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1

GA-AL-SC | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

2

High Efficiency Large Area AlGaAs/GaAs Concentrator Solar Cells  

Science Journals Connector (OSTI)

A 1-kWp ( peak at 100 mw/cm2 incident power dencity ) concentrating photovoltaic array with 180 square Presnel plastic lenses and AlGaAs/GaAs concentrator solar cells has been constructed. The AlGaAs/GaAs concetr...

S. Yoshida; K. Mitsui; T. Oda; Y. Yukimoto…

1981-01-01T23:59:59.000Z

3

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network [OSTI]

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

4

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study  

SciTech Connect (OSTI)

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

2010-10-14T23:59:59.000Z

5

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

6

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

7

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

8

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect (OSTI)

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

9

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect (OSTI)

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

10

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network [OSTI]

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

11

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect (OSTI)

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

12

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

13

Reaktive Molekularstrahlepitaxie und Charakterisierung von GaN/(Al,Ga)N-Heterostrukturen auf SiC(0001).  

E-Print Network [OSTI]

??Thema dieser Arbeit ist die Synthese von hexagonalen GaN/(Al,Ga)N-Heterostrukturen mittels reaktiver Molekularstrahlepitaxie (MBE) auf SiC(0001)-Substraten. Der Einfluß der Wachstumsbedingungen auf die strukturellen, morphologischen, optischen und… (more)

Thamm, Andreas

2001-01-01T23:59:59.000Z

14

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

2013-11-25T23:59:59.000Z

15

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect (OSTI)

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

16

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network [OSTI]

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

17

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells  

SciTech Connect (OSTI)

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R. [Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Québec (Canada)] [Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Québec (Canada); Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K. [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)] [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Fafard, S. [Cyrium Technologies Inc., Ottawa, ON (Canada)] [Cyrium Technologies Inc., Ottawa, ON (Canada)

2013-09-27T23:59:59.000Z

18

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

19

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance  

Science Journals Connector (OSTI)

A contacted electroreflectance technique was used to investigate AlGaN/GaN heterostructures and their intrinsic electric field-induced properties. By studying variations in the electroreflectance with applied field spectral features associated with the AlGaN barrier the two-dimensional electron gas at the interface and bulk GaN were identified. Barrier-layer composition and electric field were determined from the AlGaN Franz–Keldysh oscillations. For a high mobilityheterostructure grown on SiC measured AlGaN polarizationelectric field and two-dimensional electron gas density approached values predicted by a standard bandstructure model. The two-dimensional electron gas produced a broad field-tunable first derivative electroreflectance feature. With a dielectric function calculation we describe the line shape and relative amplitude of the two-dimensional electron gas electroreflectance feature for a wide range of electron density and applied field values.

S. R. Kurtz; A. A. Allerman; D. D. Koleske; A. G. Baca; R. D. Briggs

2004-01-01T23:59:59.000Z

20

Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures  

SciTech Connect (OSTI)

The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)

Chel'nyi, A A; Aluev, A V; Maslov, S V [M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

2004-01-31T23:59:59.000Z

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN  

E-Print Network [OSTI]

. Hasama, "Subpicosecond saturation of intersubband absorption in (CdS/ZnSe)/BeTe quantum well waveguides. Cho, "Intersubband absorption at ~ 1.55 m in well- and modulation-doped GaN/AlGaN multiple quantum

22

Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer  

SciTech Connect (OSTI)

Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup ?2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H. [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan); Kachi, T. [Toyota Central R and D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Sugimoto, M. [Toyota Motor Corporation, 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309 (Japan)

2013-12-04T23:59:59.000Z

23

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect (OSTI)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

24

Composition pulling effect and strain relief mechanism in AlGaN/AlN distributed Bragg reflectors  

SciTech Connect (OSTI)

We report on the composition pulling effect and strain relief mechanism in AlGaN/AlN distributed Bragg reflectors (DBRs) grown on GaN template/{alpha}-Al{sub 2}O{sub 3}(0001) by metal organic chemical vapor deposition. The reciprocal space mapping contours reveal that these DBRs are coherently grown. Cross-section transmission electron microscopy image of the AlGaN/AlN DBRs and the energy-dispersive x-ray analysis indicate that an AlGaN layer with gradient Al composition is located between the Al{sub 0.4}Ga{sub 0.6}N and AlN layers along the [0001] direction. It is attributed to the fact that Ga atoms in AlGaN are pulled and segregated to the upper layer by the strain. The density of strain energy is estimated to reduce more than one order by forming this quasi-three-sublayer structure comparing to the designed bi-sublayer structure.

Liu, B.; Zhang, R.; Ji, X. L.; Fu, D. Y.; Xie, Z. L.; Chen, D. J.; Chen, P.; Jiang, R. L.; Zheng, Y. D. [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093 (China); Zheng, J. G. [California Institute for Telecommunications and Information Technology, University of California, Irvine, California 92697-2800 (United States)

2011-06-27T23:59:59.000Z

25

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

26

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

27

GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization  

E-Print Network [OSTI]

radiation hardness than Si, GaAs, CdS and GaN, therefore it should be suitable for space applications. Last novel optoelectronic devices circumventing the problem of p-type doping of ZnO. In such Al devices become reality: the problem of p-type doping of ZnO. So far, there is no way to reliably produce

Wetzel, Christian M.

28

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

29

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

30

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network [OSTI]

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

31

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network [OSTI]

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

32

Ga[sub 13], Al[sub 13], GaAl[sub 12], and chromium-pillared montmorillonites: Acidity and reactivity for cumene conversion  

SciTech Connect (OSTI)

A comparison has been made of the acidic characters of a series of metal polyoxocation pillar interlayered clay minerals (M-PILCs) by studying the infrared spectra of adsorbed pyridine. These comparisons were made for Ga[sub 13]-, Al[sub 13]- and GaAl[sub 12]-PILCs, and for Na[sup +]-exchanged montmorillonite (Na-STx-1). The Ga[sub 13]-PILC, was found to exhibit the strongest Lewis acid sites, followed by the AL[sub 13]-, and GaAl[sub 12]-PILCs and then by the Ns-STx-1. The relative number of Lewis acid sites, however, was found to be much greater for the GaAl[sub 12]-PILC, particularly after calcination at higher temperatures, indicating that the Ga[sub 13] Lewis acid sites did not have as high a thermal stability. The Broensted acidic characters for the pillared clays depend on the pillar, and follow the general decreasing order of abundance of GaAl[sub 12]-, Al[sub 13], and Ga[sub 13]-PILC when expressed as absorbance per unit mass. When the acidities per unit surface area were estimated, however, the Ga[sub 13]-PILCs were found to have the greatest number. This indicated that while the pillars contribute to the PILC acidities primarily through increasing the exposed phyllosilicate sheet surface areas, there is also a significant effect arising from the acidic characters of the pillars themselves. The dehydrogenation activities of Ga[sub 13]-, GaAl[sub 12]-, Al[sub 13]-, and Na-STx-1, in addition to a chromium polyoxocation-PILC, were compared by observing the products formed upon reaction with the model compound cumene. The Ga[sub 13]- and chromium-PILCs and the Na-Stx-1 exhibited almost exclusively dehydrogenation activities, whereas the Al[sub 13]- and GaAl[sub 12]-PILCs exhibited both cracking and dehydrogenation behaviors. These results prove that the pillars themselves can very strongly effect the catalytic activities of the PILCs. 3 refs., 6 figs., 2 tabs.

Bradley, S.M.; Kydd, R.A. (Univ. of Calgary, Alberta (Canada))

1993-05-01T23:59:59.000Z

33

Temperature dependence of optical transitions in AlGaAs  

Science Journals Connector (OSTI)

AlGaAs structures with different aluminum concentration (x=0.0 0.17 0.30 and 0.40) were characterized by photoluminescence and photoreflectance techniques. The temperature dependence of optical transitions in the temperature ranging from 2 to 300 K were investigated. Y. P. Varshni [Physica (Utrecht) 34 194 (1967)] L. Viña et al. [Phys. Rev. B 30 1979 (1984)] and R. Pässler [Phys. Status Solidi B 200 155 (1997)] models were used to fit the experimental points. The Pässler model gave the best adjustment to the experimental points. The tree models showed that the empirical parameters obtained through the adjustment of the experimental data in the three different models are aluminum composition dependent in the ternary alloy.

S. A. Lourenço; I. F. L. Dias; J. L. Duarte; E. Laureto; E. A. Meneses; J. R. Leite; I. Mazzaro

2001-01-01T23:59:59.000Z

34

Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells  

SciTech Connect (OSTI)

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

2000-07-01T23:59:59.000Z

35

Magnetic-field effects on quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells  

Science Journals Connector (OSTI)

We have used the variational procedure in the effective-mass and nondegenerate parabolic band approximations in order to investigate the effects of a magnetic field on the exciton effective mass and dispersion in semiconductor heterostructures. Calculations are performed for bulk GaAs, and two-dimensional and quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells for applied magnetic fields perpendicular to the layers. A simple hydrogenlike envelope wave function provides the expected behavior for the exciton dispersion in a wide range of the center-of-mass momenta, and an analytical expression for the exciton effective mass is obtained. Present results lead to a magnetic-field dependent exciton effective mass and dispersion in quite good agreement with available experimental measurements in coupled GaAs?(Ga,Al)As quantum wells.

E. Reyes-Gómez, L. E. Oliveira, and M. de Dios-Leyva

2005-01-14T23:59:59.000Z

36

MOCVD Growth of AlGaInN for UV Emitters  

SciTech Connect (OSTI)

Issues related to the growth of nitride-based UV emitters are investigated in this work. More than 100 times of improved in the optical efficiency of the GaN active region can be attained with a combination of raising the growth pressure and introducing a small amount of indium. The unique issue in the UV emitter concerning the use of AlGaN for confinement and the associated tensile cracking is also investigated. They showed that the quaternary AlGaInN is potentially capable of providing confinement to GaN and GaN:In active regions while maintaining lattice matching to GaN, unlike the AlGaN ternary system.

Crawford, Mary; Han, Jung

1999-07-07T23:59:59.000Z

37

Short-period superlattices of AlN/Al0.08Ga0.92N grown on AlN substrates S. A. Nikishin,a)  

E-Print Network [OSTI]

American Institute of Physics. [DOI: 10.1063/1.1815056] Layers of AlGaN with high content of AlN suffer (LEDs) and solar blind pho- todetectors. Short period superlattices (SPSLs) of AlN/Al0.08Ga0.92N maxima. The analysis of the central peak of the RSM shows a high degree of lateral co- herence of 44 m

Holtz, Mark

38

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

39

Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics  

SciTech Connect (OSTI)

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

2002-10-01T23:59:59.000Z

40

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE Identification of the Parasitic Chemical Reactions during AlGaN OMVPE by J. R. Creighton, M. E. Coltrin, and W. G. Breiland Motivation-GaN and AlGaN alloys are ex- tremely important materials with widespread applications for optoelectronics (e.g. solid state lighting) and high power electronics. Or- ganometallic vapor phase epitaxy (OMVPE) is the primary deposition methodology, but it suf- fers from several growth chemistry anomalies. Growth rate and alloy composition are often a sensitive function of temperature and other reac- tor variables. These factors make the AlGaN OMVPE process difficult to control and in- crease the cost of the material. Conventional wisdom has been that the non-ideal OMVPE behavior is due to parasitic "pre-reactions" be-

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41

Interband transitions in molecular?beam?epitaxial Al x Ga1?x As/GaAs  

Science Journals Connector (OSTI)

Interband transition energies for Al x Ga1?x As layers grown by molecular?beam epitaxy(MBE) techniques have been determined using the electrolyte electroreflectance (EER) technique. The observed data fit quadratic relations for E 0 E 0+?0 E 1 and E 1+?1 to describe variations of energy with composition. Although the x values were not accurately known the internal consistency of the data is excellent. Given a single bowing parameter we show that accurate values of x can be determined. The EER technique can provide x values with an accuracy better than 0.02 and information on changes in x as small as 0.002. It is thus ideally suited for studying MBE materials.

J. L. Aubel; U. K. Reddy; S. Sundaram; W. T. Beard; James Comas

1985-01-01T23:59:59.000Z

42

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

43

Energy relaxation of hot electrons in lattice-matched AlInN/AlN/GaN heterostructures  

SciTech Connect (OSTI)

Using the dielectric continuum model, hot-electron power dissipation and energy relaxation times are calculated for a typical lattice-matched AlInN/AlN/GaN heterostructure, including effects of hot phonons and screening from the mobile electrons. The calculated power dissipation and energy relaxation times are very close to the experimental data.

Zhang, J.-Z.; Dyson, A. [Department of Physics, University of Hull, Hull, HU6 7RX (United Kingdom); Ridley, B. K. [School of Computing Science and Electronic Engineering, University of Essex, Colchester, CO4 3SQ (United Kingdom)

2013-12-04T23:59:59.000Z

44

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy  

SciTech Connect (OSTI)

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 × 10{sup ?5} cm{sup ?1}, and the length of SFs is less than 15 nm.

Shao, Jiayi; Malis, Oana [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, Dmitri N. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)] [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Edmunds, Colin [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)] [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 49707 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 49707 (United States)

2013-12-02T23:59:59.000Z

45

Transmission electron microscopy studies of GaN/gamma-LiAlO 2 heterostructures.  

E-Print Network [OSTI]

??Die vorliegende Arbeit beschaeftigt sich mit dem strukturellen Aufbau von (1-100) M-plane GaN, das mit plasmaunterstuetzter Molekularstrahlepitaxie auf gamma-LiAlO2(100) Substraten gewachsen wurde. Die heteroepitaktische Ausrichtung… (more)

Liu, Tian-Yu

2005-01-01T23:59:59.000Z

46

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect (OSTI)

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

47

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network [OSTI]

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

48

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network [OSTI]

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

49

Low threshold for optical damage in AlGaN epilayers and heterostructures  

SciTech Connect (OSTI)

Laser pulses with duration much shorter than the effective carrier lifetime cause permanent photoluminescence (PL) quenching and enhancement of PL decay rate in bare-faceted and capped AlGaN epilayers and multiple quantum wells at pulse energies about an order of magnitude lower than those causing the surface to melt and degrade. In contrast, GaN epilayers exhibit no photomodification in the same excitation intensity range. PL spectra and decay kinetics show that lattice heating is not responsible for the observed changes in AlGaN, which result from the formation of nonradiative recombination centers via recombination-enhanced defect reactions occurring at high nonequilibrium carrier densities.

Saxena, Tanuj [Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Tamulaitis, Gintautas [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio al. 9-III, Vilnius, LT-10222 (Lithuania); Shatalov, Max; Yang, Jinwei; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209 (United States); Shur, Michael S. [Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Department of PAPA, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

2013-11-28T23:59:59.000Z

50

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect (OSTI)

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

51

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect (OSTI)

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

52

Dry patterning of InGaN and InAlN  

Science Journals Connector (OSTI)

Dry etch rates of In x Ga1?x N and In x Al1?x N alloys are found to increase with In mole fraction in CH4/H2microwave (2.45 GHz) discharges and to decrease under the same conditions in Cl2/H2 mixtures. Both plasma chemistries produce smooth anisotropicetching across the entire composition range from InN to either GaN or AlN. Addition of SF6 rather than H2 to a Cl2discharge produces faster etch rates and retains smooth morphologies. This suggests that either atomic hydrogen or fluorine is capable of effective removal of N from the III?V nitride materials. Ar+ ion milling rates for InGaAlN alloys are found to be approximately a factor of 2 lower than for more conventional III?V semiconductors like GaAs.

S. J. Pearton; C. R. Abernathy; F. Ren

1994-01-01T23:59:59.000Z

53

Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs,  

E-Print Network [OSTI]

Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs Evgueni A. Chagarov *, Andrew oxides Ge InGaAs InAlAs Oxide­semiconductor stack High-K oxide a b s t r a c t The structural properties

Kummel, Andrew C.

54

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P  

E-Print Network [OSTI]

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P An Chen1,a-bandgap semiconductor AlxGa1-xP is a promising material candidate for low-noise photodiodes in blue/UV spectrum. Photodiodes were fabricated on Al0.5Ga0.5P epitaxial layer grown lattice matched on GaP substrate by molecular

Woodall, Jerry M.

55

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

0.00-1.99 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1996 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1996 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: In 1996, consumption of natural gas for agricultural use

56

Doping and isolation of GaN, InGaN and InAlN using ion implantation  

SciTech Connect (OSTI)

Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after subsequent annealing in the range 600-700{degrees}C. Smaller increases in sheet resistance are observed for In{sub x}Ga{sup 1-x}N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.

Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States)] [and others

1995-08-01T23:59:59.000Z

57

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

58

Invited Paper AlGaN-based high-performance metalsemiconductormetal  

E-Print Network [OSTI]

combustion monitor- ing, furnace monitoring and missile warning; secure non-line-of-sight and space photodetector was demonstrated by Khan et al. [11] in 1993. Shortly after, the first AlGaN based solar that they are not responsive to the background radiation from the sun, since the solar radiation within their spectral band (l

Ozbay, Ekmel

59

Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN  

SciTech Connect (OSTI)

Double heterostructures of strained GaN quantum wells (QWs) sandwiched between relaxed AlN layers provide a platform to investigate the quantum-confined electronic and optical properties of the wells. The growth of AlN/GaN/AlN heterostructures with varying GaN quantum well thicknesses on AlN by plasma molecular beam epitaxy (MBE) is reported. Photoluminescence spectra provide the optical signature of the thin GaN QWs. Reciprocal space mapping in X-ray diffraction shows that a GaN layer as thick as ?28 nm is compressively strained to the AlN layer underneath. The density of the polarization-induced two-dimensional electron gas (2DEG) in the undoped heterostructures increases with the GaN QW thickness, reaching ?2.5?×?10{sup 13}/cm{sup 2}. This provides a way to tune the 2DEG channel density without changing the thickness of the top barrier layer. Electron mobilities less than ?400 cm{sup 2}/Vs are observed, leaving ample room for improvement. Nevertheless, owing to the high 2DEG density, strained GaN QW field-effect transistors with MBE regrown ohmic contacts exhibit an on-current density ?1.4?A/mm, a transconductance ?280 mS/mm, and a cut off frequency f{sub T}?104?GHz for a 100-nm-gate-length device. These observations indicate high potential for high-speed radio frequency and high voltage applications that stand to benefit from the extreme-bandgap and high thermal conductivity of AlN.

Li, Guowang; Song, Bo; Ganguly, Satyaki; Zhu, Mingda; Wang, Ronghua; Yan, Xiaodong; Verma, Jai; Protasenko, Vladimir; Grace Xing, Huili; Jena, Debdeep, E-mail: djena@nd.edu [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2014-05-12T23:59:59.000Z

60

Carrier lifetime reduction in 1.5 m AlGaAsSb saturable absorbers with air and AlAsSb barriers  

E-Print Network [OSTI]

The SESAM structures consist of a 60-period InGaAsP/InP distributed Bragg reflector DBR and a 7-nm-thick Al exponential carrier decay time of 20 ps can be achieved. The studied AlGaAsSb absorbers were deposited on InGaAsP depth, the saturation fluence, the inverse absorption, the nonsaturable absorption, and the carrier de

Keller, Ursula

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Vertical cavity surface emitting laser emitting at 1.56 microns with AlGaAsSb/AlAsSb distributed Bragg reflectors  

SciTech Connect (OSTI)

The authors report 77K operation of an optically pumped vertical cavity surface emitting laser with an Sb-based cavity. The structure consists of 15 and 20 pair AlGaAsSb/AlAsSb top and bottom reflectors and a bulk InGaAs active region.

Blum, O.; Klem, J.F.; Lear, K.L.; Vawter, G.A.; Kurtz, S.R.

1998-07-01T23:59:59.000Z

62

THz laser based on quasi-periodic AlGaAs superlattices  

SciTech Connect (OSTI)

The use of quasi-periodic AlGaAs superlattices as an active element of a quantum cascade laser of terahertz range is proposed and theoretically investigated. A multi-colour emission, having from three to six peaks of optical gain, is found in Fibonacci, Thue-Morse, and figurate superlattices in electric fields of intensity F = 11 - 13 kV cm{sup -1} in the frequency range f = 2 - 4 THz. The peaks depend linearly on the electric field, retain the height of 20 cm{sup -1}, and strongly depend on the thickness of the AlGaAs-layers. (lasers)

Malyshev, K V [N.E. Bauman Moscow State Technical University, Moscow (Russian Federation)

2013-06-30T23:59:59.000Z

63

Development of Polarized Electron Source of GaAs-AlGaAs Superlattice and Strained GaAs  

Science Journals Connector (OSTI)

At Nagoya University, we have continued the development of GaAs polarized electron source (PES) for several years. Our test ... a gun producing (1–5) KeV polarized electrons and a standard 100 KeV Mott polarimete...

T. Nakanishi; S. Nakamura

1991-01-01T23:59:59.000Z

64

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

65

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy  

Science Journals Connector (OSTI)

Time-resolved photoluminescence(TRPL) and positron annihilation measurements as well as Al0.23Ga0.77N/GaN heterostructuregrowth by metalorganic vapor phase epitaxy were carried out on very low defect density polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence(PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L +); i.e. decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L + being 116?nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100?K and levels off at approximately 1.1?ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al0.23Ga0.77N/GaN/Al0.18Ga0.82N/GaN heterostructure are improved by the use of FS-GaN substrates in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Al0.23Ga0.77N/GaN single heterostructuregrown on the c-plane FS-GaN substrate.

S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono

2012-01-01T23:59:59.000Z

66

Spectral research on an AlGaAs epitaxial material for a terahertz quantum-cascade laser  

Science Journals Connector (OSTI)

The spectral properties of a series of AlGaAs epitaxial films were studied by using a Fourier transform infrared spectrometer with an 80-degree grazing incidence reflection unit. The AlAs-like transversal optical...

Zhi-Yong Tan; Jun-Cheng Cao

2012-04-01T23:59:59.000Z

67

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS  

E-Print Network [OSTI]

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS Robyn C. Law 1 1 Spectrolab, Inc., A Boeing Company, Sylmar, California 91342, USA 2 California Institute of Technology, Pasadena, California 91125, USA ABSTRACT Spectrolab has demonstrated the first lattice matched In

Atwater, Harry

68

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics  

Science Journals Connector (OSTI)

An n++-GaAs/p++-AlGaAs tunnel junction with a peak current density of 10?100 A cm?2 is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10?000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500 A cm?2 and a voltage drop at 10?000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations.

I García; I Rey-Stolle; C Algora

2012-01-01T23:59:59.000Z

69

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer  

SciTech Connect (OSTI)

The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

Vajargah, S. Hosseini; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada) [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)] [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Preston, J. S.; Kleiman, R. N. [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada) [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2013-09-21T23:59:59.000Z

70

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network [OSTI]

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

71

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors  

SciTech Connect (OSTI)

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-03-10T23:59:59.000Z

72

Characterization of interface states in Al{sub 2}O{sub 3}/AlGaN/GaN structures for improved performance of high-electron-mobility transistors  

SciTech Connect (OSTI)

We have investigated the relationship between improved electrical properties of Al{sub 2}O{sub 3}/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) and electronic state densities at the Al{sub 2}O{sub 3}/AlGaN interface evaluated from the same structures as the MOS-HEMTs. To evaluate Al{sub 2}O{sub 3}/AlGaN interface state densities of the MOS-HEMTs, two types of capacitance-voltage (C-V) measurement techniques were employed: the photo-assisted C-V measurement for the near-midgap states and the frequency dependent C-V characteristics for the states near the conduction-band edge. To reduce the interface states, an N{sub 2}O-radical treatment was applied to the AlGaN surface just prior to the deposition of the Al{sub 2}O{sub 3} insulator. As compared to the sample without the treatment, the N{sub 2}O-radical treated Al{sub 2}O{sub 3}/AlGaN/GaN structure showed smaller frequency dispersion of the C-V curves in the positive gate bias range. The state densities at the Al{sub 2}O{sub 3}/AlGaN interface were estimated to be 1?×?10{sup 12}?cm{sup ?2}?eV{sup ?1} or less around the midgap and 8?×?10{sup 12}?cm{sup ?2}?eV{sup ?1} near the conduction-band edge. In addition, we observed higher maximum drain current at the positive gate bias and suppressed threshold voltage instability under the negative gate bias stress even at 150?°C. Results presented in this paper indicated that the N{sub 2}O-radical treatment is effective both in reducing the interface states and improving the electrical properties of the Al{sub 2}O{sub 3}/AlGaN/GaN MOS-HEMTs.

Hori, Y.; Yatabe, Z. [Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13 West 8, Sapporo, 060-8628 Hokkaido (Japan); Hashizume, T., E-mail: hashi@rciqe.hokudai.ac.jp [Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13 West 8, Sapporo, 060-8628 Hokkaido (Japan); Japan Science and Technology Agency (JST), CREST, Tokyo 102-0075 (Japan)

2013-12-28T23:59:59.000Z

73

Dislocation-induced fields in piezoelectric AlGaN/GaN bimaterial heterostructures  

E-Print Network [OSTI]

and energy conversion abil- ity between mechanical and electric fields, providing opportuni- ties-implanted AlN J. Appl. Phys. 112, 073525 (2012) Minimum energy structures of faceted, incoherent interfaces J. Appl. Phys. 112, 073501 (2012) Defect specific photoconductance: Carrier recombination through surface

Pan, Ernie

74

Energy levels of very short?period (GaAs) n ?(AlAs) n superlattices  

Science Journals Connector (OSTI)

The energy levels of very short?period (GaAs) n ?(AlAs) n superlattices (n?4) were investigated by photoluminescence(PL). The results show that these superlattices are type II but the lowest conduction bands are X x y for n?3 and X z for n=4 respectively. (Here X z is the valley with k parallel to the growth axis.) In both cases the X valleys are very close to each other. PL decay PL excitation and PL under uniaxial stress confirm this identification. Al0.5Ga0.5As shows very different behavior showing that even for n=1 our samples are true superlattices.

Weikun Ge; M. D. Sturge; W. D. Schmidt; L. N. Pfeiffer; K. W. West

1990-01-01T23:59:59.000Z

75

Journal of Crystal Growth 293 (2006) 273277 A study of semi-insulating GaN grown on AlN buffer/sapphire  

E-Print Network [OSTI]

-temperature GaN interlayer. In comparison with the normal GaN grown on sapphire, the crystal quality measurement results of GaN grown directly on an AlN buffer indicated that the as-grown-undoped Ga, or high density of edge-type dislocations [6­10]. However, Fe and other heavy metals tend to have reactor

Ozbay, Ekmel

76

In situ chemical sensing in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time  

E-Print Network [OSTI]

; accepted 14 June 2005; published 18 July 2005 Gallium nitride and its alloys promise to be key materials.1116/1.1993616 I. INTRODUCTION In recent years, gallium-nitride GaN - and aluminum- gallium-nitride AlGaN -based are grown at high temperatures e.g., up to 1100 °C using large concentrations of H2 carrier and NH3 N source

Rubloff, Gary W.

77

Composition dependent valence band order in c-oriented wurtzite AlGaN layers  

SciTech Connect (OSTI)

The valence band order of polar wurtzite aluminum gallium nitride (AlGaN) layers is analyzed for a dense series of samples, grown heteroepitaxially on sapphire substrates, covering the complete composition range. The excitonic transition energies, found by temperature dependent photoluminescence (PL) spectroscopy, were corrected to the unstrained state using input from X-ray diffraction. k?p theory yields a critical relative aluminum concentration x{sub c}=(0.09±0.05) for the crossing of the uppermost two valence bands for strain free material, shifting to higher values for compressively strained samples, as supported by polarization dependent PL. The analysis of the strain dependent valence band crossing reconciles the findings of other research groups, where sample strain was neglected. We found a bowing for the energy band gap to the valence band with ?{sub 9} symmetry of b{sub ?{sub 9}}=0.85eV, and propose a possible bowing for the crystal field energy of b{sub cf}=?0.12eV. A comparison of the light extraction efficiency perpendicular and parallel to the c axis of Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N quantum well structures is discussed for different compositions.

Neuschl, B., E-mail: benjamin.neuschl@uni-ulm.de; Helbing, J.; Knab, M.; Lauer, H.; Madel, M.; Thonke, K. [Institute of Quantum Matter / Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm (Germany); Meisch, T.; Forghani, K.; Scholz, F. [Institute of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm (Germany); Feneberg, M. [Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg (Germany)

2014-09-21T23:59:59.000Z

78

Magnetotransport studies of AlGaN/GaN heterostructures with two-dimensional electron gas in parallel with a three-dimensional Al-graded layer: Incorrect hole type determination  

Science Journals Connector (OSTI)

We report magnetotransport measurements performed on AlGaN/GaN devices with different buffer layers. Standard samples with a 1??m thick GaN buffer show a linear Hall resistance and an almost constant magnetoresistance as expected from a single two-dimensional electron gas (2DEG) at the AlGaN/GaN interface. Other samples with an Al x Ga1– x N buffer (x?=?5%) and a buried linear aluminium gradient have an additional three-dimensional electron slab (3DES) close to the GaN substrate. In this case the Hall resistance is strongly non-linear and presents an incorrect hole-type carrier signature evidenced by low field mobility spectrum analysis. This effect is strengthened when the 3D layer parallel to the mesa-etched 2DEG is infinite. We suggest that the misplacement of the electrical contacts in the 3DES i.e. far from the sample edges could explain the wrong carrier type determination.

L. Konczewicz

2013-01-01T23:59:59.000Z

79

Cryogenic growth of Al nitride on GaAs(110): X-ray-photoemission spectroscopy and inverse-photoemission spectroscopy  

Science Journals Connector (OSTI)

We report on our recent studies of Al nitride growth on GaAs(110) formed by depositing Al onto a condensed ammonia overlayer on GaAs(110) at T=90 K using x-ray-photoemission spectroscopy and inverse-photoemission spectroscopy. We have also investigated the temperature dependence of the interface thus formed. The results show some limited amount of Al nitride formed at T=90 K even though the reaction is slow, but the overlayer mostly remains metallic until the substrate is heated up. Much of the reaction of Al with ammonia occurs at about T=170 K, above which the overlayer becomes insulating. The combined information from occupied and unoccupied states reveals new features of the interface formation, and is consistent with our previous synchrotron photoemission studies of Al/NH3/GaAs(100).

Ken T. Park and Y. Gao

1993-02-15T23:59:59.000Z

80

Determination of gain in AlGaN cladding free nitride laser diodes  

SciTech Connect (OSTI)

The optical gain spectra of InGaN-based multiple-quantum-well (MQW) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy are compared for different emission wavelengths. Two AlGaN cladding free LDs with similar epitaxial structures but with different In compositions in MQW were grown to study the dependence of material gain on lasing wavelength. As the emission wavelength increased from 432 to 458 nm, the differential modal gain decreased from 5.7 to 4.7 cm/kA, and the optical losses increased from 40 to 46 cm{sup ?1} resulting in an increase in threshold current density. This dependence is attributed to lower optical mode confinement of LD emitting at longer wavelength. We found a strong decrease of confinement factor with increasing wavelength.

Muziol, G.; Turski, H.; Wolny, P. [Institute of High Pressure Physics, Sokolowska 29/37, 01-142 Warsaw (Poland)] [Institute of High Pressure Physics, Sokolowska 29/37, 01-142 Warsaw (Poland); Siekacz, M.; Sawicka, M.; Perlin, P.; Skierbiszewski, C. [Institute of High Pressure Physics, Sokolowska 29/37, 01-142 Warsaw (Poland) [Institute of High Pressure Physics, Sokolowska 29/37, 01-142 Warsaw (Poland); TopGaN Ltd, ul Soko?owska 29/37, 01-142 Warszawa (Poland)

2013-08-05T23:59:59.000Z

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Journal of Crystal Growth 195 (1998) 309--313 Structural and optical properties of AlInN and AlGaInN  

E-Print Network [OSTI]

and cladding layers in quantum well (QW) laser diode (LD) structures, respectively [1--3]. In contrast, little- ful: Al In N can be lattice-matched to GaN; consequently, Al \\V In V N can be used as a cladding

Wetzel, Christian M.

82

Jasmine R. Scott1, Nathan Tarlyn2, Amit Dhingra2 and Kate Evans2 1Fort Valley State University, GA and 2Department of Horticulture, Washington State University, WA  

E-Print Network [OSTI]

and 2Department of Horticulture, Washington State University, WA Time travel with apples: Can you see on selection media in the dark. After a week, cultures were moved to the light to induce shoot development

Collins, Gary S.

83

Influence of composition and heat treatment on damping and magnetostrictive properties of Fe-18%(Ga+Al) alloys  

SciTech Connect (OSTI)

The structure, magnetostriction and damping properties of Fe82Ga(18?x)Alx(x = 0, 5, 8, 12) alloys were analyzed. The anelastic response of Fe–18(Ga + Al) alloys was studied as a function of temperature (from 0 to 600 ?C), frequency (from 0.01 to 200 Hz) and amplitude (from 0.0004% to 0.2%) of forced vibrations. The origin of the relatively high damping capacity of Fe–Ga–Al alloy at room temperature was determined by applying a magnetic field and different heat treatment regimes. The substitution of Ga by Al in Fe–18% Ga alloys was found to decrease magnetostriction and damping. The heat treatment of alloys influences the damping capacity of alloys more than variations of their chemical compositions. Thermally activated frequency and temperature-dependent anelastic effects in Fe– Ga–Al alloys were analyzed and the corresponding activation parameters for relaxation processes were evaluated. Internal friction effects caused by structural transformations were recorded and were found to be consistent with the A2 ! D03! L12reaction. The physical mechanisms for all anelastic effects are discussed

Golovin, I S [National University of Science and Technology MISIS; Palacheva, V V [National University of Science and Technology MISIS; Zadorozhnyy, V Yu [National University of Science and Technology MISIS; Zhu, J [University of Science and Technology Beijing; Jiang, H [University of Science and Technology Beijing; Cifre, J [Universitat de les Illes Balears; Lograsso, Thomas A [Ames Laboratory

2014-10-01T23:59:59.000Z

84

Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers  

E-Print Network [OSTI]

of high Al-content AlGaN quantum well lasers Jing Zhang, Hongping Zhao, and Nelson Tansu Citation: Appl of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content Al characteristics of high Al-content AlGaN quantum wells QWs are analyzed for deep UV lasers. The effect of crystal

Gilchrist, James F.

85

Growth and electrical characterization of Al{sub 0.24}Ga{sub 0.76}As/Al{sub x}Ga{sub 1-x}As/Al{sub 0.24}Ga{sub 0.76}As modulation-doped quantum wells with extremely low x  

SciTech Connect (OSTI)

We report on the growth and electrical characterization of modulation-doped Al{sub 0.24}Ga{sub 0.76}As/Al{sub x}Ga{sub 1-x}As/Al{sub 0.24}Ga{sub 0.76}As quantum wells with mole fractions as low as x = 0.00057. Such structures will permit detailed studies of the impact of alloy disorder in the fractional quantum Hall regime. At zero magnetic field, we extract an alloy scattering rate of 24 ns{sup -1} per%Al. Additionally, we find that for x as low as 0.00057 in the quantum well, alloy scattering becomes the dominant mobility-limiting scattering mechanism in ultra-high purity two-dimensional electron gases typically used to study the fragile {nu} = 5/2 and {nu} = 12/5 fractional quantum Hall states.

Gardner, Geoffrey C. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Watson, John D.; Mondal, Sumit [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); Deng, Nianpei; Csathy, Gabor A. [Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States)] [Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2013-06-24T23:59:59.000Z

86

First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures  

E-Print Network [OSTI]

We propose a new method to calculate polarization induced interfacial charges in semiconductor heterostructures using classical electrostatics applied to real-space band diagrams from first principles calculations and apply it to GaN/AlN heterostructures with ultrathin AlN layers (4-6 monolayers). We show that the calculated electric fields and interfacial charges are independent of the exchange-correlation functionals used (local-density approximation and hybrid functionals). We also find the calculated interfacial charge of (6.8 +/- 0.4) x 10^13 cm-2 to be in excellent agreement with experiments and the value of 6.58 x 10^13 cm-2 calculated from bulk polarization constants, validating the use of bulk constants even for very thin films.

Rohan Mishra; Oscar D. Restrepo; Siddharth Rajan; Wolfgang Windl

2011-05-17T23:59:59.000Z

87

Surface roughening during depth profiling by Secondary Ion Mass Spectrometry (SIMS) in GaAlAs and GaAs  

Science Journals Connector (OSTI)

During bombardment of Ga1?xAlxAs and GaAs with oxygen we found an abrupt transition to higher sputter rates, change of the useful yield and significant increase of surface roughness at a well defined depth, which...

M. Gericke; T. Lill; M. Trapp; C. -E. Richter…

88

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm GaN-on-Si...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

89

Mid-infrared pump-related electric-field domains in GaAs/(Al,Ga)As quantum-cascade structures for terahertz lasing without population inversion  

SciTech Connect (OSTI)

We investigate the effect of mid-infrared (MIR) pumping on the transport properties of GaAs/(Al,Ga)As terahertz (THz) quantum lasers (TQLs), which rely on quantum coherence effects of intersubband transitions. Aiming at THz lasing at elevated temperatures, we extend the concept of THz gain with and without population inversion of a single, MIR-pumped, electrically driven THz stage proposed by Waldmueller et al.[Phys. Rev. Lett. 99, 117401 (2007)] to an entire TQL. However, experiments using a CO{sub 2} as well as a free-electron laser and numerical simulations show that this resonant MIR pumping causes a negative differential conductivity (NDC) in addition to the NDC caused by sequential tunneling. Lasing of these TQLs is prevented by the formation of electric-field domains below the resonance field strength for gain of each single THz stage.

Giehler, M.; Wienold, M.; Schrottke, L.; Hey, R.; Grahn, H. T. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Pavlov, S. G. [Deutsches Zentrum fuer Luft- und Raumfahrt, Rutherfordstr. 2, 12489 Berlin (Germany); Huebers, H.-W. [Deutsches Zentrum fuer Luft- und Raumfahrt, Rutherfordstr. 2, 12489 Berlin (Germany); Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Winnerl, S.; Schneider, H. [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden (Germany)

2011-11-15T23:59:59.000Z

90

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and  

E-Print Network [OSTI]

InN material lattice-matched to GaN will also be useful as cladding layer in laser structure. Specifically, Al) for solid state light- ing [1­19], visible diode lasers for both display and biosensing [20GaN and AlGaN in III-nitride based applications for LEDs [40­42] and laser diode (LD) [20­26], solar

Gilchrist, James F.

91

Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors S. L. Rumyantsev,a)  

E-Print Network [OSTI]

as the carrier gas. The n -Al0.4Ga0.6N layer was codoped using disilane (Si2H4) and TMI. As confirmed n -Al0.4Ga0.6N active layer grown with the disilane flux reduced by a factor of 10. The C

Pala, Nezih

92

Catalyst performance of novel Pt/Mg(Ga)(Al)O catalysts for alkane dehydrogenation Georges Siddiqi, Pingping Sun, Vladimir Galvita, Alexis T. Bell *  

E-Print Network [OSTI]

Catalyst performance of novel Pt/Mg(Ga)(Al)O catalysts for alkane dehydrogenation Georges Siddiqi dehydrogenation Pt Hydrotalcite a b s t r a c t The dehydrogenation of ethane and propane using a Pt catalyst supported on a novel Mg(Ga)(Al)O mixed oxide support was investigated. Catalyst performance is strongly

Bell, Alexis

93

Transport mechanism of ?- and X-band electrons in AlxGa1-xAs/AlAs/GaAs double-barrier quantum-well infrared photodetectors  

Science Journals Connector (OSTI)

The effect of the ?- and X-band electrons in the Al0.25Ga0.75As/AlAs/GaAs double-barrier quantum well (DBQW) is investigated by a microscopic empirical pseudopotential calculation. The DBQW structure used in the calculation is designed as a 3–5-?m quantum-well infrared photodetector with an associated transition energy of 313 meV. DBQW tunneling transmission via ?- and X-like states as a function of electron energy and applied voltage are described and compared to that in a single-barrier AlAs/GaAs quantum well. The dark current is simulated by the confined ground-state electron tunneling out of the well. We find that, at high-bias voltage, tunneling via X-like states increases the current by a few orders of magnitude. We have also varied the additional barrier thickness and found that for a very thin (<20 Å) additional barrier DBQW, the excited-state electrons are not blocked by the ?-band barrier, and may give a high photocurrent without the assistance of the X band, although the dark current also increases. © 1996 The American Physical Society.

T. Osotchan; V. W. L. Chin; T. L. Tansley

1996-07-15T23:59:59.000Z

94

Synthesis of Nb/sub 3/Ga and Nb/sub 3/Al superconducting composites by laser beam irradiation  

SciTech Connect (OSTI)

Nb/sub 3/Ga and Nb/sub 3/Al superconductors were successfully fabricated by continuous CO/sub 2/ laser beam irradiation of a moving material. Transition temperatures after the irradiation are 17.0 and 16.5 K, respectively. These temperatures are increased by approx.2 K by the subsequent annealings. Critical current density J/sub c/ (for the reacted area) of 3 x 10/sup 4/ A/cm/sup 2/ at 15 T and 4.2 K is obtained for Nb/sub 3/Al tape with small magnetic field dependence up to 23 T. The results indicate that the continuous laser beam irradiation is a very attractive method for fabricating advanced superconductors, such as Nb/sub 3/Ga, Nb/sub 3/Al, Nb/sub 3/(Al,Ge), etc.

Kumakura, H.; Togano, K.; Tachikawa, K.; Yamada, Y.; Murase, S.; Nakamura, E.; Sasaki, M.

1986-03-03T23:59:59.000Z

95

Investigation of interface intermixing and roughening in low-temperature-grown AlAs/GaAs multiple quantum wells  

E-Print Network [OSTI]

Investigation of interface intermixing and roughening in low-temperature-grown AlAs/GaAs multiple to the standard-temperature-grown MQW. However, significant interface roughening and intermixing occurs- neal ambients14 have effects on interface roughening or in- termixing. In all cases, enhanced diffusion

Woodall, Jerry M.

96

A Millimeter-wave Harmonic Optoelectronic Mixer based on InAlAs/InGaAs Metamorphic HEMT  

E-Print Network [OSTI]

A Millimeter-wave Harmonic Optoelectronic Mixer based on InAlAs/InGaAs Metamorphic HEMT ChangAs substrate as a harmonic optoelectronic mixer. The fabricated metamorphic HEMT simultaneously performs photodetection at 1.55µµµµm lightwave and harmonic optoelectronic up-conversion into millimeter-wave band

Choi, Woo-Young

97

Vacancy diffusion kinetics in arsenic-rich nonstoichiometric AlAsGaAs heterostructures S. Balasubramanian and S. W. Mansour  

E-Print Network [OSTI]

Vacancy diffusion kinetics in arsenic-rich nonstoichiometric AlAsÃ?GaAs heterostructures S. The intermixing is attributed to a supersaturated concentration of group-III vacancies and is enhanced by several temperatures. In this paper we establish that the decay of the excess vacancy concentration satisfies second

Nolte, David D.

98

Direct measurements of large near-band edge nonlinear index change from 1.48 to 1.55 m in InGaAsInAlGaAs multiquantum wells  

E-Print Network [OSTI]

used to measure di- rectly the nonlinear index change in bulk InGaAsP.10 Com- parison of DFWM results measurements of nonlinear refractive index change and nonlinear absorption in In0.530Al0.141Ga0.329As/In0.530Ga . The index-change-over-absorption figure of merit, F, is greater than unity over much of the spectrum

99

Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices  

E-Print Network [OSTI]

of thermoelectric energy conversion devices depends on the thermoelectric figure of merit ZT of a material, which- troduced charge carriers in the ErAs:InGaAs regions of 0, 2 1018 , 4 1018 , and 8 1018 cm-3 , respectively. There- fore, the effective carrier concentrations in the four samples were 2 1018 , 4 1018 , 6 1018

100

Narrow spectral linewidth of single zinc-blende GaN/AlN self-assembled quantum dots  

SciTech Connect (OSTI)

We study by microphotoluminescence the optical properties of single self-assembled zinc-blende GaN/AlN quantum dots grown by plasma-assisted molecular beam epitaxy. As opposed to previous reports, the high quality of such zinc-blende GaN quantum dots allows us to evidence a weak acoustic phonon sideband as well as a limited spectral diffusion. As a result, we report on resolution-limited quantum dot linewidths as narrow as 500 ± 50 ?eV. We finally confirm the fast radiative lifetime and high-temperature operation of such quantum dots.

Sergent, S. [Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)] [Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Kako, S. [Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)] [Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Bürger, M.; As, D. J. [Department Physik, Universität Paderborn, Warburger Str. 100, 33098 Paderborn (Germany)] [Department Physik, Universität Paderborn, Warburger Str. 100, 33098 Paderborn (Germany); Arakawa, Y. [Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan) [Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)

2013-10-07T23:59:59.000Z

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Category:Seattle, WA | Open Energy Information  

Open Energy Info (EERE)

Seattle, WA Seattle, WA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Seattle, WA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Seattle WA Puget Sound Energy Inc.png SVFullServiceRestauran... 60 KB SVHospital Seattle WA Puget Sound Energy Inc.png SVHospital Seattle WA ... 58 KB SVLargeHotel Seattle WA Puget Sound Energy Inc.png SVLargeHotel Seattle W... 57 KB SVLargeOffice Seattle WA Puget Sound Energy Inc.png SVLargeOffice Seattle ... 57 KB SVMediumOffice Seattle WA Puget Sound Energy Inc.png SVMediumOffice Seattle... 61 KB SVMidriseApartment Seattle WA Puget Sound Energy Inc.png SVMidriseApartment Sea... 58 KB SVOutPatient Seattle WA Puget Sound Energy Inc.png SVOutPatient Seattle W... 63 KB

102

Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement  

SciTech Connect (OSTI)

Two-dimensional current collapse imaging of a Schottky gate AlGaN/GaN high electron mobility transistor device was achieved by optical electric field-induced second-harmonic generation (EFISHG) measurements. EFISHG measurements can detect the electric field produced by carriers trapped in the on-state of the device, which leads to current collapse. Immediately after (e.g., 1, 100, or 800??s) the completion of drain-stress voltage (200?V) in the off-state, the second-harmonic (SH) signals appeared within 2??m from the gate edge on the drain electrode. The SH signal intensity became weak with time, which suggests that the trapped carriers are emitted from the trap sites. The SH signal location supports the well-known virtual gate model for current collapse.

Katsuno, Takashi, E-mail: e1417@mosk.tytlabs.co.jp; Ishikawa, Tsuyoshi; Ueda, Hiroyuki; Uesugi, Tsutomu [Toyota Central R and D Laboratories Inc., Nagakute, Aichi 480-1192 (Japan); Manaka, Takaaki; Iwamoto, Mitsumasa [Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552 (Japan)

2014-06-23T23:59:59.000Z

103

Effects of built-in internal fields and Al alloy content on donor binding energy of a hydrogenic impurity in a wurtzite GaN/AlGaN quantum dot  

Science Journals Connector (OSTI)

Built-in internal field induced donor hydrogenic binding energy of an impurity in a wurtzite GaN/AlGaN quantum dot is investigated. The built-in internal electric field has the contribution from spontaneous and piezo-electric polarisation. The computations are carried out with the inclusion of conduction band non-parabolicity through the energy dependent effective mass. It is calculated with a variational approach within the framework of single band effective-mass approximation. A two-parametric trial wave function is employed in order to improve the results. The effects of quantum confinement and the strength of internal electric fields on the donor binding energy are discussed. The results show that the strength of the internal field is of the order MV/cm and it has more influence on the geometrical confinement and the composition of Al alloy content in the GaN/AlxGa1-xN quantum dot. These results are in good agreement with the other investigators.

M. Pattammal; A. John Peter

2014-01-01T23:59:59.000Z

104

Structure and zero-dimensional polariton spectrum of natural defects in GaAs/AlAs microcavities  

Science Journals Connector (OSTI)

We present a correlative study of structural and optical properties of natural defects in planar semiconductor microcavities grown by molecular beam epitaxy, which are showing a localized polariton spectrum as reported in Zajac et al. [Phys. Rev. B 85, 165309 (2012)]. The three-dimensional spatial structure of the defects was studied using combined focused ion beam (FIB) and scanning electron microscopy (SEM). We find that the defects originate from a local increase of a GaAs layer thickness. Modulation heights of up to 140 nm for oval defects and 90 nm for round defects are found, while the lateral extension is about 2 ?m for oval and 4 ?m for round defects. The GaAs thickness increase is attributed to a Ga droplet deposited during growth due to Ga cell spitting. Following the droplet deposition, the thickness modulation expands laterally while reducing its height, yielding oval to round mounds of the interfaces and the surface. With increasing growth temperature, the ellipticity of the mounds is decreasing and their size is increasing. This suggests that the expansion is related to the surface mobility of Ga, which, with increasing temperature, is increasing and reducing its anisotropy between the [110] and [11¯0] crystallographic directions. Comprehensive data consisting of surface profiles of defects measured using differential interference contrast microscopy, volume information obtained using FIB/SEM, and characterization of the resulting confined polariton spectrum are presented.

Joanna M. Zajac and Wolfgang Langbein

2012-11-01T23:59:59.000Z

105

Successes and failures of the k?p method: A direct assessment for GaAs/AlAs quantum structures  

Science Journals Connector (OSTI)

The k?p method combined with the envelope-function approximation is the tool most commonly used to predict electronic properties of semiconductor quantum wells and superlattices. We test this approach by comparing band energies, dispersion, and wave functions for GaAs/AlAs superlattices and quantum wells as computed directly from a pseudopotential band structure and using eight-band k?p. To assure equivalent inputs, all parameters needed for the k?p treatment are extracted from calculated bulk GaAs and AlAs pseudopotential band structures. Except for large exchange splittings in the in-plane dispersion for thin superlattices, present in pseudopotential calculations but absent from the k?p results, we find generally good agreement for heterostructure hole bands within ?200 meV of the GaAs valence-band maximum. There are systematic errors in band energies and dispersion for deeper hole bands (all other than hh1 and lh1) and significant qualitative and quantitative errors for the conduction bands. Errors for heterostructure conduction states which are derived from the zinc-blende ? point diminish as length scales increase beyond ?20 ML, while significant errors persist for L- and X-derived states.For bulk GaAs and AlAs, eight-band k?p bands agree well with pseudopotential results very near the zinc-blende ? point (where k?p parameters are fit) but the first GaAs X point conduction band is ?26 eV too high with respect to the pseudopotential result. We show that this inadequate description of the bulk band dispersion is the principal source of k?p errors in these heterostructures. A wave-function projection analysis shows that k?p errors for heterostructures simply reflect corresponding errors for the bulk constituents, weighted by the amount that such bulk states participate in heterostructure states. © 1996 The American Physical Society.

D. M. Wood and Alex Zunger

1996-03-15T23:59:59.000Z

106

High photo-excited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode  

E-Print Network [OSTI]

We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77K. The detection structure is based on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QD-RTD). A photon rate of 115 photons per second had induced 10nA photocurrent in this structure, corresponding to the photo-excited carrier multiplication factor of 10^7. This high multiplication factor is achieved by the quantum dot induced memory effect and the resonant tunneling tuning effect of QD-RTD structure.

Wangping Wang; Ying Hou; Dayuan Xiong; Ning Li; Wei Lu

2007-10-15T23:59:59.000Z

107

High?quality focused?ion?beam?made mirrors for InGaP/InGaAlP visible?laser diodes  

Science Journals Connector (OSTI)

We employed a focused ion beam(FIB) to sputter the end mirrors on InGaP/InGaAlP laser diodes. This particular diode operates at a wavelength of about 670 nm. For this wavelength the quality of the sputteredmirrors is far more critical than for longer wavelength devices. The present lasers do in fact show a relatively large increase in their threshold current after FIBmicromachining. In this article we investigate the origins of this increase and how to prevent it. After optimization the lasers with a FIB?made end mirror have a threshold current comparable to that of cleaved?facet devices. We have seen that the polycrystalline structure of the device metallization on top of the laser diode causes roughening of the mirror during sputtering which results in severe scatter losses of the laser light. A method to decrease the surface roughness is given. A further reason for the increase in threshold current is optical absorption at the mirror presumably by a Ga?rich layer. This can be circumvented by chemical etching after FIB treatment to remove the absorbing layer. Finally to demonstrate the quality and the applicability of the FIB?made mirrors the influence of the tilt angle of the end mirror on the threshold current of the laser has been investigated. This dependency can be excellently described by theory.

M. H. F. Overwijk; J. A. de Poorter

1993-01-01T23:59:59.000Z

108

Electronic structure of Al- and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy  

SciTech Connect (OSTI)

Al- and Ga-doped sputtered ZnO films (AZO, GZO) are semiconducting and metallic, respectively, despite the same electronic valence structure of the dopants. Using hard X-ray photoelectron spectroscopy we observe that both dopants induce a band in the electronic structure near the Fermi level, accompanied by a narrowing of the Zn 3d/O 2p gap in the valence band and, in the case of GZO, a substantial shift in the Zn 3d. Ga occupies substitutional sites, whereas Al dopants are in both substitutional and interstitial sites. The latter could induce O and Zn defects, which act as acceptors explaining the semiconducting character of AZO and the lack of variation in the optical gap. By contrast, mainly substitutional doping is consistent with the metallic-like behavior of GZO.

Gabás, M.; Ramos Barrado, José R. [Lab. de Materiales and Superficies, Dpto. de Física Aplicada I, Universidad de Málaga, 29071 Málaga (Spain); Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14 km 163.5, Basovizza, I-34149 Trieste (Italy); Barrett, N. T. [CEA, DSM/IRAMIS/SPCSI, F-91191 Gif-sur-Yvette Cedex (France); Sacchi, M. [Synchrotron SOLEIL, BP 48, 91192 Gif-sur-Yvette, France and Institut des NanoSciences de Paris, UPMC Paris 06, CNRS UMR 7588, 4 Place Jussieu, 75005 Paris (France)

2014-01-01T23:59:59.000Z

109

Cl{sub 2}-based dry etching of the AlGaInN system in inductively coupled plasmas  

SciTech Connect (OSTI)

Cl{sub 2}-based Inductively Coupled Plasmas with low additional dc self- biases(-100V) produce convenient etch rates(500-1500 A /min) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas(Ar, N{sub 2}, H{sub 2}), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl{sub 2} in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Cho, Hyun; Vartuli, C.B.; Abernathy, C.R.; Donovan, S.M.; Pearton, S.J. [Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering; Shul, R.J.; Han, J. [Sandia National Labs., NM (United States)

1997-12-01T23:59:59.000Z

110

Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl{sub 3} pretreatment in Cl{sub 2}/Ar plasma chemistry  

SciTech Connect (OSTI)

Inductively coupled plasma (ICP)–reactive ion etching (RIE) patterning is a standard processing step for UV and optical photonic devices based on III-nitride materials. There is little research on ICP-RIE of high Al-content AlGaN alloys and for nonpolar nitride orientations. The authors present a comprehensive study of the ICP-RIE of c- and a-plane AlGaN in Cl{sub 2}/Ar plasma over the entire Al composition range. The authors find that the etch rate decreases in general with increasing Al content, with different behavior for c- and a-plane AlGaN. They also study the effect of BCl{sub 3} deoxidizing plasma pretreatment. An ICP deoxidizing BCl{sub 3} plasma with the addition of argon is more efficient in removal of surface oxides from Al{sub x}Ga{sub 1?x}N than RIE alone. These experiments show that Al{sub x}Ga{sub 1?x}N etching is affected by the higher binding energy of AlN and the higher affinity of oxygen to aluminum compared to gallium, with oxides on a-plane AlGaN more difficult to etch as compared to oxides on c-plane AlGaN, specifically for high Al composition materials. The authors achieve reasonably high etch rate (?350 nm/min) for high Al-content materials with a smooth surface morphology at a low DC bias of ??45 VDC.

Shah, Amit P.; Laskar, Masihhur R.; Azizur Rahman, A.; Gokhale, Maheshwar R.; Bhattacharya, Arnab [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005 (India)] [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005 (India)

2013-11-15T23:59:59.000Z

111

Nanocomposites of Semimetallic ErAs Nanoparticles Epitaxially Embedded within InGaAlAs-based Semiconductors for Thermoelectric Materials  

E-Print Network [OSTI]

GaAlAs-based Semiconductors for Thermoelectric Materials J.M.O. Zide', G. Zeng2, J.H. Bahk2, W. Kim3, S. L. Singer3, D array based on these materials for thermoelectric power generation; a power density > 1 W/cm2 is demonstrated with a temperature gradient of 120°C. Solid-state thermionics Efficient thermoelectric materials

112

Wafer-scale surface roughening for enhanced light extraction of high power AlGaInP-based light-emitting diodes  

Science Journals Connector (OSTI)

A new approach to surface roughening was established and optimized in this paper for enhancing the light extraction of high power AlGaInP-based LEDs, by combining ultraviolet (UV)...

Park, Hyeong-Ho; Zhang, Xin; Cho, Yunae; Kim, Dong-Wook; Kim, Joondong; Lee, Keun Woo; Choi, Jehyuk; Lee, Hee Kwan; Jung, Sang Hyun; Her, Eun Jin; Kim, Chang Hwan; Moon, A-Young; Shin, Chan-Soo; Shin, Hyun-Beom; Sung, Ho Kun; Park, Kyung Ho; Park, Hyung-Ho; Kim, Hi-Jung; Kang, Ho Kwan

2014-01-01T23:59:59.000Z

113

WA_1993_040_REGENTS_OF_THE_UNIVERSITY_OF_CALIFORNIA_Waiver_o...  

Broader source: Energy.gov (indexed) [DOE]

WA1993040REGENTSOFTHEUNIVERSITYOFCALIFORNIAWaivero.pdf WA1993040REGENTSOFTHEUNIVERSITYOFCALIFORNIAWaivero.pdf WA1993040REGENTSOFTHEUNIVERSITYOFCALIFORNI...

114

WA_00_030_ASE_AMERICAS_Request_to_Assign_Title_to_Waiver-Inv...  

Broader source: Energy.gov (indexed) [DOE]

WA1995019DONNELLYCORPORATIONWaiverofDomesticandFore.pdf WA1995018OPTICALCOATINGLABORATORYINCWaiverofDomesti.pdf WA03032RWESCHOTTSOLARINCWaiverof...

115

1718 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 7, JULY 2004 Solar-Blind AlGaN-Based p-i-n Photodiodes With  

E-Print Network [OSTI]

-i-n Photodiodes With Low Dark Current and High Detectivity N. Biyikli, I. Kimukin, O. Aytur, and E. Ozbay Abstract--We report solar-blind Al Ga1 N-based heterojunc- tion p-i-n photodiodes with low dark current and high. Index Terms--AlGaN, dark current, detectivity, heterostruc- ture, high-performance, p-i-n photodiode

Aytür, Orhan

116

In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device based on a  

E-Print Network [OSTI]

field-plate (IFP) HEMT structure is simulated by using the two-dimensional device simulator (SILVACO and Simulation The two-dimensional device simulator used in this work was SILVACO Atlas. The structure of the Al

Yang, Kyounghoon

117

Category:Yakima, WA | Open Energy Information  

Open Energy Info (EERE)

Yakima, WA Yakima, WA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Yakima, WA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Yakima WA Puget Sound Energy Inc.png SVFullServiceRestauran... 61 KB SVHospital Yakima WA Puget Sound Energy Inc.png SVHospital Yakima WA P... 58 KB SVLargeHotel Yakima WA Puget Sound Energy Inc.png SVLargeHotel Yakima WA... 58 KB SVLargeOffice Yakima WA Puget Sound Energy Inc.png SVLargeOffice Yakima W... 58 KB SVMediumOffice Yakima WA Puget Sound Energy Inc.png SVMediumOffice Yakima ... 57 KB SVMidriseApartment Yakima WA Puget Sound Energy Inc.png SVMidriseApartment Yak... 59 KB SVOutPatient Yakima WA Puget Sound Energy Inc.png SVOutPatient Yakima WA... 63 KB SVPrimarySchool Yakima WA Puget Sound Energy Inc.png

118

Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System  

SciTech Connect (OSTI)

Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated since some of the new devices are based on a wider diversity of materials to be etched. Conventional IUE (Reactive Ion Etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. IrI this paper, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma), for the etching of ternary compound semiconductors (InGaP, AIInP, AlGaP) which are employed for electronic devices like heterojunction bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. High density plasma sources, opeiating at lower pressure, are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms, which are described in this paper, can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride since the InGaAIP system shares many of the same properties.

Abernathy, C.R.; Hobson, W.S.; Hong, J.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

1998-11-04T23:59:59.000Z

119

Surface barrier height for different Al compositions and barrier layer thicknesses in AlGaN/GaN heterostructure field effect transistors  

SciTech Connect (OSTI)

In this paper, we present a physics based analytical model for the calculation of surface barrier height for given values of barrier layer thicknesses and Al mole fractions. An explicit expression for the two dimensional electron gas density is also developed incorporating the change in polarization charges for different Al mole fractions.

Goyal, Nitin, E-mail: goyalnitin.iitr@gmail.com; Fjeldly, Tor A. [Norwegian University of Science and Technology, Trondheim (Norway); Iniguez, Benjamin [Universitat Rovira i Virgili, Tarragona (Spain)

2013-12-04T23:59:59.000Z

120

Terahertz absorption in AlGaAs films and detection using heterojunctions  

E-Print Network [OSTI]

a Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA b NDP Optronics, LLC-mail address: uperera@gsu.edu (A.G.U. Perera). 1 Also at NDP Optronics LLC. Infrared Physics & Technology 47

Perera, A. G. Unil

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Photodiode characteristics and band alignment parameters of epitaxial Al{sub 0.5}Ga{sub 0.5}P  

SciTech Connect (OSTI)

Wide-bandgap semiconductor Al{sub x}Ga{sub 1-x}P is a promising material candidate for low-noise photodiodes in blue/UV spectrum. Photodiodes were fabricated on Al{sub 0.5}Ga{sub 0.5}P epitaxial layer grown lattice matched on GaP substrate by molecular beam epitaxy. Although quantum efficiency is low for standard p-i-n photodiode due to inadvertent photon absorption in the top p-layer, it can be significantly improved by opening a recessed window in the top p-layer or by using a Schottky junction photodiode structure. Al{sub 0.5}Ga{sub 0.5}P band alignment parameters can be extrapolated from the current-voltage characteristics of Al{sub 0.5}Ga{sub 0.5}P Schottky junctions. The bandgap of Al{sub 0.5}Ga{sub 0.5}P was measured to be 2.38 eV.

Chen An [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511 (United States); Woodall, Jerry M. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2009-01-12T23:59:59.000Z

122

Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes  

SciTech Connect (OSTI)

AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 {mu}m to 4 {mu}m. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential resistance (NDR) was detected in the forward bias at 120 K. The NDR was observed for the mesa size of 2 {mu}m at 4 V with a peak-to-valley current ratio of 3.5. The measurement conditions were chosen to make NDR reproducible more than 50 times and apparent in both scan voltage directions after electrical treatment.

Boucherit, M.; Soltani, A.; Rousseau, M.; Deresmes, D.; Berthe, M.; Durand, C.; De Jaeger, J.-C. [IEMN/UMR-CNRS 8520, Universite Lille1, PRES Universite Lille Nord de France (France); Monroy, E. [Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble (France)

2011-10-31T23:59:59.000Z

123

The two-qubit controlled-phase gate based on cross-phase modulation in GaAs/AlGaAs semiconductor quantum wells  

E-Print Network [OSTI]

We present a realization of two-qubit controlled-phase gate, based on the linear and nonlinear properties of the probe and signal optical pulses in an asymmetric GaAs/AlGaAs double quantum wells. It is shown that, in the presence of cross-phase modulation, a giant cross-Kerr nonlinearity and mutually matched group velocities of the probe and signal optical pulses can be achieved while realizing the suppression of linear and self-Kerr optical absorption synchronously. These characteristics serve to exhibit an all-optical two-qubit controlled-phase gate within efficiently controllable photon-photon entanglement by semiconductor mediation. In addition, by using just polarizing beam splitters and half-wave plates, we propose a practical experimental scheme to discriminate the maximally entangled polarization state of two-qubit through distinguishing two out of the four Bell states. This proposal potentially enables the realization of solid states mediated all-optical quantum computation and information processing.

X. Q. Luo; D. L. Wang; H. Fan; W. M. Liu

2012-01-17T23:59:59.000Z

124

Variations of energies and line shapes of the electroreflectance spectra of epitaxial Al x Ga1?x As  

Science Journals Connector (OSTI)

The electrolyte electroreflectance (EER) spectra of Al x Ga1?x As have been obtained in the E 0 and E 1 regions and for Al concentrations ranging from x=0 to 0.65. From the spectra obtained under low field conditions the variations of the interband energies with Al concentrations have been established. Following Aspnes [Surf. Sci. 3 7 419 (1973)] we have made detailed analyses of the complex resonance line shapes of the experimentally observed modulated reflectance spectra. The parameters ? and E g have been calculated and these have been used to generate theoretically the spectra for comparison with experimental results. In addition we have also examined the effects of dc bias on the EER spectra. Variations of E 0 E 0+?0 E 1 and E 1+?1 have been discussed and results on the line?shape parameters have been presented.

J. M. Wrobel; L. C. Bassett; J. L. Aubel; S. Sundaram; John L. Davis; James Comas

1987-01-01T23:59:59.000Z

125

X-ray induced persistent photoconductivity in Si-doped Al0.35Ga0.65As Yeong-Ah Soha)  

E-Print Network [OSTI]

X-ray induced persistent photoconductivity in Si-doped Al0.35Ga0.65As Yeong-Ah Soha) and G. Aeppli for publication 14 August 2001 We demonstrate that x-ray irradiation can be used to induce an insulator with fluorescence. The photoconductance as a function of incident x-ray energy exhibits an edge both at the Ga

Frenkel, Anatoly

126

Difference-frequency generation in AlGaAs Bragg reflection waveguides  

E-Print Network [OSTI]

-matching (BPM) [5,6] and quasi-phase-matching [7,8]. Among these, BPM has been shown to be the most efficient with the absorption of GaAs below 870 nm in wavelength, limits the operating window of BPM devices for infrared

127

GaInAs/AlInAs quantum cascade laser design based on optimized second harmonic generation  

Science Journals Connector (OSTI)

In this work, we present an innovative procedure for the design and optimization of GaInAs/AlInAs quantum cascade laser (QCL) structures based on the use of the genetic algorithm. The purpose of the algorithm is to determine the set of design parameters that would enable the maximization of the second order nonlinear susceptibility, thus facilitating significant optical nonlinearities to take place. In our optimization model, we start from the existing design in which the active region consists of two coupled InGaAs quantum wells separated by an AlInAs barrier, and the active region levels form double resonant nonlinear cascades. Upon obtaining the optimized structure and evaluating its energies and wave functions, the output characteristics are calculated by applying the full self-consistent rate equation modeling of the electron transport in a periodic QCL structure. The results of the calculations predict a noticeable improvement of targeted properties of the optimized design, while at the same time the original design calculations show excellent agreement with experimental results. The described procedure is applicable to various active region designs and can be used for other wavelength ranges.

A Gaji?; J Radovanovi?; V Milanovi?; D Indjin; Z Ikoni?

2014-01-01T23:59:59.000Z

128

Quantitative compositional analysis and strain study of InAs quantum wires with InGaAlAs barrier layers  

SciTech Connect (OSTI)

Quantitative compositional analysis of InAs quantum wires deposited between In{sub 0.53}Ga{sub 0.37}Al{sub 0.1}As barrier layers grown on InP substrates was performed by electron energy loss spectrometry and energy dispersive x-ray spectrometry. An indium-rich region in the center of the wire, with decreasing indium concentration toward the interface with the barrier layers, was observed from indium concentration maps for individual quantum wires. 'Stripelike' contrast modulation was observed in diffraction contrast transmission electron microscope images of the In{sub 0.53}Ga{sub 0.37}Al{sub 0.1}As barrier layer immediately above the quantum wires. The contrast originated from indium compositional modulations in the upper barrier layer as confirmed by electron energy loss spectrometry and the modulation is attributed to the presence of an inhomogeneous elastic strain field generated by the buried quantum wires. These results suggest that quantitative analysis of the composition and strain distributions at very high spatial resolution provides insights necessary to further model the physical properties and to understand the growth of these nanostructures.

Cui, K. [Department of Materials Science and Engineering, McMaster University, Hamilton, ON, L8S 4L7 (Canada); Robertson, M. D. [Department of Physics, Acadia University, Wolfville, NS, B4P 2R6 (Canada); Robinson, B. J. [Center for Emerging Device Technologies, McMaster University, Hamilton, ON, L8S 4L7 (Canada); Andrei, C. M. [Brockhouse Institute for Materials Research, McMaster University, Hamilton, ON, L8S 4L7 (Canada); Thompson, D. A. [Center for Emerging Device Technologies, McMaster University, Hamilton, ON, L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, ON, L8S 4L7 (Canada); Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, ON, L8S 4L7 (Canada); Brockhouse Institute for Materials Research, McMaster University, Hamilton, ON, L8S 4L7 (Canada)

2009-05-01T23:59:59.000Z

129

Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 21011 to 21015 cm2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 21015 cm2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 21011 to 21015 cm2 exhibited minimal degradation of the saturation drain current and extrinsic trans- conductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present. VC 2011 American Vacuum Society. [DOI: 10.1116/1.3644480

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Ren, F. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2011-01-01T23:59:59.000Z

130

Electron effective mass in Al{sub 0.72}Ga{sub 0.28}N alloys determined by mid-infrared optical Hall effect  

SciTech Connect (OSTI)

The effective electron mass parameter in Si-doped Al{sub 0.72}Ga{sub 0.28}N is determined to be m{sup ?}=(0.336±0.020)?m{sub 0} from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m{sup ?}=0.232?m{sub 0} for GaN, an average effective electron mass of m{sup ?}=0.376?m{sub 0} can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E{sub 1}(TO) and one phonon mode behavior of the A{sub 1}(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.

Schöche, S., E-mail: schoeche@huskers.unl.edu; Kühne, P.; Hofmann, T.; Schubert, M. [Department of Electrical Engineering and CNFM, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0511 (United States)] [Department of Electrical Engineering and CNFM, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0511 (United States); Nilsson, D.; Kakanakova-Georgieva, A.; Janzén, E.; Darakchieva, V. [Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, 581 83 (Sweden)] [Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, 581 83 (Sweden)

2013-11-18T23:59:59.000Z

131

Critical edition of the eleventh volume of 'Iqd al-jum?n f? t?r?kh ahl al-zam?n, with particular reference to the historical fragments from the lost book of Mu?ammad b. 'Abd al-Malik al-Hamadh?n? called: 'Unw?n al-siyar f? ma??sin ahl al-Bad? wa'l ?a?ar or Al-Ma'?rif al-muta'khkhira   

E-Print Network [OSTI]

This thesis is divided into four sections. The first chapter deals with Maml?k historiography and its major characteristics, alongside an examination of the life al' Ayn?'s, who was one of the most prominent historians of the period. Special...

Al-Hajeri, Shayea Abdulhadi Saif

2007-11-28T23:59:59.000Z

132

Characterization of ultraviolet excited Br * ?radical etching of InGaAs/InAlAs material system  

Science Journals Connector (OSTI)

Dry selective photochemicaletching of InGaAs/InAlAs material system in HBr gas excited by a 172 nm excimer lamp has been characterized. The etching is thought to be due to the formation of reactive Br*?radicals which are photocreated in the gas phase and then diffused into the solid semiconductor to create volatile products. The etching is temperature sensitive with best etching results at 50–110°?C. Atomic force microscope and scanning electron microscope pictures reveal that the surface morphology at this temperature range is smooth and fine. Auger electron spectroscopy and x?ray photoelectron spectroscopy measurements show that at low temperatures the etch products are primarily salts of bromide and are in the liquid phase and thus remain at the surface and a desorption process stops further etching. At slightly elevated temperature range the creation of oxides and deposition of bromine compounds reduces the etch rate and causes the surface quality to deteriorate. Etching at higher pressure range increases the etch rate of InGaAs but results in surface quality deterioration.

Soheil Habibi; Jun Tanaka; Hideki Hattori; Masahiro Totsuka; Satoru Matsumoto

1996-01-01T23:59:59.000Z

133

Influence of confined phonon modes on the thermal behavior of AlAs/GaAs quantum cascade structures  

Science Journals Connector (OSTI)

The thermal behavior of AlAs/GaAs quantum cascade structures is used to demonstrate the existence of confined and interface optical-phonon modes. The high conduction-band offset of this material system greatly improves the confinement of the electronic states and allows the realization of electroluminescence structures, where the optical power as a function of the temperature solely depends on the change of the upper-state lifetime induced by the longitudinal-optical-phonon population. We observed that the latter is proportional to the Bose-Einstein factor, with an appropriate phonon mode energy, which does not simply correspond to that of the GaAs bulk phonon (36-meV energy). In particular we show that the agreement between theory and experiment can be substantially improved when the confined and interface modes are taken into account in our calculation. Our results are corroborated by the threshold temperature dependence of lasers, with an active region based on similar structures.

C. Becker; C. Sirtori; H. Page; A. Robertson; V. Ortiz; X. Marcadet

2002-01-30T23:59:59.000Z

134

Large area supersonic jet epitaxy of AlN, GaN, and SiC on silicon  

SciTech Connect (OSTI)

AlN, GaN, and SiC thin films were grown on 100 mm diameter Si(111) and Si(100) substrates using Supersonic Jet Epitaxy (SJE). Precursor gases were seeded in lighter mass carrier gases and free jets were formed using novel slit-jet apertures. The jet design, combined with substrate rotation, allowed for a uniform flux distribution over a large area of a 100 mm wafer at growth pressures of 1--20 mTorr. Triethylaluminum, triethylgallium, and ammonia were used for nitride growth, while disilane, acetylene, and methylsilane were used for SiC growth. The films were characterized by in situ optical reflectivity, x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry (SE).

Lauhon, L.J.; Ustin, S.A.; Ho, W. [Cornell Univ., Ithaca, NY (United States). Dept. of Physics

1997-12-31T23:59:59.000Z

135

Modulation spectroscopy of the complex photoluminescence band of Ga0.7Al0.3As:Si  

Science Journals Connector (OSTI)

The photoluminescence and reflectivity of Ga0.7Al0.3As:Si have been studied in piezomodulation, wavelength-modulation, and photomodulation spectroscopy at low temperatures. We could identify the symmetry of the zero-phonon and phonon-assisted transitions by their comparative behavior in wavelength- and piezomodulated spectroscopy. The experimental results have been interpreted in the framework of an effective-mass model of the donor wave function in multivalley semiconductors similar to that proposed by Henning, Ansems, and Roksnoer [Semicond. Sci. Technol. 3, 361 (1988)]. Within this model, a value of the hydrostatic deformation potential of the L band in this alloy is deduced: -4.99±0.07 eV.

B. Gil, M. Leroux, J. P. Contour, and C. Chaix

1991-05-15T23:59:59.000Z

136

Radio-frequency measurements of UNiX compounds (X= Al, Ga, Ge) in high magnetic fields  

SciTech Connect (OSTI)

We performed radio-frequency (RF) skin-depth measurements of antiferromagnetic UNiX compounds (X=Al, Ga, Ge) in magnetic fields up to 60 T and at temperatures between 1.4 to {approx}60 K. Magnetic fields are applied along different crystallographic directions and RF penetration-depth was measured using a tunnel-diode oscillator (TDO) circuit. The sample is coupled to the inductive element of a TDO resonant tank circuit, and the shift in the resonant frequency {Delta}f of the circuit is measured. The UNiX compounds exhibit field-induced magnetic transitions at low temperatures, and those transitions are accompanied by a drastic change in {Delta}f. The results of our skin-depth measurements were compared with previously published B-T phase diagrams for these three compounds.

Mielke, Charles H [Los Alamos National Laboratory; Mcdonald, David R [Los Alamos National Laboratory; Zapf, Vivien [Los Alamos National Laboratory; Altarawneh, Moaz M [Los Alamos National Laboratory; Lacerda, Alex H [Los Alamos National Laboratory; Adak, Sourav [Los Alamos National Laboratory; Karunakar, Kothapalli [Los Alamos National Laboratory; Nakotte, Heinrich [Los Alamos National Laboratory; Chang, S [NIST; Alsmadi, A M [HASHEMITE UNIV; Alyones, S [HASHEMIT UNIV

2009-01-01T23:59:59.000Z

137

Comparison of dipole layers, band offsets, and formation enthalpies of GaAs-AlAs(110) and (001) interfaces  

Science Journals Connector (OSTI)

We report a very careful, self-consistent, relativistic pseudopotential calculation of the interfacial dipole double-layer potential, valence-band offset, and formation enthalpy of (GaAs)3(AlAs)3(110). A comparison is made with identical calculations for the (001) superlattice with the following results [(001) in parentheses]: The interfacial dipole layer is 315 (154) meV. The formation enthalpy per twelve-atom unit cell is -21.9 (+1.7) meV. The valence-band offset is 447 (446) meV. This lends credence to the idea that the band offset is a difference of bulk quantities and that vastly different interfaces set up whatever double layer is necessary to maintain that difference.

D. M. Bylander and Leonard Kleinman

1987-11-02T23:59:59.000Z

138

Advance Patent Waiver W(A)2013-013 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

& Publications WA98023McDERMOTTTECHNOLOGYINCWaiverofDomesticandFo.pdf WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic.pdf WA96004GECORPORATERESEARCHand...

139

WA_1995_018_OPTICAL_COATING_LABORATORY_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

Publications WA1995019DONNELLYCORPORATIONWaiverofDomesticandFore.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICAL...

140

WA_04_057_CHEMICAL_RESEARCH_AND_LICENSING_CO_Waiver_of_Paten...  

Broader source: Energy.gov (indexed) [DOE]

& Publications WA04064VELOCYSINCWaiverofPatentRgithsUnderaDOECo.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04028AIRPRODUCTSANDCHEMICAL...

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

WA_98_023_McDERMOTT_TECHNOLOGY_INC_Waiver_of_Domestic_and_Fo...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

WA06013McDERMOTTTECHNOLOGYINCWaiverofPatentRightst.pdf WA00018PRAXAIRWaiveofDomesticandForeignInventionRi.pdf WA00007COMBUSTIONENGINEERINGINCW...

142

WA_02_021_H2GEN_INNOVATIONS_Waiver_of_Domestic_and_Foreign_P...  

Broader source: Energy.gov (indexed) [DOE]

WA02046QUESTAAIRTECHNOLOGIESWaiverofDomesticandFor.pdf WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA04034NUVERAFUELCELLSINCWaiver...

143

WA_04_009_ROCKWELL_SCIENTIFIC_CO_Wailve_of_Domestic_And_Fore...  

Broader source: Energy.gov (indexed) [DOE]

WA1995019DONNELLYCORPORATIONWaiverofDomesticandFore.pdf WA1995018OPTICALCOATINGLABORATORYINCWaiverofDomesti.pdf WA00030ASEAMERICASRequesttoAssign...

144

WA_1995_019_DONNELLY_CORPORATION_Waiver_of_Domestic_and_Fore...  

Broader source: Energy.gov (indexed) [DOE]

WA00030ASEAMERICASRequesttoAssignTitletoWaiver-Inv.pdf WA1995018OPTICALCOATINGLABORATORYINCWaiverofDomesti.pdf WA04009ROCKWELLSCIENTIFICCOWailve...

145

Direct and indirect exciton states in GaAs-(Ga, Al)As double quantum wells under crossed electric and magnetic fields  

Science Journals Connector (OSTI)

A theoretical study of the direct and indirect exciton states in GaAs/Ga1-xAlxAs coupled double quantum wells under crossed electric and magnetic fields is presented. The setup of the system under consideration consists of an ... Keywords: 71.55.Eq, 73.20.Mf, 73.21.Fg, Diamagnetic shifts, Double quantum-wells, Magnetoexcitons

L. E. Oliveira; M. de Dios-Leyva; C. A. Duque

2008-03-01T23:59:59.000Z

146

AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics  

SciTech Connect (OSTI)

This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

Sun, K. X.

2011-05-31T23:59:59.000Z

147

Selectivity in the conversion of n-heptane on an Al-PILC modified with Ga  

Science Journals Connector (OSTI)

This work compares the catalytic activity for the hydroisomerization and hydrocracking of n-heptane for two pillared clay materials, one with polyoxycations of Al and the other with the same cation modified by...

Carmen Pesquera; Fernando González…

1995-06-01T23:59:59.000Z

148

Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells  

SciTech Connect (OSTI)

We have investigated the growth and electron transport in In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} two dimensional electron gases (2DEG) and compared their properties with In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As 2DEGs. For 10?nm thick InGaAs wells, the electron mobility of InGaAs/AlAsSb 2DEGs is comparable to that of InGaAs/InAlAs 2DEGs. Upon thinning the wells to 3?nm, the 2DEG mobility is degraded quickly and stronger interface roughness scattering is observed for InGaAs/AlAsSb heterointerfaces than for InGaAs/InAlAs heterointerfaces. Changing the group-V exposure between As and Sb during growth interruptions at the InGaAs/AlAsSb interfaces did not significantly change the 2DEG mobility. With the insertion of a two monolayer InAlAs at the InGaAs/AlAsSb interfaces, the interface roughness scattering is reduced and the mobility greatly increased. The room temperature 2DEG mobility shows 66% improvement from 1.63?×?10{sup 3} cm{sup 2}/V·s to 2.71?×?10{sup 3}?cm{sup 2}/V·s for a 3?nm InGaAs well.

Huang, Cheng-Ying, E-mail: cyhuang@ece.ucsb.edu; Law, Jeremy J. M.; Rodwell, Mark J. W. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Lu, Hong; Gossard, Arthur C. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106-5050 (United States); Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2014-03-28T23:59:59.000Z

149

Study of the interface of undoped and p?doped ZnSe with GaAs and AlAs  

Science Journals Connector (OSTI)

We have used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnSe/AlAs interfaces. The great sensitivity of EER to interface space?charge regions enabled us to detect both interface crossover transitions and transitions to triangular?well interface states. The observation of these transitions provides the first unambiguous proof that the ZnSe/GaAs interface is type I and allowed us to determine the band offsets and band bendings the diffusion lengths across each interface and the amount of interdiffusion.

L. Kassel; H. Abad; J. W. Garland; P. M. Raccah; J. E. Potts; M. A. Haase; H. Cheng

1990-01-01T23:59:59.000Z

150

RAPID/Roadmap/11-WA-a | Open Energy Information  

Open Energy Info (EERE)

Toolkit About Bulk Transmission Geothermal Solar Tools Contribute Contact Us 11-WA-a State Cultural Considerations Overview 11-WA-a - State Cultural Considerations Overview.pdf...

151

X-ray determination of threading dislocation densities in GaN/Al{sub 2}O{sub 3}(0001) films grown by metalorganic vapor phase epitaxy  

SciTech Connect (OSTI)

Densities of a- and a+c-type threading dislocations for a series of GaN films grown in different modes by metalorganic vapor phase epitaxy are determined from the x-ray diffraction profiles in skew geometry. The reciprocal space maps are also studied. Theory of x-ray scattering from crystals with dislocations is extended in order to take into account contribution from both threading and misfit dislocations. The broadening of the reciprocal space maps along the surface normal and the rotation of the intensity distribution ellipse is attributed to misfit dislocations at the interface. We find that the presence of a sharp AlN/GaN interface leads to an ordering of misfit dislocations and reduces strain inhomogeneity in GaN films.

Kopp, Viktor S., E-mail: victor.kopp@pdi-berlin.de; Kaganer, Vladimir M. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin (Germany); Baidakova, Marina V.; Lundin, Wsevolod V.; Nikolaev, Andrey E.; Verkhovtceva, Elena V.; Yagovkina, Maria A. [Ioffe Physical-Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, 194021 St.-Petersburg (Russian Federation); Cherkashin, Nikolay [CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse (France)

2014-02-21T23:59:59.000Z

152

GaN High Power Devices  

SciTech Connect (OSTI)

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

153

WA_1995_009_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

9AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995009AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti...

154

WA_96_016_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domestic_...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

16AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic.pdf WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic.pdf WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomest...

155

WA_1995_014_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

14AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995014AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1995014AIRPRODUCTSANDCHEMICALSINCWaiverofDomest...

156

WA_1994_034_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Domesti...  

Broader source: Energy.gov (indexed) [DOE]

4034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDomesti.pdf WA1994034AIRPRODUCTSANDCHEMICALSINCWaiverofDom...

157

WA_99_017_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Domestic_and_...  

Broader source: Energy.gov (indexed) [DOE]

9017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand.pdf WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand.pdf WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesti...

158

WA_04_028_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_patent_Rights...  

Broader source: Energy.gov (indexed) [DOE]

8AIRPRODUCTSANDCHEMICALSWaiverofpatentRights.pdf WA04028AIRPRODUCTSANDCHEMICALSWaiverofpatentRights.pdf WA04028AIRPRODUCTSANDCHEMICALSWaiverofpatentRigh...

159

WA_1993_028_ALLIANCE_ELECTRIC_COMPANY_Waiver_of_Domestic_and...  

Broader source: Energy.gov (indexed) [DOE]

3028ALLIANCEELECTRICCOMPANYWaiverofDomesticand.pdf WA1993028ALLIANCEELECTRICCOMPANYWaiverofDomesticand.pdf WA1993028ALLIANCEELECTRICCOMPANYWaiverofDomestic...

160

WA_98_006_WESTINGHOUSE_POWER_GENERATION_A_FORMER_DIVISION_OF...  

Broader source: Energy.gov (indexed) [DOE]

6WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98006WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98006WESTINGHOUSEPOWERGENERATIONAFORMERDIVISION...

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

WA_98_005_WESTINGHOUSE_POWER_GENERATION_A_FORMER_DIVISION_OF...  

Broader source: Energy.gov (indexed) [DOE]

5WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98005WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98005WESTINGHOUSEPOWERGENERATIONAFORMERDIVISION...

162

WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS  

Broader source: Energy.gov (indexed) [DOE]

WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS Energy Efficiency and Conservation Block Grant Program Location: Tribe WA-TRIBE- STILLAGUAMISH TRIBE OF INDIANS WA American Recovery and Reinvestment Act: Proposed Action or Project Description The Stillaguamish Tribe proposes to expand its Stillaguamish Tribe Transit Services (STTS). For the past three years, the STTS has employed 14-passenger buses to transport clients to and from the tribal medical, dental, behavioral health and massage clinics. Often the demand-response requests that come to STTS are for one to three passengers at a time; therefore, funds are being requested to purchase a hybrid sedan to transport clients. Conditions: None Categorical Exclusion(s) Applied: A1, B1.32, B5.1 *-For the complete DOE National Environmental Policy Act regulations regarding categorical exclusions, see Subpart D of 10 CFR10 21

163

Above room-temperature operation of InAs/AlGaSb superlattice quantum cascade lasers emitting at 12 {mu}m  

SciTech Connect (OSTI)

The authors report on above-room-temperature operation of InAs/AlGaSb quantum cascade lasers emitting at 12 {mu}m. The laser structures are grown on a n-InAs (100) substrate using solid-source molecular beam epitaxy. An InAs/AlGaSb superlattice is used as an active part and an InAs double plasmon waveguide is used for optical confinement. Results show that increased doping concentration in the injection part of the active region expands the current operation range of the devices, allowing laser operation at and above room temperature. The observed threshold current density is 4.0 kA/cm{sup 2} at 300 K; the maximum operation temperature is 340 K.

Ohtani, K.; Moriyasu, Y.; Ohnishi, H.; Ohno, H. [Laboratory for Nanoelectronics and Semiconductor Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)

2007-06-25T23:59:59.000Z

164

Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy  

SciTech Connect (OSTI)

Nominally lattice matched InAlN/GaN was grown by plasma-assisted molecular beam epitaxy, and the intrinsic microstructure was investigated via x-ray diffraction, transmission electron microscopy, and atom probe tomography. The InAlN showed a cellular structure, which was comprised of {approx}10 nm wide Al-rich cores and {approx}1 nm In-rich InAlN intercellular boundaries. Despite the strong laterally non-uniform In distribution, both vertical and lateral lattices are unperturbed by the cellular structure, as evidenced by strong thickness fringes in on-axis {omega}-2{theta} high resolution x-ray diffraction scans, coherence lengths derived from on-axis (0002) and off-axis (1012) {omega}-2{theta} high resolution x-ray diffraction scans, and a modified Williamson-Hall analysis for on-axis reflections.

Choi, Soojeong; Wu Feng; Shivaraman, Ravi; Young, Erin C.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2012-06-04T23:59:59.000Z

165

Characterization of heavy masses of two-dimensional conduction subband in InGaAs/InAlAs MQW structures by pulsed cyclotron resonance technology  

SciTech Connect (OSTI)

Conduction-band effective masses in a direction parallel to the quantum well plane were investigated in n-type-modulation-doped InGaAs/InAlAs multiquantum well system. Thicknesses of well and barrier were 5 and 10 nm. Three highly-doped specimens having about 1 {times} 10{sup 12} cm{sup {minus}2} per one quantum well were prepared by MBE. Double-crystal X-ray diffraction was used to check the crystal quality. Heavy electron effective masses, almost 50% bigger than the band edge mass of 0.041m{sub 0}, were measured by far-infrared and infrared cyclotron resonances under pulse high magnetic fields up to 100 T. Nonparabolicity of this subband was less than 12% by comparing the two cyclotron resonances. Observed two-dimensional subband structure was quite different from conduction-band effective mass in a direction perpendicular to the same quantum well and from GaAs/GaAlAs quantum well system.

Kotera, N.; Tanaka, K. [Kyushu Inst. of Technology, Iizuka, Fukuoka (Japan); Arimoto, H.; Miura, N. [Univ. of Tokyo, Roppongi, Tokyo (Japan). Inst. of Solid State Physics; Jones, E.D. [Sandia National Labs., Albuquerque, NM (United States); Mishima, T. [Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.; Washima, M. [Hitachi Cable, Ltd., Tsukuba, Ibaraki (Japan). Advanced Research Center

1998-05-01T23:59:59.000Z

166

WA_98_016_ABB_POWER_T_AND_D_COMPANY_Waiver_of_Domestic_and_F...  

Broader source: Energy.gov (indexed) [DOE]

More Documents & Publications Advance Patent Waiver W(A)2011-046 Advance Patent Waiver W(A)2009-016 WA96016AIRPRODUCTSANDCHEMICALSINCWaiverofDomestic...

167

Advance Patent Waiver W(A)2009-030 | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

public. Advance Patent Waiver W(A)2009-030 More Documents & Publications WA97030AIRPRODUCTSWaiverofDomesticandForeignPaten.pdf WA98001REYNOLDSMETALSCOMPANYW...

168

WA_04_085_THE_BOEING_COMPANY_Waiver_of_domestic_and_Foreign_...  

Broader source: Energy.gov (indexed) [DOE]

More Documents & Publications Advance Patent Waiver W(A)2010-018 Advance Patent Waiver W(A)2007-012 WA99017AIRPRODUCTSANDCHEMICALSWaiverofDomesticand...

169

WA_00_025_PRAXAIR_INC_Waiver_Request.pdf | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

25PRAXAIRINCWaiverRequest.pdf WA00025PRAXAIRINCWaiverRequest.pdf WA00025PRAXAIRINCWaiverRequest.pdf More Documents & Publications WA00001PRAXAIRINCWaiverofDo...

170

WA_00_035_ALCOA_INC_Waiver_of_Domestic_and_Foreign_Rights_in...  

Broader source: Energy.gov (indexed) [DOE]

& Publications WA03054HEILTRAILERINTERNATIONALWaiverofDomesticand.pdf WA00011HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf Advance Patent Waiver W(A)2010-051...

171

WA_03_054_HEIL_TRAILER_INTERNATIONAL_Waiver_of_Domestic_and_...  

Broader source: Energy.gov (indexed) [DOE]

& Publications WA00035ALCOAINCWaiverofDomesticandForeignRightsin.pdf WA00011HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf Advance Patent Waiver W(A)2010-051...

172

W(A)94-022 STATEMENT OF CONSIDERATIONS  

Broader source: Energy.gov (indexed) [DOE]

4-022 4-022 STATEMENT OF CONSIDERATIONS Request by Cummins Power Generation, Inc., for an Advance Waiver of Domestic and Foreign Patent Rights to Inventions made under a contract entitled "Utility Scale Joint Venture Project," between Cummins Power Generation, Inc. and Sandia National Laboratories (Contract No. AB- 8717B) under Management and Operations Contract DE-AL04-84AL85000, DOE Docket No. W(A)94-022. The petitioner, Cummins Power Generation, Inc., (CPG) has requested a waiver of all domestic and foreign patent rights to inventions which it may conceive or first actually reduce to practice in the course of work under the Utility Scale Joint Venture Project between Petitioner and Sandia National Laboratories (Sandia) under contract No. AB- 8717B. Sandia is operated by Sandia Corporation for the U.S. Department of Energy (DOE).

173

W(A)93-013 STATEMENT OF CONSIDERATIONS  

Broader source: Energy.gov (indexed) [DOE]

13 13 STATEMENT OF CONSIDERATIONS Request by AlliedSignal, Inc. for Waiver of Domestic and Foreign Patent Rights to inventions that may arise under Contract No. DE-FC04-93AL94462 between the United States Department of Energy (DOE) and AlliedSignal, Inc. DOE Docket: W(A)93-013 The Petitioner, AlliedSignal, Inc. (AlliedSignal), has requested a waiver of all domestic and foreign patent rights to inventions which it may conceive or reduce to practice in the course of work under Contract No. DE-FC04-93AL94462, a Cooperative Agreement with DOE. The project period is May 14, 1993 through May 13, 1996. The Cooperative Agreement covers work in designing a biological/chemical production process for caprolactam using microbial bioprocesses that convert cyclohexane to

174

W(A)93-039 STATEMENT OF CONSIDERATIONS  

Broader source: Energy.gov (indexed) [DOE]

39 39 STATEMENT OF CONSIDERATIONS Request by Air Products and Chemicals, Inc. for Waiver of Domestic and Foreign Patent Rights to inventions that may arise under Contract No. DE-FC04-93AL94461 between the United States Department of Energy (DOE) and Air Products and Chemicals, Inc. DOE Docket: W(A)93-039. The Petitioner, Air Products and Chemicals, Inc., (Air Products) has requested a waiver of all domestic and foreign patent rights to inventions which it may conceive or reduce to practice in the course of work under Contract No. DE-FC04-93AL94461 a Cooperative Agreement with DOE. The contract covers a four phase development program for a recently patented technology developed at Air Products entitled "Novel Selective Surface Flow (SSF T ) Membranes for the

175

First-principles study of compensation mechanisms in negatively charged LaGaO3/MgAl2O4 interfaces  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

Thin film oxide heterostructures with a bound charge at the interface require electrical compensation, which can involve redistribution of mobile charge carriers. We explore a model LaGaO3(001)//MgAl2O4(001) heterostructure with nominally negatively charged interfaces using first-principles methods and a Poisson-Boltzmann equation. We find that charge compensation by oxygen vacancies with quadratically decaying concentration away from the interface is more favorable than electronic redistribution. These vacancies have a potential to enhance ionic conductivity along the interfaces.

Rébola, Alejandro; Fong, Dillon D.; Eastman, Jeffrey A.; Ö?üt, Serdar; Zapol, Peter

2013-06-01T23:59:59.000Z

176

RAPID/Roadmap/4-WA-a | Open Energy Information  

Open Energy Info (EERE)

4-WA-a State Exploration Process 4-WA-a State Exploration Process.pdf Click to View Fullscreen Permit Overview Developers desiring to conduct geothermal exploration activities on...

177

RAPID/Roadmap/3-WA-b | Open Energy Information  

Open Energy Info (EERE)

needs access to state lands for exploratory purposes, then they should begin the State Exploration Process. Green arrow.PNG 4-WA-a: State Exploration Process 3-WA-b.3 to...

178

RAPID/Roadmap/19-WA-f | Open Energy Information  

Open Energy Info (EERE)

9-WA-f Water Well NOI for Replacement or Additional Wells 19-WA-f - Water Well NOI for Replacement or Additional Wells.pdf Click to View Fullscreen Permit Overview A developer...

179

RECIPIENT:WA Dept. of Commerce STATE: WA PROJECT SEP ARRA SIRTI -  

Broader source: Energy.gov (indexed) [DOE]

WA Dept. of Commerce STATE: WA WA Dept. of Commerce STATE: WA PROJECT SEP ARRA SIRTI - Demand Energy - Energy Storage System Tied to Solar on Commercial Facility TITLE: Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number cm Number DE-FOA-0000052 DE-EEOOO0139 GFO-o000139-031 Based on my review ofthe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4S1.1A), I have made the following determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and demand studies), and dissemination (including, but not limited to, document mailings, publication, and distribution;

180

LBNL-4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

4183E-rev1 4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI IA AB BI IL LI IT TY Y I IN N C CA AL LI IF FO OR RN NI IA A: : E EN NV VI IR RO ON NM ME EN NT TA AL L I IM MP PA AC CT TS S A AN ND D D DE EV VI IC CE E P PE ER RF FO OR RM MA AN NC CE E E EX XP PE ER RI IM ME EN NT TA AL L E EV VA AL LU UA AT TI IO ON N O OF F I IN NS ST TA AL LL LE ED D C CO OO OK KI IN NG G E EX XH HA AU US ST T F FA AN N P PE ER RF FO OR RM MA AN NC CE E Brett C. Singer, William W. Delp and Michael G. Apte Indoor Environment Department Atmospheric Sciences Department Environmental Energy Technologies Division July 2011 (Revised February 2012) Disclaimer 1 This document was prepared as an account of work sponsored by the United States Government. While this document is believed to contain correct information, neither the United States Government nor any agency thereof, nor The Regents of the University of California, nor any of

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
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181

AL  

E-Print Network [OSTI]

AL. EMERGENCY PREPAREDNESS SYLLABUS ATTACHMENT. EMERGENCY NOTIFICATION PROCEDURES are based on a simple concept - if you hear a.

182

PUBLISHED ONLINE: 17 OCTOBER 2010 | DOI: 10.1038/NMAT2879 Waterproof AlInGaP optoelectronics on  

E-Print Network [OSTI]

InGaP optoelectronics on stretchable substrates with applications in biomedicine and robotics Rak-Hwan Kim1 , Dae opportunities for optoelectronic devices. A ll established forms of inorganic light-emitting diodes (LEDs restricting the ways in which these devices can be used. Research in organic optoelectronic materials

Rogers, John A.

183

Advance Patent Waiver W(A)2011-011 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

W(A)2011-011 More Documents & Publications Advance Patent Waiver W(A)2008-011 Advance Patent Waiver W(A)2008-045 WA07038POETPROJECTLIBERTYLLCWaiverofDomesticandFo...

184

Advance Patent Waiver W(A)2005-006 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

W(A)2005-006 More Documents & Publications Advance Patent Waiver W(A)2008-022 WA04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf Advance Patent Waiver W(A)2011-063...

185

Advance Patent Waiver W(A)2002-023 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

2-023 Advance Patent Waiver W(A)2002-023 Advance Patent Waiver W(A)2002-023 More Documents & Publications Advance Patent Waiver W(A)2006-028 WA05056IBMWATSONRESEARCHCENTERWa...

186

Localized electrons in the metallic phase of the two-dimensional electron system at ,,Al,Ga...As-GaAs heterojunctions  

E-Print Network [OSTI]

Localized electrons in the metallic phase of the two-dimensional electron system at ,,Al, United Kingdom Received 29 October 1996 Using the effect of electron focusing we measure the Fermi wave vector of the delocalized electrons in a two-dimensional 2D electron system. After obtaining the total

Ludwig-Maximilians-Universität, München

187

WA_-01_001_PHILLIPS_PETROLEUM_Waiver_of_Domestic_and_Foreign...  

Broader source: Energy.gov (indexed) [DOE]

-01001PHILLIPSPETROLEUMWaiverofDomesticandForeign.pdf WA-01001PHILLIPSPETROLEUMWaiverofDomesticandForeign.pdf WA-01001PHILLIPSPETROLEUMWaiverofDomesticand...

188

WA_07_038_POET_PROJECT_LIBERTY_LLC_Waiver_of_Domestic_and_Fo...  

Broader source: Energy.gov (indexed) [DOE]

7038POETPROJECTLIBERTYLLCWaiverofDomesticandFo.pdf WA07038POETPROJECTLIBERTYLLCWaiverofDomesticandFo.pdf WA07038POETPROJECTLIBERTYLLCWaiverofDomestic...

189

WA_1993_041_ROCKETDYNE_AND_LLNL_Waiver_of_the_Governments_U.pdf...  

Broader source: Energy.gov (indexed) [DOE]

1ROCKETDYNEANDLLNLWaiveroftheGovernmentsU.pdf WA1993041ROCKETDYNEANDLLNLWaiveroftheGovernmentsU.pdf WA1993041ROCKETDYNEANDLLNLWaiveroftheGovernmentsU.pd...

190

WA_1993_042_UNITED_TECHNOLOGIES_CORPORATION_Waiver_of_the_Go...  

Broader source: Energy.gov (indexed) [DOE]

TIONWaiveroftheGo.pdf More Documents & Publications WA1993040REGENTSOFTHEUNIVERSITYOFCALIFORNIAWaivero.pdf WA1993041ROCKETDYNEANDLLNLWaiveroftheGovernmentsU...

191

WA_99_015_FORD_MOTOR_COMPANY_Waiver_of_Domestic_and_Foreign_...  

Broader source: Energy.gov (indexed) [DOE]

COMPANYWaiverofDomesticandForeign.pdf More Documents & Publications WA97038FORDMOTORCOMPANYWaiverofDomesticandForeign.pdf WA98008GENERALELECTRICCOMPANYWaive...

192

WA_99_022_AIR_PRODUCTS_AND_CHEMICAL_Waiver_of_Domestic_and_F...  

Broader source: Energy.gov (indexed) [DOE]

9022AIRPRODUCTSANDCHEMICALWaiverofDomesticandF.pdf WA99022AIRPRODUCTSANDCHEMICALWaiverofDomesticandF.pdf WA99022AIRPRODUCTSANDCHEMICALWaiverofDomestic...

193

WA_02_015_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Patent_Ri...  

Broader source: Energy.gov (indexed) [DOE]

15AIRPRODUCTSANDCHEMICALSINCWaiverofPatentRi.pdf WA02015AIRPRODUCTSANDCHEMICALSINCWaiverofPatentRi.pdf WA02015AIRPRODUCTSANDCHEMICALSINCWaiverofPatent...

194

WA_04_063_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Broader source: Energy.gov (indexed) [DOE]

63AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRig...

195

WA_04_083_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Broader source: Energy.gov (indexed) [DOE]

83AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04083AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04083AIRPRODUCTSANDCHEMICALSWaiverofPatentRig...

196

WA_01_005__PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_patent...  

Broader source: Energy.gov (indexed) [DOE]

1005PRAXAIRINCWaiverofDomesticandForeignpatent.pdf WA01005PRAXAIRINCWaiverofDomesticandForeignpatent.pdf WA01005PRAXAIRINCWaiverofDomesticandForeign...

197

WA_01_022_PRAXAIR_INC_AND_BP_AMOCO_Waiver_of_Domestic_and_Fo...  

Broader source: Energy.gov (indexed) [DOE]

1022PRAXAIRINCANDBPAMOCOWaiverofDomesticandFo.pdf WA01022PRAXAIRINCANDBPAMOCOWaiverofDomesticandFo.pdf WA01022PRAXAIRINCANDBPAMOCOWaiverofDomestic...

198

WA_03_018_HONEYWELL_INTERNATIONAL_Waiver_of_Domestic_and_For...  

Broader source: Energy.gov (indexed) [DOE]

3018HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA03018HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA03018HONEYWELLINTERNATIONALWaiverofDomestica...

199

WA_02_028_TRANE_CO__Waiver_of_Domestic_and_Foreign_Rights_in...  

Broader source: Energy.gov (indexed) [DOE]

5YORKINTERNATIONALCORPORATIONWaiverofDomesti.pdf WA01034INGERSOLL-RANDENERGYSYSTEMSWaiverofDomestica.pdf WA01011HONEYWELLLABORATORIESWaiverofDomesticandFore...

200

WA_04_040_HONEYWELL_INTERNATIONAL_INC_Waiver_of_Patent_Right...  

Broader source: Energy.gov (indexed) [DOE]

40HONEYWELLINTERNATIONALINCWaiverofPatentRight.pdf WA04040HONEYWELLINTERNATIONALINCWaiverofPatentRight.pdf WA04040HONEYWELLINTERNATIONALINCWaiverofPatentRi...

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
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to obtain the most current and comprehensive results.


201

WA_03_041_HONEYWELL_INTERNATIONAL_Waiver_of_Domestic_and_For...  

Broader source: Energy.gov (indexed) [DOE]

3041HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA03041HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA03041HONEYWELLINTERNATIONALWaiverofDomestica...

202

WA_01_011_HONEYWELL_LABORATORIES_Waiver_of_Domestic_and_Fore...  

Broader source: Energy.gov (indexed) [DOE]

11HONEYWELLLABORATORIESWaiverofDomesticandFore.pdf WA01011HONEYWELLLABORATORIESWaiverofDomesticandFore.pdf WA01011HONEYWELLLABORATORIESWaiverofDomesticandF...

203

WA_00_011_HONEYWELL_INTERNATIONAL_Waiver_of_Domestic_and_For...  

Broader source: Energy.gov (indexed) [DOE]

0011HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA00011HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA00011HONEYWELLINTERNATIONALWaiverofDomestica...

204

WA_00_010_ROCKWELL_SCIENCE_CENTER_A_Subcontractor_of_SILICON...  

Broader source: Energy.gov (indexed) [DOE]

NTERASubcontractorofSILICON.pdf More Documents & Publications WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA01034INGERSOLL-RANDENERGYSYSTEMSWaiverof...

205

WA_04_034_NUVERA_FUEL_CELLS_INC_Waiver_of_Domestic_and_Forei...  

Broader source: Energy.gov (indexed) [DOE]

34NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04034NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04034NUVERAFUELCELLSINCWaiverofDomesticandFo...

206

WA_04_041_NUVERA_FUEL_CELLS_INC_Waiver_of_Domestic_and_Forei...  

Broader source: Energy.gov (indexed) [DOE]

41NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04041NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04041NUVERAFUELCELLSINCWaiverofDomesticandFo...

207

Theoretical investigation of direct and phonon-assisted tunneling currents in InAlGaAs/InGaAs bulk and quantum-well interband tunnel junctions for multijunction solar cells  

Science Journals Connector (OSTI)

Direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk and double-quantum-well interband tunnel heterojunctions are simulated rigorously using the nonequilibrium Green's function formalism for coherent and dissipative quantum transport in combination with a simple two-band tight-binding model for the electronic structure. A realistic band profile and the associated built-in electrostatic field are obtained via self-consistent coupling of the transport formalism to Poisson's equation. The model reproduces experimentally observed features in the current-voltage characteristics of the devices, such as the pronounced current enhancement in the quantum-well junction as compared to the bulk junction and the structure appearing in the negative-differential resistance regime due to quantization of emitter states. Local maps of density of states and the current spectrum reveal the impact of quasibound states, electric fields, and electron-phonon scattering on the interband tunneling current. In this way, resonances appearing in the current through the double-quantum-well structure in the negative-differential resistance regime can be related to the alignment of subbands in the coupled quantum wells.

U. Aeberhard

2013-02-05T23:59:59.000Z

208

BayWa Group | Open Energy Information  

Open Energy Info (EERE)

BayWa Group BayWa Group Jump to: navigation, search Name BayWa Group Place Munich, Germany Zip 81925 Sector Services, Solar Product Germany-based company with international operations specialised in wholesale and retail and in providing services. The company is also active in the biofuel and solar sectors. Coordinates 48.136415°, 11.577531° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":48.136415,"lon":11.577531,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

209

Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy  

SciTech Connect (OSTI)

The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superlinear luminescence and increased optical power as a function of the pump current in the photon energy range of 0.6-0.8 eV are observed at temperatures of T = 77 and 300 K. The photoelectric, current-voltage, and capacitance characteristics of these heterostructures are studied in detail. The photosensitivity is examined with photodetectors operating in the photovoltaic mode in the spectral range of 0.9-2.0 {mu}m. The sensitivity maximum at room temperature is observed at a wavelength of 1.55 {mu}m. The quantum efficiency, detectivity, and response time of the photodetectors were estimated. The quantum efficiency and detectivity at the peak of the photosensitivity spectrum are as high as {eta} = 0.6-0.7 and D{sub {lambda}max}{sup *} = (5-7) Multiplication-Sign 10{sup 10} cm Hz{sup 1/2} W{sup -1}, respectively. The photodiode response time determined as the rise time of the photoresponse pulse from 0.1 to the level 0.9 is 100-200 ps. The photodiode transmission bandwidth is 2-3 GHz. Photodetectors with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates are promising foruse in heterodyne detection systems and in information technologies.

Mikhailova, M. P.; Andreev, I. A., E-mail: igor@iropt9.ioffe.ru; Ivanov, E. V.; Konovalov, G. G.; Grebentshikova, E. A.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Hulicius, E.; Hospodkova, A.; Pangrac, Y. [Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)] [Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)

2013-08-15T23:59:59.000Z

210

Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint  

SciTech Connect (OSTI)

We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 ?m to a modest 0.50 ?m over an underlying 0.10-?m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 ?m/3 ?m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

2011-07-01T23:59:59.000Z

211

Thickness Effect of Al-Doped ZnO Window Layer on Damp-Heat Stability of CuInGaSe2 Solar Cells  

SciTech Connect (OSTI)

We investigated the damp heat (DH) stability of CuInGaSe{sub 2} (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 {micro}m to a modest 0.50 {micro}m over an underlying 0.10-{micro}m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 {micro}m/3 {micro}m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85 C and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

2011-01-01T23:59:59.000Z

212

Effect of Hydrogen and Nitrogen Carrier Gas Ratio on the Structural and Optical Properties of AlInGaN Alloy  

Science Journals Connector (OSTI)

Undoped AlInGaN epilayers on GaN templates with different hydrogen (H2) and nitrogen (N2) carrier gas ratios (1:8, 2:8, and 3:8 as samples 1, 2 and 3, respectively) were grown. When the flow ratio of H2 and N2 rises from 1:8 to 3:8, an indium composition decrease from 3% to 1.2% is observed while the aluminum content stays constant at any flow ratio. Due to the quantum-dot-like effect, photoluminescence intensity is enhanced in the sample with the low carrier gas flow ratio of H2/N2. However, the potential well caused by indium uneven distribution is nonuniform, which is more severe in the sample with carrier gas flow ratio 1:8. The process of carrier transfer from shallow to deep potential wells would be more difficult to accomplish, resulting in the reduction of the photoluminescence intensity. This is found to be consistent with the carriers' lifetime with the help of time-resolved photoluminescence.

Feng Xiang-Xu (???); Liu Nai-Xin (???); Zhang Lian (??); Zhang Ning (??); Zeng Jian-Ping (???); Wei Xue-Cheng (???); Liu Zhe (??); Wei Tong-Bo (???); Wang Jun-Xi (???); Li Jin-Min (???)

2013-01-01T23:59:59.000Z

213

Broadening and splitting of emission spectra of a GaInAs/AlInAs quantum cascade laser in a quantising magnetic field  

SciTech Connect (OSTI)

We have studied the effect of a relatively weak quantising magnetic field on emission spectra of a GaInAs/AlInAs quantum cascade laser near 10 K. The results demonstrate that, as the magnetic field induction increases to 7 T, the spectra broaden (to 5 meV) and split into three emission bands. As a result, we observe simultaneously up to 80 longitudinal lasing modes in the three bands and the integrated laser output intensity increases 70 times. The presence of bands in the emission spectra can be accounted for in terms of the magnetic quantisation of the laser levels into spinsplit Landau levels. The increase in emission intensity is attributable primarily to phonon resonance adjustment in a magnetic field. (lasers)

Zasavitskii, I I; Pashkeev, D A; Bushuev, E V; Mikaelyan, G T

2013-02-28T23:59:59.000Z

214

A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanche photodiode with a flip-chip structure for wavelengths of 1. 3 and 1. 55 [mu]m  

SciTech Connect (OSTI)

This paper reports the fabrication of a flip-chip InGaAsP-InAlAs superlattice avalanche photodiode using gas source molecular beam epitaxy. The incident light reaches the InGaAs photoabsorption layer through the InP substrate and an InGaAsP-InAlAs superlattice multiplication region which are transparent for wavelengths of 1.55 and 1.3 [mu]m. The light reflection by the electrode enables the absorption layer to be as thin as 0.8 [mu]m without significantly reducing the quantum efficiency. A maximum bandwidth of 17 GHz was obtained at a low multiplication factor because of the transit time through the absorption layer is reduced.

Kagawa, Toshiaki; Kawamura, Yuichi; Iwamura, Hidetoshi (NTT Opto-electronics Labs., Atsugi-shi, Kanagawa (Japan))

1993-05-01T23:59:59.000Z

215

Built-in biaxial strain dependence of I'-X transport in GaAs/ln,Al, -,AsJGaAs pseudomorphic heterojunction barriers (x=0, 0.03, and 0.06)  

E-Print Network [OSTI]

of thermionic emission and tunneling currents for the case of IT-X transport are signifi- cantly smaller thanBuilt-in biaxial strain dependence of I'-X transport in GaAs/ln,Al, -,AsJGaAs pseudomorphic 5800, Albuquerque, New Mexico 8718.5-1370 (Received 12 May 1994; accepted for publication 26 August

Yang, Kyounghoon

216

Zigzag and helical AlN layer prepared by glancing angle deposition and its application as a buffer layer in a GaN-based light-emitting diode  

Science Journals Connector (OSTI)

This study investigates an aluminum nitride (AlN) nanorod structure sputtered by glancing angle deposition (GLAD) and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The ray tracing ...

Lung-Chien Chen; Ching-Ho Tien; Liu Xuguang; Xu Bingshe

2012-01-01T23:59:59.000Z

217

Band alignment of HfO{sub 2}/Al{sub 0.25}Ga{sub 0.75}N determined by x-ray photoelectron spectroscopy: Effect of SiH{sub 4} surface treatment  

SciTech Connect (OSTI)

The band-alignment of atomic layer deposited (ALD)-HfO{sub 2}/Al{sub 0.25}Ga{sub 0.75}N was studied by high resolution x-ray photoelectron spectroscopy measurements for both the non-passivated and SiH{sub 4} passivated AlGaN surfaces. The valence band offset and the conduction band offset for the ALD-HfO{sub 2}/Al{sub 0.25}Ga{sub 0.75}N interface were found to be 0.43?eV and 1.47?eV, respectively, for the non-passivated sample, and 0.59?eV and 1.31?eV, respectively, for the SiH{sub 4}-passivated sample. The difference in the band alignment is dominated by the band bending or band shift in the AlGaN substrate as a result of the different interlayers formed by the two surface preparations.

Samuel Owen, Man Hon, E-mail: m.owen.sg@ieee.org, E-mail: yeo@ieee.org; Amin Bhuiyan, Maruf; Zhou, Qian; Yeo, Yee-Chia, E-mail: m.owen.sg@ieee.org, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260 (Singapore); Zhang, Zheng; Sheng Pan, Ji [Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

2014-03-03T23:59:59.000Z

218

BayWa Sunways JV | Open Energy Information  

Open Energy Info (EERE)

Sunways JV Jump to: navigation, search Name: BayWa & Sunways JV Place: Germany Sector: Solar Product: Germany-based JV that specialises in developing, planning and realizing...

219

RAPID/Roadmap/14-WA-b | Open Energy Information  

Open Energy Info (EERE)

RAPID Regulatory and Permitting Information Desktop Toolkit BETA RAPID Toolkit About Bulk Transmission Geothermal Solar Tools Contribute Contact Us 14-WA-b NPDES Permit...

220

RAPID/Roadmap/9-WA-a | Open Energy Information  

Open Energy Info (EERE)

(EIS) is necessary. Contact Information Agency Washington State Department of Ecology Position State Environmental Issues Contact Name Fran Sant Email fran.sant@ecy.wa.gov...

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Fourth Annual SECA Meeting - Seattle, WA  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Fourth Annual SECA Meeting - Seattle, WA Fourth Annual SECA Meeting - Seattle, WA April 15-16, 2003 Table of Contents Disclaimer Papers and Presentations Expanded Applications of SECA Fuel Cells SECA Industrial Team Reports Military Applications of Fuel Cells Technology Highlights Environmental Considerations Disclaimer This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government or any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof.

222

Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs  

E-Print Network [OSTI]

. heavily doped GaAs 001 substrates at 650 °C with TMG Ga CH3 3 and arsine AsH3 V/III=23 with disilane Si2H6

223

Innovational radiation sensor by integrating AL2O3:C optically stimulated luminescent dosemeter and GaN detectors  

Science Journals Connector (OSTI)

......dosimetry (i.e. an active dosemeter) or one...detectable dose and the active performance of the...various applications. MATERIALS AND METHODS alpha-Al2O3...by the ratio of cathode current to optical...could be operated in active mode. | Department...radiation effects Light Materials Testing Photochemistry......

Tai-Chang Chen; Kunakorn Poochinda; Thomas G. Stoebe

2006-09-01T23:59:59.000Z

224

AlGaInP thin-film LED with omni-directionally reflector and ITO transparent conducting n-type contact  

Science Journals Connector (OSTI)

In this paper a novel AlGaInP thin-film light-emitting diode (LED) with omni-directionally reflector (ODR) and transparent conducting indium tin oxide (ITO) n-type contact structure is proposed, and fabrication process is developed. This reflector is realized with the combination of a low-refractive-index dielectric layer and a high reflectivity metal layer. This allows the light emitted or internally reflected downwardly towards the GaAs substrate at any angle of incidence to be reflected towards the top surface of the chip. ITO n-type contact is used for anti-reflection and current spreading layers on the ODR-LED with ITO. The sheet resistance of the ITO films (95 nm) deposited on n-ohmic contact of ODR-LED is of the order 23.5?/ with up to 90% transmittance (above 92% for 590–770 nm) in the visible region of the spectrum. The optical and electrical characteristics of the ODR-LED with ITO are presented and compared to conventional AS-LED and ODR-LED without ITO. It is shown that the light output from the ODR-LED with ITO at forward current 20 mA exceeds that of AS-LED and ODR-LED without ITO by about a factor of 1.63 and 0.16, respectively. A favourable luminous intensity of 218.3 mcd from the ODR-LED with ITO (peak wavelength 620 nm) could be obtained under 20 mA injection, which is 2.63 times and 1.21 times higher than that of AS-LED and ODR-LED without ITO, respectively.

Zhang Jian-Ming; Zou De-Shu; Xu Chen; Guo Wei-Ling; Zhu Yan-Xu; Liang Ting; Da Xiao-Li; Li Jian-Jun; Shen Guang-Di

2007-01-01T23:59:59.000Z

225

waTer economics. environmenTand Policy  

E-Print Network [OSTI]

41 cenTre for waTer economics. environmenTand Policy "Men and nature must work hand in hand and public policy insights for the supply, demand, management, and governance of water CWEEP pronounced `sweep' as in to survey so as to obtain a whole and continuous view of the world #12;42 waTer is a cri

Botea, Adi

226

RECIPIENT:WA Department of Commerce STATE: WA PROJECT Van Dyk Dairy Anaerobic Digester  

Broader source: Energy.gov (indexed) [DOE]

of5 of5 RECIPIENT:WA Department of Commerce STATE: WA PROJECT Van Dyk Dairy Anaerobic Digester TITLE: Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number cm Number DE-EE0000139 GF0-10-604 Based on my review oftbe information concerning the proposed action, as NEPA CompUance Officer (authorized under DOE Order 451.1A), I have made the foUowing determination: cx, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and demand studies), and dissemination (including, but not limited to, document mailings, publication, and distribution;

227

Hanford, WA Selected as Plutonium Production Facility | National Nuclear  

National Nuclear Security Administration (NNSA)

Hanford, WA Selected as Plutonium Production Facility | National Nuclear Hanford, WA Selected as Plutonium Production Facility | National Nuclear Security Administration Our Mission Managing the Stockpile Preventing Proliferation Powering the Nuclear Navy Emergency Response Recapitalizing Our Infrastructure Continuing Management Reform Countering Nuclear Terrorism About Us Our Programs Our History Who We Are Our Leadership Our Locations Budget Our Operations Media Room Congressional Testimony Fact Sheets Newsletters Press Releases Speeches Events Social Media Video Gallery Photo Gallery NNSA Archive Federal Employment Apply for Our Jobs Our Jobs Working at NNSA Blog Home > About Us > Our History > NNSA Timeline > Hanford, WA Selected as Plutonium Production Facility Hanford, WA Selected as Plutonium Production Facility January 16, 1943 Hanford, WA

228

Advance Patent Waiver W(A)2008-035 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

public. Advance Patent Waiver W(A)2008-035 More Documents & Publications WA07038POETPROJECTLIBERTYLLCWaiverofDomesticandFo.pdf Advance Patent Waiver W(A)2008-022...

229

Advance Patent Waiver W(A)2010-042 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Waiver W(A)2010-042 More Documents & Publications Advance Patent Waiver W(A)2005-023 WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf ClassWaiverWC-2003-001.pdf...

230

Effective passivation of In{sub 0.2}Ga{sub 0.8}As by HfO{sub 2} surpassing Al{sub 2}O{sub 3} via in-situ atomic layer deposition  

SciTech Connect (OSTI)

High {kappa} gate dielectrics of HfO{sub 2} and Al{sub 2}O{sub 3} were deposited on molecular beam epitaxy-grown In{sub 0.2}Ga{sub 0.8}As pristine surface using in-situ atomic-layer-deposition (ALD) without any surface treatment or passivation layer. The ALD-HfO{sub 2}/p-In{sub 0.2}Ga{sub 0.8}As interface showed notable reduction in the interfacial density of states (D{sub it}), deduced from quasi-static capacitance-voltage and conductance-voltage (G-V) at room temperature and 100 Degree-Sign C. More significantly, the midgap peak commonly observed in the D{sub it}(E) of ALD-oxides/In{sub 0.2}Ga{sub 0.8}As is now greatly diminished. The midgap D{sub it} value decreases from {>=}15 Multiplication-Sign 10{sup 12} eV{sup -1} cm{sup -2} for ALD-Al{sub 2}O{sub 3} to {approx}2-4 Multiplication-Sign 10{sup 12} eV{sup -1} cm{sup -2} for ALD-HfO{sub 2}. Further, thermal stability at 850 Degree-Sign C was achieved in the HfO{sub 2}/In{sub 0.2}Ga{sub 0.8}As, whereas C-V characteristics of Al{sub 2}O{sub 3}/p-In{sub 0.2}Ga{sub 0.8}As degraded after the high temperature annealing. From in-situ x-ray photoelectron spectra, the AsO{sub x}, which is not the oxidized state from the native oxide, but is an induced state from adsorption of trimethylaluminum and H{sub 2}O, was found at the ALD-Al{sub 2}O{sub 3}/In{sub 0.2}Ga{sub 0.8}As interface, while that was not detected at the ALD-HfO{sub 2}/In{sub 0.2}Ga{sub 0.8}As interface.

Chang, Y. H.; Chiang, T. H. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, C. A.; Liu, Y. T.; Lin, H. Y.; Huang, M. L.; Kwo, J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M. [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

2012-10-22T23:59:59.000Z

231

WA_00_008_PLUG_POWER_Waiver_of_Patent_Rights_in_Performance_...  

Broader source: Energy.gov (indexed) [DOE]

POWERWaiverofPatentRightsinPerformance.pdf More Documents & Publications WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99022AIRPRODUCTSANDCHEMICAL...

232

WA_99_012_AIR_PRODUCTS_Waiver_of_Patent_Rights_Under_AN_NVO_...  

Broader source: Energy.gov (indexed) [DOE]

2AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNV...

233

WA_1994_027_FORD_MOTOR_COMPANY_Waiver_of_Domestic_and_Foreig...  

Broader source: Energy.gov (indexed) [DOE]

2FORDMOTORCOMPANYWaiverofDomesticandForeig.pdf WA97038FORDMOTORCOMPANYWaiverofDomesticandForeign.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO...

234

WA_00_018_PRAXAIR_Waive_of_Domestic_and_Foreign_Invention_Ri...  

Broader source: Energy.gov (indexed) [DOE]

18PRAXAIRWaiveofDomesticandForeignInventionRi.pdf WA00018PRAXAIRWaiveofDomesticandForeignInventionRi.pdf WA00018PRAXAIRWaiveofDomesticandForeignInvention...

235

WA_02_046_QUESTA_AIR_TECHNOLOGIES_Waiver_of_Domestic_and_For...  

Broader source: Energy.gov (indexed) [DOE]

IRTECHNOLOGIESWaiverofDomesticandFor.pdf More Documents & Publications WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02021H2GENINNOVATIONSWaiverof...

236

WA_03_024_PRAXAIR_Waiver_of_Domestic_and_Foreign_Invention_R...  

Broader source: Energy.gov (indexed) [DOE]

24PRAXAIRWaiverofDomesticandForeignInventionR.pdf WA03024PRAXAIRWaiverofDomesticandForeignInventionR.pdf WA03024PRAXAIRWaiverofDomesticandForeignInventio...

237

WA_01_039_PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_Patent_...  

Broader source: Energy.gov (indexed) [DOE]

1039PRAXAIRINCWaiverofDomesticandForeignPatent.pdf WA01039PRAXAIRINCWaiverofDomesticandForeignPatent.pdf WA01039PRAXAIRINCWaiverofDomesticandForeignP...

238

WA_02_055_PRAXAIR_Waiver_of_Domestic_and_Foreign_Patent_Righ...  

Broader source: Energy.gov (indexed) [DOE]

2055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02055PRAXAIRWaiverofDomesticandForeignPaten...

239

WA_00_001_PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_Inventi...  

Broader source: Energy.gov (indexed) [DOE]

01PRAXAIRINCWaiverofDomesticandForeignInventi.pdf WA00001PRAXAIRINCWaiverofDomesticandForeignInventi.pdf WA00001PRAXAIRINCWaiverofDomesticandForeignInve...

240

WA_04_079_PRAXAIR_INC_Waiver_of_Patent_Rights_Under_a_Subcon...  

Broader source: Energy.gov (indexed) [DOE]

04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf WA04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf WA04079PRAXAIRINCWaiverofPatentRightsUndera...

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

WA_02_022_HONEYWELL_INC_Waiver_of_Domestic_and_Foreign_Inven...  

Broader source: Energy.gov (indexed) [DOE]

22HONEYWELLINCWaiverofDomesticandForeignInven.pdf WA02022HONEYWELLINCWaiverofDomesticandForeignInven.pdf WA02022HONEYWELLINCWaiverofDomesticandForeignIn...

242

WA_02_045_KENNAMETAL_INC_Waiver_of_Domestic_and_Foreign_Righ...  

Broader source: Energy.gov (indexed) [DOE]

LINCWaiverofDomesticandForeignRigh.pdf More Documents & Publications WA00011HONEYWELLINTERNATIONALWaiverofDomesticandFor.pdf WA01034INGERSOLL-RANDENERGYSYSTEMS...

243

WA_04_039_HONEYWELL_INTERNATIONAL_Waiver_of_Patent_Rights_Un...  

Broader source: Energy.gov (indexed) [DOE]

9HONEYWELLINTERNATIONALWaiverofPatentRightsUn.pdf WA04039HONEYWELLINTERNATIONALWaiverofPatentRightsUn.pdf WA04039HONEYWELLINTERNATIONALWaiverofPatentRights...

244

WA_04_007_OSHKOSH_TRUCK_CORP_Waiver_of_Patent_Rights_Under_N...  

Broader source: Energy.gov (indexed) [DOE]

WaiverofPatentRightsUnderN.pdf More Documents & Publications WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA04008GENERALMOTORSCORPWaiverofPatentRi...

245

WA_03_011_ROCKWELL_AUTOMATION_Waiver_of_Patent_Rights_Under_...  

Broader source: Energy.gov (indexed) [DOE]

3011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA03011ROCKWELLAUTOMATIONWaiverofPatentRights...

246

Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy  

SciTech Connect (OSTI)

The interfacial misfit (IMF) dislocation array of an epitaxial GaSb film on a Si substrate has been imaged with high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The mismatch strain accommodation through dislocation formation has been investigated using geometric phase analysis (GPA) on HAADF-STEM images with atomic resolution to probe the defects' local strain distribution. These measurements indicate that the lattice parameter of the epitaxial film recovers its bulk value within three unit cells from the interface due to the relaxation through IMF dislocations. The atomic number contrast of the HAADF-STEM images and energy dispersive x-ray spectrometry illustrate the formation of islands of AlSb buffer layer along the interface. The role of the AlSb buffer layer in facilitating the GaSb film growth on Si is further elucidated by investigating the strain field of the islands with the GPA.

Vajargah, S. Hosseini; Couillard, M.; Cui, K. [Department of Material Science and Engineering, McMaster University, 1280 Main St. W., Hamilton, Ontario L8S 4M1 (Canada); Tavakoli, S. Ghanad; Robinson, B.; Kleiman, R. N.; Preston, J. S. [Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Botton, G. A. [Department of Material Science and Engineering, McMaster University, 1280 Main St. W., Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)

2011-02-21T23:59:59.000Z

247

Isotopic Studies of Contaminant Transport at the Hanford Site, WA  

E-Print Network [OSTI]

MR-0132. Westinghouse Hanford Company, Richland WA. Bretz,in recharge at the Hanford Site. Northwest Science. 66:237-M.J. , ed. 2000. Hanford Site groundwater Monitoring

Christensen, J.N.; Conrad, M.E.; DePaolo, D.J.; Dresel, P.E.

2008-01-01T23:59:59.000Z

248

RAPID/Roadmap/18-WA-b | Open Energy Information  

Open Energy Info (EERE)

period in which the WSDE has to respond to the Demonstration of Compliance. 18-WA-b.17 - Conduct Public Meeting, if Requested If the public requests a public meeting on the...

249

Electrical conduction mechanism in La{sub 3}Ta{sub 0.5}Ga{sub 5.3}Al{sub 0.2}O{sub 14} single crystals  

SciTech Connect (OSTI)

The electrical conduction mechanism in La{sub 3}Ta{sub 0.5}Ga{sub 5.3}Al{sub 0.2}O{sub 14} (LTGA) single crystals was studied by nonstoichiometric defect formation during crystal growth. Since stoichiometric LTGA is not congruent, the single crystal grown from the stoichiometric melt was Ta-poor and Al-rich, where Al atoms were substituted not only in Ga sites but also in Ta sites. The population of the substitutional Al in Ta sites increased with increasing oxygen partial pressure during growth (growth-pO{sub 2}) in the range from 0.01 to 1?atm. Below 600?°C, substitutional Al atoms in Ta sites were ionized to yield holes, and thus the electrical conductivity of the LTGA crystal depended on temperature and the growth-pO{sub 2}. The dependence of the electrical conductivity on the growth-pO{sub 2} decreased as temperature increased. The temperature rise increases ionic conductivity, for which the dominant carriers are oxygen defects formed by the anion Frenkel reaction.

Yaokawa, Ritsuko, E-mail: e4777-1009@yahoo.co.jp; Aota, Katsumi [Citizen Holdings Co., Ltd., 840, Shimotomi, Tokorozawa, Saitama 359-8511 (Japan); Uda, Satoshi [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

2013-12-14T23:59:59.000Z

250

United States Patent [191 Jalali et al.  

E-Print Network [OSTI]

antennas: SPIE vol. 1703 (1992) 264-271. GA Magel et al.: "Phosphosilicate Glass waveguides for phased

Jalali. Bahram

251

Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer  

Science Journals Connector (OSTI)

A surface plasmon (SP)-enhanced nanoporous GaN-based green LED based on top-down processing technology has been successfully fabricated. This SP-enhanced LED consists of nanopores...

Yu, Zhi-Guo; Zhao, Li-Xia; Wei, Xue-Cheng; Sun, Xue-Jiao; An, Ping-Bo; Zhu, Shi-Chao; Liu, Lei; Tian, Li-Xin; Zhang, Feng; Lu, Hong-Xi; Wang, Jun-Xi; Zeng, Yi-Ping; Li, Jin-Min

2014-01-01T23:59:59.000Z

252

Structural and band alignment properties of Al{sub 2}O{sub 3} on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy  

SciTech Connect (OSTI)

Structural and band alignment properties of atomic layer Al{sub 2}O{sub 3} oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al{sub 2}O{sub 3} film and the Ge epilayer. The extracted valence band offset, {Delta}E{sub v}, values of Al{sub 2}O{sub 3} relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in {Delta}E{sub v} related to the crystallographic orientation were {Delta}E{sub V}(110)Ge>{Delta}E{sub V}(100)Ge{>=}{Delta}E{sub V}(111)Ge and the conduction band offset, {Delta}E{sub c}, related to the crystallographic orientation was {Delta}E{sub c}(111)Ge>{Delta}E{sub c}(110)Ge>{Delta}E{sub c}(100)Ge using the measured {Delta}E{sub v}, bandgap of Al{sub 2}O{sub 3} in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design.

Hudait, M. K.; Zhu, Y. [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Patra, P. K. [Department of Biomedical Engineering and Department of Mechanical Engineering, University of Bridgeport, Bridgeport, Connecticut 06604 (United States); Ma, A. W. K. [Department of Chemical and Biomolecular Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269 (United States); Aphale, A.; Macwan, I. [Department of Electrical and Computer Engineering, University of Bridgeport, Bridgeport, Connecticut 06604 (United States)

2013-04-07T23:59:59.000Z

253

Origin of improved scintillation efficiency in (Lu,Gd){sub 3}(Ga,Al){sub 5}O{sub 12}:Ce multicomponent garnets: An X-ray absorption near edge spectroscopy study  

SciTech Connect (OSTI)

In the recent successful improvement of scintillation efficiency in Lu{sub 3}Al{sub 5}O{sub 12}:Ce driven by Ga{sup 3+} and Gd{sup 3+} admixture, the “band-gap engineering” and energy level positioning have been considered the valid strategies so far. This study revealed that this improvement was also associated with the cerium valence instability along with the changes of chemical composition. By utilizing X-ray absorption near edge spectroscopy technique, tuning the Ce{sup 3+}/Ce{sup 4+} ratio by Ga{sup 3+} admixture was evidenced, while it was kept nearly stable with the Gd{sup 3+} admixture. Ce valence instability and Ce{sup 3+}/Ce{sup 4+} ratio in multicomponent garnets can be driven by the energy separation between 4f ground state of Ce{sup 3+} and Fermi level.

Wu, Yuntao, E-mail: caswyt@hotmail.com; Luo, Jialiang; Ren, Guohao [Shanghai Institute of Ceramics, Chinese Academy of Sciences, No.215 Road, Jiading, Shanghai 201899 (China); Nikl, Martin [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 16253 Prague 6 (Czech Republic)

2014-01-01T23:59:59.000Z

254

621.315.592 AlXGa1-XN  

E-Print Network [OSTI]

, : Si = (I2 ./f ) oAA/ , A0 ­ , A ­ , ­ 1, f ­ . 9. AlxGa1-xN AlN/AlGaN CF4/Ar 0x1. , AlxGa1-xN AlN/AlGaN CF4/Ar 0x1. , : 1. AlxGa1-xN 20÷26 0,56,25 . 5. AlxGa1-xN CF4/Ar ( ) / ( ) CF4/Ar = 20/4 sccm, =300, =150 = 10 . 6. AlN/Al0

Titov, Anatoly

255

Infrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a  

E-Print Network [OSTI]

GaP single QW surrounded by AlGaInP waveguide WG and cladding layers, whereas the NIR laser incorporates a GaInfrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a Robert in GaAs-based broad-area laser diodes. Spectrally and spatially resolved scanning optical microscopy

Peinke, Joachim

256

ErAs:,,InGaAs...1-x,,InAlAs...x alloy power generator modules Gehong Zeng,a  

E-Print Network [OSTI]

p-type ErAs:InGaAs alloy thermoelectric elements. The thermoelectric properties of the materials power and efficiency of a thermoelectric generator module depend largely on the material. Thermoelectric properties can be improved by introducing nanometer scale structure into materials.2 In this way

Bowers, John

257

Deep analysis of Selective area growth InGaAlAs SAG MQWs structures using micro beam high resolution X-ray diffraction and micro photoluminescence  

E-Print Network [OSTI]

to the traditional InGaAsP/InP for these specific applications is due to its larger conduction-band gap offset-speed 40 Gb/s electro-absorption modulators. The superiority of this material system compared

Sirenko, Andrei

258

Gaseous Detonation-Driven Fracture of Tubes Tong Wa Chao  

E-Print Network [OSTI]

Gaseous Detonation-Driven Fracture of Tubes Thesis by Tong Wa Chao In Partial Fulfillment An experimental investigation of fracture response of aluminum 6061-T6 tubes under internal gaseous detonation on the detonation velocity, strain history, blast pressure from the crack opening, and crack speeds. The curved

259

EIS-0397: Lyle Falls Fish Passage Project, WA  

Broader source: Energy.gov [DOE]

This EIS analyzes BPA's decision to modify funding to the existing Lyle Falls Fishway on the lower Klickitat River in Klickitat County, WA. The proposed project would help BPA meet its off-site mitigation responsibilities for anadromous fish affected by the development of the Federal Columbia River Power System and increase overall fish production in the Columbia Basin.

260

DOE - Office of Legacy Management -- University of Washington - WA 0-01  

Office of Legacy Management (LM)

Washington - WA 0-01 Washington - WA 0-01 FUSRAP Considered Sites Site: UNIVERSITY OF WASHINGTON (WA.0-01) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Seattle , Washington WA.0-01-1 Evaluation Year: 1987 WA.0-01-1 Site Operations: Research activities involving small quantities of radioactive materials in a controlled environment. WA.0-01-1 Site Disposition: Eliminated - Potential for residual radioactive contamination considered remote - Operating under active NRC license WA.0-01-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: None Indicated WA.0-01-1 Radiological Survey(s): None Indicated Site Status: Eliminated from further consideration under FUSRAP Also see

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

File:INL-geothermal-wa.pdf | Open Energy Information  

Open Energy Info (EERE)

wa.pdf wa.pdf Jump to: navigation, search File File history File usage Washington Geothermal Resources Size of this preview: 699 × 600 pixels. Full resolution ‎(4,835 × 4,147 pixels, file size: 3.28 MB, MIME type: application/pdf) Description Washington Geothermal Resources Sources Idaho National Laboratory Authors Patrick Laney; Julie Brizzee Related Technologies Geothermal Creation Date 2003-11-01 Extent State Countries United States UN Region Northern America States Washington File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 12:45, 16 December 2010 Thumbnail for version as of 12:45, 16 December 2010 4,835 × 4,147 (3.28 MB) MapBot (Talk | contribs) Automated upload from NREL's "mapsearch" data

262

GRR/Section 15-WA-a - Air Quality Notice of Construction Permit | Open  

Open Energy Info (EERE)

5-WA-a - Air Quality Notice of Construction Permit 5-WA-a - Air Quality Notice of Construction Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 15-WA-a - Air Quality Notice of Construction Permit 15-WA-a - Air Quality Notice of Construction Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies WAC 173-400-110 WAC 173-400-111 WAC 173-400-171 Triggers None specified This flowchart illustrates the process for obtaining an Air Quality Notice of Construction Permit. The Washington State Department of Ecology (WSDE) oversees the permitting process under WAC 173-400. 15-WA-a - Air Quality Notice of Construction Permit.pdf 15-WA-a - Air Quality Notice of Construction Permit.pdf 15-WA-a - Air Quality Notice of Construction Permit.pdf

263

Observation of strontium segregation in LaAlO{sub 3}/SrTiO{sub 3} and NdGaO{sub 3}/SrTiO{sub 3} oxide heterostructures by X-ray photoemission spectroscopy  

SciTech Connect (OSTI)

LaAlO{sub 3} and NdGaO{sub 3} thin films of different thicknesses have been grown by pulsed laser deposition on TiO{sub 2}-terminated SrTiO{sub 3} single crystals and investigated by soft X-ray photoemission spectroscopy. The surface sensitivity of the measurements has been tuned by varying photon energy h? and emission angle ?. In contrast to the core levels of the other elements, the Sr 3d line shows an unexpected splitting for higher surface sensitivity, signaling the presence of a second strontium component. From our quantitative analysis we conclude that during the growth process Sr atoms diffuse away from the substrate and segregate at the surface of the heterostructure, possibly forming strontium oxide.

Treske, Uwe; Heming, Nadine; Knupfer, Martin; Büchner, Bernd; Koitzsch, Andreas, E-mail: a.koitzsch@ifw-dresden.de [Institute for Solid State Research, IFW-Dresden, P.O. Box 270116, DE-01171 Dresden (Germany); Di Gennaro, Emiliano; Scotti di Uccio, Umberto; Miletto Granozio, Fabio [CNR-SPIN and Dipartimento di Fisica, Complesso Universitario di Monte S. Angelo, Via Cintia, 80126 Naples (Italy); Krause, Stefan [Helmholtz-Zentrum Berlin, BESSY, Albert-Einstein-Str. 15, 12489 Berlin (Germany)

2014-01-01T23:59:59.000Z

264

TOF SIMS induced artificial topographical effects on the Y2(Al,Ga)5O12:Tb3+ thin films deposited on Si substrates by the pulsed laser deposition technique  

Science Journals Connector (OSTI)

Abstract The presence of various types of particles on the surface of the pulsed laser deposited (PLD) thin films as well as the differences in the film structure, played an important role to induce artificial topographical effects on Y3(Al,Ga)5O12:Tb3+ PLD thin films deposited on Si substrates measured by time-of-flight secondary ion mass spectroscopy (TOF-SIMS). The two and three-dimensional (2D and 3D) images have been recorded in the positive ion mode. Analysis of the 3D images shows big agglomerated particles on the surface of the Si substrate that appears to be embedded in the substrate and the substrate appears to be on the same level as the particles. This phenomenon is due to the artificial topographic effects which are attributed to the experimental setup of the TOF-SIMS system.

A. Yousif; R.M. Jafer; J.J. Terblans; O.M. Ntwaeaborwa; M.M. Duvenhage; Vinod Kumar; H.C. Swart

2014-01-01T23:59:59.000Z

265

Critical size for the generation of misfit dislocations and their effects on electronic properties in GaAs nanosheets on Si substrate  

E-Print Network [OSTI]

-Queisser limit6 for the solar-cell efficiency. Recently, NWs of various semi- conductors such as GaAs/AlGaAs,7

Southern California, University of

266

Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interface Self-cleaning by Atomic Layer Deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As  

SciTech Connect (OSTI)

The Synchrotron Radiation Photoemission Spectroscopic (SRPES) study was conducted to (a) investigate the surface chemistry of In{sub 0.53}Ga{sub 0.47}As and In{sub 0.52}Al{sub 0.48}As post chemical and thermal treatments, (b) construct band diagram and (c) investigate the interface property of HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As and HfO{sub 2}/In{sub 0.52}Al{sub 0.48}As. Dilute HCl and HF etch remove native oxides on In{sub 0.53}Ga{sub 0.47}As and In{sub 0.52}Al{sub 0.47}As, whereas in-situ vacuum annealing removes surface arsenic pile-up. After the atomic layer deposition of HfO{sub 2}, native oxides were considerably reduced compared to that in as-received epi-layers, strongly suggesting the self-clean mechanism. Valence and conduction band offsets are measured to be 3.37 {+-} 0.1eV, 1.80 {+-} 0.3eV for In{sub 0.53}Ga{sub 0.47}As and 3.00 {+-} 0.1eV, 1.47 {+-} 0.3eV for In{sub 0.52}Al{sub 0.47}As, respectively.

Kobayashi, Masaharu; /SLAC, SSRL; Chen, P.T.; Sun, Y.; Goel, N.; Majhi, P.; Garner, M; Tsai, W.; Pianetta, P.; Nishi, Y.; /SLAC, SSRL

2008-10-31T23:59:59.000Z

267

We describe the characteristics and application of a 265nm AlGaN light-emitting diode (LED) operated at 1 MHz repetition rate, 1.2 ns pulse duration, 1.32 W average power, 2.3 mW peak  

E-Print Network [OSTI]

We describe the characteristics and application of a 265nm AlGaN light-emitting diode (LEDnm bandwidth. The LED enables the fluorescence decay of weakly emitting phenylalanine to be measured and resonance energy transfer from phenylalanine to tyrosine and tryptophan, the convenience of the 265nm LED

Strathclyde, University of

268

GRR/Section 9-WA-b - State Environmental Review | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 9-WA-b - State Environmental Review GRR/Section 9-WA-b - State Environmental Review < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 9-WA-b - State Environmental Review 9-WA-b - State Environmental Review.pdf Click to View Fullscreen Triggers None specified Once the lead agency is determined they are responsible for continuing forward with environmental review. In Washington, environmental review is effectuated through the developer completing an Environmental Checklist which assists the lead agency in determining whether the proposal will likely result in negative impacts on the environment. 9-WA-b - State Environmental Review.pdf 9-WA-b - State Environmental Review.pdf Error creating thumbnail: Page number not in range.

269

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

270

GRR/Section 12-WA-a - Live Wildlife Taking Permit | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 12-WA-a - Live Wildlife Taking Permit GRR/Section 12-WA-a - Live Wildlife Taking Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 12-WA-a - Live Wildlife Taking Permit 12-WA-a - Live Wildlife Taking Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Fish and Wildlife Regulations & Policies WAC 232-12-064 Triggers None specified In Washington, it is unlawful to take wildlife from the wild without permission from the Washington State Department of Fish and Wildlife (WDFW). The WDFW issues Live Wildlife Taking Permits under WAC 232-12-064. 12-WA-a - Live Wildlife Taking Permit.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range.

271

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project  

Broader source: Energy.gov (indexed) [DOE]

73: W.A. Parish Post-Combustion CO2 Capture and Sequestration 73: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX SUMMARY This EIS evaluates the environmental impacts of a proposal to provide financial assistance for a project proposed by NRG Energy, Inc (NRG). DOE selected NRG's proposed W.A. Parish Post-Combustion CO2 Capture and Sequestration Project for a financial assistance award through a competitive process under the Clean Coal Power Initiative Program. NRG would design, construct and operate a commercial-scale carbon dioxide (CO2) capture facility at its existing W.A. Parish Generating Station in Fort Bend County, Texas; deliver the CO2 via a new pipeline to the existing West Ranch oil field in Jackson

272

Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) | Department  

Broader source: Energy.gov (indexed) [DOE]

Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) June 12, 2013 DOE referred the matter of Fisher & Paykel Appliances residential clothes washer, model WA42T26GW1, to the U.S. Environmental Protection Agency, brand manager for the ENERGY STAR Program, for appropriate action after DOE testing showed that the model does not meet the ENERGY STAR specification. Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) More Documents & Publications Regulatory Burden RFI DOE response to questions from AHAM on the supplemental proposed test procedure for residential clothes washers Scoping Study to Evaluate Feasibility of National Databases for EM&V Documents and Measure Savings: Appendices

273

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project  

Broader source: Energy.gov (indexed) [DOE]

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX SUMMARY This EIS evaluates the environmental impacts of a proposal to provide financial assistance for a project proposed by NRG Energy, Inc (NRG). DOE selected NRG's proposed W.A. Parish Post-Combustion CO2 Capture and Sequestration Project for a financial assistance award through a competitive process under the Clean Coal Power Initiative Program. NRG would design, construct and operate a commercial-scale carbon dioxide (CO2) capture facility at its existing W.A. Parish Generating Station in Fort Bend County, Texas; deliver the CO2 via a new pipeline to the existing West Ranch oil field in Jackson

274

GRR/Section 3-WA-b - Land Access Overview | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-b - Land Access Overview GRR/Section 3-WA-b - Land Access Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-b - Land Access Overview 3-WA-b - Land Access Overview.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Triggers None specified Any developer that needs access to or through state lands must obtain the appropriate permit or lease. The developer will obtain such permit or lease through the Washington State Department of Natural Resources. 3-WA-b - Land Access Overview.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative

275

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network [OSTI]

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

276

Electric field engineering in GaN high electron mobility transistors  

E-Print Network [OSTI]

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

277

InAs quantum wire induced composition modulation in an In{sub 0.53}Ga{sub 0.37}Al{sub 0.10}As barrier layer grown on an InP substrate  

SciTech Connect (OSTI)

Composition modulations are observed by transmission electron microscopy in In{sub 0.53}Ga{sub 0.37}Al{sub 0.10}As barrier layers that overgrow both single- and multilayer InAs quantum wire structures grown on an InP substrate. Indium-rich (gallium-deficient) regions were observed in the region of the barrier layer lying directly above individual quantum wires, while indium-deficient (gallium-rich) regions were detected in the barrier above the gaps between adjacent underlying quantum wires. The magnitude of such modulation was typically 7% (atomic percent) for both indium and gallium as estimated from the energy dispersive x-ray analysis. The origin of such composition modulations was determined by modeling the chemical potential distribution for indium and gallium on the growth front of the barrier layer at the initial capping stage of the quantum wires with finite element simulations. It is found that the number and positions of the indium-rich regions are determined by the combined effects of strain and surface energy distributions on the barrier material capping the quantum wires. Moreover the estimated magnitudes of the composition modulation for both indium and gallium from the finite element models are in good agreement with the experimental observations. This method provides a simple way to understand the origin of, and to estimate the magnitude of the quantum wire-induced composition modulation in the barrier layer.

Cui, K. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Robinson, B. J. [Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Thompson, D. A. [Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2010-08-15T23:59:59.000Z

278

Microbial community changes during sustained Cr(VI) reduction at the 100H site in Hanford, WA  

E-Print Network [OSTI]

at the 100H site in Hanford, WA Romy Chakraborty 1 , Eoin Lcontaminated aquifer at the Hanford (WA) 100H site in 2004.Cr(VI) reduction at Hanford, and a comparison of the

Chakraborty, Romy

2010-01-01T23:59:59.000Z

279

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

280

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy  

Science Journals Connector (OSTI)

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular- ... (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as ... back surface field la...

Shulong Lu; Lian Ji; Wei He; Pan Dai; Hui Yang…

2011-10-01T23:59:59.000Z

282

Kohlenstoffhaltige ternäre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternären Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner dürften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

283

EIS-0467: Hanford Site Natural Gas Pipeline, Richland, WA | Department of  

Broader source: Energy.gov (indexed) [DOE]

7: Hanford Site Natural Gas Pipeline, Richland, WA 7: Hanford Site Natural Gas Pipeline, Richland, WA EIS-0467: Hanford Site Natural Gas Pipeline, Richland, WA Summary This EIS will evaluate the environmental impacts of a proposal to enter into a contract with a licensed natural gas supplier in Washington State to construct, operate, and maintain a natural gas pipeline. The pipeline would deliver natural gas to support the Waste Treatment Plant and the 242-A Evaporator operations in the 200 East Area of the Hanford Site. Public Comment Opportunities None available at this time. For more information, contact: Mr. Douglas Chapin, NEPA Document Manager U.S. Department of Energy Richland Operations Office P.O. Box 550, MSIN A5-11 Richland, WA 99352 Documents Available for Download January 23, 2012 EIS-0467: Notice of Intent to Prepare an Environmental Impact Statement and

284

GRR/Section 9-WA-c - State Environmental Impact Statement | Open Energy  

Open Energy Info (EERE)

GRR/Section 9-WA-c - State Environmental Impact Statement GRR/Section 9-WA-c - State Environmental Impact Statement < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 9-WA-c - State Environmental Impact Statement 9-WA-c - State Environmental Impact Statement.pdf Click to View Fullscreen Triggers None specified The primary purpose of an Environmental Impact Statement (EIS) is to ensure that the Washington State Environmental Policy Act (SEPA) policies are an integral part of the ongoing programs and actions of state and local government. An EIS must provide impartial discussion of significant environmental impacts and must inform decision makers and the public of reasonable alternatives, including mitigation measures that would avoid or minimize adverse impacts or enhance environmental quality. WAC 197-11-400.

285

GRR/Section 19-WA-f - Water Well NOI for Replacement or Additional Wells |  

Open Energy Info (EERE)

GRR/Section 19-WA-f - Water Well NOI for Replacement or Additional Wells GRR/Section 19-WA-f - Water Well NOI for Replacement or Additional Wells < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-f - Water Well NOI for Replacement or Additional Wells 19-WA-f - Water Well NOI for Replacement or Additional Wells.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington 90.44.100 Revised Code of Washington 18.104.048 Washington Administrative Code 173-160-151 Triggers None specified A developer seeking to use ground water for an activity may need to drill a new well in a different location than a previous well, drill an additional well at an existing location, or drill a replacement well at the same

286

GRR/Section 11-WA-a - State Cultural Considerations Overview | Open Energy  

Open Energy Info (EERE)

GRR/Section 11-WA-a - State Cultural Considerations Overview GRR/Section 11-WA-a - State Cultural Considerations Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-WA-a - State Cultural Considerations Overview 11-WA-a - State Cultural Considerations Overview.pdf Click to View Fullscreen Triggers None specified The developer will be required to comply with Washington state law when human remains or other cultural resources are discovered on a project site. Cultural resources include both historic and archaeological resources and sites. The discovery of cultural resources may require obtaining a permit and providing public notice and notice to Indian Tribes. Once the necessary procedures have been followed, the developer may continue with the project.

287

GRR/Section 14-WA-c - Underground Injection Control Permit | Open Energy  

Open Energy Info (EERE)

GRR/Section 14-WA-c - Underground Injection Control Permit GRR/Section 14-WA-c - Underground Injection Control Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-WA-c - Underground Injection Control Permit 14-WA-c - Underground Injection Control Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Chapter 173-218 WAC Non-endangerment Standard Triggers None specified The Safe Drinking Water Act requires Washington to implement technical criteria and standards to protect underground sources of drinking water from contamination. Under Chapter 173-218 WAC, the Washington State Department of Ecology (WSDE) regulates and permits underground injection control (UIC) wells in Washington. The Environmental Protection Agency

288

GRR/Section 18-WA-a - Underground Storage Tank Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 18-WA-a - Underground Storage Tank Process GRR/Section 18-WA-a - Underground Storage Tank Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 18-WA-a - Underground Storage Tank Process 18-WA-a - Underground Storage Tank Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.76 Washington Administrative Code Chapter 173-360 Triggers None specified Washington has a federally-approved state Underground Storage Tank (UST) program regulated by the Washington State Department of Ecology (WSDE) under Revised Code of Washington Chapter 90.76 and Washington Administrative Code Chapter 173-360. Washington defines an "Underground

289

GRR/Section 5-WA-a - Drilling and Well Development | Open Energy  

Open Energy Info (EERE)

GRR/Section 5-WA-a - Drilling and Well Development GRR/Section 5-WA-a - Drilling and Well Development < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 5-WA-a - Drilling and Well Development 5-WA-a.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies Geothermal Act 78.60 RCW Geothermal Rules 332-17 WAC Triggers None specified In Washington geothermal drilling and well development are regulated by the Washington State Department of Natural Resources (WSDNR). Geothermal production wells and core holes deeper than 750ft require the developer go through the whole WSDNR permitting process (which requires a public hearing) and require that the developer complete the State Environmental

290

GRR/Section 3-WA-e - State Right of Way Process | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-e - State Right of Way Process GRR/Section 3-WA-e - State Right of Way Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-e - State Right of Way Process 3-WA-e - State Right of Way Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies RCW 79-36-350 RCW 79-36-520 RCW 79-36-530 Triggers None specified This flowchart illustrates the process for obtaining a right of way over state lands in Washington. The right of way process is overseen by the Washington State Department of Natural Resources (WSDNR). The right of way process is regulated under Revised Code of Washington (RCW) 79-36-350. The developer may apply for an easement, permit or license for a right of

291

GRR/Section 14-WA-d - Section 401 Water Quality Certification | Open Energy  

Open Energy Info (EERE)

GRR/Section 14-WA-d - Section 401 Water Quality Certification GRR/Section 14-WA-d - Section 401 Water Quality Certification < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-WA-d - Section 401 Water Quality Certification 14-WA-d - 401 Water Quality Certification.pdf Click to View Fullscreen Contact Agencies U S Army Corps of Engineers Washington State Department of Ecology Regulations & Policies Revised Statute of Washington Chapter 90.48 Washington Administrative Code Chapter 173-201A Washington Administrative Code 173-225-030 Triggers None specified Developers requiring a Section 404 Dredge and Fill Permit from the U S Army Corps of Engineers (Corps) are required to obtain a Section 401 Water Quality Certification from the state of Washington. The Washington State

292

GRR/Section 19-WA-d - Water Conservancy Board Transfer or Change of Water  

Open Energy Info (EERE)

19-WA-d - Water Conservancy Board Transfer or Change of Water 19-WA-d - Water Conservancy Board Transfer or Change of Water Right < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-d - Water Conservancy Board Transfer or Change of Water Right 19-WA-d - Water Conservancy Board Transfer or Change of Water Right.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.80 RCW 90.03.380 90.03.390 RCW 90.44.100 Triggers None specified In 1997, the Washington Legislature authorized the creation of water conservancy boards through the enactment of Revised Code of Washington Chapter 90.80 to expedite the administrative process for voluntary water right transfers within individual counties. In counties where a water

293

GRR/Section 19-WA-e - Water Well Notice of Intent for New Well | Open  

Open Energy Info (EERE)

GRR/Section 19-WA-e - Water Well Notice of Intent for New Well GRR/Section 19-WA-e - Water Well Notice of Intent for New Well < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-e - Water Well Notice of Intent for New Well 19-WA-e - Water Well Notice of Intent for New Well.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington 18.104.048 Washington Administrative Code 173-160-151 Triggers None specified A developer seeking to use ground water for an activity may need to drill a new well to access the ground water. When a developer needs to drill a new well, the developer must complete the Notice of Intent (NOI) to Drill a Well form and submit the form to the Washington State Department of Ecology

294

GRR/Section 14-WA-b - State NPDES Permitting Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 14-WA-b - State NPDES Permitting Process GRR/Section 14-WA-b - State NPDES Permitting Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-WA-b - State NPDES Permitting Process 14-WA-b - State NPDES Permitting Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology United States Environmental Protection Agency Regulations & Policies Clean Water Act Chapter 90.48 RCW Chapter 173-216 WAC Triggers None specified Section 402 of the Clean Water Act (CWA) required the Environmental Protection Agency (EPA) to establish the National Pollutant Discharge Elimination System (NPDES) to regulate discharge of pollutants from point sources. In Washington, the EPA has delegated responsibility of NPDES to

295

GRR/Section 4-WA-a - State Exploration Process | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 4-WA-a - State Exploration Process GRR/Section 4-WA-a - State Exploration Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 4-WA-a - State Exploration Process 4-WA-a State Exploration Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies Geothermal Act 78.60 RCW Geothermal Rules 332-17 WAC Triggers None specified Geothermal exploration in Washington requires a Geothermal Exploration Permit from the Washington State Department of Natural Resources (WSDNR) for invasive exploration or drilling. Operations that require an exploration or drilling permit will also require the developer to initiate the State Environmental Policy Act (SEPA). In Washington geothermal resources are regulated under Chapter 78.60 RCW

296

GRR/Section 3-WA-d - State Land Lease | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-d - State Land Lease GRR/Section 3-WA-d - State Land Lease < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-d - State Land Lease 3-WA-d - State Land Lease.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies RCW 79-13-020 RCW 79-13-140 RCW 79-13-150 WAC 332-22-030 WAC 332-22-105 WAC 332-22-110 Triggers None specified This flowchart illustrates the process used to lease state lands in Washington. The Washington State Department of Natural Resources (WSDNR) oversees the land leasing process through the Commissioner of Public Lands ("commissioner"). The WSDNR may lease state lands for purposes it deems advisable, including commercial, industrial, residential, agricultural, and

297

GRR/Section 3-WA-c - Utility Franchise or Permit Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 3-WA-c - Utility Franchise or Permit Process GRR/Section 3-WA-c - Utility Franchise or Permit Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-c - Utility Franchise or Permit Process 3-WA-c - Utility Franchise or Permit Process (1).pdf Click to View Fullscreen Contact Agencies Washington State Department of Transportation Regulations & Policies WAC 468-34-060 WAC 468-34-080 WAC 468-34-110 WAC 468-34-160 WAC 468-34-170 Triggers None specified This flowchart illustrates the process of obtaining a franchise or permit through a state highway right of way in Washington State. A utility permit or franchise is required for occupancy of a highway right of way by utility facilities, including private lines. WAC 468-34-160. The process is

298

GRR/Section 19-WA-b - New Water Right Permit Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 19-WA-b - New Water Right Permit Process GRR/Section 19-WA-b - New Water Right Permit Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-b - New Water Right Permit Process 19-WA-b - New Water Right Permit Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.03 Revised Code of Washington Chapter 90.44 Triggers None specified Washington uses a prior appropriation system for the distribution of both surface water and ground water rights in which water users receive the right to use water on a "first in time, first in right" basis. Under Washington law, the waters of Washington belong collectively to the public

299

GRR/Section 19-WA-c - Transfer or Change of Water Right | Open Energy  

Open Energy Info (EERE)

9-WA-c - Transfer or Change of Water Right 9-WA-c - Transfer or Change of Water Right < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-c - Transfer or Change of Water Right 19-WA-c - Transfer or Change of Water Right.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington 90.03.380 Revised Code of Washington 90.44.100 Revised Code of Washington Chapter 90.80 Triggers None specified Much of Washington's public waters have been accounted for through water right claims, permits, or certificates. As a result, many individuals seeking water rights try to acquire existing water rights already in use or change the use of a current water right they already hold. Certain elements

300

NEURAL NETWORKS FOR DISCRETE TOMOGRAPHY K.J. Batenburg a W.A. Kosters b  

E-Print Network [OSTI]

NEURAL NETWORKS FOR DISCRETE TOMOGRAPHY K.J. Batenburg a W.A. Kosters b a Mathematical Institute of crystalline solids at atomic resolution from electron microscopic images can be considered the ``holy grail

Kosters, Walter

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
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301

DOE Zero Energy Ready Home Case Study: TC Legend Homes, Bellingham, WA  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready home in Bellingham, WA, that achieves HERS 43 without PV or HERS 13 with 3.2 kW of PV.

302

GRR/Section 3-WA-a - State Geothermal Lease | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-a - State Geothermal Lease GRR/Section 3-WA-a - State Geothermal Lease < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-a - State Geothermal Lease 3-WA-a State Geothermal Lease.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies Chapter 79.14 RCW Chapter 344-12 WAC Triggers None specified The State of Washington is still in the process of developing and finalizing the rules and regulations related to geothermal leases on state lands; however, the Washington State Department of Natural Resources (WSDNR) expects the process to be similar to the process for leasing state lands for oil and natural gas development. The rules and regulations for

303

GRR/Section 11-WA-c - Archaeological Resource Discovery Process | Open  

Open Energy Info (EERE)

GRR/Section 11-WA-c - Archaeological Resource Discovery Process GRR/Section 11-WA-c - Archaeological Resource Discovery Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-WA-c - Archaeological Resource Discovery Process 11-WA-c - Archaeological Resource Discovery Process.pdf Click to View Fullscreen Triggers None specified In the state of Washington, cultural resource concerns are integrated as early as possible into the planning for capital projects and are protected if discovered during construction. Washington defines "Cultural resources" as archeological and historical sites and artifacts, and traditional areas or items of religious, ceremonial and social uses to affected tribes. Washington defines an "Archaeological resource" as any

304

GRR/Section 19-WA-a - Water Access and Water Rights Overview | Open Energy  

Open Energy Info (EERE)

9-WA-a - Water Access and Water Rights Overview 9-WA-a - Water Access and Water Rights Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-a - Water Access and Water Rights Overview 19-WA-a - Water Access and Water Rights Overview.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.03 Revised Code of Washington Chapter 90.44 RCW 90.44.050 Triggers None specified Similar to many western states, only a small amount of water is available for appropriation in Washington. As a result, Washington has developed a comprehensive regulatory scheme for the distribution of water rights and use of water in the state. Washington employs a prior appropriation or

305

Advance Patent Waiver W(A)2005-032  

Broader source: Energy.gov [DOE]

This is a request by HONEYWELL INTERNATIONAL, INC for a DOE waiver of domestic and foreign patent rights under agreement DE-FC36-02AL67624.

306

Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics  

SciTech Connect (OSTI)

We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.

Chu, L. K. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Merckling, C.; Dekoster, J.; Caymax, M. [Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium); Alian, A.; Heyns, M. [Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium); Kwo, J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China); Hong, M. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

2011-07-25T23:59:59.000Z

307

Al composition dependency of interface phonon in the wurtzite quantum cascade laser  

Science Journals Connector (OSTI)

The interface (IF) phonons of the wurtzite quantum cascade lasers (QCL) are investigated using the transfer-...0.2Ga0.8N/GaN and Al0.15Ga0.85N/GaN QCLs, and two IF modes can be changed into other modes if their w...

Gui-chu Chen ???; Guang-han Fan ???

2010-05-01T23:59:59.000Z

308

IEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array  

E-Print Network [OSTI]

2.3-m laser. Al Ga As Sb cladding layers. Details of the lasers' heterostructure design can be foundIEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array L. Shterengas, G--High-power 2.3- m In(Al)GaAsSb­GaSb type-I double quantum-well diode laser arrays were fabricated

309

Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells.  

E-Print Network [OSTI]

??Thema dieser Arbeit ist die Synthese von Wurtzit M-plane (In,Ga)N(1-100)-Heterostrukturen auf g-LiAlO2(100) mittels plasmaunterstützter Molekularstrahlepitaxie (MBE). Der Einfluß der Wachstumsbedingungen auf die strukturellen, morphologischen, und… (more)

Sun, Yue-Jun

2004-01-01T23:59:59.000Z

310

GRR/Section 15-WA-b - Air Operating Permit | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » GRR/Section 15-WA-b - Air Operating Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 15-WA-b - Air Operating Permit 15-WA-b - Air Operating Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies WAC 173-401-500 WAC 173-401-800 WAC 173-401-810 WAC 173-401-735 WAC 173-401-610 Triggers None specified This flowchart illustrates the process for obtaining an Air Operating Permit in Washington State. The Washington State Department of Ecology (WSDE) issues Air Operating Permit under WAC 173-401. An Air Operating Permit is required if a facility has the potential to emit

311

GRR/Section 9-WA-a - State Environmental Overview | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » GRR/Section 9-WA-a - State Environmental Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 9-WA-a - State Environmental Overview 9-WA-a - State Environmental Overview.pdf Click to View Fullscreen Triggers None specified The Washington State Environmental Policy Act (SEPA), chapter 43.21 RCW, requires all governmental agencies to consider the environmental impacts of a proposal before making decisions. Washington uses an Environmental Checklist and Environmental Review (ER) to provide information to help government agencies identify impacts from their proposals and determine whether an Environmental Impact Statement (EIS) is necessary.

312

MEMORANDUM : APPROVAL TO MODIFY ADVANCE WAIVER OF PATENT RIGHTS W(A)  

Broader source: Energy.gov (indexed) [DOE]

: APPROVAL TO MODIFY ADVANCE WAIVER OF PATENT RIGHTS W(A) : APPROVAL TO MODIFY ADVANCE WAIVER OF PATENT RIGHTS W(A) 2009-047 GRANTED FOR US SOLAR HOLDINGS LLC UNDER AGREEMENT NO. DE-FC36-08G018 155 US Solar Holdings LLC ("US Solar") has requested that the Department of Energy ("DOE") modify or clarify the cost share requirements set forth in the statement of considerations for the granted advance patent waiver W(A) 2009-047. Specifically, the statement of considerations, as originally granted, states the following: The total cost of the award is approximately $4 million with the Petitioner providing about 50% cost sharing. This waiver is contingent upon the Petitioner maintaining, in aggregate, the above cost sharing percentage over the course of the agreement. Rather than just provide an aggregate cost share requirement of 50% for the agreement, US Solar

313

GRR/Section 7-WA-a - Energy Facility Siting Process | Open Energy  

Open Energy Info (EERE)

form form View source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon » GRR/Section 7-WA-a - Energy Facility Siting Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 7-WA-a - Energy Facility Siting Process 7-WA-a - Energy Facility Siting Process (1).pdf Click to View Fullscreen Contact Agencies Washington State Energy Facility Site Evaluation Council Regulations & Policies RCW 80.50.60(1) WAC 463-60 RCW 80.50.090(2) WAC 463-30-270 WAC 463-30-320 Triggers None specified Under RCW 80.50.60(1) a developer may not begin construction of a new energy facility site until they obtain Energy Facility Siting certification

314

GRR/Section 11-WA-b - Human Remains Process | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » GRR/Section 11-WA-b - Human Remains Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-WA-b - Human Remains Process 11-WA-b - Human Remains Process (1).pdf Click to View Fullscreen Triggers None specified This flowchart illustrates the necessary procedure when a developer discovers human remains on a project site. In Washington, every person has the duty to notify the coroner upon the discovery of any human remains in the most expeditious manner possible. The Washington Department of Archaeology and Historic Preservation (DAHP) handles the disposition of non-forensic remains, while the county coroner handles the disposition of

315

EA-1949: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA | Department  

Broader source: Energy.gov (indexed) [DOE]

49: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA 49: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA EA-1949: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA SUMMARY This EA analyzes the potential environmental effects of a proposal by the Public Utility District No. 1 of Snowhomish County, Washington to construct and operate the Admiralty Inlet Tidal Project. The proposed 680-kilowatt project would be located on the east side of Admiralty Inlet in Puget Sound, Washington, about 1 kilometer west of Whidbey Island, entirely within Island County, Washington. The Federal Energy Regulatory Commission (FERC) is the lead agency. DOE is a cooperating agency. PUBLIC COMMENT OPPORTUNITIES None available at this time. DOCUMENTS AVAILABLE FOR DOWNLOAD August 9, 2013 EA-1949: FERC Notice of Availability Errata Sheet

316

E-Print Network 3.0 - al sio2 si Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Energy ; Materials Science 8 Suppression of quantum well intermixing in GaAsAlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer Summary: investigation....

317

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

318

Vacancy-Vacancy Interactions in NiAl Matthew O. Zacate and Gary S. Collins  

E-Print Network [OSTI]

Vacancy-Vacancy Interactions in NiAl Matthew O. Zacate and Gary S. Collins Department of Physics, Washington State University, Pullman, WA 99164, USA Keywords: point defect, vacancy, defect interaction, intermetallic compound, perturbed angular correlation, PAC, NiAl Abstract. Interactions between Ni vacancies

Collins, Gary S.

319

GRR/Section 18-WA-b - Dangerous Waste Permit | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 18-WA-b - Dangerous Waste Permit GRR/Section 18-WA-b - Dangerous Waste Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 18-WA-b - Dangerous Waste Permit 18-WA-b - Dangerous Waste Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies WAC 173-303-020 WAC 173-303-060 WAC 173-303-070 WAC 173-303-071 WAC 173-303-072 WAC 173-303-081 WAC 173-303-082 WAC 173-303-090 WAC 173-303-100 WAC 173-303-110 WAC 173-303-140 WAC 173-303-220 WAC 173-303-281 WAC 173-303-282 WAC 173-303-803 WAC 173-303-845 Triggers None specified The Washington State Department of Ecology (WSDE) oversees the permitting process for dangerous and solid waste. In Washington, a developer must obtain a permit if they handle dangerous waste and solid waste and are

320

DOE Zero Energy Ready Home Case Study: Clifton View Homes, Whidbey Island, WA  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready home on Whidbey Island, WA, that scores HERS 37 without PV or HERS -13 with 10 kW PV, enough to power the home and an electric car. The two-story custom home...

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Comment on the future of the Bonneville Power Administration Jim G. Likes, Thurston County, WA  

E-Print Network [OSTI]

Comment on the future of the Bonneville Power Administration Jim G. Likes, Thurston County, WA Bonneville is a regional agency that markets federal hydropower and augments its power supply with market, everyday citizens, to pay illegally inflated power costs. Because of this, Bonneville should have the legal

322

Application of a modified denitrifying bacteria method for analyzing groundwater and vadose zone pore water nitrate at the Hanford Site, WA, USA.  

E-Print Network [OSTI]

the Hanford Site, WA, USA. Woods, Katharine N. ; Singleton,reside at DOE sites across the USA. Nitrate concentrations >

Woods, Katharine N.; Singleton, Michael J.; Conrad, Mark

2003-01-01T23:59:59.000Z

323

E-Print Network 3.0 - aluminium incorporating al-hf Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solar Cells May See Off Silicon Summary: which involves growing alternate layers of gallium arsenide (GaAs) and aluminium arsenide (Al... be incorporated into. "If you can...

324

The development of integrated chemical microsensors in GaAs  

SciTech Connect (OSTI)

Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

1999-11-01T23:59:59.000Z

325

Anemometer Data (Wind Speed, Direction) for Quinault #3, WA (2004 - 2005) |  

Open Energy Info (EERE)

Quinault #3, WA (2004 - 2005) Quinault #3, WA (2004 - 2005) Dataset Summary Description Wind data collected from Quinault Indian Reservation in Washington from an anemometer as part of the Native American anemometer loan program. Monthly mean wind speed is available for 2004 through 2005, as is wind direction and turbulence data. Data is reported from a height of 20 m. The data was originally made available by Wind Powering America, a DOE Office of Energy Efficiency & Renewable Energy (EERE) program. A dynamic map displaying all available data from DOE anemometer loan programs is available http://www.windpoweringamerica.gov/anemometerloans/projects.asp. Source EERE Date Released December 02nd, 2010 (4 years ago) Date Updated December 02nd, 2010 (4 years ago) Keywords wind

326

EA-1855: Creston-Bell Rebuild Project, Spokane and Lincoln Counties, WA |  

Broader source: Energy.gov (indexed) [DOE]

855: Creston-Bell Rebuild Project, Spokane and Lincoln 855: Creston-Bell Rebuild Project, Spokane and Lincoln Counties, WA EA-1855: Creston-Bell Rebuild Project, Spokane and Lincoln Counties, WA Summary This EA (also known as DOE/EA-4406 or DOE/BP-4406) evaluates the potential environmental impacts from rebuilding the Creston-Bell No. 1 115-kV transmission line, including the replacement of wood poles and associated structural components and conductor and access road improvements. The 54-mile long, wood pole line extends from the Bonneville Power Administration (BPA) Creston substation to the BPA Bell substation near Spokane in Lincoln and Spokane Counties, Washington. Additional information about this project is available on the BPA website. Public Comment Opportunities None available at this time. Documents Available for Download

327

Vacancy-Induced 2×2 Reconstruction of the Ga(111) Surface of GaAs  

Science Journals Connector (OSTI)

Vacancy formation on the GaAs(111) surface is calculated to be strongly exothermic in character. The creation of one vacancy in each 2×2 cell allows the remaining Ga surface atoms to have a large inward relaxation, resulting in a 2.3-eV reduction in energy. It also transforms the polar (111) surface into a nonpolar (110)-like surface. The calculations provide strong support for the vacancy model of Tong et al., which is determined from analysis of low-energy-electron-diffraction data.

D. J. Chadi

1984-05-21T23:59:59.000Z

328

DOE Zero Energy Ready Home Case Study, Clifton View Homes, Coupeville, WA, Systems Home  

Broader source: Energy.gov [DOE]

Case-study of a DOE Zero Energy Ready Home on Whidbey Island, WA, that scored HERS 45 without PV. This 2,908 ft2 custom/system home has a SIP roof and walls, R-20 rigid foam under slab, triple-pane windows, ground source heat pump for radiant floor heat, and a unique balanced ventilation system using separate exhaust fans to bring air into and out of home.

329

DOE Zero Energy Ready Home Case Study TC Legend, Seattle, WA, Custom Home  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready Home in Seattle, WA, that scored HERS 37 without PV, HERS -1 with PV. This 1,915 ft2 custom home has SIP walls and roof, R-20 XPS under the slab, triple-pane windows, an air to water heat pump for radiant heat, and balanced ventilation with timer –controlled fans to bring in and exhaust air.

330

DOE Zero Energy Ready Home Case Study, Dwell Development, Seattle, WA, Systems Home  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready Home in Seattle, WA, that scored HERS 34 without PV. This 2,000 ft2 system home has R-45 double-stud walls, an unvented flat roof with 2 inches of spray foam plus 18 inches blown cellulose, R-42 XPS under slab, triple-pane windows, and a ductless mini-split heat pump.

331

Resonant Raman scattering in an InAs/GaAs monolayer structure  

E-Print Network [OSTI]

), embedded in bulklike GaAs with two Al- GaAs cladding layers forming a waveguide. The InAs- mono- layer system used. Raman spectra were excited with a Ti-Sapphire laser, tuned from 1.41 eV to 1.435 e

Nabben, Reinhard

332

Excited state absorption of V/sup 2 +/ and Cr/sup 3 +/ ions in crystal hosts. [V/sup 2 +/ in KMgF/sub 3/; Cr/sup 3 +/ in Na/sub 3/Ga/sub 2/Li/sub 3/F/sub 12/ and BeAl/sub 2/O/sub 4/  

SciTech Connect (OSTI)

We have measured the excited state absorption spectra of KMgF/sub 3/:V/sup 2 +/, Na/sub 3/Ga/sub 2/Li/sub 3/F/sub 12/:Cr/sup 3 +/, and BeAl/sub 2/O/sub 4/:Cr/sup 3 +/. The /sup 4/T/sub 2/ ..-->.. /sup 4/T/sub 1/a, /sup 4/T/sub 1/b transitions were observed for the first two systems, while the /sup 2/E, /sup 2/T/sub 1/ ..-->.. /sup 2/T/sub 2/ transitions were seen for BeAl/sub 2/O/sub 4/:Cr/sup 3 +/. All excited state absorptions, except the /sup 4/T/sub 2/ ..-->.. /sup 4/T/sub 1/a transition, can be understood on the basis of simple crystal field theory. The /sup 4/T/sub 2/ ..-->.. /sup 4/T/sub 1/a transition is found to be profoundly modified by the Jahn-Teller effect, such that it is broader and at higher energy than otherwise expected. This excited state absorption is observed to overlap the emission spectrum of KMgF/sub 3/:V/sup 2 +/, and thereby substantially reduce the effective stimulated emission cross-section.

Payne, S.A.; Chase, L.L.

1987-01-01T23:59:59.000Z

333

File:06-WA-b - Washington Construction Storm Water Permit.pdf | Open Energy  

Open Energy Info (EERE)

File File Edit History Facebook icon Twitter icon » File:06-WA-b - Washington Construction Storm Water Permit.pdf Jump to: navigation, search File File history File usage Metadata File:06-WA-b - Washington Construction Storm Water Permit.pdf Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Go to page 1 2 Go! next page → next page → Full resolution ‎(1,275 × 1,650 pixels, file size: 60 KB, MIME type: application/pdf, 2 pages) File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 15:28, 6 December 2013 Thumbnail for version as of 15:28, 6 December 2013 1,275 × 1,650, 2 pages (60 KB) Alevine (Talk | contribs) 15:25, 6 December 2013 Thumbnail for version as of 15:25, 6 December 2013 1,275 × 1,650, 2 pages (60 KB) Alevine (Talk | contribs)

334

File:EIA-Eastern-OR-WA-BOE.pdf | Open Energy Information  

Open Energy Info (EERE)

Eastern-OR-WA-BOE.pdf Eastern-OR-WA-BOE.pdf Jump to: navigation, search File File history File usage Eastern Oregon and Washington By 2001 BOE Reserve Class Size of this preview: 776 × 600 pixels. Full resolution ‎(1,650 × 1,275 pixels, file size: 460 KB, MIME type: application/pdf) Description Eastern Oregon and Washington By 2001 BOE Reserve Class Sources Energy Information Administration Authors Samuel H. Limerick; Lucy Luo; Gary Long; David F. Morehouse; Jack Perrin; Robert F. King Related Technologies Oil, Natural Gas Creation Date 2005-09-01 Extent Regional Countries United States UN Region Northern America States Oregon, Washington File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 18:00, 20 December 2010 Thumbnail for version as of 18:00, 20 December 2010 1,650 × 1,275 (460 KB) MapBot (Talk | contribs) Automated bot upload

335

Darlington AL O'Reillys AL  

E-Print Network [OSTI]

CanungraCk Darlington AL Darlington Coom era R O'Reillys AL Beechmont AL Binna Burra AL BackCk Tyungun AL Numinbah Valley AL NerangR Natural Bridge Numinbah AL Little Nerang Dam AL Albert R Bromfleet AL Benobble AL Wolffdene AL Luscombe AL Wongawallan AL Mt Tamborine Canungra Pimpama R Laheys Lookout

Greenslade, Diana

336

Ralisation et caractrisation d'un transistor effet de champ JFET au GaAs en vue de son intgration avec une photodiode  

E-Print Network [OSTI]

intégration avec une photodiode M. T. Belaroussi, F. Therez et R. Alcubilla (*) Laboratoire d'Automatique et d étendus à la fabrication du circuit intégré GaAlAs-GaAs associant une photodiode à un TEC. Abstract. 2014AlAs-GaAs monolithic integration of a photodiode and FET. Revue Phys. Appl. 22 (1987) 77-82 JANVIER 1987

Paris-Sud XI, Université de

337

Nonlinear absorption edge properties of 1.3-m GaInNAs saturable R. Grange,a  

E-Print Network [OSTI]

-starting and stable operation of the laser at tens of GHz repetition rates.4 So far, InGaAsP,5 InGaAs,6,7 and AlNonlinear absorption edge properties of 1.3- m GaInNAs saturable absorbers R. Grange,a A. Rutz, V above the PL peak and R scales with the linear absorption even in the bandtail. The product R

Keller, Ursula

338

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

339

DOE Challenge Home Case Study TC Legend, Seattle, WA, Custom Home  

Broader source: Energy.gov (indexed) [DOE]

TC Legend TC Legend Homes Seattle, WA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

340

Recipient: County of Kitsap, WA ENERGY EFFICIENCY AND CONSERVATION BLOCK GRANTS NEPA COMPLIANCE FORM  

Broader source: Energy.gov (indexed) [DOE]

it: EE 000 0853 it: EE 000 0853 Recipient: County of Kitsap, WA ENERGY EFFICIENCY AND CONSERVATION BLOCK GRANTS NEPA COMPLIANCE FORM Activities Determination/ Categorical Exclusion Reviewer's Specific Instructions and Rationale (Restrictions and Allowable Activity) Kitsap Built Green Projects B5.1 Waste Stream, Engineering, and Historic Preservation clauses. Kitsap County Building Retrofits and Energy Efficiency Upgrades (Green Jobs Initiative) B5.1 except geothermal Waste Stream, Engineering, and Historic Preservation clauses. Prohibited: Any implementation of geothermal projects/construction activities without NEPA approval from DOE. Geothermal projects are to be provided to DOE for analysis. Energy Efficiency Implementation and Strategy A9, All, B5.1 None Energy Services Corps A9, All, B5.1

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

DOE Challenge Home Case Study, Dwell Development, Seattle, WA, Systems Home  

Broader source: Energy.gov (indexed) [DOE]

Dwell Dwell Development Seattle, WA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

342

Microsoft Word - CX-AccessRoads-KingCoWA-FY13_WEB.doc  

Broader source: Energy.gov (indexed) [DOE]

22, 2013 22, 2013 REPLY TO ATTN OF: KEPR-Covington SUBJECT: Environmental Clearance Memorandum Rick Ross Engineer - TELF-TPP-3 Proposed Action: Covington District Culvert Replacements Categorical Exclusion Applied (from Subpart D, 10 C.F.R. Part 1021): Appendix B1.3, Routine Maintenance Location: King County, WA Proposed by: Bonneville Power Administration (BPA) Description of the Proposed Action: BPA is proposing to replace existing culverts at 12 access road stream crossings that present barriers to fish passage. These improvements will be made on BPA easement access roads within DNR owned and managed lands. BPA will make these improvements by installing new fish friendly culverts and/or bridges at each stream crossing. The current stream crossings do not meet DNR fish passage standards that will be in

343

DOE Challenge Home Case Study, Clifton View Homes, Coupeville, WA, Systems Home  

Broader source: Energy.gov (indexed) [DOE]

Clifton View Clifton View Homes Coupeville, WA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

344

Nr. 077 / 2014 // 6. Mai 2014 Prof. Ngugi wa Thiong'o whrend seiner Rede zur Annahme der Ehrendoktorwrde  

E-Print Network [OSTI]

Nr. 077 / 2014 // 6. Mai 2014 1/5 Prof. Ngugi wa Thiong'o während seiner Rede zur Annahme der der afrikanischen Partneruniversitäten im Netzwerk der BIGSAS würden den Geehrten begleiten. Die Rede

Ullmann, G. Matthias

345

October 14 WA Division Newsletter Page 4 Tool durability and steel microstructure in friction stir welding of mild steel  

E-Print Network [OSTI]

October 14 WA Division Newsletter Page 4 Tool durability and steel microstructure in friction stir welding of mild steel A. De1 , H. K. D. H. Bhadeshia2 and T. DebRoy3 1 Indian Institute of Technology- ium alloys has been applied to the FSW of steel. The calculations were extended to predict

Cambridge, University of

346

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

347

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

348

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name: GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and...

349

ALS@20  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

feed-image feed-image Digg: ALSBerkeleyLab Facebook Page: 208064938929 Flickr: advancedlightsource Twitter: ALSBerkeleyLab YouTube: AdvancedLightSource Home About the ALS ALS@20 ALS@20 ALS@20 Kick-Off Celebration Print On Friday, January 11, the Advanced Light Source celebrated the beginning of its 20th anniversary year with a brunch attended by more than 150 current and past staff members. After introductory remarks describing the trials and tribulations encountered during the construction of the ALS from former Director Jay Marx, current ALS Scientific Director Steve Kevan and Director Roger Falcone talked about the progress of the facility over the years. Attendees were then able to view more than 500 historical photos of the ALS and its staff displayed around the room.

350

MOCVD und Charakterisierung von GaN-Dünnschichten und -Nanostrukturen unter Verwendung eines Single-Molecule-Precursors.  

E-Print Network [OSTI]

??In dieser Arbeit wurde detailliert das Potential eines azidischen Single-Molecule-Precursors als mögliche Alternative zum kommerziellen Standardprozess zur Herstellung dünner GaN-Halbleiterdünnschichten evaluiert. Neben den mit maximalen… (more)

Wohlfart, Andreas

2002-01-01T23:59:59.000Z

351

Observation of the potential distribution in GaN-based devices by a scanning electron microscope  

Science Journals Connector (OSTI)

......potential. On the other hand, higher accelerating voltages resulted in blurred images. The second sample was a light emitting diode structure based on AlN where a multiple quantum well (MQW) structure was sandwiched by p- and n-AlGaN materials......

Takahiro Karumi; Shigeyasu Tanaka; Takayoshi Tanji

2014-11-01T23:59:59.000Z

352

CORE DATA PROCESSING SOFTWARE PLAN REVIEW | SEATTLE, WA | SEPTEMBER 19-20, 2013Name of Mee)ng Loca)on Date -Change in Slide Master CDP FINAL DESIGN REVIEW  

E-Print Network [OSTI]

CORE DATA PROCESSING SOFTWARE PLAN REVIEW | SEATTLE, WA | SEPTEMBER 19-20, 2013Name of Mee DATA PROCESSING SOFTWARE PLAN REVIEW | SEATTLE, WA | SEPTEMBER 19-20, 2013 Outline Single PLAN REVIEW | SEATTLE, WA | SEPTEMBER 19-20, 2013 Background Estimation ­ One of the unsolved issues

Masci, Frank

353

Infrared spectroscopy of amorphous hydrogenated GaAs: Evidence for H bridges  

Science Journals Connector (OSTI)

The infrared absorption spectra of hydrogenated amorphous GaAs show two prominent hydrogen-related bands at 530 and 1460 cm-1. These bands are very broad and they amount to most of the hydrogen-induced infrared absorption. The remaining structures are a number of comparatively sharp lines which we interpret as Ga-H and As-H modes in partial agreement with earlier investigations. We argue that the broad bands arise from near-stretching (1460 cm-1) and from wagging (530 cm-1) vibrations of H atoms situated in bridging positions between two Ga atoms. This assignment is supported by similar bands in Al-H polymers, a-GaP: H, and a-GaSb: H. A model calculation of the mode frequencies is also presented.

Z. P. Wang; L. Ley; M. Cardona

1982-09-15T23:59:59.000Z

354

Submicron three-dimensional infrared GaAsAlxOy-based photonic crystal using single-step epitaxial growth  

E-Print Network [OSTI]

to determine the transmission characteris- tics. The starting point in the fabrication of the photonic crys-beam patterned resist and sub- sequently the checkerboard pattern is transferred to the metal layer by a lift growth system. After oxide desorption, four periods of alternating 0.2 m Al0.98Ga0.02As/0.2 m Al0.30Ga0

Zhou, Weidong

355

STOELRIVESLLP 600UniversityStreet,Suite3600,Seattle,WA98101  

E-Print Network [OSTI]

, Plaintiff, v. NATIONAL MARINE FISHERIES SERVICE, et al. Defendants. Case No. 4:13-cv-00021-RRB NORTH SLOPE)386-7500 Alaska Oil and Gas Association, et al. v. Pritzker, et al., Consolidated Case No. 4:13-cv-00018-RRB-7500 Email: jwleppo@stoel.com rpsteen@stoel.com Attorneys for Plaintiffs Alaska Oil and Gas Association

356

Industry @ ALS  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Industry @ ALS Industry @ ALS Industry @ ALS Concrete Industry Benefits from Ancient Romans and the ALS Print Thursday, 17 October 2013 14:24 New insights into the Romans' ingenious concrete harbor structures emerging from ALS beamline research could move the modern concrete industry toward its goal of a reduced carbon footprint. Summary Slide Read more... Moving Industry Forward: Finding the Environmental Opportunity in Biochar Print Thursday, 12 September 2013 08:41 Using ALS Beamlines 10.3.2 and 8.3.2, the Environmental Protection Agency (EPA) is currently investigating how biochar sorbs environmental toxins and which kinds of biochar are the most effective. The possibilities for widespread use have already launched entrepreneurial commercial ventures. Summary Slide

357

Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition  

DOE Patents [OSTI]

Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

Han, Jung (Woodbridge, CT); Su, Jie (New Haven, CT)

2008-08-05T23:59:59.000Z

358

ALS Visitors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

including Ethan Crumlin (at right) about current research in energy storage and battery efficiency. Berkeleyside Editor Lance Knoble toured the ALS and Berkeley Lab with...

359

Beta decay of Ga-62  

E-Print Network [OSTI]

We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

360

Combustion of Nano-Aluminum and Liquid Water G.A. Risha, S.F. Son  

E-Print Network [OSTI]

1 Combustion of Nano-Aluminum and Liquid Water G.A. Risha, S.F. Son , R.A. Yetter, V. Yang, and B: Supplemental materials submitted #12;2 Combustion of Nano-Aluminum and Liquid Water G.A. Risha, S.F. Son, R of nano-aluminum (nAl) and liquid water has been conducted. In particular, linear and mass-burning rates

Yang, Vigor

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Integration of inverted InGaAs MSM array on Si substrate through low temperature  

E-Print Network [OSTI]

to reduce thermal stress at the interface. Huang et al. [2] presented a thin-film InGaAs MSM PD bonded to Si layers including those on InGaAs MSMs and Si/SiO2 is 860 nm. eching window InP epi-layer SiO2 Si Ti Au Au HCl:H3PO4 (1:1) to open a photodetection window. Citric acid was used to remove the InGaAs etching

Huang, Zhaoran "Rena"

362

Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells  

SciTech Connect (OSTI)

The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk conductivity by using gallium source materials of different degrees of impurity concentrations. While highest-purity gallium is accompanied by clear conduction through the sample bulk, intentional impurity incorporation leads to a bulk resistance over 1 M?, independent of applied magnetic fields. In addition, ultra high electron mobilities for GaAs/AlGaAs structures fabricated in a molecular beam epitaxy system used for the growth of Sb-based samples are reported.

Charpentier, Christophe; Fält, Stefan; Reichl, Christian; Nichele, Fabrizio; Nath Pal, Atindra; Pietsch, Patrick; Ihn, Thomas; Ensslin, Klaus; Wegscheider, Werner [Laboratory for Solid State Physics, ETH Zürich, 8093 Zürich (Switzerland)] [Laboratory for Solid State Physics, ETH Zürich, 8093 Zürich (Switzerland)

2013-09-09T23:59:59.000Z

363

Optical losses of Al-free lasers for {lambda}=0.808 and 0.98 {mu}m  

SciTech Connect (OSTI)

In this work, we study the origin of the optical losses in Al-free InGaAsP/GaAs ({lambda}=0.808 {mu}m) and InGaAs/GaAs/InGaP ({lambda}=0.980 {mu}m) lasers. Theoretical modeling and the experimental results indicate that the scattering of the laser beam by refractive index fluctuation in the alloys is the dominant loss in our lasers, and the loss due to the free-carrier absorption and scattering by interface roughness are negligible. {copyright} {ital 1996 American Institute of Physics.}

Yi, H.; Diaz, J.; Lane, B.; Razeghi, M. [Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208 (United States)] [Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208 (United States)

1996-11-01T23:59:59.000Z

364

ALS Visitors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ALS Visitors ALS Visitors ALS Visitors Print Wednesday, 29 July 2009 00:00 ALS staff members host a variety of scientific, educational, government, and community-related tours each month. November 2013 poneman U.S. Deputy Secretary of Energy Daniel Poneman visited Berkeley Lab on Friday, Nov. 15, during a brief stay in the Bay Area. Glenn Mara of the University of California Office of the President and Aundra Richards of the DOE Berkeley Site Office joined Deputy Laboratory Director Horst Simon's welcome. They updated Poneman on the lab's future initiatives and current capital projects and heard briefings on cyber security, computing, and the Joint BioEnergy Institute. As second-in-command at DOE, Poneman is responsible for assisting the Secretary of Energy in the management and operations of the agency and acting on his behalf when necessary.During his tour of the ALS, Poneman (right) spoke with Ken Goldberg (Materials Sciences Division) at the CXRO beamline.

365

Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices  

SciTech Connect (OSTI)

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

2003-06-16T23:59:59.000Z

366

A WASHINGTON STATE UNIVERSITY POSTDOCTORAL POSITION FOR WORK AT LIGO HANFORD, WA Applications are invited for a postdoctoral position in the Gravity Group at the Department of Physics  

E-Print Network [OSTI]

A WASHINGTON STATE UNIVERSITY POSTDOCTORAL POSITION FOR WORK AT LIGO HANFORD, WA Applications characterization for the Advanced Laser Interferometer Gravitational wave Observatory (LIGO) at the Hanford site characterization at the LIGO Hanford observatory. Familiarity with data analysis pipelines for searching

Collins, Gary S.

367

Application of a modified denitrifying bacteria method for analyzing groundwater and vadose zone pore water nitrate at the Hanford Site, WA, USA.  

E-Print Network [OSTI]

zone pore water nitrate at the Hanford Site, WA, USA. Woods,and Conrad, Mark The Hanford Site in southern WashingtonL have been reported for Hanford groundwaters, where nitrate

Woods, Katharine N.; Singleton, Michael J.; Conrad, Mark

2003-01-01T23:59:59.000Z

368

A review of "Defining the Jacobean Church: the Politics of Religious Controversy, 1603-1625." by Charles W.A. Prior  

E-Print Network [OSTI]

REVIEWS 151 Charles W.A. Prior. Defining the Jacobean Church: the Politics of Religious Controversy, 1603-1625. Cambridge: Cambridge University Press, 2005. xiv + 294 pp. $85.00. Review by GRAHAM PARRY, UNIVERSITY OF YORK. Defining the Jacobean...

Parry, Graham

2006-01-01T23:59:59.000Z

369

Sandia National Laboratories: AlGaAs LEDs  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

electroluminescence was first reported by H.J. Round in 1907, and the first light-emitting diode (LED) was reported by O.V. Losev in 1927. Not until the birth of semiconductor...

370

Doping Characteristics of Gas-Source MBE-Grown n-AlxGa1-xAs (x=0-0.28) Doped Using Disilane  

Science Journals Connector (OSTI)

Si doping using uncracked disilane (Si2H6) in gas-source molecular beam epitaxy of n-AlxGa1-xAs (x=0-0.28) using triethyl gallium, triethyl aluminum, and arsine was studied in a carrier concentration from 5 ? 1017 to 2 ? 1018 cm-3. We found that (1) the Si atomic concentration of AlGaAs is proportional to the Si2H6 flow rate, and decreases with increasing Al content at a constant Si2H6 flow rate, and (2) the carrier concentration of AlGaAs shows a square-root dependence on the Si atomic concentration incorporated.

Toshio Fujii; Adarsh Sandhu; Hideyasu Ando; Yuji Kataoka; Hideaki Ishikawa

1990-01-01T23:59:59.000Z

371

ALS Visitors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ALS Visitors Print ALS Visitors Print ALS staff members host a variety of scientific, educational, government, and community-related tours each month. November 2013 poneman U.S. Deputy Secretary of Energy Daniel Poneman visited Berkeley Lab on Friday, Nov. 15, during a brief stay in the Bay Area. Glenn Mara of the University of California Office of the President and Aundra Richards of the DOE Berkeley Site Office joined Deputy Laboratory Director Horst Simon's welcome. They updated Poneman on the lab's future initiatives and current capital projects and heard briefings on cyber security, computing, and the Joint BioEnergy Institute. As second-in-command at DOE, Poneman is responsible for assisting the Secretary of Energy in the management and operations of the agency and acting on his behalf when necessary.During his tour of the ALS, Poneman (right) spoke with Ken Goldberg (Materials Sciences Division) at the CXRO beamline.

372

Al Weinrub  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Al Weinrub Al Weinrub Author, "COMMUNITY POWER: Decentralized Renewable Energy in California" Member, Sierra Club California Clean Energy-Climate CommitteeMember, Steering Committee, Bay Area Clean Energy Alliance al.weinrub@comcast.net This speaker was a visiting speaker who delivered a talk or talks on the date(s) shown at the links below. This speaker is not otherwise associated with Lawrence Berkeley National Laboratory, unless specifically identified as a Berkeley Lab staff member. Al Weinrub is a member of the Sierra Club California Energy-Climate Committee and serves on the Steering Committee of the Bay Area's Local Clean Energy Alliance. He is the author of COMMUNITY POWER: Decentralized Renewable Energy in California (http://www.localcleanenergy.org/Community-Power-Publication)

373

IEEE TRANSACTIONS ON MAGNETICS, VOL. 38, NO. 4, JULY 2002 1803 New Ni5Al3 Underlayer for Longitudinal  

E-Print Network [OSTI]

IEEE TRANSACTIONS ON MAGNETICS, VOL. 38, NO. 4, JULY 2002 1803 New Ni5Al3 Underlayer--We describe a new Ni5Al3 underlayer for high-den- sity longitudinal magnetic recording. The Ni5Al3 underlayer has the FCC derivative Ga3Pt5 structure. The Ni5Al3 (221) plane has good lattice match with the Co

Laughlin, David E.

374

E-Print Network 3.0 - al-fe alloys strukturnyj Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Theory NiAl CoAl FeAl CoGa PdIn VT,1 A Q M 1, 0 128, 0 144... , with transition-metal vacancies (VT) for T-deficient ... Source: Collins, Gary S. - Department of Physics...

375

Pulsed laser deposition growth of heteroepitaxial YBa2Cu3O7/La0.67Ca0.33MnO3 superlattices on NdGaO3 and Sr0.7La0.3Al0.65Ta0.35O3 substrates  

SciTech Connect (OSTI)

Heteroepitaxial superlattices of [YBa{sub 2}Cu{sub 3}O{sub 7}(n)/La{sub 0.67}Ca{sub 0.33}MnO{sub 3}(m)]{sub x} (YBCO/LCMO), where n and m are the number of YBCO and LCMO monolayers and x the number of bilayer repetitions, have been grown with pulsed laser deposition on NdGaO{sub 3} (110) and Sr{sub 0.7}La{sub 0.3}Al{sub 0.65}Ta{sub 0.35}O{sub 3} (001). These substrates are well lattice matched with YBCO and LCMO and, unlike the commonly used SrTiO{sub 3}, they do not give rise to complex and uncontrolled strain effects at low temperature. The growth dynamics and the structure have been studied in situ with reflection high-energy electron diffraction and ex situ with scanning transmission electron microscopy, x-ray diffraction, and neutron reflectometry. The individual layers are found to be flat and continuous over long lateral distances with sharp and coherent interfaces and with a well-defined thickness of the individual layer. The only visible defects are antiphase boundaries in the YBCO layers that originate from perovskite unit-cell height steps at the interfaces with the LCMO layers. We also find that the first YBCO monolayer at the interface with LCMO has an unusual growth dynamics and is lacking the CuO chain layer, while the subsequent YBCO layers have the regular Y-123 structure. Accordingly, the CuO{sub 2} bilayers at both the LCMO/YBCO and the YBCO/LCMO interfaces are lacking one of their neighboring CuO chain layers and, thus, half of their hole-doping reservoir. Nevertheless, from electric transport measurements on a superlattice with n = 2 we obtain evidence that the interfacial CuO{sub 2} bilayers remain conducting and even exhibit the onset of a superconducting transition at very low temperature. Finally, we show from dc magnetization and neutron reflectometry measurements that the LCMO layers are strongly ferromagnetic.

Malik, V. K. [University of Fribourg; Marozau, I. [University of Fribourg; Das, S. [University of Fribourg; Doggett, B. [University of Fribourg; Satapathy, D. K. [University of Fribourg; Uribe-Laverde, M. A. [University of Fribourg; Biskup, Nevenko [ORNL; Varela del Arco, Maria [ORNL; Schneider, C. W. [Paul Scherrer Institut, Villigen, Switzerland; Marcelot, C. [Paul Scherrer Institut, Villigen, Switzerland; Stahn, J. [Paul Scherrer Institut, Villigen, Switzerland; Bernhard, C. [University of Fribourg

2012-01-01T23:59:59.000Z

376

Definitive evidence of interlayer coupling between Ga{sub 1-x}Mn{sub x}As layers separated by a nonmagnetic spacer  

SciTech Connect (OSTI)

We have used polarized neutron reflectometry to study the structural and magnetic properties of the individual layers in a series of AlGaAs:Be/Ga{sub 1-x}Mn{sub x}As/GaAs/Ga{sub 1-x}Mn{sub x}As multilayer samples. Structurally, we observe that the samples are virtually identical except for the GaAs spacer thickness (which varies from 3 to 12 nm), and confirm that the spacers contain little or no Mn. Magnetically, we observe that for the sample with the thickest spacer layer, the Ga{sub 1-x}Mn{sub x}As layer adjacent to the Be-doped AlGaAs cap has a temperature dependent magnetization very different from that of the other Ga{sub 1-x}Mn{sub x}As layer. However, as the spacer layer thickness is reduced, the temperature dependent magnetizations of the two Ga{sub 1-x}Mn{sub x}As layers become progressively more similar--a trend we find to be independent of the crystallographic direction along which spins are magnetized. These results definitively show that Ga{sub 1-x}Mn{sub x}As layers can couple across a nonmagnetic spacer and that such coupling depends on spacer thickness.

Kirby, B. J.; Borchers, J. A.; Liu, X.; Ge, Z.; Cho, Y. J.; Dobrowolska, M.; Furdyna, J. K. [NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2007-11-15T23:59:59.000Z

377

RECIPIENT:Gwinnett Co, GA  

Broader source: Energy.gov (indexed) [DOE]

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

378

Novel GaAs Devices  

Science Journals Connector (OSTI)

As the dimensions of GaAs devices shrink, the effective electron velocity should increase, leading to a shorter transit time and to a ballistic or near-ballistic mode of operation (see Chapter 2). At the same ...

Michael Shur

1987-01-01T23:59:59.000Z

379

1D-1D tunneling between vertically coupled GaAs/AlGaAs quantum wires.  

SciTech Connect (OSTI)

We report low-dimensional transport and tunneling in an independently contacted vertically coupled quantum wire system, with a 7.5 nm barrier between the wires. The derivative of the linear conductance shows evidence for both single wire occupation and coupling between the wires. This provides a map of the subband occupation that illustrates the control that we have over the vertically coupled double quantum wires. Preliminary tunneling results indicate a sharp 1D-1D peak in conjunction with a broad 2D-2D background signal. This 1D-1D peak is sensitively dependent on the top and bottom split gate voltage.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-07-01T23:59:59.000Z

380

Capacitance hysteresis in GaN/AlGaN heterostructures L. E. Byrum,1  

E-Print Network [OSTI]

Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA 2 NDP Optronics

Matsik, Steven G.

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges  

E-Print Network [OSTI]

, Georgia State University, Atlanta, Georgia 30303 S. G. Matsik NDP Optronics LLC, Mableton, Georgia 30126 A

Perera, A. G. Unil

382

Electron microscopy of GaAs/AlGaAs quantum cascade laser  

Science Journals Connector (OSTI)

The quantum cascade laser (QCL) is based on a different principle comparing to bipolar semiconductor lasers, because it uses only one type of ... — electrons and therefore is called an unipolar laser.

A. ?aszcz; J. Ratajczak; A. Czerwinski…

2008-01-01T23:59:59.000Z

383

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

ion beam etching with SU-8 as mask," Optical Engineering,ion beam etching with SU-8 as mask,” Optical Engineering,

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

384

ALS Visitors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Quick Facts Quick Facts ALS Visitors Print ALS staff members host a variety of scientific, educational, government, and community-related tours each month. November 2013 poneman U.S. Deputy Secretary of Energy Daniel Poneman visited Berkeley Lab on Friday, Nov. 15, during a brief stay in the Bay Area. Glenn Mara of the University of California Office of the President and Aundra Richards of the DOE Berkeley Site Office joined Deputy Laboratory Director Horst Simon's welcome. They updated Poneman on the lab's future initiatives and current capital projects and heard briefings on cyber security, computing, and the Joint BioEnergy Institute. As second-in-command at DOE, Poneman is responsible for assisting the Secretary of Energy in the management and operations of the agency and acting on his behalf when necessary.During his tour of the ALS, Poneman (right) spoke with Ken Goldberg (Materials Sciences Division) at the CXRO beamline.

385

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

386

Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction  

SciTech Connect (OSTI)

We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7?dB for 2?V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields <5?nF/cm{sup 2}, which shows a strong possibility for high-speed applications with a broad area device.

Seyedi, M. A., E-mail: seyedi@usc.edu; Yao, M.; O'Brien, J.; Dapkus, P. D. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States)] [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Wang, S. Y. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States) [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, California 95064, USA and NASA Ames Research Center, Moffett Field, California 94035 (United States)

2013-12-16T23:59:59.000Z

387

Identification of the gallium vacancy-oxygen pair defect in GaN  

SciTech Connect (OSTI)

Cation vacancies like V{sub Ga}, V{sub Al} and their complexes with oxygen are predicted to be abundant in III-nitrides and to play an important role in nonradiative recombination. Appearing in triple or double negatively charged states, they are not paramagnetic and have not so far been detected by magnetic resonance even under illumination. In this Brief Report, we demonstrate an efficient way to make cation vacancy defects in GaN detectable by electron paramagnetic resonance and present our identification of the V{sub Ga}O{sub N} pair in GaN which is the model material for the III-nitrides and their alloys.

Son, N. T.; Hemmingsson, C. G.; Janzen, E. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Paskova, T.; Evans, K. R. [Kyma Technologies Inc., 8829 Midway West Road, Raleigh, North Carolina 27617 (United States); Usui, A. [R and D Division, Furukawa Co., Ltd., Tsukuba, Ibaraki 305-0856 (Japan); Morishita, N.; Ohshima, T. [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Isoya, J. [Graduate School of Library, Information and Media Studies, University of Tsukuba, Tsukuba, Ibaraki 305-8550 (Japan); Monemar, B. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Nanometer Structure Consortium, Lund University, P.O. Box 118, S-221 00 Lund (Sweden)

2009-10-15T23:59:59.000Z

388

Decommissioning samples from the Ft. Lewis, WA, solvent refined coal pilot plant: chemical analysis and biological testing  

SciTech Connect (OSTI)

This report presents the results from chemical analyses and limited biological assays of three sets of samples from the Ft. Lewis, WA solvent refined coal (SRC) pilot plant. The samples were collected during the process of decommissioning this facility. Chemical composition was determined for chemical class fractions of the samples by using high-resolution gas chromatography (GC), high-resolution GC/mass spectrometry (MS) and high-resolution MS. Biological activity was measuring using both the histidine reversion microbial mutagenicity assay with Salmonella typhimurium, TA98 and an initiation/promotion mouse-skin tumorigenicity assay. 19 refs., 7 figs., 27 tabs.

Weimer, W.C.; Wright, C.W.

1985-10-01T23:59:59.000Z

389

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

390

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response  

E-Print Network [OSTI]

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 27 infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

Jalali. Bahram

391

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

392

AL. I  

Office of Legacy Management (LM)

AL. I AL. I Department of Energy Washington, DC 20545 OCT 13 Vii87 Mr. John T. Shields A214 National Fertilizer Development Center Tennessee Valley Authority Muscle Shoals, Alabama 35660 Dear Mr. Shields: As you may know, the Department of Energy (DOE) is evaluating the radiological condition of sites that were utilized under the Manhattan Engineer District and the Atomic Energy Commission (AEC) during the early years of nuclear development to determine whether they need remedial action and whether the Department has authority to perform such action. AEC work at the TVA during the period 1951 through 1955 involved the development of a process to recover uranium from the production of phosphate fertilizer. A laboratory and pilot plant were operated at the site, but very little

393

Repulsive interaction in the macroscopically ordered exciton state in GaAs?AlxGa1?xAs coupled quantum well structures  

Science Journals Connector (OSTI)

The macroscopically ordered exciton state (MOES)—a periodic array of beads with spatial order on a macroscopic length—appears in the external exciton rings in coupled GaAs?(Al,Ga)As quantum wells at low temperatures below a few Kelvin. Here, we report on the experimental study of the interaction in the MOES. The exciton photoluminescence energy varies in concert with the intensity along the circumference of the ring, with the largest energy found in the brightest regions. This shows that the MOES is characterized by the repulsive interaction and is not driven by the attractive interaction.

Sen Yang, A. V. Mintsev, A. T. Hammack, L. V. Butov, and A. C. Gossard

2007-01-17T23:59:59.000Z

394

GaAs–based quantum cascade lasers  

Science Journals Connector (OSTI)

...N. Murdin GaAs-based quantum cascade lasers Sirtori H. Page C. Becker...state-of-the-art of GaAs-based quantum cascade lasers. These new light sources...2000.0739 GaAs-based quantum cascade lasers By C. Sirtori, H. Page...

2001-01-01T23:59:59.000Z

395

Electrical properties of Er-doped In0.53Ga0.47As  

E-Print Network [OSTI]

03C117-3 Burke et al. : Electrical properties of Er-doped InElectrical properties of Er-doped In 0.53 Ga 0.47 As PeterBahk and John E. Bowers Electrical and Computer Engineering

Burke, Peter G.; Lu, Hong; Rudawski, Nicholas G.; Gossard, Arthur G.; Bahk, Je-Hyeong; Bowers, John E.

2011-01-01T23:59:59.000Z

396

Cu(In,Ga)Se2based Photovoltaics: Challenges and Opportunities  

E-Print Network [OSTI]

Cu(In,Ga)Se2­based Photovoltaics: Challenges and Opportunities William Shafarman Institute of Energy Conversion University of Delaware #12;Thin Film Photovoltaics Potential for low cost PV using a Thickness K.Kim, et al., IEEE J. Photovoltaics, 3, 446 (2013). 2 µm, 60 min reaction 1 µm, 25 min reaction 0

Firestone, Jeremy

397

W.A. Parish Post-Combustion CO2 Capture and Sequestration Project, Final Environmental Impact Statement (DOE/EIS-0473)  

Broader source: Energy.gov (indexed) [DOE]

W.A. W.A. Parish Post-Combustion CO 2 Capture and Sequestration Project Final Environmental Impact Statement Summary February 2013 DOE/EIS-0473 Office of Fossil Energy National Energy Technology Laboratory INTENTIONALLY LEFT BLANK COVER SHEET Responsible Federal Agency: U.S. Department of Energy (DOE) Title: W.A. Parish Post-Combustion CO 2 Capture and Sequestration Project, Final Environmental Impact Statement (DOE/EIS-0473) Location: Southeastern Texas, including Fort Bend, Wharton, and Jackson counties Contacts: For further information about this Environmental Impact Statement, contact: For general information on the DOE process for implementing the National Environmental Policy Act, contact: Mark W. Lusk U.S. Department of Energy National Energy Technology Laboratory 3610 Collins Ferry Road Morgantown, WV 26507-0880 (304) 285-4145 or Mark.Lusk@netl.doe.gov

398

W.A. Parish Post-Combustion CO2 Capture and Sequestration Project, Final Environmental Impact Statement (DOE/EIS-0473)  

Broader source: Energy.gov (indexed) [DOE]

NRG W.A. PARISH PCCS PROJECT NRG W.A. PARISH PCCS PROJECT FINAL ENVIRONMENTAL IMPACT STATEMENT APPENDIX H. BEG MODELING REPORT APPENDIX H BEG MODELING REPORT DOE/EIS-0473 NRG W.A. PARISH PCCS PROJECT FINAL ENVIRONMENTAL IMPACT STATEMENT APPENDIX H. BEG MODELING REPORT INTENTIONALLY LEFT BLANK 1 Reservoir modeling and simulation for estimating migration extents of injectate-CO 2 in support of West Ranch oilfield NEPA/EIS Gulf Coast Carbon Center, Bureau of Economic Geology, Jackson School of Geosciences, The University of Texas at Austin May 4, 2012 Summary It is anticipated that anthropogenic carbon dioxide (CO2-A) will be injected into the deep (5,000-6,000 ft below sea level) subsurface for enhanced oil recovery (EOR) at the West Ranch oilfield beginning in early 2015. The purpose of this report is to present reservoir modeling and simulation

399

Molecular Beam Epitaxy on Gas Cluster Ion Beam Prepared GaSb Substrates: Towards Improved Surfaces and Interfaces  

SciTech Connect (OSTI)

A key problem in producing mid-infrared optoelectronic and low-power electronic devices in the GaSb material system is the lack of substrates with appropriate surfaces for epitaxial growth. Chemical mechanical polishing (CMP) of GaSb results in surface damage accompanied by tenacious oxides that do not easily desorb. To overcome this, we have developed a process using gas cluster ion beams (GCIB) to remove surface damage and produce engineered surface oxides. In this paper, we present surface modification results on GaSb substrates using O2-, CF4/O2-, and HBr-GCIB processes. X-ray photoelectron spectroscopy of GCIB produced surface layers showed the presence of mixed Ga- and Sb-oxides, with mostly Ga-oxides at the interface, desorbing at temperatures ranging 530°C to 560°C. Cross-sectional transmission electron microscopy of molecular beam epitaxy grown GaSb/AlGaSb layers showed that GCIB surfaces yielded smooth defect free substrate to epi transitions as compared to CMP surfaces. Furthermore, HBr-GCIB surfaces exhibited neither dislocation layers nor discernable interfaces, indicating complete oxide desorbtion prior to epigrowth on a clean single crystal template. Atomic force microscopy of GCIB epilayers exhibited smooth surfaces with characteristic step-terrace formations comprising monatomic steps and wide terraces. The HBr-GCIB process can be easily adapted to a large scale manufacturing process for epi-ready GaSb.

Krishnaswami, Kannan; Shivashankar, Vangala; Dauplaise, Helen; Allen, Lisa; Dallas, Gordon; Bakken, Daniel; Bliss, David; Goodhue, William

2008-04-01T23:59:59.000Z

400

Epitaxial growth of metastable multiferroic AlFeO{sub 3} film on SrTiO{sub 3} (111) substrate  

SciTech Connect (OSTI)

GaFeO{sub 3}-type AlFeO{sub 3} is consisted of oxygen octahedra and tetrahedra containing Al and Fe ions and is known to have a non-centrosymmetric polar structure with space group Pna2{sub 1}. We tried to grow epitaxial GaFeO{sub 3}-type AlFeO{sub 3} films on SrTiO{sub 3} (111) substrates by pulsed laser deposition technique. Both the atomic arrangement of close-packed and the atomic distance of the substrate surface played important roles in stabilizing GaFeO{sub 3}-type AlFeO{sub 3} on the substrate. Piezoresponse force microscopy measurements clearly showed that GaFeO{sub 3}-type AlFeO{sub 3} films have ferroelectricity at room temperature. In addition, AlFeO{sub 3} film also showed pinched-like hysteresis loop with T{sub N}???317?K.

Hamasaki, Yosuke; Shimizu, Takao; Taniguchi, Hiroki; Taniyama, Tomoyasu; Yasui, Shintaro; Itoh, Mitsuru, E-mail: itoh.m.aa@m.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259-J2-19 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)

2014-02-24T23:59:59.000Z

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Observation of photoluminescence from Al1 xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy  

E-Print Network [OSTI]

Observation of photoluminescence from Al1 xInxN heteroepitaxial films grown by metalorganic vapor have observed photoluminescence of Al1 xInxN films. The films were grown on GaN by atmospheric pressure-temperature deposited AlN buffer layer. Photoluminescence, absorption, and x-ray diffraction measurements have shown

Wetzel, Christian M.

402

Coulomb excitation of 73Ga  

E-Print Network [OSTI]

The B(E2; Ii -> If) values for transitions in 71Ga and 73Ga were deduced from a Coulomb excitation experiment at the safe energy of 2.95 MeV/nucleon using post-accelerated beams of 71,73Ga at the REX-ISOLDE on-line isotope mass separator facility. The emitted gamma rays were detected by the MINIBALL-detector array and B(E2; Ii->If) values were obtained from the yields normalized to the known strength of the 2+ -> 0+ transition in the 120Sn target. The comparison of these new results with the data of less neutron-rich gallium isotopes shows a shift of the E2 collectivity towards lower excitation energy when adding neutrons beyond N = 40. This supports conclusions from previous studies of the gallium isotopes which indicated a structural change in this isotopical chain between N = 40 and N = 42. Combined with recent measurements from collinear laser spectroscopy showing a 1/2- spin and parity for the ground state, the extracted results revealed evidence for a 1/2-; 3/2- doublet near the ground state in 73 31Ga42 differing by at most 0.8 keV in energy.

J. Diriken; I. Stefanescu; D. Balabanski; N. Blasi; A. Blazhev; N. Bree; J. Cederkäll; T. E. Cocolios; T. Davinson; J. Eberth; A. Ekström; D. V. Fedorov; V. N. Fedosseev; L. M. Fraile; S. Franchoo; G. Georgiev; K. Gladnishki; M. Huyse; O. V. Ivanov; V. S. Ivanov; J. Iwanicki; J. Jolie; T. Konstantinopoulos; Th. Kröll; R. Krücken; U. Köster; A. Lagoyannis; G. Lo Bianco; P. Maierbeck; B. A. Marsh; P. Napiorkowski; N. Patronis; D. Pauwels; P. Reiter; M. Seliverstov; G. Sletten; J. Van de Walle; P. Van Duppen; D. Voulot; W. B. Walters; N. Warr; F. Wenander; K. Wrzosek

2010-10-13T23:59:59.000Z

403

GaInAsSb/A1GaAsSb/Sb Thermophotovoltaic Devices With an Internal Back-Surface Reflector Formed by Wafer Bonding  

SciTech Connect (OSTI)

A novel implementation for GAInAsSb/AlGaAsSb/GaSb TPV cells with an internal back-surface reflector (BSR) formed by wafer bonding to GaAs is demonstrated. The SiO{sub x}/Ti/Au internal BSR enhances optical absorption within the device, while the dielectric layer provides electrical isolation. This configuration has the potential to improve TPV device performance; is compatible with monolithic series-interconnection of TPV cells for building voltage; and can mitigate the requirements of filters used for front-surface spectral control. At a short-circuit density of 0.4 A/cm{sup 2}, the open-circuit voltage of a single TPV cell is 0.2 V, compared to 0.37 and 1.8 V for 2- and 10-junction series-interconnected TPV cells, respectively.

C.A. Wang; R.K. Huang; D.A. Shiau; M.K. Connors; P.G. Murphy; P.W. O'brien; A.C. Anderson; D.M. DePoy; G. Nichols; M.N. Palmasiano

2002-12-18T23:59:59.000Z

404

Charakterisierung und Präparation von GaN und Herstellung von In-Plane-Gate Transistoren in AlxGa1-xN/GaN Heterostrukturen.  

E-Print Network [OSTI]

??Gegenstand der Arbeit sind GaN-Volumenmaterial und AlxGa1-xN/GaN HEMTs (high electron mobility transistor), welche ein zweidimensionales Elektronengas (2DEG) besitzen. Die Materialien wurden durch elektrische Messungen, insbesondere… (more)

Ebbers, André

2003-01-01T23:59:59.000Z

405

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect (OSTI)

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

406

Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications  

DOE Patents [OSTI]

Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

2014-11-11T23:59:59.000Z

407

Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys  

Science Journals Connector (OSTI)

Using large (512-atom) pseudopotential supercell calculations, we have investigated the composition dependence of the momentum matrix element Mv,c for transitions between the valence-band maximum and the conduction-band minimum of three semiconductor alloys:?GaP1-xNx and GaAs1-xNx, exhibiting large chemical and size differences between their alloyed elements, and GaP1-xAsx, which is a weakly perturbed alloy. In the composition ranges where these alloys have a direct band gap, we find that (i) in GaP1-xAsx, Mv,c is large (like the virtual-crystal value) and nearly composition independent; (ii) in GaAs1-xNx, Mv,c is strongly composition dependent: large for small x and small for large x; and (iii) in GaP1-xNx, Mv,c is only slightly composition dependent and is significantly reduced relative to the virtual-crystal value. The different behavior of GaP1-xAsx, GaP1-xNx, and GaAs1-xNx is traced to the existence/absence of impurity levels at the dilute alloy limits: (a) there are no gap-level impurity states at the x?1 or x?0 limits of GaP1-xAsx, (b) an isolated As impurity in GaN (GaN?:As) has a deep band gap impurity level but no deep impurity state is found for N in GaAs, and (c) GaN?:P exhibits a P-localized deep band-gap impurity state and GaP?:N has an N-localized resonant state. The existence of deep levels leads to wave-function localization in real space, thus to a spectral spread in momentum space and to a reduction of Mv,c. These impurity levels are facilitated by atomic relaxations, as evident by the fact that unrelaxed GaN?:As and GaN?:P, show no deep levels, have extended wave functions, and have large interband transition elements.

L. Bellaiche; Su-Huai Wei; Alex Zunger

1997-10-15T23:59:59.000Z

408

High excitation power photoluminescence studies of ultra-low density GaAs quantum dots  

SciTech Connect (OSTI)

We fabricate GaAs epitaxial quantum dots (QDs) by filling of self-organized nanoholes in AlGaAs. The QDs are fabricated under optimized process conditions and have ultra-low density in the 10{sup 6} cm{sup ?2} regime. At low excitation power the optical emission of single QDs exhibit sharp excitonic lines, which are attributed to the recombination of excitonic and biexcitonic states. High excitation power measurements reveal surprisingly broad emission lines from at least six QD shell states.

Sonnenberg, D.; Graf, A.; Paulava, V.; Heyn, Ch.; Hansen, W. [Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)

2013-12-04T23:59:59.000Z

409

Corinna Cisneros, S.M. Golam Mortuza, and Soumik Banerjee School of Mechanical and Materials Engineering, Washington State University, Pullman, WA 99163  

E-Print Network [OSTI]

Engineering, Washington State University, Pullman, WA 99163 Organic Photovoltaic Solar Cells: A Molecular of fossil fuel resources has lead to global energy crisis with an increasing effort in the scientific community to develop renewable energy technologies. Solar cell technology has generated significant

Collins, Gary S.

410

Proc. of the ACM Int'l. Symp on Softw. Testing and Analysis, Seattle, WA, August 1994, pages 169184. Selecting Tests and Identifying Test Coverage Requirements for  

E-Print Network [OSTI]

of structural coverage crite­ ria. Our technique partitions an existing test suite into two subsets: testsProc. of the ACM Int'l. Symp on Softw. Testing and Analysis, Seattle, WA, August 1994, pages 169­184. Selecting Tests and Identifying Test Coverage Requirements for Modified Software* Gregg Rothermel and Mary

Rothermel, Gregg

411

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

412

Princeton Plasma Physics Lab - General Atomics (GA)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
413

Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um  

SciTech Connect (OSTI)

Selectively oxidized vertical cavity lasers emitting at 1294 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave at and above room temperature. The lasers employ two n-type Al{sub 0.94}Ga{sub 0.06}As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55 C. These lasers exhibit the longest wavelength reported to date for vertical cavity surface emitting lasers grown on GaAs substrates.

CHOQUETTE,KENT D.; KLEM,JOHN F.; FISCHER,ARTHUR J.; SPAHN,OLGA B.; ALLERMAN,ANDREW A.; FRITZ,IAN J.; KURTZ,STEVEN R.; BREILAND,WILLIAM G.; SIEG,ROBERT M.; GEIB,KENT M.; SCOTT,J.W.; NAONE,R.L.

2000-06-05T23:59:59.000Z

414

Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy  

SciTech Connect (OSTI)

Ti/Al/Ni/Au ohmic contacts were formed on heavily doped n{sup +} metal-polar GaN samples with various Si doping concentrations grown by molecular beam epitaxy. The contact resistivity (R{sub C}) and sheet resistance (R{sub sh}) as a function of corresponding GaN free carrier concentration (n) were measured. Very low R{sub C} values (<0.09 {Omega} mm) were obtained, with a minimum R{sub C} of 0.035 {Omega} mm on a sample with a room temperature carrier concentration of {approx}5 Multiplication-Sign 10{sup 19} cm{sup -3}. Based on the systematic study, the role of R{sub C} and R{sub sh} is discussed in the context of regrown n{sup +} GaN ohmic contacts for GaN based high electron mobility transistors.

Afroz Faria, Faiza; Guo Jia; Zhao Pei; Li Guowang; Kumar Kandaswamy, Prem; Wistey, Mark; Xing Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2012-07-16T23:59:59.000Z

415

Growth and properties of crystalline barium oxide on the GaAs(100) substrate  

SciTech Connect (OSTI)

Growing a crystalline oxide film on III-V semiconductor renders possible approaches to improve operation of electronics and optoelectronics heterostructures such as oxide/semiconductor junctions for transistors and window layers for solar cells. We demonstrate the growth of crystalline barium oxide (BaO) on GaAs(100) at low temperatures, even down to room temperature. Photoluminescence (PL) measurements reveal that the amount of interface defects is reduced for BaO/GaAs, compared to Al{sub 2}O{sub 3}/GaAs, suggesting that BaO is a useful buffer layer to passivate the surface of the III-V device material. PL and photoemission data show that the produced junction tolerates the post heating around 600?°C.

Yasir, M.; Dahl, J.; Lång, J.; Tuominen, M.; Punkkinen, M. P. J.; Laukkanen, P., E-mail: pekka.laukkanen@utu.fi; Kokko, K. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland)] [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Kuzmin, M. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland) [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); Korpijärvi, V.-M.; Polojärvi, V.; Guina, M. [Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere (Finland)] [Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere (Finland)

2013-11-04T23:59:59.000Z

416

Determining flow, recharge, and vadose zone drainage in an unconfined aquifer from groundwater strontium isotope measurements, Pasco Basin, WA  

E-Print Network [OSTI]

22 (8), 687-690, 1994. Bjornstad, B. N. , K. R. Fecht, and10,000 years at the top (Bjornstad et al. , 2001; Clague etare older than 750 ka (Bjornstad et al. , 2001). However,

Singleton, Michael J.; Maher, Katharine; DePaolo, Donald J.; Conrad, Mark E.; Dresel, P. Evan

2004-01-01T23:59:59.000Z

417

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

418

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

419

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

420

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices  

E-Print Network [OSTI]

Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices G. A. Umana transport J. Appl. Phys. 112, 123715 (2012) Characteristics of built-in polarization potentials Appl. Phys. Lett. 101, 243113 (2012) Thermal stability of the deep ultraviolet emission from Al

Krishna, Sanjay

422

ALS Chemistry Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ALS Chemistry Lab Print ALS Chemistry Labs The ALS Chemistry Labs are located in the User Support Building (15-130) and in Building 6 (6-2233)*. These spaces are dedicated for...

423

ALS Chemistry Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Safety Safety for Users ALS Chemistry Lab Print ALS Chemistry Labs The ALS Chemistry Labs are located in the User Support Building (15-130) and in Building 6 (6-2233)*. These...

424

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect (OSTI)

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

425

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

426

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction  

Science Journals Connector (OSTI)

We report a nondestructive large-area method to characterize dislocation formation at a highly lattice-mismatched interface. The analysis is based on x-ray diffraction and reciprocal space mapping using a standard lab-based diffractometer. We use this technique to identify and analyze a two-dimensional array of 90° misfit dislocations at a GaSb/GaAs interface. The full width at half maximum of the GaSb 004 reciprocal lattice point is shown to decrease with increasing GaSb epilayer thickness as expected from theoretical models. Based on these measurements the variation in the spatial dislocation frequency is calculated to be 1%.

Charles J. Reyner; Jin Wang; Kalyan Nunna; Andrew Lin; Baolai Liang; Mark S. Goorsky; D. L. Huffaker

2011-01-01T23:59:59.000Z

427

GaN–InGaN LED efficiency reduction from parasitic electron currents in p-GaN  

Science Journals Connector (OSTI)

Abstract This paper presents observations of a previously unidentified source of performance limitation for GaN–InGaN LED devices. While most studies focus on output saturation known as ‘current droop’ from InGaN layer effects, we show an alike influence from p-type GaN’s inherent background electron concentration. p-GaN material was investigated to confirm that, even though the material had an excess of holes, the background electrons were indeed present and were influencing the charge flow across device electrodes. This current does not cross LED heterojunctions but rather drifts toward its proximal device electrode, causing a source of heating while providing no carriers for light emitting recombination. The effects of this current were explored in an LED configuration, whose output showed weak efficiency at very low biases in addition to that from current droop. While the shortcoming under small currents has previously been attributed to electron tunneling across the junction, we propose that the background electrons inside p-GaN could be another explanation.

G. Togtema; V. Georgiev; D. Georgieva; R. Gergova; K.S.A. Butcher; D. Alexandrov

2015-01-01T23:59:59.000Z

428

Exciton relaxation and coupling dynamics in a GaAs/AlxGa1-xAs quantum well and quantum dot ensemble  

Science Journals Connector (OSTI)

Exciton inter- and intra-actions in a GaAs/AlGaAs quantum well (QW) and quantum dot (QD) ensemble are studied using optical two-dimensional Fourier transform spectroscopy. We measure population dynamics for times up to 300 ps and temperatures up to 50 K and observe biexponential decay for both QW and QD excitons, strong QW ? QD relaxation, and weak QD ? QW activation. The population dynamics are modeled using a system of rate equations that incorporate radiative and nonradiative decay, coupling between bright and dark exciton states, and QW ? QD coupling. The fast decay rates are attributed to exciton-bound hole spin flips between optically active and inactive states and are similar for the QW and QDs, indicating excitons are weakly localized in the QDs. The QW ? QD relaxation rate increases with temperature, and QD ? QW excitation is observed at temperatures ?35 K.

G. Moody; M. E. Siemens; A. D. Bristow; X. Dai; A. S. Bracker; D. Gammon; S. T. Cundiff

2011-06-27T23:59:59.000Z

429

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

430

Microporous Montmorillonites Expanded with Alumina Clusters and M[(?-OH)Cu(?-OCH2CH2NEt2)]6(ClO4)3, (M = Al, Ga, and Fe), or Cr[(?-OCH3)(?-OCH2CH2NEt2)CuCl]3 Complexes  

Science Journals Connector (OSTI)

Mossbauer results have indicated that only Fe3+ in octahedral coordination is present in the iron-containing bi-PILC samples (bi-PILC = bipillared interlayered clays). ... In contrast, the intermediate Al13-PILC structure is least affected when the more stable Cr complex is used. ... Bi-PILC materials containing 2.7?3.4% Cr stable to 500 °C have been obtained. ...

S. M. Thomas; J. A. Bertrand; M. L. Occelli; F. Huggins; S. A. C. Gould

1999-04-09T23:59:59.000Z

431

20121114 Riverton drinking wa...  

Office of Legacy Management (LM)

Where Does My Drinking Water Come From? Where Does My Drinking Water Come From? Riverton, Wyoming, Processing Site F A C T S H E E T ENERGY Legacy Management U.S. DEPARTMENT OF This fact sheet provides information about the Alternative Water Supply System and domestic wells at the Uranium Mill Tailings Radiation Control Act of 1978 Title I processing site at Riverton, Wyoming. The Riverton site is managed by the U.S. Department of Energy Office of Legacy Management. Where Is the Riverton Site? The former Riverton, Wyoming, Processing Site is in Fremont County, 2 miles southwest of the town of Riverton and within the boundaries of the Wind River Indian Reservation (Northern Arapaho and Eastern Shoshone). Why Is It a "Site"? A uranium- and vanadium-ore-processing mill operated on the property from 1958 to 1963. Milling operations created

432

SEATTLE, WA ctober 1974  

E-Print Network [OSTI]

nektol n t"c C08 ul \\.\\ t,,.. !" \\ tIn4 UVt'r I I d (l E riltal Inl \\\\ashmptcn, sprl .. lnti ill )f If

433

The Divergence of Art and Ideology in the Later Novels of Ngugi wa Thiong'o: A Critique  

E-Print Network [OSTI]

ut Pet als of Bl ood Ng ugi att empts to i ntegrate t woand s u bl i~a t e I t . Ng ugi's inabiU ty t o rationalize

Curtis, Lisa

1984-01-01T23:59:59.000Z

434

0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology  

SciTech Connect (OSTI)

Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures.

MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

2004-06-09T23:59:59.000Z

435

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a  

E-Print Network [OSTI]

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a Anna Fontcuberta i Morral,b and Harry, Pasadena, California 91125 Daniel J. Aiken Emcore Photovoltaics, Albuquerque, New Mexico 87123 Mark W. Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 19 March 2006; accepted 26

Atwater, Harry

436

Polarity determination for MOCVD growth of GaN on Si(111) by convergent beam electron diffraction[Metal Organic Chemical Vapor Deposition  

SciTech Connect (OSTI)

The polarity of laterally epitaxially overgrown (LEO) GaN on Si(111) with an AlN buffer layer grown by MOCVD has been studied by convergent beam electron diffraction (CBED). The LEO GaN was studied by cross-section and plan-view transmission electron microscopy (TEM). The threading dislocation density is less than 10{sup 8} cm{sup {minus}2} and no inversion domains were observed. CBED patterns were obtained at 200 kV for the <1 {bar 1} 00> zone. Simulation was done by many-beam solution with 33 zero-order beams. The comparison of experimental CBED patterns and simulated patterns indicates that the polarity of GaN on Si(111) is Ga face.

Zhao, L.; Marchand, H.; Fini, P.; Denbaars, S.P.; Mishra, U.K.; Speck, J.S.

2000-07-01T23:59:59.000Z

437

Development of a Bulk GaN Growth Technique for Low Defect Density, Large-Area Native Substrates  

Broader source: Energy.gov (indexed) [DOE]

the Electrochemical Solution the Electrochemical Solution Growth (ESG) Technique for Native GaN Substrates DOE Energy Storage & Power Electronics Research Program 30 September 2008 PI: Karen Waldrip Advanced Power Sources R&D, Dept 2546 PM: Stan Atcitty, John Boyes Sandia National Laboratories, Albuquerque, NM, 87185 Sponsor: Gil Bindewald, DOE Power Electronics & Energy Storage Program Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. Outline * Motivation * Existing GaN Growth Technique - Epitaxial Lateral Overgrowth - Methods for Growing Bulk GaN * Development of the Electrochemical Solution Growth Technique

438

ALS Chemistry Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Chemistry Lab Print ALS Chemistry Labs The ALS Chemistry Labs are located in the User Support Building (15-130) and in Building 6 (6-2233)*. These spaces are dedicated for...

439

E v e n t s & T o p i c s i n R e n e wa b l e E n...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

v e n t s & T o p i c s i n R e n e wa b l e E n e r g y & t h e E n v i r o n me n t i s s p o n s o r e d b y t h e P h o t o s y n t h e t i c A n t e n n a R e s e a r c h Ce n...

440

High-performance GaAs/AlGaAs optical phase modulators for microwave photonic integrated circuits  

SciTech Connect (OSTI)

A high-performance high-speed optical phase modulator for photonic integrated circuit (PIC) use is described. Integration of these optical phase modulators into a real system (compass) is also discussed. The optical phase modulators are based on depletion-edge translation and have experimentally provided optical phase shifts in excess of 60{degrees}/V{center_dot}mm with approximately 4 dB/cm loss while simultaneously demonstrating bandwidths in excess of 10 GHz.

Hietala, V.M.; Kravitz, S.H.; Armendariz, M.G.; Vawter, G.A.; Carson, R.F.

1994-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Investigation of photoexcited parallel conduction in GaAs/AlGaAs heterostructures in the quantum limit  

E-Print Network [OSTI]

', giving rise to the persistent photoconductivity (PPC). As the density of 2-DEG carriers in- creased the systematic shift of the quantum Hall plateaus and corresponding 40 12. 10. T = 75mK Iso= 500 nA 0 b cd c hl 6. Q. 0. 0. 0 1. 0 2. 0 3. 0 4... resistance between 0. 0 and 0. 3 T. 16, 2-DEG carrier density determined from SdH oscillations versus natural logarithm of photon dose at 75 mK. 17, (a) Deviation of the Hall resistance from quantized value at i = 4 plateau versus photon dose; (b...

Kobiela, Pawel Stanislaw

1986-01-01T23:59:59.000Z

442

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network [OSTI]

ASCR, Na Slovance 2, 182 21 Praha 8, Czech Republic 2Department of Physics, Texas A&M University, College Station, Texas 77843-4242, USA 3Department of Physics, University of Texas at Austin, Austin, Texas 78712-1081, USA 4School of Physics... and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom 5Institute of Physics ASCR, Cukrovarnick? 10, 162 53 Praha 6, Czech Republic #1;Received 6 September 2006; published 12 January 2007#2; A remarkable progress towards functional...

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

443

Cross-plane Seebeck coefficient of ErAs:InGaAs/InGaAlAs superlattices Gehong Zenga  

E-Print Network [OSTI]

American Institute of Physics. DOI: 10.1063/1.2433751 I. INTRODUCTION Thermoelectric materials can be used conversion devices depends on the thermoelectric figure of merit ZT of a material, which is defined as ZT=S2 thermoelectric material because of i enhancement in the power factor S2 due to the quantum confinement effect,1

Bowers, John

444

Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors  

E-Print Network [OSTI]

, Georgia State University, Atlanta, Georgia 30303, USA; bNDP Optronics LLC, Mableton, Georgia 30126, USA; c

Dietz, Nikolaus

445

Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1  

E-Print Network [OSTI]

, USA 2 NDP Optronics LLC, Mableton, Georgia 30126, USA 3 School of Electrical and Computer Engineering

Dietz, Nikolaus

446

Spontaneous coherence, kinetics and pattern formation in cold exciton gases in GaAs/AlGaAs coupled quantum wells  

E-Print Network [OSTI]

Chapter 6 Coherence . . . . . . . . . . . . .way to measure spatial coherence . . . . . . . . . 6.5exciton and optical coherence lengths 6.3.2 Geometrical

Yang, Sen

2009-01-01T23:59:59.000Z

447

Spontaneous coherence, kinetics and pattern formation in cold exciton gases in GaAs/AlGaAs coupled quantum wells  

E-Print Network [OSTI]

2006). [82] S. Yang, A.V. Mintsev, A.T. Hammack, L.V. Butov,L.S. Levitov, A.V. Mintsev, B.D. Simons, A.C. Gossard, D.S.2006). Sen Yang, A.V. Mintsev, A.T. Hammack, L.V. Butov, and

Yang, Sen

2009-01-01T23:59:59.000Z

448

SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications  

E-Print Network [OSTI]

for automotive fuel [1] and fuel cells [2] applications. There is great interest in detection of hydrogen sensors for the use in hydrogen-fueled automobiles and with proton- exchange membrane (PEM) and solid oxide fuel cells for monitoring leakage of hydrogen storage equipment and fuel tanks for spacecraft and hydrogen fuel cell

Florida, University of

449

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

450

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

451

STATEMENT OF CONSIDERATIONS REQUEST BY CLIPPER WINDPOWER LLC ET AL. FOR AN ADVANCE WAIVER OF  

Broader source: Energy.gov (indexed) [DOE]

CLIPPER WINDPOWER LLC ET AL. FOR AN ADVANCE WAIVER OF CLIPPER WINDPOWER LLC ET AL. FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PA TENT RIGHTS UNDER DOE AW ARD NO . DE-EE0005 l 4 l ; W(A) 2012-020, AND AN IDENTIFIED WAIVER OF CERTAIN INVENTIONS ALREADY IDENTIFIED Clipper Windpower, LLC ("Clipper") has requested a waiver of domestic and foreign patent rights of the United States of America in all subject inventions arising from its participation under the above referenced grant entitled "Novel Low Cost, High Reliability Wind Turbine Drivetrain." Clipper has further requested a waiver of domestic and foreign patents of the United States of America in all subject inventions arising from the participation of its subcontractors United Technologies Research Center ("UTRC") and Hamilton Sundstrand. Each of Clipper,

452

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network [OSTI]

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

453

Pseudomorphic growth of InAs on misoriented GaAs for extending quantum cascade laser wavelength  

SciTech Connect (OSTI)

The authors have studied the impact of epilayer strain on the deposition of InAs/GaAs on (100) and (111)B with 2° offset toward<2-1-1> surfaces. Consequences of a 7% lattice mismatch between these orientations in the form of three-dimensional growth are less apparent for (111)B with 2° offset toward<2-1-1> surfaces compared to (100). By exploring a range of molecular beam epitaxy process parameters for InAs/GaAs growth and utilizing scanning electron microscopy, atomic force microscopy, and Raman spectroscopy to evaluate the quality of these strained layers, the authors develop empirical models that describe the influence of the process conditions in regards to surface roughness with >92% accuracy. The smoothest InAs/GaAs samples demonstrated average surface roughness of 0.08 nm for 10 ?m{sup 2} areas, albeit at very low deposition rates. The authors have found the most important process conditions to be substrate temperature and deposition rate, leading us to believe that controlling diffusion length may be the key to reducing defects in severely strained structures. InGaAs/AlGaAs quantum cascade laser structures were also produced on (111)B with 2° offset toward<2-1-1> to take advantage of the piezoelectric effect, and the modified laser transitions due to these effects were observed.

Meyer, Charles; Cheng, Emily; Grayer, Justin; Mueller, David; Triplett, Gregory; Roberts, Denzil [Department of Electrical and Computer Engineering, University of Missouri, 349 Engineering Building West, Columbia, Missouri 65201 (United States)] [Department of Electrical and Computer Engineering, University of Missouri, 349 Engineering Building West, Columbia, Missouri 65201 (United States); Graham, Samuel [Georgia Institute of Technology, Woodruff School of Mechanical Engineering, Atlanta, Georgia 30332 (United States)] [Georgia Institute of Technology, Woodruff School of Mechanical Engineering, Atlanta, Georgia 30332 (United States)

2013-11-15T23:59:59.000Z

454

Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes  

SciTech Connect (OSTI)

The gain and photoresponse characteristics have been numerically studied for back-illuminated separate absorption and multiplication (SAM) GaN avalanche photodiodes (APDs). The parameters of fundamental models are calibrated by simultaneously comparing the simulated dark and light current characteristics with the experimental results. Effects of environmental temperatures and device dimensions on gain characteristics have been investigated, and a method to achieve the optimum thickness of charge layer is obtained. The dependence of gain characteristics and breakdown voltage on the doping concentration of the charge layer is also studied in detail to get the optimal charge layer. The bias-dependent spectral responsivity and quantum efficiency are then presented to study the photoresponse mechanisms inside SAM GaN APDs. It is found the responsivity peak red-shifts at first due to the Franz-Keldysh effect and then blue-shifts due to the reach-through effect of the absorption layer. Finally, a new SAM GaN/AlGaN heterojunction APD structure is proposed for optimizing SAM GaN APDs.

Wang, Xiaodong; Pan, Ming; Hou, Liwei; Xie, Wei [No. 50 Research Institute of China Electronics Technology Group Corporation, 200331 Shanghai (China); Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Xu, Jintong; Li, Xiangyang; Chen, Xiaoshuang, E-mail: xschen@mail.sitp.ac.cn; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai (China)

2014-01-07T23:59:59.000Z

455

Intermediate-band material based on GaAs quantum rings for solar cells  

SciTech Connect (OSTI)

The intermediate-band concept is invoked to explain the photoresponse spectra obtained for unbiased devices fabricated from GaAs quantum rings grown by a droplet epitaxy technique on lattice-matched Al{sub 0.3}Ga{sub 0.7}As barriers. The photoresponse spectra where measured at room temperature in the visible-near-infrared spectral range. The presence of the intermediate band in the device active region is confirmed by measuring the mid-infrared photoresponse, which is attributed to the intersubband transitions in the conduction band. The photocurrent was measured at room temperature and found to be about four orders of magnitude larger than the dark current in the voltage range of {+-} 4.0 V.

Wu Jiang; Shao Dali [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Li Zhenhua; Kunets, Vasyl P.; Wang Zhiming; Salamo, G. J. [Institute of Nanoscale Materials Science and Engineering, Fayetteville, Arkansas 72701 (United States); Manasreh, M. O. [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Institute of Nanoscale Materials Science and Engineering, Fayetteville, Arkansas 72701 (United States)

2009-08-17T23:59:59.000Z

456

Hot-carrier cooling in GaAs: Quantum wells versus bulk  

Science Journals Connector (OSTI)

Hot-electron cooling dynamics in photoexcited bulk and quantum-well GaAs structures were determined using time-correlated single-photon counting of photoluminescence (PL) decay. Hot-electron cooling curves were generated from analyses of the time-resolved PL spectra. The time constant characterizing the hot-electron energy-loss rate, ?avg, was then determined, taking into account electron degeneracy and the time dependence of the quasi-Fermi-level. This analysis was also applied to earlier data obtained by Pelouch et al. with the same samples, but based on PL up-conversion experiments with carrier density) to bulk GaAs when this density is above a critical value. This critical density was found to range from high 1017 to low 1018 cm-3, depending upon the experimental technique; at the highest carrier densities, values of ?avg for quantum wells were found to be many hundreds of ps.

Y. Rosenwaks; M. C. Hanna; D. H. Levi; D. M. Szmyd; R. K. Ahrenkiel; A. J. Nozik

1993-11-15T23:59:59.000Z

457

Pressure-Induced Transformations of the Low-Cristobalite Phase of GaPO4  

Science Journals Connector (OSTI)

Tsuneyuki et al. predicted a new high pressure phase of silica using a molecular dynamics calculation; this calculation was novel in that it predicted a new crystal structure using only a knowledge of the chemical composition [Nature (London) 339, 209 (1989)]. We report that the low-cristobalite phase of GaPO4 undergoes a pressure-induced transition at 15.9 GPa to this novel phase, which contains tetrahedral and octahedral coordination shells of oxygen atoms around the phosphorus and gallium atoms, respectively. This pressure-induced coordination change in GaPO4 verifies a mechanism proposed for the tetrahedral-to-octahedral coordination change in minerals that occurs in the transition zone between the upper and lower mantle.

Julie L. Robeson; Robert R. Winters; William S. Hammack

1994-09-19T23:59:59.000Z

458

STATEM!NT''OF CONSIDEAAT10NS REQUEST n:~!:)lHi/",!!,'fCORPORArIQN FO~ ANADVANClWA1VER OF DOMESTIC AND FOREIGN  

Broader source: Energy.gov (indexed) [DOE]

STATEM!NT''OF CONSIDEAAT10NS STATEM!NT''OF CONSIDEAAT10NS REQUEST n:~!:)lHi/",!!,'fCORPORArIQN FO~ ANADVANClWA1VER OF DOMESTIC AND FOREIGN DOE PROPOSAL NO.OE-EE0000412 W(A} 2009-:060 The OhlipC1'!ve of this project Is the and comt'nercialization of a two-phase soluttofrfQf USe with The 1 lM,C'l_""""P H'tn(;lPI'" PJJ1'l.nn""". refrig1':'rant tooling solution provides certain improvements compared to conventional air-<:ooling syslems and water-cooling systems, The totalantfetpated cost the is $901,678 with the Petitl(};l)er approximately 19.% cost sm:tre, $262,191. Thiswaive(is contingent upo.n the Petitioner rrH~intaining the foregoing cost over tneCQUfse the grant As in its wai'\l\;f petition, the ~etitfoner isa leading global supplier of air conditioning and

459

Low Efficiency Droop Green Nano-Pyramid {10 -11} InGaN/GaN Multiple Quantum Well LED  

Science Journals Connector (OSTI)

We report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {10 1} nano-pyramid facets. The device physics...

Cheng, Yuh-Jen; Chang, Shih-Pang; Lin, Da-Wei; Kuo, Hao-chung; Xiong, Kang-lin

460

InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting  

Science Journals Connector (OSTI)

Hydrogen generation through water splitting by n-InGaN working electrodes with bias generated from GaAs solar cell was studied. Instead of using an external bias provided by power...

Liu, Shu-Yen; Sheu, J K; Lin, Yu-Chuan; Chen, Yu-Tong; Tu, S J; Lee, M L; Lai, W C

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Seeded growth of AlN bulk crystals in m-and c-orientation , R. Collazo a,, R.F. Dalmau b  

E-Print Network [OSTI]

. Introduction Single crystal AlN is a promising substrate for nitride-based optoelectronic devices exploiting efficiency of optoelectronic devices [8]. Second, AlN and GaN have different valence band structures caused in higher luminous efficiency of deep UV optoelectronic devices. Although the growth of III-nitride thin

Dietz, Nikolaus

462

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

463

Abstract--Utilizing the high index contrast of a deep-etched, non-selectively oxidized AlGaAs/InAlGaAs GRINSCH  

E-Print Network [OSTI]

-etching the SiNx via reactive ion etching (RIE) in a CF4/O2 plasma, and subsequently removed by a Cr etch (both waveguide cladding and core with QW). The SiNx mask is then selectively removed in RIE with CF4/O2

Bowers, John

464

Doping of MBE grown cubic GaN on 3C-SiC (001) by CBr4 ,E. Tschumak1  

E-Print Network [OSTI]

source. The CBr4 beam equivalent pressure was established by a needle valve and was varied between 2x10 has a very low diffusion coefficient [3]. It is also known from p-doping in (Al)GaAs that carbon4 beam equivalent pressure (BEP) was established by a needle valve and was varied between 2x10

As, Donat Josef

465

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

466

Science DMZ for ALS  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ALS Science Engagement Move your data Programs & Workshops Science Requirements Reviews Case Studies OSCARS Case Studies Science DMZ Case Studies Science DMZ @ UF Science DMZ @ CU...

467

Flüssiger Wasserstoff als Kraftstoff  

Science Journals Connector (OSTI)

Seit mehr als hundert Jahren stellen Kohlenwasserstoffe aus Rohöl fast ausschließlich die Basis für alle im Verkehr verwendeten Kraftstoffe dar. Ein Verkehr ohne Benutzung von Kraftstoffen auf Kohlenwasserstof...

Prof. Dr. Ing. habil. Walter Peschka

1984-01-01T23:59:59.000Z

468

Howes et al. Reply  

E-Print Network [OSTI]

Howes et al. Reply to Comment on "Kinetic Simulations of Magnetized Turbulence in Astrophysical Plasmas" arXiv:0711.4355

G. G. Howes; S. C. Cowley; W. Dorland; G. W. Hammett; E. Quataert; A. A. Schekochihin; T. Tatsuno

2008-12-12T23:59:59.000Z

469

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures  

SciTech Connect (OSTI)

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap E{sub g} and the spin orbit splitting energy ?{sub so}, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which ?{sub so},> E{sub g} occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.

Hild, K.; Batool, Z.; Jin, S. R.; Hossain, N.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Hosea, T. JC. [1 Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK and also, Ibnu Sina Institute, Universiti Teknologi Malaysia, Johor Bahru, 81310 (Malaysia); Lu, X. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6, Canada and now VarianSemiconductor Equipment Associates, Gloucester, MA 01930 (United States); Tiedje, T. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6 (Canada)

2013-12-04T23:59:59.000Z

470

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

471

Multiband GaNAsP Quaternary Alloys  

SciTech Connect (OSTI)

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

472

Implantation of carbon in GaAs  

SciTech Connect (OSTI)

Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.

Moll, A.J.

1992-03-01T23:59:59.000Z

473

O?[]O? nuclear ?-decay of ?²Ga  

E-Print Network [OSTI]

The branching ratio for the ?-Decay of ?²Ga to the first excited O? state in ?²Zn has been measured. It is possible to use this branching ratio to test the theoretical method of calculating the [] component of the charge correction term [], which...

Hyman, Bruce Carl

2012-06-07T23:59:59.000Z

474

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect (OSTI)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

475

Science DMZ for ALS  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ALS ALS About ESnet Overview ESnet Staff Governance Our Network Case Studies OSCARS Case Studies Science DMZ Case Studies Science DMZ CU Science DMZ Penn State & VTTI Science DMZ NOAA Science DMZ NERSC Science DMZ ALS Multi-facility Workflow LCLS ESnet Strategic Plan ESnet Organizational Chart ESnet History Science Requirements Careers Contact Us Technical Assistance: 1 800-33-ESnet (Inside the US) 1 800-333-7638 (Inside the US) 1 510-486-7600 (Globally) 1 510-486-7607 (Globally) Report Network Problems: trouble@es.net Provide Web Site Feedback: info@es.net Science DMZ for ALS Many beamline scientists at Berkeley Lab's Advanced Light Source (ALS) are or will be experiencing slower network speeds because of instrument upgrades. These new instruments, or more specifically detectors, are

476

Preparation of Optoelectronic Devices Based on AlN/AlGaN Superlattices M. Holtz,a,b  

E-Print Network [OSTI]

of QDs also suggest strategies for improving the efficiency of optoelectronic devices through vectorial

Holtz, Mark

477

Self-Assembled Monolayers of Alkylphosphonic Acid on GaN Substrates  

Science Journals Connector (OSTI)

In addition to their applications for short-wavelength optoelectronic and high-power electronics, group III nitrides (AlN, GaN, and InN) have been employed as components of chemical and biological sensors for gas and solution samples. ... (27) In the basic solution, ?water decreased quickly to reach a smaller plateau value, probably reflecting the electrostatic repulsion between the deprotonated ODPA and negatively charged gallium oxide surface(46) in addition to the higher solubility of deprotonated ODPA in more basic solution. ... Gallium nitride is a wide band gap semiconductor that demonstrates a unique set of optical and electrical properties as well as aqueous stability and biocompatibility. ...

Takashi Ito; Sarah M. Forman; Chundi Cao; Feng Li; Charles R. Eddy, Jr.; Michael A. Mastro; Ronald T. Holm; Richard L. Henry; Keith L. Hohn; J. H. Edgar

2008-06-04T23:59:59.000Z

478

Department of Political Science Box 353530 University of Washington Seattle, WA 98195-3530 phone: (206) 543-2780 fax: (206) 685-2146 www.polisci.washington.edu  

E-Print Network [OSTI]

Department of Political Science · Box 353530 · University of Washington · Seattle, WA 98195-3530 phone: (206) 543-2780 · fax: (206) 685-2146 · www.polisci.washington.edu Highlights Political science rating in the Princeton Review 2010 list of "great schools to study political science." The department

Anderson, Richard

479

Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition  

E-Print Network [OSTI]

Seebeck coefficient and resistance measurement system for thermoelectric materials in the thin diskInN alloy on GaN as excellent material candidate for thermoelectric application. © 2010 American Institute-nitride alloys have shown promising results for thermoelectric applications,20­30 in particular for materi- als

Gilchrist, James F.

480

A novel approach for the improvement of open circuit voltage and fill factor of InGaAsSb/GaSb thermophotovoltaic cells  

SciTech Connect (OSTI)

Heterojunction n-Al{sub 0.25}Ga{sub 0.75}As{sub 0.02}Sb{sub 098}/p-In{sub 0.16}Ga{sub 0.84}As{sub 0.04}Sb{sub 0.96} thermophotovoltaic (TPV) cells were grown by molecular-beam epitaxy on n-GaSb-substrates. In the spectral range from 1 {micro}m to 2.1 {micro}m these cells, as well as homojunction n-p-In{sub 0.16}Ga{sub 0.84}As{sub 0.04}Sb{sub 0.96} cells, have demonstrated internal quantum efficiencies exceeding 80%, despite about a 200 meV barrier in the conduction band at the heterointerface. Estimation shows that the thermal emission of the electrons photogenerated in p-region over this barrier can provide high efficiency for hetero-cells if the electron recombination time in p-In{sub 0.16}Ga{sub 0.84}As{sub 0.04}Sb{sub 0.96}is longer than 10 ns. Keeping the same internal efficiency as homojunction cells, hetero-cells provide a unique opportunity to decrease the dark forward current and thereby increase open circuit voltage (V{sub {proportional_to}}) and fill factor at a given illumination level. It is shown that the decrease of the forward current in hetero-cells is due to the lower recombination rate in n-type wider-bandgap space-charge region and to the suppression of the hole component of the forward current. The improvement in V{sub {proportional_to}} reaches 100% at illumination level equivalent to 1 mA/cm{sup 2} and it decreases to 5% at the highest illumination levels (2--3 A/cm{sup 2}), where the electron current component dominates in both the homo- and heterojunction cells. Values of V{sub {proportional_to}} as high as 310 meV have been obtained for a hetero-cell at illumination levels of 3 A/cm{sup 2}. Under this condition, the expected fill factor value is about 72% for a hetero-cell with improved series resistance. The heterojunction concept provides excellent prospects for further reduction of the dark forward current in TPV cells.

Garbuzov, D.Z.; Martinelli, R.U.; Khalfin, V.; Lee, H.; Morris, N.A.; Taylor, G.C.; Connolly, J.C. [Sarnoff Corp., Princeton, NJ (United States); Charache, G.W.; DePoy, D.M. [Lockheed-Martin, Inc., Schenectady, NY (United States)

1997-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
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481

ALS Beamlines Directory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ALS Beamlines Directory Print ALS Beamlines Directory Print Beamlines, Parameters, Contact Information, and Schedules Download a high-resolution version of the ALS Beamclock. See Beamclock to view the ALS energy-related beamlines beamclock. Beamline Parameters Beamline and endstation technical information is available through the links below. Unless otherwise noted, all beamlines are currently operational. Individual beamline schedules are posted when available. Please contact the responsible beamline scientist for additional schedule information. When calling from off-site, all beamline (BL) phone numbers that begin with a "2" are preceded by 495- (i.e., 495-2014); all others are preceded by 486-. Beamline Number Source Technique/ Group Name Energy Range Beamline Contact Schedule/BL Phone

482

ALS Beamlines Directory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ALS Beamlines Directory Print ALS Beamlines Directory Print Beamlines, Parameters, Contact Information, and Schedules Download a high-resolution version of the ALS Beamclock. See Beamclock to view the ALS energy-related beamlines beamclock. Beamline Parameters Beamline and endstation technical information is available through the links below. Unless otherwise noted, all beamlines are currently operational. Individual beamline schedules are posted when available. Please contact the responsible beamline scientist for additional schedule information. When calling from off-site, all beamline (BL) phone numbers that begin with a "2" are preceded by 495- (i.e., 495-2014); all others are preceded by 486-. Beamline Number Source Technique/ Group Name Energy Range Beamline Contact Schedule/BL Phone

483

ALS User Meeting Archives  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ALS User Meeting Archives ALS User Meeting Archives Past User Meeting Agendas, Workshops, and Awards Year Agenda Workshops David A. Shirley (Science) Klaus Halbach (Instrumentation) Tim Renner (Service) 2012 2012 User Meeting Agenda 2012 User Meeting Workshops 2012 ALS User Meeting Awards Carl Percival, Dudley Shallcross, Craig Taatjes and David Osborn (Sandia), for making the first direct measurements of the reactions of Criegee intermediates, and showing that their impact on tropospheric chemistry and climate may be substantially greater than previously assumed. 2012 ALS User Meeting Awards Jeff Dickert and Simon Morton of Berkeley Lab's Physical Biosciences Division for the invention and implementation of the Compact Variable Collimator (CVC), which has led to a dramatic increase in productivity of protein crystallography.

484

Hacking als Grenzüberschreitung  

Science Journals Connector (OSTI)

In der Vergangenheit hat es sich als nützlich erwiesen, am Anfang eines Vortrages erst einmal ein paar Worte zu dem Verein zu verlieren, in dessen Vorstand ich mitwirke. Der Chaos Computer Club (CCC) ist viele...

Frank Simon

1994-01-01T23:59:59.000Z

485

ALS Staff Photo  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Staff Photo Print On May 14, 2013, members of ALS staff posed for a group photo in front of the dome. A hi-res version can be downloaded here. The last staff photo was taken in...

486

Flachglas Als Baustoff  

Science Journals Connector (OSTI)

Der Werkstoff Glas bezeichnet ein Schmelzprodukt, das in der Natur als erstarrte vulkanische Schmelze vorkommt und dem Mensch bereits vor 5000 Jahren für die Herstellung von Schmuck und Werkstücken diente. Im ...

2007-01-01T23:59:59.000Z

487

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

488

Monolithic integration of GaAs and h~~~~Ga~.~Aslasers by molecular epitaxy on GaAs  

E-Print Network [OSTI]

where the thick cladding layer below the active laser region acts as a buffer layer to-yield comparable epitaxial regrowth of Ino.aGaesAs lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the -first time- to monolithically integrate these two lasers emitting near 1

489

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect (OSTI)

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

490

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

491

Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN  

Science Journals Connector (OSTI)

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN...

Yu, Chun-Ta; Lai, Wei-Chih; Yen, Cheng-Hsiung; Hsu, Hsu-Cheng; Chang, Shoou-Jinn

2014-01-01T23:59:59.000Z

492

In: Proceedings of the 1995 International environmental conference; 1995 May 7-10; Atlanta, GA. Atlanta, GA: TAPPI PRESS: 445-448; 1995.  

E-Print Network [OSTI]

. Atlanta, GA: TAPPI PRESS: 445-448; 1995. ENVIRONMENTALLY SOUND ALTERNATIVES FOR UPGRADING MIXED OFFICE

Abubakr, Said

493

Surface Science Analysis of GaAs Photocathodes Following Sustained...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, strained super-lattice GaAs photocathode samples, removed from the CEBAF...

494

P-type doping of GaN  

SciTech Connect (OSTI)

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Wong, R.K.

2000-04-10T23:59:59.000Z

495

Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m  

SciTech Connect (OSTI)

The spectral-kinetic properties of heterostructures with GaAs/GaAsSb-based and GaAsSb/InGaAs/GaAs-based quantum wells, emitting in the range of 1.0-1.2 {mu}m are studied with picosecond and nanosecond temporal resolution. Intense photoluminescence in the GaAsSb/InGaAs/GaAs structure, as well as an increase in the photoluminescence wavelength by a factor of 2.5 and a shift of the location of the maximum of the peak ({approx}100 meV) to the longer-wavelength region were observed up to room temperature. It is established that as the molar fraction of Sb and the thickness of the InGaAs layer increase, the energy of the fundamental transition decreases by a factor of 140 meV compared with the GaAsSb/InGaAs/GaAs structure with a lower Sb content and a smaller thickness of the InGaAs layer. At 300 K, the emission wavelength of such a structure was 1.18 {mu}m. In addition, an increase in the thickness of the InGaAs layer led to an increase in the room-temperature photoluminescence intensity by a factor of 60, which is associated with a decrease in the energy of the fundamental state for electrons in the InGaAs layer and, consequently, to larger electron localization and smaller temperature quenching of photoluminescence.

Morozov, S. V., E-mail: more@ipm.sci.-nnov.ru; Kryzhkov, D. I.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Vikhrova, O. I. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)] [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

2013-11-15T23:59:59.000Z

496

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots  

SciTech Connect (OSTI)

Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous laser irradiation. The time constants varied from tens of minutes to several hours, depending on the applied laser power. Based on the spectral evolution, it was concluded that the observed phenomenon should originate from laser induced structural damage and a sustained increase of non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay dynamics at different laser powers, it is argued that there should exist other processes that hinder PL degradation at a high laser power.

Zhang Hongyi; Chen Yonghai; Zhou Xiaolong; Jia Yanan; Ye Xiaoling; Xu Bo; Wang Zhanguo [Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2013-05-07T23:59:59.000Z

497

Band gap tuning and optical absorption in type-II InAs/GaSb mid infrared short period superlattices: 14 bands K Dot-Operator p study  

SciTech Connect (OSTI)

The MBE growth of short-period InAs/GaSb type-II superlattice structures, varied around 20.5 A InAs/24 A GaSb were [J. Applied physics, 96, 2580 (2004)] carried out by Haugan et al. These SLs were designed to produce devices with an optimum mid-infrared photoresponse and a sharpest photoresponse cutoff. We have used a realistic and reliable 14-band k.p formalism description of the superlattice electronic band structure to calculate the absorption coefficient in such short-period InAs/GaSb type-II superlattices. The parameters for this formalism are known from fitting to independent experiments for the bulk materials. The band-gap energies are obtained without any fitting parameters, and are in good agreement with experimental data.

AbuEl-Rub, Khaled M. [Department of Applied Physical Sciences, Jordan University of Science and Technology Irbid, 21141 (Jordan)

2012-09-06T23:59:59.000Z

498

Transition to a Virtually Incompressible Oxide Phase at a Shock Pressure of 120 GPa (1.2 Mbar): Gd3Ga5O12  

Science Journals Connector (OSTI)

Cubic, single-crystal, transparent Gd3Ga5O12 has a density of 7.10??g/cm3, a Hugoniot elastic limit of 30 GPa, and undergoes a continuous phase transition from 65 GPa to a quasi-incompressible (QI) phase at 120 GPa. Only diamond has a larger Hugoniot elastic limit. The QI phase of Gd3Ga5O12 is more incompressible than diamond from 170 to 260 GPa. Electrical conductivity measurements indicate the QI phase has a band gap of 3.1 eV. Gd3Ga5O12 can be used to obtain substantially higher pressures and lower temperatures in metallic fluid hydrogen than was achieved previously by shock reverberation between Al2O3 disks.

T. Mashimo, R. Chau, Y. Zhang, T. Kobayoshi, T. Sekine, K. Fukuoka, Y. Syono, M. Kodama, and W. J. Nellis

2006-03-17T23:59:59.000Z

499

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect (OSTI)

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

500

ALS in the News  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

feed-image feed-image Digg: ALSBerkeleyLab Facebook Page: 208064938929 Flickr: advancedlightsource Twitter: ALSBerkeleyLab YouTube: AdvancedLightSource Home About the ALS ALS in the News ALS in the News Roman Seawater Concrete Holds the Secret to Cutting Carbon Emissions Print Tuesday, 04 June 2013 00:00 An international team led by Paulo Monteiro of the Advanced Light Source and UC Berkeley has analyzed samples of Roman concrete from harbor installations that have survived 2,000 years of chemical attack and wave action, "one of the most durable construction materials on the planet," says UC Berkeley's Marie Jackson, a leading member of the team. Says Monteiro, "It's not that modern concrete isn't good, but manufacturing Portland cement accounts for seven percent of the carbon dioxide that industry puts into the air." The carbon footprint of Roman concrete, made from lime, volcanic ash, and seawater, is much smaller.