- Cubic AlGaN/GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-off
- Near-infrared intersubband absorption in nonpolar cubic GaN/AlN superlattices
- Optoelektronische Halbleiter Gruppe III Nitride Donat J. As
- phys. stat. sol. (c) 1, No. S2, S202S209 (2004) / DOI 10.1002/pssc.200405141 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Optoelektronische Halbleiter Gruppe III Nitride Donat J. As
- Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN J. R. L. Fernandez, F. Cerdeira, E. A. Meneses, and M. J. S. P. Brasil
- Physik in unserer Zeit / 31. Jahrg. 2000 / Nr. 1 WILEY-VCH Verlag GmbH, 69469 Weinheim, 1999 0031-9252/00/0101-0014 $ 17.50 + .50/0
- phys. stat. sol. (c) 0, No. 7, 25372540 (2003) / DOI 10.1002/pssc.200303547 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- apl.Prof. Dr. D.J. As 1LED optische Eigenschaften
- 3. Mefehler 3.1 Messungenauigkeit -Fehlerfortpflanzungsgesetz
- Cubic AlGaN/GaN Hetero-field effect transitors with normally on and normally off , E. Tschumak1
- Molecular Beam Epitaxy of Cubic Group III-Nitrides on free-standing 3C-SiC substrates
- Recent developments on non-polar cubic group III-nitrides for optoelectronic applications
- |Physik in unserer Zeit |32. Jahrgang 2001
- apl.Prof. Dr. D.J. As 1Typische UHV-Anlage
- apl.Prof. Dr. D.J. As 104 LED Basis elektronische Eigenschaften
- BESSY -Annual Report Berliner Elektronenspeicherring-Gesellschaft fr Synchrotronstrahlung m.b.H.
- apl.Prof. Dr. D.J. As 1Aufdampfen und Molekularstrahlepitaxie
- Carbon doping of non-polar cubic GaN by CBr4 D.J. As a,, E. Tschumak a
- B1. Einzel-Photonen Quellen auf der Basis von Gruppe III-Nitriden (D. J. As, K. Lischka, A. Zrenner, T. Meier)
- INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 13 (2001) 89238929 PII: S0953-8984(01)24501-9
- |Physik in unserer Zeit |33. Jahrgang 2002
- apl.Prof. Dr. D.J. As 1Grundlagen der Teilchenoptik und Spektroskopie
- bungen zur Vorlesung Experimentalphysik fr Elektrotechniker
- Europium doping of zincblende GaN by ion implantation K. Lorenz,1,2,a
- PHYSICAL REVIEW B 83, 195301 (2011) Band offsets in cubic GaN/AlN superlattices
- apl.Prof. Dr. D.J. As 114 Thermodynamik (Wrmelehre)
- Large room temperature Rabi-splitting in IIVI semiconductor microcavity quantum structures
- pss-Header will be provided by the publisher applications and materials science
- Magnetic characterization of conductance electrons in GaN
- Universality of electron accumulation at wurtzite c-and a-plane and zinc-blende InN surfaces
- Thin Solid Films 455456 (2004) 684687 0040-6090/04/$ -see front matter 2004 Elsevier B.V. All rights reserved.
- Doping of MBE grown cubic GaN on 3C-SiC (001) by CBr4 ,E. Tschumak1
- In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction
- Physik in unserer Zeit / 31. Jahrg. 2000 / Nr. 1 WILEY-VCH Verlag GmbH, 69469 Weinheim, 1999 0031-9252/00/0101-0034 $ 17.50 + .50/0
- von Ana Mara Repolls Rabinad Motivation und Geschichte
- Physik und Technologie optoelektronischer Halbleiter Universitt Paderborn, Department Physik
- phys. stat. sol. (c) 3, No. 6, 16041607 (2006) / DOI 10.1002/pssc.200565140 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Band offset between cubic GaN and AlN from intra-and interband spectroscopy of superlattices
- apl.Prof. Dr. D.J. As 1Strukturen im Realen und Reziproken Raum
- MBE growth of atomically smooth non-polar cubic AlN T. Schupp n
- bungen zur Vorlesung Experimentalphysik fr Elektrotechniker
- Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates D.J. As a,*, S. Potthast a
- Defect and Diffusion Forum, Vol. 206-207 (2002) 87-102 N and p-type doping of cubic GaN
- 2003 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim DOI:10.1002/piuz.200301019 Nr. 6 |34. Jahrgang. 2003
- bungen zur Vorlesung ,,Bauelemente der Optoelektronik" E. Tschumak, Tel: 5830
- 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics
- 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim phys. stat. sol. (b) 245, No. 1, 170173 (2008) / DOI 10.1002/pssb.200743372
- Cubic group-III nitride-based nanostructures--basics and applications in optoelectronics
- 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics
- bungen zur Vorlesung Experimentalphysik fr Elektrotechniker
- apl.Prof. Dr. D.J. As 111 weie LED
- MBE growth of cubic AlN on 3C-SiC substrate
- Physik in unserer Zeit / 31. Jahrg. 2000 / Nr. 1 WILEY-VCH Verlag GmbH, 69469 Weinheim, 1999 0031-9252/00/0101-0008 $ 17.50 + .50/0
- PHYSICAL REVIEW B 83, 075313 (2011) Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared
- Carbon as an acceptor in cubic GaN/3CSiC A. Zado a,n
- Bauen mit einzelnen Atomen Gerhard Meyer und Karl-Heinz Rieder
- Lasing of donor-bound excitons in ZnSe microdisks A. Pawlis,1,2,* M. Panfilova,1 D. J. As,1 K. Lischka,1 K. Sanaka,2 T. D. Ladd,2 and Y. Yamamoto2
- Hauptseminar WS 2009/10 Apl.Prof. Dr. D.J. As
- O P T I S C H E DAT E N B E R T R AG U N G | INFORMATIONSTECHNIK
- apl.Prof. Dr. D.J. As 1Optoelektronische Halbleiter-Bauelemente (Teil 2)
- bungen zur Vorlesung Experimentalphysik fr Elektrotechniker
- apl.Prof. Dr. D.J. As 108 LED-Leistungsmerkmale
- Der Quantum-Hall-Effekt und das Ohm HS WS 2007/08
- Near band-edge optical properties of cubic GaN with and without carbon doping
- apl.Prof. Dr. D.J. As 109 LED-Farbempfindlichkeit des Auges
- |Physik in unserer Zeit |32. Jahrgang 2001
- |Physik in unserer Zeit |32. Jahrgang 2001
- Strong room temperature 510 nm emission from cubic InGaN/GaN multiple quantum , K. Lischka1
- 4 Kinematik der Translation 4.1 Koordinatensysteme
- MBE Growth of Cubic InN Jrg Schrmann, Donat Josef As, and Klaus Lischka
- Josephson Effekt Flussquanten
- Molekulare Elektronik -Herstellung und Analyse von
- 2007 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim 1617-9437/07/0909-33 Physik Journal 6 (2007) Nr. 8/9 33 PREISTRGER
- Zinc-blende GaN quantum dots grown by vaporliquidsolid condensation T. Schupp a,n
- apl.Prof. Dr. D.J. As 1Auger Elektronenspektroskopie (AES) Photoemissionspektroskopie (XPS, UPS)
- apl.Prof. Dr. D.J. As 1Transmission durch einen Fabry-Perot Resonator
- Was macht Prof. L und Prof. A ? Physik und Technologie optoelektronischer Halbleiter
- apl.Prof. Dr. D.J. As 107 LED-fortschrittliche Strukturen und Packaging
- bungen zur Vorlesung ,,Bauelemente der Optoelektronik" E. Tschumak, Tel: 5830
- bungen zur Vorlesung Experimentalphysik fr Elektrotechniker
- Dielectric function and critical points of the band structure for hexagonal and cubic GaN and AlN
- bungen zur Vorlesung Experimentalphysik fr Elektrotechniker
- 1Optische Messmethoden 1. Absorption
- Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities
- apl.Prof. Dr. D.J. As 1SIMS (Sekundr-Ionen-Massenspektroskopie)
- Ni Schottky diodes on cubic GaN S. Potthast, J. Fernandez, J. Schrmann, and K. Lischka
- Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3CSiC ,,001...
- 1Elektrische Messmethoden Hall-effekt
- Long room-temperature electron spin lifetimes in bulk cubic J. H. Bu,a J. Rudolph,a T. Schupp,b D. J. As,b K. Lischka,b and D. Hagelea
- 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics
- Growth of cubic GaN on nano-patterned 3C-SiC/Si (0 0 1) substrates R.M. Kemper n
- 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics
- Growth of cubic GaN quantum dots , T. Meischb
- Long room-temperature electron spin lifetimes in highly doped cubic GaN J. H. Bu,1
- Author's personal copy Droplet epitaxy of zinc-blende GaN quantum dots
- 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics
- 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics
- 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics
- 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics
- Schottky and ohmic contacts on non-polar cubic GaN epilayers , E. Tschumak1
- Comparative Study of 3C-GaN Grown on Semi-insulating 3C-SiC/Si(100) Elena Tschumak1,a
- Insulating substrates for cubic GaN-based HFETs E. Tschumak , M.P.F. de Godoy, D.J. As, K. Lischka
- Low-threshold ZnSe microdisk laser based on fluorine impurity bound-exciton transitions
- Cubic GaN/AlN multiple quantum well photodetector E. A. DeCuir, Jr.,1
- Near infrared intersubband absorption in cubic GaN/AlN superlattices Eric A. DeCuir, Jr. 1
- Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations
- physica status solidi, 6 September 2007 Band gap and effective electron
- Magnetic and structural properties of Gd-implanted zinc-blende GaN A. Melnikov, D. Reuter, and A. D. Wieck
- Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells
- p s scurrent topics in solid state physics www.pss-c.com
- INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol. 21 (2006) 846851 doi:10.1088/0268-1242/21/7/003
- Mechanism of current leakage in Ni Schottky diodes on cubic GaN and AlxGa1-xN , S. Potthast1
- Journal of Crystal Growth 284 (2005) 379387 Growth and characterization of cubic InxGa1xN epilayers on
- Room temperature ferromagnetism in cubic GaN epilayers implanted V. A. Chitta,a)
- Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess
- Optical Properties of Carbon Doped Cubic GaN Epilayers Grown on GaAs (001) Substrate by Molecular Beam Epitaxy
- Optical Properties of MBE Grown Cubic AlGaN Epilayers and AlGaN/GaN Quantum Well , M. Bartels*, A. Khartchenko*, D. Schikora*
- Pressure and temperature effects on optical transitions in cubic GaN Z. X. Liu, A. R. Gon~i,a)
- HIGH-PRESSURE RAMAN SCATTERING OF BIAXIALLY STRAINED GaN ON GaAs
- Optoelectronic Semiconductors Die AG As (Optoelektronische Halbleiter -Gruppe III-Nitride)
- A6 ,,Orientation-patterned" Galliumnitrid-Wellenleiter auf periodisch gepoltem Lithium-niobat (PPLN) (K. Lischka, W. Sohler)
- apl.Prof. Dr. D.J. As 1Einfhrung
- apl.Prof. Dr. D.J. As 1Quadrupolmassenspektroskopie (QMS)
- apl.Prof. Dr. D.J. As 1Oberflchenstrukturen
- apl.Prof. Dr. D.J. As 1Das Rastertunnelmikroskop
- bungen zur Vorlesung ,,Experimentelle Messmethoden der Festkrper-und Oberflchenphysik"
- apl.Prof. Dr. D.J. As 1Einleitung
- apl.Prof. Dr. D.J. As 1Optische Absorption, Verluste und Verstrkung
- apl.Prof. Dr. D.J. As 1I. Licht emittiernde Dioden (LED)
- apl.Prof. Dr. D.J. As 1Farbanpassungsfunktionen
- apl.Prof. Dr. D.J. As 1Optik II (Beugungsphnomene)
- apl.Prof. Dr. D.J. As 115 Atom und Kernphysik
- bungen zur Vorlesung Experimentalphysik fr Elektrotechniker
- bungen zur Vorlesung Experimentalphysik fr Elektrotechniker
- bungen zur Vorlesung Experimentalphysik fr Elektrotechniker
- apl.Prof. Dr. D.J. As Hauptseminar WS 2007/08
- |33. Jahrgang 2002 |Physik in unserer Zeit
- phys. stat. sol. (c) 3, No. 6, 20912094 (2006) / DOI 10.1002/pssc.200565113 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Dies alles ist nicht neu. Interessant ist nun die Frage,ob es berhaupt sein kann,dass die optische Brechzahl n auch
- 6 Dynamik der Translation 26.1 Die Newton`sche Axiome
- apl.Prof. Dr. D.J. As 1Rasterelektronenmikroskop
- Contactless electroreflectance study of Fermi-level pinning at the surface of cubic GaN
- Physica B 308310 (2001) 126129 Properties of carbon as an acceptor in cubic GaN
- 10 Schwingungen 10.1 Ungedmpfte harmonische Schwingungen
- |Phys. Unserer Zeit |34. Jahrgang 2003
- Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells
- IOP PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol. 23 (2008) 055001 (6pp) doi:10.1088/0268-1242/23/5/055001
- p-Type Doping of Cubic GaN by Carbon ), U. Kohler, M. Lubbers, J. Mimkes, and K. Lischka
- UNIVERSITY of PADERBORNUNIVERSITY of PADERBORN Faculty of Science, Department of Physics,
- Large room temperature Rabi-splitting in a ZnSe/(Zn,Cd)Se semiconductor microcavity structure
- bungen zur Vorlesung Experimentalphysik fr Elektrotechniker
- Molecular beam epitaxy of phase pure cubic InN J. Schrmann,a
- Die AG As (Optoelektronische Halbleiter -Gruppe III-Nitride) bieten ab Januar 2006 eine Arbeit zur Erlangung des Akad.Grades eines
- Optical constants of cubic GaN in the energy range of 1.53.7 eV U. Kohler, D. J. As, B. Schottker, T. Frey, and K. Lischka
- Semicond. Sci. Technol. 14 (1999) 161167. Printed in the UK PII: S0268-1242(99)96129-1 Cathodoluminescence of
- ECR-Etching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Lars Hiller1,a
- bungen zur Vorlesung Experimentalphysik fr Elektrotechniker
- Vertical design of cubic GaN-based high electron mobility transistors R. Granzner,1,a)
- bungen zur Vorlesung Experimentalphysik fr Elektrotechniker
- bungen zur Vorlesung Experimentalphysik fr Elektrotechniker
- bungen zur Vorlesung Experimentalphysik fr Elektrotechniker
- bungen zur Vorlesung Experimentalphysik fr Elektrotechniker
- Optoelektronische Halbleiter Gruppe III Nitride Donat J. As
- bungen zur Vorlesung Experimentalphysik fr Elektrotechniker
- apl.Prof. Dr. D.J. As 1Optoelektronische Halbleiter-Bauelemente
- 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics
- Currentvoltage characteristics of cubic Al(Ga)N/GaN double barrier structures on 3CSiC
- 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics
- Low interface trapped charge density in MBE in situ grown Si cubic GaN MIS structures
- Anti-phase domains in cubic GaN Ricarda Maria Kemper,1,a)
- Epitaxial growth and optical transitions of cubic GaN films D. Schikora, M. Hankeln, D. J. As, and K. Lischka
