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1

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

2

ccsd00001116 Nucleation of Al 3 Zr and Al 3 Sc in aluminum alloys  

E-Print Network (OSTI)

ccsd­00001116 (version 1) : 4 Feb 2004 Nucleation of Al 3 Zr and Al 3 Sc in aluminum alloys: from 4, 2004) Zr and Sc precipitate in aluminum alloys to form the compounds Al3Zr and Al3Sc which

3

High Efficiency Large Area AlGaAs/GaAs Concentrator Solar Cells  

Science Journals Connector (OSTI)

A 1-kWp ( peak at 100 mw/cm2 incident power dencity ) concentrating photovoltaic array with 180 square Presnel plastic lenses and AlGaAs/GaAs concentrator solar cells has been constructed. The AlGaAs/GaAs concetr...

S. Yoshida; K. Mitsui; T. Oda; Y. Yukimoto…

1981-01-01T23:59:59.000Z

4

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

5

Effects of Sc content on the microstructure of As-Cast Al-7 wt.% Si alloys  

SciTech Connect

The effects of Sc content on the microstructure of as-cast Al-Si alloys were investigated by adding 0.05, 0.1, 0.15, 0.2, 0.25, 0.3, and 0.4 wt.% Sc to hypoeutectic Al-7 wt.% Si alloys. The results show that there are significant changes in the microstructure when the Sc content is increased to 0.15%. The volume fraction of the primary {alpha}-Al phase increased nearly monotonically with increasing Sc content in the as-cast state. As the Sc content increased, the average length of the eutectic Si in the as-cast Al-7Si-xSc alloy decreased sharply from 150 {mu}m (without Sc content) to 20 {mu}m (0.4 wt.% Sc content). The Sc atoms are concentrated in the interdendritic regions. A fish-bone structure composed of Al, Si, Sc, and Fe, which might be the Fe-rich phase precipitated on the AlSc{sub 2}Si{sub 2} (V-phase) was detected adjacent to the grain boundary by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). - Highlights: Black-Right-Pointing-Pointer Significant changes in the microstructure when the Sc content is increased to 0.15%. Black-Right-Pointing-Pointer Volume fraction of the primary a-Al phase increased with increasing Sc content. Black-Right-Pointing-Pointer Average length of Si decreased sharply from 150 to 20 {mu}m with increasing Sc content. Black-Right-Pointing-Pointer The Sc atoms are concentrated in the interdendritic regions.

Zhang Wenda, E-mail: zwdno@139.com [School of Materials Science and Engineering, North University of China, Taiyuan 030051 (China); Liu Yun, E-mail: liuyun@nuc.edu.cn [School of Materials Science and Engineering, North University of China, Taiyuan 030051 (China); Yang Jing; Dang Jinzhi; Xu Hong [School of Materials Science and Engineering, North University of China, Taiyuan 030051 (China); Du Zhenmin [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China)

2012-04-15T23:59:59.000Z

6

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study  

SciTech Connect

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

2010-10-14T23:59:59.000Z

7

Issues associated with the metalorganic chemical vapor deposition of ScGaN and YGaN alloys.  

SciTech Connect

The most energy efficient solid state white light source will likely be a combination of individually efficient red, green, and blue LED. For any multi-color approach to be successful the efficiency of deep green LEDs must be significantly improved. While traditional approaches to improve InGaN materials have yielded incremental success, we proposed a novel approach using group IIIA and IIIB nitride semiconductors to produce efficient green and high wavelength LEDs. To obtain longer wavelength LEDs in the nitrides, we attempted to combine scandium (Sc) and yttrium (Y) with gallium (Ga) to produce ScGaN and YGaN for the quantum well (QW) active regions. Based on linear extrapolation of the proposed bandgaps of ScN (2.15 eV), YN (0.8 eV) and GaN (3.4 eV), we expected that LEDs could be fabricated from the UV (410 nm) to the IR (1600 nm), and therefore cover all visible wavelengths. The growth of these novel alloys potentially provided several advantages over the more traditional InGaN QW regions including: higher growth temperatures more compatible with GaN growth, closer lattice matching to GaN, and reduced phase separation than is commonly observed in InGaN growth. One drawback to using ScGaN and YGaN films as the active regions in LEDs is that little research has been conducted on their growth, specifically, are there metalorganic precursors that are suitable for growth, are the bandgaps direct or indirect, can the materials be grown directly on GaN with a minimal defect formation, as well as other issues related to growth. The major impediment to the growth of ScGaN and YGaN alloys was the low volatility of metalorganic precursors. Despite this impediment some progress was made in incorporation of Sc and Y into GaN which is detailed in this report. Primarily, we were able to incorporate up to 5 x 10{sup 18} cm{sup -3} Y atoms into a GaN film, which are far below the alloy concentrations needed to evaluate the YGaN optical properties. After a no-cost extension was granted on this program, an additional more 'liquid-like' Sc precursor was evaluated and the nitridation of Sc metals on GaN were investigated. Using the Sc precursor, dopant level quantities of Sc were incorporated into GaN, thereby concluding the growth of ScGaN and YGaN films. Our remaining time during the no-cost extension was focused on pulsed laser deposition of Sc metal films on GaN, followed by nitridation in the MOCVD reactor to form ScN. Finally, GaN films were deposited on the ScN thin films in order to study possible GaN dislocation reduction.

Koleske, Daniel David; Knapp, James Arthur; Lee, Stephen Roger; Crawford, Mary Hagerott; Creighton, James Randall; Cross, Karen Charlene; Thaler, Gerald

2009-07-01T23:59:59.000Z

8

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

9

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

10

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

11

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

12

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

13

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network (OSTI)

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

14

Synthesis and characterization of oxyanion (phosphate, sulphate) doped Ba{sub 2}Sc{sub 2-y}Ga{sub y}O{sub 5}  

SciTech Connect

In this paper we examine the effect of partial substitution of Ga for Sc in the oxyanion (phosphate, sulphate) containing perovskites, Ba{sub 2}Sc{sub 2-x}P{sub x}O{sub 5+x} and Ba{sub 2}Sc{sub 2-x}S{sub x}O{sub 5+3x/2} with the samples analysed through a combination of X-ray diffraction, TGA, Raman spectroscopy and conductivity measurements. The results demonstrate that in both cases, Ga can be incorporated in place of Sc up to 40%. In order to accommodate the increasing Ga content, a reduction in the oxyanion content is required. Thus for the highest Ga content sample achieved, only 10% oxyanion incorporation was achieved giving endmember compositions of Ba{sub 2}ScGa{sub 0.8}P{sub 0.2}O{sub 5.2} and Ba{sub 2}ScGa{sub 0.8}S{sub 0.2}O{sub 5.3} for phosphate and sulphate doping respectively. While the Ga doping was shown to significantly improve the stability of the systems towards CO{sub 2} containing atmospheres, conductivity measurements showed a reduction in the conductivity with increasing Ga content. - Graphical abstract: Phosphate and sulphate doped Ba{sub 2}Sc{sub 2-x}Ga{sub x}O{sub 5} perovskites have been successfully prepared, with the highest conductivities observed for samples with the lowest Ga content. Highlights: Black-Right-Pointing-Pointer The successful synthesis of phosphate and sulphate doped Ba{sub 2}Sc{sub 2-x}Ga{sub x}O{sub 5} perovskites. Black-Right-Pointing-Pointer The demonstration of significant oxide ion and proton conduction in these perovskites. Black-Right-Pointing-Pointer The demonstration of improved CO{sub 2} stability with increasing Ga content.

Smith, A.D.; Shin, J.F. [School of Chemistry, University of Birmingham, Birmingham B15 2TT (United Kingdom)] [School of Chemistry, University of Birmingham, Birmingham B15 2TT (United Kingdom); Slater, P.R., E-mail: p.r.slater@bham.ac.uk [School of Chemistry, University of Birmingham, Birmingham B15 2TT (United Kingdom)

2013-02-15T23:59:59.000Z

15

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

16

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

17

Reaktive Molekularstrahlepitaxie und Charakterisierung von GaN/(Al,Ga)N-Heterostrukturen auf SiC(0001).  

E-Print Network (OSTI)

??Thema dieser Arbeit ist die Synthese von hexagonalen GaN/(Al,Ga)N-Heterostrukturen mittels reaktiver Molekularstrahlepitaxie (MBE) auf SiC(0001)-Substraten. Der Einfluß der Wachstumsbedingungen auf die strukturellen, morphologischen, optischen und… (more)

Thamm, Andreas

2001-01-01T23:59:59.000Z

18

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors  

SciTech Connect

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

2013-11-25T23:59:59.000Z

19

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

20

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network (OSTI)

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells  

SciTech Connect

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arčs, R. [Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Québec (Canada)] [Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Québec (Canada); Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K. [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)] [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Fafard, S. [Cyrium Technologies Inc., Ottawa, ON (Canada)] [Cyrium Technologies Inc., Ottawa, ON (Canada)

2013-09-27T23:59:59.000Z

22

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

23

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance  

Science Journals Connector (OSTI)

A contacted electroreflectance technique was used to investigate AlGaN/GaN heterostructures and their intrinsic electric field-induced properties. By studying variations in the electroreflectance with applied field spectral features associated with the AlGaN barrier the two-dimensional electron gas at the interface and bulk GaN were identified. Barrier-layer composition and electric field were determined from the AlGaN Franz–Keldysh oscillations. For a high mobilityheterostructure grown on SiC measured AlGaN polarizationelectric field and two-dimensional electron gas density approached values predicted by a standard bandstructure model. The two-dimensional electron gas produced a broad field-tunable first derivative electroreflectance feature. With a dielectric function calculation we describe the line shape and relative amplitude of the two-dimensional electron gas electroreflectance feature for a wide range of electron density and applied field values.

S. R. Kurtz; A. A. Allerman; D. D. Koleske; A. G. Baca; R. D. Briggs

2004-01-01T23:59:59.000Z

24

Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures  

SciTech Connect

The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)

Chel'nyi, A A; Aluev, A V; Maslov, S V [M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

2004-01-31T23:59:59.000Z

25

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN  

E-Print Network (OSTI)

. Hasama, "Subpicosecond saturation of intersubband absorption in (CdS/ZnSe)/BeTe quantum well waveguides. Cho, "Intersubband absorption at ~ 1.55 m in well- and modulation-doped GaN/AlGaN multiple quantum

26

Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer  

SciTech Connect

Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup ?2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H. [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan); Kachi, T. [Toyota Central R and D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Sugimoto, M. [Toyota Motor Corporation, 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309 (Japan)

2013-12-04T23:59:59.000Z

27

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

28

Composition pulling effect and strain relief mechanism in AlGaN/AlN distributed Bragg reflectors  

SciTech Connect

We report on the composition pulling effect and strain relief mechanism in AlGaN/AlN distributed Bragg reflectors (DBRs) grown on GaN template/{alpha}-Al{sub 2}O{sub 3}(0001) by metal organic chemical vapor deposition. The reciprocal space mapping contours reveal that these DBRs are coherently grown. Cross-section transmission electron microscopy image of the AlGaN/AlN DBRs and the energy-dispersive x-ray analysis indicate that an AlGaN layer with gradient Al composition is located between the Al{sub 0.4}Ga{sub 0.6}N and AlN layers along the [0001] direction. It is attributed to the fact that Ga atoms in AlGaN are pulled and segregated to the upper layer by the strain. The density of strain energy is estimated to reduce more than one order by forming this quasi-three-sublayer structure comparing to the designed bi-sublayer structure.

Liu, B.; Zhang, R.; Ji, X. L.; Fu, D. Y.; Xie, Z. L.; Chen, D. J.; Chen, P.; Jiang, R. L.; Zheng, Y. D. [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093 (China); Zheng, J. G. [California Institute for Telecommunications and Information Technology, University of California, Irvine, California 92697-2800 (United States)

2011-06-27T23:59:59.000Z

29

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

30

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

31

GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization  

E-Print Network (OSTI)

radiation hardness than Si, GaAs, CdS and GaN, therefore it should be suitable for space applications. Last novel optoelectronic devices circumventing the problem of p-type doping of ZnO. In such Al devices become reality: the problem of p-type doping of ZnO. So far, there is no way to reliably produce

Wetzel, Christian M.

32

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network (OSTI)

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

33

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network (OSTI)

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

34

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

35

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network (OSTI)

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

36

Ga[sub 13], Al[sub 13], GaAl[sub 12], and chromium-pillared montmorillonites: Acidity and reactivity for cumene conversion  

SciTech Connect

A comparison has been made of the acidic characters of a series of metal polyoxocation pillar interlayered clay minerals (M-PILCs) by studying the infrared spectra of adsorbed pyridine. These comparisons were made for Ga[sub 13]-, Al[sub 13]- and GaAl[sub 12]-PILCs, and for Na[sup +]-exchanged montmorillonite (Na-STx-1). The Ga[sub 13]-PILC, was found to exhibit the strongest Lewis acid sites, followed by the AL[sub 13]-, and GaAl[sub 12]-PILCs and then by the Ns-STx-1. The relative number of Lewis acid sites, however, was found to be much greater for the GaAl[sub 12]-PILC, particularly after calcination at higher temperatures, indicating that the Ga[sub 13] Lewis acid sites did not have as high a thermal stability. The Broensted acidic characters for the pillared clays depend on the pillar, and follow the general decreasing order of abundance of GaAl[sub 12]-, Al[sub 13], and Ga[sub 13]-PILC when expressed as absorbance per unit mass. When the acidities per unit surface area were estimated, however, the Ga[sub 13]-PILCs were found to have the greatest number. This indicated that while the pillars contribute to the PILC acidities primarily through increasing the exposed phyllosilicate sheet surface areas, there is also a significant effect arising from the acidic characters of the pillars themselves. The dehydrogenation activities of Ga[sub 13]-, GaAl[sub 12]-, Al[sub 13]-, and Na-STx-1, in addition to a chromium polyoxocation-PILC, were compared by observing the products formed upon reaction with the model compound cumene. The Ga[sub 13]- and chromium-PILCs and the Na-Stx-1 exhibited almost exclusively dehydrogenation activities, whereas the Al[sub 13]- and GaAl[sub 12]-PILCs exhibited both cracking and dehydrogenation behaviors. These results prove that the pillars themselves can very strongly effect the catalytic activities of the PILCs. 3 refs., 6 figs., 2 tabs.

Bradley, S.M.; Kydd, R.A. (Univ. of Calgary, Alberta (Canada))

1993-05-01T23:59:59.000Z

37

Temperature dependence of optical transitions in AlGaAs  

Science Journals Connector (OSTI)

AlGaAs structures with different aluminum concentration (x=0.0 0.17 0.30 and 0.40) were characterized by photoluminescence and photoreflectance techniques. The temperature dependence of optical transitions in the temperature ranging from 2 to 300 K were investigated. Y. P. Varshni [Physica (Utrecht) 34 194 (1967)] L. Vińa et al. [Phys. Rev. B 30 1979 (1984)] and R. Pässler [Phys. Status Solidi B 200 155 (1997)] models were used to fit the experimental points. The Pässler model gave the best adjustment to the experimental points. The tree models showed that the empirical parameters obtained through the adjustment of the experimental data in the three different models are aluminum composition dependent in the ternary alloy.

S. A. Lourenço; I. F. L. Dias; J. L. Duarte; E. Laureto; E. A. Meneses; J. R. Leite; I. Mazzaro

2001-01-01T23:59:59.000Z

38

Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells  

SciTech Connect

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

2000-07-01T23:59:59.000Z

39

Magnetic-field effects on quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells  

Science Journals Connector (OSTI)

We have used the variational procedure in the effective-mass and nondegenerate parabolic band approximations in order to investigate the effects of a magnetic field on the exciton effective mass and dispersion in semiconductor heterostructures. Calculations are performed for bulk GaAs, and two-dimensional and quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells for applied magnetic fields perpendicular to the layers. A simple hydrogenlike envelope wave function provides the expected behavior for the exciton dispersion in a wide range of the center-of-mass momenta, and an analytical expression for the exciton effective mass is obtained. Present results lead to a magnetic-field dependent exciton effective mass and dispersion in quite good agreement with available experimental measurements in coupled GaAs?(Ga,Al)As quantum wells.

E. Reyes-Gómez, L. E. Oliveira, and M. de Dios-Leyva

2005-01-14T23:59:59.000Z

40

MOCVD Growth of AlGaInN for UV Emitters  

SciTech Connect

Issues related to the growth of nitride-based UV emitters are investigated in this work. More than 100 times of improved in the optical efficiency of the GaN active region can be attained with a combination of raising the growth pressure and introducing a small amount of indium. The unique issue in the UV emitter concerning the use of AlGaN for confinement and the associated tensile cracking is also investigated. They showed that the quaternary AlGaInN is potentially capable of providing confinement to GaN and GaN:In active regions while maintaining lattice matching to GaN, unlike the AlGaN ternary system.

Crawford, Mary; Han, Jung

1999-07-07T23:59:59.000Z

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Short-period superlattices of AlN/Al0.08Ga0.92N grown on AlN substrates S. A. Nikishin,a)  

E-Print Network (OSTI)

American Institute of Physics. [DOI: 10.1063/1.1815056] Layers of AlGaN with high content of AlN suffer (LEDs) and solar blind pho- todetectors. Short period superlattices (SPSLs) of AlN/Al0.08Ga0.92N maxima. The analysis of the central peak of the RSM shows a high degree of lateral co- herence of 44 m

Holtz, Mark

42

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network (OSTI)

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

43

Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics  

SciTech Connect

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

2002-10-01T23:59:59.000Z

44

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE  

NLE Websites -- All DOE Office Websites (Extended Search)

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE Identification of the Parasitic Chemical Reactions during AlGaN OMVPE by J. R. Creighton, M. E. Coltrin, and W. G. Breiland Motivation-GaN and AlGaN alloys are ex- tremely important materials with widespread applications for optoelectronics (e.g. solid state lighting) and high power electronics. Or- ganometallic vapor phase epitaxy (OMVPE) is the primary deposition methodology, but it suf- fers from several growth chemistry anomalies. Growth rate and alloy composition are often a sensitive function of temperature and other reac- tor variables. These factors make the AlGaN OMVPE process difficult to control and in- crease the cost of the material. Conventional wisdom has been that the non-ideal OMVPE behavior is due to parasitic "pre-reactions" be-

45

Interband transitions in molecular?beam?epitaxial Al x Ga1?x As/GaAs  

Science Journals Connector (OSTI)

Interband transition energies for Al x Ga1?x As layers grown by molecular?beam epitaxy(MBE) techniques have been determined using the electrolyte electroreflectance (EER) technique. The observed data fit quadratic relations for E 0 E 0+?0 E 1 and E 1+?1 to describe variations of energy with composition. Although the x values were not accurately known the internal consistency of the data is excellent. Given a single bowing parameter we show that accurate values of x can be determined. The EER technique can provide x values with an accuracy better than 0.02 and information on changes in x as small as 0.002. It is thus ideally suited for studying MBE materials.

J. L. Aubel; U. K. Reddy; S. Sundaram; W. T. Beard; James Comas

1985-01-01T23:59:59.000Z

46

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

47

Energy relaxation of hot electrons in lattice-matched AlInN/AlN/GaN heterostructures  

SciTech Connect

Using the dielectric continuum model, hot-electron power dissipation and energy relaxation times are calculated for a typical lattice-matched AlInN/AlN/GaN heterostructure, including effects of hot phonons and screening from the mobile electrons. The calculated power dissipation and energy relaxation times are very close to the experimental data.

Zhang, J.-Z.; Dyson, A. [Department of Physics, University of Hull, Hull, HU6 7RX (United Kingdom); Ridley, B. K. [School of Computing Science and Electronic Engineering, University of Essex, Colchester, CO4 3SQ (United Kingdom)

2013-12-04T23:59:59.000Z

48

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy  

SciTech Connect

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 × 10{sup ?5} cm{sup ?1}, and the length of SFs is less than 15 nm.

Shao, Jiayi; Malis, Oana [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, Dmitri N. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)] [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Edmunds, Colin [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)] [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 49707 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 49707 (United States)

2013-12-02T23:59:59.000Z

49

Transmission electron microscopy studies of GaN/gamma-LiAlO 2 heterostructures.  

E-Print Network (OSTI)

??Die vorliegende Arbeit beschaeftigt sich mit dem strukturellen Aufbau von (1-100) M-plane GaN, das mit plasmaunterstuetzter Molekularstrahlepitaxie auf gamma-LiAlO2(100) Substraten gewachsen wurde. Die heteroepitaktische Ausrichtung… (more)

Liu, Tian-Yu

2005-01-01T23:59:59.000Z

50

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

51

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network (OSTI)

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

52

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network (OSTI)

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

53

Low threshold for optical damage in AlGaN epilayers and heterostructures  

SciTech Connect

Laser pulses with duration much shorter than the effective carrier lifetime cause permanent photoluminescence (PL) quenching and enhancement of PL decay rate in bare-faceted and capped AlGaN epilayers and multiple quantum wells at pulse energies about an order of magnitude lower than those causing the surface to melt and degrade. In contrast, GaN epilayers exhibit no photomodification in the same excitation intensity range. PL spectra and decay kinetics show that lattice heating is not responsible for the observed changes in AlGaN, which result from the formation of nonradiative recombination centers via recombination-enhanced defect reactions occurring at high nonequilibrium carrier densities.

Saxena, Tanuj [Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Tamulaitis, Gintautas [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio al. 9-III, Vilnius, LT-10222 (Lithuania); Shatalov, Max; Yang, Jinwei; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209 (United States); Shur, Michael S. [Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Department of PAPA, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

2013-11-28T23:59:59.000Z

54

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

55

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

56

Dry patterning of InGaN and InAlN  

Science Journals Connector (OSTI)

Dry etch rates of In x Ga1?x N and In x Al1?x N alloys are found to increase with In mole fraction in CH4/H2microwave (2.45 GHz) discharges and to decrease under the same conditions in Cl2/H2 mixtures. Both plasma chemistries produce smooth anisotropicetching across the entire composition range from InN to either GaN or AlN. Addition of SF6 rather than H2 to a Cl2discharge produces faster etch rates and retains smooth morphologies. This suggests that either atomic hydrogen or fluorine is capable of effective removal of N from the III?V nitride materials. Ar+ ion milling rates for InGaAlN alloys are found to be approximately a factor of 2 lower than for more conventional III?V semiconductors like GaAs.

S. J. Pearton; C. R. Abernathy; F. Ren

1994-01-01T23:59:59.000Z

57

Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs,  

E-Print Network (OSTI)

Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs Evgueni A. Chagarov *, Andrew oxides Ge InGaAs InAlAs Oxide­semiconductor stack High-K oxide a b s t r a c t The structural properties

Kummel, Andrew C.

58

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P  

E-Print Network (OSTI)

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P An Chen1,a-bandgap semiconductor AlxGa1-xP is a promising material candidate for low-noise photodiodes in blue/UV spectrum. Photodiodes were fabricated on Al0.5Ga0.5P epitaxial layer grown lattice matched on GaP substrate by molecular

Woodall, Jerry M.

59

Doping and isolation of GaN, InGaN and InAlN using ion implantation  

SciTech Connect

Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after subsequent annealing in the range 600-700{degrees}C. Smaller increases in sheet resistance are observed for In{sub x}Ga{sup 1-x}N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.

Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States)] [and others

1995-08-01T23:59:59.000Z

60

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

SciTech Connect

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Invited Paper AlGaN-based high-performance metalsemiconductormetal  

E-Print Network (OSTI)

combustion monitor- ing, furnace monitoring and missile warning; secure non-line-of-sight and space photodetector was demonstrated by Khan et al. [11] in 1993. Shortly after, the first AlGaN based solar that they are not responsive to the background radiation from the sun, since the solar radiation within their spectral band (l

Ozbay, Ekmel

62

Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN  

SciTech Connect

Double heterostructures of strained GaN quantum wells (QWs) sandwiched between relaxed AlN layers provide a platform to investigate the quantum-confined electronic and optical properties of the wells. The growth of AlN/GaN/AlN heterostructures with varying GaN quantum well thicknesses on AlN by plasma molecular beam epitaxy (MBE) is reported. Photoluminescence spectra provide the optical signature of the thin GaN QWs. Reciprocal space mapping in X-ray diffraction shows that a GaN layer as thick as ?28 nm is compressively strained to the AlN layer underneath. The density of the polarization-induced two-dimensional electron gas (2DEG) in the undoped heterostructures increases with the GaN QW thickness, reaching ?2.5?×?10{sup 13}/cm{sup 2}. This provides a way to tune the 2DEG channel density without changing the thickness of the top barrier layer. Electron mobilities less than ?400 cm{sup 2}/Vs are observed, leaving ample room for improvement. Nevertheless, owing to the high 2DEG density, strained GaN QW field-effect transistors with MBE regrown ohmic contacts exhibit an on-current density ?1.4?A/mm, a transconductance ?280 mS/mm, and a cut off frequency f{sub T}?104?GHz for a 100-nm-gate-length device. These observations indicate high potential for high-speed radio frequency and high voltage applications that stand to benefit from the extreme-bandgap and high thermal conductivity of AlN.

Li, Guowang; Song, Bo; Ganguly, Satyaki; Zhu, Mingda; Wang, Ronghua; Yan, Xiaodong; Verma, Jai; Protasenko, Vladimir; Grace Xing, Huili; Jena, Debdeep, E-mail: djena@nd.edu [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2014-05-12T23:59:59.000Z

63

Carrier lifetime reduction in 1.5 m AlGaAsSb saturable absorbers with air and AlAsSb barriers  

E-Print Network (OSTI)

The SESAM structures consist of a 60-period InGaAsP/InP distributed Bragg reflector DBR and a 7-nm-thick Al exponential carrier decay time of 20 ps can be achieved. The studied AlGaAsSb absorbers were deposited on InGaAsP depth, the saturation fluence, the inverse absorption, the nonsaturable absorption, and the carrier de

Keller, Ursula

64

Vertical cavity surface emitting laser emitting at 1.56 microns with AlGaAsSb/AlAsSb distributed Bragg reflectors  

SciTech Connect

The authors report 77K operation of an optically pumped vertical cavity surface emitting laser with an Sb-based cavity. The structure consists of 15 and 20 pair AlGaAsSb/AlAsSb top and bottom reflectors and a bulk InGaAs active region.

Blum, O.; Klem, J.F.; Lear, K.L.; Vawter, G.A.; Kurtz, S.R.

1998-07-01T23:59:59.000Z

65

THz laser based on quasi-periodic AlGaAs superlattices  

SciTech Connect

The use of quasi-periodic AlGaAs superlattices as an active element of a quantum cascade laser of terahertz range is proposed and theoretically investigated. A multi-colour emission, having from three to six peaks of optical gain, is found in Fibonacci, Thue-Morse, and figurate superlattices in electric fields of intensity F = 11 - 13 kV cm{sup -1} in the frequency range f = 2 - 4 THz. The peaks depend linearly on the electric field, retain the height of 20 cm{sup -1}, and strongly depend on the thickness of the AlGaAs-layers. (lasers)

Malyshev, K V [N.E. Bauman Moscow State Technical University, Moscow (Russian Federation)

2013-06-30T23:59:59.000Z

66

Development of Polarized Electron Source of GaAs-AlGaAs Superlattice and Strained GaAs  

Science Journals Connector (OSTI)

At Nagoya University, we have continued the development of GaAs polarized electron source (PES) for several years. Our test ... a gun producing (1–5) KeV polarized electrons and a standard 100 KeV Mott polarimete...

T. Nakanishi; S. Nakamura

1991-01-01T23:59:59.000Z

67

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

68

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy  

Science Journals Connector (OSTI)

Time-resolved photoluminescence(TRPL) and positron annihilation measurements as well as Al0.23Ga0.77N/GaN heterostructuregrowth by metalorganic vapor phase epitaxy were carried out on very low defect density polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence(PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L +); i.e. decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L + being 116?nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100?K and levels off at approximately 1.1?ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al0.23Ga0.77N/GaN/Al0.18Ga0.82N/GaN heterostructure are improved by the use of FS-GaN substrates in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Al0.23Ga0.77N/GaN single heterostructuregrown on the c-plane FS-GaN substrate.

S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono

2012-01-01T23:59:59.000Z

69

Spectral research on an AlGaAs epitaxial material for a terahertz quantum-cascade laser  

Science Journals Connector (OSTI)

The spectral properties of a series of AlGaAs epitaxial films were studied by using a Fourier transform infrared spectrometer with an 80-degree grazing incidence reflection unit. The AlAs-like transversal optical...

Zhi-Yong Tan; Jun-Cheng Cao

2012-04-01T23:59:59.000Z

70

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS  

E-Print Network (OSTI)

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS Robyn C. Law 1 1 Spectrolab, Inc., A Boeing Company, Sylmar, California 91342, USA 2 California Institute of Technology, Pasadena, California 91125, USA ABSTRACT Spectrolab has demonstrated the first lattice matched In

Atwater, Harry

71

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics  

Science Journals Connector (OSTI)

An n++-GaAs/p++-AlGaAs tunnel junction with a peak current density of 10?100 A cm?2 is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10?000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500 A cm?2 and a voltage drop at 10?000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations.

I García; I Rey-Stolle; C Algora

2012-01-01T23:59:59.000Z

72

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer  

SciTech Connect

The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

Vajargah, S. Hosseini; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada) [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)] [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Preston, J. S.; Kleiman, R. N. [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada) [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2013-09-21T23:59:59.000Z

73

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network (OSTI)

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

74

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors  

SciTech Connect

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-03-10T23:59:59.000Z

75

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

0.00-1.99 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1996 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1996 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: In 1996, consumption of natural gas for agricultural use

76

Characterization of interface states in Al{sub 2}O{sub 3}/AlGaN/GaN structures for improved performance of high-electron-mobility transistors  

SciTech Connect

We have investigated the relationship between improved electrical properties of Al{sub 2}O{sub 3}/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) and electronic state densities at the Al{sub 2}O{sub 3}/AlGaN interface evaluated from the same structures as the MOS-HEMTs. To evaluate Al{sub 2}O{sub 3}/AlGaN interface state densities of the MOS-HEMTs, two types of capacitance-voltage (C-V) measurement techniques were employed: the photo-assisted C-V measurement for the near-midgap states and the frequency dependent C-V characteristics for the states near the conduction-band edge. To reduce the interface states, an N{sub 2}O-radical treatment was applied to the AlGaN surface just prior to the deposition of the Al{sub 2}O{sub 3} insulator. As compared to the sample without the treatment, the N{sub 2}O-radical treated Al{sub 2}O{sub 3}/AlGaN/GaN structure showed smaller frequency dispersion of the C-V curves in the positive gate bias range. The state densities at the Al{sub 2}O{sub 3}/AlGaN interface were estimated to be 1?×?10{sup 12}?cm{sup ?2}?eV{sup ?1} or less around the midgap and 8?×?10{sup 12}?cm{sup ?2}?eV{sup ?1} near the conduction-band edge. In addition, we observed higher maximum drain current at the positive gate bias and suppressed threshold voltage instability under the negative gate bias stress even at 150?°C. Results presented in this paper indicated that the N{sub 2}O-radical treatment is effective both in reducing the interface states and improving the electrical properties of the Al{sub 2}O{sub 3}/AlGaN/GaN MOS-HEMTs.

Hori, Y.; Yatabe, Z. [Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13 West 8, Sapporo, 060-8628 Hokkaido (Japan); Hashizume, T., E-mail: hashi@rciqe.hokudai.ac.jp [Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13 West 8, Sapporo, 060-8628 Hokkaido (Japan); Japan Science and Technology Agency (JST), CREST, Tokyo 102-0075 (Japan)

2013-12-28T23:59:59.000Z

77

Dislocation-induced fields in piezoelectric AlGaN/GaN bimaterial heterostructures  

E-Print Network (OSTI)

and energy conversion abil- ity between mechanical and electric fields, providing opportuni- ties-implanted AlN J. Appl. Phys. 112, 073525 (2012) Minimum energy structures of faceted, incoherent interfaces J. Appl. Phys. 112, 073501 (2012) Defect specific photoconductance: Carrier recombination through surface

Pan, Ernie

78

Energy levels of very short?period (GaAs) n ?(AlAs) n superlattices  

Science Journals Connector (OSTI)

The energy levels of very short?period (GaAs) n ?(AlAs) n superlattices (n?4) were investigated by photoluminescence(PL). The results show that these superlattices are type II but the lowest conduction bands are X x y for n?3 and X z for n=4 respectively. (Here X z is the valley with k parallel to the growth axis.) In both cases the X valleys are very close to each other. PL decay PL excitation and PL under uniaxial stress confirm this identification. Al0.5Ga0.5As shows very different behavior showing that even for n=1 our samples are true superlattices.

Weikun Ge; M. D. Sturge; W. D. Schmidt; L. N. Pfeiffer; K. W. West

1990-01-01T23:59:59.000Z

79

Journal of Crystal Growth 293 (2006) 273277 A study of semi-insulating GaN grown on AlN buffer/sapphire  

E-Print Network (OSTI)

-temperature GaN interlayer. In comparison with the normal GaN grown on sapphire, the crystal quality measurement results of GaN grown directly on an AlN buffer indicated that the as-grown-undoped Ga, or high density of edge-type dislocations [6­10]. However, Fe and other heavy metals tend to have reactor

Ozbay, Ekmel

80

In situ chemical sensing in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time  

E-Print Network (OSTI)

; accepted 14 June 2005; published 18 July 2005 Gallium nitride and its alloys promise to be key materials.1116/1.1993616 I. INTRODUCTION In recent years, gallium-nitride GaN - and aluminum- gallium-nitride AlGaN -based are grown at high temperatures e.g., up to 1100 °C using large concentrations of H2 carrier and NH3 N source

Rubloff, Gary W.

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Composition dependent valence band order in c-oriented wurtzite AlGaN layers  

SciTech Connect

The valence band order of polar wurtzite aluminum gallium nitride (AlGaN) layers is analyzed for a dense series of samples, grown heteroepitaxially on sapphire substrates, covering the complete composition range. The excitonic transition energies, found by temperature dependent photoluminescence (PL) spectroscopy, were corrected to the unstrained state using input from X-ray diffraction. k?p theory yields a critical relative aluminum concentration x{sub c}=(0.09±0.05) for the crossing of the uppermost two valence bands for strain free material, shifting to higher values for compressively strained samples, as supported by polarization dependent PL. The analysis of the strain dependent valence band crossing reconciles the findings of other research groups, where sample strain was neglected. We found a bowing for the energy band gap to the valence band with ?{sub 9} symmetry of b{sub ?{sub 9}}=0.85eV, and propose a possible bowing for the crystal field energy of b{sub cf}=?0.12eV. A comparison of the light extraction efficiency perpendicular and parallel to the c axis of Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N quantum well structures is discussed for different compositions.

Neuschl, B., E-mail: benjamin.neuschl@uni-ulm.de; Helbing, J.; Knab, M.; Lauer, H.; Madel, M.; Thonke, K. [Institute of Quantum Matter / Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm (Germany); Meisch, T.; Forghani, K.; Scholz, F. [Institute of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm (Germany); Feneberg, M. [Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg (Germany)

2014-09-21T23:59:59.000Z

82

Magnetotransport studies of AlGaN/GaN heterostructures with two-dimensional electron gas in parallel with a three-dimensional Al-graded layer: Incorrect hole type determination  

Science Journals Connector (OSTI)

We report magnetotransport measurements performed on AlGaN/GaN devices with different buffer layers. Standard samples with a 1??m thick GaN buffer show a linear Hall resistance and an almost constant magnetoresistance as expected from a single two-dimensional electron gas (2DEG) at the AlGaN/GaN interface. Other samples with an Al x Ga1– x N buffer (x?=?5%) and a buried linear aluminium gradient have an additional three-dimensional electron slab (3DES) close to the GaN substrate. In this case the Hall resistance is strongly non-linear and presents an incorrect hole-type carrier signature evidenced by low field mobility spectrum analysis. This effect is strengthened when the 3D layer parallel to the mesa-etched 2DEG is infinite. We suggest that the misplacement of the electrical contacts in the 3DES i.e. far from the sample edges could explain the wrong carrier type determination.

L. Konczewicz

2013-01-01T23:59:59.000Z

83

Cryogenic growth of Al nitride on GaAs(110): X-ray-photoemission spectroscopy and inverse-photoemission spectroscopy  

Science Journals Connector (OSTI)

We report on our recent studies of Al nitride growth on GaAs(110) formed by depositing Al onto a condensed ammonia overlayer on GaAs(110) at T=90 K using x-ray-photoemission spectroscopy and inverse-photoemission spectroscopy. We have also investigated the temperature dependence of the interface thus formed. The results show some limited amount of Al nitride formed at T=90 K even though the reaction is slow, but the overlayer mostly remains metallic until the substrate is heated up. Much of the reaction of Al with ammonia occurs at about T=170 K, above which the overlayer becomes insulating. The combined information from occupied and unoccupied states reveals new features of the interface formation, and is consistent with our previous synchrotron photoemission studies of Al/NH3/GaAs(100).

Ken T. Park and Y. Gao

1993-02-15T23:59:59.000Z

84

Determination of gain in AlGaN cladding free nitride laser diodes  

SciTech Connect

The optical gain spectra of InGaN-based multiple-quantum-well (MQW) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy are compared for different emission wavelengths. Two AlGaN cladding free LDs with similar epitaxial structures but with different In compositions in MQW were grown to study the dependence of material gain on lasing wavelength. As the emission wavelength increased from 432 to 458 nm, the differential modal gain decreased from 5.7 to 4.7 cm/kA, and the optical losses increased from 40 to 46 cm{sup ?1} resulting in an increase in threshold current density. This dependence is attributed to lower optical mode confinement of LD emitting at longer wavelength. We found a strong decrease of confinement factor with increasing wavelength.

Muziol, G.; Turski, H.; Wolny, P. [Institute of High Pressure Physics, Sokolowska 29/37, 01-142 Warsaw (Poland)] [Institute of High Pressure Physics, Sokolowska 29/37, 01-142 Warsaw (Poland); Siekacz, M.; Sawicka, M.; Perlin, P.; Skierbiszewski, C. [Institute of High Pressure Physics, Sokolowska 29/37, 01-142 Warsaw (Poland) [Institute of High Pressure Physics, Sokolowska 29/37, 01-142 Warsaw (Poland); TopGaN Ltd, ul Soko?owska 29/37, 01-142 Warszawa (Poland)

2013-08-05T23:59:59.000Z

85

Journal of Crystal Growth 195 (1998) 309--313 Structural and optical properties of AlInN and AlGaInN  

E-Print Network (OSTI)

and cladding layers in quantum well (QW) laser diode (LD) structures, respectively [1--3]. In contrast, little- ful: Al In N can be lattice-matched to GaN; consequently, Al \\V In V N can be used as a cladding

Wetzel, Christian M.

86

Influence of composition and heat treatment on damping and magnetostrictive properties of Fe-18%(Ga+Al) alloys  

SciTech Connect

The structure, magnetostriction and damping properties of Fe82Ga(18?x)Alx(x = 0, 5, 8, 12) alloys were analyzed. The anelastic response of Fe–18(Ga + Al) alloys was studied as a function of temperature (from 0 to 600 ?C), frequency (from 0.01 to 200 Hz) and amplitude (from 0.0004% to 0.2%) of forced vibrations. The origin of the relatively high damping capacity of Fe–Ga–Al alloy at room temperature was determined by applying a magnetic field and different heat treatment regimes. The substitution of Ga by Al in Fe–18% Ga alloys was found to decrease magnetostriction and damping. The heat treatment of alloys influences the damping capacity of alloys more than variations of their chemical compositions. Thermally activated frequency and temperature-dependent anelastic effects in Fe– Ga–Al alloys were analyzed and the corresponding activation parameters for relaxation processes were evaluated. Internal friction effects caused by structural transformations were recorded and were found to be consistent with the A2 ! D03! L12reaction. The physical mechanisms for all anelastic effects are discussed

Golovin, I S [National University of Science and Technology MISIS; Palacheva, V V [National University of Science and Technology MISIS; Zadorozhnyy, V Yu [National University of Science and Technology MISIS; Zhu, J [University of Science and Technology Beijing; Jiang, H [University of Science and Technology Beijing; Cifre, J [Universitat de les Illes Balears; Lograsso, Thomas A [Ames Laboratory

2014-10-01T23:59:59.000Z

87

Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers  

E-Print Network (OSTI)

of high Al-content AlGaN quantum well lasers Jing Zhang, Hongping Zhao, and Nelson Tansu Citation: Appl of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content Al characteristics of high Al-content AlGaN quantum wells QWs are analyzed for deep UV lasers. The effect of crystal

Gilchrist, James F.

88

Growth and electrical characterization of Al{sub 0.24}Ga{sub 0.76}As/Al{sub x}Ga{sub 1-x}As/Al{sub 0.24}Ga{sub 0.76}As modulation-doped quantum wells with extremely low x  

SciTech Connect

We report on the growth and electrical characterization of modulation-doped Al{sub 0.24}Ga{sub 0.76}As/Al{sub x}Ga{sub 1-x}As/Al{sub 0.24}Ga{sub 0.76}As quantum wells with mole fractions as low as x = 0.00057. Such structures will permit detailed studies of the impact of alloy disorder in the fractional quantum Hall regime. At zero magnetic field, we extract an alloy scattering rate of 24 ns{sup -1} per%Al. Additionally, we find that for x as low as 0.00057 in the quantum well, alloy scattering becomes the dominant mobility-limiting scattering mechanism in ultra-high purity two-dimensional electron gases typically used to study the fragile {nu} = 5/2 and {nu} = 12/5 fractional quantum Hall states.

Gardner, Geoffrey C. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Watson, John D.; Mondal, Sumit [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); Deng, Nianpei; Csathy, Gabor A. [Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States)] [Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2013-06-24T23:59:59.000Z

89

First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures  

E-Print Network (OSTI)

We propose a new method to calculate polarization induced interfacial charges in semiconductor heterostructures using classical electrostatics applied to real-space band diagrams from first principles calculations and apply it to GaN/AlN heterostructures with ultrathin AlN layers (4-6 monolayers). We show that the calculated electric fields and interfacial charges are independent of the exchange-correlation functionals used (local-density approximation and hybrid functionals). We also find the calculated interfacial charge of (6.8 +/- 0.4) x 10^13 cm-2 to be in excellent agreement with experiments and the value of 6.58 x 10^13 cm-2 calculated from bulk polarization constants, validating the use of bulk constants even for very thin films.

Rohan Mishra; Oscar D. Restrepo; Siddharth Rajan; Wolfgang Windl

2011-05-17T23:59:59.000Z

90

Surface roughening during depth profiling by Secondary Ion Mass Spectrometry (SIMS) in GaAlAs and GaAs  

Science Journals Connector (OSTI)

During bombardment of Ga1?xAlxAs and GaAs with oxygen we found an abrupt transition to higher sputter rates, change of the useful yield and significant increase of surface roughness at a well defined depth, which...

M. Gericke; T. Lill; M. Trapp; C. -E. Richter…

91

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network (OSTI)

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm GaN-on-Si...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

92

Influence of c-axis orientation and scandium concentration on infrared active modes of magnetron sputtered Sc{sub x}Al{sub 1?x}N thin films  

SciTech Connect

Doping of wurtzite aluminium nitride (AlN) with scandium (Sc) significantly enhances the piezoelectric properties of AlN. Sc{sub x}Al{sub 1?x}N thin films with different Sc concentrations (x = 0 to 0.15) were deposited by DC reactive magnetron sputtering. Infrared (IR) absorbance spectroscopy was applied to investigate the Sc concentration dependent shift of the IR active modes E{sub 1}(TO) and A{sub 1}(TO). These results are compared to ab initio simulations, being in excellent agreement with the experimental findings. In addition, IR spectroscopy is established as an economical and fast method to distinguish between thin films with a high degree of c-axis orientation and those exhibiting mixed orientations.

Mayrhofer, P. M.; Bittner, A.; Schmid, U. [Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria)] [Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria); Eisenmenger-Sittner, C. [Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstrasse 8, 1040 Vienna (Austria)] [Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstrasse 8, 1040 Vienna (Austria); Euchner, H. [Institute of Materials Science and Technology, Vienna University of Technology, Karlsplatz 13, 1040 Vienna (Austria)] [Institute of Materials Science and Technology, Vienna University of Technology, Karlsplatz 13, 1040 Vienna (Austria)

2013-12-16T23:59:59.000Z

93

Mid-infrared pump-related electric-field domains in GaAs/(Al,Ga)As quantum-cascade structures for terahertz lasing without population inversion  

SciTech Connect

We investigate the effect of mid-infrared (MIR) pumping on the transport properties of GaAs/(Al,Ga)As terahertz (THz) quantum lasers (TQLs), which rely on quantum coherence effects of intersubband transitions. Aiming at THz lasing at elevated temperatures, we extend the concept of THz gain with and without population inversion of a single, MIR-pumped, electrically driven THz stage proposed by Waldmueller et al.[Phys. Rev. Lett. 99, 117401 (2007)] to an entire TQL. However, experiments using a CO{sub 2} as well as a free-electron laser and numerical simulations show that this resonant MIR pumping causes a negative differential conductivity (NDC) in addition to the NDC caused by sequential tunneling. Lasing of these TQLs is prevented by the formation of electric-field domains below the resonance field strength for gain of each single THz stage.

Giehler, M.; Wienold, M.; Schrottke, L.; Hey, R.; Grahn, H. T. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Pavlov, S. G. [Deutsches Zentrum fuer Luft- und Raumfahrt, Rutherfordstr. 2, 12489 Berlin (Germany); Huebers, H.-W. [Deutsches Zentrum fuer Luft- und Raumfahrt, Rutherfordstr. 2, 12489 Berlin (Germany); Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Winnerl, S.; Schneider, H. [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden (Germany)

2011-11-15T23:59:59.000Z

94

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and  

E-Print Network (OSTI)

InN material lattice-matched to GaN will also be useful as cladding layer in laser structure. Specifically, Al) for solid state light- ing [1­19], visible diode lasers for both display and biosensing [20GaN and AlGaN in III-nitride based applications for LEDs [40­42] and laser diode (LD) [20­26], solar

Gilchrist, James F.

95

Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors S. L. Rumyantsev,a)  

E-Print Network (OSTI)

as the carrier gas. The n -Al0.4Ga0.6N layer was codoped using disilane (Si2H4) and TMI. As confirmed n -Al0.4Ga0.6N active layer grown with the disilane flux reduced by a factor of 10. The C

Pala, Nezih

96

Catalyst performance of novel Pt/Mg(Ga)(Al)O catalysts for alkane dehydrogenation Georges Siddiqi, Pingping Sun, Vladimir Galvita, Alexis T. Bell *  

E-Print Network (OSTI)

Catalyst performance of novel Pt/Mg(Ga)(Al)O catalysts for alkane dehydrogenation Georges Siddiqi dehydrogenation Pt Hydrotalcite a b s t r a c t The dehydrogenation of ethane and propane using a Pt catalyst supported on a novel Mg(Ga)(Al)O mixed oxide support was investigated. Catalyst performance is strongly

Bell, Alexis

97

Transport mechanism of ?- and X-band electrons in AlxGa1-xAs/AlAs/GaAs double-barrier quantum-well infrared photodetectors  

Science Journals Connector (OSTI)

The effect of the ?- and X-band electrons in the Al0.25Ga0.75As/AlAs/GaAs double-barrier quantum well (DBQW) is investigated by a microscopic empirical pseudopotential calculation. The DBQW structure used in the calculation is designed as a 3–5-?m quantum-well infrared photodetector with an associated transition energy of 313 meV. DBQW tunneling transmission via ?- and X-like states as a function of electron energy and applied voltage are described and compared to that in a single-barrier AlAs/GaAs quantum well. The dark current is simulated by the confined ground-state electron tunneling out of the well. We find that, at high-bias voltage, tunneling via X-like states increases the current by a few orders of magnitude. We have also varied the additional barrier thickness and found that for a very thin (<20 Ĺ) additional barrier DBQW, the excited-state electrons are not blocked by the ?-band barrier, and may give a high photocurrent without the assistance of the X band, although the dark current also increases. © 1996 The American Physical Society.

T. Osotchan; V. W. L. Chin; T. L. Tansley

1996-07-15T23:59:59.000Z

98

Synthesis of Nb/sub 3/Ga and Nb/sub 3/Al superconducting composites by laser beam irradiation  

SciTech Connect

Nb/sub 3/Ga and Nb/sub 3/Al superconductors were successfully fabricated by continuous CO/sub 2/ laser beam irradiation of a moving material. Transition temperatures after the irradiation are 17.0 and 16.5 K, respectively. These temperatures are increased by approx.2 K by the subsequent annealings. Critical current density J/sub c/ (for the reacted area) of 3 x 10/sup 4/ A/cm/sup 2/ at 15 T and 4.2 K is obtained for Nb/sub 3/Al tape with small magnetic field dependence up to 23 T. The results indicate that the continuous laser beam irradiation is a very attractive method for fabricating advanced superconductors, such as Nb/sub 3/Ga, Nb/sub 3/Al, Nb/sub 3/(Al,Ge), etc.

Kumakura, H.; Togano, K.; Tachikawa, K.; Yamada, Y.; Murase, S.; Nakamura, E.; Sasaki, M.

1986-03-03T23:59:59.000Z

99

Investigation of interface intermixing and roughening in low-temperature-grown AlAs/GaAs multiple quantum wells  

E-Print Network (OSTI)

Investigation of interface intermixing and roughening in low-temperature-grown AlAs/GaAs multiple to the standard-temperature-grown MQW. However, significant interface roughening and intermixing occurs- neal ambients14 have effects on interface roughening or in- termixing. In all cases, enhanced diffusion

Woodall, Jerry M.

100

A Millimeter-wave Harmonic Optoelectronic Mixer based on InAlAs/InGaAs Metamorphic HEMT  

E-Print Network (OSTI)

A Millimeter-wave Harmonic Optoelectronic Mixer based on InAlAs/InGaAs Metamorphic HEMT ChangAs substrate as a harmonic optoelectronic mixer. The fabricated metamorphic HEMT simultaneously performs photodetection at 1.55µµµµm lightwave and harmonic optoelectronic up-conversion into millimeter-wave band

Choi, Woo-Young

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
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101

Vacancy diffusion kinetics in arsenic-rich nonstoichiometric AlAsGaAs heterostructures S. Balasubramanian and S. W. Mansour  

E-Print Network (OSTI)

Vacancy diffusion kinetics in arsenic-rich nonstoichiometric AlAsĂ?GaAs heterostructures S. The intermixing is attributed to a supersaturated concentration of group-III vacancies and is enhanced by several temperatures. In this paper we establish that the decay of the excess vacancy concentration satisfies second

Nolte, David D.

102

Direct measurements of large near-band edge nonlinear index change from 1.48 to 1.55 m in InGaAsInAlGaAs multiquantum wells  

E-Print Network (OSTI)

used to measure di- rectly the nonlinear index change in bulk InGaAsP.10 Com- parison of DFWM results measurements of nonlinear refractive index change and nonlinear absorption in In0.530Al0.141Ga0.329As/In0.530Ga . The index-change-over-absorption figure of merit, F, is greater than unity over much of the spectrum

103

Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices  

E-Print Network (OSTI)

of thermoelectric energy conversion devices depends on the thermoelectric figure of merit ZT of a material, which- troduced charge carriers in the ErAs:InGaAs regions of 0, 2 1018 , 4 1018 , and 8 1018 cm-3 , respectively. There- fore, the effective carrier concentrations in the four samples were 2 1018 , 4 1018 , 6 1018

104

Narrow spectral linewidth of single zinc-blende GaN/AlN self-assembled quantum dots  

SciTech Connect

We study by microphotoluminescence the optical properties of single self-assembled zinc-blende GaN/AlN quantum dots grown by plasma-assisted molecular beam epitaxy. As opposed to previous reports, the high quality of such zinc-blende GaN quantum dots allows us to evidence a weak acoustic phonon sideband as well as a limited spectral diffusion. As a result, we report on resolution-limited quantum dot linewidths as narrow as 500 ± 50 ?eV. We finally confirm the fast radiative lifetime and high-temperature operation of such quantum dots.

Sergent, S. [Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)] [Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Kako, S. [Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)] [Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Bürger, M.; As, D. J. [Department Physik, Universität Paderborn, Warburger Str. 100, 33098 Paderborn (Germany)] [Department Physik, Universität Paderborn, Warburger Str. 100, 33098 Paderborn (Germany); Arakawa, Y. [Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan) [Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)

2013-10-07T23:59:59.000Z

105

Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement  

SciTech Connect

Two-dimensional current collapse imaging of a Schottky gate AlGaN/GaN high electron mobility transistor device was achieved by optical electric field-induced second-harmonic generation (EFISHG) measurements. EFISHG measurements can detect the electric field produced by carriers trapped in the on-state of the device, which leads to current collapse. Immediately after (e.g., 1, 100, or 800??s) the completion of drain-stress voltage (200?V) in the off-state, the second-harmonic (SH) signals appeared within 2??m from the gate edge on the drain electrode. The SH signal intensity became weak with time, which suggests that the trapped carriers are emitted from the trap sites. The SH signal location supports the well-known virtual gate model for current collapse.

Katsuno, Takashi, E-mail: e1417@mosk.tytlabs.co.jp; Ishikawa, Tsuyoshi; Ueda, Hiroyuki; Uesugi, Tsutomu [Toyota Central R and D Laboratories Inc., Nagakute, Aichi 480-1192 (Japan); Manaka, Takaaki; Iwamoto, Mitsumasa [Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552 (Japan)

2014-06-23T23:59:59.000Z

106

EV Community Readiness projects: Center for Transportation and the Environment (GA, AL, SC); Centralina Council of Governments (NC)  

Energy.gov (U.S. Department of Energy (DOE))

2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

107

Effects of built-in internal fields and Al alloy content on donor binding energy of a hydrogenic impurity in a wurtzite GaN/AlGaN quantum dot  

Science Journals Connector (OSTI)

Built-in internal field induced donor hydrogenic binding energy of an impurity in a wurtzite GaN/AlGaN quantum dot is investigated. The built-in internal electric field has the contribution from spontaneous and piezo-electric polarisation. The computations are carried out with the inclusion of conduction band non-parabolicity through the energy dependent effective mass. It is calculated with a variational approach within the framework of single band effective-mass approximation. A two-parametric trial wave function is employed in order to improve the results. The effects of quantum confinement and the strength of internal electric fields on the donor binding energy are discussed. The results show that the strength of the internal field is of the order MV/cm and it has more influence on the geometrical confinement and the composition of Al alloy content in the GaN/AlxGa1-xN quantum dot. These results are in good agreement with the other investigators.

M. Pattammal; A. John Peter

2014-01-01T23:59:59.000Z

108

Structure and zero-dimensional polariton spectrum of natural defects in GaAs/AlAs microcavities  

Science Journals Connector (OSTI)

We present a correlative study of structural and optical properties of natural defects in planar semiconductor microcavities grown by molecular beam epitaxy, which are showing a localized polariton spectrum as reported in Zajac et al. [Phys. Rev. B 85, 165309 (2012)]. The three-dimensional spatial structure of the defects was studied using combined focused ion beam (FIB) and scanning electron microscopy (SEM). We find that the defects originate from a local increase of a GaAs layer thickness. Modulation heights of up to 140 nm for oval defects and 90 nm for round defects are found, while the lateral extension is about 2 ?m for oval and 4 ?m for round defects. The GaAs thickness increase is attributed to a Ga droplet deposited during growth due to Ga cell spitting. Following the droplet deposition, the thickness modulation expands laterally while reducing its height, yielding oval to round mounds of the interfaces and the surface. With increasing growth temperature, the ellipticity of the mounds is decreasing and their size is increasing. This suggests that the expansion is related to the surface mobility of Ga, which, with increasing temperature, is increasing and reducing its anisotropy between the [110] and [11Ż0] crystallographic directions. Comprehensive data consisting of surface profiles of defects measured using differential interference contrast microscopy, volume information obtained using FIB/SEM, and characterization of the resulting confined polariton spectrum are presented.

Joanna M. Zajac and Wolfgang Langbein

2012-11-01T23:59:59.000Z

109

Successes and failures of the k?p method: A direct assessment for GaAs/AlAs quantum structures  

Science Journals Connector (OSTI)

The k?p method combined with the envelope-function approximation is the tool most commonly used to predict electronic properties of semiconductor quantum wells and superlattices. We test this approach by comparing band energies, dispersion, and wave functions for GaAs/AlAs superlattices and quantum wells as computed directly from a pseudopotential band structure and using eight-band k?p. To assure equivalent inputs, all parameters needed for the k?p treatment are extracted from calculated bulk GaAs and AlAs pseudopotential band structures. Except for large exchange splittings in the in-plane dispersion for thin superlattices, present in pseudopotential calculations but absent from the k?p results, we find generally good agreement for heterostructure hole bands within ?200 meV of the GaAs valence-band maximum. There are systematic errors in band energies and dispersion for deeper hole bands (all other than hh1 and lh1) and significant qualitative and quantitative errors for the conduction bands. Errors for heterostructure conduction states which are derived from the zinc-blende ? point diminish as length scales increase beyond ?20 ML, while significant errors persist for L- and X-derived states.For bulk GaAs and AlAs, eight-band k?p bands agree well with pseudopotential results very near the zinc-blende ? point (where k?p parameters are fit) but the first GaAs X point conduction band is ?26 eV too high with respect to the pseudopotential result. We show that this inadequate description of the bulk band dispersion is the principal source of k?p errors in these heterostructures. A wave-function projection analysis shows that k?p errors for heterostructures simply reflect corresponding errors for the bulk constituents, weighted by the amount that such bulk states participate in heterostructure states. © 1996 The American Physical Society.

D. M. Wood and Alex Zunger

1996-03-15T23:59:59.000Z

110

High photo-excited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode  

E-Print Network (OSTI)

We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77K. The detection structure is based on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QD-RTD). A photon rate of 115 photons per second had induced 10nA photocurrent in this structure, corresponding to the photo-excited carrier multiplication factor of 10^7. This high multiplication factor is achieved by the quantum dot induced memory effect and the resonant tunneling tuning effect of QD-RTD structure.

Wangping Wang; Ying Hou; Dayuan Xiong; Ning Li; Wei Lu

2007-10-15T23:59:59.000Z

111

High?quality focused?ion?beam?made mirrors for InGaP/InGaAlP visible?laser diodes  

Science Journals Connector (OSTI)

We employed a focused ion beam(FIB) to sputter the end mirrors on InGaP/InGaAlP laser diodes. This particular diode operates at a wavelength of about 670 nm. For this wavelength the quality of the sputteredmirrors is far more critical than for longer wavelength devices. The present lasers do in fact show a relatively large increase in their threshold current after FIBmicromachining. In this article we investigate the origins of this increase and how to prevent it. After optimization the lasers with a FIB?made end mirror have a threshold current comparable to that of cleaved?facet devices. We have seen that the polycrystalline structure of the device metallization on top of the laser diode causes roughening of the mirror during sputtering which results in severe scatter losses of the laser light. A method to decrease the surface roughness is given. A further reason for the increase in threshold current is optical absorption at the mirror presumably by a Ga?rich layer. This can be circumvented by chemical etching after FIB treatment to remove the absorbing layer. Finally to demonstrate the quality and the applicability of the FIB?made mirrors the influence of the tilt angle of the end mirror on the threshold current of the laser has been investigated. This dependency can be excellently described by theory.

M. H. F. Overwijk; J. A. de Poorter

1993-01-01T23:59:59.000Z

112

Electronic structure of Al- and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy  

SciTech Connect

Al- and Ga-doped sputtered ZnO films (AZO, GZO) are semiconducting and metallic, respectively, despite the same electronic valence structure of the dopants. Using hard X-ray photoelectron spectroscopy we observe that both dopants induce a band in the electronic structure near the Fermi level, accompanied by a narrowing of the Zn 3d/O 2p gap in the valence band and, in the case of GZO, a substantial shift in the Zn 3d. Ga occupies substitutional sites, whereas Al dopants are in both substitutional and interstitial sites. The latter could induce O and Zn defects, which act as acceptors explaining the semiconducting character of AZO and the lack of variation in the optical gap. By contrast, mainly substitutional doping is consistent with the metallic-like behavior of GZO.

Gabás, M.; Ramos Barrado, José R. [Lab. de Materiales and Superficies, Dpto. de Física Aplicada I, Universidad de Málaga, 29071 Málaga (Spain); Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14 km 163.5, Basovizza, I-34149 Trieste (Italy); Barrett, N. T. [CEA, DSM/IRAMIS/SPCSI, F-91191 Gif-sur-Yvette Cedex (France); Sacchi, M. [Synchrotron SOLEIL, BP 48, 91192 Gif-sur-Yvette, France and Institut des NanoSciences de Paris, UPMC Paris 06, CNRS UMR 7588, 4 Place Jussieu, 75005 Paris (France)

2014-01-01T23:59:59.000Z

113

Cl{sub 2}-based dry etching of the AlGaInN system in inductively coupled plasmas  

SciTech Connect

Cl{sub 2}-based Inductively Coupled Plasmas with low additional dc self- biases(-100V) produce convenient etch rates(500-1500 A /min) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas(Ar, N{sub 2}, H{sub 2}), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl{sub 2} in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Cho, Hyun; Vartuli, C.B.; Abernathy, C.R.; Donovan, S.M.; Pearton, S.J. [Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering; Shul, R.J.; Han, J. [Sandia National Labs., NM (United States)

1997-12-01T23:59:59.000Z

114

Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl{sub 3} pretreatment in Cl{sub 2}/Ar plasma chemistry  

SciTech Connect

Inductively coupled plasma (ICP)–reactive ion etching (RIE) patterning is a standard processing step for UV and optical photonic devices based on III-nitride materials. There is little research on ICP-RIE of high Al-content AlGaN alloys and for nonpolar nitride orientations. The authors present a comprehensive study of the ICP-RIE of c- and a-plane AlGaN in Cl{sub 2}/Ar plasma over the entire Al composition range. The authors find that the etch rate decreases in general with increasing Al content, with different behavior for c- and a-plane AlGaN. They also study the effect of BCl{sub 3} deoxidizing plasma pretreatment. An ICP deoxidizing BCl{sub 3} plasma with the addition of argon is more efficient in removal of surface oxides from Al{sub x}Ga{sub 1?x}N than RIE alone. These experiments show that Al{sub x}Ga{sub 1?x}N etching is affected by the higher binding energy of AlN and the higher affinity of oxygen to aluminum compared to gallium, with oxides on a-plane AlGaN more difficult to etch as compared to oxides on c-plane AlGaN, specifically for high Al composition materials. The authors achieve reasonably high etch rate (?350 nm/min) for high Al-content materials with a smooth surface morphology at a low DC bias of ??45 VDC.

Shah, Amit P.; Laskar, Masihhur R.; Azizur Rahman, A.; Gokhale, Maheshwar R.; Bhattacharya, Arnab [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005 (India)] [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005 (India)

2013-11-15T23:59:59.000Z

115

Nanocomposites of Semimetallic ErAs Nanoparticles Epitaxially Embedded within InGaAlAs-based Semiconductors for Thermoelectric Materials  

E-Print Network (OSTI)

GaAlAs-based Semiconductors for Thermoelectric Materials J.M.O. Zide', G. Zeng2, J.H. Bahk2, W. Kim3, S. L. Singer3, D array based on these materials for thermoelectric power generation; a power density > 1 W/cm2 is demonstrated with a temperature gradient of 120°C. Solid-state thermionics Efficient thermoelectric materials

116

Wafer-scale surface roughening for enhanced light extraction of high power AlGaInP-based light-emitting diodes  

Science Journals Connector (OSTI)

A new approach to surface roughening was established and optimized in this paper for enhancing the light extraction of high power AlGaInP-based LEDs, by combining ultraviolet (UV)...

Park, Hyeong-Ho; Zhang, Xin; Cho, Yunae; Kim, Dong-Wook; Kim, Joondong; Lee, Keun Woo; Choi, Jehyuk; Lee, Hee Kwan; Jung, Sang Hyun; Her, Eun Jin; Kim, Chang Hwan; Moon, A-Young; Shin, Chan-Soo; Shin, Hyun-Beom; Sung, Ho Kun; Park, Kyung Ho; Park, Hyung-Ho; Kim, Hi-Jung; Kang, Ho Kwan

2014-01-01T23:59:59.000Z

117

1718 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 7, JULY 2004 Solar-Blind AlGaN-Based p-i-n Photodiodes With  

E-Print Network (OSTI)

-i-n Photodiodes With Low Dark Current and High Detectivity N. Biyikli, I. Kimukin, O. Aytur, and E. Ozbay Abstract--We report solar-blind Al Ga1 N-based heterojunc- tion p-i-n photodiodes with low dark current and high. Index Terms--AlGaN, dark current, detectivity, heterostruc- ture, high-performance, p-i-n photodiode

AytĂĽr, Orhan

118

In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device based on a  

E-Print Network (OSTI)

field-plate (IFP) HEMT structure is simulated by using the two-dimensional device simulator (SILVACO and Simulation The two-dimensional device simulator used in this work was SILVACO Atlas. The structure of the Al

Yang, Kyounghoon

119

Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System  

SciTech Connect

Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated since some of the new devices are based on a wider diversity of materials to be etched. Conventional IUE (Reactive Ion Etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. IrI this paper, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma), for the etching of ternary compound semiconductors (InGaP, AIInP, AlGaP) which are employed for electronic devices like heterojunction bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. High density plasma sources, opeiating at lower pressure, are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms, which are described in this paper, can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride since the InGaAIP system shares many of the same properties.

Abernathy, C.R.; Hobson, W.S.; Hong, J.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

1998-11-04T23:59:59.000Z

120

Surface barrier height for different Al compositions and barrier layer thicknesses in AlGaN/GaN heterostructure field effect transistors  

SciTech Connect

In this paper, we present a physics based analytical model for the calculation of surface barrier height for given values of barrier layer thicknesses and Al mole fractions. An explicit expression for the two dimensional electron gas density is also developed incorporating the change in polarization charges for different Al mole fractions.

Goyal, Nitin, E-mail: goyalnitin.iitr@gmail.com; Fjeldly, Tor A. [Norwegian University of Science and Technology, Trondheim (Norway); Iniguez, Benjamin [Universitat Rovira i Virgili, Tarragona (Spain)

2013-12-04T23:59:59.000Z

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

DOE/SC-ARM-12-023 ARM Climate Research Facility AnnuAl RepoRt - 2012  

NLE Websites -- All DOE Office Websites (Extended Search)

2-023 2-023 ARM Climate Research Facility AnnuAl RepoRt - 2012 New Climate Measurement Sites h ?QOPQK?* ? * - " ?q " *"- ?l *?G qlH?b " * ?q ?e " "* ? ? - " ?*"-? "?- *"- ? "* Y? ? "? ql?l- " ?e " "* ? - ? ? * ? - *? *?n " *- K? K? ? ? "? ? "* ?- ?f "- ?h ? " ?* ? - M?? ? "? "* ? ? ?*-? ?- *"- ? ?* ? ?- ?QOPRK? ?* ?"" ? -" ? ql ? " *" ? "* ?- ? *? " * ?- *"- ? " "*" ? - ?* ?"- M??o - - ?" * * *"- ? - ?* ?*"-? "* ?" Y

122

Terahertz absorption in AlGaAs films and detection using heterojunctions  

E-Print Network (OSTI)

a Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA b NDP Optronics, LLC-mail address: uperera@gsu.edu (A.G.U. Perera). 1 Also at NDP Optronics LLC. Infrared Physics & Technology 47

Perera, A. G. Unil

123

Photodiode characteristics and band alignment parameters of epitaxial Al{sub 0.5}Ga{sub 0.5}P  

SciTech Connect

Wide-bandgap semiconductor Al{sub x}Ga{sub 1-x}P is a promising material candidate for low-noise photodiodes in blue/UV spectrum. Photodiodes were fabricated on Al{sub 0.5}Ga{sub 0.5}P epitaxial layer grown lattice matched on GaP substrate by molecular beam epitaxy. Although quantum efficiency is low for standard p-i-n photodiode due to inadvertent photon absorption in the top p-layer, it can be significantly improved by opening a recessed window in the top p-layer or by using a Schottky junction photodiode structure. Al{sub 0.5}Ga{sub 0.5}P band alignment parameters can be extrapolated from the current-voltage characteristics of Al{sub 0.5}Ga{sub 0.5}P Schottky junctions. The bandgap of Al{sub 0.5}Ga{sub 0.5}P was measured to be 2.38 eV.

Chen An [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511 (United States); Woodall, Jerry M. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2009-01-12T23:59:59.000Z

124

Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes  

SciTech Connect

AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 {mu}m to 4 {mu}m. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential resistance (NDR) was detected in the forward bias at 120 K. The NDR was observed for the mesa size of 2 {mu}m at 4 V with a peak-to-valley current ratio of 3.5. The measurement conditions were chosen to make NDR reproducible more than 50 times and apparent in both scan voltage directions after electrical treatment.

Boucherit, M.; Soltani, A.; Rousseau, M.; Deresmes, D.; Berthe, M.; Durand, C.; De Jaeger, J.-C. [IEMN/UMR-CNRS 8520, Universite Lille1, PRES Universite Lille Nord de France (France); Monroy, E. [Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble (France)

2011-10-31T23:59:59.000Z

125

The two-qubit controlled-phase gate based on cross-phase modulation in GaAs/AlGaAs semiconductor quantum wells  

E-Print Network (OSTI)

We present a realization of two-qubit controlled-phase gate, based on the linear and nonlinear properties of the probe and signal optical pulses in an asymmetric GaAs/AlGaAs double quantum wells. It is shown that, in the presence of cross-phase modulation, a giant cross-Kerr nonlinearity and mutually matched group velocities of the probe and signal optical pulses can be achieved while realizing the suppression of linear and self-Kerr optical absorption synchronously. These characteristics serve to exhibit an all-optical two-qubit controlled-phase gate within efficiently controllable photon-photon entanglement by semiconductor mediation. In addition, by using just polarizing beam splitters and half-wave plates, we propose a practical experimental scheme to discriminate the maximally entangled polarization state of two-qubit through distinguishing two out of the four Bell states. This proposal potentially enables the realization of solid states mediated all-optical quantum computation and information processing.

X. Q. Luo; D. L. Wang; H. Fan; W. M. Liu

2012-01-17T23:59:59.000Z

126

Variations of energies and line shapes of the electroreflectance spectra of epitaxial Al x Ga1?x As  

Science Journals Connector (OSTI)

The electrolyte electroreflectance (EER) spectra of Al x Ga1?x As have been obtained in the E 0 and E 1 regions and for Al concentrations ranging from x=0 to 0.65. From the spectra obtained under low field conditions the variations of the interband energies with Al concentrations have been established. Following Aspnes [Surf. Sci. 3 7 419 (1973)] we have made detailed analyses of the complex resonance line shapes of the experimentally observed modulated reflectance spectra. The parameters ? and E g have been calculated and these have been used to generate theoretically the spectra for comparison with experimental results. In addition we have also examined the effects of dc bias on the EER spectra. Variations of E 0 E 0+?0 E 1 and E 1+?1 have been discussed and results on the line?shape parameters have been presented.

J. M. Wrobel; L. C. Bassett; J. L. Aubel; S. Sundaram; John L. Davis; James Comas

1987-01-01T23:59:59.000Z

127

DOE/SC-ARM-10-032 ARM Climate Research Facility AnnuAl RepoRt - 2010  

NLE Websites -- All DOE Office Websites (Extended Search)

10-032 10-032 ARM Climate Research Facility AnnuAl RepoRt - 2010 Recovery Act HigHligHts September 2009 * One hundred percent of allocated funding from the American Recovery and Reinvestment Act of 2009 released to the Atmospheric Radiation Measurement (ARM) Climate Research Facility. October 2009 * Preliminary design reviews successfully completed for new solar spectrometer and Data Management Facility (DMF) upgrades. December 2009 * Preliminary design reviews successfully completed for 18 new radars and upgrades to existing radars. January 2010 * Design reviews completed for DMF, radars, and shipborne radar wind profiler. * Installation and integration of new equipment in process for the ARM Data Archive and aircraft infrastructure, data systems, and

128

X-ray induced persistent photoconductivity in Si-doped Al0.35Ga0.65As Yeong-Ah Soha)  

E-Print Network (OSTI)

X-ray induced persistent photoconductivity in Si-doped Al0.35Ga0.65As Yeong-Ah Soha) and G. Aeppli for publication 14 August 2001 We demonstrate that x-ray irradiation can be used to induce an insulator with fluorescence. The photoconductance as a function of incident x-ray energy exhibits an edge both at the Ga

Frenkel, Anatoly

129

Difference-frequency generation in AlGaAs Bragg reflection waveguides  

E-Print Network (OSTI)

-matching (BPM) [5,6] and quasi-phase-matching [7,8]. Among these, BPM has been shown to be the most efficient with the absorption of GaAs below 870 nm in wavelength, limits the operating window of BPM devices for infrared

130

GaInAs/AlInAs quantum cascade laser design based on optimized second harmonic generation  

Science Journals Connector (OSTI)

In this work, we present an innovative procedure for the design and optimization of GaInAs/AlInAs quantum cascade laser (QCL) structures based on the use of the genetic algorithm. The purpose of the algorithm is to determine the set of design parameters that would enable the maximization of the second order nonlinear susceptibility, thus facilitating significant optical nonlinearities to take place. In our optimization model, we start from the existing design in which the active region consists of two coupled InGaAs quantum wells separated by an AlInAs barrier, and the active region levels form double resonant nonlinear cascades. Upon obtaining the optimized structure and evaluating its energies and wave functions, the output characteristics are calculated by applying the full self-consistent rate equation modeling of the electron transport in a periodic QCL structure. The results of the calculations predict a noticeable improvement of targeted properties of the optimized design, while at the same time the original design calculations show excellent agreement with experimental results. The described procedure is applicable to various active region designs and can be used for other wavelength ranges.

A Gaji?; J Radovanovi?; V Milanovi?; D Indjin; Z Ikoni?

2014-01-01T23:59:59.000Z

131

Quantitative compositional analysis and strain study of InAs quantum wires with InGaAlAs barrier layers  

SciTech Connect

Quantitative compositional analysis of InAs quantum wires deposited between In{sub 0.53}Ga{sub 0.37}Al{sub 0.1}As barrier layers grown on InP substrates was performed by electron energy loss spectrometry and energy dispersive x-ray spectrometry. An indium-rich region in the center of the wire, with decreasing indium concentration toward the interface with the barrier layers, was observed from indium concentration maps for individual quantum wires. 'Stripelike' contrast modulation was observed in diffraction contrast transmission electron microscope images of the In{sub 0.53}Ga{sub 0.37}Al{sub 0.1}As barrier layer immediately above the quantum wires. The contrast originated from indium compositional modulations in the upper barrier layer as confirmed by electron energy loss spectrometry and the modulation is attributed to the presence of an inhomogeneous elastic strain field generated by the buried quantum wires. These results suggest that quantitative analysis of the composition and strain distributions at very high spatial resolution provides insights necessary to further model the physical properties and to understand the growth of these nanostructures.

Cui, K. [Department of Materials Science and Engineering, McMaster University, Hamilton, ON, L8S 4L7 (Canada); Robertson, M. D. [Department of Physics, Acadia University, Wolfville, NS, B4P 2R6 (Canada); Robinson, B. J. [Center for Emerging Device Technologies, McMaster University, Hamilton, ON, L8S 4L7 (Canada); Andrei, C. M. [Brockhouse Institute for Materials Research, McMaster University, Hamilton, ON, L8S 4L7 (Canada); Thompson, D. A. [Center for Emerging Device Technologies, McMaster University, Hamilton, ON, L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, ON, L8S 4L7 (Canada); Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, ON, L8S 4L7 (Canada); Brockhouse Institute for Materials Research, McMaster University, Hamilton, ON, L8S 4L7 (Canada)

2009-05-01T23:59:59.000Z

132

Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors  

SciTech Connect

The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 21011 to 21015 cm2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 21015 cm2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 21011 to 21015 cm2 exhibited minimal degradation of the saturation drain current and extrinsic trans- conductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present. VC 2011 American Vacuum Society. [DOI: 10.1116/1.3644480

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Ren, F. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2011-01-01T23:59:59.000Z

133

Q-values of the Superallowed beta-Emitters 26m-Al, 42-Sc and 46-V and their impact on V_ud and the Unitarity of the CKM Matrix  

E-Print Network (OSTI)

The beta-decay Q_EC-values of the superallowed beta emitters 26m-Al, 42-Sc and 46-V have been measured with a Penning trap to a relative precision of better than 8x10^-9. Our result for 46-V, 7052.72(31) keV, confirms a recent measurement that differed significantly from the previously accepted reaction-based Q_EC-value. However, our results for 26m-Al and 42-Sc, 4232.83(13) keV and 6426.13(21) keV, are consistent with previous reaction-based values. By eliminating the possibility of a systematic difference between the two techniques, this result demonstrates that no significant shift in the deduced value of V_ud should be anticipated.

T. Eronen; J. C. Hardy; V. Elomaa; U. Hager; J. Hakala; A. Jokinen; A. Kankainen; V. S. Kolhinen; I. Moore; H. Penttila; S. Rahaman; J. Rissanen; A. Saastamoinen; T. Sonoda; J. Aysto

2006-06-27T23:59:59.000Z

134

Electron effective mass in Al{sub 0.72}Ga{sub 0.28}N alloys determined by mid-infrared optical Hall effect  

SciTech Connect

The effective electron mass parameter in Si-doped Al{sub 0.72}Ga{sub 0.28}N is determined to be m{sup ?}=(0.336±0.020)?m{sub 0} from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m{sup ?}=0.232?m{sub 0} for GaN, an average effective electron mass of m{sup ?}=0.376?m{sub 0} can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E{sub 1}(TO) and one phonon mode behavior of the A{sub 1}(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.

Schöche, S., E-mail: schoeche@huskers.unl.edu; Kühne, P.; Hofmann, T.; Schubert, M. [Department of Electrical Engineering and CNFM, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0511 (United States)] [Department of Electrical Engineering and CNFM, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0511 (United States); Nilsson, D.; Kakanakova-Georgieva, A.; Janzén, E.; Darakchieva, V. [Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, 581 83 (Sweden)] [Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, 581 83 (Sweden)

2013-11-18T23:59:59.000Z

135

Characterization of ultraviolet excited Br * ?radical etching of InGaAs/InAlAs material system  

Science Journals Connector (OSTI)

Dry selective photochemicaletching of InGaAs/InAlAs material system in HBr gas excited by a 172 nm excimer lamp has been characterized. The etching is thought to be due to the formation of reactive Br*?radicals which are photocreated in the gas phase and then diffused into the solid semiconductor to create volatile products. The etching is temperature sensitive with best etching results at 50–110°?C. Atomic force microscope and scanning electron microscope pictures reveal that the surface morphology at this temperature range is smooth and fine. Auger electron spectroscopy and x?ray photoelectron spectroscopy measurements show that at low temperatures the etch products are primarily salts of bromide and are in the liquid phase and thus remain at the surface and a desorption process stops further etching. At slightly elevated temperature range the creation of oxides and deposition of bromine compounds reduces the etch rate and causes the surface quality to deteriorate. Etching at higher pressure range increases the etch rate of InGaAs but results in surface quality deterioration.

Soheil Habibi; Jun Tanaka; Hideki Hattori; Masahiro Totsuka; Satoru Matsumoto

1996-01-01T23:59:59.000Z

136

Influence of confined phonon modes on the thermal behavior of AlAs/GaAs quantum cascade structures  

Science Journals Connector (OSTI)

The thermal behavior of AlAs/GaAs quantum cascade structures is used to demonstrate the existence of confined and interface optical-phonon modes. The high conduction-band offset of this material system greatly improves the confinement of the electronic states and allows the realization of electroluminescence structures, where the optical power as a function of the temperature solely depends on the change of the upper-state lifetime induced by the longitudinal-optical-phonon population. We observed that the latter is proportional to the Bose-Einstein factor, with an appropriate phonon mode energy, which does not simply correspond to that of the GaAs bulk phonon (36-meV energy). In particular we show that the agreement between theory and experiment can be substantially improved when the confined and interface modes are taken into account in our calculation. Our results are corroborated by the threshold temperature dependence of lasers, with an active region based on similar structures.

C. Becker; C. Sirtori; H. Page; A. Robertson; V. Ortiz; X. Marcadet

2002-01-30T23:59:59.000Z

137

Large area supersonic jet epitaxy of AlN, GaN, and SiC on silicon  

SciTech Connect

AlN, GaN, and SiC thin films were grown on 100 mm diameter Si(111) and Si(100) substrates using Supersonic Jet Epitaxy (SJE). Precursor gases were seeded in lighter mass carrier gases and free jets were formed using novel slit-jet apertures. The jet design, combined with substrate rotation, allowed for a uniform flux distribution over a large area of a 100 mm wafer at growth pressures of 1--20 mTorr. Triethylaluminum, triethylgallium, and ammonia were used for nitride growth, while disilane, acetylene, and methylsilane were used for SiC growth. The films were characterized by in situ optical reflectivity, x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry (SE).

Lauhon, L.J.; Ustin, S.A.; Ho, W. [Cornell Univ., Ithaca, NY (United States). Dept. of Physics

1997-12-31T23:59:59.000Z

138

Modulation spectroscopy of the complex photoluminescence band of Ga0.7Al0.3As:Si  

Science Journals Connector (OSTI)

The photoluminescence and reflectivity of Ga0.7Al0.3As:Si have been studied in piezomodulation, wavelength-modulation, and photomodulation spectroscopy at low temperatures. We could identify the symmetry of the zero-phonon and phonon-assisted transitions by their comparative behavior in wavelength- and piezomodulated spectroscopy. The experimental results have been interpreted in the framework of an effective-mass model of the donor wave function in multivalley semiconductors similar to that proposed by Henning, Ansems, and Roksnoer [Semicond. Sci. Technol. 3, 361 (1988)]. Within this model, a value of the hydrostatic deformation potential of the L band in this alloy is deduced: -4.99±0.07 eV.

B. Gil, M. Leroux, J. P. Contour, and C. Chaix

1991-05-15T23:59:59.000Z

139

Radio-frequency measurements of UNiX compounds (X= Al, Ga, Ge) in high magnetic fields  

SciTech Connect

We performed radio-frequency (RF) skin-depth measurements of antiferromagnetic UNiX compounds (X=Al, Ga, Ge) in magnetic fields up to 60 T and at temperatures between 1.4 to {approx}60 K. Magnetic fields are applied along different crystallographic directions and RF penetration-depth was measured using a tunnel-diode oscillator (TDO) circuit. The sample is coupled to the inductive element of a TDO resonant tank circuit, and the shift in the resonant frequency {Delta}f of the circuit is measured. The UNiX compounds exhibit field-induced magnetic transitions at low temperatures, and those transitions are accompanied by a drastic change in {Delta}f. The results of our skin-depth measurements were compared with previously published B-T phase diagrams for these three compounds.

Mielke, Charles H [Los Alamos National Laboratory; Mcdonald, David R [Los Alamos National Laboratory; Zapf, Vivien [Los Alamos National Laboratory; Altarawneh, Moaz M [Los Alamos National Laboratory; Lacerda, Alex H [Los Alamos National Laboratory; Adak, Sourav [Los Alamos National Laboratory; Karunakar, Kothapalli [Los Alamos National Laboratory; Nakotte, Heinrich [Los Alamos National Laboratory; Chang, S [NIST; Alsmadi, A M [HASHEMITE UNIV; Alyones, S [HASHEMIT UNIV

2009-01-01T23:59:59.000Z

140

Comparison of dipole layers, band offsets, and formation enthalpies of GaAs-AlAs(110) and (001) interfaces  

Science Journals Connector (OSTI)

We report a very careful, self-consistent, relativistic pseudopotential calculation of the interfacial dipole double-layer potential, valence-band offset, and formation enthalpy of (GaAs)3(AlAs)3(110). A comparison is made with identical calculations for the (001) superlattice with the following results [(001) in parentheses]: The interfacial dipole layer is 315 (154) meV. The formation enthalpy per twelve-atom unit cell is -21.9 (+1.7) meV. The valence-band offset is 447 (446) meV. This lends credence to the idea that the band offset is a difference of bulk quantities and that vastly different interfaces set up whatever double layer is necessary to maintain that difference.

D. M. Bylander and Leonard Kleinman

1987-11-02T23:59:59.000Z

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Direct and indirect exciton states in GaAs-(Ga, Al)As double quantum wells under crossed electric and magnetic fields  

Science Journals Connector (OSTI)

A theoretical study of the direct and indirect exciton states in GaAs/Ga1-xAlxAs coupled double quantum wells under crossed electric and magnetic fields is presented. The setup of the system under consideration consists of an ... Keywords: 71.55.Eq, 73.20.Mf, 73.21.Fg, Diamagnetic shifts, Double quantum-wells, Magnetoexcitons

L. E. Oliveira; M. de Dios-Leyva; C. A. Duque

2008-03-01T23:59:59.000Z

142

AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics  

SciTech Connect

This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

Sun, K. X.

2011-05-31T23:59:59.000Z

143

Selectivity in the conversion of n-heptane on an Al-PILC modified with Ga  

Science Journals Connector (OSTI)

This work compares the catalytic activity for the hydroisomerization and hydrocracking of n-heptane for two pillared clay materials, one with polyoxycations of Al and the other with the same cation modified by...

Carmen Pesquera; Fernando González…

1995-06-01T23:59:59.000Z

144

Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells  

SciTech Connect

We have investigated the growth and electron transport in In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} two dimensional electron gases (2DEG) and compared their properties with In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As 2DEGs. For 10?nm thick InGaAs wells, the electron mobility of InGaAs/AlAsSb 2DEGs is comparable to that of InGaAs/InAlAs 2DEGs. Upon thinning the wells to 3?nm, the 2DEG mobility is degraded quickly and stronger interface roughness scattering is observed for InGaAs/AlAsSb heterointerfaces than for InGaAs/InAlAs heterointerfaces. Changing the group-V exposure between As and Sb during growth interruptions at the InGaAs/AlAsSb interfaces did not significantly change the 2DEG mobility. With the insertion of a two monolayer InAlAs at the InGaAs/AlAsSb interfaces, the interface roughness scattering is reduced and the mobility greatly increased. The room temperature 2DEG mobility shows 66% improvement from 1.63?×?10{sup 3} cm{sup 2}/V·s to 2.71?×?10{sup 3}?cm{sup 2}/V·s for a 3?nm InGaAs well.

Huang, Cheng-Ying, E-mail: cyhuang@ece.ucsb.edu; Law, Jeremy J. M.; Rodwell, Mark J. W. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Lu, Hong; Gossard, Arthur C. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106-5050 (United States); Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2014-03-28T23:59:59.000Z

145

Study of the interface of undoped and p?doped ZnSe with GaAs and AlAs  

Science Journals Connector (OSTI)

We have used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnSe/AlAs interfaces. The great sensitivity of EER to interface space?charge regions enabled us to detect both interface crossover transitions and transitions to triangular?well interface states. The observation of these transitions provides the first unambiguous proof that the ZnSe/GaAs interface is type I and allowed us to determine the band offsets and band bendings the diffusion lengths across each interface and the amount of interdiffusion.

L. Kassel; H. Abad; J. W. Garland; P. M. Raccah; J. E. Potts; M. A. Haase; H. Cheng

1990-01-01T23:59:59.000Z

146

X-ray determination of threading dislocation densities in GaN/Al{sub 2}O{sub 3}(0001) films grown by metalorganic vapor phase epitaxy  

SciTech Connect

Densities of a- and a+c-type threading dislocations for a series of GaN films grown in different modes by metalorganic vapor phase epitaxy are determined from the x-ray diffraction profiles in skew geometry. The reciprocal space maps are also studied. Theory of x-ray scattering from crystals with dislocations is extended in order to take into account contribution from both threading and misfit dislocations. The broadening of the reciprocal space maps along the surface normal and the rotation of the intensity distribution ellipse is attributed to misfit dislocations at the interface. We find that the presence of a sharp AlN/GaN interface leads to an ordering of misfit dislocations and reduces strain inhomogeneity in GaN films.

Kopp, Viktor S., E-mail: victor.kopp@pdi-berlin.de; Kaganer, Vladimir M. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin (Germany); Baidakova, Marina V.; Lundin, Wsevolod V.; Nikolaev, Andrey E.; Verkhovtceva, Elena V.; Yagovkina, Maria A. [Ioffe Physical-Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, 194021 St.-Petersburg (Russian Federation); Cherkashin, Nikolay [CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse (France)

2014-02-21T23:59:59.000Z

147

Studienordnung fr den Masterstudiengang (M.Sc.) ,,Health Care Management"  

E-Print Network (OSTI)

Studienordnung für den Masterstudiengang (M.Sc.) ,,Health Care Management" an der Ernst- Moritz den Masterstudiengang (M.Sc.) ,,Health Care Management" als Satzung: Inhaltsverzeichnis § 1.Sc.) ,,Health Care Management" an der Ernst-Moritz- Arndt-Universität Greifswald vom 18.07.2006 das Studium

Greifswald, Ernst-Moritz-Arndt-Universität

148

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

149

Above room-temperature operation of InAs/AlGaSb superlattice quantum cascade lasers emitting at 12 {mu}m  

SciTech Connect

The authors report on above-room-temperature operation of InAs/AlGaSb quantum cascade lasers emitting at 12 {mu}m. The laser structures are grown on a n-InAs (100) substrate using solid-source molecular beam epitaxy. An InAs/AlGaSb superlattice is used as an active part and an InAs double plasmon waveguide is used for optical confinement. Results show that increased doping concentration in the injection part of the active region expands the current operation range of the devices, allowing laser operation at and above room temperature. The observed threshold current density is 4.0 kA/cm{sup 2} at 300 K; the maximum operation temperature is 340 K.

Ohtani, K.; Moriyasu, Y.; Ohnishi, H.; Ohno, H. [Laboratory for Nanoelectronics and Semiconductor Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)

2007-06-25T23:59:59.000Z

150

Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy  

SciTech Connect

Nominally lattice matched InAlN/GaN was grown by plasma-assisted molecular beam epitaxy, and the intrinsic microstructure was investigated via x-ray diffraction, transmission electron microscopy, and atom probe tomography. The InAlN showed a cellular structure, which was comprised of {approx}10 nm wide Al-rich cores and {approx}1 nm In-rich InAlN intercellular boundaries. Despite the strong laterally non-uniform In distribution, both vertical and lateral lattices are unperturbed by the cellular structure, as evidenced by strong thickness fringes in on-axis {omega}-2{theta} high resolution x-ray diffraction scans, coherence lengths derived from on-axis (0002) and off-axis (1012) {omega}-2{theta} high resolution x-ray diffraction scans, and a modified Williamson-Hall analysis for on-axis reflections.

Choi, Soojeong; Wu Feng; Shivaraman, Ravi; Young, Erin C.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2012-06-04T23:59:59.000Z

151

Characterization of heavy masses of two-dimensional conduction subband in InGaAs/InAlAs MQW structures by pulsed cyclotron resonance technology  

SciTech Connect

Conduction-band effective masses in a direction parallel to the quantum well plane were investigated in n-type-modulation-doped InGaAs/InAlAs multiquantum well system. Thicknesses of well and barrier were 5 and 10 nm. Three highly-doped specimens having about 1 {times} 10{sup 12} cm{sup {minus}2} per one quantum well were prepared by MBE. Double-crystal X-ray diffraction was used to check the crystal quality. Heavy electron effective masses, almost 50% bigger than the band edge mass of 0.041m{sub 0}, were measured by far-infrared and infrared cyclotron resonances under pulse high magnetic fields up to 100 T. Nonparabolicity of this subband was less than 12% by comparing the two cyclotron resonances. Observed two-dimensional subband structure was quite different from conduction-band effective mass in a direction perpendicular to the same quantum well and from GaAs/GaAlAs quantum well system.

Kotera, N.; Tanaka, K. [Kyushu Inst. of Technology, Iizuka, Fukuoka (Japan); Arimoto, H.; Miura, N. [Univ. of Tokyo, Roppongi, Tokyo (Japan). Inst. of Solid State Physics; Jones, E.D. [Sandia National Labs., Albuquerque, NM (United States); Mishima, T. [Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.; Washima, M. [Hitachi Cable, Ltd., Tsukuba, Ibaraki (Japan). Advanced Research Center

1998-05-01T23:59:59.000Z

152

First-principles study of compensation mechanisms in negatively charged LaGaO3/MgAl2O4 interfaces  

Thin film oxide heterostructures with a bound charge at the interface require electrical compensation, which can involve redistribution of mobile charge carriers. We explore a model LaGaO3(001)//MgAl2O4(001) heterostructure with nominally negatively charged interfaces using first-principles methods and a Poisson-Boltzmann equation. We find that charge compensation by oxygen vacancies with quadratically decaying concentration away from the interface is more favorable than electronic redistribution. These vacancies have a potential to enhance ionic conductivity along the interfaces.

Rébola, Alejandro; Fong, Dillon D.; Eastman, Jeffrey A.; Ö?üt, Serdar; Zapol, Peter

2013-06-01T23:59:59.000Z

153

LBNL-4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI  

NLE Websites -- All DOE Office Websites (Extended Search)

4183E-rev1 4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI IA AB BI IL LI IT TY Y I IN N C CA AL LI IF FO OR RN NI IA A: : E EN NV VI IR RO ON NM ME EN NT TA AL L I IM MP PA AC CT TS S A AN ND D D DE EV VI IC CE E P PE ER RF FO OR RM MA AN NC CE E E EX XP PE ER RI IM ME EN NT TA AL L E EV VA AL LU UA AT TI IO ON N O OF F I IN NS ST TA AL LL LE ED D C CO OO OK KI IN NG G E EX XH HA AU US ST T F FA AN N P PE ER RF FO OR RM MA AN NC CE E Brett C. Singer, William W. Delp and Michael G. Apte Indoor Environment Department Atmospheric Sciences Department Environmental Energy Technologies Division July 2011 (Revised February 2012) Disclaimer 1 This document was prepared as an account of work sponsored by the United States Government. While this document is believed to contain correct information, neither the United States Government nor any agency thereof, nor The Regents of the University of California, nor any of

154

AL  

E-Print Network (OSTI)

AL. EMERGENCY PREPAREDNESS SYLLABUS ATTACHMENT. EMERGENCY NOTIFICATION PROCEDURES are based on a simple concept - if you hear a.

155

PUBLISHED ONLINE: 17 OCTOBER 2010 | DOI: 10.1038/NMAT2879 Waterproof AlInGaP optoelectronics on  

E-Print Network (OSTI)

InGaP optoelectronics on stretchable substrates with applications in biomedicine and robotics Rak-Hwan Kim1 , Dae opportunities for optoelectronic devices. A ll established forms of inorganic light-emitting diodes (LEDs restricting the ways in which these devices can be used. Research in organic optoelectronic materials

Rogers, John A.

156

Localized electrons in the metallic phase of the two-dimensional electron system at ,,Al,Ga...As-GaAs heterojunctions  

E-Print Network (OSTI)

Localized electrons in the metallic phase of the two-dimensional electron system at ,,Al, United Kingdom Received 29 October 1996 Using the effect of electron focusing we measure the Fermi wave vector of the delocalized electrons in a two-dimensional 2D electron system. After obtaining the total

Ludwig-Maximilians-Universität, München

157

Theoretical investigation of direct and phonon-assisted tunneling currents in InAlGaAs/InGaAs bulk and quantum-well interband tunnel junctions for multijunction solar cells  

Science Journals Connector (OSTI)

Direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk and double-quantum-well interband tunnel heterojunctions are simulated rigorously using the nonequilibrium Green's function formalism for coherent and dissipative quantum transport in combination with a simple two-band tight-binding model for the electronic structure. A realistic band profile and the associated built-in electrostatic field are obtained via self-consistent coupling of the transport formalism to Poisson's equation. The model reproduces experimentally observed features in the current-voltage characteristics of the devices, such as the pronounced current enhancement in the quantum-well junction as compared to the bulk junction and the structure appearing in the negative-differential resistance regime due to quantization of emitter states. Local maps of density of states and the current spectrum reveal the impact of quasibound states, electric fields, and electron-phonon scattering on the interband tunneling current. In this way, resonances appearing in the current through the double-quantum-well structure in the negative-differential resistance regime can be related to the alignment of subbands in the coupled quantum wells.

U. Aeberhard

2013-02-05T23:59:59.000Z

158

Highlights From SC11  

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Highlights From SC11 Highlights From SC11 Highlights From SC11 November 30, 2011 In November 2011, thousands of experts in computing and networking flocked to Seattle, Washington, to participate in tutorials, join panel discussions, lead sessions, give live demonstrations and talks, hold roundtable discussions, help build SCinet-the world's fastest science network-present posters and much more! Here are some highlights from this year's SC11 conference. Berkeley Lab's SC11 Booth - Top left and right photos by David Donofrio Prabhat and Yushu present 100G Demo- Bottom left and right photos courtesy of Yushu Yao. Lab Staff Give Awe-Inspiring Demo of 100 Gbps Capability The demo showed side-by-side presentations of a 5 terabyte dataset streamed from NERSC at 100 Gbps (left) and 10 Gbps (right).

159

Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy  

SciTech Connect

The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superlinear luminescence and increased optical power as a function of the pump current in the photon energy range of 0.6-0.8 eV are observed at temperatures of T = 77 and 300 K. The photoelectric, current-voltage, and capacitance characteristics of these heterostructures are studied in detail. The photosensitivity is examined with photodetectors operating in the photovoltaic mode in the spectral range of 0.9-2.0 {mu}m. The sensitivity maximum at room temperature is observed at a wavelength of 1.55 {mu}m. The quantum efficiency, detectivity, and response time of the photodetectors were estimated. The quantum efficiency and detectivity at the peak of the photosensitivity spectrum are as high as {eta} = 0.6-0.7 and D{sub {lambda}max}{sup *} = (5-7) Multiplication-Sign 10{sup 10} cm Hz{sup 1/2} W{sup -1}, respectively. The photodiode response time determined as the rise time of the photoresponse pulse from 0.1 to the level 0.9 is 100-200 ps. The photodiode transmission bandwidth is 2-3 GHz. Photodetectors with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates are promising foruse in heterodyne detection systems and in information technologies.

Mikhailova, M. P.; Andreev, I. A., E-mail: igor@iropt9.ioffe.ru; Ivanov, E. V.; Konovalov, G. G.; Grebentshikova, E. A.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Hulicius, E.; Hospodkova, A.; Pangrac, Y. [Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)] [Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)

2013-08-15T23:59:59.000Z

160

Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint  

SciTech Connect

We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 ?m to a modest 0.50 ?m over an underlying 0.10-?m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 ?m/3 ?m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

2011-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Thickness Effect of Al-Doped ZnO Window Layer on Damp-Heat Stability of CuInGaSe2 Solar Cells  

SciTech Connect

We investigated the damp heat (DH) stability of CuInGaSe{sub 2} (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 {micro}m to a modest 0.50 {micro}m over an underlying 0.10-{micro}m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 {micro}m/3 {micro}m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85 C and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

2011-01-01T23:59:59.000Z

162

Effect of Hydrogen and Nitrogen Carrier Gas Ratio on the Structural and Optical Properties of AlInGaN Alloy  

Science Journals Connector (OSTI)

Undoped AlInGaN epilayers on GaN templates with different hydrogen (H2) and nitrogen (N2) carrier gas ratios (1:8, 2:8, and 3:8 as samples 1, 2 and 3, respectively) were grown. When the flow ratio of H2 and N2 rises from 1:8 to 3:8, an indium composition decrease from 3% to 1.2% is observed while the aluminum content stays constant at any flow ratio. Due to the quantum-dot-like effect, photoluminescence intensity is enhanced in the sample with the low carrier gas flow ratio of H2/N2. However, the potential well caused by indium uneven distribution is nonuniform, which is more severe in the sample with carrier gas flow ratio 1:8. The process of carrier transfer from shallow to deep potential wells would be more difficult to accomplish, resulting in the reduction of the photoluminescence intensity. This is found to be consistent with the carriers' lifetime with the help of time-resolved photoluminescence.

Feng Xiang-Xu (???); Liu Nai-Xin (???); Zhang Lian (??); Zhang Ning (??); Zeng Jian-Ping (???); Wei Xue-Cheng (???); Liu Zhe (??); Wei Tong-Bo (???); Wang Jun-Xi (???); Li Jin-Min (???)

2013-01-01T23:59:59.000Z

163

Broadening and splitting of emission spectra of a GaInAs/AlInAs quantum cascade laser in a quantising magnetic field  

SciTech Connect

We have studied the effect of a relatively weak quantising magnetic field on emission spectra of a GaInAs/AlInAs quantum cascade laser near 10 K. The results demonstrate that, as the magnetic field induction increases to 7 T, the spectra broaden (to 5 meV) and split into three emission bands. As a result, we observe simultaneously up to 80 longitudinal lasing modes in the three bands and the integrated laser output intensity increases 70 times. The presence of bands in the emission spectra can be accounted for in terms of the magnetic quantisation of the laser levels into spinsplit Landau levels. The increase in emission intensity is attributable primarily to phonon resonance adjustment in a magnetic field. (lasers)

Zasavitskii, I I; Pashkeev, D A; Bushuev, E V; Mikaelyan, G T

2013-02-28T23:59:59.000Z

164

A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanche photodiode with a flip-chip structure for wavelengths of 1. 3 and 1. 55 [mu]m  

SciTech Connect

This paper reports the fabrication of a flip-chip InGaAsP-InAlAs superlattice avalanche photodiode using gas source molecular beam epitaxy. The incident light reaches the InGaAs photoabsorption layer through the InP substrate and an InGaAsP-InAlAs superlattice multiplication region which are transparent for wavelengths of 1.55 and 1.3 [mu]m. The light reflection by the electrode enables the absorption layer to be as thin as 0.8 [mu]m without significantly reducing the quantum efficiency. A maximum bandwidth of 17 GHz was obtained at a low multiplication factor because of the transit time through the absorption layer is reduced.

Kagawa, Toshiaki; Kawamura, Yuichi; Iwamura, Hidetoshi (NTT Opto-electronics Labs., Atsugi-shi, Kanagawa (Japan))

1993-05-01T23:59:59.000Z

165

Built-in biaxial strain dependence of I'-X transport in GaAs/ln,Al, -,AsJGaAs pseudomorphic heterojunction barriers (x=0, 0.03, and 0.06)  

E-Print Network (OSTI)

of thermionic emission and tunneling currents for the case of IT-X transport are signifi- cantly smaller thanBuilt-in biaxial strain dependence of I'-X transport in GaAs/ln,Al, -,AsJGaAs pseudomorphic 5800, Albuquerque, New Mexico 8718.5-1370 (Received 12 May 1994; accepted for publication 26 August

Yang, Kyounghoon

166

Zigzag and helical AlN layer prepared by glancing angle deposition and its application as a buffer layer in a GaN-based light-emitting diode  

Science Journals Connector (OSTI)

This study investigates an aluminum nitride (AlN) nanorod structure sputtered by glancing angle deposition (GLAD) and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The ray tracing ...

Lung-Chien Chen; Ching-Ho Tien; Liu Xuguang; Xu Bingshe

2012-01-01T23:59:59.000Z

167

Band alignment of HfO{sub 2}/Al{sub 0.25}Ga{sub 0.75}N determined by x-ray photoelectron spectroscopy: Effect of SiH{sub 4} surface treatment  

SciTech Connect

The band-alignment of atomic layer deposited (ALD)-HfO{sub 2}/Al{sub 0.25}Ga{sub 0.75}N was studied by high resolution x-ray photoelectron spectroscopy measurements for both the non-passivated and SiH{sub 4} passivated AlGaN surfaces. The valence band offset and the conduction band offset for the ALD-HfO{sub 2}/Al{sub 0.25}Ga{sub 0.75}N interface were found to be 0.43?eV and 1.47?eV, respectively, for the non-passivated sample, and 0.59?eV and 1.31?eV, respectively, for the SiH{sub 4}-passivated sample. The difference in the band alignment is dominated by the band bending or band shift in the AlGaN substrate as a result of the different interlayers formed by the two surface preparations.

Samuel Owen, Man Hon, E-mail: m.owen.sg@ieee.org, E-mail: yeo@ieee.org; Amin Bhuiyan, Maruf; Zhou, Qian; Yeo, Yee-Chia, E-mail: m.owen.sg@ieee.org, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260 (Singapore); Zhang, Zheng; Sheng Pan, Ji [Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

2014-03-03T23:59:59.000Z

168

Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs  

E-Print Network (OSTI)

. heavily doped GaAs 001 substrates at 650 °C with TMG Ga CH3 3 and arsine AsH3 V/III=23 with disilane Si2H6

169

Innovational radiation sensor by integrating AL2O3:C optically stimulated luminescent dosemeter and GaN detectors  

Science Journals Connector (OSTI)

......dosimetry (i.e. an active dosemeter) or one...detectable dose and the active performance of the...various applications. MATERIALS AND METHODS alpha-Al2O3...by the ratio of cathode current to optical...could be operated in active mode. | Department...radiation effects Light Materials Testing Photochemistry......

Tai-Chang Chen; Kunakorn Poochinda; Thomas G. Stoebe

2006-09-01T23:59:59.000Z

170

AlGaInP thin-film LED with omni-directionally reflector and ITO transparent conducting n-type contact  

Science Journals Connector (OSTI)

In this paper a novel AlGaInP thin-film light-emitting diode (LED) with omni-directionally reflector (ODR) and transparent conducting indium tin oxide (ITO) n-type contact structure is proposed, and fabrication process is developed. This reflector is realized with the combination of a low-refractive-index dielectric layer and a high reflectivity metal layer. This allows the light emitted or internally reflected downwardly towards the GaAs substrate at any angle of incidence to be reflected towards the top surface of the chip. ITO n-type contact is used for anti-reflection and current spreading layers on the ODR-LED with ITO. The sheet resistance of the ITO films (95 nm) deposited on n-ohmic contact of ODR-LED is of the order 23.5?/ with up to 90% transmittance (above 92% for 590–770 nm) in the visible region of the spectrum. The optical and electrical characteristics of the ODR-LED with ITO are presented and compared to conventional AS-LED and ODR-LED without ITO. It is shown that the light output from the ODR-LED with ITO at forward current 20 mA exceeds that of AS-LED and ODR-LED without ITO by about a factor of 1.63 and 0.16, respectively. A favourable luminous intensity of 218.3 mcd from the ODR-LED with ITO (peak wavelength 620 nm) could be obtained under 20 mA injection, which is 2.63 times and 1.21 times higher than that of AS-LED and ODR-LED without ITO, respectively.

Zhang Jian-Ming; Zou De-Shu; Xu Chen; Guo Wei-Ling; Zhu Yan-Xu; Liang Ting; Da Xiao-Li; Li Jian-Jun; Shen Guang-Di

2007-01-01T23:59:59.000Z

171

SC Logos | U.S. DOE Office of Science (SC)  

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SC Logos SC Logos About Organization Budget Field Offices Federal Advisory Committees History Scientific and Technical Information Honors & Awards Jobs Brochures, Logos, & Information Resources Brochures Fact Sheets SC Logos Newsletters Connect with SC Contact Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 Brochures, Logos, & Information Resources SC Logos Print Text Size: A A A RSS Feeds FeedbackShare Page Graphical Element Requirements Usage Policy Logo Description Clear Space Padding Scaling Sizing Color Variations Typography Download Official DOE SC co-Branded Logos Download DOE SC co-Branded Logos Usage Policy The DOE SC co-Branded logos should only be obtained directly from the download links on this page. Only unaltered usage is permitted. Usage does

172

Effective passivation of In{sub 0.2}Ga{sub 0.8}As by HfO{sub 2} surpassing Al{sub 2}O{sub 3} via in-situ atomic layer deposition  

SciTech Connect

High {kappa} gate dielectrics of HfO{sub 2} and Al{sub 2}O{sub 3} were deposited on molecular beam epitaxy-grown In{sub 0.2}Ga{sub 0.8}As pristine surface using in-situ atomic-layer-deposition (ALD) without any surface treatment or passivation layer. The ALD-HfO{sub 2}/p-In{sub 0.2}Ga{sub 0.8}As interface showed notable reduction in the interfacial density of states (D{sub it}), deduced from quasi-static capacitance-voltage and conductance-voltage (G-V) at room temperature and 100 Degree-Sign C. More significantly, the midgap peak commonly observed in the D{sub it}(E) of ALD-oxides/In{sub 0.2}Ga{sub 0.8}As is now greatly diminished. The midgap D{sub it} value decreases from {>=}15 Multiplication-Sign 10{sup 12} eV{sup -1} cm{sup -2} for ALD-Al{sub 2}O{sub 3} to {approx}2-4 Multiplication-Sign 10{sup 12} eV{sup -1} cm{sup -2} for ALD-HfO{sub 2}. Further, thermal stability at 850 Degree-Sign C was achieved in the HfO{sub 2}/In{sub 0.2}Ga{sub 0.8}As, whereas C-V characteristics of Al{sub 2}O{sub 3}/p-In{sub 0.2}Ga{sub 0.8}As degraded after the high temperature annealing. From in-situ x-ray photoelectron spectra, the AsO{sub x}, which is not the oxidized state from the native oxide, but is an induced state from adsorption of trimethylaluminum and H{sub 2}O, was found at the ALD-Al{sub 2}O{sub 3}/In{sub 0.2}Ga{sub 0.8}As interface, while that was not detected at the ALD-HfO{sub 2}/In{sub 0.2}Ga{sub 0.8}As interface.

Chang, Y. H.; Chiang, T. H. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, C. A.; Liu, Y. T.; Lin, H. Y.; Huang, M. L.; Kwo, J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M. [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

2012-10-22T23:59:59.000Z

173

SC Projects | U.S. DOE Office of Science (SC)  

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Projects Projects Project Assessment (OPA) OPA Home About Project Management SC Projects Review Dates (updated November 2013) Project Construction Photos Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov SC Projects Print Text Size: A A A RSS Feeds FeedbackShare Page SC Projects-Contains information regarding SC projects including project review dates, information on Office of Science Certified Federal Project Directors and Defining the Leadership Traits/Skill Set for a Successful Federal Project Director, and project photos or links to project photo sites. Last modified: 3/18/2013 10:54:36

174

Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy  

SciTech Connect

The interfacial misfit (IMF) dislocation array of an epitaxial GaSb film on a Si substrate has been imaged with high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The mismatch strain accommodation through dislocation formation has been investigated using geometric phase analysis (GPA) on HAADF-STEM images with atomic resolution to probe the defects' local strain distribution. These measurements indicate that the lattice parameter of the epitaxial film recovers its bulk value within three unit cells from the interface due to the relaxation through IMF dislocations. The atomic number contrast of the HAADF-STEM images and energy dispersive x-ray spectrometry illustrate the formation of islands of AlSb buffer layer along the interface. The role of the AlSb buffer layer in facilitating the GaSb film growth on Si is further elucidated by investigating the strain field of the islands with the GPA.

Vajargah, S. Hosseini; Couillard, M.; Cui, K. [Department of Material Science and Engineering, McMaster University, 1280 Main St. W., Hamilton, Ontario L8S 4M1 (Canada); Tavakoli, S. Ghanad; Robinson, B.; Kleiman, R. N.; Preston, J. S. [Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Botton, G. A. [Department of Material Science and Engineering, McMaster University, 1280 Main St. W., Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)

2011-02-21T23:59:59.000Z

175

SC e-journals  

Office of Scientific and Technical Information (OSTI)

SC e-journals SC e-journals Home Browse ABOUT/FAQ HELP Desktop access to journals of interest to the Office of Science Search Options Web of Science® Search citations for a wide range of peer-reviewed journals, includes cited reference searching and author identification tools. Web of Knowledge Journal Citation Reports Publisher Search Options* Many publishers provide search capabilities, including: American Chemical Society American Physical Society National Academy of Sciences *(results may include non-subscribed titles) Spotlight Neutron Diffraction Observations of Interstitial Protons in Dense Ice ORNL neutrons paint an altogether new picture of ice ORNL neutrons paint an altogether new picture of ice Image: Oak Ridge National Laboratory Neutron diffraction observations of interstitial protons in dense ice

176

PSRP SC Updated  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Name: Office of Science Name: Office of Science PSRP Lead Program Office and/or Laboratory/Site Office: Office of Science PSRP Lead Manager: Kathleen Klausing phone: 301-903-3541 e-mail: Kathleen.Klausing@science.doe.gov address: F-228, GTN Does this program align with an existing PART program? Y Does this program align with an existing CFDA program? N Office of Science (SC) Allocation of the American Recovery and Reinvestment Act (Recovery Act) funding. The Recovery Act appropriation for SC is $1.6B. Included as part of the Recovery Act are ongoing construction projects to deliver major scientific user facilities for the nation; investments in existing scientific user facilities, which host more than 20,000 users each year; many important energy-related and basic research investments;

177

Electrical conduction mechanism in La{sub 3}Ta{sub 0.5}Ga{sub 5.3}Al{sub 0.2}O{sub 14} single crystals  

SciTech Connect

The electrical conduction mechanism in La{sub 3}Ta{sub 0.5}Ga{sub 5.3}Al{sub 0.2}O{sub 14} (LTGA) single crystals was studied by nonstoichiometric defect formation during crystal growth. Since stoichiometric LTGA is not congruent, the single crystal grown from the stoichiometric melt was Ta-poor and Al-rich, where Al atoms were substituted not only in Ga sites but also in Ta sites. The population of the substitutional Al in Ta sites increased with increasing oxygen partial pressure during growth (growth-pO{sub 2}) in the range from 0.01 to 1?atm. Below 600?°C, substitutional Al atoms in Ta sites were ionized to yield holes, and thus the electrical conductivity of the LTGA crystal depended on temperature and the growth-pO{sub 2}. The dependence of the electrical conductivity on the growth-pO{sub 2} decreased as temperature increased. The temperature rise increases ionic conductivity, for which the dominant carriers are oxygen defects formed by the anion Frenkel reaction.

Yaokawa, Ritsuko, E-mail: e4777-1009@yahoo.co.jp; Aota, Katsumi [Citizen Holdings Co., Ltd., 840, Shimotomi, Tokorozawa, Saitama 359-8511 (Japan); Uda, Satoshi [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

2013-12-14T23:59:59.000Z

178

United States Patent [191 Jalali et al.  

E-Print Network (OSTI)

antennas: SPIE vol. 1703 (1992) 264-271. GA Magel et al.: "Phosphosilicate Glass waveguides for phased

Jalali. Bahram

179

NERSC Training at SC11  

NLE Websites -- All DOE Office Websites (Extended Search)

Livermore National Laboratory http:sc11.supercomputing.orgscheduleeventdetail.php?evidtut114 ABSTRACT: PGAS (Partitioned Global Address Space) languages offer both an...

180

NERSC Training at SC11  

NLE Websites -- All DOE Office Websites (Extended Search)

NASA Advanced Simulation Facility http:sc11.supercomputing.orgscheduleeventdetail.php?evidtut168 ABSTRACT: This tutorial provides an overview of the different hardware...

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While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

NERSC Training at SC11  

NLE Websites -- All DOE Office Websites (Extended Search)

Laboratory Jeff Larkin, Cray, Inc. http:sc11.supercomputing.orgscheduleeventdetail.php?evidtut146 ABSTRACT: Current supercomputer systems have architectures with many...

182

NERSC Training at SC11  

NLE Websites -- All DOE Office Websites (Extended Search)

Berkeley National Laboratory http:sc11.supercomputing.orgscheduleeventdetail.php?evidtut130 ABSTRACT: IO on HPC systems is a black art. This tutorial sheds light on...

183

Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer  

Science Journals Connector (OSTI)

A surface plasmon (SP)-enhanced nanoporous GaN-based green LED based on top-down processing technology has been successfully fabricated. This SP-enhanced LED consists of nanopores...

Yu, Zhi-Guo; Zhao, Li-Xia; Wei, Xue-Cheng; Sun, Xue-Jiao; An, Ping-Bo; Zhu, Shi-Chao; Liu, Lei; Tian, Li-Xin; Zhang, Feng; Lu, Hong-Xi; Wang, Jun-Xi; Zeng, Yi-Ping; Li, Jin-Min

2014-01-01T23:59:59.000Z

184

Informationen zum Studium (B.Sc / M.Sc.)  

E-Print Network (OSTI)

Informationen zum Studium Chemie (B.Sc / M.Sc.) #12;2 ABLAUF DES STUDIUMS, MOBILIT�TSFENSTER Der Studiengang Chemie ist ein konsekutiv aufgebauter Bachelor-Master-Studien- gang. Der berufsqualifizierende möglichst breite wissenschaftliche Grundausbil- dung in den Kernfächern der Chemie (Anorganische, Organische

Schubart, Christoph

185

Structural and band alignment properties of Al{sub 2}O{sub 3} on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy  

SciTech Connect

Structural and band alignment properties of atomic layer Al{sub 2}O{sub 3} oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al{sub 2}O{sub 3} film and the Ge epilayer. The extracted valence band offset, {Delta}E{sub v}, values of Al{sub 2}O{sub 3} relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in {Delta}E{sub v} related to the crystallographic orientation were {Delta}E{sub V}(110)Ge>{Delta}E{sub V}(100)Ge{>=}{Delta}E{sub V}(111)Ge and the conduction band offset, {Delta}E{sub c}, related to the crystallographic orientation was {Delta}E{sub c}(111)Ge>{Delta}E{sub c}(110)Ge>{Delta}E{sub c}(100)Ge using the measured {Delta}E{sub v}, bandgap of Al{sub 2}O{sub 3} in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design.

Hudait, M. K.; Zhu, Y. [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Patra, P. K. [Department of Biomedical Engineering and Department of Mechanical Engineering, University of Bridgeport, Bridgeport, Connecticut 06604 (United States); Ma, A. W. K. [Department of Chemical and Biomolecular Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269 (United States); Aphale, A.; Macwan, I. [Department of Electrical and Computer Engineering, University of Bridgeport, Bridgeport, Connecticut 06604 (United States)

2013-04-07T23:59:59.000Z

186

Origin of improved scintillation efficiency in (Lu,Gd){sub 3}(Ga,Al){sub 5}O{sub 12}:Ce multicomponent garnets: An X-ray absorption near edge spectroscopy study  

SciTech Connect

In the recent successful improvement of scintillation efficiency in Lu{sub 3}Al{sub 5}O{sub 12}:Ce driven by Ga{sup 3+} and Gd{sup 3+} admixture, the “band-gap engineering” and energy level positioning have been considered the valid strategies so far. This study revealed that this improvement was also associated with the cerium valence instability along with the changes of chemical composition. By utilizing X-ray absorption near edge spectroscopy technique, tuning the Ce{sup 3+}/Ce{sup 4+} ratio by Ga{sup 3+} admixture was evidenced, while it was kept nearly stable with the Gd{sup 3+} admixture. Ce valence instability and Ce{sup 3+}/Ce{sup 4+} ratio in multicomponent garnets can be driven by the energy separation between 4f ground state of Ce{sup 3+} and Fermi level.

Wu, Yuntao, E-mail: caswyt@hotmail.com; Luo, Jialiang; Ren, Guohao [Shanghai Institute of Ceramics, Chinese Academy of Sciences, No.215 Road, Jiading, Shanghai 201899 (China); Nikl, Martin [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 16253 Prague 6 (Czech Republic)

2014-01-01T23:59:59.000Z

187

Exploration of R2XM2 (R=Sc, Y, Ti, Zr, Hf, rare earth; X=main group element; M=transition metal, Si, Ge): Structural Motifs, the novel Compound Gd2AlGe2 and Analysis of the U3Si2 and Zr3Al2 Structure Types  

SciTech Connect

In the process of exploring and understanding the influence of crystal structure on the system of compounds with the composition Gd{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} several new compounds were synthesized with different crystal structures, but similar structural features. In Gd{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4}, the main feature of interest is the magnetocaloric effect (MCE), which allows the material to be useful in magnetic refrigeration applications. The MCE is based on the magnetic interactions of the Gd atoms in the crystal structure, which varies with x (the amount of Si in the compound). The crystal structure of Gd{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} can be thought of as being formed from two 3{sup 2}434 nets of Gd atoms, with additional Gd atoms in the cubic voids and Si/Ge atoms in the trigonal prismatic voids. Attempts were made to substitute nonmagnetic atoms for magnetic Gd using In, Mg and Al. Gd{sub 2}MgGe{sub 2} and Gd{sub 2}InGe{sub 2} both possess the same 3{sup 2}434 nets of Gd atoms as Gd{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4}, but these nets are connected differently, forming the Mo{sub 2}FeB{sub 2} crystal structure. A search of the literature revealed that compounds with the composition R{sub 2}XM{sub 2} (R=Sc, Y, Ti, Zr, Hf, rare earth; X=main group element; M=transition metal, Si, Ge) crystallize in one of four crystal structures: the Mo{sub 2}FeB{sub 2}, Zr{sub 3}Al{sub 2}, Mn{sub 2}AlB{sub 2} and W{sub 2}CoB{sub 2} crystal structures. These crystal structures are described, and the relationships between them are highlighted. Gd{sub 2}AlGe{sub 2} forms an entirely new crystal structure, and the details of its synthesis and characterization are given. Electronic structure calculations are performed to understand the nature of bonding in this compound and how electrons can be accounted for. A series of electronic structure calculations were performed on models with the U{sub 3}Si{sub 2} and Zr{sub 3}Al{sub 2} structures, using Zr and A1 as the building blocks. The starting point for these models was the U{sub 3}Si{sub 2} structure, and models were created to simulate the transition from the idealized U{sub 3}Si{sub 2} structure to the distorted Zr{sub 3}Al{sub 2} structure. Analysis of the band structures of the models has shown that the transition from the U{sub 3}Si{sub 2} structure to the Zr{sub 3}Al{sub 2} structure lifts degeneracies along the {Lambda} {yields} Z direction, indicating a Peierls-type mechanism for the displacement occurring in the positions of the Zr atoms.

Sean William McWhorter

2006-05-01T23:59:59.000Z

188

DOE/SC-ARM-XXXX DOE/SC-ARM-0706 DOE/SC-ARM-0805  

NLE Websites -- All DOE Office Websites (Extended Search)

XXXX XXXX DOE/SC-ARM-0706 DOE/SC-ARM-0805 3 Table of Contents Program Overview ............................................................................................................................................................ 4 The Importance of Clouds and Radiation for Climate Change .................................................................................... 4 ARM Climate Research Facility ................................................................................................................................... 4 Sites Around the World Enable Real Observations ......................................................................................................... 5 Setting the Standard for Ground-Based Climate Observations ........................................................................................

189

621.315.592 AlXGa1-XN  

E-Print Network (OSTI)

, : Si = (I2 ./f ) oAA/ , A0 ­ , A ­ , ­ 1, f ­ . 9. AlxGa1-xN AlN/AlGaN CF4/Ar 0x1. , AlxGa1-xN AlN/AlGaN CF4/Ar 0x1. , : 1. AlxGa1-xN 20÷26 0,56,25 . 5. AlxGa1-xN CF4/Ar ( ) / ( ) CF4/Ar = 20/4 sccm, =300, =150 = 10 . 6. AlN/Al0

Titov, Anatoly

190

Infrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a  

E-Print Network (OSTI)

GaP single QW surrounded by AlGaInP waveguide WG and cladding layers, whereas the NIR laser incorporates a GaInfrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a Robert in GaAs-based broad-area laser diodes. Spectrally and spatially resolved scanning optical microscopy

Peinke, Joachim

191

ErAs:,,InGaAs...1-x,,InAlAs...x alloy power generator modules Gehong Zeng,a  

E-Print Network (OSTI)

p-type ErAs:InGaAs alloy thermoelectric elements. The thermoelectric properties of the materials power and efficiency of a thermoelectric generator module depend largely on the material. Thermoelectric properties can be improved by introducing nanometer scale structure into materials.2 In this way

Bowers, John

192

Deep analysis of Selective area growth InGaAlAs SAG MQWs structures using micro beam high resolution X-ray diffraction and micro photoluminescence  

E-Print Network (OSTI)

to the traditional InGaAsP/InP for these specific applications is due to its larger conduction-band gap offset-speed 40 Gb/s electro-absorption modulators. The superiority of this material system compared

Sirenko, Andrei

193

C.Sc. 131: Systems ArchitectureC.Sc. 131: Systems ArchitectureC.Sc. 131: Systems Architecture ---200620062006 Systems Architecture  

E-Print Network (OSTI)

1 C.Sc. 131: Systems ArchitectureC.Sc. 131: Systems ArchitectureC.Sc. 131: Systems Architecture --- 200620062006 C.Sc. 131: Systems Architecture Dr Keith Cheverst kc@comp.lancs.ac.uk C42, infolab C.Sc. 131: Systems ArchitectureC.Sc. 131: Systems ArchitectureC.Sc. 131: Systems Architecture --- 200620062006 CSc101

Cheverst, Keith

194

SC Laboratory Appraisal Process | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SC Laboratory SC Laboratory Appraisal Process Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Laboratory Planning Process Work for Others in the Office of Science Laboratory Directed Research and Development (LDRD) Technology Transfer DOE National Laboratories Contact Information Laboratory Policy and Evaluation U.S. Department of Energy SC-32/Forrestal Building

195

Category:Charleston, SC | Open Energy Information  

Open Energy Info (EERE)

SC SC Jump to: navigation, search Go Back to PV Economics By Location Media in category "Charleston, SC" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Charleston SC South Carolina Electric&Gas Co.png SVFullServiceRestauran... 67 KB SVMidriseApartment Charleston SC South Carolina Electric&Gas Co.png SVMidriseApartment Cha... 66 KB SVQuickServiceRestaurant Charleston SC South Carolina Electric&Gas Co.png SVQuickServiceRestaura... 64 KB SVSecondarySchool Charleston SC South Carolina Electric&Gas Co.png SVSecondarySchool Char... 72 KB SVStandAloneRetail Charleston SC South Carolina Electric&Gas Co.png SVStandAloneRetail Cha... 67 KB SVHospital Charleston SC South Carolina Electric&Gas Co.png SVHospital Charleston ...

196

Construction Review | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Assessment (SC-1.3) within the Office of Science (SC) conducts independent technical, cost, schedule, and management peer reviews of SC construction projects and large...

197

Observation of strontium segregation in LaAlO{sub 3}/SrTiO{sub 3} and NdGaO{sub 3}/SrTiO{sub 3} oxide heterostructures by X-ray photoemission spectroscopy  

SciTech Connect

LaAlO{sub 3} and NdGaO{sub 3} thin films of different thicknesses have been grown by pulsed laser deposition on TiO{sub 2}-terminated SrTiO{sub 3} single crystals and investigated by soft X-ray photoemission spectroscopy. The surface sensitivity of the measurements has been tuned by varying photon energy h? and emission angle ?. In contrast to the core levels of the other elements, the Sr 3d line shows an unexpected splitting for higher surface sensitivity, signaling the presence of a second strontium component. From our quantitative analysis we conclude that during the growth process Sr atoms diffuse away from the substrate and segregate at the surface of the heterostructure, possibly forming strontium oxide.

Treske, Uwe; Heming, Nadine; Knupfer, Martin; Büchner, Bernd; Koitzsch, Andreas, E-mail: a.koitzsch@ifw-dresden.de [Institute for Solid State Research, IFW-Dresden, P.O. Box 270116, DE-01171 Dresden (Germany); Di Gennaro, Emiliano; Scotti di Uccio, Umberto; Miletto Granozio, Fabio [CNR-SPIN and Dipartimento di Fisica, Complesso Universitario di Monte S. Angelo, Via Cintia, 80126 Naples (Italy); Krause, Stefan [Helmholtz-Zentrum Berlin, BESSY, Albert-Einstein-Str. 15, 12489 Berlin (Germany)

2014-01-01T23:59:59.000Z

198

TOF SIMS induced artificial topographical effects on the Y2(Al,Ga)5O12:Tb3+ thin films deposited on Si substrates by the pulsed laser deposition technique  

Science Journals Connector (OSTI)

Abstract The presence of various types of particles on the surface of the pulsed laser deposited (PLD) thin films as well as the differences in the film structure, played an important role to induce artificial topographical effects on Y3(Al,Ga)5O12:Tb3+ PLD thin films deposited on Si substrates measured by time-of-flight secondary ion mass spectroscopy (TOF-SIMS). The two and three-dimensional (2D and 3D) images have been recorded in the positive ion mode. Analysis of the 3D images shows big agglomerated particles on the surface of the Si substrate that appears to be embedded in the substrate and the substrate appears to be on the same level as the particles. This phenomenon is due to the artificial topographic effects which are attributed to the experimental setup of the TOF-SIMS system.

A. Yousif; R.M. Jafer; J.J. Terblans; O.M. Ntwaeaborwa; M.M. Duvenhage; Vinod Kumar; H.C. Swart

2014-01-01T23:59:59.000Z

199

SC e-journals About/FAQ  

Office of Scientific and Technical Information (OSTI)

About/FAQ SC e-journals provides the Office of Science (SC) management and staff electronic access to key peer-reviewed scientific journals. Currently, over 1,600 journals may be accessed via the SC e-journals website. Available titles have been identified by SC Programs as being of specific interest or are made available via Departmental consortium arrangements when possible. The journal collection includes titles of broad interest to the Department as well as subject-specific titles. Journal subscriptions are generally renewed and the SC e-journals collection updated on an annual basis. SC e-journals is developed and maintained by the Office of Scientific and Technical Information. Q. Who can access SC e-journals? A. SC e-journals is an Office of Science service. Copyrighted

200

Critical size for the generation of misfit dislocations and their effects on electronic properties in GaAs nanosheets on Si substrate  

E-Print Network (OSTI)

-Queisser limit6 for the solar-cell efficiency. Recently, NWs of various semi- conductors such as GaAs/AlGaAs,7

Southern California, University of

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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201

Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interface Self-cleaning by Atomic Layer Deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As  

SciTech Connect

The Synchrotron Radiation Photoemission Spectroscopic (SRPES) study was conducted to (a) investigate the surface chemistry of In{sub 0.53}Ga{sub 0.47}As and In{sub 0.52}Al{sub 0.48}As post chemical and thermal treatments, (b) construct band diagram and (c) investigate the interface property of HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As and HfO{sub 2}/In{sub 0.52}Al{sub 0.48}As. Dilute HCl and HF etch remove native oxides on In{sub 0.53}Ga{sub 0.47}As and In{sub 0.52}Al{sub 0.47}As, whereas in-situ vacuum annealing removes surface arsenic pile-up. After the atomic layer deposition of HfO{sub 2}, native oxides were considerably reduced compared to that in as-received epi-layers, strongly suggesting the self-clean mechanism. Valence and conduction band offsets are measured to be 3.37 {+-} 0.1eV, 1.80 {+-} 0.3eV for In{sub 0.53}Ga{sub 0.47}As and 3.00 {+-} 0.1eV, 1.47 {+-} 0.3eV for In{sub 0.52}Al{sub 0.47}As, respectively.

Kobayashi, Masaharu; /SLAC, SSRL; Chen, P.T.; Sun, Y.; Goel, N.; Majhi, P.; Garner, M; Tsai, W.; Pianetta, P.; Nishi, Y.; /SLAC, SSRL

2008-10-31T23:59:59.000Z

202

We describe the characteristics and application of a 265nm AlGaN light-emitting diode (LED) operated at 1 MHz repetition rate, 1.2 ns pulse duration, 1.32 W average power, 2.3 mW peak  

E-Print Network (OSTI)

We describe the characteristics and application of a 265nm AlGaN light-emitting diode (LEDnm bandwidth. The LED enables the fluorescence decay of weakly emitting phenylalanine to be measured and resonance energy transfer from phenylalanine to tyrosine and tryptophan, the convenience of the 265nm LED

Strathclyde, University of

203

Ohmic contacts to n-GaSb  

E-Print Network (OSTI)

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

204

SC Johnson Waxdale Plant | Open Energy Information  

Open Energy Info (EERE)

SC Johnson Waxdale Plant SC Johnson Waxdale Plant Jump to: navigation, search Name SC Johnson Waxdale Plant Facility SC Johnson Waxdale Plant Sector Wind energy Facility Type Community Wind Facility Status In Service Owner SC Johnson Developer SC Johnson Energy Purchaser SC Johnson Location Sturtevant WI Coordinates 42.71313982°, -87.88755655° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.71313982,"lon":-87.88755655,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

205

Lifetime measurements in Sc45  

Science Journals Connector (OSTI)

The lifetimes of levels in Sc45 have been determined by the Doppler-shift-attenuation method with the Ca44(p,?)Sc45 reaction for 11 levels between 1.4 and 3.8 MeV. The energies (keV) of the levels and mean lives (psec) studied in this work are: 1408 (< 0.12); 1800 (0.095); 2092 (0.012); 2151 (0.087); 2303 (0.080); 2352 (0.060); 2531 (0.12); 2590 (0.050); 2778 (0.019); 2895 (0.010); 3714 (0.019). On the basis of E2 transition strengths the spin assignment of 52 has been determined for the 2092-keV state and further restrictions have been made to the range of possible spins for a number of states.[NUCLEAR REACTIONS Ca44(p,?), E=0.86 MeV; Sc45 levels, Ex=1.4-3.8 MeV, measured T12, deduced J.

R. L. Schulte; J. D. King; H. W. Taylor

1974-04-01T23:59:59.000Z

206

SC  

NLE Websites -- All DOE Office Websites (Extended Search)

ROW * Wastesites 1221 Other Set-Asides r:;c::J Areas B Hydric Soils D Three Rivers Landfill N A o o 660 Meters * CompartQ1enLJJ o 330 o 0 o o "0 ro o a: ..c:: O CO Soil...

207

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network (OSTI)

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

208

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

209

SC Systems and Operations (SCSO) Division | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SC Systems SC Systems and Operations (SCSO) Division Business Policy and Operations (BPO) BPO Home Leadership Organization Chart .pdf file (195KB) Business Management and Planning (BMP) Division SC Systems and Operations (SCSO) Division Contact Information Business Policy & Operations U.S. Department of Energy SC-45/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-0192 F: (301) 903-2481 More Information » SC Systems and Operations (SCSO) Division Print Text Size: A A A RSS Feeds FeedbackShare Page The SC Systems and Operations Division (SCSO) provides support for the SC HQ users in the areas of operations and maintenance for SC's network infrastructure, operational applications, cyber security, Science web sites and portals, COOP/ disaster recovery, IT property and asset management, and

210

sc0011885 | netl.doe.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

Membrane-Integrated Sorbent Adsorption Process for Carbon Capture Project No.: DE-SC0011885 TDA's sorbent testing unit (click to enlarge) In this Small Business Innovation...

211

InAs quantum wire induced composition modulation in an In{sub 0.53}Ga{sub 0.37}Al{sub 0.10}As barrier layer grown on an InP substrate  

SciTech Connect

Composition modulations are observed by transmission electron microscopy in In{sub 0.53}Ga{sub 0.37}Al{sub 0.10}As barrier layers that overgrow both single- and multilayer InAs quantum wire structures grown on an InP substrate. Indium-rich (gallium-deficient) regions were observed in the region of the barrier layer lying directly above individual quantum wires, while indium-deficient (gallium-rich) regions were detected in the barrier above the gaps between adjacent underlying quantum wires. The magnitude of such modulation was typically 7% (atomic percent) for both indium and gallium as estimated from the energy dispersive x-ray analysis. The origin of such composition modulations was determined by modeling the chemical potential distribution for indium and gallium on the growth front of the barrier layer at the initial capping stage of the quantum wires with finite element simulations. It is found that the number and positions of the indium-rich regions are determined by the combined effects of strain and surface energy distributions on the barrier material capping the quantum wires. Moreover the estimated magnitudes of the composition modulation for both indium and gallium from the finite element models are in good agreement with the experimental observations. This method provides a simple way to understand the origin of, and to estimate the magnitude of the quantum wire-induced composition modulation in the barrier layer.

Cui, K. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Robinson, B. J. [Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Thompson, D. A. [Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2010-08-15T23:59:59.000Z

212

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

213

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

214

M.Sc.Info-Veranstaltung, 21. Juni 2011 M.Sc. Chemie und Molecular Science  

E-Print Network (OSTI)

M.Sc.Info-Veranstaltung, 21. Juni 2011 M.Sc. Chemie und Molecular Science an der FAU Erlangen-Nürnberg Rainer Fink - Studiendekan Chemie / Mol.Sci. - #12;M.Sc.Info-Veranstaltung, 21. Juni 2011 Grundzüge der Masterstudiengänge Chemie und Molecular Science Qualifikation zu den Masterstudiengängen Modulwahl (Chemie

Stummer, Wolfgang

215

68Ga-1,4,7-Triazacyclononane-1,4,7-triacetic acid-polyethylene glycol-single-chain Cys-tagged vascular endothelial growth  

E-Print Network (OSTI)

68Ga-1,4,7-Triazacyclononane-1,4,7-triacetic acid-polyethylene glycol-single-chain Cys acid-polyethylene glycol- single-chain Cys-tagged vascular endothelial growth factor-121 Abbreviated;tetraazacyclododecane-1,4,7,10-tetraacetic acid (DOTA)-polyethylene glycol (PEG)-scVEGF (64Cu-DOTA-PEG-scVEGF), 99m

Levin, Judith G.

216

M.Sc. PSYCHOLOGY Application Checklist  

E-Print Network (OSTI)

M.Sc. PSYCHOLOGY Application Checklist IMPORTANT NOTES 1. Please submit all Application Materials.Sc. in Psychology must have an Honours degree in Psychology or an undergraduate degree in Psychology (or a related for coursework (Maximum 10 pages). GRE Test Scores: General & Advanced Psychology SUBMIT ­ IF APPLICABLE Official

Northern British Columbia, University of

217

NERSC Training at SC11  

NLE Websites -- All DOE Office Websites (Extended Search)

HPC Archive Solutions Made Simple HPC Archive Solutions Made Simple S13: HPC Archive Solutions Made Simple Sunday, Nov. 13 1:30-5:00 Alan Powers, CSC Jason Hick, NERSC Matt Cary, NASA Advanced Simulation Facility http://sc11.supercomputing.org/schedule/event_detail.php?evid=tut168 ABSTRACT: This tutorial provides an overview of the different hardware technologies and software features used in HPC archival storage systems. The tutorial will touch on the following topics: tape libraries, tape drives, disk cache, HSM, data movers, migration, data recall, storage policies, tape pools, tape compaction, tape striping, archive metrics, data integrity, importing and exporting data, and disaster recovery. Other topics of interest developing an RFP. # How to determine recall and migration policies by profiling existing data files? # What requirements to

218

SC Introduction to Risk Management  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

OF OF SCIENCE Office of Science Risk Management November 4, 2009 Ray Won Office of Project Assessment Office of Science, U.S. Department of Energy Office of Science, U.S. Department of Energy http://www.science.doe.gov/opa/ 2 AGENDA AGENDA Wednesday, November 4, 2009, Building 2714, Oak Ridge 2:15 p.m. Introduction to SC Risk Management 2:25 p.m. Spallation Neutron Source 2:40 p.m. ORNL Risk Management Process 2:55 p.m. National Synchrotron Light Source II 3:10 p.m. Questions 3:30 p.m. End OFFICE OF SCIENCE 3 DOE Organization DOE Organization OFFICE OF SCIENCE Federal Energy Regulatory Commission Office of the Under Secretary for Nuclear Security/ Administrator for National Nuclear Security Administration Thomas P. D'Agostino Chief of Staff *The Deputy Secretary also serves as the Chief Operating Officer.

219

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy  

Science Journals Connector (OSTI)

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular- ... (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as ... back surface field la...

Shulong Lu; Lian Ji; Wei He; Pan Dai; Hui Yang…

2011-10-01T23:59:59.000Z

220

Kohlenstoffhaltige ternäre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternären Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner dürften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

About | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

(HRA) HRA Home About Director Biography Organization Chart .pdf file (26KB) Jobs Human Resources Administration SC Correspondence Control Center (SC CCC) Contact...

222

About | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

acquisition planning. The Office of Laboratory Policy supports the SC Head of Contracting Activity on all matters related to SC procurements. The Office of Laboratory Policy...

223

DOE - Office of Legacy Management -- Savannah River Swamp - SC...  

Office of Legacy Management (LM)

Savannah River Swamp - SC 01 FUSRAP Considered Sites Site: Savannah River Swamp (SC.01 ) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site...

224

Jobs | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Center (SC CCC) Contact Information Human Resources and Administration U.S. Department of Energy SC-48Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301)...

225

SC-CH FACTS Customer Service  

NLE Websites -- All DOE Office Websites (Extended Search)

SC-CH FACTS SC-CH FACTS Customer Service Office of Communications P (630) 252-2110 F (630) 252-9473 Address 9800 South Cass Ave. Argonne, Illinois 60439 Websites Chicago Office www.ch.doe.gov Office of Science http://science.energy.gov/ U.S. Department of Energy http://energy.gov/ CH Factoids Who We Are ... Our Mission The Office of Science - Chicago Office (SC-CH) is a field office of the U.S. Department of Energy (DOE), a Cabinet-level agency with

226

Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics  

SciTech Connect

We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.

Chu, L. K. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Merckling, C.; Dekoster, J.; Caymax, M. [Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium); Alian, A.; Heyns, M. [Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium); Kwo, J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China); Hong, M. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

2011-07-25T23:59:59.000Z

227

sc0006378 | netl.doe.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

A Contaminant Tolerant Solvent Stripping Chemical Hybrid Process for Carbon Capture in Existing Coal-Fired Power Plants Project No.: DE-SC0006378 In this Small Business Innovation...

228

sc0010208 | netl.doe.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

Energy and Capital-Efficient Sorbent-Based CO2 Capture Project No.: DE-SC0010208 InnoSepra's two-bed laboratory testing unit (click to enlarge) In this Small Business Innovation...

229

Al composition dependency of interface phonon in the wurtzite quantum cascade laser  

Science Journals Connector (OSTI)

The interface (IF) phonons of the wurtzite quantum cascade lasers (QCL) are investigated using the transfer-...0.2Ga0.8N/GaN and Al0.15Ga0.85N/GaN QCLs, and two IF modes can be changed into other modes if their w...

Gui-chu Chen ???; Guang-han Fan ???

2010-05-01T23:59:59.000Z

230

Lifetimes of levels in Sc45  

Science Journals Connector (OSTI)

In an attempt to clear up discrepancies between lifetimes measured by the nuclear resonance fluorescence method and by the Doppler shift attenuation method, the results of a further resonance fluorescence experiment are reported for the 720, 1237, 1409, 1662, and 2092 keV levels in Sc45.NUCLEAR REACTIONS Sc45(?, ?), bremsstrahlung 0.8

F. R. Metzger

1975-07-01T23:59:59.000Z

231

IEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array  

E-Print Network (OSTI)

2.3-m laser. Al Ga As Sb cladding layers. Details of the lasers' heterostructure design can be foundIEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array L. Shterengas, G--High-power 2.3- m In(Al)GaAsSb­GaSb type-I double quantum-well diode laser arrays were fabricated

232

Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells.  

E-Print Network (OSTI)

??Thema dieser Arbeit ist die Synthese von Wurtzit M-plane (In,Ga)N(1-100)-Heterostrukturen auf g-LiAlO2(100) mittels plasmaunterstützter Molekularstrahlepitaxie (MBE). Der Einfluß der Wachstumsbedingungen auf die strukturellen, morphologischen, und… (more)

Sun, Yue-Jun

2004-01-01T23:59:59.000Z

233

Connect with SC | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Connect with SC Connect with SC About Organization Budget Field Offices Federal Advisory Committees History Scientific and Technical Information Honors & Awards Jobs Brochures, Logos, & Information Resources Brochures Fact Sheets SC Logos Newsletters Connect with SC Contact Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 Brochures, Logos, & Information Resources Connect with SC Print Text Size: A A A RSS Feeds FeedbackShare Page Laboratories Social Media Ames Laboratory Facebook External link Twitter External link YouTube External link Flickr External link Argonne National Laboratory Facebook External link Twitter External link YouTube External link Flickr External link Brookhaven National Laboratory

234

SC e-journals, Engineering  

Office of Scientific and Technical Information (OSTI)

Engineering Engineering ACM Transactions on Design Automation of Electronic Systems (TODAES) ACM Transactions on Embedded Computing Systems (TECS) ACS Nano Acta Mechanica Acta Mechanica Sinica Adsorption Advanced Engineering Materials Advanced Powder Technology Advanced Robotics Advances in Computational Mathematics Advances In Engineering Software Advances in Materials Science and Engineering - OAJ Advances in Mathematical Engineering - OAJ Advances in Optics and Photonics AlChE Journal Algorithmica American Journal of Engineering and Applied Sciences - OAJ Analog Integrated Circuits and Signal Processing Annals of Nuclear Energy Annual Review of Fluid Mechanics Annual Review of Materials Research Applicable Algebra in Engineering, Communication and Computing Applied Composite Materials

235

SC e-journals, Chemistry  

Office of Scientific and Technical Information (OSTI)

Chemistry Chemistry Accounts of Chemical Research Accreditation and Quality Assurance ACS Chemical Biology ACS Nano Acta Biotheoretica Acta Materialia Acta Neuropathologica Adsorption Advanced Engineering Materials Advances in Physical Chemistry - OAJ AlChE Journal Amino Acids Analyst Analytica Chimica Acta Analytical and Bioanalytical Chemistry Analytical Biochemistry Analytical Chemistry Analytical Sciences - OAJ Angewandte Chemie - International Edition Annual Review of Analytical Chemistry Annual Review of Biochemistry Annual Review of Biophysics Annual Review of Materials Research Annual Review of Physical Chemistry Antimicrobial Agents and Chemotherapy Applied Geochemistry Applied Radiation and Isotopes Applied Surface Science Applied Thermal Engineering Aquatic Geochemistry

236

SC e-journals Help page  

Office of Scientific and Technical Information (OSTI)

Help Help Table of Contents General User Information Access Technical Requirements Desktop Shortcut Archived Journal Issues Open Access Journals Spotlight Spotlight Archive Alerts E-mailing Search Results Need Help With Searching? 'Web of Science' Search General Search Tips General User Information Access: Access to this site is available only through work stations and remote computers connected to the internet via the Office of Science (SC) Lan. Subscription journals accessible via this site are governed by license agreements and may be used by SC Staff whose duty stations are located at DOE Headquarters. SC e-journals 3.0: The Office of Science staff is now provided the latest technology in search and retrieval with the new Federated Search provided with this upgrade. Search results are more likely to meet individual user

237

E-Print Network 3.0 - al sio2 si Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Energy ; Materials Science 8 Suppression of quantum well intermixing in GaAsAlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer Summary: investigation....

238

AgriculturAl Economics http://agrecon.mcgill.ca  

E-Print Network (OSTI)

AgriculturAl Economics http://agrecon.mcgill.ca M.Sc. (Thesis) AnAtomy And cEll Biology www.medicine.mcgill.ca AnimAl sciEncE www.mcgill.ca/animal M.Sc. (Thesis; Applied) Ph.D. (Thesis) Anthropology www.mcgill.ca.A. (Special with research paper) M.A. in Medical Anthropology (Thesis) Ph.D. (Thesis) ArchitEcturE www.mcgill.ca

Barthelat, Francois

239

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

240

Modulhandbuch Master of Science (M.Sc.)  

E-Print Network (OSTI)

to a work load of 30 hours). #12;Modulhandbuch M.Sc. ESE ­ Introduction 4 Struktur des Modulhandbuches 1 ,,Robotics and Computer Vision" untergliedert. Im Personal Profile können (Teil-)Module aus dem Lehrangebot System"(short: ECTS system). These credit points define the student's work load (one point is equivalent

Teschner, Matthias

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

INTRA Programme M.Sc. Science Communication  

E-Print Network (OSTI)

INTRA Programme M.Sc. Science Communication The Objective of this Programme: This programme aims to ensure that all participants, whether they come from natural sciences, humanities or social sciences, are informed about issues arising from developments in science, and are capable of reflecting critically

Humphrys, Mark

242

Clemson University Water System Clemson, SC  

E-Print Network (OSTI)

. The U.S. Environmental Protection Agency (EPA) and the S.C. Department of Health and Environmental the results of our water-quality analyses. Every regulated contaminant that was detected in the water, even of such contamination, footnotes explaining our findings, and a key to units of measurement. Definitions of MCL and MCLG

Duchowski, Andrew T.

243

Clemson University Water System Clemson, SC  

E-Print Network (OSTI)

. The U.S. Environmental Protection Agency (EPA) and the S.C. Department of Health and Environmental-quality analyses. Every regulated contaminant that was detected in the water, even in the most minute traces), the ideal goals for public health, the amount detected, the usual sources of such contamination, footnotes

Duchowski, Andrew T.

244

Fant's Grove Water System Clemson, SC  

E-Print Network (OSTI)

.S. Environmental Protection Agency (EPA) and the S.C. Department of Health and Environmental Control have strict the results of our water-quality analyses. Every regulated contaminant that was detected in the water, even of such contamination, footnotes explaining our findings, and a key to units of measurement. Definitions of MCL and MCLG

Duchowski, Andrew T.

245

Outdoor Laboratory Water System Clemson, SC  

E-Print Network (OSTI)

show about it, and other things you should know about drinking water. The U.S. Environmental Protection Agency (EPA) and the S.C. Department of Health and Environmental Control have strict standards for all the results of our water-quality analyses. Every regulated contaminant that was detected in the water, even

Duchowski, Andrew T.

246

Fant's Grove Water System Clemson, SC  

E-Print Network (OSTI)

.S. Environmental Protection Agency (EPA) and the S.C. Department of Health and Environmental Control have strict-quality analyses. Every regulated contaminant that was detected in the water, even in the most minute traces), the ideal goals for public health, the amount detected, the usual sources of such contamination, footnotes

Duchowski, Andrew T.

247

Outdoor Laboratory Water System Clemson, SC  

E-Print Network (OSTI)

show about it, and other things you should know about drinking water. The U.S. Environmental Protection Agency (EPA) and the S.C. Department of Health and Environmental Control have strict standards for all of our water-quality analyses. Every regulated contaminant that was detected in the water, even

Duchowski, Andrew T.

248

Funding Opportunities | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SC-21Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information Funding...

249

SC In Your State | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SC In Your State SC In Your State Universities Interactive Grants Map SC In Your State University Science Highlights Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 SC In Your State Print Text Size: A A A RSS Feeds FeedbackShare Page The Office of Science directly supports scientists, engineers, and students in all 50 States and the District of Columbia. Each annual report available for download here includes a State-by-State summary of the Office of Science's research investments across the country. Note: Funding totals are represented in thousands. Fiscal Year 2012 .xlsx file (551KB) Fiscal Year 2011 .pdf file (520KB) Fiscal Year 2010 .pdf file (501KB) Fiscal Year 2009 .pdf file (2.0MB) Fiscal Year 2008 .pdf file (758KB)

250

SC FPD 360 Mentoring | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SC FPD 360 Mentoring Print Text Size: A A A FeedbackShare Page FPD 360 Mentoring White Paper .pdf file (72KB) FPD Mentoring Feedback Form .pdf file (1009KB) Last modified:...

251

Department of Business Administration Samir Aziz Alaiwy Al-Abbadi  

E-Print Network (OSTI)

Department of Business Administration Samir Aziz Alaiwy Al-Abbadi P.O. Box:1 Philadelphia. Samir Aziz Alaiwy Al-Abbadi Date of Birth : 1949 Academic Qualification · B.Sc Business Administration - 1975 ­ Al- Mustansiryah University ­ Iraq · M.B.A Business Administration (Production / Operations

252

Studiengangsbericht fr den Studiengang M.Sc. Chemie  

E-Print Network (OSTI)

Studiengangsbericht für den Studiengang M.Sc. Chemie Stand: März 2013 v 5.5 #12;M.Sc. Chemie Stand...........25 #12;M.Sc. Chemie Stand: März 2013 2 TEIL A: Konzeption des Studiengangs Anmerkung: Dieser Teil ist.1.2 Eckdaten zum Studiengang Bezeichnung des Studiengangs: Chemie (Chemistry) Hochschulgrad: M

Reyle, Uwe

253

68Ga-N,N'-bis[2-Hydroxy-5-(carboxyethyl)benzyl] ethylenediamine-N,N'-diacetic acid-polyethylene glycol-single-  

E-Print Network (OSTI)

68Ga-N,N'-bis[2-Hydroxy-5-(carboxyethyl)benzyl] ethylenediamine-N,N'-diacetic acid-polyethylene-N,N'-bis[2-Hydroxy-5-(carboxyethyl)benzyl]ethylenediamine-N,N'- diacetic-polyethylene glycol-single-chain Cys,4,7,10- tetraazacyclododecane-1,4,7,10-tetraacetic acid (DOTA)-polyethylene glycol (PEG)-scVEGF (64Cu-DOTA-PEG-scVEGF), 99m

Levin, Judith G.

254

Ca40(p, ?)Sc41 Reaction  

Science Journals Connector (OSTI)

Proton capture by Ca40 has been studied by means of observations of both the prompt gamma rays from resonance states in the compound nucleus and the delayed positrons from the decay of the ground state. Targets of CaO were prepared by the electrodeposition of Ca onto a Pt backing followed by the oxidation of the Ca and the purging of impurities by heat. These targets were bombarded by protons from a 2-Mv Van de Graaff accelerator, producing the reaction Ca40(p, ?)Sc41. The gamma rays from this reaction were observed with the use of a 3-in. diam by 3-in. NaI(Tl) crystal and a 256-channel pulse-height analyzer. Positrons from the decay of Sc41 were detected with the use of a thin plastic phosphor, 1.5 in. diam by 0.012 in. thick. Two resonances in the reaction were observed at bombarding energies of 650±5 kev and 1850±10 kev. Two other possible resonances were observed at 1550±15 kev and 1630±15 kev. The 650-kev resonance corresponds to an excited state in Sc41 at 1.723±0.011 Mev, has an integrated cross section of 0.02 ev barn (factor of 2 uncertainty either way), has a width of less than 5 kev, and involves a gamma ray whose energy was measured to be 1.71±0.03 Mev. The 1850-kev resonance corresponds to an excited state in Sc41 at 2.883±0.014 Mev, has an integrated cross section of 0.3 ev barn (factor of 2 uncertainty either way), has a width of less than 10 kev, and involves a gamma ray whose energy was measured to be 2.89±0.02 Mev.

J. W. Butler

1961-08-01T23:59:59.000Z

255

E-Print Network 3.0 - aluminium incorporating al-hf Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

Solar Cells May See Off Silicon Summary: which involves growing alternate layers of gallium arsenide (GaAs) and aluminium arsenide (Al... be incorporated into. "If you can...

256

The development of integrated chemical microsensors in GaAs  

SciTech Connect

Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

1999-11-01T23:59:59.000Z

257

Vacancy-Induced 2×2 Reconstruction of the Ga(111) Surface of GaAs  

Science Journals Connector (OSTI)

Vacancy formation on the GaAs(111) surface is calculated to be strongly exothermic in character. The creation of one vacancy in each 2×2 cell allows the remaining Ga surface atoms to have a large inward relaxation, resulting in a 2.3-eV reduction in energy. It also transforms the polar (111) surface into a nonpolar (110)-like surface. The calculations provide strong support for the vacancy model of Tong et al., which is determined from analysis of low-energy-electron-diffraction data.

D. J. Chadi

1984-05-21T23:59:59.000Z

258

Office of Science, SC-3, Qualifying Official Training  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Science, SC-3 Science, SC-3 Qualifying Official (QO) Training Qualifying Official (QO) Training August 2009 August 2009 1 Updated 8/4/09, 1:20pm, CLS Purpose As an SC-3 Qualifying Official (QO) you are Q y g (Q ) y charged with assuring that the technical personnel whom you are evaluating have met and can apply their competencies of their assigned Technical their competencies of their assigned Technical Qualification Program (TQP) qualification standards. 2 Authorization As such each SC-3 Qualifying Official (QO) has As such, each SC-3 Qualifying Official (QO) has received authorization from SC-3 to sign TQP documents or qualification cards for designated i competencies or standards. Office/Facility Specific Standards OFSs y "Site-specific" Functional Area Qualification Standards FAQS "DOE-wide"

259

Spectroscopy of {sup 52,53}Sc  

SciTech Connect

Excited states of neutron-rich odd-A and odd-odd Sc isotopes, populated in deep inelastic multinucleon transfer reactions, induced by a {sup 238}U beam on a thin {sup 48}Ca target, have been identified. A strong feeding of both yrast and nonyrast states in such a reaction is illustrated using a combination of a large efficiency spectrometer and a {gamma} detector array. The structure of the populated states is interpreted in terms of the role of the valence proton and neutrons and compared to shell model calculations in the full pf shell.

Bhattacharyya, S.; Rejmund, M.; Navin, A.; Gelin, M.; Mittig, W.; Mukherjee, G.; Rejmund, F.; Roussel-Chomaz, P. [GANIL, CEA/DSM-CNRS/IN2P3, Bd Henri Becquerel, BP 55027, F-14076 Caen Cedex 5 (France); Caurier, E.; Nowacki, F.; Rousseau, M. [IPHC, UMR7178, IN2P3-CNRS et Universite Louis Pasteur, BP28, F-67037 Strasbourg (France); Poves, A. [Departamento de Fisica Teorica and IFT/CSIC, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Chapman, R.; O'Donnell, D.; Hodsdon, A.; Liang, X.; Spohr, K.-M. [School of Engineering and Science, University of the West of Scotland, Paisley PA1 2BE, Scotland (United Kingdom); Theisen, Ch. [CEA-Saclay DSM/DAPNIA/SPhN, F-91191 Gif/Yvette Cedex (France)

2009-01-15T23:59:59.000Z

260

Using Marginal Lands for Biofuels | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Using Marginal Lands for Biofuels Using Marginal Lands for Biofuels Biological and Environmental Research (BER) BER Home About Research Facilities Science Highlights Searchable Archive of BER Highlights External link Benefits of BER Funding Opportunities Biological & Environmental Research Advisory Committee (BERAC) News & Resources Contact Information Biological and Environmental Research U.S. Department of Energy SC-23/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3251 F: (301) 903-5051 E: sc.ber@science.doe.gov More Information » January 2013 Using Marginal Lands for Biofuels Assessment shows Midwest could support biomass production while benefiting climate. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo Image courtesy of Macmillan Publishers Ltd: Gelfand, I., et al.

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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261

Control Systems Design, SC4026 SC4026 Fall 2009, dr. A. Abate, DCSC, TU Delft  

E-Print Network (OSTI)

and the steam engine. The centrifugal governor on the left consists of a set of flyballs that spread apart as the speed of the engine increases. The steam engine on the right uses a centrifugal governor (above engineering: a few examples SC4026 Fall 2009, dr. A. Abate, DCSC, TU Delft 1 #12;The concept of feedback

Abate, Alessandro

262

About | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

management and oversight of laboratory operations. The Office: Serves as the principle advisor to SC leadership and provides guidance to the Integrated Support Center staff to...

263

Sustainability | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Page Related Links SC 2014 Composite Sustainability Plan .pdf file (638KB) 2013 DOE Strategic Sustainability Performance Plan (PDF) 2012 OMB SustainabilityEnergy...

264

External Links | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

External Links Budget Budget Home About Budget by Program GAO Audit Reports External Links Contact Information Budget U.S. Department of Energy SC-41Germantown Building 1000...

265

Current Awards | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Information Experimental Program to Stimulate Competitive Research U.S. Department of Energy SC-22Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301)...

266

DSB-SC Phase Demodulation -Application for Vibration Measurement  

Science Journals Connector (OSTI)

A heterodyne interferometry with DSB-SC performance is presented to measure small vibration signal. The vibration induced phase is demodulated by self-mixing without a local...

Teng, Hui-Kang; Lang, Kuo-Chen

267

About | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Information Technology and Services U.S. Department of Energy SC-45Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-0192 F: (301)...

268

BER Budget | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Contact Information Biological and Environmental Research U.S. Department of Energy SC-23Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3251...

269

Workshops | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Reports Workshops Nuclear Physics Related Brochures and Videos Contact Information Nuclear Physics U.S. Department of Energy SC-26Germantown Building 1000 Independence...

270

Agenda | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Reports Workshops Nuclear Physics Related Brochures and Videos Contact Information Nuclear Physics U.S. Department of Energy SC-26Germantown Building 1000 Independence...

271

Nidc Orgchart | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Nuclear Science Advisory Committee (NSAC) News & Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26Germantown Building 1000 Independence...

272

Full Program | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Reports Workshops Nuclear Physics Related Brochures and Videos Contact Information Nuclear Physics U.S. Department of Energy SC-26Germantown Building 1000 Independence...

273

Reports | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Reports Workshops Nuclear Physics Related Brochures and Videos Contact Information Nuclear Physics U.S. Department of Energy SC-26Germantown Building 1000 Independence...

274

Research | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Nuclear Science Advisory Committee (NSAC) News & Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26Germantown Building 1000 Independence...

275

Funding Opportunities | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Nuclear Science Advisory Committee (NSAC) News & Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26Germantown Building 1000 Independence...

276

Archives | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Visitors Contact Information Deputy Director for Science Programs U.S. Department of Energy SC-2Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202)...

277

About | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Laboratories Infrastructure (SLI) Program Safeguards & Security (S&S) Program Sustainability Contact Information Operations Program Management U.S. Department of Energy SC-33...

278

SLI Budget | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Laboratories Infrastructure (SLI) Program Safeguards & Security (S&S) Program Sustainability Contact Information Operations Program Management U.S. Department of Energy SC-33...

279

Jobs | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Laboratories Infrastructure (SLI) Program Safeguards & Security (S&S) Program Sustainability Contact Information Operations Program Management U.S. Department of Energy SC-33...

280

Jobs | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Jobs Functions Contact Information Information Technology and Services U.S. Department of Energy SC-45Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301)...

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Resonant Raman scattering in an InAs/GaAs monolayer structure  

E-Print Network (OSTI)

), embedded in bulklike GaAs with two Al- GaAs cladding layers forming a waveguide. The InAs- mono- layer system used. Raman spectra were excited with a Ti-Sapphire laser, tuned from 1.41 eV to 1.435 e

Nabben, Reinhard

282

Sc41-Ca41 Coulomb displacement energy  

Science Journals Connector (OSTI)

The Coulomb displacement energy in the Sc41-Ca41 system is calculated using three different methods. All three methods make use of Hartree-Fock densities at some stage. The Hartree-Fock calculations are performed with the SIII and SIV Skyrme-type forces. The results from all three methods are in agreement with each other. The resulting Coulomb displacement energy is less than 4 or less than 6 percent smaller than the experimental one depending on the force employed. Higher order Coulomb corrections are evaluated and it is found that they can be very large (of the order of 1 MeV) and depend on the approach taken. The use of the analog state defined with the T- operator as a representation of the physical analog leads to an overestimate of the Coulomb displacement energy by more than 0.5 MeV. The inclusion of Coulomb distortion terms restores the result by reducing the Coulomb displacement energy. One can also conclude from the present study that the mechanism of treating higher order Coulomb corrections by taking the giant isovector monopole as the only important intermediate state is in fact the correct one and gives precise results.NUCLEAR STRUCTURE Coulomb displacement energy, Sc41-Ca41 system.

N. Auerbach; V. Bernard; Nguyen Van Giai

1980-02-01T23:59:59.000Z

283

Excited state absorption of V/sup 2 +/ and Cr/sup 3 +/ ions in crystal hosts. [V/sup 2 +/ in KMgF/sub 3/; Cr/sup 3 +/ in Na/sub 3/Ga/sub 2/Li/sub 3/F/sub 12/ and BeAl/sub 2/O/sub 4/  

SciTech Connect

We have measured the excited state absorption spectra of KMgF/sub 3/:V/sup 2 +/, Na/sub 3/Ga/sub 2/Li/sub 3/F/sub 12/:Cr/sup 3 +/, and BeAl/sub 2/O/sub 4/:Cr/sup 3 +/. The /sup 4/T/sub 2/ ..-->.. /sup 4/T/sub 1/a, /sup 4/T/sub 1/b transitions were observed for the first two systems, while the /sup 2/E, /sup 2/T/sub 1/ ..-->.. /sup 2/T/sub 2/ transitions were seen for BeAl/sub 2/O/sub 4/:Cr/sup 3 +/. All excited state absorptions, except the /sup 4/T/sub 2/ ..-->.. /sup 4/T/sub 1/a transition, can be understood on the basis of simple crystal field theory. The /sup 4/T/sub 2/ ..-->.. /sup 4/T/sub 1/a transition is found to be profoundly modified by the Jahn-Teller effect, such that it is broader and at higher energy than otherwise expected. This excited state absorption is observed to overlap the emission spectrum of KMgF/sub 3/:V/sup 2 +/, and thereby substantially reduce the effective stimulated emission cross-section.

Payne, S.A.; Chase, L.L.

1987-01-01T23:59:59.000Z

284

Study of Sc41 Levels by the Ca40(p,?)Sc41 Reaction  

Science Journals Connector (OSTI)

The level structure of Sc41 produced in the Ca40(p,?)Sc41 reaction has been studied by measuring the positron activity [Emax(?+)=5.5 MeV, ?12=0.6 sec] of the product nucleus. The measurements covered the range 0.6?Ep?5.2 MeV with a resolution width of about 5 keV. Forty-six resonances in the yield function were identified with states of Sc41. Absolute yields were also measured for each resonance with a ? detector of calibrated efficiency. Since all excited states of Sc41 are proton-unstable, these yields were attributed to transitions from the capture levels directly to the ground state. On this basis, and by assuming ??Sc41 is 72-, these results eliminated from consideration assignments of J?=12+,12-, and 32+ for the radiating states. For 16 of the most strongly excited levels, specific evidence with respect to possible values of J? was obtained by measuring the angular distribution of the ? radiation emitted in transitions to the ground state. For ten additional states, earlier studies of proton elastic scattering furnished values of the orbital angular momentum lp of the captured protons. These data permitted specific J? assignments in 14 favorable cases, and restricted assignments to two values of J and either parity in ten cases. Eleven transitions are found to occur by means of either pure E2 or mixed M1 and E2 radiation. The combined strength of these transitions exhausts 6-8% of the E2 sum-rule limit. The present status of information on energies and values of J? of the states of Sc41 occurring at excitation energies up to 6.2 MeV is summarized.

D. H. Youngblood; B. H. Wildenthal; C. M. Class

1968-05-20T23:59:59.000Z

285

Economics Engineering (M.Sc.) Summer Term 2014  

E-Print Network (OSTI)

Economics Engineering (M.Sc.) Summer Term 2014 Short version Date: 26.02.2014 Department. Contents 1 Structure of the Master Programme in Economics Engineering (M.Sc.) 6 2 Key Skills 7 3 Module of Economics and Management KIT - University of the State of Baden-Wuerttemberg and National Research Center

Stein, Oliver

286

Economics Engineering (M.Sc.) Summer Term 2014  

E-Print Network (OSTI)

Economics Engineering (M.Sc.) Summer Term 2014 Long version Date: 26.02.2014 Department. Contents 1 Structure of the Master Programme in Economics Engineering (M.Sc.) 13 2 Key Skills 14 3 Module of Economics and Management KIT - University of the State of Baden-Wuerttemberg and National Research Center

Stein, Oliver

287

Economics Engineering (B.Sc.) Summer Term 2014  

E-Print Network (OSTI)

Economics Engineering (B.Sc.) Summer Term 2014 Short version Date: 26.02.2014 Department of Economics and Business Engineering KIT - University of the State of Baden-Wuerttemberg and National Research version of the handbook. Contents 1 Structure of the Bachelor Programme in Economics Engineering (B.Sc.) 5

Stein, Oliver

288

Karen Talamini | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Karen Talamini Karen Talamini Deputy Director for Science Programs Deputy Director Home Mission & Functions Deputy Director Biography Organization Staff Presentations & Testimony Federal Advisory Committees Committees of Visitors Contact Information Deputy Director for Science Programs U.S. Department of Energy SC-2/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 F: (202) 586-4120 E: sc.science@science.doe.gov U.S. Department of Energy SC-2/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-5316 F: (301) 903-7780 E: sc.science@science.doe.gov Staff Karen Talamini Print Text Size: A A A RSS Feeds FeedbackShare Page Program Analyst Office of the Deputy Director for Science Programs SC-2/Germantown Building, Room F-242

289

Kevin Shaw | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Kevin Shaw Kevin Shaw Deputy Director for Science Programs Deputy Director Home Mission & Functions Deputy Director Biography Organization Staff Presentations & Testimony Federal Advisory Committees Committees of Visitors Contact Information Deputy Director for Science Programs U.S. Department of Energy SC-2/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 F: (202) 586-4120 E: sc.science@science.doe.gov U.S. Department of Energy SC-2/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-5316 F: (301) 903-7780 E: sc.science@science.doe.gov Staff Kevin Shaw Print Text Size: A A A RSS Feeds FeedbackShare Page Program Analyst Office of the Deputy Director for Science Programs SC-2/Forrestal Building, Room 3H-051 U.S. Department of Energy

290

Jobs | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Jobs Jobs About Organization Budget Field Offices Federal Advisory Committees History Scientific and Technical Information Honors & Awards Jobs Brochures, Logos, & Information Resources Contact Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 Jobs Print Text Size: A A A Subscribe FeedbackShare Page Below is a list of currently open federal employment opportunities* in the Office of Science. Prospective applicants should follow the links to the formal position announcements on USAJOBS.gov External link for more information. SC Science Program Positions SC Field Operations Positions SC Resource Management Positions * Currently open positions: 2 SC Science Programs Positions See below for position listings in the six core SC science program offices.

291

Completed Projects | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Completed Projects Completed Projects Project Assessment (OPA) OPA Home About Project Management SC Projects Review Dates (updated November 2013) Project Construction Photos Completed Projects Current Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov Project Construction Photos Completed Projects Print Text Size: A A A RSS Feeds FeedbackShare Page Photos of completed SC projects Advanced Photon Source External link Building 51 and Bevatron D&D .pdf file (1.1MB) LHC ATLAS .pdf file (322KB) LHC CMS .pdf file (166KB) Linac Coherent Light Source .pdf file (4.6MB)

292

Lauren Smith | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Lauren Smith Lauren Smith Deputy Director for Science Programs Deputy Director Home Mission & Functions Deputy Director Biography Organization Staff Presentations & Testimony Federal Advisory Committees Committees of Visitors Contact Information Deputy Director for Science Programs U.S. Department of Energy SC-2/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 F: (202) 586-4120 E: sc.science@science.doe.gov U.S. Department of Energy SC-2/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-5316 F: (301) 903-7780 E: sc.science@science.doe.gov Staff Lauren Smith Print Text Size: A A A RSS Feeds FeedbackShare Page Program Support Specialist Office of the Deputy Director for Science Programs SC-2/Germantown Building, Room H-208

293

About | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

About About Project Assessment (OPA) OPA Home About Director Staff & Responsibilities Location Project Management SC Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov About Print Text Size: A A A RSS Feeds FeedbackShare Page Click to enlarge photo. Enlarge Photo The Spallation Neutron Source and the Center for Nanophase Material Science at the Oak Ridge National Laboratory. The Office of Project Assessment provides independent advice to the Director of the Office of Science (SC) relating to those activities essential to constructing and operating major research facilities. In

294

Ray Irwin | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ray Irwin Ray Irwin Deputy Director for Science Programs Deputy Director Home Mission & Functions Deputy Director Biography Organization Staff Presentations & Testimony Federal Advisory Committees Committees of Visitors Contact Information Deputy Director for Science Programs U.S. Department of Energy SC-2/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 F: (202) 586-4120 E: sc.science@science.doe.gov U.S. Department of Energy SC-2/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-5316 F: (301) 903-7780 E: sc.science@science.doe.gov Staff Ray Irwin Print Text Size: A A A RSS Feeds FeedbackShare Page Ray Irwin Ray Irwin Administrative Support Specialist Office of the Deputy Director for Science Programs SC-2/Forrestal, Room 7B-078

295

About | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

About About Ames Site Office (AMSO) AMSO Home About Organization Chart .pdf file (113KB) Federal Stewardship Internal Site Office Operations Jobs Current Projects Contract Management Environment, Safety and Health (ES&H) Resources Contact Information Ames Site Office U.S. Department of Energy 9800 S. Cass Avenue Argonne, IL 60439 P: (630) 252-6167 F: (630) 252-2855 About Print Text Size: A A A RSS Feeds FeedbackShare Page AMSO is a SC-line management organization that reports to the Deputy Director for Field Operations for SC (SC-3). Within SC, the SC-Headquarters (HQ) organization establishes policy and direction while the field organizations are responsible for implementing that policy and direction. The Site Offices are responsible and accountable for the management of an

296

Project Management | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Management Management Project Assessment (OPA) OPA Home About Project Management Processes and Procedures Cost & Contingency EDIA Escalation Rates Earned Value Management System (EVMS) Certifications Awards Lessons Learned Tools & Resources SC Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov Project Management Print Text Size: A A A RSS Feeds FeedbackShare Page Contains resources and information that may be useful for Federal Project Directors, HQ Program Managers, senior SC management, or contractor project management personnel. Specific information includes:

297

Ongoing Projects | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Current Projects Current Projects Project Assessment (OPA) OPA Home About Project Management SC Projects Review Dates (updated November 2013) Project Construction Photos Completed Projects Current Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov Project Construction Photos Current Projects Print Text Size: A A A RSS Feeds FeedbackShare Page Photos of current SC Projects 12 GeV CEBAF Upgrade .pdf file (3.2MB) Daya Bay .pdf file (1.0MB) National Spherical Torus Experiment (NSTX) .pdf file (841KB) National Synchrotron Light Source II (NSLS II) .pdf file (6.4MB)

298

Fact Sheets | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Fact Sheets Fact Sheets About Organization Budget Field Offices Federal Advisory Committees History Scientific and Technical Information Honors & Awards Jobs Brochures, Logos, & Information Resources Brochures Fact Sheets SC Logos Newsletters Connect with SC Contact Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 Brochures, Logos, & Information Resources Fact Sheets Print Text Size: A A A RSS Feeds FeedbackShare Page SC Overview Fact Sheet Office of Science (SC) The DOE Office of Science is the Nation's largest supporter of basic research in the physical sciences. Download SC overview fact sheet .pdf file (10.8MB) EFRC Overview Fact Sheet Energy Frontier Research Centers (EFRCs) program The Department of Energy's Office of Science supports 46 Energy Frontier

299

Microsoft Word - SC-CH FTCP TQP WFSA Template-2013-final--10...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

SC-CH in support of PNSO oversight of RPL; SC-CH is providing one fire protection engineer, but because of limited technical certifications, SC-CH is acquiring the services of...

300

Darlington AL O'Reillys AL  

E-Print Network (OSTI)

CanungraCk Darlington AL Darlington Coom era R O'Reillys AL Beechmont AL Binna Burra AL BackCk Tyungun AL Numinbah Valley AL NerangR Natural Bridge Numinbah AL Little Nerang Dam AL Albert R Bromfleet AL Benobble AL Wolffdene AL Luscombe AL Wongawallan AL Mt Tamborine Canungra Pimpama R Laheys Lookout

Greenslade, Diana

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Ralisation et caractrisation d'un transistor effet de champ JFET au GaAs en vue de son intgration avec une photodiode  

E-Print Network (OSTI)

intégration avec une photodiode M. T. Belaroussi, F. Therez et R. Alcubilla (*) Laboratoire d'Automatique et d étendus à la fabrication du circuit intégré GaAlAs-GaAs associant une photodiode à un TEC. Abstract. 2014AlAs-GaAs monolithic integration of a photodiode and FET. Revue Phys. Appl. 22 (1987) 77-82 JANVIER 1987

Paris-Sud XI, Université de

302

FY 2006 SC Laboratory Performance Report Cards | U.S. DOE Office of Science  

NLE Websites -- All DOE Office Websites (Extended Search)

6 SC Laboratory Performance Report Cards 6 SC Laboratory Performance Report Cards Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

303

Nonlinear absorption edge properties of 1.3-m GaInNAs saturable R. Grange,a  

E-Print Network (OSTI)

-starting and stable operation of the laser at tens of GHz repetition rates.4 So far, InGaAsP,5 InGaAs,6,7 and AlNonlinear absorption edge properties of 1.3- m GaInNAs saturable absorbers R. Grange,a A. Rutz, V above the PL peak and R scales with the linear absorption even in the bandtail. The product R

Keller, Ursula

304

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

NLE Websites -- All DOE Office Websites (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

305

Brochures | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Brochures Brochures About Organization Budget Field Offices Federal Advisory Committees History Scientific and Technical Information Honors & Awards Jobs Brochures, Logos, & Information Resources Brochures Fact Sheets SC Logos Newsletters Connect with SC Contact Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 Brochures, Logos, & Information Resources Brochures Print Text Size: A A A RSS Feeds FeedbackShare Page 2014 Office of Science Brochure Front Cover Back Cover SC Brochure Front Cover SC Brochure Back Cover Download Front Cover Image: Low-res .JPG .jpg file (287KB) | High-res .JPG .jpg file (1.4MB) Download Back Cover Image: Low-res .JPG .jpg file (472KB) | High-res .JPG .jpg file (2.1MB)

306

Staff | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Staff Staff Deputy Director for Science Programs Deputy Director Home Mission & Functions Deputy Director Biography Organization Staff Presentations & Testimony Federal Advisory Committees Committees of Visitors Contact Information Deputy Director for Science Programs U.S. Department of Energy SC-2/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 F: (202) 586-4120 E: sc.science@science.doe.gov U.S. Department of Energy SC-2/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-5316 F: (301) 903-7780 E: sc.science@science.doe.gov Staff Print Text Size: A A A RSS Feeds FeedbackShare Page Deputy Director: Patricia M. Dehmer Deputy Director Administrative Staff: Lauren Smith Program Support Specialist Ray Irwin

307

Lessons Learned | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Lessons Learned Lessons Learned Project Assessment (OPA) OPA Home About Project Management Processes and Procedures Cost & Contingency EDIA Escalation Rates Earned Value Management System (EVMS) Certifications Awards Lessons Learned Tools & Resources SC Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov Project Management Lessons Learned Print Text Size: A A A RSS Feeds FeedbackShare Page NSLS II Magnet Procurement .pdf file (1.3MB) October 2013 OLCF-3 Lessons Learned Report .pdf file (39KB) September 2013 ISB Leasons Learned Report .pdf file (196KB) July 2013

308

Awards | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Management » Management » Awards Project Assessment (OPA) OPA Home About Project Management Processes and Procedures Cost & Contingency EDIA Escalation Rates Earned Value Management System (EVMS) Certifications Awards Lessons Learned Tools & Resources SC Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov Project Management Awards Print Text Size: A A A RSS Feeds FeedbackShare Page 2012 Secretary's Award of Excellence: Building 51 and Bevatron Demolition Project at Lawrence Berkeley National Laboratory The Bevatron Demolition Project successfully accomplished DOE's

309

Award Search | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Award Search Award Search Funding Opportunities Grants & Contracts Support Award Search Find Funding Early Career Research Program Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 Award Search Print Text Size: A A A RSS Feeds FeedbackShare Page DOE Office of Science Award Search Website The award search returns lists of (1) grants, (2) cooperative agreements, and (3) interagency awards currently funded by the DOE Office of Science. An award will appear in the search within the office or division that manages it: Select Organization All Organizations SC-21.1, ASCR Computational Science Research and ... SC-22, Office of Basic Energy Sciences SC-22.1, Chemical Sciences, Geosciences and Biosciences ... SC-22.2, BES Materials Sciences and

310

Escalation Rates | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Escalation Rates Project Assessment (OPA) OPA Home About Project Management Processes and Procedures Cost & Contingency EDIA Escalation Rates Earned Value Management System (EVMS) Certifications Awards Lessons Learned Tools & Resources SC Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov Project Management Escalation Rates Print Text Size: A A A RSS Feeds FeedbackShare Page Cumming Corporation Escalation Study .ppt file (2.8MB) FY 2011 Field Budget Call: Escalation Rates .pdf file (69KB) Industry Specific Escalation, January 2009 .pdf file (56KB)

311

2008 Archive | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Presentations & Testimony » 2008 Archive Presentations & Testimony » 2008 Archive Deputy Director for Science Programs Deputy Director Home Mission & Functions Deputy Director Biography Organization Staff Presentations & Testimony Federal Advisory Committees Committees of Visitors Contact Information Deputy Director for Science Programs U.S. Department of Energy SC-2/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 F: (202) 586-4120 E: sc.science@science.doe.gov U.S. Department of Energy SC-2/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-5316 F: (301) 903-7780 E: sc.science@science.doe.gov Presentations & Testimony 2008 Archive Print Text Size: A A A RSS Feeds FeedbackShare Page 11/19/08 - "Research Opportunities in the DOE Office of Science," .ppt file

312

Director | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Director Director Project Assessment (OPA) OPA Home About Director Staff & Responsibilities Location Project Management SC Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov About Director Print Text Size: A A A RSS Feeds FeedbackShare Page Click to enlarge photo. Enlarge Photo Daniel R. Lehman Daniel R. Lehman has served as Director of the Office of Project Assessment since June 1991. The majority of Mr. Lehman's over 30 years of Federal Service has been served within the Office of Science (formerly Energy Research). Mr. Lehman's key responsibilities include:

313

About | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

About About Grants & Contracts Support Grants & Contracts Support Home About Organization Chart .pdf file (12KB) Jobs Grants/Contracts Differences Federal Agency Proposals Funding Opportunity Announcements (FOAs) DOE National Laboratory Announcements Grants Process Grants Policy and Guidance FAQs Resources Contract Information Contact Information Grants & Contracts Support U.S. Department of Energy SC-43/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: 301-903-2859 E: sc.grantsandcontracts@science.doe.gov About Print Text Size: A A A RSS Feeds FeedbackShare Page The Office of Grants and Contracts Support (SC-43) primarily supports financial assistance activities as exhibited in the following chart. Grants & Contracts Pie Chart SC-43 works to provide stewardship, guidance, tools and advice needed to

314

Staff | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

About » Staff About » Staff Nuclear Physics (NP) NP Home About Staff Organization Chart .pdf file (32KB) NP Budget NP Committees of Visitors Directions Jobs Labs & Universities Nuclear Physics Related Brochures Research Facilities Science Highlights Benefits of NP Funding Opportunities Nuclear Science Advisory Committee (NSAC) News & Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E: sc.np@science.doe.gov More Information » About Staff Print Text Size: A A A RSS Feeds FeedbackShare Page Contact Info Regular Mail: Express Mail: Office of Nuclear Physics, Office of Nuclear Physics, SC-26 SC-26/Germantown Building U.S. Department of Energy U.S. Department of Energy 19901 Germantown Road

315

ALCF contributes papers, posters, and more to SC14 | Argonne...  

NLE Websites -- All DOE Office Websites (Extended Search)

a DOE Office of Science User Facility, will have a strong presence at the high-performance computing community's premier annual event, Nov. 16-21 in New Orleans. SC is the...

316

SC COLLABORATOR: A SERVICE ORIENTED FRAMEWORK FOR CONSTRUCTION SUPPLY CHAIN  

E-Print Network (OSTI)

, service oriented architecture (SOA) with open source technologies is a desirable computing modelSC COLLABORATOR: A SERVICE ORIENTED FRAMEWORK FOR CONSTRUCTION SUPPLY CHAIN COLLABORATION for construction supply chain collaboration and management, through a prototype service oriented system framework

Stanford University

317

Archives | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ave., SW Washington, DC 20585 P: (301) 903-3081 F: (301) 903-6594 E: sc.bes@science.doe.gov More Information News & Resources Archives Print Text Size: A A A FeedbackShare...

318

FY 2011 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

1 Budget Budget Home About Budget by Program GAO Audit Reports External Links Contact Information Budget U.S. Department of Energy SC-41Germantown Building 1000 Independence Ave.,...

319

FY 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

7 Budget Budget Home About Budget by Program GAO Audit Reports External Links Contact Information Budget U.S. Department of Energy SC-41Germantown Building 1000 Independence Ave.,...

320

FY 1987 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

7 Budget Budget Home About Budget by Program GAO Audit Reports External Links Contact Information Budget U.S. Department of Energy SC-41Germantown Building 1000 Independence Ave.,...

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Reports | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

F: (301) 903-2597 E: sc.hep@science.doe.gov More Information News & Resources Reports Print Text Size: A A A FeedbackShare Page Computing Meeting Report A topical panel...

322

FY 1989 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

9 Budget Budget Home About Budget by Program GAO Audit Reports External Links Contact Information Budget U.S. Department of Energy SC-41Germantown Building 1000 Independence Ave.,...

323

FY 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

8 Budget Budget Home About Budget by Program GAO Audit Reports External Links Contact Information Budget U.S. Department of Energy SC-41Germantown Building 1000 Independence Ave.,...

324

FY 1993 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

3 Budget Budget Home About Budget by Program GAO Audit Reports External Links Contact Information Budget U.S. Department of Energy SC-41Germantown Building 1000 Independence Ave.,...

325

Staff | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Administrative Issues (202) 586-5447 Chadsey Kittock Procurement Analyst SC Head of Contracting Activity & M&O Contracting Issues (202) 586-4047 David E. Koegel Program Analyst...

326

SLI Budget | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Budget FES Budget HEP Budget NP Budget WDTS Budget SLI Budget S&S Budget SCPD Budget GAO Audit Reports External Links Contact Information Budget U.S. Department of Energy SC-41...

327

EV Community Readiness projects: Center for Transportation and...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

EV Community Readiness projects: Center for Transportation and the Environment (GA, AL, SC); Centralina Council of Governments (NC) EV Community Readiness projects: Center for...

328

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

329

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

330

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name: GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and...

331

ALS@20  

NLE Websites -- All DOE Office Websites (Extended Search)

feed-image feed-image Digg: ALSBerkeleyLab Facebook Page: 208064938929 Flickr: advancedlightsource Twitter: ALSBerkeleyLab YouTube: AdvancedLightSource Home About the ALS ALS@20 ALS@20 ALS@20 Kick-Off Celebration Print On Friday, January 11, the Advanced Light Source celebrated the beginning of its 20th anniversary year with a brunch attended by more than 150 current and past staff members. After introductory remarks describing the trials and tribulations encountered during the construction of the ALS from former Director Jay Marx, current ALS Scientific Director Steve Kevan and Director Roger Falcone talked about the progress of the facility over the years. Attendees were then able to view more than 500 historical photos of the ALS and its staff displayed around the room.

332

MOCVD und Charakterisierung von GaN-Dünnschichten und -Nanostrukturen unter Verwendung eines Single-Molecule-Precursors.  

E-Print Network (OSTI)

??In dieser Arbeit wurde detailliert das Potential eines azidischen Single-Molecule-Precursors als mögliche Alternative zum kommerziellen Standardprozess zur Herstellung dünner GaN-Halbleiterdünnschichten evaluiert. Neben den mit maximalen… (more)

Wohlfart, Andreas

2002-01-01T23:59:59.000Z

333

Observation of the potential distribution in GaN-based devices by a scanning electron microscope  

Science Journals Connector (OSTI)

......potential. On the other hand, higher accelerating voltages resulted in blurred images. The second sample was a light emitting diode structure based on AlN where a multiple quantum well (MQW) structure was sandwiched by p- and n-AlGaN materials......

Takahiro Karumi; Shigeyasu Tanaka; Takayoshi Tanji

2014-11-01T23:59:59.000Z

334

Infrared spectroscopy of amorphous hydrogenated GaAs: Evidence for H bridges  

Science Journals Connector (OSTI)

The infrared absorption spectra of hydrogenated amorphous GaAs show two prominent hydrogen-related bands at 530 and 1460 cm-1. These bands are very broad and they amount to most of the hydrogen-induced infrared absorption. The remaining structures are a number of comparatively sharp lines which we interpret as Ga-H and As-H modes in partial agreement with earlier investigations. We argue that the broad bands arise from near-stretching (1460 cm-1) and from wagging (530 cm-1) vibrations of H atoms situated in bridging positions between two Ga atoms. This assignment is supported by similar bands in Al-H polymers, a-GaP: H, and a-GaSb: H. A model calculation of the mode frequencies is also presented.

Z. P. Wang; L. Ley; M. Cardona

1982-09-15T23:59:59.000Z

335

Submicron three-dimensional infrared GaAsAlxOy-based photonic crystal using single-step epitaxial growth  

E-Print Network (OSTI)

to determine the transmission characteris- tics. The starting point in the fabrication of the photonic crys-beam patterned resist and sub- sequently the checkerboard pattern is transferred to the metal layer by a lift growth system. After oxide desorption, four periods of alternating 0.2 m Al0.98Ga0.02As/0.2 m Al0.30Ga0

Zhou, Weidong

336

Industry @ ALS  

NLE Websites -- All DOE Office Websites (Extended Search)

Industry @ ALS Industry @ ALS Industry @ ALS Concrete Industry Benefits from Ancient Romans and the ALS Print Thursday, 17 October 2013 14:24 New insights into the Romans' ingenious concrete harbor structures emerging from ALS beamline research could move the modern concrete industry toward its goal of a reduced carbon footprint. Summary Slide Read more... Moving Industry Forward: Finding the Environmental Opportunity in Biochar Print Thursday, 12 September 2013 08:41 Using ALS Beamlines 10.3.2 and 8.3.2, the Environmental Protection Agency (EPA) is currently investigating how biochar sorbs environmental toxins and which kinds of biochar are the most effective. The possibilities for widespread use have already launched entrepreneurial commercial ventures. Summary Slide

337

Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition  

DOE Patents (OSTI)

Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

Han, Jung (Woodbridge, CT); Su, Jie (New Haven, CT)

2008-08-05T23:59:59.000Z

338

ALS Visitors  

NLE Websites -- All DOE Office Websites (Extended Search)

including Ethan Crumlin (at right) about current research in energy storage and battery efficiency. Berkeleyside Editor Lance Knoble toured the ALS and Berkeley Lab with...

339

JLab: June 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

JLab: June 1, 2005 - Sept 30, 2006 JLab: June 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

340

Fermilab: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Fermilab: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

PNNL: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PNNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

342

Ames: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ames: Oct 1, 2005 - Sept 30, 2006 Ames: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

343

LBNL: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

LBNL: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

344

SLAC: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SLAC: Oct 1, 2005 - Sept 30, 2006 SLAC: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

345

BNL: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

BNL: BNL: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

346

FY 2013 SC Laboratory Performance Report Cards | U.S. DOE Office of Science  

NLE Websites -- All DOE Office Websites (Extended Search)

3 SC Laboratory Performance Report Cards 3 SC Laboratory Performance Report Cards Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards

347

FY 2012 SC Laboratory Performance Report Cards | U.S. DOE Office of Science  

NLE Websites -- All DOE Office Websites (Extended Search)

2 SC Laboratory Performance Report Cards 2 SC Laboratory Performance Report Cards Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards

348

ORNL: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

ORNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

349

PPPL: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PPPL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

350

Argonne: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Argonne: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

351

FY 2010 SC Laboratory Performance Report Cards | U.S. DOE Office of Science  

NLE Websites -- All DOE Office Websites (Extended Search)

10 SC Laboratory Performance Report Cards 10 SC Laboratory Performance Report Cards Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards Ames: Oct 1, 2009 - Sept 30, 2010 Argonne: Oct 1, 2009 - Sept 30, 2010 BNL: Oct 1, 2009 - Sept 30, 2010 Fermilab: Oct 1, 2009 - Sept 30, 2010 LBNL: Oct 1, 2009 - Sept 30, 2010 ORNL: Oct 1, 2009 - Sept 30, 2010 PNNL: Oct 1, 2009 - Sept 30, 2010 PPPL: October 1, 2009 - September 30, 2010 SLAC: Oct 1, 2009 - Sept 30, 2010 JLab: Oct 1, 2009 - Sept 30, 2010 FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards

352

FY 2011 SC Laboratory Performance Report Cards | U.S. DOE Office of Science  

NLE Websites -- All DOE Office Websites (Extended Search)

1 SC Laboratory Performance Report Cards 1 SC Laboratory Performance Report Cards Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards Ames: Oct 1, 2010 - Sept 30, 2011 Argonne: Oct 1, 2010 - Sept 30, 2011 BNL: Oct 1, 2010 - Sept 30, 2011 Fermilab: Oct 1, 2010 - Sept 30, 2011 LBNL: Oct 1, 2010 - Sept 30, 2011 ORNL: Oct 1, 2010 - Sept 30, 2011 PNNL: Oct 1, 2010 - Sept 30, 2011 PPPL: October 1, 2010 - September 30, 2011 SLAC: Oct 1, 2010 - Sept 30, 2011 JLab: Oct 1, 2010 - Sept 30, 2011 FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards

353

Beta decay of Ga-62  

E-Print Network (OSTI)

We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

354

Combustion of Nano-Aluminum and Liquid Water G.A. Risha, S.F. Son  

E-Print Network (OSTI)

1 Combustion of Nano-Aluminum and Liquid Water G.A. Risha, S.F. Son , R.A. Yetter, V. Yang, and B: Supplemental materials submitted #12;2 Combustion of Nano-Aluminum and Liquid Water G.A. Risha, S.F. Son, R of nano-aluminum (nAl) and liquid water has been conducted. In particular, linear and mass-burning rates

Yang, Vigor

355

Integration of inverted InGaAs MSM array on Si substrate through low temperature  

E-Print Network (OSTI)

to reduce thermal stress at the interface. Huang et al. [2] presented a thin-film InGaAs MSM PD bonded to Si layers including those on InGaAs MSMs and Si/SiO2 is 860 nm. eching window InP epi-layer SiO2 Si Ti Au Au HCl:H3PO4 (1:1) to open a photodetection window. Citric acid was used to remove the InGaAs etching

Huang, Zhaoran "Rena"

356

Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells  

SciTech Connect

The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk conductivity by using gallium source materials of different degrees of impurity concentrations. While highest-purity gallium is accompanied by clear conduction through the sample bulk, intentional impurity incorporation leads to a bulk resistance over 1 M?, independent of applied magnetic fields. In addition, ultra high electron mobilities for GaAs/AlGaAs structures fabricated in a molecular beam epitaxy system used for the growth of Sb-based samples are reported.

Charpentier, Christophe; Fält, Stefan; Reichl, Christian; Nichele, Fabrizio; Nath Pal, Atindra; Pietsch, Patrick; Ihn, Thomas; Ensslin, Klaus; Wegscheider, Werner [Laboratory for Solid State Physics, ETH Zürich, 8093 Zürich (Switzerland)] [Laboratory for Solid State Physics, ETH Zürich, 8093 Zürich (Switzerland)

2013-09-09T23:59:59.000Z

357

Science Highlights | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Science Highlights Science Highlights Fusion Energy Sciences (FES) FES Home About Research Facilities Science Highlights Benefits of FES Funding Opportunities Fusion Energy Sciences Advisory Committee (FESAC) News & Resources Contact Information Fusion Energy Sciences U.S. Department of Energy SC-24/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4941 F: (301) 903-8584 E: sc.fes@science.doe.gov More Information » Science Highlights Print Text Size: A A A Subscribe FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC) Argonne Leadership Computing Facility (ALCF)

358

Science Highlights | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Highlights Highlights High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » Science Highlights Print Text Size: A A A Subscribe FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC) Argonne Leadership Computing Facility (ALCF) Oak Ridge Leadership Computing Facility (OLCF)

359

2013 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

3 3 Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » Science Highlights 2013 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC)

360

Directions | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Directions Directions Biological and Environmental Research (BER) BER Home About Staff Organization Chart .pdf file (172KB) BER Budget BER Committees of Visitors Directions Jobs Research Facilities Science Highlights Benefits of BER Funding Opportunities Biological & Environmental Research Advisory Committee (BERAC) News & Resources Contact Information Biological and Environmental Research U.S. Department of Energy SC-23/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3251 F: (301) 903-5051 E: sc.ber@science.doe.gov More Information » About Directions Print Text Size: A A A RSS Feeds FeedbackShare Page Directions to Department of Energy, Germantown, Maryland and the Office of Biological and Environmental Research Mailing Address: SC-23/Germantown Building

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361

2012 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Science Highlights » 2012 Science Highlights » 2012 Fusion Energy Sciences (FES) FES Home About Research Facilities Science Highlights Benefits of FES Funding Opportunities Fusion Energy Sciences Advisory Committee (FESAC) News & Resources Contact Information Fusion Energy Sciences U.S. Department of Energy SC-24/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4941 F: (301) 903-8584 E: sc.fes@science.doe.gov More Information » Science Highlights 2012 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC) Argonne Leadership Computing Facility (ALCF)

362

2012 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Funding Opportunities Nuclear Science Advisory Committee (NSAC) News & Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E: sc.np@science.doe.gov More Information » Science Highlights 2012 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC) Argonne Leadership Computing Facility (ALCF) Oak Ridge Leadership Computing Facility (OLCF)

363

2012 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Science Highlights » 2012 Science Highlights » 2012 Biological and Environmental Research (BER) BER Home About Research Facilities Science Highlights Searchable Archive of BER Highlights External link Benefits of BER Funding Opportunities Biological & Environmental Research Advisory Committee (BERAC) News & Resources Contact Information Biological and Environmental Research U.S. Department of Energy SC-23/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3251 F: (301) 903-5051 E: sc.ber@science.doe.gov More Information » Science Highlights 2012 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities

364

Human Resources | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Human Human Resources Human Resources and Administration (HRA) HRA Home Leadership Organization Chart .pdf file (27KB) Human Resources Administration SC Correspondence Control Center (SC CCC) Contact Information Human Resources and Administration U.S. Department of Energy SC-48/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-1133 F: (301) 903-1299 Human Resources Print Text Size: A A A RSS Feeds FeedbackShare Page Workforce Planning, Organizational Analysis and Classification: OHRA works with organizations to assess the current workforce, predict the future workforce, identify gaps, and develop new strategies to address those gaps. It provides vital data for management to use when preparing their staffing plans. The staff reviews positions for appropriate

365

2013 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » Science Highlights 2013 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC) Argonne Leadership Computing Facility (ALCF) Oak Ridge Leadership Computing Facility (OLCF)

366

Leadership | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Leadership Leadership Human Resources and Administration (HRA) HRA Home Leadership Organization Chart .pdf file (27KB) Human Resources Administration SC Correspondence Control Center (SC CCC) Contact Information Human Resources and Administration U.S. Department of Energy SC-48/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-1133 F: (301) 903-1299 Leadership Print Text Size: A A A RSS Feeds FeedbackShare Page Director, Human Resources and Administration Division Cyndi Mays Cyndi Mays is a senior level federal manager with experience managing organizations, projects and people. She has a proven track record in Human Resources Operations, Human Capital Strategy along with Human Resource Transformation projects. Her expertise includes recruitment,

367

Staff | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Staff Staff Advanced Scientific Computing Research (ASCR) ASCR Home About Staff Organization Chart .pdf file (85KB) ASCR Budget ASCR Committees of Visitors Directions Jobs Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » About Staff Print Text Size: A A A RSS Feeds FeedbackShare Page How To Contact ASCR By U.S. Mail U.S. Department of Energy SC-21 Germantown Building 1000 Independence Ave., SW Washington, DC 20585-1290 Delivery Address U.S. Department of Energy

368

Administration | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Administration Human Resources and Administration (HRA) HRA Home Leadership Organization Chart .pdf file (27KB) Human Resources Administration SC Correspondence Control Center (SC CCC) Contact Information Human Resources and Administration U.S. Department of Energy SC-48/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-1133 F: (301) 903-1299 Administration Print Text Size: A A A RSS Feeds FeedbackShare Page Performance Management and Awards: OHRA administers and advises on the systematic process by which the Office of Science involves its employees, as individuals and members of a group, in improving organizational effectiveness against the accomplishment of agency mission and goals. This process involves management in planning work

369

Oversight | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Oversight Oversight Deputy Director for Field Operations Deputy Director Home Mission & Functions Deputy Director Biography Organization Oversight Contractor Assurance Systems Who We Are Operations Improvement Committee Contact Information Deputy Director for Field Operations U.S. Department of Energy SC-3/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5434 F: (202) 586-4120 E: sc.science@science.doe.gov Oversight Print Text Size: A A A RSS Feeds FeedbackShare Page SC's field operations must simultaneously drive outstanding mission performance while holding the M&O contractors accountable for results. From an operations perspective, the ten Science laboratories vary significantly in their size and complexity. As a result, our Site Offices

370

2013 | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Science Highlights » 2013 Science Highlights » 2013 Basic Energy Sciences (BES) BES Home About Research Facilities Science Highlights Benefits of BES Funding Opportunities Basic Energy Sciences Advisory Committee (BESAC) News & Resources Contact Information Basic Energy Sciences U.S. Department of Energy SC-22/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3081 F: (301) 903-6594 E: sc.bes@science.doe.gov More Information » Science Highlights 2013 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC) Argonne Leadership Computing Facility (ALCF)

371

2013 | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

3 3 Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Funding Opportunities Nuclear Science Advisory Committee (NSAC) News & Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E: sc.np@science.doe.gov More Information » Science Highlights 2013 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC) Argonne Leadership Computing Facility (ALCF) Oak Ridge Leadership Computing Facility (OLCF)

372

Science Highlights | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Science Highlights Science Highlights Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » Science Highlights Print Text Size: A A A Subscribe FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC)

373

2013 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Biological and Environmental Research (BER) BER Home About Research Facilities Science Highlights Searchable Archive of BER Highlights External link Benefits of BER Funding Opportunities Biological & Environmental Research Advisory Committee (BERAC) News & Resources Contact Information Biological and Environmental Research U.S. Department of Energy SC-23/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3251 F: (301) 903-5051 E: sc.ber@science.doe.gov More Information » Science Highlights 2013 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC)

374

Staff | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Staff Staff Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process Laboratory Planning Process Work for Others in the Office of Science Laboratory Directed Research and Development (LDRD) Technology Transfer DOE National Laboratories Contact Information Laboratory Policy and Evaluation U.S. Department of Energy SC-32/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5447 F: (202) 586-3119 Staff Print Text Size: A A A RSS Feeds FeedbackShare Page Office of Laboratory Policy and Evaluation L. Devon Streit, Associate Director Email: lisa.streit@science.doe.gov Mailing Address: Office of Laboratory Policy and Evaluation, SC-32 U.S. Department of Energy 1000 Independence Avenue, SW Washington, D.C. 20585-1290

375

2012 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

2 2 Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » Science Highlights 2012 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC)

376

2012 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Science Highlights » 2012 Science Highlights » 2012 High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » Science Highlights 2012 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC) Argonne Leadership Computing Facility (ALCF) Oak Ridge Leadership Computing Facility (OLCF)

377

China SC Exact Equipment Co LTD | Open Energy Information  

Open Energy Info (EERE)

SC Exact Equipment Co LTD SC Exact Equipment Co LTD Jump to: navigation, search Name China SC Exact Equipment Co., LTD Place Shenzhen, Guangdong Province, China Zip 518125 Sector Solar Product China-based Solar PV cell equipment manufacturer. Coordinates 22.546789°, 114.112556° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":22.546789,"lon":114.112556,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

378

aa | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Advanced Scientific Computing Research (ASCR) ASCR Home About Research Applied Mathematics Computer Science Exascale Tools Workshop Programming Challenges Workshop Architectures I Workshop External link Architectures II Workshop External link Next Generation Networking Scientific Discovery through Advanced Computing (SciDAC) Computational Science Graduate Fellowship (CSGF) ASCR SBIR-STTR Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information »

379

SDM | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SDM SDM Advanced Scientific Computing Research (ASCR) ASCR Home About Research Applied Mathematics Computer Science Exascale Tools Workshop Programming Challenges Workshop Architectures I Workshop External link Architectures II Workshop External link Next Generation Networking Scientific Discovery through Advanced Computing (SciDAC) Computational Science Graduate Fellowship (CSGF) ASCR SBIR-STTR Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information »

380

Challenges | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Challenges Challenges Advanced Scientific Computing Research (ASCR) ASCR Home About Research Applied Mathematics Computer Science Exascale Tools Workshop Programming Challenges Workshop Architectures I Workshop External link Architectures II Workshop External link Next Generation Networking Scientific Discovery through Advanced Computing (SciDAC) Computational Science Graduate Fellowship (CSGF) ASCR SBIR-STTR Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information »

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Newsletters | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Newsletters Newsletters About Organization Budget Field Offices Federal Advisory Committees History Scientific and Technical Information Honors & Awards Jobs Brochures, Logos, & Information Resources Brochures Fact Sheets SC Logos Newsletters Connect with SC Contact Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 Brochures, Logos, & Information Resources Newsletters Print Text Size: A A A RSS Feeds FeedbackShare Page Laboratory Newsletters Ames Laboratory Inquiry External link | Archive External link Brookhaven National Laboratory The Bulletin External link | Archive External link Fermi National Accelerator Laboratory Fermilab Today External link | Archive External link Lawrence Berkeley National Laboratory

382

Optical losses of Al-free lasers for {lambda}=0.808 and 0.98 {mu}m  

SciTech Connect

In this work, we study the origin of the optical losses in Al-free InGaAsP/GaAs ({lambda}=0.808 {mu}m) and InGaAs/GaAs/InGaP ({lambda}=0.980 {mu}m) lasers. Theoretical modeling and the experimental results indicate that the scattering of the laser beam by refractive index fluctuation in the alloys is the dominant loss in our lasers, and the loss due to the free-carrier absorption and scattering by interface roughness are negligible. {copyright} {ital 1996 American Institute of Physics.}

Yi, H.; Diaz, J.; Lane, B.; Razeghi, M. [Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208 (United States)] [Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208 (United States)

1996-11-01T23:59:59.000Z

383

ALS Visitors  

NLE Websites -- All DOE Office Websites (Extended Search)

ALS Visitors ALS Visitors ALS Visitors Print Wednesday, 29 July 2009 00:00 ALS staff members host a variety of scientific, educational, government, and community-related tours each month. November 2013 poneman U.S. Deputy Secretary of Energy Daniel Poneman visited Berkeley Lab on Friday, Nov. 15, during a brief stay in the Bay Area. Glenn Mara of the University of California Office of the President and Aundra Richards of the DOE Berkeley Site Office joined Deputy Laboratory Director Horst Simon's welcome. They updated Poneman on the lab's future initiatives and current capital projects and heard briefings on cyber security, computing, and the Joint BioEnergy Institute. As second-in-command at DOE, Poneman is responsible for assisting the Secretary of Energy in the management and operations of the agency and acting on his behalf when necessary.During his tour of the ALS, Poneman (right) spoke with Ken Goldberg (Materials Sciences Division) at the CXRO beamline.

384

Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices  

SciTech Connect

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

2003-06-16T23:59:59.000Z

385

Sandia National Laboratories: AlGaAs LEDs  

NLE Websites -- All DOE Office Websites (Extended Search)

electroluminescence was first reported by H.J. Round in 1907, and the first light-emitting diode (LED) was reported by O.V. Losev in 1927. Not until the birth of semiconductor...

386

Doping Characteristics of Gas-Source MBE-Grown n-AlxGa1-xAs (x=0-0.28) Doped Using Disilane  

Science Journals Connector (OSTI)

Si doping using uncracked disilane (Si2H6) in gas-source molecular beam epitaxy of n-AlxGa1-xAs (x=0-0.28) using triethyl gallium, triethyl aluminum, and arsine was studied in a carrier concentration from 5 ? 1017 to 2 ? 1018 cm-3. We found that (1) the Si atomic concentration of AlGaAs is proportional to the Si2H6 flow rate, and decreases with increasing Al content at a constant Si2H6 flow rate, and (2) the carrier concentration of AlGaAs shows a square-root dependence on the Si atomic concentration incorporated.

Toshio Fujii; Adarsh Sandhu; Hideyasu Ando; Yuji Kataoka; Hideaki Ishikawa

1990-01-01T23:59:59.000Z

387

Economics Engineering (B.Sc.) Summer Term 2014  

E-Print Network (OSTI)

Economics Engineering (B.Sc.) Summer Term 2014 Long version Date: 26.02.2014 Department of Economics and Business Engineering KIT - University of the State of Baden-Wuerttemberg and National Research to the german version of the handbook. Contents 1 Structure of the Bachelor Programme in Economics Engineering

Stein, Oliver

388

INTRA Programme B.Sc. Physics with Astronomy  

E-Print Network (OSTI)

INTRA Programme B.Sc. Physics with Astronomy The Objective of this four-year, full-time degree with a physics degree and associated skills in IT and mathematics, combined with a good background in astronomy and astrophysics as a specialisation (i.e. a physics "major", astronomy "minor"). The courses taught within

Humphrys, Mark

389

Algorithms With Impact (CpSc 940: Advanced Algorithms)  

E-Print Network (OSTI)

Algorithms With Impact (CpSc 940: Advanced Algorithms) Instructor: Dr. Brian Dean Fall 2011 Webpage and Course Goals The study of algorithms is a significant part of the foundation for the discipline of computer science. Over the past several decades, research in algorithmic computer science has advanced

Dean, Brian C.

390

Clemson, SC 29634-4022 (864)656-2451  

E-Print Network (OSTI)

Box 344022 Clemson, SC 29634-4022 (864)656-2451 ACTT REFERRAL FORM Page 1 of 1 Name of the program visit: http://www.clemson.edu/studentaffairs/redfern/divisions/caps/actt/index.php Referral Agency: ________________________________________________________________________ ________________________________________________________________________ ________________________________________________________________________ Phone: (_____) _____- ________ Brief Description of Referral Incident

Duchowski, Andrew T.

391

CN/2011/SC/IHP/PI/2 Sediment Issues & Sediment  

E-Print Network (OSTI)

CN/2011/SC/IHP/PI/2 #12;Sediment Issues & Sediment Management in Large River Basins Interim Case Study Synthesis Report International Sediment Initiative Technical Documents in Hydrology UNESCO Office Sediment Initiative Core Group - Members: o Prof. Desmond Walling o Prof. Manfred Spreafico o Prof. Hu

Julien, Pierre Y.

392

Graduate Student ScHool of Graduate StudieS  

E-Print Network (OSTI)

Graduate Student Handbook ScHool of Graduate StudieS 2012-2013 #12;Foreword This handbook should website http://gradstudies.case.edu for the most comprehensive and up to date information. The learning scholarly activity, the very search for knowledge is impaired. In these respects, each of us

Rollins, Andrew M.

393

SC-RISE LECTURE SERIES BRIGHT HORIZONS IN SOLAR ENERGY  

E-Print Network (OSTI)

are being developed including biomass, geothermal, hydropower, ocean thermal energy conversion, solar the role energy storage can play. Many complex environmental factors must also be fully addressed earlySC-RISE LECTURE SERIES BRIGHT HORIZONS IN SOLAR ENERGY Sustainable Energy Opportunities, Options

394

Clemson University Water System System No, SC3910006  

E-Print Network (OSTI)

, and other things you should know about drinking water. The U.S. Environmental Protection Agency (EPA) and the S.C. Department of Health and Environmental Control have strict standards for all drinking water contaminant that was detected in the water, even in the most minute traces, is listed here. The table contains

Duchowski, Andrew T.

395

Clemson University Water System System No, SC3910006  

E-Print Network (OSTI)

, and other things you should know about drinking water. The U.S. Environmental Protection Agency (EPA) and the S.C. Department of Health and Environmental Control (DHEC) have strict standards for all drinking-quality analyses. Every regulated contaminant that was detected in the water, even in the most minute traces

Duchowski, Andrew T.

396

Clemson University Water System System No, SC3910006  

E-Print Network (OSTI)

, and other things you should know about drinking water. The U.S. Environmental Protection Agency (EPA) and the S.C. Department of Health and Environmental Control (DHEC) have strict standards for all drinking-quality analyses. Every regulated contaminant that was detected in the water, even the most minute trace, is listed

Duchowski, Andrew T.

397

Fant's Grove Water System System No, SC390112  

E-Print Network (OSTI)

, and other things you should know about drinking water. The U.S. Environmental Protection Agency (EPA) and the S.C. Department of Health and Environmental Control have strict standards for all drinking water contaminant that was detected in the water, even in the most minute traces, is listed here. The table contains

Duchowski, Andrew T.

398

Clemson University Water System System No, SC3910006  

E-Print Network (OSTI)

things you should know about drinking water. The U.S. Environmental Protection Agency (EPA) and the S.C. Department of Health and Environmental Control (DHEC) have strict standards for all drinking water contaminant that was detected in the water, even the most minute trace, is listed here. The table contains

Duchowski, Andrew T.

399

ALS Visitors  

NLE Websites -- All DOE Office Websites (Extended Search)

ALS Visitors Print ALS Visitors Print ALS staff members host a variety of scientific, educational, government, and community-related tours each month. November 2013 poneman U.S. Deputy Secretary of Energy Daniel Poneman visited Berkeley Lab on Friday, Nov. 15, during a brief stay in the Bay Area. Glenn Mara of the University of California Office of the President and Aundra Richards of the DOE Berkeley Site Office joined Deputy Laboratory Director Horst Simon's welcome. They updated Poneman on the lab's future initiatives and current capital projects and heard briefings on cyber security, computing, and the Joint BioEnergy Institute. As second-in-command at DOE, Poneman is responsible for assisting the Secretary of Energy in the management and operations of the agency and acting on his behalf when necessary.During his tour of the ALS, Poneman (right) spoke with Ken Goldberg (Materials Sciences Division) at the CXRO beamline.

400

Al Weinrub  

NLE Websites -- All DOE Office Websites (Extended Search)

Al Weinrub Al Weinrub Author, "COMMUNITY POWER: Decentralized Renewable Energy in California" Member, Sierra Club California Clean Energy-Climate CommitteeMember, Steering Committee, Bay Area Clean Energy Alliance al.weinrub@comcast.net This speaker was a visiting speaker who delivered a talk or talks on the date(s) shown at the links below. This speaker is not otherwise associated with Lawrence Berkeley National Laboratory, unless specifically identified as a Berkeley Lab staff member. Al Weinrub is a member of the Sierra Club California Energy-Climate Committee and serves on the Steering Committee of the Bay Area's Local Clean Energy Alliance. He is the author of COMMUNITY POWER: Decentralized Renewable Energy in California (http://www.localcleanenergy.org/Community-Power-Publication)

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Fermilab: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Fermilab: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

402

LBNL: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

LBNL: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

403

BNL: Oct 1, 2006 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

BNL: BNL: Oct 1, 2006 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

404

PPPL: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PPPL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

405

LBNL: Oct 1, 2006 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

LBNL: Oct 1, 2006 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

406

SLAC: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SLAC: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

407

PNNL: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PNNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

408

ORNL: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

ORNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

409

PNNL: Oct 1, 2006 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PNNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

410

LBNL: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

LBNL: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

411

SLAC: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SLAC: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

412

LBNL: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

LBNL: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

413

Ames: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ames: Oct 1, 2012 - Sept 30, 2013 Ames: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

414

BNL: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

BNL: BNL: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

415

BNL: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

BNL: BNL: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

416

PPPL: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PPPL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

417

Argonne: Oct 1, 2006 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Argonne: Oct 1, 2006 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

418

Ames: Jan 1, 2007 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ames: Jan 1, 2007 - Sept 30, 2007 Ames: Jan 1, 2007 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

419

SLAC: Oct 1, 2006 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SLAC: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

420

ORNL: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

ORNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

PNNL: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PNNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

422

Fermilab: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Fermilab: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

423

JLab: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

JLab: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

424

Ames: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ames: Oct 1, 2007 - Sept 30, 2008 Ames: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

425

Argonne: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Argonne: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

426

Fermilab: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Fermilab: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

427

Ames: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ames: Oct 1, 2008 - Sept 30, 2009 Ames: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

428

PNNL: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PNNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

429

Fermilab: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Fermilab: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

430

JLab: Oct 1, 2006 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

JLab: Oct 1, 2006 - Sept 30, 2007 JLab: Oct 1, 2006 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

431

BNL: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

BNL: BNL: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

432

BNL: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

BNL: BNL: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

433

Argonne: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Argonne: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

434

PPPL: Apr 1, 2009 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PPPL: Apr 1, 2009 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

435

SLAC: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SLAC: Oct 1, 2008 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

436

Argonne: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Argonne: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

437

SLAC: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SLAC: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

438

Fermilab: Jan 1, 2007 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Fermilab: Jan 1, 2007 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

439

Ames: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ames: Oct 1, 2011 - Sept 30, 2012 Ames: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

440

ORNL: Oct 1, 2006 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

ORNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

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441

ORNL: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

ORNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

442

PNNL: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PNNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

443

Argonne: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Argonne: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

444

JLab: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

JLab: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

445

JLab: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

JLab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

446

PPPL: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PPPL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

447

ORNL: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

ORNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

448

PPPL: Oct 1, 2006 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PPPL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

449

LBNL: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

LBNL: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

450

JLab: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

JLab: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

451

T-527: OpenSC Smart Card Serial Number Multiple Buffer Overflow  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7: OpenSC Smart Card Serial Number Multiple Buffer Overflow 7: OpenSC Smart Card Serial Number Multiple Buffer Overflow Vulnerabilities T-527: OpenSC Smart Card Serial Number Multiple Buffer Overflow Vulnerabilities January 4, 2011 - 5:52pm Addthis PROBLEM: OpenSC Smart Card Serial Number Multiple Buffer Overflow Vulnerabilities PLATFORM: Vulnerable Platform: OpenSC 0.11.13 ABSTRACT: OpenSC is prone to multiple buffer-overflow vulnerabilities because the application fails to perform adequate boundary checks on user-supplied input. Attackers may leverage these issues to execute arbitrary code in the context of the application. Failed attacks will cause denial-of-service conditions. reference LINKS: SecurityFocus - OpenSC Smart Card Serial CVE-2010-4523 OpenSC: Three stack-based buffer overflows CVE-2010-4523 - Three stack-based buffer overflows

452

IEEE TRANSACTIONS ON MAGNETICS, VOL. 38, NO. 4, JULY 2002 1803 New Ni5Al3 Underlayer for Longitudinal  

E-Print Network (OSTI)

IEEE TRANSACTIONS ON MAGNETICS, VOL. 38, NO. 4, JULY 2002 1803 New Ni5Al3 Underlayer--We describe a new Ni5Al3 underlayer for high-den- sity longitudinal magnetic recording. The Ni5Al3 underlayer has the FCC derivative Ga3Pt5 structure. The Ni5Al3 (221) plane has good lattice match with the Co

Laughlin, David E.

453

E-Print Network 3.0 - al-fe alloys strukturnyj Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

Theory NiAl CoAl FeAl CoGa PdIn VT,1 A Q M 1, 0 128, 0 144... , with transition-metal vacancies (VT) for T-deficient ... Source: Collins, Gary S. - Department of Physics...

454

Pulsed laser deposition growth of heteroepitaxial YBa2Cu3O7/La0.67Ca0.33MnO3 superlattices on NdGaO3 and Sr0.7La0.3Al0.65Ta0.35O3 substrates  

SciTech Connect

Heteroepitaxial superlattices of [YBa{sub 2}Cu{sub 3}O{sub 7}(n)/La{sub 0.67}Ca{sub 0.33}MnO{sub 3}(m)]{sub x} (YBCO/LCMO), where n and m are the number of YBCO and LCMO monolayers and x the number of bilayer repetitions, have been grown with pulsed laser deposition on NdGaO{sub 3} (110) and Sr{sub 0.7}La{sub 0.3}Al{sub 0.65}Ta{sub 0.35}O{sub 3} (001). These substrates are well lattice matched with YBCO and LCMO and, unlike the commonly used SrTiO{sub 3}, they do not give rise to complex and uncontrolled strain effects at low temperature. The growth dynamics and the structure have been studied in situ with reflection high-energy electron diffraction and ex situ with scanning transmission electron microscopy, x-ray diffraction, and neutron reflectometry. The individual layers are found to be flat and continuous over long lateral distances with sharp and coherent interfaces and with a well-defined thickness of the individual layer. The only visible defects are antiphase boundaries in the YBCO layers that originate from perovskite unit-cell height steps at the interfaces with the LCMO layers. We also find that the first YBCO monolayer at the interface with LCMO has an unusual growth dynamics and is lacking the CuO chain layer, while the subsequent YBCO layers have the regular Y-123 structure. Accordingly, the CuO{sub 2} bilayers at both the LCMO/YBCO and the YBCO/LCMO interfaces are lacking one of their neighboring CuO chain layers and, thus, half of their hole-doping reservoir. Nevertheless, from electric transport measurements on a superlattice with n = 2 we obtain evidence that the interfacial CuO{sub 2} bilayers remain conducting and even exhibit the onset of a superconducting transition at very low temperature. Finally, we show from dc magnetization and neutron reflectometry measurements that the LCMO layers are strongly ferromagnetic.

Malik, V. K. [University of Fribourg; Marozau, I. [University of Fribourg; Das, S. [University of Fribourg; Doggett, B. [University of Fribourg; Satapathy, D. K. [University of Fribourg; Uribe-Laverde, M. A. [University of Fribourg; Biskup, Nevenko [ORNL; Varela del Arco, Maria [ORNL; Schneider, C. W. [Paul Scherrer Institut, Villigen, Switzerland; Marcelot, C. [Paul Scherrer Institut, Villigen, Switzerland; Stahn, J. [Paul Scherrer Institut, Villigen, Switzerland; Bernhard, C. [University of Fribourg

2012-01-01T23:59:59.000Z

455

Definitive evidence of interlayer coupling between Ga{sub 1-x}Mn{sub x}As layers separated by a nonmagnetic spacer  

SciTech Connect

We have used polarized neutron reflectometry to study the structural and magnetic properties of the individual layers in a series of AlGaAs:Be/Ga{sub 1-x}Mn{sub x}As/GaAs/Ga{sub 1-x}Mn{sub x}As multilayer samples. Structurally, we observe that the samples are virtually identical except for the GaAs spacer thickness (which varies from 3 to 12 nm), and confirm that the spacers contain little or no Mn. Magnetically, we observe that for the sample with the thickest spacer layer, the Ga{sub 1-x}Mn{sub x}As layer adjacent to the Be-doped AlGaAs cap has a temperature dependent magnetization very different from that of the other Ga{sub 1-x}Mn{sub x}As layer. However, as the spacer layer thickness is reduced, the temperature dependent magnetizations of the two Ga{sub 1-x}Mn{sub x}As layers become progressively more similar--a trend we find to be independent of the crystallographic direction along which spins are magnetized. These results definitively show that Ga{sub 1-x}Mn{sub x}As layers can couple across a nonmagnetic spacer and that such coupling depends on spacer thickness.

Kirby, B. J.; Borchers, J. A.; Liu, X.; Ge, Z.; Cho, Y. J.; Dobrowolska, M.; Furdyna, J. K. [NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2007-11-15T23:59:59.000Z

456

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

457

Novel GaAs Devices  

Science Journals Connector (OSTI)

As the dimensions of GaAs devices shrink, the effective electron velocity should increase, leading to a shorter transit time and to a ballistic or near-ballistic mode of operation (see Chapter 2). At the same ...

Michael Shur

1987-01-01T23:59:59.000Z

458

Advanced Light Source (ALS) | U.S. DOE Office of Science (SC...  

Office of Science (SC) Website

Syncrotron Light Source (NSLS-II) Stanford Synchrotron Radiation Light Source (SSRL) Neutron Scattering Facilities Nanoscale Science Research Centers (NSRCs) Projects...

459

IP ADDRESS HOSTNAME MACHINE TYPE 129.252.130.106 canopus.cse.sc.edu # SUN Ultra10  

E-Print Network (OSTI)

129.252.130.163 hades.cse.sc.edu # Linux lab Precision 380 129.252.130.164 skylla.cse.sc.edu # Linux

Bakos, Jason D.

460

College/University: 2001-2003 Madurai kamaraj University M.Sc in Biotechnology.  

E-Print Network (OSTI)

Education College/University: 2001-2003 Madurai kamaraj University M.Sc in Biotechnology. Highest degree: M.Sc. in Biotechnology Major Subjects: Biotechnology Projects/Research: 1.Expression, refolding,india for selection in All india combined M.Sc. biotechnology programe (2001-2003). 2. Junior Research Fellowship (JRF

Manstein, Dietmar J.

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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461

College/University: 2000-2002 Madurai kamaraj University M.Sc in Biotechnology.  

E-Print Network (OSTI)

Education College/University: 2000-2002 Madurai kamaraj University M.Sc in Biotechnology. Highest degree: M.Sc. in Biotechnology Major Subjects: Biotechnology Projects/Research: 1. Construction lanuginosus. Scholarships: 1. Awarded by DBT,india for selection in All india combined M.Sc. biotechnology

Manstein, Dietmar J.

462

College/University: 2001-2003 University of Jammu, M.Sc in Biotechnology.  

E-Print Network (OSTI)

Education College/University: 2001-2003 University of Jammu, M.Sc in Biotechnology. Highest degree: M.Sc. in Biotechnology Major Subjects: Biotechnology Projects/Research: 1. Construction in All india combined M.Sc. biotechnology program. (2001-2003). 2. Junior Research Fellowship (JRF

Manstein, Dietmar J.

463

1D-1D tunneling between vertically coupled GaAs/AlGaAs quantum wires.  

SciTech Connect

We report low-dimensional transport and tunneling in an independently contacted vertically coupled quantum wire system, with a 7.5 nm barrier between the wires. The derivative of the linear conductance shows evidence for both single wire occupation and coupling between the wires. This provides a map of the subband occupation that illustrates the control that we have over the vertically coupled double quantum wires. Preliminary tunneling results indicate a sharp 1D-1D peak in conjunction with a broad 2D-2D background signal. This 1D-1D peak is sensitively dependent on the top and bottom split gate voltage.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-07-01T23:59:59.000Z

464

Capacitance hysteresis in GaN/AlGaN heterostructures L. E. Byrum,1  

E-Print Network (OSTI)

Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA 2 NDP Optronics

Matsik, Steven G.

465

GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges  

E-Print Network (OSTI)

, Georgia State University, Atlanta, Georgia 30303 S. G. Matsik NDP Optronics LLC, Mableton, Georgia 30126 A

Perera, A. G. Unil

466

Electron microscopy of GaAs/AlGaAs quantum cascade laser  

Science Journals Connector (OSTI)

The quantum cascade laser (QCL) is based on a different principle comparing to bipolar semiconductor lasers, because it uses only one type of ... — electrons and therefore is called an unipolar laser.

A. ?aszcz; J. Ratajczak; A. Czerwinski…

2008-01-01T23:59:59.000Z

467

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

ion beam etching with SU-8 as mask," Optical Engineering,ion beam etching with SU-8 as mask,” Optical Engineering,

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

468

ALS Visitors  

NLE Websites -- All DOE Office Websites (Extended Search)

Quick Facts Quick Facts ALS Visitors Print ALS staff members host a variety of scientific, educational, government, and community-related tours each month. November 2013 poneman U.S. Deputy Secretary of Energy Daniel Poneman visited Berkeley Lab on Friday, Nov. 15, during a brief stay in the Bay Area. Glenn Mara of the University of California Office of the President and Aundra Richards of the DOE Berkeley Site Office joined Deputy Laboratory Director Horst Simon's welcome. They updated Poneman on the lab's future initiatives and current capital projects and heard briefings on cyber security, computing, and the Joint BioEnergy Institute. As second-in-command at DOE, Poneman is responsible for assisting the Secretary of Energy in the management and operations of the agency and acting on his behalf when necessary.During his tour of the ALS, Poneman (right) spoke with Ken Goldberg (Materials Sciences Division) at the CXRO beamline.

469

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

470

Vacancy association energy in scandium doped ceria: 45Sc MAS NMR and 2D exchange spectroscopy study  

Science Journals Connector (OSTI)

Abstract Oxygen vacancy exchange between Sc ions in 0.5% Sc-doped ceria Sc0.005Ce0.995O0.9975 is investigated by means of 2D exchange spectroscopy (EXSY). 45Sc NMR spectrum of Sc-doped ceria contains two peaks—one corresponding to Sc ions coupled with an oxygen vacancy (Sc-7), and the other corresponding to Sc ions in a regular lattice site surrounded by eight oxygen ions (Sc-8). The vacancy exchange between these two Sc sites generates the cross-peaks in the EXSY spectrum. Relative amplitudes of the cross-peaks provide direct values of the exchange frequency at a given temperature. Arrhenius analysis of the exchange frequency gives the activation energy Ea = 1.18 eV for the vacancy hopping between Sc sites. Most of this energy barrier is due to association energy which binds the vacancy to Sc3 +. Large dopant–vacancy association energy in Sc doped ceria is demonstrated by 45Sc NMR spectrum of La/Sc doubly doped sample, ScxLaxCe1 ? 2xO2 ? x, x = 0.005, where the only line of Sc-7 site shows that all vacancies are bound by Sc3 + ions.

Reio Pőder; Juhan Subbi; Helgi Kooskora; Ivo Heinmaa

2014-01-01T23:59:59.000Z

471

Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction  

SciTech Connect

We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7?dB for 2?V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields <5?nF/cm{sup 2}, which shows a strong possibility for high-speed applications with a broad area device.

Seyedi, M. A., E-mail: seyedi@usc.edu; Yao, M.; O'Brien, J.; Dapkus, P. D. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States)] [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Wang, S. Y. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States) [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, California 95064, USA and NASA Ames Research Center, Moffett Field, California 94035 (United States)

2013-12-16T23:59:59.000Z

472

Identification of the gallium vacancy-oxygen pair defect in GaN  

SciTech Connect

Cation vacancies like V{sub Ga}, V{sub Al} and their complexes with oxygen are predicted to be abundant in III-nitrides and to play an important role in nonradiative recombination. Appearing in triple or double negatively charged states, they are not paramagnetic and have not so far been detected by magnetic resonance even under illumination. In this Brief Report, we demonstrate an efficient way to make cation vacancy defects in GaN detectable by electron paramagnetic resonance and present our identification of the V{sub Ga}O{sub N} pair in GaN which is the model material for the III-nitrides and their alloys.

Son, N. T.; Hemmingsson, C. G.; Janzen, E. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Paskova, T.; Evans, K. R. [Kyma Technologies Inc., 8829 Midway West Road, Raleigh, North Carolina 27617 (United States); Usui, A. [R and D Division, Furukawa Co., Ltd., Tsukuba, Ibaraki 305-0856 (Japan); Morishita, N.; Ohshima, T. [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Isoya, J. [Graduate School of Library, Information and Media Studies, University of Tsukuba, Tsukuba, Ibaraki 305-8550 (Japan); Monemar, B. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Nanometer Structure Consortium, Lund University, P.O. Box 118, S-221 00 Lund (Sweden)

2009-10-15T23:59:59.000Z

473

Workshop Reports | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Workshop Reports Workshop Reports High Energy Physics (HEP) HEP Home About Research Snowmass / P5 Planning Process Intensity Frontier Cosmic Frontier Theoretical Physics Advanced Technology R&D Accelerator R&D Stewardship Mission Background HEP Accelerator R&D Expertise Connecting Accelerator R&D to User Needs Workshop Reports Research Highlights .pdf file (13.1MB) Questions for the Universe Accomplishments Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » Accelerator R&D Stewardship Workshop Reports

474

Funding Opportunities | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Funding Opportunities Funding Opportunities High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Closed Funding Opportunity Announcements (FOAs) Closed Lab Announcements Award Search Peer Merit / Review Policies Early Career Research Opportunities in High Energy Physics Graduate Fellows in High Energy Theory Guidelines Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » Funding Opportunities Print Text Size: A A A Subscribe FeedbackShare Page The Following is a list of funding opportunities in the Office of High Energy Physics (HEP). Not all Funding Opportunity Announcements (FOA) are

475

Award Search | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Award Search Award Search Basic Energy Sciences (BES) BES Home About Research Facilities Science Highlights Benefits of BES Funding Opportunities Closed Funding Opportunity Announcements (FOAs) Closed Lab Announcements Award Search Peer Review Policies EFRCs FOA Applications from Universities and Other Research Institutions Construction Review EPSCoR DOE Office of Science Graduate Fellowship (DOE SCGF) External link Early Career Research Program Basic Energy Sciences Advisory Committee (BESAC) News & Resources Contact Information Basic Energy Sciences U.S. Department of Energy SC-22/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3081 F: (301) 903-6594 E: sc.bes@science.doe.gov More Information » Funding Opportunities Award Search Print Text Size: A A A

476

2012 Annual Workforce Analysis and Staffing Plan Report - SC HQ  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Washington, DC 20585 Washington, DC 20585 MEMORANDUM TO KAREN L. BOARDMAN CHAIRPERSON FEDERAL TECHNICAL CAP ABILITY PANEL FROM: 1osEPH A. MCBREA a wi.~ '/t'f // c. DEPUTY DIRECT FOR FIELD OPE~ TIONS OFFICE OF SCIE CE SUBJECT: Annual Workforce Ail ysis and Staffing Plan Report for Calendar Year 2012 In response to your memo dated October 24, 2012, enclosed is the Office of Science (SC) Headquarters Workforce Analysis and Staffing Plan Report for Calendar Year 2012. The subject report was prepared in accordance with your guidance and represents the necessary resources required to provide oversight of Building 325 at Pacific Northwest National Laboratory, the only defense nuclear facility overseen by SC-Headquarters. If you have any questions, please contact me, or you may contact Carol Sohn at

477

2011 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

1 1 Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources ASCR Discovery Monthly News Roundup 2012 2011 2010 2009 2008 News Archives ASCR Program Documents ASCR Workshops and Conferences ASCR Presentations 100Gbps Science Network Related Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » Monthly News Roundup 2011 Print Text Size: A A A RSS Feeds FeedbackShare Page 2011 MONTHLY NEWS ROUNDUP 2011: January | February | March | April | May | June | July | August |

478

Organizational History | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Organizational Organizational History Basic Energy Sciences (BES) BES Home About Staff Organization Chart .pdf file (51KB) BES Budget BES Committees of Visitors Directions Jobs Organizational History Germantown Natural History President Kennedy's AEC Briefings Research Facilities Science Highlights Benefits of BES Funding Opportunities Basic Energy Sciences Advisory Committee (BESAC) News & Resources Contact Information Basic Energy Sciences U.S. Department of Energy SC-22/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3081 F: (301) 903-6594 E: sc.bes@science.doe.gov More Information » About Organizational History Print Text Size: A A A RSS Feeds FeedbackShare Page The Basic Energy Sciences (BES) organization was formed in June 1977. The origins of the federal research programs that became BES, however, are

479

WDTS Budget | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Budget Budget Workforce Development for Teachers and Scientists (WDTS) WDTS Home About Organization Chart .pdf file (24KB) Education Links WDTS Budget WDTS Committees of Visitors Jobs Science Undergraduate Laboratory Internships (SULI) Community College Internships (CCI) DOE Office of Science Graduate Fellowship (SCGF) Program External link Albert Einstein Distinguished Educator Fellowship (AEF) Program Visiting Faculty Program (VFP) at DOE Laboratories DOE National Science Bowl® (NSB) Laboratory Equipment Donation Program (LEDP) Outreach Contact Information Workforce Development for Teachers and Scientists U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-8842 F: (202) 586-0019 E: sc.wdts@science.doe.gov

480

FES Presentations | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Presentations Presentations Fusion Energy Sciences (FES) FES Home About Research Facilities Science Highlights Benefits of FES Funding Opportunities Fusion Energy Sciences Advisory Committee (FESAC) News & Resources Workshop Reports FES Presentations FES Program Documents Contact Information Fusion Energy Sciences U.S. Department of Energy SC-24/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4941 F: (301) 903-8584 E: sc.fes@science.doe.gov More Information » News & Resources FES Presentations Print Text Size: A A A RSS Feeds FeedbackShare Page Presenter Title/Subject/Organization Date/Link Dr. Edmund Synakowski Presentation delivered by Dr. Edmund Synakowski for the University Fusion Association Evening Session at the annual APS-DPP meeting on November 11, 2013 in Denver, CO. November 11, 2013 .pdf file (4.9MB)

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

February | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

February February Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources ASCR Discovery Monthly News Roundup 2012 2011 2010 2009 2008 News Archives ASCR Program Documents ASCR Workshops and Conferences ASCR Presentations 100Gbps Science Network Related Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » 2010 February Print Text Size: A A A RSS Feeds FeedbackShare Page ASCR Monthly Computing News Report - February 2010 2010: January | February | March | April | May | June | July | August |

482

Directions | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Directions Directions Advanced Scientific Computing Research (ASCR) ASCR Home About Staff Organization Chart .pdf file (85KB) ASCR Budget ASCR Committees of Visitors Directions Jobs Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » About Directions Print Text Size: A A A RSS Feeds FeedbackShare Page Directions to the Office of Advanced Scientific Computing and Research at DOE at Germantown, MD From Washington Dulles International Airport: External link

483

Transcribed Media | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Home Home Transcribed Media SC Home About ASCR HEP SBIR & STTR WDTS Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 Print Text Size: A A A RSS Feeds FeedbackShare Page SC Home 2012 A Flight Through the Universe, by the Sloan Digital Sky Survey Behind the Scenes at Berkeley Lab Science Lecture Series: Dr. Goyal Enrico Fermi Award Ceremony The Secretary and the Scientists The Building Blocks of a Detector for Nature's Building Blocks Ernest Orlando Lawrence Award Ceremony LBNL Computational Research and Theory Facility Groundbreaking Science Lecture Series: Higgs Boson, Dr. Incandela Dr. Perlmutter at DOE A Swell Electrode LNMO Nanoparticle 2011 Carbon Exchange Construction of the Dark Energy Camera

484

Exascale Challenges | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Scientific Scientific Discovery through Advanced Computing (SciDAC) » Exascale Challenges Advanced Scientific Computing Research (ASCR) ASCR Home About Research Applied Mathematics Computer Science Next Generation Networking Scientific Discovery through Advanced Computing (SciDAC) Co-Design SciDAC Institutes Computational Science Graduate Fellowship (CSGF) ASCR SBIR-STTR Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » Scientific Discovery through Advanced Computing (SciDAC)

485

Databases | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Databases Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Funding Opportunities Nuclear Science Advisory Committee (NSAC) News & Resources NP Workforce Survey Results .pdf file (258KB) Links Databases Workshop Reports Nuclear Physics Related Brochures and Videos Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E: sc.np@science.doe.gov More Information » News & Resources Databases Print Text Size: A A A RSS Feeds FeedbackShare Page Databases / Preprints Preprints Los Alamos Repository For Theory Preprints External link Los Alamos Repository For Experimental Preprints External link Nuclear Physics Databases

486

Grants Process | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Grants Process Grants Process Grants & Contracts Support Grants & Contracts Support Home About Funding Opportunity Announcements (FOAs) DOE National Laboratory Announcements Grants Process Grants Policy and Guidance FAQs Resources Contract Information Contact Information Grants & Contracts Support U.S. Department of Energy SC-43/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: 301-903-2859 E: sc.grantsandcontracts@science.doe.gov Grants Process Print Text Size: A A A RSS Feeds FeedbackShare Page Step 1: Registration Obtain a DUNS number External link Obtain an EIN number External link Register with the System for Award Management External link Register with FedConnect External link Register with the Federal Funding Accountability and Transparency Act Subaward Reporting System External link

487

Jobs | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Jobs Jobs Grants & Contracts Support Grants & Contracts Support Home About Organization Chart .pdf file (12KB) Jobs Grants/Contracts Differences Federal Agency Proposals Funding Opportunity Announcements (FOAs) DOE National Laboratory Announcements Grants Process Grants Policy and Guidance FAQs Resources Contract Information Contact Information Grants & Contracts Support U.S. Department of Energy SC-43/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: 301-903-2859 E: sc.grantsandcontracts@science.doe.gov About Jobs Print Text Size: A A A Subscribe FeedbackShare Page Current Open Federal Positions The Office of Grants and Contracts Support is located in Germantown, Maryland. All open federal positions listed below are posted on USAJobs.gov External link

488

september | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

September September Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources ASCR Discovery Monthly News Roundup 2012 2011 2010 2009 2008 News Archives ASCR Program Documents ASCR Workshops and Conferences ASCR Presentations 100Gbps Science Network Related Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » 2011 September Print Text Size: A A A RSS Feeds FeedbackShare Page ASCR Monthly Computing News Report - September 2011 2011: January | February | March | April | May | June | July | August |

489

FAQs | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

FAQs FAQs Grants & Contracts Support Grants & Contracts Support Home About Funding Opportunity Announcements (FOAs) DOE National Laboratory Announcements Grants Process Grants Policy and Guidance FAQs Resources Contract Information Contact Information Grants & Contracts Support U.S. Department of Energy SC-43/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: 301-903-2859 E: sc.grantsandcontracts@science.doe.gov FAQs Print Text Size: A A A RSS Feeds FeedbackShare Page Q. Help! I need help! A. The Office of Science has a number of resources available to help you. For help with Please contact The administrative, financial, or regulatory aspects of your award The Contracting Officer or Contracting Specialist identified in the Assistance Agreement

490

July | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

July July Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources ASCR Discovery Monthly News Roundup 2012 2011 2010 2009 2008 News Archives ASCR Program Documents ASCR Workshops and Conferences ASCR Presentations 100Gbps Science Network Related Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » 2008 July Print Text Size: A A A RSS Feeds FeedbackShare Page ASCR Monthly Computing News Report - July 2008 2008: January | Febrary | March | April | May | June | July | August |

491

European Labs | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

European European Labs Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Spinoff Applications SBIR/STTR Applications of Nuclear Science and Technology Funding Opportunities Nuclear Science Advisory Committee (NSAC) News & Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E: sc.np@science.doe.gov More Information » Benefits of NP European Labs Print Text Size: A A A RSS Feeds FeedbackShare Page European User Facilities: Catania National Laboratory of the South External link , Italy CELSIUS Storage Ring at The Svedberg Laboratory External link , Uppsala University, Sweden COSY Cooler Synchrotron External link , Jülich Research Center, Germany

492

Sharlene Weatherwax | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Sharlene Sharlene Weatherwax Biological and Environmental Research (BER) BER Home About Staff Program Contacts Organization Chart .pdf file (172KB) BER Budget BER Committees of Visitors Directions Jobs Research Facilities Science Highlights Benefits of BER Funding Opportunities Biological & Environmental Research Advisory Committee (BERAC) News & Resources Contact Information Biological and Environmental Research U.S. Department of Energy SC-23/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3251 F: (301) 903-5051 E: sc.ber@science.doe.gov More Information » Staff Sharlene Weatherwax Print Text Size: A A A RSS Feeds FeedbackShare Page Associate Director of Science for Biological and Environmental Research Click to enlarge photo. Enlarge Photo

493

ASCR Presentations | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Presentations Presentations Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources ASCR Discovery Monthly News Roundup News Archives ASCR Program Documents ASCR Workshops and Conferences ASCR Presentations 100Gbps Science Network Related Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » News & Resources ASCR Presentations Print Text Size: A A A RSS Feeds FeedbackShare Page SciDAC Futures .pdf file (1.2MB) August 2011 ASCR 2012 Budget Request to Congress .pdf file (2.0MB)

494

august | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

August August Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources ASCR Discovery Monthly News Roundup 2012 2011 2010 2009 2008 News Archives ASCR Program Documents ASCR Workshops and Conferences ASCR Presentations 100Gbps Science Network Related Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » 2