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1

AlGaN/GaN-based power semiconductor switches  

E-Print Network (OSTI)

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

2

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures  

Science Conference Proceedings (OSTI)

Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

2012-12-24T23:59:59.000Z

3

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

4

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells  

E-Print Network (OSTI)

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells I. Friel, C online 20 June 2005 An ultraviolet electroabsorption modulator based on AlGaN/GaN quantum wells is demonstrated. Enhanced excitonic absorption in the quantum wells at around 3.48 eV was achieved using

Moustakas, Theodore

5

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

6

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents (OSTI)

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

7

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT  

Science Conference Proceedings (OSTI)

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

Lenka, T. R., E-mail: trlenka@gmail.com; Panda, A. K., E-mail: akpanda62@hotmail.com [National Institute of Science and Technology, Palur Hills (India)

2011-05-15T23:59:59.000Z

8

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

Science Conference Proceedings (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

9

AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy  

SciTech Connect

The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

C.A. Wang; C.J. Vineis; D.R. Calawa

2002-02-13T23:59:59.000Z

10

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures  

Science Conference Proceedings (OSTI)

GaAsBi/GaAs/AlGaAs separate confinement heterostructures are grown using an asymmetric temperature profile due to the low optimal growth temperature of GaAsBi; the bottom AlGaAs barrier is grown at 610 Degree-Sign C, while the GaAsBi quantum well and the top AlGaAs barrier are grown at 320 Degree-Sign C. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that this approach results in samples with excellent structural and optical properties. The high quality of the low temperature AlGaAs barrier is attributed to the presence of Bi on the surface as indicated by a (1 Multiplication-Sign 3) surface reconstruction persisting throughout the low temperature growth.

Fan Dongsheng; Yu Shuiqing [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Zeng Zhaoquan; Hu Xian; Dorogan, Vitaliy G.; Li Chen; Benamara, Mourad; Hawkridge, Michael E.; Mazur, Yuriy I.; Salamo, Gregory J. [Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Johnson, Shane R. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States); Wang, Zhiming M. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

2012-10-29T23:59:59.000Z

11

Radiation Hard AlGaN Detectors and Imager  

Science Conference Proceedings (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

12

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells  

E-Print Network (OSTI)

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells Marcus Eickhoff* and Dieter Suter, nanometer-sized quantum wells possible with excellent sensitivity and selectivity while avoiding.60.-k; 78.55.Cr; 78.67.De Keywords: ODNMR; Pulsed excitation; Quantum well; GaAs 1. Introduction Nuclear

Suter, Dieter

13

Optical injection and coherent control of a ballistic charge current in GaAsAlGaAs quantum wells  

E-Print Network (OSTI)

Optical injection and coherent control of a ballistic charge current in GaAs?AlGaAs quantum wells of Hache´ et al.,2,3 but in this article we report injection into the plane of GaAs/AlGaAs quantum wells specific to quantum wells. Although we expect the underlying physics of injection and control of currents

Sipe,J. E.

14

Free carrier accumulation at cubic AlGaN/GaN heterojunctions  

Science Conference Proceedings (OSTI)

Cubic Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructures were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. A profile of the electrostatic potential across the cubic-AlGaN/GaN heterojunction was obtained using electron holography in the transmission electron microscope. The experimental potential profile indicates that the unintentionally doped layers show n-type behavior and accumulation of free electrons at the interface with a density of 5.1 x 10{sup 11}/cm{sup 2}, about one order of magnitude less than in wurtzite AlGaN/GaN junctions. A combination of electron holography and cathodoluminescence measurements yields a conduction-to-valence band offset ratio of 5:1 for the cubic AlGaN/GaN interface, which also promotes the electron accumulation. Band diagram simulations show that the donor states in the AlGaN layer provide the positive charges that to a great extent balance the two-dimensional electron gas.

Wei, Q. Y.; Li, T.; Huang, J. Y.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Tschumak, E.; Zado, A.; As, D. J. [Department of Physics, Universitaet Paderborn, D-33098 Paderborn (Germany)

2012-04-02T23:59:59.000Z

15

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors  

E-Print Network (OSTI)

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

Lu, Bin

16

Phonon Knudsen flow in GaAs/AlAs superlattices  

DOE Green Energy (OSTI)

The measured in-plane thermal conductivity, {delta}{sub SL} of GaAs/AlAs superlattices with even moderate layer thicknesses are significantly smaller than the weighted average, {delta}{sub l} = 67 W/Km, of the bulk GaAs and AlAs conductivities. One expects a suppression of the thermal conductivity to that of an actual Al{sub 0.5}Ga{sub 0.5}As alloy when the thickness of the GaAs and AlAs layers approaches that of a single monolayer. However, the observed superlattice thermal conductivity remains suppressed even at layer thickness {approx_gt} 10 nm. The low thermal conductivities, and very high mobilities, make n-doped GaAs/AlAs superlattices attractive possibilities for thermoelectric devices. With Molecular-Beam-Epitaxial grown GaAs/AlAs superlattices one can expect the individual GaAs and AlAs layers to be extremely clean. Defect and/or alloy scattering is limited to be near the heterostructure interfaces. The authors estimate the room-temperature phonon mean-free-path to be 42 (22) nm for the longitudinal (transverse) mode and thus comparable to or smaller than the layer thicknesses. Thus they expect an important phonon scattering at the interfaces. They study this phonon scattering at the superlattice interfaces assuming a Knudsen flow characterized by diffusive scattering. The solid curve in the figure shows the Knudsen-flow theory estimated for the superlattice thermal conductivity which shows a significant reduction when the layer thickness is shorter than the estimated phonon mean free paths.

Hyldgaard, P.; Mahan, G.D. [Oak Ridge National Lab., TN (United States). Solid State Div.]|[Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy

1995-09-01T23:59:59.000Z

17

Two-dimensional electron gas in AlGaN/GaN heterostructures  

Science Conference Proceedings (OSTI)

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. {copyright} {ital 1997 American Vacuum Society.}

Li, J.Z.; Lin, J.Y.; Jiang, H.X. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Khan, M.A.; Chen, Q. [APA Optics, Inc., Blaine, Minnesota 55449 (United States)] [APA Optics, Inc., Blaine, Minnesota 55449 (United States)

1997-07-01T23:59:59.000Z

18

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures  

E-Print Network (OSTI)

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures, U.S.A. ABSTRACT Characterization of operational AlGaInN heterostructure light emitting diodes (LEDs the device lifetime in a non-destructive mode. INTRODUCTION Group ­ III nitride light emitting diodes (LEDs

Wetzel, Christian M.

19

Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

( gate=nickel)/(barrier=GaN/Al (y) Ga (1?y) N)/(buffer=GaN)/(substrate=SiC ) polarizationinduced high electron mobility transistors (PI-HEMTs) show promise for ultrahigh power microwave amplification. The polarization fields in these Ga-face

Lester F. Eastman

1999-01-01T23:59:59.000Z

20

AlP/GaP distributed Bragg reflectors  

SciTech Connect

Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

2013-07-15T23:59:59.000Z

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE  

SciTech Connect

An AlGaAs/GaAs resonant tunneling diode (RTD) with submicron size was fabricated on {l_brace}111{r_brace} oblique facets of GaAs with selective MBE. The method is based on the fact that a certain facet structure is formed on a patterned substrate in selective MBE because the growth rate depends strongly on the facet structure. The fabrication of a double-barrier structure was attempted on a {l_brace}111{r_brace}B facet. The current-voltage characteristics of the sample showed negative differential resistance at 77K demonstrating that we have achieved an RTD on a submicron facet.

Nishiwaki, T.; Yamaguchi, M.; Sawaki, N. [Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464-8603 (Japan)

2007-04-10T23:59:59.000Z

22

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

We have investigated the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors using atomic force microscopy and scanning electron microscopy after removing the gate metallization by ...

Makaram, Prashanth

23

Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment  

E-Print Network (OSTI)

Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate ...

Palacios, Tomas

24

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

Chung, Jinwook W. (Jinwook Will)

2008-01-01T23:59:59.000Z

25

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED  

Science Conference Proceedings (OSTI)

We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm{sup 2}V{sup -1}s{sup -1} at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affect the low temperature electron mobility in AlGaN/GaN heterostructures. Growth at the transition towards Ga droplet formation produced the best results. A quantitative analysis of the magnetoresistance confirmes scattering at dislocations as the dominant scattering process at low temperature.

Broxtermann, D.; Sivis, M.; Malindretos, J.; Rizzi, A. [IV. physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

2012-03-15T23:59:59.000Z

26

Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor  

SciTech Connect

A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ~10 were obtained at 300 degree C.

Abernathy, C.R.; Baca, A.G.; Cao, X.A.; Cho, H.; Dang, G.T.; Donovan, S.M.; Han, J.; Jung, K.B.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Wilson, R.G.; Zhang, A.P.; Zhang, L

1999-03-16T23:59:59.000Z

27

AlGaAs diode pumped tunable chromium lasers  

DOE Patents (OSTI)

An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF.sub.6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF.sub.6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.

Krupke, William F. (Pleasanton, CA); Payne, Stephen A. (Castro Valley, CA)

1992-01-01T23:59:59.000Z

28

Evaluation of defects and degradation in GaAs-GaAlAs wafers using transmission cathodoluminescence  

Science Conference Proceedings (OSTI)

A large number of GaAs substrates GaAlAs double-heterostructure (DH) wafers, and high-radiance GaAlAs DH light-emitting diodes (LEDS) were evaluated using transmission cathodoluminescence (TCL). We show that only epitaxial wafers with a high defect density as revealed by TCL readily develop dark line defects (DLDs) with current injection, optical excitation, or electron beam excitation. Furthermore, in agreement with the previous work, the electron-beam-induced DLDs originate at dislocations and their growth requires minority-carrier injection. Based on these results, it is inferred that TCL can serve as a nondestructive screening technique for the selection of materials that produces a high yield of reliable LEDs.

Chin, A.K.; Keramidas, V.G.; Johnston, W.D. Jr.; Mahajan, S.; Roccasecca, D.D.

1980-02-01T23:59:59.000Z

29

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures  

Science Conference Proceedings (OSTI)

Double pulse doped ({delta}-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm{sup 2}/(V s) at sheet electron densities of 3.00 x 10{sup 12} and 3.36 x 10{sup 12} cm{sup -2}, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A. [Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)

2010-07-15T23:59:59.000Z

30

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network (OSTI)

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP, or (Al,Ga)As, which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically hole-mediated ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Mn-doped Ga(As,P) is also favorable, as compared to (Al,Ga)As, with respect to the formation of carrier and moment compensating interstitial Mn impurities. In (Ga,Mn) (As,P) we find a marked decrease of the partial concentration of these detrimental impurities with increasing P content.

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

31

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. (Research Triangle Inst., Research Triangle Park, NC (United States))

1993-01-01T23:59:59.000Z

32

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

33

Fine structure of AlN/AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering  

SciTech Connect

We report the detailed structure analysis of our AlN/AlGaN superlattice (SL) grown by pulsed atomic-layer epitaxy (PALE) for dislocation filtering. Due to the nature of PALE, the AlGaN well material itself in the SL was found to be composed actually of an Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N short-period superlattice (SPSL), with the periodicity of 15.5 A ({approx_equal}6 monolayer), determined consistently from high-resolution x-ray diffraction and high-resolution transmission electron microscopy measurements. The SPSL nature of the AlGaN layers is believed to benefit from the AlN/AlGaN SL's coherent growth, which is important in exerting compressive strain for the thick upper n-AlGaN film, which serves to eliminate cracks. Direct evidence is presented which indicates that this SL can dramatically reduce the screw-type threading dislocation density.

Sun, W.H.; Zhang, J.P.; Yang, J.W.; Maruska, H.P.; Khan, M. Asif; Liu, R.; Ponce, F.A. [Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208 (United States); Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287 (United States)

2005-11-21T23:59:59.000Z

34

M4, Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers  

Science Conference Proceedings (OSTI)

On-axis reciprocal space mapping of the graded AlGaN showed tilt at each interface associated ..... New Concepts and Materials for Solar Power Conversion

35

Structure and Composition Peculiarities of GaN/AlN Multiple ...  

Science Conference Proceedings (OSTI)

Thickness of AlN and GaN layers in MQWs (multiple quantum wells) were ... InAs Quantum Dots by Ballistic Electron Emission Microscopy and Spectroscopy.

36

Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN  

DOE Green Energy (OSTI)

Etch rates up to 7,000 {angstrom}/min. for GaN are obtained in Cl{sub 2}/H{sub 2}/Ar or BCl{sub 3}/Ar ECR discharges at 1--3mTorr and moderate dc biases. Typical rates with HI/H{sub 2} are about a factor of three lower under the same conditions, while CH{sub 4}/H{sub 2} produces maximum rates of only {approximately}2,000 {angstrom}/min. The role of additives such as SF{sub 6}, N{sub 2}, H{sub 2} or Ar to the basic chlorine, bromine, iodine or methane-hydrogen plasma chemistries are discussed. Their effect can be either chemical (in forming volatile products with N) or physical (in breaking bonds or enhancing desorption of the etch products). The nitrides differ from conventional III-V`s in that bond-breaking to allow formation of the etch products is a critical factor. Threshold ion energies for the onset of etching of GaN, InGaN and InAlN are {ge} 75 eV.

Pearton, S.J.; Vartuli, C.B.; Lee, J.W.; Donovan, S.M.; MacKenzie, J.D.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States); Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); McLane, G.F. [Army Research Lab., Fort Monmouth, NJ (United States); Ren, F. [AT and T Bell Labs., Murray Hill, NJ (United States)

1996-04-01T23:59:59.000Z

37

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics  

Science Conference Proceedings (OSTI)

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO"2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium lamp ... Keywords: GaN, HEMT, MQW, Photo-chemical vapor deposition, SiO 2

Kai-Hsuan Lee; Ping-Chuan Chang; Shoou-Jinn Chang

2013-04-01T23:59:59.000Z

38

Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT  

Science Conference Proceedings (OSTI)

A new AlGaN/GaN-based high electron mobility transistor (HEMT) is proposed and its micro-wave characteristics are discussed by introducing a nanoscale AlN or InN layer to study the potential improvement in their high frequency performance. The 2DEG transport mechanism including various sub-band calculations for both (Al,In) N-based HEMTs are also discussed in the paper. Apart from direct current characteristics of the proposed HEMT, various microwave parameters such as transconductance, unit current gain (h{sub 21} = 1) cut-off frequency (f{sub t}), high power-gain frequency (f{sub max}). Masons available/stable gain and masons unilateral gain are also discussed for both devices to understand its suitable deployment in microwave frequency range.

Lenka, T. R., E-mail: trlenka@gmail.com; Panda, A. K., E-mail: akpanda62@hotmail.com [National Institute of Science and Technology (India)

2011-09-15T23:59:59.000Z

39

GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP  

Science Conference Proceedings (OSTI)

We report on the epitaxial growth of an AlSb/InAs heterostructure on a (001) GaP substrate. We investigate the conditions for the most efficient relaxation of GaSb islands on GaP. In particular, we show that the GaP surface treatment and the growth temperature are crucial for the formation of a two-dimensional periodic array of 90 deg. misfit dislocations at the episubstrate interface. With this relaxation process, an AlSb/InAs heterostructure exhibiting a room temperature mobility of 25 500 cm{sup 2} V{sup -1} s{sup -1} on GaP is demonstrated. This result paves the way to the integration of Sb-based devices on Si substrates through the use of GaP/Si templates.

El Kazzi, S.; Desplanque, L.; Coinon, C.; Wallart, X. [Institut d'Electronique, de Microelectronique, et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d'Ascq Cedex (France); Wang, Y.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Marechal Juin, 14050 Caen Cedex (France)

2010-11-08T23:59:59.000Z

40

CC2, Two-Dimensional Electron Gas in In X Al 1-X N/Aln/GaN ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates  

E-Print Network (OSTI)

5221, 34095 Montpellier, France E-mail: pmc53@cam.ac.uk Received October 12, 2012; accepted November 22, 2012; published online May 20, 2013 This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various...

Corfdir, Pierre; Dussaigne, Amlie; Teisseyre, Henryk; Suski, Tadeusz; Grzegory, Izabella; Lefebvre, Pierre; Giraud, Etienne; Shahmohammadi, Mehran; Phillips, Richard; Ganire, Jean-Daniel; Grandjean, Nicolas; Deveaud, Benot

42

K7, Self-Assembled GaN/AlN Nanowire Superlattices on Si toward ...  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

43

Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells  

Science Conference Proceedings (OSTI)

Exciton photoluminescence spectra, photoluminescence excitation spectra, and magnetophotoluminescence spectra of single (GaAs/AlGaAs/ZnMnSe) and double (GaAs/AlGaAs/ZnSe/ZnCdMnSe) heterovalent quantum wells formed by molecular beam epitaxy are studied. It is shown that the exciton absorption spectrum of such quantum wells mainly reproduces the resonant exciton spectrum expected for usual quantum wells with similar parameters, while the radiative exciton recombination have substantial distinctions, in particular the additional localization mechanism determined by defects generated by heterovalent interface exists. The nature of these localization centers is not currently clarified; their presence leads to broadening of photoluminescence lines and to an increase in the Stokes shift between the peaks of luminescence and absorption, as well as determining the variation in the magnetic g factor of bound exciton complexes.

Toropov, A. A., E-mail: toropov@beam.ioffe.ru; Kaibyshev, V. Kh.; Terent'ev, Ya. V.; Ivanov, S. V.; Kop'ev, P. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2011-02-15T23:59:59.000Z

44

SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors  

Science Conference Proceedings (OSTI)

Hydrothermally grown SnO2 was integrated with AlGaN/GaN high electron mobility transistor (HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO2 was improved after annealing at 400 C. The grain growth kinetics of the SnO2 nanomaterials, together with the O2 gas sensing properties and sensing mechanism of the SnO2 gated HEMT sensors were investigated. Detection of 1% oxygen in nitrogen at 100 C was possible. A low operation temperature and low power consumption oxygen sensor can be achieved by combining the SnO2 films with the AlGaN/GaN HEMT structure

Hung, S.T. [Feng Chia University, Taichung, Taiwan; Chung, Chi-Jung [Feng Chia University, Taichung, Taiwan; Chen, Chin Ching [University of Florida, Gainesville; Lo, C. F. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

45

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE  

NLE Websites -- All DOE Office Websites (Extended Search)

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE Identification of the Parasitic Chemical Reactions during AlGaN OMVPE by J. R. Creighton, M. E. Coltrin, and W. G. Breiland Motivation-GaN and AlGaN alloys are ex- tremely important materials with widespread applications for optoelectronics (e.g. solid state lighting) and high power electronics. Or- ganometallic vapor phase epitaxy (OMVPE) is the primary deposition methodology, but it suf- fers from several growth chemistry anomalies. Growth rate and alloy composition are often a sensitive function of temperature and other reac- tor variables. These factors make the AlGaN OMVPE process difficult to control and in- crease the cost of the material. Conventional wisdom has been that the non-ideal OMVPE behavior is due to parasitic "pre-reactions" be-

46

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network (OSTI)

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

47

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN  

Science Conference Proceedings (OSTI)

We investigate, via time-resolved photoluminescence, the temperature-dependence of charge carrier recombination mechanisms in nonpolar (Al,Ga)N/GaN single quantum wells (QWs) grown via molecular beam epitaxy on the a-facet of bulk GaN crystals. We study the influence of both QW width and barrier Al content on the dynamics of excitons in the 10-320 K range. We first show that the effective lifetime of QW excitons {tau} increases with temperature, which is evidence that nonradiative mechanisms do not play any significant role in the low-temperature range. The temperature range for increasing {tau} depends on the QW width and Al content in the (Al,Ga)N barriers. For higher temperatures, we observe a reduction in the QW emission lifetime combined with an increase in the decay time for excitons in the barriers, until both exciton populations get fully thermalized. Based on analysis of the ratio between barrier and QW emission intensities, we demonstrate that the main mechanism limiting the radiative efficiency in our set of samples is related to nonradiative recombination in the (Al,Ga)N barriers of charge carriers that have been thermally emitted from the QWs.

Corfdir, P.; Dussaigne, A.; Giraud, E.; Ganiere, J.-D.; Grandjean, N.; Deveaud-Pledran, B. [Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Teisseyre, H. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Suski, T.; Grzegory, I. [Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Lefebvre, P. [Laboratoire Charles Coulomb - UMR5221 - CNRS - Universite Montpellier 2, 34095 Montpellier (France)

2012-02-01T23:59:59.000Z

48

Strain relaxation in GaN/Al{sub x}Ga{sub 1-x}N superlattices grown by plasma-assisted molecular-beam epitaxy  

SciTech Connect

We have investigated the misfit relaxation process in GaN/Al{sub x}Ga{sub 1-x}N (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 10{sup 8} cm{sup -2} to 2 x 10{sup 9} cm{sup -2}. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 10{sup 10} cm{sup -2}. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

Kotsar, Y.; Bellet-Amalric, E.; Das, A.; Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 Rue des Martyrs, 38054 Grenoble cedex 9 (France); Doisneau, B. [SIMaP, Grenoble INP, Domaine Universitaire, BP 75, 38402 Saint Martin d'Heres (France); Sarigiannidou, E. [LMGP, Grenoble INP, 3 Parvis Louis Neel, BP 257, 38016 Grenoble cedex 1 (France)

2011-08-01T23:59:59.000Z

49

Mexico FL GA SC AL MS LA TX AR TN TN  

NLE Websites -- All DOE Office Websites (Extended Search)

2005 Hurricanes on the Natural Gas Industry in the Gulf of Mexico Region Mexico FL GA SC AL MS LA TX AR TN TN Katrina - Cumulative wind > 39 mph Katrina - Cumulative wind > 73 mph...

50

AlGaAsSb buffer/barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability  

Science Conference Proceedings (OSTI)

Keywords: AlGaAsSb, Hall elements, InAs, Sb, buffer/barriers, deep quantum well, field effect transistors, reliability

S. Miya; S. Muramatsu; N. Kuze; K. Nagase; T. Iwabuchi; A. Ichii; M. Ozaki; I. Shibasaki

1996-03-01T23:59:59.000Z

51

L1, Formation of Structural Defects in AlGaN/GaN High Electron ...  

Science Conference Proceedings (OSTI)

Transmission electron microscope (TEM) cross sectional image has shown that electrical degradation is closely related to structural damage in the GaN cap and ...

52

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network (OSTI)

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

53

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

0.00-1.99 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1996 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1996 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: In 1996, consumption of natural gas for agricultural use

54

High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers  

Science Conference Proceedings (OSTI)

We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm{sup 2}/V s. The 2DEG density was tunable at 0.4-3.7x10{sup 13}/cm{sup 2} by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2010-11-29T23:59:59.000Z

55

Metalorganic Vapor-Phase Epitaxial Growth and Characterization of Quaternary AlGaInN  

SciTech Connect

In this letter we report the growth (by MOVPE) and characterization of quaternary AlGaInN. A combination of PL, high-resolution XRD, and RBS characterizations enables us to explore and delineate the contours of equil-emission energy and lattice parameters as functions of the quaternary compositions. The observation of room temperature PL emission as short as 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GdnN MQW heterostructures have also been grown; both x-ray diffraction and PL measurement suggest the possibility of incorporating this quaternary into optoelectronic devices.

BANAS, MICHAEL ANTHONY; CRAWFORD, MARY H.; FIGIEL, JEFFREY J.; HAN, JUNG; LEE, STEPHEN R.; MYERS JR., SAMUEL M.; PETERSON, GARY D.

1999-09-27T23:59:59.000Z

56

Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices  

Science Conference Proceedings (OSTI)

Reverse-bias stress testing has been applied to a large set of more than 50 AlGaN/GaN high electron mobility transistors, which were fabricated using the same process but with different values of the AlN mole fraction and the AlGaN barrier-layer thickness, as well as different substrates (SiC and sapphire). Two sets of devices having different defect types and densities, related to the different growth conditions and the choice of nucleation layer, were also compared. When subjected to gate drain (or gate-to-drain and source short-circuited) reverse-bias testing, all devices presented the same time-dependent failure mode, consisting of a significant increase in the gate leakage current. This failure mechanism occurred abruptly during step-stress experiments when a certain negative gate voltage, or critical voltage, was exceeded or, during constant voltage tests, at a certain time, defined as time to breakdown. Electroluminescence (EL) microscopy was systematically used to identify localized damaged areas that induced an increase of gate reverse current. This current increase was correlated with the increase of EL intensity, and significant EL emission during tests occurred only when the critical voltage was exceeded. Focused-ion-beam milling produced cross-sectional samples suitable for electron microscopy observation at the sites of failure points previously identified by EL microscopy. In highdefectivity devices, V-defects were identified that were associated with initially high gate leakage current and corresponding to EL spots already present in untreated devices. Conversely, identification of defects induced by reverse-bias testing proved to be extremely difficult, and only nanometer-size cracks or defect chains, extending vertically from the gate edges through the AlGaN/GaN heterojunction, were found. No signs of metal/semiconductor interdiffusion or extended defective areas were visible.

Cullen, David A [ORNL; Smith, David J [Arizona State University; Passaseo, Adriana [Consiglio Nazionale delle Ricerche; Tasco, Vittorianna [Consiglio Nazionale delle Ricerche; Stocco, Antonio [Universita di Padova; Meneghini, Matteo [Universita di Padova; Meneghesso, Gaudenzio [Universita di Padova; Zanoni, Enrico [Universita di Padova

2013-01-01T23:59:59.000Z

57

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

Fainman, "Influence of chlorine on etched sidewalls inFainman, Influence of chlorine on etched sidewalls inthe RIBE of GaAs with chlorine (Cl 2 ), ion beam sputtering

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

58

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

59

Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer  

Science Conference Proceedings (OSTI)

We investigate the strain properties of GaN films grown by plasma-assisted molecular beam epitaxy on Si(110) substrates. It is found that the strain of the GaN film can be converted from a tensile to a compressive state simply by inserting a thin AlN/GaN superlattice structure (SLs) within the GaN film. The GaN layers seperated by the SLs can have different strain states, which indicates that the SLs plays a key role in the strain modulation during the growth and the cooling down processes. Using this simple technique, we grow a crack-free GaN film exceeding 2-{mu}m-thick. The realization of the compressively strained GaN film makes it possible to grow thick GaN films without crack generation on Si substrates for optic and electronic device applications.

Shen, X. Q.; Takahashi, T.; Kawashima, H.; Ide, T.; Shimizu, M. [Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568 (Japan)

2012-07-16T23:59:59.000Z

60

Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures  

Science Conference Proceedings (OSTI)

An increase in the electron mobility and drift velocity in high electric fields in quantum wells of selectively doped InAlAs/InGaAs/InAsAs heterostructures is obtained experimentally via controlling the composition of semiconductors forming the interface. The electron mobility at the interface in the In{sub 0.8}Ga{sub 0.2}As/In{sub 0.7}Al{sub 0.3}As metamorphic structure with a high molar fraction of In (0.7-0.8) is as high as 12.3 Multiplication-Sign 10{sup 3} cm{sup 2} V{sup -1} s{sup -1} at room temperature. An increase in the electron mobility by a factor of 1.1-1.4 is attained upon the introduction of thin (1-3 nm) InAs layers into a quantum well of selectively doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures. A maximal drift velocity attains 2.5 Multiplication-Sign 10{sup 7} cm/s in electric fields of 2-5 kV/cm. The threshold field F{sub th} for the intervalley {Gamma}-L electron transfer (the Gunn effect) in the InGaAs quantum well is higher than in the bulk material by a factor of 2.5-3. The effect of two- to threefold decrease in the threshold field F{sub th} in the InGaAs quantum well is established upon increasing the molar fraction of In in the InAlAs barrier, as well as upon the introduction of thin InAs inserts into the InGaAs quantum well.

Vasil'evskii, I. S., E-mail: pozela@pfi.lt; Galiev, G. B.; Klimov, E. A. [MEPHI National Nuclear Research University (Russian Federation); Pozela, K.; Pozela, J.; Juciene, V.; Suziedelis, A.; Zurauskiene, N.; Kersulis, S.; Stankevic, V. [Center for Physical Sciences and Technology, Semiconductor Physics Institute (Lithuania)

2011-09-15T23:59:59.000Z

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Optical stability of shape-engineered InAs/InAlGaAs quantum dots  

SciTech Connect

The optical properties of shape-engineered InAs/InAlGaAs quantum dots (SEQDs) were investigated by temperature-dependent and excitation-power-dependent photoluminescence (PL) spectroscopy and compared with those of the conventionally grown InAs QDs (CQDs). The emission wavelength of the InAs/InAlGaAs SEQDs at 240 K was redshifted by 18 nm from that at 15 K, which was relatively smaller than that of the InAs CQDs (97 nm). The PL yield at 240 K was reduced to 1/86 and 1/65 of that measured at 15 K for the InAs CQDs and the InAs/InAlGaAs SEQDs, respectively. The emission wavelength for the InAs CQDs was blueshifted by 76 nm with increasing excitation power from 0.56 to 188 mW, compared to only by 7 nm for the InAs/InAlGaAs SEQDs. These results indicated that the InAs/InAlGaAs SEQDs were optically more stable than the InAs CQDs mainly due to the enhancement of the carrier confinement in the vertical direction and the improvement in the size uniformity.

Yang, Youngsin; Jo, Byounggu; Kim, Jaesu; Lee, Cheul-Ro; Kim, Jin Soo [Division of Advanced Materials Engineering, Research Center of Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju, Chonbuk 561-756 (Korea, Republic of); Oh, Dae Kon [Electronics and Telecommunication Research Institute (ETRI), Daejeon 305-350 (Korea, Republic of); Kim, Jong Su [Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Leem, Jae-Young [School of Nano Engineering, Inje University, Gimhae 621-749 (Korea, Republic of)

2009-03-01T23:59:59.000Z

62

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. [Research Triangle Inst., Research Triangle Park, NC (United States)

1993-01-01T23:59:59.000Z

63

Al composition dependence of breakdown voltage in Al{sub x}Ga{sub 1-x}N Schottky rectifiers  

SciTech Connect

Planar geometry, lateral Schottky rectifiers were fabricated on high resistivity Al{sub x}Ga{sub 1-x}N (x=0-0.25) epitaxial layers grown on sapphire substrates. The reverse breakdown voltages of unpassivated devices increased with Al composition, varying from 2.3 kV for GaN to 4.3 kV for Al{sub 0.25}Ga{sub 0.75}N. The reverse current-voltage (I-V) characteristics showed classical Shockley-Read-Hall recombination as the dominant mechanism, with I{proportional_to}V{sup 0.5}. The reverse current density in all diodes was in the range 5-10x10{sup -6} A cm{sup -2} at 2 kV. The use of p{sup +} guard rings was effective in preventing premature edge breakdown and with optimum ring width increased V{sub B} from 2.3 to 3.1 kV in GaN diodes. (c) 2000 American Institute of Physics.

Zhang, A. P. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Dang, G. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Ren, F. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Han, J. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Polyakov, A. Y. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Smirnov, N. B. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Govorkov, A. V. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Redwing, J. M. [Epitronics, Phoenix, Arizona 85027 (United States)] [Epitronics, Phoenix, Arizona 85027 (United States); Cao, X. A. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Pearton, S. J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2000-03-27T23:59:59.000Z

64

Optical modulation at around 1550 nm in a InGaAlAs optical waveguide containing a InGaAs/AlAs resonant tunnelling diode  

E-Print Network (OSTI)

We report electro-absorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrier resonant tunneling diode (DB-RTD). The RTD peak-to-valley transition increases the electric field across the waveguide, which shifts the core material absorption band-edge to longer wavelengths via the Franz-Keldysh effect, thus changing the light-guiding characteristics of the waveguide. Low-frequency characterisation of a device shows modulation up to 28 dB at 1565 nm. When dc biased close to the negative differential conductance (NDC) region, the RTD optical waveguide behaves as an electro-absorption modulator integrated with a wide bandwidth electrical amplifier, offering a potential advantage over conventional pn modulators.

Figueiredo, J M L; Stanley, C R; Ironside, C N; McMeekin, S G; Leite, A M P

1999-01-01T23:59:59.000Z

65

THz laser based on quasi-periodic AlGaAs superlattices  

SciTech Connect

The use of quasi-periodic AlGaAs superlattices as an active element of a quantum cascade laser of terahertz range is proposed and theoretically investigated. A multi-colour emission, having from three to six peaks of optical gain, is found in Fibonacci, Thue-Morse, and figurate superlattices in electric fields of intensity F = 11 - 13 kV cm{sup -1} in the frequency range f = 2 - 4 THz. The peaks depend linearly on the electric field, retain the height of 20 cm{sup -1}, and strongly depend on the thickness of the AlGaAs-layers. (lasers)

Malyshev, K V [N.E. Bauman Moscow State Technical University, Moscow (Russian Federation)

2013-06-30T23:59:59.000Z

66

Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation dose on dc characteristics and the reliability of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 109 to 2 1014 cm-2. For the dc characteristics, there was only minimal degradation of saturation drain current (IDSS), transconductance (gm), electron mobility and sheet carrier concentration at doses below 2 1013 cm-2, while the reduction of these parameters were 15%, 9%, 41% and 16.6%, respectively, at a dose of 2 1014 cm-2. At this same dose condition, increases of 37% in drain breakdown voltage (VBR) and of 45% in critical voltage (Vcri) were observed. The improvement of device reliability was attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose.

Liu, L. [University of Florida, Gainesville; Cuervo, C.V. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

67

Harmonic Responses in 2DEG AlGaAs/GaAs HEMT Devices Due to Plasma Wave Interaction  

Science Conference Proceedings (OSTI)

Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, omega{sub p}, lie in the terahertz range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short-channel High-Electron-Mobility Transistor (HEMT) and the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results.

Hashim, A. M.; Alias, Q. I. [Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Kasai, S.; Hasegawa, H. [Research Center for Integrated Quantum Electronics, Hokkaido University North 12 West 8, Sapporo 060-8628 (Japan)

2010-03-11T23:59:59.000Z

68

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas  

SciTech Connect

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2 Multiplication-Sign 10{sup 11} cm{sup -2}) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).

Mak, W. Y.; Sfigakis, F.; Beere, H. E.; Farrer, I.; Griffiths, J. P.; Jones, G. A. C.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom)] [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom); Das Gupta, K. [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom) [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom); Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India); Klochan, O.; Hamilton, A. R. [School of Physics, University of New South Wales, Sydney (Australia)] [School of Physics, University of New South Wales, Sydney (Australia)

2013-03-11T23:59:59.000Z

69

Temperature dependence and current transport mechanisms in Al{sub x}Ga{sub 1-x}N Schottky rectifiers  

SciTech Connect

GaN and Al{sub 0.25}Ga{sub 0.75}N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage V{sub B} (3.1 kV for GaN; 4.3 kV for AlGaN) displayed a negative temperature coefficient of -6.0{+-}0.4 V K{sup -1} for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100 A cm-2 was {approx}5 V for GaN and {approx}7.5 V for AlGaN. The on-state resistances, R{sub ON}, were 50 m{omega} cm2 for GaN and 75 m{omega} cm2 for AlGaN, producing figures-of-merit (V{sub RB}){sup 2}/R{sub ON} of 192 and 246 MW cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias. (c) 2000 American Institute of Physics.

Zhang, A. P. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Dang, G. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Ren, F. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Han, J. [Sandia National Laboratories, Albuquerque, New Mexico 87195 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87195 (United States); Polyakov, A. Y. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Smirnov, N. B. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Govorkov, A. V. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Redwing, J. M. [Epitronics, Phoenix, Arizona 85027 (United States)] [Epitronics, Phoenix, Arizona 85027 (United States); Cho, H. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Pearton, S. J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2000-06-19T23:59:59.000Z

70

Two-color picosecond experiments on anti-Stokes photoluminescence in GaAs/AlGaAs asymmetric double quantum wells  

E-Print Network (OSTI)

quantum wells S. C. Hohng and D. S. Kima) Department of Physics and Condensed Matter Research Institute in GaAs/AlGaAs asymmetric double quantum wells. Direct evidence for forbidden absorption is shown heterojunctions and asymmetric double quan- tum wells was found and its origin is still being hotly de- bated

Hohng, Sung Chul

71

Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy  

Science Conference Proceedings (OSTI)

Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A. [RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074 Aachen (Germany); Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich (Germany); Hollaender, B. [Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich (Germany); Forschungszentrum Juelich GmbH, PGI9-IT, 52425 Juelich (Germany); Heuken, M. [RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074 Aachen (Germany); AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany)

2012-11-01T23:59:59.000Z

72

Method of extracting thermally stable optical signals from a GaAlAs LED source  

SciTech Connect

A self-compensating scheme is described that eliminates the need for temperature control devices employed in many LED-based optical test and measurement instruments to ensure optical signal stability. Thermal behavior of GaAlAs LED sources is exploited to provide an optical wavelength band signal with 0.1%/C power level stability.

Murtaza, G.; Senior, J.M. [Manchester Metropolitan Univ. (United Kingdom). Faculty of Science and Engineering

1995-05-01T23:59:59.000Z

73

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors  

SciTech Connect

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-03-10T23:59:59.000Z

74

L7, Reduced Self-Heating in AlGaN/GaN HEMTs Using ...  

Science Conference Proceedings (OSTI)

Conference Tools for 2010 Electronic Materials Conference ... Electr. Dev., vol. 48, no. 3, pp. 465, 2001. [2] H. I. Fujishiro et al., Phys. Stat. Sol. (c) 2, no.

75

Pulsed atomic layer epitaxy of quaternary AlInGaN layers  

Science Conference Proceedings (OSTI)

In this letter, we report on a material deposition scheme for quaternary Al{sub x}In{sub y}Ga{sub 1-x--y}N layers using a pulsed atomic layer epitaxy (PALE) technique. The PALE approach allows accurate control of the quaternary layer composition and thickness by simply changing the number of aluminum, indium, and gallium pulses in a unit cell and the number of unit cell repeats. Using PALE, AlInGaN layers with Al mole fractions in excess of 40% and strong room-temperature photoluminescence peaks at 280 nm can easily be grown even at temperatures lower than 800{sup o}C. {copyright} 2001 American Institute of Physics.

Zhang, J.; Kuokstis, E.; Fareed, Q.; Wang, H.; Yang, J.; Simin, G.; Asif Khan, M.; Gaska, R.; Shur, M.

2001-08-13T23:59:59.000Z

76

Electron and hole gas in modulation-doped GaAs/Al{sub 1-x}Ga{sub x}As radial heterojunctions  

Science Conference Proceedings (OSTI)

We perform self-consistent Schroedinger-Poisson calculations with exchange and correlation corrections to determine the electron and hole gas in a radial heterojunction formed in a GaAs/AlGaAs core-multi-shell nanowire, which is either n- or p-doped. We show that the electron and hole gases can be tuned to different localizations and symmetries inside the core as a function of the doping density/gate potential. Contrary to planar heterojunctions, conduction electrons do not form a uniform 2D electron gas (2DEG) localized at the GaAs/AlGaAs interface, but rather show a transition between an isotropic, cylindrical distribution deep in the GaAs core (low doping) and a set of six tunnel-coupled quasi-1D channels at the edges of the interface (high doping). Holes, on the other hand, are much more localized at the GaAs/AlGaAs interface. At low doping, they present an additional localization pattern with six separated 2DEGs strips. The field generated by a back-gate may easily deform the electron or hole gas, breaking the sixfold symmetry. Single 2DEGs at one interface or multiple quasi-1D channels are shown to form as a function of voltage intensity, polarity, and carrier type.

Bertoni, Andrea; Royo, Miquel; Mahawish, Farah; Goldoni, Guido [CNR-NANO S3, Istituto Nanoscienze, Via Campi 213/a, 41125 Modena (Italy); Department of Physics, University of Modena and Reggio Emilia and CNR-NANO S3, Istituto Nanoscienze, Via Campi 213/a, 41125 Modena (Italy)

2011-11-15T23:59:59.000Z

77

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] Passivation  

E-Print Network (OSTI)

We studied submicrometer (L[subscript G] = 0.15-0.25 ¿m) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al[subscript 2]O[subscript 3] passivation. The combination of ...

Guo, Shiping

78

Mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers  

SciTech Connect

We report on the demonstration of mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers operating at 10 {mu}m. The laser structures are grown on n-InAs (100) substrate by solid-source molecular-beam epitaxy. An InAs/AlGaSb chirped superlattice structure providing a large oscillator strength and fast carrier depopulation is employed as the active part. The observed minimum threshold current density at 80 K is 0.7 kA/cm{sup 2}, and the maximum operation temperature in pulse mode is 270 K. The waveguide loss of an InAs plasmon waveguide is estimated, and the factors that determine the operation temperature are discussed.

Ohtani, K.; Fujita, K.; Ohno, H. [Laboratory for Nanoelectronics and Semiconductor Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai (Japan)

2005-11-21T23:59:59.000Z

79

Power Conversion Efficiency of AlGaAs/GaAs Schottky Diode for Low-Power On-Chip Rectenna Device Application  

Science Conference Proceedings (OSTI)

A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height from theoretical value are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are well rectified by the fabricated Schottky diodes and stable DC output voltage is obtained. Power conversion efficiency up to 50% is obtained at 1 GHz with series connection between diode and load. The fabricated the n-AlGaAs/GaAs Schottky diode provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai (Malaysia); Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 Skudai Johor Malaysia (Malaysia); Osman, Mohd Nizam [Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya (Malaysia)

2011-05-25T23:59:59.000Z

80

Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices  

Science Conference Proceedings (OSTI)

A set of AlGaN/GaN high electron mobility transistor devices has been investigated using step-stress testing, and representative samples of undegraded, source-side-degraded, and drain-side-degraded devices were examined using electron microscopy and microanalysis. An unstressed reference sample was also examined. All tested devices and their corresponding transmission electron microscopy samples originated from the same wafer and thus received nominally identical processing. Step-stressing was performed on each device and the corresponding current voltage characteristics were generated. Degradation in electrical performance, specifically greatly increased gate leakage current, was shown to be correlated with the presence of crystal defects near the gate edges. However, the drain-side-degraded device showed a surface pit on the source side, and another region of the same device showed no evidence of damage. Moreover, significant metal diffusion into the barrier layer from the gate contacts was also observed, as well as thin amorphous oxide layers below the gate metal contacts, even in the unstressed sample. Overall, these observations emphasize that gate-edge defects provide only a partial explanation for device failure.

Johnson, Michael [Arizona State University; Cullen, David A [ORNL; Liu, Lu [University of Florida; Kang, Tsung Sheng [University of Florida, Gainesville; Ren, F. [University of Florida; Chang, C. Y. [University of Florida; Pearton, S. J. [University of Florida; Jang, Soohwan [University of Florida, Gainesville; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Smith, David J [Arizona State University

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
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81

Final report on LDRD project : outstanding challenges for AlGaInN MOCVD.  

Science Conference Proceedings (OSTI)

The AlGaInN material system is used for virtually all advanced solid state lighting and short wavelength optoelectronic devices. Although metal-organic chemical vapor deposition (MOCVD) has proven to be the workhorse deposition technique, several outstanding scientific and technical challenges remain, which hinder progress and keep RD&A costs high. The three most significant MOCVD challenges are: (1) Accurate temperature measurement; (2) Reliable and reproducible p-doping (Mg); and (3) Low dislocation density GaN material. To address challenge (1) we designed and tested (on reactor mockup) a multiwafer, dual wavelength, emissivity-correcting pyrometer (ECP) for AlGaInN MOCVD. This system simultaneously measures the reflectance (at 405 and 550 nm) and emissivity-corrected temperature for each individual wafer, with the platen signal entirely rejected. To address challenge (2) we measured the MgCp{sub 2} + NH{sub 3} adduct condensation phase diagram from 65-115 C, at typical MOCVD concentrations. Results indicate that it requires temperatures of 80-100 C in order to prevent MgCp{sub 2} + NH{sub 3} adduct condensation. Modification and testing of our research reactor will not be complete until FY2005. A new commercial Veeco reactor was installed in early FY2004, and after qualification growth experiments were conducted to improve the GaN quality using a delayed recovery technique, which addresses challenge (3). Using a delayed recovery technique, the dislocation densities determined from x-ray diffraction were reduced from 2 x 10{sup 9} cm{sup -2} to 4 x 10{sup 8} cm{sup -2}. We have also developed a model to simulate reflectance waveforms for GaN growth on sapphire.

Mitchell, Christine Charlotte; Follstaedt, David Martin; Russell, Michael J.; Cross, Karen Charlene; Wang, George T.; Creighton, James Randall; Allerman, Andrew Alan; Koleske, Daniel David; Lee, Stephen Roger; Coltrin, Michael Elliott

2005-03-01T23:59:59.000Z

82

Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films  

DOE Patents (OSTI)

A denticulated Group III nitride structure that is useful for growing Al.sub.xGa.sub.1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.

Allerman, Andrew A.; Crawford, Mary H.; Lee, Stephen R.

2013-01-08T23:59:59.000Z

83

Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots  

Science Conference Proceedings (OSTI)

We report on the structural and optical properties of AlGaN/AlN quantum dot (QD) superlattices synthesized by plasma-assisted molecular-beam epitaxy. Modifying the composition and geometry of the QDs, the peak emission wavelength can be shifted from 320 nm to 235 nm while keeping the internal quantum efficiency larger than 30%. The efficient carrier confinement is confirmed by the stability of the photoluminescence (PL) intensity and decay time, from low temperature up to 100 K. Above this threshold, the PL intensity decreases and the radiative lifetime increases due to carrier thermalization. We also identified the intraband electronic transition between the ground level of the conduction band and the first excited state confined along the growth axis (s-p{sub z}).

Himwas, C.; Songmuang, R.; Le Si Dang [CEA-CNRS Group 'Nanophysique et Semiconducteurs,' Institut Neel-CNRS, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France); Bleuse, J.; Monroy, E. [CEA-CNRS Group 'Nanophysique et Semiconducteurs,' INAC-SP2M, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Rapenne, L.; Sarigiannidou, E. [INP-Grenoble/Minatec, 3 parvis Louis Neel BP257, 38016 Grenoble (France)

2012-12-10T23:59:59.000Z

84

Time-resolved resonance and linewidth of an ultrafast switched GaAs/AlAs microcavity  

E-Print Network (OSTI)

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change in width leads to a change in reflectivity modulation depth. The model predicts an optimal cavity Q for any...

Harding, Philip J; Hartsuiker, Alex; Nowicki-Bringuier, Yoanna-Reine; Gerard, Jean-Michel; Vos, Willem L

2009-01-01T23:59:59.000Z

85

Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics  

Science Conference Proceedings (OSTI)

Al"2O"3, HfO"2, and composite HfO"2/Al"2O"3 films were deposited on n-type GaN using atomic layer deposition (ALD). The interfacial layer of GaON and HfON was observed between HfO"2 and GaN, whereas the absence of an interfacial layer at Al"2O"3/GaN ... Keywords: Al2O3, Atomic-layer-deposition (ALD), GaN, HfO2, High k dielectric, MOS

Y. C. Chang; M. L. Huang; Y. H. Chang; Y. J. Lee; H. C. Chiu; J. Kwo; M. Hong

2011-07-01T23:59:59.000Z

86

Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density  

Science Conference Proceedings (OSTI)

Molecular-beam epitaxy is used for growing structures differing in doping technique and doping level and having a high two-dimensional-electron concentration n{sub s} in the quantum well. The effect of doping combining uniform and {delta} doping on the electron-transport properties of heterostructures is investigated. A new type of structure with a two-sided silicon {delta} doping of GaAs transition layers located on the quantum-well boundaries is proposed. The largest value of electron mobility {mu}{sub H} = 1520 cm{sup 2}/(V s) is obtained simultaneously with a high electron density n{sub s} = 1.37 Multiplication-Sign 10{sup 13} cm{sup -2} at 300 K with such a doping. It is associated with decreasing electron scattering by an ionized impurity, which is confirmed by the carried out calculations.

Khabibullin, R. A., E-mail: khabibullin_r@mail.ru; Vasil'evskii, I. S. [MEPHI National Research Nuclear University (Russian Federation); Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Ponomarev, D. S. [MEPHI National Research Nuclear University (Russian Federation); Lunin, R. A.; Kulbachinskii, V. A. [Moscow State University (Russian Federation)

2011-10-15T23:59:59.000Z

87

Polarization-balanced design of AlN/GaN heterostructures: Application to double-barrier structures  

E-Print Network (OSTI)

Inversion- and depletion- regions generally form at the interfaces between doped leads (cladding layers) and the active region in wurtzite c-plane AlN/GaN heterostructures. The band bending in the depletion region can seriously impede perpendicular electronic transport. To counter the formation of these regions, we consider polarization-balanced designs of AlN/GaN heterostructures based on matching the applied bias to the internal voltage drop arising from spontaneous and piezeolectric fields. To retain freedom of design we use alloyed Al$_{\\tilde{x}}$Ga$_{1-\\tilde{x}}$N leads. Use of pure GaN leads requires huge voltage drops which severely restricts design. The alloy concentration $\\tilde{x}$ tunes the internal voltage drop over the structure. For short active regions comprised of AlN and GaN layers, we derive a simple relation between the applied bias, average alloy composition of the active region, and the alloy concentration of the leads. We study polarization-balanced designs for AlN barriers structures...

Berland, Kristian; Hyldgaard, Per

2011-01-01T23:59:59.000Z

88

Theoretical And Experimental Studies Of The Effects Of Rapid Thermal Annealing In GaAs/AlGaAs Quantum Dots Grown By Droplet Epitaxy  

Science Conference Proceedings (OSTI)

We fabricated low-density GaAs/AlGaAs quantum dots for single photon source by droplet epitaxy. We investigated the emission energies of the dots and underlying superlattice by using photoluminescence and cathodoluminescence measurements. By forming a mesa etched structure, we distinguished the transitions from the superlattice and the dots. And we calculated the diffusion length in this system from the peak shift of the superlattice, and applied the diffusion to the dots to investigate the emission energy shift of the QDs.z

Moon, P. [Nano Convergence Devices Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa (Japan); Ha, S.-K.; Song, J. D.; Lim, J. Y.; Choi, W. J.; Han, I. K.; Lee, J. I. [Nano Convergence Devices Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Bounouar, S.; Donatini, F.; Dang, L. S.; Poizat, J. P. [CEA/CNRS/UJF team 'Nanophysics and semiconductors', Institute Neel/CNRS-UJF, Grenoble (France); Kim, J. S. [Department of Physics, Yeungnam University, Gyeonsan (Korea, Republic of)

2011-12-23T23:59:59.000Z

89

Category:Seattle, WA | Open Energy Information  

Open Energy Info (EERE)

Seattle, WA Seattle, WA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Seattle, WA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Seattle WA Puget Sound Energy Inc.png SVFullServiceRestauran... 60 KB SVHospital Seattle WA Puget Sound Energy Inc.png SVHospital Seattle WA ... 58 KB SVLargeHotel Seattle WA Puget Sound Energy Inc.png SVLargeHotel Seattle W... 57 KB SVLargeOffice Seattle WA Puget Sound Energy Inc.png SVLargeOffice Seattle ... 57 KB SVMediumOffice Seattle WA Puget Sound Energy Inc.png SVMediumOffice Seattle... 61 KB SVMidriseApartment Seattle WA Puget Sound Energy Inc.png SVMidriseApartment Sea... 58 KB SVOutPatient Seattle WA Puget Sound Energy Inc.png SVOutPatient Seattle W... 63 KB

90

Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates  

SciTech Connect

We show that the epitaxial growth of thin layers of AlGaAs on Ge and Si substrates allows to obtain single photon sources by exploiting the sparse and unintentional contamination with acceptors of the AlGaAs. Very bright and sharp single photoluminescence lines are observed in confocal microscopy. These lines behave very much as single excitons in quantum dots, but their implementation is by far much easier, since it does not require 3D nucleation. The photon antibunching is demonstrated by time resolved Hanbury Brown and Twiss measurements.

Minari, S.; Cavigli, L.; Sarti, F.; Abbarchi, M.; Accanto, N.; Munoz Matutano, G.; Vinattieri, A.; Gurioli, M. [Dipartimento di Fisica e Astronomia, LENS and CNISM, Universita di Firenze, Via Sansone 1, I-50019 Firenze (Italy); Bietti, S.; Sanguinetti, S. [Dipartimento di Scienza dei Materiali and L-NESS, Universita di Milano Bicocca, Via Cozzi 53, I-20125 Milano (Italy)

2012-10-22T23:59:59.000Z

91

II3, 2?m Thick Device Quality GaN on Si(111) Using AlGaN Graded ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

92

Effect of antimony nano-scale surface-structures on a GaSb/AlAsSb distributed Bragg reflector  

SciTech Connect

Effects of antimony crystallization on the surface of GaSb during low temperature molecular beam epitaxy growth are investigated. The geometry of these structures is studied via transmission electron and atomic force microscopies, which show the surface metal forms triangular-shaped, elongated nano-wires with a structured orientation composed entirely of crystalline antimony. By depositing antimony on a GaSb/AlAsSb distributed Bragg reflector, the field is localized within the antimony layer. Polarization dependent transmission measurements are carried out on these nano-structures deposited on a GaSb/AlAsSb distributed Bragg reflector. It is shown that the antimony-based structures at the surface favor transmission of light polarized perpendicular to the wires.

Husaini, S.; Shima, D.; Ahirwar, P.; Rotter, T. J.; Hains, C. P.; Dang, T.; Bedford, R. G.; Balakrishnan, G. [Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Dayton, OH 45433 (United States)] [Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Dayton, OH 45433 (United States)

2013-02-11T23:59:59.000Z

93

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY...

94

Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations  

Science Conference Proceedings (OSTI)

Deep-UV optical gain has been demonstrated in Al{sub 0.7}Ga{sub 0.3}N/AlN multiple quantum wells under femtosecond optical pumping. Samples were grown by molecular beam epitaxy under a growth mode that introduces band structure potential fluctuations and high-density nanocluster-like features within the AlGaN wells. A maximum net modal gain value of 118 {+-} 9 cm{sup -1} has been measured and the transparency threshold of 5 {+-} 1 {mu}J/cm{sup 2} was experimentally determined, corresponding to 1.4 x 10{sup 17} cm{sup -3} excited carriers. These findings pave the way for the demonstration of solid-state lasers with sub-250 nm emission at room temperature.

Francesco Pecora, Emanuele; Zhang Wei; Nikiforov, A.Yu.; Yin Jian; Paiella, Roberto; Dal Negro, Luca; Moustakas, T. D. [Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary's Street, Boston, Massachusetts 02215 (United States); Zhou Lin; Smith, David J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2012-02-06T23:59:59.000Z

95

Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy  

SciTech Connect

Low-temperature AlN buffer layers grown via plasma-assisted molecular beam epitaxy on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions, with their size, shape, and tilt determined by the AlN V/III flux ratio. GaN nanowires were frequently observed to adopt the structural characteristics of the underlying AlN columns, including the size and the degree of tilt. Piezoresponse force microscopy and polarity-sensitive etching indicate that the AlN films and the protruding columns have a mixed crystallographic polarity. Convergent beam electron diffraction indicates that GaN nanowires are Ga-polar, suggesting that Al-polar columns are nanowire nucleation sites for Ga-polar nanowires. GaN nanowires of low density could be grown on AlN buffers that were predominantly N-polar with isolated Al-polar columns, indicating a high growth rate for Ga-polar nanowires and suppressed growth of N-polar nanowires under typical growth conditions. AlN buffer layers grown under slightly N-rich conditions (V/III flux ratio = 1.0 to 1.3) were found to provide a favorable growth surface for low-density, coalescence-free nanowires.

Brubaker, Matt D. [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); DARPA Center for Integrated Micro/Nano-Electromechanical Transducers (iMINT), University of Colorado, Boulder, Colorado 80309 (United States); Levin, Igor; Davydov, Albert V. [Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Rourke, Devin M.; Sanford, Norman A.; Bertness, Kris A. [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Bright, Victor M. [Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); DARPA Center for Integrated Micro/Nano-Electromechanical Transducers (iMINT), University of Colorado, Boulder, Colorado 80309 (United States)

2011-09-01T23:59:59.000Z

96

WA_02_042_GENERAL_MOTORS_POWER_TRAIN_DIV_Waiver_of_Domestic_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA02042GENERALMOTORSPOWERTRAINDIVWaiverofDomestic.pdf WA02042GENERALMOTORSPOWERTRAINDIVWaiverofDomestic.pdf WA02042GENERALMOTORSPOWERTRAINDIVWaiverof...

97

WA_00_026_WASTE_MANAGEMENT_AND_PROC_INC_and_TEXACO_Waiver_of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA99018TEXACOENERGYSYSTEMSWaiverofDomesticandForei.pdf WA1993023TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome.pdf WA1994001TEXACOEXPLORATIONANDPRODUCTIO...

98

Activation energy of degradation in GaAlAs double heterostructure laser diodes  

SciTech Connect

Aging test of GaAlAs double heterostructure (DH) laser diodes is performed in the temperature range of 50--180 /sup 0/C. In samples for the aging test, AuSn-alloy bonding solder is used and the facet coating with Al/sub 2/O/sub 3/ film is performed. Samples are operated in the light emitting diode (LED) mode with the application of the constant current of 4 kA/cm/sup 2/ and 6 kA/cm/sup 2/ at temperatures above 80 /sup 0/C and in the automatic power control (APC) lasing mode with the constant optical power of 5 mW/facet at 50 and 70 /sup 0/C. The activation energy is 0.5 eV obtained from the results of the LED mode operation at 4 kA/cm/sup 2/. The parameter to evaluate the degradation is the current at which the optical power at 25 /sup 0/C is 5 mW/facet. This parameter includes the deterioration of the external differencial efficiency. It is shown that the increasing rates of this parameter are almost the same at the same temperature between the LED mode operation at 4 kA/cm/sup 2/ and 6 kA/cm/sup 2/. The increasing rate is almost the same when samples are operated in the APC lasing mode. Twenty-three samples operated at 70 /sup 0/C maintain the optical power of 5 mW/facet set initially over 5000 h. The averaged increasing rate of that parameter in these samples is 7.1 x 10/sup -6//h. The activation energy of 0.5 eV is almost the same as that of GaAlAs DH LED's which is 0.56 eV. It is presumed that point defects which disperse homogeneously cause the degradation of laser diodes and this degradation mode seemed to be the same as LED owing to the improvements against the facet degradation and the contact degradation.

Imai, H.; Hori, K.; Takusagawa, M.; Wakita, K.

1981-05-01T23:59:59.000Z

99

Category:Yakima, WA | Open Energy Information  

Open Energy Info (EERE)

Yakima, WA Yakima, WA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Yakima, WA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Yakima WA Puget Sound Energy Inc.png SVFullServiceRestauran... 61 KB SVHospital Yakima WA Puget Sound Energy Inc.png SVHospital Yakima WA P... 58 KB SVLargeHotel Yakima WA Puget Sound Energy Inc.png SVLargeHotel Yakima WA... 58 KB SVLargeOffice Yakima WA Puget Sound Energy Inc.png SVLargeOffice Yakima W... 58 KB SVMediumOffice Yakima WA Puget Sound Energy Inc.png SVMediumOffice Yakima ... 57 KB SVMidriseApartment Yakima WA Puget Sound Energy Inc.png SVMidriseApartment Yak... 59 KB SVOutPatient Yakima WA Puget Sound Energy Inc.png SVOutPatient Yakima WA... 63 KB SVPrimarySchool Yakima WA Puget Sound Energy Inc.png

100

SF{sub 6}/O{sub 2} plasma effects on silicon nitride passivation of AlGaN/GaN high electron mobility transistors  

SciTech Connect

The effects of various plasma and wet chemical surface pretreatments on the electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) passivated with plasma-deposited silicon nitride were investigated. The results of pulsed IV measurements show that samples exposed to various SF{sub 6}/O{sub 2} plasma treatments have markedly better rf dispersion characteristics compared to samples that were either untreated or treated in wet buffered oxide etch prior to encapsulation. The improvement in these characteristics correlates with the reduction of carbon on the semiconductor surface as measured with x-ray photoelectron spectroscopy. HEMT channel sheet resistance was also affected by varying silicon nitride deposition parameters.

Meyer, David J.; Flemish, Joseph R.; Redwing, Joan M. [Materials Science and Engineering Department, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2006-11-27T23:59:59.000Z

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location  

Science Conference Proceedings (OSTI)

We report a systematic study of the near-infrared intersubband absorption in AlGaN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without {delta}-doping. The transition energies are in agreement with theoretical calculations including many-body effects. A dramatic reduction of the intersubband absorption linewidth is observed when the {delta}-doping is placed at the end of the quantum well. This reduction is attributed to the improvement of interface roughness. The linewidth dependence on interface roughness is well reproduced by a model that considers the distribution of well widths measured with transmission electron microscopy.

Edmunds, C.; Cervantes, M.; Malis, O. [Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); Tang, L.; Shao, J.; Li, D. [Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, West Lafayette, Indiana 47907 (United States); Gardner, G. [Birck Nanotechnology Center, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, D. N. [Birck Nanotechnology Center, West Lafayette, Indiana 47907 (United States); Manfra, M. J. [Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2012-09-03T23:59:59.000Z

102

Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization  

Science Conference Proceedings (OSTI)

The critical voltage for degradation of AlGaN/GaN high electron mobility transistors (HEMTs) employed with the Pt/Ti/Au gate metallization instead of the commonly used Ni/Au was significantly increased during the off-state stress. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -60V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of around -60V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Kang, Tsung Sheng [University of Florida, Gainesville; Davies, Ryan [University of Florida; Gila, Brent P. [University of Florida, Gainesville; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Ren, F. [University of Florida

2011-01-01T23:59:59.000Z

103

Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices  

Science Conference Proceedings (OSTI)

We present the real-time x-ray irradiation response of charge and pH sensitive solution gate AlGaN/GaN high electron mobility transistors. The devices show stable and reproducible behavior under and following x-ray radiation, including a linear integrated response with dose into the muGy range. Titration measurements of devices in solution reveal that the linear pH response and sensitivity are not only retained under x-ray irradiation, but an irradiation response could also be measured. Since the devices are biocompatible, and can be simultaneously operated in aggressive fluids and under hard radiation, they are well-suited for both medical radiation dosimetry and biosensing applications.

Hofstetter, Markus; Funk, Maren; Paretzke, Herwig G.; Thalhammer, Stefan [Helmholtz Zentrum Muenchen, Ingolstaedter Landstrasse 1, 85764 Neuherberg (Germany); Howgate, John; Sharp, Ian D.; Stutzmann, Martin [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching (Germany)

2010-03-01T23:59:59.000Z

104

High photo-excited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode  

E-Print Network (OSTI)

We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77K. The detection structure is based on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QD-RTD). A photon rate of 115 photons per second had induced 10nA photocurrent in this structure, corresponding to the photo-excited carrier multiplication factor of 10^7. This high multiplication factor is achieved by the quantum dot induced memory effect and the resonant tunneling tuning effect of QD-RTD structure.

Wang, Wangping; Xiong, Dayuan; Li, Ning; Lu, Wei

2007-01-01T23:59:59.000Z

105

High photo-excited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode  

E-Print Network (OSTI)

We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77K. The detection structure is based on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QD-RTD). A photon rate of 115 photons per second had induced 10nA photocurrent in this structure, corresponding to the photo-excited carrier multiplication factor of 10^7. This high multiplication factor is achieved by the quantum dot induced memory effect and the resonant tunneling tuning effect of QD-RTD structure.

Wangping Wang; Ying Hou; Dayuan Xiong; Ning Li; Wei Lu

2007-10-15T23:59:59.000Z

106

Drift velocity of electrons in quantum wells of selectively doped In{sub 0.5}Ga{sub 0.5}As/Al{sub x}In{sub 1-x}As and In{sub 0.2}Ga{sub 0.8}As/Al{sub x}Ga{sub 1-x}As heterostructures in high electric fields  

Science Conference Proceedings (OSTI)

The field dependence of drift velocity of electrons in quantum wells of selectively doped In{sub 0.5}Ga{sub 0.5}As/Al{sub x}In{sub 1-x}As and In{sub 0.2}Ga{sub 0.8}As/Al{sub x}Ga{sub 1-x}As heterostructures is calculated by the Monte Carlo method. The influence of varying the molar fraction of Al in the composition of the Al{sub x}Ga{sub 1-x}As and Al{sub x}In{sub 1-x}As barriers of the quantum well on the mobility and drift velocity of electrons in high electric fields is studied. It is shown that the electron mobility rises as the fraction x of Al in the barrier composition is decreased. The maximum mobility in the In{sub 0.5}Ga{sub 0.5}As/In{sub 0.8}Al{sub 0.2}As quantum wells exceeds the mobility in a bulk material by a factor of 3. An increase in fraction x of Al in the barrier leads to an increase in the threshold field E{sub th} of intervalley transfer (the Gunn effect). The threshold field is E{sub th} = 16 kV/cm in the In{sub 0.5}Ga{sub 0.5}As/Al{sub 0.5}In{sub 0.5}As heterostructures and E{sub th} = 10 kV/cm in the In{sub 0.2}Ga{sub 0.8}As/Al{sub 0.3}Ga{sub 0.7}As heterostructures. In the heterostructures with the lowest electron mobility, E{sub th} = 2-3 kV/cm, which is lower than E{sub th} = 4 kV/cm in bulk InGaAs.

Pozela, J., E-mail: pozela@pfi.lt; Pozela, K.; Raguotis, R.; Juciene, V. [Center for Physical Sciences and Technology, Semiconductor Physics Institute (Lithuania)

2011-06-15T23:59:59.000Z

107

Cl{sub 2}-based dry etching of the AlGaInN system in inductively coupled plasmas  

DOE Green Energy (OSTI)

Cl{sub 2}-based Inductively Coupled Plasmas with low additional dc self- biases(-100V) produce convenient etch rates(500-1500 A /min) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas(Ar, N{sub 2}, H{sub 2}), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl{sub 2} in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Cho, Hyun; Vartuli, C.B.; Abernathy, C.R.; Donovan, S.M.; Pearton, S.J. [Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering; Shul, R.J.; Han, J. [Sandia National Labs., NM (United States)

1997-12-01T23:59:59.000Z

108

Strain control of AlGaN/GaN high electron mobility transistor structures on silicon (111) by plasma assisted molecular beam epitaxy  

Science Conference Proceedings (OSTI)

This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN-based high electron mobility transistor structures grown on 4 in. Si (111) substrates. In situ measurements of wafer curvature during growth proved to be a very powerful method to analyze the buffer layer's thickness dependent strain. The Ga/N ratio at the beginning of growth of the GaN buffer layer is the critical parameter to control the compressive strain of the entire grown structure. An engineered amount of compressive strain must be designed into the structure to perfectly compensate for the tensile strain caused by differences in the thermal expansion coefficient between the epi-layer and substrate during sample cool down from growth temperatures. A maximum film thickness of 4.2 {mu}m was achieved without the formation of any cracks and a negligible bow of the wafers below 10 {mu}m. Measurement of the as-grown wafers revealed depth profiles of the charge carrier concentration comparable to values achieved on SiC substrates and mobility values of the two dimensional electron gas in the range 1230 to 1350 cm{sup 2}/Vs at a charge carrier concentration of 6.5-7 10{sup 12}/cm{sup 2}. First results on processed wafers with 2 {mu}m thick buffer layer indicate very promising results with a resistance of the buffer, measured on 200 {mu}m long contacts with 15 {mu}m pitch, in the range of R > 10{sup 9}{Omega} at 100 V and breakdown voltages up to 550 V.

Aidam, Rolf; Diwo, Elke; Rollbuehler, Nicola; Kirste, Lutz; Benkhelifa, Fouad [Fraunhofer-Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany)

2012-06-01T23:59:59.000Z

109

Growth and properties of InGaAs/FeAl/InAlAs/InP heterostructures for buried reflector/interconnect applications in InGaAs thermophotovoltaic devices  

DOE Green Energy (OSTI)

Thermophotovoltaic cells consisting of InGaAs active layers are of extreme promise for high efficiency, low bandgap TPV conversion. In the monolithic interconnected module configuration, the presence of the InGaAs lateral conduction layer (LCL) necessary for the series connection between TPV cells results in undesirable free carrier absorption, causing a tradeoff between series resistance and optical absorption losses in the infrared. A potential alternative is to replace the LCL with an epitaxial metal layer that would provide a low-resistance interconnect while not suffering from free carrier absorption. The internal metal layer would also serve as an efficient, panchromatic back surface reflector, providing the additional advantage of increased effective optical thickness of the InGaAs cell. In this paper, the authors present the first results on the growth and development of buried epitaxial metal layers for TPV applications. High quality, single crystal, epitaxial Fe{sub x}Al{sub 1{minus}x} layers were grown on InAlAs/InP substrates, having compositions in the range x = 0.40--0.80. Epitaxial metal layers up to 1,000 {angstrom} in thickness were achieved, with excellent uniformity over large areas and atomically smooth surfaces. X-ray diffraction studies indicate that all FeAl layers are strained with respect to the substrate, for the entire composition range studied and for all thicknesses. The FeAl layers exhibit excellent resistance characteristics, with resistivities from 60 {micro}ohm-cm to 100 {micro}ohm-cm, indicating that interface scattering has a negligible effect on lateral conductivity. Reflectance measurements show that the FeAl thickness must be at least 1,000 {angstrom} to achieve > 90% reflection in the infrared.

Ringel, S.A.; Sacks, R.N.; Qin, L. [Ohio State Univ., Columbus, OH (United States). Dept. of Electrical Engineering; Clevenger, M.B.; Murray, C.S. [Bettis Atomic Power Lab., West Mifflin, PA (United States)

1998-11-01T23:59:59.000Z

110

Spin injection into semiconductors : the role of Fe/Al[sub x]Ga[sub 1-x]As interface  

SciTech Connect

The influence of the growth and post-growth annealing temperatures of Fe/Al{sub x}Ga{sub 1-x}As-based spin light-emitting diodes (LEDs) on the spin injection efficiency is discussed. The extent of interfacial reactions during molecular beam epitaxial growth of Fe on GaAs was determined from in-situ x-ray photoelectron spectroscopy studies. The Fe/GaAs interface results in {<=} 3 monolayers of reaction for Fe grown at -15 C. Intermediate growth temperatures (95 C) lead to {approx}5 monolayers of interfacial reactions, and high growth temperatures of 175 C lead to a {approx}9 monolayer thick reacted layer. Polarized neutron reflectivity was used to determine the interfacial magnetic properties of epitaxial Fe{sub 0.5}Co{sub 0.5}/GaAs heterostructures grown under identical conditions. No interfacial magnetic dead layer is detected at the interface for Fe{sub 0.5}Co{sub 0.5} films grown at -15 C, an {approx}6 {angstrom} thick nonmagnetic layer formed at the interface for 95 C growth and an {approx}5 {angstrom} thick magnetic interfacial reacted layer formed for growth at 175 C. Spin injection from Fe contacts into spin LEDs decreases sharply when reactions result in a nonmagnetic interfacial layer. Significant spin injection signals are obtained from Fe contacts grown between -5 C and 175 C, although the higher Fe growth temperatures resulted in a change in the sign of the spin polarization. Post-growth annealing of the spin LEDs is found to increase spin injection efficiency for low Fe growth temperatures and to a sign reversal of the spin polarization for high growth temperature (175 C). An effective Schottky barrier height increase indicates that post growth annealing modifies the Fe/Al{sub x}Ga{sub 1-x}As interface.

Fitzsimmons, M. R. (Michael R.); Park, S. (Sungkyun)

2004-01-01T23:59:59.000Z

111

WA_97_032_CHEMICAL_INDUSTRY_ENVIROMENTAL_TECHNOLOGY_PROJECTS...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Power Marketing Administration Other Agencies You are here Home WA97032CHEMICALINDUSTRYENVIROMENTALTECHNOLOGYPROJECTS.pdf WA97032CHEMICALINDUSTRYENVIROMENTALTECHNOL...

112

Evolution of AlN buffer layers on Silicon and the effect on the property of the expitaxial GaN film  

E-Print Network (OSTI)

The morphology evolution of high-temperature grown AlN nucleation layers on (111) silicon has been studied using atomic force microscopy (AFM). The structure and morphology of subsequently grown GaN film were characterized ...

Zang, Keyan

113

II2, GaN/AlN Heterostructures on Vertical {111} Fin Facets of Si (110)  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

114

Comparison of dc performance of Pt/Ti/Au- and Ni/Au-Gated AlGaN/GaN High Electron Mobility Transistors  

Science Conference Proceedings (OSTI)

We have demonstrated significant improvements of AlGaN/GaN High Electron Mobility Transistors (HEMTs) dc performance by employing Pt/Ti/Au instead of the conventional Ni/Au gate metallization. During off-state bias stressing, the typical critical voltage for HEMTs with Ni/Au gate metallization was ~ -45 to -65V. By sharp contrast, no critical voltage was observed for HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. After the off-state stressing, the drain current of Ni/Au gated-HEMTs decreased by~ 15%. For the Pt-gate HEMTs, no degradation of the drain current occurred and there were minimal changes in the Schottky gate characteristics for both forward and reverse bias conditions. The HEMTs with Pt/Ti/Au metallization showed an excellent drain on/off current ratio of 1.5 108. The on/off drain current ratio of Ni-gated HEMTs was dependent on the drain bias voltage and ranged from 1.2 107 at Vds=5V and 6 105

Liu, L. [University of Florida, Gainesville; Lo, C. F. [University of Florida; Kang, Tsung Sheng [University of Florida, Gainesville; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL; Laboutin, O. [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Ren, F. [University of Florida

2011-01-01T23:59:59.000Z

115

Investigation of mechanisms of multimode emission from double-heterostructure AlGaAs injection lasers with narrow stripe contacts  

SciTech Connect

An investigation was made of the spectral characteristics of planar stripe (contact width 6--8 ..mu..) lasers made of AlGaAs heterostructures. The steady-state emission spectrum could be of multimode type because of the high level of spontaneous emission in the lasing mode. The spectrum then became narrower on increase in the power and in the limit changed to the single-mode form. However, in the presence of self-modulation processes the multimode nature of the emission spectrum could be explained by a theory of transient effects and in this case the width of the spectrum increased on increase in the power.

Bessonov, Y.L.; Kurlenkov, S.S.; Morozov, V.N.; Sapozhnikov, S.M.; Thai, C.t.; Shidlovskii, V.R.

1985-02-01T23:59:59.000Z

116

C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric  

Science Conference Proceedings (OSTI)

Epitaxial germanium metal-oxide-semiconductor capacitors (MOSCAP) were fabricated on GaAs substrate using atomic layer deposited Al"2O"3 gate dielectric with surface treatments including pure HF and HF plus rapid thermal oxidation (RTO). The electrical ... Keywords: ALD Al2O3, CMOS integration, Ge MOSCAP, Ge epitaxial film, RTO

Shih Hsuan Tang; Chien I. Kuo; Hai Dang Trinh; Mantu Hudait; Edward Yi Chang; Ching Yi Hsu; Yung Hsuan Su; Guang-Li Luo; Hong Quan Nguyen

2012-09-01T23:59:59.000Z

117

WA_97_038_FORD_MOTOR_COMPANY_Waiver_of_Domestic_and_Foreign_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA97038FORDMOTORCOMPANYWaiverofDomesticandForeign.pdf WA97038FORDMOTORCOMPANYWaiverofDomesticandForeign.pdf WA97038FORDMOTORCOMPANYWaiverofDomestican...

118

WA_01_007_SOLAR_TURBINES_Waiver_of_Domestic_and_Foreign_pate...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA07012BOEINGCOMPANYWaiverofDomesticandForeignPate.pdf WA03001CHEVRONTEXACOWaiverofDomesticandForeignPate.pdf WA1993004SOLARTURBINEINCWaivero...

119

WA_99_018_TEXACO_ENERGY_SYSTEMS_Waiver_of_Domestic_and_Forei...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA03037MERIDIANAUTOSYSTEMSWaiverofDomesticandForei.pdf WA03001CHEVRONTEXACOWaiverofDomesticandForeignPate.pdf WA01019GENERALELECTRICCORPWaiver...

120

WA_1994_009_SAINT-BOBAIN-NORTON_INDUSTRIAL_CERAMICS_CORPORAT...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA1993022NORTONCOMPANYWaiverofDomesticandForeignRi.pdf WA97009DETROITDIESELCORPORATIONWaiverofDomesticand.pdf WA1994007KYOCERAINDUSTRIALCERAMIC...

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

WA_1995_025_AMOCO_PRODUCTION_COMPANY_Waiver_of_Domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA1995025AMOCOPRODUCTIONCOMPANYWaiverofDomesticand.pdf WA1995025AMOCOPRODUCTIONCOMPANYWaiverofDomesticand.pdf WA1995025AMOCOPRODUCTIONCOMPANYWaiverofDom...

122

WA_99_022_AIR_PRODUCTS_AND_CHEMICAL_Waiver_of_Domestic_and_F...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA99022AIRPRODUCTSANDCHEMICALWaiverofDomesticandF.pdf WA99022AIRPRODUCTSANDCHEMICALWaiverofDomesticandF.pdf WA99022AIRPRODUCTSANDCHEMICALWaiverofDome...

123

WA_04_054_ECR_INTERNATIONAL_Waiver_of_Patent_Rights_to_Inven...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA04039HONEYWELLINTERNATIONALWaiverofPatentRightsUn.pdf WA06016BPSOLARINTERNATIONALWaiverofPatentRightsUnd.pdf WA07040GRAFTECHINTERNATIONALLTDW...

124

WA_07_016_OSRAM_SYLVANIA_Waiver_of_Patent_Rights_Under_a_DOE...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA04016MACKTRUCKSWaiverofPatentRightsunderNRELSub.pdf WA06016BPSOLARINTERNATIONALWaiverofPatentRightsUnd.pdf WA05031OSRAMSYLVANIAPRODUCTSWaiv...

125

Lattice constant grading in the Al.sub.y Ga.sub.1-y As.sub.1-x Sb.sub.x alloy system  

DOE Patents (OSTI)

Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5 .mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photolvoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of growing layer.

Moon, Ronald L. (Palo Alto, CA)

1980-01-01T23:59:59.000Z

126

Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 21011 to 21015 cm2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 21015 cm2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 21011 to 21015 cm2 exhibited minimal degradation of the saturation drain current and extrinsic trans- conductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present. VC 2011 American Vacuum Society. [DOI: 10.1116/1.3644480

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Ren, F. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2011-01-01T23:59:59.000Z

127

Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source  

Science Conference Proceedings (OSTI)

InAlN lattice-matched to GaN was grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source. The alloy composition, growth conditions, and strain coherence of the InAlN were verified by high resolution x-ray diffraction {omega}-2{theta} scans and reciprocal space maps. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy of the InAlN revealed the absence of lateral composition modulation that was observed in the films grown by plasma-assisted MBE. InAlN/AlN/GaN high electron mobility transistors with smooth surfaces were fabricated with electron mobilities exceeding 1600 cm{sup 2}/Vs and sheet resistances below 244 {Omega}/sq.

Wong, Man Hoi; Wu Feng; Hurni, Christophe A.; Choi, Soojeong; Speck, James S.; Mishra, Umesh K. [Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106 (United States)

2012-02-13T23:59:59.000Z

128

SOLID SOLUTION EFFECTS ON THE THERMAL PROPERTIES IN THE MgAl2O4-MgGa2O4  

Science Conference Proceedings (OSTI)

Solid solution eects on thermal conductivity within the MgO-Al2O3-Ga2O3 system were studied. Samples with systematically varied additions of MgGa2O4 to MgAl2O4 were prepared and the laser ash technique was used to determine thermal diusivity at temperatures between 200C and 1300C. Heat capacity as a function of temperature from room temperature to 800C was also determined using dierential scanning calorimetry. Solid solution in the MgAl2O4-MgGa2O4 system decreases the thermal conductivity up to 1000C. At 200C thermal conductivity decreased 24% with a 5 mol% addition of MgGa2O4 to the system. At 1000C the thermal conductivity decreased 13% with a 5 mol% addition. Steady state calculations showed a 12.5% decrease in heat ux with 5 mol% MgGa2O4 considered across a 12 inch thickness.

O'Hara, Kelley [University of Missouri, Rolla; Smith, Jeffrey D [ORNL; Sander, Todd P. [Missouri University of Science and Technology; Hemrick, James Gordon [ORNL

2013-01-01T23:59:59.000Z

129

Radio-frequency measurements of UNiX compounds (X= Al, Ga, Ge) in high magnetic fields  

SciTech Connect

We performed radio-frequency (RF) skin-depth measurements of antiferromagnetic UNiX compounds (X=Al, Ga, Ge) in magnetic fields up to 60 T and at temperatures between 1.4 to {approx}60 K. Magnetic fields are applied along different crystallographic directions and RF penetration-depth was measured using a tunnel-diode oscillator (TDO) circuit. The sample is coupled to the inductive element of a TDO resonant tank circuit, and the shift in the resonant frequency {Delta}f of the circuit is measured. The UNiX compounds exhibit field-induced magnetic transitions at low temperatures, and those transitions are accompanied by a drastic change in {Delta}f. The results of our skin-depth measurements were compared with previously published B-T phase diagrams for these three compounds.

Mielke, Charles H [Los Alamos National Laboratory; Mcdonald, David R [Los Alamos National Laboratory; Zapf, Vivien [Los Alamos National Laboratory; Altarawneh, Moaz M [Los Alamos National Laboratory; Lacerda, Alex H [Los Alamos National Laboratory; Adak, Sourav [Los Alamos National Laboratory; Karunakar, Kothapalli [Los Alamos National Laboratory; Nakotte, Heinrich [Los Alamos National Laboratory; Chang, S [NIST; Alsmadi, A M [HASHEMITE UNIV; Alyones, S [HASHEMIT UNIV

2009-01-01T23:59:59.000Z

130

The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

We have investigated the effect of proton irradiation on reliability of InAlN/GaN high electron mobility transistors (HEMTs). Devices were subjected to 5-15 MeV proton irradiations with a fixed dose of 5 1015 cm-2, or to a different doses of 2 1011, 5 1013 or 2 1015 cm-2 of protons at a fixed energy of 5 MeV. During off-state electrical stressing, the typical critical voltage for un-irradiated devices was 45 to 55 V. By sharp contrast, no critical voltage was detected for proton irradiated HEMTs up to 100 V, which was instrument-limited. After electrical stressing, no degradation was observed for the drain or gate current-voltage characteristics of the proton-irradiated HEMTs. However, the drain current decreased ~12%, and the reverse bias gate leakage current increased more than two orders of magnitude for un-irradiated HEMTs as a result of electrical stressing.

Liu, L. [University of Florida, Gainesville; Lo, C. F. [University of Florida; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL; Ren, F. [University of Florida

2012-01-01T23:59:59.000Z

131

Atomic layer deposition of Al{sub 2}O{sub 3} on GaSb using in situ hydrogen plasma exposure  

SciTech Connect

In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al{sub 2}O{sub 3} interfaces. Prior to atomic layer deposition of an Al{sub 2}O{sub 3} dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical interfaces, as indicated by capacitance-voltage measurements, were obtained using higher plasma powers, longer exposure times, and increasing substrate temperatures up to 250 Degree-Sign C. X-ray photoelectron spectroscopy reveals that the most effective treatments result in decreased SbO{sub x}, decreased Sb, and increased GaO{sub x} content at the interface. This in situ hydrogen plasma surface preparation improves the semiconductor/insulator electrical interface without the use of wet chemical pretreatments and is a promising approach for enhancing the performance of Sb-based devices.

Ruppalt, Laura B.; Cleveland, Erin R.; Champlain, James G.; Prokes, Sharka M.; Brad Boos, J.; Park, Doewon; Bennett, Brian R. [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375 (United States)

2012-12-03T23:59:59.000Z

132

WA_05_006_ABENGOA_BIOENERGY_CORPORATION_Waiver_of_Domestic_a...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

06ABENGOABIOENERGYCORPORATIONWaiverofDomestica.pdf WA05006ABENGOABIOENERGYCORPORATIONWaiverofDomestica.pdf WA05006ABENGOABIOENERGYCORPORATIONWaiverofDomesti...

133

WA_97_009_DETROIT_DIESEL_CORPORATION_Waiver_of_Domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

09DETROITDIESELCORPORATIONWaiverofDomesticand.pdf WA97009DETROITDIESELCORPORATIONWaiverofDomesticand.pdf WA97009DETROITDIESELCORPORATIONWaiverofDomestica...

134

WA_97_010_DETROIT_DIESEL_CORPORATION_Waiver_of_Domestice_and...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0DETROITDIESELCORPORATIONWaiverofDomesticeand.pdf WA97010DETROITDIESELCORPORATIONWaiverofDomesticeand.pdf WA97010DETROITDIESELCORPORATIONWaiverofDomesticea...

135

WA_03_043_GENERAL_ELECTRIC_POWER_SYSTEMS_Waiver_of_Domestic_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3043GENERALELECTRICPOWERSYSTEMSWaiverofDomestic.pdf WA03043GENERALELECTRICPOWERSYSTEMSWaiverofDomestic.pdf WA03043GENERALELECTRICPOWERSYSTEMSWaiverofDom...

136

WA_03_050_GENERAL_ELECTRIC__POWER_SYSTEMS_Waiver_of_Domestic...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

50GENERALELECTRICPOWERSYSTEMSWaiverofDomestic.pdf WA03050GENERALELECTRICPOWERSYSTEMSWaiverofDomestic.pdf WA03050GENERALELECTRICPOWERSYSTEMSWaiverofDomes...

137

WA_03_016_GENE_ELEC_HYBRID_POWER_GENERATION_SYSTEMS_Waiver_o...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Marketing Administration Other Agencies You are here Home WA03016GENEELECHYBRIDPOWERGENERATIONSYSTEMSWaivero.pdf WA03016GENEELECHYBRIDPOWERGENERATIONSYSTEMS...

138

WA_00_007_COMBUSTION_ENGINEERING_INC_Waiver_of_Domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

07COMBUSTIONENGINEERINGINCWaiverofDomesticand.pdf WA00007COMBUSTIONENGINEERINGINCWaiverofDomesticand.pdf WA00007COMBUSTIONENGINEERINGINCWaiverofDomestica...

139

WA_1995_046_EASTMAN_CHEMICAL_COMPANY_Waiver_of_Domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

46EASTMANCHEMICALCOMPANYWaiverofDomesticand.pdf WA1995046EASTMANCHEMICALCOMPANYWaiverofDomesticand.pdf WA1995046EASTMANCHEMICALCOMPANYWaiverofDomesticand...

140

WA_1995_015_EASTMAN_CHEMICAL_COMPANY_Waiver_of_Domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

15EASTMANCHEMICALCOMPANYWaiverofDomesticand.pdf WA1995015EASTMANCHEMICALCOMPANYWaiverofDomesticand.pdf WA1995015EASTMANCHEMICALCOMPANYWaiverofDomesticand...

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

WA_05_022_DOW_CHEMICAL_COMPANY_Waiver_of_domestic_and_Foreig...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2DOWCHEMICALCOMPANYWaiverofdomesticandForeig.pdf WA05022DOWCHEMICALCOMPANYWaiverofdomesticandForeig.pdf WA05022DOWCHEMICALCOMPANYWaiverofdomesticandFore...

142

WA_04_057_CHEMICAL_RESEARCH_AND_LICENSING_CO_Waiver_of_Paten...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7CHEMICALRESEARCHANDLICENSINGCOWaiverofPaten.pdf WA04057CHEMICALRESEARCHANDLICENSINGCOWaiverofPaten.pdf WA04057CHEMICALRESEARCHANDLICENSINGCOWaiverofPat...

143

WA_02_042_GENERAL_MOTORS_POWER_TRAIN_DIV_Waiver_of_Domestic_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

42GENERALMOTORSPOWERTRAINDIVWaiverofDomestic.pdf WA02042GENERALMOTORSPOWERTRAINDIVWaiverofDomestic.pdf WA02042GENERALMOTORSPOWERTRAINDIVWaiverofDomest...

144

WA_06_034_ENERGY_CONVERSION_DEVICES_INC_Waiver_of_Domestic_a...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

06034ENERGYCONVERSIONDEVICESINCWaiverofDomestica.pdf WA06034ENERGYCONVERSIONDEVICESINCWaiverofDomestica.pdf WA06034ENERGYCONVERSIONDEVICESINCWaiverofDom...

145

WA_1993_028_ALLIANCE_ELECTRIC_COMPANY_Waiver_of_Domestic_and...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2MARTINMARIETTACORPORATIONKNOWASGENERALDYNA.pdf WA1994013GENERALELECTRICCOMPANYCORPORATERESEARCHAND.pdf WA1993023TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome...

146

WA_1995_026_CHEVRON_PRODUCTION_COMPNAY_Waiver_of_Domestic_an...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

UCTIONCOMPNAYWaiverofDomestican.pdf More Documents & Publications WA1993023TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome.pdf WA1993028ALLIANCEELECTRICCOMPANYWaiver...

147

WA_1994_012_MARTIN_MARIETTA_CORPORATION_KNOW_AS_GENERAL_DYNA...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3GENERALELECTRICCOMPANYCORPORATERESEARCHAND.pdf WA1993028ALLIANCEELECTRICCOMPANYWaiverofDomesticand.pdf WA1993023TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome...

148

WA_1994_001_TEXACO_EXPLORATION_AND_PRODUCTION_Waiver_of_Dome...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

01TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome.pdf WA1994001TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome.pdf WA1994001TEXACOEXPLORATIONANDPRODUCTIONWaiverofDom...

149

WA_1993_023_TEXACO_EXPLORATION_AND_PRODUCTION_Waiver_of_Dome...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

23TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome.pdf WA1993023TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome.pdf WA1993023TEXACOEXPLORATIONANDPRODUCTIONWaiverofDom...

150

WA_97_018_INTERNATIONAL_FUEL_CELLS_CORPS_Waiver_of_Domestic_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7018INTERNATIONALFUELCELLSCORPSWaiverofDomestic.pdf WA97018INTERNATIONALFUELCELLSCORPSWaiverofDomestic.pdf WA97018INTERNATIONALFUELCELLSCORPSWaiverofDom...

151

WA_02_050_SPECIALIZED_TECHNOLOGY_RESOURCES_Waiver_of_Patent_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

50SPECIALIZEDTECHNOLOGYRESOURCESWaiverofPatent.pdf WA02050SPECIALIZEDTECHNOLOGYRESOURCESWaiverofPatent.pdf WA02050SPECIALIZEDTECHNOLOGYRESOURCESWaiverofPate...

152

WA_04_076_CHEVRONTEXACO_TECHNOLOGY_VENTURES_Waiver_of_Patent...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6CHEVRONTEXACOTECHNOLOGYVENTURESWaiverofPatent.pdf WA04076CHEVRONTEXACOTECHNOLOGYVENTURESWaiverofPatent.pdf WA04076CHEVRONTEXACOTECHNOLOGYVENTURESWaiverofPate...

153

WA_04_028_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_patent_Rights...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4028AIRPRODUCTSANDCHEMICALSWaiverofpatentRights.pdf WA04028AIRPRODUCTSANDCHEMICALSWaiverofpatentRights.pdf WA04028AIRPRODUCTSANDCHEMICALSWaiverofpatent...

154

WA_1994_021_ATLANTA_GAS_LIGHT_AND_ABSORBENT_RESEARCH_Waiver_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4021ATLANTAGASLIGHTANDABSORBENTRESEARCHWaiver.pdf WA1994021ATLANTAGASLIGHTANDABSORBENTRESEARCHWaiver.pdf WA1994021ATLANTAGASLIGHTANDABSORBENTRESEARCHWai...

155

WA_05_060_SHELL_SOLAR_INDUSTRIES_Waiver_of_Domestic_and_fore...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

60SHELLSOLARINDUSTRIESWaiverofDomesticandfore.pdf WA05060SHELLSOLARINDUSTRIESWaiverofDomesticandfore.pdf WA05060SHELLSOLARINDUSTRIESWaiverofDomesticandf...

156

WA_1995_012_ENGELHARDT_INSTITUTE_OF_MOLECULAR_BIOLOGY_Waiver...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

12ENGELHARDTINSTITUTEOFMOLECULARBIOLOGYWaiver.pdf WA1995012ENGELHARDTINSTITUTEOFMOLECULARBIOLOGYWaiver.pdf WA1995012ENGELHARDTINSTITUTEOFMOLECULARBIOLOGYWaive...

157

Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications  

Science Conference Proceedings (OSTI)

We report on molecular beam epitaxial growth of AlInSb/GaInSb metamorphic high-electron-mobility-transistor structures for low power, high frequency applications on 4 in. GaAs substrates. The structures consist of a Ga{sub 0.4}In{sub 0.6}Sb channel embedded in Al{sub 0.4}In{sub 0.6}Sb barrier layers which are grown on top of an insulating metamorphic buffer, which is based on the linear exchange of Ga versus In and a subsequent exchange of As versus Sb. Precise control of group V fluxes and substrate temperature in the Al{sub 0.4}In{sub 0.6}As{sub 1-x}Sb{sub x} buffer is essential to achieve high quality device structures. Good morphological properties were achieved demonstrated by the appearance of crosshatching and root mean square roughness values of 2.0 nm. Buffer isolation is found to be >100 k{Omega}/{open_square} for optimized growth conditions. Hall measurements at room temperature reveal electron densities of 2.8x10{sup 12} cm{sup -2} in the channel at mobility values of 21.000 cm{sup 2}/V s for single-sided Te volume doping and 5.4x10{sup 12} cm{sup -2} and 17.000 cm{sup 2}/V s for double-sided Te {delta}-doping, respectively.

Loesch, R.; Aidam, R.; Kirste, L.; Leuther, A. [Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg (Germany)

2011-02-01T23:59:59.000Z

158

Capped ED-Mode AlN/GaN Inverters - Programmaster.org  

Science Conference Proceedings (OSTI)

The demonstrated inverter is operating at VDD = 5 V and consists of an enhancement- and depletion-mode HEMT with 1.5 nm thin subcritical AlN...

159

Many-body effects in wide parabolic AlGaAs quantum wells A. Tabata, M. R. Martins, and J. B. B. Oliveira  

E-Print Network (OSTI)

Many-body effects in wide parabolic AlGaAs quantum wells A. Tabata, M. R. Martins, and J. B. B gas in n-type wide parabolic quantum wells. A series of samples with different well widths at the Fermi level at low temperature only in the thinnest parabolic quantum wells. The suppression of the many

Gusev, Guennady

160

Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs  

Science Conference Proceedings (OSTI)

Interfacial chemical analyses and electrical characterization of in situ atomic layer deposited (ALD) Al"2O"3 on freshly molecular beam epitaxy (MBE) grown n- and p- GaAs (001) with a (4x6) surface reconstruction are performed. The capacitance-voltage ... Keywords: Atomic layer deposition, III-V compound semiconductor, Molecular beam epitaxy

Y. H. Chang; M. L. Huang; P. Chang; C. A. Lin; Y. J. Chu; B. R. Chen; C. L. Hsu; J. Kwo; T. W. Pi; M. Hong

2011-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics  

Science Conference Proceedings (OSTI)

This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

Sun, K. X.

2011-05-31T23:59:59.000Z

162

WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS Energy Efficiency and Conservation Block Grant Program Location: Tribe WA-TRIBE- STILLAGUAMISH TRIBE OF INDIANS WA American Recovery and Reinvestment Act: Proposed Action or Project Description The Stillaguamish Tribe proposes to expand its Stillaguamish Tribe Transit Services (STTS). For the past three years, the STTS has employed 14-passenger buses to transport clients to and from the tribal medical, dental, behavioral health and massage clinics. Often the demand-response requests that come to STTS are for one to three passengers at a time; therefore, funds are being requested to purchase a hybrid sedan to transport clients. Conditions: None Categorical Exclusion(s) Applied: A1, B1.32, B5.1 *-For the complete DOE National Environmental Policy Act regulations regarding categorical exclusions, see Subpart D of 10 CFR10 21

163

Correlation between Ga-O signature and midgap states at the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface  

SciTech Connect

Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As gate stacks were fabricated using different concentrations of NH{sub 4}OH as a pre-deposition treatment. Increased NH{sub 4}OH concentrations significantly reduced the C-V weak inversion hump and the measured near midgap interface states density (D{sub it}). X-ray photoelectron spectroscopy (XPS) studies revealed that these changes in the electrical properties were accompanied by a reduction in the amount of the Ga-O bonding while As-As dimers as well as other XPS detected InGaAs surface species did not correlate with the observed D{sub it} trend. Possible explanations for these findings are suggested.

Krylov, Igor [Russell Berrie Nanotechnology Institute, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Gavrilov, Arkady [Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Eizenberg, Moshe [Russell Berrie Nanotechnology Institute, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Ritter, Dan [Russell Berrie Nanotechnology Institute, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)

2012-08-06T23:59:59.000Z

164

Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE  

Science Conference Proceedings (OSTI)

GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia and Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia); Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia)

2012-06-29T23:59:59.000Z

165

Reduction in interface state density of Al{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation  

Science Conference Proceedings (OSTI)

We report the decrease in interface trap density (D{sub it}) in Al{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor (MOS) capacitors by using electron cyclotron resonance plasma nitridation of the InGaAs surfaces. The impact of the nitridation process on the MOS interface properties is quantitatively examined. The plasma nitridation process is observed to form a nitrided layer at the InGaAs surface. The nitridation using microwave power (P{sub microwave}) of 250 W and nitridation time (t{sub nitridation}) of 420 s can form Al{sub 2}O{sub 3}/InGaAs MOS interfaces with a minimum D{sub it} value of 2.0 Multiplication-Sign 10{sup 11} cm{sup -2} eV{sup -1}. On the other hand, the nitridation process parameters such as P{sub microwave} and t{sub nitridation} are found to strongly alter D{sub it} (both decrease and increase are observed) and capacitance equivalent thickness (CET). It is found that the nitridation with higher P{sub microwave} and shorter t{sub nitridation} can reduce D{sub it} with less CET increase. Also, it is observed that as t{sub nitridation} increases, D{sub it} decreases first and increases later. It is revealed from XPS analyses that minimum D{sub it} can be determined by the balance between the saturation of nitridation and the progress of oxidation. As a result, it is found that the superior MOS interface formed by the nitridation is attributable to the existence of oxide-less InGaN/InGaAs interfaces.

Hoshii, Takuya; Lee, Sunghoon; Suzuki, Rena; Taoka, Noriyuki; Yokoyama, Masafumi; Takenaka, Mitsuru; Takagi, Shinichi [Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Yamada, Hishashi; Hata, Masahiko [Sumitomo Chemical Co. Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294 (Japan); Yasuda, Tetsuji [National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

2012-10-01T23:59:59.000Z

166

Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction  

Science Conference Proceedings (OSTI)

Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 {+-} 0.1 eV and conduction band offset of 1.61 {+-} 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

Lee, Kai-Hsuan; Chen, Chia-Hao [Nano Science Group, National Synchrotron Radiation Research Center, Hsin-Ann Rd. 101, 30076 Hsinchu, Taiwan (China)] [Nano Science Group, National Synchrotron Radiation Research Center, Hsin-Ann Rd. 101, 30076 Hsinchu, Taiwan (China); Chang, Ping-Chuan [Department of Electro-Optical Engineering, Kun Shan University, Dawan Rd. 949, 71003 Tainan, Taiwan (China)] [Department of Electro-Optical Engineering, Kun Shan University, Dawan Rd. 949, 71003 Tainan, Taiwan (China); Chen, Tse-Pu; Chang, Sheng-Po; Chang, Shoou-Jinn [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, University Rd. 1, 70101 Tainan, Taiwan (China)] [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, University Rd. 1, 70101 Tainan, Taiwan (China); Shiu, Hung-Wei; Chang, Lo-Yueh [Nano Science Group, National Synchrotron Radiation Research Center, Hsin-Ann Rd. 101, 30076 Hsinchu, Taiwan (China) [Nano Science Group, National Synchrotron Radiation Research Center, Hsin-Ann Rd. 101, 30076 Hsinchu, Taiwan (China); Department of Physics, National Tsing Hua University, Kuang-Fu Rd. 101, 30013 Hsinchu, Taiwan (China)

2013-02-18T23:59:59.000Z

167

SiN{sub x}-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms  

Science Conference Proceedings (OSTI)

We analyze the composition profiles within intermixed and non-intermixed AlInGaAs-based multiple quantum wells structures by secondary ion mass spectrometry and observe that the band gap blue shift is mainly attributed to the interdiffusion of In and Ga atoms between the quantum wells and the barriers. Based on these results, several AlInGaAs-based single quantum well (SQW) structures with various compressive strain (CS) levels were grown and their photoluminescence spectra were investigated after the intermixing process involving the encapsulation of thin SiN{sub x} dielectric films on the surface followed by rapid thermal annealing. In addition to the annealing temperature, we report that the band gap shift can be also enhanced by increasing the CS level in the SQW. For instance, at an annealing temperature of 850 Degree-Sign C, the photoluminescence blue shift is found to reach more than 110 nm for the sample with 1.2%-CS SQW, but only 35 nm with 0.4%-CS SQW. We expect that this relatively larger atomic compositional gradient of In (and Ga) between the compressively strained quantum well and the barrier can facilitate the atomic interdiffusion and it thus leads to the larger band gap shift.

Lee, Ko-Hsin; Thomas, Kevin; Gocalinska, Agnieszka; Manganaro, Marina; Corbett, Brian [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland); Pelucchi, Emanuele; Peters, Frank H. [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland); Department of Physics, University College Cork, Cork (Ireland)

2012-11-01T23:59:59.000Z

168

Lateral Al{sub x}Ga{sub 1-x}N power rectifiers with 9.7 kV reverse breakdown voltage  

SciTech Connect

Al{sub x}Ga{sub 1-x}N (x=0--0.25) Schottky rectifiers were fabricated in a lateral geometry employing p{sup +}-implanted guard rings and rectifying contact overlap onto an SiO{sub 2} passivation layer. The reverse breakdown voltage (V{sub B}) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al{sub 0.25}Ga{sub 0.75}N and 6350 V for GaN, respectively, for 100 {mu}m gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of {<=}9.67x10{sup 5}Vcm{sup -1}, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (V{sub B}){sup 2}/R{sub ON}, where R{sub ON} is the on-state resistance, was in the range 94--268 MWcm-2 for all the devices.

Zhang, A. P.; Johnson, J. W.; Ren, F.; Han, J.; Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Redwing, J. M.; Lee, K. P.; Pearton, S. J.

2001-02-05T23:59:59.000Z

169

Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation energy on dc and rf characteristics of InAlN/GaN high electron mobility transistors (HEMTs) were investigated. A fixed proton dose of 51015 cm2 with 5, 10, and 15 MeV irradiation energies was used in this study. For the dc characteristics, degradation was observed for sheet resistance, transfer resistance, contact resistivity, saturation drain current, maximum transconductance, reverse-bias gate leakage current, and sub-threshold drain leakage current for all the irradiated HEMTs; however, the degree of the degradation was decreased as the irradiation energy increased. Similar trends were obtained for the rf performance of the devices, with 10% degradation of the unity gain cut-off frequency (fT) and maximum oscillation frequency ( fmax) for the HEMTs irradiated with 15 MeV protons but 30% for 5 MeV proton irradiation. The carrier removal rate was in the range 0.66 1.24 cm1 over the range of proton energies investigated

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Gila, Brent P. [University of Florida, Gainesville; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

170

Above room-temperature operation of InAs/AlGaSb superlattice quantum cascade lasers emitting at 12 {mu}m  

SciTech Connect

The authors report on above-room-temperature operation of InAs/AlGaSb quantum cascade lasers emitting at 12 {mu}m. The laser structures are grown on a n-InAs (100) substrate using solid-source molecular beam epitaxy. An InAs/AlGaSb superlattice is used as an active part and an InAs double plasmon waveguide is used for optical confinement. Results show that increased doping concentration in the injection part of the active region expands the current operation range of the devices, allowing laser operation at and above room temperature. The observed threshold current density is 4.0 kA/cm{sup 2} at 300 K; the maximum operation temperature is 340 K.

Ohtani, K.; Moriyasu, Y.; Ohnishi, H.; Ohno, H. [Laboratory for Nanoelectronics and Semiconductor Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)

2007-06-25T23:59:59.000Z

171

Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density  

SciTech Connect

The study is devoted to theoretical explanation of a decrease in the electroluminescence efficiency as the pump current increases, which is characteristic of light-emitting-diode (LED) heterostructures based on AlInGaN. Numerical simulation shows that the increase in the external quantum efficiency at low current densities J {approx} 1 A/cm{sup 2} is caused by the competition between radiative and nonradiative recombination. The decrease in the quantum efficiency at current densities J > 1 A/cm{sup 2} is caused by a decrease in the efficiency of hole injection into the active region. It is shown that the depth of the acceptor energy level in the AlGaN emitter, as well as low electron and hole mobilities in the p-type region, plays an important role in this effect. A modified LED heterostructure is suggested in which the efficiency decrease with the pump current should not occur.

Rozhansky, I. V., E-mail: igor@quantum.ioffe.ru; Zakheim, D. A. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

2006-07-15T23:59:59.000Z

172

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

173

WA_05_046_GENERAL_MOTORS_CORPORATION_Waiver_of_domestic_and_...  

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& Publications WA04070GENERALMOTORSCORPORATIONWaiverofDomesticand.pdf WA02042GENERALMOTORSPOWERTRAINDIVWaiverofDomestic.pdf Advance Patent Waiver W(A)2010-031...

174

WA_01_023_BP_NORTH_AMERICAN_Waiver_of_Domestic_and_Foreign_I...  

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More Documents & Publications Advance Patent Waiver W(A)2012-002 Advance Patent Waiver W(A)2012-016 WA1993023TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome...

175

WA_01_029_GENERAL_ELECTRIC_R_and_D_Waiver_of_Patent_Rights_under...  

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176

Accelerated Publication: Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric  

Science Conference Proceedings (OSTI)

Ga"2O"3(Gd"2O"3) [GGO] 3.5nm-thick, with an in situ Al"2O"3 cap 1.5nm thick, has been directly deposited on Ge substrate without employing interfacial passivation layers. The equivalent oxide thickness (EOT) of the gate stack is 1.38-nm. The metal-oxide-semiconductor ... Keywords: EOT, Germanium, High-? dielectric, MOS

L. K. Chu; T. H. Chiang; T. D. Lin; Y. J. Lee; R. L. Chu; J. Kwo; M. Hong

2012-03-01T23:59:59.000Z

177

Well-defined excited states of self-assembled InAs/InAlGaAs quantum dots on InP (001)  

SciTech Connect

Self-assembled InAs/InAlGaAs quantum dots (QDs) in an InAlGaAs matrix on InP (001) substrates were grown by the alternate growth method (AGQD), where an InAs layer with a thickness of 1 monolayer (ML) and an InAlGaAs layer with a thickness of 1 ML were alternately deposited. Cross-sectional transmission electron microscopy images indicated that the aspect ratio (height/width) for the AGQDs was {approx}0.25, which was higher than {approx}0.10 of conventionally grown InAs QDs. The photoluminescence (PL) peak position for the ground states of the AGQDs was 1.485 {mu}m with a linewidth broadening of 42 meV at room temperature, while the PL linewidth for the conventionally grown QDs was 85 meV. And the peaks for the excited-state transitions were also clearly observed from the excitation-power dependent PL. This is the first observation on the well-defined excited-state transitions from the InP-based InAs QDs, even though there were several reports on the features of the excited states.

Kim, Jin Soo; Lee, Jin Hong; Hong, Sung Ui; Kwack, Ho-Sang; Choi, Byung Seok; Oh, Dae Kon [Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon (Korea, Republic of)

2005-08-01T23:59:59.000Z

178

Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn{sub 1-x}Mg{sub x}O layers by molecular beam epitaxy  

Science Conference Proceedings (OSTI)

Nonpolar (1120) Al{sub 0.2}Ga{sub 0.8}N/GaN multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (1120) Zn{sub 0.74}Mg{sub 0.26}O templates on r-plane sapphire substrates. The quantum wells exhibit well-resolved photoluminescence peaks in the ultra-violet region, and no sign of quantum confined Stark effect is observed in the complete multiple quantum well series. The results agree well with flat band quantum well calculations. Furthermore, we show that the MQW structures are strongly polarized along the [0001] direction. The origin of the polarization is discussed in terms of the strain anisotropy dependence of the exciton optical oscillator strengths.

Xia, Y.; Vinter, B.; Chauveau, J.-M. [CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne (France); University of Nice Sophia-Antipolis, 06103 Nice (France); Brault, J.; Nemoz, M.; Teisseire, M.; Leroux, M. [CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne (France)

2011-12-26T23:59:59.000Z

179

Changes related to "Category:Seattle, WA" | Open Energy Information  

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page Share this page on Facebook icon Twitter icon Changes related to "Category:Seattle, WA" Category:Seattle, WA Jump to: navigation, search This is a list of changes...

180

W(A)94-022 STATEMENT OF CONSIDERATIONS  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4-022 4-022 STATEMENT OF CONSIDERATIONS Request by Cummins Power Generation, Inc., for an Advance Waiver of Domestic and Foreign Patent Rights to Inventions made under a contract entitled "Utility Scale Joint Venture Project," between Cummins Power Generation, Inc. and Sandia National Laboratories (Contract No. AB- 8717B) under Management and Operations Contract DE-AL04-84AL85000, DOE Docket No. W(A)94-022. The petitioner, Cummins Power Generation, Inc., (CPG) has requested a waiver of all domestic and foreign patent rights to inventions which it may conceive or first actually reduce to practice in the course of work under the Utility Scale Joint Venture Project between Petitioner and Sandia National Laboratories (Sandia) under contract No. AB- 8717B. Sandia is operated by Sandia Corporation for the U.S. Department of Energy (DOE).

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181

W(A)93-013 STATEMENT OF CONSIDERATIONS  

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13 13 STATEMENT OF CONSIDERATIONS Request by AlliedSignal, Inc. for Waiver of Domestic and Foreign Patent Rights to inventions that may arise under Contract No. DE-FC04-93AL94462 between the United States Department of Energy (DOE) and AlliedSignal, Inc. DOE Docket: W(A)93-013 The Petitioner, AlliedSignal, Inc. (AlliedSignal), has requested a waiver of all domestic and foreign patent rights to inventions which it may conceive or reduce to practice in the course of work under Contract No. DE-FC04-93AL94462, a Cooperative Agreement with DOE. The project period is May 14, 1993 through May 13, 1996. The Cooperative Agreement covers work in designing a biological/chemical production process for caprolactam using microbial bioprocesses that convert cyclohexane to

182

W(A)93-039 STATEMENT OF CONSIDERATIONS  

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39 39 STATEMENT OF CONSIDERATIONS Request by Air Products and Chemicals, Inc. for Waiver of Domestic and Foreign Patent Rights to inventions that may arise under Contract No. DE-FC04-93AL94461 between the United States Department of Energy (DOE) and Air Products and Chemicals, Inc. DOE Docket: W(A)93-039. The Petitioner, Air Products and Chemicals, Inc., (Air Products) has requested a waiver of all domestic and foreign patent rights to inventions which it may conceive or reduce to practice in the course of work under Contract No. DE-FC04-93AL94461 a Cooperative Agreement with DOE. The contract covers a four phase development program for a recently patented technology developed at Air Products entitled "Novel Selective Surface Flow (SSF T ) Membranes for the

183

RECIPIENT:WA Dept. of Commerce STATE: WA PROJECT SEP ARRA SIRTI -  

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WA Dept. of Commerce STATE: WA WA Dept. of Commerce STATE: WA PROJECT SEP ARRA SIRTI - Demand Energy - Energy Storage System Tied to Solar on Commercial Facility TITLE: Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number cm Number DE-FOA-0000052 DE-EEOOO0139 GFO-o000139-031 Based on my review ofthe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4S1.1A), I have made the following determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and demand studies), and dissemination (including, but not limited to, document mailings, publication, and distribution;

184

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185

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186

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187

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188

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190

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191

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198

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200

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WA_98_005_WESTINGHOUSE_POWER_GENERATION_A_FORMER_DIVISION_OF...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Power Marketing Administration Other Agencies You are here Home WA98005WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98005WESTINGHOUSEPOWERGENERATIONAFORMER...

202

WA_03_014_HYBRID_POWER_GENERATION_SYSTEMS_Waiver_of_Domestic...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Sites Power Marketing Administration Other Agencies You are here Home WA03014HYBRIDPOWERGENERATIONSYSTEMSWaiverofDomestic.pdf WA03014HYBRIDPOWERGENERATIONSYSTEMS...

203

WA_02_011_BP_AMOCO_CHEMICAL_CO_Waiver_of_Domestic_and_Foreig...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1BPAMOCOCHEMICALCOWaiverofDomesticandForeig.pdf WA02011BPAMOCOCHEMICALCOWaiverofDomesticandForeig.pdf WA02011BPAMOCOCHEMICALCOWaiverofDomesticandFore...

204

WA_1993_036_DOW_CHEMICAL_COMPANY_Waiver_of_Domestic_and_Fore...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

36DOWCHEMICALCOMPANYWaiverofDomesticandFore.pdf WA1993036DOWCHEMICALCOMPANYWaiverofDomesticandFore.pdf WA1993036DOWCHEMICALCOMPANYWaiverofDomesticandFor...

205

WA_01_032_DOW_CHEMICAL_Waiver_of_Domestic_and_foreign_Patent...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1032DOWCHEMICALWaiverofDomesticandforeignPatent.pdf WA01032DOWCHEMICALWaiverofDomesticandforeignPatent.pdf WA01032DOWCHEMICALWaiverofDomesticandforeign...

206

WA_06_019_NALCO_CHEMICAL_COMPANY_Waiver_of_Domestic_and_Fore...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

19NALCOCHEMICALCOMPANYWaiverofDomesticandFore.pdf WA06019NALCOCHEMICALCOMPANYWaiverofDomesticandFore.pdf WA06019NALCOCHEMICALCOMPANYWaiverofDomesticandF...

207

WA_03_033_GE_WIND_ENERGY_LLC_Waiver_of_Domestic_and_Foreign_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3GEWINDENERGYLLCWaiverofDomesticandForeign.pdf WA03033GEWINDENERGYLLCWaiverofDomesticandForeign.pdf WA03033GEWINDENERGYLLCWaiverofDomesticandForeig...

208

WA_03_013_ANADARKO_PETROLEUM_Waiver_of_Domestic_and_Foreign_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3013ANADARKOPETROLEUMWaiverofDomesticandForeign.pdf WA03013ANADARKOPETROLEUMWaiverofDomesticandForeign.pdf WA03013ANADARKOPETROLEUMWaiverofDomesticandFo...

209

WA_-01_001_PHILLIPS_PETROLEUM_Waiver_of_Domestic_and_Foreign...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

-01001PHILLIPSPETROLEUMWaiverofDomesticandForeign.pdf WA-01001PHILLIPSPETROLEUMWaiverofDomesticandForeign.pdf WA-01001PHILLIPSPETROLEUMWaiverofDomesticand...

210

WA_04_036_HRL_Laboratories_LLC_.Waiver_pof_dDomestic_fand_Fo...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9GENERALMOTORSCORPWaiverofDomesticandForeign.pdf WA02042GENERALMOTORSPOWERTRAINDIVWaiverofDomestic.pdf WA03044CATERPILLARINCWaiverofDomesticandForeignR...

211

WA_04_026_ENERGY_CONVERSION_DEVICES_Waiver_of_Domestic_and_F...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6ENERGYCONVERSIONDEVICESWaiverofDomesticandF.pdf WA04026ENERGYCONVERSIONDEVICESWaiverofDomesticandF.pdf WA04026ENERGYCONVERSIONDEVICESWaiverofDomesticand...

212

WA_1993_018_CONSOLIDATION_COAL_CO_Waiver_of_Domestic_and_For...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

18CONSOLIDATIONCOALCOWaiverofDomesticandFor.pdf WA1993018CONSOLIDATIONCOALCOWaiverofDomesticandFor.pdf WA1993018CONSOLIDATIONCOALCOWaiverofDomesticandFo...

213

WA_04_034_NUVERA_FUEL_CELLS_INC_Waiver_of_Domestic_and_Forei...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04034NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04034NUVERAFUELCELLSINCWaiverofDomesticandFor...

214

WA_04_041_NUVERA_FUEL_CELLS_INC_Waiver_of_Domestic_and_Forei...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

41NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04041NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04041NUVERAFUELCELLSINCWaiverofDomesticandFo...

215

WA_03_054_HEIL_TRAILER_INTERNATIONAL_Waiver_of_Domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

ADVANCEDTECHNLOGYMATERIALSWaiverofDomestican.pdf WA04054ECRINTERNATIONALWaiverofPatentRightstoInven.pdf WA02035BPSOLARINTERNATIONALWaiverofDomesticandFore...

216

WA_04_055_BALLARD_POWER_SYSTEMS_CORP_Waiver_of_Domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

More Documents & Publications WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA99014UNITEDSOLARSYSTEMSCORPWaiverofDomesticandF.pdf...

217

WA_04_083_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04083AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04083AIRPRODUCTSANDCHEMICALSWaiverofPatentRigh...

218

WA_00_027_HONEYWELL_POWER_SYSTEMS_Waiver_of_Patent_Rights.pdf...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7HONEYWELLPOWERSYSTEMSWaiverofPatentRights.pdf WA00027HONEYWELLPOWERSYSTEMSWaiverofPatentRights.pdf WA00027HONEYWELLPOWERSYSTEMSWaiverofPatentRights.pdf...

219

WA_05_062_UNITED_TECHNOLOGIES_CORPORATION_Waiver_of_Patent_R...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5062UNITEDTECHNOLOGIESCORPORATIONWaiverofPatentR.pdf WA05062UNITEDTECHNOLOGIESCORPORATIONWaiverofPatentR.pdf WA05062UNITEDTECHNOLOGIESCORPORATIONWaiverofPa...

220

WA_04_082_DELPHI_AUTOMOTIVE_SYSTEMS_Waiver_of_Patent_Rights_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4082DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA04082DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA04082DELPHIAUTOMOTIVESYSTEMSWaiverofPatentR...

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221

WA_02_015_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Patent_Ri...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5AIRPRODUCTSANDCHEMICALSINCWaiverofPatentRi.pdf WA02015AIRPRODUCTSANDCHEMICALSINCWaiverofPatentRi.pdf WA02015AIRPRODUCTSANDCHEMICALSINCWaiverofPatent...

222

WA_07_040_GRAFTECH_INTERNATIONAL_LTD_Waiver_of_Patent_Rights...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

40GRAFTECHINTERNATIONALLTDWaiverofPatentRights.pdf WA07040GRAFTECHINTERNATIONALLTDWaiverofPatentRights.pdf WA07040GRAFTECHINTERNATIONALLTDWaiverofPatentRig...

223

WA_06_032_HONEYWELL_TURBO_TECHNOLOGIES_Waiver_of_Patent_Righ...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2HONEYWELLTURBOTECHNOLOGIESWaiverofPatentRigh.pdf WA06032HONEYWELLTURBOTECHNOLOGIESWaiverofPatentRigh.pdf WA06032HONEYWELLTURBOTECHNOLOGIESWaiverofPatentRi...

224

WA_04_040_HONEYWELL_INTERNATIONAL_INC_Waiver_of_Patent_Right...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0HONEYWELLINTERNATIONALINCWaiverofPatentRight.pdf WA04040HONEYWELLINTERNATIONALINCWaiverofPatentRight.pdf WA04040HONEYWELLINTERNATIONALINCWaiverofPatentRig...

225

WA_06_005_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA06005AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA06005AIRPRODUCTSANDCHEMICALSWaiverofPatentRigh...

226

WA_04_012_MACK_TRUCK_INC_Waiver_of_patent_Rights_under_NREL_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2MACKTRUCKINCWaiverofpatentRightsunderNREL.pdf WA04012MACKTRUCKINCWaiverofpatentRightsunderNREL.pdf WA04012MACKTRUCKINCWaiverofpatentRightsunderNRE...

227

WA_04_025_AIR_LIQUIDE_AMERICA_Waiver_of_Patent_Rights_under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

25AIRLIQUIDEAMERICAWaiverofPatentRightsunder.pdf WA04025AIRLIQUIDEAMERICAWaiverofPatentRightsunder.pdf WA04025AIRLIQUIDEAMERICAWaiverofPatentRightsund...

228

WA_04_043_UNITED_TECHNOLOGIES_CORP_Waiver_of_Patent_Rights_t...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

43UNITEDTECHNOLOGIESCORPWaiverofPatentRightst.pdf WA04043UNITEDTECHNOLOGIESCORPWaiverofPatentRightst.pdf WA04043UNITEDTECHNOLOGIESCORPWaiverofPatentRight...

229

WA_05_037_UNITED_TECHNOLOGIES_CORP_Waiver_of_Patent_Rights_t...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7UNITEDTECHNOLOGIESCORPWaiverofPatentRightst.pdf WA05037UNITEDTECHNOLOGIESCORPWaiverofPatentRightst.pdf WA05037UNITEDTECHNOLOGIESCORPWaiverofPatentRights...

230

WA_05_033_EASTMAN_CHEMICAL_COMPANY_Waiver_of_Patent_Rights_t...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

33EASTMANCHEMICALCOMPANYWaiverofPatentRightst.pdf WA05033EASTMANCHEMICALCOMPANYWaiverofPatentRightst.pdf WA05033EASTMANCHEMICALCOMPANYWaiverofPatentRight...

231

WA_04_063_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRigh...

232

WA_01_005__PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_patent...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5PRAXAIRINCWaiverofDomesticandForeignpatent.pdf WA01005PRAXAIRINCWaiverofDomesticandForeignpatent.pdf WA01005PRAXAIRINCWaiverofDomesticandForeignpate...

233

WA_05_029_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA05029AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA05029AIRPRODUCTSANDCHEMICALSWaiverofPatentRigh...

234

WA_05_025_GE_NUCLEAR_ENERGY_Waiver_of_patent_Rights_Under_a_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5025GENUCLEARENERGYWaiverofpatentRightsUndera.pdf WA05025GENUCLEARENERGYWaiverofpatentRightsUndera.pdf WA05025GENUCLEARENERGYWaiverofpatentRightsUn...

235

WA_03_048_AMERICAN_SUPERCONDUCTOR_CORP_Waiver_of_Patent_Righ...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

48AMERICANSUPERCONDUCTORCORPWaiverofPatentRigh.pdf WA03048AMERICANSUPERCONDUCTORCORPWaiverofPatentRigh.pdf WA03048AMERICANSUPERCONDUCTORCORPWaiverofPatentR...

236

WA_03_021_DELPHI_AUTOMOTIVE_SYSTEMS_Waiver_of_Patent_Rights_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA03021DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA03021DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRight...

237

WA_06_033_PARKER_HANNIFIN_CORPORATION_Waiver_of_Patent_Right...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3PARKERHANNIFINCORPORATIONWaiverofPatentRight.pdf WA06033PARKERHANNIFINCORPORATIONWaiverofPatentRight.pdf WA06033PARKERHANNIFINCORPORATIONWaiverofPatentRig...

238

WA_07_015_UNITED_TECHNOLOGIES_CORP_Waiver_of_Patent_Rights_t...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

15UNITEDTECHNOLOGIESCORPWaiverofPatentRightst.pdf WA07015UNITEDTECHNOLOGIESCORPWaiverofPatentRightst.pdf WA07015UNITEDTECHNOLOGIESCORPWaiverofPatentRight...

239

WA_04_072_UNITED_TECHNOLOGIES_CORP_Waiverof_Patent_Rights_to...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2UNITEDTECHNOLOGIESCORPWaiverofPatentRightsto.pdf WA04072UNITEDTECHNOLOGIESCORPWaiverofPatentRightsto.pdf WA04072UNITEDTECHNOLOGIESCORPWaiverofPatentRights...

240

WA_1995_047_BLACK_CLAWSON_COMPANY_Waiver_of_Domestic_and_For...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7BLACKCLAWSONCOMPANYWaiverofDomesticandFor.pdf WA1995047BLACKCLAWSONCOMPANYWaiverofDomesticandFor.pdf WA1995047BLACKCLAWSONCOMPANYWaiverofDomesticandFor...

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

WA_98_020_THERMO_BLACK_CLAWSON_INC_Waiver_of_Domestic_and_Fo...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0THERMOBLACKCLAWSONINCWaiverofDomesticandFo.pdf WA98020THERMOBLACKCLAWSONINCWaiverofDomesticandFo.pdf WA98020THERMOBLACKCLAWSONINCWaiverofDomesticand...

242

WA_01_014_VOITH_FABRICS_APPLETON_Waiver_of_Domestic_and_Fore...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1014VOITHFABRICSAPPLETONWaiverofDomesticandFore.pdf WA01014VOITHFABRICSAPPLETONWaiverofDomesticandFore.pdf WA01014VOITHFABRICSAPPLETONWaiverofDomestican...

243

WA_98_019_SIEMENS_SOLAR_INDUSTRIES_Waiver_of_Domestic_and_Fo...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8019SIEMENSSOLARINDUSTRIESWaiverofDomesticandFo.pdf WA98019SIEMENSSOLARINDUSTRIESWaiverofDomesticandFo.pdf WA98019SIEMENSSOLARINDUSTRIESWaiverofDomestic...

244

WA_1995_030_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

30GOLDENPHOTONINCWaiverofDomesticandForeign.pdf WA1995030GOLDENPHOTONINCWaiverofDomesticandForeign.pdf WA1995030GOLDENPHOTONINCWaiverofDomesticandForeig...

245

WA_05_059_SHELL_SOLAR_INDUSTRIES_LP_Waiver_of_Domestic_and_F...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

59SHELLSOLARINDUSTRIESLPWaiverofDomesticandF.pdf WA05059SHELLSOLARINDUSTRIESLPWaiverofDomesticandF.pdf WA05059SHELLSOLARINDUSTRIESLPWaiverofDomestican...

246

WA_1995_002_SIEMENS_SOLAR_INDUSTRIES_Waiver_of_US_and_Foreig...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

02SIEMENSSOLARINDUSTRIESWaiverofUSandForeig.pdf WA1995002SIEMENSSOLARINDUSTRIESWaiverofUSandForeig.pdf WA1995002SIEMENSSOLARINDUSTRIESWaiverofUSandForei...

247

WA_00_028_LOUISIANA_PACIFIC_CORP_Waiver_of_Domestic_and_Fore...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0028LOUISIANAPACIFICCORPWaiverofDomesticandFore.pdf WA00028LOUISIANAPACIFICCORPWaiverofDomesticandFore.pdf WA00028LOUISIANAPACIFICCORPWaiverofDomestican...

248

WA_03_010_SHELL_SOLAR_INDUSTRIES_Waiver_of_Domestic_and_Fore...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

10SHELLSOLARINDUSTRIESWaiverofDomesticandFore.pdf WA03010SHELLSOLARINDUSTRIESWaiverofDomesticandFore.pdf WA03010SHELLSOLARINDUSTRIESWaiverofDomesticandF...

249

WA_98_008_GENERAL_ELECTRIC_COMPANY_Waiver_Under_a_Subcontrac...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA98008GENERALELECTRICCOMPANYWaiverUnderaSubcontrac.pdf WA98008GENERALELECTRICCOMPANYWaiverUnderaSubcontrac.pdf More Documents & Publications...

250

WA_01_019_GENERAL_ELECTRIC_CORP_Waiver_of_Domestic_and_Forei...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA01019GENERALELECTRICCORPWaiverofDomesticandForei.pdf WA01019GENERALELECTRICCORPWaiverofDomesticandForei.pdf More Documents & Publications...

251

WA_04_020_GENERAL_ELECTRIC_Waiver_of_Domestic_and_Foreign_In...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA04020GENERALELECTRICWaiverofDomesticandForeignIn.pdf WA04020GENERALELECTRICWaiverofDomesticandForeignIn.pdf More Documents & Publications...

252

WA_03_019_GENERAL_MOTORS_CORP_Waiver_of_Domestic_and_Foreign...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

SCORPWaiverofDomesticandForeign.pdf More Documents & Publications WA01019GENERALELECTRICCORPWaiverofDomesticandForei.pdf WA1993020GENERALMOTORSWaiverofDomest...

253

WA_04_075_VARIAN_MEDICAL_SYSTEMS_Waiver_of_Domestic_and_Fore...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

75VARIANMEDICALSYSTEMSWaiverofDomesticandFore.pdf WA04075VARIANMEDICALSYSTEMSWaiverofDomesticandFore.pdf WA04075VARIANMEDICALSYSTEMSWaiverofDomesticandF...

254

WA_1993_041_ROCKETDYNE_AND_LLNL_Waiver_of_the_Governments_U.pdf...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1ROCKETDYNEANDLLNLWaiveroftheGovernmentsU.pdf WA1993041ROCKETDYNEANDLLNLWaiveroftheGovernmentsU.pdf WA1993041ROCKETDYNEANDLLNLWaiveroftheGovernmentsU.pd...

255

WA_97_027_GENERAL_ATOMICS__CORPORATION_Waiver_of_Domestic_an...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

EDSOLARSYSTEMSCORPWaiverofDomesticandF.pdf WA01034INGERSOLL-RANDENERGYSYSTEMSWaiverofDomestica.pdf WA00003DUKESOLARENERGYWaiverofDomesticandForeignP.pdf...

256

BayWa Group | Open Energy Information  

Open Energy Info (EERE)

BayWa Group BayWa Group Jump to: navigation, search Name BayWa Group Place Munich, Germany Zip 81925 Sector Services, Solar Product Germany-based company with international operations specialised in wholesale and retail and in providing services. The company is also active in the biofuel and solar sectors. Coordinates 48.136415°, 11.577531° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":48.136415,"lon":11.577531,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

257

Long-wavelength laser based on self-assembled InAs quantum dots in InAlGaAs on InP (001)  

SciTech Connect

Seven stacks of self-assembled InAs quantum dots (QDs) separated by 28 nm thick InAlGaAs barriers were grown on InP (001) substrate by a solid-source molecular-beam epitaxy and were investigated by cross-sectional transmission electron microscopy and photoluminescence spectroscopy. Gain guided broad-area lasers with a stripe width of 75 {mu}m were fabricated by using the seven-stacked InAs QD layers with the InAlGaAs-InAlAs material system on InP (001). The lasing operation from InAs QDs was observed up to 260 K and the characteristic temperature of the uncoated QD laser calculated from the temperature dependence of threshold current density was 377 K for temperatures up to 200 K, and 138 K above 200 K. The drastic decrease in the characteristic temperature above 200 K was mainly related to the thermal behavior of carriers in QDs, and possibly the thermal coupling of the QDs to the wetting layer and the waveguide region.

Kim, Jin Soo; Lee, Jin Hong; Hong, Sung Ui; Han, Won Seok; Kwack, Ho-Sang; Lee, Chul Wook; Oh, Dae Kon [Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon (Korea, Republic of)

2004-08-09T23:59:59.000Z

258

LBNL-4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI  

NLE Websites -- All DOE Office Websites (Extended Search)

4183E-rev1 4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI IA AB BI IL LI IT TY Y I IN N C CA AL LI IF FO OR RN NI IA A: : E EN NV VI IR RO ON NM ME EN NT TA AL L I IM MP PA AC CT TS S A AN ND D D DE EV VI IC CE E P PE ER RF FO OR RM MA AN NC CE E E EX XP PE ER RI IM ME EN NT TA AL L E EV VA AL LU UA AT TI IO ON N O OF F I IN NS ST TA AL LL LE ED D C CO OO OK KI IN NG G E EX XH HA AU US ST T F FA AN N P PE ER RF FO OR RM MA AN NC CE E Brett C. Singer, William W. Delp and Michael G. Apte Indoor Environment Department Atmospheric Sciences Department Environmental Energy Technologies Division July 2011 (Revised February 2012) Disclaimer 1 This document was prepared as an account of work sponsored by the United States Government. While this document is believed to contain correct information, neither the United States Government nor any agency thereof, nor The Regents of the University of California, nor any of

259

,"Sumas, WA Natural Gas Pipeline Imports From Canada (MMcf)"  

U.S. Energy Information Administration (EIA) Indexed Site

Of Series","Frequency","Latest Data for" ,"Data 1","Sumas, WA Natural Gas Pipeline Imports From Canada (MMcf)",1,"Annual",2012 ,"Release Date:","172014" ,"Next...

260

Passivation of In{sub 0.53}Ga{sub 0.47}As/ZrO{sub 2} interfaces by AlN atomic layer deposition process  

SciTech Connect

Reducing defects at III-V/high-k interfaces is essential for optimizing devices built on these materials. Here, the role of an interfacial AlN process at In{sub 0.53}Ga{sub 0.47}As/ZrO{sub 2} interfaces is investigated by hard x-ray photoelectron spectroscopy (HAXPES) and capacitance/voltage (C-V) measurements. C-V measurements show a significant reduction in the density of interface traps with the interfacial AlN process and a capping TiN layer. To elucidate the specific role of the AlN process, blanket films with various deposition processes are compared. The AlN process alone (without subsequent dielectric deposition) reduces InGaAs oxide levels below the HAXPES detection limit, even though the AlN is ultimately found to be oxidized into AlO{sub x} with only trace N incorporation, yet AlN passivation provides a lower D{sub it} (density of interface traps) when compared with an H{sub 2}O-based Al{sub 2}O{sub 3} deposition. The AlN process does not passivate against re-oxidation of the InGaAs during an O{sub 3} based ZrO{sub 2} deposition process, but it does provide passivation against As-As development during subsequent TiN deposition. The role of chemical defects in the C-V characteristics is also discussed.

Weiland, C.; Woick, J. C. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Rumaiz, A. K. [National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973 (United States); Price, J.; Lysaght, P. [SEMATECH, 257 Fuller Road, Albany, New York 12203 (United States)

2013-07-21T23:59:59.000Z

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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261

Fourth Annual SECA Meeting - Seattle, WA  

NLE Websites -- All DOE Office Websites (Extended Search)

Fourth Annual SECA Meeting - Seattle, WA Fourth Annual SECA Meeting - Seattle, WA April 15-16, 2003 Table of Contents Disclaimer Papers and Presentations Expanded Applications of SECA Fuel Cells SECA Industrial Team Reports Military Applications of Fuel Cells Technology Highlights Environmental Considerations Disclaimer This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government or any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof.

262

Thickness Effect of Al-Doped ZnO Window Layer on Damp-Heat Stability of CuInGaSe2 Solar Cells  

DOE Green Energy (OSTI)

We investigated the damp heat (DH) stability of CuInGaSe{sub 2} (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 {micro}m to a modest 0.50 {micro}m over an underlying 0.10-{micro}m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 {micro}m/3 {micro}m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85 C and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

2011-01-01T23:59:59.000Z

263

Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint  

DOE Green Energy (OSTI)

We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 ?m to a modest 0.50 ?m over an underlying 0.10-?m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 ?m/3 ?m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

2011-07-01T23:59:59.000Z

264

Hanford, WA Selected as Plutonium Production Facility | National Nuclear  

National Nuclear Security Administration (NNSA)

Hanford, WA Selected as Plutonium Production Facility | National Nuclear Hanford, WA Selected as Plutonium Production Facility | National Nuclear Security Administration Our Mission Managing the Stockpile Preventing Proliferation Powering the Nuclear Navy Emergency Response Recapitalizing Our Infrastructure Continuing Management Reform Countering Nuclear Terrorism About Us Our Programs Our History Who We Are Our Leadership Our Locations Budget Our Operations Media Room Congressional Testimony Fact Sheets Newsletters Press Releases Speeches Events Social Media Video Gallery Photo Gallery NNSA Archive Federal Employment Apply for Our Jobs Our Jobs Working at NNSA Blog Home > About Us > Our History > NNSA Timeline > Hanford, WA Selected as Plutonium Production Facility Hanford, WA Selected as Plutonium Production Facility January 16, 1943 Hanford, WA

265

RECIPIENT:WA Department of Commerce STATE: WA PROJECT Van Dyk Dairy Anaerobic Digester  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

of5 of5 RECIPIENT:WA Department of Commerce STATE: WA PROJECT Van Dyk Dairy Anaerobic Digester TITLE: Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number cm Number DE-EE0000139 GF0-10-604 Based on my review oftbe information concerning the proposed action, as NEPA CompUance Officer (authorized under DOE Order 451.1A), I have made the foUowing determination: cx, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and demand studies), and dissemination (including, but not limited to, document mailings, publication, and distribution;

266

WA_00_013_GENECOR_INTERNATIONAL_Waiver_of_US_Competitiveness...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

& Publications WA01008NOVOZYMEBIOTECHWaiverofDomesticandForeignPa.pdf WA05006ABENGOABIOENERGYCORPORATIONWaiverofDomestica.pdf Class Patent Waiver W(C)2012-004...

267

WA_01-012_DETROIT_DIESEL_Waiver_of_Domestic_and_Foreign_Righ...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

-012DETROITDIESELWaiverofDomesticandForeignRigh.pdf WA01-012DETROITDIESELWaiverofDomesticandForeignRigh.pdf WA01-012DETROITDIESELWaiverofDomesticandForeign...

268

WA_1995_039_USABC_Waiver_of_Domestic_and_Foreign_Rights_Unde...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

ofDomesticandForeignRightsUnde.pdf More Documents & Publications WA1993032FORDMOTORCOMPANYWaiverofDomesticandForeig.pdf WA97038FORDMOTORCOMPANYWaiverofDomes...

269

WA_01-016_FORD_MOTOR_CO_Waive_of_Domestic_and_Foreign_Invent...  

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1-016FORDMOTORCOWaiveofDomesticandForeignInvent.pdf WA01-016FORDMOTORCOWaiveofDomesticandForeignInvent.pdf WA01-016FORDMOTORCOWaiveofDomesticandForeign...

270

Pages that link to "Category:Seattle, WA" | Open Energy Information  

Open Energy Info (EERE)

Share this page on Facebook icon Twitter icon Pages that link to "Category:Seattle, WA" Category:Seattle, WA Jump to: navigation, search What links here Page:...

271

WA_03_046_INTERMAGNETICS_GENERAL_CORP_Waiver_of_Domestic_and...  

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IGC-SUPERPOWERLLCWaiverofDomesticandForeign.pdf WA03028SUPERPOWERINCWaiverofPatentRightsUnderaDOE.pdf WA99008DUPONTSUPERCONDUCTIVITYWaiverofUSandForeign...

272

WA_03_001_CHEVRON_TEXACO_Waiver_of_Domestic_and_Foreign_Pate...  

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01CHEVRONTEXACOWaiverofDomesticandForeignPate.pdf WA03001CHEVRONTEXACOWaiverofDomesticandForeignPate.pdf WA03001CHEVRONTEXACOWaiverofDomesticandForeignP...

273

WA_1993_043_DETROIT_DEISEL_CORPORATION_Waiver_of_U.S._and_Fo...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

43DETROITDEISELCORPORATIONWaiverofU.S.andFo.pdf WA1993043DETROITDEISELCORPORATIONWaiverofU.S.andFo.pdf WA1993043DETROITDEISELCORPORATIONWaiverofU.S.andF...

274

WA_1993_034_CONSOLIDATED_NATURAL_GAS_(CNG)_Waiver_of_Domesti...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

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275

WA_02_032_DOW_CHEMICAL_CO_Waiver_of_Domestic_and_Foreign_Pat...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

32DOWCHEMICALCOWaiverofDomesticandForeignPat.pdf WA02032DOWCHEMICALCOWaiverofDomesticandForeignPat.pdf WA02032DOWCHEMICALCOWaiverofDomesticandForeign...

276

WA_1993_007_DOW_CHEMICAL_COMPANY_Waiver_of_U.S._and_Foreign_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1993007DOWCHEMICALCOMPANYWaiverofU.S.andForeign.pdf WA1993007DOWCHEMICALCOMPANYWaiverofU.S.andForeign.pdf WA1993007DOWCHEMICALCOMPANYWaiverofU.S.andF...

277

WA_01_002_CREE_LIGHTING_Waiver_of_Domestic_and_Foreign_Inven...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2CREELIGHTINGWaiverofDomesticandForeignInven.pdf WA01002CREELIGHTINGWaiverofDomesticandForeignInven.pdf WA01002CREELIGHTINGWaiverofDomesticandForeignInv...

278

WA_02_005_LUMILEDS_LIGHTING_Waiver_of_Domestic_and_Foreign_I...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2005LUMILEDSLIGHTINGWaiverofDomesticandForeignI.pdf WA02005LUMILEDSLIGHTINGWaiverofDomesticandForeignI.pdf WA02005LUMILEDSLIGHTINGWaiverofDomesticandFor...

279

WA_02_009_CONSOL_ENERGY_Multi_Pollutant_Emissions_Control-CL...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

02009CONSOLENERGYMultiPollutantEmissionsControl-CL.pdf WA02009CONSOLENERGYMultiPollutantEmissionsControl-CL.pdf WA02009CONSOLENERGYMultiPollutantEmissionsCon...

280

WA_06_021_UTC_FUEL_CELLS_LLC_Waiver_of_Patent_Rights_Under_a...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1UTCFUELCELLSLLCWaiverofPatentRightsUndera.pdf WA06021UTCFUELCELLSLLCWaiverofPatentRightsUndera.pdf WA06021UTCFUELCELLSLLCWaiverofPatentRightsUnder...

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281

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Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

39SHELLSOLARSYSTEMSWaiverofPatentRightsUnder.pdf WA02039SHELLSOLARSYSTEMSWaiverofPatentRightsUnder.pdf WA02039SHELLSOLARSYSTEMSWaiverofPatentRightsUnd...

282

WA_04_032_CARGILL_Waiver_of_Patent_Rights_under_PLATFORM_CHE...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

CARGILLINCWaiverofPatentRightsUnderACoopA.pdf WA04033CARGILLWaiverofPatentRightstoCARGILLDOWNL.pdf WA03032RWESCHOTTSOLARINCWaiverofPatentRightsUnder...

283

WA_03_032_RWE_SCHOTT_SOLAR_INC_Waiver_of_Patent_Rights_Under...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

32RWESCHOTTSOLARINCWaiverofPatentRightsUnder.pdf WA03032RWESCHOTTSOLARINCWaiverofPatentRightsUnder.pdf WA03032RWESCHOTTSOLARINCWaiverofPatentRightsUn...

284

WA_06_016_BP_SOLAR_INTERNATIONAL_Waiver_of_Patent_Rights_Und...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6BPSOLARINTERNATIONALWaiverofPatentRightsUnd.pdf WA06016BPSOLARINTERNATIONALWaiverofPatentRightsUnd.pdf WA06016BPSOLARINTERNATIONALWaiverofPatentRightsU...

285

WA_05_061_CATERPILLAR_INC_Waiver_of_Patent_Rihts_to_Inventio...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

61CATERPILLARINCWaiverofPatentRihtstoInventio.pdf WA05061CATERPILLARINCWaiverofPatentRihtstoInventio.pdf WA05061CATERPILLARINCWaiverofPatentRihtstoInven...

286

WA_04_007_OSHKOSH_TRUCK_CORP_Waiver_of_Patent_Rights_Under_N...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

07OSHKOSHTRUCKCORPWaiverofPatentRightsUnderN.pdf WA04007OSHKOSHTRUCKCORPWaiverofPatentRightsUnderN.pdf WA04007OSHKOSHTRUCKCORPWaiverofPatentRightsUnde...

287

WA_02_055_PRAXAIR_Waiver_of_Domestic_and_Foreign_Patent_Righ...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02055PRAXAIRWaiverofDomesticandForeignPatentRi...

288

WA_04_067_CATRPILLAR_INC_Waiver_of_Patent_Rights_to_Inventio...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

67CATRPILLARINCWaiverofPatentRightstoInventio.pdf WA04067CATRPILLARINCWaiverofPatentRightstoInventio.pdf WA04067CATRPILLARINCWaiverofPatentRightstoInven...

289

WA_03_022_DELPHI_AUTO_SYSTEMS_Waiver_of_Patent_Rights_to_Inv...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2DELPHIAUTOSYSTEMSWaiverofPatentRightstoInv.pdf WA03022DELPHIAUTOSYSTEMSWaiverofPatentRightstoInv.pdf WA03022DELPHIAUTOSYSTEMSWaiverofPatentRightstoI...

290

WA_02_043_EMCORE_CORP_Waiver_of_Patent_Rights_Under_A_Subcon...  

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3EMCORECORPWaiverofPatentRightsUnderASubcon.pdf WA02043EMCORECORPWaiverofPatentRightsUnderASubcon.pdf WA02043EMCORECORPWaiverofPatentRightsUnderASubc...

291

WA_02_051_AQUA_CHEM_INC_Waiver_of_Patent_Rights_Under_A_Subc...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1AQUACHEMINCWaiverofPatentRightsUnderASubc.pdf WA02051AQUACHEMINCWaiverofPatentRightsUnderASubc.pdf WA02051AQUACHEMINCWaiverofPatentRightsUnderASu...

292

WA_00_008_PLUG_POWER_Waiver_of_Patent_Rights_in_Performance_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0008PLUGPOWERWaiverofPatentRightsinPerformance.pdf WA00008PLUGPOWERWaiverofPatentRightsinPerformance.pdf WA00008PLUGPOWERWaiverofPatentRightsinPerfor...

293

WA_05_026_GE_NUCLEAR_ENERGY_Waiver_of_Patent_Rights_Under_a_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6GENUCLEARENERGYWaiverofPatentRightsUndera.pdf WA05026GENUCLEARENERGYWaiverofPatentRightsUndera.pdf WA05026GENUCLEARENERGYWaiverofPatentRightsUnder...

294

WA_05_041_MACK_TRUCKS_INC_Waiver_of_Patent_Rights_to_Inventi...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1MACKTRUCKSINCWaiverofPatentRightstoInventi.pdf WA05041MACKTRUCKSINCWaiverofPatentRightstoInventi.pdf WA05041MACKTRUCKSINCWaiverofPatentRightstoInven...

295

WA_03_027_SUPERPOWER_INC_Waiver_of_Patent_Rights_Under_a_DOE...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7SUPERPOWERINCWaiverofPatentRightsUnderaDOE.pdf WA03027SUPERPOWERINCWaiverofPatentRightsUnderaDOE.pdf WA03027SUPERPOWERINCWaiverofPatentRightsUnderaD...

296

WA_04_058_SOLUTIA_INC_Waiver_of_Patent_Rights_Under_a_DOE_Co...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8SOLUTIAINCWaiverofPatentRightsUnderaDOECo.pdf WA04058SOLUTIAINCWaiverofPatentRightsUnderaDOECo.pdf WA04058SOLUTIAINCWaiverofPatentRightsUnderaDOE...

297

WA_04_031_ROHM_AND_HAAS_Waiver_of_Patent_Rights_under_NEW_SU...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

31ROHMANDHAASWaiverofPatentRightsunderNEWSU.pdf WA04031ROHMANDHAASWaiverofPatentRightsunderNEWSU.pdf WA04031ROHMANDHAASWaiverofPatentRightsunderNEW...

298

WA_05_009_LUCENT_TECHNOLOGIES_INC_Waiver_of_Patent_Rights_Un...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

09LUCENTTECHNOLOGIESINCWaiverofPatentRightsUn.pdf WA05009LUCENTTECHNOLOGIESINCWaiverofPatentRightsUn.pdf WA05009LUCENTTECHNOLOGIESINCWaiverofPatentRights...

299

WA_04_061_ROHM_AND_HAAS_COMPANY_Waiver_of_Patent_Rights_Unde...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

61ROHMANDHAASCOMPANYWaiverofPatentRightsUnde.pdf WA04061ROHMANDHAASCOMPANYWaiverofPatentRightsUnde.pdf WA04061ROHMANDHAASCOMPANYWaiverofPatentRightsU...

300

WA_06_009_UNIVERSITY_OF_MINNESOTA_Waiver_of_Patent_Rights--W...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9UNIVERSITYOFMINNESOTAWaiverofPatentRights--W.pdf WA06009UNIVERSITYOFMINNESOTAWaiverofPatentRights--W.pdf WA06009UNIVERSITYOFMINNESOTAWaiverofPatentRights-...

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301

WA_02_047_SOUTHWIRE_CO_Waiver_of_Patent_Rights_Under_A_Coope...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2047SOUTHWIRECOWaiverofPatentRightsUnderACoope.pdf WA02047SOUTHWIRECOWaiverofPatentRightsUnderACoope.pdf WA02047SOUTHWIRECOWaiverofPatentRightsUnderA...

302

WA_04_064_VELOCYS_INC_Waiver_of_Patent_Rgiths_Under_a_DOE_Co...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

64VELOCYSINCWaiverofPatentRgithsUnderaDOECo.pdf WA04064VELOCYSINCWaiverofPatentRgithsUnderaDOECo.pdf WA04064VELOCYSINCWaiverofPatentRgithsUnderaDOE...

303

WA_00_031_HONEYWELL_Waiver_Domestic_and_Foreign_Patent_Right...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

31HONEYWELLWaiverDomesticandForeignPatentRight.pdf WA00031HONEYWELLWaiverDomesticandForeignPatentRight.pdf WA00031HONEYWELLWaiverDomesticandForeignPatentRi...

304

WA_98_010_SOLAREX_Waiver_of_of_Patent_Rights_Under_an_NREL_S...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8010SOLAREXWaiverofofPatentRightsUnderanNRELS.pdf WA98010SOLAREXWaiverofofPatentRightsUnderanNRELS.pdf WA98010SOLAREXWaiverofofPatentRightsUnderan...

305

WA_07_020_GENERAL_ELECTRIC_CO_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0GENERALELECTRICCOWaiverofPatentRightsUnder.pdf WA07020GENERALELECTRICCOWaiverofPatentRightsUnder.pdf WA07020GENERALELECTRICCOWaiverofPatentRightsUnde...

306

WA_05_021_UNITED_TECHNOLOGIES_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1UNITEDTECHNOLOGIESWaiverofPatentRightsUnder.pdf WA05021UNITEDTECHNOLOGIESWaiverofPatentRightsUnder.pdf WA05021UNITEDTECHNOLOGIESWaiverofPatentRightsUnde...

307

WA_06_015_PPG_INDUSTRIES_Waiver_of_Patent_Rights_Under_a_DOE...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5PPGINDUSTRIESWaiverofPatentRightsUnderaDOE.pdf WA06015PPGINDUSTRIESWaiverofPatentRightsUnderaDOE.pdf WA06015PPGINDUSTRIESWaiverofPatentRightsUnderaD...

308

WA_04_029_UOP_LLC_Waiver_of_Patent_Rights_under_DISCOVERY_OF...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9UOPLLCWaiverofPatentRightsunderDISCOVERYOF.pdf WA04029UOPLLCWaiverofPatentRightsunderDISCOVERYOF.pdf WA04029UOPLLCWaiverofPatentRightsunderDISCOVERY...

309

WA_04_033_CARGILL_Waiver_of_Patent_Rights_to_CARGILL_DOWN_L.pdf...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3CARGILLWaiverofPatentRightstoCARGILLDOWNL.pdf WA04033CARGILLWaiverofPatentRightstoCARGILLDOWNL.pdf WA04033CARGILLWaiverofPatentRightstoCARGILLDOWNL....

310

WA_03_004_CARGILL_INC_Waiver_of_Patent_Rights_Under_A_Coop_A...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

04CARGILLINCWaiverofPatentRightsUnderACoopA.pdf WA03004CARGILLINCWaiverofPatentRightsUnderACoopA.pdf WA03004CARGILLINCWaiverofPatentRightsUnderACoo...

311

WA_04_047_CATERPILLAR_INC_Waiver_of_Patent_Rights_to_Inventi...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

47CATERPILLARINCWaiverofPatentRightstoInventi.pdf WA04047CATERPILLARINCWaiverofPatentRightstoInventi.pdf WA04047CATERPILLARINCWaiverofPatentRightstoInve...

312

WA_04_044_GENERAL_MOTORS_CORP_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

44GENERALMOTORSCORPWaiverofPatentRightsUnder.pdf WA04044GENERALMOTORSCORPWaiverofPatentRightsUnder.pdf WA04044GENERALMOTORSCORPWaiverofPatentRightsUnd...

313

WA_05_027_WESTINGHOUSE_Waiver_of_Patent_Rights_Under_a_Subco...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7WESTINGHOUSEWaiverofPatentRightsUnderaSubco.pdf WA05027WESTINGHOUSEWaiverofPatentRightsUnderaSubco.pdf WA05027WESTINGHOUSEWaiverofPatentRightsUnderaSub...

314

WA_04_037_VELOCCYS_INC_Waiver_of_Patent_Rights_Under_a_DOE_C...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

37VELOCCYSINCWaiverofPatentRightsUnderaDOEC.pdf WA04037VELOCCYSINCWaiverofPatentRightsUnderaDOEC.pdf WA04037VELOCCYSINCWaiverofPatentRightsUnderaDO...

315

WA_99_012_AIR_PRODUCTS_Waiver_of_Patent_Rights_Under_AN_NVO_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9012AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderA...

316

WA_03_002_3M_COMPANY_Waiver_of_Patent_Rights_Under_A_DOE_Coo...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

30023MCOMPANYWaiverofPatentRightsUnderADOECoo.pdf WA030023MCOMPANYWaiverofPatentRightsUnderADOECoo.pdf WA030023MCOMPANYWaiverofPatentRightsUnderAD...

317

WA_04_038_3M_COMPANY__Waiver_of_Patent_Rights_Under_a_DOE_Co...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

83MCOMPANYWaiverofPatentRightsUnderaDOECo.pdf WA040383MCOMPANYWaiverofPatentRightsUnderaDOECo.pdf WA040383MCOMPANYWaiverofPatentRightsUnderaDOE...

318

WA_07_001_EASTMAN_KODAK_COMPANY_Waiver_of_Patent_Rights_Unde...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

01EASTMANKODAKCOMPANYWaiverofPatentRightsUnde.pdf WA07001EASTMANKODAKCOMPANYWaiverofPatentRightsUnde.pdf WA07001EASTMANKODAKCOMPANYWaiverofPatentRightsU...

319

WA_04_071_CATERPILLAR_INC_Waiver_of_Patent_Rights_to_Inventi...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1CATERPILLARINCWaiverofPatentRightstoInventi.pdf WA04071CATERPILLARINCWaiverofPatentRightstoInventi.pdf WA04071CATERPILLARINCWaiverofPatentRightstoInven...

320

WA_03_031_UNITED_TECHNOLOGIES_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3031UNITEDTECHNOLOGIESWaiverofPatentRightsUnder.pdf WA03031UNITEDTECHNOLOGIESWaiverofPatentRightsUnder.pdf WA03031UNITEDTECHNOLOGIESWaiverofPatentRights...

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321

WA_04_081_GENERAL_ELECTRIC_COMPANY_Waiver_of_Patent_Rights_U...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1GENERALELECTRICCOMPANYWaiverofPatentRightsU.pdf WA04081GENERALELECTRICCOMPANYWaiverofPatentRightsU.pdf WA04081GENERALELECTRICCOMPANYWaiverofPatentRights...

322

WA_06_026_CREE_INC_Waiver_of_Patent_Rights_Under_a_Subcontra...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6CREEINCWaiverofPatentRightsUnderaSubcontra.pdf WA06026CREEINCWaiverofPatentRightsUnderaSubcontra.pdf WA06026CREEINCWaiverofPatentRightsUnderaSubcont...

323

WA_03_028_SUPERPOWER_INC_Waiver_of_Patent_Rights_Under_a_DOE...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8SUPERPOWERINCWaiverofPatentRightsUnderaDOE.pdf WA03028SUPERPOWERINCWaiverofPatentRightsUnderaDOE.pdf WA03028SUPERPOWERINCWaiverofPatentRightsUnderaD...

324

WA_01_030_GENERAL_ELECTRIC_CO_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0GENERALELECTRICCOWaiverofPatentRightsUnder.pdf WA01030GENERALELECTRICCOWaiverofPatentRightsUnder.pdf WA01030GENERALELECTRICCOWaiverofPatentRightsUnde...

325

WA_02_048_EATON_CORPORATION_Waviver_of_Patent_Rights_Under_A...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2048EATONCORPORATIONWaviverofPatentRightsUnderA.pdf WA02048EATONCORPORATIONWaviverofPatentRightsUnderA.pdf WA02048EATONCORPORATIONWaviverofPatentRightsU...

326

WA_00_009_ARTHUR_D_LITTLE_Waiver_of_Patent_Rights_in_Perform...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9ARTHURDLITTLEWaiverofPatentRightsinPerform.pdf WA00009ARTHURDLITTLEWaiverofPatentRightsinPerform.pdf WA00009ARTHURDLITTLEWaiverofPatentRightsinPerfo...

327

WA_05_052_CATERPILLAR_INC_Waiver_of_Patent_Rights_to_Inventi...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

52CATERPILLARINCWaiverofPatentRightstoInventi.pdf WA05052CATERPILLARINCWaiverofPatentRightstoInventi.pdf WA05052CATERPILLARINCWaiverofPatentRightstoInve...

328

WA_02_029_CUMMINS_ENGINE_CO_Waiver_of_Patent_Rights_Under_DO...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

29CUMMINSENGINECOWaiverofPatentRightsUnderDO.pdf WA02029CUMMINSENGINECOWaiverofPatentRightsUnderDO.pdf WA02029CUMMINSENGINECOWaiverofPatentRightsUnder...

329

WA_04_011_KENNAMETAL_INC_Waiver_of_Patent_Rights_Under_Subco...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

11KENNAMETALINCWaiverofPatentRightsUnderSubco.pdf WA04011KENNAMETALINCWaiverofPatentRightsUnderSubco.pdf WA04011KENNAMETALINCWaiverofPatentRightsUnderSu...

330

WA_06_027_EASTMAN_KODAK_COMPANY_Waiver_of_Patent_Rights_Unde...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7EASTMANKODAKCOMPANYWaiverofPatentRightsUnde.pdf WA06027EASTMANKODAKCOMPANYWaiverofPatentRightsUnde.pdf WA06027EASTMANKODAKCOMPANYWaiverofPatentRightsUn...

331

WA_2006_007_SOLVEY_OLEXIS_SpA_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2006007SOLVEYOLEXISSpAWaiverofPatentRightsUnder.pdf WA2006007SOLVEYOLEXISSpAWaiverofPatentRightsUnder.pdf WA2006007SOLVEYOLEXISSpAWaiverofPatentRights...

332

WA_06_014_PPG_INDUSTRIES_INC_Waiver_of_Patent_Rights_Under_a...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4PPGINDUSTRIESINCWaiverofPatentRightsUndera.pdf WA06014PPGINDUSTRIESINCWaiverofPatentRightsUndera.pdf WA06014PPGINDUSTRIESINCWaiverofPatentRightsUnder...

333

WA_05_030_BOC_GROUP_Waiver_of_Patent_Rights_Under_a_DOE_Co-O...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0BOCGROUPWaiverofPatentRightsUnderaDOECo-O.pdf WA05030BOCGROUPWaiverofPatentRightsUnderaDOECo-O.pdf WA05030BOCGROUPWaiverofPatentRightsUnderaDOECo...

334

WA_04_008_GENERAL_MOTORS_CORP_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

08GENERALMOTORSCORPWaiverofPatentRightsUnder.pdf WA04008GENERALMOTORSCORPWaiverofPatentRightsUnder.pdf WA04008GENERALMOTORSCORPWaiverofPatentRightsUnd...

335

WA_04_016_MACK_TRUCKS_Waiver_of_Patent_Rights_under_NREL_Sub...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

16MACKTRUCKSWaiverofPatentRightsunderNRELSub.pdf WA04016MACKTRUCKSWaiverofPatentRightsunderNRELSub.pdf WA04016MACKTRUCKSWaiverofPatentRightsunderNREL...

336

WA_03_035_CATERPILLAR_INC_Waiver_of_Patent_Rights_Under_a_DO...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3035CATERPILLARINCWaiverofPatentRightsUnderaDO.pdf WA03035CATERPILLARINCWaiverofPatentRightsUnderaDO.pdf WA03035CATERPILLARINCWaiverofPatentRightsUnde...

337

WA_04_079_PRAXAIR_INC_Waiver_of_Patent_Rights_Under_a_Subcon...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

79PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf WA04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf WA04079PRAXAIRINCWaiverofPatentRightsUnderaSub...

338

WA_00_020_PRAXAIR_Waiver_of_Domestic_and_Foreign_Patent_Righ...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

20PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA00020PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA00020PRAXAIRWaiverofDomesticandForeignPatentR...

339

WA_04_062_ROHM_AND_HAAS_COMPANY_Waiver_of_Patent_Rights_Unde...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2ROHMANDHAASCOMPANYWaiverofPatentRightsUnde.pdf WA04062ROHMANDHAASCOMPANYWaiverofPatentRightsUnde.pdf WA04062ROHMANDHAASCOMPANYWaiverofPatentRightsUn...

340

WA_04_039_HONEYWELL_INTERNATIONAL_Waiver_of_Patent_Rights_Un...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9HONEYWELLINTERNATIONALWaiverofPatentRightsUn.pdf WA04039HONEYWELLINTERNATIONALWaiverofPatentRightsUn.pdf WA04039HONEYWELLINTERNATIONALWaiverofPatentRights...

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
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341

WA_06_018_GENERAL_ELECTRIC_COMPANY_Waiver_of_Patent_Rights_U...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8GENERALELECTRICCOMPANYWaiverofPatentRightsU.pdf WA06018GENERALELECTRICCOMPANYWaiverofPatentRightsU.pdf WA06018GENERALELECTRICCOMPANYWaiverofPatentRights...

342

WA_01_039_PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_Patent_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9PRAXAIRINCWaiverofDomesticandForeignPatent.pdf WA01039PRAXAIRINCWaiverofDomesticandForeignPatent.pdf WA01039PRAXAIRINCWaiverofDomesticandForeignPaten...

343

WA_03_026_EI_DUPONT_DENEMOURS_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

26EIDUPONTDENEMOURSWaiverofPatentRightsUnder.pdf WA03026EIDUPONTDENEMOURSWaiverofPatentRightsUnder.pdf WA03026EIDUPONTDENEMOURSWaiverofPatentRightsUnd...

344

WA_04_027_GENERAL_ELECTRIC_Waiver_of_Patent_Rights_for_DISTR...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7GENERALELECTRICWaiverofPatentRightsforDISTR.pdf WA04027GENERALELECTRICWaiverofPatentRightsforDISTR.pdf WA04027GENERALELECTRICWaiverofPatentRightsforDIS...

345

WA_02_033_GENERAL_ELECTRIC_Waiver_of_Patent_Rights_Under_DOE...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

33GENERALELECTRICWaiverofPatentRightsUnderDOE.pdf WA02033GENERALELECTRICWaiverofPatentRightsUnderDOE.pdf WA02033GENERALELECTRICWaiverofPatentRightsUnder...

346

WA_06_020_ARIZONA_PUBLIC_SERVICE_Waivier_of_Patent_Rights_Un...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0ARIZONAPUBLICSERVICEWaivierofPatentRightsUn.pdf WA06020ARIZONAPUBLICSERVICEWaivierofPatentRightsUn.pdf WA06020ARIZONAPUBLICSERVICEWaivierofPatentRights...

347

WA_06_029_GENSCAPE_INC_Waiver_of_Patent_Rights_Under_a_Subco...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9GENSCAPEINCWaiverofPatentRightsUnderaSubco.pdf WA06029GENSCAPEINCWaiverofPatentRightsUnderaSubco.pdf WA06029GENSCAPEINCWaiverofPatentRightsUnderaSub...

348

WA_98_007_SOLAREX_Waiver_of_Domestic_and_Foreign_Patent_Righ...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7SOLAREXWaiverofDomesticandForeignPatentRigh.pdf WA98007SOLAREXWaiverofDomesticandForeignPatentRigh.pdf WA98007SOLAREXWaiverofDomesticandForeignPatentRi...

349

WA_03_011_ROCKWELL_AUTOMATION_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA03011ROCKWELLAUTOMATIONWaiverofPatentRights...

350

WA_04_059_EATON_CORPORATION_Waiver_of_Patent_Rights_Under_a_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9EATONCORPORATIONWaiverofPatentRightsUndera.pdf WA04059EATONCORPORATIONWaiverofPatentRightsUndera.pdf WA04059EATONCORPORATIONWaiverofPatentRightsUnder...

351

WA_06_013_McDERMOTT_TECHNOLOGY_INC_Waiver_of_Patent_Rights_t...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3McDERMOTTTECHNOLOGYINCWaiverofPatentRightst.pdf WA06013McDERMOTTTECHNOLOGYINCWaiverofPatentRightst.pdf WA06013McDERMOTTTECHNOLOGYINCWaiverofPatentRights...

352

WA_02_030_OXFORD_INSTRUMENTS_Waiver_of_Patent_Rights_under_D...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

30OXFORDINSTRUMENTSWaiverofPatentRightsunderD.pdf WA02030OXFORDINSTRUMENTSWaiverofPatentRightsunderD.pdf WA02030OXFORDINSTRUMENTSWaiverofPatentRightsunde...

353

WA_1993_020_GENERAL_MOTORS_Waiver_of_Domestic_and_Foreign_Ri...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

ORSWaiverofDomesticandForeignRi.pdf More Documents & Publications WA04020GENERALELECTRICWaiverofDomesticandForeignIn.pdf WA03019GENERALMOTORSCORPWaiverofDom...

354

WA_00_003_DUKE_SOLAR_ENERGY_Waiver_of_Domestic_and_Foreign_P...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0003DUKESOLARENERGYWaiverofDomesticandForeignP.pdf WA00003DUKESOLARENERGYWaiverofDomesticandForeignP.pdf WA00003DUKESOLARENERGYWaiverofDomesticandFor...

355

WA_1993_038_TEXAS_INSTRUMENTS_INC_Waiver_of_U.S._and_Foreign...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8TEXASINSTRUMENTSINCWaiverofU.S.andForeign.pdf WA1993038TEXASINSTRUMENTSINCWaiverofU.S.andForeign.pdf WA1993038TEXASINSTRUMENTSINCWaiverofU.S.andForeign...

356

Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m-plane Al{sub x}Ga{sub 1-x}N films grown on m-plane freestanding GaN substrates by NH{sub 3} source molecular beam epitaxy  

SciTech Connect

In-plane anisotropic lattice relaxation was correlated with the crystal mosaicity and luminescence spectra for m-plane Al{sub x}Ga{sub 1-x}N films grown on a freestanding GaN substrate by NH{sub 3}-source molecular beam epitaxy. The homoepitaxial GaN film exhibited A- and B-excitonic emissions at 8 K, which obeyed the polarization selection rules. For Al{sub x}Ga{sub 1-x}N overlayers, the m-plane tilt mosaic along c-axis was the same as the substrate as far as coherent growth was maintained (x{<=}0.25). However, it became more severe than along the a-axis for lattice-relaxed films (x{>=}0.52). The results are explained in terms of anisotropic lattice and thermal mismatches between the film and the substrate. Nonetheless, all the Al{sub x}Ga{sub 1-x}N films exhibited a near-band-edge emission peak and considerably weak deep emission at room temperature.

Hoshi, T.; Hazu, K.; Ohshita, K.; Kagaya, M.; Onuma, T.; Chichibu, S. F. [CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan); Fujito, K. [Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku 300-1295 (Japan); Namita, H. [Mitsubishi Chemical Group Science and Technology Research Center, Inc., 8-3-1 Chuo, Ami, Inashiki 300-0332 (Japan)

2009-02-16T23:59:59.000Z

357

Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs  

E-Print Network (OSTI)

. heavily doped GaAs 001 substrates at 650 °C with TMG Ga CH3 3 and arsine AsH3 V/III=23 with disilane Si2H6

358

Y2, Threading Defect Elimination in GaN Nanostructures  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

359

W(A)94-022 STATEMENT OF CONSIDERATIONS  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

W(A)94-022 STATEMENT OF CONSIDERATIONS Request by Cummins Power Generation, Inc., for an Advance Waiver of Domestic and Foreign Patent Rights to Inventions made under a contract...

360

BayWa Sunways JV | Open Energy Information  

Open Energy Info (EERE)

JV that specialises in developing, planning and realizing medium-sized to large photovoltaic systems and solar plants. References BayWa & Sunways JV1 LinkedIn Connections...

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Isotopic Studies of Contaminant Transport at the Hanford Site, WA  

E-Print Network (OSTI)

MR-0132. Westinghouse Hanford Company, Richland WA. Bretz,in recharge at the Hanford Site. Northwest Science. 66:237-M.J. , ed. 2000. Hanford Site groundwater Monitoring

Christensen, J.N.; Conrad, M.E.; DePaolo, D.J.; Dresel, P.E.

2008-01-01T23:59:59.000Z

362

Accelerated aging of GaAs concentrator solar cells  

DOE Green Energy (OSTI)

An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

Gregory, P.E.

1982-04-01T23:59:59.000Z

363

Effective passivation of In{sub 0.2}Ga{sub 0.8}As by HfO{sub 2} surpassing Al{sub 2}O{sub 3} via in-situ atomic layer deposition  

SciTech Connect

High {kappa} gate dielectrics of HfO{sub 2} and Al{sub 2}O{sub 3} were deposited on molecular beam epitaxy-grown In{sub 0.2}Ga{sub 0.8}As pristine surface using in-situ atomic-layer-deposition (ALD) without any surface treatment or passivation layer. The ALD-HfO{sub 2}/p-In{sub 0.2}Ga{sub 0.8}As interface showed notable reduction in the interfacial density of states (D{sub it}), deduced from quasi-static capacitance-voltage and conductance-voltage (G-V) at room temperature and 100 Degree-Sign C. More significantly, the midgap peak commonly observed in the D{sub it}(E) of ALD-oxides/In{sub 0.2}Ga{sub 0.8}As is now greatly diminished. The midgap D{sub it} value decreases from {>=}15 Multiplication-Sign 10{sup 12} eV{sup -1} cm{sup -2} for ALD-Al{sub 2}O{sub 3} to {approx}2-4 Multiplication-Sign 10{sup 12} eV{sup -1} cm{sup -2} for ALD-HfO{sub 2}. Further, thermal stability at 850 Degree-Sign C was achieved in the HfO{sub 2}/In{sub 0.2}Ga{sub 0.8}As, whereas C-V characteristics of Al{sub 2}O{sub 3}/p-In{sub 0.2}Ga{sub 0.8}As degraded after the high temperature annealing. From in-situ x-ray photoelectron spectra, the AsO{sub x}, which is not the oxidized state from the native oxide, but is an induced state from adsorption of trimethylaluminum and H{sub 2}O, was found at the ALD-Al{sub 2}O{sub 3}/In{sub 0.2}Ga{sub 0.8}As interface, while that was not detected at the ALD-HfO{sub 2}/In{sub 0.2}Ga{sub 0.8}As interface.

Chang, Y. H.; Chiang, T. H. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, C. A.; Liu, Y. T.; Lin, H. Y.; Huang, M. L.; Kwo, J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M. [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

2012-10-22T23:59:59.000Z

364

Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount  

SciTech Connect

Vertical and flip-chip light-emitting diode (LED) chips are compared from the viewpoint of the behavior of current spreading in the active region and the distribution of local temperatures and thermal resistances of chips. AlGaInN LED chips of vertical design are fabricated using Si as a submount and LED flipchips were fabricated with the removal of a sapphire substrate. The latter are also mounted on a Si submount. The active regions of both chips are identical and are about 1 mm{sup 2} in size. It is shown that both the emittance of the crystal surface in the visible range and the distribution of local temperatures estimated from radiation in the infrared region are more uniform in crystals of vertical design. Heat removal from flip-chips is insufficient in regions of the n contact, which do not possess good thermal contact with the submount. As a result, the total thermal resistances between the p-n junction and the submount both for the vertical chips and for flip-chips are approximately 1 K/W. The total area of the flip-chips exceeds that of the vertical design chips by a factor of 1.4.

Markov, L. K., E-mail: l.markov@mail.ioffe.ru; Smirnova, I. P.; Pavlyuchenko, A. S. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kukushkin, M. V.; Vasil'eva, E. D. [ZAO Innovation 'Tetis' (Russian Federation); Chernyakov, A. E. [Russian Academy of Sciences, Science-and-Technology Microelectronics Center (Russian Federation); Usikov, A. S. [De Core Nanosemiconductors Ltd. (India)

2013-03-15T23:59:59.000Z

365

Ga Air Compressor, Ga Air Compressor Products, Ga Air ...  

U.S. Energy Information Administration (EIA)

Ga Air Compressor, You Can Buy Various High Quality Ga Air Compressor Products from Global Ga Air Compressor Suppliers and Ga Air Compressor ...

366

GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide  

SciTech Connect

The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Alian, A.; Heyns, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Afanas'ev, V. V. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium)

2011-04-01T23:59:59.000Z

367

WA S C2 0 01 Handbook of  

E-Print Network (OSTI)

WA S C2 0 01 Handbook of Accreditation #12;The Western Association of Schools and Colleges be terminated, or when the Commission formally acts to terminate accreditation. This Handbook of Accreditation associations and related bodies, see pages 118­119. #12;HANDBOOK OF ACCREDITATION Standards Addressing Core

California at Santa Cruz, University of

368

DOE - Office of Legacy Management -- University of Washington - WA 0-01  

Office of Legacy Management (LM)

Washington - WA 0-01 Washington - WA 0-01 FUSRAP Considered Sites Site: UNIVERSITY OF WASHINGTON (WA.0-01) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Seattle , Washington WA.0-01-1 Evaluation Year: 1987 WA.0-01-1 Site Operations: Research activities involving small quantities of radioactive materials in a controlled environment. WA.0-01-1 Site Disposition: Eliminated - Potential for residual radioactive contamination considered remote - Operating under active NRC license WA.0-01-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: None Indicated WA.0-01-1 Radiological Survey(s): None Indicated Site Status: Eliminated from further consideration under FUSRAP Also see

369

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project...

370

WA_06_017_Waiver_of_The_Govt_US_and_Foreign_Patent_Rights_fo...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7WaiverofTheGovtUSandForeignPatentRightsfo.pdf WA06017WaiverofTheGovtUSandForeignPatentRightsfo.pdf WA06017WaiverofTheGovtUSandForeignPatentRights...

371

Electron transport in an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well with a {delta}-Si doped barrier in high electric fields  

Science Conference Proceedings (OSTI)

The electron conduction in a two-dimensional channel of an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well (QW) with a {delta}-Si doped barrier has been investigated. It is shown that the introduction of thin InAs barriers into the QW reduces the electron scattering rate from the polar optical and interface phonons localized in the QW and increases the electron mobility. It is found experimentally that the saturation of the conduction current in the In{sub 0.53}Ga{sub 0.47}As channel in strong electric fields is determined by not only the sublinear field dependence of the electron drift velocity, but also by the decrease in the electron concentration n{sub s} with an increase in the voltage across the channel. The dependence of n{sub s} on the applied voltage is due to the ionized-donor layer located within the {delta}-Si doped In{sub 0.52}Al{sub 0.48}As barrier and oriented parallel to the In{sub 0.53}Ga{sub 0.47}As QW.

Vasil'evskii, I. S.; Galiev, G. B.; Matveev, Yu. A.; Klimov, E. A.; Pozela, J., E-mail: pozela@pfi.lt [Russian Academy of Sciences, Institute of Microwave Semiconductor Electronics (Russian Federation); Pozela, K.; Suziedelis, A.; Paskevic, C.; Juciene, V. [Semiconductor Physics Institute (Lithuania)

2010-07-15T23:59:59.000Z

372

P8, Fabrication of Subwavelength Pillar Arrays on GaAs by Confined ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

373

File:INL-geothermal-wa.pdf | Open Energy Information  

Open Energy Info (EERE)

wa.pdf wa.pdf Jump to: navigation, search File File history File usage Washington Geothermal Resources Size of this preview: 699 × 600 pixels. Full resolution ‎(4,835 × 4,147 pixels, file size: 3.28 MB, MIME type: application/pdf) Description Washington Geothermal Resources Sources Idaho National Laboratory Authors Patrick Laney; Julie Brizzee Related Technologies Geothermal Creation Date 2003-11-01 Extent State Countries United States UN Region Northern America States Washington File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 12:45, 16 December 2010 Thumbnail for version as of 12:45, 16 December 2010 4,835 × 4,147 (3.28 MB) MapBot (Talk | contribs) Automated upload from NREL's "mapsearch" data

374

GRR/Section 15-WA-a - Air Quality Notice of Construction Permit | Open  

Open Energy Info (EERE)

5-WA-a - Air Quality Notice of Construction Permit 5-WA-a - Air Quality Notice of Construction Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 15-WA-a - Air Quality Notice of Construction Permit 15-WA-a - Air Quality Notice of Construction Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies WAC 173-400-110 WAC 173-400-111 WAC 173-400-171 Triggers None specified This flowchart illustrates the process for obtaining an Air Quality Notice of Construction Permit. The Washington State Department of Ecology (WSDE) oversees the permitting process under WAC 173-400. 15-WA-a - Air Quality Notice of Construction Permit.pdf 15-WA-a - Air Quality Notice of Construction Permit.pdf 15-WA-a - Air Quality Notice of Construction Permit.pdf

375

Structure and magnetic properties of the Al{sub 1-x}Ga{sub x}FeO{sub 3} family of oxides: A combined experimental and theoretical study  

Science Conference Proceedings (OSTI)

Magnetic properties of the Al{sub 1-x}Ga{sub x}FeO{sub 3} family of oxides crystallizing in a non-centrosymmetric space group have been investigated in detail along with structural aspects by employing X-ray and neutron diffraction, Moessbauer spectroscopy and other techniques. The study has revealed the occurrence of several interesting features related to unit cell parameters, site disorder and ionic size. Using first-principles density functional theory based calculations, we have attempted to understand how magnetic ordering and related properties in these oxides depend sensitively on disorder at the cation site. The origin and tendency of cations to disorder and the associated properties are traced to the local structure and ionic sizes. -- Graphical abstract: We have studied both experimentally and theoretically the important role of disorder at the cation site on magnetic and related properties of the Al{sub 1-x}Ga{sub x}FeO{sub 3} family of oxides crystallizing in a non-centrosymmetric space group. Display Omitted Research highlights: {yields} Interesting observations on cation site disorder, cell parameters and ionic size. {yields} Cation site disorder explains magnetic ordering. {yields} Demonstrates the importance of the A-site cations.

Saha, Rana; Shireen, Ajmala [Chemistry and Physics of Materials Unit, New Chemistry Unit, Theoretical Science Unit and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560 064 (India); Bera, A.K. [Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India); Shirodkar, Sharmila N.; Sundarayya, Y.; Kalarikkal, Nandakumar [Chemistry and Physics of Materials Unit, New Chemistry Unit, Theoretical Science Unit and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560 064 (India); Yusuf, S.M. [Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India); Waghmare, Umesh V. [Chemistry and Physics of Materials Unit, New Chemistry Unit, Theoretical Science Unit and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560 064 (India); Sundaresan, A., E-mail: sundaresan@jncasr.ac.i [Chemistry and Physics of Materials Unit, New Chemistry Unit, Theoretical Science Unit and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560 064 (India); Rao, C.N.R, E-mail: cnrrao@jncasr.ac.i [Chemistry and Physics of Materials Unit, New Chemistry Unit, Theoretical Science Unit and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560 064 (India)

2011-03-15T23:59:59.000Z

376

A InGaN/GaN quantum dot green ({lambda}=524 nm) laser  

SciTech Connect

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab [Department of Electrical Engineering and Computer Science, Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2011-05-30T23:59:59.000Z

377

GRR/Section 9-WA-b - State Environmental Review | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 9-WA-b - State Environmental Review GRR/Section 9-WA-b - State Environmental Review < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 9-WA-b - State Environmental Review 9-WA-b - State Environmental Review.pdf Click to View Fullscreen Triggers None specified Once the lead agency is determined they are responsible for continuing forward with environmental review. In Washington, environmental review is effectuated through the developer completing an Environmental Checklist which assists the lead agency in determining whether the proposal will likely result in negative impacts on the environment. 9-WA-b - State Environmental Review.pdf 9-WA-b - State Environmental Review.pdf Error creating thumbnail: Page number not in range.

378

Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interface Self-cleaning by Atomic Layer Deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As  

SciTech Connect

The Synchrotron Radiation Photoemission Spectroscopic (SRPES) study was conducted to (a) investigate the surface chemistry of In{sub 0.53}Ga{sub 0.47}As and In{sub 0.52}Al{sub 0.48}As post chemical and thermal treatments, (b) construct band diagram and (c) investigate the interface property of HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As and HfO{sub 2}/In{sub 0.52}Al{sub 0.48}As. Dilute HCl and HF etch remove native oxides on In{sub 0.53}Ga{sub 0.47}As and In{sub 0.52}Al{sub 0.47}As, whereas in-situ vacuum annealing removes surface arsenic pile-up. After the atomic layer deposition of HfO{sub 2}, native oxides were considerably reduced compared to that in as-received epi-layers, strongly suggesting the self-clean mechanism. Valence and conduction band offsets are measured to be 3.37 {+-} 0.1eV, 1.80 {+-} 0.3eV for In{sub 0.53}Ga{sub 0.47}As and 3.00 {+-} 0.1eV, 1.47 {+-} 0.3eV for In{sub 0.52}Al{sub 0.47}As, respectively.

Kobayashi, Masaharu; /SLAC, SSRL; Chen, P.T.; Sun, Y.; Goel, N.; Majhi, P.; Garner, M; Tsai, W.; Pianetta, P.; Nishi, Y.; /SLAC, SSRL

2008-10-31T23:59:59.000Z

379

Synthesis and structural characterization of the ternary Zintl phases AE{sub 3}Al{sub 2}Pn{sub 4} and AE{sub 3}Ga{sub 2}Pn{sub 4} (AE=Ca, Sr, Ba, Eu; Pn=P, As)  

Science Conference Proceedings (OSTI)

Ten new ternary phosphides and arsenides with empirical formulae AE{sub 3}Al{sub 2}Pn{sub 4} and AE{sub 3}Ga{sub 2}Pn{sub 4} (AE=Ca, Sr, Ba, Eu; Pn=P, As) have been synthesized using molten Ga, Al, and Pb fluxes. They have been structurally characterized by single-crystal and powder X-ray diffraction to form with two different structures-Ca{sub 3}Al{sub 2}P{sub 4}, Sr{sub 3}Al{sub 2}As{sub 4}, Eu{sub 3}Al{sub 2}P{sub 4}, Eu{sub 3}Al{sub 2}As{sub 4}, Ca{sub 3}Ga{sub 2}P{sub 4}, Sr{sub 3}Ga{sub 2}P{sub 4}, Sr{sub 3}Ga{sub 2}As{sub 4}, and Eu{sub 3}Ga{sub 2}As{sub 4} crystallize with the Ca{sub 3}Al{sub 2}As{sub 4} structure type (space group C2/c, Z=4); Ba{sub 3}Al{sub 2}P{sub 4} and Ba{sub 3}Al{sub 2}As{sub 4} adopt the Na{sub 3}Fe{sub 2}S{sub 4} structure type (space group Pnma, Z=4). The polyanions in both structures are made up of TrPn{sub 4} tetrahedra, which share common corners and edges to form {sup 2}{sub {infinity}}[TrPn{sub 2}]{sub 3-} layers in the phases with the Ca{sub 3}Al{sub 2}As{sub 4} structure, and {sup 1}{sub {infinity}}[TrPn{sub 2}]{sub 3-} chains in Ba{sub 3}Al{sub 2}P{sub 4} and Ba{sub 3}Al{sub 2}As{sub 4} with the Na{sub 3}Fe{sub 2}S{sub 4} structure type. The valence electron count for all of these compounds follows the Zintl-Klemm rules. Electronic band structure calculations confirm them to be semiconductors. - Graphical abstract: AE{sub 3}Al{sub 2}Pn{sub 4} and AE{sub 3}Ga{sub 2}Pn{sub 4} (AE=Ca, Sr, Ba, Eu; Pn=P, As) crystallize in two different structures-Ca{sub 3}Al{sub 2}P{sub 4}, Sr{sub 3}Al{sub 2}As{sub 4}, Eu{sub 3}Al{sub 2}P{sub 4}, Eu{sub 3}Al{sub 2}As{sub 4}, Ca{sub 3}Ga{sub 2}P{sub 4}, Sr{sub 3}Ga{sub 2}P{sub 4}, Sr{sub 3}Ga{sub 2}As{sub 4}, and Eu{sub 3}Ga{sub 2}As{sub 4}, are isotypic with the previously reported Ca{sub 3}Al{sub 2}As{sub 4} (space group C2/c (No. 15)), while Ba{sub 3}Al{sub 2}P{sub 4} and Ba{sub 3}Al{sub 2}As{sub 4} adopt a different structure known for Na{sub 3}Fe{sub 2}S{sub 4} (space group Pnma (No. 62). The polyanions in both structures are made up of TrPn{sub 4} tetrahedra, which by sharing common corners and edges, form {sup 2}{sub {infinity}}[TrPn{sub 2}]{sub 3-}layers in the former and {sup 1}{sub {infinity}}[TrPn{sub 2}]{sub 3-} chains in Ba{sub 3}Al{sub 2}P{sub 4} and Ba{sub 3}Al{sub 2}As{sub 4}. Highlights: Black-Right-Pointing-Pointer AE{sub 3}Ga{sub 2}Pn{sub 4} (AE=Ca, Sr, Ba, Eu; Pn=P, As) are new ternary pnictides. Black-Right-Pointing-Pointer Ba{sub 3}Al{sub 2}P{sub 4} and Ba{sub 3}Al{sub 2}As{sub 4} adopt the Na{sub 3}Fe{sub 2}S{sub 4} structure type. Black-Right-Pointing-Pointer The Sr- and Ca-compounds crystallize with the Ca{sub 3}Al{sub 2}As{sub 4} structure type. Black-Right-Pointing-Pointer The valence electron count for all title compounds follows the Zintl-Klemm rules.

He, Hua; Tyson, Chauntae; Saito, Maia [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716 (United States); Bobev, Svilen, E-mail: bobev@udel.edu [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716 (United States)

2012-04-15T23:59:59.000Z

380

GRR/Section 12-WA-a - Live Wildlife Taking Permit | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 12-WA-a - Live Wildlife Taking Permit GRR/Section 12-WA-a - Live Wildlife Taking Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 12-WA-a - Live Wildlife Taking Permit 12-WA-a - Live Wildlife Taking Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Fish and Wildlife Regulations & Policies WAC 232-12-064 Triggers None specified In Washington, it is unlawful to take wildlife from the wild without permission from the Washington State Department of Fish and Wildlife (WDFW). The WDFW issues Live Wildlife Taking Permits under WAC 232-12-064. 12-WA-a - Live Wildlife Taking Permit.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range.

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381

Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) | Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) June 12, 2013 DOE referred the matter of Fisher & Paykel Appliances residential clothes washer, model WA42T26GW1, to the U.S. Environmental Protection Agency, brand manager for the ENERGY STAR Program, for appropriate action after DOE testing showed that the model does not meet the ENERGY STAR specification. Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) More Documents & Publications Regulatory Burden RFI DOE response to questions from AHAM on the supplemental proposed test procedure for residential clothes washers Scoping Study to Evaluate Feasibility of National Databases for EM&V Documents and Measure Savings: Appendices

382

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX SUMMARY This EIS evaluates the environmental impacts of a proposal to provide financial assistance for a project proposed by NRG Energy, Inc (NRG). DOE selected NRG's proposed W.A. Parish Post-Combustion CO2 Capture and Sequestration Project for a financial assistance award through a competitive process under the Clean Coal Power Initiative Program. NRG would design, construct and operate a commercial-scale carbon dioxide (CO2) capture facility at its existing W.A. Parish Generating Station in Fort Bend County, Texas; deliver the CO2 via a new pipeline to the existing West Ranch oil field in Jackson

383

GRR/Section 3-WA-b - Land Access Overview | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-b - Land Access Overview GRR/Section 3-WA-b - Land Access Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-b - Land Access Overview 3-WA-b - Land Access Overview.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Triggers None specified Any developer that needs access to or through state lands must obtain the appropriate permit or lease. The developer will obtain such permit or lease through the Washington State Department of Natural Resources. 3-WA-b - Land Access Overview.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative

384

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

73: W.A. Parish Post-Combustion CO2 Capture and Sequestration 73: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX SUMMARY This EIS evaluates the environmental impacts of a proposal to provide financial assistance for a project proposed by NRG Energy, Inc (NRG). DOE selected NRG's proposed W.A. Parish Post-Combustion CO2 Capture and Sequestration Project for a financial assistance award through a competitive process under the Clean Coal Power Initiative Program. NRG would design, construct and operate a commercial-scale carbon dioxide (CO2) capture facility at its existing W.A. Parish Generating Station in Fort Bend County, Texas; deliver the CO2 via a new pipeline to the existing West Ranch oil field in Jackson

385

HH8, Characterization of Thin InAlP Native Oxide Gate Dielectric ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

386

Microbial community changes during sustained Cr(VI) reduction at the 100H site in Hanford, WA  

E-Print Network (OSTI)

at the 100H site in Hanford, WA Romy Chakraborty 1 , Eoin Lcontaminated aquifer at the Hanford (WA) 100H site in 2004.Cr(VI) reduction at Hanford, and a comparison of the

Chakraborty, Romy

2010-01-01T23:59:59.000Z

387

BB2, Novel Cs-Free GaN Photocathodes  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

388

Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated Circuits  

Science Conference Proceedings (OSTI)

A new (AlGa)As/GaAs MODFET integrated circuit simulator is described. Our simulator is a customized version of SPICE incorporating the extended charge control model for MODFET's and the velocity saturation model for ungated FET's used as the load devices. ...

Choong H. Hyun; M. S. Shur; N. C. Cirillo

2006-11-01T23:59:59.000Z

389

EIS-0467: Hanford Site Natural Gas Pipeline, Richland, WA | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7: Hanford Site Natural Gas Pipeline, Richland, WA 7: Hanford Site Natural Gas Pipeline, Richland, WA EIS-0467: Hanford Site Natural Gas Pipeline, Richland, WA Summary This EIS will evaluate the environmental impacts of a proposal to enter into a contract with a licensed natural gas supplier in Washington State to construct, operate, and maintain a natural gas pipeline. The pipeline would deliver natural gas to support the Waste Treatment Plant and the 242-A Evaporator operations in the 200 East Area of the Hanford Site. Public Comment Opportunities None available at this time. For more information, contact: Mr. Douglas Chapin, NEPA Document Manager U.S. Department of Energy Richland Operations Office P.O. Box 550, MSIN A5-11 Richland, WA 99352 Documents Available for Download January 23, 2012 EIS-0467: Notice of Intent to Prepare an Environmental Impact Statement and

390

GRR/Section 9-WA-c - State Environmental Impact Statement | Open Energy  

Open Energy Info (EERE)

GRR/Section 9-WA-c - State Environmental Impact Statement GRR/Section 9-WA-c - State Environmental Impact Statement < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 9-WA-c - State Environmental Impact Statement 9-WA-c - State Environmental Impact Statement.pdf Click to View Fullscreen Triggers None specified The primary purpose of an Environmental Impact Statement (EIS) is to ensure that the Washington State Environmental Policy Act (SEPA) policies are an integral part of the ongoing programs and actions of state and local government. An EIS must provide impartial discussion of significant environmental impacts and must inform decision makers and the public of reasonable alternatives, including mitigation measures that would avoid or minimize adverse impacts or enhance environmental quality. WAC 197-11-400.

391

GRR/Section 19-WA-f - Water Well NOI for Replacement or Additional Wells |  

Open Energy Info (EERE)

GRR/Section 19-WA-f - Water Well NOI for Replacement or Additional Wells GRR/Section 19-WA-f - Water Well NOI for Replacement or Additional Wells < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-f - Water Well NOI for Replacement or Additional Wells 19-WA-f - Water Well NOI for Replacement or Additional Wells.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington 90.44.100 Revised Code of Washington 18.104.048 Washington Administrative Code 173-160-151 Triggers None specified A developer seeking to use ground water for an activity may need to drill a new well in a different location than a previous well, drill an additional well at an existing location, or drill a replacement well at the same

392

GRR/Section 11-WA-a - State Cultural Considerations Overview | Open Energy  

Open Energy Info (EERE)

GRR/Section 11-WA-a - State Cultural Considerations Overview GRR/Section 11-WA-a - State Cultural Considerations Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-WA-a - State Cultural Considerations Overview 11-WA-a - State Cultural Considerations Overview.pdf Click to View Fullscreen Triggers None specified The developer will be required to comply with Washington state law when human remains or other cultural resources are discovered on a project site. Cultural resources include both historic and archaeological resources and sites. The discovery of cultural resources may require obtaining a permit and providing public notice and notice to Indian Tribes. Once the necessary procedures have been followed, the developer may continue with the project.

393

GRR/Section 18-WA-a - Underground Storage Tank Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 18-WA-a - Underground Storage Tank Process GRR/Section 18-WA-a - Underground Storage Tank Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 18-WA-a - Underground Storage Tank Process 18-WA-a - Underground Storage Tank Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.76 Washington Administrative Code Chapter 173-360 Triggers None specified Washington has a federally-approved state Underground Storage Tank (UST) program regulated by the Washington State Department of Ecology (WSDE) under Revised Code of Washington Chapter 90.76 and Washington Administrative Code Chapter 173-360. Washington defines an "Underground

394

GRR/Section 5-WA-a - Drilling and Well Development | Open Energy  

Open Energy Info (EERE)

GRR/Section 5-WA-a - Drilling and Well Development GRR/Section 5-WA-a - Drilling and Well Development < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 5-WA-a - Drilling and Well Development 5-WA-a.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies Geothermal Act 78.60 RCW Geothermal Rules 332-17 WAC Triggers None specified In Washington geothermal drilling and well development are regulated by the Washington State Department of Natural Resources (WSDNR). Geothermal production wells and core holes deeper than 750ft require the developer go through the whole WSDNR permitting process (which requires a public hearing) and require that the developer complete the State Environmental

395

GRR/Section 3-WA-e - State Right of Way Process | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-e - State Right of Way Process GRR/Section 3-WA-e - State Right of Way Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-e - State Right of Way Process 3-WA-e - State Right of Way Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies RCW 79-36-350 RCW 79-36-520 RCW 79-36-530 Triggers None specified This flowchart illustrates the process for obtaining a right of way over state lands in Washington. The right of way process is overseen by the Washington State Department of Natural Resources (WSDNR). The right of way process is regulated under Revised Code of Washington (RCW) 79-36-350. The developer may apply for an easement, permit or license for a right of

396

GRR/Section 14-WA-d - Section 401 Water Quality Certification | Open Energy  

Open Energy Info (EERE)

GRR/Section 14-WA-d - Section 401 Water Quality Certification GRR/Section 14-WA-d - Section 401 Water Quality Certification < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-WA-d - Section 401 Water Quality Certification 14-WA-d - 401 Water Quality Certification.pdf Click to View Fullscreen Contact Agencies U S Army Corps of Engineers Washington State Department of Ecology Regulations & Policies Revised Statute of Washington Chapter 90.48 Washington Administrative Code Chapter 173-201A Washington Administrative Code 173-225-030 Triggers None specified Developers requiring a Section 404 Dredge and Fill Permit from the U S Army Corps of Engineers (Corps) are required to obtain a Section 401 Water Quality Certification from the state of Washington. The Washington State

397

GRR/Section 19-WA-d - Water Conservancy Board Transfer or Change of Water  

Open Energy Info (EERE)

19-WA-d - Water Conservancy Board Transfer or Change of Water 19-WA-d - Water Conservancy Board Transfer or Change of Water Right < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-d - Water Conservancy Board Transfer or Change of Water Right 19-WA-d - Water Conservancy Board Transfer or Change of Water Right.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.80 RCW 90.03.380 90.03.390 RCW 90.44.100 Triggers None specified In 1997, the Washington Legislature authorized the creation of water conservancy boards through the enactment of Revised Code of Washington Chapter 90.80 to expedite the administrative process for voluntary water right transfers within individual counties. In counties where a water

398

GRR/Section 19-WA-e - Water Well Notice of Intent for New Well | Open  

Open Energy Info (EERE)

GRR/Section 19-WA-e - Water Well Notice of Intent for New Well GRR/Section 19-WA-e - Water Well Notice of Intent for New Well < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-e - Water Well Notice of Intent for New Well 19-WA-e - Water Well Notice of Intent for New Well.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington 18.104.048 Washington Administrative Code 173-160-151 Triggers None specified A developer seeking to use ground water for an activity may need to drill a new well to access the ground water. When a developer needs to drill a new well, the developer must complete the Notice of Intent (NOI) to Drill a Well form and submit the form to the Washington State Department of Ecology

399

GRR/Section 14-WA-b - State NPDES Permitting Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 14-WA-b - State NPDES Permitting Process GRR/Section 14-WA-b - State NPDES Permitting Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-WA-b - State NPDES Permitting Process 14-WA-b - State NPDES Permitting Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology United States Environmental Protection Agency Regulations & Policies Clean Water Act Chapter 90.48 RCW Chapter 173-216 WAC Triggers None specified Section 402 of the Clean Water Act (CWA) required the Environmental Protection Agency (EPA) to establish the National Pollutant Discharge Elimination System (NPDES) to regulate discharge of pollutants from point sources. In Washington, the EPA has delegated responsibility of NPDES to

400

GRR/Section 4-WA-a - State Exploration Process | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 4-WA-a - State Exploration Process GRR/Section 4-WA-a - State Exploration Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 4-WA-a - State Exploration Process 4-WA-a State Exploration Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies Geothermal Act 78.60 RCW Geothermal Rules 332-17 WAC Triggers None specified Geothermal exploration in Washington requires a Geothermal Exploration Permit from the Washington State Department of Natural Resources (WSDNR) for invasive exploration or drilling. Operations that require an exploration or drilling permit will also require the developer to initiate the State Environmental Policy Act (SEPA). In Washington geothermal resources are regulated under Chapter 78.60 RCW

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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401

GRR/Section 3-WA-d - State Land Lease | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-d - State Land Lease GRR/Section 3-WA-d - State Land Lease < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-d - State Land Lease 3-WA-d - State Land Lease.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies RCW 79-13-020 RCW 79-13-140 RCW 79-13-150 WAC 332-22-030 WAC 332-22-105 WAC 332-22-110 Triggers None specified This flowchart illustrates the process used to lease state lands in Washington. The Washington State Department of Natural Resources (WSDNR) oversees the land leasing process through the Commissioner of Public Lands ("commissioner"). The WSDNR may lease state lands for purposes it deems advisable, including commercial, industrial, residential, agricultural, and

402

GRR/Section 3-WA-c - Utility Franchise or Permit Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 3-WA-c - Utility Franchise or Permit Process GRR/Section 3-WA-c - Utility Franchise or Permit Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-c - Utility Franchise or Permit Process 3-WA-c - Utility Franchise or Permit Process (1).pdf Click to View Fullscreen Contact Agencies Washington State Department of Transportation Regulations & Policies WAC 468-34-060 WAC 468-34-080 WAC 468-34-110 WAC 468-34-160 WAC 468-34-170 Triggers None specified This flowchart illustrates the process of obtaining a franchise or permit through a state highway right of way in Washington State. A utility permit or franchise is required for occupancy of a highway right of way by utility facilities, including private lines. WAC 468-34-160. The process is

403

GRR/Section 19-WA-b - New Water Right Permit Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 19-WA-b - New Water Right Permit Process GRR/Section 19-WA-b - New Water Right Permit Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-b - New Water Right Permit Process 19-WA-b - New Water Right Permit Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.03 Revised Code of Washington Chapter 90.44 Triggers None specified Washington uses a prior appropriation system for the distribution of both surface water and ground water rights in which water users receive the right to use water on a "first in time, first in right" basis. Under Washington law, the waters of Washington belong collectively to the public

404

GRR/Section 19-WA-c - Transfer or Change of Water Right | Open Energy  

Open Energy Info (EERE)

9-WA-c - Transfer or Change of Water Right 9-WA-c - Transfer or Change of Water Right < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-c - Transfer or Change of Water Right 19-WA-c - Transfer or Change of Water Right.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington 90.03.380 Revised Code of Washington 90.44.100 Revised Code of Washington Chapter 90.80 Triggers None specified Much of Washington's public waters have been accounted for through water right claims, permits, or certificates. As a result, many individuals seeking water rights try to acquire existing water rights already in use or change the use of a current water right they already hold. Certain elements

405

GRR/Section 3-WA-a - State Geothermal Lease | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-a - State Geothermal Lease GRR/Section 3-WA-a - State Geothermal Lease < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-a - State Geothermal Lease 3-WA-a State Geothermal Lease.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies Chapter 79.14 RCW Chapter 344-12 WAC Triggers None specified The State of Washington is still in the process of developing and finalizing the rules and regulations related to geothermal leases on state lands; however, the Washington State Department of Natural Resources (WSDNR) expects the process to be similar to the process for leasing state lands for oil and natural gas development. The rules and regulations for

406

GRR/Section 11-WA-c - Archaeological Resource Discovery Process | Open  

Open Energy Info (EERE)

GRR/Section 11-WA-c - Archaeological Resource Discovery Process GRR/Section 11-WA-c - Archaeological Resource Discovery Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-WA-c - Archaeological Resource Discovery Process 11-WA-c - Archaeological Resource Discovery Process.pdf Click to View Fullscreen Triggers None specified In the state of Washington, cultural resource concerns are integrated as early as possible into the planning for capital projects and are protected if discovered during construction. Washington defines "Cultural resources" as archeological and historical sites and artifacts, and traditional areas or items of religious, ceremonial and social uses to affected tribes. Washington defines an "Archaeological resource" as any

407

Advance Patent Waiver W(A)2012-005 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5 Advance Patent Waiver W(A)2012-005 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

408

Advance Patent Waiver W(A)2012-013 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

13 Advance Patent Waiver W(A)2012-013 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

409

Advance Patent Waiver W(A)2012-018 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8 Advance Patent Waiver W(A)2012-018 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

410

Advance Patent Waiver W(A)2012-031 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1 Advance Patent Waiver W(A)2012-031 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

411

Advance Patent Waiver W(A)2012-004 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

04 Advance Patent Waiver W(A)2012-004 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

412

Advance Patent Waiver W(A)2012-002 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2 Advance Patent Waiver W(A)2012-002 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

413

Advance Patent Waiver W(A)2012-033 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3 Advance Patent Waiver W(A)2012-033 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

414

Advance Patent Waiver W(A)2012-029 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9 Advance Patent Waiver W(A)2012-029 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

415

Advance Patent Waiver W(A)2012-030 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

30 Advance Patent Waiver W(A)2012-030 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

416

Advance Patent Waiver W(A)2012-016 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6 Advance Patent Waiver W(A)2012-016 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

417

Advance Patent Waiver W(A)2012-019 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9 Advance Patent Waiver W(A)2012-019 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

418

Advance Patent Waiver W(A)2012-032 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

32 Advance Patent Waiver W(A)2012-032 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

419

Advance Patent Waiver W(A)2012-007 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

07 Advance Patent Waiver W(A)2012-007 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

420

WA_1994_004_ALUMINUM_COMPANY_OF_AMERICA_Waiver_of_Domestic_a...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MPANYOFAMERICAWaiverofDomestica.pdf More Documents & Publications WA1993034CONSOLIDATEDNATURALGAS(CNG)WaiverofDomesti.pdf ClassWaiverWC-2000-004.pdf DOE M 483.1-1...

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

GRR/Section 19-WA-d - Water Conservancy Board Transfer or Change...  

Open Energy Info (EERE)

19-WA-d - Water Conservancy Board Transfer or Change of Water Right < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of...

422

Advance Patent Waiver W(A)2009-069 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

09-069 Advance Patent Waiver W(A)2009-069 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to...

423

Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1)  

Energy.gov (U.S. Department of Energy (DOE))

DOE referred the matter of Fisher & Paykel Appliances residential clothes washer, model WA42T26GW1, to the EPA for appropriate action after DOE testing showed that the model does not meet the ENERGY STAR specification.

424

GRR/Section 14-WA-c - Underground Injection Control Permit | Open Energy  

Open Energy Info (EERE)

GRR/Section 14-WA-c - Underground Injection Control Permit GRR/Section 14-WA-c - Underground Injection Control Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-WA-c - Underground Injection Control Permit 14-WA-c - Underground Injection Control Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Chapter 173-218 WAC Non-endangerment Standard Triggers None specified The Safe Drinking Water Act requires Washington to implement technical criteria and standards to protect underground sources of drinking water from contamination. Under Chapter 173-218 WAC, the Washington State Department of Ecology (WSDE) regulates and permits underground injection control (UIC) wells in Washington. The Environmental Protection Agency

425

GRR/Section 19-WA-a - Water Access and Water Rights Overview | Open Energy  

Open Energy Info (EERE)

9-WA-a - Water Access and Water Rights Overview 9-WA-a - Water Access and Water Rights Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-a - Water Access and Water Rights Overview 19-WA-a - Water Access and Water Rights Overview.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.03 Revised Code of Washington Chapter 90.44 RCW 90.44.050 Triggers None specified Similar to many western states, only a small amount of water is available for appropriation in Washington. As a result, Washington has developed a comprehensive regulatory scheme for the distribution of water rights and use of water in the state. Washington employs a prior appropriation or

426

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

427

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells  

E-Print Network (OSTI)

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells H. C. Chui, S. M. Lord report the first observation of intersubband transitions in In,Ga, -#s(y=O.3,0.5)/ AlGaAs quantum wells. These quantum wells were grown on a GaAs substrate with a linearly graded InGaAs buffer to achieve strain

Fejer, Martin M.

428

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

DOE Green Energy (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

429

, 2004, 46, . 1 GaAs/AlGaAs  

E-Print Network (OSTI)

, S. Rumyantsev, J.-Q. L¨u, M.S. Shur, C.A. Saylor, L.C. Brunel. Appl. Phys. Lett. 80, 18, 3433 (2002. L¨u, R. Gaska, M.S. Shur, F. Simin, X. Hu, M. Asif Khan, C.A. Saylor, L.C. Brunel. J. Appl. Phys. 91, , N. Dyakonova , E. Kaminska , A. Piotrowska , K. Golaszewska , M.S. Shur , 603950 , GES

Levelut, Claire

430

Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells  

Science Conference Proceedings (OSTI)

In this article, Ga-doped Al-zinc-oxide (GAZO)/titanium-doped indium-tin-oxide (ITIO) bi-layer films were deposited onto glass substrates by direct current (dc) magnetron sputtering. The bottom ITIO film, with a thickness of 200 nm, was sputtered onto the glass substrate. The ITIO film was post-annealed at 350 deg. C for 10-120 min as a seed layer. The effect of post-annealing conditions on the morphologies, electrical, and optical properties of ITIO films was investigated. A GAZO layer with a thickness of 1200 nm was continuously sputtered onto the ITIO bottom layer. The results show that the properties of the GAZO/ITIO films were strongly dependent on the post-annealed conditions. The spectral haze (T{sub diffuse}/T{sub total}) of the GAZO/ITIO bi-layer films increases upon increasing the post-annealing time. The haze and resistivity of the GAZO/ITIO bi-layer films were improved with the post-annealed process. After optimizing the deposition and annealing parameters, the GAZO/ITIO bi-layer film has an average transmittance of 83.20% at the 400-800 nm wavelengths, a maximum haze of 16%, and the lowest resistivity of 1.04 x 10{sup -3}{Omega} cm. Finally, the GAZO/ITIO bi-layer films, as a front electrode for silicon-based thin film solar cells, obtained a maximum efficiency of 7.10%. These encouraging experimental results have potential applications in GAZO/ITIO bi-layer film deposition by in-line sputtering without the wet-etching process and enable the production of highly efficient, low-cost thin film solar cells.

Wang, Chao-Chun; Wuu, Dong-Sing; Lin, Yang-Shih; Lien, Shui-Yang; Huang, Yung-Chuan; Liu, Chueh-Yang; Chen, Chia-Fu; Nautiyal, Asheesh; Lee, Shuo-Jen [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Department of Materials Science and Engineering, MingDao University, Changhua 52345, Taiwan (China); Department of Mechanical Engineering, Yuan Ze University, Taoyuan 320, Taiwan (China)

2011-11-15T23:59:59.000Z

431

Ballard Library and Neighborhood Service Center - Seattle, WA by Bohlin Cywinski Jackson Architects [EDRA/Places Awards 2008 -- Design  

E-Print Network (OSTI)

Bohlin Cywinski Jackson Architects / Ballard Library 2008WA Bohlin Cywinski Jackson Architects Seattle residents loveService Center, the architects, Bohlin Cywinski Jackson,

Merlino, Kathryn Rogers

2008-01-01T23:59:59.000Z

432

China Ga Air Compressor, China Ga Air Compressor Products ...  

U.S. Energy Information Administration (EIA)

China Ga Air Compressor, China Ga Air Compressor Suppliers and Manufacturers Directory - Source a Large Selection of Ga Air Compressor Products at ...

433

GRR/Section 15-WA-b - Air Operating Permit | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » GRR/Section 15-WA-b - Air Operating Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 15-WA-b - Air Operating Permit 15-WA-b - Air Operating Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies WAC 173-401-500 WAC 173-401-800 WAC 173-401-810 WAC 173-401-735 WAC 173-401-610 Triggers None specified This flowchart illustrates the process for obtaining an Air Operating Permit in Washington State. The Washington State Department of Ecology (WSDE) issues Air Operating Permit under WAC 173-401. An Air Operating Permit is required if a facility has the potential to emit

434

GRR/Section 7-WA-a - Energy Facility Siting Process | Open Energy  

Open Energy Info (EERE)

form form View source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon » GRR/Section 7-WA-a - Energy Facility Siting Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 7-WA-a - Energy Facility Siting Process 7-WA-a - Energy Facility Siting Process (1).pdf Click to View Fullscreen Contact Agencies Washington State Energy Facility Site Evaluation Council Regulations & Policies RCW 80.50.60(1) WAC 463-60 RCW 80.50.090(2) WAC 463-30-270 WAC 463-30-320 Triggers None specified Under RCW 80.50.60(1) a developer may not begin construction of a new energy facility site until they obtain Energy Facility Siting certification

435

GRR/Section 11-WA-b - Human Remains Process | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » GRR/Section 11-WA-b - Human Remains Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-WA-b - Human Remains Process 11-WA-b - Human Remains Process (1).pdf Click to View Fullscreen Triggers None specified This flowchart illustrates the necessary procedure when a developer discovers human remains on a project site. In Washington, every person has the duty to notify the coroner upon the discovery of any human remains in the most expeditious manner possible. The Washington Department of Archaeology and Historic Preservation (DAHP) handles the disposition of non-forensic remains, while the county coroner handles the disposition of

436

EA-1949: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA | Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

49: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA 49: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA EA-1949: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA SUMMARY This EA analyzes the potential environmental effects of a proposal by the Public Utility District No. 1 of Snowhomish County, Washington to construct and operate the Admiralty Inlet Tidal Project. The proposed 680-kilowatt project would be located on the east side of Admiralty Inlet in Puget Sound, Washington, about 1 kilometer west of Whidbey Island, entirely within Island County, Washington. The Federal Energy Regulatory Commission (FERC) is the lead agency. DOE is a cooperating agency. PUBLIC COMMENT OPPORTUNITIES None available at this time. DOCUMENTS AVAILABLE FOR DOWNLOAD August 9, 2013 EA-1949: FERC Notice of Availability Errata Sheet

437

GRR/Section 9-WA-a - State Environmental Overview | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » GRR/Section 9-WA-a - State Environmental Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 9-WA-a - State Environmental Overview 9-WA-a - State Environmental Overview.pdf Click to View Fullscreen Triggers None specified The Washington State Environmental Policy Act (SEPA), chapter 43.21 RCW, requires all governmental agencies to consider the environmental impacts of a proposal before making decisions. Washington uses an Environmental Checklist and Environmental Review (ER) to provide information to help government agencies identify impacts from their proposals and determine whether an Environmental Impact Statement (EIS) is necessary.

438

MEMORANDUM : APPROVAL TO MODIFY ADVANCE WAIVER OF PATENT RIGHTS W(A)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

: APPROVAL TO MODIFY ADVANCE WAIVER OF PATENT RIGHTS W(A) : APPROVAL TO MODIFY ADVANCE WAIVER OF PATENT RIGHTS W(A) 2009-047 GRANTED FOR US SOLAR HOLDINGS LLC UNDER AGREEMENT NO. DE-FC36-08G018 155 US Solar Holdings LLC ("US Solar") has requested that the Department of Energy ("DOE") modify or clarify the cost share requirements set forth in the statement of considerations for the granted advance patent waiver W(A) 2009-047. Specifically, the statement of considerations, as originally granted, states the following: The total cost of the award is approximately $4 million with the Petitioner providing about 50% cost sharing. This waiver is contingent upon the Petitioner maintaining, in aggregate, the above cost sharing percentage over the course of the agreement. Rather than just provide an aggregate cost share requirement of 50% for the agreement, US Solar

439

InGaAs and Ge MOSFETs with high ? dielectrics  

Science Conference Proceedings (OSTI)

InGaAs and Ge MOSFETs with high @k's are now the leading candidates for technology beyond the 15nm node CMOS. The UHV-Al"2O"3/Ga"2O"3(Gd"2O"3) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities ... Keywords: Atomic layer deposition, Germanium, High ? dielectrics, III-V Compound semiconductor, MOSFETs, Molecular beam epitaxy

W. C. Lee; P. Chang; T. D. Lin; L. K. Chu; H. C. Chiu; J. Kwo; M. Hong

2011-04-01T23:59:59.000Z

440

X=Bi, Sb, Al, Ga  

Science Conference Proceedings (OSTI)

... Nd-Fe-B Permanent Magnets Unique Exchange Bias Induced by Antiferromagnetic Cr-oxide ZnO-graphene Hybrid Quantum Dots Light Emitting Diode...

Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs  

E-Print Network (OSTI)

The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate ...

Piner, Edwin L.

442

GRR/Section 18-WA-b - Dangerous Waste Permit | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 18-WA-b - Dangerous Waste Permit GRR/Section 18-WA-b - Dangerous Waste Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 18-WA-b - Dangerous Waste Permit 18-WA-b - Dangerous Waste Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies WAC 173-303-020 WAC 173-303-060 WAC 173-303-070 WAC 173-303-071 WAC 173-303-072 WAC 173-303-081 WAC 173-303-082 WAC 173-303-090 WAC 173-303-100 WAC 173-303-110 WAC 173-303-140 WAC 173-303-220 WAC 173-303-281 WAC 173-303-282 WAC 173-303-803 WAC 173-303-845 Triggers None specified The Washington State Department of Ecology (WSDE) oversees the permitting process for dangerous and solid waste. In Washington, a developer must obtain a permit if they handle dangerous waste and solid waste and are

443

W(A)-02-009, CONSOL ENERGY, INC. CLOSED PER INSTRUCTIONS FROM  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

-02-009, CONSOL ENERGY, INC. CLOSED PER INSTRUCTIONS FROM MIKE HOFFMAN ON 8262003. SEE W(A)-02-053. JPN 08 2002 07:00 FR IPL DOE CH 630 252 2779 TO AGCP-HQ P.1010 * * Hi Katie,...

444

Qi-Wa, a problem that has plagued Chinese scrolls for millenniums  

E-Print Network (OSTI)

Qi-Wa refers to the up curl on the lengths of handscrolls and hanging scrolls, which has troubled Chinese artisans and emperors for as long as the art of painting and calligraphy exists. This warp is unwelcomed not only for aesthetic reasons, but its potential damage to the fiber and ink. Although it is generally treated as a part of the cockling and curling due to climate, mounting procedures, and conservation conditions, we emphasize that the intrinsic curvature incurred from the storage is in fact the main cause of Qi-Wa. The Qi-Wa height is determined by experiments to obey scaling relations with the length, width, curvature, and thickness of the scroll, which are supported by Molecular Dynamics Simulation and theoretic derivations. This understanding helps us come up with plausible remedies to mitigate Qi-Wa. All proposals are tested on real mounted paper and in simulations. Due to the general nature of this warp, we believe the lessons learnt from studying ancient Chinese scrolls can be applied to moder...

Chou, Ming-Han; Wang, Yi-Ping; Hong, Sun-Hsin; Hong, Tzay-Ming

2013-01-01T23:59:59.000Z

445

In situ atomic layer deposition and synchrotron-radiation photoemission study of Al2O3 on pristine n-GaAs(0 0 1)-46 surface  

Science Conference Proceedings (OSTI)

This work presents the in situ reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM) and synchrotron-radiation photoemission studies for the morphological and interfacial chemical characterization of in situ atomic ... Keywords: Atomic layer deposition, GaAs, Molecular beam epitaxy, Synchrotron-radiation photoemission

Y. H. Chang; M. L. Huang; P. Chang; J. Y. Shen; B. R. Chen; C. L. Hsu; T. W. Pi; M. Hong; J. Kwo

2011-07-01T23:59:59.000Z

446

Dielectrics for GaN based MIS-diodes  

SciTech Connect

GaN MIS diodes were demonstrated utilizing AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as insulators. A 345 {angstrom} of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) growth, a multi MBE chamber was used and a 195 {angstrom} oxide is E-beam evaporated from a single crystal source of Ga{sub 5}Gd{sub 3}O{sub 12}. The forward breakdown voltage of AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) diodes are 5V and 6V, respectively, which are significantly improved from {approximately} 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.

Ren, F.; Abernathy, C.R.; MacKenzie, J.D. [Univ. of Florida, Gainesville, FL (United States)] [and others

1998-02-01T23:59:59.000Z

447

JJ3, Anisotropic Carrier Mobility in GaN Quantum Well  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

448

LATE NEWS: L7, Molecular Beam Epitaxy of N-Polar InGaN  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

449

Y5, Electrochemical Etching of GaN and Its Applications  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

450

Collapse for Higher Gate Voltages in N-Polar GaN  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

451

N7, Olefin Metathesis Reaction on GaN (0001) Surfaces  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

452

Testing Buda-Lund hydro model on particle correlations and spectra in NA44, WA93 and WA98 heavy ion experiments  

E-Print Network (OSTI)

Analytic and numerical approximations to a hydrodynamical model describing longitudinally expanding, cylindrically symmetric, finite systems are fitted to preliminary NA44 data measured in 200 AGeV central $S + Pb$ reactions. The model describes the measured spectra and HBT radii of pions, kaons and protons, simultaneously. The source is characterized by a central freeze-out temperature of T_0 = 154 +/- 8 +/- 11 MeV, a "surface" temperature of T_r = 107 +/- 28 +/- 18 MeV and by a well-developed transverse flow, = 0.53 +/- 0.17 +/- 0.11. The transverse geometrical radius and the mean freeze-out time are found to be R_G = 5.4 +/- 0.9 +/- 0.7 fm and tau_0 = 5.1 +/- 0.3 +/- 0.3 fm/c, respectively. Fits to preliminary WA93 200 AGeV S + Au and WA98 158 AGeV Pb + Pb data dominated by pions indicate similar model parameters. The absolute normalization of the measured particle spectra together with the experimental determination of both the statistical and the systematic errors were needed to obtain successful fits.

A. Ster; T. Csorgo; B. Lorstad

1998-09-28T23:59:59.000Z

453

Anemometer Data (Wind Speed, Direction) for Quinault #3, WA (2004 - 2005) |  

Open Energy Info (EERE)

Quinault #3, WA (2004 - 2005) Quinault #3, WA (2004 - 2005) Dataset Summary Description Wind data collected from Quinault Indian Reservation in Washington from an anemometer as part of the Native American anemometer loan program. Monthly mean wind speed is available for 2004 through 2005, as is wind direction and turbulence data. Data is reported from a height of 20 m. The data was originally made available by Wind Powering America, a DOE Office of Energy Efficiency & Renewable Energy (EERE) program. A dynamic map displaying all available data from DOE anemometer loan programs is available http://www.windpoweringamerica.gov/anemometerloans/projects.asp. Source EERE Date Released December 02nd, 2010 (4 years ago) Date Updated December 02nd, 2010 (4 years ago) Keywords wind

454

EA-1855: Creston-Bell Rebuild Project, Spokane and Lincoln Counties, WA |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

855: Creston-Bell Rebuild Project, Spokane and Lincoln 855: Creston-Bell Rebuild Project, Spokane and Lincoln Counties, WA EA-1855: Creston-Bell Rebuild Project, Spokane and Lincoln Counties, WA Summary This EA (also known as DOE/EA-4406 or DOE/BP-4406) evaluates the potential environmental impacts from rebuilding the Creston-Bell No. 1 115-kV transmission line, including the replacement of wood poles and associated structural components and conductor and access road improvements. The 54-mile long, wood pole line extends from the Bonneville Power Administration (BPA) Creston substation to the BPA Bell substation near Spokane in Lincoln and Spokane Counties, Washington. Additional information about this project is available on the BPA website. Public Comment Opportunities None available at this time. Documents Available for Download

455

Intelligent Sootblowing Demonstration at Texas Glenco's W.A. Parish Plant  

Science Conference Proceedings (OSTI)

Intelligent sootblowing (ISB) optimizes the cleaning of the walls and convection passes of fossil-fired power plants to maintain high heat transfer while keeping steam temperatures and pressures as constant as possible and minimizing erosion or corrosion of tubes. This document is the second in a series of interim reports on the five-year ISB system test and demonstration project at Texas Genco's W.A. Parish plant. It summarizes ISB performance test results, outage inspection findings, and potential enha...

2003-12-09T23:59:59.000Z

456

Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon Sources  

Science Conference Proceedings (OSTI)

The GaAs quantum dots in AlGaAs barriers were grown by droplet epitaxy, emitting around 700 nm in wavelength which is compatible with low cost Si based detectors. The excitation power dependent and time resolved micro-photoluminescence measurements identified optical characteristics of exciton and biexciton states which are attributed to good quantum confinements in GaAs QDs.

Ha, S.-K.; Song, J. D.; Lim, J. Y.; Choi, W. J.; Han, I. K.; Lee, J. I. [Nano Convergence Devices Center, KIST, Seoul 136-791 (Korea, Republic of); Bounouar, S.; Donatini, F.; Dang, L. S.; Poizat, J. P. [CEA/CNRS/UJF team 'Nanophysics and semiconductors', Institute Neel/CNRS-UJF, 38042 Grenoble (France); Kim, J. S. [Department of Physics, Yeungnam University, Gyeongsan 712-749 (Korea, Republic of)

2011-12-23T23:59:59.000Z

457

Ba-Ga (Barium - Gallium)  

Science Conference Proceedings (OSTI)

Ba-Ga crystallographic data...Ba-Ga crystallographic data Phase Composition, wt% Ga Pearson symbol Space group (Ba) 0 cI 2 Im m Ba 10 Ga 4.8 cF 176 Fd m Ba 8 Ga 7 30.8 cP 60 P 2 1 3 BaGa 2 50.4 hP 3 P 6/ mmm BaGa 4 67 tI 10 I 4/ mmm (Ga) 100 hP 2 P 6 3 / mmc...

458

Al-Cr -2007-1 February 1, 2007 Aluminum and Chromium Leaching ...  

Al-Cr -2007-1 February 1, 2007 Aluminum and Chromium Leaching Workshop Atlanta, GA January 23 24, 2007 Crowne Plaza Airport Feedback Questionnaire

459

Intelligent Sootblowing Demonstration at Texas Genco's W.A. Parish Plant  

Science Conference Proceedings (OSTI)

Intelligent sootblowing (ISB) optimizes the cleaning of the walls and convection passes of fossil-fired power plants to maintain high heat transfer while keeping steam temperatures and pressures as constant as possible and minimizing erosion or corrosion of tubes. This document is the third in a series of interim reports on the five-year ISB system test and demonstration project at Texas Genco's W.A. Parish plant. Work in 2004 focused on quantifying cost savings associated with the long-term operation of...

2004-12-15T23:59:59.000Z

460

Ultra High p-doping Material Research for GaN Based Light Emitters  

Science Conference Proceedings (OSTI)

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

Vladimir Dmitriev

2007-06-30T23:59:59.000Z

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Index
461

Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots  

SciTech Connect

With the help of the photocurrent spectroscopy, the mechanism of emission of charge carriers from energy levels of the (In,Ga)As/(Al,Ga)As quantum dots of different design are studied. Thermal activation is shown to be the main mechanism of carrier emission from the quantum dots for the isolated layer of quantum dots separated by wide (Al,Ga)As spacer layers. At a small width of the (Al,Ga)As spacer layer, when electron binding of separate layers of the quantum dots in the vertical direction takes place, the role of the tunneling mechanism of carrier emission between the vertically coupled quantum dots increases.

Shatalina, E. S., E-mail: Shatalina@mail.ioffe.ru; Blokhin, S. A.; Nadtochy, A. M.; Payusov, A. S.; Savelyev, A. V.; Maximov, M. V.; Zhukov, A. E. [St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation); Ledentsov, N. N. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Kovsh, A. R.; Mikhrin, S. S.; Ustinov, V. M. [Innolume GmbH (Germany)

2010-10-15T23:59:59.000Z

462

File:EIA-Eastern-OR-WA-BOE.pdf | Open Energy Information  

Open Energy Info (EERE)

Eastern-OR-WA-BOE.pdf Eastern-OR-WA-BOE.pdf Jump to: navigation, search File File history File usage Eastern Oregon and Washington By 2001 BOE Reserve Class Size of this preview: 776 × 600 pixels. Full resolution ‎(1,650 × 1,275 pixels, file size: 460 KB, MIME type: application/pdf) Description Eastern Oregon and Washington By 2001 BOE Reserve Class Sources Energy Information Administration Authors Samuel H. Limerick; Lucy Luo; Gary Long; David F. Morehouse; Jack Perrin; Robert F. King Related Technologies Oil, Natural Gas Creation Date 2005-09-01 Extent Regional Countries United States UN Region Northern America States Oregon, Washington File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 18:00, 20 December 2010 Thumbnail for version as of 18:00, 20 December 2010 1,650 × 1,275 (460 KB) MapBot (Talk | contribs) Automated bot upload

463

File:06-WA-b - Washington Construction Storm Water Permit.pdf | Open Energy  

Open Energy Info (EERE)

File File Edit History Facebook icon Twitter icon » File:06-WA-b - Washington Construction Storm Water Permit.pdf Jump to: navigation, search File File history File usage Metadata File:06-WA-b - Washington Construction Storm Water Permit.pdf Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Go to page 1 2 Go! next page → next page → Full resolution ‎(1,275 × 1,650 pixels, file size: 60 KB, MIME type: application/pdf, 2 pages) File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 15:28, 6 December 2013 Thumbnail for version as of 15:28, 6 December 2013 1,275 × 1,650, 2 pages (60 KB) Alevine (Talk | contribs) 15:25, 6 December 2013 Thumbnail for version as of 15:25, 6 December 2013 1,275 × 1,650, 2 pages (60 KB) Alevine (Talk | contribs)

464

Growth and development of GaInAsP for use in high-efficiency solar cells  

DOE Green Energy (OSTI)

This report describes work done during Phase II of the subcontract. Goals for Phase II include the following: (1) Optimize the GaInAsP cell on GaAs and demonstrate a 500-sun at air mass (AM) 1.5 efficiency of >23%. (2) Develop a window layer, including the evaluation of AlGaAs, GaInP, AlGaAsP, AlGaInP, and GaP. (3) Develop a front-surface contact, with a grid designed for 500-sun concentration, and a goal of a contact resistivity of [approximately]10[sup 5] ohm-cm[sup 2]. (4) Grow GaInAsP cells on Ge, with a goal of a 1-sun (AM 1.5) efficiency of >15%. Accomplishments reported herein include (1) the fabrication of p-on-n and n-on-p GaInAsP cells on GaAs, with the n-on-p cell demonstrating a 10-sun (AM 1.5) active-area efficiency of 23.4% as measured at NREL (2) the evaluation of Al[sub x]Ga([sub 1-x])As, GaInP[sub 2], and AlInP[sub 2] window layers; and (3) the fabrication of GaInAsP cells on Ge, with the demonstration of a p-on-n GaInAsP cell grown on Ge with a 1-sun (AM 1.5) active-area efficiency of 14.4%.

Sharps, P.R. (Research Triangle Inst., Research Triangle Park, NC (United States))

1993-04-01T23:59:59.000Z

465

The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates  

E-Print Network (OSTI)

The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN ...

Zang, Keyan

466

ALS Spectrum  

NLE Websites -- All DOE Office Websites (Extended Search)

ALS Spectrum Print Begun in 2007, ALS Spectrum is a publication that encapsulates the same type of information contained in the ALS Activity Report but in a short, readable,...

467

ALS Spectrum  

NLE Websites -- All DOE Office Websites (Extended Search)

Spectrum Print Begun in 2007, ALS Spectrum is a publication that encapsulates the same type of information contained in the ALS Activity Report but in a short, readable,...

468

Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.  

SciTech Connect

GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.

Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

2005-12-01T23:59:59.000Z

469

Ga-Zr (Gallium - Zirconium)  

Science Conference Proceedings (OSTI)

Ga-Zr crystallographic data...Ga 5 Zr 3 44.0 oC 32 Cmcm Ga 3 Zr 2 47 oF 40 Fdd 2 βGaZr 56.7 ? ? αGaZr 56.7 tI 16 I 4 1 / amd Ga 4 Zr 5 62.1 hP 18 P 6 3 / mcm Ga 2 Zr 3 66 tP 10 P 4/ mbm Ga 3 Zr 5 68.6 hP 16 P 6 3 / mcm GaZr 2 72.4 tI 12 I 4/ mcm (βZr) ~94 to 100 cI 2 Im m (αZr) 99.4 to 100 hP 2 P 6 3 / mmc...

470

T4, Morphological Development of Homoepitaxial AlN Thin Films ...  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

471

Step-Wise Exothermic Reactions in Cold-Rolled Ni/Al, Ti/Al, and Ta ...  

Science Conference Proceedings (OSTI)

Aerosol Route Synthesis of Copper Oxide Nanoparticles Using Copper Nitrate Solution AlGaAs-Based Optical ... Defect Energetics and Fission Product Transport in ZrC ... Enhancing Mineral Beneficiation by High Intensity Power Ultrasound.

472

DOE Challenge Home Case Study TC Legend, Seattle, WA, Custom Home  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

TC Legend TC Legend Homes Seattle, WA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

473

Recipient: County of Kitsap, WA ENERGY EFFICIENCY AND CONSERVATION BLOCK GRANTS NEPA COMPLIANCE FORM  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

it: EE 000 0853 it: EE 000 0853 Recipient: County of Kitsap, WA ENERGY EFFICIENCY AND CONSERVATION BLOCK GRANTS NEPA COMPLIANCE FORM Activities Determination/ Categorical Exclusion Reviewer's Specific Instructions and Rationale (Restrictions and Allowable Activity) Kitsap Built Green Projects B5.1 Waste Stream, Engineering, and Historic Preservation clauses. Kitsap County Building Retrofits and Energy Efficiency Upgrades (Green Jobs Initiative) B5.1 except geothermal Waste Stream, Engineering, and Historic Preservation clauses. Prohibited: Any implementation of geothermal projects/construction activities without NEPA approval from DOE. Geothermal projects are to be provided to DOE for analysis. Energy Efficiency Implementation and Strategy A9, All, B5.1 None Energy Services Corps A9, All, B5.1

474

DOE Challenge Home Case Study, Dwell Development, Seattle, WA, Systems Home  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Dwell Dwell Development Seattle, WA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

475

Microsoft Word - CX-AccessRoads-KingCoWA-FY13_WEB.doc  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

22, 2013 22, 2013 REPLY TO ATTN OF: KEPR-Covington SUBJECT: Environmental Clearance Memorandum Rick Ross Engineer - TELF-TPP-3 Proposed Action: Covington District Culvert Replacements Categorical Exclusion Applied (from Subpart D, 10 C.F.R. Part 1021): Appendix B1.3, Routine Maintenance Location: King County, WA Proposed by: Bonneville Power Administration (BPA) Description of the Proposed Action: BPA is proposing to replace existing culverts at 12 access road stream crossings that present barriers to fish passage. These improvements will be made on BPA easement access roads within DNR owned and managed lands. BPA will make these improvements by installing new fish friendly culverts and/or bridges at each stream crossing. The current stream crossings do not meet DNR fish passage standards that will be in

476

DOE Challenge Home Case Study, Clifton View Homes, Coupeville, WA, Systems Home  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Clifton View Clifton View Homes Coupeville, WA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

477

Measurements of Turbulence at Two Tidal Energy Sites in Puget Sound, WA  

SciTech Connect

Field measurements of turbulence are pre- sented from two sites in Puget Sound, WA (USA) that are proposed for electrical power generation using tidal current turbines. Rapidly sampled data from multiple acoustic Doppler instruments are analyzed to obtain statistical mea- sures of fluctuations in both the magnitude and direction of the tidal currents. The resulting turbulence intensities (i.e., the turbulent velocity fluctuations normalized by the harmonic tidal currents) are typically 10% at the hub- heights (i.e., the relevant depth bin) of the proposed turbines. Length and time scales of the turbulence are also analyzed. Large-scale, anisotropic eddies dominate the energy spectra, which may be the result of proximity to headlands at each site. At small scales, an isotropic turbulent cascade is observed and used to estimate the dissipation rate of turbulent kinetic energy. Data quality and sampling parameters are discussed, with an emphasis on the removal of Doppler noise from turbulence statistics.

Thomson, Jim; Polagye, Brian; Durgesh, Vibhav; Richmond, Marshall C.

2012-06-05T23:59:59.000Z

478

Electroluminescense from InGaN Quantum Dots, in a Monolithically ...  

Science Conference Proceedings (OSTI)

We present an electrically driven structure based on a monolithically GaN/AlInN cavity with a single quantum dot layer grown by MOVPE. The device was grown...

479

Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology  

DOE Green Energy (OSTI)

This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

Vernon, S.M. (Spire Corp., Bedford, MA (United States))

1993-04-01T23:59:59.000Z

480

Polarity inversion of N-face GaN using an aluminum oxide interlayer  

Science Conference Proceedings (OSTI)

The polarity of GaN grown by plasma-assisted molecular beam epitaxy was inverted from N-face to Ga-face by inserting a composite AlN/aluminum oxide (AlO{sub x}) interlayer structure at the inversion interface. The change in polarity was verified in situ by reflection high energy electron diffraction via intensity transients and postgrowth surface reconstructions, and ex situ by convergent beam electron diffraction and etch studies in an aqueous potassium hydroxide solution. The inverted materials showed smooth surfaces and good electrical properties. AlGaN/GaN high electron mobility transistors fabricated on the inverted epilayers showed good dc and high frequency performance. A current-gain cutoff frequency (f{sub T}) of 21 GHz and maximum oscillation frequency (f{sub max}) of 61 GHz were measured in devices with a gate length of 0.7 {mu}m. These data compare favorably to those of Ga-face AlGaN/GaN devices with a similar structure grown on Si-face SiC substrates.

Wong, Man Hoi; Mishra, Umesh K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States); Wu, Feng; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2010-12-15T23:59:59.000Z

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Index
Note: This page contains sample records for the topic "al wa ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
481

ALS@20  

NLE Websites -- All DOE Office Websites (Extended Search)

feed-image feed-image Digg: ALSBerkeleyLab Facebook Page: 208064938929 Flickr: advancedlightsource Twitter: ALSBerkeleyLab YouTube: AdvancedLightSource Home About the ALS ALS@20 ALS@20 ALS@20 Kick-Off Celebration Print On Friday, January 11, the Advanced Light Source celebrated the beginning of its 20th anniversary year with a brunch attended by more than 150 current and past staff members. After introductory remarks describing the trials and tribulations encountered during the construction of the ALS from former Director Jay Marx, current ALS Scientific Director Steve Kevan and Director Roger Falcone talked about the progress of the facility over the years. Attendees were then able to view more than 500 historical photos of the ALS and its staff displayed around the room.

482

Growth and development of GaInAsP for use in high-efficiency solar cells. Annual subcontract report, 1 July 1991--30 June 1992  

DOE Green Energy (OSTI)

This report describes work done during Phase II of the subcontract. Goals for Phase II include the following: (1) Optimize the GaInAsP cell on GaAs and demonstrate a 500-sun at air mass (AM) 1.5 efficiency of >23%. (2) Develop a window layer, including the evaluation of AlGaAs, GaInP, AlGaAsP, AlGaInP, and GaP. (3) Develop a front-surface contact, with a grid designed for 500-sun concentration, and a goal of a contact resistivity of {approximately}10{sup 5} ohm-cm{sup 2}. (4) Grow GaInAsP cells on Ge, with a goal of a 1-sun (AM 1.5) efficiency of >15%. Accomplishments reported herein include (1) the fabrication of p-on-n and n-on-p GaInAsP cells on GaAs, with the n-on-p cell demonstrating a 10-sun (AM 1.5) active-area efficiency of 23.4% as measured at NREL (2) the evaluation of Al{sub x}Ga({sub 1-x})As, GaInP{sub 2}, and AlInP{sub 2} window layers; and (3) the fabrication of GaInAsP cells on Ge, with the demonstration of a p-on-n GaInAsP cell grown on Ge with a 1-sun (AM 1.5) active-area efficiency of 14.4%.

Sharps, P.R. [Research Triangle Inst., Research Triangle Park, NC (United States)

1993-04-01T23:59:59.000Z

483

Photoluminescence study of the 1.047 eV emission in GaN K. Pressela)  

E-Print Network (OSTI)

GaN/ AlGaN blue green light emitting diode, which has a much higher quantum efficiency than the SiC blue light emitting diode, became possible.2 Presently the wide bandgap semi- conductor GaN is intensively. Especially the 1.19 eV is very intense. Thus one can think of developing a light emitting diode in the near

Nabben, Reinhard

484

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth  

Science Conference Proceedings (OSTI)

Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f{sub t} and f{sub max} in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 OMEGA mum to a GaN 2DEG.

Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K. [Department of ECE, University of California, Santa Barbara, California 93106 (United States) and Department of Materials, University of California, Santa Barbara, California 93106 (United States)

2010-04-05T23:59:59.000Z

485

Polarization-engineered GaN/InGaN/GaN tunnel diodes  

E-Print Network (OSTI)

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

2010-08-24T23:59:59.000Z

486

Industry @ ALS  

NLE Websites -- All DOE Office Websites (Extended Search)

Industry @ ALS Industry @ ALS Industry @ ALS Concrete Industry Benefits from Ancient Romans and the ALS Print Thursday, 17 October 2013 14:24 New insights into the Romans' ingenious concrete harbor structures emerging from ALS beamline research could move the modern concrete industry toward its goal of a reduced carbon footprint. Summary Slide Read more... Moving Industry Forward: Finding the Environmental Opportunity in Biochar Print Thursday, 12 September 2013 08:41 Using ALS Beamlines 10.3.2 and 8.3.2, the Environmental Protection Agency (EPA) is currently investigating how biochar sorbs environmental toxins and which kinds of biochar are the most effective. The possibilities for widespread use have already launched entrepreneurial commercial ventures. Summary Slide

487

Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts  

Science Conference Proceedings (OSTI)

The paper is concerned with the theoretical and experimental studies of the band structure and electrical properties of InAlAs/InGaAs/InAlAs/InP heterostructures containing a composite InGaAs quantum well with InAs and GaAs nanoinserts. From the Shubnikov-de Haas effect, the effective cyclotron mass m{sub c}* is determined experimentally and calculated with consideration for the nonparabolicity of the electron energy spectrum. An approach to estimation of the effective mass is proposed and tested. The approach is based on weighted averaging of the m{sub c}* of the composite quantum well's constituent materials. A first proposed heterostructure containing two InAs inserts symmetrically arranged in the quantum well makes a 26% reduction in m{sub c}* compared to m{sub c}* in the lattice-matched In{sub 0.53}Ga{sub 0.47}As quantum well possible.

Ponomarev, D. S., E-mail: ponomarev_dmitr@mail.ru; Vasil'evskii, I. S. [National Nuclear Research University 'Moscow Engineering Physics Institute (MEPhI)' (Russian Federation); Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Khabibullin, R. A. [National Nuclear Research University 'Moscow Engineering Physics Institute (MEPhI)' (Russian Federation); Kulbachinskii, V. A.; Uzeeva, N. A. [Moscow State University (Russian Federation)

2012-04-15T23:59:59.000Z

488

Application of a modified denitrifying bacteria method for analyzing groundwater and vadose zone pore water nitrate at the Hanford Site, WA, USA.  

E-Print Network (OSTI)

zone pore water nitrate at the Hanford Site, WA, USA. Woods,and Conrad, Mark The Hanford Site in southern WashingtonL have been reported for Hanford groundwaters, where nitrate

Woods, Katharine N.; Singleton, Michael J.; Conrad, Mark

2003-01-01T23:59:59.000Z

489

A WASHINGTON STATE UNIVERSITY POSTDOCTORAL POSITION FOR WORK AT LIGO HANFORD, WA Applications are invited for a postdoctoral position in the Gravity Group at the Department of Physics  

E-Print Network (OSTI)

A WASHINGTON STATE UNIVERSITY POSTDOCTORAL POSITION FOR WORK AT LIGO HANFORD, WA Applications characterization for the Advanced Laser Interferometer Gravitational wave Observatory (LIGO) at the Hanford site characterization at the LIGO Hanford observatory. Familiarity with data analysis pipelines for searching

Collins, Gary S.

490

ALS Visitors  

NLE Websites -- All DOE Office Websites (Extended Search)

Energy. March 2010 ALS Project Manager Steve Rossi hosted a group of visitors from Kazakhstan on Friday, March 5. The visitors, including a representative from the Kazakhstan...

491

InGaAsN Solar Cells with 1.0eV Bandgap, Lattice Matched to GaAs  

DOE Green Energy (OSTI)

The design, growth by metal-organic chemical vapor deposition, and processing of an In{sub 0.07}Ga{sub 0.93}As{sub 0.98}N{sub 0.02} solar Al, with 1.0 ev bandgap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6-0.8 pm, and solar cell internal quantum efficiencies > 70% arc obwined. Optical studies indicate that defects or impurities, from InGAsN doping and nitrogen incorporation, limit solar cell performance.

Allerman, A.A.; Banas, J.J.; Gee, J.M.; Hammons, B.E.; Jones, E.D.; Kurtz, S.R.

1998-11-24T23:59:59.000Z

492

ALS Visitors  

NLE Websites -- All DOE Office Websites (Extended Search)

ALS Visitors ALS Visitors ALS Visitors Print Wednesday, 29 July 2009 00:00 ALS staff members host a variety of scientific, educational, government, and community-related tours each month. November 2013 poneman U.S. Deputy Secretary of Energy Daniel Poneman visited Berkeley Lab on Friday, Nov. 15, during a brief stay in the Bay Area. Glenn Mara of the University of California Office of the President and Aundra Richards of the DOE Berkeley Site Office joined Deputy Laboratory Director Horst Simon's welcome. They updated Poneman on the lab's future initiatives and current capital projects and heard briefings on cyber security, computing, and the Joint BioEnergy Institute. As second-in-command at DOE, Poneman is responsible for assisting the Secretary of Energy in the management and operations of the agency and acting on his behalf when necessary.During his tour of the ALS, Poneman (right) spoke with Ken Goldberg (Materials Sciences Division) at the CXRO beamline.

493

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name GA-SNC Solar Place Nevada Sector Solar Product Nevada-based PV project developer and joint venture of GA-Solar North America and...

494

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

495

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

496

ALS Visitors  

NLE Websites -- All DOE Office Websites (Extended Search)

ALS Visitors Print ALS Visitors Print ALS staff members host a variety of scientific, educational, government, and community-related tours each month. November 2013 poneman U.S. Deputy Secretary of Energy Daniel Poneman visited Berkeley Lab on Friday, Nov. 15, during a brief stay in the Bay Area. Glenn Mara of the University of California Office of the President and Aundra Richards of the DOE Berkeley Site Office joined Deputy Laboratory Director Horst Simon's welcome. They updated Poneman on the lab's future initiatives and current capital projects and heard briefings on cyber security, computing, and the Joint BioEnergy Institute. As second-in-command at DOE, Poneman is responsible for assisting the Secretary of Energy in the management and operations of the agency and acting on his behalf when necessary.During his tour of the ALS, Poneman (right) spoke with Ken Goldberg (Materials Sciences Division) at the CXRO beamline.

497

Al Weinrub  

NLE Websites -- All DOE Office Websites (Extended Search)

Al Weinrub Al Weinrub Author, "COMMUNITY POWER: Decentralized Renewable Energy in California" Member, Sierra Club California Clean Energy-Climate CommitteeMember, Steering Committee, Bay Area Clean Energy Alliance al.weinrub@comcast.net This speaker was a visiting speaker who delivered a talk or talks on the date(s) shown at the links below. This speaker is not otherwise associated with Lawrence Berkeley National Laboratory, unless specifically identified as a Berkeley Lab staff member. Al Weinrub is a member of the Sierra Club California Energy-Climate Committee and serves on the Steering Committee of the Bay Area's Local Clean Energy Alliance. He is the author of COMMUNITY POWER: Decentralized Renewable Energy in California (http://www.localcleanenergy.org/Community-Power-Publication)

498

Al Gallo  

Energy.gov (U.S. Department of Energy (DOE))

As the Director for the Office of Technology Evaluation, Al Gallo works closely with the Chief Technology Officer as well as many Program Offices to advance the introduction and adoption of...

499

ALS Visitors  

NLE Websites -- All DOE Office Websites (Extended Search)

Quick Facts Quick Facts ALS Visitors Print ALS staff members host a variety of scientific, educational, government, and community-related tours each month. November 2013 poneman U.S. Deputy Secretary of Energy Daniel Poneman visited Berkeley Lab on Friday, Nov. 15, during a brief stay in the Bay Area. Glenn Mara of the University of California Office of the President and Aundra Richards of the DOE Berkeley Site Office joined Deputy Laboratory Director Horst Simon's welcome. They updated Poneman on the lab's future initiatives and current capital projects and heard briefings on cyber security, computing, and the Joint BioEnergy Institute. As second-in-command at DOE, Poneman is responsible for assisting the Secretary of Energy in the management and operations of the agency and acting on his behalf when necessary.During his tour of the ALS, Poneman (right) spoke with Ken Goldberg (Materials Sciences Division) at the CXRO beamline.

500

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures  

Science Conference Proceedings (OSTI)

The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition of GaAs of the same nominal thickness leads to the formation of pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed GaAs/GaP self-assembled quantum dots (SAQDs), or pseudomorphic GaAsP/GaP SAQDs depending on the growth temperature. We demonstrate that the atomic structure of Ga(As,P)/GaP heterostructures is ruled by the temperature dependence of adatom diffusion rate and GaAs-GaP intermixing. The band alignment of pseudomorphic GaAs/GaP QW and GaAsP/GaP SAQDs is shown to be of type II, in contrast to that of fully relaxed GaAs/GaP SAQDs, which have the band alignment of type I with the lowest electronic states at the indirect L valley of the GaAs conduction band.

Abramkin, D. S.; Putyato, M. A.; Budennyy, S. A.; Gutakovskii, A. K.; Semyagin, B. R.; Preobrazhenskii, V. V.; Shamirzaev, T. S. [A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Pr. Lavrentyeva 13, 630090 Novosibirsk (Russian Federation); Kolomys, O. F.; Strelchuk, V. V. [V. E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, Pr. Nauki 41, 03028 Kiev (Ukraine)

2012-10-15T23:59:59.000Z

Index