- 2390 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 52, NO. 10, OCTOBER 2004 SiGe Heterojunction Bipolar Transistors and Circuits
- IEEE MICROWAVE AND GUIDED WAVE LETTERS, VOL. 8, NO. 2, FEBRUARY 1998 63 Single-and Dual-Feedback Transimpedance
- 1106 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 37, NO. 9, SEPTEMBER 2002 40-Gb/s Circuits Built From a 120-GHz
- Abstract-Thermal resistance has been measured for high speed SiGe HBT's with various emitter widths and lengths. The
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 52, NO. 6, JUNE 2005 1219 LED structure, the built-in electric field Fbuilt-in is still the same di-
- 258 IEEE ELECTRON DEVICE LETTERS, VOL. 23, NO. 5, MAY 2002 Self-Aligned SiGe NPN Transistors With
- (INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication Applications
- The revolution in SiGe: impact on device electronics D.L. Haramea,*
- IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 38, NO. 9, SEPTEMBER 2003 1471 Product Applications and Technology Directions
- D. C. Ahlgren D. D. Coolbaugh
- Pushing the Performance Limits of SiGe HBTTechnology Marwan Khatera
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 9, SEPTEMBER 2006 2407 SiGe HBT Without Selectively Implanted Collector (SIC)
- 324 IEEE ELECTRON DEVICE LETTERS, VOL. 24, NO. 5, MAY 2003 3.9 ps SiGe HBT ECL Ring Oscillator and Transistor
- Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGe HBTs
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 11, NO. 10, OCTOBER 2001 401 Reliability of Microwave SiGe/Si Heterojunction
- 1. Introduction Great progress has recently been achieved in SiGe HBT
- Abstract In this study DC and RF characteristics of Si nFETs and SiGe HBTs are compared in IBM's leading-edge production
- Short Communication A doping concentration-dependent upper limit of
- Introductory Invited Paper Reliability and performance scaling of
- Proceedings of Asia-Pacific Microwave Conference 2006 Copyright 2006 IEICE
- This work reports on SiGe HBT technology with fmax and fT of 350 GHz and 300 GHz, respectively, and a gate delay
- Materials Science in Semiconductor Processing 8 (2005) 295299 Evaluating and designing the optimal 2D collector profile for a
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 47, NO. 4, APRIL 2000 883 Temperature Dependent Minority Electron Mobilities
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 19, NO. 4, APRIL 2009 215 The Island-Gate Varactor--A High-Q MOS
- 520 IEEE ELECTRON DEVICE LETTERS, VOL. 28, NO. 6, JUNE 2007 Manufacturable Parasitic-Aware Circuit-Level FETs
- Effect of collector lateral scaling on performance of high-speed SiGe HBTs
- IEEE ELECTRON DEVICE LETTERS, VOL. 27, NO. 7, JULY 2006 567 Half-Terahertz Operation of SiGe HBTs
- 2744 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 52, NO. 12, DECEMBER 2005 Structure Optimization of Trench-Isolated SiGe
- 772 IEEE TRANSACTIONS ON ADVANCED PACKAGING, VOL. 28, NO. 4, NOVEMBER 2005 RF Characterization and Modeling of
- Scaling of SiGe Heterojunction Bipolar Transistors
- 3736 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 51, NO. 6, DECEMBER 2004 Proton Tolerance of Fourth-Generation 350 GHz
- Design and optimization of a 200 GHz SiGe HBT collector profile by TCAD
- IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 3, NO. 2, JUNE 2003 31 Reliability of High-Speed SiGe Heterojunction
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3, MARCH 2003 645 Transistor Design and Application Considerations for
- 542 IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 11, NOVEMBER 2001 A 210-GHz fT SiGe HBT With a
- ELSEVIER Journal of Crystal Growth 175/176 (1997) 499.-503 Characterization of mismatched SiGe grown on
- A V-Band Waveguide Transition Design Appropriate for Monolithic Integration
- Advances in SiGe HBT BiCMOS Technology A. Joseph, L. Lanzerotti, X. Liu, D. Sheridan, J. Johnson, Q. Liu, J. Dunn, J.-S. Rieh*, and D. Harame
- Scaling Towards 300 GHz fT/fMAX SiGe Transistors Basanth Jagannathan, Jae-Sung Rieh, and Greg Freeman, Semiconductor Research and Development
- Avalanche Considerations in SiGe HBT Scaling Greg Freeman, Basanth Jagannathan, Jae-Sung Rieh
- Long-Term Reliability of Si/Si0.7Ge0.3/Si HBTs from Accelerated Lifetime Testing
- The electrical and material properties of strained SiGe alloys have been overviewed and the historical sur-
- SMALL-AND LARGE-SIGNAL OPERATIONOF X-BAND CE AND CB SiGe/Si POWER HBT'S
- Modern Trend of High-Speed SiGe Heterojunction Bipolar Transistors (HBTs) (Invited Paper)
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 46, NO. 5, MAY 1998 685 X-and Ku-Band Amplifiers Based on Si/SiGe HBT's
- INTRODUCTION This paper deals specifically with performance,
- aperture of the feed instead of behind the lens. The efficiency of the FZPA with hex-cut zones, described in this work, can also be
- ABSTRACT -The effect of the structural variation of device on its thermal resistance was investigated for trench-isolated
- Evaluating and Designing the Optimal 2D Collector Profile for a 300 GHz SiGe HBT
- ABSTRACT: A process tolerance analysis of a SiGe NPN HBT with > 200GHz fT and > 250GHz fMAX is
