- Ion implanted Si:P double dot with gate tunable interdot coupling V. C. Chan,a
- T1 and T2 spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects
- Hyperfine-Field-Mediated Spin Beating in Electrostatically Bound Charge Carrier Pairs D. R. McCamey, K. J. van Schooten, W. J. Baker, S.-Y. Lee, S.-Y. Paik, J. M. Lupton,* and C. Boehme
- High-Field Phenomena of Qubits Johan van Tol G. W. Morley S. Takahashi
- Spin-dependent processes at the crystalline Si-SiO2 interface at high magnetic fields D. R. McCamey,1,* G. W. Morley,2 H. A. Seipel,1 L. C. Brunel,3 J. van Tol,3 and C. Boehme1,
- Spin-dependent processes in amorphous silicon-rich silicon-nitride S.-Y. Lee,1
- Spin and Charge Properties of Si:P Probed
- Experimental discrimination of geminate and non-geminate recombination in a-Si:H T. W. Herring,1 S.-Y. Lee,1 D. R. McCamey,1 P. C. Taylor,2 K. Lips,3 J. Hu,4 F. Zhu,4 A. Madan,4 and C. Boehme1,*
- Spin-dependent dynamics of polaron pairs in organic semiconductors D. R. McCamey,*, S.-Y. Lee, S.-Y. Paik, J. M. Lupton, and C. Boehme
- Fast Nuclear Spin Hyperpolarization of Phosphorus in Silicon D. R. McCamey,1,* J. van Tol,2
- Long-Lived Spin Coherence in Silicon with an Electrical Spin Trap Readout G. W. Morley,1,* D. R. McCamey,2
- INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol. 20 (2005) 363368 doi:10.1088/0268-1242/20/5/007
- Electrically detected magnetic resonance in ion-implanted Si:P nanostructures
- Single-electron transistor coupled to a silicon nano-MOSFET V.C. Chan1*
