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- International Journal of High Speed Electronics and Systems Vol. 16, No 2 (2006) pp. 411-420
- IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 37, NO. 7, JULY 2001 905 Tunneling-Injection Quantum-Dot Laser
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- Radiation efficiency of heavily doped bulk n-InP semiconductor Oleg Semyonov, Arsen Subashiev, Zhichao Chen, and Serge Luryi
- Appendix R PATENT RULES CHAPTER I --
- Journal of Crystal Growth 272 (2004) 711718 Effect of growth interruption on surface recombination
- Piezoacoustic modulation of gain and distributed feedback for quantum cascade lasers with widely tunable emission wavelength
- Switching device based on the quantum Hall effect R. F. Kazarinov
- Future Trends in Microelectronics. Edited by Serge Luryi, Jimmy Xu, and Alex Zaslavsky 101 ISBN 0-471-48405-8 2004 John Wiley & Sons. Inc.
- Future Trends in Microelectronics (FTM-2006) Workshop, Crete, June 26-30: Financial information for invited participant: _______________________________________
- International Journal of High Speed Electronics and Systems Vol. 18, No. 4 (2008) 973982
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- Fluctuations of the partial filling factors in competitive random sequential adsorption from binary mixtures
- Physica E 5 (2000) 196199 www.elsevier.nl/locate/physe
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- Reduction of interfacial recombination in GaInAsSbGaSb double heterostructures
- Light emitting charge injection transistor with p-type collector Marco Mastrapasqua, Federico Capasso, Serge Luryi, Albert L. Hutchinson,
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- Photovoltaic transistors based on a steady-state internal polarization effect in asymmetric semiconductor superlattices
- Future Trends in Microelectronics: From Nanophotonics to Sensors to Energy 331 Edited by Serge Luryi, Jimmy Xu, and Alex Zaslavsky
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- Influence of complex phonon spectra on intersubband optical gain Mikhail V. Kisin and Vera B. Gorfinkel
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- Nonclassical devices in SOI: Genuine or copyright from IIIV S. Luryi a,*, A. Zaslavsky b
- Carrier dynamics and photodetection in charge injection transistors Michael Y. Frankel
- Temperature-insensitive semiconductor quantum dot laser Levon V. Asryan a,b,*, Serge Luryi a
- List of Patents and Publications Serge Luryi
- Epitaxial InGaAsP/InP photodiode for registration of InP scintillation S. Luryi a,n
- Semiconductor gamma radiation detectors: band structure effects in energy resolution
- Treating the case of incurable hysteresis in VO2 M. Gurvitcha,b
- IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 9, NO. 5, SEPTEMBER 2010 647 Nonhysteretic Phenomena in the Metal
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- Nonhysteretic behavior inside the hysteresis loop of VO2 and its possible application in infrared imaging
- arXiv:0903.0007v1[physics.optics]27Feb2009 Transmission properties of optical adhesives and bonding layers
- 369 Future Trends in Microelectronics. Edited by Serge Luryi, Jimmy Xu and Alex Zaslavsky 2007 John Wile & Sons, Inc.
- 68 Future Trends in Microelectronics. Edited by Serge Luryi, Jimmy Xu and Alex Zaslavsky 2007 John Wile & Sons, Inc.
- IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 12, DECEMBER 2006 2879 Quaternary InGaAsSb Thermophotovoltaic Diodes
- Nuclear Instruments and Methods in Physics Research A 565 (2006) 650656 Semiconductor high-energy radiation scintillation detector
- Waveguides with uniaxially patterned layers Serge Luryia and Arsen V. Subashieva,b
- Widely tunable type-II interband cascade laser Sergey Suchalkin, Mikhail V. Kisin, Serge Luryi, and Gregory Belenkya
- Analysis of the temperature performance of type-II interband cascade lasers
- IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 40, NO. 7, JULY 2004 833 Effect of Internal Optical Loss on Threshold
- Lateral interband tunneling transistor in silicon-on-insulator and A. Zaslavsky
- Two lasing thresholds in semiconductor lasers with a quantum-confined active region
- Olga Bilenko2 Dmitri Gavrilov1
- Intrinsic nonlinearity of the lightcurrent characteristic of semiconductor lasers with a quantum-confined active region
- Optical gain and loss in 3 m diode ``W'' quantum-well lasers Sergey Suchalkin,a)
- "Future Trends in Microelectronics: the Nano Millennium", pp. 219-230 edited by S. Luryi, J.M. Xu and A. Zaslavsky (Wiley, 2002)
- Parallel Processor Configuration Design with Processing/Transmission Costs
- ON FUTURE ORGANIZATION OF HYBRID CHIP MANUFACTURING EUGENE A. FEINBERG
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- Electronplasmon relaxation in quantum wells with inverted subband Mikhail V. Kisin
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- A method for Fermi energy measurements A. Tsukernik,a)
- Effects of interface phonon scattering in three-interface heterostructures Mikhail V. Kisin
- Hot electrons and curves of constant gain in long wavelength quantum well lasers
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- 8.4 Quantum Well Tunneling Devices S. Luryi and A. Zaslavsky
- S. Luryi et al. (eds.), Future Trends in Microelectronics, 365-370. 1996 Kluwer Academic Publishers. Printed in the Netherlands.
- Theory of the spectral line shape and gain in quantum wells with intersubband transitions
- TransistorsBipolarHeterostructureofOperationUltrafast CarriersMinorityofTransportBaseCoherentfromResulting
- Microwave Studies of Self-Aligned Top-Collector Charge Injection Transistors
- Heterostructure bipolar transistor with enhanced forward diffusion of minority carriers
- High-frequency modulation and suppression of chirp in semiconductor Vera B. Gorfinkel
- Multi-Terminal Light Emitting Logic Device Electrically Reprogrammable between OR and NAND Functions
- NJSomersetSymposium,SPIE-92DevicesOptoelectronicofSimulationandPhysicsPaperInvited TRANSISTORSINJECTIONCHARGEINSTATESCOLLECTOR-CONTROLLED
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- NSF/DNDO 3D Pixellated Semiconductor Scintillator Serge Luryi, PI Project Description
- Future Trends in Microelectronics Workshop, Corsica, June 2327, 2003: Financial information for invited participant: ___ ______________________________
- Future Trends in Microelectronics Workshop, Ile de Bendor, June 25-29, 2001: Financial information for invited participant: ___ _____
- MultiTerminal Reprogrammable
- Future Trends in Microelectronics Workshop, Ile des Embiez, June 15, 1998: Financial information for participant
- Ballistic versus diffusive base transport in the high-frequency characteristics of bipolar transistors
- S. Luryi et al. (eds), Future Trends in Microelectronics, 385-389. 1996 Kluwer Academic Publishers. Printed in the Netherlands.
- Light-emitting devices based on the real-space transfer of hot electrons Serge Lutyi
- Dual Modulation of SemiconductorLasers Vera B. Gorfinkeloand SergeLt.,n'
- *Corresponding author. Fax: #1-919-549-4348; e-mail: stroscio@aro-emh1.army.mil.
- Automatic generation of RF compact models from device simulation S. Luryi and A. Pacelli
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- Electrochemical Society Proceedings Volume 2003-05 175 REAL SPACE TRANSFER DEVICES IN SOI
- MECHANISM OF OPERATION OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS Serge Luryi
- Measurement of the effective temperature of majority carriers under injection of hot minority carriers in heterostructures
- Blue sky in SOI: new opportunities for quantum and hot-electron devices
- Optoelectronic TRANSISTORS
- Eur. Phys. J. B 23, 341344 (2001) THE EUROPEAN
- IEEE TRANSACTIONS ON PARALLEL AND DISTRIBUTED SYSTEMS, VOL. 9, NO. 3, MARCH 1998 225 Optimizing Computing Costs
- Future Trends in Microelectronics (FTM-2009) Workshop, Sardinia, June 14-19: Financial information for invited participant: ______________________________________
- VO2 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process
- Low-Power Amplifier for Readout Interface of Semiconductor Scintillator
- Future Trends in Microelectronics (FTM-2012) Workshop, Corsica, June 25-29: Financial information for invited participant: ______________________________________
- Semiconductor scintillator based on photon recycling Serge Luryi n
- arXiv:submit/0389586[cond-mat.mtrl-sci]31Dec2011 Photon assisted Levy flights of minority carriers in n-InP
