- Direct write electron beam patterning of DNA complex thin films R. A. Jones, W. X. Li, H. Spaeth, and A. J. Steckla
- Demonstration of Fluorescent RGB Electrowetting Devices for Light Wave Coupling Displays
- Blue emission from Tm-doped GaN electroluminescent devices A. J. Steckl,a)
- Enhanced blue emission from Tm-doped AlxGa1xN electroluminescent D. S. Lee and A. J. Steckla)
- Structural characterization of nanometer Sic films grown on Si J. P. Li and A. J. Steckl
- SiC rapid thermal carbonization of the (111)Si semiconductor-on-insulator structure and subsequent metalorganic chemical vapor deposition
- Room-temperature-grown rare-earth-doped GaN luminescent thin films D. S. Lee and A. J. Steckla)
- Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates
- 35.2 / J. Heikenfeld 1098 SID 03 DIGEST
- Development of an ErNi liquid alloy ion source L. C. Chao and A. J. Steckla)
- Photoluminescence properties of in situ Tm-doped AlxGa1xN U. Hommericha)
- Proc. Advanced Workshop on Frontiers in Electronics (WOFE), Tenerife, Spain Jan. 1997 IEEE Cat. No. 97TH8292
- 2324 Journal of The Electrochemical Society, 147 (6) 2324-2327 (2000) S0013-4651(99)07-012-3 CCC: $7.00 The Electrochemical Society, Inc.
- GaAs quantum well distributed Bragg reflection laser with AlGaAs/GaAs superlattice gratings fabricated by focused ion beam mixing
- Temperature dependence of energy transfer mechanisms in Eu-doped GaN Chang-Won Lee
- Atomic probe microscopy of 36 SIC films grown on 6H SIC substrates A. J. Steckl and M. D. Roth
- IEffect of carbonization on the growth of 3C-Sic on Si (111) by silacyclobutane
- COMMENTARY nature photonics | VOL 1 | JANUARY 2007 | www.nature.com/naturephotonics 3
- Direct and indirect photoluminescence excitation and ultraviolet emission from Tm-doped AlxGa1-xN
- Red light emission by photoluminescence and electroluminescence from Eu-doped GaN
- Published in 'Silicon Carbide, III-Nitrides and Related Materials', Year: 1998, pp: 937-940 Periodical: Materials Science Forum Vols. 264-268
- 3.2: Invited Paper: Biopolymers in Light Emitting Devices Andrew J. Steckl , Joshua A. Hagen, Zhou Yu, Robert A. Jones,
- Damage generation and removal in the Ga focused ion beam micromachining of GaN for photonic applications
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 4, APRIL 2002 557 Electroluminescent Devices Using a
- Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substrates
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 9, SEPTEMBER 2002 1545 Rare-Earth-Doped GaN Switchable Color
- Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy
- Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu
- Color tunable organic light emitting diodes using Eu complex doping W.X. Li, J. Hagen, R. Jones, J. Heikenfeld, A.J. Steckl *
- Stain-etched porous silicon visible light emitting diodes J. Xu and A. J. Steckla)
- 10.1117/2.1201101.003443 Electrowetting: a flexible
- Unidirectional self-patterning of CaF2 nanorod arrays using capillary Nanoelectronics Laboratory, Department of Electrical and Computer Engineering,
- Immunoassay on Free-Standing Electrospun Dapeng Wu, Daewoo Han, and Andrew J. Steckl*
- Dose effects in electron beam irradiation of DNA-complex thin films W. Li, R. Jones, H. Spaeth, and A. J. Steckla
- 11698 DOI: 10.1021/la901646d Langmuir 2009, 25(19), 1169811702Published on Web 08/13/2009 pubs.acs.org/Langmuir
- Superhydrophobic and Oleophobic Fibers by Coaxial Electrospinning Daewoo Han and Andrew Steckl
- Dynamics of ultraviolet emissions in Tm-doped AlN using above band gap N. Nepal,1,a
- Effect of Si and Er Co-doping on Green Electroluminescence from GaN:Er ELDs Rui Wang, and Andrew J Steckl
- Versatile Core-Sheath Biofibers using Coaxial Electrospinning Daewoo Han1
- Chirality of sulforhodamine dye molecules incorporated in DNA thin films A. J. Steckl,1,a
- p s sapplications and materials science www.pss-a.com
- Liquid-state field-effect transistors using electrowetting D. Y. Kim and A. J. Steckla
- Optical and magnetic properties of Eu-doped GaN J. Hite, G. T. Thaler, R. Khanna, C. R. Abernathy, and S. J. Peartona
- Challenges and Opportunities for Biophotonic Devices in the Liquid State and the Solid State
- Enhanced emission efficiency in organic light-emitting diodes using deoxyribonucleic acid complex as an electron blocking layer
- Site specific Eu3+ stimulated emission in GaN host
- Growth temperature dependence of optical modal gain and loss in GaN:Eu active medium
- GaN:Eu Interrupted Growth Epitaxy (IGE): Thin Film Growth and Electroluminescent Devices
- Demonstration of a visible laser on silicon using Eu-doped GaN thin films J. H. Park and A. J. Steckla
- JOURNAL OF DISPLAY TECHNOLOGY, VOL. 2, NO. 2, JUNE 2006 143 Maximizing Alq3 OLED Internal and External
- High-transmission electrowetting light valves J. Heikenfelda
- GaN:Eu electroluminescent devices grown by interrupted growth epitaxy C. Munasinghe, A.J. Steckl *
- EL 2004 Toronto Sept. 2004 Hybrid Inorganic/Organic Light Emitting Materials and Devices
- Hybrid Inorganic/Organic Devices for Solid State White Lighting Applications
- EL 2004 Toronto Sept. 2004 High luminance and efficient GaN:Eu inorganic EL devices for
- Intense switchable fluorescence in light wave coupled electrowetting devices
- WHY DEVELOP a new flat-panel-display (FPD) technology? Why try to
- Superlattices and Microstructures 36 (2004) 701705 www.elsevier.com/locate/superlattices
- Effect of optical excitation energy on the red luminescence of Eu3+ H. Y. Peng, C. W. Lee, and H. O. Everitta
- Materials Science and Engineering B105 (2003) 9196 Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN
- Materials Science and Engineering B105 (2003) 126131 New spectroscopic data of erbium ions in GaN thin films
- Optical amplification and electroluminescence at 1.54 m in Er-doped zinc silicate germanate on silicon
- Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition
- 1420 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 8, NO. 6, NOVEMBER/DECEMBER 2002 Photoluminescent and Electroluminescent
- Low-Cost Display Technology Utilizing Thick Dielectric Electroluminescent (TDEL) Devices on Glass Substrates
- LJournal of Alloys and Compounds 341 (2002) 6266 www.elsevier.com/locate/jallcom
- Ga flux dependence of Er-doped GaN luminescent thin films D. S. Lee and A. J. Steckla)
- Growth-temperature dependence of Er-doped GaN luminescent thin films D. S. Lee, J. Heikenfeld, and A. J. Steckla)
- 1348 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 8, AUGUST 2002 Contrast-Enhancement in Black Dielectric
- Optimum Er concentration for in situ doped GaN visible and infrared luminescence
- In-situ Er-doped GaN optical storage
- AC Operation of GaN:Er Thin Film Electroluminescent Display Devices J. Heikenfeld and A. J. Steckl1
- Digital thin-film color optical memory C. J. Chi and A. J. Steckla)
- Alternating current thin-film electroluminescence of GaN:Er J. Heikenfeld and A. J. Steckla)
- Materials Science and Engineering B81 (2001) 97101 Multiple color capability from rare earth-doped gallium nitride
- Photoluminescence studies and readwrite process of a strong two-photon absorbing chromophore
- Selected Topics in Photonics/Optoelectronics Research at the University of Cincinnati
- 48 Compound Semiconductor 6(1) January/February 2000 he lanthanide elements, commonly known as the "rare
- Published in 'Silicon Carbide and Related Materials -1999', Year: 2000, pp: 273-276 Periodical: Materials Science Forum Vols. 338-342
- RBS/Channeling study of Er doped GaN lms grown by MBE on Si1 1 1 substrates
- Room-temperature visible and infrared photoluminescence from Pr-implanted GaN films by focused-ion-beam direct write
- VISIBLE AND INFRARED RARE-EARTH ACTIVATED ELECTROLUMINESCENCE FROM ERBIUM DOPED GaN
- OPTICAL AND STRUCTURAL PROPERTIES OF Er -DOPED GaN GROWN BY MBE
- Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates
- Green electroluminescence from Er-doped GaN Schottky barrier diodes A. J. Steckl,a)
- 456 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 46, NO. 3, MARCH 1999 High-Voltage Ni and PtSiC Schottky Diodes
- Molecular beam epitaxy growth of SiC on Si,,111... from silacyclobutane J. Chen and A. J. Steckla)
- physF sttF solF @A PHPD THS @IWWUA ujet lssifitionX TIFVHFthY TVFQSFfsY UQFRHFxsY T
- Selective compositional mixing in GaAs/AIGaAs superlattice induced by low dose Si focused ion beam implantation
- Fabrication of visibly photoluminescent Si microstructures by focused ion beam implantation and wet etching
- Selective-area room temperature visible photoluminescence from SiC/Si heterostructures
- Growth of crystalline X-Sic on Si at reduced temperatures by chemical vapor deposition from `silacycllobutane
- low Si p+-n junctions fabricated by focused ion beam Ga+ implantation through thin Ti and TiSi2 layers
- Downloaded 08 Oct 2003 to 129.137.210.120. Redistribution subject to AIP license or copyright, see http://ojps.aip.org/japo/japcr.jsp Downloaded 08 Oct 2003 to 129.137.210.120. Redistribution subject to AIP license or copyright, see http://ojps.aip.org/ja
- Downloaded 08 Oct 2003 to 129.137.210.120. Redistribution subject to AIP license or copyright, see http://ojps.aip.org/japo/japcr.jsp Downloaded 08 Oct 2003 to 129.137.210.120. Redistribution subject to AIP license or copyright, see http://ojps.aip.org/ja
- 194 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 52, NO. 2, FEBRUARY 2005 High Brightness ZnS and GaN Electroluminescent
- On 2.7 m Emission from Er-doped Large Bandgap Hosts H. Vrielinck1,2
- Materials Science and Engineering B81 (2001) 116120 Spectroscopic studies of the visible and infrared luminescence from
- Photoluminescence from stain-etched polycrystalline Si thin films A. J. Steckl, J. Xu, and H. C. Mogul
- Combined Excitation Emission Spectroscopy of Europium ions in GaN and AlGaN , Z. Fleischman1
- Flexible electrowetting and electrowetting on flexible substrates Andrew J. Steckl*, Han You and Duk-Young Kim,
- Z .Optics Communications 150 1998 97100 Potential for size reduction of AlGaAs optical channel waveguide
- Enhanced blue and green emission in rare-earth-doped GaN electroluminescent devices by optical photopumping
- Published: January 21, 2011 r 2011 American Chemical Society 778 dx.doi.org/10.1021/bm101386w |Biomacromolecules 2011, 12, 778784
- Effect of Si codoping on Eu3+ luminescence in GaN
- Black and Blue: The Impact of Pigmented Thick Dielectrics for Superior Contrast Inorganic EL Displays
- 48 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 1, JANUARY 2002 Temperature Behavior of Visible and Infrared
- 618 DOI: 10.1021/la1036508 Langmuir 2011, 27(2), 618626Published on Web 12/10/2010 pubs.acs.org/Langmuir
- INTRODUCTION Silicon carbide is recognized1
- THIN-FILM inorganic electroluminescent (EL) displays are shattering longstanding
- Fabrication and performance characteristics of black-dielectric electroluminescent 160 80-pixel displays
- Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys N. Nepal,1,a
- 9474 DOI: 10.1021/la100035m Langmuir 2010, 26(12), 94749483Published on Web 03/23/2010 pubs.acs.org/Langmuir
- ISSN: 0003-6935 20 March 2007
- Selective enhancement of blue electroluminescence from GaN:Tm D. S. Lee and A. J. Steckla)
- Effect of growth conditions on Eu3 + luminescence in GaN
- Spectral and time-resolved photoluminescence studies of Eu-doped GaN Ei Ei Nyein and U. Hommericha)
- Reduced temperature growth of crystalline 3C-Sic films on GH-SIC by chemical vapor deposition from silacyclobutane
- 1234 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 12, NO. 9, SEPTEMBER 2000 CMOS-Based Photoreceiver Arrays for
- FOCUSED ION BEAM MICROMACHINING OF GaN PHOTONIC DEVICES Irving Chyr and A. J. Steckl
- Photocatalytic Self Cleaning Textile Fibers by Coaxial Electrospinning
- Electrowetting on Paper for Electronic Paper Duk Young Kim and Andrew J. Steckl*
- Low-voltage GaN:Er green electroluminescent devices J. Heikenfeld, D. S. Lee, M. Garter, R. Birkhahn, and A. J. Steckla)
- Excitation-Wavelength Dependent and Time-Resolved Photoluminescence Studies of Europium Doped GaN Grown by Interrupted Growth Epitaxy (IGE)
- Effect of Tm3+ -induced defects on the photoexcitation energy relaxation in Tm-doped AlxGa1-xN
- GaN focused ion beam micromachining with gas-assisted etching I. Chyr and A. J. Steckla)
- Eu-Doped GaN Films Grown by Phase Shift Epitaxy Mingyu Zhong and Andrew J. Steckl
- Doping-induced selective area photoluminescence in porous silicon A. J. Steckl, J. Xu, H. C. Mogul, and S. Mogren
- Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources
- IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 8, NO. 4, JULY/AUGUST 2002 749 Rare-Earth-Doped GaN: Growth, Properties, and
- Review of focused ion beam implantation mixing for the fabrication of GaAs-based optoelectronic devices
- A nearly ideal phosphor-converted white light-emitting diode Steven C. Allen and Andrew J. Steckla
- Biennial UGIM Symposium (2008) Electrospun Biopolymer-Based Micro/Nanofibers
- Journal of The Electrochemical Society, 146 (3) 1197-1202 (1999) 1197 S0013-4651(98)01-060-X CCC: $7.00 The Electrochemical Society, Inc.
- Optically active centers in Eu implanted, Eu in situ doped GaN, and Eu doped GaN quantum dots
- P-59 / Heikenfeld SID 04 DIGEST 1
- JOURNAL OF DISPLAY TECHNOLOGY, VOL. 3, NO. 2, JUNE 2007 155 ELiXIR--Solid-State Luminaire With Enhanced
- MgGa liquid metal ion source for implantation doping of GaN J. Cheng and A. J. Steckla)
- www.rsc.org/loc Volume 9 | 2009 | High Speed Nanofluidic Protein Accumulator
- Three-color electrowetting display device for electronic paper H. You and A. J. Steckla
- Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si
- Downloaded 08 Oct 2003 to 129.137.210.120. Redistribution subject to AIP license or copyright, see http://ojps.aip.org/japo/japcr.jsp Downloaded 08 Oct 2003 to 129.137.210.120. Redistribution subject to AIP license or copyright, see http://ojps.aip.org/ja
- Three-color integration on rare-earth-doped GaN electroluminescent Y. Q. Wang and A. J. Steckla)
- Downloaded 08 Oct 2003 to 129.137.210.120. Redistribution subject to AIP license or copyright, see http://ojps.aip.org/japo/japcr.jsp Downloaded 08 Oct 2003 to 129.137.210.120. Redistribution subject to AIP license or copyright, see http://ojps.aip.org/ja
- NanoLab#278 2001 Emissive Displays Conference/San Diego Nov. 2001 Rare-Earth-Doped GaN Phosphors for Electroluminescent Displays
- Local structure and bonding of Er in GaN: A contrast with Er in Si P. H. Citrin and P. A. Northrup
- COMPARISON OF THE OPTICAL PROPERTIES OF Er3+ GALLIUM NITRIDE PREPARED BY METALORGANIC
- Biennial UGIM Symposium (2008) I-V and Gain Characteristics of Electrowetting-Based Liquid Field Effect Transistor
- Doped nanoparticles DOI: 10.1002/smll.200700107
- Focused ion beam micromilling of GaN and related substrate materials ,,sapphire, SiC, and Si...
- Molecular Beam Deposition of DNA Nanometer Films
- Upconversion luminescence of Er-implanted GaN films by focused-ion-beam direct write
- Characterization of 3CSiC crystals grown by thermal decomposition of methyltrichlorosilane
- Laser action in Eu-doped GaN thin-film cavity at room temperature J. H. Park and A. J. Steckla)
- High-density Er-implanted GaN optical memory devices Boon K. Lee, Robert Chih-Jen Chi, David Liang-Chiun Chao, Ji Cheng, Irving Yeong-Ning Chry,
- 1342 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 23, NO. 3, MARCH 2005 Optical Properties of Er in Er-Doped Zn2Si0:5Ge0:5O4
- Lateral color integration on rare-earth-doped GaN electroluminescent D. S. Lee and A. J. Steckla)
- Published in 'Silicon Carbide, III-Nitrides and Related Materials', Year: 1998, pp: 1149-1152 Periodical: Materials Science Forum Vols. 264-268
