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Sample records for activex control buffer

  1. U-154: IBM Rational ClearQuest ActiveX Control Buffer Overflow...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    V-020: Apple QuickTime Multiple Flaws Let Remote Users Execute Arbitrary Code U-126: Cisco Adaptive Security Appliances Port Forwarder ActiveX Control Buffer Overflow ...

  2. V-086: IntegraXor ActiveX Control Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    The vulnerability is caused due to an error in the PE3DO32A.ocx ActiveX control and can be exploited to cause a buffer overflow.

  3. T-615: IBM Rational System Architect ActiveBar ActiveX Control Lets Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    There is a high risk security vulnerability with the ActiveBar ActiveX controls used by IBM Rational System Architect.

  4. U-154: IBM Rational ClearQuest ActiveX Control Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in IBM Rational ClearQuest. A remote user can cause arbitrary code to be executed on the target user's system.

  5. U-108: Net4Switch ipswcom ActiveX Control Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    The vulnerability is caused due to a boundary error within the "CxDbgPrint()" function (cxcmrt.dll) when creating a debug message string.

  6. U-126: Cisco Adaptive Security Appliances Port Forwarder ActiveX Control Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in Cisco ASA. A remote user can cause arbitrary code to be executed on the target user's system.

  7. U-177: Lotus Quickr for Domino ActiveX Control Buffer Overflow Lets Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in Lotus Quickr for Domino. A remote user can cause arbitrary code to be executed on the target user's system.

  8. ANALOG I/O MODULE TEST SYSTEM BASED ON EPICS CA PROTOCOL AND ACTIVEX CA INTERFACE

    SciTech Connect (OSTI)

    YENG,YHOFF,L.

    2003-10-13

    Analog input (ADC) and output (DAC) modules play a substantial role in device level control of accelerator and large experiment physics control system. In order to get the best performance some features of analog modules including linearity, accuracy, crosstalk, thermal drift and so on have to be evaluated during the preliminary design phase. Gain and offset error calibration and thermal drift compensation (if needed) may have to be done in the implementation phase as well. A natural technique for performing these tasks is to interface the analog VO modules and GPIB interface programmable test instruments with a computer, which can complete measurements or calibration automatically. A difficulty is that drivers of analog modules and test instruments usually work on totally different platforms (vxworks VS Windows). Developing new test routines and drivers for testing instruments under VxWorks (or any other RTOS) platform is not a good solution because such systems have relatively poor user interface and developing such software requires substantial effort. EPICS CA protocol and ActiveX CA interface provide another choice, a PC and LabVIEW based test system. Analog 110 module can be interfaced from LabVIEW test routines via ActiveX CA interface. Test instruments can be controlled via LabVIEW drivers, most of which are provided by instrument vendors or by National Instruments. Labview also provides extensive data analysis and process functions. Using these functions, users can generate powerful test routines very easily. Several applications built for Spallation Neutron Source (SNS) Beam Loss Monitor (BLM) system are described in this paper.

  9. Evaluating resilience of DNP3-controlled SCADA systems against event buffer flooding

    SciTech Connect (OSTI)

    Yan, Guanhua; Nicol, David M; Jin, Dong

    2010-12-16

    The DNP3 protocol is widely used in SCADA systems (particularly electrical power) as a means of communicating observed sensor state information back to a control center. Typical architectures using DNP3 have a two level hierarchy, where a specialized data aggregator device receives observed state from devices within a local region, and the control center collects the aggregated state from the data aggregator. The DNP3 communication between control center and data aggregator is asynchronous with the DNP3 communication between data aggregator and relays; this leads to the possibility of completely filling a data aggregator's buffer of pending events, when a relay is compromised or spoofed and sends overly many (false) events to the data aggregator. This paper investigates how a real-world SCADA device responds to event buffer flooding. A Discrete-Time Markov Chain (DTMC) model is developed for understanding this. The DTMC model is validated by a Moebius simulation model and data collected on real SCADA testbed.

  10. Burst Buffer

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Buffer Burst Buffer If you are interested in using the BB, please send a note to consult@nersc.gov to get enabled. Burst Buffer Architecture and Software Roadmap The Burst Buffer on Cori is a layer of non-volatile storage that sits between the a processors' memory and the parallel file system. The burst buffer will serve to accelerate I/O performance of application on Cori. Read More » Example batch scripts Burst Buffer usage documentation Read More » Burst Buffer Early User Program NERSC has

  11. U-225: Citrix Access Gateway Plug-in for Windows nsepacom ActiveX Control Vulnerabilities

    Broader source: Energy.gov [DOE]

    Two vulnerabilities in Citrix Access Gateway Plug-in for Windows can be exploited by malicious people to compromise a user's system.

  12. Electrodialysis operation with buffer solution

    DOE Patents [OSTI]

    Hryn, John N.; Daniels, Edward J.; Krumdick, Greg K.

    2009-12-15

    A new method for improving the efficiency of electrodialysis (ED) cells and stacks, in particular those used in chemical synthesis. The process entails adding a buffer solution to the stack for subsequent depletion in the stack during electrolysis. The buffer solution is regenerated continuously after depletion. This buffer process serves to control the hydrogen ion or hydroxide ion concentration so as to protect the active sites of electrodialysis membranes. The process enables electrodialysis processing options for products that are sensitive to pH changes.

  13. U-082: McAfee SaaS 'myCIOScn.dll' ActiveX Control Lets Remote...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Lets Remote Users Execute Arbitrary Code January 17, 2012 - 1:00pm Addthis PROBLEM: PHP Null Pointer Dereference in zendstrndup() Lets Local Users Deny Service PLATFORM: PHP...

  14. U-148: ActiveScriptRuby GRScript18.dll ActiveX Control Ruby Code Execution Vulnerability

    Broader source: Energy.gov [DOE]

    The vulnerability is caused due to an error in GRScript18.dll and can be exploited to execute arbitrary Ruby commands.

  15. BUFFERED WELL FIELD OUTLINES

    U.S. Energy Information Administration (EIA) Indexed Site

    Option Explicit Const cFEETPERMETER As Double 3.281 ' ' deviation factor is applied to the buffer distance ' so with a buffer distance of 100 and factor of 0.05 the ' ...

  16. BUFFERED WELL FIELD OUTLINES

    U.S. Energy Information Administration (EIA) Indexed Site

    OIL & GAS FIELD OUTLINES FROM BUFFERED WELLS The VBA Code below builds oil & gas field boundary outlines (polygons) from buffered wells (points). Input well points layer must be a feature class (FC) with the following attributes: Field_name Buffer distance (can be unique for each well to represent reservoirs with different drainage radii) ...see figure below. Copy the code into a new module. Inputs: In ArcMap, data frame named "Task 1" Well FC as first layer (layer 0). Output:

  17. U-081: McAfee SaaS 'myCIOScn.dll' ActiveX Control Lets Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    A remote user can create HTML that, when loaded by the target user, will execute arbitrary code on the target user's system.

  18. Mitigation of substrate defects in reticles using multilayer buffer layers

    DOE Patents [OSTI]

    Mirkarimi, Paul B.; Bajt, Sasa; Stearns, Daniel G.

    2001-01-01

    A multilayer film is used as a buffer layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The multilayer buffer layer deposited intermediate the reticle substrate and the reflective coating produces a smoothing of small particles and other defects on the reticle substrate. The reduction in defect size is controlled by surface relaxation during the buffer layer growth process and by the degree of intermixing and volume contraction of the materials at the multilayer interfaces. The buffer layers are deposited at near-normal incidence via a low particulate ion beam sputtering process. The growth surface of the buffer layer may also be heated by a secondary ion source to increase the degree of intermixing and improve the mitigation of defects.

  19. Doped LZO buffer layers for laminated conductors

    DOE Patents [OSTI]

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2010-03-23

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  20. Burst Buffer Architecture and Software Roadmap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Burst Buffer Architecture Burst Buffer Architecture and Software Roadmap NERSC has been working with Cray to bring BurstBuffer technology to the users of Cori. The NERSC BurstBuffer is based on Cray DataWarp that utilizes flash or SSD (solid-state drive) technologies to significantly increase the I/O performance on Cori. Motivation In order to meet users' requests for better I/O performance NERSC is installing a Burst Buffer. There are two aspects of I/O performance. One aspect is the total

  1. Signature-based store checking buffer

    DOE Patents [OSTI]

    Sridharan, Vilas; Gurumurthi, Sudhanva

    2015-06-02

    A system and method for optimizing redundant output verification, are provided. A hardware-based store fingerprint buffer receives multiple instances of output from multiple instances of computation. The store fingerprint buffer generates a signature from the content included in the multiple instances of output. When a barrier is reached, the store fingerprint buffer uses the signature to verify the content is error-free.

  2. Buffered coscheduling for parallel programming and enhanced fault tolerance

    DOE Patents [OSTI]

    Petrini, Fabrizio; Feng, Wu-chun

    2006-01-31

    A computer implemented method schedules processor jobs on a network of parallel machine processors or distributed system processors. Control information communications generated by each process performed by each processor during a defined time interval is accumulated in buffers, where adjacent time intervals are separated by strobe intervals for a global exchange of control information. A global exchange of the control information communications at the end of each defined time interval is performed during an intervening strobe interval so that each processor is informed by all of the other processors of the number of incoming jobs to be received by each processor in a subsequent time interval. The buffered coscheduling method of this invention also enhances the fault tolerance of a network of parallel machine processors or distributed system processors

  3. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2006-10-31

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  4. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2010-06-15

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  5. Target buffer assessment for accelerator driven transmuters.

    SciTech Connect (OSTI)

    Gohar, Y.

    2002-10-08

    Accelerator driven transmuters use a buffer region to protect the structural and the cladding materials of the transmuter from the radiation damage caused by the high-energy spallation neutrons, to accommodate the coolant channels of the self cooled targets, and to have an insignificant effect on the neutron utilization for the transmutation process. These functions are contradicting with respect to the buffer thickness. An extension of the target region in the axial direction (the proton beam direction) is also required to act as a neutron multiplier for the forward component of the high-energy spallation neutrons and a reflector to minimize the neutron leakage. The buffer assessment was performed as a function of its thickness with different proton energies for a self-cooled Lead-Bismuth Eutectic and a sodium-cooled tungsten targets. The analyses show that the number of generated neutrons per proton has a low sensitivity to the buffer thickness. However, the number of neutrons reaching the transmuter is significantly reduced as the buffer thickness is increased. The transmuter neutrons dominate the nuclear responses in the structural material outside the target buffer. The length of the axial target extension is determined as a function of the proton beam energy.

  6. V-188: Apache XML Security XPointer Expressions Processing Buffer...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    8: Apache XML Security XPointer Expressions Processing Buffer Overflow Vulnerability V-188: Apache XML Security XPointer Expressions Processing Buffer Overflow Vulnerability June...

  7. V-182: Symantec Endpoint Protection Manager Buffer Overflow Vulnerabil...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    2: Symantec Endpoint Protection Manager Buffer Overflow Vulnerability V-182: Symantec Endpoint Protection Manager Buffer Overflow Vulnerability June 20, 2013 - 6:00am Addthis...

  8. Catalyst functionalized buffer sorbent pebbles for rapid separation...

    Office of Scientific and Technical Information (OSTI)

    Catalyst functionalized buffer sorbent pebbles for rapid separation of carbon dioxide from gas mixtures Title: Catalyst functionalized buffer sorbent pebbles for rapid separation ...

  9. Reprogrammable read only variable threshold transistor memory with isolated addressing buffer

    DOE Patents [OSTI]

    Lodi, Robert J.

    1976-01-01

    A monolithic integrated circuit, fully decoded memory comprises a rectangular array of variable threshold field effect transistors organized into a plurality of multi-bit words. Binary address inputs to the memory are decoded by a field effect transistor decoder into a plurality of word selection lines each of which activates an address buffer circuit. Each address buffer circuit, in turn, drives a word line of the memory array. In accordance with the word line selected by the decoder the activated buffer circuit directs reading or writing voltages to the transistors comprising the memory words. All of the buffer circuits additionally are connected to a common terminal for clearing all of the memory transistors to a predetermined state by the application to the common terminal of a large magnitude voltage of a predetermined polarity. The address decoder, the buffer and the memory array, as well as control and input/output control and buffer field effect transistor circuits, are fabricated on a common substrate with means provided to isolate the substrate of the address buffer transistors from the remainder of the substrate so that the bulk clearing function of simultaneously placing all of the memory transistors into a predetermined state can be performed.

  10. GaAs buffer layer technique for vertical nanowire growth on Si substrate

    SciTech Connect (OSTI)

    Xu, Xiaoqing Parizi, Kokab B.; Huo, Yijie; Kang, Yangsen; Philip Wong, H.-S.; Li, Yang

    2014-02-24

    Gold catalyzed vapor-liquid-solid method is widely applied to IIIV nanowire (NW) growth on Si substrate. However, the easy oxidation of Si, possible Si contamination in the NWs, high defect density in the NWs, and high sensitivity of the NW morphology to growth conditions largely limit its controllability. In this work, we developed a buffer layer technique by introducing a GaAs thin film with predefined polarity as a template. It is found that samples grown on these buffer layers all have high vertical NW yields in general, due to the single-orientation of the buffer layers. Low temperature buffer with smoother surface leads to highest yield of vertical NWs, while high temperature (HT) buffer with better crystallinity results in perfect NW quality. The defect-free property we observed here is very promising for optoelectronic device applications based on GaAs NW. Moreover, the buffer layers can eliminate Si contamination by preventing Si-Au alloy formation and by increasing the thickness of the Si diffusion barrier, thus providing more flexibility to vertical NW growth. The buffer layer technique we demonstrated here could be easily extended to other III-V on Si system for electronic and photonic applications.

  11. Buffer layers on biaxially textured metal substrates

    DOE Patents [OSTI]

    Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

    2001-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  12. Early Users to Test New Burst Buffer on Cori

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Early Users to Test New Burst Buffer on Cori Early Users to Test New Burst Buffer on Cori Designed to Accelerate IO Performance October 5, 2015 Corimockup NERSC has selected a ...

  13. Buffer for a gamma-insensitive optical sensor with gas and a buffer assembly

    DOE Patents [OSTI]

    Kruger, H.W.

    1994-05-10

    A buffer assembly is disclosed for a gamma-insensitive gas avalanche focal plane array operating in the ultra-violet/visible/infrared energy wavelengths and using a photocathode and an avalanche gas located in a gap between an anode and the photocathode. The buffer assembly functions to eliminate chemical compatibility between the gas composition and the materials of the photocathode. The buffer assembly in the described embodiment is composed of two sections, a first section constructed of glass honeycomb under vacuum and a second section defining a thin barrier film or membrane constructed, for example, of Al and Be, which is attached to and supported by the honeycomb. The honeycomb section, in turn, is supported by and adjacent to the photocathode. 7 figures.

  14. Buffer layers and articles for electronic devices

    DOE Patents [OSTI]

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  15. Early Users to Test New Burst Buffer on Cori

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Early Users to Test New Burst Buffer on Cori Early Users to Test New Burst Buffer on Cori Designed to Accelerate I/O Performance October 5, 2015 Corimockup NERSC has selected a number of HPC research projects to participate in the center's new Burst Buffer Early User Program, where they will be able to test and run their codes using the new Burst Buffer feature on the center's newest supercomputer, Cori. Cori Phase 1, recently installed in the new Computational Research and Theory building at

  16. V-182: Symantec Endpoint Protection Manager Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    Symantec was notified of a pre-authentication buffer overflow found in the Symantec Endpoint Protection Manager (SEPM) and Symantec Endpoint Protection Center (SPC)

  17. CHEMICAL SOLUTION DEPOSITION BASED OXIDE BUFFERS AND YBCO COATED...

    Office of Scientific and Technical Information (OSTI)

    to obtain the flexible, biaxially oriented copper, nickel or nickel-alloy substrates. Buffers and Rare Earth Barium Copper Oxide (REBCO) superconductors have been deposited ...

  18. V-123: VMware ESX / ESXi libxml2 Buffer Underflow Vulnerability...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    (2044373) Addthis Related Articles U-128: VMware ESXESXi Buffer Overflow and Null Pointer Dereference Lets Local Users Gain Elevated Privileges T-552: Cisco Nexus 1000V...

  19. Back contact buffer layer for thin-film solar cells

    DOE Patents [OSTI]

    Compaan, Alvin D.; Plotnikov, Victor V.

    2014-09-09

    A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

  20. Epitaxial Growth of Strontium Bismuth Tantalate/Niobate of Buffered...

    Office of Scientific and Technical Information (OSTI)

    of Strontium Bismuth TantalateNiobate of Buffered Magnesium Oxide Substrates Citation Details In-Document Search Title: Epitaxial Growth of Strontium Bismuth TantalateNiobate ...

  1. Buffer layer for thin film structures (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate ...

  2. Methods for improved growth of group III nitride buffer layers

    DOE Patents [OSTI]

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  3. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOE Patents [OSTI]

    Morse, Jeffrey D.; Cooper, Gregory A.

    2002-01-01

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  4. U-116: IBM Tivoli Provisioning Manager Express for Software Distributi...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    for the affected ActiveX control Addthis Related Articles V-145: IBM Tivoli Federated Identity Manager Products Java Multiple Vulnerabilities V-094: IBM Multiple Products Multiple...

  5. Replenishing data descriptors in a DMA injection FIFO buffer

    DOE Patents [OSTI]

    Archer, Charles J.; Blocksome, Michael A.; Cernohous, Bob R.; Heidelberger, Philip; Kumar, Sameer; Parker, Jeffrey J.

    2011-10-11

    Methods, apparatus, and products are disclosed for replenishing data descriptors in a Direct Memory Access (`DMA`) injection first-in-first-out (`FIFO`) buffer that include: determining, by a messaging module on an origin compute node, whether a number of data descriptors in a DMA injection FIFO buffer exceeds a predetermined threshold, each data descriptor specifying an application message for transmission to a target compute node; queuing, by the messaging module, a plurality of new data descriptors in a pending descriptor queue if the number of the data descriptors in the DMA injection FIFO buffer exceeds the predetermined threshold; establishing, by the messaging module, interrupt criteria that specify when to replenish the injection FIFO buffer with the plurality of new data descriptors in the pending descriptor queue; and injecting, by the messaging module, the plurality of new data descriptors into the injection FIFO buffer in dependence upon the interrupt criteria.

  6. Gilliam County Riparian Buffers; 2003-2004 Annual Reports.

    SciTech Connect (OSTI)

    Coiner, Josh

    2004-06-01

    Interest appears to be at an all-time high for riparian conservation programs in Gilliam County. With the recently added Herbaceous Buffer and the already established CREP program interest is booming. However, more and more people are turning towards the herbaceous buffer because of expense. The riparian forest buffer is becoming too expensive. Even with the excellent cost share and incentives landowners are having trouble with Farm Service Agency's payment limitation. Because of this payment limitation landowners are not receiving their full rental and incentive payments, usually in year one. This has cooled the installation of riparian forest buffers and peaked interest in the CP-29 (Herbaceous Buffer for Wildlife). Either way, riparian lands are being enhanced and water quality is being improved. Year three should be very similar to the accomplishments of year 2. There has already been several projects proposed that may or may not be approved during year 3. I am currently working on three projects that are all over 2.5 miles long on each side and total anywhere from 60 to 250 acres in size. Along with these three projects there at least seven small projects being proposed. Four of those projects are riparian forest buffers and the remaining are herbaceous buffers.

  7. Enhanced adhesion for LIGA microfabrication by using a buffer layer

    DOE Patents [OSTI]

    Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

    2001-01-01

    The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

  8. Buffer layers for REBCO films for use in superconducting devices

    DOE Patents [OSTI]

    Goyal, Amit; Wee, Sung-Hun

    2014-06-10

    A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

  9. Enhanced adhesion for LIGA microfabrication by using a buffer layer

    DOE Patents [OSTI]

    Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

    2004-01-27

    The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

  10. Buffer layers on biaxially textured metal substrates (Patent...

    Office of Scientific and Technical Information (OSTI)

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzingannealing in ...

  11. Method of depositing buffer layers on biaxially textured metal...

    Office of Scientific and Technical Information (OSTI)

    eu; gd; tb; tm; resup1subx; resup2sub1-xsub2; osub3; buffer; layer; deposited; sol-gel; metal-organic; decomposition; laminate; article; layer; ybco; resup1subx; ...

  12. Optimizing the availability of a buffered industrial process

    DOE Patents [OSTI]

    Martz, Jr., Harry F.; Hamada, Michael S.; Koehler, Arthur J.; Berg, Eric C.

    2004-08-24

    A computer-implemented process determines optimum configuration parameters for a buffered industrial process. A population size is initialized by randomly selecting a first set of design and operation values associated with subsystems and buffers of the buffered industrial process to form a set of operating parameters for each member of the population. An availability discrete event simulation (ADES) is performed on each member of the population to determine the product-based availability of each member. A new population is formed having members with a second set of design and operation values related to the first set of design and operation values through a genetic algorithm and the product-based availability determined by the ADES. Subsequent population members are then determined by iterating the genetic algorithm with product-based availability determined by ADES to form improved design and operation values from which the configuration parameters are selected for the buffered industrial process.

  13. CHEMICAL SOLUTION DEPOSITION BASED OXIDE BUFFERS AND YBCO COATED CONDUCTORS

    SciTech Connect (OSTI)

    Paranthaman, Mariappan Parans

    2011-01-01

    We have reviewed briefly the growth of buffer and high temperature superconducting oxide thin films using a chemical solution deposition (CSD) method. In the Rolling-Assisted Biaxially Textured Substrates (RABiTS) process, developed at Oak Ridge National Laboratory, utilizes the thermo mechanical processing to obtain the flexible, biaxially oriented copper, nickel or nickel-alloy substrates. Buffers and Rare Earth Barium Copper Oxide (REBCO) superconductors have been deposited epitaxially on the textured nickel alloy substrates. The starting substrate serves as a template for the REBCO layer, which has substantially fewer weak links. Buffer layers play a major role in fabricating the second generation REBCO wire technology. The main purpose of the buffer layers is to provide a smooth, continuous and chemically inert surface for the growth of the REBCO film, while transferring the texture from the substrate to the superconductor layer. To achieve this, the buffer layers need to be epitaxial to the substrate, i.e. they have to nucleate and grow in the same bi-axial texture provided by the textured metal foil. The most commonly used RABiTS multi-layer architectures consist of a starting template of biaxially textured Ni-5 at.% W (Ni-W) substrate with a seed (first) layer of Yttrium Oxide (Y2O3), a barrier (second) layer of Yttria Stabilized Zirconia (YSZ), and a Cerium Oxide (CeO2) cap (third) layer. These three buffer layers are generally deposited using physical vapor deposition (PVD) techniques such as reactive sputtering. On top of the PVD template, REBCO film is then grown by a chemical solution deposition. This article reviews in detail about the list of oxide buffers and superconductor REBCO films grown epitaxially on single crystal and/or biaxially textured Ni-W substrates using a CSD method.

  14. Message communications of particular message types between compute nodes using DMA shadow buffers

    DOE Patents [OSTI]

    Blocksome, Michael A.; Parker, Jeffrey J.

    2010-11-16

    Message communications of particular message types between compute nodes using DMA shadow buffers includes: receiving a buffer identifier specifying an application buffer having a message of a particular type for transmission to a target compute node through a network; selecting one of a plurality of shadow buffers for a DMA engine on the compute node for storing the message, each shadow buffer corresponding to a slot of an injection FIFO buffer maintained by the DMA engine; storing the message in the selected shadow buffer; creating a data descriptor for the message stored in the selected shadow buffer; injecting the data descriptor into the slot of the injection FIFO buffer corresponding to the selected shadow buffer; selecting the data descriptor from the injection FIFO buffer; and transmitting the message specified by the selected data descriptor through the data communications network to the target compute node.

  15. Rare earth zirconium oxide buffer layers on metal substrates

    DOE Patents [OSTI]

    Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

    2001-01-01

    A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  16. Method of depositing buffer layers on biaxially textured metal substrates

    DOE Patents [OSTI]

    Beach, David B.; Morrell, Jonathan S.; Paranthaman, Mariappan; Chirayil, Thomas; Specht, Eliot D.; Goyal, Amit

    2002-08-27

    A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  17. High speed, very large (8 megabyte) first in/first out buffer memory (FIFO)

    DOE Patents [OSTI]

    Baumbaugh, Alan E.; Knickerbocker, Kelly L.

    1989-01-01

    A fast FIFO (First In First Out) memory buffer capable of storing data at rates of 100 megabytes per second. The invention includes a data packer which concatenates small bit data words into large bit data words, a memory array having individual data storage addresses adapted to store the large bit data words, a data unpacker into which large bit data words from the array can be read and reconstructed into small bit data words, and a controller to control and keep track of the individual data storage addresses in the memory array into which data from the packer is being written and data to the unpacker is being read.

  18. Buffer layers on metal alloy substrates for superconducting tapes

    DOE Patents [OSTI]

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-10-05

    An article including a substrate, at least one intermediate layer upon the surface of the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the at least one intermediate layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected I.sub.c 's of over 200 Amperes across a sample 1 cm wide.

  19. SMOOTH OIL & GAS FIELD OUTLINES MADE FROM BUFFERED WELLS

    U.S. Energy Information Administration (EIA) Indexed Site

    The VBA code provided at the bottom of this document is an updated version (from ArcGIS 9.0 to ArcGIS 9.2) of the polygon smoothing algorithm described below. A bug that occurred when multiple wells had the same location was also fixed. SMOOTH OIL & GAS FIELD OUTLINE POLYGONS MADE FROM BUFFERED WELLS Why smooth buffered field outlines? See the issues in the figure below: [pic] The smoothing application provided as VBA code below does the following: Adds area to the concave portions; doesn't

  20. T-626: Xen Multiple Buffer Overflow and Integer Overflow Vulnerabilities

    Broader source: Energy.gov [DOE]

    It was found that the xc_try_bzip2_decode() and xc_try_lzma_decode() decode routines did not correctly check for a possible buffer size overflow in the decoding loop. As well, several integer overflow flaws and missing error/range checking were found that could lead to an infinite loop. A privileged guest user could use these flaws to crash the guest or, possibly, execute arbitrary code in the privileged management domain (Dom0). (CVE-2011-1583)

  1. Buffer layers on metal alloy substrates for superconducting tapes

    DOE Patents [OSTI]

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-06-29

    An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

  2. V-228: RealPlayer Buffer Overflow and Memory Corruption Error...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    V-228: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote Users Execute ... Lets Remote Users Execute Arbitrary Code V-049: RealPlayer Buffer Overflow and Invalid ...

  3. U-056: Linux Kernel HFS Buffer Overflow Lets Local Users Gain...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Linux Kernel HFS Buffer Overflow Lets Local Users Gain Root Privileges U-056: Linux Kernel HFS Buffer Overflow Lets Local Users Gain Root Privileges December 9, 2011 - 8:00am...

  4. V-219: Kingsoft Writer 2012 WPS Font Names Buffer Overflow Vulnerabili...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    9: Kingsoft Writer 2012 WPS Font Names Buffer Overflow Vulnerability V-219: Kingsoft Writer 2012 WPS Font Names Buffer Overflow Vulnerability August 16, 2013 - 5:52am Addthis...

  5. Sol-gel deposition of buffer layers on biaxially textured metal...

    Office of Scientific and Technical Information (OSTI)

    Sol-gel deposition of buffer layers on biaxially textured metal substances Citation Details In-Document Search Title: Sol-gel deposition of buffer layers on biaxially textured ...

  6. Buffer layer for thin film structures (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Buffer layer for thin film structures Citation Details In-Document Search Title: Buffer layer for thin film structures A composite structure including a base substrate and a layer...

  7. Photo-induced wettability of TiO{sub 2} film with Au buffer layer

    SciTech Connect (OSTI)

    Purkayastha, Debarun Dhar; Sangani, L. D. Varma; Krishna, M. Ghanashyam; Madhurima, V.

    2014-04-24

    The effect of thickness of Au buffer layer (15-25 nm) between TiO{sub 2} film and substrate on the wettability of TiO{sub 2} films is reported. TiO{sub 2} films grown on Au buffer layer have a higher contact angle of 96-;100 as compared to 47.6o for the film grown without buffer layer. The transition from hydrophobicity to hydrophilicity under UV irradiation occurs within 10 min. for the buffer layered films whereas it is almost 30 min. for the film grown without buffer layer. The enhanced photo induced hydrophilicity is shown to be surface energy driven.

  8. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOE Patents [OSTI]

    Sankar, Sambasivan; Goyal, Amit; Barnett, Scott A.; Kim, Ilwon; Kroeger, Donald M.

    2004-08-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

  9. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOE Patents [OSTI]

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

    2009-03-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  10. Field measurement of moisture-buffering model inputs for residential buildings

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Woods, Jason; Winkler, Jon

    2016-02-05

    Moisture adsorption and desorption in building materials impact indoor humidity. This effect should be included in building-energy simulations, particularly when humidity is being investigated or controlled. Several models can calculate this moisture-buffering effect, but accurate ones require model inputs that are not always known to the user of the building-energy simulation. This research developed an empirical method to extract whole-house model inputs for the effective moisture penetration depth (EMPD) model. The experimental approach was to subject the materials in the house to a square-wave relative-humidity profile, measure all of the moisture-transfer terms (e.g., infiltration, air-conditioner condensate), and calculate the onlymore » unmeasured term—the moisture sorption into the materials. We validated this method with laboratory measurements, which we used to measure the EMPD model inputs of two houses. After deriving these inputs, we measured the humidity of the same houses during tests with realistic latent and sensible loads and demonstrated the accuracy of this approach. Furthermore, these results show that the EMPD model, when given reasonable inputs, is an accurate moisture-buffering model.« less

  11. Buffer layers on rolled nickel or copper as superconductor substrates

    DOE Patents [OSTI]

    Paranthaman, Mariappan; Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /CeO.sub.2 /Ni, RE.sub.2 O.sub.3 /Ni (RE=Rare Earth), and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /CeO.sub.2 /Cu, RE.sub.2 O.sub.3 /Cu, and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approach, which includes chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

  12. Superconducting composite with multilayer patterns and multiple buffer layers

    DOE Patents [OSTI]

    Wu, X.D.; Muenchausen, R.E.

    1993-10-12

    An article of manufacture is described including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superconductor. 5 figures.

  13. T-695: Avaya Aura Application Server Buffer Overflow in 'cstore.exe' Lets Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    Avaya Aura Application Server Buffer Overflow in 'cstore.exe' Lets Remote Users Execute Arbitrary Code.

  14. Doped Y.sub.2O.sub.3 buffer layers for laminated conductors

    DOE Patents [OSTI]

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2007-08-21

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y.sub.2O.sub.3 and a dopant for blocking cation diffusion through the Y.sub.2O.sub.3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  15. Inert Gas Buffered Milling and Particle Size Separation of μm...

    Office of Scientific and Technical Information (OSTI)

    Size Separation of m-Scale Superconducting Precursor Powders Citation Details In-Document Search Title: Inert Gas Buffered Milling and Particle Size Separation of ...

  16. U-207: Pidgin 'mxit_show_message()' Function Stack-Based Buffer...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PROBLEM: Pidgin 'mxitshowmessage()' Function Stack-Based Buffer Overflow Vulnerability. PLATFORM: Versions prior to Pidgin 2.10.5 vulnerable. ABSTRACT: Pidgin is prone to a...

  17. Superconducting composite with multilayer patterns and multiple buffer layers

    DOE Patents [OSTI]

    Wu, Xin D.; Muenchausen, Ross E.

    1993-01-01

    An article of manufacture including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superco n FIELD OF THE INVENTION The present invention relates to the field of superconducting articles having two distinct regions of superconductive material with differing in-plane orientations whereby the conductivity across the boundary between the two regions can be tailored. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  18. Catalyst functionalized buffer sorbent pebbles for rapid separation of carbon dioxide from gas mixtures

    DOE Patents [OSTI]

    Aines, Roger D

    2015-03-31

    A method for separating CO.sub.2 from gas mixtures uses a slurried media impregnated with buffer compounds and coating the solid media with a catalyst or enzyme that promotes the transformation of CO.sub.2 to carbonic acid. Buffer sorbent pebbles with a catalyst or enzyme coating are provided for rapid separation of CO.sub.2 from gas mixtures.

  19. Catalyst functionalized buffer sorbent pebbles for rapid separation of carbon dioxide from gas mixtures

    DOE Patents [OSTI]

    Aines, Roger D.

    2013-03-12

    A method for separating CO.sub.2 from gas mixtures uses a slurried media impregnated with buffer compounds and coating the solid media with a catalyst or enzyme that promotes the transformation of CO.sub.2 to carbonic acid. Buffer sorbent pebbles with a catalyst or enzyme coating are provided for rapid separation of CO.sub.2 from gas mixtures.

  20. T-548: Novell ZENworks Handheld Management (ZHM) ZfHIPCnd.exe buffer overflow

    Broader source: Energy.gov [DOE]

    Novell ZENworks Handheld Management (ZHM) is vulnerable to a heap-based buffer overflow, caused by improper bounds checking by the ZfHIPCnd.exe Access Point process. By sending a specially-crafted request to TCP port 2400, a remote attacker could overflow a buffer and execute arbitrary code on the system with SYSTEM privileges or cause the application to crash.

  1. Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom

    DOE Patents [OSTI]

    Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    The present invention provides methods and biaxially textured articles having a deformed epitaxial layer formed therefrom for use with high temperature superconductors, photovoltaic, ferroelectric, or optical devices. A buffer layer is epitaxially deposited onto biaxially-textured substrates and then mechanically deformed. The deformation process minimizes or eliminates grooves, or other irregularities, formed on the buffer layer while maintaining the biaxial texture of the buffer layer. Advantageously, the biaxial texture of the buffer layer is not altered during subsequent heat treatments of the deformed buffer. The present invention provides mechanical densification procedures which can be incorporated into the processing of superconducting films through the powder deposit or precursor approaches without incurring unfavorable high-angle grain boundaries.

  2. Propagation of misfit dislocations from buffer/Si interface into Si

    DOE Patents [OSTI]

    Liliental-Weber, Zuzanna; Maltez, Rogerio Luis; Morkoc, Hadis; Xie, Jinqiao

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  3. Buffer architecture for biaxially textured structures and method of fabricating same

    DOE Patents [OSTI]

    Norton, David P.; Park, Chan; Goyal, Amit

    2004-04-06

    The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO.sub.2 and/or HfO.sub.2. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO.sub.2 and HfO.sub.2. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1.times.10.sup.-5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  4. Comparator circuits with local ramp buffering for a column-parallel single slope ADC

    DOE Patents [OSTI]

    Milkov, Mihail M.

    2016-04-26

    A comparator circuit suitable for use in a column-parallel single-slope analog-to-digital converter comprises a comparator, an input voltage sampling switch, a sampling capacitor arranged to store a voltage which varies with an input voltage when the sampling switch is closed, and a local ramp buffer arranged to buffer a global voltage ramp applied at an input. The comparator circuit is arranged such that its output toggles when the buffered global voltage ramp exceeds the stored voltage. Both DC- and AC-coupled comparator embodiments are disclosed.

  5. V-049: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Execute Arbitrary Code | Department of Energy 9: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users Execute Arbitrary Code V-049: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users Execute Arbitrary Code December 18, 2012 - 1:30am Addthis PROBLEM: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users Execute Arbitrary Code PLATFORM: Windows RealPlayer 15.0.6.14 and prior. ABSTRACT: Two vulnerabilities were reported in RealPlayer. REFERENCE

  6. V-114: RealPlayer MP4 Processing Buffer Overflow Vulnerability | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy 14: RealPlayer MP4 Processing Buffer Overflow Vulnerability V-114: RealPlayer MP4 Processing Buffer Overflow Vulnerability March 19, 2013 - 12:01am Addthis PROBLEM: RealPlayer MP4 Processing Buffer Overflow Vulnerability PLATFORM: Versions prior to 16.0.1.18. ABSTRACT: A vulnerability has been reported in RealPlayer REFERENCE LINKS: RealNetworks, Inc Secunia Advisory SA52692 CVE-2013-1750 IMPACT ASSESSMENT: High DISCUSSION: The vulnerability is caused due to an error when

  7. Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates

    DOE Patents [OSTI]

    Paranthaman, Mariappan (Knoxville, TN); Goyal, Amit (Knoxville, TN); Kroeger, Donald M. (Knoxville, TN); List, III, Frederic A. (Andersonville, TN)

    2002-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

  8. MgO buffer layers on rolled nickel or copper as superconductor substrates

    DOE Patents [OSTI]

    Paranthaman, Mariappan (Knoxville, TN); Goyal, Amit (Knoxville, TN); Kroeger, Donald M. (Knoxville, TN); List, III, Frederic A. (Andersonville, TN)

    2001-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

  9. V-049: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    V-049: RealPlayer Buffer Overflow and Invalid Pointer Flaw Let Remote Users Execute ... The vendor has issued a fix (16.0.0.282). Addthis Related Articles V-228: RealPlayer ...

  10. Critical CuI buffer layer surface density for organic molecular crystal orientation change

    SciTech Connect (OSTI)

    Ahn, Kwangseok; Kim, Jong Beom; Lee, Dong Ryeol; Kim, Hyo Jung; Lee, Hyun Hwi

    2015-01-21

    We have determined the critical surface density of the CuI buffer layer inserted to change the preferred orientation of copper phthalocyanine (CuPc) crystals grown on the buffer layer. X-ray reflectivity measurements were performed to obtain the density profiles of the buffer layers and out-of-plane and 2D grazing-incidence X-ray diffraction measurements were performed to determine the preferred orientations of the molecular crystals. Remarkably, it was found that the preferred orientation of the CuPc film is completely changed from edge-on (1 0 0) to face-on (1 1 −2) by a CuI buffer layer with a very low surface density, so low that a large proportion of the substrate surface is bare.

  11. T-583: Linux Kernel OSF Partition Table Buffer Overflow Lets Local Users Obtain Information

    Broader source: Energy.gov [DOE]

    A local user can create a storage device with specially crafted OSF partition tables. When the kernel automatically evaluates the partition tables, a buffer overflow may occur and data from kernel heap space may leak to user-space.

  12. U-115: Novell GroupWise Client Address Book Processing Buffer Overflow Vulnerability

    Broader source: Energy.gov [DOE]

    The vulnerability is caused due to an error when processing Novell Address Book (".nab") files and can be exploited to cause a heap-based buffer overflow via an overly long email address.

  13. Controlling

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Controlling chaos in low- and high-dimensional systems with periodic parametric perturbations K. A. Mirus and J. C. Sprott Department of Physics, University of Wisconsin, Madison, Wisconsin 53706 ͑Received 29 June 1998͒ The effect of applying a periodic perturbation to an accessible parameter of various chaotic systems is examined. Numerical results indicate that perturbation frequencies near the natural frequencies of the unstable periodic orbits of the chaotic systems can result in limit

  14. Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

    DOE Patents [OSTI]

    Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

    2005-10-18

    An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  15. Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

    DOE Patents [OSTI]

    Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

    2003-09-09

    An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  16. Optically pumped alkali laser and amplifier using helium-3 buffer gas

    DOE Patents [OSTI]

    Beach, Raymond J.; Page, Ralph; Soules, Thomas; Stappaerts, Eddy; Wu, Sheldon Shao Quan

    2010-09-28

    In one embodiment, a laser oscillator is provided comprising an optical cavity, the optical cavity including a gain medium including an alkali vapor and a buffer gas, the buffer gas including .sup.3He gas, wherein if .sup.4He gas is also present in the buffer gas, the ratio of the concentration of the .sup.3He gas to the .sup.4He gas is greater than 1.37.times.10.sup.-6. Additionally, an optical excitation source is provided. Furthermore, the laser oscillator is capable of outputting radiation at a first frequency. In another embodiment, an apparatus is provided comprising a gain medium including an alkali vapor and a buffer gas including .sup.3He gas, wherein if .sup.4He gas is also present in the buffer gas, the ratio of the concentration of the .sup.3He gas to the .sup.4He gas is greater than 1.37.times.10.sup.-6. Other embodiments are also disclosed.

  17. Buffer layer between a planar optical concentrator and a solar cell

    SciTech Connect (OSTI)

    Solano, Manuel E.; Barber, Greg D.; Lakhtakia, Akhlesh; Faryad, Muhammad; Monk, Peter B.; Mallouk, Thomas E.

    2015-09-15

    The effect of inserting a buffer layer between a periodically multilayered isotropic dielectric (PMLID) material acting as a planar optical concentrator and a photovoltaic solar cell was theoretically investigated. The substitution of the photovoltaic material by a cheaper dielectric material in a large area of the structure could reduce the fabrication costs without significantly reducing the efficiency of the solar cell. Both crystalline silicon (c-Si) and gallium arsenide (GaAs) were considered as the photovoltaic material. We found that the buffer layer can act as an antireflection coating at the interface of the PMLID and the photovoltaic materials, and the structure increases the spectrally averaged electron-hole pair density by 36% for c-Si and 38% for GaAs compared to the structure without buffer layer. Numerical evidence indicates that the optimal structure is robust with respect to small changes in the grating profile.

  18. Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

    DOE Patents [OSTI]

    Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

    2015-05-26

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

  19. Electron dynamics of the buffer layer and bilayer graphene on SiC

    SciTech Connect (OSTI)

    Shearer, Alex J.; Caplins, Benjamin W.; Suich, David E.; Harris, Charles B., E-mail: cbharris@berkeley.edu [Department of Chemistry, University of California at Berkeley, Berkeley, California 94720 (United States); Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Johns, James E. [Department of Chemistry, University of Minnesota Twin Cities, Minneapolis, Minnesota 55455 (United States); Hersam, Mark C. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-06-09

    Angle- and time-resolved two-photon photoemission (TPPE) was used to investigate electronic states in the buffer layer of 4H-SiC(0001). An image potential state (IPS) series was observed on this strongly surface-bound buffer layer, and dispersion measurements indicated free-electron-like behavior for all states in this series. These results were compared with TPPE taken on bilayer graphene, which also show the existence of a free-electron-like IPS series. Lifetimes for the n?=?2, and n?=?3 states were obtained from time-resolved TPPE; slightly increased lifetimes were observed in the bilayer graphene sample for the n?=?2 the n?=?3 states. Despite the large band gap of graphene at the center of the Brillouin zone, the lifetime results demonstrate that the graphene layers do not behave as a simple tunneling barrier, suggesting that the buffer layer and graphene overlayers play a direct role in the decay of IPS electrons.

  20. V-228: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Users Execute Arbitrary Code | Department of Energy 8: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote Users Execute Arbitrary Code V-228: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote Users Execute Arbitrary Code August 27, 2013 - 6:00am Addthis PROBLEM: Two vulnerabilities were reported in RealPlayer PLATFORM: RealPlayer 16.0.2.32 and prior ABSTRACT: A remote user can cause arbitrary code to be executed on the target user's system REFERENCE LINKS:

  1. Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

    SciTech Connect (OSTI)

    Hultqvist, Adam; Bent, Stacey F.; Li, Jian V.; Kuciauskas, Darius; Dippo, Patricia; Contreras, Miguel A.; Levi, Dean H.

    2015-07-20

    Partial CuInGaSe{sub 2} (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO{sub x} buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.

  2. T-664: Apache Santuario Buffer Overflow Lets Remote Users Deny Service

    Broader source: Energy.gov [DOE]

    A buffer overflow exists when creating or verifying XML signatures with RSA keys of sizes on the order of 8192 or more bits. This typically results in a crash and denial of service in applications that verify signatures using keys that could be supplied by an attacker.

  3. T-527: OpenSC Smart Card Serial Number Multiple Buffer Overflow Vulnerabilities

    Broader source: Energy.gov [DOE]

    OpenSC is prone to multiple buffer-overflow vulnerabilities because the application fails to perform adequate boundary checks on user-supplied input. Attackers may leverage these issues to execute arbitrary code in the context of the application. Failed attacks will cause denial-of-service conditions.

  4. Preparation of CIGS-based solar cells using a buffered electrodeposition bath

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath

    2007-11-20

    A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

  5. Sol-gel deposition of buffer layers on biaxially textured metal substances

    DOE Patents [OSTI]

    Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

    2000-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  6. Growth and micro structural studies on Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) buffer layers

    SciTech Connect (OSTI)

    Srinivas, S.; Bhatnagar, A.K.; Pinto, R.

    1994-12-31

    Microstructure of Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) of radio frequency magnetron sputtered buffer layers was studied at various sputtering conditions on Si<100>, Sapphire and LaAlO{sub 3} <100> substrates. The effect of substrate temperatures upto 800 C and sputtering gas pressures in the range of 50 mTorr. of growth conditions was studied. The buffer layers of YSZ and STO showed a strong tendency for columnar structure with variation growth conditions. The buffer layers of YSZ and STO showed orientation. The tendency for columnar growth was observed above 15 mTorr sputtering gas pressure and at high substrate temperatures. Post annealing of these films in oxygen atmosphere reduced the oxygen deficiency and strain generated during growth of the films. Strong c-axis oriented superconducting YBa{sub 2}Cu{sub 9}O{sub 7-x} (YBCO) thin films were obtained on these buffer layers using pulsed laser ablation technique. YBCO films deposited on multilayers of YSZ and STO were shown to have better superconducting properties.

  7. Selective growth of Pb islands on graphene/SiC buffer layers

    SciTech Connect (OSTI)

    Liu, X. T.; Miao, Y. P.; Ma, D. Y.; Hu, T. W.; Ma, F. E-mail: kwxu@mail.xjtu.edu.cn; Chu, Paul K.; Xu, K. W. E-mail: kwxu@mail.xjtu.edu.cn

    2015-02-14

    Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 6?(3) reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Since Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.

  8. Minimally buffered data transfers between nodes in a data communications network

    DOE Patents [OSTI]

    Miller, Douglas R.

    2015-06-23

    Methods, apparatus, and products for minimally buffered data transfers between nodes in a data communications network are disclosed that include: receiving, by a messaging module on an origin node, a storage identifier, a origin data type, and a target data type, the storage identifier specifying application storage containing data, the origin data type describing a data subset contained in the origin application storage, the target data type describing an arrangement of the data subset in application storage on a target node; creating, by the messaging module, origin metadata describing the origin data type; selecting, by the messaging module from the origin application storage in dependence upon the origin metadata and the storage identifier, the data subset; and transmitting, by the messaging module to the target node, the selected data subset for storing in the target application storage in dependence upon the target data type without temporarily buffering the data subset.

  9. T-562: Novell ZENworks Configuration Management novell-tftp.exe Buffer Overflow

    Broader source: Energy.gov [DOE]

    A vulnerability has been reported in Novell ZENworks Configuration Management, which can be exploited by malicious people to compromise a vulnerable system. The vulnerability is caused due to a boundary error in novell-tftp.exe when parsing requests. This can be exploited to cause a heap-based buffer overflow via a specially crafted request sent to UDP port 69. The vulnerability is reported in versions 10.3.1, 10.3.2, and 11.0.

  10. Scaling nitrogen and carbon interactions: What are the consequences of biological buffering?

    SciTech Connect (OSTI)

    Weston, David J.; Rogers, Alistair; Tschaplinski, Timothy J.; Gunter, Lee E.; Jawdy, Sara A.; Engle, Nancy L.; Heady, Lindsey E.; Tuskan, Gerald A.; Wullschleger, Stan D.

    2015-06-25

    Understanding the consequences of elevated CO2 (eCO2; 800 ppm) on terrestrial ecosystems is a central theme in global change biology, but relatively little is known about how altered plant C and N metabolism influences higher levels of biological organization. Here, we investigate the consequences of C and N interactions by genetically modifying the N-assimilation pathway in Arabidopsis and initiating growth chamber and mesocosm competition studies at current CO2 (cCO2; 400 ppm) and eCO2 over multiple generations. Using a suite of ecological, physiological, and molecular genomic tools, we show that a single-gene mutant of a key enzyme (nia2) elicited a highly orchestrated buffering response starting with a fivefold increase in the expression of a gene paralog (nia1) and a 63% increase in the expression of gene network module enriched for N-assimilation genes. The genetic perturbation reduced amino acids, protein, and TCA-cycle intermediate concentrations in the nia2 mutant compared to the wild-type, while eCO2 mainly increased carbohydrate concentrations. The mutant had reduced net photosynthetic rates due to a 27% decrease in carboxylation capacity and an 18% decrease in electron transport rates. The expression of these buffering mechanisms resulted in a penalty that negatively correlated with fitness and population dynamics yet showed only minor alterations in our estimates of population function, including total per unit area biomass, ground cover, and leaf area index. As a result, this study provides insight into the consequences of buffering mechanisms that occur post-genetic perturbations in the N pathway and the associated outcomes these buffering systems have on plant populations relative to eCO2.

  11. Scaling carbon and nitrogen interactions. What are the consequences of biological buffering?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Weston, David; Rogers, Alistair; Tschaplinski, Timothy J.; Gunter, Lee E; Jawdy, Sara; Engle, Nancy L.; Heady, Lindsey E.; Tuskan, Gerald A.; Wullschleger, Stan D.

    2015-06-25

    Understanding the consequences of elevated CO2 (eCO2; 800 ppm) on terrestrial ecosystems is a central theme in global change biology, but relatively little is known about how altered plant C and N metabolism influences higher levels of biological organization. Here, we investigate the consequences of C and N interactions by genetically modifying the N-assimilation pathway in Arabidopsis and initiating growth chamber and mesocosm competition studies at current CO2 (cCO2; 400 ppm) and eCO2 over multiple generations. Using a suite of ecological, physiological, and molecular genomic tools, we show that a single-gene mutant of a key enzyme (nia2) elicited a highlymore » orchestrated buffering response starting with a fivefold increase in the expression of a gene paralog (nia1) and a 63% increase in the expression of gene network module enriched for N-assimilation genes. The genetic perturbation reduced amino acids, protein, and TCA-cycle intermediate concentrations in the nia2 mutant compared to the wild-type, while eCO2 mainly increased carbohydrate concentrations. The mutant had reduced net photosynthetic rates due to a 27% decrease in carboxylation capacity and an 18% decrease in electron transport rates. The expression of these buffering mechanisms resulted in a penalty that negatively correlated with fitness and population dynamics yet showed only minor alterations in our estimates of population function, including total per unit area biomass, ground cover, and leaf area index. This study provides insight into the consequences of buffering mechanisms that occur post-genetic perturbations in the N pathway and the associated outcomes these buffering systems have on plant populations relative to eCO2.« less

  12. Hafnium nitride buffer layers for growth of GaN on silicon

    DOE Patents [OSTI]

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  13. Photovoltaic devices comprising zinc stannate buffer layer and method for making

    DOE Patents [OSTI]

    Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J.

    2001-01-01

    A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

  14. Scaling carbon and nitrogen interactions. What are the consequences of biological buffering?

    SciTech Connect (OSTI)

    Weston, David; Rogers, Alistair; Tschaplinski, Timothy J.; Gunter, Lee E; Jawdy, Sara; Engle, Nancy L.; Heady, Lindsey E.; Tuskan, Gerald A.; Wullschleger, Stan D.

    2015-06-25

    Understanding the consequences of elevated CO2 (eCO2; 800 ppm) on terrestrial ecosystems is a central theme in global change biology, but relatively little is known about how altered plant C and N metabolism influences higher levels of biological organization. Here, we investigate the consequences of C and N interactions by genetically modifying the N-assimilation pathway in Arabidopsis and initiating growth chamber and mesocosm competition studies at current CO2 (cCO2; 400 ppm) and eCO2 over multiple generations. Using a suite of ecological, physiological, and molecular genomic tools, we show that a single-gene mutant of a key enzyme (nia2) elicited a highly orchestrated buffering response starting with a fivefold increase in the expression of a gene paralog (nia1) and a 63% increase in the expression of gene network module enriched for N-assimilation genes. The genetic perturbation reduced amino acids, protein, and TCA-cycle intermediate concentrations in the nia2 mutant compared to the wild-type, while eCO2 mainly increased carbohydrate concentrations. The mutant had reduced net photosynthetic rates due to a 27% decrease in carboxylation capacity and an 18% decrease in electron transport rates. The expression of these buffering mechanisms resulted in a penalty that negatively correlated with fitness and population dynamics yet showed only minor alterations in our estimates of population function, including total per unit area biomass, ground cover, and leaf area index. This study provides insight into the consequences of buffering mechanisms that occur post-genetic perturbations in the N pathway and the associated outcomes these buffering systems have on plant populations relative to eCO2.

  15. ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.

    2009-11-03

    The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

  16. Scaling nitrogen and carbon interactions: What are the consequences of biological buffering?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Weston, David J.; Rogers, Alistair; Tschaplinski, Timothy J.; Gunter, Lee E.; Jawdy, Sara A.; Engle, Nancy L.; Heady, Lindsey E.; Tuskan, Gerald A.; Wullschleger, Stan D.

    2015-06-25

    Understanding the consequences of elevated CO2 (eCO2; 800 ppm) on terrestrial ecosystems is a central theme in global change biology, but relatively little is known about how altered plant C and N metabolism influences higher levels of biological organization. Here, we investigate the consequences of C and N interactions by genetically modifying the N-assimilation pathway in Arabidopsis and initiating growth chamber and mesocosm competition studies at current CO2 (cCO2; 400 ppm) and eCO2 over multiple generations. Using a suite of ecological, physiological, and molecular genomic tools, we show that a single-gene mutant of a key enzyme (nia2) elicited a highlymore » orchestrated buffering response starting with a fivefold increase in the expression of a gene paralog (nia1) and a 63% increase in the expression of gene network module enriched for N-assimilation genes. The genetic perturbation reduced amino acids, protein, and TCA-cycle intermediate concentrations in the nia2 mutant compared to the wild-type, while eCO2 mainly increased carbohydrate concentrations. The mutant had reduced net photosynthetic rates due to a 27% decrease in carboxylation capacity and an 18% decrease in electron transport rates. The expression of these buffering mechanisms resulted in a penalty that negatively correlated with fitness and population dynamics yet showed only minor alterations in our estimates of population function, including total per unit area biomass, ground cover, and leaf area index. As a result, this study provides insight into the consequences of buffering mechanisms that occur post-genetic perturbations in the N pathway and the associated outcomes these buffering systems have on plant populations relative to eCO2.« less

  17. Evaluation of the Effective Moisture Penetration Depth Model for Estimating Moisture Buffering in Buildings

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Evaluation of the Effective Moisture Penetration Depth Model for Estimating Moisture Buffering in Buildings J. Woods, J. Winkler, and D. Christensen National Renewable Energy Laboratory Technical Report NREL/TP-5500-57441 January 2013 NREL is a national laboratory of the U.S. Department of Energy, Office of Energy Efficiency & Renewable Energy, operated by the Alliance for Sustainable Energy, LLC. National Renewable Energy Laboratory 15013 Denver West Parkway Golden, Colorado 80401

  18. Carbonic anhydrase-facilitated CO2 absorption with polyacrylamide buffering bead capture

    SciTech Connect (OSTI)

    Dilmore, Robert; Griffith, Craid; Liu, Zhu; Soong, Yee; Hedges, Sheila W.; Koepsel, Richard; Ataai, M [Ataai, Mohammad

    2009-07-01

    A novel CO2 separation concept is described wherein the enzyme carbonic anhydrase (CA) is used to increase the overall rate Of CO2 absorption after which hydrated CO2 reacts with regenerable amine-bearing polyacrylamide buffering beads (PABB). Following saturation of the material's immobilized tertiary amines, CA-bearing carrier water is separated and recycled to the absorption stage while CO2-loaded material is thermally regenerated. Process application of this concept would involve operation of two or more columns in parallel with thermal regeneration with low-pressure steam taking place after the capacity of a column of amine-bearing polymeric material was exceeded. PABB CO2- bearing capacity was evaluated by thermogravimetric analysis (TGA) for beads of three acrylamido buffering monomer ingredient concentrations: 0 mol/kg bead, 0.857 mol/kg bead, and 2 mol/kg bead. TGA results demonstrate that CO2- bearing capacity increases with increasing PABB buffering concentration and that up to 78% of the theoretical CO2- bearing capacity was realized in prepared PABB samples (0.857 mol/kg recipe). The highest observed CO2-bearing capacity of PABB was 1.37 mol of CO2 per kg dry bead. TGA was also used to assess the regenerability Of CO2-loaded PABB. Preliminary results suggest that CO2 is partially driven from PABB samples at temperatures as low as 55 degrees C, with complete regeneration occurring at 100 degrees C. Other physical characteristics of PABB are discussed. In addition, the effectiveness of bovine carbonic anhydrase for the catalysis Of CO2 dissolution is evaluated. Potential benefits and drawbacks of the proposed process are discussed. Published by Elsevier Ltd.

  19. Using Whole-House Field Tests to Empirically Derive Moisture Buffering Model Inputs

    SciTech Connect (OSTI)

    Woods, J.; Winkler, J.; Christensen, D.; Hancock, E.

    2014-08-01

    Building energy simulations can be used to predict a building's interior conditions, along with the energy use associated with keeping these conditions comfortable. These models simulate the loads on the building (e.g., internal gains, envelope heat transfer), determine the operation of the space conditioning equipment, and then calculate the building's temperature and humidity throughout the year. The indoor temperature and humidity are affected not only by the loads and the space conditioning equipment, but also by the capacitance of the building materials, which buffer changes in temperature and humidity. This research developed an empirical method to extract whole-house model inputs for use with a more accurate moisture capacitance model (the effective moisture penetration depth model). The experimental approach was to subject the materials in the house to a square-wave relative humidity profile, measure all of the moisture transfer terms (e.g., infiltration, air conditioner condensate) and calculate the only unmeasured term: the moisture absorption into the materials. After validating the method with laboratory measurements, we performed the tests in a field house. A least-squares fit of an analytical solution to the measured moisture absorption curves was used to determine the three independent model parameters representing the moisture buffering potential of this house and its furnishings. Follow on tests with realistic latent and sensible loads showed good agreement with the derived parameters, especially compared to the commonly-used effective capacitance approach. These results show that the EMPD model, once the inputs are known, is an accurate moisture buffering model.

  20. T-556: BMC PATROL Agent Service Daemon stack-based buffer overflow

    Broader source: Energy.gov [DOE]

    Stack-based buffer overflow in BMC PATROL Agent Service Daemon for in Performance Analysis for Servers, Performance Assurance for Servers, and Performance Assurance for Virtual Servers 7.4.00 through 7.5.10; Performance Analyzer and Performance Predictor for Servers 7.4.00 through 7.5.10; and Capacity Management Essentials 1.2.00 (7.4.15) allows remote attackers to execute arbitrary code via a crafted length value in a BGS_MULTIPLE_READS command to TCP port 6768.

  1. Hydrogen responses of ultrathin Pd films and nanowire networks with a Ti buffer layer.

    SciTech Connect (OSTI)

    Zeng, X. Q.; Wang, Y. L.; Xiao, Z. L.; Latimer, M. L.; Xu, T.; Kwok, W. K.

    2012-01-01

    We report on hydrogen responses of ultrathin films and nanowire networks of palladium on titanium buffered silicon substrates and filtration membranes, respectively. We found that in both systems signatures such as retarding responses and saturation of the resistance changes at high hydrogen concentrations associated with the transition from Pd/H solid solution to Pd hydride diminish with decreasing the thickness of the palladium layer from 7 to 2 nm. Our results not only reveal a new way to suppress the phase transition in Pd/H system but also provide an alternative approach to achieve fast and sensitive hydrogen sensors with a wide concentration detection range.

  2. Buffer layers on metal surfaces having biaxial texture as superconductor substrates

    DOE Patents [OSTI]

    Paranthaman, Mariappan (Knoxville, TN); Lee, Dominic F. (Knoxville, TN); Kroeger, Donald M. (Knoxville, TN); Goyal, Amit (Knoxville, TN)

    2000-01-01

    Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /Ni, (RE=Rare Earth), RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /CeO.sub.2 /Ni, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /CeO.sub.2 /Cu, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approaches, which include chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

  3. Calcium manganate: A promising candidate as buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems

    SciTech Connect (OSTI)

    Zhao, Pengjun; Wang, Hongguang; Kong, Wenwen; Xu, Jinbao Wang, Lei; Ren, Wei; Bian, Liang; Chang, Aimin

    2014-11-21

    We have systematically studied the feasibility of CaMnO{sub 3} thin film, an n-type perovskite, to be utilized as the buffer layer for hybrid halide perovskite photovoltaic-thermoelectric device. Locations of the conduction band and the valence band, spontaneous polarization performance, and optical properties were investigated. Results indicate the energy band of CaMnO{sub 3} can match up well with that of CH{sub 3}NH{sub 3}PbI{sub 3} on separating electron-hole pairs. In addition, the consistent polarization angle helps enlarge the open circuit voltage of the composite system. Besides, CaMnO{sub 3} film shows large absorption coefficient and low extinction coefficient under visible irradiation, demonstrating high carrier concentration, which is beneficial to the current density. More importantly, benign thermoelectric properties enable CaMnO{sub 3} film to assimilate phonon vibration from CH{sub 3}NH3PbI{sub 3}. All the above features lead to a bright future of CaMnO{sub 3} film, which can be a promising candidate as a buffer layer for hybrid halide perovskite photovoltaic-thermoelectric systems.

  4. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  5. Photoelectrochemical study of pitting on iron in borate buffer solution containing inhibitor

    SciTech Connect (OSTI)

    Yang, M.; Chen, L.; Cai, S.

    1997-01-01

    The photoelectrochemical behavior and the susceptibility of iron to pitting in borate buffer containing chloride ions (Cl{sup {minus}}) were investigated in the presence and absence of inhibitor PC-604, which is a mixture of polyhydric alcohol phosphoric easter and polyphosphoric ester of various molecular weights. Measurements of the band gap (E{sub g}) of the passive film on iron showed inhibitor concentration and passivation time did not interfere with E{sub g}. Photocurrent and photocurrent transients increased with increasing inhibitor quantities and passivation times at constant potential. The decay time-constant of the photocurrent transient was investigated as a specific parameter of the film. Data showed this parameter was related to pitting susceptibility of the passive film on iron.

  6. ZnO buffer layer for metal films on silicon substrates

    DOE Patents [OSTI]

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  7. Executing scatter operation to parallel computer nodes by repeatedly broadcasting content of send buffer partition corresponding to each node upon bitwise OR operation

    DOE Patents [OSTI]

    Archer, Charles J.; Ratterman, Joseph D.

    2009-11-06

    Executing a scatter operation on a parallel computer includes: configuring a send buffer on a logical root, the send buffer having positions, each position corresponding to a ranked node in an operational group of compute nodes and for storing contents scattered to that ranked node; and repeatedly for each position in the send buffer: broadcasting, by the logical root to each of the other compute nodes on a global combining network, the contents of the current position of the send buffer using a bitwise OR operation, determining, by each compute node, whether the current position in the send buffer corresponds with the rank of that compute node, if the current position corresponds with the rank, receiving the contents and storing the contents in a reception buffer of that compute node, and if the current position does not correspond with the rank, discarding the contents.

  8. Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films

    SciTech Connect (OSTI)

    Hankins, Matthew G.

    2009-10-06

    Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

  9. T-567: Linux Kernel Buffer Overflow in ldm_frag_add() May Let Local Users Gain Elevated Privileges

    Broader source: Energy.gov [DOE]

    A vulnerability was reported in the Linux Kernel. A local user may be able to obtain elevated privileges on the target system. A physically local user can connect a storage device with a specially crafted LDM partition table to trigger a buffer overflow in the ldm_frag_add() function in 'fs/partitions/ldm.c' and potentially execute arbitrary code with elevated privileges.

  10. Evaluation of methods for application of epitaxial buffer and superconductor layers

    SciTech Connect (OSTI)

    1999-03-30

    The recent achievements of critical currents exceeding million amperes per square centimeter at 77K in YBCO deposited over suitably textured substrate have stimulated interest in the potential applications of coated conductors at high temperatures and in high magnetic fields. Currently, ion-beam assisted deposition (IBAD), and rolling assisted bi-axially textured substrate (RABiTS), represent two available options for obtaining textured substrates. For applying suitable coatings of buffer and high temperature superconductor (HTS) material over textured substrates, several options are available which include sputtering, electron-beam evaporation, laser ablation, electrophoresis, chemical vapor deposition (including metal organics chemical vapor deposition), sol-gel, metal organics decomposition, electrodeposition and aerosol/spray pyrolysis. A commercial continuous long-length wire/tape manufacturing scheme developed out of any suitable combination of the above techniques would consist of operations involving preparation of the substrate and application of buffer, HTS and passivation/insulation materials and special treatment steps such as post-annealing. These operations can be effected by various process parameters that can be classified into chemistry, materials, engineering and environmental related parameters. Under the DOE-sponsored program, to carry out an engineering evaluation, first, the process flow schemes were developed for various candidate options identifying the major operating steps, process conditions, and process streams. Next, to evaluate quantifiable parameters such as process severity (e.g. temperature and pressure), coating thickness and deposition rate for HTS material, achieved maximum J{sub c} value (for films >1{micro}m thick) and cost of chemical and material utilization efficiency, the multi-attribute method was used to determine attributes/merits for various parameters and candidate options. To determine similar attribute values for the

  11. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    SciTech Connect (OSTI)

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U.; Bergsten, J.; Rorsman, N.

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  12. Determination of effective axion masses in the helium-3 buffer of CAST

    SciTech Connect (OSTI)

    Ruz, J

    2011-11-18

    The CERN Axion Solar Telescope (CAST) is a ground based experiment located in Geneva (Switzerland) searching for axions coming from the Sun. Axions, hypothetical particles that not only could solve the strong CP problem but also be one of the favored candidates for dark matter, can be produced in the core of the Sun via the Primakoff effect. They can be reconverted into X-ray photons on Earth in the presence of strong electromagnetic fields. In order to look for axions, CAST points a decommissioned LHC prototype dipole magnet with different X-ray detectors installed in both ends of the magnet towards the Sun. The analysis of the data acquired during the first phase of the experiment yielded the most restrictive experimental upper limit on the axion-to-photon coupling constant for axion masses up to about 0.02 eV/c{sup 2}. During the second phase, CAST extends its mass sensitivity by tuning the electron density present in the magnetic field region. Injecting precise amounts of helium gas has enabled CAST to look for axion masses up to 1.2 eV/c{sup 2}. This paper studies the determination of the effective axion masses scanned at CAST during its second phase. The use of a helium gas buffer at temperatures of 1.8 K has required a detailed knowledge of the gas density distribution. Complete sets of computational fluid dynamic simulations validated with experimental data have been crucial to obtain accurate results.

  13. Investigations into alterntive substrate, absorber, and buffer layer processing for Cu(In,Ga)Se{sub 2}-based solar cells

    SciTech Connect (OSTI)

    Tuttle, J.R.; Berens, T.A.; Keane, J.

    1996-05-01

    High-performance Cu(In,Ga)Se{sub 2}(CIGS)-based solar cells are presently fabricated within a narrow range of processing options. In this contribution, alternative substrate, absorber, and buffer layer processing is considered. Cell performance varies considerably when alternative substrates are employed. These variations are narrowed with the addition of Na via a Na{sub 2}S compound. Sputtered and electrodeposited CIGS precursors and completed absorbers show promise as alternatives to evaporation. A recrystallization process is required to improve their quality. (In,Ga){sub y}Se buffer layers contribute to cell performance above 10. Further improvements in these alternatives will lead to combined cell performance greater than 10% in the near term.

  14. {sup 137}Cs sorption into bentonite from Cidadap-Tasikmalaya as buffer material for disposal demonstration plant facility at Serpong

    SciTech Connect (OSTI)

    Setiawan, B. Sriwahyuni, H. Ekaningrum, NE. Sumantry, T.

    2014-03-24

    According to co-location principle, near surface disposal type the disposal demonstration plant facility will be build at Serpong nuclear area. The facility also for anticipation of future needs to provide national facility for the servicing of radwaste management of non-nuclear power plant activity in Serpong Nuclear Area. It is needs to study the material of buffer and backfill for the safety of demonstration plant facility. A local bentonite rock from Cidadap-Tasikmalaya was used as the buffer materials. Objective of experiment is to find out the specific data of sorption characteristic of Cidadap bentonite as buffer material in a radwaste disposal system. Experiments were performed in batch method, where bentonite samples were contacted with CsCl solution labeled with Cs-137 in 100 ml/g liquid:solid ratio. Initial Cs concentration was 10{sup −8} M and to study the effects of ionic strength and Cs concentration in solution, 0.1 and 1.0 M NaCl also CsCl concentration ranging 10{sup −8} - 10{sup −4} M were added in solution. As the indicator of Cs saturated in bentonite samples, Kd value was applied. Affected parameters in the experiment were contact time, effects of ionic strength and concentration of CsCl. Results showed that sorption of Cs by bentonite reached constantly after 16 days contacted, and Kd value was 10.600 ml/g. Effect of CsCl concentration on Kd value may decreased in increased in CsCl concentration. Effect of ionic strength increased according to increased in concentration of background and would effect to Kd value due to competition of Na ions and Cs in solution interacts with bentonite. By obtaining the bentonite character data as buffer material, the results could be used as the basis for making of design and the basic of performance assessment the near surface disposal facility in terms of isolation capacity of radwaste later.

  15. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect (OSTI)

    Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1; Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 ; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.; Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7; Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7

    2013-09-21

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  16. Growth modes of InN(000-1) on GaN buffer layers on sapphire

    SciTech Connect (OSTI)

    Liu, Bing; Kitajima, Takeshi; Chen, Dongxue; Leone, Stephen R.

    2005-01-24

    In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesa-like with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered.

  17. Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

    SciTech Connect (OSTI)

    Nandi, R. Mohan, S. Major, S. S.; Srinivasa, R. S.

    2014-04-24

    ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

  18. T-559: Stack-based buffer overflow in oninit in IBM Informix Dynamic Server (IDS) 11.50 allows remote execution

    Broader source: Energy.gov [DOE]

    Stack-based buffer overflow in oninit in IBM Informix Dynamic Server (IDS) 11.50 allows remote execution attackers to execute arbitrary code via crafted arguments in the USELASTCOMMITTED session environment option in a SQL SET ENVIRONMENT statement

  19. Production of cold beams of ND{sub 3} with variable rotational state distributions by electrostatic extraction of He and Ne buffer-gas-cooled beams

    SciTech Connect (OSTI)

    Twyman, Kathryn S.; Bell, Martin T.; Heazlewood, Brianna R.; Softley, Timothy P.

    2014-07-14

    The measurement of the rotational state distribution of a velocity-selected, buffer-gas-cooled beam of ND{sub 3} is described. In an apparatus recently constructed to study cold ion-molecule collisions, the ND{sub 3} beam is extracted from a cryogenically cooled buffer-gas cell using a 2.15 m long electrostatic quadrupole guide with three 90 bends. (2+1) resonance enhanced multiphoton ionization spectra of molecules exiting the guide show that beams of ND{sub 3} can be produced with rotational state populations corresponding to approximately T{sub rot} = 918 K, achieved through manipulation of the temperature of the buffer-gas cell (operated at 6 K or 17 K), the identity of the buffer gas (He or Ne), or the relative densities of the buffer gas and ND{sub 3}. The translational temperature of the guided ND{sub 3} is found to be similar in a 6 K helium and 17 K neon buffer-gas cell (peak kinetic energies of 6.92(0.13) K and 5.90(0.01) K, respectively). The characterization of this cold-molecule source provides an opportunity for the first experimental investigations into the rotational dependence of reaction cross sections in low temperature collisions.

  20. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  1. Parallel log structured file system collective buffering to achieve a compact representation of scientific and/or dimensional data

    DOE Patents [OSTI]

    Grider, Gary A.; Poole, Stephen W.

    2015-09-01

    Collective buffering and data pattern solutions are provided for storage, retrieval, and/or analysis of data in a collective parallel processing environment. For example, a method can be provided for data storage in a collective parallel processing environment. The method comprises receiving data to be written for a plurality of collective processes within a collective parallel processing environment, extracting a data pattern for the data to be written for the plurality of collective processes, generating a representation describing the data pattern, and saving the data and the representation.

  2. Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Man, Michael K. L.; Deckoff-Jones, Skylar; Winchester, Andrew; Shi, Guangsha; Gupta, Gautam; Mohite, Aditya D.; Kar, Swastik; Kioupakis, Emmanouil; Talapatra, Saikat; Dani, Keshav M.

    2016-02-12

    Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key properties when placed on a substrate like silicon, including quenching of photoluminescence, distorted crystalline structure, and rough surface morphology. The ability to protect these properties of monolayer TMDs, such as molybdenum disulfide (MoS2), on standard Si-based substrates, will enable their use in opto-electronic devices and scientific investigations. Here we show that an atomically thin buffer layer of hexagonal-boron nitride (hBN) protects the rangemore » of key opto-electronic, structural, and morphological properties of monolayer MoS2 on Si-based substrates. The hBN buffer restores sharp diffraction patterns, improves monolayer flatness by nearly two-orders of magnitude, and causes over an order of magnitude enhancement in photoluminescence, compared to bare Si and SiO2 substrates. Lastly, our demonstration provides a way of integrating MoS2 and other 2D monolayers onto standard Si-substrates, thus furthering their technological applications and scientific investigations.« less

  3. EXAMINATION OF DISLOCATIONS IN LATTICE-MISMATCHED GaInAs/BUFFER LAYER/GaAs FOR III-V PHOTOVOLTAICS

    SciTech Connect (OSTI)

    Levander, A.; Geisz, J.

    2007-01-01

    Dislocations act as sites for nonradiative electron/hole pair recombination, which reduces the effi ciency of photovoltaics. Lattice-matched materials can be grown on top of one another without forming a high density of dislocations. However, when the growth of lattice-mismatched (LMM) materials is attempted, many dislocations result from the relaxation of strain in the crystal structure. In an attempt to reduce the number of dislocations that propagate into a solar device when using LMM materials, a compositionally step-graded buffer is placed between the two LMM materials. In order to confi ne the dislocations to the buffer layer and therefore increase material quality and device effi ciency, the growth temperature and thickness of the buffer layer were varied. A GaInP compositionally graded buffer and GaInAs p-n junction were grown on a GaAs substrate in a metal-organic chemical vapor deposition (MOCVD) system. A multibeam optical stress sensor (MOSS) and X-ray diffraction (XRD) were used to characterize the strain in the epilayers. Electrical and optoelectronic properties were measured using a probe station and multimeter setup, solar simulator, and a quantum effi ciency instrument. It was determined that device functionality was highly dependent on the growth temperature of the graded buffer. As growth temperature increased, so did the dislocation density in the device despite an increase in the dislocation velocity, which should have increased the dislocation annihilation rate and the diffusion of dislocations to the edge of the crystal. The thickness of the graded buffer also affected device effi ciency with thinner samples performing poorly. The thinner graded buffer layers had high internal resistances from reduced carrier concentrations. In terms of effi ciency, the empirically derived recipe developed by the scientists at the National Renewable Energy Laboratory (NREL) produced the highest quality cells.

  4. Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency

    SciTech Connect (OSTI)

    Cerio, Frank

    2013-09-14

    The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm{sup 2} using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance

  5. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas; Kawakami, Roland K.

    2016-04-27

    Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  6. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  7. Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer

    SciTech Connect (OSTI)

    Son, Seokki; Choi, Moonseok; Kim, Dohyung; Choi, Changhwan; Yu, Sunmoon

    2015-01-12

    We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al{sub 2}O{sub 3} onto exfoliated molybdenum disulfide (MoS{sub 2}) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS{sub 2} by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al{sub 2}O{sub 3}. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al{sub 2}O{sub 3}/MoS{sub 2} interface, but also leaves MoS{sub 2} intact.

  8. Effect of dopent on the structural and optical properties of ZnS thin film as a buffer layer in solar cell application

    SciTech Connect (OSTI)

    Vashistha, Indu B. Sharma, S. K.; Sharma, Mahesh C.; Sharma, Ramphal

    2015-08-28

    In order to find the suitable alternative of toxic CdS buffer layer, deposition of pure ZnS and doped with Al by chemical bath deposition method have been reported. Further as grown pure and doped thin films have been annealed at 150°C. The structural and surface morphological properties have been characterized by X-Ray diffraction (XRD) and Atomic Force Microscope (AFM).The XRD analysis shows that annealed thin film has been polycrystalline in nature with sphalerite cubic crystal structure and AFM images indicate increment in grain size as well as growth of crystals after annealing. Optical measurement data give band gap of 3.5 eV which is ideal band gap for buffer layer for solar cell suggesting that the obtained ZnS buffer layer is suitable in a low-cost solar cell.

  9. Laser imprint reduction for the critical-density foam buffered target driven by a relatively strong foot pulse at early stage of laser implosions

    SciTech Connect (OSTI)

    Li, J. W. He, X. T.; Kang, W.; Li, J. H.; Zheng, W. D.

    2015-12-15

    In order to reduce the effect of laser imprint in direct-drive ignition scheme a low-density foam buffered target has been proposed. This target is driven by a laser pulse with a low-intensity foot at the early stage of implosion, which heats the foam and elongates the thermal conduction zone between the laser absorption region and ablation front, increasing the thermal smoothing effect. In this paper, a relatively strong foot pulse is adopted to irradiate the critical-density foam buffered target. The stronger foot, near 1 × 10{sup 14 }W/cm{sup 2}, is able to drive a radiative shock in the low-density foam, which helps smooth the shock and further reduce the effect of laser imprint. The radiative shock also forms a double ablation front structure between the two ablation fronts to further stabilize the hydrodynamics, achieving the similar results to a target with a high-Z dopant in the ablator. 2D analysis shows that for the critical-density foam buffered target irradiated by the strong foot pulse, the laser imprint can be reduced due to the radiative shock in the foam and an increased thermal smoothing effect. It seems viable for the critical-density foam buffered target to be driven by a relatively strong foot pulse with the goal of reducing the laser imprint and achieving better implosion symmetry in the direct-drive laser fusion.

  10. Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Brubaker, Matt D.; Rourke, Devin M.; Sanford, Norman A.; Bertness, Kris A.; Bright, Victor M.

    2011-09-01

    Low-temperature AlN buffer layers grown via plasma-assisted molecular beam epitaxy on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions, with their size, shape, and tilt determined by the AlN V/III flux ratio. GaN nanowires were frequently observed to adopt the structural characteristics of the underlying AlN columns, including the size and the degree of tilt. Piezoresponse force microscopy and polarity-sensitive etching indicate that the AlN films and the protruding columns have a mixed crystallographic polarity. Convergent beam electron diffraction indicates that GaN nanowires are Ga-polar, suggesting that Al-polar columns are nanowire nucleation sites for Ga-polar nanowires. GaN nanowires of low density could be grown on AlN buffers that were predominantly N-polar with isolated Al-polar columns, indicating a high growth rate for Ga-polar nanowires and suppressed growth of N-polar nanowires under typical growth conditions. AlN buffer layers grown under slightly N-rich conditions (V/III flux ratio = 1.0 to 1.3) were found to provide a favorable growth surface for low-density, coalescence-free nanowires.

  11. System and method for implementing periodic early discard in on-chip buffer memories of network elements

    DOE Patents [OSTI]

    Francini, Andrea

    2013-05-14

    An advance is made over the prior art in accordance with the principles of the present invention that is directed to a new approach for a system and method for a buffer management scheme called Periodic Early Discard (PED). The invention builds on the observation that, in presence of TCP traffic, the length of a queue can be stabilized by selection of an appropriate frequency for packet dropping. For any combination of number of TCP connections and distribution of the respective RTT values, there exists an ideal packet drop frequency that prevents the queue from over-flowing or under-flowing. While the value of the ideal packet drop frequency may quickly change over time and is sensitive to the series of TCP connections affected by past packet losses, and most of all is impossible to compute inline, it is possible to approximate it with a margin of error that allows keeping the queue occupancy within a pre-defined range for extended periods of time. The PED scheme aims at tracking the (unknown) ideal packet drop frequency, adjusting the approximated value based on the evolution of the queue occupancy, with corrections of the approximated packet drop frequency that occur at a timescale that is comparable to the aggregate time constant of the set of TCP connections that traverse the queue.

  12. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    SciTech Connect (OSTI)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

    2014-09-15

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300?nm GaN/ 200?nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8??10{sup 12} to 2.1 10{sup 13} cm{sup ?2} as the AlN barrier thickness increased from 2.2 to 4.5?nm, while a 4.5?nm AlN barrier would result to 3.1??10{sup 13} cm{sup ?2} on a GaN buffer layer. The 3.0?nm AlN barrier structure exhibited the highest 2DEG mobility of 900?cm{sup 2}/Vs for a density of 1.3??10{sup 13} cm{sup ?2}. The results were also confirmed by the performance of 1??m gate-length transistors. The scaling of AlN barrier thickness from 1.5?nm to 4.5?nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63?A/mm. The maximum drain-source current was 1.1?A/mm for AlN barrier thickness of 3.0?nm and 3.7?nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0?nm AlN barrier.

  13. Enhanced photocatalytic efficiency in zirconia buffered n-NiO/p-NiO single crystalline heterostructures by nanosecond laser treatment

    SciTech Connect (OSTI)

    Molaei, R.; Bayati, M. R.; Alipour, H. M.; Nori, S.; Narayan, J.

    2013-06-21

    We report the formation of NiO based single crystalline p-n junctions with enhanced photocatalytic activity induced by pulsed laser irradiation. The NiO epilayers were grown on Si(001) substrates buffered with cubic yttria-stabilized zirconia (c-YSZ) by using pulsed laser deposition. The NiO/c-YSZ/Si heterostructures were subsequently laser treated by 5 pulses of KrF excimer laser (pulse duration = 25 Multiplication-Sign 10{sup -9} s) at lower energies. Microstructural studies, conducted by X-ray diffraction ({theta}-2{theta} and {phi} techniques) and high resolution transmission electron microscope, showed a cube-on-cube epitaxial relationship at the c-YSZ/Si interface; the epitaxial relationship across the NiO/c-YSZ interface was established as NiO<111 > Double-Vertical-Line Double-Vertical-Line c-YSZ<001> and in-plane NiO<110> Double-Vertical-Line Double-Vertical-Line c-YSZ<100>. Electron microscopy studies showed that the interface between the laser annealed and the pristine region as well as the NiO/c-YSZ interface was atomically sharp and crystallographically continuous. The formation of point defects, namely oxygen vacancies and NiO, due to the coupling of the laser photons with the NiO epilayers was confirmed by XPS. The p-type electrical characteristics of the pristine NiO epilayers turned to an n-type behavior and the electrical conductivity was increased by one order of magnitude after laser treatment. Photocatalytic activity of the pristine (p-NiO/c-YSZ/Si) and the laser-annealed (n-NiO/p-NiO/c-YSZ/Si) heterostructures were assessed by measuring the decomposition rate of 4-chlorophenol under UV light. The photocatalytic reaction rate constants were determined to be 0.0059 and 0.0092 min{sup -1} for the as-deposited and the laser-treated samples, respectively. The enhanced photocatalytic efficiency was attributed to the suppressed charge carrier recombination in the NiO based p-n junctions and higher electrical conductivity. Besides, the oxygen vacancies

  14. Dream controller

    SciTech Connect (OSTI)

    Cheng, George Shu-Xing; Mulkey, Steven L; Wang, Qiang; Chow, Andrew J

    2013-11-26

    A method and apparatus for intelligently controlling continuous process variables. A Dream Controller comprises an Intelligent Engine mechanism and a number of Model-Free Adaptive (MFA) controllers, each of which is suitable to control a process with specific behaviors. The Intelligent Engine can automatically select the appropriate MFA controller and its parameters so that the Dream Controller can be easily used by people with limited control experience and those who do not have the time to commission, tune, and maintain automatic controllers.

  15. Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructure on Si(111)

    SciTech Connect (OSTI)

    Chowdhury, Subhra; Biswas, Dhrubes

    2015-02-23

    This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600?nm, 400?nm, and 200?nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5?nm, In{sub 0.17}Al{sub 0.83}N1.25?nm, GaN1.5?nm, In{sub 0.17}Al{sub 0.83}N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 10{sup 10?}cm{sup ?2} to 10{sup 8?}cm{sup ?2} with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure. Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89?nm, 1.2?nm, and 1.45?nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs.

  16. DEVICE CONTROLLER, CAMERA CONTROL

    Energy Science and Technology Software Center (OSTI)

    1998-07-20

    This is a C++ application that is the server for the cameral control system. Devserv drives serial devices, such as cameras and videoswitchers used in a videoconference, upon request from a client such as the camxfgbfbx ccint program. cc Deverv listens on UPD ports for clients to make network contractions. After a client connects and sends a request to control a device (such as to pan,tilt, or zooma camera or do picture-in-picture with a videoswitcher),more » devserv formats the request into an RS232 message appropriate for the device and sends this message over the serial port to which the device is connected. Devserv then reads the reply from the device from the serial port to which the device is connected. Devserv then reads the reply from the device from the serial port and then formats and sends via multicast a status message. In addition, devserv periodically multicasts status or description messages so that all clients connected to the multicast channel know what devices are supported and their ranges of motion and the current position. The software design employs a class hierarchy such that an abstract base class for devices can be subclassed into classes for various device categories(e.g. sonyevid30, cononvco4, panasonicwjmx50, etc.). which are further subclassed into classes for various device categories. The devices currently supported are the Sony evi-D30, Canon, VCC1, Canon VCC3, and Canon VCC4 cameras and the Panasonic WJ-MX50 videoswitcher. However, developers can extend the class hierarchy to support other devices.« less

  17. Stormwater Controls

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stormwater Controls Stormwater Controls Originally built to provide drinking water, the Los Alamos Canyon Reservoir now serves to keep flow at safe levels and slow down flood ...

  18. Temperature and pressure shift of the Cs clock transition in the presence of buffer gases: Ne, N{sub 2}, Ar

    SciTech Connect (OSTI)

    Kozlova, Olga; Guerandel, Stephane; Clercq, Emeric de

    2011-06-15

    The ground-state hyperfine resonance line of alkali-metal atoms is frequency shifted in the presence of noble or molecular gases. The buffer gases used in vapor-cell atomic clocks thus induce a temperature-dependent shift of the clock transition frequency. We report on measurements of the pressure and temperature dependence of the Cs clock transition frequency in the presence of Ne, Ar, and N{sub 2} buffer gases. The pressure in the sealed glass vapor cells is measured by means of the shift of the Cs D{sub 1} line. We have also investigated the temperature dependence of the optical shift. From these measurements, we infer the pressure and temperature coefficients of the hyperfine frequency shift. It is then possible to predetermine gas mixture ratios that cancel the temperature sensitivity at a given temperature. This prediction is confirmed experimentally for Ar-N{sub 2} mixtures. These results can be useful for improving the long-term frequency stability of Cs vapor-cell clocks.

  19. Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

    SciTech Connect (OSTI)

    Fedorenko, Y. G. Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K.

    2015-10-28

    By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.

  20. PWM Inverter control and the application thereof within electric vehicles

    DOE Patents [OSTI]

    Geppert, Steven

    1982-01-01

    An inverter (34) which provides power to an A.C. machine (28) is controlled by a circuit (36) employing PWM control strategy whereby A.C. power is supplied to the machine at a preselectable frequency and preselectable voltage. This is accomplished by the technique of waveform notching in which the shapes of the notches are varied to determine the average energy content of the overall waveform. Through this arrangement, the operational efficiency of the A.C. machine is optimized. The control circuit includes a micro-computer and memory element which receive various parametric inputs and calculate optimized machine control data signals therefrom. The control data is asynchronously loaded into the inverter through an intermediate buffer (38). In its preferred embodiment, the present invention is incorporated within an electric vehicle (10) employing a 144 VDC battery pack (32) and a three-phase induction motor (18).

  1. Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

    SciTech Connect (OSTI)

    Mitchel, W. C. Haugan, H. J.; Mou, Shin; Brown, G. J.; Elhamri, S.; Berney, R.

    2015-09-15

    Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overall mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers.

  2. Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

    SciTech Connect (OSTI)

    Lupina, L.; Zoellner, M. H.; Dietrich, B.; Capellini, G.; Niermann, T.; Lehmann, M.; Thapa, S. B.; Haeberlen, M.; Storck, P.; Schroeder, T.

    2015-11-16

    We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.

  3. Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

    SciTech Connect (OSTI)

    Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha; Louis, Godfrey; Vijayakumar, K. P.; Kumar, K. Rajeev

    2015-06-24

    In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin film solar cells.

  4. Stormwater Controls

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stormwater Controls Stormwater Controls Originally built to provide drinking water, the Los Alamos Canyon Reservoir now serves to keep flow at safe levels and slow down flood impacts. August 1, 2013 Los Alamos Canyon Reservoir Los Alamos Canyon Reservoir

  5. Project Controls

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1997-03-28

    Project controls are systems used to plan, schedule, budget, and measure the performance of a project/program. The cost estimation package is one of the documents that is used to establish the baseline for project controls. This chapter gives a brief description of project controls and the role the cost estimation package plays.

  6. Influence of the finite linewidth of the laser radiation spectrum on the shape of the coherent population trapping resonance line in an optically dense medium with a buffer gas

    SciTech Connect (OSTI)

    Barantsev, K. A. Popov, E. N.; Litvinov, A. N.

    2015-11-15

    The theory of coherent population trapping resonance is developed for the finite linewidth of the laser radiation spectrum in an optically dense medium of Λ atoms in a cell with a buffer gas. Equations are derived for the atomic density matrix and laser emission spectrum transfer in a cell with working and buffer gases at a finite temperature. The dependence of the quality factor of coherent population trapping resonance on the linewidth of the laser radiation spectrum is studied by measuring transmitted radiation and fluorescence signals.

  7. Radiological Control

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2009-06-16

    The Department of Energy (DOE) has developed this Standard to assist line managers in meeting their responsibilities for implementing occupational radiological control programs.

  8. Enhanced electrical and magnetic properties in La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films deposited on CaTiO{sub 3}-buffered silicon substrates

    SciTech Connect (OSTI)

    Adamo, C.; Méchin, L.; Guillet, B.; Wu, S.; Routoure, J.-M.; Heeg, T.; Katz, M.; Pan, X. Q.; Mercone, S.; Schubert, J.; Zander, W.; Misra, R.; Schiffer, P.; and others

    2015-06-01

    We investigate the suitability of an epitaxial CaTiO{sub 3} buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La{sub 0.7}Sr{sub 0.3}MnO{sub 3} with silicon. The magnetic and electrical properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films deposited by MBE on CaTiO{sub 3}-buffered silicon (CaTiO{sub 3}/Si) are compared with those deposited on SrTiO{sub 3}-buffered silicon (SrTiO{sub 3}/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO{sub 3} buffer layer. These results are relevant to device applications of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films on silicon substrates.

  9. CONTROL ROD

    DOE Patents [OSTI]

    Walker, D.E.; Matras, S.

    1963-04-30

    This patent shows a method of making a fuel or control rod for a nuclear reactor. Fuel or control material is placed within a tube and plugs of porous metal wool are inserted at both ends. The metal wool is then compacted and the tube compressed around it as by swaging, thereby making the plugs liquid- impervious but gas-pervious. (AEC)

  10. Power-dependent microwave properties of superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} films on buffered polycrystalline substrates

    SciTech Connect (OSTI)

    Findikoglu, A.T.; Arendt, P.N.; Foltyn, S.R.; Groves, J.R.; Jia, Q.X.; Peterson, E.J.; Bulaevskii, L.; Maley, M.P.; Reagor, D.W.

    1997-06-01

    We have studied the microwave properties of 0.4 {mu}m thick YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO) films on polycrystalline substrates with ion-beam-assisted-deposited yttria-stabilized zirconia buffer layers using a parallel-plate resonator technique at 10 GHz. The YBCO films with similar in-plane texture grown on both forsterite and Ni-based alloy substrates show similar microwave properties. We measure low-power surface resistance R{sub s} values of about 0.5 m{Omega} at 76 K and 0.15 m{Omega} at 4 K for films with an in-plane mosaic spread of about 7{degree}. Single-tone power-dependence measurements show that the surface resistance and the surface reactance increase linearly and by the same amount with increasing microwave field level. At intermediate power levels, the intermodulation measurements show odd-order intermodulation products that increase quadratically with two-tone input power. These results indicate a hysteretic vortex penetration mechanism in the weak links as the most plausible source of the observed nonlinearities in these films. {copyright} {ital 1997 American Institute of Physics.}

  11. Epitaxial c-axis oriented BaTiO{sub 3} thin films on SrTiO{sub 3}-buffered Si(001) by atomic layer deposition

    SciTech Connect (OSTI)

    Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G., E-mail: ekerdt@che.utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Posadas, Agham B.; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States); Hu, Chengqing; Yu, Edward T. [Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Bruley, John [IBM Research Division, Yorktown Heights, New York 10593 (United States)

    2014-02-24

    Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO{sub 3} (BTO) on Si(001) using a thin (1.6?nm) buffer layer of SrTiO{sub 3} (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225??C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600??C. Two-dimensional XRD confirms the tetragonal structure and orientation of 720-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 720?nm-thick BTO films are examined and show an effective dielectric constant of ?660 for the heterostructure.

  12. Structural characterisation of BaTiO{sub 3} thin films deposited on SrRuO{sub 3}/YSZ buffered silicon substrates and silicon microcantilevers

    SciTech Connect (OSTI)

    Colder, H.; Jorel, C. Mchin, L.; Domengs, B.; Marie, P.; Boisserie, M.; Guillon, S.; Nicu, L.; Galdi, A.

    2014-02-07

    We report on the progress towards an all epitaxial oxide layer technology on silicon substrates for epitaxial piezoelectric microelectromechanical systems. (101)-oriented epitaxial tetragonal BaTiO{sub 3} (BTO) thin films were deposited at two different oxygen pressures, 5.10{sup ?2} mbar and 5.10{sup ?3} mbar, on SrRuO{sub 3}/Yttria-stabilized zirconia (YSZ) buffered silicon substrates by pulsed laser deposition. The YSZ layer full (001) orientation allowed the further growth of a fully (110)-oriented conductive SrRuO{sub 3} electrode as shown by X-ray diffraction. The tetragonal structure of the BTO films, which is a prerequisite for the piezoelectric effect, was identified by Raman spectroscopy. In the BTO film deposited at 5.10{sup ?2} mbar strain was mostly localized inside the BTO grains whereas at 5.10{sup ?3} mbar, it was localized at the grain boundaries. The BTO/SRO/YSZ layers were finally deposited on Si microcantilevers at an O{sub 2} pressure of 5.10{sup ?3} mbar. The strain level was low enough to evaluate the BTO Young modulus. Transmission electron microscopy (TEM) was used to investigate the epitaxial quality of the layers and their epitaxial relationship on plain silicon wafers as well as on released microcantilevers, thanks to Focused-Ion-Beam TEM lamella preparation.

  13. In situ preparation and transport properties of YBa sub 2 Cu sub 3 O sub 7 films on sapphire with Zr(Y)O sub 2 buffer layers

    SciTech Connect (OSTI)

    Adrian, G.; Grabe, G.; Wilkens, W. ); Adrian, H.; Huth, M.; Walkenhorst, A. )

    1991-12-01

    YBa{sub 2}Cu{sub 3}O{sub 7} films on sapphire substrates prepared by laser ablation show {ital c}-axis-oriented growth and critical temperatures as high as {ital T}{sub {ital c}}({ital R}=0)=90 K. Due to diffusion processes and the formation of a nonsuperconducting intermediate layer the critical current density {ital J}{sub {ital c}} is comparatively low. To overcome these difficulties the sapphire substrates were covered by Zr(Y)O{sub 2} films acting as diffusion barriers. The preparation of these films was performed by laser ablation using a multitarget system. The structure and the surfaces of the films were characterized by x-ray diffraction and scanning electron microscopy, respectively. The transport properties of the superconductor films are similar to those on suited substrates. Critical current densities up to {ital J}{sub {ital c}} (77 K)=5{times}10{sup 5} A/cm{sup 2} were achieved. In order to gain information about the pinning mechanisms measurements of the dependencies of {ital J}{sub {ital c}} on the orientation between the crystal {ital c} axis and the external magnetic fields were carried out using samples with different buffer layer thicknesses. From the received data no indication of pinning by point defects in addition to the intrinsic planar pinning mechanism was detected.

  14. Ambient CdCl{sub 2} treatment on CdS buffer layer for improved performance of Sb{sub 2}Se{sub 3} thin film photovoltaics

    SciTech Connect (OSTI)

    Wang, Liang; Luo, Miao; Qin, Sikai; Liu, Xinsheng; Chen, Jie; Yang, Bo; Leng, Meiying; Xue, Ding-Jiang; Zhou, Ying; Gao, Liang; Song, Haisheng; Tang, Jiang

    2015-10-05

    Antimony selenide (Sb{sub 2}Se{sub 3}) is appealing as a promising light absorber because of its intrinsically benign grain boundaries, suitable band gap (∼1.1 eV), strong absorption coefficient, and relatively environmentally friendly constituents. Recently, we achieved a certified 5.6% efficiency Sb{sub 2}Se{sub 3} thin film solar cell with the assistance of ambient CdCl{sub 2} treatment on the CdS buffer layer. Here, we focused on investigating the underlying mechanism from a combined materials and device physics perspective applying current density-voltage (J-V) fitting analysis, atomic force microscope, X-ray photoelectron spectroscopy, fluorescence, and UV–Vis transmission spectroscopy. Our results indicated that ambient CdCl{sub 2} treatment on CdS film not only improved CdS grain size and quality, but also incorporated Cl and more O into the film, both of which can significantly improve the heterojunction quality and device performance of CdS/Sb{sub 2}Se{sub 3} solar cells.

  15. Radiological Control

    National Nuclear Security Administration (NNSA)

    RADIOLOGICAL CONTROL U.S. Department of Energy SAFT Washington, D.C. 20585 DISTRIBUTION ... DOE-STD-1098-2008 ii This document is available on the Department of Energy Technical ...

  16. CONTROL ROD

    DOE Patents [OSTI]

    Zinn, W.H.; Ross, H.V.

    1958-11-18

    A control rod is described for a nuclear reactor. In certaln reactor designs it becomes desirable to use a control rod having great width but relatively llttle thickness. This patent is addressed to such a need. The neutron absorbing material is inserted in a triangular tube, leaving volds between the circular insert and the corners of the triangular tube. The material is positioned within the tube by the use of dummy spacers to achleve the desired absorption pattern, then the ends of the tubes are sealed with suitable plugs. The tubes may be welded or soldered together to form two flat surfaces of any desired width, and covered with sheetmetal to protect the tubes from damage. This design provides a control member that will not distort under the action of outside forces or be ruptured by gases generated within the jacketed control member.

  17. REACTOR CONTROL

    DOE Patents [OSTI]

    Fortescue, P.; Nicoll, D.

    1962-04-24

    A control system employed with a high pressure gas cooled reactor in which a control rod is positioned for upward and downward movement into the neutron field from a position beneath the reactor is described. The control rod is positioned by a coupled piston cylinder releasably coupled to a power drive means and the pressurized coolant is directed against the lower side of the piston. The coolant pressure is offset by a higher fiuid pressure applied to the upper surface of the piston and means are provided for releasing the higher pressure on the upper side of the piston so that the pressure of the coolant drives the piston upwardly, forcing the coupled control rod into the ncutron field of the reactor. (AEC)

  18. CONTROL SYSTEM

    DOE Patents [OSTI]

    Shannon, R.H.; Williamson, H.E.

    1962-10-30

    A boiling water type nuclear reactor power system having improved means of control is described. These means include provisions for either heating the coolant-moderator prior to entry into the reactor or shunting the coolantmoderator around the heating means in response to the demand from the heat engine. These provisions are in addition to means for withdrawing the control rods from the reactor. (AEC)

  19. Environmental Evaluation for Installation of Solar Arrays at San Jose/Santa Clara Water Pollution Control Plant

    Office of Energy Efficiency and Renewable Energy (EERE)

    The purpose of this technical memorandum (TM) is to review the options to develop a potential solar array development (Project) within or adjacent to western burrowing owl (Athene cunicularia) habitat in the buffer lands that surround the San José/Santa Clara Water Pollution Control Plant (WPCP) and to determine if there is a ground-mounted solar photovoltaic (PV) configuration that would enable a workable co-existence between the burrowing owl habitat and the PV arrays.

  20. Burst Buffer Early User Program

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    * Chombo-Crunch + VisIt for carbon sequestration, David Trebotich, Berkeley Lab (BES) * SigmaUniFamSipros bioinformatics codes, Chongle Pan, Oak Ridge National Laboratory (BER)...

  1. Burst Buffer Early User Program

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SLAC (BESBER) NERSC-supported: Existing Engagements * ALICE data analysis, Jeff Porter, Berkeley Lab (NP) * Tractor: Cosmological data analysis (DESI), Peter Nugent,...

  2. Buffer layers for coated conductors

    DOE Patents [OSTI]

    Stan, Liliana; Jia, Quanxi; Foltyn, Stephen R.

    2011-08-23

    A composite structure is provided including a base substrate, an IBAD oriented material upon the base substrate, and a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material. Additionally, an article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and a thick film upon the cubic metal oxide material. Finally, a superconducting article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and an yttrium barium copper oxide material upon the cubic metal oxide material.

  3. Microstructural evaluation of Sb-adjusted Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer layer systems for IR applications

    SciTech Connect (OSTI)

    Chen, E.; Paine, D.C.; Uppal, P.; Ahearn, J.S.; Nichols, K.; Charache, G.W.

    1998-06-01

    The authors report on a transmission electron microscopy (TEM) study of Sb-adjusted quaternary Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBE at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBe at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} is successively increased in a series of 125 nm thick layers. Post growth analysis using conventional bright field and weak beam dark field imaging of these buffer layers in cross-section reveals that the interface misfit dislocations are primarily of the 60{degree} type and are distributed through out the interfaces of the buffer layer. When optimized, the authors have shown, using plan view and cross-sectional TEM, that this approach can reduce the threading defect density to below the detectability limit of TEM (< 10{sup 5}/cm{sup 2}) and preserve growth surface planarity. The Sb-graded approach was used to fabricate two 2.2 {micro}m power converter structures fabricated using InGaAs grown on Sb-based buffer layers on GaAs substrates. A microstructural and electrical characterization was performed on these device structures and the results are contrasted with a sample in which InP was selected as the substrate. Microstructure, defect density and device performance in these not-yet-optimized Sb-based buffer layers compares favorably to equivalent devices fabricated using InP substrates.

  4. Radiological Control

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    DOE-STD-1098-2008 October 2008 ------------------------------------- Change Notice 1 May 2009 DOE STANDARD RADIOLOGICAL CONTROL U.S. Department of Energy SAFT Washington, D.C. 20585 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. DOE-STD-1098-2008 ii This document is available on the Department of Energy Technical Standards Program Website at http://www.standards.doe.gov/ iii DOE-STD-1098-2008 Change Notice 1: DOE-STD-1098-2008, Radiological Control Standard

  5. Radiological Control

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    DOE-STD-1098-2008 October 2008 DOE STANDARD RADIOLOGICAL CONTROL U.S. Department of Energy AREA SAFT Washington, D.C. 20585 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. ii DOE-STD-1098-2008 This document is available on the Department of Energy Technical Standards Program Website at http://www.standards.doe.gov/ DOE-STD-1098-2008 Radiological Control DOE Policy October 2008 iii Foreword The Department of Energy (DOE) has developed this Standard to assist

  6. Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

    SciTech Connect (OSTI)

    Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo; Fin, Samuele; Guidi, Vincenzo; Vincenzi, Donato

    2014-09-26

    A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers.

  7. control design

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    control design - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Energy Defense Waste Management Programs Advanced Nuclear

  8. REACTOR CONTROL

    DOE Patents [OSTI]

    Ruano, W.J.

    1957-12-10

    This patent relates to nuclear reactors of the type which utilize elongited rod type fuel elements immersed in a liquid moderator and shows a design whereby control of the chain reaction is obtained by varying the amount of moderator or reflector material. A central tank for containing liquid moderator and fuel elements immersed therein is disposed within a surrounding outer tank providing an annular space between the two tanks. This annular space is filled with liquid moderator which functions as a reflector to reflect neutrons back into the central reactor tank to increase the reproduction ratio. Means are provided for circulating and cooling the moderator material in both tanks and additional means are provided for controlling separately the volume of moderator in each tank, which latter means may be operated automatically by a neutron density monitoring device. The patent also shows an arrangement for controlling the chain reaction by injecting and varying an amount of poisoning material in the moderator used in the reflector portion of the reactor.

  9. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J.; Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menndez, J.; Aoki, Toshihiro

    2014-10-07

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including

  10. Version Control

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Control at NERSC Jack Deslippe Options at NERSC SVN Great for small projects with few developers working on a single branch. GIT Great for big projects with many developers working on a variety of branches. Options at NERSC SVN Great for small projects with few developers working on a single branch. GIT Great for big projects with many developers working on a variety of branches. Other options (mercurial, bazaar, CVS) can be used at NERSC to some extent. But you are on your own. Why host at

  11. Heliostat control

    DOE Patents [OSTI]

    Kaehler, James A.

    1984-01-01

    An improvement in a system and method of controlling heliostat in which the heliostat is operable in azimuth and elevation by respective stepper motors and including the respective steps or means for calculating the position for the heliostat to be at a commanded position, determining the number of steps in azimuth and elevation for each respective motor to get to the commanded position and energizing both the azimuth and elevation stepper motors to run in parallel until predetermined number of steps away from the closest commanded position in azimuth and elevation so that the closest position has been achieved, and thereafter energizing only the remaining motor to bring it to its commanded position. In this way, the heliostat can be started from a stowed position in the morning and operated by a computer means to its commanded position and kept correctly oriented throughout the day using only the time of the day without requiring the usual sensors and feedback apparatus. A computer, or microprocessor, can then control a plurality of many heliostats easily and efficiently throughout the day.

  12. Power Control System

    Energy Science and Technology Software Center (OSTI)

    1995-02-24

    Power Control System (PCS) is used as a real time control software package for Supervisory Control and Data Acquistion (SCADA) in an electric utility control center environment.

  13. Stormwater Control Structures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stormwater Control Structures Stormwater Control Structures Stormwater control structures are engineered to control run-on and runoff water from suspected contaminated sites. ...

  14. Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

    SciTech Connect (OSTI)

    Krishnaprasad, P. S. E-mail: mkj@cusat.ac.in; Jayaraj, M. K. E-mail: mkj@cusat.ac.in; Antony, Aldrin; Rojas, Fredy

    2015-03-28

    Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ?-2?, ?-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BST thin films show significantly improved tunable performance over polycrystalline thin films.

  15. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

    SciTech Connect (OSTI)

    Szyszka, A. E-mail: adam.szyszka@pwr.wroc.pl; Haeberlen, M.; Storck, P.; Thapa, S. B.; Schroeder, T.

    2014-08-28

    Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated thatwith respect to the basic GaN/oxide/Si system without DBRthe insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

  16. Factors Controlling Redox Speciation of Plutonium and Neptunium in Extraction Separation Processes

    SciTech Connect (OSTI)

    Paulenova, Alena; Vandegrift, III, George F.

    2013-09-24

    The objective of the project was to examine the factors controlling redox speciation of plutonium and neptunium in UREX+ extraction in terms of redox potentials, redox mechanism, kinetics and thermodynamics. Researchers employed redox-speciation extractions schemes in parallel to the spectroscopic experiments. The resulting distribution of redox species w studied uring spectroscopic, electrochemical, and spectro-electrochemical methods. This work reulted in collection of data on redox stability and distribution of redox couples in the nitric acid/nitrate electrolyte and the development of redox buffers to stabilize the desired oxidation state of separated radionuclides. The effects of temperature and concentrations on the redox behavior of neptunium were evaluated.

  17. Perpendicularly magnetized (001)-textured D0{sub 22} MnGa films grown on an (Mg{sub 0.2}Ti{sub 0.8})O buffer with thermally oxidized Si substrates

    SciTech Connect (OSTI)

    Lee, Hwachol; Sukegawa, Hiroaki; Liu, Jun; Mitani, Seiji; Hono, Kazuhiro

    2015-10-28

    We report the growth of (001)-textured polycrystalline D0{sub 22} MnGa films with perpendicular magnetic anisotropy (PMA) on thermally oxidized Si substrates using an (Mg{sub 0.2}Ti{sub 0.8})O (MTO) buffer layer. The ordered D0{sub 22} MnGa film grown at the optimum substrate temperature of 530 °C on the MTO buffer layer shows PMA with magnetization of 80 kA/m, PMA energy density of 0.28 MJ/m{sup 3}, and coercivity of 2.3 T. The scanning transmission electron microscope analysis confirms the formation of a highly (001)-textured structure and the elementally sharp interfaces between the MTO layer and the MnGa layer. The achieved D0{sub 22} MnGa PMA films on an amorphous substrate will provide the possible pathway of integration of a Mn-based PMA film into Si-based substrates.

  18. Microwave surface resistance of YBa{sub 2}Cu{sub 3}Cu{sub 3}O{sub 7{minus}{ital x}} films on polycrystalline ceramic substrates with textured buffer layers

    SciTech Connect (OSTI)

    Findikoglu, A.T.; Foltyn, S.R.; Arendt, P.N.; Groves, J.R.; Jia, Q.X.; Peterson, E.J.; Wu, X.D.; Reagor, D.W.

    1996-09-01

    We have used a parallel-plate resonator technique to measure the microwave surface resist- ance {ital R}{sub {ital s}} of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} (YBCO) films on buffered ceramic substrates at around 10 GHz, and studied the correlation between their {ital R}{sub {ital s}} and materials properties. A 0.4-{mu}m-thick YBCO film (with an in-plane mosaic spread of 7{degree}) grown on a polycrystalline alumina substrate with an ion-beam-assisted-deposited yttria-stabilized zirconia buffer layer showed an {ital R}{sub {ital s}} of 1.89 m{Omega} at 76 K and 0.21 m{Omega} at 4 K. We have observed a strong correlation between the {ital R}{sub {ital s}} of the samples and the in-plane mosaic spread of the YBCO films. This correlation can be explained qualitatively in terms of a simple model in which the weak links between the grains of the YBCO film form an electrical network of Josephson junctions.

  19. Thermal Control & System Integration

    Broader source: Energy.gov [DOE]

    The thermal control and system integration activity focuses on issues such as the integration of motor and power control technologies and the development of advanced thermal control technologies....

  20. Néel temperature of Cr{sub 2}O{sub 3} in Cr{sub 2}O{sub 3}/Co exchange-coupled system: Effect of buffer layer

    SciTech Connect (OSTI)

    Pati, Satya Prakash E-mail: phy-satya@yahoo.co.in; Shimomura, Naoki; Nozaki, Tomohiro; Sahashi, Masashi; Shibata, Tatsuo

    2015-05-07

    The lattice parameter dependence of the Néel temperature T{sub N} of thin Cr{sub 2}O{sub 3} in a Cr{sub 2}O{sub 3}/Co exchange-coupled system is investigated. Lattice-mismatch-induced strain is generated in Cr{sub 2}O{sub 3} by using different buffer layers. The lattice parameters are determined from out-of-plane and in-plane X-ray diffraction measurements. The Néel temperature is detected by direct temperature-dependent magnetization measurement as well as the temperature-dependent interface exchange coupling energy. It is observed that in-plane lattice contraction can enhance T{sub N} in Cr{sub 2}O{sub 3}, which is consistent with theoretical calculations.

  1. Superconducting fault current controller/current controller

    DOE Patents [OSTI]

    Cha, Yung S.

    2004-06-15

    A superconducting fault current controller/current controller employs a superconducting-shielded core reactor (SSCR) with a variable impedance in a secondary circuit to control current in a primary circuit such as an electrical distribution system. In a second embodiment, a variable current source is employed in a secondary circuit of an SSCR to control current in the primary circuit. In a third embodiment, both a variable impedance in one secondary circuit and a variable current source in a second circuit of an SSCR are employed for separate and independent control of current in the primary circuit.

  2. Sediment Control: Willows

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sediment Control: Willows Sediment Control: Willows LANL recently planted 10,000 willows and constructed wing ditches to increase sediment retention in Pueblo and Los Alamos...

  3. Radiological Control Technician Training

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... of candidates for Radiological Control Technician (RCT) and for RCT Supervisor. ... OEBs as indicated in DOE's Radiological Control Standard (RCS) and the RCT Training ...

  4. CONTROL LIMITER DEVICE

    DOE Patents [OSTI]

    DeShong, J.A.

    1960-03-01

    A control-limiting device for monltoring a control system is described. The system comprises a conditionsensing device, a condition-varying device exerting a control over the condition, and a control means to actuate the condition-varying device. A control-limiting device integrates the total movement or other change of the condition-varying device over any interval of time during a continuum of overlapping periods of time, and if the tothl movement or change of the condition-varying device exceeds a preset value, the control- limiting device will switch the control of the operated apparatus from automatic to manual control.

  5. Superconducting VAR control

    DOE Patents [OSTI]

    Boenig, Heinrich J.; Hassenzahl, William V.

    1982-01-01

    Static VAR control means employing an asymmetrically controlled Graetz bridge and a superconducting direct current coil having low losses and low cost characteristics.

  6. Surface contouring by controlled application of processing fluid using Marangoni effect

    DOE Patents [OSTI]

    Rushford, Michael C.; Britten, Jerald A.

    2003-04-29

    An apparatus and method for modifying the surface of an object by contacting said surface with a liquid processing solution using the liquid applicator geometry and Marangoni effect (surface tension gradient-driven flow) to define and confine the dimensions of the wetted zone on said object surface. In particular, the method and apparatus involve contouring or figuring the surface of an object using an etchant solution as the wetting fluid and using realtime metrology (e.g. interferometry) to control the placement and dwell time of this wetted zone locally on the surface of said object, thereby removing material from the surface of the object in a controlled manner. One demonstrated manifestation is in the deterministic optical figuring of thin glasses by wet chemical etching using a buffered hydrofluoric acid solution and Marangoni effect.

  7. Furnace Pressure Controllers

    Broader source: Energy.gov [DOE]

    This tip sheet highlights the benefits of precise furnace pressure control in process heating systems.

  8. Diesel Emission Control Review

    Broader source: Energy.gov [DOE]

    Reviews regulatory requirements and technology approaches for diesel emission control for heavy and light duty applications

  9. Nuclear reactor control apparatus

    DOE Patents [OSTI]

    Sridhar, Bettadapur N.

    1983-11-01

    Nuclear reactor core safety rod release apparatus comprises a control rod having a detent notch in the form of an annular peripheral recess at its upper end, a control rod support tube for raising and lowering the control rod under normal conditions, latches pivotally mounted on the control support tube with free ends thereof normally disposed in the recess in the control rod, and cam means for pivoting the latches out of the recess in the control rod when a scram condition occurs. One embodiment of the invention comprises an additional magnetically-operated latch for releasing the control rod under two different conditions, one involving seismic shock.

  10. HYDRAULIC SERVO CONTROL MECHANISM

    DOE Patents [OSTI]

    Hussey, R.B.; Gottsche, M.J. Jr.

    1963-09-17

    A hydraulic servo control mechanism of compact construction and low fluid requirements is described. The mechanism consists of a main hydraulic piston, comprising the drive output, which is connected mechanically for feedback purposes to a servo control piston. A control sleeve having control slots for the system encloses the servo piston, which acts to cover or uncover the slots as a means of controlling the operation of the system. This operation permits only a small amount of fluid to regulate the operation of the mechanism, which, as a result, is compact and relatively light. This mechanism is particuiarly adaptable to the drive and control of control rods in nuclear reactors. (auth)

  11. Retrofit Diesel Emissions Control System Providing 50% NOxControl...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Diesel Emissions Control System Providing 50% NOxControl Retrofit Diesel Emissions Control System Providing 50% NOxControl 2005 Diesel Engine Emissions Reduction (DEER) Conference ...

  12. Limits of optimal control yields achievable with quantum controllers...

    Office of Scientific and Technical Information (OSTI)

    Limits of optimal control yields achievable with quantum controllers Prev Next Title: Limits of optimal control yields achievable with quantum controllers Authors: Wu, ...

  13. Control rod drive

    DOE Patents [OSTI]

    Hawke, Basil C.

    1986-01-01

    A control rod drive uses gravitational forces to insert one or more control rods upwardly into a reactor core from beneath the reactor core under emergency conditions. The preferred control rod drive includes a vertically movable weight and a mechanism operatively associating the weight with the control rod so that downward movement of the weight is translated into upward movement of the control rod. The preferred control rod drive further includes an electric motor for driving the control rods under normal conditions, an electrically actuated clutch which automatically disengages the motor during a power failure and a decelerator for bringing the control rod to a controlled stop when it is inserted under emergency conditions into a reactor core.

  14. CONTROL ROD DRIVE

    DOE Patents [OSTI]

    Chapellier, R.A.; Rogers, I.

    1961-06-27

    Accurate and controlled drive for the control rod is from an electric motor. A hydraulic arrangement is provided to balance a piston against which a control rod is urged by the application of fluid pressure. The electric motor drive of the control rod for normal operation is made through the aforementioned piston. In the event scramming is required, the fluid pressure urging the control rod against the piston is relieved and an opposite fluid pressure is applied. The lack of mechanical connection between the electric motor and control rod facilitates the scramming operation.

  15. Control system design method

    DOE Patents [OSTI]

    Wilson, David G.; Robinett, III, Rush D.

    2012-02-21

    A control system design method and concomitant control system comprising representing a physical apparatus to be controlled as a Hamiltonian system, determining elements of the Hamiltonian system representation which are power generators, power dissipators, and power storage devices, analyzing stability and performance of the Hamiltonian system based on the results of the determining step and determining necessary and sufficient conditions for stability of the Hamiltonian system, creating a stable control system based on the results of the analyzing step, and employing the resulting control system to control the physical apparatus.

  16. Yttria-stabilized zirconia buffered silicon to optimize in-plane electrical conductivity of [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] thin films

    SciTech Connect (OSTI)

    Kraus, T.; Griesser, A.; Klein, O.; Fischer, M.; Schreck, M.; Karl, H.

    2014-05-05

    The monolithic integration of thermoelectric generators and magnetoresistive functionality on the basis of misfit cobaltate [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] thin films into silicon technology is a prerequisite for their application in miniaturized electric circuits. Here, we report on [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] thin films grown by pulsed laser deposition on (001)-silicon with a thin epitaxial yttria-stabilized zirconia (YSZ) buffer layer. X-ray diffraction and cross-sectional high resolution transmission electron microscopy analysis reveal that high quality c-axis oriented heteroepitaxial [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] films with a 12-fold in-plane rotational symmetry can be grown, which exhibit remarkable lower electrical resistivity compared to those with random in-plane orientation. This result is explained by energetically preferred epitaxial growth directions of the pseudo hexagonal [CoO{sub 2}] sublayer in monoclinic [Ca{sub 2}CoO{sub 3}]{sub 0.62}[CoO{sub 2}] onto the cubic (001)-YSZ surface leading to a highly symmetric in-plane mutual orientation of the charge transporting CoO{sub 2} sublayer domains.

  17. Sediment Control: Willows

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sediment Control: Willows Sediment Control: Willows LANL recently planted 10,000 willows and constructed wing ditches to increase sediment retention in Pueblo and Los Alamos canyons. August 1, 2013 Willows: Fall 2010 Willows: Fall 2010

  18. Stormwater Control Structures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stormwater Control Structures Stormwater Control Structures Stormwater control structures are engineered to control run-on and runoff water from suspected contaminated sites. Structures trap sediment, keep water on-site, slow water flow and redirect water around problem areas. Rock check dams Rock check dams Silt tence Silt fence Sediment trap Sediment trap Wood mulch and native seed Wood mulch and native seed Gabion Gabion Concrete lined swales Concrete lined swales Hydroseeding Hydroseeding

  19. Fuel control system

    SciTech Connect (OSTI)

    Detweiler, C.A.

    1980-12-30

    A fuel control system for a turbocharged engine having fuel delivered to the carburetor under the control of a vacuum operated device which is under the further control of a device sensing pressures upstream and downstream of the turbo charger compressor and delivering a vacuum signal to the fuel control device in proportion to the manifold pressure even though the latter pressure may be a positive pressure.

  20. System for controlling apnea

    DOE Patents [OSTI]

    Holzrichter, John F

    2015-05-05

    An implanted stimulation device or air control device are activated by an external radar-like sensor for controlling apnea. The radar-like sensor senses the closure of the air flow cavity, and associated control circuitry signals (1) a stimulator to cause muscles to open the air passage way that is closing or closed or (2) an air control device to open the air passage way that is closing or closed.

  1. Floating Point Control Library

    Energy Science and Technology Software Center (OSTI)

    2007-08-02

    Floating Point Control is a Library that allows for the manipulation of floating point unit exception masking funtions control exceptions in both the Streaming "Single Instruction, Multiple Data" Extension 2 (SSE2) unit and the floating point unit simultaneously. FPC also provides macros to set floating point rounding and precision control.

  2. Water heater control module

    DOE Patents [OSTI]

    Hammerstrom, Donald J

    2013-11-26

    An advanced electric water heater control system that interfaces with a high temperature cut-off thermostat and an upper regulating thermostat. The system includes a control module that is electrically connected to the high-temperature cut-off thermostat and the upper regulating thermostat. The control module includes a switch to open or close the high-temperature cut-off thermostat and the upper regulating thermostat. The control module further includes circuitry configured to control said switch in response to a signal selected from the group of an autonomous signal, a communicated signal, and combinations thereof.

  3. CONTROL FOR NEUTRONIC REACTOR

    DOE Patents [OSTI]

    Lichtenberger, H.V.; Cameron, R.A.

    1959-03-31

    S>A control rod operating device in a nuclear reactor of the type in which the control rod is gradually withdrawn from the reactor to a position desired during stable operation is described. The apparatus is comprised essentially of a stop member movable in the direction of withdrawal of the control rod, a follower on the control rod engageable with the stop and means urging the follower against the stop in the direction of withdrawal. A means responsive to disengagement of the follower from the stop is provided for actuating the control rod to return to the reactor shut-down position.

  4. Control and optimization system

    DOE Patents [OSTI]

    Xinsheng, Lou

    2013-02-12

    A system for optimizing a power plant includes a chemical loop having an input for receiving an input parameter (270) and an output for outputting an output parameter (280), a control system operably connected to the chemical loop and having a multiple controller part (230) comprising a model-free controller. The control system receives the output parameter (280), optimizes the input parameter (270) based on the received output parameter (280), and outputs an optimized input parameter (270) to the input of the chemical loop to control a process of the chemical loop in an optimized manner.

  5. Integrated Biological Control

    SciTech Connect (OSTI)

    JOHNSON, A.R.

    2002-09-01

    Biological control is any activity taken to prevent, limit, clean up, or remediate potential environmental, health and safety, or workplace quality impacts from plants, animals, or microorganisms. At Hanford the principal emphasis of biological control is to prevent the transport of radioactive contamination by biological vectors (plants, animals, or microorganisms), and where necessary, control and clean up resulting contamination. Other aspects of biological control at Hanford include industrial weed control (e.g.; tumbleweeds), noxious weed control (invasive, non-native plant species), and pest control (undesirable animals such as rodents and stinging insects; and microorganisms such as molds that adversely affect the quality of the workplace environment). Biological control activities may be either preventive (apriori) or in response to existing contamination spread (aposteriori). Surveillance activities, including ground, vegetation, flying insect, and other surveys, and apriori control actions, such as herbicide spraying and placing biological barriers, are important in preventing radioactive contamination spread. If surveillance discovers that biological vectors have spread radioactive contamination, aposteriori control measures, such as fixing contamination, followed by cleanup and removal of the contamination to an approved disposal location are typical response functions. In some cases remediation following the contamination cleanup and removal is necessary. Biological control activities for industrial weeds, noxious weeds and pests have similar modes of prevention and response.

  6. Integrated Biological Control

    SciTech Connect (OSTI)

    JOHNSON, A.R.

    2003-10-09

    Biological control is any activity taken to prevent, limit, clean up, or remediate potential environmental, health and safety, or workplace quality impacts from plants, animals, or microorganisms. At Hanford the principal emphasis of biological control is to prevent the transport of radioactive contamination by biological vectors (plants, animals, or microorganisms), and where necessary, control and clean up resulting contamination. Other aspects of biological control at Hanford include industrial weed control (e.g.; tumbleweeds), noxious weed control (invasive, non-native plant species), and pest control (undesirable animals such as rodents and stinging insects, and microorganisms such as molds that adversely affect the quality of the workplace environment). Biological control activities may be either preventive (a priori) or in response to existing contamination spread (a posteriori). Surveillance activities, including ground, vegetation, flying insect, and other surveys, and a priori control actions, such as herbicide spraying and placing biological barriers, are important in preventing radioactive contamination spread. If surveillance discovers that biological vectors have spread radioactive contamination, a posteriori control measures, such as fixing contamination, followed by cleanup and removal of the contamination to an approved disposal location are typical response functions. In some cases remediation following the contamination cleanup and removal is necessary. Biological control activities for industrial weeds, noxious weeds and pests have similar modes of prevention and response.

  7. CRUCIFORM CONTROL ROD JOINT

    DOE Patents [OSTI]

    Thorp, A.G. II

    1962-08-01

    An invention is described which relates to nuclear reactor control rod components and more particularly to a joint between cruciform control rod members and cruciform control rod follower members. In one embodiment this invention provides interfitting crossed arms at adjacent ends of a control rod and its follower in abutting relation. This holds the members against relative opposite longitudinal movement while a compression member keys the arms against relative opposite rotation around a common axis. Means are also provided for centering the control rod and its follower on a common axis and for selectively releasing the control rod from its follower for the insertion of a replacement of the control rod and reuse of the follower. (AEC)

  8. Rapid screening buffer layers in photovoltaics

    SciTech Connect (OSTI)

    List, III, Frederick Alyious; Tuncer, Enis

    2014-09-09

    An apparatus and method of testing electrical impedance of a multiplicity of regions of a photovoltaic surface includes providing a multi-tipped impedance sensor with a multiplicity of spaced apart impedance probes separated by an insulating material, wherein each impedance probe includes a first end adapted for contact with a photovoltaic surface and a second end in operable communication with an impedance measuring device. The multi-tipped impedance sensor is used to contact the photovoltaic surface and electrical impedance of the photovoltaic material is measured between individual first ends of the probes to characterize the quality of the photovoltaic surface.

  9. Nuclear reactor control

    DOE Patents [OSTI]

    Cawley, William E.; Warnick, Robert F.

    1982-01-01

    1. In a nuclear reactor incorporating a plurality of columns of tubular fuel elements disposed in horizontal tubes in a mass of graphite wherein water flows through the tubes to cool the fuel elements, the improvement comprising at least one control column disposed in a horizontal tube including fewer fuel elements than in a normal column of fuel elements and tubular control elements disposed at both ends of said control column, and means for varying the horizontal displacement of the control column comprising a winch at the upstream end of the control column and a cable extending through the fuel and control elements and attached to the element at the downstream end of the column.

  10. Fuzzy logic controller optimization

    DOE Patents [OSTI]

    Sepe, Jr., Raymond B; Miller, John Michael

    2004-03-23

    A method is provided for optimizing a rotating induction machine system fuzzy logic controller. The fuzzy logic controller has at least one input and at least one output. Each input accepts a machine system operating parameter. Each output produces at least one machine system control parameter. The fuzzy logic controller generates each output based on at least one input and on fuzzy logic decision parameters. Optimization begins by obtaining a set of data relating each control parameter to at least one operating parameter for each machine operating region. A model is constructed for each machine operating region based on the machine operating region data obtained. The fuzzy logic controller is simulated with at least one created model in a feedback loop from a fuzzy logic output to a fuzzy logic input. Fuzzy logic decision parameters are optimized based on the simulation.

  11. Radiological Control Technician Training

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Part 6 of 9 Radiological Control Technician Training Site Academic Training Study Guide Phase I Coordinated and Conducted for the Office of Health, Safety and Security U.S. Department of Energy DOE-HDBK-1122-2009 Radiological Control Technician Study Guide ii This page intentionally left blank DOE-HDBK-1122-2009 Radiological Control Technician Study Guide iii Table of Contents Page Module 2.01 Radiological Documentation

  12. Cyber Securing Control Systems

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Industrial Control Systems Integration into the DoD Networks A Briefing in Response to House Report 113-102, Accompanying the FY14 National Defense Authorization Act Unclassified - Distribution Statement A August, 2015 Cyber Securing Control Systems Acquisition, Technology and Logistics 2 DoD Scope of Platform IT & Control Systems * Acquisitions / Weapon Systems - H,M & E (ships / subs, missiles, UVs, etc.) - Training Simulators, 3D printing, etc. * EI&E - Buildings & linear

  13. Nuclear Controls Checklist

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nuclear Controls Yes No 1) Is your Facility involved in the research on or development, design, manufacture, construction, testing or maintenance of any nuclear explosive ...

  14. Controlling Graphene's Electronic Structure

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Controlling Graphene's Electronic Structure Print Graphene, because of its unusual electron properties, reduced dimensionality, and scale, has enormous potential for use in...

  15. Advanced Rooftop Unit Control

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advanced-Rooftop-Unit-Control Sign In About | Careers | Contact | Investors | bpa.gov Search Policy & Reporting Expand Policy & Reporting EE Sectors Expand EE Sectors...

  16. Voltage Control Technical Conference

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1-08-Voltage-Control-Technical-Conference Sign In About | Careers | Contact | Investors | bpa.gov Search News & Us Expand News & Us Projects & Initiatives Expand Projects &...

  17. Control system design guide

    SciTech Connect (OSTI)

    Sellers, David; Friedman, Hannah; Haasl, Tudi; Bourassa, Norman; Piette, Mary Ann

    2003-05-01

    The ''Control System Design Guide'' (Design Guide) provides methods and recommendations for the control system design process and control point selection and installation. Control systems are often the most problematic system in a building. A good design process that takes into account maintenance, operation, and commissioning can lead to a smoothly operating and efficient building. To this end, the Design Guide provides a toolbox of templates for improving control system design and specification. HVAC designers are the primary audience for the Design Guide. The control design process it presents will help produce well-designed control systems that achieve efficient and robust operation. The spreadsheet examples for control valve schedules, damper schedules, and points lists can streamline the use of the control system design concepts set forth in the Design Guide by providing convenient starting points from which designers can build. Although each reader brings their own unique questions to the text, the Design Guide contains information that designers, commissioning providers, operators, and owners will find useful.

  18. Detonation command and control

    DOE Patents [OSTI]

    Mace, Jonathan L.; Seitz, Gerald J.; Echave, John A.; Le Bas, Pierre-Yves

    2015-11-10

    The detonation of one or more explosive charges and propellant charges by a detonator in response to a fire control signal from a command and control system comprised of a command center and instrumentation center with a communications link therebetween. The fire control signal is selectively provided to the detonator from the instrumentation center if plural detonation control switches at the command center are in a fire authorization status, and instruments, and one or more interlocks, if included, are in a ready for firing status. The instrumentation and command centers are desirably mobile, such as being respective vehicles.

  19. Detonation command and control

    DOE Patents [OSTI]

    Mace, Jonathan L.; Seitz, Gerald J.; Echave, John A.; Le Bas, Pierre-Yves

    2016-05-31

    The detonation of one or more explosive charges and propellant charges by a detonator in response to a fire control signal from a command and control system comprised of a command center and instrumentation center with a communications link there between. The fire control signal is selectively provided to the detonator from the instrumentation center if plural detonation control switches at the command center are in a fire authorization status, and instruments, and one or more interlocks, if included, are in a ready for firing status. The instrumentation and command centers are desirably mobile, such as being respective vehicles.

  20. Unclassified Controlled Nuclear Information

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1995-09-25

    To prevent unauthorized dissemination of Unclassified Controlled Nuclear Information (UCNI). Cancels DOE 5635.4 and DOE 5650.3A

  1. Cooled, temperature controlled electrometer

    DOE Patents [OSTI]

    Morgan, John P.

    1992-08-04

    A cooled, temperature controlled electrometer for the measurement of small currents. The device employs a thermal transfer system to remove heat from the electrometer circuit and its environment and dissipate it to the external environment by means of a heat sink. The operation of the thermal transfer system is governed by a temperature regulation circuit which activates the thermal transfer system when the temperature of the electrometer circuit and its environment exceeds a level previously inputted to the external variable temperature control circuit. The variable temperature control circuit functions as subpart of the temperature control circuit. To provide temperature stability and uniformity, the electrometer circuit is enclosed by an insulated housing.

  2. Cooled, temperature controlled electrometer

    DOE Patents [OSTI]

    Morgan, John P.

    1992-01-01

    A cooled, temperature controlled electrometer for the measurement of small currents. The device employs a thermal transfer system to remove heat from the electrometer circuit and its environment and dissipate it to the external environment by means of a heat sink. The operation of the thermal transfer system is governed by a temperature regulation circuit which activates the thermal transfer system when the temperature of the electrometer circuit and its environment exceeds a level previously inputted to the external variable temperature control circuit. The variable temperature control circuit functions as subpart of the temperature control circuit. To provide temperature stability and uniformity, the electrometer circuit is enclosed by an insulated housing.

  3. Controlling Graphene's Electronic Structure

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... point in momentum space (the Dirac crossing energy). The researchers demonstrated that through selective control of the carrier concentration in the graphene layers, the band ...

  4. Sun tracking controller

    SciTech Connect (OSTI)

    Menser, H.K.; Newcomb, R.D.

    1981-11-24

    An apparatus is described which controls the electric tracking motors of solar energy collectors and other solar devices which are adapted to be aimed at the sun.

  5. Radiological Control Technician Training

    Broader source: Energy.gov (indexed) [DOE]

    7of 9 Radiological Control Technician Training Practical Training Phase II Coordinated and Conducted for the Office of Health, Safety and Security U.S. Department of Energy ...

  6. Radiological Control Technician Training

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    HANDBOOK RADIOLOGICAL CONTROL TECHNICIAN TRAINING U.S. Department of Energy AREA TRNG ... an implementation process for core training as recommended in chapter 14 to ...

  7. Radiological Control Technician Training

    Broader source: Energy.gov (indexed) [DOE]

    Radiological Control Technician Training Facility Practical Training Attachment Phase IV Coordinated and Conducted for the Office of Health, Safety and Security U.S. Department of ...

  8. Hydraulic control rod

    DOE Patents [OSTI]

    Treshow, Michael

    1976-01-01

    Apparatus for shifting a control rod into and out of a nuclear reactor utilizing as pressure fluid the fluid employed as coolant moderator in the reactor.

  9. Controlling Graphene's Electronic Structure

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    spectroscopy (ARPES) at ALS Beamline 7.0.1, a team of scientists from the ALS and Germany characterized the electronic band structure and successfully controlled the gap...

  10. Management Control Program

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2002-04-18

    To establish requirements and responsibilities for the Department of Energy Management Control Program. Cancels DOE O 413.1. Canceled by DOE O 413.1B.