- Magnetoconductance oscillations in graphene antidot arrays T. Shen,1,2
- Spontaneous Spin Polarization in Quantum Point Contacts L. P. Rokhinson,1
- Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si
- SiGe quantum dot single-hole transistor fabricated by atomic force microscope nanolithography and silicon epitaxial-regrowth
- Weak localization in Ga1-xMnxAs: Evidence of impurity band transport L. P. Rokhinson and Y. Lyanda-Geller
- arXiv:cond-mat/01021076Feb2001 Spin-related transport in ultra small Si
- Effect of Strain on Stripe Phases in the Quantum Hall Regime Sunanda P. Koduvayur,1
- PUBLISHED ONLINE: 2 AUGUST 2009 | DOI: 10.1038/NPHYS1362 Evidence for reversible control of magnetization in
- Valley splitting in Si quantum dots embedded in SiGe S. Srinivasan,1,2
- Atomic force microscope local oxidation nanolithography of graphene Lishan Weng,a
- Anisotropic Modification of the Effective Hole g Factor by Electrostatic Confinement S. P. Koduvayur,1,* L. P. Rokhinson,1
- N Nanostructures in GaAs Fabricated by Molecular Beam Epitaxy
- Spin Separation in Cyclotron Motion L. P. Rokhinson* and V. Larkina
- Spin-Separation in Cyclotron Motion. Authors: L. P. Rokhinson, Y. B. Lyanda-Geller, L. N. Pfeiffer, and K. W.
- Submitted to Device Research Conference, June 2003 SiGe Single-Hole Transistor Fabricated by AFM Oxidation and Epitaxial Regrowth
- doi:10.1016/S0749-6036(02)00120-9 Superlattices and Microstructures, Vol. 32, Nos 23, 2002
- Temperature dependence of electron transfer in coupled quantum wells Amlan Majumdara)
- Electron transfer in voltage tunable two-color infrared photodetectors Amlan Majumdara)
- Effective mass enhancement of two-dimensional electrons in a one-dimensional superlattice potential
- Double-dot charge transport in Si single-electronhole transistors L. P. Rokhinson,a)
- Corrugated quantum well infrared photodetectors for polarization detection C. J. Chen,a)
- Magnetoresistance of composite fermions at 1 L. P. Rokhinson*
- Two-color quantum-well infrared photodetector with voltage tunable peaks Amlan Majumdara)
- Nanopatterning of SiSiGe electrical devices by atomic force microscopy Xiang-Zheng Bo,a)
- IOP PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 20 (2008) 164212 (7pp) doi:10.1088/0953-8984/20/16/164212
- Si/SiGe Nanostructures Fabricated by Atomic Force Microscopy Oxidation Xiang-Zheng Bo, Leonid P. Rokhinson, Haizhou Yin, D. C. Tsui, and J. C. Sturm
- A characterization technique for quantum well infrared photodetectors C. J. Chen, K. K. Choi,a),b)
- Quantum grid infrared photodetectors L. P. Rokhinson,a)
- GaMnAs-based hybrid multiferroic memory device M. Overby,1
- Effect of strain on stripe phases in the Quantum Hall regime Sunanda P. Koduvayur,1
- Towards a voltage tunable two-color quantum-well infrared photodetector Amlan Majumdara)
- Electron transfer based voltage tunable two-color quantum-well infrared photodetectors
- Direct optical measurement of the valence band offset of p Si1 x yGexCy /p Si,,100... by heterojunction internal photoemission
- Optimization of blazed quantum-grid infrared photodetectors L. P. Rokhinson,a)
