Sample records for 019-10 al nm

  1. Efficient charge carrier injection into sub-250?nm AlGaN multiple quantum well light emitting diodes

    SciTech Connect (OSTI)

    Mehnke, Frank, E-mail: mehnke@physik.tu-berlin.de; Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Rass, Jens; Wernicke, Tim [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, Michael [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2014-08-04T23:59:59.000Z

    The design and Mg-doping profile of AlN/Al{sub 0.7}Ga{sub 0.3}N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250?nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246?nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235?nm and 263?nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234?nm with 14.5??W integrated optical output power and an external quantum efficiency of 0.012% at 18.2?A/cm{sup 2}.

  2. Cavity design for improved electrical injection in InAlGaP/AlGaAs visible (639--661 nm) vertical-cavity surface-emitting laser diodes

    SciTech Connect (OSTI)

    Schneider, R.P. Jr.; Lott, J.A. (Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States))

    1993-08-16T23:59:59.000Z

    A novel optical cavity design for improved electrical injection in visible vertical-cavity surface-emitting laser (VCSEL) diodes employing an InGaP/InAlGaP strained quantum-well active optical cavity and AlAs/Al[sub 0.5]Ga[sub 0.5]As distributed Bragg reflectors (DBRs) is described. The cavity design was determined by measuring the lasing threshold current density of visible edge-emitting laser diodes with AlAs/Al[sub 0.5]Ga[sub 0.5]As DBR cladding layers. By inserting InAlP spacer layers between the active region and the DBR cladding, significant improvement in the performance of the edge-emitting lasers was achieved. This approach was then applied to the design of visible VCSEL diodes, and resulted in the first demonstration of room-temperature electrically injected lasing, over the wavelength range 639--661 nm. The visible VCSELs, with a diameter of 20 [mu]m, exhibit pulsed output power of 3.4 mW at 650 nm, and continue to lase at a duty cycle of 40%. The threshold current was 30 mA, with a low threshold voltage (2.7 V) and low series resistance ([lt]15 [Omega]).

  3. Vertical-external-cavity surface-emitting 625-nm laser upon optical pumping of an InGaP/AlGaInP nanostructure with a Bragg mirror

    SciTech Connect (OSTI)

    Kozlovskii, Vladimir I; Lavrushin, B M; Skasyrsky, Yan K [P N Lebedev Physical Institute, Russian Academy of Sciences, Moscow (Russian Federation); Tiberi, M D [Principia Light Works Inc., Woodland Hills, CA (United States)

    2009-08-31T23:59:59.000Z

    Pulsed lasing is obtained in a multilayer quantum-well InGaP/AlGaInP structure in a cavity with an external mirror and a Bragg AlAs/AlGaAs mirror pumped by the 532-nm second harmonic from a diode-pumped Q-switched Nd:YAG laser. Lasing is obtained at the TEM{sub 00} fundamental transverse mode of the cavity at a wavelength of 625 nm. The pulse beam power was 3.1 W and the radiation divergence achieved a diffraction limit of 10-12 mrad for 5-ns pulses with a repetition rate of 6 kHz. (lasers)

  4. Synthesis and characterization of 10?nm thick piezoelectric AlN films with high c-axis orientation for miniaturized nanoelectromechanical devices

    SciTech Connect (OSTI)

    Zaghloul, Usama, E-mail: uzheiba@andrew.cmu.edu [Electrical and Computer Engineering Department, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Microelectronics Department, Electronics Research Institute, 33 El Bohouth St., Dokki, Giza (Egypt); Piazza, Gianluca [Electrical and Computer Engineering Department, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

    2014-06-23T23:59:59.000Z

    The scaling of piezoelectric nanoelectromechanical systems (NEMS) is challenged by the synthesis of ultrathin and high quality piezoelectric films on very thin electrodes. We report the synthesis and characterization of the thinnest piezoelectric aluminum nitride (AlN) films (10?nm) ever deposited on ultrathin platinum layers (2–5?nm) using reactive sputtering. X-ray diffraction, high-resolution transmission electron microscopy, and fast Fourier transform analyses confirmed the proper crystal orientation, fine columnar texture, and the continuous lattice structure within individual grains in the deposited AlN nanometer thick films. The average extracted d{sub 31} piezoelectric coefficient for the synthesized films is ?1.73 pC/N, which is comparable to the reported values for micron thick and highly c-axis oriented AlN films. The 10?nm AlN films were employed to demonstrate two different types of optimized piezoelectric nanoactuators. The unimorph actuators exhibit vertical displacements as large as 1.1??m at 0.7?V for 25??m long and 30?nm thick beams. These results have a great potential to realize miniaturized NEMS relays with extremely low voltage, high frequency resonators, and ultrasensitive sensors.

  5. Nonlinear absorption and optical strength of BaF{sub 2} and Al{sub 2}O{sub 3} at the wavelength of 248 nm

    SciTech Connect (OSTI)

    Morozov, Nikolai V; Sergeev, P B [P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation); Reiterov, V M [All-Russian Scientific Centre 'S.I. Vavilov State Optical Institute', St Petersburg (Russian Federation)

    1999-11-30T23:59:59.000Z

    An experimental investigation was made of the dependence of the transmission of BaF{sub 2} and Al{sub 2}O{sub 3} samples on the intensity of KrF-laser radiation ({lambda} = 248 nm) pulses of 85 ns duration. The two-photon absorption coefficients were found at {lambda} = 248 nm and their values for these two crystals were 0.5 {+-} 0.2 and 2 {+-} 1 cm Gw{sup -1}. The surface and bulk laser breakdown thresholds were determined for these samples. (nonlinear optical phenomena)

  6. A 77 GHz Transceiver for Automotive Radar System Using a120nm In AlAs/In GaAs Metamorphic HEMTs

    E-Print Network [OSTI]

    Kwon, Youngwoo

    A 77 GHz Transceiver for Automotive Radar System Using a120nm 0.4 0.35 In AlAs/In GaAs Metamorphic-mail:ykwon@snu.ac.kr) Abstract -- In this work, we demonstrate a compact 77GHz single-chip transceiver for an automotive radar at the transmitter and a 5dB conversion gain at the receiver. Index Terms -- Automotive radar, 77GHz, MHEMT, MMIC

  7. Visible (657 nm) InGaP/InAlGaP strained quantum well vertical-cavity surface-emitting laser

    SciTech Connect (OSTI)

    Schneider, R.P. Jr.; Bryan, R.P.; Lott, J.A. (Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)); Olbright, G.R. (Photonics Research, Inc., Broomfield, Colorado 80021 (United States))

    1992-04-13T23:59:59.000Z

    We report the first visible (657 nm) vertical-cavity surface-emitting laser. The photopumped undoped structure was grown using low-pressure metalorganic vapor-phase epitaxy in a single-growth sequence on misoriented GaAs substrates. The optical cavity consists of an In{sub 0.54}Ga{sub 0.46}P/In{sub 0.48}(Al{sub 0.7}Ga{sub 0.3}){sub 0.52} P strained quantum-well active region and a lattice-matched In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52} P (0.7{le}{ital y}{le}1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al{sub 0.5}Ga{sub 0.5}As/AlAs quarter-wave stacks. Room-temperature optically pumped lasing was achieved with a very low-threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser-diode arrays for a number of applications including laser projection displays, holographic memories, and plastic fiber communication.

  8. Sub-250?nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO{sub 2}/SiO{sub 2} dielectric mirrors

    SciTech Connect (OSTI)

    Kao, Tsung-Ting; Liu, Yuh-Shiuan; Mahbub Satter, Md.; Li, Xiao-Hang; Lochner, Zachary; Douglas Yoder, P.; Detchprohm, Theeradetch; Dupuis, Russell D.; Shen, Shyh-Chiang, E-mail: shyh.shen@ece.gatech.edu; Ryou, Jae-Hyun [School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250 (United States)] [School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250 (United States); Fischer, Alec M.; Wei, Yong; Xie, Hongen; Ponce, Fernando A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)] [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

    2013-11-18T23:59:59.000Z

    We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an Al{sub x}Ga{sub 1?x}N-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250?kW/cm{sup 2}. After employing high-reflectivity SiO{sub 2}/HfO{sub 2} dielectric mirrors on both facets, the threshold pumping power density was further reduced to 180?kW/cm{sup 2}. The internal loss and threshold modal gain can be calculated as 2?cm{sup ?1} and 10.9?cm{sup ?1}, respectively.

  9. Highly reliable InGaP/InGaAlP visible light emitting inner stripe lasers with 667 nm lasing wavelength

    SciTech Connect (OSTI)

    Okuda, H.; Ishikawa, M.; Shiozawa, H.; Watanabe, Y.; Itaya, K.; Nitta, K.; Hatakoshi, G.; Kokubun, Y.; Uematsu, Y.

    1989-06-01T23:59:59.000Z

    In order to obtain highly reliable InGaP/InGaAlP inner stripe (IS) lasers, the authors have clarified the relation between the maximum CW operation temperature and other laser characteristics, such as the pulsed threshold current, characteristic temperature, series resistance, and thermal resistance. The Al composition of the cladding layer, the carrier concentration of the p-cladding layer, and the thicknesses of the active layer and cladding layer have been optimized. It was found that an Al composition of 0.7 was the most suitable for the cladding layer, and the optimized carrier concentration was 4 x 10/sup 17/ cm/sup -3/. A maximum temperature of 90/sup 0/C was obtained for a 0.1 /mu/m active layer thickness and a 0.6 /mu/m cladding layer thickness. This is the highest value for InGaP/InGaAlP IS lasers, to our knowledge. In the case of a 0.06 /mu/m active layer thickness and a 0.8 /mu/m cladding layer thickness, a maximum temperature of 75/sup 0/C was obtained. IS lasers with facet coating have been stably operating for more than 8000 h at 40/sup 0/C and 3 mW and for more than 4000 h at 50/sup 0/C and 3 mW.

  10. High performance 70 nm In0.8GaP/In0.4AlAs/In0.35GaAs Metamorphic HEMT With Pd Schottky Contacts

    E-Print Network [OSTI]

    Seo, Kwang Seok

    contacts, due to low diffusivity with InGaP of Pd as well as its high SBH [9], the distance between Schottky contact due to its low diffusion of Pd to InGaP. The fabricated 70 nm MHEMT's with Pd Schottky

  11. The Spectrum of Thorium from 250 nm to 5500 nm: Ritz Wavelengths and Optimized Energy Levels

    E-Print Network [OSTI]

    Redman, Stephen L; Sansonetti, Craig J

    2013-01-01T23:59:59.000Z

    We have made precise observations of a thorium-argon hollow cathode lamp emission spectrum in the region between 350 nm and 1175 nm using a high-resolution Fourier transform spectrometer. Our measurements are combined with results from seven previously published thorium line lists (Giacchetti et al. 1974; Zalubas & Corliss 1974; Zalubas 1976; Palmer & Engleman 1983; Engleman et al. 2003; Lovis & Pepe 2007; Kerber et al. 2008) to re-optimize the energy levels of neutral, singly-, and doubly-ionized thorium (Th I, Th II, and Th III). Using the optimized level values, we calculate accurate Ritz wavelengths for 19679 thorium lines between 250 nm and 5500 nm (40000 1/cm to 1800 1/cm). We have also found 102 new thorium energy levels. A systematic analysis of previous measurements in light of our new results allows us to identify and propose corrections for systematic errors in Palmer & Engleman (1983) and typographical errors and incorrect classifications in Kerber et al. (2008). We also found a la...

  12. Passively modelocked 832 nm vertical-external-cavity surface-emitting

    E-Print Network [OSTI]

    Keller, Ursula

    , focused into an optical spot with dimensions of 100 Ã? 200 mm. The SESAM consisted of an AlAs/Al0.2Ga0.8As DBR, a spacer layer of GaAs0.75P0.25, a 4.8 nm GaAs quantum well and a 2 nm-thick capping layer of Ga

  13. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    improve the room-temperature carrier mobility in wurtzite AlN/GaN/AlN heterostructures, which is limited consider a narrow groove made of InxGa1-xN with small In content x inside a wurtzite AlN/GaN/AlN heteroN 2 nm /GaN 3 nm /AlN 3 nm . A well-known feature of wurtzite heterostructures is a strong buit

  14. Damage thresholds of fluoride multilayers at 355 nm

    SciTech Connect (OSTI)

    Chow, R.; Kozlowski, M.R.; Loomis, G.E.; Rainer, F.

    1992-10-01T23:59:59.000Z

    Fluoride multilayer coatings were evaluated for use in 355 nm high reflector applications. The LaF[sub 3]/Na[sub 3]AlF[sub 6], NdF[sub 3]/Na[sub 3]AlF[sub 6] and GdF[sub 3]/Na[sub 3]AlF[sub 6] multilayers had laser damage thresholds of 20, 17.9 and 7.4 (measured at 10-ns pulsewidths), respectively. High tensile stresses in the coatings restricted this evaluation to only 5-layer-pair partial reflectors (49--52%).The LaF[sub 3]/Na[sub 3]AlF[sub 6], NdF[sub 3]/Na[sub 3]Al[sub 6] and GdF[sub 3]/Na[sub 3]AlF[sub 6] multilayers had tensile stresses of [approximately] 1.1 [times] 109, 1.3 [times] 109 and 9.3 [times] 10[sup 8] dynes/cm[sup 2], respectively. Substrate material and glow-discharge processing of the substrates were found to influence the density of stress-induced coating fractures and damage thresholds in some cases. If stress fracturing and scatter can be controlled, these fluoride material combinations are suited for 3[omega] applications.

  15. Fabrication of 10nm diameter carbon nanopores

    SciTech Connect (OSTI)

    Radenovic, Aleksandra; Trepagnier, Eliane; Csencsits, Roseann; Downing, Kenneth H; Liphardt, Jan

    2008-09-25T23:59:59.000Z

    The addition of carbon to samples, during imaging, presents a barrier to accurate TEM analysis, the controlled deposition of hydrocarbons by a focused electron beam can be a useful technique for local nanometer-scale sculpting of material. Here we use hydrocarbon deposition to form nanopores from larger focused ion beam (FIB) holes in silicon nitride membranes. Using this method, we close 100-200nm diameter holes to diameters of 10nm and below, with deposition rates of 0.6nm per minute. I-V characteristics of electrolytic flow through these nanopores agree quantitatively with a one dimensional model at all examined salt concentrations.

  16. InGaAs/InP DHBTs WITH A 75nm COLLECTOR, 20nm BASE DEMONSTRATING 544 GHz f , BVCEO = 3.2V, and BVCBO = 3.4V

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    InGaAs/InP DHBTs WITH A 75nm COLLECTOR, 20nm BASE DEMONSTRATING 544 GHz f , BVCEO = 3.2V, and BVCBOGaAs base and a 75 nm InP collector containing an InGaAs/InAlAs superlattice grade. These devices exhibit collector thickness for any HBT. The devices have been scaled vertically for reduced base and collector

  17. Power and Performance of Native and Java Benchmarks on 130nm to 32nm Process Technologies

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Power and Performance of Native and Java Benchmarks on 130nm to 32nm Process Technologies Hadi with chip power reduc- tions. This paper examines how well process technology and mi- croarchitecture delivered on this assumption. This paper evalu- ates power and performance of native and Java workloads

  18. Hydrocarbon-free resonance transition 795 nm rubidium laser

    E-Print Network [OSTI]

    Wu, Sheldon Shao Quan

    2009-01-01T23:59:59.000Z

    transition 795-nm rubidium laser," Opt. Lett. 32, 2423- S.transition 795- nm rubidium laser using 3 He buffer gas",transition 795-nm Rubidium laser with He buffer gas" (

  19. 28-nm laser damage testing of LIF

    SciTech Connect (OSTI)

    Foltyn, S.R.; Newman, B.E.

    1981-01-01T23:59:59.000Z

    We have tested several samples of LIF, both single crystal and press forged, for damage resistance to 10-ns 248-nm pulses at 35 pps. The damage thresholds - the highest levels at which no damage could be produced - ranged from 4 to 6 J/cm/sup 2/ although some test sites survived irradiation at approx. 30 J/cm/sup 2/. We observed that bulk damage is the primary failure mechanism in single crystal and press forged samples and that both types exhibit the same resistance to laser damage.

  20. Photodissociation of the Propargyl (C3D3) Radicals at 248 nm and 193 nm

    SciTech Connect (OSTI)

    Neumark., D.M.; Crider, P.E.; Castiglioni, L.; Kautzman, K.K.

    2009-01-21T23:59:59.000Z

    The photodissociation of perdeuterated propargyl (D{sub 2}CCCD) and propynyl (D{sub 3}CCC) radicals was investigated using fast beam photofragment translational spectroscopy. Radicals were produced from their respective anions by photodetachment at 540 nm and 450 nm (below and above the electron affinity of propynyl). The radicals were then photodissociated by 248 nm or 193 nm light. The recoiling photofragments were detected in coincidence with a time- and position-sensitive detector. Three channels were observed: D{sub 2} loss, CD + C{sub 2}D{sub 2}, and CD{sub 3} + C{sub 2}. Obervation of the D loss channel was incompatible with this experiment and was not attempted. Our translational energy distributions for D{sub 2} loss peaked at nonzero translational energy, consistent with ground state dissociation over small (< 1 eV) exit barriers with respect to separated products. Translational energy distributions for the two heavy channels peaked near zero kinetic energy, indicating dissociation on the ground state in the absence of exit barriers.

  1. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    SciTech Connect (OSTI)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece)

    2014-09-15T23:59:59.000Z

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300?nm GaN/ 200?nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8?×?10{sup 12} to 2.1 × 10{sup 13} cm{sup ?2} as the AlN barrier thickness increased from 2.2 to 4.5?nm, while a 4.5?nm AlN barrier would result to 3.1?×?10{sup 13} cm{sup ?2} on a GaN buffer layer. The 3.0?nm AlN barrier structure exhibited the highest 2DEG mobility of 900?cm{sup 2}/Vs for a density of 1.3?×?10{sup 13} cm{sup ?2}. The results were also confirmed by the performance of 1??m gate-length transistors. The scaling of AlN barrier thickness from 1.5?nm to 4.5?nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63?A/mm. The maximum drain-source current was 1.1?A/mm for AlN barrier thickness of 3.0?nm and 3.7?nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0?nm AlN barrier.

  2. The transition from amorphous to crystalline in Al/Zr multilayers

    SciTech Connect (OSTI)

    Zhong Qi; Zhang Zhong; Ma Shuang; Qi Runze; Li Jia; Wang Zhanshan [MOE Key Laboratory of Advanced Micro-Structured Materials, Institute of Precision Optical Engineering, Department of Physics, Tongji University, Shanghai 200092 (China); Le Guen, Karine; Andre, Jean-Michel; Jonnard, Philippe [Laboratoire de Chimie Physique - Matiere et Rayonnement, UPMC Univ. Paris 06, CNRS UMR 7614, 11 rue Pierre et Marie Curie, F-75231 Paris cedex 05 (France)

    2013-04-07T23:59:59.000Z

    The amorphous-to-crystalline transition in Al(1.0%wtSi)/Zr and Al(Pure)/Zr multilayers grown by direct-current magnetron sputtering system has been characterized over a range of Al layer thicknesses (1.0-5.0 nm) by using a series of complementary measurements including grazing incidence X-ray reflectometry, atomic force microscopy, X-ray diffraction, and high-resolution transmission electron microscopy. The Al layer thickness transition exhibits the Si doped in Al could not only disfavor the crystallization of Al but also influence the changing trends of surface roughness and diffraction peak position of phase Al<111>. An interesting feature of the presence of Si in Al layer is that Si could influence the transition process in Al(1%wtSi) layer, in which the critical thickness (1.6 nm) of Al(Pure) layer in Al(Pure)/Zr shifts to 1.8 nm of Al(1.0%wtSi) layer in Al(1.0%wtSi)/Zr multilayer. We also found that the Zr-on-Al interlayer is wider than the Al-on-Zr interlayer in both systems, and the Al layers do not have specific crystal orientation in the directions vertical to the layer from selected area electron diffraction patterns below the thickness (3.0 nm) of Al layers. Above the thickness (3.0 nm) of Al layers, the Al layers are highly oriented in Al<111>, so that the transformation from asymmetrical to symmetrical interlayers can be observed. Based on the analysis of all measurements, we build up a model with four steps, which could explain the Al layer thickness transition process in terms of a critical thickness for the nucleation of Al(Pure) and Al(1%wtSi) crystallites.

  3. ALS Spectrum

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  4. Reviw Al

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  5. ALS Spectrum

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  6. ALS Visitors

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  7. AL. I

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  8. June 15, 2004 / Vol. 29, No. 12 / OPTICS LETTERS 1357 Highly coherent light at 13 nm generated by use of

    E-Print Network [OSTI]

    Bartels, Randy

    , and in developing new types of nano- probe. However, many EUV sources, such as synchrotrons and undulators1 and high Bartels et al. demonstrated that EUV light produced by HHG in gas-filled hollow waveguides exhibits full spatial coherence at wavelengths around 30 nm.3 The extended propagation length in the hollow

  9. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

    SciTech Connect (OSTI)

    Guo, Wei, E-mail: wguo2@ncsu.edu; Bryan, Zachary; Kirste, Ronny; Bryan, Isaac; Hussey, Lindsay; Bobea, Milena; Haidet, Brian; Collazo, Ramón; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Xie, Jinqiao; Mita, Seiji [HexaTech, Inc., 991 Aviation Pkwy, Suite 800, Morrisville, North Carolina 27560 (United States); Gerhold, Michael [Engineering Science Directorate, Army Research Office, P.O. BOX 12211, Research Triangle Park, North Carolina 27703 (United States)

    2014-03-14T23:59:59.000Z

    Optical gain spectra for ?250?nm stimulated emission were compared in three different AlGaN-based structures grown on single crystalline AlN substrates: a single AlGaN film, a double heterostructure (DH), and a Multiple Quantum Well (MQW) structure; respective threshold pumping power densities of 700, 250, and 150?kW/cm{sup 2} were observed. Above threshold, the emission was transverse-electric polarized and as narrow as 1.8?nm without a cavity. The DH and MQW structures showed gain values of 50–60?cm{sup ?1} when pumped at 1?MW/cm{sup 2}. The results demonstrated the excellent optical quality of the AlGaN-based heterostructures grown on AlN substrates and their potential for realizing electrically pumped sub-280?nm laser diodes.

  10. Microsoft PowerPoint - WAPA Transmission Developments in NM ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NM, CO, WY, KS, ND, UT, SD & ID Tasked with planning and financing of transmission lines within their respective states RETA has the additional requirement that 30% of...

  11. Generation and use of high power 213 nm and 266 nm laser radiation and tunable 210-400 nm laser radiation with BBO crystal matrix array

    DOE Patents [OSTI]

    Gruen, Dieter M. (Downers Grove, IL)

    2000-01-01T23:59:59.000Z

    A 213 nm laser beam is capable of single photon ablative photodecomposition for the removal of a polymer or biological material substrate. Breaking the molecular bonds and displacing the molecules away from the substrate in a very short time period results in most of the laser photon energy being carried away by the displaced molecules, thus minimizing thermal damage to the substrate. The incident laser beam may be unfocussed and is preferably produced by quintupling the 1064 nm radiation from a Nd:YAG solid state laser, i.e., at 213 nm. In one application, the 213 nm laser beam is expanded in cross section and directed through a plurality of small beta barium borate (BBO) crystals for increasing the energy per photon of the laser radiation directed onto the substrate. The BBO crystals are arranged in a crystal matrix array to provide a large laser beam transmission area capable of accommodating high energy laser radiation without damaging the BBO crystals. The BBO crystal matrix array may also be used with 266 nm laser radiation for carrying out single or multi photon ablative photodecomposition. The BBO crystal matrix array may also be used in an optical parametric oscillator mode to generate high power tunable laser radiation in the range of 210-400 nm.

  12. Local stress-induced effects on AlGaAs/AlOx oxidation front shape

    SciTech Connect (OSTI)

    Chouchane, F.; Almuneau, G., E-mail: almuneau@laas.fr; Arnoult, A.; Lacoste, G.; Fontaine, C. [CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse (France); Univ de Toulouse, UPS, LAAS, F-31400 Toulouse (France); Cherkashin, N. [Univ de Toulouse, UPS, LAAS, F-31400 Toulouse (France); CNRS, CEMES, 29 Rue Jeanne Marvig, 31055 Toulouse Cedex 4 (France)

    2014-07-28T23:59:59.000Z

    The lateral oxidation of thick AlGaAs layers (>500?nm) is studied. An uncommon shape of the oxide tip is evidenced and attributed to the embedded stress distribution, inherent to the oxidation reaction. Experimental and numerical studies of the internal strain in oxidized Al{sub x}Ga{sub 1?x}As/GaAs structures were carried out by dark-field electron holography and finite element methods. A mapping of the strain distribution around the AlGaAs/oxide interface demonstrates the main role of internal stress on the shaping of the oxide front. These results demonstrate the high relevance of strain in oxide-confined III-V devices, in particular, with over-500-nm thick AlOx confinement layers.

  13. RF power potential of 45 nm CMOS technology

    E-Print Network [OSTI]

    Putnam, Christopher

    This paper presents the first measurements of the RF power performance of 45 nm CMOS devices with varying device widths and layouts. We find that 45 nm CMOS can deliver a peak output power density of around 140 mW/mm with ...

  14. New Materials for 157 nm Photoresists: Characterization and Properties

    E-Print Network [OSTI]

    Rollins, Andrew M.

    . The current Semiconductor Industry Association (SIA) Roadmap indicates the 100 nm technology node will be reached by 2005; however, many semiconductor manufacturers foresee the need for a technology enabling 100 by 2005. Therefore, 157 nm lithography is viewed as a potential bridge across the gap between optical

  15. Photoelectron Spectroscopy of Anions at 118.2 nm: Observation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    coherent vacuum ultraviolet radiation at 118.2 nm (10.488 eV) by tripling the third harmonic output (355 nm) of a Nd:YAG laser in a XeAr cell. Our study focuses on a set of...

  16. Free carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1

    E-Print Network [OSTI]

    As, Donat Josef

    ) substrate,7 with GaN and AlGaN layer thickness of 600 nm and 30 nm, respectively. The layer thicknessFree carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1 T. Li,1 J. Y. Huang,1 F. A (Received 24 February 2012; accepted 19 March 2012; published online 3 April 2012) Cubic Al0.3Ga0.7N/GaN

  17. Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] Passivation

    E-Print Network [OSTI]

    Guo, Shiping

    We studied submicrometer (L[subscript G] = 0.15-0.25 à ¿m) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al[subscript 2]O[subscript 3] passivation. The combination of ...

  18. Corrosion-resistant multilayer coatings for the 28-75 nm wavelength region

    SciTech Connect (OSTI)

    Soufli, R; Fernandez-Perea, M; Al, E T

    2011-11-08T23:59:59.000Z

    Corrosion has prevented use of SiC/Mg multilayers in applications requiring good lifetime stability. We have developed Al-based barrier layers that dramatically reduce corrosion, while preserving high reflectance and low stress. The aforementioned advances may enable the implementation of corrosion-resistant, high-performance SiC/Mg coatings in the 28-75 nm region in applications such as tabletop EUV/soft x-ray laser sources and solar physics telescopes. Further study and optimization of corrosion barrier structures and coating designs is underway.

  19. Hydrocarbon-free resonance transition 795 nm rubidium laser

    E-Print Network [OSTI]

    Wu, Sheldon Shao Quan

    2009-01-01T23:59:59.000Z

    and R. J. Beach, "Hydrocarbon-free resonance transition 795-a Reliable Diode-Pumped Hydrocarbon-Free 795-nm Rubidiumand R. J. Beach, "Hydrocarbon-free resonance transition 795-

  20. albuquerque nm 1st: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    20 21 22 23 24 25 Next Page Last Page Topic Index 1 Proceedings of the American Solar Energy Society 98 Conference Albuquerque, NM (June 1998) Multidisciplinary Databases and...

  1. Life-Cycle Energy Demand of Computational Logic: From High-Performance 32nm CPU to Ultra-Low-Power 130nm MCU

    E-Print Network [OSTI]

    Bol, David; Boyd, Sarah; Dornfeld, David

    2011-01-01T23:59:59.000Z

    Performance 32 nm CPU to Ultra-Low-Power 130 nm MCU Davidboxes and smart phones to ultra-low-power 130 nm MCUs forthe energy demand for ultra-low-power MCUs is completely

  2. Life-Cycle Energy Demand of Computational Logic: From High-Performance 32nm CPU to Ultra-Low-Power 130nm MCU

    E-Print Network [OSTI]

    Bol, David; Boyd, Sarah; Dornfeld, David

    2011-01-01T23:59:59.000Z

    Performance 32 nm CPU to Ultra-Low-Power 130 nm MCU Davidboxes and smart phones to ultra-low-power 130 nm MCUs forthe energy demand for ultra-low-power MCUs is completely

  3. 60nm collector InGaAs/InP Type-I DHBTs demonstrating 660 GHz f , BVCEO = 2.5V, and BVCBO = 2.7V

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    60nm collector InGaAs/InP Type-I DHBTs demonstrating 660 GHz f , BVCEO = 2.5V, and BVCBO = 2.7VGaAs base and a 60 nm InP collector containing an InGaAs/InAlAs superlattice grade. Devices employing a 400. The devices have been scaled vertically for reduced base and collector electron transit times, and the base-collector

  4. Ultraviolet photoluminescence from Gd-implanted AlN epilayers

    SciTech Connect (OSTI)

    Zavada, J. M.; Nepal, N.; Lin, J. Y.; Jiang, H. X.; Brown, E.; Hoemmerich, U.; Hite, J.; Thaler, G. T.; Abernathy, C. R.; Pearton, S. J.; Gwilliam, R. [U.S. Army Research Office, Durham, North Carolina 27709 (United States); Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Department of Physics, Hampton University, Hampton, Virginia 23668 (United States); Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Surrey Ion Beam Center, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)

    2006-10-09T23:59:59.000Z

    Deep ultraviolet emission from gadolinium (Gd)-implanted AlN thin films has been observed using photoluminescence (PL) spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of {approx}6x10{sup 14} cm{sup -2}. Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.

  5. Broadband superluminescent diodes with bell-shaped spectra emitting in the range from 800 to 900 nm

    SciTech Connect (OSTI)

    Andreeva, E V; Il'ichenko, S N; Kostin, Yu O; Lapin, P I [Superlum Diodes Ltd., Moscow (Russian Federation); Ladugin, M A; Marmalyuk, A A [Open Joint-Stock Company 'M.F. Stel'makh Polyus Research and Development Institute', Moscow (Russian Federation); Yakubovich, S D [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)

    2013-08-31T23:59:59.000Z

    Quantum-well superluminescent diodes (SLD) with extremely thin active (AlGa)As and (InGa)As layers and centre wavelengths about 810, 840, 860 and 880 nm are experimentally studied. Their emission spectrum possesses the shape close to Gaussian, its FWHM being 30 – 60 nm depending on the length of the active channel and the level of pumping. Under cw injection, the output power of light-emitting modules based on such SLDs can amount to 1.0 – 25 mW at the output of a single-mode fibre. It is demonstrated that the operation lifetime of these devices exceeds 30000 hours. Based on the light-emitting modules the prototypes of combined BroadLighter series light sources are implemented having a bell-shaped spectrum with the width up to 100 nm. (optical radiation sources)

  6. Single-frequency 1559-nm erbium-doped fiber laser pumped by a 650-nm semiconductor laser

    SciTech Connect (OSTI)

    Giles, C. Randy [Lucent Technologies, Bell Laboratories, Crawford Hill Laboratory, Holmdel, New Jersey 07733-0400 (United States)] Mizrahi, V. [Cienna Corporation, Hanover, Maryland 21076 (United States)

    1997-08-01T23:59:59.000Z

    A single-frequency laser with a 2-cm-length erbium-doped fiber and fiber-grating coupler mirrors was operated successfully with a 650-nm semiconductor pump laser. Laser pump threshold was 0.91-mW and 34-{mu}W output power at 1559 nm was obtained for 6-mW pump power. {copyright} 1997 Optical Society of America

  7. A cesium bromide photocathode excited by 405?nm radiation

    SciTech Connect (OSTI)

    Maldonado, J. R.; Cheng, Y. T.; Pease, Fabian W.; Hesselink, L. [Electrical Engineering Department, Stanford University, Stanford, California 94305 (United States); Pianetta, P. [SLAC National Accelerator Center, Menlo Park, CA 94025 (United States)

    2014-07-14T23:59:59.000Z

    In several applications, such as electron beam lithography and X-ray differential phase contrast imaging, there is a need for a free electron source with a current density at least 10?A/cm{sup 2} yet can be shaped with a resolution down to 20?nm and pulsed. Additional requirements are that the source must operate in a practical demountable vacuum (>1e-9?Torr) and be reasonably compact. In prior work, a photocathode comprising a film of CsBr on metal film on a sapphire substrate met the requirements except it was bulky because it required a beam (>10?W/cm{sup 2}) of 257?nm radiation. Here, we describe an approach using a 405?nm laser which is far less bulky. The 405?nm laser, however, is not energetic enough to create color centers in CsBr films. The key to our approach is to bombard the CsBr film with a flood beam of about 1?keV electrons prior to operation. Photoelectron efficiencies in the range of 100–1000?nA/mW were demonstrated with lifetimes exceeding 50?h between electron bombardments. We suspect that the electron bombardment creates intraband color centers whence electrons can be excited by the 405?nm photons into the conduction band and thence into the vacuum.

  8. Ca II 854.2 nm BISECTORS AND CIRCUMFACULAR REGIONS

    SciTech Connect (OSTI)

    Pietarila, A.; Harvey, J. W. [National Solar Observatory, 950 N. Cherry Avenue, Tucson, AZ 85719 (United States)] [National Solar Observatory, 950 N. Cherry Avenue, Tucson, AZ 85719 (United States)

    2013-02-20T23:59:59.000Z

    Active regions appear bright in Ca II 854.2 nm line core intensity while the surrounding areas, referred to as circumfacular regions, are darker than the active region or the quiet Sun. We use Synoptic Optical Long-term Investigations of the Sun Vector Spectromagnetograph Ca II 854.2 nm data (photospheric and chromospheric full disk magnetograms as well as high spectral resolution Stokes I and V profiles) to study the connection between magnetic canopies, circumfacular regions, and Ca II 854.2 nm bisector amplitudes (spans). The line bisector amplitude is reduced in circumfacular regions, where the 3 minute period power in chromospheric H{alpha} intensity oscillations is also reduced relative to the surrounding quiet Sun. The latter is consistent with magnetic canopies in circumfacular regions suppressing upward propagating steepening acoustic waves. Our results provide further strong evidence for shock waves as the cause of the inverse C-shaped bisector and explain the observed solar cycle variation of the shape and amplitude of Sun-as-a-star Ca II 854.2 nm bisectors.

  9. 32nd Conf. Radar Meteorology Albuquerque, NM, 2005

    E-Print Network [OSTI]

    Xue, Ming

    32nd Conf. Radar Meteorology Albuquerque, NM, 2005 J1J.4 MULTIPLE DOPPLER WIND ANALYSIS and smoothness constraints by incorporating them into a cost function yielding the 3-D wind. In this study, this 3DVAR analysis method is adapted to perform multiple Doppler wind analysis for CASA radars, together

  10. Fabrication of 10 nm enclosed nanofluidic channels and Zhaoning Yu

    E-Print Network [OSTI]

    Fabrication of 10 nm enclosed nanofluidic channels Han Caoa) and Zhaoning Yu Nanostructure wafers . The nanofluidic channels were further narrowed and sealed by techniques that are based- tremely small nanofluidic structures need to be fabricated and used as matrices for the manipulation

  11. NM Junior College CATALOG YEAR 2009-Transferring from New Mexico

    E-Print Network [OSTI]

    New Mexico, University of

    2010 NM Junior College CATALOG YEAR 2009- 2010 11/9/2010 Transferring from New Mexico Junior College to the University of New Mexico #12;NMJC Course UNM Equivalent Important UNM Phone Numbers................................................................................................... http://advisement.unm.edu/ The University of New Mexico and New Mexico Junior College work closely

  12. Final report on LDRD project : single-photon-sensitive imaging detector arrays at 1600 nm.

    SciTech Connect (OSTI)

    Childs, Kenton David; Serkland, Darwin Keith; Geib, Kent Martin; Hawkins, Samuel D.; Carroll, Malcolm S.; Klem, John Frederick; Sheng, Josephine Juin-Jye; Patel, Rupal K.; Bolles, Desta; Bauer, Tom M.; Koudelka, Robert

    2006-11-01T23:59:59.000Z

    The key need that this project has addressed is a short-wave infrared light detector for ranging (LIDAR) imaging at temperatures greater than 100K, as desired by nonproliferation and work for other customers. Several novel device structures to improve avalanche photodiodes (APDs) were fabricated to achieve the desired APD performance. A primary challenge to achieving high sensitivity APDs at 1550 nm is that the small band-gap materials (e.g., InGaAs or Ge) necessary to detect low-energy photons exhibit higher dark counts and higher multiplication noise compared to materials like silicon. To overcome these historical problems APDs were designed and fabricated using separate absorption and multiplication (SAM) regions. The absorption regions used (InGaAs or Ge) to leverage these materials 1550 nm sensitivity. Geiger mode detection was chosen to circumvent gain noise issues in the III-V and Ge multiplication regions, while a novel Ge/Si device was built to examine the utility of transferring photoelectrons in a silicon multiplication region. Silicon is known to have very good analog and GM multiplication properties. The proposed devices represented a high-risk for high-reward approach. Therefore one primary goal of this work was to experimentally resolve uncertainty about the novel APD structures. This work specifically examined three different designs. An InGaAs/InAlAs Geiger mode (GM) structure was proposed for the superior multiplication properties of the InAlAs. The hypothesis to be tested in this structure was whether InAlAs really presented an advantage in GM. A Ge/Si SAM was proposed representing the best possible multiplication material (i.e., silicon), however, significant uncertainty existed about both the Ge material quality and the ability to transfer photoelectrons across the Ge/Si interface. Finally a third pure germanium GM structure was proposed because bulk germanium has been reported to have better dark count properties. However, significant uncertainty existed about the quantum efficiency at 1550 nm the necessary operating temperature. This project has resulted in several conclusions after fabrication and measurement of the proposed structures. We have successfully demonstrated the Ge/Si proof-of-concept in producing high analog gain in a silicon region while absorbing in a Ge region. This has included significant Ge processing infrastructure development at Sandia. However, sensitivity is limited at low temperatures due to high dark currents that we ascribe to tunneling. This leaves remaining uncertainty about whether this structure can achieve the desired performance with further development. GM detection in InGaAs/InAlAs, Ge/Si, Si and pure Ge devices fabricated at Sandia was shown to overcome gain noise challenges, which represents critical learning that will enable Sandia to respond to future single photon detection needs. However, challenges to the operation of these devices in GM remain. The InAlAs multiplication region was not found to be significantly superior to current InP regions for GM, however, improved multiplication region design of InGaAs/InP APDs has been highlighted. For Ge GM detectors it still remains unclear whether an optimal trade-off of parameters can achieve the necessary sensitivity at 1550 nm. To further examine these remaining questions, as well as other application spaces for these technologies, funding for an Intelligence Community post-doc was awarded this year.

  13. Fabrication of Sub-10-nm Silicon Nanowire Arrays by Size Reduction Lithography Yang-Kyu Choi, Ji Zhu,, Jeff Grunes,, Jeffrey Bokor, and Gabor. A. Somorjai*,,

    E-Print Network [OSTI]

    Bokor, Jeffrey

    systems. Introduction The fabrication of nanoscale patterns with dimensions of 10 nm or less has been and space dimensions" from polysilicon (polycrystalline silicon) and a metal oxide by etching one et al. carried out what they called "spacer lithography" to produce electronic devices in silicon

  14. Ion transport in sub-5-nm graphene nanopores

    SciTech Connect (OSTI)

    Suk, Myung E.; Aluru, N. R., E-mail: aluru@illinois.edu [Department of Mechanical Science and Engineering, Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

    2014-02-28T23:59:59.000Z

    Graphene nanopore is a promising device for single molecule sensing, including DNA bases, as its single atom thickness provides high spatial resolution. To attain high sensitivity, the size of the molecule should be comparable to the pore diameter. However, when the pore diameter approaches the size of the molecule, ion properties and dynamics may deviate from the bulk values and continuum analysis may not be accurate. In this paper, we investigate the static and dynamic properties of ions with and without an external voltage drop in sub-5-nm graphene nanopores using molecular dynamics simulations. Ion concentration in graphene nanopores sharply drops from the bulk concentration when the pore radius is smaller than 0.9 nm. Ion mobility in the pore is also smaller than bulk ion mobility due to the layered liquid structure in the pore-axial direction. Our results show that a continuum analysis can be appropriate when the pore radius is larger than 0.9 nm if pore conductivity is properly defined. Since many applications of graphene nanopores, such as DNA and protein sensing, involve ion transport, the results presented here will be useful not only in understanding the behavior of ion transport but also in designing bio-molecular sensors.

  15. Optically pumped cerium-doped LiSrAlF{sub 6} and LiCaAlF{sub 6}

    DOE Patents [OSTI]

    Marshall, C.D.; Payne, S.A.; Krupke, W.F.

    1996-05-14T23:59:59.000Z

    Ce{sup 3+}-doped LiSrAlF{sub 6} crystals are pumped by ultraviolet light which is polarized along the c axis of the crystals to effectively energize the laser system. In one embodiment, the polarized fourth harmonic light output from a conventional Nd:YAG laser operating at 266 nm is arranged to pump Ce:LiSrAlF{sub 6} with the pump light polarized along the c axis of the crystal. The Ce:LiSrAlF{sub 6} crystal may be placed in a laser cavity for generating tunable coherent ultraviolet radiation in the range of 280-320 nm. Additionally, Ce-doped crystals possessing the LiSrAlF{sub 6} type of chemical formula, e.g. Ce-doped LiCaAlF{sub 6} and LiSrGaF{sub 6}, can be used. Alternative pump sources include an ultraviolet-capable krypton or argon laser, or ultraviolet emitting flashlamps. The polarization of the pump light will impact operation. The laser system will operate efficiently when light in the 280-320 nm gain region is injected or recirculated in the system such that the beam is also polarized along the c axis of the crystal. The Ce:LiSrAlF{sub 6} laser system can be configured to generate ultrashort pulses, and it may be used to pump other devices, such as an optical parametric oscillator. 10 figs.

  16. Optically pumped cerium-doped LiSrAlF.sub.6 and LiCaAlF.sub.6

    DOE Patents [OSTI]

    Marshall, Christopher D. (Livermore, CA); Payne, Stephen A. (Castro Valley, CA); Krupke, William F. (Pleasanton, CA)

    1996-01-01T23:59:59.000Z

    Ce.sup.3+ -doped LiSrAlF.sub.6 crystals are pumped by ultraviolet light which is polarized along the c axis of the crystals to effectively energize the laser system. In one embodiment, the polarized fourth harmonic light output from a conventional Nd:YAG laser operating at 266 nm is arranged to pump Ce:LiSrAlF.sub.6 with the pump light polarized along the c axis of the crystal. The Ce:LiSrAlF.sub.6 crystal may be placed in a laser cavity for generating tunable coherent ultraviolet radiation in the range of 280-320 nm. Additionally, Ce-doped crystals possessing the LiSrAlF.sub.6 type of chemical formula, e.g. Ce-doped LiCaAlF.sub.6 and LiSrGaF.sub.6, can be used. Alternative pump sources include an ultraviolet-capable krypton or argon laser, or ultraviolet emitting flashlamps. The polarization of the pump light will impact operation. The laser system will operate efficiently when light in the 280-320 nm gain region is injected or recirculated in the system such that the beam is also polarized along the c axis of the crystal. The Ce:LiSrAlF.sub.6 laser system can be configured to generate ultrashort pulses, and it may be used to pump other devices, such as an optical parametric oscillator.

  17. Sub-30 nm InAs Quantum-Well MOSFETs with Self-aligned Metal Contacts and Sub-1 nm EOT HfO2 Insulator

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    performance, ability to harmoniously scale down to sub-30 nm gate length dimensions and CMOS. MOSFETs with gate length dimensions in the 20-30 nm range and outstanding electrical characteristics that yields an undercut spacer is etched through highly

  18. Intermetallic compound formation at Cu-Al wire bond interface

    SciTech Connect (OSTI)

    Bae, In-Tae; Young Jung, Dae [Small Scale Systems Integration and Packaging Center, State University of New York at Binghamton, Binghamton, New York 13902 (United States); Chen, William T.; Du Yong [Advanced Semiconductor Engineering Inc., 1255 E Arques Ave, Sunnyvale, California 94085 (United States)

    2012-12-15T23:59:59.000Z

    Intermetallic compound (IMC) formation and evolution at Cu-Al wire bond interface were studied using focused ion beam /scanning electron microscopy, transmission electron microscopy (TEM)/energy dispersive x-ray spectroscopy (EDS), nano beam electron diffraction (NBED) and structure factor (SF) calculation. It was found that discrete IMC patches were formed at the Cu/Al interface in as-packaged state and they grew toward Al pad after high temperature storage (HTS) environment at 150 Degree-Sign C. TEM/EDS and NBED results combined with SF calculation revealed the evidence of metastable {theta} Prime -CuAl{sub 2} IMC phase (tetragonal, space group: I4m2, a = 0.404 nm, c= 0.580 nm) formed at Cu/Al interfaces in both of the as-packaged and the post-HTS samples. Two feasible mechanisms for the formation of the metastable {theta} Prime -CuAl{sub 2} phase are discussed based on (1) non-equilibrium cooling of wire bond that is attributed to highly short bonding process time and (2) the epitaxial relationships between Cu and {theta} Prime -CuAl{sub 2}, which can minimize lattice mismatch for {theta} Prime -CuAl{sub 2} to grow on Cu.

  19. Electrical and dielectric properties of polyanilineAl2O3 nanocomposites derived from various Al2O3 nanostructures

    E-Print Network [OSTI]

    Guo, John Zhanhu

    storage devices.10 Nanomaterials are one kind of materials that have sizes smaller than 100 nm in at least nanostructures Jiahua Zhu,a Suying Wei,b Lei Zhang,a Yuanbing Mao,c Jongeun Ryu,d Neel Haldolaarachchige,e David03908j Four Al2O3 nanostructures (i.e. nanofiber, nanoplatelet, nanorod and nanoflake) have been

  20. Suppression of high-order-harmonic intensities observed in aligned CO{sub 2} molecules with 1300-nm and 800-nm pulses

    SciTech Connect (OSTI)

    Kato, Kosaku; Minemoto, Shinichirou; Sakai, Hirofumi [Department of Physics, Graduate School of Science, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

    2011-08-15T23:59:59.000Z

    High-order-harmonic generation from aligned N{sub 2}, O{sub 2}, and CO{sub 2} molecules is investigated by 1300-nm and 800-nm pulses. The harmonic intensities of 1300-nm pulses from aligned molecules show harmonic photon energy dependence similar to those of 800-nm pulses. Suppression of harmonic intensity from aligned CO{sub 2} molecules is observed for both 1300- and 800-nm pulses over the same harmonic photon energy range. As the dominant mechanism for the harmonic intensity suppression from aligned CO{sub 2} molecules, the present results support the two-center interference picture rather than the dynamical interference picture.

  1. RAPID/Roadmap/3-NM-f | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-f < RAPID‎ | Roadmap Jump to: navigation, searche <c <c <NM-f

  2. RAPID/Roadmap/3-NM-g | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-f < RAPID‎ | Roadmap Jump to: navigation, searche <c <c <NM-fg

  3. NM Underground Storage Tank Registration | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer PlantMunhall, Pennsylvania: Energy Resources JumpNEF Advisors LLC JumpNF- Review ofNM

  4. RAPID/Roadmap/12-NM-a | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformation TexasTexas)ID-a < RAPID‎ | RoadmapNM-a

  5. RAPID/Roadmap/18-NM-b | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformatione < RAPID‎ | RoadmapHI-a <caacNM-b

  6. RAPID/Roadmap/19-NM-a | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I GeothermalPotentialBiopowerSolidGenerationMethodInformatione < RAPID‎ | RoadmapHI-acCA-bfID-aNM-a

  7. RAPID/Roadmap/19-NM-c | Open Energy Information

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  8. GeoLectric Power Company NM LLC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdf Jump1946865°,Park, Texas:Webinars/PuestaGenevaGeoLectric Power Company NM LLC

  9. Photofragment Translational Spectroscopy of Propargyl Radicals at 248 nm

    SciTech Connect (OSTI)

    Goncher, S.J.; Moore, D.T.; Sveum, N.E.; Neumark, D.M.

    2007-12-21T23:59:59.000Z

    The photodissociation of propargyl radical, C{sub 3}H{sub 3}, and its perdeuterated isotopolog was investigated using photofragment translational spectroscopy. Propargyl radicals were produced by 193 nm photolysis of allene entrained in a molecular beam expansion, and then photodissociated at 248 nm. photofragment time-of-flight spectra were measured at a series of laboratory angles using electron impact ionization coupled to a mass spectrometer. Data for ion masses corresponding to C{sub 3}H{sub 2}{sup +}, C{sub 3}H{sup +}, C{sub 3}{sup +}, and the analogous deuterated species show that both H and H{sub 2} loss occur. The translational energy distributions for these processes have average values = 5.7 and 15.9 kcal/mol, respectively, and are consistent with dissociation on the ground state following internal conversion, with no exit barrier for H loss but a tight transition state for H{sub 2} loss. The translational energy distribution for H atom loss is similar to that in previous work on propargyl in which the H atom, rather than the heavy fragment, was detected. The branching ratio for H loss/H{sub 2} loss was determined to be 97.6/2.4 {+-} 1.2, in good agreement with RRKM results.

  10. The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

    SciTech Connect (OSTI)

    Lv, Yuanjie; Feng, Zhihong, E-mail: ga917vv@163.com; Gu, Guodong; Han, Tingting; Yin, Jiayun; Liu, Bo; Cai, Shujun [National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China); Lin, Zhaojun; Ji, Ziwu; Zhao, Jingtao [School of Physics, Shandong University, Jinan 250100 (China)

    2014-07-14T23:59:59.000Z

    The electron mobility scattering mechanisms in AlN/GaN heterostuctures with 3?nm and 6?nm AlN barrier thicknesses were investigated by temperature-dependent Hall measurements. The effect of interface roughness (IFR) scattering on the electron mobility was found to be enhanced by increasing AlN barrier thickness. Moreover, using the measured capacitance-voltage and current-voltage characteristics of the fabricated heterostructure field-effect transistors (HFETs) with different Schottky areas on the two heterostuctures, the variations of electron mobility with different gate biases were investigated. Due to enhanced IFR scattering, the influence of polarization Coulomb field (PCF) scattering on electron mobility was found to decrease with increasing AlN barrier layer thickness. However, the PCF scattering remained an important scattering mechanism in the AlN/GaN HFETs.

  11. Pollution Prevention Opportunity Assessment for the SNL/NM cafeterias.

    SciTech Connect (OSTI)

    McCord, Samuel Adam

    2005-12-01T23:59:59.000Z

    This Pollution Prevention Opportunity Assessment (PPOA) was conducted for the two Sandia National Laboratories/New Mexico cafeteria facilities between May and August 2005. The primary purpose of this PPOA is to assess waste and resource reduction opportunities and issue Pollution Prevention (P2) recommendations for Sandia's food service facilities. This PPOA contains recommendations for energy, water and resource reduction, as well as material substitution based upon environmentally preferable purchasing. Division 3000 has requested the PPOA report as part of the Division's compliance effort to implement the Environmental Management System (EMS) per DOE Order 450.1. This report contains a summary of the information collected and analyses performed with recommended options for implementation. The SNL/NM P2 Group will work with Division 3000 and the respective cafeteria facilities to implement these options.

  12. High power terahertz generation using 1550?nm plasmonic photomixers

    SciTech Connect (OSTI)

    Berry, Christopher W. [Electrical Engineering and Computer Science Department, University of Michigan, Ann Arbor, Michigan 48109 (United States); Hashemi, Mohammad R.; Jarrahi, Mona [Electrical Engineering and Computer Science Department, University of Michigan, Ann Arbor, Michigan 48109 (United States); Electrical Engineering Department, University of California Los Angeles, Los Angeles, California 90095 (United States); Preu, Sascha [Department of Electrical Engineering and Information Technology, Technical University Darmstadt, D-64283 Darmstadt (Germany); Lu, Hong; Gossard, Arthur C. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-07-07T23:59:59.000Z

    We present a 1550?nm plasmonic photomixer operating under pumping duty cycles below 10%, which offers significantly higher terahertz radiation power levels compared to previously demonstrated photomixers. The record-high terahertz radiation powers are enabled by enhancing the device quantum efficiency through use of plasmonic contact electrodes, and by mitigating thermal breakdown at high optical pump power levels through use of a low duty cycle optical pump. The repetition rate of the optical pump can be specifically selected at a given pump duty cycle to control the spectral linewidth of the generated terahertz radiation. At an average optical pump power of 150 mW with a pump modulation frequency of 1 MHz and pump duty cycle of 2%, we demonstrate up to 0.8 mW radiation power at 1 THz, within each continuous wave radiation cycle.

  13. The photodissociation of oxetane at 193 nm as the reverse of the Paterno-Buchi reaction

    SciTech Connect (OSTI)

    Lee, Shih-Huang [National Synchrotron Radiation Research Center (NSRRC), 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan (China)

    2009-12-14T23:59:59.000Z

    We investigated the photodissociation of oxetane (1,3-trimethylene oxide) at 193.3 nm in a molecular-beam apparatus using photofragment-translational spectroscopy and selective photoionization. We measured time-of-flight (TOF) spectra and angular anisotropy parameters {beta}(t) as a function of flight time of products at m/z=26-30 u utilizing photoionization energies from 9.8 to 14.8 eV. The TOF distributions of the products alter greatly with the employed photon energy, whereas their {beta}(t) distributions are insensitive to the photon energy. Dissociation to H{sub 2}CO+C{sub 2}H{sub 4} is the major channel in the title reaction. Three distinct dissociation paths with branching ratios 0.923:0.058:0.019 are responsible for the three features observed in the distribution of kinetic energy released in the channel H{sub 2}CO+C{sub 2}H{sub 4}. The observation of H{sub 2} and H atoms, {approx}1% in branching, indicates that products H{sub 2}CO and C{sub 2}H{sub 4} spontaneously decompose to only a small extent. Most HCO, C{sub 2}H{sub 3}, and C{sub 2}H{sub 2} ions originate from dissociative photoionization of products H{sub 2}CO and C{sub 2}H{sub 4}. Except atomic H and H{sub 2}, the photoproducts have large angular anisotropies, {beta}{>=}-0.8, which reflects rapid dissociation of oxetane following optical excitation at 193.3 nm. The mechanisms of dissociation of oxetane are addressed. Our results confirm the quantum-chemical calculations of Palmer et al. and provide profound insight into the Paterno-Buchi reaction.

  14. AgriculturAl Development

    E-Print Network [OSTI]

    1 SLU Global AgriculturAl ScienceS for globAl Development -- Slu's contribution #12;2 the mission of the Swedish university of Agricultural Sciences (Slu) is "to develop the understanding, management for global Development (pgu). research capacity building provision of expertise Agricultural Sciences

  15. Compression-induced stacking fault tetrahedra around He bubbles in Al

    SciTech Connect (OSTI)

    Shao, Jian-Li, E-mail: shao-jianli@iapcm.ac.cn; Wang, Pei; He, An-Min [Institute of Applied Physics and Computational Mathematics, Beijing 100094 (China)

    2014-10-28T23:59:59.000Z

    Classic molecular dynamics methods are used to simulate the uniform compression process of the fcc Al containing He bubbles. The formation of stacking fault tetrahedra (SFTs) during the collapse of He bubbles is found, and their dependence on the initial He bubble size (0.6–6?nm in diameter) is presented. Our simulations indicate only elastic deformation in the samples for the He bubble size not more than 2?nm. Instead, increasing the He bubble size, we detect several small SFTs forming on the surface of the He bubble (3?nm), as well as the two intercrossed SFTs around the He bubbles (4–6?nm). All these SFTs are observed to be stable under further compression, though there may appear some SF networks outside the SFTs (5–6?nm). Furthermore, the dynamic analysis on the SFTs shows that the yield pressure keeps a near-linear increase with the initial He bubble pressure, and the potential energy of Al atoms inside the SFTs is lower than outside because of their gliding inwards. In addition, the pressure increments of 2–6?nm He bubbles with strain are less than that of Al, which just provides the opportunity for the He bubble collapse and the SFTs formation. Note that the current work only focuses on the case that the number ratio between He atoms and Al vacancies is 1:1.

  16. New Zone Plate for Soft X-Ray Microscopy at 15-nm Spatial Resolution

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    made with the XM-1's current 25-nm MZP, the new MZP was able to obtain sharp images of lines a mere 15 nm apart-where the older zone plate had seen only a featureless field of...

  17. header for SPIE use Fluoropolymers for 157nm Lithography: Optical Properties from VUV

    E-Print Network [OSTI]

    Rollins, Andrew M.

    new radiation damage mechanisms in previously accepted optical materials. For 157 nm pellicles, newheader for SPIE use Fluoropolymers for 157nm Lithography: Optical Properties from VUV Absorbance With the introduction of 157 nm as the next optical lithography wavelength, the need for new pellicle and photoresist

  18. Microstructure of compositionally modulated InAlAs

    SciTech Connect (OSTI)

    Twesten, R.D.; Millunchick, J.M.; Lee, S.R.; Follstaedt, D.M.; Jones, E.D. [Sandia National Labs., Albuquerque, NM (United States); Ahrenkiel, S.P.; Zhang, Y.; Mascarenhas, A. [National Renewable Energy Lab., Golden, CO (United States)

    1996-12-31T23:59:59.000Z

    The authors have observed spontaneous, lateral composition modulation in tensile InAlAs alloy films grown as short-period superlattices on InP (001). They have analyzed these films using transmission electron microscopy, x-ray reciprocal space mapping, and polarized photoluminescence spectroscopy. They find the growth front is nonplanar, exhibiting {approximately} 2 nm deep cusps aligned with the In-rich regions of the compositionally modulated films. In addition to the measured 15 nm wavelength modulation in the [110] direction, a modulation of 30 nm wavelength is seen in the orthogonal [1{bar 1}0] direction. The photoluminescence from the modulated layer is strongly polarized and red shifted by 0.22 eV.

  19. Optical microcavities and enhanced electroluminescence from electroformed Al-Al{sub 2}O{sub 3}-Ag diodes

    SciTech Connect (OSTI)

    Hickmott, T. W. [Department of Physics, State University of New York at Albany, Albany, New York 12222 (United States)

    2013-12-21T23:59:59.000Z

    Electroluminescence (EL) and electron emission into vacuum (EM) occur when a non-destructive dielectric breakdown of Al-Al{sub 2}O{sub 3}-Ag diodes, electroforming, results in the development of a filamentary region in which current-voltage (I-V) characteristics exhibit voltage-controlled negative resistance. The temperature dependence of I-V curves, EM, and, particularly, EL of Al-Al{sub 2}O{sub 3}-Ag diodes with anodic Al{sub 2}O{sub 3} thicknesses between 12?nm and 30?nm, has been studied. Two filters, a long-pass (LP) filter with transmission of photons with energies less than 3.0?eV and a short-pass (SP) filter with photon transmission between 3.0 and 4.0?eV, have been used to characterize EL. The voltage threshold for EL with the LP filter, V{sub LP}, is ?1.5?V. V{sub LP} is nearly independent of Al{sub 2}O{sub 3} thickness and of temperature and is 0.3–0.6?V less than the threshold voltage for EL for the SP filter, V{sub SP}. EL intensity is primarily between 1.8 and 3.0?eV when the bias voltage, V{sub S} ? 7?V. EL in the thinnest diodes is enhanced compared to EL in thicker diodes. For increasing V{sub S}, for diodes with the smallest Al{sub 2}O{sub 3} thicknesses, there is a maximum EL intensity, L{sub MX}, at a voltage, V{sub LMX}, followed by a decrease to a plateau. L{sub MX} and EL intensity at 4.0?V in the plateau region depend exponentially on Al{sub 2}O{sub 3} thickness. The ratio of L{sub MX} at 295?K for a diode with 12?nm of Al{sub 2}O{sub 3} to L{sub MX} for a diode with 25?nm of Al{sub 2}O{sub 3} is ?140. The ratio of EL intensity with the LP filter to EL intensity with the SP filter, LP/SP, varies between ?3 and ?35; it depends on Al{sub 2}O{sub 3} thickness and V{sub S}. Enhanced EL is attributed to the increase of the spontaneous emission rate of a dipole in a non-resonant optical microcavity. EL photons interact with the Ag and Al films to create surface plasmon polaritons (SPPs) at the metal-Al{sub 2}O{sub 3} interfaces. SPPs generate large electromagnetic fields in the filamentary region of the electroformed Al-Al{sub 2}O{sub 3}-Ag diode, which then acts as an optical microcavity. A model is proposed for electronic processes in electroformed Al-Al{sub 2}O{sub 3}-Ag diodes.

  20. Ion Exclusion by Sub 2-nm Carbon Nanotube Pores

    SciTech Connect (OSTI)

    Fornasiero, F; Park, H G; Holt, J K; Stadermann, M; Grigoropoulos, C P; Noy, A; Bakajin, O

    2008-04-09T23:59:59.000Z

    Carbon nanotubes offer an outstanding platform for studying molecular transport at nanoscale, and have become promising materials for nanofluidics and membrane technology due to their unique combination of physical, chemical, mechanical, and electronic properties. In particular, both simulations and experiments have proved that fluid flow through carbon nanotubes of nanometer size diameter is exceptionally fast compared to what continuum hydrodynamic theories would predict when applied on this length scale, and also, compared to conventional membranes with pores of similar size, such as zeolites. For a variety of applications such as separation technology, molecular sensing, drug delivery, and biomimetics, selectivity is required together with fast flow. In particular, for water desalination, coupling the enhancement of the water flux with selective ion transport could drastically reduce the cost of brackish and seawater desalting. In this work, we study the ion selectivity of membranes made of aligned double-walled carbon nanotubes with sub-2 nm diameter. Negatively charged groups are introduced at the opening of the carbon nanotubes by oxygen plasma treatment. Reverse osmosis experiments coupled with capillary electrophoresis analysis of permeate and feed show significant anion and cation rejection. Ion exclusion declines by increasing ionic strength (concentration) of the feed and by lowering solution pH; also, the highest rejection is observed for the A{sub m}{sup Z{sub A}} C{sub n}{sup Z{sub C}} salts (A=anion, C=cation, z= valence) with the greatest Z{sub A}/Z{sub C} ratio. Our results strongly support a Donnan-type rejection mechanism, dominated by electrostatic interactions between fixed membrane charges and mobile ions, while steric and hydrodynamic effects appear to be less important. Comparison with commercial nanofiltration membranes for water softening reveals that our carbon nanotube membranes provides far superior water fluxes for similar ion rejection capabilities.

  1. Optical Characteristic and Numerical Study of Gold Nanoparticles on Al2O3 coated Gold Film for Tunable Plasmonic Sensing Platforms

    E-Print Network [OSTI]

    Kik, Pieter

    Optical Characteristic and Numerical Study of Gold Nanoparticles on Al2O3 coated Gold Film nanoparticles on aluminum oxide (Al2O3) coated gold films with various oxide thicknesses. Dark-field scattering an investigation of the plasmon resonances of 60 nm diameter gold nanoparticles on Al2O3 coated gold film

  2. Low-noise low-jitter 32-pixels CMOS single-photon avalanche diodes array for single-photon counting from 300 nm to 900 nm

    SciTech Connect (OSTI)

    Scarcella, Carmelo; Tosi, Alberto, E-mail: alberto.tosi@polimi.it; Villa, Federica; Tisa, Simone; Zappa, Franco [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)] [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

    2013-12-15T23:59:59.000Z

    We developed a single-photon counting multichannel detection system, based on a monolithic linear array of 32 CMOS SPADs (Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Diodes). All channels achieve a timing resolution of 100 ps (full-width at half maximum) and a photon detection efficiency of 50% at 400 nm. Dark count rate is very low even at room temperature, being about 125 counts/s for 50 ?m active area diameter SPADs. Detection performance and microelectronic compactness of this CMOS SPAD array make it the best candidate for ultra-compact time-resolved spectrometers with single-photon sensitivity from 300 nm to 900 nm.

  3. ALS Evidence Confirms Combustion Theory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Evidence Confirms Combustion Theory ALS Evidence Confirms Combustion Theory Print Wednesday, 22 October 2014 11:43 Researchers recently uncovered the first step in the process...

  4. ALS Beamlines Directory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del(ANL-IN-03-032)8Li (59AJ76) (See the EnergyTAMANG,ALS Beamlines Directory PrintALS

  5. ALS User Meeting Archives

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItemResearch >InternshipDepartmentNeutrino-Induced1ALSALS Reveals NewALS TechniqueALS

  6. Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN

    SciTech Connect (OSTI)

    Li, Guowang; Song, Bo; Ganguly, Satyaki; Zhu, Mingda; Wang, Ronghua; Yan, Xiaodong; Verma, Jai; Protasenko, Vladimir; Grace Xing, Huili; Jena, Debdeep, E-mail: djena@nd.edu [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

    2014-05-12T23:59:59.000Z

    Double heterostructures of strained GaN quantum wells (QWs) sandwiched between relaxed AlN layers provide a platform to investigate the quantum-confined electronic and optical properties of the wells. The growth of AlN/GaN/AlN heterostructures with varying GaN quantum well thicknesses on AlN by plasma molecular beam epitaxy (MBE) is reported. Photoluminescence spectra provide the optical signature of the thin GaN QWs. Reciprocal space mapping in X-ray diffraction shows that a GaN layer as thick as ?28 nm is compressively strained to the AlN layer underneath. The density of the polarization-induced two-dimensional electron gas (2DEG) in the undoped heterostructures increases with the GaN QW thickness, reaching ?2.5?×?10{sup 13}/cm{sup 2}. This provides a way to tune the 2DEG channel density without changing the thickness of the top barrier layer. Electron mobilities less than ?400 cm{sup 2}/Vs are observed, leaving ample room for improvement. Nevertheless, owing to the high 2DEG density, strained GaN QW field-effect transistors with MBE regrown ohmic contacts exhibit an on-current density ?1.4?A/mm, a transconductance ?280 mS/mm, and a cut off frequency f{sub T}?104?GHz for a 100-nm-gate-length device. These observations indicate high potential for high-speed radio frequency and high voltage applications that stand to benefit from the extreme-bandgap and high thermal conductivity of AlN.

  7. Methotrexate intercalated ZnAl-layered double hydroxide

    SciTech Connect (OSTI)

    Chakraborty, Manjusha; Dasgupta, Sudip; Soundrapandian, Chidambaram [Central Glass and Ceramic Research Institute, CSIR, 196 Raja S.C. Mullick Road, Kolkata 700032 (India); Chakraborty, Jui, E-mail: jui@cgcri.res.in [Central Glass and Ceramic Research Institute, CSIR, 196 Raja S.C. Mullick Road, Kolkata 700032 (India); Ghosh, Swapankumar, E-mail: swapankumar.ghosh2@mail.dcu.ie [National Institute for Interdisciplinary Science and Technology (NIIST), CSIR, Trivandrum 695019 (India); Mitra, Manoj K. [Department of Metallurgical and Materials Engineering, Jadavpur University, Kolkata 700032 (India); Basu, Debabrata [Central Glass and Ceramic Research Institute, CSIR, 196 Raja S.C. Mullick Road, Kolkata 700032 (India)

    2011-09-15T23:59:59.000Z

    The anticancerous drug methotrexate (MTX) has been intercalated into an ZnAl-layered double hydroxide (LDH) using an anion exchange technique to produce LDH-MTX hybrids having particle sizes in the range of 100-300 nm. X-ray diffraction studies revealed increases in the basal spacings of ZnAl-LDH-MTX hybrid on MTX intercalation. This was corroborated by the transmission electron micrographs, which showed an increase in average interlayer spacing from 8.9 A in pristine LDH to 21.3 A in LDH-MTX hybrid. Thermogravimetric analyses showed an increase in the decomposition temperature for the MTX molecule in the LDH-MTX hybrid indicating enhanced thermal stability of the drug molecule in the LDH nanovehicle. The cumulative release profile of MTX from ZnAl-LDH-MTX hybrids in phosphate buffer saline (PBS) at pH 7.4 was successfully sustained for 48 h following Rigter-Peppas model release kinetics via diffusion. - Graphical abstract: ZnAl-layered double hydroxide intercalated with methotrexate ({approx}34% loading) promises the possibility of use of ZnAl-LDH material as drug carrier and in controlled delivery. Highlights: > ZnAl-layered double hydroxide methotrexate nanohybrid has been synthesized. > XRD and TEM studies on nanohybrid revealed successful intercalation of methotrexate. > TG and CHN analyses showed {approx}34 wt% of methotrexate loading into the nanohybrid. > Possibility of use of ZnAl-LDH material as drug carrier and in delivery.

  8. Demonstration of 12 nm resolution Fresnel zone plate lens based soft x-ray microscopy

    E-Print Network [OSTI]

    Chao, W.

    2010-01-01T23:59:59.000Z

    of 12 nm Resolution Fresnel Zone Plate Lens based Soft X-raynanofabrication process for Fresnel zone plate lenses. Theoptical performance of Fresnel zone plate lens based imaging

  9. Smith et al Supporting Information

    E-Print Network [OSTI]

    Jarvis, Erich D.

    Smith et al 1 Supporting Information for Smith et al. 2006, PLoS Computational Biology 2:e161-hyperpallium apicale; HF-hippocampal formation, and M-mesopallium. #12;Smith et al 2 FigureS2,nolinkswerefoundbetweenelectrodesindifferentbirds,andnolinkswerefoundintothesoundstimulusvariable. CombinedAnalysisofAllBirds'ElectrodesPlusSound #12;Smith et al 3 Analysis of Data from Subsections

  10. Amber-green light-emitting diodes using order-disorder Al[subscript x]In[subscript 1?x]P heterostructures

    E-Print Network [OSTI]

    Christian, Theresa M.

    We demonstrate amber-green emission from Al[subscript x]In[subscript 1– x]P light-emitting diodes (LEDs) with luminescence peaked at 566?nm and 600?nm. The LEDs are metamorphically grown on GaAs substrates via a graded ...

  11. Abstract of paper presented at the 2001 43rd Electronic Materials Conference (Notre Dame, IN, June 27-29, 2001) Properties of InAlP Native Oxides Supporting MOS Inversion-layer Behavior

    E-Print Network [OSTI]

    -V MOS applications.[1],[2] Two ~63 nm thick InAlP films, both with and without a 10 nm InGaP oxidation front stopping within the InAlP just above the underlying interface in samples with or without an InGaPAs oxidation. Finally, TEM imaging shows that InAlP oxides on structures with the InGaP barrier layer have much

  12. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26T23:59:59.000Z

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  13. Pb nanowire formation on Al/lead zirconate titanate surfaces in high-pressure hydrogen

    SciTech Connect (OSTI)

    Alvine, Kyle J.; Shutthanandan, V.; Arey, Bruce W.; Wang, Chong M.; Bennett, Wendy D.; Pitman, Stan G.

    2012-07-12T23:59:59.000Z

    Thin films of Al on lead zirconate titanate (PZT) annealed in high-pressure hydrogen at 100C exhibit surface Pb nanowire growth. Wire diameter is approximately 80 nm and length can exceed 100 microns. Based on microstructural analysis using electron microscopy and ion scattering, a vapor-solid scheme with hydrogen as a carrier gas was proposed as a growth mechanism. We expect that these observations may lead to controlled Pb nanowires growth through pattering of the Al film.

  14. Construction of a 1014.8nm fiber amplifier for quadrupling into the UV 

    E-Print Network [OSTI]

    Giuoco, Frank Joseph

    2004-09-30T23:59:59.000Z

    A fiber amplifier is constructed at 1014.8nm and then frequency doubled to produce 507.4nm. This could then be frequency doubled again to produce 253.7 radiation. The fiber amplifier consists of Ytterbium doped double-clad fiber cooled to low...

  15. Construction of a 1014.8nm fiber amplifier for quadrupling into the UV

    E-Print Network [OSTI]

    Giuoco, Frank Joseph

    2004-09-30T23:59:59.000Z

    A fiber amplifier is constructed at 1014.8nm and then frequency doubled to produce 507.4nm. This could then be frequency doubled again to produce 253.7 radiation. The fiber amplifier consists of Ytterbium doped double-clad fiber cooled to low...

  16. Proceedings of Nuclear and Emerging Technologies for Space 2013 Albuquerque, NM, February 25-28, 2013

    E-Print Network [OSTI]

    Meunier, Michel

    Proceedings of Nuclear and Emerging Technologies for Space 2013 Albuquerque, NM, February 25 #12;Proceedings of Nuclear and Emerging Technologies for Space 2013 Albuquerque, NM, February 25-28, 2013 Paper 6722 DRAGON5: Designing Computational Schemes Dedicated to Fission Nuclear Reactors

  17. Enhanced production of coherent pulsed radiation at 125 nm: the route towards a tabletop VUV laser.

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    surface with a 50-mm quartz lens. The VUV signal is measured by a calibrated CsI solar efficiency. Since deposition of opaque Hg on windows is an issue, very complex cell geometries have been to produce coherent 125-nm light with a single dye laser at 625.7 nm using a room-temperature Hg cell [3]. We

  18. A 60GHz, 13dBm Fully Integrated 65nm RF-CMOS Power Amplifier

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    simulation. A. Transistor Layout Caracterisation The size of the transistor depends on the maximum powerA 60GHz, 13dBm Fully Integrated 65nm RF-CMOS Power Amplifier Sofiane Aloui, Eric Kerhervé IMS-CNRS University of Toulouse Toulouse, France plana@laas.fr Abstract--A 65nm CMOS, 60GHz fully integrated power

  19. Coherence and Linewidth Studies of a 4-nm High Power FEL

    E-Print Network [OSTI]

    Fawley, W.M.

    2008-01-01T23:59:59.000Z

    bandwidth for a single-pass FEL amplifier initiated by SASE.Studies of a 4-nm High Power FEL W.M. Fawley, A.M. Sessler,Studies of a 4-nm High Power FEL W. M. Fawley and A. M.

  20. Magnetization switching in 70-nm-wide pseudo-spin-valve nanoelements Xiaobin Zhua)

    E-Print Network [OSTI]

    Grütter, Peter

    Fe, respectively, in this case separated by a spacer layer. The individual elements have dimensions of 70 nm 550 nm with submicron or deep- submicron dimensions.4,5 These PSV or MTJ elements con- sist of asymmetric sandwiches is magnetically hard. For elements with micron-scale dimensions, interactions between the layers can lead

  1. ALS Activity Reports

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del(ANL-IN-03-032)8Li (59AJ76) (See the EnergyTAMANG, APIL.AFTFutureALPES20thALS

  2. ALS Beamlines Directory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  3. ALS Beamlines Directory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  4. ALS Chemistry Lab

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  5. ALS Chemistry Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  6. ALS Chemistry Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  7. ALS Communications Group

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  8. About the ALS

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  9. ALS Communications Group

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  10. ALS Postdoctoral Fellowship Highlights

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  11. ALS User Meeting Archives

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  12. ALS in the News

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  13. 2013 ALS User Meeting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  14. Access to the ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  15. Investigation of Strain in AlGaN/GaN Multi Quantum Wells by Complementary Techniques

    SciTech Connect (OSTI)

    Devaraju, G.; Sathish, N.; Pathak, A. P. [School of Physics, University of Hyderabad, Central University (P.0), Hyderabad 500 046 (India); Dhamodaran, S. [Department of Physics, Indian Institute of Technology, IIT P O, Kanpur UP 208016 (India); Gaca, J.; Wojcik, M. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Turos, A. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Soltan Institute for Nuclear Studies, Swierk/Otwock, Warsaw (Poland); Arora, B. M. [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai-400 005 (India)

    2009-03-10T23:59:59.000Z

    Al{sub 0.49}Ga{sub 0.51}N(12 nm)/GaN (13 nm) Multi Quantum Wells of 15 periods are grown on sapphire by MOCVD technique. GaN/AlN, each of thickness 200 nm and 20 nm respectively, are used as buffer layers between substrate and epilayer to incorporate the strain in epilayers. It is a well established technique to engineer the band gap in Al{sub x}Ga{sub 1-x}N by adjusting alloy composition. These samples are used in visible and UV light emitters. In the present study, we employ a photoluminescence technique to estimate the composition and luminescence peak positions of AlGaN and GaN. Crystallinity and quality of interfaces have been studied by Rocking curve scan. The Threading Dislocations formed at the GaN buffer layer travel across the entire layers to the surface to form good quality films. Photo-luminescence results show a very sharp GaN peak at 3.4 eV, as observed and reported by others, which shows that samples are free from point defects.

  16. Nanotechnology is defined as materi-als and systems ranging from 1 to 100

    E-Print Network [OSTI]

    Wong, Pak Kin

    Nanotechnology is defined as materi- als and systems ranging from 1 to 100 nm which exhibit novel in the potentially revo- lutionary impacts that nanotechnology has to offer clinical medicine, particu- larly oncology. Numerous proof of concept appli- cations of nanotechnology have been described for high impact

  17. BOLETN OFICIAL DEL ESTADO Nm. 215 Sbado 7 de septiembre de 2013 Sec. III. Pg. 65237

    E-Print Network [OSTI]

    Rey Juan Carlos, Universidad

    actividades de investigación e innovación al servicio de la ciudadanía, del bienestar social y de un

  18. Solid state phase equilibria and intermetallic compounds of the Al-Cr-Ho system

    SciTech Connect (OSTI)

    Pang, Mingjun [Laboratory of Nonferrous Metal Materials and New Processing Technology, Ministry of Education, Guangxi University, Nanning, Guangxi 530004 (China) [Laboratory of Nonferrous Metal Materials and New Processing Technology, Ministry of Education, Guangxi University, Nanning, Guangxi 530004 (China); SAIC-GM-Wuling Automobile Co., Ltd., Liuzhou, Guangxi 545007 (China); Zhan, Yongzhong, E-mail: zyzmatres@yahoo.com.cn [Laboratory of Nonferrous Metal Materials and New Processing Technology, Ministry of Education, Guangxi University, Nanning, Guangxi 530004 (China)] [Laboratory of Nonferrous Metal Materials and New Processing Technology, Ministry of Education, Guangxi University, Nanning, Guangxi 530004 (China); Du, Yong [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China)] [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China)

    2013-02-15T23:59:59.000Z

    The solid state phase equilibria of the Al-Cr-Ho ternary system at 500 Degree-Sign C were experimentally investigated. The phase relations at 500 Degree-Sign C are governed by 14 three-phase regions, 29 two-phase regions and 15 single-phase regions. The existences of 10 binary compounds and 2 ternary phases have been confirmed. Al{sub 11}Cr{sub 2}, Al{sub 11}Cr{sub 4} and Al{sub 17}Ho{sub 2} were not found at 500 Degree-Sign C. Crystal structures of Al{sub 9}Cr{sub 4} and Al{sub 8}Cr{sub 4}Ho were determined by the Rietveld X-ray powder data refinement. Al{sub 9}Cr{sub 4} was found to exhibit cubic structure with space group I4-bar 3m (no. 217) and lattice parameters a=0.9107(5) nm. Al{sub 8}Cr{sub 4}Ho crystallizes in ThMn{sub 12} structure type with space group I4/mmm (no. 139) and lattice parameters a=0.8909(4) nm, c=0.5120(5) nm. It is concluded that the obtained Al{sub 4}Cr phase in this work should be {mu}-Al{sub 4}Cr by comparing with XRD pattern of the hexagonal {mu}-Al{sub 4}Mn compound. - Graphical abstract: The solid state phase equilibria of the Al-Cr-Ho ternary system at 500 Degree-Sign C. Highlights: Black-Right-Pointing-Pointer Al-Cr-Ho system has been investigated. Black-Right-Pointing-Pointer Al{sub 9}Cr{sub 4} has cubic structure with space group I4-bar 3m. Black-Right-Pointing-Pointer Al{sub 8}Cr{sub 4}Ho crystallizes in ThMn{sub 12} type with space group I4/mmm. Black-Right-Pointing-Pointer Al{sub 4}Cr phase is {mu}-type at 500 Degree-Sign C.

  19. Infrared photorefractive passive phase conjugation with BaTiO/sub 3/: Demonstrations with GaAlAs and 1. 09-. mu. m Ar/sup +/ lasers

    SciTech Connect (OSTI)

    Cronin-Golomb, M.; Lau, K.Y.; Yariv, A.

    1985-09-15T23:59:59.000Z

    We report photorefractive passive phase conjugation of GaAlAs laser radiation at 815--865 nm and Ar/sup +/ laser radiation at 1090 nm. A ring passive phase conjugate mirror was used with BaTiO/sub 3/ as the real-time holographic gain medium. With GaAlAs lasers phase conjugate reflectivities of up to 16% uncorrected for Fresnel losses were recorded. Effects of the strong associated feedback to the laser and attempts at mode locking are described. At 1090 nm the reflectivity remains approximately the same, but with a significantly longer time constant.

  20. Superconducting nanowire single-photon detectors at a wavelength of 940 nm

    E-Print Network [OSTI]

    Zhang, W J; You, L X; He, Y H; Zhang, L; Liu, X Y; Yang, X Y; Wu, J J; Guo, Q; Chen, S J; Wang, Z; Xie, X M

    2015-01-01T23:59:59.000Z

    We develop single-photon detectors comprising single-mode fiber-coupled superconducting nanowires, with high system detection efficiencies at a wavelength of 940 nm. The detector comprises a 6.5-nm-thick, 110-nm-wide NbN nanowire meander fabricated onto a Si substrate with a distributed Bragg reflector for enhancing the optical absorptance. We demonstrate that, via the design of a low filling factor (1/3) and active area ({\\Phi} = 10 {\\mu}m), the system reaches a detection efficiency of ~60% with a dark count rate of 10 Hz, a recovery time <12 ns, and a timing jitter of ~50 ps.

  1. Rare-earth plasma extreme ultraviolet sources at 6.5-6.7 nm

    SciTech Connect (OSTI)

    Otsuka, Takamitsu; Higashiguchi, Takeshi; Yugami, Noboru; Yatagai, Toyohiko [Department of Advanced Interdisciplinary Sciences, Center for Optical Research and Education (CORE), Utsunomiya University, Yoto 7-1-2, Utsunomiya, Tochigi 321-8585 (Japan); Kilbane, Deirdre; White, John; Dunne, Padraig; O'Sullivan, Gerry [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Jiang, Weihua [Department of Electrical Engineering, Nagaoka University of Technology, Kami-tomiokamachi 1603-1, Nagaoka, Niigata 940-2188 (Japan); Endo, Akira [Forschungszentrum Dresden, Bautzner Landstrs. 400, D-01328 Dresden (Germany)

    2010-09-13T23:59:59.000Z

    We have demonstrated a laser-produced plasma extreme ultraviolet source operating in the 6.5-6.7 nm region based on rare-earth targets of Gd and Tb coupled with a Mo/B{sub 4}C multilayer mirror. Multiply charged ions produce strong resonance emission lines, which combine to yield an intense unresolved transition array. The spectra of these resonant lines around 6.7 nm (in-band: 6.7 nm {+-}1%) suggest that the in-band emission increases with increased plasma volume by suppressing the plasma hydrodynamic expansion loss at an electron temperature of about 50 eV, resulting in maximized emission.

  2. National Environmental Policy Act (NEPA) compliance at Sandia National Laboratories/New Mexico (SNL/NM)

    SciTech Connect (OSTI)

    Wolff, T.A. [Sandia National Labs., Albuquerque, NM (United States). Community Involvement and Issues Management Dept.; Hansen, R.P. [Hansen Environmental Consultants, Englewood, CO (United States)

    1998-08-01T23:59:59.000Z

    This report on National Environmental Policy Act (NEPA) compliance at Sandia National Laboratories/New Mexico (SNL/NM) chronicles past and current compliance activities and includes a recommended strategy that can be implemented for continued improvement. This report provides a list of important references. Attachment 1 contains the table of contents for SAND95-1648, National Environmental Policy Act (NEPA) Compliance Guide Sandia National Laboratories (Hansen, 1995). Attachment 2 contains a list of published environmental assessments (EAs) and environmental impact statements (EISs) prepared by SNL/NM. Attachment 3 contains abstracts of NEPA compliance papers authored by SNL/NM and its contractors.

  3. Optical system for Argus 355-nm 90-mm aperture target-illumination experiments

    SciTech Connect (OSTI)

    Johnson, B.C.; Boyd, R.; Hermes, G.; Hildum, J.S.; Linford, G.; Martin, W.E.

    1982-02-01T23:59:59.000Z

    The requirements of laser alignment, crystal tuning, target alignment, and laser beam diagnosis are provided by this optical system. Initial setup and preshot alignment techniques are discussed. Layout and operation are contrasted with the 532 nm target experiments.

  4. LOS ALAMOS, N.M., June 18, 2014-Los Alamos National Laboratory...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    June 18, 2014 Los Alamos to partner with Toshiba to remotely and safely peer inside nuclear reactors LOS ALAMOS, N.M., June 18, 2014-Los Alamos National Laboratory today...

  5. Switching of 800 nm femtosecond laser pulses using a compact PMN-PT modulator

    E-Print Network [OSTI]

    Adany, Peter; Price, E. Shane; Johnson, Carey K.; Zhang, Run; Hui, Rongqing

    2009-03-13T23:59:59.000Z

    A voltage-controlled birefringent cell based on ceramic PMN-PT material is used to enable fast intensity modulation of femtosecond laser pulses in the 800 nm wavelength window. The birefringent cell based on a PMN-PT ...

  6. Sub-10-nm electron-beam lithography for templated placement of colloidal quantum dots

    E-Print Network [OSTI]

    Manfrinato, Vitor Riseti

    2011-01-01T23:59:59.000Z

    This thesis presents the investigation of resolution limits of electron-beam lithography (EBL) at the sub-10-nm scale. EBL patterning was investigated at low electron energy (2 keV) in a converted scanning electron microscope ...

  7. Sub-20nm substrate patterning using a self-assembled nanocrystal template

    E-Print Network [OSTI]

    Tabone, Ryan C

    2005-01-01T23:59:59.000Z

    A hexagonally close-packed monolayer of lead selenide quantum dots is presented as a template for patterning with a tunable resolution from 2 to 20nm. Spin-casting and micro-contact printing are resolved as methods of ...

  8. Comprehensive inverse modeling for the study of carrier transport models in sub-50nm MOSFETs

    E-Print Network [OSTI]

    Djomehri, Ihsan Jahed, 1976-

    2002-01-01T23:59:59.000Z

    Direct quantitative 2-D characterization of sub-50 nm MOSFETs continues to be elusive. This research develops a comprehensive indirect inverse modeling technique for extracting 2-D device topology using combined log(I)-V ...

  9. Carbon nanotube assisted formation of sub-50 nm polymeric nano-structures

    E-Print Network [OSTI]

    Lee, Chia-Hua

    2008-01-01T23:59:59.000Z

    A novel processing method was developed for sub-50 nm structures by integrating quantum dots (QDs) on patterned polymer substrates. Poly(styrene-alt-maleic anhydride) (PSMa) was prepared by the initiated chemical vapor ...

  10. Timing performance of 30-nm-wide superconducting nanowire avalanche photodetectors

    E-Print Network [OSTI]

    Najafi, Faraz

    We investigated the timing jitter of superconducting nanowire avalanche photodetectors (SNAPs, also referred to as cascade-switching superconducting single-photon detectors) based on 30-nm-wide nanowires. At bias currents ...

  11. 4.1.2 NANO FOUNTAIN PROBE WITH 40 NM WRITING RESOLUTION K.-H. Kim, N. Moldovan, H. D. Espinosa; "A Novel Nano Fountain Probe with sub-100 nm

    E-Print Network [OSTI]

    Shull, Kenneth R.

    4.1.2 NANO FOUNTAIN PROBE WITH 40 NM WRITING RESOLUTION K.-H. Kim, N. Moldovan, H. D. Espinosa; "A Novel Nano Fountain Probe with sub-100 nm Molecular Writing Resolution", Small, 2005, ASAP. Patent the first "nano-fountain pen" capable of depositing organic ink molecules in patterns as small as 40 nm

  12. Microstructure and Strengthening Mechanisms in an Ultrafine Grained Al-Mg-Sc Alloy Produced by Powder Metallurgy

    SciTech Connect (OSTI)

    Tammy J. Harrell; Troy D. Topping; Haiming Wen; Tao Hu; JULIE M. SCHOENUNG; ENRIQUE J. LAVERNIA

    2014-12-01T23:59:59.000Z

    Additions of Sc to an Al-Mg matrix were investigated, paying particular attention to the influence of Al3Sc precipitates and other dispersoids, as well as grain size, on mechanical behavior. Prior studies have shown that Sc significantly increases the strength of coarse-grained Al-Mg alloys. Prompted by these findings, we hypothesized that it would be of fundamental and technological interest to study the behavior of Sc additions to an ultrafine-grained (UFG) microstructure (e.g., 100’s nm). Accordingly, we investigated the microstructural evolution and mechanical behavior of a cryomilled ultrafine grained Al-5Mg-0.4Sc (wt pct) and compared the results to those of an equivalent fine-grained material (FG) produced by powder metallurgy. Experimental materials were consolidated by hot isostatic pressing (HIP’ing) followed by extrusion or dual mode dynamic forging. Under identical processing conditions, UFG materials generate large Al3Sc precipitates with an average diameter of 154 nm and spaced approximately 1 to 3 µm apart, while precipitates in the FG materials have a diameter of 24 nm and are spaced 50 to 200 nm apart. The strengthening mechanisms are calculated for all materials and it is determined that the greatest strengthening contributions for the UFG and FG materials are Mg-O/N dispersion strengthening and precipitate strengthening, respectively.

  13. ALS Evidence Confirms Combustion Theory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Evidence Confirms Combustion Theory Print Researchers recently uncovered the first step in the process that transforms gas-phase molecules into solid particles like soot and...

  14. Oxidation resistant nanocrystalline MCrAl(Y) coatings and methods of forming such coatings

    DOE Patents [OSTI]

    Cheruvu, Narayana S.; Wei, Ronghua

    2014-07-29T23:59:59.000Z

    The present disclosure relates to an oxidation resistant nanocrystalline coating and a method of forming an oxidation resistant nanocrystalline coating. An oxidation resistant coating comprising an MCrAl(Y) alloy may be deposited on a substrate, wherein M, includes iron, nickel, cobalt, or combinations thereof present greater than 50 wt % of the MCrAl(Y) alloy, chromium is present in the range of 15 wt % to 30 wt % of the MCrAl(Y) alloy, aluminum is present in the range of 6 wt % to 12 wt % of the MCrAl(Y) alloy and yttrium, is optionally present in the range of 0.1 wt % to 0.5 wt % of the MCrAl(Y) alloy. In addition, the coating may exhibit a grain size of 200 nm or less as deposited.

  15. EA-2005: Chromium Plume Control Interim Measure And Plume-Center Characterization, Los Alamos National Laboratory, Los Alamos, NM

    Broader source: Energy.gov [DOE]

    EA-2005: Chromium Plume Control Interim Measure And Plume-Center Characterization, Los Alamos National Laboratory, Los Alamos, NM

  16. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

    2013-12-04T23:59:59.000Z

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  17. Life-Cycle Energy Demand of Computational Logic: From High-Performance 32nm CPU to Ultra-Low-Power 130nm MCU

    E-Print Network [OSTI]

    Bol, David; Boyd, Sarah; Dornfeld, David

    2011-01-01T23:59:59.000Z

    Boyd et al. : “Life-cycle energy demand and global warmingLife-Cycle Energy Demand of Computational Logic: From High-to assess the life-cycle energy demand of its products for

  18. Life-Cycle Energy Demand of Computational Logic: From High-Performance 32nm CPU to Ultra-Low-Power 130nm MCU

    E-Print Network [OSTI]

    Bol, David; Boyd, Sarah; Dornfeld, David

    2011-01-01T23:59:59.000Z

    Boyd et al. : “Life-cycle energy demand and global warmingLife-Cycle Energy Demand of Computational Logic: From High-to assess the life-cycle energy demand of its products for

  19. Optical breakdown threshold investigation of 1064 nm laser induced air plasmas

    SciTech Connect (OSTI)

    Thiyagarajan, Magesh; Thompson, Shane [Plasma Engineering Research Lab (PERL), College of Science and Engineering, Texas A and M University-Corpus Christi, Texas 78412 (United States)

    2012-04-01T23:59:59.000Z

    We present the theoretical and experimental measurements and analysis of the optical breakdown threshold for dry air by 1064 nm infrared laser radiation and the significance of the multiphoton and collisional cascade ionization process on the breakdown threshold measurements over pressures range from 10 to 2000 Torr. Theoretical estimates of the breakdown threshold laser intensities and electric fields are obtained using two distinct theories namely multiphoton and collisional cascade ionization theories. The theoretical estimates are validated by experimental measurements and analysis of laser induced breakdown processes in dry air at a wavelength of 1064 nm by focusing 450 mJ max, 6 ns, 75 MW max high-power 1064 nm IR laser radiation onto a 20 {mu}m radius spot size that produces laser intensities up to 3 - 6 TW/cm{sup 2}, sufficient for air ionization over the pressures of interest ranging from 10 to 2000 Torr. Analysis of the measured breakdown threshold laser intensities and electric fields are carried out in relation with classical and quantum theoretical ionization processes, operating pressures. Comparative analysis of the laser air breakdown results at 1064 nm with corresponding results of a shorter laser wavelength (193 nm) [M. Thiyagarajan and J. E. Scharer, IEEE Trans. Plasma Sci. 36, 2512 (2008)] and a longer microwave wavelength (10{sup 8} nm) [A. D. MacDonald, Microwave Breakdown in Gases (Wiley, New York, 1966)]. A universal scaling analysis of the breakdown threshold measurements provided a direct comparison of breakdown threshold values over a wide range of frequencies ranging from microwave to ultraviolet frequencies. Comparison of 1064 nm laser induced effective field intensities for air breakdown measurements with data calculated based on the collisional cascade and multiphoton breakdown theories is used successfully to determine the scaled collisional microwave portion. The measured breakdown threshold of 1064 nm laser intensities are then scaled to classical microwave breakdown theory after correcting for the multiphoton ionization process for different pressures and good agreement, regarding both pressure dependence and breakdown threshold electric fields, is obtained. The effect of the presence of submicron particles on the 1064 nm breakdown threshold was also investigated. The measurements show that higher breakdown field is required, especially at lower pressures, and in close agreement with classical microwave breakdown theory and measurements in air.

  20. The SEMATECH Berkeley microfield exposure tool: learning a the 22-nm node and beyond

    SciTech Connect (OSTI)

    Naulleau, Patrick; Anderson, Christopher; Baclea-an, Lorie-Mae; Denham, Paul; George, Simi; Goldberg, Kenneth A.; Goldstein, Michael; Hoef, Brian; Hudyma, Russ; Jones, Gideon; Koh, Chawon; La Fontaine, Bruno; McClinton, Brittany; Miyakawa, Ryan; Montgomery, Warren; Roller, John; Wallow, Tom; Wurm, Stefan

    2009-02-16T23:59:59.000Z

    Microfield exposure tools (METs) continue to playa dominant role in the development of extreme ultraviolet (EUV) resists. One of these tools is the SEMATECH Berkeley 0.3-NA MET operating as a SEMATECH resist and mask test center. Here we present an update summarizing the latest resist test and characterization results. The relatively small numerical aperture and limited illumination settings expected from 1st generation EUV production tools make resist resolution a critical issue even at the 32-nm node. In this presentation, sub 22 nm half pitch imaging results of EUV resists are reported. We also present contact hole printing at the 30-nm level. Although resist development has progressed relatively well in the areas of resolution and sensitivity, line-edge-roughness (LER) remains a significant concern. Here we present a summary of recent LER performance results and consider the effect of system-level contributors to the LER observed from the SEMA TECH Berkeley microfield tool.

  1. A compact ultranarrow high-power laser system for experiments with 578nm Ytterbium clock transition

    E-Print Network [OSTI]

    Cappellini, Giacomo; Mancini, Marco; Pagano, Guido; Pizzocaro, Marco; Fallani, Leonardo; Catani, Jacopo

    2015-01-01T23:59:59.000Z

    In this paper we present the realization of a compact, high-power laser system able to excite the Ytterbium clock transition at 578 nm. Starting from an external-cavity laser based on a quantum dot chip at 1156 nm with an intra-cavity electro-optic modulator, we were able to obtain up to 60 mW of visible light at 578 nm via frequency doubling. The laser is locked with a 500 kHz bandwidth to a ultra-low-expansion glass cavity stabilized at its zero coefficient of thermal expansion temperature through an original thermal insulation and correction system. This laser allowed the observation of the clock transition in fermionic $^{173}$Yb with a < 50 Hz linewidth over 5 minutes, limited only by a residual frequency drift of some 0.1 Hz/s.

  2. Al Akhawayn University Al Akhawayn partner of TUM since 2002

    E-Print Network [OSTI]

    Cengarle, María Victoria

    Haddouti · Dissertation at Chair for Databases (Prof. Bayer), Professor at Al Akhawayn, now working at BMW (TUM & AUI Alumni) · BMW, Hachim.haddouti@bmw.de #12;Double Degree TUM - Georgia Tech Fakultät für

  3. Al Akhawayn University Al Akhawayn partner of TUM since 2002

    E-Print Network [OSTI]

    Cengarle, María Victoria

    Haddouti · Dissertation at Chair for Databases (Prof. Bayer), Professor at Al Akhawayn, now working at BMW) · BMW, Hachim.haddouti@bmw.de #12;Double Degree TUM - Georgia Tech Fakultät für Informatik TUM School

  4. Al Akhawayn University Al Akhawayn partner of TUM since 2002

    E-Print Network [OSTI]

    Cengarle, María Victoria

    Haddouti · Dissertation at Chair for Databases (Prof. Bayer), Professor at Al Akhawayn, now working at BMW Alumni) · BMW, Hachim.haddouti@bmw.de #12;Double Degree TUM - Georgia Tech Fakultät für Informatik TUM

  5. A universal low-noise analog receiver baseband in 65-nm CMOS

    E-Print Network [OSTI]

    Tekin, Ahmet; Elwan, Hassan; Pedrotti, Kenneth

    2010-01-01T23:59:59.000Z

    P. , et al. (2005). A direct- conversion receiver for DVB-analog design for direct conversion receiver. In Proceedingsof the wide-band direct conversion receiver including the

  6. Proceedings of the American Solar Energy Society 98 Conference Albuquerque, NM (June 1998)

    E-Print Network [OSTI]

    Delaware, University of

    Proceedings of the American Solar Energy Society 98 Conference Albuquerque, NM (June 1998) 131 and Environmental Policy University of Delaware Newark, DE 19716 Steven Letendre Green Mountain College One College Circle Poultney, VT 05764 and Center for Energy and Environmental Policy University of Delaware Donald W

  7. A high-power 626 nm diode laser system for Beryllium ion trapping

    E-Print Network [OSTI]

    H. Ball; M. W. Lee; S. D. Gensemer; M. J. Biercuk

    2013-04-07T23:59:59.000Z

    We describe a high-power, frequency-tunable, external cavity diode laser (ECDL) system near 626 nm useful for laser cooling of trapped $^9$Be$^+$ ions. A commercial single-mode laser diode with rated power output of 170 mW at 635 nm is cooled to $\\approx - 31$ C, and a single longitudinal mode is selected via the Littrow configuration. In our setup, involving multiple stages of thermoelectric cooling, we are able to obtain $\\approx$130 mW near 626 nm, sufficient for efficient frequency doubling to the required Doppler cooling wavelengths near 313 nm in ionized Beryllium. In order to improve nonlinear frequency conversion efficiency, we achieve larger useful power via injection locking of a slave laser. In this way the entirety of the slave output power is available for frequency doubling, while analysis may be performed on the master output. We believe that this simple laser system addresses a key need in the ion trapping community and dramatically reduces the cost and complexity associated with Beryllium ion trapping experiments.

  8. Development of a 1319-nm Laser Radar Using Fiber Optics and RF Pulse Compression

    E-Print Network [OSTI]

    Kansas, University of

    Development of a 1319-nm Laser Radar Using Fiber Optics and RF Pulse Compression Christopher T of this concept. Our laboratory breadboard uses standard, single-mode optical fiber, off-the-shelf fiber-optic IMPLEMENTATION 3.1 Transmitter--Single-mode laser 3.2 Transmitter--Single-mode fiber 3.3 Transmitter--Optical

  9. Highly efficient semiconductor optical amplifier for the 820-860-nm spectral range

    SciTech Connect (OSTI)

    Lobintsov, A A; Shramenko, M V [Superlum Diodes Ltd., Moscow (Russian Federation); Uspenskii, Mikhail B; Shishkin, Viktor A [M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation); Yakubovich, S D [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)

    2010-06-23T23:59:59.000Z

    A single-pass optical amplifier with a gain up to 32 dB at a wavelength of 840 nm is developed. Its high reliability is demonstrated at a single-mode fibre-coupled cw output power up to 50 mW. Examples of efficient application of this amplifier in MOPA systems are presented. (lasers)

  10. Laser amplification at 18. 2 nm in recombining plasma from a laser-irradiated carbon fiber

    SciTech Connect (OSTI)

    Chenais-Popovics, C.; Corbett, R.; Hooker, C.J.; Key, M.H.; Kiehn, G.P.; Lewis, C.L.S.; Pert, G.J.; Regan, C.; Rose, S.J.; Sadaat, S.

    1987-11-09T23:59:59.000Z

    Extreme ultraviolet laser amplification has been observed for the C VI Balmer-..cap alpha.. transition at 18.2 nm, with use of a novel optical system to irradiate up to 1 cm length of carbon fiber target. The measurements were time resolved and indicated peak single-transit amplification of about 30 times.

  11. A 90nm CMOS Direct Conversion Transmitter for WCDMA Xuemin Yang1

    E-Print Network [OSTI]

    A 90nm CMOS Direct Conversion Transmitter for WCDMA Xuemin Yang1 , Anosh Davierwalla2 , David Mann3 IBM, Burlington, VT Abstract -- A linear high output power CMOS direct conversion transmitter for wideÃ?5 QFN. Index Terms -- direct conversion, CMOS, WCDMA, transmitter, third order distortion cancellation

  12. Efficient methylammonium lead iodide perovskite solar cells with active layers from 300 to 900 nm

    SciTech Connect (OSTI)

    Momblona, C.; Malinkiewicz, O.; Soriano, A.; Gil-Escrig, L.; Bandiello, E.; Scheepers, M.; Bolink, H. J., E-mail: henk.bolink@uv.es [Instituto de Ciencia Molecular, Universidad de Valencia, C/Catedrático J. Beltrán 2, 46980 Paterna, Valencia (Spain); Roldán-Carmona, C. [Instituto de Ciencia Molecular, Universidad de Valencia, C/Catedrático J. Beltrán 2, 46980 Paterna, Valencia (Spain); Department of Physical Chemistry and Applied Thermodynamics, University of Córdoba, Campus Rabanales, Ed. C3, 14014, Córdoba (Spain); Edri, E. [Department of Materials and Interfaces, Weizmann Institute of Science, Herzl St. 34, Rehovot 76100 (Israel)

    2014-08-01T23:59:59.000Z

    Efficient methylammonium lead iodide perovskite-based solar cells have been prepared in which the perovskite layer is sandwiched in between two organic charge transporting layers that block holes and electrons, respectively. This configuration leads to stable and reproducible devices that do not suffer from strong hysteresis effects and when optimized lead to efficiencies close to 15%. The perovskite layer is formed by using a dual-source thermal evaporation method, whereas the organic layers are processed from solution. The dual-source thermal evaporation method leads to smooth films and allows for high precision thickness variations. Devices were prepared with perovskite layer thicknesses ranging from 160 to 900 nm. The short-circuit current observed for these devices increased with increasing perovskite layer thickness. The main parameter that decreases with increasing perovskite layer thickness is the fill factor and as a result optimum device performance is obtained for perovskite layer thickness around 300 nm. However, here we demonstrate that with a slightly oxidized electron blocking layer the fill factor for the solar cells with a perovskite layer thickness of 900 nm increases to the same values as for the devices with thin perovskite layers. As a result the power conversion efficiencies for the cells with 300 and 900 nm are very similar, 12.7% and 12%, respectively.

  13. Performance of a High-Concentration Erbium-Doped Fiber Amplifier with 100 nm Amplification Bandwidth

    SciTech Connect (OSTI)

    Hajireza, P.; Shahabuddin, N. S.; Abbasi-Zargaleh, S.; Emami, S. D.; Abdul-Rashid, H. A.; Yusoff, Z. [Center for Advanced Devices and Systems, Faculty of Engineering, Multimedia University, 63100 Cyberjaya (Malaysia)

    2010-07-07T23:59:59.000Z

    Increasing demand for higher bandwidth has driven the need for higher Wavelength Division Multiplexing (WDM) channels. One of the requirements to achieve this is a broadband amplifier. This paper reports the performance of a broadband, compact, high-concentration and silica-based erbium-doped fiber amplifier. The amplifier optimized to a 2.15 m long erbium-doped fiber with erbium ion concentration of 2000 ppm. The gain spectrum of the amplifier has a measured amplification bandwidth of 100 nm using a 980 nm laser diode with power of 150 mW. This silica-based EDFA shows lower noise figure, higher gain and wider bandwidth in shorter wavelengths compared to Bismuth-based EDFA with higher erbium ion concentration of 3250 ppm at equivalent EDF length. The silica-based EDF shows peak gain at 22 dB and amplification bandwidth between 1520 nm and 1620 nm. The lowest noise figure is 5 dB. The gain is further improved with the implementation of enhanced EDFA configurations.

  14. An EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm

    E-Print Network [OSTI]

    An EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm Kenneth lithography design rules. The proposed microscope features an array of user-selectable Fresnel zoneplate-EUV, Fresnel zoneplate microscope, the AIT has been in the vanguard of high-resolution EUV mask imaging

  15. FIRST LASING AT 32 NM OF THE VUV-FEL AT DESY S. Schreiber

    E-Print Network [OSTI]

    FIRST LASING AT 32 NM OF THE VUV-FEL AT DESY S. Schreiber , DESY, Hamburg, Germany for the VUV-FEL team Abstract The VUV-FEL is a free electron laser user facility being commissioned at DESY. It is based on the TTF-FEL, which was in operation until end of 2002 providing a photon beam for two pilot

  16. 1-10 nM E2 E2 30 E2

    E-Print Network [OSTI]

    Kawato, Suguru

    076 1. E2 E2 E2 E2 2. E2 E2 2 E2 1 1-10 nM E2 5), 7) E2 30 E2 7) E2 512076-0792011 Modulation of Learning and Memory slowly but also rapidly. Slow actions of estradiol (E2) occur via nuclear receptors (ER), while rapid E2

  17. Diode-pumped Nd:YAG laser emitting at 899 nm Marc Castaing

    E-Print Network [OSTI]

    Boyer, Edmond

    technologies have been developed to reach the blue range: GaN la- ser diodes, frequency-doubled laser diodes to the doping percentage, P cm-2 the absorption cross section at the pump wavelength 808 nm , A s-1 the inverse

  18. Sub-10 nm Self-Enclosed Self-Limited Nanofluidic Channel Arrays

    E-Print Network [OSTI]

    Sub-10 nm Self-Enclosed Self-Limited Nanofluidic Channel Arrays Qiangfei Xia, Keith J. Morton report a new method to fabricate self-enclosed optically transparent nanofluidic channel arrays with sub. Here we propose and demonstrate a new method to fabricate enclosed optically transparent nanofluidic

  19. Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasers

    SciTech Connect (OSTI)

    Wei, Wei; Zhang, Xia, E-mail: xzhang@bupt.edu.cn; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 66, Beijing 100876 (China); Liu, Yange, E-mail: ygliu@nankai.edu.cn; Wang, Zhi [Key Laboratory of Optical Information and Technology, Ministry of Education and Institute of Modern Optics, Nankai University, Tianjin 300071 (China)

    2014-06-02T23:59:59.000Z

    Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasers are proposed and demonstrated. The nanowires are axially excited by evanescent wave outside a microfiber with a diameter about 10??m via a ns-pulse laser. The lasing emission with a low effective threshold less than 90 nJ is achieved at 868.62?nm along with a linewidth of ?1.8?nm. Moreover, multiple lasing lines in a wavelength range from 852.56?nm to 882.48?nm are observed. The mechanism of diverse lasing wavelengths is revealed. Furthermore, the proposed GaAs/AlGaAs nanowire laser has advantages such as simple structure, easy to operate, and controllable lasing wavelength, tending to be practical in optical communications and integrated photonic circuits.

  20. Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys

    SciTech Connect (OSTI)

    Nepal, N.; Zavada, J. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Lee, D. S.; Steckl, A. J. [Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, Ohio 45221 (United States); Sedhain, A.; Lin, J. Y.; Jiang, H. X. [Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409 (United States)

    2009-03-16T23:59:59.000Z

    The ultraviolet (UV) photoluminescence (PL) properties of Tm-doped Al{sub x}Ga{sub 1-x}N (0.39{<=}x{<=}1) alloys grown by solid-source molecular beam epitaxy were probed using above-bandgap excitation from a laser source at 197 nm. The PL spectra show dominant UV emissions at 298 and 358 nm only for samples with x=1 and 0.81. Temperature dependence of the PL intensities of these emission lines reveals exciton binding energies of 150 and 57 meV, respectively. The quenching of these UV emissions appears related to the thermal activation of the excitons bound to rare-earth structured isovalent (RESI) charge traps, which transfer excitonic energy to Tm{sup 3+} ions resulting in the UV emissions. A model of the RESI trap levels in AlGaN alloys is presented.

  1. Part I:Part I: Degradation in 3.2 nm Gate Oxides:Degradation in 3.2 nm Gate Oxides: Effects on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET

    E-Print Network [OSTI]

    Anlage, Steven

    1 Part I:Part I: Degradation in 3.2 nm Gate Oxides:Degradation in 3.2 nm Gate Oxides: Effects--Thin GateThin Gate Oxide DegradationOxide Degradation #12;2 AcknowledgmentsAcknowledgments University), ECE Miles Wiscombe (UG), ECE #12;3 Part I:Part I: Degradation in 3.2 nm Gate Oxides:Degradation in 3

  2. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

    2014-04-24T23:59:59.000Z

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  3. Characterization of nanosized Al{sub 2}(WO{sub 4}){sub 3}

    SciTech Connect (OSTI)

    Nihtianova, D., E-mail: diana.nihtianova@gmail.com [Institute of Mineralogy and Crystallography, Bulgarian Academy of Sciences, Acad. Georgi Bonchev Str., bl. 107, 1113 Sofia (Bulgaria); Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. Georgi Bonchev Str., bl. 11, 1113 Sofia (Bulgaria); Velichkova, N., E-mail: veli4kov@svr.igic.bas.bg [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. Georgi Bonchev Str., bl. 11, 1113 Sofia (Bulgaria); Nikolova, R., E-mail: rosica.pn@clmc.bas.bg [Institute of Mineralogy and Crystallography, Bulgarian Academy of Sciences, Acad. Georgi Bonchev Str., bl. 107, 1113 Sofia (Bulgaria); Koseva, I., E-mail: ikosseva@svr.igic.bas.bg [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. Georgi Bonchev Str., bl. 11, 1113 Sofia (Bulgaria); Yordanova, A., E-mail: a.yordanova@svr.igic.bas.bg [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. Georgi Bonchev Str., bl. 11, 1113 Sofia (Bulgaria); Nikolov, V., E-mail: vnikolov@svr.igic.bas.bg [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. Georgi Bonchev Str., bl. 11, 1113 Sofia (Bulgaria)

    2011-11-15T23:59:59.000Z

    Graphical abstract: TEM method allows to detect small quantities of impurities not detectable by other methods. In our case impurities of W{sub 5}O{sub 14} are detected in Al{sub 2}(WO{sub 4}){sub 3} nanopowder. Highlights: {yields} Nanosized Al{sub 2}(WO{sub 4}){sub 3} by simple co-precipitation method. {yields} Spherical particles with mean size of 22 nm distributed between 10 and 40 nm at 630 {sup o}C. {yields} XRD, DTA and TEM confirm well defined products with perfect structure. {yields} TEM locality allows detection of impurities not detectable by XRD and DTA. -- Abstract: Nanosized aluminum tungstate Al{sub 2}(WO{sub 4}){sub 3} was prepared by co-precipitation reaction between Na{sub 2}WO{sub 4} and Al(NO{sub 3}){sub 3} aqueous solutions. The powder size and shape, as well as size distribution are estimated after different conditions of powder preparation. The purity of the final product was investigated by XRD and DTA analyses, using the single crystal powder as reference. Between the specimen and the reference no difference was detected. The crystal structure of Al{sub 2}(WO{sub 4}){sub 3} nanosized powder was confirmed by TEM (SAED, HRTEM). In additional, TEM locality allows to detect some W{sub 5}O{sub 14} impurities, which are not visible by conventional X-ray powder diffraction and thermal analyses.

  4. Effect of AC target power on AlN film quality

    SciTech Connect (OSTI)

    Knisely, Katherine, E-mail: kknisely@umich.edu; Grosh, Karl [Department of Mechanical Engineering, University of Michigan, 2026 GG Brown—2350 Hayward St., Ann Arbor, Michigan 48109 (United States)

    2014-09-01T23:59:59.000Z

    The influence of alternating current (AC) target power on film stress, roughness, and x-ray diffraction rocking curve full width half maximum (FWHM) was examined for AlN films deposited using S-gun magnetron sputtering on insulative substrates consisting of Si wafers with 575?nm thermal oxide. As the AC target power was increased from 5 to 8?kW, the deposition rate increased from 9.3 to 15.9?A/s, film stress decreased from 81 to ?170?MPa, and the rocking curve FWHM increased from 0.98 to 1.03°. AlN film behavior is observed to change with target life; films deposited at 200?kWh target life were approximately 40?MPa more compressive and had 0.02° degree higher rocking curve FWHM values than films deposited at 130?kWh. AlN films deposited in two depositions were compared with films deposited in a single deposition, in order to better characterize the growth behavior and properties of AlN films deposited on an existing AlN film, which is not well understood. Two deposition films, when compared with single deposition films, showed no variation in residual stress trends or grain size behavior, but the average film roughness increased from 0.7 to 1.4?nm and rocking curve FWHM values increased by more than 0.25°.

  5. Electron density distribution and crystal structure of 27R-AlON, Al{sub 9}O{sub 3}N{sub 7}

    SciTech Connect (OSTI)

    Asaka, Toru; Banno, Hiroki [Department of Materials Science and Engineering, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Funahashi, Shiro; Hirosaki, Naoto [Nano Ceramics Center, National Institute for Materials Science (NIMS), Ibaraki 305-0044 (Japan); Fukuda, Koichiro, E-mail: fukuda.koichiro@nitech.ac.jp [Department of Materials Science and Engineering, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)

    2013-08-15T23:59:59.000Z

    The crystal structure of Al{sub 9}O{sub 3}N{sub 7} was characterized by laboratory X-ray powder diffraction (CuK?{sub 1}). The title compound is trigonal with space group R3-bar m (centrosymmetric). The hexagonal unit-cell dimensions (Z=3) are a=0.30656(2) nm, c=7.2008(3) nm and V=0.58605(5) nm{sup 3}. The initial structural model was derived by the powder charge-flipping method and subsequently refined by the Rietveld method. The final structural model showed the positional disordering of two of the five types of Al sites. The maximum-entropy method-based pattern fitting method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensity partitioning was minimized. The disordered crystal structure was successfully described by overlapping five types of domains with ordered atom arrangements. The distribution of atomic positions in one of the five types of domains can be achieved in the space group R3{sup ¯}m. The atom arrangements in the four other domains are noncentrosymmetric with the space group R3m. Two of the four types of domains are related by a pseudo-symmetry inversion, and the two remaining domains also have each other the inversion pseudo-symmetry. The very similar domain structure has been also reported for 21R-AlON (Al{sub 7}O{sub 3}N{sub 5}) in our previous study. - Graphical abstract: A bird’s eye view of electron densities up to 50% (0.074 nm{sup ?3}) of the maximum on the plane parallel to (110) with the corresponding atomic arrangements of Al{sub 9}O{sub 3}N{sub 7}. Highlights: • Crystal structure of Al{sub 9}O{sub 3}N{sub 7} is determined by laboratory X-ray powder diffraction. • The atom arrangements are represented by the split-atom model. • The maximum-entropy method-based pattern fitting method is used to confirm the validity of the model. • The disordered structure is described by overlapping five types of domains with ordered atom arrangements.

  6. Course Syllabus: Chemistry 3AL Course Information

    E-Print Network [OSTI]

    Alvarez-Cohen, Lisa

    Course Syllabus: Chemistry 3AL Course Information Course Name Chemistry 3AL Course Instructor are online. Chemistry 3AL Syllabus https://elearning.berkeley.edu/AngelUploads/Content/2013SUC... 1 of 5 5

  7. Implementation of a doubling cavity to produce a 423 nm light source for the excitation of Ca isotopes

    SciTech Connect (OSTI)

    Higashimaru, H.; Kitajima, T.; Hasegawa, S. [Department of Quantum Engineering and Systems Science, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2009-03-17T23:59:59.000Z

    For selective excitation of isotopes of Ca, a 423 nm narrow linewidth, continuous wave (CW) light source which corresponds to the S-P transition (4s{sup 21}S{sub 0}-4s4p {sup 1}P{sub 1}) is required. A solid state CW light source which generates 423 nm is difficult to commercially use. Therefore, we have developed a Second Harmonic Generation (SHG) system to obtain 423 nm lights from 846 nm lights by using a nonlinear optical crystal.

  8. Stable formation of ultrahigh power-density 248 nm channels in Xe cluster targets

    SciTech Connect (OSTI)

    Borisov, Alex B.; Racz, Ervin; Khan, Shahab F.; Poopalasingam, Sankar; McCorkindale, John C.; Boguta, John; Longworth, James W.; Rhodes, Charles K. [Laboratory for X-ray Microimaging and Bioinformatics, Department of Physics, University of Illinois at Chicago, Chicago, IL 60607-7059 (United States); KFKI Research Institute for Particle and Nuclear Physics, EURATOM Association, P.O. Box 49, 1525 Budapest (Hungary)

    2012-07-11T23:59:59.000Z

    The optimization of relativistic and ponderomotive self-channeling of ultra-powerful 248 nm laser pulses launched in underdense plasmas with an appropriate longitudinal gradient in the electron density profile located at the initial stage of the self-channeling leads to (1) stable channel formation and (2) highly efficient power compression producing power densities in the 10{sup 19}-10{sup 20} W/cm{sup 3} range. The comparison of theoretical studies with experimental results involving the correlation of (a) Thomson images of the electron density with (b) x-ray images of the channel morphology demonstrates that more than 90% of the incident 248 nm power can be trapped in stable channels and that this stable propagation can be extended to power levels significantly exceeding the critical power of the self-channeling process.

  9. Laser-plasma source parameters for Kr, Gd, and Tb ions at 6.6 nm

    SciTech Connect (OSTI)

    Masnavi, Majid; Szilagyi, John; Parchamy, Homaira; Richardson, Martin C. [The Townes Laser Institute, College of Optics and Photonics, University of Central Florida, 4000 Central Florida Blvd., Orlando, Florida 32816 (United States)] [The Townes Laser Institute, College of Optics and Photonics, University of Central Florida, 4000 Central Florida Blvd., Orlando, Florida 32816 (United States)

    2013-04-22T23:59:59.000Z

    There is increasing interest in extreme-ultraviolet (EUV) laser-based lamps for sub-10-nm lithography operating in the region of 6.6 nm. A collisional-radiative model is developed as a post-processor of a hydrodynamic code to investigate emission from resonance lines in Kr, Gd, and Tb ions under conditions typical for mass-limited EUV sources. The analysis reveals that maximum conversion efficiencies of Kr occur at 5 Multiplication-Sign 10{sup 10}W/cm{sup 2}, while for Gd and Tb it was Asymptotically-Equal-To 0.9%/2{pi}sr for laser intensities of (2-5) Multiplication-Sign 10{sup 12}W/cm{sup 2}.

  10. Promethium-doped phosphate glass laser at 933 and 1098 nm

    SciTech Connect (OSTI)

    Krupke, W.F.; Shinn, M.D.; Kirchoff, T.A.; Finch, C.B.; Boatner, L.A.

    1987-12-28T23:59:59.000Z

    A promethium (Pm/sup 3 +/) laser has been demonstrated for the first time. Trivalent promethium 147 doped into a lead-indium-phosphate glass etalon was used to produce room-temperature four-level laser emission at wavelengths of 933 and 1098 nm. Spectroscopic and kinetic measurements have shown that Pm/sup 3 +/ is similar to Nd/sup 3 +/ as a laser active ion.

  11. Investigation of a Polarization Controller in Titanium Diffused Lithium Niobate Waveguide near 1530 nm Wavelength

    E-Print Network [OSTI]

    Sung, Won Ju

    2013-12-10T23:59:59.000Z

    INVESTIGATION OF A POLARIZATION CONTROLLER IN TITANIUM DIFFUSED LITHIUM NIOBATE WAVEGUIDE NEAR 1530 NM WAVELENGTH A Dissertation by WON JU SUNG Submitted to the Office of Graduate and Professional Studies of Texas A&M University... systems are being commercialized [1-3], and efforts for 400G modulators are being pursued [1, 4]. Various materials have been explored for high speed devices need [5, 6], and lithium niobate remains the most attractive choice currently [7]. Fiber...

  12. Formation of Micro and Nano Structures Using VUV 157 nm Laser Radiation

    SciTech Connect (OSTI)

    Walton, C. D.; Cockcroft, S. [Physics, Department of Physical Sciences, University of Hull, HU6 7RX (United Kingdom)

    2010-10-08T23:59:59.000Z

    We report on laser ablation experiments on micro and nano size composite structures. The surface of CR-39 and polycarbonate has been intentionally seeded with silicon carbide and silver nanowires and subsequently laser irradiated at a wavelength of 157 nm. We show scanning electron micrograph images of prismatic and conical structures produced by laser ablation and discuss a shape transformation from a prismatic to a conical structure.

  13. Table 1 Comparison of potential sub-10 nm III-V device architectures

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Extremely-Thin-Body (ETB) InAs quantum-well (QW) MOSFETs with improved electrostatics down to Lg = 50 nm (SAs channel. The ETB channel does not significantly degrade transport properties as evidenced by gm >1.5 mS/m and vinj = 2.4 107 cm/s. ETB-QW InAs MOSFET with scaled body for Improved Electrostatics T.-W. Kim, D

  14. InGaAsP/InGaP buried heterostructure lasers at 810 nm

    SciTech Connect (OSTI)

    Wakao, K.; Isozumi, S.; Nishi, H.; Ohsaka, S.

    1984-12-01T23:59:59.000Z

    InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 ..mu..m wide.

  15. ALS Ceramics Materials Research Advances Engine Performance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Ceramics Materials Research Advances Engine Performance ALS Ceramics Materials Research Advances Engine Performance Print Thursday, 27 September 2012 00:00 ritchie ceramics...

  16. Toward Rapid Unattended X-ray Tomography of Large Planar Samples at 50-nm Resolution

    SciTech Connect (OSTI)

    Rudati, J.; Tkachuk, A.; Gelb, J.; Hsu, G.; Feng, Y.; Pastrick, R.; Lyon, A.; Trapp, D.; Beetz, T.; Chen, S.; Hornberger, B.; Seshadri, S.; Kamath, S.; Zeng, X.; Feser, M.; Yun, W. [Xradia, Inc., Concord, California (United States); Pianetta, P.; Andrews, J.; Brennan, S. [Stanford Synchrotron Radiation Lightsource, Stanford Linear Accelerator Center, Menlo Park, California (United States); Chu, Y. S. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois (United States)] (and others)

    2009-04-19T23:59:59.000Z

    X-ray tomography at sub-50 nm resolution of small areas ({approx}15 {mu}mx15 {mu}m) are routinely performed with both laboratory and synchrotron sources. Optics and detectors for laboratory systems have been optimized to approach the theoretical efficiency limit. Limited by the availability of relatively low-brightness laboratory X-ray sources, exposure times for 3-D data sets at 50 nm resolution are still many hours up to a full day. However, for bright synchrotron sources, the use of these optimized imaging systems results in extremely short exposure times, approaching live-camera speeds at the Advanced Photon Source at Argonne National Laboratory near Chicago in the US These speeds make it possible to acquire a full tomographic dataset at 50 nm resolution in less than a minute of true X-ray exposure time. However, limits in the control and positioning system lead to large overhead that results in typical exposure times of {approx}15 min currently.We present our work on the reduction and elimination of system overhead and toward complete automation of the data acquisition process. The enhancements underway are primarily to boost the scanning rate, sample positioning speed, and illumination homogeneity to performance levels necessary for unattended tomography of large areas (many mm{sup 2} in size). We present first results on this ongoing project.

  17. ALS Evidence Confirms Combustion Theory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del(ANL-IN-03-032)8Li (59AJ76) (See theDoctoral Fellowship in ResidenceALS EvidenceALS

  18. ALS Evidence Confirms Combustion Theory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItemResearch >InternshipDepartmentNeutrino-Induced1ALS Communications GroupALS

  19. SiO2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility Transistors

    E-Print Network [OSTI]

    Seo, Kwang Seok

    was grown on c-plane sapphire substrate by MOCVD. Undoped 30 nm-thick Al0.26Ga0.74N and Fe-doped 3 m GaN substrate 3 nm undoped GaN 0.26 0.74 Source DrainMain-GateSiO2 2DEG SiO2 SiO2 Additional Gate 5 m3 m3 m 3 mSiO2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility

  20. A nuclear magnetic resonance probe of Fe-Al and Al20V2Eu intermetallics

    E-Print Network [OSTI]

    Chi, Ji

    2009-05-15T23:59:59.000Z

    Al-rich Fe-Al systems (FeAl2, Fe2 Al5 and Fe4Al13) and Al20V2Eu have complicated structures with quasicrystal-like features making these materials potentially of interest for magnetic behavior. However, there is not much work on these materials...

  1. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High

    E-Print Network [OSTI]

    Li, Yat

    Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors, 2006 ABSTRACT We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/ AlN/AlGaN

  2. 785 nm Raman Spectroscopy of CVD Diamond Films Paul William May, James A Smith, and Keith N Rosser

    E-Print Network [OSTI]

    Bristol, University of

    . Here, we report that when using 785 nm excitation, the Raman spectra from thin polycrystalline diamond785 nm Raman Spectroscopy of CVD Diamond Films Paul William May, James A Smith, and Keith N Rosser Raman spectroscopy is a powerful technique often used to study CVD diamond films, however, very little

  3. 785 nm Raman spectroscopy of CVD diamond films P.W. May , J.A. Smith, K.N. Rosser

    E-Print Network [OSTI]

    Bristol, University of

    using 785 nm excitation with 1 µm spot size, the Raman spectra from thin polycrystalline diamond films785 nm Raman spectroscopy of CVD diamond films P.W. May , J.A. Smith, K.N. Rosser School is a powerful technique often used to study CVD diamond films, however, very little work has been reported

  4. Highly efficient Nd:YVO4 laser by direct in-band diode pumping at 914 nm

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Highly efficient Nd:YVO4 laser by direct in-band diode pumping at 914 nm Damien Sangla,1,2 Marc (Doc. ID 109884); published July 9, 2009 A Nd:YVO4 crystal was pumped directly into the emitting level nm for an absorbed pump power of 14.6 W, corresponding to an optical efficiency of 78.7%. We

  5. Damage threshold of inorganic solids under free-electron-laser irradiation at 32.5 nm wavelength

    E-Print Network [OSTI]

    von der Linde, D.

    to the optical components required to utilize XFEL beams, including radiation damage. Theoretical workDamage threshold of inorganic solids under free-electron-laser irradiation at 32.5 nm wavelength SC were exposed to single 25 fs long pulses of 32.5 nm free-electron-laser radiation at fluences of up

  6. A facile method for nickel catalyst immobilization on ultra fine Al{sub 2}O{sub 3} powders

    SciTech Connect (OSTI)

    Zhang, T. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)] [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wen, G., E-mail: wgw@hitwh.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Huang, X.X.; Zhong, B.; Zhang, X.D.; Bai, H.W.; Yu, H.M. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)] [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2010-07-15T23:59:59.000Z

    A pure nickel coating has been successfully plated on the surface of ultra fine Al{sub 2}O{sub 3} particles via a facile electroless plating method. Coating morphology and crystallite size can be tailored by pH values. Dense coating with the maximum crystallite size of 24 nm was obtained at pH 11.0 and porous coating with the minimum crystallite size of 15 nm was obtained at pH value 12.5. The plated powders have been demonstrated to be an effective catalyst for growing boron nitride nanotubes.

  7. Fabrication of Al{sub 2}O{sub 3}-20 vol.% Al nanocomposite powders using high energy milling and their sinterability

    SciTech Connect (OSTI)

    Zawrah, M.F., E-mail: mzawrah@hotmail.com [National Research Center, Ceramics Department (Egypt); Abdel-kader, H.; Elbaly, N.E. [Mechanical Engineering Department, Faculty of Engineering, Helwan University (Egypt)] [Mechanical Engineering Department, Faculty of Engineering, Helwan University (Egypt)

    2012-03-15T23:59:59.000Z

    Highlights: Black-Right-Pointing-Pointer Al{sub 2}O{sub 3}/Al nanocomposite powders were prepared via high energy ball milling. After 20 h milling, the size of Al{sub 2}O{sub 3}-20 vol.% Al nanocomposite particles was in the range of 23-29 nm. A uniform distribution of nanosized Al reinforcement throughout the Al{sub 2}O{sub 3} matrix, coating the particles was successfully obtained. Black-Right-Pointing-Pointer There was no any sign of phase changes during the milling. A competition between the cold welding mechanism and the fracturing mechanism were found during milling and finally the above two mechanisms reached an equilibrium. Black-Right-Pointing-Pointer The highest value of relative density was obtained for the sintered bodies at 1500 Degree-Sign C. Black-Right-Pointing-Pointer The harness of the sintered composite was decreased while the fracture toughness was improved after addition Al into alumina. -- Abstract: In this study, alumina-based matrix nanocomposite powders reinforced with Al particles were fabricated and investigated. The sinterability of the prepared nanocomposite powder at different firing temperature was also conducted. Their mechanical properties in terms of hardness and toughness were tested. Alumina and aluminum powder mixtures were milled in a planetary ball mill for various times up to 30 h in order to produce Al{sub 2}O{sub 3}-20% Al nanocomposite. The phase composition, morphological and microstructural changes during mechanical milling of the nanocomposite particles were characterized by X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope (SEM) techniques, respectively. The crystallite size and internal strain were evaluated by XRD patterns using Scherrer methods. A uniform distribution of the Al reinforcement in the Al{sub 2}O{sub 3} matrix was successfully obtained after milling the powders. The results revealed that there was no any sign of phase changes during the milling. The crystal size decreased with the prolongation of milling times, while the internal strain increased. A simple model is presented to illustrate the mechanical alloying of a ductile-brittle component system. A competition between the cold welding mechanism and the fracturing mechanism were found during powder milling and finally the above two mechanisms reached an equilibrium. The maximum relative density was obtained at 1500 Degree-Sign C. The harness of the sintered composite was decreased while the fracture toughness was improved after addition Al into alumina.

  8. al tratamiento local: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and MEG data (Vigario et al., 1998; Tang et al., 2000a; Vigario et al., 1999, 2000; Wubbeler et al Pearlmutter, Barak 39 Independent Components of...

  9. 1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier

    SciTech Connect (OSTI)

    Nguyen, Ba-Son [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Lin, Jen-Fin [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Perng, Dung-Ching, E-mail: dcperng@ee.ncku.edu.tw [Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)

    2014-02-24T23:59:59.000Z

    We demonstrate the thinnest ever reported Cu diffusion barrier, a 1-nm-thick graphene tri-layer. X-ray diffraction patterns and Raman spectra show that the graphene is thermally stable at up to 750?°C against Cu diffusion. Transmission electron microscopy images show that there was no inter-diffusion in the Cu/graphene/Si structure. Raman analyses indicate that the graphene may have degraded into a nanocrystalline structure at 750?°C. At 800?°C, the perfect carbon structure was damaged, and thus the barrier failed. The results of this study suggest that graphene could be the ultimate Cu interconnect diffusion barrier.

  10. Quantitative analysis of reptation of partially extended DNA in sub-30 nm nanoslits

    E-Print Network [OSTI]

    Yeh, Jia-Wei; Taloni, Alessandro; Chen, Yeng-Long; Chou, Chia-Fu

    2015-01-01T23:59:59.000Z

    We observed reptation of single DNA molecules in fused silica nanoslits of sub-30 nm height. The reptation behavior and the effect of confinement are quantitatively characterized using orientation correlation and transverse fluctuation analysis. We show tube-like polymer motion arises for a tense polymer under strong quasi-2D confinement and interaction with surface- passivating polyvinylpyrrolidone (PVP) molecules in nanoslits, while etching- induced device surface roughness, chip bonding materials and DNA-intercalated dye-surface interaction, play minor roles. These findings have strong implications for the effect of surface modification in nanofluidic systems with potential applications for single molecule DNA analysis.

  11. Light trapping in a 30-nm organic photovoltaic cell for efficient carrier collection and light absorption

    E-Print Network [OSTI]

    Tsai, Cheng-Chia; Banerjee, Ashish; Osgood, Richard M; Englund, Dirk

    2012-01-01T23:59:59.000Z

    We describe surface patterning strategies that permit high photon-collection efficiency together with high carrier-collection efficiency in an ultra-thin planar heterojunction organic photovoltaic cell. Optimized designs reach up to 50% photon collection efficiency in a P3HT layer of only 30 nm, representing a 3- to 5-fold improvement over an unpatterned cell of the same thickness. We compare the enhancement of light confinement in the active layer with an ITO top layer for TE and TM polarized light, and demonstrate that the light absorption can increase by a factor of 2 due to a gap-plasmon mode in the active layer.

  12. Bulk and surface laser damage of silica by picosecond and nanosecond pulses at 1064 nm

    SciTech Connect (OSTI)

    Smith, Arlee V.; Do, Binh T

    2008-09-10T23:59:59.000Z

    We measured bulk and surface dielectric breakdown thresholds of pure silica for 14 ps and 8 ns pulses of 1064 nm light. The thresholds are sharp and reproducible. For the 8 ns pulses the bulk threshold irradiance is 4.75 {+-} 0.25 kW/{mu}m{sup 2}. The threshold is approximately three times higher for 14 ps pulses. For 8 ns pulses the input surface damage threshold can be made equal to the bulk threshold by applying an alumina or silica surface polish.

  13. NM Stat. 62-9 - The Utility Franchise | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer PlantMunhall, Pennsylvania: Energy Resources JumpNEF Advisors LLC JumpNF- Review ofNM Stat.

  14. File:USDA-CE-Production-GIFmaps-NM.pdf | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdf Jump to:ar-80m.pdf Jump to:Originalfaq.pdfFinal.pdfNM.pdf Jump to: navigation,

  15. Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al{sub 2}O{sub 3} films and Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks

    SciTech Connect (OSTI)

    Keuning, W.; Weijer, P. van de; Lifka, H.; Kessels, W. M. M.; Creatore, M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Philips Research Laboratories, High Tech Campus 4, P.O. Box WAG12, 5656 AE Eindhoven (Netherlands); Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

    2012-01-15T23:59:59.000Z

    Al{sub 2}O{sub 3} thin films synthesized by plasma-enhanced atomic layer deposition (ALD) at room temperature (25 deg. C) have been tested as water vapor permeation barriers for organic light emitting diode devices. Silicon nitride films (a-SiN{sub x}:H) deposited by plasma-enhanced chemical vapor deposition served as reference and were used to develop Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks. On the basis of Ca test measurements, a very low intrinsic water vapor transmission rate of {<=} 2 x 10{sup -6} g m{sup -2} day{sup -1} and 4 x 10{sup -6} g m{sup -2} day{sup -1} (20 deg. C/50% relative humidity) were found for 20-40 nm Al{sub 2}O{sub 3} and 300 nm a-SiN{sub x}:H films, respectively. The cathode particle coverage was a factor of 4 better for the Al{sub 2}O{sub 3} films compared to the a-SiN{sub x}:H films and an average of 0.12 defects per cm{sup 2} was obtained for a stack consisting of three barrier layers (Al{sub 2}O{sub 3}/a-SiN{sub x}:H/Al{sub 2}O{sub 3}).

  16. Scott Taylor, ALS Safety Manager

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's PossibleRadiationImplementingnpitcheResearchPhysics LabwildfiresScott Taylor, ALS Safety

  17. OMVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics (title change from A)

    SciTech Connect (OSTI)

    HAN,JUNG; FIGIEL,JEFFREY J.; PETERSEN,GARY A.; MYERS JR.,SAMUEL M.; CRAWFORD,MARY H.; BANAS,MICHAEL ANTHONY; HEARNE,SEAN JOSEPH

    2000-01-18T23:59:59.000Z

    We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GrdnN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

  18. Two-photon laser excitation of trapped 232Th+ ions via the 402 nm resonance line

    E-Print Network [OSTI]

    Herrera-Sancho, O A; Zimmermann, K; Tamm, Chr; Peik, E; Taichenachev, A V; Yudin, V I; Glowacki, P

    2012-01-01T23:59:59.000Z

    Experiments on one- and two-photon laser excitation of 232Th+ ions in a radiofrequency ion trap are reported. As the first excitation step, the strongest resonance line at 402 nm from the 6d^2 7s J=3/2 ground state to the 6d7s7p J=5/2 state at 24874 cm^{-1} is driven by radiation from an extended cavity diode laser. Spontaneous decay of the intermediate state populates a number of low-lying metastable states, thus limiting the excited state population and fluorescence signal obtainable with continuous laser excitation. We study the collisional quenching efficiency of helium, argon, and nitrogen buffer gases, and the effect of repumping laser excitation from the three lowest-lying metastable levels. The experimental results are compared with a four-level rate equation model, that allows us to deduce quenching rates for these buffer gases. Using laser radiation at 399 nm for the second step, we demonstrate two-photon excitation to the state at 49960 cm^{-1}, among the highest-lying classified levels of Th+. Thi...

  19. Study on the oxidation and reduction of tungsten surface for sub-50 nm patterning process

    SciTech Connect (OSTI)

    Kim, Jong Kyu; Nam, Seok Woo; Cho, Sung Il; Jhon, Myung S.; Min, Kyung Suk; Kim, Chan Kyu; Jung, Ho Bum; Yeom, Geun Young [Memory Division Semiconductor Business, Samsung Electronics, San No. 16 Banwol-Ri, Taean-Eup, Hwasung-City, Gyeonggi-Do 449-711, South Korea and Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Memory Division Semiconductor Business, Samsung Electronics, San No. 16 Banwol-Ri, Taean-Eup, Hwasung-City, Gyeonggi-Do 449-711 (Korea, Republic of); Department of Chemical Engineering and Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

    2012-11-15T23:59:59.000Z

    The oxidation characteristics of tungsten line pattern during the carbon-based mask-layer removal process using oxygen plasmas have been investigated for sub-50 nm patterning processes, in addition to the reduction characteristics of the WO{sub x} layer formed on the tungsten line surface using hydrogen plasmas. The surface oxidation of tungsten lines during the mask layer removal process could be minimized by using low-temperature (300 K) plasma processing for the removal of the carbon-based material. Using this technique, the thickness of WO{sub x} on the tungsten line could be decreased to 25% compared to results from high-temperature processing. The WO{sub x} layer could also be completely removed at a low temperature of 300 K using a hydrogen plasma by supplying bias power to the tungsten substrate to provide a activation energy for the reduction. When this oxidation and reduction technique was applied to actual 40-nm-CD device processing, the complete removal of WO{sub x} formed on the sidewall of tungsten line could be observed.

  20. Nonlinear bleaching, absorption, and scattering of 532-nm-irradiated plasmonic nanoparticles

    SciTech Connect (OSTI)

    Liberman, V.; Sworin, M.; Kingsborough, R. P.; Geurtsen, G. P.; Rothschild, M. [Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420 (United States)

    2013-02-07T23:59:59.000Z

    Single-pulse irradiation of Au and Ag suspensions of nanospheres and nanodisks with 532-nm 4-ns pulses has identified complex optical nonlinearities while minimizing material damage. For all materials tested, we observe competition between saturable absorption (SA) and reverse SA (RSA), with RSA behavior dominating for intensities above {approx}50 MW/cm{sup 2}. Due to reduced laser damage in single-pulse experiments, the observed intrinsic nonlinear absorption coefficients are the highest reported to date for Au nanoparticles. We find size dependence to the nonlinear absorption enhancement for Au nanoparticles, peaking in magnitude for 80-nm nanospheres and falling off at larger sizes. The nonlinear absorption coefficients for Au and Ag spheres are comparable in magnitude. On the other hand, the nonlinear absorption for Ag disks, when corrected for volume fraction, is several times higher. These trends in nonlinear absorption are correlated to local electric field enhancement through quasi-static mean-field theory. Through variable size aperture measurements, we also separate nonlinear scattering from nonlinear absorption. For all materials tested, we find that nonlinear scattering is highly directional and that its magnitude is comparable to that of nonlinear absorption. These results indicate methods to improve the efficacy of plasmonic nanoparticles as optical limiters in pulsed laser systems.

  1. Electron density distribution and disordered crystal structure of 15R-SiAlON, SiAl{sub 4}O{sub 2}N{sub 4}

    SciTech Connect (OSTI)

    Banno, Hiroki; Hanai, Takaaki; Asaka, Toru [Department of Materials Science and Engineering, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Kimoto, Koji [Advanced Key Technologies Division, National Institute for Materials Science, Tsukuba 305-0044 (Japan); Fukuda, Koichiro, E-mail: fukuda.koichiro@nitech.ac.jp [Department of Materials Science and Engineering, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)

    2014-03-15T23:59:59.000Z

    The crystal structure of SiAl{sub 4}O{sub 2}N{sub 4} was characterized by laboratory X-ray powder diffraction (CuK?{sub 1}). The title compound is trigonal with space group R3-bar m. The hexagonal unit-cell dimensions (Z=3) are a=0.301332(3) nm, c=4.18616(4) nm and V=0.3291825(5) nm{sup 3}. The initial structural model was successfully derived by the charge-flipping method and further refined by the Rietveld method. The final structural model showed the positional disordering of one of the three (Si,Al) sites. The maximum-entropy method-based pattern fitting (MPF) method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensity partitioning was minimized. The reliability indices calculated from the MPF were R{sub wp}=5.05%, S (=R{sub wp}/R{sub e})=1.21, R{sub p}=3.77%, R{sub B}=1.29% and R{sub F}=1.01%. The disordered crystal structure was successfully described by overlapping three types of domains with ordered atom arrangements. The distribution of atomic positions in one of the three types of domains can be achieved in the space group R3-bar m. The atom arrangements in the other two types of domains are noncentrosymmetrical with the space group R3m. These two structural configurations are related by the pseudo-symmetry inversion. -- Graphical abstract: A bird's eye view of electron densities up to 75.3% (0.133 nm{sup ?3}) of the maximum on the plane parallel to (110) with the corresponding atomic arrangements of SiAl{sub 4}O{sub 2}N{sub 4}. Highlights: • Crystal structure of SiAl{sub 4}O{sub 2}N{sub 4} is determined by laboratory X-ray powder diffraction. • The atom arrangements are represented by the split-atom model. • The maximum-entropy method-based pattern fitting method is used to confirm the validity of the model. • The disordered structure is described by overlapping three types of domains with ordered atom arrangements.

  2. Enhanced performance of graphite anode materials by AlF3 coating for lithium-ion batteries

    SciTech Connect (OSTI)

    Ding, Fei; Xu, Wu; Choi, Daiwon; Wang, Wei; Li, Xiaolin; Engelhard, Mark H.; Chen, Xilin; Yang, Zhenguo; Zhang, Jiguang

    2012-04-27T23:59:59.000Z

    In order to form the stable surface film and to further enhance the long-term cycling stability of the graphite anodes of lithium-ion batteries, the surface of graphite powders has been modified by AlF3 coating through chemical precipitation method. The AlF3-coated graphite shows no evident changes in the bulk structure and a thin AlF3-coating layer of about 2 nm thick is found to uniformly cover the graphite particles with 2 wt% AlF3 content. However, it delivers a higher initial discharge capacity and largely improved rate performances compared to the pristine graphite. Remarkably, AlF3 coated graphite demonstrated a much better cycle life. After 300 cycles, AlF3 coated graphite and uncoated graphite show capacity retention of 92% and 81%, respectively. XPS measurement shows that a more conductive solid electrode interface (SEI) layer was formed on AlF3 coated graphite as compared to uncoated graphite. SEM monograph also reveals that the AlF3-coated graphite particles have a much more stable surface morphology after long-term cycling. Therefore, the improved electrochemical performance of AlF3 coated graphite can be attributed to a more stable and conductive SEI formed on coated graphite anode during cycling process.

  3. Atom probe tomography studies of Al?O? gate dielectrics on GaN

    SciTech Connect (OSTI)

    Mazumder, Baishakhi, E-mail: bmazumder@engineering.ucsb.edu; Wu, Feng; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Liu, Xiang; Yeluri, Ramya; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2014-10-07T23:59:59.000Z

    Atom probe tomography was used to achieve three-dimensional characterization of in situ Al?O?/GaN structures grown by metal organic chemical vapor deposition (MOCVD). Al?O? dielectrics grown at three different temperatures of 700, 900, and 1000 °C were analyzed and compared. A low temperature GaN cap layer grown atop Al?O? enabled a high success rate in the atom probe experiments. The Al?O?/GaN interfaces were found to be intermixed with Ga, N, and O over the distance of a few nm. Impurity measurements data showed that the 1000 °C sample contains higher amounts of C (4 × 10¹?/cm³) and lower amounts of H (7 × 10¹?/cm³), whereas the 700 °C sample exhibits lower C impurities (<10¹?/cm³) and higher H incorporation (2.2 × 10²?/cm³). On comparing with Al?O? grown by atomic layer deposition (ALD), it was found that the MOCVD Al?O?/GaN interface is comparatively abrupt. Scanning transmission electron microscopy data showed that the 900 °C and 1000 °C MOCVD films exhibit polycrystalline nature, while the ALD films were found to be amorphous.

  4. Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates

    SciTech Connect (OSTI)

    Trindade, A. J., E-mail: antonio.trindade@strath.ac.uk; Guilhabert, B.; Massoubre, D.; Laurand, N.; Gu, E.; Watson, I. M.; Dawson, M. D. [Institute of Photonics, SUPA, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW (United Kingdom)] [Institute of Photonics, SUPA, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW (United Kingdom); Zhu, D.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2013-12-16T23:59:59.000Z

    The transfer printing of 2 ?m-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150?nm (±14?nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486?nm with a forward-directed optical output power up to 80??W (355 mW/cm{sup 2}) when operated at a current density of 20?A/cm{sup 2}.

  5. AL2007-03.doc

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy China 2015ofDepartmentDepartment of Energy-ChapterDepartment6-04v2.pdf MoreAL 2007-03

  6. AL2007-05.doc

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy China 2015ofDepartmentDepartment of Energy-ChapterDepartment6-04v2.pdf MoreAL7-05

  7. ALS 20th Anniversary Celebration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del(ANL-IN-03-032)8Li (59AJ76) (See the EnergyTAMANG, APIL.AFTFutureALPES20thALS 20th

  8. ALS Evidence Confirms Combustion Theory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del(ANL-IN-03-032)8Li (59AJ76) (See theDoctoral Fellowship in ResidenceALS Evidence

  9. ALS Evidence Confirms Combustion Theory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del(ANL-IN-03-032)8Li (59AJ76) (See theDoctoral Fellowship in ResidenceALS

  10. ALS Scientific Advisory Committee Charter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del(ANL-IN-03-032)8Li (59AJ76) (See theDoctoral Fellowship inALS Reveals NewScientific

  11. ALS Scientific Advisory Committee Charter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del(ANL-IN-03-032)8Li (59AJ76) (See theDoctoral Fellowship inALS Reveals

  12. ALS Scientific Advisory Committee Charter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del(ANL-IN-03-032)8Li (59AJ76) (See theDoctoral Fellowship inALS RevealsScientific

  13. AL PRO | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof Energy 2,AUDIT REPORT Americium/Curium Vitrification4th Day EnergyADAPTItalyAL PRO

  14. 2012 ALS User Meeting Awards

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItemResearch >InternshipDepartment ofAugust 2011October 2012 Thu, 10/04/20122 ALS User

  15. 2012 ALS User Meeting Awards

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItemResearch >InternshipDepartment ofAugust 2011October 2012 Thu, 10/04/20122 ALS

  16. ALS Doctoral Fellowship in Residence

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItemResearch >InternshipDepartmentNeutrino-Induced1ALS Communications Group

  17. ALS Evidence Confirms Combustion Theory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItemResearch >InternshipDepartmentNeutrino-Induced1ALS Communications GroupALSALS

  18. Al Geist | ornl.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisiting the TWP TWP RelatedCellulase C. bescii CelA, adefault Sign InLeaksGreenAl

  19. EA-1906: Operations, Consolidation, and Upgrades at the Office of Secure Transportation Western Command Site, Albuquerque, NM

    Broader source: Energy.gov [DOE]

    This EA evaluates environmental impacts associated with the siting and construction of several proposed buildings, including a new vehicle maintenance facility and mobile equipment maintenance building (and their support structures) at the Western Command Site, Albuquerque, NM.

  20. High-order harmonic generation in atomic hydrogen at 248 nm: Dipole-moment versus acceleration spectrum

    E-Print Network [OSTI]

    Jiang, Tsin-Fu; Chu, Shih-I

    1992-12-01T23:59:59.000Z

    We present a study of the high-order harmonic-generation (HG) spectra of atomic hydrogen at 248 nm based on the Fourier transform of the expectation values of the induced dipole moment and acceleration. The calculations ...

  1. Proceedings of the American Solar Energy Society Solar 98 Conference Albuquerque, NM (June 1998): 231-237.

    E-Print Network [OSTI]

    Delaware, University of

    Proceedings of the American Solar Energy Society Solar 98 Conference Albuquerque, NM (June 1998 technologies, like photovoltaics (PV), can offer additional benefits to electric utility companies utility company to defer investments in upgrading transmission and distribution facilities, among other

  2. 34 OPTICS LETTERS / Vol. 22, No. 1 / January 1, 1997 Intense plasma discharge source at 13.5 nm for

    E-Print Network [OSTI]

    Rocca, Jorge J.

    and Education in Optics and Lasers, University of Central Florida, Orlando, Florida 32816-2700 J. J. Rocca The f lux emitted at 13.5 nm by a lithium plasma within the bandwidth of multilayer op- tics

  3. Nanosecond-laser-induced damage in potassium titanyl phosphate: pure 532 nm pumping and frequency conversion situations

    SciTech Connect (OSTI)

    Wagner, Frank R.; Hildenbrand, Anne; Natoli, Jean-Yves; Commandre, Mireille

    2011-08-01T23:59:59.000Z

    Nanosecond-laser-induced damage measurements in the bulk of KTiOPO{sub 4} (KTP) crystals are reported using incident 532 nm light or using incident 1064 nm light, which pumps more or less efficient second harmonic generation. No damage threshold fatigue effect is observed with pure 532 nm irradiation. The damage threshold of Z-polarized light is higher than the one for X- or Y-polarized light. During frequency doubling, the damage threshold was found to be lower than for pure 1064 or 532 nm irradiation. More data to quantify the cooperative damage mechanism were generated by performing fluence ramp experiments with varying conditions and monitoring the conversion efficiency. All damage thresholds plotted against the conversion efficiency align close to a characteristic curve.

  4. Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors

    SciTech Connect (OSTI)

    Lu, Jing, E-mail: jing@ece.ucsb.edu; Zheng, Xun; Guidry, Matthew; Denninghoff, Dan; Ahmadi, Elahe; Lal, Shalini; Keller, Stacia; Mishra, Umesh K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); DenBaars, Steven P. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-03-03T23:59:59.000Z

    Scaling down the channel-thickness (t{sub ch}) in GaN/(In, Al, Ga)N high-electron-mobility-transistors (HEMTs) is essential to eliminating short-channel effects in sub 100?nm gate length HEMTs. However, this scaling can degrade both charge density (n{sub s}) and mobility (?), thereby reducing channel-conductivity. In this study, the back-barrier design in N-polar GaN/(In, Al, Ga)N was engineered to achieve highly conductive-channels with t{sub ch}?nm using metal organic chemical vapor deposition. Compositional-grading was found to be the most effective approach in reducing channel-conductivity for structures with t{sub ch}???3-nm. For a HEMT with 3-nm-thick-channel, a sheet-resistance of 329 ?/? and a peak-transconductance of 718 mS/mm were demonstrated.

  5. Ytterbium-doped fibre laser tunable in the range 1017 - 1040 nm with second-harmonic generation

    SciTech Connect (OSTI)

    Dontsova, E I; Kablukov, S I; Babin, Sergei A

    2013-05-31T23:59:59.000Z

    A cladding-pumped ytterbium-doped fibre laser has been tuned to shorter emission wavelengths (from 1040 to 1017 nm). The laser output power obtained has been compared to calculation results. We have studied frequency doubling of the laser in a KTiOPO{sub 4} (KTP) crystal with type II phase matching in the XY plane and demonstrated wavelength tuning in the range 510 - 520 nm. (lasers)

  6. Frequency doubling and sum-frequency mixing operation at 469.2, 471, and 473 nm in Nd:YAG

    E-Print Network [OSTI]

    Boyer, Edmond

    at around 445, 469, or 479 nm are required to pump these Pr3-doped laser hosts [8­13]. Gal- lium nitride (GaN decades for different applications [1­4] such as la- ser remote sensing (differential absorption LIDAR to an absorption band of Pr3 [14]. For that purpose the laser has to work on the 938.5 nm transition line of Nd

  7. Efficient 13.5 nm extreme ultraviolet emission from Sn plasma irradiated by a long CO2 laser pulse

    E-Print Network [OSTI]

    Najmabadi, Farrokh

    Efficient 13.5 nm extreme ultraviolet emission from Sn plasma irradiated by a long CO2 laser pulse-band 2% bandwidth conversion efficiency CE from a CO2 laser to 13.5 nm extreme ultraviolet EUV light was investigated for Sn plasma. It was found that high in-band CE, 2.6%, is consistently obtained using a CO2 laser

  8. April 27, 2015-Special ALS Colloquium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    April 27, 2015-Special ALS Colloquium Print Special Event on Monday, April 27 @ 12 noon, USB 15-253 X-Ray Microscopy: The First 120 Years Janos Kirz, ALS Abstract Rntgen's great...

  9. April 27, 2015-Special ALS Colloquium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    April 27, 2015-Special ALS Colloquium April 27, 2015-Special ALS Colloquium Print Wednesday, 22 April 2015 13:19 Special Event on Monday, April 27 @ 12 noon, USB 15-253 X-Ray...

  10. United States Patent [19] Church et al.

    E-Print Network [OSTI]

    Church, George M.

    United States Patent [19] Church et al. [54] CHARACTERIZATION OF INDIVIDUAL POLYMER MOLECULES BASED 1111111111111111111111111111111111111111111111111111111111111 US005795782A [11] Patent Number: [45] Date of Patent: 5,795,782 Aug. 18, 1998 Boulanger et al

  11. Structural distortions in 5-10 nm silver nanoparticles under high pressure

    SciTech Connect (OSTI)

    Koski, Kristie J.; Kamp, Noelle M.; Kunz, Martin; Knight, Jason K.; Alivisatos, A.P.; Smith, R.K.

    2008-10-13T23:59:59.000Z

    We present experimental evidence that silver nanoparticles in the size range of 5-10 nm undergo a reversible structural transformation under hydrostatic pressures up to 10 GPa. We have used x-ray diffraction with a synchrotron light source to investigate pressure-dependent and size-dependent trends in the crystal structure of silver nanoparticles in a hydrostatic medium compressed in a diamond-anvil cell. Results suggest a reversible linear pressure-dependent rhombohedral distortion which has not been previously observed in bulk silver. We propose a mechanism for this transition that considers the bond-length distribution in idealized multiply twinned icosahedral particles. To further support this hypothesis, we also show that similar measurements of single-crystal platinum nanoparticles reveal no such distortions.

  12. Dense wavelength multiplexing of 1550 nm QKD with strong classical channels in reconfigurable networking environments

    SciTech Connect (OSTI)

    Rosenberg, Danna [Los Alamos National Laboratory; Peterson, Charles G [Los Alamos National Laboratory; Dallmann, Nicholas [Los Alamos National Laboratory; Hughes, Richard J [Los Alamos National Laboratory; Mccabe, Kevin P [Los Alamos National Laboratory; Nordholt, Jane E [Los Alamos National Laboratory; Tyagi, Hush T [Los Alamos National Laboratory; Peters, Nicholas A [TELCORDIA TECHNOLOGIES; Toliver, Paul [TELCORDIA TECHNOLOGIES; Chapman, Thomas E [TELCORDIA TECHNOLOGIES; Runser, Robert J [TELCORDIA TECHNOLOGIES; Mcnown, Scott R [TELCORDIA TECHNOLOGIES

    2008-01-01T23:59:59.000Z

    To move beyond dedicated links and networks, quantum communications signals must be integrated into networks carrying classical optical channels at power levels many orders of magnitude higher than the quantum signals themselves. We demonstrate transmission of a 1550-nm quantum channel with up to two simultaneous 200-GHz spaced classical telecom channels, using ROADM (reconfigurable optical <1dd drop multiplexer) technology for multiplexing and routing quantum and classical signals. The quantum channel is used to perform quantum key distribution (QKD) in the presence of noise generated as a by-product of the co-propagation of classical channels. We demonstrate that the dominant noise mechanism can arise from either four-wave mixing or spontaneous Raman scattering, depending on the optical path characteristics as well <1S the classical channel parameters. We quantity these impairments and discuss mitigation strategies.

  13. Optical-fiber source of polarization-entangled photon pairs in the 1550nm telecom band

    E-Print Network [OSTI]

    Xiaoying Li; Paul L. Voss; Jay E. Sharping; Prem Kumar

    2004-08-12T23:59:59.000Z

    We present a fiber based source of polarization-entangled photon pairs that is well suited for quantum communication applications in the 1550nm band of standard fiber-optic telecommunications. Polarization entanglement is created by pumping a nonlinear-fiber Sagnac interferometer with two time-delayed orthogonally-polarized pump pulses and subsequently removing the time distinguishability by passing the parametrically scattered signal-idler photon pairs through a piece of birefringent fiber. Coincidence detection of the signal-idler photons yields biphoton interference with visibility greater than 90%, while no interference is observed in direct detection of either the signal or the idler photons. All four Bell states can be prepared with our setup and we demonstrate violations of CHSH form of Bell's inequalities by up to 10 standard deviations of measurement uncertainty.

  14. Pedestrian and traffic safety in parking lots at SNL/NM : audit background report.

    SciTech Connect (OSTI)

    Sanchez, Paul Ernest

    2009-03-01T23:59:59.000Z

    This report supplements audit 2008-E-0009, conducted by the ES&H, Quality, Safeguards & Security Audits Department, 12870, during fall and winter of FY 2008. The study evaluates slips, trips and falls, the leading cause of reportable injuries at Sandia. In 2007, almost half of over 100 of such incidents occurred in parking lots. During the course of the audit, over 5000 observations were collected in 10 parking lots across SNL/NM. Based on benchmarks and trends of pedestrian behavior, the report proposes pedestrian-friendly features and attributes to improve pedestrian safety in parking lots. Less safe pedestrian behavior is associated with older parking lots lacking pedestrian-friendly features and attributes, like those for buildings 823, 887 and 811. Conversely, safer pedestrian behavior is associated with newer parking lots that have designated walkways, intra-lot walkways and sidewalks. Observations also revealed that motorists are in widespread noncompliance with parking lot speed limits and stop signs and markers.

  15. Oxygen in Galactic Disk Stars: non-LTE abundances from the 777 nm O I triplet

    E-Print Network [OSTI]

    I. Ramirez; C. Allende Prieto; D. L. Lambert

    2005-06-29T23:59:59.000Z

    Oxygen abundances for a large sample of dwarf and giant stars kinematically selected to be part of the Galactic thin and thick disks have been determined from a non-LTE analysis of the O I triplet lines at 777 nm. The abundance analysis was performed using the infrared flux method temperature scale, trigonometric surface gravities, and accurate atomic data. Within this framework, the ionization balance of iron lines could not be satisfied and so we adopted the iron abundances from Fe II lines only given that they are relatively less sensitive to changes in the atmospheric parameters. We show the resulting [O/Fe] vs. [Fe/H] relationship and briefly discuss its implications.

  16. Nanofiltration of Electrolyte Solutions by Sub-2nm Carbon Nanotube Membranes

    SciTech Connect (OSTI)

    Fornasiero, F; Park, H G; Holt, J K; Stadermann, M; Kim, S; In, J B; Grigoropoulos, C P; Noy, A; Bakajin, O

    2008-03-13T23:59:59.000Z

    Both MD simulations and experimental studies have shown that liquid and gas flow through carbon nanotubes with nanometer size diameter is exceptionally fast. For applications in separation technology, selectivity is required together with fast flow. In this work, we use pressure-driven filtration experiments to study ion exclusion in silicon nitride/sub-2-nm CNT composite membranes as a function of solution ionic strength, pH, and ion valence. We show that carbon nanotube membranes exhibit significant ion exclusion at low salt concentration. Our results support a rejection mechanism dominated by electrostatic interactions between fixed membrane charges and mobile ions, while steric and hydrodynamic effects appear to be less important. Comparison with commercial nanofiltration membranes for water softening reveals that our carbon nanotube membranes provides far superior water fluxes for similar ion rejection capabilities.

  17. (12) United States Patent Vertes et al.

    E-Print Network [OSTI]

    Vertes, Akos

    (12) United States Patent Vertes et al. (54) NANOPHOTONIC PRODUCTION, MODULATION AND SWITCHING to any disclaimer, the term ofthis patent is extended or adjusted under 35 U.S.c. 154(b) by 194 days. (21) References Cited U.S. PATENT DOCUMENTS 200910236512 Al * 912009 Naya et al. .................... 250/281 2009

  18. United States Patent [19] Miura et al.

    E-Print Network [OSTI]

    Shelnutt, John A.

    of Pyrrole--3,4--diacetic Acid and Its Derivatives", Synthesis, pp. 262--265 (1989). Coderre et al., "Boron/1992 OTHER PUBLICATIONS Japan . Japan . WIPO . WIPO . Miura et al.,, "Synthesis, Tissue Uptake, and Toxicity Therapy for Cancer, Kobe, Japan (Oct. 31--Nov. 4, 1994). Miura et al., "Synthesis and Spectroscopic

  19. In situ transmission electron microscopy investigation of the interfacial reaction between Ni and Al during rapid heating in a nanocalorimeter

    SciTech Connect (OSTI)

    Grapes, Michael D., E-mail: mgrapes1@jhu.edu, E-mail: david.lavan@nist.gov, E-mail: weihs@jhu.edu [Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Material Measurement Laboratory, Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); LaGrange, Thomas; Reed, Bryan W.; Campbell, Geoffrey H. [Lawrence Livermore National Laboratory, Materials Science and Technology Division, Livermore, California 94550 (United States); Woll, Karsten [Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Institute of Applied Materials, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen (Germany); LaVan, David A., E-mail: mgrapes1@jhu.edu, E-mail: david.lavan@nist.gov, E-mail: weihs@jhu.edu [Material Measurement Laboratory, Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Weihs, Timothy P., E-mail: mgrapes1@jhu.edu, E-mail: david.lavan@nist.gov, E-mail: weihs@jhu.edu [Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States)

    2014-11-01T23:59:59.000Z

    The Al/Ni formation reaction is highly exothermic and of both scientific and technological significance. In this report, we study the evolution of intermetallic phases in this reaction at a heating rate of 830 K/s. 100-nm-thick Al/Ni bilayers were deposited onto nanocalorimeter sensors that enable the measurement of temperature and heat flow during rapid heating. Time-resolved transmission electron diffraction patterns captured simultaneously with thermal measurements allow us to identify the intermetallic phases present and reconstruct the phase transformation sequence as a function of time and temperature. The results show a mostly unaltered phase transformation sequence compared to lower heating rates.

  20. TEM study of {beta} Prime precipitate interaction mechanisms with dislocations and {beta} Prime interfaces with the aluminium matrix in Al-Mg-Si alloys

    SciTech Connect (OSTI)

    Teichmann, Katharina [Norwegian University of Science and Technology, Trondheim (Norway)] [Norwegian University of Science and Technology, Trondheim (Norway); Marioara, Calin D.; Andersen, Sigmund J. [SINTEF Materials and Chemistry, Trondheim (Norway)] [SINTEF Materials and Chemistry, Trondheim (Norway); Marthinsen, Knut, E-mail: knut.marthinsen@material.ntnu.no [Norwegian University of Science and Technology, Trondheim (Norway)] [Norwegian University of Science and Technology, Trondheim (Norway)

    2013-01-15T23:59:59.000Z

    The interaction mechanisms between dislocations and semi-coherent, needle-shaped {beta} Prime precipitates in Al-Mg-Si alloys have been studied by High Resolution Transmission Electron Microscopy (HRTEM). Dislocation loops appearing as broad contrast rings around the precipitate cross-sections were identified in the Al matrix. A size dependency of the interaction mechanism was observed; the precipitates were sheared when the longest dimension of their cross-section was shorter than approximately 15 nm, and looped otherwise. A more narrow ring located between the Al matrix and bulk {beta} Prime indicates the presence of a transition interface layer. Together with the bulk {beta} Prime structure, this was further investigated by High Angle Annular Dark Field Scanning TEM (HAADF-STEM). In the bulk {beta} Prime a higher intensity could be correlated with a third of the Si-columns, as predicted from the published structure. The transition layer incorporates Si columns in the same arrangement as in bulk {beta} Prime , although it is structurally distinct from it. The Z-contrast information and arrangement of these Si-columns demonstrate that they are an extension of the Si-network known to structurally connect all the precipitate phases in the Al-Mg-Si(-Cu) system. The width of the interface layer was estimated to about 1 nm. - Highlights: Black-Right-Pointing-Pointer {beta} Prime is found to be looped at sizes larger than 15 nm (cross section diameter). Black-Right-Pointing-Pointer {beta} Prime is found to be sheared at sizes smaller than 15 nm (cross section diameter). Black-Right-Pointing-Pointer The recently determined crystal structure of {beta} Prime is confirmed by HAADF-STEM. Black-Right-Pointing-Pointer Between {beta} Prime and the Al-matrix a transition layer of about 1 nm is existent. Black-Right-Pointing-Pointer The {beta} Prime /matrix layer is structurally distinct from bulk {beta} Prime and the aluminium matrix.

  1. Structure of multilayered Cr(Al)N/SiO{sub x} nanocomposite coatings fabricated by differential pumping co-sputtering

    SciTech Connect (OSTI)

    Kawasaki, Masahiro [JEOL USA Inc., 11 Dearborn Road, Peabody, Massachusetts 01960 (United States)] [JEOL USA Inc., 11 Dearborn Road, Peabody, Massachusetts 01960 (United States); Nose, Masateru [Faculty of Art and Design, University of Toyama, 180 Futagami-machi, Takaoka 933-8588 (Japan)] [Faculty of Art and Design, University of Toyama, 180 Futagami-machi, Takaoka 933-8588 (Japan); Onishi, Ichiro [JEOL Ltd. 3-1-2 Musashino, Akishima, Tokyo 196-8558 (Japan)] [JEOL Ltd. 3-1-2 Musashino, Akishima, Tokyo 196-8558 (Japan); Shiojiri, Makoto [Kyoto Institute of Technology, Kyoto 606-8585 (Japan)] [Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

    2013-11-11T23:59:59.000Z

    A Cr(Al)N/38 vol. % SiO{sub x} hard coating was prepared on a (001) Si substrate at 250 °C in a differential pumping co-sputtering system, which has two chambers for radio frequency (RF) sputtering and a substrate holder rotating on the chambers. The composite coating was grown by alternate sputter-depositions from CrAl and SiO{sub 2} targets with flows of N{sub 2}+Ar and Ar at RF powers of 200 and 75 W, respectively, on transition layers grown on the substrate. Analytical electron microscopy reveled that the Cr(Al)N/SiO{sub x} coating had a multilayered structure of Cr(Al)N crystal layers ?1.6 nm thick and two-dimensionally dispersed amorphous silicon oxide (a-SiO{sub x}) particles with sizes of ?1 nm or less. The a-SiO{sub x} particles were enclosed with the Cr(Al)N layers. The coating had a low indentation hardness of ?25 GPa at room temperature, due to a high oxide fraction of 38 vol. % and a low substrate rotational speed of 1 rpm. Faster rotation and lower oxide fraction would make a-SiO{sub x} particles smaller, resulting in the formation of Cr(Al)N crystal including the very fine a-SiO{sub x} particles with small number density. They would work as obstacles for the lattice deformation of the Cr(Al)N crystals. We have fabricated a superhard coating of Cr(Al)N/17 vol. % SiO{sub x} with a hardness of 46 GPa prepared at 12 rpm.

  2. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

    SciTech Connect (OSTI)

    Nepal, N.; Qadri, S. B.; Hite, J. K.; Mahadik, N. A.; Mastro, M. A.; Eddy, C. R. Jr. [U.S. Naval Research Laboratory, Washington, DC 20375 (United States)] [U.S. Naval Research Laboratory, Washington, DC 20375 (United States)

    2013-08-19T23:59:59.000Z

    Thin AlN layers were grown at 200–650 °C by plasma assisted atomic layer epitaxy (PA-ALE) simultaneously on Si(111), sapphire (1120), and GaN/sapphire substrates. The AlN growth on Si(111) is self-limited for trimethyaluminum (TMA) pulse of length > 0.04 s, using a 10 s purge. However, the AlN nucleation on GaN/sapphire is non-uniform and has a bimodal island size distribution for TMA pulse of ?0.03 s. The growth rate (GR) remains almost constant for T{sub g} between 300 and 400 °C indicating ALE mode at those temperatures. The GR is increased by 20% at T{sub g} = 500 °C. Spectroscopic ellipsometry (SE) measurement shows that the ALE AlN layers grown at T{sub g} ? 400 °C have no clear band edge related features, however, the theoretically estimated band gap of 6.2 eV was measured for AlN grown at T{sub g} ? 500 °C. X-ray diffraction measurements on 37 nm thick AlN films grown at optimized growth conditions (T{sub g} = 500 °C, 10 s purge, 0.06 s TMA pulse) reveal that the ALE AlN on GaN/sapphire is (0002) oriented with rocking curve full width at the half maximum (FWHM) of 670 arc sec. Epitaxial growth of crystalline AlN layers by PA-ALE at low temperatures broadens application of the material in the technologies that require large area conformal growth at low temperatures with thickness control at the atomic scale.

  3. ccsd00001116 Nucleation of Al 3 Zr and Al 3 Sc in aluminum alloys

    E-Print Network [OSTI]

    ccsd­00001116 (version 1) : 4 Feb 2004 Nucleation of Al 3 Zr and Al 3 Sc in aluminum alloys: from 4, 2004) Zr and Sc precipitate in aluminum alloys to form the compounds Al3Zr and Al3Sc which

  4. Dynamics and manipulation of the dominant 13.5 nm in-band extreme ultraviolet emitting region of laser-produced Sn plasmas

    E-Print Network [OSTI]

    Yuspeh, Samuel Edward

    2011-01-01T23:59:59.000Z

    manufacturing (HVM) of semiconductor microchips with nodes 32 nm and below is extreme ultraviolet (EUV) lithography using laser

  5. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

    SciTech Connect (OSTI)

    Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Meyer, David J.; Bass, Robert; Binari, Steven C. [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375-5347 (United States); Gougousi, Theodosia [Physics Department, University of Maryland Baltimore County, Baltimore, Maryland 21250 (United States); Evans, Keith R. [Kyma Technologies, Raleigh, North Carolina 27617 (United States)

    2014-09-01T23:59:59.000Z

    A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6?nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700?cm{sup 2}/V s and sheet resistance of 130 ?/? for a 3?nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.

  6. Activated Al/Al{sub 2}O{sub 3} for transformation of chlorinated hydrocarbons

    SciTech Connect (OSTI)

    Lien, H.L.; Zhang, W.X.

    1999-07-01T23:59:59.000Z

    A method for the preparation of activated Al/Al{sub 2}O{sub 3} mixture has been developed in the laboratory. Al and Al{sub 2}O{sub 3} are infused and activated within an alkaline solution. Optimal Al to Al{sub 2}O{sub 3} ratio is in the range of 0.1 to 1. Batch experiments have demonstrated that the activated Al/Al{sub 2}O{sub 3} mixture can rapidly dechlorinate tetrachloroethylene (PCE), carbon tetrachloride (CT) and hexachlorobenzene (HCB). Due to the high reactivity, light density and low cost, the activated Al/Al{sub 2}O{sub 3} may be used as a remediation agent in ex-situ treatment of industrial effluent, in-situ treatment wall, and for direct injection into ground water.

  7. Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying

    SciTech Connect (OSTI)

    Canulescu, S., E-mail: stec@fotonik.dtu.dk; Schou, J. [Department of Photonics Engineering, Technical University of Denmark, 4000 Roskilde (Denmark); Rechendorff, K.; Pleth Nielsen, L. [Danish Technological Institute, Kongsvang Alle 29, 8000 Aarhus (Denmark); Borca, C. N. [Paul Scherrer Institute, 5232 Villigen (Switzerland); Jones, N. C.; Hoffmann, S. V. [ISA, Department of Physics and Astronomy, Aarhus University, 8000 Aarhus (Denmark); Bordo, K.; Ambat, R. [Department of Mechanical Engineering, Technical University of Denmark, 2800 Kongens Lyngby (Denmark)

    2014-03-24T23:59:59.000Z

    The band structure of pure and Ti-alloyed anodic aluminum oxide has been examined as a function of Ti concentration varying from 2 to 20 at.?%. The band gap energy of Ti-alloyed anodic Al oxide decreases with increasing Ti concentration. X-ray absorption spectroscopy reveals that Ti atoms are not located in a TiO{sub 2} unit in the oxide layer, but rather in a mixed Ti-Al oxide layer. The optical band gap energy of the anodic oxide layers was determined by vacuum ultraviolet spectroscopy in the energy range from 4.1 to 9.2?eV (300–135?nm). The results indicate that amorphous anodic Al{sub 2}O{sub 3} has a direct band gap of 7.3?eV, which is about ?1.4?eV lower than its crystalline counterpart (single-crystal Al{sub 2}O{sub 3}). Upon Ti-alloying, extra bands appear within the band gap of amorphous Al{sub 2}O{sub 3}, mainly caused by Ti 3d orbitals localized at the Ti site.

  8. Page 312 Courses: Environmental Studies and Planning (ENSP) Sonoma State University 2012-2013 Catalog ENSP 306 ENviroNmENtal EthicS (3)

    E-Print Network [OSTI]

    Ravikumar, B.

    -2013 Catalog ENSP 306 ENviroNmENtal EthicS (3) An examination of philosophical issues; concepts of extending and Critical Thinking). ENSP 307 ENviroNmENtal hiStory (4) History of the American environment and the ways). ENSP 308 ENviroNmENtal litEraturE (3) A survey of great American environmental books, including H. D

  9. Isotopic Analysis At Zuni Mountains Nm Area (Brookins, 1982) | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetecGtelInterias Solar Energy JumpIremNot2007) || Open EnergyAl.,

  10. A Multi-chain Measurements Averaging TDC Implemented in a 40 nm FPGA

    E-Print Network [OSTI]

    Qi Shen; Shubin Liu; Binxiang Qi; Qi An; Shengkai Liao; Chengzhi Peng; Weiyue Liu

    2014-06-15T23:59:59.000Z

    A high precision and high resolution time-to-digital converter (TDC) implemented in a 40 nm fabrication process Virtex-6 FPGA is presented in this paper. The multi-chain measurements averaging architecture is used to overcome the resolution limitation determined by intrinsic cell delay of the plain single tapped-delay chain. The resolution and precision are both improved with this architecture. In such a TDC, the input signal is connected to multiple tapped-delay chains simultaneously (the chain number is M), and there is a fixed delay cell between every two adjacent chains. Each tapped-delay chain is just a plain TDC and should generate a TDC time for a hit input signal, so totally M TDC time values should be got for a hit signal. After averaging, the final TDC time is obtained. A TDC with 3 ps resolution (i.e. bin size) and 6.5 ps precision (i.e. RMS) has been implemented using 8 parallel tapped-delay chains. Meanwhile the plain TDC with single tapped-delay chain yields 24 ps resolution and 18 ps precision.

  11. Detonation wave profiles measured in plastic bonded explosives using 1550 nm photon doppler velocimetry (PDV)

    SciTech Connect (OSTI)

    Gustavsen, Richard L [Los Alamos National Laboratory; Bartram, Brian D [Los Alamos National Laboratory; Sanchez, Nathaniel (nate) J [Los Alamos National Laboratory

    2009-01-01T23:59:59.000Z

    We present detonation wave profiles measured in two TATB based explosives and two HMX based explosives. Profiles were measured at the interface of the explosive and a Lithium-Fluoride (LiF) window using 1550 nm Photon Doppler Velocimetry (PDV). Planar detonations were produced by impacting the explosive with a projectile launched in a gas-gun. The impact state was varied to produce varied distance to detonation, and therefore varied support of the Taylor wave following the Chapman-Jouget (CJ) or sonic state. Profiles from experiments with different support should be the same between the Von-Neumann (VN) spike and CJ state and different thereafter. Comparison of profiles with differing support, therefore, allows us to estimate reaction zone lengths. For the TATB based explosive, a reaction zone length of {approx} 3.9 mm, 500 ns was measured in EDC-35, and a reaction zone length of {approx} 6.3 mm, 800 ns was measured in PBX 9502 pre-cooled to -55 C. The respective VN spike state was 2.25 {+-} 0.05 km/s in EDC-35 and 2.4 {+-} 0.1 km/s in the cooled PBX 9502. We do not believe we have resolved either the VN spike state (> 2.6 km/s) nor the reaction zone length (<< 50 ns) in the HMX based explosives.

  12. Stress-induced piezoelectric field in GaN-based 450-nm light-emitting diodes

    SciTech Connect (OSTI)

    Tawfik, Wael Z. [Department of Materials Science and Engineering, Chonnam National University, Yongbong 300 Gwangju 500-757 (Korea, Republic of); Department of Physics, Faculty of Science, Beni-Suef University, Beni-Suef 62511 (Egypt); Hyeon, Gil Yong; Lee, June Key, E-mail: junekey@chonnam.ac.kr [Department of Materials Science and Engineering, Chonnam National University, Yongbong 300 Gwangju 500-757 (Korea, Republic of)

    2014-10-28T23:59:59.000Z

    We investigated the influence of the built-in piezoelectric field induced by compressive stress on the characteristics of GaN-based 450-nm light-emitting diodes (LEDs) prepared on sapphire substrates of different thicknesses. As the sapphire substrate thickness was reduced, the compressive stress in the GaN layer was released, resulting in wafer bowing. The wafer bowing-induced mechanical stress altered the piezoelectric field, which in turn reduced the quantum confined Stark effect in the InGaN/GaN active region of the LED. The flat-band voltage was estimated by measuring the applied bias voltage that induced a 180° phase shift in the electro-reflectance (ER) spectrum. The piezoelectric field estimated by the ER spectra changed by ?110?kV/cm. The electroluminescence spectral peak wavelength was blue-shifted, and the internal quantum efficiency was improved by about 22% at a high injection current of 100?mA. The LED on the 60-?m-thick sapphire substrate exhibited the highest light output power of ?59?mW at an injection current of 100?mA, with the operating voltage unchanged.

  13. Quantitatively Probing the Al Distribution in Zeolites. | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Quantitatively Probing the Al Distribution in Zeolites. Quantitatively Probing the Al Distribution in Zeolites. Abstract: The degree of substitution of Si4+ by Al3+ in the...

  14. Resolving three-dimensional shape of sub-50?nm wide lines with nanometer-scale sensitivity using conventional optical microscopes

    SciTech Connect (OSTI)

    Attota, Ravikiran, E-mail: Ravikiran.attota@nist.gov; Dixson, Ronald G. [Semiconductor and Dimensional Metrology Division, NIST, Gaithersburg, Maryland 20899 (United States)

    2014-07-28T23:59:59.000Z

    We experimentally demonstrate that the three-dimensional (3-D) shape variations of nanometer-scale objects can be resolved and measured with sub-nanometer scale sensitivity using conventional optical microscopes by analyzing 4-D optical data using the through-focus scanning optical microscopy (TSOM) method. These initial results show that TSOM-determined cross-sectional (3-D) shape differences of 30?nm–40?nm wide lines agree well with critical-dimension atomic force microscope measurements. The TSOM method showed a linewidth uncertainty of 1.22?nm (k?=?2). Complex optical simulations are not needed for analysis using the TSOM method, making the process simple, economical, fast, and ideally suited for high volume nanomanufacturing process monitoring.

  15. Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors

    SciTech Connect (OSTI)

    Han, Jaeheon [Department of Electronic Engineering, Kangnam University, 111 Gugal-dong, Giheung-gu, Yongin-city, Gyeonggi-do, Korea 446-702 (Korea, Republic of)

    2011-12-23T23:59:59.000Z

    Short channel GaAs Metal Semiconductor Field Effect Transistors (MESFETs) have been fabricated with gate length to 20 nm, in order to examine the characteristics of sub-50 nm MESFET scaling. Here the rise in the measured transconductance is mainly attributed to electron velocity overshoot. For gate lengths below 40 nm, however, the transconductance drops suddenly. The behavior of velocity overshoot and its degradation is investigated and simulated by using a transport model based on the retarded Langevin equation (RLE). This indicates the existence of a minimum acceleration length needed for the carriers to reach the overshoot velocity. The argument shows that the source resistance must be included as an internal element, or appropriate boundary condition, of relative importance in any model where the gate length is comparable to the inelastic mean free path of the carriers.

  16. Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer

    E-Print Network [OSTI]

    Ozbay, Ekmel

    N buffer layer BL grown on an Al2O3 substrate and an AlN IL grown under the AlGaN ternary layer TL. In the present study, we investigate the effects of an AlN BL on an Al2O3 substrate and an AlN IL between an AlGaNStructural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer

  17. Large-sensitive-area superconducting nanowire single-photon detector at 850 nm with high detection efficiency

    E-Print Network [OSTI]

    Li, Hao; You, Lixing; Yang, Xiaoyan; Zhang, Weijun; Liu, Xiaoyu; Chen, Sijing; Wang, Zhen; Xie, Xiaoming

    2015-01-01T23:59:59.000Z

    Satellite-ground quantum communication requires single-photon detectors of 850-nm wavelength with both high detection efficiency and large sensitive area. We developed superconducting nanowire single-photon detectors (SNSPDs) on one-dimensional photonic crystals, which acted as optical cavities to enhance the optical absorption, with a sensitive-area diameter of 50 um. The fabricated multimode fiber coupled NbN SNSPDs exhibited a maximum system detection efficiency (DE) of up to 82% and a DE of 78% at a dark count rate of 100 Hz at 850-nm wavelength as well as a system jitter of 105 ps.

  18. Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy

    SciTech Connect (OSTI)

    Chen, Yen-Ting [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China) [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China); Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden); Araki, Tsutomu [Department of Electrical and Electronic Engineering, Ritsumeikan University, 525-8577 Shiga (Japan)] [Department of Electrical and Electronic Engineering, Ritsumeikan University, 525-8577 Shiga (Japan); Palisaitis, Justinas; Persson, Per O. Å.; Olof Holtz, Per; Birch, Jens [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden)] [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden); Chen, Li-Chyong [Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China)] [Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China); Chen, Kuei-Hsien [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China) [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China); Nanishi, Yasushi [Global Innovation Research Organization, Ritsumeikan University, 525-8577 Shiga (Japan)] [Global Innovation Research Organization, Ritsumeikan University, 525-8577 Shiga (Japan)

    2013-11-11T23:59:59.000Z

    Nucleation mechanism of catalyst-free GaN nanorod grown on Si(111) is investigated by the fabrication of uniform and narrow (<35 nm) nanorods without a pre-defined mask by molecular beam epitaxy. Direct evidences show that the nucleation of GaN nanorods stems from the sidewall of the underlying islands down to the Si(111) substrate, different from commonly reported ones on top of the island directly. Accordingly, the growth and density control of the nanorods is exploited by a “narrow-pass” approach that only narrow nanorod can be grown. The optimal size of surrounding non-nucleation area around single nanorod is estimated as 88 nm.

  19. Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Xu, F. J.; Tang, N.; Qin, Z. X.; Shen, B. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)] [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Sang, L. W.; Sumiya, M. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Chen, Y. H. [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China)] [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)] [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2013-05-13T23:59:59.000Z

    Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 {mu}m) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 {mu}m by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m{sup 2} which gave rise to blueshift of the ISBT wavelength and thus partially compensated its redshift with increasing well thickness.

  20. Crystallographic Consulting Brings Research to the ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    at the ALS, with most of his research supporting pharmaceutical companies working on new treatments for metabolic diseases and cancer. Pauly spent 15 years of his career working...

  1. NM WAIDS: A PRODUCED WATER QUALITY AND INFRASTRUCTURE GIS DATABASE FOR NEW MEXICO OIL PRODUCERS

    SciTech Connect (OSTI)

    Martha Cather; Robert Lee; Ibrahim Gundiler; Andrew Sung; Naomi Davidson; Ajeet Kumar Reddy; Mingzhen Wei

    2003-04-01T23:59:59.000Z

    The New Mexico Water and Infrastructure Data System (NM WAIDS) seeks to alleviate a number of produced water-related issues in southeast New Mexico. The project calls for the design and implementation of a Geographical Information System (GIS) and integral tools that will provide operators and regulators with necessary data and useful information to help them make management and regulatory decisions. The major components of this system are: (1) databases on produced water quality, cultural and groundwater data, oil pipeline and infrastructure data, and corrosion information, (2) a web site capable of displaying produced water and infrastructure data in a GIS or accessing some of the data by text-based queries, (3) a fuzzy logic-based, site risk assessment tool that can be used to assess the seriousness of a spill of produced water, and (4) a corrosion management toolkit that will provide operators with data and information on produced waters that will aid them in deciding how to address corrosion issues. The various parts of NM WAIDS will be integrated into a website with a user-friendly interface that will provide access to previously difficult-to-obtain data and information. Primary attention during the first six months of this project has been focused on creating the water quality databases for produced water and surface water, along with collection of corrosion information and building parts of the corrosion toolkit. Work on the project to date includes: (1) Creation of a water quality database for produced water analyses. The database was compiled from a variety of sources and currently has over 4000 entries for southeast New Mexico. (2) Creation of a web-based data entry system for the water quality database. This system allows a user to view, enter, or edit data from a web page rather than having to directly access the database. (3) Creation of a semi-automated data capturing system for use with standard water quality analysis forms. This system improves the accuracy and speed of water quality data entry. (4) Acquisition of ground water data from the New Mexico State Engineer's office, including chloride content and TDS (Total Dissolved Solids) for over 30,000 data points in southeast New Mexico. (5) Creation of a web-based scale prediction tool, again with a web-based interface, that uses two common scaling indices (Stiff-Davis and Oddo-Thomson) to predict the likelihood of scaling. This prediction tool can either run from user input data, or the user can select samples from the water analysis database. (6) Creation of depth-to-groundwater maps for the study area. (7) Analysis of water quality data by formation. (8) Continuation of efforts to collect produced water quality information from operators in the southeast New Mexico area. (9) Qualitative assessment of produced water from various formations regarding corrosivity. (10) Efforts at corrosion education in the region through operator visits. Future work on this project will include: (11) Development of an integrated web and GIS interface for all the information collected in this effort. (12) Continued development of a fuzzy logic spill risk assessment tool that was initially developed prior to this project. Improvements will include addition of parameters found to be significant in determining the impact of a brine spill at a specific site. (13) Cleanup and integration of water quality databases. (14) Compilation of both hard copy and online corrosion toolkit material.

  2. NM WAIDS: A PRODUCED WATER QUALITY AND INFRASTRUCTURE GIS DATABASE FOR NEW MEXICO OIL PRODUCERS

    SciTech Connect (OSTI)

    Martha Cather; Robert Lee; Ibrahim Gundiler; Andrew Sung

    2003-09-24T23:59:59.000Z

    The New Mexico Water and Infrastructure Data System (NM WAIDS) seeks to alleviate a number of produced water-related issues in southeast New Mexico. The project calls for the design and implementation of a Geographical Information System (GIS) and integral tools that will provide operators and regulators with necessary data and useful information to help them make management and regulatory decisions. The major components of this system are: (1) Databases on produced water quality, cultural and groundwater data, oil pipeline and infrastructure data, and corrosion information. (2) A web site capable of displaying produced water and infrastructure data in a GIS or accessing some of the data by text-based queries. (3) A fuzzy logic-based, site risk assessment tool that can be used to assess the seriousness of a spill of produced water. (4) A corrosion management toolkit that will provide operators with data and information on produced waters that will aid them in deciding how to address corrosion issues. The various parts of NM WAIDS will be integrated into a website with a user-friendly interface that will provide access to previously difficult-to-obtain data and information. Primary attention during the first six months of this project was focused on creating the water quality databases for produced water and surface water, along with collecting of corrosion information and building parts of the corrosion toolkit. Work on the project to date includes: (1) Creation of a water quality database for produced water analyses. The database was compiled from a variety of sources and currently has over 7000 entries for New Mexico. (2) Creation of a web-based data entry system for the water quality database. This system allows a user to view, enter, or edit data from a web page rather than having to directly access the database. (3) Creation of a semi-automated data capturing system for use with standard water quality analysis forms. This system improves the accuracy and speed of water quality data entry. (4) Acquisition of ground water data from the New Mexico State Engineer's office, including chloride content and TDS (Total Dissolved Solids) for over 30,000 data points in southeast New Mexico. (5) Creation of a web-based scale prediction tool, again with a web-based interface, that uses two common scaling indices to predict the likelihood of scaling. This prediction tool can either run from user input data, or the user can select samples from the water analysis database. (6) Creation of depth-to-groundwater maps for the study area. (7) Analysis of water quality data by formation. (8) Continuation of efforts to collect produced water quality information from operators in the southeast New Mexico area. (9) Qualitative assessment of produced water from various formations regarding corrosivity. (10) Efforts at corrosion education in the region through operator visits. Future work on this project will include: (1) Development of an integrated web and GIS interface for all the information collected in this effort. (2) Continued development of a fuzzy logic spill risk assessment tool that was initially developed prior to this project. Improvements will include addition of parameters found to be significant in determining the impact of a brine spill at a specific site. (3) Compilation of both hard copy and online corrosion toolkit material.

  3. Use of a dynamic simulation model to understand nitrogen cycling in the middle Rio Grande, NM.

    SciTech Connect (OSTI)

    Meixner, Tom (University of Arizona, Tucson, AZ); Tidwell, Vincent Carroll; Oelsner, Gretchen (University of Arizona, Tucson, AZ); Brooks, Paul (University of Arizona, Tucson, AZ); Roach, Jesse D.

    2008-08-01T23:59:59.000Z

    Water quality often limits the potential uses of scarce water resources in semiarid and arid regions. To best manage water quality one must understand the sources and sinks of both solutes and water to the river system. Nutrient concentration patterns can identify source and sink locations, but cannot always determine biotic processes that affect nutrient concentrations. Modeling tools can provide insight into these large-scale processes. To address questions about large-scale nitrogen removal in the Middle Rio Grande, NM, we created a system dynamics nitrate model using an existing integrated surface water--groundwater model of the region to evaluate our conceptual models of uptake and denitrification as potential nitrate removal mechanisms. We modeled denitrification in groundwater as a first-order process dependent only on concentration and used a 5% denitrification rate. Uptake was assumed to be proportional to transpiration and was modeled as a percentage of the evapotranspiration calculated within the model multiplied by the nitrate concentration in the water being transpired. We modeled riparian uptake as 90% and agricultural uptake as 50% of the respective evapotranspiration rates. Using these removal rates, our model results suggest that riparian uptake, agricultural uptake and denitrification in groundwater are all needed to produce the observed nitrate concentrations in the groundwater, conveyance channels, and river as well as the seasonal concentration patterns. The model results indicate that a total of 497 metric tons of nitrate-N are removed from the Middle Rio Grande annually. Where river nitrate concentrations are low and there are no large nitrate sources, nitrate behaves nearly conservatively and riparian and agricultural uptake are the most important removal mechanisms. Downstream of a large wastewater nitrate source, denitrification and agricultural uptake were responsible for approximately 90% of the nitrogen removal.

  4. Epitaxial {tau} phase MnAl thin films on MgO (001) with thickness-dependent magnetic anisotropy

    SciTech Connect (OSTI)

    Cui Yishen; Chen Wei [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Yin Wenjing; Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)

    2011-11-15T23:59:59.000Z

    In this study, ferromagnetic MnAl films were prepared by alternating Al/Mn quasi-monolayer deposition using a novel biased target ion beam deposition (BTIBD) technique. XRD results showed that the magnetic {tau} phase was well formed in MnAl thin films ({approx}10 nm), which grew epitaxially on single crystal MgO (001) substrates. The optimized saturation magnetization was {approx}394 emu/cc. Furthermore, we observed a thickness-dependent uniaxial anisotropy in ferromagnetic MnAl films, which was attributed to the change of the tetragonal lattice distortion as a function of film thickness. The relationship between the film thicknesses and saturation magnetizations suggested the existence of a magnetically dead layer {approx}2.7 nm with an extrapolated saturation moment around 523 emu/cc ({approx}1.90 {mu}{sub B}/Mn). This value has exceeded the experimental value in bulk materials and is close to the theoretically predicted magnetization ({approx}1.975 {mu}{sub B}/Mn).

  5. The thermodynamic properties of hydrated -Al2O3 nanoparticles

    SciTech Connect (OSTI)

    Spencer, Elinor [Virginia Polytechnic Institute and State University] [Virginia Polytechnic Institute and State University; Huang, Baiyu [Brigham Young University, Provo] [Brigham Young University, Provo; Parker, Stewart F. [ISIS Facility, Rutherford Appleton Laboratory (ISIS)] [ISIS Facility, Rutherford Appleton Laboratory (ISIS); Kolesnikov, Alexander I [ORNL] [ORNL; Ross, Dr. Nancy [Virginia Polytechnic Institute and State University] [Virginia Polytechnic Institute and State University; Woodfield, Brian [Brigham Young University, Provo] [Brigham Young University, Provo

    2013-01-01T23:59:59.000Z

    In this paper we report a combined calorimetric and inelastic neutron scattering (INS) study of hydrated -Al2O3 ( -alumina) nanoparticles. These complementary techniques have enabled a comprehensive evaluation of the thermodynamic properties of this technological and industrially important metal oxide to be achieved. The isobaric heat capacity (Cp) data presented herein provide further critical insights into the much-debated chemical composition of -alumina nanoparticles. Furthermore, the isochoric heat capacity (Cv) of the surface water, which is so essential to the stability of all metal-oxides at the nanoscale, has been extracted from the high-resolution INS data and differs significantly from that of ice Ih due to the dominating influence of strong surface-water interactions. This study also encompassed the analysis of four -alumina samples with differing pore diameters [4.5 (1), 13.8 (2), 17.9 (3), and 27.2 nm (4)], and the results obtained allow us to unambiguously conclude that the water content and pore size have no influence on the thermodynamic behaviour of hydrated -alumina nanoparticles.

  6. Calibration of Silver Plasmon Rulers in the 1-25 nm Separation Range: Experimental Indications of Distinct Plasmon Coupling Regimes

    E-Print Network [OSTI]

    Calibration of Silver Plasmon Rulers in the 1-25 nm Separation Range: Experimental Indications of Distinct Plasmon Coupling Regimes Linglu Yang, Hongyun Wang, Bo Yan, and Bjo¨rn M. Reinhard* Department nanoparticles, so-called silver plasmon rulers, are synthesized with use of a rational DNA programmed self

  7. Power Supply Optimization in Sub-130 nm Leakage Dominant Technologies Man L Mui Kaustav Banerjee Amit Mehrotra

    E-Print Network [OSTI]

    Power Supply Optimization in Sub-130 nm Leakage Dominant Technologies Man L Mui Kaustav Banerjee a methodology for systematically optimizing the power supply voltage for maximizing the performance of VLSI cir- cuits in technologies where leakage power is not an insignificant fraction of the total power

  8. Photodissociation of Ozone from 321 to 329 nm: The Relative Yields P2) with O2(X 3

    E-Print Network [OSTI]

    Houston, Paul L.

    Photodissociation of Ozone from 321 to 329 nm: The Relative Yields of O(3 P2) with O2(X 3 g - ), O2 Supporting Information ABSTRACT: Product imaging of O(3 P2) following dissociation of ozone has been used to determine the relative yields of the product channels O(3 P2) + O2(X 3 g - ) of ozone. All three channels

  9. A Fiber-Optic-Based 1550-nm Laser Radar Altimeter with RF Pulse Compression Christopher Allen, Sivaprasad Gogineni

    E-Print Network [OSTI]

    Kansas, University of

    A Fiber-Optic-Based 1550-nm Laser Radar Altimeter with RF Pulse Compression Christopher Allen-the-shelf fiber-optic components and traditional RF and digital signal processing techniques to achieve fine erbium-doped fiber amplifiers (EDFAs) could be used to provide optical gain. The transmitted signal

  10. Development of a 1319 nm Laser Radar using Fiber-Optics and RF Pulse Compression: Receiver Characterization

    E-Print Network [OSTI]

    Kansas, University of

    Development of a 1319 nm Laser Radar using Fiber-Optics and RF Pulse Compression: Receiver and commercially available fiber-optic technologies. We use radio frequency (RF) pulse compression and digital commensurate with the desired range accuracy. With today's off-the-shelf fiber-optic components, multi

  11. Low-threshold, mirrorless emission at 981 nm in an Yb,Gd,Lu:KYW inverted rib waveguide laser

    E-Print Network [OSTI]

    Low-threshold, mirrorless emission at 981 nm in an Yb,Gd,Lu:KYW inverted rib waveguide laser Amol for generating short pulses [2]. Liquid phase epitaxy has been used to fabricate planar [3, 4] and channel [5, 6W and a channel waveguide laser with an output power of 11 mW [9]. In this paper we demonstrate mirrorless lasing

  12. 2512 IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 36, NO. 5, OCTOBER 2008 Experimental Investigation of 193-nm

    E-Print Network [OSTI]

    Scharer, John E.

    2512 IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 36, NO. 5, OCTOBER 2008 Experimental Investigation of 193-nm Laser Breakdown in Air Magesh Thiyagarajan, Member, IEEE, and John E. Scharer, Senior Member, IEEE Abstract--We present the measurements and analysis of laser- induced breakdown processes in dry

  13. Sub-10-nm half-pitch electron-beam lithography by using poly,,methyl methacrylate... as a negative resist

    E-Print Network [OSTI]

    Berggren, Karl K.

    is of great importance for high-density magnetic storage, integrated circuits, and nanoelectronic and nanophotonic devices. Until now, hydrogen silsesquioxane HSQ and calixarene were the only two reported negative, the authors report that 10-nm half-pitch dense nanostructures can also be readily fabricated using the well

  14. A 65nm CMOS Ultra Low Power and Low Noise 131M Front-End Transimpedance Amplifier

    E-Print Network [OSTI]

    Ayers, Joseph

    A 65nm CMOS Ultra Low Power and Low Noise 131M Front-End Transimpedance Amplifier Jiaping Hu and simulation of a high-transimpedance gain, ultra low-power dissipation and low-noise CMOS front- end control [3]. However, it introduces design challenges in the form of trade-offs between noise, power

  15. Using Mobilize Power Management IP for Dynamic & Static Power Reduction in SoC at 130 nm

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Using Mobilize Power Management IP for Dynamic & Static Power Reduction in SoC at 130 nm Dan Tensilica's 32-bit Xtensa microprocessor core, using Virtual Silicon's Power Management IP. Independent of incorporating more and more devices on a single chip, but also managing the increase in the power that goes

  16. Abstract--High speed, oxide-confined, polyimide-planarized 850 nm vertical cavity surface emitting lasers (VCSELs) exhibit

    E-Print Network [OSTI]

    Lear, Kevin L.

    10760 1 Abstract--High speed, oxide-confined, polyimide-planarized 850 nm vertical cavity surface using a reproducible, simple process incorporating polyimide with good adhesion that does not require based on a simplified, robust process incorporating photosensitive polyimide with good metal adhesion

  17. Dynamics of cavitation bubble induced by 193 nm ArF excimer laser in concentrated sodium chloride solutions

    E-Print Network [OSTI]

    Palanker, Daniel

    of pulsed lasers for ablation, drilling, and cutting of soft tissues in liquid environments are accompaniedDynamics of cavitation bubble induced by 193 nm ArF excimer laser in concentrated sodium chloride solutions Igor Turovets and Daniel Palanker Laser Center, Hadassah University Hospital, P.O. Box 12000

  18. High resolution photoelectron images and D{sup +} photofragment images following 532-nm photolysis of D{sub 2}

    SciTech Connect (OSTI)

    Chandler, D.W.; Neyer, D.W. [Sandia National Labs., Livermore, CA (United States); Heck, A.J. [Univ. of Warwick, Coventry (United Kingdom). Dept. of Chemistry

    1998-01-01T23:59:59.000Z

    The non-resonant ionization and dissociation of D{sub 2} by intense 532-nm laser light is studied by a variation of the ``Ion Imaging`` technique called ``Velocity Mapping``. Images of the both the photoelectrons and D{sup +} photofragments are obtained and analyzed at two different laser intensities. Results are compared to previous studies and several differences are discussed.

  19. The effects of 100 nm-diameter Au nanoparticles on dye-sensitized solar Changwoo Nahm,1

    E-Print Network [OSTI]

    Park, Byungwoo

    The effects of 100 nm-diameter Au nanoparticles on dye-sensitized solar cells Changwoo Nahm,1 nanoparticles for dye-sensitized solar cells (DSSCs). At the optimum Au/TiO2 mass ratio of 0.05, the power nanoparticles were also introduced to the electrodes of dye-sensitized solar cells (DSSCs), and the solar-cell

  20. Summary Leaf reflectance at visible and near-infrared wavelengths (4001000 nm) is related primarily to pigmenta-

    E-Print Network [OSTI]

    Richardson, Andrew D.

    Summary Leaf reflectance at visible and near-infrared wavelengths (400­1000 nm) is related physiology and relationships between plants and their growth environment. We studied reflectance of two co collected from 24 sites and white spruce from 30 sites. Overall, reflectance spectra of the two species were

  1. South Of Espanola; North Of Pojoaque At Intersection of NM399 and US 84/285 Turn onto 399(WSW),

    E-Print Network [OSTI]

    Kurien, Susan

    will be on your left, Go to third house on right (#18 on fence), 1.5 story adobe with passive solar Windows facing at Affordable Price Or Possible Lease or Lease to Purchase 18 Terrace Farm Rd LaMesilla, NM 2 story passive the Puye Ruins on Santa Clara Pueblo. House is oriented with huge solar windows facing due south toward

  2. Development of scanning x-ray fluorescence microscope with spatial resolution of 30 nm using Kirkpatrick-Baez mirror optics

    SciTech Connect (OSTI)

    Matsuyama, S.; Mimura, H.; Yumoto, H.; Sano, Y.; Yamamura, K.; Yabashi, M.; Nishino, Y.; Tamasaku, K.; Ishikawa, T.; Yamauchi, K. [Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871 (Japan); Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871 (Japan); SPring-8/Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Kouto, Sayoucho, Sayogun, Hyogo 679-5148 (Japan); SPring-8/RIKEN, 1-1-1 Kouto, Sayoucho, Sayogun, Hyogo 679-5148 (Japan); Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871 (Japan)

    2006-10-15T23:59:59.000Z

    We developed a high-spatial-resolution scanning x-ray fluorescence microscope (SXFM) using Kirkpatrick-Baez mirrors. As a result of two-dimensional focusing tests at BL29XUL of SPring-8, the full width at half maximum of the focused beam was achieved to be 50x30 nm{sup 2} (VxH) under the best focusing conditions. The measured beam profiles were in good agreement with simulated results. Moreover, beam size was controllable within the wide range of 30-1400 nm by changing the virtual source size, although photon flux and size were in a trade-off relationship. To demonstrate SXFM performance, a fine test chart fabricated using focused ion beam system was observed to determine the best spatial resolution. The element distribution inside a logo mark of SPring-8 in the test chart, which has a minimum linewidth of approximately 50-60 nm, was visualized with a spatial resolution better than 30 nm using the smallest focused x-ray beam.

  3. Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

    SciTech Connect (OSTI)

    Al tahtamouni, T. M., E-mail: talal@yu.edu.jo [Department of Physics, Yarmouk University, Irbid 21163 (Jordan); Lin, J. Y.; Jiang, H. X. [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)] [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2014-04-15T23:59:59.000Z

    Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers. It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the decreased density of surface pits and improved surface morphology and crystalline quality. The performance of the DUV LEDs fabricated using Mg-SL was significantly improved, as manifested by enhanced light intensity and output power, and reduced turn-on voltage. The improved performance is attributed to the enhanced blocking of electron overflow, and enhanced hole injection.

  4. Quantitatively Probing the Al Distribution in Zeolites

    SciTech Connect (OSTI)

    Vjunov, Aleksei; Fulton, John L.; Huthwelker, Thomas; Pin, Sonia; Mei, Donghai; Schenter, Gregory K.; Govind, Niranjan; Camaioni, Donald M.; Hu, Jian Z.; Lercher, Johannes A.

    2014-06-11T23:59:59.000Z

    The degree of substitution of Si4+ by Al3+ in the oxygen-terminated tetrahedra (Al T-sites) of zeolites determines the concentration of ion-exchange and Brønsted acid sites. As the location of the tetrahedra and the associated subtle variations in bond angles influence the acid strength, quantitative information about Al T-sites in the framework is critical to rationalize catalytic properties and to design new catalysts. A quantitative analysis is reported that uses a combination of extended X-ray absorption fine structure (EXAFS) analysis and 27Al MAS NMR spectroscopy supported by DFT-based molecular dynamics simulations. To discriminate individual Al atoms, sets of ab initio EXAFS spectra for various T-sites are generated from DFT-based molecular dynamics simulations allowing quantitative treatment of the EXAFS single- and multiple-photoelectron scattering processes out to 3-4 atom shells surrounding the Al absorption center. It is observed that identical zeolite types show dramatically different Al-distributions. A preference of Al for T-sites that are part of one or more 4-member rings in the framework over those T-sites that are part of only 5- and 6-member rings in the HBEA150 sample has been determined from a combination of these methods. This work was supported by the U. S. Department of Energy (DOE), Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences & Biosciences.

  5. Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

    SciTech Connect (OSTI)

    Lugani, L.; Carlin, J.-F.; Py, M. A.; Grandjean, N. [ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

    2014-09-15T23:59:59.000Z

    We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800?°C and show that they are not fully stable. In particular, InAlN top layers undergo degradation during high temperature annealing due to a surface related process, which causes the loss of crystal quality. This strongly impacts the transport properties of InAlN/GaN HEMT heterostructures; in particular, the mobility is significantly reduced. However, we demonstrate that high thermal stability can be achieved by capping with a GaN layer as thin as 0.5?nm. Those findings enabled us to realize in situ passivated HEMT heterostructures with state of the art transport properties.

  6. Laser ablation of AlN films grown on sapphire substrate

    SciTech Connect (OSTI)

    Safadi, Mona R.; Thakur, Jagdish S.; Auner, Gregory W. [Department of Biomedical Engineering, Ligon Center of Vision, Wayne State University, Detroit, Michigan 48202 (United States); Department of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan 48202 (United States); Department of Electrical and Computer Engineering, Department of Biomedical Engineering, Ligon Center of Vision, Wayne State University, Detroit, Michigan 48202 (United States)

    2005-04-15T23:59:59.000Z

    Ablation threshold for single-crystal AlN semiconductor films grown epitaxially on sapphire substrate using indigenously built hollow cathode plasma deposition source molecular-beam epitaxy technique is investigated for a number of pulses by varying the fluence value of each pulse. Using a KrF excimer laser ({lambda}=248 nm and {tau}=25 ns) as a radiation source, we found that ablation of AlN thin films is a discontinuous process and its onset requires a minimum threshold fluence {approx_equal}1.59 J/cm{sup 2}. The ablation depth is analyzed for different numbers of pulses and for each number as a function of increasing fluence values. The results show that the ablation depth increases linearly with increasing pulse fluence. It is found that the use of a single pulse for ablation at a given value of fluence is more efficient than a large number of pulses at the same value of fluence/pulse. In addition, we investigated the lowest pulse-fluence limit that can sustain ablation on a disordered AlN film surface. We present a theoretical discussion about the laser energy absorption mechanism and also the rate of energy transfer from the conduction-band electrons to lattice phonons which can lead to the ablation of AlN film. It is found that the rate of energy transfer increases linearly with increasing temperature of the electron gas.

  7. Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy

    SciTech Connect (OSTI)

    Heo, Junseok; Bhattacharya, Pallab [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)] [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States); Zhou, Zifan [Department of Electrical and Computer Engineering, University of Michigan-Dearborn, Dearborn, Michigan 48128 (United States)] [Department of Electrical and Computer Engineering, University of Michigan-Dearborn, Dearborn, Michigan 48128 (United States); Guo, Wei [Microsystems Engineering, Rochester Institute of Technology, Rochester, New York 14623 (United States)] [Microsystems Engineering, Rochester Institute of Technology, Rochester, New York 14623 (United States); Ooi, Boon S. [Photonics Laboratory, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia)] [Photonics Laboratory, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia)

    2013-10-28T23:59:59.000Z

    GaN nanowires containing AlN/GaN distributed Bragg reflector (DBR) heterostructures have been grown on (001) silicon substrate by molecular beam epitaxy. A peak reflectance of 70% with normal incidence at 560 nm is derived from angle resolved reflectance measurements on the as-grown nanowire DBR array. The measured peak reflectance wavelength is significantly blue-shifted from the ideal calculated value. The discrepancy is explained by investigating the reflectance of the nanoscale DBRs with a finite difference time domain technique. Ensemble nanowire microcavities with In{sub 0.3}Ga{sub 0.7}N nanowires clad by AlN/GaN DBRs have also been characterized. Room temperature emission from the microcavity exhibits considerable linewidth narrowing compared to that measured for unclad In{sub 0.3}Ga{sub 0.7}N nanowires. The resonant emission is characterized by a peak wavelength and linewidth of 575 nm and 39 nm, respectively.

  8. A new discontinuously reinforced aluminum MMC: Al+AlB{sub 2} flakes

    SciTech Connect (OSTI)

    HALL,AARON C.; ECONOMY,J.

    2000-06-08T23:59:59.000Z

    Development of a novel metal matrix composite based on the Al-B alloy system has been undertaken. Preparation of this discontinuously reinforced material is based on the precipitation of high aspect ratio AlB{sub 2} from an Al-B alloy. This paper describes a number of efforts forced on preparing high volume fractions (> 30 v%) of AlB{sub 2} in aluminum. New insights into the behavior of the Al-B alloys system allowed this effort to be successful.

  9. Optical characteristics of nanocrystalline Al{sub x}Ga{sub 1?x}N thin films deposited by hollow cathode plasma-assisted atomic layer deposition

    SciTech Connect (OSTI)

    Goldenberg, Eda, E-mail: goldenberg@unam.bilkent.edu.tr [UNAM – National Nanotechnology Research Center, Bilkent University, Ankara 06800 (Turkey); Ozgit-Akgun, Cagla; Biyikli, Necmi [Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800 (Turkey); Kemal Okyay, Ali [Department of Electrical and Electronics Engineering, Bilkent University, Ankara 06800 (Turkey)

    2014-05-15T23:59:59.000Z

    Gallium nitride (GaN), aluminum nitride (AlN), and Al{sub x}Ga{sub 1?x}N films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200?°C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and Al{sub x}Ga{sub 1?x}N films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2?nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4?nm when the annealing duration increased from 30?min to 2?h (800?°C). For all films, the average optical transmission was ?85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and Al{sub x}Ga{sub 1?x}N were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (??=?550?nm) with the increased Al content x (0???x???1), while the extinction coefficients (k) were approximately zero in the VIS spectrum (>400?nm). Postdeposition annealing at 900?°C for 2?h considerably lowered the refractive index value of GaN films (2.33–1.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95?eV, and it decreased to 3.90?eV for films annealed at 800?°C for 30?min and 2?h. On the other hand, this value increased to 4.1?eV for GaN films annealed at 900?°C for 2?h. This might be caused by Ga{sub 2}O{sub 3} formation and following phase change. The optical bandgap value of as-deposited Al{sub x}Ga{sub 1?x}N films decreased from 5.75 to 5.25?eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not affect the bandgap of Al-rich films.

  10. Effect of heat treatment on microstructure and interface of SiC particle reinforced 2124 Al matrix composite

    SciTech Connect (OSTI)

    Mandal, Durbadal, E-mail: durbadal73@yahoo.co.in [MEF Division, CSIR-National Metallurgical Laboratory, Jamshedpur 831007 (India); Viswanathan, Srinath [Dept of Metallurgical and Materials Engineering, University of Alabama, Tuscaloosa, AL (United States)

    2013-11-15T23:59:59.000Z

    The microstructure and interface between metal matrix and ceramic reinforcement of a composite play an important role in improving its properties. In the present investigation, the interface and intermetallic compound present in the samples were characterized to understand structural stability at an elevated temperature. Aluminum based 2124 alloy with 10 wt.% silicon carbide (SiC) particle reinforced composite was prepared through vortex method and the solid ingot was deformed by hot rolling for better particle distribution. Heat treatment of the composite was carried out at 575 °C with varying holding time from 1 to 48 h followed by water quenching. In this study, the microstructure and interface of the SiC particle reinforced Al based composites have been studied using optical microscopy, scanning electron microscopy (SEM) coupled with energy dispersive X-ray spectroscopy (EDS), electron probe micro-analyzer (EPMA) associated with wavelength dispersive spectroscopy (WDS) and transmission electron microscopy (TEM) to identify the precipitate and intermetallic phases that are formed during heat treatment. The SiC particles are uniformly distributed in the aluminum matrix. The microstructure analyses of Al–SiC composite after heat treatment reveal that a wide range of dispersed phases are formed at grain boundary and surrounding the SiC particles. The energy dispersive X-ray spectroscopy and wavelength dispersive spectroscopy analyses confirm that finely dispersed phases are CuAl{sub 2} and CuMgAl{sub 2} intermetallic and large spherical phases are Fe{sub 2}SiAl{sub 8} or Al{sub 15}(Fe,Mn){sub 3}Si. It is also observed that a continuous layer enriched with Cu and Mg of thickness 50–80 nm is formed at the interface in between Al and SiC particles. EDS analysis also confirms that Cu and Mg are segregated at the interface of the composite while no carbide is identified at the interface. - Highlights: • The composite was successfully heat treated at 575°C for 1-48 hrs. • A layer of 50-75 nm is formed at interface after heat treatment. • No Carbide formation and SiC dissolution is observed at this temperature. • MgAl{sub 2}O{sub 4}, CuMgAl{sub 2} phases are segregated at interface of Al-SiC composite. • Mg and Cu are also segregated at near to the grain boundary.

  11. Thermal diffusion in Ni/Al multilayer

    SciTech Connect (OSTI)

    Swain, M.; Bhattacharya, D.; Singh, S.; Basu, S. [Solid State Physics Division, Bhabha Atomic Research Center, Mumbai 400085 (India); Gupta, M. [UGC-DAE-Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India)

    2013-02-05T23:59:59.000Z

    Two Ni/Al multilayers deposited by ion beam sputtering of nominal design [Ni(200A)/Al(100A)] Multiplication-Sign 5 and [Ni(50A)/Al(227A)] Multiplication-Sign 5 on Si substrates were annealed at 200 Degree-Sign C. As-deposited and annealed samples were characterized by x-ray diffraction (XRD) and x-ray reflectometry (XRR). The effort was to study the path of alloying in the above two multilayers of same elements but of opposite stoichiometric ratio. We find distinct differences in alloying of these samples.

  12. On the lateral crystal growth of laser irradiated NiTi thin films A. J. Birnbaum, Y. Lawrence Yao, U.-J. Chung, James. S. Im, X. Huang et al.

    E-Print Network [OSTI]

    Yao, Y. Lawrence

    -aspect crystals via pulsed, melt-mediated laser crystallization in NiTi thin films. Sputter-deposited 200 nm Ni of Physics. DOI: 10.1063/1.3138782 Pulsed, melt-mediated laser crystallization techniques have been studied phase processing. Wang et al.6 and Bellouard and co-workers7 used a near IR cw laser to selectively

  13. A novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} for near UV white light-emitting diodes

    SciTech Connect (OSTI)

    Yang, Zhigang; Zhao, Zhengyan; Shi, Yurong; Wang, Yuhua, E-mail: wyh@lzu.edu.cn

    2013-10-15T23:59:59.000Z

    Graphical abstract: - Highlights: • Novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} was prepared by solid-state reaction. • Excitation spectra suggested an obvious absorption in near-ultraviolet region. • Under 392 nm excitation, the phosphors exhibited a red emission at 614 nm. • Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} could be potentially applied in near UV white LEDs. - Abstract: A novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} was synthesized using a solid-state reaction method, and its luminescence characteristics and charge compensators effect (Li{sup +}, Na{sup +}, K{sup +}) were investigated. The excitation spectra showed a obvious absorption in near-ultraviolet region. Under 392 nm excitation, the phosphors exhibited an intense red emission at 614 nm. The Commission Internationale de l’Eclairage (CIE) chromaticity coordinates and quantum efficiency (QE) were (0.65, 0.35) and 62.3%, respectively. The good color saturation, high quantum efficiency and small thermal-quenching properties indicate that Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} could be potentially applied in near UV white light-emitting diodes.

  14. Summary Slides of ALS Industry Highlights

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Highlight ALSNews Volume 15 Caribou Biosciences Has Roots at ALS - 09.24.2014 Vol. 357 13 Lithium-Battery Dendrite Growth: A New View 8.3.2 04.30.2014 Vol. 352 12 IBM Probes...

  15. Western Baldwin County, AL Grid Interconnection Project

    SciTech Connect (OSTI)

    Thomas DeBell

    2011-09-30T23:59:59.000Z

    The Objective of this Project was to provide an additional supply of electricity to the affected portions of Baldwin County, AL through the purchase, installation, and operation of certain substation equipment.

  16. L{sub g}?=?100?nm In{sub 0.7}Ga{sub 0.3}As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

    SciTech Connect (OSTI)

    Koh, D., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); SEMATECH, Inc., Albany, New York 12203 (United States); Kwon, H. M. [Department of Electronics Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kim, T.-W., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org; Veksler, D.; Gilmer, D.; Kirsch, P. D. [SEMATECH, Inc., Albany, New York 12203 (United States); Kim, D.-H. [SEMATECH, Inc., Albany, New York 12203 (United States); GLOBALFOUNDRIES, Malta, New York 12020 (United States); Hudnall, Todd W. [Department of Chemistry and Biochemistry, Texas State University, San Marcos, Texas, 78666 (United States); Bielawski, Christopher W. [Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712 (United States); Maszara, W. [GLOBALFOUNDRIES, Santa Clara, California 95054 (United States); Banerjee, S. K. [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

    2014-04-21T23:59:59.000Z

    In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In{sub 0.53}Ga{sub 0.47}As MOS capacitors with BeO and Al{sub 2}O{sub 3} and compared their electrical characteristics. As interface passivation layer, BeO/HfO{sub 2} bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In{sub 0.7}Ga{sub 0.3}As QW MOSFETs with a BeO/HfO{sub 2} dielectric, showing a sub-threshold slope of 100?mV/dec, and a transconductance (g{sub m,max}) of 1.1 mS/?m, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7?nm technology node and/or beyond.

  17. Formation of in-volume nanogratings with sub-100 nm periods in glass by femtosecond laser irradiation

    E-Print Network [OSTI]

    Liao, Yang; Cui, Yun; Qiao, Lingling; Bellouard, Yves; Sugioka, Koji; Cheng, Ya

    2015-01-01T23:59:59.000Z

    We present direct experimental observation of the morphological evolution during the formation of nanogratings with sub-100-nm periods with the increasing number of pulses. Theoretical simulation shows that the constructive interference of the scattering light from original nanoplanes will create an intensity maximum located between the two adjacent nanoplanes, resulting in shortening of the nanograting period by half. The proposed mechanism enables explaining the formation of nanogratings with periods beyond that predicted by the nanoplasmonic model.

  18. Cytometer LASER (nm) Detector range Fluorochrome Names check LSRII-A UV 355 A 505-550 Indo-1 (Blue)

    E-Print Network [OSTI]

    Oliver, Douglas L.

    Cytometer LASER (nm) Detector range Fluorochrome Names check LSRII-A UV 355 A 505-550 Indo-1 (Blue) B 420-460 Live Dead UV Blue Alexa 350 DAPI Indo-1(Violet) Hoechst 33342 C - empty Violet 405 A 505-550 Pac. Orange V500 VioGreen BVio 510 Viability Dye eF506 Alexa 430 Sapphire B 420-460 Pac. Blue eF450 V

  19. First Observation of Self-Amplified Spontaneous Emission in a Free-Electron Laser at 109 nm Wavelength

    E-Print Network [OSTI]

    Andruszków, J; Ayvazyan, V T; Baboi, N I; Bakker, R; Balakin, V; Barni, D; Bazhan, A; Bernard, M; Bosotti, A; Bourdon, J C; Brefeld, W; Brinkmann, R; Bühler, S; Carneiro, J P; Castellano, M G; Castro, P; Catani, L; Chel, S; Cho, Y; Choroba, S; Colby, E R; Decking, W; Den Hartog, P; Desmons, M; Dohlus, M; Edwards, D; Edwards, H T; Faatz, B; Feldhaus, J; Ferrario, M; Fitch, M J; Flöttmann, K; Fouaidy, M; Gamp, A; Garvey, Terence; Geitz, M A; Gluskin, E S; Gretchko, V; Hahn, U; Hartung, W H; Hubert, D; Hüning, M; Ischebek, R; Jablonka, M; Joly, J M; Juillard, M; Junquera, T; Jurkiewicz, P; Kabel, A C; Kahl, J; Kaiser, H; Kamps, T; Katelev, V V; Kirchgessner, J L; Körfer, M; Kravchuk, L V; Kreps, G; Krzywinski, J; Lokajczyk, T; Lange, R; Leblond, B; Leenen, M; Lesrel, J; Liepe, M; Liero, A; Limberg, T; Lorenz, R; Lu, H H; Lu, F H; Magne, C; Maslov, M A; Materlik, G; Matheisen, A; Menzel, J; Michelato, P; Möller, W D; Mosnier, A; Müller, U C; Napoly, O; Novokhatskii, A V; Omeich, M; Padamsee, H; Pagani, C; Peters, F; Petersen, B; Pierini, P; Pflüger, J; Piot, P; Phung Ngoc, B; Plucinski, L; Proch, D; Rehlich, K; Reiche, S; Reschke, D; Reyzl, I; Rosenzweig, J; Rossbach, J; Roth, S; Saldin, E L; Sandner, W; Sanok, Z; Schlarb, H; Schmidt, G; Schmüser, P; Schneider, J R; Schneidmiller, E A; Schreiber, H J; Schreiber, S; Schütt, P; Sekutowicz, J; Serafini, L; Sertore, D; Setzer, S; Simrock, S; Sonntag, B F; Sparr, B; Stephan, F; Sytchev, V V; Tazzari, S; Tazzioli, F; Tigner, Maury; Timm, M; Tonutti, M; Trakhtenberg, E; Treusch, R; Trines, D; Verzilov, V A; Vielitz, T; Vogel, V; Von Walter, G; Wanzenberg, R; Weiland, T; Weise, H; Weisend, J G; Wendt, M; Werner, M; White, M M; Will, I; Wolff, S; Yurkov, M V; Zapfe, K; Zhogolev, P; Zhou, F

    2000-01-01T23:59:59.000Z

    We present the first observation of Self-Amplified Spontaneous Emission (SASE) in a free-electron laser (FEL) in the Vacuum Ultraviolet regime at 109 nm wavelength (11 eV). The observed free-electron laser gain (approx. 3000) and the radiation characteristics, such as dependency on bunch charge, angular distribution, spectral width and intensity fluctuations all corroborate the existing models for SASE FELs.

  20. Luminescence and superradiance in electron-beam-excited Al{sub x}Ga{sub 1?x}N

    SciTech Connect (OSTI)

    Bokhan, P. A.; Gugin, P. P.; Zakrevsky, Dm. E.; Malin, T. V. [Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13, Lavrentieva av., Novosibirsk 630090 (Russian Federation); Zhuravlev, K. S.; Osinnykh, I. V. [Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13, Lavrentieva av., Novosibirsk 630090 (Russian Federation); Novosibirsk State University, 2 Pirogova Str., Novosibirsk 630090 (Russian Federation); Solomonov, V. I.; Spirina, A. V. [Institute of Electrophysics, Ural Division of the Russian Academy of Sciences, 106, Amundsen str., Ekaterinburg 620016 (Russian Federation)

    2014-09-21T23:59:59.000Z

    Luminescence and superradiance characteristics of 0.5–1.2-?m thick Al{sub x}Ga{sub 1?x}N films grown by molecular-beam epitaxy on sapphire substrates were studied under excitation of the films with low-energy (<20?keV) and high-energy (170?keV) electron beams. In both cases, the luminescence spectra looked quite similarly; they exhibited a band-edge luminescence with x-dependent wavelength ranging from 365?nm to 310?nm and a broadband emission taking over the whole visible spectral region. Superradiance within the broad band was obtained by pumping the samples with powerful an electron beam in the form of an open-discharge-generated filament.

  1. High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Gacevic, Z.; Fernandez-Garrido, S.; Calleja, E. [ISOM, Universidad Politecnica de Madrid, Avda. Complutense s/n, 28040 Madrid (Spain); Rebled, J. M.; Peiro, F. [LENS-MIND-IN2UB, Departament d'Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Estrade, S. [LENS-MIND-IN2UB, Departament d'Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); TEM-MAT, CCiT-UB, Sole i Sabaris 1, 08028 Barcelona (Spain)

    2011-07-18T23:59:59.000Z

    We report on properties of high quality {approx}60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be {+-} 1.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.

  2. Full Stokes observations in the He I 1083 nm spectral region covering an M3.2 flare

    E-Print Network [OSTI]

    Kuckein, C; Sainz, R Manso; Ramos, A Asensio

    2015-01-01T23:59:59.000Z

    We present an exceptional data set acquired with the Vacuum Tower Telescope (Tenerife, Spain) covering the pre-flare, flare, and post-flare stages of an M3.2 flare. The full Stokes spectropolarimetric observations were recorded with the Tenerife Infrared Polarimeter in the He I 1083.0 nm spectral region. The object under study was active region NOAA 11748 on 2013 May 17. During the flare the chomospheric He I 1083.0 nm intensity goes strongly into emission. However, the nearby photospheric Si I 1082.7 nm spectral line profile only gets shallower and stays in absorption. Linear polarization (Stokes Q and U) is detected in all lines of the He I triplet during the flare. Moreover, the circular polarization (Stokes V) is dominant during the flare, being the blue component of the He I triplet much stronger than the red component, and both are stronger than the Si I Stokes V profile. The Si I inversions reveal enormous changes of the photospheric magnetic field during the flare. Before the flare magnetic field conc...

  3. Note: Deep ultraviolet Raman spectrograph with the laser excitation line down to 177.3 nm and its application

    SciTech Connect (OSTI)

    Jin, Shaoqing [State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China) [State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); University of the Chinese Academy of Sciences, Beijing 100049 (China); Fan, Fengtao; Guo, Meiling; Zhang, Ying; Feng, Zhaochi, E-mail: zcfeng@dicp.ac.cn, E-mail: canli@dicp.ac.cn; Li, Can, E-mail: zcfeng@dicp.ac.cn, E-mail: canli@dicp.ac.cn [State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China)] [State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China)

    2014-04-15T23:59:59.000Z

    Deep UV Raman spectrograph with the laser excitation line down to 177.3 nm was developed in this laboratory. An ellipsoidal mirror and a dispersed-subtractive triple monochromator were used to collect and disperse Raman light, respectively. The triple monochromator was arranged in a triangular configuration with only six mirrors used. 177.3 nm laser excited Raman spectrum with cut-off wavenumber down to 200 cm{sup ?1} and spectral resolution of 8.0 cm{sup ?1} can be obtained under the condition of high purity N{sub 2} purging. With the C–C ? bond in Teflon selectively excited by the 177.3 nm laser, resonance Raman spectrum of Teflon with good quality was recorded on the home-built instrument and the ?-?{sup *} transition of C–C bond was studied. The result demonstrates that deep UV Raman spectrograph is powerful for studying the systems with electronic transition located in the deep UV region.

  4. High-average-power, 100-Hz-repetition-rate, tabletop soft-x-ray lasers at sub-15-nm wavelengths

    SciTech Connect (OSTI)

    Reagan, Brendon [Colorado State University, Fort Collins] [Colorado State University, Fort Collins; Berrill, Mark A [ORNL] [ORNL; Wernsing, Keith [Colorado State University, Fort Collins] [Colorado State University, Fort Collins; Baumgarten, Cory [Colorado State University, Fort Collins] [Colorado State University, Fort Collins; Woolston, Mark [Colorado State University, Fort Collins] [Colorado State University, Fort Collins; Rocca, Jorge [Colorado State University, Fort Collins] [Colorado State University, Fort Collins

    2014-01-01T23:59:59.000Z

    Efficient excitation of dense plasma columns at 100-Hz repetition rate using a tailored pump pulse profile produced a tabletop soft-x-ray laser average power of 0.1 mW at = 13.9 nm and 20 W at = 11.9 nm from transitions of Ni-like Ag and Ni-like Sn, respectively. Lasing on several other transitions with wavelengths between 10.9 and 14.7 nm was also obtained using 0.9-J pump pulses of 5-ps duration from a compact diode-pumped chirped pulse amplification Yb:YAG laser. Hydrodynamic and atomic plasma simulations show that the pump pulse profile, consisting of a nanosecond ramp followed by two peaks of picosecond duration, creates a plasma with an increased density of Ni-like ions at the time of peak temperature that results in a larger gain coefficient over a temporally and spatially enlarged space leading to a threefold increase in the soft-x-ray laser output pulse energy. The high average power of these compact soft-x-ray lasers will enable applications requiring high photon flux. These results open the path to milliwatt-average-power tabletop soft-x-ray lasers.

  5. ingeniera hidrulica en mxico, vol. XIX, nm. 4, pp. 121-128, octubre-diciembre de 2004 Introduccin

    E-Print Network [OSTI]

    Hernández-Walls, Rafael

    ). Entre estos métodos están los construidos con un rotor Savonius (eje perpendicular al campo de flujo Fonseca (1981) mencionan que los correntímetros de rotor Savonius responden a los flujos de cualquier

  6. al estado del: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    REA DE DERECHO ADMINISTRATIVO REA DE DERECHO CONSTITUCIONAL REA DE CIENCIA Escolano, Francisco 8 BOLETN OFICIAL DEL ESTADO Nm. 162 Sbado 7 de julio de 2012 Sec....

  7. formation of the main deposit. At lower current densities, it is possible to deposit only this extremely thin tin film: it is 5 nm thick

    E-Print Network [OSTI]

    Stocker, Thomas

    . Whereas the 200-nm copper and 300-nm tin films in Fig. 4 have a thickness close to that predicted. We propose the following mechan- istic explanation of this effect. First, in thin cells problems of Li rechargeable batteries. Indeed, cycling efficiency of Li batteries is drastically reduced

  8. 6. M. Jeltsch et al., Science 276, 1423 (1997); S. J. Oh et al., Dev. Biol. 188, 96 (1997).

    E-Print Network [OSTI]

    Suarez, Andrew V.

    6. M. Jeltsch et al., Science 276, 1423 (1997); S. J. Oh et al., Dev. Biol. 188, 96 (1997). 7. V, 671 (1997). 16. A. Vecchi et al., Eur. J. Cell Biol. 63, 247 (1994). 17. The presence of VEGFR-3 m. 12, 473 (1998). 21. L. C. Wang et al., EMBO J. 16, 4374 (1997). 22. P. Carmeliet et al., Nature 383

  9. Synthesis and structural characterization of a new aluminum oxycarbonitride, Al{sub 5}(O, C, N){sub 4}

    SciTech Connect (OSTI)

    Inuzuka, Haruya; Kaga, Motoaki; Urushihara, Daisuke [Department of Environmental and Materials Engineering, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Nakano, Hiromi [Cooperative Research Facility Center, Toyohashi University of Technology, Toyohashi 441-8580 (Japan); Asaka, Toru [Department of Environmental and Materials Engineering, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Fukuda, Koichiro, E-mail: fukuda.koichiro@nitech.ac.j [Department of Environmental and Materials Engineering, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)

    2010-11-15T23:59:59.000Z

    A new aluminum oxycarbonitride, Al{sub 5}(O{sub x}C{sub y}N{sub 4-x-y}) (x{approx}1.4 and y{approx}2.1), has been synthesized and characterized by X-ray powder diffraction, transmission electron microscopy and electron energy loss spectroscopy (EELS). The title compound was found to be hexagonal with space group P6{sub 3}/mmc, Z=2, and unit-cell dimensions a=0.328455(6) nm, c=2.15998(3) nm and V=0.201805(6) nm{sup 3}. The atom ratios O:C:N were determined by EELS. The final structural model, which is isomorphous with that of (Al{sub 4.4}Si{sub 0.6})(O{sub 1.0}C{sub 3.0}), showed the positional disordering of one of the three types of Al sites. The maximum-entropy method-based pattern fitting (MPF) method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensity partitioning was minimized. The reliability indices calculated from the MPF were R{sub wp}=6.94% (S=1.22), R{sub p}=5.34%, R{sub B}=1.35% and R{sub F}=0.76%. The crystal was an inversion twin. Each twin-related individual was isostructural with Al{sub 5}C{sub 3}N (space group P6{sub 3}mc, Z=2). - Graphical abstract: A new oxycarbonitride discovered in the Al-O-C-N system, Al{sub 5}(O{sub 1.4}C{sub 2.1}N{sub 0.5}). The crystal is an inversion twin, and hence the structure is represented by a split-atom model. The three-dimensional electron density distributions are determined by the maximum-entropy methods-based pattern fitting, being consistent with the disordered structural model. Display Omitted

  10. AlGaN/GaN/AlN quantum-well field-effect transistors with highly resistive AlN epilayers

    E-Print Network [OSTI]

    Jiang, Hongxing

    AlGaN/GaN/AlN quantum-well field-effect transistors with highly resistive AlN epilayers Z. Y. Fana 66506-2601 Received 23 November 2005; accepted 5 January 2006; published online 16 February 2006 AlGaN/GaN/AlN quantum-well field-effect transistors have been demonstrated. By replacing a semi-insulating GaN epilayer

  11. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S., E-mail: scorekci@kirklareli.edu.tr [K Latin-Small-Letter-Dotless-I rklareli University, Department of Physics (Turkey); Oeztuerk, M. K. [Gazi University, Department of Physics (Turkey); Yu, Hongbo [Bilkent University, Nanotechnology Research Center (Turkey); Cakmak, M.; Oezcelik, S. [Gazi University, Department of Physics (Turkey); Oezbay, E. [Bilkent University, Nanotechnology Research Center, Department of Physics, Department of Electrical and Electronics Engineering (Turkey)

    2013-06-15T23:59:59.000Z

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  12. al censo nacional: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DOCUMENTS 4,450,407 51984 Kwon et al. ... 324304 4 Romalis, Mike 229 (12) United States Patent Bezos et al. Computer Technologies and Information...

  13. al derecho castellano: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DOCUMENTS 4,450,407 51984 Kwon et al. ... 324304 4 Romalis, Mike 255 (12) United States Patent Bezos et al. Computer Technologies and Information...

  14. al alloy matrix: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    dislocation structure of both Al matrix and precipitates Gubicza, Jen 3 Elevated temperature wear of an aluminum matrix composite Al6061-20 percent aluminum(2) oxygen(3)...

  15. New ALS Technique Guides IBM in Next-Generation Semiconductor...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New ALS Technique Guides IBM in Next-Generation Semiconductor Development New ALS Technique Guides IBM in Next-Generation Semiconductor Development Print Wednesday, 21 January 2015...

  16. ALS Gives Chevron Scientists New Insights into Corrosion Resistance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Gives Chevron Scientists New Insights into Corrosion Resistance ALS Gives Chevron Scientists New Insights into Corrosion Resistance Print Thursday, 25 July 2013 13:44 In the...

  17. al envejecimiento poblacional: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AL Wongawallan AL Mt Tamborine Canungra Pimpama R Laheys Lookout Greenslade, Diana 5 -Hoffmann, Odile et Pedro Quintin, 1999, Organizacin social, dinmicas culturales e identidades...

  18. al azar rapd: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Statement, and Program of February 2005 Companion Workshop at Al Azar University, Egypt University of Kansas - KU ScholarWorks Summary: February 12, 2005 at Al Azhar...

  19. amplificado al azar: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Statement, and Program of February 2005 Companion Workshop at Al Azar University, Egypt University of Kansas - KU ScholarWorks Summary: February 12, 2005 at Al Azhar...

  20. al ni shape: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NiAl NANOLAMINATES . Open Access Theses and Dissertations Summary: ??To characterize the self-propagating, high-temperature exothermic alloying reactions of NiAl nanoscaled...

  1. al acceso parte: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hills landfill (Byrne et al. 1992; Gilbert et al. 1998143 1 INTRODUCTION Geosynthetic clay liners (GCLs) with geomembranes (GMs) placed on slopes as part of composite liner...

  2. The beta-decay of 22Al

    E-Print Network [OSTI]

    N. L. Achouri; F. de Oliveira Santos; M. Lewitowicz; B. Blank; J. Aysto; G. Canchel; S. Czajkowski; P. Dendooven; A. Emsallem; J. Giovinazzo; N. Guillet; A. Jokinen; A. M. Laird; C. Longour; K. Perajarvi; N. Smirnova; M. Stanoiu; J. C. Thomas

    2006-08-01T23:59:59.000Z

    In an experiment performed at the LISE3 facility of GANIL, we studied the decay of 22Al produced by the fragmentation of a 36Ar primary beam. A beta-decay half-life of 91.1 +- 0.5 ms was measured. The beta-delayed one- and two-proton emission as well as beta-alpha and beta-delayed gamma decays were measured and allowed us to establish a partial decay scheme for this nucleus. New levels were determined in the daughter nucleus 22Mg. The comparison with model calculations strongly favours a spin-parity of 4+ for the ground state of 22Al.

  3. ALS Reveals New State of Matter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del(ANL-IN-03-032)8Li (59AJ76) (See theDoctoral Fellowship inALS Reveals New StateALS

  4. Effect of 710 nm visible light irradiation on neurite outgrowth in primary rat cortical neurons following ischemic insult

    SciTech Connect (OSTI)

    Choi, Dong-Hee [Center for Neuroscience Research, SMART Institute of Advanced Biomedical Science, Konkuk University, Seoul (Korea, Republic of) [Center for Neuroscience Research, SMART Institute of Advanced Biomedical Science, Konkuk University, Seoul (Korea, Republic of); Department of Medical Science, Konkuk University School of Medicine, Seoul (Korea, Republic of); Lee, Kyoung-Hee; Kim, Ji-Hye; Kim, Moon Young [Center for Neuroscience Research, SMART Institute of Advanced Biomedical Science, Konkuk University, Seoul (Korea, Republic of)] [Center for Neuroscience Research, SMART Institute of Advanced Biomedical Science, Konkuk University, Seoul (Korea, Republic of); Lim, Jeong Hoon [Department of Rehabilitation Medicine, Konkuk University School of Medicine, Seoul (Korea, Republic of) [Department of Rehabilitation Medicine, Konkuk University School of Medicine, Seoul (Korea, Republic of); Rehabilitation Medicine, Division of Neurology, Department of Medicine, National University Hospital, National University Health System (Singapore); Lee, Jongmin, E-mail: leej@kuh.ac.kr [Center for Neuroscience Research, SMART Institute of Advanced Biomedical Science, Konkuk University, Seoul (Korea, Republic of) [Center for Neuroscience Research, SMART Institute of Advanced Biomedical Science, Konkuk University, Seoul (Korea, Republic of); Department of Rehabilitation Medicine, Konkuk University School of Medicine, Seoul (Korea, Republic of)

    2012-06-01T23:59:59.000Z

    Highlights: Black-Right-Pointing-Pointer 710 nm wavelength light (LED) has a protective effect in the stroke animal model. Black-Right-Pointing-Pointer We determined the effects of LED irradiation in vitro stroke model. Black-Right-Pointing-Pointer LED treatment promotes the neurite outgrowth through MAPK activation. Black-Right-Pointing-Pointer The level of synaptic markers significantly increased with LED treatment. Black-Right-Pointing-Pointer LED treatment protects cell death in the in vitro stroke model. -- Abstract: Objective: We previously reported that 710 nm Light-emitting Diode (LED) has a protective effect through cellular immunity activation in the stroke animal model. However, whether LED directly protects neurons suffering from neurodegeneration was entirely unknown. Therefore, we sought to determine the effects of 710 nm visible light irradiation on neuronal protection and neuronal outgrowth in an in vitro stroke model. Materials and methods: Primary cultured rat cortical neurons were exposed to oxygen-glucose deprivation (OGD) and reoxygenation and normal conditions. An LED array with a peak wavelength of 710 nm was placed beneath the covered culture dishes with the room light turned off and were irradiated accordingly. LED treatments (4 min at 4 J/cm{sup 2} and 50 mW/cm{sup 2}) were given once to four times within 8 h at 2 h intervals for 7 days. Mean neurite density, mean neurite diameter, and total fiber length were also measured after microtubule associated protein 2 (MAP2) immunostaining using the Axio Vision program. Synaptic marker expression and MAPK activation were confirmed by Western blotting. Results: Images captured after MAP2 immunocytochemistry showed significant (p < 0.05) enhancement of post-ischemic neurite outgrowth with LED treatment once and twice a day. MAPK activation was enhanced by LED treatment in both OGD-exposed and normal cells. The levels of synaptic markers such as PSD 95, GAP 43, and synaptophysin significantly increased with LED treatment in both OGD-exposed and normal cells (p < 0.05). Conclusion: Our data suggest that LED treatment may promote synaptogenesis through MAPK activation and subsequently protect cell death in the in vitro stroke model.

  5. Correlated Two-Electron Momentum Spectra for Strong-Field Nonsequential Double Ionization of He at 800 nm

    SciTech Connect (OSTI)

    Rudenko, A.; Ergler, Th.; Zrost, K.; Feuerstein, B.; Schroeter, C. D.; Moshammer, R.; Ullrich, J. [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany); Jesus, V. L. B. de [Centro Federal de Educacao Tecnologica de Quimica de Nilopolis/RJ, Rua Lucio Tavares 1045, Centro-Nilopolis-26530-060, Rio de Janeiro (Brazil)

    2007-12-31T23:59:59.000Z

    We report on a kinematically complete experiment on nonsequential double ionization of He by 25 fs 800 nm laser pulses at 1.5 PW/cm{sup 2}. The suppression of the recollision-induced excitation at this high intensity allows us to address in a clean way direct (e,2e) ionization by the recolliding electron. In contrast with earlier experimental results, but in agreement with various theoretical predictions, the two-electron momentum distributions along the laser polarization axis exhibit a pronounced V-shaped structure, which can be explained by the role of Coulomb repulsion and typical (e,2e) kinematics.

  6. Lithography-free sub-100nm nanocone array antireflection layer for low-cost silicon solar cell

    E-Print Network [OSTI]

    Xu, Zhida

    2014-01-01T23:59:59.000Z

    High density and uniformity sub-100nm surface oxidized silicon nanocone forest structure is created and integrated onto the existing texturization microstructures on photovoltaic device surface by a one-step high throughput plasma enhanced texturization method. We suppressed the broadband optical reflection on chemically textured grade-B silicon solar cells for up to 70.25% through this nanomanufacturing method. The performance of the solar cell is improved with the short circuit current increased by 7.1%, fill factor increased by 7.0%, conversion efficiency increased by 14.66%. Our method demonstrates the potential to improve the photovoltaic device performance with low cost high and throughput nanomanufacturing technology.

  7. ccsd00004518, Precipitation kinetics of Al 3 Zr and Al 3 Sc in

    E-Print Network [OSTI]

    , kinetics, aluminum alloys, cluster dynamics PACS: 64.60.Cn, 64.60.-i, 64.70.Kb, 64.75.+g 1 Introduction Transition elements are added to aluminum alloys so as to obtain small ordered precipitates and by this wayccsd­00004518, version 2 ­ 21 Mar 2005 Precipitation kinetics of Al 3 Zr and Al 3 Sc in aluminum

  8. Supra-Canonical 26Al/27Al and the Residence Time of CAIs in the

    E-Print Network [OSTI]

    Harrison, Mark

    . Laser ablation and whole-rock multiple- collector inductively coupled plasma-source mass spectrometry absolute 207Pb-206Pb ages of 4567.2 T 0.6 My (4). Here, we present new ul- traviolet (UV) laser ablation few to warrant revision of the canonical (26Al/27Al)o. We present new laser-ablation MC-ICPMS Mg

  9. Electronic circuits having NiAl and Ni.sub.3 Al substrates

    DOE Patents [OSTI]

    Deevi, Seetharama C. (Midlothian, VA); Sikka, Vinod K. (Oak Ridge, TN)

    1999-01-01T23:59:59.000Z

    An electronic circuit component having improved mechanical properties and thermal conductivity comprises NiAl and/or Ni.sub.3 Al, upon which an alumina layer is formed prior to applying the conductive elements. Additional layers of copper-aluminum alloy or copper further improve mechanical strength and thermal conductivity.

  10. I have never touched her: the body in Al-Ghazal Al-‘Udhri 

    E-Print Network [OSTI]

    Alharthi, Jokha Mohammed

    2011-02-09T23:59:59.000Z

    Al-ghazal al-‘udhri emerged as a remarkable literary genre in Arabic literature during the Umayyad period (7th-8th centuries CE). The leaders of this genre are famous poet-lovers who were known for their dramatic love ...

  11. Intersubband absorption in AlN/GaN/AlGaN coupled quantum wells

    SciTech Connect (OSTI)

    Driscoll, Kristina; Bhattacharyya, Anirban; Moustakas, Theodore D.; Paiella, Roberto; Zhou, Lin; Smith, David J. [Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary's Street, Boston, Massachusetts 02215 (United States); Department of Physics and School of Materials, Arizona State University, Tempe, Arizona 85287 (United States)

    2007-10-01T23:59:59.000Z

    AlN/GaN/AlGaN coupled quantum wells grown by molecular beam epitaxy have been developed and characterized via intersubband absorption spectroscopy. In these structures, an AlGaN layer of sufficiently low Al content is used to achieve strong interwell coupling without the need for ultrathin inner barriers. At the same time, AlN is used in the outer barriers to provide the large quantum confinement required for near-infrared intersubband transitions. The composition of the inner barriers also provides a continuously tunable parameter to control the coupling strength. Double intersubband absorption peaks are measured in each sample, at photon energies in good agreement with theoretical expectations.

  12. Lieth et al -p.1 Progress Report

    E-Print Network [OSTI]

    Lieth, J. Heinrich

    of the greenhouse system, such as inner air, soil surface and glass. It is also necessary to monitor cooling controlLieth et al - p.1 Progress Report covering 10/1/1999 - 12/31/1999 for project EISG program project be found in greenhouse systems. The greenhouse is a transparent structure, its primary energy source

  13. Ternary Dy-Er-Al magnetic refrigerants

    DOE Patents [OSTI]

    Gschneidner, K.A. Jr.; Takeya, Hiroyuki

    1995-07-25T23:59:59.000Z

    A ternary magnetic refrigerant material comprising (Dy{sub 1{minus}x}Er{sub x})Al{sub 2} for a magnetic refrigerator using the Joule-Brayton thermodynamic cycle spanning a temperature range from about 60K to about 10K, which can be adjusted by changing the Dy to Er ratio of the refrigerant. 29 figs.

  14. Ternary Dy-Er-Al magnetic refrigerants

    DOE Patents [OSTI]

    Gschneidner, Jr., Karl A. (Ames, IA); Takeya, Hiroyuki (Ibaraki, JP)

    1995-07-25T23:59:59.000Z

    A ternary magnetic refrigerant material comprising (Dy.sub.1-x Er.sub.x)Al.sub.2 for a magnetic refrigerator using the Joule-Brayton thermodynamic cycle spanning a temperature range from about 60K to about 10K, which can be adjusted by changing the Dy to Er ratio of the refrigerant.

  15. (12) United States Patent Vertes et al.

    E-Print Network [OSTI]

    Vertes, Akos

    (12) United States Patent Vertes et al. (54) THREE-DIMENSIONAL MOLECULAR IMAGING BY INFRARED LASER) ( *) Notice: Subject to any disclaimer, the term ofthis patent is extended or adjusted under 35 U.S.c. 154(b/282,287,288; 4361173 See application file for complete search history. (56) References Cited U.S. PATENT DOCUMENTS 6

  16. (12) United States Patent Vertes et al.

    E-Print Network [OSTI]

    Vertes, Akos

    (12) United States Patent Vertes et al. (54) LASERABLATION ELECTROSPRAY IONIZATION (LAESI) ( *) Notice: Subject to any disclaimer, the term ofthis patent is extended or adjusted under 35 U.S.C. 154(b) by 0 days. lbis patent is subject to a terminal dis- claimer. (21) Appl. No.: 131271,435 Oct. 12, 2011

  17. (12) United States Patent Vertes et al.

    E-Print Network [OSTI]

    Vertes, Akos

    (12) United States Patent Vertes et al. (54) LASER DESORPTION IONIZATION AND PEPTIDE SEQUENCING to any disclaimer, the term ofthis patent is extended or adjusted under 35 U.S.c. 154(b) by 1079 days application file for complete search history. References Cited U.S. PATENT DOCUMENTS 6,288,390 Bl 912001

  18. (12) United States Patent Geohegan et al.

    E-Print Network [OSTI]

    Geohegan, David B.

    (12) United States Patent Geohegan et al. US008540542B2 US 8,540,542 B2 Sep. 24, 2013 (10) Patent N0.: (45) Date of Patent: (54) TRANSPARENT CONDUCTIVE NANO-COMPOSITES (75) Inventors: David Bruce Research Foundation, Knoxville, TN (US) Notice: Subject to any disclaimer, the term ofthis patent

  19. (12) United States Patent Vertes et al.

    E-Print Network [OSTI]

    Vertes, Akos

    (12) United States Patent Vertes et al. (54) PROTEIN MICROSCOPE (75) Inventors: Akos Vertes, Reston patent is extended or adjusted under 35 U.S.c. 154(b) by 135 days. (21) Appl. No.: 111795,687 (22 1111111111111111111111111111111111111111111111111111111111111 16 US007735146B2 (10) Patent No.: (45) Date of Patent: US 7,735,146 B2 Jun. 8,2010 (56) References

  20. (12) United States Patent Grier et al.

    E-Print Network [OSTI]

    Grier, David

    (12) United States Patent Grier et al. US008791985B2 US 8,791,985 B2 Jul. 29, 2014 (10) Patent N0.: (45) Date of Patent: (54) (75) (73) (21) (22) (86) (87) (65) (60) (51) (52) TRACKING to any disclaimer, the term ofthis patent is extended or adjusted under 35 U.S.C. 154(b) by 744 days. 12

  1. Crawford et al.32 32 Introduction

    E-Print Network [OSTI]

    Crawford, Wayne

    and White, 2001; Fruehn et al., 2001; Martini and Bean, 2001; Hobbs, 2002; Fliedner and White, 2003; White to sub-basalt sediments almost everywhere where the water depth is greater than 0.9 km and in some if the water depth is 1 km or more. For the same water depths, if the depth limits of the sub-basalt sediments

  2. Near-infrared wavelength intersubband transitions in GaN/AlN short period superlattices

    SciTech Connect (OSTI)

    DeCuir, E. A. Jr.; Fred, Emil; Passmore, B. S.; Muddasani, A.; Manasreh, M. O.; Xie Jinqiao; Morkoc, Hadis; Ware, M. E.; Salamo, G. J. [Department of Electrical Engineering, University of Arkansas, 3217 Bell Engineering Center, Fayetteville, Arkansas 72701 (United States); Department of Electrical and Computer Engineering, Virginia Commonwealth University, 601 W. Main St., Richmond, Virginia 23284-3072 (United States); Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States)

    2006-10-09T23:59:59.000Z

    Intersubband transitions in GaN/AlN short period superlattices prepared by molecular beam epitaxy were investigated using the optical absorption technique. The peak position wavelengths of these transitions are found to span the spectral range of 1.35-2.90 {mu}m for samples cut into 45 deg. waveguides with GaN quantum well thicknesses ranging between 1.70 and 2.41 nm. The Fermi energy levels are estimated from the carrier concentrations, which were measured using an electrochemical capacitance-voltage profiler. The well widths were inferred from comparing the measured peak position energy of the intersubband transitions and the bound state energy levels calculated using the transfer matrix method.

  3. Silica–silica Polyimide Buffered Optical Fibre Irradiation and Strength Experiment at Cryogenic Temperatures for 355 nm Pulsed Lasers

    E-Print Network [OSTI]

    Takala, E; Bordini, B; Bottura, L; Bremer, J; Rossi, L

    2012-01-01T23:59:59.000Z

    A controlled UV-light delivery system is envisioned to be built in order to study the stability properties of superconducting strands. The application requires a wave guide from room temperature to cryogenic temperatures. Hydrogen loaded and unloaded polyimide buffered silica–silica 100 microm core fibres were tested at cryogenic temperatures. A thermal stress test was done at 1.9 K and at 4.2 K which shows that the minimal mechanical bending radius for the fibre can be 10 mm for testing (transmission was not measured). The cryogenic transmission loss was measured for one fibre to assess the magnitude of the transmission decrease due to microbending that takes place during cooldown. UV-irradiation degradation measurements were done for bent fibres at 4.2 K with a deuterium lamp and 355 nm pulsed lasers. The irradiation tests show that the fibres have transmission degradation only for wavelengths smaller than 330 nm due to the two photon absorption. The test demonstrates that the fibres are suitable for the ...

  4. Seedless Polyol Synthesis and CO Oxidation Activity of Monodisperse (111) and (100)-Oriented Rhodium Nanocrystals in Sub-10 nm Sizes

    SciTech Connect (OSTI)

    Zhang, Yawen; Grass, Michael E.; Huang, Wenyu; Somorjai, Gabor A.

    2010-03-15T23:59:59.000Z

    Monodisperse sub-10 nm (6.5 nm) sized Rh nanocrystals with (111) and (100) surface structures were synthesized by a seedless polyol reduction in ethylene glycol, with poly(vinylpyrrolidone) as a capping ligand. When using [Rh(Ac){sub 2}]{sub 2} as the metal precursor, (111)-oriented Rh nanopolyhedra containing 76% (111)-twined hexagons (in 2D projection) were obtained; whereas, when employing RhCl{sub 3} as the metal precursor in the presence of alkylammonium bromide, such as tetramethylammonium bromide and trimethyl(tetradecyl)ammonium bromide, (100)-oriented Rh nanocubes were obtained with 85% selectivity. The {l_brace}100{r_brace} faces of the Rh nanocrystals are stabilized by chemically adsorbed Br{sup -} ions from alkylammonium bromides, which led to (100)-oriented nanocubes. Monolayer films of the (111)-oriented Rh nanopolyhedra and (100)-oriented Rh nanocubes were deposited on silicon wafers in a Langmuir-Blodgett trough to make model 2D nanoarray catalysts. These nanocatalysts were active for CO oxidation by O{sub 2}, and the turnover frequency was independent of nanoparticle shape, consistent with that previously observed for Rh(111) and Rh(100) single crystals.

  5. InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy

    SciTech Connect (OSTI)

    Gacevic, Z.; Fernandez-Garrido, S.; Calleja, E. [ISOM, Universidad Politecnica de Madrid, Avda Complutense s/n, 28040 Madrid (Spain); Hosseini, D.; Peiro, F. [Departament d'Electronica, LENS-MIND-IN2UB, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Estrade, S. [Departament d'Electronica, LENS-MIND-IN2UB, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); TEM-MAT, SCT-UB, Sole i Sabaris 1, 08028 Barcelona (Spain)

    2010-12-01T23:59:59.000Z

    We report on molecular beam epitaxy growth and characterization of ten-period lattice-matched InAlN/GaN distributed Bragg reflectors (DBRs), with peak reflectivity centered around 400 nm. Thanks to the well tuned ternary alloy composition, crack-free surfaces have been obtained, as confirmed by both optical and transmission electron microscopy (TEM). Their good periodicity and well-defined interfaces have been confirmed by both x-ray diffraction and TEM measurements. Peak reflectivity values as high as 60% with stop bands of 30 nm have been demonstrated. Optical measurements revealed that discrepancy between the obtained (60%) and the theoretically expected ({approx}75%) reflectivity is a consequence of significant residual absorption ({approx}35%). TEM measurements revealed the coexistence of zinc-blende and wurtzite phases, as well as planar defects, mainly in GaN. These defects are suggested as the potential source of the undesired absorption and/or scattering effects that lowered the DBRs' peak reflectivity.

  6. Novel Pt/Mg(In)(Al)O catalysts for ethane and propane dehydrogenation

    SciTech Connect (OSTI)

    Sun, Pingping; Siddiqi, Georges; Vining, William C.; Chi, Miaofang; Bell, Alexis T. (UCB); (ORNL)

    2011-10-28T23:59:59.000Z

    Catalysts for the dehydrogenation of light alkanes were prepared by dispersing Pt on the surface of a calcined hydrotalcite-like support containing indium, Mg(In)(Al)O. Upon reduction in H{sub 2} at temperatures above 673 K, bimetallic particles of PtIn are observed by TEM, which have an average diameter of 1 nm. Analysis of Pt LIII-edge extended X-ray absorption fine structure (EXAFS) data shows that the In content of the bimetallic particles increases with increasing bulk In/Pt ratio and reduction temperature. Pt LIII-edge X-ray absorption near edge structure (XANES) indicates that an increasing donation of electronic charge from In to Pt occurs with increasing In content in the PtIn particles. The activity and selectivity of the Pt/Mg(In)(Al)O catalysts for ethane and propane dehydrogenation reactions are strongly dependent on the bulk In/Pt ratio. For both reactants, maximum activity was achieved for a bulk In/Pt ratio of 0.48, and at this In/Pt ratio, the selectivity to alkene was nearly 100%. Coke deposition was observed after catalyst use for either ethane or propane dehydrogenation, and it was observed that the alloying of Pt with In greatly reduced the amount of coke deposited. Characterization of the deposit by Raman spectroscopy indicates that the coke is present as highly disordered graphite particles <30 nm in diameter. While the amount of coke deposited during ethane and propane dehydrogenation are comparable, the effects on activity are dependent on reactant composition. Coke deposition had no effect on ethane dehydrogenation activity, but caused a loss in propane dehydrogenation activity. This difference is attributed to the greater ease with which coke produced on the surface of PtIn nanoparticles migrates to the support during ethane dehydrogenation versus propane dehydrogenation.

  7. Metastable phase boundaries of quasicrystalline phases. [Al-Mn; Al-Ru

    SciTech Connect (OSTI)

    Follstaedt, D.M.; Knapp, J.A.

    1987-01-01T23:59:59.000Z

    The melting curve (T/sub 0/) of the metastable icosahedral phase and the liquidus of the decagonal phase of Al-Mn have been obtained for 14 to 22 at. % Mn. Icosahedral Al-Mn has a congruent melting point of 910 +- 20/sup 0/C at 20 at. % Mn, and melts approx.30/sup 0/C lower than crystalline compounds with the same composition. Icosahedral Al/sub 82/Ru/sub 18/ was determined to melt at 1260 +- 30/sup 0/C. These results were obtained by forming single-phase icosahedral alloys with ion beam mixing, and by rapid heating to accurately known temperatures with electron beams.

  8. Re-thinking highest and best use : implementing smart development in support of smart growth : a case study in Santa Fe, NM

    E-Print Network [OSTI]

    Balkcom, Jennifer K

    2006-01-01T23:59:59.000Z

    This paper answers the questions "where to develop?", "for whom to develop?", and "what to develop?" from a double bottom line perspective of profit making and social benefit, using a 3-acre property in Santa Fe, NM as an ...

  9. Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries

    DOE Patents [OSTI]

    Carlisle, John A.; Auciello, Orlando; Birrell, James

    2006-10-31T23:59:59.000Z

    An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.

  10. Generation of 30-50 nm Structures Using Easily Fabricated, Composite Teri W. Odom, Venkat R. Thalladi, J. Christopher Love, and George M. Whitesides*

    E-Print Network [OSTI]

    Prentiss, Mara

    of tens of nanometers are useful in ultradense data storage, subwavelength optics, and devices This communication describes a method to generate simple nanostructures with critical dimensions down to 30 nm, over

  11. Resonant cavity-enhanced photosensitivity in As[subscript 2]S[subscript 3] chalcogenide glass at 1550 nm telecommunication wavelength

    E-Print Network [OSTI]

    Hu, Juejun

    We report the first (to our knowledge) experimental observation of resonant cavity-enhanced photosensitivity in As[subscript 2]S[subscript 3] chalcogenide glass film at 1550?nm telecommunication wavelength. The measured ...

  12. UN TRAIT POLITIQUE DU IIE L'PTRE DE UBAYD ALLH B. AL-ASAN AL-ANBAR

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Ubayd Allh b. al-asan al-Anbar (m. 168/785) à lintention du calife abbside al-Mahd (158/775-169/785). À la littérature de « miroirs des princes », voir notamment C.E. Bosworth, « Naat al-mulk », EI, VII, p

  13. The evolution of Al-Azhar Street, Al-Qahira, Egypt

    E-Print Network [OSTI]

    Elkatsha, Markus Fawzy Fahmy

    2000-01-01T23:59:59.000Z

    The historic quarter of Cairo, al-Qahira, is going through a period intense transformation that is threatening the physical environment as well as the social and economic fabric of the city. The transformations taking place ...

  14. Status of the AlCap experiment

    E-Print Network [OSTI]

    Litchfield, R Phillip

    2015-01-01T23:59:59.000Z

    The AlCap experiment is a joint project between the COMET and Mu2e collaborations. Both experiments intend to look for the lepton-flavour violating conversion $\\mu + A \\rightarrow e + A$, using tertiary muons from high-power pulsed proton beams. In these experiments the products of ordinary muon capture in the muon stopping target are an important concern, both in terms of hit rates in tracking detectors and radiation damage to equipment. The goal of the AlCap experiment is to provide precision measurements of the products of nuclear capture on Aluminium, which is the favoured target material for both COMET and Mu2e. The results will be used for optimising the design of both conversion experiments, and as input to their simulations. Data was taken in December 2013 and is currently being analysed.

  15. Status of the AlCap experiment

    E-Print Network [OSTI]

    R. Phillip Litchfield

    2015-01-20T23:59:59.000Z

    The AlCap experiment is a joint project between the COMET and Mu2e collaborations. Both experiments intend to look for the lepton-flavour violating conversion $\\mu + A \\rightarrow e + A$, using tertiary muons from high-power pulsed proton beams. In these experiments the products of ordinary muon capture in the muon stopping target are an important concern, both in terms of hit rates in tracking detectors and radiation damage to equipment. The goal of the AlCap experiment is to provide precision measurements of the products of nuclear capture on Aluminium, which is the favoured target material for both COMET and Mu2e. The results will be used for optimising the design of both conversion experiments, and as input to their simulations. Data was taken in December 2013 and is currently being analysed.

  16. Observable Proxies For 26 Al Enhancement

    SciTech Connect (OSTI)

    Fryer, Christopher L [Los Alamos National Laboratory; Young, Patrick A [Los Alamos National Laboratory; Ellinger, Carola I [ASU; Arnett, William D [UNIV ARIZONA

    2008-01-01T23:59:59.000Z

    We consider the cospatial production of elements in supernova explosions to find observationally detectable proxies for enhancement of {sup 26}Al in supernova ejecta and stellar systems. Using four progenitors we explore a range of 1D explosions at different energies and an asymmetric 3D explosion. We find that the most reliable indicator of the presence of {sup 26}Al in unmixed ejecta is a very low S/Si ratio ({approx} 0.05). Production of N in O/S/Si-rich regions is also indicative. The biologically important element P is produced at its highest abundance in the same regions. Proxies should be detectable in supernova ejecta with high spatial resolution multi wavelength observations, but the small absolute abundance of material injected into a proto-planetary disk makes detection unlikely in existing or forming stellar/planetary systems.

  17. The 846 nm A' 32; +X 3Z; band system of jet-cooled V, Eileen M. Spain, Jane M. Behm,a) and Michael D. Morse

    E-Print Network [OSTI]

    Morse, Michael D.

    The 846 nm A' 32; +X 3Z; band system of jet-cooled V, Eileen M. Spain, Jane M. Behm,a) and Michael October 1991; accepted 4 November 1991) The 846 nm band system of jet-cooled 5'V2 has been recorded using resonant two-photon ionization spectroscopy, and is assigned as the A '38; +X `2; band system. Both the w

  18. Room-temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy

    SciTech Connect (OSTI)

    Wakao, K.; Nishi, H.; Kusunoki, T.; Isozumi, S.; Ohsaka, S.

    1984-06-01T23:59:59.000Z

    InGaAsP/InGaP lasers emitting at 724--727 nm have been fabricated on GaAs substrates using liquid phase epitaxy. The threshold current is reduced to 8 kA/cm/sup 2/ by thinning the active layer. Room-temperature cw operation is achieved for the first time in the lasing wavelength range below 760 nm in this quaternary system.

  19. United States Patent [19] Carlson et al.

    E-Print Network [OSTI]

    Adelson, Edward

    United States Patent [19] Carlson et al. [11] Patent Number: 4,523,230 [45] Date of Patent: Jun. 11 ............. 358/160, 163; 166; 167, 358/905, 21 R, 36; 382/49, 54 [56] References Cited U.S. PATENT DOCUMENTS 4 signals. 24 Claims, 8 Drawing Figures #12;U.S. Patent Jun. 11, 1985 Sheet 1 of 4 4,523,230 #12;U.S. Patent

  20. United States Patent [19] Burt et al.

    E-Print Network [OSTI]

    Adelson, Edward

    United States Patent [19] Burt et al. [11] Patent Number: 4 , 6 98, 84 3 [45] Date of Patent: Oct, 43, 49, 50, 54, 55 [56] References Cited U.S. PATENT DOCUMENTS 3,737,855 6/1973 Cutaia.S. Patent Oct. 6, 1987 Sheet 1 of 3 4,698,843 #12;U.S. Patent Oct. 6, 1987 Sheet 2 of 3 4,698,843 #12;U

  1. Luminescence properties of a blue-emitting phosphor: (Sr{sub 1?x}Eu{sub x})Si{sub 9}Al{sub 19}ON{sub 31} (0

    SciTech Connect (OSTI)

    Liu, Lihong [Structural and Functional Integration of Ceramics Group, The Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201 (China); Xie, Rong-Jun, E-mail: XIE.Rong-Jun@nims.go.jp [Sialon Group, Sialon Unit, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044 (Japan); Hirosaki, Naoto; Dierre, Benjamin [Sialon Group, Sialon Unit, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044 (Japan); Sekiguchi, Takashi [Advanced Electronic Materials Center, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044 (Japan)

    2013-11-15T23:59:59.000Z

    Blue-emitting Sr{sub 1?x}Eu{sub x}Si{sub 9}Al{sub 19}ON{sub 31} phosphors were synthesized at 1800 °C for 2 h under 1 MPa N{sub 2} by using the gas-pressure sintering method (GPS). The microstructure, photoluminescence (PL) properties of the prepared phosphors were investigated. Under the 290 nm excitation, broad PL emission bands with peak positions at 448–490 nm were detected. The concentration quenching was not observed owing to the large distance betweenEu{sup 2+} ions that made the nonradiative energy transfer between neighboring Eu{sup 2+} ions difficult. The blue phosphor generally showed a small thermal quenching at low Eu{sup 2+} concentrations. The absorption and external quantum efficiency of the synthesized Sr{sub 0.5}Eu{sub 0.5}Si{sub 9}Al{sub 19}ON{sub 31} were 85% and 62% upon the 365 nm excitation, respectively. The interesting PL results indicate that Sr{sub 1?x}Eu{sub x}Si{sub 9}Al{sub 19}ON{sub 31} has great potentials as a blue phosphor for white LEDs applications. - Graphical abstract: Sr{sub 0.7}Eu{sub 0.3}Si{sub 9}Al{sub 19}ON{sub 31} gives blue-emitting at 471 nm. Excitation spectrum is composed of five bands in the range of 250–450 nm, which are matching well with emission wavelength of UV LEDs. Display Omitted - Highlights: • Blue-emitting Sr{sub 1?x}Eu{sub x}Si{sub 9}Al{sub 19}ON{sub 31} phosphors were synthesized by gas-pressure sintering method. • The concentration quenching was not observed in this phosphor. • This blue phosphor generally showed a small thermal quenching at low Eu{sup 2+} concentrations. • The absorption and external quantum efficiency of the synthesized Sr{sub 0.5}Eu{sub 0.5}Si{sub 9}Al{sub 19}ON{sub 31} were 85% and 62% upon the 365 nm excitation.

  2. Frequency stabilization of a 1083 nm fiber laser to {sup 4}He transition lines with optical heterodyne saturation spectroscopies

    SciTech Connect (OSTI)

    Gong, W.; Peng, X., E-mail: xiangpeng@pku.edu.cn; Li, W.; Guo, H., E-mail: hongguo@pku.edu.cn [State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Center for Quantum Information Technology, and Center for Computational Science and Engineering (CCSE), Peking University, Beijing 100871 (China)

    2014-07-15T23:59:59.000Z

    Two kinds of optical heterodyne saturation spectroscopies, namely, frequency modulation spectroscopy (FMS) and modulation transfer spectroscopy (MTS), are demonstrated for locking a fiber laser to the transition lines of metastable {sup 4}He atoms around 1083 nm. The servo-loop error signals of FMS and MTS for stabilizing laser frequency are optimized by studying the dependence of the peak-to-peak amplitude and slope on the optical power of pump and probe beams. A comparison of the stabilization performances of FMS/MTS and polarization spectroscopy (PS) is presented, which shows that MTS exhibits relatively superior performance with the least laser frequency fluctuation due to its flat-background dispersive signal, originated from the four-wave mixing process. The Allan deviation of the stabilized laser frequency is 5.4 × 10{sup ?12}@100 s with MTS for data acquired in 1000 s, which is sufficiently applicable for fields like laser cooling, optical pumping, and optical magnetometry.

  3. Pressure shift and broadening of the 254-nm intercombination line of mercury by N{sub 2}

    SciTech Connect (OSTI)

    Jacobs, James P.; Warrington, R. Bruce [Department of Physics and Astronomy, University of Montana, Missoula, Montana 59812, USA (United States); Department of Physics, FM-15, University of Washington, Seattle, Washington 98195, USA (United States)

    2003-09-01T23:59:59.000Z

    We have used laser absorption spectroscopy to study the collisional broadening and shift of the 254-nm 6 {sup 1}S{sub 0}{yields}6 {sup 3}P{sub 1} intercombination line of Hg in the presence of N{sub 2} for pressures below 400 Torr. This study comprises the first measurements of the proportionality constants for pressure broadening and shift of Hg due to N{sub 2} in this pressure range, and the first high-precision measurements of these pressure effects on Hg for any foreign gas. We obtain -2.54(2) MHz/Torr for the shift and 9.01(4) MHz/Torr for the broadening (full width at half maximum) at 21 degree sign C (95% confidence interval). These results are important for ongoing experiments using optical pumping of mercury in tests of fundamental symmetries, as well as for characterization of interatomic forces and tests of the theory of collisional line broadening.

  4. A comparative wear study on Al-Li and Al-Li/SiC composite

    SciTech Connect (OSTI)

    Okumus, S. Cem, E-mail: cokumus@sakarya.edu.tr; Karslioglu, Ramazan, E-mail: cokumus@sakarya.edu.tr; Akbulut, Hatem, E-mail: cokumus@sakarya.edu.tr [Sakarya University Engineering Faculty, Department of Metallurgical and Materials Engineering, Esentepe Campus, 54187, Sakarya (Turkey)

    2013-12-16T23:59:59.000Z

    Aluminum-lithium based unreinforced (Al-8090) alloy and Al-8090/SiCp/17 vol.% metal matrix composite produced by extrusion after spray co-deposition. A dry ball-on disk wear test was carried out for both alloy and composite. The tests were performed against an Al{sub 2}O{sub 3} ball, 10 mm in diameter, at room temperature and in laboratory air conditions with a relative humidity of 40-60%. Sliding speed was chosen as 1.0 ms{sup ?1} and normal loads of 1.0, 3.0 and 5.0 N were employed at a constant sliding distance of 1000 m. The wear damage on the specimens was evaluated via measurement of wear depth and diameter. Microstructural and wear characterization was carried out via scanning electron microscopy (SEM). The results showed that wear loss of the Al-8090/SiC composite was less than that of the Al-8090 matrix alloy. Plastic deformation observed on the wear surface of the composite and the matrix alloy, and the higher the applied load the greater the plastic deformation. Scanning electron microscopy examinations of wear tracks also reveal that delamination fracture was the dominant wear mechanism during the wear progression. Friction coefficient was maximum at the low applied load in the case of the Al-8090/SiC composite while a gradual increase was observed with applied load for the matrix alloy.

  5. Viability of Cladosporium herbarum spores under 157 nm laser and vacuum ultraviolet irradiation, low temperature (10 K) and vacuum

    SciTech Connect (OSTI)

    Sarantopoulou, E., E-mail: esarant@eie.gr; Stefi, A.; Kollia, Z.; Palles, D.; Cefalas, A. C. [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vassileos Constantinou Avenue, Athens 11635 (Greece); Petrou, P. S.; Bourkoula, A.; Koukouvinos, G.; Kakabakos, S. [N.C.S.R. “Demokritos”, Institute for Nuclear and Radiological Sciences, Energy, Technology and Safety, Patriarchou Gregoriou Str. Aghia Paraskevi, Athens 15310 (Greece); Velentzas, A. D. [University of Athens, Faculty of Biology, Department of Cell Biology and Biophysics, Athens 15784 (Greece)

    2014-09-14T23:59:59.000Z

    Ultraviolet photons can damage microorganisms, which rarely survive prolonged irradiation. In addition to the need for intact DNA, cell viability is directly linked to the functionality of the cell wall and membrane. In this work, Cladosporium herbarum spore monolayers exhibit high viability (7%) when exposed to 157 nm laser irradiation (412 kJm?²) or vacuum-ultraviolet irradiation (110–180 nm) under standard pressure and temperature in a nitrogen atmosphere. Spore viability can be determined by atomic-force microscopy, nano-indentation, mass, ?-Raman and attenuated reflectance Fourier-transform far-infrared spectroscopies and DNA electrophoresis. Vacuum ultraviolet photons cause molecular damage to the cell wall, but radiation resistance in spores arises from the activation of a photon-triggered signaling reaction, expressed via the exudation of intracellular substances, which, in combination with the low penetration depth of vacuum-ultraviolet photons, shields DNA from radiation. Resistance to phototoxicity under standard conditions was assessed, as was resistance to additional environmental stresses, including exposure in a vacuum, under different rates of change of pressure during pumping time and low (10 K) temperatures. Vacuum conditions were far more destructive to spores than vacuum-ultraviolet irradiation, and UV-B photons were two orders of magnitude more damaging than vacuum-ultraviolet photons. The viability of irradiated spores was also enhanced at 10 K. This work, in addition to contributing to the photonic control of the viability of microorganisms exposed under extreme conditions, including decontamination of biological warfare agents, outlines the basis for identifying bio-signaling in vivo using physical methodologies.

  6. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)] [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)] [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

    2013-11-11T23:59:59.000Z

    AlGaN/GaN heterostructure field effect transistors with a 150?nm thick GaN channel within stacked Al{sub x}Ga{sub 1?x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60?W m{sup ?1} K{sup ?1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  7. Length-scale dependent mechanical properties of Al-Cu eutectic alloy: Molecular dynamics based model and its experimental verification

    SciTech Connect (OSTI)

    Tiwary, C. S., E-mail: cst.iisc@gmail.com; Chattopadhyay, K. [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India); Chakraborty, S.; Mahapatra, D. R. [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India)

    2014-05-28T23:59:59.000Z

    This paper attempts to gain an understanding of the effect of lamellar length scale on the mechanical properties of two-phase metal-intermetallic eutectic structure. We first develop a molecular dynamics model for the in-situ grown eutectic interface followed by a model of deformation of Al-Al{sub 2}Cu lamellar eutectic. Leveraging the insights obtained from the simulation on the behaviour of dislocations at different length scales of the eutectic, we present and explain the experimental results on Al-Al{sub 2}Cu eutectic with various different lamellar spacing. The physics behind the mechanism is further quantified with help of atomic level energy model for different length scale as well as different strain. An atomic level energy partitioning of the lamellae and the interface regions reveals that the energy of the lamellae core are accumulated more due to dislocations irrespective of the length-scale. Whereas the energy of the interface is accumulated more due to dislocations when the length-scale is smaller, but the trend is reversed when the length-scale is large beyond a critical size of about 80?nm.

  8. Electric-field-dependent electroreflectance spectra of visible-band-gap (InAlGa)P quantum-well structures

    SciTech Connect (OSTI)

    Fritz, I.J.; Blum, O.; Schneider, R.P. Jr.; Howard, A.J.; Follstaedt, D.M. (Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States))

    1994-04-04T23:59:59.000Z

    We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 [degree]C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6[degree] towards P(111)[r angle][l angle]111[r angle]A, consist of nominally undoped MQWs surrounded by doped In[sub 0.49]Al[sub 0.51]P cladding layers to form [ital p]-[ital i]-[ital n] diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In[sub 0.49]Ga[sub 0.51]P/In[sub 0.49](Al[sub 0.5]Ga[sub 0.5])[sub 0.51]P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for visible-wavelength electro-optic modulator applications.

  9. Pulsed laser deposition of AlMgB14 thin films

    SciTech Connect (OSTI)

    Russell, Alan; Bastawros, Ashraf; Tan, Xiaoli

    2008-11-18T23:59:59.000Z

    Hard, wear-resistant coatings of thin film borides based on AlMgB{sub 14} have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB{sub 14} used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB{sub 14} has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB{sub 14} films. Processing methods to eliminate large particles on the surface of the AlMgB{sub 14} films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel substrates, assessed using the Rockwell C indentation adhesion test, was found to be substantially improved by the deposition of a titanium interlayer, but unaffected by increasing the temperature of the substrates. The titanium was found to improve the adhesion strength of the films because it reacted with both the steel and the AlMgB{sub 14} compound to form new compounds. Ultimately, it was concluded that the films with the best properties were produced with a femtosecond pulsed laser and were deposited on top of a titanium interlayer to improve the thin film adhesion.

  10. Sandia Corporation (Albuquerque, NM)

    DOE Patents [OSTI]

    Diver, Richard B. (Albuquerque, NM)

    2010-02-23T23:59:59.000Z

    A Theoretical Overlay Photographic (TOP) alignment method uses the overlay of a theoretical projected image of a perfectly aligned concentrator on a photographic image of the concentrator to align the mirror facets of a parabolic trough solar concentrator. The alignment method is practical and straightforward, and inherently aligns the mirror facets to the receiver. When integrated with clinometer measurements for which gravity and mechanical drag effects have been accounted for and which are made in a manner and location consistent with the alignment method, all of the mirrors on a common drive can be aligned and optimized for any concentrator orientation.

  11. Abrviations NM Nantes Mtropole

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Premier week-end de formation WE2 Deuxième week-end d'investigation WE3 Troisième week-end de délibération

  12. Sandia Corporation (Albuquerque, NM)

    DOE Patents [OSTI]

    Ewsuk, Kevin G. (Albuquerque, NM); Arguello, Jr., Jose G. (Albuquerque, NM)

    2006-01-31T23:59:59.000Z

    A method of designing a primary geometry, such as for a forming die, to be used in a powder pressing application by using a combination of axisymmetric geometric shapes, transition radii, and transition spaces to simulate the geometry where the shapes can be selected from a predetermined list or menu of axisymmetric shapes and then developing a finite element mesh to represent the geometry. This mesh, along with material properties of the component to be designed and powder, is input to a standard deformation finite element code to evaluate the deformation characteristics of the component being designed. The user can develop the geometry interactively with a computer interface in minutes and execute a complete analysis of the deformation characteristics of the simulated component geometry.

  13. Short-period superlattices of AlN/Al{sub 0.08}Ga{sub 0.92}N grown on AlN substrates

    SciTech Connect (OSTI)

    Nikishin, S.A.; Borisov, B.A.; Chandolu, A.; Kuryatkov, V.V.; Temkin, H.; Holtz, M.; Mokhov, E.N.; Makarov, Yu.; Helava, H. [Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409-3102 (United States); Nano Tech Center/Department of Physics, Texas Tech University, Lubbock, Texas 79409 (United States); Fox Group Inc., 1154 Stealth Street, Livermore, California 94550 (United States)

    2004-11-08T23:59:59.000Z

    High-quality short-period superlattices of AlN/Al{sub 0.08}Ga{sub 0.92}N have been grown by gas-source molecular-beam epitaxy with ammonia on Al face of AlN (0001) substrates. A significant reduction was achieved in the dislocation density, down to 3x10{sup 8} cm{sup -2}. Complete removal of residual Al{sub 2}O{sub 3} surface oxide is needed in order to obtain low dislocation density in homoepitaxy on AlN. We show that the presence of Al{sub 2}O{sub 3} islands with the surface coverage as low as 0.2% results in increased dislocation density.

  14. Al-Ca and Al-Fe metal-metal composite strength, conductivity, and microstructure relationships

    SciTech Connect (OSTI)

    Kim, Hyong June

    2011-12-01T23:59:59.000Z

    Deformation processed metal-metal composites (DMMC’s) are composites formed by mechanical working (i.e., rolling, swaging, or wire drawing) of two-phase, ductile metal mixtures. Since both the matrix and reinforcing phase are ductile metals, the composites can be heavily deformed to reduce the thickness and spacing of the two phases. Recent studies have shown that heavily drawn DMMCs can achieve anomalously high strength and outstanding combinations of strength and conductivity. In this study, Al-Fe wire composite with 0.07, 0.1, and 0.2 volume fractions of Fe filaments and Al-Ca wire composite with 0.03, 0.06, and 0.09 volume fractions of Ca filaments were produced in situ, and their mechanical properties were measured as a function of deformation true strain. The Al-Fe composites displayed limited deformation of the Fe phase even at high true strains, resulting in little strengthening effect in those composites. Al-9vol%Ca wire was deformed to a deformation true strain of 13.76. The resulting Ca second-phase filaments were deformed to thicknesses on the order of one micrometer. The ultimate tensile strength increased exponentially with increasing deformation true strain, reaching a value of 197 MPa at a true strain of 13.76. This value is 2.5 times higher than the value predicted by the rule of mixtures. A quantitative relationship between UTS and deformation true strain was determined. X-ray diffraction data on transformation of Al + Ca microstructures to Al + various Al-Ca intermetallic compounds were obtained at the Advanced Photon Source at Argonne National Laboratory. Electrical conductivity was measured over a range of true strains and post-deformation heat treatment schedules.

  15. TRANSMISSION ELECTRON MICROSCOPY OF Al-RICH SILICATE STARDUST FROM ASYMPTOTIC GIANT BRANCH STARS

    SciTech Connect (OSTI)

    Vollmer, Christian [Institute for Mineralogy, University of Muenster, Correnssstr. 24, D-48149 Muenster (Germany); Hoppe, Peter [Max Planck Institute for Chemistry, Particle Chemistry Department, Hahn-Meitner-Weg 1, D-55128 Mainz (Germany); Brenker, Frank E., E-mail: christian.vollmer@wwu.de [Institute of Geoscience/Mineralogy, Goethe-University Frankfurt, Altenhoeferallee 1, D-60438 Frankfurt (Germany)

    2013-05-20T23:59:59.000Z

    We report on transmission electron microscopy (TEM) investigations of two mineralogically unusual stardust silicates to constrain their circumstellar condensation conditions. Both grains were identified by high spatial resolution nano secondary ion mass spectrometry (NanoSIMS) in the Acfer 094 meteorite, one of the most pristine carbonaceous chondrites available for study. One grain is a highly crystalline, highly refractory (Fe content < 0.5 at%), structurally undisturbed orthopyroxene (MgSiO{sub 3}) with an unusually high Al content (1.8 {+-} 0.5 at%). This is the first TEM documentation of a single crystal pyroxene within the complete stardust silicate data set. We interpret the microstructure and chemistry of this grain as being a direct condensate from a gas of locally non-solar composition (i.e., with a higher-than-solar Al content and most likely also a lower-than-solar Mg/Si ratio) at (near)-equilibrium conditions. From the overabundance of crystalline olivine (six reported grains to date) compared to crystalline pyroxene (only documented as a single crystal in this work) we infer that formation of olivine over pyroxene is favored in circumstellar environments, in agreement with expectations from condensation theory and experiments. The second stardust silicate consists of an amorphous Ca-Si rich material which lacks any crystallinity based on TEM observations in which tiny (<20 nm) hibonite nanocrystallites are embedded. This complex assemblage therefore attests to the fast cooling and rapidly changing chemical environments under which dust grains in circumstellar shells form.

  16. Comparison of plasma chemistries for inductively coupled plasma etching of InGaAlP alloys

    SciTech Connect (OSTI)

    Hong, J.; Lee, J.W.; Abernathy, C.R.; Lambers, E.S.; Pearton, S.J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Shul, R.J. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Hobson, W.S. [Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)] [Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)

    1998-05-01T23:59:59.000Z

    Two plasma chemistries, i.e., CH{sub 4}/H{sub 2}/Ar and Cl{sub 2}/Ar, were compared for the etching of InGaP, AlInP, and AlGaP under inductively coupled plasma (ICP) conditions. While the etching with CH{sub 4}/H{sub 2}/Ar discharges appears to be ion driven, Cl{sub 2}/Ar discharges showed an additional strong chemical enhancement. The highest etch rate ({approximately}1 {mu}m/min) for InGaP was achieved at high ICP source power ({ge}750 W) with the Cl{sub 2}/Ar chemistry. Cl{sub 2}/Ar discharges provided very smooth surfaces in all three materials with root-mean-square roughness measured by atomic force microscopy around 2 nm. This result may be due to the efficient ion-assisted product desorption in this chemistry. The etched near-surface region of InGaP ({approximately}100 {Angstrom}) with Cl{sub 2}/Ar maintained almost the same stoichiometry as that of the unetched control. By contrast, the CH{sub 4}/H{sub 2}/Ar plasma chemistry produced somewhat rougher surfaces and depletion of phosphorous (P) from the surface of InGaP. {copyright} {ital 1998 American Vacuum Society.}

  17. Table 1 -ESTIMATED REDUCTION IN 1985 COTTON YIELDS RESULTING FROM INSECTDAMAGE TOTAL YIELD 13,622 bales INSECTS Loss in AL AZ AR CA FL GA LA MS MO NM NC OK SC TN TX VA No.

    E-Print Network [OSTI]

    Ray, David

    Average cost for all states nTotal yield for all states o Total acres for all states *Does not include BWE cost

  18. AL/FAL 99-01

    Broader source: Energy.gov (indexed) [DOE]

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  19. A=17Al (1993TI07)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  20. ALS Ceramics Materials Research Advances Engine Performance

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  1. ALS Ceramics Materials Research Advances Engine Performance

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  2. ALS Reveals New State of Matter

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  3. ALS Reveals New State of Matter

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del(ANL-IN-03-032)8Li (59AJ76) (See theDoctoral Fellowship inALS Reveals New State of

  4. ALS Reveals New State of Matter

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del(ANL-IN-03-032)8Li (59AJ76) (See theDoctoral Fellowship inALS Reveals New State

  5. ALS Reveals New State of Matter

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  6. Microsoft Word - AL2006-10.doc

    Office of Environmental Management (EM)

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  7. Microsoft Word - AL2006-11.doc

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  8. Microsoft Word - AL2008-05.doc

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  9. Microsoft Word - AL2000-01.doc

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  10. Microsoft Word - AL2005-03.doc

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  11. ALS History: The First 20 Years

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  12. ALS Operating Schedule on Google Calendar

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  13. ALS Postdoc Recognized for Outstanding Thesis

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  14. ALS@20 Kick-Off Celebration

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  15. April 27, 2015-Special ALS Colloquium

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  16. Category:Montgomery, AL | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty EditCalifornia:Power LPInformationCashtonGo Back toFL" The followingAL Jump

  17. Promising Magnesium Battery Research at ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible forPortsmouth/Paducah47,193.70 HgPromising Magnesium Battery Research at ALS Promising

  18. California Building Industry Association et al. v. State Water...

    Open Energy Info (EERE)

    et al. v. State Water Resources Control Board Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal CaseHearing: California Building Industry Association et al....

  19. als bestandteil des: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    berexprimiert. Das kodierende Onkogen BMI1 ist ein direktes Zielgen des (more) Fehr, Daniel 2007-01-01 8 Structures Al-Al2O3-InP : Analyse des processus de drive et valuation...

  20. al ruido industrial: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary: .5% absolute 2 compared to conventional aluminum back surface field (Al-BSF) solar cells. The main effect SINGULAR In the recent years, aluminum oxide (AlOx) layers...

  1. Data Transfer Considerations for ALS Scientists and Users

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Data Transfer Considerations for ALS Scientists and Users Print Introduction Working at the ALS generates huge amounts of data, and for many years this has caused users to have to...

  2. al paciente terminal: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Robin L. 4 La faune de Mammifres du Pliocne terminal d'Ahl al Oughlam, Casablanca, Maroc The Late Pliocene mammalian fauna of Ahl al Oughlam, Casablanca, Morocco Physics...

  3. al coated a2: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2 AlTiN layer effect on mechanical properties of Ti-doped diamond-like carbon composite coatings Engineering Websites Summary: AlTiN layer effect on mechanical properties...

  4. als semantische bausteine: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    I. 53 In Memory of Al Cameron CERN Preprints Summary: Al Cameron, who died recently (October 3, 2005) at 80, was one of the giants in astrophysics. His insights were profound and...

  5. al embarazo reporte: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    seurauksiin, geenitutkimukseen ja (more) Ahvonen,Jukka 2006-01-01 57 Al-Qaeda in Libya: A Profile PREFACE CiteSeer Summary: This report attempts to assess al-Qaedas...

  6. Takeda Advances Diabetes Drug Development at the ALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Takeda Advances Diabetes Drug Development at the ALS Takeda Advances Diabetes Drug Development at the ALS Print Tuesday, 19 May 2015 12:25 Type 2 diabetes mellitus (T2DM),...

  7. Epitaxial properties of Al-doped ZnO thin films grown by pulsed laser deposition on SrTiO{sub 3}(001)

    SciTech Connect (OSTI)

    Karger, M.; Schilling, M. [Technische Universitaet Braunschweig, Institut fuer Elektrische Messtechnik und Grundlagen der Elektrotechnik, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany)

    2005-02-15T23:59:59.000Z

    Undoped and Al-doped ZnO films with dopant concentrations of nominally 1% and 10% and a thickness of 100 nm have been grown on SrTiO{sub 3}(001) by pulsed laser deposition at substrate temperatures between 650 deg. C and 820 deg. C. The epitaxial conditions were examined with high pressure in-situ reflection high energy electron diffraction (RHEED) and ex-situ x-ray diffraction (XRD) measurements in different geometries. The films are highly (1120)-oriented with a lattice mismatch between the SrTiO{sub 3}[110] direction and the c-axis of about 3%. Atomic force microscopy (AFM) revealed smooth surfaces with a roughness of d{sub rms}<5 nm and different sized islands.

  8. Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Eng, L.E.; Chen, T.R.; Sanders, S.; Zhuang, Y.H.; Zhao, B.; Yariv, A. (Department of Applied Physics, California Institute of Technology, Pasadena, California 91125 (US)); Morkoc, H. (The Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801)

    1989-10-02T23:59:59.000Z

    We report on low threshold current strained InGaAs/AlGaAs single quantum well lasers grown by molecular beam epitaxy. Broad-area threshold current densities of 114 A/cm{sup 2} at 990 nm were measured for 1540-{mu}m-long lasers. Threshold currents of 2.4 mA at 950 nm were obtained for an uncoated buried-heterostructure device with a 2-{mu}m-wide stripe and 425-{mu}m-long cavity. With reflective coatings the best device showed 0.9 mA threshold current ({ital L}=225 {mu}m). Preliminary modulation measurements show bandwidths up to 5.5 GHz limited by the detector response.

  9. Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN

    SciTech Connect (OSTI)

    Sheu, J.K.; Lee, M.L.; Tun, C.J.; Lin, S.W. [Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electro-Optical Engineering, Southern Taiwan University of Technology, No.1, Nantai St, Yung-Kang City, Tainan 710, Taiwan (China); Institute of Optical Science, National Central University, Jhongli 32001, Taiwan (China)

    2006-01-23T23:59:59.000Z

    This work prepared Al-doped ZnO(AZO) films using dc sputtering to form Schottky contacts onto GaN films with low-temperature-grown GaN cap layer. Application of ultraviolet photodetector showed that spectral responsivity exhibits a narrow bandpass characteristic ranging from 345 to 375 nm. Moreover, unbiased peak responsivity was estimated to be around 0.12 A/W at 365 nm, which corresponds to a quantum efficiency of around 40%. In our study, relatively low responsivity can be explained by the marked absorption of the AZO contact layer. When the reverse biases were below 5 V, the study revealed that dark currents were well below 5x10{sup -12} A even though the samples were annealed at increased temperatures.

  10. Metastable phase diagram for Ni-implanted Al and pulse surface melted Al(Ni)

    SciTech Connect (OSTI)

    Follstaedt, D.M.; Picraux, S.T.

    1984-01-01T23:59:59.000Z

    The microstructure of <110> Al implanted with Ni was examined before and after subsequent electron beam pulsed surface melting (65 ns, 1.7 J/cm/sup 2/). Both processes were done with the Al substrate at room temperature. Implantation at several energies (160 to 15 keV) into a given sample produced a nearly constant measured Ni concentration through a approx. 0.1 ..mu..m region below the surface (7). Such samples with concentrations from 8 to 25 at. % Ni were examined, along with a sample with a peak concentration of 32 at. % Ni.

  11. als medium von: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Information Technology) Prof. Dr. Andreas Rausch (Software Systems Engineering Zachmann, Gabriel 7 Bachelorarbeit Integration von PDF-Formularen als Multidisciplinary...

  12. als homologem von: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Information Technology) Prof. Dr. Andreas Rausch (Software Systems Engineering Zachmann, Gabriel 7 Bachelorarbeit Integration von PDF-Formularen als Multidisciplinary...

  13. als folge von: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Information Technology) Prof. Dr. Andreas Rausch (Software Systems Engineering Zachmann, Gabriel 12 Bachelorarbeit Integration von PDF-Formularen als Multidisciplinary...

  14. Chemical Hygiene Planh UNIVERSITY OF AlASKA

    E-Print Network [OSTI]

    Hartman, Chris

    Chemical Hygiene Planh · UNIVERSITY OF AlASKA · · FAIRBANKS INTRODUCTION.....................................................................................................3 C Chemical Hygiene Officer (CHO ................................................................................................................... 5 B Personal Hygiene

  15. Electrosteric enhanced stability of functional sub-10 nm cerium and iron oxide particles in cell culture medium

    E-Print Network [OSTI]

    B. Chanteau; J. Fresnais; J. -F. Berret

    2009-07-06T23:59:59.000Z

    Applications of nanoparticles in biology require that the nanoparticles remain stable in solutions containing high concentrations of proteins and salts, as well as in cell culture media. In this work, we developed simple protocols for the coating of sub-10 nm nanoparticles and evaluated the colloidal stability of dispersions in various environments. Ligands (citric acid), oligomers (phosphonate-terminated poly(ethylene oxide)) and polymers (poly(acrylic acid)) were used as nanometer-thick adlayers for cerium (CeO2) and iron (gamma-Fe2O3) oxide nanoparticles. The organic functionalities were adsorbed on the particle surfaces via physical (electrostatic) forces. Stability assays at high ionic strength and in cell culture media were performed by static and dynamic light scattering. Among the three coating examined, we found that only poly(acrylic acid) fully preserved the dispersion stability on the long term (> weeks). The improved stability was explained by the multi-point attachments of the chains onto the particle surface, and by the adlayer-mediated electrosteric interactions. These results suggest that anionically charged polymers represent an effective alternative to conventional coating agents.

  16. Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

    SciTech Connect (OSTI)

    Winterfeldt, M., E-mail: martin.winterfeldt@fbh-berlin.de; Crump, P.; Wenzel, H.; Erbert, G.; Tränkle, G. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2014-08-14T23:59:59.000Z

    GaAs-based broad-area diode lasers are needed with improved lateral beam parameter product (BPP{sub lat}) at high power. An experimental study of the factors limiting BPP{sub lat} is therefore presented, using extreme double-asymmetric (EDAS) vertical structures emitting at 910?nm. Continuous wave, pulsed and polarization-resolved measurements are presented and compared to thermal simulation. The importance of thermal and packaging-induced effects is determined by comparing junction -up and -down devices. Process factors are clarified by comparing diodes with and without index-guiding trenches. We show that in all cases studied, BPP{sub lat} is limited by a non-thermal BPP ground-level and a thermal BPP, which depends linearly on self-heating. Measurements as a function of pulse width confirm that self-heating rather than bias-level dominates. Diodes without trenches show low BPP ground-level, and a thermal BPP which depends strongly on mounting, due to changes in the temperature profile. The additional lateral guiding in diodes with trenches strongly increases the BPP ground-level, but optically isolates the stripe from the device edges, suppressing the influence of the thermal profile, leading to a BPP-slope that is low and independent of mounting. Trenches are also shown to initiate strain fields that cause parasitic TM-polarized emission with large BPP{sub lat}, whose influence on total BPP{sub lat} remains small, provided the overall polarization purity is >95%.

  17. Damage threshold of inorganic solids under free-electron-laser irradiation at 32.5 nm wavelength

    SciTech Connect (OSTI)

    Hau-Riege, S; London, R A; Bionta, R M; McKernan, M A; Baker, S L; Krzywinski, J; Sobierajski, R; Nietubyc, R; Pelka, J B; Jurek, M; Klinger, D; Juha, L; Chalupsky, J; Cihelka, J; Hajkova, V; Koptyaev, S; Velyhan, A; Krasa, J; Kuba, J; Tiedtke, K; Toleikis, S; Tschentscher, T; Wabnitz, H; Bergh, M; Caleman, C; Sokolowski-Tinten, K; Stojanovic, N; Zastrau, U; Tronnier, A; Meyer-ter-Vehn, J

    2007-12-03T23:59:59.000Z

    We exposed samples of B4C, amorphous C, chemical-vapor-deposition (CVD)-diamond C, Si, and SiC to single 25 fs-long pulses of 32.5 nm free-electron-laser radiation at fluences of up to 2.2 J/cm{sup 2}. The samples were chosen as candidate materials for x-ray free electron laser (XFEL) optics. We found that the threshold for surface-damage is on the order of the fluence required for thermal melting. For larger fluences, the crater depths correspond to temperatures on the order of the critical temperature, suggesting that the craters are formed by two-phase vaporization [1]. XFELs have the promise of producing extremely high-intensity ultrashort pulses of coherent, monochromatic radiation in the 1 to 10 keV regime. The expected high output fluence and short pulse duration pose significant challenges to the optical components, including radiation damage. It has not been possible to obtain direct experimental verification of the expected damage thresholds since appropriate x-ray sources are not yet available. FLASH has allowed us to study the interaction of high-fluence short-duration photon pulses with materials at the shortest wavelength possible to date. With these experiments, we have come closer to the extreme conditions expected in XFEL-matter interaction scenarios than previously possible.

  18. Characterization, 1064 nm photon signals and background events of a tungsten TES detector for the ALPS experiment

    E-Print Network [OSTI]

    Dreyling-Eschweiler, Jan; Döbrich, Babette; Horns, Dieter; Januschek, Friederike; Lindner, Axel

    2015-01-01T23:59:59.000Z

    The high efficiency, low-background, and single-photon detection with transition-edge sensors (TES) is making this type of detector attractive in widely different types of application. In this paper, we present first characterizations of a TES to be used in the Any Light Particle Search (ALPS) experiment searching for new fundamental ultra-light particles. Firstly, we describe the setup and the main components of the ALPS TES detector (TES, millikelvin-cryostat and SQUID read-out) and their performances. Secondly, we explain a dedicated analysis method for single-photon spectroscopy and rejection of non-photon background. Finally, we report on results from extensive background measurements. Considering an event-selection, optimized for a wavelength of $1064~{\\rm nm}$, we achieved a background suppression of $\\sim 10^{-3}$ with a $\\sim 50~\\%$ efficiency for photons passing the selection. The resulting overall efficiency was $23~\\%$ with a dark count rate of $8.6 \\cdot 10^{-3}~{\\rm s}^{-1}$. We observed that pi...

  19. Characterization, 1064 nm photon signals and background events of a tungsten TES detector for the ALPS experiment

    E-Print Network [OSTI]

    Jan Dreyling-Eschweiler; Noemie Bastidon; Babette Döbrich; Dieter Horns; Friederike Januschek; Axel Lindner

    2015-02-27T23:59:59.000Z

    The high efficiency, low-background, and single-photon detection with transition-edge sensors (TES) is making this type of detector attractive in widely different types of application. In this paper, we present first characterizations of a TES to be used in the Any Light Particle Search (ALPS) experiment searching for new fundamental ultra-light particles. Firstly, we describe the setup and the main components of the ALPS TES detector (TES, millikelvin-cryostat and SQUID read-out) and their performances. Secondly, we explain a dedicated analysis method for single-photon spectroscopy and rejection of non-photon background. Finally, we report on results from extensive background measurements. Considering an event-selection, optimized for a wavelength of $1064~{\\rm nm}$, we achieved a background suppression of $\\sim 10^{-3}$ with a $\\sim 50~\\%$ efficiency for photons passing the selection. The resulting overall efficiency was $23~\\%$ with a dark count rate of $8.6 \\cdot 10^{-3}~{\\rm s}^{-1}$. We observed that pile-up events of thermal photons are the main background component.

  20. O({sup 3}P{sub J}) formation and desorption by 157-nm photoirradiation of amorphous solid water

    SciTech Connect (OSTI)

    DeSimone, Alice J. [School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, Georgia 30332–0400 (United States)] [School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, Georgia 30332–0400 (United States); Orlando, Thomas M., E-mail: thomas.orlando@chemistry.gatech.edu [School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, Georgia 30332–0400 (United States); School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332–0400 (United States)

    2014-03-07T23:59:59.000Z

    Photodissociation of amorphous solid water (ASW) deposited on a thinly oxidized copper substrate at 82 K was studied by measuring O({sup 3}P{sub J=2,1,0}) photoproducts detected with resonance-enhanced multiphoton ionization. For each spin-orbit state, the oxygen atom time-of-flight spectrum was measured as a function of H{sub 2}O exposure, which is related to ice thickness, and 157-nm irradiation time. Four Maxwell-Boltzmann distributions with translational temperatures of 10?000 K, 1800 K, 400 K, and 82 K were found to fit the data. The most likely formation mechanisms are molecular elimination following ionization of water and ion-electron recombination, secondary recombination of hydroxyl radicals, and photodissociation of adsorbed hydroxyl radicals. Evidence for O-atom diffusion through bulk ASW was found for H{sub 2}O exposures of at least 5 Langmuir (1 L = 10{sup ?6} Torr?s). The cross sections for O({sup 3}P{sub 2}) depletion were 1.3 × 10{sup ?19} and 6.5 × 10{sup ?20} cm{sup 2} for 1 and 5 L, respectively.

  1. THE EVOLUTION OF SOLAR FLUX FROM 0.1 nm TO 160 {mu}m: QUANTITATIVE ESTIMATES FOR PLANETARY STUDIES

    SciTech Connect (OSTI)

    Claire, Mark W. [School of Environmental Sciences, University of East Anglia, Norwich, UK NR4 7TJ (United Kingdom); Sheets, John; Meadows, Victoria S. [Virtual Planetary Laboratory and Department of Astronomy, University of Washington, Box 351580, Seattle, WA 98195 (United States); Cohen, Martin [Radio Astronomy Laboratory, University of California, Berkeley, CA 94720-3411 (United States); Ribas, Ignasi [Institut de Ciencies de l'Espai (CSIC-IEEC), Facultat de Ciencies, Torre C5 parell, 2a pl, Campus UAB, E-08193 Bellaterra (Spain); Catling, David C., E-mail: M.Claire@uea.ac.uk [Virtual Planetary Laboratory and Department of Earth and Space Sciences, University of Washington, Box 351310, Seattle, WA 98195 (United States)

    2012-09-20T23:59:59.000Z

    Understanding changes in the solar flux over geologic time is vital for understanding the evolution of planetary atmospheres because it affects atmospheric escape and chemistry, as well as climate. We describe a numerical parameterization for wavelength-dependent changes to the non-attenuated solar flux appropriate for most times and places in the solar system. We combine data from the Sun and solar analogs to estimate enhanced UV and X-ray fluxes for the young Sun and use standard solar models to estimate changing visible and infrared fluxes. The parameterization, a series of multipliers relative to the modern top of the atmosphere flux at Earth, is valid from 0.1 nm through the infrared, and from 0.6 Gyr through 6.7 Gyr, and is extended from the solar zero-age main sequence to 8.0 Gyr subject to additional uncertainties. The parameterization is applied to a representative modern day flux, providing quantitative estimates of the wavelength dependence of solar flux for paleodates relevant to the evolution of atmospheres in the solar system (or around other G-type stars). We validate the code by Monte Carlo analysis of uncertainties in stellar age and flux, and with comparisons to the solar proxies {kappa}{sup 1} Cet and EK Dra. The model is applied to the computation of photolysis rates on the Archean Earth.

  2. Lifetime studies of 130nm nMOS transistors intended for long-duration, cryogenic high-energy physics experiments.

    SciTech Connect (OSTI)

    Hoff, J.R.; /Fermilab; Arora, R.; Cressler, J.D.; /Georgia Tech; Deptuch, G.W.; /Fermilab; Gui, P.; /Southern Methodist U.; Lourenco, N.E.; /Georgia Tech; Wu, G.; /Southern Methodist U.; Yarema, R.J.; /Fermilab

    2011-12-01T23:59:59.000Z

    Future neutrino physics experiments intend to use unprecedented volumes of liquid argon to fill a time projection chamber in an underground facility. To increase performance, integrated readout electronics should work inside the cryostat. Due to the scale and cost associated with evacuating and filling the cryostat, the electronics will be unserviceable for the duration of the experiment. Therefore, the lifetimes of these circuits must be well in excess of 20 years. The principle mechanism for lifetime degradation of MOSFET devices and circuits operating at cryogenic temperatures is via hot carrier degradation. Choosing a process technology that is, as much as possible, immune to such degradation and developing design techniques to avoid exposure to such damage are the goals. This requires careful investigation and a basic understanding of the mechanisms that underlie hot carrier degradation and the secondary effects they cause in circuits. In this work, commercially available 130nm nMOS transistors operating at cryogenic temperatures are investigated. The results show that the difference in lifetime for room temperature operation and cryogenic operation for this process are not great and the lifetimes at both 300K and at 77K can be projected to more than 20 years at the nominal voltage (1.5V) for this technology.

  3. R. Jaff, et al.: Closing a major gap in the

    E-Print Network [OSTI]

    Olver, Peter

    and source of black carbon aerosol over Taklimakan Desert, LI Juan et al, Science China - Chemistry, 53 (2010, 13 #12;Monday, May 6, 13 #12;HAMMES ET AL.: BLACK CARBON QUANTIFICATION RING TRIAL HAMMES ET AL.: BLACK CARBON QUANTIFICATION RING TRIAL Monday, May 6, 13 #12;http://en.wikipedia.org/wiki/Black_carbon

  4. Graeber et al. 2014 1 Supporting Information (SI Appendix)

    E-Print Network [OSTI]

    Chittka, Lars

    Graeber et al. 2014 1 Supporting Information (SI Appendix) Graeber et al. (2014) - www for the temperature- and gibberellin-dependent control of seed germination Kai Graeber, Ada Linkies, Tina Steinbrecher17 and WT #12;Graeber et al. 2014 2 Supplementary Methods Genome Size Analysis by Flow Cytometry

  5. Positron annihilation studies of the AlO{sub x}/SiO{sub 2}/Si interface in solar cell structures

    SciTech Connect (OSTI)

    Edwardson, C. J.; Coleman, P. G. [Department of Physics, University of Bath, Bath BA2 7AY (United Kingdom); Li, T.-T. A.; Cuevas, A. [College of Engineering and Computer Science, Australian National University, Canberra, ACT 0200 (Australia); Ruffell, S. [Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia)

    2012-03-01T23:59:59.000Z

    Film and film/substrate interface characteristics of 30 and 60 nm-thick AlO{sub x} films grown on Si substrates by thermal atomic layer deposition (ALD), and 30 nm-thick AlO{sub x} films by sputtering, have been probed using variable-energy positron annihilation spectroscopy (VEPAS) and Doppler-broadened spectra ratio curves. All samples were found to have an interface which traps positrons, with annealing increasing this trapping response, regardless of growth method. Thermal ALD creates an AlO{sub x}/SiO{sub x}/Si interface with positron trapping and annihilation occurring in the Si side of the SiO{sub x}/Si boundary. An induced positive charge in the Si next to the interface reduces diffusion into the oxides and increases annihilation in the Si. In this region there is a divacancy-type response (20 {+-} 2%) before annealing which is increased to 47 {+-} 2% after annealing. Sputtering seems to not produce samples with this same electrostatic shielding; instead, positron trapping occurs directly in the SiO{sub x} interface in the as-deposited sample, and the positron response to it increases after annealing as an SiO{sub 2} layer is formed. Annealing the film has the effect of lowering the film oxygen response in all film types. Compared to other structural characterization techniques, VEPAS shows larger sensitivity to differences in film preparation method and between as-deposited and annealed samples.

  6. InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy

    SciTech Connect (OSTI)

    Tanaka, H.; Kawamura, Y.; Nojima, S.; Wakita, K.; Asahi, H.

    1987-03-01T23:59:59.000Z

    Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of InGaP/InGaAlP MQW laser diodes is achieved for the first time. The lasing wavelength is 658 nm with a threshold current density of 7.6 kA/cm/sup 2/. cw operation is also achieved in the MQW laser diodes at -125 /sup 0/C.

  7. Corrosion of Bare and Coated Al 5052-H3 and Al 6061-T6 in Seawater Work sponsored by

    E-Print Network [OSTI]

    1 Corrosion of Bare and Coated Al 5052-H3 and Al 6061-T6 in Seawater Work sponsored by: US and Kentaro Kusada Hawaii Corrosion Laboratory Department of Mechanical Engineering College of Engineering

  8. Effect of surface passivation by SiN/SiO{sub 2} of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

    SciTech Connect (OSTI)

    Gassoumi, Malek, E-mail: malek.gassoumi@fsm.rnu.tn; Mosbahi, Hana; Zaidi, Mohamed Ali [Universite deMonastir, Laboratoire de Micro-Optoelectroniques et Nanostructures, Faculte des Sciences de Monastir (Tunisia); Gaquiere, Christophe [Universite des Sciences et Technologies de Lille, Institut d'Electronique de Microelectronique et de Nanotechnologie IEMN, Departement hyperfrequences et Semiconducteurs (France); Maaref, Hassen [Universite deMonastir, Laboratoire de Micro-Optoelectroniques et Nanostructures, Faculte des Sciences de Monastir (Tunisia)

    2013-07-15T23:59:59.000Z

    Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO{sub 2} passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO{sub 2} film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device.

  9. Influence of germanium and the melting method on the mechanical properties of NM23KhYu alloy at high temperatures

    SciTech Connect (OSTI)

    Lebedev, D.V.; Rozonova, V.M.

    1986-05-01T23:59:59.000Z

    The purpose of the investigation was to increase the plasticity and ductility of NM233KhYu alloy without a detrimental effect on its service properties, selection of methods evaluation of placticity and ductility at increased temperatures, and establishment on the basis of the results obtained of the optimum temperature range for hot working by pressure. To evaluate the mechanical properties at increased temperature tension, impact strength and torsion tests were made. Alloying with germanium of NM23KhYu alloy leads to a two-to-three-time increase in its impact strength. Electron beam remelting of NM23KhYu alloy with germanium increases the impact strength, and the characteristics of plasticity by 1.5-2 times in comparison with the similar properties of this alloy produced by vacuum induction melting.

  10. 13. B. E. Baysal et al., Genomics 44, 214 (1997); P. Deloukas et al., Science 282, 744 (1998).

    E-Print Network [OSTI]

    Ulanovsky, Nachum

    . Kelleher, M. Hoeckel, Strahlenther. Onkol. 174, Suppl. 4, 6 (1998). 30. T. G. Graeber et al., Nature 379

  11. AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD

    E-Print Network [OSTI]

    Boyer, Edmond

    AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD R. Meunier1 , A, 38054 Grenoble Cedex 9, France 2 LAAS-CNRS, 7 Avenue du Colonel Roche, 31400 Toulouse, France AlGaN /GaN behavior. Those trapped charges can be associated to the carbon contamination of the AlGaN surface

  12. Oxidation of Al doped Au clusters: A first principles study

    SciTech Connect (OSTI)

    Rajesh, Chinagandham [RMC, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India); Majumder, Chiranjib [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India)

    2009-06-21T23:59:59.000Z

    Using first principles method we report the oxidation of Al doped Au clusters. This work is divided into two parts: (i) the equilibrium structures and stability of Al doped Au{sub n-1} clusters (n=2-7,21) and (ii) the interaction of O{sub 2} with stable clusters. The calculations are performed using the plane wave pseudopotential approach under the density functional theory and generalized gradient approximation for the exchange and correlation functional. The optimized geometries of Au{sub n-1}Al clusters indicate that the substitution of Au by Al results an early onset of three-dimensional structures from tetramer onwards. This is different from the results of transition metal doped Au clusters, where the planar conformation of Au clusters retains up to heptamer. The stability of Au{sub n-1}Al clusters has been analyzed based on the binding energy, second difference in energy, and the energy gaps between the highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels. Based on the energetics, the Au{sub 3}Al and Au{sub 5}Al clusters are found to have extraordinary stability. The oxidation mechanism of Al doped Au clusters have been studied by the interaction of O{sub 2} with Al, Au, AuAl, Au{sub 3}Al, and Au{sub 20}Al clusters. It is found that the oxidation of Au{sub n-1}Al clusters undergoes via dissociative mechanism, albeit significant charge transfer from Al to Au. Moreover, the O{sub 2} molecule prefers to attach at the Al site rather than at the Au site.

  13. Magnetization anomaly of Nb3Al strands and instability of Nb3Al Rutherford cables

    SciTech Connect (OSTI)

    Yamada, Ryuji; /Fermilab; Kikuchi, Akihiro; /Tsukuba Magnet Lab; Wake, Masayoshi; /KEK, Tsukuba

    2006-08-01T23:59:59.000Z

    Using a Cu stabilized Nb{sub 3}Al strand with Nb matrix, a 30 meter long Nb{sub 3}Al Rutherford cable was made by a collaboration of Fermilab and NIMS. Recently the strand and cable were tested. In both cases instability was observed at around 1.5 Tesla. The magnetization of this Nb{sub 3}Al strand was measured first using a balanced coil magnetometer at 4.2 K. Strands showed an anomalously large magnetization behavior around at 1.6 T, which is much higher than the usual B{sub c2} {approx} 0.5 Tesla (4.2 K) of Nb matrix. This result is compared with the magnetization data of short strand samples using a SQUID magnetometer, in which a flux-jump signal was observed at 0.5 Tesla, but not at higher field. As a possible explanation for this magnetization anomaly, the interfilament coupling through the thin Nb films in the strands is suggested. The instability problem observed in low field tests of the Nb{sub 3}Al Rutherford cables is attributed to this effect.

  14. INFORME DE LA SNDICA DE GREUGES AL CLAUSTRE I AL CONSELL SOCIAL

    E-Print Network [OSTI]

    Verschure, Paul

    .2.1. Consultes i informacions d'altres síndics al Síndic de la UPF 137 2.2.2. Informes rebuts d'altres síndics del Síndic de Greuges de la UPF. Quina és la característica que domina en l'informe que presentem

  15. Microstructure, strengthening mechanisms and hot deformation behavior of an oxide-dispersion strengthened UFG Al6063 alloy

    SciTech Connect (OSTI)

    Asgharzadeh, H. [Department of Mechanical Engineering, University of Tabriz, P.O. Box 51666-16471, Tabriz (Iran, Islamic Republic of)] [Department of Mechanical Engineering, University of Tabriz, P.O. Box 51666-16471, Tabriz (Iran, Islamic Republic of); Kim, H.S. [Department of Materials Science and Engineering, Pohang University of Science and Technology, P.O. Box 790-784, Pohang (Korea, Republic of)] [Department of Materials Science and Engineering, Pohang University of Science and Technology, P.O. Box 790-784, Pohang (Korea, Republic of); Simchi, A., E-mail: simchi@sharif.edu [Department of Materials Science and Engineering and Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 11365-9466, Tehran (Iran, Islamic Republic of)

    2013-01-15T23:59:59.000Z

    An ultrafine-grained Al6063/Al{sub 2}O{sub 3} (0.8 vol.%, 25 nm) nanocomposite was prepared via powder metallurgy route through reactive mechanical alloying and hot powder extrusion. Scanning electron microcopy, transmission electron microscopy, and back scattered electron diffraction analysis showed that the grain structure of the nanocomposite is trimodal and composed of nano-size grains (< 0.1 {mu}m), ultrafine grains (0.1-1 {mu}m), and micron-size grains (> 1 {mu}m) with random orientations. Evaluation of the mechanical properties of the nanocomposite based on the strengthening-mechanism models revealed that the yield strength of the ultrafine-grained nanocomposite is mainly controlled by the high-angle grain boundaries rather than nanometric alumina particles. Hot deformation behavior of the material at different temperatures and strain rates was studied by compression test and compared to coarse-grained Al6063 alloy. The activation energy of the hot deformation process for the nanocomposite was determined to be 291 kJ mol{sup -1}, which is about 64% higher than that of the coarse-grained alloy. Detailed microstructural analysis revealed that dynamic recrystallization is responsible for the observed deformation softening in the ultrafine-grained nanocomposite. - Highlights: Black-Right-Pointing-Pointer The strengthening mechanisms of Al6063/Al{sub 2}O{sub 3} nanocomposite were evaluated. Black-Right-Pointing-Pointer Hot deformation behavior of the nanocomposite was studied. Black-Right-Pointing-Pointer The hot deformation activation energy was determined using consecutive models. Black-Right-Pointing-Pointer The restoration mechanisms and microstructural changes are presented.

  16. Surface structures of Al-Pd-Mn and Al-Cu-Fe icosahedral quasicrystals

    SciTech Connect (OSTI)

    Shen, Z.

    1999-02-12T23:59:59.000Z

    In this dissertation, the author reports on the surface structure of i-Al-Pd-Mn twofold, threefold, fivefold and i-Al-Cu-Fe fivefold surfaces. The LEED studies indicate the existence of two distinct stages in the regrowth of all four surfaces after Ar{sup +} sputtering. In the first stage, upon annealing at relatively low temperature: 500K--800K (depending on different surfaces), a cubic phase appears. The cubic LEED patterns transform irreversibly to unreconstructed quasicrystalline patterns upon annealing to higher temperatures, indicating that the cubic overlayers are metastable. Based upon the data for three chemically-identical, but symmetrically-inequivalent surfaces, a model is developed for the relation between the cubic overlayers and the quasicrystalline substrate. The model is based upon the related symmetries of cubic close-packed and icosahedral-packed materials. These results may be general among Al-rich, icosahedral materials. STM study of Al-Pd-Mn fivefold surface shows that terrace-step-kink structures start to form on the surface after annealing above 700K. Large, atomic ally-flat terraces were formed after annealing at 900K. Fine structures with fivefold icosahedral symmetry were found on those terraces. Data analysis and comparison of the STM images and structure model of icosahedral Al-Pd-Mn suggest that the fine structures in the STM images may be the pseudo Mackay (PMI) clusters which are the structure units of the structure model. Based upon his results, he can conclude that quasicrystalline structures are the stable structures of quasicrystal surfaces. In other words, quasicrystalline structures extend from the bulk to the surface. As a result of the effort reported in this dissertation, he believes that he has increased his understanding of the surface structure of icosahedral quasicrystals to a new level.

  17. Overview of the development of FeAl intermetallic alloys

    SciTech Connect (OSTI)

    Maziasz, P.J.; Liu, C.T.; Goodwin, G.M.

    1995-09-01T23:59:59.000Z

    B2-phase FeAl ordered intermetallic alloys based on an Fe-36 at.% Al composition are being developed to optimize a combination of properties that includes high-temperature strength, room-temperature ductility, and weldability. Microalloying with boron and proper processing are very important for FeAl properties optimization. These alloys also have the good to outstanding resistance to oxidation, sulfidation, and corrosion in molten salts or chlorides at elevated temperatures, characteristic of FeAl with 30--40 at.% Al. Ingot- and powder-metallurgy (IM and PM, respectively) processing both produce good properties, including strength above 400 MPa up to about 750 C. Technology development to produce FeAl components for industry testing is in progress. In parallel, weld-overlay cladding and powder coating technologies are also being developed to take immediate advantage of the high-temperature corrosion/oxidation and erosion/wear resistance of FeAl.

  18. Structure of a novel dodecaheme cytochrome c from Geobacter sulfurreducens reveals an extended 12 nm protein with interacting hemes.

    SciTech Connect (OSTI)

    Pokkuluri, P. R.; Londer, Y. Y.; Duke, N. E. C.; Pessanha, M.; Yang, X.; Orshonsky, V.; Orshonsky, L.; Erickson, J.; Zagyansky, Y.; Salgueiro, C. A.; Schiffer, M. (Biosciences Division); (Requimte-CQFB); (Univ. nova de Lisboa)

    2011-04-01T23:59:59.000Z

    Multiheme cytochromes c are important in electron transfer pathways in reduction of both soluble and insoluble Fe(III) by Geobacter sulfurreducens. We determined the crystal structure at 3.2 {angstrom} resolution of the first dodecaheme cytochrome c (GSU1996) along with its N-terminal and C-terminal hexaheme fragments at 2.6 and 2.15 {angstrom} resolution, respectively. The macroscopic reduction potentials of the full-length protein and its fragments were measured. The sequence of GSU1996 can be divided into four c{sub 7}-type domains (A, B, C and D) with homology to triheme cytochromes c{sub 7}. In cytochromes c{sub 7} all three hemes are bis-His coordinated, whereas in c{sub 7}-type domains the last heme is His-Met coordinated. The full-length GSU1996 has a 12 nm long crescent shaped structure with the 12 hemes arranged along a polypeptide to form a 'nanowire' of hemes; it has a modular structure. Surprisingly, while the C-terminal half of the protein consists of two separate c{sub 7}-type domains (C and D) connected by a small linker, the N-terminal half of the protein has two c{sub 7}-type domains (A and B) that form one structural unit. This is also observed in the AB fragment. There is an unexpected interaction between the hemes at the interface of domains A and B, which form a heme-pair with nearly parallel stacking of their porphyrin rings. The hemes adjacent to each other throughout the protein are within van der Waals distance which enables efficient electron exchange between them. For the first time, the structural details of c{sub 7}-type domains from one multiheme protein were compared.

  19. Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

    SciTech Connect (OSTI)

    Van Bui, Hao, E-mail: H.VanBui@utwente.nl; Wiggers, Frank B.; Gupta, Anubha; Nguyen, Minh D.; Aarnink, Antonius A. I.; Jong, Michel P. de; Kovalgin, Alexey Y., E-mail: A.Y.Kovalgin@utwente.nl [MESA Institute for Nanotechnology, University of Twente, P. O. Box 217, 7500 AE Enschede (Netherlands)

    2015-01-01T23:59:59.000Z

    The authors have studied and compared the initial growth and properties of AlN films deposited on Si(111) by thermal and plasma-enhanced atomic layer deposition (ALD) using trimethylaluminum and either ammonia or a N{sub 2}-H{sub 2} mixture as precursors. In-situ spectroscopic ellipsometry was employed to monitor the growth and measure the refractive index of the films during the deposition. The authors found that an incubation stage only occurred for thermal ALD. The linear growth for plasma-enhanced ALD (PEALD) started instantly from the beginning due to the higher nuclei density provided by the presence of plasma. The authors observed the evolution of the refractive index of AlN during the growth, which showed a rapid increase up to a thickness of about 30?nm followed by a saturation. Below this thickness, higher refractive index values were obtained for AlN films grown by PEALD, whereas above that the refractive index was slightly higher for thermal ALD films. X-ray diffraction characterization showed a wurtzite crystalline structure with a (101{sup ¯}0) preferential orientation obtained for all the layers with a slightly better crystallinity for films grown by PEALD.

  20. Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Kwon, O.; Boeckl, J. J.; Lee, M. L.; Pitera, A. J.; Fitzgerald, E. A.; Ringel, S. A. [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

    2006-07-01T23:59:59.000Z

    Room temperature operation of visible AlGaInP laser diodes epitaxially integrated on Si was demonstrated. Compressively strained laser heterostructures were grown by molecular beam epitaxy (MBE) on low dislocation density SiGe/Si substrates, where the threading dislocation density of the top relaxed Ge layers was measured in the range of 2x10{sup 6} cm{sup -2}. A threshold current density of J{sub th}{approx}1.65 kA/cm{sup 2} for the as-cleaved, gain-guided AlGaInP laser grown on SiGe/Si was obtained at the peak emission wavelength of 680 nm under pulsed mode current injection. These results show that not only can high quality AlGaInP materials grown by MBE be achieved on Si via relaxed SiGe interlayers, but the prototype demonstration of laser diode operation on Si illustrates that very defect sensitive optoelectronics in the III-P system can indeed be integrated with Si substrates by heteroepitaxial methods.

  1. Short-period superlattices of AlN/Al0.08Ga0.92N grown on AlN substrates S. A. Nikishin,a)

    E-Print Network [OSTI]

    Holtz, Mark

    Group Inc., 1154 Stealth Street, Livermore, California 94550 (Received 10 August 2004; accepted 8 from high dislocation densities that reduce quantum efficiency and lifetime of light emitting diodes (LEDs) and solar blind pho- todetectors. Short period superlattices (SPSLs) of AlN/Al0.08Ga0.92N

  2. Synthesis and structural characterization of Al{sub 4}SiC{sub 4}-homeotypic aluminum silicon oxycarbide, [Al{sub 4.4}Si{sub 0.6}][O{sub 1.0}C{sub 2.0}]C

    SciTech Connect (OSTI)

    Kaga, Motoaki; Iwata, Tomoyuki [Department of Environmental and Materials Engineering, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Nakano, Hiromi [Cooperative Research Facility Center, Toyohashi University of Technology, Toyohashi 441-8580 (Japan); Fukuda, Koichiro, E-mail: fukuda.koichiro@nitech.ac.j [Department of Environmental and Materials Engineering, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)

    2010-03-15T23:59:59.000Z

    A new quaternary layered oxycarbide, [Al{sub 4.39(5)}Si{sub 0.61(5)}]{sub S}IGMA{sub 5}[O{sub 1.00(2)}C{sub 2.00(2)}]{sub S}IGMA{sub 3}C, has been synthesized and characterized by X-ray powder diffraction, transmission electron microscopy and energy dispersive X-ray spectroscopy (EDX). The title compound was found to be hexagonal with space group P6{sub 3}/mmc, Z=2, and unit-cell dimensions a=0.32783(1) nm, c=2.16674(7) nm and V=0.20167(1) nm{sup 3}. The atom ratios Al:Si were determined by EDX, and the initial structural model was derived by the direct methods. The final structural model showed the positional disordering of one of the three types of Al/Si sites. The maximum-entropy methods-based pattern fitting (MPF) method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensity partitioning was minimized. The reliability indices calculated from the MPF were R{sub wp}=3.73% (S=1.20), R{sub p}=2.94%, R{sub B}=1.04% and R{sub F}=0.81%. The crystal was an inversion twin. Each twin-related individual was isostructural with Al{sub 4}SiC{sub 4} (space group P6{sub 3}mc, Z=2). - Graphical abstract: A new oxycarbide discovered in the Al-Si-O-C system, Al{sub 4}SiC{sub 4}-homeotypic [Al{sub 4.4}Si{sub 0.6}][O{sub 1.0}C{sub 2.0}]C. The crystal is an inversion twin, and hence the structure is represented by a split-atom model. The three-dimensional electron density distributions are determined by the maximum-entropy methods-based pattern fitting, being consistent with the disordered structural model.

  3. Synthesis and structural characterization of Al{sub 4}Si{sub 2}C{sub 5}-homeotypic aluminum silicon oxycarbide, (Al{sub 6-x}Si{sub x})(O{sub y}C{sub 5-y}) (x{approx}0.8 and y{approx}1.6)

    SciTech Connect (OSTI)

    Kaga, Motoaki; Urushihara, Daisuke; Iwata, Tomoyuki; Sugiura, Keita [Department of Environmental and Materials Engineering, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Nakano, Hiromi [Cooperative Research Facility Center, Toyohashi University of Technology, Toyohashi 441-8580 (Japan); Fukuda, Koichiro, E-mail: fukuda.koichiro@nitech.ac.j [Department of Environmental and Materials Engineering, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)

    2010-09-15T23:59:59.000Z

    We have prepared a new layered oxycarbide, [Al{sub 5.25(5)}Si{sub 0.75(5)}][O{sub 1.60(7)}C{sub 3.40(7)}], by isothermal heating of (Al{sub 4.4}Si{sub 0.6})(O{sub 1.0}C{sub 3.0}) at 2273 K near the carbon-carbon monoxide buffer. The crystal structure was characterized using X-ray powder diffraction, transmission electron microscopy and energy dispersive X-ray spectroscopy (EDX). The title compound is trigonal with space group R3m (centrosymmetric), Z=3, and hexagonal cell dimensions a=0.32464(2) nm, c=4.00527(14) nm and V=0.36556(3) nm{sup 3}. The atom ratios Al:Si were determined by EDX, and the initial structural model was derived by the direct methods. The final structural model showed the positional disordering of one of the three types of Al/Si sites. The reliability indices were R{sub wp}=4.45% (S=1.30), R{sub p}=3.48%, R{sub B}=2.27% and R{sub F}=1.25%. The crystal is composed of three types of domains with nearly the same fraction, one of which has the crystal structure of space group R3-bar m. The crystal structure of the remaining two domains, which are related by pseudo-symmetry inversion, is noncentrosymmetric with space group R3m. - Graphical Abstract: A new aluminum silicon oxycarbide, (Al{sub 6-x}Si{sub x})(O{sub y}C{sub 5-y}) (x{approx}0.8 and y{approx}1.6). The crystal is composed of three types of domains (I, II and III), and hence the structure is represented by a split-atom model. Individual crystal structures can be regarded as layered structures, which consist of A-type [(Al,Si){sub 4}(O,C){sub 4}] unit layers and B-type [(Al,Si)(O,C){sub 2}] single layers.

  4. Grain size softening effect in Al{sub 62.5}Cu{sub 25}Fe{sub 12.5} nanoquasicrystals

    SciTech Connect (OSTI)

    Mukhopadhyay, N. K., E-mail: mukho.nk@gmail.com [Department of Metallurgical Engineering, Indian Institute of Technology (BHU), Varanasi 221 005 (India); Ali, F., E-mail: fahadali62@hotmail.com [Pakistan Institute of Engineering and Applied Science, P.O. Nilore, Islamabad (Pakistan); Scudino, S., E-mail: S.Scudino@ifw-dresden.de; Samadi Khoshkhoo, M., E-mail: m.samadi.khoshkhoo@ifw-dresden.de; Stoica, M., E-mail: M.Stoica@ifw-dresden.de [IFW Dresden, Institut für Komplexe Materialien, Postfach 27 01 16, D-01171 Dresden (Germany); Srivastava, V. C., E-mail: vcsrivas@gmail.com [Metal Extraction and Forming Division, National Metallurgical Laboratory, Jamshedpur 831007 (India); Uhlenwinkel, V., E-mail: uhl@iwt.uni-bremen.de [Institut für Werkstofftechnik, Universität Bremen, Badgasteiner Str. 3, D-28359 Bremen (Germany); Vaughan, G., E-mail: vaughan@esrf.fr [European Synchrotron Radiation Facilities ESRF, BP 220, 38043 Grenoble (France); Suryanarayana, C., E-mail: Surya@ucf.edu [Department of Mechanical and Aerospace Engineering, University of Central Florida, Orlando, Florida 32816-2450 (United States); Eckert, J., E-mail: J.Eckert@ifw-dresden.de [IFW Dresden, Institut für Komplexe Materialien, Postfach 27 01 16, D-01171 Dresden (Germany); TU Dresden, Institut für Werkstoffwissenschaft, D-01062 Dresden (Germany)

    2013-11-11T23:59:59.000Z

    Inverse Hall-Petch (IHP) behavior in nano-quasicrystalline Al{sub 62.5}Cu{sub 25}Fe{sub 12.5} is reported. Powders with varying grain sizes were produced by mechanical milling of spray-formed quasicrystals. The hardness of the milled powders increased with decreasing grain size down to about 40?nm and decreased with further refinement, demonstrating the IHP behavior. This critical grain size was found to be larger compared to other metallic nanocrystalline alloys. This IHP behaviour has been attributed to the structural complexity in quasicrystals and to thermally activated shearing events of atoms at the grain boundaries.

  5. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2012-12-24T23:59:59.000Z

    Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

  6. Solar-blind deep-UV band-pass filter (250 -350 nm) consisting of a metal nano-grid fabricated

    E-Print Network [OSTI]

    Solar-blind deep-UV band-pass filter (250 - 350 nm) consisting of a metal nano-grid fabricated, fabricated and demonstrated a solar-blind deep-UV pass filter, that has a measured optical performance, the filter offers simple yet effective and low cost solar-blind deep-UV detection at either a single device

  7. Single-domain magnetic pillar array of 35 nm diameter and 65 Gbits/ik2 density for ultrahigh density quantum magnetic storage

    E-Print Network [OSTI]

    density quantum magnetic storage Stephen Y Chou, Mark S. Wei, Peter R. Krauss, and Paul 6. FischerSingle-domain magnetic pillar array of 35 nm diameter and 65 Gbits/ik2 density for ultrahigh is 65 Gbits/in.2-over two orders of magnitude greater than the state-of-the-art magnetic storage density

  8. Revision 12-10-99 13. Summary of Materials Considerations and Data Base (S.J. Zinkle, S. Majumdar and N.M.

    E-Print Network [OSTI]

    California at Los Angeles, University of

    project includes conventional materials (e.g., austenitic stainless steel), low-activation structuralRevision 12-10-99 13. Summary of Materials Considerations and Data Base (S.J. Zinkle, S. Majumdar and N.M. Ghoniem) 13.1 Introduction The list of structural materials originally considered for the APEX

  9. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520525 nm employing graded growth-temperature profile

    E-Print Network [OSTI]

    Gilchrist, James F.

    Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520­525 nm employing current spreading and light extraction in GaN-based light emitting diodes Appl. Phys. Lett. 100, 061107 (2012) Electrically driven nanopyramid green light emitting diode Appl. Phys. Lett. 100, 061106 (2012

  10. H-atom high-n Rydberg time-of-flight spectroscopy of CH bond fission in acrolein dissociated at 193 nm

    E-Print Network [OSTI]

    Butler, Laurie J.

    H-atom high-n Rydberg time-of-flight spectroscopy of C­H bond fission in acrolein dissociated-atom velocity distribution from one- and multiple-photon dissociation processes in acrolein following excitation at 193 nm. The one-photon H-atom signal is dominated by primary C­H bond fission in acrolein. We compare

  11. 10 to 70% methanol in 50 mM KH2PO4 over 25 min, 10 ml/min, monitor at 380 nm). Next, the HPLC-

    E-Print Network [OSTI]

    Gao, Jinming

    10 to 70% methanol in 50 mM KH2PO4 over 25 min, 10 ml/min, monitor at 380 nm). Next, the HPLC- purified mixture was desalted on the same column (methanol was removed on a rotary evaporator, and the sample loaded in H2O and eluted with 90% methanol) and lyophilized, yielding the purified Nvoc

  12. Sub-50 nm high aspect-ratio silicon pillars, ridges, and trenches fabricated using ultrahigh resolution electron beam lithography and reactive ion

    E-Print Network [OSTI]

    resolution electron beam lithography and reactive ion etching P. B. Fischer and S. Y. Chou University of Minnesota Department of Electrical Engineering, Minneapolis, Minnesota 554~3 (Received 29 July 1992 and chlorine based reactive ion etching. These nanoscale Si features can be further reduced to 10 nm using

  13. Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images resolution images have been used to obtain the strain in nano-structured materials.3 Although this approach in many different types of sam- ples, at this time the spatial resolution of between 3 and 6 nm

  14. Emission Spectroscopy of Dissociative Allyl Iodide and Allyl Alcohol Excited at 199.7 nm B. F. Parsons, D. E. Szpunar, and L. J. Butler*

    E-Print Network [OSTI]

    Butler, Laurie J.

    Emission Spectroscopy of Dissociative Allyl Iodide and Allyl Alcohol Excited at 199.7 nm B. F investigated the emission spectroscopy of allyl iodide, CH2dCHCH2I, and allyl alcohol, CH2dCHCH2- OH, excited). The emission spectrum is dominated by activity in the CH2 wag and the CdC stretch, reflecting the dynamics

  15. The photospheric solar oxygen project: III. Investigation of the centre-to-limb variation of the 630nm [OI]-NiI blend

    E-Print Network [OSTI]

    Caffau, E; Steffen, M; Livingston, W; Bonifacio, P; Malherbe, J -M; Doerr, H -P; Schmidt, W

    2015-01-01T23:59:59.000Z

    The solar photospheric abundance of oxygen is still a matter of debate. For about ten years some determinations have favoured a low oxygen abundance which is at variance with the value inferred by helioseismology. Among the oxygen abundance indicators, the forbidden line at 630nm has often been considered the most reliable even though it is blended with a NiI line. In Papers I and Paper II of this series we reported a discrepancy in the oxygen abundance derived from the 630nm and the subordinate [OI] line at 636nm in dwarf stars, including the Sun. Here we analyse several, in part new, solar observations of the the centre-to-limb variation of the spectral region including the blend at 630nm in order to separate the individual contributions of oxygen and nickel. We analyse intensity spectra observed at different limb angles in comparison with line formation computations performed on a CO5BOLD 3D hydrodynamical simulation of the solar atmosphere. The oxygen abundances obtained from the forbidden line at differe...

  16. The effect of the operation modes of a gas discharge low-pressure amalgam lamp on the intensity of generation of 185 nm UV vacuum radiation

    SciTech Connect (OSTI)

    Vasilyak, L. M., E-mail: vasilyak@ihed.ras.ru [Russian Academy of Sciences, Joint Institute of High Temperatures (Russian Federation); Drozdov, L. A., E-mail: lit@npo.lit.ru; Kostyuchenko, S. V.; Sokolov, D. V. [ZAO LIT (Russian Federation); Kudryavtsev, N. N.; Sobur, D. A., E-mail: soburda@gmail.com [Moscow Institute for Physics and Technology (Russian Federation)

    2011-12-15T23:59:59.000Z

    The effect of the discharge current, mercury vapor pressure, and the inert gas pressure on the intensity and efficiency of the 185 nm line generation are considered. The spectra of the UV radiation (vacuum ultraviolet) transmission by protective coatings from the oxides of rare earth metals and aluminum are investigated.

  17. SEEDED VISA: A 1064nm LASER-SEEDED FEL AMPLIFIER AT THE M. Dunning, G. Andonian, E. Hemsing, S. Reiche, J. Rosenzweig

    E-Print Network [OSTI]

    Brookhaven National Laboratory

    SEEDED VISA: A 1064nm LASER-SEEDED FEL AMPLIFIER AT THE BNL ATF M. Dunning, G. Andonian, E. Hemsing Free Electron Laser (FEL) using the VISA undulator and a Nd:YAG seed laser will be performed for a short Rayleigh length FEL amplifier at 1 micron to allow for high power transmission with min- imal

  18. The Model 5000-16C 1000 WATT FEL Lamp Standard pro-vides absolute calibration of spectral irradiance from 250 nm to

    E-Print Network [OSTI]

    The Model 5000-16C 1000 WATT FEL Lamp Standard pro- vides absolute calibration of spectral irradiance from 250 nm to 2.5 microns.This Tungsten-Halogen Lamp Standard bears the ANSI designation of FEL might be discernible at the crossover point of the two referenced NIST Scales. 5000 FEL 1000Watt Lamp

  19. III International Conference on SiGe(C) Epitaxy and Heterostructures, NM, Mar. 2003 SiGe Single-Hole Transistor Fabricated by AFM Oxidation and Epitaxial Regrowth

    E-Print Network [OSTI]

    III International Conference on SiGe(C) Epitaxy and Heterostructures, NM, Mar. 2003 110 SiGe Single, West Lafayette, IN 47907, U.S.A. Nanodevices on Si/SiGe heterostructures are of growing interest [1 the performance of the devices. In this paper, we demonstrate a reproducible single-hole transistor SiGe device

  20. Renewable Energy Desalination: An Emerging Solution to Close MENA's Water Gap 56th Annual NM Water Conf., New Water New Energy: A Conference Linking Desalination and Renewable Energy

    E-Print Network [OSTI]

    Johnson, Eric E.

    .S. While at the World Bank, Dr. Debele has worked in many regions, including South Asia, Latin AmericaRenewable Energy Desalination: An Emerging Solution to Close MENA's Water Gap 56th Annual NM Water Conf., New Water New Energy: A Conference Linking Desalination and Renewable Energy 45 Renewable Energy

  1. Highly Active and Stable MgAl2O4 Supported Rh and Ir Catalysts...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and stability for methane steam reforming in the presence of simulated biomass-derived syngas. It was found that highly dispersed 2 nm Rh and 1 nm Ir clusters were formed on the...

  2. Dependence of Gas-Phase Crotonaldehyde Hydrogenation Selectivity and Activity on the Size of Pt Nanoparticles (1.7-7.1 nm) Supported on SBA-15

    SciTech Connect (OSTI)

    Grass, Michael; Rioux, Robert; Somorjai, Gabor A.

    2008-08-03T23:59:59.000Z

    The selectivity and activity for the hydrogenation of crotonaldehyde to crotyl alcohol and butyraldehyde was studied over a series of Pt nanoparticles (diameter of 1.7, 2.9, 3.6, and 7.1 nm). The nanoparticles were synthesized by the reduction of chloroplatinic acid by alcohol in the presence of poly(vinylpyrrolidone) (PVP), followed by encapsulation into mesoporous SBA-15 silica. The rate of crotonaldehyde hydrogenation and selectivity towards crotyl alcohol both increase with increasing particle size. The selectivity towards crotyl alcohol increased from 13.7 % to 33.9 % (8 Torr crotonaldehyde, 160 Torr H{sub 2} and 353 K), while the turnover frequency increases from 2.1 x 10{sup -2} s{sup -1} to 4.8 x 10{sup -2} s{sup -1} with an increase in the particle size from 1.7 nm to 7.1 nm. The decarbonylation pathway to form propene and CO is enhanced over the higher proportion of coordinatively unsaturated sites on the smaller nanoparticles. The apparent activation energy remains constant ({approx} 16 kcal mol{sup -1} for the formation of butyraldehyde and {approx} 8 kcal mol{sup -1} for the formation of crotyl alcohol) as a function of particle size. In the presence of 130-260 mTorr CO, the reaction rate decreases for all products with a CO reaction order of -0.9 for crotyl alcohol and butyraldehyde over 7.1 nm Pt particles; over 1.7 nm Pt particles, the order in CO is -1.4 and -0.9, respectively. Hydrogen reduction at 673 K after calcination in oxygen results in increased activity and selectivity relative to reduction at either higher or lower temperature; this is discussed with regards to the incomplete removal and/or change in morphology of the polymeric surface stabilizing agent, poly(vinylpyrrolidone) used for the synthesis of the Pt nanoparticles.

  3. Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs,

    E-Print Network [OSTI]

    Kummel, Andrew C.

    /semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs Evgueni A. Chagarov *, Andrew oxides Ge InGaAs InAlAs Oxide­semiconductor stack High-K oxide a b s t r a c t The structural properties of a-Al2O3/Ge, a-Al2O3/In0.5Ga0.5As and a-Al2O3/In0.5Al0.5As/InGaAs interfaces were investigated

  4. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12T23:59:59.000Z

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  5. High-temperature phase equilibria in the Al-rich corner of the Al-Ti-C system

    SciTech Connect (OSTI)

    Frage, N.; Frumin, N.; Levin, L.; Polak, M.; Dariel, M.P. [Ben-Gurion Univ. of the Negev, Beer-Sheva (Israel). Dept. of Materials Engineering

    1998-04-01T23:59:59.000Z

    A thermodynamic analysis of the Al-rich corner in the ternary Al-Ti-C diagram, providing phase relations and regions of phase stability, is presented. An invariant four-phase equilibrium between Al, Al{sub 4}C{sub 3}, Al{sub 3}Ti, and TiC{sub x} takes place at 0.53 at. pct Ti, 7.10{sup {minus}6} at. pct C, and TiC{sub 0.883} at 966 K. The carbon content of the TiC{sub x} phase, which extends from x = 0.48 to 0.98, exerts a significant effect on phase relationships in this ternary system. In particular, it is shown that stoichiometric TiC is not stable in the presence of liquid Al. For example, at 1,300 K, a two-phase equilibrium between Al{sub L} and TiC{sub x} exists only in the 0.91 < x < 0.82 range. Thus, the interaction of Al{sub L} with stoichiometric TiC leads to the formation of the Al{sub 4}C{sub 3} aluminum carbide phase, whereas for x < 0.82, only the intermetallic compound Al{sub 3}Ti can form at this temperature. The results of this analysis were confirmed by X-ray diffraction (XRD) measurements of relevant composites.

  6. Synthesis and characterization of nanocrystalline MgAl{sub 2}O{sub 4} spinel via sucrose process

    SciTech Connect (OSTI)

    Alinejad, Babak [Ceramic Division, Iran University of Science and Technology, 16846-13114 Tehran (Iran, Islamic Republic of)], E-mail: babakvar@yahoo.com; Sarpoolaky, Hosein; Beitollahi, Ali; Saberi, Ali [Ceramic Division, Iran University of Science and Technology, 16846-13114 Tehran (Iran, Islamic Republic of); Afshar, Shahrara [Department of Chemistry, Iran University of Science and Technology, 16846-13114 Tehran (Iran, Islamic Republic of)

    2008-05-06T23:59:59.000Z

    Nanocrystalline MgAl{sub 2}O{sub 4} spinel powder was synthesized using metal nitrates and a polymer matrix precursor composed of sucrose and polyvinyl alcohol (PVA). The precursor and the calcined powders were characterized by simultaneous thermal analysis (STA), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM). According to XRD results, the inceptive formation temperature of spinel via this technique was between 600 and 700 deg. C. The calcined powder at 800 deg. C for 2 h has faced shaped morphology and its crystallite size is in the range of 8-12 nm. Further studies also showed that the amount of polymeric matrix to metal ions has significant influence on the crystallite size of synthesized magnesium aluminate spinel powder.

  7. Fusion of Dilute $A_L$ Lattice Models

    E-Print Network [OSTI]

    Yu-kui Zhou; Paul A. Pearce; Uwe Grimm

    1995-06-17T23:59:59.000Z

    The fusion procedure is implemented for the dilute $A_L$ lattice models and a fusion hierarchy of functional equations with an $su(3)$ structure is derived for the fused transfer matrices. We also present the Bethe ansatz equations for the dilute $A_L$ lattice models and discuss their connection with the fusion hierarchy. The solution of the fusion hierarchy for the eigenvalue spectra of the dilute $A_L$ lattice models will be presented in a subsequent paper.

  8. Radiation Hard AlGaN Detectors and Imager

    SciTech Connect (OSTI)

    None

    2012-05-01T23:59:59.000Z

    Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

  9. Structure and magnetic properties of L1{sub 0}-FePt thin films on TiN/RuAl underlayers

    SciTech Connect (OSTI)

    Yang En; Ratanaphan, Sutatch [Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Zhu Jiangang [Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); ABB Professor of Engineering Department of Electrical and Computer Engineering, Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Laughlin, David E. [Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); ALCOA Professor of Physical Metallurgy Materials Science and Engineering Department, Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

    2011-04-01T23:59:59.000Z

    Highly ordered L1{sub 0} FePt-oxide thin films with small grains were prepared by using a RuAl layer as a grain size defining seed layer along with a TiN barrier layer. Different HAMR (Heat Assisted Magnetic Recording) favorable underlayers were studied to encourage perpendicular texture and preferred microstructure. It was found that the epitaxial and small grain growth from the RuAl/TiN underlayer results in small and uniform grains in the FePt layer with perpendicular texture. By introducing the grain size defining underlayers, the FePt grain size can be reduced from 30 to 6 nm with the same volume fraction (9%) of SiO{sub 2} in the film, excellent perpendicular texture, and very high order parameter at 520 deg. C.

  10. Solution based prompt inorganic condensation and atomic layer deposition of Al{sub 2}O{sub 3} films: A side-by-side comparison

    SciTech Connect (OSTI)

    Smith, Sean W.; Conley, John F., E-mail: jconley@eecs.oregonstate.edu [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331-5501 (United States); Wang, Wei; Keszler, Douglas A. [Department of Chemistry, Oregon State University, Corvallis, Oregon 97331-4003 (United States)

    2014-07-15T23:59:59.000Z

    A comparison was made of Al{sub 2}O{sub 3} films deposited on Si via prompt inorganic condensation (PIC) and atomic layer deposition (ALD). Current–voltage measurements as a function of annealing temperature indicate that the solution-processed PIC films, annealed at 500?°C, exhibit lower leakage and roughly equivalent breakdown strength in comparison to ALD films. PIC films are less dense than as-deposited ALD films and capacitance–voltage measurements indicate a lower relative dielectric constant. On the basis of x-ray photoelectron spectroscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy, it is found that the 500?°C anneal results in the formation of a ?6?nm thick interfacial SiO{sub 2} layer at the Si interface. This SiO{sub 2} interfacial layer significantly affects the electrical performance of PIC Al{sub 2}O{sub 3} films deposited on Si.

  11. Characterization of catastrophic optical damage in Al-free InGaAs/InGaP 0.98 {mu}m high-power lasers

    SciTech Connect (OSTI)

    Park, K.H.; Lee, J.K.; Jang, D.H.; Cho, H.S.; Park, C.S.; Pyun, K.E. [Compound Semiconductor Research Department, Electronics and Telecommunications Research Institute, Yusong P.O. Box 106, Taejon 305-600 (Korea)] [Compound Semiconductor Research Department, Electronics and Telecommunications Research Institute, Yusong P.O. Box 106, Taejon 305-600 (Korea); Jeong, J.Y. [Department of Radio Engineering, Korea University, 5-1 Ka, Anam-Dong, Sungbuk-ku, Seoul 136-701 (Korea)] [Department of Radio Engineering, Korea University, 5-1 Ka, Anam-Dong, Sungbuk-ku, Seoul 136-701 (Korea); Nahm, S. [Department of Material Science and Engineering, Korea University, 5-1 Ka, Anam-Dong, Sungbuk-ku, Seoul 136-701 (Korea)] [Department of Material Science and Engineering, Korea University, 5-1 Ka, Anam-Dong, Sungbuk-ku, Seoul 136-701 (Korea); Jeong, J. [Department of Radio Engineering, Korea University, 5-1 Ka, Anam-Dong, Sungbuk-ku, Seoul 136-701 (Korea)] [Department of Radio Engineering, Korea University, 5-1 Ka, Anam-Dong, Sungbuk-ku, Seoul 136-701 (Korea)

    1998-11-01T23:59:59.000Z

    Catastrophic optical damage (COD) in Al-free InGaAs/InGaP 0.98 {mu}m lasers has been investigated using real-time electroluminescence (EL) and transmission electron microscopy (TEM). From EL images, we observed that multiple bright spots initiated from one of the facets and then propagated to the center of the cavity during the COD process. It is clarified by the TEM analysis that the propagation of bright spots resulted in 60-nm-wide Moir{acute e} fringe along the cavity and the crystalline phase of the active area became polycrystalline. Highly nonradiative polycrystalline phase of the active area is the major cause of COD failure in the Al-free 0.98 {mu}m lasers. {copyright} {ital 1998 American Institute of Physics.}

  12. acceso al agua: Topics by E-print Network

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    actuales de las marcas de agua, dn- doles exibilidad Boyer, Edmond 2 Propuesta de Investigacion Algoritmos de Control de Acceso al Medio en Redes Engineering Websites...

  13. al estudio del: Topics by E-print Network

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    de biocarburantes, podr-an suponer barreras no arancelarias al comercio del bioetanol brasileo. Este anlisis, que involucra el comercio de biocarburantes en el...

  14. al comercio agropecuario: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    de biocarburantes, podr-an suponer barreras no arancelarias al comercio del bioetanol brasileo. Este anlisis, que involucra el comercio de biocarburantes en el...

  15. al sacrificio sobre: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    seminal papers on nuclear astrophysics. Most of our current ideas concerning element formation in stars have followed from those two pioneering and historical works. Al also...

  16. als erstmanifestation einer: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    durch Photoeffekt mit zirkular polarisiertem Licht an einem GaAs-Kristall erzeugt Pir. Als Lichtquelle wird ein Lasersystem verwendet, das linear polarisiertes Licht...

  17. als instrument einer: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    durch Photoeffekt mit zirkular polarisiertem Licht an einem GaAs-Kristall erzeugt Pir. Als Lichtquelle wird ein Lasersystem verwendet, das linear polarisiertes Licht...

  18. als folge einer: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    durch Photoeffekt mit zirkular polarisiertem Licht an einem GaAs-Kristall erzeugt Pir. Als Lichtquelle wird ein Lasersystem verwendet, das linear polarisiertes Licht...

  19. als ursache einer: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    durch Photoeffekt mit zirkular polarisiertem Licht an einem GaAs-Kristall erzeugt Pir. Als Lichtquelle wird ein Lasersystem verwendet, das linear polarisiertes Licht...

  20. analogas al acido: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Environmental Sciences and Ecology Websites Summary: Supporting Information Osborn et al. 10.1073pnas.1100682108 SI Methods Dissolved gas samples were- bons....

  1. atencion integral al: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Joel 1967-09-01 40 Das Elektrofahrzeug als flexibler Verbraucher und Energiespeicher im Smart Home. Open Access Theses and Dissertations Summary: ??Die vorliegende Arbeit...

  2. al desarrollo regional: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    aiuta a realizzarla La Direzione Lavoro della Regione Veneto partecipa al progetto I. E. SMART -Smart Training Energy Storage, Conversion and Utilization Websites Summary: Veneto...

  3. al tratamiento integral: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    eines rckspeisefhigen Elektrofahrzeugs in das Energiemanagement-System eines Smart Home. Ziel ist es, das Elektrofahrzeug bestmglich als flexibel (more) Mltin,...

  4. al cuidado integral: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Joel 1967-09-01 48 Das Elektrofahrzeug als flexibler Verbraucher und Energiespeicher im Smart Home. Open Access Theses and Dissertations Summary: ??Die vorliegende Arbeit...

  5. adaptacin al cambio: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    al Ministerio de Econom-a, Fomento y Reconstruccin o Rudnick, Hugh 5 ARQUITECTURA BASADA EN AGENTES INTELIGENTES Y SERVICIOS WEB PARA LA ADAPTACIN DE CONTENIDOS...

  6. al dengue una: Topics by E-print Network

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    secondary infection with a different serotype and with primary Sujan Shresta 12 UNA ARQUITECTURA SEGMENTADA PARA EL CLCULO DEL TIEMPO AL IMPACTO CON VISIN LOG-POLAR Engineering...

  7. al gen env: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Renaissance AL Massachusetts at Amherst, University of 7 ENVE 415 HYDROLOGY TOPIC SYLLABUS Engineering Websites Summary: Chapters 4, 14 Watershed Delineation, Characteristics...

  8. al disciplinamiento social: Topics by E-print Network

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    Information Technology) Prof. Dr. Andreas Rausch (Software Systems Engineering Zachmann, Gabriel 3 Intagorn et al. Harvesting Geospatial Knowledge from Social Metadata...

  9. al-Qaida Strategy, Ideology, Doctrine, and Media

    ScienceCinema (OSTI)

    Dr. Jarret Brachman

    2010-09-01T23:59:59.000Z

    Dr. Jarret Brachman, an internationally recognized al-Qaida specialist, author and public lecturer, shares his thoughts on a range of topics, including the differences involved in fighting insurgent groups versus terrorist organizations, the future of the global al-Qaida movement, and assessing America's efforts to combat al-Qaida. In his talk, Brachman focuses specifically on current trends in al-Qaida's military and messaging strategies, both from the perspective of the group's senior leadership and its regional commands. Presented on June 17, 2010.

  10. al matrix composite: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materialia 65 (2011) 288291 Extreme anelastic responses in Zn80Al20 matrix composite materials containing Materials Science Websites Summary: Scripta Materialia 65 (2011)...

  11. al matrix composites: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materialia 65 (2011) 288291 Extreme anelastic responses in Zn80Al20 matrix composite materials containing Materials Science Websites Summary: Scripta Materialia 65 (2011)...

  12. al cambio climtico: Topics by E-print Network

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    Websites Summary: Mundial de la Biosfera (UNESCO), Parque Nacional Torres del Paine, Patagonia - Chile 2012: Una Experiencia al Parque Nacional y Reserva Mundial de la Biosfera...

  13. ALS Technique Gives Novel View of Lithium Battery Dendrite Growth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Technique Gives Novel View of Lithium Battery Dendrite Growth Print Lithium-ion batteries, popular in today's electronic devices and electric vehicles, could gain significant...

  14. als beitrag zum: Topics by E-print Network

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    Philipps-Universitt Mar- burg 02. Dezember 2013 Sport als Sucht: soziologische Hoffmann, Rolf 15 EINLADUNG ZUM KOLLOQUIUM Dr. Stefan Krebs Mathematics Websites Summary: (...

  15. als schluessel zum: Topics by E-print Network

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    Philipps-Universitt Mar- burg 02. Dezember 2013 Sport als Sucht: soziologische Hoffmann, Rolf 7 EINLADUNG ZUM KOLLOQUIUM Dr. Stefan Krebs Mathematics Websites Summary: (...

  16. als knstler und: Topics by E-print Network

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    Verbindungen mit Lithium 18 2.1.3 Elektrolyte Hoffmann, Rolf 5 Wachstum und Realstruktur von epitaktischen (Al,Ga)N-Schichten. Open Access...

  17. als geschichtliches und: Topics by E-print Network

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    Verbindungen mit Lithium 18 2.1.3 Elektrolyte Hoffmann, Rolf 5 Wachstum und Realstruktur von epitaktischen (Al,Ga)N-Schichten. Open Access...

  18. al tratamiento nutricional: Topics by E-print Network

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    Krishnamoorthy1* Abstract in the wild type (WT) protein, such as increased or decreased stability, reactivity, or solubility Krishnamoorthy, Bala 288 Vilain et al. AJMA...

  19. al settore delle: Topics by E-print Network

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    stampantiscanner Computer Technologies and Information Sciences Websites Summary: 7232, che si trova presso la portineria di ingresso al Palazzo San Niccol pu...

  20. al regolamento emas: Topics by E-print Network

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    stampantiscanner Computer Technologies and Information Sciences Websites Summary: 7232, che si trova presso la portineria di ingresso al Palazzo San Niccol pu...