- Decay of zone-center phonons in AlN with A1, E1, and E2 symmetries P. Pandit, D. Y. Song, and M. Holtza
- The influence of phonons on the optical properties of GaN D. Y. Song, M. Basavaraj, S. A. Nikishin, and M. Holtza
- Vibrational properties of AlN grown on ,,111...-oriented silicon T. Prokofyeva, M. Seon, J. Vanbuskirk, and M. Holtz*
- Micro-Raman Scattering From Hexagonal GaN, AlN, and AlxGa1-xN Grown on (111) Oriented Silicon: Stress Mapping of Cracks
- Plasma Etching Transfer of a Nanoporous Pattern on a Generic L. Menon,a,z
- Effects of power truncation on the insertion loss and crosstalk of arrayed-waveguide grating devices
- Dongqing Li: Encyclopedia of Micro-and Nano-Fluidics --Entry 282 --2007/10/5 --20:30 --page 1 --LE-TEX Peristaltic Pumps 1
- Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations
- Proceedings of IMECE 2007 2007 ASME International Mechanical Engineering Congress and Exposition
- Dependence of the stresstemperature coefficient on dislocation density in epitaxial GaN grown on -Al2O3 and 6HSiC substrates
- Si-doped AlxGa1-xN,,0.56 1... layers grown by molecular beam epitaxy with ammonia
- Optical phonon decay in bulk aluminum nitride D. Y. Song and M. Holtza
- IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 43, NO. 6, JUNE 2007 473 Ultrafast Response of Arrayed Waveguide Gratings
- Decay of zone-center phonons in GaN with A1, E1, and E2 symmetries D. Y. Song, S. A. Nikishin, and M. Holtza
- Direct space-to-time pulse shaper with reflective arrayed waveguide gratings and phase
- Analysis of nonselective plasma etching of AlGaN by CF4/Ar/Cl2 V. Kuryatkov, B. Borisov, J. Saxena, S. A. Nikishin,a
- Strain-induced disorder, phase transformations, and transformation-induced plasticity in hexagonal boron
- MEMS @MEMS @ Texas TechTexas Tech
- 1 Copyright 20xx by ASME Proceedings of IMECE2007
- IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 40, NO. 12, DECEMBER 2004 1725 Control of Center Wavelength in Reflective-Arrayed
- Evolution of surface roughness of AlN and GaN induced by inductively coupled Cl2 Ar plasma etching
- The influence of interface roughness on electrical transport in nanoscale metallic multilayers
- Nanoscale surface roughening in ultrathin aluminum films D. Aurongzeb, E. Washington, M. Basavaraj, J. M. Berg, H. Temkin, and M. Holtza
- Short-period superlattices of AlN/Al0.08Ga0.92N grown on AlN substrates S. A. Nikishin,a)
- TEXMEMS VIITEXMEMS VII Quantification of inducedQuantification of induced
- Selective growth of high quality GaN on Si,,111... substrates M. Seon, T. Prokofyeva, and M. Holtza)
- Influence of nanocrystal growth kinetics on interface roughness in nickelaluminum multilayers
- 1398 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 15, NO. 10, OCTOBER 2003 Reflective Arrayed Waveguide Grating Multiplexer
- Depth dependence of defect density and stress in GaN grown on SiC Department of Electrical and Computer Engineering, University of Delaware, 140 Evans Hall, Newark,
- Morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy on sapphire and template substrates
- Electrical properties of pn junctions based on superlattices of AlNAlGa,,In...N
- 2200 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 10, OCTOBER 2005 High-Resolution Pulse Shaper Based on Arrays of
- IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 3, MARCH 2004 831 Temperature-Insensitive Reflective
- 1828 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 22, NO. 7, JULY 2004 Mirror Quality and the Performance of Reflective
- Growth mechanism of AlN by metal-organic molecular beam epitaxy I. Gherasoiu,a)
- Enhanced luminescence from AlxGal-xN/AlyGa l_yNquantum wells grown by gas source molecular beam epitaxy with ammonia
- JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 16, NO. 5, OCTOBER 2007 1269 Thin-Film Thermal Conductivity Measurement
- X-ray diffraction study of AlN/AlGaN short period superlattices A. Chandolu, S. Nikishin,a
- Influence of photonic nanotexture on the light extraction efficiency of GaN L. Tian, N. Stojanovic, D. Y. Song, A. A. Bernussi, J. M. Berg, and M. Holtza
- Transmission properties of nanoscale aperture arrays in metallic masks on optical fibers
- 22 IEEE ELECTRON DEVICE LETTERS, VOL. 27, NO. 1, JANUARY 2006 Low-Resistance Ohmic Contacts to Digital
- Deep ultraviolet photodetectors grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates
- Diffusion process and formation of super-spin-glass state in soft magnetic Fe/Pt system
- 247 nm solar-blind ultraviolet p-i-n photodetector V. V. Kuryatkov, B. A. Borisov, and S. A. Nikishina
- 1158 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 18, NO. 10, MAY 15, 2006 Generation of Ultrafast Pulse Sequences With
- Formation of nickel nanodots on GaN D. Aurongzeb, K. Bhargava Ram, and M. Holtza
- Self-heating study of an AlGaN/GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering
- INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 17 (2005) 26552662 doi:10.1088/0953-8984/17/17/013
- Optical properties of a nanoporous array in silicon L. Tian, K. Bhargava Ram, I. Ahmad, L. Menon, and M. Holtza)
- Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition
- Self-assembly of faceted Ni nanodots on Si,,111... D. Aurongzeb, S. Patibandla, and M. Holtza
- IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 8, AUGUST 2005 1743 Reconfigurable Optical Filter Based on
- IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 9, SEPTEMBER 2005 1959 Reconfigurable Direct Space-to-Time Pulse-Shaper
- Ignition studies of AlFe2O3 energetic nanocomposites L. Menon,a)
- 488 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 2, FEBRUARY 2004 Electric Field Distribution in a Grating of a Folded
- IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 10, OCTOBER 2004 2257 Reconfigurable Sampling of the Electric Field at the
- Solar-blind ultraviolet photodetectors based on superlattices of AlNAlGa,,In...N
- AlNAlGaInN superlattice light-emitting diodes at 280 nm G. Kipshidze, V. Kuryatkov, K. Zhu, and B. Borisov
- 788 IEEE SENSORS JOURNAL, VOL. 3, NO. 6, DECEMBER 2003 Microfabrication and Characterization of
- 874 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 39, NO. 7, JULY 2003 Silicon-Dioxide Waveguides With Low Birefringence
- JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 21, NO. 6, JUNE 2003 1557 High-Precision Characterization of Single-Mode
- Optical properties of GaN grown on Si ,,111... by gas source molecular beam epitaxy with ammonia
- Deep Ultraviolet AlGaInN-Based Light-Emitting Diodes on Si(111) and Sapphire
- Preparation of Optoelectronic Devices Based on AlN/AlGaN Superlattices M. Holtz,a,b
- Visible and ultraviolet Raman scattering studies of Si1xGex alloys Department of Physics, Texas Tech University, Lubbock, Texas 79409-1051
- MRS spring meeting San Francisco, April 5-9, 1999, paper Y5.21 DIELECTRIC FUNCTION OF AlN GROWN ON Si (111) BY MBE
- TEXMEMS VII -SUMMiT V TTU Chain System -S. Holt, T. Dallas, R. Gale, J. Berg 1 SUMMiT V TTUSUMMiT V TTU Chain SystemChain System
- AlGaInN-based ultraviolet light-emitting diodes grown on Si,,111... G. Kipshidze, V. Kuryatkov, and B. Borisov
- SUMMiT V design of a Micro X-Y Scanner with pseudo-AFM tip
- Enhanced deep ultraviolet luminescence from AlGaN quantum wells grown in the three-dimensional mode
- Plasma etching of AlNAlGaInN superlattices for device fabrication K. Zhu, V. Kuryatkov, B. Borisov, G. Kipshidze, S. A. Nikishin, and H. Temkin
- Deep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGa(In)N Sergey A. NIKISHIN
- Digital Alloys of AlN/AlGaN for Deep UV Light Emitting Diodes Sergey A. NIKISHIN
