- Surface Review and Letters, Vol. 5, Nos. 3 & 4 (1998) 783795 c World Scientific Publishing Company
- Surface Review and Letters, Vol. 5, Nos. 3 & 4 (1998) 913934 c World Scientific Publishing Company
- Step Edge Barriers vs Step Edge Relaxation in GaAs:Sn MBE
- Submitted to J. Appl. Phys., revised October, 1999 1 A Rate Equation Model for the Growth of GaN on GaN(0001) by Molecular Beam Epitaxy
- IPAP Conference Series 1: IWN2000, Nov., 2000 1 Morphology Dependent Growth Kinetics of Ga-polar GaN(0001)
- Nanostructure formation during ion assisted growth of GaN by molecular beam epitaxy Bentao Cui and P.I. Cohen
- Direct measurement of curvature dependent ion etching of GaN Bentao Cui and P.I. Cohen
- Direct Measurement of Ion Beam Induced, Nanoscale Roughening of GaN Bentao Cui and P. I. Cohen
- Reflection High-Energy Electron Diffraction from GaN Surfaces B. Benjaminsson, B. Cui, A.M. Johnston, I.P. Steinke, and P.I. Cohen
- Hexagonal Growth Spirals on GaN Grown by Molecular Beam Epitaxy: Kinetics vs Thermodynamics
- M R S Internet Journal o f Nitride Semiconductor Research Volume 1, Article 12
- PREPRINT: submitted to Appl. Phys. Lett. 1 Hexagonal Growth Spirals on GaN Grown by Molecular Beam Epitaxy: Kinetics vs
- Submitted to J. Appl. Phys. November 4, 1998; not for further distribution 1 Structure and Composition of GaN(0001) A and B Surfaces
- Controlling film growth with selective excitation: Chemical vapor deposition growth of silicon
- J. Elect. Materials, 26, 272 (1997) 1 In Situ Control of GaN Growth by Molecular Beam Epitaxy
- Submitted to J. Vac. Sci. Technol., December 11, 1998 1 Growth of Hf and HfN on GaN by Molecular Beam Epitaxy
