- Morphology of Graphene on SiC( 1000 ) Surfaces Luxmi, P. J. Fisher, N. Srivastava, and R. M. Feenstra
- Inversion of wurtzite GaN(0001) by exposure to V. Ramachandran and R. M. Feenstra
- Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC
- GROWTH OF GaN ON POROUS SiC SUBSTRATES BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY
- Field effect in epitaxial graphene on a silicon carbide substrate Sarnoff Corporation, CN5300, Princeton, New Jersey 08543
- Tunneling Spectroscopy of Graphene and related Reconstructions on SiC(0001) Shu Nie and R. M. Feenstra*
- Surface Morphology of GaN Surfaces during Molecular Beam R. M. Feenstra, Huajie Chen, V. Ramachandran, and C. D. Lee
- GROWTH OF GaN ON POROUS SiC AND GaN SUBSTRATES C. K. Inoki and T. S. Kuan
- Wurtzite GaN Surface Structures Studied by Scanning Tunneling Microscopy and Reflection High Energy
- Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAs
- Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices
- Reconstructions of the GaN(000 ) Surface A. R. Smith,1
- Preparation of atomically flat surfaces on silicon carbide using hydrogen etching
- Scanning Tunneling Microscopy of the GaN(000 ) A. R. Smith,1
- Determination of Wurtzite GaN Lattice Polarity Based on Surface Reconstruction
- Compositional variations in strain-compensated InGaAsP/InAsP superlattices studied by scanning tunneling microscopy
- Temperature dependence of molecular beam epitaxy of GaN on SiC (0001)
- Enhanced group V intermixing in InGaAs/ InP quantum wells studied by cross-
- Tunneling spectroscopy of the Si(111)21 surface R. M. Feenstra
- Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy
- Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy
- Recent Developments in Scanning Tunneling Spectroscopy of Semiconductor Surfaces
- Silicon on GaN(0001) and (000 ) Surfaces C. D. Lee and R. M. Feenstra
- Buckling and band gap of the Ge(111)21 surface studied by low-temperature scanning tunneling microscopy
- Growth of GaN on SiC(0001) by Molecular Beam Epitaxy C. D. LEE (a), ASHUTOSH SAGAR (a), R. M. FEENSTRA
- Scanning Tunneling Potentiometry of Semiconductor Junctions Yang Dong and R. M. Feenstra
- Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)
- Morphology and Effects of Hydrogen Etching of Porous SiC Ashutosh Sagar, C. D. Lee and R. M. Feenstra
- Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity
- Low-temperature Scanning Tunneling Spectroscopy of Semiconductor Surfaces R. M. Feenstra1
- Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions
- In-situ ellipsometry: Identification of surface terminations during GaN growth , T. Schmidtling1
- Low-temperature tunneling spectroscopy of Ge(111)c( 82 ) surfaces R. M. Feenstra1
- Effects of Hydrogen on the Morphology and Electrical Properties of GaN grown by Plasma-assisted Molecular-Beam Epitaxy
- Recent Developments in Surface Studies of GaN and AlN R. M. Feenstra*
- Electronic States of Oxidized GaN(0001) Surfaces Y. Dong and R. M. Feenstra
- Electronic States of Chemically Treated SiC Surfaces Shu Nie and R. M. Feenstra
- Growth of GaN on porous SiC by molecular beam epitaxy
- Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M. Feenstra
- Temperature-dependence of Epitaxial Graphene Formation on SiC(0001) Luxmi, Shu Nie, P. J. Fisher, and R. M. Feenstra*
- Thickness monitoring of graphene on SiC using low-energy electron diffraction P. J. Fisher
- The influence of the band structure of epitaxial graphene on SiC on the transistor characteristics
- Formation of Epitaxial Graphene on SiC(0001) using Vacuum or Argon Environments Luxmi, N. Srivastava, and R. M. Feenstra
- Structure and Electronic Spectroscopy of Steps on GaAs(110) Surfaces S. Gaan and R. M. Feenstra
- Novel Contrast Mechanism in Cross-Sectional Scanning Tunneling Microscopy of GaSb/GaAs Type-II Nanostructures
- Band Gap of the Ge(111)c(28) Surface by Scanning Tunneling Spectroscopy R. M. Feenstra1
- Transport limitations in tunneling spectroscopy of Ge(111)c( 82 ) surfaces R. M. Feenstra1
- TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE
- Low-temperature scanning tunneling spectroscopy of n-type GaAs(110) surfaces R. M. Feenstra
- Atomic-scale structure and electronic properties of GaN/GaAs superlattices R.S. Goldman,a
- Influence of surface states on tunneling spectra of n-type GaAs(110) surfaces Nobuyuki Ishida,1 Kazuhisa Sueoka,1 and R. M. Feenstra2,*
- Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces Luxmi, N. Srivastava, Guowei He, and R. M. Feenstra
- InGaAs/InP quantum well intermixing studied by cross-sectional scanning tunneling microscopy
- Low Energy Electron Microscopy of Indium on Si001 Surfaces H. A. McKay and R. M. Feenstra
- Structure of Clean and Arsenic-covered GaN(0001) V. Ramachandran, C. D. Lee, and R. M. Feenstra
- Morphology and surface reconstructions of m-plane GaN C. D. Lee,1
- Distribution of Nitrogen Atoms in Dilute GaAsN and InGaAsN Alloys studied by Scanning Tunneling Microscopy
- Spontaneous Formation of Indium-rich Nanostructures on InGaN(0001) Surfaces
- Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy
- Electronic States of InAs/GaAs Quantum Dots by Scanning Tunneling Spectroscopy S. Gaan, Guowei He, and R. M. Feenstra
- GaN(0001) Surface Structures Studied Using Scanning Tunneling Microscopy and First-Principles Total Energy Calculations
- Morphology and surface reconstructions of GaN(1 1 00) surfaces C. D. Lee and R. M. Feenstra
- Comparison of Electronic and Mechanical Contrast in Scanning Tunneling Microscopy Images of
- Reconstructions of GaN and InGaN Surfaces R. M. Feenstra, Huajie Chen, and V. Ramachandran
- Scanning Tunneling Spectroscopy of Oxidized 6H-SiC Surfaces and R. M. Feenstra1, b
- Reconstructions of the AlN(0001) Surface C. D. Lee, Y. Dong and R. M. Feenstra
- Electrostatic Potential for a Hyperbolic Probe Tip near a Semiconductor R. M. Feenstra
- Co-existence of negatively and positively buckled isomers on n+ -doped Si(111)-2x1
- Reconstructions of GaN(0001) and (000 ) Surfaces: Ga-rich Metallic Structures
- Role of Ga-flux in dislocation reduction in GaN films grown on SiC(0001) C. D. Lee, Ashutosh Sagar, R. M. Feenstra
- phys. stat. sol. (c) z, No. z, zzz zzz (2004) / DOI 10.1002/pssc.200400000 1 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Size, shape, composition, and electronic properties of InAs/GaAs quantum dots by scanning tunneling microscopy and spectroscopy
- Growth of GaN on porous SiC and GaN substrates C. K. Inoki1
- Step Formation on Hydrogen-etched 6H-SiC{0001} Surfaces S. Nie, C. D. Lee
- Combined MOCVD and MBE growth of GaN on porous SiC Ashutosh Sagar (a), R. M. Feenstra (a), C. K. Inoki (b), T. S. Kuan (b), D. D. Koleske (c)
- Oxidized GaN(0001) Surfaces studied by Scanning Tunneling Microscopy and Spectroscopy and by First-Principles Theory
- Scanning Tunneling Spectroscopy of Mott-Hubbard states on the 6H-SiC(0001)33 Surface
- Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
- A Prospective: Quantitative Scanning Tunneling Spectroscopy of Semiconductor Surfaces
- Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs
- Nucleation and Stoichiometry Dependence of rutile-TiO2(001)/GaN(0001) Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy
- Influence of Tip-induced Band Bending on Tunneling Spectra of Semiconductor R. M. Feenstra and Y. Dong
- Buckling of Si and Ge (111)21 Surfaces Shu Nie and R. M. Feenstra
- Quantitative Determination of Nanoscale Electronic Properties of Semiconductor Surfaces by Scanning Tunnelling Spectroscopy
- Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
- Arrangement of Nitrogen Atoms in GaAsN Alloys determined by Scanning Tunneling Microscopy
- phys. stat. sol. (c) 0002, No. z, zzzzzz (2003) / DOI 10.1002/pssc.200300000 1 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- SCANNING TUNNELING MICROSCOPY STUDIES OF InGaN GROWTH BY MOLECULAR BEAM EPITAXY
- March 28, 2002 1.0 final draft Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
- Growth and Surface Reconstructions of AlN(0001) Films C. D. Lee1*
- Graphene formed on SiC under various environments: Comparison of Si-face and C-face
- Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions R. M. Feenstra*
- Interface Structure of Graphene on SiC( 1000 ) N. Srivastava, Guowei He, Luxmi, and R. M. Feenstra*
- Graphene on Carbon-face SiC{0001} Surfaces Formed in a Disilane Environment
- Formation of Graphene on SiC( 1000 ) Surfaces in Disilane and Neon Environments Guowei He, N. Srivastava, R. M. Feenstra*
- Charge Transfer between Isomer Domains on n+ -Doped Si(111)-21: Energetic
- Structure and Electronic Spectroscopy of Steps on GaAs(110) Surfaces S. Gaan and R. M. Feenstra
- Quantitative Determination of Nanoscale Electronic Properties of Semiconductor Surfaces by Scanning Tunnelling Spectroscopy
