aluminum isopropoxide and water as reactants, ALD is obtained for water-plasma-treated poly(styrene) (PS), poly(propylene) (PP), poly(vinyl alcohol) (PVA), and poly(ethylene naphthalate) (PEN). For PS, PP, and PEN, initial growth rates of AO on the native (untreated) polymers are at least an order of magnitude lower than on the same polymer surface following the plasma treatment. By contrast, native PVA is shown to initiate ALD of AO as a result of the presence of intrinsic surface hydroxyls that are derived from the repeat unit of this polymer.

  6. Carbon Nanosheets and Nanostructured Electrodes in Organic Photovoltaic Devices: Cooperative Research and Development Final Report, CRADA Number CRD-08-321

    SciTech Connect (OSTI)

    Olson, D.

    2012-04-01

    Carbon nanosheet thin films were employed as nanostructured electrodes in organic solar cells. Due to the nanostructured texture of the carbon nanosheet electrodes, there was an increase in performance over standard ITO electrodes with very thick active layers. ZnO deposited via atomic layer deposition (ALD) was used as a hole blocking layer to provide for carrier selectivity of the carbon nanosheets.

  7. Biotechnology at the Cutting Edge - Keasling

    SciTech Connect (OSTI)

    Keasling, Jay

    2010-01-01

    Jay Keasling, Berkeley Lab ALD for Biosciences and CEO of the Joint BioEnergy Institute, appears in a video on biotechnology at the Smithsonian's National Museum of American History. The video is part of en exhibit titled "Science in American Life," which examines the relationship between science, technology, progress and culture through artifacts, historical photographs and multimedia technology.

  8. CO.

    Office of Legacy Management (LM)

    hcloscd in a-;.F' . - .T- m The radiologic?. survey report for thz Z.J, Lui;ont i;o:,:c:;,ours and Co. facility, a:ld - The L.1. Dupont DCieLOurS and Co. fscility Site Su:::ary. ...

  9. Directory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    09-765 Technical Abstract 09-765 Technical Abstract ALD Produced B2O3, Al2O3 and TiO2 Coatings on Gd2O3 Burnable Poison Nanoparticles (Properties) 61915 10:12 AM 61915 10:12 AM...

  10. Atomic Layer Deposition | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic Layer Deposition New nanophase thin film materials with properties tailored to specifically meet the needs of industry New software simulates ALD over multiple length scale, saving industry time and money on developing specialized tools PDF icon Atomic_Layer_Deposition

  11. Border trap reduction in Al{sub 2}O{sub 3}/InGaAs gate stacks

    SciTech Connect (OSTI)

    Tang, Kechao; McIntyre, Paul C.; Winter, Roy; Eizenberg, Moshe; Zhang, Liangliang; Droopad, Ravi

    2015-11-16

    The effect of Al{sub 2}O{sub 3} atomic layer deposition (ALD) temperature on the border trap density (N{sub bt}) of Al{sub 2}O{sub 3}/InGaAs gate stacks is investigated quantitatively, and we demonstrate that lowering the trimethylaluminum (TMA)/water vapor ALD temperature from 270 °C to 120 °C significantly reduces N{sub bt}. The reduction of N{sub bt} coincides with increased hydrogen incorporation in low temperature ALD-grown Al{sub 2}O{sub 3} films during post-gate metal forming gas annealing. It is also found that large-dose (∼6000 L) exposure of the In{sub 0.53}Ga{sub 0.47}As (100) surface to TMA immediately after thermal desorption of a protective As{sub 2} capping layer is an important step to guarantee the uniformity and reproducibility of high quality Al{sub 2}O{sub 3}/InGaAs samples made at low ALD temperatures.

  12. Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

    SciTech Connect (OSTI)

    Park, Jae-Hyung; Han, Dong-Suk; Kang, You-Jin; Shin, So-Ra; Park, Jong-Wan

    2014-01-15

    The authors synthesized a Cu–Al alloy by employing alternating atomic layer deposition (ALD) surface reactions using Cu and Al precursors, respectively. By alternating between these two ALD surface chemistries, the authors fabricated ALD Cu–Al alloy. Cu was deposited using bis(1-dimethylamino-2-methyl-2-butoxy) copper as a precursor and H{sub 2} plasma, while Al was deposited using trimethylaluminum as the precursor and H{sub 2} plasma. The Al atomic percent in the Cu–Al alloy films varied from 0 to 15.6 at. %. Transmission electron microscopy revealed that a uniform Al-based interlayer self-formed at the interface after annealing. To evaluate the barrier properties of the Al-based interlayer and adhesion between the Cu–Al alloy film and SiO{sub 2} dielectric, thermal stability and peel-off adhesion tests were performed, respectively. The Al-based interlayer showed similar thermal stability and adhesion to the reference Mn-based interlayer. Our results indicate that Cu–Al alloys formed by alternating ALD are suitable seed layer materials for Cu interconnects.

  13. Bottom-gate coplanar graphene transistors with enhanced graphene adhesion on atomic layer deposition Al{sub 2}O{sub 3}

    SciTech Connect (OSTI)

    Park, Dong-Wook; Mikael, Solomon; Chang, Tzu-Hsuan; Ma, Zhenqiang; Gong, Shaoqin

    2015-03-09

    A graphene transistor with a bottom-gate coplanar structure and an atomic layer deposition (ALD) aluminum oxide (Al{sub 2}O{sub 3}) gate dielectric is demonstrated. Wetting properties of ALD Al{sub 2}O{sub 3} under different deposition conditions are investigated by measuring the surface contact angle. It is observed that the relatively hydrophobic surface is suitable for adhesion between graphene and ALD Al{sub 2}O{sub 3}. To achieve hydrophobic surface of ALD Al{sub 2}O{sub 3}, a methyl group (CH{sub 3})-terminated deposition method has been developed and compared with a hydroxyl group (OH)-terminated deposition. Based on this approach, bottom-gate coplanar graphene field-effect transistors are fabricated and characterized. A post-thermal annealing process improves the performance of the transistors by enhancing the contacts between the source/drain metal and graphene. The fabricated transistor shows an I{sub on}/I{sub off} ratio, maximum transconductance, and field-effect mobility of 4.04, 20.1??S at V{sub D}?=?0.1?V, and 249.5?cm{sup 2}/Vs, respectively.

  14. Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

    SciTech Connect (OSTI)

    Van Bui, Hao Wiggers, Frank B.; Gupta, Anubha; Nguyen, Minh D.; Aarnink, Antonius A. I.; Jong, Michel P. de; Kovalgin, Alexey Y.

    2015-01-01

    The authors have studied and compared the initial growth and properties of AlN films deposited on Si(111) by thermal and plasma-enhanced atomic layer deposition (ALD) using trimethylaluminum and either ammonia or a N{sub 2}-H{sub 2} mixture as precursors. In-situ spectroscopic ellipsometry was employed to monitor the growth and measure the refractive index of the films during the deposition. The authors found that an incubation stage only occurred for thermal ALD. The linear growth for plasma-enhanced ALD (PEALD) started instantly from the beginning due to the higher nuclei density provided by the presence of plasma. The authors observed the evolution of the refractive index of AlN during the growth, which showed a rapid increase up to a thickness of about 30?nm followed by a saturation. Below this thickness, higher refractive index values were obtained for AlN films grown by PEALD, whereas above that the refractive index was slightly higher for thermal ALD films. X-ray diffraction characterization showed a wurtzite crystalline structure with a (101{sup }0) preferential orientation obtained for all the layers with a slightly better crystallinity for films grown by PEALD.

  15. In situ study of the role of substrate temperature during atomic layer deposition of HfO{sub 2} on InP

    SciTech Connect (OSTI)

    Dong, H.; Santosh, K.C.; Qin, X.; Brennan, B.; McDonnell, S.; Kim, J.; Zhernokletov, D.; Hinkle, C. L.; Cho, K.; Wallace, R. M.; Department of Physics, University of Texas at Dallas, Richardson, Texas 75080

    2013-10-21

    The dependence of the “self cleaning” effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO{sub 2} on various chemically treated and native oxide InP (100) substrates is investigated using in situ X-ray photoelectron spectroscopy. The removal of In-oxide is found to be more efficient at higher ALD temperatures. The P oxidation states on native oxide and acid etched samples are seen to change, with the total P-oxide concentration remaining constant, after 10 cycles of ALD HfO{sub 2} at different temperatures. An (NH{sub 4}){sub 2} S treatment is seen to effectively remove native oxides and passivate the InP surfaces independent of substrate temperature studied (200 °C, 250 °C and 300 °C) before and after the ALD process. Density functional theory modeling provides insight into the mechanism of the changes in the P-oxide chemical states.

  16. Coating Strategies to Improve Lithium-ion Battery Safety

    SciTech Connect (OSTI)

    Travis, Jonathan; Orendorff, Christopher J.

    2015-09-01

    This work investigated the effects of Al2O3 ALD coatings on the performance and thermal abuse tolerance of graphite based anodes and Li(NixMnyCoz)O2 (NMC) based cathodes. It was found that 5 cycles of Al2O3 ALD on the graphite anode increased the onset temperature of thermal runaway by approximately 20 °C and drastically reduced the anode’s contribution to the overall amount of heat released during thermal runaway. Although Al2O3 ALD improves the cycling stability of NMC based cathodes, the thermal abuse tolerance was not greatly improved. A series of conductive aluminum oxide/carbon composites were created and characterized as potential thicker protective coatings for use on NMC based cathode materials. A series of electrodes were coated with manganese monoxide ALD to test the efficacy of an oxygen scavenging coating on NMC based cathodes.

  17. Flexible Ultra Moisture Barrier Film for Thin-Film Photovoltaic Applications

    SciTech Connect (OSTI)

    David M. Dean

    2012-10-30

    Flexible Thin-film photovoltaic (TFPV) is a low cost alternative to incumbent c-Si PV products as it requires less volume of costly semiconductor materials and it can potentially reduce installation cost. Among the TFPV options, copper indium gallium diselenide (CIGS) has the highest efficiency and is believed to be one of the most attractive candidates to achieve PV cost reduction. However, CIGS cells are very moisture sensitive and require module water vapor transmission rate (WVTR) of less than 1x10-4 gram of water per square meter per day (g-H2O/m2/day). Successful development and commercialization of flexible transparent ultra moisture barrier film is the key to enable flexible CIGS TFPV products, and thus enable ultimate PV cost reduction. At DuPont, we have demonstrated at lab scale that we can successfully make polymer-based flexible transparent ultra moisture barrier film by depositing alumina on polymer films using atomic layer deposition (ALD) technology. The layer by layer ALD approach results in uniform and amorphous structure which effectively reduces pinhole density of the inorganic coating on the polymer, and thus allow the fabrication of flexible barrier film with WVTR of 10-5 g-H2O/m2/day. Currently ALD is a time-consuming process suitable only for high-value, relatively small substrates. To successfully commercialize the ALD-on-plastic technology for the PV industry, there is the need to scale up this technology and improve throughput. The goal of this contract work was to build a prototype demonstrating that the ALD technology could be scaled-up for commercial use. Unfortunately, the prototype failed to produce an ultra-barrier film by the close of the project.

  18. Energy Technology Division research summary - 1999.

    SciTech Connect (OSTI)

    1999-03-31

    The Energy Technology Division provides materials and engineering technology support to a wide range of programs important to the US Department of Energy. As shown on the preceding page, the Division is organized into ten sections, five with concentrations in the materials area and five in engineering technology. Materials expertise includes fabrication, mechanical properties, corrosion, friction and lubrication, and irradiation effects. Our major engineering strengths are in heat and mass flow, sensors and instrumentation, nondestructive testing, transportation, and electromechanics and superconductivity applications. The Division Safety Coordinator, Environmental Compliance Officers, Quality Assurance Representative, Financial Administrator, and Communication Coordinator report directly to the Division Director. The Division Director is personally responsible for cultural diversity and is a member of the Laboratory-wide Cultural Diversity Advisory Committee. The Division's capabilities are generally applied to issues associated with energy production, transportation, utilization, or conservation, or with environmental issues linked to energy. As shown in the organization chart on the next page, the Division reports administratively to the Associate Laboratory Director (ALD) for Energy and Environmental Science and Technology (EEST) through the General Manager for Environmental and Industrial Technologies. While most of our programs are under the purview of the EEST ALD, we also have had programs funded under every one of the ALDs. Some of our research in superconductivity is funded through the Physical Research Program ALD. We also continue to work on a number of nuclear-energy-related programs under the ALD for Engineering Research. Detailed descriptions of our programs on a section-by-section basis are provided in the remainder of this book.

  19. Waterless TiO{sub 2} atomic layer deposition using titanium tetrachloride and titanium tetraisopropoxide

    SciTech Connect (OSTI)

    Anderson, Virginia R.; Cavanagh, Andrew S.; Abdulagatov, Aziz I.; Gibbs, Zachary M.; George, Steven M.

    2014-01-15

    The surface chemistry for TiO{sub 2} atomic layer deposition (ALD) typically utilizes water or other oxidants that can oxidize underlying substrates such as magnetic disks or semiconductors. To avoid this oxidation, waterless or oxidant-free surface chemistry can be used that involves titanium halides and titanium alkoxides. In this study, waterless TiO{sub 2} ALD was accomplished using titanium tetrachloride (TiCl{sub 4}) and titanium tetraisopropoxide (TTIP). In situ transmission Fourier transform infrared (FTIR) studies were employed to study the surface species and the reactions during waterless TiO{sub 2} ALD. At low temperatures between 125 and 225  °C, the FTIR absorbance spectra revealed that the isopropoxide species remained on the surface after TTIP exposures. The TiCl{sub 4} exposures then removed the isopropoxide species and deposited additional titanium species. At high temperatures between 250 and 300  °C, the isopropoxide species were converted to hydroxyl species by β-hydride elimination. The observation of propene gaseous reaction product by quadrupole mass spectrometry (QMS) confirmed the β-hydride elimination reaction pathway. The TiCl{sub 4} exposures then easily reacted with the hydroxyl species. QMS studies also observed the 2-chloropropane and HCl gaseous reaction products and monitored the self-limiting nature of the TTIP reaction. Additional studies examined the waterless TiO{sub 2} ALD growth at low and high temperature. Quartz crystal microbalance measurements observed growth rates of ∼3 ng/cm{sup 2} at a low temperature of 150  °C. Much higher growth rates of ∼15 ng/cm{sup 2} were measured at a higher temperature of 250  °C under similar reaction conditions. X-ray reflectivity analysis measured a growth rate of 0.55 ± 0.05 Å/cycle at 250  °C. X-ray photoelectron depth-profile studies showed that the TiO{sub 2} films contained low Cl concentrations <1 at. %. This waterless TiO{sub 2} ALD process

  20. Isotope analysis of diamond-surface passivation effect of high-temperature H{sub 2}O-grown atomic layer deposition-Al{sub 2}O{sub 3} films

    SciTech Connect (OSTI)

    Hiraiwa, Atsushi E-mail: qs4a-hriw@asahi-net.or.jp; Saito, Tatsuya; Matsumura, Daisuke; Kawarada, Hiroshi

    2015-06-07

    The Al{sub 2}O{sub 3} film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H{sub 2}O as oxidant at a high temperature (450?C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400?C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D{sub 2}O instead of H{sub 2}O in the ALD and found that the Al{sub 2}O{sub 3} film formed at a conventional temperature (100?C) incorporates 50 times more CH{sub 3} groups than the high-temperature film. This CH{sub 3} is supposed to dissociate from the film when heated afterwards at a higher temperature (550?C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H{sub 2}O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H{sub 2}O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D{sub 2}O-oxidant ALD but found that the mass density and dielectric constant of D{sub 2}O-grown Al{sub 2}O{sub 3} films are smaller than those of H{sub 2}O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al{sub 2}O{sub 3} films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the knowledge of the

  1. Advisory Board Members

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Call for Proposals Submit Proposals Research Subject Areas Types of Proposals Funding for Projects Evaluation and Selection Acceptance and Rejection Deadlines Events Partnerships NSEC » CSES » Advisory Boards Advisory Board Members High quality, cutting-edge science in the areas of astrophysics, space physics, solid planetary geoscience, and climate science. External Richard Aster New Mexico Tech George Fuller UC San Diego Brian McPherson University of Utah Mike Liemohn University of Michigan

  2. Multilayer moisture barrier

    DOE Patents [OSTI]

    Pankow, Joel W; Jorgensen, Gary J; Terwilliger, Kent M; Glick, Stephen H; Isomaki, Nora; Harkonen, Kari; Turkulainen, Tommy

    2015-04-21

    A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, Al.sub.2O.sub.3, AlSiO.sub.x, TiO.sub.2, and an Al.sub.2O.sub.3/TiO.sub.2 laminate. The barrier layer associated with the interfacial layer may be deposited by plasma enhanced chemical vapor deposition (PECVD). The barrier layer may be a SiO.sub.xN.sub.y film.

  3. Synthesis and Understanding of Novel Catalysts

    SciTech Connect (OSTI)

    Stair, Peter C.

    2013-07-09

    The research took advantage of our capabilities to perform in-situ and operando Raman spectroscopy on complex systems along with our developing expertise in the synthesis of uniform, supported metal oxide materials to investigate relationships between the catalytically active oxide composition, atomic structure, and support and the corresponding chemical and catalytic properties. The project was organized into two efforts: 1) Synthesis of novel catalyst materials by atomic layer deposition (ALD). 2) Spectroscopic and chemical investigations of coke formation and catalyst deactivation. ALD synthesis was combined with conventional physical characterization, Raman spectroscopy, and probe molecule chemisorption to study the effect of supported metal oxide composition and atomic structure on acid-base and catalytic properties. Operando Raman spectroscopy studies of olefin polymerization leading to coke formation and catalyst deactivation clarified the mechanism of coke formation by acid catalysts.

  4. Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al{sub 2}O{sub 3} on GaSb(100)

    SciTech Connect (OSTI)

    Zhernokletov, Dmitry M.; Dong, Hong; Brennan, Barry; Kim, Jiyoung; Wallace, Robert M.; Yakimov, Michael; Tokranov, Vadim; Oktyabrsky, Serge

    2013-11-15

    In-situ monochromatic x-ray photoelectron spectroscopy, low energy electron diffraction, ion scattering spectroscopy, and transmission electron microscopy are used to examine the GaSb(100) surfaces grown by molecular beam epitaxy after thermal desorption of a protective As or Sb layer and subsequent atomic layer deposition (ALD) of Al{sub 2}O{sub 3}. An antimony protective layer is found to be more favorable compared to an arsenic capping layer as it prevents As alloys from forming with the GaSb substrate. The evolution of oxide free GaSb/Al{sub 2}O{sub 3} interface is investigated by “half-cycle” ALD reactions of trimethyl aluminum and deionized water.

  5. Atomic layer deposition of zinc sulfide with Zn(TMHD){sub 2}

    SciTech Connect (OSTI)

    Short, Andrew; Jewell, Leila; Doshay, Sage; Church, Carena; Keiber, Trevor; Bridges, Frank; Carter, Sue; Alers, Glenn

    2013-01-15

    The atomic layer deposition (ALD) of ZnS films with Zn(TMHD){sub 2} and in situ generated H{sub 2}S as precursors was investigated, over a temperature range of 150-375 Degree-Sign C. ALD behavior was confirmed by investigation of growth behavior and saturation curves. The properties of the films were studied with atomic force microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy, ultraviolet-visible-infrared spectroscopy, and extended x-ray absorption fine structure. The results demonstrate a film that can penetrate a porous matrix, with a local Zn structure of bulk ZnS, and a band gap between 3.5 and 3.6 eV. The ZnS film was used as a buffer layer in nanostructured PbS quantum dot solar cell devices.

  6. Electrocatalysts by atomic layer deposition for fuel cell applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cheng, Niancai; Shao, Yuyan; Liu, Jun; Sun, Xueliang

    2016-01-22

    Here, fuel cells are a promising technology solution for reliable and clean energy because they offer high energy conversion efficiency and low emission of pollutants. However, high cost and insufficient durability are considerable challenges for widespread adoption of polymer electrolyte membrane fuel cells (PEMFCs) in practical applications. Current PEMFCs catalysts have been identified as major contributors to both the high cost and limited durability. Atomic layer deposition (ALD) is emerging as a powerful technique for solving these problems due to its exclusive advantages over other methods. In this review, we summarize recent developments of ALD in PEMFCs with a focusmore » on design of materials for improved catalyst activity and durability. New research directions and future trends have also been discussed.« less

  7. Infrared study on room-temperature atomic layer deposition of HfO{sub 2} using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents

    SciTech Connect (OSTI)

    Kanomata, Kensaku [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510, Japan and Japan Society for the Promotion of Science, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Ohba, Hisashi; Pungboon Pansila, P.; Ahmmad, Bashir; Kubota, Shigeru; Hirahara, Kazuhiro; Hirose, Fumihiko, E-mail: fhirose@yz.yamagata-u.ac.jp [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510 (Japan)

    2015-01-01

    Room-temperature atomic layer deposition (ALD) of HfO{sub 2} was examined using tetrakis (ethylmethylamino)hafnium (TEMAH) and remote plasma-excited water and oxygen. A growth rate of 0.26?nm/cycle at room temperature was achieved, and the TEMAH adsorption and its oxidization on HfO{sub 2} were investigated by multiple internal reflection infrared absorption spectroscopy. It was observed that saturated adsorption of TEMAH occurs at exposures of ?1??10{sup 5}?L (1 L?=?1??10{sup ?6} Torr s) at room temperature, and the use of remote plasma-excited water and oxygen vapor is effective in oxidizing the TEMAH molecules on the HfO{sub 2} surface, to produce OH sites. The infrared study suggested that HfOH plays a role as an adsorption site for TEMAH. The reaction mechanism of room temperature HfO{sub 2} ALD is discussed in this paper.

  8. Designing optical metamaterial with hyperbolic dispersion based on Al:ZnO/ZnO nano-layered structure using Atomic Layer Deposition technique

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kelly, Priscilla; Liu, Mingzhao; Kuznetsova, Lyuba

    2016-04-07

    In this study, nano-layered Al:ZnO/ZnO hyperbolic dispersion metamaterial with a large number of layers was fabricated using the atomic layer deposition (ALD) technique. Experimental dielectric functions for Al:ZnO/ZnO structures are obtained by an ellipsometry technique in the visible and near-infrared spectral ranges. The theoretical modeling of the Al:ZnO/ZnO dielectric permittivity is done using effective medium approximation. A method for analysis of spectroscopic ellipsometry data is demonstrated to extract the optical permittivity for this highly anisotropic nano-layered metamaterial. The results of the ellipsometry analysis show that Al:ZnO/ZnO structures with a 1:9 ALD cycle ratio exhibit hyperbolic dispersion transition change near 1.8more » μm wavelength.« less

  9. Ultra-thin microporous/hybrid materials

    DOE Patents [OSTI]

    Jiang, Ying-Bing; Cecchi, Joseph L.; Brinker, C. Jeffrey

    2012-05-29

    Ultra-thin hybrid and/or microporous materials and methods for their fabrication are provided. In one embodiment, the exemplary hybrid membranes can be formed including successive surface activation and reaction steps on a porous support that is patterned or non-patterned. The surface activation can be performed using remote plasma exposure to locally activate the exterior surfaces of porous support. Organic/inorganic hybrid precursors such as organometallic silane precursors can be condensed on the locally activated exterior surfaces, whereby ALD reactions can then take place between the condensed hybrid precursors and a reactant. Various embodiments can also include an intermittent replacement of ALD precursors during the membrane formation so as to enhance the hybrid molecular network of the membranes.

  10. Ultra-low loading Pt nanocatalysts prepared by atomic layer deposition on carbon aerogels

    SciTech Connect (OSTI)

    King, J S; Wittstock, A; Biener, J; Kucheyev, S O; Wang, Y M; Baumann, T F; Giri, S; Hamza, A V; Baeumer, M; Bent, S F

    2008-04-21

    Using atomic layer deposition (ALD), we show that Pt nanoparticles can be deposited on the inner surfaces of carbon aerogels (CA). The resultant Pt-loaded materials exhibit high catalytic activity for the oxidation of CO even at loading levels as low as {approx}0.05 mg Pt/cm{sup 2}. We observe a conversion efficiency of nearly 100% in the temperatures range 150-250 C, and the total conversion rate seems to be only limited by the thermal stability of our CA support in ambient oxygen. Our ALD approach described here is universal in nature, and can be applied to the design of new catalytic materials for a variety of applications, including fuel cells, hydrogen storage, pollution control, green chemistry, and liquid fuel production.

  11. Resistive switching phenomena in TiO{sub x} nanoparticle layers for memory applications

    SciTech Connect (OSTI)

    Goren, Emanuelle; Tsur, Yoed; Ungureanu, Mariana; Zazpe, Raul; Rozenberg, Marcelo; Hueso, Luis E.; Casanova, Flix; Stoliar, Pablo

    2014-10-06

    Electrical characteristics of a Co/ TiO{sub x}/Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO{sub 2} layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO{sub x} nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.

  12. Displacement of Hexanol by the Hexanoic Acid Overoxidation Product in Alcohol Oxidation on a Model Supported Palladium Nanoparticle Catalyst

    SciTech Connect (OSTI)

    Buchbinder, Avram M. [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; Center for Catalysis and Surface Science; Inst. for Catalysis in Energy Processes; Ray, Natalie A. [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; Center for Catalysis and Surface Science; Lu, Junling [Argonne National Lab. (ANL), Argonne, IL (United States). Energy System Division; Van Duyne, Richard P. [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; Center for Catalysis and Surface Science; Inst. for Catalysis in Energy Processes; Stair, Peter C. [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; Center for Catalysis and Surface Science; Inst. for Catalysis in Energy Processes; Argonne National Lab. (ANL), Argonne, IL (United States). Chemical Sciences and Engineering Division; Weitz, Eric [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; Center for Catalysis and Surface Science; Inst. for Catalysis in Energy Processes; Geiger, Franz M. [Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry; Center for Catalysis and Surface Science; Inst. for Catalysis in Energy Processes

    2011-11-09

    This work characterizes the adsorption, structure, and binding mechanism of oxygenated organic species from cyclohexane solution at the liquid/solid interface of optically flat alumina-supported palladium nanoparticle surfaces prepared by atomic layer deposition (ALD). The surface-specific nonlinear optical vibrational spectroscopy, sum-frequency generation (SFG), was used as a probe for adsorption and interfacial molecular structure. 1-Hexanoic acid is an overoxidation product and possible catalyst poison for the aerobic heterogeneous oxidation of 1-hexanol at the liquid/solid interface of Pd/Al?O? catalysts. Single component and competitive adsorption experiments show that 1-hexanoic acid adsorbs to both ALD-prepared alumina surfaces and alumina surfaces with palladium nanoparticles, that were also prepared by ALD, more strongly than does 1-hexanol. Furthermore, 1-hexanoic acid adsorbs with conformational order on ALD-prepared alumina surfaces, but on surfaces with palladium particles the adsorbates exhibit relative disorder at low surface coverage and become more ordered, on average, at higher surface coverage. Although significant differences in binding constant were not observed between surfaces with and without palladium nanoparticles, the palladium particles play an apparent role in controlling adsorbate structures. The disordered adsorption of 1-hexanoic acid most likely occurs on the alumina support, and probably results from modification of binding sites on the alumina, adjacent to the particles. In addition to providing insight on the possibility of catalyst poisoning by the overoxidation product and characterizing changes in its structure that result in only small adsorption energy changes, this work represents a step toward using surface science techniques that bridge the complexity gap between fundamental studies and realistic catalyst models.

  13. Energy Frontier Research Centers | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The above figure depicts an ALD-Modified "Rust" Surface for enhanced electrode activity. Energy Frontier Research Centers Argonne pulls together science and engineering leaders across institutional boundaries, allowing them to take a collaborative approach to specific scientific challenges. In 2009, the U.S. Department of Energy's Office of Science/Office of Basic Energy Sciences established the Energy Frontier Research Centers (EFRCs). These EFRCs are composed of small teams of

  14. Atomic layer deposition grown MO{sub x} thin films for solar water splitting: Prospects and challenges

    SciTech Connect (OSTI)

    Singh, Trilok; Lehnen, Thomas; Leuning, Tessa; Mathur, Sanjay

    2015-01-15

    The magnitude of energy challenge not only calls for efficient devices but also for abundant, inexpensive, and stable photoactive materials that can enable efficient light harvesting, charge separation and collection, as well as chemical transformations. Photoelectrochemical systems based on semiconductor materials have the possibility to transform solar energy directly into chemical energy the so-called “solar hydrogen.” The current challenge lies in the harvesting of a larger fraction of electromagnetic spectrum by enhancing the absorbance of electrode materials. In this context, atomically precise thin films of metal oxide semiconductors and their multilayered junctions are promising candidates to integrate high surface areas with well-defined electrode–substrate interface. Given its self-limited growth mechanism, the atomic layer deposition (ALD) technique offers a wide range of capabilities to deposit and modify materials at the nanoscale. In addition, it opens new frontiers for developing precursor chemistry that is inevitable to design new processes. Herein, the authors review the properties and potential of metal oxide thin films deposited by ALD for their application in photoelectrochemical water splitting application. The first part of the review covers the basics of ALD processes followed by a brief discussion on the electrochemistry of water splitting reaction. The second part focuses on different MO{sub x} films deposited by atomic layer deposition for water splitting applications; in this section, The authors discuss the most explored MO{sub x} semiconductors, namely, Fe{sub 2}O{sub 3}, TiO{sub 2}, WO{sub 3}, and ZnO, as active materials and refer to their application as protective coatings, conductive scaffolds, or in heterojunctions. The third part deals with the current challenges and future prospects of ALD processed MO{sub x} thin films for water splitting reactions.

  15. LDRD Project 52523 final report :Atomic layer deposition of highly conformal tribological coatings.

    SciTech Connect (OSTI)

    Jungk, John Michael (University of Minnesota); Dugger, Michael Thomas; George, Steve M. (University of Colorado); Prasad, Somuri V.; Grubbs, Robert K.; Moody, Neville Reid; Mayer, Thomas Michael; Scharf, Thomas W.; Goeke, Ronald S.; Gerberich, William W. (University of Minnesota)

    2005-10-01

    Friction and wear are major concerns in the performance and reliability of micromechanical (MEMS) devices. While a variety of lubricant and wear resistant coatings are known which we might consider for application to MEMS devices, the severe geometric constraints of many micromechanical systems (high aspect ratios, shadowed surfaces) make most deposition methods for friction and wear-resistance coatings impossible. In this program we have produced and evaluate highly conformal, tribological coatings, deposited by atomic layer deposition (ALD), for use on surface micromachined (SMM) and LIGA structures. ALD is a chemical vapor deposition process using sequential exposure of reagents and self-limiting surface chemistry, saturating at a maximum of one monolayer per exposure cycle. The self-limiting chemistry results in conformal coating of high aspect ratio structures, with monolayer precision. ALD of a wide variety of materials is possible, but there have been no studies of structural, mechanical, and tribological properties of these films. We have developed processes for depositing thin (<100 nm) conformal coatings of selected hard and lubricious films (Al2O3, ZnO, WS2, W, and W/Al{sub 2}O{sub 3} nanolaminates), and measured their chemical, physical, mechanical and tribological properties. A significant challenge in this program was to develop instrumentation and quantitative test procedures, which did not exist, for friction, wear, film/substrate adhesion, elastic properties, stress, etc., of extremely thin films and nanolaminates. New scanning probe and nanoindentation techniques have been employed along with detailed mechanics-based models to evaluate these properties at small loads characteristic of microsystem operation. We emphasize deposition processes and fundamental properties of ALD materials, however we have also evaluated applications and film performance for model SMM and LIGA devices.

  16. 2015 Annual Merit Review, Vehicle Technologies Office

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    D One dimensional 3D Three dimensional A/C Air-Conditioning ABR Advanced Battery Research AC Alternating current ACE Advanced combustion engine ACEC Advanced Combustion and Emissions Control ADP Advanced drying process AEC Automotive Electronics Council AEC Advanced Engine Combustion AFCI Advanced Fuel Cycle Initiative AFDC Alternative Fuels Data Center AFR Air to fuel ratio AFV Alternative fuel vehicle Ah Ampere-hour AKI Anti-knock index Al Aluminum ALD Atomic Layer Deposition AlF 3 Aluminum

  17. Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Ozone | Argonne National Laboratory Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone Title Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone Publication Type Journal Article Year of Publication 2016 Authors Mane, AU, Allen, AJ, Kanjolia, RK, Elam, JW Journal Journal of Physical Chemistry C Volume 120 Start Page 9874 Issue 18 Pagination 10 Date Published 04182016 Abstract We investigated the atomic layer deposition (ALD)

  18. Precise Application of Transparent Conductive Oxide Coatings for Flat Panel

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Displays and Photovoltaic Cells | Argonne National Laboratory Precise Application of Transparent Conductive Oxide Coatings for Flat Panel Displays and Photovoltaic Cells Technology available for licensing: New transparent conducting oxide (TCO) coatings are deposited using atomic layer deposition (ALD). Provides uniform coating of complex, 3D nanostructures such as electrodes for next-generation PV cells Improved coating precision uses less material and reduces cost PDF icon

  19. Postdoctoral Extension Procedures | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Extension Procedures The Postdoctoral Office at DEP is responsible for processing the postdoctoral appointment extensions. It is important that all Argonne programmatic divisions understand and follow the protocol established to that effect. This document summarizes the procedures and intends to clarify some questions, thus avoiding delays in the process. The procedure, already accepted by the ALD offices across the Laboratory, is as follows: DEP will indicate to the Divisions (two months in

  20. Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition

    SciTech Connect (OSTI)

    Haider, Ali; Kayaci, Fatma; Uyar, Tamer; Biyikli, Necmi; Ozgit-Akgun, Cagla; Okyay, Ali Kemal

    2014-09-01

    Aluminum nitride (AlN)/boron nitride (BN) bishell hollow nanofibers (HNFs) have been fabricated by successive atomic layer deposition (ALD) of AlN and sequential chemical vapor deposition (CVD) of BN on electrospun polymeric nanofibrous template. A four-step fabrication process was utilized: (i) fabrication of polymeric (nylon 6,6) nanofibers via electrospinning, (ii) hollow cathode plasma-assisted ALD of AlN at 100?C onto electrospun polymeric nanofibers, (iii) calcination at 500?C for 2 h in order to remove the polymeric template, and (iv) sequential CVD growth of BN at 450?C. AlN/BN HNFs have been characterized for their chemical composition, surface morphology, crystal structure, and internal nanostructure using X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy, and selected area electron diffraction. Measurements confirmed the presence of crystalline hexagonal BN and AlN within the three dimensional (3D) network of bishell HNFs with relatively low impurity content. In contrast to the smooth surface of the inner AlN layer, outer BN coating showed a highly rough 3D morphology in the form of BN nano-needle crystallites. It is shown that the combination of electrospinning and plasma-assisted low-temperature ALD/CVD can produce highly controlled multi-layered bishell nitride ceramic hollow nanostructures. While electrospinning enables easy fabrication of nanofibrous template, self-limiting reactions of plasma-assisted ALD and sequential CVD provide control over the wall thicknesses of AlN and BN layers with sub-nanometer accuracy.

  1. Controlled Phase and Tunable Magnetism in Ordered Iron Oxide Nanotube Arrays Prepared by Atomic Layer Deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Yijun; Liu, Ming; Peng, Bin; Zhou, Ziyao; Chen, Xing; Yang, Shu-Ming; Jiang, Zhuang-De; Zhang, Jie; Ren, Wei; Ye, Zuo-Guang

    2016-01-27

    Highly-ordered and conformal iron oxide nanotube arrays on an atomic scale are successfully prepared by atomic layer deposition (ALD) with controlled oxidization states and tunable magnetic properties between superparamagnetism and ferrimagnetism. Non-magnetic α-Fe2O3 and superparamagnetic Fe2O3with a blocking temperature of 120 K are in-situ obtained by finely controlling the oxidation reaction. Both of them exhibit a very small grain size of only several nanometers due to the nature of atom-by-atom growth of the ALD technique. Post-annealing α-Fe2O3 in a reducing atmosphere leads to the formation of the spinel Fe3O4 phase which displays a distinct ferrimagnetic anisotropy and the Verwey metal-insulatormore » transition that usually takes place only in single crystal magnetite or thick epitaxial films at low temperatures. Finally, the ALD deposition of iron oxide with well-controlled phase and tunable magnetism demonstrated in this work provides a promising opportunity for the fabrication of 3D nano-devices to be used in catalysis, spintronics, microelectronics, data storages and bio-applications.« less

  2. Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

    SciTech Connect (OSTI)

    Ruppalt, Laura B. Cleveland, Erin R.; Champlain, James G.; Bennett, Brian R.; Prokes, Sharka M.

    2014-12-15

    In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD) high-k dielectric stacks with device-quality p-type GaSb(001) epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H{sub 2}/Ar plasma treatment and subsequently removed to air. High-k HfO{sub 2} and Al{sub 2}O{sub 3}/HfO{sub 2} bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS) capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H{sub 2}-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H{sub 2}-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

  3. Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

    SciTech Connect (OSTI)

    Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A.

    2015-07-28

    Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

  4. Shape-selective catalysts for Fischer-Tropsch chemistry. Final report : January 1, 2001 - December 31, 2008.

    SciTech Connect (OSTI)

    Cronauer, D. C.

    2011-04-11

    Argonne National Laboratory carried out a research program to create, prepare, and evaluate catalysts to promote Fischer-Tropsch (FT) chemistry-specifically, the reaction of hydrogen with carbon monoxide to form long-chain hydrocarbons. In addition to needing high activity, it was desirable that the catalysts have high selectivity and stability with respect to both mechanical strength and aging properties. It was desired that selectivity be directed toward producing diesel fraction components and avoiding excess yields of both light hydrocarbons and heavy waxes. The original goal was to produce shape-selective catalysts that had the potential to limit the formation of long-chain products and yet retain the active metal sites in a protected 'cage.' This cage would also restrict their loss by attrition during use in slurry-bed reactors. The first stage of this program was to prepare and evaluate iron-containing particulate catalysts. Such catalysts were prepared with silica-containing fractal cages. The activity and strength was essentially the same as that of catalysts without the cages. Since there was no improvement, the program plan was modified as discussed below. A second experimental stage was undertaken to prepare and evaluate active FT catalysts formed by atomic-layer deposition [ALD] of active components on supported membranes and particulate supports. The concept was that of depositing active metals (i.e. ruthenium, iron or cobalt) upon membranes with well defined flow channels of small diameter and length such that the catalytic activity and product molecular weight distribution could be controlled. In order to rapidly evaluate the catalytic membranes, the ALD coating processes were performed in an 'exploratory mode' in which ALD procedures from the literature appropriate for coating flat surfaces were applied to the high surface area membranes. Consequently, the Fe and Ru loadings in the membranes were likely to be smaller than those expected for

  5. Synthesis of Pt–Pd Core–Shell Nanostructures by Atomic Layer Deposition: Application in Propane Oxidative Dehydrogenation to Propylene

    SciTech Connect (OSTI)

    Lei, Yu; Liu, Bin; Lu, Junling; Lobo-Lapidus, Rodrigo J.; Wu, Tianpin; Feng, Hao; Xia, Xiaoxing; Mane, Anil U.; Libera, Joseph A.; Greeley, Jeffrey P.; Miller, Jeffrey T.; Elam, Jeffrey W.

    2012-08-20

    Atomic layer deposition (ALD) was employed to synthesize supported Pt–Pd bimetallic particles in the 1 to 2 nm range. The metal loading and composition of the supported Pt–Pd nanoparticles were controlled by varying the deposition temperature and by applying ALD metal oxide coatings to modify the support surface chemistry. High-resolution scanning transmission electron microscopy images showed monodispersed Pt–Pd nanoparticles on ALD Al2O3- and TiO2-modified SiO2 gel. X-ray absorption spectroscopy revealed that the bimetallic nanoparticles have a stable Pt-core, Pd-shell nanostructure. Density functional theory calculations revealed that the most stable surface configuration for the Pt–Pd alloys in an H2 environment has a Pt-core, Pd-shell nanostructure. Finally, in comparison to their monometallic counterparts, the small Pt–Pd bimetallic core–shell nanoparticles exhibited higher activity in propane oxidative dehydrogenation as compared to their physical mixture.

  6. Work function tuning of plasma-enhanced atomic layer deposited WC{sub x}N{sub y} electrodes for metal/oxide/semiconductor devices

    SciTech Connect (OSTI)

    Zonensain, Oren; Fadida, Sivan; Eizenberg, Moshe; Fisher, Ilanit; Gao, Juwen; Chattopadhyay, Kaushik; Harm, Greg; Mountsier, Tom; Danek, Michal

    2015-02-23

    One of the main challenges facing the integration of metals as gate electrodes in advanced MOS devices is control over the Fermi level position at the metal/dielectric interface. In this study, we demonstrate the ability to tune the effective work function (EWF) of W-based electrodes by process modifications of the atomic layer deposited (ALD) films. Tungsten carbo-nitrides (WC{sub x}N{sub y}) films were deposited via plasma-enhanced and/or thermal ALD processes using organometallic precursors. The process modifications enabled us to control the stoichiometry of the WC{sub x}N{sub y} films. Deposition in hydrogen plasma (without nitrogen based reactant) resulted in a stoichiometry of WC{sub 0.4} with primarily W-C chemical bonding, as determined by x-ray photoelectron spectroscopy. These films yielded a relatively low EWF of 4.2 ± 0.1 eV. The introduction of nitrogen based reactant to the plasma or the thermal ALD deposition resulted in a stoichiometry of WC{sub 0.1}N{sub 0.6–0.8} with predominantly W-N chemical bonding. These films produced a high EWF of 4.7 ± 0.1 eV.

  7. Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor–insulator–semiconductor heterojunction solar cell

    SciTech Connect (OSTI)

    Talkenberg, Florian Illhardt, Stefan; Schmidl, Gabriele; Schleusener, Alexander; Sivakov, Vladimir; Radnóczi, György Zoltán; Pécz, Béla; Dikhanbayev, Kadyrjan; Mussabek, Gauhar; Gudovskikh, Alexander

    2015-07-15

    Semiconductor–insulator–semiconductor heterojunction solar cells were prepared using atomic layer deposition (ALD) technique. The silicon surface was treated with oxygen and hydrogen plasma in different orders before dielectric layer deposition. A plasma-enhanced ALD process was applied to deposit dielectric Al{sub 2}O{sub 3} on the plasma pretreated n-type Si(100) substrate. Aluminum doped zinc oxide (Al:ZnO or AZO) was deposited by thermal ALD and serves as transparent conductive oxide. Based on transmission electron microscopy studies the presence of thin silicon oxide (SiO{sub x}) layer was detected at the Si/Al{sub 2}O{sub 3} interface. The SiO{sub x} formation depends on the initial growth behavior of Al{sub 2}O{sub 3} and has significant influence on solar cell parameters. The authors demonstrate that a hydrogen plasma pretreatment and a precursor dose step repetition of a single precursor improve the initial growth behavior of Al{sub 2}O{sub 3} and avoid the SiO{sub x} generation. Furthermore, it improves the solar cell performance, which indicates a change of the Si/Al{sub 2}O{sub 3} interface states.

  8. High Gradient Accelerator Cavities Using Atomic Layer Deposition

    SciTech Connect (OSTI)

    Ives, Robert Lawrence; Parsons, Gregory; Williams, Philip; Oldham, Christopher; Mundy, Zach; Dolgashev, Valery

    2014-12-09

    In the Phase I program, Calabazas Creek Research, Inc. (CCR), in collaboration with North Carolina State University (NCSU), fabricated copper accelerator cavities and used Atomic Layer Deposition (ALD) to apply thin metal coatings of tungsten and platinum. It was hypothesized that a tungsten coating would provide a robust surface more resistant to arcing and arc damage. The platinum coating was predicted to reduce processing time by inhibiting oxides that form on copper surfaces soon after machining. Two sets of cavity parts were fabricated. One was coated with 35 nm of tungsten, and the other with approximately 10 nm of platinum. Only the platinum cavity parts could be high power tested during the Phase I program due to schedule and funding constraints. The platinum coated cavity exhibit poor performance when compared with pure copper cavities. Not only did arcing occur at lower power levels, but the processing time was actually longer. There were several issues that contributed to the poor performance. First, machining of the base copper cavity parts failed to achieve the quality and cleanliness standards specified to SLAC National Accelerator Center. Secondly, the ALD facilities were not configured to provide the high levels of cleanliness required. Finally, the nanometer coating applied was likely far too thin to provide the performance required. The coating was ablated or peeled from the surface in regions of high fields. It was concluded that the current ALD process could not provide improved performance over cavities produced at national laboratories using dedicated facilities.

  9. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    SciTech Connect (OSTI)

    Bolat, Sami Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-15

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metalsemiconductormetal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N{sub 2}/H{sub 2} PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH{sub 3} PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N{sub 2}:H{sub 2} ambient.

  10. Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

    SciTech Connect (OSTI)

    Vitale, Steven A.; Wyatt, Peter W.; Hodson, Chris J.

    2012-01-15

    Atomic layer deposition (ALD) of high-quality gadolinium oxide thin films is achieved using Gd(iPrCp){sub 3} and O{sub 2} plasma. Gd{sub 2}O{sub 3} growth is observed from 150 to 350 deg. C, though the optical properties of the film improve at higher temperature. True layer-by-layer ALD growth of Gd{sub 2}O{sub 3} occurred in a relatively narrow window of temperature and precursor dose. A saturated growth rate of 1.4 A/cycle was observed at 250 deg. C. As the temperature increases, high-quality films are deposited, but the growth mechanism appears to become CVD-like, indicating the onset of precursor decomposition. At 250 deg. C, the refractive index of the film is stable at {approx}1.80 regardless of other deposition conditions, and the measured dispersion characteristics are comparable to those of bulk Gd{sub 2}O{sub 3}. XPS data show that the O/Gd ratio is oxygen deficient at 1.3, and that it is also very hygroscopic. The plasma etching rate of the ALD Gd{sub 2}O{sub 3} film in a high-density helicon reactor is very low. Little difference is observed in etching rate between Cl{sub 2} and pure Ar plasmas, suggesting that physical sputtering dominates the etching. A threshold bias power exists below which etching does not occur; thus it may be possible to etch a metal gate material and stop easily on the Gd{sub 2}O{sub 3} gate dielectric. The Gd{sub 2}O{sub 3} film has a dielectric constant of about 16, exhibits low C-V hysteresis, and allows a 50 x reduction in gate leakage compared to SiO{sub 2}. However, the plasma enhanced atomic layer deposition (PE-ALD) process causes formation of an {approx}1.8 nm SiO{sub 2} interfacial layer, and generates a fixed charge of -1.21 x 10{sup 12} cm{sup -2}, both of which may limit use of PE-ALD Gd{sub 2}O{sub 3} as a gate dielectric.

  11. Atomic layer deposited lithium aluminum oxide: (In)dependency of film properties from pulsing sequence

    SciTech Connect (OSTI)

    Miikkulainen, Ville Nilsen, Ola; Fjellvåg, Helmer; Li, Han; King, Sean W.; Laitinen, Mikko; Sajavaara, Timo

    2015-01-01

    Atomic layer deposition (ALD) holds markedly high potential of becoming the enabling method for achieving the three-dimensional all-solid-state thin-film lithium ion battery (LiB). One of the most crucial components in such a battery is the electrolyte that needs to hold both low electronic conductivity and at least fair lithium ion conductivity being at the same time pinhole free. To obtain these desired properties in an electrolyte film, one necessarily has to have a good control over the elemental composition of the deposited material. The present study reports on the properties of ALD lithium aluminum oxide (Li{sub x}Al{sub y}O{sub z}) thin films. In addition to LiB electrolyte applications, Li{sub x}Al{sub y}O{sub z} is also a candidate low dielectric constant (low-k) etch stop and diffusion barrier material in nanoelectronics applications. The Li{sub x}Al{sub y}O{sub z} films were deposited employing trimethylaluminum-O{sub 3} and lithium tert-butoxide-H{sub 2}O for Al{sub 2}O{sub 3} and Li{sub 2}O/LiOH, respectively. The composition was aimed to be controlled by varying the pulsing ratio of those two binary oxide ALD cycles. The films were characterized by several methods for composition, crystallinity and phase, electrical properties, hardness, porosity, and chemical environment. Regardless of the applied pulsing ratio of Al{sub 2}O{sub 3} and Li{sub 2}O/LiOH, all the studied ALD Li{sub x}Al{sub y}O{sub z} films of 200 and 400 nm in thickness were polycrystalline in the orthorhombic β-LiAlO{sub 2} phase and also very similar to each other with respect to composition and other studied properties. The results are discussed in the context of both fundamental ALD chemistry and applicability of the films as thin-film LiB electrolytes and low-k etch stop and diffusion barriers.

  12. Energy Technology Division research summary 1997.

    SciTech Connect (OSTI)

    1997-10-21

    The Energy Technology Division provides materials and engineering technology support to a wide range of programs important to the US Department of Energy. As shown on the preceding page, the Division is organized into ten sections, five with concentrations in the materials area and five in engineering technology. Materials expertise includes fabrication, mechanical properties, corrosion, friction and lubrication, and irradiation effects. Our major engineering strengths are in heat and mass flow, sensors and instrumentation, nondestructive testing, transportation, and electromechanics and superconductivity applications. The Division Safety Coordinator, Environmental Compliance Officers, Quality Assurance Representative, Financial Administrator, and Communication Coordinator report directly to the Division Director. The Division Director is personally responsible for cultural diversity and is a member of the Laboratory-wide Cultural Diversity Advisory Committee. The Division's capabilities are generally applied to issues associated with energy production, transportation, utilization or conservation, or with environmental issues linked to energy. As shown in the organization chart on the next page, the Division reports administratively to the Associate Laboratory Director (ALD) for Energy and Environmental Science and Technology (EEST) through the General Manager for Environmental and Industrial Technologies. While most of our programs are under the purview of the EEST ALD, we also have had programs funded under every one of the ALDs. Some of our research in superconductivity is funded through the Physical Research Program ALD. We also continue to work on a number of nuclear-energy-related programs under the ALD for Engineering Research. Detailed descriptions of our programs on a section-by-section basis are provided in the remainder of this book. This Overview highlights some major trends. Research related to the operational safety of commercial light water nuclear

  13. Tularosa Basin Play Fairway Analysis: Hydrothermal Alteration Map

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Adam Brandt

    2015-11-15

    This is a hydrothermal alteration map of the Tularosa Basin area, New Mexico and Texas that was created using Advanced Spaceborne Thermal Emission and Reflection Radiometer (ASTER) multispectral data band ratios based upon diagnostic features of clay, calcite, silica, gypsum, ferric iron, and ferrous iron. Mesoproterozoic granite in the San Andreas Range often appeared altered, but this may be from clays produced by weathering or, locally, by hydrothermal alteration. However, no field checking was done. This work was done under U.S. D.O.E. Contract #DE-EE0006730

  14. Low-temperature atomic layer deposition of Al{sub 2}O{sub 3} on blown polyethylene films with plasma-treated surfaces

    SciTech Connect (OSTI)

    Beom Lee, Gyeong; Sik Son, Kyung; Won Park, Suk; Hyung Shim, Joon; Choi, Byoung-Ho

    2013-01-15

    In this study, a layer of Al{sub 2}O{sub 3} was deposited on blown polyethylene films by atomic layer deposition (ALD) at low temperatures, and the surface characteristics of these Al{sub 2}O{sub 3}-coated blown polyethylene films were analyzed. In order to examine the effects of the plasma treatment of the surfaces of the blown polyethylene films on the properties of the films, both untreated and plasma-treated film samples were prepared under various processing conditions. The surface characteristics of the samples were determined by x-ray photoelectron spectroscopy, as well as by measuring their surface contact angles. It was confirmed that the surfaces of the plasma-treated samples contained a hydroxyl group, which helped the precursor and the polyethylene substrate to bind. ALD of Al{sub 2}O{sub 3} was performed through sequential exposures to trimethylaluminum and H{sub 2}O at 60 Degree-Sign C. The surface morphologies of the Al{sub 2}O{sub 3}-coated blown polyethylene films were observed using atomic force microscopy and scanning electron microscopy/energy-dispersive x-ray spectroscopy. Further, it was confirmed that after ALD, the surface of the plasma-treated film was covered with alumina grains more uniformly than was the case for the surface of the untreated polymer film. It was also confirmed via the focused ion beam technique that the layer Al{sub 2}O{sub 3} conformed to the surface of the blown polyethylene film.

  15. Carbon monoxide alleviates ethanol-induced oxidative damage and inflammatory stress through activating p38 MAPK pathway

    SciTech Connect (OSTI)

    Li, Yanyan; Gao, Chao; Shi, Yanru; Tang, Yuhan; Liu, Liang; Xiong, Ting; Du, Min; Xing, Mingyou; Liu, Liegang; Yao, Ping

    2013-11-15

    Stress-inducible protein heme oxygenase-1(HO-1) is well-appreciative to counteract oxidative damage and inflammatory stress involving the pathogenesis of alcoholic liver diseases (ALD). The potential role and signaling pathways of HO-1 metabolite carbon monoxide (CO), however, still remained unclear. To explore the precise mechanisms, ethanol-dosed adult male Balb/c mice (5.0 g/kg.bw.) or ethanol-incubated primary rat hepatocytes (100 mmol/L) were pretreated by tricarbonyldichlororuthenium (II) dimmer (CORM-2, 8 mg/kg for mice or 20 μmol/L for hepatocytes), as well as other pharmacological reagents. Our data showed that CO released from HO-1 induction by quercetin prevented ethanol-derived oxidative injury, which was abolished by CO scavenger hemoglobin. The protection was mimicked by CORM-2 with the attenuation of GSH depletion, SOD inactivation, MDA overproduction, and the leakage of AST, ALT or LDH in serum and culture medium induced by ethanol. Moreover, CORM-2 injection or incubation stimulated p38 phosphorylation and suppressed abnormal Tnfa and IL-6, accompanying the alleviation of redox imbalance induced by ethanol and aggravated by inflammatory factors. The protective role of CORM-2 was abolished by SB203580 (p38 inhibitor) but not by PD98059 (ERK inhibitor) or SP600125 (JNK inhibitor). Thus, HO-1 released CO prevented ethanol-elicited hepatic oxidative damage and inflammatory stress through activating p38 MAPK pathway, suggesting a potential therapeutic role of gaseous signal molecule on ALD induced by naturally occurring phytochemicals. - Highlights: • CO alleviated ethanol-derived liver oxidative and inflammatory stress in mice. • CO eased ethanol and inflammatory factor-induced oxidative damage in hepatocytes. • The p38 MAPK is a key signaling mechanism for the protective function of CO in ALD.

  16. Roll-to-roll atomic layer deposition process for flexible electronics encapsulation applications

    SciTech Connect (OSTI)

    Maydannik, Philipp S. Kriinen, Tommi O.; Lahtinen, Kimmo; Cameron, David C.; Sderlund, Mikko; Soininen, Pekka; Johansson, Petri; Kuusipalo, Jurkka; Moro, Lorenza; Zeng, Xianghui

    2014-09-01

    At present flexible electronic devices are under extensive development and, among them, flexible organic light-emitting diode displays are the closest to a large market deployment. One of the remaining unsolved challenges is high throughput production of impermeable flexible transparent barrier layers that protect sensitive light-emitting materials against ambient moisture. The present studies deal with the adaptation of the atomic layer deposition (ALD) process to high-throughput roll-to-roll production using the spatial ALD concept. We report the development of such a process for the deposition of 20?nm thickness Al{sub 2}O{sub 3} diffusion barrier layers on 500?mm wide polymer webs. The process uses trimethylaluminum and water as precursors at a substrate temperature of 105?C. The observation of self-limiting film growth behavior and uniformity of thickness confirms the ALD growth mechanism. Water vapor transmission rates for 20?nm Al{sub 2}O{sub 3} films deposited on polyethylene naphthalate (PEN) substrates were measured as a function of substrate residence time, that is, time of exposure of the substrate to one precursor zone. Moisture permeation levels measured at 38?C/90% relative humidity by coulometric isostaticisobaric method were below the detection limit of the instrument (<5??10{sup ?4}?g/m{sup 2} day) for films coated at web moving speed of 0.25?m/min. Measurements using the Ca test indicated water vapor transmission rates ?5??10{sup ?6} g/m{sup 2} day. Optical measurements on the coated web showed minimum transmission of 80% in the visible range that is the same as the original PEN substrate.

  17. Atomic and molecular layer deposition for surface modification

    SciTech Connect (OSTI)

    Vh-Nissi, Mika; Sievnen, Jenni; Salo, Erkki; Heikkil, Pirjo; Kentt, Eija; Johansson, Leena-Sisko; Koskinen, Jorma T.; Harlin, Ali

    2014-06-01

    Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gassolid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces. Typically ALD/MLD has been used for applications where uniform and pinhole free thin film is a necessity even on 3D surfaces. However, thin even non-uniform atomic and molecular deposited layers can also be used to tailor the surface characteristics of different non-ideal substrates. For example, print quality of inkjet printing on polymer films and penetration of water into porous nonwovens can be adjusted with low-temperature deposited metal oxide. In addition, adhesion of extrusion coated biopolymer to inorganic oxides can be improved with a hybrid layer based on lactic acid. - Graphical abstract: Print quality of a polylactide film surface modified with atomic layer deposition prior to inkjet printing (360 dpi) with an aqueous ink. Number of printed dots illustrated as a function of 0, 5, 15 and 25 deposition cycles of trimethylaluminum and water. - Highlights: ALD/MLD can be used to adjust surface characteristics of films and fiber materials. Hydrophobicity after few deposition cycles of Al{sub 2}O{sub 3} due to e.g. complex formation. Same effect on cellulosic fabrics observed with low temperature deposited TiO{sub 2}. Different film growth and oxidation potential with different precursors. Hybrid layer on inorganic layer can be used to improve adhesion of polymer melt.

  18. Quasi-two-dimensional electron gas at the interface of γ-Al{sub 2}O{sub 3}/SrTiO{sub 3} heterostructures grown by atomic layer deposition

    SciTech Connect (OSTI)

    Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G.; Goble, Nicholas J.; Gao, Xuan P. A.; Posadas, Agham; Kormondy, Kristy J.; Demkov, Alexander A.; Lu, Sirong; Jordan-Sweet, Jean; Smith, David J.

    2015-09-21

    We report the formation of a quasi-two-dimensional electron gas (2-DEG) at the interface of γ-Al{sub 2}O{sub 3}/TiO{sub 2}-terminated SrTiO{sub 3} (STO) grown by atomic layer deposition (ALD). The ALD growth of Al{sub 2}O{sub 3} on STO(001) single crystal substrates was performed at temperatures in the range of 200–345 °C. Trimethylaluminum and water were used as co-reactants. In situ reflection high energy electron diffraction, ex situ x-ray diffraction, and ex situ cross-sectional transmission electron microscopy were used to determine the crystallinity of the Al{sub 2}O{sub 3} films. As-deposited Al{sub 2}O{sub 3} films grown above 300 °C were crystalline with the γ-Al{sub 2}O{sub 3} phase. In situ x-ray photoelectron spectroscopy was used to characterize the Al{sub 2}O{sub 3}/STO interface, indicating that a Ti{sup 3+} feature in the Ti 2p spectrum of STO was formed after 2–3 ALD cycles of Al{sub 2}O{sub 3} at 345 °C and even after the exposure to trimethylaluminum alone at 300 and 345 °C. The interface quasi-2-DEG is metallic and exhibits mobility values of ∼4 and 3000 cm{sup 2} V{sup −1} s{sup −1} at room temperature and 15 K, respectively. The interfacial conductivity depended on the thickness of the Al{sub 2}O{sub 3} layer. The Ti{sup 3+} signal originated from the near-interfacial region and vanished after annealing in an oxygen environment.

  19. Lipidomic changes in rat liver after long-term exposure to ethanol

    SciTech Connect (OSTI)

    Fernando, Harshica; Bhopale, Kamlesh K.; Kondraganti, Shakuntala; Kaphalia, Bhupendra S.; Shakeel Ansari, G.A.

    2011-09-01

    Alcoholic liver disease (ALD) is a serious health problem with significant morbidity and mortality. In this study we examined the progression of ALD along with lipidomic changes in rats fed ethanol for 2 and 3 months to understand the mechanism, and identify possible biomarkers. Male Fischer 344 rats were fed 5% ethanol or caloric equivalent of maltose-dextrin in a Lieber-DeCarli diet. Animals were killed at the end of 2 and 3 months and plasma and livers were collected. Portions of the liver were fixed for histological and immunohistological studies. Plasma and the liver lipids were extracted and analyzed by nuclear magnetic resonance (NMR) spectroscopy. A time dependent fatty infiltration was observed in the livers of ethanol-fed rats. Mild inflammation and oxidative stress were observed in some ethanol-fed rats at 3 months. The multivariate and principal component analysis of proton and phosphorus NMR spectroscopy data of extracted lipids from the plasma and livers showed segregation of ethanol-fed groups from the pair-fed controls. Significant hepatic lipids that were increased by ethanol exposure included fatty acids and triglycerides, whereas phosphatidylcholine (PC) decreased. However, both free fatty acids and PC decreased in the plasma. In liver lipids unsaturation of fatty acyl chains increased, contrary to plasma, where it decreased. Our studies confirm that over-accumulation of lipids in ethanol-induced liver steatosis accompanied by mild inflammation on long duration of ethanol exposure. Identified metabolic profile using NMR lipidomics could be further explored to establish biomarker signatures representing the etiopathogenesis, progression and/or severity of ALD. - Highlights: > Long term exposure to ethanol was studied. > A nuclear magnetic resonance (NMR) spectroscopy based lipidomic approach was used. > We examined the clustering pattern of the NMR data with principal component analysis. > NMR data were compared with histology and

  20. High-reliability passivation of hydrogen-terminated diamond surface by atomic layer deposition of Al{sub 2}O{sub 3}

    SciTech Connect (OSTI)

    Daicho, Akira Saito, Tatsuya; Kurihara, Shinichiro; Kawarada, Hiroshi; Hiraiwa, Atsushi

    2014-06-14

    Although the two-dimensional hole gas (2DHG) of a hydrogen-terminated diamond surface provides a unique p-type conducting layer for high-performance transistors, the conductivity is highly sensitive to its environment. Therefore, the surface must be passivated to preserve the 2DHG, especially at high temperature. We passivated the surface at high temperature (450?C) without the loss of C-H surface bonds by atomic layer deposition (ALD) and investigated the thermal reliability of the Al{sub 2}O{sub 3} film. As a result, C-H bonds were preserved, and the hole accumulation effect appeared after the Al{sub 2}O{sub 3} deposition by ALD with H{sub 2}O as an oxidant. The sheet resistivity and hole density were almost constant between room temperature and 500?C by the passivation with thick Al{sub 2}O{sub 3} film thicker than 38?nm deposited by ALD at 450?C. After the annealing at 550?C in air The sheet resistivity and hole density were preserved. These results indicate the possibility of high-temperature application of the C-H surface diamond device in air. In the case of lower deposition temperatures, the sheet resistivity increased after air annealing, suggesting an insufficient protection capability of these films. Given the result of sheet resistivity after annealing, the increase in the sheet resistivity of these samples was not greatly significant. However, bubble like patterns were observed in the Al{sub 2}O{sub 3} films formed from 200 to 400?C by air annealing at 550?C for 1 h. On the other hand, the patterns were no longer observed at 450?C deposition. Thus, this 450?C deposition is the sole solution to enabling power device application, which requires high reliability at high temperatures.

  1. Ringleader: Don DePaolo, Associate Laboratory Director for Energy Sciences

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Don DePaolo, Associate Laboratory Director for Energy Sciences Print As Associate Laboratory Director (ALD) for Energy Sciences, Don DePaolo oversees the ALS, Chemical Sciences, and Materials Sciences. He's also a UC Berkeley Professor of Geochemistry in the Department of Earth and Planetary Science. Though many ALS staff and users may not know him personally, DePaolo has been a key figure in the ALS/DOE relationship over the past few years. DePaolo will be retiring this year, but hopes to

  2. Methods for simultaneous control of lignin content and composition, and cellulose content in plants

    DOE Patents [OSTI]

    Chiang, Vincent Lee C.; Li, Laigeng

    2005-02-15

    The present invention relates to a method of concurrently introducing multiple genes into plants and trees is provided. The method includes simultaneous transformation of plants with multiple genes from the phenylpropanoid pathways including 4CL, CAld5H, AldOMT, SAD and CAD genes and combinations thereof to produce various lines of transgenic plants displaying altered agronomic traits. The agronomic traits of the plants are regulated by the orientation of the specific genes and the selected gene combinations, which are incorporated into the plant genome.

  3. ATLAS Science and Technology Review

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    th Anniversary Celebration October 22-23, 2010 Physics Division, Argonne National Laboratory Building 203, Auditorium Friday, October 22: The Past as Prologue 8:00 - 8:30 Registration and coffee Chair: R.V.F. Janssens 8:30 - 8:45 Welcome by Laboratory Director and ALD E. Isaacs/S. Streiffer 8:45 - 9:30 Summary of the History of ATLAS W.F. Henning Chair: B.B. Back 9:30 - 10:30 Reminiscences 10:30 - 10:50 Break Chair: J. Nolen 10:50 - 11:25 The Impact of ATLAS on SRF Development and Applications

  4. SSRL HEADLINES February 2013

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8 - February 2013 View the Archives **Note for Outlook users: For easier reading, please click the bar at the top of this message that reads "This message was converted to plain text" and select "Display as HTML."** From Director PieroPianetta I'm writing this column as acting Associate Lab Director for SLAC's Stanford Synchrotron Radiation Lightsource Directorate, a role I stepped into in November, when then-ALD Chi-Chang Kao became director of the laboratory. As many of you

  5. Accelerated deployment of nanostructured hydrotreating catalysts. Final CRADA Report.

    SciTech Connect (OSTI)

    Libera, J.A.; Snyder, S.W.; Mane, A.; Elam, J.W.; Cronauer, D.C.; Muntean, J.A.; Wu, T.; Miller, J.T.

    2012-08-27

    Nanomanufacturing offers an opportunity to create domestic jobs and facilitate economic growth. In response to this need, U.S. Department of Energy, Office of Energy Efficiency and Renewable Energy issued a Research Call to develop nanomanufacturing capabilities at the National Laboratories. High performance catalysts represent a unique opportunity to deploy nanomanufacturing technologies. Re-refining of used lube oil offers an opportunity to create manufacturing jobs and decrease dependence on imported petroleum. Improved catalysts are required to produce a better quality product, decrease environmental impact, extend catalyst life, and improve overall economics of lube oil re-refining. Argonne National Laboratory (Argonne) in cooperation with Universal Lubricants, Inc. (ULI) and Chemical Engineering Partners (CEP) have carried out a Cooperative Research and Development Agreement (CRADA) to prepare nanostructured hydrotreating catalysts using atomic layer deposition (ALD) to exhibit superior performance for the re-refining of used lube oil. We investigated the upgrading of recycled lube oil by hydrogenation using commercial, synthetically-modified commercial catalysts, and synthesized catalysts. A down-flow (trickle bed) catalytic unit was used for the hydrogenation experiments. In addition to carrying out elemental analyses of the various feed and product fractions, characterization was undertaken using H{sup 1} and C{sup 13} NMR. Initially commercial were evaluated. Second these commercial catalysts were promoted with precious metals using atomic layer deposition (ALD). Performance improvements were observed that declined with catalyst aging. An alternate approach was undertaken to deeply upgrade ULI product oils. Using a synthesized catalyst, much lower hydrogenation temperatures were required than commercial catalysts. Other performance improvements were also observed. The resulting lube oil fractions were of high purity even at low reaction severity. The

  6. Catalytic nanoporous membranes

    DOE Patents [OSTI]

    Pellin, Michael J; Hryn, John N; Elam, Jeffrey W

    2013-08-27

    A nanoporous catalytic membrane which displays several unique features Including pores which can go through the entire thickness of the membrane. The membrane has a higher catalytic and product selectivity than conventional catalysts. Anodic aluminum oxide (AAO) membranes serve as the catalyst substrate. This substrate is then subjected to Atomic Layer Deposition (ALD), which allows the controlled narrowing of the pores from 40 nm to 10 nm in the substrate by deposition of a preparatory material. Subsequent deposition of a catalytic layer on the inner surfaces of the pores reduces pore sizes to less than 10 nm and allows for a higher degree of reaction selectivity. The small pore sizes allow control over which molecules enter the pores, and the flow-through feature can allow for partial oxidation of reactant species as opposed to complete oxidation. A nanoporous separation membrane, produced by ALD is also provided for use in gaseous and liquid separations. The membrane has a high flow rate of material with 100% selectivity. Also provided is a method for producing a catalytic membrane having flow-through pores and discreet catalytic clusters adhering to the inside surfaces of the pores.

  7. Catalytic nanoporous membranes

    DOE Patents [OSTI]

    Pellin, Michael J.; Hryn, John N.; Elam, Jeffrey W.

    2009-12-01

    A nanoporous catalytic membrane which displays several unique features including pores which can go through the entire thickness of the membrane. The membrane has a higher catalytic and product selectivity than conventional catalysts. Anodic aluminum oxide (AAO) membranes serve as the catalyst substrate. This substrate is then subjected to Atomic Layer Deposition (ALD), which allows the controlled narrowing of the pores from 40 nm to 10 nm in the substrate by deposition of a preparatory material. Subsequent deposition of a catalytic layer on the inner surfaces of the pores reduces pore sizes to less than 10 nm and allows for a higher degree of reaction selectivity. The small pore sizes allow control over which molecules enter the pores, and the flow-through feature can allow for partial oxidation of reactant species as opposed to complete oxidation. A nanoporous separation membrane, produced by ALD is also provided for use in gaseous and liquid separations. The membrane has a high flow rate of material with 100% selectivity.

  8. Atomic layer deposition effect on the electrical properties of Al{sub 2}O{sub 3}-passivated PbS quantum dot field-effect transistors

    SciTech Connect (OSTI)

    So, Hye-Mi; Shim, Hyung Cheoul; Choi, Hyekyoung; Lee, Seung-Mo; Jeong, Sohee; Chang, Won Seok

    2015-03-02

    We have investigated the effect of atomic layer deposition (ALD) on the electrical properties of colloidal PbS quantum dot field-effect transistors (PbS QD-FETs). Low-temperature Al{sub 2}O{sub 3} ALD process was used to fill up the pore spaces of PbS QD films containing 1, 2-ethanedithiol ligands. Upon deposition of Al{sub 2}O{sub 3} on PbS film, the PbS QD-FETs showed ambipolar behavior. The treated film retained this property for over 2 months, despite of exposure to air. This change in the electrical properties of the PbS QD-FETs is attributed to the formation of electron channels in the Al{sub 2}O{sub 3}-passivated PbS film. We conclude that these electron transport channels in the Al{sub x}O{sub y}-PbS film are formed due to substitution of the Pb sites by Al metal and chemical reduction of Pb{sup 2+} ions, as determined by an analysis of the depth profile of the film using secondary ion mass spectrometry and X-ray photoelectron spectroscopy.

  9. Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

    SciTech Connect (OSTI)

    Liao, Baochen; Hoex, Bram; Aberle, Armin G.; Bhatia, Charanjit S.; Chi, Dongzhi

    2014-06-23

    In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiO{sub x}) films are able to provide a—up to now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The surface passivation provided by the ALD TiO{sub x} films is activated by a post-deposition anneal and subsequent light soaking treatment. Ultralow effective surface recombination velocities down to 2.8 cm/s and 8.3 cm/s, respectively, are achieved on n-type and p-type float-zone c-Si wafers. Detailed analysis confirms that the TiO{sub x} films are nearly stoichiometric, have no significant level of contaminants, and are of amorphous nature. The passivation is found to be stable after storage in the dark for eight months. These results demonstrate that TiO{sub x} films are also capable of providing excellent passivation of undiffused c-Si surfaces on a comparable level to thermal silicon oxide, silicon nitride, and aluminum oxide. In addition, it is well known that TiO{sub x} has an optimal refractive index of 2.4 in the visible range for glass encapsulated solar cells, as well as a low extinction coefficient. Thus, the results presented in this work could facilitate the re-emergence of TiO{sub x} in the field of high-efficiency silicon wafer solar cells.

  10. Core-shell Si@TiO2 nanosphere anode by atomic layer deposition for Li-ion batteries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dai, Sheng

    2016-01-28

    Silicon (Si) is regarded as next-generation anode for high-energy lithium-ion batteries (LIBs) due to its high Li storage capacity (4200 mA h g-1). However, the mechanical degradation and resultant capacity fade critically hinder its practical application. In this regard, we demonstrate that nanocoating of Si spheres with a 3 nm titanium dioxide (TiO2) layer via atomic layer deposition (ALD) can utmostly balance the high conductivity and the good structural stability to improve the cycling stability of Si core material. The resultant sample, Si@TiO2-3 nm core–shell nanospheres, exhibits the best electrochemical performance of all with a highest initial Coulombic efficiency andmore » specific charge capacity retention after 50 cycles at 0.1C (82.39% and 1580.3 mA h g-1). In addition to making full advantage of the ALD technique, we believe that our strategy and comprehension in coating the electrode and the active material could provide a useful pathway towards enhancing Si anode material itself and community of LIBs.« less

  11. Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology

    SciTech Connect (OSTI)

    Burke, Micheal Blake, Alan; Povey, Ian M.; Schmidt, Michael; Petkov, Nikolay; Carolan, Patrick; Quinn, Aidan J.

    2014-05-15

    A design of experiments methodology was used to optimize the sheet resistance of titanium nitride (TiN) films produced by plasma-enhanced atomic layer deposition (PE-ALD) using a tetrakis(dimethylamino)titanium precursor in a N{sub 2}/H{sub 2} plasma at low temperature (250 °C). At fixed chamber pressure (300 mTorr) and plasma power (300 W), the plasma duration and N{sub 2} flow rate were the most significant factors. The lowest sheet resistance values (163 Ω/sq. for a 20 nm TiN film) were obtained using plasma durations ∼40 s, N{sub 2} flow rates >60 standard cubic centimeters per minute, and purge times ∼60 s. Time of flight secondary ion mass spectroscopy data revealed reduced levels of carbon contaminants in the TiN films with lowest sheet resistance (163 Ω/sq.), compared to films with higher sheet resistance (400–600 Ω/sq.) while transmission electron microscopy data showed a higher density of nanocrystallites in the low-resistance films. Further significant reductions in sheet resistance, from 163 Ω/sq. to 70 Ω/sq. for a 20 nm TiN film (corresponding resistivity ∼145 μΩ·cm), were achieved by addition of a postcycle Ar/N{sub 2} plasma step in the PE-ALD process.

  12. High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition

    SciTech Connect (OSTI)

    Burke, Micheal Blake, Alan; Djara, Vladimir; O'Connell, Dan; Povey, Ian M.; Cherkaoui, Karim; Monaghan, Scott; Scully, Jim; Murphy, Richard; Hurley, Paul K.; Pemble, Martyn E.; Quinn, Aidan J.

    2015-01-01

    The authors report on the structural and electrical properties of TiN/Al{sub 2}O{sub 3}/TiN metal–insulator–metal (MIM) capacitor structures in submicron three-dimensional (3D) trench geometries with an aspect ratio of ∼30. A simplified process route was employed where the three layers for the MIM stack were deposited using atomic layer deposition (ALD) in a single run at a process temperature of 250 °C. The TiN top and bottom electrodes were deposited via plasma-enhanced ALD using a tetrakis(dimethylamino)titanium precursor. 3D trench devices yielded capacitance densities of 36 fF/μm{sup 2} and quality factors >65 at low frequency (200 Hz), with low leakage current densities (<3 nA/cm{sup 2} at 1 V). These devices also show strong optical iridescence which, when combined with the covert embedded capacitance, show potential for system in package (SiP) anticounterfeiting applications.

  13. Epitaxial c-axis oriented BaTiO{sub 3} thin films on SrTiO{sub 3}-buffered Si(001) by atomic layer deposition

    SciTech Connect (OSTI)

    Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G., E-mail: ekerdt@che.utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Posadas, Agham B.; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States); Hu, Chengqing; Yu, Edward T. [Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Bruley, John [IBM Research Division, Yorktown Heights, New York 10593 (United States)

    2014-02-24

    Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO{sub 3} (BTO) on Si(001) using a thin (1.6?nm) buffer layer of SrTiO{sub 3} (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225??C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600??C. Two-dimensional XRD confirms the tetragonal structure and orientation of 720-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 720?nm-thick BTO films are examined and show an effective dielectric constant of ?660 for the heterostructure.

  14. Characterization of ZnO film grown on polycarbonate by atomic layer deposition at low temperature

    SciTech Connect (OSTI)

    Lee, Gyeong Beom; Han, Gwon Deok; Shim, Joon Hyung; Choi, Byoung-Ho

    2015-01-15

    ZnO is an attractive material for use in various technological products such as phosphors, gas sensors, and transparent conductors. Recently, aluminum-doped zinc oxide has received attention as a potential replacement for indium tin oxide, which is one of the transparent conductive oxides used in flat panel displays, organic light-emitting diodes, and organic solar cells. In this study, the characteristics of ZnO films deposited on polycarbonate (PC) substrates by atomic layer deposition (ALD) are investigated for various process temperatures. The growth mechanism of these films was investigated at low process temperatures using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). XRD and XPS were used to determine the preferred orientation and chemical composition of the films, respectively. Furthermore, the difference of the deposition mechanisms on an amorphous organic material, i.e., PC substrate and an inorganic material such as silicon was discussed from the viewpoint of the diffusion and deposition of precursors. The structure of the films was also investigated by chemical analysis in order to determine the effect of growth temperature on the films deposited by ALD.

  15. Influence of PEDOT:PSS on the effectiveness of barrier layers prepared by atomic layer deposition in organic light emitting diodes

    SciTech Connect (OSTI)

    Wegler, Barbara; Schmidt, Oliver; Hensel, Bernhard

    2015-01-15

    Organic light emitting diodes (OLEDs) are well suited for energy saving lighting applications, especially when thinking about highly flexible and large area devices. In order to avoid the degradation of the organic components by water and oxygen, OLEDs need to be encapsulated, e.g., by a thin sheet of glass. As the device is then no longer flexible, alternative coatings are required. Atomic layer deposition (ALD) is a very promising approach in this respect. The authors studied OLEDs that were encapsulated by 100 nm Al{sub 2}O{sub 3} deposited by ALD. The authors show that this coating effectively protects the active surface area of the OLEDs from humidity. However, secondary degradation processes still occur at sharp edges of the OLED stack where the extremely thin encapsulation layer does not provide perfect coverage. Particularly, the swelling of poly(3,4-ethylenedioxythiophene) mixed with poly(styrenesulfonate), which is a popular choice for the planarization of the bottom electrode and at the same time acts as a hole injection layer, affects the effectiveness of the encapsulation layer.

  16. Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

    SciTech Connect (OSTI)

    Yokoyama, Masafumi Takenaka, Mitsuru; Takagi, Shinichi; Yokoyama, Haruki

    2015-02-16

    We have realized ultrathin body GaSb-on-insulator (GaSb-OI) on Si wafers by direct wafer bonding technology using atomic-layer deposition (ALD) Al{sub 2}O{sub 3} and have demonstrated GaSb-OI p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si. A 23-nm-thick GaSb-OI p-MOSFET exhibits the peak effective mobility of ∼76 cm{sup 2}/V s. We have found that the effective hole mobility of the thin-body GaSb-OI p-MOSFETs decreases with a decrease in the GaSb-OI thickness or with an increase in Al{sub 2}O{sub 3} ALD temperature. The InAs passivation of GaSb-OI MOS interfaces can enhance the peak effective mobility up to 159 cm{sup 2}/V s for GaSb-OI p-MOSFETs with the 20-nm-thick GaSb layer.

  17. Continuous production of nanostructured particles using spatial atomic layer deposition

    SciTech Connect (OSTI)

    Ommen, J. Ruud van Kooijman, Dirkjan; Niet, Mark de; Talebi, Mojgan; Goulas, Aristeidis

    2015-03-15

    In this paper, the authors demonstrate a novel spatial atomic layer deposition (ALD) process based on pneumatic transport of nanoparticle agglomerates. Nanoclusters of platinum (Pt) of ?1?nm diameter are deposited onto titania (TiO{sub 2}) P25 nanoparticles resulting to a continuous production of an active photocatalyst (0.120.31?wt. % of Pt) at a rate of about 1?g min{sup ?1}. Tuning the precursor injection velocity (1040?m s{sup ?1}) enhances the contact between the precursor and the pneumatically transported support flows. Decreasing the chemisorption temperature (from 250 to 100?C) results in more uniform distribution of the Pt nanoclusters as it decreases the reaction rate as compared to the rate of diffusion into the nanoparticle agglomerates. Utilizing this photocatalyst in the oxidation reaction of Acid Blue 9 showed a factor of five increase of the photocatalytic activity compared to the native P25 nanoparticles. The use of spatial particle ALD can be further expanded to deposition of nanoclusters on porous, micron-sized particles and to the production of coreshell nanoparticles enabling the robust and scalable manufacturing of nanostructured powders for catalysis and other applications.

  18. Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

    SciTech Connect (OSTI)

    Baggetto, Loic; Charvillat, Cedric; Thebault, Yannick; Esvan, Jerome; Lafont, Marie-Christine; Scheid, Emmanuel; Veith, Gabriel M.; Vahlas, Constantin

    2015-12-02

    Ti/Al2O3 bilayer stacks are used as model systems to investigate the role of atomic layer deposition (ALD) and chemical vapor deposition (CVD) to prepare 30-180 nm thick amorphous alumina films as protective barriers for the medium temperature oxidation (500-600⁰C) of titanium, which is employed in aeronautic applications. X-ray diffraction (XRD), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), and X-ray photoelectron spectroscopy (XPS) results show that the films produced from the direct liquid injection (DLI) CVD of aluminum tri-isopropoxide (ATI) are poor oxygen barriers. The films processed using the ALD of trimethylaluminum (TMA) show good barrier properties but an extensive intermixing with Ti which subsequently oxidizes. In contrast, the films prepared from dimethyl aluminum isopropoxide (DMAI) by CVD are excellent oxygen barriers and show little intermixing with Ti. Overall, these measurements correlate the effect of the alumina coating thickness, morphology, and stoichiometry resulting from the preparation method to the oxidation barrier properties, and show that compact and stoichiometric amorphous alumina films offer superior barrier properties.

  19. C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

    SciTech Connect (OSTI)

    Kawarada, H.; Tsuboi, H.; Naruo, T.; Yamada, T.; Xu, D.; Daicho, A.; Saito, T.; Hiraiwa, A.

    2014-07-07

    By forming a highly stable Al{sub 2}O{sub 3} gate oxide on a C-H bonded channel of diamond, high-temperature, and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From room temperature to 400 °C (673 K), the variation of maximum drain-current is within 30% at a given gate bias. The maximum breakdown voltage (V{sub B}) of the MOSFET without a field plate is 600 V at a gate-drain distance (L{sub GD}) of 7 μm. We fabricated some MOSFETs for which V{sub B}/L{sub GD} > 100 V/μm. These values are comparable to those of lateral SiC or GaN FETs. The Al{sub 2}O{sub 3} was deposited on the C-H surface by atomic layer deposition (ALD) at 450 °C using H{sub 2}O as an oxidant. The ALD at relatively high temperature results in stable p-type conduction and FET operation at 400 °C in vacuum. The drain current density and transconductance normalized by the gate width are almost constant from room temperature to 400 °C in vacuum and are about 10 times higher than those of boron-doped diamond FETs.

  20. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    SciTech Connect (OSTI)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  1. Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Baggetto, Loic; Charvillat, Cedric; Thebault, Yannick; Esvan, Jerome; Lafont, Marie-Christine; Scheid, Emmanuel; Veith, Gabriel M.; Vahlas, Constantin

    2015-12-02

    Ti/Al2O3 bilayer stacks are used as model systems to investigate the role of atomic layer deposition (ALD) and chemical vapor deposition (CVD) to prepare 30-180 nm thick amorphous alumina films as protective barriers for the medium temperature oxidation (500-600⁰C) of titanium, which is employed in aeronautic applications. X-ray diffraction (XRD), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), and X-ray photoelectron spectroscopy (XPS) results show that the films produced from the direct liquid injection (DLI) CVD of aluminum tri-isopropoxide (ATI) are poor oxygen barriers. The films processed using the ALD of trimethylaluminum (TMA) show good barrier properties butmore » an extensive intermixing with Ti which subsequently oxidizes. In contrast, the films prepared from dimethyl aluminum isopropoxide (DMAI) by CVD are excellent oxygen barriers and show little intermixing with Ti. Overall, these measurements correlate the effect of the alumina coating thickness, morphology, and stoichiometry resulting from the preparation method to the oxidation barrier properties, and show that compact and stoichiometric amorphous alumina films offer superior barrier properties.« less

  2. High Rate and High Capacity Li-Ion Electrodes for Vehicular Applications

    SciTech Connect (OSTI)

    Dillon, A. C.

    2012-01-01

    Significant advances in both energy density and rate capability for Li-ion batteries are necessary for implementation in electric vehicles. We have employed two different methods to improve the rate capability of high capacity electrodes. For example, we previously demonstrated that thin film high volume expansion MoO{sub 3} nanoparticle electrodes ({approx}2 {micro}m thick) have a stable capacity of {approx}630 mAh/g, at C/2 (charge/dicharge in 2 hours). By fabricating thicker conventional electrodes, an improved reversible capacity of {approx}1000 mAh/g is achieved, but the rate capability decreases. To achieve high-rate capability, we applied a thin Al{sub 2}O{sub 3} atomic layer deposition coating to enable the high volume expansion and prevent mechanical degradation. Also, we recently reported that a thin ALD Al{sub 2}O{sub 3} coating can enable natural graphite (NG) electrodes to exhibit remarkably durable cycling at 50 C. Additionally, Al{sub 2}O{sub 3} ALD films with a thickness of 2 to 4 {angstrom} have been shown to allow LiCoO{sub 2} to exhibit 89% capacity retention after 120 charge-discharge cycles performed up to 4.5 V vs. Li/Li{sup +}. Capacity fade at this high voltage is generally caused by oxidative decomposition of the electrolyte or cobalt dissolution. We have recently fabricated full cells of NG and LiCoO{sub 2} and coated both electrodes, one or the other electrode as well as neither electrode. In creating these full cells, we observed some surprising results that lead us to obtain a greater understanding of the ALD coatings. In a different approach we have employed carbon single-wall nanotubes (SWNTs) to synthesize binder-free, high-rate capability electrodes, with 95 wt.% active materials. In one case, Fe{sub 3}O{sub 4} nanorods are employed as the active storage anode material. Recently, we have also employed this method to demonstrate improved conductivity and highly improved rate capability for a LiNi{sub 0.4}Mn{sub 0.4}Co{sub 0.2}O{sub 2

  3. Refractory two-dimensional hole gas on hydrogenated diamond surface

    SciTech Connect (OSTI)

    Hiraiwa, Atsushi; Daicho, Akira; Kurihara, Shinichiro; Yokoyama, Yuki; Kawarada, Hiroshi

    2012-12-15

    Use of two-dimensional hole gas (2DHG), induced on a hydrogenated diamond surface, is a solution to overcoming one of demerits of diamond, i.e., deep energy levels of impurities. This 2DHG is affected by its environment and accordingly needs a passivation film to get a stable device operation especially at high temperature. In response to this requirement, we achieved the high-reliability passivation forming an Al{sub 2}O{sub 3} film on the diamond surface using an atomic-layer-deposition (ALD) method with an H{sub 2}O oxidant at 450 Degree-Sign C. The 2DHG thus protected survived air annealing at 550 Degree-Sign C for an hour, establishing a stable high-temperature operation of 2DHG devices in air. In part, this achievement is based on high stability of C-H bonds up to 870 Degree-Sign C in vacuum and above 450 Degree-Sign C in an H{sub 2}O-containing environment as in the ALD. Chemically, this stability is supported by the fact that both the thermal decomposition of C-H bonds and reaction between C-H bonds and H{sub 2}O are endothermic processes. It makes a stark contrast to the instability of Si-H bonds, which decompose even at room temperature being exposed to atomic hydrogen. In this respect, the diamond 2DHG devices are also promising as power devices expectedly being free from many instability phenomena, such as hot carrier effect and negative-bias temperature instability, associated with Si devices. As to adsorbate, which is the other prerequisite for 2DHG, it desorbed in vacuum below 250 Degree-Sign C, and accordingly some new adsorbates should have adsorbed during the ALD at 450 Degree-Sign C. As a clue to this question, we certainly confirmed that some adsorbates, other than those at room temperature, adsorbed in air above 100 Degree-Sign C and remained at least up to 290 Degree-Sign C. The identification of these adsorbates is open for further investigation.

  4. Tularosa Basin Play Fairway Analysis: Weights of Evidence; Mineralogy, and Temperature Anomaly Maps

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Adam Brandt

    2015-11-15

    This submission has two shapefiles and a tiff image. The weights of evidence analysis was applied to data representing heat of the earth and fracture permeability using training sites around the Southwest; this is shown in the tiff image. A shapefile of surface temperature anomalies was derived from the statistical analysis of Advanced Spaceborne Thermal Emission and Reflection Radiometer (ASTER) thermal infrared data which had been converted to surface temperatures; these anomalies have not been field checked. The second shapefile shows outcrop mineralogy which originally mapped by the New Mexico Bureau of Geology and Mineral Resources, and supplemented with mineralogic information related to rock fracability risk for EGS. Further metadata can be found within each file.

  5. Sandia National Laboratories is a multi-program laboratory managed and operated

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Photos placed in horizontal position with e ven a mount o f w hite s pace b etween p hotos a nd h eader To replace these boxes with i mages o pen t he slide m aster Energy---Water---Food---Ecosystems Global I nterdependencies a nd T rends 1 Howard P assell, S andia N ational L abs hdpasse@sandia.gov Two m ain m essages 1. Energy, w ater, a griculture/food, a nd e cosystem s ervices are a ll c onnected. § This i s a n o b rainer-one E arth, o ne a tmosphere, o ne b iosphere, etc. § How a

  6. Simulation studies of self-organization of microtubules and molecular motors.

    SciTech Connect (OSTI)

    Jian, Z.; Karpeev, D.; Aranson, I. S.; Bates, P. W.; Michigan State Univ.

    2008-05-01

    We perform Monte Carlo type simulation studies of self-organization of microtubules interacting with molecular motors. We model microtubules as stiff polar rods of equal length exhibiting anisotropic diffusion in the plane. The molecular motors are implicitly introduced by specifying certain probabilistic collision rules resulting in realignment of the rods. This approximation of the complicated microtubule-motor interaction by a simple instant collision allows us to bypass the 'computational bottlenecks' associated with the details of the diffusion and the dynamics of motors and the reorientation of microtubules. Consequently, we are able to perform simulations of large ensembles of microtubules and motors on a very large time scale. This simple model reproduces all important phenomenology observed in in vitro experiments: Formation of vortices for low motor density and raylike asters and bundles for higher motor density.

  7. Geothermal Target Areas in Colorado as Identified by Remote Sensing Techniques

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Hussein, Khalid

    2012-02-01

    Citation Information: Originator: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Publication Date: 2012 Title: Target Areas Edition: First Publication Information: Publication Place: Earth Science & Observation Center, Cooperative Institute for Research in Environmental Science, University of Colorado, Boulder, Colorado Publisher: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Description: This layer contains the areas identified as targets of potential geothermal activity. The Criteria used to identify the target areas include: hot/warm surface exposures modeled from ASTER/Landsat satellite imagery and geological characteristics, alteration mineral commonly associated with hot springs (clays, Si, and FeOx) modeled from ASTER and Landsat data, Coloradodo Geological Survey (CGS) known thermal hot springs/wells and heat-flow data points, Colorado deep-seated fault zones, weakened basement identified from isostatic gravity data, and Colorado sedimentary and topographic characteristics Spatial Domain: Extent: Top: 4546251.530446 m Left: 151398.567298 m Right: 502919.587395 m Bottom: 4095100.068903 m Contact Information: Contact Organization: Earth Science &Observation Center (ESOC), CIRES, University of Colorado at Boulder Contact Person: Khalid Hussein Address: CIRES, Ekeley Building Earth Science & Observation Center (ESOC) 216 UCB City: Boulder State: CO Postal Code: 80309-0216 Country: USA Contact Telephone: 303-492-6782 Spatial Reference Information: Coordinate System: Universal Transverse Mercator (UTM) WGS’1984 Zone 13N False Easting: 500000.00000000 False Northing: 0.00000000 Central Meridian: -105.00000000 Scale Factor: 0.99960000 Latitude of Origin: 0.00000000 Linear Unit: Meter Datum: World Geodetic System ’1984 (WGS ’1984) Prime Meridian: Greenwich Angular Unit: Degree Digital Form: Format Name: Shape file

  8. A study of the Oklahoma City urban heat island using ground measurements and remote sensing

    SciTech Connect (OSTI)

    Brown, M. J.; Ivey, A.; McPherson, T. N.; Boswell, D.; Pardyjak, E. R.

    2004-01-01

    Measurements of temperature and position were collected during the night from an instrumented van on routes through Oklahoma City and the rural outskirts. The measurements were taken as part of the Joint URBAN 2003 Tracer Field Experiment conducted in Oklahoma City from June 29, 2003 to July 30, 2003 (Allwine et al., 2004). The instrumented van was driven over four primary routes that included legs from the downtown core to four different 'rural' areas. Each route went through residential areas and most often went by a line of permanently fixed temperature probes (Allwine et al., 2004) for cross-checking purposes. Each route took from 20 to 40 minutes to complete. Based on seven nights of data, initial analyses indicate that there was a temperature difference of 0.5-6.5 C between the urban core and nearby 'rural' areas. Analyses also suggest that there were significant fine scale temperature differences over distances of tens of meters within the city and in the nearby rural areas. The temperature measurements that were collected are intended to supplement the meteorological measurements taken during the Joint URBAN 2003 Field Experiment, to assess the importance of the urban heat island phenomenon in Oklahoma City, and to test new urban canopy parameterizations that have been developed for regional scale meteorological codes (e.g., Chin et al., 2000; Holt and Shi, 2004). In addition to the ground measurements, skin temperature measurements were also analyzed from remotely sensed images taken from the Earth Observing System's Advanced Spaceborne Thermal Emission and Reflection Radiometer (ASTER). A surface kinetic temperature thermal infrared image captured by the ASTER of the Oklahoma City area on July 21, 2001 was analyzed within ESRI's ArcGIS 8.3 to correlate variations in temperature with land use type. Analysis of this imagery suggests distinct variations in temperature across different land use categories. Through the use of remotely sensed imagery we hope to

  9. Shape-selective catalysts for Fischer-Tropsch chemistry : atomic layer deposition of active catalytic metals. Activity report : January 1, 2005 - September 30, 2005.

    SciTech Connect (OSTI)

    Cronauer, D. C.

    2011-04-15

    Argonne National Laboratory is carrying out a research program to create, prepare, and evaluate catalysts to promote Fischer-Tropsch (FT) chemistry - specifically, the reaction of hydrogen with carbon monoxide to form long-chain hydrocarbons. In addition to needing high activity, it is desirable that the catalysts have high selectivity and stability with respect to both mechanical strength and aging properties. The broad goal is to produce diesel fraction components and avoiding excess yields of both light hydrocarbons and heavy waxes. Originally the goal was to prepare shape-selective catalysts that would limit the formation of long-chain products and yet retain the active metal sites in a protected 'cage.' Such catalysts were prepared with silica-containing fractal cages. The activity was essentially the same as that of catalysts without the cages. We are currently awaiting follow-up experiments to determine the attrition strength of these catalysts. A second experimental stage was undertaken to prepare and evaluate active FT catalysts formed by atomic-layer deposition [ALD] of active components on supported membranes and particulate supports. The concept was that of depositing active metals (i.e. ruthenium, iron or cobalt) upon membranes with well defined flow channels of small diameter and length such that the catalytic activity and product molecular weight distribution could be controlled. In order to rapidly evaluate the catalytic membranes, the ALD coating processes were performed in an 'exploratory mode' in which ALD procedures from the literature appropriate for coating flat surfaces were applied to the high surface area membranes. Consequently, the Fe and Ru loadings in the membranes were likely to be smaller than those expected for complete monolayer coverage. In addition, there was likely to be significant variation in the Fe and Ru loading among the membranes due to difficulties in nucleating these materials on the aluminum oxide surfaces. The first

  10. Epitaxial Growth of GaN-based LEDs on Simple Sacrificial Substrates

    SciTech Connect (OSTI)

    Ian Ferguson; Chris Summers

    2009-12-31

    The objective of this project is to produce alternative substrate technologies for GaN-based LEDs by developing an ALD interlayer of Al{sub 2}O{sub 3} on sacrificial substrates such as ZnO and Si. A sacrificial substrate is used for device growth that can easily be removed using a wet chemical etchant leaving only the thin GaN epi-layer. After substrate removal, the GaN LED chip can then be mounted in several different ways to a metal heat sink/reflector and light extraction techniques can then be applied to the chip and compared for performance. Success in this work will lead to high efficiency LED devices with a simple low cost fabrication method and high product yield as stated by DOE goals for its solid state lighting portfolio.

  11. Nanostructure templating using low temperature atomic layer deposition

    DOE Patents [OSTI]

    Grubbs, Robert K.; Bogart, Gregory R.; Rogers, John A.

    2011-12-20

    Methods are described for making nanostructures that are mechanically, chemically and thermally stable at desired elevated temperatures, from nanostructure templates having a stability temperature that is less than the desired elevated temperature. The methods comprise depositing by atomic layer deposition (ALD) structural layers that are stable at the desired elevated temperatures, onto a template employing a graded temperature deposition scheme. At least one structural layer is deposited at an initial temperature that is less than or equal to the stability temperature of the template, and subsequent depositions made at incrementally increased deposition temperatures until the desired elevated temperature stability is achieved. Nanostructure templates include three dimensional (3D) polymeric templates having features on the order of 100 nm fabricated by proximity field nanopatterning (PnP) methods.

  12. Plasmonic materials based on ZnO films and their potential for developing broadband middle-infrared absorbers

    SciTech Connect (OSTI)

    Kesim, Yunus E. Battal, Enes; Okyay, Ali K.

    2014-07-15

    Noble metals such as gold and silver have been extensively used for plasmonic applications due to their ability to support plasmons, yet they suffer from high intrinsic losses. Alternative plasmonic materials that offer low loss and tunability are desired for a new generation of efficient and agile devices. In this paper, atomic layer deposition (ALD) grown ZnO is investigated as a candidate material for plasmonic applications. Optical constants of ZnO are investigated along with figures of merit pertaining to plasmonic waveguides. We show that ZnO can alleviate the trade-off between propagation length and mode confinement width owing to tunable dielectric properties. In order to demonstrate plasmonic resonances, we simulate a grating structure and computationally demonstrate an ultra-wide-band (415 ?m) infrared absorber.

  13. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    SciTech Connect (OSTI)

    El-Atab, Nazek; Rizk, Ayman; Nayfeh, Ammar; Okyay, Ali K.; UNAM-National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara

    2013-11-15

    A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO{sub 2} layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (V{sub t}) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V{sub t} shift, the memory with CrO{sub 2} layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO{sub 2} layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  14. RCRA Facility Investigation Plan K-1004 Area Lab Drain and the K-1007-B Pond - Oak Ridge Gaseous Diffusion Plant - Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    ORGDP, Martin Marietta Energy Systems Inc.

    1988-12-01

    Within the confines of the Oak Ridge Gaseous Diffusion Plant (ORGDP) are hazardous waste treatment, storage, and disposal facilities; some are in operation while others are no longer in use. these solid waste management units (SWMUs) are subject to assessment by the US Environmental Protection Agency (EPA). The RCRA Facility Investigation (RFI) Plans are scheduled to be submitted for all units during calendar years 1987 and 1988. The RFI Plan - General Document (K/HS-132) includes information applicable to all the ORGDP SMWUs and serves as a reference document for the site-specific RFI plans. This document is the site-specific RFI Plan for the K-1004 Area Lab Drain (ALD) and the K-1007-B Pond. This plan is based upon requirements described in the draft document, RFI Guidance, Vols. I-IV, December 1987 (EPA 530/SW-87-001). This unit is regulated by Section 3004(u) of the 1984 Hazardous and Solid Waste Amendments (HSWA) to the Resource Conservation Recovery Act (RCRA). Contained within this document are geographical, historical, operational, geological, and hydrological data specific to the K-1004 ALD and the K-1007-B Pond. The potential for release of contamination through the various media to receptors is addressed. A sampling plan is proposed to further determine the extent (if any) of release of contamination to the surrounding environment. Included are health and safety procedures to be followed when implementing the sampling plan. Quality control (QC) procedures for remedial action occurring on the Oak Ridge Reservation (ORR) are presented in 'The Environmental Surveillance Procedures Quality Control Program, Martin Marietta Energy Systems, Inc., (ESH/Sub/87-21706/1), and quality assurance (QA) guidelines for ORGDP investigations are contained in The K-25 Remedial Actions Program Quality Assurance Plan, K/HS-231.

  15. New Homogeneous Standards by Atomic Layer Deposition for Synchrotron X-ray Fluorescence and Absorption Spectroscopies.

    SciTech Connect (OSTI)

    Butterworth, A.L.; Becker, N.; Gainsforth, Z.; Lanzirotti, A.; Newville, M.; Proslier, T.; Stodolna, J.; Sutton, S.; Tyliszczak, T.; Westphal, A.J.; Zasadzinski, J.

    2012-03-13

    better than 25 nm. Limiting factors for Stardust STXM analyses were self-imposed limits of photon dose due to radiation damage concerns, and significant attenuation of <1500 eV X-rays by {approx}80{micro}m thick, {approx}25 mg/cm{sup 3} density silica aerogel capture medium. In practice, the ISPE team characterized the major, light elements using STXM (O, Mg, Al, Si) and the heavier minor and trace elements using SXRF. The two data sets overlapped only with minor Fe and Ni ({approx}1% mass abundance), providing few quantitative cross-checks. New improved standards for cross calibration are essential for consortium-based analyses of Stardust interstellar and cometary particles, IDPs. Indeed, they have far reaching application across the whole synchrotron-based analytical community. We have synthesized three ALD multilayers simultaneously on silicon nitride membranes and silicon and characterized them using RBS (on Si), XRF (on Si{sub 3}N{sub 4}) and STXM/XAS (holey Si{sub 3}N{sub 4}). The systems we have started to work with are Al-Zn-Fe and Y-Mg-Er. We have found these ALD multi-layers to be uniform at {micro}m- to nm scales, and have found excellent consistency between four analytical techniques so far. The ALD films can also be used as a standard for e-beam instruments, eg., TEM EELS or EDX. After some early issues with the consistency of coatings to the back-side of the membrane windows, we are confident to be able to show multi-analytical agreement to within 10%. As the precision improves, we can use the new standards to verify or improve the tabulated cross-sections.

  16. High Extraction Phosphors for Solid State Lighting

    SciTech Connect (OSTI)

    Chris Summers; Hisham Menkara; Brent Wagner

    2011-09-30

    these material systems, the encapsulation of ZnSeS particle phosphors and ZnSeS screens with Al{sub 2}O{sub 3} and TiO{sub 2} using ALD was shown to improve the stability by >8X and also increased the luminescence efficiency due to improved surface passivation and optical coupling. A large-volume fluidized bed ALD system was designed that can be adapted to a commercial ALD or vapor deposition system. Throughout the program, optical simulations were developed to evaluate and optimize various phosphor mixtures and device configurations. For example, to define the scattering properties of nanophosphors in an LED device or in a stand-off screen geometry. Also this work significantly promoted and assisted in the implementation of realistic phosphor material models into commercial modeling programs.

  17. Impact of La{sub 2}O{sub 3} interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks deposited by atomic-layer-deposition

    SciTech Connect (OSTI)

    Chang, C.-Y. Takenaka, M.; Takagi, S.; Ichikawa, O.; Osada, T.; Hata, M.; Yamada, H.

    2015-08-28

    We examine the electrical properties of atomic layer deposition (ALD) La{sub 2}O{sub 3}/InGaAs and Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor (MOS) capacitors. It is found that the thick ALD La{sub 2}O{sub 3}/InGaAs interface provides low interface state density (D{sub it}) with the minimum value of ∼3 × 10{sup 11} cm{sup −2} eV{sup −1}, which is attributable to the excellent La{sub 2}O{sub 3} passivation effect for InGaAs surfaces. It is observed, on the other hand, that there are a large amount of slow traps and border traps in La{sub 2}O{sub 3}. In order to simultaneously satisfy low D{sub it} and small hysteresis, the effectiveness of Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks with ultrathin La{sub 2}O{sub 3} interfacial layers is in addition evaluated. The reduction of the La{sub 2}O{sub 3} thickness to 0.4 nm in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks leads to the decrease in hysteresis. On the other hand, D{sub it} of the Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs interfaces becomes higher than that of the La{sub 2}O{sub 3}/InGaAs ones, attributable to the diffusion of Al{sub 2}O{sub 3} through La{sub 2}O{sub 3} into InGaAs and resulting modification of the La{sub 2}O{sub 3}/InGaAs interface structure. As a result of the effective passivation effect of La{sub 2}O{sub 3} on InGaAs, however, the Al{sub 2}O{sub 3}/10 cycle (0.4 nm) La{sub 2}O{sub 3}/InGaAs gate stacks can realize still lower D{sub it} with maintaining small hysteresis and low leakage current than the conventional Al{sub 2}O{sub 3}/InGaAs MOS interfaces.

  18. Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone

    SciTech Connect (OSTI)

    Warner, Ellis J.; Gladfelter, Wayne L.; Johnson, Forrest; Campbell, Stephen A.

    2015-03-15

    Silicon or glass substrates exposed to sequential pulses of tetraethyltin (TET) and ozone (O{sub 3}) were coated with thin films of SnO{sub 2}. Self-limiting deposition was found using 8 s pulse times, and a uniform thickness per cycle (TPC) of 0.2 nm/cycle was observed in a small, yet reproducible, temperature window from 290 to 320 °C. The as-deposited, stoichiometric SnO{sub 2} films were amorphous and transparent above 400 nm. Interspersing pulses of diethylzinc and O{sub 3} among the TET:O{sub 3} pulses resulted in deposition of zinc tin oxide films, where the fraction of tin, defined as [at. % Sn/(at. % Sn + at. % Zn)], was controlled by the ratio of TET pulses, specifically n{sub TET}:(n{sub TET} + n{sub DEZ}) where n{sub TET} and n{sub DEZ} are the number of precursor/O{sub 3} subcycles within each atomic layer deposition (ALD) supercycle. Based on film thickness and composition measurements, the TET pulse time required to reach saturation in the TPC of SnO{sub 2} on ZnO surfaces was increased to >30 s. Under these conditions, film stoichiometry as a function of the TET pulse ratio was consistent with the model devised by Elliott and Nilsen. The as-deposited zinc tin oxide (ZTO) films were amorphous and remained so even after annealing at 450 °C in air for 1 h. The optical bandgap of the transparent ZTO films increased as the tin concentration increased. Hall measurements established that the n-type ZTO carrier concentration was 3 × 10{sup 17} and 4 × 10{sup 18} cm{sup −3} for fractional tin concentrations of 0.28 and 0.63, respectively. The carrier mobility decreased as the concentration of tin increased. A broken gap pn junction was fabricated using ALD-deposited ZTO and a sputtered layer of cuprous oxide. The junction demonstrated ohmic behavior and low resistance consistent with similar junctions prepared using sputter-deposited ZTO.

  19. Comparison of oilseed yields: a preliminary review

    SciTech Connect (OSTI)

    Duke, J.A.; Bagby, M.O.

    1982-01-01

    It was assumed that for most oilseed crops, 90% of the oil yield might be considered as profit. To compare oil seeds, pertinent portions of the yield and energy paragraphs from a summary published by Dr. Duke for DOE Grant No. 59-2246-1-6-054-0 with Dr. Bagby as ADODR were reproduced. The seed yields ranged from 200 to 14,000 kg/ha, the low one too low to consider and the high one suspiciously high. The yield of 14,000 kg oil per hectare is equivalent to more than 30 barrels of oil per hectare. The energy species included ambrette, tung-oil tree, cashew, wood-oil tree, mu-oil tree, peanut, mustard greens; rape, colza; black mustard, turnip, safflower, colocynth, coconut, crambe, African oil palm, soybean, cotton, sunflower, Eastern black walnut, Engligh walnut, meadow foam, flax, macadamia nuts, opium poppy, perilla, almond, castorbean, Chinese tallow tree, sesame, jojoba, yellow mustard, stokes' aster, and Zanzibar oilvine. 1 table. (DP)

  20. Adjusting lidar-derived digital terrain models in coastal marshes based on estimated aboveground biomass density

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Medeiros, Stephen; Hagen, Scott; Weishampel, John; Angelo, James

    2015-03-25

    Digital elevation models (DEMs) derived from airborne lidar are traditionally unreliable in coastal salt marshes due to the inability of the laser to penetrate the dense grasses and reach the underlying soil. To that end, we present a novel processing methodology that uses ASTER Band 2 (visible red), an interferometric SAR (IfSAR) digital surface model, and lidar-derived canopy height to classify biomass density using both a three-class scheme (high, medium and low) and a two-class scheme (high and low). Elevation adjustments associated with these classes using both median and quartile approaches were applied to adjust lidar-derived elevation values closer tomore » true bare earth elevation. The performance of the method was tested on 229 elevation points in the lower Apalachicola River Marsh. The two-class quartile-based adjusted DEM produced the best results, reducing the RMS error in elevation from 0.65 m to 0.40 m, a 38% improvement. The raw mean errors for the lidar DEM and the adjusted DEM were 0.61 ± 0.24 m and 0.32 ± 0.24 m, respectively, thereby reducing the high bias by approximately 49%.« less

  1. Adjusting lidar-derived digital terrain models in coastal marshes based on estimated aboveground biomass density

    SciTech Connect (OSTI)

    Medeiros, Stephen; Hagen, Scott; Weishampel, John; Angelo, James

    2015-03-25

    Digital elevation models (DEMs) derived from airborne lidar are traditionally unreliable in coastal salt marshes due to the inability of the laser to penetrate the dense grasses and reach the underlying soil. To that end, we present a novel processing methodology that uses ASTER Band 2 (visible red), an interferometric SAR (IfSAR) digital surface model, and lidar-derived canopy height to classify biomass density using both a three-class scheme (high, medium and low) and a two-class scheme (high and low). Elevation adjustments associated with these classes using both median and quartile approaches were applied to adjust lidar-derived elevation values closer to true bare earth elevation. The performance of the method was tested on 229 elevation points in the lower Apalachicola River Marsh. The two-class quartile-based adjusted DEM produced the best results, reducing the RMS error in elevation from 0.65 m to 0.40 m, a 38% improvement. The raw mean errors for the lidar DEM and the adjusted DEM were 0.61 ± 0.24 m and 0.32 ± 0.24 m, respectively, thereby reducing the high bias by approximately 49%.

  2. MTI Ground Truth Collection Ivanpah Dry Lake Bed, California, May, July, and August 2002

    SciTech Connect (OSTI)

    David L. Hawley

    2002-10-01

    A multi-agency collaboration successfully completed a series of ground truth measurements at the Ivanpah Dry Lake bed during FY 2002. Four collection attempts were made: two in May, one in July, and one in August. The objective was to collect ground-based measurements and airborne data during Multispectral Thermal Imager satellite overpasses. The measurements were to aid in the calibration of the satellite data and in algorithm validation. The Remote Sensing Laboratory, Las Vegas, Nevada; the National Aeronautics and Space Administration; Los Alamos National Laboratory; and the University of Arizona participated in the effort. Field instrumentation included a sun photometer on loan from the University of Arizona and the Remote Sensing Laboratory's radiosonde weather balloon, weather station, thermal infrared radiometers, and spectral radiometer. In addition, three reflectance panels were deployed; certain tests used water baths set at two different temperatures. Local weather data as well as sky photography were collected. May presented several excellent days; however, it was later learned that tasking for the satellite was not available. A combination of cloud cover, wind, and dusty conditions limited useful data collections to two days, August 28 and 29. Despite less-than- ideal weather conditions, the data for the Multispectral Thermal Imager calibration were obtained. A unique set of circumstances also allowed data collection during overpasses of the LANDSAT7 and ASTER satellites.

  3. Deep Washington photometry of inconspicuous star cluster candidates in the Large Magellanic Cloud

    SciTech Connect (OSTI)

    Choudhury, Samyaday; Subramaniam, Annapurni; Piatti, Andrés E.

    2015-02-01

    We present deep Washington photometry of 45 poorly populated star cluster candidates in the Large Magellanic Cloud (LMC). We have performed a systematic study to estimate the parameters of the cluster candidates by matching theoretical isochrones to the cleaned and dereddened cluster color–magnitude diagrams. We were able to estimate the basic parameters for 33 clusters, out of which 23 are identified as single clusters and 10 are found to be members of double clusters. The other 12 cluster candidates have been classified as possible clusters/asterisms. About 50% of the true clusters are in the 100–300 Myr age range, whereas some are older or younger. We have discussed the distribution of age, location, and reddening with respect to field, as well as the size of true clusters. The sizes and masses of the studied sample are found to be similar to that of open clusters in the Milky Way. Our study adds to the lower end of cluster mass distribution in the LMC, suggesting that the LMC, apart from hosting rich clusters, also has formed small, less massive open clusters in the 100–300 Myr age range.

  4. Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

    SciTech Connect (OSTI)

    Huang, Jie; Lucero, Antonio T.; Cheng, Lanxia; Kim, Jiyoung; Hwang, Hyeon Jun; Ha, Min-Woo

    2015-03-23

    In this study, we have deposited organic-inorganic hybrid semiconducting hydroquinone (HQ)/zinc oxide (ZnO) superlattices using molecular-atomic layer deposition, which enables accurate control of film thickness, excellent uniformity, and sharp interfaces at a low deposition temperature (150 °C). Self-limiting growth of organic layers is observed for the HQ precursor on ZnO surface. Nano-laminates were prepared by varying the number of HQ to ZnO cycles in order to investigate the physical and electrical effects of different HQ to ZnO ratios. It is indicated that the addition of HQ layer results in enhanced mobility and reduced carrier concentration. The highest Hall mobility of approximately 2.3 cm{sup 2}/V·s and the lowest n-type carrier concentration of approximately 1.0 × 10{sup 18}/cm{sup 3} were achieved with the organic-inorganic superlattice deposited with a ratio of 10 ZnO cycles to 1 HQ cycle. This study offers an approach to tune the electrical transport characteristics of ALD ZnO matrix thin films using an organic dopant. Moreover, with organic embedment, this nano-laminate material may be useful for flexible electronics.

  5. Modification of Ni-Rich FCG NMC and NCA Cathodes by Atomic Layer Deposition: Preventing Surface Phase Transitions for High-Voltage Lithium-Ion Batteries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mohanty, Debasish; Dahlberg, Kevin; King, David M.; David, Lamuel A.; Sefat, Athena S.; Wood, David L.; Daniel, Claus; Dhar, Subhash; Mahajan, Vishal; Lee, Myongjai; et al

    2016-05-26

    The energy density of current lithium-ion batteries (LIBs) based on layered LiMO2 cathodes (M=Ni, Mn, Co: NMC; M=Ni, Co, Al: NCA) needs to be improved significantly in order to compete with internal combustion engines and allow for widespread implementation of electric vehicles (EVs). In this report, we show that atomic layer deposition (ALD) of titania (TiO2) and alumina (Al2O3) on Ni-rich FCG NMC and NCA active material particles could substantially improve LIB performance and allow for increased upper cutoff voltage (UCV) during charging, which delivers significantly increased specific energy utilization. Our results show that Al2O3 coating improved the NMC cyclingmore » performance by 40% and the NCA cycling performance by 34% at 1C/₋1C with respectively 4.35V and 4.4V UCV in 2Ah pouch cells. High resolution TEM/SAED structural characterization revealed that Al2O3 coatings prevented surface-initiated layered-to-spinel phase transitions in coated materials which were prevalent in uncoated materials. Lastly, EIS confirmed that Al2O3-coated materials had significantly lower increase in the charge transfer component of impedance during cycling. In conclusion, the ability to mitigate degradation mechanisms for Ni-rich NMC and NCA illustrated in this report provides insight into a method to enable the performance of high-voltage LIBs.« less

  6. Memristive behavior in a junctionless flash memory cell

    SciTech Connect (OSTI)

    Orak, Ikram; Ürel, Mustafa; Dana, Aykutlu; Bakan, Gokhan

    2015-06-08

    We report charge storage based memristive operation of a junctionless thin film flash memory cell when it is operated as a two terminal device by grounding the gate. Unlike memristors based on nanoionics, the presented device mode, which we refer to as the flashristor mode, potentially allows greater control over the memristive properties, allowing rational design. The mode is demonstrated using a depletion type n-channel ZnO transistor grown by atomic layer deposition (ALD), with HfO{sub 2} as the tunnel dielectric, Al{sub 2}O{sub 3} as the control dielectric, and non-stoichiometric silicon nitride as the charge storage layer. The device exhibits the pinched hysteresis of a memristor and in the unoptimized device, R{sub off}/R{sub on} ratios of about 3 are presented with low operating voltages below 5 V. A simplified model predicts R{sub off}/R{sub on} ratios can be improved significantly by adjusting the native threshold voltage of the devices. The repeatability of the resistive switching is excellent and devices exhibit 10{sup 6 }s retention time, which can, in principle, be improved by engineering the gate stack and storage layer properties. The flashristor mode can find use in analog information processing applications, such as neuromorphic computing, where well-behaving and highly repeatable memristive properties are desirable.

  7. Ferroelectricity in undoped hafnium oxide

    SciTech Connect (OSTI)

    Polakowski, Patrick; Müller, Johannes

    2015-06-08

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P{sub r} of up to 10 μC cm{sup −2} as well as a read/write endurance of 1.6 × 10{sup 5} cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems.

  8. Optimization of synthesis protocols to control the nanostructure and the morphology of metal oxide thin films for memristive applications

    SciTech Connect (OSTI)

    Baldi, G. Bosi, M.; Attolini, G.; Berzina, T.; Mosca, R.; Ponraj, J. S.; Iannotta, S.

    2015-03-10

    We propose a multi-technique approach based on in-vacuum synthesis of metal oxides to optimize the memristive properties of devices that use a metal oxide thin film as insulating layer. Pulsed Microplasma Cluster Source (PMCS) is based on supersonic beams seeded by clusters of the metal oxide. Nanocrystalline TiO{sub 2} thin films can be grown at room temperature, controlling the oxide stoichiometry from titanium metal up to a significant oxygen excess. Pulsed Electron beam Deposition (PED) is suitable to grow crystalline thin films on large areas, a step towards producing device arrays with controlled morphology and stoichiometry. Atomic Layer Deposition (ALD) is a powerful technique to grow materials layer-by-layer, finely controlling the chemical and structural properties of the film up to thickness of 50-80 nm. We will present a few examples of metal-insulator-metal structures showing a pinched hysteresis loop in their current-voltage characteristic. The structure, stoichiometry and morphology of the metal oxide layer, either aluminum oxide or titanium dioxide, is investigated by means of scanning electron microscopy (SEM) and by Raman scattering.

  9. Inert gas enhanced laser-assisted purification of platinum electron-beam-induced deposits

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; Fowlkes, Jason Davidson; Rack, Philip D.

    2015-06-30

    Electron-beam-induced deposition patterns, with composition of PtC5, were purified using a pulsed laser-induced purification reaction to erode the amorphous carbon matrix and form pure platinum deposits. Enhanced mobility of residual H2O molecules via a localized injection of inert Ar–H2 (4%) is attributed to be the reactive gas species for purification of the deposits. Surface purification of deposits was realized at laser exposure times as low as 0.1 s. The ex situ purification reaction in the deposit interior was shown to be rate-limited by reactive gas diffusion into the deposit, and deposit contraction associated with the purification process caused some lossmore » of shape retention. To circumvent the intrinsic flaws of the ex situ anneal process, in situ deposition and purification techniques were explored that resemble a direct write atomic layer deposition (ALD) process. First, we explored a laser-assisted electron-beam-induced deposition (LAEBID) process augmented with reactive gas that resulted in a 75% carbon reduction compared to standard EBID. Lastly, a sequential deposition plus purification process was also developed and resulted in deposition of pure platinum deposits with high fidelity and shape retention.« less

  10. Inert gas enhanced laser-assisted purification of platinum electron-beam-induced deposits

    SciTech Connect (OSTI)

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; Fowlkes, Jason Davidson; Rack, Philip D.

    2015-06-30

    Electron-beam-induced deposition patterns, with composition of PtC5, were purified using a pulsed laser-induced purification reaction to erode the amorphous carbon matrix and form pure platinum deposits. Enhanced mobility of residual H2O molecules via a localized injection of inert Ar–H2 (4%) is attributed to be the reactive gas species for purification of the deposits. Surface purification of deposits was realized at laser exposure times as low as 0.1 s. The ex situ purification reaction in the deposit interior was shown to be rate-limited by reactive gas diffusion into the deposit, and deposit contraction associated with the purification process caused some loss of shape retention. To circumvent the intrinsic flaws of the ex situ anneal process, in situ deposition and purification techniques were explored that resemble a direct write atomic layer deposition (ALD) process. First, we explored a laser-assisted electron-beam-induced deposition (LAEBID) process augmented with reactive gas that resulted in a 75% carbon reduction compared to standard EBID. Lastly, a sequential deposition plus purification process was also developed and resulted in deposition of pure platinum deposits with high fidelity and shape retention.

  11. Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al{sub 2}O{sub 3} films and Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks

    SciTech Connect (OSTI)

    Keuning, W.; Weijer, P. van de; Lifka, H.; Kessels, W. M. M.; Creatore, M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Philips Research Laboratories, High Tech Campus 4, P.O. Box WAG12, 5656 AE Eindhoven (Netherlands); Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

    2012-01-15

    Al{sub 2}O{sub 3} thin films synthesized by plasma-enhanced atomic layer deposition (ALD) at room temperature (25 deg. C) have been tested as water vapor permeation barriers for organic light emitting diode devices. Silicon nitride films (a-SiN{sub x}:H) deposited by plasma-enhanced chemical vapor deposition served as reference and were used to develop Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks. On the basis of Ca test measurements, a very low intrinsic water vapor transmission rate of {<=} 2 x 10{sup -6} g m{sup -2} day{sup -1} and 4 x 10{sup -6} g m{sup -2} day{sup -1} (20 deg. C/50% relative humidity) were found for 20-40 nm Al{sub 2}O{sub 3} and 300 nm a-SiN{sub x}:H films, respectively. The cathode particle coverage was a factor of 4 better for the Al{sub 2}O{sub 3} films compared to the a-SiN{sub x}:H films and an average of 0.12 defects per cm{sup 2} was obtained for a stack consisting of three barrier layers (Al{sub 2}O{sub 3}/a-SiN{sub x}:H/Al{sub 2}O{sub 3}).

  12. Investigation of Some Transparent Metal Oxides as Damp Heat Protective Coating for CIGS Solar Cells: Preprint

    SciTech Connect (OSTI)

    Pern, F. J.; Yan, F.; Zaaunbrecher, B.; To, B.; Perkins, J.; Noufi, R.

    2012-10-01

    We investigated the protective effectiveness of some transparent metal oxides (TMO) on CIGS solar cell coupons against damp heat (DH) exposure at 85oC and 85% relative humidity (RH). Sputter-deposited bilayer ZnO (BZO) with up to 0.5-um Al-doped ZnO (AZO) layer and 0.2-um bilayer InZnO were used as 'inherent' part of device structure on CdS/CIGS/Mo/SLG. Sputter-deposited 0.2-um ZnSnO and atomic layer deposited (ALD) 0.1-um Al2O3 were used as overcoat on typical BZO/CdS/CIGS/Mo/SLG solar cells. The results were all negative -- all TMO-coated CIGS cells exhibited substantial degradation in DH. Combining the optical photographs, PL and EL imaging, SEM surface micro-morphology, coupled with XRD, I-V and QE measurements, the causes of the device degradations are attributed to hydrolytic corrosion, flaking, micro-cracking, and delamination induced by the DH moisture. Mechanical stress and decrease in crystallinity (grain size effect) could be additional degrading factors for thicker AZO grown on CdS/CIGS.

  13. Potential effects of four Flaming Gorge Dam hydropower operational scenarios on riparian vegetation of the Green River, Utah and Colorado

    SciTech Connect (OSTI)

    LaGory, K.E.; Van Lonkhuyzen, R.A.

    1995-06-01

    Four hydropower operational scenarios at Flaming Gorge Dam were evaluated to determine their potential effects on riparian vegetation along the Green River in Utah and Colorado. Data collected in June 1992 indicated that elevation above the river had the largest influence on plant distribution. A lower riparian zone occupied the area between the approximate elevations of 800 and 4,200-cfs flows--the area within the range of hydropower operational releases. The lower zone was dominated by wetland plants such as cattail, common spikerush, coyote willow, juncus, and carex. An upper riparian zone was above the elevation of historical maximum power plant releases from the dam (4,200 cfs), and it generally supported plants adapted to mesic, nonwetland conditions. Common species in the upper zone included box elder, rabbitbrush, grasses, golden aster, and scouring rush. Multispectral aerial videography of the Green River was collected in May and June 1992 to determine the relationship between flow and the areas of water and the riparian zone. From these relationships, it was estimated that the upper zone would decrease in extent by about 5% with year-round high fluctuation, seasonally adjusted high fluctuation, and seasonally adjusted moderate fluctuation, but it would increase by about 8% under seasonally adjusted steady flow. The lower zone would increase by about 13% for both year-round and seasonally adjusted high fluctuation scenarios but would decrease by about 40% and 74% for seasonally adjusted moderate fluctuation and steady flows, respectively. These changes are considered to be relatively minor and would leave pre-dam riparian vegetation unaffected. Occasional high releases above power plant capacity would be needed for long-term maintenance of this relict vegetation.

  14. Systematic evaluation of satellite remote sensing for identifying uranium mines and mills.

    SciTech Connect (OSTI)

    Blair, Dianna Sue; Stork, Christopher Lyle; Smartt, Heidi Anne; Smith, Jody Lynn

    2006-01-01

    In this report, we systematically evaluate the ability of current-generation, satellite-based spectroscopic sensors to distinguish uranium mines and mills from other mineral mining and milling operations. We perform this systematic evaluation by (1) outlining the remote, spectroscopic signal generation process, (2) documenting the capabilities of current commercial satellite systems, (3) systematically comparing the uranium mining and milling process to other mineral mining and milling operations, and (4) identifying the most promising observables associated with uranium mining and milling that can be identified using satellite remote sensing. The Ranger uranium mine and mill in Australia serves as a case study where we apply and test the techniques developed in this systematic analysis. Based on literature research of mineral mining and milling practices, we develop a decision tree which utilizes the information contained in one or more observables to determine whether uranium is possibly being mined and/or milled at a given site. Promising observables associated with uranium mining and milling at the Ranger site included in the decision tree are uranium ore, sulfur, the uranium pregnant leach liquor, ammonia, and uranyl compounds and sulfate ion disposed of in the tailings pond. Based on the size, concentration, and spectral characteristics of these promising observables, we then determine whether these observables can be identified using current commercial satellite systems, namely Hyperion, ASTER, and Quickbird. We conclude that the only promising observables at Ranger that can be uniquely identified using a current commercial satellite system (notably Hyperion) are magnesium chlorite in the open pit mine and the sulfur stockpile. Based on the identified magnesium chlorite and sulfur observables, the decision tree narrows the possible mineral candidates at Ranger to uranium, copper, zinc, manganese, vanadium, the rare earths, and phosphorus, all of which are

  15. Living with genome instability: the adaptation of phytoplasmas todiverse environments of their insect and plant hosts

    SciTech Connect (OSTI)

    Bai, Xiaodong; Zhang, Jianhua; Ewing, Adam; Miller, Sally A.; Radek, Agnes; Shevchenko, Dimitriy; Tsukerman, Kiryl; Walunas, Theresa; Lapidus, Alla; Campbell, John W.; Hogenhout Saskia A.

    2006-02-17

    Phytoplasmas (Candidatus Phytoplasma, Class Mollicutes) cause disease in hundreds of economically important plants, and are obligately transmitted by sap-feeding insects of the order Hemiptera, mainly leafhoppers and psyllids. The 706,569-bp chromosome and four plasmids of aster yellows phytoplasma strain witches broom (AY-WB) were sequenced and compared to the onion yellows phytoplasma strain M (OY-M) genome. The phytoplasmas have small repeat-rich genomes. The repeated DNAs are organized into large clusters, potential mobile units (PMUs), which contain tra5 insertion sequences (ISs), and specialized sigma factors and membrane proteins. So far, PMUs are unique to phytoplasmas. Compared to mycoplasmas, phytoplasmas lack several recombination and DNA modification functions, and therefore phytoplasmas probably use different mechanisms of recombination, likely involving PMUs, for the creation of variability, allowing phytoplasmas to adjust to the diverse environments of plants and insects. The irregular GC skews and presence of ISs and large repeated sequences in the AY-WB and OY-M genomes are indicative of high genomic plasticity. Nevertheless, segments of {approx}250 kb, located between genes lplA and glnQ are syntenic between the two phytoplasmas, contain the majority of the metabolic genes and no ISs. AY-WB is further along in the reductive evolution process than OY-M. The AY-WB genome is {approx}154 kb smaller than the OY-M genome, primarily as a result of fewer multicopy sequences, including PMUs. Further, AY-WB lacks genes that are truncated and are part of incomplete pathways in OY-M. This is the first comparative phytoplasma genome analysis and report of the existence of PMUs in phytoplasma genomes.

  16. Three-dimensional modeling of direct-drive cryogenic implosions on OMEGA

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Igumenshchev, Igor V.; Goncharov, V. N.; Marshall, F. J.; Knauer, J. P.; Campbell, E. M.; Forrest, C. J.; Froula, D. H.; Glebov, V. Yu; McCrory, R. L.; Regan, S. P.; et al

    2016-05-04

    In this study, the effects of large-scale (with Legendre modes ≲10) laser-imposed nonuniformities in direct-drive cryogenic implosions on the OMEGA Laser System are investigated using three-dimensional hydrodynamic simulations performed using the newly developed code ASTER. Sources of these nonuniformities include an illumination pattern produced by 60 OMEGA laser beams; capsule offsets (~10 to 20 μm); and imperfect pointing, power balance, and timing of the beams (with typical σrms ~10 microns, 10%, and 5 ps, respectively). Two implosion designs using 26-kJ triple-picket laser pulses were studied: a nominal design, in which an 874-μm-diameter capsule is illuminated by about the same-diameter beams,more » and a more hydrodynamically efficient ''R75" design using a 900-μm-diameter capsule and beams of 75% of this diameter. Simulations show that nonuniformities caused by capsule offsets and beam imbalance have the largest effect on implosion performance. These nonuniformities lead to significant distortions of implosion cores, resulting in an increased residual kinetic energy and incomplete stagnation. The shape of distorted cores can be well characterized using neutron images, but is less represented by 4-8 keV x-ray images. Simulated neutron spectra from perturbed implosions show large directional variations because of bulk motion effects and up to an ~2 keV variation of the hot-spot temperature inferred from these spectra. The R75 design suffers more from illumination nonuniformities. Simulations show an advantage of this design over the nominal design when the target offset and beam power imbalance σrms are reduced to less than 5 μm and 5%, respectively.« less

  17. ChEAS Data: The Chequamegon Ecosystem Atmosphere Study

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Davis, Kenneth J. [Penn State

    The Chequamegon Ecosystem-Atmosphere Study (ChEAS) is a multi-organizational research effort studying biosphere/atmosphere interactions within a northern mixed forest in Northern Wisconsin. A primary goal is to understand the processes controlling forest-atmosphere exchange of carbon dioxide and the response of these processes to climate change. Another primary goal is to bridge the gap between canopy-scale flux measurements and the global CO2 flask sampling network. The ChEAS flux towers participate in AmeriFlux, and the region is an EOS-validation site. The WLEF tower is a NOAA-CMDL CO2 sampling site. ChEAS sites are primarily located within or near the Chequamegon-Nicolet National Forest in northern Wisconsin, with one site in the Ottawa National Forest in the upper peninsula of Michigan. Current studies observe forest/atmosphere exchange of carbon dioxide at canopy and regional scales, forest floor respiration, photosynthesis and transpiration at the leaf level and use models to scale to canopy and regional levels. EOS-validation studies quantitatively assess the land cover of the area using remote sensing and conduct extensive ground truthing of new remote sensing data (i.e. ASTER and MODIS). Atmospheric remote sensing work is aimed at understanding atmospheric boundary layer dynamics, the role of entrainment in regulating the carbon dioxide mixing ratio profiles through the lower troposphere, and feedback between boundary layer dynamics and vegetation (especially via the hydrologic cycle). Airborne studies have included include balloon, kite and aircraft observations of the CO2 profile in the troposphere.

  18. Hepatic lipid profiling of deer mice fed ethanol using {sup 1}H and {sup 31}P NMR spectroscopy: A dose-dependent subchronic study

    SciTech Connect (OSTI)

    Fernando, Harshica; Bhopale, Kamlesh K.; Boor, Paul J.; Ansari, G.A. Shakeel; Kaphalia, Bhupendra S.

    2012-11-01

    Chronic alcohol abuse is a 2nd major cause of liver disease resulting in significant morbidity and mortality. Alcoholic liver disease (ALD) is characterized by a wide spectrum of pathologies starting from fat accumulation (steatosis) in early reversible stage to inflammation with or without fibrosis and cirrhosis in later irreversible stages. Previously, we reported significant steatosis in the livers of hepatic alcohol dehydrogenase (ADH)-deficient (ADH{sup −}) vs. hepatic ADH-normal (ADH{sup +}) deer mice fed 4% ethanol daily for 2 months [Bhopale et al., 2006, Alcohol 39, 179–188]. However, ADH{sup −} deer mice fed 4% ethanol also showed a significant mortality. Therefore, a dose-dependent study was conducted to understand the mechanism and identify lipid(s) involved in the development of ethanol-induced fatty liver. ADH{sup −} and ADH{sup +} deer mice fed 1, 2 or 3.5% ethanol daily for 2 months and fatty infiltration in the livers were evaluated by histology and by measuring dry weights of extracted lipids. Lipid metabolomic changes in extracted lipids were determined by proton ({sup 1}H) and {sup 31}phosphorus ({sup 31}P) nuclear magnetic resonance (NMR) spectroscopy. The NMR data was analyzed by hierarchical clustering (HC) and principle component analysis (PCA) for pattern recognition. Extensive vacuolization by histology and significantly increased dry weights of total lipids found only in the livers of ADH{sup −} deer mice fed 3.5% ethanol vs. pair-fed controls suggest a dose-dependent formation of fatty liver in ADH{sup −} deer mouse model. Analysis of NMR data of ADH{sup −} deer mice fed 3.5% ethanol vs. pair-fed controls shows increases for total cholesterol, esterified cholesterol, fatty acid methyl esters (FAMEs), triacylglycerides and unsaturation, and decreases for free cholesterol, phospholipids and allylic and diallylic protons. Certain classes of neutral lipids (cholesterol esters, fatty acyl chain (-COCH{sub 2}-) and FAMEs) were

  19. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    SciTech Connect (OSTI)

    Wu, Tian-Li Groeseneken, Guido; Marcon, Denis; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan; Bakeroot, Benoit; Roelofs, Robin

    2015-08-31

    In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

  20. Fabrication of nanoporous membranes for tuning microbial interactions and biochemical reactions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shankles, Peter G.; Timm, Andrea C.; Doktycz, Mitchel J.; Retterer, Scott T.

    2015-10-21

    Here we describe how new strategies for combining conventional photo- and soft- lithographic techniques with high-resolution patterning and etching strategies are needed in order to produce multi-scale fluidic platforms that address the full range of functional scales seen in complex biological and chemical systems. The smallest resolution required for an application often dictates the fabrication method used. Micromachining and micro-powder blasting yield higher throughput, but lack the resolution needed to fully address biological and chemical systems at the cellular and molecular scales. In contrast, techniques such as electron beam lithography or nanoimprinting allow nanoscale resolution, but are traditionally considered costlymore » and slow. Other techniques such as photolithography or soft lithography have characteristics between these extremes. Combining these techniques to fabricate multi-scale or hybrid fluidics allows fundamental biological and chemical questions can be answered. In this study, a combination of photolithography and electron beam lithography are used to produce two multi-scale fluidic devices that incorporate porous membranes into complex fluidic networks to control the flow of energy, information, and materials in chemical form. In the first device, materials and energy were used to support chemical reactions. A nanoporous membrane fabricated with e-beam lithography separates two parallel, serpentine channels. Photolithography was used to write microfluidic channels around the membrane. The pores were written at 150nm and reduced in size with silicon dioxide deposition from plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD). Using this method, the molecular weight cutoff (MWCO) of the membrane can be adapted to the system of interest. In the second approach, photolithography was used to fabricate 200nm thin pores. The pores confined microbes and allowed energy replenishment from a media perfusion

  1. Fabrication of nanoporous membranes for tuning microbial interactions and biochemical reactions

    SciTech Connect (OSTI)

    Shankles, Peter G.; Timm, Andrea C.; Doktycz, Mitchel J.; Retterer, Scott T.

    2015-10-21

    Here we describe how new strategies for combining conventional photo- and soft- lithographic techniques with high-resolution patterning and etching strategies are needed in order to produce multi-scale fluidic platforms that address the full range of functional scales seen in complex biological and chemical systems. The smallest resolution required for an application often dictates the fabrication method used. Micromachining and micro-powder blasting yield higher throughput, but lack the resolution needed to fully address biological and chemical systems at the cellular and molecular scales. In contrast, techniques such as electron beam lithography or nanoimprinting allow nanoscale resolution, but are traditionally considered costly and slow. Other techniques such as photolithography or soft lithography have characteristics between these extremes. Combining these techniques to fabricate multi-scale or hybrid fluidics allows fundamental biological and chemical questions can be answered. In this study, a combination of photolithography and electron beam lithography are used to produce two multi-scale fluidic devices that incorporate porous membranes into complex fluidic networks to control the flow of energy, information, and materials in chemical form. In the first device, materials and energy were used to support chemical reactions. A nanoporous membrane fabricated with e-beam lithography separates two parallel, serpentine channels. Photolithography was used to write microfluidic channels around the membrane. The pores were written at 150nm and reduced in size with silicon dioxide deposition from plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD). Using this method, the molecular weight cutoff (MWCO) of the membrane can be adapted to the system of interest. In the second approach, photolithography was used to fabricate 200nm thin pores. The pores confined microbes and allowed energy replenishment from a media perfusion channel. The

  2. Fabrication and characterization of Al{sub 2}O{sub 3} /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    SciTech Connect (OSTI)

    Zhang, Ruiying; Zhu, Jian; Zhang, Zhen; Wang, Yanyan; Qiu, Bocang; Liu, Xuehua; Zhang, Jinping; Zhang, Yi; Fang, Qi; Ren, Zhong; Bai, Yu

    2015-12-15

    We report on our fabrication and characterization of Al{sub 2}O{sub 3}/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al{sub 2}O{sub 3} layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al{sub 2}O{sub 3}thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al{sub 2}O{sub 3} film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al{sub 2}O{sub 3} film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10{sup −9} A/cm{sup 2} over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiO{sub x} layer formed between the interface of Si and the Al{sub 2}O{sub 3} film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al{sub 2}O{sub 3} coated CND structures is a truly viable approach to achieving higher device

  3. Liver proteomics in progressive alcoholic steatosis

    SciTech Connect (OSTI)

    Fernando, Harshica; Wiktorowicz, John E.; Soman, Kizhake V.; Kaphalia, Bhupendra S.; Khan, M. Firoze; Shakeel Ansari, G.A.

    2013-02-01

    Fatty liver is an early stage of alcoholic and nonalcoholic liver disease (ALD and NALD) that progresses to steatohepatitis and other irreversible conditions. In this study, we identified proteins that were differentially expressed in the livers of rats fed 5% ethanol in a LieberDeCarli diet daily for 1 and 3 months by discovery proteomics (two-dimensional gel electrophoresis and mass spectrometry) and non-parametric modeling (Multivariate Adaptive Regression Splines). Hepatic fatty infiltration was significantly higher in ethanol-fed animals as compared to controls, and more pronounced at 3 months of ethanol feeding. Discovery proteomics identified changes in the expression of proteins involved in alcohol, lipid, and amino acid metabolism after ethanol feeding. At 1 and 3 months, 12 and 15 different proteins were differentially expressed. Of the identified proteins, down regulation of alcohol dehydrogenase (? 1.6) at 1 month and up regulation of aldehyde dehydrogenase (2.1) at 3 months could be a protective/adaptive mechanism against ethanol toxicity. In addition, betaine-homocysteine S-methyltransferase 2 a protein responsible for methionine metabolism and previously implicated in fatty liver development was significantly up regulated (1.4) at ethanol-induced fatty liver stage (1 month) while peroxiredoxin-1 was down regulated (? 1.5) at late fatty liver stage (3 months). Nonparametric analysis of the protein spots yielded fewer proteins and narrowed the list of possible markers and identified D-dopachrome tautomerase (? 1.7, at 3 months) as a possible marker for ethanol-induced early steatohepatitis. The observed differential regulation of proteins have potential to serve as biomarker signature for the detection of steatosis and its progression to steatohepatitis once validated in plasma/serum. -- Graphical abstract: The figure shows the Hierarchial cluster analysis of differentially expressed protein spots obtained after ethanol feeding for 1 (13) and 3 (4

  4. Novel Dual-Functional Membrane for Controlling Carbon Dioxide Emissions from Fossil Fuel Power Plants

    SciTech Connect (OSTI)

    C. Brinker; George Xomeritakis; C.-Y. Tsai; Ying-Bing Jiang

    2009-04-30

    CO{sub 2} captured from coal-fired power plants represents three-quarters of the total cost of an entire carbon sequestration process. Conventional amine absorption or cryogenic separation requires high capital investment and is very energy intensive. Our novel membrane process is energy efficient with great potential for economical CO{sub 2} capture. Three classes of microporous sol-gel derived silica-based membranes were developed for selective CO{sub 2} removal under simulated flue gas conditions (SFG), e.g. feed of 10% vol. CO{sub 22} in N{sub 2}, 1 atm total pressure, T = 50-60 C, RH>50%, SO2>10 ppm. A novel class of amine-functional microporous silica membranes was prepared using an amine-derivatized alkoxysilane precursor, exhibiting enhanced (>70) CO{sub 2}:N{sub 2} selectivity in the presence of H{sub 2}O vapor, but its CO{sub 2} permeance was lagging (<1 MPU). Pure siliceous membranes showed higher CO{sub 2} permeance (1.5-2 MPU) but subsequent densification occurred under prolonged SFG conditions. We incorporated NiO in the microporous network up to a loading of Ni:Si = 0.2 to retard densification and achieved CO2 permeance of 0.5 MPU and CO{sub 2}:N{sub 2} selectivity of 50 after 163 h exposure to SFG conditions. However, CO{sub 2} permeance should reach greater than 2.0 MPU in order to achieve the cost of electricity (COE) goal set by DOE. We introduced the atomic layer deposition (ALD), a molecular deposition technique that substantially reduces membrane thickness with intent to improve permeance and selectivity. The deposition technique also allows the incorporation of Ni or Ag cations by proper selection of metallorganic precursors. In addition, preliminary economic analysis provides a sensitivity study on the performance and cost of the proposed membranes for CO{sub 2} capture. Significant progress has been made toward the practical applications for CO{sub 2} capture. (1 MPU = 1.0 cm{sup 3}(STP){center_dot}cm-2{center_dot}min-1{center_dot}atm-1)

  5. Laboratory Directed Research and Development Program Activities for FY 2008.

    SciTech Connect (OSTI)

    Looney,J.P.; Fox, K.

    2009-04-01

    Brookhaven National Laboratory (BNL) is a multidisciplinary laboratory that maintains a primary mission focus the physical sciences, energy sciences, and life sciences, with additional expertise in environmental sciences, energy technologies, and national security. It is managed by Brookhaven Science Associates, LLC, (BSA) under contract with the U. S. Department of Energy (DOE). BNL's Fiscal year 2008 budget was $531.6 million. There are about 2,800 employees, and another 4,300 guest scientists and students who come each year to use the Laboratory's facilities and work with the staff. The BNL Laboratory Directed Research and Development (LDRD) Program reports its status to the U.S. Department of Energy (DOE) annually in March, as required by DOE Order 413.2B, 'Laboratory Directed Research and Development,' April 19, 2006, and the Roles, Responsibilities, and Guidelines for Laboratory Directed Research and Developlnent at the Department of Energy/National Nuclear Security Administration Laboratories dated June 13, 2006. Accordingly, this is our Annual Report in which we describe the Purpose, Approach, Technical Progress and Results, and Specific Accomplishments of all LDRD projects that received funding during Fiscal Year 2008. BNL expended $12 million during Fiscal Year 2008 in support of 69 projects. The program has two categories, the annual Open Call LDRDs and Strategic LDRDs, which combine to meet the overall objectives of the LDRD Program. Proposals are solicited annually for review and approval concurrent with the next fiscal year, October 1. For the open call for proposals, an LDRD Selection Committee, comprised of the Associate Laboratory Directors (ALDs) for the Scientific Directorates, an equal number of scientists recommended by the Brookhaven Council, plus the Assistant Laboratory Director for Policy and Strategic Planning, review the proposals submitted in response to the solicitation. The Open Can LDRD category emphasizes innovative research concepts

  6. Shape-selective catalysts for Fischer-Tropsch chemistry : iron-containing particulate catalysts. Activity report : January 1, 2001 - December 31, 2004.

    SciTech Connect (OSTI)

    Cronauer, D.; Chemical Engineering

    2006-05-12

    Argonne National Laboratory is carrying out a research program to create, prepare, and evaluate catalysts to promote Fischer-Tropsch (FT) chemistry--specifically, the reaction of hydrogen with carbon monoxide to form long-chain hydrocarbons. In addition to needing high activity, it is desirable that the catalysts have high selectivity and stability with respect to both mechanical strength and aging properties. It is desired that selectivity be directed toward producing diesel fraction components and avoiding excess yields of both light hydrocarbons and heavy waxes. The goal is to produce shape-selective catalysts that have the potential to limit the formation of longchain products and yet retain the active metal sites in a protected 'cage'. This cage also restricts their loss by attrition during use in slurry-bed reactors. The first stage of this program was to prepare and evaluate iron-containing particulate catalysts. This activity report centers upon this first stage of experimentation with particulate FT catalysts. (For reference, a second experimental stage is under way to prepare and evaluate active FT catalysts formed by atomic-layer deposition [ALD] of active components on supported membranes.) To date, experimentation has centered upon the evaluation of a sample of iron-based, spray-dried catalyst prepared by B.H. Davis of the Center of Applied Energy Research (CAER) and samples of his catalyst onto which inorganic 'shells' were deposited. The reference CAER catalyst contained a high level of dispersed fine particles, a portion of which was removed by differential settling. Reaction conditions have been established using a FT laboratory unit such that reasonable levels of CO conversion can be achieved, where therefore a valid catalyst comparison can be made. A wide range of catalytic activities was observed with SiO{sub 2}-coated FT catalysts. Two techniques were used for SiO{sub 2}coating. The first involved a caustic precipitation of SiO{sub 2} from an

  7. Analysis of Potential Leakage Pathways and Mineralization within Caprocks for Geologic Storage of CO2

    SciTech Connect (OSTI)

    Evans, James

    2013-05-01

    We used a multifaceted approach to investigate the nature of caprocks above, and the interface between, reservoir-quality rocks that might serve as targets for carbon storage. Fieldwork in southeastern Utah examined the regional- to m-scale nature of faults and fractures across the sedimentiological interfaces. We also used microscopic analyses and mechanical modeling to examine the question as to how the contacts between units interact, and how fractures may allow fluids to move from reservoirs to caprock. Regional-­scale analyses using ASTER data enabled us to identify location of alteration, which led to site-­specific studies of deformation and fluid flow. In the Jurassic Carmel Formation, a seal for the Navajo Sandstone, we evaluated mesoscale variability in fracture density and morphology and variability in elastic moduli in the Jurassic Carmel Formation, a proposed seal to the underlying Navajo Sandstone for CO2 geosequestration. By combining mechano-stratigraphic outcrop observations with elastic moduli derived from wireline log data, we characterize the variability in fracture pattern and morphology with the observed variability in rock strength within this heterolithic top seal. Outcrop inventories of discontinuities show fracture densities decrease as bed thickness increases and fracture propagation morphology across lithologic interfaces vary with changing interface type. Dynamic elastic moduli, calculated from wireline log data, show that Young’s modulus varies by up to 40 GPa across depositional interfaces, and by an average of 3 GPa across the reservoir/seal interface. We expect that the mesoscale changes in rock strength will affect the distributions of localized stress and thereby influence fracture propagation and fluid flow behavior within the seal. These data provide a means to closely tie outcrop observations to those derived from subsurface data and estimates of subsurface rock strength. We also studied damage zones associated

  8. Innovative Methodology for Detection of Fracture-Controlled Sweet Spots in the Northern Appalachian Basin

    SciTech Connect (OSTI)

    Robert Jacobi; John Fountain; Stuart Loewenstein; Edward DeRidder; Bruce Hart

    2007-03-31

    rift faults have been episodically reactivated, and a few of these faults extend through the entire stratigraphic section. The ENE-trending faults and N-striking transfer zones controlled the development of the T/BR grabens. In both the Seneca Lake and Cayuga Lake regions, we found more FIDs than Landsat lineaments, both in terms of individual FIDs and trends of FIDs. Our fused Landsat/ASTER image provided more lineaments, but the structural framework inferred from these lineaments is incomplete even for the fused image. Individual lineaments may not predict surface FIDs (within 500m). However, an individual lineament that has been groundtruthed by outcrop FIDs can be used as a proxy for the trend of intense fracturing. Aeromagnetics and seismic reflection data across the discovery fields west of Keuka Lake demonstrate that the fields terminate on the east against northerly-striking faults that extend from Precambrian basement to, in some cases, the surface; the fields terminate in the west at N- and NW-striking faults. Seismic and well log data show that the fields must be compartmentalized, since different parts of the same field show different histories of development. T/BR fields south of the research area also terminate (on the east) against northerly-trending lineaments which we suggest mark faults. Phase II, completed in 2006, consisted of collection and analysis of an oriented, horizontal core retrieved from one of the T/BR fields in a graben south of the field area. The field is located along ENE-trending EarthSat (1997) lineaments, similar to that hypothesized for the study area. The horizontal core shows much evidence for reactivation along the ENE-trending faults, with multiple events of vein development and both horizontal and vertical stylolite growth. Horizontal veins that post- and pre-date other vein sets indicate that at least two orogenic phases (separated by unloading) affected vein development. Many of the veins and releasing bend features