- Materials Science and Engineering B74 (2000) 125132 Characterization of quantum well structures using surface
- Response: In our recent letter' we have theoretically ana-lyzed an experimental finding described in a previous pub-
- Surface photovoltage spectroscopy of In&U, -,As epilayers L. Burstein AndyYoram Shapiraa)
- Surface Science 409 (1998) 485500 Quantitative assessment of the photosaturation technique
- Electronic Properties of Si Surfaces and Side Reactions during Electrochemical Grafting of Phenyl Layers
- Illumination induced charge separation at tetraphenyl-porphyrin/metal oxide interfaces
- Studies of phase segregation in Cd1xZnxTe using surface photovoltage spectroscopy
- 0167-9317/$ -see front matter Published by Elsevier B.V. doi:10.1016/j.mee.2007.04.094
- Charge transfer from TiO2 into adsorbed benzene diazonium compounds Tel-Aviv University, School of Electrical Engineering, Ramat-Aviv 69978, Israel
- 2004 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 Characterization of Transient Gate Oxide Trapping in
- Changes in the photoelectrical properties and generation of photoinduced defects under light/air exposure of C60 thin films
- Determining band offsets using surface photovoltage spectroscopy: The InP/In0.53Ga0.47As heterojunction
- Surface photovoltage spectroscopy of a GaAs/AlGaAs heterojunction bipolar transistor
- Cooperative effects and dipole formation at semiconductor and self-assembled-monolayer Amir Natan,1,2
- Ion implantation and SiC transistor performance M. Gurfinkel,1,a
- This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 4, APRIL 2008 1067 Nonuniform RF Overstress in High-Power
- Apparent Semiconductor Type Reversal in Anatase TiO2 Nanocrystalline Films David S. Warren,*, Yoram Shapira, Horst Kisch, and A. James McQuillan
- Light-induced charge separation in thin tetraphenyl-porphyrin layers deposited on Au Y. Zidon and Yoram Shapira*
- This article was published in an Elsevier journal. The attached copy is furnished to the author for non-commercial research and
- Electrostatic Properties of Adsorbed Polar Molecules: Opposite Behavior of a Single Molecule and a Molecular
- Modulated charge separation at tetraphenyl porphyrin/Au interfaces and Yoram Shapira
- Study of leakage-induced photon emission processes in sub-90 nm CMOS devices
- Introductory Invited Paper Electronic circuit reliability modeling
- Atomic Force and Scanning Electron Microscopy of Atmospheric Particles
- Molecule-solid interfaces studied with infrared ellipsometry: Ultrathin nitrobenzene films
- Photoexcited carriers in organic light emitting materials and blended films observed by surface photovoltage spectroscopy
- Surface photovoltage spectroscopy of metamorphic high electron mobility transistor structures
- High-resolution scanning electron microscopy of dopants in p-i-n junctions with quantum wells
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 2, FEBRUARY 2003 479 Impact Ionization Measurements
- Electronic and transport properties of reduced and oxidized nanocrystalline A. Rothschilda)
- Light-emitting devices based on ruthenium,,II...,,4,7-diphenyl-1, 10-phenanthroline...3 : Device response rate and efficiency
- Surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors
- Characterization methodology for pseudomorphic high electron mobility transistors using surface photovoltage spectroscopy
- Surface photovoltage phenomena: theory, experiment, and applications
- Surface photovoltage spectroscopy of an InGaAs/GaAs/AlGaAs single quantum well laser structure
- Surface photovoltage spectroscopy of porous silicon L. Burstein and Y. Shapira
- Surface photovoltage spectroscopy of thin films M. Leibovitch, L. Kronik, E. Fefer, L. Burstein, V. Korobov, and Yoram Shapiraa)
- Reflection anisotropy spectroscopy, surface photovoltage spectroscopy, and contactless electroreflectance investigation of the
- Direct determination of the band-gap states in hydrogenated amorphous silicon using surface photovoltage spectroscopy
- Band diagram of the polycrystalline CdS/Cu(In,Ga)Se2 heterojunction L. Kronik, L. Burstein, M. Leibovitch, and Yoram Shapiraa)
- Structure and conductance evolution of very thin indium oxide films V. Korobov, M. Leibovitch, and Yoram Shapira
- lndium oxide Schottky junctions with InP and GaAs V. Korobov, M. Leibovitch, and Yoram Shapira
- Electronic structure at InP organic polymer layer interfaces N. Kinrot and Yoram Shapiraa)
- IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 8, NO. 4, DECEMBER 2008 635 Time-Dependent Dielectric Breakdown of
- Critical dimension improvement of plasma enhanced chemical vapor deposition silicon nitride thin films in GaAs devices
- Computing surface dipoles and potentials of self-assembled monolayers from first principles
- Surface electronic structure of p-InP using temperature-controlled surface photovoltage spectroscopy
- IEEE ELECTRON DEVICE LETTERS, VOL. 28, NO. 5, MAY 2007 357 Direct Monitoring of RF Overstress in High-Power
- Surface photovoltage spectroscopy of quantum wells and superlattices N. Bachrach-Ashkenasy, L. Kronik, and Yoram Shapiraa)
- Effect of deposition parameters on the properties of ih$&/llnP junctions V. Korobov and Yoram Shapira
- Yoram Shapira. D. Sc. Henry and Dinah Krongold Professor of Microelectronics
- Constructing band diagrams of semiconductor heterojunctions M. Leibovitch, L. Kronik, E. Fefer, V. Korobov, and Yoram Shapiraa)
- Electronic Structure of Methoxy-, Bromo-, and Nitrobenzene Grafted onto Si(111) Ralf Hunger,*, Wolfram Jaegermann, Alexandra Merson, Yoram Shapira,
- Interactions at tetraphenyl-porphyrin/InP interfaces observed by surface photovoltage spectroscopy
- SURFACE AND INTERFACE ANALYSIS Surf. Interface Anal. 2001; 31: 954965
- Surface states and surface oxide in GaN layers I. Shalisha)
- GaAs/AlGaAs single quantum well p-i-n structures: A surface photovoltage study
- Study of hot-carrier-induced photon emission from 90 nm Si MOSFETs
- Evolution of the In oxide/Si(lll) interface: Analysis by electron spectroscopies
- Laser surface photovoltage spectroscopy: A new tool for the determination of surface state distributions
- Alloy composition and electronic structure of Cd1xZnxTe by surface photovoltage spectroscopy
- Surface photovoltage spectroscopy study of reduced and oxidized nanocrystalline TiO2 films
