del Alamo, Jesús A. - Microsystems Technology Laboratories & Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT)

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• Sub-40nm V-groove MOSFETs J. Appenzeller'., R. Martel', Ph. Avouris", J. Knoch+, Y. Lut, K.L. Wangt, J. Scholvint, J.A. del Alamot, P. Rice**
• 5:OOpm -5:15pm Temperature Dependence of Breakdown Voltage in InAlAsDnGaAs HEMTs
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• 646 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 36. NO. 4, APRIL 1989 A Recessed-Gate In,.52A10.48As/n+-1%.53G%.47A~
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• 1574 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 42, NO. 9, SEPTEMBER 1995 Impact Ionization and Transport
• Formation of Structural Defects in AlGaN/GaN High Electron Mobility Transistors under Electrical Stress
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• SHARING ONLINE LABORATORIES AND THEIR COMPONENTS A new learning experience
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• Validity of the Quasi-Transparent Model of the Current Injectedinto Heavily Doped Emitters
• Planar View of Structural Degradation in GaN HEMT
• A Monolithic Tunable High-Q InAlAs/n+-InP-HFET Resonator Peter R. Nuytkens, David R. Greenberg. Jes& A. del Alamo,and EdmundJ. Balboni t
• 436 IEEE ELECTRON DEVICE LETTERS, VOL. 12, NO. 8, AUGUST 1991 A Pseudomorphic AlGaAs/n+-InGaAs
• IEEE ELECTRON DEVICE LETTERS, VOL. 26, NO. 1, JANUARY 2005 29 RF Power Performance of an LDMOSFET on
• III-V CMOS: What have we learned from HEMTs? Jess A. del Alamo1
• 998 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 45, NO. 5, MAY 2010 Effect of Substrate Contact Shape and Placement
• 1878 IEEE TRANSAC"IOh1S ON ELECTRON DEVICES, VOL. ED-31,NO. 12, DECEMBER 1984 The Physics and IModeling of Heavily
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• RF Power Potential of 90 nm CMOS: Device Options, Performance, and Reliability
• Role of stress voltage on structural degradation of GaN high-electron-mobility transistors
• Hole mobility enhancement in In0.41Ga0.59Sb quantum-well field-effect transistors
• Creating a New "Stereotype" Meredith College Aims to Change the Statistics
• Physics of breakdown in InAlAs/InGaAs MODFETs Sandeep R. Bahl', Jesds A. del Alamo', Jiirgen Dick"* and Steffen Schildberg2
• 1D to 1D Tunneling in a Dual Electron Waveguide Device C. C. Euaster, J. A. del Alamo,M. R. Mellocht, M. J. Rooks*
• AN INVESTIGATIONOF DEEP LEVELS IN InAIAs/n+-InGaAsHETEROSTRUCTURE FET's
• The MIT Microelectronics WebLab: a Web-Enabled Remote Laboratory for Microelectronic Device Characterization
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• IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 56, NO. 12, DECEMBER 2009 2895 Measurement of Channel Temperature in GaN
• Injection Velocity in Thin-Channel InAs HEMTs Tae-Woo Kim and Jess A. del Alamo
• A New Dynamic Model for the Kink Effect in InAlAs/InGaAs HEMTs Mark H. Somerville, Alexander Ernst, and Jes6s A. del Alamo
• 304 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 4, NO. 4, NOVEMBER 1991 A Process Control Methodology Applied to
• Experience and Plans Prof L.O. Kehinde
• Electrical Reliability of RF Power GaAs PHEMTs A. A. Villanueva1
• JesJesss del Alamo and Steven R.del Alamo and Steven R. LermanLerman LINC SymposiumLINC Symposium
• IEEE TRANSACTIONS ON ELECTRON DEVICES VOL. 42, NO. 1, JANUARY 1995 15 Off-State Breakdown in InAlAsDnGaAs MODFET's
• IEEE ELECTRON DEVICE LETTERS, VOL. EDL-I, NO. 11, NOVEMBER 1986 629 Forward-Bias Tunneling: A Limitation to Bipolar
• Logic Characteristics of 40 nm thin-channel InAs HEMTs Tae-Woo Kim, Dae-Hyun Kim* and Jess A. del Alamo
• 10 nm CMOS:10 nm CMOS: The Prospects for III-Vs
• MISTI MIT International Science and Technology Initiatives
• IEEE ELECTRON DEVICE LETTERS, VOL. 12, NO. 12. DECEMBER 1991 An InAlAs/InAs MODFET
• Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors
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• An Equivalent Circuit Model for a Faraday Cage Substrate Crosstalk Isolation Structure
• JesJesss del Alamo and Steven R.del Alamo and Steven R. LermanLerman LINC WorkshopLINC Workshop
• Exploring Innovation in Education and Research iCEER-2005 Tainan, Taiwan, 1-5 March 2005
• Impact of S110< uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors
• IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 46, NO. 6, JUNE 1999 1087 On-State Breakdown in Power
• Journal of Crystal Growth 278 (2005) 596599 Growth of InP high electron mobility transistor
• *Corresp. author: lingxia@mit.edu, Phone: +1-617-258-5752, Fax: +1-617-258-7393 Mobility Enhancement of Two-dimensional Hole Gas in an In0.24Ga0.76As Quantum
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• RF Power Potential of 45 nm CMOS Technology Usha Gogineni
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• IEEETRANSACTIONSONELECTRONDEVICES,VOL.ED-31,NO. 1, JANUARY 1984 123 collectingdiode," IEEE Trans. Electron Devices, vol. ED-30, p.
• Effect of Trapping on the Critical Voltage for Degradation in GaN High Electron Mobility Transistors
• 60 nm Self-Aligned-Gate InGaAs HEMTs with Record High-Frequency Characteristics
• 2268 IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 41, NO. 12, DECEMBER 1994 Physics of Breakdown in InAlAs/n+-InGaAs
• for RF Power Applications J. A. del Alamo
• 1910 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 40, NO. 11, NOVEMBER 1993 A Novel Analog-to-Digital Conversion Architecture
• IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 39. NO. I I . NOVEMBER 1992 saturate just above the unstrained Si saturation velocity 1
• Quantum Capacitance in Scaled Down III-V FETs Donghyun Jin, Daehyun Kim, Taewoo Kim and Jess A. del Alamo
• 1334 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 41, NO. a, AUGUST 1994 Velocity Saturation in the Extrinsic
• Impact of Gate Placement on RF Degradation in GaN High Electron Mobility Transistors
• The High Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects
• InGaAs HEMT with InAs-rich InAlAs barrier spacer for reduced source resistance
• http://chronicle.com/weekly/v51/i34/34a03703.htm From the issue dated April 29, 2005
• The impact of substratesurfacepotential on the performance of RF power LDMOSFETson high-resistivitySO1
• Non-Uniform Degradation Behavior Across Device Width in
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• IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 52, NO. 3, MARCH 2005 305 Hydrogen Sensitivity of InP HEMTs With
• Thermal, electrical and environmental reliability of InP HEMTs and GaAs PHEMTs
• Ronneby, May 10-12, 2004Netlearning 2004 Sharing online remote laboratory
• JessJess del Alamo and Steven R.del Alamo and Steven R. LermanLerman LINC SymposiumLINC Symposium
• Degradation mechanism of PHEMT under large signal operation Takayuki Hisaka, Yoich Nogami, HajimeSasaki, Atsushi Hasuike,NaohitoYoshida,
• International Conference on Engineering Education July 2125, 2003, Valencia, Spain. An Online Microelectronics Device Characterization Laboratory with a Circuit-like
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• Electrical Degradation of InAlAs/InGaAs Metamorphic
• A High Aspect-Ratio Silicon Substrate-ViaTechnology and Applications: Through-Wafer Interconnects for Power and Ground and Faraday Cages for SOC Isolation
• 424 IEEE ELECTRON DEVICE LETTERS, VOL. 21, NO. 9, SEPTEMBER 2000 Titanium Hydride Formation in Ti/Pt/Au-Gated InP
• 1560 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 47, NO. 8, AUGUST 2000 Physical Mechanisms Limiting the Manufacturing
• Breakdown in Millimeter-Wave Power I[nP HEMTs: a Comparison with PHEMTs J. A. del Alamo (andM. H. Somerville
• On-Sitate Breakdown in Power HEMTs: Measurements and Modeling Mark H. Somervillet, Roxann Blanchardt, Jesh A. del Alamot, George DuhS, and P. C. ChaoS
• IEEE ELECTRON DEVICE LETTERS, VOL. 18, NO. 12, DECEMBER 1997 613 Dynamics of the Kink Effect
• A Model for Tunneling-Limited Breakdown in High-Power HEMTs Mark H. Somerville and Jes6s A. del Alamo
• I304 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 43, NO. 8, AUGUST 1996 Nonlinear Source and Drain Resistance in
• IEEE ELECTRONDEVICE LETTERS, VOL. 17, NO. 10, OCTOBER 1996 473 Direct Correlation Between Impact
• Off-State Breakdown in Power pHEMTs: the Impact of the Source M.H. Somerville", J.A. del Alamo", and Paul Saunieri.
• A New Physical Model for the Kink Effect on InAlAs/InGaAs HEMTs Mark H. Somervillet, Jes6s A. del Alamot, and William Hoke$
• Electroluminescence and gate current components of InAlAs/InGaAs HEET'S G. Berthold, A. Neviani, E. Zanoni, Dipartimento di Elettronica e Informatica, Univ. of
• IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 40, NO. 11, NOVEMBER 1993 2135 wire width of 3500 A.Clear conductance steps were ob-
• A SubmicronInAlAs/n+-InPHFET with Reduced ImpactIonization
• 22 IEEE ELECTRONDEVICE LETTERS, VOL. 14,NO. 1,JANUARY 1993 Doubly Strained I n o ~ ~ ~ ~ o ~ 5 ~ A ~ / n + -I n o ~ ~ 5
• IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 39, NO. 9. SEPTEMBER 1992 2037 Mesa-Sidewall Gate Leakage in InAlAs/InGaAs
• 123IEEE ELECTRON DEVICE LETTERS, VOL. 13, NO. 2 , FEBRUARY 1992 Breakdown Voltage Enhancement
• Criteria for One-Dimensional Transport in Split-Gate Field-Effect Transistors Cristopher C. Eugster, JesGs A. del Alamo, Paul A. Belk and Michael J. Rooks'
• A Process Control Methodology Applied to Sub-micron Gate Lithography
• IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 26, NO. I , JANUARY 1990 Carrier-Induced Change in Refractive
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• MAJORITY AND MINORITY CARRIER TRANSPORT I N POLYSILICON EMITTER CONTACTS
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• Thermal stability of strained iin,Ga, ~,As/ln,Al, -,,As/lnP heterostruetures Brian R. Bennetta) and Jestis A. dei Alamo
• 50-nm E-mode In0.7Ga0.3As PHEMTs on 100-mm InP substrate with fmax > 1 THz Dae-Hyun Kim, *Jess A. del Alamo, Peter Chen, Wonill Ha, Miguel Urteaga and Berinder Brar
• RF Power Degradation of GaN High Electron Mobility Transistors Jungwoo Joh and Jess A. del Alamo
• 1504 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 7, JULY 2010 Scalability of Sub-100 nm InAs HEMTs on InP
• Abstract ThedevicephysicsandtechnologyissuesforIII-Vtransistorsareexam-inedfromasimulationperspective.Toexaminedevicephysics,anInGaAsHEMT
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• 30 nm In0.7Ga0.3As Inverted-Type HEMTs with Reduced Gate Leakage Current for Logic Applications
• Fig. 1: (a) TEM image of InAs HEMT fabricated in Ref. [4]. The device region enclosed in the dotted white rectangle is included in the simulation domain. (b) Schematic view of the InAs HEMT. The channel region is composed of a 10 nm InGaAs/InAs/InGaAs Mul
• Modeling Frequency Response of 65 nm CMOS RF Power Devices Usha Gogineni1
• MIT iLabs:MIT iLabs: Carnegie Initiation MeetingCarnegie Initiation Meeting
• iLAB@MAKBrief -Brief History Visit to MUK by Prof. J. del Alamo to
• IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 45, NO. 9, SEPTEMBER 1998 1883 Off-State Breakdown in Power
• Analytical Model for RF Power Performance of Deeply Scaled CMOS Devices
• EDUCATIONAL EXPERIMENTS WITH AN ONLINE MICROELECTRONICS CHARACTERIZATION LABORATORY
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• Dynamics of the Kink Effect in InAlAs/InGaAs HEMTs Tup22 A. N. Ernst, M. H. Somerville, and J. A. del Alamo
• IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO. 8, AUGUST 2011 2597 Experimental Study of 110 Uniaxial Stress Effects
• IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO. 7, JULY 2011 1963 Multiscale Metrology and Optimization of