Hwang, Sung Woo - School of Electrical Engineering, Korea University

• Electrical Transport Properties of Au-Doped DNA Molecules J. S. Hwang1
• CONSTRUCTION OF AN RF-BAND TEST FIXTURE MODEL USING 3-D
• Journal of the Korean Physical Society, Vol. 37, No. 5, November 2000, pp. 496502 Dynamical Suppression of the Decoherence in Quantum Registers
• ConferenceConference Short CourseShort Course
• Selective growth of InAs self-assembled quantum dots on nanopatterned SiO2 Si substrate
• Journal of the Korean Physical Society, Vol. 41, No. 6, December 2002, pp. 953955 Single-Electron Tunneling Through a Heavily Doped GaAs Quantum Dot
• Journal of the Korean Physical Society, Vol. 51, December 2007, pp. S298$S302 Modeling of Semiconductor Nanowire Field-Eect Transistors Considering
• IEEE ELECTRON DEVICE LETTERS, VOL. 30, NO. 6, JUNE 2009 665 Extracting Mobility Degradation and Total Series
• Optically driven qubits in artificial molecules J. H. Oh,* D. Ahn,
• Modeling of transition regions in board-level interconnects using 3-dimensional field analysis with accurate parameters
• Au DDT 127 Au DDT
• Formation and evolution of double-layer quantum dots in a silicon-on-insulator nanowire transistor
• Dense coding in entangled states Hyuk-jae Lee,1,
• Analysis of Microwave Resonances in a Wirebond Transition between Conductor-Backed Coplanar Waveguides (CBCPWs)
• NewPhenomenain MesoscopicStructures6 SurfacesandInterfacesin MesoscopicDevices4
• Journal of the Korean Physical Society, Vol. 50, No. 3, March 2007, pp. 885888 Transport Spectroscopy of a Quantum Dot in
• Transmission-Type Radio-Frequency Single-Electron Transistor with In-Plane-Gate Single-Electron Transistor
• Physica E 13 (2002) 946949 www.elsevier.com/locate/physe
• Physica E 32 (2006) 532535 Gate bias controlled NDR in an in-plane-gate quantum dot transistor
• Direct electronic transport through an ensemble of InAs self-assembled quantum dots
• Three-dimensional analysis of electromagnetic interaction between mobile communication handset and antenna
• Fabrication and characterization of metal-semiconductor field-effect-transistor-type quantum devices
• Enhancement of Barrier Properties Using Ultrathin Hybrid Passivation Layer for Organic Light Emitting Diodes
• Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots
• Observation of gate bias dependent interface coupling in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors
• Improvement of field emission from printed carbon nanotubes by a critical H. J. Lee,a
• T H U -H 2 C o n t r i b u t ed H i g h f r eq u e n c y r est-o --se o f a si n g l e w a l l c a r b o n n a n o n , b c H e l d ef f ect t r a n sist o r
• IEEE ELECTRON DEVICE LETTERS, VOL. 19, NO. 4, APRIL 1998 137 Channel Length Independent Subthreshold
• Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs
• Journal of the Korean Physical Society, Vol. 35, December 1999, pp. S987S990 Nano-structure Patterning and Manipulation Using
• Organic electrolyte based pulsed nano-plating and fabrication of carbon nanotube network transistors
• ConferenceConference Short CourseShort Course
• IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008 683 Electrical Characteristics of the Backgated
• Journal of the Korean Physical Society, Vol. 47, November 2005, pp. S526S529 Magneto-Transport in a Silicon-on-Insulator Nanowire Transistor
• Microwave Characterization of a Field Effect Transistor with Dielectrophoretically-Aligned Single Silicon Nanowire
• *Corresponding author: Tel.: #82-2-3290-3241; fax: #82-2-921-0544.
• Microelectronic Engineering 63 (2002) 161165 www.elsevier.com/locate/mee
• Generation of Local Magnetic Field by Nano Electro-Magnets H. K. Kim1,2
• IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, VOL. 26, NO. 2, JUNE 2003 483 Characterization and Modeling of a New Via
• Efficient schemes for reducing imperfect collective decoherences WonYoung Hwang,* Hyukjae Lee, Doyeol David Ahn,
• Electrical characteristics of nickel silicidesilicon heterojunction in suspended silicon nanowires
• Journal of the Korean Physical Society, Vol. 55, No. 3, September 2009, pp. 11621166 A Bottom-gate Depletion-mode Nanowire Field Effect Transistor (NWFET)
• Electrical Transport Properties of Au-Doped Deoxyribonucleic Acid Molecules Jong Seung HWANG, Su Heon HONG1
• Gate bias controlled NDR in an in-plane-gate quantum dot transistor S. H. Son, Y. S. Choi, K. H. Cho, S. W. Hwang
• Physica E 40 (2008) 21602162 Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling
• Delivered by Ingenta to: Serial Room, Seoul National Univi
• Journal of the Korean Physical Society, Vol. 54, No. 4, April 2009, pp. 1612$1618 Amperometric Glucose Biosensor Based on a Pt-Dispersed
• Eur. Phys. J. D 19, 129132 (2002) DOI: 10.1140/epjd/e20020065 THE EUROPEAN
• IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 4, APRIL 2002 627 Silicon Single-Electron Transistors With Sidewall
• Chip Design Contest 2008.2.21() ()
• Session: (Ab-P) Semiconductor Physics (Poster Session) Type: Poster
• Detection and volume estimation of semiconductor quantum dots from atomic force microscope images
• Fabrication of single electron transistors with molecular tunnel barriers using ac dielectrophoresis technique
• Current and noise expressions for radio-frequency single-electron transistors Jung Hyun Oh,1,
• 900 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 47, NO. 4, APRIL 2000 Correspondence________________________________________________________________________
• Green-function approach to transport through a gate-surrounded Si nanowire with impurity scattering
• Delivered by Ingenta to: Korea Institute for Special Education
• Probing the continuous radio frequency spectrum of water relaxation using a carbon nanotube This article has been downloaded from IOPscience. Please scroll down to see the full text article.
• 3176 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 11, NOVEMBER 2010 Analytical Threshold Voltage Model Including
• 754 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 9, NO. 6, NOVEMBER 2010 Temperature Dependent Study of Random Telegraph
• Single crystalline aluminum nanowires with ideal resistivity J.W. Lee,a,b
• IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 8, NO. 5, SEPTEMBER 2009 643 A SPICE-Compatible New Silicon Nanowire
• IOP PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol. 24 (2009) 085018 (7pp) doi:10.1088/0268-1242/24/8/085018
• IOP PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol. 24 (2009) 025020 (6pp) doi:10.1088/0268-1242/24/2/025020
• IEEE TRANSACTIONS ON MAGNETICS, VOL. 44, NO. 8, AUGUST 2008 2085 A Magnetostatic Model for Square Spiral Inductors Incorporating
• 544 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 5, SEPTEMBER 2008 Fabrication and Characterization of Sidewall Defined
• IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 18, NO. 5, MAY 2008 323 Effect of Printed Circuit Board Structures on
• Physica E 40 (2008) 15261529 Impurity scattering effects on transport through
• IOP PUBLISHING NANOTECHNOLOGY Nanotechnology 19 (2008) 105305 (5pp) doi:10.1088/0957-4484/19/10/105305
• IOP PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol. 23 (2008) 035025 (6pp) doi:10.1088/0268-1242/23/3/035025
• Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor
• Enhanced surface morphologies of screen-printed carbon nanotube films by heat treatment and their field-emission properties
• DC Transport Characteristics of Lambda DNA Molecules and Effect of RF Signals Jong Seung HWANG, Hee Tae KIM1
• Journal of the Korean Physical Society, Vol. 47, November 2005, pp. S517S521 Single-Electron Transport in GaAs/AlGaAs Nano-In-Plane-Gate Transistors
• Journal of the Korean Physical Society, Vol. 47, November 2005, pp. S543S546 Simulation and Analysis of Radio-Frequency
• Magnetic capture of a single magnetic nanoparticle using nanoelectromagnets
• IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 15, NO. 10, OCTOBER 2005 661 A Wide Dynamic Range Analog Predistortion-Type
• Transport experiments on InAs self-assembled quantum dots in the microwave regime M. S. Jun,1,2 D. Y. Jeong,2 S. H. Lee,1 K. Heo,1 J. E. Oh,3 S. W. Hwang,1,2,
• Dynamical responses of quantum dots by pulsed fields Jung Hyun Oh,1
• Sensors and Actuators B 108 (2005) 9931000 Miniaturized fluorescence detection system to remove background
• Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor
• Formation of Electrical Interconnects by Self-Trapping of Deoxyribonucleic Acid Molecules Jong Seung HWANG, Sung Woo HWANG1;
• Available online at www.sciencedirect.com Physica E 21 (2004) 460463
• Journal of the Korean Physical Society, Vol. 44, No. 1, January 2004, pp. 117120 SPICE-Compatible Floating-Dot Single-Electron Memory Model with a New
• Superlattices and Microstructures 34 (2003) 245251 www.elsevier.com/locate/superlattices
• Time-dependent currents of a single-electron transistor in dissipative environments Jung Hyun Oh,* D. Ahn, and S. W. Hwang
• Available online at www.sciencedirect.com Physica E 19 (2003) 3943
• Lorentz-covariant reduced-density-operator theory for relativistic-quantum-information processing
• Magnetotransport measurements through stacked InAs self-assembled quantum dots
• Journal of the Korean Physical Society, Vol. 42, No. 1, January 2003, pp. 167169 Brief Reports Relativity of Entanglement
• Electrical transport through 60 base pairs of poly,,dG...-poly,,dC... DNA molecules
• Microelectronic Engineering 63 (2002) 129133 www.elsevier.com/locate/mee
• Jpn. J. Appl. Phys. Vol. 41 (2002) pp. 43754377 Part 1, No. 6B, June 2002
• Quantum gambling using two nonorthogonal states Won Young Hwang,* Doyeol Ahn,
• Three-dimensional simulation of discrete oxide charge eects in 0.1 lm MOSFETs
• Journal of the Korean Physical Society, Vol. 39, No. 1, July 2001, pp. 157159 Nano Mold Lithography for 40-nm Patterns
• Journal of the Korean Physical Society, Vol. 38, No. 3, March 2001, pp. 251254 Selective Positioning of InAs Quantum Dots on a GaAs Substrate
• Correlated errors in quantum-error corrections Won Young Hwang,* Doyeol David Ahn,
• IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, VOL. 23, NO. 1, MARCH 2000 183 Full Software Analysis and Impedance Matching of
• Journal of the Korean Physical Society, Vol. 35, December 1999, pp. S991S994 Simulation of Single-Electron/CMOS Hybrid Circuits Using
• IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 46, NO. 8, AUGUST 1999 1667 Macromodeling of Single-Electron
• SPICE Macro-Modeling for the Compact Simulation of Single Electron Circuits Y. S. Yu, H. S. Lee, and S. W. Hwang*
• Displacement current correction for the dc and transient simulation of single electron transistors
• Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor
• Space-charge-limited injection in n -i-n structures fabricated by a focused ion beam
• Optical response of a silicon nanowire FET conjugated with zinc octaethylporphyrin molecules
• TS1: Nanoelectronics (More Moore, More than Moore and Beyond-CMOS)
• Woo-Min Jin (Sogang University), Ji-Hwan Kang (Sogang University), Jun Hyuk Moon (Sogang University)
• Poster Sessions 184 ICPS 2010
• Poster Sessions July 25 ~ 30, 2010 165
• Poster Sessions July 25 ~ 30, 2010 165
• 11. Multi-Gigabit/s binary link Digital clock and Data Recovery CPPSIM CFP-299 12. Wide-Tracking Range Clock and Data Recovery Circuit CPPSIM CFP-300
• Extended Abstracts of the 2009 International Conference on
• Workshop Technical Digest Sponsored by
• Abstract--Electrical characteristic of bottom-up synthesized silicon nanowire FETs is studied for possible pH sensing device
• High Frequency Pulse Response of an In-plane-gate Quantum Dot Transistor H. T. Kim1,2
• We report a new fabrication technique of solid state devices on plastic substrates using poly-Si nanowires. Poly-Si nanowires with
• Numerical Simulation and Thermal Failure Analysis of SOM Package Jae Choon Kima
• 9 MEMS , [2007 4 5-7 ] Korean MEMS Conference, Jeju, April 5-7, 2007
• Low temperature electrical transport through phenylene-ethynylene conjugated molecular junction formed
• Resonant Tunneling through Quantum States of Enhancement Mode In-Plane-Gate Quantum Dot Transistors
• 2006 29 1 A physics-based equivalent circuit model for LTCC Helical
• Single electron transport in GaAs/AlGaAs nano-in-plane-gate transistors
• Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor
• Fabrication of single electron transistors with molecular tunnel barriers using AC dielectrophoresis technique
• SIMPLE PCB BASED S-PARAMETER EXTRACTION METHOD FOR RF AMPLIFIER CIRCUITS
• 160 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 17, NO. 3, MARCH 2007 Characterization and Wideband Modeling of
• Faraday's Induction in Nano-Transformer , J. S. Hwang2
• IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, VOL. 24, NO. 2, JUNE 2001 279 Software-Based Analysis of Radio Frequency Plasma
• Time-convolutionless reduced-density-operator theory of a noisy quantum channel: Two-bit quantum gate for quantum-information processing
• Fabrication and characterization of modulation-doped-field-effect-transistors with antidot-patterned passivation layers
• Physica E 7 (2000) 430434 www.elsevier.nl/locate/physe
• Radio Frequency Pulse Response of an In-plane-gate Field Effect Transistor H. T. Kim1,2
• Microwave design and characterization of a cryogenic dip probe for time-domain measurements of nanodevices
• Observation of three-dimensional shell filling in cylindrical silicon nanowire single electron transistors
• C1: Output Load Capacitance(in CMOS case) C2: Bypass Capacitor
• The 12th Korean Conference on Semiconductors Magneto-transport in a silicon-on-insulator nano-wire transistor
• Single-electron transistor based on a silicon-on-insulator quantum wire fabricated by a side-wall patterning method
• Workshop Technical Digest Sponsored by
• Talanta 80 (2010) 16481652 Contents lists available at ScienceDirect
• IEEE ELECTRON DEVICE LETTERS, VOL. 28, NO. 12, DECEMBER 2007 1129 Temperature-Dependent Characteristics of
• Superlattices and Microstructures 34 (2003) 433438 www.elsevier.com/locate/superlattices
• IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 8, NO. 6, NOVEMBER 2009 713 Possibility of Transport Through a Single Acceptor in
• Journal of the Korean Physical Society, Vol. 39, December 2001, pp. S27S29 Single Electron Memory with Silicon Self-Assembled Quantum-Dots
• SURFACE AND INTERFACE ANALYSIS Surf. Interface Anal. 2007; 39: 6468
• Journal of the Korean Physical Society, Vol. 41, No. 4, October 2002, pp. 505508 Single-Electron Transistors with Sidewall Depletion Gates
• Relativistic entanglement and Bell's inequality Doyeol Ahn,1,2,
• Transient modelling of single-electron transistors for efficient circuit simulation by SPICE
• EP2DS-18/MSS-14 Important dates
• Journal of the Korean Physical Society, Vol. 35, December 1999, pp. S893S896 An Efficient Off-chip Impedance Matching Technique of
• any memory, and it was shown that the use of Maehly method can speed up the calculations as much as AWE.
• Journal of the Korean Physical Society, Vol. 39, No. 3, September 2001, pp. 433435 Patterned Formation of InAs QDs for Single-Electron Device Applications
• Journal of the Korean Physical Society, Vol. 41, No. 6, December 2002, pp. 861864 Characterization and Modeling of a Micro-Strip Bandpass Filter
• 29 January 2001 Physics Letters A 279 (2001) 133138
• Generation of Local Magnetic Field by Nano Electro-Magnets Hyung Kwon KIM1;2
• ISDRS 2007, December 12-14, 2007, College Park, MD, USA ISDRS 2007 http://www.ece.umd.edu/ISDRS
• Journal of the Korean Physical Society, Vol. 50, No. 6, June 2007, pp. 18691872 Calculation of the Tunneling Current and the Noise for a Radio-Frequency
• ORIGINAL PAPER Pt-polyaniline nanocomposite on boron-doped diamond
• Self-consistent non-Markovian theory of a quantum-state evolution for quantum-information processing
• IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 9, NO. 1, JANUARY 2010 123 Fabrication and Characterization of an
• Estimation of electronic confinement in a quantum dot from envelope modulation of Coulomb blockade oscillations
• An automated glitch-detectionrestoration method of atomic force microscope images
• 2007 2 8 ( )-9 ( ) / Layer Deposition
• 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Transconductance
• Effect of Interface Charge on the Sub-threshold Characteristics of Gate-All-Around Silicon Nanowire Field-Effect-Transistors
• Organic Electrolyte Based Pulsed Nanoplating and Fabrication of Carbon Nanotube Network Transistors
• Electrochemical Characterization of Modified Gold Electrode based on Nano Porous Silicon for Amperometric Urea Biosensor
• Enhanced photo-conductivity of silicon nanowires conjugated with 3-aminopropyltriethoxysilane (APTES)-adsorbed Zn(OEP) molecules
• 2520 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO. 8, AUGUST 2011 Implicit Continuous CurrentVoltage Model for
• Single-string carbon nanotube field effect transistors fabricated by two-step dielectrophoresis
• RESEARCHARTICLE Copyright 2011 American Scientific Publishers
• Electrochemical growth of vertically aligned ZnO nanorod arrays on oxidized bi-layer graphene electrode
• IEEE ELECTRON DEVICE LETTERS, VOL. 32, NO. 9, SEPTEMBER 2011 1179 Subthreshold Degradation of Gate-all-Around
• DOI:10.5573/JSTS.2011.11.2.080 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.11, NO.2, JUNE, 2011 Co-existence of Random Telegraph Noise and Single-
• European Microwave Week 2010 Conference Proceedings. ISBN 978-2-87487-015-6. Copyright EuMA 2010. Materials contained in the European Microwave Week 2010 Conference Proceedings are copyrighted and are protected by worldwide copyright laws and treaty prov
• Analytical Characteristics of Electrochemical Biosensor Using Pt-Dispersed Graphene on Boron Doped Diamond Electrode
• Abstract--We present the direct measurement of the gate capacitance of a silicon nanowire field effect transistor using
• Published: October 17, 2011 r 2011 American Chemical Society 23552 dx.doi.org/10.1021/jp206639b |J. Phys. Chem. C 2011, 115, 2355223557
• Aluminum Nanotransmission Lines with No Grain Boundaries and No Surface Roughness Myunggil Kang1;2
• Six Days Three Conferences One Exhibition European Microwave Week 2011
• Delivered by Ingenta to: Korea Institute for Special Education
• Chiral Selectivity of Pyridyl-Substituted Porphyrin Ring for Monitoring Neurotransmitters in the Presence of Interfering Agents
• Experimental Investigations on Ballistic Transport in Multi-Bridged Channel Field Effect Transistors
• Graphene arch gate SiO2 shell silicon nanowire core field effect transistors
• . 2 . . ' 1 / # '