- Modulation doping in Ge(x)Si(1 -x)/Si strained layer heterostructures: Effects of alloy layer thickness, doping setback, and cladding layer
- The growth of novel silicon materials
- Proceedings of the 14th Biennial University/Government/Industry Microelectronics Symposium, Richmond VA, June 2001,
- 2002 IEEE/ASEE Frontiers in Education Meeting, Boston MA The Creation of Web-Based Interactive Virtual Experiments on Microelectronics and Nanoscience
- Growth of quantum fortress structures in Si1xGex Si via combinatorial deposition
- Precision placement of heteroepitaxial semiconductor quantum dots *, J.L. Gray a
- Conditions for self-assembly of quantum fortresses and analysis of their possible use as quantum cellular automata
- First Optically Active Molecular Electronic Wires
- Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography
- Vapor phase deposition of oligo,,phenylene ethynylene... molecules for use in molecular electronic devices
- Study of the room temperature molecular memory observed from a nanowell device
- 574 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 8, NO. 5, SEPTEMBER 2009 Fabrication and Characterization of Interconnected
- The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed
- Journal of Crystal Growth 81 (1987) 411--420 411 North-Holland, Amsterdam
- lower temperature of 660 DC, there was growth on areas not covered by Si02similar to that at 680 DC. In addition, there
- Invited Plenary Lecture, 1995 NIST Workshop on "Semiconductor Characterization: Present Status and Future Needs," pp. 459-66, W.M. Bullis, D.G. Seiler and A.C. Diebold Eds., AIP Press, Woodbuy NY, 1995
- Systematic studies of SiGe/Si islands nucleated via separate in situ or ex situ Ga+
- Nanowell device for the electrical characterization of metalmoleculemetal junctions
- Effects of molecular environments on the electrical switching with memory of nitro-containing OPEs
- The Electrical Behavior of Nitro Oligo(Phenylene Ethynylene)'s in Pure and Mixed Monolayers
- Systematic studies of SiGe/Si islands nucleated via separate in situ, or ex situ, Ga+ focused ion beam-guided
- Silicon-Based Semiconductor Heterostructures: Column IV Bandgap Engineering
