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- Ultrafast Spectroscopy of InGaN Quantum Wells for the Development of Efficient Emitters
- Lasing modes in equilateral-triangular laser cavities H. C. Chang, G. Kioseoglou, E. H. Lee, J. Haetty, M. H. Na, Y. Xuan, H. Luo,* and A. Petrou
- Femtosecond pump and probe spectroscopy of optical nonlinearities in an InGaN/GaN heterostructure
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- Optimizing Light Emission from Nitride Quantum Wells Paul M. Sweeney, C. M. Harder, M. C. Cheung, A. N. Cartwright
- Journal of Crystal Growth 288 (2006) 218224 InN: A material with photovoltaic promise and challenges
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- Room-Temperature TimeResolved Photoluminescence Studies of UV Emission from GaN/AlN Quantum Wells
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- Si doping of high-Al-mole fraction AlxGa1xN alloys with rf plasma-induced molecular-beam-epitaxy
- Nonlinear optical response, screening, and distribution of strain in piezoelectric multiple quantum wells
- Emission Mechanisms in UV Emitting GaN/AlN Multiple Quantum Well Structures Madalina Furis, Alexander N. Cartwright, Hong Wu1
- Influence of growth temperature on emission efficiency of InGaN/GaN multiple quantum wells
- Thermomechanical behavior of micron scale solder joints under dynamic loads
- Optical microfabrication of highly reflective volume Bragg gratings Vincent K. S. Hsiao, Tzu-Chau Lin, Guang S. He, Alexander N. Cartwright,a
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- SESSION 2632 Context Based Educational Java Applets Using Consumer
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- High contrast switching of distributed-feedback lasing in dye-doped H-PDLC transmission
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- Hole transport and carrier lifetime in InN epilayers Fei Chen and A. N. Cartwright
- Proceedings of the 2001 American Society for Engineering Education Annual Conference & Exposition Copyright 2001, American Society for Engineering Education
- MRS Internet J. Nitride Semicond. Res. 4, 12 (1999). 1 1999 The Materials Research Society
- Differential read-out architecture for CMOS ISFET microsystems
- Spectroscopy Studies of InP Nanocrystals Synthesized Through a Fast Reaction Madalina Furis, David J. MacRae1
- Quasi-reversible photoluminescence quenching of stable dispersions of silicon nanoparticles
- Per-carrier nonlinear optical response of [111]-oriented piezoelectric InGaAs/GaAs multiple quantum wells
- Reliabilityof solderjoints under electricalstressing -Strain evolutionof solderjoints
- THERMOMECHANICAL BEHAVIOR OF BGA SOLDER JOINTS UNDER VIBRATIONS: AN EXPERIMENTAL OBSERVATION
- INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol. 21 (2006) 717723 doi:10.1088/0268-1242/21/6/001
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- BioMed Central Page 1 of 7
- Spectral and temporal resolution of recombination from multiple excitation states in modulation-doped AlGaN/GaN multiple quantum
- Journal of Crystal Growth 279 (2005) 311315 Growth of InN on Ge substrate by molecular beam epitaxy
- Enhanced ambipolar in-plane transport in an InAs/GaAs hetero-n-i-p-i D. S. McCallum, A. N. Cartwright, X. R. Huang, Thomas F. Boggess, and Arthur L Smirl
- Effects of Solubilized Water on the Relaxation Dynamics Surrounding 6-Propionyl-2-(N,N-dimethylamino)naphthalene
- IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS--I: REGULAR PAPERS, VOL. 54, NO. 1, JANUARY 2007 111 CMOS-Based Phase Fluorometric
- Experimental verification of the applicability of the homogenization approximation to rough one-dimensional photonic crystals
- Organic Solvent Vapor Detection Using Holographic Photopolymer Reflection
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- Dynamics of multiple trapping by a single-beam laser tweezer
- Journal of Crystal Growth 269 (2004) 1014 Ultrafast carrier dynamics in InN epilayers
- IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES , VOL. 27, NO. 1, MARCH 2004 217 Application of Moir Interferometry to
- Out-of-well carrier screening in a strained InxGa1xNGaN multiple quantum well structure Fei Chen and A. N. Cartwright
- Surfactant-Imposed Interference in the Optical Characterization of GaP Nanocrystals Madalina Furis, Yudhisthira Sahoo, David J. MacRae, Felicia S. Manciu,
- Ultrafast differential transmission spectroscopy of excitonic transitions in InGaNGaN multiple quantum wells
- Excitonic field screening and bleaching in InGaN/GaN multiple quantum wells
- IEEE TRANSACTIONS ON ADVANCED PACKAGING, VOL. 25, NO. 3, AUGUST 2002 433 Impact of Temperature Cycle Profile on Fatigue Life
- IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 9, NO. 10, OCTOBER 1997 1385 Novel MetalSemiconductorMetal Photodetectors
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- Time Resolved Photoluminescence of Si-doped High Al Mole Fraction AlGaN Epilayers Grown by Plasma-Enhanced Molecular Beam Epitaxy
- Time Resolved Optical Studies of InGaN Layers Grown on LGO Maurice Cheung, Gon Namkoong1
- Molecular Beam Epitaxial Growth of AlN/GaN Multiple Quantum Wells Hong Wu, William J. Schaff, and Goutam Koley
- "Proceedings of the 2002 American Society for Engineering Education Annual Conference & Exposition Copyright 2002, American Society for Engineering Education"
- Moir Interferometry for Microelectronics Packaging Interface Fatigue Reliability , A.N. Cartwright1
- Session 2353 Introducing Students to Engineering Using a Case Study Approach
- Session 2632 Design and Collaborative-learning in Lasers and Photonics Courses
- Session 1364 Cooperative Learning Environments for Engineering Courses.
- I N R A S I I C ~ V I ~ C i F ' M K ~ ~ ~ J O J N L S u M ) l w ~ v I B R A ' I I c N A N D ~ c Y ~
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- Electroluminescence Properties of Systematically Derivatized Organic Chromophores Containing Electron
- In-well screening nonlinearities in piezoelectric multiple quantum wells X. R. Huang, D. R. Harken, A. N. Cartwright, and Arthur L. Smirl