- Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors
- The phase mismatch , including nonlinear (2 P A S) (3PA 6PP 6PS)
- Filling Narrow Trenches by Iodine-Catalyzed CVD of Copper and Manganese on Manganese Nitride Barrier/Adhesion Layers
- pubs.acs.org/cm Published on Web 12/22/2009 r 2009 American Chemical Society 352 Chem. Mater. 2010, 22, 352359
- Selective Chemical Vapor Deposition of Manganese Self-Aligned Capping Layer for Cu Interconnections
- Atomic Layer Deposition of Lanthanum-Based Ternary Oxides Hongtao Wang,a
- Ultrathin CVD Cu Seed Layer Formation Using Copper Oxynitride Deposition and Room Temperature
- Effects of Low Temperature O2 Treatment on the Electrical Properties of Amorphous LaAlO3 Films Made by Atomic Layer Deposition
- PAPER www.rsc.org/dalton | Dalton Transactions Synthesis and characterization of volatile liquid cobalt amidinates
- Vapor Deposition of Ruthenium from an Amidinate Precursor Huazhi Li,a
- Atmospheric pressure chemical vapor deposition of transparent conducting films of fluorine doped zinc oxide and their application
- Atomic Layer Deposition on Suspended Single-Walled Carbon Nanotubes via
- Tantalum(V) Nitride Inverse Opals as Photonic Structures for Visible Wavelengths Alessandro Rugge, Jin-Seong Park, Roy G. Gordon,*, and Sarah H. Tolbert*,
- Self-Aligned 40 nm Channel Carbon Nanotube Field-Effect Transistors With Subthreshold Swings Down to 70mV/decade
- layer or less. Several excellent reviews[1-4] provide an overview of ALD while this
- ALD of High-Dielectrics on Suspended Functionalized Damon B. Farmera
- Synthesis and Characterization of Copper(I) Amidinates as Precursors for Atomic Layer Deposition (ALD) of Copper Metal
- Determination of energy barrier profiles for high-k dielectric materials utilizing bias-dependent internal photoemission
- Sealing Porous Low-k Dielectrics with Silica Philippe de Rouffignac, Zhengwen Li, and Roy G. Gordon*,z
- Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides
- Atomic layer deposition of lanthanum aluminum oxide nano-laminates for electrical applications
- Cryst. Res. Technol. 39, No. 1, 85 88 (2004) / DOI 10.1002/crat.200310153 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for
- Low-temperature atomic-layer-deposition lift-off method for microelectronic and nanoelectronic applications
- Thin Solid Films 443 (2003) 14 0040-6090/03/$ -see front matter 2003 Elsevier B.V. All rights reserved.
- Subscriber access provided by HARVARD UNIV The Journal of Physical Chemistry C is published by the American Chemical
- FTIR study of copper agglomeration during atomic layer deposition of copper Jinhee Kwon,2
- Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current
- DOI: 10.1002/anie.200905360 First-Principles Simulations of Conditions of Enhanced Adhesion
- Atomic Layer Deposition of Ultrathin Copper Metal Films from a Liquid Copper(I) Amidinate Precursor
- Published: April 28, 2011 r 2011 American Chemical Society 10277 dx.doi.org/10.1021/jp202202x |J. Phys. Chem. C 2011, 115, 1027710283
- Computational Study on the Relative Reactivities of Cobalt and Nickel Amidinates via -H Migration
- pubs.acs.org/cm Published on Web 08/11/2010 r 2010 American Chemical Society 4964 Chem. Mater. 2010, 22, 49644973
- Subscriber access provided by HARVARD UNIV The Journal of Physical Chemistry C is published by the American Chemical
- On the Relative Stability of Cobalt-and Nickel-Based Amidinate Complexes
- Density Function Theory Study of Copper Agglomeration on the WN(001) Surface Jinping Wu,*, Bo Han, Chenggang Zhou, Xinjian Lei, Thomas R. Gaffney,
- Journal of Crystal Growth 249 (2003) 251261 Surface morphology and crystallinity control in the atomic
- pubs.acs.org/cm Published on Web 04/27/2010 r 2010 American Chemical Society 3060 Chem. Mater. 2010, 22, 30603066
- Nucleation and Adhesion of ALD Copper on Cobalt Adhesion Layers and Tungsten Nitride Diffusion Barriers
- ALD of Scandium Oxide from Scandium Tris(N,N -diisopropylacetamidinate) and Water
- Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor**
- DOI: 10.1002/cvde.200606485 Thin, Continuous, and Conformal Copper Films by Reduction
- Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors
- Atomic Layer Deposition of Lanthanum-Based Ternary Oxides Hongtao Wang,a
- Improved fill factors in amorphous silicon solar cells on zinc oxide by insertion of a germanium layer to block impurity incorporation
- DOI: 10.1021/la903212c 3911Langmuir 2010, 26(6), 39113917 Published on Web 01/21/2010 pubs.acs.org/Langmuir
- A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches**
- Impact of ultrathin Al2O3 diffusion barriers on defects in high-k LaLuO3 on Si
- Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis,,tert-butylimido...bis,,dimethylamido...tungsten
- Heteroepitaxy of single-crystal LaLuO3 on GaAs,,111...A by atomic layer Yiqun Liu,1
- IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 2, FEBRUARY 2008 183 Externally Assembled Gate-All-Around Carbon
- Atomic Layer Deposition of Y2O3 Thin Films from Yttrium Tris(N,N-diisopropylacetamidinate) and Water
- Tungsten Nitride Inverse Opals by Atomic Layer Deposition
- High density Ru nanocrystal deposition for nonvolatile memory applications
- 52 MRS BULLETIN/AUGUST 2000 Introduction
- High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally
- Low Temperature Atomic LayerLow Temperature Atomic Layer Deposition of Tin Dioxide, SnO2
- Impact of ultrathin Al2O3 barrier layer on electrical properties of LaLuO3 metal-oxide-semiconductor devices
- The Open Inorganic Chemistry Journal, 2008, 2, 11-17 11 1874-0987/08 2008 Bentham Science Publishers Ltd.
- Atomic-layer-deposited LaAlO3/SrTiO3 all oxide field-effect transistors Y.Q. Liu,2)
- In-situ FTIR Study of Atomic Layer Deposition (ALD) of Copper Metal Films , Jinhee Kwona
- Mechanisms of Atomic Layer Deposition on Substrates with Ultrahigh Aspect Ratios
- ALD of Hafnium Oxide Thin Films from Tetrakis,,ethylmethylamino...hafnium and Ozone
- DOI: 10.1002/ejic.200600960 Synthesis and Sublimation Kinetics of a Highly Volatile Asymmetric Iron(II)
- Low Temperature Epitaxial Growth of High Permittivity Rutile TiO2 on SnO2
- DOI: 10.1002/cvde.200506377 Atomic Layer Deposition of Praseodymium Aluminum Oxide for
- pubs.acs.org/cmr XXXX American Chemical Society Chem. Mater. XXXX, XXX, 000000 A
- nature materials | VOL 2 | NOVEMBER 2003 | www.nature.com/naturematerials 749 niform,conformalthinfilmshaveawidevarietyofapplicationsin
- Formation of Nickel Silicide from Direct-Liquid-Injection Chemical-Vapor-Deposited Nickel Nitride Films
- Highly Conformal Thin Films of Tungsten Nitride Prepared by Atomic Layer Deposition from a Novel
- Z .Thin Solid Films 392 2001 231 235 Atmospheric pressure chemical vapor deposition of
- Raman Characterization and Polarity Tuning of Aligned Single-Walled Carbon Nanotubes on Quartz
- First Experimental Demonstration of Gate-all-around III-V MOSFETs by Top-down Approach J. J. Gu 1)
- Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia
- ALTERNATING LAYER CHEMICAL VAPOR DEPOSITION (ALD) OF METAL SILICATES AND OXIDES FOR GATE INSULATORS
- IOP PUBLISHING NANOTECHNOLOGY Nanotechnology 19 (2008) 485705 (9pp) doi:10.1088/0957-4484/19/48/485705
- 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim1116 wileyonlinelibrary.com
- Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using
- Adv. Sci. Technol. (Faenza, Italy) 33, 1037-1050 (2003) TECHNOLOGICAL CHALLENGES FOR TRANSPARENT CONDUCTORS
- Downloaded 21 Apr 2011 to 128.103.93.241. Redistribution subject to ECS license or copyright; see http://www.ecsdl.org/terms_use.jsp Downloaded 21 Apr 2011 to 128.103.93.241. Redistribution subject to ECS license or copyright; see http://www.ecsdl.org/ter
- Mater. Res. Soc. Symp. Proc. 446, 383 (1997) 1 CHEMICAL VAPOR DEPOSITION AND PROPERTIES OF
- Mat. Res. Soc. Symp. Proc. Vol. 612 2000 Materials Research Society VOLATILE LIQUID PRECURSORS FOR THE CHEMICAL VAPOR DEPOSITION
- ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS Adv[ Mater[ Opt[ Electron[ 09\ 190100 "1999#
- Published: June 21, 2011 r 2011 American Chemical Society 3325 dx.doi.org/10.1021/cm200432t |Chem. Mater. 2011, 23, 33253334
- Atomic-layer-deposited LaAlO3/SrTiO3 all oxide field-effect transistors Y.Q. Liu,2)
- Atomic layer deposition of tin oxide with nitric oxide as an oxidant gas Jaeyeong Heo, Sang Bok Kim and Roy G. Gordon*
- Figure 3. Cross-sectional TEM of La1.7Y0.3O3/GaAs(111)A. The mismatch is
- ALDandCVDofCopper-BasedMetallizationfor MicroelectronicFabrication
- Novel Volatile Precursors of Palladium For ALD and CVD Deo V. Shenai,1 Qing Min Wang,1 Jean-Sbastien Lehn,1 and Roy G. Gordon2
- Three dimensional solid-state supercapacitors from aligned single-walled carbon nanotube array templates
- First Experimental Demonstration of Gate-all-around III-V MOSFETs by Top-down Approach J. J. Gu 1)
- (Sn,Al)OxFilmsGrownbyAtomicx LayerDeposition
- New Ni Amidinate Source for ALD/CVD of NiNx, NiO and NiSi , Thiloma Perera1
- Investigation of Thermal Stability and Delivery of Cobalt Amidinates and Novel Cobalt Formamidinates for Metallic Cobalt by ALD/CVD
