- Strained M-plane GaN for the realization of polarization-sensitive photodetectors
- Article No. sm980577 Superlattices and Microstructures, Vol. 24, No. 2, 1998
- Edge-emission electroluminescence study of as-grown vertical-cavity surface-emitting laser structures
- J. Phys.: Condens. Matter 10 (1998) 98659874. Printed in the UK PII: S0953-8984(98)93219-2 Contactless electro-reflectance study of interdiffusion in
- Polarization-dependent beam switch based on an M-plane GaN/AlN distributed Bragg reflector
- Interference effects in photoreflectance and contactless electroreflectance spectra of CdTe films grown on Si substrate
- Nondestructive electroluminescence characterization of as-grown semiconductor optoelectronic device structures using
- Nondestructive spectroscopic characterisation of visible resonant cavity light emitting diode
- 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Phys. Status Solidi B 246, No. 6, 11841187 (2009) / DOI 10.1002/pssb.200880798
- Optical polarization properties of M-plane GaN films investigated by transmittance anisotropy spectroscopy
- Semicond. Sci. Technol. 14 (1999) 239245. Printed in the UK PII: S0268-1242(99)96153-9 Spectroscopic study of GaInP
- phys. stat. sol. (a) 204, No. 2, 439446 (2007) / DOI 10.1002/pssa.200673963 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Photoreflectance line shape symmetry and quantum-well ground-state exciton energy in vertical-cavity surface-emitting laser structures
- Polarization anisotropy of sub-band gap oscillatory features in contactless electroreflectance spectrum of InxGa1 xP layers grown
- Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs,,001...
- Electroreflectance lineshapes in multilayered semiconductor structures: Influence of the linear electro-optic effect
- Optical polarization properties of interband transitions in strained group-III-nitride alloy films on GaN substrates with nonpolar orientation
- Polarized photovoltage spectroscopy study of InAs/GaAs,,001... quantum dot ensembles
- Wavelength modulation spectroscopy using novel mechanical light chopper blade designs
- Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire
- Resonances between the cavity mode and five excitonic transitions in an InxGa1xAsGaAsAlAsAlGaAs vertical-cavity surface-emitting
- Spectroscopic study of self-organized quantum dot like structures in GaInP superlattices on ,,311... GaAs
- Photoreflectance spectroscopy with white light pump beam Sandip Ghosh and B. M. Arora
- Application of a Fourier transform based filtering technique to improve signal-to-noise ratio in modulation spectroscopy experiments
- 1108 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 1, NO. 4, DECEMBER 1995 ouble AC hotoreflectanc
- Photoreflectance line shape of excitonic transitions analyzed with a redefined set of fitting parameters
- Materials Science in Semiconductor Processing 4 (2001) 489495 Recent developments in spectroscopy of quantum structures
- Electroreflectance and surface photovoltage spectroscopies of semiconductor structures using an indiumtinoxide-coated
- Polarized photoluminescence and absorption in A-plane InN films Jayeeta Bhattacharyya, Sandip Ghosh,a
- REVIEW OF SCIENTIFIC INSTRUMENTS 81, 123102 (2010) A twisted periscope arrangement for transporting elliptically polarized light
- Polarization-dependent spectroscopic study of M-plane GaN on -LiAlO2 Sandip Ghosh, P. Waltereit, O. Brandt, H. T. Grahn,a)
- Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy
- Comparative Study of the Electronic Band Structure of Strained C-plane and M-plane GaN Films
- Very narrow-band ultraviolet photodetection based on strained M-plane Sandip Ghosha
