National Library of Energy BETA

Sample records for 019-10 al nm

  1. Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240350?nm emission

    SciTech Connect (OSTI)

    Himwas, C.; Hertog, M. den; Dang, Le Si; Songmuang, R.; Monroy, E.

    2014-12-15

    We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The Al-Ga intermixing at Al(Ga)N/GaN interfaces and the chemical inhomogeneity in AlGaN NDs evidenced by scanning transmission electron microscopy are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with the Al content, leading to enhanced carrier localization signatures in the luminescence characteristics, i.e., red shift of the emission, s-shaped temperature dependence, and linewidth broadening. Despite these effects, the emission energy of AlGaN/AlN NDs can be tuned in the 240350?nm range with internal quantum efficiencies around 30%.

  2. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  3. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    SciTech Connect (OSTI)

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  4. Synthesis and characterization of 10?nm thick piezoelectric AlN films with high c-axis orientation for miniaturized nanoelectromechanical devices

    SciTech Connect (OSTI)

    Zaghloul, Usama; Piazza, Gianluca

    2014-06-23

    The scaling of piezoelectric nanoelectromechanical systems (NEMS) is challenged by the synthesis of ultrathin and high quality piezoelectric films on very thin electrodes. We report the synthesis and characterization of the thinnest piezoelectric aluminum nitride (AlN) films (10?nm) ever deposited on ultrathin platinum layers (25?nm) using reactive sputtering. X-ray diffraction, high-resolution transmission electron microscopy, and fast Fourier transform analyses confirmed the proper crystal orientation, fine columnar texture, and the continuous lattice structure within individual grains in the deposited AlN nanometer thick films. The average extracted d{sub 31} piezoelectric coefficient for the synthesized films is ?1.73 pC/N, which is comparable to the reported values for micron thick and highly c-axis oriented AlN films. The 10?nm AlN films were employed to demonstrate two different types of optimized piezoelectric nanoactuators. The unimorph actuators exhibit vertical displacements as large as 1.1??m at 0.7?V for 25??m long and 30?nm thick beams. These results have a great potential to realize miniaturized NEMS relays with extremely low voltage, high frequency resonators, and ultrasensitive sensors.

  5. Al

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on the way to the drip line .... 31 Al 28 Mg 32 Si 12 B + 18 O 30 Al* (-pn) 28 Mg 15 C + 18 O 33 Si* (-pn) 31 Al 16 N + 18 O 34 P* (-pn) 32 Si 15 C 10 7 s...

  6. Sub-250?nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO{sub 2}/SiO{sub 2} dielectric mirrors

    SciTech Connect (OSTI)

    Kao, Tsung-Ting; Liu, Yuh-Shiuan; Mahbub Satter, Md.; Li, Xiao-Hang; Lochner, Zachary; Douglas Yoder, P.; Detchprohm, Theeradetch; Dupuis, Russell D.; Shen, Shyh-Chiang Ryou, Jae-Hyun; Fischer, Alec M.; Wei, Yong; Xie, Hongen; Ponce, Fernando A.

    2013-11-18

    We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an Al{sub x}Ga{sub 1?x}N-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250?kW/cm{sup 2}. After employing high-reflectivity SiO{sub 2}/HfO{sub 2} dielectric mirrors on both facets, the threshold pumping power density was further reduced to 180?kW/cm{sup 2}. The internal loss and threshold modal gain can be calculated as 2?cm{sup ?1} and 10.9?cm{sup ?1}, respectively.

  7. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... beyond 22-nm half pitch," Proc. SPIE 7636, 76361J (2010); P. Naulleau, C. ... resist and mask materials learning," Proc. SPIE 7985, 798509 (2011). ALS Science Highlight ...

  8. Santa Fe, NM 87506

    Office of Environmental Management (EM)

    July 31, 2014 Ms. Kimberly Davis Lebak Manager Los Alamos Field Office 3747 West Jemez Road, MS A316 Los Alamos, NM 87544 Mr. Pete Maggiore Assistant Manager for Environmental Operations 3747 West Jemez Road, MS A316 Los Alamos, NM 87544 Dear Ms. Lebak and Mr. Maggiore, I am pleased to enclose Recommendation 2014-02, unanimously approved by the Northern New Mexico Citizens' Advisory Board at its July 30 th meeting in Santa Fe. Please call Lee Bishop, DDFO or Menice Santistevan, Executive

  9. Santa Fe, NM 87506

    Office of Environmental Management (EM)

    Large Format Carbon Enhanced VRLA Battery Test Results EESAT 2009 Funded by the Energy Storage Systems Program of the U.S. Department Of Energy (DOE/ESS) through Sandia National Laboratories (SNL) October 4 - 7, 2009 Seattle, Washington Presented by: Tom Hund Sandia National Laboratories Albuquerque, NM (505) 844-8627 tdhund@sandia.gov *Sandia is a multi-program laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear

  10. Santa Fe, NM 87506

    Office of Environmental Management (EM)

    5 Ms. Christine Gelles, Acting Manager EM-LA Field Office 3747 West Jemez Road, MS A316 Los Alamos, NM 87544 Dear Ms. Gelles, I am pleased to enclose Recommendation 2015-03, unanimously approved by the Northern New Mexico Citizens' Advisory Board at its April 8, 2015 Combined Committee meeting in Pojoaque, New Mexico. Please call Lee Bishop, Co-DDFO, Michael Gardipe, Co-DDFO, or Menice Santistevan, Executive Director, if you have questions regarding this recommendation. We look forward to the

  11. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    at ALS Beamline 12.0.1.3, advanced EUV photoresist research can be performed while high-power stand-alone light sources are still being developed. High-quality 16-nm lines and...

  12. NM Invest | Open Energy Information

    Open Energy Info (EERE)

    Invest Jump to: navigation, search Name: NM Invest Place: Tyler, Texas Zip: 75703 Sector: Renewable Energy Product: Texas-based mezzanine investor to renewable projects, primarily...

  13. DOE - Office of Legacy Management -- Bayo Canyon NM Site - NM...

    Office of Legacy Management (LM)

    Land Surveying Preconstruction Meeting. August 13, 1982. NM.01-9 - Letter, R.L. Copper to G. Dawson. September 10, 1982. Required items for Purchase Contract 14501-01...

  14. Nanobumps on silicon created with polystyrene spheres and 248 or 308 nm laser pulses

    SciTech Connect (OSTI)

    Piparia, Reema; Rothe, Erhard W.; Baird, R. J.

    2006-11-27

    Huang et al. [Appl. Phys. Lett. 86, 161911 (2005)] formed arrays of nanobumps on a silicon substrate. They applied a 248 nm laser pulse to a surface monolayer of 1-{mu}m-diameter polystyrene spheres. The authors first replicated their experiment with 248 nm light. But when 308 nm pulses were applied instead, the nanobumps had a different shape and composition. At 248 nm, much of the laser light is absorbed in the polystyrene, which serves to quickly distort, melt, and ablate the sphere. At 308 nm, very little light is absorbed. The nanobumps from 248 nm radiation are organic polymers, while those formed with 308 nm pulses are silicon based.

  15. THE SPECTRUM OF THORIUM FROM 250 nm TO 5500 nm: RITZ WAVELENGTHS AND OPTIMIZED ENERGY LEVELS

    SciTech Connect (OSTI)

    Redman, Stephen L.; Nave, Gillian; Sansonetti, Craig J.

    2014-03-01

    We have made precise observations of a thorium-argon hollow cathode lamp emission spectrum in the region between 350 nm and 1175 nm using a high-resolution Fourier transform spectrometer. Our measurements are combined with results from seven previously published thorium line lists to re-optimize the energy levels of neutral, singly, and doubly ionized thorium (Th I, Th II, and Th III). Using the optimized level values, we calculate accurate Ritz wavelengths for 19, 874 thorium lines between 250 nm and 5500 nm (40, 000 cm{sup –1} to 1800 cm{sup –1}). We have also found 102 new thorium energy levels. A systematic analysis of previous measurements in light of our new results allows us to identify and propose corrections for systematic errors in Palmer and Engleman and typographical errors and incorrect classifications in Kerber et al. We also found a large scatter with respect to the thorium line list of Lovis and Pepe. We anticipate that our Ritz wavelengths will lead to improved measurement accuracy for current and future spectrographs that make use of thorium-argon or thorium-neon lamps as calibration standards.

  16. ALS Spectrum

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Spectrum Print Begun in 2007, ALS Spectrum is a publication that encapsulates the same type of information contained in the ALS Activity Report but in a short, readable, ...

  17. 248-nm photolysis of tricarbonylnitrosylcobalt

    SciTech Connect (OSTI)

    Rayner, D.M.; Nazran, A.S.; Drouin, M.; Hackett, P.A.

    1986-06-19

    Laser-based time-resolved infrared absorption spectroscopy has been applied to the study of the 248-nm photolysis of the pseudo-nickel carbonyl, tricarbonylnitrosylcobalt, in the gas phase. Co(CO)/sub 3/NO dissociates by a series of sequential ligand eliminations to give predominantly CoCO. This species reacts back with parent Co(CO)/sub 3/NO with a gas kinetic rate constant of (6.4 +/- 0.6) x 10/sup -10/ cm/sup 3/ molecule/sup -1/ s/sup -1/ to form a binuclear species, (Co/sub 2/(CO)/sub 4/NO), of unknown structure. Added CO results in the formation of Co(CO)/sub 3/ and finally Co(CO)/sub 4/. The rate constant for the reactions of CO with Co(CO) is (6.2 +/- 0.6) x 10/sup -11/ cm/sup 3/ molecule/sup -1/ s/sup -1/ which is also a lower limit for the rates of reaction of CO with Co(CO)/sub 2/ and Co(CO)/sub 3/. This behavior shows marked similarity with recent work on the other carbonyls and begins to establish a general pattern for metal carbonyl photolysis.

  18. ALS@20

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    tribulations encountered during the construction of the ALS from former Director Jay Marx, current ALS Scientific Director Steve Kevan and Director Roger Falcone talked about...

  19. ALS Spectrum

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Spectrum Print Begun in 2007, ALS Spectrum is a publication that encapsulates the same type of information contained in the ALS Activity Report but in a short, readable,...

  20. Industry @ ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industry @ ALS Industry @ ALS Hewlett Packard Labs Gains Insights with Innovative ALS Research Tools Print Thursday, 05 May 2016 11:21 For the past eight years, Hewlett Packard Labs, the central research organization of Hewlett Packard Enterprise, has been using cutting-edge ALS techniques to advance some of their most promising technological research, including vanadium dioxide phase transitions and atomic movement during memristor operation. Summary Slide Read more... ALS, Molecular Foundry,

  1. ALS Spectrum

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Spectrum Print Begun in 2007, ALS Spectrum is a publication that encapsulates the same type of information contained in the ALS Activity Report but in a short, readable, newsletter-like format. Featured scientific and facility developments are front-paged, and a roundup of science highlights is provided in easily browsable summaries with Web links. Contents also include brief reports from ALS staff and user groups, articles about ALS people and events, and facility updates. These documents

  2. ALS Spectrum

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Spectrum Print Begun in 2007, ALS Spectrum is a publication that encapsulates the same type of information contained in the ALS Activity Report but in a short, readable, newsletter-like format. Featured scientific and facility developments are front-paged, and a roundup of science highlights is provided in easily browsable summaries with Web links. Contents also include brief reports from ALS staff and user groups, articles about ALS people and events, and facility updates. These documents

  3. ALS Spectrum

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Spectrum Print Begun in 2007, ALS Spectrum is a publication that encapsulates the same type of information contained in the ALS Activity Report but in a short, readable, newsletter-like format. Featured scientific and facility developments are front-paged, and a roundup of science highlights is provided in easily browsable summaries with Web links. Contents also include brief reports from ALS staff and user groups, articles about ALS people and events, and facility updates. These documents are

  4. ALS Spectrum

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Spectrum Print Begun in 2007, ALS Spectrum is a publication that encapsulates the same type of information contained in the ALS Activity Report but in a short, readable, newsletter-like format. Featured scientific and facility developments are front-paged, and a roundup of science highlights is provided in easily browsable summaries with Web links. Contents also include brief reports from ALS staff and user groups, articles about ALS people and events, and facility updates. These documents are

  5. FAPAC-NM Executive Board | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    Our Locations Albuquerque Complex Federal Asian Pacific American Council - New Mexico Chapter Albuquerque, NM FAPAC-NM Executive Board FAPAC-NM Executive Board "Promoting...

  6. ALS Visitors

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... September 2012 Congressman Steve Womack (R-Arkansas) toured the ALS on September 25, along ... Womack, a freshman member of Congress is Vice Chairman of the House Energy and Water ...

  7. Radiation Tolerance of 65nm CMOS Transistors

    SciTech Connect (OSTI)

    Krohn, M.; Bentele, B.; Christian, D. C.; Cumalat, J. P.; Deptuch, G.; Fahim, F.; Hoff, J.; Shenai, A.; Wagner, S. R.

    2015-12-11

    We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.

  8. Radiation Tolerance of 65nm CMOS Transistors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Krohn, M.; Bentele, B.; Christian, D. C.; Cumalat, J. P.; Deptuch, G.; Fahim, F.; Hoff, J.; Shenai, A.; Wagner, S. R.

    2015-12-11

    We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20°C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.

  9. AL. I

    Office of Legacy Management (LM)

    AL. I Department of Energy Washington, DC 20545 OCT 13 Vii87 Mr. John T. Shields A214 National Fertilizer Development Center Tennessee Valley Authority Muscle Shoals, Alabama 35660 Dear Mr. Shields: As you may know, the Department of Energy (DOE) is evaluating the radiological condition of sites that were utilized under the Manhattan Engineer District and the Atomic Energy Commission (AEC) during the early years of nuclear development to determine whether they need remedial action and whether

  10. Photo Album Of FAPAC - NM Activities | National Nuclear Security...

    National Nuclear Security Administration (NNSA)

    Our Locations Albuquerque Complex Federal Asian Pacific American Council - New Mexico Chapter Albuquerque, NM Photo Album Of FAPAC - NM Activities Photo Album Of FAPAC -...

  11. New Zone Plate for Soft X-Ray Microscopy at 15-nm Spatial Resolution

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Zone Plate for Soft X-Ray Microscopy at 15-nm Spatial Resolution New Zone Plate for Soft X-Ray Microscopy at 15-nm Spatial Resolution Print Wednesday, 31 August 2005 00:00 Analytical tools that combine spatial resolution with elemental and chemical identification at the nanometer scale along with large penetration depth are indispensable for the life and physical sciences. The XM-1 soft x-ray microscope at the ALS produces images that not only reveal structures but can identify their

  12. ALS Communications Group

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Communications Group Print From left: Ashley White, Lori Tamura, Keri Troutman, and Carina Braun. The ALS Communications staff maintain the ALS Web site; write and edit all...

  13. DOE - Office of Legacy Management -- Trinity Test Site - NM 17

    Office of Legacy Management (LM)

    Trinity Test Site - NM 17 FUSRAP Considered Sites Site: TRINITY TEST SITE (NM.17 ) Eliminated from consideration under FUSRAP - U.S. Army controls site Designated Name: Not Designated Alternate Name: None Location: missile range - 30 miles west of Carrizozo , White Sands , New Mexico NM.17-1 Evaluation Year: 1985 NM.17-1 Site Operations: Detonation of the first atomic bomb occurred at this site. NM.17-1 Site Disposition: Eliminated NM.17-1 Radioactive Materials Handled: Yes Primary Radioactive

  14. New Zone Plate for Soft X-Ray Microscopy at 15-nm Spatial Resolution

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Zone Plate for Soft X-Ray Microscopy at 15-nm Spatial Resolution Print Analytical tools that combine spatial resolution with elemental and chemical identification at the nanometer scale along with large penetration depth are indispensable for the life and physical sciences. The XM-1 soft x-ray microscope at the ALS produces images that not only reveal structures but can identify their chemical elements and measure magnetic and other properties as well. Now a new method for creating optical

  15. New Zone Plate for Soft X-Ray Microscopy at 15-nm Spatial Resolution

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Zone Plate for Soft X-Ray Microscopy at 15-nm Spatial Resolution Print Analytical tools that combine spatial resolution with elemental and chemical identification at the nanometer scale along with large penetration depth are indispensable for the life and physical sciences. The XM-1 soft x-ray microscope at the ALS produces images that not only reveal structures but can identify their chemical elements and measure magnetic and other properties as well. Now a new method for creating optical

  16. New Zone Plate for Soft X-Ray Microscopy at 15-nm Spatial Resolution

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Zone Plate for Soft X-Ray Microscopy at 15-nm Spatial Resolution Print Analytical tools that combine spatial resolution with elemental and chemical identification at the nanometer scale along with large penetration depth are indispensable for the life and physical sciences. The XM-1 soft x-ray microscope at the ALS produces images that not only reveal structures but can identify their chemical elements and measure magnetic and other properties as well. Now a new method for creating optical

  17. Ion Exclusion by Sub 2-nm Carbon Nanotube Pores (Conference)...

    Office of Scientific and Technical Information (OSTI)

    Conference: Ion Exclusion by Sub 2-nm Carbon Nanotube Pores Citation Details In-Document Search Title: Ion Exclusion by Sub 2-nm Carbon Nanotube Pores Carbon nanotubes offer an ...

  18. RAPID/Roadmap/3-NM-d | Open Energy Information

    Open Energy Info (EERE)

    including an advanced annual rental installment. In addition, the developer must enter into the bid lease within 30 days. 19.2.9.12.A NMAC. 3-NM-d.13 to 3 NM-d.14 - Business...

  19. RAPID/Roadmap/3-NM-f | Open Energy Information

    Open Energy Info (EERE)

    from the NMDOT by contemplating affects the project may have on cultural andor environmental resources. 3-NM-f Public Highway Utility Accommodation Permit.pdf 3-NM-f Public...

  20. New Mexico Non-Taxable Transaction Certificate (NM NTTC) Request

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mexico Non-Taxable Transaction Certificate (NM NTTC) Request This form is for vendors of Los Alamos National Laboratory. To request a NM Non-Taxable Transaction Certificate (NTTC),...

  1. Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Trippe, J. M.; Reed, R. A.; Austin, R. A.; Sierawski, B. D.; Weller, R. A.; Funkhouser, E. D.; King, M. P.; Narasimham, B.; Bartz, B.; Baumann, R.; et al

    2015-12-01

    In this study, we present experimental evidence of single electron-induced upsets in commercial 28 nm and 45 nm CMOS SRAMs from a monoenergetic electron beam. Upsets were observed in both technology nodes when the SRAM was operated in a low power state. The experimental cross section depends strongly on both bias and technology node feature size, consistent with previous work in which SRAMs were irradiated with low energy muons and protons. Accompanying simulations demonstrate that δ-rays produced by the primary electrons are responsible for the observed upsets. Additional simulations predict the on-orbit event rates for various Earth and Jovian environmentsmore » for a set of sensitive volumes representative of current technology nodes. The electron contribution to the total upset rate for Earth environments is significant for critical charges as high as 0.2 fC. This value is comparable to that of sub-22 nm bulk SRAMs. Similarly, for the Jovian environment, the electron-induced upset rate is larger than the proton-induced upset rate for critical charges as high as 0.3 fC.« less

  2. Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs

    SciTech Connect (OSTI)

    Trippe, J. M.; Reed, R. A.; Austin, R. A.; Sierawski, B. D.; Weller, R. A.; Funkhouser, E. D.; King, M. P.; Narasimham, B.; Bartz, B.; Baumann, R.; Schrimpf, R. D.; Labello, R.; Nichols, J.; Weeden-Wright, S. L.

    2015-12-01

    In this study, we present experimental evidence of single electron-induced upsets in commercial 28 nm and 45 nm CMOS SRAMs from a monoenergetic electron beam. Upsets were observed in both technology nodes when the SRAM was operated in a low power state. The experimental cross section depends strongly on both bias and technology node feature size, consistent with previous work in which SRAMs were irradiated with low energy muons and protons. Accompanying simulations demonstrate that δ-rays produced by the primary electrons are responsible for the observed upsets. Additional simulations predict the on-orbit event rates for various Earth and Jovian environments for a set of sensitive volumes representative of current technology nodes. The electron contribution to the total upset rate for Earth environments is significant for critical charges as high as 0.2 fC. This value is comparable to that of sub-22 nm bulk SRAMs. Similarly, for the Jovian environment, the electron-induced upset rate is larger than the proton-induced upset rate for critical charges as high as 0.3 fC.

  3. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paving the Way to Nanoelectronics 16 nm and Smaller Paving the Way to Nanoelectronics 16 nm and Smaller Print Wednesday, 30 March 2011 00:00 As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to

  4. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

    SciTech Connect (OSTI)

    Guo, Wei Bryan, Zachary; Kirste, Ronny; Bryan, Isaac; Hussey, Lindsay; Bobea, Milena; Haidet, Brian; Collazo, Ramn; Sitar, Zlatko; Xie, Jinqiao; Mita, Seiji; Gerhold, Michael

    2014-03-14

    Optical gain spectra for ?250?nm stimulated emission were compared in three different AlGaN-based structures grown on single crystalline AlN substrates: a single AlGaN film, a double heterostructure (DH), and a Multiple Quantum Well (MQW) structure; respective threshold pumping power densities of 700, 250, and 150?kW/cm{sup 2} were observed. Above threshold, the emission was transverse-electric polarized and as narrow as 1.8?nm without a cavity. The DH and MQW structures showed gain values of 5060?cm{sup ?1} when pumped at 1?MW/cm{sup 2}. The results demonstrated the excellent optical quality of the AlGaN-based heterostructures grown on AlN substrates and their potential for realizing electrically pumped sub-280?nm laser diodes.

  5. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    SciTech Connect (OSTI)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

    2014-09-15

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300?nm GaN/ 200?nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8??10{sup 12} to 2.1 10{sup 13} cm{sup ?2} as the AlN barrier thickness increased from 2.2 to 4.5?nm, while a 4.5?nm AlN barrier would result to 3.1??10{sup 13} cm{sup ?2} on a GaN buffer layer. The 3.0?nm AlN barrier structure exhibited the highest 2DEG mobility of 900?cm{sup 2}/Vs for a density of 1.3??10{sup 13} cm{sup ?2}. The results were also confirmed by the performance of 1??m gate-length transistors. The scaling of AlN barrier thickness from 1.5?nm to 4.5?nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63?A/mm. The maximum drain-source current was 1.1?A/mm for AlN barrier thickness of 3.0?nm and 3.7?nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0?nm AlN barrier.

  6. ALS User Meeting

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    User Meeting ALS User Meeting web banner ALS User Meeting: October 5-7, 2015 Home Agenda Awards Exhibitors Lodging Posters Registration Transportation Workshops Contact Us User...

  7. ALS User Meeting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS User Meeting Print web banner ALS User Meeting: October 5-7, 2015 Home Agenda Awards Exhibitors Lodging Posters Registration Transportation Workshops Contact Us User Meeting...

  8. ALS Users' Association Charter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Source (ALS) at the Lawrence Berkeley Laboratory (LBL) for their research and the ALS management, as well as to provide a channel for communication with other synchrotron...

  9. He ion irradiation damage to Al/Nb multilayers

    SciTech Connect (OSTI)

    Misra, Amit; Li, Nan; Martin, M S; Anderoglu, Osman; Shao, L; Wang, H; Zhang, X

    2009-01-01

    We investigated the evolution of microstructure and mechanical properties of sputter-deposited Al/Nb multilayers with individual layer thickness, h, of 1-200 nm, subjected to helium ion irradiations: 100 keV He{sup +} ions with a dose of 6 x 10{sup 16}/cm{sup 2}. Helium bubbles, 1-2 nm in diameter, were observed. When h is greater than 25 nm, hardnesses of irradiated multilayers barely change, whereas radiation hardening is more significant at smaller h. Transmission electron microscopy and scanning transmission electron microscopy studies reveal the formation of a thin layer of Nb{sub 3}Al intermetallic along the Al/Nb interface as a consequence of radiation induced intermixing. The dependence of radiation hardening on h is interpreted by using a composite model considering the formation of the hard Nb{sub 3}Al intermetallic layer.

  10. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paving the Way to Nanoelectronics 16 nm and Smaller Print As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the industry's future needs. Despite strong progress in EUV lithography over

  11. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paving the Way to Nanoelectronics 16 nm and Smaller Print As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the industry's future needs. Despite strong progress in EUV lithography over

  12. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paving the Way to Nanoelectronics 16 nm and Smaller Print As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the industry's future needs. Despite strong progress in EUV lithography over

  13. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paving the Way to Nanoelectronics 16 nm and Smaller Print As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the industry's future needs. Despite strong progress in EUV lithography over

  14. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paving the Way to Nanoelectronics 16 nm and Smaller Print As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the industry's future needs. Despite strong progress in EUV lithography over

  15. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paving the Way to Nanoelectronics 16 nm and Smaller Print As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the industry's future needs. Despite strong progress in EUV lithography over

  16. NM (United States)] 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS...

    Office of Scientific and Technical Information (OSTI)

    Clayton, Steven Los Alamos National Lab. (LANL), Los Alamos, NM (United States) 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; 73 NUCLEAR PHYSICS AND RADIATION PHYSICS;...

  17. RAPID/Roadmap/12-NM-a | Open Energy Information

    Open Energy Info (EERE)

    Biological Resource Considerations (12-NM-a) The New Mexico Department of Game and Fish (NMDGF) preserves endangered or threatened wildlife in the state against any direct...

  18. RAPID/Roadmap/11-NM-b | Open Energy Information

    Open Energy Info (EERE)

    Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Cultural Resource Investigation Process (11-NM-b) Before...

  19. RAPID/Roadmap/3-NM-c | Open Energy Information

    Open Energy Info (EERE)

    Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us State Encroachment Process (3-NM-c) The New Mexico...

  20. Structure of a novel 13 nm dodecahedral nanocage assembled from...

    Office of Scientific and Technical Information (OSTI)

    Structure of a novel 13 nm dodecahedral nanocage assembled from a redesigned bacterial microcompartment shell protein Citation Details In-Document Search Title: Structure of a ...

  1. RAPID/Roadmap/15-NM-a | Open Energy Information

    Open Energy Info (EERE)

    BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Air Quality Permit - Construction Permit (15-NM-a) This flowchart illustrates the process...

  2. RAPID/Roadmap/15-NM-c | Open Energy Information

    Open Energy Info (EERE)

    BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Air Quality Permit - Operating Permit (15-NM-c) This flowchart illustrates the process for...

  3. RAPID/Roadmap/15-NM-b | Open Energy Information

    Open Energy Info (EERE)

    BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Air Quality Permit - Accelerated Construction Permit Review (15-NM-b) The developer may...

  4. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the...

  5. RAPID/Roadmap/5-NM-a | Open Energy Information

    Open Energy Info (EERE)

    Hydropower Solar Tools Contribute Contact Us Drilling and Well Development (5-NM-a) The Oil Conservation Division of the New Mexico Energy, Minerals and Natural Resources...

  6. RAPID/Roadmap/7-NM-c | Open Energy Information

    Open Energy Info (EERE)

    NM-c < RAPID | Roadmap Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools...

  7. RAPID/Roadmap/14-NM-b | Open Energy Information

    Open Energy Info (EERE)

    Roadmap14-NM-b < RAPID | Roadmap Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal Hydropower...

  8. RAPID/Roadmap/3-NM-b | Open Energy Information

    Open Energy Info (EERE)

    RAPIDRoadmap3-NM-b < RAPID | Roadmap Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal Hydropower...

  9. RAPID/Roadmap/14-NM-c | Open Energy Information

    Open Energy Info (EERE)

    Geothermal Hydropower Solar Tools Contribute Contact Us Underground Injection Control Permit (14-NM-c) The Underground Injection Control (UIC) Permit process in New Mexico...

  10. RAPID/Roadmap/19-NM-a | Open Energy Information

    Open Energy Info (EERE)

    BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Water Access and Water Rights Overview (19-NM-a) Similar to many western states, only a...

  11. Sandia, the Atlantic Council, and NM Water Resource Research...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the Atlantic Council, and NM Water Resource Research Institute Sponsor Roundtable on Western Water Scarcity - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us ...

  12. DOE - Office of Legacy Management -- LASL Tract OO - NM 06

    Office of Legacy Management (LM)

    Tract OO - NM 06 FUSRAP Considered Sites Site: LASL TRACT OO (NM.06 ) Eliminated from consideration under FUSRAP - Site was released by the AEC for sale and unrestricted use in 1976 Designated Name: Not Designated Alternate Name: None Location: Los Alamos , New Mexico NM.06-1 Evaluation Year: 1987 NM.06-1 Site Operations: Site consists of an area of 3.85 acres on the Los Alamos Scientific Laboratory compound. This tract of land was a location for a fire alarm equipment building and part of power

  13. RAPID/Roadmap/3-NM-a | Open Energy Information

    Open Energy Info (EERE)

    State Land Office (NMSLO) to develop geothermal resources on state lands under the New Mexico Geothermal Resources Act and regulations promulgated in N.M. Admin. Code part...

  14. RAPID/Roadmap/11-NM-a | Open Energy Information

    Open Energy Info (EERE)

    where cultural resources are discovered during the project. In instances where human burials are discovered, the requirements are more stringent. 11-NM-a State Cultural...

  15. DOE - Office of Legacy Management -- ACF Industries - NM 05

    Office of Legacy Management (LM)

    Eliminated from consideration under FUSRAP - DOD site Designated Name: Not Designated ... from consideration under FUSRAP - DOD site NM.05-3 Also see Documents Related to ...

  16. Generation and use of high power 213 nm and 266 nm laser radiation and tunable 210-400 nm laser radiation with BBO crystal matrix array

    DOE Patents [OSTI]

    Gruen, Dieter M.

    2000-01-01

    A 213 nm laser beam is capable of single photon ablative photodecomposition for the removal of a polymer or biological material substrate. Breaking the molecular bonds and displacing the molecules away from the substrate in a very short time period results in most of the laser photon energy being carried away by the displaced molecules, thus minimizing thermal damage to the substrate. The incident laser beam may be unfocussed and is preferably produced by quintupling the 1064 nm radiation from a Nd:YAG solid state laser, i.e., at 213 nm. In one application, the 213 nm laser beam is expanded in cross section and directed through a plurality of small beta barium borate (BBO) crystals for increasing the energy per photon of the laser radiation directed onto the substrate. The BBO crystals are arranged in a crystal matrix array to provide a large laser beam transmission area capable of accommodating high energy laser radiation without damaging the BBO crystals. The BBO crystal matrix array may also be used with 266 nm laser radiation for carrying out single or multi photon ablative photodecomposition. The BBO crystal matrix array may also be used in an optical parametric oscillator mode to generate high power tunable laser radiation in the range of 210-400 nm.

  17. ALS User Meeting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS User Meeting October 3-5, 2011 Lawrence Berkeley National Laboratory, California

  18. ALS Chemistry Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Chemistry Lab Print ALS Chemistry Labs The ALS Chemistry Labs are located in the User Support Building (15-130) and in Building 6 (6-2233)*. These spaces are dedicated for chemistry work that involves higher quantities, higher toxicity or reactivity, and/or more complex work activity than is allowed on the ALS experiment floor. In addition, the great majority of hazardous chemicals at the ALS are stored in these facilities. Standard chemical safety engineering, administrative and PPE

  19. ALS Chemistry Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Chemistry Lab Print ALS Chemistry Labs The ALS Chemistry Labs are located in the User Support Building (15-130) and in Building 6 (6-2233)*. These spaces are dedicated for chemistry work that involves higher quantities, higher toxicity or reactivity, and/or more complex work activity than is allowed on the ALS experiment floor. In addition, the great majority of hazardous chemicals at the ALS are stored in these facilities. Standard chemical safety engineering, administrative and PPE

  20. New Mexico Non-Taxable Transaction Certificate (NM NTTC) Request

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mexico Non-Taxable Transaction Certificate (NM NTTC) Request This form is for vendors of Los Alamos National Laboratory. To request a NM Non-Taxable Transaction Certificate (NTTC), please provide the information requested below. Request can be submitted by mail, email or fax to: Los Alamos National Laboratory P.O. Box 1663 Accounts Payable, MS P240 Los Alamos, NM 87545 Fax: (505) 665-8357 processsupport@lanl.gov Company Name (as registered with Tax Authority) NOTE: If registered with the State

  1. ALS Chemistry Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Chemistry Lab Print ALS Chemistry Labs The ALS Chemistry Labs are located in the User Support Building (15-130) and in Building 6 (6-2233)*. These spaces are dedicated for chemistry work that involves higher quantities, higher toxicity or reactivity, and/or more complex work activity than is allowed on the ALS experiment floor. In addition, the great majority of hazardous chemicals at the ALS are stored in these facilities. Standard chemical safety engineering, administrative and PPE controls

  2. RAPID/Roadmap/6-NM-b | Open Energy Information

    Open Energy Info (EERE)

    storm water permit must comply with the process outlined in Green arrow.PNG 6-FD-a: Storm Water Construction General Permit Process Flowchart 6-NM-b Construction Storm...

  3. NM Underground Storage Tank Registration | Open Energy Information

    Open Energy Info (EERE)

    Underground Storage Tank Registration Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- OtherOther: NM Underground Storage Tank RegistrationLegal...

  4. Photoluminescent 1-2 nm sized silicon nanoparticles: A surface...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Photoluminescent 1-2 nm sized silicon nanoparticles: A surface-dependent system Authors: Romero, J.J., Llansola-Portols, M.J., Dell'Arciprete, M.L., Rodrguez, H.B., Moore,...

  5. RAPID/Roadmap/14-NM-e | Open Energy Information

    Open Energy Info (EERE)

    Ground Water Discharge Permit (14-NM-e) The New Mexico Environment Department (NMED) issues Ground Water Discharge Permits in the state of New Mexico. No person may cause or...

  6. RAPID/Roadmap/19-NM-b | Open Energy Information

    Open Energy Info (EERE)

    a new permit and fee will be required for any drilling beyond the permit expiration date. Process Flowchart 19-NM-b - Permit to Drill a Well with No Consumptive Use of Water.pdf...

  7. File:INL-geothermal-nm.pdf | Open Energy Information

    Open Energy Info (EERE)

    nm.pdf Jump to: navigation, search File File history File usage New Mexico Geothermal Resources Size of this preview: 466 599 pixels. Other resolution: 467 600 pixels. Full...

  8. RAPID/Roadmap/11-NM-d | Open Energy Information

    Open Energy Info (EERE)

    discovery process. NMAC 4.10.8.20. 11-NM-d Cultural Resource Discovery Process.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number...

  9. RAPID/Roadmap/20-NM-a | Open Energy Information

    Open Energy Info (EERE)

    and abandonment are outlined in NMAC 19.14.73.8. 20-NM-a - Well Abandonment Process.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number...

  10. DOE - Office of Legacy Management -- Project Gnome Site - NM 12

    Office of Legacy Management (LM)

    Gnome Site - NM 12 FUSRAP Considered Sites Site: Project Gnome Site (NM.12) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: Also see Gnome-Coach, New Mexico, Site Documents Related to Project Gnome Site Conditional Certificate of Completion. Attached letter from New Mexico Environment Department of DOE dated September 25, 2014. Fact Sheet

  11. Access to the ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Gate Access Access to the ALS Print User Access The ALS experiment floor (Building 6) is a Controlled Access Area for radiation protection. All ALS users are required to register with the ALS User Services Office and take safety training (see Complete Safety Training ) before they are issued a Berkeley Lab ID badge and granted access to the facility. Note: Users arriving at the ALS outside registration business hours (Monday-Friday 8:00 a.m.-4:00 p.m.) must notify the User Office in advance and

  12. Size dependent compressibility of nano-ceria: Minimum near 33 nm

    SciTech Connect (OSTI)

    Rodenbough, Philip P.; Song, Junhua; Chan, Siu-Wai; Walker, David; Clark, Simon M.; Kalkan, Bora

    2015-04-20

    We report the crystallite-size-dependency of the compressibility of nanoceria under hydrostatic pressure for a wide variety of crystallite diameters and comment on the size-based trends indicating an extremum near 33 nm. Uniform nano-crystals of ceria were synthesized by basic precipitation from cerium (III) nitrate. Size-control was achieved by adjusting mixing time and, for larger particles, a subsequent annealing temperature. The nano-crystals were characterized by transmission electron microscopy and standard ambient x-ray diffraction (XRD). Compressibility, or its reciprocal, bulk modulus, was measured with high-pressure XRD at LBL-ALS, using helium, neon, or argon as the pressure-transmitting medium for all samples. As crystallite size decreased below 100 nm, the bulk modulus first increased, and then decreased, achieving a maximum near a crystallite diameter of 33 nm. We review earlier work and examine several possible explanations for the peaking of bulk modulus at an intermediate crystallite size.

  13. Origin State>> CA CA ID ID ID IL KY MD MO NM NM NY NY OH SC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MO NM NM NY NY OH SC TN TN TN, WA, CA TN TN TN TN Total Shipments by Route Lawrence Livermore National Laboratory General Atomics Batelle Energy Alliance Idaho National Laboratory Advanced Mixed Waste Treatment Project Argonne National Laboratory Paducah Gaseous Diffusion Plant Aberdeen Proving Grounds National Security Technologies Sandia National Laboratory Los Alamos National Laboratory Brookhaven National Laboratory CH2M Hill B&W West Valley, LLC Portsmouth Gaseous Diffusion Plant

  14. Origin State>> CA CA ID ID ID IL KY MD NM NM NV NY NY OH TN

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NM NM NV NY NY OH TN TN TN, WA, CA TN TN TN TN TX Total Shipments by Route Lawrence Livermore National Laboratory General Atomics Advanced Mixed Waste Treatment Project Batelle Energy Alliance Idaho National Laboratory Argonne National Laboratory Paducah Gaseous Diffusion Plant Aberdeen Proving Ground Los Alamos National Laboratory Sandia National Laboratory National Security Technologies Brookhaven National Laboratory West Valley Environmental Services Portsmouth Gaseous Diffusion Plant

  15. Origin State>> CA ID ID ID IL KY MD NM NM NY NY OH SC TN TN

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MD NM NM NY NY OH SC TN TN TN, WA, CA TN TN TN TN TX Total Shipments by Route Lawrence Livermore National Laboratory Advanced Mixed Waste Treatment Project Batelle Energy Alliance Idaho National Laboratory Argonne National Laboratory Paducah Gaseous Diffusion Plant Aberdeen Proving Ground Los Alamos National Laboratory Sandia National Laboratory Brookhaven National Laboratory West Valley Environmental Services Portsmouth Gaseous Diffusion Plant Savannah River Site Duratek/Energy Solutions Babcox

  16. Origin State>> CA ID ID ID IL NM NM OH TN TN TN, WA, CA TN TN

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NM NM OH TN TN TN, WA, CA TN TN TN TN TX Total Shipments by Route Lawrence Livermore National Laboratory Batelle Energy Alliance Idaho National Laboratory Advanced Mixed Waste Treatment Project Argonne National Laboratory Sandia National Laboratory Los Alamos National Laboratory Portsmouth Gaseous Diffusion Plant Duratek/Energy Solutions Babcox & Wilcox Technical Services Y-12 Plant Materials & Energy Corporation (M&EC) Perma-Fix Nuclear Fuels Services Wastren Advantage, Inc.

  17. Origin State>> CA ID ID IL IL KY NM NM NV NY OH TN TN TN, WA,

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    IL IL KY NM NM NV NY OH TN TN TN, WA, CA TN TN TN TN Total Shipments by Route Lawrence Livermore National Laboratory Batelle Energy Alliance Idaho National Laboratory Energx Argonne National Laboratory Argonne National Laboratory Paducah Gaseous Diffusion Plant Sandia National Laboratory Los Alamos National Laboratory National Security Technologies West Valley Environmental Services Portsmouth Gaseous Diffusion Plant Duratek/Energy Solutions Babcox & Wilcox Technical Services Y-12 Plant

  18. Broadband superluminescent diodes with bell-shaped spectra emitting in the range from 800 to 900 nm

    SciTech Connect (OSTI)

    Andreeva, E V; Il'ichenko, S N; Kostin, Yu O; Lapin, P I; Ladugin, M A; Marmalyuk, A A; Yakubovich, S D

    2013-08-31

    Quantum-well superluminescent diodes (SLD) with extremely thin active (AlGa)As and (InGa)As layers and centre wavelengths about 810, 840, 860 and 880 nm are experimentally studied. Their emission spectrum possesses the shape close to Gaussian, its FWHM being 30 – 60 nm depending on the length of the active channel and the level of pumping. Under cw injection, the output power of light-emitting modules based on such SLDs can amount to 1.0 – 25 mW at the output of a single-mode fibre. It is demonstrated that the operation lifetime of these devices exceeds 30000 hours. Based on the light-emitting modules the prototypes of combined BroadLighter series light sources are implemented having a bell-shaped spectrum with the width up to 100 nm. (optical radiation sources)

  19. Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition

    SciTech Connect (OSTI)

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhou, Shizhong; Lin, Zhiting; Li, Guoqiang

    2015-05-14

    AlN films with various thicknesses have been grown on Si(111) substrates by pulsed laser deposition (PLD). The surface morphology and structural property of the as-grown AlN films have been investigated carefully to comprehensively explore the epitaxial behavior. The ∼2 nm-thick AlN film initially grown on Si substrate exhibits an atomically flat surface with a root-mean-square surface roughness of 0.23 nm. As the thickness increases, AlN grains gradually grow larger, causing a relatively rough surface. The surface morphology of ∼120 nm-thick AlN film indicates that AlN islands coalesce together and eventually form AlN layers. The decreasing growth rate from 240 to 180 nm/h is a direct evidence that the growth mode of AlN films grown on Si substrates by PLD changes from the islands growth to the layer growth. The evolution of AlN films throughout the growth is studied deeply, and its corresponding growth mechanism is hence proposed. These results are instructional for the growth of high-quality nitride films on Si substrates by PLD, and of great interest for the fabrication of AlN-based devices.

  20. ALS Activity Reports

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Activity Reports Print These hard-copy annual reports were produced from 1993-2006. They illustrated the depth and breadth of the ALS scientific program with a selection of research results. They also summarized operations and ongoing R&D, highlighted educational outreach efforts and special events, and provided yearly documentation of the beamlines and publications. The Activity Report was replaced in 2007 by ALS Spectrum. The reports for 1996-2006 are available here. Activity Report

  1. ALS Communications Group

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Communications Group Print From left: Ashley White, Lori Tamura, and Keri Troutman. The ALS Communications staff maintain the ALS Web site; write and edit all print and electronic publications for the ALS, including Science Highlights, Science Briefs, brochures, handouts, and the monthly newsletter ALSNews; and create educational and scientific outreach materials. In addition, members of the group organize bi-monthly Science Cafés, create conference and workshop Web sites and publicity, and

  2. ALS Postdoctoral Fellowship Highlights

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Postdoctoral Fellowship Highlights Print Since its inception in 2005, the ALS Postdoctoral Fellowship program has supported young scientists in new and ongoing research projects at the ALS. In many cases, the postdoctoral fellows were also supported by collaborating institutions. These postdoc "highlights" -listed chronologically-feature a description of their projects while at the ALS, resulting publications, and their current positions and research activities. Name Year/Beamline

  3. ALS Users' Association Charter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Users' Executive Committee ALS Users' Association Charter Print The purpose of the Advanced Light Source Users' Association (ALSUA) is to provide an organized framework for the interaction between those who use the Advanced Light Source (ALS) at the Lawrence Berkeley Laboratory (LBL) for their research and the ALS management, as well as to provide a channel for communication with other synchrotron radiation laboratories and, on suitable occasions, with federal agencies. The ALSUA, representing

  4. ALS Beamlines Directory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Beamlines Directory ALS Beamlines Directory Print Monday, 31 August 2009 08:16 Beamlines, Parameters, Contact Information, and Schedules Click on the image to see/download a high-resolution version of the ALS beamclock. Beamline Parameters Beamline and endstation technical information is available through the links below. Unless otherwise noted, all beamlines are currently operational. Individual beamline schedules are posted when available. Please contact the responsible beamline scientist

  5. ALS Biosciences Crosscutting Review

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Biosciences Crosscutting Review ALS Biosciences Crosscutting Review Print by Steve Kevan and Corie Ralston The ALS organized and recently held a two-day crosscutting review of its bioscience programs. The ALS Scientific Advisory Committee (SAC) sponsors these reviews, which are intended to evaluate the performance of entire research subdisciplines served by the facility and to motivate strategic thinking about capabilities and research directions that are ripe for future development. SAC member

  6. ALS Communications Group

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Communications Group Print From left: Ashley White, Lori Tamura, and Keri Troutman. The ALS Communications staff maintain the ALS Web site; write and edit all print and electronic publications for the ALS, including Science Highlights, Science Briefs, brochures, handouts, and the monthly newsletter ALSNews; and create educational and scientific outreach materials. In addition, members of the group organize bi-monthly Science Cafés, create conference and workshop Web sites and publicity, and

  7. ALS Users' Association Charter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Users' Association Charter Print The purpose of the Advanced Light Source Users' Association (ALSUA) is to provide an organized framework for the interaction between those who use the Advanced Light Source (ALS) at the Lawrence Berkeley Laboratory (LBL) for their research and the ALS management, as well as to provide a channel for communication with other synchrotron radiation laboratories and, on suitable occasions, with federal agencies. The ALSUA, representing the research workers, will

  8. NM company wants to turn your windows into solar panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NM company wants to turn your windows into solar panels NM company wants to turn your windows into solar panels "There's an opportunity to generate electricity and power buildings with their windows" August 1, 2016 The UbiQD Team The UbiQD team celebrates the opening of its new quantum dot manufacturing facility in Los Alamos July 29. Contact Hunter McDaniel UbiQD Email UbiQD LLC, a quantum dot company, says it can turn windows into solar generators. "There's an opportunity to

  9. La Fonda on the Plaza, Santa Fe, NM: June 1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sequencing, Finishing, and Analysis in the Future (SFAF) La Fonda on the Plaza, Santa Fe, NM: June 1 st - 3 rd , 2016 Please join us for the 11 th annual "Sequencing, Finishing and Analysis in the Future" Meeting on Wednesday, June 1 st through June 3 rd in beautiful, historic Santa Fe, NM. The three-day SFAF conference will focus on Next Generation Sequencing technologies, applications, and their effect on the rapidly advancing field of Genomics. If you have any questions, or would

  10. Access to the ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS User Services Office and take safety training (see Complete Safety Training ) before ... the User Office in advance and have all their online forms completed before their arrival. ...

  11. 2013 ALS User Meeting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 ALS User Meeting banner Home Agenda Awards Exhibitors Lodging Posters Registration T-Shirt Contest Transportation Workshops Contact Us User Meeting Archives Users' Executive...

  12. 2013 ALS User Meeting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2013 ALS User Meeting Print banner Home Agenda Awards Exhibitors Lodging Posters Registration T-Shirt Contest Transportation Workshops Contact Us User Meeting Archives Users'...

  13. Final report on LDRD project : single-photon-sensitive imaging detector arrays at 1600 nm.

    SciTech Connect (OSTI)

    Childs, Kenton David; Serkland, Darwin Keith; Geib, Kent Martin; Hawkins, Samuel D.; Carroll, Malcolm S.; Klem, John Frederick; Sheng, Josephine Juin-Jye; Patel, Rupal K.; Bolles, Desta; Bauer, Tom M.; Koudelka, Robert

    2006-11-01

    The key need that this project has addressed is a short-wave infrared light detector for ranging (LIDAR) imaging at temperatures greater than 100K, as desired by nonproliferation and work for other customers. Several novel device structures to improve avalanche photodiodes (APDs) were fabricated to achieve the desired APD performance. A primary challenge to achieving high sensitivity APDs at 1550 nm is that the small band-gap materials (e.g., InGaAs or Ge) necessary to detect low-energy photons exhibit higher dark counts and higher multiplication noise compared to materials like silicon. To overcome these historical problems APDs were designed and fabricated using separate absorption and multiplication (SAM) regions. The absorption regions used (InGaAs or Ge) to leverage these materials 1550 nm sensitivity. Geiger mode detection was chosen to circumvent gain noise issues in the III-V and Ge multiplication regions, while a novel Ge/Si device was built to examine the utility of transferring photoelectrons in a silicon multiplication region. Silicon is known to have very good analog and GM multiplication properties. The proposed devices represented a high-risk for high-reward approach. Therefore one primary goal of this work was to experimentally resolve uncertainty about the novel APD structures. This work specifically examined three different designs. An InGaAs/InAlAs Geiger mode (GM) structure was proposed for the superior multiplication properties of the InAlAs. The hypothesis to be tested in this structure was whether InAlAs really presented an advantage in GM. A Ge/Si SAM was proposed representing the best possible multiplication material (i.e., silicon), however, significant uncertainty existed about both the Ge material quality and the ability to transfer photoelectrons across the Ge/Si interface. Finally a third pure germanium GM structure was proposed because bulk germanium has been reported to have better dark count properties. However, significant

  14. Optically pumped cerium-doped LiSrAlF.sub.6 and LiCaAlF.sub.6

    DOE Patents [OSTI]

    Marshall, Christopher D.; Payne, Stephen A.; Krupke, William F.

    1996-01-01

    Ce.sup.3+ -doped LiSrAlF.sub.6 crystals are pumped by ultraviolet light which is polarized along the c axis of the crystals to effectively energize the laser system. In one embodiment, the polarized fourth harmonic light output from a conventional Nd:YAG laser operating at 266 nm is arranged to pump Ce:LiSrAlF.sub.6 with the pump light polarized along the c axis of the crystal. The Ce:LiSrAlF.sub.6 crystal may be placed in a laser cavity for generating tunable coherent ultraviolet radiation in the range of 280-320 nm. Additionally, Ce-doped crystals possessing the LiSrAlF.sub.6 type of chemical formula, e.g. Ce-doped LiCaAlF.sub.6 and LiSrGaF.sub.6, can be used. Alternative pump sources include an ultraviolet-capable krypton or argon laser, or ultraviolet emitting flashlamps. The polarization of the pump light will impact operation. The laser system will operate efficiently when light in the 280-320 nm gain region is injected or recirculated in the system such that the beam is also polarized along the c axis of the crystal. The Ce:LiSrAlF.sub.6 laser system can be configured to generate ultrashort pulses, and it may be used to pump other devices, such as an optical parametric oscillator.

  15. Optically pumped cerium-doped LiSrAlF{sub 6} and LiCaAlF{sub 6}

    DOE Patents [OSTI]

    Marshall, C.D.; Payne, S.A.; Krupke, W.F.

    1996-05-14

    Ce{sup 3+}-doped LiSrAlF{sub 6} crystals are pumped by ultraviolet light which is polarized along the c axis of the crystals to effectively energize the laser system. In one embodiment, the polarized fourth harmonic light output from a conventional Nd:YAG laser operating at 266 nm is arranged to pump Ce:LiSrAlF{sub 6} with the pump light polarized along the c axis of the crystal. The Ce:LiSrAlF{sub 6} crystal may be placed in a laser cavity for generating tunable coherent ultraviolet radiation in the range of 280-320 nm. Additionally, Ce-doped crystals possessing the LiSrAlF{sub 6} type of chemical formula, e.g. Ce-doped LiCaAlF{sub 6} and LiSrGaF{sub 6}, can be used. Alternative pump sources include an ultraviolet-capable krypton or argon laser, or ultraviolet emitting flashlamps. The polarization of the pump light will impact operation. The laser system will operate efficiently when light in the 280-320 nm gain region is injected or recirculated in the system such that the beam is also polarized along the c axis of the crystal. The Ce:LiSrAlF{sub 6} laser system can be configured to generate ultrashort pulses, and it may be used to pump other devices, such as an optical parametric oscillator. 10 figs.

  16. DOE - Office of Legacy Management -- TA-1 Manhattan Laboratory - NM 11

    Office of Legacy Management (LM)

    TA-1 Manhattan Laboratory - NM 11 FUSRAP Considered Sites Site: TA-1 MANHATTAN LABORATORY (NM.11 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: Main Technical Area LASL LANL NM.11-1 NM.11-2 NM.11-3 Location: Los Alamos , New Mexico NM.11-3 Evaluation Year: 1985 NM.11-1 Site Operations: Nuclear weapons research and development. NM.11-1 NM.11-3 Site Disposition: Site Disposition NM.11-1 Radioactive Materials Handled: Yes Primary Radioactive Materials

  17. EUV optical design for 100 nm CD imaging system

    SciTech Connect (OSTI)

    Sweeney, D.W.; Hudyma, R.; Chapman, H.B.; Shafer, D.

    1998-04-09

    The imaging specifications for extreme ultraviolet lithography (EUVL) projection optics parallel those of other optical lithographies. Specifications are scaled to reflect the 100 nm critical dimension for the first generation EUVL systems. The design being fabricated for the Engineering Test Stand, an EUVL alpha tool, consists of a condenser with six channels to provide an effective partial coherence factor of 0.7. The camera contains four mirrors; three of the mirrors are aspheres and the fourth is spherical. The design of the optical package has been constrained so that the angles of incidence and the variations in the angle of incidence of all rays allow for uniform multilayer coatings. The multilayers introduce a slight shift in image position and magnification. We have shown that a system aligned with visible light is also aligned at 13.4 nm. Each mirror must be fabricated with an RMS figure error of less than 0.25 nm and better than 0.2 nm RMS roughness. Optical surfaces that exceed each of these specifications individually have been fabricated. The success of EUVL requires that these specifications be met simultaneously.

  18. Cryogenic Lifetime Studies of 130 nm and 65 nm CMOS Technologies for High-Energy Physics Experiments

    SciTech Connect (OSTI)

    Hoff, James R.; Deptuch, G. W.; Wu, Guoying; Gui, Ping

    2015-03-09

    The Long Baseline Neutrino Facility intends to use unprecedented volumes of liquid argon to fill a time projection chamber in an underground facility. Research is under way to place the electronics inside the cryostat. For reasons of efficiency and economics, the lifetimes of these circuits must be well in excess of 20 years. The principle mechanism for lifetime degradation of MOSFET devices and circuits operating at cryogenic temperatures is hot carrier degradation. Choosing a process technology that is, as much as possible, immune to such degradation and developing design techniques to avoid exposure to such damage are the goals. This, then, requires careful investigation and a basic understanding of the mechanisms that underlie hot carrier degradation and the secondary effects they cause in circuits. In this work, commercially available 130 nm and 65 nm nMOS transistors operating at cryogenic temperatures are investigated. Our results show that both technologies achieve the lifetimes required by the experiment. Minimal design changes are necessary in the case of the 130 nm process and no changes whatsoever are necessary for the 65 nm process.

  19. Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates

    SciTech Connect (OSTI)

    Smalc-Koziorowska, Julita; Sawicka, Marta; Skierbiszewski, Czeslaw; Grzegory, Izabella

    2011-08-08

    We study the mismatch relaxation of 2-5 nm thin elongated AlN islands formed during growth of AlGaN on bulk m-plane GaN by molecular beam epitaxy. The relaxation of these m-plane AlN layers is anisotropic and occurs through the introduction of stacking faults in [0001] planes during island coalescence, while no relaxation is observed along the perpendicular [1120] direction. This anisotropy in the mismatch relaxation and the formation of stacking faults in the AlN islands are explained by the growth mode of the AlN platelets and their coalescence along the [0001] direction.

  20. Disordered crystal structure of 20H-AlON, Al{sub 10}O{sub 3}N{sub 8}

    SciTech Connect (OSTI)

    Banno, Hiroki; Funahashi, Shiro; Asaka, Toru; Hirosaki, Naoto; Fukuda, Koichiro

    2015-10-15

    The disordered crystal structure of 20H-AlON (Al{sub 10}O{sub 3}N{sub 8}) was determined by combined use of X-ray powder diffraction and transmission electron microscopy. The title compound is hexagonal with space group P6{sub 3}/mmc (Z=2) and the unit-cell dimensions are a=0.307082(5) nm, c=5.29447(8) nm and V=0.432376(12) nm{sup 3}. The structural model showed the positional disordering of three of the six Al sites in the unit cell. The reliability indices calculated from the Rietveld method were R{sub wp}=6.97%, S (=R{sub wp}/R{sub e})=1.68, R{sub p}=5.45%, R{sub B}=5.13% and R{sub F}=4.56%. We interpreted the disordered structure of 20H-AlON as a statistical average of six different types of ordered structural configurations, which are composed of an octahedral [Al(O, N){sub 6}] layer and tetrahedral [Al(O, N){sub 4}] layers. We demonstrated the high correlations between the hexagonal unit-cell dimensions and the octahedral layer concentrations for AlON and SiAlON polytypoids. - Graphical abstract: Variations of a and c/(n{sub O}+n{sub T}) with n{sub O}/(n{sub O}+n{sub T}). The a and c are the hexagonal unit-cell dimensions of AlON, SiAlON and AlN. The n{sub O} and n{sub T} are, respectively, the numbers of octahedral and tetrahedral layers in the unit cells. The unit-cell dimensions in literature are plotted in black plus for AlON and black cross for SiAlON. The unit-cell dimensions of AlN are a=0.3110 nm and c=0.4980 nm. - Highlights: • Crystal structure of Al10O3N8 is determined by laboratory X-ray powder diffraction. • The atom arrangements are represented by the split-atom model. • Six types of ordered atom arrangements are derived from the disordered structure. • Hexagonal unit-cell dimensions changed systematically for AlON and SiAlON compounds.

  1. Sandia, the Atlantic Council, and NM Water Resource Research Institute

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sponsor Roundtable on Western Water Scarcity the Atlantic Council, and NM Water Resource Research Institute Sponsor Roundtable on Western Water Scarcity - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy

  2. NNSA administrator shows NM congressional delegation the Albuquerque

    National Nuclear Security Administration (NNSA)

    Complex to make case for new facility | National Nuclear Security Administration | (NNSA) administrator shows NM congressional delegation the Albuquerque Complex to make case for new facility Friday, February 26, 2016 - 1:42pm WASHINGTON, DC - Lt. Gen. Frank Klotz (Ret.), Administrator of the Department of Energy's National Nuclear Security Administration, hosted two members of the New Mexico congressional delegation on Feb. 18 for a tour of the aging facilities occupied by 1,200 NNSA

  3. Photoelectron Emission Studies in CsBr at 257 nm

    SciTech Connect (OSTI)

    Maldonado, Juan R.; Liu, Zhi; Sun, Yun; Pianetta, Piero A.; Pease, Fabian W.; /Stanford U., Elect. Eng. Dept. /SLAC, SSRL

    2006-09-28

    CsBr/Cr photocathodes were found [1,2] to meet the requirements of a multi-electron beam lithography system operating with a light energy of 4.8 eV (257nm). The fact that photoemission was observed with a light energy below the reported 7.3 eV band gap for CsBr was not understood. This paper presents experimental results on the presence of intra-band gap absorption sites (IBAS) in CsBr thin film photo electron emitters, and presents a model based on IBAS to explain the observed photoelectron emission behavior at energies below band gap. A fluorescence band centered at 330 nm with a FWHM of about 0.34 eV was observed in CsBr/Cr samples under 257 nm laser illumination which can be attributed to IBAS and agrees well with previously obtained synchrotron photoelectron spectra[1] from the valence band of CsBr films.

  4. Access to the ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    are required to register with the ALS User Services Office and take safety training (see Complete Safety Training ) before they are issued a Berkeley Lab ID badge and granted...

  5. ALS in the News

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the ALS is well represented) New Lithium-Ion Battery Discovery Contradicts ... of water-no deeper than a few molecules-to the surface of a barium fluoride crystal. ...

  6. ALS Staff Photo

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    On May 14, 2013, members of ALS staff posed for a group photo in front of the dome. A hi-res version can be downloaded here. The last staff photo was taken in 2006. 2013 staff...

  7. ALS Communications Group

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    organize bi-monthly Science Cafs, create conference and workshop Web sites and publicity, and coordinate ALS participation in Lab-wide events such as the Berkeley Lab Open...

  8. ALS Users' Association Charter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    facility. Thorough discussion with users of current projects, as well as plans for the future, will place ALS management in a better position to evaluate the needs of users and...

  9. ALS Activity Reports

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Activity Reports Print These hard-copy annual reports were produced from 1993-2006. They illustrated the depth and breadth of the ALS scientific program with a selection of research results. They also summarized operations and ongoing R&D, highlighted educational outreach efforts and special events, and provided yearly documentation of the beamlines and publications. The Activity Report was replaced in 2007 by ALS Spectrum. The reports for 1996-2006 are available here. Activity Report 2006

  10. ALS Beamlines Directory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Beamlines Directory Print Beamlines, Parameters, Contact Information, and Schedules Click on the image to see/download a high-resolution version of the ALS beamclock. Beamline Parameters Beamline and endstation technical information is available through the links below. Unless otherwise noted, all beamlines are currently operational. Individual beamline schedules are posted when available. Please contact the responsible beamline scientist for additional schedule information. When calling

  11. ALS in the News

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in the News Print Recent Articles Featuring ALS Staff and Science 2015 February New Video: Berkeley Lab's "Who We Are" Grants Give Particle Accelerator Technologies a Boost Details on Presidential Budget Request for DOE R&D DOE Scientists Team up to Demonstrate Scientific Potential of Big Data Infrastructure January Timeline Chronicles Lab's Science Highlights in 2014 (...and the ALS is well represented!) New Lithium-Ion Battery Discovery Contradicts Everything You Thought You Knew

  12. ALS Activity Reports

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Activity Reports Print These hard-copy annual reports were produced from 1993-2006. They illustrated the depth and breadth of the ALS scientific program with a selection of research results. They also summarized operations and ongoing R&D, highlighted educational outreach efforts and special events, and provided yearly documentation of the beamlines and publications. The Activity Report was replaced in 2007 by ALS Spectrum. The reports for 1996-2006 are available here. Activity Report 2006

  13. ALS Activity Reports

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Activity Reports Print These hard-copy annual reports were produced from 1993-2006. They illustrated the depth and breadth of the ALS scientific program with a selection of research results. They also summarized operations and ongoing R&D, highlighted educational outreach efforts and special events, and provided yearly documentation of the beamlines and publications. The Activity Report was replaced in 2007 by ALS Spectrum. The reports for 1996-2006 are available here. Activity Report 2006

  14. ALS Beamlines Directory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Beamlines Directory Print Beamlines, Parameters, Contact Information, and Schedules Click on the image to see/download a high-resolution version of the ALS beamclock. Beamline Parameters Beamline and endstation technical information is available through the links below. Unless otherwise noted, all beamlines are currently operational. Individual beamline schedules are posted when available. Please contact the responsible beamline scientist for additional schedule information. When calling

  15. ALS Beamlines Directory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Beamlines Directory Print Beamlines, Parameters, Contact Information, and Schedules Click on the image to see/download a high-resolution version of the ALS beamclock. Beamline Parameters Beamline and endstation technical information is available through the links below. Unless otherwise noted, all beamlines are currently operational. Individual beamline schedules are posted when available. Please contact the responsible beamline scientist for additional schedule information. When calling

  16. ALS User Meeting Archives

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS User Meeting Archives Print Past User Meeting Programs, Workshops, and Awards Year David A. Shirley (Science) Klaus Halbach (Instrumentation) Tim Renner (Service) 2015 Program Workshops Wanli Yang, "For new concepts optimizing battery materials with the aid of soft x-ray microscopy." Hans Bechtel, Michael Martin, and Markus Raschke, "For the development of Synchrotron Infrared Nano Spectroscopy (SINS)." David Malone. "As the first person all 2400 ALS users contact

  17. ALS Users' Association Charter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Users' Association Charter Print The purpose of the Advanced Light Source Users' Association (ALSUA) is to provide an organized framework for the interaction between those who use the Advanced Light Source (ALS) at the Lawrence Berkeley Laboratory (LBL) for their research and the ALS management, as well as to provide a channel for communication with other synchrotron radiation laboratories and, on suitable occasions, with federal agencies. The ALSUA, representing the research workers, will be in

  18. ALS Users' Association Charter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Users' Association Charter Print The purpose of the Advanced Light Source Users' Association (ALSUA) is to provide an organized framework for the interaction between those who use the Advanced Light Source (ALS) at the Lawrence Berkeley Laboratory (LBL) for their research and the ALS management, as well as to provide a channel for communication with other synchrotron radiation laboratories and, on suitable occasions, with federal agencies. The ALSUA, representing the research workers, will be in

  19. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

    SciTech Connect (OSTI)

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramn; Mita, Seiji; Tweedie, James

    2015-06-08

    Since the band ordering in AlGaN has a profound effect on the performance of UVC light emitting diodes (LEDs) and even determines the feasibility of surface emitting lasers, the polarization properties of emitted light from c-oriented AlGaN and AlGaN-based laser structures were studied over the whole composition range, as well as various strain states, quantum confinements, and carrier densities. A quantitative relationship between the theoretical valence band separation, determined using kp theory, and the experimentally measured degree of polarization is presented. Next to composition, strain was found to have the largest influence on the degree of polarization while all other factors were practically insignificant. The lowest crossover point from the transverse electric to transverse magnetic polarized emission of 245?nm was found for structures pseudomorphically grown on AlN substrates. This finding has significant implications toward the efficiency and feasibility of surface emitting devices below this wavelength.

  20. In situ nanoindentation study of plastic Co-deformation in Al-TiN nanocomposites

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, N.; Wang, H.; Misra, A.; Wang, J.

    2014-10-16

    We performed in situ indentation in a transmission electron microscope on Al-TiN multilayers with individual layer thicknesses of 50 nm, 5 nm and 2.7 nm to explore the effect of length scales on the plastic co-deformability of a metal and a ceramic. At 50 nm, plasticity was confined to the Al layers with easy initiation of cracks in the TiN layers. At 5 nm and below, cracking in TiN was suppressed and post mortem measurements indicated a reduction in layer thickness in both layers. Our results demonstrate the profound size effect in enhancing plastic co-deformability in nanoscale metal-ceramic multilayers.

  1. AL2007-08.doc

    Broader source: Energy.gov (indexed) [DOE]

    Assessment Tool, IEEE Standard 1680-2006 for Environmental Assessment of Personal Computer Products. When is this Acquisition Letter (AL) Effective? This AL is effective...

  2. 2012 ALS User Meeting Awards

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2012 ALS User Meeting Awards Print Recipients of the 2012 Users' Executive Committee awards and Student Poster Competition were announced Tuesday, October 9, at the ALS User...

  3. 2012 ALS User Meeting Awards

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2 ALS User Meeting Awards Recipients of the 2012 Users' Executive Committee awards and Student Poster Competition were announced Tuesday, October 9, at the ALS User Meeting. David...

  4. AL PRO | Open Energy Information

    Open Energy Info (EERE)

    search Name: AL-PRO Place: Grossheide, Lower Saxony, Germany Zip: 26532 Sector: Wind energy Product: AL-PRO is an inndependent expert office for wind forecasts, wind...

  5. Science DMZ for ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Science Engagement Move your data Programs & Workshops Science Requirements Reviews Case Studies OSCARS Case Studies Science DMZ Case Studies Science DMZ @ UF Science DMZ @ CU Science DMZ @ Penn & VTTI Science DMZ @ NOAA Science DMZ @ NERSC Science DMZ @ ALS Multi-facility Workflow Case Study Contact Us Technical Assistance: 1 800-33-ESnet (Inside US) 1 800-333-7638 (Inside US) 1 510-486-7600 (Globally) 1 510-486-7607 (Globally) Report Network Problems: trouble@es.net Provide Web

  6. ALS Staff Photo

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Staff Photo Print On May 14, 2013, members of ALS staff posed for a group photo in front of the dome. A hi-res version can be downloaded here. The last staff photo was taken in 2006. 2013 staff photo

  7. Pollution Prevention Opportunity Assessment for the SNL/NM cafeterias.

    SciTech Connect (OSTI)

    McCord, Samuel Adam

    2005-12-01

    This Pollution Prevention Opportunity Assessment (PPOA) was conducted for the two Sandia National Laboratories/New Mexico cafeteria facilities between May and August 2005. The primary purpose of this PPOA is to assess waste and resource reduction opportunities and issue Pollution Prevention (P2) recommendations for Sandia's food service facilities. This PPOA contains recommendations for energy, water and resource reduction, as well as material substitution based upon environmentally preferable purchasing. Division 3000 has requested the PPOA report as part of the Division's compliance effort to implement the Environmental Management System (EMS) per DOE Order 450.1. This report contains a summary of the information collected and analyses performed with recommended options for implementation. The SNL/NM P2 Group will work with Division 3000 and the respective cafeteria facilities to implement these options.

  8. ALS Collaborative Postdoctoral Fellowship Program

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Collaborative Postdoctoral Fellowship Program ALS Collaborative Postdoctoral Fellowship Program Print Monday, 19 July 2010 15:13 The Advanced Light Source (ALS) Collaborative Postdoctoral Fellowship program provides challenging opportunities to conduct research and instrument development in areas supporting the scientific programs of the Department of Energy (DOE), Lawrence Berkeley National Laboratory (LBNL), and the ALS that include physical, chemical, material, energy, environmental,

  9. ALS Holds Annual Safety Day

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Holds Annual Safety Day ALS Holds Annual Safety Day Print by Scott Taylor, ALS Safety Manager Andrew Doran cleans equipment housing at Beamline 12.2.2. The ALS held its annual safety day on Monday, June 13 for all ALS and associated staff. The day started with an all-hands meeting, beginning with presentations by ALS Director Roger Falcone and LBNL Environmental Health and Safety Division Director (and former ALS Safety Manager) Jim Floyd. Both discussed the importance of the incorporation

  10. DOE - Office of Legacy Management -- LASL Tracks Eastern Area No 3 - NM 10

    Office of Legacy Management (LM)

    Tracks Eastern Area No 3 - NM 10 FUSRAP Considered Sites Site: LASL TRACKS EASTERN AREA NO. 3 (NM.10 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Area No. 3 , Los Alamos County , New Mexico NM.10-1 Evaluation Year: 1987 NM.10-2 Site Operations: These tracts were part of LASL and were subject to contamination from laboratory operations. NM.10-2 Site Disposition: Eliminated - Radiation levels below criteria per environmental radiation

  11. The photodissociation of oxetane at 193 nm as the reverse of the Paterno-Buchi reaction

    SciTech Connect (OSTI)

    Lee, Shih-Huang

    2009-12-14

    We investigated the photodissociation of oxetane (1,3-trimethylene oxide) at 193.3 nm in a molecular-beam apparatus using photofragment-translational spectroscopy and selective photoionization. We measured time-of-flight (TOF) spectra and angular anisotropy parameters {beta}(t) as a function of flight time of products at m/z=26-30 u utilizing photoionization energies from 9.8 to 14.8 eV. The TOF distributions of the products alter greatly with the employed photon energy, whereas their {beta}(t) distributions are insensitive to the photon energy. Dissociation to H{sub 2}CO+C{sub 2}H{sub 4} is the major channel in the title reaction. Three distinct dissociation paths with branching ratios 0.923:0.058:0.019 are responsible for the three features observed in the distribution of kinetic energy released in the channel H{sub 2}CO+C{sub 2}H{sub 4}. The observation of H{sub 2} and H atoms, {approx}1% in branching, indicates that products H{sub 2}CO and C{sub 2}H{sub 4} spontaneously decompose to only a small extent. Most HCO, C{sub 2}H{sub 3}, and C{sub 2}H{sub 2} ions originate from dissociative photoionization of products H{sub 2}CO and C{sub 2}H{sub 4}. Except atomic H and H{sub 2}, the photoproducts have large angular anisotropies, {beta}{>=}-0.8, which reflects rapid dissociation of oxetane following optical excitation at 193.3 nm. The mechanisms of dissociation of oxetane are addressed. Our results confirm the quantum-chemical calculations of Palmer et al. and provide profound insight into the Paterno-Buchi reaction.

  12. ALS Beamlines Directory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Beamlines Directory Print Beamlines, Parameters, Contact Information, and Schedules Click on the image to see/download a high-resolution version of the ALS beamclock. Beamline Parameters Beamline and endstation technical information is available through the links below. Unless otherwise noted, all beamlines are currently operational. Individual beamline schedules are posted when available. Please contact the responsible beamline scientist for additional schedule information. When calling from

  13. ALS User Meeting Archives

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Meeting Archives Past User Meeting Programs, Workshops, and Awards Year David A. Shirley (Science) Klaus Halbach (Instrumentation) Tim Renner (Service) 2015 Program Workshops Wanli Yang, "For new concepts optimizing battery materials with the aid of soft x-ray microscopy." Hans Bechtel, Michael Martin, and Markus Raschke, "For the development of Synchrotron Infrared Nano Spectroscopy (SINS)." David Malone. "As the first person all 2400 ALS users contact for their beam

  14. Microstructure of compositionally modulated InAlAs

    SciTech Connect (OSTI)

    Twesten, R.D.; Millunchick, J.M.; Lee, S.R.; Follstaedt, D.M.; Jones, E.D.; Ahrenkiel, S.P.; Zhang, Y.; Mascarenhas, A.

    1996-12-31

    The authors have observed spontaneous, lateral composition modulation in tensile InAlAs alloy films grown as short-period superlattices on InP (001). They have analyzed these films using transmission electron microscopy, x-ray reciprocal space mapping, and polarized photoluminescence spectroscopy. They find the growth front is nonplanar, exhibiting {approximately} 2 nm deep cusps aligned with the In-rich regions of the compositionally modulated films. In addition to the measured 15 nm wavelength modulation in the [110] direction, a modulation of 30 nm wavelength is seen in the orthogonal [1{bar 1}0] direction. The photoluminescence from the modulated layer is strongly polarized and red shifted by 0.22 eV.

  15. FY09 assessment of mercury reduction at SNL/NM.

    SciTech Connect (OSTI)

    McCord, Samuel Adam

    2010-02-01

    This assessment takes the result of the FY08 performance target baseline of mercury at Sandia National Laboratories/New Mexico, and records the steps taken in FY09 to collect additional data, encourage the voluntary reduction of mercury, and measure success. Elemental (metallic) mercury and all of its compounds are toxic, and exposure to excessive levels can permanently damage or fatally injure the brain and kidneys. Elemental mercury can also be absorbed through the skin and cause allergic reactions. Ingestion of inorganic mercury compounds can cause severe renal and gastrointestinal damage. Organic compounds of mercury such as methyl mercury, created when elemental mercury enters the environment, are considered the most toxic forms of the element. Exposures to very small amounts of these compounds can result in devastating neurological damage and death.1 SNL/NM is required to report annually on the site wide inventory of mercury for the Environmental Protection Agency's (EPA) Toxics Release Inventory (TRI) Program, as the site's inventory is excess of the ten pound reportable threshold quantity. In the fiscal year 2008 (FY08) Pollution Prevention Program Plan, Section 5.3 Reduction of Environmental Releases, a performance target stated was to establish a baseline of mercury, its principle uses, and annual quantity or inventory. This was accomplished on July 29, 2008 by recording the current status of mercury in the Chemical Information System (CIS).

  16. Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

    SciTech Connect (OSTI)

    Himwas, C.; Songmuang, R.; Le Si Dang; Bleuse, J.; Monroy, E.; Rapenne, L.; Sarigiannidou, E.

    2012-12-10

    We report on the structural and optical properties of AlGaN/AlN quantum dot (QD) superlattices synthesized by plasma-assisted molecular-beam epitaxy. Modifying the composition and geometry of the QDs, the peak emission wavelength can be shifted from 320 nm to 235 nm while keeping the internal quantum efficiency larger than 30%. The efficient carrier confinement is confirmed by the stability of the photoluminescence (PL) intensity and decay time, from low temperature up to 100 K. Above this threshold, the PL intensity decreases and the radiative lifetime increases due to carrier thermalization. We also identified the intraband electronic transition between the ground level of the conduction band and the first excited state confined along the growth axis (s-p{sub z}).

  17. Optical emission from a small scale model electric arc furnace in 250-600 nm region

    SciTech Connect (OSTI)

    Maekinen, A.; Tikkala, H.; Aksela, H.; Niskanen, J.

    2013-04-15

    Optical emission spectroscopy has been for long proposed for monitoring and studying industrial steel making processes. Whereas the radiative decay of thermal excitations is always taking place in high temperatures needed in steel production, one of the most promising environment for such studies are electric arc furnaces, creating plasma in excited electronic states that relax with intense characteristic emission in the optical regime. Unfortunately, large industrial scale electric arc furnaces also present a challenging environment for optical emission studies and application of the method is not straightforward. To study the usability of optical emission spectroscopy in real electric arc furnaces, we have developed a laboratory scale DC electric arc furnace presented in this paper. With the setup, optical emission spectra of Fe, Cr, Cr{sub 2}O{sub 3}, Ni, SiO{sub 2}, Al{sub 2}O{sub 3}, CaO, and MgO were recorded in the wavelength range 250-600 nm and the results were analyzed with the help of reference data. The work demonstrates that using characteristic optical emission, obtaining in situ chemical information from oscillating plasma of electric arc furnaces is indeed possible. In spite of complications, the method could possibly be applied to industrial scale steel making process in order to improve its efficiency.

  18. Ion Exclusion by Sub 2-nm Carbon Nanotube Pores

    SciTech Connect (OSTI)

    Fornasiero, F; Park, H G; Holt, J K; Stadermann, M; Grigoropoulos, C P; Noy, A; Bakajin, O

    2008-04-09

    Carbon nanotubes offer an outstanding platform for studying molecular transport at nanoscale, and have become promising materials for nanofluidics and membrane technology due to their unique combination of physical, chemical, mechanical, and electronic properties. In particular, both simulations and experiments have proved that fluid flow through carbon nanotubes of nanometer size diameter is exceptionally fast compared to what continuum hydrodynamic theories would predict when applied on this length scale, and also, compared to conventional membranes with pores of similar size, such as zeolites. For a variety of applications such as separation technology, molecular sensing, drug delivery, and biomimetics, selectivity is required together with fast flow. In particular, for water desalination, coupling the enhancement of the water flux with selective ion transport could drastically reduce the cost of brackish and seawater desalting. In this work, we study the ion selectivity of membranes made of aligned double-walled carbon nanotubes with sub-2 nm diameter. Negatively charged groups are introduced at the opening of the carbon nanotubes by oxygen plasma treatment. Reverse osmosis experiments coupled with capillary electrophoresis analysis of permeate and feed show significant anion and cation rejection. Ion exclusion declines by increasing ionic strength (concentration) of the feed and by lowering solution pH; also, the highest rejection is observed for the A{sub m}{sup Z{sub A}} C{sub n}{sup Z{sub C}} salts (A=anion, C=cation, z= valence) with the greatest Z{sub A}/Z{sub C} ratio. Our results strongly support a Donnan-type rejection mechanism, dominated by electrostatic interactions between fixed membrane charges and mobile ions, while steric and hydrodynamic effects appear to be less important. Comparison with commercial nanofiltration membranes for water softening reveals that our carbon nanotube membranes provides far superior water fluxes for similar ion

  19. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

    SciTech Connect (OSTI)

    Bryan, Zachary Bryan, Isaac; Sitar, Zlatko; Collazo, Ramn; Xie, Jinqiao; Mita, Seiji

    2015-04-06

    The internal quantum efficiency (IQE) of Al{sub 0.55}Ga{sub 0.45}N/AlN and Al{sub 0.55}Ga{sub 0.45}N/Al{sub 0.85}Ga{sub 0.15}N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to undoubtedly distinguish the effect of growth conditions, such as V/III ratio, on the optical quality of AlGaN based MQWs from the influence of dislocations. At a high V/III ratio, a record high IQE of ?80% at a carrier density of 10{sup 18?}cm{sup ?3} was achieved at ?258?nm. The high IQE was correlated with the decrease of the non-radiative coefficient A and a reduction of midgap defect luminescence, all suggesting that, in addition to dislocations, point defects are another major factor that strongly influences optical quality of AlGaN MQW structures.

  20. ALS Doctoral Fellowship in Residence

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Doctoral Fellowship in Residence ALS Doctoral Fellowship in Residence Print Monday, 26 July 2010 09:21 The Advanced Light Source (ALS), a division of Lawrence Berkeley National Laboratory, is a national user facility that generates intense x-ray radiation for scientific and technological research. As the world's first third-generation synchrotron radiation source, the ALS offers outstanding performance in the VUV-soft x-ray energy range and excellent performance into the hard x-ray region.

  1. Double patterning HSQ processes of zone plates for 10 nm diffraction...

    Office of Scientific and Technical Information (OSTI)

    ... Using the new process, we successfully realized zone plates of 10 nm and 12 nm outermost zones. Fig. 3 shows the SEM micrographs of the zone plates outer regions. The zone plates ...

  2. New Zone Plate for Soft X-Ray Microscopy at 15-nm Spatial Resolution

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Zone Plate for Soft X-Ray Microscopy at 15-nm Spatial Resolution New Zone Plate for Soft X-Ray Microscopy at 15-nm Spatial Resolution Print Wednesday, 31 August 2005 00:00 ...

  3. NM Stat. 62-11 - Review of Commission Orders | Open Energy Information

    Open Energy Info (EERE)

    NM Stat. 62-11 - Review of Commission Orders Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- StatuteStatute: NM Stat. 62-11 - Review of...

  4. Transport of triplet excitons along continuous 100 nm polyfluorene chains

    SciTech Connect (OSTI)

    Xi, Liang; Bird, Matthew; Mauro, Gina; Asaoka, Sadayuki; Cook, Andrew R.; Chen, Hung -Cheng; Miller, John R.

    2014-12-03

    Triplet excitons created in poly-2,7-(9,9-dihexyl)fluorene (pF) chains with end trap groups in solution are efficiently transported to and captured by the end groups. The triplets explore the entire lengths of the chains, even for ~100 nm long chains enabling determination of the completeness of end capping. The results show that the chains continuous: they may contain transient barriers or traps, such as those from fluctuations of dihedral angles, but are free of major defects that stop motion of the triplets. Quantitative determinations are aided by the addition of a strong electron donor, TMPD, which removes absorption bands of the end-trapped triplets. For chains having at least one end trap, triplet capture is quantitative on the 1 s timescale imposed by the use of the donor. Fractions of chains having no end traps were 0.15 for pF samples with anthraquinone (AQ) end traps and 0.063 with naphthylimide (NI) end traps. These determinations agreed with measurements by NMR for short (<40 polymer repeat units (PRU)) chains, where NMR determinations are accurate. The results find no evidence for traps or barriers to transport of triplets, and places limits on the possible presence of defects as impenetrable barriers to less than one per 300 PRU. The present results present a paradigm different from the current consensus, derived from observations of singlet excitons, that conjugated chains are divided into segments, perhaps by some kind of defects. For the present pF chains, the segmentation either does not apply to triplet excitons or is transient so that the defects are healed or surmounted in times much shorter than 1 s. Triplets on chains without end trap groups transfer to chains with end traps on a slower time scale. Rate constants for these bimolecular triplet transfer reactions were found to increase with the length of the accepting chain, as did rate constants for triplet transfer to the chains from small molecules like biphenyl. As a result, a second

  5. Transport of triplet excitons along continuous 100 nm polyfluorene chains

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xi, Liang; Bird, Matthew; Mauro, Gina; Asaoka, Sadayuki; Cook, Andrew R.; Chen, Hung -Cheng; Miller, John R.

    2014-12-03

    Triplet excitons created in poly-2,7-(9,9-dihexyl)fluorene (pF) chains with end trap groups in solution are efficiently transported to and captured by the end groups. The triplets explore the entire lengths of the chains, even for ~100 nm long chains enabling determination of the completeness of end capping. The results show that the chains continuous: they may contain transient barriers or traps, such as those from fluctuations of dihedral angles, but are free of major defects that stop motion of the triplets. Quantitative determinations are aided by the addition of a strong electron donor, TMPD, which removes absorption bands of the end-trappedmore » triplets. For chains having at least one end trap, triplet capture is quantitative on the 1 µs timescale imposed by the use of the donor. Fractions of chains having no end traps were 0.15 for pF samples with anthraquinone (AQ) end traps and 0.063 with naphthylimide (NI) end traps. These determinations agreed with measurements by NMR for short (<40 polymer repeat units (PRU)) chains, where NMR determinations are accurate. The results find no evidence for traps or barriers to transport of triplets, and places limits on the possible presence of defects as impenetrable barriers to less than one per 300 PRU. The present results present a paradigm different from the current consensus, derived from observations of singlet excitons, that conjugated chains are divided into “segments,” perhaps by some kind of defects. For the present pF chains, the segmentation either does not apply to triplet excitons or is transient so that the defects are healed or surmounted in times much shorter than 1 µs. Triplets on chains without end trap groups transfer to chains with end traps on a slower time scale. Rate constants for these bimolecular triplet transfer reactions were found to increase with the length of the accepting chain, as did rate constants for triplet transfer to the chains from small molecules like biphenyl. As a

  6. Morphological and photoluminescence study of chemically synthesized Al{sub 2}O{sub 3} polythiophene composite

    SciTech Connect (OSTI)

    Tripathi, Akhilesh Bahadur, Indra Shukla, R. K.

    2014-04-24

    Undoped and Al{sub 2}O{sub 3} doped Polythiophene were synthesized by chemical route method. All the samples were characterized by fourier transform infra-red spectroscopy. Scanning electron microscopy shows the formation of spherical like particles for Al{sub 2}O{sub 3} polythiophene composite and its size decreases continuously as Al{sub 2}O{sub 3} doping percentage increases. Photoluminescence spectra were recorded at excitation wavelength 325 nm. All the samples have mainly two visible peaks at 462 and 490 nm respectively. The PL of present sample may have several optoelectronic applications like organic light emitting diodes (OLEDs), and photovoltaic cell etc.

  7. DOE - Office of Legacy Management -- LASL Land Parcels A B C E K LN PL - NM

    Office of Legacy Management (LM)

    07 Land Parcels A B C E K LN PL - NM 07 Site ID (CSD Index Number): NM.09 Site Name: LOS ALAMOS LAND PARCELS A B C E K L N PIPELINE (NM.07) / LASL PIPELINE FACILITY (NM.08) / LASL TRACTS EASTERN AREA L Site Summary: These land parcels, previously owned by the federal government, were sold in 1972. The pipeline facility and eastern area L were identified separately in some documents and assigned individual numbers by FUSRAP researchers, but these parcels were included in NM.07. Site Link:

  8. Anisotropic swelling and microcracking of neutron irradiated Ti3AlC2-Ti5Al2C3 materials

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ang, Caen K.; Silva, Chinthaka M.; Shih, Chunghao Phillip; Koyanagi, Takaaki; Katoh, Yutai; Zinkle, Steven J.

    2015-12-17

    Mn + 1AXn (MAX) phase materials based on Ti–Al–C have been irradiated at 400 °C (673 K) with fission neutrons to a fluence of 2 × 1025 n/m2 (E > 0.1 MeV), corresponding to ~ 2 displacements per atom (dpa). We report preliminary results of microcracking in the Al-containing MAX phase, which contained the phases Ti3AlC2 and Ti5Al2C3. Equibiaxial ring-on-ring tests of irradiated coupons showed that samples retained 10% of pre-irradiated strength. Volumetric swelling of up to 4% was observed. Phase analysis and microscopy suggest that anisotropic lattice parameter swelling caused microcracking. Lastly, variants of titanium aluminum carbide may bemore » unsuitable materials for irradiation at light water reactor-relevant temperatures.« less

  9. Low-noise low-jitter 32-pixels CMOS single-photon avalanche diodes array for single-photon counting from 300 nm to 900 nm

    SciTech Connect (OSTI)

    Scarcella, Carmelo; Tosi, Alberto Villa, Federica; Tisa, Simone; Zappa, Franco

    2013-12-15

    We developed a single-photon counting multichannel detection system, based on a monolithic linear array of 32 CMOS SPADs (Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Diodes). All channels achieve a timing resolution of 100 ps (full-width at half maximum) and a photon detection efficiency of 50% at 400 nm. Dark count rate is very low even at room temperature, being about 125 counts/s for 50 ?m active area diameter SPADs. Detection performance and microelectronic compactness of this CMOS SPAD array make it the best candidate for ultra-compact time-resolved spectrometers with single-photon sensitivity from 300 nm to 900 nm.

  10. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  11. Solid state phase equilibria and intermetallic compounds of the Al-Cr-Ho system

    SciTech Connect (OSTI)

    Pang, Mingjun; SAIC-GM-Wuling Automobile Co., Ltd., Liuzhou, Guangxi 545007 ; Zhan, Yongzhong; Du, Yong

    2013-02-15

    The solid state phase equilibria of the Al-Cr-Ho ternary system at 500 Degree-Sign C were experimentally investigated. The phase relations at 500 Degree-Sign C are governed by 14 three-phase regions, 29 two-phase regions and 15 single-phase regions. The existences of 10 binary compounds and 2 ternary phases have been confirmed. Al{sub 11}Cr{sub 2}, Al{sub 11}Cr{sub 4} and Al{sub 17}Ho{sub 2} were not found at 500 Degree-Sign C. Crystal structures of Al{sub 9}Cr{sub 4} and Al{sub 8}Cr{sub 4}Ho were determined by the Rietveld X-ray powder data refinement. Al{sub 9}Cr{sub 4} was found to exhibit cubic structure with space group I4-bar 3m (no. 217) and lattice parameters a=0.9107(5) nm. Al{sub 8}Cr{sub 4}Ho crystallizes in ThMn{sub 12} structure type with space group I4/mmm (no. 139) and lattice parameters a=0.8909(4) nm, c=0.5120(5) nm. It is concluded that the obtained Al{sub 4}Cr phase in this work should be {mu}-Al{sub 4}Cr by comparing with XRD pattern of the hexagonal {mu}-Al{sub 4}Mn compound. - Graphical abstract: The solid state phase equilibria of the Al-Cr-Ho ternary system at 500 Degree-Sign C. Highlights: Black-Right-Pointing-Pointer Al-Cr-Ho system has been investigated. Black-Right-Pointing-Pointer Al{sub 9}Cr{sub 4} has cubic structure with space group I4-bar 3m. Black-Right-Pointing-Pointer Al{sub 8}Cr{sub 4}Ho crystallizes in ThMn{sub 12} type with space group I4/mmm. Black-Right-Pointing-Pointer Al{sub 4}Cr phase is {mu}-type at 500 Degree-Sign C.

  12. 2012 ALS User Meeting Awards

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2 ALS User Meeting Awards Recipients of the 2012 Users' Executive Committee awards and Student Poster Competition were announced Tuesday, October 9, at the ALS User Meeting. David A. Shirley Award for Outstanding Scientific Achievement at the ALS shirley award The David A. Shirley Award for Scientific Achievement went to, from left, Carl Percival (University of Manchester), Dudley Shallcross [(University of Bristol) not pictured], and Craig Taatjes and David Osborn (Sandia), for making the first

  13. ALS Doctoral Fellowship in Residence

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Doctoral Fellowship in Residence Print The Advanced Light Source (ALS), a division of Lawrence Berkeley National Laboratory, is a national user facility that generates intense x-ray radiation for scientific and technological research. As the world's first third-generation synchrotron radiation source, the ALS offers outstanding performance in the VUV-soft x-ray energy range and excellent performance into the hard x-ray region. The facility welcomes researchers from universities, industries,

  14. ALS Doctoral Fellowship in Residence

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Doctoral Fellowship in Residence Print The Advanced Light Source (ALS), a division of Lawrence Berkeley National Laboratory, is a national user facility that generates intense x-ray radiation for scientific and technological research. As the world's first third-generation synchrotron radiation source, the ALS offers outstanding performance in the VUV-soft x-ray energy range and excellent performance into the hard x-ray region. The facility welcomes researchers from universities, industries,

  15. ALS Scientific Advisory Committee Charter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scientific Advisory Committee Charter Print This document was revised and approved December 18, 2008. I. FUNCTION AND REPORTING The ALS Scientific Advisory Committee (SAC) is advisory to the Berkeley Lab Director through the ALS Director. The SAC serves two primary functions: It acts as a "board of directors" to advise the Laboratory on current and future ALS operations, allocation of facility resources, strategic planning, budget development, and other major issues; and It reviews

  16. ALS Scientific Advisory Committee Charter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scientific Advisory Committee Charter Print This document was revised and approved December 18, 2008. I. FUNCTION AND REPORTING The ALS Scientific Advisory Committee (SAC) is advisory to the Berkeley Lab Director through the ALS Director. The SAC serves two primary functions: It acts as a "board of directors" to advise the Laboratory on current and future ALS operations, allocation of facility resources, strategic planning, budget development, and other major issues; and It reviews

  17. ALS Collaborative Postdoctoral Fellowship Program

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the National Center of Electron Microscopy, and the National Energy Research Scientific Computing Center. ALS Collaborative Postdoctoral Fellowships normally provide only partial...

  18. AL2007-05.doc

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AL 2007-05 Acquisition Regulation Date 03292007 ACQUISITION LETTER This Acquisition ... LETTERS REMAINING IN EFFECT NUMBER DATE SUBJECT 93-4 040793 Displaced Workers ...

  19. Data Management at the ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Data Management at the ALS Print Users of the ALS are responsible for meeting their data management obligations to their home institutions and granting agencies. Except as noted below for data stored at NERSC, the ALS does not provide specific resources to manage data that are generated through user experiments. Because the ALS does not have a facility-wide data archiving service or staff to manage the data, the user must generally make arrangements to copy data to their own storage systems or

  20. ALS Collaborative Postdoctoral Fellowship Program

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    scientists) to discuss possible projects and to identify external sources of matching funds. Applicants must then submit a completed ALS Collaborative Postdoctoral...

  1. ALS Evidence Confirms Combustion Theory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Evidence Confirms Combustion Theory Print Researchers recently uncovered the first step in the process that transforms gas-phase molecules into solid particles like soot and...

  2. ALS Scientific Advisory Committee Charter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    It acts as a "board of directors" to advise the Laboratory on current and future ALS operations, allocation of facility resources, strategic planning, budget development, and...

  3. Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures

    SciTech Connect (OSTI)

    Egorov, A. Yu. Karachinsky, L. Ya.; Novikov, I. I.; Babichev, A. V.; Berezovskaya, T. N.; Nevedomskiy, V. N.

    2015-10-15

    It is shown that metamorphic In{sub 0.3}Ga{sub 0.7}As/In{sub 0.3}Al{sub 0.7}As distributed Bragg reflectors (DBRs) with a reflection band at 1440–1600 nm and a reflectance of no less than 0.999 can be fabricated by molecular beam epitaxy (MBE) on a GaAs substrate. It is demonstrated that mesa structures formed from metamorphic DBRs on a GaAs substrate can be regrown by MBE and microcavities can be locally formed in two separate epitaxial processes. The results obtained can find wide application in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction.

  4. The SEMATECH Berkeley MET: extending EUV learning to 16-nm half pitch

    SciTech Connect (OSTI)

    Anderson, Christopher N.; Baclea-an, Lorie Mae; Denham, Paul E.; George, Simi; Goldberg, Kenneth A.; Jones, Michael; Smith, Nathan; Wallow, Thomas; Montgomery, Warren; Naulleau, Patrick P.

    2011-03-18

    Several high-performing resists identified in the past two years have been exposed at the 0.3-numerical-aperture (NA) SEMATECH Berkeley Microfield Exposure Tool (BMET) with an engineered dipole illumination optimized for 18-nm half pitch. Five chemically amplified platforms were found to support 20-nm dense patterning at a film thickness of approximately 45 nm. At 19-nm half pitch, however, scattered bridging kept all of these resists from cleanly resolving larger areas of dense features. At 18-nm half pitch, none of the resists were are able to cleanly resolve a single line within a bulk pattern. With this same illumination a directly imageable metal oxide hardmask showed excellent performance from 22-nm half pitch to 17-nm half pitch, and good performance at 16-nm half pitch, closely following the predicted aerial image contrast. This indicates that observed limitations of the chemically amplified resists are indeed coming from the resist and not from a shortcoming of the exposure tool. The imageable hardmask was also exposed using a Pseudo Phase-Shift-Mask technique and achieved clean printing of 15-nm half pitch lines and modulation all the way down to the theoretical 12.5-nm resolution limit of the 0.3-NA SEMATECH BMET.

  5. Scaling trends in SET pulse widths in Sub-100 nm bulk CMOS processes.

    SciTech Connect (OSTI)

    Narasimham, Balaji; Ahlbin, Jonathan R.; Schrimpf, Ronald D.; Gadlage, Matthew J.; Massengill, Lloyd W.; Vizkelethy, Gyorgy; Reed, Robert A.; Bhuva, Bharat L.

    2010-07-01

    Digital single-event transient (SET) measurements in a bulk 65-nm process are compared to transients measured in 130-nm and 90-nm processes. The measured SET widths are shorter in a 65-nm test circuit than SETs measured in similar 90-nm and 130-nm circuits, but, when the factors affecting the SET width measurements (in particular pulse broadening and the parasitic bipolar effect) are considered, the actual SET width trends are found to be more complex. The differences in the SET widths between test circuits can be attributed in part to differences in n-well contact area. These results help explain some of the inconsistencies in SET measurements presented by various researchers over the past few years.

  6. Elastic buckling of AlN ribbons on elastomeric substrate

    SciTech Connect (OSTI)

    Seo, H.-C.; Petrov, Ivan; Jeong, Hyejin; Chapman, Patrick; Kim, Kyekyoon

    2009-03-02

    For optoelectronic applications requiring unconventional substrates, use of flexible forms of semiconductors may be inevitable. We have fabricated a flexible form of single crystalline AlN ribbons with periodic and wavelike structures on an elastomeric substrate. Single crystalline AlN films were grown on Si (111) substrate using high vacuum unbalanced magnetron sputtering. Crystallinity of the AlN films was confirmed with x-ray diffraction and pole figure. The AlN ribbons were transferred to a prestrained (3.1%) elastomeric substrate and the resulting ''wavy'' ribbons on the substrate were flexible up to 30% strain without any crack formation on the surface. As the film thickness changed from 300 to 900 nm, the periods of the waves varied from 95 to 277 {mu}m, which were within a 10% error of the calculated values. When we applied more than 30% strain, mechanical instability, such as the failure of AlN ribbons due to the cracks on the surface and the merged ribbons, was observed.

  7. ALS Collaborative Postdoctoral Fellowship Program

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Collaborative Postdoctoral Fellowship Program Print The Advanced Light Source (ALS) Collaborative Postdoctoral Fellowship program provides challenging opportunities to conduct research and instrument development in areas supporting the scientific programs of the Department of Energy (DOE), Lawrence Berkeley National Laboratory (LBNL), and the ALS that include physical, chemical, material, energy, environmental, geological, and biological sciences. Fellows pursue individual research projects as

  8. ALS Collaborative Postdoctoral Fellowship Program

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Collaborative Postdoctoral Fellowship Program Print The Advanced Light Source (ALS) Collaborative Postdoctoral Fellowship program provides challenging opportunities to conduct research and instrument development in areas supporting the scientific programs of the Department of Energy (DOE), Lawrence Berkeley National Laboratory (LBNL), and the ALS that include physical, chemical, material, energy, environmental, geological, and biological sciences. Fellows pursue individual research projects as

  9. ALS Collaborative Postdoctoral Fellowship Program

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Collaborative Postdoctoral Fellowship Program Print The Advanced Light Source (ALS) Collaborative Postdoctoral Fellowship program provides challenging opportunities to conduct research and instrument development in areas supporting the scientific programs of the Department of Energy (DOE), Lawrence Berkeley National Laboratory (LBNL), and the ALS that include physical, chemical, material, energy, environmental, geological, and biological sciences. Fellows pursue individual research projects as

  10. QER Public Meeting in Santa Fe, NM: State, Local and Tribal Issues...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Office Auditorium 2600 Cerrillos Road Santa Fe, NM 87505-3258 Meeting Information Federal ... The entirety of all comments received in response to the Quadrennial Energy Review will ...

  11. Demonstration of 12 nm resolution Fresnel zone plate lens based soft x-ray microscopy

    SciTech Connect (OSTI)

    Chao, W.; Kim, J.; Rekawa, S.; Fischer, P.; Anderson, E. H.

    2009-06-05

    To extend soft x-ray microscopy to a resolution of order 10 nm or better, we developed a new nanofabrication process for Fresnel zone plate lenses. The new process, based on the double patterning technique, has enabled us to fabricate high quality gold zone plates with 12 nm outer zones. Testing of the zone plate with the full-field transmission x-ray microscope, XM-1, in Berkeley, showed that the lens clearly resolved 12 nm lines and spaces. This result represents a significant step towards 10 nm resolution and beyond.

  12. A widely tunable erbium-doped fiber laser pumped at 532 nm

    SciTech Connect (OSTI)

    Chen, C.Y. ); Choy, M.M.; Andrejco, M.J.; Saifi, M.A.; Lin, C. )

    1990-01-01

    In this paper, the authors report a tunable erbium-doped fiber laser with a very wide continuous-tuning range (1522--1567 nm). The wide tuning range was achieved using an aluminum/erbium-doped fiber; the aluminum co-doping is known to broaden the gain spectrum substantially. The tunable fiber laser has a ring laser configuration consisting of an in-line tunable etalon as the tuning element. Continuous tuning over 45 nm in the spectral range of 1522--1567 nm was achieved with 80 mW of pumping at 532 nm, using the second harmonic of a Nd:YAG laser as the pump source.

  13. The SEMATECH Berkeley MET pushing EUV development beyond 22-nm half pitch

    SciTech Connect (OSTI)

    Naulleau, P.; Anderson, C. N.; Backlea-an, L.-M.; Chan, D.; Denham, P.; George, S.; Goldberg, K. A.; Hoef, B.; Jones, G.; Koh, C.; La Fontaine, B.; McClinton, B.; Miyakawa, R.; Montgomery, W.; Rekawa, S.; Wallow, T.

    2010-03-18

    Microfield exposure tools (METs) play a crucial role in the development of extreme ultraviolet (EUV) resists and masks, One of these tools is the SEMATECH Berkeley 0.3 numerical aperture (NA) MET, Using conventional illumination this tool is limited to approximately 22-nm half pitch resolution. However, resolution enhancement techniques have been used to push the patterning capabilities of this tool to half pitches of 18 nm and below, This resolution was achieved in a new imageable hard mask which also supports contact printing down to 22 nm with conventional illumination. Along with resolution, line-edge roughness is another crucial hurdle facing EUV resists, Much of the resist LER, however, can be attributed to the mask. We have shown that intenssionally aggressive mask cleaning on an older generation mask causes correlated LER in photoresist to increase from 3.4 nm to 4,0 nm, We have also shown that new generation EUV masks (100 pm of substrate roughness) can achieve correlated LER values of 1.1 nm, a 3x improvement over the correlated LER of older generation EUV masks (230 pm of substrate roughness), Finally, a 0.5-NA MET has been proposed that will address the needs of EUV development at the 16-nm node and beyond, The tool will support an ultimate resolution of 8 nm half-pitch and generalized printing using conventional illumination down to 12 nm half pitch.

  14. EM, N.M. Officials Celebrate New Emergency Center for Waste Isolation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    CARLSBAD, N.M. - Principal Deputy Assistant Secretary Mark Whitney joined New Mexico ... Recovery Manager Tammy Reynolds; New Mexico Environment Department Secretary Ryan ...

  15. An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band

    SciTech Connect (OSTI)

    Zhao, S.; Liu, X.; Kang, J.; Mi, Z.; Woo, S. Y.; Botton, G. A.

    2015-07-27

    We have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting the Anderson localization of light, we have demonstrated electrically injected AlGaN nanowire lasers that can operate at 262.1 nm. The threshold current density is 200 A/cm{sup 2} at 77 K. The relatively low threshold current is attributed to the high Q-factor of the random cavity and the three-dimensional quantum confinement offered by the atomic-scale composition modulation in self-organized AlGaN nanowires.

  16. AlGaAs converters and arrays for laser power beaming

    SciTech Connect (OSTI)

    Khvostikov, Vladimir Sorokina, Svetlana; Potapovich, Nataliia; Khvostikova, Olga; Shvarts, Maxim; Timoshina, Nailya; Andreev, Viacheslav

    2015-09-28

    This study reports on the development of AlGaAs/GaAs-based laser power photovoltaic (PV) converters fabricated by LPE. The monochromatic (λ = 809 nm) conversion efficiency up to 58% is measured for cells with p-n junction in Al{sub 0.07}Ga{sub 0.93}As and low (x = 0.25-0.3) Al concentration ‘window’. Modules, which have converters of low and high power laser radiation and the voltage of 4V, have been designed and fabricated. Comparison of output parameters measured at two different conditions (i.e., under flash lamp and laser beam) has been performed.

  17. Spectroscopic study of carbon plasma produced by the first (1064 nm) and second (532 nm) harmonics of Nd:YAG laser

    SciTech Connect (OSTI)

    Hanif, M.; Salik, M.; Arif, F.

    2015-03-15

    In this research work, spectroscopic studies of carbon (C) plasma by using laser-induced breakdown spectroscopy (LIBS) are presented. The plasma was produced by the first (1064 nm) and second (532 nm) harmonics of a Q-switched Nd:YAG (Quantel Brilliant) pulsed laser having a pulse duration of 5 ns and 10-Hz repetition rate, which is capable of delivering 400 mJ at 1064 nm and 200 mJ at 532 nm. The laser beam was focused on the target material (100% carbon) by placing it in air at atmospheric pressure. The experimentally observed line profiles of five neutral carbon (C I) lines at 247.85, 394.22, 396.14, 588.95, and 591.25 nm were used to extract the electron temperature T{sub e} by using the Boltzmann plot method and determine its value, 9880 and 9400 K, respectively, for the fundamental and second harmonics of the laser, whereas the electron density N{sub e} was determined from the Stark broadening profile of neutral carbon line at 247.85 nm. The values of N{sub e} at a distance of 0.05 mm from the target surface for the fundamental-harmonic laser with a pulse energy of 130 mJ and the second-harmonic laser with a pulse energy of 72 mJ are 4.68 × 10{sup 17} and 5.98 × 10{sup 17} cm{sup −3}, respectively. This extracted information on T{sub e} and N{sub e} is useful for the deposition of carbon thin films by using the pulsed laser deposition technique. Moreover, both plasma parameters (T{sub e} and N{sub e}) were also calculated by varying the distance from the target surface along the line of propagation of the plasma plume and also by varying the laser irradiance.

  18. Oxidation resistant nanocrystalline MCrAl(Y) coatings and methods of forming such coatings

    DOE Patents [OSTI]

    Cheruvu, Narayana S.; Wei, Ronghua

    2014-07-29

    The present disclosure relates to an oxidation resistant nanocrystalline coating and a method of forming an oxidation resistant nanocrystalline coating. An oxidation resistant coating comprising an MCrAl(Y) alloy may be deposited on a substrate, wherein M, includes iron, nickel, cobalt, or combinations thereof present greater than 50 wt % of the MCrAl(Y) alloy, chromium is present in the range of 15 wt % to 30 wt % of the MCrAl(Y) alloy, aluminum is present in the range of 6 wt % to 12 wt % of the MCrAl(Y) alloy and yttrium, is optionally present in the range of 0.1 wt % to 0.5 wt % of the MCrAl(Y) alloy. In addition, the coating may exhibit a grain size of 200 nm or less as deposited.

  19. ALS Doctoral Fellowship in Residence

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and technological research. As the world's first third-generation synchrotron radiation source, the ALS offers outstanding performance in the VUV-soft x-ray energy range and...

  20. ALS 20th Anniversary Celebration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    20th Anniversary Celebration Print The 20th anniversary of the ALS was celebrated on Friday, October 4, with style, good humor, lots of stories, and a very large cake. More...

  1. ALS Scientific Advisory Committee Charter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... The SAC will meet as often as necessary but no less than twice a year. The deliberations of the SAC will be confidential to the extent legally possible. The ALS Director andor ...

  2. ALS Doctoral Fellowship in Residence

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Doctoral Fellowship in Residence Print The Advanced Light Source (ALS), a division of Lawrence Berkeley National Laboratory, is a national user facility that generates intense x-ray radiation for scientific and technological research. As the world's first third-generation synchrotron radiation source, the ALS offers outstanding performance in the VUV-soft x-ray energy range and excellent performance into the hard x-ray region. The facility welcomes researchers from universities, industries, and

  3. ALS Doctoral Fellowship in Residence

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Doctoral Fellowship in Residence Print The Advanced Light Source (ALS), a division of Lawrence Berkeley National Laboratory, is a national user facility that generates intense x-ray radiation for scientific and technological research. As the world's first third-generation synchrotron radiation source, the ALS offers outstanding performance in the VUV-soft x-ray energy range and excellent performance into the hard x-ray region. The facility welcomes researchers from universities, industries, and

  4. ALS Doctoral Fellowship in Residence

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Doctoral Fellowship in Residence Print The Advanced Light Source (ALS), a division of Lawrence Berkeley National Laboratory, is a national user facility that generates intense x-ray radiation for scientific and technological research. As the world's first third-generation synchrotron radiation source, the ALS offers outstanding performance in the VUV-soft x-ray energy range and excellent performance into the hard x-ray region. The facility welcomes researchers from universities, industries, and

  5. ALS Evidence Confirms Combustion Theory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Evidence Confirms Combustion Theory ALS Evidence Confirms Combustion Theory Print Wednesday, 22 October 2014 11:43 Researchers recently uncovered the first step in the process that transforms gas-phase molecules into solid particles like soot and other carbon-based compounds. It's a discovery that could help combustion chemists make more efficient, less polluting fuels and help materials scientists fine-tune their carbon nanotubes and graphene sheets for faster, smaller electronics. In

  6. National Environmental Policy Act (NEPA) compliance at Sandia National Laboratories/New Mexico (SNL/NM)

    SciTech Connect (OSTI)

    Wolff, T.A.; Hansen, R.P.

    1998-08-01

    This report on National Environmental Policy Act (NEPA) compliance at Sandia National Laboratories/New Mexico (SNL/NM) chronicles past and current compliance activities and includes a recommended strategy that can be implemented for continued improvement. This report provides a list of important references. Attachment 1 contains the table of contents for SAND95-1648, National Environmental Policy Act (NEPA) Compliance Guide Sandia National Laboratories (Hansen, 1995). Attachment 2 contains a list of published environmental assessments (EAs) and environmental impact statements (EISs) prepared by SNL/NM. Attachment 3 contains abstracts of NEPA compliance papers authored by SNL/NM and its contractors.

  7. A transmission electron microscopy study of the deformation behavior underneath nanoindents in nano-scale Al-TiN multilayered composites

    SciTech Connect (OSTI)

    Bhattacharyya, Dhriti; Mara, Nathan A; Dickerson, Patricia O; Misra, Amit; Hoagland, R G

    2009-01-01

    Nano-scale multilayered Al-TiN composites were deposited with DC magnetron sputtering technique in two different layer thickness ratios - Al:TiN = 1:1 and Al:TiN = 9:1. The Al layer thickness varied from 2 nm to 450 nm. The hardness of the samples was tested by nanoindentation using a Berkovich tip. Cross-sectional Transmission Electron Microscopy (TEM) was carried out on samples extracted with Focused Ion Beam (FIB) from below the nanoindents. This paper presents the results of the hardness tests in the Al-TiN multilayers with the two different thickness ratios and the observations from the cross-sectional TEM studies of the regions underneath the indents. These studies showed remarkable strength in the multilayers, as well as some very interesting deformation behavior in the TiN layers at extremely small length scales, where the hard TiN layers undergo co-deformation with the Al layers.

  8. Microsoft Word - AL2006-11.doc

    Broader source: Energy.gov (indexed) [DOE]

    Guide Chapter 7.1, Acquisition Planning Acquisition Guide Chapter 42.5, Contract Management Planning When is this Acquisition Letter (AL) Effective? This AL is effective...

  9. ALS Ceramics Materials Research Advances Engine Performance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Ceramics Materials Research Advances Engine Performance ALS Ceramics Materials Research Advances Engine Performance Print Thursday, 27 September 2012 00:00 ritchie ceramics...

  10. ALS@20 Kick-Off Celebration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    tribulations encountered during the construction of the ALS from former Director Jay Marx, current ALS Scientific Director Steve Kevan and Director Roger Falcone talked about...

  11. Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer

    SciTech Connect (OSTI)

    Chun, J.-S.; Desjardins, P.; Lavoie, C.; Shin, C.-S.; Cabral, C.; Petrov, I.; Greene, J. E.

    2001-06-15

    Single-crystal TiN(111) layers, 45 nm thick, were grown on MgO(111) by ultrahigh vacuum reactive magnetron sputter deposition in pure N{sub 2} discharges at T{sub s}=700{degree}C. Epitaxial Al(111) overlayers, 160 nm thick, were then deposited at T{sub s}=100{degree}C in Ar without breaking vacuum. Interfacial reactions and changes in bilayer microstructure due to annealing at 620 and 650{degree}C were investigated using x-ray diffraction and transmission electron microscopy (TEM). The interfacial regions of samples annealed at 620{degree}C consist of continuous {approx_equal}7-nm-thick epitaxial wurtzite-structure AlN(0001) layers containing a high density of stacking faults, with {approx_equal}22 nm thick tetragonal Al{sub 3}Ti(112) overlayers. Surprisingly, samples annealed at the higher temperature are more stable against Al{sub 3}Ti formation. TEM analyses of bilayers annealed at 650{degree}C (10{degree}C below the Al melting point!) reveal only the self-limited growth of an {approx_equal}3-nm-thick interfacial layer of perfect smooth epitaxial wurtzite-structure AlN(0001) which serves as an extremely effective deterrent for preventing further interlayer reactions. {copyright} 2001 American Institute of Physics.

  12. File:USDA-CE-Production-GIFmaps-NM.pdf | Open Energy Information

    Open Energy Info (EERE)

    NM.pdf Jump to: navigation, search File File history File usage New Mexico Ethanol Plant Locations Size of this preview: 776 600 pixels. Full resolution (1,650 1,275...

  13. HSQ double patterning process for 12 nm resolution x-ray zone...

    Office of Scientific and Technical Information (OSTI)

    algorithm, we have successfully fabricated in-house gold zone plates of 12 nm outer zones. ... Publication Date: 2009-06-16 OSTI Identifier: 963539 Report Number(s): LBNL-2100E TRN: ...

  14. NM Stat. 62-9 - The Utility Franchise | Open Energy Information

    Open Energy Info (EERE)

    NM Stat. 62-9 - The Utility FranchiseLegal Abstract This statute governs state law pertaining to utilities. Published NA Year Signed or Took Effect 2013 Legal Citation...

  15. Change LOS ALAMOS, N.M., May 19, 2015-Researchers at Los Alamos...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    tree mortality accelerating in forests May 19, 2015 Los Alamos' paper published in Nature Climate Change LOS ALAMOS, N.M., May 19, 2015-Researchers at Los Alamos National...

  16. DOI-BLM-NM-L000-2012-0020-DNA | Open Energy Information

    Open Energy Info (EERE)

    info. GDP from BLM's Grass Wells Database, LR2000 SRPs, or State Mineral Commissions Databases. Retrieved from "http:en.openei.orgwindex.php?titleDOI-BLM-NM-L000-2012-0020-DN...

  17. DOI-BLM-NM-L000-2012-0218-DNA | Open Energy Information

    Open Energy Info (EERE)

    info. GDP from BLM's Grass Wells Database, LR2000 SRPs, or State Mineral Commissions Databases. Retrieved from "http:en.openei.orgwindex.php?titleDOI-BLM-NM-L000-2012-0218-DN...

  18. Development of bottom-emitting 1300 nm vertical-cavity surface...

    Office of Scientific and Technical Information (OSTI)

    Title: Development of bottom-emitting 1300 nm vertical-cavity surface-emitting lasers. No abstract prepared. Authors: Fish, M. A. 1 ; Serkland, Darwin Keith ; Guilfoyle, Peter S. ...

  19. LOS ALAMOS, N.M., June 4, 2013-Los Alamos National Laboratory...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    laser-driven neutrons to stop nuclear smugglers June 4, 2013 Los Alamos shows first nuclear material detection by single short-pulse-laser-driven neutron source LOS ALAMOS, N.M., ...

  20. DOI-BLM-NM-L000-2012-0200-DNA | Open Energy Information

    Open Energy Info (EERE)

    00-DNA Jump to: navigation, search NEPA Document Collection for: DOI-BLM-NM-L000-2012-0200-DNA DNA at Lightning Dock Geothermal Area for GeothermalWell Field, DNA for Injection...

  1. DOI-BLM-NM-L000-2012-0111-DNA | Open Energy Information

    Open Energy Info (EERE)

    111-DNA Jump to: navigation, search NEPA Document Collection for: DOI-BLM-NM-L000-2012-0111-DNA DNA at Lightning Dock Geothermal Area for GeothermalExploration, DNA for Three...

  2. DOI-BLM-NM-L000-2012-0046-CX | Open Energy Information

    Open Energy Info (EERE)

    6-CX Jump to: navigation, search NEPA Document Collection for: DOI-BLM-NM-L000-2012-0046-CX CX at Lightning Dock Geothermal Area for GeothermalExploration CX at Lightning Dock...

  3. DOI-BLM-NM-L000-2012-0042-DNA | Open Energy Information

    Open Energy Info (EERE)

    2-DNA Jump to: navigation, search NEPA Document Collection for: DOI-BLM-NM-L000-2012-0042-DNA DNA at Lightning Dock Geothermal Area for GeothermalExploration DNA for Well 55-7 at...

  4. In situ study of e-beam Al and Hf metal deposition on native oxide InP (100)

    SciTech Connect (OSTI)

    Dong, H.; KC, Santosh; Azcatl, A.; Cabrera, W.; Qin, X.; Brennan, B.; Cho, K.; Wallace, R. M.; Zhernokletov, D.

    2013-11-28

    The interfacial chemistry of thin Al (∼3 nm) and Hf (∼2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The In-oxides are completely scavenged forming In-In/In-(Al/Hf) bonding after Al and Hf metal deposition. The P-oxide concentration is significantly decreased, and the P-oxide chemical states have been changed to more P-rich oxides upon metal deposition. Indium diffusion through these metals before and after annealing at 250 °C has also been characterized. First principles calculation shows that In has lower surface formation energy compared with Al and Hf metals, which is consistent with the observed indium diffusion behavior.

  5. Laser induced effects on ZnO targets upon ablation at 266 and 308 nm wavelengths

    SciTech Connect (OSTI)

    Jadraque, Maria; Martin, Margarita; Domingo, Concepcion

    2008-07-15

    The development of structural changes in ZnO targets, upon laser irradiation at the wavelengths of 266 and 308 nm, is studied by Raman spectroscopy. At the wavelength of 308 nm, oxygen vacancies are found to develop monotonically with increasing laser intensity. At 266 nm, a structural change in the irradiated ZnO targets, possibly related to nanostructuring, is observed above the laser fluence of 0.45 J cm{sup -2}. The different natures of the laser target interaction processes taking place at both wavelengths are investigated through the characterization of the composition and energy distribution of the species ejected in the ablation. The energy of the neutral Zn and Zn{sub 2} present in the ablation at 308 nm shows a smooth dependence on laser fluence which is consistent with the observed smooth development of oxygen vacancies. At 266 nm, the average kinetic energy of the ejected fragments is higher than at 308 nm and changes abruptly with the ablating laser fluence, consistently with the presence of a fluence threshold above which structural transform is observed at this wavelength. The plume shows the same neutral composition (Zn, ZnO, and Zn{sub 2}) at both wavelengths but the dependence on fluence of the ratio of neutral atomic Zn to the dimer Zn{sub 2} shows significant differences. From the latter, different temperature regimes can be inferred in the plume generated at both wavelengths. At 266 nm the cationic composition of the plume is mainly stoichiometric whereas at 308 nm ZnO{sub 2(3)}H{sub 2(1)}{sup +} cations have the highest intensity.

  6. DOE - Office of Legacy Management -- Ambrosia Lake Mill Site - NM 0-01

    Office of Legacy Management (LM)

    Ambrosia Lake Mill Site - NM 0-01 FUSRAP Considered Sites Site: Ambrosia Lake Mill Site (NM.0-01) Licensed to DOE for long-term custody and managed by the Office of Legacy Management Designated Name: Ambrosia Lake, New Mexico, Disposal Site Alternate Name: Ambrosia Lake Mill Site Uranium Mill in Ambrosia Lake Location: McKinley County, New Mexico Evaluation Year: Site Operations: Site Disposition: Uranium Mill Tailings Radiation Control Act (UMTRCA) Title I site Radioactive Materials Handled:

  7. DOE - Office of Legacy Management -- Blue Water AEC Ore Buying Station - NM

    Office of Legacy Management (LM)

    0-02 Blue Water AEC Ore Buying Station - NM 0-02 FUSRAP Considered Sites Site: Blue Water AEC Ore Buying Station (NM.0-02 ) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: The history of domestic uranium procurement under U.S. Atomic Energy Commission (AEC) contracts identifies a number of ore buying stations (sampling and storage sites)

  8. DOE - Office of Legacy Management -- Grants AEC Ore Buying Station - NM 18

    Office of Legacy Management (LM)

    Grants AEC Ore Buying Station - NM 18 FUSRAP Considered Sites Site: Grants AEC Ore Buying Station (NM.18 ) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: The history of domestic uranium procurement under U.S. Atomic Energy Commission (AEC) contracts identifies a number of ore buying stations (sampling and storage sites) that were operated

  9. DOE - Office of Legacy Management -- Project Gas Buggy Site - NM 14

    Office of Legacy Management (LM)

    Gas Buggy Site - NM 14 FUSRAP Considered Sites Site: Project Gas Buggy Site (NM.14 ) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: Also see Gasbuggy, New Mexico, Site Nevada Test Site History Documents Related to Project Gas Buggy Site Fact Sheet Gasbuggy, New Mexico The Gasbuggy Site is located in northwestern New Mexico in Rio Arriba County

  10. DOE - Office of Legacy Management -- Shiprock Mill Site - NM 0-04

    Office of Legacy Management (LM)

    Shiprock Mill Site - NM 0-04 Site ID (CSD Index Number): NM.0-04 Site Name: Shiprock Mill Site Site Summary: Site Link: Shiprock Disposal, New Mexico, Site External Site Link: Alternate Name(s): Shiprock Mill Site Uranium Mill at Shiprock Alternate Name Documents: Location: Shiprock, New Mexico, Navajo Nation Location Documents: Historical Operations (describe contaminants): Historical Operations Documents: Eligibility Determination: Uranium Mill Tailings Radiation Control Act (UMTRCA) Title I

  11. ALS 20th Anniversary Celebration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    20th Anniversary Celebration Print The 20th anniversary of the ALS was celebrated on Friday, October 4, with style, good humor, lots of stories, and a very large cake. More important, however, was the large number of current and former colleagues and users, who were delighted to have the opportunity to visit and catch up with former workmates. When not chatting with colleagues or listening to the high-shool chamber trio, attendees were entertained by a video montage, old photos featuring ALS

  12. Imaging magnetic domain structure in sub-500 nm thin film elements

    SciTech Connect (OSTI)

    Kirk, K. J.; McVitie, S.; Chapman, J. N.; Wilkinson, C. D. W.

    2001-06-01

    Magnetic imaging in the transmission electron microscope (TEM) has been used to examine submicron elements with the aim of discovering down to what element size complex domain patterns can form. The elements were squares, circles, triangles, and pentagons in the size range 100{endash}500 nm and were made from 36 nm Co films or 8 nm Ni{sub 80}Fe{sub 20} (NiFe) with in-plane magnetization. The magnetic domain structures in these elements were imaged at high resolution using the differential phase contrast imaging mode in a TEM. Nonuniform magnetization structures were seen in the images. Vortices were present at remanence in all shapes of 36-nm-thick Co elements down to 100 nm size and in circular NiFe elements down to 116 nm diameter. Triangular NiFe elements did not have a vortex state at remanence, instead the magnetization curved round within the element but did not achieve complete flux closure. In simulations of square and circular NiFe elements, it was found that defects at the edges of the elements encouraged reversal by a vortex mechanism, whereas for simulated elements with no defects, reversal was by rotation and occurred at much lower fields. {copyright} 2001 American Institute of Physics.

  13. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  14. A=17Al (1993TI07)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Al (1993TI07) (Not observed) See (1983ANZQ, 1988WA18, 1992AV03).

  15. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  16. Microsoft Word - AL2008-05.doc

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy No. AL 2008-05 Acquisition Regulation Date 04/03/2008 ACQUISITION LETTER This Acquisition Letter is issued under the authority of the DOE and NNSA Procurement Executives. Subject: Environmental, Energy, and Transportation Management References: Executive Order 13423, dated January 24, 2007 Implementing Instructions, dated March 28, 2007 When is this Acquisition Letter (AL) effective? This AL is effective upon issuance. When does this AL Expire? This AL remains in effect

  17. Effect of AC target power on AlN film quality

    SciTech Connect (OSTI)

    Knisely, Katherine Grosh, Karl

    2014-09-01

    The influence of alternating current (AC) target power on film stress, roughness, and x-ray diffraction rocking curve full width half maximum (FWHM) was examined for AlN films deposited using S-gun magnetron sputtering on insulative substrates consisting of Si wafers with 575 nm thermal oxide. As the AC target power was increased from 5 to 8 kW, the deposition rate increased from 9.3 to 15.9 A/s, film stress decreased from 81 to −170 MPa, and the rocking curve FWHM increased from 0.98 to 1.03°. AlN film behavior is observed to change with target life; films deposited at 200 kWh target life were approximately 40 MPa more compressive and had 0.02° degree higher rocking curve FWHM values than films deposited at 130 kWh. AlN films deposited in two depositions were compared with films deposited in a single deposition, in order to better characterize the growth behavior and properties of AlN films deposited on an existing AlN film, which is not well understood. Two deposition films, when compared with single deposition films, showed no variation in residual stress trends or grain size behavior, but the average film roughness increased from 0.7 to 1.4 nm and rocking curve FWHM values increased by more than 0.25°.

  18. Obtaining composite Zr-Al-O coating on the surface of zirconium by microplasma oxidation

    SciTech Connect (OSTI)

    Gubaidulina, Tatiana A. E-mail: ostk@mail2000ru; Kuzmin, Oleg S. E-mail: ostk@mail2000ru; Fedorischva, Marina V. E-mail: kmp1980@mail.ru; Kalashnikov, Mark P. E-mail: kmp1980@mail.ru; Sergeev, Viktor P.

    2014-11-14

    The paper describes the application of the microplasma oxidation for production of Zr-Al-O composition on the surface of zirconium. Certification of a new-type power supply for depositing oxide ceramic coatings by microplasma oxidation was also carried out. The growth rate of Zr-Al-O coating amounted around 0.2 nm/s, which around 10 times exceeds that for depositing similar coatings using the similar equipment. We have studied the change of surface morphology and the chemical composition of the formed ceramic coating by means of EVO 50 scanning electron microscope and X-ray spectral analysis.

  19. A compact ultranarrow high-power laser system for experiments with 578 nm ytterbium clock transition

    SciTech Connect (OSTI)

    Cappellini, G.; Lombardi, P.; Mancini, M.; Pagano, G.; Pizzocaro, M.; Fallani, L.; Catani, J.

    2015-07-15

    In this paper, we present the realization of a compact, high-power laser system able to excite the ytterbium clock transition at 578 nm. Starting from an external-cavity laser based on a quantum dot chip at 1156 nm with an intra-cavity electro-optic modulator, we were able to obtain up to 60 mW of visible light at 578 nm via frequency doubling. The laser is locked with a 500 kHz bandwidth to an ultra-low-expansion glass cavity stabilized at its zero coefficient of thermal expansion temperature through an original thermal insulation and correction system. This laser allowed the observation of the clock transition in fermionic {sup 173}Y b with a <50 Hz linewidth over 5 min, limited only by a residual frequency drift of some 0.1 Hz/s.

  20. ALS Evidence Confirms Combustion Theory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Evidence Confirms Combustion Theory Print Researchers recently uncovered the first step in the process that transforms gas-phase molecules into solid particles like soot and other carbon-based compounds. It's a discovery that could help combustion chemists make more efficient, less polluting fuels and help materials scientists fine-tune their carbon nanotubes and graphene sheets for faster, smaller electronics. In addition, the results could have implications for the burgeoning field of

  1. ALS Evidence Confirms Combustion Theory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Evidence Confirms Combustion Theory Print Researchers recently uncovered the first step in the process that transforms gas-phase molecules into solid particles like soot and other carbon-based compounds. It's a discovery that could help combustion chemists make more efficient, less polluting fuels and help materials scientists fine-tune their carbon nanotubes and graphene sheets for faster, smaller electronics. In addition, the results could have implications for the burgeoning field of

  2. ALS Evidence Confirms Combustion Theory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Evidence Confirms Combustion Theory Print Researchers recently uncovered the first step in the process that transforms gas-phase molecules into solid particles like soot and other carbon-based compounds. It's a discovery that could help combustion chemists make more efficient, less polluting fuels and help materials scientists fine-tune their carbon nanotubes and graphene sheets for faster, smaller electronics. In addition, the results could have implications for the burgeoning field of

  3. ALS Evidence Confirms Combustion Theory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Evidence Confirms Combustion Theory Print Researchers recently uncovered the first step in the process that transforms gas-phase molecules into solid particles like soot and other carbon-based compounds. It's a discovery that could help combustion chemists make more efficient, less polluting fuels and help materials scientists fine-tune their carbon nanotubes and graphene sheets for faster, smaller electronics. In addition, the results could have implications for the burgeoning field of

  4. ALS Evidence Confirms Combustion Theory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Evidence Confirms Combustion Theory Print Researchers recently uncovered the first step in the process that transforms gas-phase molecules into solid particles like soot and other carbon-based compounds. It's a discovery that could help combustion chemists make more efficient, less polluting fuels and help materials scientists fine-tune their carbon nanotubes and graphene sheets for faster, smaller electronics. In addition, the results could have implications for the burgeoning field of

  5. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    SciTech Connect (OSTI)

    Wan, Yimao Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres

    2015-12-07

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} for 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  6. A 4 to 0.1 nm FEL Based on the SLAC Linac

    SciTech Connect (OSTI)

    Pellegrini, C.; /UCLA

    2012-06-05

    The author show that using existing electron gun technology and a high energy linac like the one at SLAC, it is possible to build a Free Electron Laser operating around the 4 nm water window. A modest improvement in the gun performance would further allow to extend the FEL to the 0.1 nm region. Such a system would produce radiation with a brightness many order of magnitude above that of any synchrotron radiation source, existing or under construction, with laser power in the multigawatt region and subpicosecond pulse length.

  7. Measurement of the quantum efficiency of TMAE and TEA from threshold to 120 nm

    SciTech Connect (OSTI)

    Holroyd, R.A.; Preses, J.M.; Woody, C.L.; Johnson, R.A.

    1986-01-01

    Several existing and planned high energy physics experiments incorporate detectors which use either TMAE (tetrakis-dimethylaminoethylene) or TEA (triethylamine) as their photosensitive agent. Understanding the operation of these devices requires knowledge of the absolute photoionization quantum efficiencies and absorption lengths of TMAE and TEA. In an experiment performed at the National Synchrotron Light source at Brookhaven National Laboratory, we have measured these parameters from 120 nm to 280 nm. The quantum efficiencies were normalized to the known photoionization yields of benzene and cis-2-butene. The results of these measurements and details of the experiment are presented in this paper.

  8. Electron density distribution and crystal structure of 27R-AlON, Al{sub 9}O{sub 3}N{sub 7}

    SciTech Connect (OSTI)

    Asaka, Toru; Banno, Hiroki; Funahashi, Shiro; Hirosaki, Naoto; Fukuda, Koichiro

    2013-08-15

    The crystal structure of Al{sub 9}O{sub 3}N{sub 7} was characterized by laboratory X-ray powder diffraction (CuKα{sub 1}). The title compound is trigonal with space group R3-bar m (centrosymmetric). The hexagonal unit-cell dimensions (Z=3) are a=0.30656(2) nm, c=7.2008(3) nm and V=0.58605(5) nm{sup 3}. The initial structural model was derived by the powder charge-flipping method and subsequently refined by the Rietveld method. The final structural model showed the positional disordering of two of the five types of Al sites. The maximum-entropy method-based pattern fitting method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensity partitioning was minimized. The disordered crystal structure was successfully described by overlapping five types of domains with ordered atom arrangements. The distribution of atomic positions in one of the five types of domains can be achieved in the space group R3{sup ¯}m. The atom arrangements in the four other domains are noncentrosymmetric with the space group R3m. Two of the four types of domains are related by a pseudo-symmetry inversion, and the two remaining domains also have each other the inversion pseudo-symmetry. The very similar domain structure has been also reported for 21R-AlON (Al{sub 7}O{sub 3}N{sub 5}) in our previous study. - Graphical abstract: A bird’s eye view of electron densities up to 50% (0.074 nm{sup −3}) of the maximum on the plane parallel to (110) with the corresponding atomic arrangements of Al{sub 9}O{sub 3}N{sub 7}. Highlights: • Crystal structure of Al{sub 9}O{sub 3}N{sub 7} is determined by laboratory X-ray powder diffraction. • The atom arrangements are represented by the split-atom model. • The maximum-entropy method-based pattern fitting method is used to confirm the validity of the model. • The disordered structure is described by overlapping five types of domains with ordered atom arrangements.

  9. Ab initio modeling of zincblende AlN layer in Al-AlN-TiN multilayers

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yadav, S. K.; Wang, J.; Liu, X. -Y.

    2016-06-13

    An unusual growth mechanism of metastable zincblende AlN thin film by diffusion of nitrogen atoms into Al lattice is established. Using first-principles density functional theory, we studied the possibility of thermodynamic stability of AlN as a zincblende phase due to epitaxial strains and interface effect, which fails to explain the formation of zincblende AlN. We then compared the formation energetics of rocksalt and zincblende AlN in fcc Al through direct diffusion of nitrogen atoms to Al octahedral and tetrahedral interstitials. Furthermore, the formation of a zincblende AlN thin film is determined to be a kinetically driven process, not a thermodynamicallymore » driven process.« less

  10. Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructure on Si(111)

    SciTech Connect (OSTI)

    Chowdhury, Subhra; Biswas, Dhrubes

    2015-02-23

    This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600?nm, 400?nm, and 200?nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5?nm, In{sub 0.17}Al{sub 0.83}N1.25?nm, GaN1.5?nm, In{sub 0.17}Al{sub 0.83}N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 10{sup 10?}cm{sup ?2} to 10{sup 8?}cm{sup ?2} with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure. Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89?nm, 1.2?nm, and 1.45?nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs.

  11. Synthesis of AlN/Al Polycrystals along with Al Nanoparticles Using Thermal Plasma Route

    SciTech Connect (OSTI)

    Kanhe, Nilesh S.; Nawale, A. B.; Kulkarni, N. V.; Bhoraskar, S. V.; Mathe, V. L.; Das, A. K.

    2011-07-15

    This paper for the first time reports the (200) oriented growth of hexagonal Aluminum nitride crystals during synthesis of aluminum nanoparticles in dc transferred arc thermal plasma reactor by gas phase condensation in nitrogen plasma. The structural and morphological study of as synthesized AlN crystal and aluminium nanoparticles was done by using the x-ray diffraction method, scanning electron microscopy and transmission electron microscopy.

  12. Fabrication of Al{sub 2}O{sub 3}-20 vol.% Al nanocomposite powders using high energy milling and their sinterability

    SciTech Connect (OSTI)

    Zawrah, M.F.; Abdel-kader, H.; Elbaly, N.E.

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Al{sub 2}O{sub 3}/Al nanocomposite powders were prepared via high energy ball milling. After 20 h milling, the size of Al{sub 2}O{sub 3}-20 vol.% Al nanocomposite particles was in the range of 23-29 nm. A uniform distribution of nanosized Al reinforcement throughout the Al{sub 2}O{sub 3} matrix, coating the particles was successfully obtained. Black-Right-Pointing-Pointer There was no any sign of phase changes during the milling. A competition between the cold welding mechanism and the fracturing mechanism were found during milling and finally the above two mechanisms reached an equilibrium. Black-Right-Pointing-Pointer The highest value of relative density was obtained for the sintered bodies at 1500 Degree-Sign C. Black-Right-Pointing-Pointer The harness of the sintered composite was decreased while the fracture toughness was improved after addition Al into alumina. -- Abstract: In this study, alumina-based matrix nanocomposite powders reinforced with Al particles were fabricated and investigated. The sinterability of the prepared nanocomposite powder at different firing temperature was also conducted. Their mechanical properties in terms of hardness and toughness were tested. Alumina and aluminum powder mixtures were milled in a planetary ball mill for various times up to 30 h in order to produce Al{sub 2}O{sub 3}-20% Al nanocomposite. The phase composition, morphological and microstructural changes during mechanical milling of the nanocomposite particles were characterized by X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope (SEM) techniques, respectively. The crystallite size and internal strain were evaluated by XRD patterns using Scherrer methods. A uniform distribution of the Al reinforcement in the Al{sub 2}O{sub 3} matrix was successfully obtained after milling the powders. The results revealed that there was no any sign of phase changes during the milling. The crystal

  13. Efficient methylammonium lead iodide perovskite solar cells with active layers from 300 to 900 nm

    SciTech Connect (OSTI)

    Momblona, C.; Malinkiewicz, O.; Soriano, A.; Gil-Escrig, L.; Bandiello, E.; Scheepers, M.; Bolink, H. J.; Edri, E.

    2014-08-01

    Efficient methylammonium lead iodide perovskite-based solar cells have been prepared in which the perovskite layer is sandwiched in between two organic charge transporting layers that block holes and electrons, respectively. This configuration leads to stable and reproducible devices that do not suffer from strong hysteresis effects and when optimized lead to efficiencies close to 15%. The perovskite layer is formed by using a dual-source thermal evaporation method, whereas the organic layers are processed from solution. The dual-source thermal evaporation method leads to smooth films and allows for high precision thickness variations. Devices were prepared with perovskite layer thicknesses ranging from 160 to 900 nm. The short-circuit current observed for these devices increased with increasing perovskite layer thickness. The main parameter that decreases with increasing perovskite layer thickness is the fill factor and as a result optimum device performance is obtained for perovskite layer thickness around 300 nm. However, here we demonstrate that with a slightly oxidized electron blocking layer the fill factor for the solar cells with a perovskite layer thickness of 900 nm increases to the same values as for the devices with thin perovskite layers. As a result the power conversion efficiencies for the cells with 300 and 900 nm are very similar, 12.7% and 12%, respectively.

  14. Precursor to equatorial spread-F in OI 630.0 nm dayglow

    SciTech Connect (OSTI)

    Sridharan, R.; Raju, D.P.; Raghavarao, R.; Ramarao, P.V.S.

    1994-12-15

    The authors report a correlation between 630 nm O sdayglow measurements made from India and the occurance of equatorial spread F (ESF). They observe that features of the dayglow can serve as a precursor for the appearance of ESF phenomena, with a lead time of up to 3 hours.

  15. Performance of a High-Concentration Erbium-Doped Fiber Amplifier with 100 nm Amplification Bandwidth

    SciTech Connect (OSTI)

    Hajireza, P.; Shahabuddin, N. S.; Abbasi-Zargaleh, S.; Emami, S. D.; Abdul-Rashid, H. A.; Yusoff, Z.

    2010-07-07

    Increasing demand for higher bandwidth has driven the need for higher Wavelength Division Multiplexing (WDM) channels. One of the requirements to achieve this is a broadband amplifier. This paper reports the performance of a broadband, compact, high-concentration and silica-based erbium-doped fiber amplifier. The amplifier optimized to a 2.15 m long erbium-doped fiber with erbium ion concentration of 2000 ppm. The gain spectrum of the amplifier has a measured amplification bandwidth of 100 nm using a 980 nm laser diode with power of 150 mW. This silica-based EDFA shows lower noise figure, higher gain and wider bandwidth in shorter wavelengths compared to Bismuth-based EDFA with higher erbium ion concentration of 3250 ppm at equivalent EDF length. The silica-based EDF shows peak gain at 22 dB and amplification bandwidth between 1520 nm and 1620 nm. The lowest noise figure is 5 dB. The gain is further improved with the implementation of enhanced EDFA configurations.

  16. Imaging of electrical response of NiOx under controlled environment with sub-25-nm resolution

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jacobs, Christopher B.; Ievlev, Anton V.; Collins, Liam F.; Muckley, Eric S.; Joshi, Pooran C.; Ivanov, Ilia N.

    2016-07-19

    The spatially resolved electrical response of rf-sputtered polycrystalline NiOx films composed of 40 nm crystallites was investigated under different relative humidity levels (RH). The topological and electrical properties (surface potential and resistance) were characterized using Kelvin probe force microscopy (KPFM) and conductive scanning probe microscopy at 0%, 50%, and 80% relative humidity with sub 25nm resolution. The surface potential of NiOx decreased by about 180 mV and resistance decreased in a nonlinear fashion by about 2 G when relative humidity was increased from 0% to 80%. The dimensionality of surface features obtained through autocorrelation analysis of topological, surface potential andmore » resistance maps increased linearly with increased relative humidity as water was adsorbed onto the film surface. Spatially resolved surface potential and resistance of the NiOx films were found to be heterogeneous, with distinct features that grew in size from about 60 nm to 175 nm between 0% and 80% RH levels, respectively. Here, we find that the changes in the heterogeneous character of the NiO films are consistent through the topological, surface potential, and resistance measurements, suggesting that the nanoscale surface potential and resistance properties converge with the mesoscale properties as water is adsorbed onto the NiOx film.« less

  17. EM, N.M. Officials Celebrate New Emergency Center for Waste Isolation Pilot Plant

    Broader source: Energy.gov [DOE]

    CARLSBAD, N.M. – Principal Deputy Assistant Secretary Mark Whitney joined New Mexico officials and others to mark the completion of a new state-of-the-art Waste Isolation Pilot Plant (WIPP) Emergency Operations Center in a ribbon-cutting ceremony recently.

  18. Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

    SciTech Connect (OSTI)

    Mohan, Nagaboopathy; Raghavan, Srinivasan; Manikant,; Soman, Rohith

    2015-10-07

    AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.

  19. AL2002-01.pdf | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    2-01.pdf AL2002-01.pdf PDF icon AL2002-01.pdf More Documents & Publications AL2002-04.pdf AL2002-08.pdf AL2002-06...

  20. AL2002-04.pdf | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    4.pdf AL2002-04.pdf PDF icon AL2002-04.pdf More Documents & Publications AL2004-01r2.pdf AL2002-01.pdf AL2002-08...

  1. Microsoft Word - al2007-11.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    al2007-11.doc Microsoft Word - al2007-11.doc PDF icon Microsoft Word - al2007-11.doc More Documents & Publications Acquisition Letter: AL2005-08 Microsoft Word - al2004-03.doc OPAM...

  2. ALS Operating Schedule on Google Calendar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Operating Schedule on Google Calendar Print ALS Operating Schedule Your browser does not appear to support JavaScript, but this page needs to use JavaScript to display...

  3. Al Corn Clean Fuel | Open Energy Information

    Open Energy Info (EERE)

    Corn Clean Fuel Jump to: navigation, search Name: Al-Corn Clean Fuel Place: Claremont, North Dakota Product: Al-Corn is an ethanol plant located in Claremont, North Dakota, which...

  4. Promising Magnesium Battery Research at ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Promising Magnesium Battery Research at ALS Promising Magnesium Battery Research at ALS Print Wednesday, 23 January 2013 16:59 toyota battery a) Cross-section of the in situ ...

  5. Category:Montgomery, AL | Open Energy Information

    Open Energy Info (EERE)

    Montgomery, AL Jump to: navigation, search Go Back to PV Economics By Location Media in category "Montgomery, AL" The following 16 files are in this category, out of 16 total....

  6. Direct observation of grafting interlayer phosphate in Mg/Al layered double hydroxides

    SciTech Connect (OSTI)

    Shimamura, Akihiro; Kanezaki, Eiji; Jones, Mark I.; Metson, James B.

    2012-02-15

    The grafting of interlayer phosphate in synthetic Mg/Al layered double hydroxides with interlayer hydrogen phosphate (LDH-HPO{sub 4}) has been studied by XRD, TG/DTA, FT-IR, XPS and XANES. The basal spacing of crystalline LDH-HPO{sub 4} decreases in two stages with increasing temperature, from 1.06 nm to 0.82 nm at 333 K in the first transition, and to 0.722 nm at 453 K in the second. The first stage occurs due to the loss of interlayer water and rearrangement of the interlayer HPO{sub 4}{sup 2-}. In the second transition, the interlayer phosphate is grafted to the layer by the formation of direct bonding to metal cations in the layer, accompanied by a change in polytype of the crystalline structure. The grafted phosphate becomes immobilized and cannot be removed by anion-exchange with 1-octanesulfonate. The LDH is amorphous at 743 K but decomposes to Mg{sub 3}(PO{sub 4}){sub 2}, AlPO{sub 4}, MgO and MgAl{sub 2}O{sub 4} after heated to 1273 K. - Graphical abstract: The cross section of the synthetic Mg, Al layered double hydroxides in Phase 1, with interlayer hydrogen phosphate Phase 2, and with grafted phosphate, Phase 3. Highlights: Black-Right-Pointing-Pointer The grafting of hydrogen phosphate intercalated Mg/Al-LDH has been studied. Black-Right-Pointing-Pointer The basal spacing of crystalline LDH-HPO{sub 4} decreases in two stages with increasing temperature. Black-Right-Pointing-Pointer The first decrease is due to loss of interlayer water, the second is attributed to phosphate grafting. Black-Right-Pointing-Pointer The grafted interlayer phosphate becomes immobilized and cannot be removed by anion-exchange.

  7. THE INFRARED SPECTRUM OF URANIUM HOLLOW CATHODE LAMPS FROM 850 nm to 4000 nm: WAVENUMBERS AND LINE IDENTIFICATIONS FROM FOURIER TRANSFORM SPECTRA

    SciTech Connect (OSTI)

    Redman, Stephen L.; Ramsey, Lawrence W.; Mahadevan, Suvrath [Department of Astronomy and Astrophysics, Pennsylvania State University, University Park, PA 16802 (United States); Lawler, James E. [Department of Physics, University of Wisconsin, 1150 University Avenue, Madison, WI 53706 (United States); Nave, Gillian [National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States)

    2011-08-01

    We provide new measurements of wavenumbers and line identifications of 10, 100 U I and U II near-infrared (NIR) emission lines between 2500 cm{sup -1} and 12, 000 cm{sup -1} (4000-850 nm) using archival Fourier transform spectrometer spectra from the National Solar Observatory. This line list includes isolated uranium lines in the Y, J, H, K, and L bands (0.9-1.1 {mu}m, 1.2-1.35 {mu}m, 1.5-1.65 {mu}m, 2.0-2.4 {mu}m, and 3.0-4.0 {mu}m, respectively), and provides six times as many calibration lines as thorium in the NIR spectral range. The line lists we provide enable inexpensive, commercially available uranium hollow cathode lamps to be used for high-precision wavelength calibration of existing and future high-resolution NIR spectrographs.

  8. Preparation, photoluminescent properties and luminescent dynamics of BaAlF{sub 5}:Eu{sup 2+} nanophosphors

    SciTech Connect (OSTI)

    Zhang, Wei; Hua, Ruinian; Liu, Tianqing; Zhao, Jun; Na, Liyan; Chen, Baojiu

    2014-12-15

    Graphical abstract: Rice-shaped BaAlF{sub 5}:Eu{sup 2+} nanophosphors were synthesized via one-pot hydrothermal process. The as-prepared BaAlF{sub 5}:Eu{sup 2+} are composed of many particles with an average diameter of 40 nm. When excited at 260 nm, the sharp line emission located at 361 nm of Eu{sup 2+} was observed. The optimum doping concentration of Eu{sup 2+} was confirmed to be 5 mol%. The strong ultraviolet emission of Eu{sup 2+} ions in BaAlF{sub 5}:Eu{sup 2+} nanoparticles suggests that these nanoparticles may have potential applications for sensing, solid-state lasers and spectrometer calibration. - Highlights: • BaAlF{sub 5}:Eu{sup 2+} nanophosphors were synthesized via a mild hydrothermal process. • The Van and Huang models were used to research the mechanism of concentration quenching. • The optimum doping concentration of Eu2+ was confirmed to be 5 mol%. - Abstract: Eu{sup 2+}-doped BaAlF{sub 5} nanophosphors were synthesized via a facile one-pot hydrothermal method. The final products were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and photoluminescence (PL) spectroscopy. XRD results showed that the prepared samples are single-phase. The FE-SEM and TEM images indicated that the prepared BaAlF{sub 5}:Eu{sup 2+} nanophosphors are composed of many rice-shaped particles with an average diameter of 40 nm. When excited at 260 nm, BaAlF{sub 5}:Eu{sup 2+} nanophosphors exhibit the sharp line emissions of Eu{sup 2+} at room temperature. The optimum doping concentration of Eu{sup 2+} was confirmed to be 5 mol%. The Van and Huang models were used to study the mechanism of concentration quenching and the electric dipole–dipole interaction between Eu{sup 2+} can be deduced to be a dominant for quenching fluorescence in BaAlF{sub 5}:Eu{sup 2+} nanophosphors. The strong ultraviolet emission of Eu{sup 2+} in BaAlF{sub 5}:Eu{sup 2+} nanophosphors suggests that

  9. Aluminium distribution in ZSM-5 revisited: The role of Al-Al interactions

    SciTech Connect (OSTI)

    Ruiz-Salvador, A. Rabdel; Grau-Crespo, Ricardo; Gray, Aileen E.; Lewis, Dewi W.

    2013-02-15

    We present a theoretical study of the distribution of Al atoms in zeolite ZSM-5 with Si/Al=47, where we focus on the role of Al-Al interactions rather than on the energetics of Al/Si substitutions at individual sites. Using interatomic potential methods, we evaluate the energies of the full set of symmetrically independent configurations of Al siting in a Si{sub 94}Al{sub 2}O{sub 192} cell. The equilibrium Al distribution is determined by the interplay of two factors: the energetics of the Al/Si substitution at an individual site, which tends to populate particular T sites (e.g., the T14 site), and the Al-Al interaction, which at this Si/Al maximises Al-Al distances in general agreement with Dempsey's rule. However, it is found that the interaction energy changes approximately as the inverse of the square of the distance between the two Al atoms, rather than the inverse of the distance expected if this were merely charge repulsion. Moreover, we find that the anisotropic nature of the framework density plays an important role in determining the magnitude of the interactions, which are not simply dependent on Al-Al distances. - Graphical abstract: Role of Al-Al interactions in high silica ZSM-5 is shown to be anisotropic in nature and not dependent solely on Coulombic interactions. Highlights: Black-Right-Pointing-Pointer Si-Al distribution in ZSM-5 is revisited, stressing the role of the Al-Al interaction. Black-Right-Pointing-Pointer Coulomb interactions are not the key factors controlling the Al siting. Black-Right-Pointing-Pointer Anisotropy of the framework is identified as a source of departure from Dempsey's rule.

  10. MAGNETIC FIELDS OF AN ACTIVE REGION FILAMENT FROM FULL STOKES ANALYSIS OF Si I 1082.7 nm AND He I 1083.0 nm

    SciTech Connect (OSTI)

    Xu, Z.; Liu, Y.

    2012-04-20

    Vector magnetic fields of an active region filament in the photosphere and upper chromosphere are obtained from spectro-polarimetric observations recorded with the Tenerife Infrared Polarimeter (TIP II) at the German Vacuum Tower Telescope. We apply Milne-Eddington inversions on full Stokes vectors of the photospheric Si I 1082.7 nm and the upper chromospheric He I triplet at 1083.0 nm to obtain the magnetic field vector and velocity maps in two atmosphere layers. We find that (1) a complete filament was already present in H{alpha} at the beginning of the TIP II data acquisition. Only a partially formed one, composed of multiple small threads, was present in He I. (2) The AR filament comprises two sections. One shows strong magnetic field intensities, about 600-800 G in the upper chromosphere and 800-1000 G in the photosphere. The other exhibits only comparatively weak magnetic field strengths in both layers. (3) The Stokes V signal is indicative of a dip in the magnetic field strength close to the chromospheric PIL. (4) In the chromosphere, consistent upflows are found along the PIL flanked by downflows. (5) The transversal magnetic field is nearly parallel to the PIL in the photosphere and inclined by 20 Degree-Sign -30 Degree-Sign in the chromosphere. (6) The chromospheric magnetic field around the filament is found to be in normal configuration, while the photospheric field presents a concave magnetic topology. The observations are consistent with the emergence of a flux rope with a subsequent formation of a filament.

  11. Inductively coupled plasmareactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl{sub 3} pretreatment in Cl{sub 2}/Ar plasma chemistry

    SciTech Connect (OSTI)

    Shah, Amit P.; Laskar, Masihhur R.; Azizur Rahman, A.; Gokhale, Maheshwar R.; Bhattacharya, Arnab

    2013-11-15

    Inductively coupled plasma (ICP)reactive ion etching (RIE) patterning is a standard processing step for UV and optical photonic devices based on III-nitride materials. There is little research on ICP-RIE of high Al-content AlGaN alloys and for nonpolar nitride orientations. The authors present a comprehensive study of the ICP-RIE of c- and a-plane AlGaN in Cl{sub 2}/Ar plasma over the entire Al composition range. The authors find that the etch rate decreases in general with increasing Al content, with different behavior for c- and a-plane AlGaN. They also study the effect of BCl{sub 3} deoxidizing plasma pretreatment. An ICP deoxidizing BCl{sub 3} plasma with the addition of argon is more efficient in removal of surface oxides from Al{sub x}Ga{sub 1?x}N than RIE alone. These experiments show that Al{sub x}Ga{sub 1?x}N etching is affected by the higher binding energy of AlN and the higher affinity of oxygen to aluminum compared to gallium, with oxides on a-plane AlGaN more difficult to etch as compared to oxides on c-plane AlGaN, specifically for high Al composition materials. The authors achieve reasonably high etch rate (?350 nm/min) for high Al-content materials with a smooth surface morphology at a low DC bias of ??45 VDC.

  12. Stable formation of ultrahigh power-density 248 nm channels in Xe cluster targets

    SciTech Connect (OSTI)

    Borisov, Alex B.; Racz, Ervin; Khan, Shahab F.; Poopalasingam, Sankar; McCorkindale, John C.; Boguta, John; Longworth, James W.; Rhodes, Charles K.

    2012-07-11

    The optimization of relativistic and ponderomotive self-channeling of ultra-powerful 248 nm laser pulses launched in underdense plasmas with an appropriate longitudinal gradient in the electron density profile located at the initial stage of the self-channeling leads to (1) stable channel formation and (2) highly efficient power compression producing power densities in the 10{sup 19}-10{sup 20} W/cm{sup 3} range. The comparison of theoretical studies with experimental results involving the correlation of (a) Thomson images of the electron density with (b) x-ray images of the channel morphology demonstrates that more than 90% of the incident 248 nm power can be trapped in stable channels and that this stable propagation can be extended to power levels significantly exceeding the critical power of the self-channeling process.

  13. 32.8-nm X-ray laser produced in a krypton cluster jet

    SciTech Connect (OSTI)

    Ivanova, E P; Vinokhodov, A Yu

    2013-12-31

    We have interpreted the well-known experimental quantum yield data for a 32.8-nm X-ray laser operating at the 3d{sup 9}4d (J = 0) 3d{sup 9}4p (J = 1) transition of Kr{sup 8+} with the use of gaseous krypton or a krypton cluster jet. Proceeding from our model we propose a novel scheme for the 32.8-nm laser produced in a krypton cluster jet. The quantum yield is shown to saturate for a plasma length of ?300 ?m, a krypton ion density n{sub Kr} ? (4 9) 10{sup 19} cm{sup -3}, and an electron temperature Te ? 5000 eV. In this case, the energy conversion coefficient amounts to ?5 10{sup -3} of the pump pulse energy. We propose the experimental setup for producing a highefficiency subpicosecond X-ray laser in a krypton cluster jet. (lasers)

  14. Demonstration of a GaAs-based 1550-nm continuous wave photomixer

    SciTech Connect (OSTI)

    Zhang, W.-D. Brown, E. R.; Middendorf, J. R.

    2015-01-12

    An Er:GaAs-based 1550-nm CW photomixer is demonstrated. The related mechanism is extrinsic photoconductivity with optical absorption between the localized deep levels created by the Er and the extended states above the conduction band edge of GaAs. With the power boost made possible by a fiber-coupled erbium-doped-fiber amplifier, the Er:GaAs photomixers, operating at 1550 nm, radiate THz power levels easily measured by a Golay cell, and display a power spectrum having a −3 dB roll-off frequency of 307 GHz. This corresponds to a photocarrier lifetime of 520 fs, in good agreement with a previous measurement of the bandwidth of the same material in a photoconductive switch.

  15. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  16. X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy investigation of Al-related dipole at the HfO{sub 2}/Si interface

    SciTech Connect (OSTI)

    Zhu, L. Q.; Barrett, N.; Jegou, P.

    2009-01-15

    The presence of an ultrathin oxide layer at the high-k/SiO{sub 2} interface may result in an interfacial dipole related to the specific high-k dielectric used for the gate stacks. 1 nm HfO{sub 2}/x nmAl{sub 2}O{sub 3}/SiO{sub 2}/Si stacks with different x values (x=0, 0.4, 0.8, 1.2) have been prepared by atomic layer deposition. Using photoelectron spectroscopy, an Al-related interfacial dipole in the HfO{sub 2}/Al{sub 2}O{sub 3}/SiO{sub 2} gate stack has been identified. X-ray photoelectron spectroscopy analysis shows that the dipole is correlated with the formation of an interfacial Al-silicate. The dipole is located at the Al-silicate interface between Al{sub 2}O{sub 3} and SiO{sub 2}, and its strength increases with the increase in Al{sub 2}O{sub 3} thickness because of Al silicate growth. Such Al-related interfacial dipole should have potential applications in future positive metal-oxide-semiconductor devices.

  17. Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al{sub 2}O{sub 3} films and Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks

    SciTech Connect (OSTI)

    Keuning, W.; Weijer, P. van de; Lifka, H.; Kessels, W. M. M.; Creatore, M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Philips Research Laboratories, High Tech Campus 4, P.O. Box WAG12, 5656 AE Eindhoven (Netherlands); Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

    2012-01-15

    Al{sub 2}O{sub 3} thin films synthesized by plasma-enhanced atomic layer deposition (ALD) at room temperature (25 deg. C) have been tested as water vapor permeation barriers for organic light emitting diode devices. Silicon nitride films (a-SiN{sub x}:H) deposited by plasma-enhanced chemical vapor deposition served as reference and were used to develop Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks. On the basis of Ca test measurements, a very low intrinsic water vapor transmission rate of {<=} 2 x 10{sup -6} g m{sup -2} day{sup -1} and 4 x 10{sup -6} g m{sup -2} day{sup -1} (20 deg. C/50% relative humidity) were found for 20-40 nm Al{sub 2}O{sub 3} and 300 nm a-SiN{sub x}:H films, respectively. The cathode particle coverage was a factor of 4 better for the Al{sub 2}O{sub 3} films compared to the a-SiN{sub x}:H films and an average of 0.12 defects per cm{sup 2} was obtained for a stack consisting of three barrier layers (Al{sub 2}O{sub 3}/a-SiN{sub x}:H/Al{sub 2}O{sub 3}).

  18. Museum LOS ALAMOS, N.M., Sept. 5, 2013-Los Alamos National Laboratory Director Charlie

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    lab director to link science education, national security in TEDxABQ talk September 5, 2013 Watch live stream at home or at Bradbury Science Museum LOS ALAMOS, N.M., Sept. 5, 2013-Los Alamos National Laboratory Director Charlie McMillan will discuss the linkage between national security and early education in science, technology, engineering, and mathematics (STEM) during a presentation at the TEDxABQ conference in Albuquerque on Saturday, Sept. 7. Although the event is expected to sell out

  19. Michaela G. Farr and Joshua S. Stein Sandia National Laboratory, Albuquerque, NM, 87185, United States

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Spatial Variations in Temperature across a Photovoltaic Array Michaela G. Farr and Joshua S. Stein Sandia National Laboratory, Albuquerque, NM, 87185, United States ABSTRACT - The efficiency of any photovoltaic device is significantly affected by its operating temperature. It is therefore of great interest to the PV industry to have accurate models of module and array temperatures. Existing PV performance models generally assume that module temperature is a function of plane-of-array irradiance,

  20. LOS ALAMOS, N.M., April 2, 2015-Randy Fraser of Los Alamos National Laboratory's

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Randy Fraser receives NNSA 2014 Security Professional of the Year award April 2, 2015 LOS ALAMOS, N.M., April 2, 2015-Randy Fraser of Los Alamos National Laboratory's Security, Safeguards and Emergency Response Directorate received a 2014 National Nuclear Security Administration Security Professional of the Year award. "I am extremely honored to have the privilege of presenting these amazing individuals with the Bradley A. Peterson Federal and Contractor Security Professional of the Year

  1. LOS ALAMOS, N.M., April 7, 2016-Los Alamos and Sandia National Laboratories

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking inside plutonium April 7, 2016 New Mexico labs go where no one has gone before LOS ALAMOS, N.M., April 7, 2016-Los Alamos and Sandia National Laboratories have recently conducted plutonium experiments using Sandia's pulsed power Z Machine that have reached regions of pressure, temperature and density in plutonium never before explored in the laboratory. "With Z we have very carefully reached pressure, temperature and density regimes that are relevant to those seen during a nuclear

  2. LOS ALAMOS, N.M., Aug. 24, 2016-Eight Los Alamos National Laboratory innovations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    as R&D 100 Award finalists August 24, 2016 Eight technologies offer breakthroughs in energy, computing, cybersecurity, health, materials and particle accelerators LOS ALAMOS, N.M., Aug. 24, 2016-Eight Los Alamos National Laboratory innovations were selected as finalists for the 2016 R&D 100 Awards, which honor the top 100 proven technological advances of the past year as determined by a panel selected by R&D Magazine. The finalists, with projects covering energy, computing, health

  3. LOS ALAMOS, N.M., Dec. 15, 2014-The Los Alamos National Laboratory Fellows list

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laboratory Fellows for 2014 December 15, 2014 Honorees span sciences in physics, astrophysics, chemistry LOS ALAMOS, N.M., Dec. 15, 2014-The Los Alamos National Laboratory Fellows list expands by five this week as a new group of high achievers is named. The honorees this year are Christopher L. Fryer, Herbert O. Funsten, John C. Gordon, Jaqueline L. Kiplinger and David S. Moore. "The sustained scientific excellence demonstrated by the work of Chris, Herb, John, Jaqueline and David

  4. LOS ALAMOS, N.M., Dec. 17, 2015-Scientists at Los Alamos National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    more accurately tracks gases for underground nuclear explosion detection December 17, 2015 Model uniquely pairs seismic data with radionuclide fluid-flow models LOS ALAMOS, N.M., Dec. 17, 2015-Scientists at Los Alamos National Laboratory have developed a new, more thorough method for detecting underground nuclear explosions (UNEs) by coupling two fundamental elements-seismic models with gas-flow models-to create a more complete picture of how an explosion's evidence (radionuclide gases) seep to

  5. LOS ALAMOS, N.M., Dec. 22, 2014-Los Alamos National Laboratory today

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    science news of 2014 December 22, 2014 Biosurveillance, secure computing, alternative energy, unique capabilities highlight the year LOS ALAMOS, N.M., Dec. 22, 2014-Los Alamos National Laboratory today announced its annual top science stories of 2014. The 12 stories selected from diverse disciplines supporting Los Alamos's national security mission range from transferring fool-proof computer encryption techniques to market, to using social media for forecasting diseases, creating a virtual human

  6. LOS ALAMOS, N.M., Dec. 3, 2015-Los Alamos National Laboratory molecular

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    explore new strategies to improve photosynthesis, increase energy yields December 6, 2015 First talk is Monday, Dec. 7 in Albuquerque LOS ALAMOS, N.M., Dec. 3, 2015-Los Alamos National Laboratory molecular biologist Richard Sayre discusses how improving photosynthetic efficiency may result in substantial increases in crop yields during two Frontiers in Science lectures titled "Hacking Photosynthesis: Growing Plants to Power Our Engines and Feed the World" beginning Dec. 7 in

  7. LOS ALAMOS, N.M., Feb. 23, 2015-Nine Los Alamos National Laboratory scientists

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    join prestigious ranks of APS fellows February 23, 2015 LOS ALAMOS, N.M., Feb. 23, 2015-Nine Los Alamos National Laboratory scientists are new Fellows of the American Physical Society. Cristian Batista, Malcolm Boshier, Dana Dattelbaum, Stephen Doorn, Michelle Espy, George Rodriguez, Avadh Saxena, Sergei Tretiak and Lin Yin are the new honorees. "Selection as American Physical Society fellows is de facto proof of the vibrant engagement Los Alamos scientists are having with the larger

  8. LOS ALAMOS, N.M., July 1, 2014-Los Alamos National Laboratory employees

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    27,000 pledged by Los Alamos National Laboratory employees in 2014 LAESF scholarship drive July 1, 2014 Investing in success of Northern New Mexico students LOS ALAMOS, N.M., July 1, 2014-Los Alamos National Laboratory employees pledged a record $327,000 during the recently completed 2014 Los Alamos Employees' Scholarship Fund (LAESF) drive. The drive encourages Laboratory employees, retirees, and subcontract personnel to donate to a fund that awards college scholarships to Northern New Mexico

  9. LOS ALAMOS, N.M., July 24, 2014-Dipen Sinha of Los Alamos National Laboratory's

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Acoustics topic of upcoming Frontiers in Science series July 24, 2014 Tapping sound waves to address energy, national security challenges LOS ALAMOS, N.M., July 24, 2014-Dipen Sinha of Los Alamos National Laboratory's Materials Synthesis and Integrated Devices group will discuss acoustics and its applications, including how it is possible to use sound to solve problems in health, national security and for industry, in a series of Frontiers in Science Lectures beginning July 29 at Crossroads

  10. LOS ALAMOS, N.M., June 18, 2014-Los Alamos National Laboratory today

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fukushima with cosmic rays should speed cleanup June 18, 2014 Los Alamos to partner with Toshiba to remotely and safely peer inside nuclear reactors LOS ALAMOS, N.M., June 18, 2014-Los Alamos National Laboratory today announced an impending partnership with Toshiba Corporation to use a Los Alamos technique called muon tomography to safely peer inside the cores of the Fukushima Daiichi reactors and create high-resolution images of the damaged nuclear material inside without ever breaching the

  11. LOS ALAMOS, N.M., June 21, 2016-Two Los Alamos National Laboratory projects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    energy technology projects from Los Alamos gain DOE funding June 21, 2016 Groundwater restoration and fractured rock insights supported LOS ALAMOS, N.M., June 21, 2016-Two Los Alamos National Laboratory projects are among technologies supported in today's U.S. Department of Energy (DOE) announcement of nearly $16 million in funding to help businesses move promising energy technologies from DOE's National Laboratories to the marketplace. "Los Alamos research expands the options for energy

  12. LOS ALAMOS, N.M., June 24, 2015-Scientists at Los Alamos National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ocean mixing reveals insight on climate June 24, 2015 Eddies pull carbon emissions into deep ocean, new model simulates complex process LOS ALAMOS, N.M., June 24, 2015-Scientists at Los Alamos National Laboratory have developed a computer model that clarifies the complex processes driving ocean mixing in the vast eddies that swirl across hundreds of miles of open ocean. "The model enables us to study the important processes of ocean storms, which move heat and carbon from the atmosphere

  13. LOS ALAMOS, N.M., March 24, 2015-Los Alamos National Laboratory mechanical

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    computer simulation improves offshore drill rig safety March 24, 2015 LOS ALAMOS, N.M., March 24, 2015-Los Alamos National Laboratory mechanical and thermal engineering researchers' efforts to solve the complex problem of how ocean currents affect the infrastructure of floating oilrigs and their computational fluid dynamics (CFD) numerical simulations received recognition from ANSYS Inc., a company that provides computer-based engineering simulation capabilities."Because energy resources

  14. LOS ALAMOS, N.M., May 13, 2013-Today, Los Alamos National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Domestic production of medical isotope Mo-99 moves a step closer May 13, 2013 Los Alamos team produces molybdenum-99 from irradiation of low enriched uranium solution LOS ALAMOS, N.M., May 13, 2013-Today, Los Alamos National Laboratory announced that for the first time, irradiated low-enriched uranium (LEU) fuel has been recycled and reused for molybdenum-99 (Mo-99) production, with virtually no losses in Mo-99 yields or uranium recovery. This demonstrates the viability of the separation

  15. LOS ALAMOS, N.M., May 22, 2013-Los Alamos National Laboratory's Bradbury

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    partnering in national Blue Star Museums program May 22, 2013 Free admission for active duty military, their family members LOS ALAMOS, N.M., May 22, 2013-Los Alamos National Laboratory's Bradbury Science Museum is again partnering with the National Endowment for the Arts, Blue Star Families Foundation and the Department of Defense in the Blue Star Museums program to host active duty military personnel and their families from Memorial Day, May 27, through Labor Day, Sept. 2. "In this the

  16. LOS ALAMOS, N.M., Nov. 10, 2015-Two Los Alamos National Laboratory employees

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Helping New Mexico small businesses earns recognition for Los Alamos National Lab employees November 10, 2015 Program provides access to technical expertise and laboratory capabilities LOS ALAMOS, N.M., Nov. 10, 2015-Two Los Alamos National Laboratory employees were recently recognized in an awards ceremony for providing their technical expertise and access to lab capabilities to help small businesses through the New Mexico Small Business Assistance Program. Don Quintana, a group leader within

  17. LOS ALAMOS, N.M., Nov. 19, 2013-Researchers at Los Alamos National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    virus spread and evolution studied through computer modeling November 19, 2013 LOS ALAMOS, N.M., Nov. 19, 2013-Researchers at Los Alamos National Laboratory are investigating the complex relationships between the spread of the HIV virus in a population (epidemiology) and the actual, rapid evolution of the virus (phylogenetics) within each patient's body. "We have developed novel ways of estimating epidemics dynamics such as who infected whom, and the true population incidence of infection

  18. LOS ALAMOS, N.M., Oct. 26, 2015-Scientists from Los Alamos National Laboratory,

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanoscale, multidimensional artificial magnet created October 26, 2015 Embargoed for 10 a.m. Mountain, Oct. 26, 2015 Tiny magnets could work in sensors, information encoding LOS ALAMOS, N.M., Oct. 26, 2015-Scientists from Los Alamos National Laboratory, in collaboration with a group at the University of Illinois at Urbana-Champaign, the Lawrence Berkeley National Laboratory's Advanced Light Source and with other researchers nationwide, have realized a nanoscale, artificial magnet by arranging an

  19. LOS ALAMOS, N.M., October 9, 2012-Researchers at Los Alamos National

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    crystallography aids drug design October 9, 2012 Precisely tailored pharmaceuticals could reduce medical side effects LOS ALAMOS, N.M., October 9, 2012-Researchers at Los Alamos National Laboratory have used neutron crystallography for the first time to determine the structure of a clinical drug in complex with its human target enzyme. Seeing the detailed structure of the bonded components provides insights into developing more effective drugs with fewer side effects for patients. The atomic

  20. LOS ALAMOS, N.M., Aug. 24, 2016-Nine Los Alamos National Laboratory innovations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    impact innovations honored as R&D 100 Award finalists August 24, 2016 Nine technologies offer breakthroughs in energy, computing, cybersecurity, health, materials and particle accelerators LOS ALAMOS, N.M., Aug. 24, 2016-Nine Los Alamos National Laboratory innovations were selected as finalists for the 2016 R&D 100 Awards, which honor the top 100 proven technological advances of the past year as determined by a panel selected by R&D Magazine. The finalists, with projects covering

  1. Change LOS ALAMOS, N.M., May 19, 2015-Researchers at Los Alamos National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Drought-induced tree mortality accelerating in forests May 19, 2015 Los Alamos' paper published in Nature Climate Change LOS ALAMOS, N.M., May 19, 2015-Researchers at Los Alamos National Laboratory have found that drought and heat-induced tree mortality is accelerating in many forest biomes as a consequence of a warming climate in their paper "Darcy's law predicts widespread forest mortality under climate warming," published in the journal Nature Climate Change. "The warming

  2. DOE Zero Energy Ready Home Case Study 2013: Palo Duro Homes, Inc., Albuquerque, NM

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Palo Duro Homes, Inc. Albuquerque, NM BUILDING TECHNOLOGIES OFFICE The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specifi ed in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Advanced technologies are designed in to give you

  3. OMVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics (title change from A)

    SciTech Connect (OSTI)

    HAN,JUNG; FIGIEL,JEFFREY J.; PETERSEN,GARY A.; MYERS JR.,SAMUEL M.; CRAWFORD,MARY H.; BANAS,MICHAEL ANTHONY; HEARNE,SEAN JOSEPH

    2000-01-18

    We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GrdnN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

  4. Effects of amines on formation of sub-3 nm particles and their subsequent growth

    SciTech Connect (OSTI)

    Yu H.; McGraw R.; Lee S.-H.

    2012-01-28

    Field observations and quantum chemical calculations suggest that amines can be important for formation of nanometer size particles. Amines and ammonia often have common atmospheric emission sources and the similar chemical and physical properties. While the effects of ammonia on aerosol nucleation have been previously investigated, laboratory studies of homogeneous nucleation involving amines are lacking. We have made kinetics studies of multicomponent nucleation (MCN) with sulfuric acid, water, ammonia and amines under conditions relevant to the atmosphere. Low concentrations of aerosol precursors were measured with chemical ionization mass spectrometers (CIMS) to provide constrained precursor concentrations needed for nucleation. Particle sizes larger than {approx}2 nm were measured with a nano-differential mobility analyzer (nano-DMA), and number concentrations of particles larger than {approx}1 nm were measured with a particle size magnifier (PSM). Our observations provide the laboratory evidence that amines indeed can participate in aerosol nucleation and growth at the molecular cluster level. The enhancement of particle number concentrations due to several atmospherically relevant amine compounds and ammonia were related to the basicity of these compounds, indicating that acid-base reactions may contribute to the formation of sub-3 nm particles.

  5. Effect of Grain Refinement on the Mechanical Behaviour of an Al6061 Alloy at Cryogenic Temperatures

    SciTech Connect (OSTI)

    Moreno-Valle, E.; Sabirov, I.; Murashkin, M. Yu.; Valiev, R. Z.; Bobruk, E. V.; Perez-Prado, M. T.

    2011-05-04

    A solution treated coarse grained (CG) Al6061 was subjected to high pressure torsion (HPT) at room temperature resulting in the formation of a homogeneous ultra-fine grained (UFG) microstructure with an average grain size of 170 nm. Tensile tests were performed at room temperature (RT) and liquid nitrogen temperature (LNT). The as-HPT UFG Al6061 alloy shows an increased strength at both RT and LNT. The decrease of testing temperature results in increased flow stress and in enhanced elongation to failure in both CG and UFG samples. The ratio {sigma}{sub y}{sup LNT}/{sigma}{sub y}{sup RT} was found to be larger for the CG Al6061 than for the UFG Al6061. Both surface relief and fracture surface observations were performed. The effect of the grain size and of the testing temperature on the mechanical behaviour of the Al6061 alloy is analyzed in detail. It is suggested that the solute atoms play an important role in the plastic deformation of the UFG Al6061 alloy.

  6. Intercalation of p-methycinnamic acid anion into Zn-Al layered double hydroxide to improve UV aging resistance of asphalt

    SciTech Connect (OSTI)

    Peng, Chao; Dai, Jing; Yu, Jianying; Yin, Jian

    2015-02-15

    A UV absorber, p-methycinnamic acid (PMCA), was intercalated into Zn-Al layered double hydroxide (LDH) by calcination recovery. Fourier transform infrared spectroscopy showed that the PMCA anions completely replaced the CO{sub 3}{sup 2−} anions in the interlayer galleries of Zn-Al-LDH containing PMCA anions (Zn-Al-PMCA-LDH). X-ray diffraction and transmission electron microscopy showed that the interlayer distance increased from 0.78 nm to 1.82 nm after the substitution of PMCA anions for CO{sub 3}{sup 2−} anions. The similar diffraction angles of the CO{sub 3}{sup 2−} anion-containing Zn-Al-LDH (Zn-Al-CO{sub 3}{sup 2−}-LDH) and the Zn-Al-CO{sub 3}{sup 2−}-LDH/styrene–butadiene–styrene (SBS) modified asphalt implied that the asphalt molecules do not enter into the LDH interlayer galleries to form separated-phase structures. The different diffraction angles of Zn-Al-PMCA-LDH and Zn-Al-PMCA-LDH/SBS modified asphalt indicated that the asphalt molecules penetrated into the LDH interlayer galleries to form an expanded-phase structure. UV-Vis absorbance analyses showed that Zn-Al-PMCA-LDH was better able to block UV light due to the synergistic effects of PMCA and Zn-Al-LDH. Conventional physical tests and atomic force microscopy images of the SBS modified asphalt, Zn-Al-CO{sub 3}{sup 2−}-LDH/SBS modified asphalt and Zn-Al-PMCA-LDH/SBS modified asphalt before and after UV aging indicated that Zn-Al-PMCA-LDH improved the UV aging resistance of SBS modified asphalts.

  7. Growth and stress-induced transformation of zinc blende AlN layers in Al-AlN-TiN multilayers

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Nan; Yadav, Satyesh K.; Wang, Jian; Liu, Xiang -Yang; Misra, Amit

    2015-12-18

    We report that AlN nanolayers in sputter deposited {111}Al/AlN/TiN multilayers exhibit the metastable zinc-blende-structure (z-AlN). Based on density function theory calculations, the growth of the z-AlN is ascribed to the kinetically and energetically favored nitridation of the deposited aluminium layer. In situ nanoindentation of the as-deposited {111}Al/AlN/TiN multilayers in a high-resolution transmission electron microscope revealed the z-AlN to wurzite AlN phase transformation through collective glide of Shockley partial dislocations on every two {111} planes of the z-AlN.

  8. A facile method for nickel catalyst immobilization on ultra fine Al{sub 2}O{sub 3} powders

    SciTech Connect (OSTI)

    Zhang, T.; Wen, G.; Huang, X.X.; Zhong, B.; Zhang, X.D.; Bai, H.W.; Yu, H.M.

    2010-07-15

    A pure nickel coating has been successfully plated on the surface of ultra fine Al{sub 2}O{sub 3} particles via a facile electroless plating method. Coating morphology and crystallite size can be tailored by pH values. Dense coating with the maximum crystallite size of 24 nm was obtained at pH 11.0 and porous coating with the minimum crystallite size of 15 nm was obtained at pH value 12.5. The plated powders have been demonstrated to be an effective catalyst for growing boron nitride nanotubes.

  9. Electron density distribution and disordered crystal structure of 15R-SiAlON, SiAl{sub 4}O{sub 2}N{sub 4}

    SciTech Connect (OSTI)

    Banno, Hiroki; Hanai, Takaaki; Asaka, Toru; Kimoto, Koji; Fukuda, Koichiro

    2014-03-15

    The crystal structure of SiAl{sub 4}O{sub 2}N{sub 4} was characterized by laboratory X-ray powder diffraction (CuKα{sub 1}). The title compound is trigonal with space group R3-bar m. The hexagonal unit-cell dimensions (Z=3) are a=0.301332(3) nm, c=4.18616(4) nm and V=0.3291825(5) nm{sup 3}. The initial structural model was successfully derived by the charge-flipping method and further refined by the Rietveld method. The final structural model showed the positional disordering of one of the three (Si,Al) sites. The maximum-entropy method-based pattern fitting (MPF) method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensity partitioning was minimized. The reliability indices calculated from the MPF were R{sub wp}=5.05%, S (=R{sub wp}/R{sub e})=1.21, R{sub p}=3.77%, R{sub B}=1.29% and R{sub F}=1.01%. The disordered crystal structure was successfully described by overlapping three types of domains with ordered atom arrangements. The distribution of atomic positions in one of the three types of domains can be achieved in the space group R3-bar m. The atom arrangements in the other two types of domains are noncentrosymmetrical with the space group R3m. These two structural configurations are related by the pseudo-symmetry inversion. -- Graphical abstract: A bird's eye view of electron densities up to 75.3% (0.133 nm{sup −3}) of the maximum on the plane parallel to (110) with the corresponding atomic arrangements of SiAl{sub 4}O{sub 2}N{sub 4}. Highlights: • Crystal structure of SiAl{sub 4}O{sub 2}N{sub 4} is determined by laboratory X-ray powder diffraction. • The atom arrangements are represented by the split-atom model. • The maximum-entropy method-based pattern fitting method is used to confirm the validity of the model. • The disordered structure is described by overlapping three types of domains with ordered atom arrangements.

  10. IBM Probes Material Capabilities at the ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    IBM Probes Material Capabilities at the ALS IBM Probes Material Capabilities at the ALS Print Wednesday, 12 February 2014 11:05 Vanadium dioxide, one of the few known materials that acts like an insulator at low temperatures but like a metal at warmer temperatures, is a somewhat futuristic material that could yield faster and much more energy-efficient electronic devices. Researchers from IBM's forward-thinking Spintronic Science and Applications Center (SpinAps) recently used the ALS to gain

  11. IBM Probes Material Capabilities at the ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    IBM Probes Material Capabilities at the ALS IBM Probes Material Capabilities at the ALS Print Wednesday, 12 February 2014 11:05 Vanadium dioxide, one of the few known materials that acts like an insulator at low temperatures but like a metal at warmer temperatures, is a somewhat futuristic material that could yield faster and much more energy-efficient electronic devices. Researchers from IBM's forward-thinking Spintronic Science and Applications Center (SpinAps) recently used the ALS to gain

  12. Capacitance-voltage characteristics of (Al/Ti)/Al{sub 2}O{sub 3}/n-GaN MIS structures

    SciTech Connect (OSTI)

    Ivanov, P. A. Potapov, A. S.; Nikolaev, A. E.; Lundin, V. V.; Sakharov, A. V.; Tsatsulnikov, A. F.; Afanas’ev, A. V.; Romanov, A. A.; Osachev, E. V.

    2015-08-15

    The capacitance-voltage characteristics of (Al/Ti)/Al{sub 2}O{sub 3}/n-GaN metal—insulator-semiconductor (MIS) structures are measured and analyzed. n-Type GaN films are grown on sapphire (0001) substrates by the metal-organic chemical vapor deposition method. An aluminum-oxide layer with a thickness of 60 nm is deposited onto the surface of GaN by the method of atomic-layer deposition from the gas phase. Metallic contacts are deposited by the electron-beam evaporation of titanium and aluminum in vacuum. According to the measurement results, the breakdown-field strength of the oxide, its dielectric constant, and the integrated electron density of states at the oxide-semiconductor interface are 5 × 10{sup 6} V/cm, 7.5, and 3 × 10{sup 12} cm{sup −2}, respectively.

  13. Ringleader: Cobber Lam, ALS Systems Administrator

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cobber Lam, ALS Systems Administrator Print Cobber Lam started working at Berkeley Lab 10 years ago as a student assistant, while attending college at Cal State East Bay. Within two months, he was assigned to the ALS and has stayed put ever since. He used to be matrixed via IT, but last year he became a direct ALS employee. ALS IT support is divided between Lam and Tim Kellogg, with Lam being more forward-facing, dealing with users and staff, and Kellogg working on the back-end mostly with

  14. IBM Probes Material Capabilities at the ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Researchers from IBM's forward-thinking Spintronic Science and Applications Center (SpinAps) recently used the ALS to gain greater insight into vanadium dioxide's unusual phase ...

  15. Al Turi Biomass Facility | Open Energy Information

    Open Energy Info (EERE)

    NEEDS 2006 Database Retrieved from "http:en.openei.orgwindex.php?titleAlTuriBiomassFacility&oldid397128" Feedback Contact needs updating Image needs updating...

  16. Microsoft Word - AL2005-03.doc

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AL 2005-03 Acquisition Regulation Date 100804 ACQUISITION LETTER This Acquisition Letter is issued under the authority of the DOE and NNSA Procurement Executives. Subject:...

  17. April 27, 2015-Special ALS Colloquium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Years Janos Kirz, ALS Abstract Rntgen's great discovery became an instant public sensation. Fascination with the "new kind of rays" that could reveal the structure of opaque...

  18. Al Tayyar Energy | Open Energy Information

    Open Energy Info (EERE)

    Jump to: navigation, search Name: Al Tayyar Energy Place: Abu Dhabi, United Arab Emirates Sector: Renewable Energy Product: Provides development capital and equity investments...

  19. Microsoft Word - al2006-12.doc

    Broader source: Energy.gov (indexed) [DOE]

    AL-2006-12 (092906) 7 III. What Procedures Ensure Effective Audit Management? Some strategies for managing required audit activity include: 1. Contracting officers should...

  20. Crystallographic Consulting Brings Research to the ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of the participating research team (PRT) members at the Berkeley Center for Structural Biology (BCSB), which operates five ALS beamlines. As PRT members, companies are...

  1. Al Furat Petroleum Company | Open Energy Information

    Open Energy Info (EERE)

    Furat Petroleum Company Name: Al Furat Petroleum Company Place: Damascus, Syria Product: oil and hydrocarbon gas Year Founded: 1985 Phone Number: 00963-11- (6183333) Website:...

  2. ALS Reveals New State of Matter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Reveals New State of Matter ALS Reveals New State of Matter Print Wednesday, 13 October 2010 00:00 ALS user groups from Princeton and Stanford have been making waves this past year with several high-profile papers and extensive news coverage of their work on a new state of matter embodied by "topological insulators," materials that conduct electricity only on their surfaces. First identified at the ALS in 2007 by a Princeton team led by M. Zahid Hasan, topological insulators have

  3. Microsoft Word - Final MR AL.doc

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy No. AL 2009-01 Acquisition Regulation Date: 10062008 ACQUISITION ... Subject: Management Reserve and Contingency References: FAR Subpart 15.4 Contract Pricing ...

  4. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

    SciTech Connect (OSTI)

    Nepal, N.; Qadri, S. B.; Hite, J. K.; Mahadik, N. A.; Mastro, M. A.; Eddy, C. R. Jr.

    2013-08-19

    Thin AlN layers were grown at 200650 C by plasma assisted atomic layer epitaxy (PA-ALE) simultaneously on Si(111), sapphire (1120), and GaN/sapphire substrates. The AlN growth on Si(111) is self-limited for trimethyaluminum (TMA) pulse of length > 0.04 s, using a 10 s purge. However, the AlN nucleation on GaN/sapphire is non-uniform and has a bimodal island size distribution for TMA pulse of ?0.03 s. The growth rate (GR) remains almost constant for T{sub g} between 300 and 400 C indicating ALE mode at those temperatures. The GR is increased by 20% at T{sub g} = 500 C. Spectroscopic ellipsometry (SE) measurement shows that the ALE AlN layers grown at T{sub g} ? 400 C have no clear band edge related features, however, the theoretically estimated band gap of 6.2 eV was measured for AlN grown at T{sub g} ? 500 C. X-ray diffraction measurements on 37 nm thick AlN films grown at optimized growth conditions (T{sub g} = 500 C, 10 s purge, 0.06 s TMA pulse) reveal that the ALE AlN on GaN/sapphire is (0002) oriented with rocking curve full width at the half maximum (FWHM) of 670 arc sec. Epitaxial growth of crystalline AlN layers by PA-ALE at low temperatures broadens application of the material in the technologies that require large area conformal growth at low temperatures with thickness control at the atomic scale.

  5. Scientists to Meet in Carlsbad, NM for Hard Rock Lab Task Force

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scientists From Nine Countries to Converge On Carlsbad for Technical Meeting CARLSBAD, N.M., February 7, 2000 - Scientists from nine countries will converge on this southeastern New Mexico city February 7-10 to share their views during the 13 th Äspö Hard Rock Laboratory Task Force Meeting on Modelling of Groundwater Flow and Transport of Solutes. "Carlsbad is quickly becoming recognized as the international center for repository technology," said Dr. Inés Triay, manager of the U.S.

  6. Other Locales W. Clements Los Alamos National Laboratory Los Alamos, NM 87545

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    W. Clements Los Alamos National Laboratory Los Alamos, NM 87545 T. Ackerman Pennsylvania State University University Park, PA 16802 D. Renne National Renewable Energy Laboratory Golden, CO 80401-3393 The Tropical Western Pacific Locale 100 S to 100 N of the equator and from 1300 E to the dateline. Phased implementation is scheduled to begin in late 1993. The main activity of the TWP project in the next year is to define the particular science to be conducted and to select an appropriate site or

  7. LOS ALAMOS, N.M., Aug. 21, 2013-The High-Altitude Water Cherenkov (HAWC)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    gamma-ray observatory begins operations at Sierra Negra volcano in the state of Puebla, Mexico August 21, 2013 New site to observe supernovas and supermassive black holes LOS ALAMOS, N.M., Aug. 21, 2013-The High-Altitude Water Cherenkov (HAWC) Gamma Ray Observatory has begun formal operations at its site in Mexico. HAWC is designed to study the origin of very high-energy cosmic rays and observe the most energetic objects in the known universe. This extraordinary observatory, using a unique

  8. LOS ALAMOS, N.M., August 7, 2013-Los Alamos National Laboratory scientist

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lab's Frontiers in Science lectures focus on epigenetics August 7, 2013 Is behavior hardwired by DNA or a product of environment? LOS ALAMOS, N.M., August 7, 2013-Los Alamos National Laboratory scientist Karissa Sanbonmatsu, will discuss epigenetics in a series of Frontiers in Science lectures beginning Tuesday, Aug. 13, at the New Mexico Museum of Natural History and Science in Albuquerque. The 7 p.m. talk, titled "Nature, Nurture or Neither: The New Science of Epigenetics," focuses

  9. LOS ALAMOS, N.M., Dec. 14, 2015-Los Alamos National Laboratory's portable

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    named Top 10 Breakthrough of 2015 by Physics World magazine December 20, 2015 LOS ALAMOS, N.M., Dec. 14, 2015-Los Alamos National Laboratory's portable MRI was named one of the Top 10 Breakthroughs of the Year by Physics World, the member magazine of the Institute of Physics. Portable MRI, also called Battlefield MRI (bMRI), uses ultra-low-field magnetic resonance imaging to create images of injured soft tissues, such as the brain. "Hospital-based MRI devices are big and expensive,"

  10. LOS ALAMOS, N.M., January 15, 2013-Researchers from Los Alamos National

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    follows the 'Yellowknife Road' to Martian wet area January 15, 2013 Instrument confirms presence of gypsum and related minerals LOS ALAMOS, N.M., January 15, 2013-Researchers from Los Alamos National Laboratory and the French Space Agency have tracked a trail of minerals that point to the prior presence of water at the Curiosity rover site on Mars. Researchers from the Mars Science Laboratory's ChemCam team today described how the laser instrument aboard the Curiosity Rover-an SUV-sized vehicle

  11. LOS ALAMOS, N.M., July 12, 2013 - Los Alamos National Laboratory Director

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Importance of science education to national security will be Los Alamos director's topic at TEDxABQ July 12, 2013 Importance of science education to national security will be Los Alamos director's topic at TEDxABQ LOS ALAMOS, N.M., July 12, 2013 - Los Alamos National Laboratory Director Charlie McMillan will be one of 17 speakers at this year's TEDxABQ, event organizers announced this week. TEDxABQ, scheduled for Saturday, September 7 at Popejoy Hall, is an independently organized event in

  12. LOS ALAMOS, N.M., July 27, 2015- Four Los Alamos National Laboratory projects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Los Alamos projects selected as R&D 100 Award finalists July 27, 2015 LOS ALAMOS, N.M., July 27, 2015- Four Los Alamos National Laboratory projects have been selected as finalists for the 2015 R&D 100 awards, which honor the top 100 proven technological advances of the past year as determined by a panel selected by R&D Magazine. The Los Alamos finalists are: LARS: Lab-scale Asynchronous Radiographic System, PipeLIBS: A Self-Contained Elemental Analysis Tool for the Oil Industry,

  13. LOS ALAMOS, N.M., March 18, 2015-Scientists at Los Alamos National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    creates bioinformatics tool for metagenome analysis March 18, 2015 'GOTTCHA' tool could aid ID of co-infections in medical samples LOS ALAMOS, N.M., March 18, 2015-Scientists at Los Alamos National Laboratory have developed a new method for DNA analysis of microbial communities such as those found in the ocean, the soil, and our own guts. "Metagenomics is the study of entire microbial communities using genomics, such as when you sequence the DNA of a whole community of organisms at

  14. LOS ALAMOS, N.M., March 31, 2014-Los Alamos National Laboratory climate

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Forests and climate change focus of Frontiers in Science lectures March 31, 2014 It's not easy staying green... LOS ALAMOS, N.M., March 31, 2014-Los Alamos National Laboratory climate researcher Nate McDowell will discuss climate change and its effects on forest systems in a series of Frontiers in Science lectures beginning Wednesday, April 2 at the New Mexico Museum of Natural History and Science in Albuquerque. "The data we have suggests that forests of the Southwest and many other areas

  15. LOS ALAMOS, N.M., Nov. 3, 2015-Nina Lanza, of Los Alamos National Laboratory's

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hunting for meteorites in Antarctica November 3, 2015 Los Alamos scientist part of NASA's select few LOS ALAMOS, N.M., Nov. 3, 2015-Nina Lanza, of Los Alamos National Laboratory's Space and Remote Sensing group, was selected as one of eight members for the 2015-2016 field campaign of the Antarctica Search for Meteorites (ANSMET) program, which is supported by NASA. "These meteorites can help us understand the formation and evolution of our solar system," said Lanza. "They come

  16. LOS ALAMOS, N.M., Oct. 22, 2015-Los Alamos National Laboratory explosives

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rings of Fire: New explosives provide enhanced safety, high energy October 22, 2015 LOS ALAMOS, N.M., Oct. 22, 2015-Los Alamos National Laboratory explosives chemist David Chavez has synthesized a pair of novel molecules, one possessing a unique fused three-ring structure. These materials could usher in a new class of explosives that provide high-energy output with enhanced safety. "There is a general trend that the higher the performance of an energetic material, the more sensitive the

  17. LOS ALAMOS, N.M., Oct. 23, 2014-Los Alamos National Laboratory scientists

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    rocket design flight tested October 23, 2014 New rocket propellant and motor design offers high performance and safety LOS ALAMOS, N.M., Oct. 23, 2014-Los Alamos National Laboratory scientists recently flight tested a new rocket design that includes a high-energy fuel and a motor design that also delivers a high degree of safety. "What we're trying to do is break the performance versus sensitivity curve, and make a rocket that's both very high-energy, as well as very safe," said Bryce

  18. LOS ALAMOS, N.M., Oct. 31, 2013-Los Alamos National Laboratory scientist

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Matter, antimatter and surviving the big bang is topic of Lab's next Frontiers in Science lecture October 31, 2013 Talk begins at 7 p.m. and open to public LOS ALAMOS, N.M., Oct. 31, 2013-Los Alamos National Laboratory scientist Vincenzo Cirigliano asks the question, How did we survive the big bang? in a series of Frontiers in Science lectures beginning Monday, Nov. 4, in the Duane Smith Auditorium at Los Alamos High School. "Particles and antiparticles were produced in equal numbers in the

  19. LOS ALAMOS, N.M., Sept. 17, 2015-Scientists at Los Alamos National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    insights into HIV-1 vaccine design September 17, 2015 Los Alamos researchers model alternate ideas for an HIV vaccine LOS ALAMOS, N.M., Sept. 17, 2015-Scientists at Los Alamos National Laboratory have created a computational model that could change the way that researchers look at possibilities for an HIV-1 vaccine. "An effective HIV-1 vaccine has proven elusive, partly due to the difficulty of causing an immune response that can neutralize the diverse viral strains circulating in the human

  20. Poly(ethylene terephthalate) surface modification by deep UV (172 nm) irradiation

    SciTech Connect (OSTI)

    Zhengmao Zhua; Michael J. Kelley

    2004-09-01

    The prospects of obtaining desired surface-mediated characteristics while retaining bulk-mediated physical properties and avoiding potential environmental issues with wet chemical technology lends considerable appeal to photochemical approaches. We investigated the response of poly(ethylene terephthalate) to 172 nm UV from a xenon excimer lamp in the absence of oxygen, using XPS, ToF/SIMS, and AFM. The main effects are increasing loss of a C=O moiety and carboxylic acid production without effect on topography up to a total fluence of 16 J/cm2. Above this level no further change in surface chemistry was evident, but surfaces became rougher, suggesting the onset of etching.

  1. 1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier

    SciTech Connect (OSTI)

    Nguyen, Ba-Son [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Lin, Jen-Fin [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Perng, Dung-Ching, E-mail: dcperng@ee.ncku.edu.tw [Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)

    2014-02-24

    We demonstrate the thinnest ever reported Cu diffusion barrier, a 1-nm-thick graphene tri-layer. X-ray diffraction patterns and Raman spectra show that the graphene is thermally stable at up to 750?C against Cu diffusion. Transmission electron microscopy images show that there was no inter-diffusion in the Cu/graphene/Si structure. Raman analyses indicate that the graphene may have degraded into a nanocrystalline structure at 750?C. At 800?C, the perfect carbon structure was damaged, and thus the barrier failed. The results of this study suggest that graphene could be the ultimate Cu interconnect diffusion barrier.

  2. Damage thresholds of thin film materials and high reflectors at 248 nm

    SciTech Connect (OSTI)

    Rainer, F.; Lowdermilk, W.H.; Milam, D.; Carniglia, C.K.; Hart, T.T.; Lichtenstein, T.L.

    1982-01-01

    Twenty-ns, 248-nm KrF laser pulses were used to measure laser damage thresholds for halfwave-thick layers of 15 oxide and fluoride coating materials, and for high reflectance coatings made with 13 combinations of these materials. The damage thresholds of the reflectors and single-layer films were compared to measurements of several properties of the halfwave-thick films to determine whether measurements of these properties of single-layer films to determine whether measurements of these properties of single-layer films were useful for identifying materials for fabrication of damage resistant coatings.

  3. Picosecond 14.7 nm interferometry of high intensity laser-produced plasmas

    SciTech Connect (OSTI)

    Dunn, J; Filevich, J; Smith, R F; Moon, S J; Rocca, J J; Keenan, R; Nilsen, J; Shlyaptsev, V N; Hunter, J R; Ng, A; Marconi, M C

    2004-10-14

    We have developed a compact, 14.7 nm, sub-5 ps x-ray laser source at LLNL together with a Mach-Zehnder type Diffraction Grating Interferometer built at Colorado State University for probing dense, high intensity laser-produced plasmas. The short wavelength and pulse length of the probe reduces refraction and absorption effects within the plasma and minimizes plasma motion blurring. This unique diagnostic capability gives precise 2-D density profile snapshots and is generating new data for rapidly evolving laser-heated plasmas. A review of the results from dense, mm-scale line focus plasma experiments will be described with detailed comparisons to hydrodynamic simulations.

  4. CY08 SNL_NM ASER_8_10_09.indb

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    //IA * .~ r'fIA \b1i Sandia Site Office ///IV&.~~~ National Nuclear Security Administration P.o. Box 5400 Albuquerque, New Mexico 87185-5400 AUG 262009 To Distribution: Enclosed is a copy of the Calendar Year (CY) 2008 Annual Site Environmental Report for the U. S. Department of Energy (DOE), National Nuclear Security Administration (NNSA), Sandia National Laboratories/Nev..: rV:iexico (SNL/NM) for your use as appropriate. This report has recently been approved for public distribution. The

  5. AL 2014-06 ACQUISITION LETTERS REMAINING IN EFFECT | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AL 2014-06 ACQUISITION LETTERS REMAINING IN EFFECT AL 2014-06 ACQUISITION LETTERS REMAINING IN EFFECT AL 2014-06 ACQUISITION LETTERS REMAINING IN EFFECT Acquisition Letters (AL)...

  6. Microsoft Word - al2005-04.doc | Department of Energy

    Energy Savers [EERE]

    al2005-04.doc Microsoft Word - al2005-04.doc PDF icon Microsoft Word - al2005-04.doc More Documents & Publications AL2005-04ClassDeviation.pdf Microsoft Word - Matrixpart2.doc...

  7. Microsoft Word - AL2004-02.doc | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Microsoft Word - AL2004-02.doc More Documents & Publications Microsoft Word - AL2005-02.doc Microsoft Word - al2005-04.doc Microsoft Word - AL-Omnibus FY 2009 Apr 22 2009 all...

  8. Microsoft Word - AL2006-08.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    8.doc Microsoft Word - AL2006-08.doc PDF icon Microsoft Word - AL2006-08.doc More Documents & Publications AL2007-05.doc&0; Microsoft Word - AL2005-14.doc Microsoft Word - ...

  9. Microsoft Word - AL2005-03.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    5-03.doc Microsoft Word - AL2005-03.doc PDF icon Microsoft Word - AL2005-03.doc More Documents & Publications Microsoft Word - AL2005-01.doc Microsoft Word - AL2006-08.doc ...

  10. Microsoft Word - al2005-06.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    - al2005-06.doc PDF icon Microsoft Word - al2005-06.doc More Documents & Publications Microsoft Word - AL2006-01.doc OPAM Policy Acquisition Guides Acquisition Letter: AL2005-08...

  11. Microsoft Word - AL2008-05.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Microsoft Word - AL2008-05.doc Microsoft Word - AL2008-05.doc Microsoft Word - AL2008-05.doc More Documents & Publications Microsoft Word - AL 2010-07 Acquistion Letters Remaining...

  12. Microsoft Word - al2004-03.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    al2004-03.doc Microsoft Word - al2004-03.doc PDF icon Microsoft Word - al2004-03.doc More Documents & Publications Acquisition Letter: AL2005-08 OPAM Policy Acquisition Guides ...

  13. Microsoft Word - AL2005-10.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AL2005-10.doc Microsoft Word - AL2005-10.doc Microsoft Word - AL2005-10.doc (133.11 KB) More Documents & Publications Microsoft Word - AL2005-16.doc Audit Report: IG-0860 Microsoft ...

  14. AL2010-01.pdf | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1.pdf AL2010-01.pdf PDF icon AL2010-01.pdf More Documents & Publications G Microsoft Word - AL-Omnibus FY 2009 Apr 22 2009 all sections.doc Microsoft Word - AL-Consolidated Approps...

  15. AL2007-09.pdf | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    7-09.pdf AL2007-09.pdf PDF icon AL2007-09.pdf More Documents & Publications AL2007-04.pdf RL-2007OMCPIA.pdf AL2007-06.pdf...

  16. AL2007-04.pdf | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    4.pdf AL2007-04.pdf PDF icon AL2007-04.pdf More Documents & Publications Preliminary Notice of Violation, BWXT Y-12 LLC - EA-2007-04 AL2007-05.doc&0; AL2007-09...

  17. AL2007-06.pdf | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6.pdf AL2007-06.pdf PDF icon AL2007-06.pdf More Documents & Publications AL2007-04.pdf AL2007-09.pdf RL-2007OMCPIA...

  18. Nonlinear bleaching, absorption, and scattering of 532-nm-irradiated plasmonic nanoparticles

    SciTech Connect (OSTI)

    Liberman, V.; Sworin, M.; Kingsborough, R. P.; Geurtsen, G. P.; Rothschild, M.

    2013-02-07

    Single-pulse irradiation of Au and Ag suspensions of nanospheres and nanodisks with 532-nm 4-ns pulses has identified complex optical nonlinearities while minimizing material damage. For all materials tested, we observe competition between saturable absorption (SA) and reverse SA (RSA), with RSA behavior dominating for intensities above {approx}50 MW/cm{sup 2}. Due to reduced laser damage in single-pulse experiments, the observed intrinsic nonlinear absorption coefficients are the highest reported to date for Au nanoparticles. We find size dependence to the nonlinear absorption enhancement for Au nanoparticles, peaking in magnitude for 80-nm nanospheres and falling off at larger sizes. The nonlinear absorption coefficients for Au and Ag spheres are comparable in magnitude. On the other hand, the nonlinear absorption for Ag disks, when corrected for volume fraction, is several times higher. These trends in nonlinear absorption are correlated to local electric field enhancement through quasi-static mean-field theory. Through variable size aperture measurements, we also separate nonlinear scattering from nonlinear absorption. For all materials tested, we find that nonlinear scattering is highly directional and that its magnitude is comparable to that of nonlinear absorption. These results indicate methods to improve the efficacy of plasmonic nanoparticles as optical limiters in pulsed laser systems.

  19. Quantum yield for carbon monoxide production in the 248 nm photodissociation of carbonyl sulfide (OCS)

    SciTech Connect (OSTI)

    Zhao, Z.; Stickel, R.E.; Wine, P.H. [Georgia Institute of Technology, Atlanta, GA (United States)] [Georgia Institute of Technology, Atlanta, GA (United States)

    1995-03-01

    Tunable diode laser absorption spectroscopy has been coupled with excimer laser flash photolysis to measure the quantum yield for CO production from 248 nm photodissociation of carbonyl sulfide (OCS) relative to the well known quantum yield for CO production from 248 nm photolysis of phosgene (Cl{sub 2}CO). The temporal resolution of the experiments was sufficient to distinguish CO formed directly by photodissociation from that formed by subsequent S({sup 3}P{sub j}) reaction with OCS. Under the experimental conditions employed, CO formation via the fast S({sup 1}D{sub 2})+OCS reaction was minimal. Measurements at 297K and total pressures from 4 to 100 Torr N{sub 2}+N{sub 2}O show the CO yield to be greater than 0.95 and most likely unity. This result suggests that the contribution of OCS as a precursor to the lower stratospheric sulfate aerosol layer is somewhat larger than previously thought. 25 refs., 1 fig., 2 tabs.

  20. Simultaneous enhancement of carrier mobility and concentration via tailoring of Al-chemical states in Al-ZnO thin films

    SciTech Connect (OSTI)

    Kumar, Manish Wen, Long; Sahu, Bibhuti B.; Han, Jeon Geon

    2015-06-15

    Simultaneously achieving higher carriers concentration and mobility is a technical challenge against up-scaling the transparent-conductive performances of transparent-conductive oxides. Utilizing one order higher dense (∼1 × 10{sup 11} cm{sup −3}) plasmas (in comparison to the conventional direct current plasmas), highly c-axis oriented Al-doped ZnO films have been prepared with precise control over relative composition and chemical states of constituting elements. Tailoring of intrinsic (O vacancies) and extrinsic (ionic Al and zero-valent Al) dopants provide simultaneous enhancement in mobility and concentration of charge carriers. Room-temperature resistivity as low as 4.89 × 10{sup −4} Ω cm along the carrier concentration 5.6 × 10{sup 20} cm{sup −3} is obtained in 200 nm thick transparent films. Here, the control of atomic Al reduces the charge trapping at grain boundaries and subdues the effects of grain boundary scattering. A mechanism based on the correlation between electron-hole interaction and carrier mobility is proposed for degenerately doped wide band-gap semiconductors.

  1. Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN

    SciTech Connect (OSTI)

    Kita, Takashi; Ishizu, Yuta; Tsuji, Kazuma; Harada, Yukihiro; Chigi, Yoshitaka; Nishimoto, Tetsuro; Tanaka, Hiroyuki; Kobayashi, Mikihiro; Ishihara, Tsuguo; Izumi, Hirokazu

    2015-04-28

    We studied energy transfer from AlN to doped Gd{sup 3+} ions as a function of the post-thermal annealing temperature. Gd-doped AlN thin films were deposited on fused-silica substrates using a reactive radio-frequency magnetron sputtering technique. The film is a c-axis oriented polycrystal. The intra-orbital electron transition in Gd{sup 3+} showed an atomically sharp luminescence at 3.9 eV (318 nm). The photoluminescence (PL) excitation spectrum exhibited a resonant peak, indicating efficient energy transfer from the host AlN crystal to Gd{sup 3+} ions. The PL intensity increases approximately ten times by thermal annealing. The PL decay lifetime becomes long with annealing, and mid-gap luminescence relating to the crystal defects in AlN was also found to be reduced by annealing. These results suggest that energy dissipation of excited carriers in AlN was suppressed by annealing, and the efficiency of energy transfer into Gd{sup 3+} was improved.

  2. Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films

    SciTech Connect (OSTI)

    Banerjee, P; Lee, W. J.; Bae, K. R.; Lee, Sang Bok; Rubloff, Gary W

    2010-01-01

    Al-doped ZnO (AZO) films of ∼100 nm thickness with various Aldoping were prepared at 150 °C by atomic layer deposition on quartz substrates. At low Aldoping, the films were strongly textured along the [100] direction, while at higher Aldoping the films remained amorphous. Atomic force microscopy results showed that Al–O cycles when inserted in a ZnOfilm, corresponding to a few atomic percent Al, could remarkably reduce the surface roughness of the films. Hall measurements revealed a maximum mobility of 17.7 cm{sup 2} /V s . Film resistivity reached a minima of 4.4×10{sup −3}  Ω cm whereas the carrier concentration reached a maxima of 1.7×10{sup 20}  cm{sup −3} , at 3 at. % Al. The band gap of AZO films varied from 3.23 eV for undoped ZnOfilms to 3.73 eV for AZO films with 24.6 at. % Al. Optical transmittance over 80% was obtained in the visible region. The detrimental impact of increased Al resulting in decreased conductivity due to doping past 3.0 at. % is evident in the x-ray diffraction data, as an abrupt increase in the optical band gap and as a deviation from the Burstein–Moss effect.

  3. Material-dependent amorphization and epitaxial crystallization in ion-implanted AlAs/GaAs layer structures

    SciTech Connect (OSTI)

    Cullis, A.G.; Chew, N.G.; Whitehouse, C.R. ); Jacobson, D.C.; Poate, J.M.; Pearton, S.J.

    1989-09-18

    When AlAs/GaAs layer samples are subjected to Ar{sup +} ion bombardment at liquid-nitrogen temperature, it is shown that very different damage structures are produced in the two materials. While the GaAs is relatively easily amorphized, the AlAs is quite resistant to damage accumulation and remains crystalline for the ion doses employed in these investigations. Epitaxial regrowth of buried amorphous GaAs layers of thicknesses up to 150 nm can be induced by rapid thermal annealing. It is demonstrated that differences in the initial damage state have a strong influence upon the nature of lattice defects produced by annealing.

  4. Deep ultraviolet distributed Bragg reflectors based on graded composition AlGaN alloys

    SciTech Connect (OSTI)

    Brummer, Gordie; Nothern, Denis; Nikiforov, A. Yu.; Moustakas, T. D.

    2015-06-01

    Distributed Bragg reflectors (DBRs) with peak reflectivity at approximately 280 nm, based on compositionally graded Al{sub x}Ga{sub 1−x}N alloys, were grown on 6H-SiC substrates by plasma-assisted molecular beam epitaxy. DBRs with square, sinusoidal, triangular, and sawtooth composition profiles were designed with the transfer matrix method. The crystal structure of these DBRs was studied with high-resolution x-ray diffraction of the (1{sup ¯}015) reciprocal lattice point. The periodicity of the DBR profiles was confirmed with cross-sectional Z-contrast scanning transmission electron microscopy. The peak reflectance of these DBRs with 15.5 periods varies from 77% to 56% with corresponding full width at half maximum of 17–14 nm. Coupled mode analysis was used to explain the dependence of the reflectivity characteristics on the profile of the graded composition.

  5. Noise behavior of a 180-nm CMOS SOI technology for detector front-end electronics

    SciTech Connect (OSTI)

    Re, Valerio; Gaioni, Luigi; Manghisoni, Massimo; Ratti, Lodovico; Speziali, Valeria; Traversi, Gianluca; Yarema, Ray; /Fermilab

    2008-01-01

    This paper is motivated by the growing interest of the detector and readout electronics community towards silicon-on-insulator CMOS processes. Advanced SOI MOSFETs feature peculiar electrical characteristics impacting their performance with respect to bulk CMOS devices. Here we mainly focus on the study of these effects on the noise parameters of the transistors, using experimental data relevant to 180 nm fully depleted SOI devices as a reference. The comparison in terms of white and 1/f noise components with bulk MOSFETs with the same minimum feature size gives a basis of estimate for the signal-to-noise ratio achievable in detector front-end integrated circuits designed in an SOI technology.

  6. Time and spectrum-resolving multiphoton correlator for 300900 nm

    SciTech Connect (OSTI)

    Johnsen, Kelsey D.; Thibault, Marilyne; Jennewein, Thomas; Kolenderski, Piotr; Scarcella, Carmelo; Tosi, Alberto

    2014-10-14

    We demonstrate a single-photon sensitive spectrometer in the visible range, which allows us to perform time-resolved and multi-photon spectral correlation measurements at room temperature. It is based on a monochromator composed of two gratings, collimation optics, and an array of single photon avalanche diodes. The time resolution can reach 110 ps and the spectral resolution is 2 nm/pixel, limited by the design of the monochromator. This technique can easily be combined with commercial monochromators and can be useful for joint spectrum measurements of two photons emitted in the process of parametric down conversion, as well as time-resolved spectrum measurements in optical coherence tomography or medical physics applications.

  7. 1.5 nm fabrication of test patterns for characterization of metrological systems

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Babin, Sergey; Calafiore, Giuseppe; Peroz, Christophe; Conley, Raymond; Bouet, Nathalie; Cabrini, Stefano; Chan, Elaine; Lacey, Ian; McKinney, Wayne R.; Yashchuk, Valeriy V.; et al

    2015-11-06

    Any metrology tool is only as good as it is calibrated. The characterization of metrology systems requires test patterns at a scale about ten times smaller than the measured features. The fabrication of patterns with linewidths down to 1.5 nm is described. The test sample was designed in such a way that the distribution of linewidths appears to be random at any location. This pseudorandom test pattern is used to characterize dimensional metrology equipment over its entire dynamic range by extracting the modulation transfer function of the system. The test pattern contains alternating lines of silicon and tungsten silicide, eachmore » according to its designed width. As a result, the fabricated test samples were imaged using a transmission electron microscope, a scanning electron microscope, and an atomic force microscope. (C) 2015 American Vacuum Society.« less

  8. 1.5 nm fabrication of test patterns for characterization of metrological systems

    SciTech Connect (OSTI)

    Babin, Sergey; Calafiore, Giuseppe; Peroz, Christophe; Conley, Raymond; Bouet, Nathalie; Cabrini, Stefano; Chan, Elaine; Lacey, Ian; McKinney, Wayne R.; Yashchuk, Valeriy V.; Vladar, Andras E.

    2015-11-06

    Any metrology tool is only as good as it is calibrated. The characterization of metrology systems requires test patterns at a scale about ten times smaller than the measured features. The fabrication of patterns with linewidths down to 1.5 nm is described. The test sample was designed in such a way that the distribution of linewidths appears to be random at any location. This pseudorandom test pattern is used to characterize dimensional metrology equipment over its entire dynamic range by extracting the modulation transfer function of the system. The test pattern contains alternating lines of silicon and tungsten silicide, each according to its designed width. As a result, the fabricated test samples were imaged using a transmission electron microscope, a scanning electron microscope, and an atomic force microscope. (C) 2015 American Vacuum Society.

  9. Ion generation and CPC detection efficiency studies in sub 3-nm size range

    SciTech Connect (OSTI)

    Kangasluoma, J.; Junninen, H.; Sipilae, M.; Kulmala, M.; Petaejae, T.; Lehtipalo, K.; Mikkilae, J.; Vanhanen, J.; Attoui, M.; Worsnop, D.

    2013-05-24

    We studied the chemical composition of commonly used condensation particle counter calibration ions with a mass spectrometer and found that in our calibration setup the negatively charged ammonium sulphate, sodium chloride and tungsten oxide are the least contaminated whereas silver on both positive and negative and the three mentioned earlier in positive mode are contaminated with organics. We report cut-off diameters for Airmodus Particle Size Magnifier (PSM) 1.1, 1.3, 1.4, 1.6 and 1.6-1.8 nm for negative sodium chloride, ammonium sulphate, tungsten oxide, silver and positive organics, respectively. To study the effect of sample relative humidity on detection efficiency of the PSM we used different humidities in the differential mobility analyzer sheath flow and found that with increasing relative humidity also the detection efficiency of the PSM increases.

  10. Wavelength and Intensity Dependence of Short Pulse Laser Xenon Double Ionization between 500 and 2300 nm

    SciTech Connect (OSTI)

    Gingras, G.; Tripathi, A.; Witzel, B.

    2009-10-23

    The wavelength and intensity dependence of xenon ionization with 50 fs laser pulses has been studied using time-of-flight mass spectrometry. We compare the ion yield distribution of singly and doubly charged xenon with the Perelomov-Popov-Terent'ev (PPT) theory, Perelomov, Popov, and Terent'ev, Zh. Eksp. Teor. Fiz. 50, 1393 (1966) [Sov. Phys. JETP 23, 924 (1966)], in the regime between 500 and 2300 nm. The intensity dependence for each wavelength is measured in a range between 1x10{sup 13} and 1x10{sup 15} W/cm{sup 2}. The Xe{sup +}-ion signal is in good agreement with the PPT theory at all used wavelengths. In addition we demonstrate that ionic 5s5p{sup 6} {sup 2}S state is excited by an electron impact excitation process and contributes to the nonsequential double ionization process.

  11. High power terahertz generation using 1550 nm plasmonic photomixers

    SciTech Connect (OSTI)

    Berry, Christopher W.; Hashemi, Mohammad R.; Jarrahi, Mona; Preu, Sascha; Lu, Hong; Gossard, Arthur C.

    2014-07-07

    We present a 1550 nm plasmonic photomixer operating under pumping duty cycles below 10%, which offers significantly higher terahertz radiation power levels compared to previously demonstrated photomixers. The record-high terahertz radiation powers are enabled by enhancing the device quantum efficiency through use of plasmonic contact electrodes, and by mitigating thermal breakdown at high optical pump power levels through use of a low duty cycle optical pump. The repetition rate of the optical pump can be specifically selected at a given pump duty cycle to control the spectral linewidth of the generated terahertz radiation. At an average optical pump power of 150 mW with a pump modulation frequency of 1 MHz and pump duty cycle of 2%, we demonstrate up to 0.8 mW radiation power at 1 THz, within each continuous wave radiation cycle.

  12. Structural distortions in 5-10 nm silver nanoparticles under high pressure

    SciTech Connect (OSTI)

    Koski, Kristie J.; Kamp, Noelle M.; Kunz, Martin; Knight, Jason K.; Alivisatos, A.P.; Smith, R.K.

    2008-10-13

    We present experimental evidence that silver nanoparticles in the size range of 5-10 nm undergo a reversible structural transformation under hydrostatic pressures up to 10 GPa. We have used x-ray diffraction with a synchrotron light source to investigate pressure-dependent and size-dependent trends in the crystal structure of silver nanoparticles in a hydrostatic medium compressed in a diamond-anvil cell. Results suggest a reversible linear pressure-dependent rhombohedral distortion which has not been previously observed in bulk silver. We propose a mechanism for this transition that considers the bond-length distribution in idealized multiply twinned icosahedral particles. To further support this hypothesis, we also show that similar measurements of single-crystal platinum nanoparticles reveal no such distortions.

  13. Dense wavelength multiplexing of 1550 nm QKD with strong classical channels in reconfigurable networking environments

    SciTech Connect (OSTI)

    Rosenberg, Danna; Peterson, Charles G; Dallmann, Nicholas; Hughes, Richard J; Mccabe, Kevin P; Nordholt, Jane E; Tyagi, Hush T; Peters, Nicholas A; Toliver, Paul; Chapman, Thomas E; Runser, Robert J; Mcnown, Scott R

    2008-01-01

    To move beyond dedicated links and networks, quantum communications signals must be integrated into networks carrying classical optical channels at power levels many orders of magnitude higher than the quantum signals themselves. We demonstrate transmission of a 1550-nm quantum channel with up to two simultaneous 200-GHz spaced classical telecom channels, using ROADM (reconfigurable optical <1dd drop multiplexer) technology for multiplexing and routing quantum and classical signals. The quantum channel is used to perform quantum key distribution (QKD) in the presence of noise generated as a by-product of the co-propagation of classical channels. We demonstrate that the dominant noise mechanism can arise from either four-wave mixing or spontaneous Raman scattering, depending on the optical path characteristics as well <1S the classical channel parameters. We quantity these impairments and discuss mitigation strategies.

  14. Sub-50 nm metrology on extreme ultra violet chemically amplified resist—A systematic assessment

    SciTech Connect (OSTI)

    Maas, D. J. Herfst, R.; Veldhoven, E. van; Fliervoet, T.; Meessen, J.; Vaenkatesan, V.; Sadeghian, H.

    2015-10-15

    With lithographic patterning dimensions decreasing well below 50 nm, it is of high importance to understand metrology at such small scales. This paper presents results obtained from dense arrays of contact holes (CHs) with various Critical Dimension (CD) between 15 and 50 nm, as patterned in a chemically amplified resist using an ASML EUV scanner and measured at ASML and TNO. To determine the differences between various (local) CD metrology techniques, we conducted an experiment using optical scatterometry, CD-Scanning Electron Microscopy (CD-SEM), Helium ion Microscopy (HIM), and Atomic Force Microscopy (AFM). CD-SEM requires advanced beam scan strategies to mitigate sample charging; the other tools did not need that. We discuss the observed main similarities and differences between the various techniques. To this end, we assessed the spatial frequency content in the raw images for SEM, HIM, and AFM. HIM and AFM resolve the highest spatial frequencies, which are attributed to the more localized probe-sample interaction for these techniques. Furthermore, the SEM, HIM, and AFM waveforms are analyzed in detail. All techniques show good mutual correlation, albeit the reported CD values systematically differ significantly. HIM systematically reports a 25% higher CD uniformity number than CD-SEM for the same arrays of CHs, probably because HIM has a higher resolution than the CD-SEM used in this assessment. A significant speed boost for HIM and AFM is required before these techniques are to serve the demanding industrial metrology applications like optical critical dimension and CD-SEM do nowadays.

  15. April 27, 2015-Special ALS Colloquium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    April 27, 2015-Special ALS Colloquium April 27, 2015-Special ALS Colloquium Print Wednesday, 22 April 2015 13:19 Special Event on Monday, April 27 @ 12 noon, USB 15-253 X-Ray Microscopy: The First 120 Years Janos Kirz, ALS Abstract Röntgen's great discovery became an instant public sensation. Fascination with the "new kind of rays" that could reveal the structure of opaque objects swept the world in 1896. Fifty years later it was widely recognized that the short wavelength of the

  16. ALS Reveals New State of Matter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Reveals New State of Matter Print ALS user groups from Princeton and Stanford have been making waves this past year with several high-profile papers and extensive news coverage of their work on a new state of matter embodied by "topological insulators," materials that conduct electricity only on their surfaces. First identified at the ALS in 2007 by a Princeton team led by M. Zahid Hasan, topological insulators have been the subject of intense interest, based on unusual quantum

  17. ALS Reveals New State of Matter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Reveals New State of Matter Print ALS user groups from Princeton and Stanford have been making waves this past year with several high-profile papers and extensive news coverage of their work on a new state of matter embodied by "topological insulators," materials that conduct electricity only on their surfaces. First identified at the ALS in 2007 by a Princeton team led by M. Zahid Hasan, topological insulators have been the subject of intense interest, based on unusual quantum

  18. Summary Slides of ALS Industry Highlights

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industry Highlights Print No. Slide Beamline Full Web Highlight ALSNews Volume 19 HP Gains Insight with Innovative ALS Tools 11.0.2, 5.3.2.2 05.11.2016 Vol. 372 18 Collaboration Produces World's Best Metrology Tool 6.1.2 01.27.2016 Vol. 369 17 Takeda Advances Diabetes Research at ALS 5.0.2, 5.0.3 06.02.2015 Vol. 364 16 Metrology for Next-Generation Nanopatterning 7.3.3, 11.0.1 01.28.2015 Vol. 360 15 Caribou Biosciences Has Roots at ALS - 09.24.2014 Vol. 357 13 Lithium-Battery Dendrite Growth: A

  19. ALS Reveals New State of Matter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Reveals New State of Matter Print ALS user groups from Princeton and Stanford have been making waves this past year with several high-profile papers and extensive news coverage of their work on a new state of matter embodied by "topological insulators," materials that conduct electricity only on their surfaces. First identified at the ALS in 2007 by a Princeton team led by M. Zahid Hasan, topological insulators have been the subject of intense interest, based on unusual quantum

  20. ALS Reveals New State of Matter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Reveals New State of Matter Print ALS user groups from Princeton and Stanford have been making waves this past year with several high-profile papers and extensive news coverage of their work on a new state of matter embodied by "topological insulators," materials that conduct electricity only on their surfaces. First identified at the ALS in 2007 by a Princeton team led by M. Zahid Hasan, topological insulators have been the subject of intense interest, based on unusual quantum

  1. ALS Reveals New State of Matter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Reveals New State of Matter Print ALS user groups from Princeton and Stanford have been making waves this past year with several high-profile papers and extensive news coverage of their work on a new state of matter embodied by "topological insulators," materials that conduct electricity only on their surfaces. First identified at the ALS in 2007 by a Princeton team led by M. Zahid Hasan, topological insulators have been the subject of intense interest, based on unusual quantum

  2. ALS Reveals New State of Matter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Reveals New State of Matter Print ALS user groups from Princeton and Stanford have been making waves this past year with several high-profile papers and extensive news coverage of their work on a new state of matter embodied by "topological insulators," materials that conduct electricity only on their surfaces. First identified at the ALS in 2007 by a Princeton team led by M. Zahid Hasan, topological insulators have been the subject of intense interest, based on unusual quantum

  3. ALS Reveals New State of Matter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Reveals New State of Matter Print ALS user groups from Princeton and Stanford have been making waves this past year with several high-profile papers and extensive news coverage of their work on a new state of matter embodied by "topological insulators," materials that conduct electricity only on their surfaces. First identified at the ALS in 2007 by a Princeton team led by M. Zahid Hasan, topological insulators have been the subject of intense interest, based on unusual quantum

  4. Effect of heterostructure design on carrier injection and emission characteristics of 295?nm light emitting diodes

    SciTech Connect (OSTI)

    Mehnke, Frank Kuhn, Christian; Stellmach, Joachim; Rothe, Mark-Antonius; Reich, Christoph; Ledentsov, Nikolay; Pristovsek, Markus; Wernicke, Tim; Kolbe, Tim; Lobo-Ploch, Neysha; Rass, Jens; Kneissl, Michael

    2015-05-21

    The effects of the heterostructure design on the injection efficiency and external quantum efficiency of ultraviolet (UV)-B light emitting diodes (LEDs) have been investigated. It was found that the functionality of the Al{sub x}Ga{sub 1?x}N:Mg electron blocking layer is strongly influenced by its aluminum mole fraction x and its magnesium doping profile. By comparing LED electroluminescence, quantum well photoluminescence, and simulations of LED heterostructure, we were able to differentiate the contributions of injection efficiency and internal quantum efficiency to the external quantum efficiency of UV LEDs. For the optimized heterostructure using an Al{sub 0.7}Ga{sub 0.3}N:Mg electron blocking layer with a Mg to group III ratio of 4% in the gas phase the electron leakage currents are suppressed without blocking the injection of holes into the multiple quantum well active region. Flip chip mounted LED chips have been processed achieving a maximum output power of 3.5 mW at 290?mA and a peak external quantum efficiency of 0.54% at 30?mA.

  5. EA-1906: Operations, Consolidation, and Upgrades at the Office of Secure Transportation Western Command Site, Albuquerque, NM

    Office of Energy Efficiency and Renewable Energy (EERE)

    This EA evaluates environmental impacts associated with the siting and construction of several proposed buildings, including a new vehicle maintenance facility and mobile equipment maintenance building (and their support structures) at the Western Command Site, Albuquerque, NM.

  6. Multilayer X-ray mirrors for the (4.4-5)-nm carbon-window spectral region

    SciTech Connect (OSTI)

    Andreev, S. S.; Barysheva, M. M.; Vainer, Yu. A.; Gaikovich, P. K.; Pariev, D. E. Pestov, A. E.; Salashchenko, N. N.; Chkhalo, N. I.

    2013-05-15

    Cr/C-based multilayer X-ray mirrors intended for the reflection of X-ray radiation in the 'carbon-window' spectral region ({lambda} = 4.4-5 nm) are fabricated and studied. The structures are formed by magnetron sputtering at different deposition parameters. Under normal incidence, record reflection coefficients up to 15% are reached. The structural parameters of the mirrors are investigated by reflectometry at wavelengths of 0.154 and 4.47 nm.

  7. A polarity-driven nanometric luminescence asymmetry in AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Tizei, L. H. G. Meuret, S.; March, K.; Kociak, M.; Hestroffer, K.; Auzelle, T.; Daudin, B.

    2014-10-06

    Group III Nitrides nanowires are well suited materials for the design of light emitting devices. The internal electric field created by spontaneaous and piezoelectric polarizations in these materials poses some difficulties, but also possible solutions, towards this goal. Here, we report on the high spatial asymmetry of the cathodoluminescence intensity across a GaN quantum well embedded in an AlN nanowire, when a 60 keV, 1 nm wide electron beam is scanned over this heterostructure. This asymmetry is remarkable between positions at different sides of the quantum well. We interpret this asymmetry as originating from the different drift directions of carriers due to the internal electric field. This interpretation is corroborated by the direct determination of the polarity with convergent beam electron diffraction. A precise knowledge of hole mobility and diffusion coefficients would allow an estimate of the electric field in the AlN segment of the nanowire.

  8. Spontaneously intermixed Al-Mg barriers enable corrosion-resistant Mg/SiC multilayer coatings

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Soufli, Regina; Fernandez-Perea, Monica; Baker, Sherry L.; Robinson, Jeff C.; Alameda, Jennifer; Walton, Christopher C.

    2012-07-24

    Magnesium/silicon carbide (Mg/SiC) has the potential to be the best-performing reflective multilayercoating in the 25–80 nm wavelength region but suffers from Mg-related corrosion, an insidious problem which completely degrades reflectance. We have elucidated the origins and mechanisms of corrosion propagation within Mg/SiC multilayers. Based on our findings, we have demonstrated an efficient and simple-to-implement corrosion barrier for Mg/SiC multilayers. In conclusion, the barrier consists of nanometer-scale Mg and Al layers that intermix spontaneously to form a partially amorphous Al-Mg layer and is shown to prevent atmospheric corrosion while maintaining the unique combination of favorable Mg/SiC reflective properties.

  9. Preparation, structural and optical characterization of ZnO, ZnO: Al nanopowder

    SciTech Connect (OSTI)

    Mohan, R. Raj; Rajendran, K.; Sambath, K.

    2014-01-28

    In this paper, ZnO and ZnO:Al nanopowders have been synthesized by low cost hydrothermal method. Zinc nitrate, hexamethylenetetramine (HMT) and aluminium nitrate are used as precursors for ZnO and AZO with different molar ratios. The structural and optical characterization of doped and un-doped ZnO powders have been investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDAX), photoluminescence (PL) and ultra violet visible (UV-Vis) absorption studies. The SEM results show that the hydrothermal synthesis can be used to obtain nanoparticles with different morphology. It is observed that the grain size of the AZO nanoparticles increased with increasing of Al concentration. The PL measurement of AZO shows that broad range of green emission around 550nm with high intensity. The green emission resulted mainly because of intrinsic defects.

  10. Summary Slides of ALS Industry Highlights

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Print No. Slide Beamline Full Web Highlight ALSNews Volume 17 Takeda Advances Diabetes Research at ALS 5.0.2, 5.0.3 06.02.2015 Vol. 364 16 Metrology for Next-Generation...

  11. Microsoft Word - Maeder et al.doc

    Office of Scientific and Technical Information (OSTI)

    ... molecular nitrogen (Bomar and Knoll 1985; Lobo and Zinder 1988). 73 They also adapt to ... Syst. Appl. Microbiol. 7: 293-299. 494 Lobo, A.L. and S.H. Zinder. 1988. Diazotrophy and ...

  12. Summary Slides of ALS Science Highlights

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary Slides of ALS Science Highlights Print No. Slide ... Vol. 356 294 Graphene's 3D Counterpart 10.0.1 ... 06.27.2007 Vol. 277 142 Laser-Seeded CSR 1.4.3 04.25.2007 ...

  13. ALS History: The First 20 Years

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    History: The First 20 Years Print Below is an interactive timeline covering highlights of the first 20 years of ALS history. By no means exhaustive, it is meant to provide a broad ...

  14. Al Husseini Amelio JV | Open Energy Information

    Open Energy Info (EERE)

    Solar Product: JV company to develop a 1GW solar plant in Jordan and an integrated 200MW thin-film module factory. References: Al-Husseini & Amelio JV1 This article is a stub....

  15. Western Baldwin County, AL Grid Interconnection Project

    SciTech Connect (OSTI)

    Thomas DeBell

    2011-09-30

    The Objective of this Project was to provide an additional supply of electricity to the affected portions of Baldwin County, AL through the purchase, installation, and operation of certain substation equipment.

  16. Footprinting Technique Gives ALS Users New Insights

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    formation. The ALS XFP experts at Beamline 5.3.1. From left: Research Scientist Sayan Gupta, Beamline 5.3.1 Scientist Rich Celestre, and BCSB Head Corie Ralston. XFP, a powerful...

  17. Microsoft Word - AL2005-11.doc

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    appropriate reviews; and (5) ensure they pay only for what they negotiated. AL 2005-11 (071505) - 2 - Background DEAR 970.3102-3-70 DOE Policy is based on the assumption...

  18. 17th Annual ALS Users' Association Meeting

    SciTech Connect (OSTI)

    Robinson, Art; Tamura, Lori

    2004-11-29

    It's not exactly Russian roulette, but scheduling October events outdoors is not risk-free, even in usually sunny California. An overflow crowd of more than 400 registered users, ALS staff, and vendors enjoyed a full indoor program featuring science highlights and workshops spread over two and a half days from October 18 to October 20. However, a major storm, heralding the onset of the San Francisco Bay Area rainy season, posed a few weather challenges for the events on the ALS patio.

  19. Metastability in the MgAl2O4-Al2O3 System

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wilkerson, Dr. Kelley R.; Smith, Jeffrey D; Hemrick, James Gordon

    2014-01-01

    Aluminum oxide must take a spinel form ( -Al2O3) at elevated temperatures in order for extensive solid solution to form between MgAl2O4 and -Al2O3. The solvus line between MgAl2O4 and Al2O3 has been dened at 79.6 wt% Al2O3 at 1500C, 83.0 wt% Al2O3 at 1600C, and 86.5 wt% Al2O3 at 1700C. A metastable region has been dened at temperatures up to 1700C which could have signicant implications for material processing and properties. Additionally, initial processing could have major implications on nal chemistry. The spinel solid solution region has been extended to form an innite solid solution with Al2O3 at elevatedmore » temperatures. A minimum in melting at 1975C and a chemistry of 96 wt% Al2O3 rather than a eutectic is present, resulting in no eutectic crystal formation during solidication.« less

  20. Microsoft Word - AL2000-05.doc | Department of Energy

    Energy Savers [EERE]

    .doc Microsoft Word - AL2000-05.doc PDF icon Microsoft Word - AL2000-05.doc More Documents & Publications al99-06.doc&0; Microsoft Word - AL2000-05Attachment.doc AL2004-01r2.pdf...

  1. AL2000-10Attach.pdf | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AL2000-10Attach.pdf AL2000-10Attach.pdf PDF icon AL2000-10Attach.pdf More Documents & Publications AL2000-10R.pdf AL2004-01r2.pdf Consent Order, Fluor Federal Services - EA-2000-10...

  2. The thermodynamic properties of hydrated -Al2O3 nanoparticles

    SciTech Connect (OSTI)

    Spencer, Elinor; Huang, Baiyu; Parker, Stewart F.; Kolesnikov, Alexander I; Ross, Dr. Nancy; Woodfield, Brian

    2013-01-01

    In this paper we report a combined calorimetric and inelastic neutron scattering (INS) study of hydrated -Al2O3 ( -alumina) nanoparticles. These complementary techniques have enabled a comprehensive evaluation of the thermodynamic properties of this technological and industrially important metal oxide to be achieved. The isobaric heat capacity (Cp) data presented herein provide further critical insights into the much-debated chemical composition of -alumina nanoparticles. Furthermore, the isochoric heat capacity (Cv) of the surface water, which is so essential to the stability of all metal-oxides at the nanoscale, has been extracted from the high-resolution INS data and differs significantly from that of ice Ih due to the dominating influence of strong surface-water interactions. This study also encompassed the analysis of four -alumina samples with differing pore diameters [4.5 (1), 13.8 (2), 17.9 (3), and 27.2 nm (4)], and the results obtained allow us to unambiguously conclude that the water content and pore size have no influence on the thermodynamic behaviour of hydrated -alumina nanoparticles.

  3. Stress-induced piezoelectric field in GaN-based 450-nm light-emitting diodes

    SciTech Connect (OSTI)

    Tawfik, Wael Z.; Hyeon, Gil Yong; Lee, June Key

    2014-10-28

    We investigated the influence of the built-in piezoelectric field induced by compressive stress on the characteristics of GaN-based 450-nm light-emitting diodes (LEDs) prepared on sapphire substrates of different thicknesses. As the sapphire substrate thickness was reduced, the compressive stress in the GaN layer was released, resulting in wafer bowing. The wafer bowing-induced mechanical stress altered the piezoelectric field, which in turn reduced the quantum confined Stark effect in the InGaN/GaN active region of the LED. The flat-band voltage was estimated by measuring the applied bias voltage that induced a 180° phase shift in the electro-reflectance (ER) spectrum. The piezoelectric field estimated by the ER spectra changed by ∼110 kV/cm. The electroluminescence spectral peak wavelength was blue-shifted, and the internal quantum efficiency was improved by about 22% at a high injection current of 100 mA. The LED on the 60-μm-thick sapphire substrate exhibited the highest light output power of ∼59 mW at an injection current of 100 mA, with the operating voltage unchanged.

  4. Multiplexed Oversampling Digitizer in 65 nm CMOS for Column-Parallel CCD Readout

    SciTech Connect (OSTI)

    Grace, Carl; Walder, Jean-Pierre; von der Lippe, Henrik

    2012-04-10

    A digitizer designed to read out column-parallel charge-coupled devices (CCDs) used for high-speed X-ray imaging is presented. The digitizer is included as part of the High-Speed Image Preprocessor with Oversampling (HIPPO) integrated circuit. The digitizer module comprises a multiplexed, oversampling, 12-bit, 80 MS/s pipelined Analog-to-Digital Converter (ADC) and a bank of four fast-settling sample-and-hold amplifiers to instrument four analog channels. The ADC multiplexes and oversamples to reduce its area to allow integration that is pitch-matched to the columns of the CCD. Novel design techniques are used to enable oversampling and multiplexing with a reduced power penalty. The ADC exhibits 188 ?V-rms noise which is less than 1 LSB at a 12-bit level. The prototype is implemented in a commercially available 65 nm CMOS process. The digitizer will lead to a proof-of-principle 2D 10 Gigapixel/s X-ray detector.

  5. Nonlinear optical properties of bulk cuprous oxide using single beam Z-scan at 790?nm

    SciTech Connect (OSTI)

    Serna, J.; Rueda, E.; Garca, H.

    2014-11-10

    The two-photon absorption (TPA) coefficient ? and the nonlinear index of refraction n{sub 2} for bulk cuprous oxide (Cu{sub 2}O) direct gap semiconductor single crystal have been measured by using a balance-detection Z-scan single beam technique, with an excellent signal to noise ratio. Both coefficients were measured at 790?nm using a 65 fs laser pulse at a repetition rate of 90.9?MHz, generated by a Ti:Sapphire laser oscillator. The experimental values for ? were explained by using a model that includes allowed-allowed, forbidden-allowed, and forbidden-forbidden transitions. It was found that the forbidden-forbidden transition is the dominant mechanism, which is consistent with the band structure of Cu{sub 2}O. The low value for ? found in bulk, as compared with respect to thin film, is explained in terms of the structural change in thin films that result in opposite parities of the conduction and valence band. The n{sub 2} is also theoretically calculated by using the TPA dispersion curve and the Kramers-Kronig relations for nonlinear optics.

  6. Detonation wave profiles measured in plastic bonded explosives using 1550 nm photon doppler velocimetry (PDV)

    SciTech Connect (OSTI)

    Gustavsen, Richard L; Bartram, Brian D; Sanchez, Nathaniel J

    2009-01-01

    We present detonation wave profiles measured in two TATB based explosives and two HMX based explosives. Profiles were measured at the interface of the explosive and a Lithium-Fluoride (LiF) window using 1550 nm Photon Doppler Velocimetry (PDV). Planar detonations were produced by impacting the explosive with a projectile launched in a gas-gun. The impact state was varied to produce varied distance to detonation, and therefore varied support of the Taylor wave following the Chapman-Jouget (CJ) or sonic state. Profiles from experiments with different support should be the same between the Von-Neumann (VN) spike and CJ state and different thereafter. Comparison of profiles with differing support, therefore, allows us to estimate reaction zone lengths. For the TATB based explosive, a reaction zone length of {approx} 3.9 mm, 500 ns was measured in EDC-35, and a reaction zone length of {approx} 6.3 mm, 800 ns was measured in PBX 9502 pre-cooled to -55 C. The respective VN spike state was 2.25 {+-} 0.05 km/s in EDC-35 and 2.4 {+-} 0.1 km/s in the cooled PBX 9502. We do not believe we have resolved either the VN spike state (> 2.6 km/s) nor the reaction zone length (<< 50 ns) in the HMX based explosives.

  7. Spectral irradiance model for tungsten halogen lamps in 340-850 nm wavelength range

    SciTech Connect (OSTI)

    Ojanen, Maija; Kaerhae, Petri; Ikonen, Erkki

    2010-02-10

    We have developed a physical model for the spectral irradiance of 1 kW tungsten halogen incandescent lamps for the wavelength range 340-850 nm. The model consists of the Planck's radiation law, published values for the emissivity of tungsten, and a residual spectral correction function taking into account unknown factors of the lamp. The correction function was determined by measuring the spectra of a 1000 W, quartz-halogen, tungsten coiled filament (FEL) lamp at different temperatures. The new model was tested with lamps of types FEL and 1000 W, 120 V quartz halogen (DXW). Comparisons with measurements of two national standards laboratories indicate that the model can account for the spectral irradiance values of lamps with an agreement better than 1% throughout the spectral region studied. We further demonstrate that the spectral irradiance of a lamp can be predicted with an expanded uncertainty of 2.6% if the color temperature and illuminance values for the lamp are known with expanded uncertainties of 20 K and 2%, respectively. In addition, it is suggested that the spectral irradiance may be derived from resistance measurements of the filament with lamp on and off.

  8. New localized/delocalized emitting state of Eu2+ in orange-emitting hexagonal EuAl2O4

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Feng; Meltzer, Richard S.; Li, Xufan; Budai, John D.; Chen, Yu -Sheng; Pan, Zhengwei

    2014-11-18

    Eu2+-activated phosphors are being widely used in illuminations and displays. Some of these phosphors feature an extremely broad and red-shifted Eu2+ emission band; however, convincing explanation of this phenomenon is lacking. Here we report a new localized/delocalized emitting state of Eu2+ ions in a new hexagonal EuAl2O4 phosphor whose Eu2+ luminescence exhibits a very large bandwidth and an extremely large Stokes shift. At 77 K, two luminescent sites responsible for 550 nm and 645 nm broadband emissions are recognized, while at room temperature only the 645 nm emission band emits. The 645 nm emission exhibits a typical radiative lifetime ofmore » 1.27 μs and an unusually large Stokes shift of 0.92 eV. We identify the 645 nm emission as originating from a new type of emitting state whose composition is predominantly that of localized 4f65d character but which also contains a complementary component with delocalized conduction-band-like character. This investigation gives new insights into a unique type of Eu2+ luminescence in solids whose emission exhibits both a very large bandwidth and an extremely large Stokes shift.« less

  9. X-ray diffraction study of short-period AlN/GaN superlattices

    SciTech Connect (OSTI)

    Kyutt, R. N. Shcheglov, M. P.; Ratnikov, V. V.; Yagovkina, M. A.; Davydov, V. Yu.; Smirnov, A. N.; Rozhavskaya, M. M.; Zavarin, E. E.; Lundin, V. V.

    2013-12-15

    The structure of short-period hexagonal GaN/AlN superlattices (SLs) has been investigated by X-ray diffraction. The samples have been grown by metalorganic vapor-phase epitaxy (MOVPE) in a horizontal reactor at a temperature of 1050°C on (0001)Al{sub 2}O{sub 3} substrates using GaN and AlN buffer layers. The SL period changes from 2 to 6 nm, and the thickness of the structure varies in a range from 0.3 to 1 μm. The complex of X-ray diffraction techniques includes a measurement of θ-2θ rocking curves of symmetric Bragg reflection, the construction of intensity maps for asymmetric reflections, a measurement and analysis of peak broadenings in different diffraction geometries, a precise measurement of lattice parameters, and the determination of radii of curvature. The thickness and strain of separate SL layers are determined by measuring the θ-2θ rocking curves subsequent simulation. It is shown that most SL samples are completely relaxed as a whole. At the same time, relaxation is absent between sublayers, which is why strains in the AlN and GaN sublayers (on the order of 1.2 × 10{sup −2}) have different signs. An analysis of diffraction peak half-widths allows us to determine the densities of individual sets of dislocations and observe their change from buffer layers to SLs.

  10. Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

    SciTech Connect (OSTI)

    Al tahtamouni, T. M.; Lin, J. Y.; Jiang, H. X.

    2014-04-15

    Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers. It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the decreased density of surface pits and improved surface morphology and crystalline quality. The performance of the DUV LEDs fabricated using Mg-SL was significantly improved, as manifested by enhanced light intensity and output power, and reduced turn-on voltage. The improved performance is attributed to the enhanced blocking of electron overflow, and enhanced hole injection.

  11. Dispersoid Distribution and Microstructure in Fe-Cr-Al Ferritic Oxide Dispersion-Strengthened Alloy Prepared by Friction Consolidation

    SciTech Connect (OSTI)

    Catalini, David; Kaoumi, Djamel; Reynolds, Anthony; Grant, Glenn J.

    2015-07-09

    INCOLOY® MA956 is a ferritic Oxide Dispersion Strengthened (ODS) alloy. Three different oxides, Y4Al2O9, YAlO3 and Y3Al5O12, have been observed in this alloy. The oxide particle sizes range from just a few up to hundreds of nm and these particles are responsible of the high temperature mechanical strength of this alloy. Mechanically alloyed MA956 powder was consolidated via Friction Consolidation using three different processing conditions. As a result, three small compacts of low porosity were produced. The compacts exhibited a refined equiaxed grain structure with grain sizes smaller than 10 µm and the desired oxide dispersion.YAlO3 and Y3Al5O12 were identified in the compacts by Scanning Electron Microscopy (SEM), Electron Dispersive Spectroscopy (EDS) and X-ray diffraction (XRD). The size distribution of precipitates above 50 nm showed a direct proportionality between average precipitate size and grain size. The total energy input during processing was correlated with the relative amount of each of the oxides in the disks: the higher the total processing energy input, the higher the relative amount of Y3Al5O12 precipitates. The elemental composition of the oxide precipitates was also probed individually by EDS showing an aluminum enrichment trend as precipitates grow in size.

  12. Thickness-dependent blue shift in the excitonic peak of conformally grown ZnO:Al on ion-beam fabricated self-organized Si ripples

    SciTech Connect (OSTI)

    Basu, T.; Kumar, M.; Som, T.; Nandy, S.; Satpati, B.; Saini, C. P.; Kanjilal, A.

    2015-09-14

    Al-doped ZnO (AZO) thin films of thicknesses 5,10, 15, 20, and 30 nm were deposited on 500 eV argon ion-beam fabricated nanoscale self-organized rippled-Si substrates at room temperature and are compared with similar films deposited on pristine-Si substrates (without ripples). It is observed that morphology of self-organized AZO films is driven by the underlying substrate morphology. For instance, for pristine-Si substrates, a granular morphology evolves for all AZO films. On the other hand, for rippled-Si substrates, morphologies having chain-like arrangement (anisotropic in nature) are observed up to a thickness of 20 nm, while a granular morphology evolves (isotropic in nature) for 30 nm-thick film. Photoluminescence studies reveal that excitonic peaks corresponding to 5–15 nm-thick AZO films, grown on rippled-Si templates, show a blue shift of 8 nm and 3 nm, respectively, whereas the peak shift is negligible for 20-nm thick film (with respect to their pristine counter parts). The observed blue shifts are substantiated by diffuse reflectance study and attributed to quantum confinement effect, associated with the size of the AZO grains and their spatial arrangements driven by the anisotropic morphology of underlying rippled-Si templates. The present findings will be useful for making tunable AZO-based light-emitting devices.

  13. AL 2014-06 ACQUISITION LETTERS REMAINING IN EFFECT | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AL 2014-06 ACQUISITION LETTERS REMAINING IN EFFECT AL 2014-06 ACQUISITION LETTERS REMAINING IN EFFECT Acquisition Letters (AL) that remain in effect are identified below. All other...

  14. Microsoft Word - AL2005-16.doc | Department of Energy

    Office of Environmental Management (EM)

    6.doc Microsoft Word - AL2005-16.doc PDF icon Microsoft Word - AL2005-16.doc More Documents & Publications Microsoft Word - AL2005-10.doc Audit Report: IG-0860 Microsoft Word -...

  15. Microsoft Word - AL2000-01.doc | Department of Energy

    Office of Environmental Management (EM)

    AL2000-01.doc Microsoft Word - AL2000-01.doc PDF icon Microsoft Word - AL2000-01.doc More Documents & Publications ALFAL 99-01 Department of Energy No Microsoft Word -...

  16. Microsoft Word - AL2005-02.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    5-02.doc Microsoft Word - AL2005-02.doc PDF icon Microsoft Word - AL2005-02.doc More Documents & Publications Microsoft Word - AL-Omnibus FY 2009 Apr 22 2009 all sections.doc...

  17. Microsoft Word - AL2002-03.doc | Department of Energy

    Office of Environmental Management (EM)

    2-03.doc Microsoft Word - AL2002-03.doc PDF icon Microsoft Word - AL2002-03.doc More Documents & Publications Microsoft Word - AL2005-01.doc Microsoft Word - FAL2004-01.doc...

  18. Microsoft Word - AL2008-06.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AL2008-06.doc Microsoft Word - AL2008-06.doc PDF icon Microsoft Word - AL2008-06.doc More Documents & Publications Chapter 9 - Contracting Qualifications Microsoft Word - PART...

  19. Microsoft Word - AL2005-11.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1.doc Microsoft Word - AL2005-11.doc PDF icon Microsoft Word - AL2005-11.doc More Documents & Publications Audit Report: OAS-L-13-08 Microsoft Word - AL2005-12.doc CHAPTER 7...

  20. Microsoft Word - AL2006-02.doc | Department of Energy

    Energy Savers [EERE]

    2.doc Microsoft Word - AL2006-02.doc PDF icon Microsoft Word - AL2006-02.doc More Documents & Publications Microsoft Word - AL2006-03.doc Archived Financial Assistance Letters...

  1. Microsoft Word - AL2006-03.doc | Department of Energy

    Energy Savers [EERE]

    3.doc Microsoft Word - AL2006-03.doc PDF icon Microsoft Word - AL2006-03.doc More Documents & Publications Microsoft Word - AL2006-02.doc Archived Financial Assistance Letters...

  2. Microsoft Word - AL-ARRASafetyALREDO3 | Department of Energy

    Energy Savers [EERE]

    ARRASafetyALREDO3 Microsoft Word - AL-ARRASafetyALREDO3 PDF icon Microsoft Word - AL-ARRASafetyALREDO3 More Documents & Publications Microsoft Word - AL-ARRASafetyALREDO3.doc...

  3. Microsoft Word - AL2005-14.doc | Department of Energy

    Office of Environmental Management (EM)

    4.doc Microsoft Word - AL2005-14.doc PDF icon Microsoft Word - AL2005-14.doc More Documents & Publications Microsoft Word - AL-Omnibus FY 2009 Apr 22 2009 all sections.doc...

  4. Microsoft Word - AL2005-07.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    7.doc Microsoft Word - AL2005-07.doc PDF icon Microsoft Word - AL2005-07.doc More Documents & Publications Microsoft Word - AL2006-07.doc OPAM Policy Acquisition Guides Initial ...

  5. Microsoft Word - al95-14.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    al95-14.doc Microsoft Word - al95-14.doc PDF icon Microsoft Word - al95-14.doc More Documents & Publications Cooperation with the New Independent States of the Former Soviet Union ...

  6. Microsoft Word - AL2005-01.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1.doc Microsoft Word - AL2005-01.doc PDF icon Microsoft Word - AL2005-01.doc More Documents & Publications Microsoft Word - AL2006-08.doc Acquisition Letter Archive listing ...

  7. Microsoft Word - AL2006-01.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1.doc Microsoft Word - AL2006-01.doc PDF icon Microsoft Word - AL2006-01.doc More Documents & Publications Microsoft Word - al2005-06.doc Chapter 19 - Small Business Programs OPAM...

  8. al99-06attachment.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    attachment.doc&0; al99-06attachment.doc&0; PDF icon al99-06attachment.doc&0; More Documents & Publications Microsoft Word - AL2000-05Attachment.doc Microsoft Word - NSRC...

  9. Microsoft Word - AL2008-05.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AL2008-05.doc Microsoft Word - AL2008-05.doc PDF icon Microsoft Word - AL2008-05.doc More Documents & Publications Acquisition Letters Remaining In Effect Acquisition Letters ...

  10. AL2001-04.pdf | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1-04.pdf AL2001-04.pdf PDF icon AL2001-04.pdf More Documents & Publications FAL2001-04.pdf FAL2001-03.pdf AL2001-01...

  11. AL2001-01.pdf | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1-01.pdf AL2001-01.pdf PDF icon AL2001-01.pdf More Documents & Publications FAL2001-03.pdf FAL2001-02.pdf AL2001-04...

  12. AL2006-05.pdf | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    5.pdf AL2006-05.pdf PDF icon AL2006-05.pdf More Documents & Publications 2006 EMAB Recommendation Summary Microsoft Word - AL2006-08.doc DOEECRReport2006(2).pdf...

  13. G I E Al Wahdoui | Open Energy Information

    Open Energy Info (EERE)

    I E Al Wahdoui Jump to: navigation, search Name: G.I.E. Al Wahdoui Place: Morocco Zip: BP 131 Sector: Solar Product: GIE Al Wahdoui is developing a solar project in Plage, Morocco....

  14. Microsoft Word - AL2006-11.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AL2006-11.doc Microsoft Word - AL2006-11.doc PDF icon Microsoft Word - AL2006-11.doc More Documents & Publications Subject: Cost and Price Analysis Subject: Cost and Price Analysis...

  15. The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

    SciTech Connect (OSTI)

    Gaddy, BE; Bryan, Z; Bryan, I; Xie, JQ; Dalmau, R; Moody, B; Kumagai, Y; Nagashima, T; Kubota, Y; Kinoshita, T; Koukitu, A; Kirste, R; Sitar, Z; Collazo, R; Irving, DL

    2014-05-19

    Co-doping AlN crystals with Si is found to suppress the unwanted 4.7 eV (265 nm) deep ultraviolet absorption associated with isolated carbon acceptors common in materials grown by physical vapor transport. Density functional theory calculations with hybrid functionals demonstrate that silicon forms a stable nearest-neighbor defect complex with carbon. This complex is predicted to absorb at 5.5 eV and emit at or above 4.3 eV. Absorption and photoluminescence measurements of co-doped samples confirm the presence of the predicted C-N-Si-Al complex absorption and emission peaks and significant reduction of the 4.7 eV absorption. Other sources of deep ultraviolet absorption in AlN are also discussed. (C) 2014 AIP Publishing LLC.

  16. Demonstration of solar-blind Al{sub x}Ga{sub 1−x}N-based heterojunction phototransistors

    SciTech Connect (OSTI)

    Zhang, Lingxia; Tang, Shaoji; Liu, Changshan; Li, Bin; Wu, Hualong; Wang, Hailong; Wu, Zhisheng; Jiang, Hao

    2015-12-07

    Al{sub 0.4}Ga{sub 0.6}N/Al{sub 0.65}Ga{sub 0.35}N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 10{sup 3} was obtained at 6 V bias.

  17. NM WAIDS: A PRODUCED WATER QUALITY AND INFRASTRUCTURE GIS DATABASE FOR NEW MEXICO OIL PRODUCERS

    SciTech Connect (OSTI)

    Martha Cather; Robert Lee; Ibrahim Gundiler; Andrew Sung; Naomi Davidson; Ajeet Kumar Reddy; Mingzhen Wei

    2003-04-01

    The New Mexico Water and Infrastructure Data System (NM WAIDS) seeks to alleviate a number of produced water-related issues in southeast New Mexico. The project calls for the design and implementation of a Geographical Information System (GIS) and integral tools that will provide operators and regulators with necessary data and useful information to help them make management and regulatory decisions. The major components of this system are: (1) databases on produced water quality, cultural and groundwater data, oil pipeline and infrastructure data, and corrosion information, (2) a web site capable of displaying produced water and infrastructure data in a GIS or accessing some of the data by text-based queries, (3) a fuzzy logic-based, site risk assessment tool that can be used to assess the seriousness of a spill of produced water, and (4) a corrosion management toolkit that will provide operators with data and information on produced waters that will aid them in deciding how to address corrosion issues. The various parts of NM WAIDS will be integrated into a website with a user-friendly interface that will provide access to previously difficult-to-obtain data and information. Primary attention during the first six months of this project has been focused on creating the water quality databases for produced water and surface water, along with collection of corrosion information and building parts of the corrosion toolkit. Work on the project to date includes: (1) Creation of a water quality database for produced water analyses. The database was compiled from a variety of sources and currently has over 4000 entries for southeast New Mexico. (2) Creation of a web-based data entry system for the water quality database. This system allows a user to view, enter, or edit data from a web page rather than having to directly access the database. (3) Creation of a semi-automated data capturing system for use with standard water quality analysis forms. This system improves the

  18. NM WAIDS: A PRODUCED WATER QUALITY AND INFRASTRUCTURE GIS DATABASE FOR NEW MEXICO OIL PRODUCERS

    SciTech Connect (OSTI)

    Martha Cather; Robert Lee; Ibrahim Gundiler; Andrew Sung

    2003-09-24

    The New Mexico Water and Infrastructure Data System (NM WAIDS) seeks to alleviate a number of produced water-related issues in southeast New Mexico. The project calls for the design and implementation of a Geographical Information System (GIS) and integral tools that will provide operators and regulators with necessary data and useful information to help them make management and regulatory decisions. The major components of this system are: (1) Databases on produced water quality, cultural and groundwater data, oil pipeline and infrastructure data, and corrosion information. (2) A web site capable of displaying produced water and infrastructure data in a GIS or accessing some of the data by text-based queries. (3) A fuzzy logic-based, site risk assessment tool that can be used to assess the seriousness of a spill of produced water. (4) A corrosion management toolkit that will provide operators with data and information on produced waters that will aid them in deciding how to address corrosion issues. The various parts of NM WAIDS will be integrated into a website with a user-friendly interface that will provide access to previously difficult-to-obtain data and information. Primary attention during the first six months of this project was focused on creating the water quality databases for produced water and surface water, along with collecting of corrosion information and building parts of the corrosion toolkit. Work on the project to date includes: (1) Creation of a water quality database for produced water analyses. The database was compiled from a variety of sources and currently has over 7000 entries for New Mexico. (2) Creation of a web-based data entry system for the water quality database. This system allows a user to view, enter, or edit data from a web page rather than having to directly access the database. (3) Creation of a semi-automated data capturing system for use with standard water quality analysis forms. This system improves the accuracy and speed

  19. Development of process parameters for 22 nm PMOS using 2-D analytical modeling

    SciTech Connect (OSTI)

    Maheran, A. H. Afifah; Menon, P. S.; Shaari, S.; Ahmad, I.; Faizah, Z. A. Noor

    2015-04-24

    The complementary metal-oxide-semiconductor field effect transistor (CMOSFET) has become major challenge to scaling and integration. Innovation in transistor structures and integration of novel materials are necessary to sustain this performance trend. CMOS variability in the scaling technology becoming very important concern due to limitation of process control; over statistically variability related to the fundamental discreteness and materials. Minimizing the transistor variation through technology optimization and ensuring robust product functionality and performance is the major issue.In this article, the continuation study on process parameters variations is extended and delivered thoroughly in order to achieve a minimum leakage current (I{sub LEAK}) on PMOS planar transistor at 22?nm gate length. Several device parameters are varies significantly using Taguchi method to predict the optimum combination of process parameters fabrication. A combination of high permittivity material (high-k) and metal gate are utilized accordingly as gate structure where the materials include titanium dioxide (TiO{sub 2}) and tungsten silicide (WSi{sub x}). Then the L9 of the Taguchi Orthogonal array is used to analyze the device simulation where the results of signal-to-noise ratio (SNR) of Smaller-the-Better (STB) scheme are studied through the percentage influences of the process parameters. This is to achieve a minimum I{sub LEAK} where the maximum predicted I{sub LEAK} value by International Technology Roadmap for Semiconductors (ITRS) 2011 is said to should not above 100 nA/m. Final results shows that the compensation implantation dose acts as the dominant factor with 68.49% contribution in lowering the devices leakage current. The absolute process parameters combination results in I{sub LEAK} mean value of 3.96821 nA/m where is far lower than the predicted value.

  20. Use of a dynamic simulation model to understand nitrogen cycling in the middle Rio Grande, NM.

    SciTech Connect (OSTI)

    Meixner, Tom; Tidwell, Vincent Carroll; Oelsner, Gretchen; Brooks, Paul; Roach, Jesse D.

    2008-08-01

    Water quality often limits the potential uses of scarce water resources in semiarid and arid regions. To best manage water quality one must understand the sources and sinks of both solutes and water to the river system. Nutrient concentration patterns can identify source and sink locations, but cannot always determine biotic processes that affect nutrient concentrations. Modeling tools can provide insight into these large-scale processes. To address questions about large-scale nitrogen removal in the Middle Rio Grande, NM, we created a system dynamics nitrate model using an existing integrated surface water--groundwater model of the region to evaluate our conceptual models of uptake and denitrification as potential nitrate removal mechanisms. We modeled denitrification in groundwater as a first-order process dependent only on concentration and used a 5% denitrification rate. Uptake was assumed to be proportional to transpiration and was modeled as a percentage of the evapotranspiration calculated within the model multiplied by the nitrate concentration in the water being transpired. We modeled riparian uptake as 90% and agricultural uptake as 50% of the respective evapotranspiration rates. Using these removal rates, our model results suggest that riparian uptake, agricultural uptake and denitrification in groundwater are all needed to produce the observed nitrate concentrations in the groundwater, conveyance channels, and river as well as the seasonal concentration patterns. The model results indicate that a total of 497 metric tons of nitrate-N are removed from the Middle Rio Grande annually. Where river nitrate concentrations are low and there are no large nitrate sources, nitrate behaves nearly conservatively and riparian and agricultural uptake are the most important removal mechanisms. Downstream of a large wastewater nitrate source, denitrification and agricultural uptake were responsible for approximately 90% of the nitrogen removal.

  1. Understanding the anomalous dispersion of doubly-ionized carbon plasmas near 47 nm

    SciTech Connect (OSTI)

    Nilsen, J; Castor, J I; Iglesias, C A; Cheng, K T; Dunn, J; Johnson, W R; Filevich, J; Purvis, M A; Grava, J; Rocca, J J

    2008-04-15

    Over the last several years we have predicted and observed plasmas with an index of refraction greater than one in the soft X-ray regime. These plasmas are usually a few times ionized and have ranged from low-Z carbon plasmas to mid-Z tin plasmas. Our main calculational tool has been the average atom code. We have recently observed C{sup 2+} plasmas with an index of refraction greater than one at a wavelength of 46.9 nm (26.44 eV). In this paper we compare the average atom method, AVATOMKG, against two more detailed methods, OPAL and CAK, for calculating the index of refraction for the carbon plasmas and discuss the different approximations used. We present experimental measurements of carbon plasmas that display this anomalous dispersion phenomenon. It is shown that the average atom calculation is a good approximation when the strongest lines dominate the dispersion. However, when weaker lines make a significant contribution, the more detailed calculations such as OPAL and CAK are essential. During the next decade X-ray free electron lasers and other X-ray sources will be available to probe a wider variety of plasmas at higher densities and shorter wavelengths so understanding the index of refraction in plasmas will be even more essential. With the advent of tunable X-ray lasers the frequency dependent interferometer measurements of the index of refraction may enable us to determine the absorption coefficients and line-shapes and make detailed comparisons against our atomic physics codes.

  2. Direct Probes of 4 nm Diameter Gold Nanoparticles Interacting with Supported Lipid Bylayers

    SciTech Connect (OSTI)

    Troiano, Julianne; Olenick, Laura L.; Kuech, Thomas R.; Melby, Eric S.; Hu, Dehong; Lohse, Samuel E.; Mensch, Arielle C.; Dogangun, Merve; Vartanian, Arlane M.; Torelli, Marco; Ehimiaghe, Eseohi; Walter, Stephanie R.; Fu, Li; Anderton, Christopher R.; Zhu, Zihua; Wang, Hongfei; Orr, Galya; Murphy, Catherine; Hamers, Robert J.; Pedersen, Joel A.; Geiger, Franz M.

    2015-01-08

    Interfacial charge densities and potentials are determined for silica-supported phospholipid bilayers formed from lipids having zwitterionic, negatively charged, and positively charged headgroups. Quartz crystal microbalance with dissipation (QCM-D), fluorescence recovery after photobleaching (FRAP), and atomic force microscopy demonstrate the presence of well-formed supported lipid bilayers, which, as probed by vibrational sum frequency generation (SFG), undergo negligible structural changes along their alkyl chains when NaCl concentration is raised from 0.001 to 0.1 M. From second harmonic generation (SHG) measurements we estimate that each zwitterionic headgroup of the bilayer formed from pure DOPC is associated with an apparent charge of -0.028(+0.008/-0.007)×10-¹⁹C, corresponding to 1.8 ± 0.5 % of an elementary negative charge. Moreover, we show that a supported lipid bilayer carrying an apparent negative interfacial potential may interact with not just positively charged 4-nm diameter gold nanoparticles but also negatively charged gold nanoparticles. In this latter case, charge-charge repulsion does not appear to inhibit particle-bilayer interactions and is likely overcome by multivalent interactions that are estimated to involve 3-5 hydrogen-bond equivalents. FRAP, QCM-D, and SFG measurements indicate that the bilayers remain intact under the conditions of the experiments. SHG charge screening experiments are consistent with an apparent zero net charge density associated with the positively charged gold nanoparticles when they are attached to a supported lipid bilayer carrying an apparent negative potential. The results presented here serve to benchmark experimental and computational studies of the nano-bio interface.

  3. Remediation of a Classified Waste Landfill at Sandia National Laboratories, NM

    SciTech Connect (OSTI)

    Ward, D.C.

    1998-10-20

    The Sandia National Laboratory es/New Mexico (SNLiNM) Environmental Restoration Project is currently excavating the Classified Waste Landfill in Technical Area II (TA-H), which consists of disposal pits and trenches with discrete disposal cells. TA-11 is a secure, controlled assess, research facility managed by SNIJNM for the US Department of Energy (DOE). The 45-acre facility was established in 1948 for the assembly and maintenance of nuclear weapons. The assembly of weapons was discontinued in 1954. Since that time, TA-11 has been used primarily for explosive research and testing. Beginning is 1984, the DOE Er,vironmental Restoration Program conducted several environmental investigations across TA-11 and SNMNM. These investigations identified sites requiring firther study and possible corrective action. The majority of these sites were grouped into operable units (OUS). The TA-11 OU included 13 sites, one of which is identified as the Classified Waste Landfill (CWLF). The CWLF covers about 2.5 acres and was operated from approximately 1947 through 1987. It was the site for disposal of classified weapon components, s ome of which are potentially explosive, hazardous, ardor radioactively contarninatod. Until about 1958, no records were maintained for material disposed of in the CWLF. Information on the CWLF has been assembled horn interview notes, delivery to reckmation records and other sources. Items disposed of included security containers, hoppers, skids, missiles, wooden boxes, deactivated heat sources, tntium boosters, scintillation cocktails, weapons cases, shells, lasers, radar equipment and accountable mata-ials. Potential contaminants include tritium, thorium, cesium-137, strontium-90, uraniun, plutonium, beryllium, cadmium, lithium, chloroform, toluene, benzene ad other solvents.

  4. Charge transfer fluorescence and 34 nm exciton diffusion length in polymers with electron acceptor end traps

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zaikowski, Lori; Mauro, Gina; Bird, Matthew; Karten, Brianne; Asaoka, Sadayuki; Wu, Qin; Cook, Andrew R.; Miller, John R.

    2014-12-22

    Photoexcitation of conjugated poly-2,7-(9,9-dihexylfluorene) polyfluorenes with naphthylimide (NI) and anthraquinone (AQ) electron-acceptor end traps produces excitons that form charge transfer states at the end traps. Intramolecular singlet exciton transport to end traps was examined by steady state fluorescence for polyfluorenes of 17 to 127 repeat units in chloroform, dimethylformamide (DMF), tetrahydrofuran (THF), and p-xylene. End traps capture excitons and form charge transfer (CT) states at all polymer lengths and in all solvents. The CT nature of the end-trapped states is confirmed by their fluorescence spectra, solvent and trap group dependence and DFT descriptions. Quantum yields of CT fluorescence are asmore » large as 46%. This strong CT emission is understood in terms of intensity borrowing. Energies of the CT states from onsets of the fluorescence spectra give the depths of the traps which vary with solvent polarity. For NI end traps the trap depths are 0.06 (p-xylene), 0.13 (THF) and 0.19 eV (CHCl3). For AQ, CT fluorescence could be observed only in p-xylene where the trap depth is 0.27 eV. Quantum yields, emission energies, charge transfer energies, solvent reorganization and vibrational energies were calculated. Fluorescence measurements on chains >100 repeat units indicate that end traps capture ~50% of the excitons, and that the exciton diffusion length LD =34 nm, which is much larger than diffusion lengths reported in polymer films or than previously known for diffusion along isolated chains. As a result, the efficiency of exciton capture depends on chain length, but not on trap depth, solvent polarity or which trap group is present.« less

  5. Charge Transfer Fluorescence and 34 nm Exciton Diffusion Length in Polymers with Electron Acceptor End Traps

    SciTech Connect (OSTI)

    Zaikowski, L.; Mauro, G.; Bird, M.; Karten, B.; Asaoka, S.; Wu, Q.; Cook, A. R.; Miller, J.

    2014-12-22

    Photoexcitation of conjugated poly-2,7-(9,9-dihexylfluorene) polyfluorenes with naphthylimide (NI) and anthraquinone (AQ) electron-acceptor end traps produces excitons that form charge transfer states at the end traps. Intramolecular singlet exciton transport to end traps was examined by steady state fluorescence for polyfluorenes of 17 to 127 repeat units in chloroform, dimethylformamide (DMF), tetrahydrofuran (THF), and p-xylene. End traps capture excitons and form charge transfer (CT) states at all polymer lengths and in all solvents. The CT nature of the end-trapped states is confirmed by their fluorescence spectra, solvent and trap group dependence and DFT descriptions. Quantum yields of CT fluorescence are as large as 46%. This strong CT emission is understood in terms of intensity borrowing. Energies of the CT states from onsets of the fluorescence spectra give the depths of the traps which vary with solvent polarity. For NI end traps the trap depths are 0.06 (p-xylene), 0.13 (THF) and 0.19 eV (CHCl3). For AQ, CT fluorescence could be observed only in p-xylene where the trap depth is 0.27 eV. Quantum yields, emission energies, charge transfer energies, solvent reorganization and vibrational energies were calculated. Fluorescence measurements on chains >100 repeat units indicate that end traps capture ~50% of the excitons, and that the exciton diffusion length LD =34 nm, which is much larger than diffusion lengths reported in polymer films or than previously known for diffusion along isolated chains. The efficiency of exciton capture depends on chain length, but not on trap depth, solvent polarity or which trap group is present.

  6. Development of epitaxial AlxSc1-xN for artificially structured metal/semiconductor superlattice metamaterials

    SciTech Connect (OSTI)

    Sands, Timothy D.; Stach, Eric A.; Saha, Bivas; Saber, Sammy; Naik, Gururaj V.; Boltasseva, Alexandra; Kvam, Eric P.

    2015-02-01

    Epitaxial nitride rocksalt metal/semiconductor superlattices are emerging as a novel class of artificially structured materials that have generated significant interest in recent years for their potential application in plasmonic and thermoelectric devices. Though most nitride metals are rocksalt, nitride semiconductors in general have hexagonal crystal structure. We report rocksalt aluminum scandium nitride (Al,Sc)N alloys as the semiconducting component in epitaxial rocksalt metal/semiconductor superlattices. The AlxSc1-xN alloys when deposited directly on MgO substrates are stabilized in a homogeneous rocksalt (single) phase when x < 0.51. Employing 20 nm TiN as a seed layer on MgO substrates, the homogeneity range for stabilizing the rocksalt phase has been extended to x < 0.82 for a 120 nm film. The rocksalt AlxSc1-xN alloys show moderate direct bandgap bowing with a bowing parameter, B = 1.41 0.19 eV. The direct bandgap of metastable rocksalt AlN is extrapolated to be 4.70 0.20 eV. The tunable lattice parameter, bandgap, dielectric permittivity, and electronic properties of rocksalt AlxSc1-xN alloys enable high quality epitaxial rocksalt metal/AlxSc1-xN superlattices with a wide range of accessible metamaterials properties.

  7. Development of epitaxial AlxSc1-xN for artificially structured metal/semiconductor superlattice metamaterials

    SciTech Connect (OSTI)

    Sands, Timothy D.; Stach, Eric A.; Saha, Bivas; Saber, Sammy; Naik, Gururaj V.; Boltasseva, Alexandra; Kvam, Eric P.

    2015-02-01

    Epitaxial nitride rocksalt metal/semiconductor superlattices are emerging as a novel class of artificially structured materials that have generated significant interest in recent years for their potential application in plasmonic and thermoelectric devices. Though most nitride metals are rocksalt, nitride semiconductors in general have hexagonal crystal structure. We report rocksalt aluminum scandium nitride (Al,Sc)N alloys as the semiconducting component in epitaxial rocksalt metal/semiconductor superlattices. The AlxSc1-xN alloys when deposited directly on MgO substrates are stabilized in a homogeneous rocksalt (single) phase when x < 0.51. Employing 20 nm TiN as a seed layer on MgO substrates, the homogeneity range for stabilizing the rocksalt phase has been extended to x < 0.82 for a 120 nm film. The rocksalt AlxSc1-xN alloys show moderate direct bandgap bowing with a bowing parameter, B = 1.41 ± 0.19 eV. The direct bandgap of metastable rocksalt AlN is extrapolated to be 4.70 ± 0.20 eV. The tunable lattice parameter, bandgap, dielectric permittivity, and electronic properties of rocksalt AlxSc1-xN alloys enable high quality epitaxial rocksalt metal/AlxSc1-xN superlattices with a wide range of accessible metamaterials properties.

  8. Photopumped red-emitting InP/In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition

    SciTech Connect (OSTI)

    Ryou, J. H.; Dupuis, R. D.; Walter, G.; Kellogg, D. A.; Holonyak, N.; Mathes, D. T.; Hull, R.; Reddy, C. V.; Narayanamurti, V.

    2001-06-25

    We report the 300 K operation of optically pumped red-emitting lasers fabricated from InP self-assembled quantum dots embedded in In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P layers on GaAs (100) substrates grown by metalorganic chemical vapor deposition. Quantum dots grown at 650{degree}C on In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P layers have a high density on the order of 10{sup 10} cm{sup {minus}2} and the dominant size of individual quantum dots ranges from {similar_to}5 to {similar_to}10 nm for 7.5 monolayer {open_quotes}equivalent growth.{close_quotes} These InP/In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P quantum dot heterostructures are characterized by atomic force microscopy, high-resolution transmission electron microscopy, and photoluminescence. Laser structures are prepared from wafers having two vertically stacked InP quantum dot active layers within a 100-nm-thick In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P waveguide and upper and lower 600 nm InAlP cladding layers. We observe lasing at {lambda}{similar_to}680 nm at room temperature in optically pumped samples. {copyright} 2001 American Institute of Physics.

  9. Acquisitlon Letter No. AL 2008-06 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AL 2008-06 Acquisitlon Letter No. AL 2008-06 Subject: Domestic and Foreign Procurement Preference Requirements References: FAR Part 25 - Foreign Acquisition DEAR Part 925 - Foreign ...

  10. Field Mapping At Chena Geothermal Area (Waring, Et Al., 1917...

    Open Energy Info (EERE)

    Waring, Et Al., 1917) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Field Mapping At Chena Geothermal Area (Waring, Et Al., 1917) Exploration...

  11. Radiometrics At Salt Wells Area (Henkle, Et Al., 2005) | Open...

    Open Energy Info (EERE)

    Henkle, Et Al., 2005) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Radiometrics At Salt Wells Area (Henkle, Et Al., 2005) Exploration Activity...

  12. Observation Wells At Lightning Dock Area (Warpinski, Et Al.,...

    Open Energy Info (EERE)

    Area (Warpinski, Et Al., 2004) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Observation Wells At Lightning Dock Area (Warpinski, Et Al., 2004)...

  13. Moore Foundation Funds ALS Researchers for Promising New Technique...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Moore Foundation Funds ALS Researchers for Promising New Technique for Studying Materials Moore Foundation Funds ALS Researchers for Promising New Technique for Studying Materials...

  14. Fluid Inclusion Analysis At Geysers Area (Moore, Et Al., 2001...

    Open Energy Info (EERE)

    Area (Moore, Et Al., 2001) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Fluid Inclusion Analysis At Geysers Area (Moore, Et Al., 2001)...

  15. Microsoft Word - al2006-12.doc | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Microsoft Word - al2006-12.doc More Documents & Publications Acquisition Letter No. AL 2008-02 Department of Energy Special Report: DOEIG-0934...

  16. Acquisition Letter No. AL 2012-05 | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    and Project Management SUBJECT: Reissuance of Acquisition Letter on Meal Costs in Management and Operation Contracts SUMMARY: This AL is a reissuance (under the new AL...

  17. Microsoft Word - AL2005-12.doc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PDF icon Microsoft Word - AL2005-12.doc More Documents & Publications Microsoft Word - AL2005-11.doc OPAM Policy Acquisition Guides Chapter 31 - Contract Cost Principles...

  18. Field Mapping At Dixie Valley Geothermal Area (Smith, Et Al....

    Open Energy Info (EERE)

    Smith, Et Al., 2001) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Field Mapping At Dixie Valley Geothermal Area (Smith, Et Al., 2001)...

  19. PRELIMINARY SURVEY OF AL-TECH SPECIALTY STEEL CORPORATION WATERVLIET...

    Office of Legacy Management (LM)

    . PRELIMINARY SURVEY OF AL-TECH SPECIALTY STEEL CORPORATION WATERVLIET, NEW YORK Work ... I . . . .*l-..l- . ..-.-- - - - - .-- AL-TECH SPECIALTY STEEL CORPORATION ...

  20. ALS "Workhorse" Endstation Retires after 22 Years of Service

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    "Workhorse" Endstation Retires after 22 Years of Service ALS "Workhorse" Endstation Retires after 22 Years of Service Print Following a career spanning over two decades, ALS ...

  1. The mechanical properties of FeAl

    SciTech Connect (OSTI)

    Baker, I.; George, E.P.

    1996-12-31

    Only in the last few years has progress been made in obtaining reproducible mechanical properties data for FeAl. Two sets of observations are the foundation of this progress. The first is that the large vacancy concentrations that exist in FeAl at high temperature are easily retained at low temperature and that these strongly affect the low-temperature mechanical properties. The second is that RT ductility is adversely affected by water vapor. Purpose of this paper is not to present a comprehensive overview of the mechanical properties of FeAl but rather to highlight our understanding of key phenomena and to show how an understanding of the factors which control the yield strength and fracture behavior has followed the discovery of the above two effects. 87 refs, 9 figs.

  2. High Rate Deposition of High Quality ZnO:Al by Filtered Cathodic Arc

    SciTech Connect (OSTI)

    Mendelsberg, Rueben J.; Lim, S.H.N.; Milliron, D.J.; Anders, Andre

    2010-11-18

    High quality ZnO:Al (AZO) thin films were prepared on glass substrates by direct current filtered cathodic arc deposition. Substrate temperature was varied from room temperature to 425oC, and samples were grown with and without the assistance of low power oxygen plasma (75W). For each growth condition, at least 3 samples were grown to give a statistical look at the effect of the growth environment on the film properties and to explore the reproducibility of the technique. Growth rate was in the 100-400 nm/min range but was apparently random and could not be easily traced to the growth conditions explored. For optimized growth conditions, 300-600 nm AZO films had resistivities of 3-6 x 10-4 ?Omega cm, carrier concentrations in the range of 2-4 x 1020 cm3, Hall mobility as high as 55 cm2/Vs, and optical transmittance greater than 90percent. These films are also highly oriented with the c-axis perpendicular to the substrate and a surface roughness of 2-4 nm.

  3. Effects of solar ultraviolet photons on mammalian cell DNA. [UVA (320-400 nm):a2

    SciTech Connect (OSTI)

    Peak, M.J.; Peak, J.G.

    1991-01-01

    This document presents information on the possible mechanisms of carcinogenesis caused by UVA (ultraviolet radiation in the 320--400 nm region). Most studies showing the carcinogenic effects of ultraviolet light have concentrated on UVB (280--320 nm). UVA had been considered harmless even though it penetrates biological tissues better than UVB. Recently, it has become apparent that UVA is also capable of causing damage to cellular DNA. This was unexpected because the DNA UV absorption spectrum indicates a negligible probability that photons of wavelengths longer than 320 nm will be directly absorbed. The most common defects induced in DNA by UVB are pyrimidine photoproducts, such as thymidine dimers. UVA photons produce defects resembling those caused by ionizing radiations: single- and double-strand breaks, and DNA-protein crosslinks. This paper also discusses the role of DNA repair mechanisms in UVA-induced defects and the molecular mechanisms of UVA damage induction. 38 refs. (MHB)

  4. Electronic circuits having NiAl and Ni.sub.3 Al substrates

    DOE Patents [OSTI]

    Deevi, Seetharama C.; Sikka, Vinod K.

    1999-01-01

    An electronic circuit component having improved mechanical properties and thermal conductivity comprises NiAl and/or Ni.sub.3 Al, upon which an alumina layer is formed prior to applying the conductive elements. Additional layers of copper-aluminum alloy or copper further improve mechanical strength and thermal conductivity.

  5. Promising Magnesium Battery Research at ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Promising Magnesium Battery Research at ALS Promising Magnesium Battery Research at ALS Print Wednesday, 23 January 2013 16:59 toyota battery a) Cross-section of the in situ electrochemical/XAS cell with annotations. b) Drawing and c) photograph of the assembled cell. Alternatives to the current lithium-ion-based car batteries are at the forefront of the automotive industry's research agenda-manufacturers want to build cars with longer battery life, and to do that they're going to have to find

  6. Caribou Biosciences Has Roots at the ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Caribou Biosciences Has Roots at the ALS Caribou Biosciences Has Roots at the ALS Print Monday, 15 September 2014 11:01 When Rachel Haurwitz joined UC Berkeley biology professor Jennifer Doudna's lab in 2007 as a graduate student, little did the two women know that the interesting bacterial immune system they were studying would be the subject of news headlines and the basis for a biotech startup just a few years later. It turned out that the bacterial immune system they were studying, known as

  7. ALS Ceramics Materials Research Advances Engine Performance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Ceramics Materials Research Advances Engine Performance Print ritchie ceramics This 3D image of a ceramic composite specimen imaged under load at 1750C shows the detailed fracture patterns that researchers are able to view using ALS Beamline 8.3.2. The vertical white lines are the individual silicon carbide fibers in this sample about 500 microns in diameter. LBNL senior materials scientist and U.C. Berkeley professor Rob Ritchie has been researching the fracture behavior of a wide array of

  8. ALS History: The First 20 Years

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    History: The First 20 Years Print Below is an interactive timeline covering highlights of the first 20 years of ALS history. By no means exhaustive, it is meant to provide a broad overview of the people and events that have helped shape the ALS as well as a sense of the breadth of the science that has been done here. Click on items to see more detail. Slide the blue rectangle at bottom to move forward or backward in time. Color Key: Science Highlights (green); People and Events (orange);

  9. Modification of laminar flow ultrafine condensation particle counters for the enhanced detection of 1 nm condensation nuclei

    SciTech Connect (OSTI)

    Kuang, C.; Chen, M.; McMurry, P. H.; Wang, J.

    2011-10-01

    This paper describes simple modifications to thermally diffusive laminar flow ultrafine condensation particle counters (UCPCs) that allow detection of {approx}1 nm condensation nuclei with much higher efficiencies than have been previously reported. These nondestructive modifications were applied to a commercial butanol based UCPC (TSI 3025A) and to a diethylene glycol-based UCPC (UMN DEG-UCPC). Size and charge dependent detection efficiencies using the modified UCPCs (BNL 3025A and BNL DEGUCPC) were measured with high resolution mobility classified aerosols composed of NaCl, W, molecular ion standards of tetraalkyl ammonium bromide, and neutralizer-generated ions. With negatively charged NaCl aerosol, the BNL 3025A and BNL DEGUCPC achieved detection efficiencies of 37% (90x increase over TSI 3025A) at 1.68 nm mobility diameter (1.39 nm geometric diameter) and 23% (8x increase over UMN DEG-UCPC) at 1.19 nm mobility diameter (0.89 nm geometric diameter), respectively. Operating conditions for both UCPCs were identified that allowed negatively charged NaCl and W particles, but not negative ions of exactly the same mobility size, to be efficiently detected. This serendipitous material dependence, which is not fundamentally understood, suggests that vapor condensation might sometimes allow for the discrimination between air 'ions' and charged 'particles.' As a detector in a scanning mobility particle spectrometer (SMPS), a UCPC with this strong material dependence would allow for more accurate measurements of sub-2 nm aerosol size distributions due to the reduced interference from neutralizer-generated ions and atmospheric ions, and provide increased sensitivity for the determination of nucleation rates and initial particle growth rates.

  10. Pulsed-N{sub 2} assisted growth of 5-20 nm thick β-W films

    SciTech Connect (OSTI)

    Narasimham, Avyaya J.; Green, Avery; Matyi, Richard J.; Khare, Prasanna; Vo, Tuan; Diebold, Alain; LaBella, Vincent P.

    2015-11-15

    A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N{sub 2} gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X-ray diffraction patterns were utilized to determine the crystal structure, lattice constant and crystal size using the LeBail method. The flow rate of Nitrogen gas (continuous vs. pulsing) had significant impact upon the crystallinity and formation of β-phase W.

  11. ALD TiO2-Al2O3 Stack: An Improved Gate Dielectrics on Ga-polar GaN MOSCAPs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wei, Daming; Edgar, James H.; Briggs, Dayrl P.; Srijanto, Bernadeta R.; Retterer, Scott T.; Meyer, III, Harry M.

    2014-10-15

    This research focuses on the benefits and properties of TiO2-Al2O3 nano-stack thin films deposited on Ga2O3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO2, 7.1 nm Al2O3 and 2 nm Ga2O3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectron spectroscopy (XPS) depth profile, was negligible for GaN pretreated bymore » thermal oxidation in O2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO2-Al2O3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al2O3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 1011 cm-2. The gate leakage current density (J=2.81× 10-8 A/cm2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO2/Al2O3 for serving as the gate oxide on Ga2O3/GaN based MOS devices.« less

  12. Optical characteristics of nanocrystalline Al{sub x}Ga{sub 1?x}N thin films deposited by hollow cathode plasma-assisted atomic layer deposition

    SciTech Connect (OSTI)

    Goldenberg, Eda; Ozgit-Akgun, Cagla; Biyikli, Necmi; Kemal Okyay, Ali

    2014-05-15

    Gallium nitride (GaN), aluminum nitride (AlN), and Al{sub x}Ga{sub 1?x}N films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200?C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and Al{sub x}Ga{sub 1?x}N films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2?nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4?nm when the annealing duration increased from 30?min to 2?h (800?C). For all films, the average optical transmission was ?85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and Al{sub x}Ga{sub 1?x}N were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (??=?550?nm) with the increased Al content x (0???x???1), while the extinction coefficients (k) were approximately zero in the VIS spectrum (>400?nm). Postdeposition annealing at 900?C for 2?h considerably lowered the refractive index value of GaN films (2.331.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95?eV, and it decreased to 3.90?eV for films annealed at 800?C for 30?min and 2?h. On the other hand, this value increased to 4.1?eV for GaN films annealed at 900?C for 2?h. This might be caused by Ga{sub 2}O{sub 3} formation and following phase change. The optical bandgap value of as-deposited Al{sub x}Ga{sub 1?x}N films decreased from 5.75 to 5.25?eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not affect the bandgap of Al-rich films.

  13. Ternary Dy-Er-Al magnetic refrigerants

    DOE Patents [OSTI]

    Gschneidner, Jr., Karl A.; Takeya, Hiroyuki

    1995-07-25

    A ternary magnetic refrigerant material comprising (Dy.sub.1-x Er.sub.x)Al.sub.2 for a magnetic refrigerator using the Joule-Brayton thermodynamic cycle spanning a temperature range from about 60K to about 10K, which can be adjusted by changing the Dy to Er ratio of the refrigerant.

  14. Ternary Dy-Er-Al magnetic refrigerants

    DOE Patents [OSTI]

    Gschneidner, K.A. Jr.; Takeya, Hiroyuki

    1995-07-25

    A ternary magnetic refrigerant material comprising (Dy{sub 1{minus}x}Er{sub x})Al{sub 2} for a magnetic refrigerator using the Joule-Brayton thermodynamic cycle spanning a temperature range from about 60K to about 10K, which can be adjusted by changing the Dy to Er ratio of the refrigerant. 29 figs.

  15. Optically confined polarized resonance Raman studies in identifying crystalline orientation of sub-diffraction limited AlGaN nanostructure

    SciTech Connect (OSTI)

    Sivadasan, A. K. Patsha, Avinash; Dhara, Sandip

    2015-04-27

    An optical characterization tool of Raman spectroscopy with extremely weak scattering cross section tool is not popular to analyze scattered signal from a single nanostructure in the sub-diffraction regime. In this regard, plasmonic assisted characterization tools are only relevant in spectroscopic studies of nanoscale object in the sub-diffraction limit. We have reported polarized resonance Raman spectroscopic (RRS) studies with strong electron-phonon coupling to understand the crystalline orientation of a single AlGaN nanowire of diameter ∼100 nm. AlGaN nanowire is grown by chemical vapor deposition technique using the catalyst assisted vapor-liquid-solid process. The results are compared with the high resolution transmission electron microscopic analysis. As a matter of fact, optical confinement effect due to the dielectric contrast of nanowire with respect to that of surrounding media assisted with electron-phonon coupling of RRS is useful for the spectroscopic analysis in the sub-diffraction limit of 325 nm (λ/2N.A.) using an excitation wavelength (λ) of 325 nm and near ultraviolet 40× far field objective with a numerical aperture (N.A.) value of 0.50.

  16. Al2000-12.pdf | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Al2000-12.pdf Al2000-12.pdf PDF icon Al2000-12.pdf More Documents & Publications AL2007-02.doc&0; Audit Report: OAS-L-07-17 Audit Report: OAS-L-07-18...

  17. Amorphous and nanocrystalline phase formation in highly-driven Al-based binary alloys

    SciTech Connect (OSTI)

    Kalay, Yunus Eren

    2008-10-15

    other. This deviation indicates an adiabatic type solidification path where heat of fusion is reabsorbed. It is interesting that this particle size range is also consistent with the appearance of a microcellular growth. While no glass formation is observed within this system, the smallest size powders appear to consist of a mixture of nanocrystalline Si and Al. Al-Sm alloys have been investigated within a composition range of 34 to 42 wt% Sm. Gas atomized powders of Al-Sm are investigated to explore the morphological and structural hierarchy that correlates with different degrees of departure from full equilibrium conditions. The resultant powders show a variety of structural selection with respect to amount of undercooling, with an amorphous structure appearing at the highest cooling rates. Because of the chaotic nature of gas atomization, Cu-block melt-spinning is used to produce a homogeneous amorphous structure. The as-quenched structure within Al-34 to 42 wt% Sm consists of nanocrystalline fcc-Al (on the order of 5 nm) embedded in an amorphous matrix. The nucleation density of fcc-Al after initial crystallization is on the order of 10{sup 22}-10{sup 23} m{sup -3}, which is 10{sup 5}-10{sup 6} orders of magnitude higher than what classical nucleation theory predicts. Detailed analysis of liquid and as-quenched structures using high energy synchrotron X-ray diffraction, high energy transmission electron microscopy, and atom probe tomography techniques revealed an Al-Sm network similar in appearance to a medium range order (MRO) structure. A model whereby these MRO clusters promote the observed high nucleation density of fcc-Al nanocrystals is proposed. The devitrification path was identified using high temperature, in-situ, high energy synchrotron X-ray diffraction techniques and the crystallization kinetics were described using an analytical Johnson-Mehl-Avrami (JMA) approach.

  18. Room temperature photoluminescence from In{sub x}Al{sub (1?x)}N films deposited by plasma-assisted molecular beam epitaxy

    SciTech Connect (OSTI)

    Kong, W. Jiao, W. Y.; Kim, T. H.; Brown, A. S.; Mohanta, A.; Roberts, A. T.; Fournelle, J.; Losurdo, M.; Everitt, H. O.

    2014-09-29

    InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 1012?nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of In{sub x}Al{sub (1?x)}N were comparatively investigated for indium compositions ranging from x?=?0.092 to 0.235, including x?=?0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

  19. Acquisition letter No. AL 2015-05 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    letter No. AL 2015-05 Acquisition letter No. AL 2015-05 DATE: May 12, 2015 TO: Procurement Directors/Contracting Officers FROM: Director Contract and Financial Assistance Policy Division Office of Policy Office of Acquisition and Project Management SUBJECT: Acquisition Letters Remaining in Effect SUMMARY: Acquisition letter 2015-05 has been issued. It lists ALs currently in effect and the discontinued ALs, along with the reason why the AL is no longer in effect. This Flash will be available

  20. DOE - Office of Legacy Management -- Tennessee Valley Authority - AL 01

    Office of Legacy Management (LM)

    Tennessee Valley Authority - AL 01 FUSRAP Considered Sites Site: TENNESSEE VALLEY AUTHORITY (AL.01 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Muscle Shoals , Alabama AL.01-1 Evaluation Year: 1987 AL.01-2 Site Operations: Performed research and development during the early 1950s at an onsite lab and pilot plant on a process to recover uranium during the production of phosphate fertilizer. AL.01-1 Site Disposition: Eliminated -

  1. Preparation of Mg/Al-LDHs intercalated with dodecanoic acid and investigation of its antiwear ability

    SciTech Connect (OSTI)

    Zhao, Dong; Bai, Zhimin; Zhao, Fuyan

    2012-11-15

    Graphical abstract: Comparable studies of nano Mg/Al-LDHs powder on the anti-wear properties of lubricating oil were carried out on four-ball and gear testing machine. Mg/Al-NO{sub 3}{sup −}-LDHs and Mg/Al-DA-LDHs powder in base oil possess an excellent friction-reducing property, with a friction coefficient at 23.9% and 22.2% which are lower than that of the base oil Highlights: ► We synthesized nano Mg/Al-NO{sub 3}{sup −}(DA)-LDHs via coprecipitation and anion exchange. ► The optimal exchanging condition is as follows: water dispersion and pH value of 5. ► The tribological properties of LDHs were studied on four-ball and gear machine. ► We reported nano LHDs as anti-wear materials in lubricates for the first time. ► The greatest decline in friction coefficient of lubricates with LDHs is up to 23.9%. -- Abstract: Layered double hydroxides (LDHs) intercalated with dodecanoic acid have been prepared by anion exchange with Mg/Al-NO{sub 3}{sup −}-LDHs as the precursor under acid condition with water and ethanol as the dispersion medium. The obtained materials were characterized by X-ray diffraction (XRD), thermogravimetric and differential thermal analyser (TG–DTA), Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and BET. Patterns of XRD and FTIR show that interlayer nitrate ions have substituted with dodecanoic acid and the gallery height has increased from 0.88 nm to 1.99 nm. The interlayer distance of the intercalated materials increases with the increase of pH value due to the different arrangement of interlayer anions. The tribological performance of LDHs precursor and intercalated LDHs in base oil were studied for the first time by using four-ball wear machine and gear testing machine. Experimental results show that the LDHs precursor and intercalated LDHs powder are excellent in friction-reducing, with decreases in friction coefficient by 23.9% and 22.2% respectively comparing with base oil.

  2. Effect of Zr on microstructures and mechanical properties of an Al-Mg-Si-Cu-Cr alloy prepared by low frequency electromagnetic casting

    SciTech Connect (OSTI)

    Meng, Yi, E-mail: yimonmy@sina.com; Cui, Jianzhong; Zhao, Zhihao; He, Lizi

    2014-06-01

    The Al-1.6Mg-1.2Si-1.1Cu-0.15Cr (all in wt. %) alloys with and without Zr addition prepared by low frequency electromagnetic casting process were investigated by using the optical microscope, scanning electron microscope and transmission electron microscope equipped with energy dispersive analytical X-ray. The effects of Al{sub 3}Zr phases on the microstructures and mechanical properties during solidification, homogenization, hot extrusion and solid solution were studied. The results show that Al{sub 3}Zr phases reduce the grain size by ? 29% and promote the formation of an equiaxed grain structure during solidification. Numerous spherical Al{sub 3}Zr dispersoids with 3560 nm in diameters precipitate during homogenization, and these fine dispersoids change little during subsequent hot extrusion and solid solution. Adding 0.15 wt. % Zr results in no recrystallization after hot extrusion and partial recrystallization after solid solution, while the recrystallized grain size is 400550 ?m in extrusion direction in the Zr-free alloy. In addition, adding 0.15 wt. % Zr can obviously promote Q? phase precipitation, while the ?? phases are predominant in the alloy without Zr. Adding 0.15 wt. % Zr, the ultimate tensile strength of the T6 treated alloy increases by 45 MPa, while the elongation remains about 16.7%. - Highlights: Minor Zr can refine as-cast grains of the LFEC Al-Mg-Si-Cu-Cr alloy. L1{sub 2} Al{sub 3}Zr phases with 3560 nm in diameter precipitate during homogenization. L1{sub 2} and DO{sub 22} Al{sub 3}Zr phases result in partial recrystallization after solid solution. Minor Zr can promote the precipitation of Q? phases. Mechanical properties of Al-Mg-Si-Cu-Cr-Zr alloy are higher than those of AA7005.

  3. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Greenlee, Jordan D. Anderson, Travis J.; Koehler, Andrew D.; Weaver, Bradley D.; Kub, Francis J.; Hobart, Karl D.; Specht, Petra; Dubon, Oscar D.; Luysberg, Martina; Weatherford, Todd R.

    2015-08-24

    Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 10{sup 14} H{sup +}/cm{sup 2}, the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively.

  4. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  5. Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells

    SciTech Connect (OSTI)

    Huang, Cheng-Ying Law, Jeremy J. M.; Rodwell, Mark J. W.; Lu, Hong; Gossard, Arthur C.; Jena, Debdeep

    2014-03-28

    We have investigated the growth and electron transport in In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} two dimensional electron gases (2DEG) and compared their properties with In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As 2DEGs. For 10?nm thick InGaAs wells, the electron mobility of InGaAs/AlAsSb 2DEGs is comparable to that of InGaAs/InAlAs 2DEGs. Upon thinning the wells to 3?nm, the 2DEG mobility is degraded quickly and stronger interface roughness scattering is observed for InGaAs/AlAsSb heterointerfaces than for InGaAs/InAlAs heterointerfaces. Changing the group-V exposure between As and Sb during growth interruptions at the InGaAs/AlAsSb interfaces did not significantly change the 2DEG mobility. With the insertion of a two monolayer InAlAs at the InGaAs/AlAsSb interfaces, the interface roughness scattering is reduced and the mobility greatly increased. The room temperature 2DEG mobility shows 66% improvement from 1.63??10{sup 3} cm{sup 2}/Vs to 2.71??10{sup 3}?cm{sup 2}/Vs for a 3?nm InGaAs well.

  6. Electronic transport through Al/InN nanowire/Al junctions (Journal...

    Office of Scientific and Technical Information (OSTI)

    Report Number(s): SAND2016-0883J Journal ID: ISSN 0003-6951; APPLAB; 619001 GrantContract Number: AC04-94AL85000 Type: Accepted Manuscript Journal Name: Applied Physics Letters ...

  7. Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

    SciTech Connect (OSTI)

    Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A.; Hollaender, B.; Heuken, M.

    2012-11-01

    Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

  8. Electronic properties of binary and mixed [RMNH]{sub n} (R=H,CH{sub 3}, M=Al,Ga,In) oligomers

    SciTech Connect (OSTI)

    Oranskaya, A. A. Pomogaeva, A. V. Timoshkin, A. Y.

    2015-03-30

    Theoretical investigation of structural and electronic properties is presented for the rod-like oligomers R{sub 3}-[MRNH]{sub 3n}-H{sub 3} and [RMNH]{sub n+1} (M=Ga,Al,In R=H,CH{sub 3}) of different lengths. Electronic structures of the oligomers with and without substitutions of Ga atoms with Al or In were studied at DFT level of theory. Clusters up to 8 nm of length were considered. A type of terminal groups of the oligomers is found to have a dominant influence on their electronic properties.

  9. Ni{sub 3}Al technology transfer

    SciTech Connect (OSTI)

    Sikka, V.K.; Viswanathan, S.; Santella, M.L.

    1997-04-01

    Ductile Ni{sub 3}Al and Ni{sub 3}Al-based alloys have been identified for a range of applications. These applications require the use of material in a variety of product forms such as sheet, plate, bar, wire, tubing, piping, and castings. Although significant progress has been made in the melting, casting, and near-net-shape forming of nickel aluminides, some issues still remain. These include the need for: (1) high-strength castable composition for many applications that have been identified; (2) castability (mold type, fluidity, hot-shortness, porosity, etc.); (3) weld reparability of castings; and (4) workability of cast or powder metallurgy product to sheet, bar, and wire. The four issues listed above can be {open_quotes}show stoppers{close_quotes} for the commercial application of nickel aluminides. This report describes the work completed to address some of these issues during FY 1996.

  10. OP-AL-0002-001.PDF

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Doc. ID: OP-AL-0002-001.doc Caretaker Date: 2000/08/03 This authorized list is effective 08/03/2000 and specifies those individuals who have been authorized for Caretaker Operation 1. Aigeldinger, Georg 2. Bucher, Stephanie 3. Choi, Jaewu 4. Koch, Kevin 5. Lian, Kun 6. Ling, Zhong Geng 7. Manohara, Harish 8. Morikawa, Eizi 9. Palshin, Vadim 10. Rupp, Louis 11. Schoonmaker, Mike 12. Scott, John 13. Sprunger, Phil 14. Tittsworth, Roland 15. Xu, Jie Authorization: ________________ ________

  11. OP-AL-0003-001.PDF

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Doc. ID: OP-AL-0003-001.doc Accelerator Operators Date: 2000/08/03 This document is effective 08/4/2000 and specifies those individuals who are authorized to operate the Electron Accelerators at CAMD. 1. Ben Craft 2. Larry Oliszwesky 3. Paul Jines 4. Don Patterson 5. Yongzhang Huang Authorization: ____________________ ________ ____________________ ________ F. Josef Hormes Date Benjamin Craft III Date ____________________ ________ Lorraine Marceau-Day

  12. Synthesis and structural characterization of a new aluminum oxycarbonitride, Al{sub 5}(O, C, N){sub 4}

    SciTech Connect (OSTI)

    Inuzuka, Haruya; Kaga, Motoaki; Urushihara, Daisuke; Nakano, Hiromi; Asaka, Toru; Fukuda, Koichiro

    2010-11-15

    A new aluminum oxycarbonitride, Al{sub 5}(O{sub x}C{sub y}N{sub 4-x-y}) (x{approx}1.4 and y{approx}2.1), has been synthesized and characterized by X-ray powder diffraction, transmission electron microscopy and electron energy loss spectroscopy (EELS). The title compound was found to be hexagonal with space group P6{sub 3}/mmc, Z=2, and unit-cell dimensions a=0.328455(6) nm, c=2.15998(3) nm and V=0.201805(6) nm{sup 3}. The atom ratios O:C:N were determined by EELS. The final structural model, which is isomorphous with that of (Al{sub 4.4}Si{sub 0.6})(O{sub 1.0}C{sub 3.0}), showed the positional disordering of one of the three types of Al sites. The maximum-entropy method-based pattern fitting (MPF) method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensity partitioning was minimized. The reliability indices calculated from the MPF were R{sub wp}=6.94% (S=1.22), R{sub p}=5.34%, R{sub B}=1.35% and R{sub F}=0.76%. The crystal was an inversion twin. Each twin-related individual was isostructural with Al{sub 5}C{sub 3}N (space group P6{sub 3}mc, Z=2). - Graphical abstract: A new oxycarbonitride discovered in the Al-O-C-N system, Al{sub 5}(O{sub 1.4}C{sub 2.1}N{sub 0.5}). The crystal is an inversion twin, and hence the structure is represented by a split-atom model. The three-dimensional electron density distributions are determined by the maximum-entropy methods-based pattern fitting, being consistent with the disordered structural model. Display Omitted

  13. A novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} for near UV white light-emitting diodes

    SciTech Connect (OSTI)

    Yang, Zhigang; Zhao, Zhengyan; Shi, Yurong; Wang, Yuhua

    2013-10-15

    Graphical abstract: - Highlights: Novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} was prepared by solid-state reaction. Excitation spectra suggested an obvious absorption in near-ultraviolet region. Under 392 nm excitation, the phosphors exhibited a red emission at 614 nm. Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} could be potentially applied in near UV white LEDs. - Abstract: A novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} was synthesized using a solid-state reaction method, and its luminescence characteristics and charge compensators effect (Li{sup +}, Na{sup +}, K{sup +}) were investigated. The excitation spectra showed a obvious absorption in near-ultraviolet region. Under 392 nm excitation, the phosphors exhibited an intense red emission at 614 nm. The Commission Internationale de lEclairage (CIE) chromaticity coordinates and quantum efficiency (QE) were (0.65, 0.35) and 62.3%, respectively. The good color saturation, high quantum efficiency and small thermal-quenching properties indicate that Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} could be potentially applied in near UV white light-emitting diodes.

  14. KCAT, Xradia, ALS and APS Performance Summary

    SciTech Connect (OSTI)

    Waters, A; Martz, H; Brown, W

    2004-09-30

    At Lawrence Livermore National Laboratory (LLNL) particular emphasis is being placed on the nondestructive characterization (NDC) of components, subassemblies and assemblies of millimeter-size extent with micrometer-size features (mesoscale). These mesoscale objects include materials that vary widely in composition, density, geometry and embedded features. Characterizing these mesoscale objects is critical for corroborating the physics codes that underlie LLNL's Stockpile Stewardship mission. In this report we present results from our efforts to quantitatively characterize the performance of several x-ray systems in an effort to benchmark existing systems and to determine which systems may have the best potential for our mesoscale imaging needs. Several different x-ray digital radiography (DR) and computed tomography (CT) systems exist that may be applicable to our mesoscale object characterization requirements, including microfocus and synchrotron systems. The systems we have benchmarked include KCAT (LLNL developed) and Xradia {mu}XCT (Xradia, Inc., Concord, CA), both microfocus systems, and Beamline 1-ID at the Advance Photon Source (APS) and the Tomography Beamline at the Advanced Light Source (ALS), both synchrotron based systems. The ALS Tomography Beamline is a new installation, and the data presented and analyzed here is some of the first to be acquired at the facility. It is important to note that the ALS system had not yet been optimized at the time we acquired data. Results for each of these systems has been independently documented elsewhere. In this report we summarize and compare the characterization results for these systems.

  15. Luminescence and superradiance in electron-beam-excited Al{sub x}Ga{1-sub x}N

    SciTech Connect (OSTI)

    Bokhan, P. A.; Gugin, P. P.; Zakrevsky, Dm. E.; Malin, T. V.; Zhuravlev, K. S.; Osinnykh, I. V.; Solomonov, V. I.; Spirina, A. V.

    2014-09-21

    Luminescence and superradiance characteristics of 0.51.2-?m thick Al{sub x}Ga{sub 1-x}N films grown by molecular-beam epitaxy on sapphire substrates were studied under excitation of the films with low-energy (<20 keV) and high-energy (170 keV) electron beams. In both cases, the luminescence spectra looked quite similarly; they exhibited a band-edge luminescence with x-dependent wavelength ranging from 365 nm to 310 nm and a broadband emission taking over the whole visible spectral region. Superradiance within the broad band was obtained by pumping the samples with powerful an electron beam in the form of an open-discharge-generated filament.

  16. Effect of neutron irradiation on defect evolution in Ti3SiC2 and Ti2AlC

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tallman, Darin J.; He, Lingfeng; Garcia-Diaz, Brenda L.; Hoffman, Elizabeth N.; Kohse, Gordon; Sindelar, Robert L.; Barsoum, Michel W.

    2015-10-23

    Here, we report on the characterization of defects formed in polycrystalline Ti3SiC2 and Ti2AlC samples exposed to neutron irradiation – up to 0.1 displacements per atom (dpa) at 350 ± 40 °C or 695 ± 25 °C, and up to 0.4 dpa at 350 ± 40 °C. Black spots are observed in both Ti3SiC2 and Ti2AlC after irradiation to both 0.1 and 0.4 dpa at 350 °C. After irradiation to 0.1 dpa at 695 °C, small basal dislocation loops, with a Burgers vector of b = 1/2 [0001] are observed in both materials. At 9 ± 3 and 10 ±more » 5 nm, the loop diameters in the Ti3SiC2 and Ti2AlC samples, respectively, were comparable. At 1 × 1023 loops/m3, the dislocation loop density in Ti2AlC was ≈1.5 orders of magnitude greater than in Ti3SiC2, at 3 x 1021 loops/m3. After irradiation at 350 °C, extensive microcracking was observed in Ti2AlC, but not in Ti3SiC2. The room temperature electrical resistivities increased as a function of neutron dose for all samples tested, and appear to saturate in the case of Ti3SiC2. The MAX phases are unequivocally more neutron radiation tolerant than the impurity phases TiC and Al2O3. Based on these results, Ti3SiC2 appears to be a more promising MAX phase candidate for high temperature nuclear applications than Ti2AlC.« less

  17. Bose-Einstein condensate in a light-induced vector gauge potential using 1064-nm optical-dipole-trap lasers

    SciTech Connect (OSTI)

    Fu Zhengkun; Wang Pengjun; Chai Shijie; Huang Lianghui; Zhang Jing

    2011-10-15

    Using two crossed 1064-nm optical-dipole-trap lasers to be the Raman beams, an effective vector gauge potential for Bose-Einstein condensed {sup 87}Rb in the F=2 hyperfine ground state is experimentally created. The moderate strength of the Raman coupling still can be achieved when the detuning from atomic resonance is larger than the excited-state fine structure, since rubidium has 15 nm energy-level spitting. The atoms at the far detuning of the Raman coupling are loaded adiabatically into the dressed states by ramping the homogeneous bias magnetic field with different paths and the dressed states with different energies are studied experimentally. The experimental scheme can be easily extended to produce the synthetic magnetic or electric field by means of a spatial or time dependence of the effective vector potential.

  18. Electrical and chemical properties of XeCl*(308 nm) exciplex lamp created by a dielectric barrier discharge

    SciTech Connect (OSTI)

    Baadj, S.; Harrache, Z. Belasri, A.

    2013-12-15

    The aim of this work is to highlight, through numerical modeling, the chemical and the electrical characteristics of xenon chloride mixture in XeCl* (308 nm) excimer lamp created by a dielectric barrier discharge. A temporal model, based on the Xe/Cl{sub 2} mixture chemistry, the circuit and the Boltzmann equations, is constructed. The effects of operating voltage, Cl{sub 2} percentage in the Xe/Cl{sub 2} gas mixture, dielectric capacitance, as well as gas pressure on the 308-nm photon generation, under typical experimental operating conditions, have been investigated and discussed. The importance of charged and excited species, including the major electronic and ionic processes, is also demonstrated. The present calculations show clearly that the model predicts the optimal operating conditions and describes the electrical and chemical properties of the XeCl* exciplex lamp.

  19. Award for Nuclear Chemistry LOS ALAMOS, N.M., Aug. 22, 2016-Los Alamos National Laboratory chemist David

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    scientist honored by ACS for innovative studies August 22, 2016 David L. Clark selected for 2017 Glenn T. Seaborg Award for Nuclear Chemistry LOS ALAMOS, N.M., Aug. 22, 2016-Los Alamos National Laboratory chemist David L. Clark has been selected as the 2017 recipient of the Glenn T. Seaborg Award for Nuclear Chemistry, sponsored by the American Chemical Society Division of Nuclear Chemistry and Technology. "Dave is well-known for his breadth of accomplishment in actinide synthesis,

  20. Sub-5 nm Domains in Ordered Poly(cyclohexylethylene)-block-poly(methyl methacrylate) Block Polymers for Lithography.

    SciTech Connect (OSTI)

    Kennemur, Justin; Yao, Li; Bates, Frank Stephen; Hillmyer, Marc

    2014-01-01

    A series of poly(cyclohexylethylene)-block-poly- (methyl methacrylate) (PCHE PMMA) diblock copolymers with varying molar mass (4.9 kg/mol Mn 30.6 kg/mol) and narrow molar mass distribution were synthesized through a combination of anionic and atom transfer radical polymerization (ATRP) techniques. Heterogeneous catalytic hydrogenation of -(hydroxy)polystyrene (PS-OH) yielded -(hydroxy)poly(cyclohexylethylene) (PCHEOH) with little loss of hydroxyl functionality. PCHE-OH was reacted with -bromoisobutyryl bromide (BiBB) to produce an ATRP macroinitiator used for the polymerization of methyl methacrylate. PCHE PMMA is a glassy, thermally stable material with a large effective segment segment interaction parameter, eff = (144.4 6.2)/T (0.162 0.013), determined by meanfield analysis of order-to-disorder transition temperatures (TODT) measured by dynamic mechanical analysis and differential scanning calorimetry. Ordered lamellar domain pitches (9 D 33 nm) were identified by small-angle X-ray scattering from neat BCPs containing 43 52 vol % PCHE ( f PCHE). Atomic force microscopy was used to show 7.5 nm lamellar features (D = 14.8 nm) which are some of the smallest observed to date. The lowest molar mass sample (Mn = 4.9 kg/mol, f PCHE = 0.46) is characterized by TODT = 173 3 C and sub-5 nm nanodomains, which together with the sacrificial properties of PMMA and the high overall thermal stability place this material at the forefront of high- systems for advanced nanopatterning applications.