Chen, Zhi - Department of Electrical and Computer Engineering, University of Kentucky

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Chen, Zhi - Department of Electrical and Computer Engineering, University of Kentucky

Ethylene ame synthesis of well-aligned multi-walled carbon nanotubes
Fundamental connection between hydrogendeuterium desorption at silicon surfaces in ultrahigh vacuum and at oxidesilicon interfaces
www.aspbs.com/enn Encyclopedia of
Dramatic reduction of gate leakage current of ultrathin oxides through oxide structure modification q
Fabrication of nanoelectrodes based on controlled placement of carbon nanotubes using alternating-current electric field
Evidence for energy coupling from the SiD vibration mode to the SiSi and SiO vibration modes at the SiO2 Si interface
Direct evidence of multiple vibrational excitation for the SiAHD bond breaking in metaloxidesemiconductor transistors
RESEARCHARTICLE JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
RAPID COMMUNICATIONS The purpose of this Rapid Communications section is to provide accelerated publication of important new results in the
Microelectronic Engineering 56 (2001) 353358 www.elsevier.com/locate/mee
Role of holes in the isotope effect and mechanisms for the metaloxidesemiconductor device degradation
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 4, APRIL 2001 813 using zero VD in extracting asymptotic VT is minimal. A final note is
24 IEEE ELECTRON DEVICE LETTERS, VOL. 21, NO. 1, JANUARY 2000 On the Mechanism for Interface Trap Generation
This article was originally published in a journal published by Elsevier, and the attached copy is provided by Elsevier for the
Reduction of gate leakage current of HfSiON dielectrics through enhanced phonon-energy coupling
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PROOF COPY [JES-05-1034R] 070512JES [JES-05-1034R]070512JES
Growth of well-aligned carbon nanotube arrays on silicon substrates using porous alumina film as a nanotemplate
Phonon-energy-coupling enhancement: Strengthening the chemical bonds of the SiO2/Si system
Physical and electrical properties of a Si3N4 SiGaAs metalinsulatorsemiconductor structure