- Yield determination of OH (v 0,1) radicals produced by the electron-ion recombination of protonated molecules
- Charge generation during oxidation of thin Hf metal films on silicon Theodosia Gougousi , David B. Terry, Gregory N. Parsons
- Nucleation of HfO2 atomic layer deposition films on chemical oxide and H-terminated Si
- Process diagnostics and thickness metrology using in situ mass spectrometry for the chemical vapor deposition of W from H2 WF6
- Low Temperature Deposition of Metal Oxide Thin Films in Supercritical Carbon Dioxide using Metal-organic Precursors
- Growth and Interface Evolution of HfO2 Films on GaAs(100) Theodosia Gougousi,a,z
- Atomic Layer Deposition of Metal Oxide Films on GaAs (100) surfaces Theodosia Gougousi,1
- AlN/GaN insulated gate HEMTs with HfO2 gate dielectric
- Interface of atomic layer deposited HfO2 films on GaAs ,,100... surfaces Justin C. Hackley,1
- Author's personal copy Deposition of yttrium oxide thin films in supercritical carbon dioxide
- Nucleation Studies of HfO2 Thin Films Produced by Atomic Layer Deposition Justin C. Hackley1
- Metal Oxide Thin Films Deposited from Metal Organic Precursors in Supercritical CO2 Solutions
- Postdeposition reactivity of sputter-deposited high-dielectric-constant films with ambient H2O and carbon-containing species
- Carbonate formation during post-deposition ambient exposure of high-k dielectrics
- Kinetics Of Charge Generation During Formation Of Hf And Zr Silicate Dielectrics
- The role of the OH species in high-kpolycrystalline silicon gate electrode interface reactions
- Optical Spectroscopy of Recombining Ions in Flowing Afterglow Plasmas
- REAL-TIME CHEMICAL SENSING IN THIN FILM MULTICOMPONENT Theodosia Gougousi, Department of Materials and Nuclear Engineering and Institute for Systems
- Growth and interface of HfO2 films on H-terminated Si from a TDMAH and H2O atomic layer deposition process
- Author's personal copy Properties of atomic layer deposited HfO2 thin films
- In-situ Sensing Using Mass Spectrometry and its Use for Run-To-RunControl on a W-CVD Cluster Tool
- Measurement of the absolute yield of CO,,a 3 ... O products
- Photodissociation study of CH3Br in the first continuum Theodosia Gougousi, Peter C. Samartzis, and Theofanis N. Kitsopoulosa)
- Photofragmentation study of Cl2 using ion imaging Peter C. Samartzis, Ioannis Sakellariou,a)
- Author's personal copy Native oxide consumption during the atomic layer deposition of TiO2 films on
- Atomic Layer Deposition of HfO2 Thin Films on Si and GaAs Substrates Justin C Hackley1
- Supercritical-carbon dioxide-assisted cyclic deposition of metal oxide and metal thin films
- Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition
- Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon
- Run to run control in tungsten chemical vapor deposition using H2 WF6 at low pressures
- Thickness metrology and end point control in W chemical vapor deposition process from SiH4 WF6 using in situ mass spectrometry
- SPECTROSCOPIC EMISSIONS FROM THE RECOMBINATION OF N2O+ , AND LIF MEASUREMENTS OF THE H ATOM
- ForPeerReview Copyright line will be provided by the publisher
- HfO2-insulated gate N-polar GaN HEMTs with high breakdown voltage
- Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors
