National Library of Energy BETA

Sample records for a-si thin-film solar

  1. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    SciTech Connect (OSTI)

    Pathirane, M. Iheanacho, B.; Lee, C.-H.; Wong, W. S.; Tamang, A.; Knipp, D.; Lujan, R.

    2015-10-05

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm–800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  2. High efficiency thin film CdTe and a-Si based solar cells

    SciTech Connect (OSTI)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10

  3. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  4. Thin Film Solar Technologies | Open Energy Information

    Open Energy Info (EERE)

    help OpenEI by expanding it. Thin Film Solar Technologies is a company located in South Africa . References "Thin Film Solar Technologies" Retrieved from "http:...

  5. Manipulating hybrid structures of polymer/a-Si for thin film solar cells

    SciTech Connect (OSTI)

    Peng, Ying; He, Zhiqun, E-mail: zhqhe@bjtu.edu.cn, E-mail: J.I.B.Wilson@hw.ac.uk; Zhang, Zhi; Liang, Chunjun [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Diyaf, Adel; Ivaturi, Aruna; Wilson, John I. B., E-mail: zhqhe@bjtu.edu.cn, E-mail: J.I.B.Wilson@hw.ac.uk [SUPA, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)

    2014-03-10

    A series of uniform polymer/amorphous silicon hybrid structures have been fabricated by means of solution-casting for polymer and radio frequency excited plasma enhanced chemical vapour deposition for amorphous silicon (a-Si:H). Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) functioned as a photoactive donor, while the silicon layer acted as an acceptor. It is found that matching the hole mobility of the polymer to the electron mobility of amorphous silicon is critical to improve the photovoltaic performance from hybrid cells. A three-layer p-i-n structure of ITO/PEDOT:PSS(200?nm)/i-Si(450?nm)/n-Si(200?nm)/Al with a power conversion efficiency of 4.78% under a standard test condition was achieved.

  6. Overview and Challenges of Thin Film Solar Electric Technologies

    SciTech Connect (OSTI)

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  7. Progress in thin film solar photovoltaic technologies

    SciTech Connect (OSTI)

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L. )

    1991-01-01

    This paper focuses on the rapid recent advances made by thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, and cadmium telluride. It also indicates the several advantages of thin films. Various consumer products and power applications using thin film solar cells are also discussed. The increasing interest among the utilities for PV system applications is also elucidated.

  8. Thin film solar energy collector

    DOE Patents [OSTI]

    Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

    1983-11-22

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  9. Progress in thin film solar photovoltaic technologies

    SciTech Connect (OSTI)

    Ullal, H.S.; Zweibel, K.

    1989-12-01

    This paper focuses on the rapid recent advances made by thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, and cadmium telluride. It also indicates the several advantages of thin films. Various consumer products and power applications using thin film solar cells are also discussed. The increasing interest among the utilities for PV system applications is also elucidated. 29 refs., 8 figs., 3 tabs.

  10. Thin-Film Photovoltaics on Solar House

    Broader source: Energy.gov [DOE]

    In this photograph, people are reflected on Team Germany's window louvers with integrated thin-film copper indium gallium selenide (CIGS) cells during the U.S. Department of Energy Solar Decathlon...

  11. Thin film absorber for a solar collector

    DOE Patents [OSTI]

    Wilhelm, William G.

    1985-01-01

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  12. High-Rate Fabrication of a-Si-Based Thin-Film Solar Cells Using Large-Area VHF PECVD Processes

    SciTech Connect (OSTI)

    Deng, Xunming; Fan, Qi Hua

    2011-12-31

    The University of Toledo (UT), working in concert with it’s a-Si-based PV industry partner Xunlight Corporation (Xunlight), has conducted a comprehensive study to develop a large-area (3ft x 3ft) VHF PECVD system for high rate uniform fabrication of silicon absorber layers, and the large-area VHF PECVD processes to achieve high performance a-Si/a-SiGe or a-Si/nc-Si tandem junction solar cells during the period of July 1, 2008 to Dec. 31, 2011, under DOE Award No. DE-FG36-08GO18073. The project had two primary goals: (i) to develop and improve a large area (3 ft × 3 ft) VHF PECVD system for high rate fabrication of > = 8 Å/s a-Si and >= 20 Å/s nc-Si or 4 Å/s a-SiGe absorber layers with high uniformity in film thicknesses and in material structures. (ii) to develop and optimize the large-area VHF PECVD processes to achieve high-performance a-Si/nc-Si or a-Si/a-SiGe tandem-junction solar cells with >= 10% stable efficiency. Our work has met the goals and is summarized in “Accomplishments versus goals and objectives”.

  13. Thin film solar energy collector

    SciTech Connect (OSTI)

    Farrauto, R.J.; Myers, H.; Williams, J.C.

    1982-03-23

    A solar energy collector has improved absorptance and emissivity levels comprising: (1) a silver-copper oxide-rhodium oxide solar absorption film, (2) a cerium oxide interlayer and a substrate of quartz, silica glass or metal. The cerium oxide interlayer minimizes agglomeration of the metal particles, maintains a relatively low thermal emittance and improves overall stability.

  14. Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

    DOE Patents [OSTI]

    Wang, Qi; Iwaniczko, Eugene

    2006-10-17

    A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.

  15. Solar Thin Films Inc formerly American United Global Inc | Open...

    Open Energy Info (EERE)

    Films Inc formerly American United Global Inc Jump to: navigation, search Name: Solar Thin Films Inc (formerly American United Global Inc) Place: New York, New York Zip: 10038...

  16. Overview and Challenges of Thin Film Solar Electric Technologies

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Challenges of Thin Film Solar Electric Technologies H.S. Ullal Presented at the World Renewable Energy Congress X and Exhibition 2008 Glasgow, Scotland, United Kingdom July ...

  17. Tax Credits Give Thin-Film Solar a Big Boost

    Broader source: Energy.gov [DOE]

    California company will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.

  18. NREL Achieves World Record Performance For Thin Film Solar Cell...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NREL Achieves World Record Performance For Thin Film Solar Cell Technology Golden, Colo., May 10, 1996 -- Scientists at the U. S. Department of Energy's National Renewable Energy ...

  19. Thin-Film Solar Cell Manufacturing

    Broader source: Energy.gov [DOE]

    In this b-roll, thin-film photovoltaic cells are manufactured and deployed in Arizona. Steps shown in the manufacturing process include the screen printing of conductive material onto laminated...

  20. Polycrystalline Thin-Film Multijunction Solar Cells

    SciTech Connect (OSTI)

    Noufi, R.; Wu, X.; Abu-Shama, J.; Ramanathan, K; Dhere, R.; Zhou, J.; Coutts, T.; Contreras, M.; Gessert, T.; Ward, J. S.

    2005-11-01

    We present a digest of our research on the thin-film material components that comprise the top and bottom cells of three different material systems and the tandem devices constructed from them.

  1. Flexible Thin-Film Silicon Solar Cells

    SciTech Connect (OSTI)

    Vijh, Aarohi; Cao, Simon; Mohring, Brad

    2014-01-11

    High fuel costs, environmental concerns and issues of national energy security have brought increasing attention to a distributed generation program for electricity based on solar technology. Rooftop photovoltaic (PV) systems provide distributed generation since the power is consumed at the point of production, thus eliminating the need for costly additional transmission lines. However, most current photovoltaic modules are heavy and require a significant amount of labor and accessory hardware such as mounting frames for installation on rooftops. This makes rooftop systems impractical or cost prohibitive in many instances. Under this project, Xunlight has advanced its manufacturing process for the production of lightweight, flexible thin-film silicon based photovoltaic modules, and has enhanced the reliability and performance of Xunlights products. These modules are easily unrolled and adhered directly to standard commercial roofs without mounting structures or integrated directly into roofing membrane materials for the lowest possible installation costs on the market. Importantly, Xunlight has now established strategic alliances with roofing material manufacturers and other OEMs for the development of building integrated photovoltaic roofing and other PV-enabled products, and has deployed its products in a number of commercial installations with these business partners.

  2. Thin-film absorber for a solar collector

    SciTech Connect (OSTI)

    Wilhelm, W.G.

    1982-02-09

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  3. CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and...

    Office of Scientific and Technical Information (OSTI)

    CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments Citation Details In-Document Search Title: CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and ...

  4. High-Efficiency GaAs Thin-Film Solar Cell Reliability | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GaAs Thin-Film Solar Cell Reliability High-Efficiency GaAs Thin-Film Solar Cell Reliability Presented at the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado ...

  5. Processing and modeling issues for thin-film solar cell devices. Final report

    SciTech Connect (OSTI)

    Birkmire, R.W.; Phillips, J.E.

    1997-11-01

    During the third phase of the subcontract, IEC researchers have continued to provide the thin film PV community with greater depth of understanding and insight into a wide variety of issues including: the deposition and characterization of CuIn{sub 1-x}Ga{sub x}Se{sub 2}, a-Si, CdTe, CdS, and TCO thin films; the relationships between film and device properties; and the processing and analysis of thin film PV devices. This has been achieved through the systematic investigation of all aspects of film and device production and through the analysis and quantification of the reaction chemistries involved in thin film deposition. This methodology has led to controlled fabrications of 15% efficient CuIn{sub 1-x}Ga{sub x}Se{sub 2} solar cells over a wide range of Ga compositions, improved process control of the fabrication of 10% efficient a-Si solar cells, and reliable and generally applicable procedures for both contacting and doping films. Additional accomplishments are listed below.

  6. Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)

    SciTech Connect (OSTI)

    Gessert, T. A.

    2010-09-01

    Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

  7. High Efficiency CdTe and CIGS Thin Film Solar Cells: Highlights...

    Office of Scientific and Technical Information (OSTI)

    Sponsoring Org: USDOE Country of Publication: United States Language: English Subject: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; EFFICIENCY; ENERGY CONVERSION; SOLAR CELLS; THIN FILMS ...

  8. Thin film solar cell including a spatially modulated intrinsic layer

    SciTech Connect (OSTI)

    Guha, Subhendu; Yang, Chi-Chung; Ovshinsky, Stanford R.

    1989-03-28

    One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

  9. Methods for fabricating thin film III-V compound solar cell

    DOE Patents [OSTI]

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  10. New Selection Metric for Design of Thin-Film Solar Cell Absorber...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Maximum Efficiency (SLME) is a new and calculable selection metric to identify new andor improved photovoltaic (PV) absorber candidate materials for thin- film solar cells. ...

  11. Thin film cadmium telluride and zinc phosphide solar cells

    SciTech Connect (OSTI)

    Chu, T.

    1984-10-01

    This report describes research performed from June 1982 to October 1983 on the deposition of cadmium telluride films by direct combination of the cadmium and tellurium vapor on foreign substrates. Nearly stoichiometric p-type cadmium telluride films and arsenic-doped p-type films have been prepared reproducibly. Major efforts were directed to the deposition and characterization of heterojunction window materials, indium tin oxide, fluorine-doped tin oxide, cadmium oxide, and zinc oxide. A number of heterojunction solar cells were prepared, and the best thin-film ITO/CdTe solar cells had an AMl efficiency of about 7.2%. Zinc phosphide films were deposited on W/steel substrates by the reaction of zinc and phosphine in a hydrogen flow. Films without intentional doping had an electrical resistivity on the order of 10/sup 6/ ohm-cm, and this resistivity may be reduced to about 5 x 10/sup 4/ ohm-cm by adding hydrogen chloride or hydrogen bromide to the reaction mixture. Lower resistivity films were deposited by adding a controlled amount of silver nitrate solution on to the substrate surface. Major efforts were directed to the deposition of low-resistivity zinc selenide in order to prepare ZnSe/An/sub 3/P/sub 2/ heterojunction thin-film solar cells. However, zinc selenide films deposited by vacuum evaporation and chemical vapor deposition techniques were all of high resistivity.

  12. Thin film polycrystalline silicon: Promise and problems in displays and solar cells

    SciTech Connect (OSTI)

    Fonash, S.J.

    1995-08-01

    Thin film polycrystalline Si (poly-Si) with its carrier mobilities, potentially good stability, low intragrain defect density, compatibility with silicon processing, and ease of doping activation is an interesting material for {open_quotes}macroelectronics{close_quotes} applications such as TFTs for displays and solar cells. The poly-Si films needed for these applications can be ultra-thin-in the 500{Angstrom} to 1000{Angstrom} thickness range for flat panel display TFTs and in the 4{mu}m to 10{mu}m thickness range for solar cells. Because the films needed for these microelectronics applications can be so thin, an effective approach to producing the films is that of crystallizing a-Si precursor material. Unlike cast materials, poly-Si films made this way can be produced using low temperature processing. Unlike deposited poly-Si films, these crystallized poly-Si films can have grain widths that are much larger than the film thickness and almost atomically smooth surfaces. This thin film poly-Si crystallized from a-Si precursor films, and its promise and problems for TFTs and solar cells, is the focus of this discussion.

  13. NREL: Photovoltaics Research - Thin Film Photovoltaic Partnership Project

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed the United States to attain world leadership in this area of solar technology. Three national R&D teams focused on thin-film semiconductor materials: amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium

  14. Record Makes Thin-Film Solar Cell Competitive with Silicon Efficiency...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Record Makes Thin-Film Solar Cell Competitive with Silicon Efficiency March 24, 2008 Researchers at the U.S. Department of Energy's National Renewable Energy Laboratory have moved ...

  15. NREL and Company Researchers Team Up on Thin-Film Solar Cells...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NREL and Company Researchers Team Up on Thin-Film Solar Cells November 12, 2003 Golden, Colo. - An Austin, Tex.-based company is moving toward commercial production of advanced ...

  16. Efficiency calculations of thin-film GaAs solar cells on Si substrates

    SciTech Connect (OSTI)

    Yamaguchi, M.; Amano, C.

    1985-11-01

    Dislocation effect upon the efficiency of single-crystal thin-film AlGaAs-GaAs heteroface solar cells on Si substrates is analyzed. Solar-cell properties are calculated based on a simple model; in the model, dislocations act as recombination centers to reduce the minority-carrier diffusion length in each layer and increase the space-charge layer recombination current. Numerical analysis is also carried out to optimize thin-film AlGaAs-GaAs heteroface solar-cell structures. The fabrication of thin-film AlGaAs-GaAs heteroface solar cells with a practical efficiency larger than 18% on Si substrates appears possible if the dislocation density in the thin-film GaAs layer is less than 10/sup 6/ cm/sup -2/.

  17. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  18. Rapid Deposition Technology Holds the Key for the World's Largest Manufacturer of Thin-Film Solar Modules (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-08-01

    First Solar, Inc. has been collaborating with NREL since 1991, advancing its thin-film cadmium telluride solar technology to grow from a startup company to become one of the world's largest manufacturers of solar modules, and the world's largest manufacturer of thin-film solar modules.

  19. New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    | Department of Energy GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Deputy Director, Solar Energy Technologies Office Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will

  20. Processing and modeling issues for thin-film solar cell devices: Annual subcontract report, January 16, 1995 -- January 15, 1996

    SciTech Connect (OSTI)

    Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Eser, E.; Hegedus, S.S.; McCandless, B.E.; Meyers, P.V.; Shafarman, W.N.

    1996-08-01

    The overall mission of the Institute of Energy Conversion is the development of thin film photovoltaic cells, modules, and related manufacturing technology and the education of students and professionals in photovoltaic technology. The objectives of this four-year NREL subcontract are to advance the state of the art and the acceptance of thin film PV modules in the areas of improved technology for thin film deposition, device fabrication, and material and device characterization and modeling, relating to solar cells based on CuInSe{sub 2} and its alloys, on a-Si and its alloys, and on CdTe. In the area of CuInSe{sub 2} and its alloys, EEC researchers have produced CuIn{sub 1-x}GaxSe{sub 2} films by selenization of elemental and alloyed films with H{sub 2}Se and Se vapor and by a wide variety of process variations employing co-evaporation of the elements. Careful design, execution and analysis of these experiments has led to an improved understanding of the reaction chemistry involved, including estimations of the reaction rate constants. Investigation of device fabrication has also included studies of the processing of the Mo, US and ZnO deposition parameters and their influence on device properties. An indication of the success of these procedures was the fabrication of a 15% efficiency CuIn{sub 1-x}GaxSe{sub 2} solar cell.

  1. Efficiency considerations for polycrystalline GaAs thin-film solar cells

    SciTech Connect (OSTI)

    Yamaguchi, M.; Itoh, Y.

    1986-07-01

    The effect of grain boundaries upon the efficiency of polycrystalline GaAs thin-film solar cells is analyzed. Solar-cell properties are calculated on a simple model where grain boundaries act as recombination centers to reduce the minority-carrier diffusion length in the solar cell's active layer and increase the space-charge layer recombination current. An effective diffusion length is expressed in terms of grain size, allowing the calculation of short-circuit current density and open-circuit voltage. Excellent agreement is obtained between theory and experiment. The fabrication of thin-film GaAs solar cells with an efficiency greater than 18% appears to be possible if the grain size in the thin-film GaAs layer with thickness of 3 ..mu..m is larger than 1000 ..mu..m.

  2. Electrochemical solar cells using CdSe thin film electrodes

    SciTech Connect (OSTI)

    Xiao, Xu-Rui; Tien, H.Ti.

    1983-01-01

    Electrochemical photocells consisting of a CdSe thin film anode and a Pt cathode immersed in 1M Na/sub 2/S-NaOH-S solution have been studied. CdSe thin films were formed on Ti, Cr, Mo, SnO/sub 2/, glassy carbon, and graphite substrates by coating an aqueous mixture of CdSe, ZnCl/sub 2/, and surfactant, subsequently sintering at 400/sup 0/-500/sup 0/C in air. The current-voltage (I-V) relations, output power efficiency, open-circuit voltage, and short-circuit current were measured. Seven percent power conversion efficiency was obtained at 20 mW/cm/sup 2/ light intensity after photoetching. The monochromatic I-V curves were analyzed.

  3. CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Accomplishments (Conference) | SciTech Connect CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments Citation Details In-Document Search Title: CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional

  4. Thin-film flat-plate solar collectors for low-cost manufacture and installation

    SciTech Connect (OSTI)

    Andrews, J.W.; Wilhelm, W.G.

    1980-03-01

    A flat-plate solar energy collector design using thin-film plastics in both the absorber and glazing is described. The design approach proceeded in two steps. First, cost constraints on solar collectors were determined using reasonable economic projections. Second, engineering was applied only to those ideas which had hope of falling within those cost boundaries. The use of thin-film plastics appeared most attractive according to these criteria. The nature of the marketing and distribution network can be expected to have a strong impact on the final installed cost of the collector; the proposed design has characteristics which could make possible a reduced price markup.

  5. Method of forming particulate materials for thin-film solar cells

    DOE Patents [OSTI]

    Eberspacher, Chris; Pauls, Karen Lea

    2004-11-23

    A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

  6. Optical and structural properties of sputtered CdS films for thin film solar cell applications

    SciTech Connect (OSTI)

    Kim, Donguk; Park, Young; Kim, Minha; Choi, Youngkwan; Park, Yong Seob; Lee, Jaehyoeng

    2015-09-15

    Graphical abstract: Photo current–voltage curves (a) and the quantum efficiency (QE) (b) for the solar cell with CdS film grown at 300 °C. - Highlights: • CdS thin films were grown by a RF magnetron sputtering method. • Influence of growth temperature on the properties of CdS films was investigated. • At higher T{sub g}, the crystallinity of the films improved and the grains enlarged. • CdS/CdTe solar cells with efficiencies of 9.41% were prepared at 300 °C. - Abstract: CdS thin films were prepared by radio frequency magnetron sputtering at various temperatures. The effects of growth temperature on crystallinity, surface morphology and optical properties of the films were characterized with X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectra, UV–visible spectrophotometry, and photoluminescence (PL) spectra. As the growth temperature was increased, the crystallinity of the sputtered CdS films was improved and the grains were enlarged. The characteristics of CdS/CdTe thin film solar cell appeared to be significantly influenced by the growth temperature of the CdS films. Thin film CdS/CdTe solar cells with efficiencies of 9.41% were prepared at a growth temperature of 300 °C.

  7. NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-09-01

    Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

  8. Novel wide band gap materials for highly efficient thin film tandem solar cells

    SciTech Connect (OSTI)

    Brian E. Hardin, Stephen T. Connor, Craig H. Peters

    2012-06-11

    Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PVâ??s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a

  9. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells

    SciTech Connect (OSTI)

    Chu, T.L. )

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  10. Real time intelligent process control system for thin film solar cell manufacturing

    SciTech Connect (OSTI)

    George Atanasoff

    2010-10-29

    This project addresses the problem of lower solar conversion efficiency and waste in the typical solar cell manufacturing process. The work from the proposed development will lead toward developing a system which should be able to increase solar panel conversion efficiency by an additional 12-15% resulting in lower cost panels, increased solar technology adoption, reduced carbon emissions and reduced dependency on foreign oil. All solar cell manufacturing processes today suffer from manufacturing inefficiencies that currently lead to lower product quality and lower conversion efficiency, increased product cost and greater material and energy consumption. This results in slower solar energy adoption and extends the time solar cells will reach grid parity with traditional energy sources. The thin film solar panel manufacturers struggle on a daily basis with the problem of thin film thickness non-uniformity and other parameters variances over the deposited substrates, which significantly degrade their manufacturing yield and quality. Optical monitoring of the thin films during the process of the film deposition is widely perceived as a necessary step towards resolving the non-uniformity and non-homogeneity problem. In order to enable the development of an optical control system for solar cell manufacturing, a new type of low cost optical sensor is needed, able to acquire local information about the panel under deposition and measure its local characteristics, including the light scattering in very close proximity to the surface of the film. This information cannot be obtained by monitoring from outside the deposition chamber (as traditional monitoring systems do) due to the significant signal attenuation and loss of its scattering component before the reflected beam reaches the detector. In addition, it would be too costly to install traditional external in-situ monitoring systems to perform any real-time monitoring over large solar panels, since it would require

  11. Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate

    DOE Patents [OSTI]

    Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

    2006-05-30

    A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

  12. Thin-film solar cell fabricated on a flexible metallic substrate

    DOE Patents [OSTI]

    Tuttle, John R.; Noufi, Rommel; Hasoon, Falah S.

    2006-05-30

    A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

  13. Low-Cost Light Weigh Thin Film Solar Concentrators | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    313ganapathi.pdf (6.65 MB) More Documents & Publications Low-Cost, Lightweight Solar Concentrators - FY13 Q1 Low-Cost, Lightweight Solar Concentrators FY13 Q2

  14. Characterization of the Electronic and Chemical Structure at the Thin Film Solar Cell Interfaces: June 2005 -- June 2009

    SciTech Connect (OSTI)

    Heske, C.

    2009-09-01

    Study using photoelectron spectroscopy, inverse photoemission, and X-ray absorption and emission to derive the electronic structure of interfaces in CIGSS and CdTe thin-film solar cells.

  15. Low-Cost Light Weigh Thin Film Solar Concentrators

    Broader source: Energy.gov [DOE]

    This presentation was delivered at the SunShot Concentrating Solar Power (CSP) Program Review 2013, held April 23–25, 2013 near Phoenix, Arizona.

  16. PEDOT:PSS emitters on multicrystalline silicon thin-film absorbers for hybrid solar cells

    SciTech Connect (OSTI)

    Junghanns, Marcus; Plentz, Jonathan Andrä, Gudrun; Gawlik, Annett; Höger, Ingmar; Falk, Fritz

    2015-02-23

    We fabricated an efficient hybrid solar cell by spin coating poly(3,4-ethylene-dioxythiophene):polystyrenesulfonate (PEDOT:PSS) on planar multicrystalline Si (mc-Si) thin films. The only 5 μm thin Si absorber layers were prepared by diode laser crystallization of amorphous Si deposited by electron beam evaporation on glass. On these absorber layers, we studied the effect of SiO{sub x} and Al{sub 2}O{sub 3} terminated Si surfaces. The short circuit density and power conversion efficiency (PCE) of the mc-Si/Al{sub 2}O{sub 3}/PEDOT:PSS solar cell increase from 20.6 to 25.4 mA/cm{sup 2} and from 7.3% to 10.3%, respectively, as compared to the mc-Si/SiO{sub x}/PEDOT:PSS cell. Al{sub 2}O{sub 3} lowers the interface recombination and improves the adhesion of the polymer film on the hydrophobic mc-Si thin film. Open circuit voltages up to 604 mV were reached. This study demonstrates the highest PCE so far of a hybrid solar cell with a planar thin film Si absorber.

  17. Cross-sectional electrostatic force microscopy of thin-film solar cells

    SciTech Connect (OSTI)

    Ballif, C.; Moutinho, H. R.; Al-Jassim, M. M.

    2001-01-15

    In a recent work, we showed that atomic force microscopy (AFM) is a powerful technique to image cross sections of polycrystalline thin films. In this work, we apply a modification of AFM, namely, electrostatic force microscopy (EFM), to investigate the electronic properties of cleaved II--VI and multijunction thin-film solar cells. We cleave the devices in such a way that they are still working with their nominal photovoltaic efficiencies and can be polarized for the measurements. This allows us to differentiate between surface effects (work function and surface band bending) and bulk device properties. In the case of polycrystalline CdTe/CdS/SnO{sub 2}/glass solar cells, we find a drop of the EFM signal in the area of the CdTe/CdS interface ({+-}50 nm). This drop varies in amplitude and sign according to the applied external bias and is compatible with an n-CdS/p-CdTe heterojunction model, thereby invalidating the possibility of a deeply buried n-p CdTe homojunction. In the case of a triple-junction GaInP/GaAs/Ge device, we observe a variation of the EFM signal linked to both the material work-function differences and to the voltage bias applied to the cell. We attempt a qualitative explanation of the results and discuss the implications and difficulties of the EFM technique for the study of such thin-film devices.

  18. Thin film solar cell configuration and fabrication method

    DOE Patents [OSTI]

    Menezes, Shalini

    2009-07-14

    A new photovoltaic device configuration based on an n-copper indium selenide absorber and a p-type window is disclosed. A fabrication method to produce this device on flexible or rigid substrates is described that reduces the number of cell components, avoids hazardous materials, simplifies the process steps and hence the costs for high volume solar cell manufacturing.

  19. Radiation resistance of thin-film solar cells for space photovoltaic power

    SciTech Connect (OSTI)

    Woodyard, J.R.; Landis, G.A.

    1991-01-01

    Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

  20. Optimal design of one-dimensional photonic crystal back reflectors for thin-film silicon solar cells

    SciTech Connect (OSTI)

    Chen, Peizhuan; Hou, Guofu Zhang, Jianjun Zhang, Xiaodan; Zhao, Ying

    2014-08-14

    For thin-film silicon solar cells (TFSC), a one-dimensional photonic crystal (1D PC) is a good back reflector (BR) because it increases the total internal reflection at the back surface. We used the plane-wave expansion method and the finite difference time domain (FDTD) algorithm to simulate and analyze the photonic bandgap (PBG), the reflection and the absorption properties of a 1D PC and to further explore the optimal 1D PC design for use in hydrogenated amorphous silicon (a-Si:H) solar cells. With identified refractive index contrast and period thickness, we found that the PBG and the reflection of a 1D PC are strongly influenced by the contrast in bilayer thickness. Additionally, light coupled to the top three periods of the 1D PC and was absorbed if one of the bilayers was absorptive. By decreasing the thickness contrast of the absorptive layer relative to the non-absorptive layer, an average reflectivity of 96.7% was achieved for a 1D PC alternatively stacked with a-Si:H and SiO{sub 2} in five periods. This reflectivity was superior to a distributed Bragg reflector (DBR) structure with 93.5% and an Ag film with 93.4%. n-i-p a-Si:H solar cells with an optimal 1D PC-based BR offer a higher short-circuit current density than those with a DBR-based BR or an AZO/Ag-based BR. These results provide new design rules for photonic structures in TFSC.

  1. Thin film GaAs solar cells on glass substrates by epitaxial liftoff

    SciTech Connect (OSTI)

    Lee, X.Y.; Goertemiller, M.; Boroditsky, M.; Ragan, R.; Yablonovitch, E.

    1997-02-01

    In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

  2. Development of Thin Film Silicon Solar Cell Using Inkjet Printed Silicon and Other Inkjet Processes: Cooperative Research and Development Final Report, CRADA Number CRD-07-260

    SciTech Connect (OSTI)

    Sopori, B.

    2012-04-01

    The cost of silicon photovoltaics (Si-PV) can be greatly lowered by developing thin-film crystalline Si solar cells on glass or an equally lower cost substrate. Typically, Si film is deposited by thermal evaporation, plasma enhanced chemical vapor deposition, and sputtering. NREL and Silexos have worked under a CRADA to develop technology to make very low cost solar cells using liquid organic precursors. Typically, cyclopentasilane (CPS) is deposited on a glass substrate and then converted into an a-Si film by UV polymerization followed by low-temperature optical process that crystallizes the amorphous layer. This technique promises to be a very low cost approach for making a Si film.

  3. Advanced processing technology for high-efficiency, thin-film CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, 1 March 1993--28 February 1994

    SciTech Connect (OSTI)

    Morel, D.L.; Ferekides, C.S.

    1994-07-01

    This annual report details activities in research on advanced processing technology for high-effiency, thin-film solar cells.

  4. Superhydrophobic Thin Film Coatings - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Thermal Solar Thermal Solar Photovoltaic Solar Photovoltaic Industrial Technologies ... Find More Like This Return to Search Superhydrophobic Thin Film Coatings Oak Ridge ...

  5. a-Si{sub x}C{sub 1?x}:H thin films with subnanometer surface roughness for biological applications

    SciTech Connect (OSTI)

    Herrera-Celis, Jos Reyes-Betanzo, Claudia Itzmoyotl-Toxqui, Adrin; Ordua-Daz, Abdu Prez-Coyotl, Ana

    2015-09-15

    The characterization of a-Si{sub x}C{sub 1?x}:H thin films by plasma-enhanced chemical vapor deposition with high hydrogen dilution for biological applications is addressed. A root mean square roughness less than 1?nm was measured via atomic force microscopy for an area of 25??m{sup 2}. Structural analysis was done using Fourier transform infrared spectroscopy in the middle infrared region. It was found that under the deposition conditions, the formation of SiC bonds is promoted. Electrical dark conductivity measurements were performed to evaluate the effect of high hydrogen dilution and to find the relation between carrier transport properties and the structural arrangement. Conductivities of the order of 10{sup ?7} to 10{sup ?9} S/cm at room temperature for methanesilane gas flow ratio from 0.35 to 0.85 were achieved, respectively. UV-visible spectra were used to obtain the optical band gap and the Tauc parameter. Optical band gap as wide as 3.55?eV was achieved in the regime of high carbon incorporation. Accordingly, deposition under low power density and high hydrogen dilution reduces the roughness, improves the structure of the network, and stabilizes the film properties as a greater percentage of carbon is incorporated. The biofunctionalization of a-Si{sub x}C{sub 1?x}:H surfaces with NH{sub 2}-terminated self-assembled monolayers was obtained through silanization with 3-aminopropyltrimethoxysilane. This knowledge opens a window for the inclusion of these a-Si{sub x}C{sub 1?x}:H thin films in devices such as biosensors.

  6. Light trapping in thin-film solar cells measured by Raman spectroscopy

    SciTech Connect (OSTI)

    Ledinský, M.; Moulin, E.; Bugnon, G.; Meillaud, F.; Ballif, C.; Ganzerová, K.; Vetushka, A.; Fejfar, A.

    2014-09-15

    In this study, Raman spectroscopy is used as a tool to determine the light-trapping capability of textured ZnO front electrodes implemented in microcrystalline silicon (μc-Si:H) solar cells. Microcrystalline silicon films deposited on superstrates of various roughnesses are characterized by Raman micro-spectroscopy at excitation wavelengths of 442 nm, 514 nm, 633 nm, and 785 nm, respectively. The way to measure quantitatively and with a high level of reproducibility the Raman intensity is described in details. By varying the superstrate texture and with it the light trapping in the μc-Si:H absorber layer, we find significant differences in the absolute Raman intensity measured in the near infrared wavelength region (where light trapping is relevant). A good agreement between the absolute Raman intensity and the external quantum efficiency of the μc-Si:H solar cells is obtained, demonstrating the validity of the introduced method. Applications to thin-film solar cells, in general, and other optoelectronic devices are discussed.

  7. Electrophoretic deposited TiO2 pigment-based back reflectors for thin film solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bills, Braden; Morris, Nathan; Dubey, Mukul; Wang, Qi; Fan, Qi Hua

    2015-01-16

    Highly reflective coatings with strong light scattering effect have many applications in optical components and optoelectronic devices. This paper reports titanium dioxide (TiO2) pigment-based reflectors that have 2.5 times higher broadband diffuse reflection than commercially produced aluminum or silver based reflectors and result in efficiency enhancements of a single-junction amorphous Si solar cell. Electrophoretic deposition is used to produce pigment-based back reflectors with high pigment density, controllable film thickness and site-specific deposition. Electrical conductivity of the pigment-based back reflectors is improved by creating electrical vias throughout the pigment-based back reflector by making holes using an electrical discharge / dielectric breakdownmore » approach followed by a second electrophoretic deposition of conductive nanoparticles into the holes. While previous studies have demonstrated the use of pigment-based back reflectors, for example white paint, on glass superstrate configured thin film Si solar cells, this work presents a scheme for producing pigment-based reflectors on complex shape and flexible substrates. Finally, mechanical durability and scalability are demonstrated on a continuous electrophoretic deposition roll-to-roll system which has flexible metal substrate capability of 4 inch wide and 300 feet long.« less

  8. InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

    SciTech Connect (OSTI)

    Sang, Liwen; Liao, Meiyong; Koide, Yasuo; Sumiya, Masatomo

    2015-03-14

    In{sub x}Ga{sub 1−x}N, with the tunable direct bandgaps from ultraviolet to near infrared region, offers a promising candidate for the high-efficiency next-generation thin-film photovoltaic applications. Although the adoption of thick InGaN film as the active region is desirable to obtain efficient light absorption and carrier collection compared to InGaN/GaN quantum wells structure, the understanding on the effect from structural design is still unclear due to the poor-quality InGaN films with thickness and difficulty of p-type doping. In this paper, we comprehensively investigate the effects from film epitaxy, doping, and device structural design on the performances of the InGaN-based solar cells. The high-quality InGaN thick film is obtained on AlN/sapphire template, and p-In{sub 0.08}Ga{sub 0.92}N is achieved with a high hole concentration of more than 10{sup 18 }cm{sup −3}. The dependence of the photovoltaic performances on different structures, such as active regions and p-type regions is analyzed with respect to the carrier transport mechanism in the dark and under illumination. The strategy of improving the p-i interface by using a super-thin AlN interlayer is provided, which successfully enhances the performance of the solar cells.

  9. Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2

    DOE Patents [OSTI]

    Mickelsen, R.A.; Chen, W.S.

    1982-06-15

    An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.

  10. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

    DOE Patents [OSTI]

    Mickelsen, Reid A.; Chen, Wen S.

    1985-08-13

    An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

  11. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

    DOE Patents [OSTI]

    Mickelsen, Reid A.; Chen, Wen S.

    1982-01-01

    An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

  12. Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}

    DOE Patents [OSTI]

    Mickelsen, R.A.; Chen, W.S.

    1985-08-13

    An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

  13. Sputtered Thin Film Photovoltaics - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Photovoltaic Solar Photovoltaic Find More Like This Return to Search Sputtered Thin Film Photovoltaics Naval Research Laboratory Contact NRL About This Technology ...

  14. Novel R2R Manufacturable Photonic-Enhanced Thin Film Solar Cells; January 28, 2010 -- January 31, 2011

    SciTech Connect (OSTI)

    Slafer, D.; Dalal, V.

    2012-03-01

    Final subcontract report for PV Incubator project 'Novel R2R Manufacturable Photonic-Enhanced Thin Film Solar Cells.' The goal of this program was to produce tandem Si cells using photonic bandgap enhancement technology developed at ISU and Lightwave Power that would have an NREL-verified efficiency of 7.5% on 0.25 cm{sup 2} area tandem junction cell on plastic substrates. This goal was met and exceeded within the timeframe and budget of the program. On smaller area cells, the efficiency was even higher, {approx}9.5% (not verified by NREL). Appropriate polymers were developed to fabricate photonic and plasmonic devices on stainless steel, Kapton and PEN substrates. A novel photonic-plasmon structure was developed which shows a promise of improving light absorption in thin film cells, a better light absorption than by any other scheme.

  15. Development of Commercial Technology for Thin Film Silicon Solar Cells on Glass: Cooperative Research and Development Final Report, CRADA Number CRD-07-209

    SciTech Connect (OSTI)

    Sopori, B.

    2013-03-01

    NREL has conducted basic research relating to high efficiency, low cost, thin film silicon solar cell design and the method of making solar cells. Two patents have been issued to NREL in the above field. In addition, specific process and metrology tools have been developed by NREL. Applied Optical Sciences Corp. (AOS) has expertise in the manufacture of solar cells and has developed its own unique concentrator technology. AOS wants to complement its solar cell expertise and its concentrator technology by manufacturing flat panel thin film silicon solar cell panels. AOS wants to take NREL's research to the next level, using it to develop commercially viable flat pane, thin film silicon solar cell panels. Such a development in equipment, process, and metrology will likely produce the lowest cost solar cell technology for both commercial and residential use. NREL's fundamental research capability and AOS's technology and industrial background are complementary to achieve this product development.

  16. Damp-Heat Induced Degradation of Transparent Conducting Oxides for Thin Film Solar Cells (Presentation)

    SciTech Connect (OSTI)

    Pern, J.; Noufi, R.; Li, X.; DeHart, C.; To, B.

    2008-05-01

    The objectives are: (1) To achieve a high long-term performance reliability for the thin-film CIGS PV modules with more stable materials, device structure designs, and moisture-resistant encapsulation materials and schemes; (2) to evaluate the DH stability of various transparent conducting oxides (TCOs); (3) to identify the degradation mechanisms and quantify degradation rates; (4) to seek chemical and/or physical mitigation methods, and explore new materials. It's important to note that direct exposure to DH represents an extreme condition that a well-encapsulated thin film PV module may never experience.

  17. Low work function, stable thin films

    DOE Patents [OSTI]

    Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

    2000-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  18. Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

    SciTech Connect (OSTI)

    Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha; Louis, Godfrey; Vijayakumar, K. P.; Kumar, K. Rajeev

    2015-06-24

    In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin film solar cells.

  19. High-efficiency, thin-film solar cells. Annual subcontractor report, 1 July 1991--30 June 1992

    SciTech Connect (OSTI)

    Gale, R.P.

    1994-01-01

    This report describes work on a 3-year research program to investigate thin-film GaAs/GaInP cells using the cleavage of lateral epitaxial film for transfer (CLEFT) technique, and to determine the process to enable overgrowth of GaAs films using organometallic chemistry. Application of the CLEFT thin-film technique to GaInP/GaAs solar cells and organometallic overgrowth was investigated. A problem of alloy contamination was identified and controlled, leading to higher quality layers. Solar cell structures were grown and fabricated using previously determined growth parameters for GaAs and GaInP. With the improved materials developed significant improvements were made in solar cell performance. Conditions for in-situ overgrowth by organometallic chemical vapor deposition (OMCVD) were determined and continuous GaAs layers were grown over a separation mask layer. The layers were successfully separated from their substrate using the CLEFT process, demonstrating the application of overgrowth using OM chemistry with HCl.

  20. Final project report - CRADA with United Solar Technologies and Pacific Northwest Laboratory (PNL-021): Thin film materials for low-cost high performance solar concentrators

    SciTech Connect (OSTI)

    Martin, P.M.; Affinito, J.D.; Gross, M.E.; Bennett, W.D.

    1995-03-01

    The objectives of this project were as follows: To develop and evaluate promising low-cost dielectric and polymer-protected thin-film reflective metal coatings to be applied to preformed continuously-curved solar reflector panels to enhance their solar reflectance, and to demonstrate protected solar reflective coatings on preformed solar concentrator panels. The opportunity for this project arose from a search by United Solar Technologies (UST) for organizations and facilities capable of applying reflective coatings to large preformed panels. PNL was identified as being uniquely qualified to participate in this collaborative project.

  1. Atomic layer deposition grown MO{sub x} thin films for solar water splitting: Prospects and challenges

    SciTech Connect (OSTI)

    Singh, Trilok; Lehnen, Thomas; Leuning, Tessa; Mathur, Sanjay

    2015-01-15

    The magnitude of energy challenge not only calls for efficient devices but also for abundant, inexpensive, and stable photoactive materials that can enable efficient light harvesting, charge separation and collection, as well as chemical transformations. Photoelectrochemical systems based on semiconductor materials have the possibility to transform solar energy directly into chemical energy the so-called “solar hydrogen.” The current challenge lies in the harvesting of a larger fraction of electromagnetic spectrum by enhancing the absorbance of electrode materials. In this context, atomically precise thin films of metal oxide semiconductors and their multilayered junctions are promising candidates to integrate high surface areas with well-defined electrode–substrate interface. Given its self-limited growth mechanism, the atomic layer deposition (ALD) technique offers a wide range of capabilities to deposit and modify materials at the nanoscale. In addition, it opens new frontiers for developing precursor chemistry that is inevitable to design new processes. Herein, the authors review the properties and potential of metal oxide thin films deposited by ALD for their application in photoelectrochemical water splitting application. The first part of the review covers the basics of ALD processes followed by a brief discussion on the electrochemistry of water splitting reaction. The second part focuses on different MO{sub x} films deposited by atomic layer deposition for water splitting applications; in this section, The authors discuss the most explored MO{sub x} semiconductors, namely, Fe{sub 2}O{sub 3}, TiO{sub 2}, WO{sub 3}, and ZnO, as active materials and refer to their application as protective coatings, conductive scaffolds, or in heterojunctions. The third part deals with the current challenges and future prospects of ALD processed MO{sub x} thin films for water splitting reactions.

  2. Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

    SciTech Connect (OSTI)

    Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z.

    2015-04-24

    One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×10{sup 16} atoms/cm{sup 3}) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

  3. Investigation of blister formation in sputtered Cu{sub 2}ZnSnS{sub 4} absorbers for thin film solar cells

    SciTech Connect (OSTI)

    Bras, Patrice; Sterner, Jan; Platzer-Björkman, Charlotte

    2015-11-15

    Blister formation in Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films sputtered from a quaternary compound target is investigated. While the thin film structure, composition, and substrate material are not correlated to the blister formation, a strong link between sputtering gas entrapment, in this case argon, and blistering effect is found. It is shown that argon is trapped in the film during sputtering and migrates to locally form blisters during the high temperature annealing. Blister formation in CZTS absorbers is detrimental for thin film solar cell fabrication causing partial peeling of the absorber layer and potential shunt paths in the complete device. Reduced sputtering gas entrapment, and blister formation, is seen for higher sputtering pressure, higher substrate temperature, and change of sputtering gas to larger atoms. This is all in accordance with previous publications on blister formation caused by sputtering gas entrapment in other materials.

  4. Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby

    DOE Patents [OSTI]

    Wu, Xuanzhi; Sheldon, Peter

    2000-01-01

    A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

  5. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991

    SciTech Connect (OSTI)

    Chu, T.L.

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  6. Thin film photovoltaic device

    DOE Patents [OSTI]

    Catalano, Anthony W.; Bhushan, Manjul

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  7. Thin film photovoltaic device

    DOE Patents [OSTI]

    Catalano, A.W.; Bhushan, M.

    1982-08-03

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  8. Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations

    SciTech Connect (OSTI)

    Bozzola, A. Kowalczewski, P.; Andreani, L. C.

    2014-03-07

    Thin-film solar cells based on silicon have emerged as an alternative to standard thick wafers technology, but they are less efficient, because of incomplete absorption of sunlight, and non-radiative recombinations. In this paper, we focus on the case of crystalline silicon (c-Si) devices, and we present a full analytic electro-optical model for p-n junction solar cells with Lambertian light trapping. This model is validated against numerical solutions of the drift-diffusion equations. We use this model to investigate the interplay between light trapping, and bulk and surface recombination. Special attention is paid to surface recombination processes, which become more important in thinner devices. These effects are further amplified due to the textures required for light trapping, which lead to increased surface area. We show that c-Si solar cells with thickness of a few microns can overcome 20% efficiency and outperform bulk ones when light trapping is implemented. The optimal device thickness in presence of light trapping, bulk and surface recombination, is quantified to be in the range of 1080??m, depending on the bulk quality. These results hold, provided the effective surface recombination is kept below a critical level of the order of 100?cm/s. We discuss the possibility of meeting this requirement, in the context of state-of-the-art techniques for light trapping and surface passivation. We show that our predictions are within the capability of present day silicon technologies.

  9. Thin films of mixed metal compounds

    SciTech Connect (OSTI)

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  10. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report, 20 March 1995--19 March 1996

    SciTech Connect (OSTI)

    Trefny, J.U.; Mao, D.

    1997-04-01

    The objective of this project is to develop improved processes for fabricating CdTe/CdS polycrystalline thin-film solar cells. Researchers used electrodeposition to form CdTe; electrodeposition is a non-vacuum, low-cost technique that is attractive for economic, large-scale production. During the past year, research and development efforts focused on several steps that are most critical to the fabricating high-efficiency CdTe solar cells. These include the optimization of the CdTe electrodeposition process, the effect of pretreatment of CdS substrates, the post-deposition annealing of CdTe, and back-contact formation using Cu-doped ZnTe. Systematic investigations of these processing steps have led to a better understanding and improved performance of the CdTe-based cells. Researchers studied the structural properties of chemical-bath-deposited CdS thin films and their growth mechanisms by investigating CdS samples prepared at different deposition times; investigated the effect of CdCl{sub 2} treatment of CdS films on the photovoltaic performance of CdTe solar cells; studied Cu-doped ZnTe as a promising material for forming stable, low-resistance contacts to the p-type CdTe; and investigated the effect of CdTe and CdS thickness on the photovoltaic performance of the resulting cells. As a result of their systematic investigation and optimization of the processing conditions, researchers improved the efficiency of CdTe/CdS cells using ZnTe back-contact and electrodeposited CdTe. The best CdTe/CdS cell exhibited a V{sub oc} of 0.778 V, a J{sub sc} of 22.4 mA/cm{sup 2}, a FF of 74%, and an efficiency of 12.9% (verified at NREL). In terms of individual parameters, researchers obtained a V{sub oc} over 0.8 V and a FF of 76% on other cells.

  11. Institute of Photo Electronic Thin Film Devices and Technology...

    Open Energy Info (EERE)

    Place: Tianjin Municipality, China Zip: 300071 Sector: Solar Product: A thin-film solar cell research institute in China. References: Institute of Photo-Electronic Thin...

  12. Electrophoretic deposited TiO2 pigment-based back reflectors for thin film solar cells

    SciTech Connect (OSTI)

    Bills, Braden; Morris, Nathan; Dubey, Mukul; Wang, Qi; Fan, Qi Hua

    2015-01-16

    Highly reflective coatings with strong light scattering effect have many applications in optical components and optoelectronic devices. This paper reports titanium dioxide (TiO2) pigment-based reflectors that have 2.5 times higher broadband diffuse reflection than commercially produced aluminum or silver based reflectors and result in efficiency enhancements of a single-junction amorphous Si solar cell. Electrophoretic deposition is used to produce pigment-based back reflectors with high pigment density, controllable film thickness and site-specific deposition. Electrical conductivity of the pigment-based back reflectors is improved by creating electrical vias throughout the pigment-based back reflector by making holes using an electrical discharge / dielectric breakdown approach followed by a second electrophoretic deposition of conductive nanoparticles into the holes. While previous studies have demonstrated the use of pigment-based back reflectors, for example white paint, on glass superstrate configured thin film Si solar cells, this work presents a scheme for producing pigment-based reflectors on complex shape and flexible substrates. Finally, mechanical durability and scalability are demonstrated on a continuous electrophoretic deposition roll-to-roll system which has flexible metal substrate capability of 4 inch wide and 300 feet long.

  13. Effect of dopent on the structural and optical properties of ZnS thin film as a buffer layer in solar cell application

    SciTech Connect (OSTI)

    Vashistha, Indu B. Sharma, S. K.; Sharma, Mahesh C.; Sharma, Ramphal

    2015-08-28

    In order to find the suitable alternative of toxic CdS buffer layer, deposition of pure ZnS and doped with Al by chemical bath deposition method have been reported. Further as grown pure and doped thin films have been annealed at 150°C. The structural and surface morphological properties have been characterized by X-Ray diffraction (XRD) and Atomic Force Microscope (AFM).The XRD analysis shows that annealed thin film has been polycrystalline in nature with sphalerite cubic crystal structure and AFM images indicate increment in grain size as well as growth of crystals after annealing. Optical measurement data give band gap of 3.5 eV which is ideal band gap for buffer layer for solar cell suggesting that the obtained ZnS buffer layer is suitable in a low-cost solar cell.

  14. A NOVEL LOW THERMAL BUDGET THIN-FILM POLYSILICON FABRICATION PROCESS FOR LARGE-AREA, HIGH-THROUGHPUT SOLAR CELL PRODUCTION

    SciTech Connect (OSTI)

    Yue Kuo

    2010-08-15

    A novel thin-film poly-Si fabrication process has been demonstrated. This low thermal budget process transforms the single- and multi-layer amorphous silicon thin films into a poly-Si structure in one simple step over a pulsed rapid thermal annealing process with the enhancement of an ultrathin Ni layer. The complete poly-Si solar cell was fabricated in a short period of time without deteriorating the underneath glass substrate. The unique vertical crystallization process including the mechanism is discussed. Influences of the dopant type and process parameters on crystal structure will be revealed. The poly-Si film structure has been proved using TEM, XRD, Raman, and XPS methods. The poly-Si solar cell structure and the performance have been examined. In principle, the new process is potentially applicable to produce large-area thin-film poly-Si solar cells at a high throughput and low cost. A critical issue in this process is to prevent the excessive dopant diffusion during crystallization. Process parameters and the cell structure have to be optimized to achieve the production goal.

  15. Performance enhancement of thin film silicon solar cells based on distributed Bragg reflector and diffraction grating

    SciTech Connect (OSTI)

    Dubey, R. S.; Saravanan, S.; Kalainathan, S.

    2014-12-15

    The influence of various designing parameters were investigated and explored for high performance solar cells. Single layer grating based solar cell of 50 μm thickness gives maximum efficiency up to 24 % whereas same efficiency is achieved with the use of three bilayers grating based solar cell of 30 μm thickness. Remarkably, bilayer grating based solar cell design not only gives broadband absorption but also enhancement in efficiency with reduced cell thickness requirement. This absorption enhancement is attributed to the high reflection and diffraction from DBR and grating respectively. The obtained short-circuit current were 29.6, 32.9, 34.6 and 36.05 mA/cm{sup 2} of 5, 10, 20 and 30 μm cell thicknesses respectively. These presented designing efforts would be helpful to design and realize new generation of solar cells.

  16. (Sr,Ba)(Si,Ge){sub 2} for thin-film solar-cell applications: First-principles study

    SciTech Connect (OSTI)

    Kumar, Mukesh E-mail: mkgarg79@gmail.com; Umezawa, Naoto; Imai, Motoharu

    2014-05-28

    In order to meet the increasing demand for electric power generation from solar energy conversion, the development of efficient light absorber materials has been awaited. To this end, the electronic and optical properties of advanced alkaline-earth-metals disilicides and digermanides (SrSi{sub 2}, BaSi{sub 2}, SrGe{sub 2}, and BaGe{sub 2}) are studied by means of the density functional theory using HSE06 exchange-correlation energy functional. Our calculations show that all these orthorhombic structured compounds have fundamental indirect band gaps in the range E{sub g} ? 0.891.25 eV, which is suitable for solar cell applications. The estimated lattice parameters and band gaps are in good agreement with experiments. Our calculations show that the electronic band structures of all four compounds are very similar except in the vicinity of the ?-point. The valence band of these compounds is made up by Si(Ge)-p states, whereas the conduction band is composed of Sr(Ba)-d states. Their band alignments are carefully determined by estimating the work function of each compound using slab model. The optical properties are discussed in terms of the complex dielectric function ?(?)?=??{sub 1}(?)?+?i?{sub 2}(?). The static and high-frequency dielectric constants are calculated, taking into account the ionic contribution. The absorption coefficient ?(?) demonstrates that a low energy dispersion of the conduction band, which results in a flat conduction band minimum, leads to large optical activity in these compounds. Therefore, alkaline-earth-metals disilicides and digermanides possess great potential as light absorbers for applications in thin-film solar cell technologies.

  17. Dye sensitized solar cell applications of CdTiO{sub 3}–TiO{sub 2} composite thin films deposited from single molecular complex

    SciTech Connect (OSTI)

    Ehsan, Muhammad Ali; Khaledi, Hamid; Pandikumar, Alagarsamy; Huang, Nay Ming; Arifin, Zainudin; Mazhar, Muhammad

    2015-10-15

    A heterobimetallic complex [Cd{sub 2}Ti{sub 4}(μ-O){sub 6}(TFA){sub 8}(THF){sub 6}]·1.5THF (1) (TFA=trifluoroacetato, THF=tetrahydrofuran) comprising of Cd:Ti (1:2) ratio was synthesized by a chemical reaction of cadmium (II) acetate with titanium (IV) isopropoxide and triflouroacetic acid in THF. The stoichiometry of (1) was recognized by single crystal X-ray diffraction, spectroscopic and elemental analyses. Thermal studies revealed that (1) neatly decomposes at 450 °C to furnish 1:1 ratio of cadmium titanate:titania composite oxides material. The thin films of CdTiO{sub 3}–TiO{sub 2} composite oxides were deposited at 550 °C on fluorine doped tin oxide coated conducting glass substrate in air ambient. The micro-structure, crystallinity, phase identification and chemical composition of microspherical architectured CdTiO{sub 3}–TiO{sub 2} composite thin film have been determined by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analysis. The scope of composite thin film having band gap of 3.1 eV was explored as photoanode for dye-sensitized solar cell application. - Graphical abstarct: Microspherical designed CdTiO{sub 3}–TiO{sub 2} composite oxides photoanode film has been fabricated from single source precursor [Cd{sub 2}Ti{sub 4}(μ-O){sub 6}(TFA){sub 8}(THF){sub 6}]·1.5THF via aerosol assisted chemical vapor deposition technique for dye sensitized solar cell application. - Highlights: • Synthesis and characterization of a heterobimetallic Cd–Ti complex. • Fabrication of CdTiO{sub 3}–TiO{sub 2} thin film photoelectrode. • Application as dye sensitized photoanode for solar application.

  18. Barrier Coatings for Thin Film Solar Cells: Final Subcontract Report, September 1, 2002 -- January 30, 2008

    SciTech Connect (OSTI)

    Olsen, L. C.

    2010-03-01

    This program has involved investigations of the stability of CdTe and copper-indium-gallium-diselenide (CIGS) solar cells under damp heat conditions and effects of barrier coatings.

  19. Light trapping in thin film solar cells using textured photonic crystal

    DOE Patents [OSTI]

    Yi, Yasha; Kimerling, Lionel C.; Duan, Xiaoman; Zeng, Lirong

    2009-01-27

    A solar cell includes a photoactive region that receives light. A photonic crystal is coupled to the photoactive region, wherein the photonic crystal comprises a distributed Bragg reflector (DBR) for trapping the light.

  20. Low-cost solar collectors using thin-film plastics absorbers and glazings

    SciTech Connect (OSTI)

    Wilhelm, W.G.

    1980-01-01

    The design, fabrication, performance, cost, and marketing of flat plate solar collectors using plastic absorbers and glazings are described. Manufacturing cost breakdowns are given for single-glazed and double-glazed collectors. (WHK)

  1. EPOD Solar Inc | Open Energy Information

    Open Energy Info (EERE)

    Inc Jump to: navigation, search Name: EPOD Solar Inc Place: Kelowna, British Columbia, Canada Zip: V1V 2L9 Sector: Solar Product: British Columbia-based thin-film a-Si PV maker as...

  2. Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor

    DOE Patents [OSTI]

    Dhere, Neelkanth G.; Kadam, Ankur A.

    2009-12-15

    A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.

  3. Thin films and solar cells of cadmium telluride and cadmium zinc telluride

    SciTech Connect (OSTI)

    Ferekides, C.S.

    1991-01-01

    The objectives of this dissertation are to investigate (1) the metalorganic chemical vapor deposition (MOCVD) and properties of cadmium telluride (CdTe) and cadmium zinc telluride (Cd(1-x)Zn(z)Te) films and junctions, and their potential application to solar cells, and (2) the fabrication and characterization of CdTe solar cells by the close spaced sublimation (CSS) technique. CdTe and Cd(1-x)Zn(x)Te films have been deposited by MOCVD on a variety of substrates at 300-400 C.The effect of the deposition parameters and post deposition heat treatments on the electrical, optical, and structural properties have been investigated. Heterojunctions of the configuration CdTe/transparent conducting semiconductor (TCS) and Cd(1-x)Zn(x)Te/TCS have been prepared and characterized. CdTe(MOCVD)/CdS and Cd(1-x)Zn(x)Te(E sub g = 1.65eV)/Cd(1-x)Zn(x)S solar cells with efficiencies of 9.9 percent and 2.4 percent, respectively have been fabricated. The as-deposited CdTe(MOCVD)/CdS junctions exhibited high dark current densities due to deflects at the interface associated with small grain size. No effective post-deposition heat treatment has been developed. CdTe/CdS solar cells have also been fabricated by the close spaced sublimation (CSS). Significant improvements in material and processing have been made, and in collaboration with fellow researchers an AM1.5 conversion efficiency of 13.4 percent has been demonstrated, the highest efficiency ever measured for such devices. The highest conversion efficiency for the CdTe(CSS)/CdS solar cell was achieved by reaching high open-circuit voltages and fill factors, while the short-circuit current densities were moderate. These results indicate that further improvements to increase the short-circuit current densities can result in conversion efficiencies over 15 percent.

  4. High-Efficiency CdTe and CIGS Thin-Film Solar Cells: Highlights and Challenges; Preprint

    SciTech Connect (OSTI)

    Noufi, R.; Zweibel, K.

    2006-05-01

    Thin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se2 (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.

  5. Effect of Dual-Function Nano-Structured Silicon Oxide Thin Film on Multi-Junction Solar Cells

    SciTech Connect (OSTI)

    Yan, B.; Sivec, L.; Yue, G.; Jiang, C. S.; Yang, J.; Guha, S.

    2011-01-01

    We present our recent study of using nano-structured hydrogenated silicon oxide films (nc-SiO{sub x}:H) as a dual-function layer in multi-junction solar cells. The nc-SiO{sub x}:H films were deposited using very high frequency glow discharge of a SiH{sub 4} (or Si{sub 2}H{sub 6}), CO{sub 2}, PH{sub 3}, and H{sub 2} gas mixture. By optimizing deposition parameters, we obtained 'dual function' nc-SiO{sub x}:H material characterized by a conductivity suitable for use as an n layer and optical properties suitable for use as an inter-reflection layer. We tested the nc-SiO{sub x}:H by replacing the normal n-type material in the tunnel junction of a multi-junction structure. The advantage of the dual-function nc-SiO{sub x}:H layer is twofold; one is to simplify the cell structure, and the other is to reduce any optical loss associated with the inter-reflection layer. Quantum efficiency measurements show the gain in top cell current is equal to or greater than the loss in bottom cell current for a-Si:H/nc-Si:H structures. In addition, a thinner a-Si:H top cell with the nc-SiO{sub x}:H n layer improves the top-cell stability, thereby providing higher stabilized solar cell efficiency. We also used the dual-function layer between the middle and the bottom cells in a-Si:H/a-SiGe:H/nc-Si:H triple-junction structures. The gain in the middle cell current is {approx}1.0 mA/cm{sup 2}, leading to an initial active-area efficiency of 14.8%.

  6. Porous thin films

    DOE Patents [OSTI]

    Xu, Ting

    2015-11-17

    Compositions of porous thin films and methods of making are provided. The methods involve self-assembly of a cyclic peptide in the presence of a block copolymer.

  7. Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se{sub 2} thin-film solar cell absorbers

    SciTech Connect (OSTI)

    Lehmann, Jascha; Lehmann, Sebastian; Lauermann, Iver; Rissom, Thorsten; Kaufmann, Christian A.; Lux-Steiner, Martha Ch.; Br, Marcus; Sadewasser, Sascha

    2014-12-21

    Currently, Cu-containing chalcopyrite-based solar cells provide the highest conversion efficiencies among all thin-film photovoltaic (PV) technologies. They have reached efficiency values above 20%, the same performance level as multi-crystalline silicon-wafer technology that dominates the commercial PV market. Chalcopyrite thin-film heterostructures consist of a layer stack with a variety of interfaces between different materials. It is the chalcopyrite/buffer region (forming the p-n junction), which is of crucial importance and therefore frequently investigated using surface and interface science tools, such as photoelectron spectroscopy and scanning probe microscopy. To ensure comparability and validity of the results, a general preparation guide for realistic surfaces of polycrystalline chalcopyrite thin films is highly desirable. We present results on wet-chemical cleaning procedures of polycrystalline Cu(In{sub 1-x}Ga{sub x})Se{sub 2} thin films with an average x?=?[Ga]/([In]?+?[Ga])?=?0.29, which were exposed to ambient conditions for different times. The hence natively oxidized sample surfaces were etched in KCN- or NH{sub 3}-based aqueous solutions. By x-ray photoelectron spectroscopy, we find that the KCN treatment results in a chemical surface structure which is apart from a slight change in surface composition identical to a pristine as-received sample surface. Additionally, we discover a different oxidation behavior of In and Ga, in agreement with thermodynamic reference data, and we find indications for the segregation and removal of copper selenide surface phases from the polycrystalline material.

  8. Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

    SciTech Connect (OSTI)

    Theodorakos, I.; Zergioti, I.; Tsoukalas, D.; Raptis, Y. S.; Vamvakas, V.

    2014-01-28

    In this work, a picosecond diode pumped solid state laser and a nanosecond Nd:YAG laser have been used for the annealing and the partial nano-crystallization of an amorphous silicon layer. These experiments were conducted as an alternative/complementary to plasma-enhanced chemical vapor deposition method for fabrication of micromorph tandem solar cell. The laser experimental work was combined with simulations of the annealing process, in terms of temperature distribution evolution, in order to predetermine the optimum annealing conditions. The annealed material was studied, as a function of several annealing parameters (wavelength, pulse duration, fluence), as far as it concerns its structural properties, by X-ray diffraction, SEM, and micro-Raman techniques.

  9. Enhanced optoelectronic quality of perovskite thin films with hypophosphorous acid for planar heterojunction solar cells

    SciTech Connect (OSTI)

    Zhang, Wei; Pathak, Sandeep; Sakai, Nobuya; Stergiopoulos, Thomas; Nayak, Pabitra K.; Noel, Nakita K.; Haghighirad, Amir A.; Burlakov, Victor M.; deQuilettes, Dane W.; Sadhanala, Aditya; Li, Wenzhe; Wang, Liduo; Ginger, David S.; Friend, Richard H.; Snaith, Henry J.

    2015-11-30

    Solution-processed metal halide perovskite semiconductors, such as CH3NH3PbI3, have exhibited remarkable performance in solar cells, despite having non-negligible density of defect states. A likely candidate is halide vacancies within the perovskite crystals, or the presence of metallic lead, both generated due to the imbalanced I/Pb stoichiometry which could evolve during crystallization. Herein, we show that the addition of hypophosphorous acid (HPA) in the precursor solution can significantly improve the film quality, both electronically and topologically, and enhance the photoluminescence intensity, which leads to more efficient and reproducible photovoltaic devices. We demonstrate that the HPA can reduce the oxidized I2 back into I-, and our results indicate that this facilitates an improved stoichiometry in the perovskite crystal and a reduced density of metallic lead.

  10. Enhanced optoelectronic quality of perovskite thin films with hypophosphorous acid for planar heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Wei; Pathak, Sandeep; Sakai, Nobuya; Stergiopoulos, Thomas; Nayak, Pabitra K.; Noel, Nakita K.; Haghighirad, Amir A.; Burlakov, Victor M.; deQuilettes, Dane W.; Sadhanala, Aditya; et al

    2015-11-30

    Solution-processed metal halide perovskite semiconductors, such as CH3NH3PbI3, have exhibited remarkable performance in solar cells, despite having non-negligible density of defect states. A likely candidate is halide vacancies within the perovskite crystals, or the presence of metallic lead, both generated due to the imbalanced I/Pb stoichiometry which could evolve during crystallization. Herein, we show that the addition of hypophosphorous acid (HPA) in the precursor solution can significantly improve the film quality, both electronically and topologically, and enhance the photoluminescence intensity, which leads to more efficient and reproducible photovoltaic devices. We demonstrate that the HPA can reduce the oxidized I2 backmore » into I-, and our results indicate that this facilitates an improved stoichiometry in the perovskite crystal and a reduced density of metallic lead.« less

  11. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report

    SciTech Connect (OSTI)

    Trefny, J.U.; Mao, D.

    1998-01-01

    During the past year, Colorado School of Mines (CSM) researchers performed systematic studies of the growth and properties of electrodeposition CdS and back-contact formation using Cu-doped ZnTe, with an emphasis on low Cu concentrations. CSM also started to explore the stability of its ZnTe-Cu contacted CdTe solar cells. Researchers investigated the electrodeposition of CdS and its application in fabricating CdTe/CdS solar cells. The experimental conditions they explored in this study were pH from 2.0 to 3.0; temperatures of 80 and 90 C; CdCl{sub 2} concentration of 0.2 M; deposition potential from {minus}550 to {minus}600 mV vs. Ag/AgCl electrode; [Na{sub 2}S{sub 2}O{sub 4}] concentration between 0.005 and 0.05 M. The deposition rate increases with increase of the thiosulfate concentration and decrease of solution pH. Researchers also extended their previous research of ZnTe:Cu films by investigating films doped with low Cu concentrations (< 5 at. %). The low Cu concentration enabled them to increase the ZnTe:Cu post-annealing temperature without causing excessive Cu diffusion into CdTe or formation of secondary phases. The effects of Cu doping concentration and post-deposition annealing temperature on the structural, compositional, and electrical properties of ZnTe were studied systematically using X-ray diffraction, atomic force microscopy, electron microprobe, Hall effect, and conductivity measurements.

  12. Photochemical Deposition of Semiconductor Thin Films and Their Application for Solar Cells and Gas Sensors

    SciTech Connect (OSTI)

    Ichimura, M.; Gunasekaran, M.; Sueyoshi, T.

    2009-06-01

    The photochemical deposition (PCD) technique was applied for solar cells and gas sensors. CdS and Cd{sub 1-x}Zn{sub x}S were deposited by PCD. Thiosulfate ions S{sub 2}O{sub 3}{sup 2-} act as a reductant and a sulfur source. The SnS absorption layer was deposited by three-step pulse electrochemical deposition. For the CdS/SnS structure, the best cell showed an efficiency of about 0.2%, while for the Cd{sub 1-x}Zn{sub x}S/SnS structure, an efficiency of up to 0.7% was obtained. For the gas sensor application, SnO{sub 2} was deposited by PCD from a solution containing SnSO{sub 4} and HNO{sub 3}. To enhance the sensitivity to hydrogen, Pd was doped by the photochemical doping method. The current increased by a factor of 10{sup 4} upon exposure to 5000 ppm hydrogen within 1 min at room temperature. 10{sup 3} times conductivity increase was observed even for 50 ppm hydrogen.

  13. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  14. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  15. Theoretical Analysis of Effects of Deep Level, Back Contact, and Absorber Thickness on Capacitance-Voltage Profiling of CdTe Thin-Film Solar Cells

    SciTech Connect (OSTI)

    Li, J. V.; Halverson, A. F.; Sulima, O. V.; Bansal, S.; Burst, J. M.; Barnes, T. M.; Gessert, T. A.; Levi, D. H.

    2012-05-01

    The apparent carrier density profile measured by the capacitance-voltage technique in CdTe thin-film solar cells frequently displays a distinctive U-shape. We show that, even assuming a uniform carrier density, such a U-shape may arise from deep levels, a non-ohmic back-contact, and a thin absorber, which are commonly present in practical CdTe thin-film solar cells. A thin CdTe absorber contributes to the right branch of the U-shape due to a punch-through effect at reverse or zero biases, when the CdTe absorber is nearly fully depleted. A rectifying back-contact contributes to both branches of the U-shape due to voltage sharing with the front junction under a forward bias and early punch-through under a reverse bias. Deep levels contribute to the right branch, but also raise the bottom of the U-shape, leading to an overestimate of carrier density.

  16. Parity Solar Ltd | Open Energy Information

    Open Energy Info (EERE)

    Name: Parity Solar Ltd Place: Hong Kong, Hong Kong Product: A Hong Kong-headquartered a-Si thin-film module manufacturer with its production facility located in mainland China....

  17. Multifunctional thin film surface

    DOE Patents [OSTI]

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  18. Thin film tritium dosimetry

    DOE Patents [OSTI]

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  19. Research on high-efficiency, multiple-gap, multijunction, amorphous-silicon-based alloy thin-film solar cells

    SciTech Connect (OSTI)

    Guha, S. )

    1989-06-01

    This report presents results of research on advancing our understanding of amorphous-silicon-based alloys and their use in small-area multijunction solar cells. The principal objectives of the program are to develop a broad scientific base for the chemical, structural, optical, and electronic properties of amorphous-silicon-based alloys; to determine the optimum properties of these alloy materials as they relate to high-efficiency cells; to determine the optimum device configuration for multijunction cells; and to demonstrate proof-of-concept, multijunction, a-Si-alloy-based solar cells with 18% efficiency under standard AM1.5 global insolation conditions and with an area of at least 1 cm{sup 2}. A major focus of the work done during this reporting period was the optimization of a novel, multiple-graded structure that enhances cell efficiency through band-gap profiling. The principles of the operation of devices incorporating such a structure, computer simulations of those, and experimental results for both single- and multijunction cells prepared by using the novel structure are discussed in detail. 14 refs., 35 figs., 7 tabs.

  20. Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

    DOE Patents [OSTI]

    Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

    1999-01-01

    The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

  1. Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells

    DOE Patents [OSTI]

    Noufi, Rommel; Gabor, Andrew M.; Tuttle, John R.; Tennant, Andrew L.; Contreras, Miguel A.; Albin, David S.; Carapella, Jeffrey J.

    1995-01-01

    A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.

  2. Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells

    DOE Patents [OSTI]

    Noufi, R.; Gabor, A.M.; Tuttle, J.R.; Tennant, A.L.; Contreras, M.A.; Albin, D.S.; Carapella, J.J.

    1995-08-15

    A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.

  3. Modeling of capacitance transients of thin-film solar cells: A valuable tool to gain information on perturbing layers or interfaces

    SciTech Connect (OSTI)

    Lauwaert, Johan Van Puyvelde, Lisanne; Vrielinck, Henk; Lauwaert, Jeroen; Thybaut, Joris W.

    2014-02-03

    Thin-film electronic and photovoltaic devices often comprise, in addition to the anticipated p-n junctions, additional non-ideal ohmic contacts between layers. This may give rise to additional signals in capacitance spectroscopy techniques that are not directly related to defects in the structure. In this paper, we present a fitting algorithm for transient signals arising from such an additional junction. The fitting results are in excellent agreement with the diode characteristics extracted from static measurements on individual components. Finally, the algorithm is applied for determining the barriers associated with anomalous signals reported for selected CuIn{sub 1x}Ga{sub x}Se{sub 2} and CdTe solar cells.

  4. Effect of heat treatments and window layer processing on the characteristics of CuInGaSe{sub 2} thin film solar cells

    SciTech Connect (OSTI)

    Ramanathan, K.; Contreras, M.A.; Tuttle, J.R.

    1996-05-01

    Interaction between chemical bath deposited CdS and ZnO window layers are a focus of this paper. Low temperature anneals were used to follow the changes at the interface. Optical absorption spectra show that CdS and ZnO intermix upon annealing. When applied to ZnO/CdS/CuInGaSe{sub 2} thin film solar cells, changes in the short and long wavelength response were observed. The latter is attributed to an increase in the energy gap of the absorber by diffusion of S. The interdiffusion is shown to increase the short wavelength collection, and hence the current density of the devices. Photoluminescence data provides some indication of the quality of the interface.

  5. Direct Thin Film Path to Low Cost, Large Area III-V Photovoltaics...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Photovoltaic Solar Photovoltaic Advanced Materials Advanced Materials Find More Like This Return to Search Direct Thin Film Path to Low Cost, Large Area III-V Photovoltaics ...

  6. NMR characterization of thin films

    DOE Patents [OSTI]

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  7. NMR characterization of thin films

    DOE Patents [OSTI]

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  8. Epitaxial thin films

    DOE Patents [OSTI]

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  9. Thin film photovoltaic cell

    DOE Patents [OSTI]

    Meakin, John D.; Bragagnolo, Julio

    1982-01-01

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  10. Thin-film optical initiator

    DOE Patents [OSTI]

    Erickson, Kenneth L.

    2001-01-01

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  11. Thin film superconductor magnetic bearings

    DOE Patents [OSTI]

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  12. BeyondPV Co Ltd Bayang Solar PV | Open Energy Information

    Open Energy Info (EERE)

    Co Ltd (Bayang Solar PV) Place: Tainan, Taiwan Zip: 70955 Product: BeyondPV is an a-Si thin-film silicon PV maker based in southern Taiwan. References: BeyondPV Co Ltd (Bayang...

  13. Generation of low work function, stable compound thin films by laser ablation

    DOE Patents [OSTI]

    Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

    2001-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  14. NREL: Photovoltaics Research - Polycrystalline Thin-Film Materials...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    researchers, postdocs, and students. CdTe Research CdTe-based thin-film solar cell modules currently represent one of the fastest-growing segments of commercial module production. ...

  15. Thin film composite electrolyte

    DOE Patents [OSTI]

    Schucker, Robert C. (The Woodlands, TX)

    2007-08-14

    The invention is a thin film composite solid (and a means for making such) suitable for use as an electrolyte, having a first layer of a dense, non-porous conductive material; a second layer of a porous ionic conductive material; and a third layer of a dense non-porous conductive material, wherein the second layer has a Coefficient of thermal expansion within 5% of the coefficient of thermal expansion of the first and third layers.

  16. Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study

    SciTech Connect (OSTI)

    Sogabe, Tomah Shoji, Yasushi; Tamayo, Efrain; Okada, Yoshitaka; Mulder, Peter; Schermer, John

    2014-09-15

    We report the fabrication of a thin film InAs/GaAs quantum dot solar cell (QD cell) by applying epitaxial lift-off (ELO) approach to the GaAs substrate. We confirmed significant current collection enhancement (?0.91?mA/cm{sup 2}) in the ELO-InAs QD cell within the wavelength range of 700?nm900?nm when compared to the ELO-GaAs control cell. This is almost six times of the sub-GaAs bandgap current collection (?0.16?mA/cm{sup 2}) from the wavelength range of 900?nm and beyond, we also confirmed the ELO induced resonance cavity effect was able to increase the solar cell efficiency by increasing both the short circuit current and open voltage. The electric field intensity of the resonance cavity formed in the ELO film between the Au back reflector and the GaAs front contact layer was analyzed in detail by finite-differential time-domain (FDTD) simulation. We found that the calculated current collection enhancement within the wavelength range of 700?nm900?nm was strongly influenced by the size and shape of InAs QD. In addition, we performed concentrated light photovoltaic study and analyzed the effect of intermediate states on the open voltage under varied concentrated light intensity for the ELO-InAs QD cell.

  17. Enhanced Thin Film Organic Photovoltaic Devices - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Photovoltaic Solar Photovoltaic Find More Like This Return to Search Enhanced Thin Film Organic Photovoltaic Devices Brookhaven National Laboratory Contact BNL About This Technology An Embodiment of the Optical Field Confinement Device An Embodiment of the Optical Field Confinement Device Technology Marketing Summary A novel structure design for thin film organic photovoltaic (OPV) devices provides a system for increasing the optical absorption in the active layer. The waveguided structure

  18. Fabrication and characterization of Al{sub 2}O{sub 3} /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    SciTech Connect (OSTI)

    Zhang, Ruiying; Zhu, Jian; Zhang, Zhen; Wang, Yanyan; Qiu, Bocang; Liu, Xuehua; Zhang, Jinping; Zhang, Yi; Fang, Qi; Ren, Zhong; Bai, Yu

    2015-12-15

    We report on our fabrication and characterization of Al{sub 2}O{sub 3}/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al{sub 2}O{sub 3} layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al{sub 2}O{sub 3}thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al{sub 2}O{sub 3} film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al{sub 2}O{sub 3} film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10{sup −9} A/cm{sup 2} over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiO{sub x} layer formed between the interface of Si and the Al{sub 2}O{sub 3} film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al{sub 2}O{sub 3} coated CND structures is a truly viable approach to achieving higher device

  19. Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds

    DOE Patents [OSTI]

    Mickelsen, Reid A.; Chen, Wen S.

    1983-01-01

    Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.

  20. Intermixing at the absorber-buffer layer interface in thin-film...

    Office of Scientific and Technical Information (OSTI)

    ... DOPED MATERIALS; IMPURITIES; INTERFACES; LAYERS; PASSIVATION; PHOTOVOLTAIC EFFECT; RECOMBINATION; SOLAR CELLS; THIN FILMS; TRAPS; ZINC SULFIDES Word Cloud More Like This Full ...

  1. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Lauf, Robert J.; Hoffheins, Barbara S.; Fleming, Pamela H.

    1994-01-01

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

  2. Annealed CVD molybdenum thin film surface

    DOE Patents [OSTI]

    Carver, Gary E. (Tucson, AZ); Seraphin, Bernhard O. (Tucson, AZ)

    1984-01-01

    Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

  3. Structure of Molecular Thin Films for Organic Electronics | Stanford

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Synchrotron Radiation Lightsource Structure of Molecular Thin Films for Organic Electronics Friday, April 6, 2012 - 1:00pm SSRL Conference Room 137-322 Bert Nickel, Physics Faculty and CeNS, Ludwig-Maximilians-University, München Thin films made out of conjugated small molecules and polymers exhibit very interesting semiconducting properties. While some applications such as light emitting diodes (OLED) are already on the market, other application such as solar cells, integrated circuits,

  4. Thin film ion conducting coating

    DOE Patents [OSTI]

    Goldner, Ronald B.; Haas, Terry; Wong, Kwok-Keung; Seward, George

    1989-01-01

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  5. Innovative Thin Films LLC | Open Energy Information

    Open Energy Info (EERE)

    Thin Films LLC Place: Toledo, Ohio Zip: 43607 Product: Provider of altnernative energy thin film deposition technology. Coordinates: 46.440613, -122.847838 Show Map Loading...

  6. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

    1994-11-22

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

  7. Ferromagnetic thin films

    DOE Patents [OSTI]

    Krishnan, K.M.

    1994-12-20

    A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

  8. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual subcontract report, 20 March 1992--19 March 1993

    SciTech Connect (OSTI)

    Trefny, J.U.; Furtak, T.E.; Wada, N.; Williamson, D.L.; Kim, D.

    1993-08-01

    This report describes progress during the first year of a 3-year program at Colorado School of Mines, based upon earlier studies performed by Ametek Corporation, to develop specific layers of the Ametek n-i-p structure as well as additional studies of several transparent conducting oxides. Thin films of ZnO and ZnO:Al were deposited under various conditions. For the n-layer of the Ametek structure, a dip-coating method was developed for the deposition of CdS films. The authors also present data on the characterization of these films by X-ray diffraction, Raman spectroscopy, scanning tunneling microscopy, small-angle X-ray scattering, and other techniques. They made progress in the electrodeposition of the CdTe i-layer of the Ametek structure. They developed appropriate electrochemical baths and are beginning to understand the role of the many experimental parameters that must be controlled to obtain high-quality films of this material. They explored the possibility of using an electrochemical process for fabricating the ZnTe p-layer. Some preliminary success was achieved, and this step will be pursued in the next phase. Finally, they fabricated a number of ``dot`` solar cells with the structure glass/SnO{sub 2}/CdS/CdTe/Au. Several cells with efficiencies in the range of 5%-6% were obtained, and they are confident, given recent progress, that cells with efficiencies in excess of 10% will be achieved in the near future.

  9. Atmospheric Pressure Chemical Vapor Deposition of High Silica SiO2-TiO2 Antireflective Thin Films for Glass Based Solar Panels

    SciTech Connect (OSTI)

    Klobukowski, Erik R; Tenhaeff, Wyatt E; McCamy, James; Harris, Caroline; Narula, Chaitanya Kumar

    2013-01-01

    The atmospheric pressure chemical vapor deposition (APCVD) of SiO2-TiO2 thin films employing [[(tBuO)3Si]2O-Ti(OiPr)2], which can be prepared from commercially available materials, results in antireflective thin films on float glass under industrially relevant manufacturing conditions. It was found that while the deposition temperature had an effect on the SiO2:TiO2 ratio, the thickness was dependent on the time of deposition. This study shows that it is possible to use APCVD employing a single source precursor containing titanium and silicon to produce thin films on float glass with high SiO2:TiO2 ratios.

  10. Polycrystalline Thin Film Photovoltaics: Research, Development, and Technologies: Preprint

    SciTech Connect (OSTI)

    Ullal, H. S.; Zweibel, K.; von Roedern, B.

    2002-05-01

    II-VI binary thin-film solar cells based on cadmium telluride (CdTe) and I-III-VI ternary thin-film solar cells based on copper indium diselenide (CIS) and related materials have been the subject of intense research and development in the past few years. Substantial progress has been made thus far in the area of materials research, device fabrication, and technology development, and numerous applications based on CdTe and CIS have been deployed worldwide. World record efficiency of 16.5% has been achieved by NREL scientists for a thin-film CdTe solar cell using a modified device structure. Also, NREL scientists achieved world-record efficiency of 21.1% for a thin-film CIGS solar cell under a 14X concentration and AM1.5 global spectrum. When measured under a AM1.5 direct spectrum, the efficiency increases to 21.5%. Pathways for achieving 25% efficiency for tandem polycrystalline thin-film solar cells are elucidated. R&D issues relating to CdTe and CIS are reported in this paper, such as contact stability and accelerated life testing in CdTe, and effects of moisture ingress in thin-film CIS devices. Substantial technology development is currently under way, with various groups reporting power module efficiencies in the range of 7.0% to 12.1% and power output of 40.0 to 92.5 W. A number of lessons learned during the scale-up activities of the technology development for fabrication of thin-film power modules are discussed. The major global players actively involved in the technology development and commercialization efforts using both rigid and flexible power modules are highlighted.

  11. Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint

    SciTech Connect (OSTI)

    Gessert, T. A.; Metzger, W. K.; Asher, S. E.; Young, M. R.; Johnston, S.; Dhere, R. G.; Duda, A.

    2008-05-01

    We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact.

  12. Thin Film Electronic Devices with Conductive and Transparent Gas and

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Moisture Permeation Barriers - Energy Innovation Portal Solar Photovoltaic Solar Photovoltaic Electricity Transmission Electricity Transmission Advanced Materials Advanced Materials Find More Like This Return to Search Thin Film Electronic Devices with Conductive and Transparent Gas and Moisture Permeation Barriers National Renewable Energy Laboratory Contact NREL About This Technology Technology Marketing Summary Transparent conducting (TC) materials are extensively used in electronics and

  13. TGI Solar Power Group | Open Energy Information

    Open Energy Info (EERE)

    Solar Product: TGI Solar Power Group specialises in the manufacture and integration of thin film PV fabrication lines, PV thin film manufacturing equipment, as well as project...

  14. Low cost back contact heterojunction solar cells on thin c-Si wafers. Integrating laser and thin film processing for improved manufacturability

    SciTech Connect (OSTI)

    Hegedus, Steven S.

    2015-09-08

    An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerfless techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to

  15. Low cost back contact heterojunction solar cells on thin c-Si wafers. integrating laser and thin film processing for improved manufacturability

    SciTech Connect (OSTI)

    Hegedus, Steven S.

    2015-09-08

    An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerfless techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to

  16. Thin film photovoltaic cells

    DOE Patents [OSTI]

    Rothwarf, Allen

    1981-01-01

    A solar cell has as its transparent electrical contact a grid made from a non-noble metal by providing a layer of copper oxide between the transparent electrical contact and the absorber-generator.

  17. Semiconductor-nanocrystal/conjugated polymer thin films

    DOE Patents [OSTI]

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  18. Semiconductor-nanocrystal/conjugated polymer thin films

    DOE Patents [OSTI]

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  19. Thin film-coated polymer webs

    DOE Patents [OSTI]

    Wenz, Robert P.; Weber, Michael F.; Arudi, Ravindra L.

    1992-02-04

    The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

  20. All-Hot-Wire Chemical Vapor Deposition a-Si:H Solar Cells

    SciTech Connect (OSTI)

    Iwaniczko, E.; Wang, Q.; Xu, Y.; Nelson, B. P.; Mahan, A. H.; Crandall, R. S.; Branz, H. M.

    2000-01-01

    Efficient hydrogenated amorphous silicon (a-Si:H) nip solar cells have been fabricated with all doped and undoped a-Si:H layers deposited by hot-wire chemical vapor deposition (HWCVD). The total deposition time of all layers, except the top ITO-contact, is less than 4 minutes.

  1. Fabrication of polycrystalline thin films by pulsed laser processing

    DOE Patents [OSTI]

    Mitlitsky, Fred (Livermore, CA); Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Colella, Nicholas J. (Livermore, CA)

    1998-02-03

    A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

  2. Fabrication of polycrystalline thin films by pulsed laser processing

    DOE Patents [OSTI]

    Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

    1998-02-03

    A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

  3. Thin film polymeric gel electrolytes

    DOE Patents [OSTI]

    Derzon, Dora K.; Arnold, Jr., Charles; Delnick, Frank M.

    1996-01-01

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  4. Thin film polymeric gel electrolytes

    DOE Patents [OSTI]

    Derzon, D.K.; Arnold, C. Jr.; Delnick, F.M.

    1996-12-31

    Novel hybrid thin film electrolytes, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1} cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  5. NREL: Energy Analysis - Crystalline Silicon and Thin Film Photovoltaic

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Results - Life Cycle Assessment Harmonization Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Assessment Harmonization Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics (Fact Sheet) Cover of the Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics factsheet Download the Fact Sheet Over the last 30 years, hundreds of life cycle assessments (LCAs) have been conducted and published for a variety of residential and utility-scale solar photovoltaic (PV)

  6. Solar Cells from Earth-Abundant Semiconductors with Plasmon-Enhanced Light Absorption

    SciTech Connect (OSTI)

    Atwater, Harry

    2012-04-30

    Progress is reported in these areas: Plasmonic Light Trapping in Thin Film a-Si Solar Cells; Plasmonic Light Trapping in Thin InGaN Quantum Well Solar Cells; and Earth Abundant Cu{sub 2}O and Zn{sub 3}P{sub 2} Solar Cells.

  7. Influence of different sulfur to selenium ratios on the structural and electronic properties of Cu(In,Ga)(S,Se){sub 2} thin films and solar cells formed by the stacked elemental layer process

    SciTech Connect (OSTI)

    Mueller, B. J.; Zimmermann, C.; Haug, V. Koehler, T.; Zweigart, S.; Hergert, F.; Herr, U.

    2014-11-07

    In this study, we investigate the effect of different elemental selenium to elemental sulfur ratios on the chalcopyrite phase formation in Cu(In,Ga)(S,Se){sub 2} thin films. The films are formed by the stacked elemental layer process. The structural and electronic properties of the thin films and solar cells are analyzed by means of scanning electron microscopy, glow discharge optical emission spectrometry, X-ray diffraction, X-ray fluorescence, Raman spectroscopy, spectral photoluminescence as well as current-voltage, and quantum efficiency measurements. The influence of different S/(S+Se) ratios on the anion incorporation and on the Ga/In distribution is investigated. We find a homogenous sulfur concentration profile inside the film from the top surface to the bottom. External quantum efficiency measurements show that the band edge of the solar cell device is shifted to shorter wavelength, which enhances the open-circuit voltages. The relative increase of the open-circuit voltage with S/(S+Se) ratio is lower than expected from the band gap energy trend, which is attributed to the presence of S-induced defects. We also observe a linear decrease of the short-circuit current density with increasing S/(S+Se) ratio which can be explained by a reduced absorption. Above a critical S/(S+Se) ratio of around 0.61, the fill factor drops drastically, which is accompanied by a strong series resistance increase which may be attributed to changes in the back contact or p-n junction properties.

  8. Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface

    SciTech Connect (OSTI)

    Bar, M.; Wimmer, M.; Wilks, R. G.; Roczen, M.; Gerlach, D.; Ruske, F.; Lips, K.; Rech, B.; Weinhardt, L.; Blum, M.; Pookpanratana, S.; Krause, S.; Zhang, Y.; Heske, C.; Yang, W.; Denlinger, J. D.

    2010-04-30

    The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.

  9. A-Si:H solar cells deposited by the hot wire method

    SciTech Connect (OSTI)

    Iwaniczko, E.; Nelson, B.P.; Molenbroek, E.C.; Schropp, R.; Crandall, R.S.; Mahan, A.H. )

    1994-06-30

    We demonstrate the deposition of a hybrid a-Si:H solar cell in a new research reactor, where we deposit the doped layers by glow discharge and the intrinsic layer by hot wire. After only 10 depositions, we obtained solar cell conversion efficiencies of 7%. We are currently pursuing research avenues which we expect will lead to higher efficiencies.

  10. NREL Achieves Solar-Electric Record

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cadmium telluride represents one of the most promising technologies for so-called thin-film solar cells. In the thin-film manufacturing process, layers of differing ...

  11. Thin films of mixed metal compounds

    DOE Patents [OSTI]

    Mickelsen, R.A.; Chen, W.S.

    1985-06-11

    Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

  12. Method of producing amorphous thin films

    DOE Patents [OSTI]

    Brusasco, Raymond M.

    1992-01-01

    Disclosed is a method of producing thin films by sintering which comprises: a. coating a substrate with a thin film of an inorganic glass forming parulate material possessing the capability of being sintered, and b. irridiating said thin film of said particulate material with a laser beam of sufficient power to cause sintering of said material below the temperature of liquidus thereof. Also disclosed is the article produced by the method claimed.

  13. Thin film buried anode battery

    DOE Patents [OSTI]

    Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

    2009-12-15

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  14. Performance of Hydrogenated a-Si:H Solar Cells with Downshifting Coating: Preprint

    SciTech Connect (OSTI)

    Nemeth, B.; Xu, Y.; Wang, H.; Sun, T.; Lee, B. G.; Duda, A.; Wang, Q.

    2011-05-01

    We apply a thin luminescent downshifting (LDS) coating to a hydrogenated amorphous Si (a-Si:H) solar cell and study the mechanism of possible current enhancement. The conversion material used in this study converts wavelengths below 400 nm to a narrow line around 615 nm. This material is coated on the front of the glass of the a-Si:H solar cell with a glass/TCO/p/i/n/Ag superstrate configuration. The initial efficiency of the solar cell without the LDS coating is above 9.0 % with open circuit voltage of 0.84 V. Typically, the spectral response below 400 nm of an a-Si:H solar cell is weaker than that at 615 nm. By converting ultraviolet (UV) light to red light, the solar cell will receive more red photons; therefore, solar cell performance is expected to improve. We observe evidence of downshifting in reflectance spectra. The cell Jsc decreases by 0.13 mA/cm2, and loss mechanisms are identified.

  15. Zinc oxide thin film acoustic sensor

    SciTech Connect (OSTI)

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah; Mansour, Hazim Louis

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  16. Partial Shading in Monolithic Thin Film PV Modules: Analysis...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Partial Shading in Monolithic Thin Film PV Modules: Analysis and Design Partial Shading in Monolithic Thin Film PV Modules: Analysis and Design Presented at the PV Module ...

  17. High Temperature Thin Film Polymer Dielectric Based Capacitors...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Thin Film Polymer Dielectric Based Capacitors for HEV Power Electronic Systems High Temperature Thin Film Polymer Dielectric Based Capacitors for HEV Power Electronic Systems 2009 ...

  18. Partial Shade Stress Test for Thin-Film Photovoltaic Modules...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Partial Shade Stress Test for Thin-Film Photovoltaic Modules Preprint Timothy J. ... Partial shade stress test for thin-film photovoltaic modules Timothy J Silverman , ...

  19. Solvothermal Thin Film Deposition of Electron Blocking Layers...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solvothermal Thin Film Deposition of Electron Blocking Layers Home > Research > ANSER Research Highlights > Solvothermal Thin Film Deposition of Electron Blocking Layers...

  20. Multilayer Thin-Film Thermoelectric Materials for Vehicle Applications...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Multilayer Thin-Film Thermoelectric Materials for Vehicle Applications Multilayer Thin-Film Thermoelectric Materials for Vehicle Applications 2004 Diesel Engine Emissions Reduction ...

  1. Thinner Film Silicon Solar Cells - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    thin film silicon solar cells with a potential increase in photon energy conversion of up to 20%, a significant improvement over conventional thin film photovoltaic technologies. ...

  2. The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact

    SciTech Connect (OSTI)

    Gerlach, D.; Wilks, R. G.; Wimmer, M.; Felix, R.; Gorgoi, M.; Lips, K.; Rech, B.; Wippler, D.; Mueck, A.; Meier, M.; Huepkes, J.; Lozac'h, M.; Ueda, S.; Sumiya, M.; Yoshikawa, H.; Kobayashi, K.; Baer, M.

    2013-07-08

    The electronic structure of the interface between the boron-doped oxygenated amorphous silicon 'window layer' (a-SiO{sub x}:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon ({mu}c-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (-2.87 {+-} 0.27) eV and (-3.37 {+-} 0.27) eV, respectively. A lower tunnel junction barrier height at the {mu}c-Si:H(B)/ZnO:Al interface compared to that at the a-SiO{sub x}:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a {mu}c-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.

  3. Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique

    SciTech Connect (OSTI)

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong

    2011-03-30

    Zinc oxide (ZnO) is a very promising material for emerging large area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 100 nm to 1020 nm were deposited on silicon (Si) substrate. The deposition pressure was varied from 12 mTorr to 25 mTorr. The influences of the film thickness and the deposition pressure on structural properties of the ZnO films were investigated using Mahr surface profilometer and atomic force microscopy (AFM). The experimental results reveal that the film thickness and the deposition pressure play significant role in the structural formation of the deposited ZnO thin films. ZnO films deposited on Si substrates are promising for variety of thin-film sensor applications.

  4. Project Profile: Development and Productization of High-Efficiency, Low-Cost Building-Integrated PV Shingles Using Monocrystalline Silicon Thin-Film Solar Cells

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Solexel-OC team is developing a BIPV roofing shingle product that includes low-profile solar modules and a unique attachment system that will be fastened directly to the roof and incorporates...

  5. Structural characterization of thin film photonic crystals

    SciTech Connect (OSTI)

    Subramania, G.; Biswas, R.; Constant, K.; Sigalas, M. M.; Ho, K. M.

    2001-06-15

    We quantitatively analyze the structure of thin film inverse-opal photonic crystals composed of ordered arrays of air pores in a background of titania. Ordering of the sphere template and introduction of the titania background were performed simultaneously in the thin film photonic crystals. Nondestructive optical measurements of backfilling with high refractive index liquids, angle-resolved reflectivity, and optical spectroscopy were combined with band-structure calculations. The analysis reveals a thin film photonic crystal structure with a very high filling fraction (92{endash}94%) of air and a substantial compression along the c axis ({similar_to}22{endash}25%).

  6. Stable a-Si:H-Based Multijunction Solar Cells with Guidance from Real-Time Optics: Final Report, 17 July 1998--16 November 2001

    SciTech Connect (OSTI)

    Wronski, C. R.; Collins, R. W.; Pearce, J. M.; Koval, R. J.; Ferlauto, A. S.; Ferreira, G. M.; Chen C.

    2002-08-01

    This report describes the new insights obtained into the growth of hydrogenated silicon (Si:H) films via real-time spectroscopic ellipsometry (RTSE) measurements. Evolutionary phase diagrams were expanded to include the effects of different deposition conditions, including rf power, pressure, and temperature. Detailed studies of degradation kinetics in thin films and corresponding solar cells have been carried out. Both p-i-n and n-i-p solar cells that incorporate Si:H i-layers deposited with and without H2-dilution have been studied. For the first time, direct and reliable correlations have been obtained between the light-induced changes in thin-film materials and the degradation of the corresponding solar cells.

  7. Permanent laser conditioning of thin film optical materials

    DOE Patents [OSTI]

    Wolfe, C. Robert; Kozlowski, Mark R.; Campbell, John H.; Staggs, Michael; Rainer, Frank

    1995-01-01

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

  8. Permanent laser conditioning of thin film optical materials

    DOE Patents [OSTI]

    Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

    1995-12-05

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

  9. Thin film production method and apparatus

    DOE Patents [OSTI]

    Loutfy, Raouf O.; Moravsky, Alexander P.; Hassen, Charles N.

    2010-08-10

    A method for forming a thin film material which comprises depositing solid particles from a flowing suspension or aerosol onto a filter and next adhering the solid particles to a second substrate using an adhesive.

  10. Ultra-high current density thin-film Si diode

    DOE Patents [OSTI]

    Wang; Qi

    2008-04-22

    A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

  11. Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

    DOE Patents [OSTI]

    Brinker, Charles Jeffrey; Prakash, Sai Sivasankaran

    1999-01-01

    A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

  12. The impact of oxygen incorporation during intrinsic ZnO sputtering on the performance of Cu(In,Ga)Se{sub 2} thin film solar cells

    SciTech Connect (OSTI)

    Lee, Kkotnim; Ok, Eun-A; Park, Jong-Keuk; Kim, Won Mok; Baik, Young-Joon; Jeong, Jeung-hyun; Kim, Donghwan

    2014-08-25

    We investigated the impact of incorporating 2% oxygen during intrinsic ZnO sputtering on the efficiency of Cu(In,Ga)Se{sub 2} solar cells. The added oxygen not only reduced the optical absorption loss of the Al-doped ZnO overlaying layer but also improved the electronic properties of the underlying CdS/Cu(In,Ga)Se{sub 2} by increasing carrier density, lowering defect level, and increasing diffusion length, eventually enhancing J{sub SC}, V{sub OC}, and fill factor. It was found that the Na doping concentration was significantly increased around the CdS/Cu(In,Ga)Se{sub 2} junction due to the plasma-activated oxygen. The improved electronic properties are better explained by the increased Na concentration than simply the oxygen-related defect passivation.

  13. Influence of sputtering power on the optical properties of ITO thin films

    SciTech Connect (OSTI)

    K, Aijo John; M, Deepak T, Manju; Kumar, Vineetha V.

    2014-10-15

    Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

  14. The effects of hydrogen dilution on Voc in a-Si:H pin solar cells

    SciTech Connect (OSTI)

    Wang, Q.; Crandall, R.S.; Han, D.

    1997-07-01

    The authors study the effects of hydrogen dilution on the open circuit voltage of a-Si:H pin solar cells fabricated by rf glow discharge growth. They keep the p and n layers the same and only vary the i-layer properties. A normal a-Si:H i-layer, an H-diluted i-layer, and a thin H-diluted layer inserted between p and normal i layer are selected for this study. They measure the JV characteristics and the internal electric field distribution using a transient-null-current technique both in annealed and light soaked states. They find that hydrogen dilution does stabilize the Voc either in a bulk H-diluted i layer or in a thin layer between p and normal i layer after 100 hours Am1 sun light soaking. From dark IV measurement, both H-diluted cells show little change in current at voltage near Voc before and after light soaking; while the normal a-Si:H cell does show a noticeable change. Also the internal field measurements find a stronger electric field starting from p and i interface for both H-diluted cells compared to the normal a-Si:H cell. Furthermore, there are no measurable changes in the field profiles after 100 hour AM1 light-soaking for both H-diluted and normal a-Si cells. All these suggest that hydrogen dilution increases the field strength near p and i interface, which is the key that leads to a more stable Voc of H-diluted cells.

  15. Ferromagnetic properties of fcc Gd thin films

    SciTech Connect (OSTI)

    Bertelli, T. P. Passamani, E. C.; Larica, C.; Nascimento, V. P.; Takeuchi, A. Y.

    2015-05-28

    Magnetic properties of sputtered Gd thin films grown on Si (100) substrates kept at two different temperatures were investigated using X-ray diffraction, ac magnetic susceptibility, and dc magnetization measurements. The obtained Gd thin films have a mixture of hcp and fcc structures, but with their fractions depending on the substrate temperature T{sub S} and film thickness x. Gd fcc samples were obtained when T{sub S} = 763 K and x = 10 nm, while the hcp structure was stabilized for lower T{sub S} (300 K) and thicker film (20 nm). The fcc structure is formed on the Ta buffer layer, while the hcp phase grows on the fcc Gd layer as a consequence of the lattice relaxation process. Spin reorientation phenomenon, commonly found in bulk Gd species, was also observed in the hcp Gd thin film. This phenomenon is assumed to cause the magnetization anomalous increase observed below 50 K in stressed Gd films. Magnetic properties of fcc Gd thin films are: Curie temperature above 300 K, saturation magnetization value of about 175 emu/cm{sup 3}, and coercive field of about 100 Oe at 300 K; features that allow us to classify Gd thin films, with fcc structure, as a soft ferromagnetic material.

  16. Method for producing textured substrates for thin-film photovoltaic cells

    DOE Patents [OSTI]

    Lauf, Robert J.

    1994-01-01

    The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells.

  17. Method for producing textured substrates for thin-film photovoltaic cells

    DOE Patents [OSTI]

    Lauf, R.J.

    1994-04-26

    The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells. 4 figures.

  18. Method for producing textured substrates for thin-film photovoltaic cells

    DOE Patents [OSTI]

    Lauf, R.J.

    1996-04-02

    The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells. 4 figs.

  19. Method for producing textured substrates for thin-film photovoltaic cells

    DOE Patents [OSTI]

    Lauf, Robert J.

    1996-01-01

    The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells.

  20. Thin film dielectric composite materials

    DOE Patents [OSTI]

    Jia, Quanxi; Gibbons, Brady J.; Findikoglu, Alp T.; Park, Bae Ho

    2002-01-01

    A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

  1. Tungsten-doped thin film materials

    DOE Patents [OSTI]

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  2. Method for synthesizing thin film electrodes

    DOE Patents [OSTI]

    Boyle, Timothy J.

    2007-03-13

    A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

  3. Mesoscale morphologies in polymer thin films.

    SciTech Connect (OSTI)

    Ramanathan, M.; Darling, S. B. (Center for Nanoscale Materials)

    2011-06-01

    In the midst of an exciting era of polymer nanoscience, where the development of materials and understanding of properties at the nanoscale remain a major R&D endeavor, there are several exciting phenomena that have been reported at the mesoscale (approximately an order of magnitude larger than the nanoscale). In this review article, we focus on mesoscale morphologies in polymer thin films from the viewpoint of origination of structure formation, structure development and the interaction forces that govern these morphologies. Mesoscale morphologies, including dendrites, holes, spherulites, fractals and honeycomb structures have been observed in thin films of homopolymer, copolymer, blends and composites. Following a largely phenomenological level of description, we review the kinetic and thermodynamic aspects of mesostructure formation outlining some of the key mechanisms at play. We also discuss various strategies to direct, limit, or inhibit the appearance of mesostructures in polymer thin films as well as an outlook toward potential areas of growth in this field of research.

  4. Vibration welding system with thin film sensor

    DOE Patents [OSTI]

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  5. Thin Film Transistors On Plastic Substrates

    DOE Patents [OSTI]

    Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

    2004-01-20

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

  6. Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)

    SciTech Connect (OSTI)

    del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2006-10-03

    Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

  7. Probe of field collapse in a-Si:H solar cells

    SciTech Connect (OSTI)

    Wang, Q.; Crandall, R.S.

    1996-12-31

    The authors study the effect of illumination intensity on solar cell performance in a-Si:H solar cells. They find that the fill factor strongly depends on light intensity. As they increase the illumination intensity from low levels to one sun they observe a decrease in fill factor of approximately 15% in as grown cells. The authors attribute this effect to electric field collapse inside the cell. They propose that photogenerated space charge (free and trapped charge) increases with light intensity and causes field collapse. They describe the origin of space charge and the associated capacitance-photocapacitance. They measure the photocapacitance as a barometer to probe the collapsed field. The authors obtain a good agreement between photocapacitance experiments and theory. They also explore the light intensity dependence of photocapacitance and explain the decrease of FF with the increasing light intensity.

  8. Thin-film Rechargeable Lithium Batteries

    DOE R&D Accomplishments [OSTI]

    Dudney, N. J.; Bates, J. B.; Lubben, D.

    1995-06-01

    Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

  9. MultiLayer solid electrolyte for lithium thin film batteries...

    Office of Scientific and Technical Information (OSTI)

    Patent: MultiLayer solid electrolyte for lithium thin film batteries Citation Details In-Document Search Title: MultiLayer solid electrolyte for lithium thin film batteries A ...

  10. Photovoltaic Polycrystalline Thin-Film Cell Basics | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Thin films are unlike single-crystal silicon cells, which must be individually interconnected into a module. Thin-film devices can be made as a single unit-that is, ...

  11. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Guided Self-Assembly of Gold Thin Films Print Wednesday, 21 November 2012 12:18 Nanoparticles-man-made atoms with unique optical, ...

  12. Solvothermal Thin Film Deposition of Electron Blocking Layers | ANSER

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Center | Argonne-Northwestern National Laboratory Solvothermal Thin Film Deposition of Electron Blocking Layers Home > Research > ANSER Research Highlights > Solvothermal Thin Film Deposition of Electron Blocking Layers

  13. SAW determination of surface area of thin films

    DOE Patents [OSTI]

    Frye, Gregory C.; Martin, Stephen J.; Ricco, Antonio J.

    1990-01-01

    N.sub.2 adsorption isotherms are measured from thin films on SAW devices. The isotherms may be used to determine the surface area and pore size distribution of thin films.

  14. Copper Antimony Chalcogenide Thin Film PV Device Development

    SciTech Connect (OSTI)

    Welch, Adam W.; Baranowski, Lauryn L.; de Souza Lucas, Francisco Willian; Toberer, Eric S.; Wolden, Colin A.; Zakutayev, Andriy

    2015-06-14

    Emerging ternary chalcogenide thin film solar cell technologies, such as CuSbS2 and CuSbSe2, have recently attracted attention as simpler alternatives to quaternary Cu2ZnSnS4 (CZTS). Despite suitable photovoltaic properties, the initial energy conversion efficiency of CuSbS2 is rather low (0.3%). Here, we report on our progress towards improving the efficiency of CuSbS2 solar cells using a high throughput approach. The combinatorial methodology quickly results in baseline solar cell prototypes with 0.6% efficiency, and then modification of the back contact architecture leads to 1% PV devices. We then translate the optimal CuSbS2 synthesis parameters to CuSbSe2 devices, which show 3% efficiencies.

  15. Thermal stability of photovoltaic a-Si:H determined by neutron reflectometry

    SciTech Connect (OSTI)

    Qviller, A. J. Haug, H.; You, C. C.; Hasle, I. M.; Marstein, E. S.; Frommen, C.; Hauback, B. C.; Dennison, A. J. C.; Vorobiev, A.; streng, E.; Fjellvg, H.; Hjrvarsson, B.

    2014-12-08

    Neutron and X-ray reflectometry were used to determine the layer structure and hydrogen content of thin films of amorphous silicon (a-Si:H) deposited onto crystalline silicon (Si) wafers for surface passivation in solar cells. The combination of these two reflectometry techniques is well suited for non-destructive probing of the structure of a-Si:H due to being able to probe buried interfaces and having sub-nanometer resolution. Neutron reflectometry is also unique in its ability to allow determination of density gradients of light elements such as hydrogen (H). The neutron scattering contrast between Si and H is strong, making it possible to determine the H concentration in the deposited a-Si:H. In order to correlate the surface passivation properties supplied by the a-Si:H thin films, as quantified by obtainable effective minority carrier lifetime, photoconductance measurements were also performed. It is shown that the minority carrier lifetime falls sharply when H has been desorbed from a-Si:H by annealing.

  16. Flexoelectricity in barium strontium titanate thin film

    SciTech Connect (OSTI)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning; Shu, Longlong; Maria, Jon-Paul

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  17. Rechargeable Thin-film Lithium Batteries

    DOE R&D Accomplishments [OSTI]

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6 {mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li TiS{sub 2}, Li V{sub 2}O{sub 5}, and Li Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin film lithium batteries.

  18. UV absorption control of thin film growth

    DOE Patents [OSTI]

    Biefeld, Robert M.; Hebner, Gregory A.; Killeen, Kevin P.; Zuhoski, Steven P.

    1991-01-01

    A system for monitoring and controlling the rate of growth of thin films in an atmosphere of reactant gases measures the UV absorbance of the atmosphere and calculates the partial pressure of the gases. The flow of reactant gases is controlled in response to the partial pressure.

  19. Negative resistance in an organic thin film

    SciTech Connect (OSTI)

    Ehara, S. ); Takagi, T. ); Yoshida, T.; Inaba, H.; Naito, H.; Okuda, M. )

    1992-08-20

    This paper reports that the negative resistance of the tunneling currents was observed in a semiconducting organic thin film on a graphite substrate by an STM (Scanning Tunneling Microscopy). This negative resistance may be understood by the theory of a molecular resonance tunneling effect.

  20. Thin film hydrous metal oxide catalysts

    DOE Patents [OSTI]

    Dosch, Robert G. (Albuquerque, NM); Stephens, Howard P. (Albuquerque, NM)

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  1. Epitaxial Cu{sub 2}ZnSnS{sub 4} thin film on Si (111) 4° substrate

    SciTech Connect (OSTI)

    Song, Ning; Liu, Fangyang; Huang, Yidan; Hao, Xiaojing E-mail: xj.hao@unsw.edu.au; Green, Martin A.; Young, Matthew; Erslev, Pete; Harvey, Steven P.; Teeter, Glenn E-mail: xj.hao@unsw.edu.au; Wilson, Samual

    2015-06-22

    To explore the possibility of Cu{sub 2}ZnSnS{sub 4} (CZTS)/Si based tandem solar cells, the heteroepitaxy of tetragonal Cu{sub 2}ZnSnS{sub 4} thin films on single crystalline cubic Si (111) wafers with 4° miscut is obtained by molecular beam epitaxy. The X-ray θ-2θ scan and selected area diffraction patterns of the CZTS thin films and Si substrates, and the high resolution transmission electron microscopy image of the CZTS/Si interface region demonstrate that the CZTS thin films are epitaxially grown on the Si substrates. A CZTS/Si P-N junction is formed and shows photovoltaic responses, indicating the promising application of epitaxial CZTS thin films on Si.

  2. Thin film bismuth iron oxides useful for piezoelectric devices

    DOE Patents [OSTI]

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  3. Development of high, stable-efficiency triple-junction a-Si alloy solar cells. Final technical report

    SciTech Connect (OSTI)

    Deng, X.; Jones, S.J.; Liu, T.; Izu, M.

    1998-04-01

    This report summarizes Energy Conversion Devices, Inc.`s (ECD) research under this program. ECD researchers explored the deposition of a-Si at high rates using very-high-frequency plasma MHz, and compared these VHF i-layers with radio-frequency (RF) plasma-deposited i-layers. ECD conducted comprehensive research to develop a {mu}c-Si p{sup +} layer using VHF deposition process with the objectives of establishing a wider process window for the deposition of high-quality p{sup +} materials and further enhancing their performance of a-Si solar cells by improving its p-layers. ECD optimized the deposition of the intrinsic a-Si layer and the boron-doped {mu}c-Si p{sup +} layer to improve the V{sub oc}. Researchers deposited wide-bandgap a-Si films using high hydrogen dilution; investigated the deposition of the ZnO layer (for use in back-reflector) using a sputter deposition process involving metal Zn targets; and obtained a baseline fabrication for single-junction a-Si n-i-p devices with 10.6% initial efficiency and a baseline fabrication for triple-junction a-Si devices with 11.2% initial efficiency. ECD researchers also optimized the deposition parameters for a-SiGe with high Ge content; designed a novel structure for the p-n tunnel junction (recombination layer) in a multiple-junction solar cell; and demonstrated, in n-i-p solar cells, the improved stability of a-Si:H:F materials when deposited using a new fluorine precursor. Researchers investigated the use of c-Si(n{sup +})/a-Si alloy/Pd Schottky barrier device as a tool for the effective evaluation of photovoltaic performance on a-Si alloy materials. Through alterations in the deposition conditions and system hardware, researchers improved their understanding for the deposition of uniform and high-quality a-Si and a-SiGe films over large areas. ECD researchers also performed extensive research to optimize the deposition process of the newly constructed 5-MW back-reflector deposition machine.

  4. Thin film photovoltaic panel and method

    DOE Patents [OSTI]

    Ackerman, Bruce; Albright, Scot P.; Jordan, John F.

    1991-06-11

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  5. Preparation of thin film high temperature superconductors

    SciTech Connect (OSTI)

    VenKatesan, X.X.T.; Li, Q.; Findikoglu, A.; Hemmick, D. . Dept. of Physics); Wu, X.D. ); Inam, A.; Chang, C.C.; Ramesh, R.; Hwang, D.M.; Ravi, T.S.; Etemad, S.; Martinez, J.A.; Wilkens, B. )

    1991-03-01

    This paper addresses fundamental issues in preparing high quality high T{sub c} YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} thin films. The techniques of inverted cylindrical magnetron sputtering and pulsed laser deposition are chosen as successful examples to illustrate how the key problems can be solved. The fabrication of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}/PrBa{sub 2}Cu{sub 3}O{sub 7{minus}x} superlattices where superconductivity in a single unit cell layer of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} was observed demonstrates the state of the art of thin film deposition of high T{sub c} materials. Systematic variations of the deposition parameters result in changes of superconducting and structural properties of the films that correlate with their microwave and infrared characteristics.

  6. Substrate heater for thin film deposition

    DOE Patents [OSTI]

    Foltyn, Steve R. (111 Beryl St., Los Alamos, NM 87544)

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  7. Electrostatic thin film chemical and biological sensor

    DOE Patents [OSTI]

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  8. Multiferroic oxide thin films and heterostructures

    SciTech Connect (OSTI)

    Lu, Chengliang E-mail: Tao.Wu@kaust.edu.sa; Hu, Weijin; Wu, Tom E-mail: Tao.Wu@kaust.edu.sa; Tian, Yufeng

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  9. Superconducting thin films on potassium tantalate substrates

    DOE Patents [OSTI]

    Feenstra, Roeland; Boatner, Lynn A.

    1992-01-01

    A superconductive system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

  10. Packaging material for thin film lithium batteries

    DOE Patents [OSTI]

    Bates, John B.; Dudney, Nancy J.; Weatherspoon, Kim A.

    1996-01-01

    A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

  11. Thin film photovoltaic panel and method

    SciTech Connect (OSTI)

    Ackerman, B.; Albright, S.P.; Jordan, J.F.

    1991-06-11

    This patent describes an improved stability photovoltaic panel. It comprises photovoltaic cells each having polycrystalline thin film layers, each of the thin film layers respectively deposited on a common vitreous substrate for allowing light to pass therethrough to reach a photovoltaic heterojunction formed by at least two of the thin film layers, at least one of the film layers forming the photovoltaic heterojunction for each of the photovoltaic cells, each of the photovoltaic cells lying within a plane substantially parallel to an interior planar surface of the vitreous substrate, each of the photovoltaic cells being connected electrically in series to pass electrical current from the photovoltaic panel, a pliable sheet material backcap opposite the vitreous substrate with respect to the photovoltaic cells and spaced from the photovoltaic cells so as to form a substantially planar spacing between the photovoltaic cells and an interior surface of the sheet material backcap, a perimeter portion of the sheet material backcap having a bend for positioning an edge strip of the sheet material backcap spaced from the interior surface of the backcap to form the planar spacing, the edge strip forming a planar surface parallel with a sealingly engaging the vitreous substrate for forming a fluid-tight seal with the vitreous substrate about the perimeter of the photovoltaic cells for protecting the photovoltaic cells from elements exterior of the photovoltaic panel, and a selected desiccant filling substantially the planar spacing for preventing water vapor within the planar spacing from adversely affecting the photovoltaic cells.

  12. Ascent Solar Technologies Inc | Open Energy Information

    Open Energy Info (EERE)

    Sector: Solar Product: Ascent Solar develops and plans to manufacture CIGS thin-film solar cells and modules for the satellite and high-altitude airship (HAA)...

  13. Spectroscopic ellipsometry characterization of thin-film silicon nitride

    SciTech Connect (OSTI)

    Jellison, G.E. Jr.; Modine, F.A.; Doshi, P.; Rohatgi, A.

    1997-05-01

    We have measured and analyzed the optical characteristics of a series of silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition on silicon substrates for photovoltaic applications. Spectroscopic ellipsometry measurements were made by using a two-channel spectroscopic polarization modulator ellipsometer that measures N, S, and C data simultaneously. The data were fit to a model consisting of air / roughness / SiN / crystalline silicon. The roughness was modeled using the Bruggeman effective medium approximation, assuming 50% SiN, 50% voids. The optical functions of the SiN film were parameterized using a model by Jellison and Modine. All the {Chi}{sup 2} are near 1, demonstrating that this model works extremely well for all SiN films. The measured dielectric functions were used to make optimized SiN antireflection coatings for crystalline silicon solar cells.

  14. Development of an IR-transparent, inverted-grown, thin-film, Al[sub 0. 34]Ga[sub 0. 66]As/GaAs cascade solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R.; Timmons, M.L.; Sharps, P.R.; Colpitts, T.S.; Hills, J.S.; Hancock, J.; Hutchby, J.A. )

    1992-12-01

    Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a fully-processed, inverted-grown, thin film GaAs cell with a 1-sun AM1.5 efficiency of 20.3%. Also, an inverted-grown, thin-film, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiencies of 19.9% and 21% at 1-sun and 7-suns, respectively, has been obtained.

  15. Generation of localized strain in a thin film piezoelectric to control individual magnetoelectric heterostructures

    SciTech Connect (OSTI)

    Cui, Jizhai; Liang, Cheng-Yen; Sepulveda, Abdon; Carman, Gregory P.; Lynch, Christopher S.; Paisley, Elizabeth A.; Ihlefeld, Jon F.

    2015-08-31

    Experimental results demonstrate the ability of a surface electrode pattern to produce sufficient in-plane strain in a PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) thin film clamped by a Si substrate to control magnetism in a 1000 nm diameter Ni ring. The electrode pattern and the Ni ring/PZT thin film heterostructure were designed using a finite element based micromagnetics code. The magnetoelectric heterostructures were fabricated on the PZT film using e-beam lithography and characterized using magnetic force microscopy. Application of voltage to the electrodes moved one of the “onion” state domain walls. This method enables the development of complex architectures incorporating strain-mediated multiferroic devices.

  16. Orientational Analysis of Molecules in Thin Films | Stanford Synchrotron

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Radiation Lightsource Orientational Analysis of Molecules in Thin Films Monday, September 17, 2012 - 10:00am SSRL Bldg. 137, room 226 Daniel Kaefer The synchrotron-based X-ray absorption spectroscopy is a very powerful tool to unravel the orientation of organic molecules on surfaces or in thin films. This information on the alignment of - most often - highly anisotropic molecules can become crucial if an epitaxial or even crystalline organic growth is desired, if such thin film should serve

  17. FTL Solar | Open Energy Information

    Open Energy Info (EERE)

    FTL Solar develops lightweight, flexible tensile structures embedded with thin-film solar cells. Coordinates: 30.267605, -97.742984 Show Map Loading map......

  18. Magnolia Solar | Open Energy Information

    Open Energy Info (EERE)

    Magnolia Solar Jump to: navigation, search Name: Magnolia Solar Place: Woburn, Massachusetts Zip: 1801 Product: Massachusetts-based thin-film PV startup. Coordinates: 42.479195,...

  19. Shengrui Solar | Open Energy Information

    Open Energy Info (EERE)

    Name: Shengrui Solar Place: Hong Kong Product: Hong Kong headquartered company with thin-film PV production in China. References: Shengrui Solar1 This article is a stub....

  20. ITi Solar | Open Energy Information

    Open Energy Info (EERE)

    Boulder, Colorado Zip: 80303 Region: Rockies Area Sector: Solar Product: Developing thin-film solar that can be printed on an inkjet printer Website: www.itisolar.com...

  1. Structural characterization of impurified zinc oxide thin films

    SciTech Connect (OSTI)

    Trinca, L. M.; Galca, A. C. Stancu, V. Chirila, C. Pintilie, L.

    2014-11-05

    Europium doped zinc oxide (Eu:ZnO) thin films have been obtained by pulsed laser deposition (PLD). 002 textured thin films were achieved on glass and silicon substrates, while hetero-epilayers and homo-epilayers have been attained on single crystal SrTiO{sub 3} and ZnO, respectively. X-ray Diffraction (XRD) was employed to characterize the Eu:ZnO thin films. Extended XRD studies confirmed the different thin film structural properties as function of chosen substrates.

  2. Photovoltaic Single-Crystalline, Thin-Film Cell Basics

    Broader source: Energy.gov [DOE]

    Single-crystalline thin films are made from gallium arsenide (GaAs), a compound semiconductor that is a mixture of gallium and arsenic.

  3. Fast lithium-ion conducting thin film electrolytes integrated...

    Office of Scientific and Technical Information (OSTI)

    Fast lithium-ion conducting thin film electrolytes integrated directly on flexible substrates for high power solid-state batteries. Citation Details In-Document Search Title: Fast ...

  4. New modalities of strain-control of ferroelectric thin films...

    Office of Scientific and Technical Information (OSTI)

    Publisher's Accepted Manuscript: New modalities of strain-control of ferroelectric thin films This content will become publicly available on May 17, 2017 Prev Next Title: New ...

  5. Thin-film lithiation structural transformations imaged in situ...

    Office of Scientific and Technical Information (OSTI)

    by liquid cell transmission electron microscopy. Citation Details In-Document Search Title: Thin-film lithiation structural transformations imaged in situ by liquid cell ...

  6. Utility-scale flat-plate thin film photovoltaics

    SciTech Connect (OSTI)

    None, None

    2009-01-18

    The thin-film photovoltaics section of the Renewable Energy Technology Characterizations describes the technical and economic status of this emerging renewable energy option for electricity supply.

  7. Rechargeable thin film battery and method for making the same

    DOE Patents [OSTI]

    Goldner, Ronald B.; Liu, Te-Yang; Goldner, Mark A.; Gerouki, Alexandra; Haas, Terry E.

    2006-01-03

    A rechargeable, stackable, thin film, solid-state lithium electrochemical cell, thin film lithium battery and method for making the same is disclosed. The cell and battery provide for a variety configurations, voltage and current capacities. An innovative low temperature ion beam assisted deposition method for fabricating thin film, solid-state anodes, cathodes and electrolytes is disclosed wherein a source of energetic ions and evaporants combine to form thin film cell components having preferred crystallinity, structure and orientation. The disclosed batteries are particularly useful as power sources for portable electronic devices and electric vehicle applications where high energy density, high reversible charge capacity, high discharge current and long battery lifetimes are required.

  8. Flexible Thin Film Solid State Lithium Ion Batteries - Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Flexible Thin Film Solid State Lithium Ion Batteries National Renewable Energy Laboratory Contact NREL About This Technology Technology Marketing Summary Batteries are ...

  9. Thin-Film Material Science and Processing | Materials Science...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Thin-Film Material Science and Processing Photo of a stainless steel piece of equipment with multiple hoses and other equipment attached. NREL's expertise focuses on using thin ...

  10. Thin-Film Lithium-Based Electrochromic Devices - Energy Innovation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Find More Like This Return to Search Thin-Film Lithium-Based Electrochromic Devices ... For lithium-based electrochromic cells, the electrolyte contains mobile lithium which ...

  11. Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

    DOE Patents [OSTI]

    Ruffner, Judith A.; Bullington, Jeff A.; Clem, Paul G.; Warren, William L.; Brinker, C. Jeffrey; Tuttle, Bruce A.; Schwartz, Robert W.

    1999-01-01

    A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

  12. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have...

  13. Epitaxial ternary nitride thin films prepared by a chemical solution...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Epitaxial ternary nitride thin films prepared by a chemical solution method Citation Details ... This is the first report of epitaxial growth of ternary ...

  14. Thin film photovoltaic device with multilayer substrate

    DOE Patents [OSTI]

    Catalano, Anthony W.; Bhushan, Manjul

    1984-01-01

    A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

  15. Rechargeable thin-film lithium batteries

    SciTech Connect (OSTI)

    Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

    1993-09-01

    Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

  16. Active superconducting devices formed of thin films

    DOE Patents [OSTI]

    Martens, Jon S.; Beyer, James B.; Nordman, James E.; Hohenwarter, Gert K. G.

    1991-05-28

    Active superconducting devices are formed of thin films of superconductor which include a main conduction channel which has an active weak link region. The weak link region is composed of an array of links of thin film superconductor spaced from one another by voids and selected in size and thickness such that magnetic flux can propagate across the weak link region when it is superconducting. Magnetic flux applied to the weak link region will propagate across the array of links causing localized loss of superconductivity in the links and changing the effective resistance across the links. The magnetic flux can be applied from a control line formed of a superconducting film deposited coplanar with the main conduction channel and weak link region on a substrate. The devices can be formed of any type to superconductor but are particularly well suited to the high temperature superconductors since the devices can be entirely formed from coplanar films with no overlying regions. The devices can be utilized for a variety of electrical components, including switching circuits, amplifiers, oscillators and modulators, and are well suited to microwave frequency applications.

  17. Thin-film Rechargeable Lithium Batteries

    DOE R&D Accomplishments [OSTI]

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, X.

    1993-11-01

    Rechargeable thin films batteries with lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. The cathodes include TiS{sub 2}, the {omega} phase of V{sub 2}O{sub 5}, and the cubic spinel Li{sub x}Mn{sub 2}O{sub 4} with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The development of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25 C of 2 {mu}S/cm. Thin film cells have been cycled at 100% depth of discharge using current densities of 2 to 100 {mu}A/cm{sup 2}. The polarization resistance of the cells is due to the slow insertion rate of Li{sup +} ions into the cathode. Chemical diffusion coefficients for Li{sup +} ions in the three types of cathodes have been estimated from the analysis of ac impedance measurements.

  18. Apparatus for laser assisted thin film deposition

    DOE Patents [OSTI]

    Warner, Bruce E.; McLean, II, William

    1996-01-01

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

  19. Apparatus for laser assisted thin film deposition

    DOE Patents [OSTI]

    Warner, B.E.; McLean, W. II

    1996-02-13

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

  20. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.

    2005-10-01

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  1. A comparison of light-coupling into high and low index nanostructured photovoltaic thin films

    SciTech Connect (OSTI)

    Pfadler, T.; Stärk, M.; Zimmermann, E.; Putnik, M.; Boneberg, J.; Weickert, J. E-mail: lukas.schmidt-mende@uni-konstanz.de; Schmidt-Mende, L. E-mail: lukas.schmidt-mende@uni-konstanz.de

    2015-06-01

    Periodically structured electrodes are typically introduced to thin-film photovoltaics for the purpose of light management. Highly effective light-trapping and optimal in-coupling of light is crucial to enhance the overall device performance in such thin-film systems. Here, wavelength-scale structures are transferred via direct laser interference patterning to electron-selective TiO{sub 2} electrodes. Two representative thin-film solar cell architectures are deposited on top: an organic solar cell featuring blended P3HT:PCBM as active material, and a hybrid solar cell with Sb{sub 2}S{sub 3} as inorganic active material. A direct correlation in the asymmetry in total absorption enhancement and in structure-induced light in-coupling is spectroscopically observed for the two systems. The structuring is shown to be beneficial for the total absorption enhancement if a high n active material is deposited on TiO{sub 2}, but detrimental for a low n material. The refractive indices of the employed materials are determined via spectroscopic ellipsometry. The study outlines that the macroscopic Fresnel equations can be used to investigate the spectroscopically observed asymmetry in light in-coupling at the nanostructured TiO{sub 2} active material interfaces by visualizing the difference in reflectivity caused by the asymmetry in refractive indices.

  2. SSC HHV Solar Technologies JV | Open Energy Information

    Open Energy Info (EERE)

    Technologies JV Place: Ontario, Canada Sector: Solar Product: Canada-based thin film solar panel manufacturing facility. References: SSC & HHV Solar Technologies JV1 This...

  3. Tunable Nanocrystalline CZTS for Solar Photovoltaics with No...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    PDF Document Publication Nanocrystal Summary (230 KB) Example solar cell Example solar cell Technology Marketing Summary Thin-film solar cells are expected to replace the current ...

  4. Xiamen Topunive Technology Co Ltd TP Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar) Place: Xiamen, Fujian Province, China Zip: 361022 Sector: Solar Product: Produce thin-film PV module based flexible solar lighting system, portable and mobile power...

  5. Thin Film Femtosecond Laser Damage Competition

    SciTech Connect (OSTI)

    Stolz, C J; Ristau, D; Turowski, M; Blaschke, H

    2009-11-14

    In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

  6. TEM characterization of nanodiamond thin films.

    SciTech Connect (OSTI)

    Qin, L.-C.; Zhou, D.; Krauss, A. R.; Gruen, D. M.; Chemistry

    1998-05-01

    The microstructure of thin films grown by microwave plasma-enhanced chemical vapor deposition (MPCVD) from fullerene C{sub 60} precursors has been characterized by scanning electron microscopy (SEM), selected-area electron diffraction (SAED), bright-field electron microscopy, high-resolution electron microscopy (HREM), and parallel electron energy loss spectroscopy (PEELS). The films are composed of nanosize crystallites of diamond, and no graphitic or amorphous phases were observed. The diamond crystallite size measured from lattice images shows that most grains range between 3-5 nm, reflecting a gamma distribution. SAED gave no evidence of either sp2-bonded glassy carbon or sp3-bonded diamondlike amorphous carbon. The sp2-bonded configuration found in PEELS was attributed to grain boundary carbon atoms, which constitute 5-10% of the total. Occasionally observed larger diamond grains tend to be highly faulted.

  7. Glow discharge plasma deposition of thin films

    DOE Patents [OSTI]

    Weakliem, Herbert A. (Pennington, NJ); Vossen, Jr., John L. (Bridgewater, NJ)

    1984-05-29

    A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

  8. Rechargeable thin-film electrochemical generator

    DOE Patents [OSTI]

    Rouillard, Roger; Domroese, Michael K.; Hoffman, Joseph A.; Lindeman, David D.; Noel, Joseph-Robert-Gaetan; Radewald, Vern E.; Ranger, Michel; Sudano, Anthony; Trice, Jennifer L.; Turgeon, Thomas A.

    2000-09-15

    An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

  9. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

    SciTech Connect (OSTI)

    Hoye, Robert L. Z. E-mail: jld35@cam.ac.uk; MacManus-Driscoll, Judith L. E-mail: jld35@cam.ac.uk; Muoz-Rojas, David; Nelson, Shelby F.; Illiberi, Andrea; Poodt, Paul

    2015-04-01

    Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

  10. Titanium nitride thin films for minimizing multipactoring

    DOE Patents [OSTI]

    Welch, Kimo M.

    1979-01-01

    Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.

  11. Hangzhou Amplesun Solar Technology Co Ltd AST | Open Energy Informatio...

    Open Energy Info (EERE)

    Co Ltd (AST) Place: Hangzhou, Zhejiang Province, China Product: Producer for a-Si and c-Si thin-film photovoltaic modules, mainly for exportation. Coordinates:...

  12. Sanyo Eneos Solar Inc | Open Energy Information

    Open Energy Info (EERE)

    Solar Inc Jump to: navigation, search Name: Sanyo Eneos Solar Inc. Place: Tokyo, Tokyo, Japan Product: Thin-film joint venture between Sanyo Electric and Nippon Oil. References:...

  13. Solar Notion Inc | Open Energy Information

    Open Energy Info (EERE)

    search Name: Solar Notion Inc Place: Menlo Park, California Zip: 94025 Product: Startup with an undisclosed type of thin-film PV technology. References: Solar Notion Inc1...

  14. FTL Solar LLC | Open Energy Information

    Open Energy Info (EERE)

    Sector: Solar Product: Creator of flexible, tensile structures integrated with thin film solar cells Website: www.ftlsolar.com Coordinates: 40.6498136, -73.9475554 Show Map...

  15. Advanced Solar Photonics | Open Energy Information

    Open Energy Info (EERE)

    Advanced Solar Photonics Place: Lake Mary, Florida Zip: 32746 Product: Florida-based thin film PV module manufacturer. References: Advanced Solar Photonics1 This article is...

  16. Moncada Solar Equipment | Open Energy Information

    Open Energy Info (EERE)

    search Name: Moncada Solar Equipment Place: Italy Product: Developer and manufacturer of thin-film modules. References: Moncada Solar Equipment1 This article is a stub. You can...

  17. Well-Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells: Preprint

    SciTech Connect (OSTI)

    Page, M. R.; Iwaniczko, E.; Xu, Y.; Wang, Q.; Yan, Y.; Roybal, L.; Branz, H. M.; Wang, T. H.

    2006-05-01

    We have developed hydrogenated amorphous silicon (a Si:H) back contacts to both p- and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250 C) and replace the standard diffused or alloyed back-surface-field contacts used in single-heterojunction (front-emitter only) cells. High-quality back contacts require excellent surface passivation, indicated by a low surface recombination velocity of minority-carriers (S) or a high open-circuit voltage (Voc). The back contact must also provide good conduction for majority carriers to the external circuit, as indicated by a high light I-V fill factor. We use hot-wire chemical vapor deposition (HWCVD) to grow a-Si:H layers for both the front emitters and back contacts. Our improved a-Si:H back contacts contribute to our recent achievement of a confirmed 18.2% efficiency in double-heterojunction silicon solar cells on p type textured silicon wafers.

  18. Quantification of thin film crystallographic orientation using X-ray diffraction with an area detector

    SciTech Connect (OSTI)

    Baker, Jessica L; Jimison, Leslie H; Mannsfeld, Stefan; Volkman, Steven; Yin, Shong; Subramanian, Vivek; Salleo, Alberto; Alivisatos, A Paul; Toney, Michael F

    2010-02-19

    As thin films become increasingly popular (for solar cells, LEDs, microelectronics, batteries), quantitative morphological information is needed to predict and optimize the film's electronic, optical and mechanical properties. This quantification can be obtained quickly and easily with X-ray diffraction using an area detector and synchrotron radiation in two simple geometries. In this paper, we describe a methodology for constructing complete pole figures for thin films with fiber texture (isotropic in-plane orientation). We demonstrate this technique on semicrystalline polymer films, self-assembled nanoparticle semiconductor films, and randomly-packed metallic nanoparticle films. This method can be immediately implemented to help understand the relationship between film processing and microstructure, enabling the development of better and less expensive electronic and optoelectronic devices.

  19. Development of high, stable-efficiency triple-junction a-Si alloy solar cells. Annual technical progress report, October 1995--October 1996

    SciTech Connect (OSTI)

    Deng, X.; Izu, M.; Jones, S.J.; Kopf, R.

    1997-04-01

    The overall objective of this amorphous silicon research program is to develop high efficiency a-Si solar cells and to develop and improve processes for large area deposition of a-Si solar cells and modules. The knowledge obtained and technologies demonstrated in this program will be incorporated into ECD`s continuous roll-to-roll deposition process to further enhance its photovoltaic manufacturing technology.

  20. The state of the art of thin-film photovoltaics

    SciTech Connect (OSTI)

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

  1. Method of producing solution-derived metal oxide thin films

    DOE Patents [OSTI]

    Boyle, Timothy J.; Ingersoll, David

    2000-01-01

    A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

  2. Sol-gel-derived Epitaxial Nanocomposite Thin Films with Large...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sol-gel-derived Epitaxial Nanocomposite Thin Films with Large Sharp Magnetoelectric Effect Home Author: B. Liu, T. Sun, J. He, V. P. Dravid Year: 2010 Abstract: Nanostructures of...

  3. Method for making surfactant-templated thin films

    DOE Patents [OSTI]

    Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hong You

    2010-08-31

    An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  4. Improving the Cycling Life of Aluminum and Germanium Thin Films...

    Office of Scientific and Technical Information (OSTI)

    Li-Ion Batteries. Citation Details In-Document Search Title: Improving the Cycling Life of Aluminum and Germanium Thin Films for use as Anodic Materials in Li-Ion Batteries. You ...

  5. Self-Assembling Process for Fabricating Tailored Thin Films

    ScienceCinema (OSTI)

    None

    2010-01-08

    A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

  6. Self-Assembling Process for Fabricating Tailored Thin Films

    ScienceCinema (OSTI)

    Sandia

    2009-09-01

    A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

  7. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique ... films from highly ordered one--, two- and three-dimensional arrays of gold nanoparticles. ...

  8. Orientational Analysis of Molecules in Thin Films | Stanford...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Molecules in Thin Films Monday, September 17, 2012 - 10:00am SSRL Bldg. 137, room 226 Daniel Kaefer The synchrotron-based X-ray absorption spectroscopy is a very powerful tool to...

  9. Fluorination of amorphous thin-film materials with xenon fluoride

    DOE Patents [OSTI]

    Weil, R.B.

    1987-05-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  10. Improving the Cycling Life of Aluminum and Germanium Thin Films...

    Office of Scientific and Technical Information (OSTI)

    in Li-Ion Batteries. Citation Details In-Document Search Title: Improving the Cycling Life of Aluminum and Germanium Thin Films for use as Anodic Materials in Li-Ion Batteries. ...

  11. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-06-01

    This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

  12. Method for making surfactant-templated thin films

    DOE Patents [OSTI]

    Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

    2002-01-01

    An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  13. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of...

  14. CeO2 Thin Films Nan Yang, Alex Belianinov...

    Office of Scientific and Technical Information (OSTI)

    ... transfer 3 of ions and energy can take place, especially upon variation of the gas environment. In addition, in the case of our thin films, the large in-plane geometry factor ...

  15. Flexible, transparent thin film transistors raise hopes for flexible...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of the thin-film transistor, fabricated using single-atom-thick layers of graphene and tungsten diselenide, among other materials. The white scale bar shows 5 microns, which is...

  16. Fluorination of amorphous thin-film materials with xenon fluoride

    DOE Patents [OSTI]

    Weil, Raoul B. (Haifa, IL)

    1988-01-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  17. Measurement of Transient Atomic-scale Displacements in Thin Films...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Measurement of Transient Atomic-scale Displacements in Thin Films with Picosecond and ... The inset shows a streak camera measurement of the x-ray pulse duration. Ultrafast x-ray ...

  18. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Guided Self-Assembly of Gold Thin Films Print Wednesday, 21 November 2012 12:18 Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies.

  19. Lead-free Thin Film Piezoelectric Devices - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vehicles and Fuels Vehicles and Fuels Find More Like This Return to Search Lead-free Thin Film Piezoelectric Devices Lawrence Berkeley National Laboratory Contact LBL About This Technology Technology Marketing SummaryIn a breakthrough discovery, Ramamoorthy Ramesh, Robert Zeches, and their research team at Berkeley Lab have developed a technology for lead-free piezoelectric materials using thin-film bismuth ferrite. In addition to being less hazardous to human health and the environment, the

  20. Simple flash evaporator for making thin films of compounds

    SciTech Connect (OSTI)

    Hemanadhan, M.; Bapanayya, Ch.; Agarwal, S. C. [Department of Physics, Indian Institute of Technology, Kanpur 208016 (India)

    2010-07-15

    A simple and compact arrangement for flash evaporation is described. It uses a cell phone vibrator for powder dispensing that can be incorporated into a vacuum deposition chamber without any major alterations. The performance of the flash evaporation system is checked by making thin films of the optical memory chalcogenide glass Ge{sub 2}Sb{sub 2}Te{sub 5} (GST). Energy dispersive x-ray analysis shows that the flash evaporation preserves the stoichiometry in thin films.

  1. Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Ozone | Argonne National Laboratory Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone Title Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone Publication Type Journal Article Year of Publication 2016 Authors Mane, AU, Allen, AJ, Kanjolia, RK, Elam, JW Journal Journal of Physical Chemistry C Volume 120 Start Page 9874 Issue 18 Pagination 10 Date Published 04182016 Abstract We investigated the atomic layer deposition (ALD)

  2. Charge Transport in Thin Film Ionomers | Argonne Leadership Computing

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Characters Characters Meet the characters of the game! Meet the characters of the game! Dr Raoul Fernandez's profile Helena Edison's profile Jerome Zabel's profile Nancy Sanders' profile Roc Bridges' profile Facility

    Model of a thin film Nafion ionomer (green translucent surface) in a fuel cell membrane/catalyst interface Model of a thin film Nafion ionomer (green translucent surface) in a fuel cell membrane/catalyst interface that forms interfaces with both the electrode and air (bottom

  3. Conductive Polymer/Fullerene Blend Thin Films with Honeycomb Framework -

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy Innovation Portal Advanced Materials Advanced Materials Find More Like This Return to Search Conductive Polymer/Fullerene Blend Thin Films with Honeycomb Framework Brookhaven National Laboratory Contact BNL About This Technology Publications: PDF Document Publication Structural dynamics and charge transfer via complexation with fullerene in large area conjugated polymer honeycomb thin films (728 KB) Technology Marketing Summary This composite conductive polymer/fullerene blend

  4. Methods for preparing colloidal nanocrystal-based thin films

    DOE Patents [OSTI]

    Kagan, Cherie R.; Fafarman, Aaron T.; Choi, Ji-Hyuk; Koh, Weon-kyu; Kim, David K.; Oh, Soong Ju; Lai, Yuming; Hong, Sung-Hoon; Saudari, Sangameshwar Rao; Murray, Christopher B.

    2016-05-10

    Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.

  5. Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism

    SciTech Connect (OSTI)

    Wang Junzhuan; Suendo, V.; Abramov, A.; Yu Linwei; Roca i Cabarrocas, Pere

    2010-11-29

    Here, we investigate the enhanced tunable photoluminescence (PL) of hydrogenated polymorphous silicon carbon (pm-Si{sub 1-x}C{sub x}:H) thin films fabricated in a plasma enhanced chemical vapor deposition system. The silicon nanocrystal (nc-Si) inclusions are formed during gas-phase nucleation and incorporated in the hydrogenated amorphous silicon carbon (a-SiC:H) matrix. The nc-Si provides high-quality recombination centers for the photogenerated carriers in the pm-Si{sub 1-x}C{sub x}:H material, while the a-SiC:H matrix plays a role of sensitizer. We elucidate and provide experimental evidence for this excitation-transfer mechanism. Strongly enhanced PL performance can be achieved by effective matrix passivation that favors a diffusion-driven carrier recombination in the nc-Si centers.

  6. Johanna Solar Technology GmbH JST | Open Energy Information

    Open Energy Info (EERE)

    Havel, Brandenburg, Germany Zip: D-14772 Sector: Solar Product: German manufacturer of copper-indium-gallium-sulphide-selenium (CIGSSe) thin-film solar modules. References: Johanna...

  7. CHINT Solar Co Ltd aka Astronergy | Open Energy Information

    Open Energy Info (EERE)

    A subsidiary company of CHINT Group, producing multicrystalline and monocrystalline solar cells, modules, thin-film solar cells and PV application products. Coordinates:...

  8. Envitec Solar GmbH | Open Energy Information

    Open Energy Info (EERE)

    Austria Sector: Solar Product: Domiciled in Austria, Envitec Solar operates as the thin-film module manufacturing arm of Envitec Energy. Coordinates: 48.056085,...

  9. Best Solar Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Best Solar Co Ltd Jump to: navigation, search Name: Best Solar Co Ltd Place: Suzhou, Jiangsu Province, China Sector: Solar Product: Thin-film solar startup Best Solar was set up by...

  10. Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications Preprint H.S. Ullal and B. von Roedern To be presented at the 22nd European Photovoltaic Solar Energy Conference (PVSEC) and Exhibition Milan, Italy September 3-7, 2007 Conference Paper NREL/CP-520-42058 September 2007 NREL is operated by Midwest Research Institute ● Battelle Contract No. DE-AC36-99-GO10337 NOTICE The submitted manuscript has been offered by an employee of the Midwest

  11. Microstructural and mechanical characteristics of Ni–Cr thin films

    SciTech Connect (OSTI)

    Petley, Vijay; Sathishkumar, S.; Thulasi Raman, K.H.; Rao, G.Mohan; Chandrasekhar, U.

    2015-06-15

    Highlights: • Ni–Cr thin films of varied composition deposited by DC magnetron co-sputtering. • Thin film with Ni–Cr: 80–20 at% composition exhibits most distinct behavior. • The films were tensile tested and exhibited no cracking till the substrate yielding. - Abstract: Ni–Cr alloy thin films have been deposited using magnetron co-sputtering technique at room temperature. Crystal structure was evaluated using GIXRD. Ni–Cr solid solution upto 40 at% of Cr exhibited fcc solid solution of Cr in Ni and beyond that it exhibited bcc solid solution of Ni in Cr. X-ray diffraction analysis shows formation of (1 1 1) fiber texture in fcc and (2 2 0) fiber texture in bcc Ni–Cr thin films. Electron microscopy in both in-plane and transverse direction of the film surface revealed the presence of columnar microstructure for films having Cr upto 40 at%. Mechanical properties of the films are evaluated using nanoindentation. The modulus values increased with increase of Cr at% till the film is fcc. With further increase in Cr at% the modulus values decreased. Ni–Cr film with 20 at% Ni exhibits reduction in modulus and is correlated to the poor crystallization of the film as reflected in XRD analysis. The Ni–Cr thin film with 80 at% Ni and 20 at% Cr exhibited the most distinct columnar structure with highest electrical resistivity, indentation hardness and elastic modulus.

  12. Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

    SciTech Connect (OSTI)

    Ruffner, J.A.; Clem, P.G.; Tuttle, B.A. [and others

    1998-01-01

    Uncooled pyroelectric IR imaging systems, such as night vision goggles, offer important strategic advantages in battlefield scenarios and reconnaissance surveys. Until now, the current technology for fabricating these devices has been limited by low throughput and high cost which ultimately limit the availability of these sensor devices. We have developed and fabricated an alternative design for pyroelectric IR imaging sensors that utilizes a multilayered thin film deposition scheme to create a monolithic thin film imaging element on an active silicon substrate for the first time. This approach combines a thin film pyroelectric imaging element with a thermally insulating SiO{sub 2} aerogel thin film to produce a new type of uncooled IR sensor that offers significantly higher thermal, spatial, and temporal resolutions at a substantially lower cost per unit. This report describes the deposition, characterization and optimization of the aerogel thermal isolation layer and an appropriate pyroelectric imaging element. It also describes the overall integration of these components along with the appropriate planarization, etch stop, adhesion, electrode, and blacking agent thin film layers into a monolithic structure. 19 refs., 8 figs., 6 tabs.

  13. Advances in Thin-Film Proton-Reaction Cell Experiments

    SciTech Connect (OSTI)

    George H. Miley; Giovanna Selvaggi; Andy Tate; Carlos Castano

    2000-11-12

    Thin-film electrodes (layers of the order of thousands of angstroms) offer several very important advantages for cold fusion research: Good reproducibility has been demonstrated, an extremely high power density is obtained in the thin film, and reaction rates can be optimized by appropriate selection of materials and interfaces. The motivation for thin films stems from the Swimming Electron Theory, which predicts that enhanced reaction rates can occur with the careful selection of interface materials. Recent experiments have concentrated on the measurement of the H or D loading (atoms H/atom metal), using thin (1-m-long, 50-{mu}m-diam) wires to simulate thin films. Wires facilitate measurement of the loading as a function of time during a run by use of a simple resistivity measurement. These experiments show that excess heat production is associated with a dynamic resistivity oscillation, both being suddenly initiated (coincidence within 2 to 3 s) when a D/Pd loading ratio >0.9 9 is achieved. The counterpart of these experiments involves use of a unique compact electrode design where thin films are coated onto a small glass slide to provide both the anode and cathode. Experiments with these compact electrodes have consistently produced >100 W/cm{sup 3} metal.

  14. Properties of zirconia thin films deposited by laser ablation

    SciTech Connect (OSTI)

    Cancea, V. N.; Filipescu, M.; Colceag, D.; Dinescu, M.; Mustaciosu, C.

    2013-11-13

    Zirconia thin films have been deposited by laser ablation of a ceramic ZrO{sub 2} target in vacuum or in oxygen background at 0.01 mbar. The laser beam generated by an ArF laser (λ=193 nm, ν=40 Hz) has been focalized on the target through a spherical lens at an incident angle of 45°. The laser fluence has been established to a value from 2.0 to 3.4 Jcm{sup −2}. A silicon (100) substrate has been placed parallel to the target, at a distance of 4 cm, and subsequently has been heated to temperatures ranging between 300 °C and 600 °C. Thin films morphology has been characterized by atomic force microscopy and secondary ion mass spectrometry. Biocompatibility of these thin films has been assessed by studying the cell attachment of L929 mouse fibroblasts.

  15. Shape variation of micelles in polymer thin films

    SciTech Connect (OSTI)

    Zhou, Jiajia Shi, An-Chang

    2014-01-14

    The equilibrium properties of block copolymer micelles confined in polymer thin films are investigated using self-consistent field theory. The theory is based on a model system consisting of AB diblock copolymers and A homopolymers. Two different methods, based on the radius of gyration tensor and the spherical harmonics expansion, are used to characterize the micellar shape. The results reveal that the morphology of micelles in thin films depends on the thickness of the thin films and the selectivity of the confining surfaces. For spherical (cylindrical) micelles, the spherical (cylindrical) symmetry is broken by the presence of the one-dimensional confinement, whereas the top-down symmetry is broken by the selectivity of the confining surfaces. Morphological transitions from spherical or cylindrical micelles to cylinders or lamella are predicted when the film thickness approaches the micellar size.

  16. Thin-film Rechargeable Lithium Batteries for Implantable Devices

    DOE R&D Accomplishments [OSTI]

    Bates, J. B.; Dudney, N. J.

    1997-05-01

    Thin films of LiCoO{sub 2} have been synthesized in which the strongest x ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001%/cycle or less. The reliability and performance of Li LiCoO{sub 2} thin film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.

  17. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

    DOE Patents [OSTI]

    Miller, Joel S.; Pokhodnya, Kostyantyn I.

    2003-12-09

    A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

  18. Effect of current injection into thin-film Josephson junctions

    SciTech Connect (OSTI)

    Kogan, V. G.; Mints, R. G.

    2014-11-11

    New thin-film Josephson junctions have recently been tested in which the current injected into one of the junction banks governs Josephson phenomena. One thus can continuously manage the phase distribution at the junction by changing the injected current. Our method of calculating the distribution of injected currents is also proposed for a half-infinite thin-film strip with source-sink points at arbitrary positions at the film edges. The strip width W is assumed small relative to Λ=2λ2/d;λ is the bulk London penetration depth of the film material and d is the film thickness.

  19. Method of improving field emission characteristics of diamond thin films

    DOE Patents [OSTI]

    Krauss, A.R.; Gruen, D.M.

    1999-05-11

    A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.

  20. Method of improving field emission characteristics of diamond thin films

    DOE Patents [OSTI]

    Krauss, Alan R.; Gruen, Dieter M.

    1999-01-01

    A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

  1. Progress and issues in polycrystalline thin-film PV technologies

    SciTech Connect (OSTI)

    Zweibel, K.; Ullal, H.S.; Roedern, B. von

    1996-05-01

    Substantial progress has occurred in polycrystalline thin-film photovoltaic technologies in the past 18 months. However, the transition to first-time manufacturing is still under way, and technical problems continue. This paper focuses on the promise and the problems of the copper indium diselenide and cadmium telluride technologies, with an emphasis on continued R&D needs for the near-term transition to manufacturing and for next-generation improvements. In addition, it highlights the joint R&D efforts being performed in the U.S. Department of Energy/National Renewable Energy Laboratory Thin-Film Photovoltaic Partnership Program.

  2. Effect of current injection into thin-film Josephson junctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kogan, V. G.; Mints, R. G.

    2014-11-11

    New thin-film Josephson junctions have recently been tested in which the current injected into one of the junction banks governs Josephson phenomena. One thus can continuously manage the phase distribution at the junction by changing the injected current. Our method of calculating the distribution of injected currents is also proposed for a half-infinite thin-film strip with source-sink points at arbitrary positions at the film edges. The strip width W is assumed small relative to Λ=2λ2/d;λ is the bulk London penetration depth of the film material and d is the film thickness.

  3. Stable a-Si:H Based Multijunction Solar Cells with Guidance from Real Time Optics: Annual Report, Phase I: 17 July 1998-16 October 1999

    SciTech Connect (OSTI)

    Wronski, C.R.; Collins, R.W.; Jiao, L.; Ferlauto, A.; Rovira, P.I.; Koval, R.J.; Lu, Z.; Niu, X.

    2000-08-29

    This summary describes tasks of novel improved intrinsic materials for multijunction solar cells, insights into improved stability in materials and solar cells, optimization of solar cell performance with improved intrinsic layers, and optimization of multijunction solar cells. The report characterizes a protocrystalline a-Si:H film growth regime where thin samples retain their amorphous state when their growth time or thickness is limited to small values, even when films are deposited with high hydrogen dilution that results in microcrystalline thick films. The Staebler-Wronski degradation kinetics of films and devices are systematically studied as a function of hydrogen dilution.

  4. Ames Lab 101: Improving Solar Cell Efficiency

    ScienceCinema (OSTI)

    Biswas, Rana

    2012-08-29

    Rana Biswas, a scientist with the Ames Laboratory, discusses his team's research in creating more efficient solar cells and working with Iowa Thin Film to produce these cells.

  5. Bangkok Solar Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Bangkok Solar Co Ltd Place: Chachoengsao, Thailand Zip: 24140 Product: Manufacturer of thin-film amorphous silicon modules, distributes in Europe through Reinecke + Pohl....

  6. All Day Solar | Open Energy Information

    Open Energy Info (EERE)

    stage company planning to manufacture flexible thin-film PV modules for vehicular rooftop applications. References: All Day Solar1 This article is a stub. You can help...

  7. Solar Torx New Solar Ventures | Open Energy Information

    Open Energy Info (EERE)

    Torx New Solar Ventures Jump to: navigation, search Name: Solar Torx New Solar Ventures Place: Arizona Product: Set up in November 2005 to secure finance for a thin-film...

  8. Nanoscale Spin-State Ordering in LaCoO3 Epitaxial Thin Films...

    Office of Scientific and Technical Information (OSTI)

    Nanoscale Spin-State Ordering in LaCoO3 Epitaxial Thin Films Citation Details In-Document Search Title: Nanoscale Spin-State Ordering in LaCoO3 Epitaxial Thin Films Authors: Kwon, ...

  9. Solid-solution CrCoCuFeNi high-entropy alloy thin films synthesized...

    Office of Scientific and Technical Information (OSTI)

    Solid-solution CrCoCuFeNi high-entropy alloy thin films synthesized by sputter deposition Title: Solid-solution CrCoCuFeNi high-entropy alloy thin films synthesized by sputter ...

  10. PID Failure of c-Si and Thin-Film Modules and Possible Correlation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents ...

  11. Buffer layer for thin film structures (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Buffer layer for thin film structures Citation Details In-Document Search Title: Buffer layer for thin film structures A composite structure including a base substrate and a layer...

  12. Iron Pyrite Thin Films Synthesized from an Fe(acac)[subscript...

    Office of Scientific and Technical Information (OSTI)

    Iron Pyrite Thin Films Synthesized from an Fe(acac)subscript 3 Ink Citation Details In-Document Search Title: Iron Pyrite Thin Films Synthesized from an Fe(acac)subscript 3 Ink...

  13. Thin-film transistors based on p-type Cu{sub 2}O thin films produced at room temperature

    SciTech Connect (OSTI)

    Fortunato, Elvira; Figueiredo, Vitor; Barquinha, Pedro; Elamurugu, Elangovan; Goncalves, Goncalo; Martins, Rodrigo; Park, Sang-Hee Ko; Hwang, Chi-Sun

    2010-05-10

    Copper oxide (Cu{sub 2}O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu{sub 2}O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm{sup 2}/V s and an on/off ratio of 2x10{sup 2}.

  14. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

    SciTech Connect (OSTI)

    Zhou, Dayu, E-mail: zhoudayu@dlut.edu.cn [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China) [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Xu, Jin [Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian 116023 (China)] [Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian 116023 (China); Li, Qing; Guan, Yan [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China)] [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Cao, Fei; Dong, Xianlin [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)] [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Mller, Johannes [Fraunhofer IPMS-CNT, Koengisbruecker Strasse 180, 01109 Dresden (Germany)] [Fraunhofer IPMS-CNT, Koengisbruecker Strasse 180, 01109 Dresden (Germany); Schenk, Tony; Schrder, Uwe [Namlab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden (Germany)] [Namlab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden (Germany)

    2013-11-04

    Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO{sub 2} film under bipolar pulsed-field operation. High field cycling causes a wake-up in virgin pinched polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up.

  15. Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

    SciTech Connect (OSTI)

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

    2013-06-01

    We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

  16. Oregon's Solar Advantage

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    SolaicxMEMC IngotsWafers Sanyo Solar Oregon IngotsWafers y g g Peak Sun Polysilicon SoloPower Thin Film CIGs Solar Supply Chain Incentives Incentives Compan T pe Company Type PV ...

  17. Method of preparing thin film polymeric gel electrolytes

    DOE Patents [OSTI]

    Derzon, Dora K.; Arnold, Jr., Charles

    1997-01-01

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  18. Method of preparing thin film polymeric gel electrolytes

    DOE Patents [OSTI]

    Derzon, D.K.; Arnold, C. Jr.

    1997-11-25

    Novel hybrid thin film electrolyte is described, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1}cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  19. Ferroelastic switching in a layered-perovskite thin film

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Chuanshou; Ke, Xiaoxing; Wang, Jianjun; Liang, Renrong; Luo, Zhenlin; Tian, Yu; Yi, Di; Zhang, Qintong; Wang, Jing; Han, Xiu -Feng; et al

    2016-02-03

    Here, a controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layeredperovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90 within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelasticmore » switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.« less

  20. Front and backside processed thin film electronic devices

    DOE Patents [OSTI]

    Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang; Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.

    2012-01-03

    This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  1. Method for double-sided processing of thin film transistors

    DOE Patents [OSTI]

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2008-04-08

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  2. Front and backside processed thin film electronic devices

    DOE Patents [OSTI]

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2010-10-12

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  3. Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

    SciTech Connect (OSTI)

    Zhang, Yijun; Liu, Ming E-mail: wren@mail.xjtu.edu.cn Ren, Wei E-mail: wren@mail.xjtu.edu.cn; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang E-mail: wren@mail.xjtu.edu.cn

    2015-05-07

    One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe{sub 3}O{sub 4} thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe{sub 3}O{sub 4} thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H{sub 2}/Ar at 400 °C, the as-grown α−Fe{sub 2}O{sub 3} sample is reduced to Fe{sub 3}O{sub 4} phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications.

  4. Perovskite phase thin films and method of making

    DOE Patents [OSTI]

    Boyle, Timothy J.; Rodriguez, Mark A.

    2000-01-01

    The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

  5. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, III, Jerome J.; Halpern, Bret L.

    1993-01-01

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

  6. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    SciTech Connect (OSTI)

    Dutta, P. Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V.; Zheng, N.; Ahrenkiel, P.; Martinez, J.

    2014-09-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ?10{sup 7?}cm{sup ?2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300?cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  7. Comment on “Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations” [J. Appl. Phys. 115, 094501 (2014)

    SciTech Connect (OSTI)

    Abenante, L.

    2015-01-14

    In the above paper, an analytical approach including a new solution to the differential diffusion equation in illuminated quasi-neutral regions (QNR) is exploited to calculate the short-circuit current density (J{sub sc}), open-circuit voltage (V{sub oc}), fill factor (FF), and efficiency (η) of light-trapping (LT) c-Si solar cells with a given structure. Comparisons with numerical results calculated by the Silvaco ATLAS device simulator in the same LT cells show that the analytical results are systematically overestimated. According to the authors, the inaccuracies in J{sub sc}, V{sub oc}, and η are due to the fact that assuming ideal collection from space-charge region (SCR) and using the superposition approximation introduce systematic errors into analytical models. In this comment, an analytical approach using reported solutions to the transport equations in QNR and SCR, where ideal collection from SCR is assumed and the superposition approximation is used, is shown to agree with both the Silvaco and PC1d numerical approaches in calculating J{sub sc}, V{sub oc}, and η, in the same LT devices as considered in the commented paper. Reasons for the inaccuracies detected in the commented paper are suggested.

  8. Solar collector

    SciTech Connect (OSTI)

    Wilhelm, W.G.

    1982-05-04

    The field of this invention is solar collectors, and more particularly, the invention pertains to a flat plate collector that employs high performance thin films. The solar collector of this invention overcomes several problems in this field, such as excessive hardware, cost and reliability, and other prior art drawbacks outlined in the specification. In the preferred form, the apparatus features a substantially rigid planar frame. A thin film window is bonded to one planar side of the frame. An absorber of laminate construction is comprised of two thin film layers that are sealed perimetrically. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. Absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  9. Graphene oxide/carbon nanoparticle thin film based IR detector: Surface properties and device characterization

    SciTech Connect (OSTI)

    Chowdhury, Farzana Aktar; Hossain, Mohammad Abul; Uchida, Koji; Tamura, Takahiro; Sugawa, Kosuke; Mochida, Tomoaki; Otsuki, Joe; Mohiuddin, Tariq; Boby, Monny Akter; Alam, Mohammad Sahabul

    2015-10-15

    This work deals with the synthesis, characterization, and application of carbon nanoparticles (CNP) adorned graphene oxide (GO) nanocomposite materials. Here we mainly focus on an emerging topic in modern research field presenting GO-CNP nanocomposite as a infrared (IR) radiation detector device. GO-CNP thin film devices were fabricated from liquid phase at ambient condition where no modifying treatments were necessary. It works with no cooling treatment and also for stationary objects. A sharp response of human body IR radiation was detected with time constants of 3 and 36 sec and radiation responsivity was 3 mAW{sup −1}. The current also rises for quite a long time before saturation. This work discusses state-of-the-art material developing technique based on near-infrared photon absorption and their use in field deployable instrument for real-world applications. GO-CNP-based thin solid composite films also offer its potentiality to be utilized as p-type absorber material in thin film solar cell, as well.

  10. Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

    SciTech Connect (OSTI)

    2008-06-30

    The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology was characterized

  11. Encapsulation Advancements Extend Life of Thin-Film PV; The Spectrum of Clean Energy Innovation (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2010-06-01

    Fact sheet describing NREL's transparent metal oxide coating used to protect thin-film photovoltaic modules.

  12. Stable thin film resistors using double layer structure

    SciTech Connect (OSTI)

    Jia, Q.X.; Lee, H.J.; Ma, E.; Anderson, W.A.; Collins, F.M.

    1995-06-01

    Highly stable bilayer thin film resistors, which consist of an underlying layer of tantalum nitride and of a capping layer of ruthenium oxide, were developed by taking advantage of the desired characteristics of two different materials in a single system. The resistors fabricated in such a way were highly stable under power loading or thermal cycling. Resistors with one digit temperature coefficient of resistance could be easily controlled by the layer thickness ratio of the tantalum nitride to the ruthenium oxide and the {ital ex} {ital situ} annealing temperature or duration. Auger electron spectroscopy depth profile on the thin films indicates that the ruthenium oxide layer is well defined for the as-deposited form. Nevertheless, interdiffusion takes place after thermal treatment of the bilayer which is used to tune the temperature coefficient of resistance and to stabilize the resistance of the resistors.

  13. Method for formation of thin film transistors on plastic substrates

    DOE Patents [OSTI]

    Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

    1998-10-06

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

  14. Method for formation of thin film transistors on plastic substrates

    DOE Patents [OSTI]

    Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

    1998-10-06

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

  15. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, Scot P.; Chamberlin, Rhodes

    1997-10-07

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  16. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, Scot P.; Chamberlin, Rhodes

    1999-02-09

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  17. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, S.P.; Chamberlin, R.

    1999-02-09

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

  18. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, S.P.; Chamberlin, R.

    1997-10-07

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

  19. TI--CR--AL--O thin film resistors

    DOE Patents [OSTI]

    Jankowski, Alan F.; Schmid, Anthony P.

    2000-01-01

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  20. Thin film battery and method for making same

    DOE Patents [OSTI]

    Bates, John B.; Dudney, Nancy J.; Gruzalski, Greg R.; Luck, Christopher F.

    1994-01-01

    Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

  1. Thin film battery and method for making same

    DOE Patents [OSTI]

    Bates, J.B.; Dudney, N.J.; Gruzalski, G.R.; Luck, C.F.

    1994-08-16

    Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode. Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between [minus]15 C and 150 C. 9 figs.

  2. Thin-Film Reliability Trends Toward Improved Stability: Preprint

    SciTech Connect (OSTI)

    Jordan, D. C.; Kurtz, S. R.

    2011-07-01

    Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (Rd) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2+/-0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

  3. Status of High Performance PV: Polycrystalline Thin-Film Tandems

    SciTech Connect (OSTI)

    Symko-Davies, M.

    2005-02-01

    The High-Performance Photovoltaic (HiPerf PV) Project was initiated by the U.S. Department of Energy to substantially increase the viability of photovoltaics (PV) for cost-competitive applications so that PV can contribute significantly to our energy supply and our environment. The HiPerf PV Project aims at exploring the ultimate performance limits of existing PV technologies, approximately doubling their sunlight-to-electricity conversion efficiencies during its course. This work includes bringing thin-film cells and modules toward 25% and 20% efficiencies, respectively, and developing multijunction concentrator cells and modules able to convert more than one-third of the sun's energy to electricity (i.e., 33% efficiency). This paper will address recent accomplishments of the NREL in-house research effort involving polycrystalline thin-film tandems, as well as the research efforts under way in the subcontracted area.

  4. Characterization of Thin Films by XAFS: Application to Spintronics Materials

    SciTech Connect (OSTI)

    Heald, Steve M.; Kaspar, Tiffany C.; Droubay, Timothy C.; Chambers, Scott A.

    2009-10-25

    X-ray absorption fine structure (XAFS) has proven very valuable in characterizing thin films. This is illustrated with some examples from the area of diluted magnetic semiconductor (DMS) materials for spintronics applications. A promising route to DMS materials is doping of oxides such as TiO2 and ZnO with magnetic atoms such as Co. These can be grown as epitaxial thin films on various substrates. XAFS is especially valuable for characterizing the dopant atoms. The near edge region is sensitive to the symmetry of the bonding and valence of the dopants, and the extended XAFS can determine the details of the lattice site. XAFS is also valuable for detecting metallic nanoparticles. These can be difficult to detect by other methods, and can give a spurious magnetic signal. The power of XAFS is illustrated by examples from studies on Co doped ZnO films.

  5. PowerFilm Solar Inc | Open Energy Information

    Open Energy Info (EERE)

    Solar Inc Place: Boone, Iowa Zip: 50036 7538 Product: Developer of a method for manufacturing thin-film amorphous silicon modules, from silane gas and plastic substrate, using...

  6. Texas school district enlightens students with solar | Department...

    Broader source: Energy.gov (indexed) [DOE]

    will include three different photovoltaic solar cell technologies. The projects will use multi-crystalline cells, thin-film amorphous cells and cylindrical cells, and they ...

  7. High Efficiency Low-Cost Perovskite Solar Cell Modules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (moisture stability not yet demonstrated) (A) Development of 3"x3" solar module temperature controlled thin-film coating * Dr. blading technique: Drag solution on hot-substrate ...

  8. Biomass and Solar Technologies Lauded - News Releases | NREL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    chemicals, and a thin-film solar cell that produces electricity directly from sunlight, which has greater efficiency, and is lighter weight and more flexible than previous devices. ...

  9. NREL and Solarex Partner to Expand Development of Solar Technology

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solarex Partner to Expand Development of Solar Technology For more information contact: ... Solarex of Frederick, Md. to conduct further research on thin film photovoltaic modules. ...

  10. Hybrid Organic-Inorganic Halide Perovskite Solar Cells | Department...

    Energy Savers [EERE]

    remain before perovskite solar cells can become a competitive commercial technology. ... semiconductor applications, including thin-film transistors and light-emitting diodes, ...

  11. NREL Studies Carrier Separation and Transport in Perovskite Solar...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    critical need for understanding this new materialdevice and opens the door to a new research and development path by recognizing similarities to inorganic thin-film solar cells. ...

  12. Genesis Solar Singapore formerly STP Production | Open Energy...

    Open Energy Info (EERE)

    search Name: Genesis Solar Singapore (formerly STP Production) Place: Singapore Product: Thin-film silicon PV company in Singapore, in which a 75% stake was bought by Genesis...

  13. Shandong Sunvim Solar Technology Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Technology Co Ltd Place: Shandong Province, China Product: Chinese manufacturer of CIGS thin film PV project. References: Shandong Sunvim Solar Technology Co Ltd1 This article...

  14. Synthesis of thin films and materials utilizing a gaseous catalyst

    DOE Patents [OSTI]

    Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

    2013-10-29

    A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

  15. Substrates suitable for deposition of superconducting thin films

    DOE Patents [OSTI]

    Feenstra, Roeland; Boatner, Lynn A.

    1993-01-01

    A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

  16. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal,

  17. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal,

  18. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal,

  19. Preparation of redox polymer cathodes for thin film rechargeable batteries

    DOE Patents [OSTI]

    Skotheim, T.A.; Lee, H.S.; Okamoto, Yoshiyuki.

    1994-11-08

    The present invention relates to the manufacture of thin film solid state electrochemical devices using composite cathodes comprising a redox polymer capable of undergoing oxidation and reduction, a polymer solid electrolyte and conducting carbon. The polymeric cathode material is formed as a composite of radiation crosslinked polymer electrolytes and radiation crosslinked redox polymers based on polysiloxane backbones with attached organosulfur side groups capable of forming sulfur-sulfur bonds during electrochemical oxidation.

  20. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal,

  1. Formation of thin-film resistors on silicon substrates

    DOE Patents [OSTI]

    Schnable, George L.; Wu, Chung P.

    1988-11-01

    The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

  2. Optical sensors and multisensor arrays containing thin film electroluminescent devices

    DOE Patents [OSTI]

    Aylott, Jonathan W.; Chen-Esterlit, Zoe; Friedl, Jon H.; Kopelman, Raoul; Savvateev, Vadim N.; Shinar, Joseph

    2001-12-18

    Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.

  3. Steering and Separating Excitons in Organic Thin Films and Devices |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MIT-Harvard Center for Excitonics Steering and Separating Excitons in Organic Thin Films and Devices October 26, 2010 at 3pm/36-428 Mark Thompson University of Southern California (USC) thompson abstract: We have taken a materials intensive approach to developing an understanding of the mechanism of photocurrent and photovoltage generation in organic photovoltaic devices (OPVs) and electroluminescence in organic LEDs (OLEDs). The exciton is a critical part of each of these processes, and

  4. Tin induced a-Si crystallization in thin films of Si-Sn alloys

    SciTech Connect (OSTI)

    Neimash, V. E-mail: oleks.goushcha@nuportsoft.com; Poroshin, V.; Goushcha, A. O. E-mail: oleks.goushcha@nuportsoft.com; Shepeliavyi, P.; Yukhymchuk, V.; Melnyk, V.; Kuzmich, A.; Makara, V.

    2013-12-07

    Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (24?nm in size) in the amorphous matrix of Si{sub 1?x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300?C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1?x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ?80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.

  5. Deuterium phase behavior in thin-film Pd

    SciTech Connect (OSTI)

    Munter, A.E.; Heuser, B.J.

    1998-07-01

    The absorption of deuterium from the gas phase into two Pd thin films 668 {Angstrom} and 1207 {Angstrom} thick was measured at room temperature with {ital in situ} neutron reflectometry. Room-temperature solubility isothermal curves, out-of-plane film expansion, and deuterium depth profiles were determined from fits to the neutron reflectivity data. The measurements demonstrate that the deuterium solubility behavior, both in solid solution and within the two-phase region, is strongly perturbed by the thin-film geometry, consistent with previous solubility measurements in the published literature. The phase behavior investigated here was observed to depend on film thickness and on deuterium cycling through the two-phase region. The 668-{Angstrom} film exhibited the greatest initial phase perturbation and most significant changes upon cycling. Upon repeated cycling, both films approach nearly identical deuterium isothermal solubility and out-of-plane expansion behaviors. The observed equilibrium out-of-plane expansion behavior was consistent with the films expanding under an in-plane clamping constraint imposed by the substrate. The effect of this substrate constraining force is to amplify the out-of-plane expansion beyond that expected in bulk Pd. Taken together, these measurements implicate the film/substrate interfacial clamping interaction as the origin of the perturbed hydrogen phase behavior in thin-film geometry. {copyright} {ital 1998} {ital The American Physical Society}

  6. Thin film composition with biological substance and method of making

    SciTech Connect (OSTI)

    Campbell, A.A.; Song, L.

    1999-09-28

    The invention provides a thin-film composition comprising an underlying substrate of a first material including a plurality of attachment sites; a plurality of functional groups chemically attached to the attachment sites of the underlying substrate; and a thin film of a second material deposited onto the attachment sites of the underlying substrate, and a biologically active substance deposited with the thin-film. Preferably the functional groups are attached to a self assembling monolayer attached to the underlying substrate. Preferred functional groups attached to the underlying substrate are chosen from the group consisting of carboxylates, sulfonates, phosphates, optionally substituted, linear or cyclo, alkyl, alkene, alkyne, aryl, alkylaryl, amine, hydroxyl, thiol, silyl, phosphoryl, cyano, metallocenyl, carbonyl, and polyphosphate. Preferred materials for the underlying substrate are selected from the group consisting of a metal, a metal alloy, a plastic, a polymer, a proteic film, a membrane, a glass or a ceramic. The second material is selected from the group consisting of inorganic crystalline structures, inorganic amorphous structures, organic crystalline structures, and organic amorphous structures. Preferred second materials are phosphates, especially calcium phosphates and most particularly calcium apatite. The biologically active molecule is a protein, peptide, DNA segment, RNA segment, nucleotide, polynucleotide, nucleoside, antibiotic, antimicrobial, radioisotope, chelated radioisotope, chelated metal, metal salt, anti-inflammatory, steroid, nonsteroid anti-inflammatory, analgesic, antihistamine, receptor binding agent, or chemotherapeutic agent, or other biologically active material. Preferably the biologically active molecule is an osteogenic factor consisting of the compositions listed above.

  7. Thin film composition with biological substance and method of making

    DOE Patents [OSTI]

    Campbell, Allison A.; Song, Lin

    1999-01-01

    The invention provides a thin-film composition comprising an underlying substrate of a first material including a plurality of attachment sites; a plurality of functional groups chemically attached to the attachment sites of the underlying substrate; and a thin film of a second material deposited onto the attachment sites of the underlying substrate, and a biologically active substance deposited with the thin-film. Preferably the functional groups are attached to a self assembling monolayer attached to the underlying substrate. Preferred functional groups attached to the underlying substrate are chosen from the group consisting of carboxylates, sulfonates, phosphates, optionally substituted, linear or cyclo, alkyl, alkene, alkyne, aryl, alkylaryl, amine, hydroxyl, thiol, silyl, phosphoryl, cyano, metallocenyl, carbonyl, and polyphosphate. Preferred materials for the underlying substrate are selected from the group consisting of a metal, a metal alloy, a plastic, a polymer, a proteic film, a membrane, a glass or a ceramic. The second material is selected from the group consisting of inorganic crystalline structures, inorganic amorphus structures, organic crystalline structures, and organic amorphus structures. Preferred second materials are phosphates, especially calcium phosphates and most particularly calcium apatite. The biologically active molecule is a protein, peptide, DNA segment, RNA segment, nucleotide, polynucleotide, nucleoside, antibiotic, antimicrobal, radioisotope, chelated radioisotope, chelated metal, metal salt, anti-inflamatory, steriod, nonsteriod anti-inflammatory, analgesic, antihistamine, receptor binding agent, or chemotherapeutic agent, or other biologically active material. Preferably the biologically active molecule is an osteogenic factor the compositions listed above.

  8. Geometric shape control of thin film ferroelectrics and resulting structures

    DOE Patents [OSTI]

    McKee, Rodney A.; Walker, Frederick J.

    2000-01-01

    A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

  9. MEMS-based thin-film fuel cells

    DOE Patents [OSTI]

    Jankowksi, Alan F.; Morse, Jeffrey D.

    2003-10-28

    A micro-electro-mechanical systems (MEMS) based thin-film fuel cells for electrical power applications. The MEMS-based fuel cell may be of a solid oxide type (SOFC), a solid polymer type (SPFC), or a proton exchange membrane type (PEMFC), and each fuel cell basically consists of an anode and a cathode separated by an electrolyte layer. Additionally catalyst layers can also separate the electrodes (cathode and anode) from the electrolyte. Gas manifolds are utilized to transport the fuel and oxidant to each cell and provide a path for exhaust gases. The electrical current generated from each cell is drawn away with an interconnect and support structure integrated with the gas manifold. The fuel cells utilize integrated resistive heaters for efficient heating of the materials. By combining MEMS technology with thin-film deposition technology, thin-film fuel cells having microflow channels and full-integrated circuitry can be produced that will lower the operating temperature an will yield an order of magnitude greater power density than the currently known fuel cells.

  10. Formosun Solar Corp | Open Energy Information

    Open Energy Info (EERE)

    Corp. Place: Hsinchu County, Taiwan Zip: 303-51 Sector: Solar Product: Thin-film solar cell producer based in Taiwan. References: Formosun Solar Corp.1 This article is a stub....

  11. AOS Solar Inc | Open Energy Information

    Open Energy Info (EERE)

    AOS Solar Inc Jump to: navigation, search Name: AOS Solar Inc Product: Manufacturer of thin-film silicon-on-glass. References: AOS Solar Inc1 This article is a stub. You can help...

  12. Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

    SciTech Connect (OSTI)

    Tadanaga, Kiyoharu; Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro; Duran, Alicia; Aparacio, Mario

    2014-05-01

    Highlights: LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. An aqueous solution of lithium and manganese acetates is used for the precursor solution. The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the mist CVD process, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.

  13. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  14. AxunTek Solar Energy | Open Energy Information

    Open Energy Info (EERE)

    AxunTek Solar Energy Jump to: navigation, search Name: AxunTek Solar Energy Place: Taiwan Sector: Solar Product: Taiwan-based CIGS thin film solar cell producer. References:...

  15. Back contact buffer layer for thin-film solar cells

    DOE Patents [OSTI]

    Compaan, Alvin D.; Plotnikov, Victor V.

    2014-09-09

    A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

  16. Low resistance thin film organic solar cell electrodes

    DOE Patents [OSTI]

    Forrest, Stephen (Princeton, NJ); Xue, Jiangeng (Piscataway, NJ)

    2008-01-01

    A method which lower the series resistance of photosensitive devices includes providing a transparent film of a first electrically conductive material arranged on a transparent substrate; depositing and patterning a mask over the first electrically conductive material, such that openings in the mask have sloping sides which narrow approaching the substrate; depositing a second electrically conductive material directly onto the first electrically conductive material exposed in the openings of the mask, at least partially filling the openings; stripping the mask, leaving behind reentrant structures of the second electrically conductive material which were formed by the deposits in the openings of the mask; after stripping the mask, depositing a first organic material onto the first electrically conductive material in between the reentrant structures; and directionally depositing a third electrically conductive material over the first organic material deposited in between the reentrant structures, edges of the reentrant structures aligning deposition so that the third electrically conductive material does not directly contact the first electrically conductive material, and does not directly contact the second electrically conductive material.

  17. Infrared characteristics of VO{sub 2} thin films for smart window and laser protection applications

    SciTech Connect (OSTI)

    Huang Zhangli; Chen Sihai; Lv Chaohong; Huang Ying; Lai Jianjun

    2012-11-05

    Vanadium dioxide (VO{sub 2}) films with a low semiconductor-to-metal transition temperature of 45 Degree-Sign C were fabricated through direct current magnetron sputtering followed by a post-annealing. Atomic force microscopy measurements show that the VO{sub 2} grain size is about one hundred of nanometers. Infrared (IR) characteristic is well investigated by applying a He-Ne laser power intensity measurement, and the result reveals that the VO{sub 2} film exhibits excellent IR switching property. Furthermore, solar smart window and laser protection experiments demonstrate that the obtained VO{sub 2} thin film is a promising material for the application in related fields.

  18. CIS-based thin film PV technology. Phase 1 annual technical report, September 1995--September 1996

    SciTech Connect (OSTI)

    Tarrant, D.E.; Gay, R.R.

    1997-04-01

    The primary objective of this subcontract is to establish reliable high-throughput, high-yield thin film deposition processes in order to make CIS a viable option for the next generation of photovoltaics. The primary goals for the project are to deliver a champion prototype 13% efficient large area module and to deliver sets of modules in 1-kW arrays composed of steadily increasing efficiency, reaching 1 kW of 12% efficient large-area modules by the end of the third year, demonstrating performance as well as commercial viability. The focus of the deliverables on large sets of high-performance modules reflects Siemens Solar Industries` commitment to demonstrating a reliable low-cost product. This document reports on progress from September 1995 through September 1996.

  19. Imaging electronic trap states in perovskite thin films with combined fluorescence and femtosecond transient absorption microscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xiao, Kai; Ma, Ying -Zhong; Simpson, Mary Jane; Doughty, Benjamin; Yang, Bin

    2016-04-22

    Charge carrier trapping degrades the performance of organometallic halide perovskite solar cells. To characterize the locations of electronic trap states in a heterogeneous photoactive layer, a spatially resolved approach is essential. Here, we report a comparative study on methylammonium lead tri-iodide perovskite thin films subject to different thermal annealing times using a combined photoluminescence (PL) and femtosecond transient absorption microscopy (TAM) approach to spatially map trap states. This approach coregisters the initially populated electronic excited states with the regions that recombine radiatively. Although the TAM images are relatively homogeneous for both samples, the corresponding PL images are highly structured. Themore » remarkable variation in the PL intensities as compared to transient absorption signal amplitude suggests spatially dependent PL quantum efficiency, indicative of trapping events. Furthermore, detailed analysis enables identification of two trapping regimes: a densely packed trapping region and a sparse trapping area that appear as unique spatial features in scaled PL maps.« less

  20. Building a Better Capacitor with Thin-Film Atomic Layer Deposition Processing

    SciTech Connect (OSTI)

    Pike, Christopher

    2015-08-28

    The goal of this research is to determine procedures for creating ultra-high capacity supercapacitors by using nanofabrication techniques and high k-value dielectrics. One way to potentially solve the problem of climate change is to switch the source of energy to a source that doesn’t release many tons of greenhouse gases, gases which cause global warming, into the Earth’s atmosphere. These trap in more heat from the Sun’s solar energy and cause global temperatures to rise. Atomic layer deposition will be used to create a uniform thin-film of dielectric to greatly enhance the abilities of our capacitors and will build them on the nanoscale.

  1. Structural and photovoltaic properties of a-Si (SNc)/c-Si heterojunction fabricated by EBPVD technique

    SciTech Connect (OSTI)

    Demiro?lu, D.; Kazmanli, K.; Urgen, M.; Tatar, B.

    2013-12-16

    In last two decades sculptured thin films are very attractive for researches. Some properties of these thin films, like high porosity correspondingly high large surface area, controlled morphology; bring into prominence on them. Sculptured thin films have wide application areas as electronics, optics, mechanics, magnetic and chemistry. Slanted nano-columnar (SnC) thin films are a type of sculptured thin films. In this investigation SnC thin films were growth on n-type crystalline Si(100) and p-type crystalline Si(111) via ultra-high vacuum electron beam evaporation technique. The structural and morphological properties of the amorphous silicon thin films were investigated by XRD, Raman and FE-SEM analysis. According to the XRD and Raman analysis the structure of thin film was amorphous and FE-SEM analysis indicated slanted nano-columns were formed smoothly. Slanted nano-columns a-Si/c-Si heterojunction were prepared as using a photovoltaic device. In this regard we were researched photovoltaic properties of these heterojunction with current-voltage characterization under dark and illumination conditions. Electrical parameters were determined from the current-voltage characteristic in the dark conditions zero-bias barrier height ?{sub B0}?=?0.83?1.00eV; diode ideality factor ??=?11.71?10.73; series resistance R{sub s}?=?260?31.1 k? and shunt resistance R{sub sh}?=?25.71?63.5 M? SnC a-Si/n-Si and SnC a-Si/p-Si heterojunctions shows a pretty good photovoltaic behavior about 10{sup 3}- 10{sup 4} times. The obtained photovoltaic parameters are such as short circuit current density J{sub sc} 83-40 mA/m{sup 2}, open circuit voltage V{sub oc} 900-831 mV.

  2. Solar collector

    DOE Patents [OSTI]

    Wilhelm, W.G.

    The invention pertains to a flat plate collector that employs high performance thin films. The solar collector of this invention overcomes several problems in this field, such as excessive hardware, cost and reliability, and other prior art drawbacks outlined in the specification. In the preferred form, the apparatus features a substantially rigid planar frame. A thin film window is bonded to one planar side of the frame. An absorber of laminate construction is comprised of two thin film layers that are sealed perimetrically. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. Absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  3. Deployable telescope having a thin-film mirror and metering structure

    DOE Patents [OSTI]

    Krumel, Leslie J.; Martin, Jeffrey W.

    2010-08-24

    A deployable thin-film mirror telescope comprises a base structure and a metering structure. The base structure houses a thin-film mirror, which can be rolled for stowage and unrolled for deployment. The metering structure is coupled to the base structure and can be folded for stowage and unfolded for deployment. In the deployed state, the unrolled thin-film mirror forms a primary minor for the telescope and the unfolded metering structure positions a secondary minor for the telescope.

  4. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, J.J. III; Halpern, B.L.

    1993-10-26

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

  5. Phase-Controlled Electrochemical Activity of Epitaxial Spinel Thin films as

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mg-Cathodes - Joint Center for Energy Storage Research 7, 2015, Research Highlights Phase-Controlled Electrochemical Activity of Epitaxial Spinel Thin films as Mg-Cathodes Using epitaxial thin film methods, two polymorphs of MgMn2O4 (MMO) are stabilized in tetragonal (MMOT) and cubic (MMOC) phases. The MMOT thin film shows negligible activity with no structural changes, while MMOC (normally found at high temperature or high pressure) exhibits reversible Mg2+ activity with associated changes

  6. Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

    SciTech Connect (OSTI)

    Wang, Quan; Zhang, Yanmin; Hu, Ran; Ren, Naifei; Ge, Daohan

    2013-11-14

    Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructure after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.

  7. Thin-Film Fiber Optic Sensors for Power Control and Fault Detection. Final Report

    SciTech Connect (OSTI)

    Duncan, Paul Grems

    2003-09-30

    Described is the development of an optical current measurement device, an active power conditioning system, and sol gel type thin films for the detection of magnetic fields.

  8. Electrochromism vs. the Bugs:DevelopingWO3 Thin Film Windows...

    Office of Scientific and Technical Information (OSTI)

    Title: Electrochromism vs. the Bugs:DevelopingWO3 Thin Film Windows toControl Photoactive Biological Systems. Abstract not provided. Authors: Small, Leo J ; Spoerke, Erik David ; ...

  9. Investigation of the optical properties of MoS{sub 2} thin films...

    Office of Scientific and Technical Information (OSTI)

    ellipsometry Spectroscopic ellipsometry (SE) characterization of layered transition metal dichalcogenide (TMD) thin films grown by vapor phase sulfurization is reported. By...

  10. Photoelectrochemical etching of epitaxial InGaN thin films: Self...

    Office of Scientific and Technical Information (OSTI)

    lasers with linewidth less than 1 nm. In the initial stages of PEC etching, when the thin film is flat, characteristic voltammogram shapes are observed. At low...

  11. Thin-film lithium batteries highlighted at OSTI | OSTI, US Dept...

    Office of Scientific and Technical Information (OSTI)

    The Department of Energy's Oak Ridge National Laboratory (ORNL) has developed just such a high-performance thin-film lithium battery for a variety of technological applications. ...

  12. Effects of aging on the characteristics of TiNiPd shape memory alloy thin films

    SciTech Connect (OSTI)

    Zhang Congchun

    2008-07-15

    TiNiPd thin films have been deposited on glass substrate using R.F. magnetron sputtering. Effects of annealing and aging on the microstructure, phase transformation behaviors and shape memory effects of these thin films have been studied by X-ray diffractometry, differential scanning calorimeter, tensile tests and internal friction characteristics. The TiNiPd thin films annealed at 750 deg. C exhibit uniform martensite/austenite transformations and shape memory effect. Aging at 450 deg. C for 1 h improved the uniformity of transformations and shape memory effect. Long time aging decreased transformation temperatures and increased the brittleness of TiNiPd thin films.

  13. Nonlinear optical characterization of ZnS thin film synthesized by chemical spray pyrolysis method

    SciTech Connect (OSTI)

    G, Sreeja V; Anila, E. I. R, Reshmi John, Manu Punnan; V, Sabitha P; Radhakrishnan, P.

    2014-10-15

    ZnS thin film was prepared by Chemical Spray Pyrolysis (CSP) method. The sample was characterized by X-ray diffraction method and Z scan technique. XRD pattern showed that ZnS thin film has hexagonal structure with an average size of about 5.6nm. The nonlinear optical properties of ZnS thin film was studied by open aperture Z-Scan technique using Q-switched Nd-Yag Laser at 532nm. The Z-scan plot showed that the investigated ZnS thin film has saturable absorption behavior. The nonlinear absorption coefficient and saturation intensity were also estimated.

  14. Thin film superconductors and process for making same

    DOE Patents [OSTI]

    Nigrey, P.J.

    1988-01-21

    A process for the preparation of oxide superconductors from high-viscosity non-aqueous solution is described. Solutions of lanthanide nitrates, alkaline earth nitrates and copper nitrates in a 1:2:3 stoichiometric ratio, when added to ethylene glycol containing citric acid solutions, have been used to prepare highly viscous non-aqueous solutions of metal mixed nitrates-citrates. Thin films of these compositions are produced when a layer of the viscous solution is formed on a substrate and subjected to thermal decomposition.

  15. Laser-induced metallic nanograined thin films processing

    SciTech Connect (OSTI)

    Tosa, Nicoleta E-mail: florin.toadere@itim-cj.ro; Toadere, Florin E-mail: florin.toadere@itim-cj.ro; Hojbota, Calin E-mail: florin.toadere@itim-cj.ro; Tosa, Valer E-mail: florin.toadere@itim-cj.ro

    2013-11-13

    A direct laser writing method for designing metallic nanograined thin films is presented. This method takes advantage of photon conversion within a chemical process localized at the focal point. A computer controlled positioning system allows the control of experimental parameters and spatial resolution of the pattern. Spectroscopic investigations reveal variable attenuation of the optical properties in UV-visible range and a spectral imaging processing algorithm simulated the functionality of these films in visible light. This could be an important step for obtaining neutral density attenuators.

  16. Nucleation of fcc Ta when heating thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Janish, Matthew T.; Mook, William M.; Carter, C. Barry

    2014-10-25

    Thin tantalum films have been studied during in-situ heating in a transmission electron microscope. Diffraction patterns from the as-deposited films were typical of amorphous materials. Crystalline grains were observed to form when the specimen was annealed in-situ at 450°C. Particular attention was addressed to the formation and growth of grains with the face-centered cubic (fcc) crystal structure. As a result, these observations are discussed in relation to prior work on the formation of fcc Ta by deformation and during thin film deposition.

  17. Method for fabricating thin films of pyrolytic carbon

    DOE Patents [OSTI]

    Brassell, Gilbert W.; Lewis, Jr., John; Weber, Gary W.

    1982-01-01

    The present invention relates to a method for fabricating ultra-thin films of pyrolytic carbon. Pyrolytic carbon is vapor deposited onto a concave surface of a heated substrate to a total uniform thickness in the range of about 0.1 to 1.0 micrometer. The carbon film on the substrate is provided with a layer of adherent polymeric resin. The resulting composite film of pyrolytic carbon and polymeric resin is then easily separated from the substrate by shrinking the polymeric resin coating with thermally induced forces.

  18. Durable silver thin film coating for diffraction gratings

    DOE Patents [OSTI]

    Wolfe, Jesse D.; Britten, Jerald A.; Komashko, Aleksey M.

    2006-05-30

    A durable silver film thin film coated non-planar optical element has been developed to replace Gold as a material for fabricating such devices. Such a coating and resultant optical element has an increased efficiency and is resistant to tarnishing, can be easily stripped and re-deposited without modifying underlying grating structure, improves the throughput and power loading of short pulse compressor designs for ultra-fast laser systems, and can be utilized in variety of optical and spectrophotometric systems, particularly high-end spectrometers that require maximized efficiency.

  19. High-temperature superconducting thin-film-based electronic devices

    SciTech Connect (OSTI)

    Wu, X.D; Finokoglu, A.; Hawley, M.; Jia, Q.; Mitchell, T.; Mueller, F.; Reagor, D.; Tesmer, J.

    1996-09-01

    This the final report of a one-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project involved optimization of processing of Y123 and Tl-2212 thin films deposited on novel substrates for advanced electronic devices. The Y123 films are the basis for development of Josephson Junctions to be utilized in magnetic sensors. Microwave cavities based on the Tl-2212 films are the basis for subsequent applications as communication antennas and transmitters in satellites.

  20. Oriented niobate ferroelectric thin films for electrical and optical devices

    DOE Patents [OSTI]

    Wessels, Bruce W.; Nystrom, Michael J.

    2001-01-01

    Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or cyrstalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

  1. Techniques for producing free-standing thin films on frames

    SciTech Connect (OSTI)

    Aubert, J.H.; McNamara, W.F.

    1993-09-01

    The procedures of vapor-deposition polymerization, spin coating and orientation-dependent etching have been employed to make free-standing thin films of Parylene-N, Parylene-D, polystyrene, polycarbonate and perfluoro-dimethyl-dioxole/tetrafluoroethylene copolymer (Teflon{reg_sign} AF-1600). The polymeric materials were vapor-deposited or spin-coated onto substrates of polished single-crystal silicon (wafers) and removed on frames of various shapes and sizes after application of adhesive and an etching process using potassium hydroxide. Thicknesses range from 2000{Angstrom} to 12000{Angstrom}.

  2. Nanoscale imaging of photocurrent and efficiency in CdTe solar...

    Office of Scientific and Technical Information (OSTI)

    cells The local collection characteristics of grain interiors and grain boundaries in thin film CdTe polycrystalline solar cells are investigated using scanning photocurrent...

  3. NREL and Stanford Team up on Peel-and-Stick Solar Cells - News...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A scientific paper, "Peel and Stick: Fabricating Thin Film Solar Cells on Universal Substrates," appears in the online version of Scientific Reports, a subsidiary of the British ...

  4. NREL and SkyFuel Partnership Reflects Bright Future for Solar...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Randy Gee talk about their partnership to develop a thin film to substitute for bulkier glass mirrors on solar-collecting parabolic troughs. Learn more about NREL's ...

  5. Double Power Output for GaAs Solar Cells Embedded in Luminescent...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Double power output of bifacial thin-film GaAs microscale solar cells is achieved by embedding in luminescent waveguides (LSCs) with light- trapping backside reflectors (BSRs). ...

  6. Sputter deposition for multi-component thin films

    DOE Patents [OSTI]

    Krauss, A.R.; Auciello, O.

    1990-05-08

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

  7. Thiogallate Blue Phosphors for Thin Film Electroluminescent Flat Panel Displays

    SciTech Connect (OSTI)

    Dye, Robert C.; Tuenge, Richard T.

    1997-04-03

    This project helped to develop a metal-organic chemical vapor deposition (MOCVD) method that could improve the efficiency of the blue phosphor for full color thin-film electroluminescent (TFEL) flat panel displays. High quality SrS and SrS:Ce thin films were deposited from Sr(thd)2, Ce(thd)4 and H2S via a low pressure MOCVD process. Film characteristics were found to be insensitive to the presence of the cerium dopant in the concn. range investigated. Depositions were carried out for a wide temp. range (250-550°C). Deposition rates were found to be relatively insensitive for the temp. range investigated. The films produced were found to be highly cryst. at all temps. investigated. Deposited material showed texturing as a function of substrate material and temp. FWHM of the a 111 ii reflections were found to have a 2Q values of 0.15-0.18 deg. for all temps. RBS and AES shows stoichiometric 1 : 1 SrS with less than 2% carbon and oxygen contaminates. ERO indicates the films to have 1- 2.5% hydrogen. Films doped with 0.019-0.043 atom % Ce showed weak blue-green to green PL with increasing dopant concn. Doped films yielded up to 3.2 cd/m2 EL emission with CIE coordinates of x = 0.22 and y = 0.32 and turn-on voltages of 150-250 V.

  8. Sputter deposition for multi-component thin films

    DOE Patents [OSTI]

    Krauss, Alan R.; Auciello, Orlando

    1990-01-01

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

  9. Soldering of Thin Film-Metallized Glass Substrates

    SciTech Connect (OSTI)

    Hosking, F.M.; Hernandez, C.L.; Glass, S.J.

    1999-03-31

    The ability to produce reliable electrical and structural interconnections between glass and metals by soldering was investigated. Soldering generally requires premetallization of the glass. As a solderable surface finish over soda-lime-silicate glass, two thin films coatings, Cr-Pd-Au and NiCr-Sn, were evaluated. Solder nettability and joint strengths were determined. Test samples were processed with Sn60-Pb40 solder alloy at a reflow temperature of 210 C. Glass-to-cold rolled steel single lap samples yielded an average shear strength of 12 MPa. Solder fill was good. Control of the Au thickness was critical in minimizing the formation of AuSn{sub 4} intermetallic in the joint, with a resulting joint shear strength of 15 MPa. Similar glass-to-glass specimens with the Cr-Pd-Au finish failed at 16.5 MPa. The NiCr-Sn thin film gave even higher shear strengths of 20-22.5 MPa, with failures primarily in the glass.

  10. Evidence of significant down-conversion in a Si-based solar cell using CuInS{sub 2}/ZnS core shell quantum dots

    SciTech Connect (OSTI)

    Gardelis, Spiros Nassiopoulou, Androula G.

    2014-05-05

    We report on the increase of up to 37.5% in conversion efficiency of a Si-based solar cell after deposition of light-emitting Cd-free, CuInS{sub 2}/ZnS core shell quantum dots on the active area of the cell due to the combined effect of down-conversion and the anti- reflecting property of the dots. We clearly distinguished the effect of down-conversion from anti-reflection and estimated an enhancement of up to 10.5% in the conversion efficiency due to down-conversion.

  11. Fully Integrated Applications of Thin Films on Low Temperature Cofired Ceramic (LTCC)

    SciTech Connect (OSTI)

    Ambrose Wolf; Ken Peterson; Matt O'Keefe; Wayne Huebner; Bill Kuhn

    2012-04-19

    Thin film multilayers have previously been introduced on multilayer low temperature cofired ceramic (LTCC), as well as initial thin film capacitors on LTCC. The ruggedness of a multipurpose Ti-Cu-Pt-Au stack for connectivity and RF conductivity has continued to benefit fabrication and reliability in state of-the-art modules, while the capacitors have followed the traditional Metal-Insulator-Metal (MIM) style. The full integration of thin film passives with thin film connectivity traces is presented. Certain passives, such as capacitors, require specifically tailored and separately patterned thin film (multi-)layers, including a dielectric. Different capacitance values are achieved by variation of both the insulator layer thickness and the active area of the capacitor. Other passives, such as filters, require only the conductor - a single thin film multilayer. This can be patterned from the same connectivity thin film material (Ti-Cu-Pt-Au), or a specially tailored thin film material (e.g. Ti-Cu-Au) can be deposited. Both versions are described, including process and integration details. Examples are discussed, ranging from patterning for maximum tolerances, to space and performance-optimized designs. Cross-sectional issues associated with integration are also highlighted in the discussion.

  12. Conductive polymer/fullerene blend thin films with honeycomb framework for transparent photovoltaic application

    DOE Patents [OSTI]

    Cotlet, Mircea; Wang, Hsing-Lin; Tsai, Hsinhan; Xu, Zhihua

    2015-04-21

    Optoelectronic devices and thin-film semiconductor compositions and methods for making same are disclosed. The methods provide for the synthesis of the disclosed composition. The thin-film semiconductor compositions disclosed herein have a unique configuration that exhibits efficient photo-induced charge transfer and high transparency to visible light.

  13. Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices

    DOE Patents [OSTI]

    Nastasi, Michael Anthony; Wang, Yongqiang; Fraboni, Beatrice; Cosseddu, Piero; Bonfiglio, Annalisa

    2013-06-11

    Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

  14. Sunner Solar Corp | Open Energy Information

    Open Energy Info (EERE)

    Name: Sunner Solar Corp. Place: Taoyuan, Taiwan Product: A Taiwan-based thin-film PV cell manufacturer References: Sunner Solar Corp.1 This article is a stub. You can help...

  15. Kaneka Solar Tech Inc | Open Energy Information

    Open Energy Info (EERE)

    Solar Tech Inc Jump to: navigation, search Name: Kaneka Solar-Tech Inc Place: Osaka, Japan Zip: 530-8288 Product: Manufactures thin-film amorphous silicon PV cells and modules....

  16. T Solar Global SA | Open Energy Information

    Open Energy Info (EERE)

    Solar Global SA Jump to: navigation, search Name: T-Solar Global SA Place: Madrid, Spain Zip: 28042 Product: Spain-based thin-film silicon PV cell and module maker, using Applied...

  17. Solar Plus SA | Open Energy Information

    Open Energy Info (EERE)

    Plus SA Jump to: navigation, search Name: Solar Plus SA Place: Lisbon, Portugal Sector: Solar Product: Plans to set up a 5.5MWyear thin-film silicon module factory in Aveiro,...

  18. Optimization of Phase-Engineered a-Si:H-Based Multi-Junction Solar Cells: Final Technical Report, October 2001-July 2005

    SciTech Connect (OSTI)

    Wronski, C. R.; Collins, R. W.; Podraza, N. J.; Vlahos, V.; Pearce, J. M.; Deng, J.; Albert, M.; Ferreira, G. M.; Chen, C.

    2006-08-01

    The scope of the work under this subcontract has involved investigating engineered improvements in the performance and stability of solar cells in a systematic way, which included the following four tasks: (1) Materials research and device development; (2) Process improvement directed by real time diagnostics; (3) Device loss mechanisms; and (4) Characterization strategies for advanced materials Our work has resulted in new and important insights into the deposition of a-Si:H-based materials, as well as into the nature of the Staebler-Wronski Effect (SWE). Presumably, many of these insights will be used by industrial partners to develop more systematic approaches in optimizing solar cells for higher performance and stability. This effort also cleared up several serious misconceptions about the nature of the p-layer in cells and the SWE in materials and cells. Finally, the subcontract identified future directions that should be pursued for greater understanding and improvement.

  19. Transparent conducting Si-codoped Al-doped ZnO thin films prepared by magnetron sputtering using Al-doped ZnO powder targets containing SiC

    SciTech Connect (OSTI)

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu

    2009-07-15

    Transparent conducting Al-doped ZnO (AZO) thin films codoped with Si, or Si-codoped AZO (AZO:Si), were prepared by radio-frequency magnetron sputtering using a powder mixture of ZnO, Al{sub 2}O{sub 3}, and SiC as the target; the Si content (Si/[Si+Zn] atomic ratio) was varied from 0 to 1 at. %, but the Al content (Al/[Al+Zn] atomic ratio) was held constant. To investigate the effect of carbon on the electrical properties of AZO:Si thin films prepared using the powder targets containing SiC, the authors also prepared thin films using a mixture of ZnO, Al{sub 2}O{sub 3}, and SiO{sub 2} or SiO powders as the target. They found that when AZO:Si thin films were deposited on glass substrates at about 200 degree sign C, both Al and Si doped into ZnO acted as effective donors and the atomic carbon originating from the sputtered target acted as a reducing agent. As a result, sufficient improvement was obtained in the spatial distribution of resistivity on the substrate surface in AZO:Si thin films prepared with a Si content (Si/[Si+Zn] atomic ratio) of 0.75 at. % using powder targets containing SiC. The improvement in resistivity distribution was mainly attributed to increases in both carrier concentration and Hall mobility at locations on the substrate corresponding to the target erosion region. In addition, the resistivity stability of AZO: Si thin films exposed to air for 30 min at a high temperature was found to improve with increasing Si content.

  20. Fabrication of ionic liquid electrodeposited Cu--Sn--Zn--S--Se thin films and method of making

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath

    2016-01-12

    A semiconductor thin-film and method for producing a semiconductor thin-films comprising a metallic salt, an ionic compound in a non-aqueous solution mixed with a solvent and processing the stacked layer in chalcogen that results in a CZTS/CZTSS thin films that may be deposited on a substrate is disclosed.

  1. The electron beam hole drilling of silicon nitride thin films

    SciTech Connect (OSTI)

    Howitt, D. G.; Chen, S. J.; Gierhart, B. C.; Smith, R. L.; Collins, S. D.

    2008-01-15

    The mechanism by which an intense electron beam can produce holes in thin films of silicon nitride has been investigated using a combination of in situ electron energy loss spectrometry and electron microscopy imaging. A brief review of electron beam interactions that lead to material loss in different materials is also presented. The loss of nitrogen and silicon decreases with decreasing beam energy and although still observable at a beam energy of 150 keV ceases completely at 120 keV. The linear behavior of the loss rate coupled with the energy dependency indicates that the process is primarily one of direct displacement, involving the sputtering of atoms from the back surface of the specimen with the rate controlling mechanism being the loss of nitrogen.

  2. Origin of superstructures in (double) perovskite thin films

    SciTech Connect (OSTI)

    Shabadi, V. Major, M.; Komissinskiy, P.; Vafaee, M.; Radetinac, A.; Baghaie Yazdi, M.; Donner, W.; Alff, L.

    2014-09-21

    We have investigated the origin of superstructure peaks as observed by X-ray diffraction of multiferroic Bi(Fe{sub 0.5}Cr{sub 0.5})O{sub 3} thin films grown by pulsed laser deposition on single crystal SrTiO{sub 3} substrates. The photon energy dependence of the contrast between the atomic scattering factors of Fe and Cr is used to rule out a chemically ordered double perovskite Bi{sub 2}FeCrO{sub 6} (BFCO). Structural calculations suggest that the experimentally observed superstructure occurs due to unequal cation displacements along the pseudo-cubic [111] direction that mimic the unit cell of the chemically ordered compound. This result helps to clarify discrepancies in the correlations of structural and magnetic order reported for Bi{sub 2}FeCrO{sub 6}. The observation of a superstructure in itself is not a sufficient proof of chemical order in double perovskites.

  3. Method for making thick and/or thin film

    DOE Patents [OSTI]

    Pham, Ai Quoc; Glass, Robert S.

    2004-11-02

    A method to make thick or thin films a very low cost. The method is generally similar to the conventional tape casting techniques while being more flexible and versatile. The invention involves preparing a slip (solution) of desired material and including solvents such as ethanol and an appropriate dispersant to prevent agglomeration. The slip is then sprayed on a substrate to be coated using an atomizer which spreads the slip in a fine mist. Upon hitting the substrate, the solvent evaporates, leaving a green tape containing the powder and other additives, whereafter the tape may be punctured, cut, and heated for the desired application. The tape thickness can vary from about 1 .mu.m upward.

  4. Long-laser-pulse method of producing thin films

    DOE Patents [OSTI]

    Balooch, Mehdi; Olander, Donald K.; Russo, Richard E.

    1991-01-01

    A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agen The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.

  5. Electrical contacts for a thin-film semiconductor device

    DOE Patents [OSTI]

    Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

    1989-08-08

    A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

  6. MultiLayer solid electrolyte for lithium thin film batteries

    DOE Patents [OSTI]

    Lee, Se -Hee; Tracy, C. Edwin; Pitts, John Roland; Liu, Ping

    2015-07-28

    A lithium metal thin-film battery composite structure is provided that includes a combination of a thin, stable, solid electrolyte layer [18] such as Lipon, designed in use to be in contact with a lithium metal anode layer; and a rapid-deposit solid electrolyte layer [16] such as LiAlF.sub.4 in contact with the thin, stable, solid electrolyte layer [18]. Batteries made up of or containing these structures are more efficient to produce than other lithium metal batteries that use only a single solid electrolyte. They are also more resistant to stress and strain than batteries made using layers of only the stable, solid electrolyte materials. Furthermore, lithium anode batteries as disclosed herein are useful as rechargeable batteries.

  7. Studies on nickel-tungsten oxide thin films

    SciTech Connect (OSTI)

    Usha, K. S.; Sivakumar, R.; Sanjeeviraja, C.

    2014-10-15

    Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm{sup −1} and 1100 cm{sup −1} correspond to Ni-O vibration and the peak at 860 cm{sup −1} can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created due to the addition of tungsten, respectively.

  8. Quantum states of neutrons in magnetic thin films

    SciTech Connect (OSTI)

    Radu, F.; Zabel, H.; Leiner, V.; Wolff, M.; Ignatovich, V.K.

    2005-06-01

    We have studied experimentally and theoretically the interaction of polarized neutrons with magnetic thin films and magnetic multilayers. In particular, we have analyzed the behavior of the critical edges for total external reflection in both cases. For a single film we have observed experimentally and theoretically a simple behavior: the critical edges remain fixed and the intensity varies according to the angle between the polarization axis and the magnetization vector inside the film. For the multilayer case we find that the critical edges for spin-up and spin-down polarized neutrons move toward each other as a function of the angle between the magnetization vectors in adjacent ferromagnetic films. Although the results for multilayers and single thick layers appear to be different, in fact, the same spinor method explains both results. An interpretation of the critical edges behavior for the multilyers as a superposition of ferromagnetic and antifferomagnetic states is given.

  9. Surfaces and thin films studied by picosecond ultrasonics

    SciTech Connect (OSTI)

    Maris, J.H.; Tauc, J.

    1992-05-01

    This research is the study of thin films and interfaces via the use of the picosecond ultrasonic technique. In these experiments ultrasonic waves are excited in a structure by means of a picosecond light pulse ( pump pulse''). The propagation of these waves is detected through the use of a probe light pulse that is time-delayed relative to the pump. This probe pulse measures the change {Delta}R(t) in the optical reflectivity of the structure that occurs because the ultrasonic wave changes the optical properties of the structure. This technique make possible the study of the attenuation and velocity of ultrasonic waves up to much higher frequencies than was previously possible (up to least 500 GHz). In addition, the excellent time-resolution of the method makes it possible to study nanostructures of linear dimensions down to 100 {Angstrom} or less by ultrasonic pulse-echo techniques. 25 refs.

  10. Room-temperature magnetoelectric multiferroic thin films and applications thereof

    DOE Patents [OSTI]

    Katiyar, Ram S; Kuman, Ashok; Scott, James F.

    2014-08-12

    The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.

  11. Equiatomic CoPt thin films with extremely high coercivity

    SciTech Connect (OSTI)

    Varghese, Binni; Piramanayagam, S. N. Yang, Yi; Kai Wong, Seng; Khume Tan, Hang; Kiat Lee, Wee; Okamoto, Iwao

    2014-05-07

    In this paper, magnetic and structural properties of near-equiatomic CoPt thin films, which exhibited a high coercivity in the film-normal directionsuitable for perpendicular magnetic recording media applicationsare reported. The films exhibited a larger coercivity of about 6.5 kOe at 8?nm. The coercivity showed a monotonous decrease as the film thickness was increased. The transmission electron microscopy images indicated that the as fabricated CoPt film generally consists of a stack of magnetically hard hexagonal-close-packed phase, followed by stacking faults and face-centred-cubic phase. The thickness dependent magnetic properties are explained on the basis of exchange-coupled composite media. Epitaxial growth on Ru layers is a possible factor leading to the unusual observation of magnetically hard hcp-phase at high concentrations of Pt.

  12. Manipulating Josephson junctions in thin-films by nearby vortices

    SciTech Connect (OSTI)

    Kogan, V G; Mints, R G

    2014-07-01

    It is shown that a vortex trapped in one of the banks of a planar edge-type Josephson junction in a narrow thin-film superconducting strip can change drastically the dependence of the junction critical current on the applied field, I-c(H). When the vortex is placed at certain discrete positions in the strip middle, the pattern I-c(H) has zero at H = 0 instead of the traditional maximum of '0-type' junctions. The number of these positions is equal to the number of vortices trapped at the same location. When the junction-vortex separation exceeds similar to W, the strip width, I-c(H) is no longer sensitive to the vortex presence. The same is true for any separation if the vortex approaches the strip edges. (C) 2014 Elsevier B.V. All rights reserved.

  13. Electrodeposition of Zn based nanostructure thin films for photovoltaic applications

    SciTech Connect (OSTI)

    Al-Bathi, S. A. M.

    2015-03-30

    We present here a systematic study on the synthesis thin films of various ZnO, CdO, Zn{sub x}Cd{sub 1-x} (O) and ZnTe nanostructures by electrodeposition technique with ZnCl{sub 2,} CdCl{sub 2} and ZnSO{sub 4} solution as starting reactant. Several reaction parameters were examined to develop an optimal procedure for controlling the size, shape, and surface morphology of the nanostructure. The results showed that the morphology of the products can be carefully controlled through adjusting the concentration of the electrolyte. The products present well shaped Nanorods arrays at specific concentration and temperature. UV-VIS spectroscopy and X-ray diffraction results show that the product presents good crystallinity. A possible formation process has been proposed.

  14. Optical limiting effects in nanostructured silicon carbide thin films

    SciTech Connect (OSTI)

    Borshch, A A; Starkov, V N; Volkov, V I; Rudenko, V I; Boyarchuk, A Yu; Semenov, A V

    2013-12-31

    We present the results of experiments on the interaction of nanosecond laser radiation at 532 and 1064 nm with nanostructured silicon carbide thin films of different polytypes. We have found the effect of optical intensity limiting at both wavelengths. The intensity of optical limiting at ? = 532 nm (I{sub cl} ? 10{sup 6} W cm{sup -2}) is shown to be an order of magnitude less than that at ? = 1064 nm (I{sub cl} ? 10{sup 7} W cm{sup -2}). We discuss the nature of the nonlinearity, leading to the optical limiting effect. We have proposed a method for determining the amount of linear and two-photon absorption in material media. (nonlinear optical phenomena)

  15. Compositional analysis and depth profiling of thin film CrO{sub 2} by heavy ion ERDA and standard RBS: a comparison

    SciTech Connect (OSTI)

    Khamlich, S.; Msimanga, M.; Pineda-Vargas, C.A.; Nuru, Z.Y.; McCrindle, R.; Maaza, M.

    2012-08-15

    Chromium dioxide (CrO{sub 2}) thin film has generated considerable interest in applied research due to the wide variety of its technological applications. It has been extensively investigated in recent years, attracting the attention of researchers working on spintronic heterostructures and in the magnetic recording industry. However, its synthesis is usually a difficult task due to its metastable nature and various synthesis techniques are being investigated. In this work a polycrystalline thin film of CrO{sub 2} was prepared by electron beam vaporization of Cr{sub 2}O{sub 3} onto a Si substrate. The polycrystalline structure was confirmed through XRD analysis. The stoichiometry and elemental depth distribution of the deposited film were measured by ion beam nuclear analytical techniques heavy ion elastic recoil detection analysis (ERDA) and Rutherford backscattering spectrometry (RBS), which both have relative advantage over non-nuclear spectrometries in that they can readily provide quantitative information about the concentration and distribution of different atomic species in a layer. Moreover, the analysis carried out highlights the importance of complementary usage of the two techniques to obtain a more complete description of elemental content and depth distribution in thin films. - Graphical abstract: Heavy ion elastic recoil detection analysis (ERDA) and Rutherford backscattering spectrometry (RBS) both have relative advantage over non-nuclear spectrometries in that they can readily provide quantitative information about the concentration and distribution of different atomic species in a layer. Highlights: Black-Right-Pointing-Pointer Thin films of CrO{sub 2} have been grown by e-beam evaporation of Cr{sub 2}O{sub 3} target in vacuum. Black-Right-Pointing-Pointer The composition was determined by heavy ion-ERDA and RBS. Black-Right-Pointing-Pointer HI-ERDA and RBS provided information on the light and heavy elements, respectively.

  16. Individual identification of free hole and electron dynamics in CuIn{sub 1?x}Ga{sub x}Se{sub 2} thin films by simultaneous monitoring of two optical transitions

    SciTech Connect (OSTI)

    Okano, Makoto; Hagiya, Hideki; Sakurai, Takeaki; Akimoto, Katsuhiro; Shibata, Hajime; Niki, Shigeru; Kanemitsu, Yoshihiko

    2015-05-04

    The photocarrier dynamics of CuIn{sub 1?x}Ga{sub x}Se{sub 2} (CIGS) thin films were studied using white-light transient absorption (TA) measurements, as an understanding of this behavior is essential for improving the performance of solar cells composed of CIGS thin films. A characteristic double-peak structure due to the splitting of the valence bands in the CIGS was observed in the TA spectra under near-band-gap resonant excitation. From a comparison of the TA decay dynamics monitored at these two peaks, it was found that the slow-decay components of the electron and hole relaxation are on the nanosecond timescale. This finding is clear evidence of the long lifetimes of free photocarriers in polycrystalline CIGS thin films.

  17. Structural characterization and novel optical properties of defect chalcopyrite ZnGa{sub 2}Te{sub 4} thin films

    SciTech Connect (OSTI)

    Fouad, S.S.; Sakr, G.B.; Yahia, I.S.; Basset, D.M. Abdel

    2011-11-15

    Highlights: {yields} Preparation and characterization of ZnGa{sub 2}Te{sub 4} in powder and thin film forms. {yields} Structure properties such as XRD and EDX. {yields} Optical constant of the as-deposited ZnGa{sub 2}Te{sub 4} for the first time. {yields} Extraction of the optical parameters of the studied films. -- Abstract: Stoichiometric thin film samples of the ternary ZnGa{sub 2}Te{sub 4} defect chalcopyrite compound were prepared and characterized by X-ray diffraction technique. The elemental chemical composition of the prepared bulk material as well as of the as-deposited film was determined by energy-dispersive X-ray spectrometry. ZnGa{sub 2}Te{sub 4} thin films were deposited, by conventional thermal evaporation technique onto highly cleaned glass substrates. The X-ray and electron diffraction studies revealed that the as-deposited and the annealed ZnGa{sub 2}Te{sub 4} films at annealing temperature t{sub a} {<=} 548 K are amorphous, while those annealed at t{sub a} {>=} 573 K (for 1 h), are polycrystalline. The optical properties of the as-deposited films have been investigated for the first time at normal incidence in the spectral range from 500 to 2500 nm. The refractive index dispersion in the transmission and low absorption region is adequately described by the Wemple-DiDomenico single oscillator model, whereby, the values of the oscillator parameters have been calculated. The analysis of the optical absorption coefficient revealed an in-direct optical transition with energy of 1.33 eV for the as-deposited sample. This work suggested that ZnGa{sub 2}Te{sub 4} is a good candidate in solar cell devices as an absorbing layer.

  18. Gadir Solar | Open Energy Information

    Open Energy Info (EERE)

    Name: Gadir Solar Place: Madrid, Spain Zip: 28001 Product: Madrid-based manufacturer of thin-film silicon PV modules. Coordinates: 40.4203, -3.705774 Show Map Loading map......

  19. Primestar Solar | Open Energy Information

    Open Energy Info (EERE)

    Unit B Place: Arvada, Colorado Zip: 80004 Region: Rockies Area Sector: Solar Product: Thin-Film PV Website: www.primestarsolar.com Coordinates: 39.816062, -105.159927 Show...

  20. Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application

    DOE Patents [OSTI]

    Hawkins, G.A.; Clarke, J.

    1975-10-31

    A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

  1. High-field magnets using high-critical-temperature superconducting thin films

    DOE Patents [OSTI]

    Mitlitsky, F.; Hoard, R.W.

    1994-05-10

    High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla are disclosed. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field. 4 figures.

  2. High-field magnets using high-critical-temperature superconducting thin films

    DOE Patents [OSTI]

    Mitlitsky, Fred; Hoard, Ronald W.

    1994-01-01

    High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field.

  3. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    DOE Patents [OSTI]

    Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  4. Silicon-integrated thin-film structure for electro-optic applications

    DOE Patents [OSTI]

    McKee, Rodney A.; Walker, Frederick Joseph

    2000-01-01

    A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

  5. Final Technical Progress Report: High-Efficiency Low-Cost Thin-Film GaAs Photovoltaic Module Development Program; July 14, 2010 - January 13, 2012

    SciTech Connect (OSTI)

    Mattos, L.

    2012-03-01

    This is the final technical progress report of the High-Efficiency Low-Cost Thin-Film GaAs Photovoltaic Module Development Program. Alta Devices has successfully completed all milestones and deliverables established as part of the NREL PV incubator program. During the 18 months of this program, Alta has proven all key processes required to commercialize its solar module product. The incubator focus was on back end process steps directed at conversion of Alta's high quality solar film into high efficiency 1-sun PV modules. This report describes all program deliverables and the work behind each accomplishment.

  6. Understanding the Structure of Amorphous Thin Film Hafnia - Final Paper

    SciTech Connect (OSTI)

    Miranda, Andre

    2015-08-27

    Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn’t been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.

  7. Low-Cost, Lightweight Solar Concentrators - FY13 Q1 | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    KB) More Documents & Publications Low-Cost, Lightweight Solar Concentrators FY13 Q2 Low-Cost, Lightweight Solar Concentrator Low-Cost Light Weigh Thin Film Solar Concentrators

  8. Structural Studies of Al:ZnO Powders and Thin Films | Stanford...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the ZnO lattice, and measure its effect on the crystallinity of thin films prepared by sol-gel techniques, with an aim to understand how these properties affect the film...

  9. Method for making surfactant-templated, high-porosity thin films

    DOE Patents [OSTI]

    Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hongyou

    2001-01-01

    An evaporation-induced self-assembly method to prepare a surfactant-templated thin film by mixing a silica sol, a surfactant, and a hydrophobic polymer and then evaporating a portion of the solvent during coating onto a substrate and then heating to form a liquid-phase, thin film material with a porosity greater than approximately 50 percent. The high porosity thin films can have dielectric constants less than 2 to be suitable for applications requiring low-dielectric constants. An interstitial compound can be added to the mixture, with the interstitial compound either covalently bonded to the pores or physically entrapped within the porous structure. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  10. Role of Polycrystalline Thin-Film PV Technologies in Competitive PV Module Markets: Preprint

    SciTech Connect (OSTI)

    von Roedern, B.; Ullal, H. S.

    2008-05-01

    This paper discusses the developments in thin-film PV technologies and provides an outlook on future commercial module efficiencies achievable based on today's knowledge about champion cell performance.

  11. Nanocrystallization of LiCoO2 Cathodes for Thin Film Batteries Utilizing Pulse Thermal Processing

    SciTech Connect (OSTI)

    2009-04-01

    This factsheet describes a study whose focus is on the nanocrystallization of the LiCoO2 cathode thin films on polyimide substrates and evaluate the microstructural evolution and resistance as a function of PTP processing conditions.

  12. Preparation of W-Ta thin-film thermocouple on diamond anvil cell...

    Office of Scientific and Technical Information (OSTI)

    Preparation of W-Ta thin-film thermocouple on diamond anvil cell for in-situ temperature measurement under high pressure Citation Details In-Document Search Title: Preparation of W...

  13. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    SciTech Connect (OSTI)

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.

  14. Solid state thin film battery having a high temperature lithium alloy anode

    DOE Patents [OSTI]

    Hobson, David O.

    1998-01-01

    An improved rechargeable thin-film lithium battery involves the provision of a higher melting temperature lithium anode. Lithium is alloyed with a suitable solute element to elevate the melting point of the anode to withstand moderately elevated temperatures.

  15. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more » With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

  16. Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

    SciTech Connect (OSTI)

    Repins, Ingrid L.; Kuciauskas, Darius

    2015-07-07

    A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

  17. Micro/nano devices fabricated from Cu-Hf thin films

    DOE Patents [OSTI]

    Luber, Erik J; Ophus, Colin; Mitlin, David; Olsen, Brian; Harrower, Christopher; Radmilovi, Velimir

    2013-06-04

    An all-metal microdevice or nanodevice such as an atomic force microscope probe is manufactured from a copper-hafnium alloy thin film having an x-ray amorphous microstructure.

  18. Pseudo capacitive performance of copper oxide thin films grown by RF sputtering

    SciTech Connect (OSTI)

    Reddy, B. Purusottam; Ganesh, K. Sivajee; Hussain, O. M.

    2015-06-24

    Thin films of Copper Oxide were prepared by radio frequency magnetron sputtering on steel substrates maintained at 250°C under different RF powers ranging from 150W to 250W by keeping the sputtering pressure at 5.7×10{sup −3} mbar and O{sub 2}:Ar ratio of 1:7. The influence of RF power on the pseudo capacitive performance of thin films was studied. The X-ray diffraction studies and Raman studies indicates that all the thin films exhibits CuO phase. The electrochemical studies was done by using three electrode configuration with platinum as reference electrode. From the cyclic voltammetry studies a high rate pseudocapacitance of 227 mFcm{sup −2} at 0.5 mVs{sup −1} and 77% of capacity retention after 1000 cycles was obtained for the CuO thin films prepared at an RF power of 220W.

  19. Electrodynamic Properties of Single-Crystal and Thin-Film Strontium Titanate

    SciTech Connect (OSTI)

    Findikoglu, A.T.; Jia, Q.; Reagor, D.W.; Kwon, C.; Rasmussen, K.O.

    1999-05-13

    The authors present a comparative study of broadband electrodynamic properties of coplanar waveguides made from nonlinear dielectric single-crystal and thin-film SrTiO{sub 3} (STO) with high-temperature superconducting thin-film YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} electrodes. The waveguides that use single-crystal STO exhibit a monotonic increase in refractive index, dielectric nonlinearity, and dissipation with decreasing temperature (from 80 K to 20 K), whereas those based on thin-film STO show similar but weaker effects with increasing temperature. Under dc bias, both types of waveguides show reduced refractive index, but dissipation increases in the case of single-crystal STO, while it decreases in the case of STO thin-films.

  20. Study on the Humidity Susceptibility of Thin-Film CIGS Absorber

    SciTech Connect (OSTI)

    Pern, F. J.; Egaas, B.; To, B.; Jiang, C. S.; Li, J. V.; Glynn, S.; DeHart, C.

    2010-01-01

    The report summarizes the research on the susceptibility of a thermally co-evaporated CuInGaSe2 (CIGS) thin-film absorber to humidity and its consequence on composition, morphology, electrical and electronic properties, and device efficiency.

  1. Cell culture arrays using micron-sized ferromagnetic ring-shaped thin films

    SciTech Connect (OSTI)

    Huang, Chen-Yu; Wei, Zung-Hang; Lai, Mei-Feng; Ger, Tzong-Rong

    2015-05-07

    Cell patterning has become an important technology for tissue engineering. In this research, domain walls are formed at the two ends of a ferromagnetic ring thin film after applying a strong external magnetic field, which can effectively attract magnetically labeled cells and control the position for biological cell. Magnetophoresis experiment was conducted to quantify the magnetic nanoparticle inside the cells. A ring-shaped magnetic thin films array was fabricated through photolithography. It is observed that magnetically labeled cells can be successfully attracted to the two ends of the ring-shaped magnetic thin film structure and more cells were attracted and further attached to the structures. The cells are co-cultured with the structure and kept proliferating; therefore, such ring thin film can be an important candidate for in-vitro biomedical chips or tissue engineering.

  2. Thin film lithium-based batteries and electrochromic devices fabricated with nanocomposite electrode materials

    DOE Patents [OSTI]

    Gillaspie, Dane T; Lee, Se-Hee; Tracy, C. Edwin; Pitts, John Roland

    2014-02-04

    Thin-film lithium-based batteries and electrochromic devices (10) are fabricated with positive electrodes (12) comprising a nanocomposite material composed of lithiated metal oxide nanoparticles (40) dispersed in a matrix composed of lithium tungsten oxide.

  3. Stability Issues of Transparent Conducting Oxides (TCOs) for Thin-Film Photovoltaics (Presentation)

    SciTech Connect (OSTI)

    Pern, J.

    2008-12-01

    Study of stability issues of TCOs for thin-film PV, including degradation of optical, electrical, and structural properties of TCOs in damp heat and required encapsulation to prevent moisture egress.

  4. Electron-beam-evaporated thin films of hafnium dioxide for fabricating...

    Office of Scientific and Technical Information (OSTI)

    Citation Details In-Document Search Title: ... In this paper, the authors report the growth of thin films ... Report Number(s): BNL--108477-2015-JA Journal ID: ISSN ...

  5. Light Trapping, Absorption and Solar Energy Harvesting by Artificial Materials

    SciTech Connect (OSTI)

    John, Sajeev

    2014-08-15

    We provide designs of thin-film solar cells utilizing optimized photonic-crystal light-trapping and numerical simulations of their solar-to-electrical power conversion efficiencies.

  6. Global Solar Energy Inc GSE | Open Energy Information

    Open Energy Info (EERE)

    Inc GSE Jump to: navigation, search Name: Global Solar Energy Inc (GSE) Place: Tucson, Arizona Zip: 85747 Sector: Solar Product: US-based manufacturer of thin-film copper indium...

  7. Third-Generation Solar Cells Using Optical Rectenna - Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The second generation of solar cells focuses on low production costs using thin film cells, which resulted in much lower efficiency rates. The third generation of solar cells has ...

  8. SunJoi Solar Inc | Open Energy Information

    Open Energy Info (EERE)

    Inc Jump to: navigation, search Name: SunJoi Solar Inc Product: Manufacturer of photovoltaic thin film panels and modules. References: SunJoi Solar Inc1 This article is a...

  9. A O Solar Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Solar Co Ltd Jump to: navigation, search Name: A&O Solar Co Ltd Place: Beijing, China Product: China-based thin-film PV cell and module manufacturer Coordinates: 39.90601,...

  10. Spatial localization of excitons and charge carriers in hybrid perovskite thin films

    SciTech Connect (OSTI)

    Simpson, Mary Jane; Doughty, Benjamin; Yang, Bin; Xiao, Kai; Ma, Ying -Zhong

    2015-07-21

    The fundamental photophysics underlying the remarkably high power conversion efficiency of organic-inorganic hybrid perovskite-based solar cells has been increasingly studied using complementary spectroscopic techniques. The spatially heterogeneous polycrystalline morphology of the photoactive layers owing to the presence of distinct crystalline grains has been generally neglected in optical measurements and therefore the reported results are typically averaged over hundreds or even thousands of such grains. Here, we apply femtosecond transient absorption microscopy to spatially and temporally probe ultrafast electronic excited-state dynamics in pristine methylammonium lead tri-iodide (CH3NH3PbI3) thin films and composite structures. We found that the electronic excited-state relaxation kinetics are extremely sensitive to the sample location probed, which was manifested by position-dependent decay timescales and transient signals. As a result, analysis of transient absorption kinetics acquired at distinct spatial positions enabled us to identify contributions of excitons and free charge carriers.

  11. Annealing effect for SnS thin films prepared by high-vacuum evaporation

    SciTech Connect (OSTI)

    Revathi, Naidu Bereznev, Sergei; Loorits, Mihkel; Raudoja, Jaan; Lehner, Julia; Gurevits, Jelena; Traksmaa, Rainer; Mikli, Valdek; Mellikov, Enn; Volobujeva, Olga

    2014-11-01

    Thin films of SnS are deposited onto molybdenum-coated soda lime glass substrates using the high-vacuum evaporation technique at a substrate temperature of 300 °C. The as-deposited SnS layers are then annealed in three different media: (1) H{sub 2}S, (2) argon, and (3) vacuum, for different periods and temperatures to study the changes in the microstructural properties of the layers and to prepare single-phase SnS photoabsorber films. It is found that annealing the layers in H{sub 2}S at 400 °C changes the stoichiometry of the as-deposited SnS films and leads to the formation of a dominant SnS{sub 2} phase. Annealing in an argon atmosphere for 1 h, however, causes no deviations in the composition of the SnS films, though the surface morphology of the annealed SnS layers changes significantly as a result of a 2 h annealing process. The crystalline structure, surface morphology, and photosensitivity of the as-deposited SnS films improves significantly as the result of annealing in vacuum, and the vacuum-annealed films are found to exhibit promising properties for fabricating complete solar cells based on these single-phase SnS photoabsorber layers.

  12. Spatial localization of excitons and charge carriers in hybrid perovskite thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Simpson, Mary Jane; Doughty, Benjamin; Yang, Bin; Xiao, Kai; Ma, Ying -Zhong

    2015-07-21

    The fundamental photophysics underlying the remarkably high power conversion efficiency of organic-inorganic hybrid perovskite-based solar cells has been increasingly studied using complementary spectroscopic techniques. The spatially heterogeneous polycrystalline morphology of the photoactive layers owing to the presence of distinct crystalline grains has been generally neglected in optical measurements and therefore the reported results are typically averaged over hundreds or even thousands of such grains. Here, we apply femtosecond transient absorption microscopy to spatially and temporally probe ultrafast electronic excited-state dynamics in pristine methylammonium lead tri-iodide (CH3NH3PbI3) thin films and composite structures. We found that the electronic excited-state relaxation kinetics aremore » extremely sensitive to the sample location probed, which was manifested by position-dependent decay timescales and transient signals. As a result, analysis of transient absorption kinetics acquired at distinct spatial positions enabled us to identify contributions of excitons and free charge carriers.« less

  13. Partial Shading in Monolithic Thin Film PV Modules: Analysis and Design |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Partial Shading in Monolithic Thin Film PV Modules: Analysis and Design Partial Shading in Monolithic Thin Film PV Modules: Analysis and Design Presented at the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado pvmrw13_ps1_purdue_dongaonkar.pdf (2.37 MB) More Documents & Publications Advanced Combustion Modeling with STAR-CD using Transient Flemelet Models: TIF and TPV Agenda for the PV Module Reliability Workshop, February 26 - 27 2013, Golden,

  14. Process and Hardware for Deposition of Complex Thin-film Alloys over Large

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Areas - Energy Innovation Portal Process and Hardware for Deposition of Complex Thin-film Alloys over Large Areas Colorado State University Contact CSU About This Technology Technology Marketing Summary An instrument and method for depositing thin film alloys over large areas under vacuum. The key features stem from the use of close-space sublimation sources with independent valve and temperature control. Description This innovation is a process and hardware by which deposition of large-area

  15. Apparatus and method for the determination of grain size in thin films

    DOE Patents [OSTI]

    Maris, Humphrey J

    2001-01-01

    A method for the determination of grain size in a thin film sample comprising the steps of measuring first and second changes in the optical response of the thin film, comparing the first and second changes to find the attenuation of a propagating disturbance in the film and associating the attenuation of the disturbance to the grain size of the film. The second change in optical response is time delayed from the first change in optical response.

  16. Apparatus and method for the determination of grain size in thin films

    DOE Patents [OSTI]

    Maris, Humphrey J

    2000-01-01

    A method for the determination of grain size in a thin film sample comprising the steps of measuring first and second changes in the optical response of the thin film, comparing the first and second changes to find the attenuation of a propagating disturbance in the film and associating the attenuation of the disturbance to the grain size of the film. The second change in optical response is time delayed from the first change in optical response.

  17. 2010 Thin Film & Small Scale Mechanical Behavior Gordon Research Conference

    SciTech Connect (OSTI)

    Dr. Thomas Balk

    2010-07-30

    Over the past decades, it has been well established that the mechanical behavior of materials changes when they are confined geometrically at least in one dimension to small scale. It is the aim of the 2010 Gordon Conference on 'Thin Film and Small Scale Mechanical Behavior' to discuss cutting-edge research on elastic, plastic and time-dependent deformation as well as degradation mechanisms like fracture, fatigue and wear at small scales. As in the past, the conference will benefit from contributions from fundamental studies of physical mechanisms linked to material science and engineering reaching towards application in modern applications ranging from optical and microelectronic devices and nano- or micro-electrical mechanical systems to devices for energy production and storage. The conference will feature entirely new testing methodologies and in situ measurements as well as recent progress in atomistic and micromechanical modeling. Particularly, emerging topics in the area of energy conversion and storage, such as material for batteries will be highlighted. The study of small-scale mechanical phenomena in systems related to energy production, conversion or storage offer an enticing opportunity to materials scientists, who can provide new insight and investigate these phenomena with methods that have not previously been exploited.

  18. Ultrafast transient reflectance of epitaxial semiconducting perovskite thin films

    SciTech Connect (OSTI)

    Smolin, S. Y.; Guglietta, G. W.; Baxter, J. B. E-mail: smay@coe.drexel.edu; Scafetta, M. D.; May, S. J. E-mail: smay@coe.drexel.edu

    2014-07-14

    Ultrafast pump-probe transient reflectance (TR) spectroscopy was used to study carrier dynamics in an epitaxial perovskite oxide thin film of LaFeO{sub 3} (LFO) with a thickness of 40 unit cells (16?nm) grown by molecular beam epitaxy on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT). TR spectroscopy shows two negative transients in reflectance with local maxima at ?2.5?eV and ?3.5?eV which correspond to two optical transitions in LFO as determined by ellipsometry. The kinetics at these transients were best fit with an exponential decay model with fast (540 ps), medium (?200 ps), and slow (??3?ns) components that we attribute mainly to recombination of photoexcited carriers. Moreover, these reflectance transients did not completely decay within the observable time window, indicating that ?10% of photoexcited carriers exist for at least 3?ns. This work illustrates that TR spectroscopy can be performed on thin (<20?nm) epitaxial oxide films to provide a quantitative understanding of recombination lifetimes, which are important parameters for the potential utilization of perovskite films in photovoltaic and photocatalytic applications.

  19. Method for bonding thin film thermocouples to ceramics

    DOE Patents [OSTI]

    Kreider, Kenneth G. (Potomac, MD)

    1993-01-01

    A method is provided for adhering a thin film metal thermocouple to a ceramic substrate used in an environment up to 700 degrees Centigrade, such as at a cylinder of an internal combustion engine. The method includes the steps of: depositing a thin layer of a reactive metal on a clean ceramic substrate; and depositing thin layers of platinum and a platinum-10% rhodium alloy forming the respective legs of the thermocouple on the reactive metal layer. The reactive metal layer serves as a bond coat between the thin noble metal thermocouple layers and the ceramic substrate. The thin layers of noble metal are in the range of 1-4 micrometers thick. Preferably, the ceramic substrate is selected from the group consisting of alumina and partially stabilized zirconia. Preferably, the thin layer of reactive metal is in the range of 0.015-0.030 micrometers (15-30 nanometers) thick. The preferred reactive metal is chromium. Other reactive metals may be titanium or zirconium. The thin layer of reactive metal may be deposited by sputtering in ultra high purity argon in a vacuum of approximately 2 milliTorr (0.3 Pascals).

  20. Compositional depth profiling of TaCN thin films

    SciTech Connect (OSTI)

    Adelmann, Christoph; Conard, Thierry; Franquet, Alexis; Brijs, Bert; Munnik, Frans; Burgess, Simon; Witters, Thomas; Meersschaut, Johan; Kittl, Jorge A.; Vandervorst, Wilfried; Van Elshocht, Sven

    2012-07-15

    The composition profiling of thin TaCN films was studied. For the composition profile determination using x-ray photoemission spectrometry (XPS) in combination with Ar sputtering, preferential sputtering effects of N with respect to Ta and C were found to lead to inaccurate elemental concentrations. Sputter yield calculations for the given experimental conditions allowed for the correction of a part of the error, leading to fair accuracy by reference-free measurements. Further improvement of the accuracy was demonstrated by the calibration of the XPS compositions against elastic recoil detection analysis (ERDA) results. For Auger electron spectrometry (AES) in combination with Ar sputtering, accurate results required the calibration against ERDA. Both XPS and AES allowed for a reliable and accurate determination of the compositional profiles of TaCN-based thin films after calibration. Time-of-flight secondary-ion mass spectrometry was also used to assess the composition of the TaCN films. However, the analysis was hampered by large matrix effects due to small unintentional oxygen contents in the films. Energy-dispersive x-ray spectrometry is also discussed, and it is shown that an accurate reference-free measurement of the average film concentration can be achieved.