Yeom, Geun Young - Materials Engineering Department, Sungkyunkwan University

• Journal of the Korean Physical Society, Vol. 53, No. 2, August 2008, pp. 892$896 Plasma-Enhanced Chemical Vapor Deposition of SiO2 Thin Films
• Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for
• * Corresponding author. Fax: #44 141 552 1575. Current address: Institute of Photonics, University of Strathclyde, Glasgow, Scotland,
• Global warming gas emission during plasma cleaning process of silicon nitride using c-C4F8OO2 chemistry with additive Ar and N2
• Synthesis and characteristics of bis(2,4-dimethyl-8-quinolinolato)-(triphenylsilanolato)aluminum (III): A potential hole-blocking
• Journal of the Korean Physical Society, Vol. 47, No. 5, November 2005, pp. 889894 Effects of Tin Concentration and Post-Annealing on the Electrical
• Effects of BCl3 addition on ArCl2 gas in inductively coupled plasmas for lead zirconate titanate etching
• 2380 Journal of The Electrochemical Society, 147 (6) 2380-2384 (2000) S0013-4651(99)08-061-1 CCC: $7.00 The Electrochemical Society, Inc.
• Plasma Characteristics of Large Area Inductively Coupled Plasma System Using Ferrite-Module-Enhanced U-Type Antenna
• ORIGINAL PAPER Plasma Characteristics of Internal Inductively Coupled
• Highly efficient vertical laser-liftoff GaN-based light-emitting diodes formed by optimization of the cathode structure
• Reduction of the electrostatic coupling in a large-area internal inductively coupled plasma source using a multicusp magnetic field
• Dry etching of sapphire substrate for device separation in chlorine-based inductively coupled plasmas
• High Efficiency White Organic Light-Emitting Diodes from One Emissive Layer Chang Hyun JEONG, Jong Tae LIM, Mi Suk KIM, June Hee LEE, Jeong Woon BAE, and Geun Young YEOM
• Plasma and antenna characteristics of a linearly extended inductively coupled plasma system using multi-polar magnetic field
• Surface and Coatings Technology 171 (2003) 280284 0257-8972/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.
• IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 7, JULY 2008 1577 A Two-Step-Recess Process Based on
• Top-emitting organic light-emitting diodes with Ba/Ag/indium tin oxide cathode and built-in potential analyses in these devices
• Requirements of Neutral Beam Source Regarding Gas Pressure and Neutral Angle for Nanoscale Etching
• Effect of the surface texturing shapes fabricated using dry etching on the extraction efficiency of vertical light-emitting diodes
• Journal of The Electrochemical Society, 147 (5) 1807-1809 (2000) 1807 S0013-4651(99)09-040-0 CCC: $7.00 The Electrochemical Society, Inc.
• Plasma and impedance characteristics of internal linear antennas for flat panel display applications
• Effective plasma confinement by applying multipolar magnetic fields in an internal linear inductively coupled plasma system
• Delivered by Ingenta to: Korea Institute of Science & Technology (KIST)
• Characteristics of Inductively Coupled Plasma using Internal Double Comb-type Antenna for Flat Panel Display Processing
• Effect of neutral beam etching of p-GaN on the GaN device characteristics B. J. Park, K. S. Min, H. C. Lee, J. W. Bae, D. W. Kim, and G. Y. Yeoma
• Effect of GaN Microlens Array on Efficiency of GaN-Based Blue-Light-Emitting Diodes Dongwoo KIM
• Physical damage and contamination by magnetized inductively coupled plasmas and effects of various cleaning and annealing methods
• Etching of Copper Films for Thin Film Transistor Liquid Crystal Display using Inductively Coupled Chlorine-Based Plasmas
• This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research
• Thin Solid Films 420421 (2002) 579583 0040-6090/02/$ -see front matter 2002 Elsevier Science B.V. All rights reserved.
• Journal of the Korean Physical Society, Vol. 51, No. 3, September 2007, pp. 967971 Study on the Low-Angle Surface Scattering of the Low-Energy Ions
• Low impedance antenna arrangement of internal linear ICP source for large area FPD processing
• Materials Science and Engineering B82 (2001) 5052 High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively
• Journal of the Korean Physical Society, Vol. 42, February 2003, pp. S795S799 High Rate Sapphire Etching Using BCl3-Based Inductively Coupled Plasma
• Surface Roughness Variation during Si Atomic Layer Etching by Chlorine Adsorption Followed by an Ar Neutral
• The effect of Ar neutral beam treatment of screen-printed carbon nanotubes for enhanced field emission
• C4F8O/O2/N-based Additive Gases for Silicon Nitride Plasma Enhanced Chemical Vapor Deposition Chamber Cleaning with Low Global Warming Potentials
• Atomic layer etching of (100)/(111) GaAs with chlorine and low angle forward reflected Ne neutral beam
• tournl of the uoren hysil oietyD olF SPD xoF PD perury PHHVD ppF RUT$RVH Light-Emitting Characteristics of Top-Emitting Organic Light-Emitting
• Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam
• Roles of N2 gas in etching of platinum by inductively coupled ArCl2N2 plasmas
• Doped-Fluorine on Electrical and Optical Properties of Tin Oxide Films Grown by Ozone-Assisted Thermal CVD
• Precise Depth Control and Low-Damage Atomic-Layer Etching of HfO2 using BCl3 and Ar Neutral Beam
• ARTICLE IN PRESS Etching characteristics of multiple U-type internal linear inductively
• Journal of the Korean Physical Society, Vol. 48, No. 2, February 2006, pp. 256259 Characteristics of a Large-Area Plasma Source Using Internal Multiple
• Journal of the Korean Physical Society, Vol. 46, No. 4, April 2005, pp. 890894 Characteristic of SiO2 Films Deposited by Using Low-Temperature PECVD
• Effects of variously configured magnets on the characteristics of inductively coupled plasmas
• High-speed etching of SiO using a remote-type pin-to-plate dielectric barrier discharge at
• Atmospheric Pressure Remote Plasma Ashing of Photoresist Using Pin-To-Plate Dielectric Barrier Discharge
• Study of selective amorphous silicon etching to silicon nitride using a pin-to-plate dielectric barrier discharge in atmospheric pressure
• Characteristic of carbon nanotubes synthesized by pin-to-plate type atmospheric pressure plasma enhanced chemical vapor
• Characteristics of SiOx Thin Film Deposited by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition
• Journal of the Korean Physical Society, Vol. 52, No. 2, February 2008, pp. 313$317 Characteristics of a Ferromagnetic-Enhanced Inductively-Coupled
• Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme
• Vacuum 67 (2002) 185189 Effect of microstructures on the coercivity of Fe1xBx
• Z .Thin Solid Films 377 378 2000 103 108 Effects of oxygen radical on the properties of indium tin oxide
• Study of shallow silicon trench etch process using planar inductively coupled plasmas
• High-energy negative ion beam obtained from pulsed inductively coupled plasma for charge-free etching process
• This article was published in the above mentioned Springer issue. The material, including all portions thereof, is protected by copyright;
• Improvement of electron field emission from carbon nanotubes by Ar neutral beam treatment
• Surface Analysis of Atomic-Layer-Etched Silicon by Chlorine S. D. Park,a
• Enhanced Driving Performance of Organic Light-Emitting Diodes with All Carrier Ohmic-Contacts
• Journal of the Korean Physical Society, Vol. 38, No. 3, March 2001, pp. 259263 Characterization of an Oxygen Plasma by Using
• Atomic layer etching of InP using a low angle forward reflected Ne neutral beam
• Etch characteristics of GaN using inductively coupled Cl2 /Ar and Cl2 /BCl3 plasmas
• Effect of Halogen-Based Neutral Beam on the Etching of S.-K. Kang,a
• Four-wavelength white organic light-emitting diodes using -bis-[carbazoyl-(9)]-stilbene as a deep blue emissive layer
• Top-emitting organic light-emitting diodes based on semitransparent conducting cathode of Ba/Al/ITO
• Thin Solid Films 447448 (2004) 586591 0040-6090/04/$ -see front matter 2003 Elsevier B.V. All rights reserved.
• ARTICLE IN PRESS Characteristics of inductively coupled plasma with multiple U-type
• Effect of Fluorine Ion/Neutral-Beam Irradiation on Ohmic Contact Formation to n-Type GaN
• Characteristics of Parallel Internal-Type Inductively Coupled Plasmas for Large Area Flat Panel Display Processing
• Journal of The Electrochemical Society, 146 (4) 1517-1522 (1999) 1517 S0013-4651(98)04-044-0 CCC: $7.00 The Electrochemical Society, Inc.
• Selective plasma etching of ZrOx to Si using inductively coupled BCl3/C4F8 plasmas
• Thin Solid Films 445 (2003) 138143 0040-6090/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.
• Field emission properties of carbon nanotubes synthesized by capillary type atmospheric pressure plasma enhanced
• Surface and Coatings Technology 171 (2003) 231236 0257-8972/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.
• Z .Thin Solid Films 377 378 2000 115 121 Electrical, optical, and structural characteristics of ITO thin films
• High-Luminance Top-Emitting Organic Light-Emitting Diodes Using Cs/Al/Au as the Semitransparent Multimetal
• ORIGINAL PAPER Study of Internal Linear Inductively Coupled Plasma
• Surface and Coatings Technology 146147 (2001) 522527 0257-8972/01/$ -see front matter 2001 Elsevier Science B.V. All rights reserved.
• Journal of the Korean Physical Society, Vol. 47, No. 1, July 2005, pp. 7478 Characteristics of a Pin-to-Plate Dielectric Barrier Discharge in Helium
• Magnetized inductively coupled plasma etching of GaN in Cl2 BCl3 plasmas*
• Journal of the Korean Physical Society, Vol. 47, No. 1, July 2005, pp. 142147 Indium-Oxide Thin Films Deposited by Using an Oxygen-Ion-Beam-Assisted
• Fabrication of Si nano-pillar array through Ni nano-dot mask using inductively coupled plasma
• Plasma etching of SiO2 using remote-type pin-to-plate dielectric barrier Jae Beom Park,1
• Journal of the Korean Physical Society, Vol. 46, No. 4, April 2005, pp. 918921 Characteristics of Carbon Nanotubes Deposited by Using Low-Temperature
• Z .Surface and Coatings Technology 131 2000 252 256 Etching characteristics of lead magnesium niobate lead
• Journal of the Korean Physical Society, Vol. 47, No. 5, November 2005, pp. 824827 Growth and Field-Emission Properties of Multiwalled Carbon Nanotubes
• A Study of Electrical Damage to a-Si:H Thin Film Transistor during Plasma Ashing by a Pin-to-Plate Type Atmospheric Pressure Plasma
• Etching of CoFeB Using CONH3 in an Inductively Coupled Plasma Etching System
• Journal of the Korean Physical Society, Vol. 51, No. 3, September 2007, pp. 10461049 Thermally Stable Ti/Al/W/Au Multilayer Ohmic Contacts
• Characteristics of Ag Etching using Inductively Coupled Cl2-based Plasmas Young-Joon LEE, Sang-Duk PARK, Byoung-Kwan SONG, Sang-Gab KIM1
• Materials Science and Engineering B50 (1997) 8287 Effects of inductively coupled plasma conditions on the etch
• Etch characteristics of optical waveguides using inductively coupled plasmas with multidipole magnets
• Surface and Coatings Technology 171 (2003) 237240 0257-8972/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.
• IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 38, NO. 2, FEBRUARY 2010 133 Ferrite-Enhanced U-Shaped Internal Antenna for
• Plasma texturing of multicrystalline silicon for solar cell using remote-type pin-to-plate dielectric barrier discharge
• Surface and Coatings Technology 177178 (2004) 711715 0257-8972/04/$ -see front matter 2003 Elsevier B.V. All rights reserved.
• INSTITUTE OF PHYSICS PUBLISHING NANOTECHNOLOGY Nanotechnology 16 (2005) 31373141 doi:10.1088/0957-4484/16/12/068
• Improvement of field emission from screen-printed carbon nanotubes by He/,,N2,Ar... atmospheric pressure plasma treatment
• Thin Solid Films 447448 (2004) 100104 0040-6090/04/$ -see front matter 2003 Elsevier B.V. All rights reserved.
• Thin Solid Films 435 (2003) 242246 0040-6090/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.
• Delivered by Ingenta to: Korea Institute of Science & Technology (KIST)
• Thin Solid Films 435 (2003) 264269 0040-6090/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.
• Characteristics of Inductive Coupled Plasma with Internal Linear Antenna Using Multi-Polar Magnetic Field for FPD Processing
• Materials Science and Engineering B82 (2001) 159162 Etch end-point detection of GaN-based devices using optical
• Effect of capacitive to inductive coupling transition in multiple linear U-type antenna on silicon thin film deposition from pure SiH4 discharges
• Characteristics of Large Area Inductively Coupled Plasma Using a Multiple Linear Antennas with U-Type Parallel Connection
• Bulk and Interface effects on voltage linearity of ZrO2SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications
• Computer Physics Communications 177 (2007) 126 www.elsevier.com/locate/cpc
• Characteristics of SiO2-Like Thin Film Deposited by Atmospheric-Pressure PECVD Using HMDSO2Ar
• Journal of the Korean Physical Society, Vol. 48, No. 3, March 2006, pp. 422426 Plasma and Electrical Characteristics of a Novel Internal Linear Inductively
• Etching characteristics of SrBi2Ta2O9 film with ArCHF3 plasma Jung-Woo Seo
• Journal of the Korean Physical Society, Vol. 47, No. 3, September 2005, pp. 463468 Effect of Pretreatment on the Deposition of Carbon Nanotubes by Using
• The effects of surface terminal bonds and microstructure of SiO2 aerogel lms on dry etching
• Journal of the Korean Physical Society, Vol. 40, No. 4, April 2002, pp. 567571 Surface Properties of GaN Fabricated by Laser Lift-Off and ICP Etching
• ORIGINAL PAPER Plasma Characteristics and Antenna Electrical
• Thin Solid Films 398399 (2001) 652656 0040-6090/01/$ -see front matter 2001 Elsevier Science B.V. All rights reserved.
• Journal of the Korean Physical Society, Vol. 54, No. 3, March 2009, pp. 981$985 Characteristics of SiOx Thin Films Deposited by Using
• Journal of the Korean Physical Society, Vol. 54, No. 3, March 2009, pp. 976$980 Etch Characteristics of TiO2 Etched by Using an Atomic Layer
• Surface and Coatings Technology 171 (2003) 285289 0257-8972/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.
• Plasma Characteristics of 450 mm Diameter Ferrite-Enhanced Inductively Coupled Plasma Source
• Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching
• Journal of the Korean Physical Society, Vol. 51, No. 3, September 2007, pp. 11471151 Transparent Top-Emitting Organic Light-Emitting Diodes Using a
• Effect of CaO addition on the ring voltage of MgO lms in AC plasma display panels
• Effect of dual frequency on the plasma characteristics in an internal linear inductively coupled plasma source
• Loss current minimization during ion extraction from an inductively coupled plasma
• A study of GaN etch mechanisms using inductively coupled Cl2/Ar Hyeon-Soo Kima,*, Geun-Young Yeoma
• Generation of low-energy neutral beam for Si etching S. J. Kim, S. J. Wang, and J. K. Leea)
• Surface and Coatings Technology 177178 (2004) 752757 0257-8972/04/$ -see front matter 2003 Elsevier B.V. All rights reserved.
• Journal of the Korean Physical Society, Vol. 49, No. 6, December 2006, pp. 23072310 CF4-Based Neutral-Beam Etch Characteristics of Si and SiO2 Using a
• Characteristics of Organic Light-Emitting Devices by the Surface Treatment of Indium Tin Oxide Surfaces Using Atmospheric Pressure Plasmas
• Ion Bombardment during the Deposition of SiOX by AC-Biasing in a Remote-Type Atmospheric Pressure Plasma
• Investigation of the plasma uniformity in an internal linear antenna-type inductively coupled plasma source by applying dual frequency
• Characteristics of internal inductively coupled plasma with a ferrite module This article has been downloaded from IOPscience. Please scroll down to see the full text article.
• Characteristics of Internal Inductively Coupled Plasma Source for Ultralarge-Area Plasma Processing
• Effect of DC Bias Voltage on the Characteristics of Low Temperature SiliconNitride Films Deposited by Internal Linear Antenna Inductively Coupled Plasma Source
• Fabrication of nano-crystalline silicon thin film at low temperature by using a neutral beam deposition method
• Polyimide Surface Treatment by Atmospheric Pressure Plasma for Metal Adhesion
• Enhancement-Mode Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors on Glass Substrates Using N2O Plasma Treatment
• IOP PUBLISHING JOURNAL OF PHYSICS D: APPLIED PHYSICS J. Phys. D: Appl. Phys. 42 (2009) 015204 (5pp) doi:10.1088/0022-3727/42/1/015204
• Neutralization efficiency estimation in a neutral beam source based on inductively coupled plasma
• Electronic structures of Ba-on-Alq3 interfaces and device characteristics of organic light-emitting diodes based on these interfaces
• Atmospheric pressure PECVD of SiO2 thin film at a low temperature using HMDS/O2/He/Ar
• IOP PUBLISHING JOURNAL OF PHYSICS D: APPLIED PHYSICS J. Phys. D: Appl. Phys. 42 (2009) 155204 (6pp) doi:10.1088/0022-3727/42/15/155204
• Effect of Antenna Diameter on the Characteristics of Internal-Type Linear Inductively Coupled Plasma
• Delivered by Ingenta to: Korea Institute of Science & Technology (KIST)
• Light-Emitting Characteristics of Organic Light-Emitting Diodes with Ba/Al Cathode and Effect of Ba Thickness by Measuring their Built-in Potential
• IOP PUBLISHING JOURNAL OF PHYSICS D: APPLIED PHYSICS J. Phys. D: Appl. Phys. 41 (2008) 024005 (13pp) doi:10.1088/0022-3727/41/2/024005
• Uniformity of internal linear-type inductively coupled plasma source for flat panel display processing
• Neutralized fluorine radical detection using single-walled carbon nanotube network
• Laser Annealing on Ti Electrode: Impact on TiHfO2SiO2 n-Type MOSFET
• X-ray photoelectron spectroscopic study of Ge2Sb2Te5 etched by fluorocarbon inductively coupled plasmas
• Scalable internal linear double comb-type inductively coupled plasma source for large area flat panel display processing
• Characteristics of Plasma Using a Ferromagnetic Enhanced Inductively Coupled Plasma Source
• Effect of initial crystallized silicon layer on the properties of microcrystalline silicon grown by internal inductively coupled plasma-type plasma enhanced chemical
• Journal of the Korean Physical Society, Vol. 53, No. 3, September 2008, pp. 1675$1679 Selective Etching of HfO2 by Using Inductively-Coupled Ar/C4F8 Plasmas and
• SiOxNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using HMDSO2NH3Ar gas mixtures
• Top-emitting organic light-emitting diode using transparent conducting indium oxide layer fabricated by a two-step ion beam-assisted deposition
• Effects of inductively coupled plasma treatment using O2, CF4, and CH4 on the characteristics of organic light emitting diodes
• Growth of carbon nanotubes by atmospheric pressure plasma enhanced chemical vapor deposition using NiCr catalyst
• Journal of the Korean Physical Society, Vol. 50, No. 4, April 2007, pp. 11301135 Anisotropic Etching of InP and InGaAs by Using an Inductively Coupled
• Effect of additive gases on the selective etching of ZrOx film using inductively coupled BCl3-based plasmas
• Journal of the Korean Physical Society, Vol. 50, No. 6, June 2007, pp. 17991802 Synthesis, Structural Characterization and Photoluminescence
• Top-Emitting Organic Light-Emitting Diodes Using Cs/Al/Ag Cathodes Jong Tae LIM, Chang Hyun JEONG, Mi Suk KIM, June Hee LEE,
• Journal of the Korean Physical Society, Vol. 51, No. 3, September 2007, pp. 10191022 Blue Organic Light-Emitting Diodes Fabricated by Using
• Highly selective and low damage atomic layer etching of InP/InAlAs heterostructures for high electron mobility transistor fabrication
• Journal of the Korean Physical Society, Vol. 51, No. 6, December 2007, pp. 1934$1939 Eect of Ion Bombardment on the Chemical and the Mechanical
• High-speed etching of amorphous silicon using pin-to-plate dielectric barrier discharge
• 1086 IEEE ELECTRON DEVICE LETTERS, VOL. 28, NO. 12, DECEMBER 2007 Effect of a Two-Step Recess Process Using Atomic
• Journal of the Korean Physical Society, Vol. 48, No. 1, January 2006, pp. 8992 Characteristics of SiOxNy Films Deposited by PECVD at Low-Temperature
• White Organic Light-Emitting Diodes Using Bis(2,4-dimethyl-8-quinolinolato)(triphenylsilanolato) Aluminum(III)
• Study on the O2 Plasma Treatment of Indium Tin Oxide for Organic Light Emitting Diodes Using Inductively Coupled Plasma
• Deposition of carbon nanotubes by capillary-type atmospheric pressure PECVD
• Characteristics of a Multilayer SiOx(CH)yNz Film Deposited by Low Temperature Plasma Enhanced Chemical Vapor Deposition
• White organic light-emitting diodes from three emitter layers M.S. Kim, J.T. Lim, C.H. Jeong, J.H. Lee, G.Y. Yeom
• Nanostructures Fabrication on Ta Thin Film Using Atomic Force Microscope Lithography
• Low-impedance internal linear inductive antenna for large-area flat panel display plasma processing
• Novel Internal Linear Inductively Coupled Plasma Source for Flat Panel Display Applications Kyong Nam KIM, Seung Jae JUNG and Geun Young YEOM
• The Effect of N2 Flow Rate in He/O2/N2 on the Characteristics of Large Area Pin-to-Plate Dielectric Barrier Discharge
• Properties and Applications of a Modified Dielectric Barrier Discharge Generated at Atmospheric Pressure
• A study of transparent contact to vertical GaN-based light-emitting diodes D. W. Kim, H. Y. Lee, and G. Y. Yeoma
• Characteristics of Silicon Carbide Etching Using Magnetized Inductively Coupled Plasma Hyo Young LEE, Dong Woo KIM, Yeon Jun SUNG1
• Fabrication of SiC micro-lens by plasma etching H.Y. Leea,*, D.W. Kima
• Journal of the Korean Physical Society, Vol. 46, No. 4, April 2005, pp. 867871 Removal of Aspect-Ratio-Dependent Etching by Low-Angle Forward
• Precise Depth Control of Silicon Etching Using Chlorine Atomic Layer Etching Sang-Duk PARK, Kyung-Suk MIN, Byoung-Young YOON, Do-Haing LEE and Geun-Young YEOM
• Atomic Layer Etching of Si(100) and Si(111) Using Cl2 and Ar Neutral Beam
• Journal of the Korean Physical Society, Vol. 47, No. 3, September 2005, pp. 469473 Atomic Layer Etching of Cl-Adsorbed Silicon by Using a Low-Angle Forward
• Deposition of SiO2 by Plasma Enhanced Chemical Vapor Deposition as the Diffusion Barrier to Polymer Substrates
• Properties of SiOxNy thin film deposited by low temperature plasma enhanced chemical vapor deposition using
• Journal of the Korean Physical Society, Vol. 47, No. 2, August 2005, pp. 277282 Structural and Electrical Analysis of Silicon Thin Films Deposited by
• Surface and Coatings Technology 177178 (2004) 420425 0257-8972/04/$ -see front matter 2003 Elsevier B.V. All rights reserved.
• Surface and Coatings Technology 177178 (2004) 705710 0257-8972/04/$ -see front matter 2003 Elsevier B.V. All rights reserved.
• 1362 IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 32, NO. 3, JUNE 2004 Magnetically Enhanced Inductively Coupled Plasma
• Journal of the Korean Physical Society, Vol. 42, February 2003, pp. S804S808 Effects of Additive Gases on Ag Etching Using Inductively Coupled Cl2-Based
• Materials Science in Semiconductor Processing 5 (2003) 419423 Internal linear inductively coupled plasma (ICP) sources for
• Effect of an Atmospheric Pressure Plasma Cleaning on the Outgassing Characteristics of MgO Layer for Plasma Display Panel
• Journal of the Korean Physical Society, Vol. 42, February 2003, pp. S800S803 Effect of N-based Gases to C3F8/O2 on Global Warming during Silicon
• A study of GaN etching characteristics using HBr-based inductively coupled plasmas
• Surface and Coatings Technology 163164 (2003) 723727 0257-8972/03/$ -see front matter 2002 Elsevier Science B.V. All rights reserved.
• Thin Solid Films 435 (2003) 275279 0040-6090/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.
• Surface and Coatings Technology 171 (2003) 267272 0257-8972/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.
• Journal of the Korean Physical Society, Vol. 42, February 2003, pp. S809S813 The Etching Mechanism of (Zr0.8Sn0.2)TiO4(ZST) Film by Using Cl2/O2-Gas
• 110 IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 30, NO. 1, FEBRUARY 2002 Particle-in-Cell Simulation of a Neutral Beam
• A Study of Sapphire Etching Characteristics Using BCl3-based Inductively Coupled Plasmas Chang Hyun JEONG, Dong Woo KIM, Kyong Nam KIM and Geun Young YEOM
• Jpn. J. Appl. Phys. Vol. 41 (2002) pp. L 999L 1001 Part 2, No. 9A/B, 15 September 2002
• Jpn. J. Appl. Phys. Vol. 41 (2002) pp. L 1495L 1498 Part 2, No. 12B, 15 December 2002
• Jpn. J. Appl. Phys. Vol. 41 (2002) pp. L 1412L 1415 Part 2, No. 12A, 1 December 2002
• Thin Solid Films 398399 (2001) 647651 0040-6090/01/$ -see front matter 2001 Elsevier Science B.V. All rights reserved.
• Thin Solid Films 398399 (2001) 8792 0040-6090/01/$ -see front matter 2001 Elsevier Science B.V. All rights reserved.
• Investigation of the outgassing characteristics of the materials comprising a plasma display panel
• Indium-tin-oxide thin lm deposited by a dual ion beam assisted e-beam evaporation system
• Z .Thin Solid Films 383 2001 281 283 Dry etching characteristics of ITO thin films deposited on plastic
• Surface and Coatings Technology 146147 (2001) 474479 0257-8972/01/$ -see front matter 2001 Elsevier Science B.V. All rights reserved.
• Refractive sapphire microlenses fabricated by chlorine-based inductively coupled plasma etching
• Z .Surface and Coatings Technology 131 2000 257 260 A study of lead zirconate titanate etching characteristics
• Z .Surface and Coatings Technology 131 2000 247 251 A study on the etch characteristics of ITO thin film using
• Z .Surface and Coatings Technology 131 2000 201 205 Properties of amorphous tin-doped indium oxide thin films
• Z .Surface and Coatings Technology 133 134 2000 612 616 Characteristics of magnetized inductively coupled plasma
• * Corresponding author. Tel.: #82-331-290-7428; fax: #82-331-E-mail address: jobae@nature.skku.ac.kr (J.W. Bae).
• Erratum: ``Effects of BCl3 addition on ArCl2 gas in inductively coupled plasmas for lead zirconate titanate etching''
• Etching mechanism of ,,Ba,Sr...TiO3 films in high density Cl2 BCl3 Ar plasma Seung-Bum Kim, Yong-Hyuk Lee,a)
• Characteristics of inductively coupled Cl2 /BCl3 plasmas during GaN etching
• Facet formation of a GaN-based device using chemically assisted ion beam etching with a photoresist mask
• Effects of CdS substrates on the physical properties of polycrystalline Y.H. Leea,*, W.J. Leea
• Etch-induced damage in single crystal Si trench etching by planar inductively coupled Cl2/N2 and Cl2/HBr plasmas
• Study on surface reaction of ,,Ba,Sr...TiO3 thin films by high density plasma etching
• Investigation of surface polymerization on silicon exposed to C4F8 helicon wave plasmas
• Thermal stability enhancement of Cu/WN/SiOF/Si multilayers by post-plasma treatment of fluorine-doped silicon dioxide
• Study of radiation damage and contamination by magnetized inductively coupled plasma etching
• Downloaded 30 Jun 2006 to 61.72.111.153. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/copyright.jsp Downloaded 30 Jun 2006 to 61.72.111.153. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/c
• Downloaded 30 Jun 2006 to 61.72.111.153. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/copyright.jsp Downloaded 30 Jun 2006 to 61.72.111.153. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/c
• Journal of the Korean Physical Society, Vol. 33, No. , November 1998, pp. S135S137 A Preliminary Study on the Etching Behavior of SiO2
• Effect of antenna capacitance on the plasma characteristics of an internal linear inductively coupled plasma system
• Journal of the Korean Physical Society, Vol. 49, No. 4, October 2006, pp. 14601464 Investigation of the Magnetic Properties of an RF-Driven
• This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research
• Z .Surface and Coatings Technology 133 134 2000 606 611 Dry etch characteristics of Al-Nd films for TFT-LCD
• Effect of Indium-Oxide Deposited Using an Oxygen Ion-Beam-Assisted-Deposition to Top-Emitting Organic Light-Emitting Diodes
• Effects of Axial Magnetic Field on Neutral Beam Etching by Low-Angle Forward-Reflected Neutral Beam Method
• Journal of the Korean Physical Society, Vol. 52, No. 2, February 2008, pp. 308$312 Comparison of the Electrical Characteristics of Serpentine-Type
• Etching properties of Pt thin films by inductively coupled plasma Kwang-Ho Kwon
• Effect of N2O Plasma Treatment on the Performance of ZnO K. Remashan,a
• Journal of the Korean Physical Society, Vol. 50, No. 5, May 2007, pp. 12711275 Energy Shift During Ion Extraction from an ICP Source
• IOP PUBLISHING JOURNAL OF PHYSICS D: APPLIED PHYSICS J. Phys. D: Appl. Phys. 42 (2009) 055202 (5pp) doi:10.1088/0022-3727/42/5/055202
• JOURNAL OF MATERIALS SCIENCE 34 (1999) 5055 5059 Low-voltage characteristics of MgO-CaO
• White top-emitting organic light-emitting diodes using one-emissive layer of the DCJTB doped DPVBi layer
• Photoresist ashing technology using N2/O2 ferrite-core ICP in the dual damascene process
• The effect of atmospheric pressure plasma treatment on the field emission characteristics of screen printed carbon nanotubes
• Etch damage evaluation of low-angle, forward-reflected neutral beam etching
• ORIGINAL PAPER Plasma Characteristics of a NiZn Ferrite Enhanced
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