- VOLUME 77, NUMBER 26 P H Y S I C A L R E V I E W L E T T E R S 23 DECEMBER 1996 Imaging and Spectroscopy of Single InAs Self-Assembled Quantum Dots
- Experimental test of the planar tunneling model for ballistic electron emission spectroscopy Ian Appelbaum,1,2
- Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy
- Conduction band offsets in ordered-GaInP/GaAs heterostructures studied by ballistic-electron-emission microscopy
- Current transport in InPIn0.5,,Al0.6Ga0.4...0.5P self-assembled quantum dot heterostructures using ballistic electron emission
- Direct injection tunnel spectroscopy of a p-n junction Edward M. Likovich,1
- IOP PUBLISHING NANOTECHNOLOGY Nanotechnology 18 (2007) 235205 (5pp) doi:10.1088/0957-4484/18/23/235205
- VOLUME 82, NUMBER 18 P H Y S I C A L R E V I E W L E T T E R S 3 MAY 1999 Effect of Electron Scattering on Second Derivative Ballistic Electron Emission Spectroscopy
- Surface Science Reports 64 (2009) 169190 Contents lists available at ScienceDirect
- Ballistic electron emission luminescence spectroscopy of an InAs quantum dot heterostructure
- Transverse momentum nonconservation at the ErAs/GaAs interface K. J. Russell,* Ian Appelbaum,
- VOLUME 88, NUMBER 20 P H Y S I C A L R E V I E W L E T T E R S 20 MAY 2002 Imaging Subsurface Reflection Phase with Quantized Electrons
- Probing semiconductor band structures and heterojunction interface properties with ballistic carrier emission: GaAsAlxGa1-xAs as a model system
- Weak localization and mobility in ZnO nanostructures Edward M. Likovich,* Kasey J. Russell, Eric W. Petersen, and Venkatesh Narayanamurti
- IOP PUBLISHING NANOTECHNOLOGY Nanotechnology 20 (2009) 405603 (4pp) doi:10.1088/0957-4484/20/40/405603
- Observation of magnetoresistance polarity reversal in 3D to 2D tunneling in an asymmetric GaMnAs resonant tunneling diode
- Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study
- Vertically integrated optics for ballistic electron emission luminescence: Device and microscopy characterizations
- Dual-probe scanning tunneling microscope for study of nanoscale metal-semiconductor interfaces
- Evolution of the GaNxP1x alloy band structure: A ballistic electron emission spectroscopic investigation
- Observations of conduction-band structure of 4H-and 6H-SiC I. Shalish, I. B. Altfeder, and V. Narayanamurti
- Imaging and local current transport measurements of AlInP quantum dots grown on GaP
- Evolution of GaAs1xNx conduction states and giant AuGaAs1xNx Schottky barrier reduction studied by ballistic electron emission spectroscopy
- Staggered to straddling band lineups in InAs/Al,,As, Sb... S. Bhargava, H.-R. Blank, E. Hall, M. A. Chin, H. Kroemer, and V. Narayanamurtia)
- NANO EXPRESS Epitaxial Catalyst-Free Growth of InN Nanorods on c-Plane
- Direct observation of localized high current densities in GaN films E. G. Brazel,a)
- Ordering-induced band structure effects in GaInP2 studied by ballistic electron emission microscopy
- Measurement of the AlGaInAs/AlGaAs conduction-band offset using ballistic electron emission spectroscopy
- Ballistic-electron-emission spectroscopy of AlxGa1 xAs/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects
- Size-dependent impurity activation energy in GaN nanowires A. M. Girgis,2
- BEEM IMAGING AND SPECTROSCOPY OF BURIED STRUCTURES IN
- Scattering-assisted tunneling: Energy dependence, magnetic field dependence, and use as an external probe of two-dimensional transport
- Magnetoresistance in an asymmetric Ga1-xMnxAs resonant tunneling diode Edward Likovich,* Kasey Russell, Wei Yi, and Venkatesh Narayanamurti
- Observation of misfit dislocations at the InxGa1 xAs/GaAs interface by ballistic-electron-emission microscopy
- Electron transport through strongly coupled AlInPGaInP superlattices R. E. Martinez IIa)
- Hot-electron mean free path of ErAs thin films grown on GaAs determined by metal-base transistor ballistic electron emission spectroscopy
- INSTITUTE OF PHYSICS PUBLISHING NANOTECHNOLOGY Nanotechnology 16 (2005) 23422345 doi:10.1088/0957-4484/16/10/058
- Two dimensionally patterned GaNxAs1-x/GaAs nanostructures using N+ implantation followed by pulsed laser melting
