- Journal of Crystal Growth 235 (2002) 129134 Low-dislocation-density GaN and AlxGa1xN (xp0.13)
- Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface
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- phys. stat. sol. (c) 1, No. 10, 24212424 (2004) / DOI 10.1002/pssc.200405083 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- phys. stat. sol. (c) 2, No. 7, 28712873 (2005) / DOI 10.1002/pssc.200461391 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Takeuchi, Detchprohm, Iwaya, Hayashi, Isomura, Kimura, Yamaguchi, Yamaguchi, Wetzel, Amano, Akasaki, Kaneko,
- Schottky barrier on n-type GaN grown by hydride vapor hase epitaxy P. Hacke, T. Detchprohm, K. Hiramatsu, and N. Sawaki
- phys. stat. sol. (b) 216, 399 (1999) Subject classification: 78.55.Cr; 71.70.Ej; 77.65.Ly; S7.14; S7.15
- Hydride vapor phase epitaxial growth of a high quality GaM film using a ZnO buffer layer
- Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers
- Solid State Communications, Vol. 96, No. 2, pp. 53-56, 1995 Elsevier Science Ltd
- Deep levels in the upper band-gap region of lightly Mg-doped GaN P. Hacke,a)
- ELSEVIER Journal of Crystal Growth 170 (1997) 325-328 j........ CRYSTAL
- Solid-State ElectronicsVol.41, No. 2, pp. 287-294,1997 1997ElsevierScienceLtd
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- Solid-State Electronics Vol.41, No. 2, pp. 239-241,1997 1997ElsevierScienceLtd
- *Corresponding author. Fax: #81 48 462 4659; e-mail: hacke@postman.riken.go.jp.
- HETEROEPITAXY AND CHARACTERIZATION OF LOW-DISLOCATION-DENSITY T. Detchprohm1
- Growth Mechanism and Characterization of Low-Dislocation-Density AlGaN Single Crystals Grown
- Journal of Crystal Growth 237239 (2002) 10651069 Reduction of threading dislocation density in AlXGa1XN
- GaInN/GaN growth optimization for high-power green light-emitting diodes C. Wetzel,a)
- Solid State Co~u~tio~, Vol. 99, No. 5, PII soo38-1098(96po193-7
- J. Phys. D.Appl. Phys.28 (1995) 1169-1174. Printedin the UK I The barrierheightand interfaceeffect of 1
- phys. stat. sol. (a) 176, 31 (1999) Subject classification: 68.35.Ct; 68.65.+g; 78.45.+h; S7.14
- phys. stat. sol. (a) 176, 147 (1999) Subject classification: 73.40.Sx; 78.66.Fd; S7.14; S7.15
- Improvement of far-field pattern in nitride laser diodes T. Takeuchi,a)
- 252 Wetzel, Detchprohm, Takeuchi, Amano, and AkasakiJournal of ELECTRONIC MATERIALS, Vol. 29, No. 3, 2000 (Received June 28, 1999; accepted November 11, 1999)
- Photoluminescence of residual transition metal impurities in GaN J. Baur, U. Kaufmann, M. Kunzer, and J. Schneider
- Low-dislocation-density AlxGa1(xN single crystals grown on grooved substrates
- Demonstration of Flame Detection in Room Light Background
- Invited Paper Detailed Feasibility Study on Flame Detector using A1GaN Photosensors
- Transverse mode control in GaN-based laser diodes Hiroshi Amano, Satoshi Kamiyama, Theeradetch Detchprohm, Toshiyuki Sato,
- Development of high power green light emitting diode dies in piezoelectric GaInN/GaN
