- First principles calculations of dopant solubility based on strain compensation and direct binding between dopants and group
- In uence Of Extended Defect Models On Prediction Of Boron Transient Enhanced Diusion
- INTERACTIONS OF POINT DEFECTS WITH BORON AND ARSENIC PRECIPITATES
- Fundamental Modeling of Transient Enhanced Diusion through Extended Defect Evolution
- Atomistic Simulations of Effect of Coulombic Interactions on Carrier Fluctuations in Doped Silicon
- J. Appl. Phys. 78,2362 (1996). Atomistic Models of VacancyMediated Diffusion in Silicon
- IMPROVED ANALYSIS OF SPREADING RESISTANCE MEASUREMENTS
- Theoretical Studies of Self-Diffusion and Dopant Clustering in Semiconductors
- List of Figure Captions Figure 1. Comparison of the density of states as a function of energy obtained ab initio to the density of
- Modeling Fermi Level Effects in Atomistic Simulations Zudian Qin and Scott T. Dunham
- Kinetics of Dopant Precipitation Scott T. Dunham
- Impact Ionization Model Using Average Energy and Average Square Energy of Distribution Function
- Moment Expansion Approach to Calculate Impact Ionization Rate in Submicron Silicon Devices
- BOSTON UNIVERSITY COLLEGE OF ENGINEERING
- MODELS AND PARAMETERS FOR THE COUPLED DIFFUSION OF DOPANTS AND POINT DEFECTS IN
- A Predictive Model for Transient Enhanced Diffusion Based on Evolution of f311g Defects
- Determination of Silicon Point Defect Properties from Oxidation Enhanced Diffusion of Buried Layers
- J. Appl. Phys. in press A Reduced MomentBased Model for Precipitation Kinetics and
- A simple continuum model for boron clustering based on atomistic calculations
- Investigation and modeling of fluorine co-implantation effects on dopant redistribution
- Accurate modeling of copper precipitation kinetics including Fermi level Hsiu-Wu Guoa
- Modeling Of Implantation Induced Transient Enhanced Diffusion Of Boron
- Oxidation of Silicon in TCA/O 2 Ambients Mitra Navi and Scott T. Dunham
- Lattice MonteCarlo Simulations of VacancyMediated Diffusion and Implications
- Point Defect Properties from Metal Diffusion Experiments ---What Does the Data Really Tell Us?
- BOSTON UNIVERSITY COLLEGE OF ENGINEERING
- BOSTON UNIVERSITY COLLEGE OF ENGINEERING
- Consistent Quantitative Model for the Spatial Extent of Point Defect Interactions in Silicon
- Accurate and Efficient Modeling of Nucleation and Growth Processes
- VOLUME 83, NUMBER 21 P HY S I CA L R E V I E W L E T T E R S 22 NOVEMBER 1999 FirstPrinciples Study of Boron Diffusion in Silicon
- Materials Synthesis and Processing Using Ion Beams, R.J. Culbertson, O.W. Holland, K.S. Jones, and K Maex, eds. (Mat. Res. Soc. Proc., Pittsburgh, PA, 1994), pp. 197-204.
- MODELING SiO 2 STRESS RELAXATION AND STRESS
- Interactions of B dopant atoms and Si interstitials with SiO2 films during annealing for ultra-shallow junction formation
- Atomistic simulations of the effect of Coulombic interactions on carrier fluctuations in doped silicon
- Consistent Quantitative Models for the Coupled Diffusion of Dopants and Point Defects in Silicon
- BOSTON UNIVERSITY COLLEGE OF ENGINEERING
- Atomistic Models of VacancyMediated Dopant Diffusion in Silicon at High Doping Levels
- BOSTON UNIVERSITY COLLEGE OF ENGINEERING
- Modeling of Boron DeactivatiodActivation Kinetics During Ion Implant Annealing
- Design and Simulation of a Hybrid Silicon/ Electro-optic Polymer Modulator
- BOSTON UNIVERSITY COLLEGE OF ENGINEERING
- Linking of Atomistic Modeling to Macroscopic Behavior for Front End Processes
- TWO STREAM MODEL FOR DOPANT DIFFUSION IN POLYSILICON INCORPORATING EFFECTS OF GRAIN
- Modeling and Simulation of Arsenic Activation and Di usion in Pavel Fastenko
- IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 12, NO. 6, NOVEMBER/DECEMBER 2006 1455 Analysis of a Compact Modulator Incorporating
- A Viscous Compressible Model for Stress Generation/Relaxation in SiO 2
- Calculations of codoping effects between combinations of donors ,,P/As/Sb... and acceptors ,,B/Ga/In... in Si
- Beyond TED: Understanding Boron Shallow Junction Formation Scott T. Dunham,y
- BOSTON UNIVERSITY GRADUATE SCHOOL OF ARTS AND SCIENCES
- Diebel and Dunham Reply: Fiorentini and Lopez [1] have identified a lower energy structure for the F4V complex
- VOLUME 83, NUMBER 21 P H Y S I C A L R E V I E W L E T T E R S 22 NOVEMBER 1999 First-Principles Study of Boron Diffusion in Silicon
- Calculations of effect of anisotropic stress/strain on dopant diffusion in silicon under equilibrium and nonequilibrium conditions
- BOSTON UNIVERSITY COLLEGE OF ENGINEERING
- A Simple Continuum Model for Simulation of Boron Interstitial Clusters based on
- Ab-initio Calculations to Model Anomalous Fluorine Behavior Milan Diebel1
- BOSTON UNIVERSITY COLLEGE OF ENGINEERING
- Modeling Of Vacancy Cluster Formation In Ion Implanted Silicon Srinivasan Chakravarthi y and Scott T. Dunham z
- SPATIAL VARIATIONS IN POINT DEFECT CONCENTRATIONS AND THEIR IMPACT ON
- Normal and TransientEnhanced Diffusion of Boron as a Function of Background Doping Level
- J. Electrochem. Soc. 142, 2823 (1995) Modeling of the Kinetics of Dopant Precipitation in Silicon
- To appear in J. Appl. Phys. 79(9) (1996). Reply to ``A Comment on `Atomistic Models of VacancyMediated
- Computationally Efficient Model for Dopant Precipitation Kinetics
- Fundamental Modeling of Transient Enhanced Diffusion through Extended Defect Evolution
- Modeling of Dislocation Loop Growth and Transient Enhanced Diffusion in Silicon for
- Calculation of dopant segregation ratios at semiconductor interfaces Chihak Ahn1 and Scott T. Dunham1,2
- Charge carrier induced lattice strain and stress effects on As activation in Si
- Dependence of resistivity on surface profile in nanoscale metal films and Baruch Feldman,1,a
- Materials Science and Engineering B 114115 (2004) 390396 Fundamental characterization of the effect of nitride sidewall spacer
- Effect of nitride sidewall spacer process on boron dose loss in ultrashallow junction formation
- A combined model for ^311 defect and dislocation loop evolution: Analytical formulation of kinetic precipitation model
- Ab-initio Calculations to Predict Stress Effects on Defects and Diffusion in Silicon
- Mat. Res. Soc. Symp. Proc. Vol. 669 2001 Materials Research Society 0 1 2 3 4 5 6 7
- Modeling of Initial Stages of Annealing for Amorphizing Arsenic Pave1Fastenko, Scott T. Dunham
- A Message About the Appearance of This Document
- Physical Modeling of Transient Enhanced Diusion and Dopant Deactivation via Extended Defect Evolution
- Interactions of Fluorine Redistribution and Nitrogen Incorporation with Boron Diffusion in Silicon Dioxide
- Transition Metal Defect Behavior and Si Density of States in the Processing Temperature Regime
- Ab Initio Calculations to Model Anomalous Fluorine Behavior Milan Diebel*
- A Compact Hybrid Silicon/Electro-Optic Polymer Resonant Cavity Modulator Design
- ACKNOWLEDGMENT I would like to express a deep gratitude to my advisor Professor Scott T. Dun
