- Gain and current-density calculation in IV-VI quantum well lasers M. F. Khodr and P. J. McCann
- Molecular beam epitaxy of PbSrSe and PbSePbSrSe multiple quantum well structures for use in midinfrared light emitting devices
- Molecular beam epitaxy growth of PbSe on BaF2-coated Si,,111... and observation of the PbSe growth interface
- Excitonic line broadening in PbSrSe thin films grown by molecular beam epitaxy
- Band gaps, effective masses and refractive indices of PbSrSe thin films: Key properties for mid-infrared optoelectronic device applications
- Growth and characterization of PbSe and Pb1 xSnxSe on Si ,,100... H. K. Sachar,a)
- 1604 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 34, NO. 9, SEPTEMBER 1998 Optimizing and Engineering
- Magnetoreflectivity of Pb1 xEuxTe epilayers and PbTe/Pb1 xEuxTe multiple quantum wells Shu Yuan,* Heinz Krenn, Gunther Springholz, Yukio Ueta, and Gunther Bauer
- Liquid phase epitaxy growth of Pb,-$nse 1+Te,, alloys lattice matched
- Molecular beam epitaxial growth of Eu-doped CaF2 and BaF2 on Si X. M. Fang, T. Chatterjee, and P. J. McCann
- Molecular beam epitaxial growth of IVVI multiple quantum well structures on Si,,111... and BaF2,,111... and optical studies of epilayer heating
- January 15, 2002 / Vol. 27, No. 2 / OPTICS LETTERS 107 Simultaneous NO and CO2 measurement in human breath with
- Nitric oxide breath testing by tunable-diode laser absorption spectroscopy: application in
- Reflection high-energy electron diffraction study of the molecular beam epitaxial growth of CaF2 on Si(110)
- 22 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 12, NO. 1, JANUARY 2000 Fabrication of Thin-Film Cleaved Cavities Using a
- Unambiguous observation of subband transitions from longitudinal valley and oblique valleys in IVVI multiple quantum wells
- 374 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 15, NO. 3, MARCH 2003 Development of a Novel Epitaxial-Layer
- Above-room-temperature continuous-wave mid-infrared photoluminescence from PbSe/PbSrSe quantum wells
- Experimental determination of deformation potentials and band nonparabolicity parameters for PbSe
- Eu:CaF2 layers on p-Si,,100... grown using molecular beam epitaxy as materials for Si-based optoelectronics
- Molecular beam epitaxial growth of Bi2Se3-and Tl2Se-doped PbSe and PbEuSe on CaF2 /Si,,111...
- Optical properties of ternary and quaternary IVVI semiconductor layers on (100) BaF2 substrates
- COMMUNICATIONS Midinfrared photoluminescence from IVVI semiconductors
- Study of band structure in PbSePbSrSe quantum wells for midinfrared laser applications
- IVVI compound midinfrared high-reflectivity mirrors and vertical-cavity surface-emitting lasers grown by molecular-beam epitaxy
- IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 9, NO. 3, MARCH 1997 297 Finite-Element Modeling Predicts Possibility of
- Molecular beam epitaxy of InSb on Si substrates using fluoride buffer layers
