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1

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

2

Mexico FL GA SC AL MS LA TX AR TN TN  

NLE Websites -- All DOE Office Websites (Extended Search)

2005 Hurricanes on the Natural Gas Industry in the Gulf of Mexico Region Mexico FL GA SC AL MS LA TX AR TN TN Katrina - Cumulative wind > 39 mph Katrina - Cumulative wind > 73 mph...

3

AlGaN/GaN-based power semiconductor switches  

E-Print Network (OSTI)

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

4

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures  

Science Conference Proceedings (OSTI)

Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

2012-12-24T23:59:59.000Z

5

Continuous Casting and Product Characterization of Al-Mg-Sc-Zr ...  

Science Conference Proceedings (OSTI)

These improvements lead quaternary Al-Mg-Sc-Zr alloys to be important ... Frequency Modulation Effect on the Solidification of Alloy 718 Fusion Zone.

6

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells  

E-Print Network (OSTI)

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells I. Friel, C online 20 June 2005 An ultraviolet electroabsorption modulator based on AlGaN/GaN quantum wells is demonstrated. Enhanced excitonic absorption in the quantum wells at around 3.48 eV was achieved using

Moustakas, Theodore

7

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

8

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents (OSTI)

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

9

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT  

Science Conference Proceedings (OSTI)

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

Lenka, T. R., E-mail: trlenka@gmail.com; Panda, A. K., E-mail: akpanda62@hotmail.com [National Institute of Science and Technology, Palur Hills (India)

2011-05-15T23:59:59.000Z

10

Issues associated with the metalorganic chemical vapor deposition of ScGaN and YGaN alloys.  

SciTech Connect

The most energy efficient solid state white light source will likely be a combination of individually efficient red, green, and blue LED. For any multi-color approach to be successful the efficiency of deep green LEDs must be significantly improved. While traditional approaches to improve InGaN materials have yielded incremental success, we proposed a novel approach using group IIIA and IIIB nitride semiconductors to produce efficient green and high wavelength LEDs. To obtain longer wavelength LEDs in the nitrides, we attempted to combine scandium (Sc) and yttrium (Y) with gallium (Ga) to produce ScGaN and YGaN for the quantum well (QW) active regions. Based on linear extrapolation of the proposed bandgaps of ScN (2.15 eV), YN (0.8 eV) and GaN (3.4 eV), we expected that LEDs could be fabricated from the UV (410 nm) to the IR (1600 nm), and therefore cover all visible wavelengths. The growth of these novel alloys potentially provided several advantages over the more traditional InGaN QW regions including: higher growth temperatures more compatible with GaN growth, closer lattice matching to GaN, and reduced phase separation than is commonly observed in InGaN growth. One drawback to using ScGaN and YGaN films as the active regions in LEDs is that little research has been conducted on their growth, specifically, are there metalorganic precursors that are suitable for growth, are the bandgaps direct or indirect, can the materials be grown directly on GaN with a minimal defect formation, as well as other issues related to growth. The major impediment to the growth of ScGaN and YGaN alloys was the low volatility of metalorganic precursors. Despite this impediment some progress was made in incorporation of Sc and Y into GaN which is detailed in this report. Primarily, we were able to incorporate up to 5 x 10{sup 18} cm{sup -3} Y atoms into a GaN film, which are far below the alloy concentrations needed to evaluate the YGaN optical properties. After a no-cost extension was granted on this program, an additional more 'liquid-like' Sc precursor was evaluated and the nitridation of Sc metals on GaN were investigated. Using the Sc precursor, dopant level quantities of Sc were incorporated into GaN, thereby concluding the growth of ScGaN and YGaN films. Our remaining time during the no-cost extension was focused on pulsed laser deposition of Sc metal films on GaN, followed by nitridation in the MOCVD reactor to form ScN. Finally, GaN films were deposited on the ScN thin films in order to study possible GaN dislocation reduction.

Koleske, Daniel David; Knapp, James Arthur; Lee, Stephen Roger; Crawford, Mary Hagerott; Creighton, James Randall; Cross, Karen Charlene; Thaler, Gerald

2009-07-01T23:59:59.000Z

11

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

Science Conference Proceedings (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

12

Radiation Hard AlGaN Detectors and Imager  

Science Conference Proceedings (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

13

AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy  

SciTech Connect

The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

C.A. Wang; C.J. Vineis; D.R. Calawa

2002-02-13T23:59:59.000Z

14

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures  

Science Conference Proceedings (OSTI)

GaAsBi/GaAs/AlGaAs separate confinement heterostructures are grown using an asymmetric temperature profile due to the low optimal growth temperature of GaAsBi; the bottom AlGaAs barrier is grown at 610 Degree-Sign C, while the GaAsBi quantum well and the top AlGaAs barrier are grown at 320 Degree-Sign C. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that this approach results in samples with excellent structural and optical properties. The high quality of the low temperature AlGaAs barrier is attributed to the presence of Bi on the surface as indicated by a (1 Multiplication-Sign 3) surface reconstruction persisting throughout the low temperature growth.

Fan Dongsheng; Yu Shuiqing [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Zeng Zhaoquan; Hu Xian; Dorogan, Vitaliy G.; Li Chen; Benamara, Mourad; Hawkridge, Michael E.; Mazur, Yuriy I.; Salamo, Gregory J. [Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Johnson, Shane R. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States); Wang, Zhiming M. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

2012-10-29T23:59:59.000Z

15

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells  

E-Print Network (OSTI)

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells Marcus Eickhoff* and Dieter Suter, nanometer-sized quantum wells possible with excellent sensitivity and selectivity while avoiding.60.-k; 78.55.Cr; 78.67.De Keywords: ODNMR; Pulsed excitation; Quantum well; GaAs 1. Introduction Nuclear

Suter, Dieter

16

Optical injection and coherent control of a ballistic charge current in GaAsAlGaAs quantum wells  

E-Print Network (OSTI)

Optical injection and coherent control of a ballistic charge current in GaAs?AlGaAs quantum wells of Hache´ et al.,2,3 but in this article we report injection into the plane of GaAs/AlGaAs quantum wells specific to quantum wells. Although we expect the underlying physics of injection and control of currents

Sipe,J. E.

17

Free carrier accumulation at cubic AlGaN/GaN heterojunctions  

Science Conference Proceedings (OSTI)

Cubic Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructures were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. A profile of the electrostatic potential across the cubic-AlGaN/GaN heterojunction was obtained using electron holography in the transmission electron microscope. The experimental potential profile indicates that the unintentionally doped layers show n-type behavior and accumulation of free electrons at the interface with a density of 5.1 x 10{sup 11}/cm{sup 2}, about one order of magnitude less than in wurtzite AlGaN/GaN junctions. A combination of electron holography and cathodoluminescence measurements yields a conduction-to-valence band offset ratio of 5:1 for the cubic AlGaN/GaN interface, which also promotes the electron accumulation. Band diagram simulations show that the donor states in the AlGaN layer provide the positive charges that to a great extent balance the two-dimensional electron gas.

Wei, Q. Y.; Li, T.; Huang, J. Y.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Tschumak, E.; Zado, A.; As, D. J. [Department of Physics, Universitaet Paderborn, D-33098 Paderborn (Germany)

2012-04-02T23:59:59.000Z

18

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors  

E-Print Network (OSTI)

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

Lu, Bin

19

Phonon Knudsen flow in GaAs/AlAs superlattices  

DOE Green Energy (OSTI)

The measured in-plane thermal conductivity, {delta}{sub SL} of GaAs/AlAs superlattices with even moderate layer thicknesses are significantly smaller than the weighted average, {delta}{sub l} = 67 W/Km, of the bulk GaAs and AlAs conductivities. One expects a suppression of the thermal conductivity to that of an actual Al{sub 0.5}Ga{sub 0.5}As alloy when the thickness of the GaAs and AlAs layers approaches that of a single monolayer. However, the observed superlattice thermal conductivity remains suppressed even at layer thickness {approx_gt} 10 nm. The low thermal conductivities, and very high mobilities, make n-doped GaAs/AlAs superlattices attractive possibilities for thermoelectric devices. With Molecular-Beam-Epitaxial grown GaAs/AlAs superlattices one can expect the individual GaAs and AlAs layers to be extremely clean. Defect and/or alloy scattering is limited to be near the heterostructure interfaces. The authors estimate the room-temperature phonon mean-free-path to be 42 (22) nm for the longitudinal (transverse) mode and thus comparable to or smaller than the layer thicknesses. Thus they expect an important phonon scattering at the interfaces. They study this phonon scattering at the superlattice interfaces assuming a Knudsen flow characterized by diffusive scattering. The solid curve in the figure shows the Knudsen-flow theory estimated for the superlattice thermal conductivity which shows a significant reduction when the layer thickness is shorter than the estimated phonon mean free paths.

Hyldgaard, P.; Mahan, G.D. [Oak Ridge National Lab., TN (United States). Solid State Div.]|[Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy

1995-09-01T23:59:59.000Z

20

Two-dimensional electron gas in AlGaN/GaN heterostructures  

Science Conference Proceedings (OSTI)

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. {copyright} {ital 1997 American Vacuum Society.}

Li, J.Z.; Lin, J.Y.; Jiang, H.X. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Khan, M.A.; Chen, Q. [APA Optics, Inc., Blaine, Minnesota 55449 (United States)] [APA Optics, Inc., Blaine, Minnesota 55449 (United States)

1997-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures  

E-Print Network (OSTI)

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures, U.S.A. ABSTRACT Characterization of operational AlGaInN heterostructure light emitting diodes (LEDs the device lifetime in a non-destructive mode. INTRODUCTION Group ­ III nitride light emitting diodes (LEDs

Wetzel, Christian M.

22

Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

( gate=nickel)/(barrier=GaN/Al (y) Ga (1?y) N)/(buffer=GaN)/(substrate=SiC ) polarizationinduced high electron mobility transistors (PI-HEMTs) show promise for ultrahigh power microwave amplification. The polarization fields in these Ga-face

Lester F. Eastman

1999-01-01T23:59:59.000Z

23

AlP/GaP distributed Bragg reflectors  

SciTech Connect

Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

2013-07-15T23:59:59.000Z

24

AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE  

SciTech Connect

An AlGaAs/GaAs resonant tunneling diode (RTD) with submicron size was fabricated on {l_brace}111{r_brace} oblique facets of GaAs with selective MBE. The method is based on the fact that a certain facet structure is formed on a patterned substrate in selective MBE because the growth rate depends strongly on the facet structure. The fabrication of a double-barrier structure was attempted on a {l_brace}111{r_brace}B facet. The current-voltage characteristics of the sample showed negative differential resistance at 77K demonstrating that we have achieved an RTD on a submicron facet.

Nishiwaki, T.; Yamaguchi, M.; Sawaki, N. [Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464-8603 (Japan)

2007-04-10T23:59:59.000Z

25

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

Chung, Jinwook W. (Jinwook Will)

2008-01-01T23:59:59.000Z

26

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

We have investigated the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors using atomic force microscopy and scanning electron microscopy after removing the gate metallization by ...

Makaram, Prashanth

27

Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment  

E-Print Network (OSTI)

Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate ...

Palacios, Tomas

28

AlGaAs diode pumped tunable chromium lasers  

DOE Patents (OSTI)

An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF.sub.6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF.sub.6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.

Krupke, William F. (Pleasanton, CA); Payne, Stephen A. (Castro Valley, CA)

1992-01-01T23:59:59.000Z

29

Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor  

SciTech Connect

A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ~10 were obtained at 300 degree C.

Abernathy, C.R.; Baca, A.G.; Cao, X.A.; Cho, H.; Dang, G.T.; Donovan, S.M.; Han, J.; Jung, K.B.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Wilson, R.G.; Zhang, A.P.; Zhang, L

1999-03-16T23:59:59.000Z

30

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED  

Science Conference Proceedings (OSTI)

We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm{sup 2}V{sup -1}s{sup -1} at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affect the low temperature electron mobility in AlGaN/GaN heterostructures. Growth at the transition towards Ga droplet formation produced the best results. A quantitative analysis of the magnetoresistance confirmes scattering at dislocations as the dominant scattering process at low temperature.

Broxtermann, D.; Sivis, M.; Malindretos, J.; Rizzi, A. [IV. physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

2012-03-15T23:59:59.000Z

31

Evaluation of defects and degradation in GaAs-GaAlAs wafers using transmission cathodoluminescence  

Science Conference Proceedings (OSTI)

A large number of GaAs substrates GaAlAs double-heterostructure (DH) wafers, and high-radiance GaAlAs DH light-emitting diodes (LEDS) were evaluated using transmission cathodoluminescence (TCL). We show that only epitaxial wafers with a high defect density as revealed by TCL readily develop dark line defects (DLDs) with current injection, optical excitation, or electron beam excitation. Furthermore, in agreement with the previous work, the electron-beam-induced DLDs originate at dislocations and their growth requires minority-carrier injection. Based on these results, it is inferred that TCL can serve as a nondestructive screening technique for the selection of materials that produces a high yield of reliable LEDs.

Chin, A.K.; Keramidas, V.G.; Johnston, W.D. Jr.; Mahajan, S.; Roccasecca, D.D.

1980-02-01T23:59:59.000Z

32

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures  

Science Conference Proceedings (OSTI)

Double pulse doped ({delta}-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm{sup 2}/(V s) at sheet electron densities of 3.00 x 10{sup 12} and 3.36 x 10{sup 12} cm{sup -2}, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A. [Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)

2010-07-15T23:59:59.000Z

33

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network (OSTI)

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP, or (Al,Ga)As, which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically hole-mediated ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Mn-doped Ga(As,P) is also favorable, as compared to (Al,Ga)As, with respect to the formation of carrier and moment compensating interstitial Mn impurities. In (Ga,Mn) (As,P) we find a marked decrease of the partial concentration of these detrimental impurities with increasing P content.

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

34

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. (Research Triangle Inst., Research Triangle Park, NC (United States))

1993-01-01T23:59:59.000Z

35

Fine structure of AlN/AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering  

SciTech Connect

We report the detailed structure analysis of our AlN/AlGaN superlattice (SL) grown by pulsed atomic-layer epitaxy (PALE) for dislocation filtering. Due to the nature of PALE, the AlGaN well material itself in the SL was found to be composed actually of an Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N short-period superlattice (SPSL), with the periodicity of 15.5 A ({approx_equal}6 monolayer), determined consistently from high-resolution x-ray diffraction and high-resolution transmission electron microscopy measurements. The SPSL nature of the AlGaN layers is believed to benefit from the AlN/AlGaN SL's coherent growth, which is important in exerting compressive strain for the thick upper n-AlGaN film, which serves to eliminate cracks. Direct evidence is presented which indicates that this SL can dramatically reduce the screw-type threading dislocation density.

Sun, W.H.; Zhang, J.P.; Yang, J.W.; Maruska, H.P.; Khan, M. Asif; Liu, R.; Ponce, F.A. [Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208 (United States); Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287 (United States)

2005-11-21T23:59:59.000Z

36

M4, Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers  

Science Conference Proceedings (OSTI)

On-axis reciprocal space mapping of the graded AlGaN showed tilt at each interface associated ..... New Concepts and Materials for Solar Power Conversion

37

Structure and Composition Peculiarities of GaN/AlN Multiple ...  

Science Conference Proceedings (OSTI)

Thickness of AlN and GaN layers in MQWs (multiple quantum wells) were ... InAs Quantum Dots by Ballistic Electron Emission Microscopy and Spectroscopy.

38

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

39

Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT  

Science Conference Proceedings (OSTI)

A new AlGaN/GaN-based high electron mobility transistor (HEMT) is proposed and its micro-wave characteristics are discussed by introducing a nanoscale AlN or InN layer to study the potential improvement in their high frequency performance. The 2DEG transport mechanism including various sub-band calculations for both (Al,In) N-based HEMTs are also discussed in the paper. Apart from direct current characteristics of the proposed HEMT, various microwave parameters such as transconductance, unit current gain (h{sub 21} = 1) cut-off frequency (f{sub t}), high power-gain frequency (f{sub max}). Masons available/stable gain and masons unilateral gain are also discussed for both devices to understand its suitable deployment in microwave frequency range.

Lenka, T. R., E-mail: trlenka@gmail.com; Panda, A. K., E-mail: akpanda62@hotmail.com [National Institute of Science and Technology (India)

2011-09-15T23:59:59.000Z

40

Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN  

DOE Green Energy (OSTI)

Etch rates up to 7,000 {angstrom}/min. for GaN are obtained in Cl{sub 2}/H{sub 2}/Ar or BCl{sub 3}/Ar ECR discharges at 1--3mTorr and moderate dc biases. Typical rates with HI/H{sub 2} are about a factor of three lower under the same conditions, while CH{sub 4}/H{sub 2} produces maximum rates of only {approximately}2,000 {angstrom}/min. The role of additives such as SF{sub 6}, N{sub 2}, H{sub 2} or Ar to the basic chlorine, bromine, iodine or methane-hydrogen plasma chemistries are discussed. Their effect can be either chemical (in forming volatile products with N) or physical (in breaking bonds or enhancing desorption of the etch products). The nitrides differ from conventional III-V`s in that bond-breaking to allow formation of the etch products is a critical factor. Threshold ion energies for the onset of etching of GaN, InGaN and InAlN are {ge} 75 eV.

Pearton, S.J.; Vartuli, C.B.; Lee, J.W.; Donovan, S.M.; MacKenzie, J.D.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States); Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); McLane, G.F. [Army Research Lab., Fort Monmouth, NJ (United States); Ren, F. [AT and T Bell Labs., Murray Hill, NJ (United States)

1996-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics  

Science Conference Proceedings (OSTI)

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO"2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium lamp ... Keywords: GaN, HEMT, MQW, Photo-chemical vapor deposition, SiO 2

Kai-Hsuan Lee; Ping-Chuan Chang; Shoou-Jinn Chang

2013-04-01T23:59:59.000Z

42

GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP  

Science Conference Proceedings (OSTI)

We report on the epitaxial growth of an AlSb/InAs heterostructure on a (001) GaP substrate. We investigate the conditions for the most efficient relaxation of GaSb islands on GaP. In particular, we show that the GaP surface treatment and the growth temperature are crucial for the formation of a two-dimensional periodic array of 90 deg. misfit dislocations at the episubstrate interface. With this relaxation process, an AlSb/InAs heterostructure exhibiting a room temperature mobility of 25 500 cm{sup 2} V{sup -1} s{sup -1} on GaP is demonstrated. This result paves the way to the integration of Sb-based devices on Si substrates through the use of GaP/Si templates.

El Kazzi, S.; Desplanque, L.; Coinon, C.; Wallart, X. [Institut d'Electronique, de Microelectronique, et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d'Ascq Cedex (France); Wang, Y.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Marechal Juin, 14050 Caen Cedex (France)

2010-11-08T23:59:59.000Z

43

CC2, Two-Dimensional Electron Gas in In X Al 1-X N/Aln/GaN ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

44

K7, Self-Assembled GaN/AlN Nanowire Superlattices on Si toward ...  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

45

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates  

E-Print Network (OSTI)

5221, 34095 Montpellier, France E-mail: pmc53@cam.ac.uk Received October 12, 2012; accepted November 22, 2012; published online May 20, 2013 This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various...

Corfdir, Pierre; Dussaigne, Amlie; Teisseyre, Henryk; Suski, Tadeusz; Grzegory, Izabella; Lefebvre, Pierre; Giraud, Etienne; Shahmohammadi, Mehran; Phillips, Richard; Ganire, Jean-Daniel; Grandjean, Nicolas; Deveaud, Benot

46

Preparation of Al-Sc Master Alloy by Aluminothermic Reaction with ...  

Science Conference Proceedings (OSTI)

To achieve larger Sc recovery rate, the composition and pretreatment of the molten salt are studied. The optimum molten salt is obtained by melting together

47

Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells  

Science Conference Proceedings (OSTI)

Exciton photoluminescence spectra, photoluminescence excitation spectra, and magnetophotoluminescence spectra of single (GaAs/AlGaAs/ZnMnSe) and double (GaAs/AlGaAs/ZnSe/ZnCdMnSe) heterovalent quantum wells formed by molecular beam epitaxy are studied. It is shown that the exciton absorption spectrum of such quantum wells mainly reproduces the resonant exciton spectrum expected for usual quantum wells with similar parameters, while the radiative exciton recombination have substantial distinctions, in particular the additional localization mechanism determined by defects generated by heterovalent interface exists. The nature of these localization centers is not currently clarified; their presence leads to broadening of photoluminescence lines and to an increase in the Stokes shift between the peaks of luminescence and absorption, as well as determining the variation in the magnetic g factor of bound exciton complexes.

Toropov, A. A., E-mail: toropov@beam.ioffe.ru; Kaibyshev, V. Kh.; Terent'ev, Ya. V.; Ivanov, S. V.; Kop'ev, P. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2011-02-15T23:59:59.000Z

48

SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors  

Science Conference Proceedings (OSTI)

Hydrothermally grown SnO2 was integrated with AlGaN/GaN high electron mobility transistor (HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO2 was improved after annealing at 400 C. The grain growth kinetics of the SnO2 nanomaterials, together with the O2 gas sensing properties and sensing mechanism of the SnO2 gated HEMT sensors were investigated. Detection of 1% oxygen in nitrogen at 100 C was possible. A low operation temperature and low power consumption oxygen sensor can be achieved by combining the SnO2 films with the AlGaN/GaN HEMT structure

Hung, S.T. [Feng Chia University, Taichung, Taiwan; Chung, Chi-Jung [Feng Chia University, Taichung, Taiwan; Chen, Chin Ching [University of Florida, Gainesville; Lo, C. F. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

49

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE  

NLE Websites -- All DOE Office Websites (Extended Search)

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE Identification of the Parasitic Chemical Reactions during AlGaN OMVPE by J. R. Creighton, M. E. Coltrin, and W. G. Breiland Motivation-GaN and AlGaN alloys are ex- tremely important materials with widespread applications for optoelectronics (e.g. solid state lighting) and high power electronics. Or- ganometallic vapor phase epitaxy (OMVPE) is the primary deposition methodology, but it suf- fers from several growth chemistry anomalies. Growth rate and alloy composition are often a sensitive function of temperature and other reac- tor variables. These factors make the AlGaN OMVPE process difficult to control and in- crease the cost of the material. Conventional wisdom has been that the non-ideal OMVPE behavior is due to parasitic "pre-reactions" be-

50

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network (OSTI)

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

51

Microstructure and dielectric properties of piezoelectric magnetron sputtered w-Sc{sub x}Al{sub 1-x}N thin films  

Science Conference Proceedings (OSTI)

Piezoelectric wurtzite Sc{sub x}Al{sub 1-x}N (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al{sub 2}O{sub 3}(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 deg. C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 deg. C, the crystal structure is poor and leakage current is high. Transmission electron microscopy with energy dispersive x-ray spectroscopy mapping shows a mass separation into ScN-rich and AlN-rich domains for x {>=} 0.2 when substrate temperature is increased from 400 to 800 deg. C. The piezoelectric response of epitaxial Sc{sub x}Al{sub 1-x}N films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.

Zukauskaite, Agne; Wingqvist, Gunilla; Palisaitis, Justinas; Jensen, Jens; Persson, Per O. A.; Birch, Jens; Hultman, Lars [Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, SE-581 83 Linkoeping (Sweden); Matloub, Ramin; Muralt, Paul [Ceramics Laboratory, Ecole Polytechnique Federale de Lausanne EPFL, Lausanne (Switzerland); Kim, Yunseok [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

2012-05-01T23:59:59.000Z

52

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN  

Science Conference Proceedings (OSTI)

We investigate, via time-resolved photoluminescence, the temperature-dependence of charge carrier recombination mechanisms in nonpolar (Al,Ga)N/GaN single quantum wells (QWs) grown via molecular beam epitaxy on the a-facet of bulk GaN crystals. We study the influence of both QW width and barrier Al content on the dynamics of excitons in the 10-320 K range. We first show that the effective lifetime of QW excitons {tau} increases with temperature, which is evidence that nonradiative mechanisms do not play any significant role in the low-temperature range. The temperature range for increasing {tau} depends on the QW width and Al content in the (Al,Ga)N barriers. For higher temperatures, we observe a reduction in the QW emission lifetime combined with an increase in the decay time for excitons in the barriers, until both exciton populations get fully thermalized. Based on analysis of the ratio between barrier and QW emission intensities, we demonstrate that the main mechanism limiting the radiative efficiency in our set of samples is related to nonradiative recombination in the (Al,Ga)N barriers of charge carriers that have been thermally emitted from the QWs.

Corfdir, P.; Dussaigne, A.; Giraud, E.; Ganiere, J.-D.; Grandjean, N.; Deveaud-Pledran, B. [Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Teisseyre, H. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Suski, T.; Grzegory, I. [Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Lefebvre, P. [Laboratoire Charles Coulomb - UMR5221 - CNRS - Universite Montpellier 2, 34095 Montpellier (France)

2012-02-01T23:59:59.000Z

53

Strain relaxation in GaN/Al{sub x}Ga{sub 1-x}N superlattices grown by plasma-assisted molecular-beam epitaxy  

SciTech Connect

We have investigated the misfit relaxation process in GaN/Al{sub x}Ga{sub 1-x}N (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 10{sup 8} cm{sup -2} to 2 x 10{sup 9} cm{sup -2}. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 10{sup 10} cm{sup -2}. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

Kotsar, Y.; Bellet-Amalric, E.; Das, A.; Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 Rue des Martyrs, 38054 Grenoble cedex 9 (France); Doisneau, B. [SIMaP, Grenoble INP, Domaine Universitaire, BP 75, 38402 Saint Martin d'Heres (France); Sarigiannidou, E. [LMGP, Grenoble INP, 3 Parvis Louis Neel, BP 257, 38016 Grenoble cedex 1 (France)

2011-08-01T23:59:59.000Z

54

AlGaAsSb buffer/barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability  

Science Conference Proceedings (OSTI)

Keywords: AlGaAsSb, Hall elements, InAs, Sb, buffer/barriers, deep quantum well, field effect transistors, reliability

S. Miya; S. Muramatsu; N. Kuze; K. Nagase; T. Iwabuchi; A. Ichii; M. Ozaki; I. Shibasaki

1996-03-01T23:59:59.000Z

55

High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers  

Science Conference Proceedings (OSTI)

We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm{sup 2}/V s. The 2DEG density was tunable at 0.4-3.7x10{sup 13}/cm{sup 2} by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2010-11-29T23:59:59.000Z

56

L1, Formation of Structural Defects in AlGaN/GaN High Electron ...  

Science Conference Proceedings (OSTI)

Transmission electron microscope (TEM) cross sectional image has shown that electrical degradation is closely related to structural damage in the GaN cap and ...

57

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network (OSTI)

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

58

Metalorganic Vapor-Phase Epitaxial Growth and Characterization of Quaternary AlGaInN  

SciTech Connect

In this letter we report the growth (by MOVPE) and characterization of quaternary AlGaInN. A combination of PL, high-resolution XRD, and RBS characterizations enables us to explore and delineate the contours of equil-emission energy and lattice parameters as functions of the quaternary compositions. The observation of room temperature PL emission as short as 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GdnN MQW heterostructures have also been grown; both x-ray diffraction and PL measurement suggest the possibility of incorporating this quaternary into optoelectronic devices.

BANAS, MICHAEL ANTHONY; CRAWFORD, MARY H.; FIGIEL, JEFFREY J.; HAN, JUNG; LEE, STEPHEN R.; MYERS JR., SAMUEL M.; PETERSON, GARY D.

1999-09-27T23:59:59.000Z

59

Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices  

Science Conference Proceedings (OSTI)

Reverse-bias stress testing has been applied to a large set of more than 50 AlGaN/GaN high electron mobility transistors, which were fabricated using the same process but with different values of the AlN mole fraction and the AlGaN barrier-layer thickness, as well as different substrates (SiC and sapphire). Two sets of devices having different defect types and densities, related to the different growth conditions and the choice of nucleation layer, were also compared. When subjected to gate drain (or gate-to-drain and source short-circuited) reverse-bias testing, all devices presented the same time-dependent failure mode, consisting of a significant increase in the gate leakage current. This failure mechanism occurred abruptly during step-stress experiments when a certain negative gate voltage, or critical voltage, was exceeded or, during constant voltage tests, at a certain time, defined as time to breakdown. Electroluminescence (EL) microscopy was systematically used to identify localized damaged areas that induced an increase of gate reverse current. This current increase was correlated with the increase of EL intensity, and significant EL emission during tests occurred only when the critical voltage was exceeded. Focused-ion-beam milling produced cross-sectional samples suitable for electron microscopy observation at the sites of failure points previously identified by EL microscopy. In highdefectivity devices, V-defects were identified that were associated with initially high gate leakage current and corresponding to EL spots already present in untreated devices. Conversely, identification of defects induced by reverse-bias testing proved to be extremely difficult, and only nanometer-size cracks or defect chains, extending vertically from the gate edges through the AlGaN/GaN heterojunction, were found. No signs of metal/semiconductor interdiffusion or extended defective areas were visible.

Cullen, David A [ORNL; Smith, David J [Arizona State University; Passaseo, Adriana [Consiglio Nazionale delle Ricerche; Tasco, Vittorianna [Consiglio Nazionale delle Ricerche; Stocco, Antonio [Universita di Padova; Meneghini, Matteo [Universita di Padova; Meneghesso, Gaudenzio [Universita di Padova; Zanoni, Enrico [Universita di Padova

2013-01-01T23:59:59.000Z

60

Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures  

Science Conference Proceedings (OSTI)

An increase in the electron mobility and drift velocity in high electric fields in quantum wells of selectively doped InAlAs/InGaAs/InAsAs heterostructures is obtained experimentally via controlling the composition of semiconductors forming the interface. The electron mobility at the interface in the In{sub 0.8}Ga{sub 0.2}As/In{sub 0.7}Al{sub 0.3}As metamorphic structure with a high molar fraction of In (0.7-0.8) is as high as 12.3 Multiplication-Sign 10{sup 3} cm{sup 2} V{sup -1} s{sup -1} at room temperature. An increase in the electron mobility by a factor of 1.1-1.4 is attained upon the introduction of thin (1-3 nm) InAs layers into a quantum well of selectively doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures. A maximal drift velocity attains 2.5 Multiplication-Sign 10{sup 7} cm/s in electric fields of 2-5 kV/cm. The threshold field F{sub th} for the intervalley {Gamma}-L electron transfer (the Gunn effect) in the InGaAs quantum well is higher than in the bulk material by a factor of 2.5-3. The effect of two- to threefold decrease in the threshold field F{sub th} in the InGaAs quantum well is established upon increasing the molar fraction of In in the InAlAs barrier, as well as upon the introduction of thin InAs inserts into the InGaAs quantum well.

Vasil'evskii, I. S., E-mail: pozela@pfi.lt; Galiev, G. B.; Klimov, E. A. [MEPHI National Nuclear Research University (Russian Federation); Pozela, K.; Pozela, J.; Juciene, V.; Suziedelis, A.; Zurauskiene, N.; Kersulis, S.; Stankevic, V. [Center for Physical Sciences and Technology, Semiconductor Physics Institute (Lithuania)

2011-09-15T23:59:59.000Z

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

62

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

Fainman, "Influence of chlorine on etched sidewalls inFainman, Influence of chlorine on etched sidewalls inthe RIBE of GaAs with chlorine (Cl 2 ), ion beam sputtering

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

63

Optical stability of shape-engineered InAs/InAlGaAs quantum dots  

SciTech Connect

The optical properties of shape-engineered InAs/InAlGaAs quantum dots (SEQDs) were investigated by temperature-dependent and excitation-power-dependent photoluminescence (PL) spectroscopy and compared with those of the conventionally grown InAs QDs (CQDs). The emission wavelength of the InAs/InAlGaAs SEQDs at 240 K was redshifted by 18 nm from that at 15 K, which was relatively smaller than that of the InAs CQDs (97 nm). The PL yield at 240 K was reduced to 1/86 and 1/65 of that measured at 15 K for the InAs CQDs and the InAs/InAlGaAs SEQDs, respectively. The emission wavelength for the InAs CQDs was blueshifted by 76 nm with increasing excitation power from 0.56 to 188 mW, compared to only by 7 nm for the InAs/InAlGaAs SEQDs. These results indicated that the InAs/InAlGaAs SEQDs were optically more stable than the InAs CQDs mainly due to the enhancement of the carrier confinement in the vertical direction and the improvement in the size uniformity.

Yang, Youngsin; Jo, Byounggu; Kim, Jaesu; Lee, Cheul-Ro; Kim, Jin Soo [Division of Advanced Materials Engineering, Research Center of Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju, Chonbuk 561-756 (Korea, Republic of); Oh, Dae Kon [Electronics and Telecommunication Research Institute (ETRI), Daejeon 305-350 (Korea, Republic of); Kim, Jong Su [Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Leem, Jae-Young [School of Nano Engineering, Inje University, Gimhae 621-749 (Korea, Republic of)

2009-03-01T23:59:59.000Z

64

Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer  

Science Conference Proceedings (OSTI)

We investigate the strain properties of GaN films grown by plasma-assisted molecular beam epitaxy on Si(110) substrates. It is found that the strain of the GaN film can be converted from a tensile to a compressive state simply by inserting a thin AlN/GaN superlattice structure (SLs) within the GaN film. The GaN layers seperated by the SLs can have different strain states, which indicates that the SLs plays a key role in the strain modulation during the growth and the cooling down processes. Using this simple technique, we grow a crack-free GaN film exceeding 2-{mu}m-thick. The realization of the compressively strained GaN film makes it possible to grow thick GaN films without crack generation on Si substrates for optic and electronic device applications.

Shen, X. Q.; Takahashi, T.; Kawashima, H.; Ide, T.; Shimizu, M. [Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568 (Japan)

2012-07-16T23:59:59.000Z

65

Al composition dependence of breakdown voltage in Al{sub x}Ga{sub 1-x}N Schottky rectifiers  

SciTech Connect

Planar geometry, lateral Schottky rectifiers were fabricated on high resistivity Al{sub x}Ga{sub 1-x}N (x=0-0.25) epitaxial layers grown on sapphire substrates. The reverse breakdown voltages of unpassivated devices increased with Al composition, varying from 2.3 kV for GaN to 4.3 kV for Al{sub 0.25}Ga{sub 0.75}N. The reverse current-voltage (I-V) characteristics showed classical Shockley-Read-Hall recombination as the dominant mechanism, with I{proportional_to}V{sup 0.5}. The reverse current density in all diodes was in the range 5-10x10{sup -6} A cm{sup -2} at 2 kV. The use of p{sup +} guard rings was effective in preventing premature edge breakdown and with optimum ring width increased V{sub B} from 2.3 to 3.1 kV in GaN diodes. (c) 2000 American Institute of Physics.

Zhang, A. P. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Dang, G. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Ren, F. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Han, J. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Polyakov, A. Y. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Smirnov, N. B. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Govorkov, A. V. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Redwing, J. M. [Epitronics, Phoenix, Arizona 85027 (United States)] [Epitronics, Phoenix, Arizona 85027 (United States); Cao, X. A. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Pearton, S. J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2000-03-27T23:59:59.000Z

66

Optical modulation at around 1550 nm in a InGaAlAs optical waveguide containing a InGaAs/AlAs resonant tunnelling diode  

E-Print Network (OSTI)

We report electro-absorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrier resonant tunneling diode (DB-RTD). The RTD peak-to-valley transition increases the electric field across the waveguide, which shifts the core material absorption band-edge to longer wavelengths via the Franz-Keldysh effect, thus changing the light-guiding characteristics of the waveguide. Low-frequency characterisation of a device shows modulation up to 28 dB at 1565 nm. When dc biased close to the negative differential conductance (NDC) region, the RTD optical waveguide behaves as an electro-absorption modulator integrated with a wide bandwidth electrical amplifier, offering a potential advantage over conventional pn modulators.

Figueiredo, J M L; Stanley, C R; Ironside, C N; McMeekin, S G; Leite, A M P

1999-01-01T23:59:59.000Z

67

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. [Research Triangle Inst., Research Triangle Park, NC (United States)

1993-01-01T23:59:59.000Z

68

THz laser based on quasi-periodic AlGaAs superlattices  

SciTech Connect

The use of quasi-periodic AlGaAs superlattices as an active element of a quantum cascade laser of terahertz range is proposed and theoretically investigated. A multi-colour emission, having from three to six peaks of optical gain, is found in Fibonacci, Thue-Morse, and figurate superlattices in electric fields of intensity F = 11 - 13 kV cm{sup -1} in the frequency range f = 2 - 4 THz. The peaks depend linearly on the electric field, retain the height of 20 cm{sup -1}, and strongly depend on the thickness of the AlGaAs-layers. (lasers)

Malyshev, K V [N.E. Bauman Moscow State Technical University, Moscow (Russian Federation)

2013-06-30T23:59:59.000Z

69

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas  

SciTech Connect

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2 Multiplication-Sign 10{sup 11} cm{sup -2}) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).

Mak, W. Y.; Sfigakis, F.; Beere, H. E.; Farrer, I.; Griffiths, J. P.; Jones, G. A. C.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom)] [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom); Das Gupta, K. [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom) [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom); Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India); Klochan, O.; Hamilton, A. R. [School of Physics, University of New South Wales, Sydney (Australia)] [School of Physics, University of New South Wales, Sydney (Australia)

2013-03-11T23:59:59.000Z

70

Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation dose on dc characteristics and the reliability of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 109 to 2 1014 cm-2. For the dc characteristics, there was only minimal degradation of saturation drain current (IDSS), transconductance (gm), electron mobility and sheet carrier concentration at doses below 2 1013 cm-2, while the reduction of these parameters were 15%, 9%, 41% and 16.6%, respectively, at a dose of 2 1014 cm-2. At this same dose condition, increases of 37% in drain breakdown voltage (VBR) and of 45% in critical voltage (Vcri) were observed. The improvement of device reliability was attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose.

Liu, L. [University of Florida, Gainesville; Cuervo, C.V. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

71

Harmonic Responses in 2DEG AlGaAs/GaAs HEMT Devices Due to Plasma Wave Interaction  

Science Conference Proceedings (OSTI)

Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, omega{sub p}, lie in the terahertz range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short-channel High-Electron-Mobility Transistor (HEMT) and the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results.

Hashim, A. M.; Alias, Q. I. [Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Kasai, S.; Hasegawa, H. [Research Center for Integrated Quantum Electronics, Hokkaido University North 12 West 8, Sapporo 060-8628 (Japan)

2010-03-11T23:59:59.000Z

72

Temperature dependence and current transport mechanisms in Al{sub x}Ga{sub 1-x}N Schottky rectifiers  

SciTech Connect

GaN and Al{sub 0.25}Ga{sub 0.75}N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage V{sub B} (3.1 kV for GaN; 4.3 kV for AlGaN) displayed a negative temperature coefficient of -6.0{+-}0.4 V K{sup -1} for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100 A cm-2 was {approx}5 V for GaN and {approx}7.5 V for AlGaN. The on-state resistances, R{sub ON}, were 50 m{omega} cm2 for GaN and 75 m{omega} cm2 for AlGaN, producing figures-of-merit (V{sub RB}){sup 2}/R{sub ON} of 192 and 246 MW cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias. (c) 2000 American Institute of Physics.

Zhang, A. P. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Dang, G. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Ren, F. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Han, J. [Sandia National Laboratories, Albuquerque, New Mexico 87195 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87195 (United States); Polyakov, A. Y. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Smirnov, N. B. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Govorkov, A. V. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Redwing, J. M. [Epitronics, Phoenix, Arizona 85027 (United States)] [Epitronics, Phoenix, Arizona 85027 (United States); Cho, H. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Pearton, S. J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2000-06-19T23:59:59.000Z

73

Two-color picosecond experiments on anti-Stokes photoluminescence in GaAs/AlGaAs asymmetric double quantum wells  

E-Print Network (OSTI)

quantum wells S. C. Hohng and D. S. Kima) Department of Physics and Condensed Matter Research Institute in GaAs/AlGaAs asymmetric double quantum wells. Direct evidence for forbidden absorption is shown heterojunctions and asymmetric double quan- tum wells was found and its origin is still being hotly de- bated

Hohng, Sung Chul

74

Method of extracting thermally stable optical signals from a GaAlAs LED source  

SciTech Connect

A self-compensating scheme is described that eliminates the need for temperature control devices employed in many LED-based optical test and measurement instruments to ensure optical signal stability. Thermal behavior of GaAlAs LED sources is exploited to provide an optical wavelength band signal with 0.1%/C power level stability.

Murtaza, G.; Senior, J.M. [Manchester Metropolitan Univ. (United Kingdom). Faculty of Science and Engineering

1995-05-01T23:59:59.000Z

75

Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy  

Science Conference Proceedings (OSTI)

Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A. [RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074 Aachen (Germany); Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich (Germany); Hollaender, B. [Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich (Germany); Forschungszentrum Juelich GmbH, PGI9-IT, 52425 Juelich (Germany); Heuken, M. [RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074 Aachen (Germany); AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany)

2012-11-01T23:59:59.000Z

76

L7, Reduced Self-Heating in AlGaN/GaN HEMTs Using ...  

Science Conference Proceedings (OSTI)

Conference Tools for 2010 Electronic Materials Conference ... Electr. Dev., vol. 48, no. 3, pp. 465, 2001. [2] H. I. Fujishiro et al., Phys. Stat. Sol. (c) 2, no.

77

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors  

SciTech Connect

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-03-10T23:59:59.000Z

78

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

0.00-1.99 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1996 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1996 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: In 1996, consumption of natural gas for agricultural use

79

Pulsed atomic layer epitaxy of quaternary AlInGaN layers  

Science Conference Proceedings (OSTI)

In this letter, we report on a material deposition scheme for quaternary Al{sub x}In{sub y}Ga{sub 1-x--y}N layers using a pulsed atomic layer epitaxy (PALE) technique. The PALE approach allows accurate control of the quaternary layer composition and thickness by simply changing the number of aluminum, indium, and gallium pulses in a unit cell and the number of unit cell repeats. Using PALE, AlInGaN layers with Al mole fractions in excess of 40% and strong room-temperature photoluminescence peaks at 280 nm can easily be grown even at temperatures lower than 800{sup o}C. {copyright} 2001 American Institute of Physics.

Zhang, J.; Kuokstis, E.; Fareed, Q.; Wang, H.; Yang, J.; Simin, G.; Asif Khan, M.; Gaska, R.; Shur, M.

2001-08-13T23:59:59.000Z

80

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] Passivation  

E-Print Network (OSTI)

We studied submicrometer (L[subscript G] = 0.15-0.25 ¿m) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al[subscript 2]O[subscript 3] passivation. The combination of ...

Guo, Shiping

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81

Electron and hole gas in modulation-doped GaAs/Al{sub 1-x}Ga{sub x}As radial heterojunctions  

Science Conference Proceedings (OSTI)

We perform self-consistent Schroedinger-Poisson calculations with exchange and correlation corrections to determine the electron and hole gas in a radial heterojunction formed in a GaAs/AlGaAs core-multi-shell nanowire, which is either n- or p-doped. We show that the electron and hole gases can be tuned to different localizations and symmetries inside the core as a function of the doping density/gate potential. Contrary to planar heterojunctions, conduction electrons do not form a uniform 2D electron gas (2DEG) localized at the GaAs/AlGaAs interface, but rather show a transition between an isotropic, cylindrical distribution deep in the GaAs core (low doping) and a set of six tunnel-coupled quasi-1D channels at the edges of the interface (high doping). Holes, on the other hand, are much more localized at the GaAs/AlGaAs interface. At low doping, they present an additional localization pattern with six separated 2DEGs strips. The field generated by a back-gate may easily deform the electron or hole gas, breaking the sixfold symmetry. Single 2DEGs at one interface or multiple quasi-1D channels are shown to form as a function of voltage intensity, polarity, and carrier type.

Bertoni, Andrea; Royo, Miquel; Mahawish, Farah; Goldoni, Guido [CNR-NANO S3, Istituto Nanoscienze, Via Campi 213/a, 41125 Modena (Italy); Department of Physics, University of Modena and Reggio Emilia and CNR-NANO S3, Istituto Nanoscienze, Via Campi 213/a, 41125 Modena (Italy)

2011-11-15T23:59:59.000Z

82

Mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers  

SciTech Connect

We report on the demonstration of mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers operating at 10 {mu}m. The laser structures are grown on n-InAs (100) substrate by solid-source molecular-beam epitaxy. An InAs/AlGaSb chirped superlattice structure providing a large oscillator strength and fast carrier depopulation is employed as the active part. The observed minimum threshold current density at 80 K is 0.7 kA/cm{sup 2}, and the maximum operation temperature in pulse mode is 270 K. The waveguide loss of an InAs plasmon waveguide is estimated, and the factors that determine the operation temperature are discussed.

Ohtani, K.; Fujita, K.; Ohno, H. [Laboratory for Nanoelectronics and Semiconductor Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai (Japan)

2005-11-21T23:59:59.000Z

83

Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices  

Science Conference Proceedings (OSTI)

A set of AlGaN/GaN high electron mobility transistor devices has been investigated using step-stress testing, and representative samples of undegraded, source-side-degraded, and drain-side-degraded devices were examined using electron microscopy and microanalysis. An unstressed reference sample was also examined. All tested devices and their corresponding transmission electron microscopy samples originated from the same wafer and thus received nominally identical processing. Step-stressing was performed on each device and the corresponding current voltage characteristics were generated. Degradation in electrical performance, specifically greatly increased gate leakage current, was shown to be correlated with the presence of crystal defects near the gate edges. However, the drain-side-degraded device showed a surface pit on the source side, and another region of the same device showed no evidence of damage. Moreover, significant metal diffusion into the barrier layer from the gate contacts was also observed, as well as thin amorphous oxide layers below the gate metal contacts, even in the unstressed sample. Overall, these observations emphasize that gate-edge defects provide only a partial explanation for device failure.

Johnson, Michael [Arizona State University; Cullen, David A [ORNL; Liu, Lu [University of Florida; Kang, Tsung Sheng [University of Florida, Gainesville; Ren, F. [University of Florida; Chang, C. Y. [University of Florida; Pearton, S. J. [University of Florida; Jang, Soohwan [University of Florida, Gainesville; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Smith, David J [Arizona State University

2012-01-01T23:59:59.000Z

84

Power Conversion Efficiency of AlGaAs/GaAs Schottky Diode for Low-Power On-Chip Rectenna Device Application  

Science Conference Proceedings (OSTI)

A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height from theoretical value are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are well rectified by the fabricated Schottky diodes and stable DC output voltage is obtained. Power conversion efficiency up to 50% is obtained at 1 GHz with series connection between diode and load. The fabricated the n-AlGaAs/GaAs Schottky diode provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai (Malaysia); Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 Skudai Johor Malaysia (Malaysia); Osman, Mohd Nizam [Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya (Malaysia)

2011-05-25T23:59:59.000Z

85

Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films  

DOE Patents (OSTI)

A denticulated Group III nitride structure that is useful for growing Al.sub.xGa.sub.1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.

Allerman, Andrew A.; Crawford, Mary H.; Lee, Stephen R.

2013-01-08T23:59:59.000Z

86

Final report on LDRD project : outstanding challenges for AlGaInN MOCVD.  

Science Conference Proceedings (OSTI)

The AlGaInN material system is used for virtually all advanced solid state lighting and short wavelength optoelectronic devices. Although metal-organic chemical vapor deposition (MOCVD) has proven to be the workhorse deposition technique, several outstanding scientific and technical challenges remain, which hinder progress and keep RD&A costs high. The three most significant MOCVD challenges are: (1) Accurate temperature measurement; (2) Reliable and reproducible p-doping (Mg); and (3) Low dislocation density GaN material. To address challenge (1) we designed and tested (on reactor mockup) a multiwafer, dual wavelength, emissivity-correcting pyrometer (ECP) for AlGaInN MOCVD. This system simultaneously measures the reflectance (at 405 and 550 nm) and emissivity-corrected temperature for each individual wafer, with the platen signal entirely rejected. To address challenge (2) we measured the MgCp{sub 2} + NH{sub 3} adduct condensation phase diagram from 65-115 C, at typical MOCVD concentrations. Results indicate that it requires temperatures of 80-100 C in order to prevent MgCp{sub 2} + NH{sub 3} adduct condensation. Modification and testing of our research reactor will not be complete until FY2005. A new commercial Veeco reactor was installed in early FY2004, and after qualification growth experiments were conducted to improve the GaN quality using a delayed recovery technique, which addresses challenge (3). Using a delayed recovery technique, the dislocation densities determined from x-ray diffraction were reduced from 2 x 10{sup 9} cm{sup -2} to 4 x 10{sup 8} cm{sup -2}. We have also developed a model to simulate reflectance waveforms for GaN growth on sapphire.

Mitchell, Christine Charlotte; Follstaedt, David Martin; Russell, Michael J.; Cross, Karen Charlene; Wang, George T.; Creighton, James Randall; Allerman, Andrew Alan; Koleske, Daniel David; Lee, Stephen Roger; Coltrin, Michael Elliott

2005-03-01T23:59:59.000Z

87

Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots  

Science Conference Proceedings (OSTI)

We report on the structural and optical properties of AlGaN/AlN quantum dot (QD) superlattices synthesized by plasma-assisted molecular-beam epitaxy. Modifying the composition and geometry of the QDs, the peak emission wavelength can be shifted from 320 nm to 235 nm while keeping the internal quantum efficiency larger than 30%. The efficient carrier confinement is confirmed by the stability of the photoluminescence (PL) intensity and decay time, from low temperature up to 100 K. Above this threshold, the PL intensity decreases and the radiative lifetime increases due to carrier thermalization. We also identified the intraband electronic transition between the ground level of the conduction band and the first excited state confined along the growth axis (s-p{sub z}).

Himwas, C.; Songmuang, R.; Le Si Dang [CEA-CNRS Group 'Nanophysique et Semiconducteurs,' Institut Neel-CNRS, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France); Bleuse, J.; Monroy, E. [CEA-CNRS Group 'Nanophysique et Semiconducteurs,' INAC-SP2M, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Rapenne, L.; Sarigiannidou, E. [INP-Grenoble/Minatec, 3 parvis Louis Neel BP257, 38016 Grenoble (France)

2012-12-10T23:59:59.000Z

88

Time-resolved resonance and linewidth of an ultrafast switched GaAs/AlAs microcavity  

E-Print Network (OSTI)

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change in width leads to a change in reflectivity modulation depth. The model predicts an optimal cavity Q for any...

Harding, Philip J; Hartsuiker, Alex; Nowicki-Bringuier, Yoanna-Reine; Gerard, Jean-Michel; Vos, Willem L

2009-01-01T23:59:59.000Z

89

Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics  

Science Conference Proceedings (OSTI)

Al"2O"3, HfO"2, and composite HfO"2/Al"2O"3 films were deposited on n-type GaN using atomic layer deposition (ALD). The interfacial layer of GaON and HfON was observed between HfO"2 and GaN, whereas the absence of an interfacial layer at Al"2O"3/GaN ... Keywords: Al2O3, Atomic-layer-deposition (ALD), GaN, HfO2, High k dielectric, MOS

Y. C. Chang; M. L. Huang; Y. H. Chang; Y. J. Lee; H. C. Chiu; J. Kwo; M. Hong

2011-07-01T23:59:59.000Z

90

Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density  

Science Conference Proceedings (OSTI)

Molecular-beam epitaxy is used for growing structures differing in doping technique and doping level and having a high two-dimensional-electron concentration n{sub s} in the quantum well. The effect of doping combining uniform and {delta} doping on the electron-transport properties of heterostructures is investigated. A new type of structure with a two-sided silicon {delta} doping of GaAs transition layers located on the quantum-well boundaries is proposed. The largest value of electron mobility {mu}{sub H} = 1520 cm{sup 2}/(V s) is obtained simultaneously with a high electron density n{sub s} = 1.37 Multiplication-Sign 10{sup 13} cm{sup -2} at 300 K with such a doping. It is associated with decreasing electron scattering by an ionized impurity, which is confirmed by the carried out calculations.

Khabibullin, R. A., E-mail: khabibullin_r@mail.ru; Vasil'evskii, I. S. [MEPHI National Research Nuclear University (Russian Federation); Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Ponomarev, D. S. [MEPHI National Research Nuclear University (Russian Federation); Lunin, R. A.; Kulbachinskii, V. A. [Moscow State University (Russian Federation)

2011-10-15T23:59:59.000Z

91

Polarization-balanced design of AlN/GaN heterostructures: Application to double-barrier structures  

E-Print Network (OSTI)

Inversion- and depletion- regions generally form at the interfaces between doped leads (cladding layers) and the active region in wurtzite c-plane AlN/GaN heterostructures. The band bending in the depletion region can seriously impede perpendicular electronic transport. To counter the formation of these regions, we consider polarization-balanced designs of AlN/GaN heterostructures based on matching the applied bias to the internal voltage drop arising from spontaneous and piezeolectric fields. To retain freedom of design we use alloyed Al$_{\\tilde{x}}$Ga$_{1-\\tilde{x}}$N leads. Use of pure GaN leads requires huge voltage drops which severely restricts design. The alloy concentration $\\tilde{x}$ tunes the internal voltage drop over the structure. For short active regions comprised of AlN and GaN layers, we derive a simple relation between the applied bias, average alloy composition of the active region, and the alloy concentration of the leads. We study polarization-balanced designs for AlN barriers structures...

Berland, Kristian; Hyldgaard, Per

2011-01-01T23:59:59.000Z

92

B4, Admittance Spectroscopy of GaSb(100) and ALD / PEALD Al 2 O ...  

Science Conference Proceedings (OSTI)

PEALD was employed to reduce the thermal budget of dielectric deposition, ..... Bands and Hopping-Induced Mixed Valence for Ti and Sc in GdSc1-x TixO3 for x ...

93

Theoretical And Experimental Studies Of The Effects Of Rapid Thermal Annealing In GaAs/AlGaAs Quantum Dots Grown By Droplet Epitaxy  

Science Conference Proceedings (OSTI)

We fabricated low-density GaAs/AlGaAs quantum dots for single photon source by droplet epitaxy. We investigated the emission energies of the dots and underlying superlattice by using photoluminescence and cathodoluminescence measurements. By forming a mesa etched structure, we distinguished the transitions from the superlattice and the dots. And we calculated the diffusion length in this system from the peak shift of the superlattice, and applied the diffusion to the dots to investigate the emission energy shift of the QDs.z

Moon, P. [Nano Convergence Devices Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa (Japan); Ha, S.-K.; Song, J. D.; Lim, J. Y.; Choi, W. J.; Han, I. K.; Lee, J. I. [Nano Convergence Devices Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Bounouar, S.; Donatini, F.; Dang, L. S.; Poizat, J. P. [CEA/CNRS/UJF team 'Nanophysics and semiconductors', Institute Neel/CNRS-UJF, Grenoble (France); Kim, J. S. [Department of Physics, Yeungnam University, Gyeonsan (Korea, Republic of)

2011-12-23T23:59:59.000Z

94

Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates  

SciTech Connect

We show that the epitaxial growth of thin layers of AlGaAs on Ge and Si substrates allows to obtain single photon sources by exploiting the sparse and unintentional contamination with acceptors of the AlGaAs. Very bright and sharp single photoluminescence lines are observed in confocal microscopy. These lines behave very much as single excitons in quantum dots, but their implementation is by far much easier, since it does not require 3D nucleation. The photon antibunching is demonstrated by time resolved Hanbury Brown and Twiss measurements.

Minari, S.; Cavigli, L.; Sarti, F.; Abbarchi, M.; Accanto, N.; Munoz Matutano, G.; Vinattieri, A.; Gurioli, M. [Dipartimento di Fisica e Astronomia, LENS and CNISM, Universita di Firenze, Via Sansone 1, I-50019 Firenze (Italy); Bietti, S.; Sanguinetti, S. [Dipartimento di Scienza dei Materiali and L-NESS, Universita di Milano Bicocca, Via Cozzi 53, I-20125 Milano (Italy)

2012-10-22T23:59:59.000Z

95

II3, 2?m Thick Device Quality GaN on Si(111) Using AlGaN Graded ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

96

Effect of antimony nano-scale surface-structures on a GaSb/AlAsSb distributed Bragg reflector  

SciTech Connect

Effects of antimony crystallization on the surface of GaSb during low temperature molecular beam epitaxy growth are investigated. The geometry of these structures is studied via transmission electron and atomic force microscopies, which show the surface metal forms triangular-shaped, elongated nano-wires with a structured orientation composed entirely of crystalline antimony. By depositing antimony on a GaSb/AlAsSb distributed Bragg reflector, the field is localized within the antimony layer. Polarization dependent transmission measurements are carried out on these nano-structures deposited on a GaSb/AlAsSb distributed Bragg reflector. It is shown that the antimony-based structures at the surface favor transmission of light polarized perpendicular to the wires.

Husaini, S.; Shima, D.; Ahirwar, P.; Rotter, T. J.; Hains, C. P.; Dang, T.; Bedford, R. G.; Balakrishnan, G. [Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Dayton, OH 45433 (United States)] [Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Dayton, OH 45433 (United States)

2013-02-11T23:59:59.000Z

97

Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations  

Science Conference Proceedings (OSTI)

Deep-UV optical gain has been demonstrated in Al{sub 0.7}Ga{sub 0.3}N/AlN multiple quantum wells under femtosecond optical pumping. Samples were grown by molecular beam epitaxy under a growth mode that introduces band structure potential fluctuations and high-density nanocluster-like features within the AlGaN wells. A maximum net modal gain value of 118 {+-} 9 cm{sup -1} has been measured and the transparency threshold of 5 {+-} 1 {mu}J/cm{sup 2} was experimentally determined, corresponding to 1.4 x 10{sup 17} cm{sup -3} excited carriers. These findings pave the way for the demonstration of solid-state lasers with sub-250 nm emission at room temperature.

Francesco Pecora, Emanuele; Zhang Wei; Nikiforov, A.Yu.; Yin Jian; Paiella, Roberto; Dal Negro, Luca; Moustakas, T. D. [Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary's Street, Boston, Massachusetts 02215 (United States); Zhou Lin; Smith, David J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2012-02-06T23:59:59.000Z

98

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY...

99

Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy  

SciTech Connect

Low-temperature AlN buffer layers grown via plasma-assisted molecular beam epitaxy on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions, with their size, shape, and tilt determined by the AlN V/III flux ratio. GaN nanowires were frequently observed to adopt the structural characteristics of the underlying AlN columns, including the size and the degree of tilt. Piezoresponse force microscopy and polarity-sensitive etching indicate that the AlN films and the protruding columns have a mixed crystallographic polarity. Convergent beam electron diffraction indicates that GaN nanowires are Ga-polar, suggesting that Al-polar columns are nanowire nucleation sites for Ga-polar nanowires. GaN nanowires of low density could be grown on AlN buffers that were predominantly N-polar with isolated Al-polar columns, indicating a high growth rate for Ga-polar nanowires and suppressed growth of N-polar nanowires under typical growth conditions. AlN buffer layers grown under slightly N-rich conditions (V/III flux ratio = 1.0 to 1.3) were found to provide a favorable growth surface for low-density, coalescence-free nanowires.

Brubaker, Matt D. [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); DARPA Center for Integrated Micro/Nano-Electromechanical Transducers (iMINT), University of Colorado, Boulder, Colorado 80309 (United States); Levin, Igor; Davydov, Albert V. [Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Rourke, Devin M.; Sanford, Norman A.; Bertness, Kris A. [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Bright, Victor M. [Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); DARPA Center for Integrated Micro/Nano-Electromechanical Transducers (iMINT), University of Colorado, Boulder, Colorado 80309 (United States)

2011-09-01T23:59:59.000Z

100

Activation energy of degradation in GaAlAs double heterostructure laser diodes  

SciTech Connect

Aging test of GaAlAs double heterostructure (DH) laser diodes is performed in the temperature range of 50--180 /sup 0/C. In samples for the aging test, AuSn-alloy bonding solder is used and the facet coating with Al/sub 2/O/sub 3/ film is performed. Samples are operated in the light emitting diode (LED) mode with the application of the constant current of 4 kA/cm/sup 2/ and 6 kA/cm/sup 2/ at temperatures above 80 /sup 0/C and in the automatic power control (APC) lasing mode with the constant optical power of 5 mW/facet at 50 and 70 /sup 0/C. The activation energy is 0.5 eV obtained from the results of the LED mode operation at 4 kA/cm/sup 2/. The parameter to evaluate the degradation is the current at which the optical power at 25 /sup 0/C is 5 mW/facet. This parameter includes the deterioration of the external differencial efficiency. It is shown that the increasing rates of this parameter are almost the same at the same temperature between the LED mode operation at 4 kA/cm/sup 2/ and 6 kA/cm/sup 2/. The increasing rate is almost the same when samples are operated in the APC lasing mode. Twenty-three samples operated at 70 /sup 0/C maintain the optical power of 5 mW/facet set initially over 5000 h. The averaged increasing rate of that parameter in these samples is 7.1 x 10/sup -6//h. The activation energy of 0.5 eV is almost the same as that of GaAlAs DH LED's which is 0.56 eV. It is presumed that point defects which disperse homogeneously cause the degradation of laser diodes and this degradation mode seemed to be the same as LED owing to the improvements against the facet degradation and the contact degradation.

Imai, H.; Hori, K.; Takusagawa, M.; Wakita, K.

1981-05-01T23:59:59.000Z

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101

SC Jobs  

Office of Science (SC) Website

A2-65DD19B3FEE1https:www.usajobs.govGetJobViewDetails348127300 Budget Analyst 13-MP-SC-HQ-023 Job Title: Budget Analyst 13-MP-SC-HQ-023
Office: Budget

102

SF{sub 6}/O{sub 2} plasma effects on silicon nitride passivation of AlGaN/GaN high electron mobility transistors  

SciTech Connect

The effects of various plasma and wet chemical surface pretreatments on the electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) passivated with plasma-deposited silicon nitride were investigated. The results of pulsed IV measurements show that samples exposed to various SF{sub 6}/O{sub 2} plasma treatments have markedly better rf dispersion characteristics compared to samples that were either untreated or treated in wet buffered oxide etch prior to encapsulation. The improvement in these characteristics correlates with the reduction of carbon on the semiconductor surface as measured with x-ray photoelectron spectroscopy. HEMT channel sheet resistance was also affected by varying silicon nitride deposition parameters.

Meyer, David J.; Flemish, Joseph R.; Redwing, Joan M. [Materials Science and Engineering Department, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2006-11-27T23:59:59.000Z

103

Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location  

Science Conference Proceedings (OSTI)

We report a systematic study of the near-infrared intersubband absorption in AlGaN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without {delta}-doping. The transition energies are in agreement with theoretical calculations including many-body effects. A dramatic reduction of the intersubband absorption linewidth is observed when the {delta}-doping is placed at the end of the quantum well. This reduction is attributed to the improvement of interface roughness. The linewidth dependence on interface roughness is well reproduced by a model that considers the distribution of well widths measured with transmission electron microscopy.

Edmunds, C.; Cervantes, M.; Malis, O. [Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); Tang, L.; Shao, J.; Li, D. [Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, West Lafayette, Indiana 47907 (United States); Gardner, G. [Birck Nanotechnology Center, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, D. N. [Birck Nanotechnology Center, West Lafayette, Indiana 47907 (United States); Manfra, M. J. [Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2012-09-03T23:59:59.000Z

104

Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization  

Science Conference Proceedings (OSTI)

The critical voltage for degradation of AlGaN/GaN high electron mobility transistors (HEMTs) employed with the Pt/Ti/Au gate metallization instead of the commonly used Ni/Au was significantly increased during the off-state stress. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -60V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of around -60V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Kang, Tsung Sheng [University of Florida, Gainesville; Davies, Ryan [University of Florida; Gila, Brent P. [University of Florida, Gainesville; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Ren, F. [University of Florida

2011-01-01T23:59:59.000Z

105

Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices  

Science Conference Proceedings (OSTI)

We present the real-time x-ray irradiation response of charge and pH sensitive solution gate AlGaN/GaN high electron mobility transistors. The devices show stable and reproducible behavior under and following x-ray radiation, including a linear integrated response with dose into the muGy range. Titration measurements of devices in solution reveal that the linear pH response and sensitivity are not only retained under x-ray irradiation, but an irradiation response could also be measured. Since the devices are biocompatible, and can be simultaneously operated in aggressive fluids and under hard radiation, they are well-suited for both medical radiation dosimetry and biosensing applications.

Hofstetter, Markus; Funk, Maren; Paretzke, Herwig G.; Thalhammer, Stefan [Helmholtz Zentrum Muenchen, Ingolstaedter Landstrasse 1, 85764 Neuherberg (Germany); Howgate, John; Sharp, Ian D.; Stutzmann, Martin [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching (Germany)

2010-03-01T23:59:59.000Z

106

High photo-excited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode  

E-Print Network (OSTI)

We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77K. The detection structure is based on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QD-RTD). A photon rate of 115 photons per second had induced 10nA photocurrent in this structure, corresponding to the photo-excited carrier multiplication factor of 10^7. This high multiplication factor is achieved by the quantum dot induced memory effect and the resonant tunneling tuning effect of QD-RTD structure.

Wang, Wangping; Xiong, Dayuan; Li, Ning; Lu, Wei

2007-01-01T23:59:59.000Z

107

High photo-excited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode  

E-Print Network (OSTI)

We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77K. The detection structure is based on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QD-RTD). A photon rate of 115 photons per second had induced 10nA photocurrent in this structure, corresponding to the photo-excited carrier multiplication factor of 10^7. This high multiplication factor is achieved by the quantum dot induced memory effect and the resonant tunneling tuning effect of QD-RTD structure.

Wangping Wang; Ying Hou; Dayuan Xiong; Ning Li; Wei Lu

2007-10-15T23:59:59.000Z

108

DOE/SC-ARM-12-023 ARM Climate Research Facility AnnuAl RepoRt - 2012  

NLE Websites -- All DOE Office Websites (Extended Search)

2-023 2-023 ARM Climate Research Facility AnnuAl RepoRt - 2012 New Climate Measurement Sites h ?QOPQK?* ? * - " ?q " *"- ?l *?G qlH?b " * ?q ?e " "* ? ? - " ?*"-? "?- *"- ? "* Y? ? "? ql?l- " ?e " "* ? - ? ? * ? - *? *?n " *- K? K? ? ? "? ? "* ?- ?f "- ?h ? " ?* ? - M?? ? "? "* ? ? ?*-? ?- *"- ? ?* ? ?- ?QOPRK? ?* ?"" ? -" ? ql ? " *" ? "* ?- ? *? " * ?- *"- ? " "*" ? - ?* ?"- M??o - - ?" * * *"- ? - ?* ?*"-? "* ?" Y

109

Drift velocity of electrons in quantum wells of selectively doped In{sub 0.5}Ga{sub 0.5}As/Al{sub x}In{sub 1-x}As and In{sub 0.2}Ga{sub 0.8}As/Al{sub x}Ga{sub 1-x}As heterostructures in high electric fields  

Science Conference Proceedings (OSTI)

The field dependence of drift velocity of electrons in quantum wells of selectively doped In{sub 0.5}Ga{sub 0.5}As/Al{sub x}In{sub 1-x}As and In{sub 0.2}Ga{sub 0.8}As/Al{sub x}Ga{sub 1-x}As heterostructures is calculated by the Monte Carlo method. The influence of varying the molar fraction of Al in the composition of the Al{sub x}Ga{sub 1-x}As and Al{sub x}In{sub 1-x}As barriers of the quantum well on the mobility and drift velocity of electrons in high electric fields is studied. It is shown that the electron mobility rises as the fraction x of Al in the barrier composition is decreased. The maximum mobility in the In{sub 0.5}Ga{sub 0.5}As/In{sub 0.8}Al{sub 0.2}As quantum wells exceeds the mobility in a bulk material by a factor of 3. An increase in fraction x of Al in the barrier leads to an increase in the threshold field E{sub th} of intervalley transfer (the Gunn effect). The threshold field is E{sub th} = 16 kV/cm in the In{sub 0.5}Ga{sub 0.5}As/Al{sub 0.5}In{sub 0.5}As heterostructures and E{sub th} = 10 kV/cm in the In{sub 0.2}Ga{sub 0.8}As/Al{sub 0.3}Ga{sub 0.7}As heterostructures. In the heterostructures with the lowest electron mobility, E{sub th} = 2-3 kV/cm, which is lower than E{sub th} = 4 kV/cm in bulk InGaAs.

Pozela, J., E-mail: pozela@pfi.lt; Pozela, K.; Raguotis, R.; Juciene, V. [Center for Physical Sciences and Technology, Semiconductor Physics Institute (Lithuania)

2011-06-15T23:59:59.000Z

110

Cl{sub 2}-based dry etching of the AlGaInN system in inductively coupled plasmas  

DOE Green Energy (OSTI)

Cl{sub 2}-based Inductively Coupled Plasmas with low additional dc self- biases(-100V) produce convenient etch rates(500-1500 A /min) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas(Ar, N{sub 2}, H{sub 2}), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl{sub 2} in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Cho, Hyun; Vartuli, C.B.; Abernathy, C.R.; Donovan, S.M.; Pearton, S.J. [Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering; Shul, R.J.; Han, J. [Sandia National Labs., NM (United States)

1997-12-01T23:59:59.000Z

111

Growth and properties of InGaAs/FeAl/InAlAs/InP heterostructures for buried reflector/interconnect applications in InGaAs thermophotovoltaic devices  

DOE Green Energy (OSTI)

Thermophotovoltaic cells consisting of InGaAs active layers are of extreme promise for high efficiency, low bandgap TPV conversion. In the monolithic interconnected module configuration, the presence of the InGaAs lateral conduction layer (LCL) necessary for the series connection between TPV cells results in undesirable free carrier absorption, causing a tradeoff between series resistance and optical absorption losses in the infrared. A potential alternative is to replace the LCL with an epitaxial metal layer that would provide a low-resistance interconnect while not suffering from free carrier absorption. The internal metal layer would also serve as an efficient, panchromatic back surface reflector, providing the additional advantage of increased effective optical thickness of the InGaAs cell. In this paper, the authors present the first results on the growth and development of buried epitaxial metal layers for TPV applications. High quality, single crystal, epitaxial Fe{sub x}Al{sub 1{minus}x} layers were grown on InAlAs/InP substrates, having compositions in the range x = 0.40--0.80. Epitaxial metal layers up to 1,000 {angstrom} in thickness were achieved, with excellent uniformity over large areas and atomically smooth surfaces. X-ray diffraction studies indicate that all FeAl layers are strained with respect to the substrate, for the entire composition range studied and for all thicknesses. The FeAl layers exhibit excellent resistance characteristics, with resistivities from 60 {micro}ohm-cm to 100 {micro}ohm-cm, indicating that interface scattering has a negligible effect on lateral conductivity. Reflectance measurements show that the FeAl thickness must be at least 1,000 {angstrom} to achieve > 90% reflection in the infrared.

Ringel, S.A.; Sacks, R.N.; Qin, L. [Ohio State Univ., Columbus, OH (United States). Dept. of Electrical Engineering; Clevenger, M.B.; Murray, C.S. [Bettis Atomic Power Lab., West Mifflin, PA (United States)

1998-11-01T23:59:59.000Z

112

Strain control of AlGaN/GaN high electron mobility transistor structures on silicon (111) by plasma assisted molecular beam epitaxy  

Science Conference Proceedings (OSTI)

This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN-based high electron mobility transistor structures grown on 4 in. Si (111) substrates. In situ measurements of wafer curvature during growth proved to be a very powerful method to analyze the buffer layer's thickness dependent strain. The Ga/N ratio at the beginning of growth of the GaN buffer layer is the critical parameter to control the compressive strain of the entire grown structure. An engineered amount of compressive strain must be designed into the structure to perfectly compensate for the tensile strain caused by differences in the thermal expansion coefficient between the epi-layer and substrate during sample cool down from growth temperatures. A maximum film thickness of 4.2 {mu}m was achieved without the formation of any cracks and a negligible bow of the wafers below 10 {mu}m. Measurement of the as-grown wafers revealed depth profiles of the charge carrier concentration comparable to values achieved on SiC substrates and mobility values of the two dimensional electron gas in the range 1230 to 1350 cm{sup 2}/Vs at a charge carrier concentration of 6.5-7 10{sup 12}/cm{sup 2}. First results on processed wafers with 2 {mu}m thick buffer layer indicate very promising results with a resistance of the buffer, measured on 200 {mu}m long contacts with 15 {mu}m pitch, in the range of R > 10{sup 9}{Omega} at 100 V and breakdown voltages up to 550 V.

Aidam, Rolf; Diwo, Elke; Rollbuehler, Nicola; Kirste, Lutz; Benkhelifa, Fouad [Fraunhofer-Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany)

2012-06-01T23:59:59.000Z

113

Evolution of AlN buffer layers on Silicon and the effect on the property of the expitaxial GaN film  

E-Print Network (OSTI)

The morphology evolution of high-temperature grown AlN nucleation layers on (111) silicon has been studied using atomic force microscopy (AFM). The structure and morphology of subsequently grown GaN film were characterized ...

Zang, Keyan

114

Spin injection into semiconductors : the role of Fe/Al[sub x]Ga[sub 1-x]As interface  

SciTech Connect

The influence of the growth and post-growth annealing temperatures of Fe/Al{sub x}Ga{sub 1-x}As-based spin light-emitting diodes (LEDs) on the spin injection efficiency is discussed. The extent of interfacial reactions during molecular beam epitaxial growth of Fe on GaAs was determined from in-situ x-ray photoelectron spectroscopy studies. The Fe/GaAs interface results in {<=} 3 monolayers of reaction for Fe grown at -15 C. Intermediate growth temperatures (95 C) lead to {approx}5 monolayers of interfacial reactions, and high growth temperatures of 175 C lead to a {approx}9 monolayer thick reacted layer. Polarized neutron reflectivity was used to determine the interfacial magnetic properties of epitaxial Fe{sub 0.5}Co{sub 0.5}/GaAs heterostructures grown under identical conditions. No interfacial magnetic dead layer is detected at the interface for Fe{sub 0.5}Co{sub 0.5} films grown at -15 C, an {approx}6 {angstrom} thick nonmagnetic layer formed at the interface for 95 C growth and an {approx}5 {angstrom} thick magnetic interfacial reacted layer formed for growth at 175 C. Spin injection from Fe contacts into spin LEDs decreases sharply when reactions result in a nonmagnetic interfacial layer. Significant spin injection signals are obtained from Fe contacts grown between -5 C and 175 C, although the higher Fe growth temperatures resulted in a change in the sign of the spin polarization. Post-growth annealing of the spin LEDs is found to increase spin injection efficiency for low Fe growth temperatures and to a sign reversal of the spin polarization for high growth temperature (175 C). An effective Schottky barrier height increase indicates that post growth annealing modifies the Fe/Al{sub x}Ga{sub 1-x}As interface.

Fitzsimmons, M. R. (Michael R.); Park, S. (Sungkyun)

2004-01-01T23:59:59.000Z

115

DOE/SC-ARM-10-032 ARM Climate Research Facility AnnuAl RepoRt - 2010  

NLE Websites -- All DOE Office Websites (Extended Search)

10-032 10-032 ARM Climate Research Facility AnnuAl RepoRt - 2010 Recovery Act HigHligHts September 2009 * One hundred percent of allocated funding from the American Recovery and Reinvestment Act of 2009 released to the Atmospheric Radiation Measurement (ARM) Climate Research Facility. October 2009 * Preliminary design reviews successfully completed for new solar spectrometer and Data Management Facility (DMF) upgrades. December 2009 * Preliminary design reviews successfully completed for 18 new radars and upgrades to existing radars. January 2010 * Design reviews completed for DMF, radars, and shipborne radar wind profiler. * Installation and integration of new equipment in process for the ARM Data Archive and aircraft infrastructure, data systems, and

116

II2, GaN/AlN Heterostructures on Vertical {111} Fin Facets of Si (110)  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

117

Comparison of dc performance of Pt/Ti/Au- and Ni/Au-Gated AlGaN/GaN High Electron Mobility Transistors  

Science Conference Proceedings (OSTI)

We have demonstrated significant improvements of AlGaN/GaN High Electron Mobility Transistors (HEMTs) dc performance by employing Pt/Ti/Au instead of the conventional Ni/Au gate metallization. During off-state bias stressing, the typical critical voltage for HEMTs with Ni/Au gate metallization was ~ -45 to -65V. By sharp contrast, no critical voltage was observed for HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. After the off-state stressing, the drain current of Ni/Au gated-HEMTs decreased by~ 15%. For the Pt-gate HEMTs, no degradation of the drain current occurred and there were minimal changes in the Schottky gate characteristics for both forward and reverse bias conditions. The HEMTs with Pt/Ti/Au metallization showed an excellent drain on/off current ratio of 1.5 108. The on/off drain current ratio of Ni-gated HEMTs was dependent on the drain bias voltage and ranged from 1.2 107 at Vds=5V and 6 105

Liu, L. [University of Florida, Gainesville; Lo, C. F. [University of Florida; Kang, Tsung Sheng [University of Florida, Gainesville; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL; Laboutin, O. [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Ren, F. [University of Florida

2011-01-01T23:59:59.000Z

118

Investigation of mechanisms of multimode emission from double-heterostructure AlGaAs injection lasers with narrow stripe contacts  

SciTech Connect

An investigation was made of the spectral characteristics of planar stripe (contact width 6--8 ..mu..) lasers made of AlGaAs heterostructures. The steady-state emission spectrum could be of multimode type because of the high level of spontaneous emission in the lasing mode. The spectrum then became narrower on increase in the power and in the limit changed to the single-mode form. However, in the presence of self-modulation processes the multimode nature of the emission spectrum could be explained by a theory of transient effects and in this case the width of the spectrum increased on increase in the power.

Bessonov, Y.L.; Kurlenkov, S.S.; Morozov, V.N.; Sapozhnikov, S.M.; Thai, C.t.; Shidlovskii, V.R.

1985-02-01T23:59:59.000Z

119

C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric  

Science Conference Proceedings (OSTI)

Epitaxial germanium metal-oxide-semiconductor capacitors (MOSCAP) were fabricated on GaAs substrate using atomic layer deposited Al"2O"3 gate dielectric with surface treatments including pure HF and HF plus rapid thermal oxidation (RTO). The electrical ... Keywords: ALD Al2O3, CMOS integration, Ge MOSCAP, Ge epitaxial film, RTO

Shih Hsuan Tang; Chien I. Kuo; Hai Dang Trinh; Mantu Hudait; Edward Yi Chang; Ching Yi Hsu; Yung Hsuan Su; Guang-Li Luo; Hong Quan Nguyen

2012-09-01T23:59:59.000Z

120

Lattice constant grading in the Al.sub.y Ga.sub.1-y As.sub.1-x Sb.sub.x alloy system  

DOE Patents (OSTI)

Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5 .mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photolvoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of growing layer.

Moon, Ronald L. (Palo Alto, CA)

1980-01-01T23:59:59.000Z

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121

Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 21011 to 21015 cm2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 21015 cm2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 21011 to 21015 cm2 exhibited minimal degradation of the saturation drain current and extrinsic trans- conductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present. VC 2011 American Vacuum Society. [DOI: 10.1116/1.3644480

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Ren, F. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2011-01-01T23:59:59.000Z

122

Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source  

Science Conference Proceedings (OSTI)

InAlN lattice-matched to GaN was grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source. The alloy composition, growth conditions, and strain coherence of the InAlN were verified by high resolution x-ray diffraction {omega}-2{theta} scans and reciprocal space maps. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy of the InAlN revealed the absence of lateral composition modulation that was observed in the films grown by plasma-assisted MBE. InAlN/AlN/GaN high electron mobility transistors with smooth surfaces were fabricated with electron mobilities exceeding 1600 cm{sup 2}/Vs and sheet resistances below 244 {Omega}/sq.

Wong, Man Hoi; Wu Feng; Hurni, Christophe A.; Choi, Soojeong; Speck, James S.; Mishra, Umesh K. [Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106 (United States)

2012-02-13T23:59:59.000Z

123

Other Participants 2005 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

High School , Marietta , GA Hoffman Estates High School , Hoffman Estates , IL Idaho Falls High School , Idaho Falls, ID Irmo High School , Columbia , SC Jamestown High...

124

SOLID SOLUTION EFFECTS ON THE THERMAL PROPERTIES IN THE MgAl2O4-MgGa2O4  

Science Conference Proceedings (OSTI)

Solid solution eects on thermal conductivity within the MgO-Al2O3-Ga2O3 system were studied. Samples with systematically varied additions of MgGa2O4 to MgAl2O4 were prepared and the laser ash technique was used to determine thermal diusivity at temperatures between 200C and 1300C. Heat capacity as a function of temperature from room temperature to 800C was also determined using dierential scanning calorimetry. Solid solution in the MgAl2O4-MgGa2O4 system decreases the thermal conductivity up to 1000C. At 200C thermal conductivity decreased 24% with a 5 mol% addition of MgGa2O4 to the system. At 1000C the thermal conductivity decreased 13% with a 5 mol% addition. Steady state calculations showed a 12.5% decrease in heat ux with 5 mol% MgGa2O4 considered across a 12 inch thickness.

O'Hara, Kelley [University of Missouri, Rolla; Smith, Jeffrey D [ORNL; Sander, Todd P. [Missouri University of Science and Technology; Hemrick, James Gordon [ORNL

2013-01-01T23:59:59.000Z

125

Radio-frequency measurements of UNiX compounds (X= Al, Ga, Ge) in high magnetic fields  

SciTech Connect

We performed radio-frequency (RF) skin-depth measurements of antiferromagnetic UNiX compounds (X=Al, Ga, Ge) in magnetic fields up to 60 T and at temperatures between 1.4 to {approx}60 K. Magnetic fields are applied along different crystallographic directions and RF penetration-depth was measured using a tunnel-diode oscillator (TDO) circuit. The sample is coupled to the inductive element of a TDO resonant tank circuit, and the shift in the resonant frequency {Delta}f of the circuit is measured. The UNiX compounds exhibit field-induced magnetic transitions at low temperatures, and those transitions are accompanied by a drastic change in {Delta}f. The results of our skin-depth measurements were compared with previously published B-T phase diagrams for these three compounds.

Mielke, Charles H [Los Alamos National Laboratory; Mcdonald, David R [Los Alamos National Laboratory; Zapf, Vivien [Los Alamos National Laboratory; Altarawneh, Moaz M [Los Alamos National Laboratory; Lacerda, Alex H [Los Alamos National Laboratory; Adak, Sourav [Los Alamos National Laboratory; Karunakar, Kothapalli [Los Alamos National Laboratory; Nakotte, Heinrich [Los Alamos National Laboratory; Chang, S [NIST; Alsmadi, A M [HASHEMITE UNIV; Alyones, S [HASHEMIT UNIV

2009-01-01T23:59:59.000Z

126

The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

We have investigated the effect of proton irradiation on reliability of InAlN/GaN high electron mobility transistors (HEMTs). Devices were subjected to 5-15 MeV proton irradiations with a fixed dose of 5 1015 cm-2, or to a different doses of 2 1011, 5 1013 or 2 1015 cm-2 of protons at a fixed energy of 5 MeV. During off-state electrical stressing, the typical critical voltage for un-irradiated devices was 45 to 55 V. By sharp contrast, no critical voltage was detected for proton irradiated HEMTs up to 100 V, which was instrument-limited. After electrical stressing, no degradation was observed for the drain or gate current-voltage characteristics of the proton-irradiated HEMTs. However, the drain current decreased ~12%, and the reverse bias gate leakage current increased more than two orders of magnitude for un-irradiated HEMTs as a result of electrical stressing.

Liu, L. [University of Florida, Gainesville; Lo, C. F. [University of Florida; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL; Ren, F. [University of Florida

2012-01-01T23:59:59.000Z

127

Capped ED-Mode AlN/GaN Inverters - Programmaster.org  

Science Conference Proceedings (OSTI)

The demonstrated inverter is operating at VDD = 5 V and consists of an enhancement- and depletion-mode HEMT with 1.5 nm thin subcritical AlN...

128

Atomic layer deposition of Al{sub 2}O{sub 3} on GaSb using in situ hydrogen plasma exposure  

SciTech Connect

In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al{sub 2}O{sub 3} interfaces. Prior to atomic layer deposition of an Al{sub 2}O{sub 3} dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical interfaces, as indicated by capacitance-voltage measurements, were obtained using higher plasma powers, longer exposure times, and increasing substrate temperatures up to 250 Degree-Sign C. X-ray photoelectron spectroscopy reveals that the most effective treatments result in decreased SbO{sub x}, decreased Sb, and increased GaO{sub x} content at the interface. This in situ hydrogen plasma surface preparation improves the semiconductor/insulator electrical interface without the use of wet chemical pretreatments and is a promising approach for enhancing the performance of Sb-based devices.

Ruppalt, Laura B.; Cleveland, Erin R.; Champlain, James G.; Prokes, Sharka M.; Brad Boos, J.; Park, Doewon; Bennett, Brian R. [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375 (United States)

2012-12-03T23:59:59.000Z

129

Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications  

Science Conference Proceedings (OSTI)

We report on molecular beam epitaxial growth of AlInSb/GaInSb metamorphic high-electron-mobility-transistor structures for low power, high frequency applications on 4 in. GaAs substrates. The structures consist of a Ga{sub 0.4}In{sub 0.6}Sb channel embedded in Al{sub 0.4}In{sub 0.6}Sb barrier layers which are grown on top of an insulating metamorphic buffer, which is based on the linear exchange of Ga versus In and a subsequent exchange of As versus Sb. Precise control of group V fluxes and substrate temperature in the Al{sub 0.4}In{sub 0.6}As{sub 1-x}Sb{sub x} buffer is essential to achieve high quality device structures. Good morphological properties were achieved demonstrated by the appearance of crosshatching and root mean square roughness values of 2.0 nm. Buffer isolation is found to be >100 k{Omega}/{open_square} for optimized growth conditions. Hall measurements at room temperature reveal electron densities of 2.8x10{sup 12} cm{sup -2} in the channel at mobility values of 21.000 cm{sup 2}/V s for single-sided Te volume doping and 5.4x10{sup 12} cm{sup -2} and 17.000 cm{sup 2}/V s for double-sided Te {delta}-doping, respectively.

Loesch, R.; Aidam, R.; Kirste, L.; Leuther, A. [Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg (Germany)

2011-02-01T23:59:59.000Z

130

Many-body effects in wide parabolic AlGaAs quantum wells A. Tabata, M. R. Martins, and J. B. B. Oliveira  

E-Print Network (OSTI)

Many-body effects in wide parabolic AlGaAs quantum wells A. Tabata, M. R. Martins, and J. B. B gas in n-type wide parabolic quantum wells. A series of samples with different well widths at the Fermi level at low temperature only in the thinnest parabolic quantum wells. The suppression of the many

Gusev, Guennady

131

AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics  

Science Conference Proceedings (OSTI)

This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

Sun, K. X.

2011-05-31T23:59:59.000Z

132

Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs  

Science Conference Proceedings (OSTI)

Interfacial chemical analyses and electrical characterization of in situ atomic layer deposited (ALD) Al"2O"3 on freshly molecular beam epitaxy (MBE) grown n- and p- GaAs (001) with a (4x6) surface reconstruction are performed. The capacitance-voltage ... Keywords: Atomic layer deposition, III-V compound semiconductor, Molecular beam epitaxy

Y. H. Chang; M. L. Huang; P. Chang; C. A. Lin; Y. J. Chu; B. R. Chen; C. L. Hsu; J. Kwo; T. W. Pi; M. Hong

2011-04-01T23:59:59.000Z

133

Correlation between Ga-O signature and midgap states at the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface  

SciTech Connect

Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As gate stacks were fabricated using different concentrations of NH{sub 4}OH as a pre-deposition treatment. Increased NH{sub 4}OH concentrations significantly reduced the C-V weak inversion hump and the measured near midgap interface states density (D{sub it}). X-ray photoelectron spectroscopy (XPS) studies revealed that these changes in the electrical properties were accompanied by a reduction in the amount of the Ga-O bonding while As-As dimers as well as other XPS detected InGaAs surface species did not correlate with the observed D{sub it} trend. Possible explanations for these findings are suggested.

Krylov, Igor [Russell Berrie Nanotechnology Institute, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Gavrilov, Arkady [Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Eizenberg, Moshe [Russell Berrie Nanotechnology Institute, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Ritter, Dan [Russell Berrie Nanotechnology Institute, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)

2012-08-06T23:59:59.000Z

134

Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE  

Science Conference Proceedings (OSTI)

GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia and Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia); Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia)

2012-06-29T23:59:59.000Z

135

Reduction in interface state density of Al{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation  

Science Conference Proceedings (OSTI)

We report the decrease in interface trap density (D{sub it}) in Al{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor (MOS) capacitors by using electron cyclotron resonance plasma nitridation of the InGaAs surfaces. The impact of the nitridation process on the MOS interface properties is quantitatively examined. The plasma nitridation process is observed to form a nitrided layer at the InGaAs surface. The nitridation using microwave power (P{sub microwave}) of 250 W and nitridation time (t{sub nitridation}) of 420 s can form Al{sub 2}O{sub 3}/InGaAs MOS interfaces with a minimum D{sub it} value of 2.0 Multiplication-Sign 10{sup 11} cm{sup -2} eV{sup -1}. On the other hand, the nitridation process parameters such as P{sub microwave} and t{sub nitridation} are found to strongly alter D{sub it} (both decrease and increase are observed) and capacitance equivalent thickness (CET). It is found that the nitridation with higher P{sub microwave} and shorter t{sub nitridation} can reduce D{sub it} with less CET increase. Also, it is observed that as t{sub nitridation} increases, D{sub it} decreases first and increases later. It is revealed from XPS analyses that minimum D{sub it} can be determined by the balance between the saturation of nitridation and the progress of oxidation. As a result, it is found that the superior MOS interface formed by the nitridation is attributable to the existence of oxide-less InGaN/InGaAs interfaces.

Hoshii, Takuya; Lee, Sunghoon; Suzuki, Rena; Taoka, Noriyuki; Yokoyama, Masafumi; Takenaka, Mitsuru; Takagi, Shinichi [Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Yamada, Hishashi; Hata, Masahiko [Sumitomo Chemical Co. Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294 (Japan); Yasuda, Tetsuji [National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

2012-10-01T23:59:59.000Z

136

Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction  

Science Conference Proceedings (OSTI)

Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 {+-} 0.1 eV and conduction band offset of 1.61 {+-} 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

Lee, Kai-Hsuan; Chen, Chia-Hao [Nano Science Group, National Synchrotron Radiation Research Center, Hsin-Ann Rd. 101, 30076 Hsinchu, Taiwan (China)] [Nano Science Group, National Synchrotron Radiation Research Center, Hsin-Ann Rd. 101, 30076 Hsinchu, Taiwan (China); Chang, Ping-Chuan [Department of Electro-Optical Engineering, Kun Shan University, Dawan Rd. 949, 71003 Tainan, Taiwan (China)] [Department of Electro-Optical Engineering, Kun Shan University, Dawan Rd. 949, 71003 Tainan, Taiwan (China); Chen, Tse-Pu; Chang, Sheng-Po; Chang, Shoou-Jinn [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, University Rd. 1, 70101 Tainan, Taiwan (China)] [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, University Rd. 1, 70101 Tainan, Taiwan (China); Shiu, Hung-Wei; Chang, Lo-Yueh [Nano Science Group, National Synchrotron Radiation Research Center, Hsin-Ann Rd. 101, 30076 Hsinchu, Taiwan (China) [Nano Science Group, National Synchrotron Radiation Research Center, Hsin-Ann Rd. 101, 30076 Hsinchu, Taiwan (China); Department of Physics, National Tsing Hua University, Kuang-Fu Rd. 101, 30013 Hsinchu, Taiwan (China)

2013-02-18T23:59:59.000Z

137

Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation energy on dc and rf characteristics of InAlN/GaN high electron mobility transistors (HEMTs) were investigated. A fixed proton dose of 51015 cm2 with 5, 10, and 15 MeV irradiation energies was used in this study. For the dc characteristics, degradation was observed for sheet resistance, transfer resistance, contact resistivity, saturation drain current, maximum transconductance, reverse-bias gate leakage current, and sub-threshold drain leakage current for all the irradiated HEMTs; however, the degree of the degradation was decreased as the irradiation energy increased. Similar trends were obtained for the rf performance of the devices, with 10% degradation of the unity gain cut-off frequency (fT) and maximum oscillation frequency ( fmax) for the HEMTs irradiated with 15 MeV protons but 30% for 5 MeV proton irradiation. The carrier removal rate was in the range 0.66 1.24 cm1 over the range of proton energies investigated

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Gila, Brent P. [University of Florida, Gainesville; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

138

SiN{sub x}-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms  

Science Conference Proceedings (OSTI)

We analyze the composition profiles within intermixed and non-intermixed AlInGaAs-based multiple quantum wells structures by secondary ion mass spectrometry and observe that the band gap blue shift is mainly attributed to the interdiffusion of In and Ga atoms between the quantum wells and the barriers. Based on these results, several AlInGaAs-based single quantum well (SQW) structures with various compressive strain (CS) levels were grown and their photoluminescence spectra were investigated after the intermixing process involving the encapsulation of thin SiN{sub x} dielectric films on the surface followed by rapid thermal annealing. In addition to the annealing temperature, we report that the band gap shift can be also enhanced by increasing the CS level in the SQW. For instance, at an annealing temperature of 850 Degree-Sign C, the photoluminescence blue shift is found to reach more than 110 nm for the sample with 1.2%-CS SQW, but only 35 nm with 0.4%-CS SQW. We expect that this relatively larger atomic compositional gradient of In (and Ga) between the compressively strained quantum well and the barrier can facilitate the atomic interdiffusion and it thus leads to the larger band gap shift.

Lee, Ko-Hsin; Thomas, Kevin; Gocalinska, Agnieszka; Manganaro, Marina; Corbett, Brian [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland); Pelucchi, Emanuele; Peters, Frank H. [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland); Department of Physics, University College Cork, Cork (Ireland)

2012-11-01T23:59:59.000Z

139

Lateral Al{sub x}Ga{sub 1-x}N power rectifiers with 9.7 kV reverse breakdown voltage  

SciTech Connect

Al{sub x}Ga{sub 1-x}N (x=0--0.25) Schottky rectifiers were fabricated in a lateral geometry employing p{sup +}-implanted guard rings and rectifying contact overlap onto an SiO{sub 2} passivation layer. The reverse breakdown voltage (V{sub B}) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al{sub 0.25}Ga{sub 0.75}N and 6350 V for GaN, respectively, for 100 {mu}m gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of {<=}9.67x10{sup 5}Vcm{sup -1}, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (V{sub B}){sup 2}/R{sub ON}, where R{sub ON} is the on-state resistance, was in the range 94--268 MWcm-2 for all the devices.

Zhang, A. P.; Johnson, J. W.; Ren, F.; Han, J.; Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Redwing, J. M.; Lee, K. P.; Pearton, S. J.

2001-02-05T23:59:59.000Z

140

Above room-temperature operation of InAs/AlGaSb superlattice quantum cascade lasers emitting at 12 {mu}m  

SciTech Connect

The authors report on above-room-temperature operation of InAs/AlGaSb quantum cascade lasers emitting at 12 {mu}m. The laser structures are grown on a n-InAs (100) substrate using solid-source molecular beam epitaxy. An InAs/AlGaSb superlattice is used as an active part and an InAs double plasmon waveguide is used for optical confinement. Results show that increased doping concentration in the injection part of the active region expands the current operation range of the devices, allowing laser operation at and above room temperature. The observed threshold current density is 4.0 kA/cm{sup 2} at 300 K; the maximum operation temperature is 340 K.

Ohtani, K.; Moriyasu, Y.; Ohnishi, H.; Ohno, H. [Laboratory for Nanoelectronics and Semiconductor Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)

2007-06-25T23:59:59.000Z

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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141

Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density  

SciTech Connect

The study is devoted to theoretical explanation of a decrease in the electroluminescence efficiency as the pump current increases, which is characteristic of light-emitting-diode (LED) heterostructures based on AlInGaN. Numerical simulation shows that the increase in the external quantum efficiency at low current densities J {approx} 1 A/cm{sup 2} is caused by the competition between radiative and nonradiative recombination. The decrease in the quantum efficiency at current densities J > 1 A/cm{sup 2} is caused by a decrease in the efficiency of hole injection into the active region. It is shown that the depth of the acceptor energy level in the AlGaN emitter, as well as low electron and hole mobilities in the p-type region, plays an important role in this effect. A modified LED heterostructure is suggested in which the efficiency decrease with the pump current should not occur.

Rozhansky, I. V., E-mail: igor@quantum.ioffe.ru; Zakheim, D. A. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

2006-07-15T23:59:59.000Z

142

Accelerated Publication: Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric  

Science Conference Proceedings (OSTI)

Ga"2O"3(Gd"2O"3) [GGO] 3.5nm-thick, with an in situ Al"2O"3 cap 1.5nm thick, has been directly deposited on Ge substrate without employing interfacial passivation layers. The equivalent oxide thickness (EOT) of the gate stack is 1.38-nm. The metal-oxide-semiconductor ... Keywords: EOT, Germanium, High-? dielectric, MOS

L. K. Chu; T. H. Chiang; T. D. Lin; Y. J. Lee; R. L. Chu; J. Kwo; M. Hong

2012-03-01T23:59:59.000Z

143

Well-defined excited states of self-assembled InAs/InAlGaAs quantum dots on InP (001)  

SciTech Connect

Self-assembled InAs/InAlGaAs quantum dots (QDs) in an InAlGaAs matrix on InP (001) substrates were grown by the alternate growth method (AGQD), where an InAs layer with a thickness of 1 monolayer (ML) and an InAlGaAs layer with a thickness of 1 ML were alternately deposited. Cross-sectional transmission electron microscopy images indicated that the aspect ratio (height/width) for the AGQDs was {approx}0.25, which was higher than {approx}0.10 of conventionally grown InAs QDs. The photoluminescence (PL) peak position for the ground states of the AGQDs was 1.485 {mu}m with a linewidth broadening of 42 meV at room temperature, while the PL linewidth for the conventionally grown QDs was 85 meV. And the peaks for the excited-state transitions were also clearly observed from the excitation-power dependent PL. This is the first observation on the well-defined excited-state transitions from the InP-based InAs QDs, even though there were several reports on the features of the excited states.

Kim, Jin Soo; Lee, Jin Hong; Hong, Sung Ui; Kwack, Ho-Sang; Choi, Byung Seok; Oh, Dae Kon [Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon (Korea, Republic of)

2005-08-01T23:59:59.000Z

144

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

145

Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn{sub 1-x}Mg{sub x}O layers by molecular beam epitaxy  

Science Conference Proceedings (OSTI)

Nonpolar (1120) Al{sub 0.2}Ga{sub 0.8}N/GaN multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (1120) Zn{sub 0.74}Mg{sub 0.26}O templates on r-plane sapphire substrates. The quantum wells exhibit well-resolved photoluminescence peaks in the ultra-violet region, and no sign of quantum confined Stark effect is observed in the complete multiple quantum well series. The results agree well with flat band quantum well calculations. Furthermore, we show that the MQW structures are strongly polarized along the [0001] direction. The origin of the polarization is discussed in terms of the strain anisotropy dependence of the exciton optical oscillator strengths.

Xia, Y.; Vinter, B.; Chauveau, J.-M. [CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne (France); University of Nice Sophia-Antipolis, 06103 Nice (France); Brault, J.; Nemoz, M.; Teisseire, M.; Leroux, M. [CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne (France)

2011-12-26T23:59:59.000Z

146

Long-wavelength laser based on self-assembled InAs quantum dots in InAlGaAs on InP (001)  

SciTech Connect

Seven stacks of self-assembled InAs quantum dots (QDs) separated by 28 nm thick InAlGaAs barriers were grown on InP (001) substrate by a solid-source molecular-beam epitaxy and were investigated by cross-sectional transmission electron microscopy and photoluminescence spectroscopy. Gain guided broad-area lasers with a stripe width of 75 {mu}m were fabricated by using the seven-stacked InAs QD layers with the InAlGaAs-InAlAs material system on InP (001). The lasing operation from InAs QDs was observed up to 260 K and the characteristic temperature of the uncoated QD laser calculated from the temperature dependence of threshold current density was 377 K for temperatures up to 200 K, and 138 K above 200 K. The drastic decrease in the characteristic temperature above 200 K was mainly related to the thermal behavior of carriers in QDs, and possibly the thermal coupling of the QDs to the wetting layer and the waveguide region.

Kim, Jin Soo; Lee, Jin Hong; Hong, Sung Ui; Han, Won Seok; Kwack, Ho-Sang; Lee, Chul Wook; Oh, Dae Kon [Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon (Korea, Republic of)

2004-08-09T23:59:59.000Z

147

NERSC @ SC09  

NLE Websites -- All DOE Office Websites (Extended Search)

conference, recognized globally as the premier international conference on high-performance computing, networking, storage, and analysis. SC09 convenes in Portland, Oregon,...

148

LBNL-4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI  

NLE Websites -- All DOE Office Websites (Extended Search)

4183E-rev1 4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI IA AB BI IL LI IT TY Y I IN N C CA AL LI IF FO OR RN NI IA A: : E EN NV VI IR RO ON NM ME EN NT TA AL L I IM MP PA AC CT TS S A AN ND D D DE EV VI IC CE E P PE ER RF FO OR RM MA AN NC CE E E EX XP PE ER RI IM ME EN NT TA AL L E EV VA AL LU UA AT TI IO ON N O OF F I IN NS ST TA AL LL LE ED D C CO OO OK KI IN NG G E EX XH HA AU US ST T F FA AN N P PE ER RF FO OR RM MA AN NC CE E Brett C. Singer, William W. Delp and Michael G. Apte Indoor Environment Department Atmospheric Sciences Department Environmental Energy Technologies Division July 2011 (Revised February 2012) Disclaimer 1 This document was prepared as an account of work sponsored by the United States Government. While this document is believed to contain correct information, neither the United States Government nor any agency thereof, nor The Regents of the University of California, nor any of

149

Highlights From SC11  

NLE Websites -- All DOE Office Websites (Extended Search)

Highlights From SC11 Highlights From SC11 Highlights From SC11 November 30, 2011 In November 2011, thousands of experts in computing and networking flocked to Seattle, Washington, to participate in tutorials, join panel discussions, lead sessions, give live demonstrations and talks, hold roundtable discussions, help build SCinet-the world's fastest science network-present posters and much more! Here are some highlights from this year's SC11 conference. Berkeley Lab's SC11 Booth - Top left and right photos by David Donofrio Prabhat and Yushu present 100G Demo- Bottom left and right photos courtesy of Yushu Yao. Lab Staff Give Awe-Inspiring Demo of 100 Gbps Capability The demo showed side-by-side presentations of a 5 terabyte dataset streamed from NERSC at 100 Gbps (left) and 10 Gbps (right).

150

Passivation of In{sub 0.53}Ga{sub 0.47}As/ZrO{sub 2} interfaces by AlN atomic layer deposition process  

SciTech Connect

Reducing defects at III-V/high-k interfaces is essential for optimizing devices built on these materials. Here, the role of an interfacial AlN process at In{sub 0.53}Ga{sub 0.47}As/ZrO{sub 2} interfaces is investigated by hard x-ray photoelectron spectroscopy (HAXPES) and capacitance/voltage (C-V) measurements. C-V measurements show a significant reduction in the density of interface traps with the interfacial AlN process and a capping TiN layer. To elucidate the specific role of the AlN process, blanket films with various deposition processes are compared. The AlN process alone (without subsequent dielectric deposition) reduces InGaAs oxide levels below the HAXPES detection limit, even though the AlN is ultimately found to be oxidized into AlO{sub x} with only trace N incorporation, yet AlN passivation provides a lower D{sub it} (density of interface traps) when compared with an H{sub 2}O-based Al{sub 2}O{sub 3} deposition. The AlN process does not passivate against re-oxidation of the InGaAs during an O{sub 3} based ZrO{sub 2} deposition process, but it does provide passivation against As-As development during subsequent TiN deposition. The role of chemical defects in the C-V characteristics is also discussed.

Weiland, C.; Woick, J. C. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Rumaiz, A. K. [National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973 (United States); Price, J.; Lysaght, P. [SEMATECH, 257 Fuller Road, Albany, New York 12203 (United States)

2013-07-21T23:59:59.000Z

151

Thickness Effect of Al-Doped ZnO Window Layer on Damp-Heat Stability of CuInGaSe2 Solar Cells  

DOE Green Energy (OSTI)

We investigated the damp heat (DH) stability of CuInGaSe{sub 2} (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 {micro}m to a modest 0.50 {micro}m over an underlying 0.10-{micro}m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 {micro}m/3 {micro}m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85 C and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

2011-01-01T23:59:59.000Z

152

Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint  

DOE Green Energy (OSTI)

We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 ?m to a modest 0.50 ?m over an underlying 0.10-?m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 ?m/3 ?m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

2011-07-01T23:59:59.000Z

153

B-Sc (Boron - Scandium)  

Science Conference Proceedings (OSTI)

B-Sc crystallographic data...B-Sc crystallographic data Phase Composition, wt% B Pearson symbol Space group (αSc) 0 hP 2 P 6 3 / mmc (βSc) 0 cI 2 Im m ScB 2 33 hP 3 P 6/ mmm ScB 12 73 tI 26 I 4/ mmm ScB 20 (a) ? ? (βB) 100 hR 108 R m (a) Metastable, rhombohedral

154

Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m-plane Al{sub x}Ga{sub 1-x}N films grown on m-plane freestanding GaN substrates by NH{sub 3} source molecular beam epitaxy  

SciTech Connect

In-plane anisotropic lattice relaxation was correlated with the crystal mosaicity and luminescence spectra for m-plane Al{sub x}Ga{sub 1-x}N films grown on a freestanding GaN substrate by NH{sub 3}-source molecular beam epitaxy. The homoepitaxial GaN film exhibited A- and B-excitonic emissions at 8 K, which obeyed the polarization selection rules. For Al{sub x}Ga{sub 1-x}N overlayers, the m-plane tilt mosaic along c-axis was the same as the substrate as far as coherent growth was maintained (x{<=}0.25). However, it became more severe than along the a-axis for lattice-relaxed films (x{>=}0.52). The results are explained in terms of anisotropic lattice and thermal mismatches between the film and the substrate. Nonetheless, all the Al{sub x}Ga{sub 1-x}N films exhibited a near-band-edge emission peak and considerably weak deep emission at room temperature.

Hoshi, T.; Hazu, K.; Ohshita, K.; Kagaya, M.; Onuma, T.; Chichibu, S. F. [CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan); Fujito, K. [Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku 300-1295 (Japan); Namita, H. [Mitsubishi Chemical Group Science and Technology Research Center, Inc., 8-3-1 Chuo, Ami, Inashiki 300-0332 (Japan)

2009-02-16T23:59:59.000Z

155

Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs  

E-Print Network (OSTI)

. heavily doped GaAs 001 substrates at 650 °C with TMG Ga CH3 3 and arsine AsH3 V/III=23 with disilane Si2H6

156

SC Logos | U.S. DOE Office of Science (SC)  

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SC Logos SC Logos About Organization Budget Field Offices Federal Advisory Committees History Scientific and Technical Information Honors & Awards Jobs Brochures, Logos, & Information Resources Brochures Fact Sheets SC Logos Newsletters Connect with SC Contact Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 Brochures, Logos, & Information Resources SC Logos Print Text Size: A A A RSS Feeds FeedbackShare Page Graphical Element Requirements Usage Policy Logo Description Clear Space Padding Scaling Sizing Color Variations Typography Download Official DOE SC co-Branded Logos Download DOE SC co-Branded Logos Usage Policy The DOE SC co-Branded logos should only be obtained directly from the download links on this page. Only unaltered usage is permitted. Usage does

157

Y2, Threading Defect Elimination in GaN Nanostructures  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

158

SC Projects | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Projects Projects Project Assessment (OPA) OPA Home About Project Management SC Projects Review Dates (updated November 2013) Project Construction Photos Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov SC Projects Print Text Size: A A A RSS Feeds FeedbackShare Page SC Projects-Contains information regarding SC projects including project review dates, information on Office of Science Certified Federal Project Directors and Defining the Leadership Traits/Skill Set for a Successful Federal Project Director, and project photos or links to project photo sites. Last modified: 3/18/2013 10:54:36

159

SC e-journals  

Office of Scientific and Technical Information (OSTI)

SC e-journals SC e-journals Home Browse ABOUT/FAQ HELP Desktop access to journals of interest to the Office of Science Search Options Web of Science® Search citations for a wide range of peer-reviewed journals, includes cited reference searching and author identification tools. Web of Knowledge Journal Citation Reports Publisher Search Options* Many publishers provide search capabilities, including: American Chemical Society American Physical Society National Academy of Sciences *(results may include non-subscribed titles) Spotlight Neutron Diffraction Observations of Interstitial Protons in Dense Ice ORNL neutrons paint an altogether new picture of ice ORNL neutrons paint an altogether new picture of ice Image: Oak Ridge National Laboratory Neutron diffraction observations of interstitial protons in dense ice

160

PSRP SC Updated  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Name: Office of Science Name: Office of Science PSRP Lead Program Office and/or Laboratory/Site Office: Office of Science PSRP Lead Manager: Kathleen Klausing phone: 301-903-3541 e-mail: Kathleen.Klausing@science.doe.gov address: F-228, GTN Does this program align with an existing PART program? Y Does this program align with an existing CFDA program? N Office of Science (SC) Allocation of the American Recovery and Reinvestment Act (Recovery Act) funding. The Recovery Act appropriation for SC is $1.6B. Included as part of the Recovery Act are ongoing construction projects to deliver major scientific user facilities for the nation; investments in existing scientific user facilities, which host more than 20,000 users each year; many important energy-related and basic research investments;

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Effective passivation of In{sub 0.2}Ga{sub 0.8}As by HfO{sub 2} surpassing Al{sub 2}O{sub 3} via in-situ atomic layer deposition  

SciTech Connect

High {kappa} gate dielectrics of HfO{sub 2} and Al{sub 2}O{sub 3} were deposited on molecular beam epitaxy-grown In{sub 0.2}Ga{sub 0.8}As pristine surface using in-situ atomic-layer-deposition (ALD) without any surface treatment or passivation layer. The ALD-HfO{sub 2}/p-In{sub 0.2}Ga{sub 0.8}As interface showed notable reduction in the interfacial density of states (D{sub it}), deduced from quasi-static capacitance-voltage and conductance-voltage (G-V) at room temperature and 100 Degree-Sign C. More significantly, the midgap peak commonly observed in the D{sub it}(E) of ALD-oxides/In{sub 0.2}Ga{sub 0.8}As is now greatly diminished. The midgap D{sub it} value decreases from {>=}15 Multiplication-Sign 10{sup 12} eV{sup -1} cm{sup -2} for ALD-Al{sub 2}O{sub 3} to {approx}2-4 Multiplication-Sign 10{sup 12} eV{sup -1} cm{sup -2} for ALD-HfO{sub 2}. Further, thermal stability at 850 Degree-Sign C was achieved in the HfO{sub 2}/In{sub 0.2}Ga{sub 0.8}As, whereas C-V characteristics of Al{sub 2}O{sub 3}/p-In{sub 0.2}Ga{sub 0.8}As degraded after the high temperature annealing. From in-situ x-ray photoelectron spectra, the AsO{sub x}, which is not the oxidized state from the native oxide, but is an induced state from adsorption of trimethylaluminum and H{sub 2}O, was found at the ALD-Al{sub 2}O{sub 3}/In{sub 0.2}Ga{sub 0.8}As interface, while that was not detected at the ALD-HfO{sub 2}/In{sub 0.2}Ga{sub 0.8}As interface.

Chang, Y. H.; Chiang, T. H. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, C. A.; Liu, Y. T.; Lin, H. Y.; Huang, M. L.; Kwo, J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M. [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

2012-10-22T23:59:59.000Z

162

Accelerated aging of GaAs concentrator solar cells  

DOE Green Energy (OSTI)

An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

Gregory, P.E.

1982-04-01T23:59:59.000Z

163

Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount  

SciTech Connect

Vertical and flip-chip light-emitting diode (LED) chips are compared from the viewpoint of the behavior of current spreading in the active region and the distribution of local temperatures and thermal resistances of chips. AlGaInN LED chips of vertical design are fabricated using Si as a submount and LED flipchips were fabricated with the removal of a sapphire substrate. The latter are also mounted on a Si submount. The active regions of both chips are identical and are about 1 mm{sup 2} in size. It is shown that both the emittance of the crystal surface in the visible range and the distribution of local temperatures estimated from radiation in the infrared region are more uniform in crystals of vertical design. Heat removal from flip-chips is insufficient in regions of the n contact, which do not possess good thermal contact with the submount. As a result, the total thermal resistances between the p-n junction and the submount both for the vertical chips and for flip-chips are approximately 1 K/W. The total area of the flip-chips exceeds that of the vertical design chips by a factor of 1.4.

Markov, L. K., E-mail: l.markov@mail.ioffe.ru; Smirnova, I. P.; Pavlyuchenko, A. S. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kukushkin, M. V.; Vasil'eva, E. D. [ZAO Innovation 'Tetis' (Russian Federation); Chernyakov, A. E. [Russian Academy of Sciences, Science-and-Technology Microelectronics Center (Russian Federation); Usikov, A. S. [De Core Nanosemiconductors Ltd. (India)

2013-03-15T23:59:59.000Z

164

GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide  

SciTech Connect

The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Alian, A.; Heyns, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Afanas'ev, V. V. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium)

2011-04-01T23:59:59.000Z

165

SC FPD 360 Mentoring | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SC FPD 360 Mentoring Project Assessment (OPA) OPA Home About OPA Project Management SC Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Certified Federal...

166

Ga Air Compressor, Ga Air Compressor Products, Ga Air ...  

U.S. Energy Information Administration (EIA)

Ga Air Compressor, You Can Buy Various High Quality Ga Air Compressor Products from Global Ga Air Compressor Suppliers and Ga Air Compressor ...

167

Other Participants 2004 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

, Evans , GA Lamp High School , Montgomery , AL Liberty Christian Academy , Jerome , ID Lincoln High School , Portland , OR Milby High School , Houston , TX Mira Loma High School...

168

DOE/SC-ARM-XXXX DOE/SC-ARM-0706 DOE/SC-ARM-0805  

NLE Websites -- All DOE Office Websites (Extended Search)

XXXX XXXX DOE/SC-ARM-0706 DOE/SC-ARM-0805 3 Table of Contents Program Overview ............................................................................................................................................................ 4 The Importance of Clouds and Radiation for Climate Change .................................................................................... 4 ARM Climate Research Facility ................................................................................................................................... 4 Sites Around the World Enable Real Observations ......................................................................................................... 5 Setting the Standard for Ground-Based Climate Observations ........................................................................................

169

Electron transport in an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well with a {delta}-Si doped barrier in high electric fields  

Science Conference Proceedings (OSTI)

The electron conduction in a two-dimensional channel of an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well (QW) with a {delta}-Si doped barrier has been investigated. It is shown that the introduction of thin InAs barriers into the QW reduces the electron scattering rate from the polar optical and interface phonons localized in the QW and increases the electron mobility. It is found experimentally that the saturation of the conduction current in the In{sub 0.53}Ga{sub 0.47}As channel in strong electric fields is determined by not only the sublinear field dependence of the electron drift velocity, but also by the decrease in the electron concentration n{sub s} with an increase in the voltage across the channel. The dependence of n{sub s} on the applied voltage is due to the ionized-donor layer located within the {delta}-Si doped In{sub 0.52}Al{sub 0.48}As barrier and oriented parallel to the In{sub 0.53}Ga{sub 0.47}As QW.

Vasil'evskii, I. S.; Galiev, G. B.; Matveev, Yu. A.; Klimov, E. A.; Pozela, J., E-mail: pozela@pfi.lt [Russian Academy of Sciences, Institute of Microwave Semiconductor Electronics (Russian Federation); Pozela, K.; Suziedelis, A.; Paskevic, C.; Juciene, V. [Semiconductor Physics Institute (Lithuania)

2010-07-15T23:59:59.000Z

170

DOE/SC-ARM-0903  

NLE Websites -- All DOE Office Websites (Extended Search)

r.effects.on.the.Earth's.energy.balance.. In.1989,.the.U.S..Department.of.Energy.(DOE).Office.of. Science.created.the.Atmospheric.Radiation.Measurement. (ARM).Program.to.address.sc...

171

CMS_SC4_PMG  

NLE Websites -- All DOE Office Websites (Extended Search)

week functionality rerun of of goals of SC3 * Demonstration and preparation for the 2006 Data Challenge CSA06 * July and August CMS will produce 25M events per month (roughly 1TB...

172

DiScLAimEr  

NLE Websites -- All DOE Office Websites (Extended Search)

mAy 2011 ii u.S. Department of Energy Advanced carbon Dioxide capture r&D program: Technology update, may 2011 DiScLAimEr This report was prepared as an account of work sponsored...

173

NERSC Training at SC11  

NLE Websites -- All DOE Office Websites (Extended Search)

NERSC staff will be participating in a number of tutorials Nov. 13-14 at SC11 in Seattle. S10: Scaling to Petascale and Beyond: Performance Analysis and Optimization of...

174

Sample Questions | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SC Home SC Organization SC Jobs Contact SC DOE Home U.S. DEPARTMENT OF ENERGY | Office of Science Search Section SC Site Search DOE Phonebook DOE Site Search BER Abstracts DOE...

175

P8, Fabrication of Subwavelength Pillar Arrays on GaAs by Confined ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

176

Structure and magnetic properties of the Al{sub 1-x}Ga{sub x}FeO{sub 3} family of oxides: A combined experimental and theoretical study  

Science Conference Proceedings (OSTI)

Magnetic properties of the Al{sub 1-x}Ga{sub x}FeO{sub 3} family of oxides crystallizing in a non-centrosymmetric space group have been investigated in detail along with structural aspects by employing X-ray and neutron diffraction, Moessbauer spectroscopy and other techniques. The study has revealed the occurrence of several interesting features related to unit cell parameters, site disorder and ionic size. Using first-principles density functional theory based calculations, we have attempted to understand how magnetic ordering and related properties in these oxides depend sensitively on disorder at the cation site. The origin and tendency of cations to disorder and the associated properties are traced to the local structure and ionic sizes. -- Graphical abstract: We have studied both experimentally and theoretically the important role of disorder at the cation site on magnetic and related properties of the Al{sub 1-x}Ga{sub x}FeO{sub 3} family of oxides crystallizing in a non-centrosymmetric space group. Display Omitted Research highlights: {yields} Interesting observations on cation site disorder, cell parameters and ionic size. {yields} Cation site disorder explains magnetic ordering. {yields} Demonstrates the importance of the A-site cations.

Saha, Rana; Shireen, Ajmala [Chemistry and Physics of Materials Unit, New Chemistry Unit, Theoretical Science Unit and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560 064 (India); Bera, A.K. [Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India); Shirodkar, Sharmila N.; Sundarayya, Y.; Kalarikkal, Nandakumar [Chemistry and Physics of Materials Unit, New Chemistry Unit, Theoretical Science Unit and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560 064 (India); Yusuf, S.M. [Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India); Waghmare, Umesh V. [Chemistry and Physics of Materials Unit, New Chemistry Unit, Theoretical Science Unit and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560 064 (India); Sundaresan, A., E-mail: sundaresan@jncasr.ac.i [Chemistry and Physics of Materials Unit, New Chemistry Unit, Theoretical Science Unit and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560 064 (India); Rao, C.N.R, E-mail: cnrrao@jncasr.ac.i [Chemistry and Physics of Materials Unit, New Chemistry Unit, Theoretical Science Unit and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560 064 (India)

2011-03-15T23:59:59.000Z

177

SC Laboratory Appraisal Process | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SC Laboratory SC Laboratory Appraisal Process Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Laboratory Planning Process Work for Others in the Office of Science Laboratory Directed Research and Development (LDRD) Technology Transfer DOE National Laboratories Contact Information Laboratory Policy and Evaluation U.S. Department of Energy SC-32/Forrestal Building

178

Category:Charleston, SC | Open Energy Information  

Open Energy Info (EERE)

SC SC Jump to: navigation, search Go Back to PV Economics By Location Media in category "Charleston, SC" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Charleston SC South Carolina Electric&Gas Co.png SVFullServiceRestauran... 67 KB SVMidriseApartment Charleston SC South Carolina Electric&Gas Co.png SVMidriseApartment Cha... 66 KB SVQuickServiceRestaurant Charleston SC South Carolina Electric&Gas Co.png SVQuickServiceRestaura... 64 KB SVSecondarySchool Charleston SC South Carolina Electric&Gas Co.png SVSecondarySchool Char... 72 KB SVStandAloneRetail Charleston SC South Carolina Electric&Gas Co.png SVStandAloneRetail Cha... 67 KB SVHospital Charleston SC South Carolina Electric&Gas Co.png SVHospital Charleston ...

179

SC Introduction to Risk Management | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

are here Home SC Introduction to Risk Management SC Introduction to Risk Management SC Introduction to Risk Management More Documents & Publications LPP Risk Management Plan...

180

SC e-journals About/FAQ  

Office of Scientific and Technical Information (OSTI)

About/FAQ SC e-journals provides the Office of Science (SC) management and staff electronic access to key peer-reviewed scientific journals. Currently, over 1,600 journals may be accessed via the SC e-journals website. Available titles have been identified by SC Programs as being of specific interest or are made available via Departmental consortium arrangements when possible. The journal collection includes titles of broad interest to the Department as well as subject-specific titles. Journal subscriptions are generally renewed and the SC e-journals collection updated on an annual basis. SC e-journals is developed and maintained by the Office of Scientific and Technical Information. Q. Who can access SC e-journals? A. SC e-journals is an Office of Science service. Copyrighted

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181

2011 Annual Planning Summary for Science (SC)  

Energy.gov (U.S. Department of Energy (DOE))

The ongoing and projected Environmental Assessments and Environmental Impact Statements for 2011 and 2012 within Science (SC).

182

Synthesis and structural characterization of the ternary Zintl phases AE{sub 3}Al{sub 2}Pn{sub 4} and AE{sub 3}Ga{sub 2}Pn{sub 4} (AE=Ca, Sr, Ba, Eu; Pn=P, As)  

Science Conference Proceedings (OSTI)

Ten new ternary phosphides and arsenides with empirical formulae AE{sub 3}Al{sub 2}Pn{sub 4} and AE{sub 3}Ga{sub 2}Pn{sub 4} (AE=Ca, Sr, Ba, Eu; Pn=P, As) have been synthesized using molten Ga, Al, and Pb fluxes. They have been structurally characterized by single-crystal and powder X-ray diffraction to form with two different structures-Ca{sub 3}Al{sub 2}P{sub 4}, Sr{sub 3}Al{sub 2}As{sub 4}, Eu{sub 3}Al{sub 2}P{sub 4}, Eu{sub 3}Al{sub 2}As{sub 4}, Ca{sub 3}Ga{sub 2}P{sub 4}, Sr{sub 3}Ga{sub 2}P{sub 4}, Sr{sub 3}Ga{sub 2}As{sub 4}, and Eu{sub 3}Ga{sub 2}As{sub 4} crystallize with the Ca{sub 3}Al{sub 2}As{sub 4} structure type (space group C2/c, Z=4); Ba{sub 3}Al{sub 2}P{sub 4} and Ba{sub 3}Al{sub 2}As{sub 4} adopt the Na{sub 3}Fe{sub 2}S{sub 4} structure type (space group Pnma, Z=4). The polyanions in both structures are made up of TrPn{sub 4} tetrahedra, which share common corners and edges to form {sup 2}{sub {infinity}}[TrPn{sub 2}]{sub 3-} layers in the phases with the Ca{sub 3}Al{sub 2}As{sub 4} structure, and {sup 1}{sub {infinity}}[TrPn{sub 2}]{sub 3-} chains in Ba{sub 3}Al{sub 2}P{sub 4} and Ba{sub 3}Al{sub 2}As{sub 4} with the Na{sub 3}Fe{sub 2}S{sub 4} structure type. The valence electron count for all of these compounds follows the Zintl-Klemm rules. Electronic band structure calculations confirm them to be semiconductors. - Graphical abstract: AE{sub 3}Al{sub 2}Pn{sub 4} and AE{sub 3}Ga{sub 2}Pn{sub 4} (AE=Ca, Sr, Ba, Eu; Pn=P, As) crystallize in two different structures-Ca{sub 3}Al{sub 2}P{sub 4}, Sr{sub 3}Al{sub 2}As{sub 4}, Eu{sub 3}Al{sub 2}P{sub 4}, Eu{sub 3}Al{sub 2}As{sub 4}, Ca{sub 3}Ga{sub 2}P{sub 4}, Sr{sub 3}Ga{sub 2}P{sub 4}, Sr{sub 3}Ga{sub 2}As{sub 4}, and Eu{sub 3}Ga{sub 2}As{sub 4}, are isotypic with the previously reported Ca{sub 3}Al{sub 2}As{sub 4} (space group C2/c (No. 15)), while Ba{sub 3}Al{sub 2}P{sub 4} and Ba{sub 3}Al{sub 2}As{sub 4} adopt a different structure known for Na{sub 3}Fe{sub 2}S{sub 4} (space group Pnma (No. 62). The polyanions in both structures are made up of TrPn{sub 4} tetrahedra, which by sharing common corners and edges, form {sup 2}{sub {infinity}}[TrPn{sub 2}]{sub 3-}layers in the former and {sup 1}{sub {infinity}}[TrPn{sub 2}]{sub 3-} chains in Ba{sub 3}Al{sub 2}P{sub 4} and Ba{sub 3}Al{sub 2}As{sub 4}. Highlights: Black-Right-Pointing-Pointer AE{sub 3}Ga{sub 2}Pn{sub 4} (AE=Ca, Sr, Ba, Eu; Pn=P, As) are new ternary pnictides. Black-Right-Pointing-Pointer Ba{sub 3}Al{sub 2}P{sub 4} and Ba{sub 3}Al{sub 2}As{sub 4} adopt the Na{sub 3}Fe{sub 2}S{sub 4} structure type. Black-Right-Pointing-Pointer The Sr- and Ca-compounds crystallize with the Ca{sub 3}Al{sub 2}As{sub 4} structure type. Black-Right-Pointing-Pointer The valence electron count for all title compounds follows the Zintl-Klemm rules.

He, Hua; Tyson, Chauntae; Saito, Maia [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716 (United States); Bobev, Svilen, E-mail: bobev@udel.edu [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716 (United States)

2012-04-15T23:59:59.000Z

183

Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interface Self-cleaning by Atomic Layer Deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As  

SciTech Connect

The Synchrotron Radiation Photoemission Spectroscopic (SRPES) study was conducted to (a) investigate the surface chemistry of In{sub 0.53}Ga{sub 0.47}As and In{sub 0.52}Al{sub 0.48}As post chemical and thermal treatments, (b) construct band diagram and (c) investigate the interface property of HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As and HfO{sub 2}/In{sub 0.52}Al{sub 0.48}As. Dilute HCl and HF etch remove native oxides on In{sub 0.53}Ga{sub 0.47}As and In{sub 0.52}Al{sub 0.47}As, whereas in-situ vacuum annealing removes surface arsenic pile-up. After the atomic layer deposition of HfO{sub 2}, native oxides were considerably reduced compared to that in as-received epi-layers, strongly suggesting the self-clean mechanism. Valence and conduction band offsets are measured to be 3.37 {+-} 0.1eV, 1.80 {+-} 0.3eV for In{sub 0.53}Ga{sub 0.47}As and 3.00 {+-} 0.1eV, 1.47 {+-} 0.3eV for In{sub 0.52}Al{sub 0.47}As, respectively.

Kobayashi, Masaharu; /SLAC, SSRL; Chen, P.T.; Sun, Y.; Goel, N.; Majhi, P.; Garner, M; Tsai, W.; Pianetta, P.; Nishi, Y.; /SLAC, SSRL

2008-10-31T23:59:59.000Z

184

SC Johnson Waxdale Plant | Open Energy Information  

Open Energy Info (EERE)

SC Johnson Waxdale Plant SC Johnson Waxdale Plant Jump to: navigation, search Name SC Johnson Waxdale Plant Facility SC Johnson Waxdale Plant Sector Wind energy Facility Type Community Wind Facility Status In Service Owner SC Johnson Developer SC Johnson Energy Purchaser SC Johnson Location Sturtevant WI Coordinates 42.71313982°, -87.88755655° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.71313982,"lon":-87.88755655,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

185

HH8, Characterization of Thin InAlP Native Oxide Gate Dielectric ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

186

BB2, Novel Cs-Free GaN Photocathodes  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

187

SC Systems and Operations (SCSO) Division | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SC Systems SC Systems and Operations (SCSO) Division Business Policy and Operations (BPO) BPO Home Leadership Organization Chart .pdf file (195KB) Business Management and Planning (BMP) Division SC Systems and Operations (SCSO) Division Contact Information Business Policy & Operations U.S. Department of Energy SC-45/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-0192 F: (301) 903-2481 More Information » SC Systems and Operations (SCSO) Division Print Text Size: A A A RSS Feeds FeedbackShare Page The SC Systems and Operations Division (SCSO) provides support for the SC HQ users in the areas of operations and maintenance for SC's network infrastructure, operational applications, cyber security, Science web sites and portals, COOP/ disaster recovery, IT property and asset management, and

188

Design of Precipitation Strengthened Al-Sc-Zr-X Alloys ...  

Science Conference Proceedings (OSTI)

Exploration of new low-alloy aluminum systems may introduce improved ... Frequency Modulation Effect on the Solidification of Alloy 718 Fusion Zone.

189

M.Sc.Info-Veranstaltung, 21. Juni 2011 M.Sc. Chemie und Molecular Science  

E-Print Network (OSTI)

M.Sc.Info-Veranstaltung, 21. Juni 2011 M.Sc. Chemie und Molecular Science an der FAU Erlangen-Nürnberg Rainer Fink - Studiendekan Chemie / Mol.Sci. - #12;M.Sc.Info-Veranstaltung, 21. Juni 2011 Grundzüge der Masterstudiengänge Chemie und Molecular Science Qualifikation zu den Masterstudiengängen Modulwahl (Chemie

Stummer, Wolfgang

190

Modulhandbuch Informationswirtschaft (B.Sc.)  

E-Print Network (OSTI)

.educeth.ethz.ch «Ausbildung ist eine langfristige Investition, die den Menschen als Ganzes formt.» Heidi Wunderli

191

Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated Circuits  

Science Conference Proceedings (OSTI)

A new (AlGa)As/GaAs MODFET integrated circuit simulator is described. Our simulator is a customized version of SPICE incorporating the extended charge control model for MODFET's and the velocity saturation model for ungated FET's used as the load devices. ...

Choong H. Hyun; M. S. Shur; N. C. Cirillo

2006-11-01T23:59:59.000Z

192

SC Introduction to Risk Management  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

OF OF SCIENCE Office of Science Risk Management November 4, 2009 Ray Won Office of Project Assessment Office of Science, U.S. Department of Energy Office of Science, U.S. Department of Energy http://www.science.doe.gov/opa/ 2 AGENDA AGENDA Wednesday, November 4, 2009, Building 2714, Oak Ridge 2:15 p.m. Introduction to SC Risk Management 2:25 p.m. Spallation Neutron Source 2:40 p.m. ORNL Risk Management Process 2:55 p.m. National Synchrotron Light Source II 3:10 p.m. Questions 3:30 p.m. End OFFICE OF SCIENCE 3 DOE Organization DOE Organization OFFICE OF SCIENCE Federal Energy Regulatory Commission Office of the Under Secretary for Nuclear Security/ Administrator for National Nuclear Security Administration Thomas P. D'Agostino Chief of Staff *The Deputy Secretary also serves as the Chief Operating Officer.

193

NERSC Training at SC11  

NLE Websites -- All DOE Office Websites (Extended Search)

HPC Archive Solutions Made Simple HPC Archive Solutions Made Simple S13: HPC Archive Solutions Made Simple Sunday, Nov. 13 1:30-5:00 Alan Powers, CSC Jason Hick, NERSC Matt Cary, NASA Advanced Simulation Facility http://sc11.supercomputing.org/schedule/event_detail.php?evid=tut168 ABSTRACT: This tutorial provides an overview of the different hardware technologies and software features used in HPC archival storage systems. The tutorial will touch on the following topics: tape libraries, tape drives, disk cache, HSM, data movers, migration, data recall, storage policies, tape pools, tape compaction, tape striping, archive metrics, data integrity, importing and exporting data, and disaster recovery. Other topics of interest developing an RFP. # How to determine recall and migration policies by profiling existing data files? # What requirements to

194

U.S. CMS S&C PMG  

NLE Websites -- All DOE Office Websites (Extended Search)

Sep 13, 2002 U.S. CMS S&C PMG 1 Lothar A T Bauerdick Fermilab Revised Project Plan Revised Project Plan for US CMS S&C for US CMS S&C LATBauerdick LATBauerdick Fermilab...

195

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

196

Location | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Assessment (OPA) OPA Home About OPA Director Staff & Responsibilities Location Project Management SC Projects Other Links SC Federal Project Directors (FPD) and FPD Resources...

197

Other Links | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Other Links Project Assessment (OPA) OPA Home About OPA Project Management SC Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project...

198

, 2004, 46, . 1 GaAs/AlGaAs  

E-Print Network (OSTI)

, S. Rumyantsev, J.-Q. L¨u, M.S. Shur, C.A. Saylor, L.C. Brunel. Appl. Phys. Lett. 80, 18, 3433 (2002. L¨u, R. Gaska, M.S. Shur, F. Simin, X. Hu, M. Asif Khan, C.A. Saylor, L.C. Brunel. J. Appl. Phys. 91, , N. Dyakonova , E. Kaminska , A. Piotrowska , K. Golaszewska , M.S. Shur , 603950 , GES

Levelut, Claire

199

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells  

E-Print Network (OSTI)

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells H. C. Chui, S. M. Lord report the first observation of intersubband transitions in In,Ga, -#s(y=O.3,0.5)/ AlGaAs quantum wells. These quantum wells were grown on a GaAs substrate with a linearly graded InGaAs buffer to achieve strain

Fejer, Martin M.

200

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

DOE Green Energy (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

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201

SC-CH FACTS Customer Service  

NLE Websites -- All DOE Office Websites (Extended Search)

SC-CH FACTS SC-CH FACTS Customer Service Office of Communications P (630) 252-2110 F (630) 252-9473 Address 9800 South Cass Ave. Argonne, Illinois 60439 Websites Chicago Office www.ch.doe.gov Office of Science http://science.energy.gov/ U.S. Department of Energy http://energy.gov/ CH Factoids Who We Are ... Our Mission The Office of Science - Chicago Office (SC-CH) is a field office of the U.S. Department of Energy (DOE), a Cabinet-level agency with

202

Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells  

Science Conference Proceedings (OSTI)

In this article, Ga-doped Al-zinc-oxide (GAZO)/titanium-doped indium-tin-oxide (ITIO) bi-layer films were deposited onto glass substrates by direct current (dc) magnetron sputtering. The bottom ITIO film, with a thickness of 200 nm, was sputtered onto the glass substrate. The ITIO film was post-annealed at 350 deg. C for 10-120 min as a seed layer. The effect of post-annealing conditions on the morphologies, electrical, and optical properties of ITIO films was investigated. A GAZO layer with a thickness of 1200 nm was continuously sputtered onto the ITIO bottom layer. The results show that the properties of the GAZO/ITIO films were strongly dependent on the post-annealed conditions. The spectral haze (T{sub diffuse}/T{sub total}) of the GAZO/ITIO bi-layer films increases upon increasing the post-annealing time. The haze and resistivity of the GAZO/ITIO bi-layer films were improved with the post-annealed process. After optimizing the deposition and annealing parameters, the GAZO/ITIO bi-layer film has an average transmittance of 83.20% at the 400-800 nm wavelengths, a maximum haze of 16%, and the lowest resistivity of 1.04 x 10{sup -3}{Omega} cm. Finally, the GAZO/ITIO bi-layer films, as a front electrode for silicon-based thin film solar cells, obtained a maximum efficiency of 7.10%. These encouraging experimental results have potential applications in GAZO/ITIO bi-layer film deposition by in-line sputtering without the wet-etching process and enable the production of highly efficient, low-cost thin film solar cells.

Wang, Chao-Chun; Wuu, Dong-Sing; Lin, Yang-Shih; Lien, Shui-Yang; Huang, Yung-Chuan; Liu, Chueh-Yang; Chen, Chia-Fu; Nautiyal, Asheesh; Lee, Shuo-Jen [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Department of Materials Science and Engineering, MingDao University, Changhua 52345, Taiwan (China); Department of Mechanical Engineering, Yuan Ze University, Taoyuan 320, Taiwan (China)

2011-11-15T23:59:59.000Z

203

N E R SC Annual Repor  

NLE Websites -- All DOE Office Websites (Extended Search)

E R SC Annual Repor t 2002 National Energ y Research Scientific Computing Center 2002 AN N U A L R E P O R T This work was supported by the Director, Office of Science, Office of...

204

Seaborg Briefs Kennedy| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SC Home SC Organization SC Jobs Contact SC DOE Home U.S. DEPARTMENT OF ENERGY | Office of Science Search Section SC Site Search DOE Phonebook DOE Site Search BER Abstracts DOE...

205

LADWP Science Bowl | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SC Home SC Organization SC Jobs Contact SC DOE Home U.S. DEPARTMENT OF ENERGY | Office of Science Search Section SC Site Search DOE Phonebook DOE Site Search BER Abstracts DOE...

206

Glenn Seaborg Trail | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SC Home SC Organization SC Jobs Contact SC DOE Home U.S. DEPARTMENT OF ENERGY | Office of Science Search Section SC Site Search DOE Phonebook DOE Site Search BER Abstracts DOE...

207

X=Bi, Sb, Al, Ga  

Science Conference Proceedings (OSTI)

... Nd-Fe-B Permanent Magnets Unique Exchange Bias Induced by Antiferromagnetic Cr-oxide ZnO-graphene Hybrid Quantum Dots Light Emitting Diode...

208

InGaAs and Ge MOSFETs with high ? dielectrics  

Science Conference Proceedings (OSTI)

InGaAs and Ge MOSFETs with high @k's are now the leading candidates for technology beyond the 15nm node CMOS. The UHV-Al"2O"3/Ga"2O"3(Gd"2O"3) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities ... Keywords: Atomic layer deposition, Germanium, High ? dielectrics, III-V Compound semiconductor, MOSFETs, Molecular beam epitaxy

W. C. Lee; P. Chang; T. D. Lin; L. K. Chu; H. C. Chiu; J. Kwo; M. Hong

2011-04-01T23:59:59.000Z

209

China Ga Air Compressor, China Ga Air Compressor Products ...  

U.S. Energy Information Administration (EIA)

China Ga Air Compressor, China Ga Air Compressor Suppliers and Manufacturers Directory - Source a Large Selection of Ga Air Compressor Products at ...

210

Connect with SC | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Connect with SC Connect with SC About Organization Budget Field Offices Federal Advisory Committees History Scientific and Technical Information Honors & Awards Jobs Brochures, Logos, & Information Resources Brochures Fact Sheets SC Logos Newsletters Connect with SC Contact Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 Brochures, Logos, & Information Resources Connect with SC Print Text Size: A A A RSS Feeds FeedbackShare Page Laboratories Social Media Ames Laboratory Facebook External link Twitter External link YouTube External link Flickr External link Argonne National Laboratory Facebook External link Twitter External link YouTube External link Flickr External link Brookhaven National Laboratory

211

SC e-journals, Engineering  

Office of Scientific and Technical Information (OSTI)

Engineering Engineering ACM Transactions on Design Automation of Electronic Systems (TODAES) ACM Transactions on Embedded Computing Systems (TECS) ACS Nano Acta Mechanica Acta Mechanica Sinica Adsorption Advanced Engineering Materials Advanced Powder Technology Advanced Robotics Advances in Computational Mathematics Advances In Engineering Software Advances in Materials Science and Engineering - OAJ Advances in Mathematical Engineering - OAJ Advances in Optics and Photonics AlChE Journal Algorithmica American Journal of Engineering and Applied Sciences - OAJ Analog Integrated Circuits and Signal Processing Annals of Nuclear Energy Annual Review of Fluid Mechanics Annual Review of Materials Research Applicable Algebra in Engineering, Communication and Computing Applied Composite Materials

212

SC e-journals, Chemistry  

Office of Scientific and Technical Information (OSTI)

Chemistry Chemistry Accounts of Chemical Research Accreditation and Quality Assurance ACS Chemical Biology ACS Nano Acta Biotheoretica Acta Materialia Acta Neuropathologica Adsorption Advanced Engineering Materials Advances in Physical Chemistry - OAJ AlChE Journal Amino Acids Analyst Analytica Chimica Acta Analytical and Bioanalytical Chemistry Analytical Biochemistry Analytical Chemistry Analytical Sciences - OAJ Angewandte Chemie - International Edition Annual Review of Analytical Chemistry Annual Review of Biochemistry Annual Review of Biophysics Annual Review of Materials Research Annual Review of Physical Chemistry Antimicrobial Agents and Chemotherapy Applied Geochemistry Applied Radiation and Isotopes Applied Surface Science Applied Thermal Engineering Aquatic Geochemistry

213

SC e-journals Help page  

Office of Scientific and Technical Information (OSTI)

Help Help Table of Contents General User Information Access Technical Requirements Desktop Shortcut Archived Journal Issues Open Access Journals Spotlight Spotlight Archive Alerts E-mailing Search Results Need Help With Searching? 'Web of Science' Search General Search Tips General User Information Access: Access to this site is available only through work stations and remote computers connected to the internet via the Office of Science (SC) Lan. Subscription journals accessible via this site are governed by license agreements and may be used by SC Staff whose duty stations are located at DOE Headquarters. SC e-journals 3.0: The Office of Science staff is now provided the latest technology in search and retrieval with the new Federated Search provided with this upgrade. Search results are more likely to meet individual user

214

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs  

E-Print Network (OSTI)

The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate ...

Piner, Edwin L.

215

In situ atomic layer deposition and synchrotron-radiation photoemission study of Al2O3 on pristine n-GaAs(0 0 1)-46 surface  

Science Conference Proceedings (OSTI)

This work presents the in situ reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM) and synchrotron-radiation photoemission studies for the morphological and interfacial chemical characterization of in situ atomic ... Keywords: Atomic layer deposition, GaAs, Molecular beam epitaxy, Synchrotron-radiation photoemission

Y. H. Chang; M. L. Huang; P. Chang; J. Y. Shen; B. R. Chen; C. L. Hsu; T. W. Pi; M. Hong; J. Kwo

2011-07-01T23:59:59.000Z

216

NUCLEAR ENGINEERING & RADIOLOG SC BSE Plan Requirements  

E-Print Network (OSTI)

NUCLEAR ENGINEERING & RADIOLOG SC BSE Plan Requirements 1 Campus: UMICH RG = Requirement Group Career: UENG RQ = Requirement Program: LN = Line Plan: 6000BSE RG 6412 NUCLEAR ENGINEERING no exceptions here) RG 6521 NUCLEAR ENGINEERING AND RADIOLOGICAL SCIENCES RESIDENCY, GPA REQUIREMENTS Effective

Shyy, Wei

217

SC In Your State | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SC In Your State SC In Your State Universities Interactive Grants Map SC In Your State University Science Highlights Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 SC In Your State Print Text Size: A A A RSS Feeds FeedbackShare Page The Office of Science directly supports scientists, engineers, and students in all 50 States and the District of Columbia. Each annual report available for download here includes a State-by-State summary of the Office of Science's research investments across the country. Note: Funding totals are represented in thousands. Fiscal Year 2012 .xlsx file (551KB) Fiscal Year 2011 .pdf file (520KB) Fiscal Year 2010 .pdf file (501KB) Fiscal Year 2009 .pdf file (2.0MB) Fiscal Year 2008 .pdf file (758KB)

218

SC Federal Project Directors | U.S. DOE Office of Science (SC...  

Office of Science (SC) Website

A A A RSS Feeds FeedbackShare Page Listing of latest certified SC FPDs and resources for use by FPDs: FPD list FPD leadership skills .pdf file (29KB) Last modified: 6172013...

219

Takeeda Smith | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Programs U.S. Department of Energy SC-2Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 F: (202) 586-4120 E: sc.science@science.doe.gov...

220

FY 2012 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

2012 Energy and Water Development Appropriations House Senate Conference Enacted Bill H.R. 2354 .pdf file (225KB) (SC Only) .pdf file (26KB) H.R.2354 .pdf file (454KB) (SC Only)...

Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

JJ3, Anisotropic Carrier Mobility in GaN Quantum Well  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

222

LATE NEWS: L7, Molecular Beam Epitaxy of N-Polar InGaN  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

223

Y5, Electrochemical Etching of GaN and Its Applications  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

224

Collapse for Higher Gate Voltages in N-Polar GaN  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

225

N7, Olefin Metathesis Reaction on GaN (0001) Surfaces  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

226

ISO TC172/SC1 Optics and Photonics/Fundamental ...  

Science Conference Proceedings (OSTI)

International Organization for Standardization (ISO)/TC 172/SC 1 Optics and Photonics/Fundamental Standards. Purpose: ...

2013-05-18T23:59:59.000Z

227

5 | P a g e SC COMMISSIONER'S SCHOOL FOR AGRICULTURE  

E-Print Network (OSTI)

held in Newberry, SC. Living in the student farm house, Sarah works on the CU Morgan Lee Poultry Center

Bolding, M. Chad

228

Dielectrics for GaN based MIS-diodes  

SciTech Connect

GaN MIS diodes were demonstrated utilizing AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as insulators. A 345 {angstrom} of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) growth, a multi MBE chamber was used and a 195 {angstrom} oxide is E-beam evaporated from a single crystal source of Ga{sub 5}Gd{sub 3}O{sub 12}. The forward breakdown voltage of AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) diodes are 5V and 6V, respectively, which are significantly improved from {approximately} 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.

Ren, F.; Abernathy, C.R.; MacKenzie, J.D. [Univ. of Florida, Gainesville, FL (United States)] [and others

1998-02-01T23:59:59.000Z

229

Reduced-Latency SC Polar Decoder Architectures  

E-Print Network (OSTI)

Polar codes have become one of the most favorable capacity achieving error correction codes (ECC) along with their simple encoding method. However, among the very few prior successive cancellation (SC) polar decoder designs, the required long code length makes the decoding latency high. In this paper, conventional decoding algorithm is transformed with look-ahead techniques. This reduces the decoding latency by 50%. With pipelining and parallel processing schemes, a parallel SC polar decoder is proposed. Sub-structure sharing approach is employed to design the merged processing element (PE). Moreover, inspired by the real FFT architecture, this paper presents a novel input generating circuit (ICG) block that can generate additional input signals for merged PEs on-the-fly. Gate-level analysis has demonstrated that the proposed design shows advantages of 50% decoding latency and twice throughput over the conventional one with similar hardware cost.

Zhang, Chuan; Parhi, Keshab K

2011-01-01T23:59:59.000Z

230

Al-Cr -2007-1 February 1, 2007 Aluminum and Chromium Leaching ...  

Al-Cr -2007-1 February 1, 2007 Aluminum and Chromium Leaching Workshop Atlanta, GA January 23 24, 2007 Crowne Plaza Airport Feedback Questionnaire

231

Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon Sources  

Science Conference Proceedings (OSTI)

The GaAs quantum dots in AlGaAs barriers were grown by droplet epitaxy, emitting around 700 nm in wavelength which is compatible with low cost Si based detectors. The excitation power dependent and time resolved micro-photoluminescence measurements identified optical characteristics of exciton and biexciton states which are attributed to good quantum confinements in GaAs QDs.

Ha, S.-K.; Song, J. D.; Lim, J. Y.; Choi, W. J.; Han, I. K.; Lee, J. I. [Nano Convergence Devices Center, KIST, Seoul 136-791 (Korea, Republic of); Bounouar, S.; Donatini, F.; Dang, L. S.; Poizat, J. P. [CEA/CNRS/UJF team 'Nanophysics and semiconductors', Institute Neel/CNRS-UJF, 38042 Grenoble (France); Kim, J. S. [Department of Physics, Yeungnam University, Gyeongsan 712-749 (Korea, Republic of)

2011-12-23T23:59:59.000Z

232

ALS Spectrum  

NLE Websites -- All DOE Office Websites (Extended Search)

ALS Spectrum Print Begun in 2007, ALS Spectrum is a publication that encapsulates the same type of information contained in the ALS Activity Report but in a short, readable,...

233

Office of Science, SC-3, Qualifying Official Training  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Science, SC-3 Science, SC-3 Qualifying Official (QO) Training Qualifying Official (QO) Training August 2009 August 2009 1 Updated 8/4/09, 1:20pm, CLS Purpose As an SC-3 Qualifying Official (QO) you are Q y g (Q ) y charged with assuring that the technical personnel whom you are evaluating have met and can apply their competencies of their assigned Technical their competencies of their assigned Technical Qualification Program (TQP) qualification standards. 2 Authorization As such each SC-3 Qualifying Official (QO) has As such, each SC-3 Qualifying Official (QO) has received authorization from SC-3 to sign TQP documents or qualification cards for designated i competencies or standards. Office/Facility Specific Standards OFSs y "Site-specific" Functional Area Qualification Standards FAQS "DOE-wide"

234

Using Marginal Lands for Biofuels | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Using Marginal Lands for Biofuels Using Marginal Lands for Biofuels Biological and Environmental Research (BER) BER Home About Research Facilities Science Highlights Searchable Archive of BER Highlights External link Benefits of BER Funding Opportunities Biological & Environmental Research Advisory Committee (BERAC) News & Resources Contact Information Biological and Environmental Research U.S. Department of Energy SC-23/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3251 F: (301) 903-5051 E: sc.ber@science.doe.gov More Information » January 2013 Using Marginal Lands for Biofuels Assessment shows Midwest could support biomass production while benefiting climate. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo Image courtesy of Macmillan Publishers Ltd: Gelfand, I., et al.

235

ALS Spectrum  

NLE Websites -- All DOE Office Websites (Extended Search)

Spectrum Print Begun in 2007, ALS Spectrum is a publication that encapsulates the same type of information contained in the ALS Activity Report but in a short, readable,...

236

Ba-Ga (Barium - Gallium)  

Science Conference Proceedings (OSTI)

Ba-Ga crystallographic data...Ba-Ga crystallographic data Phase Composition, wt% Ga Pearson symbol Space group (Ba) 0 cI 2 Im m Ba 10 Ga 4.8 cF 176 Fd m Ba 8 Ga 7 30.8 cP 60 P 2 1 3 BaGa 2 50.4 hP 3 P 6/ mmm BaGa 4 67 tI 10 I 4/ mmm (Ga) 100 hP 2 P 6 3 / mmc...

237

Biogeochemical Controls | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Contacts Technology Transfer DOE National Laboratories Contact Information Laboratory Policy and Evaluation U.S. Department of Energy SC-32Forrestal Building 1000 Independence...

238

Technology Transfer | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

(LDRD) Technology Transfer DOE National Laboratories Contact Information Laboratory Policy and Evaluation U.S. Department of Energy SC-32Forrestal Building 1000 Independence...

239

'Live Burns' in Spartanburg, SC, Will Benefit Research and ...  

Science Conference Proceedings (OSTI)

... in Spartanburg, SC, battle a 'test burn' of an abandoned house in an ... organizations will turn abandoned wood-frame, single-family houses near ...

2013-02-05T23:59:59.000Z

240

BER Budget | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Scientific and Technical Information Honors & Awards Jobs Contact Us You are here: SC Home Programs BER Home About BER BER Budget Biological and Environmental...

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Index
Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
241

FY 1993 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Scientific and Technical Information Honors & Awards Jobs Contact Us You are here: SC Home About Organization Support Offices Budget Home FY 1993 Budget...

242

FES Budget | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Scientific and Technical Information Honors & Awards Jobs Contact Us You are here: SC Home Programs FES Home About FES FES Budget Fusion Energy Sciences (FES)...

243

FY 2014 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Scientific and Technical Information Honors & Awards Jobs Contact Us You are here: SC Home About Organization Support Offices Budget Home FY 2014 Budget...

244

About Us | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Scientific and Technical Information Honors & Awards Jobs Contact Us You are here: SC Home About Organization Support Offices Budget Home About Us Budget...

245

Safeguards & Security | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Safety & Health Organization Chart .pdf file (82KB) Phone Listing .pdf file (129KB) SC Categorical Exclusions and NEPA Documents SLI & SS Budget Contact Information Safety,...

246

FY 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Scientific and Technical Information Honors & Awards Jobs Contact Us You are here: SC Home About Organization Support Offices Budget Home FY 2007 Budget...

247

HEP Budget | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Scientific and Technical Information Honors & Awards Jobs Contact Us You are here: SC Home Programs HEP Home About HEP HEP Budget High Energy Physics (HEP) HEP...

248

External Links | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Scientific and Technical Information Honors & Awards Jobs Contact Us You are here: SC Home About Organization Support Offices Budget Home External Links...

249

FY 2011 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Scientific and Technical Information Honors & Awards Jobs Contact Us You are here: SC Home About Organization Support Offices Budget Home FY 2011 Budget...

250

Contact Us | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Scientific and Technical Information Honors & Awards Jobs Contact Us You are here: SC Home About Contact Us About Organization Budget Field Offices Federal Advisory...

251

BES Budget | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Scientific and Technical Information Honors & Awards Jobs Contact Us You are here: SC Home Programs BES Home About BES BES Budget Basic Energy Sciences (BES) BES...

252

ASCR Budget | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Scientific and Technical Information Honors & Awards Jobs Contact Us You are here: SC Home Programs ASCR Home About ASCR ASCR Budget Advanced Scientific...

253

FY 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Scientific and Technical Information Honors & Awards Jobs Contact Us You are here: SC Home About Organization Support Offices Budget Home FY 2008 Budget...

254

Fusion Links | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Advisory Committee (FESAC) News & Resources Contact Information Fusion Energy Sciences U.S. Department of Energy SC-24Germantown Building 1000 Independence Ave., SW Washington,...

255

Annual Planning Summaries: Science (SC) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Assessments and Environmental Impact Statements for 2011 and 2012 within Science (SC). Energy.gov Careers & Internships Guidance & Requirements Contact Us About This Site...

256

Quick Links | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Quick Links High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees News & Resources SC Graduate...

257

News & Resources | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301)...

258

Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots  

SciTech Connect

With the help of the photocurrent spectroscopy, the mechanism of emission of charge carriers from energy levels of the (In,Ga)As/(Al,Ga)As quantum dots of different design are studied. Thermal activation is shown to be the main mechanism of carrier emission from the quantum dots for the isolated layer of quantum dots separated by wide (Al,Ga)As spacer layers. At a small width of the (Al,Ga)As spacer layer, when electron binding of separate layers of the quantum dots in the vertical direction takes place, the role of the tunneling mechanism of carrier emission between the vertically coupled quantum dots increases.

Shatalina, E. S., E-mail: Shatalina@mail.ioffe.ru; Blokhin, S. A.; Nadtochy, A. M.; Payusov, A. S.; Savelyev, A. V.; Maximov, M. V.; Zhukov, A. E. [St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation); Ledentsov, N. N. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Kovsh, A. R.; Mikhrin, S. S.; Ustinov, V. M. [Innolume GmbH (Germany)

2010-10-15T23:59:59.000Z

259

Ultra High p-doping Material Research for GaN Based Light Emitters  

Science Conference Proceedings (OSTI)

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

Vladimir Dmitriev

2007-06-30T23:59:59.000Z

260

The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates  

E-Print Network (OSTI)

The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN ...

Zang, Keyan

Index
Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
261

T4, Morphological Development of Homoepitaxial AlN Thin Films ...  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

262

Growth and development of GaInAsP for use in high-efficiency solar cells  

DOE Green Energy (OSTI)

This report describes work done during Phase II of the subcontract. Goals for Phase II include the following: (1) Optimize the GaInAsP cell on GaAs and demonstrate a 500-sun at air mass (AM) 1.5 efficiency of >23%. (2) Develop a window layer, including the evaluation of AlGaAs, GaInP, AlGaAsP, AlGaInP, and GaP. (3) Develop a front-surface contact, with a grid designed for 500-sun concentration, and a goal of a contact resistivity of [approximately]10[sup 5] ohm-cm[sup 2]. (4) Grow GaInAsP cells on Ge, with a goal of a 1-sun (AM 1.5) efficiency of >15%. Accomplishments reported herein include (1) the fabrication of p-on-n and n-on-p GaInAsP cells on GaAs, with the n-on-p cell demonstrating a 10-sun (AM 1.5) active-area efficiency of 23.4% as measured at NREL (2) the evaluation of Al[sub x]Ga([sub 1-x])As, GaInP[sub 2], and AlInP[sub 2] window layers; and (3) the fabrication of GaInAsP cells on Ge, with the demonstration of a p-on-n GaInAsP cell grown on Ge with a 1-sun (AM 1.5) active-area efficiency of 14.4%.

Sharps, P.R. (Research Triangle Inst., Research Triangle Park, NC (United States))

1993-04-01T23:59:59.000Z

263

U.S. Department of Energy Office of Science (SC)  

E-Print Network (OSTI)

Affairs, and Information Management all had increased rating from FY 2002. Environmental Safety& Health implementation of its One SC Restructuring Project. Please extend our congratulations to the LaboratoryU.S. Department of Energy Office of Science (SC) Stanford Site Office (SSO) Stanford Linear

Wechsler, Risa H.

264

Step-Wise Exothermic Reactions in Cold-Rolled Ni/Al, Ti/Al, and Ta ...  

Science Conference Proceedings (OSTI)

Aerosol Route Synthesis of Copper Oxide Nanoparticles Using Copper Nitrate Solution AlGaAs-Based Optical ... Defect Energetics and Fission Product Transport in ZrC ... Enhancing Mineral Beneficiation by High Intensity Power Ultrasound.

265

{sup 45}Sc Solid State NMR studies of the silicides ScTSi (T=Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt)  

SciTech Connect

The silicides ScTSi (T=Fe, Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt) were synthesized by arc-melting and characterized by X-ray powder diffraction. The structures of ScCoSi, ScRuSi, ScPdSi, and ScIrSi were refined from single crystal diffractometer data. These silicides crystallize with the TiNiSi type, space group Pnma. No systematic influences of the {sup 45}Sc isotropic magnetic shift and nuclear electric quadrupolar coupling parameters on various structural distortion parameters calculated from the crystal structure data can be detected. {sup 45}Sc MAS-NMR data suggest systematic trends in the local electronic structure probed by the scandium atoms: both the electric field gradients and the isotropic magnetic shifts relative to a 0.2 M aqueous Sc(NO{sub 3}){sub 3} solution decrease with increasing valence electron concentration and within each T group the isotropic magnetic shift decreases monotonically with increasing atomic number. The {sup 45}Sc nuclear electric quadrupolar coupling constants are generally well reproduced by quantum mechanical electric field gradient calculations using the WIEN2k code. Highlights: Black-Right-Pointing-Pointer Arc-melting synthesis of silicides ScTSi. Black-Right-Pointing-Pointer Single crystal X-ray data of ScCoSi, ScRuSi, ScPdSi, and ScIrSi. Black-Right-Pointing-Pointer {sup 45}Sc solid state NMR of silicides ScTSi.

Harmening, Thomas [Institut fuer Anorganische und Analytische Chemie and NRW Graduate School of Chemistry, Universitaet Muenster, Corrensstrasse 30, D-48149 Muenster (Germany); Eckert, Hellmut, E-mail: eckerth@uni-muenster.de [Institut fuer Physikalische Chemie, Universitaet Muenster, Corrensstrasse 30, D-48149 Muenster (Germany); Fehse, Constanze M. [Institut fuer Physikalische Chemie, Universitaet Muenster, Corrensstrasse 30, D-48149 Muenster (Germany); Sebastian, C. Peter, E-mail: sebastiancp@jncasr.ac.in [New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Poettgen, Rainer, E-mail: pottgen@uni-muenster.de [Institut fuer Anorganische und Analytische Chemie and NRW Graduate School of Chemistry, Universitaet Muenster, Corrensstrasse 30, D-48149 Muenster (Germany)

2011-12-15T23:59:59.000Z

266

Karen Talamini | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Karen Talamini Karen Talamini Deputy Director for Science Programs Deputy Director Home Mission & Functions Deputy Director Biography Organization Staff Presentations & Testimony Federal Advisory Committees Committees of Visitors Contact Information Deputy Director for Science Programs U.S. Department of Energy SC-2/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 F: (202) 586-4120 E: sc.science@science.doe.gov U.S. Department of Energy SC-2/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-5316 F: (301) 903-7780 E: sc.science@science.doe.gov Staff Karen Talamini Print Text Size: A A A RSS Feeds FeedbackShare Page Program Analyst Office of the Deputy Director for Science Programs SC-2/Germantown Building, Room F-242

267

Kevin Shaw | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Kevin Shaw Kevin Shaw Deputy Director for Science Programs Deputy Director Home Mission & Functions Deputy Director Biography Organization Staff Presentations & Testimony Federal Advisory Committees Committees of Visitors Contact Information Deputy Director for Science Programs U.S. Department of Energy SC-2/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 F: (202) 586-4120 E: sc.science@science.doe.gov U.S. Department of Energy SC-2/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-5316 F: (301) 903-7780 E: sc.science@science.doe.gov Staff Kevin Shaw Print Text Size: A A A RSS Feeds FeedbackShare Page Program Analyst Office of the Deputy Director for Science Programs SC-2/Forrestal Building, Room 3H-051 U.S. Department of Energy

268

Jobs | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Jobs Jobs About Organization Budget Field Offices Federal Advisory Committees History Scientific and Technical Information Honors & Awards Jobs Brochures, Logos, & Information Resources Contact Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 Jobs Print Text Size: A A A Subscribe FeedbackShare Page Below is a list of currently open federal employment opportunities* in the Office of Science. Prospective applicants should follow the links to the formal position announcements on USAJOBS.gov External link for more information. SC Science Program Positions SC Field Operations Positions SC Resource Management Positions * Currently open positions: 2 SC Science Programs Positions See below for position listings in the six core SC science program offices.

269

Completed Projects | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Completed Projects Completed Projects Project Assessment (OPA) OPA Home About Project Management SC Projects Review Dates (updated November 2013) Project Construction Photos Completed Projects Current Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov Project Construction Photos Completed Projects Print Text Size: A A A RSS Feeds FeedbackShare Page Photos of completed SC projects Advanced Photon Source External link Building 51 and Bevatron D&D .pdf file (1.1MB) LHC ATLAS .pdf file (322KB) LHC CMS .pdf file (166KB) Linac Coherent Light Source .pdf file (4.6MB)

270

Lauren Smith | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Lauren Smith Lauren Smith Deputy Director for Science Programs Deputy Director Home Mission & Functions Deputy Director Biography Organization Staff Presentations & Testimony Federal Advisory Committees Committees of Visitors Contact Information Deputy Director for Science Programs U.S. Department of Energy SC-2/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 F: (202) 586-4120 E: sc.science@science.doe.gov U.S. Department of Energy SC-2/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-5316 F: (301) 903-7780 E: sc.science@science.doe.gov Staff Lauren Smith Print Text Size: A A A RSS Feeds FeedbackShare Page Program Support Specialist Office of the Deputy Director for Science Programs SC-2/Germantown Building, Room H-208

271

About | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

About About Project Assessment (OPA) OPA Home About Director Staff & Responsibilities Location Project Management SC Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov About Print Text Size: A A A RSS Feeds FeedbackShare Page Click to enlarge photo. Enlarge Photo The Spallation Neutron Source and the Center for Nanophase Material Science at the Oak Ridge National Laboratory. The Office of Project Assessment provides independent advice to the Director of the Office of Science (SC) relating to those activities essential to constructing and operating major research facilities. In

272

Ray Irwin | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ray Irwin Ray Irwin Deputy Director for Science Programs Deputy Director Home Mission & Functions Deputy Director Biography Organization Staff Presentations & Testimony Federal Advisory Committees Committees of Visitors Contact Information Deputy Director for Science Programs U.S. Department of Energy SC-2/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 F: (202) 586-4120 E: sc.science@science.doe.gov U.S. Department of Energy SC-2/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-5316 F: (301) 903-7780 E: sc.science@science.doe.gov Staff Ray Irwin Print Text Size: A A A RSS Feeds FeedbackShare Page Ray Irwin Ray Irwin Administrative Support Specialist Office of the Deputy Director for Science Programs SC-2/Forrestal, Room 7B-078

273

About | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

About About Ames Site Office (AMSO) AMSO Home About Organization Chart .pdf file (113KB) Federal Stewardship Internal Site Office Operations Jobs Current Projects Contract Management Environment, Safety and Health (ES&H) Resources Contact Information Ames Site Office U.S. Department of Energy 9800 S. Cass Avenue Argonne, IL 60439 P: (630) 252-6167 F: (630) 252-2855 About Print Text Size: A A A RSS Feeds FeedbackShare Page AMSO is a SC-line management organization that reports to the Deputy Director for Field Operations for SC (SC-3). Within SC, the SC-Headquarters (HQ) organization establishes policy and direction while the field organizations are responsible for implementing that policy and direction. The Site Offices are responsible and accountable for the management of an

274

Project Management | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Management Management Project Assessment (OPA) OPA Home About Project Management Processes and Procedures Cost & Contingency EDIA Escalation Rates Earned Value Management System (EVMS) Certifications Awards Lessons Learned Tools & Resources SC Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov Project Management Print Text Size: A A A RSS Feeds FeedbackShare Page Contains resources and information that may be useful for Federal Project Directors, HQ Program Managers, senior SC management, or contractor project management personnel. Specific information includes:

275

Ongoing Projects | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Current Projects Current Projects Project Assessment (OPA) OPA Home About Project Management SC Projects Review Dates (updated November 2013) Project Construction Photos Completed Projects Current Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov Project Construction Photos Current Projects Print Text Size: A A A RSS Feeds FeedbackShare Page Photos of current SC Projects 12 GeV CEBAF Upgrade .pdf file (3.2MB) Daya Bay .pdf file (1.0MB) National Spherical Torus Experiment (NSTX) .pdf file (841KB) National Synchrotron Light Source II (NSLS II) .pdf file (6.4MB)

276

Fact Sheets | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Fact Sheets Fact Sheets About Organization Budget Field Offices Federal Advisory Committees History Scientific and Technical Information Honors & Awards Jobs Brochures, Logos, & Information Resources Brochures Fact Sheets SC Logos Newsletters Connect with SC Contact Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 Brochures, Logos, & Information Resources Fact Sheets Print Text Size: A A A RSS Feeds FeedbackShare Page SC Overview Fact Sheet Office of Science (SC) The DOE Office of Science is the Nation's largest supporter of basic research in the physical sciences. Download SC overview fact sheet .pdf file (10.8MB) EFRC Overview Fact Sheet Energy Frontier Research Centers (EFRCs) program The Department of Energy's Office of Science supports 46 Energy Frontier

277

Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.  

SciTech Connect

GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.

Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

2005-12-01T23:59:59.000Z

278

Ga-Zr (Gallium - Zirconium)  

Science Conference Proceedings (OSTI)

Ga-Zr crystallographic data...Ga 5 Zr 3 44.0 oC 32 Cmcm Ga 3 Zr 2 47 oF 40 Fdd 2 βGaZr 56.7 ? ? αGaZr 56.7 tI 16 I 4 1 / amd Ga 4 Zr 5 62.1 hP 18 P 6 3 / mcm Ga 2 Zr 3 66 tP 10 P 4/ mbm Ga 3 Zr 5 68.6 hP 16 P 6 3 / mcm GaZr 2 72.4 tI 12 I 4/ mcm (βZr) ~94 to 100 cI 2 Im m (αZr) 99.4 to 100 hP 2 P 6 3 / mmc...

279

ALS@20  

NLE Websites -- All DOE Office Websites (Extended Search)

feed-image feed-image Digg: ALSBerkeleyLab Facebook Page: 208064938929 Flickr: advancedlightsource Twitter: ALSBerkeleyLab YouTube: AdvancedLightSource Home About the ALS ALS@20 ALS@20 ALS@20 Kick-Off Celebration Print On Friday, January 11, the Advanced Light Source celebrated the beginning of its 20th anniversary year with a brunch attended by more than 150 current and past staff members. After introductory remarks describing the trials and tribulations encountered during the construction of the ALS from former Director Jay Marx, current ALS Scientific Director Steve Kevan and Director Roger Falcone talked about the progress of the facility over the years. Attendees were then able to view more than 500 historical photos of the ALS and its staff displayed around the room.

280

Electroluminescense from InGaN Quantum Dots, in a Monolithically ...  

Science Conference Proceedings (OSTI)

We present an electrically driven structure based on a monolithically GaN/AlInN cavity with a single quantum dot layer grown by MOVPE. The device was grown...

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Index
Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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Index
281

FY 2006 SC Laboratory Performance Report Cards | U.S. DOE Office of Science  

NLE Websites -- All DOE Office Websites (Extended Search)

6 SC Laboratory Performance Report Cards 6 SC Laboratory Performance Report Cards Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

282

Industry @ ALS  

NLE Websites -- All DOE Office Websites (Extended Search)

Industry @ ALS Industry @ ALS Industry @ ALS Concrete Industry Benefits from Ancient Romans and the ALS Print Thursday, 17 October 2013 14:24 New insights into the Romans' ingenious concrete harbor structures emerging from ALS beamline research could move the modern concrete industry toward its goal of a reduced carbon footprint. Summary Slide Read more... Moving Industry Forward: Finding the Environmental Opportunity in Biochar Print Thursday, 12 September 2013 08:41 Using ALS Beamlines 10.3.2 and 8.3.2, the Environmental Protection Agency (EPA) is currently investigating how biochar sorbs environmental toxins and which kinds of biochar are the most effective. The possibilities for widespread use have already launched entrepreneurial commercial ventures. Summary Slide

283

Brochures | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Brochures Brochures About Organization Budget Field Offices Federal Advisory Committees History Scientific and Technical Information Honors & Awards Jobs Brochures, Logos, & Information Resources Brochures Fact Sheets SC Logos Newsletters Connect with SC Contact Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 Brochures, Logos, & Information Resources Brochures Print Text Size: A A A RSS Feeds FeedbackShare Page 2014 Office of Science Brochure Front Cover Back Cover SC Brochure Front Cover SC Brochure Back Cover Download Front Cover Image: Low-res .JPG .jpg file (287KB) | High-res .JPG .jpg file (1.4MB) Download Back Cover Image: Low-res .JPG .jpg file (472KB) | High-res .JPG .jpg file (2.1MB)

284

Staff | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Staff Staff Deputy Director for Science Programs Deputy Director Home Mission & Functions Deputy Director Biography Organization Staff Presentations & Testimony Federal Advisory Committees Committees of Visitors Contact Information Deputy Director for Science Programs U.S. Department of Energy SC-2/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 F: (202) 586-4120 E: sc.science@science.doe.gov U.S. Department of Energy SC-2/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-5316 F: (301) 903-7780 E: sc.science@science.doe.gov Staff Print Text Size: A A A RSS Feeds FeedbackShare Page Deputy Director: Patricia M. Dehmer Deputy Director Administrative Staff: Lauren Smith Program Support Specialist Ray Irwin

285

Lessons Learned | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Lessons Learned Lessons Learned Project Assessment (OPA) OPA Home About Project Management Processes and Procedures Cost & Contingency EDIA Escalation Rates Earned Value Management System (EVMS) Certifications Awards Lessons Learned Tools & Resources SC Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov Project Management Lessons Learned Print Text Size: A A A RSS Feeds FeedbackShare Page NSLS II Magnet Procurement .pdf file (1.3MB) October 2013 OLCF-3 Lessons Learned Report .pdf file (39KB) September 2013 ISB Leasons Learned Report .pdf file (196KB) July 2013

286

Awards | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Management » Management » Awards Project Assessment (OPA) OPA Home About Project Management Processes and Procedures Cost & Contingency EDIA Escalation Rates Earned Value Management System (EVMS) Certifications Awards Lessons Learned Tools & Resources SC Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov Project Management Awards Print Text Size: A A A RSS Feeds FeedbackShare Page 2012 Secretary's Award of Excellence: Building 51 and Bevatron Demolition Project at Lawrence Berkeley National Laboratory The Bevatron Demolition Project successfully accomplished DOE's

287

Award Search | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Award Search Award Search Funding Opportunities Grants & Contracts Support Award Search Find Funding Early Career Research Program Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 Award Search Print Text Size: A A A RSS Feeds FeedbackShare Page DOE Office of Science Award Search Website The award search returns lists of (1) grants, (2) cooperative agreements, and (3) interagency awards currently funded by the DOE Office of Science. An award will appear in the search within the office or division that manages it: Select Organization All Organizations SC-21.1, ASCR Computational Science Research and ... SC-22, Office of Basic Energy Sciences SC-22.1, Chemical Sciences, Geosciences and Biosciences ... SC-22.2, BES Materials Sciences and

288

Escalation Rates | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Escalation Rates Project Assessment (OPA) OPA Home About Project Management Processes and Procedures Cost & Contingency EDIA Escalation Rates Earned Value Management System (EVMS) Certifications Awards Lessons Learned Tools & Resources SC Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov Project Management Escalation Rates Print Text Size: A A A RSS Feeds FeedbackShare Page Cumming Corporation Escalation Study .ppt file (2.8MB) FY 2011 Field Budget Call: Escalation Rates .pdf file (69KB) Industry Specific Escalation, January 2009 .pdf file (56KB)

289

2008 Archive | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Presentations & Testimony » 2008 Archive Presentations & Testimony » 2008 Archive Deputy Director for Science Programs Deputy Director Home Mission & Functions Deputy Director Biography Organization Staff Presentations & Testimony Federal Advisory Committees Committees of Visitors Contact Information Deputy Director for Science Programs U.S. Department of Energy SC-2/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 F: (202) 586-4120 E: sc.science@science.doe.gov U.S. Department of Energy SC-2/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-5316 F: (301) 903-7780 E: sc.science@science.doe.gov Presentations & Testimony 2008 Archive Print Text Size: A A A RSS Feeds FeedbackShare Page 11/19/08 - "Research Opportunities in the DOE Office of Science," .ppt file

290

Director | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Director Director Project Assessment (OPA) OPA Home About Director Staff & Responsibilities Location Project Management SC Projects Other Links SC Federal Project Directors (FPD) and FPD Resources Contact Information Project Assessment U.S. Department of Energy SC-28/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4840 F: (301) 903-8520 E: sc.opa@science.doe.gov About Director Print Text Size: A A A RSS Feeds FeedbackShare Page Click to enlarge photo. Enlarge Photo Daniel R. Lehman Daniel R. Lehman has served as Director of the Office of Project Assessment since June 1991. The majority of Mr. Lehman's over 30 years of Federal Service has been served within the Office of Science (formerly Energy Research). Mr. Lehman's key responsibilities include:

291

About | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

About About Grants & Contracts Support Grants & Contracts Support Home About Organization Chart .pdf file (12KB) Jobs Grants/Contracts Differences Federal Agency Proposals Funding Opportunity Announcements (FOAs) DOE National Laboratory Announcements Grants Process Grants Policy and Guidance FAQs Resources Contract Information Contact Information Grants & Contracts Support U.S. Department of Energy SC-43/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: 301-903-2859 E: sc.grantsandcontracts@science.doe.gov About Print Text Size: A A A RSS Feeds FeedbackShare Page The Office of Grants and Contracts Support (SC-43) primarily supports financial assistance activities as exhibited in the following chart. Grants & Contracts Pie Chart SC-43 works to provide stewardship, guidance, tools and advice needed to

292

Staff | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

About » Staff About » Staff Nuclear Physics (NP) NP Home About Staff Organization Chart .pdf file (32KB) NP Budget NP Committees of Visitors Directions Jobs Labs & Universities Nuclear Physics Related Brochures Research Facilities Science Highlights Benefits of NP Funding Opportunities Nuclear Science Advisory Committee (NSAC) News & Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E: sc.np@science.doe.gov More Information » About Staff Print Text Size: A A A RSS Feeds FeedbackShare Page Contact Info Regular Mail: Express Mail: Office of Nuclear Physics, Office of Nuclear Physics, SC-26 SC-26/Germantown Building U.S. Department of Energy U.S. Department of Energy 19901 Germantown Road

293

Nidc Orgchart | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

F: (301) 903-3833 E: sc.np@science.doe.gov More Information Isotope Development & Production for Research and Applications (IDPRA) Nidc Orgchart Print Text Size: A A A RSS Feeds...

294

Contract Management | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Size: A A A RSS Feeds FeedbackShare Page FY 2012 SC Laboratory Performance Process FY 2013 Annual Performance Plan (APP) .pdf file (1.0MB) FY 2012 Annual Assessment Report...

295

ALS Visitors  

NLE Websites -- All DOE Office Websites (Extended Search)

Energy. March 2010 ALS Project Manager Steve Rossi hosted a group of visitors from Kazakhstan on Friday, March 5. The visitors, including a representative from the Kazakhstan...

296

Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology  

DOE Green Energy (OSTI)

This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

Vernon, S.M. (Spire Corp., Bedford, MA (United States))

1993-04-01T23:59:59.000Z

297

Polarity inversion of N-face GaN using an aluminum oxide interlayer  

Science Conference Proceedings (OSTI)

The polarity of GaN grown by plasma-assisted molecular beam epitaxy was inverted from N-face to Ga-face by inserting a composite AlN/aluminum oxide (AlO{sub x}) interlayer structure at the inversion interface. The change in polarity was verified in situ by reflection high energy electron diffraction via intensity transients and postgrowth surface reconstructions, and ex situ by convergent beam electron diffraction and etch studies in an aqueous potassium hydroxide solution. The inverted materials showed smooth surfaces and good electrical properties. AlGaN/GaN high electron mobility transistors fabricated on the inverted epilayers showed good dc and high frequency performance. A current-gain cutoff frequency (f{sub T}) of 21 GHz and maximum oscillation frequency (f{sub max}) of 61 GHz were measured in devices with a gate length of 0.7 {mu}m. These data compare favorably to those of Ga-face AlGaN/GaN devices with a similar structure grown on Si-face SiC substrates.

Wong, Man Hoi; Mishra, Umesh K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States); Wu, Feng; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2010-12-15T23:59:59.000Z

298

ALS Visitors  

NLE Websites -- All DOE Office Websites (Extended Search)

ALS Visitors ALS Visitors ALS Visitors Print Wednesday, 29 July 2009 00:00 ALS staff members host a variety of scientific, educational, government, and community-related tours each month. November 2013 poneman U.S. Deputy Secretary of Energy Daniel Poneman visited Berkeley Lab on Friday, Nov. 15, during a brief stay in the Bay Area. Glenn Mara of the University of California Office of the President and Aundra Richards of the DOE Berkeley Site Office joined Deputy Laboratory Director Horst Simon's welcome. They updated Poneman on the lab's future initiatives and current capital projects and heard briefings on cyber security, computing, and the Joint BioEnergy Institute. As second-in-command at DOE, Poneman is responsible for assisting the Secretary of Energy in the management and operations of the agency and acting on his behalf when necessary.During his tour of the ALS, Poneman (right) spoke with Ken Goldberg (Materials Sciences Division) at the CXRO beamline.

299

Department of Energy Office of Science Pacific Northwest Site Office Environmental Monitoring Plan for the DOE-SC PNNL Site  

SciTech Connect

The Pacific Northwest Site Office (PNSO) manages the contract for operations at the U.S. Department of Energy Office of Science (DOE-SC) Pacific Northwest National Laboratory (PNNL) Site in Richland, Washington. Radiological operations at the DOE-SC PNNL Site expanded in 2010 with the completion of facilities at the Physical Sciences Facility. As a result of the expanded radiological work at the site, the Washington State Department of Health (WDOH) has required that offsite environmental surveillance be conducted as part of the PNNL Site Radioactive Air Emissions License. The environmental monitoring and surveillance requirements of various orders, regulations, and guidance documents consider emission levels and subsequent risk of negative human and environmental impacts. This Environmental Monitoring Plan (EMP) describes air surveillance activities at the DOE-SC PNNL Site. The determination of offsite environmental surveillance needs evolved out of a Data Quality Objectives process (Barnett et al. 2010) and Implementation Plan (Snyder et al. 2010). The entire EMP is a compilation of several documents, which include the Main Document (this text), Attachment 1: Sampling and Analysis Plan, Attachment 2: Data Management Plan, and Attachment 3: Dose Assessment Guidance.

Snyder, Sandra F.; Meier, Kirsten M.; Barnett, J. M.; Bisping, Lynn E.; Poston, Ted M.; Rhoads, Kathleen

2011-12-21T23:59:59.000Z

300

China National BodyChina National Body ISO/IEC JTC 1/SC 37 BiometricsISO/IEC JTC 1/SC 37 Biometrics  

E-Print Network (OSTI)

1 China National BodyChina National Body ISO/IEC JTC 1/SC 37 BiometricsISO/IEC JTC 1/SC 37 Biometrics London. July 10, 2006London. July 10, 2006 Biometrics in ChinaBiometrics in China ­­ A National Activity ReportA National Activity Report ChinaChina''s Participation in SC37s Participation in SC37 Joined

Li, Stan Z.

Index
Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
301

Growth and development of GaInAsP for use in high-efficiency solar cells. Annual subcontract report, 1 July 1991--30 June 1992  

DOE Green Energy (OSTI)

This report describes work done during Phase II of the subcontract. Goals for Phase II include the following: (1) Optimize the GaInAsP cell on GaAs and demonstrate a 500-sun at air mass (AM) 1.5 efficiency of >23%. (2) Develop a window layer, including the evaluation of AlGaAs, GaInP, AlGaAsP, AlGaInP, and GaP. (3) Develop a front-surface contact, with a grid designed for 500-sun concentration, and a goal of a contact resistivity of {approximately}10{sup 5} ohm-cm{sup 2}. (4) Grow GaInAsP cells on Ge, with a goal of a 1-sun (AM 1.5) efficiency of >15%. Accomplishments reported herein include (1) the fabrication of p-on-n and n-on-p GaInAsP cells on GaAs, with the n-on-p cell demonstrating a 10-sun (AM 1.5) active-area efficiency of 23.4% as measured at NREL (2) the evaluation of Al{sub x}Ga({sub 1-x})As, GaInP{sub 2}, and AlInP{sub 2} window layers; and (3) the fabrication of GaInAsP cells on Ge, with the demonstration of a p-on-n GaInAsP cell grown on Ge with a 1-sun (AM 1.5) active-area efficiency of 14.4%.

Sharps, P.R. [Research Triangle Inst., Research Triangle Park, NC (United States)

1993-04-01T23:59:59.000Z

302

Photoluminescence study of the 1.047 eV emission in GaN K. Pressela)  

E-Print Network (OSTI)

GaN/ AlGaN blue green light emitting diode, which has a much higher quantum efficiency than the SiC blue light emitting diode, became possible.2 Presently the wide bandgap semi- conductor GaN is intensively. Especially the 1.19 eV is very intense. Thus one can think of developing a light emitting diode in the near

Nabben, Reinhard

303

ALS Visitors  

NLE Websites -- All DOE Office Websites (Extended Search)

ALS Visitors Print ALS Visitors Print ALS staff members host a variety of scientific, educational, government, and community-related tours each month. November 2013 poneman U.S. Deputy Secretary of Energy Daniel Poneman visited Berkeley Lab on Friday, Nov. 15, during a brief stay in the Bay Area. Glenn Mara of the University of California Office of the President and Aundra Richards of the DOE Berkeley Site Office joined Deputy Laboratory Director Horst Simon's welcome. They updated Poneman on the lab's future initiatives and current capital projects and heard briefings on cyber security, computing, and the Joint BioEnergy Institute. As second-in-command at DOE, Poneman is responsible for assisting the Secretary of Energy in the management and operations of the agency and acting on his behalf when necessary.During his tour of the ALS, Poneman (right) spoke with Ken Goldberg (Materials Sciences Division) at the CXRO beamline.

304

Al Weinrub  

NLE Websites -- All DOE Office Websites (Extended Search)

Al Weinrub Al Weinrub Author, "COMMUNITY POWER: Decentralized Renewable Energy in California" Member, Sierra Club California Clean Energy-Climate CommitteeMember, Steering Committee, Bay Area Clean Energy Alliance al.weinrub@comcast.net This speaker was a visiting speaker who delivered a talk or talks on the date(s) shown at the links below. This speaker is not otherwise associated with Lawrence Berkeley National Laboratory, unless specifically identified as a Berkeley Lab staff member. Al Weinrub is a member of the Sierra Club California Energy-Climate Committee and serves on the Steering Committee of the Bay Area's Local Clean Energy Alliance. He is the author of COMMUNITY POWER: Decentralized Renewable Energy in California (http://www.localcleanenergy.org/Community-Power-Publication)

305

Al Gallo  

Energy.gov (U.S. Department of Energy (DOE))

As the Director for the Office of Technology Evaluation, Al Gallo works closely with the Chief Technology Officer as well as many Program Offices to advance the introduction and adoption of...

306

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth  

Science Conference Proceedings (OSTI)

Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f{sub t} and f{sub max} in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 OMEGA mum to a GaN 2DEG.

Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K. [Department of ECE, University of California, Santa Barbara, California 93106 (United States) and Department of Materials, University of California, Santa Barbara, California 93106 (United States)

2010-04-05T23:59:59.000Z

307

Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts  

Science Conference Proceedings (OSTI)

The paper is concerned with the theoretical and experimental studies of the band structure and electrical properties of InAlAs/InGaAs/InAlAs/InP heterostructures containing a composite InGaAs quantum well with InAs and GaAs nanoinserts. From the Shubnikov-de Haas effect, the effective cyclotron mass m{sub c}* is determined experimentally and calculated with consideration for the nonparabolicity of the electron energy spectrum. An approach to estimation of the effective mass is proposed and tested. The approach is based on weighted averaging of the m{sub c}* of the composite quantum well's constituent materials. A first proposed heterostructure containing two InAs inserts symmetrically arranged in the quantum well makes a 26% reduction in m{sub c}* compared to m{sub c}* in the lattice-matched In{sub 0.53}Ga{sub 0.47}As quantum well possible.

Ponomarev, D. S., E-mail: ponomarev_dmitr@mail.ru; Vasil'evskii, I. S. [National Nuclear Research University 'Moscow Engineering Physics Institute (MEPhI)' (Russian Federation); Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Khabibullin, R. A. [National Nuclear Research University 'Moscow Engineering Physics Institute (MEPhI)' (Russian Federation); Kulbachinskii, V. A.; Uzeeva, N. A. [Moscow State University (Russian Federation)

2012-04-15T23:59:59.000Z

308

Polarization-engineered GaN/InGaN/GaN tunnel diodes  

E-Print Network (OSTI)

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

2010-08-24T23:59:59.000Z

309

FY 2010 SC Laboratory Performance Report Cards | U.S. DOE Office of Science  

NLE Websites -- All DOE Office Websites (Extended Search)

10 SC Laboratory Performance Report Cards 10 SC Laboratory Performance Report Cards Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards Ames: Oct 1, 2009 - Sept 30, 2010 Argonne: Oct 1, 2009 - Sept 30, 2010 BNL: Oct 1, 2009 - Sept 30, 2010 Fermilab: Oct 1, 2009 - Sept 30, 2010 LBNL: Oct 1, 2009 - Sept 30, 2010 ORNL: Oct 1, 2009 - Sept 30, 2010 PNNL: Oct 1, 2009 - Sept 30, 2010 PPPL: October 1, 2009 - September 30, 2010 SLAC: Oct 1, 2009 - Sept 30, 2010 JLab: Oct 1, 2009 - Sept 30, 2010 FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards

310

JLab: June 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

JLab: June 1, 2005 - Sept 30, 2006 JLab: June 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

311

Fermilab: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Fermilab: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

312

PNNL: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PNNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

313

Ames: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ames: Oct 1, 2005 - Sept 30, 2006 Ames: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

314

LBNL: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

LBNL: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

315

SLAC: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SLAC: Oct 1, 2005 - Sept 30, 2006 SLAC: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

316

BNL: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

BNL: BNL: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

317

FY 2013 SC Laboratory Performance Report Cards | U.S. DOE Office of Science  

NLE Websites -- All DOE Office Websites (Extended Search)

3 SC Laboratory Performance Report Cards 3 SC Laboratory Performance Report Cards Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards

318

FY 2012 SC Laboratory Performance Report Cards | U.S. DOE Office of Science  

NLE Websites -- All DOE Office Websites (Extended Search)

2 SC Laboratory Performance Report Cards 2 SC Laboratory Performance Report Cards Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards

319

ORNL: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

ORNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

320

PPPL: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PPPL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

Index
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Index
321

Argonne: Oct 1, 2005 - Sept 30, 2006 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Argonne: Oct 1, 2005 - Sept 30, 2006 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards FY 2006 SC Laboratory Performance Report Cards Ames: Oct 1, 2005 - Sept 30, 2006 Argonne: Oct 1, 2005 - Sept 30, 2006 BNL: Oct 1, 2005 - Sept 30, 2006 Fermilab: Oct 1, 2005 - Sept 30, 2006 LBNL: Oct 1, 2005 - Sept 30, 2006 ORNL: Oct 1, 2005 - Sept 30, 2006 PNNL: Oct 1, 2005 - Sept 30, 2006 PPPL: Oct 1, 2005 - Sept 30, 2006

322

FY 2011 SC Laboratory Performance Report Cards | U.S. DOE Office of Science  

NLE Websites -- All DOE Office Websites (Extended Search)

1 SC Laboratory Performance Report Cards 1 SC Laboratory Performance Report Cards Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards Ames: Oct 1, 2010 - Sept 30, 2011 Argonne: Oct 1, 2010 - Sept 30, 2011 BNL: Oct 1, 2010 - Sept 30, 2011 Fermilab: Oct 1, 2010 - Sept 30, 2011 LBNL: Oct 1, 2010 - Sept 30, 2011 ORNL: Oct 1, 2010 - Sept 30, 2011 PNNL: Oct 1, 2010 - Sept 30, 2011 PPPL: October 1, 2010 - September 30, 2011 SLAC: Oct 1, 2010 - Sept 30, 2011 JLab: Oct 1, 2010 - Sept 30, 2011 FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards

323

Science Highlights | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Science Highlights Science Highlights Fusion Energy Sciences (FES) FES Home About Research Facilities Science Highlights Benefits of FES Funding Opportunities Fusion Energy Sciences Advisory Committee (FESAC) News & Resources Contact Information Fusion Energy Sciences U.S. Department of Energy SC-24/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4941 F: (301) 903-8584 E: sc.fes@science.doe.gov More Information » Science Highlights Print Text Size: A A A Subscribe FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC) Argonne Leadership Computing Facility (ALCF)

324

Science Highlights | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Highlights Highlights High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » Science Highlights Print Text Size: A A A Subscribe FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC) Argonne Leadership Computing Facility (ALCF) Oak Ridge Leadership Computing Facility (OLCF)

325

2013 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

3 3 Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » Science Highlights 2013 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC)

326

Directions | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Directions Directions Biological and Environmental Research (BER) BER Home About Staff Organization Chart .pdf file (172KB) BER Budget BER Committees of Visitors Directions Jobs Research Facilities Science Highlights Benefits of BER Funding Opportunities Biological & Environmental Research Advisory Committee (BERAC) News & Resources Contact Information Biological and Environmental Research U.S. Department of Energy SC-23/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3251 F: (301) 903-5051 E: sc.ber@science.doe.gov More Information » About Directions Print Text Size: A A A RSS Feeds FeedbackShare Page Directions to Department of Energy, Germantown, Maryland and the Office of Biological and Environmental Research Mailing Address: SC-23/Germantown Building

327

2012 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Science Highlights » 2012 Science Highlights » 2012 Fusion Energy Sciences (FES) FES Home About Research Facilities Science Highlights Benefits of FES Funding Opportunities Fusion Energy Sciences Advisory Committee (FESAC) News & Resources Contact Information Fusion Energy Sciences U.S. Department of Energy SC-24/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4941 F: (301) 903-8584 E: sc.fes@science.doe.gov More Information » Science Highlights 2012 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC) Argonne Leadership Computing Facility (ALCF)

328

2012 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Funding Opportunities Nuclear Science Advisory Committee (NSAC) News & Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E: sc.np@science.doe.gov More Information » Science Highlights 2012 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC) Argonne Leadership Computing Facility (ALCF) Oak Ridge Leadership Computing Facility (OLCF)

329

2012 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Science Highlights » 2012 Science Highlights » 2012 Biological and Environmental Research (BER) BER Home About Research Facilities Science Highlights Searchable Archive of BER Highlights External link Benefits of BER Funding Opportunities Biological & Environmental Research Advisory Committee (BERAC) News & Resources Contact Information Biological and Environmental Research U.S. Department of Energy SC-23/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3251 F: (301) 903-5051 E: sc.ber@science.doe.gov More Information » Science Highlights 2012 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities

330

Human Resources | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Human Human Resources Human Resources and Administration (HRA) HRA Home Leadership Organization Chart .pdf file (27KB) Human Resources Administration SC Correspondence Control Center (SC CCC) Contact Information Human Resources and Administration U.S. Department of Energy SC-48/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-1133 F: (301) 903-1299 Human Resources Print Text Size: A A A RSS Feeds FeedbackShare Page Workforce Planning, Organizational Analysis and Classification: OHRA works with organizations to assess the current workforce, predict the future workforce, identify gaps, and develop new strategies to address those gaps. It provides vital data for management to use when preparing their staffing plans. The staff reviews positions for appropriate

331

2013 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » Science Highlights 2013 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC) Argonne Leadership Computing Facility (ALCF) Oak Ridge Leadership Computing Facility (OLCF)

332

Leadership | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Leadership Leadership Human Resources and Administration (HRA) HRA Home Leadership Organization Chart .pdf file (27KB) Human Resources Administration SC Correspondence Control Center (SC CCC) Contact Information Human Resources and Administration U.S. Department of Energy SC-48/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-1133 F: (301) 903-1299 Leadership Print Text Size: A A A RSS Feeds FeedbackShare Page Director, Human Resources and Administration Division Cyndi Mays Cyndi Mays is a senior level federal manager with experience managing organizations, projects and people. She has a proven track record in Human Resources Operations, Human Capital Strategy along with Human Resource Transformation projects. Her expertise includes recruitment,

333

Staff | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Staff Staff Advanced Scientific Computing Research (ASCR) ASCR Home About Staff Organization Chart .pdf file (85KB) ASCR Budget ASCR Committees of Visitors Directions Jobs Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » About Staff Print Text Size: A A A RSS Feeds FeedbackShare Page How To Contact ASCR By U.S. Mail U.S. Department of Energy SC-21 Germantown Building 1000 Independence Ave., SW Washington, DC 20585-1290 Delivery Address U.S. Department of Energy

334

Administration | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Administration Human Resources and Administration (HRA) HRA Home Leadership Organization Chart .pdf file (27KB) Human Resources Administration SC Correspondence Control Center (SC CCC) Contact Information Human Resources and Administration U.S. Department of Energy SC-48/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-1133 F: (301) 903-1299 Administration Print Text Size: A A A RSS Feeds FeedbackShare Page Performance Management and Awards: OHRA administers and advises on the systematic process by which the Office of Science involves its employees, as individuals and members of a group, in improving organizational effectiveness against the accomplishment of agency mission and goals. This process involves management in planning work

335

Oversight | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Oversight Oversight Deputy Director for Field Operations Deputy Director Home Mission & Functions Deputy Director Biography Organization Oversight Contractor Assurance Systems Who We Are Operations Improvement Committee Contact Information Deputy Director for Field Operations U.S. Department of Energy SC-3/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5434 F: (202) 586-4120 E: sc.science@science.doe.gov Oversight Print Text Size: A A A RSS Feeds FeedbackShare Page SC's field operations must simultaneously drive outstanding mission performance while holding the M&O contractors accountable for results. From an operations perspective, the ten Science laboratories vary significantly in their size and complexity. As a result, our Site Offices

336

2013 | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Science Highlights » 2013 Science Highlights » 2013 Basic Energy Sciences (BES) BES Home About Research Facilities Science Highlights Benefits of BES Funding Opportunities Basic Energy Sciences Advisory Committee (BESAC) News & Resources Contact Information Basic Energy Sciences U.S. Department of Energy SC-22/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3081 F: (301) 903-6594 E: sc.bes@science.doe.gov More Information » Science Highlights 2013 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC) Argonne Leadership Computing Facility (ALCF)

337

2013 | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

3 3 Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Funding Opportunities Nuclear Science Advisory Committee (NSAC) News & Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E: sc.np@science.doe.gov More Information » Science Highlights 2013 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC) Argonne Leadership Computing Facility (ALCF) Oak Ridge Leadership Computing Facility (OLCF)

338

Science Highlights | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Science Highlights Science Highlights Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » Science Highlights Print Text Size: A A A Subscribe FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC)

339

2013 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Biological and Environmental Research (BER) BER Home About Research Facilities Science Highlights Searchable Archive of BER Highlights External link Benefits of BER Funding Opportunities Biological & Environmental Research Advisory Committee (BERAC) News & Resources Contact Information Biological and Environmental Research U.S. Department of Energy SC-23/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3251 F: (301) 903-5051 E: sc.ber@science.doe.gov More Information » Science Highlights 2013 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC)

340

Staff | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Staff Staff Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process Laboratory Planning Process Work for Others in the Office of Science Laboratory Directed Research and Development (LDRD) Technology Transfer DOE National Laboratories Contact Information Laboratory Policy and Evaluation U.S. Department of Energy SC-32/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5447 F: (202) 586-3119 Staff Print Text Size: A A A RSS Feeds FeedbackShare Page Office of Laboratory Policy and Evaluation L. Devon Streit, Associate Director Email: lisa.streit@science.doe.gov Mailing Address: Office of Laboratory Policy and Evaluation, SC-32 U.S. Department of Energy 1000 Independence Avenue, SW Washington, D.C. 20585-1290

Index
Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
341

2012 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

2 2 Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » Science Highlights 2012 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC)

342

2012 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Science Highlights » 2012 Science Highlights » 2012 High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » Science Highlights 2012 Print Text Size: A A A RSS Feeds FeedbackShare Page Filter by Performer Or press Esc Key to close. close Select all that apply. University DOE Laboratory Industry SC User Facilities ASCR User Facilities [+] Options « ASCR User Facilities National Energy Research Scientific Computing Center (NERSC) Argonne Leadership Computing Facility (ALCF) Oak Ridge Leadership Computing Facility (OLCF)

343

China SC Exact Equipment Co LTD | Open Energy Information  

Open Energy Info (EERE)

SC Exact Equipment Co LTD SC Exact Equipment Co LTD Jump to: navigation, search Name China SC Exact Equipment Co., LTD Place Shenzhen, Guangdong Province, China Zip 518125 Sector Solar Product China-based Solar PV cell equipment manufacturer. Coordinates 22.546789°, 114.112556° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":22.546789,"lon":114.112556,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

344

InGaAsN Solar Cells with 1.0eV Bandgap, Lattice Matched to GaAs  

DOE Green Energy (OSTI)

The design, growth by metal-organic chemical vapor deposition, and processing of an In{sub 0.07}Ga{sub 0.93}As{sub 0.98}N{sub 0.02} solar Al, with 1.0 ev bandgap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6-0.8 pm, and solar cell internal quantum efficiencies > 70% arc obwined. Optical studies indicate that defects or impurities, from InGAsN doping and nitrogen incorporation, limit solar cell performance.

Allerman, A.A.; Banas, J.J.; Gee, J.M.; Hammons, B.E.; Jones, E.D.; Kurtz, S.R.

1998-11-24T23:59:59.000Z

345

Newsletters | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Newsletters Newsletters About Organization Budget Field Offices Federal Advisory Committees History Scientific and Technical Information Honors & Awards Jobs Brochures, Logos, & Information Resources Brochures Fact Sheets SC Logos Newsletters Connect with SC Contact Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 Brochures, Logos, & Information Resources Newsletters Print Text Size: A A A RSS Feeds FeedbackShare Page Laboratory Newsletters Ames Laboratory Inquiry External link | Archive External link Brookhaven National Laboratory The Bulletin External link | Archive External link Fermi National Accelerator Laboratory Fermilab Today External link | Archive External link Lawrence Berkeley National Laboratory

346

aa | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Advanced Scientific Computing Research (ASCR) ASCR Home About Research Applied Mathematics Computer Science Exascale Tools Workshop Programming Challenges Workshop Architectures I Workshop External link Architectures II Workshop External link Next Generation Networking Scientific Discovery through Advanced Computing (SciDAC) Computational Science Graduate Fellowship (CSGF) ASCR SBIR-STTR Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information »

347

SDM | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SDM SDM Advanced Scientific Computing Research (ASCR) ASCR Home About Research Applied Mathematics Computer Science Exascale Tools Workshop Programming Challenges Workshop Architectures I Workshop External link Architectures II Workshop External link Next Generation Networking Scientific Discovery through Advanced Computing (SciDAC) Computational Science Graduate Fellowship (CSGF) ASCR SBIR-STTR Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information »

348

Challenges | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Challenges Challenges Advanced Scientific Computing Research (ASCR) ASCR Home About Research Applied Mathematics Computer Science Exascale Tools Workshop Programming Challenges Workshop Architectures I Workshop External link Architectures II Workshop External link Next Generation Networking Scientific Discovery through Advanced Computing (SciDAC) Computational Science Graduate Fellowship (CSGF) ASCR SBIR-STTR Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information »

349

ALS Visitors  

NLE Websites -- All DOE Office Websites (Extended Search)

Quick Facts Quick Facts ALS Visitors Print ALS staff members host a variety of scientific, educational, government, and community-related tours each month. November 2013 poneman U.S. Deputy Secretary of Energy Daniel Poneman visited Berkeley Lab on Friday, Nov. 15, during a brief stay in the Bay Area. Glenn Mara of the University of California Office of the President and Aundra Richards of the DOE Berkeley Site Office joined Deputy Laboratory Director Horst Simon's welcome. They updated Poneman on the lab's future initiatives and current capital projects and heard briefings on cyber security, computing, and the Joint BioEnergy Institute. As second-in-command at DOE, Poneman is responsible for assisting the Secretary of Energy in the management and operations of the agency and acting on his behalf when necessary.During his tour of the ALS, Poneman (right) spoke with Ken Goldberg (Materials Sciences Division) at the CXRO beamline.

350

Lithium Segregation at Matrix/Precipitate Interfaces in Al-Li-Sc and ...  

Science Conference Proceedings (OSTI)

Characterization of Reaction Layers in Mn1.5Co1.5O4 Coated Fuel Cell ... a Possible Radiation Damage Healing Mechanism under Fusion Reactor Conditions.

351

Nanoscale Precipitation-Strengthened Al-Sc-(V,Nb,Ta) Alloys  

Science Conference Proceedings (OSTI)

N11: Microbilogically Influenced Corrosion of Pipeline Steels used in Oil & Gas Industry ... N2: Fabrication of Uranium Dispersion Targets for Mo-99 Production ... Numerical Modelling for Characterising the Flammability of Natural Fibre...

352

Creating Supersaturated Al-Sc-Zr Coatings with Additive Friction Stir ...  

Science Conference Proceedings (OSTI)

Proceedings Inclusion? Definite: A CD-only volume ... Additive Manufacturing of Materials Key Thrust Area of ORNL's Manufacturing Demonstration Facility.

353

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

354

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

355

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name GA-SNC Solar Place Nevada Sector Solar Product Nevada-based PV project developer and joint venture of GA-Solar North America and...

356

Poster Presentations | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

(Smedley-Alkali) .pdf file (455KB) GaAs Detectors (Durbin) .pdf file (2.0MB) Detector R&D @ LBNL (Denes) .pdf file (2.5MB) Advanced Beam Physics @ UCLA (Musumeci) .pdf file...

357

U.S. CMS S&C PMG  

NLE Websites -- All DOE Office Websites (Extended Search)

has chosen CDF has chosen dCache dCache as their base-line storage solution as their base-line storage solution 6 Sep 13, 2002 U.S. CMS S&C PMG 11 Lothar A T Bauerdick Fermilab...

358

Economics Engineering (B.Sc.) Summer Term 2013  

E-Print Network (OSTI)

Economics Engineering (B.Sc.) Summer Term 2013 Short version Date: 06.03.2013 Department of Economics and Business Engineering KIT - University of the State of Baden-Wuerttemberg and National Research Engineering Karlsruhe Institute of Technology (KIT) 76128 Karlsruhe www.wiwi.kit.edu Contact: modul

Stein, Oliver

359

Economics Engineering (M.Sc.) Summer Term 2013  

E-Print Network (OSTI)

Economics Engineering (M.Sc.) Summer Term 2013 Short version Date: 05.03.2013 Faculty of Economics and Business Engineering KIT - University of the State of Baden-Wuerttemberg and National Research Center of the Helmholtz Association www.kit.edu #12;Publisher: Department of Economics and Business Engineering Karlsruhe

Stein, Oliver

360

Business Engineering (B.Sc.) Summer Term 2013  

E-Print Network (OSTI)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189 Internal Combustion Engines and Exhaust Gas Aftertreatment Technology- 2134138Business Engineering (B.Sc.) Summer Term 2013 Long version Date: 05.03.2013 Faculty of Economics and Business Engineering KIT - University of the State of Baden-Wuerttemberg and National Research Center

Stein, Oliver

Index
Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
361

Economics Engineering (M.Sc.) Summer Term 2013  

E-Print Network (OSTI)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 253 Internal Combustion Engines and Exhaust Gas Aftertreatment Technology- 2134138Economics Engineering (M.Sc.) Summer Term 2013 Long version Date: 05.03.2013 Faculty of Economics and Business Engineering KIT - University of the State of Baden-Wuerttemberg and National Research Center

Stein, Oliver

362

Business Engineering (B.Sc.) Summer Term 2013  

E-Print Network (OSTI)

Business Engineering (B.Sc.) Summer Term 2013 Short version Date: 05.03.2013 Faculty of Economics and Business Engineering KIT - University of the State of Baden-Wuerttemberg and National Research Center of the Helmholtz Association www.kit.edu #12;Publisher: Department of Economics and Business Engineering Karlsruhe

Stein, Oliver

363

Economics Engineering (B.Sc.) Summer Term 2013  

E-Print Network (OSTI)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179 Internal Combustion Engines and Exhaust Gas Aftertreatment Technology- 2134138Economics Engineering (B.Sc.) Summer Term 2013 Long version Date: 06.03.2013 Department of Economics and Business Engineering KIT - University of the State of Baden-Wuerttemberg and National Research

Stein, Oliver

364

Harvard Medical ScHool Minority Faculty Development Program  

E-Print Network (OSTI)

Harvard Medical ScHool Minority Faculty Development Program training directory 2009-2010 #12 and medical school graduation, you face important decisions regarding internships, post-graduate education and future fellowship training. Harvard Medical School and its affiliated hospitals and research institutions

Church, George M.

365

SC-RISE LECTURE SERIES BRIGHT HORIZONS IN SOLAR ENERGY  

E-Print Network (OSTI)

SC-RISE LECTURE SERIES BRIGHT HORIZONS IN SOLAR ENERGY Sustainable Energy Opportunities, Options are being developed including biomass, geothermal, hydropower, ocean thermal energy conversion, solar electric, solar thermal, and wind. However, such aspects as low energy density, siting, and temporal

366

DOE/SC-0060 U. S. Department of Energy  

E-Print Network (OSTI)

. The risk of conflicts arising from energy shortages and supply cutoffs, as well as the risk of severeDOE/SC-0060 U. S. Department of Energy Office of Science September, 2002 Fusion Energy Sciences Advisory Committee A BURNING PLASMA PROGRAM STRATEGY TO ADVANCE FUSION ENERGY #12;1 Report of the FESAC

367

T-527: OpenSC Smart Card Serial Number Multiple Buffer Overflow  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7: OpenSC Smart Card Serial Number Multiple Buffer Overflow 7: OpenSC Smart Card Serial Number Multiple Buffer Overflow Vulnerabilities T-527: OpenSC Smart Card Serial Number Multiple Buffer Overflow Vulnerabilities January 4, 2011 - 5:52pm Addthis PROBLEM: OpenSC Smart Card Serial Number Multiple Buffer Overflow Vulnerabilities PLATFORM: Vulnerable Platform: OpenSC 0.11.13 ABSTRACT: OpenSC is prone to multiple buffer-overflow vulnerabilities because the application fails to perform adequate boundary checks on user-supplied input. Attackers may leverage these issues to execute arbitrary code in the context of the application. Failed attacks will cause denial-of-service conditions. reference LINKS: SecurityFocus - OpenSC Smart Card Serial CVE-2010-4523 OpenSC: Three stack-based buffer overflows CVE-2010-4523 - Three stack-based buffer overflows

368

Fermilab: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Fermilab: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

369

LBNL: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

LBNL: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

370

BNL: Oct 1, 2006 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

BNL: BNL: Oct 1, 2006 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

371

PPPL: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PPPL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

372

LBNL: Oct 1, 2006 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

LBNL: Oct 1, 2006 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

373

SLAC: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SLAC: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

374

PNNL: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PNNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

375

ORNL: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

ORNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

376

PNNL: Oct 1, 2006 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PNNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

377

LBNL: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

LBNL: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

378

SLAC: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SLAC: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

379

LBNL: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

LBNL: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

380

Ames: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ames: Oct 1, 2012 - Sept 30, 2013 Ames: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

Index
Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
381

BNL: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

BNL: BNL: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

382

BNL: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

BNL: BNL: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

383

PPPL: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PPPL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

384

Argonne: Oct 1, 2006 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Argonne: Oct 1, 2006 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

385

Ames: Jan 1, 2007 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ames: Jan 1, 2007 - Sept 30, 2007 Ames: Jan 1, 2007 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

386

SLAC: Oct 1, 2006 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SLAC: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

387

ORNL: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

ORNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

388

PNNL: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PNNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

389

Fermilab: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Fermilab: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

390

JLab: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

JLab: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

391

Ames: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ames: Oct 1, 2007 - Sept 30, 2008 Ames: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

392

Argonne: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Argonne: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

393

Fermilab: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Fermilab: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

394

Ames: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ames: Oct 1, 2008 - Sept 30, 2009 Ames: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

395

PNNL: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PNNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

396

Fermilab: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Fermilab: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

397

JLab: Oct 1, 2006 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

JLab: Oct 1, 2006 - Sept 30, 2007 JLab: Oct 1, 2006 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

398

BNL: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

BNL: BNL: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

399

BNL: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

BNL: BNL: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

400

Argonne: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Argonne: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

Index
Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
401

PPPL: Apr 1, 2009 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PPPL: Apr 1, 2009 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

402

SLAC: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SLAC: Oct 1, 2008 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

403

Argonne: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Argonne: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

404

SLAC: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

SLAC: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

405

Fermilab: Jan 1, 2007 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Fermilab: Jan 1, 2007 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

406

Ames: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ames: Oct 1, 2011 - Sept 30, 2012 Ames: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

407

ORNL: Oct 1, 2006 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

ORNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

408

ORNL: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

ORNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

409

PNNL: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PNNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

410

Argonne: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Argonne: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

411

JLab: Oct 1, 2008 - Sept 30, 2009 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

JLab: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards Ames: Oct 1, 2008 - Sept 30, 2009 Argonne: Oct 1, 2008 - Sept 30, 2009 BNL: Oct 1, 2008 - Sept 30, 2009 Fermilab: Oct 1, 2008 - Sept 30, 2009 LBNL: Oct 1, 2008 - Sept 30, 2009 ORNL: Oct 1, 2008 - Sept 30, 2009 PNNL: Oct 1, 2008 - Sept 30, 2009 PPPL: Apr 1, 2009 - Sept 30, 2009 SLAC: Oct 1, 2008 - Sept 30, 2009 JLab: Oct 1, 2008 - Sept 30, 2009 FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

412

JLab: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

JLab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

413

PPPL: Oct 1, 2011 - Sept 30, 2012| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PPPL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards Ames: Oct 1, 2011 - Sept 30, 2012 Argonne: Oct 1, 2011 - Sept 30, 2012 BNL: Oct 1, 2011 - Sept 30, 2012 Fermilab: Oct 1, 2011 - Sept 30, 2012 LBNL: Oct 1, 2011 - Sept 30, 2012 ORNL: Oct 1, 2011 - Sept 30, 2012 PNNL: Oct 1, 2011 - Sept 30, 2012 PPPL: Oct 1, 2011 - Sept 30, 2012 SLAC: Oct 1, 2011 - Sept 30, 2012 JLab: Oct 1, 2011 - Sept 30, 2012 FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

414

ORNL: Oct 1, 2007 - Sept 30, 2008 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

ORNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards Ames: Oct 1, 2007 - Sept 30, 2008 Argonne: Oct 1, 2007 - Sept 30, 2008 BNL: Oct 1, 2007 - Sept 30, 2008 Fermilab: Oct 1, 2007 - Sept 30, 2008 JLab: Oct 1, 2007 - Sept 30, 2008 LBNL: Oct 1, 2007 - Sept 30, 2008 ORNL: Oct 1, 2007 - Sept 30, 2008 PNNL: Oct 1, 2007 - Sept 30, 2008 PPPL: Oct 1, 2007 - Sept 30, 2008 SLAC: Oct 1, 2007 - Sept 30, 2008 FY 2007 SC Laboratory Performance Report Cards

415

PPPL: Oct 1, 2006 - Sept 30, 2007 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

PPPL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards Ames: Jan 1, 2007 - Sept 30, 2007 Argonne: Oct 1, 2006 - Sept 30, 2007 BNL: Oct 1, 2006 - Sept 30, 2007 Fermilab: Jan 1, 2007 - Sept 30, 2007 LBNL: Oct 1, 2006 - Sept 30, 2007 ORNL: Oct 1, 2006 - Sept 30, 2007 PNNL: Oct 1, 2006 - Sept 30, 2007 PPPL: Oct 1, 2006 - Sept 30, 2007 SLAC: Oct 1, 2006 - Sept 30, 2007

416

LBNL: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

LBNL: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

417

JLab: Oct 1, 2012 - Sept 30, 2013| U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

JLab: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process FY 2013 SC Laboratory Performance Report Cards Ames: Oct 1, 2012 - Sept 30, 2013 Argonne: Oct 1, 2012 - Sept 30, 2013 BNL: Oct 1, 2012 - Sept 30, 2013 Fermilab: Oct 1, 2012 - Sept 30, 2013 LBNL: Oct 1, 2012 - Sept 30, 2013 ORNL: Oct 1, 2012 - Sept 30, 2013 PNNL: Oct 1, 2012 - Sept 30, 2013 PPPL: Oct 1, 2012 - Sept 30, 2013 SLAC: Oct 1, 2012 - Sept 30, 2013 JLab: Oct 1, 2012 - Sept 30, 2013 FY 2012 SC Laboratory Performance Report Cards FY 2011 SC Laboratory Performance Report Cards FY 2010 SC Laboratory Performance Report Cards FY 2009 SC Laboratory Performance Report Cards FY 2008 SC Laboratory Performance Report Cards FY 2007 SC Laboratory Performance Report Cards

418

Mary Jo Martin | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Programs U.S. Department of Energy SC-2Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 F: (202) 586-4120 E: sc.science@science.doe.gov...

419

MCS Division researchers play major role in SC13 | Argonne National...  

NLE Websites -- All DOE Office Websites (Extended Search)

in SC13 August 28, 2013 Tweet EmailPrint The International Conference for High Performance Computing, Networking, Storage and Analytics-better known simply as SC-has long been...

420

EA-387 Energia Renovable S.C., LLC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7 Energia Renovable S.C., LLC EA-387 Energia Renovable S.C., LLC Order authorizing Energia Renovable to export electric energy to Mexico. EA-387 Energia Renovable (MX).pdf More...

Index
Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
421

Microsoft PowerPoint - 09 Lehman final 1003 SC PM Workshop |...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

- 09 Lehman final 1003 SC PM Workshop Microsoft PowerPoint - 09 Lehman final 1003 SC PM Workshop More Documents & Publications Microsoft PowerPoint - 16.1045Peer Reviews...

422

Fabrication of the Mg/Al clad sheet and its mechanical properties  

Science Conference Proceedings (OSTI)

Aerosol Route Synthesis of Copper Oxide Nanoparticles Using Copper Nitrate Solution AlGaAs-Based Optical ... Defect Energetics and Fission Product Transport in ZrC ... Enhancing Mineral Beneficiation by High Intensity Power Ultrasound.

423

Impact toughness Enhancement of an Electron Beam Welded Ti-6Al ...  

Science Conference Proceedings (OSTI)

Aerosol Route Synthesis of Copper Oxide Nanoparticles Using Copper Nitrate Solution AlGaAs-Based Optical ... Defect Energetics and Fission Product Transport in ZrC ... Enhancing Mineral Beneficiation by High Intensity Power Ultrasound.

424

Pressurless sintering of Al2O3-SiC nano composites and effect of ...  

Science Conference Proceedings (OSTI)

Aerosol Route Synthesis of Copper Oxide Nanoparticles Using Copper Nitrate Solution AlGaAs-Based Optical ... Defect Energetics and Fission Product Transport in ZrC ... Enhancing Mineral Beneficiation by High Intensity Power Ultrasound.

425

Impacts of impurities on the Properties of Secondary Al-Si-Cu alloys  

Science Conference Proceedings (OSTI)

Aerosol Route Synthesis of Copper Oxide Nanoparticles Using Copper Nitrate Solution AlGaAs-Based Optical ... Defect Energetics and Fission Product Transport in ZrC ... Enhancing Mineral Beneficiation by High Intensity Power Ultrasound.

426

AL. I  

Office of Legacy Management (LM)

AL. I AL. I Department of Energy Washington, DC 20545 OCT 13 Vii87 Mr. John T. Shields A214 National Fertilizer Development Center Tennessee Valley Authority Muscle Shoals, Alabama 35660 Dear Mr. Shields: As you may know, the Department of Energy (DOE) is evaluating the radiological condition of sites that were utilized under the Manhattan Engineer District and the Atomic Energy Commission (AEC) during the early years of nuclear development to determine whether they need remedial action and whether the Department has authority to perform such action. AEC work at the TVA during the period 1951 through 1955 involved the development of a process to recover uranium from the production of phosphate fertilizer. A laboratory and pilot plant were operated at the site, but very little

427

Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1-xN thin films  

Science Conference Proceedings (OSTI)

Piezoelectric wurtzite ScxAl1 xN (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al2O3(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 C, the crystal structure is poor and leakage current is high. Transmission electron microscopy with energy dispersive x-ray spectroscopy mapping shows a mass separation into ScN-rich and AlN-rich domains for x 0.2 when substrate temperature is increased from 400 to 800 C. The piezoelectric response of epitaxial ScxAl1 xN films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.

Zukauskaite, Agne [Linkoping University; Wingqvist, Gunilla [Linkoping University; Palisaitis, Justinas [Linkoping University; Jensen, Jens [Linkoping University; Persson, Per [Linkoping University; Matloub, Ramin [Ecole Polytechnique Federale de Lausanne, Switzerland; Muralt, Paul [Ecole Polytechnique Federale de Lausanne, Switzerland; Kim, Yunseok [ORNL; Birch, Jens [Linkoping University; Hultman, Lars [Linkoping University

2012-01-01T23:59:59.000Z

428

College/University: 1999 B.Sc. University of Indonesia, Indonesia  

E-Print Network (OSTI)

Education College/University: 1999 B.Sc. University of Indonesia, Indonesia 2003 M.Sc. University of Indonesia, Indonesia Highest degree: M.Sc. in Microbiology Medicine Major Subjects: Cell Biology, Embryonic name: Andri Last name: Pramono Date of birth: 21.08.1976 Country: Indonesia E-mail: pramesyanti @yahoo

Manstein, Dietmar J.

429

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

A. Vawter, and J. R. Wendt, High-aspect-ratio nanophotonicJ. D. Joannopoulos, J. R. Wendt, G. A. Vawter, W. Zubrzycki,A. Vawter, and J. R. Wendt, High-aspect-ratio nanophotonic

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

430

Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures  

E-Print Network (OSTI)

of California at San Diego, La Jolla, California 92093-0407 K. S. Boutros and J. M. Redwing Epitronics

Yu, Edward T.

431

Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor  

E-Print Network (OSTI)

Center, Thousand Oaks, California 91358 K. S. Boutros and J. M. Redwing Epitronics/ATMI, Phoenix, Arizona

Yu, Edward T.

432

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

Optics : Electromagnetic Theory of Propagation, InterferenceOptics : Electromagnetic Theory of Propagation, Interference

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

433

NIVEAUX PROFONDS DANS LES DIODES LECTROLUMINESCENTES GaAs-GaAlAs  

E-Print Network (OSTI)

JEPPSON, B., Jpn. J. Appl. Phys. 12 (1973) 1011. [15] LANG, D. V., CHO, A. Y., GOSSARD, A. C. et WIEGMANN

Paris-Sud XI, Université de

434

KK9, Nanostructure Decorated AlGaN/GaN HEMTs for Chemical ...  

Science Conference Proceedings (OSTI)

The high sensitivity of ZnO, towards the exposure to NH3, H2, O3, CO, NO2, and ethanol etc., makes it viable for gas sensing applications. Similarly, the same...

435

JJ5, Electro-Thermo-Mechanical Simulation of AlGaN/GaN HFETs ...  

Science Conference Proceedings (OSTI)

Recently, gate insulation has shown to significantly reduce the leakage .... E6, Development of Surface Activation Based Nano-Bonding and Interconnect System ... Microstructure and Properties of Colloidal ITO Films and Cold- Sputtered ITO...

436

Characteristics of AlGaAs/GaAs heterostructure RT-SCR model  

Science Conference Proceedings (OSTI)

Electrical properties of a resonant-tunneling-semiconductor-controlled rectifier (RT-SCR) model have been presented. The current, temperature, gain, doping concentration, and layer size versus voltage relationships have been numerically obtained. The ... Keywords: RT-SCR, Semiconductor devices, Thyristors

B. D. Barkana

2008-12-01T23:59:59.000Z

437

Life tests of Nichia AlGaN/InGaN/GaN blue-light-emitting diodes  

SciTech Connect

We report on results of life testing Nichia NLPB500 blue LEDs in a temperature controlled chamber, with computer automation of equipment operation and data collection. The tests began with 18 newer (Nichia batch 4B0001) and two older (Nichia batch S403024, acquired a year earlier) LEDs, operated at 20 mA continuous wave (CW) and 23{degree}C. Light from each LED was coupled to an optical fiber and fed directly to individual photodetectors. General trend for the 18 newer LEDs was for the output intensity to increase at a faster rate within the first 50 h and then at a slower rate of the remainder of the first test. The output intensity of the two older LEDs increase within the first 50 h then decreased during the remainder of the first 1000 h. All 20 of the LEDs in the first 1000-h test were subjected to a second 1650-h test at 23{degree}C and at currents 20-70 mA CW. Only one LED, an older device, suffered a soft failure during this second test. The remaining LEDs underwent a third test at 30{degree}C and a fourth test at 35{degree}C, all at various currents. We will perform failure analysis.

Helms, C.J.; Berg, N.H.; Barton, D.L.; Osinski, M

1996-03-01T23:59:59.000Z

438

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes  

SciTech Connect

Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1-3 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes.

Sizov, V. S., E-mail: vsizov@mail.ioffe.ru; Tsatsulnikov, A. F.; Sakharov, A. V.; Lundin, W. V.; Zavarin, E. E.; Cherkashin, N. A. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Hytch, M. J. [National Center for Scientific Research (CNRS), Center for Material Elaboration and Structural Studies (CEMES) (France); Nikolaev, A. E. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Mintairov, A. M.; He Yan; Merz, J. L. [University of Notre Dame, EE Department (United States)

2010-07-15T23:59:59.000Z

439

2010 Annual Workforce Analysis and Staffing Plan Report - SC HQ  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Off ice of Science Off ice of Science Washington, DC 20585 December 15, 2010 MEMORANDUM TO KAREN L. BOARDMAN CHAIRPERSON FROM: SUBJECT: FEDERAL TECHNICAL CAP ABILITY PANEL Annual Workforce Analysis and Staffing Plan Report for Calendar Year 20 l 0 In response to your memo dated October 28, 2010, enclosed is the Office of Science (SC) Headquarters Workforce Analysis and Staffing Plan Report for Calendar Year 2010. The subject report was prepared in accordance with your guidance and represents the necessary resources required to provide oversight of Building 325 at Pacific Northwest National Laboratory, the only defense nuclear facility overseen by SC-Headquarters. If you have any questions regarding this memorandum, please contact Carol Sohn at carol.sohn@pnso.science.doe.gov or (509) 375-2320.

440

Fusion Education | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Benefits of FES » Fusion Benefits of FES » Fusion Education Fusion Energy Sciences (FES) FES Home About Research Facilities Science Highlights Benefits of FES Fusion Education Funding Opportunities Fusion Energy Sciences Advisory Committee (FESAC) News & Resources Contact Information Fusion Energy Sciences U.S. Department of Energy SC-24/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4941 F: (301) 903-8584 E: sc.fes@science.doe.gov More Information » Benefits of FES Fusion Education Print Text Size: A A A RSS Feeds FeedbackShare Page The Fusion Energy Sciences Program includes a diverse set of disciplines - from modern plasma physics theories dealing with chaotic systems of energetic particles and waves to more conventional engineering problems of applied electromagnetism. Throughout the scientific programs supported by

Index
Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
441

Facility Ops | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Facility Ops Facility Ops High Energy Physics (HEP) HEP Home About Research Facilities Facility Ops Experiments at the Energy Frontier Experiments at the Intensity Frontier Experiments at the Cosmic Frontier Projects, Missions, and Status HEP User Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » Facilities Facility Ops Print Text Size: A A A RSS Feeds FeedbackShare Page The Facility Operations division supports major operations at the Fermilab Tevatron Complex, U.S. LHC Operations, and operations at other labs as

442

Advisory Committees | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Advisory Committees Advisory Committees High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees HEPAP AAAC External link NAS External link News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » Advisory Committees Print Text Size: A A A RSS Feeds FeedbackShare Page High Energy Physics Advisory Panel (HEPAP) Jointly chartered since October 2000 by the Department of Energy (DOE) and the National Science Foundation (NSF), HEPAP reports both to DOE's Office of High Energy Physics and the NSF's Mathematical & Physical Sciences

443

BER Timeline | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

News & Resources » BER News & Resources » BER Timeline Biological and Environmental Research (BER) BER Home About Research Facilities Science Highlights Benefits of BER Funding Opportunities Biological & Environmental Research Advisory Committee (BERAC) News & Resources BER Timeline Contact Information Biological and Environmental Research U.S. Department of Energy SC-23/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3251 F: (301) 903-5051 E: sc.ber@science.doe.gov More Information » News & Resources BER Timeline Print Text Size: A A A RSS Feeds FeedbackShare Page All Biological Systems Science Events Climate and Environmental Sciences Events Jump to ... 2010 2005 2000 1995 1995 1990 1985 1980 1975 1970 1965 1960 1955 1950 1945 1940 1935 1930 Text version Visual timeline version

444

Reviews | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Reviews Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Funding Opportunities Closed Funding Opportunity Announcements (FOAs) Closed Lab Announcements Award Search Reviews NP Early Career Opportunities & Awardees Nuclear Science Advisory Committee (NSAC) News & Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E: sc.np@science.doe.gov More Information » Funding Opportunities Reviews Print Text Size: A A A RSS Feeds FeedbackShare Page To ensure that funding is allocated as efficiently as possible, the NP program has developed a system of planning and priority setting that relies heavily on input from groups of outside experts. NP has also instituted a

445

Funding Opportunities | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Funding Opportunities Funding Opportunities Basic Energy Sciences (BES) BES Home About Research Facilities Science Highlights Benefits of BES Funding Opportunities Closed Funding Opportunity Announcements (FOAs) Closed Lab Announcements Award Search Peer Review Policies EFRCs FOA Applications from Universities and Other Research Institutions Construction Review EPSCoR DOE Office of Science Graduate Fellowship (DOE SCGF) External link Early Career Research Program Basic Energy Sciences Advisory Committee (BESAC) News & Resources Contact Information Basic Energy Sciences U.S. Department of Energy SC-22/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3081 F: (301) 903-6594 E: sc.bes@science.doe.gov More Information » Funding Opportunities Print Text Size: A A A

446

Workshop Reports | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Workshop Reports Workshop Reports High Energy Physics (HEP) HEP Home About Research Snowmass / P5 Planning Process Intensity Frontier Cosmic Frontier Theoretical Physics Advanced Technology R&D Accelerator R&D Stewardship Mission Background HEP Accelerator R&D Expertise Connecting Accelerator R&D to User Needs Workshop Reports Research Highlights .pdf file (13.1MB) Questions for the Universe Accomplishments Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » Accelerator R&D Stewardship Workshop Reports

447

Funding Opportunities | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Funding Opportunities Funding Opportunities High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Closed Funding Opportunity Announcements (FOAs) Closed Lab Announcements Award Search Peer Merit / Review Policies Early Career Research Opportunities in High Energy Physics Graduate Fellows in High Energy Theory Guidelines Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » Funding Opportunities Print Text Size: A A A Subscribe FeedbackShare Page The Following is a list of funding opportunities in the Office of High Energy Physics (HEP). Not all Funding Opportunity Announcements (FOA) are

448

Award Search | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Award Search Award Search Basic Energy Sciences (BES) BES Home About Research Facilities Science Highlights Benefits of BES Funding Opportunities Closed Funding Opportunity Announcements (FOAs) Closed Lab Announcements Award Search Peer Review Policies EFRCs FOA Applications from Universities and Other Research Institutions Construction Review EPSCoR DOE Office of Science Graduate Fellowship (DOE SCGF) External link Early Career Research Program Basic Energy Sciences Advisory Committee (BESAC) News & Resources Contact Information Basic Energy Sciences U.S. Department of Energy SC-22/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3081 F: (301) 903-6594 E: sc.bes@science.doe.gov More Information » Funding Opportunities Award Search Print Text Size: A A A

449

2012 Annual Workforce Analysis and Staffing Plan Report - SC HQ  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Washington, DC 20585 Washington, DC 20585 MEMORANDUM TO KAREN L. BOARDMAN CHAIRPERSON FEDERAL TECHNICAL CAP ABILITY PANEL FROM: 1osEPH A. MCBREA a wi.~ '/t'f // c. DEPUTY DIRECT FOR FIELD OPE~ TIONS OFFICE OF SCIE CE SUBJECT: Annual Workforce Ail ysis and Staffing Plan Report for Calendar Year 2012 In response to your memo dated October 24, 2012, enclosed is the Office of Science (SC) Headquarters Workforce Analysis and Staffing Plan Report for Calendar Year 2012. The subject report was prepared in accordance with your guidance and represents the necessary resources required to provide oversight of Building 325 at Pacific Northwest National Laboratory, the only defense nuclear facility overseen by SC-Headquarters. If you have any questions, please contact me, or you may contact Carol Sohn at

450

2011 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

1 1 Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources ASCR Discovery Monthly News Roundup 2012 2011 2010 2009 2008 News Archives ASCR Program Documents ASCR Workshops and Conferences ASCR Presentations 100Gbps Science Network Related Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » Monthly News Roundup 2011 Print Text Size: A A A RSS Feeds FeedbackShare Page 2011 MONTHLY NEWS ROUNDUP 2011: January | February | March | April | May | June | July | August |

451

Organizational History | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Organizational Organizational History Basic Energy Sciences (BES) BES Home About Staff Organization Chart .pdf file (51KB) BES Budget BES Committees of Visitors Directions Jobs Organizational History Germantown Natural History President Kennedy's AEC Briefings Research Facilities Science Highlights Benefits of BES Funding Opportunities Basic Energy Sciences Advisory Committee (BESAC) News & Resources Contact Information Basic Energy Sciences U.S. Department of Energy SC-22/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3081 F: (301) 903-6594 E: sc.bes@science.doe.gov More Information » About Organizational History Print Text Size: A A A RSS Feeds FeedbackShare Page The Basic Energy Sciences (BES) organization was formed in June 1977. The origins of the federal research programs that became BES, however, are

452

WDTS Budget | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Budget Budget Workforce Development for Teachers and Scientists (WDTS) WDTS Home About Organization Chart .pdf file (24KB) Education Links WDTS Budget WDTS Committees of Visitors Jobs Science Undergraduate Laboratory Internships (SULI) Community College Internships (CCI) DOE Office of Science Graduate Fellowship (SCGF) Program External link Albert Einstein Distinguished Educator Fellowship (AEF) Program Visiting Faculty Program (VFP) at DOE Laboratories DOE National Science Bowl® (NSB) Laboratory Equipment Donation Program (LEDP) Outreach Contact Information Workforce Development for Teachers and Scientists U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-8842 F: (202) 586-0019 E: sc.wdts@science.doe.gov

453

FES Presentations | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Presentations Presentations Fusion Energy Sciences (FES) FES Home About Research Facilities Science Highlights Benefits of FES Funding Opportunities Fusion Energy Sciences Advisory Committee (FESAC) News & Resources Workshop Reports FES Presentations FES Program Documents Contact Information Fusion Energy Sciences U.S. Department of Energy SC-24/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4941 F: (301) 903-8584 E: sc.fes@science.doe.gov More Information » News & Resources FES Presentations Print Text Size: A A A RSS Feeds FeedbackShare Page Presenter Title/Subject/Organization Date/Link Dr. Edmund Synakowski Presentation delivered by Dr. Edmund Synakowski for the University Fusion Association Evening Session at the annual APS-DPP meeting on November 11, 2013 in Denver, CO. November 11, 2013 .pdf file (4.9MB)

454

February | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

February February Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources ASCR Discovery Monthly News Roundup 2012 2011 2010 2009 2008 News Archives ASCR Program Documents ASCR Workshops and Conferences ASCR Presentations 100Gbps Science Network Related Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » 2010 February Print Text Size: A A A RSS Feeds FeedbackShare Page ASCR Monthly Computing News Report - February 2010 2010: January | February | March | April | May | June | July | August |

455

Directions | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Directions Directions Advanced Scientific Computing Research (ASCR) ASCR Home About Staff Organization Chart .pdf file (85KB) ASCR Budget ASCR Committees of Visitors Directions Jobs Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » About Directions Print Text Size: A A A RSS Feeds FeedbackShare Page Directions to the Office of Advanced Scientific Computing and Research at DOE at Germantown, MD From Washington Dulles International Airport: External link

456

Transcribed Media | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Home Home Transcribed Media SC Home About ASCR HEP SBIR & STTR WDTS Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 Print Text Size: A A A RSS Feeds FeedbackShare Page SC Home 2012 A Flight Through the Universe, by the Sloan Digital Sky Survey Behind the Scenes at Berkeley Lab Science Lecture Series: Dr. Goyal Enrico Fermi Award Ceremony The Secretary and the Scientists The Building Blocks of a Detector for Nature's Building Blocks Ernest Orlando Lawrence Award Ceremony LBNL Computational Research and Theory Facility Groundbreaking Science Lecture Series: Higgs Boson, Dr. Incandela Dr. Perlmutter at DOE A Swell Electrode LNMO Nanoparticle 2011 Carbon Exchange Construction of the Dark Energy Camera

457

Exascale Challenges | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Scientific Scientific Discovery through Advanced Computing (SciDAC) » Exascale Challenges Advanced Scientific Computing Research (ASCR) ASCR Home About Research Applied Mathematics Computer Science Next Generation Networking Scientific Discovery through Advanced Computing (SciDAC) Co-Design SciDAC Institutes Computational Science Graduate Fellowship (CSGF) ASCR SBIR-STTR Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » Scientific Discovery through Advanced Computing (SciDAC)

458

Databases | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Databases Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Funding Opportunities Nuclear Science Advisory Committee (NSAC) News & Resources NP Workforce Survey Results .pdf file (258KB) Links Databases Workshop Reports Nuclear Physics Related Brochures and Videos Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E: sc.np@science.doe.gov More Information » News & Resources Databases Print Text Size: A A A RSS Feeds FeedbackShare Page Databases / Preprints Preprints Los Alamos Repository For Theory Preprints External link Los Alamos Repository For Experimental Preprints External link Nuclear Physics Databases

459

Grants Process | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Grants Process Grants Process Grants & Contracts Support Grants & Contracts Support Home About Funding Opportunity Announcements (FOAs) DOE National Laboratory Announcements Grants Process Grants Policy and Guidance FAQs Resources Contract Information Contact Information Grants & Contracts Support U.S. Department of Energy SC-43/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: 301-903-2859 E: sc.grantsandcontracts@science.doe.gov Grants Process Print Text Size: A A A RSS Feeds FeedbackShare Page Step 1: Registration Obtain a DUNS number External link Obtain an EIN number External link Register with the System for Award Management External link Register with FedConnect External link Register with the Federal Funding Accountability and Transparency Act Subaward Reporting System External link

460

Jobs | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Jobs Jobs Grants & Contracts Support Grants & Contracts Support Home About Organization Chart .pdf file (12KB) Jobs Grants/Contracts Differences Federal Agency Proposals Funding Opportunity Announcements (FOAs) DOE National Laboratory Announcements Grants Process Grants Policy and Guidance FAQs Resources Contract Information Contact Information Grants & Contracts Support U.S. Department of Energy SC-43/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: 301-903-2859 E: sc.grantsandcontracts@science.doe.gov About Jobs Print Text Size: A A A Subscribe FeedbackShare Page Current Open Federal Positions The Office of Grants and Contracts Support is located in Germantown, Maryland. All open federal positions listed below are posted on USAJobs.gov External link

Index
Note: This page contains sample records for the topic "al ga sc" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
461

september | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

September September Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources ASCR Discovery Monthly News Roundup 2012 2011 2010 2009 2008 News Archives ASCR Program Documents ASCR Workshops and Conferences ASCR Presentations 100Gbps Science Network Related Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » 2011 September Print Text Size: A A A RSS Feeds FeedbackShare Page ASCR Monthly Computing News Report - September 2011 2011: January | February | March | April | May | June | July | August |

462

FAQs | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

FAQs FAQs Grants & Contracts Support Grants & Contracts Support Home About Funding Opportunity Announcements (FOAs) DOE National Laboratory Announcements Grants Process Grants Policy and Guidance FAQs Resources Contract Information Contact Information Grants & Contracts Support U.S. Department of Energy SC-43/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: 301-903-2859 E: sc.grantsandcontracts@science.doe.gov FAQs Print Text Size: A A A RSS Feeds FeedbackShare Page Q. Help! I need help! A. The Office of Science has a number of resources available to help you. For help with Please contact The administrative, financial, or regulatory aspects of your award The Contracting Officer or Contracting Specialist identified in the Assistance Agreement

463

July | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

July July Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources ASCR Discovery Monthly News Roundup 2012 2011 2010 2009 2008 News Archives ASCR Program Documents ASCR Workshops and Conferences ASCR Presentations 100Gbps Science Network Related Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » 2008 July Print Text Size: A A A RSS Feeds FeedbackShare Page ASCR Monthly Computing News Report - July 2008 2008: January | Febrary | March | April | May | June | July | August |

464

European Labs | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

European European Labs Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Spinoff Applications SBIR/STTR Applications of Nuclear Science and Technology Funding Opportunities Nuclear Science Advisory Committee (NSAC) News & Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E: sc.np@science.doe.gov More Information » Benefits of NP European Labs Print Text Size: A A A RSS Feeds FeedbackShare Page European User Facilities: Catania National Laboratory of the South External link , Italy CELSIUS Storage Ring at The Svedberg Laboratory External link , Uppsala University, Sweden COSY Cooler Synchrotron External link , Jülich Research Center, Germany

465

Sharlene Weatherwax | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Sharlene Sharlene Weatherwax Biological and Environmental Research (BER) BER Home About Staff Program Contacts Organization Chart .pdf file (172KB) BER Budget BER Committees of Visitors Directions Jobs Research Facilities Science Highlights Benefits of BER Funding Opportunities Biological & Environmental Research Advisory Committee (BERAC) News & Resources Contact Information Biological and Environmental Research U.S. Department of Energy SC-23/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3251 F: (301) 903-5051 E: sc.ber@science.doe.gov More Information » Staff Sharlene Weatherwax Print Text Size: A A A RSS Feeds FeedbackShare Page Associate Director of Science for Biological and Environmental Research Click to enlarge photo. Enlarge Photo

466

ASCR Presentations | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Presentations Presentations Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources ASCR Discovery Monthly News Roundup News Archives ASCR Program Documents ASCR Workshops and Conferences ASCR Presentations 100Gbps Science Network Related Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » News & Resources ASCR Presentations Print Text Size: A A A RSS Feeds FeedbackShare Page SciDAC Futures .pdf file (1.2MB) August 2011 ASCR 2012 Budget Request to Congress .pdf file (2.0MB)

467

august | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

August August Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources ASCR Discovery Monthly News Roundup 2012 2011 2010 2009 2008 News Archives ASCR Program Documents ASCR Workshops and Conferences ASCR Presentations 100Gbps Science Network Related Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » 2011 August Print Text Size: A A A RSS Feeds FeedbackShare Page ASCR Monthly Computing News Report - August 2011 2011: January | February | March | April | May | June | July | August |

468

Origins | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Origins Origins Fusion Energy Sciences (FES) FES Home About Research Fusion Institutions Fusion Links International Activities Facilities Science Highlights Benefits of FES Funding Opportunities Fusion Energy Sciences Advisory Committee (FESAC) News & Resources Contact Information Fusion Energy Sciences U.S. Department of Energy SC-24/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4941 F: (301) 903-8584 E: sc.fes@science.doe.gov More Information » International Activities Origins Print Text Size: A A A RSS Feeds FeedbackShare Page ORIGINS OF U.S. INTERNATIONAL FUSION COLLABORATIONS Fusion can be said to have been born internationally, at PPPL, in 1951 when Lyman Spitzer read about fusion being accomplished in Argentina and wondered how that was done, starting the U.S. fusion program. On May

469

Full Program | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Agenda / Agenda / Presentations Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Funding Opportunities Nuclear Science Advisory Committee (NSAC) News & Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E: sc.np@science.doe.gov More Information » Workshop on The Nation's Needs for Isotopes: Present and Future Agenda / Presentations Print Text Size: A A A RSS Feeds FeedbackShare Page Monday, August 4 19:00 p.m. Poster Session Room open for mounting posters - Regency Randolph Room 19:15 -21:00 p.m. Meeting of Work Session Chairs - Adam Room Tuesday August 5 - Plenary Session: Plaza I & II Ballroom Chair: Jehanne Simon-Gillo

470

May | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

May May Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources ASCR Discovery Monthly News Roundup 2012 2011 2010 2009 2008 News Archives ASCR Program Documents ASCR Workshops and Conferences ASCR Presentations 100Gbps Science Network Related Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » 2009 May Print Text Size: A A A RSS Feeds FeedbackShare Page ASCR Monthly Computing News Report - May 2009 2009: January | Febrary | March | April | May | June | July | August |

471

NP Budget | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Budget Budget Nuclear Physics (NP) NP Home About Staff Organization Chart .pdf file (32KB) NP Budget NP Committees of Visitors Directions Jobs Labs & Universities Nuclear Physics Related Brochures Research Facilities Science Highlights Benefits of NP Funding Opportunities Nuclear Science Advisory Committee (NSAC) News & Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E: sc.np@science.doe.gov More Information » About NP Budget Print Text Size: A A A RSS Feeds FeedbackShare Page The following links contain NP's budget request to Congress for current and prior years: FY2014 Budget Request to Congress .pdf file (874KB) FY2013 Budget Request to Congress .pdf file (358KB)

472

Success Stories | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Success Stories Success Stories Laboratory Policy and Evaluation (LPE) LPE Home Staff M&O Contracts SC Laboratory Appraisal Process Laboratory Planning Process Work for Others in the Office of Science Laboratory Directed Research and Development (LDRD) DOE's Philosophy on LDRD Frequently Asked Questions Success Stories Brochures Additional Information LDRD Program Contacts Technology Transfer DOE National Laboratories Contact Information Laboratory Policy and Evaluation U.S. Department of Energy SC-32/Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5447 F: (202) 586-3119 Laboratory Directed Research and Development (LDRD) Success Stories Print Text Size: A A A RSS Feeds FeedbackShare Page The Laboratory Directed Research and Development Program provides the

473

Robin Hayes | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Robin Hayes Robin Hayes Basic Energy Sciences (BES) BES Home About Staff Organization Chart .pdf file (51KB) BES Budget BES Committees of Visitors Directions Jobs Organizational History Research Facilities Science Highlights Benefits of BES Funding Opportunities Basic Energy Sciences Advisory Committee (BESAC) News & Resources Contact Information Basic Energy Sciences U.S. Department of Energy SC-22/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3081 F: (301) 903-6594 E: sc.bes@science.doe.gov More Information » About Robin Hayes Print Text Size: A A A RSS Feeds FeedbackShare Page Hayes Robin Hayes Dr. Robin Hayes has worked with the DOE Energy Frontier Research Centers since September 2009, first as a AAAS Science and Technology Policy Fellow,

474

Vignettes | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Vignettes Vignettes Basic Energy Sciences (BES) BES Home About Research Facilities Science Highlights Benefits of BES Funding Opportunities Basic Energy Sciences Advisory Committee (BESAC) News & Resources Program Summaries Brochures Reports Accomplishments Discoveries Nobel Prizes Vignettes Archives Presentations BES and Congress Science for Energy Flow Seeing Matter Scale of Things Chart Contact Information Basic Energy Sciences U.S. Department of Energy SC-22/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3081 F: (301) 903-6594 E: sc.bes@science.doe.gov More Information » Accomplishments Vignettes Print Text Size: A A A RSS Feeds FeedbackShare Page Provided below are numerous vignettes of some significant Basic Energy Sciences program accomplishments. These brief accounts appear in the BES

475

News Archives | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

News News Archives Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources ASCR Discovery Monthly News Roundup News Archives ASCR Program Documents ASCR Workshops and Conferences ASCR Presentations 100Gbps Science Network Related Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » News & Resources News Archives Print Text Size: A A A RSS Feeds FeedbackShare Page October 27, 2008 U.S. Energy Department Streamlines Access to High-Tech User Facilities at

476

2012 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits