- ISDRS 2007, December 12-14, 2007, College Park, MD, USA ISDRS 2007 http://www.ece.umd.edu/ISDRS
- 646 IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 9, SEPTEMBER 2004 Tri-State Logic Using Vertically Integrated
- Materials Science in Semiconductor Processing 8 (2005) 411416 Phosphorus diffusion in Si-based resonant interband tunneling
- Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts
- Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation
- Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping
- P and B doped Si resonant interband tunnel diodes with as-grown negative differential
- Record PVCR GaAs-based Tunnel Diodes Fabricated on Si Substrates using Aspect Ratio Trapping S. L. Rommel1
- Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic
- Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope
- Full band modeling of the excess current in a delta-doped silicon tunnel diode
- 1876 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 9, SEPTEMBER 2003 Diffusion Barrier Cladding in Si/SiGe Resonant
- Z .Thin Solid Films 380 2000 145 150 Epitaxial Si-based tunnel diodes
- ``p-on-n'' Si interband tunnel diode grown by molecular beam epitaxy K. D. Hobarta)
- Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy
- Optically Interconnected Static-RAM for Instruction Level Parallel Processors
- 1.3 m photoresponsivity in Si-based Ge1 xCx photodiodes Xiaoping Shao, S. L. Rommel, B. A. Orner, H. Feng, M. W. Dashiell, R. T. Troeger,
- ISDRS 2009, December 9-11, 2009, College Park, MD, USA ISDRS 2009 http://www.ece.umd.edu/ISDRS2009
- Indium Gallium Arsenide on Silicon Interband Tunnel Diodes for NDR-based memory and Steep Subthreshold Slope Transistor Applications
- ISDRS 2007, December 12-14, 2007, College Park, MD, USA ISDRS 2007 http://www.ece.umd.edu/ISDRS
- NMOS/SiGe Resonant Interband Tunneling Diode Static Random Access Memory S. Sudirgo a, D.J. Pawlik a, S.K. Kurinec a, P.E. Thompson b,
- Overgrown Si/SiGe Resonant Interband Tunnel Diodes for Integration with CMOS Stephen Sudirgo", Reinaldo Vega", Rohit P. Nandgaonkar", Karl D. Hirschman", Sean L. Rommel',
- Effect of H2 on the etch profile of InPInGaAsP alloys in Cl2 ArH2 inductively coupled plasma reactive ion etching chemistries
- Student Paper Analysis of the Biasing Conditions and Latching Operation for
- Room temperature operation of epitaxially grown Si/Si0.5Ge0.5 /Si resonant interband tunneling diodes
- IEEE ELECTRON DEVICE LETTERS, VOL. 20, NO. 7, JULY 1999 329 Epitaxially Grown Si Resonant Interband Tunnel
- We report the first monolithic vertical integration of a Si / SiGe HBT with a Si-based resonant interband tunnel diode
- ISDRS 2007, December 12-14, 2007, College Park, MD, USA ISDRS 2007 http://www.ece.umd.edu/ISDRS
- Cl2/Ar/H2-Inductively Coupled Plasma-Reactive Ion Etching of InP/InGaAsP Nanostructures
- Si-Baaed Interband Tunneling Devices For High-Speed Logic and LOWPower Memory Applications SeanL. Rornmel, Thomas E. DWon, Paul R. Berger, Roger Lakefl Phillip E, Thompson,' Karl D, Hobart? Alan C. %abaugh,"
- Student Paper High Temperature Characterization of Si/SiGe Resonant Interband Tunnel Diodes
- Electro-Refractive Low Loss MMI-Coupled Ring M.H. Kwakernaak,A.N. Lepore, H. Mohseni, H. An, Z.A. Shellenbarger,J.H. Abeles
- Dewlopment of bB/i-Si/hSb and 6B/i-Si/hSb/i-Si/&B Resonant Interband Tunnel Diodes For Integrated Circuit Applications
- TuC4.6 (Invited) 5:OO pm -5:30 pm
- Equivalent Circuit Modeling of Metal-Semiconductor-Metal Photodiodes With Transparent Conductor Electrodes
