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- Influence of electron injection on the photoresponse of ZnO homojunction diodes
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- Influence of electron injection on the temporal response of ZnO homojunction photodiodes
- Al/Ti contacts to Sb-doped p-type ZnO L. J. Mandalapu, F. X. Xiu, Z. Yang, and J. L. Liua
- Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by molecular-beam epitaxy
- Bi-induced acceptor states in ZnO by molecular-beam epitaxy F. X. Xiu, L. J. Mandalapu, Z. Yang, and J. L. Liua
- ZnO Growth on Si with Low-Temperature CdO and ZnO Buffer Layers by Molecular-Beam Epitaxy
- Donor and acceptor competitions in phosphorus-doped ZnO F. X. Xiu, Z. Yang, L. J. Mandalapu, and J. L. Liua
- Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection
- Sb surfactant-mediated SiGe graded layers for Ge photodiodes integrated on Si
- Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy
- High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. Liua
- MOSFET ,,,,~~~ i,' , ` ,",, , ,--
- Optical properties of Ge/Si quantum dot superlattices Zheng Yanga,*, Yi Shia
- Cyan electroluminescence from n-ZnO/i-CdZnO/p-Si heterojunction diodes Lin Li, Zheng Yang and Jianlin Liu
- A Novel Approach to Evaluate the Carrier Effective Mass in GeSi Quantum Dot Structure
- p-type ZnO films with solid-source phosphorus doping by molecular-beam F. X. Xiu, Z. Yang, L. J. Mandalapu, and J. L. Liua
- IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 10, NO. 3, MAY 2011 499 TiSi2 Nanocrystal Metal Oxide Semiconductor Field
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- Low-resistivity Au/Ni Ohmic contacts to Sb-doped p-type ZnO L. J. Mandalapu, Z. Yang, and J. L. Liua
- (~' ,~' 210093) (>,,--,,~~` ,~' 210093)
- 0-7803-8668-X/04/$20.00 2004 IEEE 139 Structural Characteristics of Self-assembled Ge/Si
- Electrically pumped ultraviolet ZnO diode lasers on Si Sheng Chu, Mario Olmedo, Zheng Yang, Jieying Kong, and Jianlin Liua
- Microstructure and transport properties of ZnO:Mn diluted magnetic semiconductor thin films
- Electron concentration dependent magnetization and magnetic anisotropy in ZnO:Mn thin films
- P-type ZnO by Sb doping for PN-junction photodetectors J. L. Liu, F. X. Xiu, L. J. Mandalapu, Z. Yang
- Ultraviolet light emissions in MgZnO/ZnO double heterojunction diodes by molecular beam epitaxy
- Characteristics of a phosphorus-doped p-type ZnO film by MBE F. X. Xiu, Z. Yang, L. J. Mandalapu, and J. L. Liu
- 2001.6.21 1 2001.6.21 2
- Ultraviolet emission from Sb-doped p-type ZnO based heterojunction light-emitting diodes
- Delivered by Ingenta to: University of California, Riverside Libraries
- Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77 K and 300 K
- Supplemental Materials Thermal annealing effect on spin coherence in ZnO single crystals
- Study of rapid thermal annealing effect on CdZnO thin films grown on Si L. Li, Z. Yang, Z. Zuo, J. Y. Kong, and J. L. Liua
- Electron carrier concentration dependent magnetization and transport properties in ZnO:Co diluted magnetic semiconductor thin films
- Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy
- Thermal annealing effect on spin coherence in ZnO single crystals Z. Yang,1,a),b)
- Oxide Electronics Utilizing Ultrafast Metal-Insulator
