
- Thermoelectric Effect across the Metal-Insulator Domain Walls in VO2
- Finite element simulations of compositionally graded InGaN solar cells G.F. Brown a,b,n
- ACOUSTIC MICROGRAPH NORTHERN CALIFORNIA
- THE 21st ANNUAL ELECTRONIC MATERIALS
- .,-.4_) C~141 0 9.-Co Co 0 ~
- Determination of the minority carrier diffusion length in compositionally graded Cu,,In,Ga...Se2 solar cells using electron beam induced
- PROGRAM * *** **** * **** * * * **** * **** *** **** THE 22nd ANNUAL
- Strain effects in low-dimensional transition metal oxides Jinbo Cao a,b,
- 1 J U L Y 2 0 0 9 V O L U M E 106 NU M B E R
- NORTHERN CALIFORNIA METALLURGICAL SECTION
- The 36th Annual ELECTRONIC MATERIALS
- Thermal stability of amorphous GaN1-xAsx alloys A. X. Levander,1,2
- Determining surface Fermi level pinning position of InN nanowires using electrolyte gating
- Organization USPostagePaid
- Valence-band anticrossing in mismatched III-V semiconductor alloys K. Alberi,1,2 J. Wu,1,2 W. Walukiewicz,1 K. M. Yu,1 O. D. Dubon,1,2 S. P. Watkins,3 C. X. Wang,3 X. Liu,4 Y.-J. Cho,4 and
- 7:30 Registration MORNING SESSION (California Ballroom -Left)
- Annual Northern California Electronic
- Organization USPostagePaid
- Thermodynamics of strained vanadium dioxide single crystals Yijia Gu,1,a
- NORTHERN CALIFORNIA METALLURGICAL SECTION
- Strain-Induced Self Organization of Metal-Insulator Domains in
- Organization USPostagePaid
- Effects of point defects on thermal and thermoelectric properties of InN A. X. Levander,1,2
- Enhancing the Thermoelectric Power Factor with Highly Mismatched Isoelectronic Doping Joo-Hyoung Lee,1,4
- Strain engineering and one-dimensional organization of metalinsulator domains in
- 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics
- Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect
- Gate Coupling and Charge Distribution in Nanowire Field Effect Transistors
- Effects of surface states on electrical characteristics of InN and In1-xGaxN J. W. L. Yim,1,2 R. E. Jones,1,2 K. M. Yu,2 J. W. Ager III,2 W. Walukiewicz,2
- Current-Driven Phase Oscillation and Domain-Wall Propagation in WxV1-xO2
- J. Wu Group Research -2011 http://mse.berkeley.edu/~jwu
- University of California, Berkeley Hearst Memorial Mining Building
- The Thirty-Sixth Annual Ross Tucker Award Recipients Pratik Patel
- Thursday, March 20, 1975 Caba~aHyatt House
- THE FIFTH ANNUAL ELECTRONIC MATERIALS SYMPOSIUM
- C O~(~iC'-I r 4-~0~ th C
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- PROGRAM * *** ** * ** ***** ********* ********** * **** THE 24th ANNUAL
- THE 26th Annual NORTHERN CALIFORNTA
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- THE 33rd Annual NORTHERN CALIFORNIA
- The 34th Annual ELECTRONIC MATERIALS
- ELECTRONIC MATERIALS Friday, April 11, 2003
- University of California, Berkeley Injury and Illness Prevention Program
- Effects of Quantum Confinement on the Doping Limit of Semiconductor
- LL~1 ~) ~l) Northern California
- GaN1-xBix: Extremely mismatched semiconductor alloys A. X. Levander,1,2
- Superelastic metal-insulator phase transition in single-crystal VO2 nanobeams W. Fan,1,2 S. Huang,1 J. Cao,1,3 E. Ertekin,4,5 C. Barrett,1,3 D. R. Khanal,1,3 J. C. Grossman,5 and J. Wu1,3,4,*
- Synthesis and Ex Situ Doping of ZnTe and ZnSe Nanostructures with Extreme Aspect Ratios
- NORTHERN CALIFORNIA METALLURGICAL SECTION
- Dopant profiling and surface analysis of silicon nanowires using capacitancevoltage measurements
- NORTHERN CALIFORNIA METALLURGICAL SECTION
- Courtesy: J. Jinschek, FEI, Eindhoven, The Netherlands Electronic Materials Symposium 2010
- Electronic Materials The 37th Annual
- THE 20th ANNUAL ELECTRONIC MATERIALS
- Published: December 17, 2010 r 2010 American Chemical Society 466 dx.doi.org/10.1021/nl1032205 |Nano Lett. 2011, 11, 466470
- NORTHERN CALIFORNIA METALLURGICAL SECTION
- Sublimation of GeTe Nanowires and Evidence of Its Size Effect Studied by in Situ TEM
- Constant threshold resistivity in the metal-insulator transition of VO2 J. Cao,1,2 W. Fan,1,3 K. Chen,4 N. Tamura,4 M. Kunz,4 V. Eyert,5 and J. Wu1,2,*
- PROGRAM ************************************** THE 23rd ANNUAL
- LX12371B PRB June 13, 2011 20:40 PHYSICAL REVIEW B 00, 005200 (2011)1
- 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim phys. stat. sol. (b) 245, No. 5, 873877 (2008) / DOI 10.1002/pssb.200778731
- Organization USPostagePaid
- NORTHERN CALIF~~RNIA METALLURGICAL SECTION
- The 38th Annual MATERIALS SYMPOSIUM
- Low gap amorphous GaN1-xAsx alloys grown on glass substrate K. M. Yu,1,a
- 394 Laser & Photon. Rev. 3, No. 4, 394405 (2009) / DOI 10.1002/lpor.200810039 Abstract We review recent progress towards increasing so-
- NORTHERN CALIFORNIA METALLURGICAL SECTION
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- ~ a. L) cfl .~. 4.) ~ In
- 4--a0 l~ 0 Z ...-1,1 ,--
- Colossal thermal-mechanical actuation via phase transition in single-crystal VO2 microcantilevers
- Published: July 26, 2011 r 2011 American Chemical Society 3809 dx.doi.org/10.1021/nl2018806 |Nano Lett. 2011, 11, 38093815
- Published: July 07, 2011 r 2011 American Chemical Society 3207 dx.doi.org/10.1021/nl201460v |Nano Lett. 2011, 11, 32073213
- Efficient Photovoltaic Current Generation at Ferroelectric Domain Walls Jan Seidel,1,2
- Field-effect modulation of conductance in VO2 nanobeam transistors with HfO2 as the gate dielectric
- Mismatched alloy nanowires for electronic structure tuning Joanne W. L. Yim,1,2
- Doping of GaN12xAsx with high As content A. X. Levander,1,2
- 1 Heat Transfer across the Interface 2 between Nanoscale Solids and Gas
- INVITED FEATURE PAPERS Growth and transport properties of p-type GaNBi alloys
- Large Reaction Rate Enhancement in Formation of Ultrathin AuSi Eutectic Layers Tyler S. Matthews,1,2
- RAPID COMMUNICATIONS PHYSICAL REVIEW B 85, 020101(R) (2012)
- Ultra-long, free-standing, single-crystalline vanadium dioxide micro/nanowires grown by simple thermal evaporation
- PHYSICAL REVIEW B 85, 085111 (2012) Unusually long free carrier lifetime and metal-insulator band offset in vanadium dioxide
- The J. Wu Group Research -2012 http://mse.berkeley.edu/~jwu