- Sernicond. Sci. Technol. 5 (1990) 702-706. Printed in the UK I Photothermaldeflectionspectroscopy of
- Anomalous features in the optical properties of Al1xInxN on GaN grown by metal organic vapor phase epitaxy
- Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm, Mingwei Zhu
- Si in GaN on the nature of the background donor C. Wetzel, A.L. Chen, T. Suski, J.W. Ager III, and W. Walukiewicz
- in Compound Semiconductors 1997. Proc. IEEE 24th Int. Symp. on Compound Semiconductors. Eds. M. Melloch, M.A. Reed, New York, NY, USA, IEEE, 1998. p. 239-44 of xxvii+666 pp.
- phys. stat. sol. (c) 0002, No. z, zzzzzz (2003) / DOI 10.1002/pssc.200300000 1 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Low-Temperature Cathodoluminescence Mapping of Green, Blue, and UV GaInN/GaN Yong Xia1,2
- Observation of photoluminescence from Al1 xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy
- This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research
- Mater. Sci. Forum 196-201, 31-6 (1995). (18th Int. Conf. on Defects in Semiconductors, Sendai, Japan, July 23-28, 1995)
- Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure C. Wetzel, W. Walukiewicz, E. E. Haller, and J. Ager III
- in Gallium Nitride and Related Materials, Eds. F. Ponce, R.D. Dupuis, S. Nakamura, and J.A. Edmond, Proc. Mat. Res. Soc. Symp. 395, 417 (1996).
- A9.3 O, C, and other unintentional impurities in GaN and related compounds
- Light-emitting diode development on polar and non-polar GaN substrates C. Wetzel a,b,, M. Zhu a,b
- The IEE -Properties, processing and applications of gallium nitride and related semicondu.. Page 1 of 6 http://www.iee.org/Publish/Books/EMIS/em023c.cfm 07/22/03
- Localized vibrational modes in GaN:O tracing the formation of oxygen DX-like centers under hydrostatic pressure
- Quantized states in homogenous polarized GaInN GaN quantum wells
- Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures
- Composition dependence of the in-plane effective mass in lattice-mismatched, strained Ga , Jn,As/lnP single quantum wells
- 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics
- A4.2 Raman and IR studies of InN C. Wetzel and I. Akasaki
- [an error occurred while processing this directive] site search
- A5.2 Raman and IR reflectance studies of AlGaN C. Wetzel and I. Akasaki
- Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Yufeng Li ( ,1
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 10, OCTOBER 2010 2639 Boosting Green GaInN/GaN Light-Emitting Diode
- Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes
- GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization
- Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells
- Ninth International Conference on Solid State Lighting Conference 7422 -Proceedings of SPIE Volume 7422
- IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 55, NO. 6, DECEMBER 2008 3633 Radiation Effects on InGaN Quantum Wells
- Superluminescence in Green Emission GaInN/GaN Quantum Well Structures under Pulsed Laser Excitation
- Green Light Emitting Diodes under Photon Modulation Yufeng Li1,2
- Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes
- 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics
- Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy
- Loss of Quantum Efficiency in Green Light Emitting Diode Dies at Low Temperature
- Radiation damage mechanisms for luminescence in Eu-doped GaN J. W. Tringe,a
- Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting
- p s scurrent topics in solid state physics www.pss-c.com
- Analysis of the Quantum Efficiency of GaInN/GaN Light Emitting Diodes in the Range of 390 -580 nm
- C. Wetzel et al MRS Internet J. Nitride Semicond. Res. 10, 2 (2005) 1 Development of High Power Green Light Emitting Diode Chips
- GaInN/GaN growth optimization for high-power green light-emitting diodes C. Wetzel,a)
- Optical Absorption in Polarized Ga1xInxN/GaN Quantum Wells Christian WETZEL
- Piezoelectric polarization in the radiative centers of GaInN GaN quantum wells and devices.
- Physica B 273}274 (1999) 109}112 Correlation of vibrational modes and DX-like
- PIEZOELECTRIC EFFECTS IN GaInN GaN HETEROSTRUCTURES AND QUANTUM WELLS
- Optical band gap in Ga1 xInxN,,0
- MRS Internet J. Nitride Semicond. Res. 3, 31 (1998). 1 1998-1999 The Materials Research Society
- Journal of Crystal Growth 195 (1998) 309--313 Structural and optical properties of AlInN and AlGaInN
- 1998 IEEE Semiconducting and Insulating Materials Conference (Inst. Electrical and Electronics Engineers, Inc. Piscataway 1999) p. 239-242.
- Journal of Crystal Growth 189/190 (1998) 621--624 Valence band splitting and luminescence Stokes shift in
- VOLUME 78, NUMBER 20 P H Y S I C A L R E V I E W L E T T E R S 19 MAY 1997 Pressure Induced Deep Gap State of Oxygen in GaN
- Properties of GaN grown at high rates on sapphire and on 6HSiC S. Fischer,a)
- In Gallium Nitride and Related Materials, Eds. F. Ponce, R.D. Dupuis, S. Nakamura, and J.A. Edmond, Proc. Mat. Res. Soc. Symp. 395, 571 (1996).
- Strongly localized excitons in gallium nitride C. Wetzel,a)
- Two-dimensional Wannier excitons -effects of a random adiabatic Al. L. Efros[*] and C. Wetzel[**]
- On p-type doping in GaN--acceptor binding energies S. Fischer, C. Wetzel,a)
- GaN epitaxial layers grown on WI-SIC by the sublimation sandwich C. Wetzel,a) D. Volm, and B. K. Meyer
- Solid-State Electronics Vol. 37. Nos 4-6. pp. 669-672, 1994 Copyright ~ 1994Elsevier Science Ltd
- Journal of CrystalGrowth 128(1993)567-570 )........ CRYSTAL North-Holland GROW T H
- Conference 5739, SPIE International Symposium Integrated Optoelectronic Devices, 22-27 Jan 2005, San Jose, CA Development of high power green light emitting diode dies in
- A3.2 Raman and IR studies of GaN C. Wetzel and I. Akasaki
- PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS
- DEFECT AND STRESS CONTROL OF ALGAN AND FABRICATION OF HIGH-EFFICIENCY UV-LED
- Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
- MRS Online Publications Page 1 of 12 http://www.mrs.org/publications/epubs/proceedings/fall2000/g/ 07/22/03
- Quantized states in Ga1xInxNGaN heterostructures and the model of polarized homogeneous quantum wells
- Very high quality AlN grown on ,,0001... sapphire by metal-organic vapor phase epitaxy
- Spin dependent recombination in F&doped silicon p-n junctions P. Christmann, C. Wetzel, and B. K. Meyer
- Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract--In metal organic vapor phase epitaxy we developed
- Int. Conf. on the Physics of Semiconductors, Berlin, Germany, July 21-26, 1996 (Eds. M. Scheffler, R. Zimmermann, World Scientific, Singapore 1996) p. 2929-32. Vol. 4.
- phys. stat. sol. (c), 14 (2004) / DOI 10.1002/pssc.200405083 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Proc. of the 18th Electronic Materials Symposium, Shirahama-shi, Wakayama-ken, June 30 -July 2, 1999. Structural and optical properties of Al1-xInxN
- Physica B 184 (1993) 164-167 North-Holland PHYSICA[
- Physica B 302303 (2001) 2338 DX-like behavior of oxygen in GaN
- Green light emitting diodes on a-plane GaN bulk substrates Theeradetch Detchprohm,1,a
- Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures , T. Takeuchi2
- Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy
- Optical transitions in piezoelectrically polarized GaInNGaN quantum wells C. Wetzela)
- Dynamics of bound-exciton luminescences from epitaxial GaN L. Eckey,a)
- MRS Online Publications Page 1 of 10 http://www.mrs.org/publications/epubs/proceedings/fall2002/l/ 07/22/03
- Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes
- in Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, Eds. S. DenBaars, J. Palmour, M. Shur, and M. Spencer, Proc. Mat. Res. Soc. Symp., 512, 181-6 (1998).
- submitted to 2nd Int. Symposium on Blue Laser and Light Emitting Diodes, Chiba September 1998
- LOCALIZED DONORS IN GaN: SPECTROSCOPY USING LARGE PRESSURES
- IMPROVEMENT OF CRYSTALLINE QUALITY OF GROUP III NITRIDES ON SAPPHIRE USING LOW TEMPERATURE INTERLAYERS
- phys. stat. sol. (b) 216, 683 (1999) Subject classification: 68.55.Jk; S7.14; S7.15
- Current and optical low-frequency noise of GaInN/GaN green light emitting diodes
- 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics
- Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes
- Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers
- in Defect and Impurity Engineered Semiconductors and Devices, Eds. S. Ashok, J. Chevallier, I. Akasaki, N.M. Johnson, and B.L. Sopori, Proc. Mat. Res. Soc. Symp. 378, 509-14 (1995).
- Materials Science and Engineering B59 (1999) 382385 GaN-based laser diode with focused ion beam-etched mirrors
- Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric Ga1 xInxN/GaN quantum-well structures
- Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures
- 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim phys. stat. sol. (b) 245, No. 5, 916919 (2008) / DOI 10.1002/pssb.200778686
- Future Challenges and Directions for Nitride Materials and Light Emitters
- Piezoelectric FranzKeldysh effect in strained GaInN/GaN heterostructures C. Wetzel,a)
- Structural Analysis in Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes Mingwei Zhu1,2
- Application of microwave detection of the Shubnikov-de Haas effect in two-dimensional systems
- Optimization of High-Quality AlN Epitaxially Grown on (0001) Sapphire by Metal-Organic Vapor-Phase Epitaxy
- In III-V Nitrides, Eds. F. Ponce, T.D. Moustakas, I. Akasaki, and B. Monemar, Proc. Mat. Res. Soc. Symp. 449, 567-72 (1997).
