- Optical and Photocurrent Spectroscopy Studies of Inter-and Intra-Band Transitions
- Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1xAs strain-relieving quantum wells
- Intraband and interband photocurrent spectroscopy and induced dipole moments of InAsGaAs,,001... quantum dots in nin
- Europhys. Lett., 59 (4), pp. 552558 (2002) EUROPHYSICS LETTERS 15 August 2002
- Photoemission study of the Na/ZnSe,,100... interface Zhonghui Chen* and D. Eich
- InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief Zhengmao Ye and Joe C. Campbella)
- Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layer
- Voltage-controllable multiwavelength InAs quantum-dot infrared photodetectors for mid-and far-infrared detection
- Intraband-transition-induced dipoles in self-assembled InAsGaAs,,001... quantum dots
- Normal-incidence voltage-tunable middle-and long-wavelength infrared photoresponse in self-assembled InAs quantum dots
- Normal incidence InAsAlxGa1xAs quantum dot infrared photodetectors with undoped active region
- VOLUME 79, NUMBER 6 P H Y S I C A L R E V I E W L E T T E R S 11 AUGUST 1997 Magnetospectroscopy of Bound Phonons in High Purity GaAs
- The 58th Device Research Conference, Denver, Colorado, June 19/21,2000 DARK CURRENT REDUCTION AND OPERATIONAL WAVELENGTH SHIFT IN
- Conference Digest of Joint 29th International conference on Infrared and Millimeter Waves and 12th
- 1234 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 38, NO. 9, SEPTEMBER 2002 Normal-Incidence InAs Self-Assembled
- Noise and photoconductive gain in InAs quantum-dot infrared photodetectors
- The 15th Annual Meeting of the IEEE Lasers & Electro-Optics Society (LEOS), LEOS2002, Glasgow, Scotland, Nov. 10-14, 2002.
- InAs/AlxGa1xAs quantum dot infrared photodetectors with undoped active region
