- Optoelectronic Properties of Self-Assembled InAs/InGaAs Quantum SANJAY KRISHNA
- Modeling of electrical characteristics of midwave type II InAs/GaSb strain layer superlattice diodes
- Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors
- N-type ohmic contact on type-II InAs/GaSb strained layer superlattices
- Mid-IR focal plane array based on type-II InAs/GaSb strain layer superlattice detector with nBn design
- Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure
- Mid Infrared Focal Plane Arrays With Nanoscale Quantum Dots and Superlattices
- Low strain Quantum Dots in a Double Well Infrared Detectors R. V. Shenoia, J. Houa,b, Y. Sharmaa, J. Shaoa, T. E Vanderveldea, and S. Krishnaa
- IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 19, NO. 22, NOVEMBER 15, 2007 1843 Midwavelength Infrared Avalanche Photodiode
- 230 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 43, NO. 3, MARCH 2007 640 512 Pixels Long-Wavelength Infrared (LWIR)
- Type II Strain Layer Superlattices (SLS's) grown on GaAs Y.D. Sharma, G.Bishop, H.S. Kim, J.B. Rodriguez, E. Plis, G. Balakrishnan, L.R. Dawson, D.L. Huffaker
- Plasmon Assisted Photonic Crystal Quantum Dot Sensors R. V. Shenoia, D. A. Ramireza, Y. Sharmaa, R. S. Attaluria, J. Rosenbergb, O. J. Painterb,
- Demonstration of a Two Color 320 x 256 Quantum Dots-in-a-Well Focal Plane Array
- IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 12, NO. 6, NOVEMBER/DECEMBER 2006 1269 InAs/GaSb Superlattice Detectors Operating
- Influence of Si doping on the performance of quantum dots-in-well photodetectors
- Mathematical and Computer Modelling 43 (2006) 582591 www.elsevier.com/locate/mcm
- INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS D: APPLIED PHYSICS J. Phys. D: Appl. Phys. 38 (2005) 21422150 doi:10.1088/0022-3727/38/13/010
- Activation energies for Te and Be in metamorphically grown AlSb and InxAl1-xSb layers
- Optical loss and lasing characteristics of high-quality-factor AlGaAs microdisk resonators with embedded quantum dots
- Terahertz absorption in AlGaAs films and detection using heterojunctions
- Mid-infrared Imaging Characterization and Application (MICA) Laboratory
- SANJAY KRISHNA EDUCATION DOCTOR OF PHILOSOPHY (APPLIED PHYSICS ) University of Michigan, 2001
- Prof. Krishna To Receive MBE Award Prof. Krishna To Receive MBE Award
- IR detectors state of the art Mentor: Dr. J.-B. Rodriguez
- Sanjay Krishna Receives the 2008 SPIE Early Career Achievement Award
- Photoconductors Rajeev V Shenoi
- Effects of Si doping on normal incidence InAs/In0.15Ga0.85As dots-in-well quantum dot infrared photodetectors
- Assessment of quantum dot infrared photodetectors for high temperature P. Martyniuk,1
- Bias dependent dual band response from InAs/Ga,,In...Sb type II strain layer superlattice detectors
- Photoluminescence measurements of quantum-dot-containing semiconductor microdisk resonators using optical fiber taper waveguides
- Single bump, two-color quantum dot camera E. Varley, M. Lenz, S. J. Lee,a
- Focal Plane Arrays (FPAs) Operation principles
- 1150 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 14, NO. 4, JULY/AUGUST 2008 Quantum Dots-in-a-Well Focal Plane Arrays
- nBn Based Infrared Detectors Using Type-II InAs/(In,Ga)Sb Superlattices
- 1090 IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 10, OCTOBER 2008 Dopant Migration-Induced Interface Dipole Effect
- n-Type GaAs/AlGaAs heterostructure detector with a 3.2 THz threshold frequency
- Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity
- Spin split-off transition based IR detectors operating at high temperatures
- nBn structure based on InAs/GaSb type-II strained layer superlattices J. B. Rodriguez, E. Plis, G. Bishop, Y. D. Sharma, H. Kim, L. R. Dawson, and S. Krishnaa
- Characterization of carriers in GaSb/InAs superlattice grown on conductive GaSb substrate
- Second Harmonic Generation from a Nanopatterned Isotropic Nonlinear
- Ultralow noise midwave infrared InAsGaSb strain layer superlattice avalanche photodiode
- Single quantum dot spectroscopy using a fiber taper waveguide near-field optic
- Low-strain InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetector
- Type II InAs/GaSb strain layer superlattice detectors with p-on-n polarity E. Plis, J. B. Rodriguez, H. S. Kim, G. Bishop, Y. D. Sharma,
- Demonstration of 640 512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging
- High Operating Temperature InAs Quantum Dot Infrared Photodetector via Selective Capping Techniques
- Midwave infrared type-II InAs/GaSb superlattice detectors with mixed interfaces
- Suppressed Surface Leakage Current Using nBn Infrared Detector Based on Type II InAs/GaSb Strain Layer
- Nanoscale quantum dot infrared sensors with photonic crystal cavity K. T. Posani, V. Tripathi, S. Annamalai, N. R. Weisse-Bernstein, and S. Krishnaa
- Reduction in dark current using resonant tunneling barriers in quantum dots-in-a-well long wavelength infrared photodetector
- INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS D: APPLIED PHYSICS J. Phys. D: Appl. Phys. 39 (2006) 49975001 doi:10.1088/0022-3727/39/23/015
- Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice
- Infrared Quantum Dot Intersubband
- Transient photoconductivity measurements of carrier lifetimes in an InAs/In0.15Ga0.85As dots-in-a-well detector
- Demonstration of a 320256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors
- State-of-the-art IR detectors Mentor: Dr. J.-B. Rodriguez
- 512 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 56, NO. 3, MARCH 2009 Comparison of Long-Wave Infrared
- 10.1117/2.1200803.1043 A large-scale quantum dot IR focal plane array
- Precision radiometry using a tunable InAs/InGaAs quantum dot in a well infrared focal plane array
- This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. Quantum Dot Based Infrared
- Quantum Dot Infrared Photodetector Focal Plane Arrays
- Epitaxial growth of 20 nm InAs and GaAs quantum dots on GaAs through block copolymer templated SiO2 masks
- Radiometry and Blackbody Emission
- Electrochemical sulphur passivation of InAs=GaSb strain layer superlattice
- Resonant cavity enhanced InAs/In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetector
- State-of-the-art IR detectors Mentor: Dr. J.-B. Rodriguez
- Multicolor Quantum Dots-in-a-Well Focal Plane Arrays Thomas E. Vandervelde, Michael C.Lenz, Eric Varley, Ajit Barve, Jiayi Shao, Rajeev Shenoi, David
- nBn detectors based on InAs/GaSb type-II strain layer superlattice G. Bishop, E. Plis,a
- Extraction of radiative and nonradiative rates in Sb based midwave infrared lasers using a novel approach
- phys. stat. sol. (c) 3, No. 3, 439443 (2006) / DOI 10.1002/pssc.200564162 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
