- The Effect of Debris on Collector Optics, its Mitigation and Repair: Next-Step a Gaseous Sn EUV DPP Source
- Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3
- Growth of single-crystal CrN on MgO,,001...: Effects of low-energy ion-irradiation on surface morphological evolution and physical properties
- Phosphorus incorporation during Si,,001...:P gas-source molecular beam epitaxy: Effects on growth kinetics and surface morphology
- Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics
- Characterization of collector optic material samples before and after exposure in laser
- Direct measurements of strain depth profiles in GeSi,,001... nanostructures D. W. Moon and H. I. Lee
- Smooth relaxed Si0.75Ge0.25 layers on Si,,001... via in situ rapid thermal Y. L. Foo,b)
- Growth of Si1 xGex,,011... on Si,,011...16 2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface
- UIUC Collector Erosion and Optical Lifetime Project Results: Time Dependent Exposures
- ELSEVIER Journal of Crystal Growth 179 (1997)97 107 j........ CR11TAL
- Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1xGex Si,,001... growth
- Effects of B doping on hydrogen desorption from Si(001) during gas-source molecular-beam epitaxy from Si2H6 and B2H6
- Local strain relaxation in Si0.7Ge0.3 on Si,,001... induced by Ga irradiation Chinkyo Kima)
- Ultrahigh B doping ,,1022 ... during Si,,001... gas-source molecular-beam epitaxy
- Surface Science Letters Si(1 1 3) hydrogen desorption kinetics: a
- Sn-mediated Ge/Ge,,001... growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thickness
- INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS D: APPLIED PHYSICS J. Phys. D: Appl. Phys. 38 (2005) A7A10 doi:10.1088/0022-3727/38/10A/002
- Characterization of collector optic material samples before and after exposure in LPP and DPP EUV sources
- Evidence of Transition-Metal Accumulation on Aged Graphite Anodes by SIMS
- Real-time control of AlN incorporation in epitaxial Hf1 xAlxN using high-flux, low-energy (1040 eV) ion bombardment
- Mechanism for epitaxial breakdown during low-temperature Ge,,001... molecular beam epitaxy K. A. Bratland, Y. L. Foo, J. A. N. T. Soares, T. Spila, P. Desjardins,* and J. E. Greene
- Growth of epitaxial Cu on MgO(001) by magnetron sputter deposition J.M. Purswani a
- Hybrid surface roughening modes during low-temperature heteroepitaxy: Growth of fully-strained metastable Ge1 xSnx alloys on Ge,,001...2 1
