- CONTINUUM MODELS FOR ELECTRICAL BREAKDOWN IN PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES1
- TEXAS TECH UNIVERSITY FISCAL YEAR 2009-2010
- COMPARISON OF Si, GaAs, SiC AND GaN FET-TYPE SWITCHES FOR PULSED POWER APPLICATIONS
- SIMULATION OF CURRENT FILAMENTS IN PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES*
- Physica B 401402 (2007) 695698 Rattling ``guest'' impurities in Si and Ge clathrate semiconductors
- Large supercell molecular dynamics study of defect formation in hydrogenated amorphous silicon
- [Revised and posted 4/10/07] Operating Policy and Procedure
- First-principles calculations of the vibrational and thermal properties of the type-I clathrates Ba8Ga16SixGe30-x and Sr8Ga16SixGe30-x
- INTRODUCTION Developing materials which meet given specifications is a difficult process. For
- Theoretical Evaluation of the Thermal Conductivity in Framework (Clathrate) Semiconductors
- Designated Internat'l
- Electronic and vibrational properties of framework-substituted type-II silicon clathrates Koushik Biswas and Charles W. Myles
- IOP PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 20 (2008) 415214 (5pp) doi:10.1088/0953-8984/20/41/415214
- IOP PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 19 (2007) 466206 (10pp) doi:10.1088/0953-8984/19/46/466206
- Electronic structure of the Na16Rb8Si136 and K16Rb8Si136 clathrates Koushik Biswas* and Charles W. Myles
- First principles calculations of the structural and electronic properties of the type-I semiconductor clathrate alloys Ba8Ga16SixGe30-x and Sr8Ga16SixGe30-x
- Deep levels including lattice relaxation: rst-and second-neighbor effects
- pubs.acs.org/IC Published on Web 05/26/2010 r 2010 American Chemical Society 5338 Inorg. Chem. 2010, 49, 53385340
- phys. stat. sol. (b) 239, No. 1, 2634 (2003) / DOI 10.1002/pssb.200303236 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Vibrational properties of tin clathrate materials Charles W. Myles,1
- A theory of low-field, high-carrier-density breakdown in semiconductors
- Supporting Information Framework Contraction in Na-stuffed Si(cF136)
- phys. stat. sol. (a) 181, 219 (2000) Subject classification: 71.55.Eq; 73.40.Kp; 79.20.Fv; S5.11; S7.11; S7.12
- Structural and electronic properties of tin clathrate materials Charles W. Myles
- GALLIUM ARSENIDE AND SILICON FET-TYPE SWITCHES FOR REPETITIVE PULSED POWER APPLICATIONS*
- Raman scattering study of stoichiometric Si and Ge type II clathrates G. S. Nolasa)
- Theory of optically-triggered electrical breakdown of semiconductors Kenneth E. Kambour1
- TEXAS TECH UNIVERSITY FISCAL YEAR 2008-2009
- Thermal properties of guest-free Si136 and Ge136 clathrates: A first-principles study
- SIMULATIONS OF A HIGH POWER 4H-SiC VJFET AND ITS GaAs COUNTERPART
- VOLUME 86, NUMBER 11 P H Y S I C A L R E V I E W L E T T E R S 12 MARCH 2001 Theoretical Study of the Lattice Thermal Conductivity in Ge Framework Semiconductors
