
- Capacitance hysteresis in GaN/AlGaN heterostructures L. E. Byrum,1
- 974 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 41, NO. 7, JULY 2005 A Resonant Tunneling Quantum-Dot
- Negative capacitance of GaAs homojunction far-infrared detectors A. G. U. Perera,a)
- Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature
- Quantum dot nanostructures for multi-band infrared detection A.G.U. Perera a,*,1
- Design of terahertz quantum well photodetectors H.C. Liu a,*, H. Luo a
- Far-infrared free-hole absorption in epitaxial silicon films for homojunction A. G. U. Perera,a)
- 35 lm cuto bound-to-quasibound and bound-to-continuum InGaAs QWIPs
- This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research
- GaAs/AlGaAs quantum well photodetectors with a cutoff wavelength A. G. U. Perera,a)
- INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol. 20 (2005) L40L42 doi:10.1088/0268-1242/20/8/L04
- Effect of interface states on the performance of GaAs p -i far-infrared
- Theory of transient spectroscopy of multiple quantum well structures M. Ershova)
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 52, NO. 3, MARCH 2005 413 Effect of Doped Substrate on GaAsAlGaAs
- GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges
- Uncooled infrared detectors for 35 m and beyond P. V. V. Jayaweera,1
- Spin split-off transition based IR detectors operating at high temperatures
- High operating temperature split-off band infrared detectors A. G. U. Perera,a
- High-Temperature Tunneling Quantum-Dot Intersublevel
- Dark current analysis of Si homojunction interfacial work function internal photoemission far-infrared detectors
- GaAs multilayer p -i homojunction far-infrared detectors A. G. U. Perera,a)
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 45, NO. 8, AUGUST 1998 1671 Effect of Emitter Layer Concentration
- Zn-doped GaSb epitaxial film absorption coefficients at terahertz frequencies and detector applications
- Optical characterizations of heavily doped p-type AlxGa1-xAs and GaAs epitaxial films at terahertz frequencies
- Free-carrier absorption in Be-and C-doped GaAs epilayers and far infrared detector applications
- Physica E 7 (2000) 130134 www.elsevier.nl/locate/physe
- Meditation as a way of life The aim of Meditation is to become your own master and not be a slave to situations
- Homo-and Heterojunction Interfacial Workfunction Internal
- Provided for non-commercial research and educational use only. Not for reproduction, distribution or commercial use.
- Dielectric function model for p-type semiconductor inter-valence band transitions
- This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research
- Heterojunction plasmonic midinfrared detectors M. S. Shishodia and A. G. Unil Pereraa)
- Five-band bias-selectable integrated quantum well detector in an n-p-n architecture
- CHIN. PHYS. LETT. Vol. 27, No. 2 (2010) 027302 Low-Cost UV-IR Dual Band Detector Using Nonporous ZnO Film Sensitized by
- 1230 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 6, JUNE 2010 Analysis of Dark Current Mechanisms for Split-Off
- IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 46, NO. 6, JUNE 2010 877 Polarization Sensitivity of Quantum Well Infrared
- Device modeling for split-off band detectors S. G. Matsik,1
- Effect of emitter thickness on the spectral shape of heterojunction interfacial workfunction internal photoemission detectors
- Self-consistent performance modeling for dualband detectors S. G. Matsik1
- This article was published in an Elsevier journal. The attached copy is furnished to the author for non-commercial research and
- Materials Science and Engineering B74 (2000) 5660 GaAs homojunction interfacial workfunction internal
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 46, NO. 4, APRIL 1999 811 IV. CONCLUSION
- Space-charge-limited conduction in Si n in homojunction far-infrared detectors
- Device model for pulsing in silicon p-i-n structures A. G. U. Perera and S. fvlatsik
- GaAs/AIGaAs superlattice miniband detector with 14.5 pm peak response K. M. S. V. Bandara,a) J.-W. Choe, and M. H. Francombe
- AlGaAs/InGaAs/AlGaAs Double Barrier
- Single and Multi Emitter Terahertz Detectors Using n-Type GaAs/AlGaAs Heterostructures
- Available online at www.sciencedirect.com Journal of Photochemistry and Photobiology A: Chemistry 195 (2008) 364367
- A multicolor quantum dot intersublevel detector with photoresponse in the terahertz range
- Why Gratzel's cell works so well P.V.V. Jayaweera, A.G.U. Perera, K. Tennakone *
- Effects of a pn junction on heterojunction far infrared detectors S.G. Matsik a,*, M.B.M. Rinzan a
- Quantum structures for multiband photon detection A.G.U. PERERA
- GaN/AlGaN ultraviolet/infrared dual-band detector G. Ariyawansa, M. B. M. Rinzan, M. Alevli, M. Strassburg, N. Dietz, and A. G. U. Pereraa
- Eur. Phys. J. B 50, 403410 (2006) DOI: 10.1140/epjb/e2006-00154-5 THE EUROPEAN
- Physica D 215 (2006) 159165 www.elsevier.com/locate/physd
- Lattice vibrations in hexagonal Ga1-xMnxN epitaxial films on c-plane sapphire substrates by infrared reflectance spectra
- Composition dependence of the infrared dielectric functions in Si-doped hexagonal AlxGa1-xN films on c-plane sapphire substrates
- Plasmon Enhancements for FIR Detection A. G. U. Perera, S. G. Matsik, P. V. V. Jayaweera
- INDEX OF CONTRIBUTORS Aers, G.C., 171
- Advanced space-based detector research at the Air Force Research Laboratory
- Autocorrelation measurements of free-electron laser radiation using a two-photon QWIP
- Non-Gaussian noise in quantum wells infrared photodetectors , Y. Paltiel a,*, A. Zussman a
- Van Hove singularities in intersubband transitions in multiquantum well photodetectors
- Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (111)A substrate
- Multi-color tunneling quantum dot infrared photodetectors operating at room temperature
- Enhanced infrared absorption of spatially ordered quantum dot arrays W.Q. Ma *, Y.W. Sun, X.J. Yang, M. Chong, D.S. Jiang, L.H. Chen
- MBE grown type-II MWIR and LWIR superlattice photodiodes Cory J. Hill *, Jian V. Li, Jason M. Mumolo, Sarath D. Gunapala
- Monolithically integrated near-infrared and mid-infrared detector array for spectral imaging
- Towards dualband megapixel QWIP focal plane arrays S.D. Gunapala a,*, S.V. Bandara a
- This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research
- Simultaneous detection of ultraviolet and infrared radiation in a single GaN/GaAlN heterojunction
- Temperature dependent responsivity of quantum dot infrared photodetectors
- Physica E 7 (2000) 115119 www.elsevier.nl/locate/physe
- Quantum structures for multiband photon detection A.G.U. PERERA
- Nonuniform vertical charge transport and relaxation in quantum well infrared detectors
- INFRARED PHYSICS & TECHNOLOGY Aims and Scope
- LWIR/SWIR switchable two color device based on InP/InGaAs integrated HBT/QWIP
- Homojunction internal photoemission far-infrared detectors: Photoresponse performance analysis
- Resonant cavity enhancement in heterojunction GaAsAlGaAs terahertz detectors
- Space charge analysis in quantum well structures leading to spontaneous pulsing
- 20 m cutoff heterojunction interfacial work function internal photoemission detectors
- Chaotic dynamics in terahertz-driven semiconductors with negative effective mass State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy,
- Light-hole and heavy-hole transitions for high-temperature long-wavelength infrared detection
- Operating temperature and the responsivity of split-off band detectors A.G.U. Perera a,*, P.V.V. Jayaweera a
- 1064 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 5, MAY 2005 Effect of Well Width on Three-Color Quantum
- Molecular beam epitaxy growth of HgCdTe for high performance infrared photon detectors
- Normal incidence detection of ultraviolet, visible, and mid-infrared radiation in a single
- The 4th International Workshop on Quantum Well Infrared Photodetectors (QWIP2006), was held in Kandy,
- Experimental observation of transient photocurrent overshoot in quantum well infrared photodetectors
- High performance single emitter homojunction interfacial work function far infrared detectors
- Wavelength agile superlattice quantum dot infrared photodetector G. Ariyawansa,1
- A quantum ring terahertz detector with resonant tunnel barriers P. Bhattacharya,1,a
- Design and optimization of GaAs/AlGaAs heterojunction infrared detectors D. G. Esaev,a)
- GaSb homojunctions for far-infrared ,,terahertz... detection P. V. V. Jayaweera, S. G. Matsik, and A. G. U. Pereraa
- Spontaneous oscillations and triggered pulsing in GaAs/InGaAs multiquantum well structures
- Dual-band pixelless upconversion imaging devices Hui Lian Hao,1
- Proceedings Title page . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii Contents . . . . . . . . . . . . . . . . . . . . . . . . .
- Terahertz detection with tunneling quantum dot intersublevel photodetector X. H. Su, J. Yang, and P. Bhattacharyaa
- This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE TRANSACTIONS ON ELECTRON DEVICES 1
- Resonant tunneling times in superlattice structures J.-W. Choe and H.-J. Hwang
- Space charge spectroscopy of integrated quantum well infrared photodetectorlight emitting diode
- Photoconductive generation mechanism and gain in internal photoemission infrared detectors
- This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research
- NIR, MWIR and LWIR quantum well infrared photodetector using interband and intersubband transitions
- Free carrier absorption in Be-doped epitaxial AlGaAs thin films M. B. M. Rinzan, D. G. Esaev, and A. G. U. Pereraa)
- High-performance quantum ring detector for the 13 terahertz range S. Bhowmick,1,a
- Effect of ion implantation on quantum well infrared photodetectors N. Hatefi-Kargan a,*, D.P. Steenson a
- GaAsInGaAs quantum well infrared photodetector with a cutoff wavelength at 35 m
- 178 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 1, JANUARY 2005 Characteristics of a Multicolor InGaAsGaAs
- Quantum mechanical effects in internal photoemission THz detectors M.B. Rinzan, S. Matsik, A.G.U. Perera *
- Band structure and impurity effects on optical properties of quantum well and quantum dot infrared photodetectors
- Dye-sensitized near-infrared room-temperature photovoltaic photon detectors
- INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS D: APPLIED PHYSICS J. Phys. D: Appl. Phys. 38 (2005) 21352141 doi:10.1088/0022-3727/38/13/009
- Demonstration of Si homojunction far-infrared detectors A. G. U. Pereraa)
- Far infrared photoelectric thresholds of extrinsic semiconductor photocathodes
- Space charge analysis in quantum well structures leading to spontaneous pulsing
- Transient photocurrent overshoot in quantum-well infrared photodetectors V. Letov, M. Ershov,a)
- Optimization of corrugated-QWIPs for large format, high quantum efficiency, and multi-color FPAs
- Mahiyangana The first place
- Low dark current far infrared detector with an optical cavity architecture
- 1/f Noise in dye-sensitized solar cells and NIR photon detectors P.V.V. Jayaweera a,b
- AlGaAs emitter/GaAs barrier terahertz detector with a 2.3 THz threshold M. B. M. Rinzan and A. G. U. Pereraa
- 2756 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 10, OCTOBER 2010 Low-Cost ZnO-Based UltravioletInfrared
- Wavelength and polarization selective multi-band tunnelling quantum dot detectors
- Near-and far-infrared p-GaAs dual-band detector G. Ariyawansa, M. B. M. Rinzan, D. G. Esaev, S. G. Matsik,
- Displacement currents in semiconductor quantum dots embedded dielectric media: A method for room temperature photon detection
- Research topics at Thales Research and Technology: Small pixels and third generation applications
- Estimates of infrared intersubband emission and its angular dependence in GaAs/AIGaAs multiquantum well structures