- Surface morphology of Si(111)-(7 7) under an external isotropic tensile Y. Wei, L. Li, and I. S. T. Tsong
- Step structure of arsenic-terminated vicinal Ge ,,100... S. Gan, L. Li, M. J. Begarney, D. Law, B.-K. Han, and R. F. Hicksa)
- Hydrogen Adsorption on the Indium-Rich Indium Phosphide (001) Surface: A Novel Way to Produce Bridging In-H-In
- ELSEVIER Surface Science 398 (1998) 3866394 Observation of the atomic surface structure of GaAs (001) films
- Electron standing waves on GaN(0001)-pseudo (1x1) surface: A FT-STM study at room temperature
- Arsenic adsorption and exchange with phosphorus on indium phosphide ,,001... D. C. Law,1
- Atomistic View of the Autosurfactant Effect during GaN Epitaxy S. T. King, M. Weinert, and L. Li*
- The reaction of carbon tetrachloride with gallium arsenide ,,001... L. Li., S, Gan, B.-K. Han, H. Qi, and R. F. Hicksa)
- Structure and composition of the c,,4 4... reconstruction formed during gallium arsenide metalorganic vapor-phase epitaxy
- Si-and C-rich structure of the 6H-SiC(0001) surface Y. Hasegawa, and T. Sakurai
- IOP PUBLISHING NANOTECHNOLOGY Nanotechnology 20 (2009) 355701 (4pp) doi:10.1088/0957-4484/20/35/355701
- Electronic structures of Mn-induced phases on GaN(0001) Y. Qi, G. F. Sun, M. Weinert, and L. Li*
- Role of Mn and H in formation of cubic and hexagonal GaMnN V. K. Lazarov,a
- Role of Defect Sites and Ga Polarization in the Magnetism of Mn-Doped GaN D. J. Keavney,1
- Cubic GaN formation in MnGaN multilayer films grown on 6H-SiC,,0001... Y. Cui, V. K. Lazorov, M. M. Goetz, H. Liu, D. P. Robertson, M. Gajdardziska-Josifovska,
- Evolution of spirals during molecular beam epitaxy of GaN on 6H-SiC,,0001... Y. Cui and L. Li*
- Suppression of phase segregation during molecular-beam epitaxial growth of GaMnN using nitrogenhydrogen plasma
- Stress-induced anisotropy of phosphorous islands on gallium arsenide Chemical Engineering Department, University of CaliforniaLos Angeles, Los Angeles,
- Ab initio cluster calculations of hydrogenated GaAs,,001... surfaces Chemical Engineering Department, University of California, Los Angeles, California 90095-1592
- Determination of InP,,001... surface reconstructions by STM and infrared spectroscopy of adsorbed hydrogen
- VOLUME 82, NUMBER 9 P H Y S I C A L R E V I E W L E T T E R S 1 MARCH 1999 Example of a Compound Semiconductor Surface that Mimics Silicon
- Surface phases of GaAs and InAs ,,001... found in the metalorganic vapor-phase epitaxy environment
- Characterization of dislocations in germanium substrates induced by mechanical stress
- Effect of surface polarity on gallium adsorption on 6H-SiC surfaces L. Li, C. Tindall, Y. Hasegawa, and T. Sakurai
- STM study of C2H2 adsorption on Si,,001... L. Li, C. Tindall, O. Takaoka, Y. Hasegawa, and T. Sakurai
- Interaction of C60 with the (3 3) and ( 3 3) surfaces of 6H-SiC,,0001...: Adsorption, decomposition, and SiC growth
- Field-ion scanning tunneling microscopy study of the atomic structure of 6HSiC(0001) surfaces cleaned by in situ Si molecular beam etching
- Etching of Si(111)-(7 7) and Si(100)-(2 1) surfaces by atomic hydrogen Yi Wei, Lian Li, and I. S. T. Tsonga)
- Surface Science Letters A (10 10) domain wall structure induced by Mn
- Selected Growth of Cubic and Hexagonal GaN Epitaxial Films on Polar MgO(111) V. K. Lazarov,* J. Zimmerman, S. H. Cheung, L. Li, M. Weinert, and M. Gajdardziska-Josifovska
- Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy
- Observation of standing waves at steps on the GaN,,0001... pseudo-,,11... surface by scanning tunneling spectroscopy at room temperature
- Reflectance-difference spectroscopy of mixed arsenic-rich phases of gallium arsenide ,,001... M. J. Begarney,1
- Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy
- Surface morphology induced by Ga and Sn overlayers on Si (100) and Si (311) surfaces
- ELSEVIER Surface Science 351 (1996) 141-148 surface science
- Indium phosphide ,,001...-,,21...: Direct evidence for a hydrogen-stabilized surface reconstruction
