- High quantum efficiency photoluminescence from localized excitons in Si, -,Ge,
- Noninvasive measurement of charging in plasmas using microelectromechanical charge sensing devices
- 69Fabrication and characterization of n-MODFETs5. i -Si0.62Ge 0.38 '"'.1 l,urn (relaxed)
- Field-effect mobility of amorphous silicon thin-film transistors under strain
- 304 JOURNAL OF DISPLAY TECHNOLOGY, VOL. 3, NO. 3, SEPTEMBER 2007 Amorphous Silicon Thin-Film Transistor Backplanes
- Photoluminescence from electron-hole plasmas confined in Si/Si 1-,Ge,/Si quantum wells
- Tilted Brownian Ratchet for DNA Analysis Lotien Richard Huang, Edward C. Cox, Robert H. Austin,*, and James C. Sturm
- SiGe quantum dot single-hole transistor fabricated by atomic force microscope nanolithography and silicon epitaxial-regrowth
- To be published in IEEE ELECTRON DEVICE LETTERS, January 2008 Reliability of Active-Matrix Organic
- Temperature control of silicon-germanium alloy epitaxial growth on silicon substrates by infrared transmission
- IEEE ELECTRON DEVICE LETTERS, VOL. 27, NO. 2, FEBRUARY 2006 111 Stability of Amorphous-Silicon TFTs Deposited on
- Bu-PPyV:PVK (wt.) Excitation = 420 nm
- PATTERNING TECHNIQUES FOR POLYMER LIGHT-EMITTING DEVICES
- Segregation of boron to polycrystalline and single-crystal Si1xyGexCy and Si1yCy layers
- III International Conference on SiGe(C) Epitaxy and Heterostructures, NM, Mar. 2003 SiGe Single-Hole Transistor Fabricated by AFM Oxidation and Epitaxial Regrowth
- 36 IEEE ELECTRON DEVICE LETTERS, VOL. 32, NO. 1, JANUARY 2011 Self-Aligned Top-Gate Coplanar a-Si:H Thin-Film
- INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol. 22 (2007) S158S160 doi:10.1088/0268-1242/22/1/S37
- TOWARDS FLEXIBLE FULL-COLOR ACTIVE MATRIX ORGANIC LIGHT-EMITTING DISPLAYS
- Fully-depleted Strained-Si on Insulator NMOSFETs without Relaxed SiGe Buffers
- Anomalous Temperature Dependence of Solvent-Enhanced Dye Diffusion In Polymer T. Graves-Abe, F. Pschenitzka, J.C. Sturm
- 2.53.03.54.04.55.05.56.0 1000/T(K-l)
- Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1 x yGexCy alloy layers on Si (100)
- Thin-film transistor circuits on large-area spherical surfaces P. I. Hsu, R. Bhattacharya, H. Gleskova, M. Huang, Z. Xi, Z. Suo, S. Wagner, and
- Microfluidic Devices for Cell David Inglis
- Microfluidic Separation of Blood Components through Deterministic Lateral Displacement
- Properties and Applications of Crystalline Si1-x-yGexCy alloys Chia-Lin Chang
- The Interaction of Silicon Self-Interstitials and Substitutional Carbon in Silicon Based Heterostructures
- Hydrogen-Plasma-Enhanced Crystallization of Hydrogenated
- Silicon Epitaxial Regrowth Passivation of SiGe Nanostructures Pattered by AFM Xiang-Zheng Bo, Leonid P. Rokhinson, and J. C. Sturm
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 10, OCTOBER 2010 2381 Self-Aligned Amorphous Silicon Thin-Film
- Growth and Study of Si/SiGe Multiple Quantum Wells for Mid-infrared Applications
- Novel Amorphous-Si AMOLED Pixels with OLED-independent Turn-on Voltage and Driving Current
- Comment on "Fabrication of strained silicon on insulator by strain transfer process" Appl. Phys. Lett. 87, 051921 ,,2005...
- 65Chapter 3 -MOS-GatedHigh HoleMobility Transistors Figure3.11 Simulated threshold voltage shift vs germanium fraction compared to a silicon
- Microfluidic Devices for Genomic Analysis
- Silicon And Silicon-germanium Epitaxy For Quantum Dot Device Fabrications
- Local tuning of organic light-emitting diode color by dye droplet application
- Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition
- Alloy scattering limited transport of two-dimensional carriers in strained Si, -,Ge, quantum wells
- PHYSICS AND APPLICATIONS OF V. Venkataraman
- performance comparableto devicesusing reactiveMg:Ag alloys. References
- Critical particle size for fractionation by deterministic lateral displacement David W. Inglis,*a
- Nanocrystalline Silicon Thin Film Transistors on Optically Clear Polymer Foil Substrates Alex Kattamis, I-Chun Cheng, Ke Long, James C. Sturm, Sigurd Wagner
- Chemical Vapor Deposition Epitaxy of Silicon and Silicon-Carbon Alloys at High Rates and Low Temperatures using Neopentasilane
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 52, NO. 10, OCTOBER 2005 2207 Ultrathin Strained-SOI by Stress Balance on
- INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 13 (2001) 48914902 www.iop.org/Journals/cm PII: S0953-8984(01)22518-1
- Quantum confinement effects in strained silicon-germanium alloy quantum wells
- Enhancement of high-temperature photoluminescence in strained Si1 xGex/Si heterostructures by surface passivation
- Erratum: ``Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1 x yGexCy alloy layers on Si (100)''
- Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized
- High electron mobility polycrystalline silicon thin-film transistors on steel foil substrates
- Improvement of output coupling efficiency of organic light-emitting diodes by backside substrate modification
- Statistical Copolymers with Side-Chain Hole and Electron Transport Groups for Single-Layer
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 47, NO. 8, AUGUST 2000 1599 Thin-Film Transistors in Polycrystalline Silicon
- External coupling efficiency in planar organic light-emitting devices and J. C. Sturm
- letters to nature NATURE |VOL 414 |15 NOVEMBER 2001 |www.nature.com 289
- DOI: 10.1007/s003390201336 Appl. Phys. A 75, 279284 (2002)
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 11, NOVEMBER 2002 1993 Complementary MetalOxideSemiconductor
- Diffusion and clustering of supersaturated carbon in SiGeC layers under oxidation
- Spatially selective single-grain silicon films induced by hydrogen plasma seeding
- Buckling suppression of SiGe islands on compliant substrates Haizhou Yina)
- Solvent-enhanced dye diffusion in polymer thin films for polymer light-emitting diode application
- Self-Aligned, Insulating-Layer Structure for Integrated Fabrication of Organic
- Programmable organic thin-film devices with extremely high current Troy Graves-Abea
- 166 IEEE ELECTRON DEVICE LETTERS, VOL. 27, NO. 3, MARCH 2006 Self-Aligned Amorphous-Silicon TFTs
- Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova*
- Amorphous-silicon thin-film transistors made at 280C on clear-plastic substrates by interfacial stress engineering
- IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 7, JULY 2008 737 Top-Gate Amorphous Silicon TFT With Self-Aligned
- Silicon surface passivation by an organic overlayer of 9,10-phenanthrenequinone
- Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication
- 4.2: Design of an Improved Pixel for a Polysilicon Active Matrix Organic Light Emitting Diode Display
- The Impact of the Transient Response of 0rg;anic Light Emitting Diodes on the Design of Active Matrix OLED Displays
- A Polysilicon Active Matrix Organic Light Emitting Diode Display with Integrated Drivers R.M.A. Dawson, Z. Shen, D.A. Furst, S. Connor, J. Hsu, M.G. Kane, R.G. Stewart, A. Ipri
- p Channel thin lm transistor and complementary metaloxidesilicon inverter made of microcrystalline silicon
- Carbon Diffusion and Clustering in SiGeC Layers Under Thermal Oxidation D. De Salvador1
- Boron Segregation and Electrical Properties in Polycrystalline SiGeC E. J. Stewart, M. S. Carroll*, and J.C. Sturm
- Three-Color Passive-Matrix Pixels Using Dye-Diffusion-Patterned Tri-Layer Polymer-Based LED
- Large-Grain Polysilicon Films with Low Intragranular Defect Density by Low-Temperature Solid-Phase Crystallization
- Relaxed SiGe Layers with High Ge Content by Compliant Substrates , R.L. Peterson1
- Active Matrix OLED Using 150o C a-Si TFT Backplane Built on
- Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures K. Long, A. Kattamis, I.-C. Cheng, H. Gleskova, S. Wagner, and J. C. Sturm
- Large-Area Wet Micro-Printing (LAMP) for Organic Device Patterning Hongzheng Jin1,2
- The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications
- Nanopatterning of Si/SiGe Two-dimensional Hole Gases by PFOTS-aided AFM Lithography of Carrier Supply Layer
- Microfluidic high gradient magnetic cell separation David W. Inglisa
- Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD
- High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh
- Amorphous Silicon: The other Silicon J.C. Sturm, Y. Huang, L. Han, T. Liu, *B. Hekmatshoar,
- Hardware Instructions -Turn on water, verify that the pressure is 5.5 GPM for the laser.
- Chapter 5: PhotoluminescenceStudiesof Strained Si1-xGex Quantum Wells 66 ....I ...... ....I . . . .
- 4. Growth and Photoluminescence of Strained SiGe on < 110> Si 58 (a~___Al./'"
- A DISSERTATION ~ENTED TO1HEFACULTY
- ADVANCED SILICON-BASED MATERIALS AND DEVICES USING
- Boron Segregation in Si1-x-yGexCy and Si1-yCy Alloys and Application to P-Channel MOSFETs
- 0 2 0 0 4 0 0 6 0 0 8 0 0 C o n d u c t i o n B a n d
- HIGHLY STABLE AMORPHOUS SILICON THIN FILM TRANSISTORS AND INTEGRATION
- Growth and band gap of strained (110) Si, ,&e, layers on silicon substrates by chemical vapor deposition
- Integrated three-color organic light-emitting devices C. C. Wu, J. C. Sturm,a)
- Low temperature chemical vapor deposition growth of -SiC on (100) Si using methylsilane and device characteristics
- Calculation of band alignments and quantum confinement effects in zero-and one-dimensional pseudomorphic structures
- IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 4, NO. 1, JANUARY/FEBRUARY 1998 75 Thermal Effects and Scaling in Organic
- Direct optical measurement of the valence band offset of p Si1 x yGexCy /p Si,,100... by heterojunction internal photoemission
- Three-color organic light-emitting diodes patterned by masked dye Florian Pschenitzka and J. C. Sturma)
- 4652 Journal of The Electrochemical Society, 147 (12) 4652-4659 (2000) S0013-4651(00)03-083-4 CCC: $7.00 The Electrochemical Society, Inc.
- Excitation mechanisms in dye-doped organic light-emitting devices F. Pschenitzkaa)
- Role of Molecular Size in Ratchet Fractionation Lotien Richard Huang,1
- Nanopatterning of SiSiGe electrical devices by atomic force microscopy Xiang-Zheng Bo,a)
- Bacterial chromosome extraction and isolation Christelle Prinz,a Jonas O. Tegenfeldt,a Robert H. Austin,a Edward C. Coxb and James
- Amorphous Si TFTs on plastically deformed spherical domes P.I. Hsu *, H. Gleskova, M. Huang, Z. Suo, S. Wagner, J.C. Sturm
- International Journal of High Speed Electronics and Systems, Vol. 12, No.2 (2002) 391-399 @ World Scientific Publishing Company
- Continuous microfluidic immunomagnetic cell separation David W. Inglisa)
- INSTITUTE OF PHYSICS PUBLISHING NANOTECHNOLOGY Nanotechnology 16 (2005) 19931999 doi:10.1088/0957-4484/16/10/003
- 2250 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 9, SEPTEMBER 2006 Full-Color OLEDs Integrated by Dry Dye Printing
- 1004 IEEE ELECTRON DEVICE LETTERS, VOL. 28, NO. 11, NOVEMBER 2007 Amorphous-Silicon Thin-Film Transistors
- Author's personal copy Research paper
- A novel TFT-OLED integration for OLED-independent pixel programming in amorphous-Si AMOLED pixels
- Highly stable amorphous-silicon thin-film transistors on clear plastic Bahman Hekmatshoar,a
- Tradeoff regimes of lifetime in amorphous silicon thin-film transistors and a universal lifetime comparison framework
- A microfluidic device for continuous cancer cell culture and passage with hydrodynamic forces
- IIA-2 A Novel Double Base Heterojunction Bipolar Transistor for Low Temperature Bipolar Logic
- Patterning Approaches and SystemPower Efficiency Considerations for Organic LED Displays
- DOPED ORGANIC LIGHT -EMITTING DIODES BASED ON RANDOM COPOLYMERS CONTAINING BOTH HOLE
- Quantitative Measurement of Interstitial Flux and Surface Super-saturation during Oxidation of Silicon
- Mat. Res. Soc. Symp. Proc. Vol. 621 2000 Materials Research Society Experiment and Modeling of Conversion of Substrate-Waveguided
- Relaxation Dynamics and Electrical Properties of SiGe Islands on BPSG Haizhou Yin, J. C. Sturm, and K.D. Hobart*
- Solvent-enhanced Dye Diffusion in Polymer This-Films for OLED Application F. Pschenitzka, K. Long, and J. C. Sturm
- Flexible display enabling technology Sigurd Wagnera*
- Device Research Conference, June 2003 SiGe Single-Hole Transistor Fabricated by AFM Oxidation and Epitaxial Regrowth
- Island Scaling Effects on Photoluminescence of Strained SiGe/Si (100) Rebecca L. Peterson, Haizhou Yin and J. C. Sturm
- Uniaxially-tensile strained ultra-thin silicon-on-insulator with up to 1.0% strain R.L. Peterson1
- High Perfection Approaches to Si-based Devices through Strained Layer Epitaxy J.C. Sturm1
- DEFORMABLE ELECTRONIC SURFACES J.C. STURM, *P.I HSU, H. GLESKOVA, R. BHATTACHARYA, AND S. WAGNER
- Programmable Conductance Switching and Negative Differential Resistance in Nanoscale Organic Films
- Dynamics of uniform Si/SiGe uniaxial strain generation on compliant insulating substrates
- Chlorine Etching For In-Situ Low-Temperature Silicon Surface Cleaning For Epitaxy Applications
- Chemical Vapor Deposition Epitaxy of Silicon-based Materials using Neopentasilane
- 9:30 AM *G13.4 The Quest for the TFT Fountain of Youth. James Sturm, B.
- The Proceedings of the 5th International TFT Conference Enabling Mechanisms for a-Si TFT's with 100-year Lifetimes
- 40.2 / H. Jin 40.2: Super-High Resolution Transfer Printing
- 65.1 / J. C. Sturm 65.1: Invited Paper: Amorphous Silicon TFT's with 100-year Lifetimes
- Anode Cathode work function
- Strain Relaxation of SiGe on Compliant BPSG and Its Applications
- Novel Patterning Methods for Full-Color Polymer Light-Emitting
- Profile Optimization for Wet-Printed Polymer Films
- AMOLED Reliability with a-Si TFT's in Normal vs. Inverted TFT/OLED Integration Scheme Bahman Hekmatshoar, Kunigunde Cherenack, Ke Long, Alex Kattamis, Sigurd Wagner and James C. Sturm
- The dynamics of genomic-length DNA molecules in 100-nm channels
- Silicon Interstitial Driven Loss of Substitutional Carbon from SiGeC Structures M. S. Carroll and J. C. Sturm, Dept. of Electrical Engineering, Princeton University, Princeton,
- Co silicide formation on SiGeC/Si and SiGe/Si layers R. A. Donatona)
- Appl. Phys. A 75, 667672 (2002) / Digital Object Identifier (DOI) 10.1007/s003390201291 Applied Physics A
- Tunable, long-wavelength PtSi/SiGe/Si Schottky diode infrared detectors J. R. Jimeneza)
- Molecular-scale Organic Electronic Devices for Integrated Nonvolatile Memory Application
- Stress control for overlay registration in a-Si:H TFTs on flexible organic-polymer-foil I-Chun Cheng
- Electron Injection Mechanism in Top-gate Amorphous Silicon Thin-film Transistors with Self-Aligned Silicide Source and Drain
- Spherical deformation of compliant substrates with semiconductor device islands
- Quantitative measurement of the surface silicon interstitial boundary condition and silicon interstitial injection into silicon during oxidation
- High Growth Rate of Epitaxial Silicon-Carbon Alloys by High-Order Silane Precursor and Chemical Vapor Deposition
- Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon
- Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic
- Boron segregation and electrical properties in polycrystalline Si1xyGexCy and Si1yCy alloys
- 6.5. Early Voltage Degradation by Base Dopant Outdiffusion 99 Figure6.14: Measuredbasecurrent of device#636 at room temperaturefor a constant
- A DISSERTATION PRESENTED TO THE FACULTY
- Ultrahigh growth rate of epitaxial silicon by chemical vapor deposition at low temperature with neopentasilane
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 4, APRIL 2001 707 Integrated Amorphous and Polycrystalline Silicon
- Diffusion enhanced carbon loss from SiGeC layers due to oxidation M. S. Carroll*
- 6. Optical and Electrical Properties of Si1-z_1/GeZC1/ 70 rcl=o%[C]=O%
- The effect of carbon on the valence band offset of compressively strained Si1 x yGexCy/(100) Si heterojunctions
- 4. Tunneling Current in p+ -n+ Junctions 64 the exponential factor in equation 4.2, where factors other than Et do not contribute
- IEEE ELECTRON DEVICE LETTERS, VOL. 27, NO. 1, JANUARY 2006 49 High Mobility Nanocrystalline Silicon Transistors on
- Interference-enhanced Raman Scattering in Strain Characterization of Ultra-thin Strained SiGe and Si Films on Insulator
- Single-molecule studies of repressorDNA interactions show long-range interactions
- Base Doping Effects and Design of Si/SiGe/Si
- Hydrogen plasma enhanced crystallization of hydrogenated amorphous silicon films
- Static active-matrix OLED display without pixel refresh enabled by amorphous-silicon non-volatile memory
- Schottky barrier heights of Pt and lr silicides formed on Si/SiGe measured by internal photoemission
- Chapter6: Solidphasecrystallization:Techniquesto realizesilicon-on-insulatorstructures 170 boundary surface area is reduced. This lowers the energy of the film through
- Gate Depleted Gate Depleted
- Boron Segregation in Single-Crystal Si1-x-yGexCy and Si1-yCy E. J. Stewart,a,b,z
- High-performance polysilicon thin lm transistors on steel Ming Wu *, Yu Chen, Kiran Pangal, James C. Sturm, Sigurd Wagner
- Self-aligned Amorphous Silicon Thin Film Transistors with Mobility above 1 cm2 fabricated at 300o
- 574 IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 12, DECEMBER 2001 Suppression of Boron Penetration in P-Channel
- Quantification of substitutional carbon loss from Si0.998C0.002 due to silicon self-interstitial injection during oxidation
- Thermal stability of Si/Si1 x yGexCy /Si quantum wells grown by rapid thermal chemical vapor deposition
- Short Channel Amorphous-Silicon TFT's on High-Temperature Clear Plastic Substrates
- Journal of the Korean Physical Society, Vol. 54, No. 1, January 2009, pp. 415$420 Amorphous Silicon Thin-Film Transistors made on Clear Plastic at 300 C
- High-germanium-content SiGe islands formed on compliant oxide by SiGe Haizhou Yina)
- APPLIED PHY~I(c~ LETTRR~ VOLUME 82. NUMBER 22 2 JUNE 2003 Strain partition of Si/SiGe and SiO2/SiGe on compliant substrates
- Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells
- BIPOLAR TRANSISTORS Erwin Jasef Prinz
- Chapter 4: Active Matrix OLED Arrays with a-Si:H TFT backplanes ... Fig. 4.3. Schematic cross-section of a 2-TFT AMOLED pixel fabricated in this work.
- Mat. Res. Soc. Symp. Proc. Vol. 621 2000 Materials Research Society Plastic Deformation of Thin Foil Substrates with Amorphous Silicon Islands into Spherical
- Epitaxial Growth of Si1-yCy Alloys 5.1 Introduction
- Effect of carbazoleoxadiazole excited-state complexes on the efficiency of dye-doped light-emitting diodes
- Cheewee Liu A DISSERTATION
- Every organism contains, within its regu-latory system, self-sustaining pacemaker cir-
- Symmetric Si/Si, --xGe, electron resonant tunneling diodes with an anomalous temperature behavior
- IEEE ELECTRON DEVICE LETTERS, VOL. 20, NO. 6, JUNE 1999 301 25-nm p-Channel Vertical MOSFET's
- DLD for Size Profiling of Smaller Blood Cells
- SILICON-BASED EPITAXY BY CHEMICAL VAPOR DEPOSITION USING NOVEL PRECURSOR
- THREE-DIMENSIONAL ELECTRONIC SURFACES
- Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates
- Crystal-direction dependence of uniaxial tensile strain in ultra-thin SOI R.L. Peterson1,3
- Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation
- Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates
- Peter Michael Garone A Dissertation
- Reduced buckling in one dimension versus two dimensions of a compressively strained film on a compliant substrate
- Amorphous Silicon Thin-Film Transistors with DC Saturation Current Half-Life of More than 100 Years
- Chapter3:Enhancementofcrystallizationofhydrogenatedamorphoussiliconbya 71 hydrogenplasmatreatment
- Super-high-resolution transfer printing for full-color OLED display patterning Hongzheng Jin (SID Student Member)
- Growth and Photoluminescence of Fleterostructures
- Characterization of Si/Si 1-,Ge,/Si quantum wells by cathodoluminescence imaging and spectroscopy
- A Nanofluidic Railroad Switch for DNA Robert Riehn,*,,, Robert H. Austin, and James C. Sturm
- Poly(p-phenylene vinylene)/tris(8-hydroxy) quinoline aluminum heterostructure light emitting diode
- Managing mechanical stress in flexible active-matrix backplanes Sigurd Wagner, I-Chun Cheng, Ke Long, Alexis Kattamis, and James C. Sturm
- Analytical Model of Apparent Threshold Voltage Lowering Induced by Contact Resistance in Amorphous Silicon Thin Film Transistors
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 51, NO. 3, MARCH 2004 371 Effects of Mechanical Strain on TFTs
- Optimization of external coupling and light emission in organic light-emitting devices: modeling and experiment
- Thermal Stability and Substitutional Carbon Incorporation far above Solid-Solubility in Si1-xCx and Si1-x-yGexCy Layers Grown by Chemical Vapor Deposition
- Technical Digest of International Electron Devices Meeting 2001 pp. 363-366 Generation of Large-area Tunable Uniform Electric Fields in Microfluidic Arrays for
- 56 IEEE ELECTRON DEVICE LETTERS, VOL. 13, NO. I , JANUARY 1992 Hole Mobility Enhancement in MOS-Gated
- The Proceedings of the 5th International TFT Conference Self-alignment techniques for fabricating
- The anti-lotus leaf effect in nanohydrodynamic bump arrays This article has been downloaded from IOPscience. Please scroll down to see the full text article.
- We present an approach for silicon (100) surface passivation using the organic small molecule, 1-10
- Ink-jet printing of doped polymers for organic light emitting devices T. R. Hebner, C. C. Wu, D. Marcy, M. H. Lu, and J. C. Sturm
- Boron Diffusion and Silicon Self-Interstitial Recycling between SiGeC layers M. S. Carroll1
- Strained Silicon Two-dimensional Electron Gases On Commercially Available Si1-xGex Relaxed Graded Buffers
- IEEE ELECTRON DEVICE LETTERS, VOL. 18, NO. 12, DECEMBER 1997 609 Integration of Organic LED's and
- Symrnetrlc Si/Si 1-,Ge, two-dimensional hole gases grown by rapid thermal chemical vapor deposition
- Solvent-enhanced dye diffusion in polymer thin films for color tuning of organic light-emitting diodes
- Low-and high-field transport properties of modulation-doped SiSiGe and GeSiGe heterostructures: Effect of phonon confinement in germanium quantum wells
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 8, AUGUST 2006 1789 Active-Matrix Amorphous-Silicon TFT Arrays at
- SiNx barrier layers deposited at 250o C on a clear polymer substrate
- Amorphous Silicon Thin-Film Transistors with Low-Stress Silicon Nitride for Flexible Display
- Amorphous silicon TFT based non-volatile memory Memory devices based on amorphous Silicon (a-Si) thin film transistors (TFTs) have the
- 2924 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO. 9, SEPTEMBER 2011 Nonvolatile Amorphous-Silicon Thin-Film-Transistor
- Crystalline-Silicon/Organic Heterojunctions for Solar
- Traveling wave-induced aerodynamic propulsive forces using piezoelectrically deformed substrates
- Silicon/Organic Heterojunction to Block Minority Carriers
- Microfluidic Devices for High Throughput Cell Sorting and Chemical
