Abebe, Henok - Department of Physics and Astronomy, California State University, Los Angeles

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Abebe, Henok - Department of Physics and Astronomy, California State University, Los Angeles

Abstract--The MOS gate capacitance model presented here is determined by directly solving the coupled Poisson equations on
MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation
The CMOS (complementary-metal-oxide-silicon) scaling rules require that advanced MOSFETs (metal-oxide-silicon field-effect
Analytical Solutions to Quantum Drift-Diffusion Equations for Quantum Mechanical
SPICE BSIM3 Model Parameters Extraction and Optimization for Low Temperature Application
Modeling The Current-Voltage (I-V) Characteristics of The MOSFET Device With Quantum Mechanical
1 Introduction Silicon-on-insulator (SOI) technology has been of interest since the 1970's due to advantages in device isolation and speed,
Density Gradient Quantum Surface Potential Hedley Morris*, Ellis Cumberbatch*, Henok Abebe** and Darryl Yong***
Compact Models for Double Gate MOSFET with Quantum Mechanical Effects Using Lambert Function
Compact Models for Double Gate and Surround Gate MOSFETs Henok Abebe*
Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB Approximations
We present an analytical model for the impact ionization and polysilicon (poly) gate depletion effects on the I-V characteristics
SOS Gate Capacitance Modeling H. C. Morris*
Quantum mechanical (QM) effects are playing a significant role in MOSFET (metal-oxide-silicon field-effect transistor) device
The MOSFET (metal-oxide-silicon field-effect transistor) substrate current has been expected to increase dramatically due to the
Quantum Mechanical Effects Correction Models for Inversion Charge and Current-Voltage (I-V) Characteristics of the MOSFET Device
Analytical Formulae of Quantum-Mechanical Electron Density in Inversion Layer in Planar MOSFETs
SOCAMS 2004, Claremont, CA. Modeling Quantum Effects on
Compact Modeling for Double Gate and Surround Gate MOSFETs
Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS E. Cumberbatch *
Analytic formulae for the impact ionization rate for use in compact models of ultra-short semiconductor devices