- Interstitial aggregates and a new model for the I1/W optical centre in silicon
- The Ab Initio Cluster Method and the Dynamics of Defects in Semiconductors
- FORMATION AND DIFFUSIVITY OF SMALL OXYGEN AGGREGATES IN SI AND GE
- THE TRI-INTERSTITIAL DEFECT IN SI N. Pinho, B. J. Coomer, J. P. Goss, R. Jones
- SelfInterstitial Clusters in Silicon B. J. Coomer, J. P. Goss, A. Resende and R. Jones
- The divacancy in silicon and diamond B. J. Coomer a , A. Resende a , J. P. Goss a , R. Jones a , S.
- INTERACTION OF HYDROGEN WITH SECONDARY RADIATION B. Hourahine and R. Jones
- THEORY OF INTERSTITIAL AGGREGATES IN GERMANIUM S. Birner, J. P. Goss and R. Jones
- I4 IN SILICON: CORRELATION WITH EXPERIMENT B. J. Coomer, J. P. Goss, and R. Jones
- Simulations of DeepLevel Defects in Semiconductors
- Identification of the tetra-interstitial in silicon B. J. Coomer, J. P. Goss, and R. Jones
- Hydrogen molecules in silicon located at interstitial sites and trapped in voids
- Interstitial aggregates and a new model for the I 1 /W optical centre in silicon
- INTERACTION OF HYDROGEN WITH SECONDARY RADIATION B. Hourahine and R. Jones
- Deep acceptors trapped at threading edge dislocations in GaN J. Elsner 1;2 , R. Jones 1 , M. Haugk 2 , Th. Frauenheim 2 , M.I. Heggie 3 , S.
- SELF-INTERSTITIAL CLUSTERS IN SILICON B. J. Coomer, J. P. Goss, A. Resende and R. Jones
- Structure and electronic properties of nitrogen defects in , J. P. Goss2
- The Ab Initio Cluster Method and the Dynamics of Defects in Semiconductors
- Do we really understand dislocations in semiconductors? School of Physics, University of Exeter, Exeter, EX4 4QL, UK
- Do we really understand dislocations in semiconductors? School of Physics, University of Exeter, Exeter, EX4 4QL, UK
- FORMATION AND DIFFUSIVITY OF SMALL OXYGEN AGGREGATES IN SI AND GE
- THE TRIINTERSTITIAL DEFECT IN SI N. Pinho, B. J. Coomer, J. P. Goss, R. Jones
- Optically active hydrogen dimers in silicon B. Hourahine + and R. Jones
- STABLE HYDROGEN PAIR TRAPPED AT CARBON IMPURITIES IN SILICON B. Hourahine, 1, # R. Jones, 1 S.
- THEORY OF INTERSTITIAL AGGREGATES IN GERMANIUM S. Birner, J. P. Goss and R. Jones
- STABLE HYDROGEN PAIR TRAPPED AT CARBON IMPURITIES IN SILICON B. Hourahine,1,
- Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si
- Identification of the Hexavacancy in Silicon with the B4 80 Optical Center
- Optically active hydrogen dimers in silicon B. Hourahine
- The divacancy in silicon and diamond B. J. Coomera
- THEORETICAL INVESTIGATION OF ELECTRICALLY ACTIVE DEFECTS IN SILICON
- Molecular hydrogen traps within silicon B. Hourahine a,1
- Vacancy-Hydrogen Complexes in Germanium B. J. Coomer , P. Leary , M. Budde , B. Bech Nielsen ,
- The Interaction of Hydrogen with Deep Level Defects in R. Jones, B. J. Coomer, J. P. Goss, B. Hourahine, and A. Resende
- Selfinterstitial aggregation in diamond J. P. Goss, B. J. Coomer, and R. Jones
- Self interstitialhydrogen complexes in silicon B. Hourahine and R. Jones
- Simulations of Deep-Level Defects in Semiconductors
- I 4 IN SILICON: CORRELATION WITH EXPERIMENT B. J. Coomer, J. P. Goss, and R. Jones
- Self--interstitial aggregation in diamond J. P. Goss, B. J. Coomer, and R. Jones
- The Interaction of Hydrogen with Deep Level Defects in R. Jones, B. J. Coomer, J. P. Goss, B. Hourahine, and A. Resende
- Effect of oxygen on the growth of (10 10) GaN surfaces: the formation of nanopipes
