
- Transparent conducting indium bismuth oxide M. Karimi a
- Epitaxial Fe/GaAs via electrochemistry Zhi Liang Bao and Karen L. Kavanagha
- Residual Stress, Defects, and Electrical Properties of Epitaxial Copper Growth on GaAs
- Epitaxial Bi/GaAs diodes via electrodeposition Zhi Liang Bao and Karen L. Kavanagha
- Erratum: "Time dependent ballistic electron emission microscopy studies of a Au/(lOO)GaAs interface with a native oxide diffusion barrier"
- Structural and magnetic properties of NiMnSb/InGaAs/InP,,001... A. Koveshnikov, G. Woltersdorf, J. Q. Liu, B. Kardasz, O. Mosendz, B. Heinrich, and
- Ballistic electron and photocurrent transport in Au-molecular layer-GaAs diodes
- Effects of capillary forces on copper/dielectric interfacial void evolution Jun-Ho Choya)
- Abstract ZnSe nanostructures were grown on Si substrates by Au catalyzed vapor phase growth at
- 1. "Misfit dislocations in nanowire heterostructures", K. L. Kavanagh, Semiconductor Science and Technology 25, 2 (2010).
- Nanoscale Electrical and Structural Characterization of Gold/Alkyl Monolayer/Silicon Diode Junctions
- Ballistic Electron Emission Microscopy Studies of Au/Molecule/n-GaAs Diodes Wenjie Li, Karen L. Kavanagh,*, Carolyn M. Matzke, A. Alec Talin, Francois Leonard,
- Au/Ag and Au/Pd molecular contacts to GaAs Azadeh Ahktari-Zavareh, Wenjie Li, and Karen L. Kavanagha
- Epitaxial FexNi1-x Thin Film Contacts to GaAs via Electrochemistry
- Epitaxial Bi/GaAs,,111... diodes via electrodeposition Zhi Liang Bao and Karen L. Kavanagh
- Journal of Crystal Growth 287 (2006) 514517 Aligned Co nanodiscs by electrodeposition on GaAs
- INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol. 22 (2007) 175178 doi:10.1088/0268-1242/22/3/001
- Growth, branching, and kinking of molecular-beam epitaxial S110< GaAs Z. H. Wu, X. Mei, D. Kim, M. Blumin, and H. E. Rudaa)
- Effect of Bi surfactant on atomic ordering of GaAsSb W. Y. Jiang, J. Q. Liu, M. G. So,a)
- Atomic interface structure-property investigations
- Anisotropic structural, electronic, and optical properties of InGaAs grown by molecular beam epitaxy on misoriented substrates
- Journal of Crystal Growth 201/202 (1999) 419}422 E!ects of rapid thermal annealing on GaInNAs/GaAs
- 1. K. L. Kavanagh, Semiconductor Science and Technology 25, 2 (2010). 2. T. Cheung, K. L. Kavanagh, and U. Ribary, A New Technique for Magnetic Nanoparticle